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Sample records for donor impurity states

  1. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

    SciTech Connect

    Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2014-06-07

    We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.

  2. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

    NASA Astrophysics Data System (ADS)

    Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2014-06-01

    We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.

  3. Binding energy of the ground and first few excited states of hydrogenic donor impurity in a rectangular GaAs quantum dot in the presence of electric field

    NASA Astrophysics Data System (ADS)

    Wang, Sheng; Kang, Yun; Li, Xian-Li

    2014-12-01

    Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first 9 excited-state binding energies of a hydrogenic donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. The analytical form of the quasi-one-dimensional effective potential replacing the three-dimensional Coulomb potential in our model is derived by Fourier transforms. We discuss detailedly dependence of the binding energies on the impurity positions and electric fields. For the ground-state binding energy, our results qualitatively agree with that of Mendoza et al. (2005) in which they only calculated the ground-state binding energies in cubic quantum dots by variational method. However, for first 9 excited-state binding energies, such dependence has complex manner since there are two or three peaks in the electronic probability density distribution curves. The strengths and positions of these peaks in RQD affect the interaction potential between electron and impurity, which appears to be the critical control on the binding energies of impurity. The applied electric field pushes the positions of these peaks downwards, and the strengths of peaks located at the upper half of RQD increase while the strengths of lower peaks firstly decrease, then increase with increasing electric field. The high peak strength can lead to increase of the binding energy while the large distance between the position of peak and impurity center results in reduce of the energy, which is an interesting competition. This competition is more obvious for excited-state binding energies of off-central impurity.

  4. Spin relaxation via exchange with donor impurity-bound electrons

    NASA Astrophysics Data System (ADS)

    Qing, Lan; Li, Jing; Appelbaum, Ian; Dery, Hanan

    2015-06-01

    At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally injected conduction electrons accelerated by electric fields can excite transitions within the manifold of these localized states. Promotion of the bound electron into highly spin-orbit-mixed excited states drives a strong spin relaxation of the conduction electrons via exchange interactions, reminiscent of the Bir-Aronov-Pikus process where exchange occurs with valence band hole states. Through low-temperature experiments with silicon spin transport devices and complementary theory, we reveal the consequences of this spin depolarization mechanism both below and above the impact ionization threshold.

  5. Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects

    NASA Astrophysics Data System (ADS)

    Restrepo, R. L.; Giraldo, E.; Miranda, G. L.; Ospina, W.; Duque, C. A.

    2009-12-01

    The combined effects of the hydrostatic pressure and in-growth direction applied electric field on the binding energy of hydrogenic shallow-donor impurity states in parallel-coupled-GaAs- Ga1-xAlxAs-quantum-well wires are calculated using a variational procedure within the effective-mass and parabolic-band approximations. Results are obtained for several dimensions of the structure, shallow-donor impurity positions, hydrostatic pressure, and applied electric field. Our results suggest that external inputs such us hydrostatic pressure and in-growth direction electric field are two useful tools in order to modify the binding energy of a donor impurity in parallel-coupled-quantum-well wires.

  6. Tight-Binding Description of Impurity States in Semiconductors

    ERIC Educational Resources Information Center

    Dominguez-Adame, F.

    2012-01-01

    Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calculate the energy of carriers bound to donors or acceptors in semiconductors. This model treats the pure semiconductor as a homogeneous medium and the impurity is represented as a fixed point charge. This approach is only valid for shallow impurities…

  7. Rashba spin splitting in quantum nanowires in the presence of hydrogenic donor impurity

    NASA Astrophysics Data System (ADS)

    Safaei, Y.; Davatolhagh, S.; Golshan, M. M.

    2013-12-01

    The electronic subband states in the presence of hydrogenic donor impurity in quantum nanowires at the interface of semiconductor heterostructures devoid of structural inversion symmetry, are modeled and described in terms of a quasi-one-dimensional hydrogen atom with Rashba spin-orbit coupling. The energy levels and the spin-dependent subband states of the corresponding one-electron Schrodinger equation, are obtained using a two-step analytic solution as a function of the width L of the nanowire and the strength of the Rashba spin-orbit coupling α. The results thus obtained are checked against purely perturbative calculations in the limit of small spin-orbit coupling. In particular, it is found that the level splitting in a suitable range of the control parameters, L and α, results in spin-dependent electronic states of negative energy (bound states) as well as positive energy (scattering states). This novel result is of considerable interest for the generation of spin currents in the presence of hydrogenic donor impurity, as electrons in the scattering states can contribute to a spin current while those in the bound states tend to remain bound to the hydrogenic impurity.

  8. Nonlinear optical response in a zincblende GaN cylindrical quantum dot with donor impurity center

    NASA Astrophysics Data System (ADS)

    Hoyos, Jaime H.; Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2016-03-01

    We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quantum dot. For this purpose, we consider Coulomb interactions between electrons and an impurity ionized donor atom. The electron-donor-impurity spectrum and the associated quantum states are calculated using the effective mass approximation with a parabolic potential energy model describing both the radial and axial electron confinement. We also include the effects of the hydrostatic pressure and external electrostatic fields. The energy spectrum is obtained through an expansion of the eigenstates as a linear combination of Gaussian-type functions which reduces the computational effort since all the matrix elements are obtained analytically. Therefore, the numerical problem is reduced to the direct diagonalization of the Hamiltonian. The obtained energies are used in the evaluation of the dielectric susceptibility and the nonlinear optical absorption coefficient within a modified two-level approach in a rotating wave approximation. This quantity is investigated as a function of the quantum dot dimensions, the impurity position, the external electric field intensity and the hydrostatic pressure. The results of this research could be important in the design and fabrication of zincblende GaN-quantum-dot-based electro-optical devices.

  9. Donor impurity in vertically-coupled quantum-dots under hydrostatic pressure and applied electric field

    NASA Astrophysics Data System (ADS)

    Duque, C. M.; Barseghyan, M. G.; Duque, C. A.

    2010-02-01

    In this work we make a predictive study on the binding energy of the ground state for hydrogenic donor impurity in vertically-coupled quantum-dot structure, considering the combined effects of hydrostatic pressure and in growth-direction applied electric field. The approach uses a variational method within the effective mass approximation. The low dimensional structure consists of three cylindrical shaped GaAs quantum-dots, grown in the z-direction and separated by Ga1-xAlxAs barriers. In order to include the pressure dependent Γ - X crossover in the barrier material a phenomenological model is followed. The main findings can be summarized as follows: 1) for symmetrical and asymmetrical dimensions of the structures, the binding energy as a function of the impurity position along the growth direction of the heterostructure has a similar behavior to that shown by the non-correlated electron wave function with maxima for the impurity in the well regions and minima for the impurity in the barrier regions, 2) for increasing radius of the system, the binding energy decreases and for R large enough reaches the limit of the binding energy in a coupled quantum well heterostructure, 3) the binding energy increases for higher Aluminum concentration in the barrier regions, 4) depending of the impurity position and of the structural dimensions of the system (well width and barrier thickness) - and because changing the height of the potential barrier makes possible to induce changes in the degree of symmetry of the carrier-wave function -, the electric field and hydrostatic pressure can cause the impurity binding energy increases or decreases, and finally 5) the line-shape of the binding energy curves are mainly given by the line-shape of the Coulomb interaction.

  10. MOS Capacitance—Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities

    NASA Astrophysics Data System (ADS)

    Binbin, Jie; Chihtang, Sah

    2012-01-01

    Metal—Oxide—Semiconductor Capacitance—Voltage (MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p-doped and compensated silicon containing the double-donor sulfur and iron, the double-acceptor zinc, and the amphoteric or one-donor and one-acceptor gold and silver impurities. These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV (50 to 200 THz and 6 to 1.5 μm), which suggest potential sub-millimeter, far-infrared and spin electronics applications.

  11. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  12. Bound States in Boson Impurity Models

    NASA Astrophysics Data System (ADS)

    Shi, Tao; Wu, Ying-Hai; González-Tudela, A.; Cirac, J. I.

    2016-04-01

    The formation of bound states involving multiple particles underlies many interesting quantum physical phenomena, such as Efimov physics or superconductivity. In this work, we show the existence of an infinite number of such states for some boson impurity models. They describe free bosons coupled to an impurity and include some of the most representative models in quantum optics. We also propose a family of wave functions to describe the bound states and verify that it accurately characterizes all parameter regimes by comparing its predictions with exact numerical calculations for a one-dimensional tight-binding Hamiltonian. For that model, we also analyze the nature of the bound states by studying the scaling relations of physical quantities, such as the ground-state energy and localization length, and find a nonanalytical behavior as a function of the coupling strength. Finally, we discuss how to test our theoretical predictions in experimental platforms, such as photonic crystal structures and cold atoms in optical lattices.

  13. Spin relaxation via exchange with donor impurity-bound electrons

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian

    In the Bir-Aronov-Pikus depolarization process affecting conduction electrons in p-type cubic semiconductors, spin relaxation is driven by exchange with short-lived valence band hole states. We have identified an analogous spin relaxation mechanism in nominally undoped silicon at low temperatures, when many electrons are bound to dilute dopant ion potentials. Inelastic scattering with externally injected conduction electrons accelerated by electric fields can excite transitions into highly spin-orbit-mixed bound excited states, driving strong spin relaxation of the conduction electrons via exchange interaction. We reveal the consequences of this spin depolarization mechanism both below and above the impact ionization threshold, where conventional charge and spin transport are restored. Based upon: Lan Qing, Jing Li, Ian Appelbaum, and Hanan Dery, Phys Rev. B 91, 241405(R) (2015). We acknowledge support from NSF, DTRA, and ONR.

  14. Computation of the Stark effect in P impurity states in silicon

    NASA Astrophysics Data System (ADS)

    Debernardi, A.; Baldereschi, A.; Fanciulli, M.

    2006-07-01

    We compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly describe low-lying impurity states. The ground-state energy slightly decreases with increasing electric field up to a critical value Ecr˜25keV/cm , at which the donor can be ionized by tunneling due to a field-induced mixing of the “ 1s -like” singlet ground state with a “ 2p0 -like” excited state in zero field. The resulting ground-state wave function at high field extends significantly outside the potential barrier surrounding the impurity. Calculations of the hyperfine splitting and of the A -shell superhyperfine coupling constants as a function of the electric field complete the work.

  15. Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field

    NASA Astrophysics Data System (ADS)

    Tiutiunnyk, Anton; Akimov, Volodymyr; Tulupenko, Viktor; Mora-Ramos, Miguel E.; Kasapoglu, Esin; Morales, Alvaro L.; Duque, Carlos Alberto

    2016-04-01

    The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their dependencies on the size of the triangle, the influence of externally applied electric field as well as the presence of an ionized donor center located at the triangle's orthocenter. The calculations are made within the effective mass and parabolic band approximations, with a diagonalization scheme being applied to obtain the eigenfunctions and eigenvalues of the x- y Hamiltonian. The incident and secondary (scattered) radiation have been considered linearly-polarized along the y-direction, coinciding with the direction of the applied electric field. For the case with an impurity center, Raman scattering with the intermediate state energy below the initial state one has been found to show maximum differential cross-section more than by an order of magnitude bigger than that resulting from the scheme with lower intermediate state energy. The Raman gain has maximum magnitude around 35 nm dot size and electric field of 40 kV/cm for the case without impurity and at maximum considered values of the input parameters for the case with impurity. Values of Raman gain of the order of up to 104cm-1 are predicted in both cases.

  16. Donor states in inverse opals

    NASA Astrophysics Data System (ADS)

    Mahan, G. D.

    2014-09-01

    We calculate the binding energy of an electron bound to a donor in a semiconductor inverse opal. Inverse opals have two kinds of cavities, which we call octahedral and tetrahedral, according to their group symmetry. We put the donor in the center of each of these two cavities and obtain the binding energy. The binding energies become very large when the inverse opal is made from templates with small spheres. For spheres less than 50 nm in diameter, the donor binding can increase to several times its unconfined value. Then electrons become tightly bound to the donor and are unlikely to be thermally activated to the semiconductor conduction band. This conclusion suggests that inverse opals will be poor conductors.

  17. Donor states in inverse opals

    SciTech Connect

    Mahan, G. D.

    2014-09-21

    We calculate the binding energy of an electron bound to a donor in a semiconductor inverse opal. Inverse opals have two kinds of cavities, which we call octahedral and tetrahedral, according to their group symmetry. We put the donor in the center of each of these two cavities and obtain the binding energy. The binding energies become very large when the inverse opal is made from templates with small spheres. For spheres less than 50 nm in diameter, the donor binding can increase to several times its unconfined value. Then electrons become tightly bound to the donor and are unlikely to be thermally activated to the semiconductor conduction band. This conclusion suggests that inverse opals will be poor conductors.

  18. Topological state engineering by potential impurities on chiral superconductors

    NASA Astrophysics Data System (ADS)

    Kaladzhyan, Vardan; Röntynen, Joel; Simon, Pascal; Ojanen, Teemu

    2016-08-01

    In this work we consider the influence of potential impurities deposited on top of two-dimensional chiral superconductors. As discovered recently, magnetic impurity lattices on an s -wave superconductor may give rise to a rich topological phase diagram. We show that a similar mechanism takes place in chiral superconductors decorated by nonmagnetic impurities, thus avoiding the delicate issue of magnetic ordering of adatoms. We illustrate the method by presenting the theory of potential impurity lattices embedded on chiral p -wave superconductors. While a prerequisite for the topological state engineering is a chiral superconductor, the proposed procedure results in vistas of nontrivial descendant phases with different Chern numbers.

  19. The effect of hydrostatic pressure on the binding energy and diamagnetic susceptibility of a laser dressed donor impurity in a GaAs/GaAlAs nanowire superlattice

    NASA Astrophysics Data System (ADS)

    Safarpour, Gh.; Jamasb, A.; Dialameh, M.; Yazdanpanahi, S.

    2014-12-01

    In this paper the effects of hydrostatic pressure and laser radiation on the binding energy and diamagnetic susceptibility of an off-center hydrogenic donor impurity in a nanowire superlattice (NWSL) are studied. The energy eigenvalues and corresponding wave functions of ground and first excited states are numerically computed using finite difference method for a NWSL with circular cross-section which involved an array of spherical quantum dots (QDs). The numerical results show that oscillatory behaviors appear in binding energies and diamagnetic susceptibilities of ground and first excited states as impurity shifts away from center of QDs. Maximum values of ground state binding energy (first excited state binding energy) occur when impurity is located at the center of QDs (at the center of barriers). Additionally, binding energies of ground and first excited states shift towards higher (lower) energies as pressure (laser radiation) increases. An opposite behavior is observed for absolute value of diamagnetic susceptibility as pressure or laser radiation increases. Also, as the QDs' volume increases the binding energies (I) decrease or (II) increase, reach maximum values and then decrease; which strongly depend on the position of impurity.

  20. Local Impurity States in Antiferromagnetic Cr-ALLOYS

    NASA Astrophysics Data System (ADS)

    Galkin, V. Yu.

    The concept of local impurity states within the energy gap of a spin-density-wave (SDW) system is introduced. It is shown that resonant scattering of conduction electrons at these states may lead to greatly enhanced low-temperature resistivity. This impurity resonance scattering (IRS) model is employed to explain the variation of residual resistivity and temperature dependence of resistivity at low temperatures of Cr-Fe and Cr-Si systems on V and Mn doping and application of high pressure.

  1. Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

    NASA Technical Reports Server (NTRS)

    Ko, K. Y.; Lagowski, J.; Gatos, H. C.

    1989-01-01

    Vanadium added to the GaAs melt getters shallow donor impurities (Si and S) and decreases their concentration in the grown crystals. This gettering is driven by chemical reactions in the melt rather than in the solid. Employing V gettering, reproducibly semi-insulating GaAs were grown by horizontal Bridgman and liquid-encapsulated Czochralski techniques, although V did not introduce any midgap energy levels. The compensation mechanism in these crystals was controlled by the balance between the native midgap donor EL2 and residual shallow acceptors. Vanadium gettering contributed to the reduction of the concentration of shallow donors below the concentration of acceptors. The present findings clarify the long-standing controversy on the role of V in achieving semi-insulating GaAs.

  2. Imaging the Impact of Impurities on Topological Surface States

    NASA Astrophysics Data System (ADS)

    Hoffman, Jennifer

    2013-03-01

    Harnessing the technological potential of the spin-polarized surface states on topological insulators requires a detailed understanding of the impact of nanoscale disorder on those surface states. We employ spectroscopic scanning tunneling microscopy (STM) in the presence of a magnetic field to visualize the impact of intrinsic impurities on topological surface states in Sb and Bi2Se3. We find a variety of impurities with different energy profiles that elastically scatter surface states through dispersive quasiparticle interference (QPI), that inelastically scatter surface states into the bulk, that locally destroy the extended surface state Landau level wavefunctions, or that form local resonant states interacting with the Dirac quasiparticles. By identifying impurities that strongly interact with and limit the mobility of the topological surface states, our impurity studies can directly advise the growth and development of future topological materials. Measurements carried out by Anjan Soumyanarayanan, Michael Yee, Yang He. Samples grown by Dillon Gardner & Young Lee; Zahir Salman & Amit Kanigel; Zhi Ren & Kouji Segawa & Yoichi Ando.

  3. Donor impurity-related linear and nonlinear intraband optical absorption coefficients in quantum ring: effects of applied electric field and hydrostatic pressure

    PubMed Central

    2012-01-01

    The linear and nonlinear intraband optical absorption coefficients in GaAs three-dimensional single quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and electric field, applied along the growth direction of the heterostructure, the energies of the ground and first excited states of a donor impurity have been found using the effective mass approximation and a variational method. The energies of these states are examined as functions of the dimensions of the structure, electric field, and hydrostatic pressure. We have also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as a function of incident photon energy for several configurations of the system. It is found that the variation of distinct sizes of the structure leads to either a redshift and/or a blueshift of the resonant peaks of the intraband optical spectrum. In addition, we have found that the application of an electric field leads to a redshift, whereas the influence of hydrostatic pressure leads to a blueshift (in the case of on-ring-center donor impurity position) of the resonant peaks of the intraband optical spectrum. PMID:23021497

  4. Donor impurity-related linear and nonlinear intraband optical absorption coefficients in quantum ring: effects of applied electric field and hydrostatic pressure.

    PubMed

    Barseghyan, Manuk G; Restrepo, Ricardo L; Mora-Ramos, Miguel E; Kirakosyan, Albert A; Duque, Carlos A

    2012-01-01

    : The linear and nonlinear intraband optical absorption coefficients in GaAs three-dimensional single quantum rings are investigated. Taking into account the combined effects of hydrostatic pressure and electric field, applied along the growth direction of the heterostructure, the energies of the ground and first excited states of a donor impurity have been found using the effective mass approximation and a variational method. The energies of these states are examined as functions of the dimensions of the structure, electric field, and hydrostatic pressure. We have also investigated the dependencies of the linear, nonlinear, and total optical absorption coefficients as a function of incident photon energy for several configurations of the system. It is found that the variation of distinct sizes of the structure leads to either a redshift and/or a blueshift of the resonant peaks of the intraband optical spectrum. In addition, we have found that the application of an electric field leads to a redshift, whereas the influence of hydrostatic pressure leads to a blueshift (in the case of on-ring-center donor impurity position) of the resonant peaks of the intraband optical spectrum. PMID:23021497

  5. Bright Solid-State Emission of Disilane-Bridged Donor-Acceptor-Donor and Acceptor-Donor-Acceptor Chromophores.

    PubMed

    Shimada, Masaki; Tsuchiya, Mizuho; Sakamoto, Ryota; Yamanoi, Yoshinori; Nishibori, Eiji; Sugimoto, Kunihisa; Nishihara, Hiroshi

    2016-02-01

    The development of disilane-bridged donor-acceptor-donor (D-Si-Si-A-Si-Si-D) and acceptor-donor-acceptor (A-Si-Si-D-Si-Si-A) compounds is described. Both types of compound showed strong emission (λem =ca. 500 and ca. 400 nm, respectively) in the solid state with high quantum yields (Φ: up to 0.85). Compound 4 exhibited aggregation-induced emission enhancement in solution. X-ray diffraction revealed that the crystal structures of 2, 4, and 12 had no intermolecular π-π interactions to suppress the nonradiative transition in the solid state. PMID:26822564

  6. Understanding Philanthropic Motivations of Northeast State Community College Donors

    ERIC Educational Resources Information Center

    Cook, Heather J.

    2012-01-01

    At Northeast State Community College (NeSCC) nearly 70% of students need some form of financial aid to attend. State support is flattening or decreasing and the gap is filled by private donors' support (Northeast State Community College, 2011). Hundreds of donors have made significant contributions to aid in the education of those in the…

  7. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  8. Direct Spectroscopic Observation of a Shallow Hydrogenlike Donor State in Insulating SrTiO3

    NASA Astrophysics Data System (ADS)

    Salman, Z.; Prokscha, T.; Amato, A.; Morenzoni, E.; Scheuermann, R.; Sedlak, K.; Suter, A.

    2014-10-01

    We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO3 which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ˜70 K. From the temperature dependence we estimate an activation energy of ˜50 meV in the bulk and ˜23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO3. The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO3-based oxide interface systems.

  9. Solid State Physics View of Liquid State Chemistry III. Electrical Conductance of Pure and Impure Water

    NASA Astrophysics Data System (ADS)

    Binbin, Jie; Chihtang, Sah

    2014-04-01

    The ‘abnormally’ high electrical conductivity of pure water was recently studied by us using our protonic bond, trap and energy band model, with five host particles: the positive and negative protons, and the amphoteric protonic trap in three charge states, positive, neutral and negative. Our second report described the electrical charge storage capacitance of pure and impure water. This third report presents the theory of particle density and electrical conductance of pure and impure water, including the impuritons, which consist of an impurity ion bonded to a proton, proton-hole or proton trap and which significantly affect impure waters' properties.

  10. Tail states in clean superconductors with magnetic impurities.

    SciTech Connect

    Vekhter, I.; Shytov, A. V.; Gruzberg, I. A.; Balatsky, A. V.

    2002-01-01

    We analyse the behavior of the density of states in a singlet s-wave superconductor with weak magnetic impurities in the clean limit. By using the method of optimal fluctuation and treating the order parameter self-consistently we show that the density of states is finite everywhere in the superconducting gap, and that it varies as in N(E) {proportional_to} -|E-{Delta}{sub 0}|{sup (7-d)/4} the mean field gap edge {Delta}{sub 0} in a d-dimensional superconductor. In contrast to most studied cases the optimal fluctuation is strongly anisotropic.

  11. Exact analytical solutions for shallow impurity states in symmetrical paraboloidal and hemiparaboloidal quantum dots

    NASA Astrophysics Data System (ADS)

    El Assaid, M.; El Aydi, M'hamed; El Feddi, M.; Dujardin, Françis

    2008-03-01

    The problem of a shallow donor impurity located at the centre of a symmetrical paraboloidal quantum dot (SPQD) is solved exactly. The Schrödinger equation is separated in the paraboloidal coordinate system. Three different cases are discussed for the radial-like equations. For a bound donor, the energy is negative and the solutions are described by Whittaker functions. For a non-bound donor, the energy is positive and the solutions become coulomb wave functions. In the last case, the energy is equal to zero and the solutions reduce to Bessel functions. Using the boundary conditions at the dot surfaces, the variations of the donor kinetic and potential energies versus the size of the dot are obtained. The problem of a shallow donor impurity in a Hemiparaboloidal Quantum dot (HPQD) is also studied. It is shown that the wave functions of a HPQD are specific linear combinations of those of a SPQD.

  12. Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Akbas, H.; Sucu, S.; Minez, S.; Dane, C.; Akankan, O.; Erdogan, I.

    2016-06-01

    We have studied and computed variationally the impurity energy, impurity energy turning points, and ground state normalized binding energy as functions of the impurity position for shallow impurity in asymmetric quantum wells under hydrostatic pressure. We found that the normalized binding energy significantly depends on the asymmetry of the well, besides depending on the impurity position and hydrostatic pressure. Also, the dependence of the positive normalized binding energy on the pressure can be used to find out the degree of the asymmetry of the well or the impurity position in the well.

  13. Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

    NASA Astrophysics Data System (ADS)

    Kalpana, P.; Reuben, A. Merwyn Jasper D.; Nithiananthi, P.; Jayakumar, K.

    2016-05-01

    The donor impurity binding energy in CdTe / Cd1-xMnxTe QWW with square well confinement along x - direction and parabolic confinement along y - direction under the influence of externally applied magnetic field has been computed using variational principle in the effective mass approximation. The spin polaronic shift has also been computed. The results are presented and discussed.

  14. Density of states in gapped superconductors with pairing-potential impurities

    NASA Astrophysics Data System (ADS)

    Bespalov, Anton; Houzet, Manuel; Meyer, Julia S.; Nazarov, Yuli V.

    2016-03-01

    We study the density of states in disordered s -wave superconductors with a small gap anisotropy. We consider disorder in the form of common nonmagnetic scatterers and pairing-potential impurities, which interact with electrons via an electric potential and a local distortion of the superconducting gap. Using quasiclassical Green functions, we determine the bound-state spectrum at a single impurity and the density of states at a finite concentration of impurities. We show that, if the gap is isotropic, an isolated impurity with suppressed pairing supports an infinite number of Andreev states. With growing impurity concentration, the energy-dependent density of states evolves from a sharp gap edge with an impurity band below it to a smeared BCS singularity in the so-called universal limit. Within one spin sector, pairing-potential impurities and weak spin-polarized magnetic impurities have essentially the same effect on the density of states. We note that, if a gap anisotropy is present, the density of states becomes sensitive to ordinary potential disorder, and the existence of Andreev states localized at pairing-potential impurities requires special conditions. An unusual feature related to the anisotropy is a nonmonotonic dependence of the gap edge smearing on impurity concentration.

  15. Nonmagnetic impurity in the spin-gap state

    SciTech Connect

    Nagaosa, N.; Ng, T.

    1995-06-01

    The effects of nonmagnetic strong scatterers (unitary limit) on magnetic and transport properties are studied for resonating-valence-bond states in both the slave-boson and slave-fermion mean-field theories with the gap for the triplet excitations. In the {ital d}-wave pairing state of the slave-boson mean-field theory in two dimensions, there is no true gap for spinons, but the Anderson localization occurs, which leads to the local moment when the repulsive interaction is taken into account. In the slave-fermion mean-field theory, local moments are found bound to nonmagnetic impurities as a result of (staggered) gauge interaction. However, in both theories, localization of spinon does not appear in the resistivity, which shows the classical value for the holon.

  16. Off-axis magneto-donor impurity in a non-uniform height quantum ribbon

    NASA Astrophysics Data System (ADS)

    Suaza, Y. A.; Fulla, M. R.; Posada-Rudas, J. G.; Marín, J. H.

    2015-11-01

    Single electron and off-axis neutral donor in non-uniform height quantum ribbon under threading external magnetic field is analyzed. The quantum ribbon height dependence with polar angle is modeled trough the two-parametric function. One of these parameters define the number of protuberances and the other one allows us to exert control on the structural deformation depth. By considering quantum ribbons with very small height-to-base aspect ratio, it was possible to obtain the energy structure through the adiabatic procedure. The corresponding angular dependent Schrödinger equation can be solved in the framework of the exact diagonalization method. The results of calculation show that the Aharanov-Bohm oscillation patterns are very sensitive against changes of the quantum ribbon structural parameters.

  17. Interpretation of scanning tunneling quasiparticle interference and impurity states

    NASA Astrophysics Data System (ADS)

    Kreisel, Andreas; Choubey, P.; Berlijn, T.; Andersen, B. M.; Hirschfeld, P. J.

    2015-03-01

    We use a simple method of calculating inhomogeneous, atomic-scale phenomena in superconductors to obtain real-space conductance maps as measured in scanning tunneling spectroscopy (STM). Our approach makes use of first principles Wannier functions in conjunction with self-consistent solutions of the Bogoliubov-de Gennes equations on a lattice to image superconducting phenomena. This method is a powerful tool since it captures correctly local symmetries on the surface that can be lower than the global lattice symmetry; it improves the spatial resolution from one pixel per lattice point to the sub-atomic scale; and simplifies the interpretation of STM data. As an example, we show how the pattern observed around a Zn impurity in BSCCO-2212, can be understood by accounting for the tails of the Cu Wannier functions, and thus compare perfectly to experimental findings. Further applications of this method include the investigation of impurity states in multiorbital systems as well as the study of quasi particle interference phenomena to enable a better understanding of novel phenomena in high temperature superconductors. P.C., A.K., and P.J.H. were supported by DOE DE-FG02-05ER46236, T.B. as a Wigner Fellow at the Oak Ridge National Laboratory, and B.M.A. and A.K. by Lundbeckfond fellowship (Grant A9318).

  18. Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Ishida, Nobuyuki; Jo, Masafumi; Mano, Takaaki; Sakuma, Yoshiki; Noda, Takeshi; Fujita, Daisuke

    2015-10-01

    The interaction between nitrogen (N) impurity states in III-V compounds plays a key role in controlling optoelectronic properties of the host materials. Here, we use scanning tunneling microscopy to characterize the spatial distribution and electronic properties of N impurity states in dilute GaNAs. We demonstrated that the N impurity states can be directly visualized by taking empty state current images using the multipass scanning method. The N impurity states broadened over several nanometers and exhibited a highly anisotropic distribution with a bowtie-like shape on the GaAs(110) surface, which can be explained by anisotropic propagation of strain along the zigzag chains of Ga and As atoms in the {110} plane. Our experimental findings provide strong insights into a possible role of N impurity states in modifying properties of the host materials.The interaction between nitrogen (N) impurity states in III-V compounds plays a key role in controlling optoelectronic properties of the host materials. Here, we use scanning tunneling microscopy to characterize the spatial distribution and electronic properties of N impurity states in dilute GaNAs. We demonstrated that the N impurity states can be directly visualized by taking empty state current images using the multipass scanning method. The N impurity states broadened over several nanometers and exhibited a highly anisotropic distribution with a bowtie-like shape on the GaAs(110) surface, which can be explained by anisotropic propagation of strain along the zigzag chains of Ga and As atoms in the {110} plane. Our experimental findings provide strong insights into a possible role of N impurity states in modifying properties of the host materials. Electronic supplementary information (ESI) available: Identification of N impurity positions in terms of depth of depressions in the filled state topographic image. Filled state topographic images of N impurity in the fourth plane. Slight modification of topographic height

  19. Localized states of a semi-infinite zigzag graphene sheet with impurity lines

    SciTech Connect

    Cunha, A. M. C.; Ahmed, Maher Z.; Cottam, M. G.; Filho, R. N. Costa

    2014-07-07

    The localized states of a semi-infinite zigzag graphene sheet are studied using a tight-binding model that allows for the inclusion of either one or two lines of impurities. These impurity lines of atoms are placed in rows labeled as n (n=1, 2, 3, …), where n=1 is the free edge. The localized defect modes associated with these impurities are studied analytically and numerically within a tridiagonal matrix formalism. For one impurity line, the modes are analyzed according to the position of that line on the sheet, whereas the modes for two impurities are studied also according to their separation and their positions relative to the edge. When an impurity line is located at the edge (n=1), it is found that the edge states are modified. When the impurities are positioned away from an edge (n>1), additional localized modes are found to occur that may be relatively flat in their dispersion.

  20. Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy

    SciTech Connect

    BEKISLI, F; Stavola, M.; FOWLER, W B; Boatner, Lynn A; Spahr, E. J.; Lüpke, G.

    2011-01-01

    Hydrogen has been found to be an important source of n-type conductivity in the transparent conducting oxide SnO2. We have studied the properties of H in SnO2 single crystals with infrared spectroscopy. When H or D is introduced into SnO2 by annealing in an H2 or D2 ambient at elevated temperature, several O-H and O-D vibrational lines are produced along with the low-frequency absorption that is characteristic of free carriers. To probe the relationship between H and the free carriers it introduces, the thermal stability of the free carrier absorption, and its relationship to the thermal stabilities of the O-H lines have been examined. Two H-related donors are found, one that is stable at room temperature on a time scale of weeks and a second that is stable up to 600 C. These electrically active defects are found to interact with other O-H centers and can be converted from one to another by thermal treatments. The vibrational modes have been found to have distinctive polarization properties that provide an important test of microscopic defect models for the several O-H and (O-H)2 centers that we have observed.

  1. Efficient Donor Impurities in ZnO Nanorods by Polyethylene Glycol for Enhanced Optical and Glutamate Sensing Properties.

    PubMed

    Elhag, Sami; Khun, Kimleang; Khranovskyy, Volodymyr; Liu, Xianjie; Willander, Magnus; Nur, Omer

    2016-01-01

    In this paper, we show that the possibility of using polyethylene glycol (EG) as a hydrogen source and it is used to assist the hydrothermal synthesis of ZnO nanorods (ZNRs). EG doping in ZNRs has been found to significantly improve their optical and chemical sensing characteristics toward glutamate. The EG was found to have no role on the structural properties of the ZNRs. However, the x-ray photoelectron spectroscopy (XPS) suggests that the EG could induce donor impurities effect in ZnO. Photoluminescence (PL) and UV-Vis. spectra demonstrated this doping effect. Mott-Schottky analysis at the ZNRs/electrolyte interface was used to investigate the charge density for the doped ZNRs and showed comparable dependence on the used amount of EG. Moreover, the doped ZNRs were used in potentiometric measurements for glutamate for a range from 10(-6) M to 10(-3) M and the potential response of the sensor electrode was linear with a slope of 91.15 mV/decade. The wide range and high sensitivity of the modified ZNRs based glutamate biosensor is attributed to the doping effect on the ZNRs that is dictated by the EG along with the high surface area-to-volume ratio. The findings in the present study suggest new avenues to control the growth of n-ZnO nanostructures and enhance the performance of their sensing devices. PMID:26861342

  2. Efficient Donor Impurities in ZnO Nanorods by Polyethylene Glycol for Enhanced Optical and Glutamate Sensing Properties

    PubMed Central

    Elhag, Sami; Khun, Kimleang; Khranovskyy, Volodymyr; Liu, Xianjie; Willander, Magnus; Nur, Omer

    2016-01-01

    In this paper, we show that the possibility of using polyethylene glycol (EG) as a hydrogen source and it is used to assist the hydrothermal synthesis of ZnO nanorods (ZNRs). EG doping in ZNRs has been found to significantly improve their optical and chemical sensing characteristics toward glutamate. The EG was found to have no role on the structural properties of the ZNRs. However, the x-ray photoelectron spectroscopy (XPS) suggests that the EG could induce donor impurities effect in ZnO. Photoluminescence (PL) and UV-Vis. spectra demonstrated this doping effect. Mott-Schottky analysis at the ZNRs/electrolyte interface was used to investigate the charge density for the doped ZNRs and showed comparable dependence on the used amount of EG. Moreover, the doped ZNRs were used in potentiometric measurements for glutamate for a range from 10−6 M to 10−3 M and the potential response of the sensor electrode was linear with a slope of 91.15 mV/decade. The wide range and high sensitivity of the modified ZNRs based glutamate biosensor is attributed to the doping effect on the ZNRs that is dictated by the EG along with the high surface area-to-volume ratio. The findings in the present study suggest new avenues to control the growth of n-ZnO nanostructures and enhance the performance of their sensing devices. PMID:26861342

  3. Binding Energies and Linear and Nonlinear Optical Properties of a Donor Impurity in a Three-Dimensional Quantum Pseudodot

    NASA Astrophysics Data System (ADS)

    Kirak, Muharrem; Yilmaz, Sait

    2013-12-01

    A theoretical study of the electronic properties of the ground state and excited states and the linear and the third-order nonlinear optical properties (i. e., absorption coefficients and refractive indices) in a spherical GaAs pseudodot system is reported. The variational procedure has been employed in determining sublevel energy eigenvalues and their wave functions within the effective mass approximation. Our results indicate that the chemical potential of the electron gas and the minimum value of the pseudoharmonic potential have a great influence on the electrical and optical properties of hydrogenic impurity states. Also, we have found that the magnitudes of the absorption coefficient and the refractive index change of the spherical quantum dot increase for transitions between higher levels.

  4. On the entanglement of electronic states of impurity atoms in nanoparticles

    SciTech Connect

    Basharov, Askhat M; Znamenskiy, Nikolay V; Gorbachev, Valery N

    2006-08-31

    By using the derived master equations, it is shown that the decay of electronic impurities in a nanocrystal can be described as a collective relaxation of particles. A set of entangled states of impurity atoms is found, which have immunity to this relaxation. These states can be used for decoherence-free quantum processing. (quantum optics and information)

  5. Long-range ferromagnetic order induced by a donor impurity band exchange in SnO{sub 2}:Er{sup 3+} nanoparticles

    SciTech Connect

    Aragón, F. H.; Coaquira, J. A. H.; Chitta, V. A.; Hidalgo, P.; Brito, H. F.

    2013-11-28

    In this work, the structural and magnetic properties of Er-doped SnO{sub 2} (SnO{sub 2}:Er) nanoparticles are reported. The SnO{sub 2}:Er nanoparticles have been synthesized by a polymer precursor method with Er content from 1.0% to 10.0%. X-ray diffraction results indicate the formation of only the rutile-type structure in all samples. The estimated mean crystallite size shows a decrease from ∼10 to ∼4 nm when the Er content is increased from 1.0% to 10.0%. The particle size values have been corroborated by transmission electron microscopy technique. The thermal dependence of the magnetization is consistent with the 3+ oxidation state of erbium ions for all samples. A strong paramagnetic-like behavior coexisting with a ferromagnetic phase has been determined for samples with Er content below 5.0%. Above this concentration, only a paramagnetic behavior has been determined. Isothermal magnetization curves are consistent with the occurrence of long-range ferromagnetic order mediated by donor electrons forming bound magnetic polarons which overlap to produce a spin-split impurity band.

  6. Partial phenotyping in voluntary blood donors of Gujarat State

    PubMed Central

    Gajjar, Maitrey; Patel, Tarak; Bhatnagar, Nidhi; Patel, Kruti; Shah, Mamta; Prajapati, Amit

    2016-01-01

    Introduction: Partial phenotyping of voluntary blood donors has vital role in transfusion practice, population genetic study and in resolving legal issues. The Rh blood group is one of the most complex and highly immunogenic blood group known in humans. The Kell system, discovered in 1946, is the third most potent system at triggering hemolytic transfusion reactions and consists of 25 highly immunogenic antigens. Knowledge of Rh & Kell phenotypes in given population is relevant for better planning and management of blood bank; the main goal is to find compatible blood for patients needing multiple blood transfusions. The aim of this study was to evaluate the frequency of Rh & Kell phenotype of voluntary donors in Gujarat state. Materials and Methods: The present study was conducted by taking 5670 samples from random voluntary blood donors coming in blood donation camp. Written consent was taken for donor phenotyping. The antigen typing of donors was performed by Qwalys-3(manufacturer: Diagast) by using electromagnetic technology on Duolys plates. Results: Out of 5670 donors, the most common Rh antigen observed in the study population was e (99.07%) followed by D (95.40%), C (88.77%), c (55.89%) and E (17.88%). The frequency of the Kell antigen (K) was 1.78 %. Discussion: The antigen frequencies among blood donors from Gujarat were compared with those published for other Indian populations. The frequency of D antigen in our study (95.4%) and north Indian donors (93.6) was significantly higher than in the Caucasians (85%) and lower than in the Chinese (99%). The frequencies of C, c and E antigens were dissimilar to other ethnic groups while the ‘e’ antigen was present in high frequency in our study as also in the other ethnic groups. Kell antigen (K) was found in only 101 (1.78 %) donors out of 5670. Frequency of Kell antigen in Caucasian and Black populations is 9% & 2% respectively. The most common Kell phenotype was K-k+, not just in Indians (96.5%) but also

  7. Direct spectroscopic observation of a shallow hydrogenlike donor state in insulating SrTiO3.

    PubMed

    Salman, Z; Prokscha, T; Amato, A; Morenzoni, E; Scheuermann, R; Sedlak, K; Suter, A

    2014-10-10

    We present a direct spectroscopic observation of a shallow hydrogenlike muonium state in SrTiO(3) which confirms the theoretical prediction that interstitial hydrogen may act as a shallow donor in this material. The formation of this muonium state is temperature dependent and appears below ∼ 70K. From the temperature dependence we estimate an activation energy of ∼ 50 meV in the bulk and ∼ 23 meV near the free surface. The field and directional dependence of the muonium precession frequencies further supports the shallow impurity state with a rare example of a fully anisotropic hyperfine tensor. From these measurements we determine the strength of the hyperfine interaction and propose that the muon occupies an interstitial site near the face of the oxygen octahedron in SrTiO(3). The observed shallow donor state provides new insight for tailoring the electronic and optical properties of SrTiO(3)-based oxide interface systems. PMID:25375730

  8. Quasiparticle states and quantum interference induced by magnetic impurities on a two-dimensional topological superconductor

    NASA Astrophysics Data System (ADS)

    Fu, Zhen-Guo; Zhang, Ping; Wang, Zhigang; Li, Shu-Shen

    2012-04-01

    We theoretically study the effect of localized magnetic impurities on two-dimensional topological superconductor (TSC). We show that the local density of states (LDOS) can be tuned by the effective exchange field m, the chemical potential μ of TSC, and the distance Δr as well as the relative spin angle α between two impurities. The changes in Δr between two impurities alter the interference and result in significant modifications to the bonding and antibonding states. Furthermore, the bound-state spin LDOS induced by single and double magnetic impurity scattering, the quantum corrals and the quantum mirages are also discussed. Finally, we briefly compare the impurities in TSC with those in topological insulators.

  9. Temperature anomaly of the coefficient of ultrasonic absorption by electrons of hybridized states of cobalt impurities in mercury selenide

    NASA Astrophysics Data System (ADS)

    Zhevstovskikh, I. V.; Okulov, V. I.; Gudkov, V. V.; Mayakin, V. Yu.; Sarychev, M. N.; Andriichuk, M. D.; Paranchich, L. D.

    2015-05-01

    The effects of the interaction of ultrasound with donor d electrons of cobalt impurity atoms at low concentrations in mercury selenide crystals have been investigated. The temperature dependences of the electronic contribution to the absorption coefficient at a frequency of 53 MHz in crystals with cobalt concentrations from 1018 to 1020 cm-3 and in the undoped crystal have been observed experimentally. It has been found that crystals with impurities are characterized by an anomalous nonmonotonic temperature dependence of the absorption coefficient of the slow transverse wave in a narrow temperature range near 10 K. A smooth monotonic temperature dependence has been observed for longitudinal and fast transverse waves. Based on the developed theoretical interpretation, it has been established that the anomaly in the temperature dependence of the absorption coefficient of a slow transverse wave is associated with the hybridization of impurity d states in the conduction band of the crystal. A comparison of the theoretical and experimental dependences has made it possible to determine the parameters characterizing the hybridized electronic states.

  10. Cr impurity-induced electronic states in ZnTe(110) surface

    NASA Astrophysics Data System (ADS)

    Kanazawa, Ken; Nishimura, Taku; Yoshida, Shoji; Shigekawa, Hidemi; Kuroda, Shinji

    2015-08-01

    The impurity states of Cr atoms, which substituted Zn sites in the topmost layer of a p-type ZnTe(110) surface, were investigated by scanning tunneling microscopy/spectroscopy (STM/STS) and we firstly observed Cr-induced impurity states in the energy gap region of the host ZnTe including the unoccupied states by STS. Furthermore, we compared the observed energy levels and spatial distributions of the local density of states with those in the previous theoretical study [Katayama-Yoshida et al., Phys. Status Solidi A 204, 15 (2007)] and successfully identified the impurity states as the respective spin-polarized impurity states predicted by the theoretical study.

  11. Electronic Structure, Donor and Acceptor Transitions, and Magnetism of 3d Impurities in In2O3 and ZnO

    SciTech Connect

    Raebiger, H.; Lany, S,; Zunger, A.

    2009-01-01

    3d transition impurities in wide-gap oxides may function as donor/acceptor defects to modify carrier concentrations, and as magnetic elements to induce collective magnetism. Previous first-principles calculations have been crippled by the LDA error, where the occupation of the 3d-induced levels is incorrect due to spurious charge spilling into the misrepresented host conduction band, and have only considered magnetism and carrier doping separately. We employ a band-structure-corrected theory, and present simultaneously the chemical trends for electronic properties, carrier doping, and magnetism along the series of 3d{sup 1}-3d{sup 8} transition-metal impurities in the representative wide-gap oxide hosts In{sub 2}O{sub 3} and ZnO. We find that most 3d impurities in In{sub 2}O{sub 3} are amphoteric, whereas in ZnO, the early 3d's (Sc, Ti, and V) are shallow donors, and only the late 3d's (Co and Ni) have acceptor transitions. Long-range ferromagnetic interactions emerge due to partial filling of 3d resonances inside the conduction band and, in general, require electron doping from additional sources.

  12. Impurity effect on surface states of Bi (111) ultrathin films

    NASA Astrophysics Data System (ADS)

    Zhu, Kai; Tian, Dai; Wu, Lin; Xu, Jianli; Jin, Xiaofeng

    2016-08-01

    The surface impurity effect on the surface-state conductivity and weak antilocalization (WAL) effect has been investigated in epitaxial Bi (111) films by magnetotransport measurements at low temperatures. The surface-state conductivity is significantly reduced by the surface impurities of Cu, Fe, and Co. The magnetotransport data demonstrate that the observed WAL is robust against deposition of nonmagnetic impurities, but it is quenched by the deposition of magnetic impurities which break the time reversal symmetry. Our results help to shed light on the effect of surface impurities on the electron and spin transport properties of a 2D surface electron systems. Project supported by the National Basic Research Program of China (Grants Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grants Nos. 11374057, 11434003, and 11421404).

  13. Ground state and excitations of quantum dots with magnetic impurities

    NASA Astrophysics Data System (ADS)

    Kaul, Ribhu K.; Ullmo, Denis; Zaránd, Gergely; Chandrasekharan, Shailesh; Baranger, Harold U.

    2009-07-01

    We consider an “impurity” with a spin degree of freedom coupled to a finite reservoir of noninteracting electrons, a system which may be realized by either a true impurity in a metallic nanoparticle or a small quantum dot coupled to a large one. We show how the physics of such a spin impurity is revealed in the many-body spectrum of the entire finite-size system; in particular, the evolution of the spectrum with the strength of the impurity-reservoir coupling reflects the fundamental many-body correlations present. Explicit calculation in the strong- and the weak-coupling limits shows that the spectrum and its evolution are sensitive to the nature of the impurity and the parity of electrons in the reservoir. The effect of the finite-size spectrum on two experimental observables is considered. First, we propose an experimental setup in which the spectrum may be conveniently measured using tunneling spectroscopy. A rate equation calculation of the differential conductance suggests how the many-body spectral features may be observed. Second, the finite-temperature magnetic susceptibility is presented, both the impurity and the local susceptibilities. Extensive quantum Monte Carlo calculations show that the local susceptibility deviates from its bulk scaling form. Nevertheless, for special assumptions about the reservoir—the “clean Kondo box” model—we demonstrate that finite-size scaling is recovered. Explicit numerical evaluations of these scaling functions are given, both for even and odd parities and for the canonical and the grand-canonical ensembles.

  14. Effects of impurity states on exchange coupling in Fe/Fe3O4 junctions

    NASA Astrophysics Data System (ADS)

    Inoue, J.; Honda, S.; Itoh, H.; Mibu, K.; Yanagihara, H.; Kita, E.

    2012-05-01

    Exchange coupling (EC) in Fe/Fe3O4 junctions containing magnetic impurities and in-gap states at the interface is calculated using a formula obtained by a cleaved layer method. The model for EC is constructed by performing first-principles calculations of the electronic and magnetic states of Co, Mn, and Cr impurities on the Fe surface and those of in-gap states in a bulk γ-Fe2O3, which has the same lattice structure as Fe3O4 but contains Fe defects. We show that the effect of Co impurities on EC is opposite to that of Cr and Mn impurities and that in-gap states tend to cause parallel magnetization alignment of two ferromagnets. These results are attributed to the change in electronic states caused by the presence of impurities. Further, we compare calculated results with experimental ones obtained in Fe/Fe3O4 junctions and suggest that doping magnetic impurities at the interface could be a useful way to control the magnitude and sign of the EC.

  15. The beauty of impurities: Two revivals of Friedel's virtual bound-state concept

    NASA Astrophysics Data System (ADS)

    Georges, Antoine

    2016-03-01

    Jacques Friedel pioneered the theoretical study of impurities and magnetic impurities in metals. He discovered Friedel oscillations, introduced the concept of virtual bound-state, and demonstrated that the charge on the impurity is related to the scattering phase-shift at the Fermi level (Friedel sum-rule). After a brief review of some of these concepts, I describe how they proved useful in two new contexts. The first one concerns the Coulomb blockade in quantum dots, and its suppression by the Kondo effect. The second one is the dynamical mean-field theory of strong electronic correlations. xml:lang="fr"

  16. State regulation of donor insemination: an Israeli case study.

    PubMed

    Carmeli, Y S; Birenbaum-Carmeli, D

    2000-01-01

    Donor insemination (DI) in Israel is state regulated. The Ministry of Health dictates a policy of total medicalization and secrecy. In this paper we analyze the state regulations in reference to their historical and cultural contexts. Our main argument is that in Israel, having children and establishing a family are of supreme importance, owing to Biblical myths as well as the Zionist ethos. The state, as the provider of health care services, encourages fertility treatments in general. However, DI, while assisting conception, results in a somewhat non-traditional family. In contradiction to trends towards openness observed in Western countries, Israel's state policy is one of hiding and camouflaging. We attribute this policy to the strict support of the 'natural family' paradigm, which equally gives DI-assisted families a problem no less than a solution. PMID:11289651

  17. Observation of dopant-induced impurity states in bottom-up graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Pedramrazi, Zahra; Chen, Chen; Marangoni, Tomas; Cloke, Ryan; Cao, Ting; Louie, Steven; Fischer, Felix; Crommie, Michael

    Graphene nanoribbons (GNRs) provide a means for inducing energy gaps in graphene and are a promising candidate for many nanotechnological applications. New bottom-up fabrication techniques allow the structure of GNRs to be tuned with atomic precision, thus providing new opportunities for modifying their electronic structure. Here we report the synthesis of bottom-up armchair GNRs (AGNRs) with isolated substitutional boron-dopant centers; thus creating localized impurity states in the GNR. These impurities are realized via dilute doping of pristine n =7 AGNRs with sparse boron-containing monomer units, resulting in uniform-width n =7 AGNR segments where only two carbon atoms have been substitutionally replaced by boron atoms. Scanning tunneling microscopy (STM) and spectroscopy (STS) were performed to study the electronic structure of these AGNR impurity systems, enabling us to observe localized mid-gap impurity states.

  18. Scattering theory and ground-state energy of Dirac fermions in graphene with two Coulomb impurities

    NASA Astrophysics Data System (ADS)

    Klöpfer, Denis; De Martino, Alessandro; Matrasulov, Davron U.; Egger, Reinhold

    2014-08-01

    We study the physics of Dirac fermions in a gapped graphene monolayer containing two Coulomb impurities. For the case of equal impurity charges, we discuss the ground-state energy using the linear combination of atomic orbitals (LCAO) approach. For opposite charges of the Coulomb centers, an electric dipole potential results at large distances. We provide a nonperturbative analysis of the corresponding low-energy scattering problem.

  19. Theory of the electronic states and absorption spectrum of the LiCl:Ag+ impurity system

    NASA Astrophysics Data System (ADS)

    Jackson, Koblar A.; Lin, Chun C.

    1990-01-01

    The impurity absorption spectra of Ag+ and Cu+ impurities in alkali halide hosts show characteristically different features, despite the similar nature of the corresponding free ions. We use the self-interaction-corrected local-spin-density (SIC-LSD) theory to calculate the electronic structure of the ground state (4d) and the 5s and 5p excited states of the LiCl:Ag+ impurity ion. The method of linear combinations of atomic orbitals is used to determine the wave functions and energy levels. By comparing with previous calculations for LiCl:Cu+, we are able to attribute the differences in the d-->s and d-->p transitions in the ultraviolet spectra of these systems to the increased bonding between host crystal and impurity orbitals in LiCl:Ag+, due to the more extensive nature of the Ag+ 4d orbitals. A modification of the earlier SIC-LSD impurity-crystal procedure is introduced to treat the strongly mixed impurity states.

  20. Impurity trapped exciton states related to rare earth ions in crystals under high hydrostatic pressure

    SciTech Connect

    Grinberg, M. Mahlik, S.

    2013-01-15

    Emission related to rare earth ions in solids takes place usually due to 4f{sup n} {yields} 4f{sup n} and 4f{sup n-1}5d{sup 1} {yields} 4f{sup n} internal transitions. In the case of band to band excitation the effective energy transfer from the host to optically active impurity is required. Among other processes one of the possibilities is capturing of the electron at excited state and hole at the ground state of impurity. Localization of electron or hole at the dopand site creates a long range Coulomb potential that attracts the second carrier which then occupies the localized Rydberg-like states. Such a system can be considered as impurity trapped exciton. Usually impurity trapped exciton is a short living phenomenon which decays non-radiatively leaving the impurity ion in the excited state. However, in several compounds doped with Eu{sup 2+} the impurity trapped exciton states become stable and contribute to the radiative processes though anomalous luminescence that appears apart of the 4f{sup 7} {yields} 4f{sup 7} and 4f{sup 7}5d{sup 1} {yields} 5f{sup 7} emission. In this contribution pressure effect on energies of the 4f{sup n-1}5d{sup 1}{yields}5f{sup n} transitions in Ln doped oxides and fluorides as well as influence of pressure on the energy of impurity trapped exciton states is discussed. The latest results on high pressure investigations of luminescence related to Pr{sup 3+}, and Eu{sup 2+} in different lattices are reviewed.

  1. Iron impurities on Sb (111) surface and their effects on topological surface state

    NASA Astrophysics Data System (ADS)

    Han, Jinhee; Lee, Hyungjun; Choi, Hyoung Joon

    2012-02-01

    We study iron impurities on Sb (111) surface and their effects on topological surface state by using an ab-initio pseudopotential density-functional method. We implemented the spin-orbit interaction into the SIESTA in a form of additional fully non-local projectors. To calculate electronic structure of topological surface states, we consider a slab of Sb using a supercell containing 20 atomic layers with experimental bulk Sb lattice parameters. We determine atomic positions of Fe impurities on Sb (111) surface by minimizing the total energy, and calculate surface band structures near the Fermi level. To find effects of the impurity on the surface states of Sb (111) surface, we simulate ARPES spectra as a function of impurity density on the surface. From the results, we find that Fe impurity states are present near Fermi level and they strongly interact with the surface states. This work was supported by the NRF of Korea (Grant Nos. 2009-0081204 and 2011-0018306) and KISTI Supercomputing Center (Project No. KSC-2011-C2-04).

  2. An extended Foerster-Dexter model for correlated donor-acceptor placement in solid state materials

    NASA Astrophysics Data System (ADS)

    Rotman, S. R.; Hartmann, F. X.

    1987-09-01

    The current theory of donor-acceptor interactions in solid-state materials is based on a random distribution of donors and acceptors through the crystal. In this paper, we present a model to calculate the observable transfer rates for the correlated positioning of donors and acceptors in laser materials. Chemical effects leading to such correlations are discussed.

  3. Excited states and valley effects in a negatively charged impurity in a silicon FinFET.

    SciTech Connect

    Hollenberg, Lloyd; Klimeck, Gerhard; Carroll, Malcolm S.; Rahman, Rajib; Muller, Richard Partain; Rogge, Sven; Verduijn, Arjan; Lansbergen, Gabriel

    2010-07-01

    The observation and characterization of a single atom system in silicon is a significant landmark in half a century of device miniaturization, and presents an important new laboratory for fundamental quantum and atomic physics. We compare with multi-million atom tight binding (TB) calculations the measurements of the spectrum of a single two-electron (2e) atom system in silicon - a negatively charged (D-) gated Arsenic donor in a FinFET. The TB method captures accurate single electron eigenstates of the device taking into account device geometry, donor potentials, applied fields, interfaces, and the full host bandstructure. In a previous work, the depths and fields of As donors in six device samples were established through excited state spectroscopy of the D0 electron and comparison with TB calculations. Using self-consistent field (SCF) TB, we computed the charging energies of the D- electron for the same six device samples, and found good agreement with the measurements. Although a bulk donor has only a bound singlet ground state and a charging energy of about 40 meV, calculations show that a gated donor near an interface can have a reduced charging energy and bound excited states in the D- spectrum. Measurements indeed reveal reduced charging energies and bound 2e excited states, at least one of which is a triplet. The calculations also show the influence of the host valley physics in the two-electron spectrum of the donor.

  4. Using bound exciton transitions to optically resolve neutral donor hyperfine states of various donor species in Silicon-28

    NASA Astrophysics Data System (ADS)

    Salvail, Jeff; Dluhy, Phillip; Saeedi, Kamyar; Szech, Michael; Riemann, Helge; Abromisov, Nikolai; Becker, Peter; Pohl, Hans-Joachim; Thewalt, Michael

    2014-03-01

    Phosphorus in silicon is established as a promising resource for use in quantum information processing tasks. The neutral donor hyperfine states have been shown to have record long coherence times, high fidelity gates via RF pulses, and projective readout via optical bound exciton transitions. As Shannon's theory of information tells us, we can process more information in an alphabet of more symbols, so there is motivation to look at donors with higher nuclear spin than the I = 1 / 2 of 31P, which provide access to Hilbert spaces of dimension greater than two. In this talk I will describe optical studies of the donors 75As (I = 3 / 2), 121Sb (I = 5 / 2), and 209Bi (I = 9 / 2) in 28Si.

  5. Edge states and local electronic structure around an adsorbed impurity in a topological superconductor

    NASA Astrophysics Data System (ADS)

    Tai, Yuan-Yen; Choi, Hongchul; Ahmed, Towfiq; Ting, C. S.; Zhu, Jian-Xin

    2015-11-01

    Recently, topological superconducting states have attracted much interest. In this paper, we consider a topological superconductor with Z2 topological mirror order [Y.-Y. Tai et al., Phys. Rev. B 91, 041111(R) (2015), 10.1103/PhysRevB.91.041111] and s±-wave superconducting pairing symmetry, within a two-orbital model originally designed for iron-based superconductivity [Y.-Y. Tai et al., Europhys. Lett. 103, 67001 (2013), 10.1209/0295-5075/103/67001]. We predict the existence of gapless edge states. We also study the local electronic structure around an adsorbed interstitial magnetic impurity in the system, and find the existence of low-energy in-gap bound states even with a weak spin polarization on the impurity. We also discuss the relevance of our results to a recent scanning tunneling microscopy experiment on a Fe(Te,Se) compound with an adsorbed Fe impurity [J.-X. Yin et al., Nat. Phys. 11, 543 (2015), 10.1038/nphys3371], for which our density functional calculations show the Fe impurity is spin polarized.

  6. Role of impurities on diffusion-induced defective states

    NASA Astrophysics Data System (ADS)

    Castaldini, A.; Cavallini, A.; Fraboni, B.; Giannotte, E.

    1992-12-01

    The defective states induced in floating zone Si by the heavy diffusion of dopants have been investigated by means of the electron beam-induced current method. By measuring the minority carrier diffusion length with the first order moment method, and by directly imaging the defects, their electrical activity has been analyzed. The diffused samples have subsequently been dry oxidized, so that the evolution of the electrical and morphological properties of the induced defects could be followed. Two sets of samples, one diffused with B and the other with B and Al, have been investigated in order to study the effects of the presence of Al. Significant improvements in the diffusion length have been observed in samples where Al had been codiffused, thus providing indication for the role played by Al on the electrical activity of bulk defective states.

  7. Unsteady-state transfer of impurities during crystal growth of sucrose in sugarcane solutions

    NASA Astrophysics Data System (ADS)

    Martins, P. M.; Ferreira, A.; Polanco, S.; Rocha, F.; Damas, A. M.; Rein, P.

    2009-07-01

    In this work, we present growth rate data of sucrose crystals in the presence of impurities that can be used by both sugar technologists and crystal growth scientists. Growth rate curves measured in a pilot-scale evaporative crystallizer suggest a period of slow growth that follows the seeding of crystals into supersaturated technical solutions. The observed trend was enhanced by adding typical sugarcane impurities such as starch, fructose or dextran to the industrial syrups. Maximum growth rates of sucrose resulted at intermediate rather than high supersaturation levels in the presence of the additives. The effects of the additives on the sucrose solubility and sucrose mass transfer in solution were taken into account to explain the observed crystal growth kinetics. A novel mechanism was identified of unsteady-state adsorption of impurities at the crystal surface and their gradual replacement by the crystallizing solute towards the equilibrium occupation of the active sites for growth. Specifically designed crystallization experiments at controlled supersaturation confirmed this mechanism by showing increasing crystal growth rates with time until reaching a steady-state value for a given supersaturation level and impurity content.

  8. Probe of local impurity states by bend resistance measurements in graphene cross junctions

    NASA Astrophysics Data System (ADS)

    Du, J.; Li, J. Y.; Kang, N.; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H. Q.

    2016-06-01

    We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate that a graphene cross junction may serve as a sensitive probe of local impurity states in graphene at the nanoscale.

  9. Probe of local impurity states by bend resistance measurements in graphene cross junctions.

    PubMed

    Du, J; Li, J Y; Kang, N; Lin, Li; Peng, Hailin; Liu, Zhongfan; Xu, H Q

    2016-06-17

    We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate that a graphene cross junction may serve as a sensitive probe of local impurity states in graphene at the nanoscale. PMID:27159926

  10. An impurity-induced gap system as a quantum data bus for quantum state transfer

    SciTech Connect

    Chen, Bing; Li, Yong; Song, Z.; Sun, C.-P.

    2014-09-15

    We introduce a tight-binding chain with a single impurity to act as a quantum data bus for perfect quantum state transfer. Our proposal is based on the weak coupling limit of the two outermost quantum dots to the data bus, which is a gapped system induced by the impurity. By connecting two quantum dots to two sites of the data bus, the system can accomplish a high-fidelity and long-distance quantum state transfer. Numerical simulations for finite system show that the numerical and analytical results of the effective coupling strength agree well with each other. Moreover, we study the robustness of this quantum communication protocol in the presence of disorder in the couplings between the nearest-neighbor quantum dots. We find that the gap of the system plays an important role in robust quantum state transfer.

  11. Impurity effects in crystal growth from solutions: Steady states, transients and step bunch motion

    NASA Astrophysics Data System (ADS)

    Ranganathan, Madhav; Weeks, John D.

    2014-05-01

    We analyze a recently formulated model in which adsorbed impurities impede the motion of steps in crystals grown from solutions, while moving steps can remove or deactivate adjacent impurities. In this model, the chemical potential change of an atom on incorporation/desorption to/from a step is calculated for different step configurations and used in the dynamical simulation of step motion. The crucial difference between solution growth and vapor growth is related to the dependence of the driving force for growth of the main component on the size of the terrace in front of the step. This model has features resembling experiments in solution growth, which yields a dead zone with essentially no growth at low supersaturation and the motion of large coherent step bunches at larger supersaturation. The transient behavior shows a regime wherein steps bunch together and move coherently as the bunch size increases. The behavior at large line tension is reminiscent of the kink-poisoning mechanism of impurities observed in calcite growth. Our model unifies different impurity models and gives a picture of nonequilibrium dynamics that includes both steady states and time dependent behavior and shows similarities with models of disordered systems and the pinning/depinning transition.

  12. The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well

    PubMed Central

    2012-01-01

    Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations. PMID:23095253

  13. Steady-state tokamak reactor with non-divertor impurity control: STARFIRE

    SciTech Connect

    Baker, C.C.

    1980-01-01

    STARFIRE is a conceptual design study of a commercial tokamak fusion electric power plant. Particular emphasis has been placed on simplifying the reactor concept by developing design concepts to produce a steady-state tokamak with non-divertor impurity control and helium ash removal. The concepts of plasma current drive using lower hybrid rf waves and a limiter/vacuum system for reactor applications are described.

  14. Resonant impurity states in chemically disordered half-Heusler Dirac semimetals

    NASA Astrophysics Data System (ADS)

    Chadova, K.; Ködderitzsch, D.; Minár, J.; Ebert, H.; Kiss, J.; D'Souza, S. W.; Wollmann, L.; Felser, C.; Chadov, S.

    2016-05-01

    We address the electron transport characteristics in bulk half-Heusler alloys with their compositions tuned to the borderline between topologically nontrivial semimetallic and trivial semiconducting phases. Accurate first-principles calculations based on the coherent potential approximation (CPA) reveal that all the studied systems exhibit sets of dispersionless impurity-like resonant levels, with one of them being located at the Dirac point. By means of the Kubo-Bastin formalism we reveal that the residual conductivity of these alloys is strongly suppressed by impurity scattering, whereas the spin Hall conductivity exhibits a rather complex behavior induced by the resonant states. In particular for LaPt0.5Pd0.5Bi we find that the total spin Hall conductivity is strongly suppressed by two large and opposite contributions: the negative Fermi-surface contribution produced by the resonant impurity and the positive Fermi-sea term stemming from the occupied states. At the same time, we identify no conductivity contributions from the conical states.

  15. Living donor liver transplantation for inborn errors of metabolism - An underutilized resource in the United States.

    PubMed

    Pham, Thomas A; Enns, Gregory M; Esquivel, Carlos O

    2016-09-01

    Inborn metabolic diseases of the liver can be life-threatening disorders that cause debilitating and permanent neurological damage. Symptoms may manifest as early as the neonatal period. Liver transplant replaces the enzymatically deficient liver, allowing for metabolism of toxic metabolites. LDLT for metabolic disorders is rarely performed in the United States as compared to countries such as Japan, where they report >2000 cases performed within the past two decades. Patient and graft survival is comparable to that of the United States, where most of the studies are based on deceased donors. No living donor complications were observed, suggesting that LDLT is as safe and effective as deceased donor transplants performed in the USA. Increased utilization of living donors in the USA will allow for early transplantation to prevent permanent neurological damage in those with severe disease. Pediatric transplant centers should consider utilizing living donors when feasible for children with metabolic disorders of the liver. PMID:27392539

  16. Efficient DMFT impurity solver using real-time dynamics with matrix product states

    NASA Astrophysics Data System (ADS)

    Ganahl, Martin; Aichhorn, Markus; Evertz, Hans Gerd; Thunström, Patrik; Held, Karsten; Verstraete, Frank

    2015-10-01

    We propose to calculate spectral functions of quantum impurity models using the time evolving block decimation (TEBD) for matrix product states. The resolution of the spectral function is improved by a so-called linear prediction approach. We apply the method as an impurity solver within the dynamical mean-field theory (DMFT) for the single- and two-band Hubbard model on the Bethe lattice. For the single-band model, we observe sharp features at the inner edges of the Hubbard bands. A finite-size scaling shows that they remain present in the thermodynamic limit. We analyze the real time-dependence of the double occupation after adding a single electron and observe oscillations at the same energy as the sharp feature in the Hubbard band, indicating a long-lived coherent superposition of states that correspond to the Kondo peak and the side peaks. For a two-band Hubbard model, we observe an even richer structure in the Hubbard bands, which cannot be related to a multiplet structure of the impurity, in addition to sharp excitations at the band edges of a type similar to the single-band case.

  17. Living donor liver transplantation in Brazil—current state

    PubMed Central

    Andraus, Wellington; D’Alburquerque, Luiz A. C.

    2016-01-01

    Currently in Brazil, living donor liver transplantation (LDLT) represents 8.5% of liver transplantation (LT), being the majority pediatric one. Up to now, according to Brazilian Organ Transplantation Association (ABTO) annual report, 2,086 procedures have been done nationwide, most of them in southeast and south regions. Based on national centers reports, biliary complication is the most common recipient postoperative complication (14.5–20.6%), followed by hepatic artery thrombosis (3.1–10.7%) and portal vein thrombosis (2.3–9.1%). Patient and graft overall 5-y survival correspond to 76% and 74%, respectively. Regarding the donor, morbidity rate ranges from 12.4% to 28.3%, with a national mortality rate of 0.14%. In conclusion, Brazilian LDLT programs enhance international experience that this is a feasible and safe procedure, as well as an excellent alternative strategy to overcome organs shortage. PMID:27115012

  18. Living donor liver transplantation in Brazil-current state.

    PubMed

    Andraus, Wellington; Canedo, Bernardo F; D'Alburquerque, Luiz A C

    2016-04-01

    Currently in Brazil, living donor liver transplantation (LDLT) represents 8.5% of liver transplantation (LT), being the majority pediatric one. Up to now, according to Brazilian Organ Transplantation Association (ABTO) annual report, 2,086 procedures have been done nationwide, most of them in southeast and south regions. Based on national centers reports, biliary complication is the most common recipient postoperative complication (14.5-20.6%), followed by hepatic artery thrombosis (3.1-10.7%) and portal vein thrombosis (2.3-9.1%). Patient and graft overall 5-y survival correspond to 76% and 74%, respectively. Regarding the donor, morbidity rate ranges from 12.4% to 28.3%, with a national mortality rate of 0.14%. In conclusion, Brazilian LDLT programs enhance international experience that this is a feasible and safe procedure, as well as an excellent alternative strategy to overcome organs shortage. PMID:27115012

  19. Carotenoid Excited State Kinetics in Bacterial RCs with the Primary Electron Donor Oxidized

    NASA Astrophysics Data System (ADS)

    Lin, Su; Katilius, Evaldas; Woodbury, Neal W.

    Carotenoid singlet excited state kinetics in wild type reaction centers from Rhodobacter sphaeroides was investigated using ultrafast laser spectroscopy under conditions where the primary electron donor is either neutral or oxidized.

  20. Bi donor hyperfine state populations studied by optical transitions of donor bound excitons in enriched {sup 28}Si

    SciTech Connect

    Ilkhchy, K. Saeedi; Steger, M.; Thewalt, M. L. W.; Abrosimov, N.; Riemann, H.; Becker, P.; Pohl, H.-J.

    2013-12-04

    We report on the first optical studies of Bi donor bound excitons in {sup 28}Si, using absorption rather than emission spectroscopy, and a new noncontact photoconductivity method which has much higher sensitivity and spectral resolution than photoluminescence spectroscopy. Individual hyperfine components of this potential semiconductor qubit can be resolved under an applied magnetic field, and we find that strong nonresonant optical hyperpolarization towards both the I{sub z} = +9/2 and −9/2 hyperfine states can be observed, depending on the intensity of the above-gap excitation.

  1. Femtosecond electron injection from optically populated donor states into the conduction band of semiconductors

    NASA Astrophysics Data System (ADS)

    Ernstorfer, Ralph; Toeben, Lars; Gundlach, Lars; Felber, Silke; Galoppini, Elena; Wei, Qian; Eichberger, Rainer; Storck, Winfried; Zimmermann, Carsten; Willig, Frank

    2003-12-01

    Unoccupied donor states can be populated via light absorption at the surface of semiconductor in the range of the conduction band levels. Hot electrons are injected from such donor states into the conduction band of a semiconductor on a femtosecond time scale. Such donor states can have rather different physical properties, e.g. unoccupied surface bands formed via reconstruction of the clean surface of a semiconductor in contact with ultra high vacuum or chromophores in molecules that are anchored at the surface of the semiconductor. The energy levels of the donor states with respect to the bands in the semiconductor can be determined with UPS and fs-2PPE. Experimental data on the energetics and dynamics of electron injection are presented for the two different cases of donor states mentioned above. The influence of vibrational wavepackets on electron injection is discussed for the case of a molecular donor state. Energy loss of the hot electrons injected into the semiconductor is measured with energy and time resolution employing femtosecond two-photon-photoemission.

  2. Localization and magnetism of the resonant impurity states in Ti doped PbTe

    SciTech Connect

    Wiendlocha, Bartlomiej

    2014-09-29

    The problem of localization of the resonant impurity states is discussed for an illustrative example of Titanium doped Lead Telluride. Electronic structure of PbTe:Ti is studied using first principles methods, densities of states, and Bloch spectral functions are analyzed. We show that Ti creates resonant states in the conduction band of PbTe, however, spectral functions of the system strongly suggest localization of these states and show poor hybridization with PbTe electronic structure. The contrast between results presented here and previously reported spectral functions for PbTe:Tl correlate very well with the different effect of those impurities on thermopower (S) of PbTe, which is large increase is S for PbTe:Tl and almost no effect on S for PbTe:Ti. Moreover, magnetic properties of the system are studied and formation of magnetic moments on Ti atoms is found, both for ordered (ferromagnetic) and disordered (paramagnetic-like) phases, showing that PbTe:Ti can be a magnetic semiconductor.

  3. The nature of excited states in dipolar donor/fullerene complexes for organic solar cells: evolution with the donor stack size.

    PubMed

    Shen, Xingxing; Han, Guangchao; Yi, Yuanping

    2016-06-21

    Electronic delocalization at donor/acceptor (D/A) interfaces can play an important role in photocurrent generation for organic solar cells. Here, we have investigated the nature of local excited and interfacial charge transfer (CT) states in model complexes including one to four anti-parallel stacking dipolar donor (DTDCTB) molecules and one fullerene (C60) molecule by means of density functional theory (DFT) and time-dependent DFT (TDDFT). For all the donor-to-acceptor CT states, despite the number of DTDCTB molecules in the complexes, the hole is mainly localized on a single DTDCTB, and moves farther away from C60 for the energy higher level. However, the highest occupied molecular orbitals (HOMOs) and the excitonic states (EX) including the bright and dark EX are delocalized over the whole donor stacks in the complexes. This implies that the formation of ordered DTDCTB arrangements can substantially shorten the exciton diffusion process and facilitate ultrafast charge generation. Interestingly, owing to strong intermolecular Coulomb attraction, the donor-to-donor CT states are situated below the local excited states, but can approach the donor-to-acceptor CT states, indicating a weak role as charge traps. Our work would be helpful for understanding the electronic delocalization effects in organic solar cells. PMID:27241621

  4. Deceased donor organ procurement injuries in the United States

    PubMed Central

    Taber, Tim E; Neidlinger, Nikole A; Mujtaba, Muhammad A; Eidbo, Elling E; Cauwels, Roxane L; Hannan, Elizabeth M; Miller, Jennifer R; Paramesh, Anil S

    2016-01-01

    AIM: To determine the incidence of surgical injury during deceased donor organ procurements. METHODS: Organ damage was classified into three tiers, from 1-3, with the latter rendering the organ non-transplantable. For 12 consecutive months starting in January of 2014, 36 of 58 organ procurement organization’s (OPO)’s prospectively submitted quality data regarding organ damage (as reported by the transplanting surgeon and confirmed by the OPO medical director) seen on the procured organ. RESULTS: These 36 OPOs recovered 5401 of the nations’s 8504 deceased donors for calendar year 2014. A total of 19043 organs procured were prospectively analyzed. Of this total, 59 organs sustained damage making them non-transplantable (0 intestines; 4 pancreata; 5 lungs; 6 livers; 43 kidneys). The class 3 damage was spread over 22 (of 36) reporting OPO’s. CONCLUSION: While damage to the procured organ is rare with organ loss being approximately 0.3% of procured organs, loss of potential transplantable organs does occur during procurement. PMID:27358788

  5. The linear and nonlinear optical properties of a hydrogenic donor impurity in a nanowire superlattice: Effects of laser radiation and hydrostatic pressure

    NASA Astrophysics Data System (ADS)

    Safarpour, Gh.; Izadi, M. A.; Khajehei, N.; Dialameh, M.

    2014-12-01

    The effects of laser radiation and hydrostatic pressure on the linear and nonlinear optical properties of an impure GaAs/Ga1-xAlxAs nanowire superlattice (NWSL) are analyzed using the finite difference method and compact density-matrix approach. In this regards the transition between ground and first excited states is considered to obtain linear, third order nonlinear and total optical absorption coefficients (ACs) and refractive index (RI) changes. Our calculations show that presence of laser radiation causes an increment in ACs and RI changes and shifts optical spectrum towards lower energies. Additionally, applying pressure leads to a decrement in ACs and RI changes with a small blue shift in the spectrum. Moreover, the nonlinear terms of ACs and RI changes are very sensitive to laser radiation and pressure, and saturation in optical spectrum can be adjusted by magnitudes of laser radiation and pressure.

  6. Lifetime reduction of surface states at Cu, Ag, and Au(111) caused by impurity scattering

    NASA Astrophysics Data System (ADS)

    Heers, Swantje; Mavropoulos, Phivos; Lounis, Samir; Zeller, Rudolf; Blügel, Stefan

    2012-09-01

    We present density-functional results on the lifetime of the (111) surface state of the noble metals. We consider scattering on the Fermi surface caused by impurity atoms belonging to the 3d and 4sp series. The results are analyzed with respect to film thickness and with respect to separation of scattering into bulk or into surface states. While for impurities in the surface layer the overall trends are similar to the long-known bulk-state scattering, for adatom-induced scattering we find a surprising behavior with respect to the adatom atomic number. A plateau emerges in the scattering rate of the 3d adatoms, instead of a peak characteristic of the d resonance. Additionally, the scattering rate of 4sp adatoms changes in a zigzag pattern, contrary to a smooth parabolic increase following Linde's rule that is observed in bulk. We interpret these results in terms of the weaker charge screening and of interference effects induced by the lowering of symmetry at the surface.

  7. Deconstructing the Risk for Malaria in United States Donors Deferred for Travel to Mexico

    PubMed Central

    Spencer, Bryan; Kleinman, Steven; Custer, Brian; Cable, Ritchard; Wilkinson, Susan L; Steele, Whitney; High, Patrick M; Wright, David

    2013-01-01

    Background More than 66,000 blood donors are deferred annually in the U.S. due to travel to malaria-endemic areas of Mexico. Mexico accounts for the largest share of malaria travel deferrals, yet it has extremely low risk for malaria transmission throughout most of its national territory, suggesting a suboptimal balance between blood safety and availability. This study sought to determine whether donor deferral requirements might be relaxed for parts of Mexico without compromising blood safety. Study Design and Methods Travel destination was recorded from a representative sample of presenting blood donors deferred for malaria travel from six blood centers during 2006. We imputed to these donors reporting Mexican travel a risk for acquiring malaria equivalent to Mexican residents in the destination location, adjusted for length of stay. We extrapolated these results to the overall U.S. blood donor population. Results Risk for malaria in Mexico varies significantly across endemic areas and is greatest in areas infrequently visited by study donors. Over 70% of blood donor deferrals were triggered by travel to the state of Quintana Roo on the Yucatán Peninsula, an area of very low malaria transmission. Eliminating the travel deferral requirement for all areas except the state of Oaxaca might result in the recovery of almost 65,000 blood donors annually at risk of approximately one contaminated unit collected every 20 years. Conclusion Deferral requirements should be relaxed for presenting donors who travelled to areas within Mexico that confer exceptionally small risks for malaria, such as Quintana Roo. PMID:21564102

  8. Distribution of impurity states and charge transport in Zr0.25Hf0.75Ni1+xSn1-ySby nanocomposites

    NASA Astrophysics Data System (ADS)

    Liu, Yuanfeng; Makongo, Julien P. A.; Page, Alexander; Sahoo, Pranati; Uher, Ctirad; Stokes, Kevin; Poudeu, Pierre F. P.

    2016-02-01

    Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr0.25Hf0.75Ni1+xSn1-ySby (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr0.25Hf0.75Ni1+xSn1-ySby samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr0.25Hf0.75Ni1+xSn1-ySby (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr0.25Hf0.75Ni1+xSn0.995Sb0.005 samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors.

  9. Atomistic simulations of negatively charged donor states probed in STM experiments

    NASA Astrophysics Data System (ADS)

    Tankasala, Archana; Salfi, Joe; Rogge, Sven; Klimeck, Gerhard; Rahman, Rajib

    A single donor in silicon binding two electrons (D-) is important for electron spin readout and two-qubit operations in a donor based silicon (Si) quantum computer, and has recently been probed in Scanning Tunneling Microscope (STM) experiments for sub-surface dopants. In this work, atomistic configuration interaction technique is used to compute the two-electron states of the donor taking into account the geometry of the STM-vacuum-silicon-reservoir device. While 45 meV charging energy is obtained for D- in bulk Si, the electrostatics of the device reduces the charging energy to 30 meVs. It is also shown that the reduced charging energy enables spin triplet states to be bound to the donor. The exchange splitting between the singlet and triplet states can be tuned by an external electric field. The computed wavefunctions of the D- state helps to understand how the contribution of the momentum space valley states change with donor depth and electric field.

  10. Impurity effects on the d-wave state of the pair tunneling mechanism for high-T{sub c} superconductors

    SciTech Connect

    Bang, Y.

    1998-01-01

    We consider the impurity effects on the d-wave state in Anderson{close_quote}s interlayer pair tunneling (IPT) mechanism for high-T{sub c} superconductors. We found that the change of density of states and the T{sub c} suppression with impurities are qualitatively the same as the conventional BCS-type d-wave theory despite different gap equations. In particular, for the T{sub c} suppression with the in-plane impurities we solve the T{sub c} equation of the IPT mechanism explicitly including strong inelastic scattering [{Sigma}{sup {double_prime}}{approximately}{alpha}({h_bar}w+{pi}k{sub B}T)]. As expected, the effect of impurities for the T{sub c} suppression is strongly reduced by inelastic scattering and the results can fit most of the experimental data by varying the impurity scattering strength. The insensitivity of T{sub c} with the out-of-plane rare-earth impurities is shown to be consistent with the IPT mechanism. {copyright} {ital 1998} {ital The American Physical Society}

  11. Probing the electronic states and impurity effects in black phosphorus vertical heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Xiaolong; Wang, Lin; Wu, Yingying; Gao, Heng; Wu, Yabei; Qin, Guanhua; Wu, Zefei; Han, Yu; Xu, Shuigang; Han, Tianyi; Ye, Weiguang; Lin, Jiangxiazi; Long, Gen; He, Yuheng; Cai, Yuan; Ren, Wei; Wang, Ning

    2016-03-01

    Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap structures. However, the charge-carrier mobility in few-layer phosphorene (monolayer BP) is mainly limited by the presence of impurity and disorders. In this study, we demonstrate that vertical BP heterostructure devices offer great advantages in probing the electron states of monolayer and few-layer phosphorene at temperatures down to 2 K through capacitance spectroscopy. Electronic states in the conduction and valence bands of phosphorene are accessible over a wide range of temperature and frequency. Exponential band tails have been determined to be related to disorders. Unusual phenomena such as the large temperature-dependence of the electron state population in few-layer phosphorene have been observed and systematically studied. By combining the first-principles calculation, we identified that the thermal excitation of charge trap states and oxidation-induced defect states were the main reasons for this large temperature dependence of the electron state population and degradation of the on-off ratio in phosphorene field-effect transistors.

  12. Origin of major donor states in In–Ga–Zn oxide

    SciTech Connect

    Nakashima, Motoki; Oota, Masashi; Ishihara, Noritaka; Nonaka, Yusuke; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi

    2014-12-07

    To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V{sub O}), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V{sub O} sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V{sub O} and H in crystalline InGaO{sub 3}(ZnO){sub m} (m = 1). The results indicate that when H is trapped in V{sub O}, a stable complex is created that serves as a shallow-level donor.

  13. Origin of major donor states in In-Ga-Zn oxide

    NASA Astrophysics Data System (ADS)

    Nakashima, Motoki; Oota, Masashi; Ishihara, Noritaka; Nonaka, Yusuke; Hirohashi, Takuya; Takahashi, Masahiro; Yamazaki, Shunpei; Obonai, Toshimitsu; Hosaka, Yasuharu; Koezuka, Junichi

    2014-12-01

    To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (VO), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of VO sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of VO and H in crystalline InGaO3(ZnO)m (m = 1). The results indicate that when H is trapped in VO, a stable complex is created that serves as a shallow-level donor.

  14. Quantum confined acceptors and donors in InSe nanosheets

    SciTech Connect

    Mudd, G. W.; Patanè, A. Makarovsky, O.; Eaves, L.; Kudrynskyi, Z. R.; Kovalyuk, Z. D.; Fay, M. W.; Zólyomi, V.; Falko, V.

    2014-12-01

    We report on the radiative recombination of photo-excited carriers bound at native donors and acceptors in exfoliated nanoflakes of nominally undoped rhombohedral γ-polytype InSe. The binding energies of these states are found to increase with the decrease in flake thickness, L. We model their dependence on L using a two-dimensional hydrogenic model for impurities and show that they are strongly sensitive to the position of the impurities within the nanolayer.

  15. A Framework for Conducting Deceased Donor Research in the United States.

    PubMed

    Glazier, Alexandra K; Heffernan, Kate Gallin; Rodrigue, James R

    2015-11-01

    There are a number of regulatory barriers both perceived and real that have hampered widespread clinical research in the field of donation and transplantation. This article sets forth a framework clarifying the existing legal requirements and their application to the conduct of research on deceased donors and donor organs within the United States. Recommendations are focused on resolving some of the ambiguity surrounding deceased donor authorization for research, Health Insurance Portability and Accountability Act requirements and the role of institutional review board oversight. The successful conduct of clinical research in the field of donation and transplantation requires an understanding of these regulatory nuances as well as identification of important ethical principles to consider. Facilitation of these concepts will ultimately provide support for innovative research designed to increase the availability of organs for transplantation. Further work identifying the optimal infrastructure for overview of clinical research in the field should be given priority. PMID:26244717

  16. PREVALENCE OF CHAGAS DISEASE AMONG BLOOD DONOR CANDIDATES IN TRIANGULO MINEIRO, MINAS GERAIS STATE, BRAZIL

    PubMed Central

    LOPES, Patrícia da Silva; RAMOS, Eliezer Lucas Pires; GÓMEZ-HERNÁNDEZ, César; FERREIRA, Gabriela Lícia Santos; REZENDE-OLIVEIRA, Karine

    2015-01-01

    Despite public health campaigns and epidemiological surveillance activities, Chagas disease remains a major health problem in Latin America. According to data from the World Health Organization, there are approximately 7-8 million people infected with Trypanosoma cruzi worldwide, a large percentage of which in Latin America. This study aims to examine the serological profile of blood donors in blood banks of Hemominas hematology center, in the town of Ituiutaba, Minas Gerais State, Brazil. The study sample consisted of 53,941 blood donors, which were grouped according to gender and age. Sample collections were performed from January 1991 to December 2011, and 277 donors (0.5%) were considered serologically ineligible due to Chagas disease. Analysis of data showed no significant difference between genders. As for age, the highest proportion of ineligible donors was from 40 to 49 years (30%), and there was a positive correlation between increasing age and the percentage of patients seropositive for Chagas disease. Therefore, adopting strategies that allow the safe identification of donors with positive serology for Chagas disease is essential to reduce or eliminate indeterminate serological results. PMID:27049698

  17. PREVALENCE OF CHAGAS DISEASE AMONG BLOOD DONOR CANDIDATES IN TRIANGULO MINEIRO, MINAS GERAIS STATE, BRAZIL.

    PubMed

    Lopes, Patrícia da Silva; Ramos, Eliezer Lucas Pires; Gómez-Hernández, César; Ferreira, Gabriela Lícia Santos; Rezende-Oliveira, Karine

    2015-12-01

    Despite public health campaigns and epidemiological surveillance activities, Chagas disease remains a major health problem in Latin America. According to data from the World Health Organization, there are approximately 7-8 million people infected with Trypanosoma cruzi worldwide, a large percentage of which in Latin America. This study aims to examine the serological profile of blood donors in blood banks of Hemominas hematology center, in the town of Ituiutaba, Minas Gerais State, Brazil. The study sample consisted of 53,941 blood donors, which were grouped according to gender and age. Sample collections were performed from January 1991 to December 2011, and 277 donors (0.5%) were considered serologically ineligible due to Chagas disease. Analysis of data showed no significant difference between genders. As for age, the highest proportion of ineligible donors was from 40 to 49 years (30%), and there was a positive correlation between increasing age and the percentage of patients seropositive for Chagas disease. Therefore, adopting strategies that allow the safe identification of donors with positive serology for Chagas disease is essential to reduce or eliminate indeterminate serological results. PMID:27049698

  18. Edge states, spin transport, and impurity-induced local density of states in spin-orbit coupled graphene

    NASA Astrophysics Data System (ADS)

    Seshadri, Ranjani; Sengupta, K.; Sen, Diptiman

    2016-01-01

    We study graphene, which has both spin-orbit coupling (SOC), taken to be of the Kane-Mele form, and a Zeeman field induced due to proximity to a ferromagnetic material. We show that a zigzag interface of graphene having SOC with its pristine counterpart hosts robust chiral edge modes in spite of the gapless nature of the pristine graphene; such modes do not occur for armchair interfaces. Next we study the change in the local density of states (LDOS) due to the presence of an impurity in graphene with SOC and Zeeman field, and demonstrate that the Fourier transform of the LDOS close to the Dirac points can act as a measure of the strength of the spin-orbit coupling; in addition, for a specific distribution of impurity atoms, the LDOS is controlled by a destructive interference effect of graphene electrons which is a direct consequence of their Dirac nature. Finally, we study transport across junctions, which separates spin-orbit coupled graphene with Kane-Mele and Rashba terms from pristine graphene both in the presence and absence of a Zeeman field. We demonstrate that such junctions are generally spin active, namely, they can rotate the spin so that an incident electron that is spin polarized along some direction has a finite probability of being transmitted with the opposite spin. This leads to a finite, electrically controllable, spin current in such graphene junctions. We discuss possible experiments that can probe our theoretical predictions.

  19. Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface

    SciTech Connect

    Savinov, S. V.; Oreshkin, A. I. E-mail: oreshkin@spmlab.ru; Oreshkin, S. I.; Haesendonck, C. van

    2015-06-15

    We numerically model the Ge(111)-(2 × 1) surface electronic properties in the vicinity of a P donor impurity atom located near the surface. We find a notable increase in the surface local density of states (LDOS) around the surface dopant near the bottom of the empty surface state band π*, which we call a split state due to its limited spatial extent and energetic position inside the band gap. We show that despite the well-established bulk donor impurity energy level position at the very bottom of the conduction band, a surface donor impurity on the Ge(111)-(2 × 1) surface might produce an energy level below the Fermi energy, depending on the impurity atom local environment. It is demonstrated that the impurity located in subsurface atomic layers is visible in a scanning tunneling microscope (STM) experiment on the Ge(111)-(2 × 1) surface. The quasi-1D character of the impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of the impurity atom. We elaborate a model that allows classifying atoms on the experimental low-temperature STM image. We show the presence of spatial oscillations of the LDOS by the density-functional theory method.

  20. Hepatitis C virus infection in blood donors from the state of Puebla, Mexico

    PubMed Central

    2010-01-01

    Background Worldwide, 130 million persons are estimated to be infected with HCV. Puebla is the Mexican state with the highest mortality due to hepatic cirrhosis. Therefore, it is imperative to obtain epidemiological data on HCV infection in asymptomatic people of this region. The objective of present study was to analyze the prevalence of antibodies and genotypes of hepatitis C virus (HCV) in blood donors from Puebla, Mexico. Results The overall prevalence was 0.84% (515/61553). Distribution by region was: North, 0.86% (54/6270); Southeast, 1.04% (75/7197); Southwest, 0.93% (36/3852); and Central, 0.79% (350/44234). Ninety-six donors were enrolled for detection and genotyping of virus, from which 37 (38.5%) were HCV-RNA positive. Detected subtypes were: 1a (40.5%), 1b (27.0%), mixed 1a/1b (18.9%), undetermined genotype 1 (5.4%), 2a (2.7%), 2b (2.7%), and mixed 1a/2a (2.7%). All recovered donors with S/CO > 39 were HCV-RNA positive (11/11) and presented elevated ALT; in donors with S/CO < 39 HCV-RNA, positivity was of 30.4%; and 70% had normal values of ALT. The main risk factors associated with HCV infection were blood transfusion and surgery. Conclusions HCV prevalence of donors in Puebla is similar to other Mexican states. The most prevalent genotype is 1, of which subtype 1a is the most frequent. PMID:20100349

  1. Three-body bound states of two bosonic impurities immersed in a Fermi sea in 2D

    NASA Astrophysics Data System (ADS)

    Bellotti, F. F.; Frederico, T.; Yamashita, M. T.; Fedorov, D. V.; Jensen, A. S.; Zinner, N. T.

    2016-04-01

    We consider two identical impurities immersed in a Fermi sea for a broad range of masses and for both interacting and non-interacting impurities. The interaction between the particles is described through attractive zero-range potentials and the problem is solved in momentum space. The two impurities can attach to a fermion from the sea and form three-body bound states. The energy of these states increase as function of the Fermi momentum k F, leading to three-body bound states below the Fermi energy. The fate of the states depends highly on two- and three-body thresholds and we find evidence of medium-induced Borromean-like states in 2D. The corrections due to particle-hole fluctuations in the Fermi sea are considered in the three-body calculations and we show that in spite of the fact that they strongly affect both the two- and three-body systems, the correction to the point at which the three-body states cease to exist is small.

  2. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

    PubMed

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 10(18) cm(-3) has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  3. Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

    PubMed Central

    Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong

    2016-01-01

    In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1−xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1−xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm−3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports. PMID:26777294

  4. Measurement of excited states of Sb impurity in Si by traveling–wave method

    SciTech Connect

    Sun, Yong; Takase, Tsuyoshi; Sakaino, Masamichi; Miyasato, Tatsuro

    2012-07-01

    The ground and excited states of Sb atom in Si, 1s (A{sub 1}), 1s (T{sub 2}), 1s (E), and 2p{sup 0}, were measured by using a traveling-wave method. The Sb-doped Si crystal with donor concentration of 2 × 10{sup 15} cm{sup −3} was placed the distance of 5 μm above a piezoelectric crystal in the fringe field of a surface acoustic wave. The free electrons excited from the bound states of the Sb atom are drifted by the traveling-wave, and thus lose their energy as the Joule heat through lattice and ion scattering processes. A strong temperature-dependent energy loss of the traveling-wave can be observed at temperatures below 200 K. The values of the bound states of the Sb atom can be characterized by using the Arrhenius plot for thermal activation process of the electrons in the bound states. The measurements were carried out at two frequencies of the traveling-wave, 50 MHz and 200 MHz. At the frequency of 50 MHz, the dielectric properties of the Si crystal are governed by dopant polarization but by electronic polarization at 200 MHz. We found that measurement accuracy of the bound states depends mainly on the electron mobility and the dielectric constant of the Si crystal, which are sensitive to the frequency and strength of the traveling-wave as well as electronic polarization properties of the Si crystal.

  5. The Impact of Heterogeneity and Dark Acceptor States on FRET: Implications for Using Fluorescent Protein Donors and Acceptors

    PubMed Central

    Vogel, Steven S.; Nguyen, Tuan A.; van der Meer, B. Wieb; Blank, Paul S.

    2012-01-01

    Förster resonance energy transfer (FRET) microscopy is widely used to study protein interactions in living cells. Typically, spectral variants of the Green Fluorescent Protein (FPs) are incorporated into proteins expressed in cells, and FRET between donor and acceptor FPs is assayed. As appreciable FRET occurs only when donors and acceptors are within 10 nm of each other, the presence of FRET can be indicative of aggregation that may denote association of interacting species. By monitoring the excited-state (fluorescence) decay of the donor in the presence and absence of acceptors, dual-component decay analysis has been used to reveal the fraction of donors that are FRET positive (i.e., in aggregates)._However, control experiments using constructs containing both a donor and an acceptor FP on the same protein repeatedly indicate that a large fraction of these donors are FRET negative, thus rendering the interpretation of dual-component analysis for aggregates between separately donor-containing and acceptor-containing proteins problematic. Using Monte-Carlo simulations and analytical expressions, two possible sources for such anomalous behavior are explored: 1) conformational heterogeneity of the proteins, such that variations in the distance separating donor and acceptor FPs and/or their relative orientations persist on time-scales long in comparison with the excited-state lifetime, and 2) FP dark states. PMID:23152925

  6. Emergence of magnetic topological states in topological insulators doped with magnetic impurities

    NASA Astrophysics Data System (ADS)

    Tran, Minh-Tien; Nguyen, Hong-Son; Le, Duc-Anh

    2016-04-01

    Emergence of the topological invariant and the magnetic moment in topological insulators doped with magnetic impurities is studied based on a mutual cooperation between the spin-orbit coupling of electrons and the spin exchange of these electrons with magnetic impurity moments. The mutual cooperation is realized based on the Kane-Mele model in the presence of magnetic impurities. The topological invariants and the spontaneous magnetization are self-consistently determined within the dynamical mean-field theory. We find different magnetic topological phase transitions, depending on the electron filling. At half filling an antiferromagnetic topological insulator, which exhibits the quantum spin Hall effect, exists in the phase region between the paramagnetic topological insulator and the trivially topological antiferromagnetic insulator. At quarter and three-quarter fillings, a ferromagnetic topological insulator, which exhibits the quantum anomalous Hall effect, occurs in the strong spin-exchange regime.

  7. Impurity-modulated Aharonov-Bohm oscillations and intraband optical absorption in quantum dot-ring nanostructures

    NASA Astrophysics Data System (ADS)

    Barseghyan, M. G.; Manaselyan, A. Kh.; Laroze, D.; Kirakosyan, A. A.

    2016-07-01

    In this work we study the electronic states in quantum dot-ring complex nanostructures with an on-center hydrogenic impurity. The influence of the impurity on Aharonov-Bohm energy spectra oscillations and intraband optical absorption is investigated. It is shown that in the presence of a hydrogenic donor impurity the Aharonov-Bohm oscillations in quantum dot-ring structures become highly tunable. Furthermore, the presence of the impurity drastically changes the intraband absorption spectra due to the strong controllability of the electron localization type.

  8. Electrical flicker-noise generated by filling and emptying of impurity states in injectors of quantum-cascade lasers

    SciTech Connect

    Yamanishi, Masamichi Hirohata, Tooru; Hayashi, Syohei; Fujita, Kazuue; Tanaka, Kazunori

    2014-11-14

    Free running line-widths (>100 kHz), much broader than intrinsic line-widths ∼100 Hz, of existing quantum-cascade lasers are governed by strong flicker frequency-noise originating from electrical flicker noise. Understanding of microscopic origins of the electrical flicker noises in quantum-cascade lasers is crucially important for the reduction of strength of flicker frequency-noise without assistances of any type of feedback schemes. In this article, an ad hoc model that is based on fluctuating charge-dipoles induced by electron trappings and de-trappings at indispensable impurity states in injector super-lattices of a quantum-cascade laser is proposed, developing theoretical framework based on the model. The validity of the present model is evaluated by comparing theoretical voltage-noise power spectral densities based on the model with experimental ones obtained by using mid-infrared quantum-cascade lasers with designed impurity-positioning. The obtained experimental results on flicker noises, in comparison with the theoretical ones, shed light on physical mechanisms, such as the inherent one due to impurity states in their injectors and extrinsic ones due to surface states on the ridge-walls and due to residual deep traps, for electrical flicker-noise generation in existing mid-infrared quantum-cascade lasers. It is shown theoretically that quasi-delta doping of impurities in their injectors leads to strong suppression of electrical flicker noise by minimization of the dipole length at a certain temperature, for instance ∼300 K and, in turn, is expected to result in substantial narrowing of the free running line-width down below 10 kHz.

  9. Impurity Studies of Cd(0.8)Zn(0.2)Te Crystals Using Photoluminescence and Glow Discharge Mass Spectroscopy

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Lehoczky, Sandor L.; Scripa, Rosalie N.

    2005-01-01

    Cd(1-x)Zn(x)Te semiconductor crystal is a highly promising material for room temperature x- and gamma-ray detector applications because of its high resistivity, long carrier lifetime, and relatively high hole and electron mobilities. This paper reports the investigation of the impurities in several Cd(1-x)Zn(x)Te (x = 0.20) crystals grown using the vertical Bridgman method under a Cd overpressure. The impurity concentrations were measured using glow discharge mass spectroscopy (GDMS). The energy states of the impurities were studied using photoluminescence (PL) spectroscopy at liquid helium temperature. The PL spectra showed a series of sharp high energy lines which are associated with free excitons and excitons bound to impurities as donors and acceptors in the crystals. The impurities also contributed to donor-acceptor pair recombination. The correlation between the GDMS and PL results will be reported.

  10. Trends and Outcomes for Donor Oocyte Cycles in the United States, 2000–2010

    PubMed Central

    Kawwass, Jennifer F.; Monsour, Michael; Crawford, Sara; Kissin, Dmitry M.; Session, Donna R.; Kulkarni, Aniket D.; Jamieson, Denise J.

    2015-01-01

    IMPORTANCE The prevalence of oocyte donation for in vitro fertilization (IVF) has increased in the United States, but little information is available regarding maternal or infant outcomes to improve counseling and clinical decision making. OBJECTIVES To quantify trends in donor oocyte cycles in the United States and to determine predictors of a good perinatal outcome among IVF cycles using fresh (noncryopreserved) embryos derived from donor oocytes. DESIGN, SETTING, AND PARTICIPANTS Analysis of data from the Centers for Disease Control and Prevention’s National ART Surveillance System, to which fertility centers are mandated to report and which includes data on more than 95% of all IVF cycles performed in the United States. Data from 2000 to 2010 described trends. Data from 2010 determined predictors. MAIN OUTCOMES AND MEASURES Good perinatal outcome, defined as a singleton live-born infant delivered at 37 weeks or later and weighing 2500 g or more. RESULTS From 2000 to 2010, data from 443 clinics (93% of all US fertility centers) were included. The annual number of donor oocyte cycles significantly increased, from 10 801 to 18 306. Among all donor oocyte cycles, an increasing trend was observed from 2000 to 2010 in the proportion of cycles using frozen (vs fresh) embryos (26.7% [95% CI, 25.8%–27.5%] to 40.3% [95% CI, 39.6%–41.1%]) and elective single-embryo transfers (vs transfer of multiple embryos) (0.8% [95% CI, 0.7%–1.0%]to 14.5% [95% CI, 14.0%–15.1%]). Good perinatal outcomes increased from 18.5% (95% CI, 17.7%–19.3%) to 24.4% (95% CI, 23.8%–25.1%) (P < .001 for all listed trends). Mean donor and recipient ages remained stable at 28 (SD, 2.8) years and 41 (SD, 5.3) years, respectively. In 2010, 396 clinics contributed data. For donor oocyte cycles using fresh embryos (n = 9865), 27.5% (95% CI, 26.6%–28.4%) resulted in good perinatal outcome. Transfer of an embryo at day 5 (adjusted odds ratio [OR], 1.17 [95% CI, 1.04–1.32]) and elective

  11. Tin impurity centers in glassy germanium chalcogenides

    SciTech Connect

    Bordovsky, G. A.; Gladkikh, P. V.; Kozhokar, M. Yu.; Marchenko, A. V.; Seregin, P. P.; Terukov, E. I.

    2011-10-15

    Tin atoms produced by radioactive decay of {sup 119mm}Sn and {sup 119}Sn impurity atoms in the structure of Ge{sub x}S{sub 1-x} and Ge{sub x}Se{sub 1-x} glasses are stabilized in the form of Sn{sup 2+} and Sn{sup 4+} ions and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn{sup 2+} is an ionized acceptor, and Sn{sup 4+} is an ionized donor), whereas the neutral state of the Sn{sup 3+} center appears to be unstable. {sup 119}Sn atoms produced by radioactive decay of {sup 119m}Te impurity atoms in the structure of Ge{sub x}S{sub 1-x} and Ge{sub x}Se{sub 1-x} glasses are stabilized at both chalcogen sites (they are electrically inactive) and germanium sites.

  12. State of deceased donor transplantation in India: A model for developing countries around the world.

    PubMed

    Abraham, Georgi; Vijayan, Madhusudan; Gopalakrishnan, Natarajan; Shroff, Sunil; Amalorpavanathan, Joseph; Yuvaraj, Anand; Nair, Sanjeev; Sundarrajan, Saravanan

    2016-06-24

    Renal replacement therapy (RRT) resources are scarce in India, with wide urban-rural and interstate disparities. The burden of end-stage renal disease is expected to increase further due to increasing prevalence of risk factors like diabetes mellitus. Renal transplantation, the best RRT modality, is increasing in popularity, due to improvements made in public education, the deceased donor transplantation (DDT) programme and the availability of free and affordable transplant services in government hospitals and certain non-governmental philanthropic organizations. There are about 120000 haemodialysis patients and 10000 chronic peritoneal dialysis patients in India, the majority of them waiting for a donor kidney. Shortage of organs, lack of transplant facilities and high cost of transplant in private facilities are major barriers for renal transplantation in India. The DDT rate in India is now 0.34 per million population, among the lowest in the world. Infrastructural development in its infancy and road traffic rules not being strictly implemented by the authorities, have led to road traffic accidents being very common in urban and rural India. Many patients are declared brain dead on arrival and can serve as potential organ donors. The DDT programme in the state of Tamil Nadu has met with considerable success and has brought down the incidence of organ trade. Government hospitals in Tamil Nadu, with a population of 72 million, provide free transplantation facilities for the underprivileged. Public private partnership has played an important role in improving organ procurement rates, with the help of trained transplant coordinators in government hospitals. The DDT programmes in the southern states of India (Tamil Nadu, Kerala, Pondicherry) are advancing rapidly with mutual sharing due to public private partnership providing vital organs to needy patients. Various health insurance programmes rolled out by the governments in the southern states are effective in

  13. State of deceased donor transplantation in India: A model for developing countries around the world

    PubMed Central

    Abraham, Georgi; Vijayan, Madhusudan; Gopalakrishnan, Natarajan; Shroff, Sunil; Amalorpavanathan, Joseph; Yuvaraj, Anand; Nair, Sanjeev; Sundarrajan, Saravanan

    2016-01-01

    Renal replacement therapy (RRT) resources are scarce in India, with wide urban-rural and interstate disparities. The burden of end-stage renal disease is expected to increase further due to increasing prevalence of risk factors like diabetes mellitus. Renal transplantation, the best RRT modality, is increasing in popularity, due to improvements made in public education, the deceased donor transplantation (DDT) programme and the availability of free and affordable transplant services in government hospitals and certain non-governmental philanthropic organizations. There are about 120000 haemodialysis patients and 10000 chronic peritoneal dialysis patients in India, the majority of them waiting for a donor kidney. Shortage of organs, lack of transplant facilities and high cost of transplant in private facilities are major barriers for renal transplantation in India. The DDT rate in India is now 0.34 per million population, among the lowest in the world. Infrastructural development in its infancy and road traffic rules not being strictly implemented by the authorities, have led to road traffic accidents being very common in urban and rural India. Many patients are declared brain dead on arrival and can serve as potential organ donors. The DDT programme in the state of Tamil Nadu has met with considerable success and has brought down the incidence of organ trade. Government hospitals in Tamil Nadu, with a population of 72 million, provide free transplantation facilities for the underprivileged. Public private partnership has played an important role in improving organ procurement rates, with the help of trained transplant coordinators in government hospitals. The DDT programmes in the southern states of India (Tamil Nadu, Kerala, Pondicherry) are advancing rapidly with mutual sharing due to public private partnership providing vital organs to needy patients. Various health insurance programmes rolled out by the governments in the southern states are effective in

  14. Hyperfine Stark effect of shallow donors in silicon

    NASA Astrophysics Data System (ADS)

    Pica, Giuseppe; Wolfowicz, Gary; Urdampilleta, Matias; Thewalt, Mike L. W.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Morton, John J. L.; Bhatt, R. N.; Lyon, S. A.; Lovett, Brendon W.

    2014-11-01

    We present a complete theoretical treatment of Stark effects in bulk doped silicon, whose predictions are supported by experimental measurements. A multivalley effective mass theory, dealing nonperturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1 s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: with no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb, and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as ≈10 MHz.

  15. Honoring our donors: a survey of memorial ceremonies in United States anatomy programs.

    PubMed

    Jones, Trahern W; Lachman, Nirusha; Pawlina, Wojciech

    2014-01-01

    Many anatomy programs that incorporate dissection of donated human bodies hold memorial ceremonies of gratitude towards body donors. The content of these ceremonies may include learners' reflections on mortality, respect, altruism, and personal growth told through various humanities modalities. The task of planning is usually student- and faculty-led with participation from other health care students. Objective information on current memorial ceremonies for body donors in anatomy programs in the United States appears to be lacking. The number of programs in the United States that currently plan these memorial ceremonies and information on trends in programs undertaking such ceremonies remain unknown. Gross anatomy program directors throughout the United States were contacted and asked to respond to a voluntary questionnaire on memorial ceremonies held at their institution. The results (response rate 68.2%) indicated that a majority of human anatomy programs (95.5%) hold memorial ceremonies. These ceremonies are, for the most part, student-driven and nondenominational or secular in nature. Participants heavily rely upon speech, music, poetry, and written essays, with a small inclusion of other humanities modalities, such as dance or visual art, to explore a variety of themes during these ceremonies. PMID:24753299

  16. Electronic properties of substitutional impurities in InGaN monolayer quantum wells

    SciTech Connect

    Alfieri, G.; Tsutsumi, T.; Micheletto, R.

    2015-05-11

    InGaN alloys and, in particular, InGaN monolayer quantum wells (MLQWs) are attracting an increasing amount of interest for opto-electronic applications. Impurities, incorporated during growth, can introduce electronic states that can degrade the performance of such devices. For this reason, we present a density functional and group theoretical study of the electronic properties of C, H, or O impurities in an InGaN MLQW. Analysis of the formation energy and symmetry reveals that these impurities are mostly donors and can be held accountable for the reported degradation of InGaN-based devices.

  17. The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures

    NASA Astrophysics Data System (ADS)

    The Anh, Le; Moraru, Daniel; Manoharan, Muruganathan; Tabe, Michiharu; Mizuta, Hiroshi

    2014-08-01

    We present the density functional theory calculations of the binding energy of the Phosphorus (P) donor electrons in extremely downscaled single P-doped Silicon (Si) nanorods. In past studies, the binding energy of donor electrons was evaluated for the Si nanostructures as the difference between the ionization energy for the single P-doped Si nanostructures and the electron affinity for the un-doped Si nanostructures. This definition does not take into account the strong interaction of donor electron states and Si electron states explicitly at the conductive states and results in a monotonous increase in the binding energy by reducing the nanostructure's dimensions. In this paper, we introduce a new approach to evaluate the binding energy of donor electrons by combining the projected density of states (PDOS) analysis and three-dimensional analysis of associated electron wavefunctions. This enables us to clarify a gradual change of the spatial distribution of the 3D electron wavefunctions (3DWFs) from the donor electron ground state, which is fully localized around the P donor site to the first conductive state, which spreads over the outer Si nanorods contributing to current conduction. We found that the energy of the first conductive state is capped near the top of the atomistic effective potential at the donor site with respect to the surrounding Si atoms in nanorods smaller than about 27 a0. This results in the binding energy of approximately 1.5 eV, which is virtually independent on the nanorod's dimensions. This fact signifies a good tolerance of the binding energy, which governs the operating temperature of the single dopant-based transistors in practice. We also conducted the computationally heavy transmission calculations of the single P-doped Si nanorods connected to the source and drain electrodes. The calculated transmission spectra are discussed in comparison with the atomistic effective potential distributions and the PDOS-3DWFs method.

  18. The impacts of electronic state hybridization on the binding energy of single phosphorus donor electrons in extremely downscaled silicon nanostructures

    SciTech Connect

    The Anh, Le Manoharan, Muruganathan; Moraru, Daniel; Tabe, Michiharu; Mizuta, Hiroshi

    2014-08-14

    We present the density functional theory calculations of the binding energy of the Phosphorus (P) donor electrons in extremely downscaled single P-doped Silicon (Si) nanorods. In past studies, the binding energy of donor electrons was evaluated for the Si nanostructures as the difference between the ionization energy for the single P-doped Si nanostructures and the electron affinity for the un-doped Si nanostructures. This definition does not take into account the strong interaction of donor electron states and Si electron states explicitly at the conductive states and results in a monotonous increase in the binding energy by reducing the nanostructure's dimensions. In this paper, we introduce a new approach to evaluate the binding energy of donor electrons by combining the projected density of states (PDOS) analysis and three-dimensional analysis of associated electron wavefunctions. This enables us to clarify a gradual change of the spatial distribution of the 3D electron wavefunctions (3DWFs) from the donor electron ground state, which is fully localized around the P donor site to the first conductive state, which spreads over the outer Si nanorods contributing to current conduction. We found that the energy of the first conductive state is capped near the top of the atomistic effective potential at the donor site with respect to the surrounding Si atoms in nanorods smaller than about 27 a{sub 0}. This results in the binding energy of approximately 1.5 eV, which is virtually independent on the nanorod's dimensions. This fact signifies a good tolerance of the binding energy, which governs the operating temperature of the single dopant-based transistors in practice. We also conducted the computationally heavy transmission calculations of the single P-doped Si nanorods connected to the source and drain electrodes. The calculated transmission spectra are discussed in comparison with the atomistic effective potential distributions and the PDOS-3DWFs method.

  19. Shallow donors in extended state GaAs/(Al, Ga) As superlattices

    NASA Astrophysics Data System (ADS)

    Duffield, T.; Bhat, R.; Koza, M.; Tamargo, M. C.; Harbison, J. P.; DeRosa, F.; Hwang, D. M.; Grabbe, P.; Allen, S. J.

    1986-11-01

    We have studied the effect of superlattice structure on the 1s to 2p + transition energy of shallow donors. In a strong magnetic field along the growth direction the transition is inhomogeneously broadened with absorption features that can be correlated with the position of the donor with respect to the barriers and wells. The results compare well with recent theory of donors in superlattices and are potentially important for the determination of donor distributions in superlattices.

  20. Energies and wave functions of an off-centre donor in hemispherical quantum dot: Two-dimensional finite difference approach and ritz variational principle

    NASA Astrophysics Data System (ADS)

    Nakra Mohajer, Soukaina; El Harouny, El Hassan; Ibral, Asmaa; El Khamkhami, Jamal; Assaid, El Mahdi

    2016-09-01

    Eigenvalues equation solutions of a hydrogen-like donor impurity, confined in a hemispherical quantum dot deposited on a wetting layer and capped by an insulating matrix, are determined in the framework of the effective mass approximation. Conduction band alignments at interfaces between quantum dot and surrounding materials are described by infinite height barriers. Ground and excited states energies and wave functions are determined analytically and via one-dimensional finite difference approach in case of an on-center donor. Donor impurity is then moved from center to pole of hemispherical quantum dot and eigenvalues equation is solved via Ritz variational principle, using a trial wave function where Coulomb attraction between electron and ionized donor is taken into account, and by two-dimensional finite difference approach. Numerical codes developed enable access to variations of donor total energy, binding energy, Coulomb correlation parameter, spatial extension and radial probability density with respect to hemisphere radius and impurity position inside the quantum dot.

  1. Charge Transfer States in Dilute Donor-Acceptor Blend Organic Heterojunctions.

    PubMed

    Liu, Xiao; Ding, Kan; Panda, Anurag; Forrest, Stephen R

    2016-08-23

    We study the charge transfer (CT) states in small-molecule blend heterojunctions comprising the nonpolar donor, tetraphenyldibenzoperiflanthene (DBP), and the acceptor, C70, using electroluminescence and steady-state and time-resolved photoluminescence spectroscopy along with density functional theory calculations. We find that the CT exciton energy blue shifts as the C70 concentration in the blend is either decreased or increased away from 50 vol %. At 20 K, the increase in CT state lifetime is correlated with the increasing diameter of C70 nanocrystallites in the blends. A quantum confinement model is used to quantitatively describe the dependence of both CT energy and lifetime on the C70 or DBP domain size. Two discrete CT emission peaks are observed for blends whose C70 concentration is >65%, at which point C70 nanocrystallites with diameters >4 nm appear in high-resolution transmission electron micrographs. The presence of two CT states is attributed to coexistence of crystalline C70 and amorphous phases in the blends. Furthermore, analysis of CT dissociation efficiency versus photon energy suggests that the >90% dissociation efficiency of delocalized CT2 states from the crystalline phase significantly contributes to surprisingly efficient photogeneration in highly dilute (>80% C70) DBP/C70 heterojunctions. PMID:27487403

  2. Multiple Charge Transfer States at Ordered and Disordered Donor/Acceptor Interfaces

    NASA Astrophysics Data System (ADS)

    Fusella, Michael; Verreet, Bregt; Lin, Yunhui; Brigeman, Alyssa; Purdum, Geoffrey; Loo, Yueh-Lin; Giebink, Noel; Rand, Barry

    The presence of charge transfer (CT) states in organic solar cells is accepted, but their role in photocurrent generation is not well understood. Here we investigate solar cells based on rubrene and C60 to show that CT state properties are influenced by molecular ordering at the donor/acceptor (D/A) interface. Crystalline rubrene films are produced with domains of 100s of microns adopting the orthorhombic phase, as confirmed by grazing incidence XRD, with the (h00) planes parallel to the substrate. C60 grown atop these films adopts a highly oriented face-centered cubic phase with the (111) plane parallel to the substrate. For this highly ordered system we have discovered the presence of four CT states. Polarized external quantum efficiency (EQE) measurements assign three of these to crystalline origins with the remaining one well aligned with the disordered CT state. Varying the thickness of a disordered blend of rubrene:C60 atop the rubrene template modulates the degree of crystallinity at the D/A interface. Strikingly, this process alters the prominence of the four CT states measured via EQE, and results in a transition from single to multiple electroluminescence peaks. These results underscore the impact of molecular structure at the heterojunction on charge photogeneration.

  3. Density of states determination in organic donor-acceptor blend layers enabled by molecular doping

    NASA Astrophysics Data System (ADS)

    Fischer, Janine; Ray, Debdutta; Kleemann, Hans; Pahner, Paul; Schwarze, Martin; Koerner, Christian; Vandewal, Koen; Leo, Karl

    2015-06-01

    Charge carrier transport is a key parameter determining the efficiency of organic solar cells, and is closely related to the density of free and trapped states. For trap characterization, impedance spectroscopy is a suitable, non-invasive method, applicable to complete organic semiconductor devices. In order to contribute to the capacitive signal, the traps must be filled with charge carriers. Typically, trap filling is achieved by illuminating the device or by injecting charge carriers through application of a forward bias voltage. However, in both cases, the exact number of charge carriers in the device is not known and depends strongly on the measurement conditions. Here, hole trap states of the model blend layer ZnPc:C60 are filled by weak p-doping, enabling trap characterization in a blend layer at a controlled hole density. We evaluate impedance spectra at different temperatures in order to determine the density of occupied states (DOOS) directly from the capacitance-frequency spectra by assuming a simple energy diagram. The reconstructed DOOS distribution is analyzed at different doping concentrations and device thicknesses and compared to thermally stimulated current measurements performed on the same devices. In both methods, a pronounced Gaussian peak at about 0.4 eV below the transport level is found as well as deep, exponential tail states, providing a deeper insight into the density of states distribution of this donor-acceptor blend layer. Additionally, the effect of doping-induced trap filling on the solar cell characteristics is studied in these devices.

  4. The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P

    NASA Astrophysics Data System (ADS)

    Litvinenko, K. L.; Li, Juerong; Stavrias, N.; Meaney, A. J.; Christianen, P. C. M.; Engelkamp, H.; Homewood, K. P.; Pidgeon, C. R.; Murdin, B. N.

    2016-04-01

    We have measured the near-infrared photoluminescence spectrum of phosphorus doped silicon (Si:P) and extracted the donor-bound exciton (D0X) energy at magnetic fields up to 28 T. At high field the Zeeman effect is strongly nonlinear because of the diamagnetic shift, also known as the quadratic Zeeman effect (QZE). The magnitude of the QZE is determined by the spatial extent of the wave-function. High field data allows us to extract values for the radius of the neutral donor (D0) ground state, and the light and heavy hole D0X states, all with more than an order of magnitude better precision than previous work. Good agreement was found between the experimental state radius and an effective mass model for D0. The D0X results are much more surprising, and the radius of the m J = ±3/2 heavy hole is found to be larger than that of the m J = ±1/2 light hole.

  5. Estimation of electronic coupling in π-stacked donor-bridge-acceptor systems: Correction of the two-state model

    NASA Astrophysics Data System (ADS)

    Voityuk, Alexander A.

    2006-02-01

    Comparison of donor-acceptor electronic couplings calculated within two-state and three-state models suggests that the two-state treatment can provide unreliable estimates of Vda because of neglecting the multistate effects. We show that in most cases accurate values of the electronic coupling in a π stack, where donor and acceptor are separated by a bridging unit, can be obtained as Ṽda=(E2-E1)μ12/Rda+(2E3-E1-E2)2μ13μ23/Rda2, where E1, E2, and E3 are adiabatic energies of the ground, charge-transfer, and bridge states, respectively, μij is the transition dipole moments between the states i and j, and Rda is the distance between the planes of donor and acceptor. In this expression based on the generalized Mulliken-Hush approach, the first term corresponds to the coupling derived within a two-state model, whereas the second term is the superexchange correction accounting for the bridge effect. The formula is extended to bridges consisting of several subunits. The influence of the donor-acceptor energy mismatch on the excess charge distribution, adiabatic dipole and transition moments, and electronic couplings is examined. A diagnostic is developed to determine whether the two-state approach can be applied. Based on numerical results, we showed that the superexchange correction considerably improves estimates of the donor-acceptor coupling derived within a two-state approach. In most cases when the two-state scheme fails, the formula gives reliable results which are in good agreement (within 5%) with the data of the three-state generalized Mulliken-Hush model.

  6. Seroprevalence of HTLV-1/2 among blood donors in the state of Maranhão, Brazil

    PubMed Central

    Viana, Graça Maria de Castro; Nascimento, Maria do Desterro Soares Brandão; de Oliveira, Rodrigo Artur Souza; dos Santos, Alessandro Carvalho; Galvão, Carolina de Souza; da Silva, Marcos Antonio Custódio Neto

    2014-01-01

    Background Infection with human T-lymphotropic virus 1 or 2 (HTLV-1/2) is a major health problem. There is a public health policy defining measures for state hematology and hemotherapy centers in Brazil, in order to avoid virus transmission through blood donors. Objective This study aimed to evaluate the seroprevalence of HTLV -1/2 in blood donors in the State of Maranhão, Brazil, during routine blood unit screening. Methods Screening tests of blood donors using the enzyme-linked immunosorbent assay (ELISA) to detect seropositivity for HTLV-1/2 performed at the Hematology and Hemotherapy Center of the State of Maranhão (HEMOMAR) between July of 2003 and December of 2009 were retrospectively evaluated. Results Of the 365,564 blood donors, 561 (0.15%) were HTLV-1/2-positive, of whom 72 (12.8%) performed the confirmatory test (Western blot). In donors who had a confirmatory test, 53 (73.6%) were positive. The ages of the infected individuals ranged from 18 to 65 years; 305 (54%) were aged over 40 years. Among the infected individuals, 309 (55%) were male, 399 (71%) were mixed-race, and 259 (46%) were single. Co-infections were frequently found, especially with hepatitis B (in 68.6% of the cases). Conclusion The results obtained will contribute to the planning and implementation of control measures by the epidemiological surveillance agency of Maranhão, and will also contribute to reducing morbidity. The high seropositivity in a small sample in donors who had confirmatory tests indicates the need for confirmatory tests for all donors who initially test as seropositive. PMID:24624036

  7. Vibrational relaxation of bulk modes perturbed by electronic state of dilute impurities

    NASA Astrophysics Data System (ADS)

    Chang, Ta-Chau; Chou, Shiow-Hwa; Li, Hung-Wen; Lin, Sheng-Hsien

    1993-08-01

    Vibrational dephasing of the 1385 cm-1 vibron of host molecules (naphthalene) perturbed by electronically excited guest molecules (pentacene) was studied by the time-resolved coherent Stokes Raman spectroscopy (CSRS) in the temperature region of 6-26 K. The decay time was faster when the excitation frequency was tuned from the off-resonance to the resonance of the electronic transition of pentacene. For the resonance case, longer decay times were observed at higher temperatures (˜26 K) than at low temperatures (˜6 K). Two possible mechanisms were considered for the inverse temperature behavior. The shorter decay time in the impurity perturbed domains may be attributed to the increase of a coupling strength on the decay channel from 1385 cm-1 mode to 1365 cm-1 mode by stimulating phonon emission.

  8. Ground-state of Two-dimensional Graphene in the Presence of Random Charged Impurities

    NASA Astrophysics Data System (ADS)

    Rossi, Enrico

    2009-03-01

    The low energy electronic excitations of graphene are described by a massless Dirac fermion model. In clean isolated graphene the Fermi energy lies exactly at the Dirac point where the linear chiral electron and hole bands cross each other. Close to the Dirac point the average carrier density vanishes and the density fluctuations are expected to dominate the physics of graphene. In current experiment the fluctuations are mostly due to quenched disorder. In this talk I present the Thomas-Fermi-Dirac (TFD) theory [1] to calculate the carrier density of graphene in presence of disorder. The TFD theory includes the effects of non-linear screening, exchange and correlation. The approach is independent of the disorder source and very efficient allowing the calculation of disorder-averaged quantities that can be directly compared with experiments. Recent transport results strongly suggest that in current graphene samples charge impurities are the main source of disorder. I then present the results of the TFD theory for this case. I show that close to the Dirac point the carrier density breaks-up in electron-hole puddles and is characterized by two types of inhomogeneities: wide regions of low density and sparse narrow regions of high density and a typical correlation length of 10 nm. I present detailed results that show how the disordered averaged quantities characterizing the carrier density profile depend on the experimental parameters. I show that at finite voltages the density probability distribution has a bimodal character providing direct evidence for the existence of puddles over a finite range of gate voltages. In graphene the exchange-correlation term increases with density contrary to parabolic-band electron liquids and because of this it tends to suppress density inhomogeneities. I show that this effect becomes very important close to the Dirac point, especially at low impurity densities.

  9. Effect of a metallic gate on the energy levels of a shallow donor

    SciTech Connect

    Slachmuylders, A. F.; Partoens, B.; Peeters, F. M.; Magnus, W.

    2008-02-25

    We have investigated the effect of a metallic gate on the bound states of a shallow donor located near the gate. We calculate the energy spectrum as a function of the distance between the metallic gate and the donor and find an anticrossing behavior in the energy levels for certain distances. We show how a transverse electric field can tune the average position of the electron with respect to the metallic gate and the impurity.

  10. Cage electron-hydroxyl complex state as electron donor in mayenite

    NASA Astrophysics Data System (ADS)

    Hiraishi, M.; Kojima, K. M.; Miyazaki, M.; Yamauchi, I.; Okabe, H.; Koda, A.; Kadono, R.; Matsuishi, S.; Hosono, H.

    2016-03-01

    It is inferred from the chemical shift of muon spin rotation (μ SR ) spectra that muons implanted in pristine (fully oxidized) mayenite, [Ca12Al14O32] 2 +[□5O2 -] (C12A7, with □ referring to the vacant cage), are bound to O2 - at the cage center to form OMu- (where Mu represents muonium, a muonic analog of the H atom). However, an isolated negatively charged state (Mu-, an analog of H-) becomes dominant when the compound approaches the state of electride [Ca12Al14O32] 2 +[□42 e-] as a result of the reduction process. Moreover, the OMu- state in the pristine specimen exhibits depolarization of paramagnetic origin at low temperatures (below ˜30 K), indicating that OMu- accompanies a loosely bound electron in the cage that can be thermally activated. This suggests that interstitial muons (and hence H) forming a "cage electron-hydroxyl" complex can serve as electron donors in C12A7.

  11. Changes in notification and demographics of deceased donors during the past decade in the state of Michigan, USA.

    PubMed

    Rosenberg, J C; Beyersdorf, T; Pietroski, R

    2005-03-01

    From 1993 to 2003 there have been significant changes in the number and demographics of deceased donors referred to the organ procurement organization (OPO) in the state of Michigan (USA). It was the aim of this study to document the magnitude of these changes and attempt to explain them. There has been a 26-fold increase in the number of reported in-hospital deaths from 1993 to 2003. Most of these calls (96%) concerned patients who were already dead and thus not suitable for organ donation. There has also been a 72% increase in the number of antemortem calls, but there has been only a 30% increase in the number of organ donors, primarily because the majority of the deceased individuals referred for donation (57% in 2003) do not meet the criteria for brain death. The median age of donors over the past 10 years has increased from 31 to 45. The proportion of African-American donors increased from 9.8% in 1993 to 21.3% in 2003. An increase in the age of donors and the increased frequency of cerebrovascular accidents as the cause of death of donors may be a reflection of changes in criteria for donation. Mandatory reporting of hospital deaths has resulted in an increase in notification to the OPO but has not had a major impact on the number of organ donors. On the other hand, increased donation from African-Americans indicates that public information programs may be contributing to the increased donation from this segment of the population. PMID:15848460

  12. Comparing models for the ground state energy of a trapped one-dimensional Fermi gas with a single impurity

    NASA Astrophysics Data System (ADS)

    Loft, N. J. S.; Kristensen, L. B.; Thomsen, A. E.; Zinner, N. T.

    2016-06-01

    We discuss the local density approximation approach to calculating the ground state energy of a one-dimensional Fermi gas containing a single impurity, and compare the results with exact numerical values that we have for up to 11 particles for general interaction strengths and up to 30 particles in the strongly interacting case. We also calculate the contact coefficient in the strongly interacting regime. The different theoretical predictions are compared to recent experimental results with few-atom systems. Firstly, we find that the local density approximation suffers from great ambiguity in the few-atom regime, yet it works surprisingly well for some models. Secondly, we find that the strong interaction theories quickly break down when the number of particles increase or the interaction strength decreases.

  13. Intense laser field and conduction band-edge nonparabolicity effects on hydrogenic impurity states of InGaN QW

    NASA Astrophysics Data System (ADS)

    El Ghazi, Haddou

    2015-09-01

    In this paper, hydrogenic impurity ground-state binding energy in unstrained wurtzite (In, Ga)N symmetric quantum well is investigated. The heterostructure is considered under the action of an intense laser field (ILF) incorporating an additional internal probe as well as the conduction band-edge nonparabolicity effect (CBENP). The variational approach is used within the framework of single band effective-mass approximation with two-parametric 1S-hydrogenic trial wavefunction. The competition effect between internal and external perturbations is also shown. Our results reveal that the binding energy is the largest for the well width around the effective Bohr radius and is strongly influenced by both parameters. Moreover, the principle effect of ILF (CBENP) is to reduce (enhance) the binding energy. It is found that the lift of the conduction band-edge can be easily eliminated by adjusting the ILF-parameter.

  14. The weekend effect alters the procurement and discard rates of deceased donor kidneys in the United States.

    PubMed

    Mohan, Sumit; Foley, Karl; Chiles, Mariana C; Dube, Geoffrey K; Patzer, Rachel E; Pastan, Stephen O; Crew, R John; Cohen, David J; Ratner, Lloyd E

    2016-07-01

    Factors contributing to the high rate of discard among deceased donor kidneys remain poorly understood and the influence of resource limitations of weekends on kidney transplantation is unknown. To quantify this we used data from the Scientific Registry of Transplant Recipients and assembled a retrospective cohort of 181,799 deceased donor kidneys recovered for transplantation from 2000-2013. We identified the impact of the day of the week on the procurement and subsequent utilization or discard of deceased donor kidneys in the United States, as well as report the geographic variation of the impact of weekends on transplantation. Compared with weekday kidneys, organs procured on weekends were significantly more likely to be discarded than transplanted (odds ratio: 1.16; 95% confidence interval: 1.13-1.19), even after adjusting for organ quality (adjusted odds ratio: 1.13; 95% confidence interval: 1.10-1.17). Weekend discards were of a significantly higher quality than weekday discards (Kidney Donor Profile Index: 76.5% vs. 77.3%). Considerable geographic variation was noted in the proportion of transplants that occurred over the weekend. Kidneys available for transplant over the weekend were significantly more likely to be used at larger transplant centers, be shared without payback, and experienced shorter cold ischemia times. Thus, factors other than kidney quality are contributing to the discard of deceased donor kidneys, particularly during weekends. Policy prescriptions, administrative or organizational solutions within transplant programs may potentially mitigate against the recent increase in kidney discards. PMID:27182001

  15. Increasing the Number of Organ Transplants in the United States by Optimizing Donor Authorization Rates.

    PubMed

    Goldberg, D S; French, B; Abt, P L; Gilroy, R K

    2015-08-01

    While recent policies have focused on allocating organs to patients most in need and lessening geographic disparities, the only mechanism to increase the actual number of transplants is to maximize the potential organ supply. We conducted a retrospective cohort study using OPTN data on all "eligible deaths" from 1/1/08 to 11/1/13 to evaluate variability in donor service area (DSA)-level donor authorization rates, and to quantify the potential gains associated with increasing authorization rates. Despite adjustments for donor demographics (age, race/ethnicity, cause of death) and geographic factors (rural/urban status of donor hospital, statewide participation in deceased-donor registries) among 52 571 eligible deaths, there was significant variability (p < 0.001) in donor authorization rates across the 58 DSAs. Overall DSA-level adjusted authorization rates ranged from 63.5% to 89.5% (median: 72.7%). An additional 773-1623 eligible deaths could have been authorized, yielding 2679-5710 total organs, if the DSAs with authorization rates below the median and 75th percentile, respectively, implemented interventions to perform at the level of the corresponding reference DSA. Opportunities exist within the current organ acquisition framework to markedly improve DSA-level donor authorization rates. Such initiatives would mitigate waitlist mortality while increasing the number of transplants. PMID:26031323

  16. Living donor kidney transplantation in the United States--looking back, looking forward.

    PubMed

    Levey, Andrew S; Danovitch, Gabriel; Hou, Susan

    2011-09-01

    There is a desperate need for kidney donors. Twenty-five years ago, we urged more widespread acceptance of unrelated living donors for kidney transplantation. Since then, 2 of us have donated a kidney to an unrelated recipient. In our view, the major challenges for living donor transplantation today are to improve access to this extraordinary gift of life and ensure its safety. Our perspective is that altruism is the motivation for most living kidney donors and the decision to donate represents a shared responsibility among the donor, the donor's physician, and the team of professionals at the transplant center. Thus, sound knowledge of the benefits and risks to donors and recipients is required for informed decisions, and all parties share in the responsibility for the outcomes after living kidney donation. We encourage our colleagues and agencies within the US Department of Health and Human Services to accept the responsibility to do their utmost to provide access to this life-enhancing procedure and systematically evaluate the safety of kidney donation as it evolves to meet the needs of more of our patients. PMID:21783290

  17. Becoming a Donor

    MedlinePlus

    ... by Organ and Gender. > U.S. Waiting List Candidate Data HOW TO BECOME A DONOR The most important thing to do is to sign up as an organ and tissue donor in your state's donor registry. To cover all bases, it's also helpful to: Designate your decision on ...

  18. Efficient Excited-State Symmetry Breaking in a Cationic Quadrupolar System Bearing Diphenylamino Donors.

    PubMed

    Carlotti, Benedetta; Benassi, Enrico; Fortuna, Cosimo G; Barone, Vincenzo; Spalletti, Anna; Elisei, Fausto

    2016-01-01

    We report a joint experimental and theoretical investigation of a quadrupolar D-π-A(+) -π-D system, the electron donors being diphenylamino groups and the electron acceptor being a methylpyridinium, in comparison with the dipolar D-π-A(+) system. The emission spectra of the two compounds overlap in all the investigated solvents. This finding could be rationalized by TD-DFT calculations: the LUMO-HOMO molecular orbitals involved in the emission transition are localized on the same branch of the quadrupolar structure that becomes the fluorescent portion, corresponding to that of the single-arm compound. Excited-state symmetry breaking has been rarely observed for quadrupolar systems showing negative solvatochromism and is here surprisingly revealed, even in low polarity solvents. Femtosecond transient absorption measurements revealed that an efficient photoinduced intramolecular charge transfer takes place in the quadrupolar chromophore, more efficient than in its dipolar analogue. This result is promising in view of the application of these compounds as novel two-photon absorbing materials. PMID:26510394

  19. Photon assisted tunneling in pairs of silicon donors

    NASA Astrophysics Data System (ADS)

    Litvinenko, K. L.; Pavlov, S. G.; Hübers, H.-W.; Abrosimov, N. V.; Pidgeon, C. R.; Murdin, B. N.

    2014-06-01

    Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons.

  20. Coexistence of impurity-induced quasi-one-dimensional electronic structure and topological surface states of Bi2Se3

    NASA Astrophysics Data System (ADS)

    Shokri, R.

    2016-02-01

    Using scanning tunneling spectroscopy (microscopy) (STS, STM) in combination with angle-resolved photoelectron spectroscopy (ARPES), we report on the coexistence of the topological surface state with a long range periodic modulation of the electronic structure on the surface of Bi2Se3 at room temperature. The electronic modulation manifests itself as a two-dimensional commensurate superlattice characterized by stripes running parallel to the surface lattice vectors when the near-surface region of samples are doped with trace amounts of iron or cesium. In both cases, the electronic signature is observed in STM only at energies within the valence band more than 130 meV blow the Dirac point energy (ED). ARPES experiments show the presence of intact Dirac cone, indicating that the electronic stripes do not influence the Dirac surface states. We suggest that the stripe states are the bulk properties of Bi2Se3 induced by trace amounts of cesium and iron impurities residing in bismuth and selenium substitutional sites and/or in the van-der-Waals gap.

  1. High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D- Charge State

    NASA Astrophysics Data System (ADS)

    Watson, T. F.; Weber, B.; House, M. G.; Büch, H.; Simmons, M. Y.

    2015-10-01

    We demonstrate high-fidelity electron spin read-out of a precision placed single donor in silicon via spin selective tunneling to either the D+ or D- charge state of the donor. By performing read-out at the stable two electron D0↔D- charge transition we can increase the tunnel rates to a nearby single electron transistor charge sensor by nearly 2 orders of magnitude, allowing faster qubit read-out (1 ms) with minimum loss in read-out fidelity (98.4%) compared to read-out at the D+↔D0 transition (99.6%). Furthermore, we show that read-out via the D- charge state can be used to rapidly initialize the electron spin qubit in its ground state with a fidelity of FI=99.8 %.

  2. Multi-state analysis illustrates treatment success after stem cell transplantation for acute myeloid leukemia followed by donor lymphocyte infusion.

    PubMed

    Eefting, Matthias; de Wreede, Liesbeth C; Halkes, Constantijn J M; von dem Borne, Peter A; Kersting, Sabina; Marijt, Erik W A; Veelken, Hendrik; Putter, Hein; Schetelig, Johannes; Falkenburg, J H Frederik

    2016-04-01

    In the field of hematopoietic stem cell transplantation, the common approach is to focus outcome analyses on time to relapse and death, without assessing the impact of post-transplant interventions. We investigated whether a multi-state model would give insight into the events after transplantation in a cohort of patients who were transplanted using a strategy including scheduled donor lymphocyte infusions. Seventy-eight consecutive patients who underwent myeloablative T-cell depleted allogeneic stem cell transplantation for acute myeloid leukemia or myelodysplastic syndrome were studied. We constructed a multi-state model to analyze the impact of donor lymphocyte infusion and graft-versus-host disease on the probabilities of relapse and non-relapse mortality over time. Based on this model we introduced a new measure for outcome after transplantation which we called 'treatment success': being alive without relapse and immunosuppression for graft-versus-host disease. All relevant clinical events were implemented into the multi-state model and were denoted treatment success or failure (either transient or permanent). Both relapse and non-relapse mortality were causes of failure of comparable magnitude. Whereas relapse was the dominant cause of failure from the transplantation state, its rate was reduced after graft-versus-host disease, and especially after donor lymphocyte infusion. The long-term probability of treatment success was approximately 40%. This probability was increased after donor lymphocyte infusion. Our multi-state model helps to interpret the impact of post-transplantation interventions and clinical events on failure and treatment success, thus extracting more information from observational data. PMID:26802054

  3. Quasiparticle interference from magnetic impurities

    NASA Astrophysics Data System (ADS)

    Derry, Philip G.; Mitchell, Andrew K.; Logan, David E.

    2015-07-01

    Fourier transform scanning tunneling spectroscopy (FT-STS) measures the scattering of conduction electrons from impurities and defects, giving information about the electronic structure of both the host material and adsorbed impurities. We interpret such FT-STS measurements in terms of the quasiparticle interference (QPI), here investigating in detail the QPI due to single magnetic impurities adsorbed on a range of representative nonmagnetic host surfaces, and contrasting with the case of a simple scalar impurity or point defect. We demonstrate how the electronic correlations present for magnetic impurities markedly affect the QPI, showing, e.g., a large intensity enhancement due to the Kondo effect, and universality at low temperatures/scanning energies. The commonly used joint density of states interpretation of FT-STS measurements is also considered, and shown to be insufficient in many cases, including that of magnetic impurities.

  4. A donor-acceptor triptycene-coumarin hybrid dye featuring a charge separated excited state and AIE properties.

    PubMed

    Qian, Rui; Tong, Hongjuan; Huang, Cui; Li, Junhao; Tang, Yun; Wang, Rui; Lou, Kaiyan; Wang, Wei

    2016-06-14

    A triptycene-coumarin hybrid dye DCT-1 with a 1,4-dimethoxybenzene group as the electron donor and a coumarin fluorophore as the acceptor on the separated fins of a triptycene was synthesized. DCT-1 features a charge separated excited state with emissions sensitive to solvent polarities. Moreover, DCT-1 also exhibits aggregation-induced emission properties in water with excellent photostability and pH-stability for potential cell imaging applications. PMID:27186970

  5. Ex Vivo Lung Perfusion – State of the Art in Lung Donor Pool Expansion

    PubMed Central

    Popov, Aron-Frederik; Sabashnikov, Anton; Patil, Nikhil P.; Zeriouh, Mohamed; Mohite, Prashant N.; Zych, Bartlomiej; Saez, Diana Garcia; Schmack, Bastian; Ruhparwar, Arjang; Dohmen, Pascal M.; Karck, Matthias; Simon, Andre R.; Weymann, Alexander

    2015-01-01

    Lung transplantation remains the gold standard for patients with end-stage lung disease. Nevertheless, the number of suitable donor lungs for the increasing number of patients on the waiting list necessitates alternative tools to expand the lung donor pool. Modern preservation and lung assessment techniques could contribute to improved function in previously rejected lungs. Ex vivo lung perfusion (EVLP) already demonstrated its value in identification of transplantable grafts from the higher risk donor pool. Moreover, lungs from EVLP did not show significantly different postoperative results compared to standard criteria lungs. This could be explained by the reduction of the ischemia-reperfusion injury through EVLP application. The aim of this article is to review technical characteristics and the growing clinical EVLP experience with special attention to EVLP application for donation after cardiac death (DCD) lungs. PMID:25644463

  6. Ex vivo lung perfusion - state of the art in lung donor pool expansion.

    PubMed

    Popov, Aron-Frederik; Sabashnikov, Anton; Patil, Nikhil P; Zeriouh, Mohamed; Mohite, Prashant N; Zych, Bartlomiej; Saez, Diana Garcia; Schmack, Bastian; Ruhparwar, Arjang; Dohmen, Pascal M; Karck, Matthias; Simon, Andre R; Weymann, Alexander

    2015-01-01

    Lung transplantation remains the gold standard for patients with end-stage lung disease. Nevertheless, the number of suitable donor lungs for the increasing number of patients on the waiting list necessitates alternative tools to expand the lung donor pool. Modern preservation and lung assessment techniques could contribute to improved function in previously rejected lungs. Ex vivo lung perfusion (EVLP) already demonstrated its value in identification of transplantable grafts from the higher risk donor pool. Moreover, lungs from EVLP did not show significantly different postoperative results compared to standard criteria lungs. This could be explained by the reduction of the ischemia-reperfusion injury through EVLP application. The aim of this article is to review technical characteristics and the growing clinical EVLP experience with special attention to EVLP application for donation after cardiac death (DCD) lungs. PMID:25644463

  7. Solid state and solution studies of lithium tris(n-butyl)magnesiates stabilised by Lewis donors.

    PubMed

    Zaragoza-Calero, Silvia; Francos, Javier; Kennedy, Alan R; O'Hara, Charles T

    2015-04-28

    Several Lewis base adducts of the synthetically important lithium tris(n-butyl)magnesiate LiMg((n)Bu)3 have been prepared and structurally characterised. The complexes were prepared by a co-complexation approach i.e., by combining the monometallic (n)BuLi and (n)Bu2Mg reagents in hydrocarbon solution before adding a molar equivalent of a donor molecule (a bidentate amine, tridentate amine or cyclic ether). The lithium magnesiates all adopt variants of the "Weiss motif" structure, i.e., contacted ion pair dimers with a linear arrangement and metals connected by butyl anions, where tetrahedral magnesium ions are in the central positions and the lithiums occupy the outer region, solvated by a neutral Lewis donor [(donor)Li(μ-(n)Bu)2Mg(μ-(n)Bu)2Mg(μ-(n)Bu)2Li(donor)]. When TMPDA, PMDETA or (R,R)-TMCDA [TMPDA = N,N,N'N'-tetramethylpropanediamine; PMDETA = N,N,N',N'',N''-pentamethyldiethylenetriamine; and (R,R)-TMCDA = (R,R)-N,N,N',N'-tetramethylcyclohexane-1,2-diamine], are employed, dimeric tetranuclear lithium magnesiates are produced. Due to the tridentate nature of the ligand, the PMDETA-containing structure (2) has an unusual 'open'-motif. When TMEDA (TMEDA = N,N,N',N'-tetramethylethylenediamine) is employed, a n-butoxide-containing complex [(TMEDA)Li(μ-(n)Bu)(μ-O(n)Bu)Mg2((n)Bu)2(μ-(n)Bu)(μ-O(n)Bu)Li(donor)] has been serendipitously prepared and adopts a ladder conformation which is commonly observed in lithium amide chemistry. This complex has also been prepared using a rational methodology. When 1,4-dioxane is employed, the donor stitches together a polymeric array of tetranuclear dimeric units (6). The hydrocarbon solution structures of the compounds have been characterised by (1)H, (7)Li, (13)C NMR spectroscopy; 2 has been studied by variable temperature and DOSY NMR. PMID:25791270

  8. The low-lying states and optical absorption properties of a hydrogenic impurity in a parabolic quantum dot modulation by applied electric field

    NASA Astrophysics Data System (ADS)

    Yuan, Jian-Hui; Zhang, Yan; Guo, Xinxia; Zhang, Jinjin; Mo, Hua

    2015-04-01

    Using the configuration-integration method, we investigated theoretically the low-lying states and optical absorption properties of a hydrogenic impurity in a parabolic quantum dot modulation by applied electric field. The low-lying states and optical absorption properties depend sensitively on the electric field F and the strength of the parabolic confinement ℏω0 . We discuss the linear and third-order nonlinear optical absorption coefficients of the dot (i) with the impurity ion and (ii) without the impurity ion. In the first case, the increase of the parabolic confinement ℏω0 (or the electric field F) can induce the blueshift (or redshift) of the peak of the absorption coefficient. Also the optical intensity can induce the increase of the third-order nonlinear optical absorption coefficients to weaken and even bleach the total optical absorption coefficients. Similar behavior has also been observed in the second case, but there is no redshift of the peak positions of the absorption coefficient with the increase of the electric field F. Compared with the second case, it is easily seen that there are the blueshifts of the peak of the absorption coefficients, which can be used as a technical means for detecting impurities.

  9. Chagas Disease Screening in Maternal Donors of Publicly Banked Umbilical Cord Blood, United States.

    PubMed

    Edwards, James M; Gilner, Jennifer B; Hernandez, Jose; Kurtzberg, Joanne; Heine, R Phillips

    2016-08-01

    To assess patterns of Chagas disease, we reviewed results of screening umbilical cord blood from a US public cord blood bank during 2007-2014. Nineteen maternal donors tested positive for Trypanosoma cruzi parasites (0.04%). Because perinatal transmission of Chagas disease is associated with substantial illness, targeted prenatal programs should screen for this disease. PMID:27433974

  10. Chagas Disease Screening in Maternal Donors of Publicly Banked Umbilical Cord Blood, United States

    PubMed Central

    Gilner, Jennifer B.; Hernandez, Jose; Kurtzberg, Joanne; Heine, R. Phillips

    2016-01-01

    To assess patterns of Chagas disease, we reviewed results of screening umbilical cord blood from a US public cord blood bank during 2007–2014. Nineteen maternal donors tested positive for Trypanosoma cruzi parasites (0.04%). Because perinatal transmission of Chagas disease is associated with substantial illness, targeted prenatal programs should screen for this disease. PMID:27433974

  11. Impurity gettering

    SciTech Connect

    Picraux, S.T.

    1995-06-01

    Transition metal impurities are well known to cause detrimental effects when present in the active regions of Si devices. Their presence degrades minority carrier lifetime, provides recombination-generation centers, increases junction leakage current and reduces gate oxide integrity. Thus, gettering processes are used to reduce the available metal impurities from the active region of microelectronic circuits. Gettering processes are usually divided into intrinsic (or internal) and extrinsic (or external) categories. Intrinsic refers to processing the Si wafer in a way to make available internal gettering sites, whereas extrinsic implies externally introduced gettering sites. Special concerns have been raised for intrinsic gettering. Not only will the formation of the precipitated oxide and denuded zone be difficult to achieve with the lower thermal budgets, but another inherent limit may set in. In this or any process which relies on the precipitation of metal silicides the impurity concentration can only be reduced as low as the solid solubility limit. However, the solubilities of transition metals relative to silicide formation are typically found to be {approx_gt}10{sup 12}/cm{sup 3} at temperatures of 800 C and above, and thus inadequate to getter to the needed concentration levels. It is thus anticipated that future microelectronic device processing will require one or more of the following advances in gettering technology: (1) new and more effective gettering mechanisms; (2) quantitative models of gettering to allow process optimization at low process thermal budgets and metal impurity concentrations, and/or (3) development of front side gettering methods to allow for more efficient gettering close to device regions. These trend-driven needs provide a driving force for qualitatively new approaches to gettering and provide possible new opportunities for the use of ion implantation in microelectronics processing.

  12. Electronic structure of copper, silver, and gold impurities in silicon

    SciTech Connect

    Fazzio, A.; Caldas, M.J.; Zunger, A.

    1985-07-15

    The electronic structure of Cu, Ag, and Au impurities in silicon is studied self-consistently using the quasiband crystal-field Green's-function method. We find that a substitutional model results in a two-level (acceptor and donor), three-charge-state (A/sup +/, A/sup 0/, and A/sup -/) system, which suggests that these defects are amphoteric. Our results show that these substitutional impurities form e-type and t/sub 2/-type crystal-field resonances (CFR) near the center of the valence band and a dangling-bond hybrid (DBH) t/sub 2/ level in the gap. The e/sup CFR/ and t/sub 2//sup CFR/ states are fully occupied and represent the perturbed and hybridized impurity atomic orbitals (not simply a ''d/sup 10/'' configuration). They are magnetically and electrically inactive but are predicted to be optically active in the uv, producing both impurity-bound core excitons as well as localized-to-itinerant

  13. Rich Donors, Poor Countries

    ERIC Educational Resources Information Center

    Thomas, M. A.

    2012-01-01

    The shifting ideological winds of foreign aid donors have driven their policy towards governments in poor countries. Donors supported state-led development policies in poor countries from the 1940s to the 1970s; market and private-sector driven reforms during the 1980s and 1990s; and returned their attention to the state with an emphasis on…

  14. Effect of Donor-Acceptor Coupling on TICT Dynamics in the Excited States of Two Dimethylamine Substituted Chalcones.

    PubMed

    Ghosh, Rajib; Palit, Dipak K

    2015-11-12

    Significant effect of coupling between the electron donor and acceptor groups in intramolecular charge transfer (ICT) dynamics has been demonstrated by comparing the photophysical properties of two isomeric N,N-dimethylaminochalcone derivatives (namely, DMAC-A and DMAC-B). In the case of the DMAC-B molecule, the distance between the donor (N,N-dimethylaniline or DMA) and the acceptor (carbonyl) groups is larger by one ethylene unit as compared to that in the case of DMAC-A. The excited singlet (S1) states of both the isomers have strong ICT character but their photophysical properties are remarkably different. In polar solvents, fluorescence quantum yields (and the lifetimes of the S1 state) of DMAC-A are more than 2 orders of magnitude lower (and shorter) than those of DMAC-B. Remarkable differences in the photophysical properties of these two isomers arise due to occurrence of the ultrafast twisting of the DMA group (or the TICT process) during the course of deactivation of the S1 state of the DMAC-A molecule, but not in the case of DMAC-B. In the later case, because of the presence of a large energy barrier along the twisting coordinate(s), TICT is not a feasible process, and hence, the S1 state of DMAC-B has the planar ICT structure. In the DMAC-A molecule, the strength of coupling between the donor and acceptor groups is relatively stronger because of a shorter distance between these groups. Femtosecond transient absorption spectroscopic measurements and DFT/TDDFT calculations have been adopted to establish the above aspects of the relaxation dynamics of the S1 states of these two isomeric chalcones. PMID:26480238

  15. Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

    SciTech Connect

    Wang, Junjie; Feng, Simin; Rhodes, Daniel; Balicas, Luis; Nguyen, Minh An T.; Watanabe, K.; Taniguchi, T.; Mallouk, Thomas E.; Terrones, Mauricio; Zhu, J.

    2015-04-13

    Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

  16. ICU Management of the Potential Organ Donor: State of the Art.

    PubMed

    Maciel, Carolina B; Greer, David M

    2016-09-01

    End-organ failure is associated with high mortality and morbidity, in addition to increased health care costs. Organ transplantation is the only definitive treatment that can improve survival and quality of life in such patients; however, due to the persistent mismatch between organ supply and demand, waiting lists continue to grow across the world. Careful intensive care management of the potential organ donor with goal-directed therapy has the potential to optimize organ function and improve donation yield. PMID:27498101

  17. The electronic structure of the Mott insulator VO2: the strongly correlated metal state is screened by impurity band

    NASA Astrophysics Data System (ADS)

    Kim, Hyun-Tak

    A Mott insulator VO2 (3d1) has a direct gap (Δdirect ~Vdirect) of 0.6 eV and an indirect gap of Δact ~Vdirect ~ 0.15 eV coming from impurity indirect band. At Tc, Δdirect =Δact = O is satisfied and the insulator-to-metal transition (IMT) occurs. The metallic carriers near core region can be trapped when a critical onsite Coulomb Uc exists. Then, a potential energy is defined as Vg =Vdirect +Uc +Vindirect = - (2 2 3) EF (1 + e (NtotNtotntot) (1 - exp (-Δact-ΔactkB T))) +Uc kB T))) +Uc ntot) (1 - exp (-Δact-ΔactkB T))) +Uc kB T))) +Uc 3) EF (1 + e (NtotNtotntot) (1 - exp (-Δact-ΔactkB T))) +Uc kB T))) +Uc ntot) (1 - exp (-Δact-ΔactkB T))) +Uc kB T))) +Uc , where Vdirect = - (2 2 3 3) EF is the screened Coulomb pseudopotential at K = 0. Δρ =NtotNtotntot ~ 0 . 018 % ntot ~ 0 . 018 % [1] is defined as the critical doping quantity, where ntot is the carrier density in the direct band and Ntot is the carrier density in the impurity band. In Uc < (2

  18. Practice patterns for evaluation, consent, and care of related donors and recipients at hematopoietic cell transplantation centers in the United States

    PubMed Central

    Pedersen, Tanya L.; Confer, Dennis L.; Rizzo, J. Douglas; Pulsipher, Michael A.; Stroncek, David; Leitman, Susan; Anderlini, Paolo

    2010-01-01

    Conflict of interest may arise when 1 physician serves 2 persons whose medical care is interdependent. In hematopoietic cell transplantation (HCT) from unrelated donors and in the setting of solid organ transplantation from living donors, the standard of care is for donors and recipients to be managed by separate physicians to provide unbiased care. However, the practice patterns of evaluation and care of related donors and recipients are not well described. A survey of HCT centers in the United States was conducted by the Donor Health and Safety Working Committee of the Center for International Blood and Marrow Transplant Research to determine the type of provider involved in medical clearance, informed consent, and medical management of hematopoietic cell collection and the relationship of that provider to the HC transplant recipient. The response rate was 40%. In greater than 70% of centers, transplantation physicians were involved or potentially involved in overlapping care of the HC transplant donor and the recipient. These patterns were similar between transplantation teams caring for adult or pediatric donors and recipients. Among responding centers, medical management of recipients and their related donors by the same provider is common, a practice that has the potential for conflict of interest. PMID:20228276

  19. Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states

    SciTech Connect

    Goyal, Nitin; Fjeldly, Tor A.

    2014-07-14

    In this paper, a physics based analytical model is presented for calculation of the two-dimensional electron gas density and the bare surface barrier height of AlGaN/AlN/GaN material stacks. The presented model is based on the concept of distributed surface donor states and the self-consistent solution of Poisson equation at the different material interfaces. The model shows good agreement with the reported experimental data and can be used for the design and characterization of advanced GaN devices for power and radio frequency applications.

  20. Computer Simulation of Stress-Strain State of Pipeline Section Affected by Abrasion Due to Mechanical Impurities

    NASA Astrophysics Data System (ADS)

    Burkov, P. V.; Afanas’ev, R. G.; Burkova, S. P.

    2016-04-01

    The paper presents the effect of abrasive wear of the pipeline section occurred due to mechanical impurities in the transported gas flow. The approaches to the detection of the maximum specific wear of the pipeline wall and the geometry of abrasion are the main problems of computer simulation described in this paper.

  1. Patients on state organ donor registries receive similar levels of intensive care compared to those who are not: an opportunity to increase public intent to donate.

    PubMed

    Patel, Madhukar S; Raza, Shariq S; Bhakta, Akash; Ewing, Tyler; Bukur, Marko; Vagefi, Parsia A; Salim, Ali; Malinoski, Darren J

    2016-06-01

    The intent to donate organs is affected by the public perception that patients on state registries receive less aggressive life-saving care in order to allow organ donation to proceed. However, the association between first person authorization to donate organs and the actual care received by eventual organ donors in hospitals is unknown. From August 2010 to April 2011, all eight organ procurement organizations in United Network for Organ Sharing Region 5 prospectively recorded demographic data and organ utilization rates on all donors after neurologic determination of death (DNDDs). Critical care and physiologic parameters were also recorded at referral for imminent neurologic death and prior to authorization for donation to reflect the aggressiveness of provided care. There were 586 DNDDs and 23% were on a state registry. Compared to non-registered DNDDs, those on state registries were older but were noted to have similar critical care parameters at both referral and authorization. Furthermore, there was no significant difference in organs procured per donor or organs transplanted per donor between registered and non-registered DNDDs. Thus, DNDDs who are on state donor registries receive similar levels of intensive care compared to non-registered donors. The association noted in this study may therefore help to dispel a common misperception that decreases the intent to donate. PMID:26992655

  2. Mobile impurities in ferromagnetic liquids

    NASA Astrophysics Data System (ADS)

    Kantian, Adrian; Schollwoeck, Ulrich; Giamarchi, Thierry

    2011-03-01

    Recent work has shown that mobile impurities in one dimensional interacting systems may exhibit behaviour that differs strongly from that predicted by standard Tomonaga-Luttinger liquid theory, with the appearance of power-law divergences in the spectral function signifying sublinear diffusion of the impurity. Using time-dependent matrix product states, we investigate a range of cases of mobile impurities in systems beyond the analytically accessible examples to assess the existence of a new universality class of low-energy physics in one-dimensional systems. Correspondence: Adrian.Kantian@unige.ch This work was supported in part by the Swiss SNF under MaNEP and division II.

  3. A design strategy for intramolecular singlet fission mediated by charge-transfer states in donor-acceptor organic materials

    NASA Astrophysics Data System (ADS)

    Busby, Erik; Xia, Jianlong; Wu, Qin; Low, Jonathan Z.; Song, Rui; Miller, John R.; Zhu, X.-Y.; Campos, Luis M.; Sfeir, Matthew Y.

    2015-04-01

    The ability to advance our understanding of multiple exciton generation (MEG) in organic materials has been restricted by the limited number of materials capable of singlet fission. A particular challenge is the development of materials that undergo efficient intramolecular fission, such that local order and strong nearest-neighbour coupling is no longer a design constraint. Here we address these challenges by demonstrating that strong intrachain donor-acceptor interactions are a key design feature for organic materials capable of intramolecular singlet fission. By conjugating strong-acceptor and strong-donor building blocks, small molecules and polymers with charge-transfer states that mediate population transfer between singlet excitons and triplet excitons are synthesized. Using transient optical techniques, we show that triplet populations can be generated with yields up to 170%. These guidelines are widely applicable to similar families of polymers and small molecules, and can lead to the development of new fission-capable materials with tunable electronic structure, as well as a deeper fundamental understanding of MEG.

  4. A design strategy for intramolecular singlet fission mediated by charge-transfer states in donor-acceptor organic materials.

    PubMed

    Busby, Erik; Xia, Jianlong; Wu, Qin; Low, Jonathan Z; Song, Rui; Miller, John R; Zhu, X-Y; Campos, Luis M; Sfeir, Matthew Y

    2015-04-01

    The ability to advance our understanding of multiple exciton generation (MEG) in organic materials has been restricted by the limited number of materials capable of singlet fission. A particular challenge is the development of materials that undergo efficient intramolecular fission, such that local order and strong nearest-neighbour coupling is no longer a design constraint. Here we address these challenges by demonstrating that strong intrachain donor-acceptor interactions are a key design feature for organic materials capable of intramolecular singlet fission. By conjugating strong-acceptor and strong-donor building blocks, small molecules and polymers with charge-transfer states that mediate population transfer between singlet excitons and triplet excitons are synthesized. Using transient optical techniques, we show that triplet populations can be generated with yields up to 170%. These guidelines are widely applicable to similar families of polymers and small molecules, and can lead to the development of new fission-capable materials with tunable electronic structure, as well as a deeper fundamental understanding of MEG. PMID:25581625

  5. Why Minority Donors Are Needed

    MedlinePlus

    ... Español Search Register with your state as an Organ Donor Home Why Donate Becoming a Donor About Donation & ... Why Donate RELATED INFORMATION Minority Focused Grantee Publications Organ Donation Process Enrolling as a Donor Trying to Save a Life Testing for Brain ...

  6. EPR study of the ground state of Mn2+ impurity ions in alumoborates MAl3(BO3)4 (M = Y, Eu, Tm)

    NASA Astrophysics Data System (ADS)

    Prokhorov, А А; Prokhorov, A. D.; Chernush, L. F.; Dyakonov, V. P.; Szymczak, H.; Dejneka, A.

    2015-06-01

    New data about the ground state of the Mn2+ impurity ions in a series of single crystals of alumbrados MAl3(BO3)4, where M = Y,Eu,Tm were obtained. The electron paramagnetic resonance (EPR) spectra of the Mn2+ spectra were studied, the parameters of the spin Hamiltonian describing the angular dependence of the spectrum were defined. It was shown that Mn2+ ions substitute trivalent ions of rare earth metals without changing the symmetry of the substitution site. The charge compensation process was found to be a nonlocal one. The cooling of the crystals leads to the increase of the splitting of the ground state, which is associated with the anisotropy of the thermal expansion coefficient. It was shown that an application of the superposition model to explain the distortions induced by an impurity Mn2+ ion has some limitations. The EPR linewidth of the Mn2+ ion in the TmAl3(BO3)4 crystal increases with increasing temperature as a result of the dipole-dipole and exchange interactions with the excited states of the host lattice Tm3+ ion.

  7. Model potential calculation of the thermal donor energy spectrum in silicon

    NASA Astrophysics Data System (ADS)

    Chen, C. S.; Schroder, D. K.

    1988-06-01

    The two-parameter model potential originally proposed by Ning and Sah [Phys. Rev. B 4, 3468 (1971)] for calculating the ground-state energies of group V and group VI impurities in silicon is extended to the variational calculation of the thermal donor ionization energies. In the multivalley effective mass approximation, the theoretical results are in excellent agreement with the reported experimental data. This provides additional evidence for the assumption that thermal donors consist of five to thirteen oxygen atoms, as first proposed by Ourmazd, Schröter, and Bourret [J. Appl. Phys. 56, 1670 (1984)].

  8. Model potential calculation of the thermal donor energy spectrum in silicon

    SciTech Connect

    Chen, C.S.; Schroder, D.K.

    1988-06-15

    The two-parameter model potential originally proposed by Ning and Sah (Phys. Rev. B 4, 3468 (1971)) for calculating the ground-state energies of group V and group VI impurities in silicon is extended to the variational calculation of the thermal donor ionization energies. In the multivalley effective mass approximation, the theoretical results are in excellent agreement with the reported experimental data. This provides additional evidence for the assumption that thermal donors consist of five to thirteen oxygen atoms, as first proposed by Ourmazd, Schroeter, and Bourret (J. Appl. Phys. 56, 1670 (1984)).

  9. Critical Factors Associated With Missing Follow-Up Data for Living Kidney Donors in the United States.

    PubMed

    Schold, J D; Buccini, L D; Rodrigue, J R; Mandelbrot, D; Goldfarb, D A; Flechner, S M; Kayler, L K; Poggio, E D

    2015-09-01

    Follow-up care for living kidney donors is an important responsibility of the transplant community. Prior reports indicate incomplete donor follow-up information, which may reflect both donor and transplant center factors. New UNOS regulations require reporting of donor follow-up information by centers for 2 years. We utilized national SRTR data to evaluate donor and center-level factors associated with completed follow-up for donors 2008-2012 (n = 30 026) using multivariable hierarchical logistic models. We compared center follow-up compliance based on current UNOS standards using adjusted and unadjusted models. Complete follow-up at 6, 12, and 24 months was 67%, 60%, and 50% for clinical and 51%, 40%, and 30% for laboratory data, respectively, but have improved over time. Donor risk factors for missing laboratory data included younger age 18-34 (adjusted odds ratio [AOR] = 2.03, 1.58-2.60), black race (AOR = 1.17, 1.05-1.30), lack of insurance (AOR = 1.25, 1.15-1.36), lower educational attainment (AOR = 1.19, 1.06-1.34), >500 miles to center (AOR = 1.78, 1.60-1.98), and centers performing >40 living donor transplants/year (AOR = 2.20, 1.21-3.98). Risk-adjustment moderately shifted classification of center compliance with UNOS standards. There is substantial missing donor follow-up with marked variation by donor characteristics and centers. Although follow-up has improved over time, targeted efforts are needed for donors with selected characteristics and at centers with higher living donor volume. Adding adjustment for donor factors to policies regulating follow-up may function to provide more balanced evaluation of center efforts. PMID:25902877

  10. Synthesis and investigation of intra-molecular charge transfer state properties of novel donor-acceptor-donor pyridine derivatives: the effects of temperature and environment on molecular configurations and the origin of delayed fluorescence.

    PubMed

    Aydemir, Murat; Haykır, Gülçin; Türksoy, Figen; Gümüş, Selçuk; Dias, Fernando B; Monkman, Andy P

    2015-10-14

    A novel series of donor-acceptor-donor (D-A-D) structured pyridine derivatives were synthesised and detailed photo-physical investigations were made using mainly steady-state and time-resolved spectroscopy techniques at varying temperatures. The investigations showed that the molecules have solvent polarity and temperature dependent excited-state configurations, confirmed in two different polarity solvents (295-90 K), i.e. methyl cyclohexane (MCH) and 2-methyltetrahdrofurane (2-MeTHF). In MCH, the investigations revealed dual fluorescence over the temperature range of 295-90 K. At 295 K, the ground-state configuration of the molecules has a partially twisted geometry as determined by DFT calculation, yet the emission originates totally from a locally excited (LE) state, however once the temperature is lowered to 90 K, the twisted molecular configuration is stabilised, and the emission originates from a fully-relaxed intramolecular charge transfer state (ICT), this is contrary to the systems where structural reorganisation stabilises ICT and this is frozen out at low temperatures. The DFT calculations revealed different ground state molecular configurations due to the presence of different electron-donating groups, e.g. the molecule including anthracene groups has a near 90° twisted geometry whereas the triphenylamine including molecule has a pyramidal geometrical folding, therefore, the decrease in temperature restricts the donor degree of rotational freedom. In 2-MeTHF solution, the fluorescence spectrum of both molecules is always of ICT character, but gradually red-shifts through the fluid to glass transition temperature (∼135 K), in this case, the fluorescence occurs after structural and solvent-shell relaxations, however, upon cooling below 135 K, the spectra dramatically shift back to blue giving rise to strong emission from an ICT excited-state (but not the LE state) where the molecules have unrelaxed geometries. This significant change in the nature of

  11. Evidence of Delocalization in Charge-Transfer State Manifold for Donor:Acceptor Organic Photovoltaics.

    PubMed

    Guan, Zhiqiang; Li, Ho-Wa; Zhang, Jinfeng; Cheng, Yuanhang; Yang, Qingdan; Lo, Ming-Fai; Ng, Tsz-Wai; Tsang, Sai-Wing; Lee, Chun-Sing

    2016-08-24

    How charge-transfer states (CTSs) assist charge separation of a Coulombically bound exciton in organic photovoltaics has been a hot topic. It is believed that the delocalization feature of a CTS plays a crucial role in the charge separation process. However, the delocalization of the "hot" and the "relaxed" CTSs is still under debate. Here, with a novel frequency dependent charge-modulated electroabsorption spectroscopy (CMEAS) technique, we elucidate clearly that both "hot" and "relaxed" CTSs are loosely bound and delocalized states. This is confirmed by comparing the CMEAS results of CTSs with those of localized polaron states. Our results reveal the role of CTS delocalization on charge separation and indicate that no substantial delocalization gradient exists in CTSs. PMID:27482867

  12. Response to "Methyl donors change the germline epigenetic state of the A(vy) allele"

    Technology Transfer Automated Retrieval System (TEKTRAN)

    We appreciate the explanation offered by Cropley et al. for what they perceive is a discrepancy between their results showing an effect of methyl supplementation on the germline epigenetic state of Avy and ours showing that diet-induced hypermethylation at Avy is not inherited transgenerationally. D...

  13. Electron-Donor-Acceptor (EDA) Complexes Of Aromatic Hydrocarbons With Organic Acceptors In Solution And In The Solid State. A Quantitative FT-IR Investigation.

    NASA Astrophysics Data System (ADS)

    Bruni, Paolo; Giorgini, Elisabetta; Tosi, Giorgio; Zampini, Angela

    1989-12-01

    Liquid phase FT-IR investigation on π-π Electron-Donor-Acceptor (EDA) complexes between arenes and organic acceptors leads to values of formation constants that are in good agreement with the ones from other techniques (UV-Vis and NMR). In addition solid state FT-IR and UV-Vis determinations on the complexes are also reported and discussed.

  14. Interaction-induced localization of mobile impurities in ultracold systems

    PubMed Central

    Li, Jian; An, Jin; Ting, C. S.

    2013-01-01

    The impurities, introduced intentionally or accidentally into certain materials, can significantly modify their characteristics or reveal their intrinsic physical properties, and thus play an important role in solid-state physics. Different from those static impurities in a solid, the impurities realized in cold atomic systems are naturally mobile. Here we propose an effective theory for treating some unique behaviors exhibited by ultracold mobile impurities. Our theory reveals the interaction-induced transition between the extended and localized impurity states, and also explains the essential features obtained from several previous models in a unified way. Based on our theory, we predict many intriguing phenomena in ultracold systems associated with the extended and localized impurities, including the formation of the impurity-molecules and impurity-lattices. We hope this investigation can open up a new avenue for the future studies on ultracold mobile impurities. PMID:24192986

  15. Interaction-induced localization of mobile impurities in ultracold systems

    NASA Astrophysics Data System (ADS)

    Li, Jian; An, Jin; Ting, C. S.

    2013-11-01

    The impurities, introduced intentionally or accidentally into certain materials, can significantly modify their characteristics or reveal their intrinsic physical properties, and thus play an important role in solid-state physics. Different from those static impurities in a solid, the impurities realized in cold atomic systems are naturally mobile. Here we propose an effective theory for treating some unique behaviors exhibited by ultracold mobile impurities. Our theory reveals the interaction-induced transition between the extended and localized impurity states, and also explains the essential features obtained from several previous models in a unified way. Based on our theory, we predict many intriguing phenomena in ultracold systems associated with the extended and localized impurities, including the formation of the impurity-molecules and impurity-lattices. We hope this investigation can open up a new avenue for the future studies on ultracold mobile impurities.

  16. Identification of rhenium donors and sulfur vacancy acceptors in layered MoS2 bulk samples

    NASA Astrophysics Data System (ADS)

    Brandão, F. D.; Ribeiro, G. M.; Vaz, P. H.; González, J. C.; Krambrock, K.

    2016-06-01

    MoS2 monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS2 shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS2 monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS2 with a corresponding donor concentration of about 108-12 defects/cm2 for MoS2 monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 1015 cm-3, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 1019 cm-3 and net acceptor concentration of 5 × 1018 cm-3 related to sulfur vacancies.

  17. Blinking fluorescence of single donor-acceptor pairs: Important role of ``dark'' states in resonance energy transfer via singlet levels

    NASA Astrophysics Data System (ADS)

    Osad'ko, I. S.; Shchukina, A. L.

    2012-06-01

    The influence of triplet levels on Förster resonance energy transfer via singlet levels in donor-acceptor (D-A) pairs is studied. Four types of D-A pair are considered: (i) two-level donor and two-level acceptor, (ii) three-level donor and two-level acceptor, (iii) two-level donor and three-level acceptor, and (iv) three-level donor and three-level acceptor. If singlet-triplet transitions in a three-level acceptor molecule are ineffective, the energy transfer efficiency E=IA/(IA+ID), where ID and IA are the average intensities of donor and acceptor fluorescence, can be described by the simple theoretical equation E(F)=FTD/(1+FTD). Here F is the rate of energy transfer, and TD is the donor fluorescence lifetime. In accordance with the last equation, 100% of the donor electronic energy can be transferred to an acceptor molecule at FTD≫1. However, if singlet-triplet transitions in a three-level acceptor molecule are effective, the energy transfer efficiency is described by another theoretical equation, E(F)=F¯(F)TD/[1+F¯(F)TD]. Here F¯(F) is a function of F depending on singlet-triplet transitions in both donor and acceptor molecules. Expressions for the functions F¯(F) are derived. In this case the energy transfer efficiency will be far from 100% even at FTD≫1. The character of the intensity fluctuations of donor and acceptor fluorescence indicates which of the two equations for E(F) should be used to find the value of the rate F. Therefore, random time instants of photon emission in both donor and acceptor fluorescence are calculated by the Monte Carlo method for all four types of D-A pair. Theoretical expressions for start-stop correlators (waiting time distributions) in donor and acceptor fluorescence are derived. The probabilities wND(t) and wNA(t) of finding N photons of donor and acceptor fluorescence in the time interval t are calculated for various values of the energy transfer rate F and for all four types of D-A pair. Comparison of the calculated D

  18. Prevalence of Antibodies to Hepatitis E Virus in Veterinarians Working with Swine and in Normal Blood Donors in the United States and Other Countries

    PubMed Central

    Meng, X. J.; Wiseman, B.; Elvinger, F.; Guenette, D. K.; Toth, T. E.; Engle, R. E.; Emerson, S. U.; Purcell, R. H.

    2002-01-01

    Hepatitis E virus (HEV) is endemic in many developing and some industrialized countries. It has been hypothesized that animals may be the source of infection. The recent identification of swine HEV in U.S. pigs and the demonstration of its ability to infect across species have lent credence to this hypothesis. To assess the potential risk of zoonotic HEV infection, we tested a total of 468 veterinarians working with swine (including 389 U.S. swine veterinarians) and 400 normal U.S. blood donors for immunoglobulin G anti-HEV. Recombinant capsid antigens from a U.S. strain of swine HEV and from a human HEV strain (Sar-55) were each used in an enzyme-linked immunosorbent assay. The anti-HEV prevalence assayed with the swine HEV antigen showed 97% concordance with that obtained with the human HEV antigen (κ = 92%). Among the 295 swine veterinarians tested from the eight U.S. states (Minnesota, Indiana, Nebraska, Iowa, Illinois, Missouri, North Carolina, and Alabama) from which normal blood donor samples were available, 26% were positive with Sar-55 antigen and 23% were positive with swine HEV antigen. In contrast, 18% of the blood donors from the same eight U.S. states were positive with Sar-55 antigen and 17% were positive with swine HEV antigen. Swine veterinarians in the eight states were 1.51 times more likely when tested with swine HEV antigen (95% confidence interval, 1.03 to 2.20) and 1.46 times more likely when tested with Sar-55 antigen (95% confidence interval, 0.99 to 2.17) to be anti-HEV positive than normal blood donors. We did not find a difference in anti-HEV prevalence between veterinarians who reported having had a needle stick or cut and those who had not or between those who spent more time (≥80% of the time) and those who spent less time (≤20% of the time) working with pigs. Similarly, we did not find a difference in anti-HEV prevalence according to four job categories (academic, practicing, student, and industry veterinarians). There was a

  19. Ab initio calculation of hyperfine and superhyperfine interactions for shallow donors in semiconductors.

    PubMed

    Overhof, Harald; Gerstmann, Uwe

    2004-02-27

    For the shallow group V donors in Si we show that the hyperfine interaction for the donor nucleus and the superhyperfine interactions for the first five shells of Si ligands can be quite accurately calculated using the local spin-density approximation of the density-functional theory. We treat the impurity problem in a Green's function approach. Since we have to truncate the long-ranged part of the defect potential, we do not obtain a localized gap state. Instead we identify the resonance above the conduction band with the paramagnetic defect state. We show that the hf and shf interactions thus obtained are at least as accurate as those obtained from one-electron theories with fitting parameters. Application of this first principles method to other shallow donors could be an essential help in defect identification. PMID:14995814

  20. Donor defects and small polarons on the TiO2(110) surface

    NASA Astrophysics Data System (ADS)

    Moses, P. G.; Janotti, A.; Franchini, C.; Kresse, G.; Van de Walle, C. G.

    2016-05-01

    The role of defects in the chemical activity of the rutile TiO2(110) surface remains a rich topic of research, despite the rutile (110) being one of the most studied surfaces of transition-metal oxides. Here, we present results from hybrid functional calculations that reconcile apparently disparate views on the impact of donor defects, such as oxygen vacancies and hydrogen impurities, on the electronic structure of the (110) rutile surface. We find that the bridging oxygen vacancy and adsorbed or substitutional hydrogen are actually shallow donors, which do not induce gap states. The excess electrons from these donor centers tend to localize in the form of small polarons, which are the factual cause of the deep states ˜1 eV below the conduction band, often observed in photoelectron spectroscopy measurements. Our results offer a new framework for understanding the surface electronic structure of TiO2 and related oxides.

  1. Valency configuration of transition metal impurities in ZnO

    SciTech Connect

    Petit, Leon; Schulthess, Thomas C; Svane, Axel; Temmerman, Walter M; Szotek, Zdzislawa; Janotti, Anderson

    2006-01-01

    We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM=Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn{sub 1-x}TM{sub x}O, the localized TM{sup 2+} configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy {epsilon}F close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with {epsilon}F close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

  2. Valley spin-orbit interaction for the triplet and doublet 1sground states of lithium donor center in monoisotopic {sup 28}Si

    SciTech Connect

    Ezhevskii, Alexander A.; Popkov, Sergey A.; Soukhorukov, Andrey V.; Guseinov, Davud V.; Konakov, Anton A.; Abrosimov, Nikolai V.; Riemann, Helge

    2013-12-04

    Valley spin-orbit interaction for the triplet and doublet 1s-ground states of lithium donor center in monoisotopic {sup 28}Si was studied in order to determine its contribution to the electron spin relaxation rate. We observed new electron paramagnetic resonance spectra of lithium in monoisotopic silicon with g<2.000 and found the spin Hamiltonian parameters for it. Using our experimental results and taking into account spin-orbit coupling between the triplet states and the triplet and doublet states we found that the lithium donor electron spectrum and g-factors for its states strongly depend on both the internal strains in the crystal and the intervalley spin-orbit interactions.

  3. Enhanced ionized impurity scattering in nanowires

    NASA Astrophysics Data System (ADS)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  4. Endohedral Impurities in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis

    2003-03-01

    A generalization of the Anderson model that includes pseudo-Jahn-Teller impurity coupling is proposed to describe distortions of an endohedral impurity in a carbon nanotube. Treating the distortion within mean-field theory, spontaneous axial symmetry breaking is found when the vibronic coupling strength g exceeds a critical value g_c. The effective potential in the symmetry-broken state is found to have O(2) symmetry, in agreement with numerical calculations. The consequences of such a distortion on electronic transport will be discussed.

  5. Impurity bubbles in a BEC

    NASA Astrophysics Data System (ADS)

    Timmermans, Eddy; Blinova, Alina; Boshier, Malcolm

    2013-05-01

    Polarons (particles that interact with the self-consistent deformation of the host medium that contains them) self-localize when strongly coupled. Dilute Bose-Einstein condensates (BECs) doped with neutral distinguishable atoms (impurities) and armed with a Feshbach-tuned impurity-boson interaction provide a unique laboratory to study self-localized polarons. In nature, self-localized polarons come in two flavors that exhibit qualitatively different behavior: In lattice systems, the deformation is slight and the particle is accompanied by a cloud of collective excitations as in the case of the Landau-Pekar polarons of electrons in a dielectric lattice. In natural fluids and gases, the strongly coupled particle radically alters the medium, e.g. by expelling the host medium as in the case of the electron bubbles in superfluid helium. We show that BEC-impurities can self-localize in a bubble, as well as in a Landau-Pekar polaron state. The BEC-impurity system is fully characterized by only two dimensionless coupling constants. In the corresponding phase diagram the bubble and Landau-Pekar polaron limits correspond to large islands separated by a cross-over region. The same BEC-impurity species can be adiabatically Feshbach steered from the Landau-Pekar to the bubble regime. This work was funded by the Los Alamos LDRD program.

  6. Analytical advances in pharmaceutical impurity profiling.

    PubMed

    Holm, René; Elder, David P

    2016-05-25

    Impurities will be present in all drug substances and drug products, i.e. nothing is 100% pure if one looks in enough depth. The current regulatory guidance on impurities accepts this, and for drug products with a dose of less than 2g/day identification of impurities is set at 0.1% levels and above (ICH Q3B(R2), 2006). For some impurities, this is a simple undertaking as generally available analytical techniques can address the prevailing analytical challenges; whereas, for others this may be much more challenging requiring more sophisticated analytical approaches. The present review provides an insight into current development of analytical techniques to investigate and quantify impurities in drug substances and drug products providing discussion of progress particular within the field of chromatography to ensure separation of and quantification of those related impurities. Further, a section is devoted to the identification of classical impurities, but in addition, inorganic (metal residues) and solid state impurities are also discussed. Risk control strategies for pharmaceutical impurities aligned with several of the ICH guidelines, are also discussed. PMID:26690047

  7. Impurity centers of tin in glassy arsenic chalcogenides

    SciTech Connect

    Bordovsky, G. A.; Dashina, A. Yu.; Marchenko, A. V.; Seregin, P. P.; Terukov, E. I.

    2011-06-15

    {sup 119}Sn atoms produced by radioactive decay of {sup 119}Sb impurity atoms in the structure of As{sub x}S{sub 1-x} and As{sub x}Se{sub 1-x} glasses are stabilized in the form of Sn{sup 2+} and Sn{sup 4+} ions at arsenic sites and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn{sup 2+} is an ionized acceptor, and Sn{sup 4+} is an ionized donor), whereas the neutral state of the Sn{sup 3+} center is unstable. The fraction of Sn{sup 4+} states increases with chalcogen content in glass. {sup 119}Sn atoms produced by radioactive decay of {sup 119m}Te impurity atoms in the structure of As{sub x}S{sub 1-x} and As{sub x}Se{sub 1-x} glasses are stabilized at chalcogen sites (they are electrically inactive) and arsenic sites, and the fraction of arsenic atoms decreases with the chalcogen content in glass.

  8. Live-donor nephrectomy.

    PubMed

    Rocca, Juan P; Davis, Eric; Edye, Michael

    2012-01-01

    Six decades after its first implementation, kidney transplantation remains the optimal therapy for end-stage renal disease requiring dialysis. Despite the incontrovertible mortality reduction and cost-effectiveness of kidney transplantation, the greatest remaining barrier to treatment of end-stage renal disease is organ availability. Although the waiting list of patients who stand to benefit from kidney transplantation grows at a rate proportional to the overall population and proliferation of diabetes and hypertension, the pool of deceased-donor organs available for transplantation experiences minimal to no growth. Because the kidney is uniquely suited as a paired organ, the transplant community's answer to this shortage is living donation of a healthy volunteer's kidney to a recipient with end-stage renal disease. This review details the history and evolution of living-donor kidney transplantation in the United States as well as advances the next decade promises. Laparoscopic donor nephrectomy has overcome many of the obstacles to living donation in terms of donor morbidity and volunteerism. Known donor risks in terms of surgical and medical morbidity are reviewed, as well as the ongoing efforts to delineate and mitigate donor risk in the context of accumulating recipient morbidity while on the waiting list. PMID:22678857

  9. Single impurity in ultracold Fermi superfluids

    SciTech Connect

    Jiang Lei; Baksmaty, Leslie O.; Pu, Han; Hu Hui; Chen Yan

    2011-06-15

    The role of impurities as experimental probes in the detection of quantum material properties is well appreciated. Here we study the effect of a single classical magnetic impurity in trapped ultracold Fermi superfluids. Depending on its shape and strength, a magnetic impurity can induce single or multiple midgap bound states in a superfluid Fermi gas. The multiple midgap states could coincide with the development of a Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) phase within the superfluid. As an analog of the scanning tunneling microsope, we propose a modified rf spectroscopic method to measure the local density of states which can be employed to detect these states and other quantum phases of cold atoms. A key result of our self-consistent Bogoliubov-de Gennes calculations is that a magnetic impurity can controllably induce an FFLO state at currently accessible experimental parameters.

  10. Effects of impurity size and heavy doping on energy-band-structure parameters of various impurity-Si systems

    NASA Astrophysics Data System (ADS)

    Van Cong, H.

    2016-04-01

    The effects of impurity size and heavy doping on energy-band-structure parameters of various donor (or acceptor)-Si systems were investigated. A satisfactory description was obtained for intrinsic properties such as: the effective dielectric constant, effective impurity ionization energy, effective intrinsic band gap, being doping-independent, and critical impurity density, Ncn(cp) GMM, which is derived from our simple generalized Mott model (GMM), as well as for extrinsic properties such as: the Fermi energy, reduced band gap, optical band gap, being doping-dependent, and critical impurity density, Ncn(cp) SSS, which is determined by our complicated spin-susceptibility-singularity (SSS) method. That gives: Ncn(cp) SSS ≡ Ncn(cp) GMM for all the studied donor (or acceptor)-Si systems.

  11. Detection of 549 new HLA alleles in potential stem cell donors from the United States, Poland and Germany.

    PubMed

    Hernández-Frederick, C J; Cereb, N; Giani, A S; Ruppel, J; Maraszek, A; Pingel, J; Sauter, J; Schmidt, A H; Yang, S Y

    2016-01-01

    We characterized 549 new human leukocyte antigen (HLA) class I and class II alleles found in newly registered stem cell donors as a result of high-throughput HLA typing. New alleles include 101 HLA-A, 132 HLA-B, 105 HLA-C, 2 HLA-DRB1, 89 HLA-DQB1 and 120 HLA-DPB1 alleles. Mainly, new alleles comprised single nucleotide variations when compared with homologous sequences. We identified nonsynonymous nucleotide mutations in 70.7% of all new alleles, synonymous variations in 26.4% and nonsense substitutions in 2.9% (null alleles). Some new alleles (55, 10.0%) were found multiple times, HLA-DPB1 alleles being the most frequent among these. Furthermore, as several new alleles were identified in individuals from ethnic minority groups, the relevance of recruiting donors belonging to such groups and the importance of ethnicity data collection in donor centers and registries is highlighted. PMID:26812061

  12. Experimental Demonstration of the Dependence of the First Hyperpolarizability of Donor-Acceptor Substituted Polyenes on the Ground-State Polarization and Bond Length Alternation

    NASA Technical Reports Server (NTRS)

    Bourhill, G.; Bredas, J-L.; Cheng, L-T.; Marder, S. R.; Meyers, F.; Perry, J. W.; Tiemann, B. G.

    1993-01-01

    The dependence of the product of the first hyperpolarizability, beta, and the ground-state dipole moment, mu, for a series of donor-acceptor polyenes with a large range of ground-state polarization, was measured in a variety of solvents by electric field induced second harmonic generation. The observed behavior of mu times beta as a function of ground-state polarization agrees well with theoretical predictions. In particular, as a function of increasing polarization, mu times beta was found to first increase, peak in a positive sense, decrease, pass through zero, become large and negative, and eventually peak in a negative sense.

  13. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    SciTech Connect

    Goyal, Nitin; Fjeldly, Tor A.

    2014-07-21

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  14. Impurities in Bose-Einstein Condensates: From Polaron to Soliton.

    PubMed

    Shadkhoo, Shahriar; Bruinsma, Robijn

    2015-09-25

    We propose that impurities in a Bose-Einstein condensate which is coupled to a transversely laser-pumped multimode cavity form an experimentally accessible and analytically tractable model system for the study of impurities solvated in correlated liquids and the breakdown of linear-response theory [corrected]. As the strength of the coupling constant between the impurity and the Bose-Einstein condensate is increased, which is possible through Feshbach resonance methods, the impurity passes from a large to a small polaron state, and then to an impurity-soliton state. This last transition marks the breakdown of linear-response theory. PMID:26451565

  15. Documented deaths of hepatic lobe donors for living donor liver transplantation.

    PubMed

    Trotter, James F; Adam, Rene; Lo, Chung Mau; Kenison, Jeremy

    2006-10-01

    The actual risk of death in hepatic lobe donors for living donor liver transplantation (LDLT) is unknown because of the lack of a comprehensive database. In the absence of a definitive estimate of the risk of donor death, the medical literature has become replete with anecdotal reports of donor deaths, many of which cannot be substantiated. Because donor death is one of the most important outcomes of LDLT, we performed a comprehensive survey of the medical and lay literature to provide a referenced source of worldwide donor deaths. We reviewed all published articles from the medical literature on LDLT and searched the lay literature for donor deaths from 1989 to February 2006. We classified each death as "definitely," "possibly," or "unlikely" related to donor surgery. We identified 19 donor deaths (and one additional donor in a chronic vegetative state). Thirteen deaths and the vegetative donor were "definitely," 2 were "possibly," and 4 were "unlikely" related to donor surgery. The estimated rate of donor death "definitely" related to donor surgery is 0.15%. The rate of donor death which is "definitely" or "possibly" related to the donor surgery is 0.20%. This analysis provides a source document of all identifiable living liver donor deaths, provides a better estimate of donor death rate, and may provide an impetus for centers with unreported deaths to submit these outcomes to the liver transplantation community. PMID:16952175

  16. Impurity scattering and Friedel oscillations in monolayer black phosphorus

    NASA Astrophysics Data System (ADS)

    Zou, Yong-Lian; Song, Juntao; Bai, Chunxu; Chang, Kai

    2016-07-01

    We study the impurity scattering effect in black phosphorene (BP) in this work. For a single impurity, we calculate the impurity-induced local density of states (LDOS) in momentum space numerically based on a tight-binding Hamiltonian. In real space, we calculate the LDOS and Friedel oscillation analytically. The LDOS shows strong anisotropy in BP. Many impurities in BP are investigated using the T -matrix approximation when the density is low. Midgap states appear in the band gap with peaks in the DOS. The peaks of midgap states are dependent on the impurity potential. For finite positive potential, the impurity tends to bind negative charge carriers and vice versa. The infinite-impurity-potential problem is related to chiral symmetry in BP.

  17. HLA-A, B and DRB1 allele and haplotype frequencies in volunteer bone marrow donors from the north of Parana State

    PubMed Central

    Bardi, Marlene Silva; Jarduli, Luciana Ribeiro; Jorge, Adylson Justino; Camargo, Rossana Batista Oliveira Godoy; Carneiro, Fernando Pagotto; Gelinski, Jair Roberto; Silva, Roseclei Assunção Feliciano; Lavado, Edson Lopes

    2012-01-01

    Background Knowledge of allele and haplotype frequencies of the human leukocyte antigen (HLA) system is important in the search for unrelated bone marrow donors. The Brazilian population is very heterogeneous and the HLA system is highly informative of populations because of the high level of polymorphisms. Aim The aim of this study was to characterize the immunogenetic profile of ethnic groups (Caucasians, Afro-Brazilians and Asians) in the north of Parana State. Methods A study was carried out of 3978 voluntary bone marrow donors registered in the Brazilian National Bone Marrow Donor Registry and typed for the HLA-A, B and DRB1 (low resolution) loci. The alleles were characterized by the polymerase chain reaction sequence-specific oligonucleotides method using the LabType SSO kit (One Lambda, CA, USA). The ARLEQUIN v.3.11 computer program was used to calculate allele and haplotype frequencies Results The most common alleles found in Caucasians were HLA-A*02, 24, 01; HLA-B*35, 44, 51; DRB1*11, 13, 07; for Afro-Brazilians they were HLA-A*02, 03, 30; HLA-B*35, 15, 44; DRB1*13, 11, 03; and for Asians they were: HLA-A*24, 02, 26; HLA-B*40, 51, 52; DRB1*04, 15, 09. The most common haplotype combinations were: HLA-A*01, B*08, DRB1*03 and HLA-A*29, B*44, DRB1*07 for Caucasians; HLA-A*29, B*44, DRB1*07 and HLA-A*01, B*08 and DRB1*03 for Afro-Brazilians; and HLA-A*24, B*52, DRB1*15 and HLA-A*24, B*40 and DRB1*09 for Asians. Conclusion There is a need to target and expand bone marrow donor campaigns in the north of Parana State. The data of this study may be used as a reference by the Instituto Nacional de Cancer/Brazilian National Bone Marrow Donor Registry to evaluate the immunogenetic profile of populations in specific regions and in the selection of bone marrow donors PMID:23049380

  18. Variation of the electronic densities of states as a function of impurity concentration in amorphous bismuth alloys

    NASA Astrophysics Data System (ADS)

    Mata-Pinzon, Zaahel; Valladares, Ariel Alberto; Valladares, Alexander; Valladares, Renela Maria

    2014-03-01

    The properties of materials are strongly related to their atomic topology, especially when we compare properties related to the ordered and disordered phases. Using Density Functional Theory methods on 64-atom supercells we obtain the structure and calculate the electronic density of states (eDOS) as a function of the concentration of lead, thallium or antimony in an amorphous bismuth supercell. This is done to investigate how the eDOS affects the superconducting transition temperature (Tc), taking into account the measurements made by Shier and Ginsberg[2] on contaminated amorphous bismuth thin films. Supported by CONACYT and DGAPA (UNAM).

  19. Guidelines and strategy of the International Conference of Harmonization (ICH) and its member states to overcome existing impurity control problems for antibiotics in China.

    PubMed

    Jiang, Yu; Xia, Jun-Ping; Yang, Jian-Hong; Zhang, Zhe-Feng; Hu, Chang-Qin; Zhang, Zhi-Rong

    2015-07-01

    In the present report, we review the technical guidelines and principles on impurity research and control for antibiotics established by various agencies, including the International Conference of Harmonization (ICH), the US Food and Drug Administration (FDA), the European Medicines Agency (EMA) and the China Food and Drug Administration (CFDA). Progresses with the US Pharmacopoeia (USP), the European Pharmacopoeia (EP) and the Chinese Pharmacopoeia (ChP) to control impurities in antibiotics are also presented. Next, our discussion is focused on analyzing the CFDA's requirements on impurity research and control for antibiotics, and the implementation of ICH, FDA and other technical guidelines for generic drugs impurity control in China. Existing problems are further reviewed, in order to improve the overall process for the control of antibiotic purity. PMID:26233840

  20. An introduction to blocked impurity band detectors

    NASA Technical Reports Server (NTRS)

    Geist, Jon

    1988-01-01

    Blocked impurity band detectors fabricated using standard silicon technologies offer the possibility of combining high sensitivity and high accuracy in a single detector operating in a low background environment. The solid state photomultiplier described by Petroff et al., which is a new type of blocked impurity band detector, offers even higher sensitivity as well as operation in the visible spectral region. The principle of operation and possible application of blocked impurity band detectors for stellar seismology and the search for extra-solar planets are described.

  1. Motion of a Distinguishable Impurity in the Bose Gas: Arrested Expansion Without a Lattice and Impurity Snaking

    NASA Astrophysics Data System (ADS)

    Robinson, Neil J.; Caux, Jean-Sébastien; Konik, Robert M.

    2016-04-01

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion—a period of quasistationary behavior. When the impurity is injected with a finite center-of-mass momentum, the impurity moves through the background gas in a snaking manner, arising from a quantum Newton's cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas.

  2. Motion of a Distinguishable Impurity in the Bose Gas: Arrested Expansion Without a Lattice and Impurity Snaking.

    PubMed

    Robinson, Neil J; Caux, Jean-Sébastien; Konik, Robert M

    2016-04-01

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion-a period of quasistationary behavior. When the impurity is injected with a finite center-of-mass momentum, the impurity moves through the background gas in a snaking manner, arising from a quantum Newton's cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas. PMID:27104716

  3. Motion of a distinguishable Impurity in the Bose gas: Arrested expansion without a lattice and impurity snaking

    DOE PAGESBeta

    Neil J. Robinson; Caux, Jean -Sebastien; Konik, Robert M.

    2016-04-07

    We consider the real-time dynamics of an initially localized distinguishable impurity injected into the ground state of the Lieb-Liniger model. Focusing on the case where integrability is preserved, we numerically compute the time evolution of the impurity density operator in regimes far from analytically tractable limits. We find that the injected impurity undergoes a stuttering motion as it moves and expands. For an initially stationary impurity, the interaction-driven formation of a quasibound state with a hole in the background gas leads to arrested expansion—a period of quasistationary behavior. In conclusion, when the impurity is injected with a finite center-of-mass momentum,more » the impurity moves through the background gas in a snaking manner, arising from a quantum Newton’s cradlelike scenario where momentum is exchanged back and forth between the impurity and the background gas.« less

  4. Impurities in snowpacks.

    PubMed

    Sommerfeld, R A

    1989-04-01

    Snow can be involved in the acquisition, transport, storage and release of atmospheric impurities. Because it can store impurities for periods of time ranging from hours to millenia, it provides a medium for monitoring atmospheric impurities for a wide range of time scales.In most climates, snow is involved in the precipitation process. It can acquire atmospheric impurities either as aerosols or as gases. The aereosols can be included in the body of the snow crystals or adhered to their surfaces. Gases may be included in bubbles, particularly in the case of rime, or adsorbed on the ice surfaces. The amount of ice surface in a small storm is about 10(10) m(2).Snow on the ground can store the impurities acquired in the precipitation process and can acquire additional impurities as dry deposition. The low temperatures and the fact that ice is a solid reduces biological activity and rates of inorganic reactions. However, the assumption that there is no activity in the winter is not well found. Exchange is possible between different layers of the snow and between the snow and the atmosphere, resulting in relocation of gases and aerosols. These processes also insure that the impurities reside on the exterior surfaces of the ice particles that form the snowpack. Biological activity is possible near the ground-snow interface in most climates.The seasonal snowpack releases its impurities when it melts. Because below freezing processes relocate any internal impurities to the ice surfaces within the snowpack, the impurities are available to the first melt water. Pulses of both acidic and alkalinic impurities have been observed with the initial snow melt water. However, the monitoring of such pulses is difficult and the measurements are inconsistent.Impurities are incorporated for longer periods of time in perennial snowpacks and finally in ice fields. These can be glaciers, or, at the largest scale, continental ice sheets. Coring such ice is expensive but provides data on

  5. Three Redox States of a Diradical Acceptor-Donor-Acceptor Triad: Gating the Magnetic Coupling and the Electron Delocalization.

    PubMed

    Souto, Manuel; Lloveras, Vega; Vela, Sergi; Fumanal, Maria; Ratera, Imma; Veciana, Jaume

    2016-06-16

    The diradical acceptor-donor-acceptor triad 1(••), based on two polychlorotriphenylmethyl (PTM) radicals connected through a tetrathiafulvalene(TTF)-vinylene bridge, has been synthesized. The generation of the mixed-valence radical anion, 1(•-), and triradical cation species, 1(•••+), obtained upon electrochemical reduction and oxidation, respectively, was monitored by optical and ESR spectroscopy. Interestingly, the modification of electron delocalization and magnetic coupling was observed when the charged species were generated and the changes have been rationalized by theoretical calculations. PMID:27231856

  6. Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band of localized and delocalized states

    SciTech Connect

    Bhuyan, Sumi; Pal, Bipul; Bansal, Bhavtosh; Das, Sanat K.; Dhar, Sunanda

    2014-07-14

    Optically active states in liquid phase epitaxy-grown ultra-dilute GaAsN are studied. The feature-rich low temperature photoluminescence spectrum has contributions from excitonic band states of the GaAsN alloy, and two types of defect states—localized and extended. The degree of delocalization for extended states both within the conduction and defect bands, characterized by the electron temperature, is found to be similar. The degree of localization in the defect band is analyzed by the strength of the phonon replicas. Stronger emission from these localized states is attributed to their giant oscillator strength.

  7. Impurity induced resistivity upturns in underdoped cuprates

    NASA Astrophysics Data System (ADS)

    Das, Nabyendu; Singh, Navinder

    2016-01-01

    Impurity induced low temperature upturns in both the ab-plane and the c-axis dc-resistivities of cuprates in the pseudogap state have been observed in experiments. We provide an explanation of this phenomenon by incorporating impurity scattering of the charge carriers within a phenomenological model proposed by Yang, Rice and Zhang. The scattering between charge carriers and the impurity atom is considered within the lowest order Born approximation. Resistivity is calculated within Kubo formula using the impurity renormalized spectral functions. Using physical parameters for cuprates, we describe qualitative features of the upturn phenomena and its doping evolution that coincides with the experimental findings. We stress that this effect is largely due to the strong electronic correlations.

  8. Influence of magnetic shear on impurity transport

    SciTech Connect

    Nordman, H.; Fueloep, T.; Candy, J.; Strand, P.; Weiland, J.

    2007-05-15

    The magnetic shear dependence of impurity transport in tokamaks is studied using a quasilinear fluid model for ion temperature gradient (ITG) and trapped electron (TE) mode driven turbulence in the collisionless limit and the results are compared with nonlinear gyrokinetic results using GYRO [J. Candy and R. E. Waltz, J. Comput. Phys 186, 545 (2003)]. It is shown that the impurity transport is sensitive to the magnetic shear, in particular for weak, negative, and large positive shear where a strong reduction of the effective impurity diffusivity is obtained. The fluid and gyrokinetic results are in qualitative agreement, with the gyrokinetic diffusivities typically a factor 2 larger than the fluid diffusivities. The steady state impurity profiles in source-free plasmas are found to be considerably less peaked than the electron density profiles for moderate shear. Comparisons between anomalous and neoclassical transport predictions are performed for ITER-like profiles [R. Aymar, P. Barabaschi, and Y. Shimomura, Plasma Phys. Controlled Fusion 44, 519 (2002)].

  9. DIVIMP Modeling of Impurity Transport in EAST

    NASA Astrophysics Data System (ADS)

    Wang, Fuqiong; Chen, Yiping; Hu, Liqun

    2014-07-01

    Simulations of carbon impurity transport in SOL/divertor plasmas with Ohmic heating on EAST tokamak were performed using the two-dimensional (2D) Monte Carlo impurity transport code DIVIMP. The background plasmas for DIVIMP simulations were externally taken from B2.5/Eirene calculation. Besides the basic output of DIVIMP, the 2D density distributions of the carbon impurity with different ionization states and neutral carbon atoms were obtained, the 2D distributions of CII and CIII emissivities from C+1 and C+2 radiation respectively were also calculated. Comparison between the measured and calculated CIII emissivities showed favorable agreement, indicating that the impurity physics transport models, as implemented in the DIVIMP code, are suitable for the EAST tokamak plasma condition.

  10. Numerical Studies of Impurities in Fusion Plasmas

    DOE R&D Accomplishments Database

    Hulse, R. A.

    1982-09-01

    The coupled partial differential equations used to describe the behavior of impurity ions in magnetically confined controlled fusion plasmas require numerical solution for cases of practical interest. Computer codes developed for impurity modeling at the Princeton Plasma Physics Laboratory are used as examples of the types of codes employed for this purpose. These codes solve for the impurity ionization state densities and associated radiation rates using atomic physics appropriate for these low-density, high-temperature plasmas. The simpler codes solve local equations in zero spatial dimensions while more complex cases require codes which explicitly include transport of the impurity ions simultaneously with the atomic processes of ionization and recombination. Typical applications are discussed and computational results are presented for selected cases of interest.

  11. The temporal dynamics of impurity photoconductivity in quantum wells in GaAs

    SciTech Connect

    Aleshkin, V. Ya. E-mail: aleshkin@ipm.sci-nnov.ru

    2015-10-15

    A theory of cascade capture at charged donors in quantum wells (QWs) is developed without using the Fokker-Planck approximation, which is not valid in QWs. The time dependences of impurity photoconductivity and photoelectron concentration in GaAs QWs are determined. The cascade capture time as a function of the charge donor concentration is calculated.

  12. Carbon as a Shallow Donor in Transparent Conducting Oxides

    NASA Astrophysics Data System (ADS)

    Lyons, J. L.; Steiauf, D.; Janotti, A.; Van de Walle, C. G.

    2014-12-01

    Carbon is a common unintentional impurity in oxide semiconductors. We use hybrid density functional theory to calculate the electronic and structural properties of carbon impurities in ZnO, In2O3 , and Ga2O3 —materials that are used as transparent conductors. In each of these semiconducting oxides, we find that carbon is most likely to occupy the cation site under most electronic and chemical potential conditions. In ZnO, CZn acts as a shallow double donor and exhibits large local breathing-mode relaxations. In In2O3 and Ga2O3 , C acts as a shallow donor and moves off the cation site to become threefold oxygen coordinated. In all three oxides, Ccation exhibits modest formation energies, indicating that these species will be likely to incorporate. Our results indicate that C impurities are suitable donor dopants in these oxides and will contribute to background n -type conductivity if unintentionally present.

  13. Adsorption and spin state properties of Cr, Ni, Mo, and Pt deposited on Li⁺ and Na⁺ monovalent cation impurities of MgO (001) surface: DFT calculations.

    PubMed

    Shalabi, Ahmad S; Assem, Mervat M; Soliman, Kamal A

    2011-12-01

    We have analyzed, by means of density functional theory calculations and the embedded cluster model, the adsorption and spin-state properties of Cr, Ni, Mo, and Pt deposited on a MgO crystal. We considered deposition at the Mg(2+) site of a defect-free surface and at Li(+) and Na(+) sites of impurity-containing surfaces. To avoid artificial polarization effects, clusters of moderate sizes with no border anions were embedded in simulated Coulomb fields that closely approximate the Madelung fields of the host surfaces. The interaction between a transition metal atom and a surface results from a competition between Hund's rule for the adsorbed atom and the formation of a chemical bond at the interface. We found that the adsorption energies of the metal atoms are significantly enhanced by the cation impurities, and the adsorption energies of the low-spin states of spin-quenched complexes are always more favorable than those of the high-spin states. Spin polarization effects tend to preserve the spin states of the adsorbed atoms relative to those of the isolated atoms. The metal-support interactions stabilize the low-spin states of the adsorbed metals with respect to the isolated metals, but the effect is not always enough to quench the spin. Spin quenching occurs for Cr and Mo complexes at the Mg(2+) site of the pure surface and at Li(+) and Na(+) sites of the impurity-containing surfaces. Variations of the spin-state properties of free metals and of the adsorption and spin-state properties of metal complexes are correlated with the energies of the frontier orbitals. The electrostatic potential energy curves provide further understanding of the nature of the examined properties. PMID:21369929

  14. Chromium as Resonant Donor Impurity in PbTe

    SciTech Connect

    Nielsen, M.D.; Levin, Evgenii; Jaworski, C.M.; Schmidt-Rohr, Klaus; Heremans, J.P.

    2012-01-25

    We synthesize and perform structural, thermoelectric, magnetic, and 125Te NMR characterization measurements on chromium-doped PbTe. 125Te NMR and magnetic measurements show that Pb1−xCrxTe is a solid solution up to x = 0.4 at.% and forms an n-type dilute paramagnetic semiconductor. The Cr level is resonant and pins the Fermi level about 100 meV into the conduction band at liquid nitrogen temperatures and below, but it moves into the gap as the temperature increases to 300 K. 125Te NMR spectra exhibit a Knight shift that correlates well with Hall effect measurements and resolve peaks of Te near Cr. Magnetic behavior indicates that Cr exists mainly as Cr2+. No departure from the Pisarenko relation for PbTe is observed. Secondary Cr2Te3 and Cr3+δTe4 phases are present in samples with x > 0.4%.

  15. Alternative Donor--Acceptor Stacks from Crown Ethers and Naphthalene Diimide Derivatives: Rapid, Selective Formation from Solution and Solid State Grinding

    SciTech Connect

    Advanced Light Source; Liu, Yi; Klivansky, Liana; Cao, Dennis; Snauko, Marian; Teat, Simon J.; Struppe, Jochem O.; Koshkakaryan, Gayane

    2009-01-22

    Self assembling {pi}-conjugated molecules into ordered structures are of increasing interest in the field of organic electronics. One particular example is charge transfer complexes containing columnar alternative donor-acceptor (ADA) stacks, where neutral and ionic ground states can be readily tuned to modulate electrical, optical, and ferroelectrical properties. Aromatic-aromatic and charge transfer interactions have been the leading driving forces in assisting the self-assembly of ADA stacks. Various folding structures containing ADA stacks were assembled in solution with the aid of solvophobic or ion-binding interactions. Meanwhile, examples of solid ADA stacks, which are more appealing for practical use in devices, were obtained from cocrystalization of binary components or mesophase assembly of liquid crystals in bulk blends. Regardless of these examples, faster and more controllable approaches towards precise supramolecular order in the solid state are still highly desirable.

  16. Complexation of Donor-Acceptor Substituted Aza-Crowns with Alkali and Alkaline Earth Metal Cations. Charge Transfer and Recoordination in Excited State.

    PubMed

    Volchkov, Valery V; Gostev, Fedor E; Shelaev, Ivan V; Nadtochenko, Viktor A; Dmitrieva, Svetlana N; Gromov, Sergey P; Alfimov, Mikhail V; Melnikov, Mikhail Ya

    2016-03-01

    Complexation between two aza-15-crown-5 ethers bearing electron donor and acceptor fragments and alkali and alkaline earth perchlorates has been studied using absorption, steady-state fluorescence and femtosecond transient absorption spectroscopy. The spectral-luminescent parameters, the stability and dissociation constants of the complexes were calculated. The intramolecular charge transfer reaction takes place both in the excited state of the crowns and their complexes 1:1; the latter is subjected to photorecoordination resulting in a weakening or a complete disruption of coordination bond between nitrogen atom and metal cation, disposed within a cavity of the crown. The compounds investigated can be viewed as novel optical molecular sensors for alkali and alkaline-earth metal cations. The photoejection of a metal cation into the bulk was not observed. PMID:26670689

  17. Towards quantum information processing with impurity spins insilicon

    SciTech Connect

    Schenkel, T.; Liddle, J.A.; Bokor, J.; Rangelow, I.W.; Park,S.J.; Persaud, A.

    2004-03-01

    The finding of algorithms for factoring and data base search that promise substantially increased computational power, as well as the expectation for efficient simulation of quantum systems have spawned an intense interest in the realization of quantum information processors [1]. Solid state implementations of quantum computers scaled to >1000 quantum bits ('qubits') promise to revolutionize information technology, but requirements with regard to sources of decoherence in solid state environments are sobering. Here, we briefly review basic approaches to impurity spin based qubits and present progress in our effort to form prototype qubit test structures. Since Kane's bold silicon based spin qubit proposal was first published in 1998 [2], several groups have taken up the challenge of fabricating elementary building blocks [3-5], and several exciting variations of single donor qubit schemes have emerged [6]. Single donor atoms, e. g. {sup 31}P, are 'natural quantum dots' in a silicon matrix, and the spins of electrons and nuclei of individual donor atoms are attractive two level systems for encoding of quantum information. The coupling to the solid state environment is weak, so that decoherence times are long (hours for nuclear spins, and {approx}60 ms for electron spins of isolated P atoms in silicon [7]), while control over individual spins for one qubit operations becomes possible when individual qubits are aligned to electrodes that allow shifting of electron spin resonances in global magnetic fields by application of control voltages. Two qubit operations require an interaction that couples, and entangles qubits. The exchange interaction, J, is a prime candidate for mediation of two qubit operations, since it can be turned on and off by variation of the wave function overlap between neighboring qubits, and coherent manipulation of quantum information with the exchange interaction alone has been shown to be universal [8]. However, detailed band structure

  18. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  19. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  20. Equation of State for thermodynamic equilibrium of gas mixtures and brines to allow simulation of the effects of impurities in CO2 storage

    NASA Astrophysics Data System (ADS)

    Ziabakhshganji, Z.; Kooi, H.

    2012-04-01

    Comprehensive understanding and prediction of chemical, reactive processes during and following injection of CO2 in depleted gas reservoirs and saline aquifers is important for the assessment of the performance and impacts of planned and existing Carbon Capture and Storage (CCS) projects. Over the last decade significant improvements have been made in numerical modelling of the complex, coupled processes involved. Among the many remaining issues where progress is still called for, is the consistent simulation of impacts of gas mixtures. In particular the presence of 'impurities' or 'co-contaminants' in the injected CO2 stream that are retained from the original flue-gases, such as H2S, SO2, have the potential, upon dissolution in the pore water, to alter aqueous and water-mineral reactions. Moreover, presence of these and other injected or in-situ (CH4) gases affect CO2 solubility and thermodynamic properties of the fluid and gas phases, which, in turn, impact transport processes. To be able to evaluate the impact of gas mixtures on these processes, a new non-iterative Equation of State (EOS) has been developed which allows accurate and efficient modelling of thermodynamic equilibrium of gas mixtures and brines over a large range of pressure, temperature and salinity conditions. Presently the model includes CO2, SO2, H2S, CH4 and N2. This model is based on equating the chemical potentials in the system, using the modified Redlich-Kwong EOS to calculate the fugacity of the gas phase. Preliminary analysis shows, for instance, that CO2 solubility is most sensitive to CH4 admixture and least sensitive to the presence of SO2 in the injected gas mixture. The model design/approach will be outlined. Furthermore, the model performance will be illustrated with respect to experimental data from literature and other EOS's. In further work we aim to use this EOS in coupled flow and chemical reactive-transport simulations to investigate the impact of gas mixtures for CO2 storage.

  1. Impurity control in TFTR

    SciTech Connect

    Cecchi, J.L.

    1980-06-01

    The control of impurities in TFTR will be a particularly difficult problem due to the large energy and particle fluxes expected in the device. As part of the TFTR Flexibility Modification (TEM) project, a program has been implemented to address this problem. Transport code simulations are used to infer an impurity limit criterion as a function of the impurity atomic number. The configurational designs of the limiters and associated protective plates are discussed along with the consideration of thermal and mechanical loads due to normal plasma operation, neutral beams, and plasma disruptions. A summary is given of the materials-related research, which has been a collaborative effort involving groups at Argonne National Laboratory, Sandia Laboratories, and Princeton Plasma Physics Laboratory. Conceptual designs are shown for getterng systems capable of regenerating absorbed tritium. Research on this topic by groups at the previously mentioned laboratories and SAES Research Laboratory is reviewed.

  2. Rydberg Impurity Probes in Ultracold Gases

    NASA Astrophysics Data System (ADS)

    Mitchison, Mark; Johnson, Tomi; Plenio, Martin; Jaksch, Dieter

    2015-03-01

    Impurities immersed in ultracold gases can act as highly sensitive, tunable and potentially non-destructive probes of their environment. In this setting, we propose the use of an atomic impurity in a Rydberg state to measure density fluctuations via Ramsey interferometry. The rapid collisional dynamics of the light Rydberg electron interacting with the heavy gas particles, combined with the capability to quickly change the state of the impurity with optical pulses, make such a probe ideal for measuring local properties of ultracold gases. Our proposed device promises angle-resolved density measurements with sub-micron spatial resolution, and with no need to integrate over the line of sight. We outline how Rydberg impurity probes could be applied to study various interesting quantum states of current experimental relevance. We also discuss the possibility of using multiple Rydberg atoms to extract the spatial pair distribution function g (2) (r). Our work is placed in the context of other recently proposed impurity-based probes.

  3. High prevalence anti-Trypanosoma cruzi antibodies, among blood donors in the State of Puebla, a non-endemic area of Mexico.

    PubMed

    Sánchez-Guillén, M C; Barnabé, C; Guégan, J F; Tibayrenc, M; Velásquez-Rojas, M; Martínez-Munguía, J; Salgado-Rosas, H; Torres-Rasgado, E; Rosas-Ramírez, M I; Pérez-Fuentes, R

    2002-10-01

    Blood transfusion is the second most common transmission route of Chagas disease in many Latin American countries. In Mexico, the prevalence of Chagas disease and impact of transfusion of Trypanosoma cruzi-contaminated blood is not clear. We determined the seropositivity to T. cruzi in a representative random sample, of 2,140 blood donors (1,423 men and 647 women, aged 19-65 years), from a non-endemic state of almost 5 millions of inhabitants by the indirect hemagglutination (IHA) and enzyme linked immunosorbent assay (ELISA) tests using one autochthonous antigen from T. cruzi parasites, which were genetically characterized like TBAR/ME/1997/RyC-V1 (T. cruzi I) isolated from a Triatoma barberi specimen collected in the same locality. The seropositivity was up to 8.5% and 9% with IHA and ELISA tests, respectively, and up to 7.7% using both tests in common. We found high seroprevalence in a non-endemic area of Mexico, comparable to endemic countries where the disease occurs, e.g. Brazil (0.7%), Bolivia (13.7%) and Argentina (3.5%). The highest values observed in samples from urban areas, associated to continuous rural emigration and the absence of control in blood donors, suggest unsuspected high risk of transmission of T. cruzi, higher than those reported for infections by blood e.g. hepatitis (0.1%) and AIDS (0.1%) in the same region. PMID:12471419

  4. Complete Monitoring of Coherent and Incoherent Spin Flip Domains in the Recombination of Charge-Separated States of Donor-Iridium Complex-Acceptor Triads.

    PubMed

    Klein, Johannes H; Schmidt, David; Steiner, Ulrich E; Lambert, Christoph

    2015-09-01

    The spin chemistry of photoinduced charge-separated (CS) states of three triads comprising one or two triarylamine donors, a cyclometalated iridium complex sensitizer and a naphthalene diimide (NDI) acceptor, was investigated by transient absorption spectroscopy in the ns-μs time regime. Strong magnetic-field effects (MFE) were observed for two triads with a phenylene bridge between iridium complex sensitizer and NDI acceptor. For these triads, the lifetimes of the CS states increased from 0.6 μs at zero field to 40 μs at about 2 T. Substituting the phenylene by a biphenyl bridge causes the lifetime of the CS state at zero field to increase by more than 2 orders of magnitude (τ = 79 μs) and the MFE to disappear almost completely. The kinetic MFE was analyzed in the framework of a generalized Hayashi-Nagakura scheme describing coherent (S, T0 ↔ T±) as well as incoherent (S, T0 ⇌ T±) processes by a single rate constant k±. The magnetic-field dependence of k± of the triads with phenylene bridge spans 2 orders of magnitude and exhibits a biphasic behavior characterized by a superposition of two Lorentzians. This biphasic MFE is observed for the first time and is clearly attributable to the coherent (B < 10 mT) and incoherent (10 mT < B < 2 T) domains of spin motion induced by isotropic and anisotropic hyperfine coupling. The parameters of both domains are well understood in terms of the structural properties of the two triads, including the effect of electron hopping in the triad with two donor moieties. The kinetic model also accounts for the reduction of the MFE on reducing the rate constant of charge recombination in the triad with the biphenyl bridge. PMID:26091082

  5. Transition metal-mediated donor-acceptor coordination of low-oxidation state Group 14 element halides.

    PubMed

    Swarnakar, Anindya K; Ferguson, Michael J; McDonald, Robert; Rivard, Eric

    2016-03-30

    The reactivity of tungsten carbonyl adducts of Group 14 element (Ge, Sn and Pb) dihalides towards the metal-based donors (η(5)-C5H5)Rh(PMe2Ph)2 and Pt(PCy3)2 was examined. When (η(5)-C5H5)Rh(PMe2Ph)2 was treated with the Lewis acid supported Ge(ii) complex, THF·GeCl2·W(CO)5, cyclopentadienyl ring activation occurred, whereas the analogous Lewis acidic units SnCl2·W(CO)5 and PbCl2 form direct adducts with the Rh complex to yield Rh-Sn and Rh-Pb dative bonds. Attempts to prepare metal coordinated element(ii) hydrides by adding hydride sources to the above mentioned rhodium-E(ii) halide complexes were unsuccessful; in each case insoluble products were formed along with regeneration of free (η(5)-C5H5)Rh(PMe2Ph)2. In a parallel study, ECl2·W(CO)5 (E = Ge or Sn) groups were shown to participate in E-Cl oxidation addition chemistry with (Cy3P)2Pt to give the formal Pt(ii) complexes ClPt(PCy3)2ECl·W(CO)5. PMID:26373599

  6. Detection of impurity diamagnetic susceptibility and its behavior in n-Ge:As in the region of the insulator–metal phase transition

    SciTech Connect

    Veinger, A. I. Zabrodskii, A. G.; Makarova, T. L.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.

    2015-10-15

    The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–metal phase transition. Subtracting the known values of the magnetic susceptibility of the lattice from the measurement results, the values of the impurity magnetic susceptibility of the system are obtained. Using the method of electron spin resonance, the paramagnetic component of the impurity susceptibility is determined. Subtraction of the paramagnetic component from the total impurity susceptibility is used to obtain, for the first time, the values of the impurity diamagnetic susceptibility (∼5 × 10{sup –8} cm{sup 3}/g). The obtained result is consistent with estimates obtained for the localization radius of an electron at an As donor. Lowering the temperature to T ≤ 4 K leads to an increase in the diamagnetic susceptibility, which is consistent with the observed increase in the paramagnetic susceptibility. The observed effect is accounted for by the transition of impurity electrons from the singlet state to the triplet one.

  7. Utilization of Expanded Criteria Donors in Liver Transplantation

    PubMed Central

    Saidi, Reza F.

    2013-01-01

    Improvements in surgical techniques, immunosuppression, and post-transplantation patient care have led to the optimization of liver transplantation outcomes. However, the waiting list for liver transplantation is increasing at a greater pace. The large gap between the growing pool of patients waiting for liver transplantation and the scarcity of donor organs has fueled efforts to maximize existing donors and identify new sources. This article will be focused on the current state of liver transplantation using grafts from extended criteria donors (elderly donors, steatotic donors, donors with malignancies, donors with viral hepatitis) and from donation after cardiac death (DCD), as well as the use of partial grafts (split grafts and living-donor liver transplantation) and other suboptimal donors (donors with hypernatremia, infections, hypotension and inotropic support). Overall, broadened criteria for acceptable donor livers appear to lessen graft survival rates somewhat compared with rates for standard criteria organs. PMID:25013654

  8. Dynamical impurity problems

    SciTech Connect

    Emery, V.J.; Kivelson, S.A.

    1993-12-31

    In the past few years there has been a resurgence of interest in dynamical impurity problems, as a result of developments in the theory of correlated electron systems. The general dynamical impurity problem is a set of conduction electrons interacting with an impurity which has internal degrees of freedom. The simplest and earliest example, the Kondo problem, has attracted interest since the mid-sixties not only because of its physical importance but also as an example of a model displaying logarithmic divergences order by order in perturbation theory. It provided one of the earliest applications of the renormalization group method, which is designed to deal with just such a situation. As we shall see, the antiferromagnetic Kondo model is controlled by a strong-coupling fixed point, and the essence of the renormalization group solution is to carry out the global renormalization numerically starting from the original (weak-coupling) Hamiltonian. In these lectures, we shall describe an alternative route in which we identify an exactly solvable model which renormalizes to the same fixed point as the original dynamical impurity problem. This approach is akin to determining the critical behavior at a second order phase transition point by solving any model in a given universality class.

  9. Quantum impurities: from mobile Josephson junctions to depletons

    NASA Astrophysics Data System (ADS)

    Schecter, Michael; Gangardt, Dimitri M.; Kamenev, Alex

    2016-06-01

    We overview the main features of mobile impurities moving in one-dimensional superfluid backgrounds by modeling it as a mobile Josephson junction, which leads naturally to the periodic dispersion of the impurity. The dissipation processes, such as radiative friction and quantum viscosity, are shown to result from the interaction of the collective phase difference with the background phonons. We develop a more realistic depleton model of an impurity-hole bound state that provides a number of exact results interpolating between the semiclassical weakly interacting picture and the strongly interacting Tonks–Girardeau regime. We also discuss the physics of a trapped impurity, relevant to current experiments with ultra cold atoms.

  10. Reduction of electron accumulation at InN(0001) surfaces via saturation of surface states by potassium and oxygen as donor- or acceptor-type adsorbates

    SciTech Connect

    Eisenhardt, A.; Reiß, S.; Krischok, S. Himmerlich, M.

    2014-01-28

    The influence of selected donor- and acceptor-type adsorbates on the electronic properties of InN(0001) surfaces is investigated implementing in-situ photoelectron spectroscopy. The changes in work function, surface band alignment, and chemical bond configurations are characterized during deposition of potassium and exposure to oxygen. Although an expected opponent charge transfer characteristic is observed with potassium donating its free electron to InN, while dissociated oxygen species extract partial charge from the substrate, a reduction of the surface electron accumulation occurs in both cases. This observation can be explained by adsorbate-induced saturation of free dangling bonds at the InN resulting in the disappearance of surface states, which initially pin the Fermi level and induce downward band bending.

  11. Ethnic differences in intention to enroll in a state organ donor registry and intention to talk with family about organ donation.

    PubMed

    Park, Hee Sun; Smith, Sandi W; Yun, Doshik

    2009-10-01

    This study compared African Americans, Asian Americans, Hispanic Americans, Native Americans, and White Americans on their intentions to enroll in a state organ donor registry and to talk with family about organ donation. The overall results showed that attitudes and subjective norms from the theory of planned behavior were significantly related to intention to enroll whereas perceived behavioral control was not. Attitudes, subjective norms, and perceived behavioral control were significantly related to intention to talk with family. The differences among ethnic groups were small, but the relationship between attitudes and intention to enroll was stronger for Asian Americans and weaker for African Americans than for White Americans. The implications of these and other findings are discussed for organ donation campaigns. PMID:20183372

  12. Impurity binding energies in quantum dots with parabolic confinement

    NASA Astrophysics Data System (ADS)

    Abramov, Arnold

    2015-03-01

    We present an effective numerical procedure to calculate the binding energies and wave functions of the hydrogen-like impurity states in a quantum dot (QD) with parabolic confinement. The unknown wave function was expressed as an expansion over one-dimensional harmonic oscillator states, which describes the electron's movement along the defined z-axis. Green's function technique used to obtain the solution of Schredinger equation for electronic states in a transverse plane. Binding energy of impurity states is defined as poles of the wave function. The dependences of the binding energy on the position of an impurity, the size of the QD and the magnetic field strength are presented and discussed.

  13. Hybrid functional calculations of Copper impurities and related complexes in Silicon

    NASA Astrophysics Data System (ADS)

    Sharan, Abhishek; Gui, Zhigang; Janotti, Anderson

    Copper impurities affect electronic and optical properties of semiconductors. Cu is an ubiquitous impurity and can be introduced unintentionally during various processing step. In silicon, the fast-diffusing interstitial Cu donor often passivates shallow-acceptor dopants, affecting the electronic characteristics of devices, while deep levels associated with other forms of the Cu impurity degrade device performance. Here we revisit the problem of the Cu impurity in Si using first principles calculation based on a hybrid functional. We discuss the relative stability of the substitutional and interstitial forms, as well as the formation of complexes with hydrogen and oxygen impurities. The results of our calculations will be compared with recent experiments on the electrical activity of Cu impurities in Si.

  14. Donor spectroscopy at large hydrostatic pressures and transport studies in compound semiconductors

    SciTech Connect

    Hsu, L.

    1997-06-01

    In the first part of this work, the author describes studies of donors in AlSb and in GaAs at large hydrostatic pressures, two materials in which the conduction band minimum is not parabolic, but has a camel`s back shape. These donors were found to display only one or two absorption lines corresponding to ground to bound excited state transitions. It is shown that due to the non-parabolic dispersion, camel`s back donors may have as few as one bound excited state and that higher excited states are auto-ionized. Thus, it is possible that transitions to these other states may be lost in the continuum. In the second part, calculations of mobilities in GaN and other group III-Nitride based structures were performed. GaN is interesting in that the carriers in nominally undoped material are thought to originate from impurities which have an ionization energy level resonant with the conduction band, rather than located in the forbidden gap. These donors have a short range potential associated with them which can be effective in scattering electrons in certain situations. It was found that effects of these resonant donors can be seen only at high doping levels in III-Nitride materials and in Al{sub x}Ga{sub 1{minus}x}N alloys, where the defect level can be pushed into the forbidden gap. Calculations were also performed to find intrinsic mobility limits in Al{sub x}Ga{sub 1{minus}x}N/GaN modulation doped heterostructures. Theoretical predictions show that electron mobilities in these devices are capable of rivaling those found in the best Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures structures today. However, the currently available nitride heterostructures, while displaying mobilities superior to those in bulk material, have sheet carrier concentrations too large to display true two-dimensional electron gas behavior.

  15. PAC studies on impurities in ZnO

    NASA Astrophysics Data System (ADS)

    Deubler, S.; Meier, J.; Schütz, R.; Witthuhn, W.

    1992-01-01

    Acceptor-donor pairs in ZnO are studied by the perturbed angular correlation spectroscopy (PAC) using radioactive 111In/ 111Cd probe atoms. In undoped ZnO the trapping of O-vacancies as well as the trapping of Zn-interstitials at the probe atoms which are located at substitutional Zn sites is observed after different sample treatments. In Cu-, Li-, and Na-doped ZnO the acceptor impurities form complexes with the In donors. The structure of these complexes is given and compared with theoretical calculations.

  16. Mapping itinerant electrons around Kondo impurities.

    PubMed

    Prüser, H; Wenderoth, M; Weismann, A; Ulbrich, R G

    2012-04-20

    We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant electrons at the surface, the Kondo resonance near the Fermi energy is analyzed. Probing bulk impurities in this well-defined scattering geometry allows separating the physics of the Kondo system and the measuring process. The line shape of the Kondo signature shows an oscillatory behavior as a function of depth of the impurity as well as a function of lateral distance. The oscillation period along the different directions reveals that the spectral function of the itinerant electrons is anisotropic. PMID:22680744

  17. Impurities in the Lithium Tokamak Experiment

    NASA Astrophysics Data System (ADS)

    Boyle, D. P.; Bell, R. E.; Kaita, R.; Majeski, R.; Biewer, T. M.; Gray, T. K.; Tritz, K.; Widmann, K.

    2014-10-01

    The Lithium Tokamak Experiment (LTX) is designed to study the low-recycling regime through the use of close-fitting, lithium-coated, heatable shell quadrants surrounding the plasma volume. Lithium coatings can getter and bury impurities, but they can also become covered by impurity compounds. Liquefied coatings can both dissolve impurity compounds and bring them to the surface, while sputtering and evaporation rates increase strongly with temperature. Here, we use spectroscopic measurements to assess the effects of varying wall conditions on plasma impurities, mainly Li, C, and O. A passive Doppler spectroscopy system measures toroidal and poloidal impurity profiles using fixed-wavelength and variable-wavelength visible spectrometers. In addition, survey and high-resolution extreme ultraviolet spectrometers detect emission from higher charge states. Preliminary results show that fresh Li coatings generally reduced C and O emission. C emission decreased sharply following the first solid Li coatings. Inverted toroidal profiles in a discharge with solid Li coatings show peaked Li III emissivity and temperature profiles. Recently, experiments with fresh liquid coatings led to especially strong O reduction. Results from these and additional experiments will be presented. Supported by US DOE Contracts DE-AC02-09CH11466 and DE-AC05-00OR22725.

  18. High-contrast fluorescence sensing of aqueous Cu(I) with triaryl-pyrazoline probes: Dissecting the roles of ligand donor strength and excited state proton transfer

    PubMed Central

    Morgan, M. Thomas; Bagchi, Pritha; Fahrni, Christoph J.

    2012-01-01

    Cu(I)-responsive fluorescent probes based on a photoinduced electron transfer (PET) mechanism generally show incomplete fluorescence recovery relative to the intrinsic quantum yield of the fluorescence reporter. Previous studies on probes with an N-aryl thiazacrown Cu(I)-receptor revealed that the recovery is compromised by incomplete Cu(I)-N coordination and resultant ternary complex formation with solvent molecules. Building upon a strategy that successfully increased the fluorescence contrast and quantum yield of Cu(I) probes in methanol, we integrated the arylamine PET donor into the backbone of a hydrophilic thiazacrown ligand with a sulfonated triarylpyrazoline as a water-soluble fluorescence reporter. This approach was not only expected to disfavor ternary complex formation in aqueous solution but also to maximize PET switching through a synergistic Cu(I)-induced conformational change. The resulting water-soluble probe 1 gave a strong 57-fold fluorescence enhancement upon saturation with Cu(I) with high selectivity over other cations, including Cu(II), Hg(II), and Cd(II); however, the recovery quantum yield did not improve over probes with the original N-aryl thiazacrown design. Concluding from detailed photophysical data, including responses to acidification, solvent isotope effects, quantum yields, and time-resolved fluorescence decay profiles, the fluorescence contrast of 1 is compromised by inadequate coordination of Cu(I) to the weakly basic arylamine nitrogen of the PET donor and by fluorescence quenching via two distinct excited state proton transfer pathways operating under neutral and acidic conditions. PMID:23169532

  19. X-point Shallow Donors in GaAs under pressure

    NASA Astrophysics Data System (ADS)

    Hsu, L.; Haller, E. E.

    1996-03-01

    Transitions from the ground to bound excited states associated with shallow donors in GaAs under large hydrostatic pressure are studied with IR absorption spectroscopy. A modified Merrill-Basset diamond anvil cell was used to apply hydrostatic pressures of several GPa to lightly doped ( 10^15 cm-3) n-type GaAs samples. At such pressures, the energy of the conduction band at the X point falls below that at the Γ point and the wavefunctions of donor impurities take on X-band character. The deep DX centers which exist at these pressures were converted to shallow donors by illumination at low temperature with a red LED. The X-band absorption spectra for Sn and Si show one line each at 50 and 61 meV, respectively. The spectrum for S shows a broad absorption starting at 90 meV, which shifts to lower energies with increasing pressure. The presence of only one line in the Si and Sn spectra can be explained by the non-parabolicity of the X-point conduction band minimum. The binding energies of these donors are estimated to be 74, 85, and 117 meV for Sn, Si, and S respectively. This work supported by USNSF DMR-94 17763.

  20. Characteristics of impurity-induced pseudogap

    NASA Astrophysics Data System (ADS)

    Numata, Yoshinori; Uto, Tatsuro; Matuda, Azusa

    2016-05-01

    We have performed STM/STS measurements on a single crystal of Bi2.1Sr1.9Ca (Cu1-xCox) 2O8+δ (Co-Bi2212), to reveal impurity effects on the pseudogap in cuprate high-Tc superconductors. We report a drastic change in the temperature dependence of a pseudogap and in the density of states (DOS) modulation with a 4a period, in a certain doping range. In the Co 4% substituted samples, the pseudogap gradually closed like a gap of a BCS superconductor for slightly overdoped and overdoped regime, while their low temperature values were enhanced due to impurity. In addition, a disappearance of a 4a periodic modulation and a development of new modulation were observed in the DOS spatial distribution. These results indicate an intimate relation between the DOS modulation and the pseudogap, and qualitative difference in the impurity enhanced pseudogap and conventional one.

  1. Single atom impurity in a single molecular transistor

    SciTech Connect

    Ray, S. J.

    2014-10-21

    The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the position of the impurity atom in such devices which together with the charging energy of the molecule could be utilised as an electronic fingerprint for the detection of such impurity states in a nano-electronic device. The two gated geometry allows additional control over the electrostatics as can be seen from the total energy surfaces (for a specific charge state), which is sensitive to the positions of the impurity. These devices which are operational at room temperature can provide significant advantages over the conventional silicon based single dopant devices functional at low temperature. The present approach could be a very powerful tool for the detection and control of individual impurity atoms in a single molecular device and for applications in future molecular electronics.

  2. Monitoring Changes in the Redox State of Myoglobin in Cardiomyocytes by Raman Spectroscopy Enables the Protective Effect of NO Donors to Be Evaluated.

    PubMed

    Almohammedi, Abdullah; Kapetanaki, Sofia M; Hudson, Andrew J; Storey, Nina M

    2015-10-20

    Raman microspectroscopy has been used to monitor changes in the redox and ligand-coordination states of the heme complex in myoglobin during the preconditioning of ex vivo cardiomyocytes with pharmacological drugs that release nitric oxide (NO). These chemical agents are known to confer protection on heart tissue against ischemia-reperfusion injury. Subsequent changes in the redox and ligand-coordination states during experimental simulations of ischemia and reperfusion have also been monitored. We found that these measurements, in real time, could be used to evaluate the preconditioning treatment of cardiomyocytes and to predict the likelihood of cell survival following a potentially lethal period of ischemia. Evaluation of the preconditioning treatment was done at the single-cell level. The binding of NO to myoglobin, giving a 6-coordinate ferrous-heme complex, was inferred from the measured Raman bands of a cardiomyocyte by comparison to pure solution of the protein in the presence of NO. A key change in the Raman spectrum was observed after perfusion of the NO-donor was completed, where, if the preconditioning treatment was successful, the bands corresponding to the nitrosyl complex were replaced by bands corresponding to metmyoglobin, Mb(III). An observation of Mb(III) bands in the Raman spectrum was made for all of the cardiomyocytes that recovered contractile function, whereas the absence of Mb(III) bands always indicated that the cardiomyocyte would be unable to recover contractile function following the simulated conditions of ischemia and reperfusion in these experiments. PMID:26407187

  3. Donor Tag Game

    MedlinePlus

    ... Cross chapter closest to you. Can't Donate Blood? A financial donation can also help save lives. Donate Now Find ... Donation Student Donors Donation Process Eligibility Blood FAQs Blood Donor Community Learn About Blood Blood Facts and Statistics ...

  4. Mapping Local Quantum Capacitance and Charged Impurities in Graphene via Plasmonic Impedance Imaging.

    PubMed

    Shan, Xiaonan; Chen, Shan; Wang, Hui; Chen, Zixuan; Guan, Yan; Wang, Yixian; Wang, Shaopeng; Chen, Hong-Yuan; Tao, Nongjian

    2015-10-28

    Local quantum capacitance of graphene is imaged with plasmonics-based electrical impedance microscopy, from which the local density and polarity of charged impurities, electron and hole puddles associated with the charged impurities, and the density of the impurity states are determined. PMID:26356349

  5. Calculation of the spin-polarized electronic structure of an interstitial iron impurity in silicon

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, H.; Zunger, Alex

    1985-06-01

    We apply our self-consistent, all-electron, spin-polarized Green's-function method within an impurity-centered, dynamic basis set to study the interstitial iron impurity in silicon. We use two different formulations of the interelectron interactions: the local-spin-density (LSD) formalism and the self-interaction-corrected (SIC) local-spin-density (SIC-LSD) formalism. We find that the SIC-LSD approach is needed to obtain the correct high-spin ground state of Si:Fe+. We propose a quantitative explanation to the observed donor ionization energy and the high-spin ground states for Si:Fe+ within the SIC-LSD approach. For both Si:Fe0 and Si:Fe+, this approach leads to a hyperfine field, contact spin density, and ionization energy in better agreement with experiments than the simple LSD approach. The apparent dichotomy between the covalently delocalized nature of Si:Fe as suggested on the one hand by its reduced hyperfine field (relative to the free atom) and extended spin density and by the occurrence of two closely spaced, stable charge states (within 0.4 eV) and on the other hand by the atomically localized picture (suggested, for example, by the stability of a high-spin, ground-state configuration) is resolved. We find a large reduction in the hyperfine field and contact spin density due to the covalent hybridization between the impurity 3d orbitals and the tails of the delocalized sp3 hybrid orbitals of the surrounding silicon atoms. Using the calculated results, we discuss (i) the underlying mechanism for the stability and plurality of charged states, (ii) the covalent reduction in the hyperfine field, (iii) the remarkable constancy of the impurity Mössbauer isomer shift for different charged states, (iv) comparison with the multiple charged states in ionic crystals, and (v) some related speculation about the mechanism of (Fe2+/Fe3+) oxidation-reduction ionizations in heme proteins and electron-transporting biological systems.

  6. Influence of grain boundary silica impurity on alumina toughness

    SciTech Connect

    Moya, J.S.; Kriven, W.M.; Pask, J.A.

    1980-08-01

    In a series of previous reports the effect of silica impurity on aggregation state and on electropheretic, pressing, filtering and sintering behavior on alumina powders was presented. The results obtained showed that the silica surface impurity plays an important role in the ceramic processing of powders by (a) decreasing the pH values of the isoelectric point (i.e.p.), which affects the aggregation state of the powder, and (b) decreasing the compactability and the activation energy for the initial stage of sintering. In the phase of the studies emphasis was given to the effect of the presence of silica impurity on the toughness and fracture behavior of alumina samples.

  7. Negative compressibility observed in graphene containing resonant impurities

    SciTech Connect

    Chen, X. L.; Wang, L.; Li, W.; Wang, Y.; He, Y. H.; Wu, Z. F.; Han, Y.; Zhang, M. W.; Xiong, W.; Wang, N.

    2013-05-20

    We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of {+-}0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

  8. Competing Regimes of Motion of 1D Mobile Impurities

    NASA Astrophysics Data System (ADS)

    Kantian, A.; Schollwöck, U.; Giamarchi, T.

    2014-08-01

    We show that a distinguishable mobile impurity inside a one-dimensional many-body state at zero temperature generally does not behave like a quasiparticle. Instead, both the impurity dynamics as well as the ground state of the bath are fundamentally transformed by a diverging number of zero-energy excitations being generated, leading to what we call infrared-dominated (ID) dynamics. Combining analytics and density matrix renormalization group numerics, we provide a general formula for the power law governing ID dynamics at zero momentum, discuss a threshold beyond which quasiparticle dynamics may occur again, and study the competition between the ID and quasiparticle universality classes at larger impurity momenta.

  9. Negative compressibility observed in graphene containing resonant impurities

    NASA Astrophysics Data System (ADS)

    Chen, X. L.; Wang, L.; Li, W.; Wang, Y.; He, Y. H.; Wu, Z. F.; Han, Y.; Zhang, M. W.; Xiong, W.; Wang, N.

    2013-05-01

    We observed negative compressibility in monolayer graphene containing resonant impurities under different magnetic fields. Hydrogenous impurities were introduced into graphene by electron beam (e-beam) irradiation. Resonant states located in the energy region of ±0.04 eV around the charge neutrality point were probed in e-beam-irradiated graphene capacitors. Theoretical results based on tight-binding and Lifshitz models agreed well with experimental observations of graphene containing a low concentration of resonant impurities. The interaction between resonant states and Landau levels was detected by varying the applied magnetic field. The interaction mechanisms and enhancement of the negative compressibility in disordered graphene are discussed.

  10. Impurity profile of rifaximin produced in China.

    PubMed

    Liuchao; Maixi; Wangchao; Wan, Chunpeng

    2012-04-01

    Impurity profiles of rifaximin produced in China were investigated systematically by LCMS methods. Eleven impurities from the raw materials of rifaximin produced in China were detected. We adopted the Diagnostic fragment-ion-based extension strategy (DFIBES) for deducing the structure of unknown impurities. Impurity 1 was the 30-hydroxylated product of rifaximin. Impurity 2 was the 25-deacetyled rifaximin. Impurity 6 was the isomeride of rifaximin. Impurity 9 was rifamycin-O. PMID:22570932