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Sample records for doped layer final

  1. Doped biocompatible layers prepared by laser

    NASA Astrophysics Data System (ADS)

    Jelínek, M.; Weiserová, M.; Kocourek, T.; Jurek, K.; Strnad, J.

    2010-03-01

    The contribution deals with KrF laser synthesis and study of doped biocompatible materials with focus on diamond-like carbon (DLC) and hydroxyapatite (HA). Overview of materials used for dopation is given. Experimental results of study of HA layers doped with silver are presented. Films properties were characterized using profilometer, SEM, WDX, XRD and optical transmission. Content of silver in layers moved from 0.06 to 13.7 at %. The antibacterial properties of HA, silver and doped HA layers were studied in vivo using Escherichia coli cells.

  2. Nanozeolites doped photopolymer layers with reduced shrinkage.

    PubMed

    Moothanchery, Mohesh; Naydenova, Izabela; Mintova, Svetlana; Toal, Vincent

    2011-12-01

    An acrylamide based photopolymer doped with pure silica MFI-type zeolite (silicalite-1) nanoparticles has been characterized for holographic recording purposes. The concentrations of the silicalite-1 nanoparticles in the photopolymer layers were 1, 2.5, 5 and 7.5 wt. %. The inclusion of silicalite-1 nanoparticle in the photopolymer has resulted in an increase of the diffraction efficiency by up to 40%, and decrease of the shrinkage from 1.32% to 0.57%. The best results were obtained in layers doped with 5 wt. % silicalite-1 nanoparticles. PMID:22273971

  3. Organic doping of rotated double layer graphene

    NASA Astrophysics Data System (ADS)

    George, Lijin; Jaiswal, Manu

    2016-05-01

    Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

  4. Calcium-doped ceria/titanate tabular functional nanocomposite by layer-by-layer coating method

    SciTech Connect

    Liu, Xiang W.; Devaraju, M.K.; Yin, Shu; Sato, Tsugio

    2010-07-15

    Ca-doped ceria (CDC)/tabular titanate (K{sub 0.8}Li{sub 0.27}Ti{sub 1.73}O{sub 4}, TT) UV-shielding functional nanocomposite with fairly uniform CDC coating layers was prepared through a polyelectrolyte-associated layer-by-layer (LbL) coating method. TT with lepidocrocite-like layered structure was used as the substrate, poly (diallyldimethylammonium chloride) (PDDA) was used as a coupling agent, CDC nanoparticles were used as the main UV-shielding component. CDC/TT nanocomposites with various coating layers of CDC were obtained through a multistep coating process. The phases were studied by X-ray diffraction. The morphology and coating quality were studied by scanning electron microscopy and element mapping of energy dispersive X-ray analysis. The oxidation catalytic activity, UV-shielding ability and using comfort were characterized by Rancimat test, UV-vis spectra and dynamic friction test, respectively. CDC/TT nanocomposites with low oxidation catalytic activity, high UV-shielding ability and good using comfort were finally obtained. - Graphical abstract: Through the control of surface charge of particles calcium-doped ceria/titanate composites with low oxidation catalytic activity, higher UV-shielding ability and excellent comfort was obtained by a facile layer-by-layer coating method.

  5. Superconducting junctions from doped nonsuperconducting CuO2 layers

    NASA Astrophysics Data System (ADS)

    Loktev, V. M.; Pogorelov, Yu. G.

    2011-04-01

    The theoretical approach proposed recently to describe the redistribution of electronic charge in multilayered selectively doped systems is modified for a system with a finite number of layers. Special attention is payed to the case of a finite heterostructure made of copper-oxide layers which are all nonsuperconducting (including nonconducting) because the doping levels in them are beyond the characteristic interval for superconductivity. Specific finite structures and doping configurations are proposed to obtain atomically thin superconducting heterojunctions of different compositions.

  6. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  7. Improving the electrical properties of graphene layers by chemical doping

    NASA Astrophysics Data System (ADS)

    Farooq Khan, Muhammad; Zahir Iqbal, Muhammad; Waqas Iqbal, Muhammad; Eom, Jonghwa

    2014-10-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

  8. Doped LZO buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2010-03-23

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  9. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    PubMed

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. PMID:25584935

  10. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    NASA Astrophysics Data System (ADS)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  11. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  12. Verification of electron doping in single-layer graphene due to H{sub 2} exposure with thermoelectric power

    SciTech Connect

    Hong, Sung Ju; Kang, Hojin; Soler-Delgado, David; Kim, Kyung Ho; Park, Yung Woo E-mail: kbh37@incheon.ac.kr; Park, Min; Lee, Minwoo; Jeong, Dae Hong; Shin, Dong Seok; Kim, Byung Hoon E-mail: kbh37@incheon.ac.kr; Kubatkin, Sergey

    2015-04-06

    We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H{sub 2} molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

  13. Verification of electron doping in single-layer graphene due to H2 exposure with thermoelectric power

    NASA Astrophysics Data System (ADS)

    Hong, Sung Ju; Park, Min; Kang, Hojin; Lee, Minwoo; Soler-Delgado, David; Shin, Dong Seok; Kim, Kyung Ho; Kubatkin, Sergey; Jeong, Dae Hong; Park, Yung Woo; Kim, Byung Hoon

    2015-04-01

    We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H2 molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.

  14. Photoluminescence of Si-doped GaAs epitaxial layers

    SciTech Connect

    Yaremenko, N. G. Karachevtseva, M. V.; Strakhov, V. A.; Galiev, G. B.; Mokerov, V. G.

    2008-12-15

    The effect of arsenic pressure on the amphoteric behavior of Si during the growth of the Si-doped (100)-, (111)Ga-, and (111)As-oriented GaAs layers is studied by photoluminescence spectroscopy. The edge luminescence band is examined, and the concentration and the degree of compensation as functions of the arsenic pressure are determined. Nonstoichiometry defects in GaAs layers grown with a deficit and an excess of arsenic are studied. It is shown that the defects formed in the (111)Ga- and (111)As-oriented layers are different in nature.

  15. SNMS investigations of platinum-doped nanogranular tin dioxide layers

    NASA Astrophysics Data System (ADS)

    Schneider, T.; Sommer, M.; Goschnick, J.

    2005-09-01

    Thin platinum-doped nanogranular SnO 2 layers are examined because of its high gas sensitivity and fast gas response to be applied in gas sensor microarrays. The nanogranular metal oxide layers were prepared from a colloidal dispersion using spin coating on silicon substrates. Field emission scanning electron microscopy (FE-SEM) investigations showed quite homogeneous layers of 20 nm particles, containing a few holes of some micron width, probably due to bubbles introduced into the layer during wet deposition. Depth resolved analysis with secondary neutral mass spectrometry (SNMS) was employed to characterize the elemental content and depth distribution of the 20 nm particle layers. A platinum content of approx. 1 at.%, homogeneously spread throughout the particles was found, as well as carbon and chlorine residues of a few atomic percent enriched at the surface of the particles.

  16. Effect of interaction between periodic δ-doping in both well and barrier layers on modulation of superlattice band structure

    NASA Astrophysics Data System (ADS)

    Xu, Huaizhe; Yan, Qiqi; Wang, Tianmin

    2007-08-01

    The modulation of superlattice band structure via periodic δ-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the δ-function potentials in the well layers and those in the barrier layers on SL band structure have been revealed. It is pointed out that the energy dispersion relation Eq. (3) given in [G. Ihm, S.K. Noh, J.I. Lee, J.-S. Hwang, T.W. Kim, Phys. Rev. B 44 (1991) 6266] is an incomplete one, as the interaction between periodic δ-doping in both well and barrier layers had been overlooked. Finally, we have shown numerically that the electron states of a GaAs/Ga0.7Al0.3As superlattice can be altered more efficiently by intelligent tuning the two δ-doping's positions and heights.

  17. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer.

    PubMed

    Ciobanu, C S; Groza, A; Iconaru, S L; Popa, C L; Chapon, P; Chifiriuc, M C; Hristu, R; Stanciu, G A; Negrila, C C; Ghita, R V; Ganciu, M; Predoi, D

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC-American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  18. Antimicrobial Activity Evaluation on Silver Doped Hydroxyapatite/Polydimethylsiloxane Composite Layer

    PubMed Central

    Ciobanu, C. S.; Groza, A.; Iconaru, S. L.; Popa, C. L.; Chapon, P.; Chifiriuc, M. C.; Hristu, R.; Stanciu, G. A.; Negrila, C. C.; Ghita, R. V.; Ganciu, M.; Predoi, D.

    2015-01-01

    The goal of this study was the preparation, physicochemical characterization, and microbiological evaluation of novel hydroxyapatite doped with silver/polydimethylsiloxane (Ag:HAp-PDMS) composite layers. In the first stage, the deposition of polydimethylsiloxane (PDMS) polymer layer on commercially pure Si disks has been produced in atmospheric pressure corona discharges. Finally, the new silver doped hydroxyapatite/polydimethylsiloxane composite layer has been obtained by the thermal evaporation technique. The Ag:HAp-PDMS composite layers were characterized by various techniques, such as Scanning Electron Microscopy (SEM), Glow Discharge Optical Emission Spectroscopy (GDOES), and X-ray photoelectron spectroscopy (XPS). The antimicrobial activity of the Ag:HAp-PDMS composite layer was assessed against Candida albicans ATCC 10231 (ATCC—American Type Culture Collection) by culture based and confirmed by SEM and Confocal Laser Scanning Microscopy (CLSM) methods. This is the first study reporting the antimicrobial effect of the Ag:HAp-PDMS composite layer, which proved to be active against Candida albicans biofilm embedded cells. PMID:26504849

  19. Doping, adsorption, and polarity of atomic-layer materials: A predictive theory from systematic first-principles study

    NASA Astrophysics Data System (ADS)

    Saito, Susumu; Fujimoto, Yoshitaka; Koretsune, Takashi

    2015-03-01

    Based on the extensive first-principles electronic-structure study of various doped hexagonal boron-nitride (h-BN) atomic layers as well as that of various doped graphene and carbon nanotubes, we propose a simple but predictive theory of polarity in doped atomic-layer materials. We first report the electronic structure of the pristine h-BN, h-BN layers with B and B3N vacancies which have been experimentally produced and observed frequently, and doped h-BN layers, and show that both p-type and n-type h-BN layers can be produced in a variety of ways. We next review the electronic structure of doped graphene and carbon nanotubes and the effect of the H adsorption which can even change the polarity of the system. Finally we propose a simple but predictive theory which is based on the number of valence electrons of each system, and can explain the polarities of all the h-BN, graphene, and nanotube-based systems studied so far. Supported by MEXT 25107005 and 25104711, JSPS 22740252 and 26390062, and MEST TIES project.

  20. Impact of thin metal layer on the optical and electrical properties of indium-doped-tin oxide and aluminum-doped-zinc oxide layers

    NASA Astrophysics Data System (ADS)

    Kumar, Melvin David; Park, Yun Chang; Kim, Joondong

    2015-06-01

    The distinguished transparent conductive oxide (TCO) layers like indium-doped-tin oxide (ITO) and aluminum-doped-zinc oxide (AZO) layers were prepared in different combinations with and without thin Ni metal layer. The optical and electrical properties of prepared samples were analyzed and compared with the objective to understand the role and influence of the Ni layer in each TCO combination. The highest transmittance value of 91.49% was exhibited by prepared AZO layers. Even though if the transmittance of Ni inserting TCO layers was marginally reduced than that of the ordinary TCO samples, they exhibited balanced optical properties with enhanced electrical properties. Carrier concentration of indium doped tin-oxide and aluminum doped zinc oxide (ITO/AZO) bilayer sample is increased more than double the times when the Ni layer was inserted between ITO and AZO. Thin layer of Ni in between TCO layers reduced sheet resistance and offered substantial transmittance, so that the figure of merit (FOM) value of Ni embedding TCOs was greater than that of TCOs without Ni layer. The ITO/Ni/AZO combination provided optimum results in all the electrical properties. As compared to other TCO/metal combinations, the overall performance of ITO/Ni/AZO tri-layer combination was appreciable. These results show that the optical and electrical properties of TCO layers could be enhanced by inserting a Ni layer with optimum thickness in between them.

  1. Characterization of Yb:YAG active slab media based on a layered structure with different doping

    NASA Astrophysics Data System (ADS)

    Lapucci, A.; Ciofini, M.; Esposito, L.; Ferrara, P.; Gizzi, L. A.; Hostaša, J.; Labate, L.; Pirri, A.; Toci, G.; Vannini, M.

    2013-05-01

    Slabs with non-uniform doping distribution are studied with the aim of reducing thermal deformations in high-energy high-average-power Yb:YAG slab systems. We present a numerical analysis based on Finite Element Mesh (FEM) methods suitable to model non-uniform devices. The thermal variation of the refractive index, the end-faces deformations and the photo-elastic effect have been calculated in order to estimate the total thermal-lens effect. The stress distributions are also obtained. Some results of this numerical approach are compared to experimental thermal lens measurements in a simple geometry for both uniform and structured samples, in order to validate the numerical procedures. Finally we compare numerical simulations for different single- or double-sided pumping and cooling geometries. They show that structured slabs can reduce thermal gradients with respect to uniformly doped means with comparable absorption and geometry. This means a reduction of thermal lens effect and thus an increase of maximum allowed pump power loading. Previous literature reports some work made with structured slabs where higher doping was located in layers with lower pump radiation levels, in order to get a more uniform absorption. Interestingly our modeling indicates that reduced thermal effects are instead obtained when a higher doping is located close to the cooled surfaces.

  2. Ultraviolet light-emitting diodes with polarization-doped p-type layer

    NASA Astrophysics Data System (ADS)

    Hu, Wenxiao; Qin, Ping; Song, Weidong; Zhang, Chongzhen; Wang, Rupeng; Zhao, Liangliang; Xia, Chao; Yuan, Songyang; Yin, Yian; Li, Shuti

    2016-09-01

    We report ultraviolet light emitting diode (LEDs) with polarization doped p-type layer. Fabricated LEDs with polarization doped p-type layer exhibited reduced forward voltage and enhanced light output power, compared to those with traditional p-type AlGaN layer. The improvement is attributed to improved hole concentration and the smooth valence band by the polarization enhanced p-type doping. Our simulated results reveal that this p-type layer can further enhance the performance of ultraviolet LEDs by removing the electron blocking layer (EBL).

  3. Dielectric function for doped graphene layer with barium titanate

    NASA Astrophysics Data System (ADS)

    Martinez Ramos, Manuel; Garces Garcia, Eric; Magana, Fernado; Vazquez Fonseca, Gerardo Jorge

    2015-03-01

    The aim of our study is to calculate the dielectric function for a system formed with a graphene layer doped with barium titanate. Density functional theory, within the local density approximation, plane-waves and pseudopotentials scheme as implemented in Quantum Espresso suite of programs was used. We considered 128 carbon atoms with a barium titanate cluster of 11 molecules as unit cell with periodic conditions. The geometry optimization is achieved. Optimization of structural configuration is performed by relaxation of all atomic positions to minimize their total energies. Band structure, density of states and linear optical response (the imaginary part of dielectric tensor) were calculated. We thank Dirección General de Asuntos del Personal Académico de la Universidad Nacional Autónoma de México, partial financial support by Grant IN-106514 and we also thank Miztli Super-Computing center the technical assistance.

  4. Fe-doped InN layers grown by molecular beam epitaxy

    SciTech Connect

    Wang Xinqiang; Liu Shitao; Ma Dingyu; Zheng Xiantong; Chen Guang; Xu Fujun; Tang Ning; Shen Bo; Zhang Peng; Cao Xingzhong; Wang Baoyi; Huang Sen; Chen, Kevin J.; Zhou Shengqiang; Yoshikawa, Akihiko

    2012-10-22

    Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.

  5. Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

    NASA Astrophysics Data System (ADS)

    Park, Wug-Dong; Tanioka, Kenkichi

    2016-07-01

    Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current–voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current–voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

  6. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    NASA Astrophysics Data System (ADS)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  7. Layered manganites : magnetic structure at extreme doping levels.

    SciTech Connect

    Mitchell, J. F.

    1998-09-11

    We report powder neutron diffraction results on the crystal and magnetic structures of the bilayer Ruddlesden-Popper phase Sr{sub 3}Mn{sub 2}O{sub 7{minus}{delta}} ({delta} = 0.0, 0.45) and correlate these structures with their magnetic and transport properties. The {delta} = 0.45 compound contains a large number of oxygen vacancies that are disordered in the MnO{sub 2} planes. As a result of this disordered vacancy structure, Sr{sub 3}Mn{sub 2}O{sub 6.55} is a nonmagnetic insulator. Sr{sub 3}Mn{sub 2}O{sub 7.0} ({delta} = 0) is an antiferromagnetic insulator whose magnetic structure is related to that of the SrMnO{sub 3} perovskite. Comparison of this end-member compound to its doped congeners in the La{sub 2{minus}2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} series highlights the extreme sensitivity of magnetic structure to dopant concentration in these layered materials.

  8. Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon

    NASA Astrophysics Data System (ADS)

    Yamada, Michihiro; Sawano, Kentarou; Uematsu, Masashi; Shimizu, Yasuo; Inoue, Koji; Nagai, Yasuyoshi; Itoh, Kohei M.

    2016-03-01

    The successful formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) is reported. When the P δ-doping layers were grown by molecular beam epitaxy (MBE) directly on Ge wafers whose surfaces had residual carbon impurities, more than a half the phosphorus atoms were confined successfully within a few nm of the initial doping position even after the growth of Ge capping layers on the top. On the other hand, the same P layers grown on Ge buffer layers that had much less carbon showed significantly broadened P concentration profiles. Current-voltage characteristics of Au/Ti/Ge capping/P δ-doping/n-Ge structures having the abrupt P δ-doping layers with carbon assistance showed excellent ohmic behaviors when P doses were higher than 1 × 1014 cm-2 and the capping layer thickness was as thin as 5 nm. Therefore, the insertion of carbon around the P doping layer is a useful way of realizing ultrashallow junctions in Ge.

  9. Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

    SciTech Connect

    Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna

    2015-06-24

    Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance of 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.

  10. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, P.; Ruka, R.J.

    1995-02-14

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO{sub 3} particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO{sub 3} particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr{sub 2}O{sub 3} on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO{sub 3} layer coated with CaO and Cr{sub 2}O{sub 3} surface deposit at from about 1,000 C to 1,200 C to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO{sub 3} layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power. 5 figs.

  11. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    DOEpatents

    Singh, Prabhakar; Ruka, Roswell J.

    1995-01-01

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

  12. Origin of ferromagnetism enhancement in bi-layer chromium-doped indium zinc oxides

    SciTech Connect

    Hsu, C. Y.

    2012-08-06

    This work demonstrates that by controlling the rapid thermal annealing temperature, amorphous chromium-doped indium zinc oxide films develop an amorphous-crystalline bi-layer structure and show magnetization up to {approx}30 emu/cm{sup 3}. The crystalline layer arises from significant out-diffusion of Zn from surfaces, leading to a large difference in the Zn:In ratio in amorphous and crystalline layers. Doped Cr ions in amorphous and crystalline layers form different valence configurations, creating a charge reservoir which transfers electrons through amorphous-crystalline interfaces and in turn enhances ferromagnetism.

  13. Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

    NASA Astrophysics Data System (ADS)

    Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

    2015-11-01

    Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm-2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ~10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach.

  14. Atomic layer deposition of Al-doped ZnO thin films

    SciTech Connect

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  15. Metallic conduction induced by direct anion site doping in layered SnSe2

    NASA Astrophysics Data System (ADS)

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-Taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm-3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm-1 from ~1.7 S·cm-1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm-3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2.

  16. Metallic conduction induced by direct anion site doping in layered SnSe2.

    PubMed

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~10(20) cm(-3) is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S · cm(-1) from ~1.7 S · cm(-1) for non-doped SnSe2. When the carrier concentration exceeds ~10(19) cm(-3), the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  17. Metallic conduction induced by direct anion site doping in layered SnSe2

    PubMed Central

    Kim, Sang Il; Hwang, Sungwoo; Kim, Se Yun; Lee, Woo-Jin; Jung, Doh Won; Moon, Kyoung-Seok; Park, Hee Jung; Cho, Young-Jin; Cho, Yong-Hee; Kim, Jung-Hwa; Yun, Dong-Jin; Lee, Kyu Hyoung; Han, In-taek; Lee, Kimoon; Sohn, Yoonchul

    2016-01-01

    The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitutional dopant for increasing the carrier concentration. Here, we report the occurrence of metallic conduction in the layered dichalcogenide of SnSe2 by the direct Se-site doping with Cl as a shallow electron donor. The total carrier concentration up to ~1020 cm−3 is achieved by Cl substitutional doping, resulting in the improved conductivity value of ~170 S·cm−1 from ~1.7 S·cm−1 for non-doped SnSe2. When the carrier concentration exceeds ~1019 cm−3, the conduction mechanism is changed from hopping to degenerate conduction, exhibiting metal-insulator transition behavior. Detailed band structure calculation reveals that the hybridized s-p orbital from Sn 5s and Se 4p states is responsible for the degenerate metallic conduction in electron-doped SnSe2. PMID:26792630

  18. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    NASA Astrophysics Data System (ADS)

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  19. Defect formation and carrier doping in epitaxial films of the infinite layer compound

    SciTech Connect

    Feenstra, R.; Pennycook, S.J.; Chisholm, M.F.

    1996-02-01

    The correlation between defect formation and carrier doping in epitaxial films of the infinite layer compound SrCuO{sub 2} has been studied via molecular beam epitaxy controlled layer-by-layer growth experiments, chemically resolved scanning transmission electron microscopy, scanning tunneling microscopy, x-ray diffraction, electrical transport measurements, and post-growth oxidation-reduction annealing. Based on the complementary information provided by these experiments, it is concluded that the carrier doping is dominated by the formation of an electron-doped, Sr and O deficient matrix under mildly oxidizing growth conditions. Hole-doping is induced by extended defects containing excess Sr atoms and may lead to superconductivity after high-temperature oxidation.

  20. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  1. The doping of the polyimide alignment layer by semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Konshina, E. A.; Galin, I. F.; Gavrish, E. O.; Vakulin, D. A.

    2013-08-01

    We investigated the electro-optic properties of nematic liquid crystal cells oriented by polyimide (PI) layer doped with 3.5 nm semiconductor quantum dots (QDs) CdSe/ZnS at concentrations of 0.05 and 0.1 wt. %. It is shown that doping PI orienting layer by QDs reduces the permittivity and the phase delay, as well as increases the electrical resistance of the cells. Also we observed deceleration of liquid crystal (LC) optical response caused by the screening effect of the orienting layer.

  2. Layer-resolved photoemission tomography: The p -sexiphenyl bilayer upon Cs doping

    NASA Astrophysics Data System (ADS)

    Reinisch, E. M.; Puschnig, P.; Ules, T.; Ramsey, M. G.; Koller, G.

    2016-04-01

    The buried interface between a molecular thin film and the metal substrate is generally not accessible to the photoemission experiment. With the example of a sexiphenyl (6 P ) bilayer on Cu we show that photoemission tomography can be used to study the electronic level alignment and geometric structure, where it was possible to assign the observed orbital emissions to the individual layers. We further study the Cs doping of this bilayer. Initial Cs exposure leads to a doping of only the first interface layer, leaving the second layer unaffected except for a large energy shift. This result shows that it is in principle possible to chemically modify just the interface, which is important to issues like tuning of the energy level alignment and charge transfer to the interface layer. Upon saturating the film with Cs, photoemission tomography shows a complete doping (6 p4 - ) of the bilayer, with the molecular geometry changing such that the spectra become dominated by σ -orbital emissions.

  3. Application of N- and B-doped CVD diamond layers for cyclic voltammetry measurements

    NASA Astrophysics Data System (ADS)

    Torz-Piotrowska, R.; Wrzyszczyński, A.; Paprocki, K.; Staryga, E.

    2009-10-01

    Conductive polycrystalline diamond layers prepared by the CVD process have received attention from electrochemists owing to such superior electrochemical properties as the wide potential window, the very low background current, the stability of chemical and physical properties. In this paper, the cyclic voltammetry application using N- and B-doped diamond electrodes was studied. Diamond layers, doped with boron and nitrogen, were synthesized on a silicon substrate in a hot-filament CVD reactor. The obtained diamond layers were characterized using Raman spectroscopy and scanning electron microscopy (SEM). The electrochemical properties of diamond layers were measured in KCl and NaCl basic solutions to gain knowledge about their potential application as an electrode material. It was found that boron doped diamond electrodes showed potential windows up to about 7 V which were almost twice wider than those observed for conventional Pt electrodes.

  4. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  5. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

    DOEpatents

    Yang, Liyou

    1993-10-26

    A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

  6. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    NASA Astrophysics Data System (ADS)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  7. Theoretical investigation of superconductivity in doped fullerenes. Final report

    SciTech Connect

    Jishi, R.A.

    1995-03-01

    The aim of the research the authors are conducting is to understand the phenomenon of superconductivity in the fullerene system. Towards achieving this goal they have conducted a series of studies and have published several papers quite recently. They have developed a force-constant model for the C60 molecule which accounts for all measured frequencies in C60. The model employs four bond-stretching and four angle-bending force constants that were doped to reproduce the correct values of the frequencies of the Raman-active vibrational modes. The model was successfully applied to higher fullerenes, such as C70 and the effect of doping by alkali metal atoms on the phonon modes in C60 and in C70 was considered. The study of the phonon spectrum in doped C60 and doped C70 is an important step in view of the fact that while doped C60 is superconducting, doped C70 is not. The studies the authors have carried out, combined with studies on the electronic states in doped C70, could elucidate the difference in the electrical properties between these two materials.

  8. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    SciTech Connect

    Liang, Xianqing; Zhong, Jun; Shi, Yalin; Guo, Jin; Huang, Guolong; Hong, Caihao; Zhao, Yidong

    2015-01-15

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications.

  9. Numerical simulation on white OLEDs with dotted-line doped emitting layers

    NASA Astrophysics Data System (ADS)

    Chang, Shu-Hsuan; Wen, Chien-Yang; Huang, Yi-Hsiang; Kuo, Yen-Kuang

    2009-02-01

    White organic light-emitting diodes (OLEDs) have attracted great attention recently. In this study, high-efficiency white organic light-emitting diodes with dotted-line doped layers are numerically investigated with the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. The APSYS simulation program, developed by Crosslight Inc., is capable of dealing with the optical, electrical, and thermal characteristics of OLED devices. To approach the real situation, the OLED device fabricated by Park et al. (Current Applied Physics 1, 116, 2001) was first modeled by adjusting the appropriate physical parameters. Based on this OLED structure, a new structure of ITO/α-NPD (40 nm)/Alq3:DCJTB (30 nm)/Alq3 (30 nm)/Mg:Ag emitting quasi-white light was then proposed. Then, the single layer of Alq3:DCJTB was replaced by multi-(Alq3:DCJTB/Alq3)n layers, which are the so-called dotted-line doped layers (see, e.g., paper by Han et al., Solid State Communications 141, 332, 2007), to further improve the optical performance. The optical properties of the white OLEDs with different pairs of (Alq3:DCJTB/Alq3)n dotted-line doped layers are investigated and discussed in detail. Optimization of the proposed quasi-white OLED structures is attempted. The simulation results indicate that the OLED with dotted-line doped layers has higher radiative recombination rate and better emission efficiency than that with a single Alq3:DCJTB layer. The physical origin of the improved optical performance for the OLED with dotted-line doped layers could be due to the increased electrons and holes at the interfaces between the Alq3:DCJTB and Alq3 layers, which thus results in higher radiative recombination rate and better emission efficiency.

  10. Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide

    SciTech Connect

    Gong, Yongji; Liu, Zheng; Lupini, Andrew R; Lin, Junhao; Pantelides, Sokrates T; Pennycook, Stephen J; Zhou, Wu; Ajayan, Pullikel M

    2014-01-01

    Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.

  11. Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001)

    NASA Astrophysics Data System (ADS)

    Reusch, T. C. G.; Goh, K. E. J.; Pok, W.; Lo, W.-C. N.; McKibbin, S. R.; Simmons, M. Y.

    2008-09-01

    We present a combined scanning tunneling microscopy (STM) and low-temperature magnetotransport study of Si:P δ-doped layers on vicinal Si(001) substrates. The substrates were misoriented 4° toward [110] resulting in a high step density on the starting growth surface. Atomically resolved STM was used to study all stages of the fabrication. We find only a weak influence of the high step density and discuss the implications for the fabrication δ-doped layers and planar nanoscale Si:P devices by scanning tunneling lithography.

  12. Spin tuning of electron-doped metal-phthalocyanine layers.

    PubMed

    Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

    2014-04-01

    The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state. PMID:24635343

  13. Stability of few layer graphene films doped with gold (III) chloride

    NASA Astrophysics Data System (ADS)

    Abdullah-Al-Galib, Mir; Hou, Bo; Shahriad, Tahmeed; Zivanovic, Sandra; Radadia, Adarsh D.

    2016-03-01

    In this paper we study the stability of few layer graphene (5-7 layers) doped with gold nanoparticles through spin coating of a gold (III) chloride solution. Specifically sheet resistance, optical transmittance and surface morphology were monitored over a period of four weeks. Through scanning electron microscopy we observed that the gold nanoparticles of 29.1 ± 1.3 nm diameters, which were formed on surfaces freshly doped with a 20 mM solution, agglomerate and fuse over the period of four weeks into larger particles of 50-110 nm diameters. At the end of four weeks of aging, regardless in air or vacuum, the optical transmittance at 550 nm for the doped samples resumed a value close to that of undoped samples. During these four weeks, the sheet resistances of the samples doped with 20 mM gold chloride also increased from 130 ohm/sq to 300 ohm/sq, but stayed comparable to indium tin oxide. In summary, despite the instability of doped FLG surfaces obtained using gold (III) chloride solutions, this study warrants the use of doped FLG films for building the next generation photovoltaics.

  14. Window layer with p doped silicon oxide for high Voc thin-film silicon n-i-p solar cells

    NASA Astrophysics Data System (ADS)

    Biron, Rémi; Pahud, Celine; Haug, Franz-Josef; Escarré, Jordi; Söderström, Karin; Ballif, Christophe

    2011-12-01

    We investigate the influence of the oxygen content in boron-doped nanocrystalline silicon oxide films (p-nc-SiOx) and introduce this material as window layer in n-i-p solar cells. The dependence of both, optical and electrical properties on the oxygen content is consistent with a bi-phase model which describes the p-nc-SiOx material as a mixture of an oxygen-rich (O-rich) phase and a silicon-rich (Si-rich) phase. We observe that increasing the oxygen content enhances the optical gap E04 while deteriorating the activation energy and the planar conductivity. These trends are ascribed to a higher volume fraction of the O-rich phase. Incorporated into n-i-p a-Si:H cells, p-nc-SiOx layers with moderate oxygen content yield open circuit voltage (Voc) up to 945 mV, which corresponds to a relative gain of 11% compared to an oxygen-free p-layer. As a similar gain is obtained on planar and on textured substrates, we attribute the increase in Voc to the higher work function of the p-nc-SiOx layer made possible by its wider band gap. These results are attained without changing the dilution ratio of the 250 nm thick intrinsic layer. We also observe an enhancement of 0.6 mA cm-2 in short circuit current density in the short wavelengths due to the higher transparency of the p-nc-SiOx layer. Finally, an initial efficiency of 9.9% for a single junction 250 nm a-Si:H n-i-p solar cell on plastic foil is achieved with the optimization of the p layer thickness, the doping ratio of the front transparent conductive oxide, and the optical properties of the back reflector.

  15. Performance enhancement of planar heterojunction perovskite solar cells by n-doping of the electron transporting layer.

    PubMed

    Kim, Shin Sung; Bae, Seunghwan; Jo, Won Ho

    2015-12-21

    Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm(-2) as compared to the devices with an un-doped PCBM layer. PMID:26466302

  16. Highly enhanced phosphorescent organic light-emitting diodes with cesium fluoride doped electron injection layer

    NASA Astrophysics Data System (ADS)

    Han, Jongseok; Kwon, Yongwon; Sohn, Jiho; Lee, Changhee

    2015-09-01

    We systematically investigate doping effect of cesium fluoride (CsF) on the device performance of organic light-emitting diodes (OLEDs). CsF can be used as a stable n-type dopant due to its low chemical reactivity and simple deposition process. We have observed that CsF could be employed as an effective n-type dopant in thin films of 3,3'-[5'- [3-(3-Pyridinyl)phenyl][1,1':3',1''-terphenyl]-3,3''-diyl]bispyridine (TmPyPB) through experimental studies of optical absorption spectroscopy, and X-ray photoelectron spectroscopy (XPS) with different doping concentration. In addition, we measured bulk resistance using impedance spectroscopy in an electron-only devices (EODs) with CsF-doped TmPyPB. As the doping ratio of the CsF increases, the current densities of EOD increase and the bulk resistances of the CsF-doped layer decrease. Owing to high electrical property of CsF-doped TmPyPB in EIL, green phosphorescent OLEDs showed significantly lower voltage and considerably enhanced efficiency. The device with 30 vol% CsF-doped TmPyPB showed power efficiency of 28.1 lm/W at 1000 cd/m2, whereas the device with pristine TmPyPB exhibited 13.8 lm/W. From these results, CsF-doped TmPyPB as EIL can reduce bulk resistance of EIL and improve the electron-injection and transport properties of electron-transport layer. Therefore, we can utilize CsF as an efficient n-type dopant in EIL of OLEDs.

  17. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  18. Quasi-particle band structure of potassium-doped few-layer black phosphorus with GW approximation

    NASA Astrophysics Data System (ADS)

    Kim, Han-Gyu; Baik, Seung Su; Choi, Hyoung Joon

    We calculate the quasi-particle band structure of pristine and potassium-doped black phosphorus (BP) by using the GW approximation. We obtain band gaps of pristine bulk and few-layer BP and compare them with the result of the density functional calculations and experimental measurements. For potassium-doped cases, we calculate the electronic band structure of potassium-doped few-layer BPs with various doping densities. We obtain the critical doping density for the band-gap closing, and the energy-band dispersions when the band gap is inverted. We discuss Dirac semimetal properties of doped few-layer BPs obtained by the GW approximation. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2015-C3-039).

  19. Lanthanide-doped titanium dioxide layers as photocatalysts

    NASA Astrophysics Data System (ADS)

    Uzunova-Bujnova, M.; Todorovska, R.; Dimitrov, D.; Todorovsky, D.

    2008-09-01

    Films (˜0.5 mg/cm 2) from TiO 2 doped with 1-10 mol% Ln 3+ (Ln = La or Gd) are deposited on different types of substrates by spray-pyrolysis using ethylene glycol solutions of Ti 4+-Ln 3+ citric complexes as starting material and O 2 as a carrier gas. The films are post-deposition heated at 500 °C. Their phase composition, crystal structure, morphology, sorption ability and photocatalytic activity are studied. Aqueous solution of methylene blue is applied as a model pollutant. A film with 5 mol% La on Ti-coated stainless steel substrate shows significantly higher photocatalytic activity than the best performing samples produced from commercially available titania.

  20. Onset of two-dimensional superconductivity in space charge doped few-layer molybdenum disulfide

    PubMed Central

    Biscaras, Johan; Chen, Zhesheng; Paradisi, Andrea; Shukla, Abhay

    2015-01-01

    Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping density of 4 × 1014 cm−2 in few-layer MoS2 on glass substrates. With increasing carrier density we first induce an insulator to metal transition and subsequently an incomplete metal to superconductor transition in MoS2 with critical temperature ≈10 K. Contrary to earlier reports, after the onset of superconductivity, the superconducting transition temperature does not depend on the carrier density. Our doping method and the results we obtain in MoS2 for samples as thin as bilayers indicates the potential of this approach. PMID:26525386

  1. Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Gamarra, Piero; Lacam, Cedric; Tordjman, Maurice; Splettstösser, Jörg; Schauwecker, Bernd; di Forte-Poisson, Marie-Antoinette

    2015-03-01

    This work reports on the optimisation of carbon doping GaN buffer layer (BL) for AlGaN/GaN HEMT (high electron mobility transistor) structures, grown by low pressure metal-organic vapour phase epitaxy (LP-MOVPE) on 3 in. SiC semi-insulating substrates. The incorporation of carbon impurities in GaN is studied as a function of the growth conditions, without using an external carbon source. We observed that the C incorporation can be effectively controlled over more than one order of magnitude by tuning the reactor pressure and the growth temperature, without degradation of the crystalline properties of the GaN layers. HEMT structures with a specific barrier design were grown with different carbon dopings in the GaN BL and processed into transistors to evaluate the impact of the BL doping on the device performances. A significant improvement of the HEMT drain leakage current and of the breakdown voltage was obtained by increasing the carbon incorporation in the GaN BL. The RF performances of the devices show a trade-off between leakage currents and trapping phenomena which are enhanced by the use of carbon doping, limiting the delivered output power. An output power as high as 6.5 W/mm with a Power Added Efficiency of 70% has been achieved at 2 GHz by the HEMT structures with the lowest carbon doping in the BL.

  2. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  3. Incommensurate superstructure in heavily doped fullerene layer on Bi/Si(111) surface

    NASA Astrophysics Data System (ADS)

    Gruznev, D. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Matetskiy, A. V.; Zotov, A. V.; Saranin, A. A.

    2015-08-01

    Cs adsorption onto the C60-covered Si(111)-β- √{ 3 } × √{ 3 } -Bi reconstruction has been studied by means of scanning tunneling microscopy and photoelectron spectroscopy. Unexpected increase in apparent size of every second C60 molecule has been detected, hereupon the close packed molecular array almost doubles its periodicity. The change affects only the fullerenes that are in direct contact with the metal-induced reconstruction and takes no place already in the second layer. Photoelectron studies have revealed that this incommensurate "2 × 2" superstructure of a heavily doped C60 monolayer remains in an insulating state regardless of doping level.

  4. Graphene/ferroelectrics/graphene hybrid structure: Asymmetric doping of graphene layers

    SciTech Connect

    Duong, Dinh Loc; Lee, Si Young; Kim, Seong Kyu; Lee, Young Hee

    2015-06-15

    We report graphene/ferroelectric/graphene hybrid structure to demonstrate an asymmetrical doping in two graphene layers, one side with electrons and another side with holes. Two ferroelectrics, a poly(vinylidenefluoride) (PVDF) and a hydrofluorinated graphene, were used to demonstrate the concept with density functional calculations, revealing the Fermi level shift of 0.35 and 0.75 eV, respectively. This concept was confirmed by Raman spectroscopy using graphene/poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE))/graphene hybrid, which can easily form β-phase close to our simulation model. G-band peak position was downshifted for electron doping and upshifted for hole doping. This hybrid structure opens an opportunity to study bilayer graphene system with a controllable thickness for a wide range of high carrier concentration.

  5. (abstract) All Epitaxial Edge-geometry SNS Devices with Doped PBCO and YBCO Normal Layers

    NASA Technical Reports Server (NTRS)

    Barner, J. B.; Hunt, B. D.; Foote, M. C.

    1995-01-01

    We will present our results on tapered-edge-geometry SNS weak link fabricated from c-axis oriented base-, counterelectrode and normal layers using a variety of processing conditions. To date, we have employed a variety of different normal materials (Co-doped YBCO, Y-doped PBCO, Ca-doped PBCO). We have been examining the junction fabrication process in detail and we will present our methods. In particular, we have been examining both epitaxial and non-epitaxial milling mask overlayers and we will present a comparison of both methods. These devices behave similar to the expectations of the resisively shunted junction model and conventional SNS proximity effect models but with some differences which will be discussed. We will present the detailed systematics of our junctions including device parameters versus temperature, rf and dc magnetic response for the various processing conditions.

  6. P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yokoyama, Haruki; Hoshi, Takuya

    2015-01-01

    The electrical characteristics of Si-doped GaAsSb layers grown at various growth temperatures from 530 to 630 °C by metalorganic chemical vapor deposition (MOCVD), are investigated. When the substrate temperature is 530 °C, the conductivity of Si-doped GaAsSb layers is n-type. In contrast, Si-doped GaAsSb layers grown at higher temperature (580 °C) show p-type conductivity. Moreover, the p-type carrier concentration in these layers increases proportionally to the increase of the disilane (Si2H6) flow rate. This is the first time that p-type doping into GaAsSb layers has been achieved by MOCVD using Si as a dopant.

  7. Macroporous p-GaP Photocathodes Prepared by Anodic Etching and Atomic Layer Deposition Doping.

    PubMed

    Lee, Sudarat; Bielinski, Ashley R; Fahrenkrug, Eli; Dasgupta, Neil P; Maldonado, Stephen

    2016-06-29

    P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by anodic etching of an undoped, intrinsically n-type GaP(100) wafer and followed by drive-in doping with Zn from conformal ZnO films prepared by atomic layer deposition (ALD). Specifically, 30 nm ALD ZnO films were coated on GaP macroporous films and then annealed at T = 650 °C for various times to diffuse Zn in GaP. Under 100 mW cm(-2) white light illumination, the resulting Zn-doped macroporous GaP consistently exhibit strong cathodic photocurrent when measured in aqueous electrolyte containing methyl viologen. Wavelength-dependent photoresponse measurements of the Zn-doped macroporous GaP revealed enhanced collection efficiency at wavelengths longer than 460 nm, indicating that the ALD doping step rendered the entire material p-type and imparted the ability to sustain a strong internal electric field that preferentially drove photogenerated electrons to the GaP/electrolyte interface. Collectively, this work presents a doping strategy with a potentially high degree of controllability for high-aspect ratio III-V materials, where the ZnO ALD film is a practical dopant source for Zn. PMID:27254534

  8. Self-Doping, O2-Stable, n-Type Interfacial Layer for Organic Electronics

    SciTech Connect

    Reilly, T. H. III; Hains, A. W.; Chen, H. Y.; Gregg, B. A.

    2012-04-01

    Solid films of a water-soluble dicationic perylene diimide salt, perylene bis(2-ethyltrimethylammonium hydroxide imide), Petma{sup +}OH{sup -}, are strongly doped n-type by dehydration and reversibly de-doped by hydration. The hydrated films consist almost entirely of the neutral perylene diimide, PDI, while the dehydrated films contain {approx}50% PDI anions. The conductivity increases by five orders of magnitude upon dehydration, probably limited by film roughness, while the work function decreases by 0.74 V, consistent with an n-type doping density increase of {approx}12 orders of magnitude. Remarkably, the PDI anions are stable in dry air up to 120 C. The work function of the doped film, {phi} (3.96 V vs. vacuum), is unusually negative for an O{sub 2}-stable contact. Petma{sup +} OH{sup -} is also characterized as an interfacial layer, IFL, in two different types of organic photovoltaic cells. Results are comparable to state of the art cesium carbonate IFLs, but may improve if film morphology can be better controlled. The films are stable and reversible over many months in air and light. The mechanism of this unusual self-doping process may involve the change in relative potentials of the ions in the film caused by their deshielding and compaction as water is removed, leading to charge transfer when dry.

  9. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    DOE PAGESBeta

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d,more » electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.« less

  10. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  11. Impact of the modulation doping layer on the ν = 5/2 anisotropy

    SciTech Connect

    Shi, X.; Pan, W.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

    2015-03-30

    We have carried out a systematic study of the tilted magnetic field induced anisotropy at the Landau level filling factor ν = 5/2 in a series of high quality GaAs quantum wells, where the setback distance (d) between the modulation doping layer and the GaAs quantum well is varied from 33 to 164 nm. We have observed that in the sample of the smallest d, electronic transport is anisotropic when the in-plane magnetic field (Bip) is parallel to the [1–10] crystallographic direction, but remains more or less isotropic when Bip // [110]. In contrast, in the sample of largest d, electronic transport is anisotropic in both crystallographic directions. Lastly, our results clearly show that the modulation doping layer plays an important role in the tilted field induced ν = 5/2 anisotropy.

  12. Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

    DOE PAGESBeta

    Wang, Qi; Bi, Cheng; Huang, Jinsong

    2015-05-06

    We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

  13. Conductive surface modification of LiFePO4 with nitrogen doped carbon layers for lithium-ion batteries

    SciTech Connect

    Yoon, Sukeun; Liao, Chen; Sun, Xiao-Guang; Bridges, Craig A; Unocic, Raymond R; Nanda, Jagjit; Dai, Sheng; Paranthaman, Mariappan Parans

    2012-01-01

    The LiFePO4 rod surface modified with nitrogen doped carbon layer has been prepared using hydrothermal processing followed by post-annealing in the presence of an ionic liquid. The coated LiFePO4 rod exhibits good capacity retention and high rate capability as the nitrogen doped carbon improves conductivity and prevents aggregation of the rod during cycling.

  14. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  15. Density of states determination in organic donor-acceptor blend layers enabled by molecular doping

    NASA Astrophysics Data System (ADS)

    Fischer, Janine; Ray, Debdutta; Kleemann, Hans; Pahner, Paul; Schwarze, Martin; Koerner, Christian; Vandewal, Koen; Leo, Karl

    2015-06-01

    Charge carrier transport is a key parameter determining the efficiency of organic solar cells, and is closely related to the density of free and trapped states. For trap characterization, impedance spectroscopy is a suitable, non-invasive method, applicable to complete organic semiconductor devices. In order to contribute to the capacitive signal, the traps must be filled with charge carriers. Typically, trap filling is achieved by illuminating the device or by injecting charge carriers through application of a forward bias voltage. However, in both cases, the exact number of charge carriers in the device is not known and depends strongly on the measurement conditions. Here, hole trap states of the model blend layer ZnPc:C60 are filled by weak p-doping, enabling trap characterization in a blend layer at a controlled hole density. We evaluate impedance spectra at different temperatures in order to determine the density of occupied states (DOOS) directly from the capacitance-frequency spectra by assuming a simple energy diagram. The reconstructed DOOS distribution is analyzed at different doping concentrations and device thicknesses and compared to thermally stimulated current measurements performed on the same devices. In both methods, a pronounced Gaussian peak at about 0.4 eV below the transport level is found as well as deep, exponential tail states, providing a deeper insight into the density of states distribution of this donor-acceptor blend layer. Additionally, the effect of doping-induced trap filling on the solar cell characteristics is studied in these devices.

  16. Resonant doped bismuth telluride for reliable, efficient cryocooling. Final report

    SciTech Connect

    Volckmann, E.H.

    1992-10-16

    Today's cryogenic coolers that operate down to 77 K suffer from several problems. Their most serious difficulties are significant noise levels, excessive vibration and poor reliability. Thermoelectric coolers do not suffer any of these concerns. However, thermoelectric coolers are not presently capable of cooling to temperatures as low as 77 K. Development of thermoelectric materials capable of extending cooler performance to these temperatures would open up potential applications such as cryogenic cooling of infrared detectors and CCDs as well as removing heat from Joule-Thomson refrigerators. Presently, the best thermoelectric materials over the temperature range 200 K to 450 K and the most practical below 200 K, are solid solutions of Bi2Te3, Sb2Te3 and/or Bi2Se3. These alloys yield a peak dimensionless figure of merit, ZT, of approximately one near 300 K. These materials often require doping in order to optimize the carrier concentration and figure of merit, Z. As reported by Ravich and Vedernikov, certain impurities can also be added to improve thermoelectric properties through a selective scattering mechanism.

  17. Fabrication and characterization of perovskite-type solar cells with Nb-doped TiO2 layers

    NASA Astrophysics Data System (ADS)

    Saito, Jo; Oku, Takeo; Suzuki, Atsushi; Akiyama, Tsuyoshi

    2016-02-01

    Organic-inorganic hybrid heterojunction solar cells containing perovskite CH3NH3PbI3 using Nb-doped TiO2 as an electron-transporting layer were fabricated and characterized. Nb-doped TiO2 layer showed an improvement of the short-circuit current density and power conversion efficiency using Ti0.95Nb0.05O2.

  18. Electrical conductivity of reconstructed Si(111) surface with sodium-doped C{sub 60} layers

    SciTech Connect

    Tsukanov, D. A. Saranin, A. A.; Ryzhkova, M. V.; Borisenko, E. A.; Zotov, A. V.

    2015-01-05

    Electrical conductance of sodium-doped C{sub 60} ultra-thin layers (1–6 monolayers) grown on the Na-adsorbed Si(111)√3 × √3-Au surface has been studied in situ by four-point probe technique, combined with low-energy electron diffraction observations. Evidence of conductance channel formation through the C{sub 60} ultrathin layer is demonstrated as a result of Na dosing of 3 and 6 monolayers thick C{sub 60} layers. The observed changes in surface conductivity can be attributed to the formation of fulleride-like NaC{sub 60} and Na{sub 2}C{sub 60} compound layers.

  19. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping

    PubMed Central

    2014-01-01

    In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 1013 cm-2, resistivity at 4.6 × 10-3 Ω∙cm, and Hall mobility at 14.6 cm2/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm2/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm2/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs. PMID:25435832

  20. Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

    NASA Astrophysics Data System (ADS)

    Leem, Dong-Seok; Park, Hyung-Dol; Kang, Jae-Wook; Lee, Jae-Hyun; Kim, Ji Whan; Kim, Jang-Joo

    2007-07-01

    The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N ,N'-diphenyl-N ,N'-bis (1,1'-biphenyl)-4,4'-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2-5.4V and power efficiency of 2.2-2.3lm/W at 20mA/cm2, which is significantly improved compared to those (7.1V and 2.0lm/W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices.

  1. Eu-doped Mg-Al layered double hydroxide as a responsive fluorescent material and its interaction with glutamic acid

    NASA Astrophysics Data System (ADS)

    Chen, Yufeng; Li, Fei; Yu, Gensheng; Wei, Junchao

    2012-10-01

    The paper describes a study on the fluorescence of a Eu-doped Mg-Al layered double hydroxide (Eu-doped LDH) response to glutamic acid (Glu). Various characterizations (UV-Vis transmittance, TG-DTA and IR-spectrum) indicated that there is an interaction between the Eu-doped LDH and Glu. Fluorescent study was found that the red emissions resulted from 5D0-7FJ transition (J = 1, 2) of Eu3+ markedly decreased, while the blue emission at 440 nm contributed to Glu shifted to low energy after the addition of Glu to the Eu-doped LDH. The fluorescent changes may be relevant to the hydrogen-bond interaction between the Eu-doped LDH and Glu, and the mechanism of the interaction between Eu-doped LDH and Glu was discussed.

  2. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    NASA Astrophysics Data System (ADS)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  3. Defect formation in epitaxial layers of doped with cd and sn

    SciTech Connect

    Arbenina, V.V.; Skakovskii, S.I.; Voloshin, A.E.

    1986-10-01

    The authors consider the dislocation structure and impurity-atom distributions in GaSb epitaxial layers doped with Cd and Sn and grown by liquid-phase epitaxy (LPE) on undoped gallium antimonide substrates. A horizontal apparatus was used to carry out epitaxy. The samples were investigated by x-ray topography and double-crystal spectroscopy. The concentration and mobility of the charge carriers were determined by Hall-effect measurements using the Van der Pauw method. It is shown that in the case of double doping of gallium antimonide by cadmium and tin the dislocation density may decrease by an order of magnitude compared to values obtained when these impurities are individually added. A possible distribution mechanism of Cd and Sn atoms in the GaSb lattice is presented.

  4. Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yeh, Tung‑Ti; Wang, Jr‑Hau; Hsieh, Tsung‑Eong; Shieh, Han‑Ping D.

    2006-02-01

    In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (Pr) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at Pr=4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 105 readout cycles.

  5. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Moghaddam, Saeed; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.

    2014-08-18

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  6. The effects of layering in ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  7. First-principles study of the noble metal-doped BN layer

    SciTech Connect

    Zhou, Yungang; Yang, Ping; Sun, Xin; Wang, Zhiguo; Zu, Xiaotao T.; Gao, Fei

    2011-04-18

    Intriguing electronic and magnetic properties of BN layer with noble metal (Pd, Pt, Ag and Au) doping are obtained by first-principles calculations. Adsorbed Pd (or Pt) reduces the band gap of BN sheet owing to the induction of impurity states. The unpaired electrons in the Ag (or Au)-adsorbed and the Pd (or Pt)-substituted BN layers are polarized, and thus exhibit a magnetic moment of 1.0 µB, leading to these BN configurations to be magnetic semiconductors. The half-metallic feature of the Ag-substituted BN layer, along with the delocalization of spin states, renders this configuration an excellent spin filter material. Thus, these findings offer a unique opportunity for developing BN-based nanoscale devices.

  8. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III; James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  9. Improving the performance of perovskite solar cells with glycerol-doped PEDOT:PSS buffer layer

    NASA Astrophysics Data System (ADS)

    Jian-Feng, Li; Chuang, Zhao; Heng, Zhang; Jun-Feng, Tong; Peng, Zhang; Chun-Yan, Yang; Yang-Jun, Xia; Duo-Wang, Fan

    2016-02-01

    In this paper, we investigate the effects of glycerol doping on transmittance, conductivity and surface morphology of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate)) (PEDOT:PSS) and its influence on the performance of perovskite solar cells. . The conductivity of PEDOT:PSS is improved obviously by doping glycerol. The maximum of the conductivity is 0.89 S/cm when the doping concentration reaches 6 wt%, which increases about 127 times compared with undoped. The perovskite solar cells are fabricated with a configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/PC61BM/Al, where PEDOT:PSS and PC61BM are used as hole and electron transport layers, respectively. The results show an improvement of hole charge transport as well as an increase of short-circuit current density and a reduction of series resistance, owing to the higher conductivity of the doped PEDOT:PSS. Consequently, it improves the whole performance of perovskite solar cell. The power conversion efficiency (PCE) of the device is improved from 8.57% to 11.03% under AM 1.5 G (100 mW/cm2 illumination) after the buffer layer has been modified. Project supported by the National Natural Science Foundation of China (Grant Nos. 61264002, 61166002, 91333206, and 51463011), the Natural Science Foundation of Gansu Province, China (Grant No. 1308RJZA159), the New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0840), the Research Project of Graduate Teacher of Gansu Province, China (Grant No. 2014A-0042), and the Postdoctoral Science Foundation from Lanzhou Jiaotong University, China.

  10. Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy

    NASA Astrophysics Data System (ADS)

    Abroug, S.; Saadallah, F.; Genty, F.; Yacoubi, N.

    2009-11-01

    The aim of this work is to investigate the influence of Si-doping on the optical, thermal and electrical properties of GaSb epitaxial layers. Such an influence was quantified through photoluminescence (PL), mirage effect (photothermal spectroscopy) and Hall effect measurements. Several GaSb samples, grown by Molecular Beam Epitaxy (MBE) on (100)-oriented GaAs semiinsulating substrates, with different Si-doping levels ranging from 4.95 × 1016at .cm-3 up to 8.11.1019 at .cm-3 were tested. As a comparison, the same measurements were also performed on a GaSb non intentionally doped layer. The Hall effect data shows a monotonic decrease in carrier mobility when the hole concentration increase. The effect of band-to-band, band-impurity transitions on the PL gap E0 and the influence of high impurity concentration on the PL and absorption spectra have been also studied. Finally, the optical absorption changes induced by Si-doping on GaSb samples were investigated by photothermal deflection. It was shown that this technique allows a very precise deduction of the real interband gap energy of a semiconductor material as GaSb. Thermal conductivities were also deduced from the photothermal deflection measurements. The found values are very low due to the thermal resistivity of the layer-substrate interface but also due to the lattice-mismatch between GaSb epilayers and the GaAs substrate. However, the contribution of the free carriers to the thermal conductivity, with a high p-doping level (p > 1019cm-3), could be highlighted.

  11. Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2.

    PubMed

    Kaushik, Naveen; Karmakar, Debjani; Nipane, Ankur; Karande, Shruti; Lodha, Saurabh

    2016-01-13

    We demonstrate a low and constant effective Schottky barrier height (ΦB ∼ 40 meV) irrespective of the metal work function by introducing an ultrathin TiO2 ALD interfacial layer between various metals (Ti, Ni, Au, and Pd) and MoS2. Transmission line method devices with and without the contact TiO2 interfacial layer on the same MoS2 flake demonstrate reduced (24×) contact resistance (RC) in the presence of TiO2. The insertion of TiO2 at the source-drain contact interface results in significant improvement in the on-current and field effect mobility (up to 10×). The reduction in RC and ΦB has been explained through interfacial doping of MoS2 and validated by first-principles calculations, which indicate metallic behavior of the TiO2-MoS2 interface. Consistent with DFT results of interfacial doping, X-ray photoelectron spectroscopy (XPS) data also exhibit a 0.5 eV shift toward higher binding energies for Mo 3d and S 2p peaks in the presence of TiO2, indicating Fermi level movement toward the conduction band (n-type doping). Ultraviolet photoelectron spectroscopy (UPS) further corroborates the interfacial doping model, as MoS2 flakes capped with ultrathin TiO2 exhibit a reduction of 0.3 eV in the effective work function. Finally, a systematic comparison of the impact of selective doping with the TiO2 layer under the source-drain metal relative to that on top of the MoS2 channel shows a larger benefit for transistor performance from the reduction in source-drain contact resistance. PMID:26649572

  12. Few-Layer MoS₂ p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation.

    PubMed

    Nipane, Ankur; Karmakar, Debjani; Kaushik, Naveen; Karande, Shruti; Lodha, Saurabh

    2016-02-23

    P-type doping of MoS2 has proved to be a significant bottleneck in the realization of fundamental devices such as p-n junction diodes and p-type transistors due to its intrinsic n-type behavior. We report a CMOS compatible, controllable and area selective phosphorus plasma immersion ion implantation (PIII) process for p-type doping of MoS2. Physical characterization using SIMS, AFM, XRD and Raman techniques was used to identify process conditions with reduced lattice defects as well as low surface damage and etching, 4X lower than previous plasma based doping reports for MoS2. A wide range of nondegenerate to degenerate p-type doping is demonstrated in MoS2 field effect transistors exhibiting dominant hole transport. Nearly ideal and air stable, lateral homogeneous p-n junction diodes with a gate-tunable rectification ratio as high as 2 × 10(4) are demonstrated using area selective doping. Comparison of XPS data from unimplanted and implanted MoS2 layers shows a shift of 0.67 eV toward lower binding energies for Mo and S peaks indicating p-type doping. First-principles calculations using density functional theory techniques confirm p-type doping due to charge transfer originating from substitutional as well as physisorbed phosphorus in top few layers of MoS2. Pre-existing sulfur vacancies are shown to enhance the doping level significantly. PMID:26789206

  13. Enhanced room-temperature thermoelectric performance of In-doped ZnO:Al thin films through prefabricated layer doping method

    NASA Astrophysics Data System (ADS)

    Zheng, Zhuang-Hao; Fan, Ping; Luo, Jing-Ting; Liang, Guang-Xing; Zhang, Dong-Ping

    2015-05-01

    In this study, AZO thin films prepared by direct current reactive magnetron sputtering using a Zn-Al alloy target and In with varied content were doped through the prefabricated layer doping method in order to optimize their thermoelectric properties. The effects of In content on the room temperature microstructure and thermoelectric properties of the AZO thin films were investigated. It was found that the absolute value of the Seebeck coefficient of the thin films increases stably after In doping and reaches 153 μV·K-1 when the In content is 0.71%. Though the electrical conductivity of In-doped thin films is smaller than those of the un-doped films, the power factor of the thin films shows a significant increase after In doping with a maximum value of 2.22 × 10-4 W·m-1·K-2, which is several times that of the un-doped films.[Figure not available: see fulltext.

  14. Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

    SciTech Connect

    Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U.; Bergsten, J.; Rorsman, N.

    2015-12-28

    The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

  15. Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells

    SciTech Connect

    Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen

    2011-11-15

    In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

  16. Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

    PubMed

    Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

    2015-10-01

    In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. PMID:26070189

  17. Photoluminescence study of (Er3+ + Yb3+) doped gallium nitride layers fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prajzler, Vaclav; Hüttel, Ivan; Spirkova, Jarmila; Oswald, Jiri; Perina, Vratislav; Zavadil, Jiri; Machovic, Vladimír; Burian, Zdenek

    2005-09-01

    Erbium (Er3+) and Ytterbium (Yb3+) ions doped Gallium Nitride (GaN) layers were deposited by RF magnetron sputtering. Deposition was carried out in Ar + N2 gas mixture using Ga and Ga2O3 target as the source of Gallium. For the erbium and ytterbium doping, the Er2O3, Yb2O3 pellets, or Er and Yb powder were laid on the top of the Ga2O3 target. The GaN layers were deposited on silicon and Corning glass substrates. The properties of the GaN layers were investigated by using X-ray diffraction, Raman spectroscopy, absorption spectra and photoluminescence spectra. Prism coupling mode spectroscopy was used to measure the waveguiding properties. The composition of the fabricated samples was determined by using nuclear chemical analysis as Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA). The results of the experiments were evaluated in terms of the relations between the technology approaches and the composition and luminescence properties of the fabricated thin films. Up to now the best results, which can be utilized for a structure operating at 1550 nm (when pumped at 980 nm), were obtained when using (erbium plus ytterbium) metallic powder and Corning glass as the substrate for the deposition.

  18. Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

    1989-01-01

    Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

  19. Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

    SciTech Connect

    Wan, Zhixin; Kwack, Won-Sub; Lee, Woo-Jae; Jang, Seung-II; Kim, Hye-Ri; Kim, Jin-Woong; Jung, Kang-Won; Min, Won-Ja; Yu, Kyu-Sang; Park, Sung-Hun; Yun, Eun-Young; Kim, Jin-Hyock; Kwon, Se-Hun

    2014-09-15

    Highlights: • Ti doped ZnO films were prepared on Corning XG glass substrate by ALD. • The electrical properties and optical properties were systematically investigated. • An optimized Ti doped ZnO films had low resistivity and excellent optical transmittance. - Abstract: Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10{sup −3} Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance.

  20. Solution Processing of Cadmium Sulfide Buffer Layer and Aluminum-Doped Zinc Oxide Window Layer for Thin Films Solar Cells

    NASA Astrophysics Data System (ADS)

    Alam, Mahboob; Islam, Mohammad; Achour, Amine; Hayat, Ansar; Ahsan, Bilal; Rasheed, Haroon; Salam, Shahzad; Mujahid, Mohammad

    2014-07-01

    Cadmium sulfide (CdS) and aluminum-doped zinc oxide (Al:ZnO) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al:ZnO thin films were produced using chemical bath deposition (CBD) and sol-gel technique, respectively. For CBD CdS, the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12-17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS) to 3.76 eV along with a shift in the absorption edge toward 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al:ZnO films prepared via spin coating of precursor sols containing 0.90-1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is 2.7 × 10-4 Ω ṡ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

  1. On the radiation resistance of planar Gunn diodes with δ-doped layers

    SciTech Connect

    Obolenskaya, E. S. Churin, A. Yu.; Obolensky, S. V.; Murel, A. V.; Shashkin, V. I.

    2015-11-15

    The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.

  2. Fluorine contamination in yttrium-doped barium zirconate film deposited by atomic layer deposition

    SciTech Connect

    An Jihwan; Beom Kim, Young; Sun Park, Joong; Hyung Shim, Joon; Guer, Turgut M.; Prinz, Fritz B.

    2012-01-15

    The authors have investigated the change of chemical composition, crystallinity, and ionic conductivity in fluorine contaminated yttrium-doped barium zirconate (BYZ) fabricated by atomic layer deposition (ALD). It has been identified that fluorine contamination can significantly affect the conductivity of the ALD BYZ. The authors have also successfully established the relationship between process temperature and contamination and the source of fluorine contamination, which was the perfluoroelastomer O-ring used for vacuum sealing. The total removal of fluorine contamination was achieved by using all-metal sealed chamber instead of O-ring seals.

  3. Ion beam fabrication of aluminum-doped zinc oxide layer for high-performance liquid crystals alignment.

    PubMed

    Liu, Yang; Lee, Ju Hwan; Seo, Dae-Shik

    2016-07-25

    In this paper, a 1.8 keV ion beam (IB) sputtered thin layer of aluminum-doped zinc oxide (AZO) with columnar AZO bumps covering the surface working as an alignment layer for the homogeneous alignment of liquid crystals (LC) is investigated. Bumpy AZO alignment layers in twisted nematic (TN) cells generated larger LC pre-tilt angles and thus enabled accelerated switching of LC, and the highly conductive bumpy AZO thin layers allowed super-fast release of accumulated charges, and led to low residual DC performance. These results indicate the promising applications of AZO bumps layer as alignment layer in LC devices. PMID:27464189

  4. Photocatalytic Hydrogen Production over Chromium Doped Layered Perovskite Sr2TiO4.

    PubMed

    Sun, Xiaoqin; Xie, Yinghao; Wu, Fangfang; Chen, Hongmei; Lv, Meilin; Ni, Shuang; Liu, Gang; Xu, Xiaoxiang

    2015-08-01

    Layered semiconductor photocatalysts have been found to exhibit promising performance levels, probably linked to their interlayer framework that facilitates separation of charge carriers and the reduction/oxidation reactions. Layered titanates, however, generally demonstrate activities under UV irradiation, and therein lies the strong desire to extend their activity into the visible light region. Here, we investigated a series of layered perovskite by doping Sr2TiO4 with Cr and/or La in the hope to improve their visible light responses. Their crystal structures and other physicochemical properties were systematically explored. Our results show that La and Cr can be successfully accommodated in the layered structure and Cr is an efficient dopant for the extension of visible light absorbance. Much enhanced photocatalytic hydrogen evolution was observed after doping and was found to be composition-dependent. The highest hydrogen production rate approaches 97.7 μmol/h for Sr2Ti0.95Cr0.05O4-δ under full range irradiation (λ ≥ 250 nm) and 17 μmol/h for Sr2Ti0.9Cr0.1O4-δ under visible light irradiation (λ ≥ 400 nm), corresponding to an apparent quantum efficiency of 0.16% and 0.05%, respectively. Theoretical calculation reveals that the improved optical and photocatalytic properties are owing to a newly formed spin-polarized valence band from Cr 3d orbitals. The decreased unit cell parameters, reduced band gaps as well as anisotropic properties of layered architectures are likely the reasons for a better activity. Nevertheless, instability of these compounds in the presence of moisture and CO2 was also noticed, suggesting that protective atmospheres are needed for the storage of these photocatalysts. PMID:26171625

  5. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  6. Dimensionality and doping effect on the Core-level X-ray photoemission satellites in layered ruthenates.

    NASA Astrophysics Data System (ADS)

    Guo, Haizhong; Li, Yi; Hu, Biao; Jin, Rongying; Plummer, E. W.; Zhang, Jiandi; Urbina, D.; Liu, Tijiang; Fobes, David; Mao, Zhiqiang

    2009-03-01

    Core-level photoelectron spectra of the layered perovskite crystal Srn+1RunO3n+1 (n = 1, 2, and 3) and Mn-doped Sr3Ru2O7 are investigated by x-ray photoemission spectroscopy (XPS) techniques. The Sr 3d and Ru 3d core-level spectra exhibit a two-peak structure, screened and unscreened peaks, indicating strong correlation effects among Ru 4d electrons. However, there are little changes of the core-level satellite features with n, suggesting the electron-electron correlation is mainly confined in the RuO2 plane. On the other hand, doping of Mn will drastically affect the core-level spectral weight, reflecting the doping-induced metal-to-insulator transition in the doped system. The position of Ru-core levels remain the same, thus, indicating no doping-induced change of Ru valence.

  7. Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering

    PubMed Central

    Jung, Min-Cherl; Raga, Sonia R.; Ono, Luis K.; Qi, Yabing

    2015-01-01

    We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure. PMID:25985417

  8. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

    NASA Astrophysics Data System (ADS)

    Růžička, J.; Caha, O.; Holý, V.; Steiner, H.; Volobuiev, V.; Ney, A.; Bauer, G.; Duchoň, T.; Veltruská, K.; Khalakhan, I.; Matolín, V.; Schwier, E. F.; Iwasawa, H.; Shimada, K.; Springholz, G.

    2015-01-01

    We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers with Mn concentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.

  9. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    PubMed

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material. PMID:26960451

  10. Magnetic, luminescent Eu-doped Mg-Al layered double hydroxide and its intercalation for ibuprofen.

    PubMed

    Wang, Jun; Zhou, Jideng; Li, Zhanshuang; Song, Yanchao; Liu, Qi; Jiang, Zhaohua; Zhang, Milin

    2010-12-27

    A magnetic, luminescent Eu-doped Mg-Al layered double hydroxide with ibuprofen (IBU) intercalated in the gallery has been successfully prepared by a simple coprecipitation method. The physicochemical properties of the samples were well characterized by powder XRD, TEM, FTIR, TGA, inductively coupled plasma MS (ICP-MS), vibrating sample magnetometry (VSM), and fluorospectrophotometry. The results revealed that Fe(3)O(4) nanoparticles are coated on the surface of layered double hydroxides and the obtained (Mg(2)Al(0.95)Eu(0.05))(Fe)-(IBU) sample exhibits both superparamagnetic and luminescent properties, with a saturation magnetization value of 1.86 emu  g(-1) and a strong emission band at 610 nm, respectively. Additionally, it was found that the ibuprofen loading amount is about 31 % (w/w), and the intercalated ibuprofen possesses sustained release behavior when the magnetic, luminescent composite is immersed in simulated body fluid (SBF). PMID:21038324

  11. Solution doped preform with improved uniformity and concentration using dual-layer soot deposition

    NASA Astrophysics Data System (ADS)

    Muhd-Yassin, S. Z.; Omar, Nasr Y. M.; Mat-Sharif, K. A.; Zulkifli, M. I.; Safar, M. H.; Aljamimi, S. M.; Yusoff, Z.; Emami, S. D.; Paul, M. C.; Abdul-Rashid, H. A.

    2016-03-01

    A new method of soot deposition to improve the characteristics of a solution-doped optical fibre preform is reported. The soot was generated using a modified chemical vapour deposition (MCVD) technique. A better longitudinal uniformity of the core refractive index profile and a higher degree of dopant incorporation were obtained when two layers of soot were deposited in the core. These improvements were further extended by depositing each layer at different temperatures. A variation of 0.15 × 10-2 (%RSD 3.5%) in the refractive index difference along 23 cm of the preform and a core-to-cladding refractive index difference of approximately 0.012 were achieved using a 1.2 M AlCl3 solution.

  12. Microstructure of the Native Oxide Layer on Ni and Cr-doped Ni Nanoparticles

    SciTech Connect

    Wang, Chong M.; Baer, Donald R.; Bruemmer, Stephen M.; Engelhard, Mark H.; Bowden, Mark E.; Sundararajan, J. A.; Qiang, You

    2011-10-01

    Metallic or alloy nanoparticles exposed to air at room temperature will be instantaneously oxidized and covered by an oxide layer. However, for most cases, the true structural nature of the oxide layer formed at this stage is hard to determine. In this paper, we report the structure, morphology, and electronic structure (the density of state of both valence and conduction bands measured by a combination of XPS and EELS) of pure Ni and Cr-doped Ni nanoparticles synthesized using a cluster deposition process. Structural characterization carried out at the atomic level using aberration corrected high resolution transmission electron microscopy (HRTEM) in combination with electron and x-ray diffractions reveals that both pure Ni and Cr-doped Ni particles exposed to air at room temperature similarly possesses a core-shell structure of metal core covered by an oxide layer of typically 1.6 nm in thickness. There exists a critical size of ~ 6 nm, below which the particle is fully oxidized. The oxide particle corresponds to the rock-salt structured NiO and is faceted on the (001) planes. XPS of O-1s shows a strong peak that is attributed to (OH)-, which in combination with the atomic level HRTEM imaging indicates that the very top layer of the oxide is hydrolyzed as Ni(OH)2. Chemical composition analysis using EDS, EELS, and XPS indicates that the Cr dopant at the level of ~ 5at% forms solid solution with the Ni lattice. The Cr shows no segregation on the surface or preferential oxidation during the initial oxidation.

  13. The effects of doping layer location on the electronic and optical properties of GaN step quantum well

    NASA Astrophysics Data System (ADS)

    Dakhlaoui, Hassen

    2016-09-01

    In the present work, the intersubband transition and the optical absorption coefficient between the ground and the first excited states in the Si-δ-doped step AlGaN/GaN quantum well were theoretically studied by solving Schrödinger-Poisson equations self-consistently within the framework of effective mass approximation. The delta-doped layer was inserted in three different locations (middle of the quantum well, middle of the step quantum well and middle of the left barrier). The obtained results show that the energy difference between the ground and the first excited state and the optical absorption depend not only on the doping layer concentration but also on its location. The shape of the confining potential and the wavefunctions were also changed depending on the doped layer location. It was found that doping in the middle quantum well is advantageous to obtain an optical absorption with a higher energy separation; however, doping in the left barrier gives us an optical absorption with a lower energy separation. The obtained results in optical absorption give us a new degree of freedom in optoelectronic devices based on intersubband transitions.

  14. Layer-by-layer assembly of multifunctional porous N-doped carbon nanotube hybrid architectures for flexible conductors and beyond.

    PubMed

    Zhao, Songfang; Gao, Yongju; Li, Jinhui; Zhang, Guoping; Zhi, Chunyi; Deng, Libo; Sun, Rong; Wong, Ching-Ping

    2015-04-01

    Coassemble diverse functional nanomaterials with carbon nanotubes (CNTs) to form three-dimensional (3D) porous CNTs hybrid architectures (CHAs) are potentially desirable for applications in energy storage, flexible conductors, and catalysis, because of diverse functionalities and synergistic effects in the CHAs. Herein, we report a scalable strategy to incorporate various functional nanomaterials with N-doped CNTs (N-CNTs) into such 3D porous CHAs on the polyurethane (PU) sponge skeletons via layer-by-layer (LbL) assembly. To investigate their properties and applications, the specific CHAs based on N-CNTs and Ag nanoparticles (NPs), denoted as PU-(N-CNTs/Ag NPs)n, are developed. The unique binary structure enables these specific CHAs conductors to possess reliable mechanical and electrical performance under various elastic deformations as well as excellent hydrophilicity. Moreover, they are employed as strain-gauge sensor and heterogeneous catalyst, respectively. The sensor could detect continuous signal, static signal, and pulse signal with superior sustainability and reversibility, indicating an important branch of electromechanical devices. Furthermore, the synergistic effects among N-CNTs, Ag NPs, and porous structure endow the CHAs with excellent performance in catalysis. We have a great expectation that LbL assembly can afford a universal route for incorporating diverse functional materials into one structure. PMID:25749434

  15. Magnetic phase diagram of layered manganites in the highly doped regime.

    SciTech Connect

    Mitchell, J. F.; Ling, C. D.; Millburn, J. E.; Argyriou, D. N.; Berger, A.; Medarde, M.

    2000-11-02

    The naturally layered colossal magnetoresistive (CMR) manganites La{sub 2{minus}2x}Sr{sub 1+2x}Mn{sub 2}O{sub 7} exhibit an extremely varied range of magnetic and electronic behavior over a very narrow composition range between x = 0.3 and x = 0.5. The successful synthesis in our laboratories of compounds with nominally greater than 50 percent Mn{sup 4+} concentration has now allowed the study of this heretofore unexplored region of the phase diagram. Here we present detailed neutron diffraction measurements of these compounds with doping levels 0.5 < x <1.0. As predicted by simple theories, the type-A layered antiferromagnetic (AF) structure is found at x{approximately}0.5 and the type-G ''rocksalt'' AF structure at x = 1.0. Between these two extremes is found a C-type structure (ferromagnetic rods parallel to b coupled antiferromagnetically to all neighboring rods) stabilized by orbital ordering of y{sup 2} states. Also in this Mn{sup 4+}-rich regime is found a region in which no long-range magnetic order is observed. We discuss how semi-empirical models can explain the variety of magnetic structures and how structural trends as a function of doping corroborate the unifying notion of a shift from in-plane to axial orbital occupation as the Mn{sup 4+} concentration is decreased.

  16. Optical detection of strain and doping inhomogeneities in single layer MoS2

    NASA Astrophysics Data System (ADS)

    Michail, A.; Delikoukos, N.; Parthenios, J.; Galiotis, C.; Papagelis, K.

    2016-04-01

    Van der Waals single-layer materials are characterized by an inherent extremely low bending rigidity and therefore are prone to nanoscale structural modifications due to substrate interactions. Such interactions can induce excess charge concentration, conformational ripples, and residual mechanical strain. In this work, we employed spatially resolved Raman and photoluminescence (PL) images to investigate strain and doping inhomogeneities in a single layer exfoliated molybdenum disulphide crystal. We have found that correlations between the spectral parameters of the most prominent Raman bands A1' and E' enable us to decouple and quantify strain and charge doping effects. In comparison with Atomic Force Microscopy (AFM) topography, we show that the spatial distribution of the position of the A- -trion PL peak is strain sensitive and its linewidth can capture features smaller than the laser spot size. The presented optical analysis may have implications in the development of high-quality devices based on two-dimensional materials since structural and electronic modifications affect considerably their carrier mobility and conductivity.

  17. Strain and defects in Si-doped (Al)GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Forghani, Kamran; Schade, Lukas; Schwarz, Ulrich T.; Lipski, Frank; Klein, Oliver; Kaiser, Ute; Scholz, Ferdinand

    2012-11-01

    Si is the most common dopant in (Al)GaN based devices acting as a donor. It has been observed that Si induces tensile strain in (Al)GaN films, which leads to an increasing tendency for cracking of such films with the increase of Si content and/or the increase of Al content. Based on x-ray investigations, the Si-doped films have a larger in-plane lattice constant than their undoped buffer layers, indicating involvement of a mechanism other than the change of lattice constants expected from an alloying effect. In this work, we present a model about Si dislocation interaction while debating other proposed models in the literature. According to our model, Si atoms are attracted to the strain dipole of edge-type dislocations in (Al)GaN films. It is expected that Si is more incorporated on that side of the dislocation, which is under compression leading to the formation of off-balanced dipoles with reduced compressive component. In response to such off-balanced dipoles—appearing as tensile dominant strain dipoles—the dislocation lines climb in order to accommodate the excess tensile strain. However, this dislocation climb mechanism is hindered by forces exerted by vacancies created due to the climb process. Accordingly, we have observed a lower strain level in our Si doped layers when they contain fewer dislocations. These findings were further supported by x-ray diffraction, transmission electron microscopy, and micro-photoluminescence investigations.

  18. Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites

    NASA Astrophysics Data System (ADS)

    Kaur, Ramneek; Kaur, Jagdish; Tripathi, S. K.

    2015-07-01

    Resistive memory devices based on nanocomposites have attracted great potential for future applications in electronic and optoelectronic devices. The successful synthesis of aqueous CdSe nanoparticles has been provided with UV-Vis and Photoluminescence spectroscopy. The two terminal planar devices of CdSe nanocomposite have been fabricated. The effect of Ag doping and additional dielectric buffer layers on the memory devices have been studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The devices show hysteresis loops in both positive and negative bias directions. The memory window has been found to be increased with both Ag doping and PVA layer addition. The charge carrier transport mechanism in the memory devices has been studied by fitting the I-V characteristics with the theoretical model, Space charge conduction model (SCLC). C-V hysteresis loop in both positive and negative bias directions indicate that both the electrons and holes are responsible for memory mechanism of the devices. The switching mechanism of the memory devices has been explained by charge trapping/detrapping model. The retention characteristics show good stability and reliability of the devices.

  19. Layer-dependent fluorination and doping of graphene via plasma treatment.

    PubMed

    Chen, Minjiang; Zhou, Haiqing; Qiu, Caiyu; Yang, Huaichao; Yu, Fang; Sun, Lianfeng

    2012-03-23

    In this work, the fluorination of n-layer graphene is systematically investigated using CHF₃ and CF₄ plasma treatments. The G and 2D Raman peaks of graphene show upshifts after each of the two kinds of plasma treatment, indicating p-doping to the graphene. Meanwhile, D, D' and D + G peaks can be clearly observed for monolayer graphene, whereas these peaks are weaker for thicker n-layer graphene (n ≥ 2) at the same experimental conditions. The upshifts of the G and 2D peaks and the ratio of I(2D)/I(G) for CF₄ plasma treated graphene are larger than those of CHF₃ plasma treated graphene. The ratio of I(D)/I(G) of the Raman spectra is notably small in CF₄ plasma treated graphene. These facts indicate that CF₄ plasma treatment introduces more p-doping and fewer defects for graphene. Moreover, the fluorination of monolayer graphene by CF₄ plasma treatment is reversible through thermal annealing while that by CHF₃ plasma treatment is irreversible. These studies explore the information on the surface properties of graphene and provide an optimal method of fluorinating graphene through plasma techniques. PMID:22382072

  20. Doping effects in p- and n-type layers of 390-nm InGaN DQW lasers

    NASA Astrophysics Data System (ADS)

    Alahyarizadeh, Gh.; Amirhoseiny, M.; Hassan, Z.

    2015-06-01

    The performance characteristics of deep violet InGaN laser diodes (LDs) are theoretically studied with the effects of doping concentrations in p- and n-type layers. Comprehensive study on output performance characteristics such as output power, threshold current, slope efficiency, DQE, and optical intensity, as well as on several internal parameters such as quantum well (QW) carrier densities, electron and hole current densities of deep violet InGaN double quantum well (DQW) lasers, have been done. The simulation results indicate that output power of LD is increased by increasing doping concentration in both n- and p-type layers. it can be due to increased carrier current densities and consequently increased radiative recombination. The results also indicate decrease in slope efficiency and DQE with increasing doping concentration. This situation can be caused by increasing nonradiative recombinations, such as Auger recombination inside and outside the active region, current overflow from the active region, and optical losses. Increasing current overflow from the active region also causes an increase in threshold current. Using higher doping concentration in n-type layers results in increase in electron current density in the n-side and consequently, higher electron flow in the active region. It causes an increase in higher radiative recombination and a higher need for holes and consequently, a higher hole current density in p-type layers. As well as, optical intensity of LDs is increased by increasing the doping concentration.

  1. Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy

    SciTech Connect

    Islam, A. Z. M. Touhidul; Jung, D. W.; Noh, J. P.; Otsuka, N.

    2009-05-01

    Gallium arsenide layers doped with high concentrations of Be and Si by molecular-beam epitaxy are studied by photoluminescence (PL) spectroscopy. PL peaks from doped layers are observed at energies significantly lower than the band-gap of GaAs. The growth and doping conditions suggest that the origin of these peaks is different from that of low energy PL peaks, which were observed in earlier studies and attributed to impurity-vacancy complexes. The dependence of the peak energy on the temperature and the annealing is found to differ from that of the peaks attributed to impurity-vacancy complexes. On the basis of these observations, it is suggested that the low energy peaks are attributed to short range ordered arrangements of impurity ions. This possibility is examined by calculations of the PL spectra with models of pairs of acceptor and donor delta-doped layers and PL experiments of a superlattice of pairs of Be and Si delta-doped layers.

  2. Fabrication of N-doped TiO2 coatings on nanoporous Si nanopillar arrays through biomimetic layer by layer mineralization.

    PubMed

    Yan, Yong; Wang, Dong; Schaaf, Peter

    2014-06-14

    Si/N-doped TiO2 core/shell nanopillar arrays with a nanoporous structure are fabricated through a simple protein-mediated TiO2 deposition process. The Si nanopillar arrays are used as templates and alternatively immersed in aqueous solutions of catalytic molecules (protamine, PA) and the titania precursor (titanium(iv) bis(ammonium lactato)dihydroxide, Ti-BALDH) for the layer by layer mineralization of a PA/TiO2 coating. After a subsequent calcination, a N-doped TiO2 layer is formed, and its thickness could be controlled by varying the cycles of deposition. Moreover, the nanoporous structure of the Si nanopillars strongly affects the formation of the TiO2 layer. The obtained Si/TiO2 nanocomposites show significantly improved solar absorption compared with commercially purchased TiO2 nanoparticles. PMID:24754039

  3. Structural modification of boron-doped ZnO layers caused by hydrogen outgassing

    NASA Astrophysics Data System (ADS)

    Lovics, R.; Csik, A.; Takáts, V.; Hakl, J.; Vad, K.

    2015-07-01

    Results of annealing experiments of boron-doped zinc oxide (ZnO:B) layers prepared by low pressure chemical vapor deposition method on polished Si, soda-lime glass for windows, and AF45 Schott alkali free thin glass substrates are presented. It is shown that short annealing of samples at 150 °C and 300 °C in air causes serious surface degradation of samples prepared on Si and soda-lime glass substrate. The characteristic feature of degradation is the creation of bubbles and craters on the sample surface which fully destroy the continuity of zinc oxide layers. The results of depth distribution mapping of elements indicate that the formation of bubbles is linked to increase in hydrogen concentration in the layer. The surface degradation was not noticed on samples deposited on AF45 Schott alkali free thin glass which has a SiO2 diffusion barrier layer on the surface, only much fewer and smaller bubbles were visible. The results indicate the important role of hydrogen outgassing from the substrate induced by a thermal shock.

  4. The Radar Effects of Perchlorate-Doped Ice in the Martian Polar Layered Deposits

    NASA Astrophysics Data System (ADS)

    Stillman, D.; Winebrenner, D. P.; Grimm, R. E.; Pathare, A.

    2010-12-01

    The presence of perchlorate in soil at near-polar latitudes on Mars suggests that dust in the ice of the North Polar Layered Deposits (NPLD) may introduce perchlorate impurities to that ice. Because eutectic temperatures of perchlorate salts range as low as 206 K (for magnesium perchlorate), perchlorate doping of NPLD ice may result in grain-scale liquid veins and softening of ice rheology at temperatures comparable to those computed for the base of the NPLD in the present climate. Any such softening would be important for understanding how processes including ice flow have shaped the NPLD. Observable consequences of such softening, or of the combination of perchlorate doping and temperatures that could cause softening, are thus similarly important. In particular, the dielectric properties of perchlorate-laden ice in a temperature gradient will change relatively rapidly at the point in the gradient near the eutectic temperature. Here we investigate the radar reflectivity of such a eutectic transition in ice with a model in which perchlorate concentration is constant and temperature varies linearly with depth in the ice. We have conducted measurements of the complex permittivity of Mg and Na perchlorate-doped ice over a range of temperatures (183 - 273 K) and concentrations. Below the eutectic temperature, the perchlorate-doped ice has electrical properties similar to that of choride-doped ice. However, above the eutectic temperature, some of the ice melts forming liquid at triple junctions. At concentrations above 3 mM, the liquid at triple junctions become connected forming brine channels, which greatly increase the dc conductivity and radar attenuation. At concentrations below 3 mM, the liquid at triple junctions are not connected and do not affect the dc conductivity. However, the liquid H2O molecules are able to rotate their permanent dipole at radar frequencies, thus causing an increase in radar attenuation. The MARSIS and SHARAD attenuation rates increase

  5. Electronic structure evolution in doping of fullerene (C{sub 60}) by ultra-thin layer molybdenum trioxide

    SciTech Connect

    Wang, Chenggong; Wang, Congcong; Kauppi, John; Liu, Xiaoliang; Gao, Yongli

    2015-08-28

    Ultra-thin layer molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS). The highest occupied molecular orbital (HOMO) can be observed directly with UPS. It is observed that the Fermi level position in fullerene is modified by ultra-thin-layer molybdenum oxide doping, and the HOMO onset is shifted to less than 1.3 eV below the Fermi level. The XPS results indicate that charge transfer was observed from the C{sub 60} to MoO{sub x} and Mo{sup 6+} oxides is the basis as hole dopants.

  6. Controlled current matching in small molecule organic tandem solar cells using doped spacer layers

    NASA Astrophysics Data System (ADS)

    Schueppel, Rico; Timmreck, Ronny; Allinger, Nikola; Mueller, Toni; Furno, Mauro; Uhrich, Christian; Leo, Karl; Riede, Moritz

    2010-02-01

    Current matching of the subcells is crucial to optimize the performance of tandem solar cells. Due to the thin film optics of organic solar cells, the position of the two subcells relative to the reflecting electrode becomes a very important issue. This is demonstrated for an indium tin oxide (ITO)/pin/pii/Al structure with thin intrinsic absorbing layers consisting of zinc-phthalocyanine and fullerene C60 and a metal-free lossless recombination contact between the subcells. By keeping the thickness of the absorbing layers constant and changing only the thickness of the inner p-doped transparent layer in 16 steps from 0to186nm, the distance of the ITO-sided subcell from the reflecting electrode (Al) is systematically varied. Thus, the p-doped layer works as an optical spacer between both subcells. The influence of its thickness on the thin film optics is shown in optical simulations and confirmed with current-voltage measurements. If both subcells are separated only by the recombination contact, they are positioned in the first interference maximum of the incident light and the currents of the individual subcells nearly matches. By increasing the spacer layer thickness, the ITO-sided subcell is moved to the first interference minimum, limiting the measured short circuit current density jsc of the tandem solar cell to about 1/2 of its initial value without spacer. At a spacer thickness of about 140nm, jsc recovers in the second interference maximum to nearly its original value. Within this series, an almost constant high fill factor of about 59% as well as a constant open circuit voltage of 1.06V is observed, showing that the Ohmic losses in the spacer are negligible. The power conversion efficiency of these devices reaches nearly 4% in the first and approximately 3.6% in the second interference maximum, respectively, in an outdoor test at 1sun. Furthermore, it is shown that for thicker absorber layers, an optimized current density cannot be reached in the first

  7. Crystalline Fraction and Doping Concentration Effect on Heterojunction Solar Cells n-Doped µc-Si:H Back Surface Field Layer.

    PubMed

    Kim, Sangho; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    The back surface field (BSF) plays a vital role for high efficiency in the Heterojunction Intrinsic Thin (HIT) film solar cell. This paper investigated the effect of crystalline volume fraction (Xc) and 1% hydrogen diluted phosphine (PH3) gas doping concentration of the n-type µc-Si:H back surface file (BSF) layer. Initially, the thickness of the n-type µc-Si:H BSF layer was optimized. With increase in Xc from 6% to 59%, the open circuit voltage (Voc) increased from 573 mV to 696 mV, and the fill factor (FF) also increased from 59% to 71%. In the long wavelengths region (≥ 950 nm), the QE of the solar cells decreased over the optimized Xc of the n-doped micro BSF layer, due to the defects of a film. In the second part of this paper, the effect of high conductivity n-type µc-Si:H BSF layer with optimized thickness on the performance of HIT solar cells was investigated, by doping gas ratio variation. Even though Xc decreased, conductivity was increased, with increasing PH3 doping concentration. Under the optimized condition, a n-µc-Si:H BSF layer has a dark conductivity of 2.59 S/cm, activation energy of 0.0519 eV, and X, of 52%. The conversion efficiency of 18.9% was achieved with a Voc of 706 mV, fill factor of 72%, and short circuit current density of 37.1 mW·cm(-2). PMID:26413655

  8. Shallow melting of thin heavily doped silicon layers by pulsed CO/sub 2/ laser irradiation

    SciTech Connect

    James, R.B.; Christie, W.H.

    1989-05-01

    We show that an extremely shallow (approx. <800 A) melt depth can be easily obtained by irradiating a thin (/similar to/200 A) heavily doped silicon layer with a CO/sub 2/ laser pulse. Since the absorption of the CO/sub 2/ laser pulse is dominated by free-carrier transitions, the beam heating occurs primarily in the thin degenerately doped film at the sample surface, and there is little energy deposited in the underlying lightly doped substrate. For CO/sub 2/ pulse-energy densities exceeding a threshold value of about 5 J/cm/sup 2/, surface melting occurs and the reflectivity of the incident laser pulse increases abruptly to about 90%. This large increase in the reflectivity acts like a switch to reflect almost all of the energy in the remainder of the CO/sub 2/ laser pulse, thereby greatly reducing the amount of energy available to drive the melt front to deeper depths in the material. This is in contrast to the energy deposition of a laser pulse that has a photon energy exceeding the band gap, in which case the penetration depth of the incident radiation is only weakly affected by the free-carrier density. Transmission electron microscopy shows no extended defects in the near-surface region after CO/sub 2/ laser irradiation, and van der Pauw electrical measurements verify that 100% of the implanted arsenic dopant is electrically active. Calculated values for the melt depth versus incident pulse-energy density (E/sub L/) indicate that there exists a window where the maximum melt-front penetration increases slowly with increasing E/sub L/ and has a value of less than a few hundred angstroms.

  9. Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

    SciTech Connect

    Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M.; Sawano, Kentarou

    2015-09-28

    We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

  10. Final Technical Report: Grain Boundary Complexions and Transitions in Doped Silicon

    SciTech Connect

    Jian Luo

    2012-10-15

    This four-year research project has advanced the fundamental knowledge of grain boundary (GB) complexions (i.e., "two-dimensional interfacial phases") and associated GB "phase" transitions in several grounds. First, a bilayer interfacial phase, which had been directly observed by microscopy only in complex ceramic systems in prior studies, has been identified in simpler systems such as Au-doped Si and Bi-doped Ni in this study, where the interpretations of the their formation mechanisms and microscopic images are less equivocal. Second, convincing evidence for the existence of a first-order GB transition from a nominally "clean" GB to a bilayer adsorption interfacial phase has been revealed for Au-doped Si; the confirmation of the first-order nature of interfacial transitions at GBs, which was rare in prior studies, is scientifically significant and technologically important. Third, the bilayer interfacial phase discovered in Bi-doped Ni has been found to be the cause of the mysterious liquid metal embrittlement phenomenon in this system; the exact atomic level mechanism of this phenomenon has puzzled the materials and physics communities for over a century. Finally, significant advancements have been made to establish phenomenological thermodynamic models for GB complexions and transitions. Since GB complexions can control the transport, mechanical and physical properties of a broad range of metallic and ceramic materials, the fundamental knowledge generated by this project can have broad impacts on materials design in general. In this regard, understanding and controlling GB phase behaviors (complexions and transitions) can be an important component for the "Materials Genome" project.

  11. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films

    SciTech Connect

    Banerjee, P; Lee, W. J.; Bae, K. R.; Lee, Sang Bok; Rubloff, Gary W

    2010-01-01

    Al-doped ZnO (AZO) films of ∼100 nm thickness with various Aldoping were prepared at 150 °C by atomic layer deposition on quartz substrates. At low Aldoping, the films were strongly textured along the [100] direction, while at higher Aldoping the films remained amorphous. Atomic force microscopy results showed that Al–O cycles when inserted in a ZnOfilm, corresponding to a few atomic percent Al, could remarkably reduce the surface roughness of the films. Hall measurements revealed a maximum mobility of 17.7 cm{sup 2} /V s . Film resistivity reached a minima of 4.4×10{sup −3}  Ω cm whereas the carrier concentration reached a maxima of 1.7×10{sup 20}  cm{sup −3} , at 3 at. % Al. The band gap of AZO films varied from 3.23 eV for undoped ZnOfilms to 3.73 eV for AZO films with 24.6 at. % Al. Optical transmittance over 80% was obtained in the visible region. The detrimental impact of increased Al resulting in decreased conductivity due to doping past 3.0 at. % is evident in the x-ray diffraction data, as an abrupt increase in the optical band gap and as a deviation from the Burstein–Moss effect.

  12. High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

    PubMed Central

    Yang, Shengxue; Tongay, Sefaattin; Yue, Qu; Li, Yongtao; Li, Bo; Lu, Fangyuan

    2014-01-01

    Transition metal dichalcogenides (TMDCs) have recently been the focus of extensive research activity owing to their fascinating physical properties. As a new member of TMDCs, Mo doped ReSe2 (Mo:ReSe2) is an octahedral structure semiconductor being optically biaxial and highly anisotropic, different from most of hexagonal layered TMDCs with optically uniaxial and relatively high crystal symmetry. We investigated the effects of physisorption of gas molecule on the few-layer Mo:ReSe2 nanosheet based photodetectors. We compared the photoresponse of the as-exfoliated device with annealed device both in air or ammonia (NH3) environment. After annealing at sub-decomposition temperatures, the Mo:ReSe2 photodetectors show a better photoresponsivity (~55.5 A/W) and higher EQE (10893%) in NH3 than in air. By theoretical investigation, we conclude that the physisorption of NH3 molecule on Mo:ReSe2 monolayer can cause the charge transfer between NH3 molecule and Mo:ReSe2 monolayer, increasing the n-type carrier density of Mo:ReSe2 monolayer. The prompt photoswitching, high photoresponsivity and different sensitivity to surrounding environment from the few-layer anisotropic Mo:ReSe2 can be used to design multifunctional optoelectronic and sensing devices. PMID:24962077

  13. Fabrication of Beryllium Capsules with Copper-Doped Layers for NIF Targets: A Progress Report

    SciTech Connect

    McElfresh, M; Gunther, J; Alford, C; Fought, E; Cook, R; Nikroo, A; Xu, H; Cooley, J C; Field, R D; Hackenberg, R E; Nobile, A

    2005-08-12

    The sputtering of beryllium (Be) has been used at LLNL for nearly 30 years in the fabrication of laser targets. Several years ago the prospect of using sputtering to fabricate spherical Be capsules for National Ignition Facility (NIF) targets began to be explored and a basic strategy was developed that involved sputtering down onto plastic mandrels bouncing in a pan. While this appears to be very straightforward in principle, in practice sputtering has been used almost exclusively to make thin films (< 1 micron) on flat substrates. Thick films pose a significant challenge for sputtering while materials on spherical substrates are essentially unexplored. More recently, based on computational results, the point design for the first NIF ignition target capsule was specified as a Be capsule with Cu-doped layers of specific thickness, each layer with a different concentration of copper. While the work described here was motivated by the need to make the layered capsules, the primary progress on Be capsules has been the development of a more complete metallurgical understanding of the materials that are fabricated and the beginning of the exploration of the relationship between the sputter processing and microstructure of these spherical samples. At least two barriers to growth to full thickness (i.e. 170 microns) have been identified and efforts to overcome these barriers are underway.

  14. Enhanced magnetization in ultrathin manganite layers via structural ``delta-doping'' of octahedral rotations

    NASA Astrophysics Data System (ADS)

    Moon, Eun Ju; Kirby, Brian J.; May, Steven J.

    The design of rotations and distortions of the corner-shared BO6 octahedra has emerged as an exciting platform to control electronic or magnetic behavior in ABO3 perovskite heterostructures. Recent work has shown that purely structural effects can be used to spatially confined magnetism in oxide heterostructures and point to the design of rotational gradients as routes to realize novel electronic or ferroic states in oxide superlattices [Nat. Comm. 5, 5710 (2014)]. Here, we demonstrate a structural ``delta doping'' approach for controlling magnetism in ultrathin layers within isovalent manganite superlattices. Polarized neutron reflectivity and temperature dependent magnetization measurements are used to correlate enhanced magnetization with local regions of suppressed octahedral rotations in the heterostructures. This work was supported by the U. S. Army Research Office under Grant No. W911NF-15-1-0133.

  15. The preparation of a Eu3+-doped ZnO bi-functional layer and its application in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Wu, Na; Luo, Qun; Qiao, Xvsheng; Ma, Chang-Qi

    2015-12-01

    Recently, spectra conversion has been used to minimize energy loss in photovoltaic devices. In this work, we explore the development of a novel Eu3+-doped ZnO bi-functional layer for use in organic solar cells. The bi-functional layer acts as both a spectra conversion and an electron transporting layer. Compared to conventional spectra conversion layers, it has a simpler device structure, is easier to fabricate, and has a wider spectrum-sensitized region. A series of Eu3+-doped ZnO nanocrystals were synthesized using the simple solution route. X-ray powder diffraction patterns (XRD), transmission electron microscopy (TEM), and UV-visible absorbance spectra were used to characterize the obtained ZnO nanocrystals. The results reveal that the size and bandgap of ZnO nanocrystals can be controlled through regulation of the doping concentration of Eu3+ ions. The energy transfer of ZnO → Eu3+ is observed by photoluminescence (PL) spectra. At a bandgap excitation of around 300-400 nm, a typical emission band from the Eu3+ is obtained. By employing the Eu3+- doped ZnO nanocrystals as a buffer layer in a P3HT:PC61BM bulk heterojunction device, the obtained performance is similar to the undoped ZnO device, indicating that the electrical properties of ZnO are not affected by Eu3+ doping. Due to the down-conversion energy transfer between ZnO and Eu3+, the external quantum efficiency of the ZnO:Eu3+ device at 300-400 nm is higher than that of the pure ZnO device, which subsequently leads to an increase in short circuit current density (J SC). This work proves that it is possible to improve the solar spectrum response in the ultraviolet region of organic solar cells effectively by incorporating the bi-functional layer.

  16. Ni3+ doped monolayer layered double hydroxide nanosheets as efficient electrodes for supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhao, Yufei; Wang, Qing; Bian, Tong; Yu, Huijun; Fan, Hua; Zhou, Chao; Wu, Li-Zhu; Tung, Chen-Ho; O'Hare, Dermot; Zhang, Tierui

    2015-04-01

    Ni3+ doped NiTi layered double hydroxide (NiTi-LDH) monolayer nanosheets with a particle size of ~20 nm and a thickness of ~0.9 nm have been successfully prepared through a facile bottom-up approach. These NiTi-LDH monolayer nanosheets exhibit excellent supercapacitor performance, including a high specific pseudocapacitance (2310 F g-1 at 1.5 A g-1) and long durability compared with bulk LDH, owing to highly exposed conductive Ni3+ species (NiOOH) which lead to the increased mobility rate of surface charge and electrolyte-transfer. Therefore, this work is expected to take a significant step towards exploring novel 2D monolayer electrode materials with unique physical and chemical properties for applications in energy storage and conversion.Ni3+ doped NiTi layered double hydroxide (NiTi-LDH) monolayer nanosheets with a particle size of ~20 nm and a thickness of ~0.9 nm have been successfully prepared through a facile bottom-up approach. These NiTi-LDH monolayer nanosheets exhibit excellent supercapacitor performance, including a high specific pseudocapacitance (2310 F g-1 at 1.5 A g-1) and long durability compared with bulk LDH, owing to highly exposed conductive Ni3+ species (NiOOH) which lead to the increased mobility rate of surface charge and electrolyte-transfer. Therefore, this work is expected to take a significant step towards exploring novel 2D monolayer electrode materials with unique physical and chemical properties for applications in energy storage and conversion. Electronic supplementary information (ESI) available: Experimental details and additional characterization data. See DOI: 10.1039/c5nr01320h

  17. Multifunctional Nitrogen-Doped Loofah Sponge Carbon Blocking Layer for High-Performance Rechargeable Lithium Batteries.

    PubMed

    Gu, Xingxing; Tong, Chuan-Jia; Rehman, Sarish; Liu, Li-Min; Hou, Yanglong; Zhang, Shanqing

    2016-06-29

    Low-cost, long-life, and high-performance lithium batteries not only provide an economically viable power source to electric vehicles and smart electricity grids but also address the issues of the energy shortage and environmental sustainability. Herein, low-cost, hierarchically porous, and nitrogen-doped loofah sponge carbon (N-LSC) derived from the loofah sponge has been synthesized via a simple calcining process and then applied as a multifunctional blocking layer for Li-S, Li-Se, and Li-I2 batteries. As a result of the ultrahigh specific area (2551.06 m(2) g(-1)), high porosity (1.75 cm(3) g(-1)), high conductivity (1170 S m(-1)), and heteroatoms doping of N-LSC, the resultant Li-S, Li-Se, and Li-I2 batteries with the N-LSC-900 membrane deliver outstanding electrochemical performance stability in all cases, i.e., high reversible capacities of 623.6 mA h g(-1) at 1675 mA g(-1) after 500 cycles, 350 mA h g(-1) at 1356 mA g(-1) after 1000 cycles, and 150 mA h g(-1) at 10550 mA g(-1) after 5000 cycles, respectively. The successful application to Li-S, Li-Se, and Li-I2 batteries suggests that loofa sponge carbon could play a vital role in modern rechargeable battery industries as a universal, cost-effective, environmentally friendly, and high-performance blocking layer. PMID:27250732

  18. Material and Doping Dependence of the Nodal and Anti-Nodal Dispersion Renormalizations in Single- and Multi-Layer Cuprates

    SciTech Connect

    Johnston, S.; Lee, W.S.; Nowadnick, E.A.; Moritz, B.; Shen, Z.-X.; Devereaux, T.P.; /Stanford U., Geballe Lab. /SLAC

    2010-02-15

    In this paper we present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of CuO{sub 2} layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.

  19. Lower Atmospheric Boundary Layer Experiment (LABLE) Final Campaign Report

    SciTech Connect

    Klein, P; Bonin, TA; Newman, JF; Turner, DD; Chilson, P; Blumberg, WG; Mishra, S; Wainwright, CE; Carney, M; Jacobsen, EP; Wharton, S

    2015-11-01

    The Lower Atmospheric Boundary Layer Experiment (LABLE) included two measurement campaigns conducted at the Atmospheric Radiation Measurement (ARM) Southern Great Plains site in Oklahoma during 2012 and 2013. LABLE was designed as a multi-phase, low-cost collaboration among the University of Oklahoma, the National Severe Storms Laboratory, Lawrence Livermore National Laboratory, and the ARM program. A unique aspect was the role of graduate students in LABLE. They served as principal investigators and took the lead in designing and conducting experiments using different sampling strategies to best resolve boundary-layer phenomena.

  20. Chemical doping and high-pressure studies of layered β -PdB i2 single crystals

    NASA Astrophysics Data System (ADS)

    Zhao, Kui; Lv, Bing; Xue, Yu-Yi; Zhu, Xi-Yu; Deng, L. Z.; Wu, Zheng; Chu, C. W.

    2015-11-01

    We have systematically grown large single crystals of the layered compounds β -PdB i2 , and both the hole-doped PdB i2 -xP bx and the electron-doped N axPdB i2 , and studied their magnetic and transport properties. Hall effect measurements on PdB i2 , PdB i1.8P b0.2 , and N a0.057PdB i2 show that the charge transport is dominated by electrons in all of the samples. The electron concentration is substantially reduced upon Pb doping in PdB i2 -xP bx and increased upon Na intercalation in N axPdB i2 , indicating effective hole doping by Pb and electron doping by Na. We observed a monotonic decrease of the superconducting transition temperature (Tc) from 5.4 K in undoped PdB i2 to less than 2 K for x >0.35 in hole-doped PdB i2 -xP bx . Meanwhile, a rapid decrease of Tc with Na intercalation is also observed in the electron-doped N axPdB i2 , which is in disagreement with the theoretical expectation. In addition, both the magnetoresistance and Hall resistance further reveal evidence for a possible spin excitation associated with Fermi surface reconstruction at ˜50 K in the Na-intercalated PdB i2 sample. The complete phase diagram is thus established from hole doping to electron doping. Meanwhile, a high-pressure study of the undoped PdB i2 shows that the Tc is linearly suppressed under pressure with a d Tc/d P coefficient of -0.28 K/GPa.

  1. Carbon transport in the bottom boundary layer. Final report

    SciTech Connect

    Agrawal, Y.C.

    1998-10-05

    This report summarizes the activities and findings from a field experiment devised to estimate the rates and mechanisms of transport of carbon across the continental shelves. The specific site chosen for the experiment was the mid-Atlantic Bight, a region off the North Carolina coast. The experiment involved a large contingent of scientists from many institutions. The specific component of the program was the transport of carbon in the bottom boundary layer. The postulate mechanisms of transport of carbon in the bottom boundary layer are: resuspension and advection, downward deposition, and accumulation. The high turbulence levels in the bottom boundary layer require the understanding of the coupling between turbulence and bottom sediments. The specific issues addressed in the work reported here were: (a) What is the sediment response to forcing by currents and waves? (b) What is the turbulence climate in the bottom boundary layer at this site? and (c) What is the rate at which settling leads to carbon sequestering in bottom sediments at offshore sites?

  2. Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

    NASA Astrophysics Data System (ADS)

    Taohong, Wang; Changbo, Chen; Kunping, Guo; Guo, Chen; Tao, Xu; Bin, Wei

    2016-03-01

    The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (P3HT:PCBM) polymer solar cell, we studied the effect of the cathode buffer layer (CBL) between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode (OLED) were employed as the CBL in the P3HT:PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline (Bphen), and 8-hydroxyquinolatolithium (Liq) can be used as CBL to efficiently improve the device performance of the P3HT:PCBM polymer solar cells. The P3HT:PCBM devices employed various CBLs possess power conversion efficiencies (PCEs) of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen:Cs2CO3 and Bphen:Liq as the CBL, the PCE of the P3HT:PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL. Project supported by the National Natural Science Foundation of China (Grant No. 61204014), the “Chenguang” Project (13CG42) supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation, China, and the Shanghai University Young Teacher Training Program of Shanghai Municipality, China.

  3. Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation

    SciTech Connect

    Cherekdjian, S.; Maschmeyer, R. O.; Cites, J.; Tatemichi, J.; Inouchi, Y.; Onoda, M.; Orihira, K.; Matsumoto, T.; Konishi, M.; Naito, M.

    2011-01-07

    A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.

  4. Band offset of vanadium-doped molybdenum oxide hole transport layer in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Chang, Feng-Kuei; Huang, Yi-Chi; Jeng, Jiann-Shing; Chen, Jen-Sue

    2016-08-01

    Solution-processed vanadium-doped molybdenum oxide films (V)MoOx films with mole ratios of Mo:V = 1:0, 1:0.05, 1:0.2, 1:0.5, 0:1, are fabricated as hole transport layer (HTL) in organic photovoltaics with active layer blend comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). The device structure is ITO/(V)MoOx/P3HT:PCBM/ZnO NP/Al, and the working area is 0.16 cm2. The result shows that the device using V0.05MoOx HTL has the best performance, including power conversion efficiency of 2.16%, Voc of 0.6 V, Jsc of 6.93 mA/cm2, and FF of 51.9%. Using ultraviolet photoelectron spectroscopy (UPS), we can define the energy levels of valence band edge and Fermi level of (V)MoOx films. UPS analysis indicates that V0.05MoOx has the smallest energy band offset between its valence band edge to the HOMO of P3HT, which is advantageous for hole transporting from P3HT to ITO anode via the V0.05MoOx HTL. In addition, V0.05MoOx film shows the lowest electrical resistivity among all (V)MoOx films, which is further beneficial for hole transportation.

  5. Improve efficiency of perovskite solar cells by using Magnesium doped ZnO and TiO2 compact layers

    NASA Astrophysics Data System (ADS)

    Baktash, Ardeshir; Amiri, Omid; Sasani, Alireza

    2016-05-01

    Here the effect of Magnesium doped TiO2 and ZnO as hole blocking layers (HBLs) are investigated by using solar cell capacitance simulator (SCAPS). The Impact of Magnesium concentration into the TiO2 and ZnO and effect of operating temperature on the performance of the perovskite solar cell are investigated. Best cell performance for both TiO2 and ZnO HBLs (with cell efficiencies of 19.86% and 19.57% respectively) are concluded for the doping level of 10% of Mg into the structure of HBLs. Increase in operating temperature from 300 K to 400 K are decreased the performance of the perovskite solar cell with both pure and Mg-doped HBLs. However, the cells with pure ZnO layer and with Zn0.9 Mg0.1O layer show the highest (with a decline of 8.88% in efficiency) and the lowest stability (with a decline of 50.49% in efficiency) at higher temperatures respectively. Moreover, the cell with Ti0.9 Mg0.1O2 layer shows better stability (with 21.85% reduction in efficiency) than the cell with pure TiO2 compact layer (with 23.28% reduction in efficiency) at higher operating temperatures.

  6. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  7. The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Salehzadeh, O.; He, C.; Benyon, W.; SpringThorpe, A. J.

    2016-07-01

    We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In1-xGaxAsyP1-y quaternary layers (x=0.18-0.41 and y=0.34-0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions, a systematic reduction (increase) in Indium (Gallium) was observed. This was accompanied by a reduction in the overall growth rate, and increased tensile strain, with increasing DEZn flow. In contrast, the dependence of arsenic/phosphorus incorporation on DEZn flow was found to depend on the surface stoichiometry. We show quantitatively that the observed tensile strain can be explained by compositional variations caused by the Zn-doping process. These results suggest that DEZn affects both homogeneous and heterogeneous processes during the growth of InGaAsP layers.

  8. Structural phase states in nickel-titanium surface layers doped with silicon by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kashin, Oleg A.; Lotkov, Aleksandr I.; Kudryashov, Andrey N.; Krukovsky, Konstantin V.; Ostapenko, Marina G.; Neiman, Alexey A.; Borisov, Dmitry P.

    2015-10-01

    The paper reports on a study of NiTi-based alloys used for manufacturing self-expanding intravascular stents to elucidate how the technological modes of plasma immersion ion implantation with silicon influence the chemical and phase composition of their surface layers. It is shown that two types of surface structure can be obtained depending on the mode of plasma immersion implantation: quasi-amorphous Si coating and Si-doped surface layer. The Si-doped surface layer contains new phases: a phase structured as the main B2 phase of NiTi but with a lower lattice parameter, R phase, and phase of highly dispersed SiO2 precipitates.

  9. A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Han, Kyu Seok; Kalode, Pranav Y.; Koo Lee, Yong-Eun; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo

    2016-02-01

    Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility.Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08016a

  10. Ab initio search for novel bipolar magnetic semiconductors: Layered YZnAsO doped with Fe and Mn

    NASA Astrophysics Data System (ADS)

    Bannikov, V. V.; Ivanovskii, A. L.

    2013-02-01

    Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (Xingxing Li et al., arXiv:1208.1355) was proposed. In this work, a novel way to creation of bipolar magnetic semiconductors by doping of non-magnetic semiconducting 1111 phases with magnetic d n < 10 atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite 100% spin polarization where multiple gate-controlled spin-polarization can be expected are proposed.

  11. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  12. Effect of thin emitter set-back layer on GaAs delta-doped emitter bipolar junction transistor

    NASA Astrophysics Data System (ADS)

    Lew, K. L.; Yoon, S. F.

    2005-05-01

    GaAs delta-doped emitter bipolar junction transistors (δ-BJT) with different emitter set-back layer thicknesses of 10to50nm were fabricated to study the emitter set-back layer thickness effect on device dc performance. We found that the current gain decreases following decrease in the emitter set-back layer thickness. A detailed analysis was performed to explain this phenomenon, which is believed to be caused by reduction of the effective barrier height in the δ-BJT. This is due to change in the electric-field distribution in the delta-doped structure caused by the built-in potential of the base-emitter (B-E ) junction. Considering the recombination and barrier height reduction effects, the thickness of the emitter set-back layer should be designed according to the B-E junction depletion width with a tolerance of ±5nm. The dc performance of a δ-BJT designed based on this criteria is compared to that of a Al0.25Ga0.75As /GaAs heterojunction bipolar transistor (HBT). Both devices employed base doping of 2×1019cm-3 and base-to-emitter doping ratio of 40. Large emitter area (AE≈1.6×10-5cm-2) and small emitter area (AE≈1.35×10-6cm-2) device current gains of 40 and 20, respectively, were obtained in both types of transistors passivated by (NH4)2S treatment. The measured current gain of the GaAs δ-BJT is the highest reported for a homojunction device with such high base-to-emitter doping ratio normally used in HBT devices.

  13. Carbon transport in the bottom boundary layer. Final report

    SciTech Connect

    Lohrenz, S.E.; Asper, V.L.

    1997-09-01

    The authors objective was to characterize distributions of chloropigment fluorescence in relation to physical processes in the benthic boundary layer in support of the Department of Energy (DOE) Ocean Margins Program`s (OMP) goal of quantifying carbon transport across the continental shelf. Their approach involved participation in the Ocean Margins Program (OMP) field experiment on the continental shelf off Cape Hatteras by conducting multi-sensor fluorescence measurements of photosynthetic pigments. Specific tasks included (1) pre- and post-deployment calibration of multiple fluorescence sensors in conjunction with Woods Hole personnel; (2) collection and analysis of photosynthetic pigment concentrations and total particulate carbon in water column samples to aid in interpretation of the fluorescence time-series during the field experiment; (3) collaboration in the analysis and interpretation of 1994 and 1996 time-series data in support of efforts to quantify pigment and particulate organic carbon transport on the continental shelf off Cape Hatteras. This third component included analysis of data obtained with a multi-sensor fiber-optic fluorometer in the benthic boundary layer of the inner shelf off Cape Hatteras during summer 1994.

  14. Radionuclide separations using pillared layered materials. Final report

    SciTech Connect

    Clearfield, A.

    1995-08-31

    The objective of this project is to prepare an all inorganic strontium specific sorbent or ion exchanger for the removal of highly alkaline nuclear waste solutions. A series of clays and layered titanates were pillared and calcined to convert their essentially two dimensional structure to three dimensional porous structures with high surface areas. The pillaring agents were alumina, zirconia, chromia and silica based. The pillared clays, particularly those containing Zr pillars, achieved moderate (Kd as high at 13,700 ml/g with V:m = 28) selectivities for Sr{sup 2+}. In contrast, the silica pillared titanates showed exceptional affinities for Sr{sup 2+} with Kd values in excess of 100,000 ml/g in 5M NaNO{sup 3} + 1M NaOH. These latter results suggest a more detailed study of the pillared titanates in the presence of simulants closely resembling real waste solutions.

  15. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    NASA Technical Reports Server (NTRS)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  16. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, Von L.; Singhal, Subhash C.; Pal, Uday B.

    1992-01-01

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro.sub.3 particles; (2) dispersing doped LaCrO.sub.3 particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then electrochemical vapor depositing a dense skeletal LaCrO.sub.3 structure, between and around the doped LaCrO.sub.3 particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell.

  17. Low-energy model and electron-hole doping asymmetry of single-layer Ruddlesden-Popper iridates

    NASA Astrophysics Data System (ADS)

    Hampel, Alexander; Piefke, Christoph; Lechermann, Frank

    2015-08-01

    We study the correlated electronic structure of single-layer iridates based on structurally undistorted Ba2IrO4 . Starting from the first-principles band structure, the interplay between local Coulomb interactions and spin-orbit coupling is investigated by means of rotational-invariant slave-boson mean-field theory. The evolution from a three-band description towards an anisotropic one-band (J =1 /2 ) picture is traced. Single-site and cluster self-energies shed light on competing Slater- and Mott-dominated correlation regimes. A nodal/antinodal Fermi-surface dichotomy is revealed at strong coupling, with an asymmetry between electron and hole doping. Electron-doped iridates show clearer tendencies of Fermi-arc formation, reminiscent of hole-doped cuprates.

  18. Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures

    SciTech Connect

    Antonov, A. V.; Drozdov, M. N.; Novikov, A. V. Yurasov, D. V.

    2015-11-15

    The segregation of Sb in Ge epitaxial layers grown by the method of molecular beam epitaxy on Ge (001) substrates is investigated. For a growth temperature range of 180–325°C, the temperature dependence is determined for the segregation ratio of Sb in Ge, which shows a sharp increase (by more than three orders of magnitude) with increasing temperature. The strong dependence of the segregation properties of Sb on the growth temperature makes it possible to adapt a method based on the controlled use of segregation developed previously for the doping of Si structures for the selective doping of Ge structures with a donor impurity. Using this method selectively doped Ge:Sb structures, in which the bulk impurity concentration varies by an order of magnitude at distances of 3–5 nm, are obtained.

  19. Tape method of forming a thin layer of doped lanthanum chromite particles and of bonding such on an electrode

    DOEpatents

    Richards, V.L.; Singhal, S.C.; Pal, U.B.

    1992-07-21

    A combustible polymer film, useful for application of an interconnection on an electrode is made by: (1) providing doped LaCro[sub 3] particles; (2) dispersing doped LaCrO[sub 3] particles in a solvent, to provide a dispersion; (3) screening the dispersion to provide particles in the range of from 30 micrometers to 80 micrometers; (4) admixing a fugitive polymer with the particles; (5) casting the dispersion to provide a film; (6) drying the film; and (7) stripping the film. The film can then be applied to a porous, preheated electrode top surface, and then a dense skeletal LaCrO[sub 3] structure is electrochemically vapor deposited between and around the doped LaCrO[sub 3] particles. Additional solid oxide electrolyte and fuel electrode layers can then be added to provide a fuel cell. 4 figs.

  20. Tunable plasmons in few-layer nitrogen-doped graphene nanostructures: A time-dependent density functional theory study

    NASA Astrophysics Data System (ADS)

    Shu, Xiao-qin; Zhang, Hong; Cheng, Xin-lu; Miyamoto, Yoshiyuki

    2016-05-01

    Compared with conventional metal plasmonic materials, surface plasmons in graphene are advantageous in terms of higher confinement, relative low loss, flexible featuring, and good tunability. However, the working frequencies of the pristine graphene (undoped graphene) surface plasmons are located in the terahertz and infrared regions, which limit their applications. Here we show high-frequency plasmons in nitrogen (N)-doped graphene nanostructures investigated by time-dependent density functional theory. We found the optical absorption strength of systems containing two layers to be more than twofold stronger than that of systems with monolayers. The optical absorption strength increases as the interlayer distance increases, and the absorption spectra are red-shifted for impulse excitations polarized in the armchair edge direction (x axis). For microstructures of more than two layers, the optical absorption strength increases as number of layers of the N-doped graphene nanostructures increases. In addition, when the number of layers becomes elevated at low-energy resonances, the absorption spectra are seen to blue-shift. The plasmon energy resonance points are located in the visible and ultraviolet regions. The N-doped graphene provides an effective strategy for nanoscale plasmon devices in the visible and ultraviolet regions, despite their weaker absorption intensities when compared with the pristine graphene.

  1. Final report for CCS cross-layer reliability visioning study

    SciTech Connect

    Quinn, Heather M; Dehon, Andre; Carter, Nicj

    2010-12-20

    The geometric rate of improvement of transistor size and integrated circuit performance known as Moore's Law has been an engine of growth for our economy, enabling new products and services, creating new value and wealth, increasing safety, and removing menial tasks from our daily lives. Affordable, highly integrated components have enabled both life-saving technologies and rich entertainment applications. Anti-lock brakes, insulin monitors, and GPS-enabled emergency response systems save lives. Cell phones, internet appliances, virtual worlds, realistic video games, and mp3 players enrich our lives and connect us together. Over the past 40 years of silicon scaling, the increasing capabilities of inexpensive computation have transformed our society through automation and ubiquitous communications. Looking forward, increasing unpredictability threatens our ability to continue scaling integrated circuits at Moore's Law rates. As the transistors and wires that make up integrated circuits become smaller, they display both greater differences in behavior among devices designed to be identical and greater vulnerability to transient and permanent faults. Conventional design techniques expend energy to tolerate this unpredictability by adding safety margins to a circuit's operating voltage, clock frequency or charge stored per bit. However, the rising energy costs needed to compensate for increasing unpredictability are rapidly becoming unacceptable in today's environment where power consumption is often the limiting factor on integrated circuit performance and energy efficiency is a national concern. Reliability and energy consumption are both reaching key inflection points that, together, threaten to reduce or end the benefits of feature size reduction. To continue beneficial scaling, we must use a cross-layer, Jull-system-design approach to reliability. Unlike current systems, which charge every device a substantial energy tax in order to guarantee correct operation in

  2. Bottom boundary layer measurements in OMP. Final report

    SciTech Connect

    Gross, T.F.; Williams, A.J.

    1998-11-01

    The main role of the Benthic Acoustic Stress Sensor (BASS) tripods within the Ocean Margins Program experiments was to detect and quantify organic carbon rich particle transport off the shelf. This requires measures of the turbulent boundary layer flow and bed stress, the physical forcing of the particle transport, as well as the concentration and type of particles which are being transported. The BASS tripods were deployed at sites 17 and 26. Data from site 26 were recovered spanning three periods: Feb. 2--April 6, May 13--June 27, June 28--Aug. 18. Site 17 was occupied Feb. 12--april 11. The BASS tripods were arrayed with five BASS sensors measuring detailed velocity parameters within four meters of the seabed. Velocity time series indicate a usually weak tidal flow which produces small bed stress by itself. On the occasions when a strong flow, probably the Gulf Stream, crosses the area, the bed shear stress increases dramatically to as much as 10 dyne cm{sup {minus}2}. This is competent to move unconsolidated sediments in the area. Other instruments from the tripods include: two conductivity/temperature sensor pairs, five WetStar fluorometers, thermistors, transmissometer, optical backscatterence sensors and a pressure sensor.

  3. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    NASA Astrophysics Data System (ADS)

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-01

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (Ec-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (Ec-0.35 eV) and M4 (Ec-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  4. Effect of space layer doping on photoelectric conversion efficiency of InAs/GaAs quantum dot solar cells

    SciTech Connect

    Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu; Choi, Won Jun

    2015-11-16

    We report an effect of photoelectric conversion efficiency (PCE) by space layer doping in InAs/GaAs quantum dot solar cells (QDSC) and δ-doped QDSC grown by molecular beam epitaxy. The PCEs of QDSC and δ-doped QDSC without anti-reflection coating were 10.8% and 4.3%, respectively. The QDSC had about four electrons per QD, and its ideality factor was temperature-independent, which implies that recombination of electron-hole pairs is suppressed by strong potential barriers around charged dots. From the deep level transient spectroscopy measurements, four defect levels, including QD with the activation energy ranges from 0.08 eV to 0.50 eV below GaAs conduction band edge, appeared. Especially, the M1 defect (E{sub c}-0.14 eV) was newly formed in δ-doped QDSC and its density was higher than those of M3 (E{sub c}-0.35 eV) and M4 (E{sub c}-0.50 eV) levels in QDSC. These results suggest that the photo-carriers recombining at M1 defect might be responsible for the reduction of PCE in δ-doped QDSC.

  5. Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

    NASA Astrophysics Data System (ADS)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Bing; Wang, Cong; Yoon, Soon Fatt; Michel, Jurgen; Fitzgerald, Eugene A.; Tan, Chuan Seng

    2016-02-01

    High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400 °C), (ii) Ge growth with As gradually reduced to zero at high temperature (HT, at 650 °C), (iii) pure Ge growth at HT. This is followed by thermal cyclic annealing in hydrogen at temperature ranging from 600 to 850 °C. Analytical characterization have shown that the Ge epitaxial film with a thickness of ˜1.5 µm experiences thermally induced tensile strain of 0.20% with a treading dislocation density (TDD) of mid 106/cm2 which is one order of magnitude lower than the control group without As doping and surface roughness of 0.37 nm. The reduction in TDD is due to the enhancement in velocity of dislocations in an As-doped Ge film.

  6. A non-destructive n-doping method for graphene with precise control of electronic properties via atomic layer deposition.

    PubMed

    Han, Kyu Seok; Kalode, Pranav Y; Koo Lee, Yong-Eun; Kim, Hongbum; Lee, Lynn; Sung, Myung Mo

    2016-02-25

    Graphene applications require high precision control of the Fermi level and carrier concentration via a nondestructive doping method. Here, we develop an effective n-doping technique using atomic layer deposition (ALD) of ZnO thin films on graphene through a reactive molecular layer. This ALD doping method is nondestructive, simple, and precise. The ZnO thin films on graphene are uniform, conformal, of good quality with a low density of pinholes, and finely tunable in thickness with 1 Å resolution. We demonstrate graphene transistor control in terms of the Dirac point, carrier density, and doping state as a function of the ZnO thickness. Moreover, ZnO functions as an effective thin-film barrier against air-borne water and oxygen on the graphene, resulting in extraordinary stability in air for graphene devices. ZnO ALD was also applied to other two-dimensional materials including MoS2 and WSe2, which substantially enhanced electron mobility. PMID:26864992

  7. Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

    PubMed Central

    2013-01-01

    High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 × 10−4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration. PMID:23442766

  8. The Effect of Boron Doping on Structure and Electrochemical Performance of Lithium-Rich Layered Oxide Materials.

    PubMed

    Liu, Jiatu; Wang, Shuangbao; Ding, Zhengping; Zhou, Ruiqi; Xia, Qingbing; Zhang, Jinfang; Chen, Libao; Wei, Weifeng; Wang, Peng

    2016-07-20

    Polyanion doping shows great potential to improve electrochemical performance of Li-rich layered oxide (LLO) materials. Here, by optimizing the doping content and annealing temperature, we obtained boron-doped LLO materials Li1.2Mn0.54Ni0.13Co0.13BxO2 (x = 0.04 and 0.06) with comprehensively improved performance (94% capacity retention after 100 cycles at 60 mA/g current density and a rate capability much higher compared to that of the pristine sample) at annealing temperatures of 750 and 650 °C, respectively, which are much lower than the traditional annealing temperature of similar material systems without boron. The scenario of the complex crystallization process was captured using Cs-corrected high-angle annular dark field scanning transmission electron microscopic (HAADF-STEM) imaging techniques. The existence of layered, NiO-type, and spinel-like structures in a single particle induced by boron doping and optimization of annealing temperature is believed to contribute to the remarkable improvement of cycling stability and rate capability. PMID:27337243

  9. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes.

    PubMed

    Yoo, Yeon Woo; Jeon, Woojin; Lee, Woongkyu; An, Cheol Hyun; Kim, Seong Keun; Hwang, Cheol Seong

    2014-12-24

    The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the evolutions of their crystallographic phases, grain sizes, and electric properties, such as their dielectric constants and leakage current densities, were examined for their applications in high-voltage devices. The film thickness and Al-doping concentration were varied in the ranges of 60-75 nm and 0.5-9.7%, respectively, for AHO and 55-90 nm and 1.0-10.3%, respectively, for AZO. The top and bottom electrodes were sputtered Mo films. The detailed structural and electrical property variations were examined as functions of the Al concentration and film thickness. The AHO films showed a transition from the monoclinic phase (Al concentration up to 1.4%) to the tetragonal/cubic phase (Al concentration 2.0-3.5%), and finally, to the amorphous phase (Al concentration >4.7%), whereas the AZO films remained in the tetragonal/cubic phase up to the Al concentration of 6.4%. For both the AHO and AZO films, the monoclinic and amorphous phases had dielectric constants of 20-25, and the tetragonal/cubic phases had dielectric constants of 30-35. The highest electrical performance levels for the application to the high-voltage charge storage capacitors in flat panel displays were achieved with the 4.7-9.7% Al-doped AHO films and the 2.6% Al-doped AZO films. PMID:25423483

  10. Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics

    NASA Astrophysics Data System (ADS)

    Chen, Xiao-Bing; Hui, Rong; Zhu, Jun; Lu, Wang-Ping; Mao, Xiang-Yu

    2004-11-01

    Several polycrystalline samples of bismuth layer-structured ferroelectrics (BLSF) family doped by lanthanum, Bi4-xLaxTi3O12, SrBi4-xLaxTi4O15, Sr2Bi4-xLaxTi5O18, and (Bi,La)4Ti3O12-Sr(Bi,La)4Ti4O15, were prepared by the traditional solid-state reaction method. Their ferroelectric and dielectric properties were investigated. The dielectric measurement data showed that the content of lanthanum determined the ferroelectric characteristics of the compounds. In each series samples, they behaved as normal ferroelectrics for small x, but all of them tended to become relaxors when x was increased. The critical value of the La content causing relaxor characteristics is different for the different BLSFs due to the difference of the number of strontium atoms in their crystal structures. The appearance of the relaxor behavior was attributed to a ferroelectric microdomain state induced by random fields.

  11. Chromium and yttrium-doped magnesium aluminum oxides prepared from layered double hydroxides

    NASA Astrophysics Data System (ADS)

    García-García, J. M.; Pérez-Bernal, M. E.; Ruano-Casero, R. J.; Rives, V.

    2007-12-01

    Layered double hydroxides with the hydrotalcite-like structures, containing Mg 2+ and Al 3+, doped with Cr 3+ and Y 3+, have been prepared by precipitation at constant pH. The weight percentages of Cr 3+ and Y 3+ were 1, 2, or 3%, and 0.5 or 1%, respectively. Single phases were obtained in all cases, whose crystallinity decreased as the content in Cr and Y was increased. The solids have been characterised by element chemical analysis, powder X-ray diffraction, thermal analyses (differential, thermogravimetric and programmed reduction), FT-IR and UV-vis spectroscopies; the specific surface areas have been determined from nitrogen adsorption isotherms at -196 °C. Upon calcination at 1200 °C for 5 h in air all solids display a mixed structure (spinel and rock salt for MgO); these solids have also been characterised by these techniques and their chromatic coordinates (CIE - L∗a∗b∗) have been determined. Their pink colour makes these solids suitable for being used as ceramic pigments.

  12. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    DOE PAGESBeta

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorptionmore » fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.« less

  13. Electron transport in Al-doped ZnO nanolayers obtained by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Blagoev, B. S.; Dimitrov, D. Z.; Mehandzhiev, V. B.; Kovacheva, D.; Terziyska, P.; Pavlic, J.; Lovchinov, K.; Mateev, E.; Leclercq, J.; Sveshtarov, P.

    2016-03-01

    Al-doped ZnO thin films with different Al content were prepared by atomic layer deposition (ALD). To carry out thermal ALD, diethyl zinc (DEZ) and tri-methyl aluminium (TMA) were used as Zn and Al precursors, respectively, and water vapor as oxidant. Various numbers n of DEZ and m TMA cycles was used to obtain different [ZnO] n [Al2O3] m films, where n = 100 – 95, m = 1 – 5. The X-ray diffraction analysis showed a predominantly (100) oriented polycrystalline phase for the ZnO:Al films with a low Al content (m = 1 – 3) and an amorphous structure for pure Al2O3. In ZnO:Al with a higher Al content (m = 4 – 6) the (100) reflection disappeared and the (002) peak increased. The resistivity of the films decreased with the increase in the Al content, reaching a minimum of 3.3×10-3 Ω cm at about 1.1 % Al2O3 for the [ZnO]99[Al2O3]2 sample; for higher dopant concentrations, the resistivity increased because of the increased crystal inhomogeneity due to axis reorientation.

  14. Synthesis and characterization of P δ-layer in SiO2 by monolayer doping

    NASA Astrophysics Data System (ADS)

    Arduca, Elisa; Mastromatteo, Massimo; De Salvador, Davide; Seguini, Gabriele; Lenardi, Cristina; Napolitani, Enrico; Perego, Michele

    2016-02-01

    Achieving the required control of dopant distribution and selectivity for nanostructured semiconducting building block is a key issue for a large variety of applications. A promising strategy is monolayer doping (MLD), which consists in the creation of a well-ordered monolayer of dopant-containing molecules bonded to the surface of the substrate. In this work, we synthesize a P δ-layer embedded in a SiO2 matrix by MLD. Using a multi-technique approach based on time of flight secondary ion mass spectrometry (ToF-SIMS) and Rutherford backscattering spectrometry (RBS) analyses, we characterize the tuning of P dose as a function of the processing time and temperature. We found the proper conditions for a full grafting of the molecules, reaching a maximal dose of 8.3 × 1014 atoms/cm2. Moreover, using 1D rate equation model, we model P diffusion in SiO2 after annealing and we extract a P diffusivity in SiO2 of 1.5 × 1017 cm2 s-1.

  15. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    PubMed

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-01

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. PMID:25916491

  16. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    DOE PAGESBeta

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; et al

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which themore » materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.« less

  17. Cr-doped TiSe2 - A layered dichalcogenide spin glass

    SciTech Connect

    Luo, Huixia; Tao, Jing; Krizan, Jason W.; Seibel, Elizabeth M.; Xie, Weiwei; Sahasrabudhe, Girija S.; Bergman, Susanna L.; Phelan, Brendan F.; Wang, Zhen; Zhang, Jiandi; Cava, R. J.

    2015-09-17

    We report the magnetic characterization of the Cr-doped layered dichalcogenide TiSe2. The temperature dependent magnetic susceptibilities are typical of those seen in geometrically frustrated insulating antiferromagnets. The Cr moment is close to the spin-only value, and the Curie–Weiss temperatures (θcw) are between –90 and –230 K. Freezing of the spin system, which is glassy, characterized by peaks in the ac and dc susceptibility and specific heat, does not occur until below T/θcw = 0.05. The CDW transition seen in the resistivity for pure TiSe2 is still present for 3% Cr substitution but is absent by 10% substitution, above which the materials are metallic and p-type. Structural refinements, magnetic characterization, and chemical considerations indicate that the materials are of the type Ti1–xCrxSe2-x/2 for 0 ≤ x ≤ 0.6.

  18. High-surface-area nitrogen-doped reduced graphene oxide for electric double-layer capacitors

    SciTech Connect

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A.; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-08

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH₃ gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m²g⁻¹), high electrical conductivity (1532S m⁻¹), and low oxygen content (1.5 wt%) for electric double-layer capacitor applications. The specific capacitance of N-RGO was 291 Fg⁻¹ at a current density of 1 A g⁻¹, and a capacitance of 261 F g⁻¹ was retained at 50 A g⁻¹, indicating a very good rate capability. N-RGO also showed excellent cycling stability, preserving 96% of the initial specific capacitance after 100,000 cycles. Near-edge X-ray absorption fine-structure spectroscopy evidenced the recover of π-conjugation in the carbon networks with the removal of oxygenated groups and revealed the chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.

  19. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  20. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    NASA Astrophysics Data System (ADS)

    Lee, June Key; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo

    2015-05-01

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ˜35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  1. Photoluminescence of Sm doped porous silicon—evidence for light emission through luminescence centers in SiO2 layers

    NASA Astrophysics Data System (ADS)

    Lin, J.; Zhang, L. Z.; Huang, Y. M.; Zhang, B. R.; Qin, G. G.

    1994-06-01

    After oxidation promoted by gamma-ray irradiation, in the photoluminescence (PL) spectra of Sm doped porous silicon (PS), there are three sharp peaks, superimposed on a broad band, with wavelengths near to those of the Sm doped SiO2 [R. Morimo, T. Mizushima, and H. Okumura, J. Electrochem. Soc. 137, 2340 (1990)]. The experimental results indicate that Sm-related luminescence centers can be created within the oxide of porous silicon, and only in porous silicon with high porosity can the Sm-related luminescence be found in the SiO2 layer. This experimental result can be explained by the fact that the excitation of electron-hole pairs occurs in nanoscale silicon, and the recombination occurs at the Sm-related luminescence centers in SiO2 layers covering nanoscale silicon.

  2. Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

    SciTech Connect

    Khazanova, S. V. Degtyarev, V. E.; Tikhov, S. V.; Baidus, N. V.

    2015-01-15

    InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.

  3. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    DOE PAGESBeta

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; Logvenov, G.; Bozovic, I.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  4. Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants.

    PubMed

    Schießl, Stefan P; Faber, Hendrik; Lin, Yen-Hung; Rossbauer, Stephan; Wang, Qingxiao; Zhao, Kui; Amassian, Aram; Zaumseil, Jana; Anthopoulos, Thomas D

    2016-05-01

    An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated. PMID:26437002

  5. Optical reflectivity and Raman scattering in few-layer-thick graphene highly doped by K and Rb.

    PubMed

    Jung, Naeyoung; Kim, Bumjung; Crowther, Andrew C; Kim, Namdong; Nuckolls, Colin; Brus, Louis

    2011-07-26

    We report the optical reflectivity and Raman scattering of few layer (L) graphene exposed to K and Rb vapors. Samples many tens of layers thick show the reflectivity and Raman spectra of the stage 1 bulk alkali intercalation compounds (GICs) KC(8) and RbC(8). However, these bulk optical and Raman properties only begin to appear in samples more than about 15 graphene layers thick. The 1 L to 4 L alkali exposed graphene Raman spectra are profoundly different than the Breit-Wigner-Fano (BWF) spectra of the bulk stage 1 compounds. Samples less than 10 layers thick show Drude-like plasma edge reflectivity dip in the visible; alkali exposed few layer graphenes are significantly more transparent than intrinsic graphene. Simulations show the in-plane free electron density is lower than in the bulk stage 1 GICs. In few layer graphenes, alkalis both intercalate between layers and adsorb on the graphene surfaces. Charge transfer electrically dopes the graphene sheets to densities near and above 10(+14) electrons/cm(2). New intrinsic Raman modes at 1128 and 1264 cm(-1) are activated by in-plane graphene zone folding caused by strongly interacting, locally crystalline alkali adlayers. The K Raman spectra are independent of thickness for L = 1-4, indicating that charge transfer from adsorbed and intercalated K layers are similar. The Raman G mode is downshifted and significantly broadened from intrinsic graphene. In contrast, the Rb spectra vary strongly with L and show increased doping by intercalated alkali as L increases. Rb adlayers appear to be disordered liquids, while intercalated layers are locally crystalline solids. A significant intramolecular G mode electronic resonance Raman enhancement is observed in K exposed graphene, as compared with intrinsic graphene. PMID:21682332

  6. A Titanium-Doped SiOx Passivation Layer for Greatly Enhanced Performance of a Hematite-Based Photoelectrochemical System.

    PubMed

    Ahn, Hyo-Jin; Yoon, Ki-Yong; Kwak, Myung-Jun; Jang, Ji-Hyun

    2016-08-16

    This study introduces an in situ fabrication of nanoporous hematite with a Ti-doped SiOx passivation layer for a high-performance water-splitting system. The nanoporous hematite with a Ti-doped SiOx layer (Ti-(SiOx /np-Fe2 O3 )) has a photocurrent density of 2.44 mA cm(-2) at 1.23 VRHE and 3.70 mA cm(-2) at 1.50 VRHE . When a cobalt phosphate co-catalyst was applied to Ti-(SiOx /np-Fe2 O3 ), the photocurrent density reached 3.19 mA cm(-2) at 1.23 VRHE with stability, which shows great potential of the use of the Ti-doped SiOx layer with a synergistic effect of decreased charge recombination, the increased number of active sites, and the reduced hole-diffusion pathway from the hematite to the electrolyte. PMID:27358249

  7. Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

    SciTech Connect

    Tsai, Jung-Hui Ye, Sheng-Shiun; Guo, Der-Feng; Lour, Wen-Shiung

    2012-04-15

    Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.

  8. Properties of planar Nb/{alpha}-Si/Nb Josephson junctions with various degrees of doping of the {alpha}-Si layer

    SciTech Connect

    Gudkov, A. L.; Kupriyanov, M. Yu.; Samus', A. N.

    2012-05-15

    The properties of Nb/{alpha}-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change substantially when the degree of doping of the {alpha}-Si layer changes: a current transport mechanism and the shape of the current-voltage characteristic of the junctions change. Josephson junctions with SNS-type conduction are formed in the case of a fully degenerate {alpha}-Si layer. The properties of such junctions are described by a classical resistive model. Josephson junctions with a resonance mechanism of current transport through impurity centers are formed at a lower degree of doping of the {alpha}-Si layer. The high-frequency properties of such junctions are shown to change. The experimental results demonstrate that these junctions are close to SINIS-type Josephson junctions.

  9. Super-fast switching of liquid crystals sandwiched between highly conductive graphene oxide/dimethyl sulfate doped PEDOT:PSS composite layers

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Zhang, Yifan; Oh, Byeong-Yun; Seo, Dae-Shik; Li, Xiangdan

    2016-05-01

    Graphene oxide (GO)-doped dimethyl sulfate (DMS)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) superconductive alignment layer, aligning liquid crystals (LCs) with super switching and non-residual direct current (non-residual DC) performance, is presented in this manuscript. Doping of GO increased the pristine polar energy of a thin composite layer as well as the corresponding anchoring energy of the LCs sandwiched between these thin layers but only slightly affected the thin layers' morphology. When rubbed GO/DMS/PEDOT:PSS composite layers were used as alignment layers, a homogeneous alignment of nematic LCs was observed with competitive optoelectrical switching properties and non-residual DC performance because of the enhanced field effect and charge transport induced by the doped GO.

  10. Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

    NASA Astrophysics Data System (ADS)

    Lin, Wen-Kai; Su, Shui-Hsiang; Yeh, Meng-Cheng; Huang, Yang-Chan; Yokoyama, Meiso

    2016-01-01

    Solution-processed titanium-doped ZnO (TZO) is synthesized by the sol-gel method to be the electron-transporting layer (ETL) in an inverted organic solar cell (IOSC). Carbon nanotubes (CNTs) are doped into an active layer of poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM). The addition of CNTs in the P3HT:PCBM composite increases the conjugation length of P3HT:PCBM:CNTs, which simultaneously enhances the capacity of the composite to absorb solar energy radiation. Vanadium oxide (V2O5) was spin-coated onto the active layer to be a hole-transporting layer (HTL). The power conversion efficiency (PCE) results indicate that the V2O5 nanobelt structure possesses better phase separation and provides a more efficient surface area for the P3HT:PCBM:CNT active layer to increase photocurrent. The optimized IOSCs exhibited an open circuit voltage (Voc), a short-circuit current density (Jsc), a fill factor (FF), and a PCE of 0.55 V, 6.50 mA/cm2, 58.34%, and 2.20%, respectively, under simulated AM1.5G illumination of 100 mW/cm2.

  11. Highly efficient tandem organic light-emitting devices utilizing the connecting structure based on n-doped electron-transport layer/HATCN/hole-transport layer.

    PubMed

    Wu, Yi-Lin; Chen, Chien-Yu; Huang, Yi-Hsiang; Lu, Yin-Jui; Chou, Cheng-Hsu; Wu, Chung-Chih

    2014-08-01

    In this work, we conducted studies of tandem organic light-emitting devices (OLEDs) based on the connecting structure consisting of n-doped electron-transport layer (n-ETL)/1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN)/hole-transport layer. We investigated effects of different n-ETL materials and different HATCN thicknesses on characteristics of tandem OLEDs. Results show that the tandem OLEDs with n-BPhen and a 20 nm layer of HATCN in the connecting structure exhibited the best performance. With these, highly efficient and bright green phosphorescent two-emitting-unit tandem OLEDs, with drive voltages significantly lower than twice that of the single-unit benchmark device and current efficiencies higher than twice that of the single-unit benchmark device, were demonstrated. PMID:25090347

  12. Lead-nano-dopings effects on the structural, microstructural, vibrational and thermal properties of Bi 2- xPb xSrV 2O 9 layered perovskite

    NASA Astrophysics Data System (ADS)

    Elsabawy, Khaled M.; Abou Sekkina, Morsy M.; Asker, Mohamed A.; El-Newehy, Mohamed H.

    2010-07-01

    The sample with in the general formula Bi 2-xPb xSrV 2O 9, where x = 0.0, 0.05, 0.1, 0.2, 0.3, and 0.6 mol were synthesized by the high temperature solid state reaction and firing method. The X-ray diffractograms confirmed the formation of single phased layered perovskite in all samples. TGA and DTA thermal analyses on the green samples included steps of thermal analysis of strontium carbonate, bismuth carbonate, ammonium vanadate, lead oxide and finally on the high temperature solid state formation. The effect of lead dopings on the sintering, structural and micro-structure, properties of 212BiSrV-ceramics were investigated. The infrared absorption spectra show a series of vibrational modes within the range of 400-1600 cm -1.

  13. Density functional study on the hole doping of single-layer SnS2 with metal element X (X = Li, Mg, and Al).

    PubMed

    Yu, Dandan; Liu, Yanyu; Sun, Lili; Wu, Ping; Zhou, Wei

    2016-01-01

    The effects of metal element X-doping on the electronic and optical properties of single-layer SnS2 were investigated using density functional theory. The results show that the doping is energetically more favorable under S-rich conditions than under Sn-rich conditions. For Li and Mg doping, there is the existence of ionic bonding between the dopants and adjacent S atoms, and the systems exhibit magnetic ground states. However, covalent bonding character is observed in Al-doped single-layer SnS2, and the system exhibits non-magnetic ground states. The optical properties show that the optical absorptions are anisotropic for all doping cases. The X doping not only results in a red shift of the absorption edges, but also enhances the effective utilization in the near-infrared light region. Additionally, Li-doped single-layer SnS2 is active for overall water splitting under visible light radiation whereas Mg and Al-doped SnS2 are only suitable for oxygen evolution. PMID:26611638

  14. Surface modification of nitrogen-doped carbon nanotubes by ozone via atomic layer deposition

    SciTech Connect

    Lushington, Andrew; Liu, Jian; Tang, Yongji; Li, Ruying; Sun, Xueliang

    2014-01-15

    The use of ozone as an oxidizing agent for atomic layer deposition (ALD) processes is rapidly growing due to its strong oxidizing capabilities. However, the effect of ozone on nanostructured substrates such as nitrogen-doped multiwalled carbon nanotubes (NCNTs) and pristine multiwalled carbon nanotubes (PCNTs) are not very well understood and may provide an avenue toward functionalizing the carbon nanotube surface prior to deposition. The effects of ALD ozone treatment on NCNTs and PCNTs using 10 wt. % ozone at temperatures of 150, 250, and 300 °C are studied. The effect of ozone pulse time and ALD cycle number on NCNTs and PCNTs was also investigated. Morphological changes to the substrate were observed by scanning electron microscopy and high resolution transmission electron microscopy. Brunauer-Emmett-Teller measurements were also conducted to determine surface area, pore size, and pore size distribution following ozone treatment. The graphitic nature of both NCNTs and PCNTs was determined using Raman analysis while x-ray photoelectron spectroscopy (XPS) was employed to probe the chemical nature of NCNTs. It was found that O{sub 3} attack occurs preferentially to the outermost geometric surface of NCNTs. Our research also revealed that the deleterious effects of ozone are found only on NCNTs while little or no damage occurs on PCNTs. Furthermore, XPS analysis indicated that ALD ozone treatment on NCNTs, at elevated temperatures, results in loss of nitrogen content. Our studies demonstrate that ALD ozone treatment is an effective avenue toward creating low nitrogen content, defect rich substrates for use in electrochemical applications and ALD of various metal/metal oxides.

  15. A new self-assembled layer-by-layer glucose biosensor based on chitosan biopolymer entrapped enzyme with nitrogen doped graphene.

    PubMed

    Barsan, Madalina M; David, Melinda; Florescu, Monica; Ţugulea, Laura; Brett, Christopher M A

    2014-10-01

    The layer-by-layer (LbL) technique has been used for the construction of a new enzyme biosensor. Multilayer films containing glucose oxidase, GOx, and nitrogen-doped graphene (NG) dispersed in the biocompatible positively-charged polymer chitosan (chit(+)(NG+GOx)), together with the negatively charged polymer poly(styrene sulfonate), PSS(-), were assembled by alternately immersing a gold electrode substrate in chit(+)(NG+GOx) and PSS(-) solutions. Gravimetric monitoring during LbL assembly by an electrochemical quartz microbalance enabled investigation of the adsorption mechanism and deposited mass for each monolayer. Cyclic voltammetry and electrochemical impedance spectroscopy were used to characterize the LbL modified electrodes, in order to establish the contribution of each monolayer to the overall electrochemical properties of the biosensor. The importance of NG in the biosensor architecture was evaluated by undertaking a comparative study without NG in the chit layer. The GOx biosensor's analytical properties were evaluated by fixed potential chronoamperometry and compared with similar reported biosensors. The biosensor operates at a low potential of -0.2V vs., Ag/AgCl, exhibiting a high sensitivity of 10.5 μA cm(-2) mM(-1), and a detection limit of 64 μM. This study shows a simple approach in developing new biosensor architectures, combining the advantages of nitrogen-doped graphene with the LbL technique for enzyme immobilization. PMID:24997303

  16. Driving voltage reduction in white organic light-emitting devices from selectively doping in ambipolar blue-emitting layer

    NASA Astrophysics Data System (ADS)

    Hsiao, Chih-Hung; Lin, Chi-Feng; Lee, Jiun-Haw

    2007-11-01

    White organic light-emitting devices (OLEDs) consisting of ambipolar 9,10-bis(2'-naphthyl) anthracene (ADN) as a host of blue-emitting layer (EML) were investigated. A thin codoped layer of yellow 5,6,11,12-Tetraphenylnaphthacene (rubrene) served as a probe for detecting the position of maximum recombination rate in the 4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl (DPAVBi) doped-ADN EML. Due to the energy barrier and bipolar carrier transport, the maximum recombination rate was found to be close to but not exactly at the interface of the hole-transporting layer and the EML. With appropriate tuning in the thickness, position, and dopant concentrations of the codoped layer (rubrene:DPAVBi:ADN) in the EML, the device driving voltage decreased by 21.7%, nearly 2 V in reduction, due to the increased recombination current from the faster exciton relaxation induced by the yellow dopants. Among the advantages of introducing the codoped layer over conventional single-doped layers are the elimination of the trapping effect to avoid increasing the device driving voltage, the alleviation of the dependence of the recombination zone on the applied voltage for improving color stability, and the utilization of excitons in a more efficient way to enhance device efficiency. Without using any electrically conductive layers such as the p-i-n structure, we were able to successfully generate 112 cd/m2 at 4 V from our white OLED simply by engineering the structure of the EML.

  17. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    SciTech Connect

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  18. Eu(3+)-doped NaGdF4 nanocrystal down-converting layer for efficient dye-sensitized solar cells.

    PubMed

    Shen, Jie; Li, Zhiqiang; Cheng, Rui; Luo, Qi; Luo, Yudan; Chen, Yiwei; Chen, Xiaohong; Sun, Zhuo; Huang, Sumei

    2014-10-22

    We present for the first time the synthesis of Eu(3+)-doped β-phase sodium gadolinium fluoride (NaGdF4:Eu) nanocrystals (NCs) using a hydrothermal method and the application of down conversion (DC) NaGdF4:Eu NCs to efficient dye-sensitized solar cells (DSSCs). The as-prepared NaGdF4:Eu(3+) NCs were characterized by X-ray diffraction, photoluminescence spectrometry, and scanning and transmission electron microscopy. DC layers consisting of poly(methyl methacrylate) (PMMA) doped with luminescent NaGdF4:Eu(3+) were prepared and attached onto the back of a prefabricated TiO2 anode to form a more efficient DSSC, compared with a device based on a pure TiO2 electrode. The influences of both doped and undoped NaGdF4 NC layers on the photovoltaic devices were compared and evaluated by the measurement of the device's incident-photon-to-current efficiency (IPCE). An obvious increase in IPCE was observed when the DC layer was added in the device. As the down-converted photons can be reabsorbed within DSSCs to generate photocurrent, the DSSC with a 100 nm thick NaGdF4:Eu(3+) DC-PMMA layer improved photoelectric conversion efficiency by 4.5% relative to the uncoated solar cell. The experiments conclude that NaGdF4:Eu(3+) nanocrystals mainly act as luminescent DC centers and light scatterers in the ultraviolet and visible domains, respectively, for enhancing the spectral response of the device in the measured spectral regime. PMID:25269703

  19. Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

    NASA Astrophysics Data System (ADS)

    Jang, Cholho; Zhizhen, Ye; Jianguo, Lü

    2015-12-01

    Ga doped ZnO (GZO)/Cu grid double layer structures were prepared at room temperature (RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit (ΦTC = 6.19 × 10-3 Ω-1) was obtained. In this case, the transmittance, resistivity and filling factor (FF) of the GZO/Cu grid double layer are 83.74%, 1.10 × 10-4 Ω·cm and 0.173, respectively. Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020).

  20. Improving efficiency of silicon solar cells using europium-doped silicate-phosphor layer by spin-on film coating

    NASA Astrophysics Data System (ADS)

    Ho, Wen-Jeng; Yang, Guo-Chang; Shen, Yu-Tang; Deng, Yu-Jie

    2016-03-01

    This paper reports impressive enhancements in the efficiency of crystalline silicon solar cells through the application of a Eu-doped silicate phosphor luminescent downshifting (LDS) layer controlled by spin-on film technique. Surface morphology was examined using scanning electron microscope (SEM), chemical composition was analyzed using energy dispersive spectroscopy (EDS), and fluorescence emission was characterized using photoluminescence (PL) measurements at room temperature. The optical reflectance, absorbance, and external quantum efficiency (EQE) response of SiO2-coated cells with and without Eu-doped silicate phosphor were measured and compared. An 18.77% improvement in efficiency was achieved, as determined by photovoltaic current-voltage measurement under one-sun AM 1.5 G illuminations.

  1. Metal-Doped Silver Oxide Films as a Mask Layer for the Super-RENS Disk

    NASA Astrophysics Data System (ADS)

    Shima, Takayuki; Buechel, Dorothea; Mihalcea, Christophe; Kim, Jooho; Atoda, Nobufumi; Tominaga, Junji

    Various kinds of metal (Co, Pd, Pt and Au) were doped into Ag2O and AgO sputtered films to study its effect on the thermal decomposition process. The oxygen composition ratio was evaluated by the X-ray fluorescence spectroscopy method after annealing up to 260,oC. The optical transmittance change was measured during heating of the film to 600,oC. Noble metal doping was found to modify the AgO decomposition process, and the oxygen content decreased gradually compared to the undoped case. Super-RENS disks with a metal-doped AgO mask were prepared, and the laser power necessary for super-resolutional readout was evaluated. It slightly shifted to the higher-power side when the noble metal was doped, and this agrees with the modification of the decomposition process.Japan Science and Technology Corporation, Domestic Research Fellow

  2. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

    SciTech Connect

    Dementyev, P. A.; Dunaevskii, M. S. Samsonenko, Yu. B.; Cirlin, G. E.; Titkov, A. N.

    2010-05-15

    A technique for measurement of longitudinal current-voltage characteristics of semiconductor nanowhiskers remaining in contact with the growth surface is suggested. The technique is based on setting up a stable conductive contact between the top of a nanowhisker and the probe of an atomic-force microscope. It is demonstrated that, as the force pressing the probe against the top of the nanowhisker increases, the natural oxide layer covering the top is punctured and a direct contact between the probe and the nanowhisker body is established. In order to prevent nanowhiskers from bending and, ultimately, breaking, they need to be somehow fixed in space. In this study, GaAs nanowhiskers were kept fixed by partially overgrowing them with a GaAs layer. To isolate nanowhiskers from the matrix they were embedded in, they were coated by a nanometer layer of AlGaAs. Doping of GaAs nanowhiskers with silicon was investigated. The shape of the current-voltage characteristics obtained indicates that introduction of silicon leads to p-type conduction in nanowhiskers, in contrast to n-type conduction in bulk GaAs crystals grown by molecular-beam epitaxy. This difference is attributed to the fact that the vapor-liquid-solid process used to obtain nanowhiskers includes a final stage of liquid-phase epitaxy, a characteristic of the latter being p-type conduction obtained in bulk GaAs(Si) crystals.

  3. A solution-doped small molecule hole transport layer for efficient ITO-free organic solar cells (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Bormann, Ludwig; Selzer, Franz; Leo, Karl; Mueller-Meskamp, Lars

    2015-10-01

    Indium-tin-oxide-free (ITO-free) organic solar cells are an important, emerging research field because ITO transparent electrodes are a bottleneck for cheap large area devices on flexible substrates. Among highly conductive PEDOT:PSS and metal grids, percolation networks made of silver nanowires (AgNW) with a diameter in the nanoscale show a huge potential due to easy processing (e.g. spray coating), high aspect ratios and excellent electrical and optical properties like 15 Ohm/sq with a transmission of 83.5 % including the substrate. However, the inherent surface roughness of the AgNW film impedes the implementation as bottom electrode in organic devices, especially fully vacuum deposited ones, where often shunts are obtained. Here, we report about the solution processing of a small molecule hole transport layer (s-HTL) comprising N,N'-((Diphenyl-N,N'-bis)9,9,-dimethyl-fluoren-2-yl)-benzidine (BF-DPB, host material) and the proprietary NDP9 (p-dopant) deposited from tetrahydrofuran (THF) as non-halogenated, "green" solvent. We show, that the doping process already takes place in solution and that conductivities, achieved with this process at high doping efficiencies (4 * 10^-4 S/cm at 10 wt% doping concentration), are comparable to thermal co-evaporation of BF-DPB:NDP9 under high vacuum, which is the proven deposition method for doped small molecule films. Applying this s-HTL to AgNW films leads to well smoothened electrodes, ready for application in organic devices. Vacuum-deposited organic p-i-n solar cells with DCV2-5T-Me(3:3):C60 as active layer show a power conversion efficiency of 4.4% and 3.7% on AgNW electrode with 35nm and 90 nm wire diameter, compared to 4.1% on ITO with the s-HTL.

  4. Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

    SciTech Connect

    Tamargo, M. C.; Neumark, G. F.

    2004-04-19

    It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.

  5. Engineering lattice matching, doping level, and optical properties of KY(WO4)2:Gd, Lu, Yb layers for a cladding-side-pumped channel waveguide laser

    NASA Astrophysics Data System (ADS)

    Aravazhi, Shanmugam; Geskus, Dimitri; van Dalfsen, Koop; Vázquez-Córdova, Sergio A.; Grivas, Christos; Griebner, Uwe; García-Blanco, Sonia M.; Pollnau, Markus

    2013-05-01

    Single-crystalline KY1- x-y-z GdxLuyYbz(WO4)2 layers are grown onto undoped KY(WO4)2 substrates by liquid-phase epitaxy. The purpose of co-doping the KY(WO4)2 layer with suitable fractions of Gd3+ and Lu3+ is to achieve lattice-matched layers that allow us to engineer a high refractive-index contrast between waveguiding layer and substrate for obtaining tight optical mode confinement and simultaneously accommodate a large range of Yb3+ doping concentrations by replacing Lu3+ ions of similar ionic radius for a variety of optical amplifier or laser applications. Crack-free layers, up to a maximum lattice mismatch of ~0.08 %, are grown with systematic variations of Y3+, Gd3+, Lu3+, and Yb3+ concentrations, their refractive indices are measured at several wavelengths, and Sellmeier dispersion curves are derived. The influence of co-doping on the spectroscopy of Yb3+ is investigated. As evidenced by the experimental results, the lattice constants, refractive indices, and transition cross-sections of Yb3+ in these co-doped layers can be approximated with good accuracy by weighted averages of data from the pure compounds. The obtained information is exploited to fabricate a twofold refractive-index-engineered sample consisting of a highly Yb3+-doped tapered channel waveguide embedded in a passive planar waveguide, and a cladding-side-pumped channel waveguide laser is demonstrated.

  6. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  7. A SnO2-samarium doped ceria additional anode layer in a direct carbon fuel cell

    NASA Astrophysics Data System (ADS)

    Yu, Baolong; Zhao, Yicheng; Li, Yongdan

    2016-02-01

    The role of a SnO2-samarium doped ceria (SDC) additional anode layer in a direct carbon fuel cell (DCFC) with SDC-(Li0.67Na0.33)2CO3 composite electrolyte and lithiated NiO-SDC-(Li0.67Na0.33)2CO3 composite cathode is investigated and compared with a NiO-SDC extra anode layer. Catalytic grown carbon fiber mixed with (Li0.67Na0.33)2CO3 is used as a fuel. At 750 °C, the maximum power outputs of 192 and 143 mW cm-2 are obtained by the cells with SnO2-SDC and NiO-SDC layers, respectively. In the SnO2-SDC layer, the reduction of SnO2 and the oxidation of Sn happen simultaneously during the cell operation, and the Sn/SnO2 redox cycle provides an additional route for fuel conversion. The formation of an insulating dense interlayer between the anode and electrolyte layers, which usually happens in DCFCs with metal anodes, is avoided in the cell with the SnO2-SDC layer, and the stability of the cell is improved consequently.

  8. Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

    PubMed Central

    Georgieva, Biliana; Podolesheva, Irena; Spasov, Georgy; Pirov, Jordan

    2014-01-01

    In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers' surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties. PMID:24854359

  9. Well-aligned Nd-doped SnO2 nanorod layered arrays: preparation, characterization and enhanced alcohol-gas sensing performance.

    PubMed

    Qin, Guohui; Gao, Fan; Jiang, Qiuping; Li, Yuehua; Liu, Yongjun; Luo, Li; Zhao, Kang; Zhao, Heyun

    2016-02-21

    Well-oriented neodymium doped SnO2 layered nanorod arrays were synthesized by a substrate-free hydrothermal route using sodium stannate and sodium hydroxide at 210 °C. The morphology and phase structure of the Nd-doped SnO2 nanoarrays were investigated by X-ray powder diffraction spectroscopy, scanning electron microscopy, transmission electron microscopy, Raman scattering spectroscopy, X-ray photoelectron spectroscopy and the BET method. The results demonstrated that the Nd-doped SnO2 layered nanorod arrays showed a unique nanostructure combined together with double layered arrays of nanorods with a diameter of 12 nm and a length of several hundred nanometers. The Nd-doped layered SnO2 nanoarrays kept the crystal structure of the bulk SnO2 and possessed more surface defects caused by the Nd ions doped into the SnO2 lattice. The Nd dopant acts as a crystallite growth inhibitor to prevent the growth of SnO2 nanorods. An investigation into the gas-sensing properties indicated that the optimized doping level of 3.0 at% Nd-doped SnO2 layered nanorod arrays exhibited an excellent sensing response toward alcohol at a lower temperature of 260 °C. The enhanced sensor performance was attributed to the higher specific surface area, multi-defect surface structure and the excellent catalytic properties of Nd dopant that is able to increase the amount of active sites on the surface of semiconducting oxides. The Nd-doped SnO2 nanoarray sensors were considered to be a promising candidate for trace alcohol detections in environmental gas monitoring. PMID:26863493

  10. Doped lanthanum nickelates with a layered perovskite structure as bifunctional cathode catalysts for rechargeable metal-air batteries.

    PubMed

    Jung, Kyu-Nam; Jung, Jong-Hyuk; Im, Won Bin; Yoon, Sukeun; Shin, Kyung-Hee; Lee, Jong-Won

    2013-10-23

    Rechargeable metal-air batteries have attracted a great interest in recent years because of their high energy density. The critical challenges facing these technologies include the sluggish kinetics of the oxygen reduction-evolution reactions on a cathode (air electrode). Here, we report doped lanthanum nickelates (La2NiO4) with a layered perovskite structure that serve as efficient bifunctional electrocatalysts for oxygen reduction and evolution in an aqueous alkaline electrolyte. Rechargeable lithium-air and zinc-air batteries assembled with these catalysts exhibit remarkably reduced discharge-charge voltage gaps (improved round-trip efficiency) as well as high stability during cycling. PMID:24053465

  11. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

    SciTech Connect

    Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna; Niemelä, Janne-Petteri; Karppinen, Maarit

    2015-01-15

    Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

  12. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    NASA Astrophysics Data System (ADS)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  13. Sulfur and nitrogen co-doped, few-layered graphene oxide as a highly efficient electrocatalyst for the oxygen-reduction reaction.

    PubMed

    Xu, Jiaoxing; Dong, Guofa; Jin, Chuanhong; Huang, Meihua; Guan, Lunhui

    2013-03-01

    S and N co-doped, few-layered graphene oxide is synthesized by using pyrimidine and thiophene as precursors for the application of the oxygen reduction reaction (ORR). The dual-doped catalyst with pyrrolic/graphitic N-dominant structures exhibits competitive catalytic activity (10.0 mA cm(-2) kinetic-limiting current density at -0.25 V) that is superior to that for mono N-doped carbon nanomaterials. This is because of a synergetic effect of N and S co-doping. Furthermore, the dual-doped catalyst also shows an efficient four-electron-dominant ORR process, which has excellent methanol tolerance and improved durability in comparison to commercial Pt/C catalysts. PMID:23404829

  14. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1- x Sn x epitaxial layer

    NASA Astrophysics Data System (ADS)

    Jeon, Jihee; Asano, Takanori; Shimura, Yosuke; Takeuchi, Wakana; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2016-04-01

    We examined the molecular beam epitaxy of Ge1- x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1- x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 1020 cm-3 remarkably improves the crystallinity, and surface uniformity of the Ge1- x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1- x Sn x growth with in situ Sb doping realizes a very high electron concentration of 1020 cm-3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.

  15. Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

    NASA Astrophysics Data System (ADS)

    Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

    2016-02-01

    The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

  16. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  17. Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy

    SciTech Connect

    Salokatve, A.; Toivonen, M.; Asonen, H.; Pessa, M.; Likonen, J.

    1996-12-31

    The authors have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was used as a source material for carbon evaporation. GaInAs was studied due to its importance as a base layer in InP-based heterojunction bipolar transistors. They show that useful p-type acceptor concentrations can be achieved by evaporation from graphite source for GaInAs grown by gas-source molecular beam epitaxy. Secondary ion mass spectroscopy and Van der Pauw Hall measurements were used to characterize the carbon and net acceptor concentrations of their GaInAs layers. The effect of rapid thermal annealing on acceptor concentrations and Hall mobilities was also studied.

  18. Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

    SciTech Connect

    Nishiguchi, M.; Hashinaga, T.; Nishizawa, H.; Hayashi, H. ); Okazaki, N. ); Kitagawa, M.; Fujino, T. )

    1990-12-01

    A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total {gamma}-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total {gamma}-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 {times} 10{sup 18} cm{sup {minus}3}, 100 {Angstrom}) grown by OMVPE. This MESFET can withstand a dose ten times higher (1 {times} 10{sup 9} rads(GaAs)) than a conventional one can.

  19. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  20. Boron Doped Nanocrystalline Film with Improved Work Function as a Buffer Layer in Thin Film Silicon Solar Cells.

    PubMed

    Park, Jinjoo; Shin, Chonghoon; Park, Hyeongsik; Jung, Junhee; Lee, Youn-Jung; Bong, Sungjae; Dao, Vinh Ai; Balaji, Nagarajan; Yi, Junsin

    2015-03-01

    We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (σ(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with σ(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (η) were improved by 3.7%, 9.2%, and 9.8%, respectively. PMID:26413646

  1. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal.

    PubMed

    Seo, J J; Kim, B Y; Kim, B S; Jeong, J K; Ok, J M; Kim, Jun Sung; Denlinger, J D; Mo, S-K; Kim, C; Kim, Y K

    2016-01-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3. PMID:27050161

  2. Imaging of Compressed Pure-CH Shells and CH Shells with Titanium-Doped Layers on OMEGA

    NASA Astrophysics Data System (ADS)

    Smalyuk, V. A.; Yaakobi, B.; Goncharov, V. N.; Delettrez, J. A.; Marshall, F. J.; Meyerhofer, D. D.

    1999-11-01

    The compressed shell integrity of spherical targets has been studied using the 60-beam, 30-kJ UV, OMEGA laser system. The emission from the hot core has been imaged through the cold shell at two narrow, x-ray energy bands, absorbing and nonabsorbing by the shell, allowing nonuniformities in the core emission and the cold shell areal density to be measured. Images of the target have been obtained using a pinhole-array with K-edge filters. The x-ray energies used are around 2.8 and 4.5 keV for pure-CH shells, and around 4.5 and 6 keV for titanium-doped layers. Additional images of the shell are obtained with a framed monochromatic x-ray microscope and a time-integrated crystal-spectrometer/pinhole-array combination. We will present measurements of the compressed shell integrity at the stagnation stage of spherical implosions by varying the position of the titanium-doped layer within the shell, by varying the thickness of the CH shell, and by using two different laser pulse shapes. The experimental results will be compared with 2-D (ORCHID) hydrodynamic simulations. This work was supported by the U.S. Department of Energy Office of Inertial Confinement Fusion under Cooperative Agreement No. DE-FC03-92SF19460, the University of Rochester, and the New York State Energy Research and Development Authority.

  3. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    PubMed Central

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S. -K.; Kim, C.; Kim, Y. K.

    2016-01-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3. PMID:27050161

  4. Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

    NASA Astrophysics Data System (ADS)

    Seo, J. J.; Kim, B. Y.; Kim, B. S.; Jeong, J. K.; Ok, J. M.; Kim, Jun Sung; Denlinger, J. D.; Mo, S.-K.; Kim, C.; Kim, Y. K.

    2016-04-01

    A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3.

  5. Doped Y.sub.2O.sub.3 buffer layers for laminated conductors

    DOEpatents

    Paranthaman, Mariappan Parans [Knoxville, TN; Schoop, Urs [Westborough, MA; Goyal, Amit [Knoxville, TN; Thieme, Cornelis Leo Hans [Westborough, MA; Verebelyi, Darren T [Oxford, MA; Rupich, Martin W [Framingham, MA

    2007-08-21

    A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y.sub.2O.sub.3 and a dopant for blocking cation diffusion through the Y.sub.2O.sub.3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

  6. Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Umana-Membreno, G. A.; Parish, G.; Fichtenbaum, N.; Keller, S.; Mishra, U. K.; Nener, B. D.

    2008-05-01

    Electrically active defects in n-GaN films grown with and without an Fe-doped buffer layer have been investigated using conventional and optical deep-level transient spectroscopy (DLTS). Conventional DLTS revealed three well- defined electron traps with activation energies E a of 0.21, 0.53, and 0.8 eV. The concentration of the 0.21 and 0.8 eV defects was found to be slightly higher in the sample without the Fe-doped buffer, whereas the concentration of the 0.53 eV trap was higher in the sample with the Fe-doped buffer. A minority carrier trap with E a ≈ 0.65 eV was detected in both samples using optical DLTS; its concentration was ˜40% higher in the sample without the Fe-doped buffer. Mobility spectrum analysis and multiple magnetic-field measurements revealed that the electron mobility in the topmost layer of both samples was similar, but that the sample without the Fe-doped buffer layer was affected by parallel conduction through underlying layers with lower electron mobility.

  7. Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

    PubMed Central

    Gonnelli, R. S.; Paolucci, F.; Piatti, E.; Sharda, Kanudha; Sola, A.; Tortello, M.; Nair, Jijeesh R.; Gerbaldi, C.; Bruna, M.; Borini, S.

    2015-01-01

    The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different temperatures and in view of the theoretically predicted possibility to reach the superconducting state in such extreme conditions. Here we present the results obtained in 3-, 4- and 5-layer graphene devices down to 3.5 K, where a large surface charge density up to about 6.8·1014 cm−2 has been reached by employing a novel polymer electrolyte solution for the electrochemical gating. In contrast with recent results obtained in single-layer graphene, the temperature dependence of the sheet resistance between 20 K and 280 K shows a low-temperature dominance of a T2 component – that can be associated with electron-electron scattering – and, at about 100 K, a crossover to the classic electron-phonon regime. Unexpectedly, this crossover does not show any dependence on the induced charge density, i.e. on the large tuning of the Fermi energy. PMID:25906088

  8. Rational Design of Efficient Electrocatalysts for Hydrogen Evolution Reaction: Single Layers of WS2 Nanoplates Anchored to Hollow Nitrogen-Doped Carbon Nanofibers.

    PubMed

    Yu, Sunmoon; Kim, Jaehoon; Yoon, Ki Ro; Jung, Ji-Won; Oh, Jihun; Kim, Il-Doo

    2015-12-30

    To exploit the benefits of nanostructuring for enhanced hydrogen evolution reaction (HER), we employed coaxial electrospinning to synthesize single-layered WS2 nanoplates anchored to hollow nitrogen-doped carbon nanofibers (WS2@HNCNFs) as efficient electrocatalysts. For comparison, bulk WS2 powder and single layers of WS2 embedded in nitrogen-doped carbon nanofibers (WS2@NCNFs) were synthesized and electrochemically tested. The distinctive design of the WS2@HNCNFs enables remarkable electrochemical performances showing a low overpotential with reduced charge transfer resistance, a small Tafel slope, and excellent durability. The experimental results highlight the importance of nanostructure engineering in electrocatalysts for enhanced HER. PMID:26654256

  9. AlO x /LiF composite protection layer for Cr-doped (Bi,Sb)2Te3 quantum anomalous Hall films

    NASA Astrophysics Data System (ADS)

    Ou, Yunbo; Feng, Yang; Feng, Xiao; Hao, Zhenqi; Zhang, Liguo; Liu, Chang; Wang, Yayu; He, Ke; Ma, Xucun; Xue, Qikun

    2016-08-01

    We have realized robust quantum anomalous Hall samples by protecting Cr-doped (Bi,Sb)2Te3 topological insulator films with a combination of LiF and AlO x capping layers. The AlO x /LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped (Bi,Sb)2Te3 films and effectively prevent them from degradation induced by ambient conditions. The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system. Project supported by the National Natural Science Foundation of China (Grant No. 11325421).

  10. Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

    NASA Astrophysics Data System (ADS)

    Ikegami, Keiichi

    2004-05-01

    Field-effect doping in a metal/insulator/semiconductor/metal four-layer model indicates that the well-known threshold behavior Q\\propto(VG-Vth), where Q is the induced charge and VG and Vth are the bias voltage and its threshold value, respectively, should be realized even when the thickness of the semiconductor layer (ds) is on the 10 nm scale. At the same time, however, this model suggests that the doping phenomenon deviates from this simple threshold behavior when the density of states is small and ds is on the 1 nm scale.

  11. Optical and electrical characterization of aluminium doped ZnO layers

    NASA Astrophysics Data System (ADS)

    Major, C.; Nemeth, A.; Radnoczi, G.; Czigany, Zs.; Fried, M.; Labadi, Z.; Barsony, I.

    2009-08-01

    Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.

  12. Structural transformation and photoluminescence behavior during calcination of the layered europium-doped yttrium hydroxide intercalate with organic-sensitizer

    SciTech Connect

    Sun, Yahong; Pan, Guohua; Gu, Qingyang; Li, Xinxin; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2013-11-15

    Graphical abstract: Calcination of organic sensitizer intercalated layered europium-doped yttrium hydroxide displayed tunable luminescent performance dependent on calcined temperatures. The 200 °C-calcined sample revealed an optimal fluorescence behavior with respect to TA-LYH:Eu composite and the as-transformed oxide. - Highlights: • We report the calcinations process of organic/LYH:Eu nanocomposite materials. • We study structural transformation and fluorescence behavior of the calcined samples. • Calcined samples displayed tunable luminescent performance dependent on temperatures. • The optimal fluorescence was found in 200 °C-calcined sample. • This material can provide valuable guide for developing tunable luminescent materials. - Abstract: We report, for the first time, structural transformation and photoluminescence behavior by calcination of layered europium-doped yttrium hydroxide (LYH:Eu) intercalate with organic sensitizer terephthalate (TA). The calcined samples displayed tunable luminescent performance dependent on calcined temperatures. Calcination under low temperatures (200 and 300 °C) retained layered structure, while high temperatures (>400 °C) yielded oxide phase. The optimal fluorescence occurred in 200 °C-calcination, possibly resulting from an optimal arrangement of TA. Above 200 °C, the luminescence intensity was first weakened and then enhanced, due to gradual departure of TA and following occurrence of oxide phase. The energy transfer presented an intrinsic transition from TA-to-Eu{sup 3+} in the organic intercalate to O{sup 2−}-to-Eu{sup 3+} charge transfer in as-transformed oxide. The predominant luminescence property of the hybrid material can provide valuable guide for developing tunable luminescent materials, especially flexible materials resulting from the containing organic component.

  13. Room temperature performance of 4 V aqueous hybrid supercapacitor using multi-layered lithium-doped carbon negative electrode

    NASA Astrophysics Data System (ADS)

    Makino, Sho; Yamamoto, Rie; Sugimoto, Shigeyuki; Sugimoto, Wataru

    2016-09-01

    Water-stable multi-layered lithium-doped carbon (LixC6) negative electrode using poly(ethylene oxide) (PEO)-lithium bis(trifluoromethansulfonyl)imide (LiTFSI) polymer electrolyte containing N-methyl-N-propylpiperidinium bis(trifluoromethansulfonyl)imide (PP13TFSI) ionic liquid was developed. Electrochemical properties at 60 °C of the aqueous hybrid supercapacitor using activated carbon positive electrode and a multi-layered LixC6 negative electrode (LixC6 | PEO-LiTFSI | LTAP) without PP13TFSI exhibited performance similar to that using Li anode (Li | PEO-LiTFSI | LTAP). A drastic decrease in ESR was achieved by the addition of PP13TFSI to PEO-LiTFSI, allowing room temperature operation. The ESR of the multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C was 801 Ω cm2, which is 1/6 the value of the multi-layered Li negative electrode with PEO-LiTFSI (5014 Ω cm2). Charge/discharge test of the aqueous hybrid supercapacitor using multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI at 25 °C afforded specific capacity of 20.6 mAh (g-activated carbon)-1 with a working voltage of 2.7-3.7 V, and good long-term capability up to 3000 cycles. Furthermore, an aqueous hybrid supercapacitor consisting of a high capacitance RuO2 nanosheet positive electrode and multi-layered LixC6 negative electrode with PEO-LiTFSI-PP13TFSI showed specific capacity of 196 mAh (g-RuO2)-1 and specific energy of 625 Wh (kg-RuO2)-1 in 2.0 M acetic acid-lithium acetate buffered solution at 25 °C.

  14. Molecular doping of regioregular poly(3-hexylthiophene) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane investigated by infrared spectroscopy and electrical measurements

    NASA Astrophysics Data System (ADS)

    Tadaki, Daisuke; Ma, Teng; Zhang, Jinyu; Iino, Shohei; Hirano-Iwata, Ayumi; Kimura, Yasuo; Niwano, Michio

    2015-09-01

    Molecular doping is a charge-transfer process intended to improve the performance of organic electronic devices such as organic transistors. We have investigated molecular doping of regioregular poly(3-hexylthiophene) (P3HT) layers by 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS) and conductivity measurements. IRAS data confirm that F4-TCNQ acts as an effective p-type dopant for P3HT; highly doped P3HT displayed an intense, broad absorption band due to polaron (“polaron band”) and a high carrier (hole) density which are indicative of the charge transfer between F4-TCNQ and P3HT. We demonstrate that the charge (hole) transferred from the dopant molecule is distributed along the P3HT polymer chain and spreads over at least 10 thiophene monomer units on the chain. From a comparison of the measured conductivity of F4-TCNQ-doped P3HT layers with the carrier density, we show that the carrier mobility is proportional to the concentration of carriers (holes), which suggests that F4-TCNQ doping induces the conformational change of P3HT polymer chains to enhance the mobility of holes in the films of the doped P3HTs.

  15. Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells.

    PubMed

    Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

    2012-01-01

    We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDOT:PSS. As the amount of pentacene in the PEDOT:PSS solution was increased, UV-visible transmittance also increased dramatically. By increasing the amount of pentacene in PEDOT:PSS films, dramatic decreases in both the work function and surface resistance were observed. However, the work function and surface resistance began to sharply increase above the doping amount of pentacene at 7.7 and 9.9 mg, respectively. As the annealing temperature was increased, the surface roughness of pentacene-doped PEDOT:PSS films also increased, leading to the formation of PEDOT:PSS aggregates. The films of pentacene-doped PEDOT:PSS were characterized by AFM, SEM, UV-visible transmittance, surface analyzer, surface resistance, and photovoltaic response analysis. PMID:22221320

  16. New Insight into an Under-doped Regime of High Tc Superconductivity - NMR Studies of Multi-layered Cuprates

    NASA Astrophysics Data System (ADS)

    Kitaoka, Yoshio

    2007-03-01

    High-temperature superconductivity (HTSC) has not been fully understood yet despite 20 year's intensive research. In particular, a possible interplay between antiferromagnetism (AFM) and HTSC remains as a most interesting problem. It is believed that they all fit into a universal phase diagram which suggests a competition between AFM and HTSC. Recently, however, through the systematic Cu-NMR studies on the Hg-, Tl- and Cu-based five-layered HTSC, we propose a novel phase diagram [1-3], which differs from the generic phase diagram of the HTSC reported so far, for instance, such as LSCO. The multi-layered HTSC compounds include two types of CuO2 planes, an outer CuO2 plane (OP) in a pyramidal coordination and an inner CuO2 plane (IP) in a square one with no apical oxygen. Remarkable feature of the multi-layered HTSC is the presence of ideally flat CuO2 planes that are homogeneously doped, which is ensured by the narrowest NMR spectral width among the various HTSC compounds with very high quality to date. It should be noted that the nearly non-doped AFM in the IP and the IP* takes place, whereas inhomogeneous magnetic phases such as spin-glass phase or stripe phase are not observed at both the IP's and the OP's. Instead, the existence of the doped AFM metallic (AFMM) phase at the IP and the IP* is remarkable at the boundary between AFM insulating (AFMI) phase and SC. This differs from the case of LSCO where the disorder-driven magnetic phases exist between the AFMI phase in Nh< 0.02 and the SC phase in Nh> 0.05. In an underlying phase diagram, the AFMM is extended to a higher hole density due to the flatness of CuO2 plane with no apical oxygen and the homogeneous distribution of carrier density. By contrast, the prototype phase diagrams reported thus far are under the inevitable disorder effect associated with the chemical substitution introduced into the CuO2 out-of-planes as corroborated by the observation of a disorder-driven transition from AFMM phase to AFMI

  17. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    NASA Astrophysics Data System (ADS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  18. Direct Synthesis of Few-Layer F-Doped Graphene Foam and Its Lithium/Potassium Storage Properties.

    PubMed

    Ju, Zhicheng; Zhang, Shuai; Xing, Zheng; Zhuang, Quanchao; Qiang, Yinghuai; Qian, Yitai

    2016-08-17

    Heteroatom-doped graphene is considered a potential electrode materials for lithium-ion batteries (LIBs). However, potassium-ion batteries (PIBs) systems are possible alternatives due to the comparatively higher abundance. Here, a practical solid-state method is described for the preparation of few-layer F-doped graphene foam (FFGF) with thickness of about 4 nm and high surface area (874 m(2)g(-1)). As anode material for LIBs, FFGF exhibits 800 mAh·g(-1) after 50 cycles at a current density of 100 mA·g(-1) and 555 mAh·g(-1) after 100 cycles at 200 mA·g(-1) as well as remarkable rate capability. FFGF also shows 165.9 mAh·g(-1) at 500 mA·g(-1) for 200 cycles for PIBs. Research suggests that the multiple synergistic effects of the F-modification, high surface area, and mesoporous membrane structures endow the ions and electrons throughout the electrode matrix with fast transportation as well as offering sufficient active sites for lithium and potassium storage, resulting in excellent electrochemical performance. Furthermore, the insights obtained will be of benefit to the design of reasonable electrode materials for alkali metal ion batteries. PMID:27467782

  19. Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

    NASA Astrophysics Data System (ADS)

    Kellogg, Isaiah D.; Koylu, Umit O.; Dogan, Fatih

    Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration.

  20. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    PubMed

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation. PMID:22966566

  1. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  2. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    PubMed Central

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid bin; Jang, Jin

    2016-01-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL. PMID:27277388

  3. Photovoltaic response in pristine WSe{sub 2} layers modulated by metal-induced surface-charge-transfer doping

    SciTech Connect

    Wi, Sungjin; Chen, Mikai; Li, Da; Nam, Hongsuk; Meyhofer, Edgar; Liang, Xiaogan

    2015-08-10

    We obtained photovoltaic response in pristine multilayer WSe{sub 2} by sandwiching WSe{sub 2} between top and bottom metals. In this structure, the work-function difference between the top metal and WSe{sub 2} plays a critical role in generating built-in potentials and photovoltaic responses. Our devices with Zn as top metal exhibit photo-conversion efficiencies up to 6.7% under 532 nm illumination and external quantum efficiencies in the range of 40%–83% for visible light. This work provides a method for generating photovoltaic responses in layered semiconductors without detrimental doping or exquisite heterostructures, and also advances the physics for modulating the band structures of such emerging semiconductors.

  4. Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer

    NASA Astrophysics Data System (ADS)

    Sekiguchi, Hiroto; Takagi, Yasufumi; Otani, Tatsuki; Matsumura, Ryota; Okada, Hiroshi; Wakahara, Akihiro

    2013-08-01

    Mg codoping into Eu-doped GaN (GaN:Eu) changed the dominant optical site and increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of PL integrated intensity at 25 K to that at 300 K, PL efficiency of the GaN:Eu,Mg layer was evaluated to be as high as 77%. On the basis of this experiment, GaN:Eu-based LEDs grown by NH3 MBE were fabricated. Clear rectification characteristics with a turn-on voltage of 3.2 V were observed and a pure red emission was observed by the naked eye at RT. For the electroluminescence (EL) spectra, two predominant peaks of higher-efficiency optical sites A and C were selectively enhanced and the EL intensity was improved. This result suggests that GaN:Eu was very effective for realizing red-light-emitting devices using the nitride semiconductor.

  5. Stable and null current hysteresis perovskite solar cells based nitrogen doped graphene oxide nanoribbons hole transport layer

    NASA Astrophysics Data System (ADS)

    Kim, Jeongmo; Mat Teridi, Mohd Asri; Mohd Yusoff, Abd. Rashid Bin; Jang, Jin

    2016-06-01

    Perovskite solar cells are becoming one of the leading technologies to reduce our dependency on traditional power sources. However, the frequently used component poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) has several shortcomings, such as an easily corroded indium-tin-oxide (ITO) interface at elevated temperatures and induced electrical inhomogeneity. Herein, we propose solution-processed nitrogen-doped graphene oxide nanoribbons (NGONRs) as a hole transport layer (HTL) in perovskite solar cells, replacing the conducting polymer PEDOT:PSS. The conversion efficiency of NGONR-based perovskite solar cells has outperformed a control device constructed using PEDOT:PSS. Moreover, our proposed NGONR-based devices also demonstrate a negligible current hysteresis along with improved stability. This work provides an effective route for substituting PEDOT:PSS as the effective HTL.

  6. Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

    NASA Astrophysics Data System (ADS)

    Prahoveanu, Codrin; Laversenne, Laetitia; de Vaulx, Cédric; Bès, Alexandre; Azzouz, Kamel; Lacoste, Ana

    2016-08-01

    The performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter.

  7. Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping

    NASA Astrophysics Data System (ADS)

    Tsai, Ping-Chieh; Su, Yan-Kuin; Chen, Wen-Ray; Huang, Chun-Yuan

    2010-04-01

    The effects of a strain relief layer (SRL) employed in the InGaN/GaN light-emitting diodes (LEDs) was demonstrated. The wavelength shift was reduced to as small as 2.5 nm by inserting a SRL between n-GaN and InGaN/GaN multiple quantum wells (MQWs). For the improvement of optical properties, a proper Si-doped layer was simultaneously added in the last several barriers of In0.08Ga0.92N/GaN SRL. It can be found that the output power was increased more than 25% as the Si doping level was increased up to 5 times in the last three barriers of SRL at an injection current of 20 mA. Furthermore, the forward voltages at 20 mA were almost the same for all LEDs with different doping levels and positions.

  8. Doped TiO2 anodic layers of enhanced antibacterial properties.

    PubMed

    Arenas, María A; Pérez-Jorge, Concepción; Conde, Ana; Matykina, Endzhe; Hernández-López, Juan M; Pérez-Tanoira, Ramón; de Damborenea, Juan J; Gómez-Barrena, Enrique; Esteba, Jaime

    2013-05-01

    Ti-6Al-4V joint replacement implants foster uncemented fixation in orthopaedic surgery. However, bacterial colonization competes with host cells and ultimately may produce implant-related difficult-to-treat infections, justifying the efforts to obtain infection-resistant materials. In a previous work, the authors demonstrated the antibacterial properties of anodic fluoride-TiO2 nanostructured layers on Ti-6Al-4V alloy. In this work, the anodizing bath has been modified in order to grow fluoride-TiO2 barrier layers (FBL). A bacterial adherence protocol, run with reference and six different clinical strains of Staphylococcus aureus and Staphylococcus epidermidis, showed a statistically significant decrease in the percentage of covered surface (p<0.0001, Kruskal-Wallis test) for FBL specimens when compared with non fluoride-containing specimens, i.e. chemically polished Ti-6Al-4V and F-free TiO2 barrier layers. The results obtained on the F-barrier layers allowed discrimination between the effects of the presence of fluoride in the layer and the layer nanostructure on bacterial adhesion. PMID:23357736

  9. Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375

    SciTech Connect

    Repins, I.

    2012-01-01

    This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gain for industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.

  10. Final Closeout report for grant FG36-08GO18018, titled: Functional Multi-Layer Solution Processable Polymer Solar Cells

    SciTech Connect

    Adam J. Moule

    2012-05-01

    heterojunction layer is based upon the idea of balancing good and bad properties within a single film. This proposal addresses the idea that the use of multiple layers that have differing electrical and optical functions could lead to greater efficiency because fewer materials compromises must be made. This idea is not new, multiple functional layer have been successfully used in cross-linked OLED's and organic small molecule evaporated PV devices. The main reason that multiple layers of polymers are not commonly deposited is that most conjugated polymers are mutually soluble in the same solvents. The work outlined in the proposal was intended to develop a new deposition strategy that would allow multiple organic layers to be deposited from solution using spin coating. The deposition method that we proposed was successful, sometimes, but ultimately not reliable. Instead we focused on more reliable methods to implement doping along the interface between layers. This work has been very successful. We found that using PEDOT:PSS, the PSS would form a surface layer of {approx}2-3 nm thickness that would mix with and electrochemically react with P3HT upon heating. This mechanism is also a crosslinking reaction in that H{sub 2} is released and permanent new bonds are formed. Using the Plextronics Inc. replacement to PEDOT:PSS, for which there are no mobile dopants, we were able to show that a second and different mechanism can be used to p-type dope organic materials. We are currently working with Plextronics to develop a new product. Finally we produced n-type doping of a thin fullerene layer near the cathode also using a self-assembly method. Low work function metals will diffuse into the BHJ layer and dope the fullerene upon heating. This doping also affects the vertical segregation of BHJ materials in a predictable way. We accomplished all of the scientific goals that we set out in the proposal written in May 2007. Some of the methods we proposed were not fully successful, but we

  11. Zirconium doped TiO2 thin films: A promising dielectric layer

    NASA Astrophysics Data System (ADS)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2016-05-01

    In the present work, we have fabricated the zirconium doped TiO2 thin (ZTO) films from a facile spin - coating method. The addition of Zirconium in TiO2 offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO2 thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ˜10-8 A/cm2. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

  12. Erbium doping into silicate glasses to form luminescent optical layers for photonics applications

    NASA Astrophysics Data System (ADS)

    Salavcova, Linda; Mackova, Anna; Oswald, Jiri; Svecova, Blanka; Janakova, Stanislava; Spirkova, Jarmila; Mika, Martin

    2007-05-01

    Here we summarise results of our research on the Er-containing thin surface layers in the silicate glasses and on the effect of the layers’ composition on their luminescence properties (emission at 1535 nm) in the wavelength region widely used in photonics. The optical layers were fabricated by Er3+ (melt)⇔Li+/Na+ (glass substrate) ion exchange in the specially designed Li2O containing silicate glasses using various conditions (including annealing of the samples) to obtain a set of layers with diverse distribution of the Er3+ ions. Changes in the chemical composition of the prepared layers were suggested to avoid the concentration quenching effect and to improve their luminescence properties; special attention was paid to presence of hydrogen in the layers that may decrease the emission intensity. Rutherford Backscattering Spectroscopy and Elastic Recoil Detection were used to obtain detailed information on migration of erbium and hydrogen through the glass matrix, respectively. Photoluminescence spectra of the fabricated samples were measured (excitation at 980 nm) to examine the desired emission around 1535 nm.

  13. Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

    NASA Astrophysics Data System (ADS)

    Yamaguchi, Harunaka; Nagira, Takashi; Kawazu, Zempei; Sakaino, Go; Nishida, Takehiro; Takemi, Masayoshi

    2015-03-01

    We report on the stable growth of ruthenium doped InP (Ru-InP) and its application in optical communication devices, grown by metal-organic vapor phase epitaxy. Ru-InP has semi-insulating characteristics for both n- and p-InP. The resistivity of the p/Ru/p-InP structure was 2×107 Ω cm for a Ru concentration of 5×1017 cm-3 in Ru-InP with a Ru-InP thickness greater than 1.0 μm. However, the resistivity was very low when the Ru-InP thickness was less than 1.0 μm. We investigated the Zn diffusion from p-InP to Ru-InP and found two Zn diffusion fronts in Ru-InP. Each diffusion front had a correlation with the Ru and Zn concentrations. By optimizing the current blocking layers in the Ru-InP and Zn-InP layers in buried-heterostructure lasers (BH-lasers), an output power over 10 mW was realized for laser diodes, even when they were operated at 95 °C.

  14. A novel way to enhance hydrogenation resistance of nano-layered titanium silicon carbide by the doping of aluminium

    NASA Astrophysics Data System (ADS)

    Chen, Chen; Xu, Canhui; Li, Fangzhi; Tan, Yongqiang; Zhang, Haibin; Peng, Shuming

    2016-08-01

    The outstanding irradiation and corrosion resistance of nano-layered Ti3SiC2 make it suitable for cladding materials in advanced nuclear systems. However, Ti3SiC2 shows the relatively poor thermal stability in hydrogen circumstance at high temperature, which is a big obstacle for its nuclear related applications. In this paper, we proposed an effective approach to improve the hydrogenation resistance of Ti3SiC2 by the doping of Al. The experimental results demonstrated that compared to pure Ti3SiC2, Ti3Si0.9Al0.1C2 (TSAC) displayed much better hydrogenation resistance. Through first-principles calculation, it was concluded that the introduction of H interstitial atom made the formation energy of Al vacancy much lower, so Al atoms became much easier to remove from TSAC than Si atoms and Ti atoms. The preferable loss of aluminium from TSAC substrate gave rise to the formation of Al2O3 layer, which improved the hydrogenation resistance of TSAC by inhibiting further reaction between TSAC and hydrogen.

  15. Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer

    NASA Astrophysics Data System (ADS)

    Qiao, Ming; Li, Chengzhou; Liu, Yihe; Wang, Yuru; Li, Zhaoji; Zhang, Bo

    2016-05-01

    A novel triple reduced surface field (RESURF) lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS) with partial linear variable doping (LVD) N-type top (N-top) layer is proposed in this paper. Compared with the conventional triple RESURF LDMOS, a partial LVD N-top layer is introduced in the surface of N-well, providing a low on-resistance conduction path and leading to an optimized surface electric field, which alleviates the inherent tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). With the n-drift region length of 70 μm, the novel triple RESURF LDMOS obtains a high BV of 847 V and a low Ron,sp of 79 mΩ cm2 which are 76 V higher and 46 mΩ cm2 lower than those of the conventional triple RESURF LDMOS. Therefore, the novel triple RESURF LDMOS can greatly improve the tradeoff between BV and Ron,sp. Furthermore, compared with the other existing technologies in the high BV level, the novel triple RESURF LDMOS can achieve a highest figure of merit (FOM, defined as BV2/Ron,sp) of 9.08 MW/cm2 and the conventional RESURF silicon limits are broken.

  16. Influence of n-doped μc-Si:H back surface field layer with micro growth in crystalline-amorphous silicon heterojunction solar cells.

    PubMed

    Kim, Sangho; Dao, Vinh Ai; Shin, Chonghoon; Balaji, Nagarajan; Yi, Junsin

    2014-12-01

    The back surface field (BSF) plays an important role for the efficiency of the heterojunction intrinsic thin-film (HIT) solar cell. In this paper, the effect of thickness variation in n-type micro crystalline BSF layer was investigated by Raman and spectroscopy ellipsometry. As we increase the crystalline volume fraction (X(c)) from 6% to 59%, the open circuit voltage (V(oc)) increases from 573 to 696 mV with increase in fill factor from 59% to 71%. However, we observed that V(oc) and FF are decreased over 59% X(c) of n-type μc-Si:H BSF layer. It seems that higher X(c) micro layer include lots of defects. The quantum efficiency (QE) measurements were demonstrated on optimized thickness of n-doped micro BSF layer. In the long wavelengths region, the QE slightly increases with increasing the n-type μc-Si:H BSF layer thickness from 10 to 40 nm because of BSF effect, whereas the QE decreases when n-type μc-Si:H BSF layer thickness increases from 40 to 120 nm due to defects in the layer. The performance of heterojunction solar cell device was improved with the optimized thickness on n-doped micro BSF layer the best photo voltage parameters of the device were found to be V(oc) of 696 mV, short-circuit current density of 36.09 mA/cm2 and efficiency of 18.06% at n-doped micro BSF layer thickness of 40 nm. PMID:25971047

  17. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    NASA Astrophysics Data System (ADS)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  18. Features of the charge-transport mechanism in layered Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium

    SciTech Connect

    Abdullaev, N. A. Abdullaev, N. M.; Aliguliyeva, H. V.; Kerimova, T. G.; Mehdiyev, G. S.; Nemov, S. A.

    2011-01-15

    The temperature dependences (T = 5-300 K) of the resistivity in the plane of layers and in the direction perpendicular to the layers, as well as the Hall effect and the magnetoresistance (H < 80 kOe, T = 0.5-4.2 K) in Bi{sub 2}Te{sub 3} single crystals doped with chlorine and terbium, are investigated. It is shown that the doping of Bi{sub 2}Te{sub 3} with terbium atoms results in p-type conductivity and in increasing hole concentration. The doping of Bi{sub 2}Te{sub 3} with chlorine atoms modifies also the character of its conductivity instead of changing only the type from p to n. In the temperature dependence of the resistivity in the direction perpendicular to layers, a portion arises with the activation conductivity caused by the hopping between localized states. The charge-transport mechanism in Bi{sub 2}Te{sub 3} single crystals doped with chlorine is proposed.

  19. Doping evolution of the electronic structure in the single-layer cuprates Bi2Sr2−xLaxCuO6 delta: Comparison with other single-layer cuprates

    SciTech Connect

    Hashimoto, M.

    2010-04-30

    We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi{sub 2}Sr{sub 2-x}La{sub x}CuO{sub 6+{delta}} (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi 'arc' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2} (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La{sub 2-x}Sr{sub x}CuO{sub 4} (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tightbinding fit, and the deduced next-nearest-neighbor hopping integral t also confirm the similarity to Na-CCOC and the difference from LSCO.

  20. High-performance and environmentally stable planar heterojunction perovskite solar cells based on a solution-processed copper-doped nickel oxide hole-transporting layer.

    PubMed

    Kim, Jong H; Liang, Po-Wei; Williams, Spencer T; Cho, Namchul; Chueh, Chu-Chen; Glaz, Micah S; Ginger, David S; Jen, Alex K-Y

    2015-01-27

    An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study. PMID:25449020

  1. Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures

    SciTech Connect

    Dorozhkin, S. I. Sychev, D. V.; Kapustin, A. A.

    2014-11-28

    We have implemented a new bolometric method to detect resonances in magneto-absorption of microwave radiation by two-dimensional electron systems (2DES) in selectively doped GaAs/AlGaAs heterostructures. Radiation is absorbed by the 2DES and the thermally activated conductivity of the doping layer supplying electrons to the 2DES serves as a thermometer. The resonant absorption brought about by excitation of the confined magnetoplasma modes appears as peaks in the magnetic field dependence of the low-frequency impedance measured between the Schottky gate and 2DES.

  2. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    PubMed Central

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials. PMID:26753877

  3. Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

    NASA Astrophysics Data System (ADS)

    Li, Yang; Wang, Jingfeng; Kong, Yi; Zhou, Jia; Wu, Jinzhu; Wang, Gang; Bi, Hai; Wu, Xiaohong; Qin, Wei; Li, Qingkun

    2016-01-01

    In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

  4. Molecular Design of Doped Polymers for Thermoelectric Systems-Final Technical Report

    SciTech Connect

    Chabinyc, Michael L.; Hawker, Craig J.

    2013-10-09

    The self-assembly of organic semiconducting molecules and polymers is critical for their electrical properties. This project addressed the design of organic semiconductors with novel synthetic building blocks for proton-dopable conducting materials and the molecular order and microstructure of high performance semiconducting polymers blended with charge transfer dopants. Novel azulene donor-acceptor materials were designed and synthesized with unique electronic effects upon protonation to generate charged species in solution. The microstructure and optical properties of these derivatives were examined to develop structure-property relationships. Studies of the microstructure of blends of charge transfer doped semiconducting polymers revealed highly ordered conductive phases in blends. The molecular packing of one blend was studied in detail using a combination of solid-state NMR and x-ray scattering revealing that dopant incorporation is unlikely to be random as assumed in transport models. Studies of the electrical properties of these highly ordered blends revealed a universal trend between the thermopower and electrical conductivity of semiconducting polymers that is independent of the doping mechanism.

  5. Photophysical processes of triplet states and radical ions in pure and molecularly doped polymers. Final report

    SciTech Connect

    Burkhart, R.D.

    1998-01-01

    Both the past and current objectives are to learn how to control the rate and direction of triplet exciton migration in both pure and molecularly doped polymer systems. Since triplet excimers are efficient traps for migrating excitons, a secondary objective has been to characterize these excimers with a view toward their use as rate modifiers or excited state quenchers. Further objectives included those stated above as past and current objectives but with an additional goal. The authors learned that fluid solutions of many of the nitrogen containing chromophores with which they work produce both radical cations and anions upon excimer laser excitation. They also learned that a phosphorus analogue behaves similarly. At this time the mechanism of charge generation in these systems is not well established but they do know that the electronically excited states and radical ions can potentially interconvert. They wanted to find out whether or not the pure or molecularly doped polymer systems could be used in a step-wise sequence involving light absorption followed by charge generation. All of their activities are oriented toward the potential end use of polymeric systems in the conversion of light energy to perform various types of useful work.

  6. Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.

    PubMed

    Macco, Bart; Knoops, Harm C M; Kessels, Wilhelmus M M

    2015-08-01

    Hydrogen-doped indium oxide (In2O3:H) has recently emerged as an enabling transparent conductive oxide for solar cells, in particular for silicon heterojunction solar cells because its high electron mobility (>100 cm(2)/(V s)) allows for a simultaneously high electrical conductivity and optical transparency. Here, we report on high-quality In2O3:H prepared by a low-temperature atomic layer deposition (ALD) process and present insights into the doping mechanism and the electron scattering processes that limit the carrier mobility in such films. The process consists of ALD of amorphous In2O3:H at 100 °C and subsequent solid-phase crystallization at 150-200 °C to obtain large-grained polycrystalline In2O3:H films. The changes in optoelectronic properties upon crystallization have been monitored both electrically by Hall measurements and optically by analysis of the Drude response. After crystallization, an excellent carrier mobility of 128 ± 4 cm(2)/(V s) can be obtained at a carrier density of 1.8 × 10(20) cm(-3), irrespective of the annealing temperature. Temperature-dependent Hall measurements have revealed that electron scattering is dominated by unavoidable phonon and ionized impurity scattering from singly charged H-donors. Extrinsic defect scattering related to material quality such as grain boundary and neutral impurity scattering was found to be negligible in crystallized films indicating that the carrier mobility is maximized. Furthermore, by comparison of the absolute H-concentration and the carrier density in crystallized films, it is deduced that <4% of the incorporated H is an active dopant in crystallized films. Therefore, it can be concluded that inactive H atoms do not (significantly) contribute to defect scattering, which potentially explains why In2O3:H films are capable of achieving a much higher carrier mobility than conventional In2O3:Sn (ITO). PMID:26168056

  7. Highly phosphorus-doped crystalline Si layers grown by pulse-magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Fenske, Frank; Gorka, Benjamin

    2009-04-01

    The electrical properties of highly phosphorus-doped crystalline silicon films deposited by pulse-magnetron sputtering were studied. The films were grown, 450 nm thick, on Si(100) and Si(111) wafers at low substrate temperatures Ts of 450-550 °C and post-treated by rapid thermal annealing (RTA) and plasma hydrogenation (PH). In the case of films grown on Si(100), at all values of Ts postgrowth treatment by RTA resulted in an increase in the dopant activation up to 100% and of the Hall mobility to about bulklike values of 50 cm2 V-1 s-1. This result suggests high structural quality of the films on Si(100). The Si(111) films, which are typically more defective, exhibit a completely different behavior with a strong dependence of the electrical dopant activation and the Hall mobility on Ts. By post-treatment a maximum P donor activation level of 22% could be obtained. The variation in the post-treatment procedure (RTA+PH and PH+RTA) for the films deposited at high Ts showed that PH results only in minor changes in the film properties. The different influence of RTA and PH is discussed in terms of the different defect structure of the films. These investigations reveal that high Ts and after-treatment by RTA are the main preconditions for optimal electrical film properties.

  8. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    PubMed

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. PMID:27311112

  9. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass

    PubMed Central

    Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; O’Hayre, Ryan P.; Ginley, David S.; Berry, Joseph J.

    2016-01-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity. PMID:27610922

  10. The Role of Nanoscale Seed Layers on the Enhanced Performance of Niobium doped TiO2 Thin Films on Glass.

    PubMed

    Nikodemski, Stefan; Dameron, Arrelaine A; Perkins, John D; O'Hayre, Ryan P; Ginley, David S; Berry, Joseph J

    2016-01-01

    Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seed layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Furthermore, our results indicate that the generation of excellent Nb:TiO2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity. PMID:27610922

  11. Highly conducting and wide band gap phosphorous doped nc-Si-QD/a-SiC films as n-type window layers for solar cells

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-05-01

    Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH4 + CH4)-plasma with PH3 as the doping gas. The effect of PH3 flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si-QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (~10-2 S cm-1) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.

  12. Origin of Enhanced Hole Injection in Organic Light-Emitting Diodes with an Electron-Acceptor Doping Layer: p-Type Doping or Interfacial Diffusion?

    PubMed

    Zhang, Lei; Zu, Feng-Shuo; Deng, Ya-Li; Igbari, Femi; Wang, Zhao-Kui; Liao, Liang-Sheng

    2015-06-10

    The electrical doping nature of a strong electron acceptor, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN), is investigated by doping it in a typical hole-transport material, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine (NPB). A better device performance of organic light-emitting diodes (OLEDs) was achieved by doping NPB with HATCN. The improved performance could, in principle, arise from a p-type doping effect in the codeposited thin films. However, physical characteristics evaluations including UV-vis absorption, Fourier transform infrared absorption, and X-ray photoelectron spectroscopy demonstrated that there was no obvious evidence of charge transfer in the NPB:HATCN composite. The performance improvement in NPB:HATCN-based OLEDs is mainly attributed to an interfacial modification effect owing to the diffusion of HATCN small molecules. The interfacial diffusion effect of the HATCN molecules was verified by the in situ ultraviolet photoelectron spectroscopy evaluations. PMID:25970499

  13. Layered structure of anodic SiO{sub 2} films doped with phosphorus or boron

    SciTech Connect

    Mileshko, L. P.

    2009-12-15

    It is shown that anodic silicon oxide films deposited by reanodization (repeated anodic oxidation) of p- and n-type silicon in phosphate (1.5 M H{sub 3}PO{sub 4}), borate (1.5 M H{sub 3}BO{sub 3}), and nitrate (0.04 M NH{sub 4}NO{sub 3}) electrolytes based on tetrahydrofurfuryl alcohol have a three- or four-layer structure both before and after high-temperature annealing. It is assumed that this circumstance accounts for the nonuniform distribution of phosphorus and boron across the thickness of anodic SiO{sub 2}.

  14. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    NASA Astrophysics Data System (ADS)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  15. Estimation on the self recovery behavior of low-conductivity layer in landfill final cover by laboratory conductivity tests.

    PubMed

    Kwon, O; Park, J

    2006-11-01

    This study examined the application of a Self Recovering Sustainable Layer (SRSL) as a landfill final cover. Low-conductivity layers in landfill covers are known to have problems associated with cracking as a result of the differential settlement or climatic changes. A SRSL is defined as a layer with chemical properties that reduces the increased hydraulic conductivity resulting from cracking by forming low-conductivity precipitates of chemicals contained in the layer. In this study, the formation of precipitates was confirmed using a batch test, spectroscopic analysis and mineralogical speciation tests. The possibility of secondary contamination due to the chemicals used for recovery was evaluated using a leaching test. A laboratory conductivity test was performed on a single layer composed of each chemical as well as on a 2-layer system. The recovery performance of the SRSL was estimated by developing artificial cracks in the specimens and observing the change in hydraulic conductivity as a function of time. In the laboratory conductivity test, the hydraulic conductivity of a 2-layer system as well as those of the individual layers that comprise the 2-layer system was estimated. In addition sodium ash was found to enhance the reduction in conductivity. A significant increase in conductivity was observed after the cracks developed but this was reduced with time, which indicated that the SRSL has a proper recovering performance. In conclusion, a SRSL can be used as a landfill final cover that could maintain low-conductivity even after the serious damages due to settlement. PMID:17203605

  16. Numerical Analysis of In2S3 Layer Thickness, Band Gap and Doping Density for Effective Performance of a CIGS Solar Cell Using SCAPS

    NASA Astrophysics Data System (ADS)

    Khoshsirat, Nima; Md Yunus, Nurul Amziah

    2016-07-01

    The effect of indium sulfide buffer layer's geometrical and electro-optical properties on the Copper-Indium-Gallium-diSelenide solar cell performance using numerical simulation is investigated. The numerical simulation software used is a solar cell capacitance simulator in (SCAPS). The innermost impacts of buffer layer thickness, band gap, and doping density on the cells output parameters such as open circuit voltage, short circuit current density, fill factor, and the efficiency were extensively simulated. The results show that the cell efficiency, which was innovatively illustrated as a two-dimensional contour plot function, depends on the buffer layer electron affinity and doping density by keeping all the other parameters at a steady state. The analysis, which was made from this numerical simulation, has revealed that the optimum electron affinity is to be 4.25 ± 0.2 eV and donor density of the buffer layer is over 1× 10 ^{17} cm^{-3} . It is also shown that the cell with an optimum thin buffer layer has higher performance and efficiency due to the lower optical absorption of the buffer layer.

  17. Perovskite-organic hybrid tandem solar cells using a nanostructured perovskite layer as the light window and a PFN/doped-MoO3/MoO3 multilayer as the interconnecting layer

    NASA Astrophysics Data System (ADS)

    Liu, Jian; Lu, Shunmian; Zhu, Lu; Li, Xinchen; Choy, Wallace C. H.

    2016-02-01

    In this study, we present a two-terminal perovskite (PVSK)-organic hybrid tandem solar cell with a nanostructured PVSK as the light window and a PFN/doped MoO3/MoO3 structure as the interconnecting layer (ICL). In this tandem structure, the PVSK layer is specially designed with a nanostructured surface morphology; thus the PCBM could be filled-up for forming intimately contacted interface with PVSK layers. This design could not only efficiently increase the device performance, it could also greatly remove the hysteresis of PVSK solar cells. The study indicates that doped MoO3 as the step layer plays a key role in protecting the underlying layer against multi-solution processes and aids in the efficient recombination of electrons and holes generated from the sub-cells. The hybrid tandem solar cell could achieve a high VOC of 1.58 V, which is the sum of those in the two sub-cells, and a high FF of 0.68, indicating the effectiveness of the multilayer ICL.In this study, we present a two-terminal perovskite (PVSK)-organic hybrid tandem solar cell with a nanostructured PVSK as the light window and a PFN/doped MoO3/MoO3 structure as the interconnecting layer (ICL). In this tandem structure, the PVSK layer is specially designed with a nanostructured surface morphology; thus the PCBM could be filled-up for forming intimately contacted interface with PVSK layers. This design could not only efficiently increase the device performance, it could also greatly remove the hysteresis of PVSK solar cells. The study indicates that doped MoO3 as the step layer plays a key role in protecting the underlying layer against multi-solution processes and aids in the efficient recombination of electrons and holes generated from the sub-cells. The hybrid tandem solar cell could achieve a high VOC of 1.58 V, which is the sum of those in the two sub-cells, and a high FF of 0.68, indicating the effectiveness of the multilayer ICL. Electronic supplementary information (ESI) available. See DOI: 10

  18. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    NASA Astrophysics Data System (ADS)

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-03-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics.

  19. Electro-optical characteristics of ZrO2 nanoparticle doped liquid crystal on ion-beam irradiated polyimide layer.

    PubMed

    Park, Hong-Gyu; Kim, Hyung-Jun; Kim, Myoung-Seong; Lee, Il-Hwan; Seo, Dae-Shik

    2012-07-01

    It is well known that doping liquid crystals (LCs) with nanoparticles can readily change the physical and electro-optical properties of LC mixture. In this paper, we report on how the electro-optical properties and thermal stability of an LC system were enhanced by dispersing zirconia (ZrO2) nanoparticles in nematic LCs on ion-beam irradiated polyimide layers. Homogeneous LC alignment was achieved and ZrO2/LC mixture was applied in twisted-nematic (TN) mode. The addition of ZrO2 nanoparticles contributed to improvement of electro-optical properties in the TN LC cell by lowering voltage operation and decreasing response time. The TN LC cells with a ZrO2 nanoparticle concentration of 2.0 wt% showed the lowest threshold voltage of 2.0 V and the fastest response time of 15.3 ms. This enhanced electro-optical performance was likely due to van-der waals interactions and the screening effect of the ZrO2 nanoparticles in the LC medium. The thermal stability of the ZrO2/LC mixture was also improved compared to a pristine LC system. PMID:22966615

  20. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets

    PubMed Central

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-01-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics. PMID:27010509

  1. Energy level alignment of electrically doped hole transport layers with transparent and conductive indium tin oxide and polymer anodes

    NASA Astrophysics Data System (ADS)

    Fehse, Karsten; Olthof, Selina; Walzer, Karsten; Leo, Karl; Johnson, Robert L.; Glowatzki, Hendrik; Bröker, Benjamin; Koch, Norbert

    2007-10-01

    Using ultraviolet photoemission spectroscopy, we investigated the energy level alignment at the interfaces of typical anodes used in organic electronics, indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), with the oligomeric hole transport material N ,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), and studied the influence of electrical interface doping by the strong electron acceptor tetrafluoro tetracyanoquinodimethane (F4-TCNQ). The fundamentally different anode materials with work functions of 4.40eV (ITO) and 4.85eV (PEDOT:PSS) show different hole injection barriers, which also depend on the thickness of the F4-TCNQ interface dopant layer. PEDOT:PSS anodes exhibit a consistently lower hole injection barrier to MeO-TPD compared to ITO by 0.1eV. We attribute this low hole injection barrier to additional charge transfer reactions at the PEDOT:PSS/MeO-TPD interface. In contrast, the deposition of the electron acceptor at the interface helps significantly to lower the hole injection barrier for ITO anodes.

  2. Erbium-doped fiber laser passively mode locked with few-layer WSe2/MoSe2 nanosheets.

    PubMed

    Mao, Dong; She, Xiaoyang; Du, Bobo; Yang, Dexing; Zhang, Wending; Song, Kun; Cui, Xiaoqi; Jiang, Biqiang; Peng, Tao; Zhao, Jianlin

    2016-01-01

    Few-layer transition-metal dichalcogenide WSe2/MoSe2 nanosheets are fabricated by a liquid exfoliation technique using sodium deoxycholate bile salt as surfactant, and their nonlinear optical properties are investigated based on a balanced twin-detector measurement scheme. It is demonstrated that both types of nanosheets exhibit nonlinear saturable absorption properties at the wavelength of 1.55 μm. By depositing the nanosheets on side polished fiber (SPF) or mixing the nanosheets with polyvinyl alcohol (PVA) solution, SPF-WSe2 saturable absorber (SA), SPF-MoSe2 SA, PVA-WSe2 SA, and PVA-MoSe2 SA are successfully fabricated and further tested in erbium-doped fiber lasers. The SPF-based SA is capable of operating at the high pump regime without damage, and a train of 3252.65 MHz harmonically mode-locked pulses are obtained based on the SPF-WSe2 SA. Soliton mode locking operations are also achieved in the fiber laser separately with other three types of SAs, confirming that the WSe2 and MoSe2 nanosheets could act as cost-effective high-power SAs for ultrafast optics. PMID:27010509

  3. Phosphorus-Doped Carbon Nitride Tubes with a Layered Micro-nanostructure for Enhanced Visible-Light Photocatalytic Hydrogen Evolution.

    PubMed

    Guo, Shien; Deng, Zhaopeng; Li, Mingxia; Jiang, Baojiang; Tian, Chungui; Pan, Qingjiang; Fu, Honggang

    2016-01-26

    Phosphorus-doped hexagonal tubular carbon nitride (P-TCN) with the layered stacking structure was obtained from a hexagonal rod-like single crystal supramolecular precursor (monoclinic, C2/m). The production process of P-TCN involves two steps: 1) the precursor was prepared by self-assembly of melamine with cyanuric acid from in situ hydrolysis of melamine under phosphorous acid-assisted hydrothermal conditions; 2) the pyrolysis was initiated at the center of precursor under heating, thus giving the hexagonal P-TCN. The tubular structure favors the enhancement of light scattering and active sites. Meanwhile, the introduction of phosphorus leads to a narrow band gap and increased electric conductivity. Thus, the P-TCN exhibited a high hydrogen evolution rate of 67 μmol h(-1) (0.1 g catalyst, λ >420 nm) in the presence of sacrificial agents, and an apparent quantum efficiency of 5.68 % at 420 nm, which is better than most of bulk g-C3 N4 reported. PMID:26692105

  4. influence of film thickness on optical constants of antimony-based bismuth-doped super-resolution mask layer

    NASA Astrophysics Data System (ADS)

    Lu, Xinmiao; Wu, Yiqun; Wang, Yang; Wei, Jinsong

    As the demand for ultrahigh density information storage continues to grow, recording mark size of several tens nanometer which is smaller than the optical diffraction limit is required in optical memory. Functional film super-resolution technique is one of practical approaches to overcome the optical diffraction limit. Optical constants are important parameters to optical films as super-resolution masks. In this paper, the influence of film thickness on optical constants of antimony-based bismuth-doped super-resolution mask layer is investigated. The structure of the samples with different thickness was studied by X-ray diffraction. The transmission spectrum was measured by spectrophotometry. The optical constants of the films in the range of 300-800 nm were measured by spectroscopic ellipsometry. The results show that the structure of the film transforms from amorphous state to crystal state when the thickness increases from 7 nm to 300 nm. In the range of 300-800 nm, the refractive index and extinction coefficient increase with increasing wavelength. The transmission decreases rapidly when the thickness increases from 7 nm to 30 nm. The influences of film thickness on optical constants are more significant in the thickness range of 7-50 nm than that in the thickness above 50 nm.

  5. Suppression of irreversible capacity loss in Li-rich layered oxide by fluorine doping

    NASA Astrophysics Data System (ADS)

    Song, Jay Hyok; Kapylou, Andrei; Choi, Hee Sung; Yu, Byong Yong; Matulevich, Evegeniya; Kang, Sun Ho

    2016-05-01

    Li[Li1/6Ni1/6Co1/6Mn1/2]O2-xFx (x = 0.00 to 0.07) materials were synthesized with low temperature heat treatment (700 °C) and their electrochemical performances were evaluated. With the addition of fluorine, the reversible capacity significantly increased as the irreversibility was suppressed during the first cycle. The reduction of irreversibility was mainly attributed to the enhanced first cycle efficiency of Li2MnO3-like component after the fluorine addition. By combining results of the X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), In-situ X-ray absorption spectroscopy (XAS) analyses, and first principle calculations, it was proposed that the presence of fluorine facilitated the reduction of cobalt and manganese ions in Li-rich layered oxide, and that the reduced transition metal (TM) ions suppressed structural changes.

  6. Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers

    NASA Astrophysics Data System (ADS)

    Jakabovič, J.; Lengyel, O.; Kováč, J.; Wong, T. C.; Lee, C. S.; Lee, S. T.

    2003-08-01

    The optical properties of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) in solutions and in solid films were studied by measuring the steady-state excitation and spontaneous emission spectra. The emission peak in the solid films shifted from 628 to 659 nm as the doping concentration of DCM changed from 0.9% to 11%. The optically pumped waveguide lasers were fabricated by coevaporation of Alq films with 1.3 wt % DCM onto gallium arsenide (GaAs) substrates using silicon dioxide (SiO2) and magnesium fluoride (MgF2) as cladding layers. Both types of waveguide laser structures showed optical confinement and simulated emission at a threshold pumping energy near 1.4 μJ. The result suggests a thin MgF2 may be used as a confinement layer that has the advantage of preparation by low-temperature evaporation.

  7. Distinct Oxygen Hole Doping in Different Layers of Sr2CuO4/La2CuO4 Superlattices

    SciTech Connect

    Smadici S.; Bozovic I.; Lee, J.C.T.; Rusydi, A.; Logvenov, G.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr{sub 2}CuO{sub 4-{delta}}/La{sub 2}CuO{sub 4} (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x {approx}< x{sub optimal} in bulk La{sub 2-x}Sr{sub x}CuO{sub 4} and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  8. Ga-doped ZnO transparent electrodes with TiO2 blocking layer/nanoparticles for dye-sensitized solar cells

    PubMed Central

    2012-01-01

    Ga-doped ZnO [GZO] thin films were employed for the transparent electrodes in dye-sensitized solar cells [DSSCs]. The electrical property of the deposited GZO films was as good as that of commercially used fluorine-doped tin oxide [FTO]. In order to protect the GZO and enhance the photovoltaic properties, a TiO2 blocking layer was deposited on the GZO surface. Then, TiO2 nanoparticles were coated on the blocking layer, and dye was attached for the fabrication of DSSCs. The fabricated DSSCs with the GZO/TiO2 glasses showed an enhanced conversion efficiency of 4.02% compared to the devices with the normal GZO glasses (3.36%). Furthermore, they showed better characteristics even than those using the FTO glasses, which can be attributed to the reduced charge recombination and series resistance. PMID:22222148

  9. Distinct oxygen hole doping in different layers of Sr₂CuO4-δ/La₂CuO₄ superlattices

    SciTech Connect

    Smadici, S.; Lee, J. C. T.; Rusydi, A.; Logvenov, G.; Bozovic, I.; Abbamonte, P.

    2012-03-28

    X-ray absorption in Sr₂CuO4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲xoptimal in bulk La2-xSrxCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

  10. One-step synthesis of layered yttrium hydroxides in immiscible liquid–liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

    SciTech Connect

    Watanabe, Mebae; Fujihara, Shinobu

    2014-02-15

    Inorganic–organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid–liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu{sup 3+} ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect. - Graphical abstract: The Eu{sup 3+}-doped layered yttrium hydroxide exhibits intense red photoluminescence after intercalation of benzoate ions. Display Omitted - Highlights: • Immiscible biphasic liquid systems were introduced to synthesize layered yttrium hydroxides. • The temperature of the biphasic systems does not exceed 80 °C in one step of the synthesis. • Hydrophobic organic anions were intercalated between the hydroxide layers in one pot. • Structure and morphology of the hydroxides were modulated by changing the kind of organic anions. • Eu{sup 3+}-doping led to red luminescence from the hydroxides in association with the intercalated organic anions.

  11. Characterization of MFIS Structure with Dy-Doped ZrO2 Buffer Layer

    NASA Astrophysics Data System (ADS)

    Im, J. H.; Ah, G. Z.; Han, D. H.; Park, B. E.

    2011-12-01

    To evaluate the feasibility of DZO thin film as an insulating buffer layer for ferroelectric gate field effect transistors (Fe-FETs) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure, we fabricated DZO/Si and BLT/DZO/Si structures by a sol-gel method. Equivalent oxide thickness (EOT) values of the DZO thin films were about 12.4nm, 11.9nm, 11.2nm and 11.1 nm for 650 °C, 700 °C 750 °C, and 800 °C,, respectively. Hysteresis was observed in all capacitance-voltage (C-V) curves of the DZO/Si structures, but hysteresis of the 750-°C-annealed film was negligible. The leakage current densities of the DZO thin films on Si showed the good characteristics regardless of the annealing temperature variations. The C-V characteristics of Au/300-nm-thick BLT/750-°C-annealed DZO/Si structure showed clockwise hysteresis loops, and the memory window width increased as the bias voltage increased. The maximum value of the memory window width was about 1.9 V at ±7 V.

  12. Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tomonobu; Terano, Akihisa; Mochizuki, Kazuhiro

    2016-05-01

    To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN layers were improved by using GaN substrates. However, the crystalline quality degraded when the carbon concentration was too high (1 × 1020 cm‑3), even in the case of GaN substrates. High breakdown voltages (approximately 7 kV under a lateral configuration) were obtained for the carbon-doped GaN layers on n-type GaN substrates when the carbon concentration was 5 × 1019 cm‑3. These results indicate that lateral power devices with high breakdown voltage can be fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN substrates.

  13. Hybrid Shubnikov--de Haas-photoluminescence analysis of two-dimensional electron density in strained quantum well structures with heavily doped contact layers

    SciTech Connect

    Lovejoy, M.L.; Simmons, J.A. ); Ho, P.; Martin, P.A. )

    1994-06-27

    A hybrid analysis technique is presented to accurately extract the two-dimensional (2D) electron density of PHEMT structures in which multiple subbands are occupied and severe parallel conduction by heavily doped contact layers occurs. Complications due to shorted Hall voltages by the parallel contact layer, which precludes simple Hall analysis, and to multiple subband occupation, which requires high magnetic-field sweeps in Shubnikov--de Haas (SdH) measurements, are eliminated by this hybrid analysis that combines SdH measurements with photoluminescence measurements to extract the total 2D density. Comparisons with other methods demonstrate the high accuracy of this new technique.

  14. Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate

    SciTech Connect

    Yoo, Hyang Keun; Kim, Hyeong-Do Sohn, Chang Hee; Sinn, Soobin; Oh, Ji Seop; Kuo, Cheng-Tai; Noh, Tae Won; Chang, Young Jun; Moreschini, Luca; Bostwick, Aaron; Rotenberg, Eli

    2015-03-23

    We investigated the electronic structures of strongly correlated metallic LaNiO{sub 3} (LNO) and semiconducting Nb-doped SrTiO{sub 3} (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO{sub 3} and LaAlO{sub 3}, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

  15. Polarization induced doped transistor

    DOEpatents

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  16. Perovskite-organic hybrid tandem solar cells using a nanostructured perovskite layer as the light window and a PFN/doped-MoO3/MoO3 multilayer as the interconnecting layer.

    PubMed

    Liu, Jian; Lu, Shunmian; Zhu, Lu; Li, Xinchen; Choy, Wallace C H

    2016-02-14

    In this study, we present a two-terminal perovskite (PVSK)-organic hybrid tandem solar cell with a nanostructured PVSK as the light window and a PFN/doped MoO3/MoO3 structure as the interconnecting layer (ICL). In this tandem structure, the PVSK layer is specially designed with a nanostructured surface morphology; thus the PCBM could be filled-up for forming intimately contacted interface with PVSK layers. This design could not only efficiently increase the device performance, it could also greatly remove the hysteresis of PVSK solar cells. The study indicates that doped MoO3 as the step layer plays a key role in protecting the underlying layer against multi-solution processes and aids in the efficient recombination of electrons and holes generated from the sub-cells. The hybrid tandem solar cell could achieve a high VOC of 1.58 V, which is the sum of those in the two sub-cells, and a high FF of 0.68, indicating the effectiveness of the multilayer ICL. PMID:26809656

  17. Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices.

    PubMed

    Srathongluan, Pornpimol; Vailikhit, Veeramol; Teesetsopon, Pichanan; Choopun, Supab; Tubtimtae, Auttasit

    2016-11-01

    This work demonstrates the synthesis of a novel double-layered Cu2-xTe/MnTe structure on a WO3 photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu2-xTe(17) ∼5-10nm and MnTe(3) ∼2nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu2-xTe(17)/MnTe(11) are ∼50 and 150nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu2-xTe nanoparticles (NPs), leading to a narrower Eg equal to 0.58eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO3, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO3/boron-doped [Cu2-xTe(17)/MnTe(11)] structure with a photocurrent density (Jsc)=16.43mA/cm(2), an open-circuit voltage (Voc)=0.305V and a fill factor (FF)=28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material. PMID:27451035

  18. Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jung, Sang Hyun; Kim, Chang Zoo; Kim, Youngjo; Jun, Dong Hwan; Kang, Ho Kwan; Kim, Hogyoung

    2016-03-01

    Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping. Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping. These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.

  19. Eu{sup 3+} luminescence enhancement by intercalation of benzenepolycarboxylic guests into Eu{sup 3+}-doped layered gadolinium hydroxide

    SciTech Connect

    Gu, Qingyang; Pan, Guohua; Ma, Teng; Huang, Gailing; Sun, Genban; Ma, Shulan; Yang, Xiaojing

    2014-05-01

    Graphical abstract: Two benzenepolycarboxylic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into NO{sub 3}–LGdH:Eu, in which different structures of the compounds resulted in varied arrangement in the gallery. The two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers. - Highlights: • We report the intercalation of benzenepolycarboxylic organic sensitizers into LRH. • We study the intercalation structure and the arrangement of the interlayer guests. • The two organic compounds can markedly enhance the luminescence of Eu{sup 3+}. • There exists efficient energy transfer between organic guests and Eu{sup 3+} centers. • This material opens a route for fabricating new multifunctional luminescent materials. - Abstract: Two benzenepolycarboxylic organic sensitizers, 1,3,5-benzenetricarboxylic acid (BTA) and 1,2,4,5-benzenetetracarboxylic acid (BA), were intercalated into the gallery of NO{sub 3}{sup −} type Eu{sup 3+}-doped layered gadolinium hydroxide (NO{sub 3}–LGdH:Eu). CHN analysis, FTIR, and SEM were employed to characterize the intercalation structures of the as-prepared organic/inorganic hybrids. The area per unit charge (S{sub charge}) was used to explain the intercalation structure and the arrangement of the interlayer guests. Different structures of the two organic compounds resulted in varied arrangement of guests. Photoluminescence studies indicated that both of the two organic compounds especially BA markedly enhanced the red luminescence of Eu{sup 3+} due to efficient energy transfer between the organic guests and Eu{sup 3+} centers.

  20. Cobalt Ferrite Bearing Nitrogen-Doped Reduced Graphene Oxide Layers Spatially Separated with Microporous Carbon as Efficient Oxygen Reduction Electrocatalyst.

    PubMed

    Kashyap, Varchaswal; Singh, Santosh K; Kurungot, Sreekumar

    2016-08-17

    The present work discloses how high-quality dispersion of fine particles of cobalt ferrite (CF) could be attained on nitrogen-doped reduced graphene oxide (CF/N-rGO) and how this material in association with a microporous carbon phase could deliver significantly enhanced activity toward electrochemical oxygen reduction reaction (ORR). Our study indicates that the microporous carbon phase plays a critical role in spatially separating the layers of CF/N-rGO and in creating a favorable atmosphere to ensure the seamless distribution of the reactants to the active sites located on CF/N-rGO. In terms of the ORR current density, the heat-treated hybrid catalyst at 150 °C (CF/N-rGO-150) is found to be clearly outperforming (7.4 ± 0.5 mA/cm(2)) the state-of-the-art 20 wt % Pt-supported carbon catalyst (PtC) (5.4 ± 0.5 mA/cm(2)). The mass activity and stability of CF-N-rGO-150 are distinctly superior to PtC even after 5000 electrochemical cycles. As a realistic system level exploration of the catalyst, testing of a primary zinc-air battery could be demonstrated using CF/N-rGO-150 as the cathode catalyst. The battery is giving a galvanostatic discharge time of 15 h at a discharge current density of 20 mA/cm(2) and a specific capacity of ∼630 mAh g(-1) in 6 M KOH by using a Zn foil as the anode. Distinctly, the battery performance of this system is found to be superior to that of PtC in less concentrated KOH solution as the electrolyte. PMID:27464229

  1. Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

    PubMed

    Vasu, K; Sreedhara, M B; Ghatak, J; Rao, C N R

    2016-03-01

    Employing atomic layer deposition, we have grown p-type epitaxial undoped and N-doped anatase TiO2(001) thin films on c-axis Al2O3 substrate. From X-ray diffraction and transmission electron microscopy studies, crystallographic relationships between the film and the substrate are found to be (001)TiO2//(0001)Al2O3 and [1̅10]TiO2//[011̅0]Al2O3. N-doping in TiO2 thin films enhances the hole concentration and mobility. The optical band gap of anatase TiO2 (3.23 eV) decreases to 3.07 eV upon N-doping. The epitaxial films exhibit room-temperature ferromagnetism and photoresponse. A TiO2-based homojunction diode was fabricated with rectification from the p-n junction formed between N-doped p-TiO2 and n-TiO2. PMID:26963716

  2. High color rending index and high-efficiency white organic light-emitting diodes based on the control of red phosphorescent dye-doped hole transport layer.

    PubMed

    Zhang, M Y; Wang, F F; Wei, N; Zhou, P C; Peng, K J; Yu, J N; Wang, Z X; Wei, B

    2013-01-14

    We have investigated the transport characteristics of red phosphorescent dye bis(1-(phenyl)isoquinoline) iridium (III) acetylanetonate (Ir(piq)₂acac) doped 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), and found that the increasing doping ratio was facilitated to improve the ability of hole transporting. A high color rendering index (CRI) and high-efficiency WOLED was achieved by employing Ir(piq)₂acac doped TCTA film as an effective red emissive layer due to the generation of charge transfer complex (CTC) at the interface. The relative proportion in red: green: blue emission intensity can be controlled by the CTC concentration to obtain high CRI WOLEDs. The WOLED with an optimal red dye doping concentration of 5 wt% exhibits a high CRI of 89 and a power efficiency of 31.2 lm/W and 27.5 lm/W at the initial luminance and 100 cd/m², respectively. The devices show little variation of the Commission Internationale de I'Eclairage coordinates in a wide range of luminance. PMID:23389269

  3. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    PubMed

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  4. Niobium Doping Effects on TiO2 Mesoscopic Electron Transport Layer-Based Perovskite Solar Cells.

    PubMed

    Kim, Dong Hoe; Han, Gill Sang; Seong, Won Mo; Lee, Jin-Wook; Kim, Byeong Jo; Park, Nam-Gyu; Hong, Kug Sun; Lee, Sangwook; Jung, Hyun Suk

    2015-07-20

    Perovskite solar cells (PSCs) are the most promising candidates as next-generation solar energy conversion systems. To design a highly efficient PSC, understanding electronic properties of mesoporous metal oxides is essential. Herein, we explore the effect of Nb doping of TiO2 on electronic structure and photovoltaic properties of PSCs. Light Nb doping (0.5 and 1.0 at %) increased the optical band gap slightly, but heavy doping (5.0 at %) distinctively decreased it. The relative Fermi level position of the conduction band is similar for the lightly Nb-doped TiO2 (NTO) and the undoped TiO2 whereas that of the heavy doped NTO decreased by as much as ∼0.3 eV. The lightly doped NTO-based PSCs exhibit 10 % higher efficiency than PSCs based on undoped TiO2 (from 12.2 % to 13.4 %) and 52 % higher than the PSCs utilizing heavy doped NTO (from 8.8 % to 13.4 %), which is attributed to fast electron injection/transport and preserved electron lifetime, verified by transient photocurrent decay and impedance studies. PMID:25891531

  5. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NASA Astrophysics Data System (ADS)

    Macco, B.; Deligiannis, D.; Smit, S.; van Swaaij, R. A. C. M. M.; Zeman, M.; Kessels, W. M. M.

    2014-12-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 × 1019-7 × 1020 cm-3), which is explained by a change in the TCO workfunction. Additionally, it is shown that a ˜10-15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si:H by subsequent sputtering, which is correlated to ALD film closure at this thickness.

  6. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    SciTech Connect

    Kalkofen, Bodo Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P.; Garke, Bernd; Lisker, Marco; Gargouri, Hassan

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  7. Synthesis and characterization of UV-treated Fe-doped bismuth lanthanum titanate-doped TiO2 layers in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Song, Myoung Geun; Bark, Chung Wung

    2016-06-01

    Dye-sensitized solar cells (DSSCs) based on titanium dioxide (TiO2) have been extensively studied because they constitute promising low-cost alternatives to their conventional semiconductor-based counterparts. However, much of the effort aimed at achieving high conversion efficiencies has focused on dye and liquid electrolytes. In this work, we report the photovoltaic characteristics of DSSCs fabricated by mixing TiO2 with Fe-doped bismuth lanthanum titanate (Fe-BLT). These nanosized Fe-BLT powders were prepared by using a high-energy ball-milling process. In addition, we used a UV radiation-ozone (UV-O3) treatment to change the surface wettability of TiO2 from hydrophobic to hydrophilic and thereby prevented the easy separation of the Fe-BLT-mixed TiO2 from the fluorine-doped tin-oxide (FTO) coating glass.

  8. Final report on LDRD Project: The double electron layer tunneling transistor (DELTT)

    SciTech Connect

    Simmons, J.A.; Moon, J.S.; Blount, M.A.

    1998-06-01

    This report describes the research accomplishments achieved under the LDRD Project ``Double Electron Layer Tunneling Transistor.`` The main goal of this project was to investigate whether the recently discovered phenomenon of 2D-2D tunneling in GaAs/AlGaAs double quantum wells (DQWs), investigated in a previous LDRD, could be harnessed and implemented as the operating principle for a new type of tunneling device the authors proposed, the double electron layer tunneling transistor (DELTT). In parallel with this main thrust of the project, they also continued a modest basic research effort on DQW physics issues, with significant theoretical support. The project was a considerable success, with the main goal of demonstrating a working prototype of the DELTT having been achieved. Additional DELTT advances included demonstrating good electrical characteristics at 77 K, demonstrating both NMOS and CMOS-like bi-stable memories at 77 K using the DELTT, demonstrating digital logic gates at 77 K, and demonstrating voltage-controlled oscillators at 77 K. In order to successfully fabricate the DELTT, the authors had to develop a novel flip-chip processing scheme, the epoxy-bond-and-stop-etch (EBASE) technique. This technique was latter improved so as to be amenable to electron-beam lithography, allowing the fabrication of DELTTs with sub-micron features, which are expected to be extremely high speed. In the basic physics area they also made several advances, including a measurement of the effective mass of electrons in the hour-glass orbit of a DQW subject to in-plane magnetic fields, and both measurements and theoretical calculations of the full Landau level spectra of DQWs in both perpendicular and in-plane magnetic fields. This last result included the unambiguous demonstration of magnetic breakdown of the Fermi surface. Finally, they also investigated the concept of a far-infrared photodetector based on photon assisted tunneling in a DQW. Absorption calculations showed a

  9. Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

    NASA Astrophysics Data System (ADS)

    Jung, Hyung Hwan; Kwon, Jung-Dae; Lee, Sunghun; Su Kim, Chang; Nam, Kee-Seok; Jeong, Yongsoo; Chung, Kwun-Bum; Yoon Ryu, Seung; Ocak, Tülay; Eray, Aynur; Kim, Dong-Ho; Park, Sung-Gyu

    2013-08-01

    This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

  10. Doping dependence of the coupling of electrons to bosonic modes in the single-layer high-temperature Bi2Sr2CuO6 superconductor

    SciTech Connect

    Meevasana, W.

    2010-06-02

    A recent highlight in the study of high-Tc superconductors is the observation of band renormalization or self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally doped and strongly overdoped, nonsuperconducting single-layer Bi-cuprate (Bi{sub 2}Sr{sub 2}CuO{sub 6}). In addition to the appearance of a strong overall weakening, we also find that the weight of the self-energy in the overdoped system shifts to higher energies. We present evidence that this is related to a change in the coupling to c-axis phonons due to the rapid change of the c-axis screening in this doping range.

  11. EPR and Mixed Ionic-Electronic Conductivity Studies of Pure and Copper Doped Layered Lithium Sodium Titanate (LiNa)Ti3O7

    NASA Astrophysics Data System (ADS)

    Pal, Dharmendra; Abdi, Shahanshah Haider; Tripathi, Ghanshyam; Maurya, Virendra Kumar; Khan, Sagir Ahmed; Yadav, Jitendra Kumar; Sachan, Kapil

    Sodium (50%) mixed layered Li2Ti3O7 and its 0.01, 0.05 & 1.0 molar percentage CuO doped derivatives have been prepared through high temperature solid state reaction and characterized through X- ray diffractometer, d.c. conductivity in the temperature range 373-700K and room temperature EPR investigation. Room temperature X-ray diffratograms confirm the phase evolution. Room temperature electron paramagnetic resonance (EPR) data show that Cu2+ occupies Ti4+ lattice sites giving rise to electric dipoles which increases electric permittivity. The absorption peak in EPR spectra gets broadened due to increased exchange interaction in heavily doped derivatives. Four distinct regions have been identified in the Ln(σT) versus 1000/T plots. Various electrical conduction mechanisms have involved during the whole temperature range of study

  12. One-step synthesis of layered yttrium hydroxides in immiscible liquid-liquid systems: Intercalation of sterically-bulky hydrophobic organic anions and doping of europium ions

    NASA Astrophysics Data System (ADS)

    Watanabe, Mebae; Fujihara, Shinobu

    2014-02-01

    Inorganic-organic layered rare-earth compounds were synthesized on the basis of a biphasic liquid-liquid system in one pot. Layered yttrium hydroxides (LYHs) were chosen as a host material for the intercalation of hydrophobic organic guest anions such as benzoate, sebacate, or laurate. In a typical synthesis, an organic phase dissolving carboxylic acid was placed in contact with an equal amount of an aqueous phase dissolving yttrium nitrate n-hydrate and urea. At elevated temperatures up to 80 °C, urea was hydrolyzed to release hydroxyl anions which were used to form yttrium hydroxide layers. LYHs were then precipitated with the intercalation of carboxylate anions delivered from the organic phase under the distribution law. The structure and the morphology of the LYHs could be modulated by the intercalated anions. Doped with Eu3+ ions, the LYHs exhibited red photoluminescence which was enhanced by the intercalated anions due to the antenna effect.

  13. Role of Detuning in the Final Stage of Subharmonic Mode Transition in Boundary Layers

    NASA Technical Reports Server (NTRS)

    Corke, Thomas C.

    2007-01-01

    This work involves mechanisms for transition to turbulence in a Blasius boundary layer through resonant interactions between a plane Tollmien-Schlichting Wave and pairs of oblique waves with equal-but-opposite wave angles. When the frequency of the TS wave is exactly twice that of the oblique waves, we have a "tuned" subharmonic resonance. This leads to the enhanced growth of the oblique modes. Following this, other nonlinear interactions lead to the growth of other 3-D modes which are harmonically based, along with a 3-D mean flow distortion. In the final stage of this process, a gradual spectral filling occurs which we have traced to the growth of fundamental and subharmonic side-band modes. To simulate this with controlled inputs, we introduced the oblique wave pairs at the same conditions, but shifted the frequency of the plane TS mode (by as much as 12 percent) so that it was not exactly twice that of the 3-D modes. These "detuned" conditions also lead to the enhanced growth of the oblique modes, as well as discrete side-band modes which come about through sum and difference interactions. Other interactions quickly lead to a broad band of discrete modes. Of particular importance is the lowest difference frequency which produces a low frequency modulation similar to what has been seen in past experiments with natural 3-D mode input. Cross-bispectral analysis of time series allows us to trace the origin and development of the different modes. Following these leads to a scenario which we believe is more relevant to conditions of "natural" transitions, where low amplitude background disturbances either lead to the gradual detuning of exact fundamental/subharmonic resonance, or in which 3-D mode resonance is detuned from the onset. The results contrast the two conditions, and document the propensity of the 2-D/3-D mode interactions to become detuned.

  14. Enhancement of photoinduced electrical properties of Al-doped ZnO/BiFeO3 layered thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Katayama, Takeshi; Sakamoto, Wataru; Yuitoo, Isamu; Takeuchi, Teruaki; Hayashi, Koichiro; Yogo, Toshinobu

    2015-10-01

    Polycrystalline BiFeO3 and Al-doped ZnO/BiFeO3 bilayered thin films were prepared on Pt/TiOx/SiO2/Si substrates by chemical solution deposition. Their photoinduced electrical properties under blue light irradiation were characterized. The rapid on/off response of the photocurrent to light in unpoled BiFeO3 (BFO) and Al-doped ZnO/BiFeO3 (AZO/BFO) thin films was demonstrated. The AZO/BFO layered film exhibited an approximately triple-digit larger photocurrent in comparison with a BFO single-layer film. This is attributable to the photoexcited carrier generation effect at the interface between AZO (n-type) and BFO (p-type) films. Furthermore, in the AZO/BFO layered structure, the direction of the internal bias electric field caused by the space charge distribution in the unpoled BFO film is the same as that of the built-in electric field by forming a p-n junction of AZO and BFO layers. Photovoltaic properties were also improved by fabricating such a layered film. On the other hand, when the placement of BFO to AZO was reversed, the photoelectric current decreased to approximately one-tenth of that of the BFO single-layer film. In the BFO/AZO film, the internal electric field at the p-n junction between BFO and AZO is considered to have an orientation opposite to the self-bias field formed in the BFO film.

  15. Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

    NASA Astrophysics Data System (ADS)

    Kim, Eom-Ji; Lee, Won-Ho; Yoon, Sung-Min

    2016-03-01

    We investigated the effects of the distance between incorporated Al layers on the characteristics of thin-film transistors (TFTs) using Al-doped ZnO (AZO) as the active channels. The intervals between the Al layers were controlled by designing the sequences of Al cycles during the atomic-layer deposition. Two configurations were designed as “scatter” or “focus”, in which the incorporated Al layers were dispersed to bottom and top sides or concentrated on the center region. Electrical conductivities of “scatter” and “focus” films were observed to be different. While the dispersed Al layers could work as dopants, a too-close interval between the Al layers suppressed carrier transport, even with the same incorporated Al amounts. These differences were reflected on the device characteristics. The TFT performance of the “scatter” device was better than that of the “focus” device. Consequently, adequately dispersed Al layers in the AZO channel are very important for improving device performance.

  16. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiN{sub x} films by introducing phosphorous catalytic-doped layer

    SciTech Connect

    Thi, Trinh Cham Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2014-07-28

    We improve the passivation property of n-type crystalline silicon (c-Si) surface passivated with a catalytic chemical vapor deposited (Cat-CVD) Si nitride (SiN{sub x}) film by inserting a phosphorous (P)-doped layer formed by exposing c-Si surface to P radicals generated by the catalytic cracking of PH{sub 3} molecules (Cat-doping). An extremely low surface recombination velocity (SRV) of 2 cm/s can be achieved for 2.5 Ω cm n-type (100) floating-zone Si wafers passivated with SiN{sub x}/P Cat-doped layers, both prepared in Cat-CVD systems. Compared with the case of only SiN{sub x} passivated layers, SRV decreases from 5 cm/s to 2 cm/s. The decrease in SRV is the result of field effect created by activated P atoms (donors) in a shallow P Cat-doped layer. Annealing process plays an important role in improving the passivation quality of SiN{sub x} films. The outstanding results obtained imply that SiN{sub x}/P Cat-doped layers can be used as promising passivation layers in high-efficiency n-type c-Si solar cells.

  17. Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

    SciTech Connect

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge; Zhao, Yongbiao; Zhang, Hongmei

    2014-06-28

    By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

  18. The effect of doping (Mn,B)3O4 materials as protective layers in different metallic interconnects for Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Miguel-Pérez, Verónica; Martínez-Amesti, Ana; Nó, María Luisa; Larrañaga, Aitor; Arriortua, María Isabel

    2013-12-01

    Spinel oxides with the general formula of (Mn,B)3O4 (B = Co, Fe) were used as barrier materials between the cathode and the metallic interconnect to reduce the rate of cathode degradation by Cr poisoning. The effect of doping at the B position was investigated terms of microstructure and electrical conductivity to determine its behaviour and effectiveness as a protective layer in contact with three metallic materials (Crofer 22 APU, SS430 and Conicro 4023 W 188). The analysis showed that the use of these materials considerably decreased the reactivity and diffusion of Cr between the cathode and the metallic interconnects. The protective layer doped with Fe at the B position exhibited the least amount of reactivity with the interconnector and cathode materials. The worst results were observed for SS430 cells coated with a protective layer perhaps due to their low Cr content. The Crofer 22 APU and Conicro 4023 W 188 samples exhibited very similar conductivity results in the presence of the MnCo1.9Fe0.1O4 protective coating. As a result, these two material combinations are a promising option for use as bipolar plates in SOFC.

  19. New Approach for High-Voltage Electrical Double-Layer Capacitors Using Vertical Graphene Nanowalls with and without Nitrogen Doping.

    PubMed

    Chi, Yu-Wen; Hu, Chi-Chang; Shen, Hsiao-Hsuan; Huang, Kun-Ping

    2016-09-14

    Integrating various devices to achieve high-performance energy storage systems to satisfy various demands in modern societies become more and more important. Electrical double-layer capacitors (EDLCs), one kind of the electrochemical capacitors, generally provide the merits of high charge-discharge rates, extremely long cycle life, and high efficiency in electricity capture/storage, leading to a desirable device of electricity management from portable electronics to hybrid vehicles or even smart grid application. However, the low cell voltage (2.5-2.7 V in organic liquid electrolytes) of EDLCs lacks the direct combination of Li-ion batteries (LIBs) and EDLCs for creating new functions in future applications without considering the issue of a relatively low energy density. Here we propose a guideline, "choosing a matching pair of electrode materials and electrolytes", to effectively extend the cell voltage of EDLCs according to three general strategies. Based on the new strategy proposed in this work, materials with an inert surface enable to tolerate a wider potential window in commercially available organic electrolytes in comparison with activated carbons (ACs). The binder-free, vertically grown graphene nanowalls (GNW) and nitrogen-doped GNW (NGNW) electrodes respectively provide good examples for extending the upper potential limit of a positive electrode of EDLCs from 0.1 to 1.5 V (vs Ag/AgNO3) as well as the lower potential limit of a negative electrode of EDLCs from -2.0 V to ca. -2.5 V in 1 M TEABF4/PC (propylene carbonate) compared to ACs. This newly designed asymmetric EDLC exhibits a cell voltage of 4 V, specific energy of 52 Wh kg(-1) (ca. a device energy density of 13 Wh kg(-1)), and specific power of 8 kW kg(-1) and ca. 100% retention after 10,000 cycles charge-discharge, reducing the series number of EDLCs to enlarge the module voltage and opening the possibility for directly combining EDLCs and LIBs in advanced applications. PMID:27548051

  20. Effects of Si-doping on structural, electrical, and optical properties of polar and non-polar AlGaN epi-layers

    NASA Astrophysics Data System (ADS)

    Yang, Hongquan; Zhang, Xiong; Wang, Shuchang; Wang, Yi; Luan, Huakai; Dai, Qian; Wu, Zili; Zhao, Jianguo; Cui, Yiping

    2016-08-01

    The polar (0001)-oriented c-plane and non-polar (11 2 bar 0) -oriented a-plane wurtzite AlGaN epi-layers were successfully grown on polar (0001)-oriented c-plane and semi-polar (1 1 bar 02) -oriented r-plane sapphire substrates, respectively with various Si-doping levels in a low pressure metal organic chemical vapor deposition (MOCVD) system. The morphological, structural, electrical, and optical properties of the polar and non-polar AlGaN epi-layers were studied with scanning electron microscopy (SEM), X-ray diffraction (XRD), Hall effect, and Raman spectroscopy. The characterization results show that Si dopants incorporated into the polar and non-polar AlGaN films induced a relaxation of compressive residual strain and a generation of biaxial tensile strain on the surface in consequence of the dislocation climbing. In particular, it was found that the Si-induced compressive strain relaxation in the non-polar AlGaN samples can be promoted by the structural anisotropy as compared with the polar counterparts. The gradually increased relaxation of compressive residual strain in both polar and non-polar AlGaN samples with increasing Si-doping level was attributed to the Si-induced enhancement in the opportunity for the dislocations to interact and annihilate. This implies that the crystal quality for both polar and non-polar AlGaN epi-layers can be remarkably improved by Si-doping.

  1. Final Report for Award DE-SC0005403. Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping

    SciTech Connect

    Hertz, Joshua L.; Prasad, Ajay K.

    2015-09-06

    The enclosed document provides a final report to document the research performed at the University of Delaware under Grant DE-SC0005403: Improved Electrochemical Performance of Strained Lattice Electrolytes via Modulated Doping. The ultimate goal of this project was to learn how to systematically strain the inter-atomic distance in thin ceramic films and how to use this newfound control to improve the ease by which oxygen ions can conduct through the films. Increasing the ionic conductivity of ceramics holds the promise of drastic improvements in the performance of solid oxide fuel cells, chemical sensors, gas permeation membranes, and related devices. Before this work, the experimental evidence advocating for strain-based techniques was often controversial and poorly characterized. Enabling much of this work was a new method to quickly create a very wide range of ceramic nanostructures that was established during the first phase of the project. Following this initial phase, we created a variety of promising nanostructured epitaxial films and multilayers with systematic variations in lattice mismatch and dopant content. Over the course of the work, a positive effect of tensile atomic strain on the oxygen conductivity was conclusively found using a few different forms of samples and experimental techniques. The samples were built by sputtering, an industrially scalable technique, and thus the technological implementation of these results may be economically feasible. Still, two other results consistently achieved over multiple efforts in this work give pause. The first of these results was that very specific, pristine surfaces upon which to build the nanostructures were strictly required in order to achieve measurable results. The second of these results was that compressively strained films with concomitant reductions in oxygen conductivity are much easier to obtain relative to tensile-strained films with increased conductivity.

  2. High-power-efficiency hybrid white organic light-emitting diodes with a single emitting layer doped with blue delayed fluorescent and yellow phosphorescent emitters

    NASA Astrophysics Data System (ADS)

    Song, Wook; Lee, Jun Yeob

    2015-09-01

    High-efficiency hybrid white organic light-emitting diodes (HWOLEDs) with a blue thermally activated delayed fluorescent (TADF) emitter and a yellow phosphorescent emitter doped in a single emitting layer were developed. Exciton harvesting by the blue TADF and yellow phosphorescent emitters rendered both singlet and triplet excitons to contribute to the white emission, which leads to a high quantum efficiency of 22.4% and a power efficiency of 60.3 lm W-1 in the HWOLEDs. In addition, the electroluminescence spectra of the HWOLEDs were kept stable from 100 cd m-2 to 5, 000 cd m-2.

  3. Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

    NASA Astrophysics Data System (ADS)

    Chikoidze, E.; Boshta, M.; Gomaa, M.; Tchelidze, T.; Daraselia, D.; Japaridze, D.; Shengelaya, A.; Dumont, Y.; Neumann-Spallart, M.

    2016-05-01

    This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm‑3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K‑1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.

  4. Effect of seed layer on the self assembly of spray pyrolyzed Al-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Dwivedi, Charu; Dutta, V.

    2013-03-01

    Al-doped ZnO (AlZO) nanorod arrays and nanostructures were fabricated on seed coated glass substrates via CoSP (Continuous Spray Pyrolysis) reactor. The as-synthesized aluminium doped ZnO nanoparticles and nanorods were analyzed through different characterization techniques. There were no significant changes found in the structure with doping of Al but the morphology of the film changed to branched nanorods and nanosheets with the change in seed solution and annealing temperature, respectively. Also, the current-voltage curves of the ZnO and AZO nanorod arrays was measured and it was found that the current response of AZO nanorods was higher than that of ZnO nanorods, proving the Al incorporation as a dopant.

  5. Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

    NASA Astrophysics Data System (ADS)

    Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

    2013-06-01

    In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

  6. Synthesis and visible light photocatalysis of Fe-doped TiO{sub 2} mesoporous layers deposited on hollow glass microbeads

    SciTech Connect

    Cui Lifeng; Wang Yuansheng; Niu Mutong; Chen Guoxin; Cheng Yao

    2009-10-15

    Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition and calcining treatment. The adherence of TiO{sub 2} mesoporous layers to the surfaces of hollow glass microbeads prevented the aggregation of TiO{sub 2} nanoparticles and benefited to their catalytic activity. The doping of Fe ions makes the absorption edge of the TiO{sub 2} based nano-composite red-shifted into the visible region. An effective photodegradation of the methyl orange aqueous solution was achieved under visible light (lambda>420 nm) irradiation, revealing the potential applicability of such nano-composite in some industry fields, such as air and water purifications. - Graphical abstract: Nano-composite of Fe-doped anatase TiO{sub 2} nanocrystals loaded on the hollow glass microbeads was prepared by co-thermal hydrolysis deposition. Photodegradation of the methyl orange was achieved under visible light irradiation, revealing the potential applicability of such nano-composite in some industry fields.

  7. Layered Lithium-Rich Oxide Nanoparticles Doped with Spinel Phase: Acidic Sucrose-Assistant Synthesis and Excellent Performance as Cathode of Lithium Ion Battery.

    PubMed

    Chen, Min; Chen, Dongrui; Liao, Youhao; Zhong, Xiaoxin; Li, Weishan; Zhang, Yuegang

    2016-02-01

    Nanolayered lithium-rich oxide doped with spinel phase is synthesized by acidic sucrose-assistant sol-gel combustion and evaluated as the cathode of a high-energy-density lithium ion battery. Physical characterizations indicate that the as-synthesized oxide (LR-SN) is composed of uniform and separated nanoparticles of about 200 nm, which are doped with about 7% spinel phase, compared to the large aggregated ones of the product (LR) synthesized under the same condition but without any assistance. Charge/discharge demonstrates that LR-SN exhibits excellent rate capability and cyclic stability: delivering an average discharge capacity of 246 mAh g(-1) at 0.2 C (1C = 250 mA g(-1)) and earning a capacity retention of 92% after 100 cycles at 4 C in the lithium anode-based half cell, compared to the 227 mA g(-1) and the 63% of LR, respectively. Even in the graphite anode-based full cell, LR-SN still delivers a capacity of as high as 253 mAh g(-1) at 0.1 C, corresponding to a specific energy density of 801 Wh kg(-1), which are the best among those that have been reported in the literature. The separated nanoparticles of the LR-SN provide large sites for charge transfer, while the spinel phase doped in the nanoparticles facilitates lithium ion diffusion and maintains the stability of the layered structure during cycling. PMID:26799282

  8. Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor

    NASA Astrophysics Data System (ADS)

    Kim, Dongha; Park, Hyungjin; Bae, Byeong-Soo

    2016-03-01

    In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of -0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ṡ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.

  9. The effects of ultraviolet-ozone-treated ultra-thin MnO-doped ZnO film as anode buffer layer on the electrical characteristics of organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lu, Hsin-Wei; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

    2015-11-01

    In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing an MnO-doped ZnO film as a buffer layer between the indium tin oxide (ITO) electrode and the α-naphthylphenylbiphenyldiamine hole transport layer. The enhancement mechanism was systematically investigated, and the X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone-treated MnO-doped ZnO film. With this film, the work function increased from 4.8 eV (standard ITO electrode (˜ 10 ±5 Ω/◻ )) to 5.27 eV (UV-ozone-treated MnO-doped ZnO deposited on the ITO electrode with 1 wt. % for 1 nm), while the surface roughness of the UV-ozone-treated MnO-doped ZnO film was smoother than that of the ITO electrode. The deposited UV-ozone-treated MnO-doped ZnO film increased the surface energy and polarity of the ITO surface, as determined from contact angle measurements. Further, results from admittance spectroscopy showed that the inserted UV-ozone-treated MnO-doped ZnO film increased the capacitance and conductance of the OLEDs. It was also found that the carrier injection increased in the space-charge region when the UV-ozone-treated MnO-doped ZnO buffer layer was inserted. Moreover, the turn-on voltage of the devices decreased from 3.8 V to 3.2 V, the luminance increased from 7588 cd/m2 to 20 350 cd/m2, and the current efficiency increased from 3.2 cd/A to 5.8 cd/A when a 1 nm-thick UV-ozone-treated MnO-doped ZnO film with 1 wt. % was inserted as a buffer layer in the OLEDs.

  10. Rapid Melt and Resolidification of Surface Layers Using Intense, Pulsed Ion Beams Final Report

    SciTech Connect

    Renk, Timothy J. Turman, Bob Senft, Donna Sorensen, Neil R. Stinnett, Regan Greenly, John B. Thompson, Michael O. Buchheit, Rudolph G.

    1998-10-02

    The emerging technology of pulsed intense ion beams has been shown to lead to improvements in surface characteristics such as hardness and wear resistance, as well as mechanical smoothing. We report hereon the use of this technology to systematically study improvements to three types of metal alloys - aluminum, iron, and titanium. Ion beam tieatment produces a rapid melt and resolidification (RMR) of the surface layer. In the case of a predeposited thin-fihn layer, the beam mixes this layer into the substrate, Ieading to improvements that can exceed those produced by treatment of the alloy alone, In either case, RMR results in both crystal refinement and metastable state formation in the treated surface layer not accessible by conventional alloy production. Although more characterization is needed, we have begun the process of relating these microstructural changes to the surface improvements we discuss in this report.

  11. Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X  =  S, Se and Te) layer doped with NX or AgZn

    NASA Astrophysics Data System (ADS)

    Jiang, Xin-he; Shi, Jun-jie; Zhang, Min; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Cao, Xiong; Wu, Meng; Liao, Zhi-min

    2016-03-01

    The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations by combining the standard density functional theory and hybrid functional methods. We find that p-type doping can be realized by inserting an ultrathin ZnX (X  =  S, Se and Te) layer, doped with NX or AgZn, into ZnO to form short-period (ZnO) m /(ZnX) n (m  >  n) superlattices. The formation energy is the lowest for NX or AgZn in the ZnX layer. The Zn-rich (Zn-poor) condition is favourable for the formation of the NX (AgZn) defect. Compensation by the native defects can be avoided for the Ag-doped (ZnO) m /(ZnX) n under the Zn-poor condition. The N (Ag) acceptor activation energy can be reduced from 0.45 (0.43) eV in ZnO to 0.33 (0.32) eV in (ZnO)5/(ZnS)1, 0.20 (0.24) eV in (ZnO)5/(ZnSe)1 and 0.12 (0.13) eV in (ZnO)5/(ZnTe)1, which is caused by the ZnX-monolayer modulation to the local structure around the NX or AgZn defect and the high-lying p-derived valence bands. Moreover, the band gaps can be tuned from 3.40 eV of ZnO to 3.21 eV of (ZnO)5/(ZnS)1, 2.41 eV of (ZnO)5/(ZnSe)1 and 2.26 eV of (ZnO)5/(ZnTe)1, which is promising for the integration of ZnO-based white light-emitting diodes.

  12. Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

    NASA Astrophysics Data System (ADS)

    Kurai, Satoshi; Miyake, Hideto; Hiramatsu, Kazumasa; Yamada, Yoichi

    2016-01-01

    Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al0.61Ga0.39N epitaxial layers with Si concentrations of 3.0-37 × 1017 cm-3 were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractions of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al0.61Ga0.39N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of VAl did not contribute to the linewidth broadening, unlike the case of the VAl clusters.

  13. Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer.

    PubMed

    Kim, Jun Young; Cho, Eunae; Kim, Jaehoon; Shin, Hyeonwoo; Roh, Jeongkyun; Thambidurai, Mariyappan; Kang, Chan-mo; Song, Hyung-Jun; Kim, SeongMin; Kim, Hyeok; Lee, Changhee

    2015-09-21

    We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%. PMID:26406762

  14. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization.

    PubMed

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S N; Chew, B T

    2015-01-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications. PMID:26643279

  15. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    PubMed Central

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

    2015-01-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications. PMID:26643279

  16. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Jagadamma, Lethy K.; Al-Senani, Mohammed; Amassian, Aram

    2015-10-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  17. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    NASA Astrophysics Data System (ADS)

    Amiri, Ahmad; Ahmadi, Goodarz; Shanbedi, Mehdi; Savari, Maryam; Kazi, S. N.; Chew, B. T.

    2015-12-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presence of liquid-phase, microwave-assisted methods. An industrially-scalable, cost-effective, and simple approach was employed to synthesize HCG and HCNDG, resulting in few-layered graphene and nitrogen-doped graphene with large specific surface area. Then, HCG and HCNDG were utilized for manufacturing a new class of carbon nanostructure-based electrodes for use in large-scale CDI equipment. The electrosorption results indicated that both the HCG and HCNDG have fairly large specific surface areas, indicating their huge potential for capacitive deionization applications.

  18. Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus.

    PubMed

    Baik, Seung Su; Kim, Keun Su; Yi, Yeonjin; Choi, Hyoung Joon

    2015-12-01

    Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications. PMID:26572058

  19. Low-Cost Protective Layer Coatings on Thermal Barrier Coatings via CCVD. Final Report

    SciTech Connect

    Hendrick, Michelle

    2003-09-18

    MicroCoating Technologies, Inc., investigated the use of the Combustion Chemical Vapor Deposition (CCVD) process to deposit oxygen or sintering barrier coatings for thermal barrier coating (TBC) applications. In addition, it looked at the use of its nanopowders by the NanoSpray process for developing smoothing layers on TBCs. Testing and analysis of coated substrates included heat treatments, scanning electron microscopy, x-ray diffraction and profilometry. Coatings on TBC-coated superalloy coupons were tested by an outside collaborator. Results from the investigations indicated that the thin film coatings were not well-suited as barrier layers on the rough bond coat or TBC. Subsequent investigations considered smoothing layers on the TBC, as suggested by the collaborator, using nanopowder-based coatings. Smoothing of substrate surfaces by 50% was observed by profilometry.

  20. 1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber.

    PubMed

    Luo, Zhengqian; Huang, Yizhong; Weng, Jian; Cheng, Huihui; Lin, Zhiqing; Xu, Bin; Cai, Zhiping; Xu, Huiying

    2013-12-01

    Passive Q-switching of an ytterbium-doped fiber (YDF) laser with few-layer topological insulator (TI) is, to the best of our knowledge, experimentally demonstrated for the first time. The few-layer TI: Bi₂Se₃ (2-4 layer thickness) is firstly fabricated by the liquid-phase exfoliation method, and has a low saturable optical intensity of 53 MW/cm² measured by the Z-scan technique. The optical deposition technique is used to induce the few-layer TI in the solution onto a fiber ferrule for successfully constructing the fiber-integrated TI-based saturable absorber (SA). By inserting this SA into the YDF laser cavity, stable Q-switching operation at 1.06 μm is achieved. The Q-switched pulses have the shortest pulse duration of 1.95 μs, the maximum pulse energy of 17.9 nJ and a tunable pulse-repetition-rate from 8.3 to 29.1 kHz. Our results indicate that the TI as a SA is also available at 1 μm waveband, revealing its potential as another broadband SA (like graphene). PMID:24514504

  1. Magnetopause boundary layer. Final report, 19 February 1987-18 May 1990

    SciTech Connect

    Sonnerup, B.U.; Lotko, W.

    1990-06-29

    Theoretical models have been developed to describe the structure of, and dynamical processes in the magnetopause current layer and the adjoining low latitude boundary layer (LLBL), including coupling of the latter to the dayside auroral ionosphere. Also a pilot study has been performed to demonstrate how information about magnetopause and boundary layer structure can be extracted from in-situ measurements of magnetic fields and plasma velocities. (1) Simple two-dimensional dynamic models of the LLBL and other shear flows have been developed and used to study the decay of shear layers, and the breakup of driven unstable shear flows, such as the LLBL, into quasisteady vortex rows similar to those observed in the post-noon auroral-zone ionosphere, or into turbulence. A steady-state viscous LLBL model has also generated in which the magnetic field deformation caused by the currents is included in a self consistent manner. (2) A viscous-resistive model of magnetic field annihilation at the magnetopause has been developed which allows for plasma flow along the reconnection line. (3) The structure of resistive and resistive dispersive MHD intermediate shocks has been determined and their possible role as part of the magnetopause structure assessed. (4) Certain geometric and dynamic properties of the magnetopause/LLBL have been extracted from AMPTE/IRM data with special emphasis on magnetic-field reconnection and flux transfer events.

  2. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells

    NASA Astrophysics Data System (ADS)

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis.NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01601d

  3. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  4. Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication

    NASA Astrophysics Data System (ADS)

    Terakawa, Takeshi; Wang, Dong; Nakashima, Hiroshi

    2006-04-01

    The gettering behaviors of Fe into Si with and without a p+ layer are investigated by deep-level transient spectroscopy. The samples contaminated with Fe in a wide concentration range were annealed at 600 °C to induce gettering. The surface-layer gettering behaviors of Fe for the sample without the p+ layer strongly depend on the Fe contamination level, in which the surface-layer gettering is not effective for the sample with low-level contamination at a concentration of less than 1 × 1013 cm-3 but effective for the sample with middle-level contamination at a concentration of (1--5) × 1013 cm-3. In contrast, the samples with the p+ layer show effective gettering for low- and middle-level contaminations. The gettering mechanisms of Fe in Si without and with the p+ layer are discussed in detail.

  5. A High-Lift Building Block Flow: Turbulent Boundary Layer Relaminarization A Final Report

    NASA Technical Reports Server (NTRS)

    Bourassa, Corey; Thomas, Flint O.; Nelson, Robert C.

    2000-01-01

    Experimental evidence exists which suggests turbulent boundary layer relaminarization may play an important role in the inverse Reynolds number effect in high-lift systems. An experimental investigation of turbulent boundary layer relaminarization has been undertaken at the University of Notre Dame's Hessert Center for Aerospace Research in cooperation with NASA Dryden Flight Research Center. A wind tunnel facility has been constructed at the Hessert Center and relaminarization achieved. Preliminary evidence suggests the current predictive tools available are inadequate at determining the onset of relaminarization. In addition, an in-flight relaminarization experiment for the NASA Dryden FTF-II has been designed to explore relaminarization at Mach and Reynolds numbers more typical of commercial high-lift systems.

  6. Enhanced photocatalytic activity of Ce-doped Zn-Al multi-metal oxide composites derived from layered double hydroxide precursors.

    PubMed

    Zhu, Jianyao; Zhu, Zhiliang; Zhang, Hua; Lu, Hongtao; Qiu, Yanling; Zhu, Linyan; Küppers, Stephan

    2016-11-01

    In this work, a series of novel Zn-Al-Ce multi-metal oxide (Zn-Al-Ce-MMO) photocatalysts with different Ce doping contents were prepared by calcination of Ce-doped Zn-Al layered double hydroxide (Zn-Al-Ce-LDH) precursors at various temperatures in air atmosphere. The synthesized Zn-Al-Ce-MMO materials were characterized by XRD, FTIR, TGA, BET, SEM, TEM, XPS and UV-vis DRS. The photocatalytic activities of the Zn-Al-Ce-MMO materials were evaluated by the photodegradation of rhodamine B (RhB) dye and paracetamol in aqueous solution under simulated solar light irradiation. The result of photodegradation of RhB showed that the Zn-Al-Ce-MMO samples exhibit much higher photocatalytic activity than that of Zn-Al-MMO, and the optimal Ce doping content is 5% of mole ratio (nCe/n(Zn+Al+Ce)). The enhanced photocatalytic activity of the Zn-Al-Ce-MMO was mainly attributed to the increasing in the separation efficiency of electrons and holes. The effect of calcination temperature was also studied. The photocatalytic activity of Zn-Al-Ce-MMO increased with increasing calcination temperature up to 750°C, which can be ascribed to the formation of well-crystallized metal oxides during calcination. Under experimental conditions, 97.8% degradation efficiency of RhB and 98.9% degradation efficiency of paracetamol were achieved after 240min. Active species trapping and EPR experiments suggested that hole (h(+)), superoxide radical (O2(-)) and hydroxyl radical (OH) played important roles during the RhB photocatalytic process. Moreover, the results indicated that the synthesized Zn-Al-Ce-MMO materials had good stability and reusability. PMID:27474815

  7. Linearity optimization of atomic layer deposited ZrO2 metal-insulator-metal capacitors by inserting interfacial Zr-doped chromia layers

    NASA Astrophysics Data System (ADS)

    Lutzer, B.; Simsek, S.; Zimmermann, C.; Stoeger-Pollach, M.; Bethge, O.; Bertagnolli, E.

    2016-03-01

    In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO2 insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V2 is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm2 and a leakage current of less than 1.2 × 10-8 A/cm2 at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing the formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.

  8. Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

    NASA Astrophysics Data System (ADS)

    Gulyaev, D. V.; Zhuravlev, K. S.; Bakarov, A. K.; Toropov, A. I.; Protasov, D. Yu; Gutakovskii, A. K.; Ber, B. Ya; Kazantsev, D. Yu

    2016-03-01

    The peculiarities of a new type of pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructures with the additional acceptor doping of barriers used for the creation of the power SHF pseudomorphic high electron mobility transistor (pHEMT) have been studied. A comparison of the transport characteristic of the new and typical pHEMT heterostructures was carried out. The influence of the doped acceptor impurities in the AlGaAs barriers of the new pHEMT heterostructure on the transport properties was studied. It was shown that the application of the additional p+ doped barrier layers allows the achievement of a double multiplex increase in the two-dimensional electron gas (2DEG) concentration in the InGaAs quantum well with no parasite parallel conductivity in the AlGaAs barrier layers. An estimation of the concentration of the doped donors and acceptors penetrating into the deliberately undoped InGaAs quantum well from the AlGaAs barriers was performed by second ion mass spectrometry and photoluminescence spectrometry methods. Taking into account the electron scattering by the ionized impurity atoms, calculation of the electron mobility in the InGaAs channel showed that some reduction of the electron mobility results from scattering by the ionized Si donor due to an increase in the Si concentration and, therefore, is not caused by the application of additional p+ doped layers in the construction of pHEMT heterostructures.

  9. Final Progress Report: FRACTURE AND SUBCRITICAL DEBONDING IN THIN LAYERED STRUCTURES: EXPERIMENTS AND MULTI-SCALE MODELING

    SciTech Connect

    Reinhold H. Dauskardt

    2005-08-30

    Final technical report detailing unique experimental and multi-scale computational modeling capabilities developed to study fracture and subcritical cracking in thin-film structures. Our program to date at Stanford has studied the mechanisms of fracture and fatigue crack-growth in structural ceramics at high temperature, bulk and thin-film glasses in selected moist environments where we demonstrated the presence of a true mechanical fatigue effect in some glass compositions. We also reported on the effects of complex environments and fatigue loading on subcritical cracking that effects the reliability of MEMS and other micro-devices using novel micro-machined silicon specimens and nanomaterial layers.

  10. Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber.

    PubMed

    Huang, Yizhong; Luo, Zhengqian; Li, Yingyue; Zhong, Min; Xu, Bin; Che, Kaijun; Xu, Huiying; Cai, Zhiping; Peng, Jian; Weng, Jian

    2014-10-20

    We propose and demonstrate a MoS2-based passively Q-switched Er-doped fiber laser with a wide tuning range of 1519.6-1567.7 nm. The few-layer MoS2 nano-platelets are prepared by the liquid-phase exfoliation method, and are then made into polymer-composite film to construct the fiber-compatible MoS2 saturable absorber (SA). It is measured at 1560 nm wavelength, that such MoS2 SA has the modulation depth of ∼ 2% and the saturable optical intensity of ∼ 10 MW/cm(2). By further inserting the filmy MoS2-SA into an Er-doped fiber laser, stable Q-switching operation with a 48.1 nm continuous tuning from S- to C-waveband is successfully achieved. The shortest pulse duration and the maximum pulse energy are 3.3 μs and 160 nJ, respectively. The repetition rate and the pulse duration under different operation conditions have been also characterized. To the best of our knowledge, it is the first demonstration of MoS2 Q-switched, widely-tunable fiber laser. PMID:25401559

  11. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

    PubMed Central

    2013-01-01

    ZnO/Al2O3 multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al2O3 sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10−3 Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl2O4 and ZnO phases during high-temperature annealing ZnO/Al2O3 multilayers. It was found that pure ZnAl2O4 film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al2O3 sublayers, which could only be deposited precisely by utilizing ALD technology. PMID:23537274

  12. Layered-MnO₂ Nanosheet Grown on Nitrogen-Doped Graphene Template as a Composite Cathode for Flexible Solid-State Asymmetric Supercapacitor.

    PubMed

    Liu, Yongchuan; Miao, Xiaofei; Fang, Jianhui; Zhang, Xiangxin; Chen, Sujing; Li, Wei; Feng, Wendou; Chen, Yuanqiang; Wang, Wei; Zhang, Yining

    2016-03-01

    Flexible solid-state supercapacitors provide a promising energy-storage alternative for the rapidly growing flexible and wearable electronic industry. Further improving device energy density and developing a cheap flexible current collector are two major challenges in pushing the technology forward. In this work, we synthesize a nitrogen-doped graphene/MnO2 nanosheet (NGMn) composite by a simple hydrothermal method. Nitrogen-doped graphene acts as a template to induce the growth of layered δ-MnO2 and improves the electronic conductivity of the composite. The NGMn composite exhibits a large specific capacitance of about 305 F g(-1) at a scan rate of 5 mV s(-1). We also create a cheap and highly conductive flexible current collector using Scotch tape. Flexible solid-state asymmetric supercapacitors are fabricated with NGMn cathode, activated carbon anode, and PVA-LiCl gel electrolyte. The device can achieve a high operation voltage of 1.8 V and exhibits a maximum energy density of 3.5 mWh cm(-3) at a power density of 0.019 W cm(-3). Moreover, it retains >90% of its initial capacitance after 1500 cycles. Because of its flexibility, high energy density, and good cycle life, NGMn-based flexible solid state asymmetric supercapacitors have great potential for application in next-generation portable and wearable electronics. PMID:26842681

  13. Development of single and micromorph tandem solar cells in n-i-p configuration with high-pressure RF-PECVD deposited doped and active layers

    NASA Astrophysics Data System (ADS)

    Hou, Guofu; Xue, Junming; Yuan, Yujie; Yang, Xingyun; Liu, Yunzhou; Zhao, Ying; Geng, Xinhua

    2008-03-01

    This paper gives an overview of the scientific challenges and achievements during the development of thin film silicon based single and tandem solar cells with high-pressure RF-PECVD deposited doped and active layers. The effect of i/p interface treatment on the crystalline growth of high conductive p-type layer and the improvement of the Voc and FF of single-junction a-Si:H solar cell was studied. The role of gradient hydrogen dilution technique in the controlling the microstructural evolution of the intrinsic layer and its influence on the solar cell performance were investigated. By combining above methods, an efficiency of 5.7% (Voc=470mV, Jsc=20.2mA/cm2, FF=60%) has been for a single-junction μc-Si:H solar cell. Then, the thicknesses of bottom cells and top cells were varied to achieve good current matching, which yield an efficiency of 9.9% for μc-Si:H/a-Si:H tandem solar cell with Voc of 1221mV, Jsc of 11.61mA/cm2 and fill factor of 70%.

  14. Atomic layer deposition of Al-doped ZnO films using ozone as the oxygen source: A comparison of two methods to deliver aluminum

    SciTech Connect

    Yuan Hai; Luo Bing; Yu Dan; Cheng, An-jen; Campbell, Stephen A.; Gladfelter, Wayne L.

    2012-01-15

    Aluminum-doped ZnO films were prepared by atomic layer deposition at 250 deg. C using diethylzinc (DEZ), trimethylaluminum (TMA), and ozone as the precursors. Two deposition methods were compared to assess their impact on the composition, structural, electrical, and optical properties as a function of Al concentration. The first method controlled the Al concentration by changing the relative number of Al to Zn deposition cycles; a process reported in the literature where water was used as the oxygen source. The second method involved coinjection of the DEZ and TMA during each cycle where the partial pressures of the precursors control the aluminum concentration. Depth profiles of the film composition using Auger electron spectroscopy confirmed a layered microstructure for the films prepared by the first method, whereas the second method led to a homogeneous distribution of the aluminum throughout the ZnO film. Beneath the surface layer the carbon concentrations for all of the films were below the detection limit. Comparison of their electrical and optical properties established that films deposited by coinjection of the precursors were superior.

  15. An ultra-thin, un-doped NiO hole transporting layer of highly efficient (16.4%) organic-inorganic hybrid perovskite solar cells.

    PubMed

    Seo, Seongrok; Park, Ik Jae; Kim, Myungjun; Lee, Seonhee; Bae, Changdeuck; Jung, Hyun Suk; Park, Nam-Gyu; Kim, Jin Young; Shin, Hyunjung

    2016-06-01

    NiO is a wide band gap p-type oxide semiconductor and has potential for applications in solar energy conversion as a hole-transporting layer (HTL). It also has good optical transparency and high chemical stability, and the capability of aligning the band edges to the perovskite (CH3NH3PbI3) layers. Ultra-thin and un-doped NiO films with much less absorption loss were prepared by atomic layer deposition (ALD) with highly precise control over thickness without any pinholes. Thin enough (5-7.5 nm in thickness) NiO films with the thickness of few time the Debye length (LD = 1-2 nm for NiO) show enough conductivities achieved by overlapping space charge regions. The inverted planar perovskite solar cells with NiO films as HTLs exhibited the highest energy conversion efficiency of 16.40% with high open circuit voltage (1.04 V) and fill factor (0.72) with negligible current-voltage hysteresis. PMID:27216291

  16. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  17. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    SciTech Connect

    Fukano, Tatsuo; Motohiro, Tomoyoshi; Ida, Takashi; Hashizume, Hiroo

    2005-04-15

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7 nm in average size show an ionization potential of 5.01 eV, as compared with {approx}4.76 and {approx}4.64 eV in ITO and FTO films, respectively, which decreases as the FTO particle size increases. The ionization potentials are practically invariant against oxidation and reduction treatments, promising a wide application of the films to transparent conducting oxide electrodes in organic electroluminescent devices and light-emitting devices of high efficiencies.

  18. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    NASA Astrophysics Data System (ADS)

    Fukano, Tatsuo; Motohiro, Tomoyoshi; Ida, Takashi; Hashizume, Hiroo

    2005-04-01

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7nm in average size show an ionization potential of 5.01eV, as compared with ˜4.76 and ˜4.64eV in ITO and FTO films, respectively, which decreases as the FTO particle size increases. The ionization potentials are practically invariant against oxidation and reduction treatments, promising a wide application of the films to transparent conducting oxide electrodes in organic electroluminescent devices and light-emitting devices of high efficiencies.

  19. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    NASA Astrophysics Data System (ADS)

    Yuan, Yongbo; Lian, Jiarong; Li, Shuang; Zhou, Xiang

    2008-11-01

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq3) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq3 as the mass ratio of Alq3 to ADN was varied from 1 to 50%. The devices with an optimal Alq3 mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A-1 and 2.7% at a luminance of 1371 cd m-2, which is improved by a factor of 2.2 compared with 4.1 cd A-1 and 1.2% at a luminance of 3267 cd m-2 for conventional devices with the neat Alq3 as the EML.

  20. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    NASA Astrophysics Data System (ADS)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2016-06-01

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (ScxAl1-xN) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S21 measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  1. Photoelectrochemical characteristics of TiO2 nanorod arrays grown on fluorine doped tin oxide substrates by the facile seeding layer assisted hydrothermal method

    NASA Astrophysics Data System (ADS)

    Sui, Mei-rong; Han, Cui-ping; Gu, Xiu-quan; Wang, Yong; Tang, Lu; Tang, Hui

    2016-05-01

    TiO2 nanorod arrays (NRAs) were prepared on fluorine doped tin oxide (FTO) substrates by a facile two-step hydrothermal method. The nanorods were selectively grown on the FTO regions which were covered with TiO2 seeding layer. It took 5 h to obtain the compact arrays with the nanorod length of ~2 μm and diameter of ~50 nm. The photoelectrochemical (PEC) properties of TiO2 NRAs are also investigated. It is demonstrated that the TiO2 NRAs indicate the good photoelectric conversion ability with an efficiency of 0.22% at a full-wavelength irradiation. A photocurrent density of 0.21 mA/cm2 is observed at 0.7 V versus the saturated calomel electrode (SCE). More evidences suggest that the charge transferring resistance is lowered at an irradiation, while the flat-band potential ( V fb) is shifted towards the positive side.

  2. Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide

    NASA Astrophysics Data System (ADS)

    Sadana, D. K.; de Souza, J. P.; Cardone, F.

    1991-03-01

    Carrier concentrations at a level of ≳1×1019 cm-3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar+0.1% O2 ambient at 850-1000 °C for 10-60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850-950 °C. Carrier concentrations in the RTO only samples were in the range of 2-5×1018 cm-3. Kinetic data on the diffusion of Si under RTO and RTO+RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au-Ge-Ni alloy and contact resistances of ≲0.1 Ω mm were obtained.

  3. A final report on hydrothermal testing of sup 99 Tc-doped glass waste form and waste package components

    SciTech Connect

    Schramke, J.A.; Thomas, L.E.; McKinley, S.G.; Simonson, S.A.; Coles, D.G.; Westinghouse Hanford Co., Richland, WA; Pacific Northwest Lab., Richland, WA )

    1984-07-01

    This document reports the results of four experiments using borosilicate glass doped with the key radionuclide {sup 99}Technicium. The experiments were performed in Dickson rocking autoclaves at 200{degree}C, 30MPa pressure for 3 months. Starting materials consisted of the doped glass (+ undoped borosilicate glass){center dot} in GR-3 groundwater. To simulate various possible interactions among waste package components, the glass-groundwater starting materials were run either alone, or combined with RUE-basalt, or cast steel or both. The Dickson autocalve allowed periodic sampling of the fluid, through which concentrations of dissolved species were monitored. In the glass-only experiment, Tc concentration increased until reaching an apparent steady-state concentration of 55 mg/1 after 1000 hours. In runs with basalt, steel or both, this concentration reached steady-state at three or more orders of magnitude below that. 29 refs., 23 figs., 8 tabs.

  4. Improving the conductivity of PEDOT:PSS hole transport layer in polymer solar cells via copper(II) bromide salt doping.

    PubMed

    Zhao, Zhiqiang; Wu, Qiliang; Xia, Fei; Chen, Xiang; Liu, Yawei; Zhang, Wenfeng; Zhu, Jun; Dai, Songyuan; Yang, Shangfeng

    2015-01-28

    Copper(II) bromide (CuBr2) salt has been applied to dope poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL) in polymer solar cells (PSCs), improving dramatically the conductivity of PEDOT:PSS film and consequently the device power conversion efficiency (PCE). Under the optimized doping concentration of CuBr2 of 10 mmol·L(-1), PCE of the CuBr2:PEDOT:PSS HTL-incorporated BHJ-PSC device based on poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5- (4',7'-di-2-thienyl-2',1',3'- benzothiadiazole) (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) (PCDTBT:PC71BM) reaches 7.05%, which is improved by ∼20.7% compared to that of the reference device based on pristine PEDOT:PSS HTL (5.84%) and represents the highest PCE for PCDTBT:PC71BM-based PSC devices without an electron transport layer (ETL) reported so far. The dramatic improvement of the conductivity of PEDOT:PSS film is interpreted by the weakening of the Coulombic attractions between PEDOT and PSS components. The work function of CuBr2:PEDOT:PSS slightly increases compared to that of the undoped PEDOT:PSS as inferred from scanning Kelvin probe microscopy (SKPM) measurements, contributing to the improved PCE due to the increases of the open-current voltage (Voc) and fill factor (FF). PMID:25536017

  5. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

    SciTech Connect

    Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

    2014-01-13

    We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

  6. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    NASA Astrophysics Data System (ADS)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  7. Polarization induced hole doping in graded Al{sub x}Ga{sub 1-x}N (x = 0.7 {approx} 1) layer grown by molecular beam epitaxy

    SciTech Connect

    Li, Shibin; Zhang, Ting; Wu, Jiang; Yang, Yajie; Wang, Zhiming; Wu, Zhiming; Chen, Zhi; Jiang, Yadong

    2013-02-11

    Polarization induced hole doping on the order of {approx}10{sup 18} cm{sup -3} is achieved in linearly graded Al{sub x}Ga{sub 1-x}N (x = 0.7 {approx} 1) layer grown by molecular beam epitaxy. Graded Al{sub x}Ga{sub 1-x}N and conventional Al{sub 0.7}Ga{sub 0.3}N layers grown on AlN are beryllium (Be) doped via epitaxial growth. The hole concentration in graded Al{sub x}Ga{sub 1-x}N:Be (x = 0.7 {approx} 1) layers demonstrates that polarization generates hole charges from Be dopant. The Al{sub 0.7}Ga{sub 0.3}N layer is not conductive owing to the absence of carriers generated from the Be dopant without the inducement of polarization. Polarization doping provides an approach to high efficiency p-type doping in high Al composition AlGaN.

  8. Analysis of the photodiode boundary layer transition indicator. LDRD final report

    SciTech Connect

    Kuntz, D.W.; Wilken, A.C.; Payne, J.L.

    1994-06-01

    The photodiode transition indicator is a device which has been successfully used to determine the onset of boundary layer transition on numerous hypersonic flight vehicles. The exact source of the electromagnetic radiation detected by the photodiode at transition was not understood. In some cases early saturation of the device occurred, and the device failed to detect transition. Analyses have been performed to determine the source of the radiation producing the photodiode signal. The results of these analyses indicate that the most likely source of the radiation is blackbody emission from the heatshield material bordering the quartz window of the device. Good agreement between flight data and calculations based on this radiation source has been obtained. Analyses also indicate that the most probable source of the radiation causing early saturation is blackbody radiation from carbon particles which break away from the nosetip during the ablation process.

  9. Nonlinear interactions in mixing layers and compressible heated round jets. Ph.D. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Jarrah, Yousef Mohd

    1989-01-01

    The nonlinear interactions between a fundamental instability mode and both its harmonics and the changing mean flow are studied using the weakly nonlinear stability theory of Stuart and Watson, and numerical solutions of coupled nonlinear partial differential equations. The first part focuses on incompressible cold (or isothermal; constant temperature throughout) mixing layers, and for these, the first and second Landau constants are calculated as functions of wavenumber and Reynolds number. It is found that the dominant contribution to the Landau constants arises from the mean flow changes and not from the higher harmonics. In order to establish the range of validity of the weakly nonlinear theory, the weakly nonlinear and numerical solutions are compared and the limitation of each is discussed. At small amplitudes and at low-to-moderate Reynolds numbers, the two results compare well in describing the saturation of the fundamental, the distortion of the mean flow, and the initial stages of vorticity roll-up. At larger amplitudes, the interaction between the fundamental, second harmonic, and the mean flow is strongly nonlinear and the numerical solution predicts flow oscillations, whereas the weakly nonlinear theory yields saturation. In the second part, the weakly nonlinear theory is extended to heated (or nonisothermal; mean temperature distribution) subsonic round jets where quadratic and cubic nonlinear interactions are present, and the Landau constants also depend on jet temperature ratio, Mach number and azimuthal mode number. Under exponential growth and nonlinear saturation, it is found that heating and compressibility suppress the growth of instability waves, that the first azimuthal mode is the dominant instability mode, and that the weakly nonlinear solution describes the early stages of the roll-up of an axisymmetric shear layer. The receptivity of a typical jet flow to pulse type input disturbance is also studied by solving the initial value problem

  10. Luminance behavior of lithium-doped ZnO nanowires with p-type conduction characteristics.

    PubMed

    Ko, Won Bae; Lee, Jun Seok; Lee, Sang Hyo; Cha, Seung Nam; Sohn, Jung Inn; Kim, Jong Min; Park, Young Jun; Kim, Hyun Jung; Hong, Jin Pyo

    2013-09-01

    The present study describes the room-temperature cathodeluminescence (CL) and temperature-dependent photoluminescence (PL) properties of p-type lithium (Li)-doped zinc oxide (ZnO) nanowires (NWs) grown by hydrothermal doping and post-annealing processes. A ZnO thin film was used as a seed layer in NW growth. The emission wavelengths and intensities of undoped ZnO NWs and p-type Li-doped ZnO NWs were analyzed for comparison. CL and PL observations of post-annealed p-type Li-doped ZnO NWs clearly exhibited a dominant sharp band-edge emission. Finally, a n-type ZnO thin film/p-type annealed Li-doped ZnO NW homojunction diode was prepared to confirm the p-type conduction of annealed Li-doped ZnO NWs as well as the structural properties measured by transmission electron microscopy. PMID:24205635

  11. Transforming the representation of the boundary layer and low clouds for high-resolution regional climate modeling: Final report

    SciTech Connect

    Huang, Hsin-Yuan; Hall, Alex

    2013-07-24

    the mostly dry mountain-breeze circulations force an additional component that results in semi-diurnal variations near the coast. A series of numerical tests, however, reveal sensitivity of the simulations to the choice of vertical grid, limiting the possibility of solid quantitative statements on the amplitudes and phases of the diurnal and semidiurnal components across the domain. According to our experiments, the Mellor-Yamada-Nakanishi-Niino (MYNN) boundary layer scheme and the WSM6 microphysics scheme is the combination of schemes that performs best. For that combination, mean cloud cover, liquid water path, and cloud depth are fairly wellsimulated, while mean cloud top height remains too low in comparison to observations. Both microphysics and boundary layer schemes contribute to the spread in liquid water path and cloud depth, although the microphysics contribution is slightly more prominent. Boundary layer schemes are the primary contributors to cloud top height, degree of adiabaticity, and cloud cover. Cloud top height is closely related to surface fluxes and boundary layer structure. Thus, our study infers that an appropriate tuning of cloud top height would likely improve the low-cloud representation in the model. Finally, we show that entrainment governs the degree of adiabaticity, while boundary layer decoupling is a control on cloud cover. In the intercomparison study using WRF single-column model experiments, most parameterizations show a poor agreement of the vertical boundary layer structure when compared with large-eddy simulation models. We also implement a new Total-Energy/Mass- Flux boundary layer scheme into the WRF model and evaluate its ability to simulate both stratocumulus and shallow cumulus clouds. Result comparisons against large-eddy simulation show that this advanced parameterization based on the new Eddy-Diffusivity/Mass-Flux approach provides a better performance than other boundary layer parameterizations.

  12. Porous nitrogen-doped carbon microspheres derived from microporous polymeric organic frameworks for high performance electric double-layer capacitors.

    PubMed

    Han, Jinpeng; Xu, Guiyin; Dou, Hui; MacFarlane, Douglas R

    2015-02-01

    This research presents a simple and efficient method to synthesize porous nitrogen-doped carbon microspheres (PNCM) by the carbonization of microporous poly(terephthalaldehyde-pyrrole) organic frameworks (PtpOF). The common KOH activation process is used to tune the porous texture of the PNCM and produce an activated-PNCM (A-PNCM). The PNCM and A-PNCM with specific surface area of 921 and 1303 m(2)  g(-1) , respectively, are demonstrated as promising candidates for EDLCs. At a current density of 0.5 A g(-1) , the specific capacitances of the PNCM and A-PNCM are 248 and 282 F g(-1) , respectively. At the relatively high current density of 20 A g(-1) , the capacitance remaining is 95 and 154 F g(-1) , respectively. Capacity retention of the A-PNCM is more than 92% after 10000 charge/discharge cycles at a current density of 2 A g(-1) . PMID:25469994

  13. Clouds, Aerosol, and Precipitation in the Marine Boundary Layer (CAP-MBL) Final Campaign Report

    SciTech Connect

    Wood, R.

    2016-01-01

    The extensive coverage of low clouds over the subtropical eastern oceans greatly impacts the current climate. In addition, the response of low clouds to changes in atmospheric greenhouse gases and aerosols is a major source of uncertainty, which thwarts accurate prediction of future climate change. Low clouds are poorly simulated in climate models, partly due to inadequate long-term simultaneous observations of their macrophysical and microphysical structure, radiative effects, and associated aerosol distribution in regions where their impact is greatest. The thickness and extent of subtropical low clouds is dependent on tight couplings between surface fluxes of heat and moisture, radiative cooling, boundary layer turbulence, and precipitation (much of which evaporates before reaching the ocean surface and is closely connected to the abundance of cloud condensation nuclei). These couplings have been documented as a result of past field programs and model studies. However, extensive research is still required to achieve a quantitative understanding sufficient for developing parameterizations, which adequately predict aerosol indirect effects and low cloud response to climate perturbations. This is especially true of the interactions between clouds, aerosol, and precipitation. These processes take place in an ever-changing synoptic environment that can confound interpretation of short time period observations.

  14. Distributed feedback laser with optoelectronic tunability in dye-doped cholesteric liquid crystal with coated photoconductive layer

    NASA Astrophysics Data System (ADS)

    Lee, C.-R.; Huang, S.-C.; Lin, S.-H.; Lin, Z.-Y.; Huang, S.-Y.; Mo, T.-S.

    2011-12-01

    This work investigates, for the first time, an optoelectronically tunable distributed feedback laser that is based on a planar DDCLC cell with a coated photoconductive (PC) layer. Experimental results show that the CLC reflection band and the lasing wavelength of the DDCLC can both be tuned optoelectronically by varying the intensity of one irradiating CW green beam or the magnitude of the applied dc voltage. The tunability of the DDCLC laser depends on the controllability of the optoelectronic properties of the PC layer and, therefore, on the voltage dropping on the CLC layer. Therefore, the CLC pitch can be controlled by exploiting the optoelectronically induced electrohydrodynamic effect which causes the spatially periodic deformation of the CLC structure. In addition, the dependences for other critical lasing parameters, e.g., energy threshold, lasing efficiency, and lasing linewidth, on external controlling signals are also measured and discussed in the current study.

  15. Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Choursia, B.; Barvat, Arun; Anand, Kritika; Kushvaha, S. S.; Singh, V. N.; Pal, Prabir; Khanna, Suraj P.

    2016-05-01

    The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.

  16. Local structure of Fe in Fe-doped misfit-layered calcium cobaltite: An X-ray absorption spectroscopy study

    SciTech Connect

    Prasoetsopha, Natkrita; Pinitsoontorn, Supree; Bootchanont, Atipong; Kidkhunthod, Pinit; Srepusharawoot, Pornjuk; Kamwanna, Teerasak; Amornkitbamrung, Vittaya; Kurosaki, Ken; Yamanaka, Shinsuke

    2013-08-15

    Polycrystalline Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} ceramics (x=0, 0.01, 0.03, 0.05) were fabricated using a simple thermal hydro-decomposition method and a spark plasma sintering technique. Thermoelectric property measurements showed that increasing Fe concentration resulted in a decrease in electrical resistivity, thermopower and thermal conductivity, leading to an improvement in the dimensionless figure-of-merit, >35% for x=0.05 at 1073 K. An X-ray absorption spectroscopy technique was used to investigate the local structure of Fe ions in the Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} structure for the first time. By fitting data from the extended X-ray absorption fine structure (EXAFS) spectra and analyzing the X-ray absorption near-edge structure (XANES) spectra incorporated with first principle simulation, it was shown that Fe was substituted for Co in the the Ca{sub 2}CoO{sub 3} (rocksalt, RS) layer rather than in the CoO{sub 2} layer. Variation in the thermoelectric properties as a function of Fe concentration was attributed to charge transfer between the CoO{sub 2} and the RS layers. The origin of the preferential Fe substitution site was investigated considering the ionic radii of Co and Fe and the total energy of the system. - Graphical abstract: The Fe K-edge XANES spectra of: (a) experimental result in comparison to the simulated spectra when Fe atoms were substituted in the RS layer; (b) with magnetic moment; (c) without magnetic moment, and in the CoO{sub 2} layer; (d) with magnetic moment and (e) without magnetic moment. Highlights: • Synthesis, structural studies, and thermoelectric properties of Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ}. • Direct evidence for the local structure of the Fe ions in the Ca{sub 3}Co{sub 4−x}Fe{sub x}O{sub 9+δ} using XAS analysis. • EXAFS and XANES analysis showed that Fe was likely to be situated in the RS layer structure. • Changes in TE property with Fe content was due to charge transfer between

  17. Fluorometric sensing of ultralow As(III) concentrations using Ag doped hollow CdS/ZnS bi-layer nanoparticles.

    PubMed

    Boxi, Siddhartha Sankar; Paria, Santanu

    2015-12-21

    Arsenic poisoning from drinking water has been an important global issue in recent years. Because of the high level toxicity of arsenic to human health, an easy, inexpensive, low level and highly selective detection technique is of great importance to take any early precautions. This study reports the synthesis of Ag doped hollow CdS/ZnS bi-layer (Ag-h-CdS/ZnS) nanoparticles for the easy fluorometric determination of As(iii) ions in the aqueous phase. The hollow bi-layer structures were synthesized by a sacrificial core method using AgBr as the sacrificial core and the core was removed by dissolution in an ammonium hydroxide solution. The synthesized nanoparticles were characterized using different instrumental techniques. A good linear relationship was obtained between fluorescence quenching intensity and As(iii) concentration in the range of 0.75-22.5 μg L(-1) at neutral pH with a limit of detection as low as 0.226 μg L(-1). PMID:26541652

  18. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    PubMed Central

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it. PMID:22222067

  19. Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration

    SciTech Connect

    Kurai, Satoshi Ushijima, Fumitaka; Yamada, Yoichi; Miyake, Hideto; Hiramatsu, Kazumasa

    2014-02-07

    The spatial distribution of luminescence in Si-doped AlGaN epitaxial layers that differ in Al content and Si concentration has been studied by cathodoluminescence (CL) mapping in combination with scanning electron microscopy. The density of surface hillocks increased with decreasing Al content and with increasing Si concentration. The mechanisms giving rise to those hillocks are likely different. The hillocks induced surface roughening, and the compositional fluctuation and local donor-acceptor-pair (DAP) emission at hillock edges in AlGaN epitaxial layers were enhanced irrespective of the origin of the hillocks. The intensity of local DAP emission was related to Si concentration, as well as to hillock density. CL observation revealed that DAP emission areas were present inside the samples and were likely related to dislocations concentrated at hillock edges. Possible candidates for acceptors in the observed DAP emission that are closely related in terms of both Si concentration and hillock edges with large deformations are a V{sub III}-Si{sub III} complex and Si{sub N}, which are unfavorable in ordinary III-nitrides.

  20. Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-01-01

    We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  1. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  2. Laser and optical properties of Yb:YAG ceramics with layered doping distribution: design, characterization and evaluation of different production processes

    NASA Astrophysics Data System (ADS)

    Toci, Guido; Lapucci, Antonio; Ciofini, Marco; Esposito, Laura; Hostaša, Jan; Gizzi, Leonida A.; Labate, Luca; Ferrara, Paolo; Pirri, Angela; Vannini, Matteo

    2016-03-01

    The laser, optical and spectroscopic properties of multilayer Yb:YAG ceramic structures, differently activated, were investigated. The structures were designed by means of Finite Element Modeling, adjusting the doping distributions to reduce peak temperature, surface deformation and thermally induced stresses, depending on the pump and cooling geometry. Two ceramic processes were used, i.e. dry pressing of spray-dried powders (SD) and tape casting (TC), resulting in different defect density and size distribution: TC gives a more uniform transmission, whereas SD results in larger, unevenly scattered defects. The spectroscopic properties were found independent from the production process. The laser performance has been characterized under high intensity pumping in a longitudinally diode pumped laser cavity, comparing the behavior of the different structures in terms of slope efficiency, stability under increasing thermal load, spatial uniformity of laser emission. Slope efficiency values as high as 58% in Quasi-CW pumping conditions and 54% in CW conditions was measured in two-layers structures. The production process and the number of layers influenced the behavior of the samples, in particular regarding the spatial uniformity of the laser emission. Samples made by tape casting have shown overall a better thermal stability with respect to the samples made by spray drying.

  3. LDRD Project 52523 final report :Atomic layer deposition of highly conformal tribological coatings.

    SciTech Connect

    Jungk, John Michael; Dugger, Michael Thomas; George, Steve M.; Prasad, Somuri V.; Grubbs, Robert K.; Moody, Neville Reid; Mayer, Thomas Michael; Scharf, Thomas W.; Goeke, Ronald S.; Gerberich, William W.

    2005-10-01

    Friction and wear are major concerns in the performance and reliability of micromechanical (MEMS) devices. While a variety of lubricant and wear resistant coatings are known which we might consider for application to MEMS devices, the severe geometric constraints of many micromechanical systems (high aspect ratios, shadowed surfaces) make most deposition methods for friction and wear-resistance coatings impossible. In this program we have produced and evaluate highly conformal, tribological coatings, deposited by atomic layer deposition (ALD), for use on surface micromachined (SMM) and LIGA structures. ALD is a chemical vapor deposition process using sequential exposure of reagents and self-limiting surface chemistry, saturating at a maximum of one monolayer per exposure cycle. The self-limiting chemistry results in conformal coating of high aspect ratio structures, with monolayer precision. ALD of a wide variety of materials is possible, but there have been no studies of structural, mechanical, and tribological properties of these films. We have developed processes for depositing thin (<100 nm) conformal coatings of selected hard and lubricious films (Al2O3, ZnO, WS2, W, and W/Al{sub 2}O{sub 3} nanolaminates), and measured their chemical, physical, mechanical and tribological properties. A significant challenge in this program was to develop instrumentation and quantitative test procedures, which did not exist, for friction, wear, film/substrate adhesion, elastic properties, stress, etc., of extremely thin films and nanolaminates. New scanning probe and nanoindentation techniques have been employed along with detailed mechanics-based models to evaluate these properties at small loads characteristic of microsystem operation. We emphasize deposition processes and fundamental properties of ALD materials, however we have also evaluated applications and film performance for model SMM and LIGA devices.

  4. Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors

    SciTech Connect

    Skuras, E. Gavalas, A. Spathara, D. Makris, Th. Anagnostopoulos, D.; Stanley, C. R.; Long, A. R.

    2013-12-04

    Self-consistent calculations for solving the Poisson and Schrödinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.

  5. Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001)

    NASA Astrophysics Data System (ADS)

    Wiemer, C.; Debernardi, A.; Lamperti, A.; Molle, A.; Salicio, O.; Lamagna, L.; Fanciulli, M.

    2011-12-01

    In ZrO2 crystals, the highest dielectric constant (k) is ascribed to the tetragonal phase. By the use of density functional theory and synchrotron radiation x-ray diffraction, we show how the a and c lattice parameters of the tetragonal phase influence the resulting k. Highest k values are obtained at increasing both a and c, while k is reduced for compressive strained cells. The determination of a and c on La-doped ZrO2 and ZrO2 thin films deposited by atomic layer deposition on Ge (001) allowed us to elucidate the influence of La doping and Ge diffusion on the k value.

  6. Scrape-Off-Layer Flow Studies in Tokamaks: Final Report of LDRD Project 09-ERD-025

    SciTech Connect

    Rognlien, T D; Allen, S L; Ellis, R M; Porter, G D; Nam, S K; Weber, T R; Umansky, M V; Howard, J

    2011-11-21

    A summary is given of the work carried out under the LDRD project 09-ERD-025 entitled Scrape-Off-Layer Flow Studies in Tokamaks. This project has lead to implementation of the new prototype Fourier Transform Spectrometer edge plasma flow diagnostic on the DIII-D National Fusion Facility at General Atomics, acquisition of carbon impurity concentration and flow data, and demonstration that the resulting data compare reasonably well with LLNL's edge plasma transport code UEDGE. Details of the work are contained in attached published papers, while the most recent results that are being written-up for publication are summarized in the report. Boundary plasma flows in tokamak fusion devices are key in determining the distribution of fuel and impurity ions, with tritium build-up in the walls an especially critical operational issue. The intrusion of impurity ions to the hot plasma core region can result in serious energy-loss owing to line radiation. However, flow diagnostic capability has been severely limited in fusion-relevant hot edge plasmas where Langmuir-type probes cannot withstand the high heat flux and traditional Doppler spectroscopy has limited resolution and signal strength. Thus, new edge plasma flow diagnostic capabilities need to be developed that can be used in existing and future devices such as ITER. The understanding of such flows requires simulation with 2-dimensional transport codes owing to the geometrical complexity of the edge region in contact with material surfaces and the large number of interaction physical processes including plasma flow along and across the magnetic field, and coupling between impurity and neutral species. The characteristics of edge plasma flows are substantially affected by cross-magnetic-field drifts (ExB/B{sup 2} and BxVB/B{sup 2}), which are known to introduce substantial convergence difficulty for some cases. It is important that these difficulties be overcome so that drifts can be included in transport models, both

  7. Impact of Copper-Doped Titanium Dioxide Interfacial Layers on the Interface-State and Electrical Properties of Si-based MOS Devices

    NASA Astrophysics Data System (ADS)

    Akin, Seçkİn; Sönmezoğlu, Savaş

    2015-09-01

    The current study presents the interface-state and electrical properties of silicon (Si)-based metal-oxide-semiconductor (MOS) devices using copper-doped titanium dioxide (Cu:TiO2) nanoparticles for possible applications as an interfacial layer in scaled high-k/metal gate MOSFET technology. The structural properties of the Cu:TiO2 nanoparticles have been obtained by means of X-ray diffraction (XRD), UV-Vis-NIR spectrometry, atomic force microscopy, and scanning electron microscopy measurements; they were compared with pure TiO2 thin film. With the incorporation of Cu, rutile-dominated anatase/rutile multiphase crystalline was revealed by XRD analysis. To understand the nature of this structure, the electronic parameters controlling the device performance were calculated using current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The ideality factor ( n) was 1.21 for the Al/Cu:TiO2/ p-Si MOS device, while the barrier height ϕ b was 0.75 eV with semi-log I- V characteristics. This is in good agreement with 0.78 eV measured by the Norde model. Possible reasons for the deviation of the ideality factor from unity have been addressed. From the C- V measurements, the values of diffusion potential, barrier height, and carrier concentration were extracted as 0.67, 0.98 eV, and 8.73 × 1013 cm-3, respectively. Our results encourage further work to develop process steps that would allow the Cu-doped TiO2 film/Si interface to play a major role in microelectronic applications.

  8. Atomic layer deposition of highly-doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Roenn, John; Karvonen, Lasse; Pyymäki-Perros, Alexander; Peyghambarian, Nasser; Lipsanen, Harri; Säynätjoki, Antti; Sun, Zhipei

    2016-05-01

    Recently, rare-earth doped waveguide amplifiers (REDWAs) have drawn significant attention as a promising solution to on-chip amplification of light in silicon photonics and integrated optics by virtue of their high excited state lifetime (up to 10 ms) and broad emission spectrum (up to 200 nm) at infrared wavelengths. In the family of rare-earths, at least erbium, holmium, thulium, neodymium and ytterbium have been demonstrated to be good candidates for amplifier operation at moderate concentrations (< 0.1 %). However, efficient amplifier operation in REDWAs is a very challenging task because high concentration of ions (<0.1%) is required in order to produce reasonable amplification over short device length. Inevitably, high concentration of ions leads to energy-transfer between neighboring ions, which results as decreased gain and increased noise in the amplifier system. It has been shown that these energy-transfer mechanisms in highly-doped gain media are inversely proportional to the sixth power of the distance between the ions. Therefore, novel fabrication techniques with the ability to control the distribution of the rare-earth ions within the gain medium are urgently needed in order to fabricate REDWAs with high efficiency and low noise. Here, we show that atomic layer deposition (ALD) is an excellent technique to fabricate highly-doped (<1%) RE:Al2O3 gain materials by using its nanoscale engineering ability to delicately control the incorporation of RE ions during the deposition. In our experiment, we fabricated Er:Al2O3 and Tm:Al2O3 thin films with ALD by varying the concentration of RE ions from 1% to 7%. By measuring the photoluminescence response of the fabricated samples, we demonstrate that it is possible to incorporate up to 5% of either Er- or Tm-ions in Al2O3 host before severe quenching occurs. We believe that this technique can be extended to other RE ions as well. Therefore, our results show the exceptionality of ALD as a deposition technique for

  9. Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers.

    PubMed

    Qi, Yabing; Sajoto, Tissa; Barlow, Stephen; Kim, Eung-Gun; Brédas, Jean-Luc; Marder, Seth R; Kahn, Antoine

    2009-09-01

    Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)(3)), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for organic molecular semiconductors. The electron affinity of the compound, determined via inverse photoemission spectroscopy, is 5.6 eV, which is 0.4 eV larger than that of the commonly used p-dopant F(4)-TCNQ. The LUMO level of Mo(tfd)(3) is calculated to be delocalized over the whole molecule, which is expected to lead to low pinning potential. Efficient p-doping of a standard hole transport material (alpha-NPD) is demonstrated via measurements of Fermi level shifts and enhanced conductivity in alpha-NPD:1% Mo(tfd)(3). Rutherford backscattering measurements show good stability of the three-dimensional Mo(tfd)(3) molecule in the host matrix with respect to diffusion. PMID:19678703

  10. High-efficiency electrophosphorescent white organic light-emitting devices with a double-doped emissive layer

    NASA Astrophysics Data System (ADS)

    Xie, Wenfa; Zhao, Yi; Li, Chuannan; Liu, Shiyong

    2005-03-01

    Efficient white emission with mixing of red emission from bis (1-(phenyl)isoquinoline) iridium (III) acetylanetonate [Ir(piq)2(acac)], green emission from fac (2-phenylpyridine) iridium [Ir(ppy)3], and blue emission from N, N'-bis-(1-naphthyl)-N, N'diphenyl-1,1'biphenyl-4, 4'diamine (NPB) is reported. Ir(piq)2(acac) and Ir(ppy)3 are codoped into a 2,2',2''-(1,3,5-phenylene) tris (1-phenyl-1H-benzimidazole) (TPBI) host. The device emission colour is controlled by varying dopant concentrations. The maximum luminance and power efficiency of the devices with the doping concentrations of 4 wt% Ir(ppy)3 and 2 wt% Ir(piq)2(acac) in TPBI are 33 000 cd m-2 and 10.7 lm W-1, respectively. The CIE coordinates of the device vary from (0.44, 0.44) at 5 V to (0.29, 0.34) at 18 V and are well within the white region.

  11. Effect of nitrogen doping on wetting and photoactive properties of laser processed zinc oxide-graphene oxide nanocomposite layers

    SciTech Connect

    György, E.; Pérez del Pino, A.; Logofatu, C.; Duta, A.; Isac, L.

    2014-07-14

    Zinc oxide-graphene oxide nanocomposite layers were submitted to laser irradiation in air or controlled nitrogen atmosphere using a frequency quadrupled Nd:YAG (λ = 266 nm, τ{sub FWHM} ≅ 3 ns, ν = 10 Hz) laser source. The experiments were performed in air at atmospheric pressure or in nitrogen at a pressure of 2 × 10{sup 4} Pa. The effect of the irradiation conditions, incident laser fluence value, and number of subsequent laser pulses on the surface morphology of the composite material was systematically investigated. The obtained results reveal that nitrogen incorporation improves significantly the wetting and photoactive properties of the laser processed layers. The kinetics of water contact angle variation when the samples are submitted to laser irradiation in nitrogen are faster than that of the samples irradiated in air, the surfaces becoming super-hydrophilic under UV light irradiation.

  12. Crystal Organic Light-Emitting Diodes with Perfectly Oriented Non-Doped Pt-Based Emitting Layer.

    PubMed

    Kim, Kwon-Hyeon; Liao, Jia-Ling; Lee, Si Woo; Sim, Bomi; Moon, Chang-Ki; Lee, Gene-Hsiang; Kim, Hyo Jung; Chi, Yun; Kim, Jang-Joo

    2016-04-01

    Organic light-emitting diodes with external quantum efficiency of 38.8% are realized using a Pt-based thin-film emitting layer with photoluminescence quantum yield of 96% and transition dipole ratio of 93%. The emitting dipole orientation of the thin films fabricated using Pt complexes is investigated and the structural relationship between X-ray structural analysis and the structures in thin films are discussed based on quantum chemical calculations. PMID:26833629

  13. Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

    SciTech Connect

    Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Surya, C.; Hui, Y. Y.; Lau, S. P.; Chen, Z.; Shi, L. J.; Cao, C. B.

    2012-05-01

    We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2-3 {mu}m is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, {alpha}, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of {alpha} of the order of 10{sup 4} cm{sup -1}. Sharp cutoff in the values of {alpha}, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 10{sup 16} cm{sup -3} and 5 x 10{sup 17}cm{sup -3} by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm{sup 2}V{sup -1}s{sup -1} is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

  14. Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1-xN multiple quantum wells grown by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Chichibu, S. F.; Miyake, H.; Ishikawa, Y.; Furusawa, K.; Hiramatsu, K.

    2015-09-01

    Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al0.68Ga0.32N/Al0.77Ga0.23N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H3SiNH2 doping-reactant formation that gives rise to enhanced decomposition of NH3 and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration of NRCs composed of cation vacancies.

  15. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    NASA Astrophysics Data System (ADS)

    Li, Xiao-Jing; Zhao, De-Gang; Jiang, De-Sheng; Chen, Ping; Zhu, Jian-Jun; Liu, Zong-Shun; Le, Ling-Cong; Yang, Jing; He, Xiao-Guang; Zhang, Li-Qun; Liu, Jian-Ping; Zhang, Shu-Ming; Yang, Hui

    2015-09-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p++-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p++-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p++-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10- 4 Ω·cm2 is achieved. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

  16. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    NASA Astrophysics Data System (ADS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-04-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green's functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green's function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  17. Metal-doped graphene layers composed with boron nitride-graphene as an insulator: a nano-capacitor.

    PubMed

    Monajjemi, Majid

    2014-11-01

    A model of a nanoscale dielectric capacitor composed of a few dopants has been investigated in this study. This capacitor includes metallic graphene layers which are separated by an insulating medium containing a few h-BN layers. It has been observed that the elements from group IIIA of the periodic table are more suitable as dopants for hetero-structures of the {metallic graphene/hBN/metallic graphene} capacitors compared to those from groups IA or IIA. In this study, we have specifically focused on the dielectric properties of different graphene/h-BN/graphene including their hetero-structure counterparts, i.e., Boron-graphene/h-BN/Boron-graphene, Al-graphene/h-BN/Al-graphene, Mg-graphene/h-BN/Mg-graphene, and Be-graphene/h-BN/Be-graphene stacks for monolayer form of dielectrics. Moreover, we studied the multi dielectric properties of different (h-BN)n/graphene hetero-structures of Boron-graphene/(h-BN)n/Boron-graphene. PMID:25359456

  18. Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory

    SciTech Connect

    Morozova, N. K.; Galstyan, V. G.; Volkov, A. O.; Mashchenko, V. E.

    2015-09-15

    The study of the optical properties of ZnO(Se) is a continuation of previous studies of ZnS(O), ZnSe(O), and CdS(O) systems in the context of band anticrossing theory. Selenium ions are implanted into high-purity zinc oxide crystals to a concentration of 10{sup 20} cm{sup –3}. The microcathodoluminescence spectra recorded with a scanning electron microscope at a temperature of 100 K provide information from the bulk of the implanted layer. The origin of the orange-red luminescence of ZnO(Se)–Zn layers is clarified. Orangered luminescence is thought to be a result of the formation of a highly mismatched alloy system, in which ZnSe(O) is formed during implantation and radiation annealing. Data suggesting that the green luminescence of pure self-activated ZnO–Zn is the self-activated (SA) emission studied in detail for other II–VI compounds (ZnS(O), ZnSe(O)) and defined by intrinsic defect complexes (A centers) are reported.

  19. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.

  20. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions.

    PubMed

    Dissanayake, D M N M; Ashraf, A; Dwyer, D; Kisslinger, K; Zhang, L; Pang, Y; Efstathiadis, H; Eisaman, M D

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 10(12) e/cm(2) or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene's properties. Here we demonstrate strong (1.33 × 10(13) e/cm(2)), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 10(13) e/cm(2) when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors. PMID:26867673

  1. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    PubMed Central

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-01-01

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013 e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. The ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors. PMID:26867673

  2. Spontaneous and strong multi-layer graphene n-doping on soda-lime glass and its application in graphene-semiconductor junctions

    DOE PAGESBeta

    Dissanayake, D. M. N. M.; Ashraf, A.; Dwyer, D.; Kisslinger, K.; Zhang, L.; Pang, Y.; Efstathiadis, H.; Eisaman, M. D.

    2016-02-12

    Scalable and low-cost doping of graphene could improve technologies in a wide range of fields such as microelectronics, optoelectronics, and energy storage. While achieving strong p-doping is relatively straightforward, non-electrostatic approaches to n-dope graphene, such as chemical doping, have yielded electron densities of 9.5 × 1012 e/cm2 or below. Furthermore, chemical doping is susceptible to degradation and can adversely affect intrinsic graphene’s properties. Here we demonstrate strong (1.33 × 1013 e/cm2), robust, and spontaneous graphene n-doping on a soda-lime-glass substrate via surface-transfer doping from Na without any external chemical, high-temperature, or vacuum processes. Remarkably, the n-doping reaches 2.11 × 1013more » e/cm2 when graphene is transferred onto a p-type copper indium gallium diselenide (CIGS) semiconductor that itself has been deposited onto soda-lime-glass, via surface-transfer doping from Na atoms that diffuse to the CIGS surface. Using this effect, we demonstrate an n-graphene/p-semiconductor Schottky junction with ideality factor of 1.21 and strong photo-response. As a result, the ability to achieve strong and persistent graphene n-doping on low-cost, industry-standard materials paves the way toward an entirely new class of graphene-based devices such as photodetectors, photovoltaics, sensors, batteries, and supercapacitors.« less

  3. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    SciTech Connect

    Malinverni, M. Lamy, J.-M.; Martin, D.; Grandjean, N.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  4. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    SciTech Connect

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the deposited AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.

  5. Performance enhancement of perovskite solar cells with Mg-doped TiO2 compact film as the hole-blocking layer

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Xiong, Liangbin; Lei, Hongwei; Yu, Huaqing; Fang, Guojia

    2015-03-01

    In this letter, we report perovskite solar cells with thin dense Mg-doped TiO2 as hole-blocking layers (HBLs), which outperform cells using TiO2 HBLs in several ways: higher open-circuit voltage (Voc) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO2 as compared to TiO2 such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of Voc. In addition, the Mg-modulated TiO2 with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.

  6. Quantized Hall Effect and Shubnikov-de Haas Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

    NASA Astrophysics Data System (ADS)

    Cao, Helin; Tian, Jifa; Miotkowski, Ireneusz; Shen, Tian; Hu, Jiuning; Qiao, Shan; Chen, Yong P.

    2012-05-01

    Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (Rxy) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 1019cm-3. Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/Rxy is found to scale with the sample thickness, and average ˜e2/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials.

  7. Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriers.

    PubMed

    Cao, Helin; Tian, Jifa; Miotkowski, Ireneusz; Shen, Tian; Hu, Jiuning; Qiao, Shan; Chen, Yong P

    2012-05-25

    Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass oscillations accompanied by quantized Hall resistances (R(xy)) in highly doped n-type Bi2Se3 with bulk carrier concentrations of few 10(19) cm(-3). Measurements under tilted magnetic fields show that the magnetotransport is 2D-like, where only the c-axis component of the magnetic field controls the Landau level formation. The quantized step size in 1/R(xy) is found to scale with the sample thickness, and average ~e(2)/h per quintuple layer. We show that the observed magnetotransport features do not come from the sample surface, but arise from the bulk of the sample acting as many parallel 2D electron systems to give a multilayered quantum Hall effect. In addition to revealing a new electronic property of Bi2Se3, our finding also has important implications for electronic transport studies of topological insulator materials. PMID:23003290

  8. Plasmonic Three-Dimensional Transparent Conductor Based on Al-Doped Zinc Oxide-Coated Nanostructured Glass Using Atomic Layer Deposition

    DOE PAGESBeta

    Malek, Gary A.; Aytug, Tolga; Liu, Qingfeng; Wu, Judy

    2015-04-02

    Transparent nanostructured glass coatings, fabricated on glass substrates, with a unique three-dimensional (3D) architecture were utilized as the foundation for the design of plasmonic 3D transparent conductors. Transformation of the non-conducting 3D structure to a conducting 3D network was accomplished through atomic layer deposition of aluminum-doped zinc oxide (AZO). After AZO growth, gold nanoparticles (AuNPs) were deposited by electronbeam evaporation to enhance light trapping and decrease the overall sheet resistance. Field emission scanning electron microscopy and atomic force microcopy images revealed the highly porous, nanostructured morphology of the AZO coated glass surface along with the in-plane dimensions of the depositedmore » AuNPs. Sheet resistance measurements conducted on the coated samples verified that the electrical properties of the 3D network are comparable to that of the untextured two-dimensional AZO coated glass substrates. In addition, transmittance measurements of the glass samples coated with various AZO thicknesses showed preservation of the highly transparent nature of each sample, while the AuNPs demonstrated enhanced light scattering as well as light-trapping capability.« less

  9. [Luminescent properties of Eu3+ doped layered perovskite structure M2TiO4 (M = Ca, Sr, Ba) red-emitting phosphors].

    PubMed

    Lu, Zhou; Le, Zhang; Xu, Nai-Cen; Wang, Li-Xi; Zhang, Qi-Tu

    2012-10-01

    Series of Eu3+ doped layered perovskite structure M2TiO4: Eu3+ (M = Ca, Sr, Ba) red phosphors were prepared by the high-temperature solid state reaction method. Their phase compositions and photoluminescence properties were investigated by XRD, UV-Vis DRS and fluorescence spectra The results indicated that pure Sr2 TiO4 and Ba2 TiO4 powers could be prepared under 1 100 degrees C for 2 hours, but Ca2 TiO4 powers could not be synthesized even raising the calcination temperature and lengthening the calcination time. Ba2TiO4: Eu3+ phosphor emitted 594 nm (5D0 --> 7F1) and 615 nm (5D0 --> 7F2) orange-red light under the excitation of 395 nm. Sr2TiO4 : Eu3+ phosphor gave a unusual and strong orange-red emission of 578 nm (5D0 --> 7F0) and 626 nm (5 D0 --> 7F2) under the excitation of near ultraviolet or blue light, resulting in the better color purity and higher luminescent intensity. In addition, this phosphor had the highest luminous efficiency when excited by the charge migration excitation at 363 nm and it had the great potential to be a red phosphor for N-UV LED and blue light chip. PMID:23285854

  10. Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer

    SciTech Connect

    Wang, Jing; Qin, Minchao; Tao, Hong; Ke, Weijun; Chen, Zhao; Wan, Jiawei; Qin, Pingli; Lei, Hongwei; Fang, Guojia; Xiong, Liangbin; Yu, Huaqing

    2015-03-23

    In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.

  11. Antenna Effect on the Organic Spacer-Modified Eu-Doped Layered Gadolinium Hydroxide for the Detection of Vanadate Ions over a Wide pH Range.

    PubMed

    Jeong, Heejin; Lee, Byung-Il; Byeon, Song-Ho

    2016-05-01

    The excitation of the adsorbed vanadate group led to the red emission arising from the efficient energy transfer to Eu-doped layered gadolinium hydroxide (LGdH:Eu). This light-harvesting antenna effect allowed LGdH:Eu to detect selectively a vanadate in aqueous solution at different pHs. Because vanadate exists in various forms by extensive oligomerization and protonation reactions in aqueous solution depending on pH, it is important to detect a vanadate regardless of its form over a wide pH range. In particular, spacer molecules with long alkyl chains greatly facilitated access of a vanadate antenna into the interlayer surface of LGdH:Eu. The concomitant increase in adsorption capacity of LGdH:Eu achieved a strong antenna effect of vanadate on the red emission from Eu(3+). When a suspension containing LGdH:Eu nanosheets (1.0 g/L) was used, the vanadate concentration down to 1 × 10(-5) M could even be visually monitored, and the detection limit based on the (5)D0 → (7)F2 emission intensity could reach 4.5 × 10(-8) M. PMID:27077701

  12. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    SciTech Connect

    Hoye, Robert L. Z. E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L. E-mail: jld35@cam.ac.uk; Muñoz-Rojas, David; Nelson, Shelby F.; Illiberi, Andrea; Poodt, Paul

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  13. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect

    Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  14. Growth and characterization of metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures on GaAs using a linearly graded In(AlGa)as buffer layer

    NASA Astrophysics Data System (ADS)

    Wang, S. M.; Karlsson, C.; Rorsman, N.; Bergh, M.; Olsson, E.; Andersson, T. G.

    1997-01-01

    Metamorphic InxGa1-xAs/InAlAs (x >= 0.8) modulation doped heterostructures have been grown on GaAs using a linearly graded In(AlGa)As buffer layer, and their structural and electric properties have been investigated. Surface morphology was found to depend on growth temperature and graded buffer thickness. Low growth temperature resulted in a relatively smooth surface with a minimum root-mean-square roughness value of 4-7 nm. The In(AlGa)As graded buffer effectively prevented dislocations from threading into the top layers. The epilayer grown on the graded buffer was tilted and not fully relaxed. High electron mobility and sheet density were achieved. The highest mobility value was 13740 cm2/Vs with a carrier density of 1.9 · 1012 cm-2 at 300 K. These values are comparable with InP-based InGaAs/InAlAs modulation doped heterostructures.

  15. Intralayer doping effects on the high-energy magnetic correlations in NaFeAs

    NASA Astrophysics Data System (ADS)

    Pelliciari, Jonathan; Huang, Yaobo; Das, Tanmoy; Dantz, Marcus; Bisogni, Valentina; Velasco, Paul Olalde; Strocov, Vladimir N.; Xing, Lingyi; Wang, Xiancheng; Jin, Changqing; Schmitt, Thorsten

    2016-04-01

    We have used resonant inelastic x-ray scattering (RIXS) and dynamical susceptibility calculations to study the magnetic excitations in NaFe1 -xCoxAs (x =0 , 0.03, and 0.08). Despite a relatively low ordered magnetic moment, collective magnetic modes are observed in parent compounds (x =0 ) and persist in optimally (x =0.03 ) and overdoped (x =0.08 ) samples. Their magnetic bandwidths are unaffected by doping within the range investigated. High-energy magnetic excitations in iron pnictides are robust against doping and present irrespectively of the ordered magnetic moment. Nevertheless, Co doping slightly reduces the overall magnetic spectral weight, differently from previous studies on hole-doped BaFe2As2 , where it was observed constant. Finally, we demonstrate that the doping evolution of magnetic modes is different for the dopants being inside or outside the Fe-As layer.

  16. Very low temperature (450 °C) selective epitaxial growth of heavily in situ boron-doped SiGe layers

    NASA Astrophysics Data System (ADS)

    Aubin, J.; Hartmann, J. M.; Veillerot, M.; Essa, Z.; Sermage, B.

    2015-11-01

    We have investigated the feasibility of selectively growing SiGe:B layers at 450 °C, 20 Torr in a 300 mm industrial reduced pressure chemical vapor deposition tool. A reduced H2 carrier gas mass-flow has been used in order to have acceptable growth rates at such a temperature, which is very low indeed. We have first of all studied on blanket Si wafers the in situ boron doping of SiGe with Si2H6, GeH4 and B2H6. A growth rate increase by a factor close to 7 together with a Ge concentration decrease from 53% down to 32% occurred as the diborane mass-flow increased. Very high B+ ion concentrations were obtained in layers that were single crystalline and smooth. Their concentration increased almost linearly with the B2H6 mass-flow, from 1.8 up to 8.3 × 1020 cm-3. The associated resistivity dropped from 0.43 down to 0.26 mΩ cm. We have then tested whether or not selectivity versus SiO2 could be achieved by adding various amounts of HCl to Si2H6 + GeH4 +B2H6. Single crystalline growth rates of intrinsic SiGe(:B) on Si were very similar to poly-crystalline growth rates on SiO2-covered substrates irrespective of the HCl flow. Straightforward selectivity was thus not feasible with a co-flow approach. As a consequence, a 450 °C deposition/etch (DE) process was evaluated. Growth occurred at 20 Torr with the above-mentioned chemistry, while the selective etch of poly-SiGe:B versus c-SiGe:B was conducted at 740 Torr with a medium HCl mass-flow (F(HCl)/F(H2) = 0.2) and a high H2 flow. A 2.2 etch selectivity was achieved while retaining single crystalline if slightly rough SiGe:B layers.

  17. The effect of the dopant nature on the reactivity, interlayer bonding and electronic properties of dual doped bilayer graphene.

    PubMed

    Denis, Pablo A; Iribarne, Federico

    2016-09-21

    Herein, we report on the structural, chemical reactivity and electronic properties of dual-doped bilayer graphene (DDBG). Only one of the layers was doped with a pair of 3p-2p elements. Aluminum was the only dopant which prefers to interact with the undoped layer. The interlayer interaction energies of DDBG are smaller than those determined for bilayer graphene, except for AlN and AlO DDBG. This effect is due to the presence of weak Al-C interlayer bonds. The dopants increase the reactivity of both the doped and undoped layers. Interestingly, we found that hydrogenation is a method that can be used to switch on/off the interlayer bonding, as it controlled the X-C interlayer distance (X = Al, Si, P, S). The magnetic moment of the systems can be adjusted by the position of the 3p dopant. In effect, when X interacts with the doped layer, the magnetic moment is reduced, while it is maintained when X fails to interact. Finally, we found that the doped layer is able to break the symmetry of the undoped sheet and small gaps can be opened in the band structure of the undoped layer. As observed for single doped monolayer graphene, the most effective element for such purposes is P, which opened gaps close to 0.2 eV. For SiN DDBG, the spin filtering properties are enhanced with respect to the monolayered structure. PMID:27545204

  18. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    NASA Astrophysics Data System (ADS)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  19. Super-fast switching of twisted nematic liquid crystals with a single-wall-carbon-nanotube-doped alignment layer

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Lim, Young Jin; Kundu, Sudarshan; Lee, Seung Hee; Lee, Gi-Dong

    2015-03-01

    The application of a single-wall carbon-nanotube (SWCNT) and polyimide (PI) composite thin film on an indium tin-oxide (ITO) glass substrate, working as the command surface in a twisted nematic liquid crystal display (LCD), is described. SWCNTs were chopped and oxidized in a strong acid medium to make them more miscible in a polyimide solution. A film of this newly-developed PISWCNT composite was rubbed to determine the director direction for the LC molecules. The newlyfabricated command surface was examined using a laser beam profiler and atomic force microscopy. Sizes of shortened SWCNTs were characterized by using field-emission scanning electron microscopy (FE-SEM). Finally, small-sized test panels were fabricated from this composite-coated ITO glass, and their electro-optic performances were measured. Although the operating voltage to switch a cell was increased by around 41%, the switching speed was improved remarkably. The rise time of the test cells was found to be improved by around 10.12% and the decay time by around 29.77%. Thus, an overall improvement of around 16.12% in the total switching time was achieved. The change in the surface morphology of the newly-developed composite materials was found to be one of the factors responsible for the faster switching of the device. Detailed discussions are given in this report to explain the faster switching of the newly-developed twisted nematic liquid crystal display (TN-LCD). The device can be useful for practical applications.

  20. Effect of different final irrigating solutions on smear layer removal in apical third of root canal: A scanning electron microscope study

    PubMed Central

    Vemuri, Sayesh; Kolanu, Sreeha Kaluva; Varri, Sujana; Pabbati, Ravi Kumar; Penumaka, Ramesh; Bolla, Nagesh

    2016-01-01

    Aim: The aim of this in vitro study is to compare the smear layer removal efficacy of different irrigating solutions at the apical third of the root canal. Materials and Methods: Forty human single-rooted mandibular premolar teeth were taken and decoronated to standardize the canal length to 14 mm. They were prepared by ProTaper rotary system to an apical preparation of file size F3. Prepared teeth were randomly divided into four groups (n = 10); saline (Group 1; negative control), ethylenediaminetetraacetic acid (Group 2), BioPure MTAD (Group 3), and QMix 2 in 1 (Group 4). After final irrigation with tested irrigants, the teeth were split into two halves longitudinally and observed under a scanning electron microscope (SEM) for the removal of smear layer. The SEM images were then analyzed for the amount of smear layer present using a three score system. Statistical Analysis: Data are analyzed using the Kruskal-Wallis test and Mann-Whitney U-test. Results: Intergroup comparison of groups showed statistically significant difference in the smear layer removal efficacy of irrigants tested. QMix 2 in 1 is most effective in removal of smear layer when compared to other tested irrigants. Conclusion: QMix 2 in 1 is the most effective final irrigating solution for smear layer removal. PMID:26957801

  1. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

    NASA Astrophysics Data System (ADS)

    Cordova, Isvar A.; Peng, Qing; Ferrall, Isa L.; Rieth, Adam J.; Hoertz, Paul G.; Glass, Jeffrey T.

    2015-04-01

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm-2 at 0 V vs. Ag/AgCl under 100 mW cm-2 AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light.TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent

  2. Influence of excess Ba concentration on the dielectric nonlinearity in Mn and V-doped BaTiO3 multi layer ceramic capacitors

    NASA Astrophysics Data System (ADS)

    Yoon, Seok-Hyun; Kim, Sun-Jung; Kim, Sang-Hyuk; Kim, Doo-Young

    2013-12-01

    The effect of excess Ba concentration on the dielectric nonlinearity was investigated in Mn and V-doped BaTiO3 multi layer ceramic capacitors (MLCC) under the same grain size condition, which was described by the Preisach model utilizing the first order reversal curve (FORC) distribution. The high-field dielectric constant and its ac field dependence dramatically changed increasing to a maximum and then decreasing with the increase of Ba concentration. The saturation polarization which scales to the magnitude of spontaneous polarization also showed similar behavior. These results indicate that the dependence of the dielectric constant on the Ba concentration is associated with the variation of both domain wall contribution and the magnitude of the spontaneous polarization, which could be correlated with the same dependence on the Ba concentration of the reversible FORC distribution at zero bias and the irreversible FORC distribution near origin. In the corresponding bulk specimens of the dielectrics of MLCC, almost the same amount of the Ba2TiSi2O8 second phases were detected irrespective of Ba concentration, which shows that the excess Ba incorporate into BaTiO3. Thus, low and high Ba concentration corresponds to Ba-deficient and Ba-rich or Ti-deficient BaTiO3, respectively, which results in a small spontaneous polarization and low domain wall density. The intermediate Ba concentration for the maximum dielectric constant is supposed to be near stoichiometric condition in the ABO3 structure corresponding to large spontaneous polarization and high domain wall density. The excess Ba concentration and its resultant A/B stoichiometry is a crucial factor controlling dielectric properties.

  3. Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Choi, Yong-June; Gong, Su Cheol; Johnson, David C.; Golledge, Stephen; Yeom, Geun Young; Park, Hyung-Ho

    2013-03-01

    The structural, optical, and electrical properties of Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) with a modified precursor pulse sequence were investigated to evaluate the electromagnetic interference shielding effectiveness (EMI-SE). A Zn-Al-O precursor exposure sequence was used in a modified ALD procedure to result in better distribution of Al3+ ions in the ZnO matrix with the aim of reducing the formation of complete nano-laminated structures that may form in the typical alternating ZnO and Al2O3 deposition procedure. The ALD dopant concentration of the ZnO:Al films was varied by adjusting the dopant deposition intervals of the ZnO:Znsbnd Alsbnd O precursor pulse cycle ratios among 24:1, 19:1, 14:1, and 9:1. The lowest obtained resistivity and average transmittance in the visible region (380-780 nm) were 5.876 × 10-4 Ω cm (carrier concentration of 6.02 × 1020 cm-3 and Hall mobility of 17.65 cm2/V s) and 85.93% in the 131 nm thick ZnO:Al(19:1) film, respectively. The average value of the EMI-SE in the range of 30 MHz to 1.5 GHz increased from 1.1 dB for the 121 nm thick undoped ZnO film to 6.5 dB for the 131 nm thick ZnO:Al(19:1) film.

  4. Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films.

    PubMed

    Cordova, Isvar A; Peng, Qing; Ferrall, Isa L; Rieth, Adam J; Hoertz, Paul G; Glass, Jeffrey T

    2015-05-14

    TiO2 is an exemplary semiconductor anode material for photoelectrochemical (PEC) water-splitting electrodes due to its functionality, long-term stability in corrosive environments, nontoxicity, and low cost. In this study, TiO2 photoanodes with enhanced photocurrent density were synthesized by atomic layer deposition (ALD) of TiO2 onto a porous, transparent, and conductive fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing. The simplicity and disordered nature of the nanoFTO nanostructure combined with the ultrathin conformal ALD TiO2 coatings offers advantages including decoupling charge carrier diffusion length from optical penetration depth, increased photon absorption probability through scattering, complimentary photon absorption, and favorable interfaces for charge separation and transfer across the various junctions. We examine the effects of porosity of the nanoFTO scaffold and thickness of the TiO2 coating on PEC performance and achieve an optimal photocurrent of 0.7 mA cm(-2) at 0 V vs. Ag/AgCl under 100 mW cm(-2) AM 1.5 G irradiation in a 1 M KOH aqueous electrolyte. Furthermore, the fundamental mechanisms behind the improvements are characterized via cyclic voltammetry, incident photon-to-current efficiency, transient photocurrent spectroscopy, and electrochemical impedance spectroscopy and are contrasted with those of single crystal rutile TiO2 nanowires. The strategies employed in this work highlight the opportunities inherent to these types of heteronanostructures, where the lessons may be applied to improve the PEC conversion efficiencies of other promising semiconductors, such as hematite (α-Fe2O3) and other materials more sensitive to visible light. PMID:25899449

  5. Structural and magnetotransport properties of the Y doped A-site deficient double layered manganites La1.2-x□0.2YxCa1.6Mn2O7

    NASA Astrophysics Data System (ADS)

    Mahamdioua, N.; Amira, A.; Altintas, S. P.; Varilci, A.; Terzioglu, C.

    2016-08-01

    We present structural, magnetic and electrical properties of the polycrystalline A-site-deficient yttrium doped double layered manganites La1.2-x□0.2YxCa1.6Mn2O7 (x=0.2, 0.3 and 0.4) prepared by a solid state reaction method. The samples crystallize in the tetragonal structure with the space group I4/mmm. Doping with Y decreases the cell parameters and causes a decrease of the metal-insulator transition temperature. The same evolution with doping is also seen for the deduced Curie temperature from susceptibility curves which present a clear paramagnetic-ferromagnetic transition. The significant positive intrinsic magnetoresistance, shown in all samples, reaches 85% at 122 K under 7 T for 0.3 doped sample and can be attributed to the suppression of spin fluctuations via aligning the spins under external magnetic field, while the extrinsic one is attributed to the inter-grain spin-polarized tunneling across the grain boundaries. The simulation of the resistivity curves in the entire temperature range show that the percolation model is suitable to fit our results. The applied magnetic field increases the density of states near the Fermi level, which is in accordance with the observed decrease of resistivity.

  6. Method of making molecularly doped composite polymer material

    DOEpatents

    Affinito, John D [Tucson, AZ; Martin, Peter M [Kennewick, WA; Graff, Gordon L [West Richland, WA; Burrows, Paul E [Kennewick, WA; Gross, Mark E. , Sapochak, Linda S.

    2005-06-21

    A method of making a composite polymer of a molecularly doped polymer. The method includes mixing a liquid polymer precursor with molecular dopant forming a molecularly doped polymer precursor mixture. The molecularly doped polymer precursor mixture is flash evaporated forming a composite vapor. The composite vapor is cryocondensed on a cool substrate forming a composite molecularly doped polymer precursor layer, and the cryocondensed composite molecularly doped polymer precursor layer is cross linked thereby forming a layer of the composite polymer layer of the molecularly doped polymer.

  7. Thin layer of ordered boron-doped TiO2 nanotubes fabricated in a novel type of electrolyte and characterized by remarkably improved photoactivity

    NASA Astrophysics Data System (ADS)

    Siuzdak, Katarzyna; Szkoda, Mariusz; Lisowska-Oleksiak, Anna; Grochowska, Katarzyna; Karczewski, Jakub; Ryl, Jacek

    2015-12-01

    This paper reports a novel method of boron doped titania nanotube arrays preparation by electrochemical anodization in electrolyte containing boron precursor - boron trifluoride diethyl etherate (BF3 C4H10O), simultaneously acting as an anodizing agent. A pure, ordered TiO2 nanotubes array, as a reference sample, was also prepared in solution containing a standard etching compound: ammonium fluoride. The doped and pure titania were characterized by scanning electron microscopy, UV-vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence emission spectroscopy and by means of electrochemical methods. The B-doping decidedly shifts the absorption edge of TiO2 nanotubes towards the visible light region and significantly inhibits the radiative recombination processes. Despite the fact that the doped sample is characterized by 4.6 lower real surface area when compared to pure titania, it leads to the decomposition of methylene blue in 93%, that is over 2.3 times higher than the degradation efficiency exhibited by the undoped material. The formation rate of hydroxyl radicals (rad OH) upon illumination significantly favours boron doped titania as a photocatalytic material. Moreover, the simple doping of TiO2 nanotubes array results in the enhancement of generated photocurrent from 120 μA/cm2 to 350 μA/cm2 registered for undoped and doped electrode, respectively.

  8. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

    PubMed Central

    He, Chenguang; Qin, Zhixin; Xu, Fujun; Hou, Mengjun; Zhang, Shan; Zhang, Lisheng; Wang, Xinqiang; Ge, Weikun; Shen, Bo

    2015-01-01

    Free exciton (FX) and bound exciton (BX) in Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX in undoped sample, and 63.6 meV for the BX in Si-doped (2 × 1018 cm−3) sample. They are attributed to O-bound and Si-bound excitons, respectively. The large binding energies of BX are assumed to originate from the strong quantum confinement in the quantum wells, which also leads to a stronger FX PL peak intensity in comparison with BX at 10 K. Si-doping is found to suppress the FX quenching by reducing threading dislocation density (TDD) in the well layers, leading to a significant improvement of IQE from 33.7% to 45%. PMID:26267249

  9. Catalyst-free synthesis of crumpled boron and nitrogen co-doped graphite layers with tunable bond structure for oxygen reduction reaction.

    PubMed

    Jin, Jutao; Pan, Fuping; Jiang, Luhua; Fu, Xiaogang; Liang, Aiming; Wei, Zhiyang; Zhang, Junyan; Sun, Gongquan

    2014-04-22

    Two-dimensional materials based on ternary system of B, C and N are useful ranging from electric devices to catalysis. The bonding arrangement within these BCN nanosheets largely determines their electronic structure and thus chemical and (or) physical properties, yet it remains a challenge to manipulate their bond structures in a convenient and controlled manner. Recently, we developed a synthetic protocol for the synthesis of crumpled BCN nanosheets with tunable B and N bond structure using urea, boric acid and polyethylene glycol (PEG) as precursors. By carefully selecting the synthesis condition, we can tune the structure of BCN sheets from s-BCN with B and N bond together to h-BCN with B and N homogenously dispersed in BCN sheets. Detailed experiments suggest that the final bond structure of B and N in graphene depends on the preferentially doped N structure in BCN nanosheets. When N substituted the in-plane carbon atom with all its electrons configured into the π electron system of graphene, it facilitates the formation of h-BCN with B and N in separated state. On the contrary, when nitrogen substituted the edge-plane carbon with the nitrogen dopant surrounded with the lone electron pairs, it benefits for the formation of B-N structure. Specially, the compound riched with h-BCN shows excellent ORR performance in alkaline solution due to the synergistic effect between B and N, while s-BCN dominant BCN shows graphite-like activity for ORR, suggesting the intrinsic properties differences of BCN nanosheets with different dopants bond arrangement. PMID:24601550

  10. Effect of sulfur doped TiO2 on photovoltaic properties of dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Seo, Hyunwoong; Nam, Sang-Hun; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu; Boo, Jin-Hyo

    2016-07-01

    In a dye-sensitized solar cell (DSC), a nano-porous semiconductor layer plays an important role in the performance. It determines open-circuit voltage and it affects the dye adsorption capacity and charge transfer, which are closely associated with photocurrent and overall performance. TiO2 is the most proper material for nano-porous layer since the first development of DSCs. This work focuses on the enhancement of TiO2 by doping. Sulfur (S) doping enhances charge transfer and the photoconversion of TiO2. Therefore, the increase in photocurrent and efficiency is expected by S doping. S is doped into TiO2 by hydrolysis method. The amount of S is varied and their photo-responses are verified. The most effective S doped TiO2 is applied to DSCs. Overall performance of DSC is enhanced by the addition of S doped TiO2. Especially, the photocurrent is much increased by the improvement on charge transfer, electron lifetime, and photo-conversion. The photovoltaic properties of DSCs are investigated with various ratios of undoped and S doped TiO2. Finally, a DSC based on undoped and S doped TiO2 ratio of 1:1 has the highest efficiency, better than that of a standard DSC based on undoped TiO2. [Figure not available: see fulltext.

  11. Effectiveness of Four Different Final Irrigation Activation Techniques on Smear Layer Removal in Curved Root Canals : A Scanning Electron Microscopy Study

    PubMed Central

    Ahuja, Puneet; Nandini, Suresh; Ballal, Suma; Velmurugan, Natanasabapathy

    2014-01-01

    Objective: The aim of this study was to assess the efficacy of apical negative pressure (ANP), manual dynamic agitation (MDA), passive ultrasonic irrigation (PUI) and needle irrigation (NI) as final irrigation activation techniques for smear layer removal in curved root canals. Materials and Methods: Mesiobuccal root canals of 80 freshly extracted maxillary first molars with curvatures ranging between 25° and 35° were used. A glide path with #08–15 K files was established before cleaning and shaping with Mtwo rotary instruments (VDW, Munich, Germany) up to size 35/0.04 taper. During instrumentation, 1 ml of 2.5% NaOCl was used at each change of file. Samples were divided into 4 equal groups (n=20) according to the final irrigation activation technique: group 1, apical negative pressure (ANP) (EndoVac); group 2, manual dynamic agitation (MDA); group 3, passive ultrasonic irrigation (PUI); and group 4, needle irrigation (NI). Root canals were split longitudinally and subjected to scanning electron microscopy. The presence of smear layer at coronal, middle and apical levels was evaluated by superimposing 300-μm square grid over the obtained photomicrographs using a four-score scale with X1,000 magnification. Results: Amongst all the groups tested, ANP showed the overall best smear layer removal efficacy (p < 0.05). Removal of smear layer was least effective with the NI technique. Conclusion: ANP (EndoVac system) can be used as the final irrigation activation technique for effective smear layer removal in curved root canals. PMID:24910670

  12. Clarification and mitigation of marked J c decrease at low magnetic fields of BaHfO3-doped SmBaCuO3 thin films deposited on seed layer

    NASA Astrophysics Data System (ADS)

    Watanabe, Yutaro; Ichino, Yusuke; Yoshida, Yutaka; Ichinose, Ataru

    2016-07-01

    In accordance with the results of our previous research, a low-temperature growth (LTG) technique is effective for expanding the lower growth temperature region of c-axis-orientated SmBa2Cu3O y (SmBCO) thin films. However, BaHfO3 (BHO)-doped LTG films show a marked decrease in J c at low magnetic fields compared with conventional PLD films. In this study, we aimed to clarify the mechanism of J c decrease and investigated the thickness dependence of the seed layer on the (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (100) single crystal. The obtained results indicate that J c decreased at low magnetic fields as the thickness of the seed layer increased. It is suggested that flux line kinks produced by flux motion in the seed layer would lead to the depinning of flux lines from BHO nanorods in the upper layer. Thus, we added Y2O3 into the seed layer to trap flux lines in the seed layer. Consequently, we improved J c in the low magnetic field region even in the films prepared by using the LTG technique.

  13. Strain-conserving doping of a pseudomorphic metastable Ge{sub 0.06}Si{sub 0.94} layer on Si(100) by low-dose BF{sub 2}{sup +} implantation

    SciTech Connect

    Im, S.; Eisen, F.; Nicolet, M.; Tanner, M.O.; Wang, K.L.; Theodore, N.D.

    1997-02-01

    A thick (260 nm) pseudomorphic metastable {ital n}-type Ge{sub 0.06}Si{sub 0.94} layer grown by molecular beam epitaxy on an {ital n}-type Si(100) substrate was implanted at room temperature with 70 keV BF{sub 2}{sup +} ions to a dose of 3{times}10{sup 13} cm{sup {minus}2}, so that a p{minus}n junction was formed in the GeSi layers. The samples were subsequently annealed for 10{endash}40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV {sup 4}He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800{degree}C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of {ital p}-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped {ital p}-type GeSi films which is less than unity while the Hall factor of a heavily doped {ital p}-type Si or {ital n}-type GeSi film is close to unity. When annealed at 900{degree}C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s. {copyright} {ital 1997 American Institute of Physics.}

  14. Surface Passivation by Quantum Exclusion Using Multiple Layers

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor)

    2013-01-01

    A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes a plurality M of doped layers, where M is an integer greater than 1. The dopant sheet densities in the M doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. M-1 interleaved layers provided between the M doped layers are not deliberately doped (also referred to as "undoped layers"). Structures with M=2, M=3 and M=4 have been demonstrated and exhibit improved passivation.

  15. Modal cutoff in rare-earth-doped photonic crystal fibers with multi-layer air-holes missing in the core

    NASA Astrophysics Data System (ADS)

    Zhao, Xing-tao; Zheng, Yi; Liu, Xiao-xu; Li, Shu-guang; Han, Ying; Hou, Zhi-yun; Wang, Na; Hou, Lan-tian

    2013-05-01

    The various mode effective indices of the doped photonic crystal fibers (PCFs) are compared, the mode field distributions of the fundamental mode and the second-order mode are analyzed, and the single-mode condition is presented. The mode effective indices of large-core doped PCFs with different core indices and structure parameters are simulated by the finite element method (FEM). The relations of the core index with the fiber structure parameters of pitch, hole-to-pitch ratio and core diameter are obtained for single-mode propagation. In the design and fabrication of the doped PCF, we can adjust the core index and fiber structure parameters to achieve large mode area and single-mode propagation.

  16. Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

    NASA Astrophysics Data System (ADS)

    Tanaka, Takeshi; Kaneda, Naoki; Mishima, Tomoyoshi; Kihara, Yuhei; Aoki, Toshichika; Shiojima, Kenji

    2015-04-01

    We studied the roles of lightly doped carbon in a series of n-GaN Schottky diode epitaxial structures on freestanding GaN substrates, and evaluated the effects of the doping on diode performances. A large variation of compensation ratio was observed for carbon doping at (1-2) × 1016 cm-3. A model was proposed to explain this phenomenon, in which a vulnerable balance between donor-type CGa and deep acceptor CN strongly affected the free-carrier generation. Application of Norde plots and reverse biased leakage current in current-voltage measurements suggested provisional optimization for a free-carrier concentration of 8 × 1015 cm-3 to achieve a tradeoff between breakdown voltage and on-resistance of the n-GaN diodes.

  17. Inverse transfer method using polymers with various functional groups for controllable graphene doping.

    PubMed

    Lee, Seong Kyu; Yang, Jae Won; Kim, Hyun Ho; Jo, Sae Byeok; Kang, Boseok; Bong, Hyojin; Lee, Hyo Chan; Lee, Geunsik; Kim, Kwang S; Cho, Kilwon

    2014-08-26

    The polymer-supported transfer of chemical vapor deposition (CVD)-grown graphene provides large-area and high-quality graphene on a target substrate; however, the polymer and organic solvent residues left by the transfer process hinder the application of CVD-grown graphene in electronic and photonic devices. Here, we describe an inverse transfer method (ITM) that permits the simultaneous transfer and doping of graphene without generating undesirable residues by using polymers with different functional groups. Unlike conventional wet transfer methods, the polymer supporting layer used in the ITM serves as a graphene doping layer placed at the interface between the graphene and the substrate. Polymers bearing functional groups can induce n-doping or p-doping into the graphene depending on the electron-donating or -withdrawing characteristics of functional groups. Theoretical models of dipole layer-induced graphene doping offered insights into the experimentally measured change in the work function and the Dirac point of the graphene. Finally, the electrical properties of pentacene field effect transistors prepared using graphene electrodes could be enhanced by employing the ITM to introduce a polymer layer that tuned the work function of graphene. The versatility of polymer functional groups suggests that the method developed here will provide valuable routes to the development of applications of CVD-grown graphene in organic electronic devices. PMID:25050634

  18. Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiNx and SiNx/P catalytic-doped layers

    NASA Astrophysics Data System (ADS)

    Cham Thi, Trinh; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2016-02-01

    We investigate the role of hydrogen (H) in the improvement in the passivation quality of silicon nitride (SiNx) prepared by catalytic chemical vapor deposition (Cat-CVD) and Cat-CVD SiNx/phosphorus (P) Cat-doped layers on crystalline silicon (c-Si) by annealing. Both structures show promising passivation capabilities for c-Si with extremely low surface recombination velocity (SRV) on n-type c-Si. Defect termination by H is evaluated on the basis of defect density (Nd) determined by electron spin resonance (ESR) spectroscopy and interface state density (Dit) calculated by the Terman method. The two parameters are found to be drastically decreased by annealing after SiNx deposition. The calculated average Dit at midgap (Dit-average) is 2.2 × 1011 eV-1 cm-2 for the SiNx/P Cat-doped c-Si sample with a SRV of 2 cm/s, which is equivalent to 3.1 × 1011 eV-1 cm-2 for the SiNx/c-Si sample with a SRV of 5 cm/s after annealing. The results indicate that H atoms play a critical role in the reduction in Dit for SiNx/c-Si and SiNx/P Cat-doped c-Si, resulting in a drastic reduction in SRV by annealing.

  19. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

    NASA Astrophysics Data System (ADS)

    Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou; Hassan, Zainuriah; Cheong, Kuan Yew

    2016-03-01

    Effects of rapid thermal annealing at different temperatures (700-900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO2) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zrsbnd O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current-time (I-t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO2 signified the potential of the doped ZrO2 as a metal reactive oxide on 4H-SiC substrate.

  20. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

    SciTech Connect

    Mitchell, B.; Dierolf, V.; Lee, D.; Lee, D.; Fujiwara, Y.

    2013-12-09

    Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

  1. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    SciTech Connect

    Araújo, D.; Alegre, M. P.; Piñero, J. C.; Fiori, A.; Bustarret, E.; Jomard, F.

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  2. Doping semiconductor nanocrystals.

    PubMed

    Erwin, Steven C; Zu, Lijun; Haftel, Michael I; Efros, Alexander L; Kennedy, Thomas A; Norris, David J

    2005-07-01

    Doping--the intentional introduction of impurities into a material--is fundamental to controlling the properties of bulk semiconductors. This has stimulated similar efforts to dope semiconductor nanocrystals. Despite some successes, many of these efforts have failed, for reasons that remain unclear. For example, Mn can be incorporated into nanocrystals of CdS and ZnSe (refs 7-9), but not into CdSe (ref. 12)--despite comparable bulk solubilities of near 50 per cent. These difficulties, which have hindered development of new nanocrystalline materials, are often attributed to 'self-purification', an allegedly intrinsic mechanism whereby impurities are expelled. Here we show instead that the underlying mechanism that controls doping is the initial adsorption of impurities on the nanocrystal surface during growth. We find that adsorption--and therefore doping efficiency--is determined by three main factors: surface morphology, nanocrystal shape, and surfactants in the growth solution. Calculated Mn adsorption energies and equilibrium shapes for several nanocrystals lead to specific doping predictions. These are confirmed by measuring how the Mn concentration in ZnSe varies with nanocrystal size and shape. Finally, we use our predictions to incorporate Mn into previously undopable CdSe nanocrystals. This success establishes that earlier difficulties with doping are not intrinsic, and suggests that a variety of doped nanocrystals--for applications from solar cells to spintronics--can be anticipated. PMID:16001066

  3. General design memorandum, Gulfport Harbor, Mississippi. Design Memorandum Number 1. Appendix E. Thin-layer disposal. Final report

    SciTech Connect

    Rees, S.I.

    1989-06-01

    This report presents the results of a one year monitoring program of the impacts associated with the thin-layer disposal of 50,000 cubic yards of new work dredged material in Mississippi Sound. The object of thin-layer disposal is two fold: (1) the placement of dredged material in open water in a layer 12 inches thick or less and (2) reduction of short term impacts to the aquatic ecosystem. Results of this monitoring program indicate that: (1) It is possible to control lift-thickness during open water disposal. (2) Recovery of benthos following a December disposal operation begins as early as 6-weeks post disposal abundances within the disposal area are similar to non-disposal areas. (3) Recruitment to the disposal area, following the December disposal, was mediated by adult migration, followed by spring larval settlement.

  4. Boundary-layer cumulus over heterogeneous landscapes: A subgrid GCM parameterization. Final report, December 1991--November 1995

    SciTech Connect

    Stull, R.B.; Tripoli, G.

    1996-01-08

    The authors developed single-column parameterizations for subgrid boundary-layer cumulus clouds. These give cloud onset time, cloud coverage, and ensemble distributions of cloud-base altitudes, cloud-top altitudes, cloud thickness, and the characteristics of cloudy and clear updrafts. They tested and refined the parameterizations against archived data from Spring and Summer 1994 and 1995 intensive operation periods (IOPs) at the Southern Great Plains (SGP) ARM CART site near Lamont, Oklahoma. The authors also found that: cloud-base altitudes are not uniform over a heterogeneous surface; tops of some cumulus clouds can be below the base-altitudes of other cumulus clouds; there is an overlap region near cloud base where clear and cloudy updrafts exist simultaneously; and the lognormal distribution of cloud sizes scales to the JFD of surface layer air and to the shape of the temperature profile above the boundary layer.

  5. Can the Mott Insulator TiOCl be Metallized by Doping? A First-Principles Study

    NASA Astrophysics Data System (ADS)

    Zhang, Yu-Zhong; Foyevtsova, Kateryna; Jeschke, Harald O.; Schmidt, Martin U.; Valentí, Roser

    2010-04-01

    We investigate the effect of Na intercalation in the layered Mott insulator TiOCl within the framework of density functional theory. We show that the system remains always insulating for all studied Na concentrations, and the evolution of the spectral weight upon Na doping is consistent with recent photoemission experiments. We predict the Na-doped superlattice structures, and show that substitutions of O by F, Cl by S, or Ti by V (or Sc), respectively, fail to metallize the system. We propose a description in terms of a multiorbital ionic Hubbard model in a quasi-two-dimensional lattice and discuss the nature of the insulating state under doping. Finally, a likely route for metallizing TiOCl by doping is proposed.

  6. Sodium doped TiOCl as a realization of a multiband ionic Hubbard model

    NASA Astrophysics Data System (ADS)

    Jeschke, Harald O.; Zhang, Yu-Zhong; Foyevtsova, Kateryna; Schmidt, Martin U.; Valenti, Roser

    2010-03-01

    Using first principles molecular dynamics simulations, we investigate the effect of Na intercalation in the layered Mott insulator TiOCl. In agreement with recent photoemission experiments, we find that the system remains insulating for all studied Na concentrations. Our calculations also explain the evolution of the spectral weight upon Na doping. This is possible due to a prediction of the Na-doped superlattice structures. In the search for alternatives to metallize TiOCl, we also carried out simulations of substitutions of O by F, Cl by S, or Ti by V (or Sc), respectively, but all resulting structures turn out to be insulating. We propose a description in terms of a multiorbital ionic Hubbard model in a quasi-two-dimensional lattice and discuss the nature of the insulating state under doping. Finally, a different route for metallizing TiOCl by doping is proposed.

  7. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers

    SciTech Connect

    A. Ayala

    2004-12-20

    YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) coated conductors are promising materials for large-scale superconductivity applications. One version of a YBCO coated conductor is based on ion beam assisted deposition (IBAD) of magnesium oxide (MgO) onto polycrystalline metal substrates. SrTiO{sub 3} (STO) is often deposited by physical vapor deposition (PVD) methods as a buffer layer between the YBCO and IBAD MgO due to its chemical stability and lattice mismatch of only {approx}1.5% with YBCO. In this work, some aspects of the stability of STO with respect to copper (Cu) and chemical solution deposition of STO on IBAD MgO templates were examined. Solubility limits of Cu in STO were established by processing Cu-doped STO powders by conventional bulk preparation techniques. The maximum solubility of Cu in STO was {approx}1% as determined by transmission electron microscopy (TEM) and Rietveld refinements of x-ray diffraction (XRD) data. XRD analysis, performed in collaboration with NIST, on powder compositions on the STO/SrCuO{sub 2} tie line did not identify any ternary phases. SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layers were prepared by pulsed laser deposition (PLD) and CSD on IBAD MgO flexible metallic textured tapes. TEM analysis of a {approx}100 nm thick SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer layer deposited by PLD showed a smooth Cu-doped STO/MgO interface. A {approx}600 nm thick YBCO film, deposited onto the SrCu{sub 0.10}Ti{sub 0.90}O{sub y} buffer by PLD, exhibited a T{sub c} of 87 K and critical current density (J{sub c}) of {approx}1 MA/cm{sup 2}. STO and Cu-doped STO thin films by CSD were {approx}30 nm thick. The in plane alignment (FWHM) after deposition of the STO improved by {approx}1{sup o} while it degraded by {approx}2{sup o} with the SrCu{sub 0.05}TiO{sub y} buffer. YBCO was deposited by PLD on the STO and SrCu{sub 0.05}TiO{sub y} buffers. The in plane alignment (FWHM) of the YBCO with the STO buffer layer slightly improved while that of the

  8. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation

    NASA Astrophysics Data System (ADS)

    Murakumo, Keisuke; Yamaoka, Yuya; Kumagai, Naoto; Kitada, Takahiro; Isu, Toshiro

    2016-04-01

    We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ∼1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.

  9. Electronic and Thermoelectric Properties of Layered Sn- and Pb-Doped Ge2Sb2Te5 Alloys Using First Principle Calculations

    NASA Astrophysics Data System (ADS)

    Singh, Janpreet; Singh, Gurinder; Kaura, Aman; Tripathi, S. K.

    2016-06-01

    A computational study on stable hexagonal phase of undoped, and Sn- and Pb-doped Ge2Sb2Te5 (GST) phase change materials has been carried out. The electronic structure, lattice dynamics and thermoelectric properties of doped GST have been extensively investigated using ab initio methods with virtual crystal approximation. The hexagonal symmetry of the GST is maintained with the addition of Sn and Pb dopants. The lattice parameters and atomic volume of the Sn-doped GST structure is larger than that of the undoped GST. Electronic band structure calculations show that there is an increase in band gap with the increase in the concentration of Sn (≤4.4 at.%). However, with the addition of a very small amount of Pb, there is a continuous decrease in lattice parameters and band gap values. The calculated energy band structure is then used in combination with the Boltzmann transport equation to calculate the thermoelectric parameters of GST and Sn- and Pb-doped materials. Seebeck coefficient ( S), electronic thermal conductivity ( κ e) and the thermoelectric figure-of-merit ( ZT) have been calculated with the help of BoltzTraP code. It was found that the thermoelectric properties of GST are enhanced with the addition of Sn.

  10. Visible light absorbance enhanced by nitrogen embedded in the surface layer of Mn-doped sodium niobate crystals, detected by ultra violet - visible spectroscopy, x-ray photoelectron spectroscopy, and electric conductivity tests

    NASA Astrophysics Data System (ADS)

    Molak, A.; Pilch, M.

    2016-05-01

    Sodium niobate crystals doped with manganese ions, Na(NbMn)O3, were annealed in a nitrogen N2 flow at 600, 670, and 930 K. It was verified that simultaneous doping with Mn ions and annealing in nitrogen enhanced the photocatalytic features of sodium niobate. The transmission in the ultraviolet-visible range was measured at room temperature. The absorbance edge is in the range from 3.4 to 2.3 eV. The optical band gap Egap = 1.2-1.3 eV was evaluated using the Tauc relation. Crystals annealed at 670 K and 930 K exhibited an additional shift of the absorption edge of ˜20-40 nm toward longer wavelengths. The optical energy gap narrowed as a result of the superimposed effect of Mn and N co-doping. The x-ray photoelectron spectroscopy test showed that N ions incorporated into the surface layer. The valence band consisted of O 2p states hybridized with Nb 4d, Mn 3d, and N 2s states. The disorder detected in the surroundings of Nb and O ions decreased due to annealing. The binding energy of oxygen ions situated within the surface layer was EB ≈ 531 eV. The other contributions were assigned to molecular contamination. The contribution centered at 535.5 eV vanished after annealing at 600 K and 670 K. The contribution centered at 534 eV vanished after annealing at 930 K. The N2 annealing partly removed carbonates from the surfaces of the samples. In the 480-950 K range, the electric conductivity activation energy, Ea = 0.7-1.2 eV, was comparable with the optical Egap. The electric permittivity showed dispersion in the 0.1-800 kHz range that corresponds to the occurrence of defects.

  11. Reversible magnetization measurements of the anisotropic superconducting parameters of the infinite-layer electron-doped compound Sr 0.90La 0.10CuO 2 apparent anisotropy crossover

    NASA Astrophysics Data System (ADS)

    Cobb, J. L.; Markert, J. T.

    1994-06-01

    We report the results and analysis of DC magnetization studies of grain-aligned powders of the infinite-layer electron-doped compounds Sr 0.90La 0.10CuO 2. Magnetization data in the reversible temperature regime were analyzed to obtain the anisotropic superconducting parameters for this system. Three samples of Sr 0.90La 0.10CuO 2 were studied, presumably with very slightly diffrent La or O concentrations. Typically, the extracted values of the coherence lengths (ξ ∥=46 Å, ξ ⊥=30 Å), the penetration depths (λ ∥=290 nm, λ ⊥=450 nm), the mass anisotrophy ( ( {m ⊥}/{m ∥}) {1}/{2}≈1.5 ), and the lower and upper critical fields are appreciably less anisotropic than reported values for the electron-doped T‧ phase materials, possibly because the infinite-layer compound has a significantly shorter interplanar spacing (3.4 Å versus 6.0 Å). One notable sample, moreover, exhibits an inverse anisotropy (( ( {m ⊥}/{m ∥}) {1}/{2}≈0.6 ), further suggesting that this system behaves much like a three-dimensional metal.

  12. Low Reynold's number boundary layers in a disturbed environment. Ph.D. Thesis - August, 1985 - Final Report

    NASA Technical Reports Server (NTRS)

    Paik, D. K.; Reshotko, E.

    1986-01-01

    Studies of flat plate boundary layer development were made in a low speed wind tunnel at turbulence levels from 2%to 7%. Only transitional and turbulent flows were observed in the range 280 Re sub theta 700. The mean turbulent velocity profiles display law-of-the-wall behavior but have negligible wake component. The u' disturbance profiles compare well with those of other experiments, the peak value of u'/u sub tau being about 2.5. The effect of free-stream turbulence level on turbulent skin friction can be nicely correlated with those of other investigations on a plot of u sub e/u sub tau versus Re sub theta. A discussion on the u' spectra for the transitional boundary-layers is presented.

  13. Mixing and non-equilibrium chemical reaction in a compressible mixing layer. M.S. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Steinberger, Craig J.

    1991-01-01

    The effects of compressibility, chemical reaction exothermicity, and non-equilibrium chemical modeling in a reacting plane mixing layer were investigated by means of two dimensional direct numerical simulations. The chemical reaction was irreversible and second order of the type A + B yields Products + Heat. The general governing fluid equations of a compressible reacting flow field were solved by means of high order finite difference methods. Physical effects were then determined by examining the response of the mixing layer to variation of the relevant non-dimensionalized parameters. The simulations show that increased compressibility generally results in a suppressed mixing, and consequently a reduced chemical reaction conversion rate. Reaction heat release was found to enhance mixing at the initial stages of the layer growth, but had a stabilizing effect at later times. The increased stability manifested itself in the suppression or delay of the formation of large coherent structures within the flow. Calculations were performed for a constant rate chemical kinetics model and an Arrhenius type kinetic prototype. The choice of the model was shown to have an effect on the development of the flow. The Arrhenius model caused a greater temperature increase due to reaction than the constant kinetic model. This had the same effect as increasing the exothermicity of the reaction. Localized flame quenching was also observed when the Zeldovich number was relatively large.

  14. Growth condition dependence of Mg-doped GaN film grown by horizontal atmospheric MOCVD system with three layered laminar flow gas injection

    NASA Astrophysics Data System (ADS)

    Tokunaga, H.; Waki, I.; Yamaguchi, A.; Akutsu, N.; Matsumoto, K.

    1998-06-01

    We developed a novel atmospheric pressure horizontal MOCVD system (SR2000) for the growth of III-nitride film. This system was designed for high-speed gas flow in order to suppress thermal convection and undesirable reactant gas reaction. We have grown Mg-doped GaN films using SR2000. We studied the bis-cyclopentadienyl magnesium (Cp 2Mg) flow rate dependence and growth temperature ( Tg) dependence of Mg-doped GaN. As a result, we have obtained p-type GaN film with hole carrier density of 8×10 17 cm -3 with a mobility of 7.5 cm 2/(V s) at the growth condition with Cp 2Mg flow rate of 0.1 μmol/min at Tg of 1025°C.

  15. Scaling and modeling of three-dimensional, end-wall, turbulent boundary layers. Ph.D. Thesis - Final Report

    NASA Technical Reports Server (NTRS)

    Goldberg, U. C.; Reshotko, E.

    1984-01-01

    The method of matched asymptotic expansion was employed to identify the various subregions in three dimensional, turbomachinery end wall turbulent boundary layers, and to determine the proper scaling of these regions. The two parts of the b.l. investigated are the 3D pressure driven part over the endwall, and the 3D part located at the blade/end wall juncture. Models are proposed for the 3d law of the wall and law of the wake. These models and the data of van den Berg and Elsenaar and of Mueller are compared and show good agreement between models and experiments.

  16. Efficient conversion from UV light to near-IR emission in Yb{sup 3+}-doped triple-layered perovskite CaLaNb{sub 3}O{sub 10}

    SciTech Connect

    Lu, Yuting; Li, Yuze; Qin, Lin; Huang, Yanlin; Qin, Chuanxiang; Tsuboi, Taiju; Huang, Wei

    2015-04-15

    Graphical abstract: CaRNb{sub 3}O{sub 10} is a self-activated oxide due to charge transfer transition in octahedral NbO{sub 6} groups. CaLaNb{sub 3}O{sub 10}:Yb{sup 3+} presents intense IR emission due to the cooperative energy transfer from host (NbO{sub 6}) to Yb{sup 3+} is responsible. It could be expected to be potentially applicable for enhancing photovoltaic conversion efficiency of Si-based solar cells. - Abstract: Yb{sup 3+}-doped triple-layered perovskite CaLaNb{sub 3}O{sub 10} micro-particles were synthesized via the solid-state reaction method. The crystal structure and morphology of the polycrystalline samples were investigated by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM) measurements, respectively. The reflectance spectra, photoluminescence (PL) excitation and emission spectra, the decay curves, and the absolute quantum efficiency (QE) of the near-infrared (NIR) emission (910–1100 nm) were measured. Under excitation of UV light, Yb{sup 3+}-doped perovskite shows an intense NIR emission attributed to the {sup 2}F{sub 5/2} → {sup 2}F{sub 7/2} transitions of Yb{sup 3+} ions, which could match maximum spectral response of a Si-based solar cell. This is beneficial for its possible application in an enhancement of the photovoltaic conversion efficiency of solar energy utilization. The efficient energy transfer in Yb{sup 3+}-doped CaLaNb{sub 3}O{sub 10} from NbO{sub 6} groups into Yb{sup 3+} ions was confirmed by the spectra and fluorescent decay measurements. Cooperative energy transfer (CET) was supposed to be the NIR emission mechanism.

  17. Finalizing the CCSDS Space-Data Link Layer Security Protocol: Setup and Execution of the Interoperability Testing

    NASA Technical Reports Server (NTRS)

    Fischer, Daniel; Aguilar-Sanchez, Ignacio; Saba, Bruno; Moury, Gilles; Biggerstaff, Craig; Bailey, Brandon; Weiss, Howard; Pilgram, Martin; Richter, Dorothea

    2015-01-01

    The protection of data transmitted over the space-link is an issue of growing importance also for civilian space missions. Through the Consultative Committee for Space Data Systems (CCSDS), space agencies have reacted to this need by specifying the Space Data-Link Layer Security (SDLS) protocol which provides confidentiality and integrity services for the CCSDS Telemetry (TM), Telecommand (TC) and Advanced Orbiting Services (AOS) space data-link protocols. This paper describes the approach of the CCSDS SDLS working group to specify and execute the necessary interoperability tests. It first details the individual SDLS implementations that have been produced by ESA, NASA, and CNES and then the overall architecture that allows the interoperability tests between them. The paper reports on the results of the interoperability tests and identifies relevant aspects for the evolution of the test environment.

  18. Airplane dopes and doping

    NASA Technical Reports Server (NTRS)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  19. Biomass-Derived Nitrogen-Doped Carbon Nanofiber Network: A Facile Template for Decoration of Ultrathin Nickel-Cobalt Layered Double Hydroxide Nanosheets as High-Performance Asymmetric Supercapacitor Electrode.

    PubMed

    Lai, Feili; Miao, Yue-E; Zuo, Lizeng; Lu, Hengyi; Huang, Yunpeng; Liu, Tianxi

    2016-06-01

    The development of biomass-based energy storage devices is an emerging trend to reduce the ever-increasing consumption of non-renewable resources. Here, nitrogen-doped carbonized bacterial cellulose (CBC-N) nanofibers are obtained by one-step carbonization of polyaniline coated bacterial cellulose (BC) nanofibers, which not only display excellent capacitive performance as the supercapacitor electrode, but also act as 3D bio-template for further deposition of ultrathin nickel-cobalt layered double hydroxide (Ni-Co LDH) nanosheets. The as-obtained CBC-N@LDH composite electrodes exhibit significantly enhanced specific capacitance (1949.5 F g(-1) at a discharge current density of 1 A g(-1) , based on active materials), high capacitance retention of 54.7% even at a high discharge current density of 10 A g(-1) and excellent cycling stability of 74.4% retention after 5000 cycles. Furthermore, asymmetric supercapacitors (ASCs) are constructed using CBC-N@LDH composites as positive electrode materials and CBC-N nanofibers as negative electrode materials. By virtue of the intrinsic pseudocapacitive characteristics of CBC-N@LDH composites and 3D nitrogen-doped carbon nanofiber networks, the developed ASC exhibits high energy density of 36.3 Wh kg(-1) at the power density of 800.2 W kg(-1) . Therefore, this work presents a novel protocol for the large-scale production of biomass-derived high-performance electrode materials in practical supercapacitor applications. PMID:27135301

  20. Enhanced performance of polymer solar cells using PEDOT:PSS doped with Fe3O4 magnetic nanoparticles aligned by an external magnetostatic field as an anode buffer layer.

    PubMed

    Wang, Kai; Yi, Chao; Hu, Xiaowen; Liu, Chang; Sun, Yan; Hou, Jianhui; Li, Yongfang; Zheng, Jie; Chuang, Steven; Karim, Alamgir; Gong, Xiong

    2014-08-13

    Low efficiency and poor stability are two major obstacles limiting the manufacturing of renewable and cost-effective polymer solar cell (PSCs). To address these problems, solution-processed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) doped with Fe3O4 magnetic nanoparticles ((PEDOT:PSS):Fe3O4), and above (PEDOT:PSS):Fe3O4 thin film aligned by an external magnetostatic field ([(PEDOT:PSS):Fe3O4] W/H) were used as the anode buffer layer for PSCs, respectively. As compared with PSCs with PEDOT:PSS as an anode buffer layer, 38.5% enhanced efficiency and twice improved stability are observed from PSCs incorporated with [(PEDOT:PSS):Fe3O4] W/H anode buffer layer. It was found that enhanced efficiency and improved stability resulted from a combination of reduced acidity of PEDOT:PSS and enhanced electrical conductivity that originated from generated counterions and the paramagnetism of Fe3O4 magnetic nanoparticles by an external magnetostatic field. PMID:24980462

  1. Influence of Fe doping and FeNi-layer thickness on the magnetic properties and GMI effect of electrodeposited Ni100-xFex/Cu (x = 0 95) wires

    NASA Astrophysics Data System (ADS)

    Thanh Tung, Mai; Van Dung, Nguyen; Hoang Nghi, Nguyen; Phan, Manh-Huong; Peng, Hua-Xin

    2008-05-01

    A systematic study has been performed by the influence of Fe doping and FeNi-layer thickness on the giant magnetoimpedance (GMI) effect of electrodeposited Ni100-xFex/Cu (x = 0-95) composite wires. Results obtained show that there is a correlation between the structure, soft magnetic properties and the GMI effect. Among the compositions investigated, the largest MI ratio is achieved for Ni44Fe56/Cu as a result of it having the softest magnetic property (i.e. the lowest coercivity), which arises from the smallest nanograin size. As the NiFe-layer thickness (t) increases from 1 to 27.4 µm, the GMI ratio initially increases, reaches a maximum of 110% at t = 27.4 µm and then decreases for t > 27.4 µm. Interestingly, GMI curves show a single-peak feature for wires with t < 20 µm, but a double-peak one for wires with t >= 20 µm. This indicates that there is a formation of a circular domain structure with a well-defined circumferential anisotropy in the NiFe magnetic layer of the wires with t >= 20 µm. This in turn results in a great improvement in the GMI effect of these wires.

  2. Undoped TiO{sub 2} and nitrogen-doped TiO{sub 2} thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

    SciTech Connect

    Tian, Liang Soum-Glaude, Adurey; Volpi, Fabien; Salvo, Luc; Berthomé, Grégory; Coindeau, Stéphane; Mantoux, Arnaud; Boichot, Raphaël; Lay, Sabine; Brizé, Virginie; Blanquet, Elisabeth; Giusti, Gaël; Bellet, Daniel

    2015-01-15

    Undoped and nitrogen doped TiO{sub 2} thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH{sub 3} and/or N{sub 2}O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO{sub 2} thin films were deposited on the 3D metallic foam template.

  3. First-principles computational studies of alkali-doped C60 fullerides. Final technical report, 1 Jan 91-1 Jan 92

    SciTech Connect

    Erwin, S.C.

    1992-04-06

    Researchers at AT and T Bell Laboratories reported the discovery of superconductivity at 18 K in a potassium-doped fullerene solid, KxC60. This marked a major turning point in the young history of the C60 molecule 'buckminsterfullerene': from a hypothetical molecular (1985), to small-scale (mg) production of crystalline powders (1988), to large-scale synthesis (1990), to a material with the highest transition temperature of any molecular superconductor. This history represents only one of many research lines. Concurrently with the work at AT and T on partial doping, researchers at the Laboratory for Research on the Structure of Matter at the University of Pennsylvania were doping solid C60 to saturation with potassium. The resulting pure phase, K6C60, was characterized by x-ray diffraction in April 1991: the lattice was body-centered cubic, with the C60 molecules essentially undistorted, orientationally ordered, and each surrounded by a cage of 24 K atoms. Nothing was known about the electronic structure at this early stage.

  4. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  5. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE

    NASA Astrophysics Data System (ADS)

    Prakash, Nisha; Anand, Kritika; Barvat, Arun; Pal, Prabir; Singh, Dilip K.; Jewariya, Mukesh; Ragam, Srinivasa; Adhikari, Sonachand; Maurya, Kamlesh K.; Khanna, Suraj P.

    2016-04-01

    In this work, unintentionally doped GaN samples were prepared on GaN template by radio frequency (RF)-plasma MBE technique using two different RF-plasma powers. Photoluminescence (PL), steady state photoconductivity (PC) and ultrafast optical pump-probe spectroscopy measurements have been carried out to characterize the samples. The effect of RF-plasma power towards unintentional doping and giving rise to yellow luminescence (YL) is discussed. Our PC measurements show relatively faster decay for sample grown with higher RF-plasma power. In addition, the ultrafast optical pump-probe spectroscopy results show the presence of various defect levels with different relaxation times. A faster ultrafast relaxation time from the conduction band to the closest defect level and conduction band to the next defect level was observed for the sample grown with higher plasma power. A comparatively low defect density and faster carrier relaxation observed in higher RF-plasma power grown samples is caused by lower impurities and gallium vacancies. The results imply that RF-plasma power is very important parameter for the growth of epitaxial GaN films and undesirable impurities and gallium vacancies might get incorporated in the epitaxial GaN films.

  6. High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

    NASA Astrophysics Data System (ADS)

    Takeuchi, Wakana; Taoka, Noriyuki; Kurosawa, Masashi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2015-07-01

    We investigated the effects of incorporation of 0%-2% tin (Sn) into amorphous germanium (Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn caused the polycrystallization temperature of Ge to lower from 450 to 430 °C, while a polycrystalline Ge1-xSnx layer with high crystallinity compared to that of polycrystalline Ge was formed by incorporation of 2% Sn. A polycrystalline Ge1-xSnx layer with a low Sn content of 2% annealed at 450 °C exhibited a Hall hole mobility as high as 130 cm2/V s at room temperature even though it possessed a small grain size of 20-30 nm. The Hall hole mobility of a poly-Ge1-xSnx layer with an Sn content of 2% was four times higher than that of a polycrystalline Ge layer and comparable to that of single-crystalline silicon.

  7. Opto-electronic properties of P-doped nc-Si-QD/a-SiC:H thin films as foundation layer for all-Si solar cells in superstrate configuration

    NASA Astrophysics Data System (ADS)

    Kar, Debjit; Das, Debajyoti

    2016-07-01

    With the advent of nc-Si solar cells having improved stability, the efficient growth of nc-Si i-layer of the top cell of an efficient all-Si solar cell in the superstrate configuration prefers nc-Si n-layer as its substrate. Accordingly, a wide band gap and high conducting nc-Si alloy material is a basic requirement at the n-layer. Present investigation deals with the development of phosphorous doped n-type nanocrystalline silicon quantum dots embedded in hydrogenated amorphous silicon carbide (nc-Si-QD/a-SiC:H) hetero-structure films, wherein the optical band gap can be widened by the presence of Si-C bonds in the amorphous matrix and the embedded high density tiny nc-Si-QDs could provide high electrical conductivity, particularly in P-doped condition. The nc-Si-QDs simultaneously facilitate further widening of the optical band gap by virtue of the associated quantum confinement effect. A complete investigation has been made on the electrical transport phenomena involving charge transfer by tunneling and thermionic emission prevailing in n-type nc-Si-QD/a-SiC:H thin films. Their correlation with different phases of the specific heterostructure has been carried out for detailed understanding of the material, in order to improve its device applicability. The n-type nc-Si-QD/a-SiC:H films exhibit a thermally activated electrical transport above room temperature and multi-phonon hopping (MPH) below room temperature, involving defects in the amorphous phase and the grain-boundary region. The n-type nc-Si-QD/a-SiC:H films grown at ˜300 °C, demonstrating wide optical gap ˜1.86-1.96 eV and corresponding high electrical conductivity ˜4.5 × 10-1-1.4 × 10-2 S cm-1, deserve to be an effective foundation layer for the top nc-Si sub-cell of all-Si solar cells in n-i-p structure with superstrate configuration.

  8. Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing

    NASA Astrophysics Data System (ADS)

    Okuda, Takafumi; Miyazawa, Tetsuya; Tsuchida, Hidekazu; Kimoto, Tsunenobu; Suda, Jun

    2014-08-01

    We investigated the enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epilayers (NA ≃ 2 × 1014 cm-3) by postgrowth processing. A carrier lifetime of 2.8 µs in an as-grown epilayer is increased to 5.1 µs by carbon vacancy elimination, i.e., thermal oxidation at 1400 °C for 48 h. It reaches 10 µs by subsequent hydrogen annealing at 1000 °C for 10 min. The carrier lifetime in the as-grown epilayer is also increased to 4.0 µs by only hydrogen annealing. These results suggest that, in addition to carbon vacancy, there is another lifetime killer in p-type SiC, which cannot be eliminated by thermal oxidation but can be passivated by hydrogen annealing.

  9. Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

    NASA Astrophysics Data System (ADS)

    Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

    2013-12-01

    Carrier lifetimes in a highly Al-doped p-type epilayer (NA = 1×1018 cm-3) are investigated by differential microwave photoconductance decay (µ-PCD) measurements. A carrier lifetime of 310 ns in the as-grown p-type epilayer decreases to 90 ns by thermal treatment in Ar, O2, or N2 atmospheres (>700 °C), and recovers to 300 ns by H2 annealing (>750 °C). Hydrogen is detected at a concentration of (2-3)×1015 cm-3 in the H2-annealed epilayer. These results suggest that a lifetime killer exists in the p-type epilayer, limiting the carrier lifetime to 90 ns and is passivated by hydrogen annealing, resulting in the improved carrier lifetime of 300 ns.

  10. Pd/Ni-WO3 anodic double layer gasochromic device

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

    2004-04-20

    An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

  11. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    SciTech Connect

    Chen, Dazheng; Zhang, Chunfu Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  12. Mg-doping for improved long-term cyclability of layered Na-ion cathode materials - The example of P2-type NaxMg0.11Mn0.89O2

    NASA Astrophysics Data System (ADS)

    Buchholz, Daniel; Vaalma, Christoph; Chagas, Luciana Gomes; Passerini, Stefano

    2015-05-01

    Sodium-ion batteries (SIBs) are establishing themselves as a low-cost alternative to the widespread lithium-ion technology, a trend that is exemplified by the use of aluminium as anode current collector. In order to be in line with this philosophy, environmentally friendly, abundant and cheap materials need to be used in order to provide a complementary rather than competing battery technology other than lithium-ion. With the same scope in mind, herein we present the structural and electrochemical characterization of P2-type NaxMg0.11Mn0.89O2 material to demonstrate the effectiveness of Mg-doping for the development of future layered cathode materials. Of particular interest is the effect on the long-term cyclability (200 cycles), which has not been reported, yet. As shown in the manuscript, a Mg content as low as 11% in the MO2 layer leads to a smoothing of the potential profile, very high coulombic efficiencies exceeding 99.5% at 12 mA g-1 and a stable long-term cycling behaviour.

  13. Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane

    SciTech Connect

    Ratnikov, V. V. Kyutt, R. N.; Smirnov, A. N.; Davydov, V. Yu.; Shcheglov, M. P.; Malin, T. V.; Zhuravlev, K. S.

    2013-12-15

    The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.

  14. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    NASA Astrophysics Data System (ADS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-06-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  15. Ultrabroad Photoluminescence and Electroluminescence at New Wavelengths from Doped Organometal Halide Perovskites.

    PubMed

    Zhou, Yang; Yong, Zi-Jun; Zhang, Kai-Cheng; Liu, Bo-Mei; Wang, Zhao-Wei; Hou, Jing-Shan; Fang, Yong-Zheng; Zhou, Yi; Sun, Hong-Tao; Song, Bo

    2016-07-21

    Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths. PMID:27377481

  16. Stacking fault emission in GaN: Influence of n-type doping

    NASA Astrophysics Data System (ADS)

    Hocker, M.; Tischer, I.; Neuschl, B.; Thonke, K.; Caliebe, M.; Klein, M.; Scholz, F.

    2016-05-01

    We present spatially and spectrally resolved cathodoluminescence investigations on the cross section of semipolar ( 11 2 ¯ 2 ) gallium nitride epitaxial layers with high background doping level. The locally varying high carrier concentration leads in emission to a free electron recombination band (FERB) governed on the high energy side by conduction band filling. For the basal plane stacking fault (BSF) of type I1, typically emitting at ≈3.41 eV in low doped GaN, we find a blue shift in emission correlated to the FERB high energy tail. This shift can be perfectly modeled and understood in a quantum well model for the BSF, taking also into account the varying doping level in the barrier region. Thus, the carrier concentration can be finally calculated either from the actual position of the I1 BSF or alternatively from the FERB-related near band edge emission.

  17. The influence of MoO{sub x} gap states on hole injection from aluminum doped zinc oxide with nanoscale MoO{sub x} surface layer anodes for organic light emitting diodes

    SciTech Connect

    Jha, Jitendra Kumar; Santos-Ortiz, Reinaldo; Du, Jincheng; Shepherd, Nigel D.

    2015-08-14

    The effective workfunction of Al doped ZnO films (AZO) increased from 4.1 eV to 5.55 eV after surface modification with nanoscale molybdenum sub-oxides (MoO{sub x}). Hole only devices with anodes consisting of 3 nm of MoO{sub x} on AZO exhibited a lower turn-on voltage (1.5 vs 1.8 V), and larger charge injection (190 vs 118 mA/cm{sup 2}) at the reference voltage, compared to indium tin oxide (ITO). AZO devices with 10 nm of MoO{sub x} exhibited the highest workfunction but performed poorly compared to devices with 3 nm of MoO{sub x}, or standard ITO. Ultraviolet photoelectron, X-ray photoelectron, and optical spectroscopies indicate that the 3 nm MoO{sub x} films are more reduced and farther away from MoO{sub 3} stoichiometry than their 10 nm equivalents. The vacancies associated with non-stoichiometry result in donor-like gap states which we assign to partially occupied Mo 4d levels. We propose that Fowler-Nordheim tunneling from these levels is responsible for the reduction in threshold voltage measured in devices with 3 nm of MoO{sub x}. A schematic band diagram is proposed. The thicker MoO{sub x} layers are more stoichiometric and resistive, and the voltage drop across these layers dominates their electrical performance, leading to an increase in threshold voltage. The results indicate that AZO with MoO{sub x} layers of optimal thickness may be potential candidates for anode use in organic light emitting diodes.

  18. The influence of MoOx gap states on hole injection from aluminum doped zinc oxide with nanoscale MoOx surface layer anodes for organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Jha, Jitendra Kumar; Santos-Ortiz, Reinaldo; Du, Jincheng; Shepherd, Nigel D.

    2015-08-01

    The effective workfunction of Al doped ZnO films (AZO) increased from 4.1 eV to 5.55 eV after surface modification with nanoscale molybdenum sub-oxides (MoOx). Hole only devices with anodes consisting of 3 nm of MoOx on AZO exhibited a lower turn-on voltage (1.5 vs 1.8 V), and larger charge injection (190 vs 118 mA/cm2) at the reference voltage, compared to indium tin oxide (ITO). AZO devices with 10 nm of MoOx exhibited the highest workfunction but performed poorly compared to devices with 3 nm of MoOx, or standard ITO. Ultraviolet photoelectron, X-ray photoelectron, and optical spectroscopies indicate that the 3 nm MoOx films are more reduced and farther away from MoO3 stoichiometry than their 10 nm equivalents. The vacancies associated with non-stoichiometry result in donor-like gap states which we assign to partially occupied Mo 4d levels. We propose that Fowler-Nordheim tunneling from these levels is responsible for the reduction in threshold voltage measured in devices with 3 nm of MoOx. A schematic band diagram is proposed. The thicker MoOx layers are more stoichiometric and resistive, and the voltage drop across these layers dominates their electrical performance, leading to an increase in threshold voltage. The results indicate that AZO with MoOx layers of optimal thickness may be potential candidates for anode use in organic light emitting diodes.

  19. Electrochemical lithium doping of a pentacene molecule semiconductor

    NASA Astrophysics Data System (ADS)

    Fang, Baizeng; Zhou, Haoshen; Honma, Itaru

    2005-06-01

    Li-doped pentacene has been developed by using an electrochemical approach; that is, constant-potential electrolysis. Li-doped pentacene was characterized by Raman spectrometry and x-ray diffraction measurements. Lithium doping introduces a modification of the C-H vibrational modes located at the end of pentacene molecules. A low doping level has been observed for electrochemical synthesis of Li-doped pentacene, and lithium species are supposed to be intercalated between the two-dimensional pentacene layers. The lithium-doped pentacene exhibits a conductivity of ˜6×10-3Scm-1.

  20. Wideband saturable absorption in few-layer molybdenum diselenide (MoSe₂) for Q-switching Yb-, Er- and Tm-doped fiber lasers.

    PubMed

    Woodward, R I; Howe, R C T; Runcorn, T H; Hu, G; Torrisi, F; Kelleher, E J R; Hasan, T

    2015-07-27

    We fabricate a free-standing molybdenum diselenide (MoSe2) saturable absorber by embedding liquid-phase exfoliated few-layer MoSe2 flakes into a polymer film. The MoSe2-polymer composite is used to Q-switch fiber lasers based on ytterbium (Yb), erbium (Er) and thulium (Tm) gain fiber, producing trains of microsecond-duration pulses with kilohertz repetition rates at 1060 nm, 1566 nm and 1924 nm, respectively. Such operating wavelengths correspond to sub-bandgap saturable absorption in MoSe2, which is explained in the context of edge-states, building upon studies of other semiconducting transition metal dichalcogenide (TMD)-based saturable absorbers. Our work adds few-layer MoSe2 to the growing catalog of TMDs with remarkable optical properties, which offer new opportunities for photonic devices. PMID:26367663

  1. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  2. Pulsed laser deposition of rare-earth-doped glasses: a step toward lightwave circuits

    NASA Astrophysics Data System (ADS)

    Morea, R.; Fernandez, J.; Balda, R.; Gonzalo, J.

    2016-02-01

    Pulsed Laser Deposition (PLD) is used to produce Er-doped lead-niobium germanate (PbO-Nb2O5-GeO2) and fluorotellurite (TeO2-ZnO-ZnF2) thin film glasses. Films having high refractive index, low absorption and large transmission are obtained in a narrow processing window that depends on the actual PLD configuration (O2 pressure ˜a few Pa, Laser energy density ˜2-3 J cm-2 for the results presented in this work). However, Er-doped thin film glasses synthetized at room temperature using these experimental parameters show poor photoluminescence (PL) performance due to non-radiative decay channels, such as a large OH- concentration. Thermal annealing allows improving PL intensity and lifetime (τPL), the latter becoming close to that of the parent Er-doped bulk glass. In addition, the use of alternate PLD from host glass and rare-earth targets allows the synthesis of nanostructured thin film glasses with a controlled rare-earth concentration and in-depth distribution, as it is illustrated for Er-doped PbO-Nb2O5-GeO2 film glasses. In this case, PL intensity at 1.53 μm increases with the spacing between Er-doped layers to reach a maximum for a separation between Er-doped layers >= 5 nm, while τPL is close to the bulk value independently of the spacing. Finally, the comparison of these results with those obtained for films grown by standard PLD from Er-doped glass targets suggests that nanostructuration allows reducing rare-earth clustering and concentration quenching effects.

  3. Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

    SciTech Connect

    Chichibu, S. F. Ishikawa, Y.; Furusawa, K.; Miyake, H.; Hiramatsu, K.

    2015-09-21

    Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration of NRCs composed of cation vacancies.

  4. FAST TRACK COMMUNICATION: Electronic structure of a graphene/hexagonal-BN heterostructure grown on Ru(0001) by chemical vapor deposition and atomic layer deposition: extrinsically doped graphene

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron; Mi, Zhou; Xiao, Jie; Dowben, P. A.; Wang, Lu; Mei, Wai-Ning; Kelber, Jeffry A.

    2010-08-01

    A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied σ*(Γ1 +) band dispersion yields an effective mass of 0.05 me for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.

  5. Highly conducting and preferred <220> oriented boron doped nc-Si films for window layers in nc-Si solar cells

    NASA Astrophysics Data System (ADS)

    Mondal, Praloy; Das, Debajyoti

    2016-05-01

    Growth and optimization of the boron dopednanocrystalline silicon (nc-Si) films have been studied by varyingthe gaspressure applied to the hydrogendiluted silane plasma in RF (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) system, using diborane (B2H6) as the dopant gas. High magnitudeof electrical conductivity (~102 S cm-1) and<220>orientedcrystallographic lattice planes have been obtained with high crystalline volume fraction (~86 %) at an optimum pressure of 2.5 Torr. XRD and Raman studies reveal good crystallinity with preferred orientation, suitable for applications in stacked layer devices, particularly in nc-Si solar cells.

  6. Cr-rich layer at the WC/Co interface in Cr-doped WC Co cermets: segregation or metastable carbide?

    NASA Astrophysics Data System (ADS)

    Delanoë, A.; Bacia, M.; Pauty, E.; Lay, S.; Allibert, C. H.

    2004-09-01

    The effect of Cr on the microstructure of WC-Co alloys after liquid-phase sintering is studied as a function of the C content of the alloy and for two Cr for Co substitution ratio. The distribution of Cr is investigated using X-ray energy dispersive spectrometry. A Cr enrichment at WC/Co interfaces is detected for both C- and W-rich alloys. The observations by high-resolution electron microscopy point out a thin face centred cubic layer at the interface between WC and Co. This layer has grown epitaxially on the surface of the WC grains with two orientation relationships depending on the WC plane. The lattice parameter mismatch is close to 0.2% for the basal plane and less than 3% for the prismatic plane of WC. The composition and crystal structure of this compound correspond to the metastable (Cr,W)C phase that is stabilized by the low energy of the WC/(Cr,W)C interface.

  7. Doped semiconductor nanocrystal junctions

    NASA Astrophysics Data System (ADS)

    Borowik, Ł.; Nguyen-Tran, T.; Roca i Cabarrocas, P.; Mélin, T.

    2013-11-01

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND≈1020-1021cm-3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as ND-1/3, and depleted charge linearly increasing with the NC diameter and varying as ND1/3. We thus establish a "nanocrystal counterpart" of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  8. Two-Equation Low-Reynolds-Number Turbulence Modeling of Transitional Boundary Layer Flows Characteristic of Gas Turbine Blades. Ph.D. Thesis. Final Contractor Report

    NASA Technical Reports Server (NTRS)

    Schmidt, Rodney C.; Patankar, Suhas V.

    1988-01-01

    The use of low Reynolds number (LRN) forms of the k-epsilon turbulence model in predicting transitional boundary layer flow characteristic of gas turbine blades is developed. The research presented consists of: (1) an evaluation of two existing models; (2) the development of a modification to current LRN models; and (3) the extensive testing of the proposed model against experimental data. The prediction characteristics and capabilities of the Jones-Launder (1972) and Lam-Bremhorst (1981) LRN k-epsilon models are evaluated with respect to the prediction of transition on flat plates. Next, the mechanism by which the models simulate transition is considered and the need for additional constraints is discussed. Finally, the transition predictions of a new model are compared with a wide range of different experiments, including transitional flows with free-stream turbulence under conditions of flat plate constant velocity, flat plate constant acceleration, flat plate but strongly variable acceleration, and flow around turbine blade test cascades. In general, calculational procedure yields good agreement with most of the experiments.

  9. Quasiparticle excitations of adsorbates on doped graphene

    NASA Astrophysics Data System (ADS)

    Lischner, Johannes; Wickenburg, Sebastian; Wong, Dillon; Karrasch, Christoph; Wang, Yang; Lu, Jiong; Omrani, Arash A.; Brar, Victor; Tsai, Hsin-Zon; Wu, Qiong; Corsetti, Fabiano; Mostofi, Arash; Kawakami, Roland K.; Moore, Joel; Zettl, Alex; Louie, Steven G.; Crommie, Mike

    Adsorbed atoms and molecules can modify the electronic structure of graphene, but in turn it is also possible to control the properties of adsorbates via the graphene substrate. In my talk, I will discuss the electronic structure of F4-TCNQ molecules on doped graphene and present a first-principles based theory of quasiparticle excitations that captures the interplay of doping-dependent image charge interactions between substrate and adsorbate and electron-electron interaction effects on the molecule. The resulting doping-dependent quasiparticle energies will be compared to experimental scanning tunnelling spectra. Finally, I will also discuss the effects of charged adsorbates on the electronic structure of doped graphene.

  10. Strongly Coupled Ternary Hybrid Aerogels of N-deficient Porous Graphitic-C3N4 Nanosheets/N-Doped Graphene/NiFe-Layered Double Hydroxide for Solar-Driven Photoelectrochemical Water Oxidation.

    PubMed

    Hou, Yang; Wen, Zhenhai; Cui, Shumao; Feng, Xinliang; Chen, Junhong

    2016-04-13

    Developing photoanodes with efficient sunlight harvesting, excellent charge separation and transfer, and fast surface reaction kinetics remains a key challenge in photoelectrochemical water splitting devices. Here we report a new strongly coupled ternary hybrid aerogel that is designed and constructed by in situ assembly of N-deficient porous carbon nitride nanosheets and NiFe-layered double hydroxide into a 3D N-doped graphene framework architecture using a facile hydrothermal method. Such a 3D hierarchical structure combines several advantageous features, including effective light-trapping, multidimensional electron transport pathways, short charge transport time and distance, strong coupling effect, and improved surface reaction kinetics. Benefiting from the desirable nanostructure, the ternary hybrid aerogels exhibited remarkable photoelectrochemical performance for water oxidation. Results included a record-high photocurrent density that reached 162.3 μA cm(-2) at 1.4 V versus the reversible hydrogen electrode with a maximum incident photon-to-current efficiency of 2.5% at 350 nm under AM 1.5G irradiation, and remarkable photostability. The work represents a significant step toward the development of novel 3D aerogel-based photoanodes for solar water splitting. PMID:26963768

  11. Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO{sub 2}-Si interfaces

    SciTech Connect

    Mandelis, Andreas; Batista, Jerias; Gibkes, Juergen; Pawlak, Michael; Pelzl, Josef

    2005-04-15

    Laser infrared photocarrier radiometry (PCR) was used with a harmonically modulated low-power laser pump and a superposed dc superband-gap optical bias (a secondary laser beam) to control and monitor the space-charge-layer (SCL) width in oxidized p-Si-SiO{sub 2} and n-Si-SiO{sub 2} interfaces (wafers) exhibiting charged interface-state related band bending. Applying the theory of PCR-SCL dynamics [A. Mandelis, J. Appl. Phys. 97, 083508 (2005)] to the experiments yielded various transport parameters of the samples as well as depth profiles of the SCL exhibiting complete ( p-type Si) or partial (n-type Si) band flattening, to a degree controlled by widely different minority-carrier capture cross section at each interface. The uncompensated charge density at the interface was also calculated from the theory.

  12. Anisotropy of the Electron-Doped Infinite-Layer Superconductor Sr0.9La0.1CuO2

    NASA Astrophysics Data System (ADS)

    Kim, Heon-Jung; Park, Min-Seok; Jung, C. U.; Lee, Sung-Ik; Kim, Mun-Seog

    Anisotropy of a c-axis aligned Sr0.9La0.1CuO2 infinite-layer superconductor was studied by measuring the magnetization in different temperature (M(T)) and angle (M(θ)). The M(θ) and the critical temperature as a function of the angle (Tc2(θ)) deduced from M(T) was well described by the anisotropic Ginzburg-Landua theory with a moderate anisotropy value γ≈9. This low value, which is comparable to that of YBa2Cu3O7-δ implied strong interlayer coupling between CuO2 planes. In this compound, the strong interlayer coupling was thought to solely result from the crystal structure without charge reservoir blocks.

  13. Improved conversion efficiency in dye-sensitized solar cells based on electrospun Al-doped ZnO nanofiber electrodes prepared by seed layer treatment

    SciTech Connect

    Yun Sining; Lim, Sangwoo

    2011-02-15

    The application of electrospun nanofibers in electronic devices is limited due to their poor adhesion to conductive substrates. To improve this, a seed layer (SD) is introduced on the FTO substrate before the deposition of the electrospun composite nanofibers. This facilitates the release of interfacial tensile stress during calcination and enhances the interfacial adhesion of the AZO nanofiber films with the FTO substrate. Dye-sensitized solar cells (DSSC) based on these AZO nanofiber photoelectrodes have been fabricated and investigated. An energy conversion efficiency ({eta}) of 0.54-0.55% has been obtained under irradiation of AM 1.5 simulated sunlight (100 mW/cm{sup 2}), indicating a massive improvement of {eta} in the AZO nanofiber film DSSCs after SD-treatment of the FTO substrate as compared to those with no treatment. The SD-treatment has been demonstrated to be a simple and facile method to solve the problem of poor adhesion between electrospun nanofibers and the conductive substrate. -- Graphical abstract: The poor adhesion between electrospun nanofibers and substrate is improved by a simple and facile seed layer (SD) treatment. The energy conversion efficiency of AZO nanofiber-based DSSCs has been greatly increased by SD-treatment of the FTO substrate. Display Omitted Research highlights: {yields} A simple and facile method (SD-treatment) has been demonstrated. {yields} The poor adhesion between electrospun nanofibers and substrate is improved by the SD-treatment. {yields} The {eta} of AZO nanofiber-based DSSCs has been greatly improved by SD-treatment of the FTO substrate.

  14. Li-Doped Ionic Liquid Electrolytes: From Bulk Phase to Interfacial Behavior

    NASA Technical Reports Server (NTRS)

    Haskins, Justin B.; Lawson, John W.

    2016-01-01

    Ionic liquids have been proposed as candidate electrolytes for high-energy density, rechargeable batteries. We present an extensive computational analysis supported by experimental comparisons of the bulk and interfacial properties of a representative set of these electrolytes as a function of Li-salt doping. We begin by investigating the bulk electrolyte using quantum chemistry and ab initio molecular dynamics to elucidate the solvation structure of Li(+). MD simulations using the polarizable force field of Borodin and coworkers were then performed, from which we obtain an array of thermodynamic and transport properties. Excellent agreement is found with experiments for diffusion, ionic conductivity, and viscosity. Combining MD simulations with electronic structure computations, we computed the electrochemical window of the electrolytes across a range of Li(+)-doping levels and comment on the role of the liquid environment. Finally, we performed a suite of simulations of these Li-doped electrolytes at ideal electrified interfaces to evaluate the differential capacitance and the equilibrium Li(+) distribution in the double layer. The magnitude of differential capacitance is in good agreement with our experiments and exhibits the characteristic camel-shaped profile. In addition, the simulations reveal Li(+) to be highly localized to the second molecular layer of the double layer, which is supported by additional computations that find this layer to be a free energy minimum with respect to Li(+) translation.

  15. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    SciTech Connect

    Seyidov, MirHasan Yu. Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  16. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    NASA Astrophysics Data System (ADS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-06-01

    Lanthanum-doped high quality TlInS2 (TlInS2:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS2:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS2:La. Thermal treatments of TlInS2:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10-14 cm2, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS2:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10-16 cm2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5 deep level defects, are aligned in the

  17. Hybrid window layer for photovoltaic cells

    SciTech Connect

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-02-01

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  18. Hybrid window layer for photovoltaic cells

    SciTech Connect

    Deng, Xunming; Liao, Xianbo; Du, Wenhui

    2011-10-04

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  19. Hybrid window layer for photovoltaic cells

    DOEpatents

    Deng, Xunming

    2010-02-23

    A novel photovoltaic solar cell and method of making the same are disclosed. The solar cell includes: at least one absorber layer which could either be a lightly doped layer or an undoped layer, and at least a doped window-layers which comprise at least two sub-window-layers. The first sub-window-layer, which is next to the absorber-layer, is deposited to form desirable junction with the absorber-layer. The second sub-window-layer, which is next to the first sub-window-layer, but not in direct contact with the absorber-layer, is deposited in order to have transmission higher than the first-sub-window-layer.

  20. (110)-Textured Ca-doped BiFeO3 film on refined Pt(111) electrode layer on glass substrate at reduced temperature

    NASA Astrophysics Data System (ADS)

    Chang, H. W.; Shen, C. Y.; Yuan, F. T.; Tien, S. H.; Lin, S. Y.; Chen, W. A.; Wang, C. R.; Tu, C. S.; Jen, S. U.

    2016-03-01

    Multiferroic and photovoltaic properties of polycrystalline Bi0.85Ca0.15FeO3 (BCFO) film on refined Pt(111) electrode buffered glass substrate have been studied. Optimized Pt(111) electrode layer having large grain size and smooth morphology enables the development of highly (110)-textured BCFO film at a temperature as low as 450 °C. The prepared BCFO film has dense microstructure, fine grain size, and smooth surface morphology. Good ferroelectric properties with the remanent polarization (2Pr) of 108 μC/cm2 and electrical coercive field of 405 kV/cm are achieved. Improved ferromagnetic properties with magnetization of 9.2 emu/cm3 and coercivity of 1250 Oe are also attained. Significant PV properties with open-circuit photovoltage of 0.49 V and the short-circuit photocurrent of 67.4 μA/cm2 at illumination intensity of 228 mW/cm2 are observed, which are comparable to BCFO ceramics or BFO epitaxial films.