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Sample records for dilute magnetic semiconductor

  1. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  2. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  3. Spin dynamics in paramagnetic diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Phan, Van-Nham; Tran, Minh-Tien

    2015-10-01

    Microscopic properties of low-energy spin dynamics in diluted magnetic semiconductor are addressed in a framework of the Kondo lattice model including random distribution of magnetic dopants. Based on the fluctuation-dissipation theorem, we derive an explicit dependence of the spin diffusion coefficient on the single-particle Green function which is directly evaluated by dynamical mean-field theory. In the paramagnetic state, the magnetic scattering has been manifested to suppress spin diffusion. In agreement with other ferromagnet systems, we also point out that the spin diffusion in diluted magnetic semiconductors at small carrier concentration displays a monotonic 1 /T -like temperature dependence. By investigating the spin diffusion coefficient on a wide range of the model parameters, the obtained results have provided a significant scenario to understand the spin dynamics in the paramagnetic diluted magnetic semiconductors.

  4. Phase Transition of Diluted Magnetic Semiconductor

    NASA Astrophysics Data System (ADS)

    Li, M. K.; Lee, S. J.; Yuldashev, S. U.; Ihm, G.; Kang, T. W.

    2011-12-01

    Three types of phase transitions in diluted magnetic semiconductor, first-order, second-order and mixed-order, are found in theory. Especially the mixed type transition shows two steps transition and novel specific heat property. Specific heat properties disclose a possible meta ferromagnetic phase confirmed by the experimental qualitative result.

  5. Diluted magnetic III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Munekata, H.; Ohno, H.; von Molnar, S.; Segmüller, Armin; Chang, L. L.; Esaki, L.

    1989-10-01

    A new diluted magnetic III-V semiconductor of In1-xMnxAs (x<=0.18) has been produced by molecular-beam epitaxy. Films grown at 300 °C are predominantly ferromagnetic and their properties suggest the presence of MnAs clusters. Films grown 200 °C, however, are predominantly paramagnetic, and the lattice constant decreases with increasing Mn composition; both are indicative of the formation of a homogeneous alloy. These films have n-type conductivity and reduced band gaps.

  6. Disorder Problem In Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Nelson, Ryky; Ekuma, Chinedu; Terletska, Hanna; Sudhindra, Vidhyadhiraja; Moreno, Juana; Jarrell, Mark

    2015-03-01

    Motivated by experimental studies addressing the role of impurity disorder in diluted magnetic semiconductors (DMS), we investigate the effects of disorder using a simple tight-binding Hamiltonian with random impurity potential and spin-fermion exchange which is self-consistently solved using the typical medium theory. Adopting the typical density of states (TDoS) as the order parameter, we find that the TDoS vanishes below a critical concentration of the impurity, which indicates an Anderson localization transition in the system. Our results qualitatively explain why at concentrations lower than a critical value DMS are insulating and paramagnetic, while at larger concentrations are ferromagnetic. We also compare several simple models to explore the interplay between ferromagnetic order and disorder induced insulating behavior, and the role of the spin-orbit interaction on this competition. We apply our findings to (Ga,Mn)As and (Ga,Mn)N to compare and contrast their phase diagrams.

  7. Diluted magnetic semiconductor superlattices and heterostructures

    NASA Astrophysics Data System (ADS)

    Datta, S.; Furdyna, J. K.; Gunshor, R. L.

    Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd 1-xMn xTe and Hg 1-xMn xTe are examples of such materials. Their structural and band parameters can be "tuned" by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga 1-xAl xAs. Using molecular beam epitaxy, we have grown Cd 1-xMn xTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd 1-xMn xTe superlattices is several orders of magnitude greater than that from a Cd 1-xMn xTe film with uniform Mn content, or from bulk Cd 1-xMn xTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest.

  8. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  9. Current density and state density in diluted magnetic semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Pérez Merchancano, S. T.; Paredes Gutiérrez, H.; Zuñiga, J. A.

    2016-02-01

    We study in this paper the spin-polarized current density components in diluted magnetic semiconductor tunnelling diodes with different sample geometries. We calculate the resonant JxV and the density of states. The differential conductance curves are analyzed as functions of the applied voltage and the magnetic potential strength induced by the magnetic ions.

  10. Magnetization steps and bound magnetic polarons in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    McCabe, Gao Hua

    1997-09-01

    Magnetization measurements and computer simulations were used to address several current problems in the area of the Diluted Magnetic Semiconductors (DMS). The method of Magnetization Steps (MSTs) was used to study Jahn-Teller Distortions in Zn1-xCrxTe, and exchange constants in Pb1-xEuxSe and Pb1- xEuxTe. Bound magnetic polarons in Cu2MnxZn1-xSnS4 were studied by conventional magnetometry. Jahn-Teller Distortions in cubic Zn1- xCrxTe were studied using MSTs. Possible Jahn- Teller Distortions in this material are along the three equivalent /langle 100/rangle axes. Energy states for the three distortion directions are equivalent at H = 0, but are different for finite H. The main issue is whether the populations of three possible distortions will vary with field, or remain frozen at their values in zero- field. The data showed that the populations of the distortions changed significantly. The dominant antiferomagnetic exchange constants J between Eu2+ ions in IV-VI Pb1- xEuxSe and Pb1-xEuxTe were determined using the MST method. Measurements were made at 0.6 K in fields up to 150 kOe. Supplementary data by our collaborators were taken at much lower temperatures. Simulations of various MSTs (from isolated Eu2+ ions, pairs of ions, and triplets) were performed to fit the experimental data. Because J is determined from the MSTs for pairs, the effects of other anisotropies and exchange interactions on these MSTs were considered. They were found to bring little change to the values of J. The exchange constants were J/kB = -0/24 ± 0.03 K for Ph 1-xEu xSe amd os J/KB = -0.264 ± 0.018 K for Ph1-xEuxTe. The dominant AF exchange constants were identified as J1, between nearest-neighbors, by comparing the experimental magnetization curves to the theoretical simulations using the single J model. The dominant antiferromagnetic exchange constants J between Eu2+ ions in IV-VI Pb1- xEuxSe and Pb1-xEuxTe were determined using the MST method. Measurements were made at 0.6 K in

  11. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  12. Magnetism in dilute iron doped YN semiconductors

    NASA Astrophysics Data System (ADS)

    Sharma, Ramesh; Dwievdi, Shalini; Sharma, Yamini

    2016-05-01

    The full potential linearized augmented plane-wave (FP-LAPW) scheme of computation is used to explore the electronic and magnetic properties of Fe doped into YN. Band structure calculations show that YN is a semicon ductor with a narrow indirect band gap of 0.08 eV along D-X direction. Optical properties such as reflectivity, absorption coefficient are reported and are discussed on the basis of corresponding electronic structure. Spin polarized results indicate that the ground state of Y1-xFexN (x=0.06, 0.12, 0.25) is ferromagnetic with a high moment on Fe-atom and zero moment on Y and N atoms, except in the case of 25 % doping. A discussion of the transport properties of YN and Y1-xFexN is given in order to get insights of the Fe substitution effects.

  13. Scanning Hall probe microscopy of a diluted magnetic semiconductor

    SciTech Connect

    Kweon, Seongsoo; Samarth, Nitin; Lozanne, Alex de

    2009-05-01

    We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

  14. Novel diluted magnetic semiconductor materials based on zinc oxide

    NASA Astrophysics Data System (ADS)

    Chakraborti, Deepayan

    The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor (DMS) materials system which displays ferromagnetism above room temperature and to understand the origin of long-range ferromagnetic ordering in these systems. Recent developments in the field of spintronics (spin based electronics) have led to an extensive search for materials in which semiconducting properties can be integrated with magnetic properties to realize the objective of successful fabrication of spin-based devices. For these devices we require a high efficiency of spin current injection at room temperature. Diluted magnetic semiconductors (DMS) can serve this role, but they should not only display room temperature ferromagnetism (RTFM) but also be capable of generating spin polarized carriers. Transition metal doped ZnO has proved to be a potential candidate as a DMS showing RTFM. The origin of ferromagnetic ordering in ZnO is still under debate. However, the presence of magnetic secondary phases, composition fluctuations and nanoclusters could also explain the observation of ferromagnetism in the DMS samples. This encouraged us to investigate Cu-doped(+ spin in the 2+ valence state) ZnO system as a probable candidate exhibiting RTFM because neither metallic Cu nor its oxides (Cu2O or CuO) are ferromagnetic. The role of defects and free carriers on the ferromagnetic ordering of Cu-doped ZnO thin films was studied to ascertain the origin of ferromagnetism in this system. A novel non-equilibrium Pulsed Laser Deposition technique has been used to grow high quality epitaxial thin films of Cu:ZnO and (Co,Cu):ZnO on c-plane Sapphire by domain matching epitxay. Both the systems showed ferromagnetic ordering above 300K but Cu ions showed a much stronger ferromagnetic ordering than Co, especially at low concentrations (1-2%) of Cu where we realized near 100% polarization. But, the incorporation of Cu resulted in a 2-order of magnitude rise in the resistivity from 10-1 to 101

  15. Spin-dependent shot noise in diluted magnetic semiconductor/semiconductor heterostructures with a nonmagnetic barrier

    NASA Astrophysics Data System (ADS)

    Wu, Shuang; Guo, Yong

    2014-05-01

    We investigate quantum size effect on the spin-dependent shot noise in the diluted magnetic semiconductor (DMS)/semiconductor heterostructure with a nonmagnetic semiconductor (NMS) barrier in the presence of external magnetic and electric fields. The results demonstrate that the NMS barrier plays a quite different role from the DMS layer in the electron transport process. It is found that spin-down shot noise shows relatively regular oscillations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically. However, as the width of NMS layer increases, the spin-down shot noise displays irregular oscillations at first and then decreases while the spin-up shot noise decreases at a quite different rate. The results indicate that the shot noise can be used as a sensitive probe in detecting material type and its size.

  16. Diluted magnetic semiconductor effects in Mn-implanted silicon carbide

    SciTech Connect

    Komarov, A. V.; Ryabchenko, S. M.; Los, A. V.; Romanenko, S. M.

    2011-04-15

    Light transmission and Faraday rotation spectra measured at the temperature of 2 K were compared for silicon carbide single crystals of 4H polytype (4H-SiC), implanted with 3.8 x 10{sup 16} cm{sup -2} of Mn ions at the beam energy of 190 keV, and a control 4H-SiC single crystal sample, which was not implanted. Mn ion implantation led to the creation of a Mn-doped surface layer with the average Mn concentration of 10{sup 21} cm{sup -3} and a thickness of approximately 0.2 {mu}m. Transmission of light through the implanted crystal changed only slightly in comparison with the control sample, which however, corresponded to a relatively strong attenuation in the implanted layer. This was interpreted as a result of scattering, which emerges in the surface layer due to optical nonuniformities, created by the high energy ion irradiation. The presence of a thin Mn-ion-containing surface layer led, despite its small thickness, to noticeable changes in the sample Faraday rotation spectra. The estimated values of the Verdet constant for this layer were about three orders of magnitude larger and of opposite sign compared to the Verdet constant values of the undoped sample. Magnetic field dependencies of the Faraday rotation contribution from the implanted layer were found to be saturating functions, which points to a proportionality of the Faraday rotation to the magnetization of the paramagnetic Mn ion subsystem. Based on these findings we conclude that the Mn-implanted SiC layer exhibits magneto-optical properties typical of a diluted magnetic semiconductor. At the same time, no ferromagnetic ordering was observed in the studied (Si, Mn)C sample.

  17. Growth, structure, and optical characterization of diluted magnetic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Cooley, Benjamin Joseph

    Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new field of research that seeks to exploit electron spin within electronic and opto-electronic semiconductor devices. While much of the effort within semiconductor spintronics has been directed toward fundamental studies and applications of 3D, 2D and 0D systems, there has been little work to date on 1D systems. The distinctive change in the electronic density of states with changing dimensionality provides a strong motivation for developing and exploring semiconductor nanowires in which one might be able to probe and control spin-dependent phenomena within a 1D or quasi-1D environment. This thesis explores the crystal growth, structural properties and magneto-optical behavior of quasi-1D semiconductor nanowires in which we incorporate magnetism through two approaches: first, by synthesizing nanowires of the diluted magnetic semiconductor (Zn,Mn)Se, wherein the d-shell electrons of substitutional Mn ions interact with the band states of the ZnSe host lattice via sp--d exchange; second, by making hybrid core-shell nanostructures wherein a metallic ferromagnetic shell (MnAs) is epitaxially deposited on a semiconductor nanowire (GaAs). After an introductory overview of past work in the field and a description of the experimental techniques relevant to the thesis, we discuss our experimental results. The first set of experiments focuses on ZnSe and (Zn,Mn)Se nanowires grown in a single stage. The nanowires were grown on Si and GaAs substrates with a thin layer of gold evaporated onto them, which were then annealed before growth so that the gold formed nanoscale droplets. The growth yields samples covered in random arrays of nanowires growing out an an angle to the substrate, with an undergrowth of crooked nanowires and other small structures. The long thin nanowires vary in diameter, down to

  18. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  19. Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    NASA Astrophysics Data System (ADS)

    Yang, Ping-Fan; Guo, Yong

    2016-02-01

    We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of "smoothing out" the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

  20. Tuning magnetic disorder in diluted magnetic semiconductors using high fields to 89 Tesla

    SciTech Connect

    Crooker, Scott A; Samarth, Nitin

    2008-01-01

    We describe recent and ongoing studies at the National High Magnetic Field Laboratory at Los Alamos using the new '100 Tesla Multi-Shot Magnet', which is presently delivering fields up to {approx}89 T during its commissioning. We discuss the first experiments performed in this magnet system, wherein the linewidth of low-temperature photoluminescence spectra was used to directly reveal the degree of magnetic alloy disorder 'seen' by excitons in single Zn{sub 0.80}Cd{sub 0.22}Mn{sub 0.08}Se quantum wells. The magnetic potential landscape in II-VI diluted magnetic semiconductors (DMS) is typically smoothed when the embedded Mn{sup 2+} spins align in an applied field. However, an important (but heretofore untested) prediction of current models of compositional disorder is that magnetic alloy fluctuations in many DMS compounds should increase again in very large magnetic fields approaching 100 T. We observed precisely this increase above {approx}70 T, in agreement with a simple model of magnetic alloy disorder.

  1. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  2. Influence of cation choice on magnetic behavior of III-N dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Frazier, Rachel Marian

    With the increasing interest in spintronics, many attempts have been made at incorporating spin-based functionality into existing semiconductor technology. One approach, utilizing dilute magnetic semiconductors (DMS) formed via introduction of transition metal ions into III-Nitride hosts, would allow for integration of spin based phenomena into current wide bandgap device technology. To accomplish such device structures, it is necessary to achieve single phase transition metal doped GaN and AlN which exhibit room temperature magnetic behavior. Ion implantation is an effective survey method for introduction of various transition metals into AlN. In ion implanted AlN, the Co and Cr doped films showed hysteresis at 300K while the Mn doped material did not. However, it is not a technique which will allow for the development of advanced spin based devices. Such devices will require epitaxial methods of the sort currently used for synthesis of III-Nitride optoelectronics. One such technique, Gas Source Molecular Beam Epitaxy (GSMBE), has been used to synthesize AlN films doped with Cr and Mn. Room temperature ferromagnetism has been observed for AlMnN and AlCrN grown by GSMBE. In both cases, the magnetic signal was found to depend on the flux of the dopant. The magnetization of the AlCrN was found to be an order of magnitude greater than in the AlMnN. The temperature dependent magnetic behavior of AlCrN was also superior to AlMnN; however, the AlCrN was not resistant to thermal degradation. An all-semiconductor tunneling magnetoresistive device (TMR) was grown with GaMnN as a spin injector and AlMnN as a spin filter. The resistance of the device should change with applied magnetic field depending on the magnetization of the injector and filter. However, due to the impurity bands found in the AlMnN, the resistance was found to change very little with magnetic field. To overcome such obstacles as found in the transition metal doped AlN, another dopant must be used. One

  3. Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

    SciTech Connect

    Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee

    2013-03-15

    The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads' magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green's function (NEGF) formalism, incorporating the electron-electron interaction in the QD. We provide the first analytical solution for the Green's function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree-Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: Black-Right-Pointing-Pointer The spin polarized transport through a diluted magnetic quantum dot is studied. Black-Right-Pointing-Pointer The model is based on the Green's function and the equation of motion method. Black-Right-Pointing-Pointer The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. Black-Right-Pointing-Pointer The system is suitable for current-induced spin-transfer torque application. Black-Right-Pointing-Pointer A large tunneling current and a high TMR are possible for sensor application.

  4. Organic analogues of diluted magnetic semiconductors: bridging quantum chemistry to condensed matter physics

    NASA Astrophysics Data System (ADS)

    Furis, Madalina; Rawat, Naveen; Cherian, Judy G.; Wetherby, Anthony; Waterman, Rory; McGill, Stephen

    2015-09-01

    The selective coupling between polarized photons and electronic states in materials enables polarization-resolved spectroscopy studies of exchange interactions, spin dynamics, and collective magnetic behavior of conduction electrons in semiconductors. Here we report on Magnetic Circular Dichroism (MCD) studies of magnetic properties of electrons in crystalline thin films of small molecule organic semiconductors. Specifically, the focus was on the magnetic exchange interaction properties of d-shell ions (Cu2+, Co2+ and Mn2+) metal phthalocyanine (Pc) thin films that one may think of as organic analogues of diluted magnetic semiconductors (DMS). These films were deposited in-house using a recently developed pen-writing method that results in crystalline films with macroscopic long range ordering and improved electronic properties, ideally suited for spectroscopy techniques. Our experiments reveal that, in analogy to DMS, the extended π-orbitals of the Pc molecule mediate the spin exchange between highly localized d-like unpaired spins. We established that exchange mechanisms involve different electronic states in each species and/or hybridization between d-like orbitals and certain delocalized π-orbitals. Unprecedented 25T MCD and PL conducted in the unique 25T Split Florida HELIX magnet at the National High Magnetic Field Laboratory (NHMFL) will prove useful in probing these exchange interactions.

  5. Successive spin polarizations underlying a new magnetic coupling contribution in diluted magnetic semiconductors.

    PubMed

    Andriotis, Antonis N; Fthenakis, Zacharias G; Menon, Madhu

    2015-02-11

    We propose a new type of magnetic coupling (MC) that is found in diluted magnetic semiconductors (DMSs). The origin of this is found to be the result of charge transfer processes followed by successive spin polarizations (SSPs) along successive cation-anion segments which include the impurities. The basic process underlying the SSP-based MC (SSP-MC) is the sharing of a single spin orbital by two neighboring impurities. As such, it can be considered as a localized double exchange as it is not mediated by free carriers. SSP-MC can be either ferromagnetic (SSP-FMC) or antiferromagnetic (SSP-AFMC) and, as demonstrated here, the SSP-FMC can be significantly enhanced via codoping; it can act in competition with superexchange and/or double and/or p-d exchange interactions. While the SSP-MC is not directly related to the magnitude of the magnetic moments of the impurities, it depends strongly on the energy difference of the host and impurity d-band centers, the difference of their electronegativities and rather weakly on the coupling interactions between them as well as between the cations and their mediating anions. The validity of the proposed SSP-MC as a new type of magnetic coupling is demonstrated by ab initio results for DMSs, namely ZnO, GaN, GaP, TiO2 and MoS2 monodoped (with Co, Cu and Mn) and codoped (with Co-Cu-Co and Mn-Cu-Mn). PMID:25614683

  6. Successive spin polarizations underlying a new magnetic coupling contribution in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Andriotis, Antonis N.; Fthenakis, Zacharias G.; Menon, Madhu

    2015-02-01

    We propose a new type of magnetic coupling (MC) that is found in diluted magnetic semiconductors (DMSs). The origin of this is found to be the result of charge transfer processes followed by successive spin polarizations (SSPs) along successive cation-anion segments which include the impurities. The basic process underlying the SSP-based MC (SSP-MC) is the sharing of a single spin orbital by two neighboring impurities. As such, it can be considered as a localized double exchange as it is not mediated by free carriers. SSP-MC can be either ferromagnetic (SSP-FMC) or antiferromagnetic (SSP-AFMC) and, as demonstrated here, the SSP-FMC can be significantly enhanced via codoping; it can act in competition with superexchange and/or double and/or p-d exchange interactions. While the SSP-MC is not directly related to the magnitude of the magnetic moments of the impurities, it depends strongly on the energy difference of the host and impurity d-band centers, the difference of their electronegativities and rather weakly on the coupling interactions between them as well as between the cations and their mediating anions. The validity of the proposed SSP-MC as a new type of magnetic coupling is demonstrated by ab initio results for DMSs, namely ZnO, GaN, GaP, TiO2 and MoS2 monodoped (with Co, Cu and Mn) and codoped (with Co-Cu-Co and Mn-Cu-Mn).

  7. A computational study on magnetic effects of Zn1-x Crx O type diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Duru, İzzet Paruğ; Değer, Caner; Kalaycı, Taner; Arucu, Muhammet

    2015-12-01

    Diluted magnetic semiconductors (DMS) have been intensely investigated both experimentally and theoretically in recent years. In spite of large body of studies to have a better understanding on working principles of devices based on DMS materials and taking a detailed control during fabrication process, nature of the system remains largely unknown. It is proposed that dominant contribution to DMS Hamiltonian is originated from ferromagnetic interaction between antiferromagnetic Cr+3 and its nearest neighbors rather than long-range interactions which commonly reported. In the light of experimental data obtained from literature, we simulated Zn1-x Crx O wurtzite thin film based on Metropolis algorithm and Markov Chain Monte Carlo (MC-MC) method as realistic as possible. We found that the soft ferromagnetic behaviour of Zn1-x Crx O thin film emerges by increasing doping ratios up to 15% (x=0.15), then it gradually vanishes above 15% (x=0.15) at room temperature. Results obtained here was found to be highly consistent with experimental studies.

  8. Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

    NASA Astrophysics Data System (ADS)

    Yi, J. B.; Lim, C. C.; Xing, G. Z.; Fan, H. M.; van, L. H.; Huang, S. L.; Yang, K. S.; Huang, X. L.; Qin, X. B.; Wang, B. Y.; Wu, T.; Wang, L.; Zhang, H. T.; Gao, X. Y.; Liu, T.; Wee, A. T. S.; Feng, Y. P.; Ding, J.

    2010-04-01

    We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

  9. Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

    PubMed

    Yi, J B; Lim, C C; Xing, G Z; Fan, H M; Van, L H; Huang, S L; Yang, K S; Huang, X L; Qin, X B; Wang, B Y; Wu, T; Wang, L; Zhang, H T; Gao, X Y; Liu, T; Wee, A T S; Feng, Y P; Ding, J

    2010-04-01

    We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure. PMID:20481907

  10. Domain walls in the (Ga,Mn)as diluted magnetic semiconductor.

    PubMed

    Sugawara, Akira; Kasai, H; Tonomura, A; Brown, P D; Campion, R P; Edmonds, K W; Gallagher, B L; Zemen, J; Jungwirth, T

    2008-02-01

    We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 to 120 nm. The domain walls are of the Néel type and evolve from near-90 degrees walls at low temperatures to large angle [11[over ]0]-oriented walls and small angle [110]-oriented walls at higher temperatures. PMID:18352324

  11. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    NASA Astrophysics Data System (ADS)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  12. On the theory of domain structure in ferromagnetic phase of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Stephanovich, V. A.

    2006-09-01

    We present a comprehensive analysis of domain structure formation in ferromagnetic phase of diluted magnetic semiconductors (DMS) of p-type. Our analysis is carried out on the base of effective magnetic free energy of DMS calculated by us earlier [Yu.G. Semenov, V.A. Stephanovich, Phys. Rev. B 67 (2003) 195203]. This free energy, substituting DMS (a disordered magnet) by effective ordered substance, permits to apply the standard phenomenological approach to domain structure calculation. Using coupled system of Maxwell equations with those obtained by minimization of above free energy functional, we show the existence of critical ratio ν of concentration of charge carriers and magnetic ions such that sample critical thickness L (such that at Lν the sample is monodomain. This feature makes DMS different from conventional ordered magnets as it gives a possibility to control the sample critical thickness and emerging domain structure period by variation of ν. As concentration of magnetic impurities grows, ν→∞ restoring conventional behavior of ordered magnets. Above facts have been revealed by examination of the temperature of transition to inhomogeneous magnetic state (stripe domain structure) in a slab of finite thickness L of p-type DMS. Our theory can be easily generalized for arbitrary temperature and DMS shape.

  13. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  14. Developing Spectroscopic Ellipsometry to Study II-Vi and Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Young-Dong

    We have constructed a rotating analyzer spectroscopic ellipsometer (RAE) to study effects of magnetic and nonmagnetic doping on the E_1 and E _1 + Delta_1 band gap energies in ZnSe-based II-VI semiconductors. To remove the natural surface oxide overlayer which distorts the intrinsic dielectric response of the sample, a chemical etching technique using dilute NH_4OH solution was developed. The successful removal of the oxide overlayer on ZnSe was confirmed via the XPS technique. For diluted magnetic semiconductors (DMS), we found that the E_1 and E _1 + Delta_1 band gap energies increase with x for Zn_{1-x}Fe _{x}Se and Zn_ {1-x}Co_{x}Se, and decrease with x for Zn_{1-x} Mn_{x}Se. An sp -d direct exchange interaction model which explained the Gamma-point band gap energy of Zn _{1-x}Mn_ {x}Se was applied. The calculated band gap energies at the L-point are only consistent with Zn _{1-x}Mn_ {x}Se data. We showed that an sp-d hybridization model, which includes the location of the energy levels of the magnetic impurity d-levels can account for the concentration dependence of E_1 and E _1 + Delta_1 band gap energies of all three materials. For Zn_{x}Cd _{1-x}Se systems, all spectral features of CdSe were identified as E_0, E_0 + Delta_0, E_1, E_1 + Delta_1, E_2, and E _sp{0}{'} threshold energies from band structure calculations using a nonlocal empirical pseudopotential method. Many-body effect has to be included in the calculation of the dielectric function of CdSe to obtain good agreement with the measured spectrum. Concentration dependent spin-orbit splitting band gap Delta _1(x) is well explained by the statistical fluctuation of the alloy composition.

  15. Magnetic Interactions in the Diluted Magnetic Semiconductor Mn_xGe_1-x

    NASA Astrophysics Data System (ADS)

    Erwin, Steven C.; Hellberg, C. Stephen

    2001-03-01

    Much current debate has focused on the origins of ferromagnetism in III-V magnetic semiconductors. Less attention has been paid to magnetically doped Group-IV semiconductors, although they have been predicted to have Curie temperatures of the same order [1]. We use density-functional theoretical (DFT) methods to study the electronic structure and magnetic interactions in Mn_xGe_1-x, the first such elemental magnetic semiconductor to be realized experimentally [2]. We use ordered supercells to simulate 6% Mn concentration, and calculate total energies within DFT for a variety of positional and magnetic arrangements of Mn at fixed concentration. We then fit these energies to a Heisenberg model to extract the spin coupling constants. The result is a strong but very short-ranged antiferromagnetic interaction between Mn atoms, and a weaker but longer-ranged ferromagnetic interaction. The ferromagnetic interaction dominates at all Mn-Mn distances beyond nearest neighbor. [1] T. Dietl et al., Science 287, 1019 (2000). [2] Y.D. Park, J. Mattson, A. Hanbicki, and B. Jonker (unpublished).

  16. Solubility control in dilute magnetic semiconductors by using the co-doping method

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Fujii, Hitoshi; Bergqvist, Lars; Dederichs, Peter H.; Katayama-Yoshida, Hiroshi

    2009-03-01

    To overcome low solubility limit of magnetic impurities in dilute magnetic semiconductors (DMS) and realize room temperature ferromagnetism, we propose a co-doping method to increase solubility of magnetic impurities in DMS [1]. We calculate electronic structure of (Ga, Mn)As, (Ga, Mn)N, (Ga, Cr)N and (Zn, Cr)Te with interstitial impurities, such as Li, Na and Cu, from first-principles by using the Korringa-Kohn- Rostoker coherent potential approximation (KKR-CPA) method. From the total energy results, it is shown that the mixing energy of magnetic impurity becomes negative and the solubility of magnetic impurities is strongly enhanced under the existence of interstitials [1]. In general, the co-dopants compensate hole carriers, thus the system becomes paramagnetic. However, owing to the large diffusivity of these interstitial impurities, we can anneal out the co-dopants after the crystal growth to recover the ferromagnetism. As an example, kinetic Monte Carlo simulations for the diffusion of interstitial co-dopants in DMS will be shown. [1] K. Sato et al., Jpn. J. Appl. Phys. 46 L1120 (2007)

  17. Stabilization of Ferromagnetic States by Electron Doping in ZnO-Based Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2001-03-01

    In order to investigate functionality of ZnO as a diluted magnetic semiconductor (DMS), we had studied the magnetism in ZnO doped with 3d transition metal atoms (TM) and showed that it was also a candidate for a new functional magnetic material [1]. In this paper, we develop our previous work and give detailed materials design with ZnO-based DMS based on ab initio calculations. The electronic structure of a TM-doped ZnO was calculated within the local density approximation by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. Total energies of Zn_1-xTM^\\uparrow_xO and Zn_1-xTM^\\uparrow_x/2TM^downarrow_x/2O, where up and down arrows mean the directions of respective atomic magnetic moments, were compared and appearance of the ferromagnetism was discussed. Effects of carrier doping to these systems were also considered. It was found that their magnetic states were controllable by changing the carrier density. In particular, ferromagnetic states were stabilized by electron doping in the case of Fe, Co or Ni doped ZnO. From the point of practical applications, it is favorable feature to realize high Curie temperature ferromagnet, because n-type ZnO is easily available. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.

  18. Novel photoinduced phase transitions in transition metal oxides and diluted magnetic semiconductors

    PubMed Central

    2012-01-01

    Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr0.55(Ca1 − ySry)0.45MnO3 (y = 0.25), SrTiO3, and Ti1 − xCoxO2 (x = 0.05, 0.10) under laser illumination and discuss electronic structural changes induced by optical excitation in these strongly correlated oxides. We discuss the novel photoinduced phase transitions in these transition metal oxides and diluted magnetic semiconductors on the basis of polaronic pictures such as orbital, ferromagnetic, and ferroelectric polarons. PMID:23092248

  19. Materials design of dilute magnetic semiconductors based on the control of spinodal decomposition

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2010-03-01

    Recently, spinodal decomposition phenomena attract much attention in the fabrication of dilute magnetic semiconductors (DMS). Many experimental results indicate that the magnetic properties of DMS are strongly affected by the occurrence of spinodal decomposition [1], thus people are now interested in controlling the magnetic properties of DMS by tuning the spinodal decomposition. In this talk, I will discuss spinodal decomposition in DMS based on the first-principles calculation. The electronic structure of DMS is calculated by using the Korringa-Kohn-Rostoker coherent potential approximation method. Based on the calculated mixing energy I will discuss phase diagrams of DMS systems and their chemical trends. By using the calculated chemical pair interactions between magnetic impurities in DMS, the self-organization of nano-structures in DMS of the nano-structures are simulated by using the Monte Carlo method. The simulation results indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the nano-structures by changing the crystal growth condition [2]. Next, I will propose co-doping method to control solubility limit of magnetic impurities in DMS. From the total energy calculations, it is shown that the solubility of magnetic impurities is strongly enhanced under the existence of interstitial donors [2]. However, due to the compensation of holes by the co-dopants, the ferromagnetism is suppressed. Based on the kinetic Monte Carlo simulations, we propose low temperature annealing method to remove interstitial co-dopants for recovering the ferromagnetism. By combining the co-doping and the low temperature annealing, we can fabricate DMS with high concentration of magnetic impurities which should show high-Tc. This work is based on the collaboration with H. Fujii, L. Bergqvist, P. H. Dederichs and H. Katayama-Yoshida.[4pt] [1] A. Bonanni, Semicond. Sci. Technol. 22 (2007) R41.[0pt] [2] K. Sato et al., Rev. Mod. Phys. Phys

  20. Carriers-mediated ferromagnetic enhancement in Al-doped ZnMnO dilute magnetic semiconductors

    SciTech Connect

    Saleem, Murtaza; Siddiqi, Saadat A.; Atiq, Shahid; Anwar, M. Sabieh; Hussain, Irshad; Alam, Shahzad

    2011-11-15

    Nano-crystalline Zn{sub 0.95-x}Mn{sub 0.05}Al{sub x}O (x = 0, 0.05, 0.10) dilute magnetic semiconductors (DMS) were synthesized by sol-gel derived auto-combustion. X-ray diffraction (XRD) analysis shows that the samples have pure wurtzite structure typical of ZnO without the formation of secondary phases or impurity. Crystallite sizes were approximated by Scherrer formula while surface morphology and grain sizes were measured by field emission scanning electron microscopy. Incorporation of Mn and Al into the ZnO structure was confirmed by energy-dispersive X-ray analysis. Temperature dependent electrical resistivity measurements showed a decreasing trend with the doping of Al in ZnMnO, which is attributable to the enhancement of free carriers. Vibrating sample magnetometer studies confirmed the presence of ferromagnetic behavior at room temperature. The results indicate that Al doping results in significant variation in the concentration of free carriers and correspondingly the carrier-mediated magnetization and room temperature ferromagnetic behavior, showing promise for practical applications. We attribute the enhanced saturation magnetization and electrical conductivity to the exchange interaction mediated by free electrons.

  1. Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

    NASA Astrophysics Data System (ADS)

    Nepal, N.; Luen, M. Oliver; Zavada, J. M.; Bedair, S. M.; Frajtag, P.; El-Masry, N. A.

    2009-03-01

    We report on the electrical field control of ferromagnetism (FM) at room temperature in III-N dilute magnetic semiconductor (DMS) films. A GaMnN layer was grown on top of an n-GaN substrate and found to be almost always paramagnetic. However, when grown on a p-type GaN layer, a strong saturation magnetization (Ms) was observed. This FM in GaMnN can be controlled by depletion of the holes in the GaMnN/p-GaN/n-GaN multilayer structures. We have demonstrated the dependence of the FM on the thickness of the p-GaN in this heterostructure and on the applied bias to the GaN p-n junction. The Ms was measured by an alternating gradient magnetometer (AGM) and a strong correlation between the hole concentration near the GaMnN/p-GaN interface and the magnetic properties of the DMS was observed. At room temperature an anomalous Hall effect was measured for zero bias and an ordinary Hall effect for reverse bias in a fully depleted p-GaN layer. This is in close agreement with the AGM measurement results.

  2. Unraveling the nature of carrier-mediated ferromagnetism in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bouzerar, Georges; Bouzerar, Richard

    2015-10-01

    After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds, is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations, Mn-doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole-doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach room-temperature ferromagnetism in the dilute regime? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double-exchange type in (Ga,Mn)N? In spite of the great success of density functional theory-based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model, it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS's. xml:lang="fr"

  3. Generation of diluted magnetic semiconductor nanostructures by pulsed laser ablation in liquid

    NASA Astrophysics Data System (ADS)

    Savchuk, Ol. A.; Savchuk, A. I.; Stolyarchuk, I. D.; Tkachuk, P. M.; Garasym, V. I.

    2015-11-01

    Results of study of two members of diluted magnetic semiconductor (DMS) family, namely Cd1-xMnxTe and Zn1-xMnxO, which are in form of micro- and nanoparticles generated by pulsed laser ablation in liquid medium (PLAL), have been presented. The structural analysis using X-ray diffraction (XRD) of nanocrystals indicated that Mn has entered the AIIBVI lattice without changing the crystal structure and systematically substituted the A2+ ions in the lattice. Atomic force microscopy (AFM) gives information about surface morphology of the formed nanostructures. The scanning electron microscopy (SEM) clearly illustrates flower-like particles of Zn1-xMnxO, which consist of nanosheets and nanoleaves with average thickness about (5-8) nm. Obviously, these nanoobjects are responsible for the observed blue shift of the absorption edge in DMS nanostructures. In magneto-optical Faraday rotation spectra of both Cd1-xMnxTe and Zn1-xMnxO nanostructures there were exhibited peculiarities associated with s,p-d spin exchange interactions and confinement effect. It was observed almost linear dependence of the Faraday rotation as function of magnetic field strength for nanoparticles in contrast to the dependence with saturation in bulk case.

  4. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  5. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Li, Yuke

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research[3]. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1-xSrx) (Ag0.925 Mn0.075) SO(x =0, 0.025, 0.05, 0.075 and 0.1) and (Y1-xSrx) (Cu0.925 Mn0.075) SO (x =0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No 61376094). Li Zhang would like to acknowledge a scholarship Granted by China Scholarship Council (CSC-201408330028)

  6. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Lu, Bin; Li, Yuke

    2015-03-01

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1 - xSrx) (Ag0.925 Mn0.075)SO(x=0, 0.025, 0.05, 0.075 and 0.1) and (Y1 - xSrx) (Cu0.925 Mn0.075) SO (x=0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No. 61376094). Li Zhang would like to acknowledge a scholarship granted by China Scholarship Council (CSC-201408330028).

  7. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  8. Design of dilute magnetic semiconductors with room temperature ferromagnetism by controlling spinodal decompostion

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2008-03-01

    Owing to the recent development of the first-principles method for calculating magnetic properties of dilute magnetic semiconductors (DMS), it has been recognized that the magnetic percolation effect is disastrous to the high temperature ferromagnetism in DMS in particular for low concentrations [1]. The exchange interactions calculated from first-principles are strong for nearest neighbors, but those interactions are short ranged and can not play an important role for realizing high- TC because the solubility of magnetic impurities into DMS is too low to achieve magnetic percolation. To overcome this difficulty and realize room temperature ferromagnetism, we focus on the spinodal decomposition in DMS, and suggest that by controlling the spinodal decomposition high blocking temperature can be realized leading to ferromagnetic behaviour at high temperature [2]. We calculate electronic structure of DMS from first-principles by using the Korringa- Kohn-Rostoker coherent potential approximation (KKR-CPA) method. Then, chemical pair interactions and magnetic exchange interactions between magnetic are calculated. We use the Monte Carlo techniques to simulate spinodal decomposition of DMS and to estimate the magnetic properties of them [3]. The computer simulations for the magnetization process of the decomposition phases indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the clusters by changing the crystal growth condition. This simulation suggests the material design of high blocking temperature DMS by controlling the spinodal decomposition [2].As another approach for realizing high-Tc DMS we propose co-doping method to increase solubility limit of transition metal impurities in DMS [4]. This work is based on the collaboration with H. Katayama-Yoshida and T. Fukushima. [1] L. Bergqvist et al, Phys. Rev. Lett. 93, 137202 (2004), K. Sato et al., Phys. Rev. B 70, 201202 (2004) [2] K. Sato et al., Jpn. J. Appl. Phys. 46, L682

  9. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  10. Extended coherence length of spatially oscillating electron-spin polarization in dilute-magnetic-semiconductor quantum wells

    SciTech Connect

    Tsuchiya, Takuma

    2013-12-04

    We have investigated the possibility that the coherence length of spatially oscillating electron-spin polarization is improved in dilute magnetic semiconductors. In usual nonmagnetic quantum wells, the spin polarization of the electrons injected from a ferromagnetic source electrode oscillates spatially because of the spin precession due to spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields. However, the polarization is damped within an oscillation period by the D’yakonov-Perel’ spin relaxation. In paramagnetic dilute magnetic semiconductors, impurity spin polarization is induced under the electron-spin polarization, and this impurity polarization influences the electron-spin precession and possibly improves the spatial electron-spin coherence. The validity of this effect is demonstrated by a numerical simulation for a CdMnTe quantum well.

  11. Crossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors

    SciTech Connect

    Popescu, Florentin; Sen, Cengiz; Dagotto, Elbio R; Moreo, Adriana

    2007-01-01

    The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in a model for diluted magnetic semiconductors (DMSs) is studied systematically by taking into consideration the Coulomb attraction between the carriers and the magnetic impurities. The density of states and the ferromagnetic transition temperature of a spin-fermion model applied to DMSs are evaluated using dynamical mean-field theory and Monte Carlo (MC) calculations. It is shown that the addition of a square-well-like attractive potential can generate an IB at small enough Mn doping x for values of the p-d exchange J that are not strong enough to generate one by themselves. We observe that the IB merges with the VB when x>=xc where xc is a function of J and the Coulomb strength V. Using MC simulations, we demonstrate that the range of the Coulomb attraction plays an important role. While the on-site attraction, which has been used in previous numerical simulations, effectively renormalizes J for all values of x, an unphysical result, a nearest-neighbor range attraction renormalizes J only at very low dopings, i.e., until the bound holes wave functions start to overlap. Thus, our results indicate that the Coulomb attraction can be neglected to study Mn-doped GaSb, GaAs, and GaP in the relevant doping regimes, but it should be included in the case of Mn-doped GaN, which is expected to be in the IB regime.

  12. An X-ray standing wave study of the diluted magnetic semiconductor Ga(Mn)As

    NASA Astrophysics Data System (ADS)

    Nemsak, Slavomir; Kuo, Cheng-Tai; Schlueter, Christoph; Gehlmann, Mathias; Lin, Shih-Chieh; Doering, Sven; Eschbach, Markus; Mlynczak, Ewa; Plucinski, Lukasz; Borek, Stephan; Minar, Jan; Ohno, Hideo; Lee, Tien-Lin; Schneider, Claus M.; Fadley, Charles S.

    We have combined the recently developed techniques of soft x-ray standing-wave angle-resolved photoemission (SW-ARPES) [Gray et al., EPL 104, 17004 (2013)] and hard x-ray ARPES (HARPES) [Gray et al., Nature Mat. 11, 957 (2012)] so as to be able to use single-crystal Bragg reflection to create the SW [Thiess et al., Sol. St. Comm. 150, 553 (2010)], thus permitting the first measurements of momentum- and element- resolved bulk electronic structure. The strengths of the SW-HARPES method are demonstrated using the dilute magnetic semiconductor Ga(1 - x)MnxAs. A strong SW is generated by Bragg reflection of ca. 3 keV x-rays from the (111) planes of both undoped GaAs and Mn-doped thin films with x=0.05. Due to the uneven occupancy of (111) planes by either Ga(Mn) or As atoms, the element-specific band structure can be obtained with a help of the SW modulation in core levels. Apart from the site specific decomposition of the electronic structure, the SW measurements also confirmed a substitutional presence of Mn atoms at the Ga sites. This technique should be applicable to a broad range of complex materials.

  13. Magnetism and Transport in the Group-IV Dilute Magnetic Semiconductor Germanium(1-x) Manganese(x)

    NASA Astrophysics Data System (ADS)

    Dolph, Melissa Ann Commisso

    Dilute magnetic semiconductors (DMS) have gained interest over the past decade because of their potential applications in spintronics. DMS systems exhibit carriermediated ferromagnetism, a property which enables electric-field control over the magnetization. In this thesis, the DMS Ge1-xMn x was studied. Germanium (Ge) is a desirable semiconductor because of its high hole mobility and its compatibility with silicon. Manganese (Mn) was chosen for its exhibition of indirect ferromagnetic coupling. These properties are deemed necessary for the realization of a magnetic quantum-dot based device such as a magnetic spin switch. Ion implantation of Mn into Ge-on-insulator and molecular beam expitaxy (MBE) were two methods utilized to synthesize the studied Ge1-x Mnx thin films. Several of the Ge1-xMn x films were treated with rapid thermal annealing (RTA) or pulsed laser melting (PLM) in an attempt to improve the crystallinity and make more of the Mn ferromagnetically active. Of all the Ge1-xMn x systems studied, those that exhibited correlated magnetic and magneto-transport properties were those with hole concentrations on the order of 1019 --1020 holes/cm3. Although these systems exhibited robust magneto-transport properties, electric-field biasing proved ineffective at modulating the carrier concentration and ultimately the magnetization as monitored by the ordinary and anomalous Hall effects and the resistivity. The inefficiency of the electric gating was attributed to localized trap states which reside in the energy band gap of the defect-plagued Ge semiconductor. If crystallinity is a prerequisite for gatability, PLM may prove useful as it was found to restore the single crystal structure damaged during Mn implantation. However, PLM resulted in an undesirable segregation of Mn toward the surface of the film (as observed by secondary ion mass spectrometry (SIMS)); a decrease in the saturation magnetization after PLM was attributed to this segregation. The information

  14. Optical properties of diluted magnetic semiconductor Cu:ZnS quantum dots

    NASA Astrophysics Data System (ADS)

    Imam, N. G.; Bakr Mohamed, Mohamed

    2014-09-01

    Herein quantum dots (QDs) of diluted magnetic semiconductor Cu:ZnS have been synthesized via a simple chemical synthesis method. A single phase solid solution is formed up to x = 0.1 which confirmed by using X-ray diffraction. Crystal structure and microstructure analyses were performed by Rietveld refinement. Photoluminescence (PL) emission spectra were recorded for pure and Cu doped ZnS QDs excited at 268 and 228 nm respectively. PL emission and excitation spectra were investigated in different wavelength regions within the range of 200-900 nm. PL results in the range of 220-300 nm emission band reveals that the band gap of pure ZnS QDs is about 4.43 eV which greater than that of bulk ZnS (3.7 eV). The band gap of Cu:ZnS QDs is tunable with Cu content (x) as well as the crystalline size, and it is peaked around 4.47 eV. PL emission in the range of 350-650 nm exhibits a green fluorescence band peaking around 552 nm for pure ZnS QDs, which confirms the characteristic feature of Zn2+ as luminescent centers in the lattice, while blue emission bands peaked around 471 nm for Cu:ZnS QDs that is attributed to the transition of electrons from conduction band of ZnS to the Cu impurity level. The blue shift of the absorption peak directly reflects the effect of quantum confinement. The PL results have been supported by X-ray phase analysis, high-resolution electron microscopy (HRTEM and SEM), compositional evaluation (EDX) and magnetic measurements (VSM).

  15. Comparison of Magnetic Property of Cu-, Al-, and Li-DOPED ZnO Dilute Magnetic Semiconductor Thin Films

    NASA Astrophysics Data System (ADS)

    van, L. H.; Ding, J.; Hong, M. H.; Fan, Z. C.; Wang, L.

    The properties of Cu-, Al-, and Li-doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO2 (101) and SiO2 (110) substrates in both the Cu-ZnO and Li-ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu-ZnO system at 400°C. However, it formed at even much lower temperature in the Li-ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al-ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co-ZnO and 2.5 emu/cm3 for Li-ZnO, synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

  16. Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping

    SciTech Connect

    Jansson, F. Wiemer, M.; Gebhard, F.; Baranovskii, S. D.; Nenashev, A. V.; Petznick, S.; Klar, P. J.; Hetterich, M.

    2014-08-28

    Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn{sub 1–x}Mn{sub x}Se with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal–insulator transition.

  17. Magnetic, structural and optical properties of Mn-based and Cr-based diluted magnetic semiconductors and alloys

    NASA Astrophysics Data System (ADS)

    Alsaad, A.

    2009-03-01

    We have implemented supercell approach by using local spin density functional theory for Mn-doped GaN, Mn-doped ScN and the linear muffin-tin orbital method to predict the structural and magnetic properties of these novel diluted magnetic semiconductors and their GaxMn1-xN and ScxMn1-xN alloys. The global energy minimum of MnN is obtained for zinc-blende structure. If the compound is compressed by 6 % the energy minimum corresponds to the NaCl structure in disagreement with the experimentally observed a slightly tetragonally distorted rocksalt structure, known as ? phase. The rocksalt structure of CrN at about 8 % lattice expansion becomes stable in the ferromagnetic (FM) state and has a global minimum energy at a lattice constant of 3.9 å. We have observed an isostructural phase transition for ScxMn1-xN alloys from zince-blende phase to hexagonal phase that occurs at a hydrostatic pressure of 17.5 GPa. Moreover, the structural and optical properties of single crystal CrN/ScN superlattices and Cr1-xScxN alloys are studied in details. We report an isostructural phase transition from wurtzite (w-CrN) to hexagonal (h-ScN) at a hydrostatic pressure of 21 GPa. We have also used first-principles methods to study the electronic, optical and magnetic properties of MnN and MnAs compounds in the hypothetical cubic zinc-blende phase, a phase in which the two MnN and MnAs binaries have the same local environment as that they have in GaMnN and GaMnAs alloys. We show that MnN exhibits antiferromagnetic (AFM) ground state and MnAs adopts ferromagnetic (FM) ground state.

  18. Structural and magnetic properties of Co + implanted n-GaN dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Husnain, G.; Tao, Fa; Yao, Shu-De

    2010-05-01

    The n-type GaN epilayer was grown on sapphire prepared by metal organic chemical vapour deposition and subsequently Co + ions implanted. The properties of Co + ions implanted GaN epilayer were investigated by structural and magnetic measurements. The results of Rutherford backscattering spectrometry and channeling illustrate that an excellent crystalline quality ( χmin=1.3%) of as-grown GaN. After the implantation of 150 keV Co + ions with dose 3×10 16 cm -2 into GaN and subsequently annealed at 700, 800 and 900 °C, no secondary phase or metal related-peaks were detected by typical XRD. In addition high-resolution X-ray diffraction (HRXRD) was performed to study structural related properties. The magnetization curves were obtained by SQUID and AGM measurements, a well-defined hysteresis loop was observed even at 300 K. The temperature dependence of magnetization was taken in FC and ZFC conditions showed the highest Curie temperature ( TC) ∼370 K recorded for Co + implanted GaN.

  19. Defects induced magnetization in B-doped ZnFeO dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Saleem, Murtaza; Sabieh Anwar, M.; Mahmood, Asif; Atiq, Shahid; Ramay, Shahid M.; Siddiqi, Saadat A.

    2015-05-01

    Zn0.95-xFe0.05BxO (x=0, 0.05) nano-particles have been synthesized using a modified chemically derived citrate gel method. X-ray diffraction analysis demonstrates the wurtzite type hexagonal structure belonging to P63mc space group without the presence of any secondary phase in both compositions. The Diffraction analysis shows that Fe2+ and B3+ ions have replaced some of the Zn2+ ions while some occupy un-detectable interstitial and inter-granular positions inside the structure. Scanning electron micrographs obtained using scanning electron microscopy show typical smaller size of particles in B-doped composition. Temperature dependent electrical resistivity analysis shows the semiconducting characteristics of the compositions and that doping of Fe and B up to 10 at% does not change the electrical behavior of the host material. Magnetic measurements display room temperature ferromagnetism in both compositions with enhanced magnetization in B-doped composition associated with defect induced magnetic mechanism belonging to intrinsically augmented interstitial and inter-granular effects.

  20. Dilute magnetic semiconductors based on wide bandgap SiO 2 with and without transition metal elements

    NASA Astrophysics Data System (ADS)

    Dinh, Van An; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2005-10-01

    Material designs based on the first principle calculations of electronic structures are proposed for α-quartz SiO 2-based dilute magnetic semiconductors. The incorporation of transition metals (TMs) into Si sites and of the non-TM atoms into O sites are treated for various concentrations. At temperatures higher than room temperature, most of the TM-doped SiO 2 have no magnetism, yet Si 1- xMn xO 2 might achieve the ferromagnetism. The substitution of O by non-TM atoms as C or N also induces the magnetism in the host. However, while the N's substitution induces the ferromagnetism, C's substitution causes an anti-ferromagnetic behavior in the host material SiO 2.

  1. The origin of ferromagnetic interaction between bound magnetic polarons in diluted magnetic semiconductors: A minimal model

    NASA Astrophysics Data System (ADS)

    Bednarski, Henryk

    2014-01-01

    We present a detailed analysis of the role of various interaction mechanisms contributing to the bound magnetic polaron (BMP) molecule Hamiltonian with the purpose of gaining an insight into the origin of the ferromagnetic interaction between BMPs. Explicitly, it appears that the BMP molecule Hamiltonian without interatomic direct exchange interaction does not lead to appearance of the parallel alignment of polaronic clouds in the lowest energy state even for large magnitudes of the polaronic exchange fields (up to ~65 meV in Cd0.95Mn0.05Se). Also, it appears that for the range of moderate values of polaronic exchange fields (16-25 meV in Cd0.95Mn0.05Se), the regular Hubbard BMP pair Hamiltonian must be supplemented with the direct interatomic (Heisenberg) exchange interaction to form a minimal model Hamiltonian of BMP molecule with the parallel alignment of the polaronic clouds in the lowest energy state.

  2. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor. PMID:26436325

  3. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  4. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bi-Juan, Chen; Zheng, Deng; Xian-Cheng, Wang; Shao-Min, Feng; Zhen, Yuan; Si-Jia, Zhang; Qing-Qing, Liu; Chang-Qing, Jin

    2016-07-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

  5. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  6. Development of transition-metal doped copper oxide and zinc oxide dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Ivill, Mathew P.

    The field of spintronics has recently attracted much attention because of its potential to provide new functionalities and enhanced performance in conventional electronic devices. Oxide materials provide a convenient platform to study the spin-based functionality in host semiconducting material. Recent theoretical treatments predict that wide band-gap semiconductors, including ZnO, can exhibit high temperature ferromagnetic ordering when doped with transition metals. This work focused on the possibility of using wide band-gap oxide semiconductors as potential spintronic materials. The structure, magnetic, and electronic transport properties of transition-metal doped ZnO and Cu 2O were investigated. Mn and Co were used as transition metal dopants. Thin films of these materials were fabricated using pulsed laser deposition (PLD). The Mn solubility in Cu2O was found to be small and the precipitation of Mn-oxides was favored at high growth temperatures. Phase pure Mn-doped Cu2O samples were found to be non-magnetic. Samples were p-type with carrier concentrations on the order of 1014-10 16 cm-3. The effects of carrier concentration on the magnetic properties of Mn-doped ZnO were studied using Sn and P as electronic codopants. Sn acts as an n-type dopant providing extra electrons to the ZnO. P acts as a p-type dopant that supplies excess holes to compensate the native electron concentration in ZnO. The electron concentration was decreased using P, but the films remained n-type. An inverse correlation was found between the ferromagnetism and the electron concentration; the ferromagnetic coupling between Mn spins increased with decreasing electron concentration. The nature of ferromagnetism in Co-doped ZnO was also investigated. Ferromagnetism was found in films deposited at 400°C in vacuum, while films deposited in oxygen or at higher temperatures were non-magnetic. Films deposited under vacuum had rather high electron concentrations and were presumably doped with

  7. Magnetopolaron effect in diluted semimagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Tarasov, Georgiy G.; Mazur, Yuri I.; Rakitin, Andrey S.; Lavoric, S. R.; Tomm, Jens W.; Hoerstel, W.

    1997-08-01

    Phonon-assisted self-trapping of free carrier is considered in diluted semimagnetics. It is shown that the binding energy of free magnetic polaron can be substantially larger when the 'spin-phonon' coupling is taken into account. For the particular case of 'soft' lattice dynamics the region of stability for hole-induced polaron can be promoted to the temperature of tenths of degrees and magnetic field of a few Tesla. The possible hybridized excitations with the partition of free magnetic polaron are discussed in semimagnetic semiconductors.

  8. Graphene activating room-temperature ferromagnetic exchange in cobalt-doped ZnO dilute magnetic semiconductor quantum dots.

    PubMed

    Sun, Zhihu; Yang, Xiaoyu; Wang, Chao; Yao, Tao; Cai, Liang; Yan, Wensheng; Jiang, Yong; Hu, Fengchun; He, Jingfu; Pan, Zhiyun; Liu, Qinghua; Wei, Shiqiang

    2014-10-28

    Control over the magnetic interactions in dilute magnetic semiconductor quantum dots (DMSQDs) is a key issue to future development of nanometer-sized integrated "spintronic" devices. However, manipulating the magnetic coupling between impurity ions in DMSQDs remains a great challenge because of the intrinsic quantum confinement effects and self-purification of the quantum dots. Here, we propose a hybrid structure to achieve room-temperature ferromagnetic interactions in DMSQDs, via engineering the density and nature of the energy states at the Fermi level. This idea has been applied to Co-doped ZnO DMSQDs where the growth of a reduced graphene oxide shell around the Zn(0.98)Co(0.02)O core turns the magnetic interactions from paramagnetic to ferromagnetic at room temperature, due to the hybridization of 2p(z) orbitals of graphene and 3d obitals of Co(2+)-oxygen-vacancy complexes. This design may open up a kind of possibility for manipulating the magnetism of doped oxide nanostructures. PMID:25222885

  9. Wave Function Mixing and g-Factors in Narrow Gap Ferromagnetic III-V Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sun, Y.; Sanders, G. D.; Stanton, C. J.

    2002-03-01

    We present a theory for wave-function mixing and g-factors in ferromagnetic p-doped narrow gap In_1-xMn_xAs dilute magnetic semiconductor alloys in an ultrahigh external magnetic field, B. We generalize an 8 band Pidgeon-Brown model to include (i) the wavevector, k, dependence of the electronic states along B, (ii) s-d and p-d exchange interactions with localized Mn d-electrons, and (iii) finite magnetic moment in the ferromagnetic state. The complex valence band structure at finite k plays an important role in the cyclotron resonance spectra. We look at the band-mixing and spin-dependence of the wave functions as a function of the wavevector, magnetic field (0-100T), temperature (4 K to 290 K), and Mn concentration (0 to 12 %). From this, we can extract magnetic field dependent g-factors. The sensitivity of the band mixing and g-factors to the s-d and p-d exchange interactions is also investigated. Finally, we look at the effect of band-mixing on optical properties such as the polarization dependence of the absorption and luminescence.

  10. ZnMnO diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, optical and magneto-optical properties

    NASA Astrophysics Data System (ADS)

    Savchuk, A. I.; Perrone, A.; Lorusso, A.; Stolyarchuk, I. D.; Savchuk, O. A.; Shporta, O. A.

    2014-05-01

    Nanoparticles of ZnO and Zn1-xMnxO were synthesized by pulsed laser ablation in liquid medium (PLAL). Metal zinc target was used for preparing of pure ZnO nanostructures and Zn1-xMnxO ceramic plates served for preparing of ternary nanoparticles. As synthesized nanomaterials are characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy analysis (EDS), atomic force microscopy (AFM), UV-vis absorption, photoluminescence and Faraday rotation spectroscopy. SEM images showed a well-defined flower-like nanostructures. Absorption edge of Zn0.95Mn0.05O nanoparticles in colloid solution exhibits blue shift due to confinement effect. The observed photoluminescence peaks are attributed to the band-edge transitions and vacancies or defects. The Faraday rotation as a function of photon energy demonstrates behavior typical for diluted magnetic semiconductors (DMSs) in paramagnetic state.

  11. Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Chanier, T.; Virot, F.; Hayn, R.

    2009-05-01

    We have calculated the chemical trend of magnetic exchange parameters ( Jdd , Nα , and Nβ ) of Zn-based II-VI semiconductors ZnA ( A=O , S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the local spin-density approximation (LSDA)+U method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling Jdd between localized 3d spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band Nα are in good agreement with experiment as well. But the values for Nβ (coupling to doped holes in the valence band) indicate a crossover from weak coupling (for A=Te and Se) to strong coupling (for A=O ) and a localized hole state in ZnO:Mn. This hole localization explains the apparent discrepancy between photoemission and magneto-optical data for ZnO:Mn.

  12. Growth and magnetic properties of IV-VI diluted magnetic semiconductor Ge{sub 1-x}Cr{sub x}Te

    SciTech Connect

    Fukuma, Y.; Taya, T.; Miyawaki, S.; Irisa, T.; Asada, H.; Koyanagi, T.

    2006-04-15

    IV-VI diluted magnetic semiconductor Ge{sub 1-x}Cr{sub x}Te films were grown on BaF{sub 2} substrates by molecular-beam epitaxy. The Ge{sub 1-x}Cr{sub x}Te film up to x=0.103 is single phase as determined by reflection high-energy electron diffraction and x-ray diffraction measurements. The optical band gap decreases with increasing Cr composition. Ferromagnetic order of the Ge{sub 1-x}Cr{sub x}Te films is characterized by direct magnetization and anomalous Hall effect measurements.

  13. Cd{sub 0.9375}Mn{sub 0.0625}S diluted magnetic semiconductor: A DFT study

    SciTech Connect

    Rani, Anita; Kaur, Kulwinder; Kumar, Ranjan

    2015-08-28

    We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd{sub 1-x}Mn{sub x}S in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd{sub 1-x}Mn{sub x}S are discussed in terms of contribution of Mn 3d{sup 5} 4s{sup 2}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbitals. The total magnetic moment is found to be 5.00 µb for Cd{sub 1−x}Mn{sub x}S at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

  14. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  15. Sub-picosecond time-resolved carrier, phonon, and spin dynamics in Cd(Mn)Te diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, D.; Sobolewski, Roman; Mycielski, A.

    2005-08-01

    We present here our research on time-resolved carrier, phonon, and spin dynamics in the diluted-magnetic semiconductor Cd1-xMnxTe [Cd(Mn)Te] system. Our test samples were the high-quality single crystals with the Mn doping concentrations ranging from 9% to 12%, grown by a modified Bridgeman method. Femtosecond optical pump-probe spectroscopy experiments allowed us to study time-resolved dynamics of both the excited carriers and coherent acoustic phonons. Using pump photons with the energy just exceeding the Cd(Mn)Te energy gap, we observed the bleaching effect as excited carriers occupied essentially all available states at the bottom of the conduction band. With the increase of the pump photon energy, the normalized differential reflectivity (ΔR/R) signal changed sign to positive, being dominated by the electron-phonon relaxation process. All our ΔR/R traces, on the delay-time scale well above 100 ps, exhibited very regular oscillations, which were identified, as the signature of coherent acoustic phonons, generated by an electronic and thermal stress introduced at the sample surface by the pump photons. We have also excited our samples with sub-picosecond magnetic transients, generated by a low-temperature-grown GaAs photoconductive switch, and observed the sub-picosecond magneto-optic (Faraday) effect (Mn-ion spin dynamics). The sub-picosecond Faraday response makes this semimagnetic semiconductor an excellent candidate for practical applications in magneto-optics, such as in time-resolved magneto-optical sampling and imaging techniques, or in ultrafast magneto-optical transducers and modulators. In addition, Cd(Mn)Te is a very promising material for ultrafast spintronic and magnetic memory-type devices.

  16. Magnetic mechanism investigations on K and Mn co-doped diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2

    NASA Astrophysics Data System (ADS)

    Yang, Jun-Tao; Luo, Shi-Jun; Xiong, Yong-Chen

    2016-06-01

    On the basic of the first-principles calculations with strong-correlated correction, the electronic structures and magnetic properties of a II-II-V based diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 are investigated within Perdew-Burke-Ernzerhof generalized gradient approximation. With local spins doped via isovalent (Zn2+, Mn2+) substitutions, Sr(Zn,Mn)2As2 system prefers antiferromagnetic ground state, caused by Mn-Mn superexchange interactions. Via off-stoichiometry (Sr2+, K+) substitutions, holes are introduced into (Sr,K)(Zn,Mn)2As2 system, resulting in the ferromagnetic spin responses for local moments, except for the most nearest neighboring Mn-Mn pair. The ferromagnetism of this diluted magnetic semiconductor originates from the competition between the direct anti-ferromagnetic superexchange interaction and the indirect ferromagnetic coupling mediated by Zener's p - d exchange interaction. Our calculations show that Zener's p - d exchange interaction depends on the location of K dopants. From the investigation on the magnetic properties of Mn clusters, it is found that the reduction of the measured Mn saturation moments is caused by the counteraction of the local moments of the most nearest neighboring Mn-Mn pair.

  17. Effect of oxygen vacancy on half metallicity in Ni-doped CeO{sub 2} diluted magnetic semiconductor

    SciTech Connect

    Saini, Hardev S. Saini, G. S. S.; Singh, Mukhtiyar; Kashyap, Manish K.

    2015-05-15

    The electronic and magnetic properties of Ni-doped CeO{sub 2} diluted amgentic semiconductor (DMS) including the effect of oxygen vacancy (V{sub o}) with doping concentration, x = 0.125 have been calculated using FPLAPW method based on Density Functional Theory (DFT) as implemented in WIEN2k. In the present supercell approach, the XC potential was constructed using GGA+U formalism in which Coulomb correction is applied to standard GGA functional within the parameterization of Perdew-Burke-Ernzerhof (PBE). We have found that the ground state properties of bulk CeO{sub 2} compound have been modified significantly due to the substitution of Ni-dopant at the cation (Ce) site with/without V{sub O} and realized that the ferromagnetism in CeO{sub 2} remarkably depends on the V{sub o} concentrations. The presence of V{sub o}, in Ni-doped CeO{sub 2}, can leads to strong ferromagnetic coupling between the nearest neighboring Ni-ions and induces a HMF in this compound. Such ferromagnetic exchange coupling is mainly attributed to spin splitting of Ni-d states, via electrons trapped in V{sub o}. The HMF characteristics of Ni-doped CeO{sub 2} including V{sub o} makes it an ideal material for spintronic devices.

  18. Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1-xFexTe

    NASA Astrophysics Data System (ADS)

    Pekarek, T. M.; Edwards, P. S.; Olejniczak, T. L.; Lampropoulos, C.; Miotkowski, I.; Ramdas, A. K.

    2016-05-01

    Magnetic properties of single crystalline Ga1-xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1-xMnxSe and Ga1-xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1-xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1-xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1-xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1-xMnxS are observed in Ga1-xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.

  19. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

    SciTech Connect

    Lawniczak-Jablonska, K. |; Jia, J.J.; Underwood, J.H.

    1997-04-01

    As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

  20. Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2016-05-01

    Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a k -dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a k -dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a Hg1 -x -yCdyMnxTe quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified k -space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

  1. Investigation of transport and magnetic properties of SiC/Cu diluted magnetic semiconductor nano-multilayer films

    NASA Astrophysics Data System (ADS)

    Sun, Ning; Li, Chunjing; Fu, Yuting; Li, Yanghua; Bu, Dechong; An, Yukai; Liu, Jiwen

    2016-09-01

    The SiC/Cu nano-multilayer films were deposited on Si substrates using radio frequency and direct current alternative sputtering technique. In this paper, the transport and magnetic properties of the films were investigated. XRR shows the SiC/Cu periodical structures of the films. XRD confirms that the 3C-SiC crystal structure is formed in the films without heating substrates. The XPS indicates that the Cu atoms substitute for Si sites of the SiC lattice and exist in a mixed valance state of Cu+ and Cu2+. The best fitting for the plots of ln ρ versus T-1/4 using the combination of the Mott and the band gap VRH models suggests that the carriers in the films are strongly localized. The films have a typical semiconductor characteristic and an obvious room temperature ferromagnetism which should arise from the bond magnetic polarons. The maximum values of saturation magnetization and carrier concentration are up to 15.2 emu/cm3 and 1.86E + 22/cm3 respectively.

  2. Raman Scattering Studies in Dilute Magnetic Semiconductor Zn(1-x)Co(x)O

    NASA Technical Reports Server (NTRS)

    Samanta, K.; Bhattacharya, P.; Katiyar, R. S.; Iwamoto, W.; Pagiluso, P. G.; Rettori, C.

    2006-01-01

    Raman spectra of ZnO and Co substituted Zn1-xCoxO (ZCO) were carried out using the Raman microprobe system with an p.,+ ion laser source of 514.5 nm wavelength. The shift towards the lower frequency side of the nonpolar E210w mode and the broadening due to Co substitution in ZnO were analyzed using the phonon confinement model. The magnetic measurements showed ferromagnetic behavior with the maximum saturation magnetization (1.2micron Beta/ErCo) for 10% Co substitution, which decreased wi th at further increase in Co concentrations. The intensities of E1(LO) at 584 cm-1 and multiphonon modes at 540 cm-1 were increased with an increase in Co substitution. The additional Raman modes in ceramic targets of ZCO spectra for higher concentration of Co substitution (x=15%-20%) were identified to be due to the spinel ZnCo2O4 secondary phase.

  3. Moment enhancement in dilute magnetic semiconductors: MnxSi1-x with x = 0.1%

    SciTech Connect

    Shaughnessy, M; Fong, C Y; Snow, R; Liu, K; Pask, J E; Yang, L H

    2009-03-12

    The experimentally determined magnetic moments/Mn, M, in Mn{sub x}Si{sub 1-x} are considered, with particular attention to the case with 5.0 {micro}{sub B}/Mn, obtained for x = 0.1%. The existing theoretical M values for neutral Mn range from 2.83 to 3.78 {micro}B/Mn. To understand the observed M = 5.0 {micro}{sub B}/Mn, we investigated Mn{sub x}Si{sub 1-x} for a series of Mn concentrations and defect configurations using a first-principles density functional method. We find a structure in which the moment is enhanced. It has 5.0 {micro}B/Mn, the Mn at a substitutional site, and a Si at a second-neighbor interstitial site in a large unit cell. Subsequent analysis shows that the observed large moment can be understood as a consequence of the weakened d-p hybridization resulting from the introduction of the second-neighbor interstitial Si and substantial isolation of the Mn-second-neighbor Si complex at such concentrations.

  4. μSR investigation of a new diluted magnetic semiconductor Li(Zn,Mn,Cu)As with Mn and Cu codoping at the same Zn sites

    NASA Astrophysics Data System (ADS)

    Guo, S. L.; Zhao, Y.; Man, H. Y.; Ding, C.; Gong, X.; Zhi, G. X.; Fu, L. C.; Gu, Y. L.; Frandsen, B. A.; Liu, L.; Cheung, S. C.; Munsie, T. J.; Wilson, M. N.; Cai, Y. P.; Luke, G. M.; Uemura, Y. J.; Ning, F. L.

    2016-09-01

    We report the successful synthesis and characterization of a new type I–II–V bulk form diluted magnetic semiconductor (DMS) Li(Zn,Mn,Cu)As, in which charge and spin doping are decoupled via (Cu,Zn) and (Mn,Zn) substitution at the same Zn sites. Ferromagnetic transition temperature up to  ∼33 K has been observed with a coercive field  ∼40 Oe for the 12.5% doping level. μSR measurements confirmed that the magnetic volume fraction reaches nearly 100% at 2 K, and the mechanism responsible for the ferromagnetic interaction in this system is the same as other bulk form DMSs.

  5. Dilute Magnetic Semiconductor and Half-Metal Behaviors in 3d Transition-Metal Doped Black and Blue Phosphorenes: A First-Principles Study.

    PubMed

    Yu, Weiyang; Zhu, Zhili; Niu, Chun-Yao; Li, Chong; Cho, Jun-Hyung; Jia, Yu

    2016-12-01

    We present first-principles density-functional calculations for the structural, electronic, and magnetic properties of substitutional 3d transition metal (TM) impurities in two-dimensional black and blue phosphorenes. We find that the magnetic properties of such substitutional impurities can be understood in terms of a simple model based on the Hund's rule. The TM-doped black phosphorenes with Ti, V, Cr, Mn, Fe, and Ni impurities show dilute magnetic semiconductor (DMS) properties while those with Sc and Co impurities show nonmagnetic properties. On the other hand, the TM-doped blue phosphorenes with V, Cr, Mn, and Fe impurities show DMS properties, with Ni impurity showing half-metal properties, whereas Sc- and Co-doped systems show nonmagnetic properties. We identify two different regimes depending on the occupation of the hybridized electronic states of TM and phosphorous atoms: (i) bonding states are completely empty or filled for Sc- and Co-doped black and blue phosphorenes, leading to nonmagnetic; (ii) non-bonding d states are partially occupied for Ti-, V-, Cr-, Mn-, Fe- and Ni-doped black and blue phosphorenes, giving rise to large and localized spin moments. These results provide a new route for the potential applications of dilute magnetic semiconductor and half-metal in spintronic devices by employing black and blue phosphorenes. PACS numbers: 73.22.-f, 75.50.Pp, 75.75. + a. PMID:26858159

  6. Dilute Magnetic Semiconductor and Half-Metal Behaviors in 3 d Transition-Metal Doped Black and Blue Phosphorenes: A First-Principles Study

    NASA Astrophysics Data System (ADS)

    Yu, Weiyang; Zhu, Zhili; Niu, Chun-Yao; Li, Chong; Cho, Jun-Hyung; Jia, Yu

    2016-02-01

    We present first-principles density-functional calculations for the structural, electronic, and magnetic properties of substitutional 3 d transition metal (TM) impurities in two-dimensional black and blue phosphorenes. We find that the magnetic properties of such substitutional impurities can be understood in terms of a simple model based on the Hund's rule. The TM-doped black phosphorenes with Ti, V, Cr, Mn, Fe, and Ni impurities show dilute magnetic semiconductor (DMS) properties while those with Sc and Co impurities show nonmagnetic properties. On the other hand, the TM-doped blue phosphorenes with V, Cr, Mn, and Fe impurities show DMS properties, with Ni impurity showing half-metal properties, whereas Sc- and Co-doped systems show nonmagnetic properties. We identify two different regimes depending on the occupation of the hybridized electronic states of TM and phosphorous atoms: (i) bonding states are completely empty or filled for Sc- and Co-doped black and blue phosphorenes, leading to nonmagnetic; (ii) non-bonding d states are partially occupied for Ti-, V-, Cr-, Mn-, Fe- and Ni-doped black and blue phosphorenes, giving rise to large and localized spin moments. These results provide a new route for the potential applications of dilute magnetic semiconductor and half-metal in spintronic devices by employing black and blue phosphorenes. PACS numbers: 73.22.-f, 75.50.Pp, 75.75. + a

  7. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  8. Magneto-optical properties in diluted magnetic semiconductors Cd 0.65-yMn 0.35Ni yTe single crystals

    NASA Astrophysics Data System (ADS)

    Hwang, Y. H.; Kim, H. K.; Cho, S.; Um, Y. H.; Park, H. Y.

    2007-03-01

    We investigated the magneto-optical properties of diluted magnetic semiconductor Cd 0.65-yMn 0.35Ni yTe single crystals grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of y<0.06. The fundamental enegy gap was increased and the lattice constant was decreased showing inverse relationship with the band gap energy with increasing Ni contents. The Verdet constant increased with increasing y, which is consistent with behavior of the magnetization. The Faraday rotation in Cd 0.65-yMn 0.35Ni yTe crystals was increased as Ni contents was increased, which is due to the increasing of magnetization with Ni contents.

  9. La(Zn1‑2xMnxCux)AsO: A 1111-type diluted magnetic semiconductor with manganese and copper codoping at Zn sites

    NASA Astrophysics Data System (ADS)

    Guo, Shengli; Zhao, Yao; Gong, Xin; Man, Huiyuan; Ding, Cui; Zhi, Guoxiang; Fu, Licheng; Gu, Yilun; Wang, Hangdong; Chen, Bin; Guo, Yang; Ning, F. L.

    2016-06-01

    We report the successful synthesis and characterization of a new layered diluted magnetic semiconductor (DMS) La(Zn,Mn,Cu)AsO which is isostructural to Fe-based “1111” superconductor. Mn and Cu are codoped into the same Zn sites to provide local moments and carriers, respectively. A ferromagnetic transition with the highest T C of ∼ 8 K has been observed for x = 0.150 from magnetization measurements. Iso-thermal magnetization plots show that the compound has a coercive field, ∼ 500 Oe, much smaller than that in (La,Ba)(Zn,Mn)AsO. The resistivity of all samples display semiconducting behavior with the doping level up to 15%.

  10. Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1−x} Fe{sub x} (Co{sub x})

    SciTech Connect

    El-Sayed, Karimat; Sedeek, K.; Heiba, Z.K.; Hantour, H.H.

    2013-06-01

    Highlights: ► The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. σRT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

  11. Structural, optical, and magnetic properties of Cu- and Ni-codoped CdO dilute magnetic nanocrystalline semiconductor: effect of hydrogen post-treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.; Bououdina, M.

    2015-06-01

    Cadmium oxide codoped with Cu and Ni ions powders was synthesised by thermal co-decomposition of a mixture of cadmium, copper, and nickel acetylacetonates. The mass ratio of Cu/Cd was fixed, while the Ni/Cd mass ratio was varied systematically. The purpose of the present study is to prepare powders having room-temperature ferromagnetic (RT-FM) properties. X-ray fluorescence (XRF) and X-ray diffraction (XRD) confirm the purity and the formation of single nanocrystalline structure of the as-prepared powders. The energy bandgap of the as-prepared powders was found to vary slightly and then increases by 3.96-38.02 % after post-H2-treatment. Magnetic measurements reveal that all as-prepared doped CdO powders gained partial (RT-FM) properties. Furthermore, the created RT-FM is dependent on the Ni% doping level. After annealing under H2 gas, a strong enhancement of RT-FM was observed, especially for 1.2 % Ni-doping-level powder where the whole powder became ferromagnetic with coercivity, remanence, and saturation magnetisation of 249.2 Oe, 4.52 memu/g, and 14.57 memu/g, respectively, representing an increase by ~241.3, 1062, and 1700 %, respectively, in comparison with the as-prepared sample. Thus, it was proved, for the first time, the possibility of producing of codoped CdO with RT-FM, where the magnetic characteristics can be tailored by doping and post-treatment under H2 atmosphere, thus a new potential candidate for dilute magnetic semiconductor (DMS).

  12. - and Photo-Modulation Studies of Semiconductors: I. Diluted Magnetic Semiconductors. I. Gallium-Arsenide - - Arsenide, Zinc-Selenide and Cadmium - Manganese - Telluride Heterostructures.

    NASA Astrophysics Data System (ADS)

    Lee, Yung-Rai

    1987-09-01

    The reflectivity and transmission spectra of the diluted magnetic semiconductors (DMS) were investigated using piezo- and photo-modulation techniques. The spectra for Cd_{rm 1-x}Mn _{rm x}Te and Zn _{rm 1-x}Mn _{rm x}Te show a characteristic exciton A of the zinc blende DMS. The energy E _{A}, linear in x, is given by 1.595 + 1.592x (eV) for Cd_{rm 1-x}Mn_{rm x} Te and 2.376 + 0.820x (eV) for Zn_ {rm 1-x}Mn_{ rm x}Te at liquid helium temperature, yielding E _{A} = 3.187(3.196) eV for the "hypothetical" zinc blende MnTe. For the wurtizite DMS's, such as Cd_{rm 1-x} Mn_{rm x}Se, signatures characteristic of the crystal field split valence band--the A and the B exciton--are observed for electric vector {rm (vec{E}) } perpendicular and parallel to the c -axis, respectively. For x <=q 0.35, Zn _{rm 1-x}Mn _{rm x}Se has the zinc blende structure; correspondingly only one exciton feature appears in the spectrum. For x > 0.35, two exciton features are observed consistent with the wurtzite structure of Zn_{rm 1-x}Mn _{rm x}Se for higher x. A signature with a sign opposite to that of free exciton is observed at ~ 2.2 eV for Cd _{rm 1-x}Mn _{rm x}Te and Cd _{rm 1-x}Mn_ {rm x}Se for x > 0.4 and for all x in Zn_{rm 1 -x}Mn_{rm x} Te and Zn_{rm 1-x} Mn_{rm x}Se. The feature, identified with a Mn^{2+} internal transition, shows no x dependence. In addition, we have observed signatures associated with imperfections in the crystals. In the magnetoreflectivity measurements, the Mn^{2+} transition fails to show any observable Zeeman shift or splitting when examined in magnetic fields up to 15.58 T. In contrast, the free exciton exhibits huge Zeeman splittings, a consequence of the large Mn^{2+}-band electron exchange interaction. These observations favor the assignment of ^6 A_1(^6 S) to ^4 T _1(^4 G) to the 2.2 eV Mn ^{2+} transition where the levels are associated with the crystal-field-split 3 d ^5 manifold of Mn^{2+ }. We have also applied the piezo- and photo

  13. Structural, electrical and magnetic properties of (Fe, Co) co-doped SnO2 diluted magnetic semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Ansari, M. Shahnawaze; Alimuddin

    2015-01-01

    Nanostructures (NSs) of basic composition Sn1-xFex/2Cox/2O2 with x=0.00, 0.04, 0.06, 0.08 and 0.1 were synthesized by citrate-gel route and characterized to understand their structural, electrical and magnetic properties. X-ray diffraction and Raman spectroscopy were used to confirm the formation of single phase rutile type tetragonal structure. The crystallite sizes calculated by using Williamson Hall were found to decrease with increasing doping level. In addition to the fundamental Raman peaks of rutile SnO2, the other three weak Raman peaks at about 505, 537 and 688 cm-1 were also observed. Field emission scanning electron microscopy studies showed the emergence of structural transformation. Electric properties such as dc electrical resistivity as a function of temperature and ac conductivity as a function of frequency were also studied. The variation of dielectric properties with frequency reveals that the dispersion is due to Maxwell-Wagner type of interfacial polarization in general. Hysteresis loops were clearly observed in M-H curves of Fe and Co co-doped SnO2 NSs. However, pure SnO2 nanoparticles (NPs) showed paramagnetic behaviour which vanished at higher values of magnetic field. The grain and grain boundary contribution in the conduction process is estimated through complex impedance plot fitted with non-linear least square (NLLS) approach which shows that the role of grain boundaries increases rapidly as compared to the grain volume with the increase of Fe and Co ions in to system.

  14. IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te epilayer grown by molecular beam epitaxy

    SciTech Connect

    Fukuma, Y.; Goto, K.; Senba, S.; Miyawaki, S.; Asada, H.; Koyanagi, T.; Sato, H.

    2008-03-01

    Growth of the IV-VI diluted magnetic semiconductor Ge{sub 1-x}Mn{sub x}Te by molecular beam epitaxy is reported. The epitaxial growth of Ge{sub 1-x}Mn{sub x}Te (x=0.13) on BaF{sub 2} (111) with a GeTe buffer layer is confirmed by x-ray diffraction and reflection high-energy electron diffraction. The ferromagnetic order is clearly established by the magnetization and magnetotransport measurements. The Curie temperature of 100 K is obtained for the hole concentration of 7.86x10{sup 20} cm{sup -3}. The existence of the strong p-d exchange which gives rise to the ferromagnetic order is revealed by the hard x-ray photoemission measurements.

  15. μSR investigation of a new diluted magnetic semiconductor Li(Zn,Mn,Cu)As with Mn and Cu codoping at the same Zn sites.

    PubMed

    Guo, S L; Zhao, Y; Man, H Y; Ding, C; Gong, X; Zhi, G X; Fu, L C; Gu, Y L; Frandsen, B A; Liu, L; Cheung, S C; Munsie, T J; Wilson, M N; Cai, Y P; Luke, G M; Uemura, Y J; Ning, F L

    2016-09-14

    We report the successful synthesis and characterization of a new type I-II-V bulk form diluted magnetic semiconductor (DMS) Li(Zn,Mn,Cu)As, in which charge and spin doping are decoupled via (Cu,Zn) and (Mn,Zn) substitution at the same Zn sites. Ferromagnetic transition temperature up to  ∼33 K has been observed with a coercive field  ∼40 Oe for the 12.5% doping level. μSR measurements confirmed that the magnetic volume fraction reaches nearly 100% at 2 K, and the mechanism responsible for the ferromagnetic interaction in this system is the same as other bulk form DMSs. PMID:27401041

  16. K and Mn co-doped BaCd2As2: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    NASA Astrophysics Data System (ADS)

    Yang, Xiaojun; Li, Yuke; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Cao, Chao; Dai, Jianhui; Tao, Qian; Cao, Guanghan; Xu, Zhu-An

    2013-12-01

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd2As2 system. Different from recently reported tetragonal ThCr2Si2-structured II-II-V based (Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2 system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming a honeycomb-like network. The Mn concentration reaches up to x ˜ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about -70%, the hexagonal structured Ba1-yKyCd2-xMnxAs2 can be served as a promising candidate for spin manipulations.

  17. Influence of Fe doping on the structural, optical and magnetic properties of ZnS diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saikia, D.; Raland, RD.; Borah, J. P.

    2016-09-01

    Fe doped ZnS nanoparticles with different concentrations of Fe, synthesized by microwave assisted co-precipitation method have been reported. The incorporation of Fe2+ and Fe3+ ions into ZnS lattice are confirmed by X-ray diffraction (XRD) and Electron Paramagnetic resonance (EPR) study. XRD and High Resolution Transmission electron Microscope (HRTEM) results confirm the phase purity of the samples and indicate a reduction of the particle size with increase in Fe concentration. EDAX analysis confirms the presence of Zn, S and Fe in the samples. A yellow-orange emission peak is observed in Photoluminescence (PL) spectra which exhibits the Characteristic 4T2 (4G)-6A1 (6S) transition of Fe3+ ion. The room temperature magnetic studies as analyzed from M-H curves were investigated from vibrating samples magnetometer (VSM) which shows a weak ferro and superparamagnetic like behavior in 1% and 3% Fe-doped ZnS nanocrystals, whereas; at 10% Fe-doping concentrations, antiferromagnetism behavior is achieved. The ZFC-FC measurement reveals that the blocking temperature of the nanoparticle is above the room temperature.

  18. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    SciTech Connect

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M. E-mail: paras.shirage@gmail.com; J, Aneesh; Adarsh, K. V.

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  19. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    NASA Astrophysics Data System (ADS)

    Rana, Amit Kumar; J, Aneesh; Kumar, Yogendra; M. S, Arjunan; Adarsh, K. V.; Sen, Somaditya; Shirage, Parasharam M.

    2015-12-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  20. Electronic and magnetic properties of a new 2D diluted magnetic semiconductor La1 - x Ba x Zn1 - x Mn x AsO from Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Bannikov, V. V.; Ivanovskii, A. L.

    2013-12-01

    Very recently, on the example of hole- and spin-doped semiconductor LaZnAsO, quite an unexpected area of potential applications of quasi-two-dimensional 1111-like phases was proposed (C. Ding et al., Phys. Rev. B 88, 041102R (2013)) as a promising platform for searching for new diluted magnetic semiconductors (DMSs). In this work, by means of the ab initio calculations, we have examined in detail the electronic and magnetic properties of LaZnAsO alloyed with Ba and Mn. Our results demonstrate that Ba or Mn doping transforms the parent non-magnetic semiconductor LaZnAsO into a non-magnetic metal or a magnetic semiconductor, respectively. On the other hand, the joint effect of these dopants (i.e., co-doping Ba + Mn) leads to transition of La0.89Ba0.11Zn0.89Mn0.11AsO into the state of magnetic metal, which is formed by alternately stacked semiconducting non-magnetic blocks [La0.89Ba0.11O] and metallic-like magnetic blocks [Zn0.89Mn0.11As].

  1. (La1-xBax)(Zn1-xMnx)AsO: A two-dimensional 1111-type diluted magnetic semiconductor in bulk form

    NASA Astrophysics Data System (ADS)

    Ding, Cui; Man, Huiyuan; Qin, Chuan; Lu, Jicai; Sun, Yunlei; Wang, Quan; Yu, Biqiong; Feng, Chunmu; Goko, T.; Arguello, C. J.; Liu, L.; Frandsen, B. A.; Uemura, Y. J.; Wang, Hangdong; Luetkens, H.; Morenzoni, E.; Han, W.; Jin, C. Q.; Munsie, T.; Williams, T. J.; D'Ortenzio, R. M.; Medina, T.; Luke, G. M.; Imai, T.; Ning, F. L.

    2013-07-01

    We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 ⩽ x ⩽ 0.2) with a layered crystal structure identical to that of the 1111-type FeAs superconductors. No ferromagnetic order occurs with (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) substitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ˜40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in the entire volume, with the relationship between the internal field and TC consistent with the trend found in (Ga,Mn)As and the 111-type Li(Zn,Mn)As and the 122-type (Ba,K)(Zn,Mn)2As2 systems.

  2. Pressure effect on the magnetism of the diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2 with independent spin and charge doping

    NASA Astrophysics Data System (ADS)

    Sun, F.; Li, N. N.; Chen, B. J.; Jia, Y. T.; Zhang, L. J.; Li, W. M.; Zhao, G. Q.; Xing, L. Y.; Fabbris, G.; Wang, Y. G.; Deng, Z.; Uemura, Y. J.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

    2016-06-01

    We used x-ray magnetic circular dichroism (XMCD) to probe the ferromagnetic properties of As p -symmetric (4 p ) states in the recently synthesized diluted magnetic semiconductor (B a1 -xKx) (Zn1-yM ny) 2A s2 system under ambient- and high-pressure conditions. The As K -edge XMCD signal scales with the sample magnetization (dominated by Mn) and scales with the ferromagnetic ordering temperature T c , and hence it is representative of the bulk magnetization. The XMCD intensity gradually decreases upon compression and vanishes at around 25 GPa, indicating quenching of ferromagnetism at this pressure. Transport measurements show a concomitant increase in conductivity with pressure, leading to a nearly metallic state at about the same pressure where magnetic order collapses. High-pressure x-ray diffraction shows an absence of structural transitions to 40 GPa. The results indicate that the mobility of doped holes, probed by both transport and x-ray absorption spectroscopy (4 p band broadening), is intimately connected with the mechanism of magnetic ordering in this class of compounds and that its control using external pressure provides an alternative route for tuning the magnetic properties in diluted magnetic semiconductor materials.

  3. Microstructural and Optical properties of transition metal (Cu) doped ZnO diluted magnetic semiconductor nano thin films fabricated by sol gel method

    NASA Astrophysics Data System (ADS)

    Ozturk, Ozgur; Asikuzun, Elif; Tasci, A. Tolga; Arda, Lutfi; Demirozu Senol, Sevim; Celik, Sukru; Terzioglu, Cabir

    Undoped and Cu (Copper) doped ZnO (Zn1-xCuxO) semiconductor thin films were produced by using sol-gel method. Cu was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine (MEA) were used as solvent and stabilizer. In this study, the effect of Cu doping was investigated on microstructural and optical properties of ZnO DMS thin films. XRD, SEM, AFM and UV-VIS spectrometer measurements were performed for the microstructural and optical characterization. XRD, SEM and AFM results were showed that all of Cu doped ZnO based thin films have a hexagonal structure. The grain size of Cu doped ZnO thin films and morphology of surface were changed with increasing Cu doping. The optical transmittance of transition metal (Cu) doped ZnO thin films were decreased with doping. Keywords:Diluted Magnetic Semiconductor (DMS), Thin Film, Cu-doping, Bandgap Energy, ZnO. This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KU-BAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  4. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    SciTech Connect

    Ahmed, Raju; Moslehuddin, A.S.M.; Mahmood, Zahid Hasan; Hossain, A.K.M. Akther

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  5. Generalized gradient calculations of magneto-electronic properties for diluted magnetic semiconductors ZnMnS and ZnMnSe

    NASA Astrophysics Data System (ADS)

    Méçabih, S.; Benguerine, K.; Benosman, N.; Abbar, B.; Bouhafs, B.

    2008-10-01

    Using the first-principles method, we investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn 1-xMn xS and Zn 1-xMn xSe with 25% of Mn. The calculations are performed by a developed full-potential augmented plane wave plus local orbitals (FP-L/APW+lo) method within the spin density functional theory. As exchange-correlation potential we used the new generalized gradient approximation GGA form. Structural properties are determined from the total energy calculations. We show that the cohesive energy of ZnMnS and ZnMnSe exceeds that of the parent elements ZnS and ZnSe. We discuss the electronic structures, total and partial densities of states and local moments. We have calculated the Mn 3d spin-exchange splitting energies Δ x( d), which reflect the effective potential of the majority and the minority spin. From the charge spin densities calculations, we study the nature of the bonding and the effect of the Mn 3d states on these densities. Furthermore, we found that p-d hybridization reduces the local moment of Mn from its free space value of 5.0 μB.

  6. Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

    NASA Astrophysics Data System (ADS)

    Husnain, G.; Shu-De, Yao; Ahmad, Ishaq; Rafique, H. M.; Mahmood, Arshad

    2012-03-01

    In this study, we present the structural and magnetic characteristics of cobalt ions implantation at a high-fluence (5×1016 cm-2) into n-GaN epilayer of thickness about 1.6 μm. The n-GaN was grown on sapphire by metal organic chemical vapor deposition (MOCVD). Rutherford backscattering channeling was used for the structural study. After implantation, samples were annealed at 700, 800 and 900 °C by rapid thermal annealing in ambient N2. XRD measurements did not show any secondary phase or metal related-peaks. High resolution X-ray diffraction (HRXRD) was performed as well to characterize structures. Well-defined hysteresis loops were observed at 5 K and room temperature using alternating gradient magnetometer AGM and Superconducting Quantum Interference Device (SQUID) magnetometer. Temperature-dependent magnetization indicated magnetic moment at the lowest temperatures and retained magnetization up to 380 K for cobalt-ion-implanted samples.

  7. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  8. Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Muthukumaran, S.; Ashokkumar, M.

    2016-02-01

    Zn0.96- x Cu0.04Fe x O (0 ≤ x ≤ 0.04) nanoparticles synthesized via the sol-gel technique had a hexagonal wurtzite ZnO structure without any Fe/Cu-related secondary phases. The crystallite size was reduced from Fe = 0% (23 nm) to Fe = 4% (16 nm) due to the suppression of grain surface growth by foreign impurities. Doping of higher Fe concentrations into Zn-Cu-O suppressed the ultra-violet (UV) emission band and balanced the defect-related visible emissions. The decrease of the UV and green emission intensity ratio ( I UV/ I green) and the UV and blue emission intensity ratio ( I UV/ I blue) in photoluminescence spectra implied an increase of defect states with the increase of Fe concentrations. All the samples showed clear room temperature ferromagnetism. The saturation magnetization was increased by Fe co-doping which was attributed to the interaction between Fe-Fe ions. X-ray photoelectron spectra confirmed the absence of secondary phases like Fe3O4.

  9. Electronic structure and magnetism in some transition metal nitrides: Manganese-doped scandium nitride, dilute magnetic semiconductor and chromium nitride, Mott insulator

    NASA Astrophysics Data System (ADS)

    Herwadkar, Aditi A.

    The thesis presented here deal with calculations of electronic and magnetic properties of transition metal based materials. Electronic structure of Mn-doped ScN: a possible new magnetic semiconductor. We performed fully relaxed full-potential linear muffin-tin orbital method calculations of Mn-doped ScN using a supercell approach. We found that a t2g like defect level exists in the gap and gives rise to a magnetic moment between 2 an 3 muB. Calculations for 64 atom cells with two Mn in 1st-4th neighbor positions indicated a preference for ferromagnetic coupling. By mapping the energy differences on a Heisenberg Hamiltonian and assuming interactions with distant atoms except those in the adjacent unit cells are zero, we extracted the exchange interactions, which were found to be rather large and indicate a Curie temperature above room temperature even for only 3% Mn. Calculations of the miscibility indicated only 1% equilibrium miscibility at typical growth temperatures. However, non-equilibrium growth techniques have shown that in practice mixed alloys up to 26% Mn can be grown. We also studied the effect of n-type doping. Unexpectedly, Mn defects in the negative charge state still have an even larger magnetic moment with an increase in the eg state contribution. Subsequently, we carried out further calculations of the exchange interactions using non-collinear magnetic configurations in which the spin is slowly rotated. It was found that the previous calculations overestimate the J 0 = sumi J0i, i.e. the sum of all interactions connected to a given site, by about 30%. Further studies using the Liechtenstein linear response approach show that the latter is a sum over many long range interactions extending significantly beyond the range of the cells we had used. In this approach the long range interactions are obtained by Fourier transform of the Jij (k) for a mesh of k-points in the supercell. The nearest neighbor interactions are found to be an order of magnitude

  10. Characteristic Behavior of ESR Linewidth in Cr-doped PbTe-based Diluted Magnetic Semiconductors in the Vicinity of Ferromagnetic Ordering Transition

    NASA Astrophysics Data System (ADS)

    Zvereva, E.; Savelieva, O.; Ibragimov, S.; Slyn'ko, E.; Slyn'ko, V.

    2011-12-01

    Here we report on magnetization (T = 1.8-400 K, B≤7 T) and X-band ESR study (f = 9.1-9.6 GHz, T = 90-450 K) for Pb1-yCryTe ferromagnetic semiconductor and two new PbTe-based semiconductors Pb1-x-ySnxCryTe and Pb1-x-yMgxCryTe in the vicinity of the transition to ferromagnetic state. It was found that these semiconductors demonstrate ferromagnetism at temperatures higher than room temperature. The Curie temperature TC varies in a wide range (150-390 K) depending on the matrix composition and chromium content. In the paramagnetic phase the ESR spectra show a single asymmetrical line of Dysonian shape due to skin effect, typical of conducting materials. Regardless of matrix composition the effective g-factor tends to the saturation value g = 2.08±0.02 and the linewidth is ΔB≈0.08 T at the highest temperature limit. Upon approaching TC from above g-factor slowly increases, while the linewidth falls approximately two times and passes through the minimum at T*≈1.2TC. In the vicinity of TC the ESR parameters show distinct anomalies, which were associated with presence of strong magnetic fluctuation at an onset of FM ordering.

  11. Atomically thin dilute magnetism in Co-doped phosphorene

    NASA Astrophysics Data System (ADS)

    Seixas, L.; Carvalho, A.; Castro Neto, A. H.

    2015-04-01

    Two-dimensional dilute magnetic semiconductors can provide fundamental insights into the very nature of magnetic order and their manipulation through electron and hole doping. Besides the fundamental interest, due to the possibility of control of charge density, they can be extremely important in spintronics applications such as spin valve and spin-based transistors. In this paper, we studied a two-dimensional dilute magnetic semiconductor consisting of a phosphorene monolayer doped with cobalt atoms in substitutional and interstitial defects. We show that these defects can be stabilized and are electrically active. Furthermore, by including holes or electrons by a potential gate, the exchange interaction and magnetic order can be engineered, and may even induce a ferromagnetic-to-antiferromagnetic phase transition in p -doped phosphorene. At a Co concentration of 2.7%, we estimate a Curie temperature of TCMF A=466 K in the mean-field approximation.

  12. Electronic and magnetic properties of a new diluted magnetic semiconductor Li(Zn,TM)As (TM:V, Cr, Mn, Fe, Co and Ni)

    NASA Astrophysics Data System (ADS)

    Tao, H. L.; Lin, L.; Zhang, Z. H.; He, M.; Song, B.

    2016-07-01

    First-principles calculations were performed to study electronic structures and magnetic properties of transition metal (TM) doped LiZnAs system. V, Mn, Fe and Co doped LiZnAs preferred anti-ferromagnetic states while no magnetisms were found for Cr and Ni-doped LiZnAs system. In contrast, V/Li, Cr/Li, Mn/Li, Fe/Li and Co/Li codoped LiZnAs preferred ferromagnetic couplings between the TM atoms other than the anti-ferromagnetic states. Thus off-stoichiometry of Li is very essential for the preparation of ferromagnetic LiZnAs materials. For Ni/Li-codoped LiZnAs, anti-ferromagnetic is more stable, which is resulted from the through-bond spin polarization mechanism.

  13. Theory of carrier mediated ferromagnetism in dilute magnetic oxides

    SciTech Connect

    Calderon, M.J. Das Sarma, S.

    2007-11-15

    We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic oxide semiconductors in the light of the experimental evidence reported in the literature. We propose that a combination of percolation of magnetic polarons at lower temperature and Ruderman-Kittel-Kasuya-Yosida ferromagnetism at higher temperature may be the reason for the very high critical temperatures measured (up to {approx}700 K)

  14. Structural, optical and magnetic properties of Zn 1- xCo xO dilute magnetic semiconductors thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Yang, Shanying; Man, B. Y.; Liu, M.; Chen, C. S.; Gao, X. G.; Wang, C. C.; Hu, B.

    2010-09-01

    We fabricated Zn 1- xCo xO ( x=0.05) thin films on sapphire (0 0 0 1) substrates by the pulsed laser deposition (PLD) method at various temperatures in an oxygen-deficient ambient. X-ray diffraction (XRD) spectra, UV-vis transmittance spectra, X-ray photoelectron spectroscopy and photoluminescence (PL) were used for charecterization. All samples possessed the wurtzite structure with the preferential c-axis orientation; PL located at about 418, 450 and 471 nm was observed; Co 2+ ions incorporated into the ZnO lattice with substitution for Zn 2+ ions, oxygen vacancies, oxygen antisites and Zn interstitials existed in the as-samples. Results of magnetic property of the films investigated by an alternating gradient magnetometer (AGM) indicated that all samples take on room temperature ferromagnetism. It suggested that the ferromagnetism originated from the Co 2+-Co 2+ exchange interaction related to oxygen vacancies, oxygen antisites and Zn interstitials.

  15. (Ba1-xKx)(Cu2-xMnx)Se2: A copper-based bulk form diluted magnetic semiconductor with orthorhombic BaCu2S2-type structure

    NASA Astrophysics Data System (ADS)

    Guo, Shengli; Man, Huiyuan; Gong, Xin; Ding, Cui; Zhao, Yao; Chen, Bin; Guo, Yang; Wang, Hangdong; Ning, F. L.

    2016-02-01

    A new copper-based bulk form diluted magnetic semiconductor (DMS) (Ba1-xKx)(Cu2-xMnx)Se2 (x=0.075, 0.10, 0.125, and 0.15) with TC ∼18 K has been synthesized. K substitution for Ba introduces hole-type carriers, while Mn substitution for Cu provides local spins. Different from previous reported DMSs, this material crystallizes into orthorhombic BaCu2S2-type crystal structure. No ferromagnetism is observed when only doping Mn, and clear ferromagnetic transition and hysteresis loop have been observed as K and Mn are codoped into the parent compound BaCu2Se2.

  16. The synthesis and characterization of 1111-type diluted magnetic semiconductors (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co)

    NASA Astrophysics Data System (ADS)

    Lu, Jicai; Man, Huiyuan; Ding, Cui; Wang, Quan; Yu, Biqiong; Guo, Shengli; Wang, Hangdong; Chen, Bin; Han, Wei; Jin, Changqing; Uemura, Yasutomo J.; Ning, Fanlong

    2013-09-01

    The doping effect of Sr and transition metals Mn, Fe, Co into the direct-gap semiconductor LaZnAsO has been investigated. Our results indicate that the single phase ZrCuSiAs-type tetragonal crystal structure is preserved in (La1-xSrx)(Zn1-xTMx)AsO (TM = Mn, Fe, Co) with the doping level up to x = 0.1 . While the system remains semiconducting, doping with Sr and Mn results in ferromagnetic order with T_C\\sim30\\ \\text{K} , and doping with Sr and Fe results in a spin-glass-like state below {\\sim}6\\ \\text{K} with a saturation moment of ˜0.02 μB/Fe, an order of magnitude smaller than the ˜0.4 μB/Mn of Sr- and Mn-doped samples. The same type of magnetic state is observed neither for (Zn,Fe) substitution without carrier doping, nor for Sr- and Co-doped specimens.

  17. Elimination of charge carrier trapping in diluted semiconductors

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, D.; Kunz, A.; Wetzelaer, G. A. H.; Michels, J. J.; Crăciun, N. I.; Koynov, K.; Lieberwirth, I.; Blom, P. W. M.

    2016-06-01

    In 1962, Mark and Helfrich demonstrated that the current in a semiconductor containing traps is reduced by N/Ntr, with N the amount of transport sites, Nt the amount of traps and r a number that depends on the trap energy distribution. For r > 1, the possibility opens that trapping effects can be nearly eliminated when N and Nt are simultaneously reduced. Solution-processed conjugated polymers are an excellent model system to test this hypothesis, because they can be easily diluted by blending them with a high-bandgap semiconductor. We demonstrate that in conjugated polymer blends with 10% active semiconductor and 90% high-bandgap host, the typical strong electron trapping can be effectively eliminated. As a result we were able to fabricate polymer light-emitting diodes with balanced electron and hole transport and reduced non-radiative trap-assisted recombination, leading to a doubling of their efficiency at nearly ten times lower material costs.

  18. Structural and Optical properties of Er doped ZnO diluted magnetic semiconductor nano thin films produced by sol gel method

    NASA Astrophysics Data System (ADS)

    Tasci, A. Tolga; Ozturk, Ozgur; Asikuzun, Elif; Arda, Lutfi; Celik, Sukru; Terzioglu, Cabir

    Undoped and Er doped ZnO (Zn1-xErxO) transparent semiconductor thin films were coated using sol-gel method on non-alkali glass. Erbium was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine were used as solvent and stabilizer. In this study, the effect of Er doping was examined on the structural and optical properties of ZnO DMS thin films. XRD, SEM and UV-VIS-NIR spectrometer measurements were performed for the structural and optical characterization. XRD results showed that, all of Er doped ZnO thin films have a hexagonal structure. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency (>84) in the visible region (400-700 nm). This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-03/2013-41 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  19. Coherent magnetic semiconductor nanodot arrays

    PubMed Central

    2011-01-01

    In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation. PMID:21711627

  20. First-principles study on half-metallic ferromagnetism in the diluted magnetic semiconductor (DMS) Al1-xMnxP compounds

    NASA Astrophysics Data System (ADS)

    Kervan, Selçuk; Kervan, Nazmiye

    2015-05-01

    We report the half-metallic properties of the Mn-doped AlP compounds using the full-potential linearized augmented plane wave (FPLAPW) method within the generalized gradient approximation (GGA) embedded in WIEN2k code. Geometry optimization for the Al1-xMnxP compounds was carried out for the different Mn concentrations x=0.0, 0.0625, 0.125 and 0.25 using supercell. The calculated band structure and density of states show that the half-metallic ferromagnetism is stable for the x=0.0625, 0.125 and 0.25 with a total magnetization of 4 μB/f.u. The total magnetic moment is mainly due to Mn-d states occurring around the Fermi level. The half-metallic band gaps are 1.70, 1.52 and 1.68 eV for x=0.0625, 0.125 and 0.25, respectively. We also performed GGA with the Hubbard correction (GGA+U) to minimize self-interaction errors.

  1. Sol-gel derived Zn1-xFexS diluted magnetic semiconductor thin films: Compositional dependent room or above room temperature ferromagnetism

    NASA Astrophysics Data System (ADS)

    Goktas, A.

    2015-06-01

    Zn1-xFexS (where x = 0.00, 0.01, 0.03, 0.05, 0.1 and 0.2) thin films were synthesized by sol-gel method. To investigate the origin of room or above room temperature ferromagnetism in these films several tools such as XRD, SEM, XPS, UV-Vis spectrophotometer and SQUİD magnetometer were used. The XRD studies showed that the phase singularity of ZnS zinc blende (hexagonal) structure. The SEM images indicated the homogeneous film surface with no cracking and increased particle size with increasing Fe-doping ratio except for 1 at.% Fe dopant. The presence of Zn, Fe, S, Si and O atoms in the films was observed in EDS spectrum. The XPS studies confirmed that the existence of Fe3+ ions in host ZnS thin films. In the UV-Vis measurements the band gap energy corresponding to the absorption edge was estimated to be approximately in the range of 3.59-2.08 eV, depending on the Fe doping level. The magnetization measurements revealed that the films had paramagnetic or ferromagnetic order depending on Fe doping ratio at 5, 100, 200, 300 and 350 K. The observed room or above room temperature ferromagnetism can be attributed to the strong p-d exchange interaction between Fe3+ d and anion (S2-) p orbitals as well as impurities.

  2. Fermi surfaces and p -d hybridization in the diluted magnetic semiconductor Ba1 -xKx(Zn1-yMny) 2As2 studied by soft x-ray angle-resolved photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Suzuki, H.; Zhao, G. Q.; Zhao, K.; Chen, B. J.; Horio, M.; Koshiishi, K.; Xu, J.; Kobayashi, M.; Minohara, M.; Sakai, E.; Horiba, K.; Kumigashira, H.; Gu, Bo; Maekawa, S.; Uemura, Y. J.; Jin, C. Q.; Fujimori, A.

    2015-12-01

    The electronic structure of the new diluted magnetic semiconductor Ba1-xKx(Zn1-yMny )2As2 (x =0.30 , y =0.15 ) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). Measurements with soft x rays clarify the host valence-band electronic structure primarily composed of the As 4 p states. Two hole pockets around the Γ point, a hole corrugated cylinder surrounding the Γ and Z points, and an electron pocket around the Z point are observed, and explain the metallic transport of Ba1-xKx(Zn1-yMny )2As2 . This is contrasted with Ga1-xMnxAs (GaMnAs), where it is located above the As 4 p valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo-resonance-like) Mn 3 d impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn 3 d and the As 4 p orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in Ba1-xKx(Zn1-yMny )2As2 and in the impurity band in GaMnAs.

  3. Detecting excitation and magnetization of individual dopants in a semiconductor.

    PubMed

    Khajetoorians, Alexander A; Chilian, Bruno; Wiebe, Jens; Schuwalow, Sergej; Lechermann, Frank; Wiesendanger, Roland

    2010-10-28

    An individual magnetic atom doped into a semiconductor is a promising building block for bottom-up spintronic devices and quantum logic gates. Moreover, it provides a perfect model system for the atomic-scale investigation of fundamental effects such as magnetism in dilute magnetic semiconductors. However, dopants in semiconductors so far have not been studied by magnetically sensitive techniques with atomic resolution that correlate the atomic structure with the dopant's magnetism. Here we show electrical excitation and read-out of a spin associated with a single magnetic dopant in a semiconductor host. We use spin-resolved scanning tunnelling spectroscopy to measure the spin excitations and the magnetization curve of individual iron surface-dopants embedded within a two-dimensional electron gas confined to an indium antimonide (110) surface. The dopants act like isolated quantum spins the states of which are governed by a substantial magnetic anisotropy that forces the spin to lie in the surface plane. This result is corroborated by our first principles calculations. The demonstrated methodology opens new routes for the investigation of sample systems that are more widely studied in the field of spintronics-that is, Mn in GaAs (ref. 5), magnetic ions in semiconductor quantum dots, nitrogen-vacancy centres in diamond and phosphorus spins in silicon. PMID:20981095

  4. Photoemission and magnetic circular dichroism studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Fujimori, Atsushi

    2005-03-01

    Recently, a series of novel ferromagnetic semiconductors have been synthesized using MBE and related techniques and have attracted much attention because of unknown mechanisms of carrier-induced ferromagnetism and potential applications as "spin electronics" devices. Some new materials show ferromagnetism even well above room temperature. Photoemission spectroscopy has been used to study the d orbitals of the dilute transition-metal atoms, mostly Mn, and their hybridization with the host band states [1]. Soft x-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the transition-metal 2p-3d absorption edges are useful techniques to study the valence and spin states of the transition-metal atoms. Furthermore, since MCD has different sensitivities to the ferromagnetic and paramagnetic components at different temperatures and magnetic fileds, if the sample is a mixture of ferromagnetic and non-ferromagnetic transition- metal atoms, it can be used to separate the two components and to study their electronic structures. In this talk, results are presented for the prototypical diluted ferromagnetic semiconductor Ga1-xMnxAs [2] and the room-temperature ferromagnets Zn1-xCoxO and Ti1-xCoxO2.I acknowledge collaboration with Y. Ishida, J.-I. Hwang, M. Kobayashi, Y. Takeda, Y. Saitoh, J. Okamoto, T. Okane, Y. Muramatsu, K. Mamiya, T. Koide, A. Tanaka, M. Tanaka, Hayashi, S. Ohya, T. Kondo, H. Munekata, H. Saeki, H. Tabata, T. Kawai, Y. Matsumoto, H. Koinuma, T. Fukumura and M. Kawasaki. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area "Semiconductor nano-spintronics" (14076209) from MEXT, Japan.1. J. Okabayashi et al., Phys. Rev. B 64, 125304 (2001).2. A. Fujimori et al., J. Electron Spectrosc. Relat. Phenom., in press.

  5. Zero-field optical manipulation of magnetic ions in semiconductors.

    PubMed

    Myers, R C; Mikkelsen, M H; Tang, J-M; Gossard, A C; Flatté, M E; Awschalom, D D

    2008-03-01

    Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible. PMID:18278049

  6. Polaronic trapping in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  7. Simulations of the magnetization and magnetoviscosity of dilute magnetic fluids

    NASA Astrophysics Data System (ADS)

    Sanchez Toro, Jorge Hernan

    In this work was studied the rotational Brownian motion of magnetic spherical and tri-axial ellipsoidal particles suspended in a Newtonian fluid, in the dilute suspension limit, under applied shear and magnetic fields by Brownian dynamics simulation to determine the magnetization and magnetoviscosity of the suspension. The algorithm describing the change in the magnetization and magnetoviscosity of the suspension was derived from the stochastic angular momentum equation using the fluctuation-dissipation theorem and a quaternion formulation of orientation space. Results are presented for the response of dilute suspensions of magnetic nanoparticles to constant and transient magnetic fields with and without simple shear flow fields. Simulation results are in agreement with the Langevin function for equilibrium magnetization and with single-exponential relaxation from equilibrium at small fields using Perrin's effective relaxation time. Dynamic susceptibilities for ellipsoidal particles of different aspect ratios were obtained from the response to oscillating magnetic fields of different frequencies and described by Debye's model for the complex susceptibility using Perrin's effective relaxation time. Suspensions of ellipsoidal particles show a significant effect of aspect ratio on the intrinsic magnetoviscosity of the suspension, and this effect is more pronounced as the aspect ratio becomes more extreme. The use of an effective rotational diffusion coefficient Dr,eff collapses the normalized intrinsic magnetoviscosity of all suspensions to a master curve as a function of Peclet number and the Langevin parameter alpha = (mu0muH)/(kBT), up to a critical value of alpha for which the results for suspensions of spherical particles deviate from those of suspensions of ellipsoids. This discrepancy is attributed to the action of the shear-torque on the ellipsoidal particles, which tends to orient the particles in the direction of maximum deformation of the simple shear flow

  8. Lieb-Mattis ferrimagnetism in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kuzian, R. O.; Richter, J.; Kuz'min, M. D.; Hayn, R.

    2016-06-01

    We show the possibility of long-range ferrimagnetic ordering with a saturation magnetization of ˜1 μB per spin for arbitrarily low concentration of magnetic impurities in semiconductors, provided that the impurities form a superstructure satisfying the conditions of the Lieb-Mattis theorem. Explicit examples of such superstructures are given for the wurtzite lattice, and the temperature of ferrimagnetic transition is estimated from a high-temperature expansion. Exact diagonalization studies show that small fragments of the structure exhibit enhanced magnetic response and isotropic superparamagnetism at low temperatures. A quantum transition in a high magnetic field is considered and similar superstructures in cubic semiconductors are discussed as well.

  9. Magnetic Properties of Diluted Fcc System Nickel

    NASA Astrophysics Data System (ADS)

    Feng, Zhen

    Starting from Ni and Mg nitrates, about 20 samples of Ni_{rm p}Mg _{rm 1-p}O (0.06 <=q p <=q 0.86) were prepared and X-ray diffraction studies showed the samples to have the NaCl structure with the lattice constant fitting the equation a(p) = 4.2115 - 0.0340p A. Temperature dependent dc magnetic susceptibility (chi ) studies of the samples were carried out between 1.8K and 600K using a SQUID magnetometer and the Neel temperature T_{rm N} were determined from the peak in partial(chiT)/ partialT. The variation of t = T _{rm N}(p)/T _{rm N}(1) versus p is compared with that in Co_{rm p}Mg _{rm 1-p}O. For both systems, the variations for p > 0.31 are found to fit the predicted values for a simple cubic Heisenberg antiferromagnet and a theoretical basis for this anomalous results is advanced. The experimental percolation threshold p_{rm c} = 0.15 +/- 0.01. For p_ {rm c} <=q p <=q 0.33, chi below T_{rm N} shows irreversible behavior for the zero-field-cooled and field -cooled cases, suggestive of spin-glass-like behavior, also observed in other diluted fcc antiferromagnets such as Co_{rm p}Mg _{rm 1-p}O and Eu _{rm p}Sr_ {rm 1-p}Te. It is suggested that the differences in the t vs p variations for p < 0.33 in Ni_{rm p} Mg_{rm 1-p}O, Co_{rm p}Mg _{rm 1-p}O and Eu _{rm p}Sr_ {rm 1-p}Te may be related to the differences in the ratio of the next-nearest-neighbor to nearest-neighbor exchange constants in these systems. A higher order correction to Curie-Weiss law was applied for sample with 0.19 <=q p <=q 0.59 which explains why 1/ chi curve versus T bends downward with decreasing temperatures. For the sample Ni_{0.33} Mg_{0.67}O, the magnetization M versus magnetic field H (0 to 0.2T) are measured with temperature ranging from 5.2K to 13.4K at intervals of 0.2K. The magnitude of the non-linear susceptibility, a_3, is determined from the M versus H data at different temperatures. The divergence of a _3 around 9.4 +/- 0.6K indicates spin-glass behavior in this system.

  10. Diluted II-VI oxide semiconductors with multiple band gaps.

    PubMed

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%. PMID:14683137

  11. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  12. Magnetization and Hysteresis of Dilute Magnetic-Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Skomski, Ralph; Balamurugan, B.; Sellmyer, D. J.

    2014-03-01

    Real-structure imperfections in dilute magnetic oxides tend to create small concentrations of local magnetic moments that are coupled by fairly long-range exchange interactions, mediated by p-electrons. The robustness of these interactions is caused by the strong overlap of the p orbitals, as contrasted to the much weaker interatomic exchange involving iron-series 3d electrons. The net exchange between defect moments can be positive or negative, which gives rise to spin structures with very small net moments. Similarly, the moments exhibit magnetocrystalline anisotropy, reinforced by electron hopping to and from 3d states and generally undergoing some random-anuisotropy averaging. Since the coercivity scales as 2K1/M and M is small, this creates pronounced and -- in thin films -- strongly anisotropic hysteresis loops. In finite systems with N moments, both K1 and M are reduced by a factor of order N1/2 due to random anisotropy and moment compensation, respectively, so that that typical coercivities are comparable to bulk magnets. Thermal activation readily randomizes the net moment of small oxide particles, so that the moment is easier to measure in compacted or aggregated particle ensembles. This research is supported by DOE (BES).

  13. Diluted Ising Magnet on the Bethe Lattice

    NASA Astrophysics Data System (ADS)

    Semkin, S. V.; Smagin, V. P.

    2016-04-01

    A solution is obtained for the Ising model on the Bethe lattice comprising a mixture of magnetic and nonmagnetic atoms in a thermodynamic equilibrium. The concentration and temperature dependences of spontaneous magnetization, the Curie temperature, and the percolation threshold are found together with the pair correlation functions of three types that characterize the arrangement of impurity atoms and the correlation of magnetic moments. It is demonstrated that the system with mobile impurities in the thermodynamic equilibrium can be brought closer to the system with frozen impurities by adjusting the parameters of interatomic interaction.

  14. Magnetic relaxation of diluted and self-assembled cobalt nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhang, X. X.; Wen, G. H.; Xiao, Gang; Sun, Shouheng

    2003-04-01

    We have studied the magnetic relaxation of monodispersed 4 nm cubic ɛ-cobalt nanocrystals in both randomly oriented and pre-aligned assemblies. The blocking temperature TB, for the closely packed Co nanocrystal assemblies, is 30% higher than that of the highly diluted and well-dispersed Co nanocrystal-organic composites. This increase is attributed to the strong magnetic dipole interaction induced from the close packing of the nanocrystals. It is found that the frequency-dependent susceptibility data, obtained from the diluted samples, can be fitted to the half-circle Argand Diagrams, indicating a single barrier (or very narrow energy distribution) of the nanocrystals. This agrees well with the physical observation from TEM that the nanocrystals are monodispersed. The long time magnetic relaxation measurements reveal that energy barrier distribution in a pre-aligned nanocrystal assembly is significantly different from that in a randomly oriented one.

  15. Semiconductor Crystal Growth in Static and Rotating Magnetic fields

    NASA Technical Reports Server (NTRS)

    Volz, Martin

    2004-01-01

    Magnetic fields have been applied during the growth of bulk semiconductor crystals to control the convective flow behavior of the melt. A static magnetic field established Lorentz forces which tend to reduce the convective intensity in the melt. At sufficiently high magnetic field strengths, a boundary layer is established ahead of the solid-liquid interface where mass transport is dominated by diffusion. This can have a significant effect on segregation behavior and can eliminate striations in grown crystals resulting from convective instabilities. Experiments on dilute (Ge:Ga) and solid solution (Ge-Si) semiconductor systems show a transition from a completely mixed convective state to a diffusion-controlled state between 0 and 5 Tesla. In HgCdTe, radial segregation approached the diffusion limited regime and the curvature of the solid-liquid interface was reduced by a factor of 3 during growth in magnetic fields in excess of 0.5 Tesla. Convection can also be controlled during growth at reduced gravitational levels. However, the direction of the residual steady-state acceleration vector can compromise this effect if it cannot be controlled. A magnetic field in reduced gravity can suppress disturbances caused by residual transverse accelerations and by random non-steady accelerations. Indeed, a joint program between NASA and the NHMFL resulted in the construction of a prototype spaceflight magnet for crystal growth applications. An alternative to the suppression of convection by static magnetic fields and reduced gravity is the imposition of controlled steady flow generated by rotating magnetic fields (RMF)'s. The potential benefits of an RMF include homogenization of the melt temperature and concentration distribution, and control of the solid-liquid interface shape. Adjusting the strength and frequency of the applied magnetic field allows tailoring of the resultant flow field. A limitation of RMF's is that they introduce deleterious instabilities above a

  16. Raman Scattering in the Magnetized Semiconductor Plasma

    NASA Astrophysics Data System (ADS)

    Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

    2005-04-01

    Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

  17. Raman Scattering in the Magnetized Semiconductor Plasma

    NASA Astrophysics Data System (ADS)

    Jankauskas, Zigmantas; Kvedaras, Vygaudas; Balevičius, Saulius

    Radio frequency (RF) magnetoplasmic waves known as helicons will propagate in solid-state plasmas when a strong magnetic field is applied. In our device the helicons were excited by RFs (the range 100-2000 MHz) much higher than the helicon generation frequency (the main peak at 20 MHz). The excitation of helicons in this case may be described by the effect similar to the Combination Scattering (Raman effect) when a part of the high RF wave energy that passes through the active material is absorbed and re-emitted by the magnetized solid-state plasma. It is expedient to call this experimental device a Helicon Maser (HRM) and the higher frequency e/m field - a pumping field. In full analogy with the usual Raman maser (or laser) the magnetized semiconductor sample plays the role of active material and the connecting cable - the role of high quality external resonator.

  18. Growth and Properties of the Dilute Bismide Semiconductor GaAs1-xBix a Complementary Alloy to the Dilute Nitrides

    SciTech Connect

    Tiedje, T.; Young, E. C.; Mascarenhas, A.

    2008-01-01

    In this review we describe the growth and properties of the dilute bismide semiconductor alloy GaAs{sub 1-x}Bi{sub x} and show how its properties are in certain respects complementary to the dilute nitride alloy, GaN{sub y}As{sub 1-y}. Like the dilute nitrides the dilute bismides show a giant band gap bowing effect in which a small concentration of the alloying element has a disproportionate effect on the band gap, however in the case of the bismide the band gap reduction is associated with an increase in the energy of the valence band maximum (VBM) rather than a reduction in the energy of the conduction band minimum (CBM). Under standard GaAs growth conditions Bi acts as a surfactant with associated improvements in surface quality. In order to incorporate Bi, growth temperatures below 400 C are used with As{sub 2}/Ga flux ratios close to unity. The electron mobility of GaAs is only weakly affected by Bi alloying, in contrast to the dilute nitrides where the electron mobility decreases rapidly with N alloying. Bi alloying also produces a giant bowing effect in the spin orbit splitting in the valence band. Strong room temperature photoluminescence is observed. Prospects for future device applications of this new compound semiconductor alloy are discussed.

  19. Tunable exchange bias in dilute magnetic alloys - chiral spin glasses

    NASA Astrophysics Data System (ADS)

    Hudl, Matthias; Mathieu, Roland; Nordblad, Per

    2016-01-01

    A unidirectional anisotropy appears in field cooled samples of dilute magnetic alloys at temperatures well below the cusp temperature of the zero field cooled magnetization curve. Magnetization measurements on a Cu(13.5 at% Mn) sample show that this anisotropy is essentially temperature independent and acts on a temperature dependent excess magnetization, ΔM. The anisotropy can be partially or fully transferred from being locked to the direction of the cooling field at lower fields to becoming locked to the direction of ΔM at larger fields, thus instead appearing as a uniaxial anisotropy. This introduces a deceiving division of the anisotropy into a superposition of a unidirectional and a uniaxial part. This two faced nature of the anisotropy has been empirically scrutinized and concluded to originate from one and the same exchange mechanism: the Dzyaloshinsky-Moriya interaction.

  20. Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Wang, M.; Marshall, R. A.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Gallagher, B. L.

    2016-05-01

    We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of properties inhibits domain formation, thus removing a principal experimental difficulty in determining the critical coefficients β and γ . We find that there are still a large number of problems to overcome in terms of measurement procedures and methods of analysis. In particular, the combined effects of disorder and inhomogeneity limit the accessible critical region. However, we find that accurate and reproducible values of the critical exponents β and γ can be obtained from Kouvel-Fisher plots of remanent magnetization and magnetic susceptibility for our (Ga,Mn)As samples. The values of β and γ obtained are consistent with those of the three-dimensional Heisenberg class, despite the very strong disorder present in this system, and they are inconsistent with mean field behavior. Log-log plots of M (H ) data for our samples are consistent with the three-dimensional Heisenberg value of the critical exponent δ , but accurate values of δ could not be obtained for our samples from these plots. We also find that accurate values of the critical exponent α could not be obtained by fitting to the measured temperature derivative of resistivity for our samples. We find that modified Arrott plots and scaling plots are not a practical way to determine the universality class or critical exponents, though they are found to be in better agreement with three-dimensional Heisenberg values than mean field values. Below the critical temperature range, we find that the magnetization shows power-law behavior down to a reduced temperature of t ˜0.5 , with a critical exponent β ˜0.4 , a value appreciably lower than the mean field value of β =0.5 . At lower temperatures, Bloch 3/2 law behavior is observed due to magnons.

  1. Angular dependent study on spin transport in magnetic semiconductor heterostructures with Dresselhaus spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Mirzanian, S. M.; Shokri, A. A.; Mikaili Agah, K.; Elahi, S. M.

    2015-09-01

    We investigate theoretically the effects of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise through II-VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.

  2. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    NASA Astrophysics Data System (ADS)

    Banerjee, Ananya; Sarkar, A.

    2016-05-01

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  3. Investigation of III-V magnetic semiconductor thin films and heterojunction devices

    NASA Astrophysics Data System (ADS)

    Rangaraju, Nikhil

    Magnetic field control of semiconductor device properties is of great interest for novel electronics because it offers a way to control the spin degree of freedom of charge carriers. One way to achieve this control is the use of dilute magnetic semiconductor as an active element in semiconductor devices. In this work, the relationship between the magnetic and electronic properties of magnetic bipolar heterojunction devices is examined. InMnAs/n-type heterojunctions were fabricated using metalorganic vapor phase epitaxy. The capacitace of these devices was measured at room temperature as a function of magnetic field. The capacitance of these junction increases with magnetic field by up to 1.25% at 0.5 T. The change in capacitance suggests that there is spin splitting in the material. The magnetotransport properties of InMnAs/InAs heterojunction diode were measured as a function of magnetic field from 0 to 18 T and at various temperatures. These devices exhibit excellent rectifying properties at room temperature and zero magnetic field. When a magnetic field is applied, the junctions show resistive behavior, which dominates at high magnetic fields. The magnetoresistance of these diodes was measured as a function of current. The magnetoresistance for 15 mA through the device is 2600% at 18 T. The magnetoresistance of this device is attributed to efficient spin-polarized carrier transport. The conductance behavior of InMnAs diodes in high magnetic fields is analyzed to explain the spin selective transport. The change in current through the device at a constant voltage increases linearly with magnetic field for low magnetic fields and saturates at high magnetic field. The measured field dependence of the current change is attributed to the existence of a paramagnetic component, which determines the degree of spin polarization of the junction current. This work indicates that highly spin-polarized magnetic semiconductor heterojunction devices that operate at room

  4. Multifractality in dilute magnetorheological fluids under an oscillating magnetic field.

    PubMed

    Moctezuma, R E; Arauz-Lara, J L; Donado, F

    2014-12-01

    A study of the multifractal characteristics of the structure formed by magnetic particles in a dilute magnetorheological fluid is presented. A quasi-two-dimensional magnetorheological fluid sample is simultaneously subjected to a static magnetic field and a sinusoidal magnetic field transverse to each other. We analyzed the singularity spectrum f(α) and the generalized dimension D(q) of the whole structure to characterize the distribution of the aggregates under several conditions of particle concentration, magnetic field intensities, and liquid viscosity. We also obtained the fractal dimension D(g), calculated from the radius of gyration of the chains, to describe the internal distribution of the particles. We present a thermodynamic interpretation of the multifractal analysis, and based on this, we discussed the characteristics of the structure formed by the particles and its relation with previous studies of the average chain length. We have found that this method is useful to quantitatively describe the structure of magnetorheological fluids, especially in systems with high particle concentration where the aggregates are more complex than simple chains or columns. PMID:25615089

  5. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  6. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  7. Spin-spin relaxation in magnetically dilute crystals

    NASA Astrophysics Data System (ADS)

    Dzheparov, F. S.; Lvov, D. V.; Veretennikov, M. A.

    2015-01-01

    Magnetic resonance is examined in paramagnetic systems with a small concentration of spins. The free induction signal (FIS) and resonance line shape function (LSF) are calculated. The theory is based on the introduction of an auxiliary system where one spin does not have a flip-flop interaction with the surroundings. The FIS is calculated for this spin using the Anderson-Weiss-Kubo theory and its memory function is used to construct the memory of the main system. The needed numerical coefficients are obtained from expansions of the FIS in terms of the concentration. Here the polarization transport in magnetically dilute systems is taken into account for the first time. This is shown to lead to significant slowing down of the decay in the FIS for times longer than the phase relaxation time. Existing experimental data are compared with theoretical models. Satisfactory agreement is obtained for the description of the central part of the LSF after an additional experimentally observed broadening is introduced in the theory. Data on the amplitude and position of the sideband peaks from the different experiments are not in good agreement with one another or with the theory.

  8. Magnetic birefringence studies of dilute purple membrane suspensions.

    PubMed Central

    Lewis, B A; Rosenblatt, C; Griffin, R G; Courtemanche, J; Herzfeld, J

    1985-01-01

    We have observed the magnetically induced orientation of purple membrane suspensions by measuring the birefringence as a function of concentration and temperature at fields up to 10.5 Tesla (T). At these fields, the orientation approaches saturation even in dilute solutions; therefore, the birefringence data, together with an estimate of the membrane size distribution obtained from electron microscopy, permits one to determine the diamagnetic susceptibility anisotropy. We find delta chi mole = 1.2 +/- 0.3 X 10(-3) erg G-2mol-1 of bacteriorhodopsin. If delta chi were due only to the oriented peptide bonds of the transmembrane alpha helices, this experimental value would indicate that delta K, the anisotropy per mole of peptide bonds, is considerably larger than previously suggested. On the other hand, the large value for delta chi mole of bacteriorhodopsin can also be explained by a net orientation of the aromatic amino acid side chains of bacteriorhodopsin with their planes perpendicular to the membrane surface. In addition, the present data analysis demonstrates the critical dependence of the calculated delta chi value on the values for the membrane size distribution. PMID:3978196

  9. Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

    SciTech Connect

    Hu, R.; Thomas, K.; Lee, Y.; Vogt, T.; Choi, E.; Mitrovic, V.; Hermann, R.; Grandjean, F.; Canfield, P.; Kim, J.; Goldman, A.; Petrovic, C.

    2008-02-27

    We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb{sub 2}, a nearly magnetic or 'Kondo' semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

  10. Photo-induced Magnetism and Spintronics in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Yoo, Jung Woo

    2009-03-01

    Recent years have witnessed growing attention on manipulating spins in organic species. One of the interesting phenomena in organic-based magnets is controlling magnetic properties by optical stimulus, a property not exhibited in metallurgical magnets. Three classes of known phenomena and mechanism will be discussed: i) manipulation of number of spins by optically induced charge transfer in cyano-bimetallic complexes [1], ii) optical control of exchange coupling in Mn(TCNE)2 compound [2], iii) light-induced change of magnetic anisotropy in the magnetic semiconductor V(TCNE)x [3]. The second part of this talk will be devoted to ongoing research on transferring spin polarized carriers through organic semiconductors. Recently, there have been lively activities as well as controversies on the application of organic semiconductors for transporting spin information. However, the understanding of spin injection and transport in organic semiconductors is still limited. We will address detailed mechanisms for spin injection and transport in organic semiconductor film of our rubrene (C42H28)-based spin valve and potential applications of organic-based spintronics. [4pt] [1] O. Sato, T. Iyoda, A. Fujishima, and K. Hashimoto, Science 272, 704 (1996).[0pt] [2] D. A. Pejakovic', C. Kitamura, J. S. Miller, and A. J. Epstein, Phys. Rev. Lett. 88, 057202 (2002).[0pt] [3] J. W. Yoo et al., Phys. Rev. Lett. 97, 247205 (2006); 99, 157205 (2007).

  11. Spin injection into semiconductors

    NASA Astrophysics Data System (ADS)

    Oestreich, M.; Hübner, J.; Hägele, D.; Klar, P. J.; Heimbrodt, W.; Rühle, W. W.; Ashenford, D. E.; Lunn, B.

    1999-03-01

    The injection of spin-polarized electrons is presently one of the major challenges in semiconductor spin electronics. We propose and demonstrate a most efficient spin injection using diluted magnetic semiconductors as spin aligners. Time-resolved photoluminescence with a Cd0.98Mn0.02Te/CdTe structure proves the feasibility of the spin-alignment mechanism.

  12. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    SciTech Connect

    Cotoros, Ingrid A.

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  13. Optical absorption in semiconductor nanorings under electric and magnetic fields

    NASA Astrophysics Data System (ADS)

    Zhang, Tong-Yi; Cao, Jun-Cheng; Zhao, Wei

    2005-01-01

    The optical absorption in semiconductor nanorings under a lateral DC field and a perpendicular magnetic field is numerically simulated by coherent wave approach. The exciton dominated optical absorption is compared with the free-carrier interband absorption to demonstrate the key role of Coulomb interaction between electron and hole. The influence of the lateral DC field and the perpendicular magnetic field on the optical absorption are discussed in detail. It shows that the lateral DC field can significantly enhance the Aharonov-Bohm effect of the neutral excitons in semiconductor nanorings.

  14. Magnetoresistance near the ferromagnetic-paramagnetic phase transition in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Brodowska, B.; Kuryliszyn-Kudelska, I.; Wojtowicz, T.; Arciszewska, M.; Dobrowolski, W.; Slynko, E. I.; Slynko, V. E.; Liu, X.; Furdyna, J. K.

    2008-07-01

    Magnetic and transport properties of ferromagnetic semiconductors (FMSs) near the ferromagnetic-paramagnetic phase transition were studied in two classes of FMSs: in the III-V-based In1-xMnxSb and Ga1-xMnxAs epitaxial films and in IV-VI-based Sn1-xMnxTe and Sn1-x-yMnxEryTe alloys in bulk crystal form. Magnetoresistance data for both FMS classes are in excellent agreement with the theory of Majumdar and Littlewood, indicating that near the Curie temperature, magnetic fluctuations play a key role as scattering centers. These results also show that the Majumdar-Littlewood model can be applied to magnetically very dilute systems.

  15. Pulsed laser ablation of preferentially orientated ZnO:Co diluted magnetic semiconducting thin films on Si substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Y. B.; Liu, Q.; Sritharan, T.; Gan, C. L.; Li, S.

    2006-07-01

    ZnO:Co thin films with room-temperature ferromagnetism have been synthesized on (001) Si substrates by pulsed laser deposition using a Zn0.95Co0.05O ceramic target. Single-phase wurtzite thin films with (002) preferential orientation were grown at 450°C in vacuum. There is no indication of Co nanocluster formation. However, copious edge dislocations appear to have formed during the film growth. A saturation magnetization of 1.04μB/Co and a coercivity of 25Oe were obtained at room temperature. In addition to O vacancies, the Zn interstitial induced by edge dislocations may also contribute to the ferromagnetic properties in this oxide-diluted magnetic semiconductor.

  16. Ba(Zn1-2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

    NASA Astrophysics Data System (ADS)

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F. L.

    2015-10-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1-2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn1-2xMnxCux)2As2, enabling its possible application in memory devices.

  17. Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

    PubMed Central

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F.L.

    2015-01-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1−2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as −53% negative magnetoresistance has been observed in Ba(Zn1−2xMnxCux)2As2, enabling its possible application in memory devices. PMID:26492957

  18. Magnetic Damping of Solid Solution Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Szofran, Frank R.; Benz, K. W.; Croell, Arne; Dold, Peter; Cobb, Sharon D.; Volz, Martin P.; Motakef, Shariar

    1999-01-01

    The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

  19. Spin transport in strained non-magnetic zinc blende semiconductors

    NASA Astrophysics Data System (ADS)

    Moehlmann, Benjamin James

    The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We begin with a review of the literature on spin dynamics in semiconductors, then discuss the semi-empirical k·p method of calculating direct-gap semiconductor properties, which we use to estimate material parameters significant for manipulation of spin even in the absence of a magnetic field. The total effective magnetic fields and precession lengths are calculated for a variety of quantum well orientations, and a class of devices are proposed that will allow for all-electric arbitrary manipulation of spin orientations. The strain- and momentum-dependent spin splitting coefficient C3 has been calculated using a fourteen band Kane k·p model for a variety of III-V semiconductors as well as ZnSe and CdSe. It is observed that the spin-splitting parameters C 3 and gamma, corresponding to the strain-induced spin-orbit interaction and Dresselhaus coefficient, are sensitive to the value of the inter-band spin-orbit coupling Delta- between the p valence and p second conduction band in all cases. The value of Delta- has therefore been recalculated in these materials using a tight-binding model and modern experimental values of the valence and second conduction band spin-orbit splittings. The total effective magnetic field and precession length of spins in strained quantum wells in the (001), (110), and (111) planes are derived with consideration for all known effective magnetic fields except those due to interface effects in non- common-atom heterostructures (native inversion asymmetry). The orientation of the k-linear Dresselhaus field and the strain-dependent fields vary strongly with the growth axis of the quantum well. The precession length in the (110) and (001) cases can achieve infinite anisotropy, while the precession length of (111) quantum wells is always isotropic. We find that the electronic spin rotation

  20. (Ca,Na)(Zn,Mn){sub 2}As{sub 2}: A new spin and charge doping decoupled diluted ferromagnetic semiconductor

    SciTech Connect

    Zhao, K.; Chen, B. J.; Deng, Z.; Zhao, G. Q.; Zhu, J. L.; Liu, Q. Q.; Wang, X. C.; Han, W.; Frandsen, B.; Liu, L.; Cheung, S.; Uemura, Y. J.; Ning, F. L.; Munsie, T. J. S.; Medina, T.; Luke, G. M.; Carlo, J. P.; Munevar, J.; Zhang, G. M.; Jin, C. Q.

    2014-10-28

    Here, we report the successful synthesis of a spin- and charge-decoupled diluted magnetic semiconductor (DMS) (Ca,Na)(Zn,Mn){sub 2}As{sub 2}, crystallizing into the hexagonal CaAl{sub 2}Si{sub 2} structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of n{sub p} ∼ 10{sup 20 }cm{sup −3}. The new DMS is a soft magnetic material with H{sub C} < 400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.

  1. Wide-Gap Magnetic Semiconductors and Their Nanostructures

    NASA Astrophysics Data System (ADS)

    Furdyna, Jacek K.

    2000-03-01

    Although the field of wide-gap magnetic semiconductors (particularly those involving II-VI semiconductor alloys with Mn) has been active for two decades, a number of new advances have recently emerged, that illustrate the effect of spin-based effects on the electrtonic properties of wide-gap systems generally. We will discuss four of these advances. First, it has recently been shown in ZnSe/CdSe quantum dot (QD) systems containing Mn (either in the quantum dot interior, or in the surrounding matrix) that the photoluminescence intensity emitted by the dots can be amplified (by orders of magnitude) by applying an external magnetic field. This effect can be understood by the very efficient coupling of the QD excitonic emission with the well-known spin-flip transitions taking place within the Mn ions. As an interesting byproduct, it has been demonstrated that Mn act in this system as a nucleating agent for the QDs, resulting in dots that are more uniform and more homogeneous. Second, neutron diffraction experiments on wide-gap ZnTe/MnTe superlattices have shown that the magnetic coupling between the magnetic layers can be contolled by the introduction of deep levels via doping, again pointing to the connection of spin and electronic subsystems. Understanding inter-layer coupling betweem spin-polarized layers is of key importance for "spintronic" applications, and superlattices such as those just mentioned thus constitute a convenient laboratory for investigating these interactions. Third -- again in the context of "spintronics" -- we shall present the various schemes which are used to achieve ferromagnetic order in wide-gap II-VI magnetic semiconductors, and will compare these advances to the concurrent emergence of ferromagnetism in III-V semiconductors alloyed with Mn. And finally, we will discuss magnetic band-edge tuning in magnetic semiconductors as a tool for measuring band offsets, and -- by using ZnSe/ZnBeMnSe heterostructures -- will apply this method to

  2. Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering

    NASA Astrophysics Data System (ADS)

    Felici, Marco; Birindelli, Simone; Trotta, Rinaldo; Francardi, Marco; Gerardino, Annamaria; Notargiacomo, Andrea; Rubini, Silvia; Martelli, Faustino; Capizzi, Mario; Polimeni, Antonio

    2014-12-01

    In dilute-nitride semiconductors, the possibility to selectively passivate N atoms by spatially controlled hydrogen irradiation allows for tailoring the effective N concentration of the host—and, therefore, its electronic and structural properties—with a precision of a few nanometers. In the present work, this technique is applied to the realization of ordered arrays of GaAs1 -xNx/GaAs1 -xNx∶H wires oriented at different angles with respect to the crystallographic axes of the material. The creation of a strongly anisotropic strain field in the plane of the sample, due to the lattice expansion of the fully hydrogenated regions surrounding the GaAs1 -xNx wires, is directly responsible for the peculiar polarization properties observed for the wire emission. Temperature-dependent polarization-resolved microphotoluminescence measurements, indeed, reveal a nontrivial dependence of the degree of linear polarization on the wire orientation, with maxima for wires parallel to the [110] and [1 1 ¯ 0 ] directions and a pronounced minimum for wires oriented along the [100] axis. In addition, the polarization direction is found to be precisely perpendicular to the wire when the latter is oriented along high-symmetry crystal directions, whereas significant deviations from a perfect orthogonality are measured for all other wire orientations. These findings, which are well reproduced by a theoretical model based on finite-element calculations of the strain profile of our GaAs1 -xNx/GaAs1 -xNx∶H heterostructures, demonstrate our ability to control the polarization properties of dilute-nitride micro- and nanostructures via H-assisted strain engineering. This additional degree of freedom may prove very useful in the design and optimization of innovative photonic structures relying on the integration of dilute-nitride-based light emitters with photonic crystal microcavities.

  3. Magnetic effect on hopping rate of electrons in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Zhao, Junqing; Wang, Ting; Zhang, Meisheng; Zhang, Ningyu; Pang, Yantao; Li, Luyan; Ji, Yanju; Zhuang, Shidong; Mao, Jinhua; Wang, Huilin

    2013-10-01

    Considering effects of molecular vibration (ω0), hyperfine interaction (J), spin energy split, spin flip, and spin entanglement (η) of electron with nucleus on the hopping rate of electrons in organic semiconductors, we establish a model to calculate organic magnetoresistance (OMAR) within magnetic field B of 1 T. The results show that the effect of spin energy split is minimal, ω0 influences the gradient of OMAR to B in high field, J influences the OMAR in low field, the spin flip shows impact mainly in low field, η affects OMAR throughout the considered magnetic field and turns the high-field OMAR from positive to negative value.

  4. Simulation of the magnetization dynamics of diluted ferrofluids in medical applications.

    PubMed

    Rogge, Henrik; Erbe, Marlitt; Buzug, Thorsten M; Lüdtke-Buzug, Kerstin

    2013-12-01

    Ferrofluids, which are stable, colloidal suspensions of single-domain magnetic nanoparticles, have a large impact on medical technologies like magnetic particle imaging (MPI), magnetic resonance imaging (MRI) and hyperthermia. Here, computer simulations promise to improve our understanding of the versatile magnetization dynamics of diluted ferrofluids. A detailed algorithmic introduction into the simulation of diluted ferrofluids will be presented. The algorithm is based on Langevin equations and resolves the internal and the external rotation of the magnetic moment of the nanoparticles, i.e., the Néel and Brown diffusion. The derived set of stochastic differential equations are solved by a combination of an Euler and a Heun integrator and tested with respect to Boltzmann statistics. PMID:24163220

  5. Magnetic instability in a dilute circular rarefaction wave

    SciTech Connect

    Dieckmann, M. E.; Sarri, G.; Borghesi, M.

    2012-12-15

    The growth of magnetic fields in the density gradient of a rarefaction wave has been observed in simulations and in laboratory experiments. The thermal anisotropy of the electrons, which gives rise to the magnetic instability, is maintained by the ambipolar electric field. This simple mechanism could be important for the magnetic field amplification in astrophysical jets or in the interstellar medium ahead of supernova remnant shocks. The acceleration of protons and the generation of a magnetic field by the rarefaction wave, which is fed by an expanding circular plasma cloud, is examined here in form of a 2D particle-in-cell simulation. The core of the plasma cloud is modeled by immobile charges, and the mobile protons form a small ring close to the cloud's surface. The number density of mobile protons is thus less than that of the electrons. The protons of the rarefaction wave are accelerated to 1/10 of the electron thermal speed, and the acceleration results in a thermal anisotropy of the electron distribution in the entire plasma cloud. The instability in the rarefaction wave is outrun by a TM wave, which grows in the dense core distribution, and its magnetic field expands into the rarefaction wave. This expansion drives a secondary TE wave.

  6. Analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma

    SciTech Connect

    Shukla, Arun; Jat, K. L.

    2015-07-31

    An analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma has been reported. In the present analytical investigation, the lattice displacement, acousto-optical polarization, susceptibility, acousto-optical gain constant arising due to the induced nonlinear current density and acousto-optical process are deduced in an acoustically perturbed Brillouin active magnetized semiconductor plasma using the hydrodynamical model of plasma and coupled mode scheme. The influence of wave number and magnetic field has been explored. The analysis has been applied to centrosymmetric crystal. Numerical estimates are made for n-type InSb crystal duly irradiated by a frequency doubled 10.6 µm CO{sub 2} laser. It is found that lattice displacement, susceptibility and acousto-optical gain increase linearly with incident wave number and applied dc magnetic field, while decrease with scattering angle. The gain also increases with electric amplitude of incident laser beam. Results are found to be well in agreement with available literature.

  7. Static Magnetic Fields in Semiconductor Floating-Zone Growth

    NASA Technical Reports Server (NTRS)

    Croll, Arne; Benz, K. W.

    1999-01-01

    Heat and mass transfer in semiconductor float-zone processing are strongly influenced by convective flows in the zone, originating from sources such as buoyancy convection, thermocapillary (Marangoni) convection, differential rotation, or radio frequency heating. Because semiconductor melts are conducting, flows can be damped by the use of static magnetic fields to influence the interface shape and the segregation of dopants and impurities. An important objective is often the suppression of time-dependent flows and the ensuing dopant striations. In RF-heated Si-FZ - crystals, fields up to O.STesla show some flattening of the interface curvature and a reduction of striation amplitudes. In radiation-heated (small-scale) SI-FZ crystals, fields of 0.2 - 0.5 Tesla already suppress the majority of the dopant striations. The uniformity of the radial segregation is often compromised by using a magnetic field, due to the directional nature of the damping. Transverse fields lead to an asymmetric interface shape and thus require crystal rotation (resulting in rotational dopant striations) to achieve a radially symmetric interface, whereas axial fields introduce a coring effect. A complete suppression of dopant striations and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile towards a more diffusion-limited case, are possible with axial static fields in excess of 1 Tesla. Strong static magnetic fields, however, can also lead to the appearance of thermoelectromagnetic convection, caused by the interaction of thermoelectric currents with the magnetic field.

  8. The synthesis and characterization of 1 1 1 1 type diluted ferromagnetic semiconductor (La(1-x)Ca(x))(Zn(1-x) Mn(x))AsO.

    PubMed

    Ding, Cui; Guo, Shengli; Zhao, Yao; Man, Huiyuan; Fu, Licheng; Gu, Yilun; Wang, Zhouyang; Liu, L; Frandsen, B A; Cheung, S; Uemura, Y J; Goko, T; Luetkens, H; Morenzoni, E; Zhao, Yang; Ning, F L

    2016-01-20

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor, (La(1-x)Ca(x))(Zn(1-y) Mn(y))AsO, with a layered crystal structure isostructural to that of the 1 1 1 1 type Fe-based high-temperature superconductor LaFeAsO and the antiferromagnetic LaMnAsO. With Ca and Mn codoping into LaZnAsO, the ferromagnetic ordering occurs below the Curie temperature T(c) ∼30 K. Taking advantage of the decoupled charge and spin doping, we investigate the influence of carrier concentration on the ferromagnetic ordering state. For a fixed Mn concentration of 10%, T(c) increases from 24 K to 30 K when the Ca concentration increases from 5% to 10%. Further increase of Ca concentration reduces both the coercive field and saturation moment. Muon spin relaxation measurements confirm the ferromagnetically ordered state, and clearly demonstrate that La(1-x)Ca(x))(Zn(1-y) Mn(y))AsO shares a common mechanism for the ferromagnetic exchange interaction with (Ga,Mn)As. Neutron scattering measurements show no structural transition in (La(0.90)Ca(0.10))(Zn(0.90)Mn(0.10)) AsO below 300 K. PMID:26679223

  9. The synthesis and characterization of 1 1 1 1 type diluted ferromagnetic semiconductor (La1-x Ca x )(Zn1-x Mn x )AsO

    NASA Astrophysics Data System (ADS)

    Ding, Cui; Guo, Shengli; Zhao, Yao; Man, Huiyuan; Fu, Licheng; Gu, Yilun; Wang, Zhouyang; Liu, L.; Frandsen, B. A.; Cheung, S.; Uemura, Y. J.; Goko, T.; Luetkens, H.; Morenzoni, E.; Zhao, Yang; Ning, F. L.

    2016-01-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor, (La1-x Ca x )(Zn1-y Mn y )AsO, with a layered crystal structure isostructural to that of the 1 1 1 1 type Fe-based high-temperature superconductor LaFeAsO and the antiferromagnetic LaMnAsO. With Ca and Mn codoping into LaZnAsO, the ferromagnetic ordering occurs below the Curie temperature {{T}\\text{C}}   ˜30 K. Taking advantage of the decoupled charge and spin doping, we investigate the influence of carrier concentration on the ferromagnetic ordering state. For a fixed Mn concentration of 10%, {{T}\\text{C}} increases from 24 K to 30 K when the Ca concentration increases from 5% to 10%. Further increase of Ca concentration reduces both the coercive field and saturation moment. Muon spin relaxation measurements confirm the ferromagnetically ordered state, and clearly demonstrate that (La1-x Ca x )(Zn1-y Mn y )AsO shares a common mechanism for the ferromagnetic exchange interaction with (Ga,Mn)As. Neutron scattering measurements show no structural transition in (La0.90Ca0.10)(Zn0.90Mn0.10)AsO below 300 K.

  10. Peltier heat of a small polaron in a magnetic semiconductor

    SciTech Connect

    Liu, N.H.; Emin, D.

    1985-04-15

    For the first time the heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, ..pi.., is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to ..pi... Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to ..pi... At extremely high temperatures when kT exceeds the intrasite exchange energy, the first effect dominates. Then ..pi.. is simply augmented by kT ln 2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat.

  11. Peltier heat of a small polaron in a magnetic semiconductor

    SciTech Connect

    Liu, N.L.H.; Emin, D.

    1984-01-01

    The heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, ..pi.., is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to ..pi... Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to ..pi... At extremely high temperature when kT exceeds the intrasite exchange energy, the first effect dominates. Then ..pi.. is simply augmented by kTln2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat.

  12. Correlation of nanoscale structure with electronic and magnetic properties in semiconductor materials

    NASA Astrophysics Data System (ADS)

    He, Li

    The goal of this research is to correlate individual nanostructures with their electronic and magnetic properties. Three classes of semiconductor materials and nanostructures were investigated: nanowires, dilute magnetic semiconductors, and quantum dots. First, we fabricated electrical contact to free-standing nanowires using focused ion beam (FIB)-induced deposition and achieved ohmic contact between GaP nanowires and FIB-deposited Pt. Ion irradiation was found to change the nanowire resistance, presumably through the generation of electrical active defects. Based on the finding that ion beam induces deposition outside the direct impact area, a new fabrication method for nanowire core-shell structures was developed by creating an annular direct deposition pattern around the nanowire. We also developed a new nanowire transmission electron microscopy (TEM) sample preparation method that enabled the free-standing nanowires to be individually studied in the TEM. Distribution of Pt and Si elements in the deposited layers was confirmed by x-ray energy dispersive spectroscopy and electron energy filtered imaging (elemental mapping). The indirect deposition mechanism is attributed to the interaction of secondary electrons generated from the primary ion impact area with the deposition precursor absorbed at the nanowire surface. The calculated secondary electron flux distribution matched well with the variation of deposition thickness along the nanowire length and with the pattern radius. The second part of this work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties in Ge:Mn magnetic semiconductor materials. Implantation at 75°C with dual Mn doses (2.4x10 15/cm2 at 170 keV, followed by 5.6x10 15/cm2 at 60 keV) produced an amorphous Ge film containing Mn-rich clusters. Its magnetic properties indicated dispersion of ferromagnetic regions in a non-magnetic matrix

  13. Dynamics of Coulomb correlations in semiconductors in high magnetic fields

    SciTech Connect

    Fromer, Neil Alan

    2002-05-01

    Current theories have been successful in explaining many nonlinear optical experiments in undoped semiconductors. However, these theories require a ground state which is assumed to be uncorrelated. Strongly correlated systems of current interest, such as a two dimensional electron gas in a high magnetic field, cannot be explained in this manner because the correlations in the ground state and the low energy collective excitations cause a breakdown of the conventional techniques. We perform ultrafast time-resolved four-wave mixing on $n$-modulation doped quantum wells, which contain a quasi-two dimensional electron gas, in a large magnetic field, when only a single Landau level is excited and also when two levels are excited together. We find evidence for memory effects and as strong coupling between the Landau levels induced by the electron gas. We compare our results with simulations based on a new microscopic approach capable of treating the collective effects and correlations of the doped electrons, and find a good qualitative agreement. By looking at the individual contributions to the model, we determine that the unusual correlation effects seen in the experiments are caused by the scattering of photo-excited electron-hole pairs with the electron gas, leading to new excited states which are not present in undoped semiconductors, and also by exciton-exciton interactions mediated by the long-lived collective excitations of the electron gas, inter-Landau level magnetoplasmons.

  14. Magnetic Field Suppression of Flow in Semiconductor Melt

    NASA Technical Reports Server (NTRS)

    Fedoseyev, A. I.; Kansa, E. J.; Marin, C.; Volz, M. P.; Ostrogorsky, A. G.

    2000-01-01

    One of the most promising approaches for the reduction of convection during the crystal growth of conductive melts (semiconductor crystals) is the application of magnetic fields. Current technology allows the experimentation with very intense static fields (up to 80 KGauss) for which nearly convection free results are expected from simple scaling analysis in stabilized systems (vertical Bridgman method with axial magnetic field). However, controversial experimental results were obtained. The computational methods are, therefore, a fundamental tool in the understanding of the phenomena accounting during the solidification of semiconductor materials. Moreover, effects like the bending of the isomagnetic lines, different aspect ratios and misalignments between the direction of the gravity and magnetic field vectors can not be analyzed with analytical methods. The earliest numerical results showed controversial conclusions and are not able to explain the experimental results. Although the generated flows are extremely low, the computational task is a complicated because of the thin boundary layers. That is one of the reasons for the discrepancy in the results that numerical studies reported. Modeling of these magnetically damped crystal growth experiments requires advanced numerical methods. We used, for comparison, three different approaches to obtain the solution of the problem of thermal convection flows: (1) Spectral method in spectral superelement implementation, (2) Finite element method with regularization for boundary layers, (3) Multiquadric method, a novel method with global radial basis functions, that is proven to have exponential convergence. The results obtained by these three methods are presented for a wide region of Rayleigh and Hartman numbers. Comparison and discussion of accuracy, efficiency, reliability and agreement with experimental results will be presented as well.

  15. Polydispersity effects on the magnetization of diluted ferrofluids: a lognormal analysis

    NASA Astrophysics Data System (ADS)

    Wang, Xu-Fei; Shi, Li-Qun

    2010-10-01

    Based on a lognormal particle size distribution, this paper makes a model analysis on the polydispersity effects on the magnetization behaviour of diluted ferrofluids. Using a modified Langevin relationship for the lognormal dispersion, it first performs reduced calculations without material parameters. From the results, it is extrapolated that for the ferrofluid of lognormal polydispersion, in comparison with the corresponding monodispersion, the saturation magnetization is enhanced higher by the particle size distribution. It also indicates that in an equivalent magnetic field, the lognormally polydispersed ferrofluid is magnetically saturated faster than the corresponding monodispersion. Along the theoretical extrapolations, the polydispersity effects are evaluated for a typical ferrofluid of magnetite, with a dispersity of σ = 0.20. The results indicate that the lognormal polydispersity leads to a slight increase of the saturation magnetization, but a noticeable increase of the speed to reach the saturation value in an equivalent magnetic field.

  16. Random site dilution properties of frustrated magnets on a hierarchical lattice.

    PubMed

    Fortin, Jean-Yves

    2013-07-24

    We present a method to analyze the magnetic properties of frustrated Ising spin models on specific hierarchical lattices with random dilution. Disorder is induced by dilution and geometrical frustration rather than randomness in the internal couplings of the original Hamiltonian. The two-dimensional model presented here possesses a macroscopic entropy at zero temperature in the large size limit, very close to the Pauling estimate for spin-ice on the pyrochlore lattice, and a crossover towards a paramagnetic phase. The disorder due to dilution is taken into account by considering a replicated version of the recursion equations between partition functions at different lattice sizes. An analysis to first order in replica number allows a systematic reorganization of the disorder configurations, leading to a recurrence scheme. This method is numerically implemented to evaluate thermodynamical quantities such as specific heat and susceptibility in an external field. PMID:23807800

  17. Magnetic anisotropy control in Ga1-x Mnx As magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Stagraczyński, S.; Jasiukiewicz, C.; Dugaev, V. K.; Berakdar, J.

    2016-08-01

    Using the six-band Kane model of the electron energy spectrum in the valence band of GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic anisotropy on the magnitude of magnetization and on the doping with holes. Our main focus is on the difference between two possible models related to the constraint on the total hole number or on the chemical potential. Our results show that the theoretical results for magnetic anisotropy can change dramatically with the use of different constraints.

  18. Magnetite and magnetite/silver core/shell nanoparticles with diluted magnet-like behavior

    SciTech Connect

    Garza-Navarro, Marco; Gonzalez, Virgilio; Ortiz, Ubaldo; De la Rosa, Elder

    2010-01-15

    In the present work is reported the use of the biopolymer chitosan as template for the preparation of magnetite and magnetite/silver core/shell nanoparticles systems, following a two step procedure of magnetite nanoparticles in situ precipitation and subsequent silver ions reduction. The crystalline and morphological characteristics of both magnetite and magnetite/silver core/shell nanoparticles systems were analyzed by high resolution transmission electron microscopy (HRTEM) and nanobeam diffraction patterns (NBD). The results of these studies corroborate the core/shell morphology and the crystalline structure of the magnetite core and the silver shell. Moreover, magnetization temperature dependent, M(T), measurements show an unusual diluted magnetic behavior attributed to the dilution of the magnetic ordering in the magnetite and magnetite/silver core/shell nanoparticles systems. - Graphical abstract: Biopolymer chitosan was used as stabilization media to synthesize both magnetite and magnetite/silver core/shell nanoparticles. Results of HRTEM and NBD patterns confirm core/shell morphology of the obtained nanoparticles. It was found that the composites show diluted magnet-like behavior.

  19. Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

    NASA Astrophysics Data System (ADS)

    Lee, Y. H.; Lee, J. C.; Min, J. F.; Su, C. W.

    2011-07-01

    Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N 2, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34×10 20 and 5.27×10 13 cm -3. Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties.

  20. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  1. Magnetic moment formation at a dilute 140Ce impurity in RCo2 compounds

    NASA Astrophysics Data System (ADS)

    de Oliveira, A. L.; Chaves, C. M.; de Oliveira, N. A.; Troper, A.

    2010-05-01

    A great deal of experimental work using perturbed angular correlation has succeed in measuring hyperfine fields in Ce diluted in metallic systems, thus allowing the determination of the local impurity moment at low temperatures. Motivated by such experimental work on C140e placed on a R site of the rare earth (R =Gd,Tb,Dy,Ho,Er) in RCo2, we theoretically discuss, within a simple model, the local magnetic moments and, thereby, calculate the magnetic hyperfine fields. The results are in good agreement with the experimental data. For the sake of comparison we recall our previous results on Ta d-impurity embedded in the same hosts.

  2. Transverse gradient diffusion in a polydisperse dilute suspension of magnetic spheres during sedimentation.

    PubMed

    Cunha, F R; Couto, H L G

    2008-05-21

    In this work we investigate the pair interaction of magnetic particles in a dilute polydisperse sedimenting suspension. The suspension is composed of magnetic spherical forms of different radii and densities immersed in a Newtonian fluid, settling due to the gravity. When in close contact, the particles may exert on each other a magnetic force due to a permanent magnetization. We restrict our attention to dispersions of micromagnetic composite with negligible Brownian motion. The calculations of the relative particle trajectories are based on direct computations of the hydrodynamic interactions among rigid spheres in the regime of low particle Reynolds number. Depending on the relative importance of the interparticle forces and gravity, the collisions may result in aggregation or simply in a breaking of the particle relative trajectory time reversibility. After summing over all possible encounters, the transverse self-diffusion and down-gradient diffusion coefficients that describe the cross-flow migration of the particles are calculated. Our calculation shows first evidence and the significance of the diffusion process arising from magnetic interactions in dilute non-Brownian suspensions. PMID:21694258

  3. Tunable exchange bias in dilute magnetic alloys – chiral spin glasses

    PubMed Central

    Hudl, Matthias; Mathieu, Roland; Nordblad, Per

    2016-01-01

    A unidirectional anisotropy appears in field cooled samples of dilute magnetic alloys at temperatures well below the cusp temperature of the zero field cooled magnetization curve. Magnetization measurements on a Cu(13.5 at% Mn) sample show that this anisotropy is essentially temperature independent and acts on a temperature dependent excess magnetization, ΔM. The anisotropy can be partially or fully transferred from being locked to the direction of the cooling field at lower fields to becoming locked to the direction of ΔM at larger fields, thus instead appearing as a uniaxial anisotropy. This introduces a deceiving division of the anisotropy into a superposition of a unidirectional and a uniaxial part. This two faced nature of the anisotropy has been empirically scrutinized and concluded to originate from one and the same exchange mechanism: the Dzyaloshinsky-Moriya interaction. PMID:26817418

  4. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

    SciTech Connect

    Zhang, W. Jiang, S.; Sun, L.; Wang, Y. K.; Zhai, Y.; Wong, P. K. J.; Wang, K.; Jong, M. P. de; Wiel, W. G. van der; Laan, G. van der

    2014-05-07

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

  5. Dispersion regions overlapping for bulk and surface polaritons in a magnetic-semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Fesenko, Volodymyr I.; Fedorin, Illia V.; Tuz, Vladimir R.

    2016-05-01

    Extraordinary dispersion features of both bulk and surface polaritons in a finely-stratified magnetic-semiconductor structure which is under an action of an external static magnetic field in the Voigt geometry are discussed in this letter. It is shown that the conditions for total overlapping dispersion regions of simultaneous existence of bulk and surface polaritons can be reached providing a conscious choice of the constitutive parameters and material fractions for both magnetic and semiconductor subsystems.

  6. Magnetoviscosity of dilute suspensions of magnetic ellipsoids obtained through rotational Brownian dynamics simulations.

    PubMed

    Sánchez, J H; Rinaldi, C

    2009-03-15

    The magnetic field dependent viscosity (magnetoviscosity) of dilute suspensions of magnetic tri-axial ellipsoidal particles suspended in a Newtonian fluid and under applied shear and magnetic fields was studied numerically. Brownian dynamics simulations were performed to compute the intrinsic magnetoviscosity of the suspension. Results are presented for the response of dilute suspensions of ellipsoidal particles to constant magnetic and shear flow fields. Suspensions of ellipsoidal particles show a significant effect of aspect ratio on the intrinsic magnetoviscosity of the suspension, and this effect is more pronounced as the aspect ratio becomes more extreme. The use of an effective rotational diffusion coefficient D(r,eff) collapses the normalized intrinsic magnetoviscosity of all suspensions to a master curve as a function of Péclet number with the Langevin parameter alpha=(mu(0)muH)/(k(B)T) as parameter, up to a critical value of alpha for which the results for suspensions of spherical particles deviate from those of suspensions of ellipsoids. This discrepancy is attributed to the action of the shear-torque on the ellipsoidal particles, which tends to orient these particles in the direction of maximum deformation of the simple shear flow, and which does not act on spherical particles. PMID:19100560

  7. Spin-polarized semiconductor induced by magnetic impurities in graphene

    NASA Astrophysics Data System (ADS)

    Daghofer, Maria

    2011-03-01

    Magnetic impurities adsorbed on graphene sheets are coupled antiferromangetically via the itinerant electrons in the graphene. We study this interaction and its impact on the electrons' spectral density by use of unbiased Monte-Carlo simulations. The antiferromagnetic order breaks the symmetry between the sublattices, and a gap for the itinerant electrons opens. Our simulations show that the itinerant states below and above the gap are not dispersionless states trapped by the impurities, but are instead mobile states with a large dispersion. We compare various scenarios for the impurity distribution and find that random doping produces a standard semiconductor. If, on the other hand, all or most of the impurities are localized in the same sublattice, the spin degeneracy is lifted and the conduction band becomes spin-polarized. We also discuss the properties of edge states at edges or magnetic domain boundaries. M.~Daghofer, N.~Zheng, A.~Moreo; Phys.~Rev.~B 82, 121405(R) (2010) Supported by the DFG under the Emmy-Noether Program, and the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. DOE.

  8. Spin-density-wave magnetism in dilute copper-manganese alloys

    SciTech Connect

    Lamelas, F.J.; Werner, S.A.; Shapiro, S.M.; Mydosh, J.A.

    1995-02-01

    Elastic neutron-scattering measurements on two samples of Cu alloyed with 1.3% Mn and 0.55% Mn show that the spin-density-wave (SDW) features found in more concentrated alloys persist in the limit of very dilute alloys. These features consist of temperature-dependent incommensurate peaks in magnetic neutron scattering, with positions and strengths which are fully consistent with those in the concentrated alloys. The implications of these measurements are twofold. First, it is clear from this data that SDW magnetic ordering occurs across the entire range of CuMn alloys which have typically been interpreted as spin glasses. Second, the more fundamental significance of this work is the suggestion via extrapolation that a peak in the magnetic susceptibility x(q) occurs in pure copper, at a value of q given by the Fermi-surface diameter 2k{sub F}.

  9. Magnetization dynamics, rheology, and an effective description of ferromagnetic units in dilute suspension.

    PubMed

    Ilg, Patrick; Kröger, Martin

    2002-08-01

    The rheological properties of a dilute suspension of ellipsoidal ferromagnetic particles in the presence of a magnetic field are studied on the basis of a kinetic model, where the flow and magnetic external fields couple in qualitatively different ways to the orientational behavior of the suspension. In the uniaxial phase the stress tensor is found to be of the same form as in the Ericksen-Leslie theory for nematic liquid crystals in the steady state. Expressions for a complete set of viscosity coefficients in terms of orientational order parameters are worked out. In the low Péclet number regime, the viscosity coefficients are given as explicit functions of the magnetic field and a particle shape factor, where the shape factor may equally represent a nonspherical unit (agglomerate, chain) composed of spherical particles. Effects due to possible flow-induced breakup of units are not covered in this work. Further, by considering the magnetization as the only relevant variable, a magnetization equation within an effective field approach is derived from the kinetic equation and compared to existing magnetization equations. The alignment angle of the magnetization and the first and second normal stress coefficient are studied for the special case of plane Couette flow. The assumptions employed are tested against a Brownian dynamics simulation of the full kinetic model, and a few comparisons with experimental data are made. PMID:12241181

  10. Thermoelectric power of small polarons in magnetic semiconductors

    SciTech Connect

    Liu, N.H.; Emin, D.

    1984-09-15

    The thermoelectric power (Seebeck coefficient) ..cap alpha.. of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qT..cap alpha.., where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2.

  11. How to Magnetically Generate Flows in Dead-Ends with Dilute Suspensions of Iron Particles

    NASA Astrophysics Data System (ADS)

    Bonnecaze, Roger; Clements, Michael

    2015-11-01

    Dilute suspensions of iron particles in the presence of a magnetic field can create flows in dead-ends of pores, channels and even blocked arteries to help dissolve clots. Observations show that added iron particles in a rotating magnetic field form rotating rods along the wall of the blocked channel, creating a convective flow. We present a proposed mechanism for this magnetically driven flow in the form of coupled particle-scale and channel-scale flow models. At the particle-scale, particles chain up to lengths balancing magnetic and hydrodynamic forces on the resulting rods. The weak gradient of the magnetic field causes the rods to accumulate on one side of the channel. The rods rotate due to the rotating magnetic field, provided the field strength is high enough, which creates a localized body couple in the flow that drives a macroscopic convective flow in the channel. Coupled transport equations for the particles and the suspension as a whole are presented. The model equations are solved asymptotically and numerically and compared to experimental observations. Design rules for implementation of this technique are presented to optimize the flow.

  12. On the self-organization of magnetic field and highly diluted matter in astrophysics

    NASA Astrophysics Data System (ADS)

    Berdichevsky, D. B.

    2015-12-01

    It is explored the self organization of matter and field in regions beyond our common reach on the surface of our planet and its atmospheric surroundings. This state of matter, which most basic property, the freezing in the magnetic field, see e.g., Chew et al, 1956, has proved to exist in the regions where robotic observations in the near and far space perform detailed observations of magnetic fields, and extreme dilute plasma (commonly about 1000 to 0.1 or less ionized particles per cubic cm). We present and discuss here simple hypotheses on the nature of what could be this state of magnetized matter which in the electron distribution shows a shape which often can successfully be described with a kappa distribution when inside a strongly magnetized transient, of the magnetic cloud kind, see e.g., Nieves Chinchilla and Figueroa-Viñas, 2008. This work is in many ways an extension of Alfven work on magnetized space plasmas, Alven, 1942. Chew, G.F., M.L., Goldberger, and F.E. Low, 1956, the Royal Soc. London, section Math & Phys Sc., 236, pp. 112. Nieves-Chinchilla, T., and A., Figueroa-Viñas, 2008, J. Geophys. Res., 113, A02105. Alfvén, H (1942). "Existence of electromagnetic-hydrodynamic waves". Nature 150: 405.. doi:10.1038/150405d0

  13. Controlled aggregation of magnetic ions in a semiconductor: an experimental demonstration.

    PubMed

    Bonanni, A; Navarro-Quezada, A; Li, Tian; Wegscheider, M; Matĕj, Z; Holý, V; Lechner, R T; Bauer, G; Rovezzi, M; D'Acapito, F; Kiecana, M; Sawicki, M; Dietl, T

    2008-09-26

    The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities. PMID:18851460

  14. Converting a topologically trivial superconductor into a chiral topological superconductor via diluted magnetic doping

    NASA Astrophysics Data System (ADS)

    Qin, Wei; Xiao, Di; Chang, Kai; Shen, Shun-Qing; Zhang, Zhenyu

    We employ two complementary theoretical approaches to explore the feasibility of altering the topological properties of two-dimensional Rashba spin-orbit coupled superconductors by proper introduction of magnetic disorders. First, using the self-consistent Born approximation, we show that a topologically trivial superconductor can be driven into a chiral topological superconductor upon diluted doping of isolated magnetic disorders, which gradually narrow, close, and reopen the quasi-particle gap of the paired electrons in a nontrivial manner. Such a topological phase transition is further characterized by the change in the corresponding topological invariant. The central predictions made here are then confirmed using the complementary numerical approach by solving the Bogoliubov-de Gennes equations self-consistently within a tight-binding model. We also discuss the validity of the present model studies in connection with existing experimental findings. Collectively, the present study offers appealing new schemes for potential experimental realization of topological superconductors. Supported by NSF of China.

  15. Enhancement of magnetization damping coefficient of permalloy thin films with dilute Nd dopants

    NASA Astrophysics Data System (ADS)

    Luo, C.; Feng, Z.; Fu, Y.; Zhang, W.; Wong, P. K. J.; Kou, Z. X.; Zhai, Y.; Ding, H. F.; Farle, M.; Du, J.; Zhai, H. R.

    2014-05-01

    For spintronics application, which requires fast field switching, it is important to have a kind of soft magnetic material with large damping coefficient. Here, we present the studies of the Nd dopant-level-dependent damping coefficient of Ndx-Py(1-x) thin films (30 nm) in a dilute region utilizing ferromagnetic resonance (FMR). With the Nd content increasing, the film structure was found to be changing from polycrystalline to amorphous when the Nd content is around 3.4%. Meanwhile, the magnetization decreases linearly. Interestingly, we find that along the easy axis, both low coercivity and high hysteresis squareness are simultaneously maintained in the system; i.e., the magnetic softness has been well kept. By theoretical fitting of the angular dependence of the FMR field, the first- and second-order magnetic anisotropy constants, K1 and K2, and the Lande g factor are obtained and discussed quantitatively. The measurements of angular and frequency dependence of the ferromagnetic resonance linewidth, as well as the theoretical fitting by considering the contributions of Gilbert damping, two-magnon scattering, and inhomogeneous broadening, show that the damping coefficient α increases rapidly (about 25-fold) as the Nd content increases to 11.6%, which is mainly due to the enhanced spin-orbit coupling by the Nd additives, supported by x-ray magnetic circular dichroism measurements.

  16. Mössbauer and vibrational DOS studies of diluted magnetic tin oxides and nano iron oxides

    NASA Astrophysics Data System (ADS)

    Nomura, K.; Rykov, A. I.; Navarro, A. M. Mudarra; Torres, C. E. Rodriguez; Errico, L. A.; Barrero, C. A.; Yoda, Y.

    2013-04-01

    The magnetic properties and Mössbauer results for SnO2 doped with 57Fe are reviewed, and the values of isomer shift and quadrupole splitting are compared with the results obtained by ab initio calculations. It is concluded that the exchange interactions between oxygen defects and magnetic atoms are responsible for long range magnetic interactions of dilute Fe ions dispersed in SnO2. Fe atom precipitated clusters may be formed in highly Fe doped SnO2 samples by annealing at relatively high temperatures for several hours. The reduction of the particle size to nano-scale dimensions induces magnetization, which can be associated with oxygen defects. We have measured the nuclear inelastic scattering (NIS) spectra of Fe oxides, and 57Fe and (Co or Mn) doped SnO2 synthesized mainly by sol-gel methods and we have derived the vibration density of states (VDOS). The local phonons are sensitive to the presence of precipitated clusters.

  17. Mössbauer and vibrational DOS studies of diluted magnetic tin oxides and nano iron oxides

    NASA Astrophysics Data System (ADS)

    Nomura, K.; Rykov, A. I.; Navarro, A. M. Mudarra; Torres, C. E. Rodriguez; Errico, L. A.; Barrero, C. A.; Yoda, Y.

    2014-01-01

    The magnetic properties and Mössbauer results for SnO2 doped with 57Fe are reviewed, and the values of isomer shift and quadrupole splitting are compared with the results obtained by ab initio calculations. It is concluded that the exchange interactions between oxygen defects and magnetic atoms are responsible for long range magnetic interactions of dilute Fe ions dispersed in SnO2. Fe atom precipitated clusters may be formed in highly Fe doped SnO2 samples by annealing at relatively high temperatures for several hours. The reduction of the particle size to nano-scale dimensions induces magnetization, which can be associated with oxygen defects. We have measured the nuclear inelastic scattering (NIS) spectra of Fe oxides, and 57Fe and (Co or Mn) doped SnO2 synthesized mainly by sol-gel methods and we have derived the vibration density of states (VDOS). The local phonons are sensitive to the presence of precipitated clusters.

  18. Electronic structure and magnetic properties of dilute U impurities in metals

    NASA Astrophysics Data System (ADS)

    Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

    2016-05-01

    The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

  19. Specific Heat of the Dilute Ising Magnet LiHoxY1-xF4

    NASA Astrophysics Data System (ADS)

    Quilliam, J. A.; Mugford, C. G. A.; Gomez, A.; Kycia, S. W.; Kycia, J. B.

    2007-01-01

    We present specific heat data on three samples of the dilute Ising magnet LiHoxY1-xF4 with x=0.018, 0.045, and 0.080. Previous measurements of the ac susceptibility of an x=0.045 sample showed the Ho3+ moments to remain dynamic down to very low temperatures, and the specific heat was found to have unusually sharp features. In contrast, our measurements do not exhibit these sharp features in the specific heat and instead show a broad feature, for all three samples studied, which is qualitatively consistent with a spin glass state. Integrating C/T, however, reveals an increase in residual entropy with lower Ho concentration, consistent with recent Monte Carlo simulations showing a lack of spin glass transition for low x.

  20. Relaxation and coherent oscillations in the spin dynamics of II-VI diluted magnetic quantum wells

    NASA Astrophysics Data System (ADS)

    Ungar, F.; Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2015-10-01

    We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling in bulk and quantum wells can compete resulting in qualitatively new dynamics when they act simultaneously. We concentrate on Hg1-x-yMnxCdyTe quantum wells, which have a highly tunable Rashba spin-orbit coupling. Our calculations use a recently developed formalism which incorporates electronic correlations originating from the exchange sd-coupling. We find that the dependence of electronic spin oscillations on the excess energy changes qualitatively depending on whether or not the spin-orbit interaction dominates or is of comparable strength with the sd interaction.

  1. Magnetic hysteresis curve influenced by power-semiconductor characteristics in pulse-width-modulation inverter

    NASA Astrophysics Data System (ADS)

    Fujisaki, Keisuke; Liu, Sungju

    2014-05-01

    The influence of power semiconductor characteristic in Pulse-width-modulation (PWM) inverter on the magnetic hysteresis curve in silicon steel is discussed through the measured magnetic hysteresis curves. The magnetic hysteresis curve of PWM inverter-fed silicon steel has a lot of minor loops as closed loops and open loops, which make an influence on the iron loss. Two shapes of minor loops are found to be caused by the voltage shifts and they are derived from the on-voltage of the semiconductors in PWM inverter circuit. Therefore, it is concluded that the power-semiconductor characteristic in PWM inverter makes an influence on the magnetic hysteresis curve in silicon steel.

  2. Bistable Magnetism and Potential for Voltage-Induced Spin Crossover in Dilute Magnetic Ferroelectrics.

    PubMed

    Weston, L; Cui, X Y; Ringer, S P; Stampfl, C

    2015-06-19

    A first-principles investigation into the magnetic ferroelectric PbTi(1-x)Co(x)O(3) has revealed a bi-stable magnetic system with strong spin-lattice coupling. The local distortions induced by the low-spin to high-spin crossover are ferroelectric in nature, and are characterized by the displacement of the dopant ion with respect to the surrounding O(6) octahedral cage. We demonstrate how this spin-lattice effect could mediate magnetoelectric coupling and possible electric field induced spin-crossover, indicating a promising route to voltage manipulation of isolated spins in a solid-state system. PMID:26197012

  3. Semiconductor-halfmetal-metal transition and magnetism of bilayer graphene nanoribbons/hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Ilyasov, V. V.; Meshi, B. C.; Nguyen, V. C.; Ershov, I. V.; Nguyen, D. C.

    2014-12-01

    The paper presents the results of ab initio study of electronic structure modulation and edge magnetism in the antiferromagnetic (AF) bilayer zigzag graphene nanoribbons (AF-BZGNR)/hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure induced with transverse external electric field (Eext) and nanomechanical compression (extension), performed within the framework of the density functional theory using Grimme's DFT(PBE)-D2 scheme. For the first time we established critical values of Eext and interlayer distance in the bilayer for the BZGNR/h-BN(0001) heterostructure providing for semiconductor-halfmetal-metal phase transition for one of the electron spin configurations. We discovered the effect of preserved local magnetic moment (0.3μB) of edge carbon atoms of the lower (buffer) graphene nanoribbon during nanomechanical uniaxial compression (or extension) of the BZGNR/h-BN(0001) semiconductor heterostructure. It has been demonstrated that magnetic properties of the AF-BZGNR/h-BN(0001) semiconductor heterostructure can be controlled using Eext. In particular, the local magnetic moment of edge carbon atoms decreases by 10% at a critical value of the positive potential. We have established that local magnetic moments and band gaps can be altered in a wide range using nanomechanical uniaxial compression and Eext, thus making the AF-BZGNR/h-BN(0001) semiconductor heterostructure potentially promising for nanosensors, spin filters, and spintronics applications.

  4. Electron correlations in semiconductors: Bulk cohesive properties and magnetic-field-induced Wigner crystal at heterojunctions

    SciTech Connect

    Louie, S.G.; Zhu, X.

    1992-08-01

    A correlated wavefunction variational quantum Monte Carlo approach to the studies of electron exchange and correlation effects in semiconductors is presented. Applications discussed include the cohesive and structural properties of bulk semiconductors, and the magnetic-field-induced Wigner electron crystal in two dimensions. Landau level mixing is shown to be important in determining the transition between the quantum Hall liquid and the Wigner crystal states in the regime of relevant experimental parameters.

  5. Regularities in temperature, magnetic field and pressure effect on the resistive properties of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Polyakov, P. I.; Kucherenko, S. S.

    2002-08-01

    The influence of hydrostatic pressure, magnetic field and temperature on resistivity behaviour of bulk and film samples La 0.9Mn 1.1O 3 and La 0.56Ca 0.24Mn 1.2O 3 at action of magnetic field and temperature has been analysed. It is established that the maximum of magnetoresistive and the revealed baroresistive, magnetobaroresistive effects coincide at the same temperature Tpp. This temperature is equal to the "metal-semiconductor" phase transition temperature Tms. "Cooling" and "heating" effects of pressure and magnetic field have been revealed. A mutual correspondence of T- P- H (6.2 K, 1 kbar, 2.7 kOe) influence on polycrystalline sample La 0.9Mn 1.1O 3 resistivity has been determined. The linear change of Tms( P) and Tms( H) in La 0.9Mn 1.1O 3, La 0.56Ca 0.24Mn 1.2O 3 resistivity have been found. An importance of the regularities of elastic-deforming correspondence of T- H- P influence on magnetic, resistivity properties, phase transitions and effects was elucidated and explained. An alternating influence of T- H- P and its role in resistivity has been pointed. A correlation between structural, elastic and resistive properties is specified.

  6. Magnetic dilution and domain selection in the X Y pyrochlore antiferromagnet Er2Ti2O7

    NASA Astrophysics Data System (ADS)

    Gaudet, J.; Hallas, A. M.; Maharaj, D. D.; Buhariwalla, C. R. C.; Kermarrec, E.; Butch, N. P.; Munsie, T. J. S.; Dabkowska, H. A.; Luke, G. M.; Gaulin, B. D.

    2016-08-01

    Below TN=1.1 K, the X Y pyrochlore Er2Ti2O7 orders into a k =0 noncollinear, antiferromagnetic structure referred to as the ψ2 state. The magnetic order in Er2Ti2O7 is known to obey conventional three-dimensional (3D) percolation in the presence of magnetic dilution, and in that sense is robust to disorder. Recently, however, two theoretical studies have predicted that the ψ2 structure should be unstable to the formation of a related ψ3 magnetic structure in the presence of magnetic vacancies. To investigate these theories, we have carried out systematic elastic and inelastic neutron scattering studies of three single crystals of Er2 -xYxTi2O7 with x =0 (pure), 0.2 (10 %Y ) and 0.4 (20 % Y ), where magnetic Er3 + is substituted by nonmagnetic Y3 +. We find that the ψ2 ground state of pure Er2Ti2O7 is significantly affected by magnetic dilution. The characteristic domain selection associated with the ψ2 state, and the corresponding energy gap separating ψ2 from ψ3, vanish for Y3 + substitutions between 10 % Y and 20 % Y , far removed from the three-dimensional percolation threshold of ˜60 % Y . The resulting ground state for Er2Ti2O7 with magnetic dilutions from 20 % Y up to the percolation threshold is naturally interpreted as a frozen mosaic of ψ2 and ψ3 domains.

  7. Specific Heat of the Dilute Ising Magnet LiHoxY1-xF4

    NASA Astrophysics Data System (ADS)

    Quilliam, Jeffrey; Mugford, Chas; Lettress, Lauren; Kycia, Jan

    2007-03-01

    We will present specific heat results on the dilute dipolar-coupled Ising magnet LiHoxY1-xF4. This material was previously observed to change from a spin glass to an unusual ``anti-glass'' state at a Ho concentration of x˜0.045. This state showed dynamics that are very different from those of a spin glass and also exhibited sharp features in its specific heat at around 100 and 300 mK. In contrast, our measurements of the heat capacity do not reproduce these sharp features and instead find broad curves for three concentrations (1.8%, 4.5% and 8.0%). Integrating C/T reveals a residual entropy S0 which is 0 for 8.0% Ho but increases with lower concentration (to 0.31R at 1.8% Ho). This provides some evidence for a change to a different magnetic ground state below 8.0% Ho and is qualitatively consistent with Monte Carlo simulations. AC susceptibility measurements probing the dynamics of this system are currently being performed and results will be presented. S. Ghosh et al., Science 296, 2195 (2002) S. Ghosh et al., Nature 425, 48 (2003). J. Snider and C. C. Yu, Phys. Rev. B 72, 214203 (2005).

  8. First-principles approach to spin-orbit coupling in dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Theurich, G.; Hill, N. A.

    2002-09-01

    We describe the implementation of a spin-polarized fully relativistic plane wave pseudopotential density functional method. Using the method, we compare the calculated electronic band structures of hypothetical ferromagnetic zinc blende structure MnAs and MnSe within the scalar-relativistic and fully relativistic pseudopotential approximations. We extract the conduction band and valence band exchange constants and extrapolate to the low concentration limit following a simple mean field approximation. Finally we investigate how strongly the exchange constants are affected by the spin-orbit term and provide a computational justification for extracting these constants from scalar-relativistic calculations.

  9. Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy

    SciTech Connect

    Hammel, P.C.; Moore, G.; Roukes, M.; Zhenyong Zhang

    1996-10-01

    This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This requires building an instrument designed to achieve nanometer-scale resolution at buried semiconductor interfaces. High-resolution, three-dimensional depth profiling of semiconductors is critical in the development and fabrication of semiconductor devices. Currently, there is no capability for direct, high-resolution observation and characterization of dopant density, and other critical features of semiconductors. The successful development of MRFM in conjunction with modifications to improve resolution will enable for the first time detailed structural and electronic studies in doped semiconductors and multilayered nanoelectronic devices, greatly accelerating the current pace of research and development.

  10. Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

    NASA Astrophysics Data System (ADS)

    Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

    2015-02-01

    The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

  11. Photoexcitation-induced magnetism in arrays of semiconductor nanoparticles with a strong excitonic oscillator strength

    NASA Astrophysics Data System (ADS)

    Yannopapas, V.; Vitanov, N. V.

    2006-11-01

    A type of magnetic metamaterial which exhibits strong magnetic activity within and below the optical region is presented. The metamaterial consists of semiconductor nanoparticles such as CuCl or Cu2O particles. The magnetic activity is attributed to the strong oscillator strength stemming from the exciton absorption line. The magnetic permeability of the proposed metamaterial is calculated from the extended Maxwell-Garnett theory, and its validity is compared against ab initio layer multiple-scattering calculations. The proposed structure is a low-loss, subwavelength, isotropic magnetic metamaterial, and its response is robust against stacking and point disorder.

  12. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  13. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism

    SciTech Connect

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Sun, Xin; Zu, Xiaotao; Gao, Fei

    2012-03-08

    The electronic and magnetic properties of graphene nanoflakes (GNFs) can be tuned by patterned adsorption of hydrogen. Controlling the H coverage from bare GNFs to half hydrogenated and then to fully hydrogenated GNFs, the transformation of small-gap semiconductor {yields} half-metal {yields} wide-gap semiconductor occurs, accompanied by a magnetic {yields} magnetic {yields} nonmagnetic transfer and a nonmagnetic {yields} magnetic {yields} nonmagnetic transfer for triangular and hexagonal nanoflakes, respectively. The half hydrogenated GNFs, associated with strong spin polarization around the Fermi level, exhibit the unexpected large spin moment that is scaled squarely with the size of flakes. The induced spin magnetizations of these nanoflakes align parallel and lead to a substantial collective character, enabling the half hydrogenated GNFs to be spin-filtering flakes. These hydrogenation-dependent behaviors are then used to realize an attractive approach to engineer the transport properties, which provides a new route to facilitate the design of tunable spin devices.

  14. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  15. Conductivity and magnetic properties of TmSe and TmS: Comparison to the dilute cases

    NASA Astrophysics Data System (ADS)

    Holtzberg, F.; Flouquet, J.; Haen, P.; Lapierre, F.; Lassailly, Y.; Vettier, C.

    1985-04-01

    Magnetization, neutron diffraction, and resistivity measurements performed on the compounds TmSe and TmS are compared to those on the dilute alloys (Tm,Y)Se and (Tm,Y)S. In the paramagnetic regime, major differences exist between a regular array of Tm ions (TmSe and TmS) and the dilute systems. Localization (TmSe) or magnetic correlations (TmS) appear clearly in the conductivity behavior or in the dependence of the static susceptibility. A low content of Y atoms in TmSe has a drastic effect on the conductivity and on the magnetic order. We will discuss the connection between the degeneracy of the ground state with the opening of a gap.

  16. Origin and enhancement of spin polarized current in diluted magnetic oxides by oxygen vacancies

    NASA Astrophysics Data System (ADS)

    Chou, Hsiung; Yang, Kung-Shang; Tsao, Yao-Chung; Dwivedi, G. D.; Lin, Cheng-Pang; Sun, Shih-Jye; Lin, L. K.; Lee, S. F.

    2016-04-01

    Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (VO) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1%-30%)H2]. We found that the conductivity increases with an increase of VO via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of VO and increase in its concentration. The transport measurement shows that by manipulating VO, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%.

  17. Magnetic Field Applications in Semiconductor Crystal Growth and Metallurgy

    NASA Technical Reports Server (NTRS)

    Mazuruk, Konstantin; Ramachandran, Narayanan; Grugel, Richard; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Traveling Magnetic Field (TMF) technique, recently proposed to control meridional flow in electrically conducting melts, is reviewed. In particular, the natural convection damping capability of this technique has been numerically demonstrated with the implication of significantly improving crystal quality. Advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, are discussed. Finally, results of experiments with mixing metallic alloys in long ampoules using TMF is presented

  18. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    NASA Astrophysics Data System (ADS)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-01

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  19. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  20. Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism

    NASA Technical Reports Server (NTRS)

    Cohen, M. H.

    1973-01-01

    The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.

  1. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  2. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  3. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and {sup 13}C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution {sup 1}H and {sup 13}C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 {angstrom}. Internal motion is estimated to be slow with a correlation time > 10{sup {minus}8} s{sup {minus}1}. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O{sub 2} and ultraviolet. A method for measuring {sup 14}N-{sup 1}H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T{sub 1} and T{sub 2} experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in {sup 13}C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  4. Electronic structure and exchange interactions in diluted semimagnetic semiconductors (Zn,Co)Se and (Zn,Mn)Se

    NASA Astrophysics Data System (ADS)

    Mašek, J.

    1991-05-01

    A comparative study of the electronic structure of (Zn,Co)Se and (Zn,Mn)Se is done by using a tight-binding version of the coherent potential approximation. The densities of states, relevant for a photoemission experiment, are calculated for a magnetically disordered phase. The exchange constant Jpd is obtained from the splitting of the valence band top in the ferromagnetic phase of the mixed crystal; Jdd is estimated from the energy of a spin reversal. We explain the large exchange constant in the Co-based systems as a result of efficient hybridization of the d-states with the valence band.

  5. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    SciTech Connect

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  6. Strongly correlated systems: Magnetic measurements of magnesium diboride and group IV magnetic semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Guchhait, Samaresh

    Nuclear Magnetic Resonance Force Microscopy (NMRFM) is a unique quantum microscopy technique, which combines the three-dimensional imaging capabilities of magnetic resonance imaging (MRI) with the high sensitivity and resolution of atomic force microscopy (AFM). It has potential applications in many different fields. This novel scanning probe instrument holds potential for atomic-scale resolution. MgB2 is a classic example of two-band superconductor. However, the behavior of these two bands below the superconducting transition temperature is not well understood yet. Also, the anisotropic relaxation times of single crystal MgB2 have not been measured because it is not yet possible to grow large enough MgB2 single crystals for conventional NMR. Using our homemade NMRFM probe, we have set out to measure the relaxation times of micron size MgB2 single crystals to answer several questions relating to the anisotropy, multiband behavior, and coherence effects in this unusual superconductor. The goal of a second project is to study the effects of doping on the critical current of MgB2 superconducting wires. Ti-sheathed MgB 2 wires doped with nanosize crystalline-SiC up to a concentration of 15 wt% SiC have been fabricated, and the effects of the SiC doping on the critical current density (Jc) and other superconducting properties studied. In contrast with the previously reported results, our measurements show that SiC doping decreases Jc over almost the whole field range from 0 to 7.3 tesla at all temperatures. Furthermore, it is found that the degradation of Jc becomes stronger at higher SiC doping levels. Our results indicate that these negative effects on Jc could be attributed to the absence of significant effective pinning centers (mainly Mg2Si) due to the high chemical stability of the crystalline-SiC particles. The principle goal of a third project, the study of magnetic semiconductors, is to investigate magnetic properties of Mn-implanted GeC thin films. 20 ke

  7. Study on the oxygen vacancy redistribution and the mechanism of electrical manipulation of ferromagnetism in diluted magnetic oxides

    SciTech Connect

    Ren, Shuxia; Dong, Jingyu; Chen, Wei Zhang, Liyong; Guo, Jiajun; Zhang, Li; Zhao, Jing; Zhao, Xu

    2015-12-21

    Electrical manipulation of room temperature ferromagnetism (RTFM) has been observed in several kinds of transition metal doped diluted magnetic oxide films. We demonstrate using X-ray photoelectron spectroscopy that the redistribution of the oxygen vacancies in a film under an electric field plays a crucial role in the enhancement of the RTFM. Based on a detailed analysis of the X-ray photoelectron spectroscopy data for the oxygen vacancy distribution in different resistive states, a unified mechanism has been proposed. This work points out a new direction for improving the magnetic properties of these materials by controlling oxygen vacancies in the interior of the films.

  8. Spin noise explores local magnetic fields in a semiconductor

    NASA Astrophysics Data System (ADS)

    Ryzhov, Ivan I.; Kozlov, Gleb G.; Smirnov, Dmitrii S.; Glazov, Mikhail M.; Efimov, Yurii P.; Eliseev, Sergei A.; Lovtcius, Viacheslav A.; Petrov, Vladimir V.; Kavokin, Kirill V.; Kavokin, Alexey V.; Zapasskii, Valerii S.

    2016-02-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new - magnetometric - potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This “optical field” is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates.

  9. Spin noise explores local magnetic fields in a semiconductor

    PubMed Central

    Ryzhov, Ivan I.; Kozlov, Gleb G.; Smirnov, Dmitrii S.; Glazov, Mikhail M.; Efimov, Yurii P.; Eliseev, Sergei A.; Lovtcius, Viacheslav A.; Petrov, Vladimir V.; Kavokin, Kirill V.; Kavokin, Alexey V.; Zapasskii, Valerii S.

    2016-01-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new – magnetometric – potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This “optical field” is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates. PMID:26882994

  10. Spin noise explores local magnetic fields in a semiconductor.

    PubMed

    Ryzhov, Ivan I; Kozlov, Gleb G; Smirnov, Dmitrii S; Glazov, Mikhail M; Efimov, Yurii P; Eliseev, Sergei A; Lovtcius, Viacheslav A; Petrov, Vladimir V; Kavokin, Kirill V; Kavokin, Alexey V; Zapasskii, Valerii S

    2016-01-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new - magnetometric - potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This "optical field" is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates. PMID:26882994

  11. Magnetic Properties of Randomly Diluted Antiferromagnetic System: COBALT(P)MAGNESIUM(1-P)OXYGEN.

    NASA Astrophysics Data System (ADS)

    Kannan, Raman

    In this work, the effect of randomly diluting CoO (a fcc antiferromagnet with Neel temperature T _{rm N} = 289 K) with MgO has been investigated using temperature dependent dc magnetic susceptibility measurements. About twenty samples of Co _{rm p}Mg _{rm 1-p}O with p = 0.10, 0.13, 0.17, 0.22, 0.23, 0.31, 0.33, 0.36, 0.41, 0.46, 0.49, 0.53, 0.56, 0.60, 0.64, 0.70, 0.80 and 0.87, were investigated in the temperature range of 1.6 K to 300 K. These powder samples were prepared starting from the nitrates, Co(NO _3)_2cdot6H _2O and Mg(NO_3)_2 cdot6H_2O. The samples were characterized by magnetic measurements for the presence of ferromagnetic impurities, by X-ray diffraction technique for the determination of crystal structure and lattice constants, and by atomic absorption spectroscopy for the determination of the composition parameter p. The lattice constant is found to vary linearly with p, in accordance with Vegard's Law. The magnetic susceptibility, chi , measurements were carried out with a Faraday balance, employing Lewis coils. The samples were cooled either in zero field (zfc) or in a field of 50 Oe (fc) to the lowest temperature (1.6 K or 4.2 K), followed by chi measurements in 50 Oe with increasing temperatures. A Neel temperature T_{ rm N}, as determined by d(chi T)/dT, is observed for all p >=q 0.17. By extrapolation and by the behavior of the low temperature magnetization, it is determined that the percolation threshold p_{rm c} = 0.13 +/- 0.01. This is in agreement with the theoretical estimate of p_{ rm c} = 0.136 for fcc lattice with nn and nnn included. The variation of T_{ rm N} with p is non-linear for p < 0.6. However no theoretical variation of T _{rm N} vs p is available for fcc lattice with both nn and nnn interactions included. For the high temperature region (T > T_{rm N}), the data is fit to the Curie-Weiss law and the Curie-Weiss temperature theta(p), the molar and gram Curie constants C_{rm M}(p) and C_{rm g}(p) respectively and the effective

  12. A structurally-controllable spin filter in a δ-doped magnetically modulated semiconductor nanostructure with zero average magnetic field

    NASA Astrophysics Data System (ADS)

    Shen, Li-Hua; Ma, Wen-Yue; Zhang, Gui-Lian; Yang, Shi-Peng

    2015-07-01

    We report on a theoretical investigation of spin-polarized transport in a δ-doped magnetically modulated semiconductor nanostructure, which can be experimentally realized by depositing a ferromagnetic stripe on the top of a semiconductor heterostructure and by using the atomic layer doping technique such as molecular beam epitaxy (MBE). It is shown that although such a nanostructure has a zero average magnetic filed, a sizable spin polarization exists due to the Zeeman splitting mechanism. It is also shown that the degree of spin polarization varies sensitively with the weight and/or position of the δ-doping. Therefore, one can conveniently tailor the behaviour of the spin-polarized electron by tuning the δ -doping, and such a device can be employed as a controllable spin filter for spintronics.

  13. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Chang-Hwan Kim

    2003-12-12

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  14. Extremely large magnetoresistance and magnetic logic by coupling semiconductor nonlinear transport effect and anomalous Hall Effect

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaozhong; Luo, Zhaochu

    Size limitation of silicon FET hinders the further scaling down of silicon based CPU. To solve this problem, spin based magnetic logic devices were proposed but almost all of them could not be realized experimentally except for NOT logic operation. A magnetic field controlled reconfigurable semiconductor logic using InSb was reported. However, InSb is very expensive and not compatible with the silicon technology. Based on our Si based magnetoresistance (MR) device, we developed a Si based reconfigurable magnetic logic device, which could do all four Boolean logic operations including AND, OR, NOR and NAND. By coupling nonlinear transport effect of semiconductor and anomalous Hall effect of magnetic material, we propose a PMA material based MR device with a remarkable non local MR of >20000 % at ~1 mT. Based on this MR device, we further developed a PMA material based magnetic logic device which could do all four Boolean logic operations. This makes it possible that magnetic material does both memory and logic. This may result in a memory-logic integrated system leading to a non von Neumann computer

  15. Ferromagnetism of magnetic semiconductors: Zhang-Rice limit

    NASA Astrophysics Data System (ADS)

    Dietl, T.; Matsukura, F.; Ohno, H.

    2002-07-01

    It is suggested that p-d hybridization contributes significantly to the hole binding energy Eb of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both the strong increase of Eb and the evolution of a Mn spin-resonance spectrum with the magnitude of valence-band offsets. The high Curie temperature above room temperature is shown to be in accordance with the mean-field Zener model.

  16. Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering

    SciTech Connect

    Dinia, A.; Schmerber, G.; Meny, C.; Pierron-Bohnes, V.; Beaurepaire, E.

    2005-06-15

    We have used magnetron cosputtering to grow Zn{sub 1-x}Co{sub x}O magnetic dilute semiconductors. The growth has been performed on SiO{sub 2}/Si and Al{sub 2}O{sub 3}(0001) substrates. The Co concentration has been varied between 0.1 and 0.25 and the substrate temperature between room temperature and 600 deg. C. X-ray diffraction analysis has shown that for the films grown on Si substrates the structural quality of the film is improved by increasing the growth temperature and/or postgrowth annealing. The films are textured with c axis of the wurtzite structure along the growth direction. However, for the films grown on Al{sub 2}O{sub 3} substrate quasi-epitaxial films have been obtained for 600 deg. C substrate temperature. Magnetization measurements have shown that the ferromagnetism is directly correlated to the structural quality and appears by increasing the growth temperature and/or postgrowth annealing. Moreover, for the highly textured film a clear magnetic perpendicular anisotropy has been evidenced with the easy magnetization axis along the growth direction. To evidence the intrinsic nature of the ferromagnetism in the films, transmission optical measurements have been used. They show three absorption bands that are characteristics of d-d transitions of tetrahedrally coordinated Co{sup 2+}. This has been supported by nuclear magnetic resonance and magnetic thermal variation.

  17. Transition metal doped semiconductor quantum dots: Optical and magnetic properties

    NASA Astrophysics Data System (ADS)

    Dahnovsky, Yuri; Proshchenko, Vitaly; Pimachev, Artem

    We study optical and magnetic properties of CdSe and Cd-Mn-Se quantum dots (QD). We find that there are two luminescence lines, one is fast and another is slow (~1ms). With the increase of a QD diameter the slow luminescence disappears at some critical QD size, thus only one line (fast) remains. Using the SAC SI computational method we find that D = 3.2 nm and D = 2.7 nm if the Mn impurity is located inside a QD or on a QD surface, respectively. For two or four Mn atoms in the quantum dot, now absorption takes place because the transition is spin-allowed. The DFT calculations of the magnetic state reveal that it is an antiferromagnet. We also study other quantum dots such as Cd-Mn-Se, Zn-Mn-S, and Zn-Mn-Se, doped and undoped. We find the slow luminescence energies for low concentrations of Mn impurities for each QD type. The calculations indicate that two luminescence lines, fast and slow, should always take place. However for Pb-Mn-S quantum dots there are now Mn levels inside a HOMO-LUMO gap, i.e., the Mn-levels are located in a PbS conduction band. The presence of Mn dopants increases the band gap and also removes the exciton peak. This effect is different to the other quantum dots.

  18. Temperature dependence of the magnetic hyperfine field at an s-p impurity diluted in RNi2

    NASA Astrophysics Data System (ADS)

    de Oliveira, A. L.; Chaves, C. M.; Oliveira, N. A. de; Troper, A.

    2016-03-01

    We study the formation of local magnetic moments and magnetic hyperfine fields at an s-p impurity diluted in intermetallic Laves phase compounds RNi2 (R=Nd, Sm, Gd, Tb, Dy) at finite temperatures. We start with a clean host and later the impurity is introduced. The host has two-coupled (R and Ni) sublattice Hubbard Hamiltonians but the Ni sublattice can be disregarded because its d band, being full, is magnetically ineffective. Also, the effect of the 4f electrons of R is represented by the polarization they produce on the d band. This leaves us with a lattice of effective rare earth R-ions with polarized electrons. For the dd electronic interaction we use the Hubbard-Stratonovich identity in a functional integral approach in the static saddle point approximation.

  19. Convection Induced by Traveling Magnetic Fields in Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Konstantin, Mazuruk

    2000-01-01

    Axisymmetric traveling magnetic fields (TMF) can be beneficial for crystal growth applications. such as the vertical Bridgman, float zone or traveling heater methods. TMF induces a basic flow in the form of a single roll. This type of flow can enhance mass and heat transfer to the growing crystal. More importantly, the TMF Lorentz body force induced in the system can counterbalance the buoyancy forces, so the resulting convection can be much smaller and even the direction of it can be changed. In this presentation, we display basic features of this novel technique. In particular, numerical calculations of the Lorentz force for arbitrary frequencies will be presented along with induced steady-state fluid flow profiles. Also, numerical modeling of the TMF counter-balancing natural convection in vertical Bridgman systems will be demonstrated.

  20. Magnetic fields and the technology challenges they pose to beam-based equipment: a semiconductor perspective

    NASA Astrophysics Data System (ADS)

    Esqueda, Vincent; Montoya, Julian A.

    2005-08-01

    As semiconductor devices shrink in size to accommodate faster processing speeds, the need for higher resolution beam-based metrology equipment and beam-based writing equipment will increase. The electron and ion beams used within these types of equipment are sensitive to very small variations in magnetic force applied to the beam. This phenomenon results from changes in Alternating Current (AC) and Direct Current (DC) magnetic flux density at the beam column which causes deflections of the beam that can impact equipment performance. Currently the most sensitive beam-based microscope manufacturers require an ambient magnetic field environment that does not have variations that exceed 0.2 milli-Gauss (mG). Studies have shown that such low levels of magnetic flux density can be extremely difficult to achieve. As examples, scissor lifts, vehicles, metal chairs, and doors moving in time and space under typical use conditions can create distortions in the Earth's magnetic field that can exceed 0.2 mG at the beam column. In addition it is known that changes in the Earth's magnetic field caused by solar flares, earthquakes, and variations in the Earth's core itself all cause changes in the magnetic field that can exceed 0.2 mG. This paper will provide the reader with the basic understanding of the emerging problem, will discuss the environmental and facility level challenges associated in meeting such stringent magnetic field environments, will discuss some of the mitigation techniques used to address the problem, and will close by discussing needs for further research in this area to assure semiconductor and nanotechnology industries are pre-positioned for even more stringent magnetic field environmental requirements.

  1. Detecting excitation and magnetization of individual dopants in a semiconductor two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Wiebe, Jens

    2011-03-01

    Magnetic atoms doped into a semiconductor are the building blocks for bottom up spintronic and quantum logic devices. They also provide model systems for the investigation of fundamental effects. In order to correlate the dopant's atomic structure with its magnetism magnetically sensitive techniques with atomic resolution are a prerequisite. Here, I show electrical excitation and read-out [ 1 ] of single magnetic dopant associated spins in a two-dimensional electron gas (2DEG) confined to a semiconductor surface [ 2 ] using spin-resolved scanning tunneling spectroscopy [ 3 ] . I will review our real-space study of the quantum Hall transition in the 2DEG [ 2 ] and of the magnetic properties of the dopants [ 1 ] . Finally, I will demonstrate that the dopant serves as an atomic scale probe for local magnetometry of the 2DEG. This work was done in collaboration with A. A. Khajetoorians, B. Chillian, S. Schuwalow, F. Lechermann, K. Hashimoto, C. Sohrmann, T. Inaoka, F. Meier, Y. Hirayama, R. A. Römer, M. Morgenstern, and R. Wiesendanger. [ 1 ] A. A. Khajetoorians et al., Nature 467, 1084 (2010). [ 2 ] K. Hashimoto et al., Phys. Rev. Lett. 101, 256802 (2008). [ 3 ] J. Wiebe et al., Rev. Sci. Instrum. 75, 4871 (2004). We acknowledge financial support from ERC Advanced Grant ``FURORE'', by the DFG via SFB668 and GrK1286, and by the city of Hamburg via the cluster of excellence ``Nanospintronics''.

  2. Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3

    NASA Astrophysics Data System (ADS)

    Alvarez-Quiceno, J. C.; Cabrera-Baez, M.; Ribeiro, R. A.; Avila, M. A.; Dalpian, G. M.; Osorio-Guillén, J. M.

    2016-07-01

    FeGa3 is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa3 -xGex using density functional theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.

  3. Tunable surface plasmon polaritons in metal-strip waveguides with magnetized semiconductor substrates in Voigt configuration

    NASA Astrophysics Data System (ADS)

    Mathew, Gishamol; Mathew, Vincent

    2012-05-01

    The properties of surface plasmon polaritons (SPPs) in a magnetically tunable strip waveguide geometry comprising of a metal film of finite width deposited on a magnetized semiconductor and covered by an isotropic dielectric material were studied in Voigt configuration. The method of lines was used to compute the dispersion relation of fundamental modes, and the dependence of the propagation constant on metal film dimensions, material parameters and biasing magnetic field was considered. The bounded SPPs are nonreciprocal with respect to the direction of the biasing magnetic field, producing a nonreciprocal phase shift of the order of 2-18 rad mm-1 at a wavelength of excitation 1.55 μm. Moreover, controlled propagation of SPP modes and their effective tuning are possible in this strip geometry, which enables the design and development of tunable optoelectronic devices.

  4. Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn

    NASA Astrophysics Data System (ADS)

    Bannikov, V. V.; Ivanovskii, A. L.

    2013-02-01

    Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (Xingxing Li et al., arXiv:1208.1355) was proposed. In this work, a novel way to creation of bipolar magnetic semiconductors by doping of non-magnetic semiconducting 1111 phases with magnetic d n < 10 atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite 100% spin polarization where multiple gate-controlled spin-polarization can be expected are proposed.

  5. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    PubMed Central

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  6. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    NASA Astrophysics Data System (ADS)

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV) (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  7. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  8. Magnetic damping of thermocapillary convection in the floating-zone growth of semiconductor crystals

    NASA Astrophysics Data System (ADS)

    Morthland, Timothy Edward

    The floating zone is one process used to grow high purity semiconductor single crystals. In the floating-zone process, a liquid bridge of molten semiconductor, or melt, is held by surface tension between the upper, melting polycrystalline feed rod and the lower, solidifying single crystal. A perfect crystal would require a quiescent melt with pure diffusion of dopants during the entire period needed to grow the crystal. However, temperature variations along the free surface of the melt lead to gradients of the temperature-dependent surface tension, driving a strong and unsteady flow in the melt, commonly labeled thermocapillary or Marangoni convection. For small temperature differences along the free surface, unsteady thermocapillary convection occurs, disrupting the diffusion controlled solidification and creating undesirable dopant concentration variations in the semiconductor single crystal. Since molten semiconductors are good electrical conductors, an externally applied, steady magnetic field can eliminate the unsteadiness in the melt and can reduce the magnitude of the residual steady motion. Crystal growers hope that a strong enough magnetic field will lead to diffusion controlled solidification, but the magnetic field strengths needed to damp the unsteady thermocapillary convection as a function of floating-zone process parameters is unknown. This research has been conducted in the area of the magnetic damping of thermocapillary convection in floating zones. Both steady and unsteady flows have been investigated. Due to the added complexities in solving Maxwells equations in these magnetohydrodynamic problems and due to the thin boundary layers in these flows, a direct numerical simulation of the fluid and heat transfer in the floating zone is virtually impossible, and it is certainly impossible to run enough simulations to search for neutral stability as a function of magnetic field strength over the entire parameter space. To circumvent these difficulties

  9. Magnetic field dependence of the product yields of cycloheptanone photolysis in the dilute gas phase

    NASA Astrophysics Data System (ADS)

    Stich, E. M.; Baumeister, W. F.; Huber, J. Robert

    1984-07-01

    The product yields of the gas-phase photolysis of cycloheptanone were measured in magnetic fields up to 10 kG. The magnetic-field effect is explained in terms of the radical pair model. A reaction mechanism is proposed that explains the magnetic field dependence, pressure dependence, and excitation enegy dependence of the gas-phase photochemistry of cycloheptanone.

  10. Possible colloid crystal formation in a magnetized and inhomogeneous semiconductor plasma

    SciTech Connect

    Salimullah, M.; Ehsan, Z.; Zubia, K.; Shah, H. A.; Murtaza, G.

    2007-09-01

    We investigate the detailed properties of the modification of the Debye-Hueckel and the consequent oscillatory wake potentials in the presence of a density inhomogeneity and external static uniform electric and magnetic fields in an ion-implanted n-type piezoelectric semiconductor. It is found that the external fields and the density nonuniformity have significant effects on the static and dynamical electrostatic potentials. The possibility of the long-ranged order formation of colloids of the implanted ions, leading to modification of the electrical, thermodynamic, and optical properties of the 'soft matter', has been pointed out. The periodic wakefields besides the usual static Coulombian Debye-Hueckel potential may cause the long-range ordered structures of the charged colloidal particulates within the semiconductor to show various additional properties.