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Sample records for driven semiconductor optical

  1. Optical Spin-Transfer-Torque-Driven Domain-Wall Motion in a Ferromagnetic Semiconductor

    NASA Astrophysics Data System (ADS)

    Ramsay, A. J.; Roy, P. E.; Haigh, J. A.; Otxoa, R. M.; Irvine, A. C.; Janda, T.; Campion, R. P.; Gallagher, B. L.; Wunderlich, J.

    2015-02-01

    We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls.

  2. Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

    PubMed

    Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

    2013-09-01

    We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics. PMID:24103966

  3. Enhanced Infrared Magneto-Optical Response of the Nonmagnetic Semiconductor BiTeI Driven by Bulk Rashba Splitting

    NASA Astrophysics Data System (ADS)

    Demkó, L.; Schober, G. A. H.; Kocsis, V.; Bahramy, M. S.; Murakawa, H.; Lee, J. S.; Kézsmárki, I.; Arita, R.; Nagaosa, N.; Tokura, Y.

    2012-10-01

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  4. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  5. Optical pumping in semiconductors

    NASA Astrophysics Data System (ADS)

    Hermann, C.; Lampel, G.; Safarov, V. I.

    Optical Pumping in Semiconductors (OPS) arises from the transfer of angular momentum from light to the localized states of a semiconductor. Spin polarized electrons are thus excited in the conduction band; their polarization is convenient measured through the circular polarization of photoluminescence. This review gives an insight of the various studies based on OPS. After describing the first OPS experiment, we show that this technique allows the determination of band structure properties, and the optical detection of conduction electron spin resonance. The nuclei are polarized by hyperfine interaction, which permits the optical detection of nuclear resonance. A magnetic field transverse to the direction of light propagation produces an electronic depolarization analogous to the Hanle effect. The electron lifetime and spin relaxation time are measured under steady-state conditions by comparison to their Larmor frequency in this transverse field. By activation to Negative Electron Affinity of a GaAs surface, electrons oriented by OPS can be photoemitted into vacuum, leading to a highly spin-polarized beam : we describe a collision experiment in which such a beam transfers angular momentum to atoms. Le Pompage Optique dans les semiconducteurs (POS) provient du transfert de moment angulaire de la lumière vers les états délocalisés d'un semiconducteur. On excite ainsi dans la bande de conduction des électrons polarisés de spin, dont on mesure commodément la polarisation à partir de la polarisation circulaire de la photoluminescence. Cet article de revue présente un aperçu des différentes études fondées sur le POS. Après avoir décrit la première expérience de POS, nous montrons que par cette technique on peut déterminer des propriétés liées à la structure de bande, et détecter optiquement la résonance de spin des électrons de conduction. Les noyaux sont polarisés grâce au couplage hyperfin qui permet également la détection optique de la r

  6. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  7. Nonlinear optical interactions in semiconductors

    NASA Astrophysics Data System (ADS)

    Salour, M. M.

    1985-12-01

    The optical pumping technique in GaAs has led to the development of a novel and highly sensitive optical temperature sensor. Completed is the experiment on two photon optical pumping in ZnO. An external cavity semiconductor laser involving ZnO as a gain medium was demonstrated under two-photon excitation. This laser should have a major impact on the development of tunable blue-green radiation for submarine communication. Completed is a paper on heat buildup in semiconductor platelets. New lasers are used to explore elementary excitation in optical thin film layers of semiconductors. This has led to the first demonstration of the feasibility of room temperature operation of a tunable coherent source involving multiple quantum well material. Completed is the construction of a simple remote (non-contact) temperature sensor to directly measure heat buildup in semiconductor materials as a result of high power optical laser excitation. Finally, an experiment involving optical frequency mixing to probe electrodynamics in the GaAlAs multiple quantumwell and superlattice structures, utilizing two recently constructed tunabel laser systems,has been successful. Attempts were focused on observing a number of new optical effects including nonlinear absorption and transmission phenomena, enhanced spontaneous and stimulated light scattering processes, etc. The construction of an external cavity semiconductor HgCdTe has been successful.

  8. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  9. Optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Dias, Antonio R.; Chau, Kelvin K.; Goodman, Joseph W.

    1991-12-01

    Fiber-optic switching systems typically exhibit large losses associated with splitting and combining of the optical power, and with excess component losses. These losses increase quickly with switch size. To obtain acceptable signal-to-noise performance through large optical switching, optical amplifiers can be used. In applications requiring optical switching, semiconductor optical amplifiers (SOAs) are preferred over erbium-doped fiber amplifiers due to their fast switching speeds and the possibility of their integration in monolithic structures with passive waveguides and electronics. We present a general analysis of optical switching systems utilizing SOAs. These systems, in which the gain provided by SOAs is distributed throughout the optical system, are referred to as distributed optical gain (DOG) systems. Our model predicts the performance and achievable sizes of switches based on the matrix-vector multiplier crossbar and Benes network. It is found that for realistic SOA parameters optical switches accommodating extremely large numbers of nodes are, in principle, achievable.

  10. Optical conductivity for liquid semiconductors

    NASA Astrophysics Data System (ADS)

    Jain, Manish; Ko, Eunjung; Derby, J. J.; Chelikowsky, James

    2002-03-01

    We present calculations for the optical conductivity of several semiconductor liquids: SiGe, GaAs, CdTe, and ZnTe. We perform ab initio molecular dynamics for these liquids. The required interatomic forces are determined using the pseudopotential density functional method. We determine the optical conductivity by considering ensemble averages of the liquid state within the Kubo-Greenwood formalism. In the liquid phase, CdTe and ZnTe exhibit properties that are different from III-V and group IV semiconductors. CdTe and ZnTe remain semiconducting unlike SiGe and GaAs, which are metallic in the melt. These differences in optical conductivities are explained in terms of differences in the microstructure of the liquids. We also verify an empirical rule by Joffe and Regel. Their rule predicts the liquid will remain semiconducting if the short range order of the melt resembles that of the crystalline phase.

  11. Optic probe for semiconductor characterization

    DOEpatents

    Sopori, Bhushan L.; Hambarian, Artak

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  12. Electrically driven optical antennas

    NASA Astrophysics Data System (ADS)

    Kern, Johannes; Kullock, René; Prangsma, Jord; Emmerling, Monika; Kamp, Martin; Hecht, Bert

    2015-09-01

    Unlike radiowave antennas, so far optical nanoantennas cannot be fed by electrical generators. Instead, they are driven by light or indirectly via excited discrete states in active materials in their vicinity. Here we demonstrate the direct electrical driving of an in-plane optical antenna by the broadband quantum-shot noise of electrons tunnelling across its feed gap. The spectrum of the emitted photons is determined by the antenna geometry and can be tuned via the applied voltage. Moreover, the direction and polarization of the light emission are controlled by the antenna resonance, which also improves the external quantum efficiency by up to two orders of magnitude. The one-material planar design offers facile integration of electrical and optical circuits and thus represents a new paradigm for interfacing electrons and photons at the nanometre scale, for example for on-chip wireless communication and highly configurable electrically driven subwavelength photon sources.

  13. Optical Properties of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gaponenko, S. V.

    1998-10-01

    Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum dots, exhibit fascinating behavior and have a multitude of potential applications, especially in the field of communications. This book examines in detail the optical properties of these structures, gives full coverage of theoretical and experimental results, and discusses their technological applications. The author begins by setting out the basic physics of electron states in crystals (adopting a "cluster-to-crystal" approach), and goes on to discuss the growth of nanocrystals, absorption and emission of light by nanocrystals, optical nonlinearities, interface effects, and photonic crystals. He illustrates the physical principles with references to actual devices such as novel light-emitters and optical switches. The book covers a rapidly developing, interdisciplinary field. It will be of great interest to graduate students of photonics or microelectronics, and to researchers in electrical engineering, physics, chemistry, and materials science.

  14. Optical processors using semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Ma, S.; Li, W.; Hu, H.; Dutta, N. K.

    2012-05-01

    Semiconductor optical amplifiers are important for wide range of applications in optical networks, optical tomography and optical logic systems. For many of these applications particularly for optical networks and optical logic, high speed performance of the SOA is important. All optical Boolean operations such as XOR, OR, AND and NOR has been demonstrated using SOA based Mach-Zhender interferometers (SOA-MZI). A rate equation model for SOA-MZI has been developed. The model has been used to analyze the Set-Reset (S-R) latch, the gated S-R latch and the D-Flip-Flop devices. The modeling results suggest that the Flip-Flop circuits should work at high speeds. An optical pseudo-random bit stream (PRBS) generator is important for all-optical encryption circuits. A model of a PRBS generator using SOAMZI based devices has been developed. We show that a PRBS generator can work @ 80 Gb/s using regular SOAs and @ ~ 250 Gb/s or at higher speeds using two-photon absorption based processes in SOAs.

  15. Optical Properties of Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2006-03-01

    Ferromagnetic semiconductors hold great promise for numerous magneto-optics applications. In this talk I detail recent optical spectroscopic studies of as grown and annealed thin films and digitally doped superlattices of Ga1-xMnxAs, prepared in the group of D.D. Awschalom (UCSB) and annealed in the group of N.Samarth (PSU). Annealing induces a large strengthening of the optical conductivity (σ1(φ)), while the frequency dependence of σ1(φ) remains unchanged. This indicates that the scattering rate and Fermi level have not been effected by annealing, despite the large increase in hole density. Our Infrared work on Digital Ferromagnetic Heterostructures reveals a unique ability to tune their optical properties as well as their intrinsic electronic structure without changing the doping/defect level. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, and N. Samarth (Pennsylvania State University).

  16. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  17. Optical Absorption in Liquid Semiconductors

    NASA Astrophysics Data System (ADS)

    Bell, Florian Gene

    An infrared absorption cell has been developed which is suitable for high temperature liquids which have absorptions in the range .1-10('3) cm('-1). The cell is constructed by clamping a gasket between two flat optical windows. This unique design allows the use of any optical windows chemically compatible with the liquid. The long -wavelength limit of the measurements is therefore limited only by the choice of the optical windows. The thickness of the cell can easily be set during assembly, and can be varied from 50 (mu)m to .5 cm. Measurements of the optical absorption edge were performed on the liquid alloy Se(,1-x)Tl(,x) for x = 0, .001, .002, .003, .005, .007, and .009, from the melting point up to 475(DEGREES)C. The absorption was found to be exponential in the photon energy over the experimental range from 0.3 eV to 1.2 eV. The absorption increased linearly with concentration according to the empirical relation (alpha)(,T)(h(nu)) = (alpha)(,1) + (alpha)(,2)x, and the absorption (alpha)(,1) was interpreted as the absorption in the absence of T1. (alpha)(,1) also agreed with the measured absorption in 100% Se at corresponding temperatures and energies. The excess absorption defined by (DELTA)(alpha) = (alpha)(,T)(h(nu))-(alpha)(,1) was interpreted as the absorption associated with Tl and was found to be thermally activated with an activation energy E(,t) = 0.5 eV. The exponential edge is explained as absorption on atoms immersed in strong electric fields surrounding ions. The strong fields give rise to an absorption tail similar to the Franz-Keldysh effect. A simple calculation is performed which is based on the Dow-Redfield theory of absorption in an electric field with excitonic effects included. The excess absorption at low photon energies is proportional to the square of the concentration of ions, which are proposed to exist in the liquid according to the relation C(,i) (PROPORTIONAL) x(' 1/2)(.)e('-E)t('/kT), which is the origin of the thermal activation

  18. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  19. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  20. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  1. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  2. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  3. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  4. Optical temperature indicator using thermochromic semiconductors

    SciTech Connect

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  5. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  6. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  7. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  8. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  9. Electrically driven optical metamaterials.

    PubMed

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  10. Electrically driven optical metamaterials

    PubMed Central

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  11. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  12. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  13. Optical-fiber-coupled optical bistable semiconductor lasers

    SciTech Connect

    Zhing Lichen; Tang Yunxin; Qin Ying; Guo Yili

    1986-12-01

    A compact, low input power optical bistable device, consisting of a photodetector, an optical fiber directional coupler, and a semiconductor laser diode, was presented. The principle is described graphically to explain the observed effects such as hysteresis, differential operational gain and memory functions.

  14. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology. PMID:20078065

  15. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  16. Optical investigations of noncrystalline semiconductors. [considering silicon and boron films

    NASA Technical Reports Server (NTRS)

    Blum, N. A.; Feldman, C.; Moorjani, K.

    1973-01-01

    Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

  17. Space-division optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Kazovsky, Leonid G.; Goodman, Joseph W.

    Benes and distributed gain matrix-vector multiplier (MVM) switches larger than 10 exp 10 x 10 exp can, in principle, be achieved by using semiconductor optical amplifiers (SOA's). In contrast, lumped gain SOA-based MVM switches are limited in size to less than 100 x 100.

  18. Optical Stark effect in 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Sie, Edbert J.; McIver, James W.; Lee, Yi-Hsien; Fu, Liang; Kong, Jing; Gedik, Nuh

    2016-05-01

    Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS2).

  19. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  20. Optical and thermal properties of doped semiconductor

    NASA Astrophysics Data System (ADS)

    Abroug, S.; Saadallah, F.; Yacoubi, N.

    2008-01-01

    The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.

  1. Optical dephasing in semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Siegner, U.; Weber, D.; Göbel, E. O.; Bennhardt, D.; Heuckeroth, V.; Saleh, R.; Baranovskii, S. D.; Thomas, P.; Schwab, H.; Klingshirn, C.; Hvam, J. M.; Lyssenko, V. G.

    1992-08-01

    The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals CdS1-xSex and AlxGa1-xAs has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in CdS1-xSex while the dephasing time in AlxGa1-xAs amounts to only a few picoseconds. In CdS1-xSex dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in CdS1-xSex. In contrast, in AlxGa1-xAs elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in CdS1-xSex and AlxGa1-xAs are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.

  2. An integrated semiconductor device enabling non-optical genome sequencing.

    PubMed

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-21

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome. PMID:21776081

  3. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  4. Optical effects of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jing

    2011-03-01

    BANG-FEN ZHU, Department of Physics and Institute of Advanced Study, Tsinghua University, REN-BAO LIU, Department of Physics, The Chinese University of Hong Kong -- We predict the linear and second-order nonlinear optical effects of spin currents in semiconductors, based on systematic symmetry analysis and microscopic calculations with realistic models [1, 2]. By an analogue to the Ampere effect and Oersted effect, we conceived and verified that a spin current can be coupled to a ``photon spin curren'' carried by a polarized light beam, which causes sizeable Faraday rotation without involving net magnetization. Furthermore, a spin current can have a strong second-order nonlinear optical effect with unique polarization-dependence due to the special symmetry properties of the spin current. In particular, for a longitudinal spin current, in which the spins point parallel or anti-parallel to the current direction is a chiral quantity, a chiral sum-frequency effect will be induced. The second-order optical effects of spin currents have been experimentally verified immediately after the theoretical prediction. These discoveries represent new phenomena in magneto-optics, with potential spin-photonic applications. They bring new opportunities to research of spintronics and may also facilitate research of topological insulators where the edge states form pure spin currents. This work was supported by the NSFC Grant Nos.10574076, 10774086, and the Basic Research Program of China Grant 2006CB921500, Hong Kong RGC HKU 10/CRF/08 and Hong Kong GRF CUHK 402207.

  5. Optically controlled spins in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Economou, Sophia

    2010-03-01

    Spins in charged semiconductor quantum dots are currently generating much interest, both from a fundamental physics standpoint, as well as for their potential technological relevance. Being naturally a two-level quantum system, each of these spins can encode a bit of quantum information. Optically controlled spins in quantum dots possess several desirable properties: their spin coherence times are long, they allow for all-optical manipulation---which translates into fast logic gates---and their coupling to photons offers a straightforward route to exchange of quantum information between spatially separated sites. Designing the laser fields to achieve the unprecedented amount of control required for quantum information tasks is a challenging goal, towards which there has been recent progress. Special properties of hyperbolic secant optical pulses enabled the design of single qubit rotations, initially developed about the growth axis z [1], and later about an arbitrary direction [2]. Recently we demonstrated our theoretical proposal [1] in an ensemble of InAs/GaAs quantum dots by implementing ultrafast rotations about the z axis by an arbitrary angle [3], with the angle of rotation as a function of the optical detuning in excellent agreement with the theoretical prediction. We also developed two-qubit conditional control in a quantum dot `molecule' using the electron-hole exchange interaction [4]. In addition to its importance in quantum dot-based quantum computation, our two-qubit gate can also play an important role in photonic cluster state generation for measurement-based quantum computing [5]. [1] S. E. Economou, L. J. Sham, Y. Wu, D. S. Steel, Phys. Rev. 74, 205415 (2006) [2] S. E. Economou and T. L. Reinecke, Phys. Rev. Lett., 99, 217401 (2007) [3] A. Greilich, S. E. Economou et al, Nature Phys. 5, 262 (2009) [4] S. E. Economou and T. L. Reinecke, Phys. Rev. B, 78, 115306 (2008) [5] S. E. Economou, N. H. Lindner, and T. Rudolph, in preparation

  6. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices. PMID:26694227

  7. Optical investigations of nanostructured oxides and semiconductors

    NASA Astrophysics Data System (ADS)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  8. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  9. Nonlinear-microscopy optical-pulse sources based on mode-locked semiconductor lasers.

    PubMed

    Yokoyama, H; Sato, A; Guo, H-C; Sato, K; Mure, M; Tsubokawa, H

    2008-10-27

    We developed picosecond optical-pulse sources suitable for multiphoton microscopy based on mode-locked semiconductor lasers. Using external-cavity geometry, stable hybrid mode locking was achieved at a repetition rate of 500 MHz. Semiconductor optical amplifiers driven by synchronized electric pulses reached subharmonic optical-pulse repetition rates of 1-100 MHz. Two-stage Yb-doped fiber amplifiers produced optical pulses of 2 ps duration, with a peak power of a few kilowatts at a repetition rate of 10 MHz. These were employed successfully for nonlinear-optic bio-imaging using two-photon fluorescence, second-harmonic generation, and sum-frequency generation of synchronized two-color pulses. PMID:18958056

  10. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  11. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  12. Periodically Diameter-Modulated Semiconductor Nanowires for Enhanced Optical Absorption.

    PubMed

    Ko, Minjee; Baek, Seong-Ho; Song, Bokyung; Kang, Jang-Won; Kim, Shin-Ae; Cho, Chang-Hee

    2016-04-01

    A diameter-modulated silicon nanowire array to enhance the optical absorption across broad spectral range is presented. Periodic shape engineering is achieved using conventional semiconductor processes and the unique optical properties are analyzed. The periodicity in the diameter of the silicon nanowires enables stronger and more closely spaced optical resonances, leading to broadband absorption enhancement. PMID:26833855

  13. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  14. Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2014-02-01

    The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

  15. Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

  16. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  17. Optical absorption in semiconductor nanorings under electric and magnetic fields

    NASA Astrophysics Data System (ADS)

    Zhang, Tong-Yi; Cao, Jun-Cheng; Zhao, Wei

    2005-01-01

    The optical absorption in semiconductor nanorings under a lateral DC field and a perpendicular magnetic field is numerically simulated by coherent wave approach. The exciton dominated optical absorption is compared with the free-carrier interband absorption to demonstrate the key role of Coulomb interaction between electron and hole. The influence of the lateral DC field and the perpendicular magnetic field on the optical absorption are discussed in detail. It shows that the lateral DC field can significantly enhance the Aharonov-Bohm effect of the neutral excitons in semiconductor nanorings.

  18. Optical trapping with Bessel beams generated from semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Soboleva, K. K.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

    2014-12-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations.

  19. Frequency chirping in semiconductor-optical fiber ring laser

    SciTech Connect

    Zhang, Jiangping; Ye, Peida )

    1990-01-01

    In this letter, a complete small-signal analysis for frequency chirping in the semiconductor-optical fiber ring laser is presented. It shows that chirp-to-power ratio (CPR) strongly depends on the junction phase shift, the optical coupling, and the phase detuning between two cavities, especially if the modulation frequency is below the gigahertz range. 7 refs.

  20. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  1. Multidimensional coherent optical spectroscopy of semiconductor nanostructures: a review

    NASA Astrophysics Data System (ADS)

    Nardin, Gaël

    2016-02-01

    Multidimensional coherent optical spectroscopy (MDCS) is an elegant and versatile tool to measure the ultrafast nonlinear optical response of materials. Of particular interest for semiconductor nanostructures, MDCS enables the separation of homogeneous and inhomogeneous linewidths, reveals the nature of coupling between resonances, and is able to identify the signatures of many-body interactions. As an extension of transient four-wave mixing (FWM) experiments, MDCS can be implemented in various geometries, in which different strategies can be used to isolate the FWM signal and measure its phase. I review and compare different practical implementations of MDCS experiments adapted to the study of semiconductor materials. The power of MDCS is illustrated by discussing experimental results obtained on semiconductor nanostructures such as quantum dots, quantum wells, microcavities, and layered semiconductors.

  2. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  3. Ultrafast laser-induced changes in optical properties of semiconductors

    SciTech Connect

    Chirila, C. C.; Lim, Freda C. H.; Gavaza, M. G.

    2012-04-01

    We study the effect of laser radiation on optical properties of semiconductors of industrial interest. The material is pumped with a laser of chosen central frequency, for which the absorption is maximal, thus inducing electron dynamics, which modifies the optical properties. By using an improved theoretical model, we study ultrafast dynamic changes in the refraction index and reflectivity corresponding to a wide frequency-interval of probing radiation and identify that interval where these optical changes are most significant.

  4. Message extraction mechanism in optical chaos communications using injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-09-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  5. Emergence of transverse spin in optical modes of semiconductor nanowires.

    PubMed

    Alizadeh, M H; Reinhard, Björn M

    2016-04-18

    The transverse spin angular momentum of light has recently received tremendous attention as it adds a new degree of freedom for controlling light-matter interactions. In this work we demonstrate the generation of transverse spin angular momentum by the weakly-guided mode of semiconductor nanowires. The evanescent field of these modes in combination with the transversality condition rigorously accounts for the occurrence of transverse spin angular momentum. The intriguing and nontrivial spin properties of optical modes in semiconductor nanowires are of high interest for a broad range of new applications including chiral optical trapping, quantum information processing, and nanophotonic circuitry. PMID:27137285

  6. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  7. Statistical Transmutation in Floquet Driven Optical Lattices

    NASA Astrophysics Data System (ADS)

    Sedrakyan, Tigran A.; Galitski, Victor M.; Kamenev, Alex

    2015-11-01

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state.

  8. Statistical Transmutation in Floquet Driven Optical Lattices.

    PubMed

    Sedrakyan, Tigran A; Galitski, Victor M; Kamenev, Alex

    2015-11-01

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state. PMID:26588392

  9. Optical spectroscopy of organic semiconductor monolayers

    NASA Astrophysics Data System (ADS)

    He, Rui; Tassi, Nancy G.; Blanchet, Graciela B.; Pinczuk, Aron

    2011-02-01

    Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.

  10. Optical spectroscopy of organic semiconductor monolayers

    NASA Astrophysics Data System (ADS)

    He, Rui; Tassi, Nancy G.; Blanchet, Graciela B.; Pinczuk, Aron

    2010-10-01

    Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.

  11. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  12. Hydrodynamic synchronisation of optically driven rotors

    NASA Astrophysics Data System (ADS)

    Debono, Luke J.; Box, Stuart; Phillips, David B.; Simpson, Stephen H.; Hanna, Simon

    2015-08-01

    Hydrodynamic coupling is thought to play a role in the coordinated beating of cilia and flagella, and may inform the future design of artificial swimmers and pumps. In this study, optical tweezers are used to investigate the hydrodynamic coupling between a pair of driven oscillators. The theoretical model of Lenz and Ryskin [P. Lenz and A. Ryskin, Phys. Biol. 3, 285{294 (2006)] is experimentally recreated, in which each oscillator consists of a sphere driven in a circular trajectory. The optical trap position is maintained ahead of the sphere to provide a tangential driving force. The trap is also moved radially to harmonically constrain the sphere to the circular trajectory. Analytically, it has been shown that two oscillators of this type are able to synchronise or phase-lock under certain conditions. We explore the interplay between synchronisation mechanisms and find good agreement between experiment, theory and Brownian dynamics simulations.

  13. Fiber optic mounted laser driven flyer plates

    SciTech Connect

    Paisley, D.L.

    1990-12-31

    This invention is comprised of a laser driven flyer plate where the flyer plate is deposited directly onto the squared end of an optical fiber. The plasma generated by a laser pulse drives the flyer plate toward a target. In another embodiment, a first metal layer is deposited onto the squared end of an optical fiber, followed by a layer of a dielectric material and a second metal layer. The laser pulse generates a plasma in the first metal layer, but the plasma is kept away from the second metal layer by the dielectric layer until the pressure reaches the point where shearing occurs. 2 figs.

  14. Zero-field optical manipulation of magnetic ions in semiconductors.

    PubMed

    Myers, R C; Mikkelsen, M H; Tang, J-M; Gossard, A C; Flatté, M E; Awschalom, D D

    2008-03-01

    Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible. PMID:18278049

  15. Optical velocimeters for moving surfaces using gas and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya.; Dubnistshev, Yu. N.; Meledin, V. G.

    1990-10-01

    A differential arrangement using a laser for the measurement of the velocity of moving surfaces is discussed. Configurations of optical velocimeters with diffraction beam-splitters are shown not to be critical on the wavelength stability of a semiconductor laser. Laser meters measuring the velocity and length of rolled stock have been built on the basis of the devices considered.

  16. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  17. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  20. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  3. Demonstration of slow light in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Patil, Anoop C.; Venkitesh, Deepa; Dexter, Karl; Anandarajah, Prince; Barry, Liam P.

    2011-08-01

    Slow light generation through four wave mixing is experimentally investigated in a non-linear semiconductor optical amplifier (SOA). The mechanism of slow-light generation is analyzed through gain saturation behavior of the SOA. The delay of the probe beam is controlled optically by pump-probe detuning. A delay of 260 ps is achieved for sinusoidal modulation at 0.5 GHz corresponding to a RF phase change of 0.26π.

  4. Demonstration of slow light in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Patil, Anoop C.; Venkitesh, Deepa; Dexter, Karl; Anandarajah, Prince; Barry, Liam P.

    2010-12-01

    Slow light generation through four wave mixing is experimentally investigated in a non-linear semiconductor optical amplifier (SOA). The mechanism of slow-light generation is analyzed through gain saturation behavior of the SOA. The delay of the probe beam is controlled optically by pump-probe detuning. A delay of 260 ps is achieved for sinusoidal modulation at 0.5 GHz corresponding to a RF phase change of 0.26π.

  5. Tunable excitation of mid-infrared optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Olafsen, Linda J.; Kunz, Jeremy; Ongstad, Andrew P.; Kaspi, Ron

    2013-01-01

    While conventional semiconductor lasers employ electrical injection for carrier excitation, optically pumped semiconductor lasers (OPSLs) have demonstrated high output powers and high brightness in the mid-infrared. An important consideration for optically pumped lasers is efficient absorption of the pump beam, which can be achieved through increasing the number of periods in the active region, by placing the active region in a cavity with an optical thickness of twice the pump wavelength between distributed Bragg reflectors (Optical Pumping Injection Cavity), or by periodically inserting the active quantum wells into an InGaAsSb waveguide designed to absorb the pump radiation (Integrated Absorber). A tunable optical pumping technique is utilized by which threshold intensities are minimized and efficiencies are maximized. The near-IR idler output of a Nd:YAG-pumped optical parametric oscillator (10 Hz, ~4 ns) is the tunable optical pumping source in this work. Results are presented for an OPSL with a type-II W active region embedded in an integrated absorber to enhance the absorption of the optical pump beam. Emission wavelengths range from 4.64 μm at 78 K to 4.82 μm at 190 K for optical pump wavelengths ranging from 1930-1950 nm. The effect of wavelength tuning is demonstrated and compared to single wavelength pumping (1940 nm) at a higher duty cycle (20- 30%). Comparisons are also made to other OPSLs, including a discussion of the characteristic temperature and high temperature performance of these devices.

  6. Experimental and theoretical investigation of semiconductor optical amplifier (SOA)-based all-optical wavelength converters

    NASA Astrophysics Data System (ADS)

    Dailey, James M.

    Use of fiber-optical networks has increased along with the growing demand for higher data throughputs. As data bandwidths increase, physical switching technologies must also scale accordingly. Optical-electrical-optical (OEO) switching technologies are widely utilized, where incoming optical signals are converted into and processed as electrical signals before conversion back into the optical domain. However, issues such as speed, cost, and power consumption have driven interest in the development of all-optical techniques, where data remains in the optical domain while being processed. Semiconductor optical amplifiers (SOAs) have shown great promise for realizing all-optical technologies. Our work begins with the experimental characterization of SOAs, and we discuss the use of a time-resolved spectroscopy technique. We present a detailed analysis clarifying measurement requirements, though we conclude that this simple technique provides insufficient resolution for characterizing high-speed optical systems. We discuss the measurement theory for spectrograms, which provide high signal-to-noise ratios, excellent temporal resolution, and are sensitive to phase dynamics. We apply the spectrogram measurement to the characterization of an SOA. We develop a system of rate equations for modeling SOA dynamics, beginning with a detailed density matrix analysis providing expressions for gain and chirp without invoking the linewidth-enhancement factor. In accordance with the measurement results, we include a carrier temperature rate calculation in order to capture ultrafast dynamics. The traveling wave partial differential equations are solved so that both forward and reverse propagating signals are accurately modeled, and the results show good agreement with the spectrogram measurement. We identify the free-carrier plasma and the asymmetrical broadening terms in the real and imaginary parts of the refractive index as driving factors in the relatively larger ultrafast response

  7. Integrated superconducting detectors on semiconductors for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.

    2016-05-01

    Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

  8. Optical Fano resonance of an individual semiconductor nanostructure.

    PubMed

    Fan, Pengyu; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L

    2014-05-01

    Fano resonances with a characteristic asymmetric line shape can be observed in light scattering, transmission and reflection spectra of resonant optical systems. They result from interference between direct and indirect, resonance-assisted pathways. In the nanophotonics field, Fano effects have been observed in a wide variety of systems, including metallic nanoparticle assemblies, metamaterials and photonic crystals. Their unique properties find extensive use in applications, including optical filtering, polarization selectors, sensing, lasers, modulators and nonlinear optics. We report on the observation of a Fano resonance in a single semiconductor nanostructure, opening up opportunities for their use in active photonic devices. We also show that Fano-resonant semiconductor nanostructures afford the intriguing opportunity to simultaneously measure the far-field scattering response and the near-field energy storage by extracting photogenerated charge. Together they can provide a complete experimental characterization of this type of resonance. PMID:24747781

  9. Statistical Transmutation in Periodically Driven Optical Lattices

    NASA Astrophysics Data System (ADS)

    Sedrakyan, Tigran; Galitski, Victor; Kamenev, Alex

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state. This work was supported by the PFC-JQI (T.S.), USARO and Simons Foundation (V.G.), and DOE Contract DE-FG02-08ER46482 (A.K.).

  10. Testing methodologies and systems for semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  11. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  12. Optically Loaded Semiconductor Quantum Memory Register

    NASA Astrophysics Data System (ADS)

    Kim, Danny; Kiselev, Andrey A.; Ross, Richard S.; Rakher, Matthew T.; Jones, Cody; Ladd, Thaddeus D.

    2016-02-01

    We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrödinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.

  13. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  14. All-optical active switching in individual semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Piccione, Brian; Cho, Chang-Hee; van Vugt, Lambert K.; Agarwal, Ritesh

    2012-10-01

    The imminent limitations of electronic integrated circuits are stimulating intense activity in the area of nanophotonics for the development of on-chip optical components, and solutions incorporating direct-bandgap semiconductors are important in achieving this end. Optical processing of data at the nanometre scale is promising for circumventing these limitations, but requires the development of a toolbox of components including emitters, detectors, modulators, waveguides and switches. In comparison to components fabricated using top-down methods, semiconductor nanowires offer superior surface properties and stronger optical confinement. They are therefore ideal candidates for nanoscale optical network components, as well as model systems for understanding optical confinement. Here, we demonstrate all-optical switching in individual CdS nanowire cavities with subwavelength dimensions through stimulated polariton scattering, as well as a functional NAND gate built from multiple switches. The device design exploits the strong light-matter coupling present in these nanowires, leading to footprints that are a fraction of those of comparable silicon-based dielectric contrast and photonic crystal devices.

  15. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, N. J.; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, R. K.; Flatté, M. E.; Johnston-Halperin, E.

    2016-03-01

    We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe /MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. As the regime of large nuclear inhomogeneity is accessible in these heterostructures for magnetic fields <3 kG , inferences from this result resolve a long-standing and contentious dispute concerning the origin of spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding clarifies the importance of future experiments probing the time-dependent exchange interaction at a ferromagnet-semiconductor interface and its consequences for spin dissipation and transport during spin pumping.

  16. Nonlinear intersubband optical absorption in a semiconductor quantum well

    NASA Technical Reports Server (NTRS)

    Ahn, D.; Chuang, S. L.

    1987-01-01

    The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/sq cm for the well size L = 126.5 A with 3.0 x 10 to the 16th/cu cm electrons.

  17. Microwave photonic interference mitigation filter based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Xu, Enming; Zhang, Xinliang; Zhou, Lina; Zhang, Yu; Yu, Yuan; Wang, Fei; Huang, Dexiu

    2009-11-01

    A microwave photonic interference mitigation filter is proposed and experimentally demonstrated. The structure is based on a recirculating delay line loop comprising a semiconductor optical amplifier (SOA) and a tunable narrowband optical filter. Converted signal used as negative tap is generated through wavelength conversion employing cross-gain modulation of amplified spontaneous emission spectrum of the SOA. The converted signal circulating in the RDL loop realizes a high quality factor (Q) response after photo-detection. A bandpass response with negative coefficients combined with a broadband allpass response achieves a notch response with flat passband.

  18. Transient optical properties of semiconductors under femtosecond x-ray irradiation

    NASA Astrophysics Data System (ADS)

    Tkachenko, Victor; Medvedev, Nikita; Li, Zheng; Piekarz, Przemysław; Ziaja, Beata

    2016-04-01

    Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

  19. Adaptive optics assisted reconfigurable liquid-driven optical switch

    NASA Astrophysics Data System (ADS)

    Fuh, Yiin-Kuen; Huang, Wei-Chi

    2013-07-01

    This study demonstrates a mechanical-based, liquid-driven optical switch integrated with adaptive optics and a reconfigurable black liquid (dye-doped liquid). The device aperture can be continuously tuned between 0.6 and 6.9 mm, precisely achieved by a syringe pump for volume control. Adaptive optics (AO) capability and possible enhancement of the lost power intensity of the ink-polluted glass plate have also been experimentally investigated. While measuring power intensity with/without AO indicates only a marginal difference of ˜1%, a significant difference of 3 s in the response characteristic of "switching on" time can be observed. An extremely high contrast ratio of ˜105 for a red-colored light is achieved.

  20. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  1. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  2. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  3. Simulating semiconductor structures for next-generation optical inspection technologies

    NASA Astrophysics Data System (ADS)

    Golani, Ori; Dolev, Ido; Pond, James; Niegemann, Jens

    2016-02-01

    We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection.

  4. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  5. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGESBeta

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  6. Petahertz optical drive with wide-bandgap semiconductor

    NASA Astrophysics Data System (ADS)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  7. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    NASA Astrophysics Data System (ADS)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  8. Arnold diffusion in a driven optical lattice.

    PubMed

    Boretz, Yingyue; Reichl, L E

    2016-03-01

    The effect of time-periodic forces on matter has been a topic of growing interest since the advent of lasers. It is known that dynamical systems with 2.5 or more degrees of freedom are intrinsically unstable. As a consequence, time-periodic driven systems can experience large excursions in energy. We analyze the classical and quantum dynamics of rubidium atoms confined to a time-periodic optical lattice with 2.5 degrees of freedom. When the laser polarizations are orthogonal, the system consists of two 1.5 uncoupled dynamical systems. When laser polarizations are turned away from orthogonal, an Arnold web forms and the dynamics undergoes a fundamental change. For parallel polarizations, we find huge random excursions in the rubidium atom energies and significant entanglement of energies in the quantum dynamics. PMID:27078351

  9. Arnold diffusion in a driven optical lattice

    NASA Astrophysics Data System (ADS)

    Boretz, Yingyue; Reichl, L. E.

    2016-03-01

    The effect of time-periodic forces on matter has been a topic of growing interest since the advent of lasers. It is known that dynamical systems with 2.5 or more degrees of freedom are intrinsically unstable. As a consequence, time-periodic driven systems can experience large excursions in energy. We analyze the classical and quantum dynamics of rubidium atoms confined to a time-periodic optical lattice with 2.5 degrees of freedom. When the laser polarizations are orthogonal, the system consists of two 1.5 uncoupled dynamical systems. When laser polarizations are turned away from orthogonal, an Arnold web forms and the dynamics undergoes a fundamental change. For parallel polarizations, we find huge random excursions in the rubidium atom energies and significant entanglement of energies in the quantum dynamics.

  10. Trion-based Optical Processes in Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Baldwin, Thomas Kendrick

    In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood by considering the motion of these carriers individually, the optical properties are largely determined by their mutual interaction. The hydrogen-like bound state of an electron with a hole, or exciton, is the fundamental optical excitation in direct-gap materials such as gallium arsenide and cadmium telluride. In this dissertation, we consider charged excitons, or trions. A bound state of an exciton with a resident electron or hole, trions are a relatively pure manifestation of the three-body problem which can be studied experimentally. This is a subject of practical as well as academic interest: Since the trion is the elementary optical excitation of a resident free carrier, the related optical processes can open pathways for manipulating carrier spin and carrier transport. We present three experimental investigations of trion-based optical processes in semiconductor quantum wells. In the first, we demonstrate electromagnetically induced transparency via the electron spin coherence made possible by the trion transition. We explore the practical limits of this technique in high magnetic fields. In the second, we present a direct measurement of trion and exciton oscillator strength at high magnetic fields. These data reveal insights about the structure of the trion's three-body wavefunction relative to that of its next excited state, the triplet trion. In the last, we investigate the mechanism underlying exciton-correlated tunneling, an optically-controllable transport process in mixed-type quantum wells. Extensive experimental studies indicate that it is due to a local, indirect interaction between an exciton and a hole, forming one more example of a trion-mediated optical process. This dissertation includes previously published co-authored material.

  11. Local measurement of optically induced photocurrent in semiconductor structures

    NASA Astrophysics Data System (ADS)

    Benesova, Marketa; Dobis, Pavel; Tomanek, Pavel; Uhdeova, Nadezda

    2003-07-01

    Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

  12. Space division switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, R. F.; Kazovsky, L. G.; Goodman, J. W.

    Semiconductor optical amplifiers (SOA's) can be used in space-division (SD) switches to provide both switching and optical gain. We present a general analysis of optical switches using SOA's, considering noise and saturation effects associated with amplified spontaneous emission. Based on this analysis, we derive size limitations of SD switches. Three specific SD switching architectures are considered. For a lumped gain matrix vector multiplier (MVM) switch, switch sizes are limited to the range of 3000 x 3000 for SOA's with saturation output powers of 100 mW. Based on the effects considered in our analysis, distributed gain MVM switches and Benes switches are not limited by signal-to noise ratio and saturation up to sizes of 10 exp 80 x 10 exp 80 for SOA's with saturation output powers of 100 mW.

  13. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds. PMID:27459319

  14. Theoretical investigation of a semiconductor ring laser driven by Chua's oscillator

    NASA Astrophysics Data System (ADS)

    Takougang Kingni, Sifeu; Woafo, Paul

    2013-06-01

    The modeling and numerical investigation of the dynamical behavior of a semiconductor ring laser (SRL) driven by Chua's oscillator are reported. By increasing the coupling strength between the SRL and Chua's oscillator at a fixed bias current, the SRL exhibits an intermittency route to anti-phase chaos. However, for a fixed value of the coupling strength, we report a period-doubling route to out-of-phase and anti-phase chaos when varying one of the parameters of the Chua's oscillator are reported. We also demonstrate that a SRL driven by the chaotic output of Chua's oscillator generates a more complex chaos compared to the one found in a SRL subject to a sinusoidally modulated current. This new way of modulation of semiconductor lasers would not only bring a general benefit in the physical equipment and reduce their cost but could have an impact for some relevant engineering applications.

  15. Optical coupling of deep-subwavelength semiconductor nanowires.

    PubMed

    Cao, Linyou; Fan, Pengyu; Brongersma, Mark L

    2011-04-13

    Systems of coupled resonators manifest a myriad of exciting fundamental physical phenomena. Analogous to the synthesis of molecules from single atoms, the construction of photonic molecules from stand-alone optical resonators represents a powerful strategy to realize novel functionalities. The coupling of high quality factor (Q) dielectric and semiconductor microresonators is by now well-understood and chipscale applications are abound. The coupling behavior of low-Q nanometallic structures has also been exploited to realize high-performance plasmonic devices and metamaterials. Although dense arrays of semiconductor nanoparticles and nanowires (NWs) find increasing use in optoelectronic devices, their photonic coupling has remained largely unexplored. These high refractive index nano-objects can serve as low-Q optical antennas that can effectively receive and broadcast light. We demonstrate that the broad band antenna response of a pair of NWs can be tuned significantly by engineering their optical coupling and develop an intuitive coupled-mode theory to explain our observations. PMID:21443245

  16. Ultrafast optical studies of surface reaction processes at semiconductor interfaces

    SciTech Connect

    Miller, R.J.D.

    1993-03-01

    Rectifying properties of semiconductor liquid junctions make them a simple system for converting and storing optical energy. However, interfacial electron or hole carrier transfer and competing non-radiative (energy loss) channels are not well understood at surfaces. This research has explored the use of three optical techniques, Surface Space Charge Electrooptic Sampling, Surface Restricted Transient Grating Spectroscopy, and Femtosecond Optical Kerr Spectroscopy (OKE) to obtain time evolution of the surface spatial distribution of photogenerated charge carriers, photocarrier population dynamics at semiconductor interfaces, and solvent modes responsible for charge localization and separation. These studies have shown that carriers arrive at GaAs(100) surfaces on the hundred femtosecond time scale. Improvements in time resolution, using surface grating spectroscopy, have shown interfacial hole transfer is occurring on the picosecond time scale. The OKE approach to solvent dynamics has determined the response of water to a field is multiexpontential with a major relaxation component of 100 femtoseconds. The observed interfacial hole transfer to Se[sup [minus]2] acceptors is occurring on this same time scale. This observation illustrates charge transfer processes can occur in the strong electronic coupling limit and can be competitive with carrier thermalization.

  17. DBR-free optically pumped semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  18. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes

    NASA Astrophysics Data System (ADS)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  19. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs.

    PubMed

    Lisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijärvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  20. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    PubMed Central

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  1. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  2. Coherent Semiconductor Laser Systems For Optical Intersatellite Links

    NASA Astrophysics Data System (ADS)

    Somerset, R. J.; Fletcher, G. D.

    1990-04-01

    Semiconductor laser based optical intersatellite links are attractive for use in both DRS type applications, and as links in the existing satellite-based telecommunications networks (for example between EUTELSAT SMS and INTELSAT IBS business services satellites). Initial ISL experiments will demonstrate direct detection systems using intensity modulation. Coherent systems offer significant improvements over these: the use of frequency shift keying modulation and heterodyne receivers provide significantly improved system sensitivities, which will allow practical systems with reliable laser sources (50 mW CW), and small optical telescopes (20 cm diameter). The SILEX ADD-ON CHANNEL is intended to demonstrate the potential of such systems within the framework of the ESA SILEX program.

  3. Solitary and coupled semiconductor ring lasers as optical spiking neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Beri, S.; Danckaert, J.; van der Sande, G.

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  4. Semiconductor-doped liquid-core optical fiber.

    PubMed

    Hreibi, Ali; Gérôme, Frédéric; Auguste, Jean-Louis; Zhang, Yu; Yu, William W; Blondy, Jean-Marc

    2011-05-01

    A semiconductor liquid-core optical fiber has been made by simply filling the hollow core of a capillary waveguide with nanoparticles suspended in toluene media. Under a low continuous optical power excitation at 532 nm, the emission of PbSe particles was clearly demonstrated in the infrared region and then partially maintained in the core of the fiber by the total internal reflection mechanism. Finally, due to the guided propagation, which results in multiple absorption effects, a linear shift of the emission peak toward longer wavelengths was observed (~0.32 nm/cm). As a proof of concept, this original demonstration of visible-to-infrared conversion could lead to the development of active fibered devices at wavelengths not covered by the conventional rare-earth ion doping. PMID:21540972

  5. Nonlinear optical properties of metal and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Whelan, Aine M.; Benrezzak, Sakina; Brennan, Margaret E.; Kelly, John M.; Blau, Werner J.

    2003-03-01

    The synthesis of metal (Au,Ag) and semiconductor (PbS) nanoparticles of specific morphology and shape is reported. The shape of PbS nanoparticles has been varied from spherical to oval to cubic, by use of poly(vinyl alcohol) (PVA), DNA and ethylene glycol as stabilisers respectively. For the first time, a seeding method has been used to successfully prepare PVA stabilised gold and silver nanoparticles. Characterisation of the third order optical nonlinearity of the nanoparticles has been carried out using the Z-scan technique with values of Im ÷ (3) as large as 10-10. Modulation of the magnitude of the nonlinear optical response with morphology in the case of the PbS nanoparticles is presented.

  6. Nonlinear optical properties of atomic vapor and semiconductors

    SciTech Connect

    Kim, D

    1997-06-01

    This thesis contains the study of highly forbidden resonant second harmonic generation (SHG) in atomic potassium vapor using tunable picosecond pulses. Various output characteristics of vapor SHG have been investigated including the input intensity dependence, potassium vapor density dependence, buffer gas pressure dependence, and spatial profile. Recently, the discovery of new nonlinear optical crystals such as barium borate ({beta}-BaB{sub 2}O{sub 4}, BBO) and lithium borate (LiB{sub 3}O{sub 5}, LBO) has greatly improved the performance of a tunable coherent optical devices based on optical parametric generation and amplification. In the second part of this thesis, a homebuilt picosecond optical parametric generator/amplifier (OPG/OPA) system is described in detail, including its construction details and output characteristics. This laser device has found many useful applications in spectroscopic studies including surface nonlinear optical spectroscopy via sum-frequency generation (SFG). The last part of this thesis reports studies on multiphoton-excited photoluminescence from porous silicon and GaN. Multiphoton excitation and photoluminescence can give numerous complementary information about semiconductors not obtainable with one-photon, above-bandgap excitation.

  7. Nonlinear optical transmission of an integrated optical bent coupler in semiconductor-doped glass

    NASA Astrophysics Data System (ADS)

    Guntau, Matthias; Possner, Torsten; Braeuer, Andreas H.; Dannberg, Peter

    1991-08-01

    A technology for monomode slab and strip waveguide fabrication in semiconductor-doped glasses (SDG) is presented. On this basis, directional couplers consisting of both parallel (DC) and bent (BC) couplers of strip waveguides were realized. The optically linear and nonlinear behavior of these devices is described.

  8. Analysis of message extraction in optical chaos communications based on injection-locking synchronization of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-10-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  9. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  10. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  11. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  12. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  13. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  14. Optical response functions of semiconductors: Nearly first-principles calculations

    SciTech Connect

    Zhong, H.

    1993-01-01

    The Local Density Approximation (LDA) and the one-electron perturbation theory is used to compute various optical properties of semiconductors, including the dielectric function, second-harmonic-generation-coefficients, photoelastic constants (characterizing the strain-induced birefrigence) and the optical-activity tensor (describing the differences in the optical response to left-handed and right-handed circularly polarized light). The calculation of the optical activity requires perturbation theory in the vector potential in order to describe the rotation of the plane of polarization perpendicular to the direction of propagation. The author contrasts this approach with scaler-perturbation theory which can be used for the other properties computed. Self-energy effects necessary to obtain the correct band gap are included by the use of a [open quotes]scissors operator[close quotes]. In addition, local-field corrections are included in the dielectric constants and second-harmonic-generation coefficients for selenium and [alpha]-quartz and the photoelastic constants for silicon (for photon frequencies below the band gap). Good agreement (discrepancies of the order of a few percent) is obtained with the experiments. The two components of the optical-activity tensor are computed for both selenium and [alpha]-quartz in the long-wavelength limit but local-field effects have been neglected in the absence of any appropriate formalism. For both materials the computed components are consistent with frequency dependence and relative sign of the phenomenological coupled-oscillator model. For selenium, in the low-frequency range the magnitude of the optical rotatory power, one component of the tensor, is factor of two too small compared with the experiment. For [alpha]-quartz the computed components are a factor of five smaller than the reported values. The possible contributions of local-field corrections and excitonic effects are discussed.

  15. All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Rocha, Peterson; Gallep, Cristiano M.; Conforti, Evandro

    2015-10-01

    An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit.

  16. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  17. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  18. Biologically inspired optics: analog semiconductor model of the beetle exoskeleton

    NASA Astrophysics Data System (ADS)

    Buhl, Kaia; Roth, Zachary; Srinivasan, Pradeep; Rumpf, Raymond; Johnson, Eric

    2008-08-01

    Evolution in nature has produced through adaptation a wide variety of distinctive optical structures in many life forms. For example, pigment differs greatly from the observed color of most beetles because their exoskeletons contain multilayer coatings. The green beetle is disguised in a surrounding leaf by having a comparable reflection spectrum as the leaves. The Manuka and June beetle have a concave structure where light incident at any angle on the concave structures produce matching reflection spectra. In this work, semiconductor processing methods were used to duplicate the structure of the beetle exoskeleton. This was achieved by combining analog lithography with a multilayer deposition process. The artificial exoskeleton, 3D concave multilayer structure, demonstrates a wide field of view with a unique spectral response. Studying and replicating these biologically inspired nanostructures may lead to new knowledge for fabrication and design of new and novel nano-photonic devices, as well as provide valuable insight to how such phenomenon is exploited.

  19. Optical Properties of III-Mn-V Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2008-03-01

    We discuss the important role optical studies have played in our understanding of the electronic structure of III-Mn-V ferromagnetic semiconductors. These extensive studies have established the electronic structure is strongly affected by the strength of the exchange between the Mn local moments and the holes they introduce. Particular focus is given to Ga1-xMnxAs, where spectroscopic studies suggest the metallic state is unconventional. Finally, we will detail our recent experiments into the ultrafast manipulation of magnetism on the nanoscale. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, S. Mack, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, N. Samarth (Pennsylvania State University), F. Chen, A. Azad, J. O'Hara, A.M. Dattelbaum, G. Montano, S. Crooker, and A.J. Taylor (Los Alamos National Laboratory).

  20. Investigation of the optical properties of ordered semiconductor materials

    NASA Astrophysics Data System (ADS)

    McCrae, Jack E., Jr.

    1997-11-01

    Optical Studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs2. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 eV were found by low temperature (4 K) PL measurements. Strongly polarized PL was observed with the E field of the PL parallel to the material's c-axis. A polarization ratio as high as 6:1 was observed. PL on ZnGeP2 in the mid-IR revealed a previously unreported PL peak near 0.35 eV. PR measurements on CdCeAs2 allowed the estimation of the bandgap as a function of temperature. The low temperature bandgap proved to be lower than that reported for electroreflectance measurements on other samples of this compound. Hall effect measurements on CdGeAs2 reveals the dominant acceptor level lies about 120 meV above the valence band.

  1. All-optical switching in semiconductor-doped nonlinear fibers

    NASA Astrophysics Data System (ADS)

    Donkor, Eric

    1999-11-01

    Optical switching devices that can perform at picosecond to femtosecond speeds are on demand because of interest to develop multi-gigabit, multi-user, optical networks. Two fundamental design issues are the choice of nonlinear material as the active medium for the switch and the switching architecture. Wave guide based switches designed with silica fiber have demonstrated ultra-fast switching up to femtosecond speeds. Figure 1 shows the switching speed versus power-length product for different types of materials. At the two extremes are rare-earth doped, and silica. Rare-earth doped materials have the smallest power-length product of about 10 W-cm, but also have the least switching speed. At the other extreme, silica has the fastest switching speed of 1013 Hz but also has the largest power-length product of 6 kW-cm. Semiconductor-doped glasses (SDG) and metal-doped glasses appear to have a good compromise between switching speed and power-length product. There is therefore interest to research such optical materials, and novel switching architectures that can simultaneously down-scale device geometry, and power requirements for switching.

  2. Radiation-tolerant optical links for the ATLAS semiconductor tracker

    NASA Astrophysics Data System (ADS)

    Matheson, John; Charlton, David G.; Chu, Ming-lee; Dowell, John D.; Galagedera, Senerath; Homer, Roger J.; Hou, Li-Shing; Jovanovic, Predrag; Kundu, Nikhil N.; Lee, Shih-chang; McMahon, Thomas J.; Macwaters, Craig; Mahout, Gilles; Morrissey, Martin; Rudge, Alan; Skubic, Bjorn J.; Teng, Ping-kun; Wastie, Roy; Weidberg, Anthony R.; Wilson, John A.

    2002-09-01

    The Large Hadron Collider (LHC), currently under construction at CERN, Geneva, will collide proton beams of energy 7 TeV. The high luminosity of the machine will lead to a severe radiation environment for detectors such as ATLAS. The ATLAS Semiconductor Tracker (SCT) must be able to tolerate a radiation field equivalent to an ionising dose of 10 Mrad (Si) and a neutron fluence of 2x1014cm-2 (1MeV,Si) over the 10 year lifetime of the experiment. The SCT is instrumented by silicon microstrip detectors and their front-end chips (ABCDs). Data is transferred from, and control signals to, the ABCDs using multimode optical links carrying light at 840 nm. The incoming timing, trigger and control (TTC) link uses biphase mark encoding to send 40 Mbit/s control signals along with a 40 MHz clock down a single fibre. Optical signals are received by a p-i-n diode and decoded by DORIC chips. Data in electrical form from the ABCDs is used to moderate two VCSELs by means of a VCSEL driver chip (VDC). Each detector module carries 12 ABCDs and is served by two optical fibres for data readout and one for TTC signals. There are 4088 such modules within the SCT. The system performance specifications and architecture are described, followed by test results on individual components and complete links. The optical fibre, active optical components, chips, packaging and interconnects have all been qualified to the necessary radiation levels. This has involved studies of total dose effects, single event upset and ageing at elevated temperatures and details of these studies are presented.

  3. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  4. Optical Frequency Combs From Semiconductor Lasers and Applications in Ultrawideband Signal Processing and Communications

    NASA Astrophysics Data System (ADS)

    Delfyett, Peter J.; Gee, Sangyoun; Choi, Myoung-Taek; Izadpanah, Hossein; Lee, Wangkuen; Ozharar, Sarper; Quinlan, Franklyn; Yilmaz, Tolga

    2006-07-01

    Modelocked semiconductor lasers are used to generate a set of phase-locked optical frequencies on a periodic grid. The periodic and phase coherent nature of the optical frequency combs makes it possible for the realization of high-performance optical and RF arbitrary-waveform synthesis. In addition, the resulting optical frequency components can be used for communication applications relying on direct detection, dense wavelength division multiplexing (WDM), coherent-detection WDM, optical time-division multiplexing, and optical code division multiple access. This paper highlights the recent results in the use of optical frequency combs generated from semiconductors for ultrawideband signal processing and communication applications.

  5. Electro- and magneto-optic properties of photorefractive semiconductors

    NASA Astrophysics Data System (ADS)

    Dinu, Mihaela

    The photorefractive effect is a low intensity, nonlocal optical nonlinearity which has been studied extensively because of its potential uses. Photorefractive quantum wells exhibit record sensitivities and speeds, and are prime candidates for optical processing applications, both in the spatial (for images) and in the time domain (for the shaping of femtosecond pulses). For this latter application, multiple quantum well devices have to overcome a large bandwidth mismatch with femtosecond pulses, which arises from the resonant nature of photorefractivity at the bandgap. By engineering the excitonic transition spectrum of multiple quantum wells, the bandwidth of photorefractive multiple quantum well devices is increased to match that of ultrafast pulses. In superlattices, breaking of the spatial periodicity leads to the emergence of a wide distribution of critical points and transition energies; we have explored the effect of quasiperiodicity in Fibonacci superlattices, where excitonic interactions concentrate the oscillator strength at low energies and limit the useful diffractive bandwidth. Multiple quantum well structures in which the quantum wells are isolated and the quantum confinement can be tuned along the thickness of the device offer a wide parameter space for bandwidth design. In quantum well devices, almost dispersion-free diffraction can be achieved due to the Kramers-Kronig relationship between the real and imaginary parts of the electro-refraction, which makes the phase of the diffracted pulse linear in frequency. The second part of the thesis concentrates on the photorefractive effect in diluted magnetic semiconductors. In ZnMnSe epilayers, we demonstrate resonant photorefractive diffraction in the blue spectral region. Wide-gap II-VI semiconductors have characteristic properties (such as high absorption coefficients at the gap and low sensitivity to electric fields) which make the fabrication of resonant photorefractive devices in the transverse

  6. Non-adiabatic effects on the optical response of driven systems

    NASA Astrophysics Data System (ADS)

    Fregoso, Benjamin M.; Kolodrubetz, Michael; Moore, Joel

    Periodically driven systems have received renewed interest due to their capacity to engineer non-trivial effective Hamiltonians. A characteristic of such systems is how they respond to weak periodicity-breaking drive, as for example when a laser is pulsed instead of continuous wave. We develop semi-classical equations of motion of a wave packet in the presence of electric and magnetic fields which are turned on non-adiabatically. We then show the emergence of significant corrections to electronic collective excitations and optical responses of topological insulator surface states, Weyl metals and semiconductor mono-chalcogenides.

  7. Progress toward traceable nanoscale optical critical dimension metrology for semiconductors

    NASA Astrophysics Data System (ADS)

    Patrick, Heather J.; Germer, Thomas A.

    2007-09-01

    Non-imaging optical critical dimension (OCD) techniques have rapidly become a preferred method for measuring nanoscale features in semiconductors. OCD relies upon the measurement of an optical reflectance signature from a grating target as a function of angle, wavelength and/or polarization. By comparing the signature with theoretical simulations, parameters of the grating lines such as critical dimension (CD) linewidth, sidewall angle, and line height can be obtained. Although the method is sensitive and highly repeatable, there are many issues to be addressed before OCD can be considered a traceable metrology. We report on progress towards accurate, traceable measurement, modeling, and analysis of OCD signatures collected on the NIST goniometric optical scatter instrument (GOSI), focusing on recent results from grating targets fabricated using the single-crystal critical dimension reference materials (SCCDRM) process. While we demonstrate good correlation between linewidth extracted from OCD and that measured by scanning electron microscopy (SEM), we also find systematic deviations between the experimentally obtained optical signatures and best fit theoretical signatures that limit our ability to determine uncertainty in OCD linewidth. We then use the SCCDRM line profile model and a χ2 goodness-of-fit analysis on simulated signatures to demonstrate the theoretical confidence limits for the grating line parameters in the case of normally distributed noise. This analysis shows that for the current SCCDRM implementation, line height and oxide layer undercut are highly correlated parameters, and that the 3-σ confidence limits in extracted linewidth depend on the target pitch. Prospects for traceable OCD metrology will be discussed.

  8. High speed all-optical encryption and decryption using quantum dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Li, Wenbo; Hu, Hongyu; Dutta, Niloy K.

    2013-11-01

    A scheme to realize high speed all-optical encryption and decryption using key-stream generators and an XOR gate based on quantum dot semiconductor optical amplifiers (QD-SOAs) was studied. The key used for encryption and decryption is a high speed all-optical pseudorandom bit sequence (PRBS) which is generated by a linear feedback shift register (LFSR) composed of QD-SOA-based logic XOR and AND gates. Two other kinds of more secure key-stream generators, i.e. cascaded design and parallel design, were also designed and investigated. Nonlinear dynamics including carrier heating and spectral hole-burning in the QD-SOA are taken into account together with the rate equations in order to realize all-optical logic operations. Results show that this scheme can realize all-optical encryption and decryption by using key-stream generators at high speed (~250 Gb/s).

  9. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  10. Implantable micro-optical semiconductor devices for optical theranostics in deep tissue

    NASA Astrophysics Data System (ADS)

    Takehara, Hiroaki; Katsuragi, Yuji; Ohta, Yasumi; Motoyama, Mayumi; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2016-04-01

    Optical therapy and diagnostics using photoactivatable molecular tools are promising approaches in medical applications; however, a method for the delivery of light deep inside biological tissues remains a challenge. Here, we present a method of illumination and detection of light using implantable micro-optical semiconductor devices. Unlike in conventional transdermal light delivery methods using low-energy light (>620 nm or near-infrared light), in our method, high-energy light (470 nm) can also be used for illumination. Implanted submillimeter-sized light-emitting diodes were found to provide sufficient illumination (0.6-4.1 mW/cm2), and a complementary metal-oxide-semiconductor image sensor enabled the detection of fluorescence signals.

  11. High speed all-optical data processing in fast semiconductor and optical fiber based devices

    NASA Astrophysics Data System (ADS)

    Sun, Hongzhi

    Future generations of communication systems demand ultra high speed data processing and switching components. Conventional electrical parts have reached their bottleneck both speed-wise and efficiency-wise. The idea of manipulating high speed data in optical domain is gaining more popularity. In this PhD thesis work, we proposed and demonstrated various schemes of all-optical Boolean logic gate at data rate as high as 80Gb/s by using semiconductor optical amplifier (SOA), SOA Mach-Zehnder interferometer (SOA-MZI), highly nonlinear fiber (HNLF) and optical fiber based components. With the invention of quantum dot (QD) based semiconductor devices, speed limit of all optical data processing has a chance to boost up to 250Gb/s. We proposed and simulated QD-SOA based Boolean functions, and their application such as shift register and pseudorandom bit sequence generation (PRBS). Clock and data recovery of high speed data signals has been simulated and demonstrated by injection lock and phase lock loop techniques in a fiber and SOA ring and an optical-electrical (OE) feedback loop.

  12. Optical Nonlinearities in Semiconductor Doped Glass Channel Waveguides.

    NASA Astrophysics Data System (ADS)

    Banyai, William Charles

    The nonlinear optical properties of a semiconductor -doped glass (SDG) channel waveguide were measured on a picosecond time-scale; namely, fluence-dependent changes in the absorption and the refractive index as well as the relaxation time of the nonlinearity. Slower, thermally -induced changes in the refractive index were also observed. The saturation of the changes in the absorption and the refractive index with increasing optical fluence is explained using a plasma model with bandfilling as the dominant mechanism. The fast relaxation time of the excited electron-hole plasma (20 ps) is explained using a surface-state recombination model. A figure of merit for a nonlinear directional coupler fabricated in a material with a saturable nonlinear refractive index is presented. The measured nonlinear change in the refractive index of the SDG saturates below the value required to effect fluence-dependent switching in a nonlinear directional coupler. Experiments with a channel-waveguide directional coupler support this prediction. However, absorption switching due to differential saturation of the absorption in the two arms of the directional coupler was observed.

  13. Dissipation-Induced Symmetry Breaking in a Driven Optical Lattice

    SciTech Connect

    Gommers, R.; Bergamini, S.; Renzoni, F.

    2005-08-12

    We analyze the atomic dynamics in an ac driven periodic optical potential which is symmetric in both time and space. We experimentally demonstrate that in the presence of dissipation the symmetry is broken, and a current of atoms through the optical lattice is generated as a result.

  14. Growth, structure, and optical characterization of diluted magnetic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Cooley, Benjamin Joseph

    Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new field of research that seeks to exploit electron spin within electronic and opto-electronic semiconductor devices. While much of the effort within semiconductor spintronics has been directed toward fundamental studies and applications of 3D, 2D and 0D systems, there has been little work to date on 1D systems. The distinctive change in the electronic density of states with changing dimensionality provides a strong motivation for developing and exploring semiconductor nanowires in which one might be able to probe and control spin-dependent phenomena within a 1D or quasi-1D environment. This thesis explores the crystal growth, structural properties and magneto-optical behavior of quasi-1D semiconductor nanowires in which we incorporate magnetism through two approaches: first, by synthesizing nanowires of the diluted magnetic semiconductor (Zn,Mn)Se, wherein the d-shell electrons of substitutional Mn ions interact with the band states of the ZnSe host lattice via sp--d exchange; second, by making hybrid core-shell nanostructures wherein a metallic ferromagnetic shell (MnAs) is epitaxially deposited on a semiconductor nanowire (GaAs). After an introductory overview of past work in the field and a description of the experimental techniques relevant to the thesis, we discuss our experimental results. The first set of experiments focuses on ZnSe and (Zn,Mn)Se nanowires grown in a single stage. The nanowires were grown on Si and GaAs substrates with a thin layer of gold evaporated onto them, which were then annealed before growth so that the gold formed nanoscale droplets. The growth yields samples covered in random arrays of nanowires growing out an an angle to the substrate, with an undergrowth of crooked nanowires and other small structures. The long thin nanowires vary in diameter, down to

  15. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  16. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    DOEpatents

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  17. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  18. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGESBeta

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  19. Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films.

    PubMed

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-03-01

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. Charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques. PMID:26836282

  20. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Abe, Katsumi; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2012-08-01

    We fabricated transparent amorphous oxide semiconductor superlattices composed of In-Ga-Zn-O (a-IGZO) well layers and Ga2O3 (a-Ga2O3) barrier layers, and investigated their optical absorption properties to examine energy quantization in the a-IGZO well layer. The Tauc gap of a-IGZO well layers monotonically increases with decreasing well thickness at ≤5 nm. The thickness dependence of the Tauc gap is quantitatively explained by a Krönig-Penny model employing a conduction band offset of 1.2 eV between the a-IGZO and the a-Ga2O3, and the effective masses of 0.35m0 for the a-IGZO well layer and 0.5m0 for the a-Ga2O3 barrier layer, where m0 is the electron rest mass. This result demonstrates the quantization in the a-IGZO well layer. The phase relaxation length of the a-IGZO is estimated to be larger than 3.5 nm.

  1. Cell Signaling Experiments Driven by Optical Manipulation

    PubMed Central

    Difato, Francesco; Pinato, Giulietta; Cojoc, Dan

    2013-01-01

    Cell signaling involves complex transduction mechanisms in which information released by nearby cells or extracellular cues are transmitted to the cell, regulating fundamental cellular activities. Understanding such mechanisms requires cell stimulation with precise control of low numbers of active molecules at high spatial and temporal resolution under physiological conditions. Optical manipulation techniques, such as optical tweezing, mechanical stress probing or nano-ablation, allow handling of probes and sub-cellular elements with nanometric and millisecond resolution. PicoNewton forces, such as those involved in cell motility or intracellular activity, can be measured with femtoNewton sensitivity while controlling the biochemical environment. Recent technical achievements in optical manipulation have new potentials, such as exploring the actions of individual molecules within living cells. Here, we review the progress in optical manipulation techniques for single-cell experiments, with a focus on force probing, cell mechanical stimulation and the local delivery of active molecules using optically manipulated micro-vectors and laser dissection. PMID:23698758

  2. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  3. Laser-driven polyplanar optic display

    SciTech Connect

    Veligdan, J.T.; Biscardi, C.; Brewster, C.; DeSanto, L.; Beiser, L.

    1998-01-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. This display screen is 2 inches thick and has a matte-black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. The new display uses a 200 milliwatt green solid-state laser (532 nm) as its optical source. In order to produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP) chip manufactured by Texas Instruments, Inc. A variable astigmatic focusing system is used to produce a stigmatic image on the viewing face of the POD. In addition to the optical design, the authors discuss the DLP chip, the optomechanical design and viewing angle characteristics.

  4. Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface.

    PubMed

    Monahan, Nicholas R; Williams, Kristopher W; Kumar, Bharat; Nuckolls, Colin; Zhu, X-Y

    2015-06-19

    How an electron-hole pair escapes the Coulomb potential at a donor-acceptor interface has been a key issue in organic photovoltaic research. Recent evidence suggests that long-distance charge separation can occur on ultrafast time scales, yet the underlying mechanism remains unclear. Here we use charge transfer excitons (CTEs) across an organic semiconductor-vacuum interface as a model and show that nascent hot CTEs can spontaneously climb up the Coulomb potential within 100 fs. This process is driven by entropic gain due to the rapid rise in density of states with increasing electron-hole separation. In contrast, the lowest CTE cannot delocalize, but undergoes self-trapping and recombination. PMID:26196998

  5. Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

    NASA Astrophysics Data System (ADS)

    Monahan, Nicholas R.; Williams, Kristopher W.; Kumar, Bharat; Nuckolls, Colin; Zhu, X.-Y.

    2015-06-01

    How an electron-hole pair escapes the Coulomb potential at a donor-acceptor interface has been a key issue in organic photovoltaic research. Recent evidence suggests that long-distance charge separation can occur on ultrafast time scales, yet the underlying mechanism remains unclear. Here we use charge transfer excitons (CTEs) across an organic semiconductor-vacuum interface as a model and show that nascent hot CTEs can spontaneously climb up the Coulomb potential within 100 fs. This process is driven by entropic gain due to the rapid rise in density of states with increasing electron-hole separation. In contrast, the lowest CTE cannot delocalize, but undergoes self-trapping and recombination.

  6. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    SciTech Connect

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-12-31

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process.

  7. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  8. Optically driven bacterial screw of Archimedes

    NASA Astrophysics Data System (ADS)

    Robbins, J. R.; Tierney, D. A.; Schmitzer, H.

    2006-01-01

    The linear momentum transfer from photons to asymmetrically shaped structures generates an optomechanical rotation, but these micron-sized structures require costly, high-precision fabrication. Nature, however, provides a great diversity of engineered forms and dead, but rigid, asymmetrically shaped bacteria can provide a low cost alternative. In this work, we show that helical bacteria rotate very quickly in optical tweezers. Their rotation is fast enough to create a strong whirl, such that they may act as micropumps in thin capillaries.

  9. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  10. Optically monostable operation of a monolithic semiconductor ring laser using external optical injections

    NASA Astrophysics Data System (ADS)

    Wang, Zhuoran; Yuan, Guohui; Yu, Siyuan; Giuliani, Guido; Furst, Sandor; Sorel, Marc

    2007-11-01

    The semiconductor ring laser (SRL) is attracting more and more interest as a potential all-optical logic device. Whilst previous operations used electrical modulation to induce switching, for all-optical applications such as all optical switching, regeneration, and optical memory it is necessary to switch using an external optical signal. When operated as a monostable way at 110 mA (just above the threshold of 80 mA) where the device operates in the bidirectional regime, SRL should also be dynamically forced to work in clockwise (CW) and anticlockwise (CCW) directions depending on the external injection direction. In this paper the response characteristics of SRL to external optical injection which fed into SRL by CCW direction are investigated. Both output directions have highly nonlinear relationship with injection signal power and their responses are highly digital. This operation is also simulated in both directions and the agreement with experiment is very good apart from the injection power scale. This confirms that the SRL power is constant above a certain injection power level in both on and off directions, which can be further verified by future devices with 2 couplers.

  11. Optoelectronic device simulation: Optical modeling for semiconductor optical amplifiers and solid state lighting

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Xue (Michael)

    2006-07-01

    Recent advances in optoelectronic devices require sophisticated optical simulation and modeling. These tiny semiconductor device structures, such as semiconductor lasers and light emitting diodes (LED), not only need detailed electrical computation, such as band structure, carrier transportation, and electron-hole recombination under different external voltages, but also require comprehensive optical modeling, such as photon generation and propagation. Optical modeling also includes waveguide structure calculations, guided mode and leakage mode identification, as well far-field pattern prediction using optical ray tracing. In modeling semiconductor lasers, light emission and propagation can be treated using the single mode of wave optics, the so-called photon propagation equation coupled with carrier transport equations. These differential equations can be numerically solved using the Finite Difference Method (FDM). In the LED modeling, the main tools are based on optical ray tracing, and photons are treated as light emissions with random directions and polarizations. Optical waveguide theory is used to qualitatively analyze photon emissions inside a LED chip, and helps to design the LED device structure. One important area of semiconductor laser modeling is the optical simulation of the wavelength converter based on semiconductor optical amplifiers (SOA). This wavelength converter is a critical device in optical communication, and it can copy information from one wavelength to anther through cross-gain modulation. Some numerical methods have been developed to model the wavelength conversion. In these methods, solutions are found by solving differential equations in the time domain using FDM. In all previous models, the waveguide internal loss is assumed uniform across the cavity of the SOA, or the gain coefficient is based on the polynomial approximation method, i.e., the gain coefficient is assumed proportional to the difference between the carrier and

  12. Tunable optical delay via carrier induced exciton dephasing in semiconductor quantum wells.

    PubMed

    Sarkar, Susanta; Guo, Yan; Wang, Hailin

    2006-04-01

    We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam. PMID:19516421

  13. Optically driven quantum dots as source of coherent cavity phonons: a proposal for a phonon laser scheme.

    PubMed

    Kabuss, Julia; Carmele, Alexander; Brandes, Tobias; Knorr, Andreas

    2012-08-01

    We present a microscopically based scheme for the generation of coherent cavity phonons (phonon laser) by an optically driven semiconductor quantum dot coupled to a THz acoustic nanocavity. External laser pump light on an anti-Stokes resonance creates an effective Lambda system within a two-level dot that leads to coherent phonon statistics. We use an inductive equation of motion method to estimate a realistic parameter range for an experimental realization of such phonon lasers. This scheme for the creation of nonequilibrium phonons is robust with respect to radiative and phononic damping and only requires optical Rabi frequencies of the order of the electron-phonon coupling strength. PMID:23006175

  14. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  15. All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-05-01

    Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

  16. Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

    NASA Astrophysics Data System (ADS)

    Persano Adorno, Dominique; Pizzolato, Nicola; Fazio, Claudio

    2015-09-01

    Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

  17. Plasmon-optical phonon hybridization in polar semiconductor nano-wires

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2013-12-01

    The hybridization of the plasmon oscillations with the optical phonon waves in cylindrical polar semiconductor nano-wires is investigated. A simple model based on the hydrodynamic theory in conjunction with the Poisson's equation is proposed. An explicit form of the dispersion relation for hybridized surface plasmon-optical phonon modes of the system is derived.

  18. Formation and all-optical control of optical patterns in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Binder, R.; Tsang, C. Y.; Tse, Y. C.; Luk, M. H.; Kwong, N. H.; Chan, Chris K. P.; Leung, P. T.; Lewandowski, P.; Schumacher, Stefan; Lafont, O.; Baudin, E.; Tignon, J.

    2016-05-01

    Semiconductor microcavities offer a unique way to combine transient all-optical manipulation of GaAs quantum wells with the benefits of structural advantages of microcavities. In these systems, exciton-polaritons have dispersion relations with very small effective masses. This has enabled prominent effects, for example polaritonic Bose condensation, but it can also be exploited for the design of all-optical communication devices. The latter involves non-equilibrium phase transitions in the spatial arrangement of exciton-polaritons. We consider the case of optical pumping with normal incidence, yielding a spatially homogeneous distribution of exciton-polaritons in optical cavities containing the quantum wells. Exciton-exciton interactions can trigger instabilities if certain threshold behavior requirements are met. Such instabilities can lead, for example, to the spontaneous formation of hexagonal polariton lattices (corresponding to six-spot patterns in the far field), or to rolls (corresponding to two-spot far field patterns). The competition among these patterns can be controlled to a certain degree by applying control beams. In this paper, we summarize the theory of pattern formation and election in microcavities and illustrate the switching between patterns via simulation results.

  19. Time-resolved chirp properties of semiconductor optical amplifiers in high-speed all-optical switches

    NASA Astrophysics Data System (ADS)

    Chen, Ligong; Lu, Rongguo; Zhang, Shangjian; Li, Jianfeng; Liu, Yong

    2013-03-01

    The chirp properties of semiconductor optical amplifiers in all-optical switches are numerically investigated using a field propagation model. The chirp dynamics in the blue-shift and red-shift sideband are analyzed under the injection of random optical pump pulses. We also analyze the impact of the blue-detuned filtering scheme that is used to eliminate the pattern effect and enhance the operating speed of the optical switching. The reason for overshoots in eye diagrams in the blue-detuned filtering scheme is explained. We find that overshoots result from the ultrafast blue chirp induced by carrier heating and two-phonon absorption. These results are very useful for semiconductor optical amplifier-based ultrafast all-optical signal processing.

  20. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  1. Wide Tuning Range Wavelength-Swept Laser With Two Semiconductor Optical Amplifiers

    PubMed Central

    Oh, W. Y.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2010-01-01

    We demonstrate a wide tuning range high-speed wavelength-swept semiconductor laser based on a polygon scanning filter that is common to two laser cavities. Linear wavelength tuning was achieved over 145 nm around 1310 nm at a tuning repetition rate of 20 kHz. The wavelength tuning filter is expandable to accommodate multiple semiconductor optical amplifiers for further widening of the laser wavelength tuning range. PMID:20651947

  2. Carbon nanotube mode-locked optically-pumped semiconductor disk laser.

    PubMed

    Seger, K; Meiser, N; Choi, S Y; Jung, B H; Yeom, D-I; Rotermund, F; Okhotnikov, O; Laurell, F; Pasiskevicius, V

    2013-07-29

    An optically pumped semiconductor disk laser was mode-locked for the first time by employing a single-walled carbon nanotube saturable absorber. Stable passive fundamental mode-locking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm. PMID:23938653

  3. Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer.

    PubMed

    Gao, Weiwei; Dos Reis, Roberto; Schelhas, Laura T; Pool, Vanessa L; Toney, Michael F; Yu, Kin Man; Walukiewicz, Wladek

    2016-08-10

    Composites are a class of materials that are formed by mixing two or more components. These materials often have new functional properties compared to their constituent materials. Traditionally composites are formed by self-assembly due to structural dissimilarities or by engineering different layers or structures in the material. Here we report the synthesis of a uniform and stoichiometric composite of CdO and SnTe with a novel nanocomposite structure stabilized by the dissimilarity of the electronic band structure of the constituent materials. The composite has interesting electronic properties which range from highly n-type in CdO to semi-insulating in the intermediate composition range to highly p-type in SnTe. This can be explained by the overlap of the conduction and valence band of the constituent compounds. Ultimately, our work identifies a new class of composite semiconductors in which nanoscale self-organization is driven and stabilized by charge transfer between constituent materials. PMID:27459505

  4. Distributed fibre optic strain measurements on a driven pile

    NASA Astrophysics Data System (ADS)

    Woschitz, Helmut; Monsberger, Christoph; Hayden, Martin

    2016-05-01

    In civil engineering pile systems are used in unstable areas as a foundation of buildings or other structures. Among other parameters, the load capacity of the piles depends on their length. A better understanding of the mechanism of load-transfer to the soil would allow selective optimisation of the system. Thereby, the strain variations along the loaded pile are of major interest. In this paper, we report about a field trial using an optical backscatter reflectometer for distributed fibre-optic strain measurements along a driven pile. The most significant results gathered in a field trial with artificial pile loadings are presented. Calibration results show the performance of the fibre-optic system with variations in the strain-optic coefficient.

  5. An analytical study on bistability of Fabry Perot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Chen, Shuqiang; Yang, Huajun

    2016-06-01

    Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams's relationship between the incident optical intensity I in and the z-independent average intracavity intensity I av, an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.

  6. Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2011-08-01

    A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

  7. Flexible quadrature amplitude modulation with semiconductor optical amplifier and electroabsorption modulator.

    PubMed

    Schrenk, Bernhard; Dris, Stefanos; Bakopoulos, Paraskevas; Lazarou, Ioannis; Voigt, Karsten; Zimmermann, Lars; Avramopoulos, Hercules

    2012-08-01

    Optical quadrature amplitude modulation (QAM) is experimentally demonstrated with a low-complexity modulator based on a semiconductor optical amplifier and electroabsorption modulator. Flexible amplitude/phase format transmission is achieved. The applicability of octary QAM for coherent optical access networks with sustainable 3 Gb/s per-user bandwidth is investigated for a long reach of 100 km, and its compatibility with a potentially high split is verified. PMID:22859139

  8. Monolithic semiconductor mid-IR optical parametric oscillators with modal phase matching

    NASA Astrophysics Data System (ADS)

    Lammert, R. M.; Oh, S. W.; Osowski, M. L.; Panja, C.; Rudy, P. T.; Stakelon, T.; Ungar, J. E.

    2006-05-01

    We present theoretical analysis and experimental data from a monolithic semiconductor laser and optical parametric oscillator device which generates near-infrared laser beam and converts it to a longer mid-infrared wavelength by modal phase matching. The device design exploits the strong optical nonlinearity and transparency of III-V compound semiconductors while achieving phase matching of the near-infrared pump beam to the mid-infrared product beam(s). These devices have the potential to dramatically improve the CW Mid-IR power available at room temperature from monolithic semiconductor lasers, making them ideal for a broad range of applications including infrared countermeasures, detecting chemical weapons, imaging, and fog-penetrating optical communications.

  9. Size limitations and gain optimization in semiconductor-optical-amplifier-based optical space switches

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Huang, Dexiu; Liu, Deming

    2002-08-01

    The cascadability of Semiconductor optical amplifier (SOA) gates and the size limitations for several kinds of switch architectures based on SOA's are studied theoretically. The analysis shows that the sizes of matrix-vector switches are severely limited owing to the splitting losses, waveguide losses and coupling losses. However for distributed gain matrix-vector switch and Benes switch, the accumulation of amplified spontaneous emission (ASE) noise and non-ideal extinction ratio also greatly influence the maximal sizes of switches. The calculation results also reveal that the gain optimum strategy for switches based on SOA's, which derived from steady state analysis, will not be optimum when non-ideal extinction ratio and dynamical gain saturation is considered

  10. Optical characterization of wide-gap detector-grade semiconductors

    NASA Astrophysics Data System (ADS)

    Elshazly, Ezzat S.

    Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a

  11. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  12. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  13. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  14. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  15. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  16. Large optical power margin of signal light in OFDR-OCT by using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Asaka, Kota

    2008-02-01

    We demonstrate a sensitivity improvement in an optical frequency domain reflectometry-optical coherence tomography (OFDR-OCT) system with a discretely swept light source by incorporating a semiconductor optical amplifier (SOA) in a sample arm. With the system, we achieve a high sensitivity of -134.4 dB when we measure the reflective mirror with an A-line rate of 0.25 kHz. This improves the sensitivity (-125.2 dB) by 9.2 dB compared with a system without the SOA. The OCT system without the SOA shows a signal-to-noise ratio (SNR) of 56 dB when the signal light power is attenuated by about 66 dB, and the SNRs of less than 56 dB are obtained at higher attenuation levels. However, an SOA-incorporated OCT system provides the SNR of 56 dB at the much higher attenuation level of 86 dB. This means that using the SOA offers the large signal light power margin of 20 dB needed to obtain SNR of 56 dB. It is shown that the power margin is qualitatively dependent on the optical gain of the SOA. From an experimental analysis of the noises in the SOA-incorporated system, we found that the sensitivity enhancement is mainly limited by the beat noise between the reference light and the amplified spontaneous emission (ASE) of the SOA. We obtained images that show clear cluster structures of enamel crystals near the dentin-enamel junction of an extracted human tooth with our SOA-incorporated discretely swept OFDR-OCT imaging, revealing the potential to achieve a high-speed OCT system with high sensitivity.

  17. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication. PMID:21369207

  18. Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

  19. All-optical format conversion using a periodically poled lithium niobate waveguide and a reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Sun, Junqiang; Sun, Qizhen; Wang, Dalin; Zhou, Minjuan; Zhang, Xinliang; Huang, Dexiu; Fejer, M. M.

    2007-07-01

    In the present letter, the authors report on the realization of all-optical format conversion by using the cascaded sum- and difference-frequency generation in a periodically poled lithium niobate waveguide and the active mode locking in a reflective-semiconductor-optical-amplifier-based fiber ring laser. Tunable format conversions from nonreturn-to-zero pseudorandom binary sequence (PRBS) signal to return-to-zero PRBS idler at 10 and 20Gbit/s are observed in the experiment.

  20. Analytical models of optical response in one-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Pedersen, Thomas Garm

    2015-09-01

    The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron-hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed.

  1. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  2. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  3. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, M. C.; Muggli, Patric; Yakimenko, Vitaly; Babzien, Marcus; Kusche, Karl; Fedurin, Mikhail

    2010-11-01

    Beam-driven plasma wakefield accelerators (PWFA), such as the ``plasma afterburner,'' are a promising approach for significantly increasing the particle energies of conventional accelerators. The study and optimization of PWFA would benefit from an experimental correlation between the parameters of the drive bunch, the accelerated bunch and the corresponding, accelerating plasma wave structure. However, the plasma wave structure has not yet been observed directly in PWFA. We will report our current work on noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) visualization of beam-driven plasma waves. Both techniques employ two laser pulses (probe and reference) co-propagating with the particle drive-beam and its plasma wake. The reference pulse precedes the drive bunch, while the probe overlaps the plasma wave and maps its longitudinal and transverse structure. The experiment is being developed at the BNL/ATF Linac to visualize wakes generated by two and multi-bunch drive beams.

  4. The dynamics of radiation-driven, optically thick winds

    NASA Astrophysics Data System (ADS)

    Shen, Rong-Feng; Nakar, Ehud; Piran, Tsvi

    2016-06-01

    Recent observation of some luminous transient sources with low colour temperatures suggests that the emission is dominated by optically thick winds driven by super-Eddington accretion. We present a general analytical theory of the dynamics of radiation pressure-driven, optically thick winds. Unlike the classical adiabatic stellar wind solution whose dynamics are solely determined by the sonic radius, here the loss of the radiation pressure due to photon diffusion also plays an important role. We identify two high mass-loss rate regimes (dot{M} > L_Edd/c^2). In the large total luminosity regime, the solution resembles an adiabatic wind solution. Both the radiative luminosity, L, and the kinetic luminosity, Lk, are super-Eddington with L < Lk and L ∝ L_k^{1/3}. In the lower total luminosity regime, most of the energy is carried out by the radiation with Lk < L ≈ LEdd. In a third, low mass-loss regime (dot{M} < L_Edd/c^2), the wind becomes optically thin early on and, unless gas pressure is important at this stage, the solution is very different from the adiabatic one. The results are independent from the energy generation mechanism at the foot of the wind; therefore, they are applicable to a wide range of mass ejection systems, from black hole accretion, to planetary nebulae, and to classical novae.

  5. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    SciTech Connect

    Dersch, H.; Amer, N.M.

    1984-08-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented.

  6. Critical slowing down and critical exponents in LD/PIN optically-bistable semiconductor lasers

    SciTech Connect

    Zhong Lichen; Guo Yili

    1988-04-01

    Critical slowing down for LD/PIN bistable optical semiconductor lasers and the critical exponents ..gamma.. for this system have been experimentally investigated. The experimental value ..gamma..approx.0.53 is basically in agreement with the theoretically predicted value of 0.5.

  7. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  8. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  9. Chaotic Transport in Semiconductor, Optical, and Cold-Atom Systems

    NASA Astrophysics Data System (ADS)

    Judd, T.; Henning, A.; Hardwick, D.; Scott, R.; Balanov, A.; Wilkinson, P.; Fowler, D.; Martin, A.; Fromhold, T.

    We show that the reflection of quantum-mechanical waves from semiconductor surfaces creates new regimes of nonlinear dynamics, which offer sensitive control of electrons and ultra-cold atoms. For electrons in superlattices, comprising alternating layers of different semiconductor materials, multiple reflections of electron waves from the layer interfaces induce a unique type of chaotic electron motion when a bias voltage and tilted magnetic field are applied. Changing the field parameters switches the chaos on and off abruptly, thus producing a sharp increase in the measured current flow by creating unbounded electron orbits. These orbits correspond to either intricate web patterns or attractors in phase space depending on the electron decoherence rate. We show that related dynamics provide a mechanism for controlling the transmission of electromagnetic waves through spatially-modulated photonic crystals. Finally, we consider the quantum dynamics of a Bose-Einstein condensate, comprising 120,000 rubidium atoms cooled to 10 nK, incident on a stadium billiard etched in a room-temperature silicon surface. Despite the huge temperature difference between the condensate and the billiard, quantum-mechanical reflection can shield the cold atoms from the disruptive influence of the surface, thus enabling the billiard to imprint signatures of single-particle classical trajectories in the collective motion of the reflected atom cloud.

  10. Floquet engineering with quasienergy bands of periodically driven optical lattices

    NASA Astrophysics Data System (ADS)

    Holthaus, Martin

    2016-01-01

    A primer on the Floquet theory of periodically time-dependent quantum systems is provided, and it is shown how to apply this framework for computing the quasienergy band structure governing the dynamics of ultracold atoms in driven optical cosine lattices. Such systems are viewed here as spatially and temporally periodic structures living in an extended Hilbert space, giving rise to spatio-temporal Bloch waves whose dispersion relations can be manipulated at will by exploiting ac-Stark shifts and multiphoton resonances. The elements required for numerical calculations are introduced in a tutorial manner, and some example calculations are discussed in detail, thereby illustrating future prospects of Floquet engineering.

  11. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  12. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  13. Phase solitons and domain dynamics in an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gustave, F.; Columbo, L.; Tissoni, G.; Brambilla, M.; Prati, F.; Barland, S.

    2016-06-01

    We analyze experimentally and theoretically the spatiotemporal dynamics of a highly multimode semiconductor laser with coherent optical injection. Due to the particular geometry of the device (a 1-m-long ring cavity), the multimode dynamics can be resolved in real time and we observe stable chiral solitons and domain dynamics. The experiment is analyzed in the framework of a set of effective semiconductor Maxwell-Bloch equations. We analyze the stability of stationary solutions and simulate both the complete model and a reduced rate equation model. This allows us to predict domain shrinking and the stability of only one chiral charge that we ascribe to the finite active medium response time.

  14. Wet-Chemically Synthesized Colloidal Semiconductor Nanostructures as Optical Gain Media.

    PubMed

    Ong, Xuanwei; Zhi, Min; Gupta, Shashank; Chan, Yinthai

    2016-03-01

    An overview on the development of wet-chemically synthesized semiconductor nanostructures as optical gain materials is presented in this Review, beginning with the first demonstration of amplified spontaneous emission in zero-dimensional quantum dots and evolving to more sophisticated heterostructures such as one-dimensional core-seeded nanorods, branched core-seeded tetrapods and two-dimensional nanoplatelets. The advantages and challenges of utilizing strongly quantum-confined colloidal semiconductor materials as gain media are discussed, and a concerted effort is made to elaborate on how the progression towards more structurally complex architectures has allowed for dramatic improvements in performance and stability over the archetypal quantum dot. PMID:26822201

  15. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

    PubMed

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  16. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    NASA Astrophysics Data System (ADS)

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-06-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

  17. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  18. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  19. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-01

    Bunch driven plasma wakefield accelerators (PWFA), such as the "plasma afterburner," are a promising emerging method for significantly increasing the energy output of conventional particle accelerators [1]. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) [2] and Holographic (FDH) [3] diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two [4] and multi-bunch [5] drive beams.

  20. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    SciTech Connect

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-04

    Bunch driven plasma wakefield accelerators (PWFA), such as the 'plasma afterburner', are a promising emerging method for significantly increasing the energy output of conventional particle accelerators. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two and multi-bunch drive beams.

  1. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  2. Colloidal particles driven across periodic optical-potential-energy landscapes

    NASA Astrophysics Data System (ADS)

    Juniper, Michael P. N.; Straube, Arthur V.; Aarts, Dirk G. A. L.; Dullens, Roel P. A.

    2016-01-01

    We study the motion of colloidal particles driven by a constant force over a periodic optical potential energy landscape. First, the average particle velocity is found as a function of the driving velocity and the wavelength of the optical potential energy landscape. The relationship between average particle velocity and driving velocity is found to be well described by a theoretical model treating the landscape as sinusoidal, but only at small trap spacings. At larger trap spacings, a nonsinusoidal model for the landscape must be used. Subsequently, the critical velocity required for a particle to move across the landscape is determined as a function of the wavelength of the landscape. Finally, the velocity of a particle driven at a velocity far exceeding the critical driving velocity is examined. Both of these results are again well described by the two theoretical routes for small and large trap spacings, respectively. Brownian motion is found to have a significant effect on the critical driving velocity but a negligible effect when the driving velocity is high.

  3. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  4. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  5. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor

    NASA Astrophysics Data System (ADS)

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-01

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure.

  6. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor.

    PubMed

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-15

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure. PMID:25576934

  7. Fibre-optic thermometer using semiconductor-etalon sensor

    NASA Technical Reports Server (NTRS)

    Beheim, G.

    1986-01-01

    A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.

  8. Miniature semiconductor ring laser sources for integrated optical circuits

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Laybourn, Peter J. R.; Jezierski, Andrzej F.; Krauss, Thomas F.; Webb, P. W.

    1990-08-01

    Miniature semiconductor lasers with resonant ring cavities in both heterostructure and quantum well material have been developed at Glasgow. Two laser structures, rib ring laser and polyimide-embedded ring laser, have been investigated. The resonators produced are between 10 and 1 00im in diameter and because of their small size, the longitudial ,mode spacing is increased over that of conventional cleaved-cavity lasers, reducing the numbers of lasing modes in the mode spectrum. But the small structure will cause thermal problems because of the difficulty of heat dissipation. Detailed thermal measurements have been made on the surface of the laser by an infrared thermal imaging technique. The results give a fair qualitative assessment of the thermal behaviour of a ring laser compared to theoretical modelling results, and show that the temperature rise of the lasing ring is excessive at lasing threshold current for the very small ring and narrow rib structure. Increasing the ring diameter, with a shallower or wider rib structure or even a pill-box structure, will improve heat dissipation and reduce threshold current.

  9. Epitaxial 3-5 semiconductors for integrated electro-optics

    NASA Astrophysics Data System (ADS)

    Anderson, Wayne A.; Beachley, O. T., Jr.; Kwok, H. S.; Liu, P. L.; Wie, C. R.

    1988-06-01

    Research has been conducted on the synthesis and evaluation of new organometallics (OM), growth of epitaxial layers by OMCVD and laser chemical vapor deposition (LCVD), laser interaction with materials, structural and chemical evaluation of epitaxial layers, electrical evaluation of epitaxial layers and radiation effects in semiconductors and insulators. New OM precursors were developed and used in OMCVD. New OM sources are considered for lower toxicity and more efficient reaction. For the first time, InSb was grown in CdTe by OMCVD. A quadrupole mass analyzer and low temperature luminescence were installed for in situ diagnostics. Laser interaction studies reveal the importance of tunneling ionization for carrier generation in low bandgap materials. Ion emission has been measured from a metal surface due to laser irradiation. Ions were observed at low laser fluence and at a frequency corresponding to an energy less than the material work function. Rocking curve studies of MBE-grown strained GaInAs on GaAs is the most reliable technique for strains less than 0.3 percent. LO-TO splitting in ion damaged GaAs has been explained by the effective ionic charge of the ion beam-induced point defects. Deep level transient spectroscopy studies of irradiated p-InP has revealed trap levels and annealing effects of importance in extraterrestrial applications. A Yb/p-InP device has shown good linearity and improved stability as a temperature sensor from 100 to 400K.

  10. Nonlinear optics of Bloch oscillating electrons in semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Ghosh, Avik

    A quantum particle in a periodic potential can exhibit rich dynamics in a driving field. In particular, Bloch oscillation of electrons in a superlattice leads to optical properties that are nonlinear functions of the input fields. In a DC field, we analyze the coupling of Bloch oscillations in a superlattice with plasmons and longitudinal optical (LO) phonons, modelled by a pendulum linearly coupled to an oscillator. In the absence of LO phonons, the pendulum equation predicts a sharp transition from plasma oscillations to Bloch oscillations at a critical density or electric field. Resonant Bloch-phonon coupling enhances the phonon amplitude and generates sidebands, but produces no gap in the Bloch-phonon spectrum. Our predictions qualitatively agree with recent experimental results. Considerably more dramatic is the response of charges to an oscillatory incident field. In an AC field, the resonance between the external frequency and the Bloch oscillation frequency set by the field amplitude makes the optical response a nonlinear function of the field amplitude. At certain discrete values of the AC amplitude the electron is dynamically localized, whereupon the total current density decreases drastically while the power dissipated is maximized. The THz reflection coefficient vanishes at dynamic localization, and thus oscillates with varying AC field amplitude inside the superlattice. At high doping, the nonlinear transformation between the fields inside and outside the superlattice leads furthermore to multistability in the optical properties as a function of the incident field. Similar oscillations and multistability exist for third harmonic power generated by a set of superlattices fabricated into a quasi-optical array. The generated power can be optimized by bringing the harmonics into Fabry-Perot resonance with the substrate. We compare our predictions with recent experimental results for a quasi-optical array. Combining a mixture of DC and AC fields leads to

  11. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  12. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  13. Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering.

    PubMed

    Li, Fangxin; Helmy, Amr S

    2013-11-15

    We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width ~22 KHz is experimentally demonstrated. PMID:24322069

  14. Mueller based scatterometry and optical characterization of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Muthinti, Gangadhara Raja

    Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light. The present work focuses on understanding the Mueller based Scatterometry with respect to other methodologies by a systematic approach. Several laterally complex nano-scale structures with dimensions in the order of nanometers were designed and fabricated using e-beam lithography. Also Mueller based analysis was used to extract profile information and anisotropy coefficients of complex 3D FinFET, SOI fin grating structures. Later, Spectroscopic Mueller matrix (all 16 elements) and SE data were collected in planar diffraction mode for the samples using a J.A. Woollam RC2(TM) Spectroscopic Ellipsometer. Nano

  15. Optical, thermal, and electronic semiconductor properties of thermochromic metal halides

    NASA Astrophysics Data System (ADS)

    Novinson, Thomas; Zink, Jeffrey I.; Kennedy, John; Kaska, William C.

    1990-12-01

    Silver mercury tetraiodide (Ag,HgI ) is a well known thermochromic pigment that changes color from yellow to ornge at 50 C. The compound is also a fast ion conductor above its phase transition temperature. We synthesized a number of analogues of this compound in which the silver was replaced by cadmium, lead, thallium(I), copper(I), indium(I), gold(I), lithium, cesium and rubidium to determine the range of color transitions and the correlation of electrical conductivity with optical and thermal activity. This paper also reports on continued research to assess the possibility of using these pigments in architectural coatings.

  16. Intrinsic optical bistability in a strongly driven Rydberg ensemble

    NASA Astrophysics Data System (ADS)

    de Melo, Natalia R.; Wade, Christopher G.; Šibalić, Nikola; Kondo, Jorge M.; Adams, Charles S.; Weatherill, Kevin J.

    2016-06-01

    We observe and characterize intrinsic optical bistability in a dilute Rydberg vapor. The bistability is characterized by sharp jumps between states of low and high Rydberg occupancy with jump-up and -down positions displaying hysteresis depending on the direction in which the control parameter is changed. We find that the shift in frequency of the jump point scales with the fourth power of the principal quantum number. Also, the width of the hysteresis window increases with increasing principal quantum number, before reaching a peak and then closing again. The experimental results are consistent with predictions from a simple theoretical model based on semiclassical Maxwell-Bloch equations including the effects of interaction-induced broadening and level shifts. These results provide insight into the dynamics of driven dissipative systems.

  17. Laser-driven Sisyphus cooling in an optical dipole trap

    SciTech Connect

    Ivanov, Vladyslav V.; Gupta, Subhadeep

    2011-12-15

    We propose a laser-driven Sisyphus-cooling scheme for atoms confined in a far-off resonance optical dipole trap. Utilizing the differential trap-induced ac Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser preferentially near the trap bottom. After absorption of a cooling photon, the atom loses energy by climbing the steeper potential, and then spontaneously decays preferentially away from the trap bottom. The proposed method is particularly suited to cooling alkaline-earth-metal-like atoms where two-level systems with narrow electronic transitions are present. Numerical simulations for the cases of {sup 88}Sr and {sup 174}Yb demonstrate the expected recoil and Doppler temperature limits. The method requires a relatively small number of scattered photons and can potentially lead to phase-space densities approaching quantum degeneracy in subsecond time scales.

  18. Laser-driven Sisyphus cooling in an optical dipole trap

    NASA Astrophysics Data System (ADS)

    Ivanov, Vladyslav V.; Gupta, Subhadeep

    2011-12-01

    We propose a laser-driven Sisyphus-cooling scheme for atoms confined in a far-off resonance optical dipole trap. Utilizing the differential trap-induced ac Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser preferentially near the trap bottom. After absorption of a cooling photon, the atom loses energy by climbing the steeper potential, and then spontaneously decays preferentially away from the trap bottom. The proposed method is particularly suited to cooling alkaline-earth-metal-like atoms where two-level systems with narrow electronic transitions are present. Numerical simulations for the cases of 88Sr and 174Yb demonstrate the expected recoil and Doppler temperature limits. The method requires a relatively small number of scattered photons and can potentially lead to phase-space densities approaching quantum degeneracy in subsecond time scales.

  19. Optically driven Archimedes micro-screws for micropump application.

    PubMed

    Lin, Chih-Lang; Vitrant, Guy; Bouriau, Michel; Casalegno, Roger; Baldeck, Patrice L

    2011-04-25

    Archimedes micro-screws have been fabricated by three-dimensional two-photon polymerization using a Nd:YAG Q-switched microchip laser at 532nm. Due to their small sizes they can be easily manipulated, and made to rotate using low power optical tweezers. Rotation rates up to 40 Hz are obtained with a laser power of 200 mW, i.e. 0.2 Hz/mW. A photo-driven micropump action in a microfluidic channel is demonstrated with a non-optimized flow rate of 6 pL/min. The optofluidic properties of such type of Archimedes micro-screws are quantitatively described by the conservation of momentum that occurs when the laser photons are reflected on the helical micro-screw surface. PMID:21643076

  20. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. PMID:20195322

  1. Microwave photonic phase shifter based on birefringence effects in a semiconductor optical amplifier.

    PubMed

    Chen, Han; Sun, Mingming; Ding, Yi; Sun, Xiaohan

    2013-09-01

    A continuously tunable microwave photonic (MWP) phase shifter based on birefringence effects in a semiconductor optical amplifier (SOA) is presented and the theoretical fundamentals of the design are explained. This proposed device provides a high efficiency phase-shift tuning range beyond 2π rad by controlling the SOA launch power. A prototype of the MWP phase shifter with a frequency of 10 GHz and 2π rad tuning range is experimentally demonstrated. PMID:23988932

  2. An Adjustable Gain-Clamped Semiconductor Optical Amplifier (AGC-SOA)

    NASA Astrophysics Data System (ADS)

    Michie, C.; Kelly, A. E.; Armstrong, I.; Andonovic, I.; Tombling, C.

    2007-06-01

    The operation of a semiconductor optical amplifier (SOA)-ring laser-based subsystem, with the capability to provide adjustable gain-clamped operation, will be described, and preliminary characterization results will be presented. The device uses two SOAs in a ring-cavity topology: one to amplify the signal and the other to control the gain. This type of subsystem finds applications in packet-based dynamic systems where it may be used for power equalization and linear amplification.

  3. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  4. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  5. Spontaneous locking of optical vortices in coupled semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  6. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    NASA Astrophysics Data System (ADS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.

  7. Optically Encoded Second-Harmonic Generation in Semiconductor Microcrystallite-Doped Glass: Physics and Applications.

    NASA Astrophysics Data System (ADS)

    MacDonald, Robert Lawrence

    Semiconductor microcrystallite-doped glasses (SDG) are presented as a new class of materials for optically encoded second harmonic generation. The encoding and readout behavior of SDG is compared with that observed in homogeneous glass. An encoding model for SDG, based on directional trapping of electrons at the semiconductor-glass interface, is developed and shown to be consistent with the observed behavior and with known properties of SDG. Measured optical erasure rates of the encoded SDG provide evidence for the microscopic details of the encoding, and above bandgap erasure is used to observe charge screening in the semiconductor nanocrystals. Quantum confinement effects are observed in the intensity dependence of the encoding efficiency. Ion -exchanged ridge and channel waveguides in SDG are fabricated and encoded with as little as 2 mW average power. The measured readout wavelength dependence in bulk homogeneous glass is consistent with encoding of a chi ^{(2)} grating having a period slightly shifted from that required for quasi-phasematched second harmonic generation at the encoded wavelength. Multiple wavelength encoding is demonstrated and proposed as a new technique for optical storage and readout of information.

  8. Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-10-01

    We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

  9. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  10. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.