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Sample records for dc reactive magnetron

  1. Effects of Substrate Temperature on ZAO Thin Film Prepared by DC Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Lu, F.; Zhou, X. G.; Xu, C. H.; Wen, L. S.

    The effects of substrate temperature on the resistivity and transmittance of ZAO thin films prepared by DC magnetron reactive sputtering have been investigated. The properties of the samples have been analyzed through Hall effect, X-ray diffraction and SEM. The results show that carrier concentration, Hall mobility and crystallinity of the films depend obviously on the deposition temperature. The film deposited at the range 200-250°C has lower resistivity and higher transmittance.

  2. Preparation of DC reactive magnetron sputtered ZnO thin film towards photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Prabhu, M.; Sivanantham, A.; Kannan, P. Karthick; Vishnukanthan, V.; Mayandi, J.

    2013-06-01

    Zinc oxide thin films deposited on glass and p-type silicon (100) substrates by DC reactive magnetron sputtering are reported here. The XRD investigations confirmed that the thin films deposited by this technique have hexagonal wurtzite structure. AFM results present the surface morphology and roughness of the deposited thin films. From the optical absorption spectrum, the band gap of the thin film is found to be ˜ 3.2 eV. The photoluminescence spectrum of the sample has an UV emission peak centered at 407 nm with broad visible emission in the range of 500-580 nm.

  3. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  4. Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering.

    PubMed

    Ye, Z Z; Tang, J F

    1989-07-15

    Transparent conducting ZnO films have been prepared by modified S-gun reactive dc magnetron sputtering using an indium doped Zn target. Films with a resistivity of 1.08 x 10(-3) Omega cm and average transmittance of over 80% in the visible region were obtained. The influence of indium content at the surface of Zn target on the resistivity and transmittance of ZnO films was investigated. Optical properties of ZnO films in the 0.2-2.5-microm range were modeled by the Drude theory of free electrons. The reflectance of ZnO films in the 2.5-26.0-microm region was calculated. PMID:20555606

  5. The spatial distribution of negative oxygen ion densities in a dc reactive magnetron discharge

    NASA Astrophysics Data System (ADS)

    Scribbins, Steven; Bowes, Michael; Bradley, James W.

    2013-01-01

    Using Langmuir probe-assisted eclipse laser photodetachment, the spatial distribution of O- densities in the bulk plasma of magnetron sputter tool has been determined for a range of pressures, 0.79 to 2.40 Pa. The discharge was operated in dc (200 W) with a Ti target and a fixed oxygen-argon pressure ratio of 0.2, in poisoned mode. Measurements show significant O- densities occupying an annulus downstream from the magnetic trap in regions of most positive plasma potential. With increasing pressure the region of high O- density expands and the peak densities increase reaching ˜1.5 × 1016 m-3 at 2.40 Pa, corresponding to an O- to electron density ratio (electronegativity α) of ˜2. Outside the area of dense negative ions, and in regions of the magnetic trap accessible to our probe we measure α < 0.2. The results show that these reactive magnetron plasmas, utilized for oxide film production, to be highly electronegative in regions close to the substrate.

  6. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  7. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  8. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-01

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10-4 Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  9. Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Vogl, G. W.; Monz, K. H.; Nguyen, Quang D.; Huter, Michael; Rille, Eduard P.; Pulker, Hans K.

    1994-11-01

    In this work the properties of Si3N4 and AIN thin films deposited onto unheated substrates by Reactive Low Voltage Ion Plating (RLVIP) and Reactive DC-Magnetron Sputtering (RDCMS) were investigated. In both experimental setups pure silicon and aluminum were used as starting materials. Working and reactive gas were argon and nitrogen respectively. All Si3N4 films showed amorphous structure in X-ray and electron diffraction whereas AIN films were found to be polycrystalline and could be indexed to the bulk hexagonal AIN lattice. The values of the film refractive index at 550 nm are 2.08 for RLVIP Si3N4, 2.12 for RLVIP AIN, 2.02 for RDCMS Si3N4, and 1.98 or 2.12 for AIN depending on the total pressure in the range of 8 E - 1 Pa and 1 E - 1 Pa during the process. The high optical transmission region for the Si3N4 films lies between 0.23 and 9.5 micrometers , and for AIN films between 0.2 and 12.5 micrometers . Purity and composition were measured by electron microprobe, infrared transmission, nuclear reactions, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Transmission electron micrographs of Pt-C replicas of fracture cross sections of the films show their different microstructure and surface topography. Environmental tests proved the RLVIP Si3N4 films to be very hard, of high density and of strong adherence to glass.

  10. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    PubMed

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. PMID:26478293

  11. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  12. Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

    SciTech Connect

    Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

    2012-06-25

    Thin films of VO{sub x} (1.3 {<=} x {<=} 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO{sub x} samples. The resistivity of nanotwinned VO{sub x} films ranged from 4 m{Omega}{center_dot}cm to 0.6 {Omega}{center_dot}cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VO{sub x} samples using the Hooge-Vandamme relation. These VO{sub x} films are comparable or surpass commercial VO{sub x} films deposited by ion beam sputtering.

  13. Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

    2012-06-01

    Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

  14. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    NASA Astrophysics Data System (ADS)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  15. Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

    SciTech Connect

    Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Drawl, William R.; Allara, David L.; Ashok, S.; Horn, Mark W.; Bharadwaja, S. S. N.

    2011-11-15

    Cathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was investigated to correlate the structural and electrical properties of the resultant vanadium oxide thin films within the framework of Berg's model [Berg et al., J. Vac. Sci. Technol. A 5, 202 (1987)]. The process hysteresis during reactive pulsed dc sputtering of a vanadium metal target was monitored by measuring the cathode (target) current under different total gas flow rates and oxygen-to-argon ratios for a power density of {approx}6.6.W/cm{sup 2}. Approximately 20%-25% hysteretic change in the cathode current was noticed between the metallic and oxidized states of the V-metal target. The extent of the hysteresis varied with changes in the mass flow of oxygen as predicted by Berg's model. The corresponding microstructure of the films changed from columnar to equiaxed grain structure with increased oxygen flow rates. Micro-Raman spectroscopy indicates subtle changes in the film structure as a function of processing conditions. The resistivity, temperature coefficient of resistance, and charge transport mechanism, obeying the Meyer-Neldel relation [Meyer and Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)], were correlated with the cathode current hysteric behavior.

  16. Visible light-induced photocatalytic properties of WO{sub 3} films deposited by dc reactive magnetron sputtering

    SciTech Connect

    Imai, Masahiro; Kikuchi, Maiko; Oka, Nobuto; Shigesato, Yuzo

    2012-05-15

    The authors examined the photocatalytic activity of WO{sub 3} films (thickness 500-600 nm) deposited on a fused quartz substrate heated at 350-800 deg. C by dc reactive magnetron sputtering using a W metal target under the O{sub 2} gas pressure from 1.0 to 5.0 Pa. Films deposited at 800 deg. C under 5.0 Pa have excellent crystallinity of triclinic, P1(1) structure and a large surface area, as confirmed by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Exposure of acetaldehyde (CH{sub 3}CHO) adsorbed onto the film surface to ultraviolet, visible, or standard fluorescence light induces oxidative photocatalytic decomposition indicated by a decrease in CH{sub 3}CHO concentration and generation of CO{sub 2} gas. For all three types of irradiation, concentration ratio of decreased CH{sub 3}CHO to increased CO{sub 2} is about 1:1, suggesting the possible presence of intermediates. The sputter-deposited WO{sub 3} film can be a good candidate as a visible light-responsive photocatalyst.

  17. Proton conductive tantalum oxide thin film deposited by reactive DC magnetron sputtering for all-solid-state switchable mirror

    NASA Astrophysics Data System (ADS)

    Tajima, K.; Yamada, Y.; Bao, S.; Okada, M.; Yoshimura, K.

    2008-03-01

    Our developed all-solid-state switchable mirror as a smart window is consisted in multi-layer of Mg4Ni/Pd/Ta2O5/WO3/ITO/glass and can switch reversibly from the reflective state to the transparent one. The development of high performance solid electrolyte thin film of Ta2O5 is important for fast speed switching and high durability of the device. In this work, we have investigated the electrochemical property of Ta2O5 thin film deposited by reactive DC magnetron sputtering. The effect of thickness on electrochemical and proton conductivities of Ta2O5 thin film was investigated. The Ta2O5 thin film with a thickness of 400 nm had better proton conductivity of 1.5×10-9 S/cm measured by AC impedance method. The transmittance at wavelength of 670 nm of the device with 400 nm thick Ta2O5 thin film was changed from 0.1% (reflective state) to 51% (transparent state) within 10 s by applying voltage of 5 V. The device showed high durability up to two-thousand switching cycles.

  18. Effects of Ti addiction in WO 3 thin film ammonia gas sensor prepared by dc reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hu, Ming; Yong, Cholyun; Feng, Youcai; Lv, Yuqiang; Han, Lei; Liang, Jiran; Wang, Haopeng

    2006-11-01

    WO 3 sensing films (1500 Å) were deposited using dc reactive magnetron sputtering method on alumina substrate on which patterned interdigital Pt electrodes were previously formed. The additive Ti was sputtered with different thickness (100-500 Å) onto WO 3 thin films and then the films as-deposited were annealed at 400°C in air for 3h. The crystal structure and chemical composition of the films were characterized by XRD and XPS analysis. The effect of Ti addition on sensitive properties of WO 3 thin film to the NH 3 gas was then discussed. WO 3 thin films added Ti revealed excellent sensitivity and response characteristics in the presence of low concentration of NH 3 (5-400 ppm) gas in air at 200°C operating temperature. Especially,in case 300 Å thickness of additive Ti, WO 3 thin films have a promotional effect on the response speed to NH 3 and selectivity enhanced with respect to other gases (CO, C IIH 5OH, CH 4). The influence of different substrates, including alumina, silicon and glass, on sensitivity to NH 3 gas has also been investigated.

  19. Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2013-01-01

    In the present study transparent conducting zinc aluminum oxide (ZAO) thin films were prepared by DC reactive magnetron sputtering technique. The films were deposited on glass substrates at 200 °C and annealed from 200 °C to 500 °C. XRD patterns of ZAO films shows (0 0 2) diffraction peak of hexagonal wurtzite, meaning that the films have c-axis orientation perpendicular to the substrate. Crystallite size was calculated from X-ray diffraction (XRD) spectra using the Scherrer formula. The surface morphology of the films was observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The electrical conductivity increases with increase of annealing temperature. The activation energies of conduction were obtained from an Arrhenius equation. The best characteristics of ZAO films have been obtained for the films annealed at 400 °C with an average transmittance of 88% and a minimum resistivity of 2.2 × 10-4 Ω cm. The optical band gap, optical constants, and electron concentrations of ZAO films are obtained from UV-vis-IR spectrophotometer data.

  20. Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zubkins, M.; Kalendarev, R.; Gabrusenoks, J.; Smits, K.; Kundzins, K.; Vilnis, K.; Azens, A.; Purans, J.

    2015-03-01

    Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range hopping changes to the non-thermally activated before iridium concentration reaches the 45 at.%.

  1. Photoelectrochemical properties of N/C-codoped TiO2 film electrodes prepared by reactive DC magnetron sputtering.

    PubMed

    Wu, Kee-Rong; Yeh, Chung-Wei; Hung, Chung-Hsuang; Chung, Chih-Yuan; Cheng, Li-Hsun

    2010-02-01

    This paper aims to characterize the photoelectrochemical properties of the visible-light enabling titanium dioxide (TiO2) film electrodes prepared by codoping nitrogen (N) and a presputtered carbon film (C-film) onto indium tin oxide (ITO) glass substrates using a direct current (DC) magnetron sputtering technique. To improve its photoelectrochemical properties, different amount of C-doping sources, 2 h and 4 h C-film, are chose to prepare the N/C-codoped TiO2 film electrodes. Under visible-light (420 < lambda < 610 nm) illumination, a remarkable photocurrent density of 22 microA/cm2 is obtained for the N/C-TiO2 film electrode prepared with a 4 h C-film (NC(4)-T) at an applied potential of +1.2 V versus SCE. Under ultraviolet (lambda approximately 365 nm) illumination, the NC(4)-T film electrode also exhibits the highest photocurrent density of 0.23 mA/cm2 among all samples tested. A more negative flat band potential of NC(4)-T film electrode is attributed to the synergistic effect of N/C codoping. The XRD spectrum of the NC(4)-T film electrode shows mainly the well-crystallized anatase TiO2 phase and an extremely intense (211) plane. Thus, photoelectrochemical activity of the NC(4)-T film electrode can be ascribed to the well-crystallized columnar crystals with pores at its grain boundary, open surface morphology, which are revealed by SEM and TEM images, and a more negative flat band potential. The visible-light induced activity is mostly enhanced as a result of the synergistic effects of N/C-codoping into the TiO2 crystals. A potential application to photocatalytic splitting of water for hydrogen evolution using solar light is practically possible. PMID:20352756

  2. Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VO{sub x} microbolometer thin films

    SciTech Connect

    Jin, Yao O. Ozcelik, Adem; Horn, Mark W.; Jackson, Thomas N.

    2014-11-01

    Vanadium oxide (VO{sub x}) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VO{sub x} film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO{sub x} in the resistivity range of 0.1–10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

  3. Effect Of Process Gas Mixture On Reactively DC Magnetron Sputtered (Al1_xSix)OyNz Thin Films

    NASA Astrophysics Data System (ADS)

    Bjornard, Erik

    1989-02-01

    (A1 1-x Si x )0yNz films have properties which make them desirable as durable overcoats and corrosion barriers in optical thin film structures. (Al, Si )O N films were reactively DC sputtered from Al, Si targets (x = 0.0, 0.117, 0.30) in Ar/N2/O2 atmospheres. Nitride films had sputter efficiencies three times that of the oxides and ESCA analysis of the films showed that the film composition varied non-linearly with reactive gas ratio and sputter rate, incorporating more oxygen than nitrogen for a given gas flow. This behavior is correlated with the hysteresis curves for the oxide and nitride states. Optical properties of the films were also found to vary with index dropping disproportionately to the 0/(0+N) flow ratio, but linearly with the ratio of atomic percent of 0 and N in the films. Durability properties of (A1 1_x Si x)0 NZ films were tested at several compositions. It was found that with high nitrogen context the wear resistance increased with Si content and the oxides were generally less wear resistant than the nitrides. The corrosion resistance also increased with Si content, but in this case, the oxides were generally more stable. Film stress became more compressive with 0 and Si content. Analysis of ESCA binding energy data indicates that the Si forms alumino-silicate bonds in the film, which apparently contributes to the durability properties.

  4. On the phase formation of titanium oxide thin films deposited by reactive DC magnetron sputtering: influence of oxygen partial pressure and nitrogen doping

    NASA Astrophysics Data System (ADS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Rajagopalan, S.; Kamruddin, M.; Tyagi, A. K.

    2014-09-01

    This work describes about the control on phase formation in titanium oxide thin films deposited by reactive dc magnetron sputtering. Various phases of titanium oxide thin films were deposited by controlling the oxygen partial pressure during the sputtering process. By adding nitrogen gas to sputter gas mixture of oxygen and argon, the oxygen partial pressure was decreased further below the usual critical value, below and above which the sputtering yields metallic and oxide films, respectively. Furthermore, nitrogen addition eliminated the typical hysteretic behaviour between the flow rate and oxygen partial pressure, and significantly influenced the sputter rate. On increasing the oxygen partial pressure, the ratio between anatase and rutile fraction and grain size increases. The fracture cross-sectional scanning electron microscopy together with the complementary information from X-ray diffraction and micro-Raman investigations revealed the evolution and spatial distribution of the anatase and rutile phases. Both the energy delivered to the growing film and oxygen vacancy concentrations are correlated with the formation of various phases upon varying the oxygen partial pressure.

  5. Effect of annealing treatment on the photocatalytic activity of TiO2 thin films deposited by dc reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Arias, L. M. Franco; Arias Duran, A.; Cardona, D.; Camps, E.; Gómez, M. E.; Zambrano, G.

    2015-07-01

    Titanium dioxide (TiO2) thin films have been deposited by DC reactive magnetron sputtering on silicon and quartz substrates with different Ar/O2 ratios in the gas mixture. Substrate temperature was kept constant at 400 °C during the deposition process, and the TiO2 thin films were later annealed at 700 °C for 3 h. The effect of the Ar/O2 ratio in the gas flow and the annealing treatment on the phase composition, deposition rate, crystallinity, surface morphology and the resulting photocatalytic properties were investigated. For photocatalytic measurements, the variation of the concentration of the methylene blue (MB) dye under UV irradiation was followed by a change in the intensity of the characteristic MB band in the UV- Vis transmittance spectra. We report here that the as-grown TiO2 films showed only the anatase phase, whereas after annealing, the samples exhibited both the anatase and rutile phases in proportions that varied with the Ar/O2 ratio in the mixture of gases used during growth. In particular, the annealed TiO2 thin film deposited at a 50/50 ratio of Ar/O2, composed of both anatase (80%) and rutile phases (20%), exhibited the highest photocatalytic activity (30% of MB degradation) compared with the samples without annealing and composed of only the anatase phase.

  6. Characterization of thin MoO3 films formed by RF and DC-magnetron reactive sputtering for gas sensor applications

    NASA Astrophysics Data System (ADS)

    Yordanov, R.; Boyadjiev, S.; Georgieva, V.; Vergov, L.

    2014-05-01

    The present work discusses a technology for deposition and characterization of thin molybdenum oxide (MoOx, MoO3) films studied for gas sensor applications. The samples were produced by reactive radio-frequency (RF) and direct current (DC) magnetron sputtering. The composition and microstructure of the films were studied by XPS, XRD and Raman spectroscopy, the morphology, using high resolution SEM. The research was focused on the sensing properties of the sputtered thin MoO3 films. Highly sensitive gas sensors were implemented by depositing films of various thicknesses on quartz resonators. Making use of the quartz crystal microbalance (QCM) method, these sensors were capable of detecting changes in the molecular range. Prototype QCM structures with thin MoO3 films were tested for sensitivity to NH3 and NO2. Even in as-deposited state and without heating the substrates, these films showed good sensitivity. Moreover, no additional thermal treatment is necessary, which makes the production of such QCM gas sensors simple and cost-effective, as it is fully compatible with the technology for producing the initial resonator. The films are sensitive at room temperature and can register concentrations as low as 50 ppm. The sorption is fully reversible, the films are stable and capable of long-term measurements.

  7. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  8. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prakash, Ravi; Kaur, Davinder

    2016-05-01

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  9. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N films deposited by DC reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Fernandes, F.; Loureiro, A.; Polcar, T.; Cavaleiro, A.

    2014-01-01

    In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N coatings deposited by DC reactive magnetron sputtering. The results achieved for TiSiVN films were compared and discussed in relation to TiN and TiSiN films prepared as reference. All coatings presented a fcc NaCl-type structure. A shift of the diffraction peaks to higher angles with increasing Si and V contents suggested the formation of a substitutional solid solution in TiN phase. Hardness and Young's modulus of the coatings were similar regardless on V content. The onset of oxidation of the films decreased significantly to 500 °C when V was added into the films; this behaviour was independent of the Si and V contents. The thermogravimetric isothermal curves of TiSiVN coatings oxidized at temperatures below the melting point of α-V2O5 (∼685 °C) showed two stages: at an early stage, the weight increase over time is linear, whilst, in the second stage, a parabolic evolution can be fitted to the experimental data. At higher temperatures only a parabolic evolution was fitted. α-V2O5 was the main phase detected at the oxidized surface of the coatings. Reduction of α-V2O5 to β-V2O5 phase occurred for temperatures above its melting point.

  10. Relationship between the physical and structural properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering

    SciTech Connect

    Sanjines, R.; Benkahoul, M.; Sandu, C.S.; Schmid, P.E.; Levy, F.

    2005-12-15

    The optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering have been investigated as a function of the Si content (C{sub Si}). Optical properties were studied by both specular reflectivity and spectroscopic ellipsometry. Electrical resistivity was measured by the van der Pauw method at room temperature and as a function of the temperature down to 10 K. Both the optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} films are closely related with the chemical composition and microstructure evolution caused by Si addition. For C{sub Si} up to 4 at. % the Si atoms are soluble in the lattice of the NbN crystallites. In this compositional regime, the optical and electrical properties show little dependence on the Si content. Between 4 and 7 at. % the surplus of Si atoms segregates at the grain boundaries, builds an insulating SiN{sub x} layer, and originates important modifications in the optical and electrical properties of these films. Further increase of C{sub Si} leads to the formation of nanocomposite structures. The electrical properties of these films are well described by the grain-boundary scattering model with low probability for electrons to cross the grain boundary. The appearance of the intragranular-insulating SiN{sub x} layer and the reduction of the grain size are noticed in the dielectric function mainly as a strong damping of the plasma oscillation.

  11. Analysis of DC magnetron sputtered beryllium films

    SciTech Connect

    Price, C.W.; Hsieh, E.J.; Lindsey, E.F.; Pierce, E.L.; Norberg, J.C.

    1988-10-01

    We are evaluating techniques that alter the columnar grain structure in sputtered beryllium films on fused silica substrates. The films are formed by DC magnetron sputtering, and the columnar structure, which is characteristic of this and most other deposition techniques, is highly detrimental to the tensile strength of the films. Attempts to modify the columnar structure by using RF-biased sputtering combined with nitrogen pulsing have been successful, and this paper describes the analyses of these films. Sputtered beryllium films are quite brittle, and the columnar structure in particular tends to form a distinct intergranular fracture; therefore, the grain structure was analyzed in fractured specimens using the high-resolution capability of a scanning electron microscope (SEM) equipped with a field emission gun (FESEM). Ion microanalysis using secondary-ion mass spectroscopy (SIMS) was conducted on some specimens to determining relative contamination levels introduced by nitrogen pulsing. The capability to perform quantitative SIMS analyses using ion-implanted specimens as standards also is being developed. This work confirms that the structure of DC magnetron sputtered beryllium can be improved significantly with combined nitrogen pulsing and RF-biased sputtering. 8 refs.

  12. Lateral variation of target poisoning during reactive magnetron sputtering

    SciTech Connect

    Guettler, D.; Groetzschel, R.; Moeller, W.

    2007-06-25

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar/N{sub 2} atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  13. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  14. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  15. Stress evolution during growth of GaN (0001)/Al2O3(0001) by reactive dc magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Junaid, M.; Sandström, P.; Palisaitis, J.; Darakchieva, V.; Hsiao, C.-L.; Persson, P. O. Å.; Hultman, L.; Birch, J.

    2014-04-01

    We study the real time stress evolution, by in situ curvature measurements, during magnetron sputter epitaxy of GaN (0 0 0 1) epilayers at different growth temperatures, directly on Al2O3(0 0 0 1) substrates. The epilayers are grown by sputtering from a liquid Ga target in a mixed N2/Ar discharge. For 600 °C, a tensile biaxial stress evolution is observed, while for 700 °C and 800 °C, compressive stress evolutions are observed. Structural characterization by cross-sectional transmission electron microscopy, and atomic force microscopy, revealed that films grew at 700 °C and 800 °C in a layer-by-layer mode while a growth temperature of 600 °C led to an island growth mode. High resolution x-ray diffraction data showed that edge and screw threading dislocation densities decreased with increasing growth temperature, with a total density of 5.5 × 1010 cm-2 at 800 °C. The observed stress evolution and growth modes are explained by a high surface mobility during magnetron sputter epitaxy at 700-800 °C. Other possible reasons for the different stress evolutions are also discussed.

  16. Electrochromism of DC magnetron-sputtered TiO2: Role of film thickness

    NASA Astrophysics Data System (ADS)

    Sorar, Idris; Pehlivan, Esat; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-11-01

    Titanium dioxide films were prepared by reactive DC magnetron sputtering and the role of the film thickness d on the electrochromism was analyzed for 100 < d < 400 nm. The best properties were obtained for the thickest films, which yielded a mid-luminous transmittance modulation of 58% and a corresponding coloration efficiency of 26.3 cm2/C. The films were amorphous according to X-ray diffraction measurements and showed traces of adsorbed water as revealed by infrared spectroscopy.

  17. Hysteresis behavior during reactive magnetron sputtering of Al{sub 2}O{sub 3} using a rotating cylindrical magnetron

    SciTech Connect

    Depla, D.; Haemers, J.; Buyle, G.; Gryse, R. de

    2006-07-15

    Rotating cylindrical magnetrons are used intensively on industrial scale. A rotating cylindrical magnetron on laboratory scale makes it possible to study this deposition technique in detail and under well controlled conditions. Therefore, a small scale rotating cylindrical magnetron was designed and used to study the influence of the rotation speed on the hysteresis behavior during reactive magnetron sputtering of aluminum in Ar/O{sub 2} in dc mode. This study reveals that the hysteresis shifts towards lower oxygen flows when the rotation speed of the target is increased, i.e., target poisoning occurs more readily when the rotation speed is increased. The shift is more pronounced for the lower branch of the hysteresis loop than for the upper branch of the hysteresis. This behavior can be understood qualitatively. The results also show that the oxidation mechanism inside the race track is different from the oxidation mechanism outside the race track. Indeed, outside the race track the oxidation mechanism is only defined by chemisorption while inside the race track reactive ion implantation will also influence the oxidation mechanism.

  18. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  19. Rotating cylindrical magnetron sputtering: Simulation of the reactive process

    SciTech Connect

    Depla, D.; Mahieu, S.; Van Aeken, K.; Leroy, W. P.; Haemers, J.; De Gryse, R.; Li, X. Y.; Bogaerts, A.

    2010-06-15

    A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

  20. The target heating influence on the reactive magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Bondarenko, A.; Kolomiytsev, A.; Shapovalov, V.

    2016-07-01

    A physicochemical model for the reactive magnetron sputtering of a “hot” target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  1. Continuous and nanostructured TiO2 films grown by dc sputtering magnetron.

    PubMed

    Sánchez, O; Vergara, L; Font, A Climent; de Melo, O; Sanz, R; Hernández-Vélez, M

    2012-12-01

    The growth of Anatase nanostructured films using dc reactive magnetron sputtering and post-annealing treatment is reported. TiO2 has been deposited on Porous Anodic Alumina Films used as templates which were previously grown in phosphoric acid solution and etched to modify their pore diameters. This synthesis via results in the formation of vertically aligned and spatially ordered TiO2 nanostructures replicating the underlying template. Previously, the growth optimization of TiO2 thin films deposited by dc magnetron sputtering on flat silicon substrates was done. The crystalline structure and Ti in-depth concentration profile were determined by grazing incidence X-ray diffraction and Rutherford backscattering spectrometry, respectively. The surface morphology of the samples was explored by mean of a Field Emission Gun scanning electron microscope. Optical properties of the nanostructured samples were studied by using the reflectance spectra received in the UV-visible range. In these spectra different band gap values and complex light absorption features were observed. PMID:23447970

  2. Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering

    SciTech Connect

    Yoshimura, Kazuki; Miki, Takeshi; Tanemura, Sakae

    1997-09-01

    Niobium oxide electrochromic thin films were prepared by reactive DC magnetron sputtering and their electrochromic properties for Li intercalation and durability were studied. Chronoamperometric analyses revealed that the extended space-charge limited model by Zhang et al. is applicable to Nb{sub 2}O{sub 5} films. Crystallized Nb{sub 2}O{sub 5} films showed excellent electrochromism and stability over many coloration-bleaching cycles. The best performance was obtained for films with a substrate temperature of 500 C and an oxygen flow rate of 10 sccm. Electrochromic materials enable dynamic control of the throughput of radiant energy, and play a significant role in energy-efficient smart windows in order to reduce the cooling and lighting costs of buildings.

  3. Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

    SciTech Connect

    Junaid, M.; Hsiao, C.-L.; Palisaitis, J.; Jensen, J.; Persson, P. O. A.; Hultman, L.; Birch, J.

    2011-04-04

    Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

  4. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  5. Study on the influence of nitrogen on titanium nitride in a dc post magnetron sputtering plasma system

    NASA Astrophysics Data System (ADS)

    Moni Borah, Sankar; Bailung, Heremba; Ratan Pal, Arup; Chutia, Joyanti

    2008-10-01

    The characteristics of direct current (dc) glow discharge plasma have been studied in a post magnetron device with an argon and nitrogen gas mixture. The introduction of nitrogen modifies the discharge leading to modifications of plasma parameters, transport mechanism and the cathode sheath. The electron energy distribution function, density and temperature profile are measured to characterize the discharge. Measured plasma potential profiles show the modification of the structure of the cathode sheath and confinement space variation. Optical emission spectroscopy is used to identify prominent transitions of the different species in the discharge. The discharge mode in argon undergoes a transition from metallic mode to reactive mode when nitrogen concentration exceeds argon.

  6. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-01

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al2O3, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  7. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    SciTech Connect

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-28

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  8. Raman spectroscopy of copper oxide films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Levitskii, V. S.; Shapovalov, V. I.; Komlev, A. E.; Zav'yalov, A. V.; Vit'ko, V. V.; Komlev, A. A.; Shutova, E. S.

    2015-11-01

    Raman spectroscopy has been used to study the influence of partial oxygen pressure during deposition and isothermal treatment on the chemical composition of copper oxide films deposited by reactive dc magnetron sputtering of copper target in a reactive gaseous medium. Three series of films deposited at various partial oxygen pressures (from 0.06 to 0.16 mTorr) possessed different chemical compositions. The subsequent thermal treatment of all samples was performed for 30 min in air at a constant temperature in a 300?500°C interval. An increase in the annealing temperature led to chemical changes in the films. After isothermal treatment at 450°C, the films in all series acquired stoichiometric CuO composition.

  9. A bulk plasma model for dc and HiPIMS magnetrons

    NASA Astrophysics Data System (ADS)

    Brenning, N.; Axnäs, I.; Raadu, M. A.; Lundin, D.; Helmerson, U.

    2008-11-01

    A plasma discharge model has been developed for the bulk plasma (also called the extended presheath) in sputtering magnetrons. It can be used both for high power impulse magnetron sputtering (HiPIMS) and conventional dc sputtering magnetrons. Demonstration calculations are made for the parameters of the HiPIMS sputtering magnetron at Linköping University, and also benchmarked against results in the literature on dc magnetrons. New insight is obtained regarding the structure and time development of the currents, the electric fields and the potential profiles. The transverse resistivity ηbottom has been identified as having fundamental importance both for the potential profiles and for the motion of ionized target material through the bulk plasma. New findings are that in the HiPIMS mode, as a consequence of a high value of ηbottom, (1) there can be an electric field reversal that in our case extends 0.01-0.04 m from the target, (2) the electric field in the bulk plasma is typically an order of magnitude weaker than in dc magnetrons, (3) in the region of electric field reversal the azimuthal current is diamagnetic in nature, i.e. mainly driven by the electron pressure gradient, and actually somewhat reduced by the electron Hall current which here has a reversed direction and (4) the azimuthal current above the racetrack can, through resistive friction, significantly influence the motion of the ionized fraction of the sputtered material and deflect it sideways, away from the target and towards the walls of the magnetron.

  10. Investigating the effect of Argon Pressure on DC and High Power Magnetron Plasmas

    NASA Astrophysics Data System (ADS)

    Bernales, Baysha; Bolat, Rustem; Anders, Andre; Slack, Jonathan; PAG Team; EETD Team

    2013-10-01

    Smart Glass is fabricated by depositing thin films of specialized material onto a transparent substrate. When a potential is applied across the surface of the Smart Glass, it changes its optical properties. Direct Current Magnetron Sputtering (DCMS) and High Power Impulse Magnetron Sputtering (HiPIMS) are two methods of PVD that are used to fabricate this material. In previous research, it has been noted that magnetron plasmas have localized ionization zones that rotate clockwise in DCMS and counterclockwise in HiPIMS. Not much is known about what causes the change in rotation. This research seeks to investigate what occurs during the first moments of plasma evolution. Both DC and high power magnetron plasmas were observed as Argon pressure was varied. It was found that pressure had a very pronounced effect on the floating-point potential signal that was received from the probes placed in the plasma. It was found that when a high-pressure jet of Argon was injected into the system, that the rotation pattern of the DC magnetron plasma was disrupted. It was also found that at certain pressures, the voltage signal was less indicative of azimuthal rotation and more indicative of z-direction breathing modes.

  11. Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering

    SciTech Connect

    Rahamathunnisa, M.; Cameron, D. C.

    2009-03-15

    The ion fluxes and energies which impinge on the substrate during the deposition of chromium nitride by asymmetric bipolar pulsed dc reactive magnetron sputtering have been analyzed using energy resolved mass spectrometry. It has been found that there is a remarkable increase in ion flux at higher pulse frequencies and that the peak ion energy is directly related to the positive voltage overshoot of the target voltage. The magnitude of the metal flux depositing on the substrate is consistent with a 'dead time' of {approx}0.7 {mu}s at the start of the on period. The variation of the ion flux with pulse frequency has been explained by a simple model in which the ion density during the on period has a large peak which is slightly delayed from the large negative voltage overshoot which occurs at the start of the on pulse due to increased ionization at that time. This is consistent with the previously observed phenomena in pulsed sputtering.

  12. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ruden, A.; Restrepo-Parra, E.; Paladines, A. U.; Sequeda, F.

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N2-Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (Rp). The results indicated that the CrN coatings present better corrosion resistance and Rp values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  13. Highly conducting ZnSe films by reactive magnetron sputtering

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.

    1986-01-01

    This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

  14. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  15. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G. H.

    2015-09-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C) temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  16. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  17. Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

    NASA Astrophysics Data System (ADS)

    Petrantoni, M.; Rossi, C.; Salvagnac, L.; Conédéra, V.; Estève, A.; Tenailleau, C.; Alphonse, P.; Chabal, Y. J.

    2010-10-01

    Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon-oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (<50 MPa) multilayered nanoenergetic material, each layer being in the range of tens nanometer to one micron. The reaction temperature and heat of reaction were measured using differential scanning calorimetry and thermal analysis to compare nanostructured layered materials to microstructured materials. For the nanostructured multilayers, all the energy is released before the Al melting point. In the case of the microstructured samples at least 2/3 of the energy is released at higher temperatures, between 1036 and 1356 K.

  18. Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

    NASA Technical Reports Server (NTRS)

    Kusano, E.; Theil, J. A.; Thornton, John A.

    1988-01-01

    It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

  19. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-05-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  20. Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

    2016-08-01

    A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm-2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

  1. Fine control of the amount of preferential <001> orientation in DC magnetron sputtered nanocrystalline TiO2 films

    NASA Astrophysics Data System (ADS)

    Stefanov, B.; Granqvist, C. G.; Österlund, L.

    2014-11-01

    Different crystal facets of anatase TiO2 are known to have different chemical reactivity; in particular the {001} facets which truncates the bi-tetrahedral anatase morphology are reported to be more reactive than the usually dominant {101} facets. Anatase TiO2 thin films were deposited by reactive DC magnetron sputtering in Ar/O2 atmosphere and were characterized using Rietveld refined grazing incidence X-ray diffraction, atomic force microscopy and UV/Vis spectroscopy. By varying the partial O2 pressure in the deposition chamber, the degree of orientation of the grains in the film could be systematically varied with preferred <001> orientation changing from random upto 39% as determined by March-Dollase method. The orientation of the films is shown to correlate with their reactivity, as measured by photo-degradation of methylene blue in water solutions. The results have implications for fabrication of purposefully chemically reactive thin TiO2 films prepared by sputtering methods.

  2. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NASA Astrophysics Data System (ADS)

    van Hattum, E. D.

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, where the SiOx layer is used as the charge retention layer on the drums for copying and printing devices. The thesis describes investigations of the plasma and of processes taking place on the sputter target and on the SiOx growth surface in the room temperature, RF reactive magnetron plasma sputter deposition technology. The sputtering target consists of silicon and the reactive atmosphere consists of an Ar/O2 mixture. The composition of the grown SiOx layers has been varied between x=0 and x=2 by variation of the O2 partial pressure. The characteristics of the growth process have been related to the nanostructural properties of the grown films. The deposition system enables the characterisation of the plasma (Langmuir probe, energy resolved mass spectrometer) and of the growing film (Elastic Recoil Detection (ERD), Fourier transform infrared absorption spectroscopy) and is connected to a beamline of a 6MV tandem van de Graaff accelerator. Also Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy have been applied. It is shown how ERD can be used as a real-time in-situ technique. The thesis presents spatially resolved values of the ion density, electron temperature and the quasi-electrostatic potential, determined using a Langmuir probe. The plasma potential has a maximum about 2 cm from the cathode erosion area, and decreases (more than 200 V typically) towards the floating sputter cathode. The potential decreases slightly in the direction towards the grounded growth surface and the positive, mainly Ar+, ions created in the large volume of the plasma closest to the substrate are accelerated towards the growth surface. These ions obtain a few eV of

  3. Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gupta, Rachana; Pandey, Nidhi; Behera, Layanta; Gupta, Mukul

    2016-05-01

    In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N2 gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L2,3 and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films. In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.

  4. Aluminium nitride piezoelectric thin films reactively deposited in closed field unbalanced magnetron sputtering for elevated temperature 'smart' tribological applications

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood

    "Smart" high temperature piezoelectric aluminum nitride (AlN) thin films were synthesized by reactive magnetron sputtering using DC; pulsed-DC, and deep oscillation modulated pulsed power (DOMPP) systems on variety of substrate materials. Process optimization was performed to obtain highly c-axis texture films with improved piezoelectric response via studying the interplay between process parameters, microstructure and properties. AlN thin films were sputtered with DC and pulsed-DC systems to investigate the effect of various deposition parameters such as reactive gas ratio, working pressure, target power, pulsing frequency, substrate bias, substrate heating and seed layers on the properties and performance of the film device. The c-axis texture, orientation, microstructure, and chemical composition of AlN films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. Thin films with narrow AlN-(002) rocking curve of 2.5° were obtained with preliminary studies of DOMPP reactive sputtering. In-situ high temperature XRD showed excellent thermal stability and oxidation resistance of AlN films up to 1000 °C. AlN films with optimized processing parameters yielded an inverse piezoelectric coefficient, d33 of 4.9 pm/V close to 90 percent of its theoretical value.

  5. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride - Technology and piezoelectric properties

    NASA Astrophysics Data System (ADS)

    Stoeckel, C.; Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-01

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d31 is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d33.

  6. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    SciTech Connect

    Stoeckel, C. Kaufmann, C.; Hahn, R.; Schulze, R.; Billep, D.; Gessner, T.

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  7. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  8. Thin film transistor based on TiOx prepared by DC magnetron sputtering.

    PubMed

    Chung, Sung Mook; Shin, Jae-Heon; Hong, Chan-Hwa; Cheong, Woo-Seok

    2012-07-01

    This paper reports on the thin film transistor (TFT) based on TiOx prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic TiOx target was prepared for the sputtering of the TiO2 films. The structural, optical, and electrical properties of the TiO2 films were investigated after their heat treatment. It is observed from XRD measurement that the TiO2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure TiO2 films show a band-gap energy of approximately 3.20 eV and a transmittance of approximately 91% (@550 nm). The bottom-gate TFTs fabricated with the TiO2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 10(4), 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying TiO2 films depositied by DC magnetron sputtering to TiO2-based opto-electronic devices. PMID:22966586

  9. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction.

    PubMed

    Bürgi, J; Neuenschwander, R; Kellermann, G; García Molleja, J; Craievich, A F; Feugeas, J

    2013-01-01

    The purpose of the designed reactor is (i) to obtain polycrystalline and∕or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer. PMID:23387690

  10. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction

    SciTech Connect

    Buergi, J.; Molleja, J. Garcia; Feugeas, J.; Neuenschwander, R.; Kellermann, G.; Craievich, A. F.

    2013-01-15

    The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, {theta}-2{theta} scanning, fixed {alpha}-2{theta} scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.

  11. Study of hysteresis behavior in reactive sputtering of cylindrical magnetron plasma

    NASA Astrophysics Data System (ADS)

    Kakati, H.; M. Borah, S.

    2015-12-01

    In order to make sufficient use of reactive cylindrical magnetron plasma for depositing compound thin films, it is necessary to characterize the hysteresis behavior of the discharge. Cylindrical magnetron plasmas with different targets namely titanium and aluminium are studied in an argon/oxygen and an argon/nitrogen gas environment respectively. The aluminium and titanium emission lines are observed at different flows of reactive gases. The emission intensity is found to decrease with the increase of the reactive gas flow rate. The hysteresis behavior of reactive cylindrical magnetron plasma is studied by determining the variation of discharge voltage with increasing and then reducing the flow rate of reactive gas, while keeping the discharge current constant at 100 mA. Distinct hysteresis is found to be formed for the aluminium target and reactive gas oxygen. For aluminium/nitrogen, titanium/oxygen and titanium/nitrogen, there is also an indication of the formation of hysteresis; however, the characteristics of variation from metallic to reactive mode are different in different cases. The hysteresis behaviors are different for aluminium and titanium targets with the oxygen and nitrogen reactive gases, signifying the difference in reactivity between them. The effects of the argon flow rate and magnetic field on the hysteresis are studied and explained. Project supported by the Department of Science and Technology, Government of India and Council of Scientific and Industrial Research, India.

  12. Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

    SciTech Connect

    Welzel, Thomas; Ellmer, Klaus

    2012-11-15

    Reactive d.c. magnetron sputtering in Ar/O{sub 2} gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O{sup -}, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O{sup -}, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O{sup -} formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

  13. Physical Properties of Silver Oxide Thin Film Prepared by DC Magnetron Sputtering: Effect of Oxygen Partial Pressure During Growth

    NASA Astrophysics Data System (ADS)

    Entezar Mehdi, Hamid; Hantehzadeh, M. R.; Valedbagi, Sh.

    2013-02-01

    In this paper the physical properties of silver oxide thin film have been prepared on BK7 substrate at room temperature by reactive DC magnetron sputtering technique using pure silver metal target by varying oxygen partial pressure during growth at reported. The reactive sputter gas was a mixture of Ar (99.999%) and N2 (99.999%) with the different ratio Ar and N2 by volume at the constant pressure of the growth chamber. The X-ray diffraction measurements showed that by increasing O2 volume during the Growth, change in crystalline structure will occur. The Atomic Force Microscope images shown by increasing O2 volume, the RMS roughness decreasing consistently. The thickness of the thin films decreases (from 353 to 230 nm) with increasing oxygen partial pressure in chamber. The reflectivity of thin films was investigated with a spectrophotometer system, and the surface reflectivity measurements indicate that by increasing O2 volume growth, the optical properties of the films changes.

  14. Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5

    NASA Astrophysics Data System (ADS)

    Hollerweger, R.; Holec, D.; Paulitsch, J.; Rachbauer, R.; Polcik, P.; Mayrhofer, P. H.

    2013-08-01

    Reactive magnetron sputtering enables the deposition of various thin films to be used for protective as well as optical and electronic applications. However, progressing target erosion during sputtering results in increased magnetic field strengths at the target surface. Consequently, the glow discharge, the target poisoning, and hence the morphology, crystal structure and stoichiometry of the prepared thin films are influenced. Therefore, these effects were investigated by varying the cathode current Im between 0.50 and 1.00 A, the magnetic field strength B between 45 and 90 mT, and the O2/(Ar + O2) flow rate ratio Γ between 0% and 100%. With increasing oxygen flow ratio a substoichiometric TaOx oxide forms at the metallic Ta target surface which further transfers to a non-conductive tantalum pentoxide Ta2O5, impeding a stable dc glow discharge. These two transition zones (from Ta to TaOx and from TaOx to Ta2O5) shift to higher oxygen flow rates for increasing target currents. In contrast, increasing the magnetic field strength (e.g., due to sputter erosion) mainly shifts the TaOx to Ta2O5 transition to lower oxygen flow rates while marginally influencing the Ta to TaOx transition. To allow for a stable dc glow discharge (and to suppress the formation of non-conductive Ta2O5 at the target) even at Γ = 100% either a high target current (Im ⩾ 1 A) or a low magnetic field strength (B ⩽ 60 mT) is necessary. These conditions are required to prepare stoichiometric and fully crystalline Ta2O5 films.

  15. Structural and nanomechanical characterization of niobium films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, X.; Cao, W. H.; Tao, X. F.; Ren, L. L.; Zhou, L. Q.; Xu, G. F.

    2016-05-01

    Nb thin films were deposited onto Si wafers by direct current (DC) magnetron sputtering at different deposition pressures. The microstructure and nanomechanical properties of Nb films were investigated by scanning electron microscope, X-ray diffractometer, transmission electron microscope, atomic force microscope and nanoindenter. The results revealed that the grain size, thickness, surface roughness, the reduced elastic modulus ( Er) and hardness ( H) values of Nb thin films increased at the pressure range of 0.61-0.68 Pa. Meanwhile, the porosity of Nb films decreased with the increase in deposition pressure. The lattice deformation of Nb thin films changed from negative to positive with the increase in deposition pressure. It is concluded that deposition pressure influences the microstructure and nanomechanical properties of Nb films.

  16. Synthesis and characterization of DC magnetron sputtered nano structured molybdenum thin films

    NASA Astrophysics Data System (ADS)

    Rondiya, S. R.; Rokade, A. V.; Jadhavar, A. A.; Pandharkar, S. M.; Kulkarni, R. R.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

    2016-04-01

    Molybdenum (Mo) thin films were deposited on corning glass (#7059) substrates using DC magnetron sputtering system. The effect of substrate temperature on the structural, morphology and topological properties have been investigated. Films were characterized by variety of techniques such as low angle x-ray diffraction (low angle XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). The low angle XRD analysis revealed that the synthesized Mo films are nanocrystalline having cubic crystal structure with (110) preferential orientation. The microstructure of the deposited Mo thin films observed with FE-SEM images indicated that films are homogeneous and uniform with randomly oriented leaf shape morphology. The AFM analysis shows that with increase in substrate temperature the rms roughness of Mo films increases. The obtained results suggest that the synthesized nanostructured Mo thin films have potential application as a back contact material for high efficiency solar cells like CdTe, CIGS, CZTS etc.

  17. Monte Carlo simulation of the transport of atoms in DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mahieu, S.; Buyle, G.; Depla, D.; Heirwegh, S.; Ghekiere, P.; De Gryse, R.

    2006-02-01

    In this work, we present a Monte Carlo simulation for the transport of sputtered particles during DC magnetron sputter deposition through the gas phase. The nascent sputter flux has been simulated by SRIM and TRIM, while the collisions of the sputtered atoms with the sputter gas are simulated with a screened Coulomb potential, with the Molière screening function and the Firsov screening length. The model calculates the flux of the atoms arriving at the substrate, their energy, direction and number of collisions they underwent. The model was verified by comparing the simulated thickness profiles with experimental profiles of deposited layers of Al, Cu and Zr/Y (85/15 wt%) on large substrates (ratio of the substrate diameter to the target diameter is 8). A good agreement between the experimental data and the simulations for sputter pressures (0.3-1 Pa) and target-substrate distances (7-16 cm) is obtained.

  18. Effect of process conditions on the microstructural formation of dc reactively sputter deposited AlN

    SciTech Connect

    Ekpe, Samuel D.; Jimenez, Francisco J.; Dew, Steven K.

    2010-09-15

    Thin film aluminum nitride (AlN), because of its attractive properties, is a material with many applications. Its microstructure and hence properties are greatly influenced by the deposition process conditions. In this work, AlN was reactively deposited in a dc magnetron sputtering system at different proportions of nitrogen in the process gas mixture and at different process conditions. The microstructure and composition of the films were analyzed using x-ray diffraction data, energy dispersive spectroscopy, and scanning electron microscopy. Results show that for a process gas pressure of 0.67 Pa, a magnetron power of 100 W, and a substrate-target distance of 10 cm, a near stoichiometeric AlN can be prepared at nitrogen proportions as low as 20%. At these process conditions, (002) was the preferred crystal orientation. Dense fibrous structures were obtained, especially at low deposition rates with high proportions of nitrogen. Increase in magnetron power and decrease in distance result in a more porous structure. High kinetic energies (average) of the sputtered Al particles and high deposition rates tend to favor AlN(101) formation, while low kinetic energies of the Al particles and low deposition rates generally favor more of the AlN(100) formation.

  19. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Aji, A. S.; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y.

    2015-04-01

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  20. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    SciTech Connect

    Aji, A. S. Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y.

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  1. Zr-ZrO2 cermet solar coatings designed by modelling calculations and deposited by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu; Hadavi, M. S.; Lee, K.-D.; Shen, Y. G.

    2003-03-01

    High solar performance Zr-ZrO2 cermet solar coatings were designed using a numerical computer model and deposited experimentally. The layer thickness and Zr metal volume fraction for the Zr-ZrO2 cermet solar selective coatings on a Zr or Al reflector with a surface ZrO2 or Al2O3 anti-reflection layer were optimized to achieve maximum photo-thermal conversion efficiency at 80°C under concentration factors of 1-20 using the downhill simplex method in multi-dimensions in the numerical calculation. The dielectric function and the complex refractive index of Zr-ZrO2 cermet materials were calculated using Sheng's approximation. Optimization calculations show that Al2O3/Zr-ZrO2/Al solar coatings with two cermet layers and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimized Al2O3/Zr-ZrO2/Al solar coating film with two cermet layers has a high solar absorptance value of 0.97 and low hemispherical emittance value of 0.05 at 80°C for a concentration factor of 2. The Al2O3/Zr-ZrO2/Al solar selective coatings with two cermet layers were deposited using dc magnetron sputtering technology. During the deposition of Zr-ZrO2 cermet layer, a Zr metallic target was run in a gas mixture of argon and oxygen. By control of oxygen flow rate the different metal volume fractions in the cermet layers were achieved using dc reactive sputtering. A solar absorptance of 0.96 and normal emittance of 0.05 at 80°C were achieved.

  2. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  3. Effect of magnetic field strength on deposition rate and energy flux in a dc magnetron sputtering system

    SciTech Connect

    Ekpe, Samuel D.; Jimenez, Francisco J.; Field, David J.; Davis, Martin J.; Dew, Steven K.

    2009-11-15

    Variations in the magnetic field strongly affect the plasma parameters in a magnetron sputtering system. This in turn affects the throughput as well as the energy flux to the substrate. The variation in the magnetic field in this study, for a dc magnetron process, is achieved by shifting the magnet assembly slightly away from the target. Measurements of the plasma parameters show that while the electron density at the substrate increases with decrease in magnetic field, the electron temperature decreases. The cooling of the electron temperature is consistent with results reported elsewhere. The deposition rate per input magnetron power is found to increase slightly with the decrease in magnetic field for the process conditions considered in this study. Results suggest that the energy flux to the substrate tends to show a general decrease with the shift in the magnet assembly.

  4. Ion dynamics in a DC magnetron microdischarge measured with laser-induced fluorescence

    NASA Astrophysics Data System (ADS)

    Young, Christopher; Gascon, Nicolas; Lucca Fabris, Andrea; Ito, Tsuyohito; Cappelli, Mark

    2015-11-01

    We present evidence of coherent rotating azimuthal wave structures in a planar DC magnetron microdischarge operated with argon and xenon. The dominant stable mode structure varies with discharge voltage, and high frame rate camera imaging of plasma emission reveals propagating azimuthal waves in the negative E-> × B-> direction. This negative drift direction is attributed to a local field reversal arising from strong density gradients that drive excess ions towards the anode. Observed mode transitions are shown to be consistent with models of gradient drift-wave dispersion in such a field reversal when the fluid representation includes ambipolar diffusion parallel to the magnetic field direction. Time-averaged and time-resolved laser-induced fluorescence measurements interrogate xenon ion dynamics under the action of the field reversal. Time resolution is obtained by synchronizing with the coherent azimuthal wave frequency at fixed mode number. This work is sponsored by the U.S. Air Force Office of Scientific Research with Dr. Mitat Birkan as program manager. C.Y. acknowledges support from the DOE NNSA Stewardship Science Graduate Fellowship under Contract DE-FC52-08NA28752.

  5. ZnO:Al films prepared by inline DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bingel, Astrid; Füchsel, Kevin; Kaiser, Norbert; Tünnermann, Andreas

    2014-02-01

    Aluminum-doped zinc oxide (AZO) is one of the most promising transparent conductive oxide (TCO) materials that can substitute the high-quality but costly indium tin oxide (ITO). To ensure high-quality films as well as moderate production costs, inline DC magnetron sputtering was chosen to deposit thin AZO films. The influence of sputter gas pressure, substrate temperature, and film thickness on the electrical, optical, and structural properties was analyzed. The resistivity reaches a minimum of 1.3×10-5 Ωm at around 1 Pa for a substrate temperature of 90°C. A maximum conductivity was obtained by increasing the substrate temperature to 160°C. An annealing step after deposition led to a further decrease in resistivity to a value of 5.3×10-6 Ωm in a 200 nm thin film. At the same time, the optical performance could be improved. Additionally, simulations of the transmittance and reflectance spectra were carried out to compare carrier concentration and mobility determined by optical techniques with those from Hall measurements.

  6. Structural and optical properties investigation of DC magnetron sputtered β-TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Khan, Shakil; Ahmed, Ishaq; Shah, A.

    2014-10-01

    Thin films of monoclinic titanium oxide phase (β-TiO2) have been grown on glass substrate using DC magnetron sputtering technique. The effect of oxygen conditions on the films stoichiometry, growth rate, structure, molecular mode of vibration and optical properties has been investigated. An improvement in stoichiometric ratio (O/Ti) has been observed with the increase of oxygen content in the synthesized chamber. XRD patterns demonstrated the polycrystalline nature of the deposited films with (2 bar 11) preferential orientation of β-TiO2 phase. In the FTIR analysis, a dominant peak at 868 cm-1 wavenumbers corresponding to the longitudinal optical (LO) mode of monoclinic TiO2 phase was observed at 10% oxygen condition. It shifted to 880 cm-1 wavenumbers at higher oxygen fractions, illustrated the rise of oxygen concentration in the grown films. The influence of various oxygen conditions on transmittance/extinction coefficient, band gap and refractive index of TiO2 (B) phase is reported.

  7. Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

    SciTech Connect

    Aji, A. S.; Darma, Y.

    2013-09-09

    In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by mean XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.

  8. Microstructure and tribological properties of Ti-contained amorphous carbon film deposited by DC magnetron sputtering

    SciTech Connect

    Li, R. L.; Tu, J. P.; Hong, C. F.; Liu, D. G.; Zhou, D. H.; Sun, H. L.

    2009-12-15

    Pure amorphous carbon (a-C) film and that with a small amount of Ti were deposited on high speed steel (W18Cr4V) substrates by means of dc closed field unbalanced magnetron sputtering. The chemical composition and microstructure of the a-C films were performed using x-ray photoelectron spectroscopy, x-ray diffraction, Raman spectra, and transmission electron microscopy. The mechanical and tribological properties were evaluated using a nanoindentor, Rockwell and scratch tests, and a conventional ball-on-disk tribometer, respectively. The pure a-C film showed the high hardness (53 GPa), elastic modulus (289 GPa), but the poor adhesive strength. When adding a small amount of Ti to the a-C film, both the adhesive strength and the tribological properties were improved. The Ti contained a-C film had the low wear rate (1.9x10{sup -17} m{sup 3} N{sup -1} m{sup -1}) and friction coefficient in humid air.

  9. Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films

    SciTech Connect

    Pamu, D.; Sudheendran, K.; Ghanashyam Krishna, M.; James Raju, K. C.

    2008-03-15

    Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, even at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.

  10. Room temperature growth of nanocrystalline anatase TiO 2 thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Preetam; Kaur, Davinder

    2010-03-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  11. Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Zhang, Bo; Xu, Yan-Hui; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

    2015-12-01

    TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin film coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) and X-Ray Diffraction (XRD). The grain size of TiZrV and Pd films were about 0.42-1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2-4 nm, but for Pd film it is large, about 17-19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results. Supported by National Natural Science Funds of China (11205155) and Fundamental Research Funds for the Central Universities (WK2310000041)

  12. Electron density modulation in an asymmetric bipolar pulsed dc magnetron discharge

    SciTech Connect

    Karkari, S. K.; Ellingboe, A. R.; Gaman, C.; Swindells, I.; Bradley, J. W.

    2007-09-15

    This paper investigates the spatial and temporal variation in plasma electron density over a region between 5 and 10 cm above the race-track region of a pulsed magnetron sputtering target. The pulse operation is performed using an asymmetric bipolar pulsed dc power supply, which provides a sequence of large negative ''on-phase'' voltage (-350 V) and a small positive ''reverse-phase'' voltage (+10 V) for 55% of the pulse duration (10 {mu}s). The electron density is measured using a floating microwave hairpin resonance probe. The results show electron expulsion from the target in the initial on phase, which propagates with a characteristic speed exceeding the ion thermal speed. In the steady state on phase, a consistent higher density is observed. A quantitative model has been developed to explain the resultant density drops in the initial on phase. While in the reverse phase, we observed an anomalous growth in density at a specific location from the target (d>7 cm). The mechanism behind the increase in electron density has been attributed to the modulation in spatial plasma potential, which was measured earlier in the same apparatus using a floating emissive probe [J. W. Bradley et al., Plasma Sources Sci. Technol. 13, 189 (2004)].

  13. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    SciTech Connect

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-07-15

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H{sub 2} gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H{sub 2} (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10{sup -4} {omega} cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H{sub 2} gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films.

  14. Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

    NASA Astrophysics Data System (ADS)

    Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

    2016-06-01

    High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

  15. Effect of Argon/Oxygen Flow Rate Ratios on DC Magnetron Sputtered Nano Crystalline Zirconium Titanate Thin Films

    NASA Astrophysics Data System (ADS)

    Rani, D. Jhansi; Kumar, A. GuruSampath; Sarmash, T. Sofi; Chandra Babu Naidu, K.; Maddaiah, M.; Rao, T. Subba

    2016-04-01

    High transmitting, non absorbent, nano crystalline zirconium titanate (ZT) thin films suitable for anti reflection coatings (ARC) were deposited on to glass substrates by direct current (DC) magnetron reactive sputtering technique, under distinct Argon to Oxygen (Ar/O2) gas flow rate ratios of 31/1, 30/2, 29/3 and 28/4, with a net gas flow (Ar + O2) of 32sccm, at an optimum substrate temperature of 250°C. The influence of the gas mixture ratio on the film properties has been investigated by employing x-ray diffraction (XRD), ultra violet visible (UV-vis) spectroscopy, atomic force microscopy (AFM), energy dispersive x-ray analysis (EDX) and four point probe methods. The films showed a predominant peak at 30.85° with (111) orientation. The crystallite size reduced from 22.94 nm to 13.5 nm and the surface roughness increased from 11.53 nm to 50.58 nm with increase in oxygen content respectively. The films deposited at 31/1 and 30/2 showed almost similar chemical composition. Increased oxygen content results an increase in electrical resistivity from 3.59 × 103 to 2.1 × 106 Ωm. The film deposited at Ar/O2 of 28/4 exhibited higher average optical transmittance of 91%, but its refractive index is higher than that of what is required for ARC. The films deposited at 31/1 and 30/2 of Ar/O2 possess higher transmittance (low absorbance) apart from suitable refractive index. Thus, these films are preferable candidates for ARC.

  16. Microstructural studies of nanocomposite thin films of Ni/CrN prepared by reactive magnetron sputtering.

    PubMed

    Kuppusami, P; Thirumurugesan, R; Divakar, R; Kataria, S; Ramaseshan, R; Mohandas, E

    2009-09-01

    Synthesis and characterization of nanocomposites of Ni/CrN thin films prepared by DC magnetron sputtering from a target of 50 wt.%Ni-50 wt.%Cr is investigated. The films prepared as a function of nitrogen flow rate and substrate temperature showed that the films contained Ni and CrN phases with crystallite sizes in the nanometer range. Measurement of nanomechanical properties of the composite films exhibited a significant decrease in the values of hardness and Young's modulus than those of pure CrN films. PMID:19928270

  17. Influence of nitrogen flow rate on microstructural and nanomechanical properties of Zr-N thin films prepared by pulsed DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, Akash; Kuppusami, P.; Khan, Shabana; Sudha, C.; Thirumurugesan, R.; Ramaseshan, R.; Divakar, R.; Mohandas, E.; Dash, S.

    2013-09-01

    Zr-N thin films were deposited on Si (1 0 0) substrate by reactive sputtering using a pulsed DC magnetron sputtering technique. It was found that films deposited at 773 K and 1 sccm of nitrogen flow rate show a single phase with face centred cubic-ZrN. Raman analysis also confirmed the formation of ZrN phase in the films. The films deposited at nitrogen flow rate greater than 1 sccm show ZrN along with orthorhombic-Zr3N4. The chemical bonding characteristics of the films were analyzed by X-ray photoelectron spectroscopy. High resolution transmission electron microscopy also gave evidence for fcc-ZrN and o-Zr3N4 phase and revealed equiaxed grains in these films. In addition, hardness and Young's modulus of the films measured as a function of nitrogen flow rate is discussed qualitatively in relation to resistance to plastic deformation offered by these films.

  18. Effect of Duty Cycle on Characteristics of CrNx Thin Films Deposited by Pulsed Direct Current Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Chang, Chi-Lung; Wu, Bo-Yi; Chen, Pin-Hung; Chen, Wei-Chih; Ho, Chun-Ta; Wu, Wan-Yu

    2013-11-01

    CrNx thin films have been deposited on silicon wafer, 304 stainless steel, and tungsten carbide substrates using pulsed DC reactive magnetron sputtering. A 10 kHz unipolar mode and a N2/Ar ratio of 17.5% were used. During the deposition, the substrate was not biased and not heated during the entire deposition time of 30 min. The microstructure, crystalline phase, and mechanical properties of the obtained CrNx thin films were examined to investigate the effect of the duty cycle. The results show that the maximum current and power density increase with decreasing duty cycle from 100% (DC) to 5%. Although the thickness of the CrNx thin films decreases with decreasing duty cycle, the ratio of the thickness to the pulse on-time shows a maximum of 273.3 nm/min at the lowest duty cycle of 5%. The obtained CrNx thin films show a mixture of the Cr2N and CrN phases. Moreover, the Cr-N bonding state and the percentages of CrN and Cr2N vary with the duty cycle. The effects of the duty cycle on the hardness, coefficient of friction, and corrosion behavior of the CrNx thin films are also investigated in this study.

  19. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Oezer, D.; Sanjines, R.; Ramirez, G.; Rodil, S. E.

    2012-12-01

    The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and

  20. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oezer, D.; Ramírez, G.; Rodil, S. E.; Sanjinés, R.

    2012-12-01

    The electrical and optical properties of TaxSiyNz thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-TaxSiyNz thin films were prepared: sub-stoichiometric TaxSiyN0.44, nearly stoichiometric TaxSiyN0.5, and over-stoichiometric TaxSiyN0.56. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the TaxSiyNz films due to variations in the stoichiometry of the fcc-TaNz system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-TaxSiyNz films can exhibit room temperature resistivity values ranging from 102 μΩ cm to about 6 × 104 μΩ cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the TaxSiyNz thin films provides a pertinent and consistent description of the evolution of the Ta-Si-N system from a solid solution to a nanocomposite material due to the addition of Si atoms.

  1. Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

    SciTech Connect

    Khan, Majid; Islam, Mohammad

    2013-12-15

    Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ∼550 nm and electrical resistivity value of 0.57 × 10{sup −4} Ω cm.

  2. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  3. Fabrication and characterization of ZnO/AI/ZnO multilayers by simultaneous DC and RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nagaraja, K. K.; Santhosh Kumar, A.; Nagaraja, H. S.

    2015-02-01

    The present investigation reports the fabrication and characterization of multilayered transparent electrodes by simultaneous DC and RF magnetron sputtering on glass substrates. The multilayer structure consists of three layers (ZnO/Al/ZnO). The influence of Al layer thickness on the electrical and optical properties was investigated. Optimum thickness of Al was determined for high transmittance and good electrical conductivity. High quality films having resistance as low as 25 Ω/sq with optical transmittance upto 65% were obtained at room temperature.

  4. Observations of the long-term plasma evolution in a pulsed dc magnetron discharge

    NASA Astrophysics Data System (ADS)

    Bäcker, H.; Bradley, J. W.

    2005-08-01

    Using a time-resolved Langmuir probe the temporal evolution of the plasma parameters in a pulsed dc magnetron discharge was determined for a number of positions both inside and outside the magnetic trap. The discharge was operated at a pulse frequency of 2 kHz with a 50% duty cycle, a titanium target and at a fixed argon pressure of 0.53 Pa. The electron density, ne, electron temperature, Te, plasma potential, Vp and floating potential, Vf have typically two-fold characteristic decay and rise times, which increase with distance from the target. In the magnetic trap, the initial ne decay rate is ~18 µs, lengthening to 120 µs. However, in the plasma bulk, this figure is about 250 µs at all times during the plasma decay. The ne decay rate on the discharge centreline is somewhat slower at about 600 µs. During the transition from duty on to off phases a 'density-wave', initiated at the cathode, is observed to propagate downstream at about 1000 m s-1 (a velocity close to the calculated ion acoustic speed). The results reveal a complex picture in terms of the electron energies. In the off time, the electrons are characterized by a single Maxwellian distribution function and the initial Te decay times are between 6 and 10 µs. However, these lengthen dramatically to values between 600 and 800 µs depending on position to give a final Te value of about 0.2-0.3 eV. In the on time, and outside the magnetic trap, bi-Maxwellian electrons are observed with Teh = 4-6 eV and Tec = 1-2 eV. A simple model, taking into account the effect of the magnetic field on electron collection at the probe, has been used to show that the relative density of hot electrons is as high as 40%. On magnetic field lines that connect with the walls, bi-Maxwellian electrons exist during the whole on period; however, on the centreline their temperatures converge after about 100 µs to form a single distribution with Te ~ 3 eV. Plasma potential measurements show that the strong axial electric fields in

  5. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  6. Influences of annealing temperature on microstructure and properties for TiO2 films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shang, Jie-Ting; Chen, Chih-Ming; Cheng, Ta-Chih; Lee, Ying-Chieh

    2015-12-01

    Titanium dioxide films were deposited at 100 °C of substrate temperature with a DC magnetron sputtering system. The crystalline structures, morphological features, and photocatalytic activity of the TiO2 films were systematically studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and ultraviolet spectrophotometry. To obtain the crystalline structure of TiO2 film at a low annealing temperature, high-level DC power (600 W) was applied. The effect of the annealing treatments on the microstructure of the TiO2 films was investigated. The results indicated that the annealing process at 200 °C clearly caused the formation of a nanocrystalline anatase phase that directly affected photocatalytic activity. The dye removal efficiency of the nanostructured anatase attained 53 and 31% for UV and visible light radiation, respectively.

  7. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics. PMID:24245329

  8. Comparing a 2D fluid model of the DC planar magnetron cathode to experiments

    SciTech Connect

    Garcia, M.

    1996-05-01

    Planar magnetron cathodes have arching magnetic field lines which concentrate plasma density near the electrode surface. This enhances the ion bombardment of the surface and the yield of sputtered atoms. Magnetron cathodes are used in the Plasma Electrode Pockels Cell (PEPC) devices of the Laser Program because they provide for significantly higher conduction than do glow discharges. An essential feature of magnetron cathodes is that the vector product of the perpendicular electric field, E[sub y], with the parallel component of the magnetic field, B[sub x], forms a closed track with a circulating current along the cathode surface. An analytical, 2D, two component, quasi-neutral, continuum model yields formulas for the plasma density, the total and component current densities, the electric field, and the positive electrical potential, between the cathode surface and a distant, uniform plasma. For a specific gas, the free parameters are electron temperature, gas number density, and total current. The model is applied to the interpretation of experimental data from the PEPC device, as well as a small vacuum facility for testing magnetron cathodes. Finally, the model has been applied to generate cross sectional views of a PEPC magnetron cathode track.

  9. Temperature-dependent microstructural evolution of Ti2AlN thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Zheng; Jin, Hongmei; Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun; Sullivan, Michael B.; Wang, Shi Jie

    2016-04-01

    Ti2AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti2Al compound target in a mixed N2/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti2AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti2AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  10. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  11. Deposition of aluminum-doped zinc oxide thin films for optical applications using rf and dc magnetron sputter deposition

    SciTech Connect

    Sivakumar, Kousik; Rossnagel, S. M.

    2010-07-15

    Aluminum-doped zinc oxide films were deposited by dc and rf magnetron sputtering from ZnO(98%)Al{sub 2}O{sub 3}(2%) target at room temperature on silicon and glass substrates under a variety of process conditions with the goal of attaining the highest transmittance and lowest resistivity for photovoltaic applications. The magnetron power and pressure were varied. For many dielectric deposition systems, added oxygen is necessary to achieve the appropriate stoichiometry. The effect of oxygen on film properties was then studied by varying the oxygen partial pressure from 1.5x10{sup -5} to 4.0x10{sup -5} T at a constant Ar pressure, with the result that any added oxygen was deleterious. Films deposited under power, pressure, and low-oxygen conditions were then characterized for electrical and optical properties. Following this, the dc and rf sputtered films were annealed at up to 400 deg. C seconds using rapid thermal annealing (RTA), and the influence of annealing on resistivity, transmittance, band gap, as well as grain growth and stress was studied. The effect of RTA was immediate and quite significant on dc films while the effect on rf films was not as profound. As-deposited rf films had a higher average transmittance (87%) and lower resistivity (5.5x10{sup -4} {Omega} cm) compared to as-deposited dc films (84.2% and 8.9x10{sup -4} {Omega} cm). On the other hand, after RTA at 400 deg. C for 60 s, dc films exhibited better average transmittance (92.3%) and resistivity (2.9x10{sup -4} {Omega} cm) than rf films (90.7% and 4.0x10{sup -4} {Omega} cm). The band gap of dc films increased from 3.55 to 3.80 eV while that of rf films increased from 3.76 to 3.85 eV. Finally, dc and rf films were textured in 0.1% HCl and compared to U-type Asahi glass for resistivity and transmittance.

  12. Growth and characterization of chromium oxide coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Barshilia, Harish C.; Rajam, K. S.

    2008-12-01

    Approximately 0.2-3.2 μm thick single phase chromium oxide (Cr 2O 3) coatings with different oxygen flow rates were deposited on silicon and mild steel substrates at low substrate temperature (˜60 °C) by pulsed-direct current (DC) reactive unbalanced magnetron sputtering. Two asymmetric bipolar-pulsed DC generators were used to co-sputter two Cr targets, in Ar + O 2 plasma. The coatings were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation hardness tester, optical microscopy, atomic force microscopy, micro-Raman spectroscopy, spectroscopic ellipsometry and potentiodynamic polarization techniques. The XRD data showed the presence of mixture of crystalline (rhombohedral Cr 2O 3) and amorphous phases for the coatings prepared with oxygen flow rate less than 10 sccm. A complete transformation to amorphous phase was observed at higher oxygen flow rates. The XRD results were supported by Raman spectroscopy data. The XPS data suggested that the chemical state of Cr was in the form of Cr 3+. The chromium oxide coatings exhibited a maximum hardness of 22 GPa and an elastic modulus of 208 GPa. The coatings exhibited high thermal stability upon annealing in vacuum up to 500 °C and retained hardness as high as 17 GPa. Spectroscopic ellipsometry data indicated that coatings prepared at higher oxygen flow rates were dielectric in nature and those prepared at low oxygen flow rates exhibited an intermediate character, i.e., a transition between the dielectric and the metallic behavior. The corrosion behavior of Cr 2O 3 coating deposited on mild steel substrates was investigated using potentiodynamic polarization in 3.5% NaCl solution. The results indicated that Cr 2O 3 coating exhibited superior corrosion resistance as compared to the uncoated substrate.

  13. Tribological Properties of CrN/AlN Films Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Rojo, A.; Solís, J.; Oseguera, J.; Salas, O.; Reichelt, R.

    2010-04-01

    The microstructure of CrN/AlN films, prepared by reactive magnetron sputtering under various conditions, was analyzed and related to the wear behavior of the films. One set of films was prepared by conventional reactive magnetron sputtering, a second set adding an extra amount of reactive gas to the initial Ar + N2 mixture and a third set adding an extra source of nitrogen near the substrate during sputtering. The samples were analyzed by scanning electron microscopy + energy dispersive microanalysis, high resolution scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results of the microstructural analysis revealed a clear difference in the morphology growth of the films when extra nitrogen was used compared to the conventionally prepared films. Formation of CrN was significantly faster than that of AlN. The most effective method to produce AlN was to introduce extra nitrogen. Pin-on-disk wear experiments were carried out in ambient air, to investigate the tribological behavior of the CrN/AlN system against a steel ball under dry conditions for various loads and a constant sliding speed. The results revealed that tribological properties of the layers improved unlike those of the untreated H13 steel. The friction behavior is closely related to the structure of the deposited films. The thicker CrN layer contributed to the higher load capacity of the coated steel when compared to the unmodified steel. However, wear life for the coating system was very short, denoted by the fairly poor adhesion of the film system to the steel substrate.

  14. Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Dutta, Gargi; Waghmare, Umesh V.; Mohan Rao, G.

    2007-10-01

    Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

  15. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  16. Deposition of ultrahard Ti-Si-N coatings by pulsed high-current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Zakharov, A. N.; Rabotkin, S. V.; Solov'ev, A. A.

    2016-02-01

    We report on the results of investigation of properties of ultrahard Ti-Si-N coatings deposited by pulsed high-current magnetron reactive sputtering (discharge pulse voltage is 300-900 V, discharge pulse current is up to 200 A, pulse duration is 10-100 μs, and pulse repetition rate is 20-2000 Hz). It is shown that for a short sputtering pulse (25 μs) and a high discharge current (160 A), the films exhibit high hardness (66 GPa), wear resistance, better adhesion, and a lower sliding friction coefficient. The reason is an enhancement of ion bombardment of the growing coating due to higher plasma density in the substrate region (1013 cm-3) and a manifold increase in the degree of ionization of the plasma with increasing peak discharge current (mainly due to the material being sputtered).

  17. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  18. Physical properties of erbium implanted tungsten oxide filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-11-08

    Amorphous and partially crystalline WO3 thin films wereprepared by reactive dual magnetron sputtering and successively implantedby erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015ions/cm2. The electrical and optical properties were studied as afunction of the film deposition parameters and the ion fluence. Ionimplantation caused a strong decrease of the resistivity, a moderatedecrease of the index of refraction and a moderate increase of theextinction coefficient in the visible and near infrared, while theoptical band gap remained almost unchanged. These effects could belargely ascribed to ion-induced oxygen deficiency. When annealed in air,the already low resistivities of the implanted samples decreased furtherup to 70oC, whereas oxidation, and hence a strong increase of theresistivity, was observed at higher annealing temperatures.

  19. Characteristics of DLC containing Ti and Zr films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Guojia; Lin, Guoqiang; Sun, Gang; Zhang, Huafang; Wu, Hongchen

    The purpose of this paper is to investigate metal doping effects on micro-structural, mechanical and corrosive behavior of the DLC film. Ti and Zr doped DLC films were prepared on NiTi alloys by reactive magnetron sputtering combined with plasma source ion implantation (PSII) technology used to improve the coherent strength, respectively. The mechanical properties of the doped DLC films were investigated by means of nano-indentation technique, microscratch and frictional wear testing. The potentiodynamic polarization measurement was employed to value the corrosion resistance of DLC with Ti and Zr films in Hank's simulated body fluid. It was found that Ti-doped DLC films embraced higher nano-hardness, somewhat lower coefficient of friction and better corrosion resistance than Zr-doped DLC films.

  20. Amorphous stainless steel coatings prepared by reactive magnetron-sputtering from austenitic stainless steel targets

    NASA Astrophysics Data System (ADS)

    Cusenza, Salvatore; Schaaf, Peter

    2009-01-01

    Stainless steel films were reactively magnetron sputtered in argon/methane gas flow onto oxidized silicon wafers using austenitic stainless-steel targets. The deposited films of about 200 nm thickness were characterized by conversion electron Mössbauer spectroscopy, magneto-optical Kerr-effect, X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectrometry, atomic force microscopy, corrosion resistance tests, and Raman spectroscopy. These complementary methods were used for a detailed examination of the carburization effects in the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of the substrate temperature and of post vacuum-annealing were examined to achieve a comprehensive understanding of the carburization process and phase formation.

  1. Metal versus rare-gas ion irradiation during Ti{sub 1-x}Al{sub x}N film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias

    SciTech Connect

    Greczynski, Grzegorz; Lu Jun; Jensen, Jens; Petrov, Ivan; Greene, Joseph E.; Bolz, Stephan; Koelker, Werner; Schiffers, Christoph; Lemmer, Oliver; Hultman, Lars

    2012-11-15

    Metastable NaCl-structure Ti{sub 1-x}Al{sub x}N is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 Degree-Sign C. Three sets of experiments are carried out: a -60 V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti{sub 1-x}Al{sub x}N) with random orientation, due primarily to intense Ar{sup +} irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8 GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar{sup +} ion bombardment is greatly reduced in favor of irradiation predominantly by Al{sup +} ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar{sup +} to Al{sup +} bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.

  2. Combined optical emission and resonant absorption diagnostics of an Ar-O2-Ce-reactive magnetron sputtering discharge

    NASA Astrophysics Data System (ADS)

    El Mel, A. A.; Ershov, S.; Britun, N.; Ricard, A.; Konstantinidis, S.; Snyders, R.

    2015-01-01

    We report the results on combined optical characterization of Ar-O2-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O2 content, etc. The absolute number density of the Arm is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Arm by O2 molecules at different oxygen contents. Quantitatively, the absolute number density of Arm is found to be equal to ≈ 3 × 108 cm- 3 in the metallic, and ≈ 5 × 107 cm- 3 in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime.

  3. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  4. Investigation of the microstructure and optical properties of Ge films grown by DC magnetron sputtering and in situ annealing

    NASA Astrophysics Data System (ADS)

    Li, Hui-Song; Qiu, Feng; Xin, Zheng-Hang; Wang, Rong-Fei; Yang, Jie; Zhang, Jin; Wang, Chong; Yang, Yu

    2016-06-01

    We investigate the microstructure and optical properties of Ge films on Si substrates prepared at low temperature by DC magnetron sputtering and the effect of in situ annealing on them. With increasing growth temperature, Ge films undergo a transition from amorphous to microcrystalline, then to polycrystalline. After annealing, these thin films transform into polycrystalline films with the (111) preferred orientation and identical crystal sizes. The surfaces of the amorphous and microcrystalline Ge films are severely coarsened, whereas the polycrystalline Ge film still displays a smooth surface. The growth mechanisms of Ge films with different crystalline phases in the annealing process are discussed, which can explain their morphology evolutions. Additionally, their infrared absorptions are enhanced after annealing, and this is useful for fabricating high-efficiency Si-based solar cells.

  5. Influences of working pressure on properties for TiO2 films deposited by DC pulse magnetron sputtering.

    PubMed

    Zhang, Can; Ding, Wanyu; Wang, Hualin; Chai, Weiping; Ju, Dongying

    2009-01-01

    TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system. The crystalline structures, morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet spectrophotometer, respectively. The results indicated that working pressure was the key deposition parameter influencing the TiO2 film phase composition at room temperature, which directly affected its photocatalytic activity. With increasing working pressure, the target self-bias decreases monotonously. Therefore, low temperature TiO2 phase (anatase) could be deposited with high working pressure. The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution, which the degradation rate reached the maximum (35%) after irradiation by ultraviolet light for 1 h. PMID:19803076

  6. Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr N on SS 316L and surface and mechanical properties of the deposited films

    NASA Astrophysics Data System (ADS)

    Fragiel, A.; Machorro, R.; Muñoz-Saldaña, J.; Salinas, J.; Cota, L.

    2008-05-01

    Optical and surface spectroscopies as well as nanoindentation techniques have been used to study ZrN coatings on 316L stainless steel obtained by DC-reactive magnetron sputtering. The deposit process was carried out using initial and working pressures of 10 -6 Torr and 10 -3 Torr, respectively. The experimental set-up for optical spectra acquisition was designed for the study in situ of the plasma in the deposition chamber. Auger spectroscopy, SEM and X-ray diffraction were used to characterize the coatings. Nanoindentation tests were carried out to measure the mechanical properties of the coating. Plasma characterization revealed the presence of CN molecules and Cr ions in the plasma. Surface spectroscopy results showed that ZrN, Zr 3N 4 and ZrC coexist in the coating. These results allowed the understanding of the mechanical behavior of the coatings, demonstrating the importance of the plasma characterization as a tool for tailoring the properties of hard coatings.

  7. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  8. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    SciTech Connect

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P.

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  9. Electrochromic properties of NiOx:H films deposited by DC magnetron sputtering for ITO/NiOx:H/ZrO2/WO3/ITO device

    NASA Astrophysics Data System (ADS)

    Dong, Dongmei; Wang, Wenwen; Dong, Guobo; Zhou, Yuliang; Wu, Zhonghou; Wang, Mei; Liu, Famin; Diao, Xungang

    2015-12-01

    NiOx:H thin films were deposited on ITO-coated glass by DC reactive magnetron sputtering at room temperature. The effects of the hydrogen content on the structure, morphologies, electrochemical properties, the stoichiometry and chemical states of NiOx:H thin films were systematically studied. In X-ray diffraction and atomic force microscopy analysis, the crystallinity of the films tends to be weakened when the flow amount ratio of Ar:O2:H2 equals 19:1:3 and as confirmed in electrochemical analysis, such relatively weak crystallinity is the main contributing factor to ion transportation. X-ray photoelectron spectroscopy reveals that the increase of the hydrogen contents results in a relatively lower binding energy exhibited in the Ni 2p spectra. The proportion of Ni2O3 in NiOx:H films increases from 22% at bleached state to 33% at colored state. A monolithic all-thin-film inorganic electrochromic device was fabricated with complementary configuration as ITO/NiOx:H/ZrO2/WO3/ITO. The electrochromic device with optimized NiOx:H thin films acting both as ion storage layer and proton-providing source displays high modulation efficiency of 68% at a fixed wavelength 550 nm.

  10. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  11. Mechanical properties of Ta-Al-N thin films deposited by cylindrical DC magnetron sputtering: Influence of N2% in the gas mixture

    NASA Astrophysics Data System (ADS)

    Darabi, Elham; Moghaddasi, Naghmeh; Reza Hantehzadeh, Mohammad

    2016-06-01

    Ta-Al-N thin films were deposited by cylindrical DC magnetron sputtering on a stainless steel substrate under varying nitrogen flow ratios ( N2 with respect to N2 + Ar in the range of 1.5%-9%. The effect of the N2 content in the reactive gas mixture on crystalline structure, surface morphology, and mechanical properties of Ta-Al-N thin films was investigated. The amount of Al and Ta in deposited films was obtained by energy dispersive X-ray spectroscopy (EDX) analysis and films thickness was measured by surface step profilometer. X-ray diffraction analysis (XRD) revealed that the crystalline structure of the Ta-Al-N polycrystalline thin film is a mixture of TaAl, TaN, and AlN crystalline phases. Surface morphology, roughness, and grain size were investigated by atomic force microscopy (AFM). The nano hardness of Ta-Al-N thin films, measured by the nanoindentation method, was about 9GPa maximum for samples prepared under 3% N2 , and the friction coefficient, obtained by nanoscratch analysis, was approximately 0.2 for all Ta-Al-N thin films. Other results were found to be affected considerably by increasing the N2 amount.

  12. Argon–oxygen dc magnetron discharge plasma probed with ion acoustic waves

    SciTech Connect

    Saikia, Partha Saikia, Bipul Kumar; Goswami, Kalyan Sindhu; Phukan, Arindam

    2014-05-15

    The precise determination of the relative concentration of negative ions is very important for the optimization of magnetron sputtering processes, especially for those undertaken in a multicomponent background produced by adding electronegative gases, such as oxygen, to the discharge. The temporal behavior of an ion acoustic wave excited from a stainless steel grid inside the plasma chamber is used to determine the relative negative ion concentration in the magnetron discharge plasma. The phase velocity of the ion acoustic wave in the presence of negative ions is found to be faster than in a pure argon plasma, and the phase velocity increases with the oxygen partial pressure. Optical emission spectroscopy further confirms the increase in the oxygen negative ion density, along with a decrease in the argon positive ion density under the same discharge conditions. The relative negative ion concentration values measured by ion acoustic waves are compared with those measured by a single Langmuir probe, and a similarity in the results obtained by both techniques is observed.

  13. Deposition of LaMnO 3 buffer layer on IBAD-MgO template by reactive DC sputtering

    NASA Astrophysics Data System (ADS)

    Kim, H. S.; Oh, S. S.; Ha, H. S.; Ko, R. K.; Ha, D. W.; Kim, T. H.; Youm, D. J.; Lee, N. J.; Moon, S. H.; Yoo, S. I.; Park, C.

    2009-10-01

    The deposition conditions of LaMnO 3 (LMO) buffer layer on Ion Beam Assisted Deposition (IBAD)-MgO template by reactive DC sputtering were investigated. We developed a specially designed chamber for reactive DC magnetron sputtering. The deposition chamber was composed of two sputtering guns with the mixed metallic target of La (50 at%) + Mn (50 at%), halogen lamp heater, QCM (Quartz Crystal Microbalance), RGA (Residual Gas Analyzer) and reel to reel tape moving system. We investigated the effect of oxygen flow rate on the deposition rate of LMO layer. We found that there was an optimal range of oxygen flow rate to have the desired layer. Above the range, the deposition rate decreased sharply and plasma was unstable. Below the range, the deposited layer was partially metallic. We investigated the effect of substrate temperature on the texturing of LMO layer. The texturing of LMO layer was improved by increasing the substrate temperature. We investigated the effect of deposition rate on the texturing of LMO layer. The LMO layer has a good texture in the deposition rate range of 0.07-0.21 nm/s. We confirmed that deposition rate had little effect on the texturing of LMO layer in the deposition rate range. Sm 1Ba 2Cu 3O 7-d superconducting layer was deposited on the LMO(reactive)/IBAD-MgO template. I c and J c were 81.6 A and 1 MA/cm 2. This means that LMO layer deposited by reactive DC sputtering shows a good performance in superconductor coated conductor.

  14. Fabrication of LiCoO{sub 2} thin film cathodes by DC magnetron sputtering method

    SciTech Connect

    Noh, Jung-pil; Cho, Gyu-bong; Jung, Ki-taek; Kang, Won-gyeong; Ha, Chung-wan; Ahn, Hyo-jun; Ahn, Jou-Hyeon; Nam, Tae-hyun; Kim, Ki-won

    2012-10-15

    LiCoO{sub 2} thin films were fabricated on Al substrate by direct current magnetron sputtering method. The effects of Ar/O{sub 2} gas rates and annealing temperatures were investigated. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction, Raman scattering spectroscopy and field emission scanning electron microscopy. The as-deposited LiCoO{sub 2} thin films exhibited amorphous structure. The crystallization starts at the annealing temperature over 400 °C. However, the annealed films have the partially disordered structure without completely ordered crystalline structure even at 600 °C annealing. The electrochemical properties of the LiCoO{sub 2} films were investigated by the charge–discharge and cycle measurements. The 500 °C annealing film has the highest capacity retention rate of 78.2% at 100th cycles.

  15. Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

    NASA Astrophysics Data System (ADS)

    Malau, Viktor; Ilman, Mochammad Noer; Iswanto, Priyo Tri; Jatisukamto, Gaguk

    2016-03-01

    Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10-2 torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10-6 mbar, a fluence of 2 x 1017 ions/cm2, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

  16. Cu/TiO2 thin films prepared by reactive RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sreedhar, M.; Reddy, I. Neelakanta; Bera, Parthasarathi; Ramachandran, D.; Gobi Saravanan, K.; Rabel, Arul Maximus; Anandan, C.; Kuppusami, P.; Brijitta, J.

    2015-08-01

    Cu/TiO2 thin films were deposited on glass substrates by reactive RF magnetron sputtering technique. Crystalline structure, surface morphology and electronic structure were studied using X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy (XPS). Transmittance and absorptance of these films were characterized by UV-Vis spectroscopy. XRD patterns demonstrate that TiO2 films deposited on glass substrate at 300 °C are observed to be in pure anatase phase, whereas Cu/TiO2 films are amorphous in nature at 300 °C substrate temperature. The crystallinity of Cu/TiO2 thin films decreases with increasing the dopant concentrations of Cu in TiO2 films. XPS studies show that Cu is in +2 oxidation state in all films. The optical band gap of Cu/TiO2 films decreases from ~3.3 to ~2.0 eV with the increase in the copper concentration. Further, antimicrobial studies of Cu/TiO2 films with ~3.9 at.% Cu exhibit high transmittance and best antimicrobial activity against E. coli and S. aureus compared to other doped films.

  17. Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

    SciTech Connect

    Reddy, R. Subba; Sreedhar, A.; Uthanna, S.

    2015-08-28

    Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was in the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.

  18. Synthesis of copper nitride films doped with Fe, Co, or Ni by reactive magnetron sputtering

    SciTech Connect

    Yang, Jianbo; Huang, Saijia; Wang, Zhijiao; Hou, Yuxuan; Shi, Yuyu; Zhang, Jian; Yang, Jianping Li, Xing'ao

    2014-09-01

    Copper nitride (Cu{sub 3}N) and Fe-, Co-, and Ni-doped Cu{sub 3}N films were prepared by reactive magnetron sputtering. The films were deposited on silicon substrates at room temperature using pure Cu target and metal chips. The molar ratio of Cu to N atoms in the as-prepared Cu{sub 3}N film was 2.7:1, which is comparable with the stoichiometry ratio 3:1. X-ray diffraction measurements showed that the films were composed of Cu{sub 3}N crystallites with anti-ReO{sub 3} structure and adopted different preferred orientations. The reflectance of the four samples decreased in the wavelength range of 400–830 nm, but increased rapidly within wavelength range of 830–1200 nm. Compared with the Cu{sub 3}N films, the resistivity of the doped Cu{sub 3}N films decreased by three orders of magnitude. These changes have great application potential in optical and electrical devices based on Cu{sub 3}N films.

  19. Mechanical and Tribological Behavior of VN and HfN Films Deposited via Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Escobar, C.; Villarreal, M.; Caicedo, J. C.; Esteve, J.; Prieto, P.

    2013-08-01

    HfN and VN thin films were deposited onto silicon and 4140 steel substrates with r.f. reactive magnetron sputtering by using Hf and V metallic targets with 4-inch diameter and 99.9% purity in argon/nitrogen atmosphere, applying a substrate temperature of 250°C and a pressure of 1.2 × 10-3 mbar. In order to evaluate the structural, chemical, morphological, mechanical and tribological properties, we used X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX), atomic force microscopy (AFM), scanning electron microscopy (SEM), nanoindentation, pin-on-disc and scratch tests. Film structure determined by XRD showed that FCC (NaCl-type) films are formed in both the cases by δ-HfN and δ-VN phases. Hardness and elastic modulus values obtained for both the films were 21 and 224 GPa for the HfN film and 19 and 205 GPa for the VN film, respectively. Additionally, the films showed low friction coefficient of 0.44 for HfN and 0.62 for VN when these films were evaluated against 100 Cr6 steel, and finally the critical load was found at 41 N for the HfN film and 34 N for the VN film.

  20. Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Liang-xian; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; Liu, Jin-long; Wei, Jun-jun

    2015-10-01

    Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (ZnO) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced ZnO films are obtained via Li doping. The average deposition rate for doped ZnO films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite-ZnO. X-ray diffraction analysis demonstrates that Li doping promotes the (002) preferential orientation in Li-doped ZnO films. However, an increase in the ZnO lattice constant, broadening of the (002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped ZnO will make significant applications in future surface acoustic wave devices.

  1. Structure, mechanical and tribological properties of HfCx films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shuo, Wang; Kan, Zhang; Tao, An; Chaoquan, Hu; Qingnan, Meng; Yuanzhi, Ma; Mao, Wen; Weitao, Zheng

    2015-02-01

    Hafnium carbide (HfC) films have been deposited on Si (1 0 0) substrates by direct current reactive magnetron sputtering. The microstructure, compressive stress, hardness and tribological behaviors show great dependence on carbon (C) concentration and chemical bonding state. With C content in HfCx films rising, phase transforms from hexagonal-close-packed (HCP) Hf(C) to face-centered-cubic (FCC) HfC, and nanocomposite structure consisting of HfCx nanocrystalline grains encapsulated by amorphous carbon (a-C) matrix forms at moderate C content. The hardness of HfCx films increases significantly from 10.4 GPa (14 at.% C) to 34.4 GPa (58 at.% C) and then keeps dropping with further increasing C content. a-C appears in HfCx films with more than 32 at.% C and it obviously lowers coefficient of friction (COF). The wear resistance can be remarkably worsened by high compressive stress. The film with 76 at.% C exhibits relatively high hardness and low compressive stress, good fracture toughness and self-lubrication transfer layer, showing great combination of the lowest COF of 0.10 and lowest wear rate of 1.10 × 10-6 mm3/Nm.

  2. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  3. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  4. Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-06-05

    Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

  5. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    SciTech Connect

    Sharma, S. K.; Mohan, S.; Bysakh, S.; Kumar, A.; Kamat, S. V.

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  6. Thermal stability of anisotropy in TbFe films prepared by dc-magnetron sputtering

    SciTech Connect

    Cheng, S.N.; Kryder, M.H. )

    1991-11-15

    We have found that stresses induced during magnetron sputter deposition of amorphous TbFe films are very important in determining the thermal stability of the perpendicular anisotropy, {ital K}{sub {ital u}}. To determine the stress-induced contribution to the anisotropy, the anisotropy was measured with a torque magnetometer before and after peeling films from their substrates. Data clearly show that the fractional change in anisotropy which occurs when the film is peeled from its substrate, {Delta}{ital K}{sub {ital u}}/{ital K}{sub {ital u}}, decreases with increasing Ar pressures. Furthermore, annealing studies reveal that the thermal stability of {ital K}{sub {ital u}} improves with increasing Ar sputtering pressure{minus}a trend which is in conflict with the tendency for films sputtered under low Ar pressure to be more oxidation resistant. This trend is attributed to the large stress-induced anisotropy component which exists at low argon pressures and its tendency to decrease as a result of long-term annealing. Measurements of the anisotropy of films which had been annealed at 200 {degree}C for 815 h showed that the residual {ital K}{sub {ital u}} after annealing increased with argon pressure. Measurements of the width of the peak in coercivity around {ital T}{sub comp} in these films shows that {ital H}{sub {ital c}} increases monotonically with argon pressure. This monotonic increase in {ital H}{sub {ital c}} is attributed to larger local variations in anisotropy caused by the less dense microstructure and the more random local anisotropy produced by the larger angle of incidence of adatoms which results from the increased scattering in the higher pressure sputtering gas.

  7. Ultrasensitive hydrogen sensor based on Pt-decorated WO₃ nanorods prepared by glancing-angle dc magnetron sputtering.

    PubMed

    Horprathum, M; Srichaiyaperk, T; Samransuksamer, B; Wisitsoraat, A; Eiamchai, P; Limwichean, S; Chananonnawathorn, C; Aiempanakit, K; Nuntawong, N; Patthanasettakul, V; Oros, C; Porntheeraphat, S; Songsiriritthigul, P; Nakajima, H; Tuantranont, A; Chindaudom, P

    2014-12-24

    In this work, we report an ultrasensitive hydrogen (H2) sensor based on tungsten trioxide (WO3) nanorods decorated with platinum (Pt) nanoparticles. WO3 nanorods were fabricated by dc magnetron sputtering with a glancing angle deposition (GLAD) technique, and decorations of Pt nanoparticles were performed by normal dc sputtering on WO3 nanorods with varying deposition time from 2.5 to 15 s. Crystal structures, morphologies, and chemical information on Pt-decorated WO3 nanorods were characterized by grazing-incident X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and photoelectron spectroscopy, respectively. The effect of the Pt nanoparticles on the H2-sensing performance of WO3 nanorods was investigated over a low concentration range of 150-3000 ppm of H2 at 150-350 °C working temperatures. The results showed that the H2 response greatly increased with increasing Pt-deposition time up to 10 s but then substantially deteriorated as the deposition time increased further. The optimally decorated Pt-WO3 nanorod sensor exhibited an ultrahigh H2 response from 1530 and 214,000 to 150 and 3000 ppm of H2, respectively, at 200 °C. The outstanding gas-sensing properties may be attributed to the excellent dispersion of fine Pt nanoparticles on WO3 nanorods having a very large effective surface area, leading to highly effective spillover of molecular hydrogen through Pt nanoparticles onto the WO3 nanorod surface. PMID:25422873

  8. Growth of fullerene-like carbon nitride thin solid films by reactive magnetron sputtering; role of low-energy ion irradiation in determining microstructure and mechanical properties

    NASA Astrophysics Data System (ADS)

    Neidhardt, J.; Czigány, Zs.; Brunell, I. F.; Hultman, L.

    2003-03-01

    Fullerene-like (FL) carbon nitride (CNx) films were deposited on Si (100) substrates by dc reactive, unbalanced, magnetron sputtering in a N2/Ar mixture from a high-purity pyrolythic graphite cathode in a dual-magnetron system with coupled magnetic fields. The N2 fraction in the discharge gas (0%-100%) and substrate bias (-25 V; -40 V) was varied, while the total pressure (0.4 Pa) and substrate temperature (450 °C) was kept constant. The coupled configuration of the magnetrons resulted in a reduced ion flux density, leading to a much lower average energy per incorporated particle, due to a less focused plasma as compared to a single magnetron. This enabled the evolution of a pronounced FL microstructure. The nitrogen concentration in the films saturated rapidly at 14-18 at. %, as determined by elastic recoil analysis, with a minor dependence on the discharge conditions. No correlations were detected between the photoelectron N1s core level spectra and the different microstructures, as observed by high-resolution electron microscopy. A variety of distinct FL structures were obtained, ranging from structures with elongated and aligned nitrogen-containing graphitic sheets to disordered structures, however, not exclusively linked to the total N concentration in the films. The microstructure evolution has rather to be seen as in equilibrium between the two competing processes of adsorption and desorption of nitrogen-containing species at the substrate. This balance is shifted by the energy and number of arriving species as well as by the substrate temperature. The most exceptional structure, for lower N2 fractions, consists of well-aligned, multi-layered circular features (nano-onions) with an inner diameter of approximately 0.7 nm and successive shells at a distance of ˜0.35 nm up to a diameter of 5 nm. It is shown that the intrinsic stress formation is closely linked with the evolution and accommodation of the heavily bent fullerene-like sheets. The FL CNx

  9. Current-voltage-time characteristics of the reactive Ar/N{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Magnus, F.; Sveinsson, O. B.; Olafsson, S.; Gudmundsson, J. T.

    2011-10-15

    The discharge current and voltage waveforms have been measured in a reactive high power impulse magnetron sputtering (HiPIMS) Ar/N{sub 2} discharge with a Ti target for 400 {mu}s long pulses. We observe that the current waveform in the reactive Ar/N{sub 2} HiPIMS discharge is highly dependent on the pulse repetition frequency, unlike the non-reactive Ar discharge. The current is found to increase significantly as the frequency is lowered. This is attributed to an increase in the secondary electron emission yield during the self-sputtering phase, when the nitride forms on the target at low frequencies. In addition, self-sputtering runaway occurs at lower discharge voltages when nitrogen is added to the discharge. This illustrates the crucial role of self-sputtering in the behavior of the reactive HiPIMS discharge.

  10. Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

    SciTech Connect

    Alfiadi, H. Aji, A. S. Darma, Y.

    2014-02-24

    Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.

  11. Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    De La Roche, J.; González, J. M.; Restrepo-Parra, E.; Sequeda, F.; Alleh, V.; Scharf, T. W.

    2014-11-01

    Titanium-doped tungsten bisulfide thin films (WS2-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS2 was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS2. Using the scratch test, the coatings' adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

  12. Mechanical and tribological properties of a-GeC{sub x} films deposited by dc-magnetron sputtering

    SciTech Connect

    Jacobsohn, L.G.; Reigada, D.C.; Freire, F.L. Jr.; Prioli, R.; Zanette, S.I.; Caride, A.O.; Nascimento, F.C.; Lepienski, C.M.

    1998-12-31

    Amorphous carbon-germanium films were grown by dc-magnetron sputtering at different argon plasma pressures ranging from 0.17 and 1.4 Pa. The water-cooled sample holder was grounded. The film thickness were typically 0.5 {micro}m. The ratio between germanium and carbon atomic concentration ranges up to 2.8, as measured by Rutherford backscattering spectrometry (RBS). Elastic recoil detection technique was used to measure hydrogen contamination. The film hardness was measured by nanoindentation techniques and the internal stress was determined by the bending of the substrate. The incorporation of Ge reduces both the film hardness and the internal stress. Hardness and internal stress increases when the films are deposited in lower pressures. Atomic Force Microscopy (AFM) was used to measure the surface roughness, which was found to be insensitive to the pressure and to the Ge content. A possible influence of the thickness on the morphology of pure carbon films is discussed. The friction coefficient measured by AFM is independent on the film composition within experimental errors.

  13. Corrosion resistance of zirconium oxynitride coatings deposited via DC unbalanced magnetron sputtering and spray pyrolysis-nitriding

    NASA Astrophysics Data System (ADS)

    Cubillos, G. I.; Bethencourt, M.; Olaya, J. J.

    2015-02-01

    ZrOxNy/ZrO2 thin films were deposited on stainless steel using two different methods: ultrasonic spray pyrolysis-nitriding (SPY-N) and the DC unbalanced magnetron sputtering technique (UBMS). Using the first method, ZrO2 was initially deposited and subsequently nitrided in an anhydrous ammonia atmosphere at 1023 K at atmospheric pressure. For UBMS, the film was deposited in an atmosphere of air/argon with a Φair/ΦAr flow ratio of 3.0. Structural analysis was carried out through X-ray diffraction (XRD), and morphological analysis was done through scanning electron microscopy (SEM) and atomic force microscopy (AFM). Chemical analysis was carried out using X-ray photoelectron spectroscopy (XPS). ZrOxNy rhombohedral polycrystalline film was produced with spray pyrolysis-nitriding, whereas using the UBMS technique, the oxynitride films grew with cubic Zr2ON2 crystalline structures preferentially oriented along the (2 2 2) plane. Upon chemical analysis of the surface, the coatings exhibited spectral lines of Zr3d, O1s, and N1s, characteristic of zirconium oxynitride/zirconia. SEM analysis showed the homogeneity of the films, and AFM showed morphological differences according to the deposition technique of the coatings. Zirconium oxynitride films enhanced the stainless steel's resistance to corrosion using both techniques. The protective efficacy was evaluated using electrochemical techniques based on linear polarization (LP). The results indicated that the layers provide good resistance to corrosion when exposed to chloride-containing media.

  14. Effects of argon pressure on the properties of ZnO:Ga thin films deposited by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Marwoto, Putut; Fatiatun, Sulhadi, Sugianto, Aryanto, Didik

    2016-03-01

    Gallium (Ga)-doped zinc oxide (ZnO:Ga) thin films were deposited on corning glass substrates by homemade DC magnetron sputtering. Effects of argon gas pressure on the structural and optical properties of ZnO:Ga thin films were investigated by XRD, SEM and UV-Vis spectroscopy. The argon gas pressure was adjusted at 450, 500 and 550 mtorr. All the films exhibit a strong (002) peak and a weak (004) peaks. The XRD pattern demonstrated that crystallinity of the film improved with increasing of the argon pressure. ZnO:Ga thin films deposited have polycrystalline structure. It was shown that the argon pressure has a great influence on ZnO:Ga film surface structures. The grain size of the films was increased with the increases of argon pressure. The grains shape of the film change from an equiaxed rough grain to a longish grain with the argon pressure. The average of transmittance of the films is about 80% in the visible range. It is shown that the argon pressure has no effect significantly on optical bandgap of ZnO:Ga, but in general it can be explained that increasing of the argon pressure can reduce the bandgap. The optical bandgap of ZnO:Ga thin films in the range of 3.25 - 3.3 eV.

  15. Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

    1988-01-01

    Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

  16. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  17. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, M.-C.; Chang, L.-S.; Lin, H. C.

    2008-03-01

    Titanium oxynitride (TiN xO y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN xO y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm 2 to 7 W/cm 2. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN xO y films deposited at power densities above 4 W/cm 2 show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN xO y films reach values as low as 0.98 g/m 2-day-atm and 0.60 cm 3/m 2-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al 2O 3 barrier films. Therefore, TiN xO y films are potential candidates to be used as a gas permeation barrier for PET substrate.

  18. Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering

    SciTech Connect

    Thiele, E.S.; Wang, L.S.; Mason, T.O.; Barnett, S.A. . Dept. of Materials Science Northwestern Univ., Evanston, IL . Materials Research Center)

    1991-11-01

    Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr--Y target in Ar--O{sub 2} mixtures. Hysteresis was observed as a function of oxygen flow rate {ital f}. For a discharge current of 0.4 A and a total pressure {ital P} of 5 mTorr, for example, the target oxidized at {ital f}{gt}2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 {mu}m/h in the metallic mode and 0.1 {mu}m/h in the oxide mode. Fully oxidized (Y{sub 2}O{sub 3}){sub 0.1}(ZrO{sub 2}){sub 0.9} was obtained for {ital f}{gt}2.0 ml/min, even in the metallic mode. While films deposited with {ital P}=3--20 mTorr were continuous, for {ital P}{gt}20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For {ital P}{lt}3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350 {degree}C. Temperature-dependent impedance spectroscopy analysis of YSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

  19. Spectroscopic ellipsometry and x-ray photoelectron spectroscopy of La{sub 2}O{sub 3} thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Atuchin, V. V.; Kalinkin, A. V.; Kochubey, V. A.; Kruchinin, V. N.; Vemuri, R. S.; Ramana, C. V.

    2011-03-15

    Lanthanum oxide (La{sub 2}O{sub 3}) films were grown by the reactive dc magnetron sputtering and studied their structural, chemical and optical parameters. La{sub 2}O{sub 3} films were deposited onto Si substrates by sputtering La-metal in a reactive gas (Ar+O{sub 2}) mixture at a substrate temperature of 200 deg. C Reflection high-energy electron diffraction measurements confirm the amorphous state of La{sub 2}O{sub 3} films. Chemical analysis of the top-surface layers evaluated with x-ray photoelectron spectroscopy indicates the presence of a layer modified by hydroxylation due to interaction with atmosphere. Optical parameters of a-La{sub 2}O{sub 3} were determined with spectroscopic ellipsometry (SE). There is no optical absorption over spectral range {lambda}=250-1100 nm. Dispersion of refractive index of a-La{sub 2}O{sub 3} was defined by fitting of SE parameters over {lambda}=250-1100 nm.

  20. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    SciTech Connect

    Högberg, Hans Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars; Samuelsson, Mattias

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  1. Reactive pulsed-DC sputtered Nb-doped VO2 coatings for smart thermochromic windows with active solar control.

    PubMed

    Batista, C; Carneiro, J; Ribeiro, R M; Teixeira, V

    2011-10-01

    Thermochromic VO2 thin films have successfully been grown on SiO2-coated float glass by reactive pulsed-DC magnetron sputtering. Different Nb doping amounts were introduced in the VO2 solid solution during the film growing which resulted in films with distinct semiconducting-metal phase transition temperatures. Pure VO2 showed improved thermochromic behavior as compared with VO2 films prepared by conventional DC sputtering. The transition temperatures were linearly decreased from 59 down to 34 degrees C with the increase in Nb content. However, the luminous transmittance and the infrared modulation efficiency were markedly affected. The surface morphology of the films was examined by scanning electron microscopy (SEM) and showed a tendency for grain sized reduction due to Nb addition. Moreover, the films were found to be very dense with no columnar microstructure. Structural analyses carried out by X-ray diffractometry (XRD) revealed that Nb introduces significant amount of defects in the crystal lattice which clearly degrade the optical properties. PMID:22400299

  2. Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

    SciTech Connect

    Marwoto, Putut; Made, D. P. Ngurah; Sugianto; Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya; Othaman, Zulkafli

    2013-09-03

    Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

  3. Indium-tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

    NASA Astrophysics Data System (ADS)

    Gu, Jin-Hua; Si, Jia-Le; Wang, Jiu-Xiu; Feng, Ya-Yang; Gao, Xiao-Yong; Lu, Jing-Xiao

    2015-11-01

    The indium-tin oxide (ITO) film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction (HJ) solar cells. To obtain high transmittance and low resistivity ITO films by direct-current (DC) magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4×10-4 Ω·m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions: oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si:H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage (Voc) of 0.626 V, a filling factor (FF) of 0.50, and a short circuit current density (Jsc) of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si:H layer was inserted between the (p) a-Si:H and (n) c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si:H. Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA050501).

  4. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Birkett, Martin; Penlington, Roger

    2016-07-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25–40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs–Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10–1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of ‑55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C‑1.

  5. Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ju, Hongbo; Xu, Junhua

    2015-11-01

    Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al2O3 depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2-13.5 at.%, which showed low average friction coefficient values of 0.46-0.40 and wear rate values of 1.1 × 10-8 to 1.7 × 10-8 mm3/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO3 detected on the surface of the wear tracks could lead to the friction coefficient curve stay constant and decrease the average friction coefficients. The decrease of wear rate was mainly attributed to the lubricant tribo-film AgNbO3 as Ag content increased from 4.0 to 9.2 at.%; with a further increase in Ag content, the wear rate increased with increasing Ag content in NbN-Ag films because a

  6. Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta–N films

    NASA Astrophysics Data System (ADS)

    Salamon, K.; Radić, N.; Bogdanović Radović, I.; Očko, M.

    2016-05-01

    Thin films of tantalum nitride (Ta–N) have been prepared by reactive magnetron deposition under various nitrogen partial pressures p{{\\text{N}}2} (0-1) and subsequently annealed (T a   =  450–950 °C). The structure, density, composition and electrical resistivity of the prepared films were systematically investigated. A p{{\\text{N}}2}-{{T}a} phase map was constructed from the results of structural analysis. With increasing of p{{\\text{N}}2} from 0 to 0.2, a single-phase or two-phase mixture films of tetragonal Ta, Ta2N ({{T}a}≥slant 450 °C), ɛ-TaN ({{T}a}≥slant 850 °C), θ-TaN ({{T}a}≥slant 850 °C) and fcc δ-TaN are sequentially observed. For p{{\\text{N}}2}=0.25 –0.45, the as grown and annealed films exhibit δ-TaN structure. Amorphous films grown in the p{{\\text{N}}2}=0.45 –0.75 range crystallize as cubic Ta2N3 upon annealing at {{T}a}≥slant 650 °C or as δ-TaN at {{T}a}≥slant 850 °C. A cubic Ta2N3 is grown at highest p{{\\text{N}}2} (≥slant 0.85), which decomposes to δ-TaN at {{T}a}≥slant 850 °C. The N     / Ta atomic ratio in the film linearly increases for p{{\\text{N}}2}=0 –0.5, ranging from 0 to 2.1, while the mass density monotonically decreases with p{{\\text{N}}2} . Upon annealing, a part of N atoms out-diffuses from the films deposited at p{{\\text{N}}2}≥slant 0.3 . The electrical resistivity strongly depends on both p{{\\text{N}}2} and T a . However, in the as grown and annealed δ-TaN films the resistivity was of the order of 100–1000 μ Ω cm. In these films, a correlation between the resistivity and the average number of defects (Ta vacancies and N atom excess) is observed. Finally, the influence of thermally introduced oxygen on the films resistivity has been revealed.

  7. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

    SciTech Connect

    Mei, A. B.; Zhang, C.; Sardela, M.; Eckstein, J. N.; Rockett, A.; Howe, B. M.; Hultman, L.; Petrov, I.; Greene, J. E.

    2013-11-15

    Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}‖(001){sub MgO} and [100]{sub ZrN}‖[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ{sub 300K} of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup −8}Ω-cm K{sup −1}, a residual resistivity ρ{sub o} below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ{sub 300Κ}/ρ{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ{sub ‖} = 18 nm and ξ{sub ⊥} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.

  8. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  9. Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Shayestehaminzadeh, Seyedmohammad E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.; Olafsson, Sveinn

    2015-11-15

    This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  10. Influence of film thickness on the morphological and electrical properties of epitaxial TiC films deposited by reactive magnetron sputtering on MgO substrates

    NASA Astrophysics Data System (ADS)

    Zoita, N. C.; Braic, V.; Danila, M.; Vlaicu, A. M.; Logofatu, C.; Grigorescu, C. E. A.; Braic, M.

    2014-03-01

    Epitaxial TiC films were deposited on MgO (001) by DC magnetron sputtering in a reactive atmosphere of Ar and CH4 at 800 °C. The films elemental composition and chemical bonding was investigated by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The crystallographic structure, investigated by X-ray diffraction, exhibited an increased degree of (001) orientation with the film thickness, with a cube-on-cube epitaxial relationship with the substrate. The films morphology and electrical properties were determined by atomic force microscopy (AFM) and Hall measurements in Van der Pauw geometry. The influences of the film thickness (57-545 nm) on the morphological and electrical properties were investigated. The thinnest film presented the lowest resistivity, ~160 μΩ cm, showing an atomically flat surface, while higher values were obtained for the thicker films, explained by their different morphology dominated by low aspect ratio nanoislands/nanocolumns.

  11. Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Jin, Hao; Feng, Bin; Dong, Shurong; Zhou, Changjian; Zhou, Jian; Yang, Yi; Ren, Tianling; Luo, Jikui; Wang, Demiao

    2012-07-01

    Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness ( R rms) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient ( k {t/2}) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively.

  12. Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

    SciTech Connect

    Marikkannan, M.; Subramanian, M.; Tanemura, M.; Mayandi, J. E-mail: jeyanthinath@yahoo.co.in; Vishnukanthan, V.; Pearce, J. M. E-mail: jeyanthinath@yahoo.co.in

    2015-01-15

    Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H

  13. Electrochromism in surface modified crystalline WO3 thin films grown by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2013-10-01

    In the present work, tungsten oxide thin films were deposited at various oxygen chamber pressures (1.0-5.0 × 10-3 mbar) by maintaining the sputtering power density and argon pressure constant at 3.0 W/cm2 and 1.2 × 10-2 mbar, respectively. The role of surface morphology and porosity on the electrochromic properties of crystalline tungsten oxide thin films has been investigated. XRD and Raman studies reveal that all the samples post annealed at 450 ̊C in air for 3.0 h settle in monoclinic crystal system of tungsten oxide (W18O49). Though the phase of material is indifferent to oxygen pressure variations (PO2), morphology and film density shows a striking dependence on PO2. A systematic study on plasma (OES), morphology, optical and electrochromic properties of crystalline tungsten oxide reveal that the films deposited at PO2 of 2.0 × 10-3 mbar exhibit better coloration efficiency (58 cm2/C), electron/ion capacity (Qc: -25 mC/cm2), and reversibility (92%). This is attributed to the enhanced surface properties like high density of pores and fine particulates (100 nm) and to lesser bulk density of the film (ρ/ρo = 0.84) which facilitates the process of intercalation/de-intercalation of protons and electrons. These results show good promise toward stable and efficient crystalline tungsten oxide based electrochromic device applications.

  14. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Gong, Haibo; Freudenberg, Norman; Nie, Man; van de Krol, Roel; Ellmer, Klaus

    2016-04-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  15. () preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique

    NASA Astrophysics Data System (ADS)

    Bürgi, Juan; García Molleja, Javier; Bolmaro, Raúl; Piccoli, Mattia; Bemporad, Edoardo; Craievich, Aldo; Feugeas, Jorge

    2016-04-01

    Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconductor industry. However, the AlN crystalline structure plays a crucial role in its performance. In this paper, polycrystalline AlN films have been grown onto Si(1 1 1) and Si(1 0 0) (with an oxide native coverage of SiO2) wafers by RSM (reactive sputter magnetron) technique using a small (5 L) reactor. The development of polycrystalline AlN films with a good texture along () planes, i.e., semi-polar structure, was shown. Analyses were done using X-ray diffraction in the Bragg-Brentano mode and in the GIXRD (grazing incidence X-ray diffraction) one, and the texture was determined through pole figures. The structure and composition of these films were also studied by TEM and EDS techniques. Nevertheless, the mapping of the magnetic field between the magnetron and the substrate has shown a lack of symmetry at the region near the substrate. This lack of symmetry can be attributable to the small dimensions of the chamber, and the present paper suggests that this phenomenon is the responsible for the unusual () texture developed.

  16. Determination of ionization fraction and plasma potential in a dc magnetron sputtering system using a quartz crystal microbalance and a gridded energy analyzer

    SciTech Connect

    Green, K.M.

    1997-01-01

    A diagnostic which combines a quartz crystal microbalance and a gridded energy analyzer has been developed to measure the ion-to- neutral ratio and the plasma potential in a commercial dc magnetron sputtering device. Additional features of this sensor include an externally controlled shutter which protects the diagnostic when it is in the chamber, but it is not in use. The diagnostic is mounted on a linear motion feedthrough and embedded in a slot in the wafer chuck to allow for measuring uniformity in deposition and ionization throughout the plane of the wafer. RF power is introduced to ionize the Al particles. Using the quartz crystal microbalance and the gridded energy analyzer, the ion-to-neutral ratio and other parameters are determined. Comparing the total deposition rate with and without a bias that screens out the ions, but leaves the plasma undisturbed, allows for the determination of the ion-to-neutral ratio. By varying the voltage applied to the grids, the plasma potential is measured. For example, a magnetron configuration having a pressure of 35 mtorr, a dc power of 2 kW, and a net rf power of 310{+-}5 W yielded 78{+-}5% ionization and a plasma potential of 35{+-}1 V.

  17. Effects of pulse frequency on the microstructure, composition and optical properties of pulsed dc reactively sputtered vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Dong, Xiang; Wu, Zhiming; Jiang, Yadong; Xu, Xiangdong; Yu, He; Gu, Deen; Wang, Tao

    2014-09-01

    Vanadium oxide (VOx) thin films were prepared on unheated glass substrate by pulsed dc reactive magnetron sputtering using different pulse frequency. Field emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) measurements were made on the deposited VOx films to characterize the microstructure, composition and optical properties, respectively. It was found that under the same discharge power and argon-oxygen atmosphere, with the increase of pulse frequency, the vertical column-like structure in the films will gradually disappear and the ratio of high-valent VOx to low-valent VOx will obviously elevate. Optical parameters of the VOx films have been obtained by fitting the ellipsometric data (Ψ andΔ) using the Tauc-Lorentz dispersion relation and a multilayer model (air/roughness layer/VOx/glass). The results demonstrated that pulse frequency plays a critical role in determining the transmittance, refractive index, extinction coefficient and optical band gap etc. The correlations between the microstructure, composition, optical properties and pulse frequency are also given by our experiment results. And the mechanisms for the evolution of the microstructure, composition and optical properties with pulse frequency have been discussed. Overall, due to the pulse frequency had a great effect not only on the growth characteristics but also on the optical properties of the VOx films, thus through variation of the pulse frequency during deposition which provide a convenient and efficient approach to control and optimize the performances of the VOx films.

  18. Development of mid-frequency AC reactive magnetron sputtering for fast deposition of Y2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Xiong, Jie; Xia, Yudong; Xue, Yan; Zhang, Fei; Guo, Pei; Zhao, Xiaohui; Tao, Bowan

    2014-02-01

    A reel-to-reel magnetron sputtering system with mid-frequency alternating current (AC) power supply was used to deposit double-sided Y2O3 seed layer on biaxially textured Ni-5 at.%W tape for YBa2Cu3O7-δ coated conductors. A reactive sputtering process was carried out using two opposite symmetrical sputtering guns with metallic yttrium targets and water vapor for oxidizing the sputtered metallic atoms. The voltage control mode of the power supply was used and the influence of the cathode voltage and ArH2 pressure were systematically investigated. Subsequently yttrium-stabilized zirconia (YSZ) barrier and CeO2 cap layers were deposited on the Y2O3 buffered substrates in sequence, indicating high quality and uniform double-sided structure and surface morphology of such the architecture.

  19. Reactive magnetron sputtering of Cu{sub 2}O: Dependence on oxygen pressure and interface formation with indium tin oxide

    SciTech Connect

    Deuermeier, Jonas; Gassmann, Juergen; Broetz, Joachim; Klein, Andreas

    2011-06-01

    Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu{sub 2}O) are identified. In addition, the interface formation between Cu{sub 2}O and Sn-doped In{sub 2}O{sub 3} (ITO) was studied by stepwise deposition of Cu{sub 2}O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset {Delta}E{sub VB} 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu{sub 2}O/n-ITO junctions, which have been investigated for thin film solar cells.

  20. Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Stein, Adrian; Keudell, Achim von; Nahif, Farwah; Schneider, Jochen M.

    2013-09-21

    Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.

  1. Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

    SciTech Connect

    Valcheva, E.; Birch, J.; Persson, P. O. A ring .; Tungasmita, S.; Hultman, L.

    2006-12-15

    Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)(parallel sign)Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15 deg. with respect to each other: AlN<1120>(parallel sign)Si[110], AlN<0110>(parallel sign)Si[110], AlN<1120>(parallel sign)Si[100], and AlN<0110>(parallel sign)Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed.

  2. Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2011-06-01

    Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.

  3. A study of structure and properties of Ti-doped DLC film by reactive magnetron sputtering with ion implantation

    NASA Astrophysics Data System (ADS)

    Ma, Guojia; Gong, Shuili; Lin, Guoqiang; Zhang, Lin; Sun, Gang

    2012-01-01

    Ti-doped diamond-like carbon (DLC) films were prepared on Ti alloys by reactive magnetron sputtering combined with PSII technology. The structure and properties of unmodified and Ti-doped DLC films were analyzed in a systematic way by different testing, such as TEM, XPS, frictional wear testing, contact angle measurement and so on. The results showed that Ti-doped DLC was a typical a-C:H film containing TiC nanometer grains, whose mechanical properties were obviously improved, such as hardness, wear resistance and cohesive strength, still kept good wear resistance at the ambient temperature of 450 °C, and held a rather large mean water contact angle of 104.2 ± 1°.

  4. Structural parameters and polarization properties of TiN thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Solovan, M. M.; Brus, V. V.; Pidkamin, L. J.; Maryanchuk, P. D.; Dobrovolsky, Yu. G.

    2015-11-01

    We report the results of the investigation of morphological, structural, optical and plarimeteric properties of titanium nitride thin films deposited on silicon and glass substrates. The magnetron sputtered titanium nitride thin films were established to possess crystalline structure with the average grain size about D = 15 nm. The method of correlation matrix is was applied for the analysis of polarization properties of scattered light by the titanium nitride thin film. The obtained experimental result, can be explained by the presence of the effects of linear and circular dichroism in the material of the titanium nitride thin films under investigations.

  5. Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering

    SciTech Connect

    Zhang, X.L.; Hui, K.N.; Hui, K.S.; Singh, Jai

    2013-03-15

    Highlights: ► High-quality ZnO thin films were deposited at room temperature. ► Effect of O{sub 2} flow and RF sputtering voltages on properties of ZnO films were studied. ► O{sub 2}/Ar ratios played a key role in controlling optical properties of ZnO films. ► Photoluminescence intensity of the ZnO films strongly depended on O{sub 2}/Ar ratios. ► Crystallite size, stress and strain strongly depended on O{sub 2}/Ar ratios. - Abstract: ZnO thin films were deposited onto quartz substrates by radio frequency (RF) reactive magnetron sputtering using a Zn target. The structural and optical properties of the ZnO thin films were investigated comprehensively by X-ray diffraction (XRD), ultraviolet–visible and photoluminescence (PL) measurements. The effects of the oxygen content of the total oxygen–argon mixture and sputtering voltage in the sputtering process on the structural and optical properties of the ZnO films were studied systemically. The microstructural parameters, such as the lattice constant, crystallite size, stress and strain, were also calculated and correlated with the structural and optical properties of the ZnO films. In addition, the results showed that the crystalline quality of ZnO thin films improved with increasing O{sub 2}/Ar gas flow ratio from 2:8 to 8:2. XRD and PL spectroscopy revealed 800 V to be the most appropriate sputtering voltage for ZnO thin film growth. High-quality ZnO films with a good crystalline structure, tunable optical band gap as well as high transmittance could be fabricated easily by RF reactive magnetron sputtering, paving the way to obtaining cost-effective ZnO thin films transparent conducting oxides for optoelectronics applications.

  6. Effects of an unbalanced magnetron in a unique dual-cathode, high rate reactive sputtering system

    NASA Technical Reports Server (NTRS)

    Rohde, S. L.; Petrov, I.; Sproul, W. D.; Barnett, S. A.; Rudnik, P. J.; Graham, M. E.

    1990-01-01

    Simple plasma and magnetic field measurements are presented to illustrate the opportunities afforded by using unbalanced magnetrons in a dual-cathode system. The system employs a pair of opposed cathodes, 38 cm x 13 cm, placed 27.5 cm apart, to coat specimens mounted on a rotational substrate holder. Comparisons are drawn between the original 'balanced' magnetron and several unbalanced configurations in terms of field strengths, deposition rates, etching characteristics, and substrate ion current densities for the growth of TiN films. The effects of 'unbalancing' on the nature of the plasma within the 3D geometry of the deposition chamber are elucidated via plasma probe and magnetic field studies performed under a variety of conditions. All the unbalanced configurations examined provided enhanced ion bombardment at the surface of the growing film. The closed-field or opposed magnet geometry resulted in a threefold or greater increase in current density when compared with that obtained using the corresponding mirrored geometry under the same conditions.

  7. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    NASA Astrophysics Data System (ADS)

    Shimizu, T.; Villamayor, M.; Lundin, D.; Helmersson, U.

    2016-02-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar-N2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf-N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail.

  8. Obtaining Au thin films in atmosphere of reactive nitrogen through magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Quintero, J. H.; Ospina, R.; Mello, A.

    2016-02-01

    4d and 5d series of the transition metals are used to the obtaining nitrides metallic, due to the synthesis of PtN, AgN and AuN in the last years. Different nitrides are obtained in the Plasma Assisted Physics Vapour Deposition system, due to its ionization energy which is necessary for their formation. In this paper a Magnetron Sputtering system was used to obtain Au thin films on Si wafers in Nitrogen atmosphere. The substrate temperature was varied between 500 to 950°C. The samples obtained at high temperatures (>500°C) show Au, Si and N elements, as it is corroborated in the narrow spectrum obtained for X-Ray Photoelectron Spectroscopy; besides the competition of orientation crystallographic texture between (111) and (311) directions was present in the X-Ray Diffraction analysis to the sample heated at 950°C.

  9. Structure and Properties of Ti-O-N Coatings Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Konischev, M. E.; Kuzmin, O. S.; Pustovalova, A. A.; Morozova, N. S.; Evdokimov, K. E.; Surmenev, R. A.; Pichugin, V. F.; Epple, M.

    2014-02-01

    Results of an experimental study of the optical characteristics of gas discharges are presented. The study was aimed at optimizing the operating modes of a mid-frequency magnetron sputtering system to efficiently deposit Ti-O-N coatings. The conditions for maintaining the intensity of the chosen spectroscopic lines that ensure synthesis of titanium oxide and titanium oxynitride coatings have been revealed. The morphology, structure, contact angle, and free surface energy of titanium oxide and titanium oxynitride coatings on type 12Kh18N10T stainless steel substrates were examined by using scanning and transmission electron microscopy and infrared spectroscopy, and by measuring the wetting angle. The results of examination of the structure and properties of the synthesized films and their physicomechanical and optical characteristics are given.

  10. Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

    SciTech Connect

    Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz; Jensen, Jens; Hultman, Lars

    2013-01-15

    The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inert gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.

  11. Effect of oxygen incorporation on structural and properties of Ti-Si-N nanocomposite coatings deposited by reactive unbalanced magnetron sputtering

    SciTech Connect

    Ding, X.Z.; Zeng, X.T.; Liu, Y.C.; Zhao, L.R.

    2006-07-15

    Ti-Si-N-O nanocomposite coatings with different contents of oxygen were deposited by a combined dc/rf reactive unbalanced magnetron sputtering process in an Ar+N{sub 2}+O{sub 2} mixture atmosphere. The composition, structure, mechanical, and tribological properties of the as-deposited coatings were analyzed by energy dispersive analysis of x-rays, x-ray diffraction (XRD), nanoindentation, and pin-on-disk tribometer experiments, respectively. It was found that in the range of lower oxygen content with atomic ratio of O/N{<=}0.72, the tribological properties of the Ti-Si-N-O coatings are evidently improved, in comparison with the coating without oxygen incorporation. At O/N=0.72, the friction coefficient and wear rate of the as-deposited coatings are reduced to 20% and 45%, respectively. Meanwhile, however, their hardness was not reduced, but, on the contrary, slightly increased. With increasing oxygen content further to O/N{>=}0.72, coating hardness decreased significantly. The friction coefficient of the as-deposited coatings decreased monotonously with the increase of oxygen content in the whole composition range investigated. The wear rate of the coatings exhibited a minimum value at around O/N=0.72. In the lower range of O/N, wear rate decreased significantly due to the lubricant effect of oxygen incorporation, while in the higher range of O/N, wear rate increased gradually due to the weakening of coating hardness. XRD patterns revealed that the as-deposited coatings were mainly crystallized in cubic TiN phase, accompanied with minority of rutile structure titania in the case of higher oxygen incorporation.

  12. Electron beam induced coloration and luminescence in layered structure of WO{sub 3} thin films grown by pulsed dc magnetron sputtering

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-06-01

    Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO{sub 3} film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device.

  13. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance.

    PubMed

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K; Daniels, Stephen; Hopkins, M B

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system. PMID:27131678

  14. Measurement of deposition rate and ion energy distribution in a pulsed dc magnetron sputtering system using a retarding field analyzer with embedded quartz crystal microbalance

    NASA Astrophysics Data System (ADS)

    Sharma, Shailesh; Gahan, David; Scullin, Paul; Doyle, James; Lennon, Jj; Vijayaraghavan, Rajani K.; Daniels, Stephen; Hopkins, M. B.

    2016-04-01

    A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.

  15. High rate deposition of photocatalytic TiO{sub 2} films by dc magnetron sputtering using a TiO{sub 2-x} target

    SciTech Connect

    Sato, Yasushi; Uebayashi, Akira; Ito, Norihiro; Kamiyama, Toshihisa; Shigesato, Yuzo

    2008-07-15

    Photocatalytic TiO{sub 2} films were deposited on glass substrates by dc magnetron sputtering using a slightly reduced TiO{sub 2-x} target (2-x=1.986; conductivity, 3.7 S cm{sup -1}; density, 4.21 g/cm{sup 3}). The variation in the deposition rate as a function of the O{sub 2} flow ratio did not show a hysteresis curve at the 'transition region' as seen in the case of a Ti metal target. The deposition rate using the TiO{sub 2-x} target in 100% Ar gas was approximately seven times higher than that using the Ti metal target in an 'oxide mode'. The films postannealed in air at temperatures {>=}200 deg. C showed excellent photodecomposition characteristics of acetaldehyde (CH{sub 3}CHO) as well as photoinduced hydrophilicity.

  16. Optical properties and surface morphology of Li-doped ZnO thin films deposited on different substrates by DC magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Mohamed, Galal A.; Mohamed, El-Maghraby; Abu El-Fadl, A.

    2001-12-01

    Thin films of zinc oxide doped with Zn 1- xLi xO with x=0.2 (ZnO : Li), have been prepared on sapphire, MgO and quartz substrates by DC magnetron sputtering method at 5 mTorr. The substrate temperatures were fixed to about 573 K. We have measured the transmission and reflection spectra and determined the absorption coefficient, optical band-gap ( Egdopt), the high frequency dielectric constant ε‧ ∞ and the carrier concentration N for the as-prepared films at room temperature. The films show direct allowed optical transitions with Egdopt values of 3.38, 3.43 and 3.29 eV for films deposited on sapphire, MgO and quartz substrates, respectively. The dependence of the obtained results on the substrate type are discussed.

  17. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Szymańska, Magdalena; Gierałtowska, Sylwia; Wachnicki, Łukasz; Grobelny, Marcin; Makowska, Katarzyna; Mroczyński, Robert

    2014-05-01

    The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O2 flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfOx and HfOxNy layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal-insulator-semiconductor (MIS) structures with HfOx or HfOxNy gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS).

  18. A parametric model for reactive high-power impulse magnetron sputtering of films

    NASA Astrophysics Data System (ADS)

    Kozák, Tomáš; Vlček, Jaroslav

    2016-02-01

    We present a time-dependent parametric model for reactive HiPIMS deposition of films. Specific features of HiPIMS discharges and a possible increase in the density of the reactive gas in front of the reactive gas inlets placed between the target and the substrate are considered in the model. The model makes it possible to calculate the compound fractions in two target layers and in one substrate layer, and the deposition rate of films at fixed partial pressures of the reactive and inert gas. A simplified relation for the deposition rate of films prepared using a reactive HiPIMS is presented. We used the model to simulate controlled reactive HiPIMS depositions of stoichiometric \\text{Zr}{{\\text{O}}2} films, which were recently carried out in our laboratories with two different configurations of the {{\\text{O}}2} inlets in front of the sputtered target. The repetition frequency was 500 Hz at the deposition-averaged target power densities of 5 Wcm-2and 50 Wcm-2 with a pulse-averaged target power density up to 2 kWcm-2. The pulse durations were 50 μs and 200 μs. Our model calculations show that the to-substrate {{\\text{O}}2} inlet provides systematically lower compound fractions in the target surface layer and higher compound fractions in the substrate surface layer, compared with the to-target {{\\text{O}}2} inlet. The low compound fractions in the target surface layer (being approximately 10% at the deposition-averaged target power density of 50 Wcm-2 and the pulse duration of 200 μs) result in high deposition rates of the films produced, which are in agreement with experimental values.

  19. Stress related anisotropy studies in DC-magnetron sputtered TbCo and TbFe films

    SciTech Connect

    Cheng, S.C.N.; Kryder, M.H.; Mathur, M.C.A. )

    1989-09-01

    A series of TbCo films and a series of TbFe films were prepared by de-magnetron sputtering at different deposition powers and Ar sputtering pressures. It was found that anisotropy decreased with an increase of deposition power. The authors discuss how anisotropy showed a peak within the range of 2.5 mtorr to 11.5 mtorr of Ar sputtering pressures. The perpendicular magnetic anisotropy of films which were still attached to their substrates and films which had been removed from their substrates were compared. The percentage change in K/sub u/, which occurred when the film was removed from its substrate, correlated with the rise and fall of perpendicular anisotropy, although changes were also typically large at 2.5 mtorr of Ar sputtering pressure. Changes in K/sub u/ after removal from the substrate were as large as 46% in TbFe films deposited at 2.5 mtorr of Ar sputtering pressure. Larger percentage changes in K/sub u/ was found in de-magnetron sputtered films than were previously reported for rf-sputtered TbFe and TbCo films. The films deposited onto thick polycarbonate substrates had the largest anisotropy and also suffered the largest percentage change in anisotropy when they were removed from the substrate.

  20. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties

    SciTech Connect

    Borges, Joel Vaz, Filipe; Marques, Luis; Martin, Nicolas

    2014-03-15

    In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtaining different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.

  1. Role of carbon in the formation of hard Ge1-xCx thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hu, Chaoquan; Qiao, Liang; Tian, Hongwei; Lu, Xianyi; Jiang, Qing; Zheng, Weitao

    2011-07-01

    We have deposited germanium carbide (Ge1-xCx) films on Si(1 0 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH4/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp3 C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp3 C-Ge bonds in the film gradually reduces, while that of sp3 C-H and graphite-like sp2 C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17

  2. Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Haixia; Ding, Jijun; Ma, Shuyi

    2011-02-01

    Pure and Ti-doped zinc oxide (TZO) films are deposited using radio frequency (RF) reactive magnetron sputtering at different RF powers. Micro-structural and optical properties in doped ZnO films are systematically investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electronic microscopy (SEM), and a fluorescence spectrophotometer. The results indicate that ZnO films show stronger preferred orientation toward the c-axis and smoother surface roughness after Ti doping. As for TZO films, the full width at half maxima (FWHM) of (002) diffraction peaks decreased first and then increased, reaching a minimum of about 0.92° at 150 W, while the residual compressive stress of the TZO film prepared at 150 W became the largest. The photoluminescent (PL) spectra measured at room temperature reveal a violet, a blue and two green emissions. Intense violet and blue-green luminescence is obtained for the sample deposited at higher RF power. The origin of these emissions is discussed.

  3. Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Ligang; Ma, Shuyi; Chen, Haixia; Ai, Xiaoqian; Huang, Xinli

    2011-09-01

    Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.

  4. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  5. In situ deposition of PbTiO3 thin films by direct current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Iljinas, Aleksandras; Marcinauskas, Liutauras; Stankus, Vytautas

    2016-09-01

    The lead titanate thin films were deposited using in situ layer-by-layer reactive magnetron sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO2/Si) substrates at 450-600 °C temperatures using Ti2O seed layer. The influence of the substrate temperature on the surface morphology, phase composition, and electrical properties of PbTiO3 films were investigated. Experimental results demonstrated that the deposition at higher substrate temperatures resulted in the formation of films with the lower surface roughness values. The increase of the substrate temperature has no effect on the tetragonality value of the films. The preferential orientation in the films was changed and the crystallites size slightly increased with the increased substrate temperature from 450 °C to 550 °C. Hysteresis measurements show that the films exhibit ferroelectric properties with a maximum coercive field of Ec = 150 kV/cm and of Pr = 60 μC/cm2. Coercive field dependence on the frequency measurements indicated that the creep regime of domain wall motions dominated till 1 kHz of frequency.

  6. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  7. SiNx Coatings Deposited by Reactive High Power Impulse Magnetron Sputtering: Process Parameters Influencing the Nitrogen Content.

    PubMed

    Schmidt, Susann; Hänninen, Tuomas; Goyenola, Cecilia; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Goebbels, Nico; Tobler, Markus; Högberg, Hans

    2016-08-10

    Reactive high power impulse magnetron sputtering (rHiPIMS) was used to deposit silicon nitride (SiNx) coatings for biomedical applications. The SiNx growth and plasma characterization were conducted in an industrial coater, using Si targets and N2 as reactive gas. The effects of different N2-to-Ar flow ratios between 0 and 0.3, pulse frequencies, target power settings, and substrate temperatures on the discharge and the N content of SiNx coatings were investigated. Plasma ion mass spectrometry shows high amounts of ionized isotopes during the initial part of the pulse for discharges with low N2-to-Ar flow ratios of <0.16, while signals from ionized molecules rise with the N2-to-Ar flow ratio at the pulse end and during pulse-off times. Langmuir probe measurements show electron temperatures of 2-3 eV for nonreactive discharges and 5.0-6.6 eV for discharges in transition mode. The SiNx coatings were characterized with respect to their composition, chemical bond structure, density, and mechanical properties by X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction, and nanoindentation, respectively. The SiNx deposition processes and coating properties are mainly influenced by the N2-to-Ar flow ratio and thus by the N content in the SiNx films and to a lower extent by the HiPIMS frequencies and power settings as well as substrate temperatures. Increasing N2-to-Ar flow ratios lead to decreasing growth rates, while the N content, coating densities, residual stresses, and the hardness increase. These experimental findings were corroborated by density functional theory calculations of precursor species present during rHiPIMS. PMID:27414283

  8. The nanocrystalline structure of TiO2 film deposited by DC magnetron sputtering at room temperature

    NASA Astrophysics Data System (ADS)

    Liu, Jindong; Ding, Wanyu; Wang, Hualin; Liu, Shimin; Jiang, Weiwei; Liu, Chaoqian; Wang, Nan; Chai, Weiping

    2014-10-01

    At room temperature, titanium dioxide (TiO2) films were deposited by the direct current pulse magnetron sputtering technique. Varying O2/Ar flow ratio, TiO2 films with different nanocrystalline structures were obtained. The high resolution transmission electron microscopy results show that with O2/Ar = 6/14, the nanocrystalline in rutile phase appears in as-deposited film. Then X-ray diffraction patterns of annealed films revealed that with O2/Ar = 6/14, the higher weight fractions of rutile TiO2 appear in films. The optical emission spectroscopy results show that with O2/Ar < 6/14, O element was mainly existed as O-/O+ ions, instead of excited state of O atoms.

  9. Cross sectional TEM analysis of duplex HIPIMS and DC magnetron sputtered Mo and W doped carbon coatings

    NASA Astrophysics Data System (ADS)

    Sharp, J.; Castillo Muller, I.; Mandal, P.; Abbas, A.; West, G.; Rainforth, W. M.; Ehiasarian, A.; Hovsepian, P.

    2015-10-01

    A FIB lift-out sample was made from a wear-resistant carbon coating deposited by high power impulse magnetron sputtering (HIPIMS) with Mo and W. TEM analysis found columnar grains extending the whole ∼1800 nm thick film. Within the grains, the carbon was found to be organised into clusters showing some onion-like structure, with amorphous material between them; energy dispersive X-ray spectroscopy (EDS) found these clusters to be Mo- and W-rich in a later, thinner sample of the same material. Electron energy-loss spectroscopy (EELS) showed no difference in C-K edge, implying the bonding type to be the same in cluster and matrix. These clusters were arranged into stripes parallel to the film plane, of spacing 7-8 nm; there was a modulation in spacing between clusters within these stripes that produced a second, coarser set of striations of spacing ∼37 nm.

  10. Nanoparticles of gold on ?-A12O3 Produced by dc Magnetron Sputtering

    SciTech Connect

    Veith, Gabriel M; Lupini, Andrew R; Pennycook, Stephen J; Ownby, Gary Webb; Dudney, Nancy J

    2005-01-01

    This paper describes a one-step magnetron sputtering technique for the preparation of supported catalyst particles that has a number of advantages over existing methods. In order to demonstrate the effectiveness of this technique, a supported gold on {gamma}-Al{sub 2}O{sub 3} oxidation catalyst has been prepared. This catalyst is as active as catalysts prepared via traditional chemical methods for the oxidation of carbon monoxide (TOF 1.1 conversions/surface Au atom/second at 300 K and 16% CO/8% O{sub 2}/He). Aberration-corrected scanning transmission electron microscopy demonstrates that this technique produces gold nanoparticles in a size range that is claimed in the literature to be most active (about 2 nm).

  11. Composition, structure and properties of SiN x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Sun, H.; Wan, G. J.; Leng, Y. X.; Chen, J. Y.

    2005-11-01

    Silicon nitride (SiNx) thin films are of special interest in both scientific research and industrial applications due to their remarkable properties such as high thermal stability, chemical inertness, high hardness and good dielectric properties. In this work, SiNx films were fabricated by pulsed reactive closed-field unbalanced magnetron sputtering of high purity single crystal silicon targets in an Ar-N2 mixture. The effect of N2 partial pressure on the film composition, chemical bonding configurations, surface morphology, surface free energy, optical and mechanical properties were investigated. We showed that with increased N2 partial pressure, the N to Si ratio (N/Si) in the film increased and N atoms are preferentially incorporated in the NSi3 stoichiometric configuration. It leads the Si-N network a tendency to chemical order. Films deposited at a high N2 fraction were consistently N-rich. The film surface transformed from a loose granular structure with microporosity to a homogeneous, continuous, smooth and dense structure. A progressive densification of the film microstructure occurs as the N2 fraction is increased. The reduced surface roughness and the increased N incorporation in the film give rise to the increased contact angle with double-distilled water from 24° to 49.6°. To some extent, the SiNx films deposited by pulsed magnetron sputtering are hydrophilic in nature. The as-deposited SiNx films exhibit good optical transparency in the visible region and the optical band gap Eopt can be varied from 1.68 eV for a-Si to 3.62 eV for SiNx films, depending on the synthesis parameters. With the increase of the N/Si atomic ratio, wear resistance of the SiNx films was improved, a consequence of increased hardness and elastic modulus. The SiNx films have lower friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction, where the SiNx films experienced only fatigue wear.

  12. The structure, surface topography and mechanical properties of Si-C-N films fabricated by RF and DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Zhifeng; Wang, Yingjun; Du, Chang; Huang, Nan; Wang, Lin; Ning, Chengyun

    2011-12-01

    Silicon carbon nitride thin films were deposited on Co-Cr alloy under varying deposition conditions such as sputtering power and the partial pressure ratio of N2 to Ar by radio frequency and direct current magnetron sputtering techniques. The chemical bonding configurations, surface topography and hardness were characterized by means of X-ray photoelectron spectroscopy, atomic force microscopy and nano-indentation technique. The sputtering power exhibited important influence on the film composition, chemical bonding configurations and surface topography, the electro-negativity had primary effects on chemical bonding configurations at low sputtering power. A progressive densification of the film microstructure occurring with the carbon fraction was increased. The films prepared by RF magnetron sputtering, the relative content of the Si-N bond in the films increased with the sputtering power increased, and Si-C and Si-Si were easily detachable, and C-O, N-N and N-O on the film volatile by ion bombardment which takes place very frequently during the film formation process. With the increase of sputtering power, the films became smoother and with finer particle growth. The hardness varied between 6 GPa and 11.23 GPa depending on the partial pressure ratio of N2 to Ar. The tribological characterization of Co-Cr alloy with Si-C-N coating sliding against UHMWPE counter-surface in fetal bovine serum, shows that the wear resistance of the Si-C-N coated Co-Cr alloy/UHMWPE sliding pair show much favourable improvement over that of uncoated Co-Cr alloy/UHMWPE sliding pair. This study is important for the development of advanced coatings with tailored mechanical and tribological properties.

  13. High-rate reactive magnetron sputtering of zirconia films for laser optics applications

    NASA Astrophysics Data System (ADS)

    Juškevičius, K.; Audronis, M.; Subačius, A.; Drazdys, R.; Juškėnas, R.; Matthews, A.; Leyland, A.

    2014-09-01

    ZrO2 exhibits low optical absorption in the near-UV range and is one of the highest laser-induced damage threshold (LIDT) materials; it is, therefore, very attractive for laser optics applications. This paper reports explorations of reactive sputtering technology for deposition of ZrO2 films with low extinction coefficient k values in the UV spectrum region at low substrate temperature. A high deposition rate (64 % of the pure metal rate) process is obtained by employing active feedback reactive gas control which creates a stable and repeatable deposition processes in the transition region. Substrate heating at 200 °C was found to have no significant effect on the optical ZrO2 film properties. The addition of nitrogen to a closed-loop controlled process was found to have mostly negative effects in terms of deposition rate and optical properties. Open-loop O2 gas-regulated ZrO2 film deposition is slow and requires elevated (200 °C) substrate temperature or post-deposition annealing to reduce absorption losses. Refractive indices of the films were distributed in the range n = 2.05-2.20 at 1,000 nm and extinction coefficients were in the range k = 0.6 × 10-4 and 4.8 × 10-3 at 350 nm. X-ray diffraction analysis showed crystalline ZrO2 films consisted of monoclinic + tetragonal phases when produced in Ar/O2 atmosphere and monoclinic + rhombohedral or a single rhombohedral phase when produced in Ar/O2 + N2. Optical and physical properties of the ZrO2 layers produced in this study are suitable for high-power laser applications in the near-UV range.

  14. Microstructural, optical, and electrical properties of Ni–Al co-doped ZnO films prepared by DC magnetron sputtering

    SciTech Connect

    Jo, Young Dae; Hui, K.N.; Hui, K.S.; Cho, Y.R.; Kim, Kwang Ho

    2014-03-01

    Graphical abstract: - Highlights: • Ni–Al co-doped ZnO (NiAl:ZnO) composite thin films were deposited by DC magnetron sputtering at room temperature. • All films showed a highly preferential (0 0 2) c-axis orientation. • XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in the NiAl:ZnO films. • NiAl:ZnO (3 wt% Ni) film showed the lowest electrical resistivity of 2.59 × 10{sup −3} Ω cm. • Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni. - Abstract: Ni–Al co-doped ZnO (NiAl:ZnO) films with fixed Al content at 2 wt% and different Ni contents (2.5, 3, and 5 wt%) were deposited by DC magnetron sputtering in an argon atmosphere at room temperature. X-ray diffraction revealed that all films showed a highly preferential (0 0 2) c-axis orientation. XPS revealed the presence of metallic Ni, NiO, and Ni{sub 2}O{sub 3} states, and Ni atoms were successfully doped in NiAl:ZnO films, which did not result in a change in ZnO crystal structure and orientation. The electrical resistivity of NiAl:ZnO film was decreased to 2.59 × 10{sup −3} Ω cm at a Ni doping concentration of 3 wt% compared with undoped Al-doped ZnO film (5.58 × 10{sup −3} Ω cm). The mean optical transmittance in the visible range was greater than 80% for all films. Band gap widening (4.18 eV) was observed in the NiAl:ZnO films with 5 wt% Ni, attributed to the Burstein–Moss shift due to the increase of carrier concentration.

  15. Deposition and Characterization of Tungsten Carbide Thin Films by DC Magnetron Sputtering for Wear-Resistant Applications

    NASA Astrophysics Data System (ADS)

    Tavsanoglu, Tolga; Begum, Ceren; Alkan, Murat; Yucel, Onuralp

    2013-04-01

    In this study, WC (tungsten carbide) thin films were deposited on high-speed steel (AISI M2) and Si (100) substrates by direct current magnetron sputtering of a tungsten carbide target having 7% cobalt as binding material. The properties of the coatings have been modified by the change in the bias voltages from grounded to 200 V. All the coatings were deposited at 250°C constant temperature. The microstructure and the thickness of the films were determined from cross-sectional field-emission gun scanning electron microscope micrographs. The chemical composition of the film was determined by electron probe micro analyzer. The x-ray diffractometer has been used for the phase analyses. Nanoindentation and wear tests were used to determine the mechanical and tribological properties of the films, respectively. It is found that the increase in the bias voltages increased drastically the hardness and elastic modulus, decreased the friction coefficient values and increased the wear resistance of tungsten carbide thin films by a phase transformation from metallic W (tungsten) to a nonstoichiometric WC1- x (tungsten carbide) phase.

  16. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    NASA Technical Reports Server (NTRS)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  17. Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

    SciTech Connect

    Kuschel, Thomas; Keudell, Achim von

    2010-05-15

    Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with this microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.

  18. High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

    SciTech Connect

    Kupfer, H.; Kleinhempel, R.; Richter, F.; Peters, C.; Krause, U.; Kopte, T.; Cheng, Y.

    2006-01-15

    A reactive ac pulsed dual magnetron sputtering process for MgO thin-film deposition was equipped with a closed-loop control of the oxygen flow rate (F{sub O2}) using the 285 nm magnesium radiation as input. Owing to this control, most of the unstable part of the partial pressure versus flowrate curve became accessible. The process worked steadily and reproducible without arcing. A dynamic deposition rate of up to 35 nm m/min could be achieved, which was higher than in the oxide mode by about a factor of 18. Both process characteristics and film properties were investigated in this work in dependence on the oxygen flow, i.e., in dependence on the particular point within the transition region where the process is operated. The films had very low extinction coefficients (<5x10{sup -5}) and refractive indices close to the bulk value. They were nearly stoichiometric with a slight oxygen surplus (Mg/O=48/52) which was independent of the oxygen flow. X-ray diffraction revealed a prevailing (111) orientation. Provided that appropriate rf plasma etching was performed prior to deposition, no other than the (111) peak could be detected. The intensity of this peak increased with increasing F{sub O{sub 2}}, indicating an even more pronounced (111) texture. The ion-induced secondary electron emission coefficient (iSEEC) was distinctly correlated with the markedness of the (111) preferential orientation. Both refractive index and (111) preferred orientation (which determines the iSEEC) were found to be improved in comparison with the MgO growth in the fully oxide mode. Consequently, working in the transition mode is superior to the oxide mode not only with respect to the growth rate, but also to most important film properties.

  19. On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles.

    PubMed

    Godinho, V; Moskovkin, P; Álvarez, R; Caballero-Hernández, J; Schierholz, R; Bera, B; Demarche, J; Palmero, A; Fernández, A; Lucas, S

    2014-09-01

    The formation of the porous structure in dc magnetron sputtered amorphous silicon thin films at low temperatures is studied when using helium and/or argon as the processing gas. In each case, a-Si thin films were simultaneously grown at two different locations in the reactor which led to the assembly of different porous structures. The set of four fabricated samples has been analyzed at the microstructural level to elucidate the characteristics of the porous structure under the different deposition conditions. With the help of a growth model, we conclude that the chemical nature of the sputter gas not only affects the sputtering mechanism of Si atoms from the target and their subsequent transport in the gaseous/plasma phase towards the film, but also the pore formation mechanism and dynamics. When Ar is used, pores emerge as a direct result of the shadowing processes of Si atoms, in agreement with Thornton's structure zone model. The introduction of He produces, in addition to the shadowing effects, a new process where a degree of mobility results in the coarsening of small pores. Our results also highlight the influence of the composition of sputtering gas and tilt angles (for oblique angle deposition) on the formation of open and/or occluded porosity. PMID:25120129

  20. Effects of target angle on the properties of aluminum doped zinc oxide films prepared by DC magnetron sputtering for thin film solar cell applications.

    PubMed

    Park, Hyeongsik; Iftiquar, S M; Thuy, Trinh Than; Jang, Juyeon; Ahn, Shihyun; Kim, Sunbo; Lee, Jaehyeong; Jung, Junhee; Shin, Chonghoon; Kim, Minbum; Yi, Junsin

    2014-10-01

    An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of target angles on the structural and electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. The surface became more irregular with increasing the target angle due to larger grains. The self-surface textured morphology, which is a favorable property as front layer of solar cell, exhibited at target angle of 72.5 degrees. We obtained the films with various opto-electronic properties by controlling target angle from 32.5 degrees to 72.5 degrees. The spectral haze increased substantially with the target angle, whereas the electrical resistivity was increased. The conversion efficiency of amorphous silicon solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density and fill factor, compared to cell with relatively flat AZO films. PMID:25942853

  1. Structural and optical properties of Zn-doped SnO2 films prepared by DC and RF magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Xu, Bo; Ren, Xiao-Guang; Gu, Guang-Rui; Lan, Lei-Lei; Wu, Bao-Jia

    2016-01-01

    In the present work, the Zn-doped SnO2 (SnO2:Zn) thin films, with different Zn-doping concentration, were successfully prepared on Si (100) and glass substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The effects of dopant concentration, determined by the sputtering power applied on Zn target, on the structural, photoluminescent and optical performances of Zn-doped SnO2 films were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), energy dispersive X-ray (EDX),high-resolution transmission electron microscopy(HRTEM) and Ultraviolet-Visible-Near IR spectroscopy. The results show all these films exhibited excellent crystalline quality with tetragonal rutile structure. Two photoluminescence (PL) peaks related to Zn-doping were detected at about 351 nm (3.53 eV) and 369 nm (3.36 eV). Moreover, the average transmittance and the band gap energy of the films continuously decreased from 85% to 75% and from 3.52 eV to 3.34 eV, respectively, with the increase of the doping level. The excellent properties of Zn-doped SnO2 films make them capable for wider applications.

  2. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  3. Effect of Power and Nitrogen Content on the Deposition of CrN Films by Using Pulsed DC Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Umm-i-Kalsoom; R., Ahmad; Nisar, Ali; A. Khan, I.; Sehrish, Saleem; Uzma, Ikhlaq; Nasarullah, Khan

    2013-07-01

    CrN thin films are deposited on stainless steel (AISI-304) substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers (100 W to 200 W) in a mixture of argon (95%) and nitrogen (5%). The second set of samples is treated at different nitrogen concentrations (5% to 20%) in argon (95% to 80%) for a constant power (150 W). X-ray diffraction (XRD) analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN (111) plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy (SEM) analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy (AFM) scratch analysis. The maximum film thickness (about 755 nm) is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.

  4. Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Li, Xue-Yong; Li, Hong-Jian; Wang, Zhi-Jun; Xia, Hui; Xiong, Zhi-Yong; Wang, Jun-Xi; Yang, Bing-Chu

    2009-01-01

    ZnO and Al-doped ZnO(ZAO) thin films have been prepared on glass substrates by direct current (dc) magnetron sputtering from 99.99% pure Zn metallic and ZnO:3 wt%Al 2O 3 ceramic targets, the effects of substrate temperature on the crystallization behavior and optical properties of the films have been studied. It shows that the surface morphologies of ZAO films exhibit difference from that of ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (0 0 2). The optical transmittance and photoluminescence (PL) spectra of both ZnO and ZAO films are obviously influenced by the substrate temperature. All films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. More significantly, Al-doping leads to a larger optical band gap ( Eg) of the films. It is found from the PL measurement that near-band-edge (NBE) emission and deep-level (DL) emission are observed in pure ZnO thin films. However, when Al was doped into thin films, the DL emission of the thin films is depressed. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the Eg in optical transmittance measurement.

  5. Effect of N2/Ar on structure and hardness of TaN-Ag thin films deposited by DC cylindrical magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Foadi, Farnaz; Darabi, Elham; Reza Hantehzadeh, Mohammad

    2014-05-01

    TaN-Ag thin films were deposited on a 304 stainless steel substrate by cylindrical DC magnetron sputtering using different ratios of nitrogen to argon gas. The N2 percentages were 1.5%, 3%, 4.5%, 7.5%, 10.5% and 15% by volume. The influence of the N2/Ar ratio on the films morphology, structure and hardness was investigated using Atomic Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (GIXRD), and the nanoindentation method. The amounts of Ta and Ag were determined using Energy Dispersive X-ray Spectroscopy (EDS). The thickness of the deposited films was measured by surface step profilometer. The RMS surface roughness increased for N2 percentages up to 7.5% and then decreased. Grazing results showed different TaN phases and Ag crystalline structures. The hardness of all films was much higher than the hardness of bulk silver or tantalum. The highest hardness value was obtained for 1.5% N2 . The EDS results indicated that the Ag/Ta ratio in the deposited films increases with increasing the N2 amount from 1.5% to 15%. The size of Ag islands on the surface was maximized at 7.5% N2 in the gas mixture. The thicknesses of films were in the range of 400-600 nm.

  6. Titanium Aluminum Nitride Films Deposited by AC Reactive Magnetron Sputtering: Study of Positioning Effect in an Inverted Cylindrical Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Vandross, George Clinton, II

    TiAlN films were deposited on glass substrates by AC magnetron sputtering at 2 kW with constant Argon and Nitrogen gas flow rates to study the effects of positioning on the deposited films. The deposition system used was an ICM-10 IsoFlux cylindrical magnetron sputtering chamber. The samples were placed in different positions and tilts with respect to the location of the Titanium and Aluminum targets in the chamber. It was found that with change in position and application of tilts, deposited films acquired different physical and chemical properties. It is believed that the differences in these properties were caused by to the change in the incident angle of bombardment of the samples, and the change in surface areas of the samples presented to the targets at each location. As related to the physical traits of the samples, analysis using Scanning Electron Microscopy of the samples displayed variations in the topography, where differences in grain density could be noted as well as structure formations. The chemical properties were also noted to be affected by the variation of tilt and position applied to the sample. X-ray Diffraction Spectroscopy analysis of the samples showed the intensity of the TiAlN characteristic peak of the samples to differ from sample to sample. Results from the XRD analysis of this work showed a 157% and 176% increase in peak intensity of the 0° tilt sample of the Bottom Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. The results from the XRD analysis of this work also showed a 74% and 151% increase of the peak intensity for the 0° tilt sample of the Middle Plate when compared to the 45° tilt sample and 60° tilt sample respectively of the same plate. Whereas results for this work showed a 54% and 41% decrease in peak intensity of the 0° tilt sample of the Top Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. Energy Dispersive X-ray Spectroscopy was also performed

  7. Correlation between Microstructure and Mechanical Properties ofTiC Films Produced by Vacuum arc Deposition and Reactive MagnetronSputtering

    SciTech Connect

    Monteiro, O.R.; Delplancke-Ogletree, M.P.; Winand, R.; Brown, I.G.

    1999-07-29

    We have studied the synthesis of TiC films by vacuum arc deposition and reactive magnetron sputtering over a wide range of compositions. The films were deposited on silicon and tool steel. The films were characterized by various techniques: Auger electron and X-ray photoelectron spectroscopies, Rutherford backscattering, transmission electron diffraction and X-ray diffraction. Mechanical properties such as stress, adhesion, friction coefficient and wear resistance were obtained by carrying measurements of the curvature of the silicon substrate, pull tests, and ball-on-disk tests, respectively.

  8. Highly oriented {delta}-Bi{sub 2}O{sub 3} thin films stable at room temperature synthesized by reactive magnetron sputtering

    SciTech Connect

    Lunca Popa, P.; Kerdsongpanya, S.; Lu, J.; Eklund, P.; Sonderby, S.; Bonanos, N.

    2013-01-28

    We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of {delta}-Bi{sub 2}O{sub 3}. This phase is obtained at a substrate temperature of 150-200 Degree-Sign C in a narrow window of O{sub 2}/Ar ratio in the sputtering gas (18%-20%). Transmission electron microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 Degree-Sign C in vacuum and 350 Degree-Sign C in ambient air.

  9. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  10. Growth and characterization of TiAlN/CrAlN superlattices prepared by reactive direct current magnetron sputtering

    SciTech Connect

    Barshilia, Harish C.; Deepthi, B.; Rajam, K. S.; Bhatti, Kanwal Preet; Chaudhary, Sujeet

    2009-01-15

    TiAlN and CrAlN coatings were prepared using a reactive direct current magnetron sputtering system from TiAl and CrAl targets. Structural characterization of the coatings using x-ray diffraction (XRD) revealed the B1 NaCl structure of TiAlN and CrAlN coatings with a prominent reflection along the (111) plane. The XPS data confirmed the bonding structures of TiAlN and CrAlN single layer coatings. Subsequently, nanolayered multilayer coatings of TiAlN/CrAlN were deposited on silicon and mild steel (MS) substrates at different modulation wavelengths ({lambda}) with a total thickness of approximately 1.0 {mu}m. The modulation wavelengths were calculated from the x-ray reflectivity data using modified Bragg's law. TiAlN/CrAlN multilayer coatings were textured along (111) for {lambda}<200 A and the XRD patterns showed the formation of superlattice structure for coatings deposited at {lambda}=102 A. The x-ray reflectivity data showed reflections of fifth and seventh orders for multilayer coatings deposited at {lambda}=102 and 138 A, respectively, indicating the formation of sharp interfaces between TiAlN and CrAlN layers. The cross-sectional scanning electron microscopy image of TiAlN/CrAlN multilayer coatings indicated a noncolumnar and dense microstructure. A maximum hardness of 39 GPa was observed for TiAlN/CrAlN multilayer coatings deposited at {lambda}=93 A, which was higher than the rule-of-mixture value (30 GPa) for TiAlN and CrAlN. Study of thermal stability of the coatings in air using micro-Raman spectroscopy indicated that the TiAlN/CrAlN multilayer coatings were stable up to 900 deg. C in air. TiAlN/CrAlN multilayer coatings also exhibited improved corrosion resistance when compared to the MS substrate.

  11. Studies on the room temperature growth of nanoanatase phase TiO{sub 2} thin films by pulsed dc magnetron with oxygen as sputter gas

    SciTech Connect

    Karuppasamy, A.; Subrahmanyam, A.

    2007-03-15

    The anatase phase titanium dioxide (TiO{sub 2}) thin films were deposited at room temperature by pulsed dc magnetron sputtering using pure oxygen as sputter gas. The structural, optical, electrical, and electrochromic properties of the films have been studied as a function of oxygen pressure in the chamber. The x-ray diffraction results indicate that the films grown above 4.5x10{sup -2} mbar are nanocrystalline (grain size of 28-43 nm) with anatase phase. The films deposited at the chamber pressure of 7.2x10{sup -2} mbar are found to be highly crystalline with a direct optical band gap of 3.40 eV, refractive index of 2.54 (at {lambda}=400 nm), and work function of 4.77 eV (determined by the Kelvin probe measurements). From the optical emission spectra of the plasma and transport of ions in matter calculations, we find that the crystallization of TiO{sub 2} at room temperature is due to the impingement of electrons and ions on the growing films. Particularly, the negative oxygen ions reflected from the target by 'negative ion effects' and the enhanced density of TiO, TiO{sup +}, TiO{sub 2}{sup +}, and O{sup 2+} particles in the plasma are found to improve the crystallization even at a relatively low temperature. From an application point of view, the film grown at 7.2x10{sup -2} mbar was studied for its electrochromic properties by protonic intercalation. It showed good electrochromic behavior with an optical modulation of {approx}45%, coloration efficiency of 14.7 cm{sup 2} C{sup -1}, and switching time (t{sub c}) of 50 s for a 2x2 cm{sup 2} device at {lambda}=633 nm.

  12. Optical properties of nanocrystalline WO{sub 3} and WO{sub 3-x} thin films prepared by DC magnetron sputtering

    SciTech Connect

    Johansson, Malin B. Niklasson, Gunnar A.; Österlund, Lars; Zietz, Burkhard

    2014-06-07

    The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, with different oxygen vacancy (V{sub o}) concentration, have been studied by spectrophotometry and photoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the films exhibit similar band gap energies, E{sub g} ≈ 2.9 eV. The absorption spectra of the films show two pronounced absorption bands in the near-infrared region. One peak (P1) is located at approximately 0.7 eV, independent of V{sub o} concentration. A second peak (P2) shifts from 0.96 eV to 1.16 eV with decreasing V{sub o} concentration. Peak P1 is assigned to polaron absorption due to transitions between tungsten sites (W{sup 5+} → W{sup 6+}), or an optical transition from a neutral vacancy state to the conduction band, V{sub o}{sup 0} → W{sup 6+}. The origin of peak P2 is more uncertain but may involve +1 and +2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to 3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films. The low energy emission bands agree well with calculated optical transition energies of oxygen vacancy sites, with dominant contribution from neutral and singly charged vacancies in the less sub-stoichiometric films, and additional contributions from doubly charged vacancy sites in the more sub-stoichiometric films.

  13. TiO2 thin films with rutile phase prepared by DC magnetron co-sputtering at room temperature: Effect of Cu incorporation

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Li, Yujie; Ba, Xin; Huang, Lin; Yu, Ying

    2015-08-01

    The thin films for pure TiO2 and that incorporated with Cu ion were deposited by DC magnetron co-sputtering with Ar gas. The crystal texture, surface morphology, energy gap and optical properties of the prepared films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectrometer (XPS), UV-vis spectrophotometer, and Raman spectroscopy. The results show that as-deposited TiO2 film mainly possesses anatase structure at room temperature with pure Ar gas, but the introduction of Cu can alter the phase structure of crystallite TiO2. XRD patterns and Raman spectra indicate that the Cu incorporation with high concentration (ACu/ATi + ACu ≈ 20%) favors the formation of rutile phase. Moreover, the Cu incorporation into TiO2 lattice induces band gap narrowing. Band structures and density of states have been analyzed based on density functional theory (DFT) and periodic models in order to investigate the influence of the Cu incorporation on the electronic structure of TiO2. Both experimental data and electronic structure calculations evidence the fact that the change in film structure from the anatase to the rutile phase can be ascribed to the possible incorporation of Cu1+ in the sites previously occupied by Ti4+, and the presence of Cu results in important effect on the electronic states, which is mainly related to the 3d Cu orbitals in the gap and in the vicinity of the valence band edges for TiO2.

  14. Spectroscopy analysis of graphene like deposition using DC unbalanced magnetron sputtering on γ‐Al{sub 2}O{sub 3} buffer layer

    SciTech Connect

    Aji, A. S. Darma, Y.

    2014-02-24

    In this work, graphene-like deposition using DC unbalanced magnetron-sputtering technique on γ‐Al{sub 2}O{sub 3} layer at low temperature has been systematically studied. The γ‐Al{sub 2}O{sub 3} was growth on silicon substrate using thermal evaporation of Al wire and continuing with dry oxidation of Al at 550 °C. Sputtering process were carried out using Fe-doped carbon pellet as a target by maintain the chamber pressure of 4.6×10{sup −2} Torr at substrate temperature of 300 °C for time deposition range of 1 to 4 hours. The quality of Al{sub 2}O{sub 3} on Si(100) and the characteristic of carbon thin film on γ‐Al{sub 2}O{sub 3} were analized by mean XRD, opctical microscopy, EDAX, FTIR, and Raman spectra. XRD and optical microscopy analysis shows that Al{sub 2}O{sub 3} film is growth uniformly on Si substrate and forming the γ phase of Al{sub 2}O{sub 3}. Raman and FTIR spectra confirm the formation of graphene like carbon layer on Al{sub 2}O{sub 3}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by XRD spectra. The quality and the number of graphene layers are investigated by using Raman spectra peaks analysis.

  15. Reactive magnetron sputtering of highly (001)-textured WS2-x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growth

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Seeger, S.; Sieber, I.; Bohne, W.; Röhrich, J.; Strub, E.; Mientus, R.

    2006-02-01

    Tungsten disulfide WS2 is a layer-type semi-conductor with an energy band gap and an absorption coefficient making it suitable as an absorber for thin film solar cells. In the article [1] WS2-x films were pre-pared by reactive magnetron sputtering from a metallic tungsten target in Ar-H2S atmospheres.The cover figure shows in situ energy-dispersive X-ray diffraction patterns for films deposited at different substrate potentials, i.e. for deposition conditions with ion assistance at different ion energies. These spectra and the corresponding SEM photographs of the film morphology show the strong influence of the ion energy on the film growth. The crystallographic struc-ture of WS2-x is shown between the two SEM pictures.The first author, Klaus Ellmer, is working at the Hahn-Meitner-Institut Berlin, Dept. of Solar Energy Research. His research fields are thin film deposition by reactive magnetron sputtering for solar cells, plasma characterization, in situ energy-dispersive X-ray diffraction and electronic transport in transpar-ent conductive oxides.

  16. Compositional, morphological and mechanical investigations of monolayer type coatings obtained by standard and reactive magnetron sputtering from Ti, TiB2 and WC

    NASA Astrophysics Data System (ADS)

    Jinga, V.; Mateescu, A. O.; Cristea, D.; Mateescu, G.; Burducea, I.; Ionescu, C.; Crăciun, L. S.; Ghiuţă, I.; Samoilă, C.; Ursuţiu, D.; Munteanu, D.

    2015-12-01

    The purpose of this work was to study new composite coatings that would have wear resistant properties. The coatings were obtained by standard and reactive simultaneous magnetron sputtering from three targets (Ti, TiB2, WC) with or without N2 as reactive gas. The chemical composition of the coatings was investigated by Rutherford backscattering spectrometry, while the morphological features were evaluated by atomic force microscopy. Some of the mechanical properties of the coatings, such as hardness and Young's modulus, were investigated by nanoindentation, while the adherence to the substrate was investigated by scratch tests. The wear resistance and friction coefficients were evaluated using a pin-on-disk tribometer. The films are hard (Hit between 20 and 22 GPa) and show promising results concerning their wear resistance, especially if the films would be paired with an appropriate substrate material.

  17. [Effect of oxygen partial pressure on the band-gap of the TiO2 films prepared by DC reactive sputtering].

    PubMed

    Zhao, Qing-nan; Li, Chun-ling; Liu, Bao-shun; Zhao, Xiu-jian

    2004-05-01

    TiO2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10 to 0.65 Pa. The photoluminescence (PL) spectra of the films were recorded. The results of the PL spectra showed that there were three emission peaks at 370, 472 and 514 nm for the films sputtered at 0.35 and 0.65 Pa, and there were two peaks at 370 and 490 nm for the films sputtered at 0.10 and 0.15 Pa. The band-gap for the films was 3.35 eV. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63 and 2.41 eV, corresponding to 0.72 and 0.94 eV below conduction band for the band-gap, respectively. For the films sputtered at 0.10 and 0.15 Pa, there was an energy band formed between 3.12 and 2.06 eV, corresponding to 0.23 and 1.29 eV below the conduction band. With increasing the oxygen partial pressure, the defect energy band changed to two energy levels, and the energy levels nearly disappeared for the film sputtered at 0.65 Pa of oxygen partial pressure. PMID:15769058

  18. Investigation on the electrical properties and inhomogeneous distribution of ZnO:Al thin films prepared by dc magnetron sputtering at low deposition temperature

    SciTech Connect

    Zhang, X. B.; Pei, Z. L.; Gong, J.; Sun, C.

    2007-01-01

    A study of the electrical properties and spatial distribution of the ZnO:Al (AZO) thin films prepared by dc magnetron sputtering at low deposition temperature was presented, with emphasis on the origin of the resistivity inhomogeneity across the substrate. Various growth conditions were obtained by manipulating the growth temperature T{sub S}, total pressure P{sub T}, and ion-to-neutral ratio J{sub i}/J{sub n}. The plasma characteristics such as radial ion density and floating/plasma potential distribution over the substrate were measured by Langmuir probe, while the flux and energy distribution of energetic species were estimated through Monte Carlo simulations. The crystalline, stress and electrical properties of the films were found to be strongly dependent on T{sub S} and J{sub i}/J{sub n}. Under the low J{sub i}/J{sub n} (<0.3) conditions, the T{sub S} exerted a remarkable influence on film quality. The films prepared at 90 deg. C were highly compressed, exhibiting poor electrical properties and significant spatial distribution. High quality films with low stress and resistivity were produced at higher T{sub S} (200 deg. C). Similarly, at lower T{sub S} (90 deg. C), higher J{sub i}/J{sub n} ({approx}2) dramatically improved the film resistivity as well as its lateral distribution. Moreover, it indicated that the role of ion bombardment is dependent on the mechanism of dissipation of incident species. Ion bombardment is beneficial to the film growth if the energy of incident species E{sub i} is below the penetration threshold E{sub pet} ({approx}33 eV for ZnO); on the other hand, the energy subimplant mechanism would work, and the bombardment degrades the film quality when E{sub i} is over the E{sub pet}. The energetic bombardment of negative oxygen ions rather than the positives dominated the resistivity distribution of AZO films, while the nonuniform distribution of active oxygen played a secondary role which was otherwise more notable under conditions of

  19. Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, Michal; Kaczmarek, Danuta; Prociow, Eugeniusz; Domaradzki, Jaroslaw; Wojcieszak, Damian; Bocheński, Jakub

    2014-09-01

    In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10-2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

  20. Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, Michal; Kaczmarek, Danuta; Prociow, Eugeniusz; Domaradzki, Jaroslaw; Wojcieszak, Damian; Bocheński, Jakub

    2014-06-01

    In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10-2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

  1. Comparative study of RF reactive magnetron sputtering and sol-gel deposition of UV induced superhydrophilic TiOx thin films

    NASA Astrophysics Data System (ADS)

    Vrakatseli, V. E.; Amanatides, E.; Mataras, D.

    2016-03-01

    TiOx and TiOx-like thin films were deposited on PEEK (Polyether ether ketone) substrates by low-temperature RF reactive magnetron sputtering and the sol-gel method. The resulting films were compared in terms of their properties and photoinduced hydrophilicity. Both techniques resulted in uniform films with good adhesion that can be switched to superhydrophilic after exposure to UVA radiation for similar time periods. In addition, the sputtered films can also be activated and switched to superhydrophilic by natural sunlight due to the higher absorption in the visible spectrum compared to the sol-gel films. On the other hand, the as deposited sol-films remain relatively hydrophilic for a longer time in dark compared to the sputtered film due to the differences in the morphology and the porosity of the two materials. Thus, depending on the application, either method can be used in order to achieve the desirable TiOx properties.

  2. Thermal Stability of a RuO2 Electrode Prepared by DC Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Matsui, Yuichi; Hiratani, Masahiko; Kimura, Shinichiro

    2000-01-01

    RuO2 films were deposited by reactive DC sputtering, and the formation process and the thermal stability were investigated. In the RuO2/Ti/SiO2 structure, the Ti surface was preferentially oxidized at the initial stage of RuO2 growth. Insertion of Ru and TiN layers between the RuO2 and Ti layers can suppress the oxygen diffusion toward the Ti layer during the film growth. However, when the RuO2/Ru/TiN/Ti/Si structure was heat-treated, the RuO2 was partially reduced to form RuO2-X and the TiN was oxidized to TiO2 while generating N2 and O2 gases, resulting in voids formation at the RuO2/Ru interface, regardless of the heat-treatment atmosphere. We found this was caused by internal oxygen diffusion within the stacked layers. This reaction is governed by the transference of oxygen to the TiN and Ti layers by the difference in the Gibbs’ formation free energy, and by the oxygen diffusion enhancement.

  3. Pulsed DC reactively sputtered tantalum oxide thin films for embedded capacitors

    NASA Astrophysics Data System (ADS)

    Jain, Pushkar

    Embedded capacitor technology, where thin film capacitors are integrated at on-chip and/or off-chip levels, offers high packaging densities and improved electrical performance at potentially reduced costs of capacitor fabrication and integration. This research explores and establishes the leverages of using thin film embedded capacitors over currently used surface mount discrete capacitors. In particular, this thesis focuses on developing pulsed dc reactively sputtered tantalum oxide (Ta2O5) thin film capacitors to be integrated into established interconnect technologies of IC chips and packages. A correlation between electrical breakdown field and dielectric constant, EBR (MV/cm) = (20/ 3r ) is empirically determined and used to establish a design space for breakdown voltage and capacitance density of planar capacitors, with film thickness and material dielectric constant as parameters. This design space sets the limits for "best one can achieve" (BOCA) breakdown voltages and capacitance densities using a particular dielectric. The validity of the developed design space is experimentally verified with Ta2O 5 thin films over a wide range of film thickness (0.05 to 5.4 mum). High frequency test vehicles were designed and fabricated to evaluate the electrical performance of Ta2O5, SiO 2, and Si3N4 thin film capacitors over a wide range of frequencies (dc to 20 GHz). Ta2O5, SiO 2, and Si3N4 show no dispersion at least up to 20 GHz. The total inductance of power connect vias is determined to be less than 50 pH/mum of via, which is at least two orders of magnitude lower than most discrete capacitors along with connection leads (>4 nH). The extent of Cu diffusion/drift into Ta2O5 films is determined and compared with Al, Ta, and Ti at various biasing and temperature conditions using bias-temperature-stress (BTS) and triangular voltage sweep (TVS) techniques. No Cu diffusion was detected at 150°C at least till 0.75 MV/cm. (Abstract shortened by UMI.)

  4. Reduction of the Residual DC in the Photoaligned Twisted Nematic Liquid Crystal Display Using Polymerized Reactive Mesogen

    NASA Astrophysics Data System (ADS)

    Lim, Young Jin; Jeong, Il Hwa; Kang, Heon-Seok; Kundu, Sudarshan; Lee, Myong-Hoon; Lee, Seung Hee

    2012-08-01

    A residual direct current (DC) voltage property in the twisted nematic liquid crystal display (TN-LCD) using photoaligned polyimide is studied by the capacitance-voltage hysteresis method. A residual DC is greatly reduced in the photoaligned cell with an additional polymerized layer on a photoaligned layer with the help of a UV-curable reactive mesogen. The surface of the photoaligned layer becomes much more polar than that of the rubbed layer, possibly leading to a larger trapping of ions on the photoaligned layer than on the rubbed polyimide layer. The polar surface can be modified with an additional proposed polymer layer and, thus, the low residual DC voltage can be achieved.

  5. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  6. Preparation of hydrogenated diamond-like carbon films by reactive Ar/CH4 high power impulse magnetron sputtering with negative pulse voltage

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2015-09-01

    High power impulse magnetron sputtering (HiPIMS) has been attracted, because sputtered target species are highly ionized. High densities of active species such as radical ions and neutral radicals can be also achieved owing to high density reactive HiPIMS plasmas. We investigate properties of hydrogenated diamond-like carbon films prepared by reactive HiPIMS of Ar/CH4 gas mixture. The properties of the films strongly depend on the plasma compositions and the kinetic energy of the carbon-containing ions which can enter into the films. The film preparation is performed at an average power of 60 W and a repetition frequency of 110 Hz, changing CH4 fraction up to 15%. Total pressure ranges between 0.3 and 2 Pa. The maximum of instantaneous power is about 20-25 kW, and the magnitude of the current is 36 A. A negative pulse voltage is applied to the substrates for about 10 μs after the target voltage changed from about -600 V to 0 V. The structural properties are characterized by Raman spectroscopy and nano-indentation method. Film hardness strongly depends on the magnitude of negative pulse voltage. By adjusting the magnitude of negative voltage, the film hardness ranges between about 10 and 22 GPa. This work is partially supported by JSPS KAKENHI Grant Number 26420230.

  7. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

    SciTech Connect

    Tsai, T. K.; Chen, H. C.; Lee, J. H.; Huang, Y. Y.; Fang, J. S.

    2010-05-15

    Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.

  8. Effect of electric field in the course of obtaining a-SiO{sub x}:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

    SciTech Connect

    Undalov, Yu. K. Terukov, E. I.; Gusev, O. B.; Lebedev, V. M.; Trapeznikova, I. N.

    2008-11-15

    The effect of electric field on the elemental composition and photoluminescence of films of amorphous hydrogenated silicon doped with erbium and oxygen (a-SiO{sub x}:H(Er, O)) in the course of obtaining these films by dc magnetron sputtering is studied. Two series of films were studied in relation to the electric-field strength in the magnetron, the area of the metallic erbium target, and oxygen content in the working chamber. The first series of films was obtained using an electrically insulated substrate holder, and the second series was obtained with a positive potential at the substrate holder with respect to the cathode. It is shown that, although the character of variation in the elemental composition and photoluminescence intensity for erbium Er{sup 3+} ions differ appreciably in the films of the two series, both of these factors are determined, as a result, by the processes of sputtering oxidation of the Si and Er targets that represent the cathode.

  9. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  10. Influence of working gas pressure on structure and properties of WO3 films reactively deposited by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takahashi, T.; Tanabe, J.; Yamada, N.; Nakabayashi, H.

    2003-07-01

    Tungsten trioxide (WO3) films with thickness of 0.9-6.7 μm have been deposited on glass-slide substrates, using rf magnetron sputtering in an atmosphere of mixture 80% Ar and 20% O2. The as-deposited films had a dark metallic color, like the W target, at a working gas pressure PW of 1 mTorr. Yellow films resulted at a PW of 3 mTorr. With a further increase of PW, the film color changed to pale yellow. From the x-ray diffraction patterns, the as-deposited films were polycrystalline crystallizing in the monoclinic crystal structure with high c-axis orientation perpendicular to the film plane. The optical transmittance of the films deposited at a PW of 1 mTorr is nearly zero. However, the transmittance of the films deposited at other PW are larger than 70% in the wavelength, λ, ranging from 500 to 900 nm. With decreasing λ to 400 nm, the transmittance decreases steeply to zero. The λ at this absorption edge is longer than that in TiO2 and comes in the visible region. The surface morphology of the films depends on PW. This different morphology may be attributed to the effect of the substrate heating by plasma emission because of the high plasma density at higher PW. The morphology of the films may also depend on the crystallinity of the WO3 films. As PW increased, the surfaces of the films became rougher but the grain sizes of the films did not always become larger. The WO3 films deposited in this study may be used for the underlayer of TiO2 photocatalyst.

  11. Laser induced fluorescence measurements of ion velocity in a DC magnetron microdischarge with self-organized drift wave modes propagating in the direction opposite the E x B electron drift velocity

    NASA Astrophysics Data System (ADS)

    Young, Chris; Gascon, Nicolas; Lucca Fabris, Andrea; Cappelli, Mark; Ito, Tsuyohito; Stanford Plasma Physics Laboratory Collaboration; Osaka University CenterAtomic; Molecular Technologies Collaboration

    2015-09-01

    Evidence is presented of rotating azimuthal wave structures in a planar DC magnetron microdischarge operating in argon and xenon. Plasma emission captured using a high frame rate camera reveals waves of varying azimuthal modes propagating in the negative E x B direction. The dominant stable mode structure depends on discharge voltage. The negative drift direction is attributed to a local field reversal arising from strong density gradients that drive excess ions towards the anode. The transition between modes is shown to be consistent with models of gradient drift-wave dispersion in the presence of such a field reversal when the fluid representation includes ambipolar diffusion along the direction parallel to the magnetic field. Time-average and time-synchronized laser induced fluorescence measurements are carried out to elucidate the anode-bound ion dynamics driven by the field reversal. This research is supported by the Air Force Office of Scientific Research.

  12. Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2016-04-01

    Diamond-like carbon films were prepared using a reactive Ar/CH4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp3/(C-C sp2 + C-C sp3) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.

  13. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Gall, D.; Petrov, I.; Desjardins, P.; Greene, J. E.

    1999-11-01

    ScN layers, 60-80 nm thick, were grown at 800 °C on 220-nm-thick epitaxial TiN(001) buffer layers on MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition in pure N2 discharges. The films are stoichiometric with N/Sc ratios, determined by Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy, of 1.00±0.02. Plan-view and cross-sectional transmission electron microscopy analyses showed that the films are single crystals which appear defect free up to a critical thickness of ≃15 nm, above which an array of nanopipes form with their tubular axis along the film growth direction and extending to the free surface. The nanopipes are rectangular in cross section with areas of ≃1.5×5 nm2 and are self-organized along <100>, directions with an average separation of ≃40 nm. Their formation is the result of periodic kinetic surface roughening which leads to atomic self-shadowing and, under limited adatom mobility conditions, to deep cusps which are the origin of the nanopipes. The ScN layers are nearly relaxed, as determined from x-ray diffraction θ-2θ scans in both reflection and transmission, with only a small residual compressive strain due to differential thermal contraction. The Poisson ratio of ScN was found to be 0.20±0.04, in good agreement with ab initio calculations.

  14. Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Kannan, R.; Loganathan, S.

    2014-05-01

    Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300 V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.

  15. Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

    NASA Astrophysics Data System (ADS)

    Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Jacq, S.; Traoré-Mantion, S.; Sharaiha, A.

    2015-03-01

    In the search for new dielectric and ferroelectric compounds, we were interested in the perovskite (Sr1-xLax)2(Ta1-xTix)2O7 solid solution with ferroelectric end members Sr2Ta2O7 (TCurie=-107 °C) and La2Ti2O7 (TCurie=1461 °C). In order to achieve a Curie temperature close to room temperature, the formulation with x=0.01 was chosen and synthetized as thin films by reactive radio-frequency magnetron sputtering. In oxygen rich plasma, a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 film is deposited, characterized by a band-gap Eg=4.75 eV and an (1 1 0) epitaxial growth on (0 0 1)MgO substrate. The use of nitrogen rich plasma allows to synthesize (Sr0.99La0.01)(Ta0.99Ti0.01)O2N oxynitride films, with band gap Eg~2.10 eV and a polycrystalline, textured or epitaxial growth on (0 0 1)MgO substrate. Nitrogen-substoichiometric oxynitride films with larger lattice cells are produced for low dinitrogen percentages in the sputtering plasma.

  16. Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Mei, A. B.; Wilson, R. B.; Li, D.; Cahill, David G.; Rockett, A.; Birch, J.; Hultman, L.; Greene, J. E.; Petrov, I.

    2014-06-01

    Elastic constants are determined for single-crystal stoichiometric NaCl-structure VN(001), VN(011), and VN(111) epitaxial layers grown by magnetically unbalanced reactive magnetron sputter deposition on 001-, 011-, and 111-oriented MgO substrates at 430 °C. The relaxed lattice parameter ao = 0.4134 ± 0.0004 nm, obtained from high-resolution reciprocal space maps, and the mass density ρ = 6.1 g/cm3, determined from the combination of Rutherford backscattering spectroscopy and film thickness measurements, of the VN layers are both in good agreement with reported values for bulk crystals. Sub-picosecond ultrasonic optical pump/probe techniques are used to generate and detect VN longitudinal sound waves with measured velocities v001 = 9.8 ± 0.3, v011 = 9.1 ± 0.3, and v111 = 9.1 ± 0.3 km/s. The VN c11 elastic constant is determined from the sound wave velocity measurements as 585 ± 30 GPa; the c44 elastic constant, 126 ± 3 GPa, is obtained from surface acoustic wave measurements. From the combination of c11, c44, vhkl, and ρ we obtain the VN c12 elastic constant 178 ± 33 GPa, the VN elastic anisotropy A = 0.62, the isotropic Poisson ratio ν = 0.29, and the anisotropic Poisson ratios ν001 = 0.23, ν011 = 0.30, and ν111 = 0.29.

  17. Understanding of gas phase deposition of reactive magnetron sputtered TiO2 thin films and its correlation with bactericidal efficiency

    NASA Astrophysics Data System (ADS)

    Panda, A. B.; Mahapatra, S. K.; Barhai, P. K.; Das, A. K.; Banerjee, I.

    2012-10-01

    Nanostructured TiO2 thin films were deposited using RF reactive magnetron sputtering at different O2 flow rates (20, 30, 50 and 60 sccm) and constant RF power of 200 W. In situ investigation of the nucleation and growth of the films was made by Optical Emission Spectroscopy (OES). The nano amorphous nature as revealed from X-ray diffraction (XRD) of the as deposited films and abundance of the Ti3+ surface oxidation states and surface hydroxyl group (OH-) in the films deposited at 50 sccm as determined from X-ray photo electron spectroscopy (XPS) was explained on the basis of emission spectra studies. The increase in band gap and decrease in particle size with O2 flow rate was observed from transmission spectra of UV-vis spectroscopy. Photoinduced hydrophilicity has been studied using Optical Contact Angle (OCA) measurement. The post irradiated films showed improved hydrophilicity. The bactericidal efficiency of these films was investigated taking Escherichia coli as model bacteria. The films deposited at 50 sccm shows better bactericidal activity as revealed from the optical density (OD) measurement. The qualitative analysis of the bactericidal efficiency was depicted from Scanning Electron Microscope images. A correlation between bactericidal efficiency and the deposited film has been established and explained on the basis of nucleation growth, band gap and hydrophilicity of the films.

  18. Transmission photocathodes based on stainless steel mesh and quartz glass coated with N-doped DLC thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Arbet, J.

    2016-03-01

    The influence was investigated of N-doped diamond-like carbon (DLC) films properties on the quantum efficiency of a prepared transmission photocathode. N-doped DLC thin films were deposited on a silicon substrate, a stainless steel mesh and quartz glass (coated with 5 nm thick Cr adhesion film) by reactive magnetron sputtering using a carbon target and gas mixture Ar, 90%N2+10%H2. The elements' concentration in the films was determined by RBS and ERD. The quantum efficiency was calculated from the measured laser energy and the measured cathode charge. For the study of the vectorial photoelectric effect, the quartz type photocathode was irradiated by intensive laser pulses to form pin-holes in the DLC film. The quantum efficiency (QE), calculated at a laser energy of 0.4 mJ, rose as the nitrogen concentration in the DLC films was increased and rose dramatically after the micron-size perforation in the quartz type photocathodes.

  19. Influence of substrate bias on practical adhesion, toughness, and roughness of reactive dc-sputtered zirconium nitride films

    NASA Astrophysics Data System (ADS)

    Chen, Cheng-Shi; Liu, Chuan-Pu; Yang, Heng-Ghieh; Tsao, C.-Y. A.

    2004-09-01

    The ZrN films were grown on Si (100) substrates using dc magnetron sputtering where the substrate bias was varied from -45 to 50 V. In this article, the film/substrate practical adhesion of the ZrN films were measured by scratch testing while the hardness, elastic modulus, and fracture toughness were measured by nanoindentation. The structures and morphologies of the ZrN films were analyzed using scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results indicate that the introduction of either negative or positive bias results in the degradation of the practical adhesion properties, while the films under zero bias exhibit the best adhesion. In addition, positive bias results in the increase in both the hardness and elastic modulus, while negative bias enhances the hardness and toughness of the ZrN thin films. The mechanical properties are greatly influenced by substrate bias and can be correlated to microstructure variations. The detailed mechanisms accounted for these phenomena are discussed.

  20. Preparation of nitrogen-substituted TiO2 thin film photocatalysts by the radio frequency magnetron sputtering deposition method and their photocatalytic reactivity under visible light irradiation.

    PubMed

    Kitano, Masaaki; Funatsu, Keisho; Matsuoka, Masaya; Ueshima, Michio; Anpo, Masakazu

    2006-12-21

    Nitrogen-substituted TiO2 (N-TiO2) thin film photocatalysts have been prepared by a radio frequency magnetron sputtering (RF-MS) deposition method using a N2/Ar mixture sputtering gas. The effect of the concentration of substituted nitrogen on the characteristics of the N-TiO2 thin films was investigated by UV-vis absorption spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) analyses. The absorption band of the N-TiO2 thin film was found to shift smoothly to visible light regions up to 550 nm, its extent depending on the concentration of nitrogen substituted within the TiO2 lattice in a range of 2.0-16.5%. The N-TiO2 thin film photocatalyst with a nitrogen concentration of 6.0% exhibited the highest reactivity for the photocatalytic oxidation of 2-propanol diluted in water even under visible (lambda > or = 450 nm) or solar light irradiation. Moreover, N-TiO2 thin film photocatalysts prepared on conducting glass electrodes showed anodic photocurrents attributed to the photooxidation of water under visible light, its extent depending on wavelengths up to 550 nm. The absorbed photon to current conversion efficiencies reached 25.2% and 22.4% under UV (lambda = 360 nm) and visible light (lambda = 420 nm), respectively. UV-vis and photoelectrochemical investigations also confirmed that these thin films remain thermodynamically and mechanically stable even under heat treatment at 673 K. In addition, XPS and XRD studies revealed that a significantly high substitution of the lattice O atoms of the TiO2 with the N atoms plays a crucial role in the band gap narrowing of the TiO2 thin films, enabling them to absorb and operate under visible light irradiation as a highly reactive, effective photocatalyst. PMID:17165971

  1. Protection effect of ZrO2 coating layer on LiCoO2 thin film fabricated by DC magnetron sputtering.

    PubMed

    Noh, Jung-Pil; Jung, Ki-Taek; Jang, Min-Sun; Kwon, Tae-Hoon; Cho, Gyu-Bong; Kim, Ki-Won; Nam, Tae-Hyun

    2013-10-01

    Bare and ZrO2-coated LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 substrates. Deposited both films have a well-crystallized structure with (003) preferred orientation after annealing at 600 degrees C. The ZrO2-coated LiCoO2 thin film provide significantly improved cycling stability compared to bare LiCoO2 thin film at high cut-off potential (3.0-4.5 V). The improvement in electrochemical stability is attributed to the structural stability by ZrO2 coating layer. PMID:24245215

  2. Flow cytometric assessment of the reactivity of a panel of monoclonal antibodies (mAb) against two populations of human dendritic cells (DC)

    PubMed Central

    Nunez, Rafael; Filgueira, Luis

    2001-01-01

    Background The identification of antigens on human DC has been a very difficult and elusive task because of the lack of appropriate reagents. Therefore, we evaluated by flow cytometry a panel of mAb that recognize antigens on human DC, aiming to determine the kinetics of DC antigen expression at 7, 14, 21 and 28 days in (i) Dermal DC like cells (Mo-DC) and (ii) Langerhans cell like DC (Mo-LC). In addition we aimed to identify markers for DC subpopulations. Results It was found at day 7, that mAb BG6, HP-F1, BU10, RFD-1, CMRF-44 recognized <20% of Mo-DC. In contrast, 7H5, ZM3.8, CDlb/c, 55K-2, MMR1.16, MMR190.BB3 and L25 reacted with >50% of Mo-DC. Moreover, 7H5, ZM3.8, CMRF-56, CDlb/c, 55K-2, MMR1.16, MMR190.BB3 and L25 showed increased MFI reactivity against Mo-DC. mAb BG6, BU10 and CMRF-44 recognized <20% Mo-LC while RFD-1 reacted with 21% of Mo-LC. In contrast, HP-F1 showed 87% of Mo-LC positive. Also, 7H5, ZM3.8, RFD-7, MR15-2, CDlb/c, 55K-2, MMR1.16, MMR190.BB3 and L25 reacted with >50% of Mo-LC. The increase in % of positive cells was paralleled by MFI increases. At day 14, fourteen mAb recognized >50% of the Mo-DC, while five recognized 20-50% of Mo-DC. BG6 reacted with 7% of the Mo-DC. Nineteen mAb recognized >48% of Mo-LC while BG6 had negative reactivity. At day 21 and 28, all mAb reacted with >20% of Mo-DC and yielded a significant MFI with Mo-DC. Also nineteen mAb yielded significant MFI with Mo-LC while RFD-7 did not. Conclusions The immunophenotyping assays demonstrated differences between the two DC populations as well as variations in the reactivity of the mAb at diverse time points, suggesting the existence of subpopulations within the Mo-DC and Mo-LC. PMID:11504561

  3. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  4. Spatial distribution of electrical properties for Al-doped ZnO films deposited by dc magnetron sputtering using various inert gases

    SciTech Connect

    Sato, Yasushi; Ishihara, Keita; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Spatial distribution of electrical properties of Al-doped ZnO (AZO) films deposited by magnetron sputtering was investigated. To adjust the intensity of bombardment by high-energy particles, the AZO films were deposited using Ar, Kr, or Xe gas with varying plasma impedance. The spatial distribution of the electrical properties clearly depends on the sputtering gas. In the case of using Kr or Xe, the resistivity of the films in front of the target center and erosion areas was significantly enhanced, in contrast with Ar. This was attributed to an enhancement in bombardment damage due to the increased sputtering voltages required for Kr or Xe discharges. The increase in plasma impedance was due to the smaller coefficients for secondary-electron emission of the target surface by Kr or Xe impingements, which leads to the larger sputtering voltage.

  5. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy.

    PubMed

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-29

    Catalystless growth of InxAl(1-x)N core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl(1-x)N nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl(1-x)N film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl(1-x)N is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl(1-x)N[0001]//Si[111] and InxAl(1-x)N[1120]//Si[110 by removing the native SiOx layer from the substrate. PMID:25944838

  6. Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

    SciTech Connect

    Nie, Man Ellmer, Klaus

    2014-02-28

    Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). All 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.

  7. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-01

    Catalystless growth of InxAl1-xN core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl1-xN nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl1-xN film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl1-xN is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl1-xN[0001]//Si[111] and InxAl1-xN[11\\bar{2}0]//Si[1\\bar{1}0] by removing the native SiOx layer from the substrate.

  8. Mechanical, tribological, and electrochemical behavior of Cr 1- xAl xN coatings deposited by r.f. reactive magnetron co-sputtering method

    NASA Astrophysics Data System (ADS)

    Sanchéz, J. E.; Sanchéz, O. M.; Ipaz, L.; Aperador, W.; Caicedo, J. C.; Amaya, C.; Landaverde, M. A. Hernández; Beltran, F. Espinoza; Muñoz-Saldaña, J.; Zambrano, G.

    2010-02-01

    Chromium aluminum nitride (Cr 1- xAl xN) coatings were deposited onto AISI H13 steel and silicon substrates by r.f. reactive magnetron co-sputtering in (Ar/N 2) gas mixture from chromium and aluminum targets. Properties of deposited Cr 1- xAl xN coatings such as compositional, structural, morphological, electrochemical, mechanical and tribological, were investigated as functions of aluminum content. X-ray diffraction patterns of Cr 1- xAl xN coatings with different atomic concentrations of aluminum (0.51 < x < 0.69) showed the presence and evolution of (1 1 1), (2 0 0), and (1 0 2) crystallographic orientations associated to the Cr 1- xAl xN cubic and w-AlN phases, respectively. The rate of corrosion of the steel coated with Cr 1- xAl xN varied with the applied power; however, always being clearly lower when compared to the uncoated substrate. The behavior of the protective effect of the Cr 1- xAl xN coatings is based on the substitution of Cr for Al, when the power applied to the aluminum target increases. The mechanical properties were also sensitive to the power applied, leading to a maximum in hardness and a reduced elastic modulus of 30 and 303 GPa at 350 W and a monotonic decrease to 11 and 212 GPa at 450 W, respectively. Finally, the friction coefficient measured by pin-on disk revealed values between 0.45 and 0.70 in humid atmosphere.

  9. Effects of substrate bias on the preferred orientation, phase transition and mechanical properties for NbN films grown by direct current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wen, M.; Hu, C. Q.; Wang, C.; An, T.; Su, Y. D.; Meng, Q. N.; Zheng, W. T.

    2008-07-01

    NbN films are deposited using direct current reactive magnetron sputtering in discharge of a mixture of N2 and Ar gas, and the effects of substrate bias (Vb) on the preferred orientation, phase transition, and mechanical properties for NbN films are explored by x-ray diffraction, selective area electron diffraction, and nanoindentation measurements. It is found that Vb has a significant influence on the stress in NbN films, leading to a pronounced change in the preferred orientation, phase structure, and hardness. As the substrate is at voltage floating, the stress is tensile. In contrast, as negative Vb is applied, the stress becomes compressive, and increases with increasing the absolute value of negative Vb. It is observed that a phase transition from δ (face-centered cubic) to δ' (hexagonal) for NbN films occurs as Vb is in the range of -80to-120V, which can be attributed to a decrease in the strain energy for NbN films. In order to explore the relationship between the stress and phase transition as well as preferred orientation, density-functional theory based on first principles is used to calculate the elastic constants and shear modulus for NbN with a structure of δ or δ'. The calculated results show that the shear modulus for δ'-NbN is larger than that for δ-NbN, whereas the bulk modulus for δ'-NbN is almost equal to that for δ-NbN, resulting in a difference in hardness for δ- or δ'-NbN single crystal.

  10. Nanocomposite Ti/hydrocarbon plasma polymer films from reactive magnetron sputtering as growth support for osteoblast-like and endothelial cells.

    PubMed

    Grinevich, Andrey; Bacakova, Lucie; Choukourov, Andrei; Boldyryeva, Hanna; Pihosh, Yuriy; Slavinska, Danka; Noskova, Lenka; Skuciova, Maria; Lisa, Vera; Biederman, Hynek

    2009-03-15

    Nanocomposite Ti/hydrocarbon plasma polymer (Ti/ppCH) films were deposited by DC magnetron sputtering of titanium target in n-hexane, argon, or a mixture of these two gases. The resultant films were heterogeneous, with inorganic regions of nanometer scale distributed within a plasma polymer matrix. The titanium content was controlled by adjusting the argon/n-hexane ratio in the working gas. In the pure n-hexane atmosphere, the Ti concentration was found to be below 1 at %, whereas in pure argon it reached 20 at %, as measured by Rutherford backscattering spectroscopy and elastic recoil detection analysis (RBS/ERDA). A high level of titanium oxidation is detected with TiO(2), substoichiometric titania, and titanium carbide, composing an inorganic phase of the composite films. In addition, high hydrogen content is detected in films rich with titanium. Ti-deficient and Ti-rich films proved equally good substrates for adhesion and growth of cultured human osteoblast-like MG 63 cells. In these cells, the population densities on days 1, 3, and 7 after seeding, spreading area on day 1, formation of talin-containing focal adhesion plaques as well as concentrations of talin and osteocalcin (per mg of protein) were comparable to the values obtained in cells on the reference cell culture materials, represented by microscopic glass coverslips or a polystyrene dish. An interesting finding was made when the Ti/ppCH films were seeded with calf pulmonary artery endothelial cells of the line CPAE. The cell population densities, the spreading area and also the concentration of von Willebrand factor, a marker of endothelial cell maturation, were significantly higher on Ti-rich than on Ti-deficient films. On Ti-rich films, these parameters were also higher or similar in comparison with the reference cell culture materials. Thus, both types of films could be used for coating bone implants, of which the Ti-rich film remains effective in enhancing the endothelialization of blood

  11. Experimental radiation cooled magnetrons for space

    NASA Technical Reports Server (NTRS)

    Brown, W. C.; Pollock, M.

    1991-01-01

    The heat disposal problem that occurs in the microwave generator of the Solar Power Satellite when it converts dc power from solar photovoltaic arrays into microwave power for transmission to earth is examined. A theoretical study is made of the radiation cooling of a magnetron directional amplifier, and some experimental data obtained from the QKH 2244 magnetron are presented. This instrument is an unpackaged microwave oven magnetron to which an anodized aluminum radiator has been attached and whose magnetic field is supplied by special samarium cobalt magnets.

  12. Experimental radiation cooled magnetrons for space

    NASA Astrophysics Data System (ADS)

    Brown, W. C.; Pollock, M.

    The heat disposal problem that occurs in the microwave generator of the Solar Power Satellite when it converts dc power from solar photovoltaic arrays into microwave power for transmission to earth is examined. A theoretical study is made of the radiation cooling of a magnetron directional amplifier, and some experimental data obtained from the QKH 2244 magnetron are presented. This instrument is an unpackaged microwave oven magnetron to which an anodized aluminum radiator has been attached and whose magnetic field is supplied by special samarium cobalt magnets.

  13. The effects of substrate and annealing on structural and electrochemical properties in LiCoO2 thin films prepared by DC magnetron sputtering.

    PubMed

    Noh, Jung Pil; Jung, Ki Taek; Cho, Gyu Bong; Lee, Sang Hun; Kim, Ki Won; Nam, Tae Hyun

    2012-07-01

    LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode. PMID:22966684

  14. Fiber texturing in nano-crystalline TiO2 thin films deposited at 150 °C by dc-reactive sputtering on fiber-textured [0 0 0 1] ZnO : Al substrates

    NASA Astrophysics Data System (ADS)

    Pellegrino, Giovanna; Bongiorno, Corrado; Ravesi, Sebastiano; Alberti, Alessandra

    2012-09-01

    TiO2 thin films were deposited at an effective surface temperature of 150 °C by dc-reactive magnetron sputtering on ZnO : Al oriented substrates having a fiber texture along the [0 0 0 1] axis, and studied by transmission electron microscopy and x-ray diffraction analyses. The substrate texturing was used to tailor the TiO2 structure in such a way that a porous matrix made of anatase nano-grains (10 nm in diameter) is formed instead of an amorphous layer (as observed at 150 °C on glass). Additionally, we demonstrate that, by adding an ex situ 200 °C annealing, the anatase domains also gain a fiber texture with the axes aligned to that of the substrate. The TiO2/AZO structural coupling is expected to play a crucial role for the carrier transport through the interface as required in dye-sensitized solar cells. Moreover, the low temperatures used render the process compatible with commonly used plastics substrates.

  15. Microstructure, Mechanical, and Scratch Resistance Properties of TiAlCrNbN-Graded Composite Coating Deposited on AISI H13 Steel Substrate with Pulsed DC Closed Field Unbalanced Magnetron Sputtering Method

    NASA Astrophysics Data System (ADS)

    Kara, Levent; Küçükömeroğlu, Tevfik; Baran, Özlem; Efeoğlu, İhsan; Yamamoto, Kenji

    2014-04-01

    Structure and adhesion properties of TiAlCrNbN coatings were investigated. These coatings were deposited onto AISI H13 steel substrate using pulsed dc closed field unbalanced magnetron sputtering at different deposition parameters including duty cycle, bias voltage, and working pressure. The coatings have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. The TiAlCrNbN-graded composite coatings have a dense and columnar structure. The X-ray diffraction patterns of coatings exhibited predominantly c-TiAlCrN, h-NbN, and h-TiAlN reflections. Scratch resistance test showed that the highest adhesion strength was attained as 68 N at 2.5 μs duty time, 100 V bias voltages, and 3 × 10-3 Torr deposition parameters. The lowest adhesion strength was obtained as 55 N at 0.5 μs duty time, 50V bias voltage, and 2 × 10-3 Torr deposition parameters.

  16. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential

    NASA Astrophysics Data System (ADS)

    Ogwu, A. A.; Darma, T. H.

    2013-05-01

    The achievement of a reproducible and controlled deposition of partitioned Cu2O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu2O/CuO films. The production of a core rich Cu2O and surface rich Cu2O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P3/2 and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P3/2 fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(Is) to main peak intensity ratio (Im) ≤ 0.45 as an indicator of a core rich Cu2O and surface rich Cu2O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu2O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future

  17. Influence of vanadium incorporation on the microstructure, mechanical and tribological properties of Nb–V–Si–N films deposited by reactive magnetron sputtering

    SciTech Connect

    Ju, Hongbo; Xu, Junhua

    2015-09-15

    Composite Nb–V–Si–N films with various V contents (3.7–13.2 at.%) were deposited by reactive magnetron sputtering and the effects of V content on the microstructure, mechanical and tribological properties of Nb–V–Si–N films were investigated. The results revealed that a three-phase structure, consisting of face-centered cubic (fcc) Nb–V–Si–N, hexagonal close-packed (hcp) Nb–V–Si–N and amorphous Si{sub 3}N{sub 4}, co-exists in the Nb–V–Si–N films and the cubic phase is dominant. The hardness and critical load (L{sub c}) of Nb–V–Si–N films initially increased gradually and reached a summit, then decreased with the increasing V content in the films and the maximum values were 35 GPa and 9.8 N, respectively, at 6.4 at.% V. The combination of V into Nb–Si–N film led to the fracture toughness linearly increasing from 1.11 MPa·m{sup 1/2} at 3.7 at.% V to 1.67 MPa·m{sup 1/2} at 13.2 at.% V. At room temperature (RT), the average friction coefficient decreased from 0.80 at 3.7 at.% V to 0.55 at 13.2 at.% V for the Nb–V–Si–N films. The wear rate of Nb–V–Si–N films initially decreased and then increased after reaching a minimum value of about 6.35 × 10{sup −} {sup 7} mm{sup 3}/N·mm at 6.4 at.% V. As the rise of testing temperature from 200 °C to 600 °C, the average friction coefficient of Nb–V–Si–N films decreased with the increase of the testing temperature regardless of V content. However, the wear rate gradually increased for all films. The average friction coefficient and wear rate at RT and elevated temperatures were mainly influenced by the vanadium oxides with weakly bonded lattice planes. - Highlight: • Fcc-Nb–V–Si–N, hcp-Nb–V–Si–N and amorphous Si{sub 3}N{sub 4} co-existed in the films. • The amount of Si{sub 3}N{sub 4} decreased with increasing V content in the films. • Hardness of Nb–V–Si–N film (6.4 at.%) reached a maximum value of 35 GPa. • Addition of V led to the

  18. Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

    SciTech Connect

    Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony; Konstantinidis, Stephanos

    2012-07-15

    The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

  19. ION MAGNETRON

    DOEpatents

    Gow, J.D.; Layman, R.W.

    1962-10-31

    A magnetohydrodynamic device or plasma generator of the ion magnetron class is described wherein a long central electrode is disposed along the axis of an evacuated cylinder. A radial electric field and an axial magnetic field are provided between the cylsnder and the electrode, forming a plasma trapping and heating region. For maximum effectiveness, neutral particles from the cylinder wall must be prevented from entering such region This is effected by forming a cylindrical sheath of electrons near the cylinder wall for ionizing undesired neutral particles, which are then trapped and removed by the magnetic field. An annular filament at one end of the device provides the electrons, which follow the axial magnetic field to a reflecting electrode at the opposite end of the device. (AEC)

  20. Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Lewandowski, M.

    2016-02-01

    The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

  1. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  2. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  3. Study of optical properties of asymmetric bipolar pulse DC magnetron sputtered Ta{sub 2}O{sub 5} thin film as a function of oxygen content in deposition ambient

    SciTech Connect

    Haque, S. Maidul Shinde, D. D. Misal, J. S.; Bhattacharyya, D.; Sahoo, N. K.

    2014-04-24

    Tantalum penta-oxide thin films have been deposited by reactive sputtering technique using asymmetric bipolar pulsed DC source at various oxygen percentage viz. 0 to 50 %. The optical properties of the films have been studied by spectroscopic ellipsometry measurements. It has been observed that compact films with low void fraction, high refractive index and band gap can be obtained by the above technique with oxygen percentage in the range of 30–40%. The films deposited with zero or very low oxygen content have high deposition rate and yield metal rich films with large voids, defects, low band gap and high refractive index. Similarly films deposited with >40% oxygen content again contain voids and defects due to the presence of large amount of gas molecules in the sputtering ambient.

  4. Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

    SciTech Connect

    Schmidt, S.; Greczynski, G.; Jensen, J.; Hultman, L.; Czigany, Zs.

    2012-07-01

    Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies. Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

  5. Anatase TiO₂ films with dominant {001} facets fabricated by direct-current reactive magnetron sputtering at room temperature: oxygen defects and enhanced visible-light photocatalytic behaviors.

    PubMed

    Zheng, Jian-Yun; Bao, Shan-Hu; Guo, Yu; Jin, Ping

    2014-04-23

    A TiO2 film with dominant anatase {001} facets is directly prepared by direct-current reactive magnetron sputtering at room temperature without using morphology-controlling agents. The formation mechanism of anatase TiO2 films with dominant {001} facets is explained by the competition between thermodynamics and ion impinging in the deposition process. The crystalline TiO2 film shows a superior photocatalytic efficiency for the degradation of Rhodamine B under UV-visible (λ > 250 nm) lights. Furthermore, a comparable photodegradation of Rhodamine B is also found on the TiO2 film surface by using visible (λ > 420 nm) lights. During film growth, the surface bombarded by high energy of ions yields plenty of oxygen defects, which can enhance the photocatalytic activity of the films irradiated under visible light. PMID:24720367

  6. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  7. Electronic and optical properties of ScN and (Sc,Mn)N thin films deposited by reactive DC-magnetron sputtering

    SciTech Connect

    Saha, Bivas; Naik, Gururaj; Boltasseva, Alexandra; Drachev, Vladimir P.; Marinero, Ernesto E.; Sands, Timothy D.

    2013-08-14

    Scandium nitride (ScN) is a rocksalt semiconductor that has attracted significant attention from various researchers for a diverse range of applications. Motivated by the prospect of using its interesting electronic structure for optoelectronic and dilute magnetic semiconductor applications, we present detailed studies of the electronic transport and optical properties of ScN and its alloys with manganese nitride (MnN). Our results suggest (a) dilute manganese doping in ScN compensates for the high n-type carrier concentrations arising due to oxygen impurities and (b) an n-type to p-type carrier type transition occurs at a composition between 5.8% and 11% Mn on Sc sites. In terms of its optical properties, our analysis clearly indicates direct and indirect bandgap absorption edges of ScN located at 2.04 eV and 1.18 eV, respectively. In addition to the direct gap absorption edge, (Sc,Mn)N samples also show Mn-defect induced electronic absorption. Photoluminescence measurements at room temperature from ScN films exhibit a yellowish-green emission corresponding to direct gap radiative recombination. Direct gap recombination is not expected given the smaller indirect gap. A possible role of high excitation intensities in suppressing relaxation and recombination across the indirect bandgap is suspected. Raman spectroscopic and ellipsometric characterization of the dielectric permittivities of ScN and (Sc,Mn)N are also presented to assist in understanding the potential of ScN for optoelectronic applications.

  8. Magnetron discharge sputtering for fabrication of nanogradient optical coatings

    NASA Astrophysics Data System (ADS)

    Volpian, O. D.; Kuzmichev, A. I.; Ermakov, G. F.; Krikunov, A. I.; Obod, Yu A.; Silin, N. V.; Shkatula, S. V.

    2015-11-01

    The technology of the middle frequency pulse reactive magnetron sputtering for fabrication of nanogradient optical coatings with smooth variation of refractive index was developed and studied. The technology is based on programmable motion of a substrate over two magnetrons with targets of different materials. The feature of the deposition process is a constant composition of reactive gas medium and an invariable magnetron operation mode. To realize this technology, an automatic computer-controlled sputtering system additionally comprising a gas discharge activator of reactive gas (oxygen) and an in situ optical monitor- spectrovisor has been built. The dielectric oxide-based nanogradient coatings of photon-barrier type were successfully fabricated. The obtained results confirm the high potential of the middle frequency pulse reactive magnetron sputtering of silicon and metal targets for fabrication of nanogradient dielectric optical coatings with excellent properties.

  9. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  10. Substrate heating and cooling during magnetron sputtering of copper target

    NASA Astrophysics Data System (ADS)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S.; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-01

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density.

  11. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  12. Electrochromic behavior of W(x)Si(y)O(z) thin films prepared by reactive magnetron sputtering at normal and glancing angles.

    PubMed

    Gil-Rostra, Jorge; Cano, Manuel; Pedrosa, José M; Ferrer, Francisco Javier; García-García, Francisco; Yubero, Francisco; González-Elipe, Agustín R

    2012-02-01

    This work reports the synthesis at room temperature of transparent and colored W(x)Si(y)O(z) thin films by magnetron sputtering (MS) from a single cathode. The films were characterized by a large set of techniques including X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), Fourier transform infrared (FT-IR), and Raman spectroscopies. Their optical properties were determined by the analysis of the transmission and reflection spectra. It was found that both the relative amount of tungsten in the W-Si MS target and the ratio O(2)/Ar in the plasma gas were critical parameters to control the blue coloration of the films. The long-term stability of the color, attributed to the formation of a high concentration of W(5+) and W(4+) species, has been related with the formation of W-O-Si bond linkages in an amorphous network. At normal geometry (i.e., substrate surface parallel to the target) the films were rather compact, whereas they were very porous and had less tungsten content when deposited in a glancing angle configuration. In this case, they presented outstanding electrochromic properties characterized by a fast response, a high coloration, a complete reversibility after more than one thousand cycles and a relatively very low refractive index in the bleached state. PMID:22208156

  13. Dynamics of reactive high-power impulse magnetron sputtering discharge studied by time- and space-resolved optical emission spectroscopy and fast imaging

    SciTech Connect

    Hala, M.; Viau, N.; Zabeida, O.; Klemberg-Sapieha, J. E.; Martinu, L.

    2010-02-15

    Time- and space-resolved optical emission spectroscopy and fast imaging were used for the investigation of the plasma dynamics of high-power impulse magnetron sputtering discharges. 200 {mu}s pulses with a 50 Hz repetition frequency were applied to a Cr target in Ar, N{sub 2}, and N{sub 2}/Ar mixtures and in a pressure range from 0.7 to 2.66 Pa. The power density peaked at 2.2-6 kW cm{sup -2}. Evidence of dominating self-sputtering was found for all investigated conditions. Up to four different discharge phases within each pulse were identified: (i) the ignition phase, (ii) the high-current metal-dominated phase, (iii) the transient phase, and (iv) the low-current gas-dominated phase. The emission of working gas excited by fast electrons penetrating the space in-between the electrodes during the ignition phase spread far outwards from the target at a speed of 24 km s{sup -1} in 1.3 Pa of Ar and at 7.5 km s{sup -1} in 1.3 Pa of N{sub 2}. The dense metal plasma created next to the target propagated in the reactor at a speed ranging from 0.7 to 3.5 km s{sup -1}, depending on the working gas composition and the pressure. In fact, it increased with higher N{sub 2} concentration and lower pressure. The form of the propagating plasma wave changed from a hemispherical shape in Ar, to a droplike shape extending far from the target in N{sub 2}. An important N{sub 2} emission rise in the latter case was detected during the transition at the end of the metal-dominated phase.

  14. Direct-current magnetron sputtering for optical coatings

    NASA Astrophysics Data System (ADS)

    Lagana, Paolo; Misiano, Carlo; Simonetti, Enrico

    1994-09-01

    The advantages of optical coatings realized by Sputtering versus thermal evaporation by crucible or Electron Gun, are very well known, but this technique is used only partially for dielectric coatings despite of a wide use in semiconductors and microcircuits, due to the slowness of RF Sputtering processes when starting from dielectric targets. This paper describes a DC Reactive Magnetron Sputtering technique from metal target set up at Ce.Te.V. for deposition of multilayer coatings, with cycle times comparable-or even faster-than conventional solution. The advantages of this process consist in obtaining films with high optical and mechanical performances with high repeatability on room temperature substrates. Pumping cycle can thus be faster and dead time for substrates heating and cooling down can be avoided, characteristics which plastic substrates can particularly take advantage of. Performances of the realized coatings on glass and plastic substrates, together with cycle time and material costs, are finally compared to results obtainable by Electron Beam Gun Reactive Deposition.

  15. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  16. Factors determining the efficiency of magnetron sputtering. Optimization criteria

    NASA Astrophysics Data System (ADS)

    Rogov, A. V.; Kapustin, Yu. V.; Martynenko, Yu. V.

    2015-02-01

    We report on the results of experimental study of the dependence of sputtering energy efficiency K w in a dc planar magnetron sputtering setup on the discharge power, working gas pressure, magnetic field, cathode erosion depth, and the structure of the gas puffing system and anode. We propose that this parameter be used for comparing the degree of perfection of the magnetron design irrespective of the magnetron size and structural features. The results of measurements of K w in sputtering of Al, Ti, Cr, Cu, Zn, Zr, Nb, Mo, Ag, In, Sn, Ta, W, Pt, and Au are considered. The optimization criterion is worked out for the magnetic system of the magnetron, which ensures the minimal working pressure and the maximal sputtering rate for the cathode. The results are analyzed theoretically.

  17. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  18. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  19. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    SciTech Connect

    Dhivya, P.; Prasad, A.K.; Sridharan, M.

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  20. Single-phase polycrystalline Ti(1-x)W(x)N alloys (0 less than or equal to x less than or equal to 0.7)grown by UHV reactive magnetron sputtering: Microstructure and physical properties

    NASA Astrophysics Data System (ADS)

    Moser, J. H.; Tian, F.; Haller, O.; Bergstrom, D. B.; Petrov, I.; Greene, J. E.; Wiemer, C.

    1994-12-01

    Single-phase 300 nm thick B1-NaCl structure polycrystalline Ti(1-x)W(x)N alloys, with compositions extending from TiN to Ti(0.3)W(0.7)N, have been grown at 500 C on amorphous SiO2 by ultra-high vacuum reactive magnetron sputtering from Ti and W targets in 10 mTorr N2 discharges. The anion-to-cation ratio ranged from slightly overstoichiometric (1 less than N/(Ti+W) less than or equal to 1.1) in TiN-rich alloys to understoichiometric in WN-rich alloys with N/(Ti+W)=0.9 at x=0.7. The relaxed alloy lattice constant a(sub 0) initially increased with increasing W and then decreased below the stoichiometric TiN value, a(sub TiN)=0.42416 nm, for understoichiometric (i.e. N deficient) alloys with x greater than 0.5. Plan-view and cross-sectional transmission electron microscopy showed that the films exhibited a columnar microstructure, with typical column diameters of 20-25 nm, and a preferred orientation which changed from strong (111) in TiN-rich alloys to strong (002) in WN-rich alloys. The normalized room-temperature resistivity increased linearly at a rate drho/rho(sub TiN) dx=2.5 with increasing WN concentration x due to a combination of alloy, boundary, and free-surface scattering. All of the above results as a function of film composition are directly related to differences in the intensity of low-energy particle irradiation (primarily backscattered N) during film growth.

  1. Frequency agile relativistic magnetrons

    SciTech Connect

    Levine, J.S.; Harteneck, B.D.; Price, H.D.

    1995-11-01

    The authors are developing a family of frequency agile relativistic magnetrons to continuously cover the bands from 1 to 3 GHz. They have achieved tuning ranges of > 33%. The magnetrons have been operated repetitively in burst mode at rates up to 100 pps for 10 sec. Power is extracted from two resonators, and is in the range of 400--600 MW, fairly flat across the tuning bandwidth. They are using a network of phase shifters and 3-dB hybrids to combine the power into a single arm and to provide a continuously adjustable attenuator.

  2. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  3. Evaluation of momentum effects on material properties of titanium-silicon-nitrogen nanocrystalline composites prepared by pulsed dc reactive sputtering

    NASA Astrophysics Data System (ADS)

    Sunal, Paul Dennis

    The investigation had as a general goal the deposition of thin films that possess high erosion wear resistance. The fabrication technique used for this purpose was an industry-compatible process called reactive sputtering physical vapor deposition (PVD). The study specifically involved depositing Ti-Si-N nc-composite thin films according to generic design principles that specify using a transition metal nitride and a covalent nitride material system in order to produce hard coatings (˜50 GPa Vickers hardness). Thin films were deposited using reactive pulsed, do sputtering to avoid arcing issues and for wider control over the process properties such as the deposition rate and level of bombardment. Two sputter guns used synchronized pulsed do signals, which were asymmetric and bipolar with positive voltages of less than +100 V and negative voltages of -500 to -1000 V. The pulsing frequency was varied in this co-deposition system as a possible means to control the nanocrystalline composite thin film properties by controlling the level of bombardment. The thin films were characterized using X-ray diffraction (XRD) and transmission electron microscopy (TEM) to determine the crystallinity of the films. XRD results show the presence of the (111), (220), and (200) orientations with the later being most common. TEM bright-field images show nanocrystals in the 10 to 40 nm range, depending on the pulsing frequency. A columnar morphology (50--120 nm diameters) was observed in the nc-composite films from images taken with a scanning electron microscope. Verification of the TiN and SiN phases was accomplished using XPS to analyze the binding energies of Ti 2p and Si 2p electrons, respectively. Oxygen was detected in the films, (2--9 at.%) depending on pulsing frequency, and it severely worsened the mechanical properties, specifically the hardness, by reacting with some of the silicon in the SiN phase. A maximum Vickers hardness, Hv, of 32 GPa and reduced elastic modulus, Er, of

  4. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential

    SciTech Connect

    Ogwu, A. A.; Darma, T. H.

    2013-05-14

    The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory

  5. Magnetron injection gun scaling

    SciTech Connect

    Lawson, W.

    1988-04-01

    Existing analytic design equations for magnetron injection guns (MIG's) are approximated to obtain a set of scaling laws. The constraints are chosen to examine the maximum peak power capabilities of MIG's. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations.

  6. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. I. Negative ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Mass and energy spectra of negative ions in magnetron sputtering discharges have been investigated with an energy-dispersive mass spectrometer. The dc magnetrons have been operated in the same reactive Ar/O{sub 2} atmosphere but with three different target materials: Cu, In, and W. Besides negative ions of the working gas, a variety of target metal containing negative molecular ions were found in the discharge. Their occurrence is strongly dependent on the target material. It has been correlated to the electron affinity and the bond strength of the molecules which has been calculated by density functional theory. Energy spectra of the negative ions exhibit three contributions that are clearly distinguishable. Their different origin is discussed as electron attachment in the gas phase and at the target surface, and molecule fragmentation during transport from target to substrate. The latter two contributions again significantly deviate for different target material. The high-energy part of the spectra has been analyzed with respect to the energy the particles gain upon release from the surface. It suggests that bigger molecules formed on the surface are released by ion-assisted desorption.

  7. Effect of sputtering pressure on crystalline quality and residual stress of AlN films deposited at 823 K on nitrided sapphire substrates by pulsed DC reactive sputtering

    NASA Astrophysics Data System (ADS)

    Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki

    2016-05-01

    Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4–1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.

  8. Metal-AlN cermet solar selective coatings deposited by direct current magnetron sputtering technology

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu

    1998-02-01

    A series of metal-aluminium nitride (M-AlN) cermet materials for solar selective coatings was deposited by a novel direct current (d.c.) magnetron sputtering technology. Aluminium nitride was used as the ceramic component in the cermets, and stainless steel (SS), nickel-based alloy 0022-3727/31/4/003/img1 (NiCr), molybdenum-based alloy 0022-3727/31/4/003/img2 (TZM) and tungsten were used as the metallic components. The aluminium nitride ceramic and metallic components of the cermets were deposited by simultaneously running both an aluminium target and another metallic target in a gas mixture of argon and nitrogen. The ceramic component was deposited by d.c. reactive sputtering and the metallic component by d.c. non-reactive sputtering. The total sputtering gas pressure was 0.8-1.0 Pa and the partial pressure of reactive nitrogen gas was set at 0.020-0.025 Pa which is sufficiently high to ensure that a nearly pure AlN ceramic sublayer was deposited by d.c. reactive sputtering. Because of the excellent nitriding resistance of stainless steel and the other alloys and metal, a nearly pure metallic sublayer was deposited by d.c. sputtering at this low nitrogen partial pressure. A multilayered system, consisting of alternating metallic and AlN ceramic sublayers, was deposited by substrate rotation. This multisublayer system can be considered as a macrohomogeneous cermet layer with metal volume fraction determined by controlling the thicknesses of metallic and ceramic sublayers. Following this procedure, M-AlN cermet solar selective coatings with a double cermet layer structure were deposited. The films of these selective surfaces have the following structure: a low metal volume fraction cermet layer is placed on a high metal volume fraction cermet layer which in turn is placed on an aluminium metal infrared reflection layer. The top surface layer consists of an aluminium nitride antireflection layer. A solar absorptance of 0.92-0.96 and a normal emittance of 0.03-0.05 at

  9. Improved Poisson solver for cfa/magnetron simulation

    SciTech Connect

    Dombrowski, G.E.

    1996-12-31

    E{sub dc}, the static field of a device having vane-shaped anodes, has been determined by application of Hockney`s method, which in turn uses Buneman`s cyclic reduction. This result can be used for both cfa and magnetrons, but does not solve the general space-charge fields. As pointed out by Hockney, the matrix of coupling capacitive factors between the vane-defining mesh points can also be used to solve the Poisson equation for the entire cathode-anode domain. Space-charge fields of electrons between anode electrodes can now be determined. This technique also computes the Ramo function for the entire region. This method has been applied to the magnetron. Extension to the cfa with many different space-charge bunches does not appear to be practicable. Calculations for the type 4J50 magnetron by the various degrees of accuracy in solving the Poisson equation are compared with experimental measurements.

  10. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket , by dc-magnetron deposition

    SciTech Connect

    Undalov, Yu. K. Terukov, E. I.; Gusev, O. B.; Lebedev, V. M.; Trapeznikova, I. N.

    2011-12-15

    The results of a comprehensive study of the conditions for growing a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket films are presented. The effect of the composition of various erbium-containing targets (a-SiO{sub x}:H , ErO{sub x}, Er{sub 2}SiO{sub 5}, Er{sub 2}O{sub 3}, and Er), substrate temperature, and annealing temperatures in argon, air, and under conditions of SiH{sub 4} + Ar + O{sub 2} plasma glow is studied. In order to obtain a-SiO{sub x}:H Left-Pointing-Angle-Bracket Er,O Right-Pointing-Angle-Bracket films with the highest photoluminescence intensity of erbium ions, it is recommended for the following technological conditions to be used: the substrate holder should be insulated from dc-magnetron electrodes and the working gas mixture should include silane, argon, and oxygen. Single-crystal silicon and metal erbium should be used as targets. The erbium target should be placed only in the Si-target erosion zone.

  11. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  12. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  13. A Hollow Cathode Magnetron (HCM)

    SciTech Connect

    S.A. Cohen; Z. Wang

    1998-04-01

    A new type of plasma sputtering device, named the hollow cathode magnetron (HCM), has been developed by surrounding a planar magnetron cathode with a hollow cathode structure (HCS). Operating characteristics of HCMs, current-voltage ( I-V ) curves for fixed discharge pressure and voltage-pressure ( V-p ) curves for fixed cathode current, are measured. Such characteristics are compared with their planar magnetron counterparts. New operation regimes, such as substantially lower pressures (0.3 mTorr), were discovered for HCMs. Cathode erosion profiles show marked improvement over planar magnetron in terms of material utilization. The use of HCMs for thin film deposition are discussed.

  14. Magic-T-Coupled Magnetrons

    NASA Technical Reports Server (NTRS)

    Dickinson, R. M.

    1985-01-01

    Outputs of two magnetrons added coherently in scheme based on resonant waveguide coupling and injection phase locking. In addition, filaments are turned off after starting. Overall effect is relatively-inexpensive, lowpower, noisy magnetrons generate clean carrier signals of higher power that ordinarily require more expensive klystrons.

  15. Magnetron tuner has locking feature

    NASA Technical Reports Server (NTRS)

    Martucci, V. J.

    1969-01-01

    Magnetron tuning arrangement features a means of moving a tuning ring axially within an anode cavity by a system of reduction gears engaging a threaded tuning shaft of lead screw. The shaft positions the tuning ring for the desired magnetron output frequency, and a washer prevents backlash.

  16. Tracking the Magnetron Motion in FT-ICR Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Jertz, Roland; Friedrich, Jochen; Kriete, Claudia; Nikolaev, Evgeny N.; Baykut, Gökhan

    2015-08-01

    In Fourier transform ion cyclotron resonance spectrometry (FT-ICR MS) the ion magnetron motion is not usually directly measured, yet its contribution to the performance of the FT-ICR cell is important. Its presence is manifested primarily by the appearance of even-numbered harmonics in the spectra. In this work, the relationship between the ion magnetron motion in the ICR cell and the intensities of the second harmonic signal and its sideband peak in the FT-ICR spectrum is studied. Ion motion simulations show that during a cyclotron motion excitation of ions which are offset to the cell axis, a position-dependent radial drift of the cyclotron center takes place. This radial drift can be directed outwards if the ion is initially offset towards one of the detection electrodes, or it can be directed inwards if the ion is initially offset towards one of the excitation electrodes. Consequently, a magnetron orbit diameter can increase or decrease during a resonant cyclotron excitation. A method has been developed to study this behavior of the magnetron motion by acquiring a series of FT-ICR spectra using varied post-capture delay (PCD) time intervals. PCD is the delay time after the capture of the ions in the cell before the cyclotron excitation of the ion is started. Plotting the relative intensity of the second harmonic sideband peak versus the PCD in each mass spectrum leads to an oscillating "PCD curve". The position and height of minima and maxima of this curve can be used to interpret the size and the position of the magnetron orbit. Ion motion simulations show that an off-axis magnetron orbit generates even-numbered harmonic peaks with sidebands at a distance of one magnetron frequency and multiples of it. This magnetron offset is due to a radial offset of the electric field axis versus the geometric cell axis. In this work, we also show how this offset of the radial electric field center can be corrected by applying appropriate DC correction voltages to the

  17. Analytic formulas for magnetron characteristic curves

    SciTech Connect

    Riyopoulos, S.

    1995-12-31

    A closed non-linear set of equations is obtained based on the guiding center fluid model to describe steady-state magnetron operation. Spoke charge effects are included self-consistently, by introducing a mean-field approximation so that the effective AC potential preserves the geometric similarity with the vacuum solutions. New characteristic equations, relating the anode current 1 and the RF power P to the applied DC voltage V at given RF frequency, are obtained. Previously obtained V-I equations disagree with experiments in that (a) anode current and RF power go to zero when the resonance condition V = V{sub s} is met, (b) the operation voltage V is a double-valued function of the current I; there exist two nearly symmetric operation points around V{sub s} at the same current I. Yet magnetrons, and the related crossed-field amplifiers, are known to exhibit stable operation with single valued V-I characteristics well below V{sub s}. Although zero gain at synchronism applies to other microwave devices (TWT`s, FEL`s), experimental results and particle simulations of crossed field devices suggest otherwise. The new formulas show reasonable agreement with experiments.

  18. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

    2015-11-01

    The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  19. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. II. Positive ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Spectra of the ion mass and energy distributions of positive ions in reactive (Ar/O{sub 2}) and nonreactive (Ar) dc magnetron sputtering discharges have been investigated by energy-resolved mass spectrometry. The results of three sputter target materials, i.e., Cu, In, and W are compared to each other. Besides the main gas constituents, mass spectra reveal a variety of molecular ions which are dependent on the target material. In reactive mode, ArO{sup +} is always observed in Ar/O{sub 2} but molecules containing Ar and the metal were exclusively found for the Cu target. The occurrence of the different ions is explained in the context of their bond strengths obtained from density functional theory calculations. The energy spectra generally contain the known low-energy peak corresponding to the plasma potential. Differently extended high-energy tails due to sputtered material were observed for the different targets. Besides these, high-energetic ions were detected with up to several 100 eV. Their energies are significantly different for Ar{sup +} and O{sup +} with Ar{sup +} strongly depending on the target material. The spectra are discussed together with results from transport of ions in matter (TRIM) calculation to elucidate the origin of these energetic ions.

  20. Nonsputtering impulse magnetron discharge

    SciTech Connect

    Khodachenko, G. V.; Mozgrin, D. V.; Fetisov, I. K.; Stepanova, T. V.

    2012-01-15

    Experiments with quasi-steady high-current discharges in crossed E Multiplication-Sign B fields in various gases (Ar, N{sub 2}, H{sub 2}, and SF{sub 6}) and gas mixtures (Ar/SF{sub 6} and Ar/O{sub 2}) at pressures from 10{sup -3} to 5 Torr in discharge systems with different configurations of electric and magnetic fields revealed a specific type of stable low-voltage discharge that does not transform into an arc. This type of discharge came to be known as a high-current diffuse discharge and, later, a nonsputtering impulse magnetron discharge. This paper presents results from experimental studies of the plasma parameters (the electron temperature, the plasma density, and the temperature of ions and atoms of the plasma-forming gas) of a high-current low-pressure diffuse discharge in crossed E Multiplication-Sign B fields.

  1. Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered ScxAl1-xN thin films

    NASA Astrophysics Data System (ADS)

    Mayrhofer, P. M.; Eisenmenger-Sittner, C.; Euchner, H.; Bittner, A.; Schmid, U.

    2013-12-01

    Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. ScxAl1-xN thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E1(TO) and A1(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

  2. Double-sided Relativistic Magnetron

    NASA Astrophysics Data System (ADS)

    Agafonov, A. V.; Krastelev, E. G.

    1997-05-01

    A new scheme of a symmetricaly powered relativistic magnetron and several methods of localised electron flow forming in an interaction region are proposed to increase an efficiency of relativistic magnetrons. As will be shown, a very important reason is the effect of nonsymmetric feeding of power from one side of a magnetron, which is typical for experiments. One-sided powering leads to the axial drift of electrons, to the transformation of transverse velocities of electrons to longitudinal one and to the generation of a parasitic e-beam which does not take part in energy exchange between electrons and waves at all. A special driver was designed for double-sided powering of relativistic magnetrons. The proposed system is compact, rigid and capable of reliable operation at high repetition rates, which is advantageous for many applications. Several smooth-bore magnetrons were tested by means of computer simulations using PIC code KARAT. The results showed a dramatical difference between the dynamics of electron flow for one- and two-sided power feeding of a structure under test. Design of a driver and computer simulation results are presented.

  3. Wurtzite structure Sc{sub 1-x}Al{sub x}N solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

    SciTech Connect

    Hoeglund, Carina; Birch, Jens; Bareno, Javier; Persson, Per O. A.; Wingqvist, Gunilla; Zukauskaite, Agne; Hultman, Lars; Alling, Bjoern; Czigany, Zsolt

    2010-06-15

    AlN(0001) was alloyed with ScN with molar fractions up to {approx}22%, while retaining a single-crystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al{sub 2}O{sub 3}(0001) and MgO(111) substrates. Films with ScN contents between 23% and {approx}50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt structure Sc{sub 1-x}Al{sub x}N(111) films. The experimental results are analyzed with ion beam analysis, x-ray diffraction, and transmission electron microscopy, together with ab initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.

  4. Milliwatt dc/dc Inverter

    NASA Technical Reports Server (NTRS)

    Mclyman, C. W.

    1983-01-01

    Compact dc/dc inverter uses single integrated-circuit package containing six inverter gates that generate and amplify 100-kHz square-wave switching signal. Square-wave switching inverts 10-volt local power to isolated voltage at another desired level. Relatively high operating frequency reduces size of filter capacitors required, resulting in small package unit.

  5. Simulation of the velocity spread in magnetron injection guns

    SciTech Connect

    Liu, C.; Antonsen, T.M. Jr.; Levush, B.

    1996-06-01

    The velocity spread associated with phase mixing due to dc space charge in a magnetron injection gun (MIG) is investigated. A simple model is introduced to describe the mixing process. Simulations are performed by using the results of the EGUN trajectory calculation for initial conditions at the entrance of the drift region. Results for a 170 GHz gun are obtained and compared with EGUN simulations. This new model provides a more accurate and efficient approach for analyzing the velocity spread due to mixing in MIG`s.

  6. Are the argon metastables important in high power impulse magnetron sputtering discharges?

    SciTech Connect

    Gudmundsson, J. T.; Lundin, D.; Minea, T. M.; Stancu, G. D.; Brenning, N.

    2015-11-15

    We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization is always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.

  7. Comparative study of reference currents and DC bus voltage control for Three-Phase Four-Wire Four-Leg SAPF to compensate harmonics and reactive power with 3D SVM.

    PubMed

    Chebabhi, A; Fellah, M K; Kessal, A; Benkhoris, M F

    2015-07-01

    In this paper the performances of three reference currents and DC bus voltage control techniques for Three-Phase Four-Wire Four-Leg SAPF are compared for balanced and unbalanced load conditions. The main goals are to minimize the harmonics, reduce the magnitude of neutral current, eliminate the zero-sequence current components caused by single-phase nonlinear loads and compensate the reactive power, and on the other hand improve performances such as robustness, stabilization, trajectory pursuit, and reduce time response. The three techniques are analyzed mathematically and simulation results are compared. The techniques considered for comparative study are the PI Control, Sliding Mode Control and the Backstepping Control. Synchronous reference frame theory (SRF) in the dqo-axes is used to generate the reference currents, of the inverter. PMID:25704056

  8. Linear ion source with magnetron hollow cathode discharge

    SciTech Connect

    Tang, D.L.; Pu, S.H.; Wang, L.S.; Qiu, X.M.; Chu, Paul K.

    2005-11-15

    A linear ion source with magnetron hollow cathode discharge is described in this paper. The linear ion source is based on an anode layer thruster with closed-drift electrons that move in a closed path in the ExB fields. An open slit configuration is designed at the end of the ion source for the extraction of the linear ion beam produced by the magnetron hollow cathode discharge. The special configurations enable uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. The ion current density and uniformity were experimentally evaluated. Using the ion source, surface modification was conducted on polyethylene terephthalate polymer films to improve the adhesion strength with ZnS coatings.

  9. Simplified dc to dc converter

    NASA Technical Reports Server (NTRS)

    Gruber, R. P. (Inventor)

    1984-01-01

    A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance. The switching frequency of the switches is appropriately varied to increase the voltage drop across the virtual reactance in the secondary winding to which there is connected a low impedance load. A starting circuit suitable for voltage switching devices is provided.

  10. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  11. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  12. Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

    PubMed

    Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed. PMID:26665074

  13. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    PubMed Central

    Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    Summary We investigate the effect of the thickness of the silicon nitride (SiNx) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed. PMID:26665074

  14. DC to DC battery charger

    SciTech Connect

    Carr, F.L.; Terrill, L.R.

    1987-01-20

    A DC to DC battery charger is described for a vehicle comprising: adapter plug means for making electrical connections to a first battery through a cigarette lighter socket in the vehicle; means of making electrical connections to a second battery to be charged; a DC to AC converter and an AC to DC rectifier for elevating the voltage from the first battery to a voltage above that of the second battery; integrated circuit means for generating a pulse width modulated current as a function for the charged condition of the second battery; transistor switch means supplied with the pulse width modulated current for developing a charging voltage; a choke coil and a capacitor serially connected to the transistor switch means; and a diode connected across the choke coil and the capacitor whereby the capacitor is charged during pulses of current from the transistor switch means through the choke coil. The choke coil reverses polarity at the termination of the pulses of current and continues to charge the battery through the diode. The DC rectified voltage is controlled by the integrated circuit means for regulating current through the choke coil.

  15. Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

    SciTech Connect

    Mayrhofer, P. M.; Bittner, A.; Schmid, U.; Eisenmenger-Sittner, C.; Euchner, H.

    2013-12-16

    Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. Sc{sub x}Al{sub 1−x}N thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E{sub 1}(TO) and A{sub 1}(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

  16. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  17. Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

    NASA Astrophysics Data System (ADS)

    Sagdeo, P. R.; Shinde, D. D.; Misal, J. S.; Kamble, N. M.; Tokas, R. B.; Biswas, A.; Poswal, A. K.; Thakur, S.; Bhattacharyya, D.; Sahoo, N. K.; Sabharwal, S. C.

    2010-02-01

    Titania-silica (TiO2/SiO2) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

  18. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Weiß, V.; Rossner, H.

    2001-07-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3° and 10°, is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  19. Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

    2015-12-01

    Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

  20. Influence of substrate properties and annealing temperature on the stress state of magnetron sputtered tungsten thin films

    SciTech Connect

    Oliveira, J. C.; Cavaleiro, A.

    2006-11-15

    The influence of substrate properties and annealing temperature on the stress state of tungsten thin films deposited by dc reactive magnetron sputtering was studied using 310 steel (AISI), Fecralloy registered and Invar registered substrates. Besides elemental tungsten, only residual amounts of contamination elements (O, C, Ar, etc.) were detected by electron probe microanalysis. Only the {alpha}-W crystalline structure, with a preferential <110> orientation, was detected in all the films by x-ray diffraction. The highest lattice parameters were measured for the films deposited on 310 steel substrates, while the smallest values were obtained for the films deposited on Invar registered substrates. These results are closely related to the thermal expansion coefficients of the substrates. All the as-deposited films were in a compressive stress state independent of the substrate type (-3 GPa for 310 steel and Fecralloy registered substrates and -2 GPa for Invar registered substrates). The residual compressive stresses of the films deposited on Fecralloy registered substrates strongly decrease with annealing temperatures up to {approx_equal}-8 GPa at 1175 K. This result shows that the measured compressive stresses are not real, and they are a direct consequence of plastic deformation of the substrate. On the contrary, the compressive stresses measured in the films deposited on Invar registered and 310 steel substrates are real as plastic deformation of the substrates is not observed.

  1. Orthogonal optimization for room temperature magnetron sputtering of ZnO:Al films for all-solid electrochromic devices

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Diao, Xungang; Ding, Peng

    2011-02-01

    In order to obtain competent and quality (high transparency, conductivity and stability) aluminium-doped zinc oxide (ZnO:Al, ZAO) films for all solid electrochromic devices, ZAO films were prepared by direct current (D.C.) reactive magnetron sputtering at room temperature based on orthogonal design. Optical and electrical property dependences of the films on the four dominant sputtering parameters: sputtering time, target-substrate distance, sputtering power and O2 flow ratio were simultaneously investigated with measured results using mathematical and statistical method. Optimal Parameters to fabricate ZAO films with optimum comprehensive performances were obtained ultimately. Resistivity and carrier concentration of ZAO film deposited with optimized parameters were 3.89 × 10-4 Ω cm and 1.09 × 1021 cm-3, respectively. ZAO films with these superior properties were employed as transparent electrodes eventually in a WO3 based all-solid electrochromic device which displayed good electrochromic performance. The regulation range for transmittance in the visible region of the device was more than 50%, which was comparable to that of the device adopting indium tin oxide (ITO) films as electrodes.

  2. Flexible electrochromics: magnetron sputtered tungsten oxide (WO3-x) thin films on Lexan (optically transparent polycarbonate) substrates

    NASA Astrophysics Data System (ADS)

    Uday Kumar, K.; Murali, Dhanya S.; Subrahmanyam, A.

    2015-06-01

    Tungsten oxide (WO3-x) based electrochromics on flexible substrates is a topic of recent interest. The present communication reports the electrochromic properties of WO3-x thin films grown on lexan, an optically transparent polycarbonate thermoplastic substrate. The WO3-x films are prepared at room temperature (300 K) by the reactive DC magnetron sputtering technique. The physical properties of metal oxide thin films are known to be controlled by the oxygen stoichiometry of the film. In the present work, the WO3-x thin films are prepared by varying the oxygen flow rates. All the WO3-x thin films are amorphous in nature. The electrochromic performance of the WO3-x thin films is evaluated by cyclic voltammetry measurements on tin doped indium oxide (ITO) coated lexan and glass substrates. The optical band gap of WO3-x thin films grown on lexan substrates (at any given oxygen flow rate) is significantly higher than those grown on glass substrates. The coloration efficiency of WO3-x thin films (at an oxygen flow rate of 10 sccm) on lexan substrates is: 143.9 cm2 C-1 which is higher compared to that grown on glass: 90.4 cm2 C-1.

  3. Effect of Reactive Sputtering Parameters on TiAlN Nanocoating Structure and Morphology

    SciTech Connect

    Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

    2010-10-24

    The effect of substrate bias and nitrogen flow rate on the TiAlN nanocoating structure and morphology has been investigated by using reactive unbalance DC magnetron sputtering. TiAlN nanocoating was deposited on the tungsten carbide insert tool and the structure and morphology were characterized by using XRD and AFM, respectively. The substrate bias was varied between 0 to -221 V and the nitrogen flow rate was varied between 30 to 72 sccm. The results showed that the structure of TiAlN nanocoating consisted of mainly (111) and (200) plane. The structure was significatly influenced by substrate bias in promoting finer crystal size and increased crystal plane spacing while the rms roughness of nanocoating was influenced by substrate bias and nitrogen flow rate.

  4. Effect of Reactive Sputtering Parameters on TiAlN Nanocoating Structure and Morphology

    NASA Astrophysics Data System (ADS)

    Budi, Esmar; Razali, M. Mohd.; Nizam, A. R. Md.

    2010-10-01

    The effect of substrate bias and nitrogen flow rate on the TiAlN nanocoating structure and morphology has been investigated by using reactive unbalance DC magnetron sputtering. TiAlN nanocoating was deposited on the tungsten carbide insert tool and the structure and morphology were characterized by using XRD and AFM, respectively. The substrate bias was varied between 0 to -221 V and the nitrogen flow rate was varied between 30 to 72 sccm. The results showed that the structure of TiAlN nanocoating consisted of mainly (111) and (200) plane. The structure was significatly influenced by substrate bias in promoting finer crystal size and increased crystal plane spacing while the rms roughness of nanocoating was influenced by substrate bias and nitrogen flow rate.

  5. Study of thin TiC xN 1-x films fabricated by hybrid magnetron-laser deposition

    NASA Astrophysics Data System (ADS)

    Kocourek, Tomáš; Jelínek, Miroslav; Studnička, Václav; Kadlec, Jaromír

    2006-02-01

    Titanium- carbonitride thin films were grown at room temperature using a hybrid deposition arrangement combining DC magnetron sputtering and KrF pulsed laser deposition (MSPLD). Carbon and titanium were simultaneously deposited on the same Si substrate, dimensions of 3 cm × 3 cm. Films were fabricated in argon- nitrogen atmosphere of 1 Pa - 5 Pa, for laser fluence of 15 Jcm -2 and magnetron power of 150 W. Film properties were modified by RF discharge held between the target and substrate. Film crystallinity was studied by XRD and the composition depth profile of TiCN layers by glow discharge optical emission spectroscopy (GDOES).

  6. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  7. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface. PMID:20355462

  8. Microstructural evolution of thin film vanadium oxide prepared by pulsed-direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Motyka, M. A.; Gauntt, B. D.; Horn, M. W.; Dickey, E. C.; Podraza, N. J.

    2012-11-01

    Vanadium oxide (VOx) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 ± 6 and 2901 ± 30 Å thick, which were then optically and electrically characterized. The complex dielectric function spectra (ɛ = ɛ1 + iɛ2) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VOx samples. Significant changes in ɛ and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 Å of the top surface of the deposited film to become more electrically resistive as evidenced by variations in ɛ. Exposure of the VOx thin film to atmospheric conditions introduces a similar change in ɛ, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VOx films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.

  9. Full-Scale 3D Simulation of a sputtering magnetron

    NASA Astrophysics Data System (ADS)

    Walton, C. C.; Wilks, S. C.; Ayyaswamy, V.; Verboncoeur, J. P.; Parks, P. B.; Wu, W.; Zhou, C. D.; Stoltz, P. H.

    2010-11-01

    PIC simulations have been used to study ion energy distributions in magnetron plasmas, and coupled with other simulations to relate plasma processes to properties of sputtered films. The plasma is weakly ionized and exchanges heat with the background gas by scattering and charge-exchange reactions. Resulting heating of neutral background gas up to ˜1200K, leading to ˜5X rarefaction and increased plasma impedance, was studied with coupled PIC and Direct Simulation Monte Carlo (DSMC) simulations. Effects of scaling the PIC simulations from 0.1X to 1X physical size, and modifying the plasma potential by a dc substrate bias, will be presented. Comparison to experimental I-V relations and importance for roughness and density of sputtered films will be discussed.

  10. RF magnetron sputtering of thick platinum coatings on glass microspheres

    SciTech Connect

    Meyer, S.F.; Hsieh, E.J.; Burt, R.J.

    1980-05-28

    Thick platinum coatings on glass microspheres are needed for proposed Laser Fusion targets. The spherical nature of these substrates coupled with the small dimensions (approx. 100 ..mu..m OD) make it difficult to achieve a smooth and uniform coating. Coating problems encountered include a rough surface and porous microstructure from the oblique incidence and lack of temperature and bias control, clumping of the microspheres causing non-uniformities, and particle accumulation causing cone defects. Sputtering parameters significantly affecting the coatings include total pressure, DC substrate bias, and the addition of doping gases. Using an ultrasonic vibrating screened cage and RF magnetron Sputtergun, we have successfully batch coated microspheres with up to 6 ..mu..m of Pt, with a surface roughness of 200 nm, thickness non-concentricity of 300 nm, and density greater than 98% of bulk Pt.

  11. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    SciTech Connect

    Sahu, B. B. Han, Jeon G.; Kim, Hye R.; Ishikawa, K.; Hori, M.

    2015-01-21

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons.

  12. Adaptable DC offset correction

    NASA Technical Reports Server (NTRS)

    Golusky, John M. (Inventor); Muldoon, Kelly P. (Inventor)

    2009-01-01

    Methods and systems for adaptable DC offset correction are provided. An exemplary adaptable DC offset correction system evaluates an incoming baseband signal to determine an appropriate DC offset removal scheme; removes a DC offset from the incoming baseband signal based on the appropriate DC offset scheme in response to the evaluated incoming baseband signal; and outputs a reduced DC baseband signal in response to the DC offset removed from the incoming baseband signal.

  13. Characterization of high power impulse magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  14. A Plasma Lens for Magnetron Sputtering

    SciTech Connect

    Anders, Andre; Brown, Jeff

    2010-11-30

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  15. Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

    PubMed

    Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

    2015-04-29

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed. PMID:25844637

  16. Phased Array Technology with Phase and Amplitude Controlled Magnetron for Microwave Power Transmission

    NASA Astrophysics Data System (ADS)

    Shinohara, N.; Matsumoto, H.

    2004-12-01

    We need a microwave power transmitter with light weight and high DC-RF conversion efficiency for an economical SSPS (Space Solar Power System). We need a several g/W for a microwave power transmission (MPT) system with a phased array with 0.0001 degree of beam control accuracy (=tan-1 (100m/36,000km)) and over 80 % of DC-RF conversion efficiency when the weight of the 1GW-class SPS is below a several thousand ton - a several tens of thousand ton. We focus a microwave tube, especially magnetron by economical reason and by the amount of mass-production because it is commonly used for microwave oven in the world. At first, we have developed a phase controlled magnetron (PCM) with different technologies from what Dr. Brown developed. Next we have developed a phase and amplitude controlled magnetron (PACM). For the PACM, we add a feedback to magnetic field of the PCM with an external coil to control and stabilize amplitude of the microwave. We succeed to develop the PACM with below 10-6 of frequency stability and within 1 degree of an error in phase and within 1% of amplitude. We can control a phase and amplitude of the PACM and we have developed a phased array the PCMs. With the PCM technology, we have developed a small light weight MPT transmitter COMET (Compact Microwave Energy Transmitter) with consideration of heat radiation for space use and with consideration of mobility to space.

  17. Peer-to-Peer Magnetron Locking

    NASA Astrophysics Data System (ADS)

    Cruz, Edward Jeffrey

    The viability of coherent power combination of multiple high-efficiency, moderate power magnetrons requires a thorough understanding of frequency and phase control. Injection locking of conventional magnetrons, and other types of oscillators, employing a master-to-slave configuration has been studied theoretically and experimentally. This dissertation focuses on the peer-to-peer locking, where each oscillator acts as a master of and slave to all others, between two conventional magnetrons, where the general condition for locking was recently derived. The experiments performed on peer-to-peer locking of two 1-kW magnetrons verify the recently developed theory on the condition under which the two nonlinear oscillators may be locked to a common frequency and relative phase. This condition reduces to Adler's classical locking condition (master-slave) if the coupling is one way. Dependent on the degree of coupling, the frequency of oscillation when locking occurs was found to not necessarily lie between the two magnetrons' free running frequencies. Likewise, when the locking condition was violated, the beat of the spectrum was not necessarily found to be equal to the difference between the free running frequencies. The frequency of oscillation and relative phase between the two magnetrons when locking did occur were found to correspond to one of two solution modes given by the recent theory. The accessibility of the two possible modes is yet to be determined. This work was supported by ONR, AFRL, AFOSR, L-3 Communications Electron Devices Division and Northrop-Grumman Corporation.

  18. High-Efficiency dc/dc Converter

    NASA Technical Reports Server (NTRS)

    Sturman, J.

    1982-01-01

    High-efficiency dc/dc converter has been developed that provides commonly used voltages of plus or minus 12 Volts from an unregulated dc source of from 14 to 40 Volts. Unique features of converter are its high efficiency at low power level and ability to provide output either larger or smaller than input voltage.

  19. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties. PMID:27483857

  20. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    SciTech Connect

    Crăciunescu, Corneliu M. Mitelea, Ion Budău, Victor; Ercuţa, Aurel

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  1. Analytic model of the energy distribution function for highly energetic electrons in magnetron plasmas

    SciTech Connect

    Gallian, Sara Trieschmann, Jan; Mussenbrock, Thomas; Brinkmann, Ralf Peter; Hitchon, William N. G.

    2015-01-14

    This paper analyzes a situation which is common for magnetized technical plasmas such as dc magnetron discharges and high power impulse magnetron sputtering (HiPIMS) systems, where secondary electrons enter the plasma after being accelerated in the cathode fall and encounter a nearly uniform bulk. An analytic calculation of the distribution function of hot electrons is presented; these are described as an initially monoenergetic beam that slows down by Coulomb collisions with a Maxwellian distribution of bulk (cold) electrons, and by inelastic collisions with neutrals. Although this analytical solution is based on a steady-state assumption, a comparison of the characteristic time-scales suggests that it may be applicable to a variety of practical time-dependent discharges, and it may be used to introduce kinetic effects into models based on the hypothesis of Maxwellian electrons. The results are verified for parameters appropriate to HiPIMS discharges, by means of time-dependent and fully kinetic numerical calculations.

  2. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Crǎciunescu, Corneliu M.; Mitelea, Ion; Budǎu, Victor; ErcuÅ£a, Aurel

    2014-11-01

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  3. Effect of ion bombarding energies on photocatalytic TiO{sub 2} films growing in a pulsed dual magnetron discharge

    SciTech Connect

    Novak, Ondrej; Vlcek, Jaroslav

    2011-05-15

    Photocatalytic crystalline TiO{sub 2} films were deposited by a pulsed dc dual magnetron system. The depositions were performed using two unbalanced magnetrons with planar titanium targets of 50 mm diameter in Ar+O{sub 2} gas mixtures at a total pressure of 0.9 Pa with oxygen partial pressures ranging from 0.2 to 0.9 Pa. The maximum substrate surface temperature was 160 deg. C Both magnetrons operated in the same asymmetric bipolar mode at the repetition frequencies of 100 and 350 kHz with a fixed 50% duty cycle and the average target power densities of 52-74 W cm{sup -2} in the negative voltage phase of the pulses, but the magnetron operations were shifted by a half of the period. Time-averaged energy-resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. The measured structure of the ion energy distributions was correlated with the distinct pulse phases of the magnetron discharges. A decrease in the energy delivered by fast ions (E{>=}10 eV) to the unit volume of the growing films, together with possible effects of plasma-chemical processes, during the depositions at the oxygen partial pressures of 0.5-0.75 Pa and the repetition frequency of 350 kHz resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO{sub 2} films.

  4. Measuring the energy flux at the substrate position during magnetron sputter deposition processes

    SciTech Connect

    Cormier, P.-A.; Thomann, A.-L.; Dussart, R.; Semmar, N.; Mathias, J.; Balhamri, A.; Snyders, R.; Konstantinidis, S.

    2013-01-07

    In this work, the energetic conditions at the substrate were investigated in dc magnetron sputtering (DCMS), pulsed dc magnetron sputtering (pDCMS), and high power impulse magnetron sputtering (HiPIMS) discharges by means of an energy flux diagnostic based on a thermopile sensor, the probe being set at the substrate position. Measurements were performed in front of a titanium target for a highly unbalanced magnetic field configuration. The average power was always kept to 400 W and the probe was at the floating potential. Variation of the energy flux against the pulse peak power in HiPIMS was first investigated. It was demonstrated that the energy per deposited titanium atom is the highest for short pulses (5 {mu}s) high pulse peak power (39 kW), as in this case, the ion production is efficient and the deposition rate is reduced by self-sputtering. As the argon pressure is increased, the energy deposition is reduced as the probability of scattering in the gas phase is increased. In the case of the HiPIMS discharge run at moderate peak power density (10 kW), the energy per deposited atom was found to be lower than the one measured for DCMS and pDCMS discharges. In these conditions, the HiPIMS discharge could be characterized as soft and close to a pulsed DCMS discharge run at very low duty cycle. For the sake of comparison, measurements were also carried out in DCMS mode with a balanced magnetron cathode, in the same working conditions of pressure and power. The energy flux at the substrate is significantly increased as the discharge is generated in an unbalanced field.

  5. Magnetron deposition of TCO films using ion beam

    NASA Astrophysics Data System (ADS)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

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    Volume 201, Issue14 (November 2004)

    Articles in the Current Issue:

    Rapid Research Note

    Highly (001)-textured WS2-x films prepared by reactive radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Seeger, S.; Weiß, V.

    2004-11-01

    Highly (001)-oriented WS2-x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation.

  7. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    NASA Astrophysics Data System (ADS)

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Hoff, B. W.; Gilgenbach, R. M.

    2015-08-01

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions.

  8. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    SciTech Connect

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Gilgenbach, R. M.; Hoff, B. W.

    2015-08-15

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions.

  9. Analysis of peer-to-peer locking of magnetrons

    SciTech Connect

    Pengvanich, P.; Lau, Y. Y.; Cruz, E.; Gilgenbach, R. M.; Hoff, B.; Luginsland, J. W.

    2008-10-15

    The condition for mutual, or peer-to-peer, locking of two magnetrons is derived. This condition reduces to Adler's classical phase-locking condition in the limit where one magnetron becomes the 'master' and the other becomes the 'slave.' The formulation is extended to the peer-to-peer locking of N magnetrons, under the assumption that the electromagnetic coupling among the N magnetrons is modeled by an N-port network.

  10. Non-Neutral Drift Resonance in Magnetrons

    NASA Astrophysics Data System (ADS)

    Kaup, D. J.

    2005-04-01

    We study the features of the RF fields in a magnetron, when the RF amplitude has saturated, in the nonrelativistic, electrostatic limit. In this saturated stage, the linear RF equations can be reduced to a fifth-order set of ordinary differential equations. Two modes of which are fast cyclotron modes, one mode is a fast drift wave, and the other two modes are the usual, well-known, slow magnetron modes. Here, we will study the interaction between the fast drift mode (diocotron mode) and the slow magnetron modes, at the diocotron resonance. We will also show that the fast cyclotron modes can be ignored at this resonance, and thereby can reduce the system to a third- order set of ordinary differential equations. Using multiscale techniques, we will then obtain solutions for the inner and the outer regions at the diocotron resonance, and thereby obtain the conversion and transmission rates between these three modes at the diocotron resonance.

  11. DC/DC Converter Stability Testing Study

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2008-01-01

    This report presents study results on hybrid DC/DC converter stability testing methods. An input impedance measurement method and a gain/phase margin measurement method were evaluated to be effective to determine front-end oscillation and feedback loop oscillation. In particular, certain channel power levels of converter input noises have been found to have high degree correlation with the gain/phase margins. It becomes a potential new method to evaluate stability levels of all type of DC/DC converters by utilizing the spectral analysis on converter input noises.

  12. Optical properties and residual stress in Nb-Si composite films prepared by magnetron cosputtering.

    PubMed

    Tang, Chien-Jen; Porter, Glen Andrew; Jaing, Cheng-Chung; Tsai, Fang-Ming

    2015-02-01

    This paper investigates Nb-Si metal composite films with various proportions of niobium in comparison to pure Nb films. Films were prepared by two-target RF-DC magnetron cosputtering deposition. The optical properties and residual stress were analyzed. A composition of Nb(0.74)Si(0.26) was chosen toward the design and fabrication of solar absorbing coatings having a high absorption in a broad wavelength range, a low residual stress, and suitable optical constants. The layer thicknesses and absorption characteristics of the Nb-Si composite films adhere more closely to the design than other coatings made of dielectric film materials. PMID:25967812

  13. Direct-current magnetron fabrication of indium tin oxide/InP solar cells

    NASA Technical Reports Server (NTRS)

    Coutts, T. J.; Wu, X.; Gessert, T. A.; Li, X.

    1988-01-01

    Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

  14. Velocity distribution of neutral species during magnetron sputtering by Fabry-Perot interferometry

    SciTech Connect

    Britun, N.; Han, J. G.; Oh, S.-G.

    2008-04-07

    The velocity distribution of a metallic neutral species sputtered in a dc magnetron discharge was measured using a planar Fabry-Perot interferometer and a hollow cathode lamp as a reference source. The measurement was performed under different angles of view relative to the target surface. The velocity distribution function in the direction perpendicular to the target becomes asymmetrical as the Ar pressure decreases, whereas it remains nearly symmetrical when the line of sight is parallel to the target surface. The average velocity of the sputtered Ti atoms was measured to be about 2 km/s.

  15. Inhomogeneous optoelectronic and microstructure property distribution across the substrate of ZnO:Al films deposited by room temperature magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Diao, Xungang; Wang, Xuan

    2011-09-01

    Aluminum doped zinc oxide (ZAO) films were deposited by direct current (DC) reactive magnetron sputtering from a ZnO:Al2O3 (3 wt.% Al2O3) ceramic target at room temperature. In order to explore the inhomogeneous property distribution across the substrate, the films were deposited with varied substrate-target distances (Ds) ranging from 2 cm to 9 cm. The experimental results obtained from four-point probe, spectrophotometer, scanning electron microscope, X-ray diffractometer and Auger electronic spectrometer were analyzed to explore the nonuniform property distribution of the obtained ZAO films. The results confirmed that the films' optoelectronic properties, crystallinity and surface morphology, etc., which were obtained from different substrate areas facing the target were remarkably different. It was revealed that the inhomogeneous property distribution was noticeably dependent on the Ds. It was also suggested that the great difference of electrical conductivity among films from different substrate areas could not be ascribed to the difference of chemical composition, but might be explained by the distinctive crystallinity correspondingly. Films from different substrate regions with distinctive electrical characteristics were either (0 0 2) or (1 1 0) textured.

  16. The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered ScxAl1-xN thin films

    NASA Astrophysics Data System (ADS)

    Mayrhofer, P. M.; Eisenmenger-Sittner, C.; Stöger-Pollach, M.; Euchner, H.; Bittner, A.; Schmid, U.

    2014-05-01

    The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior properties for applications in micro electro-mechanical systems devices. ScxAl1-xN thin films have been prepared by DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting a concentration range from x = 0 up to x = 0.15, the preparation conditions have been optimized by varying the Ar/N2 ratio in the sputtering gas. To incorporate an increasing Sc concentration, a higher Ar/N2 ratio has to be applied during the deposition process. Hence, the argon concentration in the sputtering gas becomes a crucial parameter for microstructure-related parameters. To determine phase purity, degree of c-axis orientation, lattice parameter, and grain size, the ScxAl1-xN thin films were investigated by techniques, such as scanning electron microscopy, transmission electron microscopy, and X-ray diffraction.

  17. Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

    SciTech Connect

    Telling, N. D.; Laan, G. van der; Georgieva, M. T.; Farley, N. R. S.

    2006-07-15

    An ultrahigh vacuum chamber that enables the in situ growth of thin films and multilayers by magnetron sputtering techniques is described. Following film preparation, x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements are performed by utilizing an in vacuum electromagnet. XMCD measurements on sputtered thin films of Fe and Co yield spin and orbital moments that are consistent with those obtained previously on films measured in transmission geometry and grown in situ by evaporation methods. Thin films of FeN prepared by reactive sputtering are also examined and reveal an apparent enhancement in the orbital moment for low N content samples. The advantages of producing samples for in situ XAS and XMCD studies by magnetron sputtering are discussed.

  18. Study on the effect of target on plasma parameters of magnetron sputtering discharge plasma

    SciTech Connect

    Saikia, P.; Kakati, B.; Saikia, B. K.

    2013-10-15

    In this study, the effect of magnetron target on different plasma parameters of Argon/Hydrogen (Ar - H{sub 2}) direct current (DC) magnetron discharge is examined. Here, Copper (Cu) and Chromium (Cr) are used as magnetron targets. The value of plasma parameters such as electron temperature (kT{sub e}), electron density (N{sub e}), ion density (N{sub i}), degree of ionization of Ar, and degree of dissociation of H{sub 2} for both the target are studied as a function of input power and hydrogen content in the discharge. The plasma parameters are determined by using Langmuir probe and Optical emission spectroscopy. On the basis of the different reactions in the gas phase, the variation of plasma parameters and sputtering rate are explained. The obtained results show that electron and ion density decline with gradual addition of Hydrogen in the discharge and increase with rising input power. It brings significant changes on the degree of ionization of Ar and dissociation of H{sub 2}. The enhanced value of electron density (N{sub e}), ion density (N{sub i}), degree of Ionization of Ar, and degree of dissociation of H{sub 2} for Cr compared to Cu target is explained on the basis of it's higher Ion Induced Secondary Electron Emission Coefficient (ISEE) value.

  19. Model predictive control of bidirectional isolated DC-DC converter for energy conversion system

    NASA Astrophysics Data System (ADS)

    Akter, Parvez; Uddin, Muslem; Mekhilef, Saad; Tan, Nadia Mei Lin; Akagi, Hirofumi

    2015-08-01

    Model predictive control (MPC) is a powerful and emerging control algorithm in the field of power converters and energy conversion systems. This paper proposes a model predictive algorithm to control the power flow between the high-voltage and low-voltage DC buses of a bidirectional isolated full-bridge DC-DC converter. The predictive control algorithm utilises the discrete nature of the power converters and predicts the future nature of the system, which are compared with the references to calculate the cost function. The switching state that minimises the cost function is selected for firing the converter in the next sampling time period. The proposed MPC bidirectional DC-DC converter is simulated with MATLAB/Simulink and further verified with a 2.5 kW experimental configuration. Both the simulation and experimental results confirm that the proposed MPC algorithm of the DC-DC converter reduces reactive power by avoiding the phase shift between primary and secondary sides of the high-frequency transformer and allow power transfer with unity power factor. Finally, an efficiency comparison is performed between the MPC and dual-phase-shift-based pulse-width modulation controlled DC-DC converter which ensures the effectiveness of the MPC controller.

  20. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-03-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  1. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  2. c-axis inclined ZnO films for shear-wave transducers deposited by reactive sputtering using an additional blind

    SciTech Connect

    Link, M.; Schreiter, M.; Weber, J.; Gabl, R.; Pitzer, D.; Primig, R.; Wersing, W.; Assouar, M.B.; Elmazria, O.

    2006-03-15

    This article reports on the growth and characterization of polycrystalline ZnO films having c axis inclined up to 16 deg. with respect to the substrate normal. These films allow the excitation of shear and longitudinal waves with comparable electromechanical coupling constants and are of significant interest for thin film bulk acoustic resonators (FBARs). The films are deposited on silicon substrates covered by Al{sub 2}O{sub 3} and SiO{sub 2} buffer layers under low pressure using a modified reactive dc-pulsed magnetron sputtering system. A blind has been positioned between target and substrate, allowing oblique particle incidence without tilting the wafer. The study of structural properties of the deposited ZnO films by x-ray diffraction and scanning electron microscopy has permitted to show the presence of the inclined structure. Electromechanical coupling constants K up to 13% have been extracted for shear-mode excitation using highly overmoded FBARs.

  3. DC source assemblies

    DOEpatents

    Campbell, Jeremy B; Newson, Steve

    2013-02-26

    Embodiments of DC source assemblies of power inverter systems of the type suitable for deployment in a vehicle having an electrically grounded chassis are provided. An embodiment of a DC source assembly comprises a housing, a DC source disposed within the housing, a first terminal, and a second terminal. The DC source also comprises a first capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the first terminal. The DC source assembly further comprises a second capacitor having a first electrode electrically coupled to the housing, and a second electrode electrically coupled to the second terminal.

  4. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    SciTech Connect

    Zhang, Xiaozhi; Yue, Zhenxing Meng, Siqin; Yuan, Lixin

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  5. Magnetron cathodes in plasma electrode Pockels cells

    DOEpatents

    Rhodes, M.A.

    1995-04-25

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal. 5 figs.

  6. Magnetron cathodes in plasma electrode pockels cells

    DOEpatents

    Rhodes, Mark A.

    1995-01-01

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating. pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal.

  7. Recirculating planar magnetrons: simulations and experiment

    SciTech Connect

    Franzi, Matthew; Gilgenbach, Ronald; French, David; Lau, Y.Y.; Simon, David; Hoff, Brad; Luginsland, John W.

    2011-07-01

    The Recirculating Planar Magnetron (RPM) is a novel crossed-field device whose geometry is expected to reduce thermal load, enhance current yield as well as ease the geometric limitations in scaling to high RF frequencies as compared to the conventional cylindrical magnetrons. The RPM has two different adaptations: A. Axial B field and radial E field; B. Radial B field and axial E field. The preliminary configuration (A) to be used in experiments at the University of Michigan consists of two parallel planar sections which join on either end by cylindrical regions to form a concentric extruded ellipse. Similar to conventional magnetrons, a voltage across the AK gap in conjunction with an axial magnetic field provides the electrons with an ExB drift. The device is named RPM because the drifting electrons recirculate from one planar region to the other. The drifting electrons interact with the resonantly tuned slow wave structure on the anode causing spoke formation. These electron spokes drive a RF electric field in the cavities from which RF power may be extracted to Waveguides. The RPM may be designed in either a conventional configuration with the anode on the outside, for simplified extraction, or as an inverted magnetron with the anode at the inner conductor, for fast start-up. Currently, experiments at the Pulsed Power and Microwave Laboratory at the University of Michigan are in the setup and design phase. A conventional RPM with planar cavities is to be installed on the Michigan Electron Long Beam Accelerator (MELBA) and is anticipated to operate at -200kV, 0.2T with a beam current of 1-10 kA at 1GHz. The conventional RPM consists of 12 identical planar cavities, 6 on each planar side, with simulated quality factor of 20.

  8. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  9. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  10. Radiation effects on DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Zhang, Dexin; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2000-01-01

    DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

  11. Drastic improvement in the S-band relativistic magnetron operation

    SciTech Connect

    Sayapin, A.; Hadas, Y.; Krasik, Ya. E.

    2009-08-17

    The superior operation of a S-band relativistic magnetron powered by a Linear Induction Accelerator with {<=}400 kV, {<=}4 kA, and {approx}150 ns output pulses was revealed when the magnetron was coupled with a resonance load and a part of the generated microwave power stored in the resonator was reflected back to the magnetron. It is shown that, under optimal conditions, the efficiency of the magnetron operation increases by {approx}40% and the generated microwave power reaches the power of the electron beam.

  12. Drastic improvement in the S-band relativistic magnetron operation

    NASA Astrophysics Data System (ADS)

    Sayapin, A.; Hadas, Y.; Krasik, Ya. E.

    2009-08-01

    The superior operation of a S-band relativistic magnetron powered by a Linear Induction Accelerator with ≤400 kV, ≤4 kA, and ˜150 ns output pulses was revealed when the magnetron was coupled with a resonance load and a part of the generated microwave power stored in the resonator was reflected back to the magnetron. It is shown that, under optimal conditions, the efficiency of the magnetron operation increases by ˜40% and the generated microwave power reaches the power of the electron beam.

  13. Satellite Power System (SPS) magnetron tube assessment study

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1981-01-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  14. Secondary-electrons-induced cathode plasma in a relativistic magnetron

    SciTech Connect

    Queller, T.; Gleizer, J. Z.; Krasik, Ya. E.

    2012-11-19

    Results of time- and space-resolved spectroscopic studies of cathode plasma during a S-band relativistic magnetron operation and a magnetically insulated diode having an identical interelectrode gap are presented. It was shown that in the case of the magnetron operation, one obtains an earlier, more uniform plasma formation due to energetic electrons' interaction with the cathode surface and ionization of desorbed surface monolayers. No differences were detected in the cathode's plasma temperature between the magnetron and the magnetically insulated diode operation, and no anomalous fast cathode plasma expansion was observed in the magnetron at rf power up to 350 MW.

  15. Satellite Power System (SPS) magnetron tube assessment study

    NASA Astrophysics Data System (ADS)

    Brown, W. C.

    1981-02-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  16. A TEM study of the structure of magnetron sputtered chromium diboride coatings

    NASA Astrophysics Data System (ADS)

    Audronis, M.; Kelly, P. J.; Leyland, A.; Matthews, A.

    2006-02-01

    Chromium diboride thin films possess desirable combinations of properties, which are attractive for a wide range of potential industrial applications. However, these properties are strongly dependent on the deposition process and parameters. In this paper, CrB2 coatings deposited by DC and pulsed-DC magnetron sputtering of loosely packed blended powder targets are characterised by transmission electron microscopy techniques (electron diffraction and bright-field/dark-field imaging). Coatings with an extremely fine, nanocolumnar structure were observed. DC sputter deposited coatings exhibit a dense, short range ordered structure, while the pulsed-DC deposited coatings are defect-free, crystalline and show strong preferred orientation. A small amount of contamination of the interfacial sub-layers of the coatings by oxygen (from the target material) was found to affect the structure by suppressing growth of nanocolumns and promoting equiaxial grains of about 4-8 nanometres size, in the first ~70 nanometres of coating, close to the substrate interface. The majority of the coating however remains nanocolumnar.

  17. DC-to-DC switching converter

    NASA Technical Reports Server (NTRS)

    Cuk, Slobodan M. (Inventor); Middlebrook, Robert D. (Inventor)

    1980-01-01

    A dc-to-dc converter having nonpulsating input and output current uses two inductances, one in series with the input source, the other in series with the output load. An electrical energy transferring device with storage, namely storage capacitance, is used with suitable switching means between the inductances to DC level conversion. For isolation between the source and load, the capacitance may be divided into two capacitors coupled by a transformer, and for reducing ripple, the inductances may be coupled. With proper design of the coupling between the inductances, the current ripple can be reduced to zero at either the input or the output, or the reduction achievable in that way may be divided between the input and output.

  18. Radiation Effects on DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Zhang, De-Xin; AbdulMazid, M. D.; Attia, John O.; Kankam, Mark D. (Technical Monitor)

    2001-01-01

    In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25

  19. Transparent conductive Nb-doped TiO2 films deposited by reactive dc sputtering using Ti-Nb alloy target, precisely controlled in the transition region using impedance feedback system

    NASA Astrophysics Data System (ADS)

    Oka, Nobuto; Sanno, Yuta; Jia, Junjun; Nakamura, Shin-ichi; Shigesato, Yuzo

    2014-05-01

    In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO2 (Nb:TiO2) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10-4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10-4 Ω cm) was achieved for Nb:TiO2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO2 films precisely to achieve desirable properties for each industrial application.

  20. DC sputtered W-doped VO2 thermochromic thin films for smart windows with active solar control.

    PubMed

    Batista, C; Ribeiro, R; Carneiro, J; Teixeira, V

    2009-07-01

    Doped VO2 thin films, with different W at.% and consequent dissimilar transition temperatures, were successfully deposited onto SiO2-coated float-glass substrates by reactive direct current (DC) magnetron sputtering. Structural analyses have shown, for undoped films, single phase VO2(M) films with c-axis (002) direction as the preferred crystal orientation. The addition of tungsten into the VO2 solid solution favored the crystallization in the (011) direction which became dominant above a critical level of dopant concentration. The surface morphology of pure VO2 films revealed elongated grains oriented within the film plane. The doped films evidenced an increased tendency to be oriented out of the film plane which has resulted in increased roughness levels. The doping methodology associated with optimized processing conditions allowed the production of W-doped VO2 films with reduced transition temperatures, from 63 down to 28 degrees C, and maximum transmittances at the visible region ranging 40%. The relationship between tungsten content in the film and consequent transition temperature expressed a linear behavior. PMID:19916434

  1. Multilevel DC link inverter

    DOEpatents

    Su, Gui-Jia

    2003-06-10

    A multilevel DC link inverter and method for improving torque response and current regulation in permanent magnet motors and switched reluctance motors having a low inductance includes a plurality of voltage controlled cells connected in series for applying a resulting dc voltage comprised of one or more incremental dc voltages. The cells are provided with switches for increasing the resulting applied dc voltage as speed and back EMF increase, while limiting the voltage that is applied to the commutation switches to perform PWM or dc voltage stepping functions, so as to limit current ripple in the stator windings below an acceptable level, typically 5%. Several embodiments are disclosed including inverters using IGBT's, inverters using thyristors. All of the inverters are operable in both motoring and regenerating modes.

  2. Turbulent electron beams generated by magnetron injection guns

    NASA Astrophysics Data System (ADS)

    Kalinin, Yu. A.; Starodubov, A. V.; Mushtakov, A. V.

    2011-06-01

    A detailed experimental investigation of oscillators based on a magnetron injection gun is carried out. Experimental data show that such oscillators offer a considerable advantage over other similar devices; namely, they are capable of generating powerful wideband noiselike microwave oscillations. This is because magnetron injection guns generate turbulent electron beams at their exit.

  3. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  4. The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films

    SciTech Connect

    Bikowski, Andre; Welzel, Thomas; Ellmer, Klaus

    2013-06-17

    In order to study the impact of negative oxygen ion bombardment on the electronic transport properties of ZnO:Al films, a systematic magnetron sputtering study from ceramic targets with excitation frequencies from DC to 27 MHz, accompanied by strongly varying discharge voltages, has been performed. Higher plasma excitation frequencies significantly improve the transport properties of ZnO:Al films. The effect of the bombardment of the films by energetic particles (negative oxygen ions) can be explained by the dynamic equilibrium between the formation of acceptor-like oxygen interstitials compensating the extrinsic donors and the self-annealing of the interstitial defects at higher deposition temperatures.

  5. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    SciTech Connect

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  6. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    SciTech Connect

    Anders, Andre

    2010-07-15

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  7. Radiation-Tolerant DC-DC Converters

    NASA Technical Reports Server (NTRS)

    Skutt, Glenn; Sable, Dan; Leslie, Leonard; Graham, Shawn

    2012-01-01

    A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).

  8. The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

    SciTech Connect

    Mayrhofer, P. M.; Bittner, A.; Schmid, U.; Eisenmenger-Sittner, C.; Stöger-Pollach, M.

    2014-05-21

    The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior properties for applications in micro electro-mechanical systems devices. Sc{sub x}Al{sub 1−x}N thin films have been prepared by DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting a concentration range from x = 0 up to x = 0.15, the preparation conditions have been optimized by varying the Ar/N{sub 2} ratio in the sputtering gas. To incorporate an increasing Sc concentration, a higher Ar/N{sub 2} ratio has to be applied during the deposition process. Hence, the argon concentration in the sputtering gas becomes a crucial parameter for microstructure-related parameters. To determine phase purity, degree of c-axis orientation, lattice parameter, and grain size, the Sc{sub x}Al{sub 1−x}N thin films were investigated by techniques, such as scanning electron microscopy, transmission electron microscopy, and X-ray diffraction.

  9. Recirculating Planar Magnetron Modeling and Experiments

    NASA Astrophysics Data System (ADS)

    Franzi, Matthew; Gilgenbach, Ronald; Hoff, Brad; French, Dave; Lau, Y. Y.

    2011-10-01

    We present simulations and initial experimental results of a new class of crossed field device: Recirculating Planar Magnetrons (RPM). Two geometries of RPM are being explored: 1) Dual planar-magnetrons connected by a recirculating section with axial magnetic field and transverse electric field, and 2) Planar cathode and anode-cavity rings with radial magnetic field and axial electric field. These RPMs have numerous advantages for high power microwave generation by virtue of larger area cathodes and anodes. The axial B-field RPM can be configured in either the conventional or inverted (faster startup) configuration. Two and three-dimensional EM PIC simulations show rapid electron spoke formation and microwave oscillation in pi-mode. Smoothbore prototype axial-B RPM experiments are underway using the MELBA accelerator at parameters of -300 kV, 1-20 kA and pulselengths of 0.5-1 microsecond. Implementation and operation of the first RPM slow wave structure, operating at 1GHz, will be discussed. Research supported by AFOSR, AFRL, L-3 Communications, and Northrop Grumman. Done...processed 1830 records...17:52:57 Beginning APS data extraction...17:52:57

  10. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1995-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  11. Forback DC-to-DC converter

    NASA Technical Reports Server (NTRS)

    Lukemire, Alan T. (Inventor)

    1993-01-01

    A pulse-width modulated DC-to-DC power converter including a first inductor, i.e. a transformer or an equivalent fixed inductor equal to the inductance of the secondary winding of the transformer, coupled across a source of DC input voltage via a transistor switch which is rendered alternately conductive (ON) and nonconductive (OFF) in accordance with a signal from a feedback control circuit is described. A first capacitor capacitively couples one side of the first inductor to a second inductor which is connected to a second capacitor which is coupled to the other side of the first inductor. A circuit load shunts the second capacitor. A semiconductor diode is additionally coupled from a common circuit connection between the first capacitor and the second inductor to the other side of the first inductor. A current sense transformer generating a current feedback signal for the switch control circuit is directly coupled in series with the other side of the first inductor so that the first capacitor, the second inductor and the current sense transformer are connected in series through the first inductor. The inductance values of the first and second inductors, moreover, are made identical. Such a converter topology results in a simultaneous voltsecond balance in the first inductance and ampere-second balance in the current sense transformer.

  12. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  13. Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.; Ndione, Paul F.; Perkins, John D.; Gennett, Thomas; van Hest, Maikel F. A. M.; Shaheen, Sean E.; Ginley, David S.; Berry, Joseph J.

    2012-05-01

    The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga2O3 (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 ± 200 S/cm, 3920 ± 600 S/cm, and 3610 ± 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in χ and broadening of optical gap with increased carrier concentration via more efficient doping. Independent of the total sputtering power, all films grown with 50% or higher RF power portion resulted in high mobility (˜28 ± 1 cm2/Vs), consistent with observed improvements in crystallographic texture. All films showed optical transmittance of ˜90% in the visible range.

  14. Control of particle flux and energy on substrate in an inverted cylindrical magnetron for plasma PVD

    NASA Astrophysics Data System (ADS)

    Todoran, A.; Mantel, M.; Bés, A.; Vachey, C.; Lacoste, A.

    2014-12-01

    Inverted cylindrical magnetrons (ICMs) are often used in dc, pulsed dc or mid-frequency ac mode for coating complex objects with thin films deposited by plasma PVD. Since in such a configuration the substrate is inherently surrounded by the target and hence by the plasma, the energy flux of the impinging particles represents the main contribution to the substrate heating. This can readily constitute a limiting factor in the deposition process, especially when it is not possible to cool and bias the substrate. This work concerns a dc-driven ICM configuration subjected to several constraints: not only is the substrate surface area small by comparison to the cathode surface area, but its imposed potential is the ground one, thus itself constituting the anode surface of the considered setup. Several important substrate heating factors are highlighted and, in order to reduce the most prominent of them, a means to raise the plasma potential is proposed. This is achieved by positively polarizing two additional electrodes with respect to the ground. This additional surface generates a redistribution of the current and consequently regulates the electron flux on the substrate. The results are shown as a function of bias applied on the auxiliary electrodes and discussed in terms of the impact on the substrate heating.

  15. Structure evolution of magnetron sputtered TiO{sub 2} thin films

    SciTech Connect

    Mraz, Stanislav; Schneider, Jochen M.

    2011-01-15

    The structure evolution of TiO{sub 2} thin films deposited by rf and dc magnetron sputtering onto nonintentionally heated, floating, glass and Si (100) substrates was investigated. As the total pressure was varied from 0.15 to 4.0 Pa, corresponding to the pressure-distance product values from 10.5 to 280 Pa mm, rutile, anatase, and a mixture thereof were deposited. The pressure-distance induced changes in ion energy were quantified by probing the ion energy distribution functions. The ion energy during synthesis was additionally varied by applying a substrate bias potential ranging from floating to -100 V revealing a similar phase formation characteristic. While the structure evolution of the TiO{sub 2} thin films reported in the literature exhibits a rather complex dependence on the process parameters, a simple correlation between the structure evolution and the ratio between the ion energy flux and the deposition flux was identified here. Phase pure anatase films were grown below 540 eV/Ti atom and phase pure rutile films were grown above 1000 eV/Ti atom. The here presented data suggest that the ratio between the ion energy flux and the deposition flux ratio defines the phase formation of TiO{sub 2} thin films during magnetron sputtering.

  16. Inhomogeneity of phase transition in lead titanate thin films formed by magnetron layer-by-layer deposition

    NASA Astrophysics Data System (ADS)

    Iljinas, Aleksandras; Stankus, Vytautas; Čyvienė, Jurgita; Abakevičienė, Brigita

    2015-10-01

    The formation of deposited ferroelectric perovskite PbTiO3 thin films using layer-by-layer reactive magnetron sputtering was investigated in this work. Deposition rates of each layer (PbO and TiO2) for 7.2 and 9.2 nm/min, respectively, were chosen there. Silicon (110) substrate with the heater was moved periodically and parallel to the magnetron cathodes during deposition. The heater temperature (380 °C-700 °C) has influence on the stoichiometry of thin films. Perovskite phase of lead titanate was not obtained without post annealing. The reasons for this are discussed in the work. The results of the structure of thin layers deposited on silicon substrates at 380 °C and annealed for one hour at 700 °C in air have shown that a pure perovskite phase of PbTiO3 is formed there.

  17. Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 deg. C

    SciTech Connect

    Vlcek, Jaroslav; Hreben, Stanislav; Kalas, Jiri; Capek, Jiri; Zeman, Petr; Cerstvy, Radomir; Perina, Vratislav; Setsuhara, Yuichi

    2008-09-15

    Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si-B or B{sub 4}C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 deg. C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B{sub 4}C-Si target, 50% N{sub 2}+50% Ar gas mixture), possessing a composition (in at. %) Si{sub 32-34}B{sub 9-10}C{sub 2-4}N{sub 49-51} with a low (less than 5 at. %) total content of hydrogen and oxygen, exhibited extremely high oxidation resistance in air at elevated temperatures (even above 1500 deg. C). Formation of protective surface layers (mainly composed of Si and O) was proved by high-resolution transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction measurements after oxidization. Amorphous structure of the Si-B-C-N films was maintained under the oxidized surface layers after annealing in air up to 1700 deg. C (a limit imposed by thermogravimetric analysis in oxidative atmospheres)

  18. Magnetron sputtering system for coatings deposition with activation of working gas mixture by low-energy high-current electron beam

    NASA Astrophysics Data System (ADS)

    Gavrilov, N. V.; Kamenetskikh, A. S.; Men'shakov, A. I.; Bureyev, O. A.

    2015-11-01

    For the purposes of efficient decomposition and ionization of the gaseous mixtures in a system for coatings deposition using reactive magnetron sputtering, a low-energy (100-200 eV) high-current electron beam is generated by a grid-stabilized plasma electron source. The electron source utilizes both continuous (up to 20 A) and pulse-periodic mode of discharge with a self-heated hollow cathode (10-100 A; 0.2 ms; 10-1000 Hz). The conditions for initiation and stable burning of the high-current pulse discharge are studied along with the stable generation of a low-energy electron beam within the gas pressure range of 0.01 - 1 Pa. It is shown that the use of the electron beam with controllable parameters results in reduction of the threshold values both for the pressure of gaseous mixture and for the fluxes of molecular gases. Using such a beam also provides a wide range (0.1-10) of the flux density ratios of ions and sputtered atoms over the coating surface, enables an increase in the maximum pulse density of ion current from plasma up to 0.1 A, ensures an excellent adhesion, optimizes the coating structure, and imparts improved properties to the superhard nanocomposite coatings of (Ti,Al)N/a-Si3N4 and TiC/-a-C:H. Mass-spectrometric measurements of the beam-generated plasma composition proved to demonstrate a twofold increase in the average concentration of N+ ions in the Ar-N2 plasma generated by the high-current (100 A) pulsed electron beam, as compared to the dc electron beam.

  19. Dynamics of Magnetic Insulation Violation in Smooth-bore Magnetrons

    NASA Astrophysics Data System (ADS)

    Agafonov, A. V.; Fedorov, V. M.; Tarakanov, V. P.

    1997-05-01

    The efficiency of large and high-power magnetrons of GW power levels is less than 30% and an inherent pulse-length and repetition rate limitations seems to exist because of use of explosive field emission. Another approach is the development of low voltage high-efficiency magnetrons utilizing a secondary emission magnetron array with high repetition rate. The numerical model of nonstationary nonuniform secondary electron emission from a cathode surface has been developed. The results of the first steps in computer simulations of an electron cloud formation inside a smooth-bore magnetron under the condition of the back-bombardement instability (BBI) are presented. A mechanism of the violation of the magnetic insulation are considered. Calculations have been performed for a coaxial smooth-bore magnetron and for magnetrons with different types of azimuthal inhomogeneities which could help the grow of BBI, and for magnetrons of different aspect ratios. The results of computer simulation are compared with experimental data. The main calculations of the beam dynamics were carried out with PIC-code KARAT.

  20. Magnetron sputtering for the production of EUV mask blanks

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

    2015-03-01

    Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

  1. Intelligent dc-dc Converter Technology Developed and Tested

    NASA Technical Reports Server (NTRS)

    Button, Robert M.

    2001-01-01

    The NASA Glenn Research Center and the Cleveland State University have developed a digitally controlled dc-dc converter to research the benefits of flexible, digital control on power electronics and systems. Initial research and testing has shown that conventional dc-dc converters can benefit from improved performance by using digital-signal processors and nonlinear control algorithms.

  2. Antireflection coatings for deep ultraviolet optics deposited by magnetron sputtering from Al targets.

    PubMed

    Liao, Bo-Huei; Lee, Cheng-Chung

    2011-04-11

    We introduce an innovative technique for the deposition of fluorine doped oxide (F:Al(2)O(3)) films by DC pulse magnetron sputtering from aluminum targets at room temperature. There was almost no change in transmittance even after the film was exposed to air for two weeks. Its refractive index was around 1.69 and the extinction coefficient was smaller than 1.9 × 10(-4) at 193 nm. An AlF(3)/F:Al(2)O(3) antireflection coating was deposited on both sides of a quartz substrate. A high transmittance of 99.32% was attained at the 193 nm wavelength. The cross-sectional morphology showed that the surface of the multilayer films was smooth and there were no columnar or porous structures. PMID:21503058

  3. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  4. Investigation on low thermal emittance of Al films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ning, Yuping; Wang, Wenwen; Sun, Ying; Wu, Yongxin; Liu, Yingfang; Man, Hongliang; Wang, Cong; Zhang, Yong; Zhao, Shuxi; Tomasella, Eric; Bousquet, Angélique

    2016-03-01

    A series of Al films with different thicknesses were deposited on polished stainless steel by direct current (DC) magnetron sputtering as a metal IR-reflector layer in solar selective absorbing coating (SSAC). The effects of the film thickness and the temperature on the thermal emittance of the Al films are studied. An optimal thickness 78 nm of the Al film for the lowest total thermal emittance is obtained. The thermal emittance of the optimal Al film keeps close to 0.02 from 25 °C to 400 °C, which are low enough to satisfy the optical requirements in SSAC. The optical constants of the Al film are deduced by fitting the reflectance and transmission spectra using SCOUT software.

  5. Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

    SciTech Connect

    Thoegersen, Annett; Rein, Margrethe; Monakhov, Edouard; Mayandi, Jeyanthinath; Diplas, Spyros

    2011-06-01

    The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO{sub x} was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO{sub x} interface layer thickness.

  6. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  7. Growth of thick, crystalline material using dc-magnetron sputtering in Mag1 deposition chamber

    SciTech Connect

    Bajt, S; Alameda, J; Baker, S; Taylor, J S

    2005-11-02

    We demonstrated dense, non-columnar growth of thick Mo films by moving the substrates in and out of the plasma thus allowing the surface reconstruction and by interrupting the growth with Si layers. The multilayers made this way have very smooth surface, about 1.3 nm rms high spatial frequency roughness, while also maintaining the periodicity of a reflective coating. These preliminary results hint that the surface reconstruction is an important physical process that controls the growth mechanisms. Further studies, combined with theoretical modeling, are essential to further our knowledge on how to predict and control desired microstructure for different materials.

  8. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, M.; Johnson, R.P.; Popovic, M.; Moretti, A.; /Fermilab

    2009-05-01

    Magnetrons are low-cost highly-efficient microwave sources, but they have several limitations, primarily centered about the phase and frequency stability of their output. When the stability requirements are low, such as for medical accelerators or kitchen ovens, magnetrons are the very efficient power source of choice. But for high energy accelerators, because of the need for frequency and phase stability - proton accelerators need 1-2 degrees source phase stability, and electron accelerators need .1-.2 degrees of phase stability - they have rarely been used. We describe a novel variable frequency cavity technique which will be utilized to phase and frequency lock magnetrons.

  9. Design and Analysis of the Main AC/DC Converter System for ITER

    NASA Astrophysics Data System (ADS)

    Sheng, Zhicai; Xu, Liuwei; Fu, Peng

    2012-04-01

    A design of the main AC/DC converter system for ITER is described and the configuration of the main AC/DC converters is presented. To reduce the reactive power absorbed from the converter units, the main AC/DC converters are designed to be series-connected and work in a sequential mode. The structure of the regulator of the converter system is described. A simulation model was built up for the PSCAD/EMTDC code, and the design was validated accordingly. Harmonic analysis and reactive power calculation of the converters units are presented. The results reveal the advantage of sequential control in reducing reactive power and harmonics.

  10. The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Treverrow, B.; Ross, A. E.; Falconer, I. S.; Kondyurin, A.; McCulloch, D. G.; Partridge, J. G.; McKenzie, D. R.; Bilek, M. M. M.

    2015-06-01

    In conventional reactive magnetron sputtering, target poisoning frequently leads to an instability that requires the reactive gas flow rate to be actively regulated to maintain a constant composition of the deposited layers. Here we demonstrate that the pulse length in high power impulse magnetron sputtering (HiPIMS) is important for determining the surface conditions on the target that lead to poisoning. By increasing the pulse length, a smooth transition can be achieved from a poisoned target condition (short pulses) to a quasi-metallic target condition (long pulses). Appropriate selection of pulse length eliminates the need for active regulation, enabling stable reactive magnetron sputter deposition of stoichiometric amorphous hafnium oxide (HfO2) from a Hf target. A model is presented for the reactive HiPIMS process in which the target operates in a partially poisoned mode with a distribution of oxide on its surface that depends on the pulse length.

  11. Spoke rotation reversal in magnetron discharges of aluminium, chromium and titanium

    NASA Astrophysics Data System (ADS)

    Hecimovic, A.; Maszl, C.; Schulz-von der Gathen, V.; Böke, M.; von Keudell, A.

    2016-06-01

    The rotation of localised ionisation zones, i.e. spokes, in magnetron discharge are frequently observed. The spokes are investigated by measuring floating potential oscillations with 12 flat probes placed azimuthally around a planar circular magnetron. The 12-probe setup provides sufficient temporal and spatial resolution to observe the properties of various spokes, such as rotation direction, mode number and angular velocity. The spokes are investigated as a function of discharge current, ranging from 10 mA (current density 0.5 mA cm-2) to 140 A (7 A cm-2). In the range from 10 mA to 600 mA the plasma was sustained in DC mode, and in the range from 1 A to 140 A the plasma was pulsed in high-power impulse magnetron sputtering mode. The presence of spokes throughout the complete discharge current range indicates that the spokes are an intrinsic property of a magnetron sputtering plasma discharge. The spokes may disappear at discharge currents above 80 A for Cr, as the plasma becomes homogeneously distributed over the racetrack. Up to discharge currents of several amperes (the exact value depends on the target material), the spokes rotate in a retrograde \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 0.2-4 km s-1. Beyond a discharge current of several amperes, the spokes rotate in a \\mathbf{E}× \\mathbf{B} direction with angular velocity in the range of 5-15 km s-1. The spoke rotation reversal is explained by a transition from Ar-dominated to metal-dominated sputtering that shifts the plasma emission zone closer to the target. The spoke itself corresponds to a region of high electron density and therefore to a hump in the electrical potential. The electric field around the spoke dominates the spoke rotation direction. At low power, the plasma is further away from the target and it is dominated by the electric field to the anode, thus retrograde \\mathbf{E}× \\mathbf{B} rotation. At high power, the plasma is closer to the target and it is

  12. Ordering of Fine Particles in a Planar Magnetron Plasma

    SciTech Connect

    Hayashi, Y.; Takahashi, K.; Totsuji, H.; Ishihara, O.; Sato, N.; Watanabe, Y.; Adachi, S.

    2008-09-07

    Fine particles injected in a planar magnetron were pushed upward by diffusible plasma, leading to being suspended by the force balance with the gravity and forming three-dimensional structures on the two-dimensional structure formed by particle strings.

  13. The Qualitative Magnetron -- Part of a Computer-Based Tutorial

    NASA Astrophysics Data System (ADS)

    Mead, William C.; Browman, Andrew A.; Silbar, Richard R.

    1998-10-01

    The magnetron is a ubiquitous electromagnetic device, widely used in radar and microwave oven applications. However, it is not usually a part of a general physics curriculum and many practicing physicists have only a vague notion of how it works. We are developing a set of computer-based, self-paced tutorials on particle accelerators that targets a broad audience, including undergraduate science majors and industrial technicians. The magnetron is covered in our module Motion in Electromagnetic Fields as an example of a crossed-field device. We originally expected this to be an advanced topic at the graduate student level. We were pleased to find we could give a satisfying description of how the magnetron works at an introductory level, using pictures and words, without equations. This talk will present our qualitative discussion of the magnetron, direct to you from the computer screen.

  14. Performance and test results of a regulated magnetron pulser

    SciTech Connect

    Rose, C.R.; Warren, D.S.

    1998-12-31

    This paper describes the test results and performance of a 5.0-kV, 750-mA, regulated current pulser used to drive an Hitachi model 2M130 2,425-MHz magnetron. The magnetron is used to modulate the plasma in a particle accelerator injector. In this application, precise and stable rf power is crucial to extract a stable and accurate particle beam. A 10-kV high-voltage triode vacuum tube with active feedback is used to control the magnetron current and output rf power. The pulse width may be varied from as little as ten microseconds to continuous duty by varying the width of a supplied gate pulse. The output current level can be programmed between 10 and 750 mA. Current regulation and accuracy are better than 1%. The paper discusses the overall performance of the pulser and magnetron including anode current and rf power waveforms, linearity compliance, and vacuum tube performance.

  15. Satellite power system (SPS) magnetron tube assessment study

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Taks performed to extend the data base and to define a technology development program for the magnetron directional amplifier for the SPS are reviewed. These include: (1) demonstrating the tracking of phase and amplitude of the microwave output to phase and amplitude references; (2) expanding the range of power over which the directional amplifier will operate; (3)recognizing the importance of amplitude control in overall system design and in simplifying power conditioning; (4) developing a preliminary design for the overall architecture of the power module; (5) demonstrating magnetron starting using the amplitude control system; (6) mathematically modelling and performing a computerized study of the pyrolytic graphite radiating fin; (7) defining the mass of the magnetic circuit for the SPS tube; (8) noise measurement; (9) achieving harmonic suppression by notch reflection filters; (10) estimating the mass of the transmitting antenna; (11) developing a magnetron package with power generation, phase control, and power condition functions; and (12) projecting magnetron package characteristics.

  16. Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

    SciTech Connect

    Sethi, Guneet; Sunal, Paul; Horn, Mark W.; Lanagan, Michael T.

    2009-05-15

    Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2{theta} scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr{sub 2}O. When the sputtering oxygen content of these films is increased above 25%, monoclinic-ZrO{sub 2} phase is stabilized in the films and the deposition rate decreases. However, in the case of rf sputtering, an additional peak corresponding to tetragonal phase of ZrO{sub 2} is observed. The sputtering parameters were related to physical parameters such as sputtering mode, ion energy, and substrate temperature, which influence crystallinity.

  17. Thermally stable narrow-bandpass filter prepared by reactive ion-assisted sputtering.

    PubMed

    Tsai, R Y; Chang, C S; Chu, C W; Chen, T; Dai, F; Lin, D; Yan, S; Chang, A

    2001-04-01

    Thermal stabilities of three-cavity narrow-bandpass (NB) filters with high-index half-wave spacers and 78-102 layers of Ta(2)O(5) and SiO(2) prepared by reactive ion-assisted bipolar direct-current (dc) magnetron sputtering of tantalum and silicon targets, respectively, were investigated. Pure argon and pure oxygen were used as the sputtering gas and the reactant, respectively. The oxygen gas was introduced and ionized through the ion gun and toward the unheated BK7 glass substrate. The refractive indices of single-layer Ta(2)O(5) and SiO(2) films were 2.1 and 1.45, respectively, at 1550 nm, which were comparable with those of films prepared by other ion-assisted coating techniques. The moisture-resistant properties of the films were excellent as evidenced from the water-immersion test, implying that the packing density of the films was close to that of their bulk materials. The temperature-dependant wavelength shifts of the NB filters were <3 x 10(-3) nm/ degrees C at temperatures of <75 degrees C, indicating that the temperature-induced wavelength shift of the filter was <0.15 nm when the temperatures were raised from room temperature to 75 degrees C, which was compliant with Bellcore GR-1209-CORE generic requirements of NB filters used for optical-fiber communication systems. PMID:18357152

  18. Low-temperature deposition of low resistivity ZnSe films by reactive sputtering

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.; Nouhi, A.

    1986-01-01

    The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.

  19. Deposition and Properties of Reactively Sputtered Ruthenium Dioxide Thin Films as an Electrode for Ferroelectric Capacitors

    NASA Astrophysics Data System (ADS)

    Lee, Jeong-gun; Min, Suk-ki; Choh, Sung

    1994-12-01

    Ruthenium dioxide (RuO2) films are studied for use as a bottom electrode of the (Ba, Sr)TiO3 thin-film capacitor. RuO2 films have been deposited by reactive DC magnetron sputtering of ruthenium at a relatively low sputtering power. Stoichiometric RuO2 films are obtained at oxygen partial pressures as low as 0.6 mTorr. The properties of the films have been investigated using techniques such as Rutherford backscattering spectrometry, Auger electron spectrometry, X-ray diffraction, and scanning electron microscopy. The oxygen composition in as-deposited RuOx films increases from 2.0 to 2.4 with the increase of initial O2 partial pressure from 1.2 to 5.6 mTorr at a sputtering power of 200 W. The films deposited under low oxygen partial pressures followed by annealing show preferential crystal growth in the [110] direction, whereas those deposited in high oxygen partial pressures show growth in the [101] direction. A resistivity of 65 µΩ·cm is obtained after annealing at 800°C. Even after high-temperature deposition and subsequent annealing processes, clear interfaces between (Ba, Sr)TiO3 and RuO2 films are obtained.

  20. RISK D/C

    NASA Technical Reports Server (NTRS)

    Dias, W. C.

    1994-01-01

    RISK D/C is a prototype program which attempts to do program risk modeling for the Space Exploration Initiative (SEI) architectures proposed in the Synthesis Group Report. Risk assessment is made with respect to risk events, their probabilities, and the severities of potential results. The program allows risk mitigation strategies to be proposed for an exploration program architecture and to be ranked with respect to their effectiveness. RISK D/C allows for the fact that risk assessment in early planning phases is subjective. Although specific to the SEI in its present form, RISK D/C can be used as a framework for developing a risk assessment program for other specific uses. RISK D/C is organized into files, or stacks, of information, including the architecture, the hazard, and the risk event stacks. Although predefined, all stacks can be upgraded by a user. The architecture stack contains information concerning the general program alternatives, which are subsequently broken down into waypoints, missions, and mission phases. The hazard stack includes any background condition which could result in a risk event. A risk event is anything unfavorable that could happen during the course of a specific point within an architecture, and the risk event stack provides the probabilities, consequences, severities, and any mitigation strategies which could be used to reduce the risk of the event, and how much the risk is reduced. RISK D/C was developed for Macintosh series computers. It requires HyperCard 2.0 or later, as well as 2Mb of RAM and System 6.0.8 or later. A Macintosh II series computer is recommended due to speed concerns. The standard distribution medium for this package is one 3.5 inch 800K Macintosh format diskette. RISK D/C was developed in 1991 and is a copyrighted work with all copyright vested in NASA. Macintosh and HyperCard are trademarks of Apple Computer, Inc.

  1. 3D Magnetron simulation with CST STUDIO SUITE

    SciTech Connect

    Balk, Monika C.

    2011-07-01

    The modeling of magnetrons compared to other tubes is more difficult since it requires 3D modeling rather than a 2D investigation. This is not only due to the geometry which can include complicated details to be modeled in 3D but also due to the interaction process itself. The electric field, magnetic field and particle movement span a 3D space. In this paper 3D simulations of a strapped magnetron with CSTSTUDIO SUITE{sup TM} are presented. (author)

  2. DC Breakdown Experiments

    SciTech Connect

    Calatroni, S.; Descoeudres, A.; Levinsen, Y.; Taborelli, M.; Wuensch, W.

    2009-01-22

    In the context of the CLIC (Compact Linear Collider) project investigations of DC breakdown in ultra high vacuum are carried out in parallel with high power RF tests. From the point of view of saturation breakdown field the best material tested so far is stainless steel, followed by titanium. Copper shows a four times weaker breakdown field than stainless steel. The results indicate clearly that the breakdown events are initiated by field emission current and that the breakdown field is limited by the cathode. In analogy to RF, the breakdown probability has been measured in DC and the data show similar behaviour as a function of electric field.

  3. DC attenuation meter

    DOEpatents

    Hargrove, Douglas L.

    2004-09-14

    A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

  4. Comparative study of properties between a-GeC:H and a-SiC:H films prepared by radio-frequency reactive sputtering in methane

    NASA Astrophysics Data System (ADS)

    Saito, N.; Yamaguchi, T.; Nakaaki, I.

    1995-09-01

    Hydrogenated amorphous germanium-carbon (a-GeC:H) and silicon-carbon (a-SiC:H) films were deposited by reactive magnetron sputtering of Ge and Si targets in a methane argon gas mixture. The effect of rf power on the structural, optical, and electrical properties of the films was investigated. The carbon content in a-SiC:H films is larger than in a-GeC:H for the same deposition condition, and it decreases with increasing rf power. The intensity of the carbon-related bonds, the optical band gap, and the activation energy of dc conductivity of both films decreases with decreasing carbon content. The temperature dependence of dc conductivity of a-SiC:H exhibits activated-type conduction, whereas hopping conduction is predominant in a-GeC:H. Hydrogen concentration and H bonding ratio are examined, indicating that the termination of the dangling bond by hydrogen is more effective in a a-SiC:H films than a-GeC:H films.

  5. DC arc weld starter

    DOEpatents

    Campiotti, Richard H.; Hopwood, James E.

    1990-01-01

    A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

  6. DYLOS DC110

    EPA Science Inventory

    The Dylos DC1100 air quality monitor measures particulate matter (PM) to provide a continuous assessment of indoor air quality. The unit counts particles in two size ranges: large and small. According to the manufacturer, large particles have diameters between 2.5 and 10 micromet...

  7. Characteristics of end Hall ion source with magnetron hollow cathode discharge

    NASA Astrophysics Data System (ADS)

    Tang, Deli; Wang, Lisheng; Pu, Shihao; Cheng, Changming; Chu, Paul K.

    2007-04-01

    An end Hall ion source with magnetron hollow cathode discharge is described. The source is suitable for high current, low energy ion beam applications such as Hall current plasma accelerators. The end Hall ion source is based on an anode layer thruster with closed drift electrons that move in a closed path in the E × B field. Only a simple magnetron power supply is used in the ion source. The special configuration enables uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. In our evaluation, the ion beam current was measured by a circular electrostatic probe and the energy distribution of the ion beam was measured by a retarding potential analyzer (RPA). An ion beam current density of up to 10 mA/cm2 was obtained at a mean ion energy of 100-250 eV using Ar or O2. The ion source can be operated in a stable fashion at a discharge voltage between 200 and 500 V and without additional electron triggering. The discharge power of the ion source can be easily changed by adjusting the gas flow rate and anode voltage. No water cooling is needed for power from 500 W to 2 kW. The simple and rugged ion source is suitable for industrial applications such as deposition of thin films with enhanced adhesion. The operational characteristics of the ion source are experimentally determined and discussed.

  8. Studying of nanocomposite films’ structure and properties obtained by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tleukenov, Y. O.; Plotnikov, S. V.; Erdybaeva, N. K.; Pogrebnyak, A. D.

    2016-02-01

    Various approaches to creating multicomponent na-nocomposite coatings of high and superhigh hardness (from 30 to 100 ± 120 GPa) are reviewed with particular emphasis placed on mechanisms underlying the increase in hardness in thin coatings. Nanocomposite Nb-Al-N films fabricated by magnetron sputtering were researched in this work. Two stable crystalline structural states were found in the films: NbNch and solid solution B1-NbxAl1-xNyO1-y, and also an amorphous component associated with aluminum oxynitride with reactive magnetron sputtering. A relationship of substructural characteristics sensitivity with the current and nanohardness and Knoop hardness characteristic was determined in this paper. Recent changes in the range of 29-33.5 GPa and 46-48 GPa, respectively. Initial principle calculations of NbN and Nb2AlN phases and NbN/AlN heterostructures were carried out for the interpretation of the results. Deposited nanocomposite films with the given mechanical properties may be used as wear resistant or protective coatings. On the basis of these results, it can be assumed that two stable crystalline structural states were found in the films: B1-NbNx and solid solution with a composition close to the B1-Nb0-67Al0-33N. The films also contain an amorphous component associated with aluminum nitride.

  9. DC-DC powering for the CMS pixel upgrade

    NASA Astrophysics Data System (ADS)

    Feld, Lutz; Fleck, Martin; Friedrichs, Marcel; Hensch, Richard; Karpinski, Waclaw; Klein, Katja; Rittich, David; Sammet, Jan; Wlochal, Michael

    2013-12-01

    The CMS experiment plans to replace its silicon pixel detector with a new one with improved rate capability and an additional detection layer at the end of 2016. In order to cope with the increased number of detector modules the new pixel detector will be powered via DC-DC converters close to the sensitive detector volume. This paper reviews the DC-DC powering scheme and reports on the ongoing R&D program to develop converters for the pixel upgrade. Design choices are discussed and results from the electrical and thermal characterisation of converter prototypes are shown. An emphasis is put on system tests with up to 24 converters. The performance of pixel modules powered by DC-DC converters is compared to conventional powering. The integration of the DC-DC powering scheme into the pixel detector is described and system design issues are reviewed.

  10. Regulated dc-to-dc converter features low power drain

    NASA Technical Reports Server (NTRS)

    Thornwall, J.

    1968-01-01

    A regulated dc-to-dc converter requires negligible standby power for the operation of critical electronic equipment. The main operating circuitry consumes power intermittently according to load conditions, rather than constantly.

  11. Growth of crystalline hydroxyapatite thin films at room temperature by tuning the energy of the RF-magnetron sputtering plasma.

    PubMed

    López, Elvis O; Mello, Alexandre; Sendão, Henrique; Costa, Lilian T; Rossi, André L; Ospina, Rogelio O; Borghi, Fabrício F; Silva Filho, José G; Rossi, Alexandre M

    2013-10-01

    Right angle radio frequency magnetron sputtering technique (RAMS) was redesigned to favor the production of high-quality hydroxyapatite (HA) thin coatings for biomedical applications. Stoichiometric HA films with controlled crystallinity, thickness varying from 254 to 540 nm, crystallite mean size of 73 nm, and RMS roughness of 1.7 ± 0.9 nm, were obtained at room temperature by tuning the thermodynamic properties of the plasma sheath energy. The plasma energies were adjusted by using a suitable high magnetic field confinement of 143 mT (1430 G) and a substrate floating potential of 2 V at the substrate-to-magnetron distance of Z = 10 mm and by varying the sputtering geometry, substrate-to-magnetron distance from Z = 5 mm to Z = 18 mm, forwarded RF power and reactive gas pressure. Measurements that were taken with a Langmuir probe showed that the adjusted RAMS geometry generated a plasma with an adequate effective temperature of Teff ≈ 11.8 eV and electron density of 2.0 × 10(15) m(-3) to nucleate nanoclusters and to further crystallize the nanodomains of stoichiometric HA. The deposition mechanism in the RAMS geometry was described by the formation of building units of amorphous calcium phosphate clusters (ACP), the conversion into HA nanodomains and the crystallization of the grain domains with a preferential orientation along the HA [002] direction. PMID:24059686

  12. Early Oscillation Detection for DC/DC Converter Fault Diagnosis

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2011-01-01

    The electrical power system of a spacecraft plays a very critical role for space mission success. Such a modern power system may contain numerous hybrid DC/DC converters both inside the power system electronics (PSE) units and onboard most of the flight electronics modules. One of the faulty conditions for DC/DC converter that poses serious threats to mission safety is the random occurrence of oscillation related to inherent instability characteristics of the DC/DC converters and design deficiency of the power systems. To ensure the highest reliability of the power system, oscillations in any form shall be promptly detected during part level testing, system integration tests, flight health monitoring, and on-board fault diagnosis. The popular gain/phase margin analysis method is capable of predicting stability levels of DC/DC converters, but it is limited only to verification of designs and to part-level testing on some of the models. This method has to inject noise signals into the control loop circuitry as required, thus, interrupts the DC/DC converter's normal operation and increases risks of degrading and damaging the flight unit. A novel technique to detect oscillations at early stage for flight hybrid DC/DC converters was developed.

  13. 3-D Printed High Power Microwave Magnetrons

    NASA Astrophysics Data System (ADS)

    Jordan, Nicholas; Greening, Geoffrey; Exelby, Steven; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad

    2015-11-01

    The size, weight, and power requirements of HPM systems are critical constraints on their viability, and can potentially be improved through the use of additive manufacturing techniques, which are rapidly increasing in capability and affordability. Recent experiments on the UM Recirculating Planar Magnetron (RPM), have explored the use of 3-D printed components in a HPM system. The system was driven by MELBA-C, a Marx-Abramyan system which delivers a -300 kV voltage pulse for 0.3-1.0 us, with a 0.15-0.3 T axial magnetic field applied by a pair of electromagnets. Anode blocks were printed from Water Shed XC 11122 photopolymer using a stereolithography process, and prepared with either a spray-coated or electroplated finish. Both manufacturing processes were compared against baseline data for a machined aluminum anode, noting any differences in power output, oscillation frequency, and mode stability. Evolution and durability of the 3-D printed structures were noted both visually and by tracking vacuum inventories via a residual gas analyzer. Research supported by AFOSR (grant #FA9550-15-1-0097) and AFRL.

  14. Anisotropy of the electron component in a cylindrical magnetron discharge. II. Application to real magnetron discharge.

    PubMed

    Porokhova, I A; Golubovskii, Yu B; Behnke, J F

    2005-06-01

    The physical processes occurring in electrode regions and the positive column of a cylindrical magnetron discharge in crossed electric and magnetic fields are investigated based on the solution of the Boltzmann kinetic equation by a multiterm decomposition of the electron phase space distribution function in terms of spherical tensors. The influence of the distribution function anisotropy on the absolute values and radial profiles of the electron density and rates of various transport and collision processes is analyzed. The spiral lines for the directed particle and energy transport are obtained to illustrate the anisotropy effects in dependence on the magnetic field. The electron equipressure surfaces are constructed in the form of ellipsoids of pressure and their transformation in the cathode and anode regions is studied. A strong anisotropy of the energy flux tensor in contrast to a weak anisotropy of the momentum flux density tensor is found. Particular results are obtained for the cylindrical magnetron discharge in argon at pressure 3 Pa, current 200 mA, and magnetic fields ranging within 100 and 400 G. PMID:16089880

  15. A Complementary Type of Electrochromic Device by Radio Frequency Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change their optical properties reversibly in the visible region (400-800 nm) upon charge insertion/extraction reactions according to the applied voltage. A complementary type of EC device composes of two electrochromic layers, which is separated by an ionic conduction layer (electrolyte). In this work, the EC device was fabricated using vanadium oxide (V2O5) and titanium doped tungsten oxide (WO3-TiO2) electrodes. The EC electrodes were deposited as thin film structures by a reactive RF magnetron sputtering system in a medium of gas mixture of argon and oxygen. surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical property and durability of the EC device was investigated by a potentiostat system. Optical measurement was examined under applied voltages of +/- 2.5 V by a computer-controlled system, constantly.

  16. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    SciTech Connect

    Krylov, P. N. Zakirova, R. M.; Fedotova, I. V.

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  17. Morphology of epitaxial TiN(001) grown by magnetron sputtering

    SciTech Connect

    Karr, B.W.; Petrov, I.; Cahill, D.G.; Greene, J.E.

    1997-03-01

    The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by {ital in situ} scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650{lt}T{lt}750{degree}C using reactive magnetron sputter deposition in pure N{sub 2}. The surface morphology is dominated by growth mounds with an aspect ratio of {approx_equal}0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t{sup {alpha}}, with {alpha}=0.25{plus_minus}0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. {copyright} {ital 1997 American Institute of Physics.}

  18. DC current monitor

    NASA Technical Reports Server (NTRS)

    Canter, Stanley (Inventor)

    1991-01-01

    A non-intrusive DC current monitor is presented which emulates the theoretical operation of an AC transformer. A conductor, carrying the current to be measured, acts as the primary of a DC current transformer. This current is passed through the center of a secondary coil, and core positioned thereabout, and produces a magnetic flux which induces a current in the secondary proportional to the current flowing in the primary. Means are provided to periodically reset the transformer core such that the measurement inaccuracies associated with core saturation are obviated. A reset current is caused to periodically flow through the secondary coil which produces a magnetic flux oppositely polarized to the flux created by the current in the primary, thus allowing ongoing measurements to be made.

  19. Reactive arthritis

    MedlinePlus

    Reactive arthritis is a group of conditions that may involve the joints, eyes, and urinary and genital systems. ... The exact cause of reactive arthritis is unknown. It occurs most often in men younger than age 40. It may follow an infection in the urethra ...

  20. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  1. Analysis and experiments of self-injection magnetron

    NASA Astrophysics Data System (ADS)

    Yi, Zhang; Wen-Jun, Ye; Ping, Yuan; Huan-Cheng, Zhu; Yang, Yang; Ka-Ma, Huang

    2016-04-01

    Magnetrons are widely used in microwave-based industrial applications, which are rapidly developing. However, the coupling between their output frequency and power as well as their wideband spectra restricts their further application. In this work, the output frequency and power of a magnetron are decoupled by self-injection. Moreover, the spectral bandwidth is narrowed, and the phase noise is reduced for most loop phase values. In order to predict the frequency variation with loop phase and injection ratio, a theoretical model based on a circuit equivalent to the magnetron is developed. Furthermore, the developed model also shows that the self-injection magnetron is stabler than the free-running magnetron and that the magnetron’s phase noise can be reduced significantly for most loop phase values. Experimental results confirm the conclusions obtained using the proposed model. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  2. The Structure and Properties of Pulsed dc Sputtered Nanocrystalline NbN Coatings for Proton Exchange Membrane Fuel Cell.

    PubMed

    Chun, Sung-Yong

    2016-02-01

    Niobium nitride coatings for the surface modified proton exchange membrane fuel cells with various pulse parameters have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of niobium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that niobium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering. PMID:27433732

  3. Magnetron deposition of coatings with evaporation of the target

    NASA Astrophysics Data System (ADS)

    Bleykher, G. A.; Krivobokov, V. P.; Yuryeva, A. V.

    2015-12-01

    We analyze the potentialities of the plasma in various types of magnetron sputtering systems including pulsed and liquid-target systems for producing intense emission of atoms and high-rate deposition of coatings. For this purpose, a mathematical model of thermal and erosion processes in the target is developed based on the heat conduction equations taking into account first-order phase transitions. Using this model, we determine the parameters of magnetrons for which intense evaporation of atoms from the target surface takes place. It is shown that evaporation leads to an increase in the growth rate of metal coatings by 1-2 orders of magnitude as compared to conventional magnetron systems based only on collisional sputtering.

  4. Very low pressure high power impulse triggered magnetron sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  5. Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films

    SciTech Connect

    Cherng, J.S.; Chang, S.H.; Hong, S.H.

    2012-10-15

    Highlights: ► Nanocrystalline silicon films were made by pulsed-DC magnetron sputtering. ► A threshold hydrogen concentration was required. ► High defect density due to ion bombardment and oxygen contamination caused low conductivity. -- Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target.

  6. Quantitative analysis of sputter processes in a small magnetron system

    SciTech Connect

    Knittel, Ivo; Gothe, Marc; Hartmann, Uwe

    2005-11-15

    Sputter deposition of titanium in argon from a small circular magnetron is characterized. The dependence of the deposition rate on pressure, power, and target-substrate distance has been measured. A framework for the application of the analytic approach by Keller and Simmons of ballistic and diffusive transport to simple three-dimensional sputter geometries is developed and applied. The sputter yield and the pressure-distance product are determined from the data set as the only fit parameters of the model. For the entire range of operation of the magnetron, the sputter process can be described in terms of the relatively simple approach.

  7. A high-efficiency relativistic magnetron with the filled dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Yu; Fan, Yu-Wei; Shi, Di-fu; Shu, Ting

    2016-07-01

    Relativistic magnetron (RM) is a popular high power microwave device. Filling the resonant cavities with the low-loss dielectric is a well-proven technology that improves the performance of RM. In order to enhance the power efficiency, a dielectric-filled relativistic magnetron (DFRM) is presented and investigated numerically with KARAT code in this paper. The simulation results indicate that the maximum power efficiency is enhanced from 50.0% in the conventional RM to 56.0% in the DFRM when the applied voltage and the magnetic field are 280 kV and 0.5 T, respectively. Besides, the simulation results are analyzed and discussed.

  8. Improved computer modelling of magnetron injection guns for gyrotrons

    SciTech Connect

    Caplan, M.; Thorington, C.

    1984-01-01

    A variable mesh finite-element electron gun design code has been developed to simulate hollow beams produced by magnetron injection guns. Very accurate solutions of the self-consistent space charge forces are obtained by using a computational mesh, distorted in a way which allows a high density of mesh points within the hollow beam. A generalized hybrid model for cathode emission has been incorporated which combines temperature limited and space charge limited emission in a way justified from empirical and physical arguments. Beam characteristics of a magnetron injection gun are presented as the transition from temperature limited to space charge limited operation is made. Limited comparisons with experimental results are presented.

  9. Magnetron sputtered boron films and Ti/B multilayer structures

    SciTech Connect

    Makowiecki, D.M.; Jankowski, A.F.

    1991-03-11

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

  10. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  11. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  12. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  13. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  14. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  15. Reactive Arthritis

    MedlinePlus

    ... with treatment and may cause joint damage. What Research Is Being Conducted on Reactive Arthritis? Researchers continue ... such as methotrexate and sulfasalazine. More information on research is available from the following websites: National Institutes ...

  16. Auxiliary resonant DC tank converter

    DOEpatents

    Peng, Fang Z.

    2000-01-01

    An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

  17. Analysis of self-oscillating dc-to-dc converters

    NASA Technical Reports Server (NTRS)

    Burger, P.

    1974-01-01

    The basic operational characteristics of dc-to-dc converters are analyzed along with the basic physical characteristics of power converters. A simple class of dc-to-dc power converters are chosen which could satisfy any set of operating requirements, and three different controlling methods in this class are described in detail. Necessary conditions for the stability of these converters are measured through analog computer simulation whose curves are related to other operational characteristics, such as ripple and regulation. Further research is suggested for the solution of absolute stability and efficient physical design of this class of power converters.

  18. High performance dc-dc conversion with voltage multipliers

    NASA Technical Reports Server (NTRS)

    Harrigill, W. T.; Myers, I. T.

    1974-01-01

    The voltage multipliers using capacitors and diodes first developed by Cockcroft and Walton in 1932 were reexamined in terms of state of the art fast switching transistors and diodes, and high energy density capacitors. Because of component improvements, the voltage multiplier, used without a transformer, now appears superior in weight to systems now in use for dc-dc conversion. An experimental 100-watt 1000-volt dc-dc converter operating at 100 kHz was built, with a component weight of about 1 kg/kW. Calculated and measured values of output voltage and efficiency agreed within experimental error.

  19. Multiple high voltage output DC-to-DC power converter

    NASA Technical Reports Server (NTRS)

    Cronin, Donald L. (Inventor); Farber, Bertrand F. (Inventor); Gehm, Hartmut K. (Inventor); Goldin, Daniel S. (Inventor)

    1977-01-01

    Disclosed is a multiple output DC-to-DC converter. The DC input power is filtered and passed through a chopper preregulator. The chopper output is then passed through a current source inverter controlled by a squarewave generator. The resultant AC is passed through the primary winding of a transformer, with high voltages induced in a plurality of secondary windings. The high voltage secondary outputs are each solid-state rectified for passage to individual output loads. Multiple feedback loops control the operation of the chopper preregulator, one being responsive to the current through the primary winding and another responsive to the DC voltage level at a selected output.

  20. Improved DC Gun Insulator

    SciTech Connect

    M.L. Neubauer, K.B. Beard, R. Sah, C. Hernandez-Garcia, G. Neil

    2009-05-01

    Many user facilities such as synchrotron light sources and free electron lasers require accelerating structures that support electric fields of 10-100 MV/m, especially at the start of the accelerator chain where ceramic insulators are used for very high gradient DC guns. These insulators are difficult to manufacture, require long commissioning times, and have poor reliability, in part because energetic electrons bury themselves in the ceramic, creating a buildup of charge and causing eventual puncture. A novel ceramic manufacturing process is proposed. It will incorporate bulk resistivity in the region where it is needed to bleed off accumulated charge caused by highly energetic electrons. This process will be optimized to provide an appropriate gradient in bulk resistivity from the vacuum side to the air side of the HV standoff ceramic cylinder. A computer model will be used to determine the optimum cylinder dimensions and required resistivity gradient for an example RF gun application. A ceramic material example with resistivity gradient appropriate for use as a DC gun insulator will be fabricated by glazing using doping compounds and tested.

  1. Structure and electronic parameters of a-Si:H deposited by DC-MASD

    SciTech Connect

    Golikova, O.A.; Kuznetsov, A.N.; Kudoyarova, V.K.; Kazanin, M.M.; Adriaenssens, G.J.; Herremans, H.

    1997-07-01

    A systematic study of structure and electronic parameters of a-Si:H deposited by dc-magnetron assisted SiH{sub 4} decomposition (MASD) depending on substrate temperature, gas pressure, gas flow and grid mounting has been carried out. Correlation between the film microstructure, dangling bond density and electron mobility-life time product were established. The photoconductivity changes under light soaking were shown to be minimal when the films contained hydrogen in the (SiH{sub 2}){sub n} chains.

  2. Geometrical Aspects of a Hollow-cathode Magnetron (HCM)

    SciTech Connect

    Cohen, Samuel, A.; Wang, Zhehui

    1998-11-01

    A hollow-cathode magnetron (HCM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS), is operable at substantially lower pressures than its planar-magnetron counterpart. We have studied the dependence of magnetron operational parameters on the inner diameter D and length L of a cylindrical HCS. Only when L is greater than L sub zero, a critical length, is the HCM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic or primary electron transport. At pressures above 1 mTorr, an electron-impact ionization model with Bohm diffusion at a temperature equivalent to one-half the primary electron energy and with an ambipolar constraint can explain the ion-electron pair creation required to sustain the discharge. The critical length L sub zero is determined by the magnetization length of the primary electrons.

  3. Contributions to the velocity spread of magnetron injection guns

    SciTech Connect

    Danly, B.G.; Kimura, T.; Kreischer, K.E.

    1995-12-31

    Various contributions to the velocity spread in magnetron injection guns for gyrotron applications have been studied, including the effects of misalignments, field errors, and cathode surface roughness. The net result of these effects is a substantial increase in spread over the ballistic spread usually calculated with typical gun codes.

  4. Synthesis of magnetron sputtered WO₃ nanoparticles-degradation of 2-chloroethyl ethyl sulfide and dimethyl methyl phosphonate.

    PubMed

    Verma, Monu; Chandra, Ramesh; Gupta, Vinod Kumar

    2015-09-01

    In the present study, tungsten oxide nanoparticles were synthesized using DC magnetron sputtering and investigated their potential for decontamination of 2-chloroethyl ethyl sulfide (CEES) and dimethyl methyl phosphonate (DMMP). The tungsten oxide nanoparticles were characterized by Powder XRD, FE-SEM, EDS, TEM, TGA, N2-BET and FT-IR techniques. The XRD patterns of as-deposited and post annealed tungsten oxide nanoparticles reveal that the crystallite size of detected monoclinic phase WO3 nanoparticle was increased with increasing annealing temperatures. The phase and increase in particles size of WO3 nanoparticles were also confirmed by Raman and TEM analyses. The obtained surface area (∼63-33 m(2)/g) of magnetron sputtered WO3 nanoparticles was found to be enhanced significantly as compared to reported surface area of WO3 nanoparticles synthesis by various techniques. The study of degradation reactions of CEES and DMMP on the surface of obtained nanoparticles was carried out by using GC and GC-MS techniques. The decontamination reactions were found to be pseudo first order steady state with rate constant (k) and half life values 0.143-0.109 h(-1) and 4.82-6.49 h for CEES and 0.018-0.010 h(-1) and 36.87-66.65 h for DMMP, respectively. The FT-IR data reveal the role of hydrolysis reactions in the decontamination of CEES as well as DMMP. PMID:25965433

  5. A DC Transformer

    NASA Technical Reports Server (NTRS)

    Youngquist, Robert C.; Ihlefeld, Curtis M.; Starr, Stanley O.

    2013-01-01

    A component level dc transformer is described in which no alternating currents or voltages are present. It operates by combining features of a homopolar motor and a homopolar generator, both de devices, such that the output voltage of a de power supply can be stepped up (or down) with a corresponding step down (or up) in current. The basic theory for this device is developed, performance predictions are made, and the results from a small prototype are presented. Based on demonstrated technology in the literature, this de transformer should be scalable to low megawatt levels, but it is more suited to high current than high voltage applications. Significant development would be required before it could achieve the kilovolt levels needed for de power transmission.

  6. A Plasma-Based DC-DC Electrical Transformer

    NASA Astrophysics Data System (ADS)

    Nebel, Richard; Finn, John

    2013-10-01

    Previous work has indicated that it may be possible to make DC-DC electrical transformers using plasmas. The mechanism is an MHD electromagnetic relaxation process induced by helical electrodes. This process is now being tested on the Bismark device at Tibbar Technologies.

  7. Dc-To-Dc Converter Uses Reverse Conduction Of MOSFET's

    NASA Technical Reports Server (NTRS)

    Gruber, Robert P.; Gott, Robert W.

    1991-01-01

    In modified high-power, phase-controlled, full-bridge, pulse-width-modulated dc-to-dc converters, switching devices power metal oxide/semiconductor field-effect transistors (MOSFET's). Decreases dissipation of power during switching by eliminating approximately 0.7-V forward voltage drop in anti-parallel diodes. Energy-conversion efficiency increased.

  8. Efficient Design in a DC to DC Converter Unit

    NASA Technical Reports Server (NTRS)

    Bruemmer, Joel E.; Williams, Fitch R.; Schmitz, Gregory V.

    2002-01-01

    Space Flight hardware requires high power conversion efficiencies due to limited power availability and weight penalties of cooling systems. The International Space Station (ISS) Electric Power System (EPS) DC-DC Converter Unit (DDCU) power converter is no exception. This paper explores the design methods and tradeoffs that were utilized to accomplish high efficiency in the DDCU. An isolating DC to DC converter was selected for the ISS power system because of requirements for separate primary and secondary grounds and for a well-regulated secondary output voltage derived from a widely varying input voltage. A flyback-current-fed push-pull topology or improved Weinberg circuit was chosen for this converter because of its potential for high efficiency and reliability. To enhance efficiency, a non-dissipative snubber circuit for the very-low-Rds-on Field Effect Transistors (FETs) was utilized, redistributing the energy that could be wasted during the switching cycle of the power FETs. A unique, low-impedance connection system was utilized to improve contact resistance over a bolted connection. For improved consistency in performance and to lower internal wiring inductance and losses a planar bus system is employed. All of these choices contributed to the design of a 6.25 KW regulated dc to dc converter that is 95 percent efficient. The methodology used in the design of this DC to DC Converter Unit may be directly applicable to other systems that require a conservative approach to efficient power conversion and distribution.

  9. Pb(Zr,Ti)O3 recording media for probe data storage devices prepared by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hiranaga, Yoshiomi; Cho, Yasuo

    2014-09-01

    Pb(Zr,Ti)O3 (PZT) thin films for ferroelectric probe data storage technology were studied. (001)-oriented PZT thin films were deposited on SrRuO3/SrTiO3 substrates by rf magnetron sputtering. Dc voltage was applied on the films using a metal-coated tip and the poling region was observed by scanning nonlinear dielectric microscopy (SNDM). The contrasts in the positive and negative poling regions in the SNDM images obtained were improved by using the PZT films after ion-beam irradiation. This suggests that a surface layer of a few nanometers in thickness was formed on the as-grown PZT film and the polarization was not invertible in the surface layer. The deposition condition was examined with focus on deposition temperature. Nanosized domain dots were successfully formed on a PZT film deposited at 550 °C.

  10. Oxygen partial pressure dependent optical properties of glancing angle deposited (GLAD) Ta2O5 films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; Misal, J. S.; Pratap, C.; Sahoo, N. K.

    2016-05-01

    Experiments were carried out on Ta2O5 oxide thin films by asymmetric bipolar pulsed DC magnetron sputtering using a new hybrid combination of conventional (normal incidence) deposition and glancing angle deposition (GLAD) geometries. The films were prepared with varying O2 partial pressure. The ellipsometry characterization reveals a systematic variation in refractive index, which decreased from 2.2 in the normal films to an average 1.78 in the GLAD films. The bandgap of these GLAD films is slightly higher as compared to normal films. Overall transmission of the GLAD films is increased is by ~ 15 % implying a reduction in the refractive index for potential optical filtering device applications. The results were further supported by X-ray reflectivity measurements which show an effective double layer structure in GLAD consisting of layers with different densities of the same Ta2O5 material.

  11. Synthesis and characterization of pure anatase phase nanocrystalline TiO2 thin film by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Pawar, Nimisha; Bhargava, Ankita; Dayal, Saurabh; Kumar, C. Sasi

    2016-05-01

    In present work, our focus is to deposit anatase phase nanocrystalline TiO2 thin films. In order to prepare Titanium oxide films we first deposited Titanium thin films using DC magnetron sputtering and then the substrates were annealed in a muffle furnace at different temperatures. Further the samples were characterized for analysis of phase, morphology and optical properties using XRD, SEM, AFM and photoluminescence spectroscopy respectively. XRD shows the formation of tetragonal phase TiO2 with lattice parameters values a= 3.8 Å and c=9.6 Å. The surface roughness value of the films were found to vary from 1.6 nm to 15.9 nm. The grain size as estimated from AFM varies from 48 nm to 125 nm at different temperatures. Thus, the results revealed the formation of ultra-smooth anatase phase pure nanocrystalline TiO2 spherical particles.

  12. Early Oscillation Detection Technique for Hybrid DC/DC Converters

    NASA Technical Reports Server (NTRS)

    Wang, Bright L.

    2011-01-01

    Oscillation or instability is a situation that must be avoided for reliable hybrid DC/DC converters. A real-time electronics measurement technique was developed to detect catastrophic oscillations at early stages for hybrid DC/DC converters. It is capable of identifying low-level oscillation and determining the degree of the oscillation at a unique frequency for every individual model of the converters without disturbing their normal operations. This technique is specially developed for space-used hybrid DC/DC converters, but it is also suitable for most of commercial and military switching-mode power supplies. This is a weak-electronic-signal detection technique to detect hybrid DC/DC converter oscillation presented as a specific noise signal at power input pins. It is based on principles of feedback control loop oscillation and RF signal modulations, and is realized by using signal power spectral analysis. On the power spectrum, a channel power amplitude at characteristic frequency (CPcf) and a channel power amplitude at switching frequency (CPsw) are chosen as oscillation level indicators. If the converter is stable, the CPcf is a very small pulse and the CPsw is a larger, clear, single pulse. At early stage of oscillation, the CPcf increases to a certain level and the CPsw shows a small pair of sideband pulses around it. If the converter oscillates, the CPcf reaches to a higher level and the CPsw shows more high-level sideband pulses. A comprehensive stability index (CSI) is adopted as a quantitative measure to accurately assign a degree of stability to a specific DC/DC converter. The CSI is a ratio of normal and abnormal power spectral density, and can be calculated using specified and measured CPcf and CPsw data. The novel and unique feature of this technique is the use of power channel amplitudes at characteristic frequency and switching frequency to evaluate stability and identify oscillations at an early stage without interfering with a DC/DC converter s

  13. Reactive arthritis.

    PubMed

    Keat, A

    1999-01-01

    Reactive arthritis is one of the spondyloarthropathy family of clinical syndromes. The clinical features are those shared by other members of the spondyloarthritis family, though it is distinguished by a clear relationship with a precipitating infection. Susceptibility to reactive arthritis is closely linked with the class 1 HLA allele B27; it is likely that all sub-types pre-dispose to this condition. The link between HLA B27 and infection is mirrored by the development of arthritis in HLA B27-transgenic rats. In this model, arthritis does not develop in animals maintained in a germ-free environment. Infections of the gastrointestinal, genitourinary and respiratory tract appear to provoke reactive arthritis and a wide range of pathogens has now been implicated. Although mechanistic parallels may exist, reactive arthritis is distinguished from Lyme disease, rheumatic fever and Whipple's disease by virtue of the distinct clinical features and the link with HLA B27. As in these conditions both antigens and DNA of several micro-organisms have been detected in joint material from patients with reactive arthritis. The role of such disseminated microbial elements in the provocation or maintenance of arthritis remains unclear. HLA B27-restricted T-cell responses to microbial antigens have been demonstrated and these may be important in disease pathogenesis. The importance of dissemination of bacteria from sites of mucosal infection and their deposition in joints has yet to be fully understood. The role of antibiotic therapy in the treatment of reactive arthritis is being explored; in some circumstances, both the anti-inflammatory and anti-microbial effects of certain antibiotics appear to be valuable. The term reactive arthritis should be seen as a transitory one, reflecting a concept which may itself be on the verge of replacement, as our understanding of the condition develops. Nevertheless it appropriately describes arthritis that is associated with demonstrable

  14. Electrical and optical characterization of a pulsed discharge in an inverted cylindrical magnetron

    NASA Astrophysics Data System (ADS)

    Vozniy, O. V.; Duday, D.; Luciu, I.; Wirtz, T.

    2014-08-01

    An inverted cylindrical magnetron operating in pulsed mode was developed, with a rotating unbalanced system of magnets. The magnetic field was calculated using the finite integration technique in order to determine the optimal anode-to-cathode distance inside the reactor. A cylindrical titanium target was used for our experiments. The average power input was varied between 500 and 1300 W leading to low power densities varying between 0.9 and 2.4 W cm-2. The frequency was fixed at a low value of 250 Hz, suitable for depositing Ti and TiO2 at low temperatures on polymer substrates. Long on-time pulses (400 µs) were used in order to reach interesting deposition rates (>1 µm h-1). A transition from metallic to oxide mode was observed for all power inputs. Time-resolved optical emission spectroscopy was used for the investigation of plasma dynamics during the on-time pulse in both metallic and reactive regimes. Three phases of discharge evolution were identified in the metallic mode: the Ar-dominated phase, followed by a transition zone and a Ti-dominated phase. The emission of Ti species completely disappeared in the reactive mode, associated with the fact that titanium atoms left the target surface as TiOx molecular fragments. In conclusion, the deposition system and conditions used resulted in a new mode of TiO2 deposition.

  15. Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

    NASA Astrophysics Data System (ADS)

    Murphy, Neil R.; Sun, Lirong; Grant, John T.; Jones, John G.; Jakubiak, Rachel

    2015-10-01

    Molybdenum oxide films were deposited using modulated pulse power magnetron sputtering (MPPMS) from a molybdenum target in a reactive environment where the flow rate of oxygen was varied from 0 sccm to 2.00 sccm. By varying the amount of reactive oxygen available during deposition, the composition of the films ranged from metallic Mo to fully stoichiometric MoO3, when the molybdenum target became poisoned, due to the formation of a dielectric surface oxide coating. Film compositions were verified using high energy resolution x-ray photoelectron spectroscopy. Target poisoning occurred at an oxygen flow rate of 1.25 sccm and reversed when the flow rate decreased to about 1.00 sccm. MoO3 films deposited via MPPMS had densities of 3.8 g cm-3, 81% of the density of crystalline α-MoO3 as determined by x-ray reflectivity (XRR). In addition, XRR and atomic force microscopy data showed sub-nanometer surface roughness values. From spectroscopic ellipsometry, the measured refractive index of the MoO3 films at 589 nm was 1.97 with extinction coefficient values <0.02 at wavelengths above the measured absorption edge of 506 nm (2.45 eV).

  16. 76 FR 13926 - Airworthiness Directives; The Boeing Company Model DC-8-11, DC-8-12, DC-8-21, DC-8-31, DC-8-32...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-15

    ... required by AD 2008-25-05, Amendment 39-15763 (73 FR 78936, December 24, 2008), for Principal Structural... Policies and Procedures (44 FR 11034, February 26, 1979), and 3. Will not have a significant economic...-8-21, DC-8-31, DC-8-32, DC-8-33, DC-8-41, DC-8-42, DC-8-43, DC-8-51, DC-8-52, DC-8-53,......

  17. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    PubMed

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites. PMID:27140550

  18. Impact of quasi-dc currents on three-phase distribution transformer installations

    SciTech Connect

    McConnell, B.W.; Barnes, P.R. ); Tesche, F.M. , Dallas, TX ); Schafer, D.A. )

    1992-06-01

    This report summarizes a series of tests designed to determine the response of quasi-dc currents on three-phase power distribution transformers for electric power systems. In general, if the dc injection is limited to the primary side of a step-down transformer, significant harmonic distortion is noted and an increase in the reactive power demand results. For dc injection on the secondary (load) side of the step-down transformer the harmonic content at the secondary side is quite high and saturation occurs with a relatively low level of dc injection; however, the reactive power demand is significantly lower. These tests produced no apparent damage to the transformers. Transformer damage is dependent on the duration of the dc excitation, the level of the excitation, and on thermal characteristics of the transfer. The transformer response time is found to be much shorter than seen in power transformer tests at lower dc injection levels. This shorter response time suggests that the response time is strongly dependent on the injected current levels, and that higher levels of dc injection for shorter durations could produce very high reactive power demands and harmonic distortion within a few tenths of a second. The added reactive power load could result in the blowing of fuses on the primary side of the transformer for even moderate dc injection levels, and neutral currents are quite large under even low-level dc injection. This smoking neutral'' results in high-level harmonic injection into equipment via the neutral and in possible equipment failure.

  19. Triple voltage dc-to-dc converter and method

    SciTech Connect

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  20. Resonant surface enhancement of Raman scattering of Ag nanoparticles on silicon substrates fabricated by dc sputtering

    SciTech Connect

    Fang Yingcui; Li Xiaxi; Blinn, Kevin; Mahmoud, Mahmoud A.; Liu Meilin

    2012-09-15

    Ag nanoparticles (AgNPs) were deposited onto silicon substrates by direct current (dc) magnetron sputtering. The influences of sputtering power and sputtering time on the AgNP film morphology were studied using atomic force microscopy. The particle size was successfully tuned from 19 nm to 53 nm by varying the sputtering time at a dc power of 10 W. When Rhodamine 6 G (R6G) was used as the probe molecule, the AgNP films showed significant surface enhanced Raman scattering effect. In particular, it is found that larger particles show stronger enhancement for lower concentrations of R6G while smaller particles display stronger enhancement for higher concentrations of R6G.