Science.gov

Sample records for dislocation density gan

  1. High-resistance GaN epilayers with low dislocation density via growth mode modification

    NASA Astrophysics Data System (ADS)

    Xu, Z. Y.; Xu, F. J.; Wang, J. M.; Lu, L.; Yang, Z. J.; Wang, X. Q.; Shen, B.

    2016-09-01

    High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 1016 Ω/sq has been achieved at room temperature by diminishing the oxygen impurity level close to the substrate with an AlN blocking layer. Attributed to this method which offers more freedom to tailor the growth mode, a three-dimensional (3D) growth process is introduced by adjusting the growth pressure and temperature at the initial stage of the GaN epitaxy to improve the crystalline quality. The large 3D GaN grains formed during this period roughen the surface, and the following coalescence of the GaN grains causes threading dislocations bending, which finally remarkably reduces the dislocation density.

  2. Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

    SciTech Connect

    ASHBY,CAROL I.; WILLAN,CHRISTINE C.; HAN,JUNG; MISSERT,NANCY A.; PROVENCIO,PAULA P.; FOLLSTAEDT,DAVID M.; PEAKE,GREGORY M.; GRIEGO,LEONARDO

    2000-07-31

    The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 10{sup 9}/cm{sup 2}. Such high dislocation densities degrade both the electronic and photonic properties of the material. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy (CE), which employs prepatterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is prepatterned with narrow lines and etched to a depth that permits coalescence of laterally growing III-N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low dislocation densities typical of epitaxial lateral overgrowth (ELO) are obtained in the cantilever regions and the TD density is also reduced up to 1 micrometer from the edge of the support regions.

  3. Increased thermal conductivity of free-standing low-dislocation-density GaN films

    NASA Astrophysics Data System (ADS)

    Liu, Weili; Balandin, Alexander A.; Lee, Changho; Lee, Hae-Yong

    2005-09-01

    Proposed high-power electronic and optoelectronic applications of GaN materials rely heavily on the effectiveness of heat removal from the devices. Here we report the results of our measurements of thermal conductivity in the thick free-standing GaN films prepared by hydride vapor phase epitaxy. The fabrication method allows one to grow the low-dislocation density films without the use of non-native substrates. Our experimental data show that the room tempera- ture thermal conductivity in free-standing GaN films can be as high at 225 W/mK, which is a factor of 1.8 increase compared to a reference GaN film grown on sapphire substrate. The modeling, performed for the given sample parameters, indicates that the low-temperature thermal conductivity can reach a record value of 7460 W/mK. The presented results are important for the thermal management optimization of GaN-based devices.

  4. Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process

    NASA Astrophysics Data System (ADS)

    Chen, X.; Uesugi, T.

    2006-01-01

    From one uninterrupted growth process, GaN films were deposited on maskless stripe-patterned Si(111) substrates using the facet-initiated growth technique. The epilayer with a flat surface has a thickness of ˜1.3μm. The influence of stress on the behavior of dislocations in the crystal during growth was observed by the transmission electron microscopy (TEM). Concentrated lines of dislocations were found along the coalescence boundaries by atomic force microscopy (AFM). Few dislocations were detected in the other area. The average threading dislocation density of the GaN layer was decreased to ˜1.7×108cm-2. These dislocations have pure or partial screw dislocation characteristics.

  5. Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

    NASA Astrophysics Data System (ADS)

    Pandey, Akhilesh; Yadav, Brajesh S.; Rao, D. V. Sridhara; Kaur, Davinder; Kapoor, Ashok Kumar

    2016-06-01

    Results on the investigations of the dislocation etch pits in the GaN layers grown on sapphire substrate by metal organic chemical vapor deposition are revealed by wet chemical etching, and dry etching techniques are reported. The wet etching was carried out in molten KOH, and inductively coupled plasma (ICP) was used for dry etching. We show that ICP using dry etching and wet chemical etching using KOH solution under optimal conditions give values of dislocation density comparable to the one obtained from the high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy investigations. Investigated threading dislocation density is in the order of ~109/cm2 using different techniques.

  6. Dislocation core in GaN

    SciTech Connect

    Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack; O'Keefe, Michael A.

    2002-02-20

    Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders of magnitude higher dislocation density than that for III-V arsenide and phosphide diodes. Understanding and determination of dislocation cores in GaN is crucial since both theoretical and experimental work are somewhat contradictory. Transmission Electron Microscopy (TEM) has been applied to study the layers grown by hydride vapor-phase epitaxy (HVPE) and molecular beam epitaxy (MBE) (under Ga rich conditions) in plan-view and cross-section samples. This study suggests that despite the fact that voids are formed along the dislocation line in HVPE material, the dislocations have closed cores. Similar results of closed core are obtained for the screw dislocation in the MBE material, confirming earlier studies.

  7. Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Barchuk, M.; Röder, C.; Shashev, Y.; Lukin, G.; Motylenko, M.; Kortus, J.; Pätzold, O.; Rafaja, D.

    2014-01-01

    The correlation between the residual stress and the density of threading dislocations was investigated in polar GaN layers that were grown by using hydride vapor phase epitaxy (HVPE) on three different GaN templates. The first template type was GaN grown on sapphire by metal-organic vapor phase epitaxy. The second template type was a closed GaN nucleation layer grown on sapphire by HVPE. The third template type was a non-closed GaN nucleation layer grown by HVPE, which formed isolated pyramids on the sapphire surface. The residual stress was determined using the combination of micro-Raman spectroscopy and modified sin2 ψ method. The interplanar spacings needed for the sin2 ψ method were obtained from the reciprocal space maps that were measured using high-resolution X-ray diffraction. The density of threading dislocations was concluded from the broadening of the reciprocal lattice points that was measured using high-resolution X-ray diffraction as well. The fitting of the reciprocal space maps allowed the character of the threading dislocations to be described quantitatively in terms of the fractions of edge and screw dislocations. It was found that the threading dislocation density increases with increasing compressive residual stress. Furthermore, the dislocation density and the residual stress decrease with increasing thickness of the GaN layers. The edge component of the threading dislocations was dominant in all samples. Still, some differences in the character of the dislocations were observed for different templates.

  8. Screw dislocations in GaN

    SciTech Connect

    Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack; O'Keefe, Michael A.

    2002-02-15

    GaN has received much attention over the past few years because of several new applications, including light emitting diodes, blue laser diodes and high-power microwave transistors. One of the biggest problems is a high density of structural defects, mostly dislocations, due to a lack of a suitable lattice-matched substrate since bulk GaN is difficult to grow in large sizes. Transmission Electron Microscopy (TEM) has been applied to study defects in plan-view and cross-sections on samples prepared by conventional techniques such as mechanical thinning and precision ion milling. The density of dislocations close to the sample surface of a 1 mm-thick HVPE sample was in the range of 3x109 cm-2. All three types of dislocations were present in these samples, and almost 50 percent were screw dislocations. Our studies suggest that the core structure of screw dislocations in the same material might differ when the material is grown by different methods.

  9. Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, Z. T.; Xu, K.; Guo, L. P.; Yang, Z. J.; Su, Y. Y.; Yang, X. L.; Pan, Y. B.; Shen, B.; Zhang, H.; Zhang, G. Y.

    2006-09-01

    Effect of long anneals on densities of different types of threading dislocations (TDs) in GaN films grown onto sapphire substrate by metal-organic chemical vapor deposition was investigated by high-resolution X-ray diffraction. The results showed that the densities of both types of TDs changed obviously but oppositely, and residual stress in the GaN films was relaxed by generating edge-type TDs instead of screw-type TDs. The results obtained from chemical etching experiments and grazing-incidence X-ray diffraction (GIXRD) also supported the proposed defect structure evolution.

  10. Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

    NASA Astrophysics Data System (ADS)

    Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu

    2016-04-01

    This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 104 cm-2 and 1.2 × 109 cm-2 by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel-Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

  11. Dislocation core structures in Si-doped GaN

    SciTech Connect

    Rhode, S. L. Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  12. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    PubMed

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2. PMID:26674458

  13. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer

    NASA Astrophysics Data System (ADS)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-01

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  14. Dislocation luminescence in GaN single crystals under nanoindentation

    NASA Astrophysics Data System (ADS)

    Huang, Jun; Xu, Ke; Fan, Ying Min; Wang, Jian Feng; Zhang, Ji Cai; Ren, Guo Qiang

    2014-12-01

    This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.

  15. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    SciTech Connect

    Takeuchi, S. Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

    2015-12-28

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  16. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    NASA Astrophysics Data System (ADS)

    Takeuchi, S.; Asazu, H.; Imanishi, M.; Nakamura, Y.; Imade, M.; Mori, Y.; Sakai, A.

    2015-12-01

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  17. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  18. Radiation enhanced basal plane dislocation glide in GaN

    NASA Astrophysics Data System (ADS)

    Yakimov, Eugene B.; Vergeles, Pavel S.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

    2016-05-01

    A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10 nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

  19. Structure and electronic properties of mixed (a + c) dislocation cores in GaN

    SciTech Connect

    Horton, M. K.; Rhode, S. L.; Moram, M. A.

    2014-08-14

    Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

  20. Charge Accumulation at a Threading Edge Dislocation in GaN

    SciTech Connect

    Leung, K.; Stechel, E.B.; Wright, A.F.

    1999-01-20

    We have performed Monte Carlo calculations to determine the charge accumulation on threading edge dislocations in GaN as a function of the dislocation density and background dopant density. Four possible core structures have been examined, each of which produces defect levels in the gap and may therefore act as electron or hole traps. Our results indicate that charge accumulation, and the resulting electrostatic interactions, can change the relative stabilities of the different core structures. Structures having Ga and N vacancies at the dislocation core are predicted to be stable under nitrogen-rich and gallium-rich growth conditions, respectively. Due to dopant depletion at high dislocation density and the multitude of charge states, the line charge exhibits complex crossover behavior as the dopant and dislocation densities vary.

  1. Low dislocation GaN via defect-filtering, self-assembled SiO2-sphere layers.

    SciTech Connect

    Wang, George T.; Li, Qiming

    2009-09-01

    The III-nitride (AlGaInN) materials system forms the foundation for white solid-state lighting, the adoption of which could significantly reduce U.S. energy needs. While the growth of GaN-based devices relies on heteroepitaxy on foreign substrates, the heteroepitaxial layers possess a high density of dislocations due to poor lattice and thermal expansion match. These high dislocation densities have been correlated with reduced internal quantum efficiency and lifetimes for GaN-based LEDs. Here, we demonstrate an inexpensive method for dislocation reduction in GaN grown on sapphire and silicon substrates. This technique, which requires no lithographic patterning, GaN is selectively grown through self-assembled layers of silica microspheres which act to filter out dislocations. Using this method, the threading dislocation density for GaN on sapphire was reduced from 3.3 x 10{sup 9} cm{sup -2} to 4.0 x 10{sup 7} cm{sup -2}, and from the 10{sup 10} cm{sup -2} range to {approx}6.0 x 10{sup 7} cm{sup -2} for GaN on Si(111). This large reduction in dislocation density is attributed to a dislocation blocking and bending by the unique interface between GaN and silica microspheres.

  2. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect

    Sintonen, Sakari Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri; Rudziński, Mariusz; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  3. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    NASA Astrophysics Data System (ADS)

    Sintonen, Sakari; Rudziński, Mariusz; Suihkonen, Sami; Jussila, Henri; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas; Tuomi, Turkka O.; Lipsanen, Harri

    2014-08-01

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  4. Movement of basal plane dislocations in GaN during electron beam irradiation

    SciTech Connect

    Yakimov, E. B.; Vergeles, P. S.; Polyakov, A. Y.; Lee, In-Hwan; Pearton, S. J.

    2015-03-30

    The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

  5. A Transmission Electron Microscopy Observation of Dislocations in GaN Grown on (0001) Sapphire by Metal Organic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Huang, Shih-Yao; Yang, Jer-Ren

    2008-10-01

    A transmission electron microscopy (TEM) observation of dislocations in GaN grown on (0001) sapphire by metal organic chemical vapor deposition (MOCVD) was carried out in this study. The GaN film was rotated 30° around the c-axis in the growth plane against the substrate. The finding of this research, according to TEM analysis, is that about 3% (or less) of the threading dislocations are pure screw (b = <0001 >) and 20% are pure edge (b = 1/3 <1120 >). The remaining threading dislocations, about 77%, are mixed-type dislocations; that is the major dislocation type in the GaN epitaxial layer grown on (0001) sapphire is the mixed type. In addition, to further understand the dislocation configuration on the interface of GaN/sapphire, a plane-view TEM sample of the GaN/sapphire interface was prepared. The plane-view TEM image of the GaN/sapphire interface reveals an extremely high density of kink dislocations lying on the interface, with a dislocation density of about 8×109 cm-2, involving high strain and stress. A comparison of the 8×109 cm-2 dislocation density with another plane-view TEM image (6×108 cm-2) near the GaN free surface revealed that approximately 7.5% of the dislocations lying on the substrate coalesce into threading dislocations generated from the interface to the GaN surface.

  6. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  7. Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

    NASA Astrophysics Data System (ADS)

    Sugawara, Yoshihiro; Ishikawa, Yukari; Watanabe, Arata; Miyoshi, Makoto; Egawa, Takashi

    2016-05-01

    Dislocations in a GaN layer grown on 4-in. Si(111) with AlGaN/AlN strained layer superlattices using a horizontal metal–organic chemical vapor deposition system were characterized by transmission electron microscopy and scanning transmission electron microscopy. Pure screw dislocations were not found in the observed area but mixed and edge dislocations were found. The dislocation density in the GaN layer decreased from the bottom (∼2 × 1010 cm‑2) to the top (∼6 × 109 cm‑2). Some dislocations were inclined from the c-axis, and half-loop dislocations were observed in the GaN layer. Plan-view weak-beam dark-field analysis indicated that the dislocation inclination was caused by climb and glide motions.

  8. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    NASA Astrophysics Data System (ADS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  9. Dislocation structures and mobilities in GaN from molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Weingarten, N.

    2013-03-01

    The deleterious electronic effects associated with the presence of misfit and threading dislocations have been a major problem hindering application of wide bandgap wurtzite semiconductors such as GaN. Due to the many possible mechanisms that contribute to dislocation formation, systematic approaches for their elimination have remained elusive. Phenomena related to dislocation glide and entanglement can be investigated using discrete dislocation dynamics simulations, however accurate mobility laws must first be determined. In this work, results are presented from molecular dynamics simulations performed to calculate dislocation velocities in GaN as a function of applied stress and temperature. The structure of dislocation cores for a number of slip systems is presented, and comparisons are made between dislocations in the basal, prismatic, and pyramidal planes. The mechanisms driving dislocation motion are presented for various slip systems, as well as for both edge and screw dislocations. Finally, we discuss the development of mobility laws for GaN based on our atomistic results.

  10. The generation of misfit dislocations in facet-controlled growth of AlGaN /GaN films

    NASA Astrophysics Data System (ADS)

    Cherns, D.; Sahonta, S.-L.; Liu, R.; Ponce, F. A.; Amano, H.; Akasaki, I.

    2004-11-01

    The relaxation of tensile stresses in AlGaN layers grown on GaN /(0001)sapphire by facet-controlled epitaxial lateral overgrowth is reported. It is shown that a-type misfit dislocations are introduced at inclined {112¯2} AlGaN /GaN interfaces, with strong evidence for a half-loop nucleation and glide mechanism driven by shear stresses present on the (0001) slip plane. In addition to relieving misfit stresses, these dislocations introduce grain rotations of up to 10-2rad across the AlGaN /GaN boundaries, leading to tilt boundaries at the meeting front between laterally growing wings and between regions growing in the lateral and [0001] directions. The effects of these processes on the defect density in subsequent layers are examined.

  11. Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

    NASA Astrophysics Data System (ADS)

    Ishikawa, Hiroyasu; Shimanaka, Keita

    2011-01-01

    We report a novel growth technique of GaN films on Si substrates using a metalorganic chemical vapor deposition. First, Ga droplets are deposited on a Si substrate by feeding trimethylgallium. And then the substrate is heated at 1080 °C, resulting in the formation of recesses on its surface by meltback etching. Finally, a GaN film is grown on the Ga-induced meltback-etched surface using a high-temperature-grown AlN intermediate layer. After the growth of the GaN film, 0.5-1-μm-diameter pits were observed on the GaN surface. A cathodoluminescence image reveals that low-threading-dislocation-density regions were successfully grown around the pits.

  12. Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern

    NASA Astrophysics Data System (ADS)

    Okuno, Koji; Oshio, Takahide; Shibata, Naoki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi

    2013-08-01

    A sapphire substrate with a grooved stripe pattern along different radial directions was prepared to investigate the effects of stripe direction on the growth mode and threading dislocation (TD) behavior of GaN films. When the stripe direction is oriented parallel to [10bar 10]sapphire, the GaN films have a triangular structure that is formed by the GaN{10bar 11} facets. As the stripe direction rotates from [10bar 10]sapphire, nanosteps with a step height of around 80 nm are formed on the GaN{10bar 11} facets and then the coalescence of GaN on the ridges and grooves advances. GaN films with a smooth surface and a TD density as low as 2.0×108 cm-2 were achieved when the stripe direction was rotated 3° from [10bar 10]sapphire. Our result indicates that the surface roughness and TD density of GaN films can be controlled by precisely adjusting the angle of the stripe direction from [10bar 10]sapphire.

  13. Mass transport, faceting and behavior of dislocations in GaN

    SciTech Connect

    Nitta, S.; Kashima, T.; Kariya, M.; Yukawa, Y.; Yamaguchi, S.; Amano, H.; Akasaki, I.

    2000-07-01

    The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

  14. Threading dislocation reduction in a GaN film with a buffer layer grown at an intermediate temperature

    NASA Astrophysics Data System (ADS)

    Cho, Youngji; Chang, Jiho; Ha, Joonseok; Lee, Hyun-jae; Fujii, Katsushi; Yao, Takafumi; Lee, Woong; Sekiguchi, Takashi; Yang, Jun-Mo; Yoo, Jungho

    2015-01-01

    Remarkable reduction of the threading dislocation (TD) density has been achieved by inserting a GaN layer grown at an intermediate temperature (900 °C) (IT-GaN layer), just prior to the growth of GaN at 1040 °C by using a hydride vapor phase epitaxy. The variation in the dislocation density variation along the growth direction was observed by using cathodoluminescence (CL) and transmission electron microscopy (TEM). A cross-sectional CL image revealed that the reduction of the TD density happened during the growth of IT-GaN layer. The TEM measurement provided the proof that the TD reduction could be ascribed to the masking of the TD by stacking faults in the IT-GaN layer.

  15. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

    NASA Astrophysics Data System (ADS)

    Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Suvarna, Puneet; Redwing, Joan M.; (Shadi) Shahedipour-Sandvik, F.

    2013-04-01

    The changes that the AlN buffer and Si substrate undergo at each stage of our substrate engineering process, previously shown to lead to a simultaneous and substantial reduction in film crack density and dislocation density in overgrown GaN, are presented. Evidence of ion-implantation assisted grain reorientation for AlN islands coupled with physical isolation from the bulk Si substrate prove to be the dominating driving forces. This is further emphasized with x-ray diffraction analysis that demonstrates a reduction in the in-plane lattice constant of AlN from 3.148 Å to 3.113 Å and a relative change in rotation of AlN islands by 0.135° with regard to the Si substrate after substrate engineering. Misfit dislocations at the AlN-Si interface and disorder that is normally associated with formation of amorphous SiNx at this interface are considered to be two of the major contributors to dislocation nucleation within overgrown GaN. Following our technique, the disappearance of disorder at the AlN-Si interface is observed. Extensive ellipsometry and transmission electron microscopy suggests that larger AlN islands with a smoother surface morphology could further reduce the dislocation density below that previously reported. A 1.2 μm GaN layer deposited on an AlN buffer with larger islands and smoother morphology exhibits a 14× reduction in surface pit density after undergoing the ion-implantation assisted substrate modification technique.

  16. Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Liu, Peichi; Jackson, Biyun; Sun, Tianshu; Huang, Shyh-Jer; Hsu, Hsiao-Chiu; Su, Yan-Kuin; Chang, Shoou-Jinn; Li, Lei; Li, Ding; Wang, Lei; Hu, XiaoDong; Xie, Y. H.

    2013-04-01

    A novel serpentine channel structure is used to mask the sapphire substrate for the epitaxial growth of dislocation-free GaN. Compared to the existing epitaxial lateral overgrowth methods, the main advantages of this novel technique are: (a) one-step epitaxial growth; (b) up to 4 times wider defect-free regions; and (c) the as-grown GaN film can be transferred easily to any type of substrate. TEM, etch pits and cathodoluminescence experiments are conducted to characterize the quality of as-grown GaN. The results show that the average etch-pit density in the yet-to-be-optimized GaN epi-layers is about 4 × 105 cm-2. The underlying physics of selective nucleation and growth is investigated using the finite element method (COMSOL). It is concluded that the proximity effect dominates the selective growth of GaN on the serpentine channel structure masked sapphire. This novel technique is a promising candidate for the growth of high quality III-nitride and the subsequent high-performance device fabrication including high brightness LED, laser diodes, and high-power, high-efficiency transistors.

  17. Depth dependence of defect density and stress in GaN grown on SiC

    NASA Astrophysics Data System (ADS)

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-01

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29to30μm. High level of residual elastic strain was found in thin (0.29to0.73μm thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2×107cm-2, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  18. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  19. Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

    SciTech Connect

    Bai, J.; Wang, T.; Parbrook, P. J.; Wang, Q.; Lee, K. B.; Cullis, A. G.

    2007-09-24

    A significant dislocation reduction is achieved in an AlGaN layer grown on an AlN buffer by introducing a thin GaN interlayer. The mechanisms for the dislocation reduction are explored by transmission electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, and micro-Raman spectroscopy. The GaN interlayer grown on the AlN takes the form of platelets. The mechanisms of dislocation reduction in the platelet area and the area between the platelets are different. In the GaN platelets, due to the large misfit strain, the threading dislocations (TDs) in the AlN layer migrate into the interface and annihilate with each other. However, the GaN between the platelets is highly strained so that a higher density of TDs from AlN is incorporated into the upper layer. The coalescing of the platelets induced by the AlGaN growth makes the TDs in the areas between the platelets assemble and annihilate, resulting in additional dislocation reduction.

  20. Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

    PubMed

    Ji, Qingbin; Li, Lei; Zhang, Wei; Wang, Jia; Liu, Peichi; Xie, Yahong; Yan, Tongxing; Yang, Wei; Chen, Weihua; Hu, Xiaodong

    2016-08-24

    The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long unsolved problem, which hinders further applications of defect-sensitive GaN-based devices. Multiple-modulation of epitaxial lateral overgrowth (ELOG) is used to achieve high-quality GaN template on a novel serpentine channel patterned sapphire substrate (SCPSS). The dislocation blocking brought by the serpentine channel patterned mask, coupled with repeated dislocation bending, can reduce the dislocation density to a yet-to-be-optimized level of ∼2 × 10(5) to 2 × 10(6) cm(-2). About 80% area utilization rate of GaN with low TDD and stress relaxation is obtained. The periodical variations of dislocation density, optical properties and residual stress in GaN-based epilayers on SCPSS are analyzed. The quantum efficiency of InGaN/GaN multiple quantum wells (MQWs) on it can be increased by 52% compared with the conventional sapphire substrate. The reduced nonradiative recombination centers, the enhanced carrier localization, and the suppressed quantum confined Stark effect, are the main determinants of improved luminous performance in MQWs on SCPSS. This developed ELOG on serpentine shaped mask needs no interruption and regrowth, which can be a promising candidate for the heteroepitaxy of semipolar/nonpolar GaN and GaAs with high quality. PMID:27484167

  1. Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Sugawara, Yoshihiro; Ishikawa, Yukari; Watanabe, Arata; Miyoshi, Makoto; Egawa, Takashi

    2016-04-01

    The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

  2. Method of growing GaN films with a low density of structural defects using an interlayer

    DOEpatents

    Bourret-Courchesne, Edith D.

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  3. Clustered quantum dots in single GaN islands formed at threading dislocations

    NASA Astrophysics Data System (ADS)

    Schmidt, Gordon; Veit, Peter; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

    2016-05-01

    We give direct evidence of distinct quantum dot states clustered but also spatially separated in single GaN islands. Resulting from GaN layer growth on top of AlN, the islands are predominantly formed in close vicinity to threading dislocation bundles. Detailed analysis of the inner optical and structural properties, performed by nanoscale cathodoluminescence, reveals various sharp quantum dot emission lines from different regions in an otherwise continuous island. Thickness fluctuations found within these islands are made responsible for the clustering of quantum dot states.

  4. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, R.I.; Ice, G.E.; Liu, W.; Einfeldt, S.; Hommel, D.; Roskowski, A.M.; Davis, R.F.

    2010-06-25

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  5. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, Rozaliya; Ice, Gene E; Liu, Wenjun; Einfeldt, S.; Hommel, D.; Roskowski, A. M.; Davis, R. F.

    2005-01-01

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  6. Screw dislocations in GaN grown by different methods

    SciTech Connect

    Liliental-Weber, Z.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Morkoc, H.

    2003-05-27

    A study of screw dislocations in Hydride-Vapor-Phase-Epitaxy (HVPE) template and Molecular-Beam-Epitaxy (MBE) over-layers was performed using Transmission Electron Microscopy (TEM) in plan-view and in cross-section. It was observed that screw dislocations in the HVPE layers were decorated by small voids arranged along the screw axis. However, no voids were observed along screw dislocations in MBE overlayers. This was true both for MBE samples grown under Ga-lean and Ga-rich conditions. Dislocation core structures have been studied in these samples in the plan-view configuration. These experiments were supported by image simulation using the most recent models. A direct reconstruction of the phase and amplitude of the scattered electron wave from a focal series of high-resolution images was applied. It was shown that the core structures of screw dislocations in the studied materials were filled. The filed dislocation cores in an MBE samples were stoichiometric. However, in HVPE materials, single atomic columns show substantial differences in intensities and might indicate the possibility of higher Ga concentration in the core than in the matrix. A much lower intensity of the atomic column at the tip of the void was observed. This might suggest presence of lighter elements, such as oxygen, responsible for their formation.

  7. Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

    SciTech Connect

    Kuan, T.S.; Inoki, C.K.; Hsu, Y.; Harris, D.L.; Zhang, R.; Gu, S.; Kuech, T.F.

    2000-07-01

    The authors have carried out a series of lateral epitaxial overgrowths (LEO) of GaN through thin oxide windows by the hydride vapor phase epitaxy (HVPE) technique at different growth temperatures. High lateral growth rate at 1,100 C allows coalescing of neighboring islands into a continuous and flat film, while the lower lateral growth rate at 1,050 C produces triangular-shaped ridges over the growth windows. In either case, threading dislocations bend into laterally grown regions to relax the shear stress developed in the film during growth. In regions close to the mask edge, where the shear stress is highest, dislocations interact and multiply into arrays of edge dislocations lying parallel to the growth window. This multiplication and pileup of dislocations cause a large-angle tilting of the laterally grown regions. The tilt angle is high ({approximately}8 degrees) when the growth is at 1,050 C and becomes smaller (3--5 degrees) at 1,100 C. At the coalescence of growth facets, a tilt-type grain boundary is formed. During the high-temperature lateral growth, the tensile stress in the GaN seed layer and the thermal stress from the mask layer both contribute to a high shear stress at the growth facets. Finite element stress simulations suggest that this shear stress may be sufficient to cause the observed excessive dislocation activities and tilting of LEO regions at high growth temperatures.

  8. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

    NASA Astrophysics Data System (ADS)

    Kim, Y. H.; Ruh, H.; Noh, Y. K.; Kim, M. D.; Oh, J. E.

    2010-03-01

    The microstructural properties of a GaN layer grown on a patterned sapphire substrate (PSS) were studied in detail using transmission electron microscope techniques to determine dislocation and growth behaviors. Regular and uniform recrystallized GaN islands were observed on the protruding pattern. On a flat sapphire surface, the crystallographic orientation relationship of ⟨1¯21¯0⟩GaN on FS//⟨11¯00⟩sapphire and {11¯01}GaN on FS//{12¯13}sapphire existed between the GaN and the substrate. On the other hand, the orientation relationship of ⟨1¯21¯0⟩GaN layer//⟨1¯21¯0⟩GaN island on IS//⟨11¯00⟩sapphire and {11¯01}GaN layer//{0002}GaN island on IS//{12¯13}sapphire was confirmed among the GaN layer, the recrystallized GaN islands on an inclined sapphire surface and the PSS. The flat surface among the protruding patterns began to fill rapidly with GaN. Then, the GaN gradually overgrew the protruding pattern and coalesced near the summit as the growth time increased. The generation of threading dislocations was observed in the vicinity of the coalescence points near the top of the protruding patterns.

  9. Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns.

    PubMed

    Kishino, Katsumi; Ishizawa, Shunsuke

    2015-06-01

    The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm on Si (111) substrates was demonstrated. The employment of GaN film templates with flat surfaces (root mean square surface roughness of 0.84 nm), which were obtained using an AlN/GaN superlattice (SL) buffer on Si, contributed to the high-quality selective-area growth of nanocolumns using a thin Ti mask of 5 nm thickness by rf-plasma-assisted molecular beam epitaxy. Although the GaN template included a large number of dislocations (dislocation density ∼10(11) cm(-2)), the dislocation filtering effect of nanocolumns was enhanced with decreasing nanocolumn diameters (D). Systematic transmission electron microscopy (TEM) observation enabled us to explain the dependence of the dislocation propagation behavior in nanocolumns on the nanocolumn diameter for the first time. Plan-view TEM analysis was performed for nanocolumns with D = 120-324 nm by slicing the nanocolumns horizontally at a height of ∼300 nm above their bottoms and dislocation propagation through the nanocolumns was analyzed by the cross-sectional TEM observation of nanocolumns with D ∼ 200 nm. It was clarified that dislocations were effectively filtered in the bottom 300 nm region of the nanocolumns, the dislocation density of the nanocolumns decreased with decreasing D, and for narrow nanocolumns with D < 200 nm, dislocation-free crystals were obtained in the upper part of the nanocolumns. The dramatic improvement in the emission properties of GaN nanocolumns observed with decreasing diameter is discussed in relation to the decreased dislocation density. The laser action of InGaN/GaN-based nanocolumn arrays with a nanocolumn diameter of 170 nm and a period of 200 nm on Si under optical excitation was obtained with an emission wavelength of 407 nm. We also fabricated red-emitting InGaN-based nanocolumn light-emitting diodes on Si that operated at a wavelength of 652 nm, demonstrating vertical conduction

  10. High dislocation density of tin induced by electric current

    SciTech Connect

    Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

    2015-12-15

    A dislocation density of as high as 10{sup 17} /m{sup 2} in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10{sup 3} A/ cm{sup 2}. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining.

  11. Determination of the inhomogeneous dislocation density in a crystallographic texture

    SciTech Connect

    Satdarova, F. F.; Kozlov, D. A.

    2007-03-15

    Diffraction analysis of the mixed dislocation structure of a polycrystal with an orthorhombic texture is reported. A significant difference in the dislocation densities in the texture components of cold-deformed low-carbon steel has been revealed.

  12. Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

    NASA Astrophysics Data System (ADS)

    Kaganer, Vladimir M.; Jenichen, Bernd; Ramsteiner, Manfred; Jahn, Uwe; Hauswald, Christian; Grosse, Frank; Fernández-Garrido, Sergio; Brandt, Oliver

    2015-09-01

    Experimental x-ray diffraction, Raman, and photoluminescence line profiles from GaN films with different densities of threading dislocations are modeled using Monte Carlo calculations of the strain distribution due to these dislocations. We quantitatively analyze and compare the respective line broadenings predicted by these calculations for different dislocation densities. X-ray diffraction and Raman measurements reveal the strain in the whole volume of the film, due to the large penetration depth of the corresponding radiation, while photoluminescence measurements are sensitive to the strain close to the film surface, in a layer limited by the penetration depth of the radiation used for excitation. This difference in information depths becomes especially important for films in which the threading dislocation density is continuously decreasing during growth, as it can be achieved by vapor phase epitaxy methods. An additional narrowing of photoluminescence lines occurs due to two effects: first, the elastic relaxation of the dislocation strain at the free surface, and second, the suppression of luminescence from the most highly strained regions around the dislocation cores which act as centers of nonradiative recombination.

  13. Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth

    NASA Astrophysics Data System (ADS)

    Imanishi, Masayuki; Todoroki, Yuma; Murakami, Kosuke; Matsuo, Daisuke; Imabayashi, Hiroki; Takazawa, Hideo; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2015-10-01

    In our study, we found that threading dislocation density (TDD) in GaN crystals naturally reduced from ~109 cm-2 in a seed to less than ~103 cm-2, just by using the small-sized seed called a "point seed". However, the mechanism of the dramatic reduction was unclear. In order to reveal the mechanism of this substantial reduction of TDD, we investigated the relationship between TDD and the crystal habit during the growth. Cathodoluminescence (CL) and scanning electron microscopy (SEM) images showed that TDD was dramatically reduced after the c face became small (<50×50 μm2) in the habit-change process caused by changes of supersaturation during growth, in which bunched steps growing from the edge of the c face coalesced at the center. It is thought that the shrinking of the c face in the growth process enabled the coalescence of bunched steps, which led to the gathering of threading dislocations (TDs), and resulted in the dramatic reduction of TDD. We concluded that the natural reduction of TDs was caused by coalescence of bunched steps, which easily occurs in during the Na-flux growth on small-sized "point seeds", and which allowed fabrication of low-dislocation-density GaN wafers.

  14. X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Kopp, Viktor S. Kaganer, Vladimir M.; Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A.; Cherkashin, Nikolay

    2014-02-21

    Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

  15. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

    SciTech Connect

    Chatterjee, Abhishek Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-01-12

    GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

  16. Method to reduce dislocation density in silicon using stress

    DOEpatents

    Buonassisi, Anthony; Bertoni, Mariana; Argon, Ali; Castellanos, Sergio; Fecych, Alexandria; Powell, Douglas; Vogl, Michelle

    2013-03-05

    A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.

  17. Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

    NASA Astrophysics Data System (ADS)

    Liu, W.; Carlin, J.-F.; Grandjean, N.; Deveaud, B.; Jacopin, G.

    2016-07-01

    We investigate the dynamics of donor bound excitons (D°XA) at T = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ˜ 1.3 meV dipole-like energy shift of D°XA is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ˜24 nm as well as an effective area of the dislocation with a radius of ˜95 nm, where the recombination can be regarded as entirely non-radiative.

  18. Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

    NASA Astrophysics Data System (ADS)

    Amma, Shin-ichi; Tokumoto, Yuki; Edagawa, Keiichi; Shibata, Naoya; Mizoguchi, Teruyasu; Yamamoto, Takahisa; Ikuhara, Yuichi

    2010-05-01

    Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

  19. Estimating Geometric Dislocation Densities in Polycrystalline Materialsfrom Orientation Imaging Microscopy

    SciTech Connect

    Man, Chi-Sing; Gao, Xiang; Godefroy, Scott; Kenik, Edward A

    2010-01-01

    Herein we consider polycrystalline materials which can be taken as statistically homogeneous and whose grains can be adequately modeled as rigid-plastic. Our objective is to obtain, from orientation imaging microscopy (OIM), estimates of geometrically necessary dislocation (GND) densities.

  20. Investigations of atomic configurations of 60° basal dislocations in wurtzite GaN film by high-resolution transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Chang, Yunjie; Wang, Yumei; Deng, Zhen; Chen, Hong; Ge, Binghui

    2016-04-01

    GaN epitaxial films grown on Si (111) substrates were observed using a 200 kV high-resolution (HR) transmission electron microscope. Both perfect and dissociated 60° basal dislocations were found in ? HR images. By utilizing the image deconvolution method, the HR images were transformed into structure maps with an improved resolution, and then the atomic configurations of perfect and partial dislocations were determined. Afterwards, the possible dissociation schemes for the dissociated dislocations were derived.

  1. Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

    SciTech Connect

    Hsu, J. W. P.; Manfra, M. J.; Chu, S. N. G.; Chen, C. H.; Pfeiffer, L. N.; Molnar, R. J.

    2001-06-18

    The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. {copyright} 2001 American Institute of Physics.

  2. Evaluation of threading dislocation densities in In- and N-face InN

    SciTech Connect

    Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

    2010-03-15

    The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 {mu}m had higher TD densities compared with films grown thicker than 1 {mu}m. The lowest measured TD density for an In-face InN film was {approx}1.5x10{sup 10}/cm{sup 2} for 1 {mu}m thick films.

  3. Reactivity of pyrites and dislocation density

    SciTech Connect

    Pollack, S.S.; Martello, D.V.; Diehl, J.R.; Tamilia, J.V. ); Graham, R.A. )

    1991-01-01

    Highly reactive coal pyrites and unstable museum specimens are easily distinguished from the stable pyrites by the growth of white crystals that cover samples exposed to room atmosphere for short periods of time. Continued exposure to the atmosphere will eventually cause the specimens to fall apart. The term rotten pyrite has been applied to museum specimens that fall apart in this way. SEM studies show that reactive (rotten) pyrites contain between 100 and 10,000 times more dislocations than stable pyrites. Shock-loading of a stable pyrite to 7.5 GPa and 17 GPa increased its reactivity by a factor of two, probably caused by an increase in the number of imperfections. However, shock-loading at 22 GPa decreased the reactivity of pyrite because the imperfections produced at the higher pressure were removed during annealing the sample received at the higher temperature. Although there was a factor of six difference between the most and least reactive shocked MCB (commercial pyrite) samples, shock-loading did not increase the reactivity of the MCB pyrite to that of the Queensland coal pyrite. The results in hand show that while shock-loading produces sufficient imperfections to increase the reactivity of pyrites, there is insufficient data to show that imperfections are the main reason why some coal pyrites are highly reactive. 9 refs., 1 fig., 1 tab.

  4. Single crystal plasticity by modeling dislocation density rate behavior

    SciTech Connect

    Hansen, Benjamin L; Bronkhorst, Curt; Beyerlein, Irene; Cerreta, E. K.; Dennis-Koller, Darcie

    2010-12-23

    The goal of this work is to formulate a constitutive model for the deformation of metals over a wide range of strain rates. Damage and failure of materials frequently occurs at a variety of deformation rates within the same sample. The present state of the art in single crystal constitutive models relies on thermally-activated models which are believed to become less reliable for problems exceeding strain rates of 10{sup 4} s{sup -1}. This talk presents work in which we extend the applicability of the single crystal model to the strain rate region where dislocation drag is believed to dominate. The elastic model includes effects from volumetric change and pressure sensitive moduli. The plastic model transitions from the low-rate thermally-activated regime to the high-rate drag dominated regime. The direct use of dislocation density as a state parameter gives a measurable physical mechanism to strain hardening. Dislocation densities are separated according to type and given a systematic set of interactions rates adaptable by type. The form of the constitutive model is motivated by previously published dislocation dynamics work which articulated important behaviors unique to high-rate response in fcc systems. The proposed material model incorporates thermal coupling. The hardening model tracks the varying dislocation population with respect to each slip plane and computes the slip resistance based on those values. Comparisons can be made between the responses of single crystals and polycrystals at a variety of strain rates. The material model is fit to copper.

  5. Edge Stabilized Ribbon (ESR); Stress, Dislocation Density and Electronic Performance

    NASA Technical Reports Server (NTRS)

    Sachs, E. M.

    1984-01-01

    The edge stabilized ribbon (ESR) silicon ribbon was grown in widths of 1, 2.2 and 4.0 inches at speeds ranging from .6 to 7 in/min, which result in ribbon thicknesses of 5 to 400 microns. One of the primary problems remaining in ESR growth is that of thermally induced mechanical stresses. This problem is manifested as ribbon with a high degree of residual stress or as ribbon with buckled ribbon. Thermal stresses result in a high dislocation density in the grown material, resulting in compromised electronic performance. Improvements in ribbon flatness were accomplished by modification of the ribbon cooling profile. Ribbon flatness and other experimental observations of ESR ribbon are discussed. Laser scanner measurements show a good correlation between diffusion length and dislocation density which indicates that the high dislocation densities are the primary cause of the poor current performance of ESR materials. Dislocation densities were reduced and improved electronic performance resulted. Laser scanner data on new and old material are presented.

  6. Core structures analyses of (a+c)-edge dislocations in wurtzite GaN through atomistic simulations and Peierls–Nabarro model

    SciTech Connect

    Chen, Cheng; Meng, Fanchao; Song, Jun

    2015-05-21

    The core structures and slip characteristics of (a+c)-edge dislocations on pyramidal planes in wurtzite GaN were investigated employing molecular dynamics simulations. Multiple stable core configurations are identified for dislocations along the glide and shuffle planes. The corresponding generalized-stacking-fault energy (GSFE) curves for the glide and shuffle slips are calculated. The GSFE curves, combined with the Peierls–Nabarro model, demonstrate that the shuffle slip is favored over the glide slip given the markedly lower Peierls energy and stress of the shuffle slip. Our findings also indicate that in general slip motions for (a+c)-edge dislocations are only possible at elevated temperature, and the necessity of further studies of thermally activated processes to better understand the dynamics of (a+c) dislocations in GaN.

  7. Dislocation

    MedlinePlus

    Joint dislocation ... It may be hard to tell a dislocated joint from a broken bone . Both are emergencies. You ... to repair a ligament that tears when the joint is dislocated is needed. Injuries to nerves and ...

  8. Density Functional Theory for Green Chemical Catalyst Supported on S-Terminated GaN(0001)

    NASA Astrophysics Data System (ADS)

    Yokoyama, Mami; Tsukamoto, Shiro; Ishii, Akira

    2011-12-01

    A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on S-terminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S on the case of GaN substrate is to make the number of the valence electron to be close to 0, it happened same way for GaAs substrate.

  9. Dislocations

    MedlinePlus

    Dislocations are joint injuries that force the ends of your bones out of position. The cause is often a fall or a blow, sometimes from playing a contact sport. You can dislocate your ankles, knees, shoulders, hips, elbows and jaw. You can also dislocate your finger and toe joints. Dislocated joints often are ...

  10. Identifying dislocations and stacking faults in GaN films by scanning transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Su, X. J.; Niu, M. T.; Zeng, X. H.; Huang, J.; Zhang, J. C.; Zhang, J. P.; Wang, J. F.; Xu, K.

    2016-08-01

    The application of annular bright field (ABF) and medium-angle annular dark field (MAADF) scanning transmission electron microscopy (STEM) imaging to crystalline defect analysis has been extended to dislocations and stacking faults (SFs). Dislocations and SFs have been imaged under zone-axis and two-beam diffraction conditions. Comparing to conventional two-beam diffraction contrast images, the ABF and MAADF images of dislocations and SFs not only are complementary and symmetrical with their peaks at dislocation core and SFs plane, but also show similar extinction phenomenon. It is demonstrated that conventional TEM rules for diffraction contrast, i.e. g · b and g · R invisibility criteria remain applicable. The contrast mechanism and extinction of dislocation and SFs in ABF and MAADF STEM are illuminated by zero-order Laue zone Kikuchi diffraction.

  11. Dislocation density evolution during high pressure torsion of a nanocrystalline Ni-Fe alloy

    SciTech Connect

    Li, Hongqi; Wang, Y B; Ho, J C; Cao, Y; Liao, X Z; Ringer, S P; Zhu, Y T; Zhao, Y H; Lavernia, E J

    2009-01-01

    High-pressure torsion (HPT) induced dislocation density evolution in a nanocrystalline Ni-20wt.%Fe alloy was investigated using X-ray diffraction and transmission electron microscopy. Results suggest that the dislocation density evolution is different from that in coarse-grained materials. An HPT process first reduces the dislocation density within nanocrystalline grains and produces a large number of dislocations located at small-angle sub grain boundaries that are formed via grain rotation and coalescence. Continuing the deformation process eliminates the sub grain boundaries but significantly increases the dislocation density in grains. This phenomenon provides an explanation of the mechanical behavior of some nanostructured materials.

  12. Kinetic Monte Carlo and density functional study of hydrogen enhanced dislocation glide in silicon

    NASA Astrophysics Data System (ADS)

    Scarle, S.; Ewels, C. P.

    2006-05-01

    We investigate Hydrogen Enhanced Dislocation Glide [HEDG], using n-fold way Kinetic Monte Carlo simulations of the interaction between hydrogen and 90° partial dislocations in silicon, and a range of new density functional calculations. We examine two different hydrogen arrival species, as well as hydrogen recombination at the dislocation. The Monte Carlo simulations use a line-wise description of the dislocation line parameterized using density functional calculations of migration and formation energies of various dislocation line defects and their complexes with hydrogen. From this we suggest that the rate of H2 expulsion from the dislocation core increases as we approach HEDG, but that if the concentration of the hydrogen species goes beyond that required for HEDG it then slows dislocation motion by choking the line with defects comprised of two hydrogen atoms in a reconstruction bond. A `dislocation engine' model is proposed whereby hydrogen enters the dislocation line, catalyses motion, and is expelled along the core as H2.

  13. Relationship of dislocation density of silicon to solar cell current loss at low temperature

    NASA Technical Reports Server (NTRS)

    Mandelkorn, J.; Baraona, C. R.; Lamneck, J. H., Jr.

    1972-01-01

    Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. Solar cells were made by the same processes from a variety of silicon materials, namely low-dislocation-density, high-dislocation-density float-zone, and Czochralski silicon. All cells were etched in a manner which revealed the dislocation density of the cell bulk silicon. It was found that every cell made from any of the various low-dislocation starting materials obtained from three suppliers still had a low-dislocation bulk after cell processing, and that all such cells belonged to category good. Cells made from float-zone materials showed high dislocation densities in their bulk and either fell into category poor, or had intermediate losses of short-circuit current at low temperature.

  14. Design rules for dislocation filters

    SciTech Connect

    Ward, T.; Sánchez, A. M.; Beanland, R.; Tang, M.; Wu, J.; Liu, H.; Dunstan, D. J.

    2014-08-14

    The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si{sub 1−x}Ge{sub x}, and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approximately 40 nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approximately 10{sup 4}–10{sup 5 }cm{sup −2}.

  15. Modeling the effect of grain size and dislocation density on hysteretic magnetic properties in steels

    NASA Astrophysics Data System (ADS)

    Sablik, M. J.

    2001-05-01

    In this article, the Jiles-Atherton model is modified to elucidate the variation of magnetic properties with grain size and dislocation density. The modified model predicts generally that coercive field increases with increasing dislocation density and inverse grain size and that remanent flux density and permeability at the coercive field decrease with increasing dislocation density and inverse grain size. Using the same model, it should be possible to model the effects of grain size and dislocation density on other magnetic measurements such as nonlinear harmonics of the flux density or Barkhausen noise.

  16. Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

    PubMed Central

    2014-01-01

    With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN. PMID:25136276

  17. Reduction of Dislocation Density by Producing Novel Structures

    NASA Astrophysics Data System (ADS)

    Stoltz, A. J.; Benson, J. D.; Jacobs, R.; Smith, P.; Almeida, L. A.; Carmody, M.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Chen, Y.

    2012-10-01

    HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternate inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale HgCdTe detector production. Growth of HgCdTe on these alternate substrates has its own difficulty, namely large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In this work, a novel structure was developed that allows for etch pit density of less than 4 × 105/cm2 for HgCdTe-on-Si. This is almost two orders of magnitude less than the as-grown etch pit density of 1.1 × 107/cm2. This value of 3.35 × 105/cm2 is below the <1 × 106/cm2 or even the better <5 × 105/cm2 target for this research, making HgCdTe-on- alternate substrate density much more like that of HgCdTe-on-CdZnTe.

  18. Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

    DOEpatents

    Wang, George T.; Li, Qiming

    2013-04-23

    A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

  19. Dislocation densities and lengths in solid 4He from elasticity measurements

    NASA Astrophysics Data System (ADS)

    Haziot, Ariel; Fefferman, Andrew D.; Beamish, John R.; Balibar, Sébastien

    2013-02-01

    Measurements on solid 4He show large softening of the shear modulus due to dislocations, behavior which has been described as giant plasticity. Dislocation networks may also be responsible for the unusual behavior seen in torsional oscillator and flow experiments. However, previous estimates of dislocation densities vary by many orders of magnitude, even in single crystals grown under similar conditions. By measuring the temperature and frequency dependencies of the elastic dissipation, we have determined dislocation densities and network lengths in 4He single crystals, both in coexistence with liquid and at higher pressures, and in polycrystals grown at constant density. In all cases, dislocation lengths are much longer and the networks are less connected than previous estimates. Even in polycrystals, the dislocation network is far too sparse to explain the torsional oscillator results in terms of superfluidity in a dislocation network.

  20. Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

    SciTech Connect

    Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Molnar, R.J.

    2001-04-18

    Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

  1. Evaluation of Dislocation Density of SiGe-on-Insulator Substrates using Enhanced Secco Etching Method

    NASA Astrophysics Data System (ADS)

    Sugiyama, Naoharu; Moriyama, Yoshihiko; Tezuka, Tsutomu; Mizuno, Tomohisa; Nakaharai, Shu; Usuda, Koji; Takagi, Sin-ichi

    2003-07-01

    The dislocation density in thin SiGe on Insulator layers is evaluated, for the first time, by the enhanced secco etching method. It is found that the dislocation density in SGOI layers formed by the Ge condensation method is 6× 103 cm-2. It has also been confirmed that the different types of defects are observed by the HF defect detection method. In addition, the origin of dislocations is discussed by the diagnosis of the variation of dislocation densities during the process steps in the Ge condensation technique.

  2. Dislocation

    MedlinePlus

    ... likely to happen again. Follow-up with an orthopedic surgeon is recommended after a dislocation. ... SE, Mehta A, Maddow C, Luber SD. Critical orthopedic skills and procedures. Emergency Medicine Clinics of North ...

  3. A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

    NASA Astrophysics Data System (ADS)

    Li, Zhongda; Chow, T. Paul

    2013-08-01

    We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

  4. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    SciTech Connect

    Bajaj, Sanyam Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  5. Depth profile characterization technique for electron density in GaN films by infrared reflectance spectroscopy

    NASA Astrophysics Data System (ADS)

    Kamijoh, Takaaki; Ma, Bei; Morita, Ken; Ishitani, Yoshihiro

    2016-05-01

    Infrared reflectance spectroscopy is a noncontact measurement method for carrier density and mobility. In this article, the model determination procedure of layer-type nonuniform electron distribution is investigated, since the spectrum fitting hitherto has been conducted on the basis of a multilayer model defined in advance. A simplified case of a high-electron-density GaN layer embedded in a GaN matrix is mainly studied. The following procedure is found to be applicable. The first step is the determination of the high-density layer position in the vicinity of the surface, in the middle region, or in the vicinity of the interface. This is followed by the specification of the sheet electron density and the layer thickness of the high-density region. It is found that this procedure is also applicable to the characterization of two-dimensional electron gases in the vicinity of AlGaN/GaN heterointerfaces.

  6. Dislocations

    MedlinePlus

    ... Attempting to move or jam a dislocated bone back in can damage blood vessels, muscles, ligaments, and nerves. Apply an ice pack. Ice can ease swelling and pain in and around the joint. Use ibuprofen or acetaminophen for pain. Think Prevention! Make sure kids wear the appropriate safety gear ...

  7. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop

  8. Size dependence of yield strength simulated by a dislocation-density function dynamics approach

    NASA Astrophysics Data System (ADS)

    Leung, P. S. S.; Leung, H. S.; Cheng, B.; Ngan, A. H. W.

    2015-04-01

    The size dependence of the strength of nano- and micron-sized crystals is studied using a new simulation approach in which the dynamics of the density functions of dislocations are modeled. Since any quantity of dislocations can be represented by a density, this approach can handle large systems containing large quantities of dislocations, which may handicap discrete dislocation dynamics schemes due to the excessive computation time involved. For this reason, pillar sizes spanning a large range, from the sub-micron to micron regimes, can be simulated. The simulation results reveal the power-law relationship between strength and specimen size up to a certain size, beyond which the strength varies much more slowly with size. For specimens smaller than ∼4000b, their strength is found to be controlled by the dislocation depletion condition, in which the total dislocation density remains almost constant throughout the loading process. In specimens larger than ∼4000b, the initial dislocation distribution is of critical importance since the presence of dislocation entanglements is found to obstruct deformation in the neighboring regions within a distance of ∼2000b. This length scale suggests that the effects of dense dislocation clusters are greater in intermediate-sized specimens (e.g. 4000b and 8000b) than in larger specimens (e.g. 16 000b), according to the weakest-link concept.

  9. Misfit dislocation density and strain relaxation in graded semiconductor heterostructures with arbitrary composition profiles

    NASA Astrophysics Data System (ADS)

    Bertoli, B.; Suarez, E. N.; Ayers, J. E.; Jain, F. C.

    2009-10-01

    We present a computational approach for the determination of the equilibrium misfit dislocation density and strain in a semiconductor heterostructure with an arbitrary compositional profile. We demonstrate that there is good agreement between our computed results and known analytical solutions for heterostructures containing a single linearly graded layer or a single uniform composition layer. We have calculated the dislocation density and strain profiles in Si1-xGex/Si(001), InxGa1-xAs/GaAs(001), and ZnSySe1-y/GaAs(001) heterostructures, each containing a uniform composition layer (uniform layer) on a linearly graded buffer layer (graded layer). The density of misfit dislocations in the graded layer is inversely proportional to its grading coefficient and is unchanged by the presence of the uniform layer, but the dislocated thickness increases with the uniform layer thickness. If the uniform layer is sufficiently thick, misfit dislocations will exist throughout the graded layer, but additional misfit dislocations are not produced in the uniform layer. The biaxial strain in the uniform layer is inversely proportional to its thickness and is unchanged by the graded layer. We have also calculated the equilibrium configuration in a convex, exponentially graded Si1-xGex/Si(001) layer, for which the misfit dislocation density is tapered with distance from the interface. Other nonlinear grading profiles offer opportunities to tailor the misfit dislocation density and strain profile.

  10. Regional density functional theory for crystal growth in GaN

    NASA Astrophysics Data System (ADS)

    Nakamura, Koichi; Hayashi, Tensei; Tachibana, Akitomo; Matsumoto, Koh

    2000-12-01

    We have applied the regional density functional theory to the study of the electronic characteristics in the Ga and N adsorption process of crystal growth in gallium nitride (GaN) with the surface orientations of (0 0 0 1) and (0 0 0 1¯) . Potential energy curves along the Ga and N adsorption process were obtained for some adsorption sites by the first-principle density functional calculation using the periodic boundary model. The Ga-chemical potentials for the GaN(0 0 0 1) and GaN (0 0 0 1¯) surfaces have been derived, and we have observed the clear dependency of crystal growth in GaN on the surface orientation. Furthermore, we have calculated the regional electronic numbers and energies for the regions partitioned by the interface. The regional electronic energies are stabilized in consequence of the electron transfer as the adatom approaches the surface. It is concluded that an electron accumulation in the vicinity of the stable position of the adatom plays an important role in crystal growth.

  11. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire

    NASA Astrophysics Data System (ADS)

    Hansen, M.; Fini, P.; Zhao, L.; Abare, A. C.; Coldren, L. A.; Speck, J. S.; DenBaars, S. P.

    2000-01-01

    InGaN multiple-quantum-well laser diodes have been fabricated on fully coalesced laterally epitaxially overgrown (LEO) GaN on sapphire. The laterally overgrown "wing" regions as well as the coalescence fronts contained few or no threading dislocations. Laser diodes fabricated on these low-dislocation-density regions showed a reduction in threshold current density from 10 to 4.8 kA/cm2 compared to those on conventional planar GaN on sapphire. The internal quantum efficiency also improved from 3% for laser diodes on conventional GaN on sapphire to 22% for laser diodes on LEO GaN on sapphire.

  12. Effect of light Si doping on the properties of GaN

    NASA Astrophysics Data System (ADS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-03-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  13. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

    SciTech Connect

    Sandra Schujman; Leo Schowalter

    2010-10-15

    The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this “GaN-ready” substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ≤ 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a “GaN-ready” substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  14. Coherent and dislocated three-dimensional islands of In{sub x}Ga{sub 1-x}N self-assembled on GaN(0001) during molecular-beam epitaxy

    SciTech Connect

    Liu, Y.; Cao, Y.G.; Wu, H.S.; Xie, M.H.; Tong, S.Y.

    2005-04-15

    Molecular-beam epitaxy of In{sub x}Ga{sub 1-x}N alloy on GaN(0001) is investigated by scanning tunneling microscopy. The Stranski-Krastanov mode of growth of the alloy is followed, where the newly nucleated three-dimensional islands are initially coherent to the underlying GaN and the wetting layer, but then become dislocated when grown bigger than about 20 nm in the lateral dimension. Two types of islands show different shapes, where the coherent ones are cone shaped and the dislocated ones are pillar like, having flat-tops. Within a certain range of material coverage, the surface contains both coherent and dislocated islands, showing an overall bimodal island-size distribution. The continued deposition on such surfaces leads to the pronounced growth of dislocated islands, whereas the sizes of the coherent islands change very little.

  15. An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN

    NASA Astrophysics Data System (ADS)

    Moon, Daeyoung; Jang, Jeonghwan; Choi, Daehan; Shin, In-Su; Lee, Donghyun; Bae, Dukkyu; Park, Yongjo; Yoon, Euijoon

    2016-05-01

    An ultra-thin (26 nm) sapphire (Al2O3) membrane was used as a compliant substrate for the growth of high quality GaN. The density of misfit dislocations per unit length at the interface between the GaN layer and the sapphire membrane was reduced by 28% compared to GaN on the conventional sapphire substrate. Threading dislocation density in GaN on the sapphire membrane was measured to be 2.4×108/cm2, which is lower than that for GaN on the conventional sapphire substrate (3.2×108/cm2). XRD and micro-Raman results verifed that the residual stress in GaN on the sapphire membrane was as low as 0.02 GPa due to stress absorption by the ultra-thin compliant sapphire membrane.

  16. Relationship of dislocation density of silicon to solar cell current loss at low temperature.

    NASA Technical Reports Server (NTRS)

    Mandelkorn, J.; Baraona, C. R.; Lamneck, J. H., Jr.

    1972-01-01

    Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.

  17. Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

    NASA Astrophysics Data System (ADS)

    Tangi, Malleswararao; De, Arpan; Ghatak, Jay; Shivaprasad, S. M.

    2016-05-01

    A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-V measurements that yield mobility values as high as ≈4453 cm2/V s and the carrier concentration of ≈1.1 × 1017 cm-3, which are unprecedented in the literature for comparable InN NR diameters.

  18. Dislocation density of pure copper processed by accumulative roll bonding and equal-channel angular pressing

    SciTech Connect

    Miyajima, Yoji; Okubo, Satoshi; Abe, Hiroki; Okumura, Hiroki; Fujii, Toshiyuki; Onaka, Susumu; Kato, Masaharu

    2015-06-15

    The dislocation density of pure copper fabricated by two severe plastic deformation (SPD) processes, i.e., accumulative roll bonding and equal-channel angular pressing, was evaluated using scanning transmission electron microscopy/transmission electron microscopy observations. The dislocation density drastically increased from ~ 10{sup 13} m{sup −} {sup 2} to about 5 × 10{sup 14} m{sup −} {sup 2}, and then saturated, for both SPD processes.

  19. The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou

    2013-11-01

    GaN films are grown on cone-shaped patterned sapphire substrates (CPSSs) by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation (TD) density of GaN is investigated. High-resolution X-ray diffraction (XRD) and cathode-luminescence (CL) were used to characterize the GaN films. The XRD results showed that the edge-type dislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates (CSSs). Furthermore, when the growth temperature in the middle stage of GaN grown on CPSS decreases, the full width at half maximum of the asymmetry (102) plane of GaN is reduced. This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs. The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS, and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.

  20. Modeling grain size and dislocation density effects on harmonics of the magnetic induction

    SciTech Connect

    Sablik, M. J.; Stegemann, D.; Krys, A.

    2001-06-01

    Microstructural attributes of steels affect hysteretic magnetic properties because the microstructure affects domain wall movement and pinning. Two important features are grain size and dislocation density. The consensus experimentally is that the coercivity tends to be linearly related to the inverse of the average grain diameter and to the square root of the dislocation density. In this article, these experimental tendencies are utilized in formulating the dependence of the hysteresis parameters of the Jiles{endash}Atherton model as a function of grain size and dislocation density. The results are then used in computing the first and third harmonics of the magnetic induction as a function of grain size and dislocation density. This is done via an adaptation of a hysteresis model formulated by Jiles for higher excitation frequencies. The results indicate that the harmonic amplitudes decrease monotonically with inverse grain size and the square root of dislocation density. Since increasing inverse grain size and dislocation density are correlated with increasing tensile strength, the results are consistent with experimental results for the decrease of the harmonic amplitudes with increasing tensile strength in automotive steels. Also, the harmonic amplitudes decrease with increasing excitation frequency, consistent with experiment. {copyright} 2001 American Institute of Physics.

  1. Modeling grain size and dislocation density effects on harmonics of the magnetic induction

    NASA Astrophysics Data System (ADS)

    Sablik, M. J.; Stegemann, D.; Krys, A.

    2001-06-01

    Microstructural attributes of steels affect hysteretic magnetic properties because the microstructure affects domain wall movement and pinning. Two important features are grain size and dislocation density. The consensus experimentally is that the coercivity tends to be linearly related to the inverse of the average grain diameter and to the square root of the dislocation density. In this article, these experimental tendencies are utilized in formulating the dependence of the hysteresis parameters of the Jiles-Atherton model as a function of grain size and dislocation density. The results are then used in computing the first and third harmonics of the magnetic induction as a function of grain size and dislocation density. This is done via an adaptation of a hysteresis model formulated by Jiles for higher excitation frequencies. The results indicate that the harmonic amplitudes decrease monotonically with inverse grain size and the square root of dislocation density. Since increasing inverse grain size and dislocation density are correlated with increasing tensile strength, the results are consistent with experimental results for the decrease of the harmonic amplitudes with increasing tensile strength in automotive steels. Also, the harmonic amplitudes decrease with increasing excitation frequency, consistent with experiment.

  2. Geometrically necessary dislocation densities in olivine obtained using high-angular resolution electron backscatter diffraction.

    PubMed

    Wallis, David; Hansen, Lars N; Ben Britton, T; Wilkinson, Angus J

    2016-09-01

    Dislocations in geological minerals are fundamental to the creep processes that control large-scale geodynamic phenomena. However, techniques to quantify their densities, distributions, and types over critical subgrain to polycrystal length scales are limited. The recent advent of high-angular resolution electron backscatter diffraction (HR-EBSD), based on diffraction pattern cross-correlation, offers a powerful new approach that has been utilised to analyse dislocation densities in the materials sciences. In particular, HR-EBSD yields significantly better angular resolution (<0.01°) than conventional EBSD (~0.5°), allowing very low dislocation densities to be analysed. We develop the application of HR-EBSD to olivine, the dominant mineral in Earth's upper mantle by testing (1) different inversion methods for estimating geometrically necessary dislocation (GND) densities, (2) the sensitivity of the method under a range of data acquisition settings, and (3) the ability of the technique to resolve a variety of olivine dislocation structures. The relatively low crystal symmetry (orthorhombic) and few slip systems in olivine result in well constrained GND density estimates. The GND density noise floor is inversely proportional to map step size, such that datasets can be optimised for analysing either short wavelength, high density structures (e.g. subgrain boundaries) or long wavelength, low amplitude orientation gradients. Comparison to conventional images of decorated dislocations demonstrates that HR-EBSD can characterise the dislocation distribution and reveal additional structure not captured by the decoration technique. HR-EBSD therefore provides a highly effective method for analysing dislocations in olivine and determining their role in accommodating macroscopic deformation. PMID:27337604

  3. High voltage and high current density vertical GaN power diodes

    SciTech Connect

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  4. High voltage and high current density vertical GaN power diodes

    DOE PAGESBeta

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  5. Strength of metals under vibrations - dislocation-density-function dynamics simulations

    NASA Astrophysics Data System (ADS)

    Cheng, B.; Leung, H. S.; Ngan, A. H. W.

    2015-06-01

    It is well known that ultrasonic vibration can soften metals, and this phenomenon has been widely exploited in industrial applications concerning metal forming and bonding. Recent experiments show that the simultaneous application of oscillatory stresses from audible to ultrasonic frequency ranges can lead to not only softening but also significant dislocation annihilation and subgrain formation in metal samples from the nano- to macro-size range. These findings indicate that the existing understanding of ultrasound softening - that the vibrations either impose additional stress waves to augment the quasi-static applied load, or cause heating of the metal, whereas the metal's intrinsic deformation resistance or mechanism remains unaltered - is far from complete. To understand the softening and the associated enhanced subgrain formation and dislocation annihilation, a new simulator based on the dynamics of dislocation-density functions is employed. This new simulator considers the flux, production and annihilation, as well as the Taylor and elastic interactions between dislocation densities. Softening during vibrations as well as enhanced cell formation is predicted. The simulations reveal the main mechanism for subcell formation under oscillatory loadings to be the enhanced elimination of statistically stored dislocations (SSDs) by the oscillatory stress, leaving behind geometrically necessary dislocations with low Schmid factors which then form the subgrain walls. The oscillatory stress helps the depletion of the SSDs, because the chance for them to meet up and annihilate is increased with reversals of dislocation motions. This is the first simulation effort to successfully predict the cell formation phenomenon under vibratory loadings.

  6. Stochastically forced dislocation density distribution in plastic deformation.

    PubMed

    Chattopadhyay, Amit K; Aifantis, Elias C

    2016-08-01

    The dynamical evolution of dislocations in plastically deformed metals is controlled by both deterministic factors arising out of applied loads and stochastic effects appearing due to fluctuations of internal stress. Such types of stochastic dislocation processes and the associated spatially inhomogeneous modes lead to randomness in the observed deformation structure. Previous studies have analyzed the role of randomness in such textural evolution, but none of these models have considered the impact of a finite decay time (all previous models assumed instantaneous relaxation which is "unphysical") of the stochastic perturbations in the overall dynamics of the system. The present article bridges this knowledge gap by introducing a colored noise in the form of an Ornstein-Uhlenbeck noise in the analysis of a class of linear and nonlinear Wiener and Ornstein-Uhlenbeck processes that these structural dislocation dynamics could be mapped on to. Based on an analysis of the relevant Fokker-Planck model, our results show that linear Wiener processes remain unaffected by the second time scale in the problem, but all nonlinear processes, both the Wiener type and Ornstein-Uhlenbeck type, scale as a function of the noise decay time τ. The results are expected to ramify existing experimental observations and inspire new numerical and laboratory tests to gain further insight into the competition between deterministic and random effects in modeling plastically deformed samples. PMID:27627278

  7. Density of kinks on a dislocation segment in thermodynamic equilibrium and the interaction between solitons

    NASA Astrophysics Data System (ADS)

    Pawel/ek, A.

    1987-09-01

    The paper deals with a modification of the classical expression derived by John P. Hirth and J. Lothe [Theory of Dislocations (McGraw-Hill, New York, 1972)] for the density of kinks on a dislocation segment in thermodynamic equilibrium imposed by external stresses. The dislocation kink-kink interaction is discussed in terms of soliton-antisoliton interaction, the analytical results obtained by J. Rubinstein [J. Math. Phys. 11, 258 (1970)] and the ones numerically obtained by M. Peyrard and David K. Campbell [Physica 9D, 33 (1983)] being applied for that purpose.

  8. Reconstructions of the GaN(1011) surfaces: Density functional theory calculations

    NASA Astrophysics Data System (ADS)

    Hyun, Jung-Min; Kim, Yong-Sung; Kim, Hanchul

    2012-02-01

    GaN has been extensively studied for its potential applicability in optoelectronics as well as in spintronics. The functional performance in such applications depends on the surface characteristics of thin films. Thin films of GaN are typically grown along the polar [0001] direction, but their light-emission efficiency is reduced due to the electron-hole separation. A strategy to remedy such an undesired effect is to grow films along nonpolar or semipolar directions. In this presentation, we will address the reconstructions of the Ga-terminated semipolar (1011) surface. We performed the density functional theory calculations using the generalized gradient approximation, the projector augmented wave potentials, and the repeated slabs. From the calculated energetics of various reconstructions, we found that there exist a few structural motifs of GaN(1011). They are short Ga chains and Ga vacancies. For instance, a 4 x 2 reconstruction with a Ga tetramer and surface Ga vacancies is stable in the N-rich condition, which is significantly different from the previous results [Akiyama et al, Jpn. J. Appl. Phys. 48, 100201 (2009)]. Our results would provide a comprehensive understanding on the Ga-terminated semipolar surfaces.

  9. Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1991-01-01

    Calculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.

  10. Dislocation Density Tensor Characterization of Deformation Using 3D X-Ray Microscopy

    SciTech Connect

    Larson, Ben C; Tischler, Jonathan Zachary; El-Azab, Anter; Liu, Wenjun

    2008-01-01

    Three-dimensional (3D) X-ray microscopy with submicron resolution has been used to make spatially resolved measurements of lattice curvature and elastic strain over two-dimensional slices in thin deformed Si plates. The techniques and capabilities associated with white-beam 3D X-ray microscopy are discussed, and both theoretical and experimental considerations associated with the measurement of Nye dislocation density tensors in deformed materials are presented. The ability to determine the local geometrically necessary dislocation (GND) density in the form of a dislocation density tensor, with micron spatial resolution over mesoscopic length scales, is demonstrated. Results are shown for the special case of an elastically bent (dislocation free) thin Si plate and for a similar thin Si plate that was bent plastically, above the brittle-to-ductile transition temperature, to introduce dislocations. Within the uncertainties of the measurements, the known result that GND density is zero for elastic bending is obtained, and well-defined GND distributions are observed in the plastically deformed Si plate. The direct and absolute connection between experimental measurements of GND density and multiscale modeling and computer simulations of deformation microstructures is discussed to highlight the importance of submicron-resolution 3D X-ray microscopy for mesoscale characterization of material defects and to achieve a fundamental understanding of deformation in ductile materials.

  11. Dislocation density tensor characterization of deformation using 3D x-ray microscopy.

    SciTech Connect

    Larson, B. C.; Tischler, J. Z.; El-Azab, A.; Liu, W.; ORNL; Florida State Univ.

    2008-04-01

    Three-dimensional (3D) X-ray microscopy with submicron resolution has been used to make spatially resolved measurements of lattice curvature and elastic strain over two-dimensional slices in thin deformed Si plates. The techniques and capabilities associated with white-beam 3D X-ray microscopy are discussed, and both theoretical and experimental considerations associated with the measurement of Nye dislocation density tensors in deformed materials are presented. The ability to determine the local geometrically necessary dislocation (GND) density in the form of a dislocation density tensor, with micron spatial resolution over mesoscopic length scales, is demonstrated. Results are shown for the special case of an elastically bent (dislocation free) thin Si plate and for a similar thin Si plate that was bent plastically, above the brittle-to-ductile transition temperature, to introduce dislocations. Within the uncertainties of the measurements, the known result that GND density is zero for elastic bending is obtained, and well-defined GND distributions are observed in the plastically deformed Si plate. The direct and absolute connection between experimental measurements of GND density and multiscale modeling and computer simulations of deformation microstructures is discussed to highlight the importance of submicron-resolution 3D X-ray microscopy for mesoscale characterization of material defects and to achieve a fundamental understanding of deformation in ductile materials.

  12. Determining dislocation densities from the extinction effect (review)

    SciTech Connect

    Ivanov, A.N.; Polyakov, A.M.; Skakov, Yu.A.

    1987-03-01

    Much attention is being given to dynamic x-ray scattering in crystals containing defects. As general diffraction theory for crystals with defects does not at present extend beyond formal expressions and there is no rigorous theory of diffraction by crystals containing dislocations, one describes extinction in a nonideal crystal via phenomenological theories. In this paper, the authors review the various methods of analyzing the dislocation structure from the integral intensities which are based on three extinction models: Darwin's extinction theory; mosaic-crystal scattering theory; and the transport equations method proposed by Stephan for Bragg geometry and Laue geometry. The most rigorous method in a theoretical respect of those covered in this review is based on Kato's extinction theory. The authors consider it necessary to devise a general theory of x-ray scattering for crystals with any type of long-range order in the displacement pattern, although this paper has dealt with some of the applications of quantum mechanics and statistical physics in describing diffraction.

  13. Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

    SciTech Connect

    Schmidt, Gordon Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

    2015-06-22

    Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.

  14. Dislocation Density-Based Constitutive Model for the Mechanical Behavior of Irradiated Cu

    SciTech Connect

    Arsenlis, A; Wirth, B D; Rhee, M

    2003-04-10

    Performance degradation of structural steels in nuclear environments results from the development of a high number density of nanometer scale defects. The defects observed in copper-based alloys are composed of vacancy clusters in the form of stacking fault tetrahedra and/or prismatic dislocation loops, which impede dislocation glide and are evidenced in macroscopic uniaxial stress-strain curves as increased yield strengths, decreased total strain to failure, decreased work hardening and the appearance of a distinct upper yield point above a critical defect concentration (neutron dose). In this paper, we describe the development of an internal state variable model for the mechanical behavior of materials subject to these environments. This model has been developed within an information-passing multiscale materials modeling framework, in which molecular dynamics simulations of dislocation--radiation defect interactions, inform the final coarse-grained continuum model. The plasticity model includes mechanisms for dislocation density growth and multiplication and for radiation defect density evolution with dislocation interaction. The general behavior of the constitutive (single material point) model shows that as the defect density increases, the initial yield point increases and the initial strain hardening decreases. The final coarse-grained model is implemented into a finite element framework and used to simulate the behavior of tensile specimens with varying levels of irradiation induced material damage. The simulation results compare favorably with the experimentally observed mechanical properties of irradiated materials in terms of their increased strength, decreased hardening, and decreased ductility with increasing irradiation dose.

  15. A continuum model for dislocation dynamics in three dimensions using the dislocation density potential functions and its application to micro-pillars

    NASA Astrophysics Data System (ADS)

    Zhu, Yichao; Xiang, Yang

    2015-11-01

    In this paper, we present a dislocation-density-based three-dimensional continuum model, where the dislocation substructures are represented by pairs of dislocation density potential functions (DDPFs), denoted by ϕ and ψ. The slip plane distribution is characterized by the contour surfaces of ψ, while the distribution of dislocation curves on each slip plane is identified by the contour curves of ϕ which represents the plastic slip on the slip plane. By using DDPFs, we can explicitly write down an evolution equation system, which is shown consistent with the underlying discrete dislocation dynamics. The system includes (i) a constitutive stress rule, which describes how the total stress field is determined in the presence of dislocation networks and applied loads; (ii) a plastic flow rule, which describes how dislocation ensembles evolve. The proposed continuum model is validated through comparisons with discrete dislocation dynamics simulation results and experimental data. As an application of the proposed model, the "smaller-being-stronger" size effect observed in single-crystal micro-pillars is studied. A scaling law for the pillar flow stress σflow against its (non-dimensionalized) size D is derived to be σflow ∼ log (D) / D.

  16. On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

    SciTech Connect

    Medvedev, O. S. Vyvenko, O. F.; Bondarenko, A. S.

    2015-09-15

    Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of ∼15 meV and splitting of ∼30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stacking fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.

  17. Nanoscale lateral epitaxial overgrowth of GaN on Si (111)

    SciTech Connect

    Zang, K.Y.; Wang, Y.D.; Chua, S.J.; Wang, L.S.

    2005-11-07

    We demonstrate that GaN can selectively grow by metalorganic chemical vapor deposition into the pores and laterally over the nanoscale patterned SiO{sub 2} mask on a template of GaN/AlN/Si. The nanoporous SiO{sub 2} on GaN surface with pore diameter of approximately 65 nm and pore spacing of 110 nm was created by inductively coupled plasma etching using anodic aluminum oxide template as a mask. Cross-section transmission electron microscopy shows that the threading-dislocation density was largely reduced in this nanoepitaxial lateral overgrowth region. Dislocations parallel to the interface are the dominant type of dislocations in the overgrown layer of GaN. A large number of the threading dislocations were filtered by the nanoscale mask, which leads to the dramatic reduction of the threading dislocations during the growth within the nano-openings. More importantly, due to the nanoscale size of the mask area, the very fast coalescence and subsequent lateral overgrowth of GaN force the threading dislocations to bend to the basal plane within the first 50 nm of the film thickness. The structure of overgrown GaN is a truncated hexagonal pyramid which is covered with six {l_brace}1101{r_brace} side facets and (0001) top surface depending on the growth conditions.

  18. Effect of strain rate and dislocation density on the twinning behavior in tantalum

    NASA Astrophysics Data System (ADS)

    Florando, Jeffrey N.; El-Dasher, Bassem S.; Chen, Changqiang; Swift, Damian C.; Barton, Nathan R.; McNaney, James M.; Ramesh, K. T.; Hemker, Kevin J.; Kumar, Mukul

    2016-04-01

    The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10-4/s to 103/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77K at strain rates from 1/s to 103/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, even as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. In addition, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.

  19. Measuring Depth-dependent Dislocation Densities and Elastic Strains in an Indented Ni-based Superalloy

    SciTech Connect

    Barabash, O.M.; Santella, M.; Barabash, R.I.; Ice, G.E.; Tischler, J.

    2011-12-14

    The indentation-induced elastic-plastic zone in an IN 740 Ni-based superalloy was studied by three-dimensional (3-D) x-ray microdiffraction and electron back scattering diffraction (EBSD). Large lattice reorientations and the formation of geometrically necessary dislocations are observed in the area with a radius of {approx}75 {mu}m. A residual compression zone is found close to the indent edge. An elastic-plastic transition is observed at {approx}20 {mu}m from the indent edge. Depth dependent dislocation densities are determined at different distances from the indent edge.

  20. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  1. Peierls potential of screw dislocations in bcc transition metals: Predictions from density functional theory

    SciTech Connect

    Weinberger, Christopher R.; Tucker, Garritt J.; Foiles, Stephen M.

    2013-02-01

    It is well known that screw dislocation motion dominates the plastic deformation in body-centered-cubic metals at low temperatures. The nature of the nonplanar structure of screw dislocations gives rise to high lattice friction, which results in strong temperature and strain rate dependence of plastic flow. Thus the nature of the Peierls potential, which is responsible for the high lattice resistance, is an important physical property of the material. However, current empirical potentials give a complicated picture of the Peierls potential. Here, we investigate the nature of the Peierls potential using density functional theory in the bcc transition metals. The results show that the shape of the Peierls potential is sinusoidal for every material investigated. Furthermore, we show that the magnitude of the potential scales strongly with the energy per unit length of the screw dislocation in the material.

  2. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

    PubMed

    Shih, Cheng-Hung; Huang, Teng-Hsing; Schuber, Ralf; Chen, Yen-Liang; Chang, Liuwen; Lo, Ikai; Chou, Mitch Mc; Schaadt, Daniel M

    2011-01-01

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample. PMID:21711945

  3. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

    PubMed Central

    2011-01-01

    We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample. PMID:21711945

  4. High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

    NASA Astrophysics Data System (ADS)

    Tsukada, Yusuke; Enatsu, Yuuki; Kubo, Shuichi; Ikeda, Hirotaka; Kurihara, Kaori; Matsumoto, Hajime; Nagao, Satoru; Mikawa, Yutaka; Fujito, Kenji

    2016-05-01

    In this paper, we discusse the origin of basal-plane stacking faults (BSFs) generated in the homoepitaxial hydride vapor phase epitaxy (HVPE) growth of m-plane gallium nitride (GaN). We investigated the effects of seed quality, especially dislocation density, on BSF generation during homoepitaxy. The results clearly identify basal-plane dislocation in the seed as a cause of BSF generation. We realized high-quality m-plane GaN substrates with a 2-in. diameter using HVPE on low-dislocation-density m-plane seeds.

  5. A molecular dynamics study of dislocation density generation and plastic relaxation during shock of single crystal Cu

    NASA Astrophysics Data System (ADS)

    Sichani, Mehrdad M.; Spearot, Douglas E.

    2016-07-01

    The molecular dynamics simulation method is used to investigate the dependence of crystal orientation and shock wave strength on dislocation density evolution in single crystal Cu. Four different shock directions <100>, <110>, <111>, and <321> are selected to study the role of crystal orientation on dislocation generation immediately behind the shock front and plastic relaxation as the system reaches the hydrostatic state. Dislocation density evolution is analyzed for particle velocities between the Hugoniot elastic limit ( up H E L ) for each orientation up to a maximum of 1.5 km/s. Generally, dislocation density increases with increasing particle velocity for all shock orientations. Plastic relaxation for shock in the <110>, <111>, and <321> directions is primarily due to a reduction in the Shockley partial dislocation density. In addition, plastic anisotropy between these orientations is less apparent at particle velocities above 1.1 km/s. In contrast, plastic relaxation is limited for shock in the <100> orientation. This is partially due to the emergence of sessile stair-rod dislocations with Burgers vectors of 1/3<100> and 1/6<110>. The nucleation of 1/6<110> dislocations at lower particle velocities is mainly due to the reaction between Shockley partial dislocations and twin boundaries. On the other hand, for the particle velocities above 1.1 km/s, the nucleation of 1/3<100> dislocations is predominantly due to reaction between Shockley partial dislocations at stacking fault intersections. Both mechanisms promote greater dislocation densities after relaxation for shock pressures above 34 GPa compared to the other three shock orientations.

  6. GaAsP solar cells on GaP/Si with low threading dislocation density

    NASA Astrophysics Data System (ADS)

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-07-01

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  7. Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs

    NASA Astrophysics Data System (ADS)

    Qi, Zhiqiang; Li, Senlin; Sun, Shichuang; Zhang, Wei; Ye, Wei; Fang, Yanyan; Tian, Yu; Dai, Jiangnan; Chen, Changqing

    2015-10-01

    An effective approach for growing large-scale, uniformly aligned ZnO nanorods arrays is demonstrated. The synthesis uses a GaN quantum dot (QD) template produced by a self-assembled Stranski-Krastanow mode in metal organic chemical vapor deposition, which serves as a nucleation site for ZnO owing to the QD’s high surface free energy. The resultant ZnO nanorods with uniform shape and length align vertically on the template, while their density is easily tunable by adjusting the density of GaN QDs, which can be adjusted by simply varying growth interruption. By controlling the density of ZnO nanorod arrays, their optical performance can also be improved. This approach opens the possibility of combining one-dimensional (1D) with 0D nanostructures for applications in sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects.

  8. Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Lin, D. G.; Aoyama, T.

    1984-01-01

    A striking effect of the Fermi energy on the dislocation density in melt-grown GaAs has been discovered. Thus, a shift of the Fermi energy from 0.1 eV above to 0.2 eV below its intrinsic value (at high temperature, i.e., near 1100 K) increases the dislocation density by as much as five orders of magnitude. The Fermi energy shift was brought about by n-type and p-type doping at a level of about 10 to the 17th per cu cm (under conditions of optimum partial pressure of As, i.e., under optimum melt stoichiometry). This effect must be associated with the fact that the Fermi energy controls the charge state of vacancies (i.e., the occupancy of the associated electronic states) which in turn must control their tendency to coalesce and thus the dislocation density. It appears most likely that gallium vacancies are the critical species.

  9. Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Junsong, Cao; Xin, Lü; Lubing, Zhao; Shuang, Qu; Wei, Gao

    2015-02-01

    The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.

  10. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    SciTech Connect

    Lin, Zhiyu; Zhang, Jincheng Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue; Su, Xujun; Shi, Xuefang

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  11. Stress and Defect Control in GaN Using Low Temperature Interlayers

    SciTech Connect

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  12. Influence of Mn-doping on densities of screw- and edge-type threading dislocations in Ga 1-xMn xN grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Chen, Z. T.; Yang, X. L.; Yang, Z. J.; Zhao, H. B.; Wang, C. D.; Zhang, G. Y.

    2008-05-01

    A detailed study is presented on the influence of Mn-doping on densities of screw (c-type) and edge (a-type) threading dislocations (TDs) in Ga 1-xMn xN grown by metal organic chemical vapor deposition (MOCVD) by using high-resolution X-ray diffraction (XRD). Three regions were present in Mn source rate dependence plots of density of c-TDs, and the mean twist angle corresponding to the density of a-TDs. In each region, Mn-doping exhibits different effects on the densities of a- and c-TDs, which is attributed to different dependences of the two types of TD on stresses. The results obtained from X-ray diffraction are consistent with those of atomic force microscope (AFM) measurements. It is further suggested that similar phenomena would occur when doping other elements into GaN grown by MOCVD.

  13. Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates

    NASA Astrophysics Data System (ADS)

    Wang, Hongbo; Sodabanlu, Hassanet; Daigo, Yoshiaki; Seino, Takuya; Nakagawa, Takashi; Sugiyama, Masakazu

    2016-05-01

    An ex situ AlN seed layer was formed by physical vapor deposition (PVD) on a Si substrate, aiming at the production of high-quality GaN on Si by metal–organic vapor-phase epitaxy. A low density of initial GaN islands were obtained by reducing the trimethylgallium (TMGa) flow rate. The dislocation density of GaN was dramatically reduced with 3D growth compared with 2D growth, as indicated by measurements of XRD rocking curves (FWHM of 384 and 461 arcsec for 0002 and 10\\bar{1}0 diffractions, respectively) and cathodoluminescence (CL) mapping (dark-spot density of 3.4 × 108 cm‑2) for 1-µm-thick crack-free GaN on a Si substrate. The values were almost equivalent to those of the layers grown on sapphire substrates.

  14. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  15. Grain structure and dislocation density measurements in a friction stir welded aluminum alloy using x-ray peak profile analysis

    SciTech Connect

    Woo, Wan Chuck; Balogh, Levente; Ungar, Prof Tomas; Choo, Hahn; Feng, Zhili

    2008-01-01

    The dislocation density and grain structure of a friction stir welded 6061-T6 aluminum alloy was determined as a function of distance from the weld centerline using high-resolution micro-beam x-ray diffraction. The results of the x-ray peak profile analysis show that the dislocation density is about 1.2 x 10^14 m-2 inside and 4.8 x 10^14 m-2 outside of the weld region. The average subgrain size is about 180 nm in both regions. Compared to the base material, the dislocation density was significantly decreased in the dynamic recrystallized zone of the friction stir welds, which is a good correlation with the TEM observations. The influence of the dislocation density on the strain hardening behavior during tensile deformation is also discussed.

  16. Dislocation density-based finite element method modeling of ultrasonic consolidation

    NASA Astrophysics Data System (ADS)

    Pal, Deepankar

    A dislocation density-based constitutive model has been developed and implemented into a crystal plasticity quasi-static finite element framework. This approach captures the statistical evolution of dislocation structures and grain fragmentation at the bonding interface when sufficient boundary conditions pertaining to the Ultrasonic Consolidation (UC) process are prescribed. The hardening is incorporated using statistically stored and geometrically necessary dislocation densities (SSDs and GNDs), which are dislocation analogs of isotropic and kinematic hardening, respectively. Since the macroscopic global boundary conditions during UC involves cyclic sinosuidal simple shear loading along with constant normal pressure, the cross slip mechanism has been included in the evolution equation for SSDs. The inclusion of cross slip promotes slip irreversibility, dislocation storage, and hence, cyclic hardening during the UC. The GND considers strain-gradient and thus renders the model size-dependent. The model is calibrated using experimental data from published refereed literature for simple shear deformation of single crystalline pure aluminum alloy and uniaxial tension of polycrystalline Aluminum 3003-H18 alloy. The model also incorporates various local and global effects such as (1) friction, (2) thermal softening, (3) acoustic softening, (4) surface texture of the sonotrode and initial mating surfaces, and (6) presence of oxide-scale at the mating surfaces, which further contribute significantly specifically to the grain substructure evolution at the interface and to the anisotropic bulk deformation away from the interface during UC in general. The model results have been predicted for Al-3003 alloy undergoing UC. A good agreement between the experimental and simulated results has been observed for the evolution of linear weld density and anisotropic global strengths macroscopically. Similarly, microscopic observations such as embrittlement due to grain substructure

  17. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

    NASA Astrophysics Data System (ADS)

    Linder, K. K.; Zhang, F. C.; Rieh, J.-S.; Bhattacharya, P.; Houghton, D.

    1997-06-01

    The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ˜104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

  18. Amplified spontaneous emission of phonons as a likely mechanism for density-dependent velocity saturation in GaN transistors

    NASA Astrophysics Data System (ADS)

    Khurgin, Jacob B.; Bajaj, Sanyam; Rajan, Siddharth

    2016-09-01

    We show that density-dependent velocity saturation in a GaN high electron mobility transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space results in population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-like increase in LO phonon emission causes a rapid loss of electron energy and momentum and leads to drift velocity saturation. Our simple model correctly predicts both the general trend of decreasing saturation velocity with increasing electron density, and the measured experimental values of saturation.

  19. The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method

    NASA Astrophysics Data System (ADS)

    Sugiyama, N.; Nakaharai, S.; Hirashita, N.; Tezuka, T.; Moriyama, Y.; Usuda, K.; Takagi, S.

    2007-01-01

    A modified process of the Ge condensation method, which is a technique to form SiGe on insulator (SGOI) substrates for strained SOI-MOSFETs, is proposed to reduce threading dislocation density and the effectiveness of the proposed technique is demonstrated. The generation of threading dislocations, which is attributable to the rising behaviour of fragments of misfit dislocations formed at the SiGe/SOI interfaces, is suppressed by controlling the oxygen pressure during the ramping up period in the Ge condensation process. The threading dislocation density of SGOI substrates formed by the new method, which is evaluated by the enhanced secco-etching method, has been as low as 1 × 103 cm-2 for the 230 nm thick SGOI layer with a Ge content of 20% and 75% relaxation.

  20. Reduction of Dislocation Density in HgCdTe on Si by Producing Highly Reticulated Structures

    NASA Astrophysics Data System (ADS)

    Stoltz, A. J.; Benson, J. D.; Carmody, M.; Farrell, S.; Wijewarnasuriya, P. S.; Brill, G.; Jacobs, R.; Chen, Y.

    2011-08-01

    HgCdTe, because of its narrow band gap and low dark current, is the infrared detector material of choice for several military and commercial applications. CdZnTe is the substrate of choice for HgCdTe as it can be lattice matched, resulting in low-defect-density epitaxy. Being often small and not circular, layers grown on CdZnTe are difficult to process in standard semiconductor equipment. Furthermore, CdZnTe can often be very expensive. Alternative inexpensive large circular substrates, such as silicon or gallium arsenide, are needed to scale production of HgCdTe detectors. Growth of HgCdTe on these alternative substrates has its own difficulty, namely a large lattice mismatch (19% for Si and 14% for GaAs). This large mismatch results in high defect density and reduced detector performance. In this paper we discuss ways to reduce the effects of dislocations by gettering these defects to the edge of a reticulated structure. These reticulated surfaces enable stress-free regions for dislocations to glide to. In the work described herein, HgCdTe-on-Si diodes have been produced with R 0 A 0 of over 400 Ω cm2 at 78 K and cutoff of 10.1 μm. Further, these diodes have good uniformity at 78 K at both 9.3 μm and 10.14 μm.

  1. Growth of high quality GaN layer on carbon nanotube-graphene network structure as intermediate layer

    NASA Astrophysics Data System (ADS)

    Seo, Taeo Hoon; Park, Ah Hyun; Park, Sungchan; Kim, Myung Jong; Suh, Eun-Kyung

    2015-03-01

    In general, high-quality GaN layers are synthesized on low-temperature (LT) GaN buffer layer on a single crystal sapphire substrate. However, large differences in fundamental properties such as lattice constants and thermal expansion coefficients between GaN layer and sapphire substrate generate high density of threading dislocation (TD) that leads to deterioration of optical and structural properties. Graphene has been attracting much attention due to its excellent physical properties However, direct epitaxial growth of GaN film onto graphene layer on substrates is not easily accessible due to the lack of chemical reactivity on graphene which consisted of C-C bond of sp2 hexagonally arranged carbon atoms with no dangling bonds. In this work, an intermediate layer for the GaN growth on sapphire substrate was constructed by inserting carbon nanotubes and graphene hybrid structure (CGH) Optical and structural properties of GaN layer grown on CGH were compared with those of GaN layer directly grown on sapphire CNTs act as nucleation sites and play a crucial role in the growth of single crystal high-quality GaN on graphene layer. Also, graphene film acts as a mask for epitaxial lateral overgrowth of GaN layer, which can effectively reduce TD density. A grant from the Korea Institute of Science and Technology (KIST) institutional program.

  2. Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

    PubMed

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-30

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104). PMID:23248170

  3. Low density of threading dislocations in AlN grown on sapphire

    NASA Astrophysics Data System (ADS)

    Faleev, Nikolai; Lu, Hai; Schaff, William J.

    2007-05-01

    We report on high resolution x-ray diffraction studies of the crystalline perfection and the relaxation of elastic strain in AlN grown by MBE on sapphire(0001). Thin (200-300 nm thick) AlN layers were grown with a very low density of threading screw dislocations. A density of 1.75-8.5×105 cm-2, the lowest value ever reported for III-Nitride epitaxial layers, was observed in a surface layer formed over a defective nucleation layer. Residual elastic strain was found in investigated AlN layers. Stress was found to be close to that expected from thermal expansion mismatch between the AlN and sapphire(0001). A model for the structural transformation of crystalline defects accounts for these observations.

  4. Microstructure of laterally overgrown GaN layers

    SciTech Connect

    Liliental-Weber, Zuzanna; Cherns, David

    2001-04-03

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

  5. Defect structure of a free standing GaN wafer grown by the ammonothermal method

    NASA Astrophysics Data System (ADS)

    Sintonen, Sakari; Suihkonen, Sami; Jussila, Henri; Lipsanen, Harri; Tuomi, Turkka O.; Letts, Edward; Hoff, Sierra; Hashimoto, Tadao

    2014-11-01

    White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8×104 cm-2 and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed.

  6. Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Lee, Donghyun; Shin, In-Su; Jin, Lu; Kim, Donghyun; Park, Yongjo; Yoon, Euijoon

    2016-06-01

    Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30 nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728 arcsec from 1005 arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.

  7. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam Lee, Dong Nyung; Ju, Jin-Woo; Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  8. Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

    SciTech Connect

    Mamand, S.M.; Omar, M.S.; Muhammad, A.J.

    2012-05-15

    Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

  9. Curvature and bow of bulk GaN substrates

    NASA Astrophysics Data System (ADS)

    Foronda, Humberto M.; Romanov, Alexey E.; Young, Erin C.; Roberston, Christian A.; Beltz, Glenn E.; Speck, James S.

    2016-07-01

    We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.

  10. Electron mobility limited by scattering from threading dislocation lines within gallium nitride

    NASA Astrophysics Data System (ADS)

    Mohammad Alavi, Seyed; Bagani, Erfan

    2016-03-01

    Theoretical as well as experimental studies in the literature suggest that defect sites associated with the threading dislocation lines within n-type gallium nitride (GaN) act to trap free electrons from the bulk of this semiconductor material. As a result, the core of the threading dislocation lines become negatively charged. The charge accumulated along the core of a threading dislocation line should be screened by a charge of opposite polarity and equal in absolute value per unit length along the dislocation line. In the present work, we model this screened charge buildup along the threading dislocation lines by two concentric space-charge cylinders. Quantum mechanical theory of scattering in cylindrical coordinates is then employed in order to numerically compute the electron mobility limited by scattering from the charged threading dislocation lines. The dependence of the computed electron mobility on the dislocation line density and on the amount of charge accumulated per unit length along the core of the dislocation lines is also investigated in this work. Our computed electron mobility results are compared with results from existing calculations of the GaN dislocation scattering limited electron mobility in the literature.

  11. Distribution of the lateral correlation length in GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Kozlowski, J.; Paszkiewicz, R.; Korbutowicz, R.; Tlaczala, M.

    2001-12-01

    GaN structures belong to the most popular wide-bandgap semiconductors. Large lattice mismatch existing between the layer and substrates (3.5% for SiC and even 16% in the case of sapphire substrate) results in structures with a large number of defects. The typical GaN epitaxial layer consists of dislocation-free regions with lateral dimensions equal to a few hundred nanometers. The dislocation density changes from 10 8 cm -2 inside the grains to 10 10 cm -2 in the grain boundaries. The average value of the lateral correlation lengths (coherence wavelength) seems to be not quite satisfactory. Particularly, it is connected with lateral direction, because the vertical length is approximately equal to the thickness of the epitaxial layer. This paper presents the new approach for the determination of GaN crystallites dislocation-free block size distributions. This method is based on the X-ray peak profile analysis and solution of the Fredholm integral equation. The necessary peaks are obtained from the high-resolution X-ray diffractometry measurements. The obtained results have been shown for the various samples: GaN layers grown on low temperature buffer layer (GaN or AlN). Very interesting results were obtained in the first case, where two different sizes of the blocks appear.

  12. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-Tao; Xu, Ke; Guo, Li-Ping; Yang, Zhi-Jian; Pan, Yao-Bo; Su, Yue-Yong; Zhang, Han; Shen, Bo; Zhang, Guo-Yi

    2006-05-01

    We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.

  13. Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas

    SciTech Connect

    Shul, R.J.; Briggs, R.D.; Han, J.; Pearton, S.J.; Lee, J.W.; Vartuli, C.B.; Killeen, K.P.; Ludowise, M.J.

    1997-05-01

    Fabrication of group-III nitride electronic and photonic devices relies heavily on the ability to pattern features with anisotropic profiles, smooth surface morphologies, etch rates often exceeding 1 {micro}m/min, and a low degree of plasma-induced damage. Patterning these materials has been especially difficult due to their high bond energies and their relatively inert chemical nature as compared to other compound semiconductors. However, high-density plasma etching has been an effective patterning technique due to ion fluxes which are 2 to 4 orders of magnitude higher than conventional RIE systems. GaN etch rates as high as {approximately}1.3 {micro}m/min have been reported in ECR generated ICl plasmas at {minus}150 V dc-bias. In this study, the authors report high-density GaN etch results for ECR- and ICP-generated plasmas as a function of Cl{sub 2}- and BCl{sub 3}-based plasma chemistries.

  14. Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111)

    NASA Astrophysics Data System (ADS)

    Zang, K. Y.; Wang, Y. D.; Chua, S. J.; Wang, L. S.; Tripathy, S.; Thompson, C. V.

    2006-04-01

    Nanoheteroepitaxial (NHE) lateral overgrowth of GaN on nanoporous Si(111) substrates has been demonstrated. Nanopore arrays in Si(111) surfaces were fabricated using anodized aluminum oxide templates as etch masks, resulting in an average pore diameter and depth of about 60 and 160-180nm, respectively. NHE growth of AlN and GaN was found to result in a significant reduction in the threading dislocation density (<108cm-2) compared to that on flat Si(111). Most dislocations that originate at the Si interface bent to lie in the GaN (0001) basal plane during lateral growth over the pore openings. E2 phonon blueshifts in the Raman spectra indicate a significant relaxation of the tensile stress in the coalesced GaN films, due to three-dimensional stress relaxation mechanisms on porous substrates. Our results show that a single step lateral overgrowth of GaN on nanopatterned Si(111) substrates without a dielectric mask is a simple way to improve the crystalline quality of GaN layers for microelectronic applications.

  15. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Gibart, Pierre

    2004-05-01

    Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for optoelectronics and high temperature, high power electronics. Actually, GaN is probably the most important semiconductor since silicon. However, achievement of its full potential has still been limited by a dramatic lack of suitable GaN bulk single crystals. GaN has a high melting temperature and a very high decomposition pressure; therefore it cannot be grown using conventional methods used for GaAs or Si like Czochraslski or Bridgman growths. Since there is no GaN bulk single crystal commercially available, all technological development of GaN-based devices relies on heteroepitaxy. Most of the current device structures are grown on sapphire or 6H-SiC. However, since their lattice parameters and thermal expansion coefficients are not well-matched to GaN, the epitaxial growth generates huge densities of defects, with threading dislocations (TDs) being the most prevalent (109-1011 cm-2). As a comparison, homoepitaxially grown GaAs exhibits ~102-104 dislocation cm-2, and homoepitaxial Si almost 0. Actually this large density of TDs in GaN drastically limits the performance and operating lifetime of nitride-based devices. Therefore, there is currently a tremendous technological effort to reduce these defects. Metal organic vapour phase epitaxy (MOVPE) is currently the most widely used technology. Actually, all optoelectronic commercial device structures are fabricated using MOVPE. In MOVPE, the most appropriate precursor for nitrogen is ammonia (NH3), whereas either trimethyl or triethylgallium may be used as a gallium source. MOVPE of GaN requires a high partial pressure of NH3, high growth temperatures (~1000-1100°C) and a growth chamber specially designed to avoid premature reactions between the ammonia and gallium alkyls. Since sapphire (or 6H-SiC) and GaN are highly mismatched, direct growth of GaN is impossible. Therefore, the growth of GaN on any substrate first requires

  16. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoo, Jinyeop; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi

    2016-05-01

    We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. We hypothetically ascribe the Ga-polarity selection of GaN on the LT-GaN buffer layer to the mixed polarity of LT-GaN grains and higher growth rate of the Ga-polar grain, which covers up the N-polar grain during the initial stage of the high-temperature growth. The X-ray rocking curve analysis revealed that the edge-dislocation density in the N-polar regrown GaN is 5 to 8 times smaller than that in the Ga-polar regrown GaN. N-polar GaN grows directly on N-polar AlN at higher temperatures. Therefore, nucleus islands grow larger than those of LT-GaN and the area fraction of coalescence boundaries between islands, where edge dislocations emerge, becomes smaller.

  17. X-ray and neutron diffraction measurements of dislocation density and subgrain size in a friction stir welded aluminum alloy

    SciTech Connect

    Claussen, Bjorn; Woo, Wanchuck; Zhili, Feng; Edward, Kenik; Ungar, Tamas

    2009-01-01

    The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10{sup 14} m{sup 02} and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10{sup 15} m{sup -2} and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation.

  18. Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

    SciTech Connect

    M Dudley; N Zhang; Y Zhang; B Raghothamachar; S Byrappa; G Choi; E Drachev; M Loboda

    2011-12-31

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  19. Characterization of 100 mm diameter 4H-silicon carbide crystals with extremely low basal plane dislocation density

    SciTech Connect

    Dudley, M.; Zhang, N; Zhang, Y; Raghothamachar, B; Byrappa, S; Choi, G; Sanchez, E; Hansen, D; Drachev, R; Loboda, M

    2010-01-01

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  20. Gamma Prime Precipitation, Dislocation Densities, and TiN in Creep-Exposed Inconel 617 Alloy

    NASA Astrophysics Data System (ADS)

    Krishna, Ram; Atkinson, Helen V.; Hainsworth, Sarah V.; Gill, Simon P.

    2016-01-01

    Inconel 617 is a solid-solution-strengthened Ni-based superalloy with a small amount of gamma prime (γ') present. Here, samples are examined in the as-received condition and after creep exposure at 923 K (650 °C) for 574 hours and 45,000 hours and at 973 K (700 °C) for 4000 hours. The stress levels are intermediate (estimated, respectively, as of the order of 350, 275, and 200 MPa) and at levels of interest for the future operation of power plant. The hardness of the specimens has been measured in the gage length and the head. TEM thin foils have been obtained to quantify dislocation densities (3.5 × 1013 for the as-received, 5.0 × 1014, 5.9 × 1014, and 3.5 × 1014 lines/m2 for the creep-exposed specimens, respectively). There are no previous data in the literature for dislocation densities in this alloy after creep exposure. There is some evidence from the dislocation densities that for the creep-exposed samples, the higher hardness in the gage length in comparison with the creep test specimen head is due to work hardening rather than any other effect. Carbon replicas have been used to extract gamma prime precipitates. The morphology of γ' precipitates in the `as-received' condition was spheroidal with an average diameter of 18 nm. The morphology of these particles does not change with creep exposure but the size increases to 30 nm after 574 hours at 923 K (650 °C) but with little coarsening in 45,000 hours. At 973 K (700 °C) 4000 hours, the average gamma prime size is 32 nm. In the TEM images of the replicas, the particles overlap, and therefore, a methodology has been developed to estimate the volume fraction of gamma prime in the alloy given the carbon replica film thickness. The results are 5.8 vol pct in the as-received and then 2.9, 3.2, and 3.4 vol pct, respectively, for the creep-exposed specimens. The results are compared with predictions from thermodynamic analysis given the alloy compositions. Thermodynamic prediction shows that nitrogen

  1. Comparative study on hydrostatic strain, stress and dislocation density of Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure before and after a-Si{sub 3}N{sub 4} passivation

    SciTech Connect

    Dinara, Syed Mukulika Jana, Sanjay Kr.; Mukhopadhyay, Partha; Ghosh, Saptarsi; Bhattacharya, Sekhar; Biswas, Dhrubes

    2015-08-28

    The hydrostatic strain, stress and dislocation densities were comparatively analyzed before and after passivation of amorphous silicon nitride (a-Si{sub 3}N{sub 4}) layer on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure by nondestructive high resolution x-ray diffraction (HRXRD) technique. The crystalline quality, in-plane and out-of plane strain were evaluated from triple-axis (TA) (ω-2θ) diffraction profile across the (002) reflection plane and double-axis (DA) (ω-2θ) glancing incidence (GI) diffraction profile across (105) reflection plane. The hydrostatic strain and stress of Al{sub 0.3}Ga{sub 0.7}N barrier layer were increased significantly after passivation and both are tensile in nature. The dislocation density of GaN was also analyzed and no significant change was observed after passivation of the heterostructure. The crystalline quality was not degraded after passivation on the heterostructure confirmed by the full-width-half-maximum (FWHM) analysis.

  2. Nanopore morphology in porous GaN template and its effect on the LEDs emission

    NASA Astrophysics Data System (ADS)

    Soh, C. B.; Tay, C. B.; Tan, Rayson J. N.; Vajpeyi, A. P.; Seetoh, I. P.; Ansah-Antwi, K. K.; Chua, S. J.

    2013-09-01

    GaN grown on sapphire is electrochemically etched in HF and in KOH. Etching in HF results in a network of nanopillars while that etched in KOH results in a network of pores. The higher density of voids from the network of pores shows the highest strain relaxation for a 1.2 µm thick GaN overgrown on the porous templates. In general, a light-emitting diode (LED) on the porous templates gives about 1.5 times higher intensity and a spectral envelop shift towards the red due to a higher In incorporation. The higher intensity is attributed to enhanced light extraction due to light scattering at the voids formed from the pores and improved material quality with dislocation reduction. The formation of larger overgrowth GaN islands which merges to give a continuous GaN film over the porous template reduced the dislocation density and also accounted for higher strain relaxation for the growth of the quantum dots (QDs) and quantum well layers. This reduced the extent of peak shift of LEDs grown on porous GaN template and improved its performance.

  3. Structural defects in bulk GaN

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

    2014-10-01

    Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

  4. Effect of Epilayer Tilt on Dynamical X-ray Diffraction from Uniform Heterostructures with Asymmetric Dislocation Densities

    NASA Astrophysics Data System (ADS)

    Rago, P. B.; Jain, F. C.; Ayers, J. E.

    2013-11-01

    In this work we extend the dynamical theory of Bragg x-ray diffraction to account for a tilted, asymmetrically defected, uniform-composition epitaxial layer atop a (001) substrate. In a zincblende semiconductor there are eight active slip systems, within which two distinct types of dislocations exist. These two types are distinguished by their misfit segments, which are oriented along either the [110] or direction. The two threading dislocation densities can be measured by observing the variation of the x-ray rocking curve width with the incident beam azimuth. However, the tilting of the epilayer also has a measurable and potentially conflicting effect on the rocking curve as a function of azimuth. First, the peak position varies by (nominally) twice the layer's absolute tilt within a full azimuthal rotation. Second, the tilting of the layer affects the epilayer rocking curve width. Through use of the modified dynamical diffraction theory, we show that the peak width's azimuthal dependence on tilt is of only second order, so that the layer misorientation with respect to the substrate need not be considered for the purpose of determining the two dislocation populations by x-ray diffraction. Dynamical simulations were performed and compared with experimental measurements for a ZnSe/GaAs(001) structure grown by photoassisted metalorganic vapor-phase epitaxy, and in this way the two dislocation density populations were found to be D A = 1.6 × 108 cm-2 and D B = 2.0 × 108 cm-2.

  5. Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

    NASA Astrophysics Data System (ADS)

    Tendille, Florian; Hugues, Maxime; Vennéguès, Philippe; Teisseire, Monique; De Mierry, Philippe

    2015-06-01

    Thanks to the use of two successive selective growths by metal organic chemical vapor deposition reactor, high quality semipolar (11-22) GaN with a homogenous defect repartition over the surface was achieved. The procedure starts with a first selective growth on a patterned sapphire substrate, leading to continuous stripes of three dimensional (3D) GaN crystals of low defect density. Then, a second selective growth step is achieved by depositing a SiNx nano-mask and a low temperature GaN nano-layer on the top of the GaN stripes. Hereby, we demonstrate an original way to obtain a homoepitaxial selective growth on 3D GaN crystals by taking advantage of the different crystallographic planes available. Basal stacking faults (BSFs) are generated during this second selective growth but could be eliminated by using a three-step growth method in which elongated voids are created above the defective area. For a fully coalesced sample grown using the 2 step method, dislocation density of 1.2 × 108 cm-2 and BSFs density of 154 cm-1 with a homogenous distribution have been measured by cathodoluminescence at 80 K. Consequently the material quality of this coalesced semipolar layer is comparable to the one of polar GaN on c-plane sapphire.

  6. GaN Etch Rates Compared with Atomic Chlorine Density and Ion Flux in an Argon/Chlorine Inductively Coupled Plasma

    NASA Astrophysics Data System (ADS)

    Mahony, C. M. O.; Rizvi, S. A.; Maguire, P. D.; Garcia, F.; Graham, W. G.

    2004-09-01

    We present GaN etch rates (maximum 700nm/min), atomic chlorine densities (via Laser Induced Fluorescence at 200W RF power), positive ion densities (Langmuir probe) and positive ion wall flux (capacitive planar probe) using an Inductively Coupled Plasma as a function of chlorine in argon gas fraction from 0% to 100% at maximum RF power and pressure of 400 W and 20 mTorr respectively. In general, with chlorine addition, etch rates rise initially then tend to saturate at fractions above 50% Cl_2. Wall flux and n^+ approximate the inverse of this behaviour. The atomic chlorine density at 200W RF power rises monotonically with a pronounced inflection near 50% Cl_2. The positive ion wall flux - atomic chlorine density product strongly correlates with etch rate suggesting physical etching dominates below 50% Cl2 and chemical processes above. This is reflected in changes of the Ga/N surface stoichiometry, determined by XPS analysis.

  7. Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers

    NASA Astrophysics Data System (ADS)

    Barabash, R. I.; Barabash, O. M.; Ice, G. E.; Roder, C.; Figge, S.; Einfeldt, S.; Hommel, D.; Katona, T. M.; Speck, J. S.; Denbaars, S. P.; Davis, R. F.

    2006-01-01

    Intrinsic stresses due to lattice mismatch, high densities of threading dislocations, and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion, are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional, cantilever (CE) and in pendeo-epitaxial (PE) films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and SEM analysis have been used to determine the crystallographic properties, misfit dislocations distribution and crystallographic tilts in uncoalesced GaN layers grown by PE and CE. The crystallographic tilt between the GaN(0001) and Si(111) planes was detected in the CE grown samples on Si(111). In contrast there was no tilt between GaN(0001) and SiC(0001) planes in PE grown samples. The wings are tilted upward for both the PE and CE grown uncoalesced GaN layers.

  8. Characterization of Crystallographic Properties and Defects VIA X-ray Microdiffraction in GaN (0001) Layers

    SciTech Connect

    Barabash, Rozaliya; Barabash, Oleg M; Ice, Gene E; Roder, C.; Figge, S.; Einfeldt, S.; Hommel, D.; Katona, T. M.; Speck, J. S.; DenBaars, S. P.; Davis, R. F.

    2006-01-01

    Intrinsic stresses due to lattice mismatch, high densities of threading dislocations, and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion, are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional, cantilever (CE) and in pendeo-epitaxial (PE) films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and SEM analysis have been used to determine the crystallographic properties, misfit dislocations distribution and crystallographic tilts in uncoalesced GaN layers grown by PE and CE. The crystallographic tilt between the GaN(0001) and Si(111) planes was detected in the CE grown samples on Si(111). In contrast there was no tilt between GaN(0001) and SiC(0001) planes in PE grown samples. The wings are tilted upward for both the PE and CE grown uncoalesced GaN layers.

  9. The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei

    2009-03-01

    The defect structure of GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) depends on the growth temperature and thickness of the aluminum nitride (AlN) buffer layer. High-resolution X-ray diffraction was used to measure symmetric (0 0 0 2) and asymmetric (1 0 1¯ 2) rocking curve (ω-scans) broadening, which allowed the estimation of screw threading dislocation (TD) and edge TD densities, respectively. For GaN grown on lower-temperature buffer, the density of screw TD was increased while the density of edge TD was decreased. Further examinations revealed that the edge TD was closely related to stress in GaN film and the screw TD was controlled by AlN surface roughness. Since the GaN defect was dominated by edge TD, the total TD was also effectively suppressed with the use of lower-temperature buffer with appropriate thickness.

  10. Dislocation density analyses of multi-crystalline silicon during the directional solidification process with bottom grooved furnace

    NASA Astrophysics Data System (ADS)

    Karuppasamy, P.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2016-05-01

    A transient global model was used to investigate the effect of bottom grooved furnace upon the directional solidification (DS) process of multicrystalline silicon (mc-Si). The computations were carried out on a 2D axisymmetric model using the finite volume method. The temperature distribution, crystal-melt (c-m) interface and dislocation density were simulated. The modified heat exchanger block system was used for controlling the temperature gradient at the bottom of the crucible. The obtained results shows convex shape of the c-m interface. The dislocation density was reduced while using the bottom grooved furnace. This work was carried out for the different groove of radius 30 and 60 mm of the heat exchanger block.

  11. Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Bassim, N. D.; Twigg, M. E.; Eddy, C. R.; Henry, R. L.; Holm, R. T.; Culbertson, J. C.; Stahlbush, R. E.; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.

    2004-06-01

    Cross-sectional transmission electron microscopy and atomic force microscopy have been used to study the microstructure of a thin heteroeptiaxial GaN film grown on (0001) 4H-SiC mesa surfaces with and without atomic scale steps. Analysis of a mesa that was completely free of atomic-scale surface steps prior to III -N film deposition showed that these GaN layers had a wide variation in island height (1-3μm ) and included the presence of pit-like defects on the film surface. This sample had a low dislocation density (5×108/cm2) as compared to conventionally grown samples on unpatterned (0001) on-axis 4H-SiC (2×109/cm2), coupled with a 3-5 times increase in grain size. A comparison of a GaN film on the step-free 4H-SiC mesa region with a GaN film on a stepped 4H-SiC mesa region on the same substrate showed that the presence of surface steps reduced the overall grain size of the film from 7-10μm to a grain size of about 2-3μm. Since the GaN films grow via a Volmer-Weber mechanism, a decrease in the number of heterogeneous nucleation sites may allow the growth of large GaN islands before coalescence, thus reducing the number of threading dislocations. These results are promising for the further development of unique, low-dislocation density active regions for GaN device structures on 4H-SiC.

  12. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers

    NASA Astrophysics Data System (ADS)

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-02-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

  13. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

    PubMed

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  14. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  15. A novel unified dislocation density-based model for hot deformation behavior of a nickel-based superalloy under dynamic recrystallization conditions

    NASA Astrophysics Data System (ADS)

    Lin, Y. C.; Wen, Dong-Xu; Chen, Ming-Song; Chen, Xiao-Min

    2016-09-01

    In this study, a novel unified dislocation density-based model is presented for characterizing hot deformation behaviors in a nickel-based superalloy under dynamic recrystallization (DRX) conditions. In the Kocks-Mecking model, a new softening item is proposed to represent the impacts of DRX behavior on dislocation density evolution. The grain size evolution and DRX kinetics are incorporated into the developed model. Material parameters of the developed model are calibrated by a derivative-free method of MATLAB software. Comparisons between experimental and predicted results confirm that the developed unified dislocation density-based model can nicely reproduce hot deformation behavior, DRX kinetics, and grain size evolution in wide scope of initial grain size, strain rate, and deformation temperature. Moreover, the developed unified dislocation density-based model is well employed to analyze the time-variant forming processes of the studied superalloy.

  16. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

    NASA Astrophysics Data System (ADS)

    Zhou, Hong; Du, Yuchen; Ye, Peide D.

    2016-05-01

    Herein, we report on achieving ultra-high electron density (exceeding 1014 cm-2) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al2O3 to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 105 at room temperature. An ultra-high electron density exceeding 1014 cm-2 accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reduction of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.

  17. Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

    SciTech Connect

    Belyaev, A. E.; Boltovets, N. S.; Ivanov, V. N.; Klad'ko, V. P.; Konakova, R. V. Kudrik, Ya. Ya.; Kuchuk, A. V.; Milenin, V. V.; Sveshnikov, Yu. N.; Sheremet, V. N.

    2008-06-15

    A mechanism of charge transport in Au-TiB{sub x}-n-GaN Schottky diodes with a space charge region considerably exceeding the de Broglie wavelength in GaN is studied. Analysis of temperature dependences of current-voltage (I-V) characteristics of forward-biased Schottky barriers showed that, in the temperature range 80-380 K, the charge transport is performed by tunneling along dislocations intersecting the space charge region. Estimation of dislocation density {rho} by the I-V characteristics, in accordance with a model of tunneling along the dislocation line, gives the value {rho} {approx} 1.7 x 10{sup 7} cm{sup -2}, which is close in magnitude to the dislocation density measured by X-ray diffractometry.

  18. Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN

    NASA Astrophysics Data System (ADS)

    Hou, Qi-Feng; Wang, Xiao-Liang; Xiao, Hong-Ling; Wang, Cui-Mei; Yang, Cui-Bai; Yin, Hai-Bo; Li, Jin-Min; Wang, Zhan-Guo

    2011-03-01

    Yellow and blue luminescence in undoped GaN layers with different resistivities are studied by cathodoluminescence. Intense yellow and blue luminescence bands are observed in semi-insulating GaN, while in n-GaN the yellow luminescence and blue luminescence bands are very weak. The stronger yellow and blue luminescences in semi-insulating GaN are correlated to the higher edge-type dislocation density. The scanning cathodoluminescence image reveals strong defect-related luminescence at the grain boundaries where the dislocations accumulate. It is found that the relative intensity of the blue luminescence band to the yellow luminescence band increases with the cathodoluminescence beam energies and is larger in n-GaN with a lower density of edge-type dislocations. An approximately 3.35 eV shoulder next to the near-band-edge peak is observed in n-GaN but not in semi-insulating GaN. A redshift of the near-band-edge peak with cathodoluminescence beam energy is observed in both samples and is explained by internal absorption.

  19. Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Schenk, H. P. D.; Frayssinet, E.; Bavard, A.; Rondi, D.; Cordier, Y.; Kennard, M.

    2011-01-01

    We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium nitride and the silicon substrate, up to 6.7 μm thick crack-free group III-nitride layers have been grown. Root mean-squares surface roughness of 0.5 nm, threading dislocation densities of 1.1×10 9 cm -2, as well as X-ray diffraction (XRD) full widths at half-maximum (FWHM) of 406 arcsec for the GaN(0 0 2) and of 1148 arcsec for the GaN(3 0 2) reflection have been measured. The donor bound exciton has a low-temperature photoluminescence line width of 12 meV. The correlation between the threading dislocation density and XRD FWHM, as well as the correlation between the wafer curvature and the GaN in-plane stress is discussed. An increase of the tensile stress is observed upon n-type doping of GaN by silicon.

  20. Strain-induced step bunching in orientation-controlled GaN on Si

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  1. Reduction of stress at the initial stages of GaN growth on Si(111)

    NASA Astrophysics Data System (ADS)

    Dadgar, A.; Poschenrieder, M.; Reiher, A.; Bläsing, J.; Christen, J.; Krtschil, A.; Finger, T.; Hempel, T.; Diez, A.; Krost, A.

    2003-01-01

    GaN growth on heterosubstrates usually leads to an initially high dislocation density at the substrate/seed layer interface. Due to the initial growth from small crystallites, tensile stress is generated at the coalescence boundaries during GaN growth. In addition, with tensile thermal stress this leads to cracking of GaN on Si and SiC substrates when cooling to room temperature. By partially masking the typically applied AlN seed layer on Si(111) with an in situ deposited SiN mask a reduction in tensile stress can be achieved for the subsequently grown GaN layer. Additionally, the 6 K GaN band edge photoluminescence is increased by about an order of magnitude and shifts by 21 meV, which can be attributed to a change in tensile stress of ˜0.8 GPa, in good agreement with x-ray diffractometry measurements. This improvement in material properties can be attributed to a reduction of grain boundaries by the growth of larger sized crystallites and lateral overgrowth of less defective GaN.

  2. The Effect of Grain Size and Dislocation Density on the Tensile Properties of Ni-SiCNP Composites During Annealing

    NASA Astrophysics Data System (ADS)

    Yang, Chao; Huang, Hefei; Thorogood, Gordon James; Jiang, Li; Ye, Xiangxi; Li, Zhijun; Zhou, Xingtai

    2016-03-01

    The grain size refinement, enhancement of mechanical properties, and static recrystallization behavior of metallic nickel-silicon carbide nano-particle (Ni-3wt.%SiCNP) composites, milled for times ranging from 8 to 48 h have been examined. One set of Ni-SiCNP composite samples were annealed at 300 °C for 250 h, while the other set of samples were maintained at room temperature for control purposes (reference). The electron backscatter diffraction results indicate that the grain size of the annealed Ni-SiCNP composite was refined due to grain restructuring during static recrystallization. The x-ray diffraction results indicate that low-temperature annealing effectively reduced the density of dislocations; this can be explained by the dislocation pile-up model. Additionally, the tensile tests indicated that the annealed Ni-SiCNP composite had a significant increase in strength due to an increase of the Hall-Petch strengthening effect with a slight increase in the total elongation. The decrease of dislocation pile-up in the grain interiors and the increase in grain boundary sliding are assumed to be the main mechanisms at play. The relationship between the microstructural evolution and the variation of tensile properties is examined in this study.

  3. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  4. Global analysis of GaN growth using a solution technique

    NASA Astrophysics Data System (ADS)

    Kashiwagi, D.; Gejo, R.; Kangawa, Y.; Liu, L.; Kawamura, F.; Mori, Y.; Sasaki, T.; Kakimoto, K.

    2008-04-01

    The solution growth technique is one of the key methods for fabricating gallium nitride (GaN) wafers with small dislocation density. Since the growth rate of GaN using the solution technique is small, the key issue of the technique is to enhance the growth rate of the crystal. We studied how nitrogen is transferred from the surface of the flux to the interface between the top of the flux and the crystal in a muffle furnace using a global model that includes radiative, convective and conductive heat and mass transfer, including nitrogen transfer. The average growth rate of GaN increased when the temperature difference between the furnace wall and a crucible wall became large. This phenomenon is based on mixing of the flux due to natural convection.

  5. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.

    PubMed

    Zhernokletov, Dmitry M; Negara, Muhammad A; Long, Rathnait D; Aloni, Shaul; Nordlund, Dennis; McIntyre, Paul C

    2015-06-17

    We correlate interfacial defect state densities with the chemical composition of the Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron photoelectron emission spectroscopy (PES), cathodoluminescence and high-temperature capacitance-voltage measurements. The influence of the wet chemical pretreatments involving (1) HCl+HF etching or (2) NH4OH(aq) exposure prior to atomic layer deposition (ALD) of Al2O3 were investigated on n-type GaN (0001) substrates. Prior to ALD, PES analysis of the NH4OH(aq) treated surface shows a greater Ga2O3 component compared to either HCl+HF treated or as-received surfaces. The lowest surface concentration of oxygen species is detected on the acid etched surface, whereas the NH4OH treated sample reveals the lowest carbon surface concentration. Both surface pretreatments improve electrical characteristics of MOS capacitors compared to untreated samples by reducing the Al2O3/GaN interface state density. The lowest interfacial trap density at energies in the upper band gap is detected for samples pretreated with NH4OH. These results are consistent with cathodoluminescence data indicating that the NH4OH treated samples show the strongest band edge emission compared to as-received and acid etched samples. PES results indicate that the combination of reduced carbon contamination while maintaining a Ga2O3 interfacial layer by NH4OH(aq) exposure prior to ALD results in fewer interface traps after Al2O3 deposition on the GaN substrate. PMID:25988586

  6. Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

    NASA Astrophysics Data System (ADS)

    Svensk, O.; Ali, M.; Riuttanen, L.; Törmä, P. T.; Sintonen, S.; Suihkonen, S.; Sopanen, M.; Lipsanen, H.

    2013-05-01

    In this paper we report on the MOCVD growth and characterization of GaN structures and InGaN single quantum wells grown on pillar patterned GaN/sapphire templates. During the regrowth a network of voids was intentionally formed at the interface of sapphire substrate and GaN epitaxial layer. The regrowth process was found to decrease the threading dislocation density of the overgrown layer. The quantum well sample grown on patterned template showed significantly higher optical output in photoluminescence measurements compared to the reference sample with identical internal quantum efficiency characteristics. We attribute the increase to enhanced light extraction efficiency caused by strong scattering and redirection of light from the scattering elements.

  7. Crystallization of free standing bulk GaN by HVPE

    NASA Astrophysics Data System (ADS)

    Ucznik, B.; Pastuszka, B.; Grzegory, I.; Bokowski, M.; Kamler, G.; Domagaa, J.; Nowak, G.; Prystawko, P.; Krukowski, S.; Porowski, S.

    2006-06-01

    Gallium nitride was crystallized on 2 inch MOVPE GaN/sapphire substrates by Hydride Vapor Phase Epitaxy. A stable growth has been achieved in long duration (>10 h) processes at growth rates bigger than 100 m/h. As a result, entirely transparent and colorless bulk crystals with thickness exceeding 2 mm were obtained. The cracks in the thick HVPE GaN layers deposited on the MOVPE GaN/sapphire substrates can appear especially during cooling of the system after crystallization. It is shown that the formation of cracks at cooling is dependent on the gradients in the layer thickness The relaxation of strains in the resulting crystal coupled to the substrate leads to the self separation of GaN from sapphire. (At present 30 x 30 x 2 mm free standing bulk GaN crystals are obtained). The GaN crystals are characterized by defect selective etching (DSE) and X-ray diffraction. The density of threading dislocations (measured by DSE of (0001) surface) decreases with the thickness of the HVPE layer and becomes lower than 107 cm-2 in the layers thicker than app. 1 mm. The X-ray rocking curves for (0002) reflection (slit 0.5 x 0.1 mm) are in the range of 80-95 arcsec. However, larger scans reveal bending of crystallographic {0001} planes. The behavior of these deformed free standing crystals used as substrates for HVPE re-growth is also analyzed.

  8. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    SciTech Connect

    Kyle, Erin C. H. Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S.; Wu, Yuh-Renn

    2014-05-21

    The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

  9. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  10. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.

  11. Ab initio density functional theory study of non-polar (101{sup ¯}0), (112{sup ¯}0) and semipolar (202{sup ¯}1) GaN surfaces

    SciTech Connect

    Mutombo, P.; Romanyuk, O.

    2014-05-28

    The atomic structures of non-polar GaN(101{sup ¯}0), (112{sup ¯}0) and semipolar GaN(202{sup ¯}1), (202{sup ¯}1{sup ¯}) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1 × 1) structure with buckled Ga-N or Ga-Ga dimers was found stable on the non-polar GaN(101{sup ¯}0) surface in agreement with previous works. Ga-N heterodimers were found energetically stable on the GaN(112{sup ¯}0)-(1 × 1) surface. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN(202{sup ¯}1)-(1 × 1) surface unit cells consist of non-polar (101{sup ¯}0) and semipolar (101{sup ¯}1) nano-facets. The (101{sup ¯}1) nano-facets consist of two-fold coordinated atoms, which form N-N dimers within a (2 × 1) surface unit cell on a GaN(202{sup ¯}1) surface. Dimers are not formed on the GaN(202{sup ¯}1{sup ¯}) surface. The stability of the surfaces with single (101{sup ¯}0) or (101{sup ¯}1) nano-facets was analyzed. A single non-polar (101{sup ¯}0)-(1 × 1) nano-facet was found stable on the GaN(202{sup ¯}1) surface, but unstable on the GaN(202{sup ¯}1{sup ¯}) surface. A single (101{sup ¯}1) nano-facet was found unstable. Semipolar GaN surfaces with (202{sup ¯}1) and (202{sup ¯}1{sup ¯}) polarity can be stabilized with a Ga overlayer at Ga-rich experimental conditions.

  12. The Weighted Burgers Vector: a new quantity for constraining dislocation densities and types using electron backscatter diffraction on 2D sections through crystalline materials.

    PubMed

    Wheeler, J; Mariani, E; Piazolo, S; Prior, D J; Trimby, P; Drury, M R

    2009-03-01

    The Weighted Burgers Vector (WBV) is defined here as the sum, over all types of dislocations, of [(density of intersections of dislocation lines with a map) x (Burgers vector)]. Here we show that it can be calculated, for any crystal system, solely from orientation gradients in a map view, unlike the full dislocation density tensor, which requires gradients in the third dimension. No assumption is made about gradients in the third dimension and they may be non-zero. The only assumption involved is that elastic strains are small so the lattice distortion is entirely due to dislocations. Orientation gradients can be estimated from gridded orientation measurements obtained by EBSD mapping, so the WBV can be calculated as a vector field on an EBSD map. The magnitude of the WBV gives a lower bound on the magnitude of the dislocation density tensor when that magnitude is defined in a coordinate invariant way. The direction of the WBV can constrain the types of Burgers vectors of geometrically necessary dislocations present in the microstructure, most clearly when it is broken down in terms of lattice vectors. The WBV has three advantages over other measures of local lattice distortion: it is a vector and hence carries more information than a scalar quantity, it has an explicit mathematical link to the individual Burgers vectors of dislocations and, since it is derived via tensor calculus, it is not dependent on the map coordinate system. If a sub-grain wall is included in the WBV calculation, the magnitude of the WBV becomes dependent on the step size but its direction still carries information on the Burgers vectors in the wall. The net Burgers vector content of dislocations intersecting an area of a map can be simply calculated by an integration round the edge of that area, a method which is fast and complements point-by-point WBV calculations. PMID:19250469

  13. Ferromagnetism in GaN: Gd: A density functional theory study

    SciTech Connect

    Stevenson, Cynthia; Stevenson, Cynthia

    2008-02-04

    First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have been performed within the Generalized Gradient Approximation (GGA) of the density functional theory (DFT) with the on-site Coulomb energy U taken into account (also referred to as GGA+U). The ferromagnetic p-d coupling is found to be over two orders of magnitude larger than the s-d exchange coupling. The experimental colossal magnetic moments and room temperature ferromagnetism in GaN:Gd reported recently are explained by the interaction of Gd 4f spins via p-d coupling involving holes introduced by intrinsic defects such as Ga vacancies.

  14. Modified internal state variable models of plasticity using nonlocal integrals in damage and gradients in dislocation density

    NASA Astrophysics Data System (ADS)

    Ahad, Fazle Rabbi

    To enhance material performance at different length scales, this study strives to develop a reliable analytical and computational tool with the help of internal state variables spanning micro and macro-level behaviors. First, the practical relevance of a nonlocal damage integral added to an internal state variable (BCJ) model is studied to alleviate numerical instabilities associated within the post-bifurcation regime. The characteristic length scale in the nonlocal damage, which is mathematical in nature, can be calibrated using a series of notch tensile tests. Then the same length scale from the notch tests is used in solving the problem of a high-velocity (between 89 and 107 m/s) rigid projectile colliding against a 6061-T6 aluminum-disk. The investigation indicates that incorporating a characteristic length scale to the constitutive model eliminates the pathological mesh-dependency associated with material instabilities. In addition, the numerical calculations agree well with experimental data. Next, an effort is made rather to introduce a physically motivated length scale than to apply a mathematical-one in the deformation analysis. Along this line, a dislocation based plasticity model is developed where an intrinsic length scale is introduced in the forms of spatial gradients of mobile and immobile dislocation densities. The spatial gradients are naturally invoked from balance laws within a consistent kinematic and thermodynamic framework. An analytical solution of the model variables is derived at homogenous steady state using the linear stability and bifurcation analysis. The model qualitatively captures the formation of dislocation cell-structures through material instabilities at the microscopic level. Finally, the model satisfactorily predicts macroscopic mechanical behaviors - e.g., multi-strain rate uniaxial compression, simple shear, and stress relaxation - and validates experimental results.

  15. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    SciTech Connect

    Mokuno, Yoshiaki Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  16. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

    NASA Astrophysics Data System (ADS)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Bing; Wang, Cong; Yoon, Soon Fatt; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng

    2016-02-01

    High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Ge growth with As gradually reduced to zero at high temperature (HT, at 650 °C), (iii) pure Ge growth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Ge epitaxial film with a thickness of ˜1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Ge film.

  17. A dislocation density based crystal plasticity finite element model: Application to a two-phase polycrystalline HCP/BCC composites

    NASA Astrophysics Data System (ADS)

    Ardeljan, Milan; Beyerlein, Irene J.; Knezevic, Marko

    2014-05-01

    We present a multiscale model for anisotropic, elasto-plastic, rate- and temperature-sensitive deformation of polycrystalline aggregates to large plastic strains. The model accounts for a dislocation-based hardening law for multiple slip modes and links a single-crystal to a polycrystalline response using a crystal plasticity finite element based homogenization. It is capable of predicting local stress and strain fields based on evolving microstructure including the explicit evolution of dislocation density and crystallographic grain reorientation. We apply the model to simulate monotonic mechanical response of a hexagonal close-packed metal, zirconium (Zr), and a body-centered cubic metal, niobium (Nb), and study the texture evolution and deformation mechanisms in a two-phase Zr/Nb layered composite under severe plastic deformation. The model predicts well the texture in both co-deforming phases to very large plastic strains. In addition, it offers insights into the active slip systems underlying texture evolution, indicating that the observed textures develop by a combination of prismatic, pyramidal, and anomalous basal slip in Zr and primarily {110}<111> slip and secondly {112}<111> slip in Nb.

  18. Structural Defects in Laterally Overgrown GaN Layers Grown onNon-polar Substrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2007-02-14

    Transmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (11{und 2}0) GaN grown on (1{und 1}02) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

  19. Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells

    SciTech Connect

    France, R. M.; Geisz, J. F.; Steiner, M. A.; To, B.; Romero, M. J.; Olavarria, W. J.; King, R. R.

    2012-05-15

    Surface crosshatch roughness typically develops during the growth of lattice-mismatched compositionally graded buffers and can limit misfit dislocation glide. In this study, the crosshatch roughness during growth of a compressive GaInP/GaAs graded buffer is reduced by increasing the phosphine partial pressure throughout the metamorphic growth. Changes in the average misfit dislocation length are qualitatively determined by characterizing the threading defect density and residual strain. The decrease of crosshatch roughness leads to an increase in the average misfit dislocation glide length, indicating that the surface roughness is limiting dislocation glide. Growth rate is also analyzed as a method to reduce surface crosshatch roughness and increase glide length, but has a more complicated relationship with glide kinetics. Using knowledge gained from these experiments, high quality inverted GaInAs 1 eV solar cells are grown on a GaInP compositionally graded buffer with reduced roughness and threading dislocation density. The open circuit voltage is only 0.38 V lower than the bandgap potential at a short circuit current density of 15 mA/cm{sup 2}, suggesting that there is very little loss due to the lattice mismatch.

  20. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  1. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGESBeta

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  2. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    SciTech Connect

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D'Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  3. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

    NASA Astrophysics Data System (ADS)

    Fini, P.; Zhao, L.; Moran, B.; Hansen, M.; Marchand, H.; Ibbetson, J. P.; DenBaars, S. P.; Mishra, U. K.; Speck, J. S.

    1999-09-01

    We have characterized GaN stripes grown by lateral epitaxial overgrowth on large-area (2 in.) SiO2/GaN/Al2O3 wafers by low-pressure metalorganic chemical vapor deposition before and after coalescence. Using scanning electron microscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM), and atomic force microscope (AFM), it is shown that by first obtaining "wings" (laterally overgrown material) with low tilt relative to the "seed" (underlying) GaN, very few extended defects are formed when wings from neighboring stripes coalesce. After wings with a tilt of ˜0.1° are coalesced and an additional ˜10 μm of GaN is grown, it is found with XRD that peak splitting due to tilt is no longer detectable. TEM and AFM results show that few dislocations (with a linear density <4×103cm-1) are formed at coalescence fronts.

  4. Influence of Pb2+ ions on the morphology of etch pits and dislocation density of CaF2:YbF3 crystals

    NASA Astrophysics Data System (ADS)

    Stef, Marius; Stef, Florica; Buse, Gabriel; Nicoara, Irina

    2012-08-01

    Various concentrations YbF3 -doped CaF2 and Pb2+ - codoped crystals were grown using the conventional Bridgman method. Transparent colorless crystals were obtained in graphite crucible in vacuum (˜ 10-1 Pa) using a shaped graphite furnace. The crystals have been cooled to room temperature using an established procedure. In order to study the etch pits morphology and the dislocations density we used the chemical etching method. This method consists in immersing the cleaved sample in 4NHCl at 60°C for 5 minutes. Small pits are developed at the emergence points of the dislocations. The etch pits have hexagonal shapes for pure CaF2 crystal and triangular sahpes for doped crystals. The dislocations density depends also on the dopant or on the codopant concentration.

  5. Neutron Diffraction Measurement of Residual Stresses, Dislocation Density and Texture in Zr-bonded U-10Mo ''Mini'' Fuel Foils and Plates

    SciTech Connect

    Brown, Donald W.; Okuniewski, M. A.; Sisneros, Thomas A.; Clausen, Bjorn; Moore, G. A.; Balogh, L

    2014-08-07

    Aluminum clad monolithic uranium 10 weight percent molybdenum (U-10Mo) fuel plates are being considered for conversion of several research and test nuclear reactors from high-enriched to low-enriched uranium fuel due to the inherently high density of fissile material. Comprehensive neutron diffraction measurements of the evolution of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the HIP procedure significantly reduces the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stresses in the clad fuel plate do not depend strongly on the final processing step of the bare foil prior to HIP bonding. Rather, the residual stresses are dominated by the thermal expansion mismatch of the constituent materials of the fuel plate.

  6. Threading dislocations in gallium nitride epilayers grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Fang, Xiaolong

    Gallium nitride (GaN) epitaxial layers were deposited by metalorganic vapor phase epitaxy on (0001) sapphire. A new approach involving silicon nitride (Si3N4) interlayers deposited on as-grown nucleation layers (NLs) was demonstrated for reducing the density of threading dislocations (TDs). By inserting the Si3N4 interlayer, the metamorphosis of the NL upon thermal annealing was significantly changed as compared to that without the Si3N4 interlayer. Surface roughening upon thermal annealing produced a small number of protrusions from the NLs breaking through the Si3N4 interlayer. Initial GaN overgrowth could then be confined to the exposed protrusions, ensuring a selective area growth mode similar to the epitaxial lateral overgrowth (ELOG) technique. This new technique is referred to as "in situ patterning ELOG". The TD density has been reduced by one to two orders of magnitude as compared to the two-step growth. The improvement of crystal quality was also confirmed by X-ray diffraction and photoluminescence measurements. A comprehensive investigation of morphology and microstructure evolution in GaN NLs and early stage GaN overgrowths was carried out in order to understand the mechanisms of generation and reduction of TDs. Annealed NLs in Si 3N4/GaN NL composites consist of discrete grains with very high density of basal plane stacking faults. The majority of edge dislocations (Burgers vector 1/3<11--20>) emerging from the exposed regions can be generated by reactions in which a Shockley partial dislocation bounding a stacking fault creates a perfect dislocation and another Shockley partial dislocation. These perfect dislocations can bend to form vertical dislocations (VDs) when vertical growth dominates then bend back to from horizontal dislocations (HDs) once lateral overgrowth dominates. Dislocation bending occurs as a result of glide and climb in the presence of stresses and point defects during the early stage of high temperature overgrowth. A significant

  7. X-Ray and Neutron Diffraction Measurements of Dislocation Density and Subgrain Size in a Friction-Stir-Welded Aluminum Alloy

    SciTech Connect

    Woo, Wan Chuck; Ungar, Prof Tomas; Feng, Zhili; Kenik, Edward A; Clausen, B

    2009-01-01

    The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10{sup 14} m{sup -2} and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10{sup 15} m{sup -2} and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation.

  8. X-Ray and Neutron Diffraction Measurements of Dislocation Density and Subgrain Size in a Friction-Stir-Welded Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Woo, Wanchuck; Ungár, Tamás; Feng, Zhili; Kenik, Edward; Clausen, Bjørn

    2010-05-01

    The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 × 1014 m-2 and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 × 1015 m-2 and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation.

  9. Statistical characterization of dislocation ensembles

    SciTech Connect

    El-Azab, A; Deng, J; Tang, M

    2006-05-17

    We outline a method to study the spatial and orientation statistics of dynamical dislocation systems by modeling the dislocations as a stochastic fiber process. Statistical measures have been introduced for the density, velocity, and flux of dislocations, and the connection between these measures and the dislocation state and plastic distortion rate in the crystal is explained. A dislocation dynamics simulation model has been used to extract numerical data to study the evolution of these statistical measures numerically in a body-centered cubic crystal under deformation. The orientation distribution of the dislocation density, velocity and dislocation flux, as well as the dislocation correlations have been computed. The importance of the statistical measures introduced here in building continuum models of dislocation systems is highlighted.

  10. Improvement of optical quality of semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Monavarian, Morteza; Izyumskaya, Natalia; Müller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaliy

    2016-04-01

    Among the major obstacles for development of non-polar and semipolar GaN structures on foreign substrates are stacking faults which deteriorate the structural and optical quality of the material. In this work, an in-situ SiNx nano-network has been employed to achieve high quality heteroepitaxial semipolar (11 2 ¯ 2 ) GaN on m-plane sapphire with reduced stacking fault density. This approach involves in-situ deposition of a porous SiNx interlayer on GaN that serves as a nano-mask for the subsequent growth, which starts in the nanometer-sized pores (window regions) and then progresses laterally as well, as in the case of conventional epitaxial lateral overgrowth (ELO). The inserted SiNx nano-mask effectively prevents the propagation of defects, such as dislocations and stacking faults, in the growth direction and thus reduces their density in the overgrown layers. The resulting semipolar (11 2 ¯ 2 ) GaN layers exhibit relatively smooth surface morphology and improved optical properties (PL intensity enhanced by a factor of 5 and carrier lifetimes by 35% to 85% compared to the reference semipolar (11 2 ¯ 2 ) GaN layer) which approach to those of the c-plane in-situ nano-ELO GaN reference and, therefore, holds promise for light emitting and detecting devices.

  11. Structural and optical properties of Cr-doped semi-insulating GaN epilayers

    SciTech Connect

    Mei, F.; Wu, K. M.; Pan, Y.; Han, T.; Liu, C.; Gerlach, J. W.; Rauschenbach, B.

    2008-09-15

    The properties of Cr-doped GaN epilayers grown by rf-plasma-assisted molecular beam epitaxy were studied. The deep acceptor nature of Cr was used to grow semi-insulating GaN epilayers on sapphire substrates for electronic device applications. The room-temperature (RT) sheet resistivity of the epilayers reached 10{sup 10} {omega}/square. The activation energy of dark conductivity was about 0.48 eV. Step-graded Al{sub x}Ga{sub 1-x}N/GaN (x=0.3-0.2) superlattices (SLs) were designed to filter dislocations. Transmission electron microscopy images showed that the SLs can dramatically reduce dislocation density. Al{sub 0.35}Ga{sub 0.65}N/GaN heterostructure grown on Cr-doped semi-insulating GaN epilayer exhibited a RT mobility of 960 cm{sup 2}/V s and sheet carrier density of 2.1x10{sup 13} cm{sup -2}.

  12. Luminescence properties of defects in GaN

    SciTech Connect

    Reshchikov, Michael A.; Morkoc, Hadis

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of

  13. Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC

    NASA Astrophysics Data System (ADS)

    Koleske, D. D.; Henry, R. L.; Twigg, M. E.; Culbertson, J. C.; Binari, S. C.; Wickenden, A. E.; Fatemi, M.

    2002-06-01

    GaN electronic properties are shown to depend on the AlN nucleation layer (NL) growth temperature for GaN films grown on 6H- and 4H-SiC. Using identical GaN growth conditions except AlN NL growth temperature, 300 K electron mobilities of 876, 884, and 932 cm2/Vs were obtained on 6H-SiC, 4H-SiC, and 3.5deg off-axis 6H-SiC. An AlN NL temperature of 1080 degC was used for the planar and 3.5deg off-axis 6H-SiC, while an AlN NL temperature of 980 degC was used for 4H-SiC. Atomic force microscope images of the AlN NL grown at 1080 degC reveal smaller AlN grains on the 6H-SiC than those on 4H-SiC, suggesting that the AlN morphology influences GaN film formation and subsequent electron mobility. Transmission electron microscope cross section measurements reveal the absence of screw dislocations in the AlN and a low screw dislocation density near the AlN/GaN interface, consistent with the high electron mobilities achieved in these films.

  14. Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

    SciTech Connect

    Klad'ko, V. P.; Chornen'kii, S. V.; Naumov, A. V. Komarov, A. V.; Tacano, M.; Sveshnikov, Yu. N.; Vitusevich, S. A.; Belyaev, A. E.

    2006-09-15

    Overall characterization of the GaN and AlGaN/GaN epitaxial layers by X-ray diffractometry and optical spectral analysis is carried out. The layers are grown by metalloorganic gas-phase epitaxy on (0001)-oriented single crystal sapphire wafers. The components of strains and the density of dislocations are determined. The effects of strains and dislocations on the photoluminescence intensity and spectra are studied. The results allow better understanding of the nature and mechanisms of the formation of defects in the epitaxial AlGaN/GaN heterostructures.

  15. Dislocation-related trap levels in nitride-based light emitting diodes

    SciTech Connect

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-05-26

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  16. Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model

    NASA Astrophysics Data System (ADS)

    Gao, B.; Kakimoto, K.

    2014-01-01

    To dynamically model the plastic deformation of 4H-SiC single crystals during physical vapor transport (PVT) growth, the Alexander-Haasen model, originally proposed for the elemental semiconductor, is extended into IV-IV compound semiconductors. By fitting the model parameters to the experimental data, we show that the Alexander-Haasen model can describe the plastic deformation of 4H-SiC single crystals if the activation of the carbon-core partial dislocation is modeled in the high-temperature region (above 1000 °C) and the silicon-core partial dislocation is modeled in the low-temperature region (below 1000 °C). We then apply the same model to the dynamical deformation process of a 4H-SiC single crystal during PVT growth. The time evolution of the dislocation density is shown, and the effects of the cooling time on the final dislocation density, residual stress and stacking faults are also examined.

  17. Effects of dislocation density and sample-size on plastic yielding at the nanoscale: a Weibull-like framework

    NASA Astrophysics Data System (ADS)

    Rinaldi, Antonio

    2011-11-01

    Micro-compression tests have demonstrated that plastic yielding in nanoscale pillars is the result of the fine interplay between the sample-size (chiefly the diameter D) and the density of bulk dislocations ρ. The power-law scaling typical of the nanoscale stems from a source-limited regime, which depends on both these sample parameters. Based on the experimental and theoretical results available in the literature, this paper offers a perspective about the joint effect of D and ρ on the yield stress in any plastic regime, promoting also a schematic graphical map of it. In the sample-size dependent regime, such dependence is cast mathematically into a first order Weibull-type theory, where the power-law scaling the power exponent β and the modulus m of an approximate (unimodal) Weibull distribution of source-strengths can be related by a simple inverse proportionality. As a corollary, the scaling exponent β may not be a universal number, as speculated in the literature. In this context, the discussion opens the alternative possibility of more general (multimodal) source-strength distributions, which could produce more complex and realistic strengthening patterns than the single power-law usually assumed. The paper re-examines our own experimental data, as well as results of Bei et al. (2008) on Mo-alloy pillars, especially for the sake of emphasizing the significance of a sudden increase in sample response scatter as a warning signal of an incipient source-limited regime.

  18. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  19. Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin-An; Xue, Jun-Shuai; Cao, Rong-Tao; Xu, Sheng-Rui; Zhang, Jin-Cheng; Hao, Yue

    2014-06-01

    We report on an improvement in the crystal quality of GaN film with an In0.17Al0.83N interlayer grown by pulsed metal—organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations (TDs) in GaN film with the InAlN interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy (TEM) measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InAlN interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InAlN interlayer. Atomic force microscopy measurement shows that the InAlN interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InAlN interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.

  20. Study of methods to increase cluster/dislocation loop densities in electrodes

    NASA Astrophysics Data System (ADS)

    Yang, Xiaoling; Miley, George H.

    2009-03-01

    Recent research has developed a technique for imbedding ultra-high density deuterium ``clusters'' (50 to 100 atoms per cluster) in various metals such as Palladium (Pd), Beryllium (Be) and Lithium (Li). It was found the thermally dehydrogenated PdHx retained the clusters and exhibited up to 12 percent lower resistance compared to the virginal Pd samplesootnotetextA. G. Lipson, et al. Phys. Solid State. 39 (1997) 1891. SQUID measurements showed that in Pd these condensed matter clusters approach metallic conditions, exhibiting superconducting propertiesootnotetextA. Lipson, et al. Phys. Rev. B 72, 212507 (2005ootnotetextA. G. Lipson, et al. Phys. Lett. A 339, (2005) 414-423. If the fabrication methods under study are successful, a large packing fraction of nuclear reactive clusters can be developed in the electrodes by electrolyte or high pressure gas loading. This will provide a much higher low-energy-nuclear- reaction (LENR) rate than achieved with earlier electrodeootnotetextCastano, C.H., et al. Proc. ICCF-9, Beijing, China 19-24 May, 2002..

  1. Deep GaN etching by inductively coupled plasma and induced surface defects

    SciTech Connect

    Ladroue, J.; Meritan, A.; Boufnichel, M.; Lefaucheux, P.; Ranson, P.; Dussart, R.

    2010-09-15

    GaN etching was studied in Cl{sub 2}/Ar plasmas as a function of process parameters. In addition, for a better understanding of the etching mechanisms, Langmuir probe measurements and optical emission spectroscopy were carried out. Etch rate was found to depend strongly on bias power. After optimization, an etch rate greater than 1000 nm/min was achieved. A second part of this work is dedicated to the etched surface defects. An original method to estimate GaN dislocation density and to localize nanopipes in the material is presented. Columnar defects could also appear with impurities in the etching reactor. The authors also present a possible formation mechanism of those columnar defects.

  2. Ammonothermal bulk GaN substrates for LEDs

    NASA Astrophysics Data System (ADS)

    Jiang, W.; Ehrentraut, D.; Kamber, D. S.; Downey, B. C.; Cook, J.; Grundmann, M.; Pakalapati, R. T.; Yoo, H.; D'Evelyn, M. P.

    2014-02-01

    Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost. Soraa's patented approach, known as SCoRA (Scalable Compact Rapid Ammonothermal) utilizes internal heating to circumvent the material-property limitations of conventional ammonothermal reactors. The SCoRA reactor has capability for temperatures and pressures greater than 650 °C and 500 MPa, respectively, enabling higher growth rates than conventional ammonothermal techniques, yet is less expensive and more scalable than conventional autoclaves fabricated from nickel-based superalloys. SCoRA GaN growth has been performed on c-plane and m-plane seed crystals with diameters between 5 mm and 2" to thicknesses of 0.5-4 mm. The highest growth rates are greater than 40 μm/h and rates in the 10-30 μm/h range are routinely observed. These values are significantly larger than those achieved by conventional ammonothermal GaN growth and are sufficient for a cost-effective manufacturing process. Two-inch diameter, crack-free, free-standing, n-type bulk GaN crystals have been grown. The crystals have been characterized by a range of techniques, including x-ray diffraction rocking-curve (XRC) analysis, optical microscopy, cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is very good, with FWHM values of 15-80 arc-sec and average dislocation densities below 5 x 105 cm-2.

  3. Study by electron holography on the distribution of the electrostatic potential and charge at heterostructures and dislocations

    NASA Astrophysics Data System (ADS)

    Cai, Juan

    2003-03-01

    Electron holography is able to record the phase of an electron wave passing through the specimens by producing an interference pattern between the sampling electron beam and a reference beam traveling through vacuum. The electrostatic potential in the specimen can be derived from the recorded phase information, and the charge density can be determined by use of Poisson's equation. We have applied electron holography to analyze the potential and charge distribution across InGaN single quantum wells; and in threading dislocations in GaN film with different doping conditions. In_xGa_1-xN quantum wells are often used in the active region of short wavelength light emitting diodes and laser diodes. Strong internal electric fields (in the order of MV/cm) influence the electronic properties and the light emission process of InGaN quantum wells. We have used electron holography to directly profile the potential and charge distribution across a GaN/In_0.18Ga_0.82N/GaN quantum well structure. The potential profiles show a drop of 0.6 0.2 V across, and an internal electric field of 2.2 0.6 MV/cm in the quantum well. An analysis based on Poisson's equation suggests that the field is caused by electronic charges with a peak density of 8 x 10^20 cm-3, corresponding to a sheet charge density of 0.027 C/m^2. Free electrons and holes in the order of 10^20 cm-3 are confined separately in the quantum well. These free carriers screen only part of the electric field due to the polarization effect. High density of threading dislocations in GaN may degrade the optical and electrical performance of devices. The electronic properties of the threading dislocations in GaN with different doping conditions have been studied using electron holography. Potential profiles across dislocations in undoped GaN show that all dislocations are negatively charged. The line charge density at the dislocation core, defined as the number of electrons per period along the dislocation line, is found to be ˜ 0

  4. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  5. High optical and structural quality of GaN epilayers grown on (2{sup ¯}01) β-Ga{sub 2}O{sub 3}

    SciTech Connect

    Muhammed, M. M.; Roqan, I. S.; Peres, M.; Franco, N.; Lorenz, K.; Yamashita, Y.; Morishima, Y.; Sato, S.; Kuramata, A.

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼10{sup 8 }cm{sup −2}. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2{sup ¯}01) β-Ga{sub 2}O{sub 3} with in-plane epitaxial orientation relationships between the β-Ga{sub 2}O{sub 3} and the GaN thin film defined by (010) β-Ga{sub 2}O{sub 3} || (112{sup ¯}0) GaN and (2{sup ¯}01) β-Ga{sub 2}O{sub 3} || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high.

  6. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  7. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-05-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  8. Supersonic Dislocation Bursts in Silicon

    PubMed Central

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-01-01

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 × 1012 cm−2 within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon. PMID:27264746

  9. Supersonic Dislocation Bursts in Silicon

    DOE PAGESBeta

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-06-06

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolutionmore » we successfully predict a dislocation density of 1.5 x 10(12) cm(-2) within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.« less

  10. Supersonic Dislocation Bursts in Silicon.

    PubMed

    Hahn, E N; Zhao, S; Bringa, E M; Meyers, M A

    2016-01-01

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 × 10(12) cm(-2) within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon. PMID:27264746

  11. Supersonic Dislocation Bursts in Silicon

    NASA Astrophysics Data System (ADS)

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-06-01

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 × 1012 cm‑2 within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.

  12. Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

    SciTech Connect

    Cho, Yong-Hee Shim, Mun-Bo; Hwang, Sangheum; Kim, Sungjin; Kim, Jun-Youn; Kim, Jaekyun; Park, Young-Soo; Park, Seoung-Hwan

    2013-12-23

    It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result.

  13. Coupling the Phase Field Method for diffusive transformations with dislocation density-based crystal plasticity: Application to Ni-based superalloys

    NASA Astrophysics Data System (ADS)

    Cottura, M.; Appolaire, B.; Finel, A.; Le Bouar, Y.

    2016-09-01

    A phase field model is coupled to strain gradient crystal plasticity based on dislocation densities. The resulting model includes anisotropic plasticity and the size-dependence of plastic activity, required when plasticity is confined in region below few microns in size. These two features are important for handling microstructure evolutions during diffusive phase transformations that involve plastic deformation occurring in confined areas such as Ni-based superalloys undergoing rafting. The model also uses a storage-recovery law for the evolution of the dislocation density of each glide system and a hardening matrix to account for the short-range interactions between dislocations. First, it is shown that the unstable modes during the morphological destabilization of a growing misfitting circular precipitate are selected by the anisotropy of plasticity. Then, the rafting of γ‧ precipitates in a Ni-based superalloy is investigated during [100] creep loadings. Our model includes most of the important physical phenomena accounted for during the microstructure evolution, such as the presence of different crystallographic γ‧ variants, their misfit with the γ matrix, the elastic inhomogeneity and anisotropy, the hardening, anisotropy and viscosity of plasticity. In agreement with experiments, the model predicts that rafting proceeds perpendicularly to the tensile loading axis and it is shown that plasticity slows down significantly the evolution of the rafts.

  14. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

    NASA Astrophysics Data System (ADS)

    Lochner, Zachary; Jin Kim, Hee; Lee, Yi-Che; Zhang, Yun; Choi, Suk; Shen, Shyh-Chiang; Doug Yoder, P.; Ryou, Jae-Hyun; Dupuis, Russell D.

    2011-11-01

    Data and analysis are presented for NpN-GaN/InGaN/GaN double-heterojunction bipolar transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in comparison to that on a sapphire substrate to investigate the effect of dislocations in III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN exhibit a maximum collector current density of ˜12.3 kA/cm2, dc current gain of ˜90, and maximum differential gain of ˜120 without surface passivation, representing a substantial improvement over similar devices grown on sapphire. This is attributed to the reduction in threading dislocation density afforded by using a homoepitaxial growth on a high-crystalline-quality substrate. The minority carrier diffusion length increases significantly owing to not only a mitigated carrier trap effect via fewer dislocations, but also possibly reduced microscopic localized states.

  15. Defect reduction in (112_O) a-plane GaN by two-stage epitaxiallateral overgrowth

    SciTech Connect

    Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A.A.; Morkoc, H.; Liliental-Weber, Z.

    2006-10-20

    In the epitaxial lateral overgrowth (ELO) of (11{bar 2}0) a-plane GaN, the uneven growth rates of two opposing wings, Ga- and N-wings, makes the coalescence of two neighboring wings more difficult than that in c-plane GaN. We report a two-stage growth method to get uniformly coalesced epitaxial lateral overgrown a-plane GaN using metalorganic chemical vapor deposition (MOCVD) by employing relatively lower growth temperature in the first step followed by enhanced lateral growth in the second. Using this method, the height differences between Ga-polar and N-polar wings at the coalescence front could be reduced, thereby making the coalescence of two wings much easier. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing areas was 1.0x10{sup 8}cm{sup -2}, more than two orders of magnitude lower than that in the window areas (4.2x10{sup 10}cm{sup -2}). However, high density of basal stacking faults of 1.2x104 cm-1 was still observed in the wing areas as compared to c-plane GaN. Atomic force microscopy and photoluminescence measurements on the coalesced ELO a-GaN sample also indicated improved material quality.

  16. Bandgap engineering of GaN nanowires

    NASA Astrophysics Data System (ADS)

    Ming, Bang-Ming; Wang, Ru-Zhi; Yam, Chi-Yung; Xu, Li-Chun; Lau, Woon-Ming; Yan, Hui

    2016-05-01

    Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, while it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.

  17. Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Bai, J.; Hou, Y.; Smith, R. M.; Yu, X.; Gong, Y.; Wang, T.

    2016-02-01

    We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO2 mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

  18. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

    SciTech Connect

    Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T.

    2013-03-11

    (1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

  19. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

    NASA Astrophysics Data System (ADS)

    Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T.

    2013-03-01

    (1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 μm occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

  20. Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

    PubMed Central

    Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Frentrup, Martin; Kappers, Menno J; Humphreys, Colin J; Kozlowski, Grzegorz; Maaskant, Pleun; Corbett, Brian

    2015-01-01

    We report on the growth of semi-polar GaN (112) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 m were realised without cracks in the layer. Transmission electron microscopy showed that most dislocations propagate along [0001] direction and hence can be covered by overgrowth from the next trench. The defect densities were below and stacking fault densities less than 100 cm . These numbers are similar to reports on patterned r-plane sapphire. Typical X-ray full width at half maximum (FHWM) were 500” for the asymmetric (00.6) and 450” for the (11.2) reflection. These FHWMs were 50 % broader than reported for patterned r-plane sapphire which is attributed to different defect structures and total thicknesses. The surface roughness shows strong variation on templates. For the final surface roughness the roughness of the sidewalls of the GaN ridges at the time of coalescence are critical. PMID:26212392

  1. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

    NASA Astrophysics Data System (ADS)

    Kojima, Kazunobu; Tsukada, Yusuke; Furukawa, Erika; Saito, Makoto; Mikawa, Yutaka; Kubo, Shuichi; Ikeda, Hirotaka; Fujito, Kenji; Uedono, Akira; Chichibu, Shigefusa F.

    2015-09-01

    An m-plane freestanding GaN substrate satisfying both low resistivity (ρ = 8.5 × 10-3 Ω·cm) and a low point-defect concentration, being applicable to vertically conducting power-switching devices, was grown by hydride vapor phase epitaxy on a nearly bowing-free bulk GaN seed wafer synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer. Its threading dislocation and basal-plane staking-fault densities were approximately 104 cm-2 and lower than 100 cm-1, respectively. A record-long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission, reflecting a significantly low concentration of nonradiative recombination centers composed of Ga vacancies.

  2. Subtalar dislocation

    SciTech Connect

    El-Khoury, G.Y.; Yousefzadeh, D.K.; Mulligan, G.M.; Moore, T.E.

    1982-05-01

    Over a period of three years we have seen nine patients with subtalar dislocation, all of whom sustained violent trauma to the region of the ankle and hind foot. All but one patient were males. Clinically a subtalar dislocation resembles a complicated fracture dislocation of the ankle but a definitive diagnosis can only be made radiographically. The mechanism of injury and radiographic features of this injury are discussed.

  3. Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE

    NASA Astrophysics Data System (ADS)

    Bouzidi, M.; Benzarti, Z.; Halidou, I.; Chine, Z.; Bchetnia, A.; El Jani, B.

    2015-08-01

    GaN films were grown on silicon nitride (SiN) treated c-plane sapphire substrates in a home-made vertical reactor by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). In order to obtain different thickness layers, the growth procedure was interrupted at diverse stages using in-situ laser reflectometry. The structural and optical properties of obtained samples were investigated by high resolution X-ray diffraction (HRXRD) and photoreflectance (PR). In the 0.7-2 μm epilayer thickness range, the dislocation density decreases and remains roughly constant above this range. For fully coalesced layers, PR measurements at 11 K reveal the presence of well resolved excitonic transitions related to A, B and C excitons. A strong correlation between dislocation density and exciton linewidths is observed. Based on theoretical approaches and experimental results, the electronic band structure modification of GaN films due to isotropic biaxial strain was investigated. The valence band deformation potentials D3 and D4, interband hydrostatic deformation potentials a1 and a2, spin-orbit Δso and crystal field Δcr parameters were re-examined and found to be 8.2 eV, -4.1 eV, -3.8 eV, -12 eV, 15.6 meV and 16.5 meV, respectively.

  4. Dislocation core structures in (0001) InGaN

    NASA Astrophysics Data System (ADS)

    Rhode, S. L.; Horton, M. K.; Sahonta, S.-L.; Kappers, M. J.; Haigh, S. J.; Pennycook, T. J.; McAleese, C.; Humphreys, C. J.; Dusane, R. O.; Moram, M. A.

    2016-03-01

    Threading dislocation core structures in c-plane GaN and InxGa1-xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1-xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1-xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1-xN, consistent with predictions from atomistic Monte Carlo simulations.

  5. Hydride vapor phase epitaxy of high quality {101¯3¯} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres

    NASA Astrophysics Data System (ADS)

    Yang, Jiankun; Wei, Tongbo; Huo, Ziqiang; Hu, Qiang; Zhang, Yonghui; Duan, Ruifei; Wang, Junxi

    2014-02-01

    Semipolar {101¯3¯} GaN layers were grown on self-assembled SiO2 nanospheres sapphire (SSNS) by hydride vapor phase epitaxy. The RMS roughness was 1.1 nm for the scan of 20×20 µm2 and the striated surface morphology almost disappeared. The full widths at half maximum of on-axis X-ray rocking curves were 324 arcsec rocking toward the [303¯2¯] direction and 413 arcsec rocking toward the [12¯10] direction, respectively. Compared to the GaN layer grown on the planar sapphire, the reduction of the defect density of semi-GaN grown on SSNS, such as basal stacking faults, partial dislocations and perfect dislocations, was demonstrated by both X-ray rocking curves and low-temperature photoluminescence. In addition, the Raman analyses also showed the partial relaxation of the stress using SSNS.

  6. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    SciTech Connect

    Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

    2005-03-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  7. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  8. Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

    NASA Astrophysics Data System (ADS)

    Lee, Sanghwa; Choe, Hyeokmin; Oh, Taegeon; Jean, Jai Weon; Shin, Boa; Sohn, Yuri; Kim, Chinkyo; Choi, Jaewan; Moon, Yong-Tae; Lee, Jeong Soo

    2007-04-01

    With no low-temperature nucleation layers, heteroepitaxial GaN films were grown at 1050°C on c-plane sapphire substrates by hydride vapor phase epitaxy. Not like for the films grown on low-temperature buffer layers, upon island merging no immediate smoothing of a surface was observed, but through several intermediate stages the surface morphology evolved from three-dimensional islands to terrace-and-step structures. From synchrotron x-ray diffraction measurements, it was revealed that the density of screw-or mixed-type threading dislocations greatly increased when the islands merged, but that of edge-type dislocations did not (edge-type threading dislocations are known to be dominantly formed in the GaN films grown on low-temperature buffer layers). This implies that the evolution of surface morphology sensitively depends on the type of threading dislocations introduced during island merging. Despite the absence of intentional nucleation layers, the strain was found to be fully relaxed even before the nucleated islands began to merge.

  9. Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In_2 O_3 Nanostructures

    NASA Astrophysics Data System (ADS)

    Soleimanian, Vishtasb; Ghasemi Varnamkhasti, Mohsen

    2016-06-01

    In this research, high-quality Sn doped indium oxide (ITO) thin films were grown on glass slide substrates using an electron beam evaporation method. Vacuum chamber partial pressure was changed and the electro-optical as well as the microstructure parameters were investigated. The microstructure of prepared films was evaluated by x-ray diffraction analysis in terms of crystallite size and dislocation density. It was found that the best results [high transparency (88%) over the visible wavelength region, low sheet resistance of 12.8 Ω /square, the optical band gap of 3.76 eV, crystallite size of 49.5 nm and dislocation density of 1.42 × 10^{14} m^{-2} ] were achieved for the sample produced at a partial pressure of 1 × 10^{-4} mbar. Therefore, one can successfully control the physical properties of ITO films by varying the oxygen content of the evaporation system. The correlation between the band gap and carrier concentration in addition to the average crystallite size of films was also established.

  10. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.