Inverse spin Hall effect by spin injection

NASA Astrophysics Data System (ADS)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides.

PubMed

Zhao, Pei; Li, Jianwei; Jin, Hao; Yu, Lin; Huang, Baibiao; Ying, Dai

2018-04-18

Giant tunnel magnetoresistance (TMR) and perfect spin-injection efficiency (SIE) are extremely significant for modern spintronic devices. Quantum transport properties in a two-dimensional (2D) VS2/MoS2/VS2 magnetic tunneling junction (MTJ) are investigated theoretically within the framework of density functional theory combining with the non-equilibrium Green's functions (DFT-NEGF) method. Our results indicate that the designed MTJ exhibits a TMR with a value up to 4 × 103, which can be used as a switch of spin-electron devices. And due to the huge barrier for spin-down transport, the spin-down electrons could hardly cross the central scattering region, thus achieving a perfect SIE. Furthermore, we also explore for the effect of bias voltage on the TMR and SIE. We find that the TMR increases with the increasing bias voltage, and the SIE is robust against either bias or gate voltage in MTJs, which can serve as effective spin filter devices. Our results can not only give fresh impetus to the research community to build MTJs but also provide potential materials for spintronic devices.

Spin accumulation in permalloy-ZnO heterostructures from both electrical injection and spin pumping

NASA Astrophysics Data System (ADS)

Wang, Xiaowei; Yang, Yumeng; Wang, Ying; Luo, Ziyan; Xie, Hang; Wu, Yihong

2017-11-01

We report the results of room temperature spin injection and detection studies in ZnO using both electrical injection and spin pumping. At ferromagnetic resonance, an interfacial voltage with a constant polarity upon magnetization reversal is observed in permalloy-ZnO heterostructures, which is attributed to spin accumulation after ruling out other origins. Simultaneous electrical injection during spin pumping is achieved in samples with large interface resistance or insertion of a thin MgO layer at the interface of permalloy and ZnO. From the pumping frequency dependence of detected voltage, a spin lifetime of 32 ps is extracted for ZnO at room temperature, despite the fact that there was no Hanle effect observed in the same device using the conventional three-terminal DC measurement.

Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence.

PubMed

Tao, Bingshan; Barate, Philippe; Devaux, Xavier; Renucci, Pierre; Frougier, Julien; Djeffal, Abdelhak; Liang, Shiheng; Xu, Bo; Hehn, Michel; Jaffrès, Henri; George, Jean-Marie; Marie, Xavier; Mangin, Stéphane; Han, Xiufeng; Wang, Zhanguo; Lu, Yuan

2018-05-31

Remanent spin injection into a spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LEDs with a thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of the Mo/CoFeB/MgO injector shows more advanced thermal stability than that of the Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400 °C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300 °C annealing, and even remains at 4% after 400 °C annealing. In contrast, the Ta capped spin-LED almost completely loses the remanent PC under 400 °C annealing. Combined advanced electron microscopy and spectroscopy studies reveal that a large amount of Ta diffuses into the MgO tunneling barrier through the CoFeB layer after 400 °C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the highly thermally stable Mo/CoFeB/MgO spin injector for efficient electrical spin injection in remanence.

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

NASA Astrophysics Data System (ADS)

Gurram, M.; Omar, S.; van Wees, B. J.

2018-07-01

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2/Si substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

Spin injection and detection in lateral spin valves with hybrid interfaces

NASA Astrophysics Data System (ADS)

Wang, Le; Liu, Wenyu; Ying, Hao; Chen, Luchen; Lu, Zhanjie; Han, Shuo; Chen, Shanshan; Zhao, Bing; Xu, Xiaoguang; Jiang, Yong

2018-06-01

Spin injection and detection in lateral spin valves with hybrid interfaces comprising a Co/Ag transparent contact and a Co/MgO/Ag junction (III) are investigated at room temperature in comparison with pure Co/Ag transparent contacts (I) and Co/MgO/Ag junctions (II). The measured spin-accumulation signals of a type III device are five times higher than those for type I. The extracted spin diffusion length in Ag is 180 nm for all three types of devices. The enhancement of the spin signal of the hybrid structure is mainly attributed to the increase of the interfacial spin polarization from the Co/MgO/Ag junction.

Possibility of Cooper-pair formation controlled by multi-terminal spin injection

NASA Astrophysics Data System (ADS)

Ohnishi, K.; Sakamoto, M.; Ishitaki, M.; Kimura, T.

2018-03-01

A multi-terminal lateral spin valve consisting of three ferromagnetic nanopillars on a Cu/Nb bilayer has been fabricated. We investigated the influence of the spin injection on the superconducting properties at the Cu/Nb interface. The non-local spin valve signal exhibits a clear spin insulation signature due to the superconducting gap of the Nb. The magnitude of the spin signal is found to show the probe configuration dependence. From the careful analysis of the bias current dependence, we found the suppression of the superconductivity due to the exchange interaction between the Cooper pair and accumulated spin plays an important role in the multi-terminal spin injections. We also discuss about the possibility of the Cooper-pair formation due to the spin injection from the two injectors with the anti-parallel alignment.

Spin injection in n-type resonant tunneling diodes.

PubMed

Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J

2012-10-25

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

PubMed Central

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-01-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory. PMID:27374496

Spin Funneling for Enhanced Spin Injection into Ferromagnets

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

Spin injection in n-type resonant tunneling diodes

PubMed Central

2012-01-01

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers. PMID:23098559

Spin injection into Pt-polymers with large spin-orbit coupling

NASA Astrophysics Data System (ADS)

Sun, Dali; McLaughlin, Ryan; Siegel, Gene; Tiwari, Ashutosh; Vardeny, Z. Valy

2014-03-01

Organic spintronics has entered a new era of devices that integrate organic light-emitting diodes (OLED) in organic spin valve (OSV) geometry (dubbed bipolar organic spin valve, or spin-OLED), for actively manipulating the device electroluminescence via the spin alignment of two ferromagnetic electrodes (Science 337, 204-209, 2012; Appl. Phys. Lett. 103, 042411, 2013). Organic semiconductors that contain heavy metal elements have been widely used as phosphorescent dopants in white-OLEDs. However such active materials are detrimental for OSV operation due to their large spin-orbit coupling (SOC) that may limit the spin diffusion length and thus spin-OLED based on organics with large SOC is a challenge. We report the successful fabrication of OSVs based on pi-conjugated polymers which contain intrachain Platinum atoms (dubbed Pt-polymers). Spin injection into the Pt-polymers is investigated by the giant magnetoresistance (GMR) effect as a function of bias voltage, temperature and polymer layer thickness. From the GMR bias voltage dependence we infer that the ``impendence mismatch'' between ferromagnetic electrodes and Pt-polymer may be suppressed due to the large SOC. Research sponsored by the NSF (Grant No. DMR-1104495) and NSF-MRSEC (DMR 1121252) at the University of Utah.

Spin injection devices with high mobility 2DEG channels (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ciorga, Mariusz; Oltscher, Martin; Kuczmik, Thomas; Loher, Josef; Bayer, Andreas; Schuh, Dieter; Bougeard, Dominique; Weiss, Dieter

2016-10-01

Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of 20% measured in local configuration, i.e., with spin-polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)

Epitaxy of spin injectors and their application toward spin-polarized lasers

NASA Astrophysics Data System (ADS)

Holub, Michael A.

Spintronics is an emerging; multidisciplinary field which examines the role of electron and nuclear spin in solid-state physics. Recent experiments suggest that the spin degree of freedom may be exploited to enhance the functionality of conventional semi conductor devices. Such endeavors require methods for efficient spin injection; spin transport, and spin detection in semiconductor heterostructures. This dissertation investigates the molecular-beam epitaxial growth and properties of ferromagnetic materials for electrical spin injection. Spin-injecting contacts are incorporated into prototype spintronic devices and their performance is examined. Two classes of materials may be used for spin injection into semiconductors: dilute magnetic semiconductor and ferromagnetic metals. The low-temperature growth and properties of (Al)Gal4nAs and In(Ga)MnAs epilayers and nanostructures are investigated, and a technique for the self-organized growth of Mn-doped InAs quantum dots is developed. The epitaxial growth of (Fe,MnAs)/(Al)GaAs Schottky tunnel barriers for electron spin injection is also investigated. The spin-injection efficiency of these contacts is assessed using a spin-valve or spin-polarized light-emitting diode. Lateral MnAs/GaAs spin-valves where Schottky tunnel barriers enable all-electrical spin injection and detection are grown, fabricated, and characterized. The Rowell criteria confirm that tunneling is the dominant, transport mechanism for the Schottky tunnel contacts. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K are observed for a 0.5 pin channel length spin-valve. Measurements using non-local spin-valves and other control devices verify that spurious contributions from anisotropic magnetoresistance and local Hall effects are negligible. Spin-polarized lasers offer inherent polarization control, reduced chirp, and lower threshold currents and are expected to outperform their charge-based counterparts. Initial efforts to realize a spin

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

NASA Astrophysics Data System (ADS)

Lesne, E.; Fu, Yu; Oyarzun, S.; Rojas-Sánchez, J. C.; Vaz, D. C.; Naganuma, H.; Sicoli, G.; Attané, J.-P.; Jamet, M.; Jacquet, E.; George, J.-M.; Barthélémy, A.; Jaffrès, H.; Fert, A.; Bibes, M.; Vila, L.

2016-12-01

The spin-orbit interaction couples the electrons’ motion to their spin. As a result, a charge current running through a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronic functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronic hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism--the Rashba effect--in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES and highlight the importance of a long scattering time to achieve efficient spin-to-charge interconversion.

Demonstration of the spin solar cell and spin photodiode effect

PubMed Central

Endres, B.; Ciorga, M.; Schmid, M.; Utz, M.; Bougeard, D.; Weiss, D.; Bayreuther, G.; Back, C.H.

2013-01-01

Spin injection and extraction are at the core of semiconductor spintronics. Electrical injection is one method of choice for the creation of a sizeable spin polarization in a semiconductor, requiring especially tailored tunnel or Schottky barriers. Alternatively, optical orientation can be used to generate spins in semiconductors with significant spin-orbit interaction, if optical selection rules are obeyed, typically by using circularly polarized light at a well-defined wavelength. Here we introduce a novel concept for spin injection/extraction that combines the principle of a solar cell with the creation of spin accumulation. We demonstrate that efficient optical spin injection can be achieved with unpolarized light by illuminating a p-n junction where the p-type region consists of a ferromagnet. The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge. PMID:23820766

Non-local opto-electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Jamet, Matthieu; Rortais, Fabien; Zucchetti, Carlo; Ghirardini, Lavinia; Ferrari, Alberto; Vergnaud, Celine; Widiez, Julie; Marty, Alain; Attane, Jean-Philippe; Jaffres, Henri; George, Jean-Marie; Celebrano, Michele; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco; Bottegoni, Federico

Non-local charge carriers injection/detection schemes lie at the foundation of information manipulation in integrated systems. The next generation electronics may operate on the spin instead of the charge and germanium appears as the best hosting material to develop such spintronics for its compatibility with mainstream silicon technology and long spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin orientation. In this presentation, we demonstrate injection of pure spin currents in Ge, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, by using lithographed nanostructures to diffuse the light and create an in-plane polarized electron spin population. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect across a Pt stripe. Supported by the ANR project SiGeSPIN #ANR-13-BS10-0002 and the CARIPLO project SEARCH-IV (Grant 2013-0623).

Spectral linewidth of spin-current nano-oscillators driven by nonlocal spin injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demidov, V. E., E-mail: demidov@uni-muenster.de; Divinskiy, B.; Urazhdin, S.

2015-11-16

We study experimentally the auto-oscillation characteristics of magnetic nano-oscillators driven by pure spin currents generated by nonlocal spin injection. By combining micro-focus Brillouin light scattering spectroscopy with electronic microwave spectroscopy, we are able to simultaneously perform both the spatial and the high-resolution spectral analyses of auto-oscillations induced by spin current. We find that the devices exhibit a highly coherent dynamics with the spectral linewidth of a few megahertz at room temperature. This narrow linewidth can be achieved over a wide range of operational frequencies, demonstrating a significant potential of nonlocal oscillators for applications.

Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

NASA Astrophysics Data System (ADS)

Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

2017-12-01

We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

Energy efficient hybrid computing systems using spin devices

NASA Astrophysics Data System (ADS)

Sharad, Mrigank

Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.

Spin-polarized current injection induced magnetic reconstruction at oxide interface

NASA Astrophysics Data System (ADS)

Fang, F.; Yin, Y. W.; Li, Qi; Lüpke, G.

2017-01-01

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications.

Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

NASA Astrophysics Data System (ADS)

Bhat, Shwetha G.; Kumar, P. S. Anil

2016-12-01

Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (ΔV) in semiconductor is found to be associated with a drastic increment in ΔV in Fe3O4 based devices for temperature <120 K (T V, the Verwey transition). Such an enhancement of ΔV is absent in the devices with Fe as spin source. Further, the overall device resistance has no drastic difference at T V. This renders a direct proof that the observed ΔV is not influenced by the so-called metal-to-insulator transition of Fe3O4 at T V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T V has to be reinvestigated.

Nonlinear and Nonequilibrium Spin Injection in Magnetic Tunneling Junctions

NASA Astrophysics Data System (ADS)

Guo, Hong

2007-03-01

Quantitative analysis of charge and spin quantum transport in spintronic devices requires an atomistic first principles approach that can handle nonlinear and nonequilibrium transport conditions. We have developed an approach for this purpose based on real space density functional theory (DFT) carried out within the Keldysh nonequilibrium Green's function formalism (NEGF). We report theoretical analysis of nonlinear and nonequilibrium spin injection and quantum transport in Fe/MgO/Fe trilayer structures as a function of external bias voltage. Devices with well relaxed atomic structures and with FeO oxidization layers are investigated as a function of external bias voltage. We also report calculations of nonequilibrium spin injection into molecular layers and graphene. Comparisons to experimental data will be presented. Work in collaborations with: Derek Waldron, Vladimir Timochevski (McGill University); Ke Xia (Institute of Physics, Chinese Academy of Science, Beijing, China); Eric Zhu, Jian Wang (University of Hong Kong); Paul Haney, and Allan MacDonald (University of Texas at Austin).

Spin-polarized current injection induced magnetic reconstruction at oxide interface

DOE PAGES

Fang, F.; Yin, Y. W.; Li, Qi; ...

2017-01-04

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO 3/La 0.5Ca 0.5MnO 3/La 0.7Sr 0.3MnO 3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition ofmore » the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. As a result, the effect is robust and may serve as a viable route for electronic and spintronic applications.« less

Spin-injection optical pumping of molten cesium salt and its NMR diagnosis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishikawa, Kiyoshi

2015-07-15

Nuclear spin polarization of cesium ions in the salt was enhanced during optical pumping of cesium vapor at high magnetic field. Significant motional narrowing and frequency shift of NMR signals were observed by intense laser heating of the salt. When the hyperpolarized salt was cooled by blocking the heating laser, the signal width and frequency changed during cooling and presented the phase transition from liquid to solid. Hence, we find that the signal enhancement is mostly due to the molten salt and nuclear spin polarization is injected into the salt efficiently in the liquid phase. We also show that opticalmore » pumping similarly induces line narrowing in the solid phase. The use of powdered salt provided an increase in effective surface area and signal amplitude without glass wool in the glass cells.« less

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

NASA Astrophysics Data System (ADS)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Dynamic spin injection into a quantum well coupled to a spin-split bound state

NASA Astrophysics Data System (ADS)

Maslova, N. S.; Rozhansky, I. V.; Mantsevich, V. N.; Arseyev, P. I.; Averkiev, N. S.; Lähderanta, E.

2018-05-01

We present a theoretical analysis of dynamic spin injection due to spin-dependent tunneling between a quantum well (QW) and a bound state split in spin projection due to an exchange interaction or external magnetic field. We focus on the impact of Coulomb correlations at the bound state on spin polarization and sheet density kinetics of the charge carriers in the QW. The theoretical approach is based on kinetic equations for the electron occupation numbers taking into account high order correlation functions for the bound state electrons. It is shown that the on-site Coulomb repulsion leads to an enhanced dynamic spin polarization of the electrons in the QW and a delay in the carriers tunneling into the bound state. The interplay of these two effects leads to nontrivial dependence of the spin polarization degree, which can be probed experimentally using time-resolved photoluminescence experiments. It is demonstrated that the influence of the Coulomb interactions can be controlled by adjusting the relaxation rates. These findings open a new way of studying the Hubbard-like electron interactions experimentally.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves

NASA Astrophysics Data System (ADS)

Anugrah, Yoska; Hu, Jiaxi; Stecklein, Gordon; Crowell, Paul A.; Koester, Steven J.

2018-01-01

Graphene is an ideal material for spintronic devices due to its low spin-orbit coupling and high mobility. One of the most important potential applications of graphene spintronics is for use in neuromorphic computing systems, where the tunable spin resistance of graphene can be used to apply analog weighting factors. A key capability needed to achieve spin-based neuromorphic computing systems is to achieve distinct regions of control, where injected and detected spin currents can be tuned independently. Here, we demonstrate the ability to achieve such independent control using a graphene spin valve geometry where the injector and detector regions are modulated by two separate bottom gate electrodes. The spin transport parameters and their dependence on each gate voltage are extracted from Hanle precession measurements. From this analysis, local spin transport parameters and their dependence on the local gate voltage are found, which provide a basis for a spatially-resolved spin resistance network that simulates the device. The data and model are used to calculate the spin currents flowing into, through, and out of the graphene channel. We show that the spin current flowing through the graphene channel can be modulated by 30% using one gate and that the spin current absorbed by the detector can be modulated by 50% using the other gate. This result demonstrates that spin currents can be controlled by locally tuning the spin resistance of graphene. The integration of chemical vapor deposition (CVD) grown graphene with local gates allows for the implementation of large-scale integrated spin-based circuits.

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

PubMed Central

Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

2014-01-01

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures

NASA Astrophysics Data System (ADS)

Zube, Christian; Malindretos, Joerg; Watschke, Lars; Zamani, Reza R.; Disterheft, David; Ulbrich, Rainer G.; Rizzi, Angela; Iza, Michael; Keller, Stacia; DenBaars, Steven P.

2018-01-01

Ferromagnetic MnGa(111) layers were grown on GaN(0001) by molecular beam epitaxy. MnGa/GaN Schottky diodes with a doping level of around n = 7 × 1018 cm-3 were fabricated to achieve single step tunneling across the metal/semiconductor junction. Below the GaN layer, a thin InGaN quantum well served as optical spin detector ("spin-LED"). For electron spin injection from MnGa into GaN and subsequent spin transport through a 45 nm (70 nm) thick GaN layer, we observe a circular polarization of 0.3% (0.2%) in the electroluminescence at 80 K. Interface mixing, spin polarization losses during electrical transport in the GaN layer, and spin relaxation in the InGaN quantum well are discussed in relation with the low value of the optically detected spin polarization.

Low-Resistance Spin Injection into Silicon Using Graphene Tunnel Barriers

DTIC Science & Technology

2012-11-01

compromise spin injection/transport/detection. Ferromagnetic metals readily form silicides even at room tempera- ture19, and diffusion of the ferromagnetic... metal /tunnel barrier/Si contacts using 2 nm SiO2 (triangles), 1.5 nm Al2O3 (diamond) and monolayer graphene (circles) tunnel barriers prepared from...and B. T. Jonker* Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore’s law. Ferromagnetic metals are ideal

Electrical spin injection and detection in molybdenum disulfide multilayer channel

PubMed Central

Liang, Shiheng; Yang, Huaiwen; Renucci, Pierre; Tao, Bingshan; Laczkowski, Piotr; Mc-Murtry, Stefan; Wang, Gang; Marie, Xavier; George, Jean-Marie; Petit-Watelot, Sébastien; Djeffal, Abdelhak; Mangin, Stéphane; Jaffrès, Henri; Lu, Yuan

2017-01-01

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2 channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2 semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2 channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides. PMID:28387252

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

NASA Astrophysics Data System (ADS)

Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

2018-06-01

We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

Magnetic tunnel spin injectors for spintronics

NASA Astrophysics Data System (ADS)

Wang, Roger

Research in spin-based electronics, or "spintronics", has a universal goal to develop applications for electron spin in a broad range of electronics and strives to produce low power nanoscale devices. Spin injection into semiconductors is an important initial step in the development of spintronic devices, with the goal to create a highly spin polarized population of electrons inside a semiconductor at room temperature for study, characterization, and manipulation. This dissertation investigates magnetic tunnel spin injectors that aim to meet the spin injection requirements needed for potential spintronic devices. Magnetism and spin are inherently related, and chapter 1 provides an introduction on magnetic tunneling and spintronics. Chapter 2 then describes the fabrication of the spin injector structures studied in this dissertation, and also illustrates the optical spin detection technique that correlates the measured electroluminescence polarization from quantum wells to the electron spin polarization inside the semiconductor. Chapter 3 reports the spin injection from the magnetic tunnel transistor (MTT) spin injector, which is capable of producing highly spin polarized tunneling currents by spin selective scattering in its multilayer structure. The MTT achieves ˜10% lower bound injected spin polarization in GaAs at 1.4 K. Chapter 4 reports the spin injection from CoFe-MgO(100) tunnel spin injectors, where spin dependent tunneling through MgO(100) produces highly spin polarized tunneling currents. These structures achieve lower bound spin polarizations exceeding 50% at 100 K and 30% in GaAs at 290 K. The CoFe-MgO spin injectors also demonstrate excellent thermal stability, maintaining high injection efficiencies even after exposure to temperatures of up to 400 C. Bias voltage and temperature dependent studies on these structures indicate a significant dependence of the electroluminescence polarization on the spin and carrier recombination lifetimes inside the

New pathways towards efficient metallic spin Hall spintronics

DOE PAGES

Jungfleisch, Matthias Benjamin; Zhang, Wei; Jiang, Wanjun; ...

2015-11-16

Spin Hall effects (SHEs) interconvert spin- and charge currents due to spin- orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here, we review recent experimental efforts exploring efficient spin Hall detector materials as well as new approaches to drive collective magnetization dynamics and to manipulate spin textures by SHEs. As a result, these studies are also expected to impact practical spintronics applications beyond their significance in fundamental research.

Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

PubMed

Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

2018-04-24

Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

Pure spin current injection in hydrogenated graphene structures

NASA Astrophysics Data System (ADS)

Zapata-Peña, Reinaldo; Mendoza, Bernardo S.; Shkrebtii, Anatoli I.

2017-11-01

We present a theoretical study of spin-velocity injection (SVI) of a pure spin current (PSC) induced by linearly polarized light that impinges normally on the surface of two 50% hydrogenated noncentrosymmetric two-dimensional (2D) graphene structures. The first structure, labeled Up and also known as graphone, is hydrogenated only on one side, and the second, labeled Alt, is 25% hydrogenated at both sides. The hydrogenation opens an energy gap on both structures. The PSC formalism has been developed in the length gauge perturbing Hamiltonian, and includes, through the single-particle density matrix, the excited coherent superposition of the spin-split conduction bands inherent to the noncentrosymmetric nature of the structures considered in this work. We analyze two possibilities: in the first, the spin is fixed along a chosen direction, and the resulting SVI is calculated; in the second, we choose the SVI direction along the surface plane, and calculate the resulting spin orientation. This is done by changing the energy ℏ ω and polarization angle α of the incoming light. The results are calculated within a full electronic band structure scheme using the density functional theory (DFT) in the local density approximation (LDA). The maxima of the spin velocities are reached when ℏ ω =0.084 eV and α =35∘ for the Up structure, and ℏ ω =0.720 eV and α =150∘ for the Alt geometry. We find a speed of 668 and 645 km/s for the Up and the Alt structures, respectively, when the spin points perpendicularly to the surface. Also, the response is maximized by fixing the spin-velocity direction along a high-symmetry axis, obtaining a speed of 688 km/s with the spin pointing at 13∘ from the surface normal, for the Up, and 906 km/s and the spin pointing at 60∘ from the surface normal, for the Alt system. These speed values are orders of magnitude larger than those of bulk semiconductors, such as CdSe and GaAs, thus making the hydrogenated graphene structures

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6

PubMed Central

Song, Qi; Mi, Jian; Zhao, Dan; Su, Tang; Yuan, Wei; Xing, Wenyu; Chen, Yangyang; Wang, Tianyu; Wu, Tao; Chen, Xian Hui; Xie, X. C.; Zhang, Chi; Shi, Jing; Han, Wei

2016-01-01

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6. PMID:27834378

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB 6

DOE PAGES

Song, Qi; Mi, Jian; Zhao, Dan; ...

2016-11-11

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observemore » the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB 6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Moreover, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6.« less

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

PubMed

Yu, T; Wu, M W

2015-07-01

The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

High efficiency spin-valve and spin-filter in a doped rhombic graphene quantum dot device

NASA Astrophysics Data System (ADS)

Silva, P. V.; Saraiva-Souza, A.; Maia, D. W.; Souza, F. M.; Filho, A. G. Souza; Meunier, V.; Girão, E. C.

2018-04-01

Spin-polarized transport through a rhombic graphene quantum dot (rGQD) attached to armchair graphene nanoribbon (AGNR) electrodes is investigated by means of the Green's function technique combined with single-band tight-binding (TB) approach including a Hubbard-like term. The Hubbard repulsion was included within the mean-field approximation. Compared to anti-ferromagnetic (AFM), we show that the ferromagnetic (FM) ordering of the rGQD corresponds to a smaller bandgap, thus resulting in an efficient spin injector. As a consequence, the electron transport spectrum reveals a spin valve effect, which is controlled by doping with B/N atoms creating a p-n-type junction. The calculations point out that such systems can be used as spin-filter devices with efficiency close to a 100 % .

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

NASA Astrophysics Data System (ADS)

Bhardwaj, Ravindra G.; Lou, Paul C.; Kumar, Sandeep

2018-01-01

The development of spintronics and spin-caloritronics devices needs efficient generation, detection, and manipulation of spin current. The thermal spin current from the spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. However, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without a heavy metal spin detector. p-Si, having a centrosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling, leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for the detection of spin-Seebeck effects, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to the Ni80Fe20 layer due to the thermal spin galvanic effect and the spin-Hall effect, causing spin-orbit torques. The thermal spin-orbit torques lead to collapse of magnetic hysteresis of the 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

Enhanced efficiency of internal combustion engines by employing spinning gas.

PubMed

Geyko, V I; Fisch, N J

2014-08-01

The efficiency of the internal combustion engine might be enhanced by employing spinning gas. A gas spinning at near sonic velocities has an effectively higher heat capacity, which allows practical fuel cycles, which are far from the Carnot efficiency, to approach more closely the Carnot efficiency. A remarkable gain in fuel efficiency is shown to be theoretically possible for the Otto and Diesel cycles. The use of a flywheel, in principle, could produce even greater increases in efficiency.

Enhanced Efficiency of Internal Combustion Engines By Employing Spinning Gas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geyko, Vasily; Fisch, Nathaniel

2014-02-27

The efficiency of the internal combustion engine might be enhanced by employing spinning gas. A gas spinning at near sonic velocities has an effectively higher heat capacity, which allows practical fuel cycles, which are far from the Carnot efficiency, to approach more closely the Carnot efficiency. A gain in fuel efficiency of several percent is shown to be theoretically possible for the Otto and Diesel cycles. The use of a flywheel, in principle, could produce even greater increases in the efficiency.

Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, June-Young; Park, Byong-Guk, E-mail: bgpark@kaist.ac.kr; Baek, Seung-heon Chris

We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low magnetic field, which is due to the precession of injected spins, and another signal originating from the rotation of the magnetization at a larger magnetic field. In contrast, for a small bias voltage, additional signals appear at a wide range of magnetic fields, which occasionally overwhelms the conventional Hanle signals. Because the additional signals are pronounced atmore » a low bias and are significantly reduced by annealing at moderate temperatures, they can be attributed to multi-step tunneling via defect states at the interfaces or tunnel barrier. Our results demonstrate that the spin injection signal caused by the defect states can be evaluated by its bias voltage dependence.« less

Evidence for spin injection and transport in solution-processed TIPS-pentacene at room temperature

NASA Astrophysics Data System (ADS)

Mooser, S.; Cooper, J. F. K.; Banger, K. K.; Wunderlich, J.; Sirringhaus, H.

2012-10-01

Recently, there has been growing interest in the field of organic spintronics, where the research on organic semiconductors (OSCs) has extended from the complex aspects of charge carrier transport to the study of the spin transport properties of those anisotropic and partly localized systems.1 Furthermore, solution-processed OSCs are not only interesting due to their technological applications, but it has recently been shown in 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin film transistors that they can exhibit a negative temperature coefficient of the mobility due to localized transport limited by thermal lattice fluctuations.2 Here, spin injection and transport in solution-processed TIPS-pentacene are investigated exploiting vertical CoPt/TIPSpentacene/AlOx/Co spin valve architectures.3 The antiparallel magnetization state of the relative orientation of CoPt and Co is achieved due to their different coercive fields. A spin valve effect is detected from T = 175 K up to room temperature, where the resistance of the device is lower for the antiparallel magnetization state. The first observation of the scaling of the magnetoresistance (MR) with the bulk mobility of the OSC as a function of temperature, together with the dependence of the MR on the interlayer thickness, clearly indicates spin injection and transport in TIPS-pentacene. From OSC-spacer thickness-dependent MR measurements, a spin relaxation length of TIPS-pentacene of (24+/-6) nm and a spin relaxation time of approximately 3.5 μs at room temperature are estimated, taking the measured bulk mobility of holes into account.

Enhanced spin pumping into superconductors provides evidence for superconducting pure spin currents

NASA Astrophysics Data System (ADS)

Jeon, Kun-Rok; Ciccarelli, Chiara; Ferguson, Andrew J.; Kurebayashi, Hidekazu; Cohen, Lesley F.; Montiel, Xavier; Eschrig, Matthias; Robinson, Jason W. A.; Blamire, Mark G.

2018-06-01

Unlike conventional spin-singlet Cooper pairs, spin-triplet pairs can carry spin1,2. Triplet supercurrents were discovered in Josephson junctions with metallic ferromagnet spacers, where spin transport can occur only within the ferromagnet and in conjunction with a charge current. Ferromagnetic resonance injects a pure spin current from a precessing ferromagnet into adjacent non-magnetic materials3,4. For spin-singlet pairing, the ferromagnetic resonance spin pumping efficiency decreases below the critical temperature (Tc) of a coupled superconductor5,6. Here we present ferromagnetic resonance experiments in which spin sink layers with strong spin-orbit coupling are added to the superconductor. Our results show that the induced spin currents, rather than being suppressed, are substantially larger in the superconducting state compared with the normal state; although further work is required to establish the details of the spin transport process, we show that this cannot be mediated by quasiparticles and is most likely a triplet pure spin supercurrent.

Excitation of propagating spin waves by pure spin current

NASA Astrophysics Data System (ADS)

Demokritov, Sergej

Recently it was demonstrated that pure spin currents can be utilized to excite coherent magnetization dynamics, which enables development of novel magnetic nano-oscillators. Such oscillators do not require electric current flow through the active magnetic layer, which can help to reduce the Joule power dissipation and electromigration. In addition, this allows one to use insulating magnetic materials and provides an unprecedented geometric flexibility. The pure spin currents can be produced by using the spin-Hall effect (SHE). However, SHE devices have a number of shortcomings. In particular, efficient spin Hall materials exhibit a high resistivity, resulting in the shunting of the driving current through the active magnetic layer and a significant Joule heating. These shortcomings can be eliminated in devices that utilize spin current generated by the nonlocal spin-injection (NLSI) mechanism. Here we review our recent studies of excitation of magnetization dynamics and propagating spin waves by using NLSI. We show that NLSI devices exhibit highly-coherent dynamics resulting in the oscillation linewidth of a few MHz at room temperature. Thanks to the geometrical flexibility of the NLSI oscillators, one can utilize dipolar fields in magnetic nano-patterns to convert current-induced localized oscillations into propagating spin waves. The demonstrated systems exhibit efficient and controllable excitation and directional propagation of coherent spin waves characterized by a large decay length. The obtained results open new perspectives for the future-generation electronics using electron spin degree of freedom for transmission and processing of information on the nanoscale.

Magnetic proximity control of spin currents and giant spin accumulation in graphene

NASA Astrophysics Data System (ADS)

Singh, Simranjeet

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena. We will present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to the ferromagnetic-insulator (FMI) magnetization in graphene/FMI heterostructures. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. We also discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. Additionally, it has been a challenge to grow a smooth, robust and pin-hole free tunnel barriers on graphene, which can withstand large current densities for efficient electrical spin injection. We have experimentally demonstrated giant spin accumulation in graphene lateral spin valves employing SrO tunnel barriers. Nonlocal spin signals, as large as 2 mV, are observed in graphene lateral spin valves at room temperature. This high spin accumulations observed using SrO tunnel barriers puts graphene on the roadmap for exploring the possibility of achieving a non-local magnetization switching due to the spin torque from electrically injected spins. Financial support from ONR (No. N00014-14-1-0350), NSF (No. DMR-1310661), and C-SPIN, one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.

Spin torque efficiency of Ta, W, and Pt in metallic bilayers evaluated by harmonic Hall and spin Hall magnetoresistance measurements

NASA Astrophysics Data System (ADS)

Lau, Yong-Chang; Hayashi, Masamitsu

2017-08-01

We investigate the efficiency of current-induced torque, i.e., the spin torque efficiency, in in-plane magnetized heavy metal/CoFeB/MgO heterostructures (heavy metals = Pt, W, and Ta) using the harmonic Hall technique and the spin Hall magnetoresistance. We find that the amplitude of the external magnetic field has a strong influence on the spin torque efficiency evaluation by the harmonic Hall measurements. This can be corrected by measuring the corresponding Hall resistance susceptibility. The sign and magnitude of the resulting Slonczewski-like spin torque efficiencies are in agreement with previous reports and the measurements utilizing the spin Hall magnetoresistance, except for the Pt underlayer films. The origin of the discrepancy for the Pt underlayer films is unclear. The field like torque efficiencies, upon subtracting the Oersted field contribution, are quite low or negligible. This is in significant contrast to what has been found for the field like torque in heterostructures with perpendicular magnetization. These results suggest that a more advanced model is required in order to describe accurately spin transport and momentum transfer at metallic interfaces.

Spin-Based Devices for Magneto-Optoelectronic Integrated Circuits

DTIC Science & Technology

2009-04-29

bulk material and matches that in quantum wells. While these simple linear relationships hold for spin-polarized light-emitting diodes (spin-LEDs...temperature. The quantum efficiency and hence r| increases with decreasing temperature. The individual circuit elements, 33 therefore, exhibit the...Injection, Threshold Reduction and Output Circular Polarization Modulation in Quantum Well and Quantum Dot Semiconductor Spin Polarized Lasers working

Electrical spin injection from CoFe2O4 into p-Si semiconductor across MgO tunnel barrier for spin electronics

NASA Astrophysics Data System (ADS)

Panda, J.; Maji, Nilay; Nath, T. K.

2017-05-01

The room temperature spin injection and detection in non magnetic p-Si semiconductor have been studied in details in our CoFe2O4 (CFO)/MgO/p-Si heterojunction. The 3-terminal tunnel contacts have been made on the device for transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The spin accumulation in non magnetic p-Si semiconductor has been observed at different bias current under the applied magnetic field parallel to the film plane in the temperature range of 40-300 K. We have observed a giant spin accumulation in p-Si semiconductor using MgO/CFO tunnel contact. The Hanley effect is used to control the reduction of spin accumulation by applying magnetic field perpendicular to the carrier spin in the p-Si. The accumulated spin signal decays as a function of applied magnetic field for fixed bias current. These results will enable utilization of the spin degree of freedom in complementary Si devices and its further development.

Nano-fabricated perpendicular magnetic anisotropy electrodes for lateral spin valves and observation of Nernst-Ettingshausen related signals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chejanovsky, N.; Sharoni, A., E-mail: amos.sharoni@biu.ac.il

2014-08-21

Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano-scaling, these have almost not been studied. This is mainly due to difficulties in fabricating PMA FMs in a lateral geometry. We present here an efficient method, based on ion-milling through an AlN mask, for fabrication of LSVs with multi-layered PMA FMs such as Co/Pd and Co/Ni. We demonstrate, using standard permalloy FMs, that the method enables efficient spin injection.more » We show the multi-layer electrodes retain their PMA properties as well as spin injection and detection in PMA LSVs. In addition, we find a large asymmetric voltage signal which increases with current. We attribute this to a Nernst-Ettingshausen effect caused by local Joule heating and the perpendicular magnetic easy axis.« less

Non-equilibrium tunneling in zigzag graphene nanoribbon break-junction results in spin filtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Liming; Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville 3010; National ICT Australia, The University of Melbourne, Parkville 3010

Spintronic devices promise new faster and lower energy-consumption electronic systems. Graphene, a versatile material and candidate for next generation electronics, is known to possess interesting spintronic properties. In this paper, by utilizing density functional theory and non-equilibrium green function formalism, we show that Fano resonance can be generated by introducing a break junction in a zigzag graphene nanoribbon (ZGNR). Using this effect, we propose a new spin filtering device that can be used for spin injection. Our theoretical results indicate that the proposed device could achieve high spin filtering efficiency (over 90%) at practical fabrication geometries. Furthermore, our results indicatemore » that the ZGNR break junction lattice configuration can dramatically affect spin filtering efficiency and thus needs to be considered when fabricating real devices. Our device can be fabricated on top of spin transport channel and provides good integration between spin injection and spin transport.« less

Spin-transfer torque induced spin waves in antiferromagnetic insulators

DOE PAGES

Daniels, Matthew W.; Guo, Wei; Stocks, George Malcolm; ...

2015-01-01

We explore the possibility of exciting spin waves in insulating antiferromagnetic films by injecting spin current at the surface. We analyze both magnetically compensated and uncompensated interfaces. We find that the spin current induced spin-transfer torque can excite spin waves in insulating antiferromagnetic materials and that the chirality of the excited spin wave is determined by the polarization of the injected spin current. Furthermore, the presence of magnetic surface anisotropy can greatly increase the accessibility of these excitations.

Nonreciprocity of electrically excited thermal spin signals in CoFeAl-Cu-Py lateral spin valves

NASA Astrophysics Data System (ADS)

Hu, Shaojie; Cui, Xiaomin; Nomura, Tatsuya; Min, Tai; Kimura, Takashi

2017-03-01

Electrical and thermal spin currents excited by an electric current have been systematically investigated in lateral spin valves consisting of CoFeAl and Ni80Fe20 (Py) wires bridged by a Cu strip. In the electrical spin signal, the reciprocity between the current and voltage probes was clearly confirmed. However, a significant nonreciprocity was observed in the thermal spin signal. This provides clear evidence that a large spin-dependent Seebeck coefficient is more important than the spin polarization for efficient thermal spin injection and detection. We demonstrate that the spin-dependent Seebeck coefficient can be simply evaluated from the thermal spin signals for two configurations. Our experimental description paves a way for evaluating a small spin-dependent Seebeck coefficient for conventional ferromagnets without using complicated parameters.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

NASA Astrophysics Data System (ADS)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

NASA Astrophysics Data System (ADS)

Cornelissen, L. J.; Liu, J.; van Wees, B. J.; Duine, R. A.

2018-03-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6 %/mA at T =250 K . Finite element modeling shows that this could be increased to well above 10 %/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor.

PubMed

Cornelissen, L J; Liu, J; van Wees, B J; Duine, R A

2018-03-02

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6%/mA at T=250  K. Finite element modeling shows that this could be increased to well above 10%/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Optimization of the multi-turn injection efficiency for a medical synchrotron

NASA Astrophysics Data System (ADS)

Kim, J.; Yoon, M.; Yim, H.

2016-09-01

We present a method for optimizing the multi-turn injection efficiency for a medical synchrotron. We show that for a given injection energy, the injection efficiency can be greatly enhanced by choosing transverse tunes appropriately and by optimizing the injection bump and the number of turns required for beam injection. We verify our study by applying the method to the Korea Heavy Ion Medical Accelerator (KHIMA) synchrotron which is currently being built at the campus of Dongnam Institute of Radiological and Medical Sciences (DIRAMS) in Busan, Korea. First the frequency map analysis was performed with the help of the ELEGANT and the ACCSIM codes. The tunes that yielded good injection efficiency were then selected. With these tunes, the injection bump and the number of turns required for injection were then optimized by tracking a number of particles for up to one thousand turns after injection, beyond which no further beam loss occurred. Results for the optimization of the injection efficiency for proton ions are presented.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

PubMed

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Spin-neurons: A possible path to energy-efficient neuromorphic computers

NASA Astrophysics Data System (ADS)

Sharad, Mrigank; Fan, Deliang; Roy, Kaushik

2013-12-01

Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work, we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage, and high-speed magnetization switching in nano-scale magnetic devices. Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and "thresholding" operation of an artificial neuron with high energy-efficiency. Comparison with CMOS-based analog circuit-model of a neuron shows that "spin-neurons" (spin based circuit model of neurons) can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin-neurons can therefore be an attractive option for neuromorphic computers of future.

Critical current and linewidth reduction in spin-torque nano-oscillators by delayed self-injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khalsa, Guru, E-mail: guru.khalsa@nist.gov; Stiles, M. D.; Grollier, J.

2015-06-15

Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel junctions show that with reasonable parameters this approach can decrease critical currents as much as 25% and linewidths by a factor of 4. Analytical calculations, which agree well with simulations, demonstrate that these results can be generalized to any kind of spin-torque oscillator.

Spin-dependent transport behavior in C{sub 60} and Alq{sub 3} based spin valves with a magnetite electrode (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xianmin, E-mail: xmzhang@wpi-aimr.tohoku.ac.jp; Mizukami, Shigemi; Ma, Qinli

2014-05-07

The spin-dependent transport behavior in organic semiconductors (OSs) is generally observed at low temperatures, which likely results from poor spin injection efficiency at room temperature from the ferromagnetic metal electrodes to the OS layer. Possible reasons for this are the low Curie temperature and/or the small spin polarization efficiency for the ferromagnetic electrodes used in these devices. Magnetite has potential as an advanced candidate for use as the electrode in spintronic devices, because it can achieve 100% spin polarization efficiency in theory, and has a high Curie temperature (850 K). Here, we fabricated two types of organic spin valves using magnetitemore » as a high efficiency electrode. C{sub 60} and 8-hydroxyquinoline aluminum (Alq{sub 3}) were employed as the OS layers. Magnetoresistance ratios of around 8% and over 6% were obtained in C{sub 60} and Alq{sub 3}-based spin valves at room temperature, respectively, which are two of the highest magnetoresistance ratios in organic spin valves reported thus far. The magnetoresistance effect was systemically investigated by varying the thickness of the Alq{sub 3} layer. Moreover, the temperature dependence of the magnetoresistance ratios for C{sub 60} and Alq{sub 3}-based spin valves were evaluated to gain insight into the spin-dependent transport behavior. This study provides a useful method in designing organic spin devices operated at room temperature.« less

Nonlinear spin current generation in noncentrosymmetric spin-orbit coupled systems

NASA Astrophysics Data System (ADS)

Hamamoto, Keita; Ezawa, Motohiko; Kim, Kun Woo; Morimoto, Takahiro; Nagaosa, Naoto

2017-06-01

Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and has been studied actively. For example, representative methods of spin-current generation include spin-polarized current injections from ferromagnetic metals, the spin Hall effect, and the spin battery. Here, we theoretically propose a mechanism of spin-current generation based on nonlinear phenomena. By using Boltzmann transport theory, we show that a simple application of the electric field E induces spin current proportional to E2 in noncentrosymmetric spin-orbit coupled systems. We demonstrate that the nonlinear spin current of the proposed mechanism is supported in the surface state of three-dimensional topological insulators and two-dimensional semiconductors with the Rashba and/or Dresselhaus interaction. In the latter case, the angular dependence of the nonlinear spin current can be manipulated by the direction of the electric field and by the ratio of the Rashba and Dresselhaus interactions. We find that the magnitude of the spin current largely exceeds those in the previous methods for a reasonable magnitude of the electric field. Furthermore, we show that application of ac electric fields (e.g., terahertz light) leads to the rectifying effect of the spin current, where dc spin current is generated. These findings will pave a route to manipulate the spin current in noncentrosymmetric crystals.

Efficient spin filter and spin valve in a single-molecule magnet Fe{sub 4} between two graphene electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zu, Feng-Xia; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074; Gao, Guo-Ying

2015-12-21

We propose a magnetic molecular junction consisting of a single-molecule magnet Fe{sub 4} connected two graphene electrodes and investigate transport properties, using the nonequilibrium Green's function method in combination with spin-polarized density-functional theory. The results show that the device can be used as a nearly perfect spin filter with efficiency approaching 100%. Our calculations provide crucial microscopic information how the four iron cores of the chemical structure are responsible for the spin-resolved transmissions. Moreover, it is also found that the device behaves as a highly efficient spin valve, which is an excellent candidate for spintronics of molecular devices. The ideamore » of combining single-molecule magnets with graphene provides a direction in designing a new class of molecular spintronic devices.« less

Spin-neurons: A possible path to energy-efficient neuromorphic computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharad, Mrigank; Fan, Deliang; Roy, Kaushik

Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work, we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage, and high-speed magnetization switching in nano-scale magnetic devices.more » Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and “thresholding” operation of an artificial neuron with high energy-efficiency. Comparison with CMOS-based analog circuit-model of a neuron shows that “spin-neurons” (spin based circuit model of neurons) can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin-neurons can therefore be an attractive option for neuromorphic computers of future.« less

Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1998-01-01

Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

Spin power and efficiency in an Aharnov-Bohm ring with an embedded magnetic impurity quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Xi; Guo, Yong, E-mail: guoy66@tsinghua.edu.cn; Collaborative Innovation Center of Quantum Matter, Beijing

2015-05-11

Spin thermoelectric effects in an Aharnov-Bohm ring with a magnetic impurity quantum dot (QD) are theoretically investigated by using the nonequilibrium Green's function method. It is found that due to the exchange coupling between the impurity and the electrons in QD, spin output power, and efficiency can be significant and be further modulated by the gate voltage. The spin thermoelectric effect can be modulated effectively by adjusting the Rashba spin-orbit interaction (RSOI) and the magnetic flux. The spin power and efficiency show zigzag oscillations, and thus spin thermoelectric effect can be switched by adjusting the magnetic flux phase factor andmore » RSOI ones. In addition, the spin efficiency can be significantly enhanced by the coexistence of the RSOI and the magnetic flux, and the maximal value of normalized spin efficiency η{sub max}/η{sub C} = 0.35 is obtained. Our results show that such a QD ring device may be used as a manipulative spin thermoelectric generator.« less

Efficient optical injection locking of electronic oscillators

NASA Astrophysics Data System (ADS)

Cochran, S. R.; Wang, S. Y.

1989-05-01

The paper presents techniques for direct optical injection locking of electronic oscillators and analyzes the problem of direct optical injection locking of a common-source FET oscillator using a high impedance optoelectronic transducer. A figure-of-merit for optically injection locked oscillators is defined, and an experimental oscillator based on the design criteria was fabricated. The oscillator achieved efficient, high power operation and moderate locking bandwidth with small locking signal magnitude. The experimental results are consistent with the theoretical model.

Assistive Device for Efficient Intravitreal Injections.

PubMed

Ullrich, Franziska; Michels, Stephan; Lehmann, Daniel; Pieters, Roel S; Becker, Matthias; Nelson, Bradley J

2016-08-01

Intravitreal therapy is the most common treatment for many chronic ophthalmic diseases, such as age-related macular degeneration. Due to the increasing worldwide demand for intravitreal injections, there exists a need to render this medical procedure more time- and cost-efficient while increasing patient safety. The authors propose a medical assistive device that injects medication intravitreally. Compared to the manual intravitreal injection procedure, an automated device has the potential to increase safety for patients, decrease procedure times, allow for integrated data storage and documentation, and reduce costs for medical staff and expensive operating rooms. This work demonstrates the development of an assistive injection system that is coarsely positioned over the patient's head by the human operator, followed by automatic fine positioning and intravitreal injection through the pars plana. Several safety features, such as continuous eye tracking and iris recognition, have been implemented. The functioning system is demonstrated through ex vivo experiments with porcine eyes. [Ophthalmic Surg Lasers Imaging Retina. 2016;47:752-762.]. Copyright 2016, SLACK Incorporated.

Thermoelectric spin voltage in graphene

NASA Astrophysics Data System (ADS)

Sierra, Juan F.; Neumann, Ingmar; Cuppens, Jo; Raes, Bart; Costache, Marius V.; Valenzuela, Sergio O.

2018-02-01

In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents1,2. Amongst the most intriguing phenomena is the spin Seebeck effect3-5, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect6-8. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport9-11, energy-dependent carrier mobility and unique density of states12,13. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current14-17. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias.

Bias Dependence of the Electrical Spin Injection into GaAs from Co -Fe -B /MgO Injectors with Different MgO Growth Processes

NASA Astrophysics Data System (ADS)

Barate, P.; Liang, S. H.; Zhang, T. T.; Frougier, J.; Xu, B.; Schieffer, P.; Vidal, M.; Jaffrès, H.; Lépine, B.; Tricot, S.; Cadiz, F.; Garandel, T.; George, J. M.; Amand, T.; Devaux, X.; Hehn, M.; Mangin, S.; Tao, B.; Han, X. F.; Wang, Z. G.; Marie, X.; Lu, Y.; Renucci, P.

2017-11-01

We investigate the influence of the MgO growth process on the bias dependence of the electrical spin injection from a Co -Fe -B /MgO spin injector into a GaAs-based light-emitting diode (spin LED). With this aim, textured MgO tunnel barriers are fabricated either by sputtering or molecular-beam-epitaxy (MBE) methods. For the given growth parameters used for the two techniques, we observe that the circular polarization of the electroluminescence emitted by spin LEDs is rather stable as a function of the injected current or applied bias for the samples with sputtered tunnel barriers, whereas the corresponding circular polarization decreases abruptly for tunnel barriers grown by MBE. We attribute these different behaviors to the different kinetic energies of the injected carriers linked to differing amplitudes of the parasitic hole current flowing from GaAs to Co-Fe-B in both cases.

SIMULATIONS OF BOOSTER INJECTION EFFICIENCY FOR THE APS-UPGRADE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calvey, J.; Borland, M.; Harkay, K.

2017-06-25

The APS-Upgrade will require the injector chain to provide high single bunch charge for swap-out injection. One possible limiting factor to achieving this is an observed reduction of injection efficiency into the booster synchrotron at high charge. We have simulated booster injection using the particle tracking code elegant, including a model for the booster impedance and beam loading in the RF cavities. The simulations point to two possible causes for reduced efficiency: energy oscillations leading to losses at high dispersion locations, and a vertical beam size blowup caused by ions in the Particle Accumulator Ring. We also show that themore » efficiency is much higher in an alternate booster lattice with smaller vertical beta function and zero dispersion in the straight sections.« less

Increase in Spin Injection Efficiency of a CoFe/MgO (100) Tunnel Spin Injector with Thermal Annealing

DTIC Science & Technology

2005-01-24

geometry, the optical selection rules provide a direct correlation between the EL polarization and the spin polarization of the electrons just prior...Holland, Amsterdam, 1984d. 18M. Gurioli, A. Vinattieri, M. Colocci, C. Deparis, J. Massies, G. Neu, A. Bosacchi, and S. Franchi , Phys. Rev. B 44, 3115

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

PubMed Central

Park, Tae-Eon; Park, Youn Ho; Lee, Jong-Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung-Chul; Kim, Hyung-jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon

2017-01-01

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems. PMID:28569767

Graphene-diamond interface: Gap opening and electronic spin injection

NASA Astrophysics Data System (ADS)

Ma, Yandong; Dai, Ying; Guo, Meng; Huang, Baibiao

2012-06-01

Creating a finite band gap, injecting electronic spin, and finding a suitable substrate are the three important challenges for building graphene-based devices. Here, first-principles calculations are performed to investigate the electronic and magnetic properties of graphene adsorbed on the (111) surface of diamond, which is synthesized experimentally [Nature10.1038/nature09979 472, 74 (2011); J. Appl. Phys.10.1063/1.3627370 110, 044324 (2011); Nano Lett.10.1021/nl204545q 12, 1603 (2012); ACS Nano10.1021/nn204362p 6, 1018 (2012)]. Our results reveal that the graphene adsorbed on the diamond surface is a semiconductor with a finite gap depending on the adsorption arrangements due to the variation of on-site energy induced by the diamond surface, with the extra advantage of maintaining main characters of the linear band dispersion of graphene. More interestingly, different from typical graphene/semiconductor hybrid systems, we find that electronic spin can arise ``intrinsically'' in graphene owing to the exchange proximity interaction between electrons in graphene and localized electrons in the diamond surface rather than the characteristic graphene states. These predications strongly revive this new synthesized system as a viable candidate to overcome all the aforementioned challenges, providing an ideal platform for future graphene-based electronics.

Current-induced modulation of backward spin-waves in metallic microstructures

NASA Astrophysics Data System (ADS)

Sato, Nana; Lee, Seo-Won; Lee, Kyung-Jin; Sekiguchi, Koji

2017-03-01

We performed a propagating spin-wave spectroscopy for backward spin-waves in ferromagnetic metallic microstructures in the presence of electric-current. Even with the smaller current injection of 5× {{10}10} A m-2 into ferromagnetic microwires, the backward spin-waves exhibit a gigantic 200 MHz frequency shift and a 15% amplitude change, showing 60 times larger modulation compared to previous reports. Systematic experiments by measuring dependences on a film thickness of mirowire, on the wave-vector of spin-wave, and on the magnitude of bias field, we revealed that for the backward spin-waves a distribution of internal magnetic field generated by electric-current efficiently modulates the frequency and amplitude of spin-waves. The gigantic frequency and amplitude changes were reproduced by a micromagnetics simulation, predicting that the current-injection of 5× {{10}11} A m-2 allows 3 GHz frequency shift. The effective coupling between electric-current and backward spin-waves has a potential to build up a logic control method which encodes signals into the phase and amplitude of spin-waves. The metallic magnonics cooperating with electronics could suggest highly integrated magnonic circuits both in Boolean and non-Boolean principles.

Validation and Diagnostic Efficiency of the Mini-SPIN in Spanish-Speaking Adolescents.

PubMed

Garcia-Lopez, LuisJoaquín; Moore, Harry T A

2015-01-01

Social Anxiety Disorder (SAD) is one of the most common mental disorders in adolescence. Many validated psychometric tools are available to diagnose individuals with SAD efficaciously. However, there is a demand for shortened self-report instruments that identify adolescents at risk of developing SAD. We validate the Mini-SPIN and its diagnostic efficiency in overcoming this problem in Spanish-speaking adolescents in Spain. The psychometric properties of the 3-item Mini-SPIN scale for adolescents were assessed in a community (study 1) and clinical sample (study 2). Study 1 consisted of 573 adolescents, and found the Mini-SPIN to have appropriate internal consistency and high construct validity. Study 2 consisted of 354 adolescents (147 participants diagnosed with SAD and 207 healthy controls). Data revealed that the Mini-SPIN has good internal consistency, high construct validity and adequate diagnostic efficiency. Our findings suggest that the Mini-SPIN has good psychometric properties on clinical and healthy control adolescents and general population, which indicates that it can be used as a screening tool in Spanish-speaking adolescents. Cut-off scores are provided.

Measuring the labeling efficiency of pseudocontinuous arterial spin labeling.

PubMed

Chen, Zhensen; Zhang, Xingxing; Yuan, Chun; Zhao, Xihai; van Osch, Matthias J P

2017-05-01

Optimization and validation of a sequence for measuring the labeling efficiency of pseudocontinuous arterial spin labeling (pCASL) perfusion MRI. The proposed sequence consists of a labeling module and a single slice Look-Locker echo planar imaging readout. A model-based algorithm was used to calculate labeling efficiency from the signal acquired from the main brain-feeding arteries. Stability of the labeling efficiency measurement was evaluated with regard to the use of cardiac triggering, flow compensation and vein signal suppression. Accuracy of the measurement was assessed by comparing the measured labeling efficiency to mean brain pCASL signal intensity over a wide range of flip angles as applied in the pCASL labeling. Simulations show that the proposed algorithm can effectively calculate labeling efficiency when correcting for T1 relaxation of the blood spins. Use of cardiac triggering and vein signal suppression improved stability of the labeling efficiency measurement, while flow compensation resulted in little improvement. The measured labeling efficiency was found to be linearly (R = 0.973; P < 0.001) related to brain pCASL signal intensity over a wide range of pCASL flip angles. The optimized labeling efficiency sequence provides robust artery-specific labeling efficiency measurement within a short acquisition time (∼30 s), thereby enabling improved accuracy of pCASL CBF quantification. Magn Reson Med 77:1841-1852, 2017. © 2016 International Society for Magnetic Resonance in Medicine Magn Reson Med 77:1841-1852, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Extrinsic Rashba spin-orbit coupling effect on silicene spin polarized field effect transistors

NASA Astrophysics Data System (ADS)

Pournaghavi, Nezhat; Esmaeilzadeh, Mahdi; Abrishamifar, Adib; Ahmadi, Somaieh

2017-04-01

Regarding the spin field effect transistor (spin FET) challenges such as mismatch effect in spin injection and insufficient spin life time, we propose a silicene based device which can be a promising candidate to overcome some of those problems. Using non-equilibrium Green’s function method, we investigate the spin-dependent conductance in a zigzag silicene nanoribbon connected to two magnetized leads which are supposed to be either in parallel or anti-parallel configurations. For both configurations, a controllable spin current can be obtained when the Rashba effect is present; thus, we can have a spin filter device. In addition, for anti-parallel configuration, in the absence of Rashba effect, there is an intrinsic energy gap in the system (OFF-state); while, in the presence of Rashba effect, electrons with flipped spin can pass through the channel and make the ON-state. The current voltage (I-V) characteristics which can be tuned by changing the gate voltage or Rashba strength, are studied. More importantly, reducing the mismatch conductivity as well as energy consumption make the silicene based spin FET more efficient relative to the spin FET based on two-dimensional electron gas proposed by Datta and Das. Also, we show that, at the same conditions, the current and {{I}\\text{on}}/{{I}\\text{off}} ratio of silicene based spin FET are significantly greater than that of the graphene based one.

Efficient production of spin singlets in lattice-confined spinor condensates

NASA Astrophysics Data System (ADS)

Zhao, Lichao; Chen, Zihe; Tang, Tao; Liu, Yingmei

2017-04-01

We present an efficient experimental scheme for a production of spin singlets in an antiferromagnetic spinor condensate confined by a cubic optical lattice. Via two independent detection methods, we demonstrate that about 80 percent of atoms in the lattice-confined spinor condensate can form spin singlets, immediately after the atoms cross a first-order superfluid to Mott-insulator phase transition in a sufficiently low microwave dressing field. We also discuss a good agreement between our data and the mean field theory, and two applications of spin singlets in quantum information science. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

Highly Efficient Spin-Current Operation in a Cu Nano-Ring

NASA Astrophysics Data System (ADS)

Murphy, Benedict A.; Vick, Andrew J.; Samiepour, Marjan; Hirohata, Atsufumi

2016-11-01

An all-metal lateral spin-valve structure has been fabricated with a medial Copper nano-ring to split the diffusive spin-current path. We have demonstrated significant modulation of the non-local signal by the application of a magnetic field gradient across the nano-ring, which is up to 30% more efficient than the conventional Hanle configuration at room temperature. This was achieved by passing a dc current through a current-carrying bar to provide a locally induced Ampère field. We have shown that in this manner a lateral spin-valve gains an additional functionality in the form of three-terminal gate operation for future spintronic logic.

The Enhancement of spin Hall torque efficiency and Reduction of Gilbert damping in spin Hall metal/normal metal/ferromagnetic trilayers

NASA Astrophysics Data System (ADS)

Nguyen, Minh-Hai; Pai, Chi-Feng; Ralph, Daniel C.; Buhrman, Robert A.

2015-03-01

The spin Hall effect (SHE) in ferromagnet/heavy metal bilayer structures has been demonstrated to be a powerful means for producing pure spin currents and for exerting spin-orbit damping-like and field-like torques on the ferromagnetic layer. Large spin Hall (SH) angles have been reported for Pt, beta-Ta and beta-W films and have been utilized to achieve magnetic switching of in-plane and out-of-plane magnetized nanomagnets, spin torque auto-oscillators, and the control of high velocity domain wall motion. For many of the proposed applications of the SHE it is also important to achieve an effective Gilbert damping parameter that is as low as possible. In general the spin orbit torques and the effective damping are predicted to depend directly on the spin-mixing conductance of the SH metal/ferromagnet interface. This opens up the possibility of tuning these properties with the insertion of a very thin layer of another metal between the SH metal and the ferromagnet. Here we will report on experiments with such trilayer structures in which we have observed both a large enhancement of the spin Hall torque efficiency and a significant reduction in the effective Gilbert damping. Our results indicate that there is considerable opportunity to optimize the effectiveness and energy efficiency of the damping-like torque through engineering of such trilayer structures. Supported in part by NSF and Samsung Electronics Corporation.

Long-range mutual synchronization of spin Hall nano-oscillators

NASA Astrophysics Data System (ADS)

Awad, A. A.; Dürrenfeld, P.; Houshang, A.; Dvornik, M.; Iacocca, E.; Dumas, R. K.; Åkerman, J.

2017-03-01

The spin Hall effect in a non-magnetic metal with spin-orbit coupling injects transverse spin currents into adjacent magnetic layers, where the resulting spin transfer torque can drive spin wave auto-oscillations. Such spin Hall nano-oscillators (SHNOs) hold great promise as extremely compact and broadband microwave signal generators and magnonic spin wave injectors. Here we show that SHNOs can also be mutually synchronized with unprecedented efficiency. We demonstrate mutual synchronization of up to nine individual SHNOs, each separated by 300 nm. Through further tailoring of the connection regions we can extend the synchronization range to 4 μm. The mutual synchronization is observed electrically as an increase in the power and coherence of the microwave signal, and confirmed optically using micro-Brillouin light scattering microscopy as two spin wave regions sharing the same spectral content, in agreement with our micromagnetic simulations.

Validation and Diagnostic Efficiency of the Mini-SPIN in Spanish-Speaking Adolescents

PubMed Central

Garcia-Lopez, LuisJoaquín; Moore, Harry T. A.

2015-01-01

Objectives Social Anxiety Disorder (SAD) is one of the most common mental disorders in adolescence. Many validated psychometric tools are available to diagnose individuals with SAD efficaciously. However, there is a demand for shortened self-report instruments that identify adolescents at risk of developing SAD. We validate the Mini-SPIN and its diagnostic efficiency in overcoming this problem in Spanish-speaking adolescents in Spain. Methods The psychometric properties of the 3-item Mini-SPIN scale for adolescents were assessed in a community (study 1) and clinical sample (study 2). Results Study 1 consisted of 573 adolescents, and found the Mini-SPIN to have appropriate internal consistency and high construct validity. Study 2 consisted of 354 adolescents (147 participants diagnosed with SAD and 207 healthy controls). Data revealed that the Mini-SPIN has good internal consistency, high construct validity and adequate diagnostic efficiency. Conclusions Our findings suggest that the Mini-SPIN has good psychometric properties on clinical and healthy control adolescents and general population, which indicates that it can be used as a screening tool in Spanish-speaking adolescents. Cut-off scores are provided. PMID:26317695

Electrical detection of spin transport in Si two-dimensional electron gas systems

NASA Astrophysics Data System (ADS)

Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

2016-09-01

Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

NASA Astrophysics Data System (ADS)

Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

2015-03-01

We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

Stable Organic Radicals as Hole Injection Dopants for Efficient Optoelectronics.

PubMed

Bin, Zhengyang; Guo, Haoqing; Liu, Ziyang; Li, Feng; Duan, Lian

2018-02-07

Precursors of reactive organic radicals have been widely used as n-dopants in electron-transporting materials to improve electron conductivity and enhance electron injection. However, the utilization of organic radicals in hole counterparts has been ignored. In this work, stable organic radicals have been proved for the first time to be efficient dopants to enhance hole injection. From the absorbance spectra and the ultraviolet photoelectron spectra, we could observe an efficient electron transfer between the organic radical, (4-N-carbazolyl-2,6-dichlorophenyl)bis(2,4,6-trichlorophenyl)methyl (TTM-1Cz), and the widely used hole injection material, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN). When the unpaired electron of TTM-1Cz is transferred to HAT-CN, it would be oxidized to a TTM-1Cz cation with a newly formed lowest unoccupied molecular orbital which is quite close to the highest occupied molecular orbital (HOMO) of the hole-transporting material (HTM). In this way, the TTM-1Cz cation would promote the electron extraction from the HOMO of the HTM and improve hole injection. Using TTM-1Cz-doped HAT-CN as the hole injection layer, efficient organic light-emitting diodes with extremely low voltages can be attained.

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Spintronics: spin accumulation in mesoscopic systems.

PubMed

Johnson, Mark

2002-04-25

In spintronics, in which use is made of the spin degree of freedom of the electron, issues concerning electrical spin injection and detection of electron spin diffusion are fundamentally important. Jedema et al. describe a magneto-resistance study in which they claim to have observed spin accumulation in a mesoscopic copper wire, but their one-dimensional model ignores two-dimensional spin-diffusion effects, which casts doubt on their analysis. A two-dimensional vector formalism of spin transport is called for to model spin-injection experiments, and the identification of spurious background resistance effects is crucial.

Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

NASA Astrophysics Data System (ADS)

Fischer, M.; Sperlich, A.; Kraus, H.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2018-05-01

We investigate the pump efficiency of silicon-vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in futuremore » optical systems.« less

Efficient micromagnetic modelling of spin-transfer torque and spin-orbit torque

NASA Astrophysics Data System (ADS)

Abert, Claas; Bruckner, Florian; Vogler, Christoph; Suess, Dieter

2018-05-01

While the spin-diffusion model is considered one of the most complete and accurate tools for the description of spin transport and spin torque, its solution in the context of dynamical micromagnetic simulations is numerically expensive. We propose a procedure to retrieve the free parameters of a simple macro-spin like spin-torque model through the spin-diffusion model. In case of spin-transfer torque the simplified model complies with the model of Slonczewski. A similar model can be established for the description of spin-orbit torque. In both cases the spin-diffusion model enables the retrieval of free model parameters from the geometry and the material parameters of the system. Since these parameters usually have to be determined phenomenologically through experiments, the proposed method combines the strength of the diffusion model to resolve material parameters and geometry with the high performance of simple torque models.

Coexistence of perfect spin filtering for entangled electron pairs and high magnetic storage efficiency in one setup.

PubMed

Ji, T T; Bu, N; Chen, F J; Tao, Y C; Wang, J

2016-04-14

For Entangled electron pairs superconducting spintronics, there exist two drawbacks in existing proposals of generating entangled electron pairs. One is that the two kinds of different spin entangled electron pairs mix with each other. And the other is a low efficiency of entanglement production. Herein, we report the spin entanglement state of the ferromagnetic insulator (FI)/s-wave superconductor/FI structure on a narrow quantum spin Hall insulator strip. It is shown that not only the high production of entangled electron pairs in wider energy range, but also the perfect spin filtering of entangled electron pairs in the context of no highly spin-polarized electrons, can be obtained. Moreover, the currents for the left and right leads in the antiferromagnetic alignment both can be zero, indicating 100% tunnelling magnetoresistance with highly magnetic storage efficiency. Therefore, the spin filtering for entangled electron pairs and magnetic storage with high efficiencies coexist in one setup. The results may be experimentally demonstrated by measuring the tunnelling conductance and the noise power.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

NASA Astrophysics Data System (ADS)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

Thermoelectric efficiency enhanced in a quantum dot with polarization leads, spin-flip and external magnetic field

NASA Astrophysics Data System (ADS)

Yao, Hui; Niu, Peng-Bin; Zhang, Chao; Xu, Wei-Ping; Li, Zhi-Jian; Nie, Yi-Hang

2018-03-01

We theoretically study the thermoelectric transport properties in a quantum dot system with two ferromagnetic leads, the spin-flip scattering and the external magnetic field. The results show that the spin polarization of the leads strongly influences thermoelectric coefficients of the device. For the parallel configuration the peak of figure of merit increases with the increase of polarization strength and non-collinear configuration trends to destroy the improvement of figure of merit induced by lead polarization. While the modulation of the spin-flip scattering on the figure of merit is effective only in the absence of external magnetic field or small magnetic field. In terms of improving the thermoelectric efficiency, the external magnetic field plays a more important role than spin-flip scattering. The thermoelectric efficiency can be significantly enhanced by the magnetic field for a given spin-flip scattering strength.

Injection efficiency of bound modes. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Egalon, Claudio Oliveira

1990-01-01

Previous work on efficiency of light injection into the core of a fiber from a thin film and a bulk distribution of sources in the cladding have used the fields of a weakly guiding fiber. This approximation simplifies the analysis of the power efficiency by introducing universal values for the eigenvalues of different fibers with the same V-number, but cannot predict accurately the behavior of the injected light into a fiber with arbitrary differences in indices of refraction. The exact field solution was used in the expressions of the power efficiency, p sub eff, and its behavior as a function of the fiber parameter was analyzed. Weakly guiding results obtained previously are confirmed. However, P sub eff does not always increase with the V-number but with the difference in the indices of refraction, eta sub core-eta sub clad. For the bulk distribution it was found that P sub eff increases with the wavelength, lambda, and decreases with the fiber core radius, a, i.e., it decreases with the V-number. However, for the thin film, the P sub eff remains almost constant with lambda and the fiber core radius.

Proposal for a graphene-based all-spin logic gate

NASA Astrophysics Data System (ADS)

Su, Li; Zhao, Weisheng; Zhang, Yue; Querlioz, Damien; Zhang, Youguang; Klein, Jacques-Olivier; Dollfus, Philippe; Bournel, Arnaud

2015-02-01

In this work, we present a graphene-based all-spin logic gate (G-ASLG) that integrates the functionalities of perpendicular anisotropy magnetic tunnel junctions (p-MTJs) with spin transport in graphene-channel. It provides an ideal integration of logic and memory. The input and output states are defined as the relative magnetization between free layer and fixed layer of p-MTJs. They can be probed by the tunnel magnetoresistance and controlled by spin transfer torque effect. Using lateral non-local spin valve, the spin information is transmitted by the spin-current interaction through graphene channels. By using a physics-based spin current compact model, the operation of G-ASLG is demonstrated and its performance is analyzed. It allows us to evaluate the influence of parameters, such as spin injection efficiency, spin diffusion length, contact area, the device length, and their interdependence, and to optimize the energy and dynamic performance. Compared to other beyond-CMOS solutions, longer spin information transport length (˜μm), higher data throughput, faster computing speed (˜ns), and lower power consumption (˜μA) can be expected from the G-ASLG.

High-efficiency Resonant rf Spin Rotator with Broad Phase Space Acceptance for Pulsed Polarized Cold Neutron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, P. -N.; Barron-Palos, L.; Bowman, J. D.

2008-01-01

High precision fundamental neutron physics experiments have been proposed for the intense pulsed spallation neutron beams at JSNS, LANSCE, and SNS to test the standard model and search for new physics. Certain systematic effects in some of these experiments have to be controlled at the few ppb level. The NPD Gamma experiment, a search for the small parity-violating {gamma}-ray asymmetry A{sub Y} in polarized cold neutron capture on parahydrogen, is one example. For the NPD Gamma experiment we developed a radio-frequency resonant spin rotator to reverse the neutron polarization in a 9.5 cm x 9.5 cm pulsed cold neutron beammore » with high efficiency over a broad cold neutron energy range. The effect of the spin reversal by the rotator on the neutron beam phase space is compared qualitatively to rf neutron spin flippers based on adiabatic fast passage. We discuss the design of the spin rotator and describe two types of transmission-based neutron spin-flip efficiency measurements where the neutron beam was both polarized and analyzed by optically polarized {sup 3}He neutron spin filters. The efficiency of the spin rotator was measured at LANSCE to be 98.8 {+-} 0.5% for neutron energies from 3 to 20 meV over the full phase space of the beam. Systematic effects that the rf spin rotator introduces to the NPD Gamma experiment are considered.« less

On the Efficiency of Particle Injection into the Damping Ring of the Budker Institute of Nuclear Physics

NASA Astrophysics Data System (ADS)

Balakin, V. V.; Vorobev, N. S.; Berkaev, D. V.; Glukhov, S. A.; Gornostaev, P. B.; Dorokhov, V. L.; Chao, Ma Xiao; Meshkov, O. I.; Nikiforov, D. A.; Shashkov, E. V.; Emanov, F. A.; Astrelina, K. V.; Blinov, M. F.; Borin, V. M.

2018-03-01

The efficiency of injection from a linear accelerator into the damping ring of the BINP injection complex has been experimentally studied. The estimations of the injection efficiency are in good agreement with the experimental results. Our method of increasing the capture efficiency can enhance the productivity of the injection complex by a factor of 1.5-2.

All-spinel oxide Josephson junctions for high-efficiency spin filtering.

PubMed

Mesoraca, S; Knudde, S; Leitao, D C; Cardoso, S; Blamire, M G

2018-01-10

Obtaining high efficiency spin filtering at room temperature using spinel ferromagnetic tunnel barriers has been hampered by the formation of antiphase boundaries due to their difference in lattice parameters between barrier and electrodes. In this work we demonstrate the use of LiTi 2 O 4 thin films as electrodes in an all-spinel oxide CoFe 2 O 4 -based spin filter devices. These structures show nearly perfect epitaxy maintained throughout the structure and so minimise the potential for APBs formation. The LiTi 2 O 4 in these devices is superconducting and so measurements at low temperature have been used to explore details of the tunnelling and Josephson junction behaviour.

Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond

NASA Astrophysics Data System (ADS)

Jakobi, I.; Momenzadeh, S. A.; Fávaro de Oliveira, F.; Michl, J.; Ziem, F.; Schreck, M.; Neumann, P.; Denisenko, A.; Wrachtrup, J.

2016-09-01

Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.

Room-Temperature Spin Polariton Diode Laser

NASA Astrophysics Data System (ADS)

Bhattacharya, Aniruddha; Baten, Md Zunaid; Iorsh, Ivan; Frost, Thomas; Kavokin, Alexey; Bhattacharya, Pallab

2017-08-01

A spin-polarized laser offers inherent control of the output circular polarization. We have investigated the output polarization characteristics of a bulk GaN-based microcavity polariton diode laser at room temperature with electrical injection of spin-polarized electrons via a FeCo /MgO spin injector. Polariton laser operation with a spin-polarized current is characterized by a threshold of ˜69 A / cm2 in the light-current characteristics, a significant reduction of the electroluminescence linewidth and blueshift of the emission peak. A degree of output circular polarization of ˜25 % is recorded under remanent magnetization. A second threshold, due to conventional photon lasing, is observed at an injection of ˜7.2 kA /cm2 . The variation of output circular and linear polarization with spin-polarized injection current has been analyzed with the carrier and exciton rate equations and the Gross-Pitaevskii equations for the condensate and there is good agreement between measured and calculated data.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Electronic spin transport in gate-tunable black phosphorus spin valves

NASA Astrophysics Data System (ADS)

Liu, Jiawei; Avsar, Ahmet; Tan, Jun You; Oezyilmaz, Barbaros

High charge mobility, the electric field effect and small spin-orbit coupling make semiconducting black phosphorus (BP) a promising material for spintronics device applications requiring long spin distance spin communication with all rectification and amplification actions. Towards this, we study the all electrical spin injection, transport and detection under non-local spin valve geometry in fully encapsulated ultra-thin BP devices. We observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. These values are an order of magnitude higher than what have been measured in typical graphene spin valve devices. Moreover, the spin transport depends strongly on charge carrier concentration and can be manipulated in a spin transistor-like manner by controlling electric field. This behaviour persists even at room temperature. Finally, we will show that similar to its electrical and optical properties, spin transport property is also strongly anisotropic.

Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

NASA Astrophysics Data System (ADS)

Viglin, N. A.; Ustinov, V. V.; Demokritov, S. O.; Shorikov, A. O.; Bebenin, N. G.; Tsvelikhovskaya, V. M.; Pavlov, T. N.; Patrakov, E. I.

2017-12-01

Electric injection and detection of spin-polarized electrons in InSb semiconductors have been realized in nonlocal experimental geometry using an InSb-based "lateral spin valve." The valve of the InSb /MgO /C o0.9F e0.1 composition has semiconductor/insulator/ferromagnet nanoheterojunctions in which the thickness of the InSb layer considerably exceeded the spin diffusion length of conduction electrons. The spin direction in spin diffusion current has been manipulated by a magnetic field under the Hanle effect conditions. The spin polarization of the electron gas has been registered using ferromagnetic C o0.9F e0.1 probes by measuring electrical potentials arising in the probes in accordance with the Johnson-Silsbee concept of the spin-charge coupling. The developed theory is valid at any degree of degeneracy of electron gas in a semiconductor. The spin relaxation time and spin diffusion length of conduction electrons in InSb have been determined, and the electron-spin polarization in InSb has been evaluated for electrons injected from C o0.9F e0.1 through an MgO tunnel barrier.

Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

NASA Astrophysics Data System (ADS)

Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

2018-04-01

The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

NASA Astrophysics Data System (ADS)

Javadi, Alisa; Ding, Dapeng; Appel, Martin Hayhurst; Mahmoodian, Sahand; Löbl, Matthias Christian; Söllner, Immo; Schott, Rüdiger; Papon, Camille; Pregnolato, Tommaso; Stobbe, Søren; Midolo, Leonardo; Schröder, Tim; Wieck, Andreas Dirk; Ludwig, Arne; Warburton, Richard John; Lodahl, Peter

2018-05-01

The spin of an electron is a promising memory state and qubit. Connecting spin states that are spatially far apart will enable quantum nodes and quantum networks based on the electron spin. Towards this goal, an integrated spin-photon interface would be a major leap forward as it combines the memory capability of a single spin with the efficient transfer of information by photons. Here, we demonstrate such an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared in the ground state with a fidelity of up to 96%. Subsequently, the system is used to implement a single-spin photonic switch, in which the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates, single-photon transistors and the efficient generation of a photonic cluster state.

Spin-Polarized Hybridization at the interface between different 8-hydroxyquinolates and the Cr(001) surface

NASA Astrophysics Data System (ADS)

Wang, Jingying; Deloach, Andrew; Dougherty, Daniel B.; Dougherty Lab Team

Organic materials attract a lot of attention due to their promising applications in spintronic devices. It is realized that spin-polarized metal/organic interfacial hybridization plays an important role to improve efficiency of organic spintronic devices. Hybridized interfacial states help to increase spin injection at the interface. Here we report spin-resolved STM measurements of single tris(8-hydroxyquinolinato) aluminum molecules adsorbed on the antiferromagnetic Cr(001). Our observations show a spin-polarized interface state between Alq3 and Cr(001). Tris(8-hydroxyquinolinato) chromium has also been studied and compared with Alq3, which exhibits different spin-polarized hybridization with the Cr(001) surface state than Alq3. We attribute the differences to different character of molecular orbitals in the two different quinolates.

N-tert-butylmethanimine N-oxide is an efficient spin-trapping probe for EPR analysis of glutathione thiyl radical

PubMed Central

Scott, Melanie J.; Billiar, Timothy R.; Stoyanovsky, Detcho A.

2016-01-01

The electron spin resonance (EPR) spin-trapping technique allows detection of radical species with nanosecond half-lives. This technique is based on the high rates of addition of radicals to nitrones or nitroso compounds (spin traps; STs). The paramagnetic nitroxides (spin-adducts) formed as a result of reactions between STs and radical species are relatively stable compounds whose EPR spectra represent “structural fingerprints” of the parent radical species. Herein we report a novel protocol for the synthesis of N-tert-butylmethanimine N-oxide (EBN), which is the simplest nitrone containing an α-H and a tertiary α′-C atom. We present EPR spin-trapping proof that: (i) EBN is an efficient probe for the analysis of glutathione thiyl radical (GS•); (ii) β-cyclodextrins increase the kinetic stability of the spin-adduct EBN/•SG; and (iii) in aqueous solutions, EBN does not react with superoxide anion radical (O2−•) to form EBN/•OOH to any significant extent. The data presented complement previous studies within the context of synthetic accessibility to EBN and efficient spin-trapping analysis of GS•. PMID:27941944

Efficient coupling of starlight into single mode photonics using Adaptive Injection (AI)

NASA Astrophysics Data System (ADS)

Norris, Barnaby; Cvetojevic, Nick; Gross, Simon; Arriola, Alexander; Tuthill, Peter; Lawrence, Jon; Richards, Samuel; Goodwin, Michael; Zheng, Jessica

2016-08-01

Using single-mode fibres in astronomy enables revolutionary techniques including single-mode interferometry and spectroscopy. However, injection of seeing-limited starlight into single mode photonics is extremely difficult. One solution is Adaptive Injection (AI). The telescope pupil is segmented into a number of smaller subapertures each with size r0, such that seeing can be approximated as a single tip / tilt / piston term for each subaperture, and then injected into a separate fibre via a facet of a segmented MEMS deformable mirror. The injection problem is then reduced to a set of individual tip tilt loops, resulting in high overall coupling efficiency.

Magnetic modulation of inverse spin Hall effect in lateral spin-valves

NASA Astrophysics Data System (ADS)

Andrianov, T.; Vedyaev, A.; Dieny, B.

2018-05-01

We analytically investigated the spin-dependent transport properties in a lateral spin-valve device comprising pinned ferromagnetic electrodes allowing the injection of a spin current in a spin conducting channel where spin orbit scattering takes place. This produces an inverse spin Hall (ISHE) voltage across the thickness of the spin conducting channel. It is shown that by adding an extra soft ferromagnetic electrode with rotatable magnetization along the spin conducting channel, the ISHE generated voltage can be magnetically modulated by changing the magnetization orientation of this additional electrode. The dependence of the ISHE voltage on the direction of magnetization of the ferromagnetic electrode with rotatable magnetization was calculated in various configurations. Our results suggest that such structures could be considered as magnetic field sensors in situations where the total thickness of the sensor is constrained such as in hard disk drive readers.

Toward spin-based Magneto Logic Gate in Graphene

NASA Astrophysics Data System (ADS)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

An efficient method for hybrid density functional calculation with spin-orbit coupling

NASA Astrophysics Data System (ADS)

Wang, Maoyuan; Liu, Gui-Bin; Guo, Hong; Yao, Yugui

2018-03-01

In first-principles calculations, hybrid functional is often used to improve accuracy from local exchange correlation functionals. A drawback is that evaluating the hybrid functional needs significantly more computing effort. When spin-orbit coupling (SOC) is taken into account, the non-collinear spin structure increases computing effort by at least eight times. As a result, hybrid functional calculations with SOC are intractable in most cases. In this paper, we present an approximate solution to this problem by developing an efficient method based on a mixed linear combination of atomic orbital (LCAO) scheme. We demonstrate the power of this method using several examples and we show that the results compare very well with those of direct hybrid functional calculations with SOC, yet the method only requires a computing effort similar to that without SOC. The presented technique provides a good balance between computing efficiency and accuracy, and it can be extended to magnetic materials.

Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

NASA Astrophysics Data System (ADS)

Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

2017-04-01

Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

NASA Astrophysics Data System (ADS)

Avsar, Ahmet; Tan, Jun Y.; Kurpas, Marcin; Gmitra, Martin; Watanabe, Kenji; Taniguchi, Takashi; Fabian, Jaroslav; Özyilmaz, Barbaros

2017-09-01

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a bandgap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of two-dimensional semiconductors could help overcome this basic challenge. In this letter we report an important step towards making two-dimensional semiconductor spin devices. We have fabricated a spin valve based on ultrathin (~5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material, which supports all electrical spin injection, transport, precession and detection up to room temperature. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 μm. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that the Elliott-Yafet spin relaxation mechanism is dominant. We also show that spin transport in ultrathin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect.

Intramyocardial Injection of siRNAs Can Efficiently Establish Myocardial Tissue-Specific Renalase Knockdown Mouse Model.

PubMed

Huang, Kun; Liu, Ju; Zhang, Hui; Wang, Jiliang; Li, Huili

2016-01-01

Ischaemia/reperfusion (I/R) injury will cause additional death of cardiomyocytes in ischaemic heart disease. Recent studies revealed that renalase was involved in the I/R injury. So, the myocardial tissue-specific knockdown mouse models were needed for the investigations of renalase. To establish the mouse models, intramyocardial injection of siRNAs targeting renalase was performed in mice. The wild distribution and high transfection efficiency of the siRNAs were approved. And the renalase expression was efficiently suppressed in myocardial tissue. Compared with the high cost, time consumption, and genetic compensation risk of the Cre/loxP technology, RNA interference (RNAi) technology is much cheaper and less time-consuming. Among the RNAi technologies, injection of siRNAs is safer than virus. And considering the properties of the I/R injury mouse models, the efficiency and durability of injection with siRNAs are acceptable for the studies. Altogether, intramyocardial injection of siRNAs targeting renalase is an economical, safe, and efficient method to establish myocardial tissue-specific renalase knockdown mouse models.

Highly efficient 6-stroke engine cycle with water injection

DOEpatents

Szybist, James P; Conklin, James C

2012-10-23

A six-stroke engine cycle having improved efficiency. Heat is recovered from the engine combustion gases by using a 6-stroke engine cycle in which combustion gases are partially vented proximate the bottom-dead-center position of the fourth stroke cycle, and water is injected proximate the top-dead-center position of the fourth stroke cycle.

Efficient model checking of network authentication protocol based on SPIN

NASA Astrophysics Data System (ADS)

Tan, Zhi-hua; Zhang, Da-fang; Miao, Li; Zhao, Dan

2013-03-01

Model checking is a very useful technique for verifying the network authentication protocols. In order to improve the efficiency of modeling and verification on the protocols with the model checking technology, this paper first proposes a universal formalization description method of the protocol. Combined with the model checker SPIN, the method can expediently verify the properties of the protocol. By some modeling simplified strategies, this paper can model several protocols efficiently, and reduce the states space of the model. Compared with the previous literature, this paper achieves higher degree of automation, and better efficiency of verification. Finally based on the method described in the paper, we model and verify the Privacy and Key Management (PKM) authentication protocol. The experimental results show that the method of model checking is effective, which is useful for the other authentication protocols.

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cubukcu, M.; Laczkowski, P.; Vergnaud, C.

2015-02-28

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputteringmore » deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene.« less

Au generation centres doped n+-Si: hole-injection adjustable anode for efficient organic light emission

NASA Astrophysics Data System (ADS)

Li, Y. Z.; Ran, G. Z.; Zhao, W. Q.; Qin, G. G.

2008-08-01

An organic light-emitting diode (OLED) with an n-Si-anode usually has an efficiency evidently lower than the OLED with the same structure with a p-Si-anode due to insufficient hole injection from the n-Si anode compared with the p-Si-anode. In this study, we find that introducing Au as generation centres with a suitable concentration into the n+-Si anode can enhance hole injection to match electron injection and then considerably promote the power efficiency. With optimizing Au generation centre concentration in the n+-Si anode, the OLED with a structure of n+-Si: Au/NPB/AlQ/Sm/Au reaches a highest power efficiency of 1.0 lm W-1, evidently higher than the reported highest power efficiency of 0.2 lm W-1 for its p-Si-anode counterpart. Furthermore, when the electron injection is enhanced by adopting BPhen:Cs2CO3 partly instead of AlQ as the electron transport material, and the Au generation centre concentration in the n+-Si anode is promoted correspondingly, then a highest power efficiency of 1.8 lm W-1 is reached. The role of Au generation centres in the n+-Si anode is discussed.

Rhenium-phthalocyanine molecular nanojunction with high magnetic anisotropy and high spin filtering efficiency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, J.; Institute of Nanomaterial and Nanostructure, Changsha University of Science and Technology, Changsha 410114; Hu, J.

2015-07-20

Using the density functional and non-equilibrium Green's function approaches, we studied the magnetic anisotropy and spin-filtering properties of various transition metal-Phthalocyanine molecular junctions across two Au electrodes. Our important finding is that the Au-RePc-Au junction has both large spin filtering efficiency (>80%) and large magnetic anisotropy energy, which makes it suitable for device applications. To provide insights for the further experimental work, we discussed the correlation between the transport property, magnetic anisotropy, and wave function features of the RePc molecule, and we also illustrated the possibility of controlling its magnetic state.

Accurate and efficient spin integration for particle accelerators

DOE PAGES

Abell, Dan T.; Meiser, Dominic; Ranjbar, Vahid H.; ...

2015-02-01

Accurate spin tracking is a valuable tool for understanding spin dynamics in particle accelerators and can help improve the performance of an accelerator. In this paper, we present a detailed discussion of the integrators in the spin tracking code GPUSPINTRACK. We have implemented orbital integrators based on drift-kick, bend-kick, and matrix-kick splits. On top of the orbital integrators, we have implemented various integrators for the spin motion. These integrators use quaternions and Romberg quadratures to accelerate both the computation and the convergence of spin rotations.We evaluate their performance and accuracy in quantitative detail for individual elements as well as formore » the entire RHIC lattice. We exploit the inherently data-parallel nature of spin tracking to accelerate our algorithms on graphics processing units.« less

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-03-20

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. Here, we measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. While using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. Furthermore, the relative strengthmore » of the effect is in agreement with spectroscopic measurements and first principles calculations. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

High-efficiency microchip laser with self-injection seeding.

PubMed

Wang, Sha; Wang, Yan-biao; Yang, Xian-heng; Feng, Guo-ying; Zhou, Shou-huan

2015-12-10

In this paper, we use a small bandwidth 808 nm cw Ti:sapphire laser as a pump source to pump a picosecond microchip laser. Different focal length pump focus lenses have been tested to improve laser efficiency. A maximum slope efficiency of around 20% is obtained by a 30 mm focal length lens. The pump threshold is only 13 mW. In order to reduce the timing jitter, we explored the self-injection seeding method by adding a seeding cavity to the microchip laser. A reduction factor in the timing jitter of up to a factor of 23 relative to the unseeded laser is obtained. From the experiments, we also found that higher seeding pulse energy will help to reduce the jitter more.

A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window

NASA Astrophysics Data System (ADS)

Roca, Ronel Christian; Nishizawa, Nozomi; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-06-01

A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin InGaAs active layer under the spin-detecting Fe contact in which spin-polarized carriers are generated and injected into the Fe contact through a crystalline AlOx tunnel barrier. Experiments have been carried out with a circular polarization spectrometry set up, through which the helicity-dependent photocurrent component, ΔI, is obtained with the conversion efficiency F ≈ 0.4%, where F is the ratio between ΔI and total photocurrent Iph. This value is the highest reported so far for pure lateral-type spin-photodiodes. It is discussed through the analysis with a model consisting of drift-diffusion and quantum tunneling equations that a factor that limits the F value is unoccupied spin-polarized density-of-states of Fe in energy region into which the spin-polarized electrons in a semiconductor are injected.

Lower limits of spin detection efficiency for two-parameter two-qubit (TPTQ) states with non-ideal ferromagnetic detectors

NASA Astrophysics Data System (ADS)

Majd, Nayereh; Ghasemi, Zahra

2016-10-01

We have investigated a TPTQ state as an input state of a non-ideal ferromagnetic detectors. Minimal spin polarization required to demonstrate spin entanglement according to entanglement witness and CHSH inequality with respect to (w.r.t.) their two free parameters have been found, and we have numerically shown that the entanglement witness is less stringent than the direct tests of Bell's inequality in the form of CHSH in the entangled limits of its free parameters. In addition, the lower limits of spin detection efficiency fulfilling secure cryptographic key against eavesdropping have been derived. Finally, we have considered TPTQ state as an output of spin decoherence channel and the region of ballistic transmission time w.r.t. spin relaxation time and spin dephasing time has been found.

Injection Efficiency of Low-energy Particles at Oblique Shocks with a Focused Transport Model

NASA Astrophysics Data System (ADS)

Zuo, P.; Zhang, M.; Rassoul, H.

2013-12-01

There is strong evidence that a small portion of thermal and suprathermal particles from hot coronal material or remnants of previous solar energetic particle (SEP) events serve as the source of large SEP events (Desai et al. 2006). To build more powerful SEP models, it is necessary to model the detailed particle injection and acceleration process for source particles especially at lower energies. We present a test particle simulation on the injection and acceleration of low-energy suprathermal particles by Laminar nonrelativistic oblique shocks in the framework of the focused transport theory, which is proved to contain all necessary physics of shock acceleration, but avoid the limitation of diffusive shock acceleration (DSA). The injection efficiency as a function of Mach number, obliquity, injection speed, shock strength, cross-shock potential and the degree of turbulence is calculated. This test particle simulation proves that the focused transport theory is an extension of DSA theory with the capability of predicting the efficiency of particle injection. The results can be applied to modeling the SEP acceleration from source particles.

Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymer

NASA Astrophysics Data System (ADS)

Ioannidis, Andronique; Facci, John S.; Abkowitz, Martin A.

1998-08-01

Injection efficiency from evaporated Au contacts on a molecularly doped polymer (MDP) system has been previously observed to evolve from blocking to ohmic over time. In the present article this contact forming phenomenon is analyzed in detail. The initially blocking nature of the Au contact is in contrast with that expected from the relative workfunctions of Au and of the polymer which suggest Au should inject holes efficiently. It is also in apparent contrast to a differently prepared interface of the same materials. The phenomenon is not unique to this interface, having been confirmed also for evaporated Ag and mechanically made liquid Hg contacts on the same MDP. The MDP is a disordered solid state solution of electroactive triarylamine hole transporting TPD molecules in a polycarbonate matrix. The trap-free hole-transport MDP provides a model system for the study of metal/polymer interfaces by enabling the use of a recently developed technique that gives a quantitative measure of contact injection efficiency. The technique combines field-dependent steady state injection current measurements at a contact under test with time-of-flight (TOF) mobility measurements made on the same sample. In the present case, MDP films were prepared with two top vapor-deposited contacts, one of Au (test contact) and one of Al (for TOF), and a bottom carbon-loaded polymer electrode which is known to be ohmic for hole injection. The samples were aged at various temperatures below the glass transition of the MDP (85 °C) and the evolution of current versus field and capacitance versus frequency behaviors are followed in detail over time and analyzed. Control measurements ensure that the evolution of the electrical properties is due to the Au/polymer interface behavior and not the bulk. All evaporated Au contacts eventually achieved ohmic injection. The evaporated Au/MDP interface was also investigated by transmission electron microscopy as a function of time and showed no evidence of

Double-quantum homonuclear rotary resonance: Efficient dipolar recovery in magic-angle spinning nuclear magnetic resonance

NASA Astrophysics Data System (ADS)

Nielsen, N. C.; Bildsøe, H.; Jakobsen, H. J.; Levitt, M. H.

1994-08-01

We describe an efficient method for the recovery of homonuclear dipole-dipole interactions in magic-angle spinning NMR. Double-quantum homonuclear rotary resonance (2Q-HORROR) is established by fulfilling the condition ωr=2ω1, where ωr is the sample rotation frequency and ω1 is the nutation frequency around an applied resonant radio frequency (rf) field. This resonance can be used for double-quantum filtering and measurement of homonuclear dipolar interactions in the presence of magic-angle spinning. The spin dynamics depend only weakly on crystallite orientation allowing good performance for powder samples. Chemical shift effects are suppressed to zeroth order. The method is demonstrated for singly and doubly 13C labeled L-alanine.

Thermally Generated Spin Signals in a Nondegenerate Silicon Spin Valve

NASA Astrophysics Data System (ADS)

Yamashita, Naoto; Ando, Yuichiro; Koike, Hayato; Miwa, Shinji; Suzuki, Yoshishige; Shiraishi, Masashi

2018-05-01

Thermally generated spin signals are observed in a nondegenerate Si spin valve. The spin-dependent Seebeck effect is used for thermal spin-signal generation. A thermal gradient of about 200 mK at the interface of Fe and Si enables the generation of a spin voltage of 8 μ V at room temperature. A simple expansion of the conventional spin-drift-diffusion model that takes into account the spin-dependent Seebeck effect shows that semiconductor materials are more promising for thermal spin-signal generation comparing than metallic materials, and thus enable efficient heat recycling in semiconductor spin devices.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Hot Electron Injection into Uniaxially Strained Silicon

NASA Astrophysics Data System (ADS)

Kim, Hyun Soo

In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily

Coherent Spin Amplification Using a Beam Splitter

NASA Astrophysics Data System (ADS)

Yan, Chengyu; Kumar, Sanjeev; Thomas, Kalarikad; See, Patrick; Farrer, Ian; Ritchie, David; Griffiths, Jonathan; Jones, Geraint; Pepper, Michael

2018-03-01

We report spin amplification using a capacitive beam splitter in n -type GaAs where the spin polarization is monitored via a transverse electron focusing measurement. It is shown that partially spin-polarized current injected by the emitter can be precisely controlled, and the spin polarization associated with it can be amplified by the beam splitter, such that a considerably high spin polarization of around 50% can be obtained. Additionally, the spin remains coherent as shown by the observation of quantum interference. Our results illustrate that spin-polarization amplification can be achieved in materials without strong spin-orbit interaction.

Generation and detection of dissipationless spin current in a MgO/Si bilayer

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spintronics is an analogue to electronics where the spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two of the biggest challenges for spintronics devices. In this study, we report a solution to the two problems of spin current generation and detection in Si. Using non-local measurement, we experimentally demonstrate the generation of helical dissipationless spin current using the spin-Hall effect. Contrary to the theoretical prediction, we observe the spin-Hall effect in both n-doped and p-doped Si. The helical spin current is attributed to the site-inversion asymmetry of the diamond cubic lattice of Si and structure inversion asymmetry in a MgO/Si bilayer. The spin to charge conversion in Si is insignificant due to weak spin-orbit coupling. For the efficient detection of spin current, we report spin to charge conversion at the MgO (1 nm)/Si (2 µm) (p-doped and n-doped) thin film interface due to Rashba spin-orbit coupling. We detected the spin current at a distance of  >100 µm, which is an order of magnitude larger than the longest spin diffusion length measured using spin injection techniques. The existence of spin current in Si is verified from the coercivity reduction in a Co/Pd multilayer due to spin-orbit torque generated by spin current from Si.

Spin transport in carbon nanotubes bundles: An ab-initio study

NASA Astrophysics Data System (ADS)

Meena, Shweta; Choudhary, Sudhanshu

2017-10-01

First principles investigations are performed on understanding the spin-polarized transport in carbon nanotubes and carbon nanotube bundles consisting of (8 , 0) and (17 , 0) SWCNTs kept in vertical (out-of-plane) arrangement and contacted by two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes. On comparison of the results for all the structures, it is observed that carbon nanotube bundle consisting of (17 , 0) CNT offers high TMR ∼100% and the transport phenomenon is tunneling, since there are no transmission states near Fermi level. However, in individual (8 , 0) and (17 , 0) CNT the transport is not because of tunneling, since there are significant number of transmission states near Fermi level. High Magneto Resistance (MR) 96% and 99% is observed in individual (8 , 0) and (17 , 0) CNTs respectively. Both TMR and Spin Injection Efficiency η (Spin-Filtration) are higher in (17 , 0) carbon nanotube bundle structure, which is due to carbon nanotube bundle acting as a perfect barrier in vertical (out-of-plane) arrangement resulting in negligible spin-down current (I↓) in both Parallel Configuration (PC) and Antiparallel Configuration (APC).

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

PubMed

Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

2015-05-01

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

Anomalous modulation of spin torque-induced ferromagnetic resonance caused by direct currents in permalloy/platinum bilayer thin films

NASA Astrophysics Data System (ADS)

Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

2018-01-01

We systematically investigated the spin-torque ferromagnetic resonance (ST-FMR) in permalloy/Pt bilayer thin films under bias direct currents. According to the conventional ST-FMR theory, the half widths of the resonant peaks in the spectra can be modulated by bias currents, which give a reliable value of the spin injection efficiency of the spin Hall effect. On the other hand, the symmetric components of the spectra show an unexpected strong bias current dependence, while the asymmetric components are free from the modulation. These findings suggest that some contributions are missing in the ST-FMR analysis of the ferromagnetic/nonmagnetic metal bilayer thin films.

Spin pumping and inverse Rashba-Edelstein effect in NiFe/Ag/Bi and NiFe/Ag/Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Wei, E-mail: zwei@anl.gov; Jungfleisch, Matthias B.; Jiang, Wanjun

2015-05-07

The Rashba effect is an interaction between the spin and the momentum of electrons induced by the spin-orbit coupling in surface or interface states. We measured the inverse Rashba-Edelstein effect via spin pumping in Ag/Bi and Ag/Sb interfaces. The spin current is injected from the ferromagnetic resonance of a NiFe layer towards the Rashba interfaces, where it is further converted into a charge current. Using spin pumping theory, we quantify the conversion parameter of spin to charge current to be 0.11 ± 0.02 nm for Ag/Bi and a factor of ten smaller for Ag/Sb. The relative strength of the effect is in agreementmore » with spectroscopic measurements and first principles calculations. We also vary the interlayer materials to study the voltage output in relation to the change of the effective spin mixing conductance. The spin pumping experiment offers a straight-forward approach of using spin current as an efficient probe for detecting interface Rashba splitting.« less

Needle-free injection of insulin powder: delivery efficiency and skin irritation assessment.

PubMed

Li, Chun-yu; Wang, Zhe-wei; Tu, Can; Wang, Jia-bo; Jiang, Bing-qian; Li, Qi; Zeng, Ling-na; Ma, Zhi-jie; Zhang, Ping; Zhao, Yan-ling; Zhang, Ya-ming; Yan, Dan; Tan, Rui; Xiao, Xiao-he

2014-10-01

Insulin is widely used in treating diabetes, but still needs to be administered by needle injection. This study investigated a new needle-free approach for insulin delivery. A portable powder needleless injection (PNI) device with an automatic mechanical unit was designed. Its efficiency in delivering insulin was evaluated in alloxan-induced diabetic rabbits. The skin irritation caused by the device was investigated and the results were analyzed in relation to aerodynamic parameters. Inorganic salt-carried insulin powders had hypoglycemic effects, while raw insulin powders were not effective when delivered by PNI, indicating that salt carriers play an important role in the delivery of insulin via PNI. The relative delivery efficiency of phosphate-carried insulin powder using the PNI device was 72.25%. A safety assessment test showed that three key factors (gas pressure, cylinder volume, and nozzle distance) were related to the amount of skin irritation caused by the PNI device. Optimized injection conditions caused minimal skin lesions and are safe to use in practice. The results suggest that PNI has promising prospects as a novel technology for delivering insulin and other biological drugs.

Needle-free injection of insulin powder: delivery efficiency and skin irritation assessment*

PubMed Central

Li, Chun-yu; Wang, Zhe-wei; Tu, Can; Wang, Jia-bo; Jiang, Bing-qian; Li, Qi; Zeng, Ling-na; Ma, Zhi-jie; Zhang, Ping; Zhao, Yan-ling; Zhang, Ya-ming; Yan, Dan; Tan, Rui; Xiao, Xiao-he

2014-01-01

Insulin is widely used in treating diabetes, but still needs to be administered by needle injection. This study investigated a new needle-free approach for insulin delivery. A portable powder needleless injection (PNI) device with an automatic mechanical unit was designed. Its efficiency in delivering insulin was evaluated in alloxan-induced diabetic rabbits. The skin irritation caused by the device was investigated and the results were analyzed in relation to aerodynamic parameters. Inorganic salt-carried insulin powders had hypoglycemic effects, while raw insulin powders were not effective when delivered by PNI, indicating that salt carriers play an important role in the delivery of insulin via PNI. The relative delivery efficiency of phosphate-carried insulin powder using the PNI device was 72.25%. A safety assessment test showed that three key factors (gas pressure, cylinder volume, and nozzle distance) were related to the amount of skin irritation caused by the PNI device. Optimized injection conditions caused minimal skin lesions and are safe to use in practice. The results suggest that PNI has promising prospects as a novel technology for delivering insulin and other biological drugs. PMID:25294378

Spin nematics next to spin singlets

NASA Astrophysics Data System (ADS)

Yokoyama, Yuto; Hotta, Chisa

2018-05-01

We provide a route to generate nematic order in a spin-1/2 system. Unlike the well-known magnon-binding mechanism, our spin nematics requires neither the frustration effect nor spin polarization in a high field or in the vicinity of a ferromagnet, but instead appears next to the spin singlet phase. We start from a state consisting of a quantum spin-1/2 singlet dimer placed on each site of a triangular lattice, and show that interdimer ring exchange interactions efficiently dope the SU(2) triplets that itinerate and interact, easily driving a stable singlet state to either Bose-Einstein condensates or a triplet crystal, some hosting a spin nematic order. A variety of roles the ring exchange serves includes the generation of a bilinear-biquadratic interaction between nearby triplets, which is responsible for the emergent nematic order separated from the singlet phase by a first-order transition.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

NASA Astrophysics Data System (ADS)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

Kondo physics in non-local metallic spin transport devices.

PubMed

O'Brien, L; Erickson, M J; Spivak, D; Ambaye, H; Goyette, R J; Lauter, V; Crowell, P A; Leighton, C

2014-05-29

The non-local spin-valve is pivotal in spintronics, enabling separation of charge and spin currents, disruptive potential applications and the study of pressing problems in the physics of spin injection and relaxation. Primary among these problems is the perplexing non-monotonicity in the temperature-dependent spin accumulation in non-local ferromagnetic/non-magnetic metal structures, where the spin signal decreases at low temperatures. Here we show that this effect is strongly correlated with the ability of the ferromagnetic to form dilute local magnetic moments in the NM. This we achieve by studying a significantly expanded range of ferromagnetic/non-magnetic combinations. We argue that local moments, formed by ferromagnetic/non-magnetic interdiffusion, suppress the injected spin polarization and diffusion length via a manifestation of the Kondo effect, thus explaining all observations. We further show that this suppression can be completely quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer.

Comparison of spin transfer mechanisms in three terminal spin-torque-oscillators

NASA Astrophysics Data System (ADS)

Jue, Emilie; Rippard, William; Pufall, Matthew; Evarts, Eric R.; Quantum Electromagnetics Division Team

The manipulation of magnetization by electric current is one of the most active field of spintronics due to its interests for memory and logic applications. This control can be achieved through the transfer of angular momentum via a spin polarized current (the mechanism of spin-transfer torque - STT) or through a direct transfer of angular momentum from the crystal lattice through the spin-orbit interaction (the mechanism of spin-orbit torque - SOT). Over the five past years, SOT gained a lot of attention especially for the new possibilities that it offers for data storage application. However, the quantification and the comparison of both mechanisms' efficiencies remains uncertain. In this work, we compare for the first time the STT and SOT efficiencies in individual devices. For this, we created 3-terminal spin-torque oscillators (STO) composed of spin-valves (SV) on top of a Pt wires. The devices can be excited either by STT or by SOT depending on whether the current is applied through the SV or through the Pt wire. By varying the Pt width and the dimensions of the SV, we tune the SOT and STT and compare their efficiencies. We will discuss the complexity of such a structure and the differences in the magnetization dynamics induced by the different excitation mechanisms.

Spin Dynamics in Novel Materials Systems

NASA Astrophysics Data System (ADS)

Yu, Howard

Spintronics and organic electronics are fields that have made considerable advances in recent years, both in fundamental research and in applications. Organic materials have a number of attractive properties that enable them to complement applications traditionally fulfilled by inorganic materials, while spintronics seeks to take advantage of the spin degree of freedom to produce new applications. My research is aimed at combining these two fields to develop organic materials for spintronics use. My thesis is divided into three primary projects centered around an organic-based semiconducting ferrimagnet, vanadium tetracyanoethylene. First, we investigated the transport characteristics of a hybrid organic-inorganic heterostructure. Semiconductors form the basis of the electronics industry, and there has been considerable effort put forward to develop organic semiconductors for applications like organic light-emitting diodes and organic thin film transistors. Working with hybrid organic-inorganic semiconductor device structures allows us to potentially take advantage of the infrastructure that has already been developed for silicon and other inorganic semiconductors. This could potentially pave the way for a new class of active hybrid devices with multifunctional behavior. Second, we investigated the magnetic resonance characteristics of V[TCNE]x, in multiple measurement schemes and exploring the effect of temperature, frequency, and chemical tuning. Recently, the spintronics community has shifted focus from static electrical spin injection to various dynamic processes, such as spin pumping and thermal effects. Spin pumping in particular is an intriguing way to generate pure spin currents via magnetic resonance that has attracted a high degree of interest, with the FMR linewidth being an important metric for spin injection. Furthermore, we can potentially use these measurements to probe the magnetic properties as we change the physical properties of the materials by

Boolean and brain-inspired computing using spin-transfer torque devices

NASA Astrophysics Data System (ADS)

Fan, Deliang

two orders of lower energy consumption compared to state of the art CMOS implementation. Finally, we show the dynamics of injection locked Spin Hall Effect Spin-Torque Oscillator (SHE-STO) cluster can be exploited as a robust multi-dimensional distance metric for associative computing, image/ video analysis, etc. Our simulation results show that the proposed system architecture with injection locked SHE-STOs and the associated CMOS interface circuits can be suitable for robust and energy efficient associative computing and pattern matching.

GaN Light-Emitting Triodes (LETs) for High-Efficiency Hole Injection and for Assessment of the Physical Origin of the Efficiency Droop

DTIC Science & Technology

2007-07-06

quantum efficiency . In AlGaN-based UV LEDs, an electron-blocking layer (EBL) is frequently inserted between the p-type cladding layer and the active...me). This limits the hole injection efficiency into the active region, and hence internal quantum efficiency . Figure 1: (a) Schematic band...less efficient than along the lateral direction because most of the holes ionized from the acceptors are localized inside the quantum wells which are

Effect of hyperfine-induced spin mixing on the defect-enabled spin blockade and spin filtering in GaNAs

NASA Astrophysics Data System (ADS)

Puttisong, Y.; Wang, X. J.; Buyanova, I. A.; Chen, W. M.

2013-03-01

The effect of hyperfine interaction (HFI) on the recently discovered room-temperature defect-enabled spin-filtering effect in GaNAs alloys is investigated both experimentally and theoretically based on a spin Hamiltonian analysis. We provide direct experimental evidence that the HFI between the electron and nuclear spin of the central Ga atom of the spin-filtering defect, namely, the Gai interstitials, causes strong mixing of the electron spin states of the defect, thereby degrading the efficiency of the spin-filtering effect. We also show that the HFI-induced spin mixing can be suppressed by an application of a longitudinal magnetic field such that the electronic Zeeman interaction overcomes the HFI, leading to well-defined electron spin states beneficial to the spin-filtering effect. The results provide a guideline for further optimization of the defect-engineered spin-filtering effect.

Multiwell CO2 injectivity: impact of boundary conditions and brine extraction on geologic CO2 storage efficiency and pressure buildup.

PubMed

Heath, Jason E; McKenna, Sean A; Dewers, Thomas A; Roach, Jesse D; Kobos, Peter H

2014-01-21

CO2 storage efficiency is a metric that expresses the portion of the pore space of a subsurface geologic formation that is available to store CO2. Estimates of storage efficiency for large-scale geologic CO2 storage depend on a variety of factors including geologic properties and operational design. These factors govern estimates on CO2 storage resources, the longevity of storage sites, and potential pressure buildup in storage reservoirs. This study employs numerical modeling to quantify CO2 injection well numbers, well spacing, and storage efficiency as a function of geologic formation properties, open-versus-closed boundary conditions, and injection with or without brine extraction. The set of modeling runs is important as it allows the comparison of controlling factors on CO2 storage efficiency. Brine extraction in closed domains can result in storage efficiencies that are similar to those of injection in open-boundary domains. Geomechanical constraints on downhole pressure at both injection and extraction wells lower CO2 storage efficiency as compared to the idealized scenario in which the same volumes of CO2 and brine are injected and extracted, respectively. Geomechanical constraints should be taken into account to avoid potential damage to the storage site.

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

PubMed

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Energy consumption analysis of graphene based all spin logic device with voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Zhang, Zhizhong; Zhang, Yue; Zheng, Zhenyi; Wang, Guanda; Su, Li; Zhang, Youguang; Zhao, Weisheng

2017-05-01

All spin logic device (ASLD) is a promising option to realize the ultra-low power computing systems. However, the low spin transport efficiency and the non-local switching of the detector have become two key challenges of the ASLD. In this paper, we analyze the energy consumption of a graphene based ASLD with the ferromagnetic layer switching assistance by voltage control magnetic anisotropy (VCMA) effect. This structure has significant potential towards ultra-low power consumption: the applied voltage can not only shorten switching time of the ferromagnetic layer, but also decreases the critical injection current; the graphene channel enhances greatly the spin transport efficiency. By applying the approximate circuit model, the impact of material configurations, interfaces and geometry can be synthetically studied. An accurate physic model was also developed, based on which, we carry out the micro-magnetic simulations to analyze the magnetization dynamics. Combining these electrical and magnetic investigations, the energy consumption of the proposed ASLD can be estimated. With the optimizing parameters, the energy consumption can be reduced to 2.5 pJ for a logic operation.

Search for effective spin injection heterostructures based on half-metal Heusler alloys/gallium arsenide semiconductors: A theoretical investigation

NASA Astrophysics Data System (ADS)

Sivakumar, Chockalingam

Efficient electrical spin injection from half-metal (HM) electrodes into semiconducting (SC) channel material is a desirable aspect in spintronics, but a challenging one. Half-metals based on the Heusler alloy family are promising candidates as spin sources due to their compatibility with compound SCs, and very high Curie temperatures. Numerous efforts were made in the past two decades to grow atomically abrupt interfaces between HM_Heusler and SC heterostructures. However, diffusion of magnetic impurities into the semiconductor, defects and disorder near the interface, and formation of reacted phases were great challenges. A number of theoretical efforts were undertaken to understand the role of such material defects in destroying the half-metallicity and also to propose promising half-metal/SC heterostructures based on first principles. This dissertation summarizes the investigations undertaken to decode the complexity of, and to understand the various physical properties of, a number of real-world Heusler/SC heterostructure samples, based on the ab initio density functional theory (DFT) approach. In addition, it summarizes various results from the first principles-based search for promising half-metal/SC heterostructures. First, I present results from DFT-based predictive models of actual Co 2MnSi (CMS)/GaAs heterostructures grown in (001) texture. I investigate the physical, chemical, electronic, and magnetic properties to understand the complexity of these structures and to pinpoint the origin of interfacial effects, when present. Based on the investigations of such models, I discuss the utility of those actual samples in spintronic applications. Next, I summarise the results from an ab initio DFT-based survey of 6 half-Heusler half-metal/GaAs heterostructure models in (110) texture, since compound semiconductors such as GaAs have very long spin lifetime in (110) layering. I show 3 half-Heusler alloys (CoVAs, NiMnAs, and RhFeGe), that when interfaced with Ga

Optimized efficient liver T1ρ mapping using limited spin lock times

NASA Astrophysics Data System (ADS)

Yuan, Jing; Zhao, Feng; Griffith, James F.; Chan, Queenie; Wang, Yi-Xiang J.

2012-03-01

T1ρ relaxation has recently been found to be sensitive to liver fibrosis and has potential to be used for early detection of liver fibrosis and grading. Liver T1ρ imaging and accurate mapping are challenging because of the long scan time, respiration motion and high specific absorption rate. Reduction and optimization of spin lock times (TSLs) are an efficient way to reduce scan time and radiofrequency energy deposition of T1ρ imaging, but maintain the near-optimal precision of T1ρ mapping. This work analyzes the precision in T1ρ estimation with limited, in particular two, spin lock times, and explores the feasibility of using two specific operator-selected TSLs for efficient and accurate liver T1ρ mapping. Two optimized TSLs were derived by theoretical analysis and numerical simulations first, and tested experimentally by in vivo rat liver T1ρ imaging at 3 T. The simulation showed that the TSLs of 1 and 50 ms gave optimal T1ρ estimation in a range of 10-100 ms. In the experiment, no significant statistical difference was found between the T1ρ maps generated using the optimized two-TSL combination and the maps generated using the six TSLs of [1, 10, 20, 30, 40, 50] ms according to one-way ANOVA analysis (p = 0.1364 for liver and p = 0.8708 for muscle).

A molecular spin-photovoltaic device.

PubMed

Sun, Xiangnan; Vélez, Saül; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Parui, Subir; Zhu, Xiangwei; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

2017-08-18

We fabricated a C 60 fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Spin currents and spin-orbit torques in ferromagnetic trilayers.

PubMed

Baek, Seung-Heon C; Amin, Vivek P; Oh, Young-Wan; Go, Gyungchoon; Lee, Seung-Jae; Lee, Geun-Hee; Kim, Kab-Jin; Stiles, M D; Park, Byong-Guk; Lee, Kyung-Jin

2018-06-01

Magnetic torques generated through spin-orbit coupling 1-8 promise energy-efficient spintronic devices. For applications, it is important that these torques switch films with perpendicular magnetizations without an external magnetic field 9-14 . One suggested approach 15 to enable such switching uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and show that its dependence on the bottom-layer magnetization is not consistent with the anticipated bulk effects 15 . We describe a mechanism for spin-current generation 16,17 at the interface between the bottom layer and the spacer layer, which gives torques that are consistent with the measured magnetization dependence. This other-layer-generated spin-orbit torque is relevant to energy-efficient control of spintronic devices.

Current-induced spin polarization on a Pt surface: A new approach using spin-polarized positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Kawasuso, A.; Fukaya, Y.; Maekawa, M.; Zhang, H.; Seki, T.; Yoshino, T.; Saitoh, E.; Takanashi, K.

2013-09-01

Transversely spin-polarized positrons were injected near Pt and Au surfaces under an applied electric current. The three-photon annihilation of spin-triplet positronium, which was emitted from the surfaces into vacuum, was observed. When the positron spin polarization was perpendicular to the current direction, the maximum asymmetry of the three-photon annihilation intensity was observed upon current reversal for the Pt surfaces, whereas it was significantly reduced for the Au surface. The experimental results suggest that electrons near the Pt surfaces were in-plane and transversely spin-polarized with respect to the direction of the electric current. The maximum electron spin polarization was estimated to be more than 0.01 (1%).

Control of exciton spin statistics through spin polarization in organic optoelectronic devices

PubMed Central

Wang, Jianpu; Chepelianskii, Alexei; Gao, Feng; Greenham, Neil C.

2012-01-01

Spintronics based on organic semiconductor materials is attractive because of its rich fundamental physics and potential for device applications. Manipulating spins is obviously important for spintronics, and is usually achieved by using magnetic electrodes. Here we show a new approach where spin populations can be controlled primarily by energetics rather than kinetics. We find that exciton spin statistics can be substantially controlled by spin-polarizing carriers after injection using high magnetic fields and low temperatures, where the Zeeman energy is comparable with the thermal energy. By using this method, we demonstrate that singlet exciton formation can be suppressed by up to 53% in organic light-emitting diodes, and the dark conductance of organic photovoltaic devices can be increased by up to 45% due to enhanced formation of triplet charge-transfer states, leading to less recombination to the ground state. PMID:23149736

Using mixed solvent and changing spin-coating parameters to increase the efficiency and lifetime of organic solar cells.

PubMed

Tsai, Yu Sheng; Chu, Wei-Ping; Tang, Rong-Ming; Juang, Fuh-Shyang; Chang, Ming-Hua; Liu, Mark O; Hsieh, Tsung-Eong

2008-10-01

The derivative of C60, i.e., PCBM, and P3HT (3-hexylthiophene) were dissolved in chloroform:dichlorobenzene mixed solvent, then spin-coated as the active layer for organic solar cells (OSC). The experimental parameters were studied carefully to obtain the optimum power conversion efficiency (PCE), including the solvent mixing ratio, spin-coating speed, annealing conditions for the active layer, etc. The OSC devices were packaged with glass and a newly developed UV-glue to improve the lifetime and PCE. Dichlorobenzene solvent has great effect upon the PCE. Changing the spin-coating speed and increasing the number of steps increased the PCE apparently to 1.4%.

Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing

NASA Astrophysics Data System (ADS)

Sengupta, Abhronil; Roy, Kaushik

2017-12-01

Present day computers expend orders of magnitude more computational resources to perform various cognitive and perception related tasks that humans routinely perform every day. This has recently resulted in a seismic shift in the field of computation where research efforts are being directed to develop a neurocomputer that attempts to mimic the human brain by nanoelectronic components and thereby harness its efficiency in recognition problems. Bridging the gap between neuroscience and nanoelectronics, this paper attempts to provide a review of the recent developments in the field of spintronic device based neuromorphic computing. Description of various spin-transfer torque mechanisms that can be potentially utilized for realizing device structures mimicking neural and synaptic functionalities is provided. A cross-layer perspective extending from the device to the circuit and system level is presented to envision the design of an All-Spin neuromorphic processor enabled with on-chip learning functionalities. Device-circuit-algorithm co-simulation framework calibrated to experimental results suggest that such All-Spin neuromorphic systems can potentially achieve almost two orders of magnitude energy improvement in comparison to state-of-the-art CMOS implementations.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

PubMed

Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-04-15

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes have to climb over the energy barrier generated at the p-AlGaN/p-GaN interface before entering the quantum wells. In this work, to address this problem, we report the enhancement of hole injection efficiency by manipulating the hole transport mechanism through insertion of a thin GaN layer of 1 nm into the p-AlGaN EBL and propose an AlGaN/GaN/AlGaN-type EBL outperforming conventional AlGaN EBLs. Here, the position of the inserted thin GaN layer relative to the p-GaN region is found to be the key to enhancing the hole injection efficiency. InGaN/GaN LEDs with the proposed p-type AlGaN/GaN/AlGaN EBL have demonstrated substantially higher optical output power and external quantum efficiency.

Relaxation-optimized transfer of spin order in Ising spin chains

NASA Astrophysics Data System (ADS)

Stefanatos, Dionisis; Glaser, Steffen J.; Khaneja, Navin

2005-12-01

In this paper, we present relaxation optimized methods for the transfer of bilinear spin correlations along Ising spin chains. These relaxation optimized methods can be used as a building block for the transfer of polarization between distant spins on a spin chain, a problem that is ubiquitous in multidimensional nuclear magnetic resonance spectroscopy of proteins. Compared to standard techniques, significant reduction in relaxation losses is achieved by these optimized methods when transverse relaxation rates are much larger than the longitudinal relaxation rates and comparable to couplings between spins. We derive an upper bound on the efficiency of the transfer of the spin order along a chain of spins in the presence of relaxation and show that this bound can be approached by the relaxation optimized pulse sequences presented in the paper.

Spin wave amplification using the spin Hall effect in permalloy/platinum bilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gladii, O.; Henry, Y.; Bailleul, M.

2016-05-16

We investigate the effect of an electrical current on the attenuation length of a 900 nm wavelength spin-wave in a permalloy/Pt bilayer using propagating spin-wave spectroscopy. The modification of the spin-wave relaxation rate is linear in current density, reaching up to 14% for a current density of 2.3 × 10{sup 11} A/m{sup 2} in Pt. This change is attributed to the spin transfer torque induced by the spin Hall effect and corresponds to an effective spin Hall angle of 0.13, which is among the highest values reported so far. The spin Hall effect thus appears as an efficient way of amplifying/attenuating propagating spin waves.

Reexamination of Spin Transport Through a DOUBLE-δ Magnetic Barrier with Spin-Orbit Interactions

NASA Astrophysics Data System (ADS)

Bi, Caihua; Zhai, Feng

We revisit the properties of spin transport through a semiconductor 2DEG system subjected to the modulation of both a ferromagnetic metal (FM) stripe on top and the Rashba and Dresselhaus spin-orbit interactions (SOIs). The FM stripe has a magnetization along the transporting direction and generates an inhomogeneous magnetic field in the 2DEG plane which is taken as a double-δ shape. It is found that the spin polarization of this system generated from a spin-unpolarized injection can be remarkable only within a low Fermi energy region and is not more than 30% for the parameters available in current experiments. In this energy region, both the magnitude and the orientation of the spin polarization can be tuned by the Rashba strength, the Dresselhaus strength, and the magnetic field strength. The magnetization reversal of the FM stripe cannot result in a change of the conductance, but can rotate the orientation of the spin polarization. The results are in contrast to those in [ J. Phys.: Condens. Matter 15 (2003) L31] where a pure spin state for incident electrons is artificially assumed.

Determination of intrinsic spin Hall angle in Pt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yi; Deorani, Praveen; Qiu, Xuepeng

2014-10-13

The spin Hall angle in Pt is evaluated in Pt/NiFe bilayers by spin torque ferromagnetic resonance measurements and is found to increase with increasing the NiFe thickness. To extract the intrinsic spin Hall angle in Pt by estimating the total spin current injected into NiFe from Pt, the NiFe thickness dependent measurements are performed and the spin diffusion in the NiFe layer is taken into account. The intrinsic spin Hall angle of Pt is determined to be 0.068 at room temperature and is found to be almost constant in the temperature range of 13–300 K.

High-efficiency control of spin-wave propagation in ultra-thin yttrium iron garnet by the spin-orbit torque

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evelt, M.; Demidov, V. E., E-mail: demidov@uni-muenster.de; Bessonov, V.

2016-04-25

We study experimentally with submicrometer spatial resolution the propagation of spin waves in microscopic waveguides based on the nanometer-thick yttrium iron garnet and Pt layers. We demonstrate that by using the spin-orbit torque, the propagation length of the spin waves in such systems can be increased by nearly a factor of 10, which corresponds to the increase in the spin-wave intensity at the output of a 10 μm long transmission line by three orders of magnitude. We also show that, in the regime, where the magnetic damping is completely compensated by the spin-orbit torque, the spin-wave amplification is suppressed by themore » nonlinear scattering of the coherent spin waves from current-induced excitations.« less

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

NASA Astrophysics Data System (ADS)

Noel, P.; Thomas, C.; Fu, Y.; Vila, L.; Haas, B.; Jouneau, P.-H.; Gambarelli, S.; Meunier, T.; Ballet, P.; Attané, J. P.

2018-04-01

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 ±0.5 nm . The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

Demonstrating ultrafast polarization dynamics in spin-VCSELs

NASA Astrophysics Data System (ADS)

Lindemann, Markus; Pusch, Tobias; Michalzik, Rainer; Gerhardt, Nils C.; Hofmann, Martin R.

2018-02-01

Vertical-cavity surface-emitting lasers (VCSELs) are used for short-haul optical data transmission with increasing bit rates. The optimization involves both enhanced device designs and the use of higher-order modulation formats. In order to improve the modulation bandwidth substantially, the presented work employs spin-pumped VCSELs (spin-VCSELs) and their polarization dynamics instead of relying on intensity-modulated devices. In spin-VCSELs, the polarization state of the emitted light is controllable via spin injection. By optical spin pumping a single-mode VCSEL is forced to emit light composed of both orthogonal linearly polarized fundamental modes. The frequencies of these two modes differ slightly by a value determined by the cavity birefringence. As a result, the circular polarization degree oscillates with their beat frequency, i.e., with the birefringence-induced mode splitting. We used this phenomenon to show so-called polarization oscillations, which are generated by pulsed spin injection. Their frequency represents the polarization dynamics resonance frequency and can be tuned over a wide range via the birefringence, nearly independent from any other laser parameter. In previous work we demonstrated a maximum birefringence-induced mode splitting of more than 250 GHz. In this work, compared to previous publications, we show an almost doubled polarization oscillation frequency of more than 80 GHz. Furthermore, we discuss concepts to achieve even higher values far above 100 GHz.

Structure, magnetic ordering, and spin filtering efficiency of NiFe{sub 2}O{sub 4}(111) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matzen, S.; Moussy, J.-B., E-mail: jean-baptiste.moussy@cea.fr; Wei, P.

2014-05-05

NiFe{sub 2}O{sub 4}(111) ultrathin films (3–5 nm) have been grown by oxygen-assisted molecular beam epitaxy and integrated as effective spin-filter barriers. Structural and magnetic characterizations have been performed in order to investigate the presence of defects that could limit the spin filtering efficiency. These analyses have revealed the full strain relaxation of the layers with a cationic order in agreement with the inverse spinel structure but also the presence of antiphase boundaries. A spin-polarization up to +25% has been directly measured by the Meservey-Tedrow technique in Pt(111)/NiFe{sub 2}O{sub 4}(111)/γ-Al{sub 2}O{sub 3}(111)/Al tunnel junctions. The unexpected positive sign and relatively small valuemore » of the spin-polarization are discussed, in comparison with predictions and previous indirect tunnelling magnetoresistance measurements.« less

Investigation of charge injection and transport behavior in multilayer structure consisted of ferromagnetic metal and organic polymer under external fields

NASA Astrophysics Data System (ADS)

Zhao, Hua; Meng, Wei-Feng

2017-10-01

In this paper a five layer organic electronic device with alternately placed ferromagnetic metals and organic polymers: ferromagnetic metal/organic layer/ferromagnetic metal/organic layer/ferromagnetic metal, which is injected a spin-polarized electron from outsides, is studied theoretically using one-dimensional tight binding model Hamiltonian. We calculated equilibrium state behavior after an electron with spin is injected into the organic layer of this structure, charge density distribution and spin polarization density distribution of this injected spin-polarized electron, and mainly studied possible transport behavior of the injected spin polarized electron in this multilayer structure under different external electric fields. We analyze the physical process of the injected electron in this multilayer system. It is found by our calculation that the injected spin polarized electron exists as an electron-polaron state with spin polarization in the organic layer and it can pass through the middle ferromagnetic layer from the right-hand organic layer to the left-hand organic layer by the action of increasing external electric fields, which indicates that this structure may be used as a possible spin-polarized charge electronic device and also may provide a theoretical base for the organic electronic devices and it is also found that in the boundaries between the ferromagnetic layer and the organic layer there exist induced interface local dipoles due to the external electric fields.

A generalized spin diffusion equation with four electrochemical potentials for channels with spin-orbit coupling

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Hong, Seokmin; Datta, Supriyo

We will present a general semiclassical theory for an arbitrary channel with spin-orbit coupling (SOC), that uses four electrochemical potential (U + , D + , U - , and D -) depending on the sign of z-component of the spin (up (U) , down (D)) and the sign of the x-component of the group velocity (+ , -) . This can be considered as an extension of the standard spin diffusion equation that uses two electrochemical potentials for up and down spin states, allowing us to take into account the unique coupling between charge and spin degrees of freedom in channels with SOC. We will describe applications of this model to answer a number of interesting questions in this field such as: (1) whether topological insulators can switch magnets, (2) how the charge to spin conversion is influenced by the channel resistivity, and (3) how device structures can be designed to enhance spin injection. This work was supported by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA.

Thermal imaging of spin Peltier effect

NASA Astrophysics Data System (ADS)

Daimon, Shunsuke; Iguchi, Ryo; Hioki, Tomosato; Saitoh, Eiji; Uchida, Ken-Ichi

2016-12-01

The Peltier effect modulates the temperature of a junction comprising two different conductors in response to charge currents across the junction, which is used in solid-state heat pumps and temperature controllers in electronics. Recently, in spintronics, a spin counterpart of the Peltier effect was observed. The `spin Peltier effect' modulates the temperature of a magnetic junction in response to spin currents. Here we report thermal imaging of the spin Peltier effect; using active thermography technique, we visualize the temperature modulation induced by spin currents injected into a magnetic insulator from an adjacent metal. The thermal images reveal characteristic distribution of spin-current-induced heat sources, resulting in the temperature change confined only in the vicinity of the metal/insulator interface. This finding allows us to estimate the actual magnitude of the temperature modulation induced by the spin Peltier effect, which is more than one order of magnitude greater than previously believed.

Efficient charge-spin conversion and magnetization switching through the Rashba effect at topological-insulator/Ag interfaces

NASA Astrophysics Data System (ADS)

Shi, Shuyuan; Wang, Aizhu; Wang, Yi; Ramaswamy, Rajagopalan; Shen, Lei; Moon, Jisoo; Zhu, Dapeng; Yu, Jiawei; Oh, Seongshik; Feng, Yuanping; Yang, Hyunsoo

2018-01-01

We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) B i2S e3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin-orbit-torque ratio in the B i2S e3/Ag /CoFeB heterostructure shows a significant enhancement as the Ag thickness increases to ˜2 nm and reaches a value of 0.5 for 5 nm Ag, which is ˜3 times higher than that of B i2S e3/CoFeB at room temperature. The observation reveals the interfacial effect of B i2S e3/Ag exceeds that of the topological surface states (TSSs) in the B i2S e3 layer and plays a dominant role in the charge-to-spin conversion in the B i2S e3/Ag /CoFeB system. Based on first-principles calculations, we attribute our observation to the large Rashba splitting bands which wrap the TSS band and have the same net spin polarization direction as the TSS of B i2S e3 . Subsequently, we demonstrate Rashba-induced magnetization switching in B i2S e3/Ag /Py with a low current density of 5.8 ×105A /c m2 .

Robust and Efficient Spin Purification for Determinantal Configuration Interaction.

PubMed

Fales, B Scott; Hohenstein, Edward G; Levine, Benjamin G

2017-09-12

The limited precision of floating point arithmetic can lead to the qualitative and even catastrophic failure of quantum chemical algorithms, especially when high accuracy solutions are sought. For example, numerical errors accumulated while solving for determinantal configuration interaction wave functions via Davidson diagonalization may lead to spin contamination in the trial subspace. This spin contamination may cause the procedure to converge to roots with undesired ⟨Ŝ 2 ⟩, wasting computer time in the best case and leading to incorrect conclusions in the worst. In hopes of finding a suitable remedy, we investigate five purification schemes for ensuring that the eigenvectors have the desired ⟨Ŝ 2 ⟩. These schemes are based on projection, penalty, and iterative approaches. All of these schemes rely on a direct, graphics processing unit-accelerated algorithm for calculating the S 2 c matrix-vector product. We assess the computational cost and convergence behavior of these methods by application to several benchmark systems and find that the first-order spin penalty method is the optimal choice, though first-order and Löwdin projection approaches also provide fast convergence to the desired spin state. Finally, to demonstrate the utility of these approaches, we computed the lowest several excited states of an open-shell silver cluster (Ag 19 ) using the state-averaged complete active space self-consistent field method, where spin purification was required to ensure spin stability of the CI vector coefficients. Several low-lying states with significant multiply excited character are predicted, suggesting the value of a multireference approach for modeling plasmonic nanomaterials.

An efficient approach to CI: General matrix element formulas for spin-coupled particle-hole excitations

NASA Astrophysics Data System (ADS)

Tavan, Paul; Schulten, Klaus

1980-03-01

A new, efficient algorithm for the evaluation of the matrix elements of the CI Hamiltonian in the basis of spin-coupled ν-fold excitations (over orthonormal orbitals) is developed for even electron systems. For this purpose we construct an orthonormal, spin-adapted CI basis in the framework of second quantization. As a prerequisite, spin and space parts of the fermion operators have to be separated; this makes it possible to introduce the representation theory of the permutation group. The ν-fold excitation operators are Serber spin-coupled products of particle-hole excitations. This construction is also designed for CI calculations from multireference (open-shell) states. The 2N-electron Hamiltonian is expanded in terms of spin-coupled particle-hole operators which map any ν-fold excitation on ν-, and ν±1-, and ν±2-fold excitations. For the calculation of the CI matrix this leaves one with only the evaluation of overlap matrix elements between spin-coupled excitations. This leads to a set of ten general matrix element formulas which contain Serber representation matrices of the permutation group Sν×Sν as parameters. Because of the Serber structure of the CI basis these group-theoretical parameters are kept to a minimum such that they can be stored readily in the central memory of a computer for ν?4 and even for higher excitations. As the computational effort required to obtain the CI matrix elements from the general formulas is very small, the algorithm presented appears to constitute for even electron systems a promising alternative to existing CI methods for multiply excited configurations, e.g., the unitary group approach. Our method makes possible the adaptation of spatial symmetries and the selection of any subset of configurations. The algorithm has been implemented in a computer program and tested extensively for ν?4 and singlet ground and excited states.

Computational investigation of spin-polarization in cobalt/graphite superlattices

NASA Astrophysics Data System (ADS)

Goto, Kim F.; Hill, Nicola A.; Sanvito, Stefano

2003-03-01

We present results of a computational investigation of the magnetic properties of cobalt/ graphite superlattices. This work was motivated by experimental data showing spin injection into carbon nanotubes via cobalt contacts [1] as well as the discovery of a magnetic meteorite made from graphite and magnetic particles, in which part of the magnetization is on the carbon atoms [2]. Using density functional theory within the local spin-density approximation (the SIESTA implementation), we show that cobalt induces both n-doping and a magnetic moment in the graphite layers adjacent to the cobalt-carbon interface. We also show that the magnetic properties are strongly affected by the orientation of the graphite. Finally, implications for spin injection and spin-polarized transport are discussed. [1] K. Tsukagoshi, B.W. Alphenaar, and H. Ago, Nature (London) 401, 572 (1999) [2] J.M.D. Coey, M. Venkatesan, C.B. Fitzgerald, A.P. Douvalis and I.S. Sanders, Nature (London) 420, 156 (2002)

Out-of-equilibrium spin transport in mesoscopic superconductors.

PubMed

Quay, C H L; Aprili, M

2018-08-06

The excitations in conventional superconductors, Bogoliubov quasi-particles, are spin-[Formula: see text] fermions but their charge is energy-dependent and, in fact, zero at the gap edge. Therefore, in superconductors (unlike normal metals) spin and charge degrees of freedom may be separated. In this article, we review spin injection into conventional superconductors and focus on recent experiments on mesoscopic superconductors. We show how quasi-particle spin transport and out-of-equilibrium spin-dependent superconductivity can be triggered using the Zeeman splitting of the quasi-particle density of states in thin-film superconductors with small spin-mixing scattering. Finally, we address the spin dynamics and the feedback of quasi-particle spin imbalances on the amplitude of the superconducting energy gap.This article is part of the theme issue 'Andreev bound states'. © 2018 The Author(s).

SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

NASA Astrophysics Data System (ADS)

Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

2018-05-01

We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

Resonant spin wave excitations in a magnonic crystal cavity

NASA Astrophysics Data System (ADS)

Kumar, N.; Prabhakar, A.

2018-03-01

Spin polarized electric current, injected into permalloy (Py) through a nano contact, exerts a torque on the magnetization. The spin waves (SWs) thus excited propagate radially outward. We propose an antidot magnonic crystal (MC) with a three-hole defect (L3) around the nano contact, designed so that the frequency of the excited SWs, lies in the band gap of the MC. L3 thus acts as a resonant SW cavity. The energy in this magnonic crystal cavity can be tapped by an adjacent MC waveguide (MCW). An analysis of the simulated micromagnetic power spectrum, at the output port of the MCW reveals stable SW oscillations. The quality factor of the device, calculated using the decay method, was estimated as Q > 105 for an injected spin current density of 7 ×1012 A/m2.

Spin-polarized transport in multiterminal silicene nanodevices

NASA Astrophysics Data System (ADS)

Xu, Ning

2018-01-01

The spin-polarized transport properties of multiterminal silicene nanodevices are studied using the tight binding model and Landauer-Buttier approach. We propose a four-terminal †-shaped junction device and two types of three-terminal T-shaped junction devices, which are made of the crossing of a zigzag and an armchair silicene nanoribbon. If the electrons are injected into the metallic lead, the near-perfect spin polarization with 100% around the Fermi energy can be achieved easily at the other semiconducting leads. Thus the multiterminal silicene nanodevices can act as controllable spin filters.

Electrically tunable spin filtering for electron tunneling between spin-resolved quantum Hall edge states and a quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kiyama, H., E-mail: kiyama@meso.t.u-tokyo.ac.jp; Fujita, T.; Teraoka, S.

2014-06-30

Spin filtering with electrically tunable efficiency is achieved for electron tunneling between a quantum dot and spin-resolved quantum Hall edge states by locally gating the two-dimensional electron gas (2DEG) leads near the tunnel junction to the dot. The local gating can change the potential gradient in the 2DEG and consequently the edge state separation. We use this technique to electrically control the ratio of the dot–edge state tunnel coupling between opposite spins and finally increase spin filtering efficiency up to 91%, the highest ever reported, by optimizing the local gating.

Measurement of the absolute neutron beam polarization from a supermirror polarizer and the absolute efficiency of a neutron spin rotator for the NPDGamma experiment using a polarized 3He neutron spin-filter

NASA Astrophysics Data System (ADS)

Musgrave, M. M.; Baeßler, S.; Balascuta, S.; Barrón-Palos, L.; Blyth, D.; Bowman, J. D.; Chupp, T. E.; Cianciolo, V.; Crawford, C.; Craycraft, K.; Fomin, N.; Fry, J.; Gericke, M.; Gillis, R. C.; Grammer, K.; Greene, G. L.; Hamblen, J.; Hayes, C.; Huffman, P.; Jiang, C.; Kucuker, S.; McCrea, M.; Mueller, P. E.; Penttilä, S. I.; Snow, W. M.; Tang, E.; Tang, Z.; Tong, X.; Wilburn, W. S.

2018-07-01

Accurately measuring the neutron beam polarization of a high flux, large area neutron beam is necessary for many neutron physics experiments. The Fundamental Neutron Physics Beamline (FnPB) at the Spallation Neutron Source (SNS) is a pulsed neutron beam that was polarized with a supermirror polarizer for the NPDGamma experiment. The polarized neutron beam had a flux of ∼ 109 neutrons per second per cm2 and a cross sectional area of 10 × 12 cm2. The polarization of this neutron beam and the efficiency of a RF neutron spin rotator installed downstream on this beam were measured by neutron transmission through a polarized 3He neutron spin-filter. The pulsed nature of the SNS enabled us to employ an absolute measurement technique for both quantities which does not depend on accurate knowledge of the phase space of the neutron beam or the 3He polarization in the spin filter and is therefore of interest for any experiments on slow neutron beams from pulsed neutron sources which require knowledge of the absolute value of the neutron polarization. The polarization and spin-reversal efficiency measured in this work were done for the NPDGamma experiment, which measures the parity violating γ-ray angular distribution asymmetry with respect to the neutron spin direction in the capture of polarized neutrons on protons. The experimental technique, results, systematic effects, and applications to neutron capture targets are discussed.

Effect of injection matrix concentration on peak shape and separation efficiency in ion chromatography.

PubMed

Zhang, Ya; Lucy, Charles A

2014-12-05

In HPLC, injection of solvents that differ from the eluent can result in peak broadening due to solvent strength mismatch or viscous fingering. Broadened, distorted or even split analyte peaks may result. Past studies of this injection-induced peak distortion in reversed phase (RPLC) and hydrophilic interaction (HILIC) liquid chromatography have led to the conclusion that the sample should be injected in the eluent or a weaker solvent. However, there have been no studies of injection-induced peak distortion in ion chromatography (IC). To address this, injection-induced effects were studied for six inorganic anions (F-, Cl-, NO2-, Br-, NO3- and SO4(2-)) on a Dionex AS23 IC column using a HCO3-/CO3(2-) eluent. The VanMiddlesworth-Dorsey injection sensitivity parameter (s) showed that IC of anions has much greater tolerance to the injection matrix (HCO3-/CO3(2-) herein) mismatch than RPLC or HILIC. Even when the injection contained a ten-fold greater concentration of HCO3-/CO3(2-) than the eluent, the peak shapes and separation efficiencies of six analyte ions did not change significantly. At more than ten-fold greater matrix concentrations, analyte anions that elute near the system peak of the matrix were distorted, and in the extreme cases exhibited a small secondary peak on the analyte peak front. These studies better guide the degree of dilution needed prior to IC analysis of anions. Copyright © 2014 Elsevier B.V. All rights reserved.

A two-dimensional spin field-effect switch

NASA Astrophysics Data System (ADS)

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; Dery, Hanan; Hueso, Luis E.; Casanova, Fèlix

2016-11-01

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

Spin interactions in InAs quantum dots

NASA Astrophysics Data System (ADS)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Kyungmi; Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr; Department of Materials Science and Engineering, Korea University, Seoul 136-713

2015-08-07

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable formore » the optimization of STT-MRAM.« less

Manipulation of Spin-Torque Generation Using Ultrathin Au

NASA Astrophysics Data System (ADS)

An, Hongyu; Haku, Satoshi; Kanno, Yusuke; Nakayama, Hiroyasu; Maki, Hideyuki; Shi, Ji; Ando, Kazuya

2018-06-01

The generation and the manipulation of current-induced spin-orbit torques are of essential interest in spintronics. However, in spite of the vital progress in spin orbitronics, electric control of the spin-torque generation still remains elusive and challenging. We report on electric control of the spin-torque generation using ionic-liquid gating of ultrathin Au. We show that by simply depositing a SiO2 capping layer on an ultrathin-Au /Ni81Fe19 bilayer, the spin-torque generation efficiency is drastically enhanced by a maximum of 7 times. This enhancement is verified to be originated from the rough ultrathin-Au /Ni81Fe19 interface induced by the SiO2 deposition, which results in the enhancement of the interface spin-orbit scattering. We further show that the spin-torque generation efficiency from the ultrathin Au film can be reversibly manipulated by a factor of 2 using the ionic gating with an external electric field within a small range of 1 V. These results pave a way towards the efficient control of the spin-torque generation in spintronic applications.

Effect of external turbulence on the efficiency of film cooling with coolant injection into a transverse trench

NASA Astrophysics Data System (ADS)

Khalatov, A. A.; Panchenko, N. A.; Severin, S. D.

2017-09-01

Film cooling is among the basic methods used for thermal protection of blades in modern high-temperature gas turbines. Results of computer simulation of film cooling with coolant injection via a row of conventional inclined holes or a row of holes in a trench are presented in this paper. The ANSYS CFX 14 commercial software package was used for CFD-modeling. The effect is studied of the mainstream turbulence on the film cooling efficiency for the blowing ratio range between 0.6 and 2.3 and three different turbulence intensities of 1, 5, and 10%. The mainstream velocity was 150 and 400 m/s, while the temperatures of the mainstream and the injected coolant were 1100 and 500°C, respectively. It is demonstrated that, for the coolant injection via one row of trenched holes, an increase in the mainstream turbulence intensity reduces the film cooling efficiency in the entire investigated range of blowing ratios. It was revealed that freestream turbulence had varied effects on the film cooling efficiency depending on the blowing ratio and mainstream velocity in a blade channel. Thus, an increase in the mainstream turbulence intensity from 1 to 10% decreases the surface-averaged film cooling efficiency by 3-10% at a high mainstream velocity (400 m/s) in the blade channel and by 12-23% at a moderate velocity (of 150 m/s). Here, lower film cooling efficiencies correspond to higher blowing ratios. The effect of mainstream turbulence intensity on the film cooling efficiency decreases with increasing the mainstream velocity in the modeled channel for both investigated configurations.

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

Spin-Wave Chirality and Its Manifestations in Antiferromagnets

NASA Astrophysics Data System (ADS)

Proskurin, Igor; Stamps, Robert L.; Ovchinnikov, Alexander S.; Kishine, Jun-ichiro

2017-10-01

As first demonstrated by Tang and Cohen in chiral optics, the asymmetry in the rate of electromagnetic energy absorption between left and right enantiomers is determined by an optical chirality density. Here, we demonstrate that this effect can exist in magnetic spin systems. By constructing a formal analogy with electrodynamics, we show that in antiferromagnets with broken chiral symmetry, the asymmetry in local spin-wave energy absorption is proportional to a spin-wave chirality density, which is a direct counterpart of optical zilch. We propose that injection of a pure spin current into an antiferromagnet may serve as a chiral symmetry breaking mechanism, since its effect in the spin-wave approximation can be expressed in terms of additional Lifshitz invariants. We use linear response theory to show that the spin current induces a nonequilibrium spin-wave chirality density.

Highly efficient organic solar cells with improved vertical donor-acceptor compositional gradient via an inverted off-center spinning method

DOE PAGES

Huang, Jiang; Carpenter, Joshua H.; Li, Chang -Zhi; ...

2015-12-02

A novel, yet simple solution fabrication technique to address the trade-off between photocurrent and fill factor in thick bulk heterojunction organic solar cells is described. Lastly, the inverted off-center spinning technique promotes a vertical gradient of the donor–acceptor phase-separated morphology, enabling devices with near 100% internal quantum efficiency and a high power conversion efficiency of 10.95%.

Spinning Disc Technology – Residence Time Distribution and Efficiency in Textile Wastewater Treatment Application

NASA Astrophysics Data System (ADS)

Iacob Tudose, E. T.; Zaharia, C.

2018-06-01

The spinning disc (SD) technology has received increased attention in the last years due to its enhanced fluid flow features resulting in improved property transfers. The actual study focuses on characterization of the flow within a spinning disc system based on experimental data used to establish the residence time distribution (RTD) and its dependence on the feeding liquid flowrate and the disc rotational speed. To obtain these data, an inert tracer (sodium chloride) was injected as a pulse input in the liquid stream entering the disc and the salt concentration of the liquid leaving the disc was continuously recorded. The obtained data indicate that an increase in the liquid flowrate from 10 L/h to 30 L/h determines a narrower RTD function. Also, at rotational speed of 200 rpm, the residence time distribution is broader than that for 500 rpm and 800 rpm. The RTD data suggest that depending on the needed flow characteristics, one can choose a certain flowrate and rotational speed domain for its application. Also, the SD technology was used to process textile wastewater treated with bentonite (as both coagulation and discoloration agent) in order to investigate whether the quality indicators such as the total suspended solid content, turbidity and discoloration, can be improved. The experimental results are promising since the discoloration and the removals of suspended solids attained values of over 40%, and respectively, 50 %, depending on the effluent flowrate (10 l/h and 30 L/h), and the disc rotational speed (200 rpm, 550 rpm and 850 rpm) without any other addition of chemicals, or initiation of other simultaneous treatment processes (e.g., advanced oxidative, or reductive, or biochemical processes). This recommends spinning disc technology as a suitable and promising tool to improve different wastewater characteristics.

Electric field induced spin-polarized current

DOEpatents

Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

2006-05-02

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

Efficiency enhancement of polymer solar cells by applying poly(vinylpyrrolidone) as a cathode buffer layer via spin coating or self-assembly.

PubMed

Wang, Haitao; Zhang, Wenfeng; Xu, Chenhui; Bi, Xianghong; Chen, Boxue; Yang, Shangfeng

2013-01-01

A non-conjugated polymer poly(vinylpyrrolidone) (PVP) was applied as a new cathode buffer layer in P3HT:PCBM bulk heterojunction polymer solar cells (BHJ-PSCs), by means of either spin coating or self-assembly, resulting in significant efficiency enhancement. For the case of incorporation of PVP by spin coating, power conversion efficiency (PCE) of the ITO/PEDOT:PSS/P3HT:PCBM/PVP/Al BHJ-PSC device (3.90%) is enhanced by 29% under the optimum PVP spin-coating speed of 3000 rpm, which leads to the optimum thickness of PVP layer of ~3 nm. Such an efficiency enhancement is found to be primarily due to the increase of the short-circuit current (J(sc)) (31% enhancement), suggesting that the charge collection increases upon the incorporation of a PVP cathode buffer layer, which originates from the conjunct effects of the formation of a dipole layer between P3HT:PCBM active layer and Al electrodes, the chemical reactions of PVP molecules with Al atoms, and the increase of the roughness of the top Al film. Incorporation of PVP layer by doping PVP directly into the P3HT:PCBM active layer leads to an enhancement of PCE by 13% under the optimum PVP doping ratio of 3%, and this is interpreted by the migration of PVP molecules to the surface of the active layer via self-assembly, resulting in the formation of the PVP cathode buffer layer. While the formation of the PVP cathode buffer layer is fulfilled by both fabrication methods (spin coating and self-assembly), the dependence of the enhancement of the device performance on the thickness of the PVP cathode buffer layer formed by self-assembly or spin coating is different, because of the different aggregation microstructures of the PVP interlayer.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

NASA Astrophysics Data System (ADS)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Thermodynamics of energy, charge, and spin currents in a thermoelectric quantum-dot spin valve

NASA Astrophysics Data System (ADS)

Tang, Gaomin; Thingna, Juzar; Wang, Jian

2018-04-01

We provide a thermodynamically consistent description of energy, charge, and spin transfers in a thermoelectric quantum-dot spin valve in the collinear configuration based on nonequilibrium Green's function and full counting statistics. We use the fluctuation theorem symmetry and the concept of entropy production to characterize the efficiency with which thermal gradients can transduce charges or spins against their chemical potentials, arbitrary far from equilibrium. Close to equilibrium, we recover the Onsager reciprocal relations and the connection to linear response notions of performance such as the figure of merit. We also identify regimes where work extraction is more efficient far then close from equilibrium.

Coherent spin transport through a 350 micron thick silicon wafer.

PubMed

Huang, Biqin; Monsma, Douwe J; Appelbaum, Ian

2007-10-26

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least 13pi precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (T1) lower bound in silicon of over 500 ns at 60 K.

Efficiency and safety of subconjunctival injection of anti-VEGF agent - bevacizumab - in treating dry eye.

PubMed

Jiang, Xiaodan; Lv, Huibin; Qiu, Weiqiang; Liu, Ziyuan; Li, Xuemin; Wang, Wei

2015-01-01

Dry eye is a chronic inflammatory ocular surface disease with high prevalence. The current therapies for dry eye remain to be unspecific and notcomprehensive. This study aims to explore safety and efficacy of a novel treatment - subconjunctival injection of bevacizumab - in dry eye patients. Sixty-four eyes of 32 dry eye patients received subconjunctival injection of 100 μL 25 mg/mL bevacizumab. Dry eye symptoms, signs (corrected visual acuity, intraocular pressure, conjunctival vascularity, corneal staining, tear break-up time, Marx line score, and blood pressure), and conjunctival impression cytology were evaluated 3 days before and 1 week, 1 month, and 3 months after injection. Significant improvements were observed in dry eye symptoms, tear break-up time, and conjunctival vascularization area at all the visits after injection compared to the baseline (P<0.05). The density of the goblet cell increased significantly at 1 month and 3 months after injection (P<0.05). There was no visual and systemic threat observed in any patient. Subconjunctival injection of 100 μL 25 mg/mL bevacizumab is a safe and efficient treatment for ocular surface inflammation of dry eye disease.

Thermal spin current generation and spin transport in Pt/magnetic-insulator/Py heterostructures

NASA Astrophysics Data System (ADS)

Chen, Ching-Tzu; Safranski, Christopher; Krivorotov, Ilya; Sun, Jonathan

Magnetic insulators can transmit spin current via magnon propagation while blocking charge current. Furthermore, under Joule heating, magnon flow as a result of the spin Seeback effect can generate additional spin current. Incorporating magnetic insulators in a spin-orbit torque magnetoresistive memory device can potentially yield high switching efficiencies. Here we report the DC magneto-transport studies of these two effects in Pt/magnetic-insulator/Py heterostructures, using ferrimagnetic CoFexOy (CFO) and antiferromagnet NiO as the model magnetic insulators. We observe the presence and absence of the inverse spin-Hall signals from the thermal spin current in Pt/CFO/Py and Pt/NiO/Py structures. These results are consistent with our spin-torque FMR linewidths in comparison. We will also report investigations into the magnetic field-angle dependence of these observations.

Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Epstein, Arthur J.

2013-09-10

Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene wasmore » demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.« less

DMF as an Additive in a Two-Step Spin-Coating Method for 20% Conversion Efficiency in Perovskite Solar Cells.

PubMed

Wu, Jionghua; Xu, Xin; Zhao, Yanhong; Shi, Jiangjian; Xu, Yuzhuan; Luo, Yanhong; Li, Dongmei; Wu, Huijue; Meng, Qingbo

2017-08-16

DMF as an additive has been employed in FAI/MAI/IPA (FA= CH 2 (NH 2 ) 2 , MA = CH 3 NH 3 , IPA = isopropanol) solution for a two-step multicycle spin-coating method in order to prepare high-quality FA x MA 1-x PbI 2.55 Br 0.45 perovskite films. Further investigation reveals that the existence of DMF in the FAI/MAI/IPA solution can facilitate perovskite conversion, improve the film morphology, and reduce crystal defects, thus enhancing charge-transfer efficiency. By optimization of the DMF amount and spin-coating cycles, compact, pinhole-free perovskite films are obtained. The nucleation mechanisms of perovskite films in our multicycle spin-coating process are suggested; that is, the introduction of DMF in the spin-coating FAI/MAI/IPA solution can lead to the formation of an amorphous phase PbX 2 -AI-DMSO-DMF (X = I, Br; A = FA, MA) instead of intermediate phase (MA) 2 Pb 3 I 8 ·2DMSO. This amorphous phase, similar to that in the one-step method, can help FAI/MAI penetrate into the PbI 2 framework to completely convert into the perovskite. As high as 20.1% power conversion efficiency (PCE) has been achieved with a steady-state PCE of 19.1%. Our work offers a simple repeatable method to prepare high-quality perovskite films for high-performance PSCs and also help further understand the perovskite-crystallization process.

A two-dimensional spin field-effect switch

DOE PAGES

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; ...

2016-11-11

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS 2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS 2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS 2 with a gatemore » electrode. Lastly, our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.« less

Observation of long-lived persistent spin polarization in a topological insulator

NASA Astrophysics Data System (ADS)

Tian, Jifa; Hong, Seokmin; Miotkowski, Ireneusz; Datta, Supriyo; Chen, Yong P.

3D Topological insulators (TI), featuring helically spin-momentum-locked topological surface states (TSS), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current induced electronic spin polarization that may be used for all electrical spin generation and injection. Here, we report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large ``writing'' current applied for an extended time. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.

Nuclear spin cooling by electric dipole spin resonance and coherent population trapping

NASA Astrophysics Data System (ADS)

Li, Ai-Xian; Duan, Su-Qing; Zhang, Wei

2017-09-01

Nuclear spin fluctuation suppression is a key issue in preserving electron coherence for quantum information/computation. We propose an efficient way of nuclear spin cooling in semiconductor quantum dots (QDs) by the coherent population trapping (CPT) and the electric dipole spin resonance (EDSR) induced by optical fields and ac electric fields. The EDSR can enhance the spin flip-flop rate and may bring out bistability under certain conditions. By tuning the optical fields, we can avoid the EDSR induced bistability and obtain highly polarized nuclear spin state, which results in long electron coherence time. With the help of CPT and EDSR, an enhancement of 1500 times of the electron coherence time can been obtained after a 500 ns preparation time.

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

PubMed Central

Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

2016-01-01

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Injection locking at 2f of spin torque oscillators under influence of thermal noise.

PubMed

Tortarolo, M; Lacoste, B; Hem, J; Dieudonné, C; Cyrille, M-C; Katine, J A; Mauri, D; Zeltser, A; Buda-Prejbeanu, L D; Ebels, U

2018-01-29

Integration of Spin Torque Nano-Oscillators STNO's in conventional microwave circuits means that the devices have to meet certain specifications. One of the most important criteria is the phase noise, being the key parameter to evaluate the performance and define possible applications. Phase locking several oscillators together has been suggested as a possible means to decrease phase noise and consequently, the linewidth. In this work we present experiments, numerical simulations and an analytic model to describe the effects of thermal noise in the injection locking of a tunnel junction based STNO. The analytics show the relation of the intrinsic parameters of the STNO with the phase noise level, opening the path to tailor the spectral characteristics by the magnetic configuration. Experiments and simulations demonstrate that in the in-plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Moreover, our analysis shows that it is possible to control the phase noise by the reference microwave current (I RF ) and that it can be further reduced by increasing the bias current (I DC ) of the oscillator, keeping the reference current in feasible limits for applications.

Coherent spin transfer between molecularly bridged quantum dots.

PubMed

Ouyang, Min; Awschalom, David D

2003-08-22

Femtosecond time-resolved Faraday rotation spectroscopy reveals the instantaneous transfer of spin coherence through conjugated molecular bridges spanning quantum dots of different size over a broad range of temperature. The room-temperature spin-transfer efficiency is approximately 20%, showing that conjugated molecules can be used not only as interconnections for the hierarchical assembly of functional networks but also as efficient spin channels. The results suggest that this class of structures may be useful as two-spin quantum devices operating at ambient temperatures and may offer promising opportunities for future versatile molecule-based spintronic technologies.

Graphene-passivated cobalt as a spin-polarized electrode: growth and application to organic spintronics

NASA Astrophysics Data System (ADS)

Zhou, Guoqing; Tang, Guoqiang; Li, Tian; Pan, Guoxing; Deng, Zanhong; Zhang, Fapei

2017-03-01

The ferromagnetic electrode on which a clean high-quality electrode/interlayer interface is formed, is critical to achieve efficient injection of spin-dependent electrons in spintronic devices. In this work, we report on the preparation of graphene-passivated cobalt electrodes for application in vertical spin valves (SVs). In this strategy, high-quality monolayer and bi-layer graphene sheets have been grown directly on the crystal Co film substrates in a controllable process by chemical vapor deposition. The electrode is oxidation resistant and ensures a clean crystalline graphene/Co interface. The AlO x -based magnetic junction devices using such bottom electrodes, exhibit a negative tunnel magneto-resistance (TMR) of ca. 1.0% in the range of 5 K-300 K. Furthermore, we have also fabricated organic-based SVs employing a thin layer of fullerene C60 or an N-type polymeric semiconductor as the interlayer. The devices of both materials show a tunneling behavior of spin-polarized electron transport as well as appreciable TMR effect, demonstrating the high potential of such graphene-coated Co electrodes for organic-based spintronics.

Control of electron spin and orbital resonances in quantum dots through spin-orbit interactions

NASA Astrophysics Data System (ADS)

Stano, Peter; Fabian, Jaroslav

2008-01-01

The influence of a resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments, it is shown that the spin and orbital resonances can be efficiently controlled by spin-orbit interactions. The control is possible due to the strong sensitivity of the Rabi frequency to the dot configuration (the orientation of the dot and the applied static magnetic field); the sensitivity is a result of the anisotropy of the spin-orbit interactions. The so-called easy passage configuration is shown to be particularly suitable for a magnetic manipulation of spin qubits, ensuring long spin relaxation times and protecting the spin qubits from electric field disturbances accompanying on-chip manipulations.

Contact engineering for efficient charge injection in organic transistors with low-cost metal electrodes

NASA Astrophysics Data System (ADS)

Panigrahi, D.; Kumar, S.; Dhar, A.

2017-10-01

Controlling charge injection at the metal-semiconductor interface is very crucial for organic electronic devices in general as it can significantly influence the overall device performance. Herein, we report a facile, yet efficient contact modification approach, to enhance the hole injection efficiency through the incorporation of a high vacuum deposited TPD [N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine] interlayer between the electrodes and the active semiconducting layer. The device performance parameters such as mobility and on/off ratio improved significantly after the inclusion of the TPD buffer layer, and more interestingly, the devices with cost effective Ag and Cu electrodes were able to exhibit a superior device performance than the typically used Au source-drain devices. We have also observed that this contact modification technique can be even more effective than commonly used metal oxide interface modifying layers. Our investigations demonstrate the efficacy of the TPD interlayer in effectively reducing the interfacial contact resistance through the modification of pentacene energy levels, which consequently results in the substantial improvement in the device performances.

Resonant Spin-Transfer-Torque Nano-Oscillators

NASA Astrophysics Data System (ADS)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2017-12-01

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

Terahertz spin current pulses controlled by magnetic heterostructures

NASA Astrophysics Data System (ADS)

Kampfrath, T.; Battiato, M.; Maldonado, P.; Eilers, G.; Nötzold, J.; Mährlein, S.; Zbarsky, V.; Freimuth, F.; Mokrousov, Y.; Blügel, S.; Wolf, M.; Radu, I.; Oppeneer, P. M.; Münzenberg, M.

2013-04-01

In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime. Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures. A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility. The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse. We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states. Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.

Kepler Planet Detection Metrics: Pixel-Level Transit Injection Tests of Pipeline Detection Efficiency for Data Release 25

NASA Technical Reports Server (NTRS)

Christiansen, Jessie L.

2017-01-01

This document describes the results of the fourth pixel-level transit injection experiment, which was designed to measure the detection efficiency of both the Kepler pipeline (Jenkins 2002, 2010; Jenkins et al. 2017) and the Robovetter (Coughlin 2017). Previous transit injection experiments are described in Christiansen et al. (2013, 2015a,b, 2016).In order to calculate planet occurrence rates using a given Kepler planet catalogue, produced with a given version of the Kepler pipeline, we need to know the detection efficiency of that pipeline. This can be empirically determined by injecting a suite of simulated transit signals into the Kepler data, processing the data through the pipeline, and examining the distribution of successfully recovered transits. This document describes the results for the pixel-level transit injection experiment performed to accompany the final Q1-Q17 Data Release 25 (DR25) catalogue (Thompson et al. 2017)of the Kepler Objects of Interest. The catalogue was generated using the SOC pipeline version 9.3 and the DR25 Robovetter acting on the uniformly processed Q1-Q17 DR25 light curves (Thompson et al. 2016a) and assuming the Q1-Q17 DR25 Kepler stellar properties (Mathur et al. 2017).

Electric field controlled spin interference in a system with Rashba spin-orbit coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciftja, Orion, E-mail: ogciftja@pvamu.edu

injection of spin-polarized electrons.« less

General formalism of local thermodynamics with an example: Quantum Otto engine with a spin-1/2 coupled to an arbitrary spin.

PubMed

Altintas, Ferdi; Müstecaplıoğlu, Özgür E

2015-08-01

We investigate a quantum heat engine with a working substance of two particles, one with a spin-1/2 and the other with an arbitrary spin (spin s), coupled by Heisenberg exchange interaction, and subject to an external magnetic field. The engine operates in a quantum Otto cycle. Work harvested in the cycle and its efficiency are calculated using quantum thermodynamical definitions. It is found that the engine has higher efficiencies at higher spins and can harvest work at higher exchange interaction strengths. The role of exchange coupling and spin s on the work output and the thermal efficiency is studied in detail. In addition, the engine operation is analyzed from the perspective of local work and efficiency. We develop a general formalism to explore local thermodynamics applicable to any coupled bipartite system. Our general framework allows for examination of local thermodynamics even when global parameters of the system are varied in thermodynamic cycles. The generalized definitions of local and cooperative work are introduced by using mean field Hamiltonians. The general conditions for which the global work is not equal to the sum of the local works are given in terms of the covariance of the subsystems. Our coupled spin quantum Otto engine is used as an example of the general formalism.

General formalism of local thermodynamics with an example: Quantum Otto engine with a spin-1 /2 coupled to an arbitrary spin

NASA Astrophysics Data System (ADS)

Altintas, Ferdi; Müstecaplıoǧlu, Ã.-zgür E.

2015-08-01

We investigate a quantum heat engine with a working substance of two particles, one with a spin-1 /2 and the other with an arbitrary spin (spin s ), coupled by Heisenberg exchange interaction, and subject to an external magnetic field. The engine operates in a quantum Otto cycle. Work harvested in the cycle and its efficiency are calculated using quantum thermodynamical definitions. It is found that the engine has higher efficiencies at higher spins and can harvest work at higher exchange interaction strengths. The role of exchange coupling and spin s on the work output and the thermal efficiency is studied in detail. In addition, the engine operation is analyzed from the perspective of local work and efficiency. We develop a general formalism to explore local thermodynamics applicable to any coupled bipartite system. Our general framework allows for examination of local thermodynamics even when global parameters of the system are varied in thermodynamic cycles. The generalized definitions of local and cooperative work are introduced by using mean field Hamiltonians. The general conditions for which the global work is not equal to the sum of the local works are given in terms of the covariance of the subsystems. Our coupled spin quantum Otto engine is used as an example of the general formalism.

A two-dimensional spin field-effect switch

NASA Astrophysics Data System (ADS)

Casanova, Felix

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin current for logic operations. The mainstream approach followed so far, inspired by the seminal proposal of the Datta and Das spin modulator, has relied on the spin-orbit field as a medium for electrical control of the spin state. However, the still standing challenge is to find a material whose spin-orbit coupling (SOC) is weak enough to transport spins over long distances, while also being strong enough to allow their electrical manipulation. In our recent work, we demonstrate a radically different approach by engineering a van der Waals heterostructure from atomically thin crystals, and which combines the superior spin transport properties of graphene with the strong SOC of MoS2, a transition metal dichalcogenide with semiconducting properties. The spin transport in the graphene channel is modulated between ON and OFF states by tuning the spin absorption into the MoS2 layer with a gate electrode. Our demonstration of a spin field-effect switch using two-dimensional (2D) materials identifies a new route towards spin logic operations for beyond CMOS technology. Furthermore, the van der Waals heterostructure at the core of our experiments opens the path for fundamental research of exotic transport properties predicted for transition metal dichalcogenides, in which electrical spin injection has so far been elusive.

Mercury Emissions Capture Efficiency with Activated Carbon Injection at a Russian Coal-Fired Thermal Power Plant

EPA Science Inventory

This EPA-led project, conducted in collaboration with UNEP, the Swedish Environmental Institute and various Russian Institutes, that demonstrates that the mercury emission control efficiencies of activated carbon injection technologies applied at a Russian power plant burning Rus...

Super-Poissonian Shot Noise of Squeezed-Magnon Mediated Spin Transport.

PubMed

Kamra, Akashdeep; Belzig, Wolfgang

2016-04-08

The magnetization of a ferromagnet (F) driven out of equilibrium injects pure spin current into an adjacent conductor (N). Such F|N bilayers have become basic building blocks in a wide variety of spin-based devices. We evaluate the shot noise of the spin current traversing the F|N interface when F is subjected to a coherent microwave drive. We find that the noise spectrum is frequency independent up to the drive frequency, and increases linearly with frequency thereafter. The low frequency noise indicates super-Poissonian spin transfer, which results from quasiparticles with effective spin ℏ^{*}=ℏ(1+δ). For typical ferromagnetic thin films, δ∼1 is related to the dipolar interaction-mediated squeezing of F eigenmodes.

Modulation of spin dynamics via voltage control of spin-lattice coupling in multiferroics

DOE PAGES

Zhu, Mingmin; Zhou, Ziyao; Peng, Bin; ...

2017-02-03

Our work aims at magnonics manipulation by the magnetoelectric coupling effect and is motivated by the most recent progresses in both magnonics (spin dynamics) and multiferroics fields. Here, voltage control of magnonics, particularly the surface spin waves, is achieved in La 0.7Sr 0.3MnO 3/0.7Pb(Mg 1/3Nb 2/3)O 3-0.3PbTiO 3 multiferroic heterostructures. With the electron spin resonance method, a large 135 Oe shift of surface spin wave resonance (≈7 times greater than conventional voltage-induced ferromagnetic resonance shift of 20 Oe) is determined. A model of the spin-lattice coupling effect, i.e., varying exchange stiffness due to voltage-induced anisotropic lattice changes, has been establishedmore » to explain experiment results with good agreement. In addition, an “on” and “off” spin wave state switch near the critical angle upon applying a voltage is created. The modulation of spin dynamics by spin-lattice coupling effect provides a platform for realizing energy-efficient, tunable magnonics devices.« less

Spin-wave diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Jin; Yu, Weichao; Wu, Ruqian

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

Spin-wave diode

DOE PAGES

Lan, Jin; Yu, Weichao; Wu, Ruqian; ...

2015-12-28

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

NASA Astrophysics Data System (ADS)

Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

2014-03-01

In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

Spin dependent transport and spin transfer in nanoconstrictions and current confined nanomagnets

NASA Astrophysics Data System (ADS)

Ozatay, Ozhan

In this thesis, I have employed point contact spectroscopy to determine the nature of electron transport across constrained domain walls in a ferromagnetic nanocontact and to uncover the relationship between ballisticity of electron transport and domain wall magnetoresistance. In the range of hole sizes studied (from 10 to 3 nm) the resulting magnetoresistance was found to be less than 0.5% and one that increases with decreasing contact size. I have used point contacts as local probes, to study the spin dependent transport across Ferromagnet/Normal Metal/Ferromagnet(FM/NM/FM) trilayers as well as the consequences of localized spin polarized current injection into a nano magnet on spin angular momentum transfer and high frequency magnetization dynamics. I have demonstrated that absolute values for spin transfer switching critical currents are reduced in this new geometry as compared to uniform current injection. I have also performed micromagnetic simulations to determine the evolution of magnetization under the application of magnetic fields and currents to gain more insights into experimental results. I have used Scanning Transmission Electron Microscopy (STEM), X-Ray Photoemission Spectroscopy (XPS) and Electron Energy Loss Spectroscopy (EELS) techniques to characterize the interfacial mixing and oxygen diffusion in the metallic multilayers of interest. I have shown that the Ta/CuOx bilayer structure provides a smooth substrate by improving interfacial roughness due to grain boundary diffusion of oxygen and reaction with Ta that fills in the grain boundary gaps in Cu. Analysis of the Py/AlOx interface proved a strong oxidation passivation on the Py surface by Al coating accompanied by Fe segregation into the alumina. I have utilized the characterization results to design a new nanomagnet whose sidewalls are protected from adventitious sidewall oxide layers and yields improved device performance. The oxide layers that naturally develop at the sidewalls of Py

GMAG Dissertation Award: Tunnel spin injectors for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

2004-03-01

Spin-based electronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The magneto-transport properties of two families of tunnel spin injectors will be discussed. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence (EL) from a quantum well light emitting diode structure. The temperature and bias dependence of the EL polarization provides insight into the mechanism of spin relaxation within the semiconductor heterostructure. Collaborators: Roger Wang^1,2, Sebastiaan van Dijken^1,*, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^2, Glenn Solomon^2, James Harris^2, and Stuart S. P. Parkin^1 * Currently at Trinity College, Dublin, Ireland

Optical pumping of electron and nuclear spin in a negatively-charged quantum dot

NASA Astrophysics Data System (ADS)

Bracker, Allan; Gershoni, David; Korenev, Vladimir

2005-03-01

We report optical pumping of electron and nuclear spins in an individual negatively-charged quantum dot. With a bias-controlled heterostructure, we inject one electron into the quantum dot. Intense laser excitation produces negative photoluminescence polarization, which is easily erased by the Hanle effect, demonstrating optical pumping of a long-lived resident electron. The electron spin lifetime is consistent with the influence of nuclear spin fluctuations. Measuring the Overhauser effect in high magnetic fields, we observe a high degree of nuclear spin polarization, which is closely correlated to electron spin pumping.

Highly retrievable spin-wave-photon entanglement source.

PubMed

Yang, Sheng-Jun; Wang, Xu-Jie; Li, Jun; Rui, Jun; Bao, Xiao-Hui; Pan, Jian-Wei

2015-05-29

Entanglement between a single photon and a quantum memory forms the building blocks for a quantum repeater and quantum network. Previous entanglement sources are typically with low retrieval efficiency, which limits future larger-scale applications. Here, we report a source of highly retrievable spin-wave-photon entanglement. Polarization entanglement is created through interaction of a single photon with an ensemble of atoms inside a low-finesse ring cavity. The cavity is engineered to be resonant for dual spin-wave modes, which thus enables efficient retrieval of the spin-wave qubit. An intrinsic retrieval efficiency up to 76(4)% has been observed. Such a highly retrievable atom-photon entanglement source will be very useful in future larger-scale quantum repeater and quantum network applications.

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure.

PubMed

Yu, Jiadong; Wang, Lai; Di Yang; Zheng, Jiyuan; Xing, Yuchen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2016-10-19

The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (~49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source.

Coherent spin control of a nanocavity-enhanced qubit in diamond

DOE PAGES

Li, Luozhou; Lu, Ming; Schroder, Tim; ...

2015-01-28

A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy nanocavity systems in strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 µs using a silicon hard-mask fabrication process. This spin-photon interfacemore » is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks.« less

Determination of the spin Hall angle in single-crystalline Pt films from spin pumping experiments

NASA Astrophysics Data System (ADS)

Keller, Sascha; Mihalceanu, Laura; Schweizer, Matthias R.; Lang, Philipp; Heinz, Björn; Geilen, Moritz; Brächer, Thomas; Pirro, Philipp; Meyer, Thomas; Conca, Andres; Karfaridis, Dimitrios; Vourlias, George; Kehagias, Thomas; Hillebrands, Burkard; Papaioannou, Evangelos Th

2018-05-01

We report on the determination of the spin Hall angle in ultra-clean, defect-reduced epitaxial Pt films. By applying vector network analyzer ferromagnetic resonance spectroscopy to a series of single crystalline Fe (12 nm) /Pt (t Pt) bilayers we determine the real part of the spin mixing conductance (4.4 ± 0.2) × 1019 m‑2 and reveal a very small spin diffusion length in the epitaxial Pt (1.1 ± 0.1) nm film. We investigate the spin pumping and ISHE in a stripe microstucture excited by a microwave coplanar waveguide antenna. By using their different angular dependencies, we distinguish between spin rectification effects and the inverse spin Hall effect. The relatively large value of the spin Hall angle (5.7 ± 1.4)% shows that ultra-clean e-beam evaporated non-magnetic materials can also have a comparable spin-to-charge current conversion efficiency as sputtered high resistivity layers.

Method and apparatus for efficient injection of CO2 in oceans

DOEpatents

West, Olivia R.; Tsouris, Constantinos; Liang, Liyuan

2003-07-29

A liquid CO.sub.2 injection system produces a negatively buoyant consolidated stream of liquid CO.sub.2, CO.sub.2 hydrate, and water that sinks upon release at ocean depths in the range of 700-1500 m. In this approach, seawater at a predetermined ocean depth is mixed with the liquid CO.sub.2 stream before release into the ocean. Because mixing is conducted at depths where pressures and temperatures are suitable for CO.sub.2 hydrate formation, the consolidated stream issuing from the injector is negatively buoyant, and comprises mixed CO.sub.2 -hydrate/CO.sub.2 -liquid/water phases. The "sinking" characteristic of the produced stream will prolong the metastability of CO.sub.2 ocean sequestration by reducing the CO.sub.2 dissolution rate into water. Furthermore, the deeper the CO.sub.2 hydrate stream sinks after injection, the more stable it becomes internally, the deeper it is dissolved, and the more dispersed is the resulting CO.sub.2 plume. These factors increase efficiency, increase the residence time of CO2 in the ocean, and decrease the cost of CO.sub.2 sequestration while reducing deleterious impacts of free CO.sub.2 gas in ocean water.

Plasmonic diabolo cavity enhanced spin pumping

NASA Astrophysics Data System (ADS)

Qian, Jie; Gou, Peng; Gui, Y. S.; Hu, C. M.; An, Zhenghua

2017-09-01

Low spin-current generation efficiency has impeded further progress in practical spin devices, especially in the form of wireless excitation. To tackle this problem, a unique Plasmonic Diabolo Cavity (PDC) is proposed to enhance the spin pumping (SP) signal. The SP microwave photovoltage is enhanced ˜22-fold by PDC at ferromagnetic resonance (FMR). This improvement owes to the localization of the microwave magnetic field, which drives the spin precession process to more effectively generate photovoltage at the FMR condition. The in-plane anisotropy of spin pumping is found to be suppressed by PDC. Our work suggests that metamaterial resonant structures exhibit rich interactions with spin dynamics and could potentially be applied in future high-frequency spintronics.

Rectifying full-counting statistics in a spin Seebeck engine

NASA Astrophysics Data System (ADS)

Tang, Gaomin; Chen, Xiaobin; Ren, Jie; Wang, Jian

2018-02-01

In terms of the nonequilibrium Green's function framework, we formulate the full-counting statistics of conjugate thermal spin transport in a spin Seebeck engine, which is made by a metal-ferromagnet insulator interface driven by a temperature bias. We obtain general expressions of scaled cumulant generating functions of both heat and spin currents that hold special fluctuation symmetry relations, and demonstrate intriguing properties, such as rectification and negative differential effects of high-order fluctuations of thermal excited spin current, maximum output spin power, and efficiency. The transport and noise depend on the strongly fluctuating electron density of states at the interface. The results are relevant for designing an efficient spin Seebeck engine and can broaden our view in nonequilibrium thermodynamics and the nonlinear phenomenon in quantum transport systems.

A Highly Efficient Six-Stroke Internal Combustion Engine Cycle with Water Injection for In-Cylinder Exhaust Heat Recovery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conklin, Jim; Szybist, James P

2010-01-01

A concept is presented here that adds two additional strokes to the four-stroke Otto or Diesel cycle that has the potential to increase fuel efficiency of the basic cycle. The engine cycle can be thought of as a 4 stroke Otto or Diesel cycle followed by a 2-stroke heat recovery steam cycle. Early exhaust valve closing during the exhaust stroke coupled with water injection are employed to add an additional power stroke at the end of the conventional four-stroke Otto or Diesel cycle. An ideal thermodynamics model of the exhaust gas compression, water injection at top center, and expansion wasmore » used to investigate this modification that effectively recovers waste heat from both the engine coolant and combustion exhaust gas. Thus, this concept recovers energy from two waste heat sources of current engine designs and converts heat normally discarded to useable power and work. This concept has the potential of a substantial increase in fuel efficiency over existing conventional internal combustion engines, and under appropriate injected water conditions, increase the fuel efficiency without incurring a decrease in power density. By changing the exhaust valve closing angle during the exhaust stroke, the ideal amount of exhaust can be recompressed for the amount of water injected, thereby minimizing the work input and maximizing the mean effective pressure of the steam expansion stroke (MEPsteam). The value of this exhaust valve closing for maximum MEPsteam depends on the limiting conditions of either one bar or the dew point temperature of the expansion gas/moisture mixture when the exhaust valve opens to discard the spent gas mixture in the sixth stroke. The range of MEPsteam calculated for the geometry of a conventional gasoline spark-ignited internal combustion engine and for plausible water injection parameters is from 0.75 to 2.5 bars. Typical combustion mean effective pressures (MEPcombustion) of naturally aspirated gasoline engines are up to 10 bar, thus

Mesoscopic spin Hall effect in semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Calculation of nuclear spin-spin coupling constants using frozen density embedding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Götz, Andreas W., E-mail: agoetz@sdsc.edu; Autschbach, Jochen; Visscher, Lucas, E-mail: visscher@chem.vu.nl

2014-03-14

We present a method for a subsystem-based calculation of indirect nuclear spin-spin coupling tensors within the framework of current-spin-density-functional theory. Our approach is based on the frozen-density embedding scheme within density-functional theory and extends a previously reported subsystem-based approach for the calculation of nuclear magnetic resonance shielding tensors to magnetic fields which couple not only to orbital but also spin degrees of freedom. This leads to a formulation in which the electron density, the induced paramagnetic current, and the induced spin-magnetization density are calculated separately for the individual subsystems. This is particularly useful for the inclusion of environmental effects inmore » the calculation of nuclear spin-spin coupling constants. Neglecting the induced paramagnetic current and spin-magnetization density in the environment due to the magnetic moments of the coupled nuclei leads to a very efficient method in which the computationally expensive response calculation has to be performed only for the subsystem of interest. We show that this approach leads to very good results for the calculation of solvent-induced shifts of nuclear spin-spin coupling constants in hydrogen-bonded systems. Also for systems with stronger interactions, frozen-density embedding performs remarkably well, given the approximate nature of currently available functionals for the non-additive kinetic energy. As an example we show results for methylmercury halides which exhibit an exceptionally large shift of the one-bond coupling constants between {sup 199}Hg and {sup 13}C upon coordination of dimethylsulfoxide solvent molecules.« less

Engineering spin-orbit torque in Co/Pt multilayers with perpendicular magnetic anisotropy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Kuo-Feng; Wang, Ding-Shuo; Lai, Chih-Huang, E-mail: chlai@mx.nthu.edu.tw

To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stability and high spin-orbit-torque efficiency simultaneously in the multilayers structure.

Geometrical dependence of spin current absorption into a ferromagnetic nanodot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp

We have investigated the absorption property of the diffusive pure spin current due to a ferromagnetic nanodot in a laterally configured ferromagnetic/nonmagnetic hybrid nanostructure. The spin absorption in a nano-pillar-based lateral-spin-valve structure was confirmed to increase with increasing the lateral dimension of the ferromagnetic dot. However, the absorption efficiency was smaller than that in a conventional lateral spin valve based on nanowire junctions because the large effective cross section of the two dimensional nonmagnetic film reduces the spin absorption selectivity. We also found that the absorption efficiency of the spin current is significantly enhanced by using a thick ferromagnetic nanodot.more » This can be understood by taking into account the spin absorption through the side surface of the ferromagnetic dot quantitatively.« less

Gate-driven pure spin current in graphene

NASA Astrophysics Data System (ADS)

Lin, Xiaoyang; Su, Li; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Zhao, Weisheng; Fert, Albert

An important challenge of spin current based devices is to realize long-distance transport and efficient manipulation of pure spin current without frequent spin-charge conversions. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of conductivity and spin diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel spin relaxation mechanism results in more appreciable demultiplexing performance, which also implies a feasible strategy to characterize the spin relaxation mechanisms. The unique feature of the pure spin current demultiplexing operation would pave a way for ultra-low power spin logic beyond CMOS. Supported by the NSFC (61627813, 51602013) and the 111 project (B16001).

Spin entanglement, decoherence and Bohm's EPR paradox.

PubMed

Cavalcanti, E G; Drummond, P D; Bachor, H A; Reid, M D

2009-10-12

We obtain criteria for entanglement and the EPR paradox for spin-entangled particles and analyse the effects of decoherence caused by absorption and state purity errors. For a two qubit photonic state, entanglement can occur for all transmission efficiencies. In this case, the state preparation purity must be above a threshold value. However, Bohm's spin EPR paradox can be achieved only above a critical level of loss. We calculate a required efficiency of 58%, which appears achievable with current quantum optical technologies. For a macroscopic number of particles prepared in a correlated state, spin entanglement and the EPR paradox can be demonstrated using our criteria for efficiencies eta > 1/3 and eta > 2/3 respectively. This indicates a surprising insensitivity to loss decoherence, in a macroscopic system of ultra-cold atoms or photons.

Magnetic nano-oscillator driven by pure spin current.

PubMed

Demidov, Vladislav E; Urazhdin, Sergei; Ulrichs, Henning; Tiberkevich, Vasyl; Slavin, Andrei; Baither, Dietmar; Schmitz, Guido; Demokritov, Sergej O

2012-12-01

With the advent of pure-spin-current sources, spin-based electronic (spintronic) devices no longer require electrical charge transfer, opening new possibilities for both conducting and insulating spintronic systems. Pure spin currents have been used to suppress noise caused by thermal fluctuations in magnetic nanodevices, amplify propagating magnetization waves, and to reduce the dynamic damping in magnetic films. However, generation of coherent auto-oscillations by pure spin currents has not been achieved so far. Here we demonstrate the generation of single-mode coherent auto-oscillations in a device that combines local injection of a pure spin current with enhanced spin-wave radiation losses. Counterintuitively, radiation losses enable excitation of auto-oscillation, suppressing the nonlinear processes that prevent auto-oscillation by redistributing the energy between different modes. Our devices exhibit auto-oscillations at moderate current densities, at a microwave frequency tunable over a wide range. These findings suggest a new route for the implementation of nanoscale microwave sources for next-generation integrated electronics.

Logical spin-filtering in a triangular network of quantum nanorings with a Rashba spin-orbit interaction

NASA Astrophysics Data System (ADS)

Dehghan, E.; Sanavi Khoshnoud, D.; Naeimi, A. S.

2018-01-01

The spin-resolved electron transport through a triangular network of quantum nanorings is studied in the presence of Rashba spin-orbit interaction (RSOI) and a magnetic flux using quantum waveguide theory. This study illustrates that, by tuning Rashba constant, magnetic flux and incoming electron energy, the triangular network of quantum rings can act as a perfect logical spin-filtering with high efficiency. By changing in the energy of incoming electron, at a proper value of the Rashba constant and magnetic flux, a reverse in the direction of spin can take place in the triangular network of quantum nanorings. Furthermore, the triangular network of quantum nanorings can be designed as a device and shows several simultaneous spintronic properties such as spin-splitter and spin-inverter. This spin-splitting is dependent on the energy of the incoming electron. Additionally, different polarizations can be achieved in the two outgoing leads from an originally incoming spin state that simulates a Stern-Gerlach apparatus.

Efficient eigenvalue determination for arbitrary Pauli products based on generalized spin-spin interactions

NASA Astrophysics Data System (ADS)

Leibfried, D.; Wineland, D. J.

2018-03-01

Effective spin-spin interactions between ? qubits enable the determination of the eigenvalue of an arbitrary Pauli product of dimension N with a constant, small number of multi-qubit gates that is independent of N and encodes the eigenvalue in the measurement basis states of an extra ancilla qubit. Such interactions are available whenever qubits can be coupled to a shared harmonic oscillator, a situation that can be realized in many physical qubit implementations. For example, suitable interactions have already been realized for up to 14 qubits in ion traps. It should be possible to implement stabilizer codes for quantum error correction with a constant number of multi-qubit gates, in contrast to typical constructions with a number of two-qubit gates that increases as a function of N. The special case of finding the parity of N qubits only requires a small number of operations that is independent of N. This compares favorably to algorithms for computing the parity on conventional machines, which implies a genuine quantum advantage.

SPIN-COSY: Spin-Manipulating Polarized Deuterons and Protons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leonova, M. A.; Chao, A. W.; Krisch, A. D.

2009-08-04

We studied spin manipulation of 1.85 GeV/c polarized deuteron beam stored in COSY obtaining a spin-flip efficiency of 97{+-}1%. We first discovered experimentally and then explained theoretically interesting behavior of the deuteron tensor polarization. We, for the first time, studied systematically spin resonance strengths induced by rf dipoles and solenoids. We found huge disagreements between the strengths measured in controlled Froissart-Stora sweeps and the theoretical values calculated using the well-known formulae. These data instigated re-examination of these formulae. We tested Chao's proposed new matrix formalism for describing the spin dynamics due to a single spin resonance, which may be themore » first fundamental improvement of the Froissart-Stora equation in that it allows analytic calculation of the beam polarization's behavior inside a resonance. Our measurements of the deuteron's polarization near and inside the resonance agreed precisely with the Chao formalism's predicted oscillations. We tested Kondratenko's proposal to overcome depolarizing resonances by ramping through them with a crossing pattern, which should force the depolarizing contributions to cancel themselves. Our first test of this idea with 2.1 GeV/c protons was not conclusive but a later test with 1.85 GeV/c deuterons demonstrated a rather substantial reduction in the depolarization compared to the tune jump at the same rate.« less

Spin transport in lateral structures with semiconducting channel

NASA Astrophysics Data System (ADS)

Zainuddin, Abu Naser

Spintronics is an emerging field of electronics with the potential to be used in future integrated circuits. Spintronic devices are already making their mark in storage technologies in recent times and there are proposals for using spintronic effects in logic technologies as well. So far, major improvement in spintronic effects, for example, the `spin-valve' effect, is being achieved in metals or insulators as channel materials. But not much progress is made in semiconductors owing to the difficulty in injecting spins into them, which has only very recently been overcome with the combined efforts of many research groups around the world. The key motivations for semiconductor spintronics are their ease in integration with the existing semiconductor technology along with the gate controllability. At present semiconductor based spintronic devices are mostly lateral and are showing a very poor performance compared to their metal or insulator based vertical counterparts. The objective of this thesis is to analyze these devices based on spin-transport models and simulations. At first a lateral spin-valve device is modeled with the spin-diffusion equation based semiclassical approach. Identifying the important issues regarding the device performance, a compact circuit equivalent model is presented which would help to improve the device design. It is found that the regions outside the current path also have a significant influence on the device performance under certain conditions, which is ordinarily neglected when only charge transport is considered. Next, a modified spin-valve structure is studied where the spin signal is controlled with a gate in between the injecting and detecting contacts. The gate is used to modulate the rashba spin-orbit coupling of the channel which, in turn, modulates the spin-valve signal. The idea of gate controlled spin manipulation was originally proposed by Datta and Das back in 1990 and is called 'Datta-Das' effect. In this thesis, we have

Spin Transport in Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Schoenenberger, Christian

2005-03-01

We report on spin transport in carbon nanotubes. First, spin injection in arc-discharge grown multi-walled carbon nanotubes (MWNTs) is achieved by using a ferromagnetic PdNi alloy as contact material. The two contacts, i.e. source and drain, have different shape rendering different magnetic switching fields. Typical two-terminal resistances are in the range of 5-100 kOhm. We find a tunneling magneto resistance (TMR) signal amounting to 2.5-3%. Secondly, we explore the TMR signal as a function of temperature T, source-drain voltage Vsd, and gate voltage Vg. As expected the TMR signal decays with T and Vsd. Remarkably, however, we find a sign change in the spin signal (the TMR signal) as a function of both Vsd and Vg. This work has been done in collaboration with: S. Sahoo and T. Kontos (Univ. of Basel), C. Sürgers (Univ. of Karlsruhe), and L. Forro (EPFL Lausanne).

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

Efficient calculation of nuclear spin-rotation constants from auxiliary density functional theory.

PubMed

Zuniga-Gutierrez, Bernardo; Camacho-Gonzalez, Monica; Bendana-Castillo, Alfonso; Simon-Bastida, Patricia; Calaminici, Patrizia; Köster, Andreas M

2015-09-14

The computation of the spin-rotation tensor within the framework of auxiliary density functional theory (ADFT) in combination with the gauge including atomic orbital (GIAO) scheme, to treat the gauge origin problem, is presented. For the spin-rotation tensor, the calculation of the magnetic shielding tensor represents the most demanding computational task. Employing the ADFT-GIAO methodology, the central processing unit time for the magnetic shielding tensor calculation can be dramatically reduced. In this work, the quality of spin-rotation constants obtained with the ADFT-GIAO methodology is compared with available experimental data as well as with other theoretical results at the Hartree-Fock and coupled-cluster level of theory. It is found that the agreement between the ADFT-GIAO results and the experiment is good and very similar to the ones obtained by the coupled-cluster single-doubles-perturbative triples-GIAO methodology. With the improved computational performance achieved, the computation of the spin-rotation tensors of large systems or along Born-Oppenheimer molecular dynamics trajectories becomes feasible in reasonable times. Three models of carbon fullerenes containing hundreds of atoms and thousands of basis functions are used for benchmarking the performance. Furthermore, a theoretical study of temperature effects on the structure and spin-rotation tensor of the H(12)C-(12)CH-DF complex is presented. Here, the temperature dependency of the spin-rotation tensor of the fluorine nucleus can be used to identify experimentally the so far unknown bent isomer of this complex. To the best of our knowledge this is the first time that temperature effects on the spin-rotation tensor are investigated.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

NASA Astrophysics Data System (ADS)

Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

2017-08-01

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Dramatically Enhanced Spin Dynamo with Plasmonic Diabolo Cavity.

PubMed

Gou, Peng; Qian, Jie; Xi, Fuchun; Zou, Yuexin; Cao, Jun; Yu, Haochi; Zhao, Ziyi; Yang, Le; Xu, Jie; Wang, Hengliang; Zhang, Lijian; An, Zhenghua

2017-07-13

The applications of spin dynamos, which could potentially power complex nanoscopic devices, have so far been limited owing to their extremely low energy conversion efficiencies. Here, we present a unique plasmonic diabolo cavity (PDC) that dramatically improves the spin rectification signal (enhancement of more than three orders of magnitude) under microwave excitation; further, it enables an energy conversion efficiency of up to ~0.69 mV/mW, compared with ~0.27 μV/mW without a PDC. This remarkable improvement arises from the simultaneous enhancement of the microwave electric field (~13-fold) and the magnetic field (~195-fold), which cooperate in the spin precession process generates photovoltage (PV) efficiently under ferromagnetic resonance (FMR) conditions. The interplay of the microwave electromagnetic resonance and the ferromagnetic resonance originates from a hybridized mode based on the plasmonic resonance of the diabolo structure and Fabry-Perot-like modes in the PDC. Our work sheds light on how more efficient spin dynamo devices for practical applications could be realized and paves the way for future studies utilizing both artificial and natural magnetism for applications in many disciplines, such as for the design of future efficient wireless energy conversion devices, high frequent resonant spintronic devices, and magnonic metamaterials.

Spin-dependent transport phenomena in organic semiconductors

NASA Astrophysics Data System (ADS)

Bergeson, Jeremy D.

Thin-film organic semiconductors transport can have an anomalously high sensitivity to low magnetic fields. Such a response is unexpected considering that thermal fluctuation energies are greater than the energy associated with the intrinsic spin of charge carriers at a modest magnetic field of 100 Oe by a factor of more than 104 at room temperature and is still greater by 102 even at liquid helium temperatures. Nevertheless, we report experimental characterization of (1) spin-dependent injection, detection and transport of spin-polarized current through organic semiconductors and (2) the influence of a magnetic field on the spin dynamics of recombination-limited transport. The first focus of this work was accomplished by fabricating basic spin-valve devices consisting of two magnetic layers spatially separated by a nonmagnetic organic semiconductor. The spin-valve effect is a change in electrical resistance due to the magnetizations of the magnetic layers changing from parallel to antiparallel alignment, or vice versa. The conductivities of the metallic contacts and that of the semiconductor differed by many orders of magnitude, which inhibited the injection of a spin-polarized current from the magnet into the nonmagnet. We successfully overcame the problem of conductivity mismatch by inserting ultra-thin tunnel barriers at the metal/semiconductor interfaces which aided in yielding a ˜20% spin-valve effect at liquid helium temperatures and the effect persisted up to 150 K. We built on this achievement by constructing spin valves where one of the metallic contacts was replaced by the organic-based magnetic semiconductor vanadium tetracyanoethylene (V[TCNE]2). At 10 K these devices produced the switching behavior of the spin-valve effect. The second focus of this work was the bulk magnetoresistance (MR) of small molecule, oligomer and polymer organic semiconductors in thin-film structures. At room temperature the resistance can change up to 8% at 100 Oe and 15% at

All-electric spin modulator based on a two-dimensional topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo; Ai, Guoping; Liu, Ying

2016-01-18

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarizationmore » rotator by replacing the drain electrode with a non-magnetic material.« less

Controlling Gilbert damping in a YIG film using nonlocal spin currents

NASA Astrophysics Data System (ADS)

Haidar, M.; Dürrenfeld, P.; Ranjbar, M.; Balinsky, M.; Fazlali, M.; Dvornik, M.; Dumas, R. K.; Khartsev, S.; Åkerman, J.

2016-11-01

We demonstrate the control of Gilbert damping in 65-nm-thick yttrium iron garnet (YIG) films using a spin-polarized current generated by a direct current through a nanocontact, spin filtered by a thin Co layer. The magnetodynamics of both the YIG and the Co layers can be excited by a pulse-modulated microwave current injected through the nanocontact and the response detected as a lock-in amplified voltage over the device. The spectra show three clear peaks, two associated with the ferromagnetic resonance (FMR) in each layer, and an additional Co mode with a higher wave vector proportional to the inverse of the nanocontact diameter. By varying the sign and magnitude of the direct nanocontact current, we can either increase or decrease the linewidth of the YIG FMR peak consistent with additional positive or negative damping being exerted by the nonlocal spin current injected into the YIG film. Our nanocontact approach thus offers an alternative route in the search for auto-oscillations in YIG films.

A spin current rectifier

NASA Astrophysics Data System (ADS)

Eyni, Zahra; Mohammadpour, Hakimeh

2017-12-01

Current modulation and rectification is an important subject of electronics as well as spintronics. In this paper, an efficient rectifying mesoscopic device is introduced. The device is a two terminal device on the 2D plane of electron gas. The lateral contacts are half-metal ferromagnetic with antiparallel magnetizations and the central channel region is taken as ferromagnetic or normal in the presence of an applied magnetic field. The device functionality is based on the modification of spin-current by tuning the strength of the magnetic field or equivalently by the exchange coupling of the channel to the substrate. The result is that the (spin-) current depends on the polarity of the bias voltage. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. We analyze the results in terms of the spin-dependent barrier in the channel. Detecting the strength of the magnetic field by spin polarization is also suggested.

Optimal Charge-to-Spin Conversion in Graphene on Transition-Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Offidani, Manuel; Milletarı, Mirco; Raimondi, Roberto; Ferreira, Aires

2017-11-01

When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this work, we show that the characteristic spin winding of low-energy states in graphene on a TMD monolayer enables current-driven spin polarization, a phenomenon known as the inverse spin galvanic effect (ISGE). By introducing a proper figure of merit, we quantify the efficiency of charge-to-spin conversion and show it is close to unity when the Fermi level approaches the spin minority band. Remarkably, at high electronic density, even though subbands with opposite spin helicities are occupied, the efficiency decays only algebraically. The giant ISGE predicted for graphene on TMD monolayers is robust against disorder and remains large at room temperature.

Spin-orbit proximity effect in graphene

NASA Astrophysics Data System (ADS)

Avsar, A.; Tan, J. Y.; Taychatanapat, T.; Balakrishnan, J.; Koon, G. K. W.; Yeo, Y.; Lahiri, J.; Carvalho, A.; Rodin, A. S.; O'Farrell, E. C. T.; Eda, G.; Castro Neto, A. H.; Özyilmaz, B.

2014-09-01

The development of spintronics devices relies on efficient generation of spin-polarized currents and their electric-field-controlled manipulation. While observation of exceptionally long spin relaxation lengths makes graphene an intriguing material for spintronics studies, electric field modulation of spin currents is almost impossible due to negligible intrinsic spin-orbit coupling of graphene. In this work, we create an artificial interface between monolayer graphene and few-layer semiconducting tungsten disulphide. In these devices, we observe that graphene acquires spin-orbit coupling up to 17 meV, three orders of magnitude higher than its intrinsic value, without modifying the structure of the graphene. The proximity spin-orbit coupling leads to the spin Hall effect even at room temperature, and opens the door to spin field effect transistors. We show that intrinsic defects in tungsten disulphide play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.

Collisional Penrose process with spinning particles

NASA Astrophysics Data System (ADS)

Mukherjee, Sajal

2018-03-01

In this article, we have investigated collisional Penrose process (CPP) using spinning particles in a Kerr spacetime. Recent studies have shown that the collision between two spinning particles can produce a significantly high energy in the center of mass frame. Here, we explicitly compute the energy extraction and efficiency as measured by an observer at infinity. We consider the colliding particles as well as the escaping particles may contain spins. It has been shown that the energy extraction is larger than the non-spinning case and also their possibility to escape to infinity is wider than the geodesics.

Efficient Organometallic Spin Filter between Single-Wall Carbon Nanotube or Graphene Electrodes

NASA Astrophysics Data System (ADS)

Koleini, Mohammad; Paulsson, Magnus; Brandbyge, Mads

2007-05-01

We present a theoretical study of spin transport in a class of molecular systems consisting of an organometallic benzene-vanadium cluster placed in between graphene or single-wall carbon-nanotube-model contacts. Ab initio modeling is performed by combining spin density functional theory and nonequilibrium Green’s function techniques. We consider weak and strong cluster-contact bonds. Depending on the bonding we find from 73% (strong bonds) up to 99% (weak bonds) spin polarization of the electron transmission, and enhanced polarization with increased cluster length.

Gate-Driven Pure Spin Current in Graphene

NASA Astrophysics Data System (ADS)

Lin, Xiaoyang; Su, Li; Si, Zhizhong; Zhang, Youguang; Bournel, Arnaud; Zhang, Yue; Klein, Jacques-Olivier; Fert, Albert; Zhao, Weisheng

2017-09-01

The manipulation of spin current is a promising solution for low-power devices beyond CMOS. However, conventional methods, such as spin-transfer torque or spin-orbit torque for magnetic tunnel junctions, suffer from large power consumption due to frequent spin-charge conversions. An important challenge is, thus, to realize long-distance transport of pure spin current, together with efficient manipulation. Here, the mechanism of gate-driven pure spin current in graphene is presented. Such a mechanism relies on the electrical gating of carrier-density-dependent conductivity and spin-diffusion length in graphene. The gate-driven feature is adopted to realize the pure spin-current demultiplexing operation, which enables gate-controllable distribution of the pure spin current into graphene branches. Compared with the Elliott-Yafet spin-relaxation mechanism, the D'yakonov-Perel spin-relaxation mechanism results in more appreciable demultiplexing performance. The feature of the pure spin-current demultiplexing operation will allow a number of logic functions to be cascaded without spin-charge conversions and open a route for future ultra-low-power devices.

Pure spin current manipulation in antiferromagnetically exchange coupled heterostructures

NASA Astrophysics Data System (ADS)

Avilés-Félix, L.; Butera, A.; González-Chávez, D. E.; Sommer, R. L.; Gómez, J. E.

2018-03-01

We present a model to describe the spin currents generated by ferromagnet/spacer/ferromagnet exchange coupled trilayer systems and heavy metal layers with strong spin-orbit coupling. By exploiting the magnitude of the exchange coupling (oscillatory RKKY-like coupling) and the spin-flop transition in the magnetization process, it has been possible to produce spin currents polarized in arbitrary directions. The spin-flop transition of the trilayer system originates pure spin currents whose polarization vector depends on the exchange field and the magnetization equilibrium angles. We also discuss a protocol to control the polarization sign of the pure spin current injected into the metallic layer by changing the initial conditions of magnetization of the ferromagnetic layers previously to the spin pumping and inverse spin Hall effect experiments. The small differences in the ferromagnetic layers lead to a change in the magnetization vector rotation that permits the control of the sign of the induced voltage components due to the inverse spin Hall effect. Our results can lead to important advances in hybrid spintronic devices with new functionalities, particularly, the ability to control microscopic parameters such as the polarization direction and the sign of the pure spin current through the variation of macroscopic parameters, such as the external magnetic field or the thickness of the spacer in antiferromagnetic exchange coupled systems.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie; Chen, Zhaoxia

2014-06-14

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Furthermore » study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.« less

Kondo Physics at Interfaces in Metallic Non-Local Spin Transport Devices

NASA Astrophysics Data System (ADS)

Leighton, Chris

2015-03-01

Despite the maturity of metallic spintronics there remain large gaps in our understanding of spin transport in metals, particularly with injection of spins across ferromagnetic/non-magnetic (FM/NM) interfaces, and their subsequent diffusion and relaxation. Unresolved issues include the limits of applicability of Elliott-Yafet spin relaxation, quantification of the influence of defects, surfaces, and interfaces on spin relaxation at nanoscopic dimensions, and the importance of magnetic and spin-orbit scattering. The non-local spin-valve is an enabling device in this context as, in addition to offering potentially disruptive applications, it allows for the separation of charge and spin currents. One particularly perplexing issue in metallic non-local spin valves is the widely observed non-monotonicity in the T-dependent spin accumulation, where the spin signal actually decreases at low T, in contrast to simple expectations. In this work, by studying an expanded range of FM/NM combinations (encompassing Ni80Fe20, Ni, Fe, Co, Cu, and Al), we demonstrate that this effect is not a property of a given FM or NM, but rather of the FM/NM pair. The non-monotonicity is in fact strongly correlated with the ability of the FM to form a dilute local magnetic moment in the NM. We show that local moments, resulting in this case from the ppm-level tail of the FM/NM interdiffusion profile, suppress the injected spin polarization and diffusion length via a novel manifestation of the Kondo effect, explaining all observations associated with the low T downturn in spin accumulation. We further show: (a) that this effect can be promoted by thermal annealing, at which point the conventional charge transport Kondo effect is simultaneously detected in the NM, and (b) that this suppression in spin accumulation can be quenched, even at interfaces that are highly susceptible to the effect, by insertion of a thin non-moment-supporting interlayer. Important implications for room temperature

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

NASA Astrophysics Data System (ADS)

Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

2014-05-01

Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

Charge-induced spin torque in Weyl semimetals

NASA Astrophysics Data System (ADS)

Kurebayashi, Daichi; Nomura, Kentaro

In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

Sonographically guided posteromedial approach for intra-articular knee injections: a safe, accurate, and efficient method.

PubMed

Tresley, Jonathan; Jose, Jean

2015-04-01

Osteoarthritis of the knee can be a debilitating and extremely painful condition. In patients who desire to postpone knee arthroplasty or in those who are not surgical candidates, percutaneous knee injection therapies have the potential to reduce pain and swelling, maintain joint mobility, and minimize disability. Published studies cite poor accuracy of intra-articular knee joint injections without imaging guidance. We present a sonographically guided posteromedial approach to intra-articular knee joint injections with 100% accuracy and no complications in a consecutive series of 67 patients undergoing subsequent computed tomographic or magnetic resonance arthrography. Although many other standard approaches are available, a posteromedial intra-articular technique is particularly useful in patients with a large body habitus and theoretically allows for simultaneous aspiration of Baker cysts with a single sterile preparation and without changing the patient's position. The posteromedial technique described in this paper is not compared or deemed superior to other standard approaches but, rather, is presented as a potentially safe and efficient alternative. © 2015 by the American Institute of Ultrasound in Medicine.

Peculiarities of magnetic and spin effects in a biradical/stable radical complex (three-spin system). Theory and comparison with experiment.

PubMed

Magin, Ilya M; Purtov, Petr A; Kruppa, Alexander I; Leshina, Tatiana V

2005-08-25

The field dependencies of biradical recombination probability in the presence of paramagnetic species with spins S(3) = 1 and S(3) = (1)/(2) have been calculated in the framework of the density matrix formalism. To describe the effect of the "third" spin on the spin evolution in biradical, we have also considered the spin exchange interaction between the added spin and one of the paramagnetic biradical centers. A characteristic feature of the calculated field dependencies is the existence of several extrema with positions and magnitudes depending on the signs and values of the exchange integrals in the system. The method proposed can be used to describe the effect of spin catalysis. It is shown that for the system with the third spin S(3) = 1 spin catalysis manifests itself stronger than in the case of spin S(3) = (1)/(2). The dependence of spin catalysis efficiency on the exchange interaction with the third spin has an extremum with position independent of the value of the spin added.

Spin-Caloritronic Batteries

NASA Astrophysics Data System (ADS)

Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang; Jauho, A.-P.

2017-11-01

The thermoelectric performance of a topological energy converter is analyzed. The H -shaped device is based on a combination of transverse topological effects involving the spin: the inverse spin Hall effect and the spin Nernst effect. The device can convert a temperature drop in one arm into an electric power output in the other arm. Analytical expressions for the output voltage, the figure of merit (Z T ), and energy-converting efficiency are reported. We show that the output voltage and the Z T can be tuned by the geometry of the device and the physical properties of the material. Importantly, contrary to a conventional thermoelectric device, here a low electric conductivity may, in fact, enhance the Z T value, thereby opening a path to strategies in optimizing the figure of merit.

Quasiparticle-mediated spin Hall effect in a superconductor.

PubMed

Wakamura, T; Akaike, H; Omori, Y; Niimi, Y; Takahashi, S; Fujimaki, A; Maekawa, S; Otani, Y

2015-07-01

In some materials the competition between superconductivity and magnetism brings about a variety of unique phenomena such as the coexistence of superconductivity and magnetism in heavy-fermion superconductors or spin-triplet supercurrent in ferromagnetic Josephson junctions. Recent observations of spin-charge separation in a lateral spin valve with a superconductor evidence that these remarkable properties are applicable to spintronics, although there are still few works exploring this possibility. Here, we report the experimental observation of the quasiparticle-mediated spin Hall effect in a superconductor, NbN. This compound exhibits the inverse spin Hall (ISH) effect even below the superconducting transition temperature. Surprisingly, the ISH signal increases by more than 2,000 times compared with that in the normal state with a decrease of the injected spin current. The effect disappears when the distance between the voltage probes becomes larger than the charge imbalance length, corroborating that the huge ISH signals measured are mediated by quasiparticles.

Micro-focused Brillouin light scattering study of the magnetization dynamics driven by Spin Hall effect in a transversely magnetized NiFe nanowire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madami, M., E-mail: marco.madami@fisica.unipg.it; Carlotti, G.; Gubbiotti, G.

2015-05-07

We employed micro-focused Brillouin light scattering to study the amplification of the thermal spin wave eigenmodes by means of a pure spin current, generated by the spin-Hall effect, in a transversely magnetized Pt(4 nm)/NiFe(4 nm)/SiO{sub 2}(5 nm) layered nanowire with lateral dimensions 500 × 2750 nm{sup 2}. The frequency and the cross section of both the center (fundamental) and the edge spin wave modes have been measured as a function of the intensity of the injected dc electric current. The frequency of both modes exhibits a clear redshift while their cross section is greatly enhanced on increasing the intensity of the injected dc. A threshold-like behaviormore » is observed for a value of the injected dc of 2.8 mA. Interestingly, an additional mode, localized in the central part of the nanowire, appears at higher frequency on increasing the intensity of the injected dc above the threshold value. Micromagnetic simulations were used to quantitatively reproduce the experimental results and to investigate the complex non-linear dynamics induced by the spin-Hall effect, including the modification of the spatial profile of the spin wave modes and the appearance of the extra mode above the threshold.« less

Two spinning ways for precession dynamo.

PubMed

Cappanera, L; Guermond, J-L; Léorat, J; Nore, C

2016-04-01

It is numerically demonstrated by means of a magnetohydrodynamic code that precession can trigger dynamo action in a cylindrical container. Fixing the angle between the spin and the precession axis to be 1/2π, two limit configurations of the spinning axis are explored: either the symmetry axis of the cylinder is parallel to the spin axis (this configuration is henceforth referred to as the axial spin case), or it is perpendicular to the spin axis (this configuration is referred to as the equatorial spin case). In both cases, the centro-symmetry of the flow breaks when the kinetic Reynolds number increases. Equatorial spinning is found to be more efficient in breaking the centro-symmetry of the flow. In both cases, the average flow in the reference frame of the mantle converges to a counter-rotation with respect to the spin axis as the Reynolds number grows. We find a scaling law for the average kinetic energy in term of the Reynolds number in the axial spin case. In the equatorial spin case, the unsteady asymmetric flow is shown to be capable of sustaining dynamo action in the linear and nonlinear regimes. The magnetic field is mainly dipolar in the equatorial spin case, while it is is mainly quadrupolar in the axial spin case.

Homoepitaxial graphene tunnel barriers for spin transport

NASA Astrophysics Data System (ADS)

Friedman, Adam

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. We demonstrate successful tunneling, charge, and spin transport with a fluorinated graphene tunnel barrier on a graphene channel. We show that while spin transport stops short of room temperature, spin polarization efficiency values are the highest of any graphene spin devices. We also demonstrate that hydrogenation of graphene can also be used to create a tunnel barrier. We begin with a four-layer stack of graphene and hydrogenate the top few layers to decouple them from the graphene transport channel beneath. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies. The measured spin polarization efficiencies for hydrogenated graphene are higher than most oxide tunnel barriers on graphene, but not as high as with fluorinated graphene tunnel barriers. However, here we show that spin transport persists up to room temperature. Our results for the hydrogenated graphene tunnel barriers are compared with fluorinated tunnel barriers and we discuss the

Spin caloritronic nano-oscillator

DOE PAGES

Safranski, C.; Barsukov, I.; Lee, H. K.; ...

2017-07-18

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Spin caloritronic nano-oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safranski, C.; Barsukov, I.; Lee, H. K.

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Disorder induced spin coherence in polyfluorene thin film semiconductors

NASA Astrophysics Data System (ADS)

Miller, Richard G.; van Schooten, Kipp; Malissa, Hans; Waters, David P.; Lupton, John M.; Boehme, Christoph

2014-03-01

Charge carrier spins in polymeric organic semiconductors significantly influence magneto-optoelectronic properties of these materials. In particular, spin relaxation times influence magnetoresistance and electroluminescence. We have studied the role of structural and electronic disorder in polaron spin-relaxation times. As a model polymer, we used polyfluorene, which can exist in two distinct morphologies: an amorphous (glassy) and an ordered (beta) phase. The phases can be controlled in thin films by preparation parameters and verified by photoluminescence spectroscopy. We conducted pulsed electrically detected magnetic resonance (pEDMR) measurements to determine spin-dephasing times by transient current measurements under bipolar charge carrier injection conditions and a forward bias. The measurements showed that, contrary to intuition, spin-dephasing times increase with material disorder. We attribute this behavior to a reduction in hyperfine field strength for carriers in the glassy phase due to increased structural disorder in the hydrogenated side chains, leading to longer spin coherence times. We acknowledge support by the Department of Energy, Office of Basic Energy Sciences under Award #DE-SC0000909.

Tuning Interfacial States Using Organic Molecules as Spin Filters

NASA Astrophysics Data System (ADS)

Deloach, Andrew; Wang, Jingying; Papa, Christopher M.; Myahkostupov, Mykhaylo; Castellano, Felix N.; Dougherty, Daniel B.; Jiang, Wei; Liu, Feng

Organic semiconductors are known to have long spin relaxation times which makes them a good candidate for spintronics. However, an issue with these materials is that at metal-organic interfaces there is a conductivity mismatch problem that suppresses spin injection. To overcome this, orbital mixing at the interface can be tuned with an organic spacer layer to promote the formation of spin polarized interface states. These states act as a ``spin filters'' and have been proposed as an explanation for the large tunneling magnetoresistance seen in devices using tris-(8-hydroxyquinolate)-aluminum(Alq3). Here, we show that the spin polarized interface states can be tuned from metallic to resistive by subtle changes in molecular orbitals. This is done using spin polarized scanning tunneling microscopy with three different tris-(8-hydroxyquinolate) compounds: aluminum, chromium, and iron. Differences in d-orbital mixing results in different mechanisms of interfacial coupling, giving rise to metallic or resistive interface states. Supported by the U.S. DoE award No. DE-SC0010324.

Highly efficient spin polarizer based on individual heterometallic cubane single-molecule magnets

NASA Astrophysics Data System (ADS)

Dong, Damin

2015-09-01

The spin-polarized transport across a single-molecule magnet [Mn3Zn(hmp)3O(N3)3(C3H5O2)3].2CHCl3 has been investigated using a density functional theory combined with Keldysh non-equilibrium Green's function formalism. It is shown that this single-molecule magnet has perfect spin filter behaviour. By adsorbing Ni3 cluster onto non-magnetic Au electrode, a large magnetoresistance exceeding 172% is found displaying molecular spin valve feature. Due to the tunneling via discrete quantum-mechanical states, the I-V curve has a stepwise character and negative differential resistance behaviour.

Pure detection of the acoustic spin pumping in Pt/YIG/PZT structures

NASA Astrophysics Data System (ADS)

Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Saitoh, Eiji

2014-11-01

The acoustic spin pumping (ASP) stands for the generation of a spin voltage from sound waves in a ferromagnet/paramagnet junction. In this letter, we propose and demonstrate a method for pure detection of the ASP, which enables the separation of sound-wave-driven spin currents from the spin Seebeck effect due to the heating of a sample caused by a sound-wave injection. Our demonstration using a Pt/YIG/PZT sample shows that the ASP signal in this structure measured by a conventional method is considerably offset by the heating signal and that the pure ASP signal is one order of magnitude greater than that reported in the previous study.

Spin-enhanced organic bulk heterojunction photovoltaic solar cells.

PubMed

Zhang, Ye; Basel, Tek P; Gautam, Bhoj R; Yang, Xiaomei; Mascaro, Debra J; Liu, Feng; Vardeny, Z Valy

2012-01-01

Recently, much effort has been devoted to improve the efficiency of organic photovoltaic solar cells based on blends of donors and acceptors molecules in bulk heterojunction architecture. One of the major losses in organic photovoltaic devices has been recombination of polaron pairs at the donor-acceptor domain interfaces. Here, we present a novel method to suppress polaron pair recombination at the donor-acceptor domain interfaces and thus improve the organic photovoltaic solar cell efficiency, by doping the device active layer with spin 1/2 radical galvinoxyl. At an optimal doping level of 3 wt%, the efficiency of a standard poly(3-hexylthiophene)/1-(3-(methoxycarbonyl)propyl)-1-1-phenyl)(6,6)C(61) solar cell improves by 18%. A spin-flip mechanism is proposed and supported by magneto-photocurrent measurements, as well as by density functional theory calculations in which polaron pair recombination rate is suppressed by resonant exchange interaction between the spin 1/2 radicals and charged acceptors, which convert the polaron pair spin state from singlet to triplet.

Bilayer avalanche spin-diode logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien; Fadel, Eric R.

2015-11-15

A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

Spin-controlled ultrafast vertical-cavity surface-emitting lasers

NASA Astrophysics Data System (ADS)

Höpfner, Henning; Lindemann, Markus; Gerhardt, Nils C.; Hofmann, Martin R.

2014-05-01

Spin-controlled semiconductor lasers are highly attractive spintronic devices providing characteristics superior to their conventional purely charge-based counterparts. In particular, spin-controlled vertical-cavity surface emitting lasers (spin-VCSELs) promise to offer lower thresholds, enhanced emission intensity, spin amplification, full polarization control, chirp control and ultrafast dynamics. Most important, the ability to control and modulate the polarization state of the laser emission with extraordinarily high frequencies is very attractive for many applications like broadband optical communication and ultrafast optical switches. We present a novel concept for ultrafast spin-VCSELs which has the potential to overcome the conventional speed limitation for directly modulated lasers by the relaxation oscillation frequency and to reach modulation frequencies significantly above 100 GHz. The concept is based on the coupled spin-photon dynamics in birefringent micro-cavity lasers. By injecting spin-polarized carriers in the VCSEL, oscillations of the coupled spin-photon system can by induced which lead to oscillations of the polarization state of the laser emission. These oscillations are decoupled from conventional relaxation oscillations of the carrier-photon system and can be much faster than these. Utilizing these polarization oscillations is thus a very promising approach to develop ultrafast spin-VCSELs for high speed optical data communication in the near future. Different aspects of the spin and polarization dynamics, its connection to birefringence and bistability in the cavity, controlled switching of the oscillations, and the limitations of this novel approach will be analysed theoretically and experimentally for spin-polarized VCSELs at room temperature.

Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

PubMed

Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

2011-10-28

The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

Perspective: Interface generation of spin-orbit torques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.

We present that most of the modern spintronics developments rely on the manipulation of magnetization states via electric currents, which started with the discovery of spin transfer torque effects 20 years ago. By now, it has been realized that spin-orbit coupling provides a particularly efficient pathway for generating spin torques from charge currents. At the same time, spin-orbit effects can be enhanced at interfaces, which opens up novel device concepts. Here, we discuss two examples of such interfacial spin-orbit torques, namely, systems with inherently two-dimensional materials and metallic bilayers with strong Rashba spin-orbit coupling at their interfaces. We show howmore » ferromagnetic resonance excited by spin-orbit torques can provide information about the underlying mechanisms. In addition, this article provides a brief overview of recent developments with respect to interfacial spin-orbit torques and an outlook of still open questions.« less

Perspective: Interface generation of spin-orbit torques

DOE PAGES

Sklenar, Joseph; Zhang, Wei; Jungfleisch, Matthias B.; ...

2016-11-14

We present that most of the modern spintronics developments rely on the manipulation of magnetization states via electric currents, which started with the discovery of spin transfer torque effects 20 years ago. By now, it has been realized that spin-orbit coupling provides a particularly efficient pathway for generating spin torques from charge currents. At the same time, spin-orbit effects can be enhanced at interfaces, which opens up novel device concepts. Here, we discuss two examples of such interfacial spin-orbit torques, namely, systems with inherently two-dimensional materials and metallic bilayers with strong Rashba spin-orbit coupling at their interfaces. We show howmore » ferromagnetic resonance excited by spin-orbit torques can provide information about the underlying mechanisms. In addition, this article provides a brief overview of recent developments with respect to interfacial spin-orbit torques and an outlook of still open questions.« less

Extrinsic spin Hall effect in graphene

NASA Astrophysics Data System (ADS)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

EVOLUTION OF SPINNING AND BRAIDING HELICITY FLUXES IN SOLAR ACTIVE REGION NOAA 10930

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravindra, B.; Yoshimura, Keiji; Dasso, Sergio, E-mail: ravindra@iiap.res.in, E-mail: yosimura@solar.physics.montana.edu, E-mail: dasso@df.uba.ar

2011-12-10

The line-of-sight magnetograms from Solar Optical Telescope Narrowband Filter Imager observations of NOAA Active Region 10930 have been used to study the evolution of spinning and braiding helicities over a period of five days starting from 2006 December 9. The north (N) polarity sunspot was the follower and the south (S) polarity sunspot was the leader. The N-polarity sunspot in the active region was rotating in the counterclockwise direction. The rate of rotation was small during the first two days of observations and it increased up to 8 Degree-Sign hr{sup -1} on the third day of the observations. On themore » fourth and fifth days it remained at 4 Degree-Sign hr{sup -1} with small undulations in its magnitude. The sunspot rotated about 260 Degree-Sign in the last three days. The S-polarity sunspot did not complete more than 20 Degree-Sign in five days. However, it changed its direction of rotation five times over a period of five days and injected both the positive and negative type of spin helicity fluxes into the corona. Through the five days, both the positive and negative sunspot regions injected equal amounts of spin helicity. The total injected helicity is predominantly negative in sign. However, the sign of the spin and braiding helicity fluxes computed over all the regions were reversed from negative to positive five times during the five-day period of observations. The reversal in spinning helicity flux was found before the onset of the X3.4-class flare, too. Though, the rotating sunspot has been observed in this active region, the braiding helicity has contributed more to the total accumulated helicity than the spinning helicity. The accumulated helicity is in excess of -7 Multiplication-Sign 10{sup 43} Mx{sup 2} over a period of five days. Before the X3.4-class flare that occurred on 2006 December 13, the rotation speed and spin helicity flux increased in the S-polarity sunspot. Before the flare, the total injected helicity was larger than -6

Electron refrigeration in hybrid structures with spin-split superconductors

NASA Astrophysics Data System (ADS)

Rouco, M.; Heikkilä, T. T.; Bergeret, F. S.

2018-01-01

Electron tunneling between superconductors and normal metals has been used for an efficient refrigeration of electrons in the latter. Such cooling is a nonlinear effect and usually requires a large voltage. Here we study the electron cooling in heterostructures based on superconductors with a spin-splitting field coupled to normal metals via spin-filtering barriers. The cooling power shows a linear term in the applied voltage. This improves the coefficient of performance of electron refrigeration in the normal metal by shifting its optimum cooling to lower voltage, and also allows for cooling the spin-split superconductor by reverting the sign of the voltage. We also show how tunnel coupling spin-split superconductors with regular ones allows for a highly efficient refrigeration of the latter.

Modification of the magnetization dynamics of a NiFe nanodot due to thermal spin injection

NASA Astrophysics Data System (ADS)

Asam, Nagarjuna; Yamanoi, Kazuto; Kimura, Takashi

2018-06-01

An array of NiFe nanodots has been prepared on a Cu/CoFeAl film. Since a thermal spin current is expected to be excited owing to a large spin-dependent Seebeck coefficient for the CoFeAl, we investigate the magnetization dynamics of the NiFe dots under the temperature gradient along the vertical direction. By using vector network analyzer measurements, we have demonstrated that the temperature gradient produces modulations of the frequency of ferromagnetic resonance and the linewidth of the resonance spectra. The observed parabolic dependences are well explained by the damping-like and field-like components of spin transfer torque.

Measurement of skeletal muscle perfusion dynamics with pseudo-continuous arterial spin labeling (pCASL): Assessment of relative labeling efficiency at rest and during hyperemia, and comparison to pulsed arterial spin labeling (PASL).

PubMed

Englund, Erin K; Rodgers, Zachary B; Langham, Michael C; Mohler, Emile R; Floyd, Thomas F; Wehrli, Felix W

2016-10-01

To compare calf skeletal muscle perfusion measured with pulsed arterial spin labeling (PASL) and pseudo-continuous arterial spin labeling (pCASL) methods, and to assess the variability of pCASL labeling efficiency in the popliteal artery throughout an ischemia-reperfusion paradigm. At 3T, relative pCASL labeling efficiency was experimentally assessed in five subjects by measuring the signal intensity of blood in the popliteal artery just distal to the labeling plane immediately following pCASL labeling or control preparation pulses, or without any preparation pulses throughout separate ischemia-reperfusion paradigms. The relative label and control efficiencies were determined during baseline, hyperemia, and recovery. In a separate cohort of 10 subjects, pCASL and PASL sequences were used to measure reactive hyperemia perfusion dynamics. Calculated pCASL labeling and control efficiencies did not differ significantly between baseline and hyperemia or between hyperemia and recovery periods. Relative to the average baseline, pCASL label efficiency was 2 ± 9% lower during hyperemia. Perfusion dynamics measured with pCASL and PASL did not differ significantly (P > 0.05). Average leg muscle peak perfusion was 47 ± 20 mL/min/100g or 50 ± 12 mL/min/100g, and time to peak perfusion was 25 ± 3 seconds and 25 ± 7 seconds from pCASL and PASL data, respectively. Differences of further metrics parameterizing the perfusion time course were not significant between pCASL and PASL measurements (P > 0.05). No change in pCASL labeling efficiency was detected despite the almost 10-fold increase in average blood flow velocity in the popliteal artery. pCASL and PASL provide precise and consistent measurement of skeletal muscle reactive hyperemia perfusion dynamics. J. MAGN. RESON. IMAGING 2016;44:929-939. © 2016 International Society for Magnetic Resonance in Medicine.

The spin-Hall effect and spin-orbit torques in epitaxial Co2FeAl/platinum bilayers

NASA Astrophysics Data System (ADS)

Peterson, T. A.; Liu, C.; McFadden, T.; Palmstrøm, C. J.; Crowell, P. A.

We have performed magnetoresistance measurements on epitaxially grown Co2FeAl/platinum (CFA/Pt) ultrathin ferromagnet/heavy metal bilayers to study the spin-Hall effect in Pt and the accompanying spin-orbit torque (SOT) exerted on the magnetic CFA layer. Specifically, we measure the spin-Hall magnetoresistance in the Pt layer by changing the orientation of the CFA magnetization with respect to the spin current orientation created in the Pt, and we determine the SOT efficiency using a second-harmonic detection technique. Because the latter of the two measurements is proportional to the spin-Hall ratio θSHE while the former is proportional to θSHE2, we are able to extract the bare Pt spin-Hall ratio with no assumptions about the CFA/Pt interface spin mixing conductance. Furthermore, by varying the Pt thickness we show that the results are consistent with resistivity-independent spin-Hall conductivity. Finally, the two measurements in combination allow us to infer a spin-mixing conductance at the CFA/Pt interface of 2 +/- 1 ×1015Ω-1m-2 . The combination of spin-Hall magnetoresistance and SOT measurements allows for a determination of the spin-mixing conductance using only low-frequency transport techniques. This work was supported by STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Spin-orbit scattering visualized in quasiparticle interference

NASA Astrophysics Data System (ADS)

Kohsaka, Y.; Machida, T.; Iwaya, K.; Kanou, M.; Hanaguri, T.; Sasagawa, T.

2017-03-01

In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons—spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle interference (QPI) imaged by spectroscopic-imaging scanning tunneling microscopy. The experimental data of a polar semiconductor BiTeI are well reproduced by numerical simulations with the T -matrix formalism that include not only scalar scattering normally adopted but also spin-orbit scattering stronger than scalar scattering. To accelerate the simulations, we extend the standard efficient method of QPI calculation for momentum-independent scattering to be applicable even for spin-orbit scattering. We further identify a selection rule that makes spin-orbit scattering visible in the QPI pattern. These results demonstrate that spin-orbit scattering can exert predominant influence on QPI patterns and thus suggest that QPI measurement is available to detect spin-orbit scattering.

Injection-controlled laser resonator

DOEpatents

Chang, J.J.

1995-07-18

A new injection-controlled laser resonator incorporates self-filtering and self-imaging characteristics with an efficient injection scheme. A low-divergence laser signal is injected into the resonator, which enables the injection signal to be converted to the desired resonator modes before the main laser pulse starts. This injection technique and resonator design enable the laser cavity to improve the quality of the injection signal through self-filtering before the main laser pulse starts. The self-imaging property of the present resonator reduces the cavity induced diffraction effects and, in turn, improves the laser beam quality. 5 figs.

Injection-controlled laser resonator

DOEpatents

Chang, Jim J.

1995-07-18

A new injection-controlled laser resonator incorporates self-filtering and self-imaging characteristics with an efficient injection scheme. A low-divergence laser signal is injected into the resonator, which enables the injection signal to be converted to the desired resonator modes before the main laser pulse starts. This injection technique and resonator design enable the laser cavity to improve the quality of the injection signal through self-filtering before the main laser pulse starts. The self-imaging property of the present resonator reduces the cavity induced diffraction effects and, in turn, improves the laser beam quality.

Strong Enhancement of the Spin Hall Effect by Spin Fluctuations near the Curie Point of FexPt1 -x Alloys

NASA Astrophysics Data System (ADS)

Ou, Yongxi; Ralph, D. C.; Buhrman, R. A.

2018-03-01

Robust spin Hall effects (SHE) have recently been observed in nonmagnetic heavy metal systems with strong spin-orbit interactions. These SHE are either attributed to an intrinsic band-structure effect or to extrinsic spin-dependent scattering from impurities, namely, side jump or skew scattering. Here we report on an extraordinarily strong spin Hall effect, attributable to spin fluctuations, in ferromagnetic FexPt1 -x alloys near their Curie point, tunable with x . This results in a dampinglike spin-orbit torque being exerted on an adjacent ferromagnetic layer that is strongly temperature dependent in this transition region, with a peak value that indicates a lower bound 0.34 ±0.02 for the peak spin Hall ratio within the FePt. We also observe a pronounced peak in the effective spin-mixing conductance of the FM /FePt interface, and determine the spin diffusion length in these FexPt1 -x alloys. These results establish new opportunities for fundamental studies of spin dynamics and transport in ferromagnetic systems with strong spin fluctuations, and a new pathway for efficiently generating strong spin currents for applications.

Generation of heralded entanglement between distant quantum dot hole spins

NASA Astrophysics Data System (ADS)

Delteil, Aymeric

Entanglement plays a central role in fundamental tests of quantum mechanics as well as in the burgeoning field of quantum information processing. Particularly in the context of quantum networks and communication, some of the major challenges are the efficient generation of entanglement between stationary (spin) and propagating (photon) qubits, the transfer of information from flying to stationary qubits, and the efficient generation of entanglement between distant stationary (spin) qubits. In this talk, I will present such experimental implementations achieved in our team with semiconductor self-assembled quantum dots.Not only are self-assembled quantum dots good single-photon emitters, but they can host an electron or a hole whose spin serves as a quantum memory, and then present spin-dependent optical selection rules leading to an efficient spin-photon quantum interface. Moreover InGaAs quantum dots grown on GaAs substrate can profit from the maturity of III-V semiconductor technology and can be embedded in semiconductor structures like photonic cavities and Schottky diodes.I will report on the realization of heralded quantum entanglement between two semiconductor quantum dot hole spins separated by more than five meters. The entanglement generation scheme relies on single photon interference of Raman scattered light from both dots. A single photon detection projects the system into a maximally entangled state. We developed a delayed two-photon interference scheme that allows for efficient verification of quantum correlations. Moreover the efficient spin-photon interface provided by self-assembled quantum dots allows us to reach an unprecedented rate of 2300 entangled spin pairs per second, which represents an improvement of four orders of magnitude as compared to prior experiments carried out in other systems.Our results extend previous demonstrations in single trapped ions or neutral atoms, in atom ensembles and nitrogen vacancy centers to the domain of

Promoting Charge Separation and Injection by Optimizing the Interfaces of GaN:ZnO Photoanode for Efficient Solar Water Oxidation.

PubMed

Wang, Zhiliang; Zong, Xu; Gao, Yuying; Han, Jingfeng; Xu, Zhiqiang; Li, Zheng; Ding, Chunmei; Wang, Shengyang; Li, Can

2017-09-13

Photoelectrochemical water splitting provides an attractive way to store solar energy in molecular hydrogen as a kind of sustainable fuel. To achieve high solar conversion efficiency, the most stringent criteria are effective charge separation and injection in electrodes. Herein, efficient photoelectrochemical water oxidation is realized by optimizing charge separation and surface charge transfer of GaN:ZnO photoanode. The charge separation can be greatly improved through modified moisture-assisted nitridation and HCl acid treatment, by which the interfaces in GaN:ZnO solid solution particles are optimized and recombination centers existing at the interfaces are depressed in GaN:ZnO photoanode. Moreover, a multimetal phosphide of NiCoFeP was employed as water oxidation cocatalyst to improve the charge injection at the photoanode/electrolyte interface. Consequently, it significantly decreases the overpotential and brings the photocurrent to a benchmark of 3.9 mA cm -2 at 1.23 V vs RHE and a solar conversion efficiency over 1% was obtained.

Effect of air injection under subsurface drip irrigation on yield and water use efficiency of corn in a sandy clay loam soil

PubMed Central

Abuarab, Mohamed; Mostafa, Ehab; Ibrahim, Mohamed

2012-01-01

Subsurface drip irrigation (SDI) can substantially reduce the amount of irrigation water needed for corn production. However, corn yields need to be improved to offset the initial cost of drip installation. Air-injection is at least potentially applicable to the (SDI) system. However, the vertical stream of emitted air moving above the emitter outlet directly toward the surface creates a chimney effect, which should be avoided, and to ensure that there are adequate oxygen for root respiration. A field study was conducted in 2010 and 2011, to evaluate the effect of air-injection into the irrigation stream in SDI on the performance of corn. Experimental treatments were drip irrigation (DI), SDI, and SDI with air injection. The leaf area per plant with air injected was 1.477 and 1.0045 times greater in the aerated treatment than in DI and SDI, respectively. Grain filling was faster, and terminated earlier under air-injected drip system, than in DI. Root distribution, stem diameter, plant height and number of grains per plant were noticed to be higher under air injection than DI and SDI. Air injection had the highest water use efficiency (WUE) and irrigation water use efficiency (IWUE) in both growing seasons; with values of 1.442 and 1.096 in 2010 and 1.463 and 1.112 in 2011 for WUE and IWUE respectively. In comparison with DI and SDI, the air injection treatment achieved a significantly higher productivity through the two seasons. Yield increases due to air injection were 37.78% and 12.27% greater in 2010 and 38.46% and 12.5% in 2011 compared to the DI and SDI treatments, respectively. Data from this study indicate that corn yield can be improved under SDI if the drip water is aerated. PMID:25685457

Spin-Driven Emergent Antiferromagnetism and Metal-Insulator Transition in Nanoscale p-Si

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

Room-temperature storage of quantum entanglement using decoherence-free subspace in a solid-state spin system

NASA Astrophysics Data System (ADS)

Wang, F.; Huang, Y.-Y.; Zhang, Z.-Y.; Zu, C.; Hou, P.-Y.; Yuan, X.-X.; Wang, W.-B.; Zhang, W.-G.; He, L.; Chang, X.-Y.; Duan, L.-M.

2017-10-01

We experimentally demonstrate room-temperature storage of quantum entanglement using two nuclear spins weakly coupled to the electronic spin carried by a single nitrogen-vacancy center in diamond. We realize universal quantum gate control over the three-qubit spin system and produce entangled states in the decoherence-free subspace of the two nuclear spins. By injecting arbitrary collective noise, we demonstrate that the decoherence-free entangled state has coherence time longer than that of other entangled states by an order of magnitude in our experiment.

Discrimination between spin-dependent charge transport and spin-dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance

NASA Astrophysics Data System (ADS)

Kavand, Marzieh; Baird, Douglas; van Schooten, Kipp; Malissa, Hans; Lupton, John M.; Boehme, Christoph

2016-08-01

Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is not straightforward to differentiate between pure single-carrier spin-dependent transport processes which control the current and therefore the electroluminescence, and spin-dependent electron-hole recombination which determines the electroluminescence yield and in turn modulates the current. We therefore investigate the correlation between the dynamics of spin-dependent electric current and spin-dependent electroluminescence in two derivatives of the conjugated polymer poly(phenylene-vinylene) using simultaneously measured pulsed electrically detected (pEDMR) and optically detected (pODMR) magnetic resonance spectroscopy. This experimental approach requires careful analysis of the transient response functions under optical and electrical detection. At room temperature and under bipolar charge-carrier injection conditions, a correlation of the pEDMR and the pODMR signals is observed, consistent with the hypothesis that the recombination currents involve spin-dependent electronic transitions. This observation is inconsistent with the hypothesis that these signals are caused by spin-dependent charge-carrier transport. These results therefore provide no evidence that supports earlier claims that spin-dependent transport plays a role for room-temperature magnetoresistance effects. At low temperatures, however, the correlation between pEDMR and pODMR is weakened, demonstrating that more than one spin-dependent process influences the optoelectronic materials' properties. This conclusion is consistent with prior studies of half-field resonances that were attributed to spin-dependent triplet exciton recombination, which becomes significant at low temperatures when the triplet lifetime increases.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

NASA Astrophysics Data System (ADS)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.

PubMed

Korenev, V L; Akimov, I A; Zaitsev, S V; Sapega, V F; Langer, L; Yakovlev, D R; Danilov, Yu A; Bayer, M

2012-07-17

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Solution-processed organic spin-charge converter.

PubMed

Ando, Kazuya; Watanabe, Shun; Mooser, Sebastian; Saitoh, Eiji; Sirringhaus, Henning

2013-07-01

Conjugated polymers and small organic molecules are enabling new, flexible, large-area, low-cost optoelectronic devices, such as organic light-emitting diodes, transistors and solar cells. Owing to their exceptionally long spin lifetimes, these carbon-based materials could also have an important impact on spintronics, where carrier spins play a key role in transmitting, processing and storing information. However, to exploit this potential, a method for direct conversion of spin information into an electric signal is indispensable. Here we show that a pure spin current can be produced in a solution-processed conducting polymer by pumping spins through a ferromagnetic resonance in an adjacent magnetic insulator, and that this generates an electric voltage across the polymer film. We demonstrate that the experimental characteristics of the generated voltage are consistent with it being generated through an inverse spin Hall effect in the conducting polymer. In contrast with inorganic materials, the conducting polymer exhibits coexistence of high spin-current to charge-current conversion efficiency and long spin lifetimes. Our discovery opens a route for a new generation of molecular-structure-engineered spintronic devices, which could lead to important advances in plastic spintronics.

Computation of indirect nuclear spin-spin couplings with reduced complexity in pure and hybrid density functional approximations.

PubMed

Luenser, Arne; Kussmann, Jörg; Ochsenfeld, Christian

2016-09-28

We present a (sub)linear-scaling algorithm to determine indirect nuclear spin-spin coupling constants at the Hartree-Fock and Kohn-Sham density functional levels of theory. Employing efficient integral algorithms and sparse algebra routines, an overall (sub)linear scaling behavior can be obtained for systems with a non-vanishing HOMO-LUMO gap. Calculations on systems with over 1000 atoms and 20 000 basis functions illustrate the performance and accuracy of our reference implementation. Specifically, we demonstrate that linear algebra dominates the runtime of conventional algorithms for 10 000 basis functions and above. Attainable speedups of our method exceed 6 × in total runtime and 10 × in the linear algebra steps for the tested systems. Furthermore, a convergence study of spin-spin couplings of an aminopyrazole peptide upon inclusion of the water environment is presented: using the new method it is shown that large solvent spheres are necessary to converge spin-spin coupling values.

Spin-polarized currents in a two-terminal double quantum ring driven by magnetic fields and Rashba spin-orbit interaction

NASA Astrophysics Data System (ADS)

Dehghan, E.; Khoshnoud, D. Sanavi; Naeimi, A. S.

2018-06-01

Aim of this study is to investigate spin transportation in double quantum ring (DQR). We developed an array of DQR to measure the transmission coefficient and analyze the spin transportation through this system in the presence of Rashba spin-orbit interaction (RSOI) and magnetic flux estimated using S-matrix method. In this article, we compute the spin transport and spin-current characteristics numerically as functions of electron energy, angles between the leads, coupling constant of the leads, RSOI, and magnetic flux. Our results suggest that, for typical values of the magnetic flux (ϕ /ϕ0) and Rashba constant (αR), such system can demonstrates many spintronic properties. It is possible to design a new geometry of DQR by incoming electrons polarization in a way to optimize the system to work as a spin-filtering and spin-inverting nano-device with very high efficiency. The results prove that the spin current will strongly modulate with an increase in the magnetic flux and Rashba constant. Moreover it is shown that, when the lead coupling is weak, the perfect spin-inverter does not occur.

Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.

PubMed

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong

2015-12-04

Light-emitting diode (LED) efficiency has attracted considerable interest because of the extended use of solid-state lighting. Owing to lack of direct measurement, identification of the reasons for efficiency droop has been restricted. A direct measurement technique is developed in this work for characterization of biaxial stress in GaN-based blue LEDs under electrical injection. The Raman shift of the GaN E2 mode evidently decreases by 4.4 cm(-1) as the driving current on GaN-based LEDs increases to 700 mA. Biaxial compressive stress is released initially and biaxial tensile stress builds up as the current increases with respect to the value of stress-free GaN. First-principles calculations reveal that electron accumulation is responsible for the stress variation in InxGa1-xN/GaN quantum wells, and then reduces the transition probability among quantum levels. This behavior is consistent with the measured current-dependent external quantum efficiency. The rule of biaxial stress-dependent efficiency is further validated by controlling the biaxial stress of GaN-based LEDs with different sapphire substrate thicknesses. This work provides a method for direct observation of the biaxial stress effect on efficiency droop in LEDs under electrical injection.

Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection

PubMed Central

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong

2015-01-01

Light-emitting diode (LED) efficiency has attracted considerable interest because of the extended use of solid-state lighting. Owing to lack of direct measurement, identification of the reasons for efficiency droop has been restricted. A direct measurement technique is developed in this work for characterization of biaxial stress in GaN-based blue LEDs under electrical injection. The Raman shift of the GaN E2 mode evidently decreases by 4.4 cm−1 as the driving current on GaN-based LEDs increases to 700 mA. Biaxial compressive stress is released initially and biaxial tensile stress builds up as the current increases with respect to the value of stress-free GaN. First-principles calculations reveal that electron accumulation is responsible for the stress variation in InxGa1−xN/GaN quantum wells, and then reduces the transition probability among quantum levels. This behavior is consistent with the measured current-dependent external quantum efficiency. The rule of biaxial stress-dependent efficiency is further validated by controlling the biaxial stress of GaN-based LEDs with different sapphire substrate thicknesses. This work provides a method for direct observation of the biaxial stress effect on efficiency droop in LEDs under electrical injection. PMID:26634816

The Bach equations in spin-coefficient form

NASA Astrophysics Data System (ADS)

Forbes, Hamish

2018-06-01

Conformal gravity theories are defined by field equations that determine only the conformal structure of the spacetime manifold. The Bach equations represent an early example of such a theory, we present them here in component form in terms of spin- and boost-weighted spin-coefficients using the compacted spin-coefficient formalism. These equations can be used as an efficient alternative to the standard tensor form. As a simple application we solve the Bach equations for pp-wave and static spherically symmetric spacetimes.

Laboratory Study of the Displacement Coalbed CH4 Process and Efficiency of CO2 and N2 Injection

PubMed Central

Wang, Liguo; Wang, Yongkang

2014-01-01

ECBM displacement experiments are a direct way to observe the gas displacement process and efficiency by inspecting the produced gas composition and flow rate. We conducted two sets of ECBM experiments by injecting N2 and CO2 through four large parallel specimens (300 × 50 × 50 mm coal briquette). N2 or CO2 is injected at pressures of 1.5, 1.8, and 2.2 MPa and various crustal stresses. The changes in pressure along the briquette and the concentration of the gas mixture flowing out of the briquette were analyzed. Gas injection significantly enhances CBM recovery. Experimental recoveries of the original extant gas are in excess of 90% for all cases. The results show that the N2 breakthrough occurs earlier than the CO2 breakthrough. The breakthrough time of N2 is approximately 0.5 displaced volumes. Carbon dioxide, however, breaks through at approximately 2 displaced volumes. Coal can adsorb CO2, which results in a slower breakthrough time. In addition, ground stress significantly influences the displacement effect of the gas injection. PMID:24741346

Spin transport in epitaxial graphene

NASA Astrophysics Data System (ADS)

Tbd, -

2014-03-01

Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

Spin density and orbital optimization in open shell systems: A rational and computationally efficient proposal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giner, Emmanuel, E-mail: gnrmnl@unife.it; Angeli, Celestino, E-mail: anc@unife.it

2016-03-14

The present work describes a new method to compute accurate spin densities for open shell systems. The proposed approach follows two steps: first, it provides molecular orbitals which correctly take into account the spin delocalization; second, a proper CI treatment allows to account for the spin polarization effect while keeping a restricted formalism and avoiding spin contamination. The main idea of the optimization procedure is based on the orbital relaxation of the various charge transfer determinants responsible for the spin delocalization. The algorithm is tested and compared to other existing methods on a series of organic and inorganic open shellmore » systems. The results reported here show that the new approach (almost black-box) provides accurate spin densities at a reasonable computational cost making it suitable for a systematic study of open shell systems.« less

An electro-optical and electron injection study of benzothiazole-based squaraine dyes as efficient dye-sensitized solar cell materials: a first principles study.

PubMed

Al-Fahdan, Najat Saeed; Asiri, Abdullah M; Irfan, Ahmad; Basaif, Salem A; El-Shishtawy, Reda M

2014-12-01

Squaraine dyes have attracted significant attention in many areas of daily life from biomedical imaging to semiconducting materials. Moreover, these dyes are used as photoactive materials in the field of solar cells. In the present study, we investigated the structural, electronic, photophysical, and charge transport properties of six benzothiazole-based squaraine dyes (Cis-SQ1-Cis-SQ3 and Trans-SQ1-Trans-SQ3). The effect of electron donating (-OCH3) and electron withdrawing (-COOH) groups was investigated intensively. Ground state geometry and frequency calculations were performed by applying density functional theory (DFT) at B3LYP/6-31G** level of theory. Absorption spectra were computed in chloroform at the time-dependent DFT/B3LYP/6-31G** level of theory. The driving force of electron injection (ΔG (inject)), relative driving force of electron injection (ΔG r (inject)), electronic coupling constants (|VRP|) and light harvesting efficiency (LHE) of all six compounds were calculated and compared with previously studied sensitizers. The ΔG (inject), ΔG r (inject) and |VRP| of all six compounds revealed that these sensitizers would be efficient dye-sensitized solar cell materials. Cis/Trans-SQ3 exhibited superior LHE as compared to other derivatives. The Cis/Trans geometric effect was studied and discussed with regard to electro-optical and charge transport properties.

Entangled spins and ghost-spins

NASA Astrophysics Data System (ADS)

Jatkar, Dileep P.; Narayan, K.

2017-09-01

We study patterns of quantum entanglement in systems of spins and ghost-spins regarding them as simple quantum mechanical toy models for theories containing negative norm states. We define a single ghost-spin as in [20] as a 2-state spin variable with an indefinite inner product in the state space. We find that whenever the spin sector is disentangled from the ghost-spin sector (both of which could be entangled within themselves), the reduced density matrix obtained by tracing over all the ghost-spins gives rise to positive entanglement entropy for positive norm states, while negative norm states have an entanglement entropy with a negative real part and a constant imaginary part. However when the spins are entangled with the ghost-spins, there are new entanglement patterns in general. For systems where the number of ghost-spins is even, it is possible to find subsectors of the Hilbert space where positive norm states always lead to positive entanglement entropy after tracing over the ghost-spins. With an odd number of ghost-spins however, we find that there always exist positive norm states with negative real part for entanglement entropy after tracing over the ghost-spins.

Conversion of spin current into charge current in a topological insulator: Role of the interface

NASA Astrophysics Data System (ADS)

Dey, Rik; Prasad, Nitin; Register, Leonard F.; Banerjee, Sanjay K.

2018-05-01

Three-dimensional spin current density injected onto the surface of a topological insulator (TI) produces a two-dimensional charge current density on the surface of the TI, which is the so-called inverse Edelstein effect (IEE). The ratio of the surface charge current density on the TI to the spin current density injected across the interface defined as the IEE length was shown to be exactly equal to the mean free path in the TI determined to be independent of the electron transmission rate across the interface [Phys. Rev. B 94, 184423 (2016), 10.1103/PhysRevB.94.184423]. However, we find that the transmission rate across the interface gives a nonzero contribution to the transport relaxation rate in the TI as well as to the effective IEE relaxation rate (over and above any surface hybridization effects), and the IEE length is always less than the original mean free path in the TI without the interface. We show that both the IEE relaxation time and the transport relaxation time in the TI are modified by the interface transmission time. The correction becomes significant when the transmission time across the interface becomes comparable to or less than the original momentum scattering time in the TI. This correction is similar to experimental results in Rashba electron systems in which the IEE relaxation time was found shorter in the case of direct interface with metal in which the interface transmission rate will be much higher, compared to interfaces incorporating insulating oxides. Our results indicate the continued importance of the interface to obtain a better spin-to-charge current conversion and a limitation to the conversion efficiency due to the quality of the interface.

Comparison between spin-orbit torques measured by domain-wall motions and harmonic measurements

NASA Astrophysics Data System (ADS)

Kim, Joo-Sung; Nam, Yune-Seok; Kim, Dae-Yun; Park, Yong-Keun; Park, Min-Ho; Choe, Sug-Bong

2018-05-01

Here we report the comparison of the spin torque efficiencies measured by three different experimental schemes for Pt/Co/X stacks with material X (= Pt, Ta, Ti, Al, Au, Pd, and Ru. 7 materials). The first two spin torque efficiencies ɛDW (1 ) and ɛDW (2 ) are quantified by the measurement of spin-torque-induced effective field for domain-wall depinning and creeping motions, respectively. The last one—longitudinal spin torque efficiency ɛL—is measured by harmonic signal measurement of the magnetization rotation with uniform magnetization configuration. The results confirm that, for all measured Pt/Co/X stacks, ɛDW (1 ) and ɛDW (2 ) are exactly consistent to each other and these two efficiencies are roughly proportional to ɛL with proportionality constant π/2, which comes from the integration over the domain-wall configuration.

Widespread spin polarization effects in photoemission from topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations ofmore » photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.« less

Enhanced thermo-spin effects in iron-oxide/metal multilayers

NASA Astrophysics Data System (ADS)

Ramos, R.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Uchida, K.; Saitoh, E.; Ibarra, M. R.

2018-06-01

Since the discovery of the spin Seebeck effect (SSE), much attention has been devoted to the study of the interaction between heat, spin, and charge in magnetic systems. The SSE refers to the generation of a spin current upon the application of a thermal gradient and detected by means of the inverse spin Hall effect. Conversely, the spin Peltier effect (SPE) refers to the generation of a heat current as a result of a spin current induced by the spin Hall effect. Here we report a strong enhancement of both the SSE and SPE in Fe3O4/Pt multilayered thin films at room temperature as a result of an increased thermo-spin conversion efficiency in the multilayers. These results open the possibility to design thin film heterostructures that may boost the application of thermal spin currents in spintronics.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

NASA Astrophysics Data System (ADS)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Spin manipulating vector & tensor polarized deuterons stored in COSY

NASA Astrophysics Data System (ADS)

Morozov, V. S.; Krisch, A. D.; Leonova, M. A.; Raymond, R. S.; Sivers, D. W.; Wong, V. K.; Yonehara, K.; Gebel, R.; Lehrach, A.; Lorentz, B.; Maier, R.; Prasuhn, D.; Schnase, A.; Stockhorst, H.; Eversheim, D.; Hinterberger, F.; Rohdjess, H.; Ulbrich, K.

2006-04-01

We recently studied the spin manipulation of a simultaneously vector and tensor polarized deuteron beam stored at 1.85 GeV/c in the COSY Cooler Synchrotron. Using the EDDA detector, we first calibrated the vector and tensor analyzing powers, which were earlier unmeasured at 1.85 GeV/c; this allowed us to measure the absolute values of both the vector and tensor polarizations. Then we manipulated the deuteron's polarization by sweeping the frequency of a ferrite rf dipole through an rf-induced spin resonance. We first experimentally determined the resonance's frequency and then varied the rf dipole's frequency sweep range δf and frequency ramp time δt to maximize the spin-flip efficiency. We then obtained a measured vector spin-flip efficiency of 98.5 ± 0.3% [1]. We also studied, in detail, the behavior of the tensor polarization during spin manipulation; these new data may allow a better understanding of the interesting quantum behavior of spin-1 bosons. This research was supported by the German BMBF Science Ministry. [1] V.S. Morozov et al., Phys. Rev. ST Accel. Beams 8, 061001 (2005).

Spin-current-driven thermoelectric generation based on interfacial spin-orbit coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagmur, A., E-mail: ahmetyagmur@imr.tohoku.ac.jp; Iguchi, R.; Karube, S.

2016-06-13

The longitudinal spin Seebeck effect (SSE) in Bi{sub 2}O{sub 3}/Cu/yttrium-iron-garnet (YIG) devices has been investigated. When an out-of-plane temperature gradient is applied to the Bi{sub 2}O{sub 3}/Cu/YIG device, a spin current is generated across the Cu/YIG interface via the SSE and then converted into electric voltage due to the spin–orbit coupling at the Bi{sub 2}O{sub 3}/Cu interface. The sign of the SSE voltage in the Bi{sub 2}O{sub 3}/Cu/YIG devices is opposite to that induced by the conventional inverse spin Hall effect in Pt/YIG devices. The SSE voltage in the Bi{sub 2}O{sub 3}/Cu/YIG devices disappears in the absence of the Bi{submore » 2}O{sub 3} layer and its thermoelectric conversion efficiency is independent of the Cu thickness, indicating the important role of the Bi{sub 2}O{sub 3}/Cu interface. This result demonstrates that not only the bulk inverse spin Hall effect but also the spin–orbit coupling near the interface can be used for SSE-based thermoelectric generation.« less

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes.

PubMed

Le, Quyet Van; Kim, Jong Beom; Kim, Soo Young; Lee, Byeongdu; Lee, Dong Ryeol

2017-09-07

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX 3 (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

Laser-assisted metal spinning for an efficient and flexible processing of challenging materials

NASA Astrophysics Data System (ADS)

Brummer, C.; Eck, S.; Marsoner, S.; Arntz, K.; Klocke, F.

2016-03-01

The demand for components made from high performance materials like titanium or nickel-based alloys as well as strain-hardening stainless steel is steadily increasing. However, conventional forming operations conducted on these materials are generally very laborious and time-consuming. This is where the limitations of metal spinning also become apparent. Using a laser to apply heat localized to the forming zone during metal spinning facilitates to enhance the formability of a material. In order to analyse the potential of the new manufacturing process, experimental investigations on laser-assisted shear forming and multi-pass metal spinning have been performed with austenitic stainless steel X5CrNi18-10, nickel-based alloy Inconel 718 and titanium grade 2. It could be demonstrated that the formability of these materials can be enhanced by laser-assistance. Besides the resulting enhancement of forming limits for metal spinning of challenging materials, the forming forces were reduced and the product quality was improved significantly.

Tailoring Spin Textures in Complex Oxide Micromagnets

DOE PAGES

Lee, Michael S.; Wynn, Thomas A.; Folven, Erik; ...

2016-09-12

Engineered topological spin textures with submicron dimensions in magnetic materials have emerged in recent years as the building blocks for various spin-based memory devices. Examples of these magnetic configurations include magnetic skyrmions, vortices, and domain walls. Here in this paper, we show the ability to control and characterize the evolution of spin textures in complex oxide micromagnets as a function of temperature through the delicate balance of fundamental materials parameters, micromagnet geometries, and epitaxial strain. These results demonstrate that in order to fully describe the observed spin textures, it is necessary to account for the spatial variation of the magneticmore » parameters within the micromagnet. This study provides the framework to accurately characterize such structures, leading to efficient design of spin-based memory devices based on complex oxide thin films.« less

EPR spin trapping of oxygen radicals in plants: a methodological overview.

PubMed

Bacić, Goran; Mojović, Milos

2005-06-01

We present a brief account of the difficulties involved in detection of oxygen free radicals in plants and give a rationale for using the EPR spin trapping technique in such studies. Comparative analysis of characteristics of different spin traps is given, having in mind their suitability in trapping oxygen-centered free radicals. Certain technical aspects of EPR experiments related to successful trapping of free radicals are discussed. Previous studies of trapping of oxygen radicals in plants are reviewed in terms of how efficient the experimental approach employed has been in their detection and how this influences conclusions about the mechanisms of their production. In addition, we analyze the potential of spin labels in the analysis of free radical production in plants and demonstrate that the combination of EPR spin traps and spin labels is extremely efficient for this purpose.

Full control of the spin-wave damping in a magnetic insulator using spin orbit torque

NASA Astrophysics Data System (ADS)

Klein, Olivier

2015-03-01

The spin-orbit interaction (SOI) has been an interesting and useful addition in the field of spintronics by opening it to non-metallic magnet. It capitalizes on adjoining a strong SOI normal metal next to a thin magnetic layer. The SOI converts a charge current, Jc, into a spin current, Js, with an efficiency parametrized by ΘSH, the spin Hall angle. An important benefit of the SOI is that Jc and Js are linked through a cross-product, allowing a charge current flowing in-plane to produce a spin current flowing out-of-plane. Hence it enables the transfer of spin angular momentum to non-metallic materials and in particular to insulating oxides, which offer improved performance compared to their metallic counterparts. Among all oxides, Yttrium Iron Garnet (YIG) holds a special place for having the lowest known spin-wave (SW) damping factor. Until recently the transmission of spin current through the YIG|Pt interface has been subject to debate. While numerous experiments have reported that Js produced by the excitation of ferromagnetic resonance (FMR) in YIG can cross efficiently the YIG|Pt interface and be converted into Jc in Pt through the inverse spin Hall effect (ISHE), most attempts to observe the reciprocal effect, where Js produced in Pt by the direct spin Hall effect (SHE) is transferred to YIG, resulting in damping compensation, have failed. This has been raising fundamental questions about the reciprocity of the spin transparency of the interface between a metal and a magnetic insulator. In this talk it will be demonstrated that the threshold current for damping compensation can be reached in a 5 μm diameter YIG(20nm)|Pt(7nm) disk. Reduction of both the thickness and lateral size of a YIG-structure were key to reach the microwave generation threshold current, Jc*. The experimental evidence rests upon the measurement of the ferromagnetic resonance linewidth as a function of Idc using a magnetic resonance force microscope (MRFM). It is shwon that the

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

NASA Astrophysics Data System (ADS)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Role of spin diffusion in current-induced domain wall motion for disordered ferromagnets

NASA Astrophysics Data System (ADS)

Akosa, Collins Ashu; Kim, Won-Seok; Bisig, André; Kläui, Mathias; Lee, Kyung-Jin; Manchon, Aurélien

2015-03-01

Current-induced spin transfer torque and magnetization dynamics in the presence of spin diffusion in disordered magnetic textures is studied theoretically. We demonstrate using tight-binding calculations that weak, spin-conserving impurity scattering dramatically enhances the nonadiabaticity. To further explore this mechanism, a phenomenological drift-diffusion model for incoherent spin transport is investigated. We show that incoherent spin diffusion indeed produces an additional spatially dependent torque of the form ˜∇2[m ×(u .∇ ) m ] +ξ ∇2[(u .∇ ) m ] , where m is the local magnetization direction, u is the direction of injected current, and ξ is a parameter characterizing the spin dynamics (precession, dephasing, and spin-flip). This torque, which scales as the inverse square of the domain wall width, only weakly enhances the longitudinal velocity of a transverse domain wall but significantly enhances the transverse velocity of vortex walls. The spatial-dependent spin transfer torque uncovered in this study is expected to have significant impact on the current-driven motion of abrupt two-dimensional textures such as vortices, skyrmions, and merons.

Spin-Hall Switching of In-plane Exchange Biased Heterostructures

NASA Astrophysics Data System (ADS)

Mann, Maxwell; Beach, Geoffrey

The spin Hall effect (SHE) in heavy-metal/ferromagnet bilayers generates a pure transverse spin current from in-plane charge current, allowing for efficient switching of spintronic devices with perpendicular magnetic anisotropy. Here, we demonstrate that an AFM deposited adjacent to the FM establishes a large in-plane exchange bias field, allowing operation at zero HIP. We sputtered Pt(3nm)/Co(0.9nm)/Ni80Co20O(tAF) stacks at room-temperature in an in-plane magnetic field of 3 kOe. The current-induced effective field was estimated in Hall cross devices by measuring the variation of the out-of-plane switching field as a function of JIP and HIP. The spin torque efficiency, dHSL/dJIP, is measured versus HIP for a sample with tAF =30 nm, and for a control in which NiCoO is replaced by TaOx. In the latter, dHSL/dJIP varied linearly with HIP. In the former, dHSL/dJIP varied nonlinearly with HIP and exhibited an offset indicating nonzero spin torque efficiency with zero HIP. The magnitude of HEB was 600 Oe in-plane.

Synchronization of spin-transfer torque oscillators by spin pumping, inverse spin Hall, and spin Hall effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elyasi, Mehrdad; Bhatia, Charanjit S.; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg

2015-02-14

We have proposed a method to synchronize multiple spin-transfer torque oscillators based on spin pumping, inverse spin Hall, and spin Hall effects. The proposed oscillator system consists of a series of nano-magnets in junction with a normal metal with high spin-orbit coupling, and an accumulative feedback loop. We conduct simulations to demonstrate the effect of modulated charge currents in the normal metal due to spin pumping from each nano-magnet. We show that the interplay between the spin Hall effect and inverse spin Hall effect results in synchronization of the nano-magnets.

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

NASA Astrophysics Data System (ADS)

May, Brelon J.; Selcu, Camelia M.; Sarwar, A. T. M. G.; Myers, Roberto C.

2018-02-01

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of magnitude, with the top 10% of wires passing more than ×3.5 the current of nanowires without a TJ. This manifests at the macroscopic level as a reduction in threshold voltage by more than 3 V and an increase in differential conductance as a direct consequence of the integration of the TJ. These results show the utility of cAFM to quantitatively probe the electrical inhomogeneities in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps, opening the door to more rapid development of nanowire ensemble based photonics.

Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

NASA Astrophysics Data System (ADS)

Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

2016-10-01

Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

NASA Astrophysics Data System (ADS)

Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

2017-11-01

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

Material Targets for Scaling All-Spin Logic

NASA Astrophysics Data System (ADS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2016-01-01

All-spin-logic devices are promising candidates to augment and complement beyond-CMOS integrated circuit computing due to nonvolatility, ultralow operating voltages, higher logical efficiency, and high density integration. However, the path to reach lower energy-delay product performance compared to CMOS transistors currently is not clear. We show that scaling and engineering the nanoscale magnetic materials and interfaces is the key to realizing spin-logic devices that can surpass the energy-delay performance of CMOS transistors. With validated stochastic nanomagnetic and vector spin-transport numerical models, we derive the target material and interface properties for the nanomagnets and channels. We identify promising directions for material engineering and discovery focusing on the systematic scaling of magnetic anisotropy (Hk ) and saturation magnetization (Ms ), the use of perpendicular magnetic anisotropy, and the interface spin-mixing conductance of the ferromagnet-spin-channel interface (Gmix ). We provide systematic targets for scaling a spin-logic energy-delay product toward 2 aJ ns, comprehending the stochastic noise for nanomagnets.

Spin Imbalanced Quasi-Two-Dimensional Fermi Gases

NASA Astrophysics Data System (ADS)

Ong, Willie C.

Spin-imbalanced Fermi gases serve as a testbed for fundamental notions and are efficient table-top emulators of a variety of quantum matter ranging from neutron stars, the quark-gluon plasma, to high critical temperature superconductors. A macroscopic quantum phenomenon which occurs in spin-imbalanced Fermi gases is that of phase separation; in three dimensions, a spin-balanced, fully-paired superfluid core is surrounded by an imbalanced normal-fluid shell, followed by a fully polarized shell. In one dimension, the behavior is reversed; a balanced phase appears outside a spin-imbalanced core. This thesis details the first density profile measurements and studies on spin-imbalanced quasi-2D Fermi gases, accomplished with high-resolution, rapid sequential spin-imaging. The measured cloud radii and central densities are in disagreement with mean-field Bardeen-Cooper-Schrieffer theory for a 2D system. Data for normal-fluid mixtures are well fit by a simple 2D polaron model of the free energy. Not predicted by the model is an observed phase transition to a spin-balanced central core above a critical polarisation.

Spin-orbit beams for optical chirality measurement

NASA Astrophysics Data System (ADS)

Samlan, C. T.; Suna, Rashmi Ranjan; Naik, Dinesh N.; Viswanathan, Nirmal K.

2018-01-01

Accurate measurement of chirality is essential for the advancement of natural and pharmaceutical sciences. We report here a method to measure chirality using non-separable states of light with geometric phase-gradient in the circular polarization basis, which we refer to as spin-orbit beams. A modified polarization Sagnac interferometer is used to generate spin-orbit beams wherein the spin and orbital angular momentum of the input Gaussian beam are coupled. The out-of-phase interference between counter-propagating Gaussian beams with orthogonal spin states and lateral-shear or/and linear-phase difference between them results in spin-orbit beams with linear and azimuthal phase gradient. The spin-orbit beams interact efficiently with the chiral medium, inducing a measurable change in the center-of-mass of the beam, using the polarization rotation angle and hence the chirality of the medium are accurately calculated. Tunable dynamic range of measurement and flexibility to introduce large values of orbital angular momentum for the spin-orbit beam, to improve the measurement sensitivity, highlight the techniques' versatility.

First-principles study of high spin-polarization and thermoelectric efficiency of ferromagnetic CoFeCrAs quaternary Heusler alloy

NASA Astrophysics Data System (ADS)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-03-01

The ground state properties along with thermodynamic and thermoelectric properties of quaternary CoFeCrAs alloy within the ordered LiMgPdSn-type structure have been investigated by employing first-principles calculations. The alloy offers half-metallic ferromagnet character with an indirect band gap of 1.12 eV in the minority spin state with total spin magnetic moment of 4μB and follows Slater-Pauling relation. Effects on various properties of the material has been studied by the variation of the pressure and temperature. CoFeCrAs tenders large value of the Grüneisen parameter and small value for the thermal expansion coefficient. The materials present high Seebeck coefficient and huge power factor with the room temperature value of ∼-40 μV/K and 18 (1014 μWcm-1 K-2 s-1) respectively, which make CoFeCrAs promising candidate for efficient thermoelectric material.

CO2 Capture by Injection of Flue Gas or CO2-N2 Mixtures into Hydrate Reservoirs: Dependence of CO2 Capture Efficiency on Gas Hydrate Reservoir Conditions.

PubMed

Hassanpouryouzband, Aliakbar; Yang, Jinhai; Tohidi, Bahman; Chuvilin, Evgeny; Istomin, Vladimir; Bukhanov, Boris; Cheremisin, Alexey

2018-04-03

Injection of flue gas or CO 2 -N 2 mixtures into gas hydrate reservoirs has been considered as a promising option for geological storage of CO 2 . However, the thermodynamic process in which the CO 2 present in flue gas or a CO 2 -N 2 mixture is captured as hydrate has not been well understood. In this work, a series of experiments were conducted to investigate the dependence of CO 2 capture efficiency on reservoir conditions. The CO 2 capture efficiency was investigated at different injection pressures from 2.6 to 23.8 MPa and hydrate reservoir temperatures from 273.2 to 283.2 K in the presence of two different saturations of methane hydrate. The results showed that more than 60% of the CO 2 in the flue gas was captured and stored as CO 2 hydrate or CO 2 -mixed hydrates, while methane-rich gas was produced. The efficiency of CO 2 capture depends on the reservoir conditions including temperature, pressure, and hydrate saturation. For a certain reservoir temperature, there is an optimum reservoir pressure at which the maximum amount of CO 2 can be captured from the injected flue gas or CO 2 -N 2 mixtures. This finding suggests that it is essential to control the injection pressure to enhance CO 2 capture efficiency by flue gas or CO 2 -N 2 mixtures injection.

Correction of mid-spatial-frequency errors by smoothing in spin motion for CCOS

NASA Astrophysics Data System (ADS)

Zhang, Yizhong; Wei, Chaoyang; Shao, Jianda; Xu, Xueke; Liu, Shijie; Hu, Chen; Zhang, Haichao; Gu, Haojin

2015-08-01

Smoothing is a convenient and efficient way to correct mid-spatial-frequency errors. Quantifying the smoothing effect allows improvements in efficiency for finishing precision optics. A series experiments in spin motion are performed to study the smoothing effects about correcting mid-spatial-frequency errors. Some of them use a same pitch tool at different spinning speed, and others at a same spinning speed with different tools. Introduced and improved Shu's model to describe and compare the smoothing efficiency with different spinning speed and different tools. From the experimental results, the mid-spatial-frequency errors on the initial surface were nearly smoothed out after the process in spin motion and the number of smoothing times can be estimated by the model before the process. Meanwhile this method was also applied to smooth the aspherical component, which has an obvious mid-spatial-frequency error after Magnetorheological Finishing processing. As a result, a high precision aspheric optical component was obtained with PV=0.1λ and RMS=0.01λ.

Omnidirectional spin-wave nanograting coupler

PubMed Central

Yu, Haiming; Duerr, G.; Huber, R.; Bahr, M.; Schwarze, T.; Brandl, F.; Grundler, D.

2013-01-01

Magnonics as an emerging nanotechnology offers functionalities beyond current semiconductor technology. Spin waves used in cellular nonlinear networks are expected to speed up technologically, demanding tasks such as image processing and speech recognition at low power consumption. However, efficient coupling to microelectronics poses a vital challenge. Previously developed techniques for spin-wave excitation (for example, by using parametric pumping in a cavity) may not allow for the relevant downscaling or provide only individual point-like sources. Here we demonstrate that a grating coupler of periodically nanostructured magnets provokes multidirectional emission of short-wavelength spin waves with giantly enhanced amplitude compared with a bare microwave antenna. Exploring the dependence on ferromagnetic materials, lattice constants and the applied magnetic field, we find the magnonic grating coupler to be more versatile compared with gratings in photonics and plasmonics. Our results allow one to convert, in particular, straight microwave antennas into omnidirectional emitters for short-wavelength spin waves, which are key to cellular nonlinear networks and integrated magnonics. PMID:24189978

Efficient spin-filter and negative differential resistance behaviors in FeN4 embedded graphene nanoribbon device

NASA Astrophysics Data System (ADS)

Liu, N.; Liu, J. B.; Yao, K. L.; Ni, Y.; Wang, S. L.

2016-03-01

In this paper, we propose a new device of spintronics by embedding two FeN4 molecules into armchair graphene nanoribbon and sandwiching them between N-doped graphene nanoribbon electrodes. Our first-principle quantum transport calculations show that the device is a perfect spin filter with high spin-polarizations both in parallel configuration (PC) and antiparallel configuration (APC). Moreover, negative differential resistance phenomena are obtained for the spin-down current in PC, and the spin-up and spin-down currents in APC. These transport properties are explained by the bias-dependent evolution of molecular orbitals and the transmission spectra.

Effect of electron spin-spin interaction on level crossings and spin flips in a spin-triplet system

NASA Astrophysics Data System (ADS)

Jia, Wei; Hu, Fang-Qi; Wu, Ning; Zhao, Qing

2017-12-01

We study level crossings and spin flips in a system consisting of a spin-1 (an electron spin triplet) coupled to a nuclear spin of arbitrary size K , in the presence of a uniform magnetic field and the electron spin-spin interaction within the triplet. Through an analytical diagonalization based on the SU (3 ) Lie algebra, we find that the electron spin-spin interaction not only removes the curious degeneracy which appears in the absence of the interaction, but also produces some level anticrossings (LACs) for strong interactions. The real-time dynamics of the system shows that periodic spin flips occur at the LACs for arbitrary K , which might provide an option for nuclear or electron spin polarization.

Terahertz emission from ultrafast spin-charge current at a Rashba interface

NASA Astrophysics Data System (ADS)

Zhang, Qi; Jungfleisch, Matthias Benjamin; Zhang, Wei; Pearson, John E.; Wen, Haidan; Hoffmann, Axel

Ultrafast broadband terahertz (THz) radiation is highly desired in various fields from fundamental research in condensed matter physics to bio-chemical detection. Conventional ultrafast THz sources rely on either nonlinear optical effects or ultrafast charge currents in semiconductors. Recently, however, it was realized that ultrabroad-band THz radiation can be produced highly effectively by novel spintronics-based emitters that also make use of the electron's spin degree of freedom. Those THz-emitters convert a spin current flow into a terahertz electromagnetic pulse via the inverse spin-Hall effect. In contrast to this bulk conversion process, we demonstrate here that a femtosecond spin current pulse launched from a CoFeB layer can also generate terahertz transients efficiently at a two-dimensional Rashba interface between two non-magnetic materials, i.e., Ag/Bi. Those interfaces have been proven to be efficient means for spin- and charge current interconversion.

Geometrical control of pure spin current induced domain wall depinning.

PubMed

Pfeiffer, A; Reeve, R M; Voto, M; Savero-Torres, W; Richter, N; Vila, L; Attané, J P; Lopez-Diaz, L; Kläui, Mathias

2017-03-01

We investigate the pure spin-current assisted depinning of magnetic domain walls in half ring based Py/Al lateral spin valve structures. Our optimized geometry incorporating a patterned notch in the detector electrode, directly below the Al spin conduit, provides a tailored pinning potential for a transverse domain wall and allows for a precise control over the magnetization configuration and as a result the domain wall pinning. Due to the patterned notch, we are able to study the depinning field as a function of the applied external field for certain applied current densities and observe a clear asymmetry for the two opposite field directions. Micromagnetic simulations show that this can be explained by the asymmetry of the pinning potential. By direct comparison of the calculated efficiencies for different external field and spin current directions, we are able to disentangle the different contributions from the spin transfer torque, Joule heating and the Oersted field. The observed high efficiency of the pure spin current induced spin transfer torque allows for a complete depinning of the domain wall at zero external field for a charge current density of [Formula: see text] A m -2 , which is attributed to the optimal control of the position of the domain wall.

Spin-wave resonances and surface spin pinning in Ga1-xMnxAs thin films

NASA Astrophysics Data System (ADS)

Bihler, C.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2009-01-01

We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE PAGES

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide; ...

2017-11-16

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luengo-Kovac, Marta; Huang, Simon; Del Gaudio, Davide

Here, the current-induced spin polarization and momentum-dependent spin-orbit field were measured in In xGa 1-xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbitmore » coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.« less

Spin Transfer Torque in Spin Filter Tunnel Junctions

NASA Astrophysics Data System (ADS)

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mair

2014-03-01

STT in MTJs is well known for its potential spin electronic applications. However, recently a new class of MTJs based on spin filtering across magnetic insulators (SFTJ) has been attracting much attention since in such MTJs electrons with a certain spin orientation tunnel much more efficiently. In this structure, STT remains to be addressed and clarified. Here we present a systematic study of its angular and voltage bias dependences consisting of one or two FM layers separated by a magnetic insulator (MI). The calculations were performed within the tight-binding model using NEGF technique in the framework of Keldysh formalism. We predict that STT is higher in magnitude compared to regular MTJs, which strongly depends in the relative directions of the magnetic states of the free layer (FM2) and MI. Namely, in case of parallel orientation of MI and FM2 moments in a FM1|MI|FM2 structure, the system behaves as a regular MTJ with a modest increase of STT magnitude. However, as the angle between MI and FM2 moments increases, the field-like torque becomes three orders of magnitude higher than the Slonczewski component and oscillates with bias as band-filling increases. This may have practical implications.

Cavity-Enhanced Optical Readout of a Single Solid-State Spin

NASA Astrophysics Data System (ADS)

Sun, Shuo; Kim, Hyochul; Solomon, Glenn S.; Waks, Edo

2018-05-01

We demonstrate optical readout of a single spin using cavity quantum electrodynamics. The spin is based on a single trapped electron in a quantum dot that has a poor branching ratio of 0.43. Selectively coupling one of the optical transitions of the quantum dot to the cavity mode results in a spin-dependent cavity reflectivity that enables spin readout by monitoring the reflected intensity of an incident optical field. Using this approach, we demonstrate spin-readout fidelity of 0.61. Achieving this fidelity using resonance fluorescence from a bare dot would require 43 times improvement in photon collection efficiency.

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules.

PubMed

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-08-31

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices.

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules

PubMed Central

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-01-01

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices. PMID:27578395

Dynamic spin filtering at the Co/Alq3 interface mediated by weakly coupled second layer molecules

NASA Astrophysics Data System (ADS)

Droghetti, Andrea; Thielen, Philip; Rungger, Ivan; Haag, Norman; Großmann, Nicolas; Stöckl, Johannes; Stadtmüller, Benjamin; Aeschlimann, Martin; Sanvito, Stefano; Cinchetti, Mirko

2016-08-01

Spin filtering at organic-metal interfaces is often determined by the details of the interaction between the organic molecules and the inorganic magnets used as electrodes. Here we demonstrate a spin-filtering mechanism based on the dynamical spin relaxation of the long-living interface states formed by the magnet and weakly physisorbed molecules. We investigate the case of Alq3 on Co and, by combining two-photon photoemission experiments with electronic structure theory, show that the observed long-time spin-dependent electron dynamics is driven by molecules in the second organic layer. The interface states formed by physisorbed molecules are not spin-split, but acquire a spin-dependent lifetime, that is the result of dynamical spin-relaxation driven by the interaction with the Co substrate. Such spin-filtering mechanism has an important role in the injection of spin-polarized carriers across the interface and their successive hopping diffusion into successive molecular layers of molecular spintronics devices.

Estimating the spin diffusion length and the spin Hall angle from spin pumping induced inverse spin Hall voltages

NASA Astrophysics Data System (ADS)

Roy, Kuntal

2017-11-01

There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length with sufficient accuracy from experimental results. An inaccurate estimation of spin diffusion length also affects the estimation of other parameters (e.g., spin mixing conductance, spin Hall angle) concomitantly. The spin diffusion length for platinum (Pt) has been reported in the literature in a wide range of 0.5-14 nm, and in particular it is a constant value independent of Pt's thickness. Here, the key reasonings behind such a wide range of reported values of spin diffusion length have been identified comprehensively. In particular, it is shown here that a thickness-dependent conductivity and spin diffusion length is necessary to simultaneously match the experimental results of effective spin mixing conductance and inverse spin Hall voltage due to spin pumping. Such a thickness-dependent spin diffusion length is tantamount to the Elliott-Yafet spin relaxation mechanism, which bodes well for transitional metals. This conclusion is not altered even when there is significant interfacial spin memory loss. Furthermore, the variations in the estimated parameters are also studied, which is important for technological applications.

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

NASA Astrophysics Data System (ADS)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01