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Sample records for driven semiconductor optical

  1. Optical Spin-Transfer-Torque-Driven Domain-Wall Motion in a Ferromagnetic Semiconductor

    NASA Astrophysics Data System (ADS)

    Ramsay, A. J.; Roy, P. E.; Haigh, J. A.; Otxoa, R. M.; Irvine, A. C.; Janda, T.; Campion, R. P.; Gallagher, B. L.; Wunderlich, J.

    2015-02-01

    We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls.

  2. Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

    PubMed

    Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

    2013-09-01

    We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics. PMID:24103966

  3. Enhanced Infrared Magneto-Optical Response of the Nonmagnetic Semiconductor BiTeI Driven by Bulk Rashba Splitting

    NASA Astrophysics Data System (ADS)

    Demkó, L.; Schober, G. A. H.; Kocsis, V.; Bahramy, M. S.; Murakawa, H.; Lee, J. S.; Kézsmárki, I.; Arita, R.; Nagaosa, N.; Tokura, Y.

    2012-10-01

    We study the magneto-optical (MO) response of the polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being nonmagnetic, the material is found to yield a huge MO activity in the infrared region under moderate magnetic fields (up to 3T). Our first-principles calculations show that the enhanced MO response of BiTeI comes mainly from the intraband transitions between the Rashba-split bulk conduction bands. These transitions connecting electronic states with opposite spin directions become active due to the presence of strong spin-orbit interaction and give rise to distinct features in the MO spectra with a systematic doping dependence. We predict an even more pronounced enhancement in the low-energy MO response and dc Hall effect near the crossing (Dirac) point of the conduction bands.

  4. Compound semiconductor optical waveguide switch

    DOEpatents

    Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

    2003-06-10

    An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

  5. Optical pumping in semiconductors

    NASA Astrophysics Data System (ADS)

    Hermann, C.; Lampel, G.; Safarov, V. I.

    Optical Pumping in Semiconductors (OPS) arises from the transfer of angular momentum from light to the localized states of a semiconductor. Spin polarized electrons are thus excited in the conduction band; their polarization is convenient measured through the circular polarization of photoluminescence. This review gives an insight of the various studies based on OPS. After describing the first OPS experiment, we show that this technique allows the determination of band structure properties, and the optical detection of conduction electron spin resonance. The nuclei are polarized by hyperfine interaction, which permits the optical detection of nuclear resonance. A magnetic field transverse to the direction of light propagation produces an electronic depolarization analogous to the Hanle effect. The electron lifetime and spin relaxation time are measured under steady-state conditions by comparison to their Larmor frequency in this transverse field. By activation to Negative Electron Affinity of a GaAs surface, electrons oriented by OPS can be photoemitted into vacuum, leading to a highly spin-polarized beam : we describe a collision experiment in which such a beam transfers angular momentum to atoms. Le Pompage Optique dans les semiconducteurs (POS) provient du transfert de moment angulaire de la lumière vers les états délocalisés d'un semiconducteur. On excite ainsi dans la bande de conduction des électrons polarisés de spin, dont on mesure commodément la polarisation à partir de la polarisation circulaire de la photoluminescence. Cet article de revue présente un aperçu des différentes études fondées sur le POS. Après avoir décrit la première expérience de POS, nous montrons que par cette technique on peut déterminer des propriétés liées à la structure de bande, et détecter optiquement la résonance de spin des électrons de conduction. Les noyaux sont polarisés grâce au couplage hyperfin qui permet également la détection optique de la r

  6. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  7. Nonlinear optical interactions in semiconductors

    NASA Astrophysics Data System (ADS)

    Salour, M. M.

    1985-12-01

    The optical pumping technique in GaAs has led to the development of a novel and highly sensitive optical temperature sensor. Completed is the experiment on two photon optical pumping in ZnO. An external cavity semiconductor laser involving ZnO as a gain medium was demonstrated under two-photon excitation. This laser should have a major impact on the development of tunable blue-green radiation for submarine communication. Completed is a paper on heat buildup in semiconductor platelets. New lasers are used to explore elementary excitation in optical thin film layers of semiconductors. This has led to the first demonstration of the feasibility of room temperature operation of a tunable coherent source involving multiple quantum well material. Completed is the construction of a simple remote (non-contact) temperature sensor to directly measure heat buildup in semiconductor materials as a result of high power optical laser excitation. Finally, an experiment involving optical frequency mixing to probe electrodynamics in the GaAlAs multiple quantumwell and superlattice structures, utilizing two recently constructed tunabel laser systems,has been successful. Attempts were focused on observing a number of new optical effects including nonlinear absorption and transmission phenomena, enhanced spontaneous and stimulated light scattering processes, etc. The construction of an external cavity semiconductor HgCdTe has been successful.

  8. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  9. Optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Dias, Antonio R.; Chau, Kelvin K.; Goodman, Joseph W.

    1991-12-01

    Fiber-optic switching systems typically exhibit large losses associated with splitting and combining of the optical power, and with excess component losses. These losses increase quickly with switch size. To obtain acceptable signal-to-noise performance through large optical switching, optical amplifiers can be used. In applications requiring optical switching, semiconductor optical amplifiers (SOAs) are preferred over erbium-doped fiber amplifiers due to their fast switching speeds and the possibility of their integration in monolithic structures with passive waveguides and electronics. We present a general analysis of optical switching systems utilizing SOAs. These systems, in which the gain provided by SOAs is distributed throughout the optical system, are referred to as distributed optical gain (DOG) systems. Our model predicts the performance and achievable sizes of switches based on the matrix-vector multiplier crossbar and Benes network. It is found that for realistic SOA parameters optical switches accommodating extremely large numbers of nodes are, in principle, achievable.

  10. Optical conductivity for liquid semiconductors

    NASA Astrophysics Data System (ADS)

    Jain, Manish; Ko, Eunjung; Derby, J. J.; Chelikowsky, James

    2002-03-01

    We present calculations for the optical conductivity of several semiconductor liquids: SiGe, GaAs, CdTe, and ZnTe. We perform ab initio molecular dynamics for these liquids. The required interatomic forces are determined using the pseudopotential density functional method. We determine the optical conductivity by considering ensemble averages of the liquid state within the Kubo-Greenwood formalism. In the liquid phase, CdTe and ZnTe exhibit properties that are different from III-V and group IV semiconductors. CdTe and ZnTe remain semiconducting unlike SiGe and GaAs, which are metallic in the melt. These differences in optical conductivities are explained in terms of differences in the microstructure of the liquids. We also verify an empirical rule by Joffe and Regel. Their rule predicts the liquid will remain semiconducting if the short range order of the melt resembles that of the crystalline phase.

  11. Optic probe for semiconductor characterization

    DOEpatents

    Sopori, Bhushan L.; Hambarian, Artak

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  12. Electrically driven optical antennas

    NASA Astrophysics Data System (ADS)

    Kern, Johannes; Kullock, René; Prangsma, Jord; Emmerling, Monika; Kamp, Martin; Hecht, Bert

    2015-09-01

    Unlike radiowave antennas, so far optical nanoantennas cannot be fed by electrical generators. Instead, they are driven by light or indirectly via excited discrete states in active materials in their vicinity. Here we demonstrate the direct electrical driving of an in-plane optical antenna by the broadband quantum-shot noise of electrons tunnelling across its feed gap. The spectrum of the emitted photons is determined by the antenna geometry and can be tuned via the applied voltage. Moreover, the direction and polarization of the light emission are controlled by the antenna resonance, which also improves the external quantum efficiency by up to two orders of magnitude. The one-material planar design offers facile integration of electrical and optical circuits and thus represents a new paradigm for interfacing electrons and photons at the nanometre scale, for example for on-chip wireless communication and highly configurable electrically driven subwavelength photon sources.

  13. Optical Properties of Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gaponenko, S. V.

    1998-10-01

    Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum dots, exhibit fascinating behavior and have a multitude of potential applications, especially in the field of communications. This book examines in detail the optical properties of these structures, gives full coverage of theoretical and experimental results, and discusses their technological applications. The author begins by setting out the basic physics of electron states in crystals (adopting a "cluster-to-crystal" approach), and goes on to discuss the growth of nanocrystals, absorption and emission of light by nanocrystals, optical nonlinearities, interface effects, and photonic crystals. He illustrates the physical principles with references to actual devices such as novel light-emitters and optical switches. The book covers a rapidly developing, interdisciplinary field. It will be of great interest to graduate students of photonics or microelectronics, and to researchers in electrical engineering, physics, chemistry, and materials science.

  14. Optical processors using semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Ma, S.; Li, W.; Hu, H.; Dutta, N. K.

    2012-05-01

    Semiconductor optical amplifiers are important for wide range of applications in optical networks, optical tomography and optical logic systems. For many of these applications particularly for optical networks and optical logic, high speed performance of the SOA is important. All optical Boolean operations such as XOR, OR, AND and NOR has been demonstrated using SOA based Mach-Zhender interferometers (SOA-MZI). A rate equation model for SOA-MZI has been developed. The model has been used to analyze the Set-Reset (S-R) latch, the gated S-R latch and the D-Flip-Flop devices. The modeling results suggest that the Flip-Flop circuits should work at high speeds. An optical pseudo-random bit stream (PRBS) generator is important for all-optical encryption circuits. A model of a PRBS generator using SOAMZI based devices has been developed. We show that a PRBS generator can work @ 80 Gb/s using regular SOAs and @ ~ 250 Gb/s or at higher speeds using two-photon absorption based processes in SOAs.

  15. Optical Properties of Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2006-03-01

    Ferromagnetic semiconductors hold great promise for numerous magneto-optics applications. In this talk I detail recent optical spectroscopic studies of as grown and annealed thin films and digitally doped superlattices of Ga1-xMnxAs, prepared in the group of D.D. Awschalom (UCSB) and annealed in the group of N.Samarth (PSU). Annealing induces a large strengthening of the optical conductivity (σ1(φ)), while the frequency dependence of σ1(φ) remains unchanged. This indicates that the scattering rate and Fermi level have not been effected by annealing, despite the large increase in hole density. Our Infrared work on Digital Ferromagnetic Heterostructures reveals a unique ability to tune their optical properties as well as their intrinsic electronic structure without changing the doping/defect level. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, and N. Samarth (Pennsylvania State University).

  16. Optical cavity furnace for semiconductor wafer processing

    DOEpatents

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  17. Optical Absorption in Liquid Semiconductors

    NASA Astrophysics Data System (ADS)

    Bell, Florian Gene

    An infrared absorption cell has been developed which is suitable for high temperature liquids which have absorptions in the range .1-10('3) cm('-1). The cell is constructed by clamping a gasket between two flat optical windows. This unique design allows the use of any optical windows chemically compatible with the liquid. The long -wavelength limit of the measurements is therefore limited only by the choice of the optical windows. The thickness of the cell can easily be set during assembly, and can be varied from 50 (mu)m to .5 cm. Measurements of the optical absorption edge were performed on the liquid alloy Se(,1-x)Tl(,x) for x = 0, .001, .002, .003, .005, .007, and .009, from the melting point up to 475(DEGREES)C. The absorption was found to be exponential in the photon energy over the experimental range from 0.3 eV to 1.2 eV. The absorption increased linearly with concentration according to the empirical relation (alpha)(,T)(h(nu)) = (alpha)(,1) + (alpha)(,2)x, and the absorption (alpha)(,1) was interpreted as the absorption in the absence of T1. (alpha)(,1) also agreed with the measured absorption in 100% Se at corresponding temperatures and energies. The excess absorption defined by (DELTA)(alpha) = (alpha)(,T)(h(nu))-(alpha)(,1) was interpreted as the absorption associated with Tl and was found to be thermally activated with an activation energy E(,t) = 0.5 eV. The exponential edge is explained as absorption on atoms immersed in strong electric fields surrounding ions. The strong fields give rise to an absorption tail similar to the Franz-Keldysh effect. A simple calculation is performed which is based on the Dow-Redfield theory of absorption in an electric field with excitonic effects included. The excess absorption at low photon energies is proportional to the square of the concentration of ions, which are proposed to exist in the liquid according to the relation C(,i) (PROPORTIONAL) x(' 1/2)(.)e('-E)t('/kT), which is the origin of the thermal activation

  18. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1996-08-20

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

  19. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

  20. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  1. Optical processing for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Sopori, Bhushan L.

    1994-01-01

    A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

  2. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1994-01-01

    Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

  3. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, J.W.

    1998-06-30

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

  4. Optical temperature indicator using thermochromic semiconductors

    SciTech Connect

    Kronberg, J.W.

    1995-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  5. Optical temperature sensor using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1998-01-01

    An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

  6. Investigation of semiconductor clad optical waveguides

    NASA Technical Reports Server (NTRS)

    Batchman, T. E.; Carson, R. F.

    1985-01-01

    A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

  7. Optical temperature indicator using thermochromic semiconductors

    DOEpatents

    Kronberg, James W.

    1996-01-01

    A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

  8. Optical bistability in semiconductor microcavities

    SciTech Connect

    Baas, A.; Karr, J.Ph.; Giacobino, E.; Eleuch, H.

    2004-02-01

    We report the observation of polaritonic bistability in semiconductor microcavities in the strong-coupling regime. The origin of bistability is the polariton-polariton interaction, which gives rise to a Kerr-like nonlinearity. The experimental results are in good agreement with a simple model taking transverse effects into account.

  9. Electrically driven optical metamaterials

    PubMed Central

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  10. Electrically driven optical metamaterials.

    PubMed

    Le-Van, Quynh; Le Roux, Xavier; Aassime, Abdelhanin; Degiron, Aloyse

    2016-01-01

    The advent of metamaterials more than 15 years ago has offered extraordinary new ways of manipulating electromagnetic waves. Yet, progress in this field has been unequal across the electromagnetic spectrum, especially when it comes to finding applications for such artificial media. Optical metamaterials, in particular, are less compatible with active functionalities than their counterparts developed at lower frequencies. One crucial roadblock in the path to devices is the fact that active optical metamaterials are so far controlled by light rather than electricity, preventing them from being integrated in larger electronic systems. Here we introduce electroluminescent metamaterials based on metal nano-inclusions hybridized with colloidal quantum dots. We show that each of these miniature blocks can be individually tuned to exhibit independent optoelectronic properties (both in terms of electrical characteristics, polarization, colour and brightness), illustrate their capabilities by weaving complex light-emitting surfaces and finally discuss their potential for displays and sensors. PMID:27328976

  11. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  12. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  13. Optical-fiber-coupled optical bistable semiconductor lasers

    SciTech Connect

    Zhing Lichen; Tang Yunxin; Qin Ying; Guo Yili

    1986-12-01

    A compact, low input power optical bistable device, consisting of a photodetector, an optical fiber directional coupler, and a semiconductor laser diode, was presented. The principle is described graphically to explain the observed effects such as hysteresis, differential operational gain and memory functions.

  14. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology. PMID:20078065

  15. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  16. Optical investigations of noncrystalline semiconductors. [considering silicon and boron films

    NASA Technical Reports Server (NTRS)

    Blum, N. A.; Feldman, C.; Moorjani, K.

    1973-01-01

    Three areas of investigation into the properties of amorphous silicon and boron are reported: (1) optical properties of elemental amorphous semiconductors; (2) Mossbauer studies of disordered systems; and (3) theoretical aspects of disordered semiconductors.

  17. Space-division optical switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, Robert F.; Kazovsky, Leonid G.; Goodman, Joseph W.

    Benes and distributed gain matrix-vector multiplier (MVM) switches larger than 10 exp 10 x 10 exp can, in principle, be achieved by using semiconductor optical amplifiers (SOA's). In contrast, lumped gain SOA-based MVM switches are limited in size to less than 100 x 100.

  18. Optical Stark effect in 2D semiconductors

    NASA Astrophysics Data System (ADS)

    Sie, Edbert J.; McIver, James W.; Lee, Yi-Hsien; Fu, Liang; Kong, Jing; Gedik, Nuh

    2016-05-01

    Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS2).

  19. Glass-clad semiconductor core optical fibers

    NASA Astrophysics Data System (ADS)

    Morris, Stephanie Lynn

    Glass-clad optical fibers comprising a crystalline semiconductor core have garnered considerable recent attention for their potential utility as novel waveguides for applications in nonlinear optics, sensing, power delivery, and biomedicine. As research into these fibers has progressed, it has become evident that excessive losses are limiting performance and so greater understanding of the underlying materials science, coupled with advances in fiber processing, is needed. More specifically, the semiconductor core fibers possess three performance-limiting characteristics that need to be addressed: (a) thermal expansion mismatches between crystalline core and glass cladding that lead to cracks, (b) the precipitation of oxide species in the core upon fiber cooling, which results from partial dissolution of the cladding glass by the core melt, and (c) polycrystallinity; all of which lead to scattering and increased transmission losses. This dissertation systematically studies each of these effects and develops both a fundamental scientific understanding of and practical engineering methods for reducing their impact. With respect to the thermal expansion mismatch and, in part, the dissolution of oxides, for the first time to our knowledge, oxide and non-oxide glass compositions are developed for a series of semiconductor cores based on two main design criteria: (1) matching the thermal expansion coefficient between semiconductor core and glass cladding to minimize cracking and (2) matching the viscosity-temperature dependences, such that the cladding glass draws into fiber at a temperature slightly above the melting point of the semiconductor in order to minimize dissolution and improve the fiber draw process. The x[Na 2O:Al2O3] + (100 - 2x)SiO2 glass compositional family was selected due to the ability to tailor the glass properties to match the aforementioned targets through slight variations in composition and adjusting the ratios of bridging and non-bridging oxygen

  20. Optical and thermal properties of doped semiconductor

    NASA Astrophysics Data System (ADS)

    Abroug, S.; Saadallah, F.; Yacoubi, N.

    2008-01-01

    The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.

  1. Optical dephasing in semiconductor mixed crystals

    NASA Astrophysics Data System (ADS)

    Siegner, U.; Weber, D.; Göbel, E. O.; Bennhardt, D.; Heuckeroth, V.; Saleh, R.; Baranovskii, S. D.; Thomas, P.; Schwab, H.; Klingshirn, C.; Hvam, J. M.; Lyssenko, V. G.

    1992-08-01

    The influence of disorder and localization on optical dephasing of excitons in the semiconductor mixed crystals CdS1-xSex and AlxGa1-xAs has been investigated by means of time-resolved four-wave mixing and photon echo experiments. A dephasing time of several hundreds of picoseconds is found for resonantly excited localized excitons in CdS1-xSex while the dephasing time in AlxGa1-xAs amounts to only a few picoseconds. In CdS1-xSex dephasing results mainly from hopping processes, i.e., exciton-phonon interaction. The contribution of disorder is negligible in terms of phase relaxation in CdS1-xSex. In contrast, in AlxGa1-xAs elastic disorder scattering yields an essential contribution to the dephasing rate. We present a theoretical model, which treats dephasing of optical excitations in a disordered semiconductor, including the influence of disorder as well as exciton-phonon interaction. On the base of this model, the experimentally observed differences in the dephasing behavior of excitons in CdS1-xSex and AlxGa1-xAs are related to the microscopic structure of the disorder potential and the mechanism of exciton localization.

  2. An integrated semiconductor device enabling non-optical genome sequencing.

    PubMed

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-21

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome. PMID:21776081

  3. A Low-Noise Semiconductor Optical Amplifier

    SciTech Connect

    Ratowsky, R.P.; Dijaili, S.; Kallman, J.S.; Feit, M.D.; Walker, J.

    1999-03-23

    Optical amplifiers are essential devices for optical networks, optical systems, and computer communications. These amplifiers compensate for the inevitable optical loss in long-distance propagation (>50 km) or splitting (>10x). Fiber amplifiers such as the erbium-doped fiber amplifier have revolutionized the fiber-optics industry and are enjoying widespread use. Semiconductor optical amplifiers (SOAs) are an alternative technology that complements the fiber amplifiers in cost and performance. One obstacle to the widespread use of SOAs is the severity of the inevitable noise output resulting from amplified spontaneous emission (ASE). Spectral filtering is often used to reduce ASE noise, but this constrains the source spectrally, and improvement is typically limited to about 10 dB. The extra components also add cost and complexity to the final assembly. The goal of this project was to analyze, design, and take significant steps toward the realization of an innovative, low-noise SOA based on the concept of ''distributed spatial filtering'' (DSF). In DSF, we alternate active SOA segments with passive free-space diffraction regions. Since spontaneous emission radiates equally in all directions, the free-space region lengthens the amplifier for a given length of gain region, narrowing the solid angle into which the spontaneous emission is amplified [1,2]. Our innovation is to use spatial filtering in a differential manner across many segments, thereby enhancing the effect when wave-optical effects are included [3]. The structure quickly and effectively strips the ASE into the higher-order modes, quenching the ASE gain relative to the signal.

  4. Optical effects of spin currents in semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Jing

    2011-03-01

    BANG-FEN ZHU, Department of Physics and Institute of Advanced Study, Tsinghua University, REN-BAO LIU, Department of Physics, The Chinese University of Hong Kong -- We predict the linear and second-order nonlinear optical effects of spin currents in semiconductors, based on systematic symmetry analysis and microscopic calculations with realistic models [1, 2]. By an analogue to the Ampere effect and Oersted effect, we conceived and verified that a spin current can be coupled to a ``photon spin curren'' carried by a polarized light beam, which causes sizeable Faraday rotation without involving net magnetization. Furthermore, a spin current can have a strong second-order nonlinear optical effect with unique polarization-dependence due to the special symmetry properties of the spin current. In particular, for a longitudinal spin current, in which the spins point parallel or anti-parallel to the current direction is a chiral quantity, a chiral sum-frequency effect will be induced. The second-order optical effects of spin currents have been experimentally verified immediately after the theoretical prediction. These discoveries represent new phenomena in magneto-optics, with potential spin-photonic applications. They bring new opportunities to research of spintronics and may also facilitate research of topological insulators where the edge states form pure spin currents. This work was supported by the NSFC Grant Nos.10574076, 10774086, and the Basic Research Program of China Grant 2006CB921500, Hong Kong RGC HKU 10/CRF/08 and Hong Kong GRF CUHK 402207.

  5. Optically controlled spins in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Economou, Sophia

    2010-03-01

    Spins in charged semiconductor quantum dots are currently generating much interest, both from a fundamental physics standpoint, as well as for their potential technological relevance. Being naturally a two-level quantum system, each of these spins can encode a bit of quantum information. Optically controlled spins in quantum dots possess several desirable properties: their spin coherence times are long, they allow for all-optical manipulation---which translates into fast logic gates---and their coupling to photons offers a straightforward route to exchange of quantum information between spatially separated sites. Designing the laser fields to achieve the unprecedented amount of control required for quantum information tasks is a challenging goal, towards which there has been recent progress. Special properties of hyperbolic secant optical pulses enabled the design of single qubit rotations, initially developed about the growth axis z [1], and later about an arbitrary direction [2]. Recently we demonstrated our theoretical proposal [1] in an ensemble of InAs/GaAs quantum dots by implementing ultrafast rotations about the z axis by an arbitrary angle [3], with the angle of rotation as a function of the optical detuning in excellent agreement with the theoretical prediction. We also developed two-qubit conditional control in a quantum dot `molecule' using the electron-hole exchange interaction [4]. In addition to its importance in quantum dot-based quantum computation, our two-qubit gate can also play an important role in photonic cluster state generation for measurement-based quantum computing [5]. [1] S. E. Economou, L. J. Sham, Y. Wu, D. S. Steel, Phys. Rev. 74, 205415 (2006) [2] S. E. Economou and T. L. Reinecke, Phys. Rev. Lett., 99, 217401 (2007) [3] A. Greilich, S. E. Economou et al, Nature Phys. 5, 262 (2009) [4] S. E. Economou and T. L. Reinecke, Phys. Rev. B, 78, 115306 (2008) [5] S. E. Economou, N. H. Lindner, and T. Rudolph, in preparation

  6. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices. PMID:26694227

  7. Optical investigations of nanostructured oxides and semiconductors

    NASA Astrophysics Data System (ADS)

    Irvin, Patrick Richard

    This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

  8. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  9. Nonlinear-microscopy optical-pulse sources based on mode-locked semiconductor lasers.

    PubMed

    Yokoyama, H; Sato, A; Guo, H-C; Sato, K; Mure, M; Tsubokawa, H

    2008-10-27

    We developed picosecond optical-pulse sources suitable for multiphoton microscopy based on mode-locked semiconductor lasers. Using external-cavity geometry, stable hybrid mode locking was achieved at a repetition rate of 500 MHz. Semiconductor optical amplifiers driven by synchronized electric pulses reached subharmonic optical-pulse repetition rates of 1-100 MHz. Two-stage Yb-doped fiber amplifiers produced optical pulses of 2 ps duration, with a peak power of a few kilowatts at a repetition rate of 10 MHz. These were employed successfully for nonlinear-optic bio-imaging using two-photon fluorescence, second-harmonic generation, and sum-frequency generation of synchronized two-color pulses. PMID:18958056

  10. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2012-08-07

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  11. Optical devices featuring textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  12. Periodically Diameter-Modulated Semiconductor Nanowires for Enhanced Optical Absorption.

    PubMed

    Ko, Minjee; Baek, Seong-Ho; Song, Bokyung; Kang, Jang-Won; Kim, Shin-Ae; Cho, Chang-Hee

    2016-04-01

    A diameter-modulated silicon nanowire array to enhance the optical absorption across broad spectral range is presented. Periodic shape engineering is achieved using conventional semiconductor processes and the unique optical properties are analyzed. The periodicity in the diameter of the silicon nanowires enables stronger and more closely spaced optical resonances, leading to broadband absorption enhancement. PMID:26833855

  13. Tapered rib fiber coupler for semiconductor optical devices

    DOEpatents

    Vawter, Gregory A.; Smith, Robert Edward

    2001-01-01

    A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

  14. Effect of additional optical pumping injection into the ground-state ensemble on the gain and the phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2014-02-01

    The effect of additional optical pumping injection into the ground-state ensemble on the ultrafast gain and the phase recovery dynamics of electrically-driven quantum-dot semiconductor optical amplifiers is numerically investigated by solving 1088 coupled rate equations. The ultrafast gain and the phase recovery responses are calculated with respect to the additional optical pumping power. Increasing the additional optical pumping power can significantly accelerate the ultrafast phase recovery, which cannot be done by increasing the injection current density.

  15. Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

  16. Optical devices featuring nonpolar textured semiconductor layers

    DOEpatents

    Moustakas, Theodore D; Moldawer, Adam; Bhattacharyya, Anirban; Abell, Joshua

    2013-11-26

    A semiconductor emitter, or precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

  17. Optical absorption in semiconductor nanorings under electric and magnetic fields

    NASA Astrophysics Data System (ADS)

    Zhang, Tong-Yi; Cao, Jun-Cheng; Zhao, Wei

    2005-01-01

    The optical absorption in semiconductor nanorings under a lateral DC field and a perpendicular magnetic field is numerically simulated by coherent wave approach. The exciton dominated optical absorption is compared with the free-carrier interband absorption to demonstrate the key role of Coulomb interaction between electron and hole. The influence of the lateral DC field and the perpendicular magnetic field on the optical absorption are discussed in detail. It shows that the lateral DC field can significantly enhance the Aharonov-Bohm effect of the neutral excitons in semiconductor nanorings.

  18. Optical trapping with Bessel beams generated from semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Soboleva, K. K.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

    2014-12-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations.

  19. Frequency chirping in semiconductor-optical fiber ring laser

    SciTech Connect

    Zhang, Jiangping; Ye, Peida )

    1990-01-01

    In this letter, a complete small-signal analysis for frequency chirping in the semiconductor-optical fiber ring laser is presented. It shows that chirp-to-power ratio (CPR) strongly depends on the junction phase shift, the optical coupling, and the phase detuning between two cavities, especially if the modulation frequency is below the gigahertz range. 7 refs.

  20. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    SciTech Connect

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  1. Multidimensional coherent optical spectroscopy of semiconductor nanostructures: a review

    NASA Astrophysics Data System (ADS)

    Nardin, Gaël

    2016-02-01

    Multidimensional coherent optical spectroscopy (MDCS) is an elegant and versatile tool to measure the ultrafast nonlinear optical response of materials. Of particular interest for semiconductor nanostructures, MDCS enables the separation of homogeneous and inhomogeneous linewidths, reveals the nature of coupling between resonances, and is able to identify the signatures of many-body interactions. As an extension of transient four-wave mixing (FWM) experiments, MDCS can be implemented in various geometries, in which different strategies can be used to isolate the FWM signal and measure its phase. I review and compare different practical implementations of MDCS experiments adapted to the study of semiconductor materials. The power of MDCS is illustrated by discussing experimental results obtained on semiconductor nanostructures such as quantum dots, quantum wells, microcavities, and layered semiconductors.

  2. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  3. Ultrafast laser-induced changes in optical properties of semiconductors

    SciTech Connect

    Chirila, C. C.; Lim, Freda C. H.; Gavaza, M. G.

    2012-04-01

    We study the effect of laser radiation on optical properties of semiconductors of industrial interest. The material is pumped with a laser of chosen central frequency, for which the absorption is maximal, thus inducing electron dynamics, which modifies the optical properties. By using an improved theoretical model, we study ultrafast dynamic changes in the refraction index and reflectivity corresponding to a wide frequency-interval of probing radiation and identify that interval where these optical changes are most significant.

  4. Message extraction mechanism in optical chaos communications using injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-09-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  5. Emergence of transverse spin in optical modes of semiconductor nanowires.

    PubMed

    Alizadeh, M H; Reinhard, Björn M

    2016-04-18

    The transverse spin angular momentum of light has recently received tremendous attention as it adds a new degree of freedom for controlling light-matter interactions. In this work we demonstrate the generation of transverse spin angular momentum by the weakly-guided mode of semiconductor nanowires. The evanescent field of these modes in combination with the transversality condition rigorously accounts for the occurrence of transverse spin angular momentum. The intriguing and nontrivial spin properties of optical modes in semiconductor nanowires are of high interest for a broad range of new applications including chiral optical trapping, quantum information processing, and nanophotonic circuitry. PMID:27137285

  6. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  7. Statistical Transmutation in Floquet Driven Optical Lattices

    NASA Astrophysics Data System (ADS)

    Sedrakyan, Tigran A.; Galitski, Victor M.; Kamenev, Alex

    2015-11-01

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state.

  8. Statistical Transmutation in Floquet Driven Optical Lattices.

    PubMed

    Sedrakyan, Tigran A; Galitski, Victor M; Kamenev, Alex

    2015-11-01

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state. PMID:26588392

  9. Optical spectroscopy of organic semiconductor monolayers

    NASA Astrophysics Data System (ADS)

    He, Rui; Tassi, Nancy G.; Blanchet, Graciela B.; Pinczuk, Aron

    2011-02-01

    Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.

  10. Optical spectroscopy of organic semiconductor monolayers

    NASA Astrophysics Data System (ADS)

    He, Rui; Tassi, Nancy G.; Blanchet, Graciela B.; Pinczuk, Aron

    2010-10-01

    Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.

  11. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  12. Hydrodynamic synchronisation of optically driven rotors

    NASA Astrophysics Data System (ADS)

    Debono, Luke J.; Box, Stuart; Phillips, David B.; Simpson, Stephen H.; Hanna, Simon

    2015-08-01

    Hydrodynamic coupling is thought to play a role in the coordinated beating of cilia and flagella, and may inform the future design of artificial swimmers and pumps. In this study, optical tweezers are used to investigate the hydrodynamic coupling between a pair of driven oscillators. The theoretical model of Lenz and Ryskin [P. Lenz and A. Ryskin, Phys. Biol. 3, 285{294 (2006)] is experimentally recreated, in which each oscillator consists of a sphere driven in a circular trajectory. The optical trap position is maintained ahead of the sphere to provide a tangential driving force. The trap is also moved radially to harmonically constrain the sphere to the circular trajectory. Analytically, it has been shown that two oscillators of this type are able to synchronise or phase-lock under certain conditions. We explore the interplay between synchronisation mechanisms and find good agreement between experiment, theory and Brownian dynamics simulations.

  13. Fiber optic mounted laser driven flyer plates

    SciTech Connect

    Paisley, D.L.

    1990-12-31

    This invention is comprised of a laser driven flyer plate where the flyer plate is deposited directly onto the squared end of an optical fiber. The plasma generated by a laser pulse drives the flyer plate toward a target. In another embodiment, a first metal layer is deposited onto the squared end of an optical fiber, followed by a layer of a dielectric material and a second metal layer. The laser pulse generates a plasma in the first metal layer, but the plasma is kept away from the second metal layer by the dielectric layer until the pressure reaches the point where shearing occurs. 2 figs.

  14. Zero-field optical manipulation of magnetic ions in semiconductors.

    PubMed

    Myers, R C; Mikkelsen, M H; Tang, J-M; Gossard, A C; Flatté, M E; Awschalom, D D

    2008-03-01

    Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible. PMID:18278049

  15. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  16. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  17. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  20. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  1. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  2. Optical velocimeters for moving surfaces using gas and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya.; Dubnistshev, Yu. N.; Meledin, V. G.

    1990-10-01

    A differential arrangement using a laser for the measurement of the velocity of moving surfaces is discussed. Configurations of optical velocimeters with diffraction beam-splitters are shown not to be critical on the wavelength stability of a semiconductor laser. Laser meters measuring the velocity and length of rolled stock have been built on the basis of the devices considered.

  3. Demonstration of slow light in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Patil, Anoop C.; Venkitesh, Deepa; Dexter, Karl; Anandarajah, Prince; Barry, Liam P.

    2011-08-01

    Slow light generation through four wave mixing is experimentally investigated in a non-linear semiconductor optical amplifier (SOA). The mechanism of slow-light generation is analyzed through gain saturation behavior of the SOA. The delay of the probe beam is controlled optically by pump-probe detuning. A delay of 260 ps is achieved for sinusoidal modulation at 0.5 GHz corresponding to a RF phase change of 0.26π.

  4. Demonstration of slow light in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Patil, Anoop C.; Venkitesh, Deepa; Dexter, Karl; Anandarajah, Prince; Barry, Liam P.

    2010-12-01

    Slow light generation through four wave mixing is experimentally investigated in a non-linear semiconductor optical amplifier (SOA). The mechanism of slow-light generation is analyzed through gain saturation behavior of the SOA. The delay of the probe beam is controlled optically by pump-probe detuning. A delay of 260 ps is achieved for sinusoidal modulation at 0.5 GHz corresponding to a RF phase change of 0.26π.

  5. Tunable excitation of mid-infrared optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Olafsen, Linda J.; Kunz, Jeremy; Ongstad, Andrew P.; Kaspi, Ron

    2013-01-01

    While conventional semiconductor lasers employ electrical injection for carrier excitation, optically pumped semiconductor lasers (OPSLs) have demonstrated high output powers and high brightness in the mid-infrared. An important consideration for optically pumped lasers is efficient absorption of the pump beam, which can be achieved through increasing the number of periods in the active region, by placing the active region in a cavity with an optical thickness of twice the pump wavelength between distributed Bragg reflectors (Optical Pumping Injection Cavity), or by periodically inserting the active quantum wells into an InGaAsSb waveguide designed to absorb the pump radiation (Integrated Absorber). A tunable optical pumping technique is utilized by which threshold intensities are minimized and efficiencies are maximized. The near-IR idler output of a Nd:YAG-pumped optical parametric oscillator (10 Hz, ~4 ns) is the tunable optical pumping source in this work. Results are presented for an OPSL with a type-II W active region embedded in an integrated absorber to enhance the absorption of the optical pump beam. Emission wavelengths range from 4.64 μm at 78 K to 4.82 μm at 190 K for optical pump wavelengths ranging from 1930-1950 nm. The effect of wavelength tuning is demonstrated and compared to single wavelength pumping (1940 nm) at a higher duty cycle (20- 30%). Comparisons are also made to other OPSLs, including a discussion of the characteristic temperature and high temperature performance of these devices.

  6. Experimental and theoretical investigation of semiconductor optical amplifier (SOA)-based all-optical wavelength converters

    NASA Astrophysics Data System (ADS)

    Dailey, James M.

    Use of fiber-optical networks has increased along with the growing demand for higher data throughputs. As data bandwidths increase, physical switching technologies must also scale accordingly. Optical-electrical-optical (OEO) switching technologies are widely utilized, where incoming optical signals are converted into and processed as electrical signals before conversion back into the optical domain. However, issues such as speed, cost, and power consumption have driven interest in the development of all-optical techniques, where data remains in the optical domain while being processed. Semiconductor optical amplifiers (SOAs) have shown great promise for realizing all-optical technologies. Our work begins with the experimental characterization of SOAs, and we discuss the use of a time-resolved spectroscopy technique. We present a detailed analysis clarifying measurement requirements, though we conclude that this simple technique provides insufficient resolution for characterizing high-speed optical systems. We discuss the measurement theory for spectrograms, which provide high signal-to-noise ratios, excellent temporal resolution, and are sensitive to phase dynamics. We apply the spectrogram measurement to the characterization of an SOA. We develop a system of rate equations for modeling SOA dynamics, beginning with a detailed density matrix analysis providing expressions for gain and chirp without invoking the linewidth-enhancement factor. In accordance with the measurement results, we include a carrier temperature rate calculation in order to capture ultrafast dynamics. The traveling wave partial differential equations are solved so that both forward and reverse propagating signals are accurately modeled, and the results show good agreement with the spectrogram measurement. We identify the free-carrier plasma and the asymmetrical broadening terms in the real and imaginary parts of the refractive index as driving factors in the relatively larger ultrafast response

  7. Integrated superconducting detectors on semiconductors for quantum optics applications

    NASA Astrophysics Data System (ADS)

    Kaniber, M.; Flassig, F.; Reithmaier, G.; Gross, R.; Finley, J. J.

    2016-05-01

    Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit nonclassical states of light for distributed photon-based quantum information technologies. In this article, we review our recent achievements on the growth, nanofabrication and integration of high-quality, superconducting niobium nitride thin films on optically active, semiconducting GaAs substrates and their patterning to realize highly efficient and ultra-fast superconducting detectors on semiconductor nanomaterials containing quantum dots. Our state-of-the-art detectors reach external detection quantum efficiencies up to 20 % for ~4 nm thin films and single-photon timing resolutions <72 ps. We discuss the integration of such detectors into quantum dot-loaded, semiconductor ridge waveguides, resulting in the on-chip, time-resolved detection of quantum dot luminescence. Furthermore, a prototype quantum optical circuit is demonstrated that enabled the on-chip generation of resonance fluorescence from an individual InGaAs quantum dot, with a linewidth <15 μeV displaced by 1 mm from the superconducting detector on the very same semiconductor chip. Thus, all key components required for prototype quantum photonic circuits with sources, optical components and detectors on the same chip are reported.

  8. Optical Fano resonance of an individual semiconductor nanostructure.

    PubMed

    Fan, Pengyu; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L

    2014-05-01

    Fano resonances with a characteristic asymmetric line shape can be observed in light scattering, transmission and reflection spectra of resonant optical systems. They result from interference between direct and indirect, resonance-assisted pathways. In the nanophotonics field, Fano effects have been observed in a wide variety of systems, including metallic nanoparticle assemblies, metamaterials and photonic crystals. Their unique properties find extensive use in applications, including optical filtering, polarization selectors, sensing, lasers, modulators and nonlinear optics. We report on the observation of a Fano resonance in a single semiconductor nanostructure, opening up opportunities for their use in active photonic devices. We also show that Fano-resonant semiconductor nanostructures afford the intriguing opportunity to simultaneously measure the far-field scattering response and the near-field energy storage by extracting photogenerated charge. Together they can provide a complete experimental characterization of this type of resonance. PMID:24747781

  9. Statistical Transmutation in Periodically Driven Optical Lattices

    NASA Astrophysics Data System (ADS)

    Sedrakyan, Tigran; Galitski, Victor; Kamenev, Alex

    We show that interacting bosons in a periodically driven two dimensional (2D) optical lattice may effectively exhibit fermionic statistics. The phenomenon is similar to the celebrated Tonks-Girardeau regime in 1D. The Floquet band of a driven lattice develops the moat shape, i.e., a minimum along a closed contour in the Brillouin zone. Such degeneracy of the kinetic energy favors fermionic quasiparticles. The statistical transmutation is achieved by the Chern-Simons flux attachment similar to the fractional quantum Hall case. We show that the velocity distribution of the released bosons is a sensitive probe of the fermionic nature of their stationary Floquet state. This work was supported by the PFC-JQI (T.S.), USARO and Simons Foundation (V.G.), and DOE Contract DE-FG02-08ER46482 (A.K.).

  10. Testing methodologies and systems for semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  11. Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

  12. Optically Loaded Semiconductor Quantum Memory Register

    NASA Astrophysics Data System (ADS)

    Kim, Danny; Kiselev, Andrey A.; Ross, Richard S.; Rakher, Matthew T.; Jones, Cody; Ladd, Thaddeus D.

    2016-02-01

    We propose and analyze an optically loaded quantum memory that exploits capacitive coupling between self-assembled quantum-dot molecules and electrically gated quantum-dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and outline both its operation and fabrication. We provide self-consistent Poisson-Schrödinger simulations to establish the design viability, to refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.

  13. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    DOEpatents

    Hui, Rongqing; Jiang,Hong-Xing; Lin, Jing-Yu

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  14. All-optical active switching in individual semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Piccione, Brian; Cho, Chang-Hee; van Vugt, Lambert K.; Agarwal, Ritesh

    2012-10-01

    The imminent limitations of electronic integrated circuits are stimulating intense activity in the area of nanophotonics for the development of on-chip optical components, and solutions incorporating direct-bandgap semiconductors are important in achieving this end. Optical processing of data at the nanometre scale is promising for circumventing these limitations, but requires the development of a toolbox of components including emitters, detectors, modulators, waveguides and switches. In comparison to components fabricated using top-down methods, semiconductor nanowires offer superior surface properties and stronger optical confinement. They are therefore ideal candidates for nanoscale optical network components, as well as model systems for understanding optical confinement. Here, we demonstrate all-optical switching in individual CdS nanowire cavities with subwavelength dimensions through stimulated polariton scattering, as well as a functional NAND gate built from multiple switches. The device design exploits the strong light-matter coupling present in these nanowires, leading to footprints that are a fraction of those of comparable silicon-based dielectric contrast and photonic crystal devices.

  15. Exchange-Driven Spin Relaxation in Ferromagnet-Oxide-Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Ou, Yu-Sheng; Chiu, Yi-Hsin; Harmon, N. J.; Odenthal, Patrick; Sheffield, Matthew; Chilcote, Michael; Kawakami, R. K.; Flatté, M. E.; Johnston-Halperin, E.

    2016-03-01

    We demonstrate that electron spin relaxation in GaAs in the proximity of a Fe /MgO layer is dominated by interaction with an exchange-driven hyperfine field at temperatures below 60 K. Temperature-dependent spin-resolved optical pump-probe spectroscopy reveals a strong correlation of the electron spin relaxation with carrier freeze-out, in quantitative agreement with a theoretical interpretation that at low temperatures the free-carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. As the regime of large nuclear inhomogeneity is accessible in these heterostructures for magnetic fields <3 kG , inferences from this result resolve a long-standing and contentious dispute concerning the origin of spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding clarifies the importance of future experiments probing the time-dependent exchange interaction at a ferromagnet-semiconductor interface and its consequences for spin dissipation and transport during spin pumping.

  16. Nonlinear intersubband optical absorption in a semiconductor quantum well

    NASA Technical Reports Server (NTRS)

    Ahn, D.; Chuang, S. L.

    1987-01-01

    The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/sq cm for the well size L = 126.5 A with 3.0 x 10 to the 16th/cu cm electrons.

  17. Microwave photonic interference mitigation filter based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Xu, Enming; Zhang, Xinliang; Zhou, Lina; Zhang, Yu; Yu, Yuan; Wang, Fei; Huang, Dexiu

    2009-11-01

    A microwave photonic interference mitigation filter is proposed and experimentally demonstrated. The structure is based on a recirculating delay line loop comprising a semiconductor optical amplifier (SOA) and a tunable narrowband optical filter. Converted signal used as negative tap is generated through wavelength conversion employing cross-gain modulation of amplified spontaneous emission spectrum of the SOA. The converted signal circulating in the RDL loop realizes a high quality factor (Q) response after photo-detection. A bandpass response with negative coefficients combined with a broadband allpass response achieves a notch response with flat passband.

  18. Transient optical properties of semiconductors under femtosecond x-ray irradiation

    NASA Astrophysics Data System (ADS)

    Tkachenko, Victor; Medvedev, Nikita; Li, Zheng; Piekarz, Przemysław; Ziaja, Beata

    2016-04-01

    Semiconductors under femtosecond x-ray irradiation are transiently excited to nonequilibrium states. This can lead to observable material modifications. During the excitation and relaxation dynamics, optical properties of the solid are changing, affected by both transient electron excitation as well as the evolution of the atomic structure. In this paper we apply a unified hybrid model to trace these two effects. Transient evolution of the optical properties is calculated within the transferable tight-binding approach. The presented methodology of calculation of the complex dielectric function proves to be capable of describing changes in the optical parameters during the phase transitions, when the solids are driven out of equilibrium by intense laser pulses, in a reasonable agreement with experiments.

  19. Adaptive optics assisted reconfigurable liquid-driven optical switch

    NASA Astrophysics Data System (ADS)

    Fuh, Yiin-Kuen; Huang, Wei-Chi

    2013-07-01

    This study demonstrates a mechanical-based, liquid-driven optical switch integrated with adaptive optics and a reconfigurable black liquid (dye-doped liquid). The device aperture can be continuously tuned between 0.6 and 6.9 mm, precisely achieved by a syringe pump for volume control. Adaptive optics (AO) capability and possible enhancement of the lost power intensity of the ink-polluted glass plate have also been experimentally investigated. While measuring power intensity with/without AO indicates only a marginal difference of ˜1%, a significant difference of 3 s in the response characteristic of "switching on" time can be observed. An extremely high contrast ratio of ˜105 for a red-colored light is achieved.

  20. Optical band gaps of organic semiconductor materials

    NASA Astrophysics Data System (ADS)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  1. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  2. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  3. Simulating semiconductor structures for next-generation optical inspection technologies

    NASA Astrophysics Data System (ADS)

    Golani, Ori; Dolev, Ido; Pond, James; Niegemann, Jens

    2016-02-01

    We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection.

  4. Density driven structural transformations in amorphous semiconductor clathrates

    SciTech Connect

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with the consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.

  5. Density driven structural transformations in amorphous semiconductor clathrates

    DOE PAGESBeta

    Tulk, Christopher A.; dos Santos, Antonio M.; Neuefeind, Joerg C.; Molaison, Jamie J.; Sales, Brian C.; Honkimaeki, Veijo

    2015-01-16

    The pressure induced crystalline collapse at 14.7 GPa and polyamorphic structures of the semiconductor clathrate Sr8Ga16Ge30 are reported up to 35 GPa. In-situ total scattering measurements under pressure allow the direct microscopic inspection of the mechanisms associated with pressure induced amorphization in these systems, as well as the structure of the recovered phase. It is observed that, between 14.7 and 35 GPa the second peak in the structure factor function gradually disappears. Analysis of the radial distribution function extracted from those data indicate that this feature is associated with gradual cage collapse and breakdown of the tetrahedral structure with themore » consequent systematic lengthening of the nearest-neighbor framework bonds. This suggests an overall local coordination change to an even higher density amorphous form. Upon recovery from high pressure, the sample remains amorphous, and while there is some indication of the guest-host cage reforming, it doesn't seem that the tetrahedral coordination is recovered. As such, the compresion-decompression process in this systems gives rise to three distict amorphous forms.« less

  6. Petahertz optical drive with wide-bandgap semiconductor

    NASA Astrophysics Data System (ADS)

    Mashiko, Hiroki; Oguri, Katsuya; Yamaguchi, Tomohiko; Suda, Akira; Gotoh, Hideki

    2016-08-01

    High-speed photonic and electronic devices at present rely on radiofrequency electric fields to control the physical properties of a semiconductor, which limits their operating speed to terahertz frequencies (1012 Hz ref. ). Using the electric field from intense light pulses, however, could extend the operating frequency into the petahertz regime (1015 Hz ref. ). Here we demonstrate optical driving at a petahertz frequency in the wide-bandgap semiconductor gallium nitride. Few-cycle near-infrared pulses are shown to induce electric interband polarization though a multiphoton process. Dipole oscillations with a periodicity of 860 as are revealed in the gallium nitride electron and hole system by using the quantum interference between the two transitions from the valence and conduction band states, which are probed by an extremely short isolated attosecond pulse with a coherent broadband spectrum. In principle, this shows that the conductivity of the semiconductor can be manipulated on attosecond timescales, which corresponds to instantaneous light-induced switching from insulator to conductor. The resultant dipole frequency reaches 1.16 PHz, showing the potential for future high-speed signal processing technologies based on wide-bandgap semiconductors.

  7. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    NASA Astrophysics Data System (ADS)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  8. Arnold diffusion in a driven optical lattice

    NASA Astrophysics Data System (ADS)

    Boretz, Yingyue; Reichl, L. E.

    2016-03-01

    The effect of time-periodic forces on matter has been a topic of growing interest since the advent of lasers. It is known that dynamical systems with 2.5 or more degrees of freedom are intrinsically unstable. As a consequence, time-periodic driven systems can experience large excursions in energy. We analyze the classical and quantum dynamics of rubidium atoms confined to a time-periodic optical lattice with 2.5 degrees of freedom. When the laser polarizations are orthogonal, the system consists of two 1.5 uncoupled dynamical systems. When laser polarizations are turned away from orthogonal, an Arnold web forms and the dynamics undergoes a fundamental change. For parallel polarizations, we find huge random excursions in the rubidium atom energies and significant entanglement of energies in the quantum dynamics.

  9. Arnold diffusion in a driven optical lattice.

    PubMed

    Boretz, Yingyue; Reichl, L E

    2016-03-01

    The effect of time-periodic forces on matter has been a topic of growing interest since the advent of lasers. It is known that dynamical systems with 2.5 or more degrees of freedom are intrinsically unstable. As a consequence, time-periodic driven systems can experience large excursions in energy. We analyze the classical and quantum dynamics of rubidium atoms confined to a time-periodic optical lattice with 2.5 degrees of freedom. When the laser polarizations are orthogonal, the system consists of two 1.5 uncoupled dynamical systems. When laser polarizations are turned away from orthogonal, an Arnold web forms and the dynamics undergoes a fundamental change. For parallel polarizations, we find huge random excursions in the rubidium atom energies and significant entanglement of energies in the quantum dynamics. PMID:27078351

  10. Trion-based Optical Processes in Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Baldwin, Thomas Kendrick

    In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood by considering the motion of these carriers individually, the optical properties are largely determined by their mutual interaction. The hydrogen-like bound state of an electron with a hole, or exciton, is the fundamental optical excitation in direct-gap materials such as gallium arsenide and cadmium telluride. In this dissertation, we consider charged excitons, or trions. A bound state of an exciton with a resident electron or hole, trions are a relatively pure manifestation of the three-body problem which can be studied experimentally. This is a subject of practical as well as academic interest: Since the trion is the elementary optical excitation of a resident free carrier, the related optical processes can open pathways for manipulating carrier spin and carrier transport. We present three experimental investigations of trion-based optical processes in semiconductor quantum wells. In the first, we demonstrate electromagnetically induced transparency via the electron spin coherence made possible by the trion transition. We explore the practical limits of this technique in high magnetic fields. In the second, we present a direct measurement of trion and exciton oscillator strength at high magnetic fields. These data reveal insights about the structure of the trion's three-body wavefunction relative to that of its next excited state, the triplet trion. In the last, we investigate the mechanism underlying exciton-correlated tunneling, an optically-controllable transport process in mixed-type quantum wells. Extensive experimental studies indicate that it is due to a local, indirect interaction between an exciton and a hole, forming one more example of a trion-mediated optical process. This dissertation includes previously published co-authored material.

  11. Local measurement of optically induced photocurrent in semiconductor structures

    NASA Astrophysics Data System (ADS)

    Benesova, Marketa; Dobis, Pavel; Tomanek, Pavel; Uhdeova, Nadezda

    2003-07-01

    Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

  12. Space division switches based on semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kalman, R. F.; Kazovsky, L. G.; Goodman, J. W.

    Semiconductor optical amplifiers (SOA's) can be used in space-division (SD) switches to provide both switching and optical gain. We present a general analysis of optical switches using SOA's, considering noise and saturation effects associated with amplified spontaneous emission. Based on this analysis, we derive size limitations of SD switches. Three specific SD switching architectures are considered. For a lumped gain matrix vector multiplier (MVM) switch, switch sizes are limited to the range of 3000 x 3000 for SOA's with saturation output powers of 100 mW. Based on the effects considered in our analysis, distributed gain MVM switches and Benes switches are not limited by signal-to noise ratio and saturation up to sizes of 10 exp 80 x 10 exp 80 for SOA's with saturation output powers of 100 mW.

  13. Theoretical investigation of a semiconductor ring laser driven by Chua's oscillator

    NASA Astrophysics Data System (ADS)

    Takougang Kingni, Sifeu; Woafo, Paul

    2013-06-01

    The modeling and numerical investigation of the dynamical behavior of a semiconductor ring laser (SRL) driven by Chua's oscillator are reported. By increasing the coupling strength between the SRL and Chua's oscillator at a fixed bias current, the SRL exhibits an intermittency route to anti-phase chaos. However, for a fixed value of the coupling strength, we report a period-doubling route to out-of-phase and anti-phase chaos when varying one of the parameters of the Chua's oscillator are reported. We also demonstrate that a SRL driven by the chaotic output of Chua's oscillator generates a more complex chaos compared to the one found in a SRL subject to a sinusoidally modulated current. This new way of modulation of semiconductor lasers would not only bring a general benefit in the physical equipment and reduce their cost but could have an impact for some relevant engineering applications.

  14. Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions.

    PubMed

    Celano, Thomas A; Hill, David J; Zhang, Xing; Pinion, Christopher W; Christesen, Joseph D; Flynn, Cory J; McBride, James R; Cahoon, James F

    2016-08-10

    Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds. PMID:27459319

  15. Ultrafast optical studies of surface reaction processes at semiconductor interfaces

    SciTech Connect

    Miller, R.J.D.

    1993-03-01

    Rectifying properties of semiconductor liquid junctions make them a simple system for converting and storing optical energy. However, interfacial electron or hole carrier transfer and competing non-radiative (energy loss) channels are not well understood at surfaces. This research has explored the use of three optical techniques, Surface Space Charge Electrooptic Sampling, Surface Restricted Transient Grating Spectroscopy, and Femtosecond Optical Kerr Spectroscopy (OKE) to obtain time evolution of the surface spatial distribution of photogenerated charge carriers, photocarrier population dynamics at semiconductor interfaces, and solvent modes responsible for charge localization and separation. These studies have shown that carriers arrive at GaAs(100) surfaces on the hundred femtosecond time scale. Improvements in time resolution, using surface grating spectroscopy, have shown interfacial hole transfer is occurring on the picosecond time scale. The OKE approach to solvent dynamics has determined the response of water to a field is multiexpontential with a major relaxation component of 100 femtoseconds. The observed interfacial hole transfer to Se[sup [minus]2] acceptors is occurring on this same time scale. This observation illustrates charge transfer processes can occur in the strong electronic coupling limit and can be competitive with carrier thermalization.

  16. Optical coupling of deep-subwavelength semiconductor nanowires.

    PubMed

    Cao, Linyou; Fan, Pengyu; Brongersma, Mark L

    2011-04-13

    Systems of coupled resonators manifest a myriad of exciting fundamental physical phenomena. Analogous to the synthesis of molecules from single atoms, the construction of photonic molecules from stand-alone optical resonators represents a powerful strategy to realize novel functionalities. The coupling of high quality factor (Q) dielectric and semiconductor microresonators is by now well-understood and chipscale applications are abound. The coupling behavior of low-Q nanometallic structures has also been exploited to realize high-performance plasmonic devices and metamaterials. Although dense arrays of semiconductor nanoparticles and nanowires (NWs) find increasing use in optoelectronic devices, their photonic coupling has remained largely unexplored. These high refractive index nano-objects can serve as low-Q optical antennas that can effectively receive and broadcast light. We demonstrate that the broad band antenna response of a pair of NWs can be tuned significantly by engineering their optical coupling and develop an intuitive coupled-mode theory to explain our observations. PMID:21443245

  17. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes

    NASA Astrophysics Data System (ADS)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  18. DBR-free optically pumped semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

    2015-03-01

    Optically pumped semiconductor disk lasers (SDLs) provide high beam quality with high average-power power at designer wavelengths. However, material choices are limited by the need for a distributed Bragg reflector (DBR), usually monolithically integrated with the active region. We demonstrate DBR-free SDL active regions, which have been lifted off and bonded to various transparent substrates. For an InGaAs multi-quantum well sample bonded to a diamond window heat spreader, we achieved CW lasing with an output power of 2 W at 1150 nm with good beam quality.

  19. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs.

    PubMed

    Lisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijärvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  20. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    PubMed Central

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  1. Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

    NASA Technical Reports Server (NTRS)

    Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

    2001-01-01

    The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch

  2. Semiconductor-doped liquid-core optical fiber.

    PubMed

    Hreibi, Ali; Gérôme, Frédéric; Auguste, Jean-Louis; Zhang, Yu; Yu, William W; Blondy, Jean-Marc

    2011-05-01

    A semiconductor liquid-core optical fiber has been made by simply filling the hollow core of a capillary waveguide with nanoparticles suspended in toluene media. Under a low continuous optical power excitation at 532 nm, the emission of PbSe particles was clearly demonstrated in the infrared region and then partially maintained in the core of the fiber by the total internal reflection mechanism. Finally, due to the guided propagation, which results in multiple absorption effects, a linear shift of the emission peak toward longer wavelengths was observed (~0.32 nm/cm). As a proof of concept, this original demonstration of visible-to-infrared conversion could lead to the development of active fibered devices at wavelengths not covered by the conventional rare-earth ion doping. PMID:21540972

  3. Coherent Semiconductor Laser Systems For Optical Intersatellite Links

    NASA Astrophysics Data System (ADS)

    Somerset, R. J.; Fletcher, G. D.

    1990-04-01

    Semiconductor laser based optical intersatellite links are attractive for use in both DRS type applications, and as links in the existing satellite-based telecommunications networks (for example between EUTELSAT SMS and INTELSAT IBS business services satellites). Initial ISL experiments will demonstrate direct detection systems using intensity modulation. Coherent systems offer significant improvements over these: the use of frequency shift keying modulation and heterodyne receivers provide significantly improved system sensitivities, which will allow practical systems with reliable laser sources (50 mW CW), and small optical telescopes (20 cm diameter). The SILEX ADD-ON CHANNEL is intended to demonstrate the potential of such systems within the framework of the ESA SILEX program.

  4. Nonlinear optical properties of metal and semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Whelan, Aine M.; Benrezzak, Sakina; Brennan, Margaret E.; Kelly, John M.; Blau, Werner J.

    2003-03-01

    The synthesis of metal (Au,Ag) and semiconductor (PbS) nanoparticles of specific morphology and shape is reported. The shape of PbS nanoparticles has been varied from spherical to oval to cubic, by use of poly(vinyl alcohol) (PVA), DNA and ethylene glycol as stabilisers respectively. For the first time, a seeding method has been used to successfully prepare PVA stabilised gold and silver nanoparticles. Characterisation of the third order optical nonlinearity of the nanoparticles has been carried out using the Z-scan technique with values of Im ÷ (3) as large as 10-10. Modulation of the magnitude of the nonlinear optical response with morphology in the case of the PbS nanoparticles is presented.

  5. Solitary and coupled semiconductor ring lasers as optical spiking neurons

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Gelens, L.; Beri, S.; Danckaert, J.; van der Sande, G.

    2011-09-01

    We theoretically investigate the possibility of generating pulses in an excitable (asymmetric) semiconductor ring laser (SRL) using optical trigger pulses. We show that the phase difference between the injected field and the electric field inside the SRL determines the direction of the perturbation in phase space. Due to the folded shape of the excitability threshold, this has an important influence on the ability to cross it. A mechanism for exciting multiple consecutive pulses using a single trigger pulse (i.e., multipulse excitability) is revealed. We furthermore investigate the possibility of using asymmetric SRLs in a coupled configuration, which is a first step toward an all-optical neural network using SRLs as building blocks.

  6. Nonlinear optical properties of atomic vapor and semiconductors

    SciTech Connect

    Kim, D

    1997-06-01

    This thesis contains the study of highly forbidden resonant second harmonic generation (SHG) in atomic potassium vapor using tunable picosecond pulses. Various output characteristics of vapor SHG have been investigated including the input intensity dependence, potassium vapor density dependence, buffer gas pressure dependence, and spatial profile. Recently, the discovery of new nonlinear optical crystals such as barium borate ({beta}-BaB{sub 2}O{sub 4}, BBO) and lithium borate (LiB{sub 3}O{sub 5}, LBO) has greatly improved the performance of a tunable coherent optical devices based on optical parametric generation and amplification. In the second part of this thesis, a homebuilt picosecond optical parametric generator/amplifier (OPG/OPA) system is described in detail, including its construction details and output characteristics. This laser device has found many useful applications in spectroscopic studies including surface nonlinear optical spectroscopy via sum-frequency generation (SFG). The last part of this thesis reports studies on multiphoton-excited photoluminescence from porous silicon and GaN. Multiphoton excitation and photoluminescence can give numerous complementary information about semiconductors not obtainable with one-photon, above-bandgap excitation.

  7. Nonlinear optical transmission of an integrated optical bent coupler in semiconductor-doped glass

    NASA Astrophysics Data System (ADS)

    Guntau, Matthias; Possner, Torsten; Braeuer, Andreas H.; Dannberg, Peter

    1991-08-01

    A technology for monomode slab and strip waveguide fabrication in semiconductor-doped glasses (SDG) is presented. On this basis, directional couplers consisting of both parallel (DC) and bent (BC) couplers of strip waveguides were realized. The optically linear and nonlinear behavior of these devices is described.

  8. Analysis of message extraction in optical chaos communications based on injection-locking synchronization of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Murakami, Atsushi; Shore, K. Alan

    2006-10-01

    In this paper, we employ a simple theory based on driven damped oscillators to clarify the physical basis for message extraction in optical chaos communications using injection-locked semiconductor lasers. The receiver laser is optically driven by injection from the transmitter laser. We have numerically investigated the response characteristics of the receiver when it is driven by periodic (message) and chaotic (carrier) signals. It is thereby revealed that the response of the receiver laser in the two cases is quite different. For the periodic drive, the receiver exhibits a response depending on the signal frequency, while the chaotic drive provides a frequency-independent synchronous response to the receiver laser. CPF can be clearly understood in the difference between the periodic and chaotic drives. Message extraction using CPF is also examined, and the validity of our theoretical explanation for the physical mechanism underlying CPF is thus verified.

  9. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  10. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    PubMed Central

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  11. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier

    NASA Astrophysics Data System (ADS)

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing.

  12. Reconfigurable Optical Signal Processing Based on a Distributed Feedback Semiconductor Optical Amplifier.

    PubMed

    Li, Ming; Deng, Ye; Tang, Jian; Sun, Shuqian; Yao, Jianping; Azaña, José; Zhu, Ninghua

    2016-01-01

    All-optical signal processing has been considered a solution to overcome the bandwidth and speed limitations imposed by conventional electronic-based systems. Over the last few years, an impressive range of all-optical signal processors have been proposed, but few of them come with reconfigurability, a feature highly needed for practical signal processing applications. Here we propose and experimentally demonstrate an analog optical signal processor based on a phase-shifted distributed feedback semiconductor optical amplifier (DFB-SOA) and an optical filter. The proposed analog optical signal processor can be reconfigured to perform signal processing functions including ordinary differential equation solving and temporal intensity differentiation. The reconfigurability is achieved by controlling the injection currents. Our demonstration provitdes a simple and effective solution for all-optical signal processing and computing. PMID:26813252

  13. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  14. Optical response functions of semiconductors: Nearly first-principles calculations

    SciTech Connect

    Zhong, H.

    1993-01-01

    The Local Density Approximation (LDA) and the one-electron perturbation theory is used to compute various optical properties of semiconductors, including the dielectric function, second-harmonic-generation-coefficients, photoelastic constants (characterizing the strain-induced birefrigence) and the optical-activity tensor (describing the differences in the optical response to left-handed and right-handed circularly polarized light). The calculation of the optical activity requires perturbation theory in the vector potential in order to describe the rotation of the plane of polarization perpendicular to the direction of propagation. The author contrasts this approach with scaler-perturbation theory which can be used for the other properties computed. Self-energy effects necessary to obtain the correct band gap are included by the use of a [open quotes]scissors operator[close quotes]. In addition, local-field corrections are included in the dielectric constants and second-harmonic-generation coefficients for selenium and [alpha]-quartz and the photoelastic constants for silicon (for photon frequencies below the band gap). Good agreement (discrepancies of the order of a few percent) is obtained with the experiments. The two components of the optical-activity tensor are computed for both selenium and [alpha]-quartz in the long-wavelength limit but local-field effects have been neglected in the absence of any appropriate formalism. For both materials the computed components are consistent with frequency dependence and relative sign of the phenomenological coupled-oscillator model. For selenium, in the low-frequency range the magnitude of the optical rotatory power, one component of the tensor, is factor of two too small compared with the experiment. For [alpha]-quartz the computed components are a factor of five smaller than the reported values. The possible contributions of local-field corrections and excitonic effects are discussed.

  15. All-optical mitigation of amplitude and phase-shift drift noise in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Rocha, Peterson; Gallep, Cristiano M.; Conforti, Evandro

    2015-10-01

    An all-optical scheme aimed at minimizing distortions induced by semiconductor optical amplifiers (SOAs) over modulated optical carriers is presented. The scheme employs an additional SOA properly biased to act as a saturated absorber, and thus counteract the distortions induced by the first amplifying device. The scheme here is demonstrated in silico, for 40 and 100 Gb/s (10 and 25 Gbaud, 16 QAM), with reasonable total gain (>20 dB) for symbol error rate below the forward error correction limit.

  16. Ultrafast all-optical NOR gate based on semiconductor optical amplifier and fiber delay interferometer

    NASA Astrophysics Data System (ADS)

    Xu, Jing; Zhang, Xinliang; Liu, Deming; Huang, Dexiu

    2006-10-01

    An ultrafast all-optical logic NOR gate based on a semiconductor optical amplifier (SOA) and a fiber delay interferometer (FDI) is presented. For high-speed input return-to-zero (RZ) signal, nonreturn-to-zero (NRZ) switching windows which satisfy Boolean NOR operation can be formed by properly choosing the delay time and the phase shift of FDI. 40Gb/s NOR operation has been demonstrated successfully with low control optical power. The factors that degrade the NOR operation have been discussed.

  17. Application of semiconductor optical amplifier for mobile radio communications networks based on radio-over-fiber systems

    NASA Astrophysics Data System (ADS)

    Andreev, Vladimir A.; Burdin, Vladimir A.; Volkov, Kirill A.; Dashkov, Michael V.; Bukashkin, Sergei A.; Buzov, Alexander L.; Procopiev, Vladimir I.; Zharkov, Alexander D.

    2016-03-01

    The analysis of semiconductor optical amplifier applications in Radio-over-Fiber systems of telecommunication networks is given. In such systems semiconductor optical amplifier can be used for either amplification, modulation or detection, and also as an universal device.

  18. Biologically inspired optics: analog semiconductor model of the beetle exoskeleton

    NASA Astrophysics Data System (ADS)

    Buhl, Kaia; Roth, Zachary; Srinivasan, Pradeep; Rumpf, Raymond; Johnson, Eric

    2008-08-01

    Evolution in nature has produced through adaptation a wide variety of distinctive optical structures in many life forms. For example, pigment differs greatly from the observed color of most beetles because their exoskeletons contain multilayer coatings. The green beetle is disguised in a surrounding leaf by having a comparable reflection spectrum as the leaves. The Manuka and June beetle have a concave structure where light incident at any angle on the concave structures produce matching reflection spectra. In this work, semiconductor processing methods were used to duplicate the structure of the beetle exoskeleton. This was achieved by combining analog lithography with a multilayer deposition process. The artificial exoskeleton, 3D concave multilayer structure, demonstrates a wide field of view with a unique spectral response. Studying and replicating these biologically inspired nanostructures may lead to new knowledge for fabrication and design of new and novel nano-photonic devices, as well as provide valuable insight to how such phenomenon is exploited.

  19. Optical Properties of III-Mn-V Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Burch, Kenneth

    2008-03-01

    We discuss the important role optical studies have played in our understanding of the electronic structure of III-Mn-V ferromagnetic semiconductors. These extensive studies have established the electronic structure is strongly affected by the strength of the exchange between the Mn local moments and the holes they introduce. Particular focus is given to Ga1-xMnxAs, where spectroscopic studies suggest the metallic state is unconventional. Finally, we will detail our recent experiments into the ultrafast manipulation of magnetism on the nanoscale. This work is in collaboration with D.B. Shrekenhamer, E.J. Singley, D.N. Basov (University of California, San Diego) J. Stephens, S. Mack, R.K. Kawakami, D.D. Awschalom(University of California, Santa Barbara), B.L. Sheu, N. Samarth (Pennsylvania State University), F. Chen, A. Azad, J. O'Hara, A.M. Dattelbaum, G. Montano, S. Crooker, and A.J. Taylor (Los Alamos National Laboratory).

  20. Investigation of the optical properties of ordered semiconductor materials

    NASA Astrophysics Data System (ADS)

    McCrae, Jack E., Jr.

    1997-11-01

    Optical Studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs2. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 eV were found by low temperature (4 K) PL measurements. Strongly polarized PL was observed with the E field of the PL parallel to the material's c-axis. A polarization ratio as high as 6:1 was observed. PL on ZnGeP2 in the mid-IR revealed a previously unreported PL peak near 0.35 eV. PR measurements on CdCeAs2 allowed the estimation of the bandgap as a function of temperature. The low temperature bandgap proved to be lower than that reported for electroreflectance measurements on other samples of this compound. Hall effect measurements on CdGeAs2 reveals the dominant acceptor level lies about 120 meV above the valence band.

  1. All-optical switching in semiconductor-doped nonlinear fibers

    NASA Astrophysics Data System (ADS)

    Donkor, Eric

    1999-11-01

    Optical switching devices that can perform at picosecond to femtosecond speeds are on demand because of interest to develop multi-gigabit, multi-user, optical networks. Two fundamental design issues are the choice of nonlinear material as the active medium for the switch and the switching architecture. Wave guide based switches designed with silica fiber have demonstrated ultra-fast switching up to femtosecond speeds. Figure 1 shows the switching speed versus power-length product for different types of materials. At the two extremes are rare-earth doped, and silica. Rare-earth doped materials have the smallest power-length product of about 10 W-cm, but also have the least switching speed. At the other extreme, silica has the fastest switching speed of 1013 Hz but also has the largest power-length product of 6 kW-cm. Semiconductor-doped glasses (SDG) and metal-doped glasses appear to have a good compromise between switching speed and power-length product. There is therefore interest to research such optical materials, and novel switching architectures that can simultaneously down-scale device geometry, and power requirements for switching.

  2. Radiation-tolerant optical links for the ATLAS semiconductor tracker

    NASA Astrophysics Data System (ADS)

    Matheson, John; Charlton, David G.; Chu, Ming-lee; Dowell, John D.; Galagedera, Senerath; Homer, Roger J.; Hou, Li-Shing; Jovanovic, Predrag; Kundu, Nikhil N.; Lee, Shih-chang; McMahon, Thomas J.; Macwaters, Craig; Mahout, Gilles; Morrissey, Martin; Rudge, Alan; Skubic, Bjorn J.; Teng, Ping-kun; Wastie, Roy; Weidberg, Anthony R.; Wilson, John A.

    2002-09-01

    The Large Hadron Collider (LHC), currently under construction at CERN, Geneva, will collide proton beams of energy 7 TeV. The high luminosity of the machine will lead to a severe radiation environment for detectors such as ATLAS. The ATLAS Semiconductor Tracker (SCT) must be able to tolerate a radiation field equivalent to an ionising dose of 10 Mrad (Si) and a neutron fluence of 2x1014cm-2 (1MeV,Si) over the 10 year lifetime of the experiment. The SCT is instrumented by silicon microstrip detectors and their front-end chips (ABCDs). Data is transferred from, and control signals to, the ABCDs using multimode optical links carrying light at 840 nm. The incoming timing, trigger and control (TTC) link uses biphase mark encoding to send 40 Mbit/s control signals along with a 40 MHz clock down a single fibre. Optical signals are received by a p-i-n diode and decoded by DORIC chips. Data in electrical form from the ABCDs is used to moderate two VCSELs by means of a VCSEL driver chip (VDC). Each detector module carries 12 ABCDs and is served by two optical fibres for data readout and one for TTC signals. There are 4088 such modules within the SCT. The system performance specifications and architecture are described, followed by test results on individual components and complete links. The optical fibre, active optical components, chips, packaging and interconnects have all been qualified to the necessary radiation levels. This has involved studies of total dose effects, single event upset and ageing at elevated temperatures and details of these studies are presented.

  3. All-semiconductor metamaterial-based optical circuit board at the microscale

    SciTech Connect

    Min, Li; Huang, Lirong

    2015-07-07

    The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

  4. Optical Frequency Combs From Semiconductor Lasers and Applications in Ultrawideband Signal Processing and Communications

    NASA Astrophysics Data System (ADS)

    Delfyett, Peter J.; Gee, Sangyoun; Choi, Myoung-Taek; Izadpanah, Hossein; Lee, Wangkuen; Ozharar, Sarper; Quinlan, Franklyn; Yilmaz, Tolga

    2006-07-01

    Modelocked semiconductor lasers are used to generate a set of phase-locked optical frequencies on a periodic grid. The periodic and phase coherent nature of the optical frequency combs makes it possible for the realization of high-performance optical and RF arbitrary-waveform synthesis. In addition, the resulting optical frequency components can be used for communication applications relying on direct detection, dense wavelength division multiplexing (WDM), coherent-detection WDM, optical time-division multiplexing, and optical code division multiple access. This paper highlights the recent results in the use of optical frequency combs generated from semiconductors for ultrawideband signal processing and communication applications.

  5. Electro- and magneto-optic properties of photorefractive semiconductors

    NASA Astrophysics Data System (ADS)

    Dinu, Mihaela

    The photorefractive effect is a low intensity, nonlocal optical nonlinearity which has been studied extensively because of its potential uses. Photorefractive quantum wells exhibit record sensitivities and speeds, and are prime candidates for optical processing applications, both in the spatial (for images) and in the time domain (for the shaping of femtosecond pulses). For this latter application, multiple quantum well devices have to overcome a large bandwidth mismatch with femtosecond pulses, which arises from the resonant nature of photorefractivity at the bandgap. By engineering the excitonic transition spectrum of multiple quantum wells, the bandwidth of photorefractive multiple quantum well devices is increased to match that of ultrafast pulses. In superlattices, breaking of the spatial periodicity leads to the emergence of a wide distribution of critical points and transition energies; we have explored the effect of quasiperiodicity in Fibonacci superlattices, where excitonic interactions concentrate the oscillator strength at low energies and limit the useful diffractive bandwidth. Multiple quantum well structures in which the quantum wells are isolated and the quantum confinement can be tuned along the thickness of the device offer a wide parameter space for bandwidth design. In quantum well devices, almost dispersion-free diffraction can be achieved due to the Kramers-Kronig relationship between the real and imaginary parts of the electro-refraction, which makes the phase of the diffracted pulse linear in frequency. The second part of the thesis concentrates on the photorefractive effect in diluted magnetic semiconductors. In ZnMnSe epilayers, we demonstrate resonant photorefractive diffraction in the blue spectral region. Wide-gap II-VI semiconductors have characteristic properties (such as high absorption coefficients at the gap and low sensitivity to electric fields) which make the fabrication of resonant photorefractive devices in the transverse

  6. Non-adiabatic effects on the optical response of driven systems

    NASA Astrophysics Data System (ADS)

    Fregoso, Benjamin M.; Kolodrubetz, Michael; Moore, Joel

    Periodically driven systems have received renewed interest due to their capacity to engineer non-trivial effective Hamiltonians. A characteristic of such systems is how they respond to weak periodicity-breaking drive, as for example when a laser is pulsed instead of continuous wave. We develop semi-classical equations of motion of a wave packet in the presence of electric and magnetic fields which are turned on non-adiabatically. We then show the emergence of significant corrections to electronic collective excitations and optical responses of topological insulator surface states, Weyl metals and semiconductor mono-chalcogenides.

  7. Progress toward traceable nanoscale optical critical dimension metrology for semiconductors

    NASA Astrophysics Data System (ADS)

    Patrick, Heather J.; Germer, Thomas A.

    2007-09-01

    Non-imaging optical critical dimension (OCD) techniques have rapidly become a preferred method for measuring nanoscale features in semiconductors. OCD relies upon the measurement of an optical reflectance signature from a grating target as a function of angle, wavelength and/or polarization. By comparing the signature with theoretical simulations, parameters of the grating lines such as critical dimension (CD) linewidth, sidewall angle, and line height can be obtained. Although the method is sensitive and highly repeatable, there are many issues to be addressed before OCD can be considered a traceable metrology. We report on progress towards accurate, traceable measurement, modeling, and analysis of OCD signatures collected on the NIST goniometric optical scatter instrument (GOSI), focusing on recent results from grating targets fabricated using the single-crystal critical dimension reference materials (SCCDRM) process. While we demonstrate good correlation between linewidth extracted from OCD and that measured by scanning electron microscopy (SEM), we also find systematic deviations between the experimentally obtained optical signatures and best fit theoretical signatures that limit our ability to determine uncertainty in OCD linewidth. We then use the SCCDRM line profile model and a χ2 goodness-of-fit analysis on simulated signatures to demonstrate the theoretical confidence limits for the grating line parameters in the case of normally distributed noise. This analysis shows that for the current SCCDRM implementation, line height and oxide layer undercut are highly correlated parameters, and that the 3-σ confidence limits in extracted linewidth depend on the target pitch. Prospects for traceable OCD metrology will be discussed.

  8. High speed all-optical encryption and decryption using quantum dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Li, Wenbo; Hu, Hongyu; Dutta, Niloy K.

    2013-11-01

    A scheme to realize high speed all-optical encryption and decryption using key-stream generators and an XOR gate based on quantum dot semiconductor optical amplifiers (QD-SOAs) was studied. The key used for encryption and decryption is a high speed all-optical pseudorandom bit sequence (PRBS) which is generated by a linear feedback shift register (LFSR) composed of QD-SOA-based logic XOR and AND gates. Two other kinds of more secure key-stream generators, i.e. cascaded design and parallel design, were also designed and investigated. Nonlinear dynamics including carrier heating and spectral hole-burning in the QD-SOA are taken into account together with the rate equations in order to realize all-optical logic operations. Results show that this scheme can realize all-optical encryption and decryption by using key-stream generators at high speed (~250 Gb/s).

  9. An optically-triggered semiconductor switch for high power laser beams

    SciTech Connect

    Chow, Weng W.; Warren, M.E.

    1995-04-01

    The work involves research leading to an optically triggered switch for a high power laser pulse. The switch uses a semiconductor heterostructure whose optical properties are modified by a low power laser trigger such as a laser diode. Potential applications include optical control of pulsed power systems, control of medical lasers and implementation of security features in optical warhead architectures.

  10. Implantable micro-optical semiconductor devices for optical theranostics in deep tissue

    NASA Astrophysics Data System (ADS)

    Takehara, Hiroaki; Katsuragi, Yuji; Ohta, Yasumi; Motoyama, Mayumi; Takehara, Hironari; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Ohta, Jun

    2016-04-01

    Optical therapy and diagnostics using photoactivatable molecular tools are promising approaches in medical applications; however, a method for the delivery of light deep inside biological tissues remains a challenge. Here, we present a method of illumination and detection of light using implantable micro-optical semiconductor devices. Unlike in conventional transdermal light delivery methods using low-energy light (>620 nm or near-infrared light), in our method, high-energy light (470 nm) can also be used for illumination. Implanted submillimeter-sized light-emitting diodes were found to provide sufficient illumination (0.6-4.1 mW/cm2), and a complementary metal-oxide-semiconductor image sensor enabled the detection of fluorescence signals.

  11. High speed all-optical data processing in fast semiconductor and optical fiber based devices

    NASA Astrophysics Data System (ADS)

    Sun, Hongzhi

    Future generations of communication systems demand ultra high speed data processing and switching components. Conventional electrical parts have reached their bottleneck both speed-wise and efficiency-wise. The idea of manipulating high speed data in optical domain is gaining more popularity. In this PhD thesis work, we proposed and demonstrated various schemes of all-optical Boolean logic gate at data rate as high as 80Gb/s by using semiconductor optical amplifier (SOA), SOA Mach-Zehnder interferometer (SOA-MZI), highly nonlinear fiber (HNLF) and optical fiber based components. With the invention of quantum dot (QD) based semiconductor devices, speed limit of all optical data processing has a chance to boost up to 250Gb/s. We proposed and simulated QD-SOA based Boolean functions, and their application such as shift register and pseudorandom bit sequence generation (PRBS). Clock and data recovery of high speed data signals has been simulated and demonstrated by injection lock and phase lock loop techniques in a fiber and SOA ring and an optical-electrical (OE) feedback loop.

  12. Optical Nonlinearities in Semiconductor Doped Glass Channel Waveguides.

    NASA Astrophysics Data System (ADS)

    Banyai, William Charles

    The nonlinear optical properties of a semiconductor -doped glass (SDG) channel waveguide were measured on a picosecond time-scale; namely, fluence-dependent changes in the absorption and the refractive index as well as the relaxation time of the nonlinearity. Slower, thermally -induced changes in the refractive index were also observed. The saturation of the changes in the absorption and the refractive index with increasing optical fluence is explained using a plasma model with bandfilling as the dominant mechanism. The fast relaxation time of the excited electron-hole plasma (20 ps) is explained using a surface-state recombination model. A figure of merit for a nonlinear directional coupler fabricated in a material with a saturable nonlinear refractive index is presented. The measured nonlinear change in the refractive index of the SDG saturates below the value required to effect fluence-dependent switching in a nonlinear directional coupler. Experiments with a channel-waveguide directional coupler support this prediction. However, absorption switching due to differential saturation of the absorption in the two arms of the directional coupler was observed.

  13. Dissipation-Induced Symmetry Breaking in a Driven Optical Lattice

    SciTech Connect

    Gommers, R.; Bergamini, S.; Renzoni, F.

    2005-08-12

    We analyze the atomic dynamics in an ac driven periodic optical potential which is symmetric in both time and space. We experimentally demonstrate that in the presence of dissipation the symmetry is broken, and a current of atoms through the optical lattice is generated as a result.

  14. Growth, structure, and optical characterization of diluted magnetic semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Cooley, Benjamin Joseph

    Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new field of research that seeks to exploit electron spin within electronic and opto-electronic semiconductor devices. While much of the effort within semiconductor spintronics has been directed toward fundamental studies and applications of 3D, 2D and 0D systems, there has been little work to date on 1D systems. The distinctive change in the electronic density of states with changing dimensionality provides a strong motivation for developing and exploring semiconductor nanowires in which one might be able to probe and control spin-dependent phenomena within a 1D or quasi-1D environment. This thesis explores the crystal growth, structural properties and magneto-optical behavior of quasi-1D semiconductor nanowires in which we incorporate magnetism through two approaches: first, by synthesizing nanowires of the diluted magnetic semiconductor (Zn,Mn)Se, wherein the d-shell electrons of substitutional Mn ions interact with the band states of the ZnSe host lattice via sp--d exchange; second, by making hybrid core-shell nanostructures wherein a metallic ferromagnetic shell (MnAs) is epitaxially deposited on a semiconductor nanowire (GaAs). After an introductory overview of past work in the field and a description of the experimental techniques relevant to the thesis, we discuss our experimental results. The first set of experiments focuses on ZnSe and (Zn,Mn)Se nanowires grown in a single stage. The nanowires were grown on Si and GaAs substrates with a thin layer of gold evaporated onto them, which were then annealed before growth so that the gold formed nanoscale droplets. The growth yields samples covered in random arrays of nanowires growing out an an angle to the substrate, with an undergrowth of crooked nanowires and other small structures. The long thin nanowires vary in diameter, down to

  15. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  16. Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

    DOEpatents

    Duncan, Paul G.

    2002-01-01

    Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

  17. Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Shouting

    Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

  18. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGESBeta

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  19. Continuously Controlled Optical Band Gap in Oxide Semiconductor Thin Films.

    PubMed

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-03-01

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. Charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques. PMID:26836282

  20. Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Abe, Katsumi; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo

    2012-08-01

    We fabricated transparent amorphous oxide semiconductor superlattices composed of In-Ga-Zn-O (a-IGZO) well layers and Ga2O3 (a-Ga2O3) barrier layers, and investigated their optical absorption properties to examine energy quantization in the a-IGZO well layer. The Tauc gap of a-IGZO well layers monotonically increases with decreasing well thickness at ≤5 nm. The thickness dependence of the Tauc gap is quantitatively explained by a Krönig-Penny model employing a conduction band offset of 1.2 eV between the a-IGZO and the a-Ga2O3, and the effective masses of 0.35m0 for the a-IGZO well layer and 0.5m0 for the a-Ga2O3 barrier layer, where m0 is the electron rest mass. This result demonstrates the quantization in the a-IGZO well layer. The phase relaxation length of the a-IGZO is estimated to be larger than 3.5 nm.

  1. Optical Probe for Semiconductor: Cooperative Research and Development Final Report, CRADA Number CRD-06-206

    SciTech Connect

    Sopori, B.

    2011-02-01

    This CRADA involves development of a new semiconductor characterization tool, Optical Probe, which can be commercialized by GT Solar. GT Solar will participate in the design and testing of this instrument that will be developed under an IPP project.

  2. Cell Signaling Experiments Driven by Optical Manipulation

    PubMed Central

    Difato, Francesco; Pinato, Giulietta; Cojoc, Dan

    2013-01-01

    Cell signaling involves complex transduction mechanisms in which information released by nearby cells or extracellular cues are transmitted to the cell, regulating fundamental cellular activities. Understanding such mechanisms requires cell stimulation with precise control of low numbers of active molecules at high spatial and temporal resolution under physiological conditions. Optical manipulation techniques, such as optical tweezing, mechanical stress probing or nano-ablation, allow handling of probes and sub-cellular elements with nanometric and millisecond resolution. PicoNewton forces, such as those involved in cell motility or intracellular activity, can be measured with femtoNewton sensitivity while controlling the biochemical environment. Recent technical achievements in optical manipulation have new potentials, such as exploring the actions of individual molecules within living cells. Here, we review the progress in optical manipulation techniques for single-cell experiments, with a focus on force probing, cell mechanical stimulation and the local delivery of active molecules using optically manipulated micro-vectors and laser dissection. PMID:23698758

  3. Laser-driven polyplanar optic display

    SciTech Connect

    Veligdan, J.T.; Biscardi, C.; Brewster, C.; DeSanto, L.; Beiser, L.

    1998-01-01

    The Polyplanar Optical Display (POD) is a unique display screen which can be used with any projection source. This display screen is 2 inches thick and has a matte-black face which allows for high contrast images. The prototype being developed is a form, fit and functional replacement display for the B-52 aircraft which uses a monochrome ten-inch display. The new display uses a 200 milliwatt green solid-state laser (532 nm) as its optical source. In order to produce real-time video, the laser light is being modulated by a Digital Light Processing (DLP) chip manufactured by Texas Instruments, Inc. A variable astigmatic focusing system is used to produce a stigmatic image on the viewing face of the POD. In addition to the optical design, the authors discuss the DLP chip, the optomechanical design and viewing angle characteristics.

  4. Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface

    NASA Astrophysics Data System (ADS)

    Monahan, Nicholas R.; Williams, Kristopher W.; Kumar, Bharat; Nuckolls, Colin; Zhu, X.-Y.

    2015-06-01

    How an electron-hole pair escapes the Coulomb potential at a donor-acceptor interface has been a key issue in organic photovoltaic research. Recent evidence suggests that long-distance charge separation can occur on ultrafast time scales, yet the underlying mechanism remains unclear. Here we use charge transfer excitons (CTEs) across an organic semiconductor-vacuum interface as a model and show that nascent hot CTEs can spontaneously climb up the Coulomb potential within 100 fs. This process is driven by entropic gain due to the rapid rise in density of states with increasing electron-hole separation. In contrast, the lowest CTE cannot delocalize, but undergoes self-trapping and recombination.

  5. Direct Observation of Entropy-Driven Electron-Hole Pair Separation at an Organic Semiconductor Interface.

    PubMed

    Monahan, Nicholas R; Williams, Kristopher W; Kumar, Bharat; Nuckolls, Colin; Zhu, X-Y

    2015-06-19

    How an electron-hole pair escapes the Coulomb potential at a donor-acceptor interface has been a key issue in organic photovoltaic research. Recent evidence suggests that long-distance charge separation can occur on ultrafast time scales, yet the underlying mechanism remains unclear. Here we use charge transfer excitons (CTEs) across an organic semiconductor-vacuum interface as a model and show that nascent hot CTEs can spontaneously climb up the Coulomb potential within 100 fs. This process is driven by entropic gain due to the rapid rise in density of states with increasing electron-hole separation. In contrast, the lowest CTE cannot delocalize, but undergoes self-trapping and recombination. PMID:26196998

  6. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    SciTech Connect

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-12-31

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process.

  7. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  8. Optically driven bacterial screw of Archimedes

    NASA Astrophysics Data System (ADS)

    Robbins, J. R.; Tierney, D. A.; Schmitzer, H.

    2006-01-01

    The linear momentum transfer from photons to asymmetrically shaped structures generates an optomechanical rotation, but these micron-sized structures require costly, high-precision fabrication. Nature, however, provides a great diversity of engineered forms and dead, but rigid, asymmetrically shaped bacteria can provide a low cost alternative. In this work, we show that helical bacteria rotate very quickly in optical tweezers. Their rotation is fast enough to create a strong whirl, such that they may act as micropumps in thin capillaries.

  9. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  10. Optically monostable operation of a monolithic semiconductor ring laser using external optical injections

    NASA Astrophysics Data System (ADS)

    Wang, Zhuoran; Yuan, Guohui; Yu, Siyuan; Giuliani, Guido; Furst, Sandor; Sorel, Marc

    2007-11-01

    The semiconductor ring laser (SRL) is attracting more and more interest as a potential all-optical logic device. Whilst previous operations used electrical modulation to induce switching, for all-optical applications such as all optical switching, regeneration, and optical memory it is necessary to switch using an external optical signal. When operated as a monostable way at 110 mA (just above the threshold of 80 mA) where the device operates in the bidirectional regime, SRL should also be dynamically forced to work in clockwise (CW) and anticlockwise (CCW) directions depending on the external injection direction. In this paper the response characteristics of SRL to external optical injection which fed into SRL by CCW direction are investigated. Both output directions have highly nonlinear relationship with injection signal power and their responses are highly digital. This operation is also simulated in both directions and the agreement with experiment is very good apart from the injection power scale. This confirms that the SRL power is constant above a certain injection power level in both on and off directions, which can be further verified by future devices with 2 couplers.

  11. Optoelectronic device simulation: Optical modeling for semiconductor optical amplifiers and solid state lighting

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Xue (Michael)

    2006-07-01

    Recent advances in optoelectronic devices require sophisticated optical simulation and modeling. These tiny semiconductor device structures, such as semiconductor lasers and light emitting diodes (LED), not only need detailed electrical computation, such as band structure, carrier transportation, and electron-hole recombination under different external voltages, but also require comprehensive optical modeling, such as photon generation and propagation. Optical modeling also includes waveguide structure calculations, guided mode and leakage mode identification, as well far-field pattern prediction using optical ray tracing. In modeling semiconductor lasers, light emission and propagation can be treated using the single mode of wave optics, the so-called photon propagation equation coupled with carrier transport equations. These differential equations can be numerically solved using the Finite Difference Method (FDM). In the LED modeling, the main tools are based on optical ray tracing, and photons are treated as light emissions with random directions and polarizations. Optical waveguide theory is used to qualitatively analyze photon emissions inside a LED chip, and helps to design the LED device structure. One important area of semiconductor laser modeling is the optical simulation of the wavelength converter based on semiconductor optical amplifiers (SOA). This wavelength converter is a critical device in optical communication, and it can copy information from one wavelength to anther through cross-gain modulation. Some numerical methods have been developed to model the wavelength conversion. In these methods, solutions are found by solving differential equations in the time domain using FDM. In all previous models, the waveguide internal loss is assumed uniform across the cavity of the SOA, or the gain coefficient is based on the polynomial approximation method, i.e., the gain coefficient is assumed proportional to the difference between the carrier and

  12. Tunable optical delay via carrier induced exciton dephasing in semiconductor quantum wells.

    PubMed

    Sarkar, Susanta; Guo, Yan; Wang, Hailin

    2006-04-01

    We report the experimental realization of a tunable optical delay by exploiting unique incoherent nonlinear optical processes in semiconductors. The tunable optical delay takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well structure. Tunable optical delay based on optical injection of free carriers avoids strong absorption of the pump beam and is also robust against variations in the frequency of the pump beam. PMID:19516421

  13. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

    2016-04-01

    A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

  14. Optically driven quantum dots as source of coherent cavity phonons: a proposal for a phonon laser scheme.

    PubMed

    Kabuss, Julia; Carmele, Alexander; Brandes, Tobias; Knorr, Andreas

    2012-08-01

    We present a microscopically based scheme for the generation of coherent cavity phonons (phonon laser) by an optically driven semiconductor quantum dot coupled to a THz acoustic nanocavity. External laser pump light on an anti-Stokes resonance creates an effective Lambda system within a two-level dot that leads to coherent phonon statistics. We use an inductive equation of motion method to estimate a realistic parameter range for an experimental realization of such phonon lasers. This scheme for the creation of nonequilibrium phonons is robust with respect to radiative and phononic damping and only requires optical Rabi frequencies of the order of the electron-phonon coupling strength. PMID:23006175

  15. All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

    NASA Astrophysics Data System (ADS)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-05-01

    Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

  16. Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

    NASA Astrophysics Data System (ADS)

    Persano Adorno, Dominique; Pizzolato, Nicola; Fazio, Claudio

    2015-09-01

    Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

  17. Plasmon-optical phonon hybridization in polar semiconductor nano-wires

    NASA Astrophysics Data System (ADS)

    Moradi, Afshin

    2013-12-01

    The hybridization of the plasmon oscillations with the optical phonon waves in cylindrical polar semiconductor nano-wires is investigated. A simple model based on the hydrodynamic theory in conjunction with the Poisson's equation is proposed. An explicit form of the dispersion relation for hybridized surface plasmon-optical phonon modes of the system is derived.

  18. Formation and all-optical control of optical patterns in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Binder, R.; Tsang, C. Y.; Tse, Y. C.; Luk, M. H.; Kwong, N. H.; Chan, Chris K. P.; Leung, P. T.; Lewandowski, P.; Schumacher, Stefan; Lafont, O.; Baudin, E.; Tignon, J.

    2016-05-01

    Semiconductor microcavities offer a unique way to combine transient all-optical manipulation of GaAs quantum wells with the benefits of structural advantages of microcavities. In these systems, exciton-polaritons have dispersion relations with very small effective masses. This has enabled prominent effects, for example polaritonic Bose condensation, but it can also be exploited for the design of all-optical communication devices. The latter involves non-equilibrium phase transitions in the spatial arrangement of exciton-polaritons. We consider the case of optical pumping with normal incidence, yielding a spatially homogeneous distribution of exciton-polaritons in optical cavities containing the quantum wells. Exciton-exciton interactions can trigger instabilities if certain threshold behavior requirements are met. Such instabilities can lead, for example, to the spontaneous formation of hexagonal polariton lattices (corresponding to six-spot patterns in the far field), or to rolls (corresponding to two-spot far field patterns). The competition among these patterns can be controlled to a certain degree by applying control beams. In this paper, we summarize the theory of pattern formation and election in microcavities and illustrate the switching between patterns via simulation results.

  19. Time-resolved chirp properties of semiconductor optical amplifiers in high-speed all-optical switches

    NASA Astrophysics Data System (ADS)

    Chen, Ligong; Lu, Rongguo; Zhang, Shangjian; Li, Jianfeng; Liu, Yong

    2013-03-01

    The chirp properties of semiconductor optical amplifiers in all-optical switches are numerically investigated using a field propagation model. The chirp dynamics in the blue-shift and red-shift sideband are analyzed under the injection of random optical pump pulses. We also analyze the impact of the blue-detuned filtering scheme that is used to eliminate the pattern effect and enhance the operating speed of the optical switching. The reason for overshoots in eye diagrams in the blue-detuned filtering scheme is explained. We find that overshoots result from the ultrafast blue chirp induced by carrier heating and two-phonon absorption. These results are very useful for semiconductor optical amplifier-based ultrafast all-optical signal processing.

  20. Optically enhanced oxidation of III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Fukuda, Mitsuo; Takahei, Kenichiro

    1985-01-01

    Oxidation of III-V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off

  1. Wide Tuning Range Wavelength-Swept Laser With Two Semiconductor Optical Amplifiers

    PubMed Central

    Oh, W. Y.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2010-01-01

    We demonstrate a wide tuning range high-speed wavelength-swept semiconductor laser based on a polygon scanning filter that is common to two laser cavities. Linear wavelength tuning was achieved over 145 nm around 1310 nm at a tuning repetition rate of 20 kHz. The wavelength tuning filter is expandable to accommodate multiple semiconductor optical amplifiers for further widening of the laser wavelength tuning range. PMID:20651947

  2. Carbon nanotube mode-locked optically-pumped semiconductor disk laser.

    PubMed

    Seger, K; Meiser, N; Choi, S Y; Jung, B H; Yeom, D-I; Rotermund, F; Okhotnikov, O; Laurell, F; Pasiskevicius, V

    2013-07-29

    An optically pumped semiconductor disk laser was mode-locked for the first time by employing a single-walled carbon nanotube saturable absorber. Stable passive fundamental mode-locking was obtained at a repetition rate of 613 MHz with a pulse length of 1.23 ps. The mode-locked semiconductor disk laser in a compact geometry delivered a maximum average output power of 136 mW at 1074 nm. PMID:23938653

  3. Formation of Nanoscale Composites of Compound Semiconductors Driven by Charge Transfer.

    PubMed

    Gao, Weiwei; Dos Reis, Roberto; Schelhas, Laura T; Pool, Vanessa L; Toney, Michael F; Yu, Kin Man; Walukiewicz, Wladek

    2016-08-10

    Composites are a class of materials that are formed by mixing two or more components. These materials often have new functional properties compared to their constituent materials. Traditionally composites are formed by self-assembly due to structural dissimilarities or by engineering different layers or structures in the material. Here we report the synthesis of a uniform and stoichiometric composite of CdO and SnTe with a novel nanocomposite structure stabilized by the dissimilarity of the electronic band structure of the constituent materials. The composite has interesting electronic properties which range from highly n-type in CdO to semi-insulating in the intermediate composition range to highly p-type in SnTe. This can be explained by the overlap of the conduction and valence band of the constituent compounds. Ultimately, our work identifies a new class of composite semiconductors in which nanoscale self-organization is driven and stabilized by charge transfer between constituent materials. PMID:27459505

  4. Distributed fibre optic strain measurements on a driven pile

    NASA Astrophysics Data System (ADS)

    Woschitz, Helmut; Monsberger, Christoph; Hayden, Martin

    2016-05-01

    In civil engineering pile systems are used in unstable areas as a foundation of buildings or other structures. Among other parameters, the load capacity of the piles depends on their length. A better understanding of the mechanism of load-transfer to the soil would allow selective optimisation of the system. Thereby, the strain variations along the loaded pile are of major interest. In this paper, we report about a field trial using an optical backscatter reflectometer for distributed fibre-optic strain measurements along a driven pile. The most significant results gathered in a field trial with artificial pile loadings are presented. Calibration results show the performance of the fibre-optic system with variations in the strain-optic coefficient.

  5. Fully tunable 360° microwave photonic phase shifter based on a single semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2011-08-01

    A fully tunable microwave photonic phase shifter involving a single semiconductor optical amplifier (SOA) is proposed and demonstrated. 360° microwave phase shift has been achieved by tuning the carrier wavelength and the optical input power injected in an SOA while properly profiting from the dispersion feature of a conveniently designed notch filter. It is shown that the optical filter can be advantageously employed to switch between positive and negative microwave phase shifts. Numerical calculations corroborate the experimental results showing an excellent agreement.

  6. An analytical study on bistability of Fabry Perot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wang, Gang; Chen, Shuqiang; Yang, Huajun

    2016-06-01

    Optical bistabilities have been considered to be useful for sensor applications. As a typical nonlinear device, Fabry-Perot semiconductor optical amplifiers (FPSOAs) exhibit bistability under certain conditions. In this paper, the bistable characteristics in FPSOAs are investigated theoretically. Based on Adams's relationship between the incident optical intensity I in and the z-independent average intracavity intensity I av, an analytical expression of the bistable loop width in SOAs is derived. Numerical simulations confirm the accuracy of the analytical result.

  7. Flexible quadrature amplitude modulation with semiconductor optical amplifier and electroabsorption modulator.

    PubMed

    Schrenk, Bernhard; Dris, Stefanos; Bakopoulos, Paraskevas; Lazarou, Ioannis; Voigt, Karsten; Zimmermann, Lars; Avramopoulos, Hercules

    2012-08-01

    Optical quadrature amplitude modulation (QAM) is experimentally demonstrated with a low-complexity modulator based on a semiconductor optical amplifier and electroabsorption modulator. Flexible amplitude/phase format transmission is achieved. The applicability of octary QAM for coherent optical access networks with sustainable 3 Gb/s per-user bandwidth is investigated for a long reach of 100 km, and its compatibility with a potentially high split is verified. PMID:22859139

  8. Monolithic semiconductor mid-IR optical parametric oscillators with modal phase matching

    NASA Astrophysics Data System (ADS)

    Lammert, R. M.; Oh, S. W.; Osowski, M. L.; Panja, C.; Rudy, P. T.; Stakelon, T.; Ungar, J. E.

    2006-05-01

    We present theoretical analysis and experimental data from a monolithic semiconductor laser and optical parametric oscillator device which generates near-infrared laser beam and converts it to a longer mid-infrared wavelength by modal phase matching. The device design exploits the strong optical nonlinearity and transparency of III-V compound semiconductors while achieving phase matching of the near-infrared pump beam to the mid-infrared product beam(s). These devices have the potential to dramatically improve the CW Mid-IR power available at room temperature from monolithic semiconductor lasers, making them ideal for a broad range of applications including infrared countermeasures, detecting chemical weapons, imaging, and fog-penetrating optical communications.

  9. Size limitations and gain optimization in semiconductor-optical-amplifier-based optical space switches

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Huang, Dexiu; Liu, Deming

    2002-08-01

    The cascadability of Semiconductor optical amplifier (SOA) gates and the size limitations for several kinds of switch architectures based on SOA's are studied theoretically. The analysis shows that the sizes of matrix-vector switches are severely limited owing to the splitting losses, waveguide losses and coupling losses. However for distributed gain matrix-vector switch and Benes switch, the accumulation of amplified spontaneous emission (ASE) noise and non-ideal extinction ratio also greatly influence the maximal sizes of switches. The calculation results also reveal that the gain optimum strategy for switches based on SOA's, which derived from steady state analysis, will not be optimum when non-ideal extinction ratio and dynamical gain saturation is considered

  10. Optical characterization of wide-gap detector-grade semiconductors

    NASA Astrophysics Data System (ADS)

    Elshazly, Ezzat S.

    Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a

  11. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  12. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  13. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  14. Optically induced transport through semiconductor-based molecular electronics

    NASA Astrophysics Data System (ADS)

    Li, Guangqi; Fainberg, Boris D.; Seideman, Tamar

    2015-04-01

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  15. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  16. Large optical power margin of signal light in OFDR-OCT by using semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Asaka, Kota

    2008-02-01

    We demonstrate a sensitivity improvement in an optical frequency domain reflectometry-optical coherence tomography (OFDR-OCT) system with a discretely swept light source by incorporating a semiconductor optical amplifier (SOA) in a sample arm. With the system, we achieve a high sensitivity of -134.4 dB when we measure the reflective mirror with an A-line rate of 0.25 kHz. This improves the sensitivity (-125.2 dB) by 9.2 dB compared with a system without the SOA. The OCT system without the SOA shows a signal-to-noise ratio (SNR) of 56 dB when the signal light power is attenuated by about 66 dB, and the SNRs of less than 56 dB are obtained at higher attenuation levels. However, an SOA-incorporated OCT system provides the SNR of 56 dB at the much higher attenuation level of 86 dB. This means that using the SOA offers the large signal light power margin of 20 dB needed to obtain SNR of 56 dB. It is shown that the power margin is qualitatively dependent on the optical gain of the SOA. From an experimental analysis of the noises in the SOA-incorporated system, we found that the sensitivity enhancement is mainly limited by the beat noise between the reference light and the amplified spontaneous emission (ASE) of the SOA. We obtained images that show clear cluster structures of enamel crystals near the dentin-enamel junction of an extracted human tooth with our SOA-incorporated discretely swept OFDR-OCT imaging, revealing the potential to achieve a high-speed OCT system with high sensitivity.

  17. Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

    PubMed

    Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

    2011-02-28

    A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication. PMID:21369207

  18. Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    1999-01-01

    Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

  19. All-optical format conversion using a periodically poled lithium niobate waveguide and a reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Wang, Jian; Sun, Junqiang; Sun, Qizhen; Wang, Dalin; Zhou, Minjuan; Zhang, Xinliang; Huang, Dexiu; Fejer, M. M.

    2007-07-01

    In the present letter, the authors report on the realization of all-optical format conversion by using the cascaded sum- and difference-frequency generation in a periodically poled lithium niobate waveguide and the active mode locking in a reflective-semiconductor-optical-amplifier-based fiber ring laser. Tunable format conversions from nonreturn-to-zero pseudorandom binary sequence (PRBS) signal to return-to-zero PRBS idler at 10 and 20Gbit/s are observed in the experiment.

  20. Analytical models of optical response in one-dimensional semiconductors

    NASA Astrophysics Data System (ADS)

    Pedersen, Thomas Garm

    2015-09-01

    The quantum mechanical description of the optical properties of crystalline materials typically requires extensive numerical computation. Including excitonic and non-perturbative field effects adds to the complexity. In one dimension, however, the analysis simplifies and optical spectra can be computed exactly. In this paper, we apply the Wannier exciton formalism to derive analytical expressions for the optical response in four cases of increasing complexity. Thus, we start from free carriers and, in turn, switch on electrostatic fields and electron-hole attraction and, finally, analyze the combined influence of these effects. In addition, the optical response of impurity-localized excitons is discussed.

  1. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  2. Transparent ceramic photo-optical semiconductor high power switches

    DOEpatents

    Werne, Roger W.; Sullivan, James S.; Landingham, Richard L.

    2016-01-19

    A photoconductive semiconductor switch according to one embodiment includes a structure of sintered nanoparticles of a high band gap material exhibiting a lower electrical resistance when excited by light relative to an electrical resistance thereof when not exposed to the light. A method according to one embodiment includes creating a mixture comprising particles, at least one dopant, and at least one solvent; adding the mixture to a mold; forming a green structure in the mold; and sintering the green structure to form a transparent ceramic. Additional system, methods and products are also presented.

  3. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, M. C.; Muggli, Patric; Yakimenko, Vitaly; Babzien, Marcus; Kusche, Karl; Fedurin, Mikhail

    2010-11-01

    Beam-driven plasma wakefield accelerators (PWFA), such as the ``plasma afterburner,'' are a promising approach for significantly increasing the particle energies of conventional accelerators. The study and optimization of PWFA would benefit from an experimental correlation between the parameters of the drive bunch, the accelerated bunch and the corresponding, accelerating plasma wave structure. However, the plasma wave structure has not yet been observed directly in PWFA. We will report our current work on noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) visualization of beam-driven plasma waves. Both techniques employ two laser pulses (probe and reference) co-propagating with the particle drive-beam and its plasma wake. The reference pulse precedes the drive bunch, while the probe overlaps the plasma wave and maps its longitudinal and transverse structure. The experiment is being developed at the BNL/ATF Linac to visualize wakes generated by two and multi-bunch drive beams.

  4. The dynamics of radiation-driven, optically thick winds

    NASA Astrophysics Data System (ADS)

    Shen, Rong-Feng; Nakar, Ehud; Piran, Tsvi

    2016-06-01

    Recent observation of some luminous transient sources with low colour temperatures suggests that the emission is dominated by optically thick winds driven by super-Eddington accretion. We present a general analytical theory of the dynamics of radiation pressure-driven, optically thick winds. Unlike the classical adiabatic stellar wind solution whose dynamics are solely determined by the sonic radius, here the loss of the radiation pressure due to photon diffusion also plays an important role. We identify two high mass-loss rate regimes (dot{M} > L_Edd/c^2). In the large total luminosity regime, the solution resembles an adiabatic wind solution. Both the radiative luminosity, L, and the kinetic luminosity, Lk, are super-Eddington with L < Lk and L ∝ L_k^{1/3}. In the lower total luminosity regime, most of the energy is carried out by the radiation with Lk < L ≈ LEdd. In a third, low mass-loss regime (dot{M} < L_Edd/c^2), the wind becomes optically thin early on and, unless gas pressure is important at this stage, the solution is very different from the adiabatic one. The results are independent from the energy generation mechanism at the foot of the wind; therefore, they are applicable to a wide range of mass ejection systems, from black hole accretion, to planetary nebulae, and to classical novae.

  5. Critical slowing down and critical exponents in LD/PIN optically-bistable semiconductor lasers

    SciTech Connect

    Zhong Lichen; Guo Yili

    1988-04-01

    Critical slowing down for LD/PIN bistable optical semiconductor lasers and the critical exponents ..gamma.. for this system have been experimentally investigated. The experimental value ..gamma..approx.0.53 is basically in agreement with the theoretically predicted value of 0.5.

  6. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    SciTech Connect

    Dersch, H.; Amer, N.M.

    1984-08-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented.

  7. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  8. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  9. Chaotic Transport in Semiconductor, Optical, and Cold-Atom Systems

    NASA Astrophysics Data System (ADS)

    Judd, T.; Henning, A.; Hardwick, D.; Scott, R.; Balanov, A.; Wilkinson, P.; Fowler, D.; Martin, A.; Fromhold, T.

    We show that the reflection of quantum-mechanical waves from semiconductor surfaces creates new regimes of nonlinear dynamics, which offer sensitive control of electrons and ultra-cold atoms. For electrons in superlattices, comprising alternating layers of different semiconductor materials, multiple reflections of electron waves from the layer interfaces induce a unique type of chaotic electron motion when a bias voltage and tilted magnetic field are applied. Changing the field parameters switches the chaos on and off abruptly, thus producing a sharp increase in the measured current flow by creating unbounded electron orbits. These orbits correspond to either intricate web patterns or attractors in phase space depending on the electron decoherence rate. We show that related dynamics provide a mechanism for controlling the transmission of electromagnetic waves through spatially-modulated photonic crystals. Finally, we consider the quantum dynamics of a Bose-Einstein condensate, comprising 120,000 rubidium atoms cooled to 10 nK, incident on a stadium billiard etched in a room-temperature silicon surface. Despite the huge temperature difference between the condensate and the billiard, quantum-mechanical reflection can shield the cold atoms from the disruptive influence of the surface, thus enabling the billiard to imprint signatures of single-particle classical trajectories in the collective motion of the reflected atom cloud.

  10. Floquet engineering with quasienergy bands of periodically driven optical lattices

    NASA Astrophysics Data System (ADS)

    Holthaus, Martin

    2016-01-01

    A primer on the Floquet theory of periodically time-dependent quantum systems is provided, and it is shown how to apply this framework for computing the quasienergy band structure governing the dynamics of ultracold atoms in driven optical cosine lattices. Such systems are viewed here as spatially and temporally periodic structures living in an extended Hilbert space, giving rise to spatio-temporal Bloch waves whose dispersion relations can be manipulated at will by exploiting ac-Stark shifts and multiphoton resonances. The elements required for numerical calculations are introduced in a tutorial manner, and some example calculations are discussed in detail, thereby illustrating future prospects of Floquet engineering.

  11. New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

    NASA Astrophysics Data System (ADS)

    Choy, Wallace C. H.

    2015-09-01

    As the intrinsic electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon which is fundamental important for organic semiconductors. We will demonstrate SCL breaking by a new plasmonic-electrical concept. As a proof-ofconcept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are studied. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating incorporated inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties. The plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.

  12. Phase solitons and domain dynamics in an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gustave, F.; Columbo, L.; Tissoni, G.; Brambilla, M.; Prati, F.; Barland, S.

    2016-06-01

    We analyze experimentally and theoretically the spatiotemporal dynamics of a highly multimode semiconductor laser with coherent optical injection. Due to the particular geometry of the device (a 1-m-long ring cavity), the multimode dynamics can be resolved in real time and we observe stable chiral solitons and domain dynamics. The experiment is analyzed in the framework of a set of effective semiconductor Maxwell-Bloch equations. We analyze the stability of stationary solutions and simulate both the complete model and a reduced rate equation model. This allows us to predict domain shrinking and the stability of only one chiral charge that we ascribe to the finite active medium response time.

  13. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  14. Wet-Chemically Synthesized Colloidal Semiconductor Nanostructures as Optical Gain Media.

    PubMed

    Ong, Xuanwei; Zhi, Min; Gupta, Shashank; Chan, Yinthai

    2016-03-01

    An overview on the development of wet-chemically synthesized semiconductor nanostructures as optical gain materials is presented in this Review, beginning with the first demonstration of amplified spontaneous emission in zero-dimensional quantum dots and evolving to more sophisticated heterostructures such as one-dimensional core-seeded nanorods, branched core-seeded tetrapods and two-dimensional nanoplatelets. The advantages and challenges of utilizing strongly quantum-confined colloidal semiconductor materials as gain media are discussed, and a concerted effort is made to elaborate on how the progression towards more structurally complex architectures has allowed for dramatic improvements in performance and stability over the archetypal quantum dot. PMID:26822201

  15. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

    PubMed

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  16. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    NASA Astrophysics Data System (ADS)

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-06-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

  17. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  18. Low-temperature optical processing of semiconductor devices using photon effects

    SciTech Connect

    Sopori, B.L.; Cudzinovic, M.; Symko, M.

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  19. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    NASA Astrophysics Data System (ADS)

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-01

    Bunch driven plasma wakefield accelerators (PWFA), such as the "plasma afterburner," are a promising emerging method for significantly increasing the energy output of conventional particle accelerators [1]. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) [2] and Holographic (FDH) [3] diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two [4] and multi-bunch [5] drive beams.

  20. Optical Frequency Domain Visualization of Electron Beam Driven Plasma Wakefields

    SciTech Connect

    Zgadzaj, Rafal; Downer, Michael C.; Muggli, Patric; Yakimenko, Vitaly; Kusche, Karl; Fedurin, Michhail; Babzien, Marcus

    2010-11-04

    Bunch driven plasma wakefield accelerators (PWFA), such as the 'plasma afterburner', are a promising emerging method for significantly increasing the energy output of conventional particle accelerators. The study and optimization of this method would benefit from an experimental correlation of the drive bunch parameters and the accelerated particle parameters with the corresponding plasma wave structure. However, the plasma wave structure has not been observed directly so far. We will report ongoing development of a noninvasive optical Frequency Domain Interferometric (FDI) and Holographic (FDH) diagnostics of bunch driven plasma wakes. Both FDI and FDH have been previously demonstrated in the case of laser driven wakes. These techniques employ two laser pulses co-propagating with the drive particle bunch and the trailing plasma wave. One pulse propagates ahead of the drive bunch and serves as a reference, while the second is overlapped with the plasma wave and probes its structure. The multi-shot FDI and single-shot FDH diagnostics permit direct noninvasive observation of longitudinal and transverse structure of the plasma wakes. The experiment is being developed at the 70 MeV Linac in the Accelerator Test Facility at Brookhaven National Laboratory to visualize wakes generated by two and multi-bunch drive beams.

  1. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    SciTech Connect

    Kasherininov, P. G. Tomasov, A. A.

    2008-11-15

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10{sup 6} cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10{sup -2}V/cm{sup 2}, and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  2. Colloidal particles driven across periodic optical-potential-energy landscapes

    NASA Astrophysics Data System (ADS)

    Juniper, Michael P. N.; Straube, Arthur V.; Aarts, Dirk G. A. L.; Dullens, Roel P. A.

    2016-01-01

    We study the motion of colloidal particles driven by a constant force over a periodic optical potential energy landscape. First, the average particle velocity is found as a function of the driving velocity and the wavelength of the optical potential energy landscape. The relationship between average particle velocity and driving velocity is found to be well described by a theoretical model treating the landscape as sinusoidal, but only at small trap spacings. At larger trap spacings, a nonsinusoidal model for the landscape must be used. Subsequently, the critical velocity required for a particle to move across the landscape is determined as a function of the wavelength of the landscape. Finally, the velocity of a particle driven at a velocity far exceeding the critical driving velocity is examined. Both of these results are again well described by the two theoretical routes for small and large trap spacings, respectively. Brownian motion is found to have a significant effect on the critical driving velocity but a negligible effect when the driving velocity is high.

  3. Beam driven upper-hybrid-wave instability in quantized semiconductor plasmas

    SciTech Connect

    Jamil, M.; Rasheed, A.; Rozina, Ch.; Moslem, W. M.; Salimullah, M.

    2014-02-15

    The excitation of Upper-Hybrid waves (UHWs) induced by electron beam in semiconductor plasma is examined using quantum hydrodynamic model. Various quantum effects are taken into account including recoil effect, Fermi degenerate pressure, and exchange-correlation potential. The bandwidth of the UHWs spectrum shows that the system supports purely growing unstable mode. The latter has been studied for diversified parameters of nano-sized GaAs semiconductor.

  4. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor.

    PubMed

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-15

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure. PMID:25576934

  5. Access to long-term optical memories using photon echoes retrieved from semiconductor spins

    NASA Astrophysics Data System (ADS)

    Langer, L.; Poltavtsev, S. V.; Yugova, I. A.; Salewski, M.; Yakovlev, D. R.; Karczewski, G.; Wojtowicz, T.; Akimov, I. A.; Bayer, M.

    2014-11-01

    The ability to store optical information is important for both classical and quantum communication. Achieving this in a comprehensive manner (converting the optical field into material excitation, storing this excitation, and releasing it after a controllable time delay) is greatly complicated by the many, often conflicting, properties of the material. More specifically, optical resonances in semiconductor quantum structures with high oscillator strength are inevitably characterized by short excitation lifetimes (and, therefore, short optical memory). Here, we present a new experimental approach to stimulated photon echoes by transferring the information contained in the optical field into a spin system, where it is decoupled from the optical vacuum field and may persist much longer. We demonstrate this for an n-doped CdTe/(Cd,Mg)Te quantum well, the storage time of which could be increased by more than three orders of magnitude, from the picosecond range up to tens of nanoseconds.

  6. Optical properties of two-dimensional zigzag and armchair graphyne nanoribbon semiconductor

    NASA Astrophysics Data System (ADS)

    Asadpour, Mohamad; Jafari, Mahmoud; Asadpour, Milad; Jafari, Maryam

    2015-03-01

    Optical properties of zigzag and armchair graphyne nanoribbon (GNR) sheet were investigated. Effect of increasing the width of nanoribbon on optical properties and optical band gap in particular was also studied. Calculations were based on density functional theory (DFT) and the results showed that these structures were semiconductors with the optical band gap of about 1-3.5 eV; this value was higher than for the armchair than zigzag structures. With increasing the width of the ribbons, optical band gap decreased in both structures and maximum electron energy loss spectroscopy (EELS) and dielectric constant increased for the zigzag and armchair structures. Moreover, for the armchair structure, maximum optical reflectivity versus GNR width was a linear function, while it showed a teeth behavior for the zigzag structure.

  7. Fibre-optic thermometer using semiconductor-etalon sensor

    NASA Technical Reports Server (NTRS)

    Beheim, G.

    1986-01-01

    A fiber-optic thermometer is described which uses a thick-film SiC sensing etalon. The etalon's temperature-dependent phase shift is determined by analyzing its spectral reflectance, using an LED and a tunable Michelson interferometer. Temperatures from 20 to 1000 C are measured with better than 0.5 deg C resolution.

  8. Miniature semiconductor ring laser sources for integrated optical circuits

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Laybourn, Peter J. R.; Jezierski, Andrzej F.; Krauss, Thomas F.; Webb, P. W.

    1990-08-01

    Miniature semiconductor lasers with resonant ring cavities in both heterostructure and quantum well material have been developed at Glasgow. Two laser structures, rib ring laser and polyimide-embedded ring laser, have been investigated. The resonators produced are between 10 and 1 00im in diameter and because of their small size, the longitudial ,mode spacing is increased over that of conventional cleaved-cavity lasers, reducing the numbers of lasing modes in the mode spectrum. But the small structure will cause thermal problems because of the difficulty of heat dissipation. Detailed thermal measurements have been made on the surface of the laser by an infrared thermal imaging technique. The results give a fair qualitative assessment of the thermal behaviour of a ring laser compared to theoretical modelling results, and show that the temperature rise of the lasing ring is excessive at lasing threshold current for the very small ring and narrow rib structure. Increasing the ring diameter, with a shallower or wider rib structure or even a pill-box structure, will improve heat dissipation and reduce threshold current.

  9. Epitaxial 3-5 semiconductors for integrated electro-optics

    NASA Astrophysics Data System (ADS)

    Anderson, Wayne A.; Beachley, O. T., Jr.; Kwok, H. S.; Liu, P. L.; Wie, C. R.

    1988-06-01

    Research has been conducted on the synthesis and evaluation of new organometallics (OM), growth of epitaxial layers by OMCVD and laser chemical vapor deposition (LCVD), laser interaction with materials, structural and chemical evaluation of epitaxial layers, electrical evaluation of epitaxial layers and radiation effects in semiconductors and insulators. New OM precursors were developed and used in OMCVD. New OM sources are considered for lower toxicity and more efficient reaction. For the first time, InSb was grown in CdTe by OMCVD. A quadrupole mass analyzer and low temperature luminescence were installed for in situ diagnostics. Laser interaction studies reveal the importance of tunneling ionization for carrier generation in low bandgap materials. Ion emission has been measured from a metal surface due to laser irradiation. Ions were observed at low laser fluence and at a frequency corresponding to an energy less than the material work function. Rocking curve studies of MBE-grown strained GaInAs on GaAs is the most reliable technique for strains less than 0.3 percent. LO-TO splitting in ion damaged GaAs has been explained by the effective ionic charge of the ion beam-induced point defects. Deep level transient spectroscopy studies of irradiated p-InP has revealed trap levels and annealing effects of importance in extraterrestrial applications. A Yb/p-InP device has shown good linearity and improved stability as a temperature sensor from 100 to 400K.

  10. Nonlinear optics of Bloch oscillating electrons in semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Ghosh, Avik

    A quantum particle in a periodic potential can exhibit rich dynamics in a driving field. In particular, Bloch oscillation of electrons in a superlattice leads to optical properties that are nonlinear functions of the input fields. In a DC field, we analyze the coupling of Bloch oscillations in a superlattice with plasmons and longitudinal optical (LO) phonons, modelled by a pendulum linearly coupled to an oscillator. In the absence of LO phonons, the pendulum equation predicts a sharp transition from plasma oscillations to Bloch oscillations at a critical density or electric field. Resonant Bloch-phonon coupling enhances the phonon amplitude and generates sidebands, but produces no gap in the Bloch-phonon spectrum. Our predictions qualitatively agree with recent experimental results. Considerably more dramatic is the response of charges to an oscillatory incident field. In an AC field, the resonance between the external frequency and the Bloch oscillation frequency set by the field amplitude makes the optical response a nonlinear function of the field amplitude. At certain discrete values of the AC amplitude the electron is dynamically localized, whereupon the total current density decreases drastically while the power dissipated is maximized. The THz reflection coefficient vanishes at dynamic localization, and thus oscillates with varying AC field amplitude inside the superlattice. At high doping, the nonlinear transformation between the fields inside and outside the superlattice leads furthermore to multistability in the optical properties as a function of the incident field. Similar oscillations and multistability exist for third harmonic power generated by a set of superlattices fabricated into a quasi-optical array. The generated power can be optimized by bringing the harmonics into Fabry-Perot resonance with the substrate. We compare our predictions with recent experimental results for a quasi-optical array. Combining a mixture of DC and AC fields leads to

  11. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    NASA Astrophysics Data System (ADS)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  12. Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-11-01

    We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

  13. Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering.

    PubMed

    Li, Fangxin; Helmy, Amr S

    2013-11-15

    We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width ~22 KHz is experimentally demonstrated. PMID:24322069

  14. Mueller based scatterometry and optical characterization of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Muthinti, Gangadhara Raja

    Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light reflected from a sample. MM is a 4x4 transformation matrix (16 elements) describing the change in the intensities of incident polarized light expressed by means of a Stokes Vector. The symmetry properties associated with MM provide an excellent means of measuring and understanding the topography of the periodic nanostructures. Topography here refers to uniformity of the periodic order of arrayed structure. The advantage of MMS over traditional SE Scatterometry is the ability of MMS to measure samples that have anisotropic optical properties and depolarize light. The present work focuses on understanding the Mueller based Scatterometry with respect to other methodologies by a systematic approach. Several laterally complex nano-scale structures with dimensions in the order of nanometers were designed and fabricated using e-beam lithography. Also Mueller based analysis was used to extract profile information and anisotropy coefficients of complex 3D FinFET, SOI fin grating structures. Later, Spectroscopic Mueller matrix (all 16 elements) and SE data were collected in planar diffraction mode for the samples using a J.A. Woollam RC2(TM) Spectroscopic Ellipsometer. Nano

  15. Optical, thermal, and electronic semiconductor properties of thermochromic metal halides

    NASA Astrophysics Data System (ADS)

    Novinson, Thomas; Zink, Jeffrey I.; Kennedy, John; Kaska, William C.

    1990-12-01

    Silver mercury tetraiodide (Ag,HgI ) is a well known thermochromic pigment that changes color from yellow to ornge at 50 C. The compound is also a fast ion conductor above its phase transition temperature. We synthesized a number of analogues of this compound in which the silver was replaced by cadmium, lead, thallium(I), copper(I), indium(I), gold(I), lithium, cesium and rubidium to determine the range of color transitions and the correlation of electrical conductivity with optical and thermal activity. This paper also reports on continued research to assess the possibility of using these pigments in architectural coatings.

  16. Optically driven Archimedes micro-screws for micropump application.

    PubMed

    Lin, Chih-Lang; Vitrant, Guy; Bouriau, Michel; Casalegno, Roger; Baldeck, Patrice L

    2011-04-25

    Archimedes micro-screws have been fabricated by three-dimensional two-photon polymerization using a Nd:YAG Q-switched microchip laser at 532nm. Due to their small sizes they can be easily manipulated, and made to rotate using low power optical tweezers. Rotation rates up to 40 Hz are obtained with a laser power of 200 mW, i.e. 0.2 Hz/mW. A photo-driven micropump action in a microfluidic channel is demonstrated with a non-optimized flow rate of 6 pL/min. The optofluidic properties of such type of Archimedes micro-screws are quantitatively described by the conservation of momentum that occurs when the laser photons are reflected on the helical micro-screw surface. PMID:21643076

  17. Intrinsic optical bistability in a strongly driven Rydberg ensemble

    NASA Astrophysics Data System (ADS)

    de Melo, Natalia R.; Wade, Christopher G.; Šibalić, Nikola; Kondo, Jorge M.; Adams, Charles S.; Weatherill, Kevin J.

    2016-06-01

    We observe and characterize intrinsic optical bistability in a dilute Rydberg vapor. The bistability is characterized by sharp jumps between states of low and high Rydberg occupancy with jump-up and -down positions displaying hysteresis depending on the direction in which the control parameter is changed. We find that the shift in frequency of the jump point scales with the fourth power of the principal quantum number. Also, the width of the hysteresis window increases with increasing principal quantum number, before reaching a peak and then closing again. The experimental results are consistent with predictions from a simple theoretical model based on semiclassical Maxwell-Bloch equations including the effects of interaction-induced broadening and level shifts. These results provide insight into the dynamics of driven dissipative systems.

  18. Laser-driven Sisyphus cooling in an optical dipole trap

    SciTech Connect

    Ivanov, Vladyslav V.; Gupta, Subhadeep

    2011-12-15

    We propose a laser-driven Sisyphus-cooling scheme for atoms confined in a far-off resonance optical dipole trap. Utilizing the differential trap-induced ac Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser preferentially near the trap bottom. After absorption of a cooling photon, the atom loses energy by climbing the steeper potential, and then spontaneously decays preferentially away from the trap bottom. The proposed method is particularly suited to cooling alkaline-earth-metal-like atoms where two-level systems with narrow electronic transitions are present. Numerical simulations for the cases of {sup 88}Sr and {sup 174}Yb demonstrate the expected recoil and Doppler temperature limits. The method requires a relatively small number of scattered photons and can potentially lead to phase-space densities approaching quantum degeneracy in subsecond time scales.

  19. Laser-driven Sisyphus cooling in an optical dipole trap

    NASA Astrophysics Data System (ADS)

    Ivanov, Vladyslav V.; Gupta, Subhadeep

    2011-12-01

    We propose a laser-driven Sisyphus-cooling scheme for atoms confined in a far-off resonance optical dipole trap. Utilizing the differential trap-induced ac Stark shift, two electronic levels of the atom are resonantly coupled by a cooling laser preferentially near the trap bottom. After absorption of a cooling photon, the atom loses energy by climbing the steeper potential, and then spontaneously decays preferentially away from the trap bottom. The proposed method is particularly suited to cooling alkaline-earth-metal-like atoms where two-level systems with narrow electronic transitions are present. Numerical simulations for the cases of 88Sr and 174Yb demonstrate the expected recoil and Doppler temperature limits. The method requires a relatively small number of scattered photons and can potentially lead to phase-space densities approaching quantum degeneracy in subsecond time scales.

  20. An Adjustable Gain-Clamped Semiconductor Optical Amplifier (AGC-SOA)

    NASA Astrophysics Data System (ADS)

    Michie, C.; Kelly, A. E.; Armstrong, I.; Andonovic, I.; Tombling, C.

    2007-06-01

    The operation of a semiconductor optical amplifier (SOA)-ring laser-based subsystem, with the capability to provide adjustable gain-clamped operation, will be described, and preliminary characterization results will be presented. The device uses two SOAs in a ring-cavity topology: one to amplify the signal and the other to control the gain. This type of subsystem finds applications in packet-based dynamic systems where it may be used for power equalization and linear amplification.

  1. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry. PMID:20195322

  2. Microwave photonic phase shifter based on birefringence effects in a semiconductor optical amplifier.

    PubMed

    Chen, Han; Sun, Mingming; Ding, Yi; Sun, Xiaohan

    2013-09-01

    A continuously tunable microwave photonic (MWP) phase shifter based on birefringence effects in a semiconductor optical amplifier (SOA) is presented and the theoretical fundamentals of the design are explained. This proposed device provides a high efficiency phase-shift tuning range beyond 2π rad by controlling the SOA launch power. A prototype of the MWP phase shifter with a frequency of 10 GHz and 2π rad tuning range is experimentally demonstrated. PMID:23988932

  3. Methods and devices for optimizing the operation of a semiconductor optical modulator

    DOEpatents

    Zortman, William A.

    2015-07-14

    A semiconductor-based optical modulator includes a control loop to control and optimize the modulator's operation for relatively high data rates (above 1 GHz) and/or relatively high voltage levels. Both the amplitude of the modulator's driving voltage and the bias of the driving voltage may be adjusted using the control loop. Such adjustments help to optimize the operation of the modulator by reducing the number of errors present in a modulated data stream.

  4. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  5. Spontaneous locking of optical vortices in coupled semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Yadin, Yoav; Scheuer, Jacob; Gross, Yoav; Orenstein, Meir

    2014-09-01

    Non-conventional emission of light, comprising engaged rotating light cogs, is measured and analyzed. The source of this unique emission is an array of coupled surface emitting lasers, each emitting an optical vortex. The complex rotating light structures are formed spontaneously by specific combinations of the individual vortices, each carrying two types of "charge": orbital angular momentum (±1 topological charge) and a relative engagement phase (0 or π). These charges determine the specific form in which the individual rotating fields are engaged to generate the emanated light gear. The experimentally observed formations and dynamic evolution of the light gears stem from the complex nonlinear dynamics of the coupled rotating-field emitters, a mechanism which we have successfully modeled and utilized for interpreting the obtained results. The engaged light gears can be used in controlled generation and transmission of multiple degrees of freedom photons, for high-bit-rate classic and quantum telecommunications, particle manipulation, and super-resolution imaging.

  6. Optically Encoded Second-Harmonic Generation in Semiconductor Microcrystallite-Doped Glass: Physics and Applications.

    NASA Astrophysics Data System (ADS)

    MacDonald, Robert Lawrence

    Semiconductor microcrystallite-doped glasses (SDG) are presented as a new class of materials for optically encoded second harmonic generation. The encoding and readout behavior of SDG is compared with that observed in homogeneous glass. An encoding model for SDG, based on directional trapping of electrons at the semiconductor-glass interface, is developed and shown to be consistent with the observed behavior and with known properties of SDG. Measured optical erasure rates of the encoded SDG provide evidence for the microscopic details of the encoding, and above bandgap erasure is used to observe charge screening in the semiconductor nanocrystals. Quantum confinement effects are observed in the intensity dependence of the encoding efficiency. Ion -exchanged ridge and channel waveguides in SDG are fabricated and encoded with as little as 2 mW average power. The measured readout wavelength dependence in bulk homogeneous glass is consistent with encoding of a chi ^{(2)} grating having a period slightly shifted from that required for quasi-phasematched second harmonic generation at the encoded wavelength. Multiple wavelength encoding is demonstrated and proposed as a new technique for optical storage and readout of information.

  7. Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

    NASA Astrophysics Data System (ADS)

    Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.

    2016-08-01

    The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.

  8. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  9. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  10. Comparison of the fiber optic dosimeter and semiconductor dosimeter for use in diagnostic radiology

    NASA Astrophysics Data System (ADS)

    Yoo, W. J.; Shin, S. H.; Sim, H. I.; Hong, S.; Kim, S. G.; Jang, J. S.; Kim, J. S.; Jeon, H. S.; Kwon, G. W.; Jang, K. W.; Cho, S.; Lee, B.

    2014-05-01

    A fiber-optic dosimeter (FOD) was fabricated using a plstic scintillating fiber, a plastic optical fiber, and a multi-pixel photon counter to measure entrance surface dose (ESD) in diagnostic radiology. Under changing tube current and irradition time of the digital radiography (DR) system, we measured the scintillating light and the ESD simultaneously. As experiemtnal results, the total counts of the FOD were changed in a manner similar to the ESDs of the semiconductor dosimeter (SCD). In conclusion, we demonstrated that the proposed FOD minimally affected the diagnostic information of DR image while the SCD caused serious image artifacts.

  11. Semiconductor optical amplifiers for the 1000-1100-nm spectral range

    SciTech Connect

    Lobintsov, A A; Shramenko, M V; Yakubovich, S D

    2008-07-31

    Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

  12. Tunable directly modulated fiber ring laser using a reflective semiconductor optical amplifier for WDM access networks.

    PubMed

    Lin, Zih-Rong; Liu, Cheng-Kuang; Jhang, Yu-Jhu; Keiser, Gerd

    2010-08-16

    We have proposed a stable, wideband, and tunable directly modulated fiber ring laser (TDMFRL) by using a reflective semiconductor optical amplifier (RSOA) and an optical tunable filter (OTF). For use in a bidirectional access network, the TDMFRL not only generates downstream data traffic but also serves as the wavelength-selecting injection light source for the Fabry-Pérot laser diode (FP-LD) located at the subscriber site. We experimentally demonstrated a bidirectional transmission at 1.25-Gb/s direct modulation over a 25-km single-mode fiber (SMF), thereby showing good performance in a wavelength division multiplexing (WDM) access network. PMID:20721147

  13. Interband optical spectra of magnetoexcitons in semiconductor nanorings: Electron-hole spatial correlation

    NASA Astrophysics Data System (ADS)

    Citrin, D. S.; Maslov, A. V.

    2005-08-01

    An analytic model [R. A. Römer and M. E. Raikh, Phys. Rev. B 62, 7045 (2000); K. Moulopoulos and M. Constantinou, Phys. Rev. B 70, 235327 (2004)] for magnetoexcitons in nanoscale semiconductor rings is extended to calculate directly the linear optical properties. The spectroscopic properties exhibit pronounced Φ0=hc/e excitonic Aharonov-Bohm oscillations in the threading magnetic flux Φ when the ring radius R is less than the effective exciton Bohr radius a0 . The electron-hole spatial correlation induced by an optical field as a function of nanoring radius and threading magnetic flux is studied.

  14. Optical characterization of C{sub 60} organic semiconductor and bilayers

    SciTech Connect

    Rainho, J.P.; Santos, L.; Kharlamov, A.A.

    1998-07-01

    Preparation and characterization either by optical absorption, photoluminescence and micro-Raman spectroscopy of individual components as well as bilayers consisting of organic dye semiconductor Zinc Phthalocyanine (ZnPc) and fullerene, C{sub 60}, thin films are reported. The layers and structures were deposited in vacuum and some fullerene films were also prepared by casting the C{sub 60} solution in benzene. The optical absorption and photoluminescence dependencies on film thickness in bilayers C{sub 60}/ZnPc were observed and may be discussed in a context of interface induced symmetry reduction of C{sub 60} molecules.

  15. Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho

    2013-10-01

    We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

  16. Optically driven resonance of nanoscale flexural oscillators in liquid.

    PubMed

    Verbridge, Scott S; Bellan, Leon M; Parpia, Jeevak M; Craighead, H G

    2006-09-01

    We demonstrate the operation of radio frequency nanoscale flexural resonators in air and liquid. Doubly clamped string, as well as singly clamped cantilever resonators, with nanoscale cross-sectional dimensions and resonant frequencies as high as 145 MHz are driven in air as well as liquid with an amplitude modulated laser. We show that this laser drive technique can impart sufficient energy to a nanoscale resonator to overcome the strong viscous damping present in these media, resulting in a mechanical resonance that can be measured by optical interference techniques. Resonance in air, isopropyl alcohol, acetone, water, and phosphate-buffered saline is demonstrated for devices having cross-sectional dimensions close to 100 nm. For operation in air, quality factors as high as 400 at 145 MHz are demonstrated. In liquid, quality factors ranging from 3 to 10 and frequencies ranging from 20 to 100 MHz are observed. These devices, and an all-optical actuation and detection system, may provide insight into the physics of the interaction of nanoscale mechanical structures with their environments, greatly extending the viscosity range over which such small flexural resonant devices can be operated. PMID:16968035

  17. Near field scanning optical microscopy of polycrystalline semiconductors

    NASA Astrophysics Data System (ADS)

    Herndon, Mary Kay

    1999-09-01

    Photovoltaic devices are commonly used for space applications and remote terrestrial power requirements. Polycrystalline solar cell devices often have much lower efficiencies than their crystalline counterparts, but because they can be fabricated much more cheaply, they can still be cost-effective when compared to single crystal devices. The long term goal of this work is to provide information that will lead to higher quality devices with improved cost efficiency. In order to do this, a better understanding of the mechanisms that take place in these materials is needed. The goal of this thesis was to improve our understanding of these devices by adapting a novel characterization technique, Near Field Scanning Optical Microscopy (NSOM), to the study of polycrystalline films. Visible light NSOM is a relatively new technique that allows for optical characterization of materials with resolution beyond the far-field diffraction limit. By using NSOM to study the physical and electrical properties of polycrystalline solar cells, individual grains can be studied and more insight can be gained as to how various properties of the thin films affect the device efficiency. For this research, an NSOM was designed and built to be versatile enough to handle the sorts of samples and measurements required for studying a variety of photovoltaic devices. As a first step, the NSOM was used to characterize single crystal GaAs solar cell devices. Measurements of topography and NSOM-induced photocurrent were obtained simultaneously on cross sections of the material, allowing the p-n junction to be probed. Because the NSOM data could be compared to an expected result, this allowed verification of the new microscope's imaging capabilities and ensured accurate data interpretation. Effects of surface recombination were detected on the cleaved edges. The NSOM was used to characterize surface quality and study the effects of surface passivation treatments. Of the polycrystalline materials

  18. Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

    SciTech Connect

    Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

    2007-11-01

    We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity.

  19. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  20. Transition metal doped semiconductor quantum dots: Optical and magnetic properties

    NASA Astrophysics Data System (ADS)

    Dahnovsky, Yuri; Proshchenko, Vitaly; Pimachev, Artem

    We study optical and magnetic properties of CdSe and Cd-Mn-Se quantum dots (QD). We find that there are two luminescence lines, one is fast and another is slow (~1ms). With the increase of a QD diameter the slow luminescence disappears at some critical QD size, thus only one line (fast) remains. Using the SAC SI computational method we find that D = 3.2 nm and D = 2.7 nm if the Mn impurity is located inside a QD or on a QD surface, respectively. For two or four Mn atoms in the quantum dot, now absorption takes place because the transition is spin-allowed. The DFT calculations of the magnetic state reveal that it is an antiferromagnet. We also study other quantum dots such as Cd-Mn-Se, Zn-Mn-S, and Zn-Mn-Se, doped and undoped. We find the slow luminescence energies for low concentrations of Mn impurities for each QD type. The calculations indicate that two luminescence lines, fast and slow, should always take place. However for Pb-Mn-S quantum dots there are now Mn levels inside a HOMO-LUMO gap, i.e., the Mn-levels are located in a PbS conduction band. The presence of Mn dopants increases the band gap and also removes the exciton peak. This effect is different to the other quantum dots.

  1. Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

    PubMed

    Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

    2010-10-26

    It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system. PMID:20860401

  2. Luminescent CdTe and CdSe semiconductor nanocrystals: preparation, optical properties and applications.

    PubMed

    Wang, Ying

    2008-03-01

    The novel optical and electrical properties of luminescent semiconductor nanocrystals are appealing for ultrasensitive multiplexing and multicolor applications in a variety of fields, such as biotechnology, nanoscale electronics, and opto-electronics. Luminescent CdSe and CdTe nanocrystals are archetypes for this dynamic research area and have gained interest from diverse research communities. In this review, we first describe the advances in preparation of size- and shape-controlled CdSe and CdTe semiconductor nanocrystals with the organometallic approach. This article gives particular focus to water soluble nanocrystals due to the increasing interest of using semiconductor nanocrystals for biological applications. Post-synthetic methods to obtain water solubility, the direct synthesis routes in aqueous medium, and the strategies to improve the photoluminescence efficiency in both organic and aqueous phase are discussed. The shape evolution in aqueous medium via self-organization of preformed nanoparticles is a versatile and powerful method for production of nanocrystals with different geometries, and some recent advances in this field are presented with a qualitative discussion on the mechanism. Some examples of CdSe and CdTe nanocrystals that have been applied successfully to problems in biosensing and bioimaging are introduced, which may profoundly impact biological and biomedical research. Finally we present the research on the use of luminescent semiconductor nanocrystals for construction of light emitting diodes, solar cells, and chemical sensors, which demonstrate that they are promising building blocks for next generation electronics. PMID:18468108

  3. Temperature-driven transition from a semiconductor to a topological insulator

    NASA Astrophysics Data System (ADS)

    Wiedmann, Steffen; Jost, Andreas; Thienel, Cornelius; Brüne, Christoph; Leubner, Philipp; Buhmann, Hartmut; Molenkamp, Laurens W.; Maan, J. C.; Zeitler, Uli

    2015-05-01

    We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.

  4. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  5. Reactive molten core fabrication of glass-clad Se(0.8)Te(0.2) semiconductor core optical fibers.

    PubMed

    Tang, Guowu; Qian, Qi; Wen, Xin; Chen, Xiaodong; Liu, Wangwang; Sun, Min; Yang, Zhongmin

    2015-09-01

    Phosphate glass-clad optical fibers comprising amorphous Se(0.8)Te(0.2) semiconductor core were fabricated by a reactive molten core approach. The Se(0.8)Te(0.2) crystals were precipitated in core region by a postdrawing annealing process, which were confirmed by X-ray diffraction, micro-Raman spectra, electron probe X-ray micro-analyzer, and transmission electron microscope measurement results. A two-cm-long crystalline Se(0.8)Te(0.2) semiconductor core optical fiber, electrically contacted to external circuitry through the fiber end facets, exhibits a two-orders-of-magnitude change in conductivity between dark and illuminated states. The great discrepancy in light and dark conductivity suggests that such crystalline Se(0.8)Te(0.2) semiconductor core optical fibers have promising applications in optical switch and photoconductivity of optical fiber array. PMID:26368460

  6. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors.

    PubMed

    Nashy, El-Shahat H A; Al-Ashkar, Emad; Moez, A Abdel

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows. PMID:22070992

  7. Integration of photonic nanojets and semiconductor nanoparticles for enhanced all-optical switching

    PubMed Central

    Born, Brandon; Krupa, Jeffrey D. A.; Geoffroy-Gagnon, Simon; Holzman, Jonathan F.

    2015-01-01

    All-optical switching is the foundation of emerging all-optical (terabit-per-second) networks and processors. All-optical switching has attracted considerable attention, but it must ultimately support operation with femtojoule switching energies and femtosecond switching times to be effective. Here we introduce an all-optical switch architecture in the form of a dielectric sphere that focuses a high-intensity photonic nanojet into a peripheral coating of semiconductor nanoparticles. Milli-scale spheres coated with Si and SiC nanoparticles yield switching energies of 200 and 100 fJ with switching times of 10 ps and 350 fs, respectively. Micro-scale spheres coated with Si and SiC nanoparticles yield switching energies of 1 pJ and 20 fJ with switching times of 2 ps and 270 fs, respectively. We show that femtojoule switching energies are enabled by localized photoinjection from the photonic nanojets and that femtosecond switching times are enabled by localized recombination within the semiconductor nanoparticles. PMID:26314911

  8. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  9. Quasiparticle and optical spectroscopy of the organic semiconductors pentacene and PTCDA from first principles

    NASA Astrophysics Data System (ADS)

    Sharifzadeh, Sahar; Biller, Ariel; Kronik, Leeor; Neaton, Jeffrey B.

    2012-03-01

    The broad use of organic semiconductors for optoelectronic applications relies on quantitative understanding and control of their spectroscopic properties. Of paramount importance are the transport gap—the difference between ionization potential and electron affinity—and the exciton binding energy—inferred from the difference between the transport and optical absorption gaps. Transport gaps are commonly established via photoemission and inverse photoemission spectroscopy (PES/IPES). However, PES and IPES are surface-sensitive, average over a dynamic lattice, and are subject to extrinsic effects, leading to significant uncertainty in gaps. Here, we use density functional theory and many-body perturbation theory to calculate the spectroscopic properties of two prototypical organic semiconductors, pentacene, and 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA), quantitatively comparing with measured PES, IPES, and optical absorption spectra. For bulk pentacene and PTCDA, the computed transport gaps are 2.4 and 3.0 eV, and optical gaps are 1.7 and 2.1 eV, respectively. Computed bulk quasiparticle spectra are in excellent agreement with surface-sensitive photoemission measurements over several eV only if the measured gap is reduced by 0.6 eV for pentacene and 0.6-0.9 eV for PTCDA. We attribute this redshift to several physical effects, including incomplete charge screening at the surface, static and dynamical disorder, and experimental resolution. Optical gaps are in excellent agreement with experiment with solid-state exciton binding energies of ˜0.5 eV for both systems; for pentacene the exciton is delocalized over several molecules and exhibits significant charge transfer character. Our parameter-free calculations provide new interpretation of spectroscopic properties of organic semiconductors critical to optoelectronics.

  10. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    NASA Astrophysics Data System (ADS)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  11. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

    DOE PAGESBeta

    Donev, E. U.; Suh, J. Y.; Lopez, R.; Feldman, L. C.; Haglund, R. F.

    2008-01-01

    We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

  12. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  13. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Chang-Hwan Kim

    2003-12-12

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  14. On the feasibility of full pattern-operated all-optical XOR gate with single semiconductor optical amplifier-based ultrafast nonlinear interferometer

    NASA Astrophysics Data System (ADS)

    Siarkos, T.; Zoiros, K. E.; Nastou, D.

    2009-07-01

    The possibility of implementing an ultrafast all-optical XOR gate using a single semiconductor optical amplifier (SOA)-based ultrafast nonlinear interferometer (UNI) is theoretically investigated and demonstrated. For this purpose a comprehensive model that characterizes the performance of a SOA when it is successively driven by two strong pseudorandom binary sequences is applied to simulate the specific module under dual rail switching mode of operation. In this manner an extensive set of curves is obtained allowing to analyze and evaluate the impact of the input data, SOA and interferometer critical parameters on the fully loaded Q-factor. Their thorough study and interpretation reveals that the satisfaction of their requirements in order to render acceptable this metric is feasible from a technological perspective and thus if their selection is made according to the extracted guidelines then pattern-free and error-free modulo-2 arithmetic can be straightforwardly realized at 20 Gb/s. This prediction can be of practical interest in simplifying and assisting the design of more sophisticated interconnections of enhanced combinatorial and sequential functionality in which the XOR gate is the core logical unit.

  15. Phenomenological model analysis for semiconductor optical amplifiers and application to time-domain digital polarization encoding.

    PubMed

    Li, Zhengyong; Wu, Chongqing

    2008-09-15

    We propose and demonstrate that semiconductor optical amplifiers (SOAs) for each wavelength of the input can be described by a lumped-elements sequence of a partly linear polarizer and a retarder followed by a polarization-independent amplifier, and further obtain two necessary conditions for the valuable orthogonal polarization rotation (OPR), which will be instructive for SOA-based all-optical signal processing. Subsequently we implement photoinduced OPR by controlling an approximately 2.5 mW pump laser and find the optimal pump wavelength should be an approximately 0.4 nm interval around the central wavelength of the probe laser. Therefore we propose a time-domain digital polarization encoding scheme based on photoinduced OPR with cross-gain modulation in a SOA and perform it well in a 15 km single-mode-fiber system at 2.5 Gbits/s, which is applicable to optical-power-equalized fiber communication. PMID:18794921

  16. High-stability optical components for semiconductor laser intersatellite link experiment (SILEX) project

    NASA Astrophysics Data System (ADS)

    Lepretre, Francois

    1994-09-01

    Within the framework of a MATRA MARCONI SPACE FRANC contract for the European Space Agency, MATRA DEFENSE - DOD/UAO have developed, produced and tested 9 laser diode collimators, 52 optical components (anamorphoser, mirrors, dichroic splitters, redundancy module) and 9 interferential filters. All these space equipments must be integrated into the optical head of the SILEX (Semi-conductor Laser Intersatellite Link Experiment) bench. The SILEX experiment consists in transferring data from a low altitude satellite (SPOT 4) to a satellite in geostationary orbit (ARTEMIS) via beam generated by a laser diode (60 mW Cw). Very low emitted flux and long distance between the two satellites gives rise to the following technical difficulties: high angular (1 (mu) rad) and transverse stability requirements, requirement for high transmission and high rejection narrow band filters, in order to differentiate the transmit and receive channels, necessity of a very good optical wavefront, wavelength range 815-825 nm, 843-853 nm.

  17. Experimental demonstration of slow and superluminal light in semiconductor optical amplifiers.

    PubMed

    Pesala, Bala; Chen, Zhangyuan; Uskov, Alexander V; Chang-Hasnain, Connie

    2006-12-25

    Tunable delays in semiconductor optical amplifiers are achieved via four wave mixing between a strong pump beam and a modulated probe beam. The delay of the probe beam can be controlled both electrically, by changing the SOA bias, and optically, by varying the pump power or the pump-probe detuning. For sinusoidal modulated signal at 0.5 GHz, a tunable delay of 1.6 ns is achieved. This corresponds to a RF phase change of 1.6 pi. For 1.3 ns optical pulses propagating through the SOA a delay of 0.59 ns is achieved corresponding to a delay-bandwidth product exceeding 0.45. For both the cases, slow light and superluminal light are observed as the pump-probe detuning is varied. PMID:19532190

  18. Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

    NASA Astrophysics Data System (ADS)

    Kitazawa, Takenori; Yamao, Takeshi; Hotta, Shu

    2016-02-01

    We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These are detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.

  19. High efficiency 160 Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Han, Huining; Zhang, Fangdi; Yang, Wei; Cai, Libo; Zhang, Min; Ye, Peida

    2007-11-01

    Proposed in this paper is a high efficient 160Gb/s all-optical wavelength converter based on terahertz optical asymmetric demultiplexer with quantum dot Semiconductor optical amplifier (QDSOA -TOAD). The performance of the wavelength converter under various operating conditions, such as different injected current densities, input pulse widths and input control pulse energies, is analyzed in terms of contrast ratio (CR) through numerical simulations. With the properly chosen parameters, a wavelength-converted signal with CR over 19.48 can be obtained.

  20. High speed semiconductor optical amplifiers and their performance in pseudo-random bit-stream generation

    NASA Astrophysics Data System (ADS)

    Dutta, N. K.; Ma, S.; Chen, Z.

    2009-06-01

    Semiconductor optical amplifiers are important for wide range of applications including optical networks, optical tomography and optical logic systems. For many of these applications particularly for optical networks and optical logic high speed performance of the SOA is important. The speed of operation of SOA is limited by the gain and phase recovery times in the SOA. We have demonstrated higher speed operation (i) for SOAs with a carrier reservoir layer, (ii) for SOAs with a multi-quantum well modulation doped active region, and, (iii) for SOAs with a quantum dot (QD) active region. The multi-quantum well SOA has been integrated with InGaAsP/InP based waveguides to build Mach- Zehnder interferometers (MZI). XOR optical logic has been demonstrated at 80 Gb/s using these SOA-MZI structures. XOR operation has been analyzed by solving the rate equation of the SOA, for SOAs with both regular and QD active region. Mach-Zehnder interferometers fabricated using SOA with quantum dot active region (QD-SOA) can be used for XOR operation at 250 Gb/s. Pseudo random bit stream (PRBS) generation using both regular and QD-SOA have been studied and their performance modeled. The model shows QD-SOA based devices can be used to produce PRBS generators that operate near 250 Gb/s.

  1. Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

    NASA Astrophysics Data System (ADS)

    Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

    2015-03-01

    Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

  2. All-optical frequency upconversion of a quasi optical single sideband signal utilizing a nonlinear semiconductor optical amplifier for radio-over-fiber applications.

    PubMed

    Park, Minho; Song, Jong-In

    2011-11-21

    An all-optical frequency upconversion technique using a quasi optical single sideband (q-OSSB) signal in a nonlinear semiconductor optical amplifier (NSOA) for radio-over-fiber applications is proposed and experimentally demonstrated. An optical radio frequency signal (f(RF) = 37.5 GHz) in the form of a q-OSSB signal is generated by mixing an optical intermediate frequency (IF) signal (f(IF) = 2.5 GHz) with an optical local oscillator signal (f(LO) = 35 GHz) utilizing coherent population oscillation and cross gain modulation effects in an NSOA. The phase noise, conversion efficiency, spurious free dynamic range (SFDR), and transmission characteristics of the q-OSSB signal are investigated. PMID:22109476

  3. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  4. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    DOE PAGESBeta

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; et al

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving wemore » achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.« less

  5. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    SciTech Connect

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-02-16

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. The qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. But, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X–Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Moreover, both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  6. Electrical current driven by a coherent spin wave in a bulk ferromagnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Fraerman, A. A.; Muhamatchin, K. R.; Tokman, I. D.

    2011-07-01

    We theoretically investigate the effect of electrical current generation by a coherent spin wave propagated in a bulk ferromagnetic semiconductor. This is one of the effects in conductive magnetic materials that are based on spin-transfer torque concept first proposed by J. C. Slonszewski [J. Magn. Magn. Mater.0304-885310.1016/0304-8853(96)00062-5 159, L1 (1996)] and L. Berger [Phys. Rev. BPLRBAQ1098-012110.1103/PhysRevB.54.9353 54, 9353 (1996)]. Due to the relatively simple description of interaction between conduction electrons and a coherent spin wave (in the framework of s-d exchange), the spin-transfer torque effect is considered here ab initio. A systematic analysis of current generation effect is done by quantum kinetics methods; relaxation processes are considered within the τ approximation. We derive an analytical expression for the stationary current density and make estimations for a ferromagnetic semiconductor of the CdCr2Se4 type.

  7. Dye-sensitised semiconductors modified with molecular catalysts for light-driven H2 production.

    PubMed

    Willkomm, Janina; Orchard, Katherine L; Reynal, Anna; Pastor, Ernest; Durrant, James R; Reisner, Erwin

    2016-01-01

    The development of synthetic systems for the conversion of solar energy into chemical fuels is a research goal that continues to attract growing interest owing to its potential to provide renewable and storable energy in the form of a 'solar fuel'. Dye-sensitised photocatalysis (DSP) with molecular catalysts is a relatively new approach to convert sunlight into a fuel such as H2 and is based on the self-assembly of a molecular dye and electrocatalyst on a semiconductor nanoparticle. DSP systems combine advantages of both homogenous and heterogeneous photocatalysis, with the molecular components providing an excellent platform for tuning activity and understanding performance at defined catalytic sites, whereas the semiconductor bridge ensures favourable multi-electron transfer kinetics between the dye and the fuel-forming electrocatalyst. In this tutorial review, strategies and challenges for the assembly of functional molecular DSP systems and experimental techniques for their evaluation are explained. Current understanding of the factors governing electron transfer across inorganic-molecular interfaces is described and future directions and challenges for this field are outlined. PMID:26584204

  8. Microwave-driven coherent operation of a semiconductor quantum dot charge qubit

    NASA Astrophysics Data System (ADS)

    Kim, Dohun; Ward, D. R.; Simmons, C. B.; Gamble, John King; Blume-Kohout, Robin; Nielsen, Erik; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    2015-03-01

    An intuitive realization of a qubit is an electron charge at two well-defined positions of a double quantum dot. This qubit is simple and has the potential for high-speed operation because of its strong coupling to electric fields. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at all but one special operating point called the ‘sweet spot’. In previous studies d.c. voltage pulses have been used to manipulate semiconductor charge qubits but did not achieve high-fidelity control, because d.c. gating requires excursions away from the sweet spot. Here, by using resonant a.c. microwave driving we achieve fast (greater than gigahertz) and universal single qubit rotations of a semiconductor charge qubit. The Z-axis rotations of the qubit are well protected at the sweet spot, and we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize the qubit operation using two tomographic approaches: standard process tomography and gate set tomography. Both methods consistently yield process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations.

  9. New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

    2002-05-01

    The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

  10. Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals.

    PubMed

    Ramakrishnan, Gopakumar; Ramanandan, Gopika K P; Adam, Aurèle J L; Xu, Man; Kumar, Nishant; Hendrikx, Ruud W A; Planken, Paul C M

    2013-07-15

    We report on the surprisingly strong, broadband emission of coherent terahertz pulses from ultrathin layers of semiconductors such as amorphous silicon, germanium and polycrystalline cuprous oxide deposited on gold, upon illumination with femtosecond laser pulses. The strength of the emission is surprising because the materials are considered to be bad (amorphous silicon and polycrystalline cuprous oxide) or fair (amorphous germanium) terahertz emitters at best. We show that the strength of the emission is partly explained by cavity-enhanced optical absorption. This forces most of the light to be absorbed in the depletion region of the semiconductor/metal interface where terahertz generation occurs. For an excitation wavelength of 800 nm, the strongest terahertz emission is found for a 25 nm thick layer of amorphous germanium, a 40 nm thick layer of amorphous silicon and a 420 nm thick layer of cuprous oxide, all on gold. The emission from cuprous oxide is similar in strength to that obtained with optical rectification from a 300 μm thick gallium phosphide crystal. As an application of our findings we demonstrate how such thin films can be used to turn standard optical components, such as paraboloidal mirrors, into self-focusing terahertz emitters. PMID:23938530

  11. Organic semiconductor lasers as integrated light sources for optical sensor systems

    NASA Astrophysics Data System (ADS)

    Punke, Martin; Woggon, Thomas; Stroisch, Marc; Ebenhoch, Bernd; Geyer, Ulf; Karnutsch, Christian; Gerken, Martina; Lemmer, Uli; Bruendel, Mathias; Wang, Jing; Weimann, Thomas

    2007-09-01

    We demonstrate the feasibility of organic semiconductor lasers as light sources for lab-on-a-chip systems. These lasers are based on a 1D- or 2D-photonic crystal resonator structure providing optical feedback in the active laser material that is deposited on top, e.g. aluminum tris(8-hydroxyquinoline) (Alq 3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM). We investigated different fabrication methods for the resonator structures, like thermal nanoimprint, UV nanoimprint, and laser interference lithography. Different substrate materials commonly used in lab-on-a-chip systems, e.g. PMMA, Topas, and Ormocer were deployed. By changing the distributed feedback grating periodicity, we demonstrate a tuning range for a single material system of more than 120 nm. The investigated organic semiconductor lasers are optically pumped. External optical pumping provides a feasible way for one-time-use chips. Our recent success of pumping organic lasers with a low-cost laser diode also renders hand-held systems possible. As a further step towards the integration of organic lasers in sensor systems, we demonstrate the coupling of an organic laser into polymeric waveguides which can be combined with microfluidic channels. The integrated organic lasers and the waveguides are both fabricated on the same polished PMMA substrate using thermal nanoimprint lithography and deep-UV modification, respectively. We could demonstrate the guiding of the laser light in single-mode waveguides.

  12. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset. PMID:26367899

  13. A silicon-nanowire memory driven by optical gradient force induced bistability

    NASA Astrophysics Data System (ADS)

    Dong, B.; Cai, H.; Chin, L. K.; Huang, J. G.; Yang, Z. C.; Gu, Y. D.; Ng, G. I.; Ser, W.; Kwong, D. L.; Liu, A. Q.

    2015-12-01

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states ("0" and "1") and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  14. A silicon-nanowire memory driven by optical gradient force induced bistability

    SciTech Connect

    Dong, B.; Cai, H. Gu, Y. D.; Kwong, D. L.; Chin, L. K.; Ng, G. I.; Ser, W.; Huang, J. G.; Yang, Z. C.; Liu, A. Q.

    2015-12-28

    In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.

  15. Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

    NASA Astrophysics Data System (ADS)

    Hegazy, Maroof A.; Abd El-Hameed, Afaf M.

    2014-06-01

    Semiconductor nanocrystals (NC’s) are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size - tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU), which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri-octyl phosphine/tri-octyl phosphine oxide). Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

  16. Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

    NASA Astrophysics Data System (ADS)

    Krupa, N. N.; Korostil', A. M.; Skirta, Yu. B.

    2005-08-01

    We experimentally study the influence of the laser-induced drift (LID) of dopant electrons and atoms on the optical properties of semiconductors. It is shown that the LID of electrons results in a dramatic change in the refractive index in the region of laser-radiation output from semiconductor crystals, impairement of the total internal reflection in semiconductors, and the occurrence of astigmatism during self-defocusing of the laser radiation in anisotropic semiconductors. This effect influences the breaking of semiconductors by nanosecond and picosecond laser pulses. The LID of dopant atoms, caused by the electrostatic interaction between the ions of these atoms and the space charge of drifting electrons, changes differently the luminescence spectra on the input and output surfaces of crystals and also results in the appearance of a dark spot on the output surface of some ZnSe crystals after irradiation by a continuous-wave CO2 laser.

  17. Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

    SciTech Connect

    Herzog, Bastian Owschimikow, Nina; Kaptan, Yücel; Kolarczik, Mirco; Switaiski, Thomas; Woggon, Ulrike; Schulze, Jan-Hindrik; Rosales, Ricardo; Strittmatter, André; Bimberg, Dieter; Pohl, Udo W.

    2015-11-16

    Submonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.

  18. All-optical depletion of dark excitons from a semiconductor quantum dot

    SciTech Connect

    Schmidgall, E. R.; Schwartz, I.; Cogan, D.; Gershoni, D.; Gantz, L.; Heindel, T.; Reitzenstein, S.

    2015-05-11

    Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

  19. Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells.

    PubMed

    Sanada, H; Kondo, Y; Matsuzaka, S; Morita, K; Hu, C Y; Ohno, Y; Ohno, H

    2006-02-17

    We demonstrate local manipulation and detection of nuclear spin coherence in semiconductor quantum wells by an optical pump-probe technique combined with pulse rf NMR. The Larmor precession of photoexcited electron spins is monitored by time-resolved Kerr rotation (TRKR) as a measure of nuclear magnetic field. Under the irradiation of resonant pulsed rf magnetic fields, Rabi oscillations of nuclear spins are traced by TRKR signals. The intrinsic coherence time evaluated by a spin-echo technique reveals the dependence on the orientation of the magnetic field with respect to the crystalline axis as expected by the nearest neighbor dipole-dipole interaction. PMID:16606048

  20. Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

    PubMed

    Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

    2012-05-01

    We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed. PMID:22565677

  1. 1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

    PubMed

    Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2009-05-25

    We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures. PMID:19466154

  2. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  3. Power and length requirements for all-optical switching in semiconductor-doped glass waveguides

    NASA Astrophysics Data System (ADS)

    Mayweather, Derek T.; Digonnet, Michel J. F.; Pantell, Richard H.; Shaw, H. J.

    1994-10-01

    We present a theoretical model that computes the nonlinear index (n2) of semiconductor- doped glasses (SDG), based on the material's properties, and predicts the power and length requirements, as well as the optimum operating wavelengths, for an all-optical SDG waveguide switch. The main conclusions are that (1) n2 depends strongly on pump intensity, which partly explains the large disparity in reported values of n2, (2) the pump and signal wavelengths should be in specific and different ranges to minimize switching power and signal loss, (3) for CdSSe- and CdTe-doped glasses, n2 is relatively small, and the switching power requirement for these two SDGs is consequently quite high (2 - 16 W). We provide evidence that this weak nonlinearity, compared to that of similar semiconductors in bulk, is due to the strong nonradiative recombination of carriers arising from the small size of the semiconductor microcrystallites. Projections indicate that the switching power would be reduced by up to three orders of magnitude by increasing the microcrystallite size, thus producing a slower (ns) but more power-efficient switch.

  4. The influence of series resistance on the longitudinal spatial hole burning in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Huang, Dexiu; Huang, Lirong

    2004-05-01

    The longitudinal spatial hole burning (LSHB) in semiconductor optical amplifiers (SOA) is investigated using an improved wideband numerical model. The main new feature of the model is that it takes into account the current self-distribution effect, which induced by the axial variations of the separation between quise-Fermi levels in active region. The current self-distribution effect leads to the nonuniform current injection, and it tends to smoothen the carrier density distribution over the active region and reduces the strength of LSHB. It is found that the internal series resistance of SOA, which comes from mental-semiconductor Ohmic contacts, heterointerface and semiconductor bulk resist, significantly influences the strength of current self-distribution effect. The assumption of current injected uniformly gives rise to an overestimation of the strength of LSHB in SOA. The simulation results also show that the series resistance influences the gain and noise figure of SOA greatly. It is proposed that reducing the series resistance can enhance the small signal gain and reduced the noise figure of SOA efficiently.

  5. Materials Design from Nonequilibrium Steady States: Driven Graphene as a Tunable Semiconductor with Topological Properties

    NASA Astrophysics Data System (ADS)

    Iadecola, Thomas; Campbell, David; Chamon, Claudio; Hou, Chang-Yu; Jackiw, Roman; Pi, So-Young; Kusminskiy, Silvia Viola

    2013-04-01

    Controlling the properties of materials by driving them out of equilibrium is an exciting prospect that has only recently begun to be explored. In this Letter we give a striking theoretical example of such materials design: a tunable gap in monolayer graphene is generated by exciting a particular optical phonon. We show that the system reaches a steady state whose transport properties are the same as if the system had a static electronic gap, controllable by the driving amplitude. Moreover, the steady state displays topological phenomena: there are chiral edge currents, which circulate a fractional charge e/2 per rotation cycle, with the frequency set by the optical phonon frequency.

  6. Individual Cr atom in a semiconductor quantum dot: Optical addressability and spin-strain coupling

    NASA Astrophysics Data System (ADS)

    Lafuente-Sampietro, A.; Utsumi, H.; Boukari, H.; Kuroda, S.; Besombes, L.

    2016-04-01

    We demonstrate the optical addressability of the spin of an individual chromium atom (Cr) embedded in a semiconductor quantum dot. The emission of Cr-doped quantum dots and their evolution in magnetic field reveal a large magnetic anisotropy of the Cr spin induced by local strain. This results in the zero field splitting of the 0, ±1 , and ±2 Cr spin states and in a thermalization on the magnetic ground states 0 and ±1 . The observed strong spin to strain coupling of Cr is of particular interest for the development of hybrid spin-mechanical devices where coherent mechanical driving of an individual spin in an oscillator is needed. The magneto-optical properties of Cr-doped quantum dots are modeled by a spin Hamiltonian including the sensitivity of the Cr spin to the strain and the influence of the quantum dot symmetry on the carrier-Cr spin coupling.

  7. Gain transient control for wavelength division multiplexed access networks using semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Gibbon, T. B.; Osadchiy, A. V.; Kjær, R.; Jensen, J. B.; Monroy, I. Tafur

    2009-06-01

    Gain transients can severely hamper the upstream network performance in wavelength division multiplexed (WDM) access networks featuring erbium doped fiber amplifiers (EDFAs) or Raman amplification. We experimentally demonstrate for the first time using 10 Gb/s fiber transmission bit error rate measurements how a near-saturated semiconductor optical amplifier (SOA) can be used to control these gain transients. An SOA is shown to reduce the penalty of transients originating in an EDFA from 2.3 dB to 0.2 dB for 10 Gb/s transmission over standard single mode fiber using a 2 31-1 PRBS pattern. The results suggest that a single SOA integrated within a WDM receiver at the metro node could offer a convenient all-optical solution for upstream transient control in WDM access networks.

  8. Fiber Bragg grating dynamic strain sensor using an adaptive reflective semiconductor optical amplifier source.

    PubMed

    Wei, Heming; Tao, Chuanyi; Zhu, Yinian; Krishnaswamy, Sridhar

    2016-04-01

    In this paper, a reflective semiconductor optical amplifier (RSOA) is configured to demodulate dynamic spectral shifts of a fiber Bragg grating (FBG) dynamic strain sensor. The FBG sensor and the RSOA source form an adaptive fiber cavity laser. As the reflective spectrum of the FBG sensor changes due to dynamic strains, the wavelength of the laser output shifts accordingly, which is subsequently converted into a corresponding phase shift and demodulated by an unbalanced Michelson interferometer. Due to the short transition time of the RSOA, the RSOA-FBG cavity can respond to dynamic strains at high frequencies extending to megahertz. A demodulator using a PID controller is used to compensate for low-frequency drifts induced by temperature and large quasi-static strains. As the sensitivity of the demodulator is a function of the optical path difference and the FBG spectral width, optimal parameters to obtain high sensitivity are presented. Multiplexing to demodulate multiple FBG sensors is also discussed. PMID:27139682

  9. Optics education for machine operators in the semiconductor industry: moving beyond button pushing

    NASA Astrophysics Data System (ADS)

    Karakekes, Meg; Currier, Deborah

    1995-10-01

    In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

  10. Universal solders for direct and powerful bonding on semiconductors, diamond, and optical materials

    NASA Astrophysics Data System (ADS)

    Mavoori, Hareesh; Ramirez, Ainissa G.; Jin, Sungho

    2001-05-01

    The surfaces of electronic and optical materials such as nitrides, carbides, oxides, sulfides, fluorides, selenides, diamond, silicon, and GaAs are known to be very difficult to bond with low melting point solders (<300 °C). We have achieved a direct and powerful bonding on these surfaces by using low temperature solders doped with rare-earth elements. The rare earth is stored in micron-scale, finely-dispersed intermetallic islands (Sn3Lu or Au4Lu), and when released, causes chemical reactions at the interface producing strong bonds. These solders directly bond to semiconductor surfaces and provide ohmic contacts. They can be useful for providing direct electrical contacts and interconnects in a variety of electronic assemblies, dimensionally stable and reliable bonding in optical fiber, laser, or thermal management assemblies.

  11. Bound states in optical absorption of semiconductor quantum wells containing a two-dimensional electron Gas

    PubMed

    Huard; Cox; Saminadayar; Arnoult; Tatarenko

    2000-01-01

    The dependence of the optical absorption spectrum of a semiconductor quantum well on two-dimensional electron concentration n(e) is studied using CdTe samples. The trion peak (X-) seen at low n(e) evolves smoothly into the Fermi edge singularity at high n(e). The exciton peak (X) moves off to high energy, weakens, and disappears. The X,X- splitting is linear in n(e) and closely equal to the Fermi energy plus the trion binding energy. For Cd0.998Mn0.002Te quantum wells in a magnetic field, the X,X- splitting reflects unequal Fermi energies for M = +/-1/2 electrons. The data are explained by Hawrylak's theory of the many-body optical response including spin effects. PMID:11015866

  12. Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles

    NASA Astrophysics Data System (ADS)

    Yeh, Tung‑Ti; Wang, Jr‑Hau; Hsieh, Tsung‑Eong; Shieh, Han‑Ping D.

    2006-02-01

    In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (Pr) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at Pr=4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 105 readout cycles.

  13. Semiconductor optical amplifier direct modulation with double-stage birefringent fiber loop

    NASA Astrophysics Data System (ADS)

    Engel, Thomas; Rizou, Zoe V.; Zoiros, Kyriakos E.; Morel, Pascal

    2016-06-01

    The feasibility of cascading two birefringent fiber loops (BFLs) for directly modulating a conventional semiconductor optical amplifier (SOA) at a faster data rate than that being possible by its limited electrical bandwidth is demonstrated for the first time. The experimental results reveal the improvements in the quality characteristics of the encoded signal compared to those achieved with a single-stage BFL. The observed trends are complemented by numerical simulations, which allow to investigate the impact of the double-stage BFL detuning and specify how this critical parameter must be selected for enhanced performance. Provided that it is properly tailored, the proposed optical notch filtering scheme efficiently compensates for the pattern-dependent SOA response and enables this element to be employed as intensity modulator with improved performance at enhanced data speeds.

  14. Nonlinear optical parameters of nonparabolic semiconductor plasmas: Influence of energy dependent effective mass

    SciTech Connect

    Daulatabadkar, Pragya Ghosh, S.

    2015-07-31

    An investigation is carried out in III-V compound semiconductor when a strong transverse magnetic field is applied. By considering the heating effect of carriers, an analytical investigation is made for n-InSb in which the nonlinearity arises due to dependence of effective mass on electronic temperature. At optical frequencies the temperature dependence part of momentum transfer collision frequency is assumed to be negligibly small. The linear and nonlinear parts of optical parameters are evaluated through the first and third order susceptibility of InSb sample. The analysis reveals that the nonlinear part of refractive index increases with intensity which leads to self-focusing of the beam. Thus by adjusting the doping concentration pump frequency and intensity, one may achieve desired nonlinearity in the crystal. Hence n - InSb sample establishes its potentials as candidate material for fabrication of cubic nonlinear devices.

  15. Optical cross-talk effect in a semiconductor photon-counting detector array

    NASA Astrophysics Data System (ADS)

    Prochazka, Ivan; Hamal, Karel; Kral, Lukas; Blazej, Josef

    2005-09-01

    Solid state single photon detectors are getting more and more attention in various areas of applied physics: optical sensors, communication, quantum key distribution, optical ranging and Lidar, time resolved spectroscopy, opaque media imaging and ballistic photon identification. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP and InGaAs/InGaAsP at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Recently, there is a strong demand for the photon counting detector in a form of an array; even small arrays 10x1 or 3x3 are of great importance for users. Although the photon counting array can be manufactured, there exists a serious limitation for its performance: the optical cross-talk between individual detecting cells. This cross-talk is caused by the optical emission of the avalanche photon counting structure which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon shallow junction type photodiode. The timing properties, radiation pattern and spectral distribution of the emitted light have been measured for various detection structures and their different operating conditions. The ultimate limit for the cross-talk has been determined and the methods for its limitation have been proposed.

  16. Quantum confinement in semiconductor nanofilms: Optical spectra and multiple exciton generation

    NASA Astrophysics Data System (ADS)

    Khmelinskii, Igor; Makarov, Vladimir I.

    2016-04-01

    We report optical absorption and photoluminescence (PL) spectra of Si and SnO2 nanocrystalline films in the UV-vis-NIR range, featuring discrete bands resulting from transverse quantum confinement, observed in the optical spectra of nanofilms for the first time ever. The film thickness ranged from 3.9 to 12.2 nm, depending on the material. The results are interpreted within the particle-in-a-box model, with infinite walls. The calculated values of the effective electron mass are independent on the film thickness and equal to 0.17mo (Si) and 0.21mo (SnO2), with mo the mass of the free electron. The second calculated model parameter, the quantum number n of the HOMO (valence band), was also thickness-independent: 8.00 (Si) and 7.00 (SnO2). The transitions observed in absorption all start at the level n and correspond to Δn = 1, 2, 3, …. The photoluminescence bands exhibit large Stokes shifts, shifting to higher energies with increased excitation energy. In effect, nanolayers of Si, an indirect-gap semiconductor, behave as a direct-gap semiconductor, as regards the transverse-quantized level system. A prototype Si-SnO2 nanofilm photovoltaic cell demonstrated photoelectron quantum yields achieving 2.5, showing clear evidence of multiple exciton generation, for the first time ever in a working nanofilm device.

  17. Optical surface polaritons of TM type at the nonlinear semiconductor-nanocomposite interface

    NASA Astrophysics Data System (ADS)

    Panyaev, I. S.; Rozhleis, I. A.; Sannikov, D. G.

    2016-03-01

    TM-polarized optical surface polaritons in a nonlinear semiconductor-nanocomposite guiding structure have been considered. The nanocomposite consists of alternating layers of bismuth-containing garnet ferrite (BIG, Lu3 - x Bi x Fe5 - y Ga y O12) and gallium-gadolinium garnet (Gd3Ga5O12), and the semiconductor ( n-InSb) has a cubic nonlinearity and is characterized by two components of the nonlinear susceptibility tensor. With allowance for the anisotropy of the optical properties of the nanocomposite, caused by the magnetization of the BIG layers, the dispersion relation has been obtained and analyzed and its solutions are shown to split into two pairs of high- and low-frequency branches. The influence of the electric field at the interface on the wave characteristics and the existence domains of nonlinear surface TM polaritons has been studied. By solving the inverse problem of finding the profile of the longitudinal electric component of the surface polariton, it has been found that the nonlinearity gives rise to soliton-like wave fields.

  18. Orientation-patterned II-VI semiconductor waveguides for quasi-phasematched nonlinear optics

    NASA Astrophysics Data System (ADS)

    Angell, Marilyn Joy

    1999-10-01

    The ability to grow epitaxial layers of II-VI compound semiconductors on GaAs substrates, the transparency of these materials to a broad range of visible wavelengths, and their strong second order susceptibility suggest that these materials should be promising for efficient nonlinear frequency conversion by on-chip integration with III-V pump lasers. This work investigates the use of semiconductor microfabrication techniques to create II-VI waveguides with laterally-patterned crystal orientation for quasi-phasematched second harmonic generation. The fabrication of periodically-patterned <100>/<111> CdTe on <100> GaAs substrates, using epitaxial growth by metalorganic chemical vapor deposition and a lithographic patterning process, is demonstrated. This process is adapted to create ZnTe/ZnSe waveguides with periodic lateral patterning of the crystal orientation. The optical properties of planar waveguides with orientation-patterned ZnTe core layers are characterized. Second harmonic generation is measured, but does not appear to be quasi-phasematched at the test wavelength. High optical losses are observed in the patterned waveguides, and the mechanism of the loss is investigated using X-ray diffractometry, atomic force microscopy, and angle-resolved scatterometry. These measurements suggest that the losses are primarily due to bulk defects in the <111>-oriented material. Waveguide patterning using <100>-oriented anti-phase domains, which have a single axis of crystal growth, is recommended in order to overcome this problem.

  19. Structural and optical properties of silicon metal-oxide-semiconductor light-emitting devices

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Zhang, Zhengyuan; Zhang, Zhengping

    2016-01-01

    A silicon p-channel metal oxide semiconductor field-effect transistor (Si-PMOSFET) that is fully compatible with the standard complementary metal oxide semiconductor process is investigated based on the phenomenon of optical radiation observed in the reverse-biased p-n junction in the Si-PMOSFET device. The device can be used either as a two-terminal silicon diode light-emitting device (Si-diode LED) or as a three-terminal silicon gate-controlled diode light-emitting device (Si gate-controlled diode LED). It is seen that the three-terminal operating mode could provide much higher power transfer efficiency than the two-terminal operating mode. A new solution based on the concept of a theoretical quantum efficiency model combined with calculated results is proposed for interpreting the evidence of light intensity reduction at high operating voltages. The Si-LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

  20. Structural, elastic, electronic and optical properties of new layered semiconductor BaGa2P2

    NASA Astrophysics Data System (ADS)

    Bouhemadou, A.; Khenata, R.; Bin-Omran, S.; Murtaza, G.; Al-Douri, Y.

    2015-08-01

    We report the results of a detailed first-principles based density functional theory study of the structural, elastic, electronic and optical properties of a recently synthesized layered semiconductor BaGa2P2. The optimized structural parameters are in excellent agreement with the experimental structural findings, which validates the used theoretical method. The single crystal and polycrystalline elastic constants are numerically estimated using the strain-stress method and Voigt-Reuss-Hill approximations. Predicted values of the elastic constants suggest that the considered material is mechanically stable, brittle and very soft material. The three-dimensional surface and its planar projections of Young's modulus are visualized to illustrate the elastic anisotropy. It is found that Young's modulus of BaGa2P2 show strong dependence on the crystallographic directions. Band structure calculation reveals that BaGa2P2 is a direct energy band gap semiconductor. The effective masses of electrons and holes at the minimum of the conduction band and maximum of the valence band are numerically estimated. The density of state, charge density distribution and charge transfers are calculated and analyzed to determine the chemical bonding nature. Dielectric function, refractive index, extinction coefficient, absorption coefficient, reflectivity and electron-loss energy function spectra are computed for a wide photon energy range up to 20 eV. Calculated optical spectra exhibit a noticeable anisotropy.

  1. Ultrafast optical studies of surface reaction processes at semiconductor interfaces. Progress report

    SciTech Connect

    Miller, R.J.D.

    1994-10-01

    The DOE funded research has focused on the development of novel non-linear optical methods for the in situ study of surface reaction dynamics. In particular, the work has concentrated on interfacial charge transfer processes as this is the simplest of all surface reactions, i.e., no bonds are broken and the reaction is derived from nuclear repolarization. Interfacial charge transfer forms the basis for a number of important solar energy conversion strategies. In these studies, semiconductor liquid junctions provide a convenient system in which the interfacial charge transfer can be optically initiated. The all-optical approach necessitates that the dynamics of the charge transfer event itself be put in the proper context of the operating photophysical processes at the surface. There are at least four dynamical processes that are coupled in determining the overall rate of electron flux across the interface. In the limit that interfacial charge transfer approaches strong coupling, the time scale for transport of even field accelerated carriers within the space charge region becomes comparable to the charge transfer dynamics. The transport component needs to be convolved to probes of the carrier population at the surface. The other two dynamical processes, carrier thermalization and surface state trapping, determine the states which ultimately serve as the donor levels to the solution acceptor distribution. In terms of the hot carrier model, these latter two processes compete with direct unthermalized charge transfer. There is a fifth dynamical process which also needs consideration: the solvent modes that are coupled to the reaction coordinate. Ultimately, the dynamics of solvent relaxation determine the upper limit to the charge transfer process. Different optical techniques have been developed to follow all the above dynamical processes in which a real time view of charge transfer dynamics at semiconductor surfaces is emerging. These results are discussed here.

  2. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  3. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    PubMed Central

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  4. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    NASA Astrophysics Data System (ADS)

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV) (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  5. Bistability characteristics of different types of optical modes amplified by quantum dot vertical cavity semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Qasaimeh, Omar

    2016-04-01

    We have studied the characteristics of optical bistability of different types of optical modes amplified by small-size quantum dot vertical cavity semiconductor optical amplifiers operated in reflection. Our analysis reveals that TE01 mode exhibits stronger intensity-dependent non-linearity in small radius devices, which results in stronger optical phase modulation and therefore larger hysteresis width compared with the other modes. The effect of the wavelength detuning of the input signal on the shape of the hysteresis loop is studied. We find that butterfly hysteresis loop exhibits the largest hysteresis width compared with clockwise and counterclockwise loops. Our analysis reveals that doping the quantum dots with p-type doping slightly reduces the hysteresis width while doping the dots with n-type doping clearly increases the hysteresis width for any wavelength detuning. We estimate that the hysteresis width of quantum dot active layer will exhibit higher hysteresis width compared with quantum well active layer having the same threshold gain.

  6. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    PubMed Central

    Shakhvorostov, Dmitry; Nistor, Razvan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dimitri N.; Song, Young; Müser, Martin H.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class. PMID:19549858

  7. All-optical single-sideband upconversion with an optical interleaver and a semiconductor optical amplifier for radio-over-fiber applications.

    PubMed

    Kim, Hyoung-Jun; Song, Jong-In

    2009-06-01

    We propose and experimentally demonstrate an all-optical upconverter for the generation of an optical single-sideband (OSSB) signal in radio-over-fiber (RoF) systems. The OSSB signal, which is required for overcoming the fiber chromatic dispersion problem in RoF systems, is generated by using an all-optical SSB upconverter consisting of an optical interleaver and a semiconductor optical amplifier. With this upconversion technique, OSSB radio frequency (RF) signals with an RF frequency ranging from 15 GHz to 42.5 GHz are generated by mixing an optical intermediate frequency (IF) signal (1 GHz) with an optical local oscillator signal and transmitted over a 46 km standard single-mode fiber. The OSSB RF signal generated by this upconversion technique shows negligible dispersion-induced carrier suppression effects, which are usually observed for an optical double-sideband RF signal. The all-optical SSB upconverter provides high conversion efficiency of up to 29 dB and a sufficiently large spurious free dynamic range of 82 dB.Hz(2/3) for microcellular personal communication system applications. PMID:19506630

  8. TOPICAL REVIEW A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Ramsay, A. J.

    2010-10-01

    The spin of a carrier trapped in a self-assembled quantum dot has the potential to be a robust optically active qubit that is compatible with existing III-V semiconductor device technology. A key requirement for building a quantum processor is the ability to dynamically prepare, control and detect single quantum states. Here, experimental progress in the coherent optical control of single semiconductor quantum dots over the past decade is reviewed, alongside an introductory discussion of the basic principles of coherent control.

  9. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    NASA Astrophysics Data System (ADS)

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures.

  10. Magneto-optical properties of semiconductor-based superlattices having GaAs with MnAs nanoclusters

    SciTech Connect

    Shimizu, H.; Tanaka, M.

    2001-06-01

    We have fabricated semiconductor-based magnetic superlattices (SLs) containing GaAs:MnAs granular material in which MnAs nanoclusters are embedded in GaAs, and have characterized their structural, optical, and magneto-optical properties. SLs consisting of GaAs:MnAs and AlAs are shown to have good crystalline quality and excellent compatibility with nonmagnetic GaAs/AlAs heterostructures. The optical transmission properties were improved in the SLs, while keeping the strong magneto-optical properties of GaAs:MnAs. We used these magnetic SLs in a semiconductor-based magnetic microcavity as the central magnetic layer, and its optical transmission was found to have improved compared with our previous multilayer structures. {copyright} 2001 American Institute of Physics.

  11. Ellipsometric and optical study of some uncommon insulator films on 3-5 semiconductors

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Warner, J. D.; Liu, D. C.; Pouch, J. J.

    1985-01-01

    Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.

  12. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    DOE PAGESBeta

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends onmore » several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.« less

  13. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    PubMed Central

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-01-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades. PMID:26670948

  14. Ion beam nanopatterning of III-V semiconductors: Consistency of experimental and simulation trends within a chemistry-driven theory

    SciTech Connect

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-16

    In this study, several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  15. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory

    NASA Astrophysics Data System (ADS)

    El-Atwani, O.; Norris, S. A.; Ludwig, K.; Gonderman, S.; Allain, J. P.

    2015-12-01

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  16. S+C+L broadband source based on semiconductor optical amplifiers and erbium-doped fiber for optical coherence tomography

    NASA Astrophysics Data System (ADS)

    Carrion, L.; Beitel, D.; Lee, K. L.; Jain, A.; Chen, L. R.; Maciejko, R.; Nirmalathas, A.

    2007-06-01

    Broadband sources (BBSs) are commonly used in a wide range of applications in optical communication systems and biophotonics. They are particularly useful tools for Optical Coherence Tomography (OCT), which is a biomedical imaging technique that uses low-coherence light sources. In order to obtain high image quality, we have developed a novel, spectrally-flat S+C+L band source with > 120 nm bandwidth and more than 4 mW output power based on two cascaded semiconductor optical amplifiers (SOA) mixed with an Erbium-doped fiber (EDF) amplifier. Bandwidth and output power improvements are achieved by modifying the former configuration and mixing the EDF with the first SOA before amplification in the second SOA. This configuration results in bandwidth and output power enhancements of up to 146 nm and 8 mW, respectively. The source was then tested in an OCT system. It gives a 10 μm FWHM, low sidelobe OCT autocorrelation trace. Images and OCT autocorrelation traces were compared for the two aforementioned (which two; you mentioned one?) configurations. Images of miscellaneous samples made with the BBS show an image aspect and sharpness that is comparable with more expensive sources such as Ti:Sapphire lasers.

  17. Microwave phase shifter with controllable power response based on slow- and fast-light effects in semiconductor optical amplifiers.

    PubMed

    Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

    2009-04-01

    We suggest and experimentally demonstrate a method for increasing the tunable rf phase shift of semiconductor waveguides while at the same time enabling control of the rf power. This method is based on the use of slow- and fast-light effects in a cascade of semiconductor optical amplifiers combined with the use of spectral filtering to enhance the role of refractive index dynamics. A continuously tunable phase shift of approximately 240 degrees at a microwave frequency of 19 GHz is demonstrated in a cascade of two semiconductor optical amplifiers, while maintaining an rf power change of less than 1.6 dB. The technique is scalable to more amplifiers and should allow realization of an rf phase shift of 360 degrees. PMID:19340174

  18. Synthesis and nonlinear optical properties of semiconductor nanoparticles within ionomer solutions

    NASA Astrophysics Data System (ADS)

    Jia, Wenling

    For the first time, optical limiting performance of semiconductor nanoparticles was investigated thoroughly against particle size and composition with nanosecond laser pulses at 532 nm as well as picosecond laser pulses in the wavelength range between 680 and 900 nm. Measurement from degenerate four-wave mixing showed the dominance of third-order optical nonlinearity. A combination of optical limiting and DFWM measurements was used to extract the bound electronic nonlinear refraction. CdS(2), core-shell CdS(2)/Ag2S and ternary Cd1-xAgxS nanoparticles were prepared and stabilized within random/block ionomer solutions with a particle diameter range between 2 to 9 nm. UV-visible absorption spectra indicated the shift of absorption edge with respect to bulk materials. Selected area diffraction results showed for the first time that cubic CdS2 formed in solutions at room temperature. The results from the factorial experimental design revealed that---for CdS(2) in random ionomer solutions---the neutralization level and S:Cd ratio are two important factors influencing CdS(2) particle size, while the ionomer concentration and polymer composition are not significant factors. Free-carrier absorption (FCA) and two-photon absorption (TPA) are responsible for the optical limiting performance towards ns and ps pulses respectively. The derived free-carrier absorption cross section of nanoparticle solutions is about 10-18˜10-19 cm 2. The lowest limiting threshold is 0.4 J/cm2. Two-photon absorption coefficients were determined to be tens or a few hundreds cm/GW, which is significantly greater than the reported value for corresponding bulk materials. The determined nonlinear refractive indices are on the order of 10-8 esu, at least 1˜2 orders larger than that of bulk materials. These enhancements are attributed to the quantum confinement which results in different mechanisms of nonlinearity for semiconductor nanoparticles compared to bulk materials. Particles with larger size

  19. Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

    NASA Astrophysics Data System (ADS)

    Tsujikawa, Shimpei; Shiga, Katsuya; Umeda, Hiroshi; Yugami, Jiro

    2007-01-01

    The breakdown mechanism of ultrathin SiON gate dielectrics in p-type metal oxide semiconductor field effect transistors having p+gates (p+gate-pMOSFETs) has been studied. Systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFET in inversion mode, gate dielectric breakdown under stress voltage lower than -4 V is driven by oxide voltage (Vox) or oxide field (Eox), while the breakdown under stress voltage higher than -4 V is driven by gate voltage (Vg). The Vox/Eox-driven breakdown observed under low stress voltage is quite important to the reliability of low-voltage complementary metal oxide semiconductor (CMOS). By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to same mechanism as the negative bias temperature instability (NBTI), namely the interfacial hydrogen release driven by Eox, has been shown to be possible. However, direct tunneling of holes driven by Vox has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be Vox or Eox.

  20. Nano-scale measurement of biomolecules by optical microscopy and semiconductor nanoparticles

    PubMed Central

    Ichimura, Taro; Jin, Takashi; Fujita, Hideaki; Higuchi, Hideo; Watanabe, Tomonobu M.

    2014-01-01

    Over the past decade, great developments in optical microscopy have made this technology increasingly compatible with biological studies. Fluorescence microscopy has especially contributed to investigating the dynamic behaviors of live specimens and can now resolve objects with nanometer precision and resolution due to super-resolution imaging. Additionally, single particle tracking provides information on the dynamics of individual proteins at the nanometer scale both in vitro and in cells. Complementing advances in microscopy technologies has been the development of fluorescent probes. The quantum dot, a semi-conductor fluorescent nanoparticle, is particularly suitable for single particle tracking and super-resolution imaging. This article overviews the principles of single particle tracking and super resolution along with describing their application to the nanometer measurement/observation of biological systems when combined with quantum dot technologies. PMID:25120488

  1. Spin dynamics of an individual Cr atom in a semiconductor quantum dot under optical excitation

    NASA Astrophysics Data System (ADS)

    Lafuente-Sampietro, A.; Utsumi, H.; Boukari, H.; Kuroda, S.; Besombes, L.

    2016-08-01

    We studied the spin dynamics of a Cr atom incorporated in a II-VI semiconductor quantum dot using photon correlation techniques. We used recently developed singly Cr-doped CdTe/ZnTe quantum dots to access the spin of an individual magnetic atom. Auto-correlation of the photons emitted by the quantum dot under continuous wave optical excitation reveals fluctuations of the localized spin with a timescale in the 10 ns range. Cross-correlation gives quantitative transfer time between Cr spin states. A calculation of the time dependence of the spin levels population in Cr-doped quantum dots shows that the observed spin dynamics is dominated by the exciton-Cr interaction. These measurements also provide a lower bound in the 20 ns range for the intrinsic Cr spin relaxation time.

  2. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

    SciTech Connect

    Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

    2013-11-30

    A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

  3. Optically engineered ultrafast pulses for controlled rotations of exciton qubits in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Gamouras, Angela; Mathew, Reuble; Hall, Kimberley C.

    2012-07-01

    Shaped ultrafast pulses designed for controlled-rotation (C-ROT) operations on exciton qubits in semiconductor quantum dots are demonstrated using a quantum control apparatus operating at ˜1 eV. Optimum pulse shapes employing amplitude and phase shaping protocols are implemented using the output of an optical parametric oscillator and a programmable pulse shaping system, and characterized using autocorrelation and multiphoton intrapulse interference phase scan techniques. We apply our pulse characterization results and density matrix simulations to assess the fundamental limits on the fidelity of the C-ROT operation, providing a benchmark for the evaluation of sources of noise in other quantum control experiments. Our results indicate the effectiveness of pulse shaping techniques for achieving high fidelity quantum operations in quantum dots with a gate time below 1 ps.

  4. Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

    PubMed Central

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

  5. Theoretical study of the polarization dependence of third-order optical nonlinearities in semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Kwong, Nai-Hang; Takayama, Ryu; Binder, Rolf H.

    2001-07-01

    We present a microscopic theory of the coherent third order optical response of semiconductor quantum well micro cavities, specialized to the four-wave-mixing configuration in the spectral vicinity of the lowest exciton frequency. The theory is that of a quantum mechanical many-electron system dipole-coupled to a classical radiation field. The many-electron dynamics is treated within the dynamics- controlled-truncation formalism restricted to the 1s-exciton subspace. Within this limitation, al Coulomb correlation effects are included, resulting in an effective theory of exciton-polariton scattering. The theory is evaluated for various polarization configurations each of which depends differently on the underlying many-body effects, such as phase-space filing, Hartree-Fock exchange, and two-exciton correlations.

  6. Optical power of semiconductor lasers with a low-dimensional active region

    SciTech Connect

    Asryan, Levon V.; Sokolova, Zinaida N.

    2014-01-14

    A comprehensive analytical model for the operating characteristics of semiconductor lasers with a low-dimensional active region is developed. Particular emphasis is given to the effect of capture delay of both electrons and holes from a bulk optical confinement region into a quantum-confined active region and an extended set of rate equations is used. We derive a closed-form expression for the internal quantum efficiency as an explicit function of the injection current and parameters of a laser structure. Due to either electron or hole capture delay, the internal efficiency decreases with increasing injection current above the lasing threshold thus causing sublinearity of the light-current characteristic of a laser.

  7. Tapered semiconductor amplifiers for optical frequency combs in the near infrared.

    PubMed

    Cruz, Flavio C; Stowe, Matthew C; Ye, Jun

    2006-05-01

    A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780 nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17 dB(12 dB) are obtained for 1 mW(20 mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplification. These amplifiers can be used to boost the infrared power in f-to-2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources. PMID:16642104

  8. Gain recovery dynamics in semiconductor optical amplifiers with distributed feedback grating under assist light injection

    NASA Astrophysics Data System (ADS)

    Qin, Cui; Zhao, Jing; Yu, Huilong; Zhang, Jian

    2016-07-01

    The gain recovery dynamic characteristics of the semiconductor optical amplifier (SOA) with distributed feedback (DFB) grating are theoretically investigated. The interaction of the grating structure and the assist light is used to accelerate the gain recovery process in the SOA. The effects of the assist light that is injected into the SOA with DFB structure on the gain recovery dynamics, the steady-state carrier density, and field intensity distributions are analyzed, respectively. Results show that the recovery time in the DFB SOA is successfully reduced by injecting relatively high power assist light, whose wavelength is set at the gain region. Finally, under assist light injection, the effects of DFB grating on the gain recovery process are also discussed. It is shown that the gain recovery in the SOA with DFB grating is faster than that in the SOA without DFB grating. In addition, the coupling factor in the DFB grating structure can be optimized to shorten the gain recovery time.

  9. Optical Properties of Planar Nanostructures Based on Semiconductor Quantum Dots and Plasmonic Metal Nanoparticles

    NASA Astrophysics Data System (ADS)

    Bakanov, A. G.; Toropov, N. A.; Vartanyan, T. A.

    2016-03-01

    The optical properties of a composite material consisting of a thin polymer film, which is activated by semiconductor CdSe/ZnS quantum dots (QDs) and silver nanoparticles, on a transparent dielectric substrate have been investigated. It is revealed that the presence of silver nanoparticles leads to an increase in the QD absorption (by a factor of 4) and in the fluorescence intensity (by a factor of 10), whereas the fluorescence time drops by a factor of about 10. Excitation of the composite medium by a pulsed laser is found to result in narrowing of the fluorescence band and a sublinear dependence of its intensity on the pulse energy. In the absence of silver nanoparticles, the fluorescence spectrum of QDs is independent of the excitation-pulse energy density, and the fluorescence intensity depends linearly on the pulse energy in the entire range of energy densities, up to 75 mJ/cm2.

  10. Switchable semiconductor optical fiber laser incorporating AWG and broadband FBG with high SMSR

    NASA Astrophysics Data System (ADS)

    Ahmad, H.; Zulkifli, M. Z.; Thambiratnam, K.; Latiff, A. A.; Harun, S. W.

    2009-07-01

    In this paper we propose and demonstrate a switchable wavelength fiber laser (SWFL) using a semiconductor optical amplifier (SOA) together with an arrayed waveguide grating (AWG). The proposed SOA-based SWFL is capable of generating up to 14 lasing channels from 1530.1 nm to 1534.9 nm at a channel spacing of 0.8 nm (100 GHz) and a bandwidth of 11.8 and 10.2 nm respectively. The EDFA-based SWFL has a higher peak power at -5 dBm, while to SOA-based SWFL has a peak power of only -10 dBm. However, the SOA-based SWFL exhibits a much better SMSR of between 10 to 20 dB as compared to the SMSR of the EDFA-based SWFL due to the inhomogeneous broadening properties of the SOA.

  11. The role of input chirp on phase shifters based on slow and fast light effects in semiconductor optical amplifiers.

    PubMed

    Xue, Weiqi; Chen, Yaohui; Ohman, Filip; Mørk, Jesper

    2009-02-01

    We experimentally investigate the initial chirp dependence of slow and fast light effects in a semiconductor optical amplifier followed by an optical filter. It is shown that the enhancement of the phase shift due to optical filtering strongly depends on the chirp of the input optical signal. We demonstrate approximately 120 degrees phase delay as well as approximately 170 degrees phase advance at a microwave frequency of 19 GHz for different optimum values of the input chirp. The experimental results are shown to be in good agreement with numerical results based on a four-wave mixing model. Finally, a simple physical explanation based on an analytical perturbative approach is presented. PMID:19188968

  12. Wide bandwidth chaotic signal generation in a monolithically integrated semiconductor laser via optical injection

    NASA Astrophysics Data System (ADS)

    Yin, Xue-Mei; Zhong, Zhu-Qiang; Zhao, Ling-Juan; Lu, Dan; Qiu, Hai-Ying; Xia, Guang-Qiong; Wu, Zheng-Mao

    2015-11-01

    Wide bandwidth chaotic signal generation in a three-section monolithically integrated semiconductor laser (MISL) under external optical injection is investigated experimentally. Through evaluating the effective bandwidth of chaotic signals, the influences of the optical injection on the bandwidth of chaotic signal from the MISL are analyzed. The experimental results indicate that, for the currents of the DFB section (IDFB) and the phase section (IP) are fixed at 70.00 mA and 34.00 mA, respectively, the effective bandwidth of chaos signal generated by the solitary MISL reaches its maximum value of 14.36 GHz when the current of the amplification section (IA) takes 23.22 mA. After an external optical injection is introduced into the MISL, the effective bandwidth of the generated chaotic signal can be beyond 2.5 times of the maximum value. Furthermore, the effects of the injection strength and the frequency detuning on the effective bandwidth of the generated chaotic signal are also discussed.

  13. 2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response

    NASA Astrophysics Data System (ADS)

    Riefer, A.; Rauls, E.; Schmidt, W. G.; Eberhard, J.; Stoll, I.; Mattay, J.

    2012-04-01

    Calculations based on (occupation constrained) density functional theory using local as well as hybrid functionals to describe the electron-electron exchange and correlation are combined with many-body perturbation theory in order to determine and rationalize the electronic and optical excitation properties of 2-aminopyrimidine-silver(I) based organic semiconductors and their parent molecules. Large quasiparticle shifts and exciton binding energies of about 4 eV are found in the aminopyrimidine molecules. Both the quasiparticle blueshift and the excitonic redshift are reduced upon crystal formation. They cancel each other partially and thus allow for a meaningful description of the molecular and crystal optical response within the independent-particle approximation. We find a surprisingly strong influence of local-field effects as well as resonant-nonresonant coupling terms in the electron-hole Hamiltonian on the optical properties. The calculations reproduce well measured data and allow for identifying chemical trends with respect to the organic building blocks of the crystals.

  14. Wideband model of a reflective tensile-strained bulk semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Connelly, M. J.

    2014-05-01

    Reflective semiconductor optical amplifiers (RSOAs) have shown promise for applications in WDM optical networks and in fiber ring mode-locked lasers. Polarization insensitive SOAs can be fabricated using tensile-strained bulk material and a rectangular cross section waveguide. The introduction of tensile strain can be used to compensate for the different confinement factors experienced by the waveguide TE and TM modes. There is a need for models that can be used to predict RSOA static characteristics such as the dependency of the signal gain on bias current and input optical power, the amplified spontaneous emission spectrum and noise figure. In this paper we extend our prior work on non-reflective SOAs to develop a static model that includes facet reflections. The model uses a detailed band structure description, which is used to determine the wavelength and carrier density dependency of the material gain and additive spontaneous emission. The model and includes a full geometrical description of the amplifier waveguide, including the input taper and the position dependency of the TE/TM confinement factors. The amplified signal and spontaneous emission are described by detailed travelling-wave equations and numerically solved in conjunction with a carrier density rate equation. The model uses material and geometric parameters for a commercially available RSOA. The versatility of the model is shown by several simulations that are used to predict the SOA operational characteristics as well as internal variables such as the amplified spontaneous emission and signal and the carrier density.

  15. Ultra broadband microwave frequency combs generated by an optical pulse-injected semiconductor laser.

    PubMed

    Juan, Yu-Shan; Lin, Fan-Yi

    2009-10-12

    We have demonstrated and characterized the generation of ultra broadband microwave frequency combs with an optical pulse-injected semiconductor laser. Through optical pulse injection, the microwave frequency combs generated in the slave laser (SL) have bandwidths greater than 20 GHz within a +/-5 dB amplitude variation, which is almost 3-fold of the 7 GHz relaxation oscillation frequency of the laser used. The line spacing of the comb is tunable from 990 MHz to 2.6 GHz, determined by the repetition frequency of the injection optical pulses produced by the master laser (ML) with optoelectronic feedback. At an offset frequency of 200 kHz, a single sideband (SSB) phase noise of -60 dBc/kHz (-90 dBc/Hz estimated) in the 1(st) harmonic is measured while a noise suppression relative to the injected regular pulsing state of the ML of more than 25 dB in the 17(th) harmonic is achieved. A pulsewidth of 29 ps and a ms timing jitter of 18.7 ps are obtained in the time domain for the microwave frequency comb generated. Further stabilization is realized by modulating the ML at the fundamental frequency of the injected regular pulsing state. The feasibility of utilizing the generated microwave frequency comb in frequency conversion and signal broadcasting is also explored. The conversion gain of each channel increases linearly as the signal power increases with a ratio of about 0.81 dB/dBm. PMID:20372590

  16. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

    PubMed Central

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

  17. Optical Control of Semiconductor Quantum Dot Spin Qubits with Microcavity Exciton-Polaritons

    NASA Astrophysics Data System (ADS)

    Puri, Shruti; McMahon, Peter L.; Yamamoto, Yoshihisa

    2015-03-01

    Topological surface codes demand the least stringent threshold conditions and are most promising for implementing large quantum algorithms. Based on the resource requirements to reach fault tolerance, we develop a hardware platform for large scale quantum computation with semiconductor quantum dot (QD) electron spin qubits. The current proposals for implementation of two-qubit gates and quantum non demolition (QND) readout in a QuDOS (Quantum Dots with Optically Controlled Spins) architecture suffer from large error rates. In our scheme, the optical manipulation of the QD spin qubits is carried out using their Coulomb exchange interaction with optically excited, spin-polarized, laterally confined quantum well (LcQW) exciton-polaritons. The small mass of polaritons protects them from interaction with their solid-state environment (phonons) and enables strong coupling between spin qubits separated by a few microns. Furthermore, the excitation manifold of the QD is well separated from that of the LcQW polaritons, preventing a spin-flip event during readout. We will outline schemes for implementing fast, high-fidelity, single qubit gate, two-qubit geometric phase gate and single-shot QND measurement and analyze important decoherence mechanisms. The work being presented was carried out at Stanford University. Currently the author is at University of Sherbrooke, Canada.

  18. Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

    NASA Astrophysics Data System (ADS)

    Nkanta, Julie E.; Maldonado-Basilio, Ramón; Abdul-Majid, Sawsan; Zhang, Jessica; Hall, Trevor J.

    2013-12-01

    An exhausted capacity of current Passive Optical Networks has been anticipated as bandwidth-hungry applications such as HDTV and 3D video become available to end-users. To enhance their performance, the next generation optical access networks have been proposed, using optical carriers allocated within the E-band (1360-1460 nm). It is partly motivated by the low-water peak fiber being manufactured by Corning. At these wavelengths, choices for low cost optical amplifiers, with compact size, low energy consumption and feasibility for integration with other optoelectronic components are limited, making the semiconductor optical amplifiers (SOA) a realistic solution. An experimental characterization of a broadband and low polarization sensitive asymmetric multi quantum well (MQW) SOA operating in the E-band is reported. The SOA device is composed of nine 6 nm In1-xGaxAsyP1-y 0.2% tensile strained asymmetric MQW layers sandwiched between nine latticed matched 6 nm InGaAsP barrier layers. The active region is grown on an n-doped InP substrate and buried by p-doped InGaAsP layers. The SOA devices have 7-degrees tilt anti-reflected coated facets, with 2 μm ridge width, and a cavity length of 900 μm. For input powers of -10 dBm and -20 dBm, a maximum gain of 20 dB at 1360 nm with a polarization insensitivity under 3 dB for over 90 nm bandwidth is measured. Polarization sensitivity of less than 0.5 dB is observed for some wavelengths. Obtained results indicate a promising SOA with broadband amplification, polarization insensitivity and high gain. These SOAs were designed and characterized at the Photonics Technology Laboratory, University of Ottawa, Canada.

  19. Experimental demonstration of enhanced slow and fast light by forced coherent population oscillations in a semiconductor optical amplifier.

    PubMed

    Berger, Perrine; Bourderionnet, Jérôme; de Valicourt, Guilhem; Brenot, Romain; Bretenaker, Fabien; Dolfi, Daniel; Alouini, Mehdi

    2010-07-15

    We experimentally demonstrate enhanced slow and fast light by forced coherent population oscillations in a semiconductor optical amplifier at gigahertz frequencies. This approach is shown to rely on the interference between two different contributions. This opens up the possibility of conceiving a controllable rf phase shifter based on this setup. PMID:20634862

  20. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  1. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  2. Experimental demonstration of optical phase conjugation using counter-propagating dual pumped four-wave mixing in semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Anchal, Abhishek; Pradeep Kumar, K.; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

    2016-06-01

    We report optical phase conjugation in C-band by counter-propagating dual pumped non-degenerate four-wave mixing in a semiconductor optical amplifier (SOA). The co-propagating signal and pump waves create a grating inside SOA which diffracts counter-propagating pump and generates the conjugate wave. Since the signal and conjugate waves appear at opposite ends, the conjugate is easily filtered out from the rest of spectrum with minimal spectral shift of the conjugate with respect to the incoming signal. With pump powers of -3.2 dBm each and signal input power of -7 dBm, conjugate power was of -27.2 dBm, giving a conversion efficiency of 1% at 18 GHz pump-signal detuning. By modulating the signal by a periodic pattern '1000' at 10 Gbps using a non-zero chirp intensity modulator and resolving the temporal profile of the electric field envelope of the conjugate wave, we demonstrate spectral inversion.

  3. Micro-Ball-Lens Optical Switch Driven by SMA Actuator

    NASA Technical Reports Server (NTRS)

    Yang, Eui-Hyeok

    2003-01-01

    The figure is a simplified cross section of a microscopic optical switch that was partially developed at the time of reporting the information for this article. In a fully developed version, light would be coupled from an input optical fiber to one of two side-by-side output optical fibers. The optical connection between the input and the selected output fiber would be made via a microscopic ball lens. Switching of the optical connection from one output fiber to another would be effected by using a pair of thin-film shape-memory-alloy (SMA) actuators to toggle the lens between two resting switch positions. There are many optical switches some made of macroscopic parts by conventional fabrication techniques and some that are microfabricated and, hence, belong to the class of microelectromechanical systems (MEMS). Conventionally fabricated optical switches tend to be expensive. MEMS switches can be mass-produced at relatively low cost, but their attractiveness has been diminished by the fact that, heretofore, MEMS switches have usually been found to exhibit high insertion losses. The present switch is intended to serve as a prototype of low-loss MEMS switches. In addition, this is the first reported SMA-based optical switch. The optical fibers would be held in V grooves in a silicon frame. The lens would have a diameter of 1 m; it would be held by, and positioned between, the SMA actuators, which would be made of thin films of TiNi alloy. Although the SMA actuators are depicted here as having simple shapes for the sake of clarity of illustration, the real actuators would have complex, partly net-like shapes. With the exception of the lens and the optical fibers, the SMA actuators and other components of the switch would be made by microfabrication techniques. The components would be assembled into a sandwich structure to complete the fabrication of the switch. To effect switching, an electric current would be passed through one of the SMA actuators to heat it above

  4. 2.6 W optically-pumped semiconductor disk laser operating at 1.57-microm using wafer fusion.

    PubMed

    Rautiainen, Jussi; Lyytikäinen, Jari; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

    2008-12-22

    We report a wafer fused high power optically pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 microm was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers. PMID:19104620

  5. Phonon coupling in optical transitions for singlet-triplet pairs of bound excitons in semiconductors

    NASA Astrophysics Data System (ADS)

    Pistol, M. E.; Monemar, B.

    1986-05-01

    A model is presented for the observed strong difference in selection rules for coupling of phonons in the one-phonon sideband of optical spectra related to bound excitons in semiconductors. The present treatment is specialized to the case of a closely spaced pair of singlet-triplet character as the lowest electronic states, as is common for bound excitons associated with neutral complexes in materials like GaP and Si. The optical transition for the singlet bound-exciton state is found to couple strongly only to symmetric A1 modes. The triplet state has a similar coupling strength to A1 modes, but in addition strong contributions are found for replicas corresponding to high-density-of-states phonons TAX, LAX, and TOX. This can be explained by a treatment of particle-phonon coupling beyond the ordinary adiabatic approximation. A weak mixing between the singlet and triplet states is mediated by the phonon coupling, as described in first-order perturbation theory. The model derived in this work, for such phonon-induced mixing of closely spaced electronic states, is shown to explain the observed phonon coupling for several bound-exciton systems of singlet-triplet character in GaP. In addition, the observed oscillator strength of the forbidden triplet state may be explained as partly derived from phonon-induced mixing with the singlet state, which has a much larger oscillator strength.

  6. Semiconductor optical amplifiers and Raman amplification for 1310-nm dense wavelength division multiplexed transmission

    NASA Astrophysics Data System (ADS)

    Mazurek, Paweł; Czyżak, Paweł; de Waardt, Huug; Turkiewicz, Jarosław Piotr

    2015-11-01

    We investigate the utilization of semiconductor optical amplifiers (SOAs) and quantum-dot laser-based Raman amplifiers in high-capacity dense wavelength division multiplexed (DWDM) 1310-nm transmission systems. Performed simulations showed that in a 10×40 Gbit/s system, the utilization of a single Raman amplifier in a back-propagation scheme can extend the maximum error-free (bit error rate <10-9) transmission distance by approximately 25 km in comparison with the same system utilizing only an SOA used as a preamplifier. We successfully applied a Raman amplifier in an 8×2×40 Gbit/s 1310-nm polarization multiplexed (PolMux) DWDM transmission over 25 km. Conducted experiments showed that the utilization of a Raman amplifier in this system leads to 4-dB improvement of the average channel sensitivity in comparison to the same system utilizing SOAs. This sensitivity improvement can be translated into a higher power budget. Moreover, lower input optical power in a system utilizing a Raman amplifier reduces the four-wave mixing interactions. The obtained results prove that Raman amplification can be successfully applied in 1310-nm high-capacity transmission systems, e.g., to extend the reach of 400G and 1T Ethernet systems.

  7. Structural modification of semiconductor optical amplifiers for wavelength division multiplexing systems

    NASA Astrophysics Data System (ADS)

    Singh, Surinder

    2011-01-01

    In this paper, the semiconductor optical amplifier is analyzed for in-line and pre-amplifier for wavelength division multiplexing (WDM) transmission having minimum crosstalk and power penalty with sufficient gain. It is evaluated that the cross gain saturation of the SOA can be reduced by settling crosstalk at lower level and also minimizing the power penalty by slight increase in the confinement factor. At an optimal confinement factor of 0.41069, high amplification is obtained up to saturation power of 20.804 mW. For this confinement factor, low crosstalk of -9.63 dB and amplified spontaneous emission noise power of 119.4 μW are obtained for -15 dBm input signal. It has been demonstrated for the first time that twenty channels at 10 Gb/s WDM can transmit up to 5600 km by use of this optimization. In this, cascading of in-line SOA is done at the span of 70 km for return zero differential phase shift keying modulation format with the channel spacing of 100 GHz. The optical power spectrum and clear eye are observed at the transmission distance of 4340 and 5600 km in RZ-DPSK system. The bit error rate for all channels increases more than 10 -10 with the increase in launched input power.

  8. The next generation in optical transport semiconductors: IC solutions at the system level

    NASA Astrophysics Data System (ADS)

    Gomatam, Badri N.

    2005-02-01

    In this tutorial overview, we survey some of the challenging problems facing Optical Transport and their solutions using new semiconductor-based technologies. Advances in 0.13um CMOS, SiGe/HBT and InP/HBT IC process technologies and mixed-signal design strategies are the fundamental breakthroughs that have made these solutions possible. In combination with innovative packaging and transponder/transceiver architectures IC approaches have clearly demonstrated enhanced optical link budgets with simultaneously lower (perhaps the lowest to date) cost and manufacturability tradeoffs. This paper will describe: *Electronic Dispersion Compensation broadly viewed as the overcoming of dispersion based limits to OC-192 links and extending link budgets, *Error Control/Coding also known as Forward Error Correction (FEC), *Adaptive Receivers for signal quality monitoring for real-time estimation of Q/OSNR, eye-pattern, signal BER and related temporal statistics (such as jitter). We will discuss the theoretical underpinnings of these receiver and transmitter architectures, provide examples of system performance and conclude with general market trends. These Physical layer IC solutions represent a fundamental new toolbox of options for equipment designers in addressing systems level problems. With unmatched cost and yield/performance tradeoffs, it is expected that IC approaches will provide significant flexibility in turn, for carriers and service providers who must ultimately manage the network and assure acceptable quality of service under stringent cost constraints.

  9. Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

    2011-07-01

    The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

  10. Synthesis, optical properties, and microstructure of semiconductor nanocrystals formed by ion implantation

    SciTech Connect

    Budai, J.D.; White, C.W.; Withrow, S.P.; Zuhr, R.A.; Zhu, J.G.

    1996-12-01

    High-dose ion implantation, followed by annealing, has been shown to provide a versatile technique for creating semiconductor nanocrystals encapsulated in the surface region of a substrate material. The authors have successfully formed nanocrystalline precipitates from groups IV (Si, Ge, SiGe), III-V (GaAs, InAs, GaP, InP, GaN), and II-VI (CdS, CdSe, CdS{sub x}Se{sub 1{minus}x}, CdTe, ZnS, ZnSe) in fused silica, Al{sub 2}O{sub 3} and Si substrates. Representative examples will be presented in order to illustrate the synthesis, microstructure, and optical properties of the nanostructured composite systems. The optical spectra reveal blue-shifts in good agreement with theoretical estimates of size-dependent quantum-confinement energies of electrons and holes. When formed in crystalline substrates, the nanocrystal lattice structure and orientation can be reproducibly controlled by adjusting the implantation conditions.

  11. Free-carrier effects on electronic and optical properties of binary oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Schleife, Andre; Roedl, Claudia

    2014-03-01

    While there is persistent interest in oxides, e.g., for semiconductor technology or optoelectronics, it remains difficult to achieve n-type and p-type doping of one and the same material. At the same time, higher and higher conductivities are reported for both types of doping individually. Hence, it is important to understand the corresponding influence of free carriers on electronic structure and optical properties. Modern electronic-structure calculations, based on hybrid exchange-correlation functionals and the GW approximation, were performed for n-type (ZnO, CdO, SnO2) and p-type (MnO, NiO) binary oxides. We use these results to analyze the influence of free carriers by computing contributions that increase (Burstein-Moss shift) or reduce (electron-electron interaction and ionized-impurity scattering) the band gaps as a function of free-carrier concentration. We also compute the carrier-concentration dependence of effective electron and hole masses and compare to experimental data. For n-type ZnO we compute optical absorption spectra by means of a recent extension of the Bethe-Salpeter framework. This allows us to take excitonic effects as well as the influence of free carriers on the electron-hole interaction into account. Prepared by LLNL under Contract DE-AC52-07NA27344.

  12. Modeling of optically controlled reflective bistability in a vertical cavity semiconductor saturable absorber

    NASA Astrophysics Data System (ADS)

    Mishra, L.

    2015-05-01

    Bistability switching between two optical signals has been studied theoretically utilizing the concept of cross absorption modulation in a vertical cavity semiconductor saturable absorber (VCSSA). The probe beam is fixed at a wavelength other than the low power cavity resonance wavelength, which exhibits bistable characteristic by controlling the power of a pump beam (λpump≠λprobe). The cavity nonlinear effects that arises simultaneously from the excitonic absorption bleaching, and the carrier induced nonlinear index change has been considered in the model. The high power absorption in the active region introduces thermal effects within the nonlinear cavity due to which the effective cavity length changes. This leads to a red-shift of the cavity resonance wavelength, which results a change in phase of the optical fields within the cavity. In the simulation, the phase-change due to this resonance shifting is considered to be constant over time, and it assumes the value corresponding to the maximum input power. Further, an initial phase detuning of the probe beam has been considered to investigate its effect on switching. It is observed from the simulated results that, the output of the probe beam exhibits either clockwise or counter-clockwise bistability, depending on its initial phase detuning.

  13. Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

    NASA Astrophysics Data System (ADS)

    Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

    2015-03-01

    The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

  14. Electro-optical and nonlinear optical coefficients of ordered group IV semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Soref, R. A.

    1992-07-01

    Miller's delta δ14(2ω) of 0.0172 m2/C is found for β-SiC at 1.1 μm from the measured Pockels coefficient r41 [Appl. Phys. Lett. 59, 1938 (1991)]. Assuming δ is constant, we estimate that r41 for zincblende SiC, GeC, SiGe, SiSn, GeSn, and SnC is in the range 2.7 to 11.3 pm/V. For these binary materials, the optical second-harmonic coefficient d14(2ω) is estimated to be 30 to 1160 pm/V. Similar coefficients are expected for the ordered alloys GeSiC, SnSiC, SiGeSn, SnGeC, and SiGeCSn.

  15. Arbitrary GRIN component fabrication in optically driven diffusive photopolymers.

    PubMed

    Urness, Adam C; Anderson, Ken; Ye, Chungfang; Wilson, William L; McLeod, Robert R

    2015-01-12

    We introduce a maskless lithography tool and optically-initiated diffusive photopolymer that enable arbitrary two-dimensional gradient index (GRIN) polymer lens profiles. The lithography tool uses a pulse-width modulated deformable mirror device (DMD) to control the 8-bit gray-scale intensity pattern on the material. The custom polymer responds with a self-developing refractive index profile that is non-linear with optical dose. We show that this nonlinear material response can be corrected with pre-compensation of the intensity pattern to yield high fidelity, optically induced index profiles. The process is demonstrated with quadratic, millimeter aperture GRIN lenses, Zernike polynomials and GRIN Fresnel lenses. PMID:25835673

  16. Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

    DOE PAGESBeta

    Velizhanin, Kirill A.

    2016-05-25

    We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, asmore » such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.« less

  17. Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality.

    PubMed

    Mesaritakis, Charis; Kapsalis, Alexandros; Simos, Hercules; Simos, Christos; Krakowski, Michel; Krestnikov, Igor; Syvridis, Dimitris

    2013-07-15

    In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam. PMID:23939062

  18. Study of hybrid driven micromirrors for 3-D variable optical attenuator applications.

    PubMed

    Koh, Kah How; Soon, Bo Woon; Tsai, Julius Minglin; Danner, Aaron J; Lee, Chengkuo

    2012-09-10

    Aluminium-coated micromirrors driven by electrothermal and electromagnetic actuations have been demonstrated for 3-D variable optical attenuation applications. Three types of attenuation schemes based on electrothermal, electromagnetic and hybrid, i.e. combination of electrothermal and electromagnetic, actuations have been developed. In addition, two different designs have been fabricated and characterized to investigate the effects of the variations made to both the actuators on the optical attenuation performances of the micromirror. Our unique design of using both ET and EM actuators simultaneously to achieve attenuation is the first demonstration of such hybrid driven CMOS compatible MEMS VOA device. PMID:23037278

  19. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  20. Adaptive Integrated Optical Bragg Grating in Semiconductor Waveguide Suitable for Optical Signal Processing

    NASA Astrophysics Data System (ADS)

    Moniem, T. A.

    2016-05-01

    This article presents a methodology for an integrated Bragg grating using an alloy of GaAs, AlGaAs, and InGaAs with a controllable refractive index to obtain an adaptive Bragg grating suitable for many applications on optical processing and adaptive control systems, such as limitation and filtering. The refractive index of a Bragg grating is controlled by using an external electric field for controlling periodic modulation of the refractive index of the active waveguide region. The designed Bragg grating has refractive indices programmed by using that external electric field. This article presents two approaches for designing the controllable refractive indices active region of a Bragg grating. The first approach is based on the modification of a planar micro-strip structure of the iGaAs traveling wave as the active region, and the second is based on the modification of self-assembled InAs/GaAs quantum dots of an alloy from GaAs and InGaAs with a GaP traveling wave. The overall design and results are discussed through numerical simulation by using the finite-difference time-domain, plane wave expansion, and opto-wave simulation methods to confirm its operation and feasibility.

  1. Optical field emission from resonant gold nanorods driven by femtosecond mid-infrared pulses

    SciTech Connect

    Kusa, F.; Echternkamp, K. E.; Herink, G.; Ropers, C.; Ashihara, S.

    2015-07-15

    We demonstrate strong-field photoelectron emission from gold nanorods driven by femtosecond mid-infrared optical pulses. The maximum photoelectron yield is reached at the localized surface plasmon resonance, indicating that the photoemission is governed by the resonantly-enhanced optical near-field. The wavelength- and field-dependent photoemission yield allows for a noninvasive determination of local field enhancements, and we obtain intensity enhancement factors close to 1300, in good agreement with finite-difference time domain computations.

  2. Optically driven oscillations of ellipsoidal particles. Part I: experimental observations.

    PubMed

    Mihiretie, B M; Snabre, P; Loudet, J-C; Pouligny, B

    2014-12-01

    We report experimental observations of the mechanical effects of light on ellipsoidal micrometre-sized dielectric particles, in water as the continuous medium. The particles, made of polystyrene, have shapes varying between near disk-like (aspect ratio k = 0.2) to very elongated needle-like (k = 8). Rather than the very tightly focused beam geometry of optical tweezers, we use a moderately focused laser beam to manipulate particles individually by optical levitation. The geometry allows us varying the longitudinal position of the particle, and to capture images perpendicular to the beam axis. Experiments show that moderate-k particles are radially trapped with their long axis lying parallel to the beam. Conversely, elongated (k > 3) or flattened (k < 0.3) ellipsoids never come to rest, and permanently "dance" around the beam, through coupled translation-rotation motions. The oscillations are shown to occur in general, be the particle in bulk water or close to a solid boundary, and may be periodic or irregular. We provide evidence for two bifurcations between static and oscillating states, at k ≈ 0.33 and k ≈ 3 for oblate and prolate ellipsoids, respectively. Based on a recently developed 2-dimensional ray-optics simulation (Mihiretie et al., EPL 100, 48005 (2012)), we propose a simple model that allows understanding the physical origin of the oscillations. PMID:25577402

  3. All-optical quantization and coding scheme for ultrafast analog-to-digital conversion exploiting polarization switches based on nonlinear polarization rotation in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Wen, Huashun; Wang, Hongxiang; Ji, Yuefeng

    2012-08-01

    A novel all-optical quantization and coding scheme for ultrafast analog-to-digital (A/D) conversion exploiting polarization switches (PSWs) based on nonlinear polarization rotation (NPR) in semiconductor optical amplifiers (SOAs) is proposed. In addition, a theoretical model for the polarization switch based on NPR is presented. Through cascading two PSWs, a 2-period transfer function for 3-bit long all-optical quantization and coding is realized numerically for the first time to the authors' knowledge. The effective number of bits (ENOB), the limitation of bandwidth and conversion speed and the scalability are also investigated. The proposed all-optical quantization and coding scheme, combined with existing all-optical sampling techniques, will enable ultrafast A/D conversion at operating speed of hundreds of Gs/s with at least 3 bit resolution, and allows low optical power requirements, photonic integration, and easy scalability.

  4. Development of new generation of perovskite based noble metal/semiconductor photocatalysts for visible-light-driven hydrogen production

    NASA Astrophysics Data System (ADS)

    Shen, Peichuan

    In recent decades, semiconductor photocatalysis has attracted a growing attention as a possible alternative to existing methods of hydrogen production, hydrocarbon conversion and organic compound oxidation. Many types of photocatalysts have been developed and tested for photocatalytic applications. However, most of them do not have notable activity in visible light region, which limits their practical applications. Development of photocatalysts, which can be activated by visible light provides a promising way forward to utilize both UV and visible portions of solar spectrum. In this thesis, two main methods to advance visible light driven photocatalysis, such as bandgap modification through doping and co-catalyst development, are investigated. The photocatalysts studied in this thesis included CdS and SrTiO3, which were extensively investigated and characterized. Rhodium doped strontium titanate was synthesized through different preparation methods. The synthesized samples have been investigated by various characterization techniques including XRD, TEM, STEM, XPS and UV-Vis spectroscopy. The effect of preparation conditions, such as doping concentration, calcination temperature and pH have been investigated and optimized. In addition, the photocatalytic activities for hydrogen production of the samples synthesized by different preparation methods were also studied. Among the preparation methods, polymerizable complex (PC) method was found to be the most effective synthesis method for SrTiO3: Rh. The samples prepared by PC method had higher photocatalytic activity as compared to that of samples synthesized by solid state reaction method and hydrothermal method. The reasons might be attributed to more effective doping and higher surface area. The results of this work suggest that PC method can also be applied to develop other perovskite materials for photocatalytic applications. Co-catalyst development for enhancement of photocatalytic hydrogen production is also

  5. Optical Control of Intersubband Absorption in a Multiple Quantum Well-Embedded Semiconductor Microcravity

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Ning, Cun-Zheng

    2000-01-01

    Optical intersubband response of a multiple quantum well (MQW)-embedded microcavity driven by a coherent pump field is studied theoretically. The n-type doped MQW structure with three subbands in the conduction band is sandwiched between a semi-infinite medium and a distributed Bragg reflector (DBR). A strong pump field couples the two upper subbands and a weak field probes the two lower subbands. To describe the optical response of the MQW-embedded microcavity, we adopt a semi-classical nonlocal response theory. Taking into account the pump-probe interaction, we derive the probe-induced current density associated with intersubband transitions from the single-particle density-matrix formalism. By incorporating the current density into the Maxwell equation, we solve the probe local field exactly by means of Green's function technique and the transfer-matrix method. We obtain an exact expression for the probe absorption coefficient of the microcavity. For a GaAs/Al(sub x)Ga(sub 1-x)As MQW structure sandwiched between a GaAs/AlAs DBR and vacuum, we performed numerical calculations of the probe absorption spectra for different parameters such as pump intensity, pump detuning, and cavity length. We find that the probe spectrum is strongly dependent on these parameters. In particular, we find that the combination of the cavity effect and the Autler-Townes effect results in a triplet in the optical spectrum of the MQW system. The optical absorption peak value and its location can be feasibly controlled by varying the pump intensity and detuning.

  6. Terahertz magneto-optics in the ferromagnetic semiconductor HgCdCr2Se4

    NASA Astrophysics Data System (ADS)

    Huisman, T. J.; Mikhaylovskiy, R. V.; Telegin, A. V.; Sukhorukov, Yu. P.; Granovsky, A. B.; Naumov, S. V.; Rasing, Th.; Kimel, A. V.

    2015-03-01

    The magneto-optical response of the ferromagnetic semiconductor HgCdCr2Se4 at terahertz (THz) frequencies is studied using polarization sensitive THz time-domain spectroscopy. It is shown that the polarization state of broadband terahertz pulses, with a spectrum spanning from 0.2 THz to 2.2 THz, changes as an even function of the magnetization of the medium. Analysing the ellipticity and the rotation of the polarization of the THz radiation, we show that these effects originate from linear birefringence and dichroism, respectively, induced by the magnetic ordering. These effects are rather strong and reach 102 rad/m at an applied field of 1 kG which saturates the magnetization of the sample. Our observation serves as a proof-of-principle showing strong effects of the magnetic order on the response of a medium to electric fields at THz frequencies. These experiments also suggest the feasibility of spin-dependent transport measurements on a sub-picosecond timescale.

  7. Pulse propagation and optically controllable switch in coupled semiconductor-double-quantum-dot nanostructures

    NASA Astrophysics Data System (ADS)

    Hamedi, H. R.

    2016-05-01

    The problem of pulse propagation is theoretically investigated through a coupled semiconductor-double-quantum-dot (SDQD) nanostructure. Solving the coupled Maxwell-Bloch equations for the SDQD and field simultaneously, the dynamic control of pulse propagation through the medium is numerically explored. It is found that when all the control fields are in exact resonance with their corresponding transitions, a weak Gaussian-shaped probe pulse is transmitted through the medium nearly without any significant absorption and losses so that it can preserve its shape for quite a long propagation distance. In contrast, when one of the control fields is not in resonance with its corresponding transition, the probe pulse will be absorbed by the QD medium after a short distance. Then we consider the probe pulses with higher intensities. It is realized that an intense probe pulse experiences remarkable absorption and broadening during propagation. Finally, we demonstrate that this SDQD system can be employed as an optically controllable switch for the wave propagation to transit from an absorbing phase to a perfect transparency for the probe field. The required time for such switch is also estimated through realistic values.

  8. Theoretical simulation of carrier capture and relaxation rates in quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Wu, Yunhu; Zhang, Guoping; Guo, Ling; Qi, Guoqun; Li, Xiaoming

    2014-06-14

    Based on Auger scattering mechanism, carrier-carrier scattering dynamics between the two-dimensional carrier reservoir (also called wetting layer, i.e., WL) and the confined quantum dot ground and first excited state in quantum-dot semiconductor optical amplifiers (QD-SOAs) are investigated theoretically in this paper. The scattering rates for independent electron and hole densities are calculated. The results show an ultra-fast carrier capture (relaxation) rate up to 1 ps{sup −1}, and there is a complex dependence of the Coulomb scattering rates on the WL electron and hole densities. In addition, due to the different effective mass and the level distribution, the scattering rates for electron and hole are very different. Finally, in order to provide a direction to control (increase or decrease) the input current in realistic QD-SOA systems, a simple method is proposed to determine the trends of the carrier recovery rates with the WL carrier densities in the vicinity of the steady-state.

  9. Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors

    NASA Astrophysics Data System (ADS)

    Kraczek, Brent; Kanp, Jaroslaw

    Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.

  10. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements. PMID:23207374

  11. High Photoluminescence Efficiency and Optically Pumped Lasing in Solution-Processed Mixed Halide Perovskite Semiconductors.

    PubMed

    Deschler, Felix; Price, Michael; Pathak, Sandeep; Klintberg, Lina E; Jarausch, David-Dominik; Higler, Ruben; Hüttner, Sven; Leijtens, Tomas; Stranks, Samuel D; Snaith, Henry J; Atatüre, Mete; Phillips, Richard T; Friend, Richard H

    2014-04-17

    The study of the photophysical properties of organic-metallic lead halide perovskites, which demonstrate excellent photovoltaic performance in devices with electron- and hole-accepting layers, helps to understand their charge photogeneration and recombination mechanism and unravels their potential for other optoelectronic applications. We report surprisingly high photoluminescence (PL) quantum efficiencies, up to 70%, in these solution-processed crystalline films. We find that photoexcitation in the pristine CH3NH3PbI3-xClx perovskite results in free charge carrier formation within 1 ps and that these free charge carriers undergo bimolecular recombination on time scales of 10s to 100s of ns. To exemplify the high luminescence yield of the CH3NH3PbI3-xClx perovskite, we construct and demonstrate the operation of an optically pumped vertical cavity laser comprising a layer of perovskite between a dielectric mirror and evaporated gold top mirrors. These long carrier lifetimes together with exceptionally high luminescence yield are unprecedented in such simply prepared inorganic semiconductors, and we note that these properties are ideally suited for photovoltaic diode operation. PMID:26269988

  12. Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

    SciTech Connect

    Mario Agio

    2002-12-31

    This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

  13. Electrically and optically detected spin echo of hopping carriers in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Mkhitaryan, Vagharsh; Dobrovitski, Viatcheslav

    We develop a theory for electrically and optically detected primary (2-pulse) and stimulated (3-pulse) spin echo produced by the polaron pairs coupled to the nuclear spins in organic semiconductors. The theory employs fully quantum description of the nuclear and polaron spins, and explains how the structure of the echo signal (electron spin echo envelope modulation, ESEEM) depends on the statistics and rate of the polaron hopping. For the primary spin echo the envelope modulation is strong for slow hopping; both modulation amplitude and dephasing time T2 decrease with increasing hopping rate. As the hopping rate increases further, T2 starts to increase again due to motional narrowing, while the primary echo signal becomes exponential without modulation. The stimulated spin echo signal also shows strong envelope modulation for slow polaron hopping. For faster hopping the stimulated echo (unlike the primary echo) shows a modulation which does not disappear for fast hopping, and has the frequency of the nuclear Larmor precession. Besides describing the recent spin echo measurements in π-conjugated polymers, our work provides a way to directly determine the polaron hopping dynamics from the spin echo experiments. This work was supported by the Department of Energy-Basic Energy Sciences under Contract No. DE-AC02-07CH11358.

  14. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    SciTech Connect

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.

    2010-07-15

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  15. Nano-photonics in III-V semiconductors for integrated quantum optical circuits

    NASA Astrophysics Data System (ADS)

    Wasley, Nicholas Andrew

    This thesis describes the optical spectroscopic measurements of III-V semiconductors used to investigate a number of issues related to the development of integrated quantum optical circuits. The disorder-limited propagation of photons in photonic crystal waveguides in the slow-light regime is investigated. The analysis of Fabry-Perot resonances is used to map the mode dispersion and extract the photon localisation length. Andersonlocalised modes are observed at high group indices, when the localisation lengths are shorter than the waveguide lengths, consistent with the Fabry-Perot analysis. A spin-photon interface based on two orthogonal waveguides is introduced, where the polarisation emitted by a quantum dot is mapped to a path-encoded photon. Operation is demonstrated by deducing the spin using the interference of in-plane photons. A second device directly maps right and left circular polarisations to anti-parallel waveguides, surprising for a non-chiral structure but consistent with an off-centre dot. Two dimensional photonic crystal cavities in GaInP and full control over the spontaneous emission rate of InP quantum dots is demonstrated by spectrally tuning the exciton emission energy into resonance with the fundamental cavity mode. Fourier transform spectroscopy is used to investigate the short coherence times of InP quantum dots in GaInP photonic crystal cavities. Additional technological developments are also presented including a quantum dot registration technique, electrical tuning of quantum dot emission and uniaxial strain tuning of H1 cavity modes.

  16. Self-organized optical device driven by motor proteins

    PubMed Central

    Aoyama, Susumu; Shimoike, Masahiko; Hiratsuka, Yuichi

    2013-01-01

    Protein molecules produce diverse functions according to their combination and arrangement as is evident in a living cell. Therefore, they have a great potential for application in future devices. However, it is currently very difficult to construct systems in which a large number of different protein molecules work cooperatively. As an approach to this challenge, we arranged protein molecules in artificial microstructures and assembled an optical device inspired by a molecular system of a fish melanophore. We prepared arrays of cell-like microchambers, each of which contained a scaffold of microtubule seeds at the center. By polymerizing tubulin from the fixed microtubule seeds, we obtained radially arranged microtubules in the chambers. We subsequently prepared pigment granules associated with dynein motors and attached them to the radial microtubule arrays, which made a melanophore-like system. When ATP was added to the system, the color patterns of the chamber successfully changed, due to active transportation of pigments. Furthermore, as an application of the system, image formation on the array of the optical units was performed. This study demonstrates that a properly designed microstructure facilitates arrangement and self-organization of molecules and enables assembly of functional molecular systems. PMID:24065817

  17. Self-organized optical device driven by motor proteins.

    PubMed

    Aoyama, Susumu; Shimoike, Masahiko; Hiratsuka, Yuichi

    2013-10-01

    Protein molecules produce diverse functions according to their combination and arrangement as is evident in a living cell. Therefore, they have a great potential for application in future devices. However, it is currently very difficult to construct systems in which a large number of different protein molecules work cooperatively. As an approach to this challenge, we arranged protein molecules in artificial microstructures and assembled an optical device inspired by a molecular system of a fish melanophore. We prepared arrays of cell-like microchambers, each of which contained a scaffold of microtubule seeds at the center. By polymerizing tubulin from the fixed microtubule seeds, we obtained radially arranged microtubules in the chambers. We subsequently prepared pigment granules associated with dynein motors and attached them to the radial microtubule arrays, which made a melanophore-like system. When ATP was added to the system, the color patterns of the chamber successfully changed, due to active transportation of pigments. Furthermore, as an application of the system, image formation on the array of the optical units was performed. This study demonstrates that a properly designed microstructure facilitates arrangement and self-organization of molecules and enables assembly of functional molecular systems. PMID:24065817

  18. Measurement of carrier envelope offset frequency for a 10 GHz etalon-stabilized semiconductor optical frequency comb

    NASA Astrophysics Data System (ADS)

    Akbulut, M.; Davila-Rodriguez, J.; Ozdur, I.; Quinlan, F.; Ozharar, S.; Hoghooghi, N.; Delfyett, P. J.

    2011-08-01

    We report Carrier Envelope Offset (CEO) frequency measurements of a 10 GHz harmonically mode-locked, Fabry-Perot etalon-stabilized, semiconductor optical frequency comb source. A modified multi-heterodyne mixing technique with a reference frequency comb was utilized for the measurement. Also, preliminary results from an attempt at f-2f self-referencing measurement are presented. The CEO frequency was found to be ~1.47 GHz for the particular etalon that was used.

  19. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  20. An opto-mechanical coupled-ring reflector driven by optical force for lasing wavelength control

    NASA Astrophysics Data System (ADS)

    Ren, M.; Cai, H.; Chin, L. K.; Huang, J. G.; Gu, Y. D.; Radhakrishnan, K.; Ser, W.; Liu, A. Q.

    2016-02-01

    In this paper, an opto-mechanical coupled-ring reflector driven by optical gradient force is applied in an external-cavity tunable laser. A pair of mutually coupled ring resonators with a free-standing arc serves as a movable reflector. It obtains a 13.3-nm wavelength tuning range based on an opto-mechanical lasing-wavelength tuning coefficient of 127 GHz/nm. The potential applications include optical network, on-chip optical trapping, sensing, and biology detection.

  1. Optical position feedback for electrostatically driven MOEMS scanners

    NASA Astrophysics Data System (ADS)

    Tortschanoff, A.; Baumgart, M.; Frank, A.; Wildenhain, M.; Sandner, T.; Schenk, H.; Kenda, A.

    2012-03-01

    For MOEMS devices which do not have intrinsic on-chip feedback, position information can be provided with optical methods, most simply by using a reflection from the backside of a MOEMS scanner. Measurement of timing signals using fast differential photodiodes can be used for resonant scanner mirrors performing sinusoidal motion with large amplitude. While this approach provides excellent accuracy it cannot be directly extended to arbitrary trajectories or static deflection angles. Another approach is based on the measurement of the position of the reflected laser beam with a quadrant diode. In this work, we present position sensing devices based on either principle and compare both approaches showing first experimental results from the implemented devices

  2. A Modular, IGBT Driven, Ignitron Switched, Optically Controlled Power Supply

    NASA Astrophysics Data System (ADS)

    Carroll, Evan; von der Linden, Jens; You, Setthivoine

    2013-10-01

    An experiment to investigate the dynamics of canonical flux tubes at the University of Washington uses two high energy pulsed power supplies to generate and sustain the plasma discharge. A modular 240 μF , 12 kV DC capacitor based power supply, discharged by ignitron, has been developed specifically for this application. Design considerations include minimizing inductance, rapid switching, fast rise times, and electrically isolated control. An optically coupled front panel and fast IGBT ignitron drive circuit, sequenced manually or by software, control the charge and discharge of the power supply. A complete, sequenced charge/discharge has been successfully tested with a dummy load, producing a peak current of 100 kA and a rise time of 25 μs . This work was sponsored in part by the US DOE Grant DE-SC0010340.

  3. Optical-parametric-oscillator solitons driven by the third harmonic.

    PubMed

    Lutsky, Vitaly; Malomed, Boris A

    2004-12-01

    We introduce a model of a lossy second-harmonic-generating (chi(2)) cavity externally pumped at the third harmonic, which gives rise to driving terms of a new type, corresponding to a cross-parametric gain. The equation for the fundamental-frequency (FF) wave may also contain a quadratic self-driving term, which is generated by the cubic nonlinearity of the medium. Unlike previously studied phase-matched models of chi(2) cavities driven at the second harmonic or at FF, the present one admits an exact analytical solution for the soliton, at a special value of the gain parameter. Two families of solitons are found in a numerical form, and their stability area is identified through numerical computation of the perturbation eigenvalues (stability of the zero solution, which is a necessary condition for the soliton's stability, is investigated in an analytical form). One family is a continuation of the special analytical solution. At given values of the parameters, one soliton is stable and the other one is not; they swap their stability at a critical value of the mismatch parameter. The stability of the solitons is also verified in direct simulations, which demonstrate that an unstable pulse rearranges itself into a stable one, or into a delocalized state, or decays to zero. A soliton which was given an initial boost C starts to move but quickly comes to a halt, if the boost is smaller than a critical value C(cr) . If C > C(cr) , the boost destroys the soliton (sometimes, through splitting into two secondary pulses). Interactions between initially separated solitons are investigated, too. It is concluded that stable solitons always merge into a single one. In the system with weak loss, it appears in a vibrating form, slowly relaxing to the static shape. With stronger loss, the final soliton emerges in the stationary form. PMID:15697523

  4. Optical-parametric-oscillator solitons driven by the third harmonic

    NASA Astrophysics Data System (ADS)

    Lutsky, Vitaly; Malomed, Boris A.

    2004-12-01

    We introduce a model of a lossy second-harmonic-generating (χ(2)) cavity externally pumped at the third harmonic, which gives rise to driving terms of a new type, corresponding to a cross-parametric gain. The equation for the fundamental-frequency (FF) wave may also contain a quadratic self-driving term, which is generated by the cubic nonlinearity of the medium. Unlike previously studied phase-matched models of χ(2) cavities driven at the second harmonic or at FF, the present one admits an exact analytical solution for the soliton, at a special value of the gain parameter. Two families of solitons are found in a numerical form, and their stability area is identified through numerical computation of the perturbation eigenvalues (stability of the zero solution, which is a necessary condition for the soliton’s stability, is investigated in an analytical form). One family is a continuation of the special analytical solution. At given values of the parameters, one soliton is stable and the other one is not; they swap their stability at a critical value of the mismatch parameter. The stability of the solitons is also verified in direct simulations, which demonstrate that an unstable pulse rearranges itself into a stable one, or into a delocalized state, or decays to zero. A soliton which was given an initial boost C starts to move but quickly comes to a halt, if the boost is smaller than a critical value Ccr . If C>Ccr , the boost destroys the soliton (sometimes, through splitting into two secondary pulses). Interactions between initially separated solitons are investigated, too. It is concluded that stable solitons always merge into a single one. In the system with weak loss, it appears in a vibrating form, slowly relaxing to the static shape. With stronger loss, the final soliton emerges in the stationary form.

  5. A photo-driven dual-frequency addressable optical device of banana-shaped molecules

    SciTech Connect

    Krishna Prasad, S. Lakshmi Madhuri, P.; Hiremath, Uma S.; Yelamaggad, C. V.

    2014-03-17

    We propose a photonic switch employing a blend of host banana-shaped liquid crystalline molecules and guest photoisomerizable calamitic molecules. The material exhibits a change in the sign of the dielectric anisotropy switching from positive to negative, at a certain crossover frequency of the probing field. The consequent change in electric torque can be used to alter the orientation of the molecules between surface-determined and field-driven optical states resulting in a large change in the optical transmission characteristics. Here, we demonstrate the realization of this feature by an unpolarized UV beam, the first of its kind for banana-shaped molecules. The underlying principle of photoisomerization eliminates the need for a second driving frequency. The device also acts as a reversible conductance switch with an order of magnitude increase of conductivity brought about by light. Possible usage of this for optically driven display devices and image storage applications is suggested.

  6. Preliminary study of lever-based optical driven micro-actuator

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Lang; Li, Yi-Hsiung; Lin, Chin-Te; Chiang, Chia-Chin; Liu, Yi-Jui; Chung, Tien-Tung; Baldeck, Patrice L.

    2012-04-01

    This study presents a novel type of optically driven lever-based micro-actuator fabricated using two-photon polymerization 3D-microfabrication technique. The lever is composed of a beam, an arch, and a sphere. First, optical tweezers is applied on the spheres to demonstrate the actuation of the lever. A spring is jointed at the lever for verifying the induced forces. Under the dragging by laser focusing, the lever simultaneously turns and results a torque like a mechanical arm. Then, the demonstration of a photo-driven micro-transducer with a mechanical arm and a gear is preformed. The experimental result indicates that our design enables precise manipulation of the mirco-actuator by optical tweezers at micron scale. This study provides a possibility for driving micron-sized structured mechanisms, such as connecting rods, valves. It is expected to contribute on the investigation of "Lab-on-a-chip".

  7. Preliminary study of lever-based optical driven micro-actuator

    NASA Astrophysics Data System (ADS)

    Lin, Chih-Lang; Li, Yi-Hsiung; Lin, Chin-Te; Chiang, Chia-Chin; Liu, Yi-Jui; Chung, Tien-Tung; Baldeck, Patrice L.

    2011-11-01

    This study presents a novel type of optically driven lever-based micro-actuator fabricated using two-photon polymerization 3D-microfabrication technique. The lever is composed of a beam, an arch, and a sphere. First, optical tweezers is applied on the spheres to demonstrate the actuation of the lever. A spring is jointed at the lever for verifying the induced forces. Under the dragging by laser focusing, the lever simultaneously turns and results a torque like a mechanical arm. Then, the demonstration of a photo-driven micro-transducer with a mechanical arm and a gear is preformed. The experimental result indicates that our design enables precise manipulation of the mirco-actuator by optical tweezers at micron scale. This study provides a possibility for driving micron-sized structured mechanisms, such as connecting rods, valves. It is expected to contribute on the investigation of "Lab-on-a-chip".

  8. Modeling of High-Quality Factor XNOR Gate Using Quantum-Dot Semiconductor Optical Amplifiers at 1 Tb/s

    NASA Astrophysics Data System (ADS)

    Kotb, Amer

    2015-06-01

    The modeling of all-optical logic XNOR gate is realized by a series combination of XOR and INVERT gates. This Boolean function is simulated by using Mach-Zehnder interferometers (MZIs) utilizing quantum-dots semiconductor optical amplifiers (QDs-SOAs). The study is carried out when the effect of amplified spontaneous emission (ASE) is included. The dependence of the output quality factor ( Q-factor) on signals and QDs-SOAs' parameters is also investigated and discussed. The simulation is conducted under a repetition rate of ˜1 Tb/s.

  9. All-optical frequency downconversion technique utilizing a four-wave mixing effect in a single semiconductor optical amplifier for wavelength division multiplexing radio-over-fiber applications.

    PubMed

    Kim, Hyoung-Jun; Song, Jong-In

    2012-03-26

    An all-optical frequency downconversion utilizing a four-wave mixing effect in a single semiconductor optical amplifier (SOA) was experimentally demonstrated for wavelength division multiplexing (WDM) radio-over-fiber (RoF) applications. Two WDM optical radio frequency (RF) signals having 155 Mbps differential phase shift keying (DPSK) data at 28.5 GHz were simultaneously down-converted to two WDM optical intermediate frequency (IF) signals having an IF frequency of 4.5 GHz by mixing with an optical local oscillator (LO) signal having a LO frequency of 24 GHz in the SOA. The bit-error-rate (BER) performance of the RoF up-links with different optical fiber lengths employing all-optical frequency downconversion was investigated. The receiver sensitivity of the RoF up-link with a 6 km single mode fiber and an optical IF signal in an optical double-sideband format was approximately -8.5 dBm and the power penalty for simultaneous frequency downconversion was approximately 0.63 dB. The BER performance showed a strong dependence on the fiber length due to the fiber dispersion. The receiver sensitivity of the RoF up-link with the optical IF signal in the optical single-sideband format was reduced to approximately -17.4 dBm and showed negligible dependence on the fiber length. PMID:22453476

  10. A novel approach to all-optical wavelength conversion by utilizing a reflective semiconductor optical amplifier in a co-propagation scheme

    NASA Astrophysics Data System (ADS)

    Guo, L. Q.; Connelly, M. J.

    2008-09-01

    Nonlinear optical gain modulation in an InGaAsP/InP bulk reflective semiconductor optical amplifier (RSOA) is studied. The differences of the optical properties between RSOAs and conventional SOAs are initially investigated. All-optical wavelength conversion based on nonlinear gain modulation in RSOAs is demonstrated at a bit rate of 2.488 Gbit/s. It is shown that a bit-error-rate of <10-9 can be achieved and an extinction ratio of >9 dB can be obtained at a bit rate of 2.488 Gbit/s with a 231-1 non-return-to-zero (NRZ) pseudorandom bit sequence (PRBS). In comparison with conventional SOAs, wavelength conversion by RSOAs shows much improved performances in high-speed all-optical wavelength conversions.

  11. Steady-state propagation of ultrashort optical pulses in semiconductor excitonic medium

    NASA Astrophysics Data System (ADS)

    Talanina, Irina B.

    1996-06-01

    The form-invariant coherent pulse propagation in semiconductors excited at the 1 s -exciton resonance is studied analytically with the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for the electric field is presented. The effects of Coulomb interactions between excitons and spatial dispersion are discussed. Applications to CdS and CdSe crystals are made.

  12. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  13. Photonic microwave stabilization for period-one nonlinear dynamics of semiconductor lasers using optical modulation sideband injection locking.

    PubMed

    Hung, Yu-Han; Hwang, Sheng-Kwang

    2015-03-01

    Photonic microwave generation using period-one nonlinear dynamics of semiconductor lasers suffers from poor spectral purity. A stabilization approach based on optical modulation sideband injection locking is investigated. An optical signal carrying a highly correlated modulation sideband comb simultaneously injection-locks the regeneration of the optical carrier and the lower oscillation sideband in the dynamics, establishing a phase-locking between the two spectral components. A linewidth of below 1 Hz is therefore achieved for microwave generation up to at least 40 GHz. Because of the frequency multiplication in yielding the comb-like optical signal, only an electronic microwave reference at the tenth subharmonic or higher of the generated microwave frequency is required. PMID:25836870

  14. Visible Light Driven Photocatalytic Reactor Based on Micro-structured Polymer Optical Fiber Preform

    NASA Astrophysics Data System (ADS)

    Li, Dong-Dong; She, Jiang-Bo; Wang, Chang-Shun; Peng, Bo

    2014-05-01

    A novel visible light driven photocatalytic reactor with 547 pieces of Ag/AgBr-film-modified capillaries is reported and it is derived from a microstructured polymer optical fiber (MPOF) preform. The MPOF preform not only plays the role of a light-transmitting media, but it is also a Ag/AgBr supporting and waste-water pipe to supply the photocatalytic degradation of dyes solute. The photocatalytic reactor has such a large surface area for Ag/AgBr loading, which is a visible light driven photocatalyst that photodegradation efficiency is enhanced.

  15. Micro optical diffusion sensor using a comb-driven micro Fresnel mirror.

    PubMed

    Matoba, Yoshiaki; Taguchi, Yoshihiro; Nagasaka, Yuji

    2015-01-12

    We have developed a novel micro optical diffusion sensor (MODS) with a newly proposed comb-driven-micro Fresnel mirror (CD-MFM) scanner to detect structural changes in biological samples. By controlling the fringe spacing of the excitation laser beam, we can tune the decay time to obtain quick and precise measurements. In this study, the pre-tilted mirror is rotated by vertical comb-driven actuators; the resulting change in the mirror angle alters the fringe spacing. The validity of the proposed mirror scanner is confirmed in simulations and in an experiment using a fabricated prototype device. PMID:25835693

  16. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    NASA Astrophysics Data System (ADS)

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-01

    Hexagonal boron nitride carbon, h(BN)1-x(C2)x, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration xc to form the homogenous h(BN)1-x(C2)x alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN)1-x(C2)x and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN)1-x(C2)x alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN)1-x(C2)x alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  17. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    SciTech Connect

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-07

    Hexagonal boron nitride carbon, h(BN){sub 1-x}(C{sub 2}){sub x}, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration x{sub c} to form the homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN){sub 1-x}(C{sub 2}){sub x} and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN){sub 1-x}(C{sub 2}){sub x} alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN){sub 1-x}(C{sub 2}){sub x} alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  18. Wavelength-dependent femtosecond pulse amplification in wideband tapered-waveguide quantum well semiconductor optical amplifiers.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2015-12-10

    In this paper, we study the wavelength-dependent amplification in three different wideband quantum well semiconductor optical amplifiers (QWAs) having conventional, exponentially tapered, and linearly tapered active region waveguide structures. A new theoretical model for tapered-waveguide QWAs considering the effect of lateral carrier density distribution and the strain effect in the quantum well is established based on a quantum well transmission line modeling method. The temporal and spectral characteristics of amplified femtosecond pulse are analyzed for each structure. It was found that, for the amplification of a single femtosecond pulse, the tapered-waveguide QWA provides higher saturation gain, and the output spectra of the amplified pulse in all three structures exhibit an apparent redshift and bandwidth narrowing due to the reduction of carrier density; however, the output spectrum in the tapered-waveguide amplifier is less distorted and exhibits smaller bandwidth narrowing. For the simultaneous amplification of two femtosecond pulses with different central frequencies, in all the three structures, two peaks appear in the output spectra while the peak at the frequency closer to the peak frequency of the QWA gain spectrum receives higher amplification due to the frequency (wavelength) dependence of the QWA gain. At a low peak power level of the input pulse, the bandwidth of each window in the tapered structure is larger than that of the conventional waveguide structure, which aggravates the spectrum alias in the amplification of femtosecond pulses with different central frequencies. As the peak powers of the two pulses increase, the spectrum alias in the conventional waveguide becomes more serious while there are small changes in the tapered structures. Also, we have found that in the amplification of a femtosecond pulse train, the linear-tapered QWAs exhibit the fastest gain recovery as compared with the conventional and exponentially tapered QWAs. PMID

  19. Analytical Investigation of an All-Optical T-Type Flip-Flop Using a Semiconductor Optical Amplifier Mach-Zehnder Interferometer with Push-Pull Configuration

    NASA Astrophysics Data System (ADS)

    Shimizu, Satoshi; Uenohara, Hiroyuki

    2011-06-01

    To achieve an optical regenerator for a differential phase-shift keying signal based on a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI), we need an all-optical T-type flip-flop (T-FF) for encoding. We propose an all-optical T-FF consisting of an SOA-MZI with push-pull configuration and a feedback mirror to overcome the speed limitation of the previously proposed counter-faced configuration. Numerical simulation reveals its possibility of stable operation in 10 Gbps with a 27 - 1 pseudo random binary sequence (PRBS) signal even by using a conventional SOA with a slow carrier recovery of 100 ps, and the possibility of 40 Gbps operation is also investigated.

  20. Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

    NASA Astrophysics Data System (ADS)

    Lao, Y. F.; Perera, A. G. U.; Wang, H. L.; Zhao, J. H.; Jin, Y. J.; Zhang, D. H.

    2016-03-01

    Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3-5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ0, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ0 is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ0. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

  1. Development of A Semiconductor Laser Based High Temperature Fine Thermal Energy Source in an Optical Fiber Tip for Clinical Applications

    NASA Astrophysics Data System (ADS)

    Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Yamaguchi, Shigeru

    2013-05-01

    A new technique for generating high temperatures on the surface of an optical fiber is developed for medical applications using lower-power semiconductor lasers with output powers lower than 10 W. Using a power level of 4-6 W semiconductor laser with a pulse duration of 180 ms at a wavelength of 980 nm, a laser-coupled fiber tip was once processed to contain a certain amount of Ti with a depth of 100 µm from the tip surface so that the laser energy could be efficiently absorbed to be transferred to thermal energy. With consecutive laser pulse irradiation, the tip processed fiber (TP fiber) served as a reproducible fine heat source whose temperature was measured to be in excess 3100 K based on two-color thermometry. Processing of ceramic and niobium plate, which are hardly ablated with direct low power (6 W) irradiation, was successfully demonstrated by contacting the TP fiber excited with the same power.

  2. Deformation Measurement of a Driven Pile Using Distributed Fibre-optic Sensing

    NASA Astrophysics Data System (ADS)

    Monsberger, Christoph; Woschitz, Helmut; Hayden, Martin

    2016-03-01

    New developments in distributed fibre-optic sensing allow the measurement of strain with a very high precision of about 1 µm / m and a spatial resolution of 10 millimetres or even better. Thus, novel applications in several scientific fields may be realised, e. g. in structural monitoring or soil and rock mechanics. Especially due to the embedding capability of fibre-optic sensors, fibre-optic systems provide a valuable extension to classical geodetic measurement methods, which are limited to the surface in most cases. In this paper, we report about the application of an optical backscatter reflectometer for deformation measurements along a driven pile. In general, pile systems are used in civil engineering as an efficient and economic foundation of buildings and other structures. Especially the length of the piles is crucial for the final loading capacity. For optimization purposes, the interaction between the driven pile and the subsurface material is investigated using pile testing methods. In a field trial, we used a distributed fibre-optic sensing system for measuring the strain below the surface of an excavation pit in order to derive completely new information. Prior to the field trial, the fibre-optic sensor was investigated in the laboratory. In addition to the results of these lab studies, we briefly describe the critical process of field installation and show the most significant results from the field trial, where the pile was artificially loaded up to 800 kN. As far as we know, this is the first time that the strain is monitored along a driven pile with such a high spatial resolution.

  3. Atmospheric-pressure microplasma in dielectrophoresis-driven bubbles for optical emission spectroscopy.

    PubMed

    Fan, Shih-Kang; Shen, Yan-Ting; Tsai, Ling-Pin; Hsu, Cheng-Che; Ko, Fu-Hsiang; Cheng, Yu-Ting

    2012-10-01

    The manipulation of bubbles and the ignition of microplasma within a 200 nL bubble at atmospheric pressure and in an inert silicone oil environment were achieved. Driven by dielectrophoresis (DEP), bubble generation, transportation, mixing, splitting, and expelling were demonstrated. This process facilitated the preparation of various bubbles with tuneable gas compositions. Different gas bubbles, including air, argon (Ar), helium (He), and Ar/He mixtures, were manipulated and ignited to the plasma state by dielectric barrier discharge (DBD) within a 50 μm-high gap between parallel plates. Moving and splitting the atmospheric-pressure microplasma in different gas bubbles were achieved by DEP. The excited light of the microplasma was recorded by an optical spectrometer for the optical emission spectroscopy (OES) analyses. The characteristic peaks of air, Ar, and He were observed in the DEP-driven microplasma. With the capability to manipulate bubbles and microplasma, this platform could be used for gas analyses in the future. PMID:22878730

  4. Femtosecond electron injection from optically populated donor states into the conduction band of semiconductors

    NASA Astrophysics Data System (ADS)

    Ernstorfer, Ralph; Toeben, Lars; Gundlach, Lars; Felber, Silke; Galoppini, Elena; Wei, Qian; Eichberger, Rainer; Storck, Winfried; Zimmermann, Carsten; Willig, Frank

    2003-12-01

    Unoccupied donor states can be populated via light absorption at the surface of semiconductor in the range of the conduction band levels. Hot electrons are injected from such donor states into the conduction band of a semiconductor on a femtosecond time scale. Such donor states can have rather different physical properties, e.g. unoccupied surface bands formed via reconstruction of the clean surface of a semiconductor in contact with ultra high vacuum or chromophores in molecules that are anchored at the surface of the semiconductor. The energy levels of the donor states with respect to the bands in the semiconductor can be determined with UPS and fs-2PPE. Experimental data on the energetics and dynamics of electron injection are presented for the two different cases of donor states mentioned above. The influence of vibrational wavepackets on electron injection is discussed for the case of a molecular donor state. Energy loss of the hot electrons injected into the semiconductor is measured with energy and time resolution employing femtosecond two-photon-photoemission.

  5. Measurement of an Explosively Driven Hemispherical Shell Using 96 Points of Optical Velocimetry

    SciTech Connect

    Danielson, J. R.; Daykin, E P; Diaz, A. B.; Doty, D. L.; Frogget, B. C.; Furlanetto, M. R.; Gallegos, C. H.; Gibo, M; Garza, A; Holtkamp, D B; Hutchins, M S; Perez, C; Perez, C; Pena, M; Romero, V T; Shinas, M A; Teel, M G; Tabaka, L J

    2014-04-01

    We report the measurement of the surface motion of a hemispherical copper shell driven by high explosives. This measurement was made using three 32-channel multiplexed photonic Doppler velocimetry (PDV) systems, in combination with a novel compound optical probe. Clearly visible are detailed features of the motion of the shell over time, enhanced by spatial correlation. Significant non-normal motion is apparent, and challenges in measuring such a geometry are discussed.

  6. Experimental investigations on nonlinear dynamics of a semiconductor laser subject to optical injection and fiber Bragg grating feedback

    NASA Astrophysics Data System (ADS)

    Song, Jian; Zhong, Zhu-Qiang; Wei, Li-Xia; Wu, Zheng-Mao; Xia, Guang-Qiong

    2015-11-01

    Nonlinear dynamical characteristics of a slave semiconductor laser (S-SL) subject to optical injection from a master SL (M-SL) and optical feedback from a fiber Bragg grating (FBG) are investigated experimentally. First, we investigate the nonlinear dynamics of the S-SL subject to only optical injection. Through varying the injection coefficient and fixing the frequency detuning between the M-SL and S-SL, some dynamical states with typical characteristics are recorded and identified. Next, the variations of these dynamical states are further investigated with the introduction of a FBG feedback, and the according results show that these dynamical states may be changed after a FBG feedback is introduced into the S-SL. Finally, after collecting the mappings of the dynamical states of S-SL in the parameter space of injection coefficient and frequency detuning under different FBG feedback coefficients, the influences of FBG feedback on the nonlinear dynamics of the S-SL are analyzed.

  7. Tunable and switchable multi-wavelength fiber laser based on semiconductor optical amplifier and twin-core photonic crystal fiber

    NASA Astrophysics Data System (ADS)

    Kim, Bongkyun; Han, Jihee; Chung, Youngjoo

    2012-02-01

    Multi-wavelength fiber lasers have attracted a lot of interest, recently, because of their potential applications in wavelength-division-multiplexing (WDM) systems, optical fiber sensing, and fiber-optics instruments, due to their numerous advantages such as multiple wavelength operation, low cost, and compatibility with the fiber optic systems. Semiconductor optical amplifier (SOA)-based multi-wavelength fiber lasers exhibit stable operation because of the SOA has the property of primarily inhomogeneous broadening and thus can support simultaneous oscillation of multiple lasing wavelengths. In this letter, we propose and experimentally demonstrate a switchable multi-wavelength fiber laser employing a semiconductor optical amplifier and twin-core photonic crystal fiber (TC-PCF) based in-line interferometer comb filter. The fabricated two cores are not symmetric due to the associated fiber fabrication process such as nonuniform heat gradient in furnace and asymmetric microstructure expansion during the gas pressurization which results in different silica strut thickness and core size. The induced asymmetry between two cores considerably alters the linear power transfer, by seriously reducing it. These nominal twin cores form effective two optical paths and associated effective refractive index difference. The in-fiber comb filter is effectively constructed by splicing a section of TC-PCF between two single mode fibers (SMFs). The proposed laser can be designed to operate in stable multi-wavelength lasing states by adjusting the states of the polarization controller (PC). The lasing modes are switched by varying the state of PC and the change is reversible. In addition, we demonstrate a tunable multi-wavelength fiber laser operation by applying temperature changes to TC-PCF in the multi-channel filter.

  8. An Optocatalytic Model for Semiconductor-Catalyst Water-Splitting Photoelectrodes Based on In Situ Optical Measurements on Operational Catalysts.

    PubMed

    Trotochaud, Lena; Mills, Thomas J; Boettcher, Shannon W

    2013-03-21

    The optical properties of electrocatalysts are important for photoelectrochemical water splitting because colored catalysts on the surface of semiconductor photoelectrodes parasitically absorb photons and lower the system efficiency. We present a model that describes the coupling of colored oxygen evolution reaction (OER) electrocatalyst thin films with semiconductor photoelectrodes. We use this model to define an "optocatalytic" efficiency (Φo-c) based on experimental optical and electrokinetic data collected in basic solution. Because transition-metal oxides, hydroxides, and oxyhydroxides often exhibit electrochromism, in situ spectroelectrochemistry is used to quantify the optical absorption of active NiOx, CoOx, NiCoOx, Ni0.9Fe0.1Ox, and IrOx catalyst films at OER potentials. For the highest-activity Ni0.9Fe0.1Ox catalyst, Φo-c is maximized (0.64) for a thickness of ∼0.4 nm (∼2 monolayers). This work quantitatively shows that ultrathin catalyst films are appropriate to optimize the performance of water-splitting photoelectrodes and thus assists in the design and study of efficient photoelectrochemical water-splitting devices. PMID:26291358

  9. Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Zuleta, J. N.; Reyes-Gómez, E.

    2016-05-01

    The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor superlattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices.

  10. Electric-Field-Driven Dual Vacancies Evolution in Ultrathin Nanosheets Realizing Reversible Semiconductor to Half-Metal Transition.

    PubMed

    Lyu, Mengjie; Liu, Youwen; Zhi, Yuduo; Xiao, Chong; Gu, Bingchuan; Hua, Xuemin; Fan, Shaojuan; Lin, Yue; Bai, Wei; Tong, Wei; Zou, Youming; Pan, Bicai; Ye, Bangjiao; Xie, Yi

    2015-12-01

    Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/-1.5 V, the corresponding electric field is around 20,000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 10(3) times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics. PMID:26535800

  11. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    SciTech Connect

    Chen, Ying

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  12. Semiconductor and noble metal surface process characterization using electrochemical and optical methods

    NASA Astrophysics Data System (ADS)

    Srinivasan, Ramanathan

    Surface electrochemical processes are of importance in semiconductor manufacturing and electrochemical deposition. In this work, surface processes of noble metals are investigated by electrochemical and optical methods and the interpretations of the results are discussed. The specific adsorption of thiosulfate ions on polycrystalline silver electrode was studied by differential capacitance measurements using impedance analysis and the adsorption isotherm was found to be best explained by image dipole formation. The apparant dipole strength was determined to be 0.72 D. The determination of kinetics of galvanic deposition of gold on to silicon (111) was studied mainly by surface second harmonic generation (SHG). The results of SHG experiments along with atomic force microscopy (AFM) images indicate formation of clusters on the surface of silicon. The surface plasmon resonance of gold clusters causes strong enhancement of SHG and later, the growth of the clusters cause the drop in signal. By adding KF and HCl, the equilibria of HF dissociation were suitably altered and it was found that HF and not HF2- is the kinetically active species. Rutherford backscattering (RBS) measurements indicate that Au deposition is rate-limited by diffusion, while the SHG measurements indicate that Au cluster growth is rate-limited by either a surface reaction involving a fluoride-containing species or electron transfer. The reaction order for Au cluster growth with respect to HF is approximately ½, and the reaction order for Au cluster growth with respect to Au(CN)2- is near zero in the concentration range 10-4--10-5 M. The development and characteristics of a stable, high plating rate bath for electroless deposition of silver from silver cyanide and alkaline formaldehyde is described in the third chapter. Cyclic voltammograms indicate that the silver is passivated by cyanide ions which decrease the rate of silver reduction and hence the plating rate. Stirring the solution decreases the

  13. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  14. Efficient Light-driven Long Distance Charge Separation and H2 Generation in Semiconductor Quantum Rods and Nanoplatelets

    NASA Astrophysics Data System (ADS)

    Lian, Tianquan

    Quantum confined semiconductor nanocrystals (0D quantum dots, 1D quantum rods and 2D quantum platlets) have been intensively investigated as light harvesting and charge separation materials for photovoltaic and photocatalytic applications. The efficiency of these semiconductor nanocrystal-based devices depends on many fundamental processes, including light harvesting, carrier relaxation, exciton localization and transport, charge separation and charge recombination. The competition between these processes determines the overall solar energy conversion (solar to electricity or fuel) efficiency. Semiconductor nano-heterostructures, combining two or more material components, offer unique opportunities to control their charge separation properties by tailoring their compositions, dimensions and spatial arrangement. Further integration of catalysts (heterogeneous or homogeneous) to these materials form multifunctional nano-heterostructures. Using 0D, 1D and 2D CdSe/CdS/Pt heterostructures as model systems, we directly probe the above-mentioned fundamental exciton and carrier processes by transient absorption and time-resolved fluorescence spectroscopy. We are examining how to control these fundamental processes through the design of heterostructures to achieve long-lived charge separation and efficient H2 generation. In this talk, we will discuss a new model for exciton dissociation by charge transfer in quantum dots (i.e. Auger assisted electron transfer), mechanism of 1D and 2D exciton transport and dissociation in nanorods, and key factors limiting H2 generation efficiency in CdSe/CdS/Pt nanorod heterostructures.

  15. Nano-stepper-driven optical shutter for applications in free-space micro-optics

    NASA Astrophysics Data System (ADS)

    Zawadzka, Justyna; Li, Lijie; Unamuno, Anartz; Uttamchandani, Deepak G.

    2002-09-01

    In this paper we report a simple design of a micro-optical shutter/attenuator. The standard MUMPS process was used to fabricate the device. A vertically erected, gold-coated, 200x300 mm side length micro-mirror was precisely placed between the end faces of two closely spaced optical fibers. The position of the micro-mirror with respect to the optical fiber end face was controlled by a nano-stepping motor array. Optical and mechanical tests were performed on the device. A 1.55 mm laser beam was sent along the optical fiber. When the micro-mirror was removed from the front of the fiber, the coupling efficiency between two fibers was -10 dBm. Once the micro-mirror was placed in the optical path the coupling efficiency dropped to -51.5 dBm. The best attenuation was obtained when the micro-mirror blocked the whole cross-section of the laser beam diameter. It is evident that the device can operate as a high precision fiber optic attenuator or shutter.

  16. Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors

    SciTech Connect

    Golovan, L. A.; Zabotnov, S. V. Timoshenko, V. Yu.; Kashkarov, P. K.

    2009-02-15

    The effective-medium model has been generalized within the dipole approximation, with allowance for the shape anisotropy and dynamic depolarization of semiconductor nanoparticles. The calculations revealed nonmonotonic dependences for the birefringence and dichroism on the nanoparticle size. Comparison of the measured and calculated refractive index dispersion of birefringent porous silicon layers in the near-IR region indicates that consideration for the dynamic depolarization gives a better description of the optical properties for this material in comparison with the generally used effective-medium electrostatic approximation.

  17. Linear and nonlinear optical properties of semiconductor nanorings with magnetic field and disorder - Influence on excitons and biexcitons

    NASA Astrophysics Data System (ADS)

    Meier, T.; Thomas, P.; Koch, S. W.

    2001-07-01

    Linear and nonlinear optical absorption spectra are studied theoretically for semiconductor nanorings penetrated by a magnetic field. Due to the Aharanov-Bohm effect the spectral position as well as the oscillator strength of the exciton change periodically as function of the magnetic flux enclosed by the ring. In the nonlinear differential absorption spectra it is found that the magnetic field strongly modifies Coulomb many-body correlations. In particular, the magnetic-field-induced increase of the exciton binding energy is accompanied by a decrease of the biexciton binding energy. The persistence of these effects in the presence of energetic disorder is analyzed.

  18. Direct measurement of lattice dynamics and optical phonon excitation in semiconductor nanocrystals using femtosecond stimulated Raman spectroscopy.

    PubMed

    Hannah, Daniel C; Brown, Kristen E; Young, Ryan M; Wasielewski, Michael R; Schatz, George C; Co, Dick T; Schaller, Richard D

    2013-09-01

    We report femtosecond stimulated Raman spectroscopy measurements of lattice dynamics in semiconductor nanocrystals and characterize longitudinal optical (LO) phonon production during confinement-enhanced, ultrafast intraband relaxation. Stimulated Raman signals from unexcited CdSe nanocrystals produce a spectral shape similar to spontaneous Raman signals. Upon photoexcitation, stimulated Raman amplitude decreases owing to experimentally resolved ultrafast phonon generation rates within the lattice. We find a ∼600  fs, particle-size-independent depletion time attributed to hole cooling, evidence of LO-to-acoustic down-conversion, and LO phonon mode softening. PMID:25166708

  19. Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

    DOE PAGESBeta

    Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; Keiffer, Patrick; Sears, Jasmine; Khitrova, Galina

    2016-02-01

    Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

  20. An all-optical frequency up-converter utilizing four-wave mixing in a semiconductor optical amplifier for sub-carrier multiplexed radio-over-fiber applications.

    PubMed

    Kim, Hyoung-Jun; Song, Jong-In; Song, Ho-Jin

    2007-03-19

    A novel all-optical frequency up-converter utilizing four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) was proposed and experimentally demonstrated. The frequency up-converter converted an optical intermediate frequency (IF) signal (f(IF) = 2.5 GHz) to an optical radio frequency (RF) signal (f(RF) = 35 and 40 GHz) through mixing with an optical local oscillator (LO) signal (f(LO) = 37.5 GHz). The up-converter showed positive conversion efficiency of 5.77 dB for the optical IF power of -22 dBm and the optical LO power of -13 dBm. This scheme showed broad bandwidths with respect to both LO and IF frequencies. The up-converter showed a phase noise of -84.5 dBc/Hz for the LO frequency of 37.5 GHz (f(LO)) and the offset frequency of 10 kHz after the frequency up-conversion. PMID:19532579

  1. Optically controlled dense current structures driven by relativistic plasma aperture-induced diffraction

    NASA Astrophysics Data System (ADS)

    Gonzalez-Izquierdo, Bruno; Gray, Ross J.; King, Martin; Dance, Rachel J.; Wilson, Robbie; McCreadie, John; Butler, Nicholas M. H.; Capdessus, Remi; Hawkes, Steve; Green, James S.; Borghesi, Marco; Neely, David; McKenna, Paul

    2016-05-01

    The collective response of charged particles to intense fields is intrinsic to plasma accelerators and radiation sources, relativistic optics and many astrophysical phenomena. Here we show that a relativistic plasma aperture is generated in thin foils by intense laser light, resulting in the fundamental optical process of diffraction. The plasma electrons collectively respond to the resulting laser near-field diffraction pattern, producing a beam of energetic electrons with a spatial structure that can be controlled by variation of the laser pulse parameters. It is shown that static electron-beam and induced-magnetic-field structures can be made to rotate at fixed or variable angular frequencies depending on the degree of ellipticity in the laser polarization. The concept is demonstrated numerically and verified experimentally, and is an important step towards optical control of charged particle dynamics in laser-driven dense plasma sources.

  2. Dynamic Simulation of Trapping and Controlled Rotation of a Microscale Rod Driven by Line Optical Tweezers

    NASA Astrophysics Data System (ADS)

    Haghshenas-Jaryani, Mahdi; Bowling, Alan; Mohanty, Samarendra

    2013-03-01

    Since the invention of optical tweezers, several biological and engineering applications, especially in micro-nanofluid, have been developed. For example, development of optically driven micromotors, which has an important role in microfluidic applications, has vastly been considered. Despite extensive experimental studies in this field, there is a lack of theoretical work that can verify and analyze these observations. This work develops a dynamic model to simulate trapping and controlled rotation of a microscale rod under influence of the optical trapping forces. The laser beam, used in line optical tweezers with a varying trap's length, was modeled based on a ray-optics approach. Herein, the effects of viscosity of the surrounding fluid (water), gravity, and buoyancy were included in the proposed model. The predicted results are in overall agreement with the experimental observation, which make the theoretical model be a viable tool for investigating the dynamic behavior of small size objects manipulated by optical tweezers in fluid environments. This material is based upon work supported by the National Science Foundation under Grant No. MCB-1148541.

  3. Performance of single semiconductor optical amplifier-based ultrafast nonlinear interferometer with clock-control signals timing deviation in dual rail-switching mode

    NASA Astrophysics Data System (ADS)

    Siarkos, Thanassis; Zoiros, Kyriakos E.

    2009-08-01

    The performance of a single semiconductor optical amplifier (SOA)-based ultrafast nonlinear interferometer that is simultaneously driven by two ultrafast data streams with respect to the timing deviation between these signals and the standard clock input is theoretically studied and investigated. For this purpose, a numerical model is applied to simulate the operation of the specific module in pattern-operated dual rail-switching mode and under the presence of such imperfect synchronization. The thorough analysis and interpretation of the obtained results allows one to evaluate the impact of this temporal offset on the achievement of both bitwise logical correctness and high quality at the output. In this manner, the conditions that it must necessarily fulfill are derived and the dependence of its permissible margin and accordingly the way the latter can be extended is revealed, while its optimal amount for maximizing the defined metric is quantified by the difference between the orthogonal polarization clock components' relative walk-off and the control pulse width. These findings can help compensate for the existence of this effect as well as strengthen the tolerance against it so that it can be properly handled in the context of the considered type of SOA-based interferometric switch.

  4. 25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Zeghuzi, A. Schmeckebier, H.; Stubenrauch, M.; Bimberg, D.; Meuer, C.; Schubert, C.; Bunge, C.-A.

    2015-05-25

    Error-free generation of 25-Gbit/s differential phase-shift keying (DPSK) signals via direct modulation of InAs quantum-dot (QD) based semiconductor optical amplifiers (SOAs) is experimentally demonstrated with an input power level of −5 dBm. The QD SOAs emit in the 1.3-μm wavelength range and provide a small-signal fiber-to-fiber gain of 8 dB. Furthermore, error-free DPSK modulation is achieved for constant optical input power levels from 3 dBm down to only −11 dBm for a bit rate of 20 Gbit/s. Direct phase modulation of QD SOAs via current changes is thus demonstrated to be much faster than direct gain modulation.

  5. Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

    SciTech Connect

    Karni, O. Mikhelashvili, V.; Eisenstein, G.; Kuchar, K. J.; Capua, A.; Sęk, G.; Misiewicz, J.; Ivanov, V.; Reithmaier, J. P.

    2014-03-24

    We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

  6. NONLINEAR OPTICAL PHENOMENA: Self-reflection effect in semiconductors in a two-pulse regime

    NASA Astrophysics Data System (ADS)

    Khadzhi, P. I.; Nad'kin, L. Yu

    2004-12-01

    Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.

  7. Nonequilibrium optical properties in semiconductors from first principles: A combined theoretical and experimental study of bulk silicon

    NASA Astrophysics Data System (ADS)

    Sangalli, Davide; Dal Conte, Stefano; Manzoni, Cristian; Cerullo, Giulio; Marini, Andrea

    2016-05-01

    The calculation of the equilibrium optical properties of bulk silicon by using the Bethe-Salpeter equation solved in the Kohn-Sham basis represents a cornerstone in the development of an ab-initio approach to the optical and electronic properties of materials. Nevertheless, calculations of the transient optical spectrum using the same efficient and successful scheme are scarce. We report, here, a joint theoretical and experimental study of the transient reflectivity spectrum of bulk silicon. Femtosecond transient reflectivity is compared to a parameter-free calculation based on the nonequilibrium Bethe-Salpeter equation. By providing an accurate description of the experimental results we disclose the different phenomena that determine the transient optical response of a semiconductor. We give a parameter-free interpretation of concepts such as bleaching, photoinduced absorption, and stimulated emission, beyond the Fermi golden rule. We also introduce the concept of optical gap renormalization, as a generalization of the known mechanism of band gap renormalization. The present scheme successfully describes the case of bulk silicon, showing its universality and accuracy.

  8. GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

    PubMed

    Chaqmaqchee, Faten Adel Ismail; Mazzucato, Simone; Oduncuoglu, Murat; Balkan, Naci; Sun, Yun; Gunes, Mustafa; Hugues, Maxime; Hopkinson, Mark

    2011-01-01

    Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained. PMID:21711630

  9. GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

    PubMed Central

    2011-01-01

    Hot electron light emission and lasing in semiconductor heterostructure (Hellish) devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or, as in this study, as a vertical cavity semiconductor optical amplifier (VCSOA). This study investigates the prospects for a Hellish VCSOA based on GaInNAs/GaAs material for operation in the 1.3-μm wavelength range. Hellish VCSOAs have increased functionality, and use undoped distributed Bragg reflectors; and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure, where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of Ga0.35In0.65N0.02As0.08/GaAs quantum wells (QWs) in the active region. It was characterised through I-V, L-V and by spectral photoluminescence, electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained. PMID:21711630

  10. Narrow linewidth broadband tunable semiconductor laser at 840 nm with dual acousto-optic tunable configuration for OCT applications

    NASA Astrophysics Data System (ADS)

    Chamorovskiy, Alexander; Shramenko, Mikhail V.; Lobintsov, Andrei A.; Yakubovich, Sergei D.

    2016-03-01

    We demonstrate a tunable narrow linewidth semiconductor laser for the 840 nm spectral range. The laser has a linear cavity comprised of polarization maintaining (PM) fiber. A broadband semiconductor optical amplifier (SOA) in in-line fiber-coupled configuration acts as a gain element. It is based on InGaAs quantum-well (QW) active layer. SOA allows for tuning bandwidth exceeding 25 nm around 840 nm. Small-signal fiber-to-fiber gain of SOA is around 30 dB. A pair of acousto-optic tunable filters (AOTF) with a quasi-collinear interaction of optical and acoustic waves are utilized as spectrally selective elements. AOTF technology benefits in continuous tuning, broadband operation, excellent reproducibility and stability of the signal, as well as a high accuracy of wavelength selectivity due to the absence of mechanically moving components. A single AOTF configuration has typical linewidth in 0.05-0.15 nm range due to a frequency shift obtained during each roundtrip. A sequential AOTF arrangement enables instantaneous linewidth generation of <0.01 nm by compensating for this shift. Linewidth as narrow as 0.0036 nm is observed at 846 nm wavelength using a scanning Fabry-Perot interferometer with 50 MHz spectral resolution. Output power is in the range of 1 mW. While the majority of commercial tunable sources operate in 1060-1550 nm spectral ranges, the 840 nm spectral range is beneficial for optical coherence tomography (OCT). The developed narrow linewidth laser can be relevant for OCT with extended imaging depth, as well as spectroscopy, non-destructive testing and other applications.

  11. Miniaturized magnetic-driven scanning probe for endoscopic optical coherence tomography.

    PubMed

    Pang, Ziwei; Wu, Jigang

    2015-06-01

    We designed and implemented a magnetic-driven scanning (MDS) probe for endoscopic optical coherence tomography (OCT). The probe uses an externally-driven tiny magnet in the distal end to achieve unobstructed 360-degree circumferential scanning at the side of the probe. The design simplifies the scanning part inside the probe and thus allows for easy miniaturization and cost reduction. We made a prototype probe with an outer diameter of 1.4 mm and demonstrated its capability by acquiring OCT images of ex vivo trachea and artery samples from a pigeon. We used a spectrometer-based Fourier-domain OCT system and the system sensitivity with our prototype probe was measured to be 91 dB with an illumination power of 850 μW and A-scan exposure time of 1 ms. The axial and lateral resolutions of the system are 6.5 μm and 8.1 μm, respectively. PMID:26114041

  12. Optically driven nanostructures as the basis for large-scale quantum computing

    NASA Astrophysics Data System (ADS)

    Tsukanov, Alexander V.

    2008-03-01

    We propose a large-scale quantum computer architecture based upon the regular arrays of dopant atoms implanted into the semiconductor host matrix. The singly-ionized pairs of donors represent charge qubits on which arbitrary quantum operations can be achieved by application of two strongly detuned laser pulses. The implementation of two-qubit operations as well as the qubit read-out utilize the intermediate circuit containing a probe electron that is able to shuttle along the array of ionized ancilla donors providing the indirect conditional coupling between the qubits. The quantum bus strategy enables us to handle the qubits connected in parallel and enhances the efficiency of the quantum information processing. We demonstrate that non-trivial multi-qubit operations in the quantum register (e.g., an entanglement generation) can be accomplished by the sequence of the optical pulses combined with an appropriate voltage gate pattern.

  13. Dynamics of a mesoscopic nuclear spin ensemble interacting with an optically driven electron spin

    NASA Astrophysics Data System (ADS)

    Stanley, M. J.; Matthiesen, C.; Hansom, J.; Le Gall, C.; Schulte, C. H. H.; Clarke, E.; Atatüre, M.

    2014-11-01

    The ability to discriminate between simultaneously occurring noise sources in the local environment of semiconductor InGaAs quantum dots, such as electric and magnetic field fluctuations, is key to understanding their respective dynamics and their effect on quantum dot coherence properties. We present a discriminatory approach to all-optical sensing based on two-color resonance fluorescence of a quantum dot charged with a single electron. Our measurements show that local magnetic field fluctuations due to nuclear spins in the absence of an external magnetic field are described by two correlation times, both in the microsecond regime. The nuclear spin bath dynamics show a strong dependence on the strength of resonant probing, with correlation times increasing by a factor of 4 as the optical transition is saturated. We interpret the behavior as motional averaging of both the Knight field of the resident electron spin and the hyperfine-mediated nuclear spin-spin interaction due to optically induced electron spin flips.

  14. Optical Properties of Wurtzite Semiconductors Studied Using Cathodoluminescence Imaging and Spectroscopy

    NASA Astrophysics Data System (ADS)

    Juday, Reid

    The work contained in this dissertation is focused on the optical properties of direct band gap semiconductors which crystallize in a wurtzite structure: more specifically, the III-nitrides and ZnO. By using cathodoluminescence spectroscopy, many of their properties have been investigated, including band gaps, defect energy levels, carrier lifetimes, strain states, exciton binding energies, and effects of electron irradiation on luminescence. Part of this work is focused on p-type Mg-doped GaN and InGaN. These materials are extremely important for the fabrication of visible light emitting diodes and diode lasers and their complex nature is currently not entirely understood. The luminescence of Mg-doped GaN films has been correlated with electrical and structural measurements in order to understand the behavior of hydrogen in the material. Deeply-bound excitons emitting near 3.37 and 3.42 eV are observed in films with a significant hydrogen concentration during cathodoluminescence at liquid helium temperatures. These radiative transitions are unstable during electron irradiation. Our observations suggest a hydrogen-related nature, as opposed to a previous assignment of stacking fault luminescence. The intensity of the 3.37 eV transition can be correlated with the electrical activation of the Mg acceptors. Next, the acceptor energy level of Mg in InGaN is shown to decrease significantly with an increase in the indium composition. This also corresponds to a decrease in the resistivity of these films. In addition, the hole concentration in multiple quantum well light emitting diode structures is much more uniform in the active region when Mg-doped InGaN (instead of Mg-doped GaN) is used. These results will help improve the efficiency of light emitting diodes, especially in the green/yellow color range. Also, the improved hole transport may prove to be important for the development of photovoltaic devices. Cathodoluminescence studies have also been performed on

  15. Optically driven Archimedes micro-screws for micropump applications: multiple blade design

    NASA Astrophysics Data System (ADS)

    Baldeck, Patrice L.; Lin, Chih-Lang; Lin, Yu-Sheng; Lin, Chin-Te; Chung, Tien-Tung; Bouriau, Michel; Vitrant, Guy

    2011-10-01

    We study the rotation of photo-driven Archimedes screw with multiple blades. The micron-sized Archimedes screws are readily made by the two-photon polymerization technique. Free-floating screws that are trapped by optical tweezers align in the laser irradiation direction, and rotate spontaneously. In this study we demonstrate that the rotation speeds of two-blade-screws is twice the rotation speed of one-blade-screw. However, more complex 3-blade-screws rotate slower than 2-blade-screws due to their limited geometry resolution at this micron scale.

  16. Characterization of laser-driven shock waves in solids using a fiber optic pressure probe

    SciTech Connect

    Cranch, Geoffrey A.; Lunsford, Robert; Grun, Jacob; Weaver, James; Compton, Steve; May, Mark; Kostinski, Natalie

    2013-11-08

    Measurement of laser-driven shock wave pressure in solid blocks of polymethyl methacrylate is demonstrated using fiber optic pressure probes. Three probes based on a fiber Fabry–Perot, fiber Bragg grating, and interferometric fiber tip sensor are tested and compared. Shock waves are generated using a high-power laser focused onto a thin foil target placed in close proximity to the test blocks. The fiber Fabry–Perot sensor appears capable of resolving the shock front with a rise time of 91 ns. As a result, the peak pressure is estimated, using a separate shadowgraphy measurement, to be 3.4 GPa.

  17. High-speed guided-wave electro-optic modulators and polarization converters in III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Rahmatian, Farnoosh

    In the last few decades, the need for electronic communication has increased by several orders of magnitude. Due to the rapid growth of the demand for transmission bandwidth, development of very high-speed communication systems is crucial. This thesis describes integrated-optic electro-optic modulators using travelling-wave electrodes in compound semiconductors for ultra-high-speed guided-wave optical communications. Both Mach-Zehnder (MZ) interferometric modulators and polarization converters (PC) have been studied with particular emphasis on the latter ones. Slow-wave travelling-wave electrodes in compound semiconductors have previously been proposed and demonstrated. Here, a study of slow-wave, travelling-wave electrodes on compound semiconductors has been performed in order to significantly improve their use in ultra-wide-band guided-wave electro-optic devices. The most important factors limiting the high frequency performance of such devices, in general, are the microwave-lightwave velocity mismatch and the microwave loss on the electrodes. Based on the deeper understanding acquired through our study, we have designed, fabricated, and tested low-loss, slow-wave, travelling-wave electrodes on semi- insulating GaAs (SI-GaAs) and AlGaAs/GaAs substrates. Microwave-to-lightwave velocity matching within 1% was achieved using slow-wave coplanar strip electrodes; many of the electrodes had effective microwave indices in the range 3.3 to 3.4 (measured at frequencies up to 40 GHz). For the electrodes fabricated on SI-GaAs substrates, microwave losses of 0.22 Np/cm and 0.34 Np/cm (average values at 40 GHz) were measured for the slow-wave coplanar strip and the slow-wave coplanar waveguide electrodes, respectively. For the electrodes fabricated on the AlGaAs/GaAs substrates containing the modulators, the corresponding losses were, on average, 0.17 Np/cm higher at 40 GHz. For the first time, ultra-wide-band polarization converters using slow-wave electrodes have been

  18. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    SciTech Connect

    Ding, Baofu Alameh, Kamal

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  19. Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

    PubMed

    Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

    2014-09-15

    For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s. PMID:26466241

  20. Ultrafast all-optical logic OR gate based on two-photon absorption with a semiconductor optical amplifier-assisted delayed interferometer

    NASA Astrophysics Data System (ADS)

    Kotb, Amer

    2016-01-01

    The performance of an all-optical logic OR gate is numerically studied and simulated. This Boolean operation is realized by using a semiconductor optical amplifier (SOA) and a delayed interferometer (DI) based on two-photon absorption (TPA). The input pulse intensities are high enough so that the two-photon-induced phase change is larger than the regular gain-induced phase change. The study is carried out with the effect of the amplified spontaneous emission (ASE) taken into account in the simulation analysis. The dependence of the output quality factor ( Q-factor) on the data signals and SOA's parameters is also investigated and discussed. The achieved results show that the OR gate is capable of operating at a data speed of 250 Gb/s with logical correctness and proper Q-factor.

  1. Quantum coherence induces pulse shape modification in a semiconductor optical amplifier at room temperature

    PubMed Central

    Kolarczik, Mirco; Owschimikow, Nina; Korn, Julian; Lingnau, Benjamin; Kaptan, Yücel; Bimberg, Dieter; Schöll, Eckehard; Lüdge, Kathy; Woggon, Ulrike

    2013-01-01

    Coherence in light–matter interaction is a necessary ingredient if light is used to control the quantum state of a material system. Coherent effects are firmly associated with isolated systems kept at low temperature. The exceedingly fast dephasing in condensed matter environments, in particular at elevated temperatures, may well erase all coherent information in the material at timescales shorter than a laser excitation pulse. Here we show for an ensemble of semiconductor quantum dots that even in the presence of ultrafast dephasing, for suitably designed condensed matter systems quantum-coherent effects are robust enough to be observable at room temperature. Our conclusions are based on an analysis of the reshaping an ultrafast laser pulse undergoes on propagation through a semiconductor quantum dot amplifier. We show that this pulse modification contains the signature of coherent light–matter interaction and can be controlled by adjusting the population of the quantum dots via electrical injection. PMID:24336000

  2. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    NASA Astrophysics Data System (ADS)

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-01

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm2/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  3. An all-optical locking of a semiconductor laser to the atomic resonance line with 1 MHz accuracy.

    PubMed

    Zhang, Xiaogang; Tao, Zhiming; Zhu, Chuanwen; Hong, Yelong; Zhuang, Wei; Chen, Jingbiao

    2013-11-18

    An all-optical locking technique without extra electrical feedback control system for a semiconductor laser has been used in stabilizing the laser frequency to a hyperfine crossover transition of 87Rb 5(2)S(1/2), F = 2 → 5(2)P(3/2), F' = 2, 3 with 1 MHz level accuracy. The optical feedback signal is generated from the narrow-band Faraday anomalous dispersion optical filter (FADOF) with nonlinear saturation effect. The peak transmission of the narrow-band FADOF corresponding to 5(2)S(1/2), F = 2 → 5(2)P(3/2), F' = 2, 3 crossover transition is 18.6 %. The bandwidth is as wide as 38.9 MHz as the laser frequency changes. After locking, the laser frequency fluctuation is reduced to 1.7 MHz. The all-optical laser locking technique can be improved to much higher accuracy with increased external cavity length. The laser we have realized can provide light exactly resonant with atomic transitions used for other atom-light interaction experiments. PMID:24514314

  4. Structural, optical and electrical properties of tin oxide thin films for application as a wide band gap semiconductor

    SciTech Connect

    Sethi, Riti; Ahmad, Shabir; Aziz, Anver; Siddiqui, Azher Majid

    2015-08-28

    Tin oxide (SnO) thin films were synthesized using thermal evaporation technique. Ultra pure metallic tin was deposited on glass substrates using thermal evaporator under high vacuum. The thickness of the tin deposited films was kept at 100nm. Subsequently, the as-deposited tin films were annealed under oxygen environment for a period of 3hrs to obtain tin oxide films. To analyse the suitability of the synthesized tin oxide films as a wide band gap semiconductor, various properties were studied. Structural parameters were studied using XRD and SEM-EDX. The optical properties were studied using UV-Vis Spectrophotometry and the electrical parameters were calculated using the Hall-setup. XRD and SEM confirmed the formation of SnO phase. Uniform texture of the film can be seen through the SEM images. Presence of traces of unoxidised Sn has also been confirmed through the XRD spectra. The band gap calculated was around 3.6eV and the optical transparency around 50%. The higher value of band gap and lower value of optical transparency can be attributed to the presence of unoxidised Sn. The values of resistivity and mobility as measured by the Hall setup were 78Ωcm and 2.92cm{sup 2}/Vs respectively. The reasonable optical and electrical parameters make SnO a suitable candidate for optoelectronic and electronic device applications.

  5. Improved design of a polarization converter based on semiconductor optical waveguide bends.

    PubMed

    Obayya, S S; Rahman, B M; Grattan, K T; El-Mikati, H A

    2001-10-20

    By using an efficient vector finite-element-based beam-propagation method, we present an improved design of a polarization converter. This design relies on the use of a single-section deeply etched bent semiconductor waveguide with slanted sidewalls. By careful adjustment of the bend radius, the waveguide width, and the sidewall angle we obtained a nearly 100% polarization conversion ratio with no appreciable radiation loss and a bending angle of less than 180 degrees . PMID:18364819

  6. High-Q silica zipper cavity for optical radiation pressure driven MOMS switch

    SciTech Connect

    Tetsumoto, Tomohiro; Tanabe, Takasumi

    2014-07-15

    We design a silica zipper cavity that has high optical and mechanical Q (quality factor) values and demonstrate numerically the feasibility of a radiation pressure driven micro opto-mechanical system (MOMS) directional switch. The silica zipper cavity has an optical Q of 4.0 × 10{sup 4} and an effective mode volume V{sub mode} of 0.67λ{sup 3} when the gap between two cavities is 34 nm. The mechanical Q (Q{sub m}) is determined by thermo-elastic damping and is 2.0 × 10{sup 6} in a vacuum at room temperature. The opto-mechanical coupling rate g{sub OM} is as high as 100 GHz/nm, which allows us to move the directional cavity-waveguide system and switch 1550-nm light with 770-nm light by controlling the radiation pressure.

  7. Development of dielectric elastomer driven micro-optical zoom lens system

    NASA Astrophysics Data System (ADS)

    Kim, Hyunseok; Park, Jongkil; Chuc, Nguyen Huu; Choi, H. R.; Nam, J. D.; Lee, Y.; Jung, H. S.; Koo, J. C.

    2007-04-01

    Normally, various micro-scale devices adopt electromechanical actuators for their basic mechanical functions. Those types of actuators require a complicated power transfer system even for generating a tiny scale motion. Since the mechanical power transfer system for the micro-scale motion may require many components, the system design to fit those components into a small space is always challenging. Micro-optical zoom lens systems are recently popularly used for many portable IT devices such as digital cameras, camcorder, and cell phones, Noting the advantages of EAP actuators over the conventional electromechanical counterparts in terms of simple actuator mechanisms, a micro-optic device that is driven with the EAP actuator is introduced in the present work. EAP material selection, device design and fabrication will be also delineated.

  8. Reflective optical probing of laser-driven plasmas at the rear surface of solid targets

    NASA Astrophysics Data System (ADS)

    Metzkes, J.; Zeil, K.; Kraft, S. D.; Rehwald, M.; Cowan, T. E.; Schramm, U.

    2016-03-01

    In this paper, a reflective optical pump-probe technique for laser-driven plasmas at solid density target surfaces is presented. The technique is termed high depth-of-field time-resolved microscopy and it exploits the angular redistribution of the probe beam intensity after the probe’s reflection from an expanded and hence non-planar iso-density surface in the plasma. The main application of the robust technique, which uses simple imaging of the probe beam, is the spatio-temporal resolution of the plasma formation and expansion at the target rear surface. Analytic and numerical modeling of the experimental setup are applied for the analysis of the experimental results. The relevance and potential of the optical plasma probing method is highlighted by the application to targets of different geometries, helping to understand the target shape-related differences in the ion acceleration performance.

  9. Optimization of torque on an optically driven micromotor by manipulation of the index of refraction

    NASA Astrophysics Data System (ADS)

    Wing, Frank M., III; Mahajan, Satish; Collett, Walter

    2004-12-01

    Since the 1970"s, the focused laser beam has become a familiar tool to manipulate neutral, dielectric micro-objects. A number of authors, including Higurashi and Gauthier, have described the effects of radiation pressure from laser light on microrotors. Collett, et al. developed a wave, rather than a ray optic, approach in the calculation of such forces on a microrotor for the first time. This paper describes a modification to the design of a laser driven, radiation pressure microrotor, intended to improve the optically generated torque. Employing the wave approach, the electric and magnetic fields in the vicinity of the rotor are calculated using the finite difference time domain (FDTD) method, which takes into account the wave nature of the incident light. Forces are calculated from the application of Maxwell"s stress tensor over the surfaces of the rotor. Results indicate a significant increase in torque when the index of refraction of the microrotor is changed from a single value to an inhomogeneous profile. The optical fiber industry has successfully employed a variation in the index of refraction across the cross section of a fiber for the purpose of increasing the efficiency of light transmission. Therefore, it is hoped that various fabrication methods can be utilized for causing desired changes in the index of refraction of an optically driven microrotor. Various profiles of the index of refraction inside a microrotor are considered for optimization of torque. Simulation methodology and results of torque on a microrotor for various profiles of the index of refraction are presented. Guidelines for improvised fabrication of efficient microrotors may then be obtained from these profiles.

  10. Optical design of the Fresnel lens for LED-driven flashlight.

    PubMed

    Chen, Yi-Cheng; Nian, Shih-Chih; Huang, Ming-Shyan

    2016-02-01

    The Fresnel lens is composed of micrometer-sized v-groove structures that determine the maximum illuminance and brightness uniformity of LED-driven flashlights, which are used in high-quality photography. The fabrication quality of the microstructures and the accuracy of the geometrical curvature of the Fresnel lens affect the optical characteristics of the emitted light traveling through the lens, which in turn determines the maximum illuminance and brightness uniformity. This paper presents a systematic design procedure for fabricating the Fresnel lens and investigates the influence of geometrical design and fabrication process on optical performance. The optical analysis was performed using the commercial software TracePro. The results revealed that a small tip radius of the v-groove microstructure facilitates brightness uniformity. Furthermore, both the simulation and the experimental results revealed that Fresnel lenses fabricated through injection molding or injection compression molding have either errors of microstructure height more than 3%-6% or curvature errors higher than 6%, which would affect the optical performance, especially the brightness uniformity. PMID:26836072

  11. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage

    SciTech Connect

    Ziegler, Mathias; Hempel, Martin; Tomm, Jens W.; Elsaesser, Thomas; Larsen, Henning E.; Andersen, Peter E.; Clausen, Soennik; Elliott, Stella N.

    2010-07-12

    The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.

  12. Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

    NASA Astrophysics Data System (ADS)

    Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

    2015-05-01

    The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

  13. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application

    PubMed Central

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  14. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application.

    PubMed

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  15. Theoretical Study of Triboelectric-Potential Gated/Driven Metal-Oxide-Semiconductor Field-Effect Transistor.

    PubMed

    Peng, Wenbo; Yu, Ruomeng; He, Yongning; Wang, Zhong Lin

    2016-04-26

    Triboelectric nanogenerator has drawn considerable attentions as a potential candidate for harvesting mechanical energies in our daily life. By utilizing the triboelectric potential generated through the coupling of contact electrification and electrostatic induction, the "tribotronics" has been introduced to tune/control the charge carrier transport behavior of silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET). Here, we perform a theoretical study of the performances of tribotronic MOSFET gated by triboelectric potential in two working modes through finite element analysis. The drain-source current dependence on contact-electrification generated triboelectric charges, gap separation distance, and externally applied bias are investigated. The in-depth physical mechanism of the tribotronic MOSFET operations is thoroughly illustrated by calculating and analyzing the charge transfer process, voltage relationship to gap separation distance, and electric potential distribution. Moreover, a tribotronic MOSFET working concept is proposed, simulated and studied for performing self-powered FET and logic operations. This work provides a deep understanding of working mechanisms and design guidance of tribotronic MOSFET for potential applications in micro/nanoelectromechanical systems (MEMS/NEMS), human-machine interface, flexible electronics, and self-powered active sensors. PMID:27077327

  16. Optically driven oscillations of ellipsoidal particles. Part II: ray-optics calculations.

    PubMed

    Loudet, J-C; Mihiretie, B M; Pouligny, B

    2014-12-01

    We report numerical calculations on the mechanical effects of light on micrometer-sized dielectric ellipsoids immersed in water. We used a simple two-dimensional ray-optics model to compute the radiation pressure forces and torques exerted on the object as a function of position and orientation within the laser beam. Integration of the equations of motion, written in the Stokes limit, yields the particle dynamics that we investigated for different aspect ratios k. Whether the beam is collimated or focused, the results show that above a critical aspect ratio k(C), the ellipsoids cannot be stably trapped on the beam axis; the particle never comes to rest and rather oscillates permanently in a back-and-forth motion involving both translation and rotation in the vicinity of the beam. Such oscillations are a direct evidence of the non-conservative character of optical forces. Conversely, stable trapping can be achieved for k < k(C) with the particle standing idle in a vertical position. These predictions are in very good qualitative agreement with experimental observations. The physical origin of the instability may be understood from the force and torque fields whose structures greatly depend on the ellipsoid aspect ratio and beam diameter. The oscillations arise from a non-linear coupling of the forces and torques and the torque amplitude was identified as the bifurcation control parameter. Interestingly, simulations predict that sustained oscillations can be suppressed through the use of two coaxial counterpropagating beams, which may be of interest whenever a static equilibrium is required as in basic force and torque measurements or technological applications. PMID:25577403

  17. Demonstration and optimisation of an ultrafast all-optical AND logic gate using four-wave mixing in a semiconductor optical amplifier

    SciTech Connect

    Razaghi, M; Nosratpour, A; Das, N K

    2013-02-28

    We have proposed an all-optical AND logic gate based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) integrated with an optical filter. In the scheme proposed, the preferred logical function can be performed without using a continuous-wave (cw) signal. The modified nonlinear Schroedinger equation (MNLSE) is used for the modelling wave propagation in a SOA. The MNLSE takes into account all nonlinear effects relevant to pico- and sub-picosecond pulse durations and is solved by the finite-difference beam-propagation method (FD-BPM). Based on the simulation results, the optimal output signal with a 40-fJ energy can be obtained at a bit rate of 50 Gb s{sup -1}. In the simulations, besides the nonlinearities included in the model, the pattern effect of the signals propagating in the SOA medium and the effect of the input signal bit rate are extensively investigated to optimise the system performance. (optical logic elements)

  18. The preparation of organic infrared semiconductor phthalocyanine gadolinium (III) and its optical and structural characterizations

    NASA Astrophysics Data System (ADS)

    Tang, Li-bin; Ji, Rong-bin; Song, Li-yuan; Chen, Xue-mei; Ma, Yu; Wang, Yi-feng; Qian, Ming; Song, Lei; Su, Hai-ying; Zhuang, Ji-sheng; Yang, Rui-yu

    2009-07-01

    In order to increase the species of organic infrared semiconductor, we synthesized organic infrared semiconductor phthalocyanine gadolinium by using o-phthalodinitrile and GdCl3 as reactants, ammonium molybdate as catalyzer. Under light and dark field modes of microscope, the translucency emerald-like powder of phthalocyanine gadolinium has been observed, the size of the small grain for the sample is around 5μm in diameter, the size of larger grain may reach to several tens of microns. The main vibrational peaks in FT-IR spectrum and Raman spectrum have been assigned. Elementary analysis shows that the experimental data of phthalocyanine gadolinium in the main agree with those of calculated data. The UV-Vis absorption spectrum of the sample indicates the sandwich-like structure of phthalocyanine gadolinium. The organic infrared semiconductor phthalocyanine gadolinium thin film on quartz substrate has been prepared with our synthesized powdered sample by using solution method. The characterizations of XRD and UV-Vis-NIR absorption have been carried out for the phthalocyanine gadolinium thin film on quartz substrate, XRD shows that phthalocyanine gadolinium diffractions occur at 2θ=6.851,8.290 and 8.820 degrees, the corresponding plane spacings (d) for the diffraction peaks are 12.8921, 10.6570, and 10.0176Å.The diffraction peaks locate at low diffraction angle, suggesting that the molecular size of the phthalocyanine gadolinium is big that causes the large spacing of crystal planes. The UV-Vis-NIR absorption of phthalocyanine gadolinium thin film on quartz substrate implies that within near infrared band there is a absorption in the 1.3~2.0μm wavelength range peaked at ca. 1.75μm, indicating the important potential application value of phthalocyanine gadolinium in the field of organic infrared optoelectronics.

  19. Quantum optics with quantum dots. Towards semiconductor sources of quantum light for quantum information processing

    NASA Astrophysics Data System (ADS)

    Beveratos, Alexios; Abram, Izo; Gérard, Jean-Michel; Robert-Philip, Isabelle

    2014-12-01

    For the past fifteen years, single semiconductor quantum dots, often referred to as solid-state artificial atoms, have been at the forefront of various research direction lines for experimental quantum information science, in particular in the development of practical sources of quantum states of light. Here we review the research to date, on the tailoring of the emission properties from single quantum dots producing single photons, indistinguishable single photons and entangled photon pairs. Finally, the progress and future prospects for applications of single dots in quantum information processing is considered.

  20. Precision, all-optical measurement of external quantum efficiency in semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Chengao; Li, Chia-Yeh; Hasselbeck, Michael P.; Imangholi, Babak; Sheik-Bahae, Mansoor

    2011-05-01

    External quantum efficiency of semiconductor photonic devices is directly measured by wavelength-dependent laser-induced temperature change (scanning laser calorimetry) with very high accuracy. Maximum efficiency is attained at an optimum photo-excitation level that can be determined with an independent measurement of power-dependent temperature or power-dependent photoluminescence. Time-resolved photoluminescence lifetime and power-dependent photoluminescence measurements are used to evaluate unprocessed heterostructures for critical performance parameters. The crucial importance of parasitic background absorption is discussed.

  1. Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

    PubMed

    Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

    2015-07-16

    We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. PMID:26073812

  2. Wavelength conversion for polarization multiplexing signal using four-wave mixing in semiconductor optical amplifier with reduced polarization crosstalk

    NASA Astrophysics Data System (ADS)

    Zhou, Hui; Chen, Ming; Wan, Qiuzhen; Zheng, Zhiwei

    2016-06-01

    We investigated wavelength conversion for polarization multiplexing signal based on four-wave mixing in a semiconductor optical amplifier. We found that the converted signals endured crosstalk among the pol-muxed channels. We also proposed and demonstrated a wavelength conversion scheme with polarization diversity technique. By utilizing the technique, the converted polarization multiplexing signal can be received without crosstalk. In addition, the performance of the proposed system is numerically analyzed with respect to the bit error rate of the converted signal, different frequency spacing between signal and pump and modulated data rate. The simulation results show that the proposed scheme may be a promising method to realize transparent wavelength conversion for polarization multiplexing signals.

  3. Analysis of the effects of periodic forcing in the spike rate and spike correlation's in semiconductor lasers with optical feedback

    NASA Astrophysics Data System (ADS)

    Quintero-Quiroz, C.; Sorrentino, Taciano; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    We study the dynamics of semiconductor lasers with optical feedback and direct current modulation, operating in the regime of low frequency fluctuations (LFFs). In the LFF regime the laser intensity displays abrupt spikes: the intensity drops to zero and then gradually recovers. We focus on the inter-spike-intervals (ISIs) and use a method of symbolic time-series analysis, which is based on computing the probabilities of symbolic patterns. We show that the variation of the probabilities of the symbols with the modulation frequency and with the intrinsic spike rate of the laser allows to identify different regimes of noisy locking. Simulations of the Lang-Kobayashi model are in good qualitative agreement with experimental observations.

  4. Laser Cooling and Trapping of Neutral Mercury Atoms Using an Optically-Pumped External-Cavity Semiconductor Laser

    NASA Astrophysics Data System (ADS)

    Paul, Justin; Lytle, Christian; Jones, R. Jason

    2011-05-01

    The level structure of the Hg atom is similar to other alkaline earth-like atoms, offering the possibility to realize an extremely high quality resonance factor (Q) on the ``clock'' transition (1S0- 3P0) when confined in an optical lattice at the Stark-shift free wavelength. A key feature of the Hg system is the reduced uncertainty due to black-body induced Stark shifts, making it an interesting candidate as an optical frequency standard. One challenge to laser-cooling neutral Hg atoms is finding a reliable source for cooling on the 1S0-3 P1 transition at 253.7 nm. We employ an optically pumped semiconductor laser (OPSEL) operating at 1015 nm, whose frequency is quadrupled in two external-cavity doubling stages to generate over 120 mW at 253.7 nm. With this new laser source we have trapped Hg199 from a background vapor in a standard MOT. We trap up to 2 × 106 atoms with a 1/e2 radius of our MOT of ~310 microns, corresponding to a density of 1.28 × 1010 atoms/cm3. We report on the progress of our Hg system and plans for precision lattice-based spectroscopy of the clock transition. Support for this work is supported through the U.S. Air Force Office of Scientific Research (AFOSR) through grant no. FA9550-09-1-0563.

  5. Comparison of pulse propagation and gain saturation characteristics among different input pulse shapes in semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Barua, Suchi; Das, Narottam; Nordholm, Sven; Razaghi, Mohammad

    2016-01-01

    This paper presents the pulse propagation and gain saturation characteristics for different input optical pulse shapes with different energy levels in semiconductor optical amplifiers (SOAs). A finite-difference beam propagation method (FD-BPM) is used to solve the modified nonlinear Schrödinger equation (MNLSE) for the simulation of nonlinear optical pulse propagation and gain saturation characteristics in the SOAs. In this MNLSE, the gain spectrum dynamics, gain saturation are taken into account those are depend on the carrier depletion, carrier heating, spectral hole-burning, group velocity dispersion, self-phase modulation and two photon absorption. From this simulation, we obtained the output waveforms and spectra for different input pulse shapes considering different input energy levels. It has shown that the output pulse shape has changed due to the variation of input parameters, such as input pulse shape, input pulse width, and input pulse energy levels. It also shown clearly that the peak position of the output waveforms are shifted toward the leading edge which is due to the gain saturation of the SOA. We also compared the gain saturation characteristics in the SOA for different input pulse shapes.

  6. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm. PMID:27505789

  7. Experimental demonstration of directive Si3N4 optical leaky wave antennas with semiconductor perturbations at near infrared frequencies

    NASA Astrophysics Data System (ADS)

    Zhao, Qiancheng; Guclu, Caner; Huang, Yuwang; Campione, Salvatore; Capolino, Filippo; Boyraz, Ozdal

    2015-02-01

    Directive optical leaky wave antennas (OLWAs) with tunable radiation pattern are promising integrated optical modulation and scanning devices. OLWAs fabricated using CMOS-compatible semiconductor planar waveguide technology have the potential of providing high directivity with electrical tunability for modulation and switching capabilities. We experimentally demonstrate directive radiation from a silicon nitride (Si3N4) waveguide-based OLWA. The OLWA design comprises 50 crystalline Si perturbations buried inside the waveguide, with a period of 1 μm, each with a length of 260 nm and a height of 150 nm, leading to a directive radiation pattern at telecom wavelengths. The measured far-field radiation pattern at the wavelength of 1540 nm is very directive, with the maximum intensity at the angle of 84.4° relative to the waveguide axis and a half-power beam width around 6.2°, which is consistent with our theoretical predictions. The use of semiconductor perturbations facilitates electronic radiation control thanks to the refractive index variation induced by a carrier density change in the perturbations. To assess the electrical modulation capability, we study carrier injection and depletion in Si perturbations, and investigate the Franz-Keldysh effect in germanium as an alternative way. We theoretically show that the silicon wire modulator has a -3 dB modulation bandwidth of 75 GHz with refractive index change of 3×10-4 in depletion mode, and 350 MHz bandwidth with refractive index change of 1.5×10-2 in injection mode. The Franz-Keldysh effect has the potential to generate very fast modulation in radiation control at telecom wavelengths.

  8. Study of π-conjugation effect of organic semiconductors on their optical parameters

    NASA Astrophysics Data System (ADS)

    Ahmad, Zubair; Zafar, Qayyum; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

    2016-04-01

    Metal free organic semiconductor "7,16-bis(3,3-dimethyl-3H-indol-2-yl)-5,14-dihydrodibenzo [b,i][1,4,8,11] tetraazacyclotetradecine" and metal free with extended π-conjugation organic semiconductor "8,19-bis(3,3-dimethyl-3H-indol-2-yl)-6,17-dihydrodinaphthol [2,3-b:2‧,3‧-i][1,4,8,11] tetraazacyclotetradecine have been synthesized and the effect of conjugation on their photovoltaic parameters have been investigated. The photo-physical study reveals band gaps of 2.61 eV for metal free and 2.16 eV for extended material. The HOMO/LUMO levels of the materials are calculated using cyclic voltammetry (CV) study. The open circuit voltages of metal free and extended materials in single layer photovoltaic cells are observed to be 0.72 and 0.73 under simulated solar light illumination (air mass 1.5 G, 100 mW/cm2), respectively. The short circuit current in the extended materials is found to be more than ∼1.5 times higher the metal free material.

  9. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Mar, A.

    1997-08-01

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to well over 10 million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in the vertical and lateral directions. The first was achieved by varying the spatial distribution of the trigger light thereby widening the current filaments that are characteristic of the high gain switches. The authors reduced the carrier density in the vertical direction by using ion implantation. These results were obtained for currents of about 10 A, current duration of 3.5 ns, and switched voltage of {approximately}2 kV. At currents of {approximately}70 A, the switches last for 0.6 million pulses. In order to improve the performance at high currents new processes such as deep diffusion and epitaxial growth of contacts are being pursued. To guide this effort the authors measured a carrier density of 6 x 10{sup 18} electrons (or holes)/cm{sup 3} in filaments that carry a current of 5 A.

  10. Analysis methodology for a piezoelectric-driven optical tracker for ground-based interferometry

    NASA Astrophysics Data System (ADS)

    Clark, James H.; Penado, F. Ernesto

    2014-09-01

    We present our analysis methodology for a 20.3 cm prototype optical tracker to determine why instabilities occur below 50 Hz and suggest improvements. The Navy Precision Optical Interferometer makes use of six small optical telescope stations spaced along a Y-array to synthesize an equivalent single larger telescope. Piezoelectric-driven optical trackers steer 12.5 cm output beams from each station to an optics laboratory up to 700 m distant. A percentage of this starlight is split off and used in a closed-loop feedback to update the pointing of the telescope and steering of the tracker. Steering stabilizes atmospheric induced beam trajectory deviations, required for fringe generation. Because of closedloop feedback, we require all fundamental frequencies to be at least 3 times the desired operational frequency, or 150 Hz. These trackers are modified commercial aluminum gimbal mounts with flex-pivot axles and very small damping ratio. Steering is tip/tilt mirror rotation by push-only actuators and a return spring. It is critical contact be maintained between actuator, mirror mount and return spring. From our dynamic analysis, the 122 N return spring is 2.9 times that required, and has a natural frequency equal to 238 Hz. The range of steering, 140 microradian, is double that required and the 0.077 microradian precision is 2.6 times that required. The natural frequency of the tracker is 66 Hz and the tuned closed-loop operational frequency is only 22 Hz. We conclude the low fundamental frequency of the mount limits its performance below 50 Hz and stiffening the structure is required.

  11. ZnMnO diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, optical and magneto-optical properties

    NASA Astrophysics Data System (ADS)

    Savchuk, A. I.; Perrone, A.; Lorusso, A.; Stolyarchuk, I. D.; Savchuk, O. A.; Shporta, O. A.

    2014-05-01

    Nanoparticles of ZnO and Zn1-xMnxO were synthesized by pulsed laser ablation in liquid medium (PLAL). Metal zinc target was used for preparing of pure ZnO nanostructures and Zn1-xMnxO ceramic plates served for preparing of ternary nanoparticles. As synthesized nanomaterials are characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy analysis (EDS), atomic force microscopy (AFM), UV-vis absorption, photoluminescence and Faraday rotation spectroscopy. SEM images showed a well-defined flower-like nanostructures. Absorption edge of Zn0.95Mn0.05O nanoparticles in colloid solution exhibits blue shift due to confinement effect. The observed photoluminescence peaks are attributed to the band-edge transitions and vacancies or defects. The Faraday rotation as a function of photon energy demonstrates behavior typical for diluted magnetic semiconductors (DMSs) in paramagnetic state.

  12. Data-driven approach to optimum wavelength selection for diffuse optical imaging

    NASA Astrophysics Data System (ADS)

    Dempsey, Laura A.; Cooper, Robert J.; Roque, Tania; Correia, Teresa; Magee, Elliott; Powell, Samuel; Gibson, Adam P.; Hebden, Jeremy C.

    2015-01-01

    The production of accurate and independent images of the changes in concentration of oxyhemoglobin and deoxyhemoglobin by diffuse optical imaging is heavily dependent on which wavelengths of near-infrared light are chosen to interrogate the target tissue. Although wavelengths can be selected by theoretical methods, in practice the accuracy of reconstructed images will be affected by wavelength-specific and system-specific factors such as laser source power and detector sensitivity. We describe the application of a data-driven approach to optimum wavelength selection for the second generation of University College London's multichannel, time-domain optical tomography system (MONSTIR II). By performing a functional activation experiment using 12 different wavelengths between 690 and 870 nm, we were able to identify the combinations of 2, 3, and 4 wavelengths which most accurately reproduced the results obtained using all 12 wavelengths via an imaging approach. Our results show that the set of 2, 3, and 4 wavelengths which produce the most accurate images of functional activation are [770, 810], [770, 790, 850], and [730, 770, 810, 850] respectively, but also that the system is relatively robust to wavelength selection within certain limits. Although these results are specific to MONSTIR II, the approach we developed can be applied to other multispectral near-infrared spectroscopy and optical imaging systems.

  13. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  14. Boron doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  15. Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

    NASA Astrophysics Data System (ADS)

    Kim, Jungho; Yu, Bong-Ahn

    2015-03-01

    We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

  16. The Physics of Semiconductors

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius

    The historic development of semiconductor physics and technology began in the second half of the 19th century. Interesting discussions of the early history of the physics and chemistry of semiconductors can be found in treatises of G. Busch [2] and Handel [3]. The history of semiconductor industry can be followedin the text of Morris [4] and Holbrook et al. [5]. In 1947, the realization of the transistor was the impetus to a fast-paced development that created the electronics and photonics industries. Products founded on the basis of semiconductor devices such as computers (CPUs, memories), optical-storage media (lasers for CD, DVD), communication infrastructure (lasers and photodetectors for optical-fiber technology, high frequency electronics for mobile communication), displays (thin film transistors, LEDs), projection (laser diodes) and general lighting (LEDs) are commonplace. Thus, fundamental research on semiconductors and semiconductor physics and its offspring in the form of devices has contributed largely to the development of modern civilization and culture.

  17. Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction

    NASA Astrophysics Data System (ADS)

    Wu, Yue; Tong, Qingjun; Liu, Gui-Bin; Yu, Hongyi; Yao, Wang

    2016-01-01

    We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The quantum controls are discussed when the confinement induces valley hybridization and when the valley hybridization is absent. We show that the bulk valley and spin optical selection rules can be inherited in different forms in the two scenarios, both of which allow the definition of spin-valley qubit with desired optical controllability. We also investigate nuclear spin-induced decoherence and quantum control of electron-nuclear spin entanglement via intervalley terms of the hyperfine interaction. Optically controlled two-qubit operations in a single quantum dot are discussed.

  18. Optical wafer metrology sensors for process-robust CD and overlay control in semiconductor device manufacturing

    NASA Astrophysics Data System (ADS)

    den Boef, Arie J.

    2016-06-01

    This paper presents three optical wafer metrology sensors that are used in lithography for robustly measuring the shape and position of wafers and device patterns on these wafers. The first two sensors are a level sensor and an alignment sensor that measure, respectively, a wafer height map and a wafer position before a new pattern is printed on the wafer. The third sensor is an optical scatterometer that measures critical dimension-variations and overlay after the resist has been exposed and developed. These sensors have different optical concepts but they share the same challenge that sub-nm precision is required at high throughput on a large variety of processed wafers and in the presence of unknown wafer processing variations. It is the purpose of this paper to explain these challenges in more detail and give an overview of the various solutions that have been introduced over the years to come to process-robust optical wafer metrology.

  19. Electromagnetically induced grating via coherently driven the n-doped In0.47Ga0.53As semiconductor quantum well nanostructure

    NASA Astrophysics Data System (ADS)

    Naseri, Tayebeh

    2016-06-01

    A new scheme for investigating electromagnetically induced grating (EIG) in the vanishing two-photon absorption condition in a three-level ladder-configuration n-doped semiconductor quantum well is presented. By applying a standing-wave field interacting with the system, the absorption and dispersion of the probe field will change with the spatial periodical modulation. It is shown that the first-order diffraction intensity sensitively depends on the intensity of coupling fields, detuning of applied laser fields and interaction length. Moreover, it can reach its maximum on varying the system parameters. A novel result shows the considerable efficiency of higher order diffractions is significantly improved via relative phase between applied laser fields. Furthermore, it is found that the intensity of the switching and coupling fields can increase the efficiency of the phase grating in the present model. Such a unique feature of the cooperative Electromagnetic Induced Grating may be extended to further develop diffraction based new photonic devices in quantum information networks and new photonic devices in all-optical switching and optical imaging.

  20. Pump-probe quantum state tomography in a semiconductor optical amplifier.

    PubMed

    Grosse, N B; Owschimikow, N; Aust, R; Lingnau, B; Koltchanov, A; Kolarczik, M; Lüdge, K; Woggon, U

    2014-12-29

    Pump-probe quantum state tomography was applied to the transmission of a coherent state through an In(Ga)As based quantum dot optical amplifier during the interaction with an optical pump pulse. The Wigner function and the statistical moments of the field were extracted and used to determine the degree of population inversion and the signal-to-noise ratio in a sub-picosecond time window. PMID:25607214