Sample records for electroluminescent devices based

  1. Polymer matrix electroluminescent materials and devices

    DOEpatents

    Marrocco, III, Matthew L.; Motamedi, Farshad J [Claremont, CA; Abdelrazzaq, Feras Bashir [Covina, CA; Abdelrazzaq, legal representative, Bashir Twfiq

    2012-06-26

    Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units covalently coordinated to a phosphorescent or luminescent metal ion or metal ion complexes. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are also disclosed.

  2. A New Kind of Blue Hybrid Electroluminescent Device.

    PubMed

    Wang, Junling; Li, Zhuan; Liu, Chunmei

    2016-04-01

    Bright blue Electroluminescence come from a ITO/BBOT doped silica (6 x 10(-3) M) made by a sol-gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a single-layered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol-gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6 x 10(-3) M. Blue electroluminescent (EL) always occurred above a threshold field 8.57 x 10(5) V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule's photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.

  3. Hybrid electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  4. Polarized electroluminescence from edge-emission organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ran, G. Z.; Jiang, D. F.

    2011-01-01

    We report the experimental observation and measurement of the polarized electroluminescence from an edge-emission Si based- organic light emitting device (OLED) with a Sm/Au or Sm/Ag cathode. Light collected from the OLED edge comes from the scattering of the surface plasmon polaritons (SPPs) at the device boundary. This experiment shows that such Si-OLED can be an electrically excited SPP source on a silicon chip for optical interconnect based on SPPs.

  5. Charge transfer through amino groups-small molecules interface improving the performance of electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Kus, Mahmut; Okur, Salih; Demic, Şerafettin; Demirak, Kadir; Kurt, Mustafa; Icli, Sıddık

    2016-05-01

    A carboxylic group functioned charge transporting was synthesized and self-assembled on an indium tin oxide (ITO) anode. A typical electroluminescent device [modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (2 nm)/(120 nm)] was fabricated to investigate the effect of the amino groups-small molecules interface on the characteristics of the device. The increase in the surface work function of ITO is expected to facilitate the hole injection from the ITO anode to the Hole Transport Layer (HTL) in electroluminescence. The modified electroluminescent device could endure a higher current and showed a much higher luminance than the nonmodified one. For the produced electroluminescent devices, the I-V characteristics, optical characterization and quantum yields were performed. The external quantum efficiency of the modified electroluminescent device is improved as the result of the presence of the amino groups-small molecules interface.

  6. Method for producing high energy electroluminescent devices

    DOEpatents

    Meyerson, Bernard S.; Scott, Bruce A.; Wolford, Jr., Donald J.

    1992-09-29

    A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.

  7. Green-light-emitting electroluminescent device based on a new cadmium complex

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Srivastava, Ritu; Kumar, Akshay; Kamalasanan, M. N.; Singh, K.

    2010-06-01

    A new cadmium complex is synthesized to investigate its stability and applicability for a luminescent device. The as-prepared Cd(Bpy)q sample is characterized by Fourier-transformed infra-red spectroscopy (FTIR), thermal gravimetric analyzer (TGA) and photoluminescence (PL). The prepared sample shows excellent thermal stability up to 380 °C. A maximum is observed at 240 nm in absorption spectra which is attributed to the π-π* transition. An organic-light-emitting diode (OLED) has been fabricated using this material. The fundamental structures of the device exhibit ITO/α-NPD/Cd(Bpy)q/BCP/Alq3/LiF/Al. The electroluminescence (EL) device emits bright green light with maximum luminescence 1683 cd/m2 at 20 V.

  8. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    NASA Astrophysics Data System (ADS)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  9. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ethiraj, Anita Sagadevan, E-mail: anita.ethiraj@vit.ac.in; Center for Nanotechnology Research, VIT University, Vellore, TamilNadu-632014; Rhen, Dani

    2016-05-06

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-phenyl)-4,4′-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibitedmore » bright electroluminescence emission of 24 cd/m{sup 2} at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m{sup 2} at ∼22 Volts.« less

  10. Organic electroluminescent devices having improved light extraction

    DOEpatents

    Shiang, Joseph John [Niskayuna, NY

    2007-07-17

    Organic electroluminescent devices having improved light extraction include a light-scattering medium disposed adjacent thereto. The light-scattering medium has a light scattering anisotropy parameter g in the range from greater than zero to about 0.99, and a scatterance parameter S less than about 0.22 or greater than about 3.

  11. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

  12. Flexible, polymer gated, AC-driven organic electroluminescence devices

    NASA Astrophysics Data System (ADS)

    Xu, Junwei; Carroll, David L.

    2017-08-01

    Comparing rigid inorganic layer, polymeric semiconducting gate layer exhibits superior flexibility as well as efficient carrier manipulation in high frequency AC cycles. Mechanism of the carrier manipulation at the gate in forward and reversed bias of AC cycle is studied. The flexible PET-based AC-OEL device with poly[(9,9-bis(3'-((N,N-dimethyl)-Nethylammonium)- propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN-Br) gate shows a stable electroluminescent performance in frequency sweep with a color rendering index (CRI) over 81 at 2800K color temperature.

  13. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  14. Solid state carbon nanotube device for controllable trion electroluminescence emission

    NASA Astrophysics Data System (ADS)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  15. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

    PubMed

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-02

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

  16. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOEpatents

    Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

    2001-12-18

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  17. Progress and Prospects in Stretchable Electroluminescent Devices

    NASA Astrophysics Data System (ADS)

    Wang, Jiangxin; Lee, Pooi See

    2017-03-01

    Stretchable electroluminescent (EL) devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are reviewed. Finally, we

  18. Guest concentration, bias current, and temperature-dependent sign inversion of magneto-electroluminescence in thermally activated delayed fluorescence devices

    NASA Astrophysics Data System (ADS)

    Deng, Junquan; Jia, Weiyao; Chen, Yingbing; Liu, Dongyu; Hu, Yeqian; Xiong, Zuhong

    2017-03-01

    Non-emissive triplet excited states in devices that undergo thermally activated delayed fluorescence (TADF) can be up-converted to singlet excited states via reverse intersystem crossing (RISC), which leads to an enhanced electroluminescence efficiency. Exciton-based fluorescence devices always exhibit a positive magneto-electroluminescence (MEL) because intersystem crossing (ISC) can be suppressed effectively by an external magnetic field. Conversely, TADF devices should exhibit a negative MEL because RISC is suppressed by the external magnetic field. Intriguingly, we observed a positive MEL in TADF devices. Moreover, the sign of the MEL was either positive or negative, and depended on experimental conditions, including doping concentration, current density and temperature. The MEL observed from our TADF devices demonstrated that ISC in the host material and RISC in the guest material coexisted. These competing processes were affected by the experimental conditions, which led to the sign change of the MEL. This work gives important insight into the energy transfer processes and the evolution of excited states in TADF devices.

  19. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  20. Mechanically flexible organic electroluminescent device with directional light emission

    DOEpatents

    Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

    2005-05-10

    A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

  1. All-solution-processed, multilayered CuInS₂/ZnS colloidal quantum-dot-based electroluminescent device.

    PubMed

    Kim, Jong-Hoon; Yang, Heesun

    2014-09-01

    While significant progress of electroluminescent (EL) quantum dot light-emitting diodes (QD-LEDs) that rely exclusively on Cd-containing II-VI quantum dots (QDs) has been reported over the past two decades with respect to device processing and performance, devices based on non-Cd QDs as an active emissive layer (EML) remain at the early stage of development. In this work, utilizing highly luminescent colloidal CuInS2 (CIS)/ZnS QDs, all-solution-processed multilayered QD-LEDs are fabricated by sequentially spin depositing a hole transport layer of poly(9-vinlycarbazole), an EML of CIS/ZnS QDs, and an electron transport layer of ZnO nanoparticles. Our focus in device fabrication is to vary the thickness of the QD EML, which is one of the primary determinants in EL performance but has not been addressed in earlier reports. The device with an optimal EML thickness exhibits a peak luminance of 1564  cd/m2 and current efficiency of 2.52  cd/A. This record value in efficiency is higher by 3-4 times that of CIS QD-LEDs reported previously.

  2. White light-emitting organic electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

    2006-06-20

    A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

  3. Theoretical and material studies of thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.

    1989-01-01

    Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

  4. Unusual near-white electroluminescence of light emitting diodes based on saddle-shaped porphyrins.

    PubMed

    Shahroosvand, Hashem; Zakavi, Saeed; Sousaraei, Ahmad; Mohajerani, Ezeddin; Mahmoudi, Malek

    2015-05-14

    In contrast to the red electroluminescence emission frequently observed in porphyrins based OLED devices, the present devices exhibit a nearly white emission with greenish yellow, yellowish green and blue green hues in the case of Fe(II)(TCPPBr6) (TCPPBr6 = β-hexabromo-meso-tetrakis-(4-phenyl carboxyl) porphyrinato), Zn(II)(TPPBr6) and Co(II)(TPPBr6), respectively.

  5. Efficient red organic electroluminescent devices by doping platinum(II) Schiff base emitter into two host materials with stepwise energy levels.

    PubMed

    Zhou, Liang; Kwok, Chi-Chung; Cheng, Gang; Zhang, Hongjie; Che, Chi-Ming

    2013-07-15

    In this work, organic electroluminescent (EL) devices with double light-emitting layers (EMLs) having stepwise energy levels were designed to improve the EL performance of a red-light-emitting platinum(II) Schiff base complex. A series of devices with single or double EML(s) were fabricated and characterized. Compared with single-EML devices, double-EML devices showed improved EL efficiency and brightness, attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. The highest EL current efficiency and power efficiency of 17.36 cd/A and 14.73 lm/W, respectively, were achieved with the optimized double-EML devices. At high brightness of 1000 cd/m², EL efficiency as high as 8.89 cd/A was retained.

  6. Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers.

    PubMed

    Wen, Li; Liu, Nishuang; Wang, Siliang; Zhang, Hui; Zhao, Wanqiu; Yang, Zhichun; Wang, Yumei; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

    2016-10-03

    Flexible alternating current electroluminescent devices (ACEL) are more and more popular and widely used in liquid-crystal display back-lighting, large-scale architectural and decorative lighting due to their uniform light emission, low power consumption and high resolution. However, presently how to acquire high brightness under a certain voltage are confronted with challenges. Here, we demonstrate an electroluminescence (EL) enhancing strategy that tetrapod-like ZnO whiskers (T-ZnOw) are added into the bottom electrode of carbon nanotubes (CNTs) instead of phosphor layer in flexible ACEL devices emitting blue, green and orange lights, and the brightness is greatly enhanced due to the coupling between the T-ZnOw and ZnS phosphor dispersed in the flexible polydimethylsiloxane (PDMS) layer. This strategy provides a new routine for the development of high performance, flexible and large-area ACEL devices.

  7. Dielectric relaxation in AC powder electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Zhang, Shuai; Su, Haibin; Tan, Chuan Seng; Wong, Terence Kin Shun; Teo, Ronnie Jin Wah

    2017-01-01

    The dielectric properties of AC powder electroluminescent devices were measured and analyzed using complex impedance spectroscopy to determine the relaxation processes occurring within the devices. The relaxation processes identified were ascribed to the electrode polarization caused by ion accumulation at the electrode/resin interfaces, the Maxwell-Wagner-Sillars effects at the (ZnS or BaTiO3) particle/resin interfaces, and the dipolar reorientation of polymer chains in the resin matrix. Each relaxation process was represented by its corresponding equivalent circuit component. Space charge polarization at the electrodes were represented by a Warburg element, a resistor, and a constant phase element. The resin matrix, ZnS/resin and BaTiO3/resin interfaces could each be modeled by a resistor and a capacitor in parallel. The simulated equivalent circuits for three different printed structures showed good fitting with their experimental impedance results.

  8. Planar electroluminescent panel techniques

    NASA Technical Reports Server (NTRS)

    Kerr, C.; Kell, R. E.

    1973-01-01

    Investigations of planar electroluminescent multipurpose displays with latch-in memory are described. An 18 x 24 in. flat, thin address panel with elements spacing of 0.100 in. was constructed which demonstrated essentially uniform luminosity of 3-5 foot lamberts for each of its 43200 EL cells. A working model of a 4-bit EL-PC (electroluminescent photoconductive) electrooptical decoder was made which demonstrated the feasibility of this concept. A single-diagram electroluminescent display device with photoconductive-electroluminescent latch-in memory was constructed which demonstrated the conceptual soundness of this principle. Attempts to combine these principles in a single PEL multipurpose display with latch-in memory were unsuccessful and were judged to exceed the state-of-the-art for close-packed (0.10 in. centers) photoconductor-electroluminescent cell assembly.

  9. Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots.

    PubMed

    Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

    2015-03-12

    Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.

  10. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    PubMed Central

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  11. Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

    2015-03-01

    Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu

  12. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3

    NASA Astrophysics Data System (ADS)

    Yuan, Chao; Guan, Min; Zhang, Yang; Li, Yiyang; Liu, Shuangjie; Zeng, Yiping

    2017-08-01

    In this work, the organic light-emitting diodes (OLEDs) based on Alq3 are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage-luminescence (I-V-L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq3). The MoO3 injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO3 injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The Vf is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between Vf caused by the MoO3 injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy)3 is 0.73 us/K.

  13. Electroluminescence Properties of IrQ(ppy)2 Dual-Emitter Organometallic Compound in Organic Light-Emitting Devices

    NASA Astrophysics Data System (ADS)

    Ciobotaru, Constantin Claudiu; Polosan, Silviu; Ciobotaru, Iulia Corina

    2018-02-01

    This paper reports the influence of the charge carrier mobility on the electroluminescent properties of a dual-emitter organometallic compound dispersed in two conjugated organic small-molecule host materials and embedded in organic light-emitting devices (OLEDs). The electroluminescent processes in OLEDs are strongly influenced by the host-guest interaction. The charge carrier mobility in the host material plays an important role in the electroluminescent processes but also depends on the triplet-triplet interaction with the organometallic compound. The low charge carrier mobility in 4,4'-bis( N-carbazolyl)-1,1'-biphenyl (CBP) host material reduces the electroluminescent processes, but they are slightly enhanced by the triplet-triplet exothermic charge transfer. The higher charge carrier mobility in the case of N, N'-bis(3-methylphenyl)- N, N'-diphenylbenzidine (TPD) host material influences the electroluminescent processes by the endothermic energy transfer at room temperature, which facilitates the triplet-triplet harvesting in the host-guest system. The excitation is transferred to the guest molecules by triplet-triplet interaction as a Dexter transfer, which occurs by endothermic transfer from the triplet exciton in the host to the triplet exciton in the guest.

  14. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOEpatents

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  15. TOPICAL REVIEW: Electrical transport modelling in organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Walker, A. B.; Kambili, A.; Martin, S. J.

    2002-10-01

    Organic electroluminescent devices (OEDs) emit light when an electric current is applied to a thin film section. They arise from two main technology branches - small molecules and light emitting polymers. Apart from the insight offered into the fundamentals of their physics, which is relevant to topics such as electrical transport in biological systems and molecular computers, understanding how the mobilities in these systems vary with morphology and composition enables the design of improved materials for technological requirements, e.g. fast switching speeds for active matrix displays and polymer field effect transistors. In this review, we have focussed on the models of transport in OEDs that address the unusual nature of this transport and underpin device design. The review concludes with the following point: as new materials for use in OEDs continue to appear, modelling is essential for the prediction of their transport properties, which in turn leads to the establishment of fundamental trends in the behaviour of devices employing them.

  16. [The role of BCP in electroluminescence of multilayer organic light-emitting devices].

    PubMed

    Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

    2009-03-01

    As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

  17. Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands.

    PubMed

    Kaplunov, Mikhail G; Krasnikova, Svetlana S; Nikitenko, Sergey L; Sermakasheva, Natalia L; Yakushchenko, Igor K

    2012-04-03

    We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material.

  18. Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands

    PubMed Central

    2012-01-01

    We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material. PMID:22471942

  19. Organic electroluminescent devices and method for improving energy efficiency and optical stability thereof

    DOEpatents

    Heller, Christian Maria

    2004-04-27

    An organic electroluminescent device ("OELD") has a controllable brightness, an improved energy efficiency, and stable optical output at low brightness. The OELD is activated with a series of voltage pulses, each of which has a maximum voltage value that corresponds to the maximum power efficiency when the OELD is activated. The frequency of the pulses, or the duty cycle, or both are chosen to provide the desired average brightness.

  20. Effects of electrode modification using calcium on the performance of alternating current field-induced polymer electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Xia, Yingdong; Chen, Yonghua; Smith, Gregory M.; Li, Yuan; Huang, Wenxiao; Carroll, David L.

    2013-06-01

    In this work, the effects of electrode modification by calcium (Ca) on the performance of AC field induced polymer electroluminescence (FIPEL) devices are studied. The FIPEL device with Ca/Al electrode exhibits 550 cd m-2, which is 27.5 times higher than that of the device with only an Al electrode (20 cd m-2). Both holes and electrons are injected from one electrode in our FIPEL device. We found that the electron injection can be significantly enhanced by a Ca modification on the Al electrode without greatly affecting the hole injection. Therefore, the electrons and holes can be effectively recombined in the emissive layer to form more excitons under the AC voltage, leading to effective light emission. The device emitted much brighter light than other AC-based organic EL devices. This result provides an easy and effective way to improve FIPEL performance.

  1. Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

    NASA Astrophysics Data System (ADS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2016-11-01

    Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions.

  2. Electroluminescence dependence on the organic thickness in ZnO nano rods/Alq3 heterostructure devices.

    PubMed

    Kan, Pengzhi; Wang, Yongsheng; Zhao, Suling; Xu, Zheng; Wang, Dawei

    2011-04-01

    ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Their crystallization and morphology are detected by XRD and SEM, respectively. The results show that the ZnO nanorod array has grown primarily along a direction aligned perpendicular to the ITO substrate. The average height and diameter of the nanorods is about 130 nm and 30 nm, respectively. Then ZnO nano rods/Alq3 heterostructure LEDs are prepared by thermal evaporation of Alq3 molecules. The thicknesses of the Alq3 layers are 130 nm, 150 nm, 170 nm and 190 nm, respectively. The electroluminescence of the devices is detected under different DC bias voltages. The exciton emission of Alq3 is detected in all devices. When the thickness of Alq3 is 130 nm, the UV electroluminescence of ZnO is around 382 nm, and defect emissions around 670 nm and 740 nm are detected. Defect emissions of ZnO nanorods are prominent. When the thickness of Alq3 increases to over 170 nm, it is difficult to observe defect emissions from the ZnO nano rods. In such devices, the exciton emission of Alq3 is more prominent than other emissions under different bias voltage.

  3. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    NASA Astrophysics Data System (ADS)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  4. Microstructure and electroluminescent performance of chemical vapor deposited zinc sulfide doped with manganese films for integration in thin film electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Topol, Anna Wanda

    Zinc sulfide (ZnS) doped with manganese (Mn), ZnS:Mn, is widely recognized as the brightest and most effective electroluminescent (EL) phosphor used in current thin film electroluminescent (TFEL) devices. ZnS acts as a host lattice for the luminescent activator, Mn, leading to a highly efficient yellow-orange EL emission, and resulting in a wide array of applications in monochrome, multi-color and full color displays. Although this wide band dap (3.7 eV) material can be prepared by several deposition techniques, the chemical vapor deposition (CVD) is the most promising for TFEL applications in terms of viable deposition rates, high thickness and composition uniformity, and excellent yield over large area panels. This study describes the development and optimization of a CVD ZnS:Mn process using diethylzinc [(C2H5)2Zn, DEZ], di-pi-cyclopentadienylmanganese [(C5H5)2Mn, CPMn], and hydrogen sulfide [H2S] as the chemical sources for, respectively, Zn, Mn, and S. The effects of key deposition parameters on resulting Film microstructure and performance are discussed, primarily in the context of identifying an optimized process window for best electroluminescence behavior. In particular, substrate temperature was observed to play a key role in the formation of high quality crystalline ZnS:Mn films leading to improved brightness and EL efficiency. Further investigations of the influence of temperature treatment on the structural characteristics and EL performance of the CVD ZnS:Mn film were carried out. In this study, the influence of post-deposition annealing both in-situ and ex-situ annealing processes, on chemical, structural, and electroluminescent characteristics of the phosphor layer are described. The material properties of the employed dielectric are among the key factors determining the performance, stability and reliability of the TFEL display and therefore, the choice of dielectric material for use in ACTFEL displays is crucial. In addition, the luminous

  5. Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

    NASA Astrophysics Data System (ADS)

    Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

    2018-01-01

    A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

  6. Analysis of power supply circuits for electroluminescent panels

    NASA Astrophysics Data System (ADS)

    Drumea, Andrei; Dobre, Robert Alexandru

    2016-12-01

    The electroluminescent panel is a light emitting device that requires for normal operations alternative voltages with peak to peak amplitudes in 100V… 300V range and frequencies in 100Hz … 2 kHz range. Its advantages, when compared with standard light sources like incandescent lamps, gas-discharge lamps or light emitting diodes (LEDs), are lower power consumption, flexible substrate and uniform light without observable luminous points. One disadvantage of electroluminescent panels is the complex power supply required to drive them, but the continuous improvement in passive and active integrated devices for switched mode power supplies will eventually solve this issue. The present paper studies different topologies for these power supplies and the effect of the electric parameters like the amplitude, frequency, waveform of the supplying voltage on the light emission and on power consumption for electroluminescent panels with different size and colors.

  7. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  8. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lv, Chunyan; Department of Chemistry, Huzhou University, Zhejiang, Huzhou 313000; Zhu, Chen

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host viamore » defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.« less

  9. Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices.

    PubMed

    Wang, Jiangxin; Yan, Chaoyi; Magdassi, Shlomo; Lee, Pooi See

    2013-08-14

    Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

  10. Electroluminescence of ZnO-based semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Novodvorskii, O. A.; Lotin, A. A.; Panchenko, Vladislav Ya; Parshina, L. S.; Khaidukov, E. V.; Zuev, D. A.; Khramova, O. D.

    2011-01-01

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm-2, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs.

  11. Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

    NASA Astrophysics Data System (ADS)

    Ishimura, Takuyoshi; Matsumoto, Hironaga

    2014-04-01

    Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

  12. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    NASA Astrophysics Data System (ADS)

    Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

    2018-02-01

    Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  13. Electroluminescence of ZnO-based semiconductor heterostructures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  14. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  15. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang, E-mail: liuylxn@sohu.com

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGsmore » are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.« less

  16. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    NASA Astrophysics Data System (ADS)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  17. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

    2016-01-01

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  18. Exciton-Induced Degradation of Carbazole-Based Host Materials and Its Role in the Electroluminescence Spectral Changes in Phosphorescent Organic Light Emitting Devices with Electrical Aging.

    PubMed

    Yu, Hyeonghwa; Zhang, Yingjie; Cho, Yong Joo; Aziz, Hany

    2017-04-26

    We investigate the origins of the long-wavelength bands that appear in the emission spectra of carbazole-based host materials and play a role in the electroluminescence (EL) spectral changes of phosphorescent organic light emitting devices (PhOLEDs) with electrical aging. 4,4'-Bis(carbazol-9-yl)biphenyl (CBP) is used as a model carbazole host material and is studied using photoluminescence, EL, and atomic force microscopy measurements under various stress scenarios in both single and bilayer devices and in combination with various electron transport layer (ETL) materials. Results show that exciton-induced morphological aggregation of CBP is behind the appearance of those long-wavelength bands and that complexation between the aggregated CBP molecules and ETL molecules plays a role in this phenomenon. Comparisons between the effects of exciton and thermal stress suggest that exciton-induced aggregation may be limited to short-range molecular ordering or pairing (e.g., dimer or trimer species formation) versus longer-range ordering (crystallization) in the case of thermal stress. The findings provide new insights into exciton-induced degradation in wide band gap host materials and its role in limiting the stability of PhOLEDs.

  19. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    PubMed Central

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-01-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A−1 and 40.6 cd A−1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A−1 and 25.4 cd A−1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

  20. Plasmonic enhancement of electroluminescence

    NASA Astrophysics Data System (ADS)

    Guzatov, D. V.; Gaponenko, S. V.; Demir, H. V.

    2018-01-01

    Here plasmonic effect specifically on electroluminescence (EL) is studied in terms of radiative and nonradiative decay rates for a dipole near a metal spherical nanoparticle (NP). Contribution from scattering is taken into account and is shown to play a decisive role in EL enhancement owing to pronounced size-dependent radiative decay enhancement and weak size effect on non-radiative counterpart. Unlike photoluminescence where local incident field factor mainly determines the enhancement possibility and level, EL enhancement is only possible by means of quantum yield rise, EL enhancement being feasible only for an intrinsic quantum yield Q0 < 1. The resulting plasmonic effect is independent of intrinsic emitter lifetime but is exclusively defined by the value of Q0, emission spectrum, NP diameter and emitter-metal spacing. For 0.1< Q0 < 0.25, Ag nanoparticles are shown to enhance LED/OLED intensity by several times over the whole visible whereas Au particles feature lower effect within the red-orange range only. Independently of positive effect on quantum yield, metal nanoparticles embedded in an electroluminescent device will improve its efficiency at high currents owing to enhanced overall recombination rate which will diminish manifestation of Auger processes. The latter are believed to be responsible for the known undesirable efficiency droop in semiconductor commercial quantum well based LEDs at higher current. For the same reason plasmonics can diminish quantum dot photodegradation from Auger process induced non-radiative recombination and photoionization thus opening a way to avoid negative Auger effects in emerging colloidal semiconductor LEDs.

  1. Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs

    NASA Astrophysics Data System (ADS)

    Puchert, Robin P.; Steiner, Florian; Plechinger, Gerd; Hofmann, Felix J.; Caspers, Ines; Kirschner, Johanna; Nagler, Philipp; Chernikov, Alexey; Schüller, Christian; Korn, Tobias; Vogelsang, Jan; Bange, Sebastian; Lupton, John M.

    2017-07-01

    Few inventions have shaped the world like the incandescent bulb. Edison used thermal radiation from ohmically heated conductors, but some noble metals also exhibit 'cold' electroluminescence in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennas or scanning tunnelling microscopy. The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle electroluminescence is particularly intriguing because it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. Here, we demonstrate nanoscopic FRET-light-emitting diodes which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides. In diffraction-limited hotspots showing pronounced photon bunching, broadband silver electroluminescence is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-light-emitting diodes in on-chip optical interconnects.

  2. Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs.

    PubMed

    Puchert, Robin P; Steiner, Florian; Plechinger, Gerd; Hofmann, Felix J; Caspers, Ines; Kirschner, Johanna; Nagler, Philipp; Chernikov, Alexey; Schüller, Christian; Korn, Tobias; Vogelsang, Jan; Bange, Sebastian; Lupton, John M

    2017-07-01

    Few inventions have shaped the world like the incandescent bulb. Edison used thermal radiation from ohmically heated conductors, but some noble metals also exhibit 'cold' electroluminescence in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennas or scanning tunnelling microscopy. The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle electroluminescence is particularly intriguing because it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. Here, we demonstrate nanoscopic FRET-light-emitting diodes which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides. In diffraction-limited hotspots showing pronounced photon bunching, broadband silver electroluminescence is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-light-emitting diodes in on-chip optical interconnects.

  3. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    NASA Astrophysics Data System (ADS)

    Wang, Hanyu; Zhou, Jie; Wang, Xu; Lu, Zhiyun; Yu, Junsheng

    2014-08-01

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-{3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy}-2-(4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 1011 Jones at -3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm2, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m2. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  4. Multifunctional Device based on phosphor-piezoelectric PZT: lighting, speaking, and mechanical energy harvesting.

    PubMed

    Lee, Sunghoon; Kang, Taewook; Lee, Wunho; Afandi, Mohammad M; Ryu, Jongho; Kim, Jongsu

    2018-01-10

    We demonstrated the tri-functional device based on all powder-processing methods by using ZnS powder as phosphor layer and piezoelectric material as dielectric layer. The fabricated device generated the electroluminescent (EL) light from phosphor and the sound from piezoelectric sheet under a supply of external electric power, and additionally harvested the reverse-piezoelectric energy to be converted into EL light. Under sinusoidal applied voltage, EL luminances were exponentially increased with a maximum luminous efficiency of 1.3 lm/W at 40 V and 1,000 Hz, and sound pressure levels (SPLs) were linearly increased. The EL luminances were linearly dependent on applied frequency while the SPLs showed the parabolic increase behavior below 1,000 Hz and then the flat response. The temperature dependence on EL luminances and SPLs was demonstrated; the former was drastically increased and the latter was slightly decreased with the increase of temperature. Finally, as an energy harvesting application, the piezoelectric-induced electroluminescence effect was demonstrated by applying only mechanical pressure to the device without any external electric power.

  5. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  6. Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices

    NASA Astrophysics Data System (ADS)

    Zanoni, Enrico; Meneghesso, Gaudenzio; Menozzi, Roberto

    2000-03-01

    Hot electron in III-V FETs can be indirectly monitored by measuring the current coming out from the gate when the device is biased at high electric fields. This negative current is due to the collection of holes generated by impact ionization in the gate-to drain region. Electroluminescence represents a powerful tool in order to characterize not only hot electrons but also material properties. By using spatially resolved emission microscopy it is possible to show that the light due to cold electron/hole recombination is emitted between the gate and the source (low electric field region), while the contribution due to hot electrons is emitted between the gate and the drain (high electric field region). Deep-traps created in the device by hot carriers can be analysed by means of drain current deep level transient spectroscopy and by transconductance frequency dispersion. Cathodoluminescence, optical beam induced current, X-ray spectroscopy, electron energy loss spectroscopy in combination with a transmission electron microscopy are powerful tools in order to identify and localize surface modification following hot-electron stress tests.

  7. Electroluminescence Efficiency Enhancement using Metal Nanoparticles

    DTIC Science & Technology

    2008-06-22

    ABSTRACT We apply the “effective mode volume” theory to evaluate enhancement of the electroluminescence efficiency of semiconductor emitters placed in... Electroluminescence efficiency enhancement using metal nanoparticles J. B. Khurgin,1 G. Sun,2,a and R. A. Soref3 1Department of Electrical and Computer...published online 17 July 2008 We apply the “effective mode volume” theory to evaluate enhancement of the electroluminescence efficiency of semiconductor

  8. Power generation by thermally assisted electroluminescence: like optical cooling, but different

    NASA Astrophysics Data System (ADS)

    Buckner, Benjamin D.; Heeg, Bauke

    2008-02-01

    Thermally assisted electro-luminescence may provide a means to convert heat into electricity. In this process, radiation from a hot light-emitting diode (LED) is converted to electricity by a photovoltaic (PV) cell, which is termed thermophotonics. Novel analytical solutions to the equations governing such a system show that this system combines physical characteristics of thermophotovoltaics (TPV) and the inverse process of laser cooling. The flexibility of having both adjustable bias and load parameters may allow an optimized power generation system based on this concept to exceed the power throughput and efficiency of TPV systems. Such devices could function as efficient solar thermal, waste heat, and fuel-based generators.

  9. Efficient hybrid white polymer light-emitting devices with electroluminescence covered the entire visible range and reduced efficiency roll-off

    NASA Astrophysics Data System (ADS)

    Hu, Sujun; Zhu, Minrong; Zou, Qinghua; Wu, Hongbin; Yang, Chuluo; Wong, Wai-Yeung; Yang, Wei; Peng, Junbiao; Cao, Yong

    2012-02-01

    We report efficient hybrid white polymer light emitting devices (WPLEDs) fabricated via simple solution-proceeded process from a newly synthesized wide band-gap fluorene-co-dibenzothiophene-S,S-dioxide copolymer, which dually function as fluorescent blue emitter and host material for electrophosphorescent sky-blue, yellow, and saturated-red dyes. The Commission Internationale d'Énclairage coordinates of the best devices are (0.356, 0.334), with electroluminescence covered the entire visible light spectrum from 400 to 780 nm, resulting in a high color rendering index of 90. Incorporation of a bilayer electrode consisting of water/alcohol-soluble conjugated polymer and Al as electron-injection cathode boosts an enhancement of 50% in device efficiency, leading to external quantum efficiency of 12.6%, and peak power efficiency of 21.4 l m W-1 as measured in an integrating sphere. Both the efficiency and the color quality of the obtained device are ranking among one of the highest values for WPLEDs reported to date. Furthermore, as compared with those all-phosphorescent WPLEDs, the hybrid WPLEDs studied here exhibit a significantly reduced efficiency roll-off due to the very low doping concentration.

  10. Carbon-electroluminescence: An organic approach to lighting

    NASA Astrophysics Data System (ADS)

    Kumari, Sonali; Chaudhary, Tarun; Chandran, Vivek; Lokeshwari, M.; Shastry, K.

    2018-05-01

    Over the recent years, quantum dots have garnered massive following and peaked in interest among the scientific community due to their versatility, exotic properties, ease of preparation and low cost. As the demand for faster, reliable and energy efficient electronic devices intensifies, extra emphasis is laid on the development of smart materials capable of satiating this need. Electroluminescent organic quantum dots have emerged as one of the prime contenders in addressing the ecological, economic and technological constraints. Application of such luminescent nanoparticles as fluorescent light converters in LEDs is touted as one of the reliable and easiest avenues in realizing and developing newer energy efficient technologies for the next millennia. One promising candidate is zig-zag graphene quantum dots, which exhibits high electro-luminescence due to a phenomenon known as quantum confinement (where size of the nano-particle is of the same order or less than that of Bohr exciton radius). In this paper, we aim to provide a review of past and present research in the synthesis and development of luminescence using organic quantum dots.

  11. Enhancement of green electroluminescence from nanocrystalline silicon by wet and dry processes.

    PubMed

    Sato, Keisuke; Hirakuri, Kenji

    2006-01-01

    Correlation between defects and luminescence property from electroluminescent (EL) device composed of nanocrystalline silicon (nc-Si) prepared by wet and dry processes such as hydrofluoric (HF) acid solution treatment and annealing have investigated using electron spin resonance and EL measurements. The EL device using HF-treated nc-Si emitted strong red light, because of existence of only P'ce-centers (radiative recombination centers) on the surface vicinity. On the other hand, the EL device using annealed nc-Si above 400 degrees C exhibited green luminescence by the reduction of particle size due to surface oxidation. When the annealing temperature was risen from 400 degrees C up to 600 degrees C, the green luminescence strengthened with increasing the P'ce-centers. These results indicate that the formation of many radiative recombination centers onto the nc-Si surface vicinity lead to the enhancement of green luminescence from the nc-Si based EL device.

  12. Bright Electroluminescence from Single Graphene Nanoribbon Junctions

    NASA Astrophysics Data System (ADS)

    Chong, Michael C.; Afshar-Imani, Nasima; Scheurer, Fabrice; Cardoso, Claudia; Ferretti, Andrea; Prezzi, Deborah; Schull, Guillaume

    2018-01-01

    Thanks to their highly tunable band gaps, graphene nanoribbons (GNRs) with atomically precise edges are emerging as mechanically and chemically robust candidates for nanoscale light emitting devices of modulable emission color. While their optical properties have been addressed theoretically in depth, only few experimental studies exist, limited to ensemble measurements and without any attempt to integrate them in an electronic-like circuit. Here we report on the electroluminescence of individual GNRs suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate, constituting thus a realistic opto-electronic circuit. Emission spectra of such GNR junctions reveal a bright and narrow band emission of red light, whose energy can be tuned with the bias voltage applied to the junction, but always lying below the gap of infinite GNRs. Comparison with {\\it ab initio} calculations indicate that the emission involves electronic states localized at the GNR termini. Our results shed light on unpredicted optical transitions in GNRs and provide a promising route for the realization of bright, robust and controllable graphene-based light emitting devices.

  13. Development of electroluminescence based pressure-sensitive paint system.

    PubMed

    Iijima, Yoshimi; Sakaue, Hirotaka

    2011-01-01

    We introduce a pressure-sensitive paint (PSP) measurement system based on an electroluminescence (EL) as a surface illumination. This consists of an inorganic EL as the illumination, a short-pass filter, and a platinum-porphyrin based PSP. The short-pass filter, which passes below 500 nm, was used to separate an overlay of the EL illumination and the PSP emission. The EL shows an opposite temperature dependency to that of the PSP. It gives a uniform illumination compared to that of a point illumination source such as a xenon lamp. Under atmospheric conditions, the resultant EL-PSP system reduces the temperature dependency by 54% compared to that of a conventional PSP system. An application of the EL-PSP system to a sonic jet impingement shows that the system demonstrated its reduction of the temperature dependency by 75% in a pressure measurement and reduces an image misalignment error.

  14. Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

    PubMed

    Chen, Jiun-Ting; Lai, Wei-Chih; Chen, Chi-Heng; Yang, Ya-Yu; Sheu, Jinn-Kong; Lai, Li-Wen

    2011-06-06

    We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.

  15. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    NASA Astrophysics Data System (ADS)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  16. Simultaneous enhancement of photo- and electroluminescence in white organic light-emitting devices by localized surface plasmons of silver nanoclusters

    NASA Astrophysics Data System (ADS)

    Yu, Jingting; Zhu, Wenqing; Shi, Guanjie; Zhai, Guangsheng; Qian, Bingjie; Li, Jun

    2017-02-01

    White organic light-emitting devices (WOLEDs) with enhanced current efficiency and negligible color shifting equipped with an internal color conversion layer (CCL) were fabricated. They were attained by embedding a single layer of silver nanoclusters (SNCs) between the CCL and light-emitting layer (EML). The simultaneous enhancement of the photoluminescence (PL) of the CCL and electroluminescence (EL) of the EML were realized by controlling the thickness and size of the SNCs to match the localized surface plasmon resonance spectrum with the PL spectrum of the CCL and the EL spectrum of the EML. The WOLED with optimal SNCs demonstrated a 25.81% enhancement in current efficiency at 60 mA cm-2 and good color stability over the entire range of current density.

  17. High Performance Organic Materials and Devices

    DTIC Science & Technology

    2006-03-31

    on this material exhibited external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd/A. 15. SUBJECT TERMS 16...International de L’Eclairage coordinate at (0.164, 0.188). The external quantum efficiency of 2.48% and electroluminescence efficiency as high as 3.33 cd...more than 90% absorption in active layer, and highly balanced carrier transport. 4 5. High efficient blue- electroluminescence device shows maximum

  18. Electroluminescence and transport properties in amorphous silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Irrera, Alessia; Iacona, Fabio; Crupi, Isodiana; Presti, Calogero D.; Franzò, Giorgia; Bongiorno, Corrado; Sanfilippo, Delfo; Di Stefano, Gianfranco; Piana, Angelo; Fallica, Pier Giorgio; Canino, Andrea; Priolo, Francesco

    2006-03-01

    We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend as a function of temperature with a maximum at around 60 K. The efficiency of these devices is comparable to that found in devices based on Si nanocrystals, although amorphous nanostructures exhibit peculiar working conditions (very high current densities and low applied voltages). Time resolved EL measurements demonstrate the presence of a short lifetime, only partially due to the occurrence of non-radiative phenomena, since the very small amorphous clusters formed at 900 °C are characterized by a short radiative lifetime. By forcing a current through the device a phenomenon of charge trapping in the Si nanostructures has been observed. Trapped charges affect luminescence through an Auger-type non-radiative recombination of excitons. Indeed, it is shown that unbalanced injection of carriers (electrons versus holes) is one of the main processes limiting luminescence efficiency. These data will be reported and the advantages and limitations of this approach will be discussed.

  19. Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Singh, Anju, E-mail: singh-nk24@yahoo.com; Vishwakarma, H. L., E-mail: horilal5@yahoo.com

    2015-07-31

    In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the lengthmore » of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.« less

  20. Efficient electroluminescent cooling with a light-emitting diode coupled to a photovoltaic cell (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Xiao, Tianyao P.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

    2017-02-01

    The new breakthrough in photovoltaics, exemplified by the slogan "A great solar cell has to be a great light-emitting diode (LED)", has led to all the major new solar cell records, while also leading to extraordinary LED efficiency. As an LED becomes very efficient in converting its electrical input into light, the device cools as it operates because the photons carry away entropy as well as energy. If these photons are absorbed in a photovoltaic (PV) cell, the generated electricity can be used to provide part of the electrical input that drives the LED. Indeed, the LED/PV cell combination forms a new type of heat engine with light as the working fluid. The electroluminescent refrigerator requires only a small amount of external electricity to provide cooling, leading to a high coefficient of performance. We present the theoretical performance of such a refrigerator, in which the cool side (LED) is radiatively coupled to the hot side (PV) across a vacuum gap. The coefficient of performance is maximized by using a highly luminescent material, such as GaAs, together with device structures that optimize extraction of the luminescence. We consider both a macroscopic vacuum gap and a sub-wavelength gap; the latter allows for evanescent coupling of photons between the devices, potentially providing a further enhancement to the efficiency of light extraction. Using device assumptions based on the current record-efficiency solar cells, we show that electroluminescent cooling can, in certain regimes of cooling power, achieve a higher coefficient of performance than thermoelectric cooling.

  1. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

    PubMed

    Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

    2011-11-09

    Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission.

  2. Photo- and electroluminescence of new organic semiconductors

    NASA Astrophysics Data System (ADS)

    Samsonova, L. G.; Degtyarenko, K. M.; Gadirov, R. M.; Odod, A. V.; Kopylova, T. N.; Begimova, A.; Krasnikova, S. S.; Yakuschenko, I. K.; Gadomsky, S. Y.; Kaplunov, M. G.

    2018-04-01

    The results of investigation of the luminescence under photo- and electroexcitation for four new compounds are presented. The spectral properties and photoluminescence are studied in ethanol, chloroform solutions and in films formed by thermovacuum deposition (TVD). The phosphorescence of compounds is investigated in ethanol at 77K temperature. The phosphorescence times of molecules are given. The electroluminescence is obtained in multilayered structure ITO/PEDOT/NPD/L /Ca/Al. It is shown, that spectral region of the photoluminescence of TVD films and electroluminescence coincide. Relations of electroluminescence efficiency with molecule structure, photoluminescence quantum yield and possibility of thermally activated delayed fluorescence are discussed.

  3. Integrated fuses for OLED lighting device

    DOEpatents

    Pschenitzka, Florian [San Jose, CA

    2007-07-10

    An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

  4. Pyrimidine-based twisted donor-acceptor delayed fluorescence molecules: a new universal platform for highly efficient blue electroluminescence.

    PubMed

    Park, In Seob; Komiyama, Hideaki; Yasuda, Takuma

    2017-02-01

    Deep-blue emitters that can harvest both singlet and triplet excited states to give high electron-to-photon conversion efficiencies are highly desired for applications in full-color displays and white lighting devices based on organic light-emitting diodes (OLEDs). Thermally activated delayed fluorescence (TADF) molecules based on highly twisted donor-acceptor (D-A) configurations are promising emitting dopants for the construction of efficient deep-blue OLEDs. In this study, a simple and versatile D-A system combining acridan-based donors and pyrimidine-based acceptors has been developed as a new platform for high-efficiency deep-blue TADF emitters. The designed pre-twisted acridan-pyrimidine D-A molecules exhibit small singlet-triplet energy splitting and high photoluminescence quantum yields, functioning as efficient deep-blue TADF emitters. The OLEDs utilizing these TADF emitters display bright blue electroluminescence with external quantum efficiencies of up to 20.4%, maximum current efficiencies of 41.7 cd A -1 , maximum power efficiencies of 37.2 lm W -1 , and color coordinates of (0.16, 0.23). The design strategy featuring such acridan-pyrimidine D-A motifs can offer great prospects for further developing high-performance deep-blue TADF emitters and TADF-OLEDs.

  5. Tunnel based spin injection devices for semiconductor spintronics

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides

  6. Electroluminescence properties of LEDs based on electron-irradiated p-Si

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Shtel’makh, K. F.; Kalyadin, A. E.

    2016-02-15

    The electroluminescence (EL) in n{sup +}–p–p{sup +} light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current aremore » examined.« less

  7. Low-voltage polariton electroluminescence from an ultrastrongly coupled organic light-emitting diode

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gubbin, Christopher R.; Maier, Stefan A.; Kéna-Cohen, Stéphane, E-mail: s.kena-cohen@polymtl.ca

    2014-06-09

    We demonstrate electroluminescence from Frenkel molecular excitons ultrastrongly coupled to photons of a metal-clad microcavity containing a 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorene emissive layer. Thin layers of molybdenum oxide and 4,7-diphenyl-1,10-phenanthroline are used as hole and electron injection layers, respectively. The fabricated devices exhibit an electroluminescence threshold of 3.1 V, a value that is below the bare exciton energy. This result is found to be independent of detuning and consistent with a two-step process for polariton formation. Moreover, we investigate the quantum efficiency of carrier to polariton to photon conversion and obtain an external quantum efficiency of 0.1% for the fabricated structures, an improvement ofmore » 5 orders of magnitude over previous reports.« less

  8. Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

    PubMed

    Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

    2010-12-15

    Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

  9. Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, T.P.; Zhu, H.C.; Bian, J.M.

    2008-12-01

    The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of {approx}10{sup 17} cm{sup -3} and a unintentionally doped n-type ZnO layer with an electron concentration of {approx}10{sup 18} cm{sup -3}. A distinct blue-violet electroluminescence with a dominant emission peak centered at {approx}415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra,more » and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.« less

  10. Triphenylvinyl anthracene based emitter for non-doped blue light emitting devices with unusual emission behavior

    NASA Astrophysics Data System (ADS)

    Islam, Amjad; Zhang, Dongdong; Usman, Khurram; Siddique, Ahmad Hassan; Wattoo, Abdul Ghafar; Khalid, Hamad; Ouyang, Xinhua; Duan, Lian; Ge, Ziyi

    2018-05-01

    A novel blue luminogen based on triphenylvinyl anthracene was synthesized. The photophysical, thermal and aggregation induced emission as well as electroluminescent properties were investigated. The luminogen demonstrated typical aggregation caused quenching (ACQ) effect. A non-doped organic light emitting device was fabricated and realized a current efficiency of 3.25 cd/A, an external quantum efficiency of 1.41%, power efficiency of 2.11 m/W and a maximum luminance of 11761.8 cd/m2 were achieved.

  11. Magnetically modulated electroluminescence from hybrid organic/inorganic light-emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Pang, Zhiyong; Baniya, Sangita; Zhang, Chuang; Sun, Dali; Vardeny, Z. Valy

    2016-03-01

    We report room temperature magnetically modulated electroluminescence from a hybrid organic/inorganic light-emitting diode (h-OLED), in which an inorganic magnetic tunnel junction (MTJ) with large room temperature magnetoresistance is coupled to an N,N,N ',N '-Tetrakis(4-methoxyphenyl)benzidine (MeO-TPD): tris-[3-(3-pyridyl)mesityl]borane (3TPYMB) [D-A] based OLED that shows thermally activated delayed luminescence. The exciplex-based OLED provides two spin-mixing channels: upper energy channel of polaron pairs and lower energy channel of exciplexes. In operation, the large resistance mismatch between the MTJ and OLED components is suppressed due to the non-linear I-V characteristic of the OLED. This leads to enhanced giant magneto-electroluminescence (MEL) at room temperature. We measured MEL of ~ 75% at ambient conditions. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  12. Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhu, Chen; Gao, Zhifei; Wang, Canxing

    2015-09-28

    We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gainingmore » the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.« less

  13. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  14. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    PubMed

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third.

  15. Electroluminescence of fluorescent-phosphorescent organic light-emitting diodes with regular, inverted, and symmetrical structures

    NASA Astrophysics Data System (ADS)

    Yang, Su-Hua; Shih, Po-Jen; Wu, Wen-Jie

    2014-11-01

    The influence of the device structure on the electroluminescence (EL) properties of fluorescent-phosphorescent organic light emitting diodes (OLEDs) was demonstrated. Four devices with regular-, inverted-, compensated- and symmetrical-emission layers (EMLs) were prepared. In regular-EML device, DCJTB emission increased when the phosphorescent sensitized EML was thickened. In inverted-EML device, low electron energy barrier at the Bphen/BCzVB interface resulted in weakened blue emission. The compensated-EML device, prepared with a red color-compensated layer, showed a color-tunable broadband white emission. Conversely, device with a quantum-like symmetrical-EML showed a narrow color-temperature range. Stable EL efficiency was obtained from regular, compensated, and symmetrical-EML devices. In contrast, EL efficiency of inverted-EML device rolled off significantly, though it had the highest EL efficiency of 11.4 cd/A.

  16. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

    PubMed

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-07-03

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

  17. Density-matrix approach for the electroluminescence of molecules in a scanning tunneling microscope.

    PubMed

    Tian, Guangjun; Liu, Ji-Cai; Luo, Yi

    2011-04-29

    The electroluminescence (EL) of molecules confined inside a nanocavity in the scanning tunneling microscope possesses many intriguing but unexplained features. We present here a general theoretical approach based on the density-matrix formalism to describe the EL from molecules near a metal surface induced by both electron tunneling and localized surface plasmon excitations simultaneously. It reveals the underlying physical mechanism for the external bias dependent EL. The important role played by the localized surface plasmon on the EL is highlighted. Calculations for porphyrin derivatives have reproduced corresponding experimental spectra and nicely explained the observed unusual large variation of emission spectral profiles. This general theoretical approach can find many applications in the design of molecular electronic and photonic devices.

  18. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    NASA Astrophysics Data System (ADS)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  19. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

    PubMed Central

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-01-01

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications. PMID:26138830

  20. 2-(2-Hydroxyphenyl)imidazole-based four-coordinate organoboron compounds with efficient deep blue photoluminescence and electroluminescence.

    PubMed

    Zhang, Zhenyu; Zhang, Zuolun; Zhang, Hongyu; Wang, Yue

    2017-12-19

    Two new four-coordinate organoboron compounds with 2-(2-hydroxyphenyl)imidazole derivatives as the chelating ligands have been synthesized. They possess high thermal stability and are able to form an amorphous glass state. Crystallographic analyses indicate that the differences in ligand structure cause the change of ππ stacking character. The CH 2 Cl 2 solutions and thin films of these compounds display bright blue emission, and these compounds have appropriate HOMO and LUMO energy levels for carrier injection in OLEDs. By utilizing the good thermal and luminescent properties, as well as the proper frontier orbital energy levels, bright non-doped OLEDs with a simple structure have been realized. Notably, these simple devices show deep blue electroluminescence with the Commission Internationale de l'Éclairage (CIE) coordinate of ca. (0.16, 0.08), which is close to the CIE coordinate of (0.14, 0.08) for standard blue defined by the National Television System Committee. In addition, one of the devices exhibits good performance, showing brightness, current efficiency, power efficiency and external quantum efficiency up to 2692 cd m -2 , 2.50 cd A -1 , 1.81 lm W -1 and 3.63%, respectively. This study not only provides good deep-blue emitting OLED materials that are rarely achieved by using four-coordinate organoboron compounds, but also allows a deeper understanding of the structure-property relationship of 2-(2-hydroxyphenyl)imidazole-based boron complexes, which benefits the further structural design of this type of material.

  1. Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes.

    PubMed

    Nishizawa, Nozomi; Nishibayashi, Kazuhiro; Munekata, Hiro

    2017-02-21

    We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density ( J ) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm 2 There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

  2. Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

    PubMed Central

    Nishibayashi, Kazuhiro

    2017-01-01

    We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOx spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results. PMID:28174272

  3. ZnO nanorods for electronic and photonic device applications

    NASA Astrophysics Data System (ADS)

    Yi, Gyu-Chul; Yoo, Jinkyoung; Park, Won Il; Jung, Sug Woo; An, Sung Jin; Kim, H. J.; Kim, D. W.

    2005-11-01

    We report on catalyst-free growth of ZnO nanorods and their nano-scale electrical and optical device applications. Catalyst-free metalorganic vapor-phase epitaxy (MOVPE) enables fabrication of size-controlled high purity ZnO single crystal nanorods. Various high quality nanorod heterostructures and quantum structures based on ZnO nanorods were also prepared using the MOVPE method and characterized using scanning electron microscopy, transmission electron microscopy, and optical spectroscopy. From the photoluminescence spectra of ZnO/Zn 0.8Mg 0.2O nanorod multi-quantum-well structures, in particular, we observed a systematic blue-shift in their PL peak position due to quantum confinement effect of carriers in nanorod quantum structures. For ZnO/ZnMgO coaxial nanorod heterostructures, photoluminescence intensity was significantly increased presumably due to surface passivation and carrier confinement. In addition to the growth and characterizations of ZnO nanorods and their quantum structures, we fabricated nanoscale electronic devices based on ZnO nanorods. We report on fabrication and device characteristics of metal-oxidesemiconductor field effect transistors (MOSFETs), Schottky diodes, and metal-semiconductor field effect transistors (MESFETs) as examples of the nanodevices. In addition, electroluminescent devices were fabricated using vertically aligned ZnO nanorods grown p-type GaN substrates, exhibiting strong visible electroluminescence.

  4. Polymer and small molecule based hybrid light source

    DOEpatents

    Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

    2010-03-16

    An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

  5. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

    2018-05-01

    Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

  6. Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs

    NASA Astrophysics Data System (ADS)

    Niu, Quan; Blom, Paul W. M.; May, Falk; Heimel, Paul; Zhang, Minlu; Eickhoff, Christian; Heinemeyer, Ute; Lennartz, Christian; Crǎciun, N. Irina

    2017-11-01

    In state-of-the-art blue phosphorescent organic light-emitting diode (PHOLED) device architectures, electrons and holes are injected into the emissive layer, where they are carried by the emitting and hole transporting units, respectively. Using transient electroluminescence measurements, we disentangle the contribution of the electrons and holes on the transport and efficiency of both pristine and degraded PHOLEDs. By varying the concentration of hole transporting units, we show that for pristine PHOLEDs, the transport is electron dominated. Furthermore, degradation of the PHOLEDs upon electrical aging is not related to the hole transport but is governed by a decrease in the electron transport due to the formation of electron traps.

  7. Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

    PubMed

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-03-18

    Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

  8. Estimation of exciton reverse transfer for variable spectra and high efficiency in interlayer-based organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Liu, Shengqiang; Zhao, Juan; Huang, Jiang; Yu, Junsheng

    2016-12-01

    Organic light-emitting devices (OLEDs) with three different exciton adjusting interlayers (EALs), which are inserted between two complementary blue and yellow emitting layers, are fabricated to demonstrate the relationship between the EAL and device performance. The results show that the variations of type and thickness of EAL have different adjusting capability and distribution control on excitons. However, we also find that the reverse Dexter transfer of triplet exciton from the light-emitting layer to the EAL is an energy loss path, which detrimentally affects electroluminescent (EL) spectral performance and device efficiency in different EAL-based devices. Based on exciton distribution and integration, an estimation of exciton reverse transfer is developed through a triplet energy level barrier to simulate the exciton behavior. Meanwhile, the estimation results also demonstrate the relationship between the EAL and device efficiency by a parameter of exciton reverse transfer probability. The estimation of exciton reverse transfer discloses a crucial role of the EALs in the interlayer-based OLEDs to achieve variable EL spectra and high efficiency.

  9. A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Evtukh, A. A., E-mail: dept_5@isp.kiev.ua; Kaganovich, E. B.; Manoilov, E. G.

    2006-02-15

    Electroluminescent structures that emit in the visible region of the spectrum and are based on porous silicon (por-Si) formed on the p-Si substrate electrolytically using an internal current source are fabricated. The photoluminescent and electroluminescent properties, as well as the current-and capacitance-voltage characteristics of the structures are studied. Electroluminescence is observed only if the forward bias voltage is applied to the structure; the electroluminescence mechanism is based on the injection and is related to the radiative recombination of electrons and holes in quantum-dimensional Si nanocrystals. The injection of holes is controlled by the condition of their accumulation in the space-chargemore » region of p-Si and by a comparatively low concentration of electronic states at the por-Si/p-Si interface. The charge transport in por-Si is caused by the direct tunneling of charge carriers between the quantum-mechanical levels, which is ensured by an appreciable number of quantum-dimensional Si nanocrystals. The leakage currents are low as a result of a small variance in the sizes of Si nanocrystals and the absence of comparatively large nanocrystals.« less

  10. White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

    PubMed

    Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

    2016-03-09

    In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

  11. Highly efficient organic electroluminescent diodes realized by efficient charge balance with optimized electron and hole transport layers

    NASA Astrophysics Data System (ADS)

    Khan, M. A.; Xu, Wei; Wei, Fuxiang; Bai, Yu; Jiang, X. Y.; Zhang, Z. L.; Zhu, W. Q.

    2007-11-01

    Highly efficient organic electroluminescent devices (OLEDs) were developed based on 4,7-diphenyl-1, 10-phenanthroline (BPhen) as the electron transport layer (ETL), tris-(8-hydroxyquinoline) aluminum (Alq 3) as the emission layer (EML) and N,Ń-bis-[1-naphthy(-N,Ńdiphenyl-1,1'-biphenyl-4,4'-diamine)] (NPB) as the hole transport layer (HTL). The typical device structure was glass substrate/ ITO/ NPB/ Alq 3/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of 5×10 -4 cm 2 V -1 s -1, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of 1361 cd/m 2 at a current density of 20 mA/cm 2. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

  12. Encapsulation methods for organic electrical devices

    DOEpatents

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  13. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed,more » like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This

  14. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    NASA Astrophysics Data System (ADS)

    Calciati, Marco; Goano, Michele; Bertazzi, Francesco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Bellotti, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-01

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10-30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at

  15. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2015-06-14

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module's electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation.more » Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.« less

  16. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    NASA Astrophysics Data System (ADS)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  17. Electro Optical Properties of Copolymer Blends: Lasing, Electroluminescence and Photophysics

    DTIC Science & Technology

    2006-04-15

    conjugated main chain structures with high photoluminescent and electroluminescent quantum yields. The structures incorporated fluorene containing moieties...The systems studied focused on novel conjugated main chain structures with high photoluminescent and electroluminescent quantum yields. The structures...the quantum efficient fluorine group. The properties of segmented copolymers that incorporate fluorenes were compared to the homo-PPV type systems

  18. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    PubMed

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  19. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Chung-Yi; Chang, Chih-Chiang; Huang, Chih-Hsiung

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layermore » through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.« less

  20. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    PubMed Central

    Muñoz-Rosas, Ana Luz; Alonso-Huitrón, Juan Carlos

    2018-01-01

    Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs) embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs) to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD) in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC)-sputtering technique, and an aluminum doped zinc oxide thin film (AZO) which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL) enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL) enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer. PMID:29565267

  1. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

  2. Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ye, Yu; Ye, Ziliang; Gharghi, Majid

    2014-05-12

    In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of amore » higher energy exciton peak of 2.255 eV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.« less

  3. White-light-emitting organic electroluminescent devices based on interlayer sequential energy transfer

    NASA Astrophysics Data System (ADS)

    Deshpande, R. S.; Bulović, V.; Forrest, S. R.

    1999-08-01

    We demonstrate efficient, molecular organic white-light-emitting devices using vacuum-deposited thin films of red luminescent [2-methyl-6-[2-(2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2), doped into blue-emitting 4, 4' bis [N-1-napthyl-N-phenyl-amino]biphenyl (α-NPD), and green-emitting tris-(8-hydroxyquinolinato) aluminum(III) (AlQ3). The luminescent layers are separated by a hole-blocking layer of 2,9-dimethyl, 4,7-diphenyl, 1,10-phenanthroline (BCP), whose thickness is on the order of a typical Förster transfer radius of 30-40 Å. Excitons formed on α-NPD sequentially transfer their energy via a Förster mechanism to AlQ3 across the BCP layer, and from AlQ3 to DCM2. This interlayer sequential energy transfer results in partial excitation of all three molecular species, thereby producing white light emission. The thickness of the blocking layer and the concentration of DCM2 in α-NPD permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.33). The spectrum is largely insensitive to the drive current, and the devices have a maximum luminance of 13 500 cd/m2. At a luminance of 100 cd/m2, the quantum and power efficiencies are 0.5% and 0.35 lm/W, respectively.

  4. Effect of defects on the electrical/optical performance of gallium nitride based junction devices

    NASA Astrophysics Data System (ADS)

    Ferdous, Mohammad Shahriar

    Commercial GaN based electronic and optoelectronic devices possess a high density (107-109 cm-2) of threading dislocations (TDs) because of the large mismatch in the lattice constant and the thermal expansion coefficient between the epitaxial layer structure and the substrate. In spite of these dislocations, high brightness light emitting diodes (LEDs) utilizing InGaN or AlGaN multiple quantum wells (MQWs) and with an external quantum efficiency of more than 40%, have already been achieved. This high external quantum efficiency in the presence of a high density of dislocations has been explained by carrier localization induced by indium fluctuations in the quantum well. TDs have been found to increase the reverse leakage current in InGaN based LEDs and to shorten the operating lifetime of InGaN MQW/GaN/AlGaN laser diodes. Thus it is important that the TD density is further reduced. It remains unclear how the TDs interact with the device to cause the effects mentioned above, hence the careful and precise characterization of threading defects and their effects on the electrical and optical performances of InGaN/GaN MQW LEDs is needed. This investigation will be useful not only from the point of view of device optimization but also to develop a clear understanding of the physical processes associated with TDs and especially with their effect on leakage current. We have employed photoelectrochemical (PEC) etching to accurately measure the dislocation density initially in home-grown GaN-based epitaxial structures and recently in InGaN/GaN MQW LEDs fabricated from commercial grade epitaxial structures that were supplied by our industrial collaborators. Measuring the electrical and electroluminescence (EL) characteristics of these devices has revealed correlations between some aspects of the LED behavior and the TD density, and promises to allow a deeper understanding of the role of threading dislocations to be elucidated. We observed that the LED reverse leakage current

  5. Electroluminescent device having improved light output

    DOEpatents

    Tyan,; Yuan-Sheng, [Webster, NY; Preuss, Donald R [Rochester, NY; Farruggia, Giuseppe [Webster, NY; Kesel, Raymond A [Avon, NY; Cushman, Thomas R [Rochester, NY

    2011-03-22

    An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

  6. Co-deposition methods for the fabrication of organic optoelectronic devices

    DOEpatents

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  7. Efficient Blue Electroluminescence Using Quantum-Confined Two-Dimensional Perovskites.

    PubMed

    Kumar, Sudhir; Jagielski, Jakub; Yakunin, Sergii; Rice, Peter; Chiu, Yu-Cheng; Wang, Mingchao; Nedelcu, Georgian; Kim, Yeongin; Lin, Shangchao; Santos, Elton J G; Kovalenko, Maksym V; Shih, Chih-Jen

    2016-10-03

    Solution-processed hybrid organic-inorganic lead halide perovskites are emerging as one of the most promising candidates for low-cost light-emitting diodes (LEDs). However, due to a small exciton binding energy, it is not yet possible to achieve an efficient electroluminescence within the blue wavelength region at room temperature, as is necessary for full-spectrum light sources. Here, we demonstrate efficient blue LEDs based on the colloidal, quantum-confined 2D perovskites, with precisely controlled stacking down to one-unit-cell thickness (n = 1). A variety of low-k organic host compounds are used to disperse the 2D perovskites, effectively creating a matrix of the dielectric quantum wells, which significantly boosts the exciton binding energy by the dielectric confinement effect. Through the Förster resonance energy transfer, the excitons down-convert and recombine radiatively in the 2D perovskites. We report room-temperature pure green (n = 7-10), sky blue (n = 5), pure blue (n = 3), and deep blue (n = 1) electroluminescence, with record-high external quantum efficiencies in the green-to-blue wavelength region.

  8. Study of microstructure and electroluminescence of zinc sulfide thin film

    NASA Astrophysics Data System (ADS)

    Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

    1998-03-01

    The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

  9. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Meng, Qiushi; Zhang, Chao; Zhang, Yang, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within severalmore » molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.« less

  10. Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction.

    PubMed

    Yin, Yu-Feng; Lin, Yen-Chen; Tsai, Tsung-Han; Shen, Yi-Chun; Huang, Jianjang

    2013-01-15

    In recent years, researchers have demonstrated negative refraction theoretically and experimentally by pumping optical power into photonic crystal (PhC) or waveguide structures. The concept of negative refraction can be used to create a perfect lens that focuses an object smaller than the wavelength. By inserting two-dimensional PhCs into the peripheral of a semiconductor light emitting structure, this study presents an electroluminescent device with negative refraction in the visible wavelength range. This approach produces polarization dependent collimation behavior in far-field radiation patterns. The modal dispersion of negative refraction results in strong group velocity modulation, and self-focusing and -defocusing behaviors are apparent from light extraction. This study further verifies experimental results by using theoretic calculations based on equifrequency contours.

  11. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  12. Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

    2017-10-01

    We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

  13. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

    The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

  14. Encapsulation methods and dielectric layers for organic electrical devices

    DOEpatents

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  15. Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly(3-hexylthiophene) dual heterojunctions.

    PubMed

    Chen, Yungting; Shih, Hanyu; Wang, Chunhsiung; Hsieh, Chunyi; Chen, Chihwei; Chen, Yangfang; Lin, Taiyuan

    2011-05-09

    Based on hybrid inorganic/organic n-ZnO nanorods/p-GaN thin film/poly(3-hexylthiophene)(P3HT) dual heterojunctions, the light emitting diode (LED) emits ultraviolet (UV) radiation (370 nm - 400 nm) and the whole visible light (400 nm -700 nm) at the low injection current density. Meanwhile, under the high injection current density, the UV radiation overwhelmingly dominates the room-temperature electroluminescence spectra, exponentially increases with the injection current density and possesses a narrow full width at half maximum less than 16 nm. Comparing electroluminescence with photoluminescence spectra, an enormously enhanced transition probability of the UV luminescence in the electroluminescence spectra was found. The P3HT layer plays an essential role in helping the UV emission from p-GaN material because of its hole-conductive characteristic as well as the band alignment with respect to p-GaN. With our new finding, the result shown here may pave a new route for the development of high brightness LEDs derived from hybrid inorganic/organic heterojuctions.

  16. Electroluminescence and cathodoluminescence from polyethylene and polypropylene films: Spectra reconstruction from elementary components and underlying mechanisms

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    The mechanisms of electroluminescence from large band gap polymers used as insulation in electric components are still under debate. It becomes important to unravel the underlying physics of the emission because of increasing thermo-electric stress and a possible relationship between electroluminescence and field withstand. We report herein on the cathodoluminescence spectra of polyethylene and polypropylene films as a way to uncover the nature of its contributions to electroluminescence emission. It is shown that spectra from the two materials are structured around four elementary components, each of them being associated with a specific process contributing to the overall emission with differentmore » weights depending on excitation conditions and on materials. The cathodoluminescence and electroluminescence spectra of each material are reconstructed from the four spectral components and their relative contribution are discussed. It is shown that electroluminescence from polyethylene and polypropylene has the same origin pointing towards generic mechanisms in both.« less

  17. Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    NASA Astrophysics Data System (ADS)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  18. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  19. Performance evaluation of multi-junction solar cells by spatially resolved electroluminescence microscopy.

    PubMed

    Kong, Lijing; Wu, Zhiming; Chen, Shanshan; Cao, Yiyan; Zhang, Yong; Li, Heng; Kang, Junyong

    2015-01-01

    An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.

  20. Transistor and memory devices based on novel organic and biomaterials

    NASA Astrophysics Data System (ADS)

    Tseng, Jia-Hung

    Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with

  1. Organic light-emitting devices using spin-dependent processes

    DOEpatents

    Vardeny, Z. Valy; Wohlgenannt, Markus

    2010-03-23

    The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

  2. Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness.

    PubMed

    Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

    2016-12-01

    We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

  3. Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

    NASA Astrophysics Data System (ADS)

    Chen, Cheng; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhang, Wei; Liang, Renli; Dai, Jiangnan; Chen, Changqing

    2016-10-01

    We demonstrate the fabrication and characterization of localized surface plasmon (LSP)-enhanced n-ZnO quantum dot (QD)/MgO/p-GaN heterojunction light-emitting diodes (LEDs) by embedding Ag nanoparticles (Ag-NPs) into the ZnO/MgO interface. The maximum enhancement ration of the Ag-NP-decorated LEDs in electroluminescence (EL) is 4.3-fold by optimizing MgO electron-blocking layer thickness. The EL origination was investigated qualitatively in terms of photoluminescence (PL) results. Through analysis of the energy band structure of device and carrier transport mechanisms, it suggests that the EL enhancement is attributed to the increased rate of spontaneous emission and improved internal quantum efficiency induced by exciton-LSP coupling.

  4. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

    PubMed Central

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

  5. Si based GeSn light emitter: mid-infrared devices in Si photonics

    NASA Astrophysics Data System (ADS)

    Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

    2015-02-01

    Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

  6. Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method

    NASA Astrophysics Data System (ADS)

    Sasaki, Fumio; Nguyen, Van-Cao; Yanagi, Hisao

    2018-03-01

    Optically pumped lasing and electroluminescence (EL) have been observed in solution-processed perovskite semiconducting materials of formamidinium lead bromide, CH(NH2)2PbBr3. Microcavities with flat surfaces and sharp edges have been easily obtained by the simple solution process called the “cast-capping method”. The crystals show clear multimode lasing of Fabry-Pérot cavities. The mode intervals are well explained by the optical constants with large dispersions of the materials. We have also fabricated EL devices and obtained clear EL in a single layer of the materials, but the EL intensity has been quenched rapidly.

  7. High-sensitivity strain visualization using electroluminescence technologies

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Jo, Hongki

    2016-04-01

    Visualizing mechanical strain/stress changes is an emerging area in structural health monitoring. Several ways are available for strain change visualization through the color/brightness change of the materials subjected to the mechanical stresses, for example, using mechanoluminescence (ML) materials and mechanoresponsive polymers (MRP). However, these approaches were not effectively applicable for civil engineering system yet, due to insufficient sensitivity to low-level strain of typical civil structures and limitation in measuring both static and dynamic strain. In this study, design and validation for high-sensitivity strain visualization using electroluminescence technologies are presented. A high-sensitivity Wheatstone bridge, of which bridge balance is precisely controllable circuits, is used with a gain-adjustable amplifier. The monochrome electroluminescence (EL) technology is employed to convert both static and dynamic strain change into brightness/color change of the EL materials, through either brightness change mode (BCM) or color alternation mode (CAM). A prototype has been made and calibrated in lab, the linearity between strain and brightness change has been investigated.

  8. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  9. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    PubMed

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  10. Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

    NASA Astrophysics Data System (ADS)

    Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.

    2017-11-01

    In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.

  11. Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

    2012-12-01

    Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

  12. Tentative anatomy of ZnS-type electroluminescence

    NASA Astrophysics Data System (ADS)

    Bringuier, E.

    1994-05-01

    The paper reviews the electrical and optical mechanisms at work in sulfide-based thin-film electroluminescence display devices within the framework of general semiconductor physics. The electrical problem is twofold: (i) charge carriers are sourced at high electric field in a nominally insulating material, the carrier density increasing by almost eight orders of magnitude; (ii) the carriers are transported at high field, with an average energy largely exceeding the thermal one. (i) Carrier sourcing is best understood from direct-current-driven ZnS films, and is ascribed to partly filled deep donors transferring electrons to the conduction band by Fowler-Nordheim tunneling. The deep donors also act as carrier sinkers, and evidence for space charge is afforded by small-signal impedance analysis disclosing a markedly inductive behavior. The conduction picture obtained from dc-driven films is then used to clarify the operation of alternating-current electroluminescence structures where the sulfide is sandwiched between two blocking oxide layers. The electrostatics of the ac structure is investigated in detail including space charge and field nonuniformity, and external observables are related to internal quantities. The simple model of interfacial carrier sourcing and sinking is examined. (ii) High-field electronic transport is controlled by the electron-phonon interaction, and the modeling resorts to numerical simulations or the lucky-drift concept. At low electron energies the interaction with phonons is predominantly polar, while at optical energies it proceeds via deformation potential scattering. In spite of the uncertainties in transport models in that range, it is likely that ˜50% of the electrons overtake 2 eV at the usual operating fields in ZnS. Light emission is associated with impurity luminescence centers embedded in the sulfide host. They are excited while current is flowing, and the ensuing relaxation is partly radiative. We describe the two ways in

  13. Detection of microstructural defects in chalcopyrite Cu(In,Ga)Se2 solar cells by spectrally-filtered electroluminescence

    NASA Astrophysics Data System (ADS)

    Skvarenina, L.; Gajdos, A.; Macku, R.; Skarvada, P.

    2017-12-01

    The aim of this research is to detect and localize microstructural defects by using an electrically excited light emission from a forward/reverse-bias stressed pn-junction in thin-film Cu(In; Ga)Se2 solar cells with metal wrap through architecture. A different origin of the local light emission from intrinsic/extrinsic imperfections in these chalcopyrite-based solar cells can be distinguished by a spectrally-filtered electroluminescence mapping. After a light emission mapping and localization of the defects in a macro scale is performed a micro scale exploration of the solar cell surface by a scanning electron microscope which follows the particular defects obtained by an electroluminescence. In particular, these macroscopic/microscopic examinations are performed independently, then the searching of the corresponding defects in the micro scale is rather difficult due to a diffused light emission obtained from the macro scale localization. Some of the defects accompanied by a highly intense light emission very often lead to a strong local overheating. Therefore, the lock-in infrared thermography is also performed along with an electroluminescence mapping.

  14. Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence

    PubMed Central

    Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K. L.; Sum, Tze Chien; Huang, Wei

    2017-01-01

    The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 1015 cm−3, defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence. PMID:28239146

  15. Transcending the slow bimolecular recombination in lead-halide perovskites for electroluminescence.

    PubMed

    Xing, Guichuan; Wu, Bo; Wu, Xiangyang; Li, Mingjie; Du, Bin; Wei, Qi; Guo, Jia; Yeow, Edwin K L; Sum, Tze Chien; Huang, Wei

    2017-02-27

    The slow bimolecular recombination that drives three-dimensional lead-halide perovskites' outstanding photovoltaic performance is conversely a fundamental limitation for electroluminescence. Under electroluminescence working conditions with typical charge densities lower than 10 15  cm -3 , defect-states trapping in three-dimensional perovskites competes effectively with the bimolecular radiative recombination. Herein, we overcome this limitation using van-der-Waals-coupled Ruddlesden-Popper perovskite multi-quantum-wells. Injected charge carriers are rapidly localized from adjacent thin few layer (n≤4) multi-quantum-wells to the thick (n≥5) multi-quantum-wells with extremely high efficiency (over 85%) through quantum coupling. Light emission originates from excitonic recombination in the thick multi-quantum-wells at much higher decay rate and efficiency than bimolecular recombination in three-dimensional perovskites. These multi-quantum-wells retain the simple solution processability and high charge carrier mobility of two-dimensional lead-halide perovskites. Importantly, these Ruddlesden-Popper perovskites offer new functionalities unavailable in single phase constituents, permitting the transcendence of the slow bimolecular recombination bottleneck in lead-halide perovskites for efficient electroluminescence.

  16. Ex post manipulation of barriers in InGaAs tunnel injection devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Talalaev, Vadim G.; Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504; Cirlin, George E.

    Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

  17. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originatedmore » from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.« less

  18. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  19. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    NASA Astrophysics Data System (ADS)

    Tregnago, G.; Fléchon, C.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.; Cacialli, F.

    2014-10-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ˜1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ˜1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  20. Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ran, G. Z.; Jiang, D. F.; Kan, Q.; Chen, H. D.

    2010-12-01

    We have observed a strongly polarized edge-emission from an organic light emitting device (OLED) with a silicon anode and a stacked Sm/Au (or Ag) cathode. For the OLED with a Sm/Au cathode, the transverse magnetic (TM) mode is stronger than the transverse electric (TE) mode by a factor of 2, while the polarization ratio of TM:TE is close to 300 for that with a Sm/Ag cathode. The polarization results from the scattering of surface plasmon polaritons at the device boundary. Such a silicon-based OLED is potentially an electrically excited SPP source in plasmonics.

  1. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states ofmore » quantum dots at the type-II InSb/InAs heterointerface.« less

  2. A Laboratory-Based Course in Display Technology

    ERIC Educational Resources Information Center

    Sarik, J.; Akinwande, A. I.; Kymissis, I.

    2011-01-01

    A laboratory-based class in flat-panel display technology is presented. The course introduces fundamental concepts of display systems and reinforces these concepts through the fabrication of three display devices--an inorganic electroluminescent seven-segment display, a dot-matrix organic light-emitting diode (OLED) display, and a dot-matrix…

  3. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  4. Electroluminescence and Photoluminescence from a Fluorescent Cobalt Porphyrin Grafted on Graphene Oxide

    NASA Astrophysics Data System (ADS)

    Janghouri, Mohammad

    2017-10-01

    A new graphene oxide-cobalt porphyrin (GO-CoTPP) hybrid material has been used as an emissive layer in organic light-emitting diodes (OLEDs). Devices with fundamental structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS, 45 nm)/polyvinylcarbazole (PVK):2-(4-biphenyl)-5-(4- t-butylphenyl)-1,3,4-oxadiazole (PBD):GO-CoTPP (70 nm)/1,3,5-tris( N-phenylbenzimidazol-2-yl)-benzene (TPBI, 20 nm)/Al (150 nm) were fabricated. A red electroluminescence (EL) was obtained from thin-film PVK:PBD:CoTPP at 70 nm thickness. When CoTPP was covalently grafted on graphene oxide (GO) sheets, near-white EL was obtained. The white emission, which was composed of bluish green and red, is attributed to electroplex formation at the GO-CoTPP/PBD interface. Such electroplex emission between electrons and holes is a reason for the low turn-on voltage of the GO-CoTPP-based OLED. Maximum luminance efficiency of 1.43 cd/A with Commission International de l'Eclairage coordinates of 0.33 and 0.40 was achieved at current of 0.02 mA and voltage of 14 V.

  5. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound state energies. The calculations were then applied to a new superlattice structure, the variablly spaced superlattice energy filter, (VSSEP) which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

  6. Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.

    PubMed

    Fang, Fang; Zhao, Dongxu; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2010-07-07

    Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.

  7. Sub-bandgap Voltage Electroluminescence and Magneto-oscillations in a WSe2 Light-Emitting van der Waals Heterostructure.

    PubMed

    Binder, Johannes; Withers, Freddie; Molas, Maciej R; Faugeras, Clement; Nogajewski, Karol; Watanabe, Kenji; Taniguchi, Takashi; Kozikov, Aleksey; Geim, Andre K; Novoselov, Kostya S; Potemski, Marek

    2017-03-08

    We report on experimental investigations of an electrically driven WSe 2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe 2 . This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy.

  8. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    NASA Astrophysics Data System (ADS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-09-01

    Ce-doped CaGa2S4 and SrGa2S4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H2S and O2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce3+ activated CaGa2S4 and SrGa2S4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O2 gas stream.

  9. Tuning emission color of electroluminescence from two organic interfacial exciplexes by modulating the thickness of middle gadolinium complex layer

    NASA Astrophysics Data System (ADS)

    Li, Mingtao; Li, Wenlian; Chen, Lili; Kong, Zhiguo; Chu, Bei; Li, Bin; Hu, Zhizhi; Zhang, Zhiqiang

    2006-02-01

    Electroluminescent colors of organic light-emitting diodes (OLEDs) can be tuned by modulating the thickness of gadolinium (Gd) complex layer sandwiched between an electron-transporting layer (ETL) and a hole-transporting layer (HTL). The emission colors, which originate from the two interfacial exciplexes simultaneously, can be tuned from green to orange by increasing the thickness of the Gd-complex layer. The atom force microscope images have proved that there are many gaps in the thinner Gd-complex layers. Therefore, besides the exciplex formation between Gd complex and HTL, the exciplex between ETL and HTL is also formed. The results demonstrate that a simple way of color tuning can be realized by inserting a thin layer of color tuning material between HTL with lower ionization potentials and ETL with higher electron affinities. Moreover, photovoltaic device and white OLED based on the two exciplexes are also discussed.

  10. Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

    NASA Technical Reports Server (NTRS)

    Hersam, Mark C. (Inventor); Pingree, Liam S. C. (Inventor)

    2008-01-01

    A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

  11. Durable electrooptic devices comprising ionic liquids

    DOEpatents

    Agrawal, Anoop; Cronin, John P.; Tonazzi, Juan C. L.; Warner, Benjamin P.; McCleskey, T. Mark; Burrell, Anthony K.

    2005-11-01

    Electrolyte solutions for electrochromic devices such as rear view mirrors and displays with low leakage currents are prepared using inexpensive, low conductivity conductors. Preferred electrolytes include bifunctional redox dyes and molten salt solvents with enhanced stability toward ultraviolet radiation. The solvents include lithium or quaternary ammonium cations, and perfluorinated sulfonylimide anions selected from trifluoromethylsulfonate (CF3SO3-), bis(trifluoromethylsulfonyl)imide ((CF3SO2)2N-), bis(perfluoroethylsulfonyl)imide ((CF3CF2SO2)2N-) and tris(trifluoromethylsulfonyl)methide ((CF3SO2)3C-). Electroluminescent, electrochromic and photoelectrochromic devices with nanostructured electrodes include ionic liquids with bifunctional redox dyes.

  12. Electroluminescent Yb2O3:Er and Yb2Si2O7:Er nanolaminate films fabricated by atomic layer deposition on silicon

    NASA Astrophysics Data System (ADS)

    Ouyang, Zhongtao; Yang, Yang; Sun, Jiaming

    2018-06-01

    Atomic layer doped Yb2O3:Er and Yb2Si2O7:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and ∼1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices (MOSLEDs) based on these films. The Yb2O3 films transfer to Yb2Si2O7 phase after annealing above 1000 °C. Intense photoluminescence from Yb2Si2O7 film confirms high efficiency and energy transfer under optical excitation, but the limited electron conduction restricts the EL performance. EL from the Yb2O3:Er MOSLED outperforms, presenting an external quantum efficiency up to 8.5% and the power efficiency of 1 × 10-3. The EL is derived to result from the impact excitation of Er3+ ions by hot electrons, which stem from Fowler-Nordheim tunneling mechanism under sufficient bias voltage. The critical distance for the cross relaxation of doped Er3+ ions in nanolaminate Yb2O3 matrix is experimentally determined to be ∼3 nm. Such devices manifest the technological potential of Er-doped Yb-oxides for applications in silicon-based optoelectronics.

  13. The electroluminescence of Xe-Ne gas mixtures: A Monte Carol simulation study

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Santos, F.P.; Dias, T.H.V.T.; Rachinhas, P.J.B.M.

    1998-04-01

    The authors have performed a Monte Carlo simulation of the drift of electrons through a mixture of gaseous xenon with the lighter noble gas neon at a total pressure of 1 atm. The electroluminescence characteristics and other transport parameters are investigated as a function of the reduced electric field and composition of the mixture. For Xe-Ne mixtures with 5, 10, 20, 40, 70, 90, and 100% of Xe, they present results for electroluminescence yield and excitation efficiency, average electron energy, electron drift velocity, reduced mobility, reduced diffusion coefficients, and characteristic energies over a range of reduced electric fields which excludemore » electron multiplication. For the 5% Xe mixture, they also assess the influence of electron multiplication on the electroluminescence yield. The present study of Xe-Ne mixtures was motivated by an interest in using them as a filling for gas proportional scintillation counters in low-energy X-ray applications. In this energy range, the X rays will penetrate further into the detector due to the presence of Ne, and this will lead to an improvement in the collection of primary electrons originating near the detector window and may represent an advantage over the use of pure Xe.« less

  14. Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

    PubMed Central

    2014-01-01

    Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. PACS 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn PMID:25489284

  15. Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.

    PubMed

    Dong, Jing-Jing; Hao, Hui-Ying; Xing, Jie; Fan, Zhen-Jun; Zhang, Zi-Li

    2014-01-01

    Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.

  16. 2-(2-Hydroxyphenyl)benzimidazole-based four-coordinate boron-containing materials with highly efficient deep-blue photoluminescence and electroluminescence.

    PubMed

    Zhang, Zhenyu; Zhang, Houyu; Jiao, Chuanjun; Ye, Kaiqi; Zhang, Hongyu; Zhang, Jingying; Wang, Yue

    2015-03-16

    Two novel four-coordinate boron-containing emitters 1 and 2 with deep-blue emissions were synthesized by refluxing a 2-(2-hydroxyphenyl)benzimidazole ligand with triphenylborane or bromodibenzoborole. The boron chelation produced a new π-conjugated skeleton, which rendered the synthesized boron materials with intense fluorescence, good thermal stability, and high carrier mobility. Both compounds displayed deep-blue emissions in solutions with very high fluorescence quantum yields (over 0.70). More importantly, the samples showed identical fluorescence in the solution and solid states, and the efficiency was maintained at a high level (approximately 0.50) because of the bulky substituents between the boron atom and the benzimidazole unit, which can effectively separate the flat luminescent units. In addition, neat thin films composed of 1 or 2 exhibited high electron and hole mobility in the same order of magnitude 10(-4), as determined by time-of-flight. The fabricated electroluminescent devices that employed 1 or 2 as emitting materials showed high-performance deep-blue emissions with Commission Internationale de L'Eclairage (CIE) coordinates of (X = 0.15, Y = 0.09) and (X = 0.16, Y = 0.08), respectively. Thus, the synthesized boron-containing materials are ideal candidates for fabricating high-performance deep-blue organic light-emitting diodes.

  17. Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

    PubMed Central

    Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

    2016-01-01

    Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

  18. Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

    PubMed

    Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

    2016-05-16

    Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

  19. Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies

    NASA Astrophysics Data System (ADS)

    Crooker, S. A.; Liu, F.; Kelley, M. R.; Martinez, N. J. D.; Nie, W.; Mohite, A.; Nayyar, I. H.; Tretiak, S.; Smith, D. L.; Ruden, P. P.

    2014-10-01

    We use spectrally resolved magneto-electroluminescence (EL) measurements to study the energy dependence of hyperfine interactions between polaron and nuclear spins in organic light-emitting diodes. Using layered devices that generate bright exciplex emission, we show that the increase in EL emission intensity I due to small applied magnetic fields of order 100 mT is markedly larger at the high-energy blue end of the EL spectrum (ΔI/I ˜ 11%) than at the low-energy red end (˜4%). Concurrently, the widths of the magneto-EL curves increase monotonically from blue to red, revealing an increasing hyperfine coupling between polarons and nuclei and directly providing insight into the energy-dependent spatial extent and localization of polarons.

  20. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lu, Y. F.; Cao, X. A., E-mail: xacao@mail.wvu.edu

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasinglymore » dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.« less

  1. Synthesis, structures, and electroluminescent properties of scandium N,O-chelated complexes toward near-white organic light-emitting diodes.

    PubMed

    Katkova, Marina A; Balashova, Tatyana V; Ilichev, Vasilii A; Konev, Alexey N; Isachenkov, Nikolai A; Fukin, Georgy K; Ketkov, Sergey Yu; Bochkarev, Mikhail N

    2010-06-07

    Three members of a new class of electroluminescent, neutral, and monomeric scandium N,O-chelate complexes, namely, Sc(III)-tris-2-(2-benzoimidazol-2-yl)phenolate (1), Sc(III)-tris-2-(2-benzoxyazol-2-yl)phenolate (2), and Sc(III)-tris-2-(2-benzothiazol-2-yl)phenolate (3), have been prepared and X-ray characterized. DFT calculations have been performed. In contrast to the most frequently applied dual or multiple dopants in multilayer white OLED devices, all our simpler devices with the configuration of indium tin oxide/N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine/neat scandium complex/Yb exhibit close to near-white emission with a blue hue (CIE(x,y) = 0.2147, 0.2379) in the case of 1, a cyan hue (0.2702, 0.3524) in the case of 2, and a yellowish hue (0.3468; 0.4284) in the case of 3.

  2. High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter

    NASA Astrophysics Data System (ADS)

    Kim, Dae-Hyeon; D'Aléo, Anthony; Chen, Xian-Kai; Sandanayaka, Atula D. S.; Yao, Dandan; Zhao, Li; Komino, Takeshi; Zaborova, Elena; Canard, Gabriel; Tsuchiya, Youichi; Choi, Eunyoung; Wu, Jeong Weon; Fages, Frédéric; Brédas, Jean-Luc; Ribierre, Jean-Charles; Adachi, Chihaya

    2018-02-01

    Near-infrared organic light-emitting diodes and semiconductor lasers could benefit a variety of applications including night-vision displays, sensors and information-secured displays. Organic dyes can generate electroluminescence efficiently at visible wavelengths, but organic light-emitting diodes are still underperforming in the near-infrared region. Here, we report thermally activated delayed fluorescent organic light-emitting diodes that operate at near-infrared wavelengths with a maximum external quantum efficiency of nearly 10% using a boron difluoride curcuminoid derivative. As well as an effective upconversion from triplet to singlet excited states due to the non-adiabatic coupling effect, this donor-acceptor-donor compound also exhibits efficient amplified spontaneous emission. By controlling the polarity of the active medium, the maximum emission wavelength of the electroluminescence spectrum can be tuned from 700 to 780 nm. This study represents an important advance in near-infrared organic light-emitting diodes and the design of alternative molecular architectures for photonic applications based on thermally activated delayed fluorescence.

  3. Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

    PubMed Central

    Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

    2016-01-01

    Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy. PMID:27677240

  4. Tunable electroluminescent color for 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds

    NASA Astrophysics Data System (ADS)

    Cheng, Gang; Zhang, Yingfang; Zhao, Yi; Liu, Shiyong; Xie, Zengqi; Xia, Hong; Hanif, Muddasir; Ma, Yuguang

    2005-07-01

    Exciplex emission is observed in electroluminescent (EL) spectrum of an organic light-emitting device (OLED), where 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds (trans-DPDSB), (8-hydroxyquinoline) aluminum, and N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) are used as light-emitting, electron-transporting, and hole-transporting layers, respectively. This emission can be dramatically weakened by inserting a hole-injecting layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) between the hole-transporting layer and the anode. Consequently, EL color of this OLED is tuned from white to blue. This phenomenon may result from the improvement of hole injection, which shifts the major recombination zone from the NPB/trans-DPDSB interface to the trans-DPDSB layer.

  5. Spectral broadening in electroluminescence of white organic light-emitting diodes based on complementary colors

    NASA Astrophysics Data System (ADS)

    Kim, Young Min; Park, Young Wook; Choi, Jin Hwan; Ju, Byeong Kwon; Jung, Jae Hoon; Kim, Jai Kyeong

    2007-01-01

    The authors report the optical and electroluminescent (EL) properties of white organic light-emitting diodes (OLEDs) which have two emitters with similar structures: 1, 1, 4, 4-tetraphenyl-1, 3-butadiene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline have an emission peak of 400nm around the near ultraviolet, and tris-(8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran has an emission peak of 580nm producing a yellow color. The EL spectra of the white OLED have shown a broadening through visual range from 400to780nm. This spectral broadening is related to an exciplex emission at the organic solid interface.

  6. Electroluminescence from single-wall carbon nanotube network transistors.

    PubMed

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  7. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    NASA Astrophysics Data System (ADS)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  8. Discrimination between spin-dependent charge transport and spin-dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance

    NASA Astrophysics Data System (ADS)

    Kavand, Marzieh; Baird, Douglas; van Schooten, Kipp; Malissa, Hans; Lupton, John M.; Boehme, Christoph

    2016-08-01

    Spin-dependent processes play a crucial role in organic electronic devices. Spin coherence can give rise to spin mixing due to a number of processes such as hyperfine coupling, and leads to a range of magnetic field effects. However, it is not straightforward to differentiate between pure single-carrier spin-dependent transport processes which control the current and therefore the electroluminescence, and spin-dependent electron-hole recombination which determines the electroluminescence yield and in turn modulates the current. We therefore investigate the correlation between the dynamics of spin-dependent electric current and spin-dependent electroluminescence in two derivatives of the conjugated polymer poly(phenylene-vinylene) using simultaneously measured pulsed electrically detected (pEDMR) and optically detected (pODMR) magnetic resonance spectroscopy. This experimental approach requires careful analysis of the transient response functions under optical and electrical detection. At room temperature and under bipolar charge-carrier injection conditions, a correlation of the pEDMR and the pODMR signals is observed, consistent with the hypothesis that the recombination currents involve spin-dependent electronic transitions. This observation is inconsistent with the hypothesis that these signals are caused by spin-dependent charge-carrier transport. These results therefore provide no evidence that supports earlier claims that spin-dependent transport plays a role for room-temperature magnetoresistance effects. At low temperatures, however, the correlation between pEDMR and pODMR is weakened, demonstrating that more than one spin-dependent process influences the optoelectronic materials' properties. This conclusion is consistent with prior studies of half-field resonances that were attributed to spin-dependent triplet exciton recombination, which becomes significant at low temperatures when the triplet lifetime increases.

  9. Durable electrooptic devices comprising ionic liquids

    DOEpatents

    Burrell, Anthony K [Los Alamos, NM; Agrawal, Anoop [Tucson, AZ; Cronin,; John, P [Tucson, AZ; Tonazzi, Juan C. L. [Tucson, AZ; Warner, Benjamin P [Los Alamos, NM; McCleskey, T Mark [Los Alamos, NM

    2009-12-15

    Electrolyte solutions for electrochromic devices such as rear view mirrors and displays with low leakage currents are prepared using inexpensive, low conductivity conductors. Preferred electrolytes include bifunctional redox dyes and molten salt solvents with enhanced stability toward ultraviolet radiation. The solvents include lithium or quaternary ammonium cations, and perfluorinated sulfonylimide anions selected from trifluoromethylsulfonate (CF.sub.3SO.sub.3.sup.-), bis(trifluoromethylsulfonyl)imide ((CF.sub.3SO.sub.2).sub.2N.sup.-), bis(perfluoroethylsulfonyl)imide ((CF.sub.3CF.sub.2SO.sub.2).sub.2N.sup.-) and tris(trifluoromethylsulfonyl)methide ((CF.sub.3SO.sub.2).sub.3C.sup.-). Electroluminescent, electrochromic and photoelectrochromic devices with nanostructured electrodes include ionic liquids with bifunctional redox dyes. Some of the electrolyte solutions color to red when devices employing the solutions are powered, leading to red or neutral electrooptic devices.

  10. Durable Electrooptic Devices Comprising Ionic Liquids

    DOEpatents

    Burrell, Anthony K.; Agrawal, Anoop; Cronin, John P.; Tonazzi, Juan C. L.; Warner, Benjamin P.; McCleskey, T. Mark

    2008-11-11

    Electrolyte solutions for electrochromic devices such as rear view mirrors and displays with low leakage currents are prepared using inexpensive, low conductivity conductors. Preferred electrolytes include bifunctional redox dyes and molten salt solvents with enhanced stability toward ultraviolet radiation. The solvents include lithium or quaternary ammonium cations, and perfluorinated sulfonylimide anions selected from trifluoromethylsulfonate (CF.sub.3SO.sub.3.sup.-), bis(trifluoromethylsulfonyl)imide ((CF.sub.3SO.sub.2).sub.2N.sup.-), bis(perfluoroethylsulfonyl)imide ((CF.sub.3CF.sub.2SO.sub.2).sub.2N.sup.-) and tris(trifluoromethylsulfonyl)methide ((CF.sub.3SO.sub.2).sub.3C.sup.-). Electroluminescent, electrochromic and photoelectrochromic devices with nanostructured electrodes include ionic liquids with bifunctional redox dyes. Some of the electrolyte solutions color to red when devices employing the solutions are powered, leading to red or neutral electrooptic devices.

  11. Bias-polarity-dependent UV/visible transferable electroluminescence from ZnO nanorod array LED with graphene oxide electrode supporting layer

    NASA Astrophysics Data System (ADS)

    Liu, Weizhen; Wang, Wei; Xu, Haiyang; Li, Xinghua; Yang, Liu; Ma, Jiangang; Liu, Yichun

    2015-09-01

    A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN.

  12. Method to generate high efficient devices which emit high quality light for illumination

    DOEpatents

    Krummacher, Benjamin C.; Mathai, Mathew; Choong, Vi-En; Choulis, Stelios A.

    2009-06-30

    An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

  13. Photofunctional triplet excited states of cyclometalated Ir(III) complexes: beyond electroluminescence.

    PubMed

    You, Youngmin; Nam, Wonwoo

    2012-11-07

    The development of cyclometalated Ir(III) complexes has enabled important breakthroughs in electroluminescence because such complexes permit the efficient population of triplet excited states that give rise to luminescent transitions. The triplet states of Ir(III) complexes are advantageous over those of other transition metal complexes in that their electronic transitions and charge-transfer characteristics are tunable over wide ranges. These favorable properties suggest that Ir(III) complexes have significant potential in a variety of photofunctions other than electroluminescence. In this critical review, we describe recent photonic applications of novel Ir(III) complexes. Ir(III) complexes have been shown to affect the exciton statistics in the active layers of organic photovoltaic cells, thereby improving the photon-to-current conversion efficiencies. Nonlinear optical applications that take advantage of the strong charge-transfer properties of triplet transitions are also discussed. The tunability of the electrochemical potentials facilitates the development of efficient photocatalysis in the context of water photolysis or organic syntheses. The photoredox reactivities of Ir(III) complexes have been employed in studies of charge migration along DNA chains. The photoinduced cytotoxicity of Ir(III) complexes on live cells suggests that the complexes may be useful in photodynamic therapy. Potential biological applications of the complexes include phosphorescence labeling and sensing. Intriguing platforms based on cyclometalated Ir(III) complexes potentially provide novel protein tagging and ratiometric detection. We envision that future research into the photofunctionality of Ir(III) complexes will provide important breakthroughs in a variety of photonic applications.

  14. Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

    2018-04-01

    Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

  15. Mixing of phosphorescent and exciplex emission in efficient organic electroluminescent devices.

    PubMed

    Cherpak, Vladyslav; Stakhira, Pavlo; Minaev, Boris; Baryshnikov, Gleb; Stromylo, Evgeniy; Helzhynskyy, Igor; Chapran, Marian; Volyniuk, Dmytro; Hotra, Zenon; Dabuliene, Asta; Tomkeviciene, Ausra; Voznyak, Lesya; Grazulevicius, Juozas Vidas

    2015-01-21

    We fabricated a yellow organic light-emitting diode (OLED) based on the star-shaped donor compound tri(9-hexylcarbazol-3-yl)amine, which provides formation of the interface exciplexes with the iridium(III) bis[4,6-difluorophenyl]-pyridinato-N,C2']picolinate (FIrpic). The exciplex emission is characterized by a broad band and provides a condition to realize the highly effective white OLED. It consists of a combination of the blue phosphorescent emission from the FIrpic complex and a broad efficient delayed fluorescence induced by thermal activation with additional direct phosphorescence from the triplet exciplex formed at the interface. The fabricated exciplex-type device exhibits a high brightness of 38 000 cd/m(2) and a high external quantum efficiency.

  16. Abnormal temperature dependent behaviors of intersystem crossing and triplet-triplet annihilation in organic planar heterojunction devices

    NASA Astrophysics Data System (ADS)

    Xiang, Jie; Chen, Yingbing; Yuan, De; Jia, Weiyao; Zhang, Qiaoming; Xiong, Zuhong

    2016-09-01

    Anomalous temperature dependent magneto-electroluminescence was observed at low and high magnetic field strength from organic planar heterojunction devices incorporated common phosphorescent host materials of N,N'-dicarbazolyl-3,5-benzene (mCP) or 4,4'-N,N'-dicarbazole-biphenyl (CBP) as an emissive layer. We found that intersystem crossing became stronger with decreasing temperature and that triplet-triplet annihilation (TTA) occurred at room temperature but ceased at low temperature. Analyses of the electroluminescence spectra of these devices and their temperature dependences indicated that the population of exciplex states increased at low temperature, which caused the abnormal behavior of intersystem crossing. Additionally, long lifetime of the excitons within mCP or CBP layer may allow TTA to occur at room temperature, while the reduced population of excitons at low temperature may account for the disappearance of TTA even though the excitons had increased lifetime.

  17. Interface-Free Area-Scalable Self-Powered Electroluminescent System Driven by Triboelectric Generator

    PubMed Central

    Yan Wei, Xiao; Kuang, Shuang Yang; Yang Li, Hua; Pan, Caofeng; Zhu, Guang; Wang, Zhong Lin

    2015-01-01

    Self-powered system that is interface-free is greatly desired for area-scalable application. Here we report a self-powered electroluminescent system that consists of a triboelectric generator (TEG) and a thin-film electroluminescent (TFEL) lamp. The TEG provides high-voltage alternating electric output, which fits in well with the needs of the TFEL lamp. Induced charges pumped onto the lamp by the TEG generate an electric field that is sufficient to excite luminescence without an electrical interface circuit. Through rational serial connection of multiple TFEL lamps, effective and area-scalable luminescence is realized. It is demonstrated that multiple types of TEGs are applicable to the self-powered system, indicating that the system can make use of diverse mechanical sources and thus has potentially broad applications in illumination, display, entertainment, indication, surveillance and many others. PMID:26338365

  18. Multilayer organic based structures with enhanced hole transport

    NASA Astrophysics Data System (ADS)

    Mladenova, D.; Sinigersky, V.; Budurova, D.; Dobreva, T.; Karashanova, D.; Dimov, D.; Zhivkov, I.

    2010-11-01

    Multilayer Organic Based Devices (OBDs) were constructed by subsequent casting of organic films (from polymers, soluble in the same organic solvent). The problem with dissolution of the underlying layer was avoided by using electrophoretic deposition technique. Optimized conditions for electrophoretic deposition (EPD) of thin films with homogeneous and smooth surfaces, as confirmed by SEM, were found. The EPD, carried out at constant current, requires continuous increase of the voltage between the electrodes. In this way the decreased deposition rate caused by the decreased concentration of the material in the suspension and the increased thickness of the film deposited is compensated. The SEM images and the current voltage characteristics recorded, show that the hole transport polyvinylcarbazole (PVK) underlayer survive the treatment with the suspension used for the electrophoretic deposition of the active poly[2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene vinylene] electroluminescent layer. The PVK hole transport layer increases the device current, as confirmed by the current-voltage measurements. The results obtained demonstrate the possibility of OBDs preparation for electroluminescent and photovoltaic applications.

  19. Durable electrooptic devices comprising ionic liquids

    DOEpatents

    Warner, Benjamin P [Los Alamos, NM; McCleskey, T Mark [Los Alamos, NM; Burrell, Anthony K [Los Alamos, NM

    2006-10-10

    Electrolyte solutions for electrochromic devices such as rear view mirrors and displays with low leakage currents are prepared using inexpensive, low conductivity conductors. Preferred electrolytes include bifunctional redox dyes and molten salt solvents with enhanced stability toward ultraviolet radiation. The solvents include lithium or quaternary ammonium cations, and perfluorinated sulfonylimide anions selected from trifluoromethylsulfonate (CF.sub.3SO.sub.3.sup.-), bis(trifluoromethylsulfonyl)imide ((CF.sub.3SO.sub.2).sub.2N.sup.-), bis(perfluoroethylsulfonyl)imide ((CF.sub.3CF.sub.2SO.sub.2).sub.2N.sup.-) and tris(trifluoromethylsulfonyl)methide ((CF.sub.3SO.sub.2).sub.3C.sup.-). Electroluminescent, electrochromic and photoelectrochromic devices with nanostructured electrodes include ionic liquids with bifunctional redox dyes.

  20. Synthesis and electroluminescence characterization of a new aluminum complex, [8-hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q

    NASA Astrophysics Data System (ADS)

    Rahul, Kumar; Ritu, Srivastava; Punita, Singh

    2016-01-01

    We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis [2,2'bipyridine] aluminum. A solution of this material Al(Bpy)2q in toluene showed absorption maxima at 380 nm, which was attributed to the moderate energy (π-π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy)2q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to 300 °C. The structure of the device is ITO/F4-TCNQ (1 nm)/α-NPD (35 nm)/Al(Bpy)2q (35 nm)/ BCP (6 nm)/Alq3 (28 nm)/LiF (1 nm)/Al (150 nm). This device exhibited a luminescence peak at 515 nm (CIE coordinates, x = 0.32, y = 0.49). The maximum luminescence of the device was 214 cd/m2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V.

  1. Bluish-white-light-emitting diodes based on two-dimensional lead halide perovskite (C6H5C2H4NH3)2PbCl2Br2

    NASA Astrophysics Data System (ADS)

    Cai, Peiqing; Wang, Xiangfu; Seo, Hyo Jin; Yan, Xiaohong

    2018-04-01

    Bluish-white-light-emitting diodes (BWLEDs) are designed based on the two-dimensional mixed halide perovskite (C6H5C2H4NH3)2PbCl2Br2 at room temperature. Bluish-white electroluminescence devices were fabricated by a spin-coating method. The BWLEDs can be turned on at 4.9 V and depict a maximum luminance of ˜70 cd/m2 at 7 V. Low and room temperature photoluminescence spectra show the coexistence of free exciton and self-trapped exciton luminescence in a deformable lattice. The strategy of achieving white electroluminescence (EL) from mixed halide perovskite reported here can be applied to other two-dimensional perovskites to increase the optoelectronic efficiency of the device in the future.

  2. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

    2009-02-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  3. Two-dimensional radiant energy array computers and computing devices

    NASA Technical Reports Server (NTRS)

    Schaefer, D. H.; Strong, J. P., III (Inventor)

    1976-01-01

    Two dimensional digital computers and computer devices operate in parallel on rectangular arrays of digital radiant energy optical signal elements which are arranged in ordered rows and columns. Logic gate devices receive two input arrays and provide an output array having digital states dependent only on the digital states of the signal elements of the two input arrays at corresponding row and column positions. The logic devices include an array of photoconductors responsive to at least one of the input arrays for either selectively accelerating electrons to a phosphor output surface, applying potentials to an electroluminescent output layer, exciting an array of discrete radiant energy sources, or exciting a liquid crystal to influence crystal transparency or reflectivity.

  4. Cadmium-free quantum dot light emitting devices: energy-transfer realizing pure blue emission.

    PubMed

    Ji, Wenyu; Jing, Pengtao; Fan, Yi; Zhao, Jialong; Wang, Yunjun; Kong, Xianggui

    2013-01-01

    In this study, deep blue, pure electroluminescence (EL) at 441.5 nm from a ZnSe/ZnS quantum dot light-emitting device (QD-LED) is obtained by using poly (4-butylphenyl-diphenyl-amine) (poly-TPD) as the hole-transport layer (HTL) to open up the channel for energy transfer from poly-TPD to QDs. The emission originating from HTL is observed in the QD-LED with N,N'-bis (tolyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine functionalized with two styryl groups (2-TPD) as the HTL due to inefficient energy-transfer from 2-TPD to QDs. The poly-TPD based device exhibits color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum (~17.2 nm). These results explore the operating mechanism of the QD EL and signify a remarkable progress in deep blue QD-LEDs based on environmental-friendly QD materials.

  5. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Malysheva, E. I., E-mail: malysheva@phys.unn.ru; Dorokhin, M. V.; Ved’, M. V.

    2015-11-15

    The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n{sup +}-GaAs/GaMnAs and InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb heterostructures.

  6. The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rebohle, L., E-mail: l.rebohle@hzdr.de; Wutzler, R.; Braun, M.

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficienciesmore » in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.« less

  7. Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films.

    PubMed

    Hu, Youfan; Zhang, Yan; Lin, Long; Ding, Yong; Zhu, Guang; Wang, Zhong Lin

    2012-07-11

    We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions, the changing trend of the transport properties of GaN films can be divided into two types, corresponding to the different c-axis orientations of the films. An extreme value was observed for the integral EL intensity under certain applied strain due to the adjusted minority carrier injection efficiency by piezoelectric charges introduced at the M-S interface. The external quantum efficiency of the blue EL at 430 nm was changed by 5.84% under different straining conditions, which is 1 order of magnitude larger than the change of the green peak at 540 nm. The results indicate that the piezo-phototronic effect has a larger impact on the shallow acceptor states related EL process than on the one related to the deep acceptor states in p-type GaN films. This study has great significance on the practical applications of GaN in optoelectronic devices under a working environment where mechanical deformation is unavoidable such as for flexible/printable light emitting diodes.

  8. Light emitting ceramic device and method for fabricating the same

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  9. Green electroluminescence from Tb{sub 4}O{sub 7} films on silicon: Impact excitation of Tb{sup 3+} ions by hot carriers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhu, Chen; Jiang, Miaomiao; Zhou, Junwei

    2016-02-01

    We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb{sup 3+}) ions inherent in a Tb{sub 4}O{sub 7} film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n{sup +}-Si or p{sup +}-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb{sup 3+} ions by the hot electrons (holes), which stem from the electric-fieldmore » acceleration of the electrons (holes) injected from the n{sup +}-Si (p{sup +}-Si) substrate via the trap-assisted tunneling mechanism.« less

  10. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

    PubMed

    Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

    2013-07-15

    n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

  11. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, Nosoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-06-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

  12. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes.

    PubMed

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-06-11

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

  13. Low injection losses in InGaN/GaN LEDs: The correlation of photoluminescence, electroluminescence, and photocurrent measurements

    NASA Astrophysics Data System (ADS)

    Quitsch, Wolf-Alexander; Sager, Daniel; Loewenich, Moritz; Meyer, Tobias; Hahn, Berthold; Bacher, Gerd

    2018-06-01

    Time-resolved photoluminescence spectroscopy and photocurrent measurements at quasi-resonant laser excitation are combined with electroluminescence studies to get access to low injection losses in high power InGaN/GaN LEDs. A direct relation between electroluminescence and photoluminescence efficiencies with photocurrent is found, indicating that tunneling losses play a key role in the low injection regime. This assertion is confirmed by comparing photoluminescence efficiencies under open and closed circuit conditions. Experiments under various excitation wavelengths hint at the role of resonant tunneling processes in the efficiency losses.

  14. Efficient Carrier-to-Exciton Conversion in Field Emission Tunnel Diodes Based on MIS-Type van der Waals Heterostack.

    PubMed

    Wang, Shunfeng; Wang, Junyong; Zhao, Weijie; Giustiniano, Francesco; Chu, Leiqiang; Verzhbitskiy, Ivan; Zhou Yong, Justin; Eda, Goki

    2017-08-09

    We report on efficient carrier-to-exciton conversion and planar electroluminescence from tunnel diodes based on a metal-insulator-semiconductor (MIS) van der Waals heterostack consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS 2 ). These devices exhibit excitonic electroluminescence with extremely low threshold current density of a few pA·μm -2 , which is several orders of magnitude lower compared to the previously reported values for the best planar EL devices. Using a reference dye, we estimate the EL quantum efficiency to be ∼1% at low current density limit, which is of the same order of magnitude as photoluminescence quantum yield at the equivalent excitation rate. Our observations reveal that the efficiency of our devices is not limited by carrier-to-exciton conversion efficiency but by the inherent exciton-to-photon yield of the material. The device characteristics indicate that the light emission is triggered by injection of hot minority carriers (holes) to n-doped WS 2 by Fowler-Nordheim tunneling and that hBN serves as an efficient hole-transport and electron-blocking layer. Our findings offer insight into the intelligent design of van der Waals heterostructures and avenues for realizing efficient excitonic devices.

  15. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Tondini, S.; Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena; Pucker, G.

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minoritymore » carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.« less

  16. Study of electron mobility in small molecular SAlq by transient electroluminescence method

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

    2007-12-01

    The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

  17. Analysis of electroluminescence images in small-area circular CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

    2013-09-01

    The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

  18. Pure white OLED based on an organic small molecule: 2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine

    NASA Astrophysics Data System (ADS)

    Liu, Jian

    2015-10-01

    2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine (DBIP) was synthesized. The single-crystal structure of DBIP was resolved. DBIP-based OLED was fabricated. The electroluminescence for the device corresponds to a pure white emission. In addition, thermal stability, UV-vis, photoluminescence and electrochemical behaviors of DBIP were investigated as well.

  19. Electroluminescence in CdSe/PVA nanocomposites

    NASA Astrophysics Data System (ADS)

    Kumari, Sarita; Ramrakhiani, M.; Khare, P. K.

    2018-05-01

    The synthesis of II-VI nanocrystal into the polymer matrix to form nanocomposites with adjustable nanocrystal is of great interest size is a big challenge to the scientific community. In present work semiconducting CdSe/PVA thin film were synthesized by single step solution method with different concentration of CdSe. The as-prepared products were characterized by UV-Visible absorption spectra and FESEM. Absorption spectra of CdSe/PVA nanocomposites indicated that the position of absorption edge shifts to smaller wavelength by increasing the concentration of CdSe. For Electroluminescence a turn on voltage is required for light emission and brightness increases with voltage. Turn on voltage is found to decrease as CdSe concentration is increased. The voltage-current curve represents ohmic nature for all EL cells.

  20. Strong electroluminescence from SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} mixed layers fabricated by atomic layer deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rebohle, L., E-mail: l.rebohle@hzdr.de; Braun, M.; Wutzler, R.

    2014-06-23

    We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15% of SiO{sub 2}-Tb{sub 2}O{sub 3}-mixed layers fabricated by atomic layer deposition and partly co-doped with Al{sub 2}O{sub 3}. The electrical, EL, and breakdown behavior is investigated as a function of the Tb and the Al concentration. Special attention has been paid to the beneficial role of Al{sub 2}O{sub 3} co-doping which improves important device parameters. In detail, it increases the maximum EL power efficiency and EL decay time, it nearly doubles the fraction of excitable Tb{sup 3+} ions, it shifts the region of high EL powermore » efficiencies to higher injection currents, and it reduces the EL quenching over the device lifetime by an approximate factor of two. It is assumed that the presence of Al{sub 2}O{sub 3} interferes the formation of Tb clusters and related defects. Therefore, the system SiO{sub 2}-Tb{sub 2}O{sub 3}-Al{sub 2}O{sub 3} represents a promising alternative for integrated, Si-based light emitters.« less

  1. Kinetics of transient electroluminescence in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  2. Pentacene Derivatives as Red Emitters in Organic Light Emitting Devices.

    DTIC Science & Technology

    1999-12-16

    20000223 076 1 2 3 4 5 6 12 13 Docket No.:N.C. 79 914 ^-^ V^ U (J Inventor’s Name: Us, Cnsafuln Picolo, ffideyuki Murata, Zakya H.™" ^^^ PENTACENE ...materials doped 10 with pentacene derivatives. 11 2. Description of the Related Art Organic electroluminescent devices have been the subject of...wavelengths. Summary of the Invention It has now been discovered that pentacene derivatives exhibit very narrow emission spectra and produce a very pure

  3. Silver nanoparticles with 4,4‧-dicyanamidobiphenyl ligand: Synthesis, photoluminescent and electroluminescent properties and DFT calculations

    NASA Astrophysics Data System (ADS)

    Chiniforoshan, Hossein; Khalesi, Sara Bahmanpour; Tabrizi, Leila; Hajipour, Abdol R.; Chermahini, Alireza Najafi; Karimzadeh, Morteza

    2015-02-01

    In this research, a new complex of 4,4‧-dicyanamidobiphenyl (bpH2) ligand, Ag(bpH) has been synthesized and characterized by FT-IR, UV-Vis spectroscopies, and elemental analysis. The morphology and size of complex were determined by the scanning electron microscopy (SEM) image. The diameter of the complex was about 61 nm and the nanoparticles were spherical. TGA result indicated that this complex was thermally stable. Also, photoluminescent and electroluminescent properties of Ag(bpH) were reported. The blue-green light emission was observed by fabricating double-layer devices using Ag(bpH) as electron-transport and NPB as hole-transport material. In addition, this complex was optimized by B3LYP/LANL2DZ method. The calculated FT-IR and UV-Vis data are in better agreement with the experimental results. In addition to DFT calculations, natural bond orbital (NBO) was also performed at the same level of theory.

  4. Photoemission-based microelectronic devices

    PubMed Central

    Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

    2016-01-01

    The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

  5. Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

    NASA Astrophysics Data System (ADS)

    Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

    2004-11-01

    The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

  6. Pure white OLED based on an organic small molecule: 2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine.

    PubMed

    Liu, Jian

    2015-10-05

    2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine (DBIP) was synthesized. The single-crystal structure of DBIP was resolved. DBIP-based OLED was fabricated. The electroluminescence for the device corresponds to a pure white emission. In addition, thermal stability, UV-vis, photoluminescence and electrochemical behaviors of DBIP were investigated as well. Copyright © 2015 Elsevier B.V. All rights reserved.

  7. Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

    NASA Astrophysics Data System (ADS)

    Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

    2016-12-01

    We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission.

  8. Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

    We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

  9. Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

    DOE PAGES

    Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

    2016-12-12

    We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

  10. Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

    2015-05-25

    We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

  11. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  12. Red electroluminescence and photoluminescence properties of new porphyrin compounds

    NASA Astrophysics Data System (ADS)

    Zhang, X. H.; Xie, Z. Y.; Wu, F. P.; Zhou, L. L.; Wong, O. Y.; Lee, C. S.; Kwong, H. L.; Lee, S. T.; Wu, S. K.

    2003-12-01

    Three new porphyrin compounds with saturated red emission were synthesized and their photoluminescence and electroluminescence were studied. The emission of the new dopants peaked at about 635-655 nm and the half-width of the emission peaks was very narrow (below 30 nm). Of the three porphyrin compounds, the one (TBDPP) with the smallest conjugation system had the highest fluorescent quantum yield of 21% in solution. Organic light-emitting diodes using TBDPP as a dopant showed saturated red emission (CIE coordinates of x=0.69, y=0.29) with a luminance of 150 cd/m 2 at a driving voltage of 22 V.

  13. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (<100 meV), and thus allows RISC at ambient temperature. We found that the EL emission in OLED based on the exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  14. Poly[(arylene ethynylene)-alt-(arylene vinylene)]s Based on Anthanthrone and Its Derivatives: Synthesis and Photophysical, Electrochemical, Electroluminescent, and Photovoltaic Properties

    PubMed Central

    2017-01-01

    Anthanthrone and its derivatives are large polycyclic aromatic compounds (PACs) that pose a number of challenges for incorporation into the structure of soluble conjugated polymers. For the first time, this group of PACs was employed as the building blocks for the synthesis of copolymers (P1–P5) based on poly[(arylene ethynylene)-alt-(arylene vinylene)]s backbone (−Ph–C≡C–Anth–C≡C–Ph–CH=CH–Ph–CH=CH−)n. During the synthesis of P1–P5, different alkyloxy side chains were incorporated in order to tune the properties of the polymers. Of the copolymer series only P1 (containing anthanthrone and branched 2-ethylhexyloxy side chains on phenylenes), P2 and P3 (for which the anthanthrones containing carbonyl groups were converted to anthanthrene containing alkyloxy substituents) were soluble. The photophysical, electrochemical, electroluminescent and photovoltaic properties of P1–P3 are reported, compared and discussed with respect to the effects of side chains. PMID:29151617

  15. Molding resonant energy transfer by colloidal crystal: Dexter transfer and electroluminescence

    NASA Astrophysics Data System (ADS)

    González-Urbina, Luis; Kolaric, Branko; Libaers, Wim; Clays, Koen

    2010-05-01

    Building photonic crystals by combination of colloidal ordering and metal sputtering we were able to construct a system sensitive to an electrical field. In corresponding crystals we embedded the Dexter pair (Ir(ppy3) and BAlq) and investigated the influence of the band gap on the resonant energy transfer when the system is excited by light and by an electric field respectively. Our investigations extend applications of photonic crystals into the field of electroluminescence and LED technologies.

  16. Conductive polymer-based material

    DOEpatents

    McDonald, William F [Utica, OH; Koren, Amy B [Lansing, MI; Dourado, Sunil K [Ann Arbor, MI; Dulebohn, Joel I [Lansing, MI; Hanchar, Robert J [Charlotte, MI

    2007-04-17

    Disclosed are polymer-based coatings and materials comprising (i) a polymeric composition including a polymer having side chains along a backbone forming the polymer, at least two of the side chains being substituted with a heteroatom selected from oxygen, nitrogen, sulfur, and phosphorus and combinations thereof; and (ii) a plurality of metal species distributed within the polymer. At least a portion of the heteroatoms may form part of a chelation complex with some or all of the metal species. In many embodiments, the metal species are present in a sufficient concentration to provide a conductive material, e.g., as a conductive coating on a substrate. The conductive materials may be useful as the thin film conducting or semi-conducting layers in organic electronic devices such as organic electroluminescent devices and organic thin film transistors.

  17. Green-Yellow Electroluminescence from a host-dopant blended system as the active layer in a bilayer polymer light emitting diode: Poly(n-vinyl carbazole) as the host and a new soluble thiophene based copolymer [poly(2,2‧-BT)-co-(3-DDT)] as the dopant

    NASA Astrophysics Data System (ADS)

    Shahalizad, Afshin; Ahmadi-Kandjani, Sohrab; Movla, Hossein; Omidi, Hafez; Massoumi, Bakhshali; Zakerhamidi, Mohammad Sadegh; Entezami, Ali Akbar

    2014-11-01

    A new type of bilayer Polymer Light Emitting Diode (PLED) which emits green-yellow light is reported. In this PLED, a novel thiophene-based copolymer [poly(2,2‧-BT)-co-(3-DDT)] with an excellent electron transporting property has been doped in hole transporting and electron blocking poly(n-vinylcarbazole) (PVK). Formation of type-II heterojunctions among nm-size features in PVK:poly(2,2‧-BT)-co-(3-DDT) blended system makes exciplex and electroplex emissions would be dominant in the Electroluminescence (EL) spectrum of the device. These cross recombinations between electrons in the LUMO of poly(2,2‧-BT)-co-(3-DDT) and holes in the HOMO of PVK is a reason for the low driving voltage of the PLED because there is no need for the charge carriers to hop or tunnel to the adjacent polymer. Morphological investigations demonstrate that the mixing degree between the components is high, favoring formation of exciplexes and electroplexes at the interface of the components.

  18. Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

    PubMed Central

    2015-01-01

    The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p–n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurements of the vertically staked WSe2/MoS2 heterojunctions reveal excellent current rectification behavior with an ideality factor of 1.2. Photocurrent mapping shows rapid photoresponse over the entire overlapping region with a highest external quantum efficiency up to 12%. Electroluminescence studies show prominent band edge excitonic emission and strikingly enhanced hot-electron luminescence. A systematic investigation shows distinct layer-number dependent emission characteristics and reveals important insight about the origin of hot-electron luminescence and the nature of electron–orbital interaction in TMDs. We believe that these atomically thin heterojunction p–n diodes represent an interesting system for probing the fundamental electro-optical properties in TMDs and can open up a new pathway to novel optoelectronic devices such as atomically thin photodetectors, photovoltaics, as well as spin- and valley-polarized light emitting diodes, on-chip lasers. PMID:25157588

  19. Electroluminescence Caused by the Transport of Interacting Electrons through Parallel Quantum Dots in a Photon Cavity

    NASA Astrophysics Data System (ADS)

    Gudmundsson, Vidar; Abdulla, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei

    2018-02-01

    We show that a Rabi-splitting of the states of strongly interacting electrons in parallel quantum dots embedded in a short quantum wire placed in a photon cavity can be produced by either the para- or the dia-magnetic electron-photon interactions when the geometry of the system is properly accounted for and the photon field is tuned close to a resonance with the electron system. We use these two resonances to explore the electroluminescence caused by the transport of electrons through the one- and two-electron ground states of the system and their corresponding conventional and vacuum electroluminescense as the central system is opened up by coupling it to external leads acting as electron reservoirs. Our analysis indicates that high-order electron-photon processes are necessary to adequately construct the cavity-photon dressed electron states needed to describe both types of electroluminescence.

  20. Room temperature electroluminescence from n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction device grown by PLD

    NASA Astrophysics Data System (ADS)

    Zhang, Lichun; Li, Qingshan; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

    2014-05-01

    The n-ZnO:Ga/ p-GaN:Mg and n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/ p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.

  1. High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

    NASA Astrophysics Data System (ADS)

    Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

  2. Synthesis, characterization and electroluminescence of two highly-twisted non-doped blue light-emitting materials

    NASA Astrophysics Data System (ADS)

    Gong, Xiaojie; Pan, Yipeng; Xie, Xiang; Tong, Tong; Chen, Runfeng; Gao, Deqing

    2018-04-01

    Two pyrene derivatives, substituted with 2-methylnaphthalene units on 1,3-position and 1,6-position of pyrene backbones, were designed and synthesized. DFT calculation confirmed that the two molecules were highly twisted and the dihedral angles between pyrene backbone and naphthalene unit were over 80°, being attributed to the steric hindrance of ortho-methyl group and the substitution position of pyrene itself. As a result, the intermolecular aggregation was greatly inhibited in the solid state, being beneficial for suppressing the fluorescence quenching. By analyzing the optical and thermal properties, it was found that the π-π conjugation extension could be adjusted and a balance for high fluorescent efficiency and avoiding quenching at the same time could be reached, which may guide the molecular design in the future. The electroluminescence properties of the non-doped devices were enhanced with the double hole-transporting layers by optimizing the energy level matching. The stable blue EL emission, with the Commission Internationaled'Eclairage (CIEx,y) color coordinates of (0.15, 0.13) and (0.15, 0.11) at 7, 8, 9 and 10 V respectively, was obtained.

  3. A spectrally tunable all-graphene-based flexible field-effect light-emitting device

    PubMed Central

    Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

    2015-01-01

    The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (∼450 nm) to red (∼750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole–Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays. PMID:26178323

  4. A spectrally tunable all-graphene-based flexible field-effect light-emitting device

    NASA Astrophysics Data System (ADS)

    Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

    2015-07-01

    The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (~450 nm) to red (~750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole-Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

  5. Paper-based CRP Monitoring Devices

    NASA Astrophysics Data System (ADS)

    Lin, Shang-Chi; Tseng, Chung-Yuh; Lai, Po-Liang; Hsu, Min-Yen; Chu, Shueh-Yao; Tseng, Fan-Gang; Cheng, Chao-Min

    2016-12-01

    Here, we discuss the development of a paper-based diagnostic device that is inexpensive, portable, easy-to-use, robust, and capable of running simultaneous tests to monitor a relevant inflammatory protein for clinical diagnoses i.e. C-reactive protein (CRP). In this study, we first attempted to make a paper-based diagnostic device via the wax printing method, a process that was used in previous studies. This device has two distinct advantages: 1) reduced manufacturing and assay costs and operation duration via using wax printing method to define hydrophobic boundaries (for fluidic devices or general POC devices); and, 2) the hydrophilicity of filter paper, which is used to purify and chromatographically correct interference caused by whole blood components with a tiny amount of blood sample (only 5 μL). Diagnosis was based on serum stain length retained inside the paper channels of our device. This is a balanced function between surface tension and chromatographic force following immune reactions (CRP assays) with a paper-embedded biomarker.

  6. White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

    PubMed Central

    2010-01-01

    We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour. PMID:20672120

  7. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Brazzini, Tommaso, E-mail: tommaso.brazzini@bristol.ac.uk; Sun, Huarui; Uren, Michael J.

    2015-05-25

    Hot electrons in AlGaN/GaN high electron mobility transistors are studied during radio frequency (RF) and DC operation by means of electroluminescence (EL) microscopy and spectroscopy. The measured EL intensity is decreased under RF operation compared to DC at the same average current, indicating a lower hot electron density. This is explained by averaging the DC EL intensity over the measured load line used in RF measurements, giving reasonable agreement. In addition, the hot electron temperature is lower by up to 15% under RF compared to DC, again at least partially explainable by the weighted averaging along the specific load line.more » However, peak electron temperature under RF occurs at high V{sub DS} and low I{sub DS} where EL is insignificant suggesting that any wear-out differences between RF and DC stress of the devices will depend on the balance between hot-carrier and field driven degradation mechanisms.« less

  8. Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pomeroy, J. W., E-mail: James.Pomeroy@Bristol.ac.uk; Kuball, M.

    2015-10-14

    Solid immersion lenses (SILs) are shown to greatly enhance optical spatial resolution when measuring AlGaN/GaN High Electron Mobility Transistors (HEMTs), taking advantage of the high refractive index of the SiC substrates commonly used for these devices. Solid immersion lenses can be applied to techniques such as electroluminescence emission microscopy and Raman thermography, aiding the development device physics models. Focused ion beam milling is used to fabricate solid immersion lenses in SiC substrates with a numerical aperture of 1.3. A lateral spatial resolution of 300 nm is demonstrated at an emission wavelength of 700 nm, and an axial spatial resolution of 1.7 ± 0.3 μm atmore » a laser wavelength of 532 nm is demonstrated; this is an improvement of 2.5× and 5×, respectively, when compared with a conventional 0.5 numerical aperture objective lens without a SIL. These results highlight the benefit of applying the solid immersion lenses technique to the optical characterization of GaN HEMTs. Further improvements may be gained through aberration compensation and increasing the SIL numerical aperture.« less

  9. D-A-D-type orange-light emitting thermally activated delayed fluorescence (TADF) materials based on a fluorenone unit: simulation, photoluminescence and electroluminescence studies.

    PubMed

    Gan, Lin; Li, Xianglong; Cai, Xinyi; Liu, Kunkun; Li, Wei; Su, Shi-Jian

    2018-01-01

    The design of orange-light emitting, thermally activated, delayed fluorescence (TADF) materials is necessary and important for the development and application of organic light-emitting diodes (OLEDs). Herein, two donor-acceptor-donor (D-A-D)-type orange TADF materials based on fluorenone and acridine, namely 2,7-bis(9,9-dimethylacridin-10(9 H )-yl)-9 H -fluoren-9-one (27DACRFT, 1 ) and 3,6-bis(9,9-dimethylacridin-10(9 H )-yl)-9 H -fluoren-9-one (36DACRFT, 2 ), were successfully synthetized and characterized. The studies on their structure-property relationship show that the different configurations have a serious effect on the photoluminescence and electroluminescence performance according to the change in singlet-triplet splitting energy (Δ E ST ) and excited state geometry. This indicates that a better configuration design can reduce internal conversion and improve triplet exciton utilization of TADF materials. Importantly, OLEDs based on 2 exhibited a maximum external quantum efficiency of 8.9%, which is higher than the theoretical efficiency of the OLEDs based on conventional fluorescent materials.

  10. D–A–D-type orange-light emitting thermally activated delayed fluorescence (TADF) materials based on a fluorenone unit: simulation, photoluminescence and electroluminescence studies

    PubMed Central

    Gan, Lin; Li, Xianglong; Cai, Xinyi; Liu, Kunkun; Li, Wei

    2018-01-01

    The design of orange-light emitting, thermally activated, delayed fluorescence (TADF) materials is necessary and important for the development and application of organic light-emitting diodes (OLEDs). Herein, two donor–acceptor–donor (D–A–D)-type orange TADF materials based on fluorenone and acridine, namely 2,7-bis(9,9-dimethylacridin-10(9H)-yl)-9H-fluoren-9-one (27DACRFT, 1) and 3,6-bis(9,9-dimethylacridin-10(9H)-yl)-9H-fluoren-9-one (36DACRFT, 2), were successfully synthetized and characterized. The studies on their structure–property relationship show that the different configurations have a serious effect on the photoluminescence and electroluminescence performance according to the change in singlet–triplet splitting energy (ΔE ST) and excited state geometry. This indicates that a better configuration design can reduce internal conversion and improve triplet exciton utilization of TADF materials. Importantly, OLEDs based on 2 exhibited a maximum external quantum efficiency of 8.9%, which is higher than the theoretical efficiency of the OLEDs based on conventional fluorescent materials. PMID:29623130

  11. Temperature dependence of tris(2,2'-bipyridine) ruthenium (II) device characteristics

    NASA Astrophysics Data System (ADS)

    Slinker, Jason D.; Malliaras, George G.; Flores-Torres, Samuel; Abruña, Héctor D.; Chunwachirasiri, Withoon; Winokur, Michael J.

    2004-04-01

    We have investigated the temperature dependence of the current, radiance, and efficiency from electroluminescent devices based on [Ru(bpy)3]2+(PF6-)2, where bpy is 2,2'-bipyridine. We find that the current increases monotonically with temperature from 200 to 380 K, while the radiance reaches a maximum near room temperature. For temperatures greater than room temperature, an irreversible, current-induced degradation occurs with thermal cycling that diminishes both the radiance and the photoluminescence (PL) quantum yield, but does not affect the current. The temperature dependence of the external quantum efficiency is fully accounted for by the dependence of the PL quantum yield as measured from the emissive area of the device. This implies that the contacts remain ohmic throughout the temperature range investigated. The quenching of the PL with temperature was attributed to thermal activation to a nonradiative d-d transition. The temperature dependence of the current shows a complex behavior in which transport appears to be thermally activated, with distinct low-temperature and high-temperature regimes.

  12. Contactless Electroluminescence Imaging for Cell and Module Characterization

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Johnston, Steve

    2015-06-14

    Module performance can be characterized by imaging using baseline and periodic images to track defects and degradation. Both thermal images, which can be acquired during sunny operating conditions, and photoluminescence images, which could be acquired at night, can be collected without electrical connection. Electroluminescence (EL) images, which are useful to detect many types of defects such as cracks, interconnect and solder faults, and resistances, have typically required electrical connection to drive current in the cells and modules. Here, a contactless EL imaging technique is proposed, which provides an EL image without the need for electrical connection to drive current throughmore » the module. Such EL imaging has the capability to be collected at night without disruption to daytime power generation.« less

  13. Excellent deep-blue emitting materials based on anthracene derivatives for non-doped organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, Zhiqiang; Liu, Wei; Xu, Chen; Ji, Baoming; Zheng, Caijun; Zhang, Xiaohong

    2016-08-01

    Two deep-blue emitting materials 2-tert-butyl-9,10-bis(3,5-diphenylphenyl)anthracene (An-1) and 2-tert-butyl-9,10-bis(3,5-diphenylbiphenyl-4‧-yl)anthracene (An-2) were successfully synthesized by the Pd-catalyzed Suzuki coupling reaction. Both of these compounds have high thermal stabilities and show strong deep-blue emission as solid-state film as well as in n-hexane solution. Two non-doped electroluminescent devices employing An-1 and An-2 as emitting layers were fabricated by vacuum vapor deposition. These devices exhibited highly efficient and stable deep-blue emission with high color purity. The CIE coordinate and maximum EQE of An-1 based device are 4.2% and (0.16, 0.06), respectively. Device based on An-2 achieved a maximum EQE of 4.0% and a CIE coordinate of (0.16, 0.10).

  14. Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.

    PubMed

    Tetsuyama, Norihiro; Fusazaki, Koshi; Mizokami, Yasuaki; Shimogaki, Tetsuya; Higashihata, Mitsuhiro; Nakamura, Daisuke; Okada, Tatsuo

    2014-04-21

    We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

  15. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  16. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    NASA Astrophysics Data System (ADS)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  17. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    NASA Technical Reports Server (NTRS)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  18. RF sputter deposition of SrS:Eu and ZnS:Mn thin film electroluminescent phosphors

    NASA Astrophysics Data System (ADS)

    Droes, Steven Roy

    1998-09-01

    The radio-frequency (rf) sputter deposition of thin film electroluminescent (TFEL) materials was studied. Thin films of strontium sulfide doped with europium (SrS:Eu) and zinc sulfide doped with manganese (ZnS:Mn) were RF sputter deposited at different conditions. Photoluminescent and electroluminescent behaviors of these films were examined. Photoluminescent active, crystalline films of SrS:Eu were deposited at temperatures from 300o C to 650o C. The best temperature was 400o C, where a PL efficiency of 35% was achieved. Films were deposited at two power levels (90 and 120 watts) and five H2S concentrations (0.6%, 1.3%, 2.4%, 4.0% and 5.3%). The H2S concentration affected the crystallinity of the films and the PL performance. Lower H2S concentrations resulted in films with smaller crystallite sizes and poorer PL performance. Increased H2S concentrations increased the PL intensity and the overall spectra resembled that of an efficient SrS:Eu powder. Although there was a correlation between crystallinity and PL performance other factors such as europium concentration, distribution, and local environment also influence PL performance. Analytical results suggested that, although a film may be crystalline and have the correct europium concentration, unless the europium is in the correct localized environment, optimum PL response will not be achieved. Increased H2S concentrations produced films with europium located in optimum locations. Contrary to vacuum or chemical vapor deposited films, the sputter deposited films showed no trailing edge emission during electroluminescence. A suggested reason for this lack of a trailing edge emission in these films is that the sputter deposition process produces phosphor- insulator interfaces without shallow trap states. A statistical design of experiments approach was implemented for the sputter deposition of ZnS:Mn. The effects of four factors (substrate temperature, chamber pressure, power to the target, and H2S concentration) on

  19. Photovoltaic reciprocity and quasi-Fermi level splitting in nanostructure-based solar cells (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Aeberhard, Urs

    2017-04-01

    The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions [1]. So far, the theory has been verified for a wide range of devices and material systems and forms the basis of a growing number of luminesecence imaging techniques used in the characterization of photovoltaic materials, cells and modules [2-5]. However, there are also some examples where the theory fails, such as in the case of amorphous silicon. In our contribution, we critically assess the assumptions made in the derivation of the theory and compare its predictions with rigorous formal relations as well as numerical computations in the framework of a comprehensive quantum-kinetic theory of photovoltaics [6] as applied to ultra-thin absorber architectures [7]. One of the main applications of the photovoltaic reciprocity relation is the determination of quasi-Fermi level splittings (QFLS) in solar cells from the measurement of luminescence. In nanostructure-based photovoltaic architectures, the determination of QFLS is challenging, but instrumental to assess the performance potential of the concepts. Here, we use our quasi-Fermi level-free theory to investigate existence and size of QFLS in quantum well and quantum dot solar cells. [1] Uwe Rau. Reciprocity relation between photovoltaic quantum efficiency and electrolumines- cent emission of solar cells. Phys. Rev. B, 76(8):085303, 2007. [2] Thomas Kirchartz and Uwe Rau. Electroluminescence analysis of high efficiency cu(in,ga)se2 solar cells. J. Appl. Phys., 102(10), 2007. [3] Thomas Kirchartz, Uwe Rau, Martin Hermle, Andreas W. Bett, Anke Helbig, and Jrgen H. Werner. Internal voltages in GaInP-GaInAs-Ge multijunction solar cells determined by electro- luminescence measurements. Appl. Phys. Lett., 92(12), 2008. [4] Thomas Kirchartz, Anke Helbig, Wilfried Reetz, Michael Reuter, Jürgen H. Werner, and

  20. Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device

    NASA Astrophysics Data System (ADS)

    Chikamatsu, Masayuki; Ichino, Yoshiro; Takada, Noriyuki; Yoshida, Manabu; Kamata, Toshihide; Yase, Kiyoshi

    2002-07-01

    A photoresponsive organic light-emitting device combining blue-emitting organic electroluminescent (EL) diode with titanyl phthalocyanine as a near-infrared (IR) sensitive layer was fabricated. By irradiating near-IR light to the device, blue emission occurred in the lower drive voltage (between 5 and 12 V). The result indicates that the device acts as a light switch and/or an up-converter from near-IR light (1.6 eV) to blue (2.6 eV). The EL response times of rise and decay using a near-IR light trigger were 260 and 330 mus, respectively. At a higher voltage (above 12 V), enhancement of blue emission was observed with near-IR light irradiation. The ON/OFF ratio reached a maximum of 103.

  1. Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices

    NASA Technical Reports Server (NTRS)

    Kim, Jong Dae (Inventor); Nagarajaiah, Satish (Inventor); Barrera, Enrique V. (Inventor); Dharap, Prasad (Inventor); Zhiling, Li (Inventor)

    2010-01-01

    The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.

  2. Manufacturing Methods and Engineering for TFT Addressed Display.

    DTIC Science & Technology

    1980-02-20

    type required for the Army’s DMD (Digital Message Device), based on an active-matrix addressed electroluminescent display previously developed by...electroluminescent phosphor as the light emitter, and finally packaging or encapsulation. Because of size limitations of the pilot manufacturing facility, the DMD ...display was designed as two identical halves, which were then to be made individually in the auto- mated machine and later assembled into a single DMD

  3. Photo- and electroluminescence of sulfide and silicate phosphors embedded in synthetic opal

    NASA Astrophysics Data System (ADS)

    Kaplan, S. F.; Kartenko, N. F.; Kurdyukov, D. A.; Medvedev, A. V.; Badalyan, A. G.; Golubev, V. G.

    2007-02-01

    The sulfide (ZnS:Mn, Zn xCd 1 -xS:Mn, Zn xCd 1- xS:Ag) and silicate (Zn 2SiO 4:Mn) phosphors were synthesized directly inside the pores of synthetic opal by chemical bath deposition. These composites are perfect three-dimensional photonic crystals, which produce effective photo- and electroluminescence at room temperature. The emission spectra are considerably modified by the photonic crystal structure to become anisotropic in accordance with the photonic band gap angular dispersion.

  4. 1000 X Difference Between Current Displays and Capability of Human Visual System: Payoff Potential for Affordable Defense Systems

    DTIC Science & Technology

    2000-01-01

    second tier technologies: digital micromirror devices (DMD); alternating current gas plasma (ACGP); inorganic electroluminescent (EL, TFEL, AMEL... Micromirror Device (DMD) - Alternating Current Gas Plasma (ACGP) - Electroluminescent (EL, TFEL, AMEL) - Vacuum Fluorescent Display (VFD) - Inorganic Light...Instruments Digital Micromirror Device (DMD) Digital Light Processing technology and another, the Qualcomm/Hughes-JVC CRT/Liquid Crystal Light Valve

  5. [A novel yellow organic light-emitting device].

    PubMed

    Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

    2008-07-01

    The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

  6. Establishing Dual Electrogenerated Chemiluminescence and Multicolor Electrochromism in Functional Ionic Transition-Metal Complexes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Puodziukynaite, Egle; Oberst, Justin L.; Dyer, Aubrey L.

    A combination of electrochromism and electroluminescence in functional materials could lead to single-layer dual electrochromic/electroluminescent (EC/EL) display devices, capable of simultaneous operation in emissive and reflective modes. Whereas such next generation displays could provide optimal visibility in any ambient lighting situation, materials available that exhibit such characteristics in the active layer are limited due to the required intrinsic multifunctionality (i.e., redox activity, electroluminescence, electrochromism, and ion conductivity) and to date can only be achieved via the rational design of ionic transition-metal complexes. Reported herein is the synthesis and characterization of a new family of acrylate-containing ruthenium (tris)bipyridine-based coordination complexes withmore » multifunctional characteristics. Potential use of the presented compounds in EC/EL devices is established, as they are applied as cross-linked electrochromic films and electrochemiluminescent layers in light-emitting electrochemical cell devices. Electrochromic switching of the polymeric networks between yellow, orange, green, brown and transmissive states is demonstrated, and electrochemiluminescent devices based on the complexes synthesized show red-orange to deep red emission with λmax ranging from 680 to 722 nm and luminance up to 135 cd/m². Additionally, a dual EC/EL device prototype is presented where light emission and multicolor electrochromism occur from the same pixel comprised of a single active layer, demonstrating a true combination of these properties in ionic transition-metal complexes.« less

  7. Streamline-based microfluidic device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  8. Electroluminescence of thin-film CdTe solar cells and modules

    NASA Astrophysics Data System (ADS)

    Raguse, John Michael

    Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images

  9. Nanoparticle-Enhanced Silver-Nanowire Plasmonic Electrodes for High-Performance Organic Optoelectronic Devices.

    PubMed

    Kim, Taehyo; Kang, Saewon; Heo, Jungwoo; Cho, Seungse; Kim, Jae Won; Choe, Ayoung; Walker, Bright; Shanker, Ravi; Ko, Hyunhyub; Kim, Jin Young

    2018-05-21

    Improved performance in plasmonic organic solar cells (OSCs) and organic light-emitting diodes (OLEDs) via strong plasmon-coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core-shell silver-silica nanoparticles (Ag@SiO 2 NPs) is demonstrated. NP-enhanced plasmonic AgNW (Ag@SiO 2 NP-AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon-coupling effect caused by decorating core-shell Ag@SiO 2 NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A -1 (at 3.2 V) and a power efficiency of 25.14 lm W -1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO 2 NP-AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high-performance OODs, which can be further explored in various plasmonic and optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Magnetic field effects in hybrid perovskite devices

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Sun, D.; Sheng, C.-X.; Zhai, Y. X.; Mielczarek, K.; Zakhidov, A.; Vardeny, Z. V.

    2015-05-01

    Magnetic field effects have been a successful tool for studying carrier dynamics in organic semiconductors as the weak spin-orbit coupling in these materials gives rise to long spin relaxation times. As the spin-orbit coupling is strong in organic-inorganic hybrid perovskites, which are promising materials for photovoltaic and light-emitting applications, magnetic field effects are expected to be negligible in these optoelectronic devices. We measured significant magneto-photocurrent, magneto-electroluminescence and magneto-photoluminescence responses in hybrid perovskite devices and thin films, where the amplitude and shape are correlated to each other through the electron-hole lifetime, which depends on the perovskite film morphology. We attribute these responses to magnetic-field-induced spin-mixing of the photogenerated electron-hole pairs with different g-factors--the Δg model. We validate this model by measuring large Δg (~ 0.65) using field-induced circularly polarized photoluminescence, and electron-hole pair lifetime using picosecond pump-probe spectroscopy.

  11. 2D Semiconductors for Valley-Polarized LEDs and Photodetectors

    NASA Astrophysics Data System (ADS)

    Yu, Ting

    The recently discovered two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers, have aroused great interest due to the underlying quantum physics and the appealing optoelectronic applications like atomically thin light-emitting diodes (LEDs) and photodetectors. On the one hand, valley-polarized electroluminescence and photocurrent from such monolayers have not caused enough attention but highly demanded as building blocks for the new generation valleytronic applications. On the other hand, most reports on these devices are based on the mechanically exfoliated small samples. Considering real applications, a strategy which could offer mass-product and high compatibility to the current planar processes is greatly demanded. Large-area samples prepared by chemical vapour deposition (CVD) are perfect candidates towards such a goal. Here, we report electrically tunable valley-polarized electroluminescence and the selective spin-valley-coupled photocurrent in optoelectronic devices based on monolayer WS2 and MoS2 grown by CVD, exhibiting large electroluminescence and photocurrent dichroisms of 81% and 60%, respectively. The controllable valley polarization and emission components of the electroluminescence have been realized by varying electrical injection of carriers. For the observed helicity-dependent photocurrent, the circular photogalvanic effect at resonant excitations has been found to take the dominant responsibility.

  12. Study of the electroluminescence of highly stereoregular poly(N-pentenyl-carbazole) for blue and white OLEDs

    NASA Astrophysics Data System (ADS)

    Liguori, R.; Botta, A.; Pragliola, S.; Rubino, A.; Venditto, V.; Velardo, A.; Aprano, S.; Maglione, M. G.; Prontera, C. T.; De Girolamo Del Mauro, A.; Fasolino, T.; Minarini, C.

    2017-06-01

    The electroluminescence (EL) of isotactic and syndiotactic poly(N-pentenyl-carbazole) (PPK), achieved by coordination polymerization, is studied in order to investigate the interrelation between the polymer tacticity and their physical-chemical properties. The use of these polymers in organic light-emitting diode (OLED) fabrication is also explored. Thermal and x-ray diffraction analyses of PPKs show that the isotactic stereoisomer is semicrystalline, whereas the syndiotactic one is amorphous. Optical analysis of both stereoisomers, carried out on film samples, reveals the presence of two different excimers: ‘sandwich-like’ and ‘partially overlapping’. Nevertheless, the emission intensity ratio between ‘sandwich-like’ and ‘partially overlapping’ excimers is higher in the isotactic than in the syndiotactic stereoisomer. Using the synthesized polymers as OLED emitting layers, the influence of the polymer tacticity on the EL properties of the device is highlighted. In detail, while blue OLEDs are obtained by using the syndiotactic stereoisomer, OLEDs with a multilayer structure fabricated with the isotactic stereoisomer emit white light. The contribution of three different emissions (fluorescence, phosphorescence and electromer emissions) with comparable intensities to the detected white light is discussed.

  13. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Y.; Li, X.; Xu, P.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

  14. Red Light Emitting Schottky Diodes on p-TYPE GaN/AlN/Si(111) Substrate

    NASA Astrophysics Data System (ADS)

    Chuah, L. S.; Hassan, Z.; Abu Hassan, H.

    High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4-5) × 1020 cm-3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current-voltage (I-V) system, the heights of barriers determined from the I-V measurements were found to be related to the electroluminescence.

  15. Aromatically C6- and C9-Substituted Phenanthro[9,10-d]imidazole Blue Fluorophores: Structure-Property Relationship and Electroluminescent Application.

    PubMed

    Chen, Wen-Cheng; Yuan, Yi; Xiong, Yuan; Rogach, Andrey L; Tong, Qing-Xiao; Lee, Chun-Sing

    2017-08-09

    In this study, a series of aromatically substituted phenanthro[9,10-d]imidazole (PI) fluorophores at C6 and C9 (no. 6 and 9 carbon atoms) have been synthesized and systematically characterized by theoretical, thermal, photophysical, electrochemical, and electroluminescent (EL) studies. C6 and C9 modifications have positive influences on the thermal properties of the new materials. Theoretical calculations suggest that the C6 and the C9 positions of PI are electronically different. Theoretical and experimental evidences of intramolecular charge transfer (ICT) between two identical moieties attaching to the C6 and the C9 positions are observed. Photophysical properties of the fluorophores are greatly influenced by size and conjugation extent of the substituents as well as linking steric hindrance. It is found that the C6 and C9 positions afford moderate conjugated extension compared to the C2 modification. Moreover, ICT characteristics of the new fluorophores increase as the size of the substituted aromatic group, and are partially influenced by steric hindrance, with the anthracene and the pyrene derivatives having the strongest ICT excited properties. EL performances of the fluorophores were evaluated as host emitters or dopants in organic light-emitting devices (OLEDs). Most of the devices showed significantly improved efficiencies compared to the OLED using the nonmodified emitter. Among all the devices, a 5 wt % TPI-Py doped device exhibited excellent performances with an external quantum efficiency >5% at 1000 cd/m 2 and a deep-blue color index of (0.155, 0.065), which are comparable to the most advanced deep-blue devices. Our study can give useful information for designing C6/C9-modificated PI fluorophores and provide an efficient approach for constructing high-performance deep-blue OLEDs.

  16. 1-dimension nano-material-based flexible device

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong

    2009-11-01

    1D nano-material-based flexible devices has attracted considerable attention owing to the growing need of the high-sensitivity flexible sensor, portable consumer electronics etc.. In this paper, the 1D nano-materials-based flexible device on polyimide substrate was proposed. The bottom-up and top-down combined process were used for constructing the ZnO nanowire and the CNT-based flexible devices. Their electrical characteristics were also investigated. The measurement results demonstrate that the flexible device covered with a layer of Al2O3 has good ohm electrical contact behavior between the nano-material and micro-electrodes. The proposed 1D nano-material-based flexible device shows the application potential in the sensing fields.

  17. 3D Printing of NinjaFlex Filament onto PEDOT:PSS-Coated Textile Fabrics for Electroluminescence Applications

    NASA Astrophysics Data System (ADS)

    Tadesse, Melkie Getnet; Dumitrescu, Delia; Loghin, Carmen; Chen, Yan; Wang, Lichuan; Nierstrasz, Vincent

    2018-03-01

    Electroluminescence (EL) is the property of a semiconductor material pertaining to emitting light in response to an electrical current or a strong electric field. The purpose of this paper is to develop a flexible and lightweight EL device. Thermogravimetric analysis (TGA) was conducted to observe the thermal degradation behavior of NinjaFlex. Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid)—PEDOT:PSS—with ethylene glycol (EG) was coated onto polyester fabric where NinjaFlex was placed onto the coated fabric using three-dimensional (3D) printing and phosphor paste, and BendLay filaments were subsequently coated via 3D printing. Adhesion strength and flexibility of the 3D-printed NinjaFlex on textile fabrics were investigated. The TGA results of the NinjaFlex depict no weight loss up to 150°C and that the NinjaFlex was highly conductive with a surface resistance value of 8.5 ohms/sq.; the coated fabric exhibited a uniform surface appearance as measured and observed by using four-probe measurements and scanning electron microscopy, respectively, at 60% PEDOT:PSS. The results of the adhesion test showed that peel strengths of 4160 N/m and 3840 N/m were recorded for polyester and cotton specimens, respectively. No weight loss was recorded following three washing cycles of NinjaFlex. The bending lengths were increased by only a factor of 0.082 and 0.577 for polyester and cotton samples at 0.1-mm thickness, respectively; this remains sufficiently flexible to be integrated into textiles. The prototype device emitted light with a 12-V alternating current power supply.

  18. Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

    NASA Astrophysics Data System (ADS)

    Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

    2018-05-01

    Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

  19. Light-emitting block copolymers composition, process and use

    DOEpatents

    Ferraris, John P.; Gutierrez, Jose J.

    2006-11-14

    Generally, and in one form, the present invention is a composition of light-emitting block copolymer. In another form, the present invention is a process producing a light-emitting block copolymers that intends polymerizing a first di(halo-methyl) aromatic monomer compound in the presence of an anionic initiator and a base to form a polymer and contacting a second di(halo-methyl) aromatic monomer compound with the polymer to form a homopolymer or block copolymer wherein the block copolymer is a diblock, triblock, or star polymer. In yet another form, the present invention is an electroluminescent device comprising a light-emitting block copolymer, wherein the electroluminescent device is to be used in the manufacturing of optical and electrical devices.

  20. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties.

    PubMed

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj; Deferme, Wim

    2018-02-13

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10-20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

  1. Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Malfavon-Ochoa, Mario

    This dissertation presents new insight into the ability of small molecule passivated NCs to achieve intimate approach distances, despite being well passivated, while developing guiding principles in the area of ligand mediated microstructure control and the resulting macroscopic optical and electronic properties that close packing of high quality NCs enables. NC ligand coverage will be characterized quantitatively through thermogravimetric analysis (TGA), and qualitatively by photoluminescence and electroluminescence, in the case of functional devices; illustrating the importance of practitioner dependent control of ligand coverage through variations in the dispersion precipitation purification procedure. A unique examination of the relative contribution of energy and charge transfer in NC LEDs will demonstrate the ability to achieve charge transfer, at a level competitive with energy transfer, to well passivated NCs at various wt% loading in a polymer matrix. The observation of potential dependent recombination zones within an active layer further suggest novel, NC surface passivation mediated control of blend microstructure during solution processing towards the development of a bi-continuous network. Next, NC self-assembly and resulting microstructure dependent optical and electronic properties will be examined through electroluminescence and high-resolution transmission electron microscopy (TEM) micrographs of functional NC/polymer bulk heterojunction LEDs. The joint characterization of NC optical properties, and self-assembly microstructure provide a deeper understanding of the significant and inseparable effects of minimal changes in NC surface passivation on structure and function, and emphasize the potential to rely on strongly passivating ligands to control physical properties and processing parameters concurrently towards higher efficiency devices via low cost processing. Finally, micro-contact printing of blazed transmission gratings, using stable

  2. Transparent Conductive Ink for Additive Manufacturing

    NASA Technical Reports Server (NTRS)

    Patlan, X. J.; Rolin, T. D.

    2017-01-01

    NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts. Nanotechnology is listed in NASA's Technology Roadmap as a key area to invest for further development.1 This research project focused on using nanotechnology to improve electroluminescent lighting in terms of additive manufacturing and to increase energy efficiency. Specifically, this project's goal was to produce a conductive but transparent printable ink that can be sprayed on any surface for use as one of the electrodes in electroluminescent device design. This innovative work is known as thick film dielectric electroluminescent (TDEL) technology. TDEL devices are used for "backlighting, illumination, and identification due to their tunable color output, scalability, and efficiency" (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). These devices use a 'front-to-back' printing method, where the substrate is the transparent layer, and the dielectric and phosphor are layered on top. This project is a first step in the process of creating a 3D printable 'back-to-front' electroluminescent device. Back-to-front 3D-printed devices are beneficial because they can be printed onto different substrates and embedded in different surfaces, and the substrate is not required to be transparent, all because the light is emitted from the top surface through the transparent conductor. Advances in this area will help further development of printing TDEL devices on an array of different surfaces. Figure 1 demonstrates the layering of the two electrodes that are aligned in a parallel plate capacitor structure (I.K. Small, T.D. Rolin, and A.D. Shields, "3D Printed Electroluminescent Light Panels," NASA Fiscal Year 2017 Center Innovation Fund Proposal, unpublished data, 2017). Voltage is applied across the device, and the subsequent electron excitation results in

  3. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin; Hwang, Sunyong; Kim, Sung Kyu; Kim, Jong Kyu; Jeong, Hu Young; Hong, Young Joon

    2016-09-01

    Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

  4. Establishing Dual Electrogenerated Chemiluminescence and Multi-Color Electrochromism in Functional Ionic Transition Metal Complexes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Puodziukynaite, Egle; Oberst, Justin L.; Dyer, Aubrey L.

    A combination of electrochromism and electroluminescence in functional materials could lead to single-layer dual electrochromic/electroluminescent (EC/EL) display devices, capable of simultaneous operation in emissive and reflective modes. Whereas such next generation displays could provide optimal visibility in any ambient lighting situation, materials available that exhibit such characteristics in the active layer are limited due to the required intrinsic multifunctionality (i.e., redox activity, electroluminescence, electrochromism, and ion conductivity) and to date can only be achieved via the rational design of ionic transition-metal complexes. Reported herein is the synthesis and characterization of a new family of acrylate-containing ruthenium (tris)bipyridine-based coordination complexes withmore » multifunctional characteristics. Potential use of the presented compounds in EC/EL devices is established, as they are applied as cross-linked electrochromic films and electrochemiluminescent layers in light-emitting electrochemical cell devices. Electrochromic switching of the polymeric networks between yellow, orange, green, brown and transmissive states is demonstrated, and electrochemiluminescent devices based on the complexes synthesized show red-orange to deep red emission with λ{sub max} ranging from 680 to 722 nm and luminance up to 135 cd/m{sup 2}. Additionally, a dual EC/EL device prototype is presented where light emission and multicolor electrochromism occur from the same pixel comprised of a single active layer, demonstrating a true combination of these properties in ionic transition-metal complexes.« less

  5. Nonequilibrium transport of charge carriers and transient electroluminescence in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nikitenko, V. R.; von Seggern, H.

    2007-11-01

    An analytic theory of nonequilibrium hopping charge transport in disordered organic materials includes quasiequilibrium (normal) and extremely nonequilibrium (dispersive) regimes as limiting cases at long and short times, respectively. In the intermediate interval of time quasiequilibrium value of mobility is nearly established while the coefficient of field-assisted diffusion continues to increase (quasidispersive regime). Therefore, normalized time dependencies of transient current in time-of-flight (TOF) conditions are practically independent of field strength and sample thickness, in good agreement both with data of TOF experiments for molecularly doped polymers and results of numerical simulations of Gaussian disorder model. An analytic model of transient electroluminescence (TEL) is developed on the base of the mentioned theory. Strong asymmetry of mobilities is presumed. In analogy with TOF transients, dispersion parameter of normalized TEL intensity is anomalously large and almost field independent in the quasidispersive regime of transport. The method for determination of mobility from TEL data is proposed.

  6. Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Yue, E-mail: yuelin@fjirsm.ac.cn; Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002; Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian 361005

    2014-01-14

    We perform both spatially resolved electroluminescence (SREL) as a function of injection current and spatially resolved photoluminescence (SRPL) as a function of excitation power on InGaN quantum well blue light-emitting diodes to investigate the underlying physics for the phenomenon of the external quantum efficiency (EQE) droop. SREL allows us to study two most commonly observed but distinctly different droop behaviors on a single device, minimizing the ambiguity trying to compare independently fabricated devices. Two representative devices are studied: one with macroscopic scale material non-uniformity, the other being macroscopically uniform, but both with microscopic scale fluctuations. We suggest that the EQE–currentmore » curve reflects the interplay of three effects: nonradiative recombination through point defects, carrier localization due to either In composition or well width fluctuation, and nonradiative recombination of the extended defects, which is common to various optoelectronic devices. By comparing SREL and SRPL, two very different excitation/detection modes, we show that individual singular sites exhibiting either particularly strong or weak emission in SRPL do not usually play any significant and direct role in the EQE droop. We introduce a two-level model that can capture the basic physical processes that dictate the EQE–current dependence and describe the whole operating range of the device from 0.01 to 100 A/cm{sup 2}.« less

  7. Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices

    NASA Astrophysics Data System (ADS)

    Suja, Mohammad; Debnath, Bishwajit; Bashar, Sunayna B.; Su, Longxing; Lake, Roger; Liu, Jianlin

    2018-05-01

    Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing.

  8. Electroluminescent Properties in Organic Light-Emitting Diode Doped with Two Guest Dyes

    NASA Astrophysics Data System (ADS)

    Mori, Tatsuo; Kim, Hyeong-Gweon; Mizutani, Teruyoshi; Lee, Duck-Chool

    2001-09-01

    An organic light-emitting diode (OLED) with a squarylium dye-doped aluminium quinoline (Alq3) emission layer prepared by vapor deposition method has a pure red emission. However, since its luminance and electroluminescence (EL) efficiency is poor, the authors attended to improve the EL efficiency by doping a photosensitizer dye (a styryl dye, DCM) in an emission layer. The EL efficiency and luminance of DCM- and Sq-doped OLEDs are 2-3 times higher than those of only Sq-doped OLEDs. It was found that the excited energy is transferred from Alq3 to Sq through DCM.

  9. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

    PubMed Central

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

    2018-01-01

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

  10. Long-lived efficient delayed fluorescence organic light-emitting diodes using n-type hosts.

    PubMed

    Cui, Lin-Song; Ruan, Shi-Bin; Bencheikh, Fatima; Nagata, Ryo; Zhang, Lei; Inada, Ko; Nakanotani, Hajime; Liao, Liang-Sheng; Adachi, Chihaya

    2017-12-21

    Organic light-emitting diodes have become a mainstream display technology because of their desirable features. Third-generation electroluminescent devices that emit light through a mechanism called thermally activated delayed fluorescence are currently garnering much attention. However, unsatisfactory device stability is still an unresolved issue in this field. Here we demonstrate that electron-transporting n-type hosts, which typically include an acceptor moiety in their chemical structure, have the intrinsic ability to balance the charge fluxes and broaden the recombination zone in delayed fluorescence organic electroluminescent devices, while at the same time preventing the formation of high-energy excitons. The n-type hosts lengthen the lifetimes of green and blue delayed fluorescence devices by > 30 and 1000 times, respectively. Our results indicate that n-type hosts are suitable to realize stable delayed fluorescence organic electroluminescent devices.

  11. Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer

    NASA Astrophysics Data System (ADS)

    Ikai, Masamichi; Tokito, Shizuo; Sakamoto, Youichi; Suzuki, Toshiyasu; Taga, Yasunori

    2001-07-01

    One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ "starburst" perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4',4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10-20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70-72 lm/W, promising for low-power display devices.

  12. Integration of transmissible organic electronic devices for sensor application

    NASA Astrophysics Data System (ADS)

    Tam, Hoi Lam; Wang, Xizu; Zhu, Furong

    2013-09-01

    A high performance proximity sensor that integrates a front semitransparent organic photodiode (OPD) and an organic light-emitting diode (OLED) is demonstrated. A 0.3-nm-thick plasma-polymerized fluorocarbon film (CFX)-modified thin silver interlayer, serving simultaneously as a semitransparent cathode for the OPD and an anode for OLED, is used to vertically connect the functional organic electronic components. A microcavity OLED is formed between a semitransparent Ag/CFX interlayer and the rear Al cathode enhancing the forward electroluminescence emission in the integrated device. The semitransparent-OPD/OLED stack is designed using an optical admittance analysis method. In the integrated sensor, the front semitransparent OPD component enables a high transmission of light emitted by the integrated OLED unit and a high absorption when light is reflected from objects, thereby to increase the signal/noise ratio. The design and fabrication flexibility of an integrated semitransparent-OPD/OLED device also has cost benefit, making it possible for application in organic proximity sensors.

  13. Value-based purchasing of medical devices.

    PubMed

    Obremskey, William T; Dail, Teresa; Jahangir, A Alex

    2012-04-01

    Health care in the United States is known for its continued innovation and production of new devices and techniques. While the intention of these devices is to improve the delivery and outcome of patient care, they do not always achieve this goal. As new technologies enter the market, hospitals and physicians must determine which of these new devices to incorporate into practice, and it is important these devices bring value to patient care. We provide a model of a physician-engaged process to decrease cost and increase review of physician preference items. We describe the challenges, implementation, and outcomes of cost reduction and product stabilization of a value-based process for purchasing medical devices at a major academic medical center. We implemented a physician-driven committee that standardized and utilized evidence-based, clinically sound, and financially responsible methods for introducing or consolidating new supplies, devices, and technology for patient care. This committee worked with institutional finance and administrative leaders to accomplish its goals. Utilizing this physician-driven committee, we provided access to new products, standardized some products, decreased costs of physician preference items 11% to 26% across service lines, and achieved savings of greater than $8 million per year. The implementation of a facility-based technology assessment committee that critically evaluates new technology can decrease hospital costs on implants and standardize some product lines.

  14. Two-band superlinear electroluminescence in GaSb based nanoheterostructures with AlSb/InAs{sub 1−x} Sb{sub x}/AlSb deep quantum well

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mikhailova, M. P.; Ivanov, E. V.; Danilov, L. V.

    2014-06-14

    We report on superlinear electroluminescent structures based on AlSb/InAs{sub 1−x}Sb{sub x}/AlSb deep quantum wells grown by MOVPE on n-GaSb:Te substrates. Dependence of the electroluminescence (EL) spectra and optical power on the drive current in nanoheterostructures with AlSb/InAs{sub 1−x}Sb{sub x}/AlSb quantum well at 77–300 K temperature range was studied. Intensive two-band superlinear EL in the 0.5–0.8 eV photon energy range was observed. Optical power enhancement with the increasing drive current at room temperature is caused by the contribution of the additional electron-hole pairs due to the impact ionization by the electrons heated at the high energy difference between AlSb and the first electronmore » level E{sub e1} in the InAsSb QW. Study of the EL temperature dependence at 90–300 K range enabled us to define the role of the first and second heavy hole levels in the radiative recombination process. It was shown that with the temperature decrease, the relation between the energies of the valence band offset and the second heavy hole energy level changes due to the temperature transformation of the energy band diagram. That is the reason why the EL spectrum revealed radiative transitions from the first electron level E{sub e1} to the first hole level E{sub h1} in the whole temperature range (90–300 K), while the emission band related with the transitions to the second hole level occurred only at T > 200 K. Comparative examination of the nanostructures with high band offsets and different interface types (AlAs-like and InSb-like) reveals more intense EL and optical power enhancement at room temperature in the case of AlAs-like interface that could be explained by the better quality of the heterointerface and more efficient hole localization.« less

  15. Broadband light sources based on InAs/InGaAs metamorphic quantum dots

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Seravalli, L.; Trevisi, G.; Frigeri, P.

    We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{submore » x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.« less

  16. Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jeong, Junseok; Choi, Ji Eun; Hong, Young Joon, E-mail: yjhong@sejong.ac.kr

    Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunnelingmore » probability determined by wire/film junction geometry and size.« less

  17. Efficient OLEDs Fabricated by Solution Process Based on Carbazole and Thienopyrrolediones Derivatives.

    PubMed

    Lozano-Hernández, Luis-Abraham; Maldonado, José-Luis; Garcias-Morales, Cesar; Espinosa Roa, Arian; Barbosa-García, Oracio; Rodríguez, Mario; Pérez-Gutiérrez, Enrique

    2018-01-30

    Four low molecular weight compounds-three of them new, two of them with carbazole (Cz) as functional group and the other two with thienopyrroledione (TPD) group-were used as emitting materials in organic light emitting diodes (OLEDs). Devices were fabricated with the configuration ITO/PEDOT:PSS/emitting material/LiF/Al. The hole injector layer (HIL) and the emitting sheet were deposited by spin coating; LiF and Al were thermally evaporated. OLEDs based on carbazole derivatives show luminances up to 4130 cd/m², large current efficiencies about 20 cd/A and, cautiously, a very impressive External Quantum Efficiency (EQE) up to 9.5%, with electroluminescence peaks located around 490 nm (greenish blue region). Whereas, devices manufactured with TPD derivatives, present luminance up to 1729 cd/m², current efficiencies about 4.5 cd/A and EQE of 1.5%. These results are very competitive regarding previous reported materials/devices.

  18. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

    NASA Astrophysics Data System (ADS)

    Zhang, Wei

    In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

  19. Highly stretchable electroluminescent skin for optical signaling and tactile sensing.

    PubMed

    Larson, C; Peele, B; Li, S; Robinson, S; Totaro, M; Beccai, L; Mazzolai, B; Shepherd, R

    2016-03-04

    Cephalopods such as octopuses have a combination of a stretchable skin and color-tuning organs to control both posture and color for visual communication and disguise. We present an electroluminescent material that is capable of large uniaxial stretching and surface area changes while actively emitting light. Layers of transparent hydrogel electrodes sandwich a ZnS phosphor-doped dielectric elastomer layer, creating thin rubber sheets that change illuminance and capacitance under deformation. Arrays of individually controllable pixels in thin rubber sheets were fabricated using replica molding and were subjected to stretching, folding, and rolling to demonstrate their use as stretchable displays. These sheets were then integrated into the skin of a soft robot, providing it with dynamic coloration and sensory feedback from external and internal stimuli. Copyright © 2016, American Association for the Advancement of Science.

  20. Degradation Mechanisms in Blue Phosphorescent Organic Light-Emitting Devices by Exciton-Polaron Interactions: Loss in Quantum Yield versus Loss in Charge Balance.

    PubMed

    Zhang, Yingjie; Aziz, Hany

    2017-01-11

    We study the relative importance of deterioration of material quantum yield and charge balance to the electroluminescence stability of PHOLEDs, with a special emphasis on blue devices. Investigations show that the quantum yields of both host and emitter in the emission layer degrade due to exciton-polaron interactions and that the deterioration in material quantum yield plays the primary role in device degradation under operation. On the other hand, the results show that the charge balance factor is also affected by exciton-polaron interactions but only plays a secondary role in determining device stability. Finally, we show that the degradation mechanisms in blue PHOLEDs are fundamentally the same as those in green PHOLEDs. The limited stability of the blue devices is a result of faster deterioration in the quantum yield of the emitter.

  1. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  2. Substrate structures for InP-based devices

    DOEpatents

    Wanlass, Mark W.; Sheldon, Peter

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

  3. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    PubMed

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  4. Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liang, Dong; Peng, Yuelin; Fu, Yongping

    Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

  5. Color-Pure Violet-Light-Emitting Diodes Based on Layered Lead Halide Perovskite Nanoplates

    DOE PAGES

    Liang, Dong; Peng, Yuelin; Fu, Yongping; ...

    2016-06-23

    Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room- temperature solution-processed lead halide perovskites with high- efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C 6H 5CH 2CH 2NH 3 +, PEA) lead bromide [(PEA) 2PbBr 4]. The natural quantum confinement of two-dimen- sional layered perovskite (PEA) 2PbBr 4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA) 2PbBr 4 nanoplates using solvent vapor annealing,more » we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA) 2PbBr 4 samples and the external quantum efficiency of the violet LED. Finally, the solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.« less

  6. Electroluminescence from ZnCuInS/ZnS quantum dots/poly(9-vinylcarbazole) multilayer films with different thicknesses of quantum dot layer

    NASA Astrophysics Data System (ADS)

    Dong, Xiaofei; Xu, Jianping; Shi, Shaobo; Zhang, Xiaosong; Li, Lan; Yin, Shougen

    2017-05-01

    We report tunable electroluminescence (EL) from solution-processed ZnCuInS/ZnS (ZCIS/ZnS) quantum dots (QDs)/poly(9-vinlycarbazole) multilayer films. The EL spectra exhibit a red shift as the QD layer thickness increases. By analyzing the dependence of the applied voltage and the ZCIS/ZnS QD layer thickness on the EL spectra, the origin of the red shift is associated with the increased trap density of QDs that induces the injected electrons to be trapped in the deep donor level. The current conduction mechanism based on the current density-voltage curves at different voltage regions was discussed.

  7. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  8. Investigations on electroluminescent tapes and foils in relation to their applications in automotive

    NASA Astrophysics Data System (ADS)

    Plotog, Ioan

    2015-02-01

    The electroluminescent (EL) tapes or foils having barrier films for an additional level of protection against the toughest environments conditions, offer a large area of applications. The EL lights, due to their characteristics, began to be used not only in the entertainment industry, but also for automotive and aerospace applications. In the paper, the investigations regarding EL foils technical performances in relation to their applications as light sources in automotive ambient light were presented. The experiments were designed based on the results of EL foils electrical properties previous investigations done in laboratory conditions, taking into account the range of automotive ambient temperatures for sinusoidal alternative supply voltage. The measurements for different temperatures were done by keeping the EL foils into electronic controlled oven that ensures the dark enclosure offering conditions to use a lux-meter in order to measure and maintain under control light emission intensity. The experiments results define the EL foils characteristics as load in automotive ambient temperatures condition, assuring so the data for optimal design of a dedicated inverter.

  9. Graphene devices based on laser scribing technology

    NASA Astrophysics Data System (ADS)

    Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

    2018-04-01

    Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

  10. Energy-Based Devices in Treatment of Acne Vulgaris.

    PubMed

    Handler, Marc Z; Bloom, Bradley S; Goldberg, David J

    2016-05-01

    Acne vulgaris is a chronic dermatologic complaint with a multifactorial cause. Traditionally, antibiotics and retinoids have been used to manage the condition; patient compliance has been an ongoing issue. A variety of energy-based devices have been reported to be effective in the treatment of acne vulgaris. To review and summarize the current literature specific to treatment of acne vulgaris with energy-based devices. A review of the current literature of energy-based devices used for the treatment of acne vulgaris. Although limited randomized controlled trials for the treatment of acne have been performed, significant clinical improvement of acne vulgaris, especially of inflammatory lesions, has been demonstrated with a variety of energy-based devices. Newer approaches may lead to even better results.

  11. Surface electroluminescence phenomena correlated with trapping parameters of insulating polymers

    NASA Astrophysics Data System (ADS)

    Zhang, Guan-Jun; Yang, Kai; Dong, Ming; Zhao, Wen-Bin; Yan, Zhang

    2007-12-01

    Electroluminescence (EL) phenomena are closely linked to the space charge and degradation in insulating polymers, and dominated by the luminescence and trap centers. EL emission has been promising in defining the onset of electrical aging and in the investigation of dissipation mechanisms. Generally, polymeric degradation reveals the increment of the density of luminescence and trap centers, so a fundamental study is proposed to correlate the EL emission of insulating polymers and their trapping parameters. A sensitive photon counting system is constructed to detect the weak EL. The time- and phase-resolved EL characteristics from different polymers (LDPE, PP and PTFE) are investigated with a planar electrode configuration under stepped ac voltage in vacuum. In succession, each sample is charged with exposing to multi-needle corona discharge, and then its surface potential decay is continuously recorded at a constant temperature. Based on the isothermal relaxation current theory, the energy level and density of both electron and hole trap distribution in the surface layer of each polymer is obtained. It is preliminarily concluded that EL phenomena are strongly affected by the trap properties, and for different polymers, its EL intensity is in direct contrast to its surface trap density, and this can be qualitatively explained by the trapping and detrapping sequence of charge carriers in trap centers with different energy level.

  12. Remote media vision-based computer input device

    NASA Astrophysics Data System (ADS)

    Arabnia, Hamid R.; Chen, Ching-Yi

    1991-11-01

    In this paper, we introduce a vision-based computer input device which has been built at the University of Georgia. The user of this system gives commands to the computer without touching any physical device. The system receives input through a CCD camera; it is PC- based and is built on top of the DOS operating system. The major components of the input device are: a monitor, an image capturing board, a CCD camera, and some software (developed by use). These are interfaced with a standard PC running under the DOS operating system.

  13. A Flexible Microcontroller-Based Data Acquisition Device

    PubMed Central

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment. PMID:24892494

  14. A flexible microcontroller-based data acquisition device.

    PubMed

    Hercog, Darko; Gergič, Bojan

    2014-06-02

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  15. Model-based engineering for medical-device software.

    PubMed

    Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

    2010-01-01

    This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1.

  16. Carbon Based Transistors and Nanoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  17. Active polarisation control of a quantum cascade laser using tuneable birefringence in waveguides.

    PubMed

    Dhirhe, D; Slight, T J; Holmes, B M; Ironside, C N

    2013-10-07

    We discuss the design, modelling, fabrication and characterisation of an integrated tuneable birefringent waveguide for quantum cascade lasers. We have fabricated quantum cascade lasers operating at wavelengths around 4450 nm that include polarisation mode converters and a differential phase shift section. We employed below laser threshold electroluminescence to investigate the single pass operation of the integrated device. We use a theory based on the electro-optic properties of birefringence in quantum cascade laser waveguides combined with a Jones matrix based description to gain an understanding of the electroluminescence results. With the quantum cascade lasers operating above threshold we demonstrated polarisation control of the output.

  18. Cellphone-based devices for bioanalytical sciences

    PubMed Central

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-01-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  19. Innovative energy absorbing devices based on composite tubes

    NASA Astrophysics Data System (ADS)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  20. Localized Surface Plasmon-Enhanced Electroluminescence in OLEDs by Self-Assembly Ag Nanoparticle Film

    NASA Astrophysics Data System (ADS)

    He, Xiaoxiao; Wang, Wenjun; Li, Shuhong; Wang, Qingru; Zheng, Wanquan; Shi, Qiang; Liu, Yunlong

    2015-12-01

    We fabricated Ag nanoparticle (NP) film in organic light emission diodes (OLEDs), and a 23 times increase in electroluminescence (EL) at 518 nm was probed by time-resolved EL measurement. The luminance and relative external quantum efficiency (REQE) were increased by 5.4 and 3.7 times, respectively. There comes a new energy transport way that localized surface plasmons (LSPs) would absorb energy that corresponds to the electron-hole pair before recombination, promoting the formation of electron-hole pair and exciting local surface plasmon resonance (LSPR). The extended lifetime of Alq3 indicates the existence of strong interaction between LSPR and exciton, which decreases the nonradiative decay rate of OLEDs.

  1. Magnetic field effect in organic films and devices

    NASA Astrophysics Data System (ADS)

    Gautam, Bhoj Raj

    In this work, we focused on the magnetic field effect in organic films and devices, including organic light emitting diodes (OLEDs) and organic photovoltaic (OPV) cells. We measured magnetic field effect (MFE) such as magnetoconductance (MC) and magneto-electroluminescence (MEL) in OLEDs based on several pi- conjugated polymers and small molecules for fields |B|<100 mT. We found that both MC(B) and MEL(B) responses in bipolar devices and MC(B) response in unipolar devices are composed of two B-regions: (i) an 'ultra-small' region at |B| < 1-2 mT, and (ii) a monotonic response region at |B| >˜2mT. Magnetic field effect (MFE) measured on three isotopes of Poly (dioctyloxy) phenylenevinylene (DOO-PPV) showed that both regular and ultra-small effects are isotope dependent. This indicates that MFE response in OLED is mainly due to the hyperfine interaction (HFI). We also performed spectroscopy of the MFE including magneto-photoinduced absorption (MPA) and magneto-photoluminescence (MPL) at steady state conditions in several systems. This includes pristine Poly[2-methoxy-5-(2-ethylhexyl-oxy)-1,4-phenylene-vinylene] (MEH-PPV) films, MEH-PPV films subjected to prolonged illumination, and MEH-PPV/[6,6]-Phenyl C61 butyric acid methyl ester (PCBM) blend, as well as annealed and pristine C60 thin films. For comparison, we also measured MC and MEL in organic diodes based on the same materials. By directly comparing the MPA and MPL responses in films to MC and MEL in organic diodes based on the same active layers, we are able to relate the MFE in organic diodes to the spin densities of the excitations formed in the device, regardless of whether they are formed by photon absorption or carrier injection from the electrodes. We also studied magneto-photocurrent (MPC) and power conversion efficiency (PCE) of a 'standard' Poly (3-hexylthiophene)/PCBM device at various Galvinoxyl radical wt%. We found that the MPC reduction with Galvinoxyl wt% follows the same trend as that of the

  2. Paper‐Based Electrodes for Flexible Energy Storage Devices

    PubMed Central

    Yao, Bin; Zhang, Jing; Kou, Tianyi; Song, Yu; Liu, Tianyu

    2017-01-01

    Paper‐based materials are emerging as a new category of advanced electrodes for flexible energy storage devices, including supercapacitors, Li‐ion batteries, Li‐S batteries, Li‐oxygen batteries. This review summarizes recent advances in the synthesis of paper‐based electrodes, including paper‐supported electrodes and paper‐like electrodes. Their structural features, electrochemical performances and implementation as electrodes for flexible energy storage devices including supercapacitors and batteries are highlighted and compared. Finally, we also discuss the challenges and opportunity of paper‐based electrodes and energy storage devices. PMID:28725532

  3. White perovskite based lighting devices.

    PubMed

    Bidikoudi, M; Fresta, E; Costa, R D

    2018-06-28

    Hybrid organic-inorganic and all-inorganic metal halide perovskites have been one of the most intensively studied materials during the last few years. In particular, research focusing on understanding how to tune the photoluminescence features and to apply perovskites to optoelectronic applications has led to a myriad of new materials featuring high photoluminescence quantum yields covering the whole visible range, as well as devices with remarkable performances. Having already established their successful incorporation in highly efficient solar cells, the next step is to tackle the challenges in solid-state lighting (SSL) devices. Here, the most prominent is the preparation of white-emitting devices. Herein, we have provided a comprehensive view of the route towards perovskite white lighting devices, including thin film light-emitting diodes (PeLEDs) and hybrid LEDs (HLEDs), using perovskite based color down-converting coatings. While synthesis and photoluminescence features are briefly discussed, we focus on highlighting the major achievements and limitations in white devices. Overall, we expect that this review will provide the reader a general overview of the current state of perovskite white SSL, paving the way towards new breakthroughs in the near future.

  4. Nanostructured Sublayers for Improved Light Extraction of Top-Emitting and Transparent Organic Electroluminescent Devices

    DTIC Science & Technology

    2007-05-01

    luminous efficiency and wider color gamut . In addition, organic phosphorescent light emitting materials and devices were studied. 15. SUBJECT TERMS...nanostructured Bragg mirrors provided an improved external luminous efficiency and wide color gamut , which will be an essential part of future flat-panel...layers (usually with an ultra-thin shadow mask) or the fabrication of anodes with variable thickness have been used to achieve enhanced color gamut

  5. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. The nature of trapping sites and recombination centres in PVK and PVK-PBD electroluminescent matrices seen by spectrally resolved thermoluminescence

    NASA Astrophysics Data System (ADS)

    Glowacki, Ireneusz; Szamel, Zbigniew

    2010-07-01

    Two electroluminescent polymer matrices poly(N-vinylcarbazole) (PVK) and PVK with 40 wt% of 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) were studied using spectrally resolved thermoluminescence (SRTL) in the temperature range 15-325 K. The comparison of the SRTL results with the electroluminescence (EL) spectra has allowed identification of the localized (trapping) sites and the radiative recombination centres present in the investigated matrices. In the neat PVK films deep traps with a depth about 200 meV, related to triplet excimers dominate, while in the PVK-PBD (40 wt%) blend films the traps that are related to triplet exciplexes formed by the carbazole groups and the PBD molecules dominate. Depth of the traps in the PVK-PBD blend is somewhat lower than that in the neat PVK. An analysis of the EL spectra shows that in the PVK and in the PVK-PBD blend the dominant radiative centres are singlet excimers and singlet exciplexes, respectively. However, in the neat PVK some contributions of the triplet monomer and the triplet excimer states in the EL were also detected.

  7. Printed Biopolymer-Based Electro-Optic Device Components

    DTIC Science & Technology

    2013-07-01

    devices and fabricated e-beam lithography-based master molds. Printed micro and nanostructures using a newly developed spin-on nanoprinting (SNAP...polymeric materials. Among the natural biopolymers , deoxyribonucleic acid (DNA) is an attractive material which can be used to make electronic and...photonic devices [2, 3]. If patterned on the micro and nanoscale using a soft lithography technique, high quality biodegradable optical devices can be

  8. High-Frequency Spin-Based Devices for Nanoscale Signal Processing

    DTIC Science & Technology

    2009-01-20

    feedback on the devices in order to improve their spectral properties . Deliverable: Microwave signals without an Applied Field. We have successfully...additionally have the advantage of higher operating frequencies than the more conventional devices based on NiFe alloys. By combining several of...Output from a Co/Ni based STNO. Corresponds to approximately 20 nW, about 10 times larger than typical NiFe .device. 6 High-Frequency Spin-Based

  9. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mo, Xiaoming; Long, Hao; Wang, Haoning

    2014-08-11

    We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emissionmore » at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.« less

  10. Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm‑1

    NASA Astrophysics Data System (ADS)

    Mandal, S.; Kanathila, M. B.; Pynn, C. D.; Li, W.; Gao, J.; Margalith, T.; Laurent, M. A.; Chowdhury, S.

    2018-06-01

    We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric field of 3 MV cm‑1 with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric field, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of field termination. The superior material quality was critical for such a near-ideal performance. An electric field of 3 MV cm‑1 recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.

  11. Network Coding in Relay-based Device-to-Device Communications

    PubMed Central

    Huang, Jun; Gharavi, Hamid; Yan, Huifang; Xing, Cong-cong

    2018-01-01

    Device-to-Device (D2D) communications has been realized as an effective means to improve network throughput, reduce transmission latency, and extend cellular coverage in 5G systems. Network coding is a well-established technique known for its capability to reduce the number of retransmissions. In this article, we review state-of-the-art network coding in relay-based D2D communications, in terms of application scenarios and network coding techniques. We then apply two representative network coding techniques to dual-hop D2D communications and present an efficient relay node selecting mechanism as a case study. We also outline potential future research directions, according to the current research challenges. Our intention is to provide researchers and practitioners with a comprehensive overview of the current research status in this area and hope that this article may motivate more researchers to participate in developing network coding techniques for different relay-based D2D communications scenarios. PMID:29503504

  12. Content-based image retrieval on mobile devices

    NASA Astrophysics Data System (ADS)

    Ahmad, Iftikhar; Abdullah, Shafaq; Kiranyaz, Serkan; Gabbouj, Moncef

    2005-03-01

    Content-based image retrieval area possesses a tremendous potential for exploration and utilization equally for researchers and people in industry due to its promising results. Expeditious retrieval of desired images requires indexing of the content in large-scale databases along with extraction of low-level features based on the content of these images. With the recent advances in wireless communication technology and availability of multimedia capable phones it has become vital to enable query operation in image databases and retrieve results based on the image content. In this paper we present a content-based image retrieval system for mobile platforms, providing the capability of content-based query to any mobile device that supports Java platform. The system consists of light-weight client application running on a Java enabled device and a server containing a servlet running inside a Java enabled web server. The server responds to image query using efficient native code from selected image database. The client application, running on a mobile phone, is able to initiate a query request, which is handled by a servlet in the server for finding closest match to the queried image. The retrieved results are transmitted over mobile network and images are displayed on the mobile phone. We conclude that such system serves as a basis of content-based information retrieval on wireless devices and needs to cope up with factors such as constraints on hand-held devices and reduced network bandwidth available in mobile environments.

  13. GdN nanoisland-based GaN tunnel junctions.

    PubMed

    Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

    2013-06-12

    Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

  14. Characterization of emitted light from travelling Gunn domains in Al0.08Ga0.92As alloy based Gunn devices

    NASA Astrophysics Data System (ADS)

    Cetinkaya, Caglar; Mutlu, Selman; Donmez, Omer; Erol, Ayse

    2017-11-01

    We report room temperature operation of light emitters based on Al0.08Ga0.92As Gunn devices fabricated in a simple bar geometry with wedged-shaped electrodes. High-speed I-V measurements reveal that, at the threshold of negative differential resistance region at around 3.8 kV/cm, current instabilities, i.e., Gunn oscillations, are created with a 3.8 ns period. Both edge and surface light emission are observed when the device is biased at an electric field of onset of the negative differential resistance (NDR) region at around 3.8 kV/cm and the intensity of the light exponentially increases at applied fields just above NDR threshold likewise in a conventional laser. The origin of the light emission, which has peak wavelength is around 816 nm corresponds to the band-gap energy of Al0.08Ga0.92As, is recombination of electrons and holes generated by impact ionisation process in travelling space charge domains, i.e., Gunn domains. We demonstrate that, with increasing applied field, the amplitude of Gunn domains increases which is a result of the enhanced generation of electrons and holes via impact ionisation. The intensity of the emitted light is observed to be dependent on applied electric field. At low electric fields, light intensity increases linearly then, when applied electric field reaches the onset of NDR region, increases exponentially. Besides, as applied field is increased, full width at half maximum (FWHM) of emitted light decreases to 56.5 nm from 62 nm, evolving into higher selective emission line in wavelength. The light emission from the device is determined to be independent of the polarity of the applied voltage. A comparison of surface emission and edge emission characteristics of the waveguided device are different from each other. Edge emission has higher electroluminescence intensity and better spectral purity than surface emission with well-defined longitudinal modes of Fabry-Pérot cavity, which indicates that, in such a device, lasing action

  15. Electrical and Luminescent Properties of Color-Changeable Organic Electroluminescent Diode Using Squarylium Dyes

    NASA Astrophysics Data System (ADS)

    Mori, Tatsuo; Miyachi, Kiyokazu; Kichimi, Tomoaki; Mizutani, Teruyoshi

    1994-12-01

    The organic electoluminescent diode (LED) with squarylium (Sq) dye-doped Alq3 changes color upon application of voltage (current). The luminescent color from the organic LED changes from red (electroluminescence (EL) of Sq dye) at low voltage to light green (EL of Alq3) at high voltage. We studied the EL efficiency and EL spectrum of organic Sq-doped Alq3 LED with various doping positions in the emission layer. Consequentially, it was clarified that Sq doping near TPD considerably reduced the EL efficiency. The EL mechanism of the organic LED was concluded to be associated with the energy transfer from the excited Alq3 to the guest dye and hole trapping of the guest dye in Alq3.

  16. Advances in display technology III; Proceedings of the Meeting, Los Angeles, CA, January 18, 19, 1983

    NASA Astrophysics Data System (ADS)

    Schlam, E.

    1983-01-01

    Human factors in visible displays are discussed, taking into account an introduction to color vision, a laser optometric assessment of visual display viewability, the quantification of color contrast, human performance evaluations of digital image quality, visual problems of office video display terminals, and contemporary problems in airborne displays. Other topics considered are related to electroluminescent technology, liquid crystal and related technologies, plasma technology, and display terminal and systems. Attention is given to the application of electroluminescent technology to personal computers, electroluminescent driving techniques, thin film electroluminescent devices with memory, the fabrication of very large electroluminescent displays, the operating properties of thermally addressed dye switching liquid crystal display, light field dichroic liquid crystal displays for very large area displays, and hardening military plasma displays for a nuclear environment.

  17. Polymer-based electrocaloric cooling devices

    DOEpatents

    Zhang, Qiming; Lu, Sheng-Guo; Li, Xinyu; Gorny, Lee; Cheng, Jiping; Neese, Bret P; Chu, Baojin

    2014-10-28

    Cooling devices (i.e., refrigerators or heat pumps) based on polymers which exhibit a temperature change upon application or removal of an electrical field or voltage, (e.g., fluoropolymers or crosslinked fluoropolymers that exhibit electrocaloric effect).

  18. An investigation of paper based microfluidic devices for size based separation and extraction applications.

    PubMed

    Zhong, Z W; Wu, R G; Wang, Z P; Tan, H L

    2015-09-01

    Conventional microfluidic devices are typically complex and expensive. The devices require the use of pneumatic control systems or highly precise pumps to control the flow in the devices. This work investigates an alternative method using paper based microfluidic devices to replace conventional microfluidic devices. Size based separation and extraction experiments conducted were able to separate free dye from a mixed protein and dye solution. Experimental results showed that pure fluorescein isothiocyanate could be separated from a solution of mixed fluorescein isothiocyanate and fluorescein isothiocyanate labeled bovine serum albumin. The analysis readings obtained from a spectrophotometer clearly show that the extracted tartrazine sample did not contain any amount of Blue-BSA, because its absorbance value was 0.000 measured at a wavelength of 590nm, which correlated to Blue-BSA. These demonstrate that paper based microfluidic devices, which are inexpensive and easy to implement, can potentially replace their conventional counterparts by the use of simple geometry designs and the capillary action. These findings will potentially help in future developments of paper based microfluidic devices. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. Value-based procurement of medical devices: Application to devices for mechanical thrombectomy in ischemic stroke.

    PubMed

    Trippoli, Sabrina; Caccese, Erminia; Marinai, Claudio; Messori, Andrea

    2018-03-01

    In the acute ischemic stroke, endovascular devices have shown promising clinical results and are also likely to represent value for money, as several modeling studies have shown. Pharmacoeconomic evaluations in this field, however, have little impact on the procurement of these devices. The present study explored how complex pharmacoeconomic models that evaluate effectiveness and cost can be incorporated into the in-hospital procurement of thrombectomy devices. As regards clinical modeling, we extracted outcomes at three months from randomized trials conducted for four thrombectomy devices, and we projected long-term results using standard Markov modeling. In estimating QALYs, the same model was run for the four devices. As regards economic modeling, we firstly estimated for each device the net monetary benefit (NMB) per patient (threshold = $60,000 per QALY); then, we simulated a competitive tender across the four products by determining the tender-based score (on a 0-to-100 scale). Prices of individual devices were obtained from manufacturers. Extensive sensitivity testing was applied to our analyses. For the four devices (Solitaire, Trevo, Penumbra, Solumbra), QALYs were 1.86, 1.52, 1,79, 1.35, NMB was $101,824, $83,546, $101,923, $69,440, and tender-based scores were 99.70, 43.43, 100, 0, respectively. Sensitivity analysis confirmed findings from base-case. Our results indicate that, in the field of thrombectomy devices, incorporating the typical tools of cost-effectiveness into the processes of tenders and procurement is feasible. Bridging the methodology of cost-effectiveness with the every-day practice of in-hospital procurement can contribute to maximizing the health returns that are generated by in-hospital expenditures for medical devices. Copyright © 2018 Elsevier B.V. All rights reserved.

  20. Spectral features and voltage effects in high-field electroluminescence of AlN filamentary nanocrystals

    NASA Astrophysics Data System (ADS)

    Weinstein, I. A.; Vokhmintsev, A. S.; Chaikin, D. V.; Afonin, Yu. D.

    2016-11-01

    The high-field electroluminescence (EL) spectra for Al-rich AlN nanowhiskers varying applied voltage were studied. The observed 2.70 eV emission, which can be considered as superposition of two Gaussian bands in 2.75 and 2.53 eV, was analyzed. It was shown that Fowler-Nordheim effect took place in EL mechanism with participation of capturing levels of ON- and VN-centers when AlN nanowhiskers were exposed to an external field of 2.5 ÷ 10 V/μm. Obtained results and made conclusions are in a good agreement with independent electron field emission measurements for different one-dimensional AlN nanostructures.

  1. Silicon Nanowire-Based Devices for Gas-Phase Sensing

    PubMed Central

    Cao, Anping; Sudhölter, Ernst J.R.; de Smet, Louis C.P.M.

    2014-01-01

    Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed. PMID:24368699

  2. Device considerations for development of conductance-based biosensors

    PubMed Central

    Lee, Kangho; Nair, Pradeep R.; Scott, Adina; Alam, Muhammad A.; Janes, David B.

    2009-01-01

    Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors. PMID:24753627

  3. Adaptive Device Context Based Mobile Learning Systems

    ERIC Educational Resources Information Center

    Pu, Haitao; Lin, Jinjiao; Song, Yanwei; Liu, Fasheng

    2011-01-01

    Mobile learning is e-learning delivered through mobile computing devices, which represents the next stage of computer-aided, multi-media based learning. Therefore, mobile learning is transforming the way of traditional education. However, as most current e-learning systems and their contents are not suitable for mobile devices, an approach for…

  4. A novel conduit-based coaptation device for primary nerve repair.

    PubMed

    Bamba, Ravinder; Riley, D Colton; Kelm, Nathaniel D; Cardwell, Nancy; Pollins, Alonda C; Afshari, Ashkan; Nguyen, Lyly; Dortch, Richard D; Thayer, Wesley P

    2018-06-01

    Conduit-based nerve repairs are commonly used for small nerve gaps, whereas primary repair may be performed if there is no tension on nerve endings. We hypothesize that a conduit-based nerve coaptation device will improve nerve repair outcomes by avoiding sutures at the nerve repair site and utilizing the advantages of a conduit-based repair. The left sciatic nerves of female Sprague-Dawley rats were transected and repaired using a novel conduit-based device. The conduit-based device group was compared to a control group of rats that underwent a standard end-to-end microsurgical repair of the sciatic nerve. Animals underwent behavioral assessments at weekly intervals post-operatively using the sciatic functional index (SFI) test. Animals were sacrificed at four weeks to obtain motor axon counts from immunohistochemistry. A sub-group of animals were sacrificed immediately post repair to obtain MRI images. SFI scores were superior in rats which received conduit-based repairs compared to the control group. Motor axon counts distal to the injury in the device group at four weeks were statistically superior to the control group. MRI tractography was used to demonstrate repair of two nerves using the novel conduit device. A conduit-based nerve coaptation device avoids sutures at the nerve repair site and leads to improved outcomes in a rat model. Conduit-based nerve repair devices have the potential to standardize nerve repairs while improving outcomes.

  5. Product-based Safety Certification for Medical Devices Embedded Software.

    PubMed

    Neto, José Augusto; Figueiredo Damásio, Jemerson; Monthaler, Paul; Morais, Misael

    2015-01-01

    Worldwide medical device embedded software certification practices are currently focused on manufacturing best practices. In Brazil, the national regulatory agency does not hold a local certification process for software-intensive medical devices and admits international certification (e.g. FDA and CE) from local and international industry to operate in the Brazilian health care market. We present here a product-based certification process as a candidate process to support the Brazilian regulatory agency ANVISA in medical device software regulation. Center of Strategic Technology for Healthcare (NUTES) medical device embedded software certification is based on a solid safety quality model and has been tested with reasonable success against the Class I risk device Generic Infusion Pump (GIP).

  6. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  7. Carbon-Nanotube-Based Thermoelectric Materials and Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Blackburn, Jeffrey L.; Ferguson, Andrew J.; Cho, Chungyeon

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specificmore » energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.« less

  8. Carbon-Nanotube-Based Thermoelectric Materials and Devices

    DOE PAGES

    Blackburn, Jeffrey L.; Ferguson, Andrew J.; Cho, Chungyeon; ...

    2018-01-22

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specificmore » energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.« less

  9. Carbon-Nanotube-Based Thermoelectric Materials and Devices.

    PubMed

    Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

    2018-03-01

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

    NASA Astrophysics Data System (ADS)

    Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

    2004-07-01

    In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

  11. Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

    PubMed

    Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

    2017-10-19

    With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

  12. Field-Based Experiential Learning Using Mobile Devices

    NASA Astrophysics Data System (ADS)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  13. Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

    PubMed

    Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

    2017-04-12

    Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

  14. Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

    PubMed

    Fang, Xuan; Wei, Zhipeng; Yang, Yahui; Chen, Rui; Li, Yongfeng; Tang, Jilong; Fang, Dan; Jia, Huimin; Wang, Dengkui; Fan, Jie; Ma, Xiaohui; Yao, Bin; Wang, Xiaohua

    2016-01-27

    We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

  15. Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.

    PubMed

    Jha, Shrawan; Qian, Jin-Cheng; Kutsay, Oleksandr; Kovac, Jaroslav; Luan, Chun-Yan; Zapien, Juan Antonio; Zhang, Wenjun; Lee, Shuit-Tong; Bello, Igor

    2011-06-17

    In this paper, we report a fabrication, characterization and stability study of p-GaN/n-ZnO nanorod heterojunction light-emitting devices (LEDs). The LEDs were assembled from arrays of n-ZnO vertical nanorods epitaxially grown on p-GaN. LEDs showed bright electroluminescence in blue (440 nm), although weaker violet (372 nm) and green-yellow (550 nm) spectral components were also observed. The device characteristics are generally stable and reproducible. The LEDs have a low turn-on voltage (∼5 V). The electroluminescence (EL) is intense enough to be noticed by the naked eye, at an injection current as low as ∼ 40 µA (2.1 × 10(-2) A cm(-2) at 7 V bias). Analysis of the materials, electrical and EL investigations point to the role of a high quality of p-n nano-heterojunction which facilitates a large rectification ratio (320) and a stable reverse current of 2.8 µA (1.4 × 10(-3) A cm(-2) at 5 V). Stability of EL characteristics was investigated in detail. EL intensity showed systematic degradation over a short duration when the LED was bias-stressed at 30 V. At smaller bias (<20 V) LEDs tend to show a stable and repeatable EL characteristic. Thus a simple low temperature solution growth method was successfully exploited to realize nanorod/film heterojunction LED devices with predictable characteristics.

  16. COUGAR: a liquid nitrogen cooled InGaAs camera for astronomy and electro-luminescence

    NASA Astrophysics Data System (ADS)

    Van Bogget, Urbain; Vervenne, Vincent; Vinella, Rosa Maria; van der Zanden, Koen; Merken, Patrick; Vermeiren, Jan

    2014-06-01

    A SWIR FPA was designed and manufactured with 640*512 pixels, 20 μm pitch and InGaAs detectors for electroluminescence characterization and astronomical applications in the [0.9 - 1.55 μm] range. The FPA is mounted in a liquid nitrogen dewar and is operated by a low noise frontend electronics. One of the biggest problem in designing sensors and cameras for electro-luminescence measurements is the autoillumination of the detectors by the readout circuit. Besides of proper shielding of the detectors, the ROIC shall be optimized for minimal electrical activity during the integration time of the very-weak signals coming from the circuit under test. For this reason a SFD (or Source Follower per Detector) architecture (like in the Hawaii sensor) was selected, resulting in a background limited performance of the detector. The pixel has a (somewhat arbitrary) full well capacity of 400 000 e- and a sensitivity of 2.17 μV/e-. The dark signal is app. 1 e-/pixel/sec and with the appropriate Fowler sampling the dark noise lowers below 5 e-rms. The power consumption of the circuit is limited 2 mW, allowing more than 24 hours of operation on less than 1 l of liquid nitrogen. The FPA is equipped with 4 outputs (optional readout on one single channel) and is capable of achieving 3 frames per second. Due to the non-destructive readout it is possible to determine in a dynamic way the optimal integration time for each observation. The Cougar camera is equipped with ultra-low noise power supply and bias lines; the electronics contain also a 24 bit AD converter to fully exploit the sensitivity of the FPA and the camera.

  17. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  18. Photocurrent measurements of pentacene-based devices

    NASA Astrophysics Data System (ADS)

    Masurkar, Amrita; Kymissis, Ioannis

    2015-09-01

    Photocurrent spectroscopy (PCS) and photocurrent microscopy (PCM) are powerful tools that can probe the underlying mechanisms of charge generation and transport in organic semiconductor devices. There has been significant progress in the use of these techniques, which has yielded a number of insights into the underlying materials and operation of the devices. Despite the potential for PCS and PCM to become standard tools, however, a consensus has not been reached on (1) its uses and (2) the underlying mechanisms which produce the photoresponse. This is particularly true for measurements of pentacene devices, as the energy dynamics of pentacene are complex. Accordingly, here we report the current body of PCS and PCM of pentacene devices, offer interpretations of the data, and discuss which questions remain unanswered. We have divided the reviewed work into four categories based on the goals of the study and the technique used: photocurrent spectroscopy, scanning photocurrent microscopy, mobility, and trap density-of-states.

  19. Magnetoconductivity and magnetoluminescence studies in bipolar and almost hole-only sandwich devices made from films of a π-conjugated molecule

    PubMed Central

    Duc Nguyen, Tho; Sheng, Yugang; Rybicki, James E; Wohlgenannt, Markus

    2008-01-01

    We present magnetoconductivity and magnetoluminescence measurements in sandwich devices made from films of a π-conjugated molecule and demonstrate effects of more than 30 and 50% magnitude, respectively, in fields of 100 mT at room-temperature. It has previously been recognized that the effect is caused by hyperfine coupling, and that it is phenomenologically similar to other magnetic field effects that act on electron–hole pairs, which are well-known in spin-chemistry. However, we show that the very large magnitude of the effect contradicts present knowledge of the electron–hole pair recombination processes in electroluminescent π-conjugated molecules, and that the effect persists even in almost hole-only devices. Therefore, this effect is likely caused by the interaction of radical pairs of equal charge. PMID:27877957

  20. Si nanocrystals-based multilayers for luminescent and photovoltaic device applications

    NASA Astrophysics Data System (ADS)

    Lu, Peng; Li, Dongke; Cao, Yunqing; Xu, Jun; Chen, Kunji

    2018-06-01

    Low dimensional Si materials have attracted much attention because they can be developed in many kinds of new-generation nano-electronic and optoelectronic devices, among which Si nanocrystals-based multilayered material is one of the most promising candidates and has been extensively studied. By using multilayered structures, the size and distribution of nanocrystals as well as the barrier thickness between two adjacent Si nanocrystal layers can be well controlled, which is beneficial to the device applications. This paper presents an overview of the fabrication and device applications of Si nanocrystals, especially in luminescent and photovoltaic devices. We first introduce the fabrication methods of Si nanocrystals-based multilayers. Then, we systematically review the utilization of Si nanocrystals in luminescent and photovoltaic devices. Finally, some expectations for further development of the Si nanocrystals-based photonic and photovoltaic devices are proposed. Project supported by the National Natural Science Foundation of China (Nos. 11774155, 11274155).

  1. Empirically based device modeling of bulk heterojunction organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Pierre, Adrien; Lu, Shaofeng; Howard, Ian A.; Facchetti, Antonio; Arias, Ana Claudia

    2013-10-01

    An empirically based, open source, optoelectronic model is constructed to accurately simulate organic photovoltaic (OPV) devices. Bulk heterojunction OPV devices based on a new low band gap dithienothiophene- diketopyrrolopyrrole donor polymer (P(TBT-DPP)) are blended with PC70BM and processed under various conditions, with efficiencies up to 4.7%. The mobilities of electrons and holes, bimolecular recombination coefficients, exciton quenching efficiencies in donor and acceptor domains and optical constants of these devices are measured and input into the simulator to yield photocurrent with less than 7% error. The results from this model not only show carrier activity in the active layer but also elucidate new routes of device optimization by varying donor-acceptor composition as a function of position. Sets of high and low performance devices are investigated and compared side-by-side.

  2. Fabrication of Three-dimensional Paper-based Microfluidic Devices for Immunoassays.

    PubMed

    Fernandes, Syrena C; Wilson, Daniel J; Mace, Charles R

    2017-03-09

    Paper wicks fluids autonomously due to capillary action. By patterning paper with hydrophobic barriers, the transport of fluids can be controlled and directed within a layer of paper. Moreover, stacking multiple layers of patterned paper creates sophisticated three-dimensional microfluidic networks that can support the development of analytical and bioanalytical assays. Paper-based microfluidic devices are inexpensive, portable, easy to use, and require no external equipment to operate. As a result, they hold great promise as a platform for point-of-care diagnostics. In order to properly evaluate the utility and analytical performance of paper-based devices, suitable methods must be developed to ensure their manufacture is reproducible and at a scale that is appropriate for laboratory settings. In this manuscript, a method to fabricate a general device architecture that can be used for paper-based immunoassays is described. We use a form of additive manufacturing (multi-layer lamination) to prepare devices that comprise multiple layers of patterned paper and patterned adhesive. In addition to demonstrating the proper use of these three-dimensional paper-based microfluidic devices with an immunoassay for human chorionic gonadotropin (hCG), errors in the manufacturing process that may result in device failures are discussed. We expect this approach to manufacturing paper-based devices will find broad utility in the development of analytical applications designed specifically for limited-resource settings.

  3. Learning in and from brain-based devices.

    PubMed

    Edelman, Gerald M

    2007-11-16

    Biologically based mobile devices have been constructed that differ from robots based on artificial intelligence. These brain-based devices (BBDs) contain simulated brains that autonomously categorize signals from the environment without a priori instruction. Two such BBDs, Darwin VII and Darwin X, are described here. Darwin VII recognizes objects and links categories to behavior through instrumental conditioning. Darwin X puts together the "what,"when," and "where" from cues in the environment into an episodic memory that allows it to find a desired target. Although these BBDs are designed to provide insights into how the brain works, their principles may find uses in building hybrid machines. These machines would combine the learning ability of BBDs with explicitly programmed control systems.

  4. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    PubMed

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  5. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

    PubMed

    Willander, M; Nur, O; Zhao, Q X; Yang, L L; Lorenz, M; Cao, B Q; Zúñiga Pérez, J; Czekalla, C; Zimmermann, G; Grundmann, M; Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A; Boukos, N; Travlos, A; Kwack, H S; Guinard, J; Le Si Dang, D

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  6. Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

    2015-02-01

    We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

  7. Broad-gain (Δλ/λ0

    PubMed

    Fujita, Kazuue; Furuta, Shinichi; Dougakiuchi, Tatsuo; Sugiyama, Atsushi; Edamura, Tadataka; Yamanishi, Masamichi

    2011-01-31

    Broad-gain operation of λ~8.7 μm quantum cascade lasers based on dual-upper-state to multiple-lower-state transition design is reported. The devices exhibit surprisingly wide (~500 cm(-1)) electroluminescence spectra which are very insensitive to voltage and temperature changes above room temperature. With recourse to the temperature-insensitivity of electroluminescence spectra, the lasers demonstrate an extremely-weak temperature-dependence of laser performances: T0-value of 510 K, associated with a room temperature threshold current density of 2.6 kA/cm2. In addition, despite such wide gain spectra, room temperature, continuous wave operation of the laser with buried hetero structure is achieved.

  8. Extremely low amplified spontaneous emission threshold and blue electroluminescence from a spin-coated octafluorene neat film

    NASA Astrophysics Data System (ADS)

    Kim, D.-H.; Sandanayaka, A. S. D.; Zhao, L.; Pitrat, D.; Mulatier, J. C.; Matsushima, T.; Andraud, C.; Ribierre, J. C.; Adachi, C.

    2017-01-01

    We report on the photophysical, amplified spontaneous emission (ASE), and electroluminescence properties of a blue-emitting octafluorene derivative in spin-coated films. The neat film shows an extremely low ASE threshold of 90 nJ/cm2, which is related to its high photoluminescence quantum yield of 87% and its large radiative decay rate of 1.7 × 109 s-1. Low-threshold organic distributed feedback semiconductor lasers and fluorescent organic light-emitting diodes with a maximum external quantum efficiency as high as 4.4% are then demonstrated, providing evidence that this octafluorene derivative is a promising candidate for organic laser applications.

  9. Wearable Triboelectric Generator for Powering the Portable Electronic Devices.

    PubMed

    Cui, Nuanyang; Liu, Jinmei; Gu, Long; Bai, Suo; Chen, Xiaobo; Qin, Yong

    2015-08-26

    A cloth-base wearable triboelectric nanogenerator made of nylon and Dacron fabric was fabricated for harvesting body motion energy. Through the friction between forearm and human body, the generator can turn the mechanical energy of an arm swing into electric energy and power an electroluminescent tubelike lamp easily. The maximum output current and voltage of the generator reach up to 0.2 mA and 2 kV. Furthermore, this generator can be easily folded, kneaded, and cleaned like a common garment.

  10. Fabrication techniques and applications of flexible graphene-based electronic devices

    NASA Astrophysics Data System (ADS)

    Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

    2016-04-01

    In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

  11. Devices based on surface plasmon interference filters

    NASA Technical Reports Server (NTRS)

    Wang, Yu (Inventor)

    2001-01-01

    Devices based on surface plasmon filters having at least one metal-dielectric interface to support surface plasmon waves. A multi-layer-coupled surface plasmon notch filter is provided to have more than two symmetric metal-dielectric interfaces coupled with one another to produce a transmission spectral window with desired spectral profile and bandwidth. Such notch filters can form various color filtering devices for color flat panel displays.

  12. Advanced Materials for Health Monitoring with Skin-Based Wearable Devices.

    PubMed

    Jin, Han; Abu-Raya, Yasmin Shibli; Haick, Hossam

    2017-06-01

    Skin-based wearable devices have a great potential that could result in a revolutionary approach to health monitoring and diagnosing disease. With continued innovation and intensive attention to the materials and fabrication technologies, development of these healthcare devices is progressively encouraged. This article gives a concise, although admittedly non-exhaustive, didactic review of some of the main concepts and approaches related to recent advances and developments in the scope of skin-based wearable devices (e.g. temperature, strain, biomarker-analysis werable devices, etc.), with an emphasis on emerging materials and fabrication techniques in the relevant fields. To give a comprehensive statement, part of the review presents and discusses different aspects of these advanced materials, such as the sensitivity, biocompatibility and durability as well as the major approaches proposed for enhancing their chemical and physical properties. A complementary section of the review linking these advanced materials with wearable device technologies is particularly specified. Some of the strong and weak points in development of each wearable material/device are highlighted and criticized. Several ideas regarding further improvement of skin-based wearable devices are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Highly air stable passivation of graphene based field effect devices.

    PubMed

    Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

    2015-02-28

    The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

  14. Improving Sample Distribution Homogeneity in Three-Dimensional Microfluidic Paper-Based Analytical Devices by Rational Device Design.

    PubMed

    Morbioli, Giorgio Gianini; Mazzu-Nascimento, Thiago; Milan, Luis Aparecido; Stockton, Amanda M; Carrilho, Emanuel

    2017-05-02

    Paper-based devices are a portable, user-friendly, and affordable technology that is one of the best analytical tools for inexpensive diagnostic devices. Three-dimensional microfluidic paper-based analytical devices (3D-μPADs) are an evolution of single layer devices and they permit effective sample dispersion, individual layer treatment, and multiplex analytical assays. Here, we present the rational design of a wax-printed 3D-μPAD that enables more homogeneous permeation of fluids along the cellulose matrix than other existing designs in the literature. Moreover, we show the importance of the rational design of channels on these devices using glucose oxidase, peroxidase, and 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid) (ABTS) reactions. We present an alternative method for layer stacking using a magnetic apparatus, which facilitates fluidic dispersion and improves the reproducibility of tests performed on 3D-μPADs. We also provide the optimized designs for printing, facilitating further studies using 3D-μPADs.

  15. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  16. Efficacy of Low-Cost PC-Based Aviation Training Devices

    ERIC Educational Resources Information Center

    Reweti, Savern; Gilbey, Andrew; Jeffrey, Lynn

    2017-01-01

    Aim/Purpose: The aim of this study was to explore whether a full cost flight training device (FTD) was significantly better for simulator training than a low cost PC-Based Aviation Training Device (PCATD). Background: A quasi-transfer study was undertaken to ascertain whether a Civil Aviation Authority certified Flight Training Device (FTD) was…

  17. SEMICONDUCTOR DEVICES: A Ga-doped ZnO transparent conduct layer for GaN-based LEDs

    NASA Astrophysics Data System (ADS)

    Zhen, Liu; Xiaofeng, Wang; Hua, Yang; Yao, Duan; Yiping, Zeng

    2010-09-01

    An 8 μm thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2:24 ± 0:21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.

  18. Mobile device-based optical instruments for agriculture

    NASA Astrophysics Data System (ADS)

    Sumriddetchkajorn, Sarun

    2013-05-01

    Realizing that a current smart-mobile device such as a cell phone and a tablet can be considered as a pocket-size computer embedded with a built-in digital camera, this paper reviews and demonstrates on how a mobile device can be specifically functioned as a portable optical instrument for agricultural applications. The paper highlights several mobile device-based optical instruments designed for searching small pests, measuring illumination level, analyzing spectrum of light, identifying nitrogen status in the rice field, estimating chlorine in water, and determining ripeness level of the fruit. They are suitable for individual use as well as for small and medium enterprises.

  19. Polarized organic light-emitting device on a flexible giant birefringent optical reflecting polarizer substrate.

    PubMed

    Park, Byoungchoo; Park, Chan Hyuk; Kim, Mina; Han, Mi-Young

    2009-06-08

    We present the results of a study of highly linear polarized light emissions from an Organic Light-Emitting Device (OLED) that consisted of a flexible Giant Birefringent Optical (GBO) multilayer polymer reflecting polarizer substrate. Luminous Electroluminescent (EL) emissions over 4,500 cd/m(2) were produced from the polarized OLED with high peak efficiencies in excess of 6 cd/A and 2 lm/W at relatively low operating voltages. The direction of polarization for the emitted EL light corresponded to the passing (ordinary) axis of the GBO-reflecting polarizer. Furthermore, the estimated polarization ratio between the brightness of two linearly polarized EL emissions parallel and perpendicular to the passing axis could be as high as 25 when measured over the whole emitted luminance range.

  20. Double-Sided Electrochromic Device Based on Metal-Organic Frameworks.

    PubMed

    Mjejri, Issam; Doherty, Cara M; Rubio-Martinez, Marta; Drisko, Glenna L; Rougier, Aline

    2017-11-22

    Devices displaying controllably tunable optical properties through an applied voltage are attractive for smart glass, mirrors, and displays. Electrochromic material development aims to decrease power consumption while increasing the variety of attainable colors, their brilliance, and their longevity. We report the first electrochromic device constructed from metal organic frameworks (MOFs). Two MOF films, HKUST-1 and ZnMOF-74, are assembled so that the oxidation of one corresponds to the reduction of the other, allowing the two sides of the device to simultaneously change color. These MOF films exhibit cycling stability unrivaled by other MOFs and a significant optical contrast in a lithium-based electrolyte. HKUST-1 reversibly changed from bright blue to light blue and ZnMOF-74 from yellow to brown. The electrochromic device associates the two MOF films via a PMMA-lithium based electrolyte membrane. The color-switching of these MOFs does not arise from an organic-linker redox reaction, signaling unexplored possibilities for electrochromic MOF-based materials.

  1. Fabrication of 1-dimension nano-material-based device and its electrical characteristics

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong; Zhang, Min

    2008-12-01

    In recent years, many kinds of 1-dimension nano-materials (Carbon nanotube, ZnO nanobelt and nanowire etc.) continue to emerge which exhibit distinct and unique electromechanical, piezoelectric, photoelectrical properties. In this paper, a 1-dimension nano-materials-based device was proposed. The bottom-up and top-down combined process were used for constructing CNT-array-based device and ZnO nanowire device. The electrical characteristics of the 1D nano-materials-based devices were also investigated. The measurement results of electrical characteristics demonstrate that it is ohm electrical contact behavior between the nano-material and micro-electrodes in the proposed device which also have the field effect. The proposed 1D nano-material-based device shows the application potential in the sensing fields.

  2. Enhanced thermoelectric performance of graphene nanoribbon-based devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hossain, Md Sharafat, E-mail: hossain@student.unimelb.edu.au; Huynh, Duc Hau; Nguyen, Phuong Duc

    There have been numerous theoretical studies on exciting thermoelectric properties of graphene nano-ribbons (GNRs); however, most of these studies are mainly based on simulations. In this work, we measure and characterize the thermoelectric properties of GNRs and compare the results with theoretical predictions. Our experimental results verify that nano-structuring and patterning graphene into nano-ribbons significantly enhance its thermoelectric power, confirming previous predictions. Although patterning results in lower conductance (G), the overall power factor (S{sup 2}G) increases for nanoribbons. We demonstrate that edge roughness plays an important role in achieving such an enhanced performance and support it through first principles simulations.more » We show that uncontrolled edge roughness, which is considered detrimental in GNR-based electronic devices, leads to enhanced thermoelectric performance of GNR-based thermoelectric devices. The result validates previously reported theoretical studies of GNRs and demonstrates the potential of GNRs for the realization of highly efficient thermoelectric devices.« less

  3. Electroluminescence of a polythiophene molecular wire suspended between a metallic surface and the tip of a scanning tunneling microscope.

    PubMed

    Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Dappe, Yannick J; Mathevet, Fabrice; Schull, Guillaume

    2014-01-31

    The electroluminescence of a polythiophene wire suspended between a metallic surface and the tip of a scanning tunneling microscope is reported. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.

  4. Microfluidic White Organic Light-Emitting Diode Based on Integrated Patterns of Greenish-Blue and Yellow Solvent-Free Liquid Emitters

    NASA Astrophysics Data System (ADS)

    Kobayashi, Naofumi; Kasahara, Takashi; Edura, Tomohiko; Oshima, Juro; Ishimatsu, Ryoichi; Tsuwaki, Miho; Imato, Toshihiko; Shoji, Shuichi; Mizuno, Jun

    2015-10-01

    We demonstrated a novel microfluidic white organic light-emitting diode (microfluidic WOLED) based on integrated sub-100-μm-wide microchannels. Single-μm-thick SU-8-based microchannels, which were sandwiched between indium tin oxide (ITO) anode and cathode pairs, were fabricated by photolithography and heterogeneous bonding technologies. 1-Pyrenebutyric acid 2-ethylhexyl ester (PLQ) was used as a solvent-free greenish-blue liquid emitter, while 2,8-di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene (TBRb)-doped PLQ was applied as a yellow liquid emitter. In order to form the liquid white light-emitting layer, the greenish-blue and yellow liquid emitters were alternately injected into the integrated microchannels. The fabricated electro-microfluidic device successfully exhibited white electroluminescence (EL) emission via simultaneous greenish-blue and yellow emissions under an applied voltage of 100 V. A white emission with Commission Internationale de l’Declairage (CIE) color coordinates of (0.40, 0.42) was also obtained; the emission corresponds to warm-white light. The proposed device has potential applications in subpixels of liquid-based microdisplays and for lighting.

  5. Pattern visual evoked potentials elicited by organic electroluminescence screen.

    PubMed

    Matsumoto, Celso Soiti; Shinoda, Kei; Matsumoto, Harue; Funada, Hideaki; Sasaki, Kakeru; Minoda, Haruka; Iwata, Takeshi; Mizota, Atsushi

    2014-01-01

    To determine whether organic electroluminescence (OLED) screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs). Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA) screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan) screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years). The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT) screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  6. GNSS Wristwatch Device for Networked Operations Supporting Location Based Services

    DTIC Science & Technology

    2008-09-01

    Coordinates, Volume 4, Issue 9, Sep 2008 GNSS WRISTWATCH DEVICE FOR NETWORKED OPERATIONS SUPPORTING LOCATION BASED SERVICES Alison Brown...TITLE AND SUBTITLE GNSS Wristwatch Device for Networked Operations Supporting Location Based Services 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c...LocatorNet Portal also supports Location Based Services (LBS) based on the TIDGET solution data using an Oracle Mapping Server with an open architecture

  7. Unconventional supercapacitors from nanocarbon-based electrode materials to device configurations.

    PubMed

    Liu, Lili; Niu, Zhiqiang; Chen, Jun

    2016-07-25

    As energy storage devices, supercapacitors that are also called electrochemical capacitors possess high power density, excellent reversibility and long cycle life. The recent boom in electronic devices with different functions in transparent LED displays, stretchable electronic systems and artificial skin has increased the demand for supercapacitors to move towards light, thin, integrated macro- and micro-devices with transparent, flexible, stretchable, compressible and/or wearable abilities. The successful fabrication of such supercapacitors depends mainly on the preparation of innovative electrode materials and the design of unconventional supercapacitor configurations. Tremendous research efforts have been recently made to design and construct innovative nanocarbon-based electrode materials and supercapacitors with unconventional configurations. We review here recent developments in supercapacitors from nanocarbon-based electrode materials to device configurations. The advances in nanocarbon-based electrode materials mainly include the assembly technologies of macroscopic nanostructured electrodes with different dimensions of carbon nanotubes/nanofibers, graphene, mesoporous carbon, activated carbon, and their composites. The electrodes with macroscopic nanostructured carbon-based materials overcome the issues of low conductivity, poor mechanical properties, and limited dimensions that are faced by conventional methods. The configurational design of advanced supercapacitor devices is presented with six types of unconventional supercapacitor devices: flexible, micro-, stretchable, compressible, transparent and fiber supercapacitors. Such supercapacitors display unique configurations and excellent electrochemical performance at different states such as bending, stretching, compressing and/or folding. For example, all-solid-state simplified supercapacitors that are based on nanostructured graphene composite paper are able to maintain 95% of the original capacity at

  8. Topological Material-Based Spin Devices

    NASA Astrophysics Data System (ADS)

    Zhang, Minhao; Wang, Xuefeng

    Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

  9. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    PubMed

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  10. Design of an SolidWorks-based household substrate cultivation device

    NASA Astrophysics Data System (ADS)

    Yi, Guo; Yueying, Wang

    2018-03-01

    Rapid urbanization has caused increasingly severe environmental problems and smaller tillable land area. Even worse, negative reports on vegetable production are repeatedly found. In this case, home gardening has become an inexorable trend. To meet demand for vegetable cultivation in the home environment, an SolidWorks-based household substrate cultivation device has been designed. This device is composed of the cultivation tank, upright post, base, irrigation system, supplemental lighting system and control system. The household substrate cultivation device manufactured based on the design results has shown in practice that this device features an esthetic appearance, low cost, automatic irrigation and lighting supplementation, good vegetable growing conditions, full of ornamental value and practicability and thus is suitable for vegetable growing in the home environment. Hence it has a higher promotion value in the home gardening field.

  11. Proton irradiation effects on gallium nitride-based devices

    NASA Astrophysics Data System (ADS)

    Karmarkar, Aditya P.

    Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

  12. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Jian; Turner, Eric

    Iridium compounds and their uses are disclosed herein. For example, carbazole containing iridium compounds are disclosed. The compounds are useful in many devices, including, but not limited to, electroluminescent devices.

  13. Fiber Bragg grating based arterial localization device

    NASA Astrophysics Data System (ADS)

    Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

    2017-06-01

    A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

  14. A chiral-based magnetic memory device without a permanent magnet

    PubMed Central

    Dor, Oren Ben; Yochelis, Shira; Mathew, Shinto P.; Naaman, Ron; Paltiel, Yossi

    2013-01-01

    Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices. PMID:23922081

  15. A chiral-based magnetic memory device without a permanent magnet.

    PubMed

    Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

    2013-01-01

    Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

  16. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

    PubMed

    Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

    2016-09-27

    Direct band electroluminescence (EL) from tensile-strained Si 0.13 Ge 0.87 /Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300-1400 nm and 1600-1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL ( L ) and injection current density ( J ) with L ~ J m shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures.

  17. Polarized micro-cavity organic light-emitting devices.

    PubMed

    Park, Byoungchoo; Kim, Mina; Park, Chan Hyuk

    2009-04-27

    We present the results of a study of light emissions from a polarized micro-cavity Organic Light-Emitting Device (OLED), which consisted of a flexible, anisotropic one-dimensional (1-D) photonic crystal (PC) film substrate. It is shown that luminous Electroluminescent (EL) emissions from the polarized micro-cavity OLED were produced at relatively low operating voltages. It was also found that the peak wavelengths of the emitted EL light corresponded to the two split eigen modes of the high-energy band edges of the anisotropic PC film, with a strong dependence on the polarization state of the emitting light. For polarization along the ordinary axis of the anisotropic PC film, the optical split micro-cavity modes occurred at the longer high-energy photonic band gap (PBG) edge, while for polarization along the extraordinary axis, the split micro-cavity modes occurred at the shorter high-energy PBG edge, with narrow bandwidths. We demonstrated that the polarization and emission mode of the micro-cavity OLED may be selected by choosing the appropriate optical axis of the anisotropic 1-D PC film.

  18. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  19. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    PubMed Central

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  20. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

    NASA Astrophysics Data System (ADS)

    Zhou, Yiyin; Dou, Wei; Du, Wei; Pham, Thach; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Mosleh, Aboozar; Alher, Murtadha; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed; Yu, Shui-Qing

    2016-07-01

    Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge double heterostructures (DHS) that were grown directly on a Si substrate via a chemical vapor deposition system. Both photoluminescence and electroluminescence spectra have been characterized at temperatures from 300 to 77 K. Based on our theoretical calculation, all GeSn alloys in this study are indirect bandgap materials. However, due to the small energy separation between direct and indirect bandgap, and the fact that radiative recombination rate greater than non-radiative, the emissions are mainly from the direct Γ-valley to valence band transitions. The electroluminescence emissions under current injection levels from 102 to 357 A/cm2 were investigated at 300 K. The monotonic increase of the integrated electroluminescence intensity was observed for each sample. Moreover, the electronic band structures of the DHS were discussed. Despite the indirect GeSn bandgap owing to the compressive strain, type-I band alignment was achieved with the barrier heights ranging from 11 to 47 meV.

  1. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  2. Intense deep-blue electroluminescence from ITO/Y₂O₃/Ag structure.

    PubMed

    Yin, Xue; Wang, Shenwei; Li, Ling; Mu, Guangyao; Tang, Ying; Duan, Wubiao; Yi, Lixin

    2015-07-13

    ITO/Y₂O₃/Ag devices were fabricated using Y₂O₃ films as insulator. Four intense and sharp lines with half-peak width of 4 nm were observed for the 293.78 nm InI, 316.10 nm InI, 444.82 nm InII and 403.07 nm InIII transitions. Luminescence mechanism was illustrated by cross-section of the devices based on the analysis of surface morphology. Under the action of strong electric field, the loss of K-shell electrons led to the occurrence of characteristic radiation of indium ions. In addition, the device with turn-on voltage of 10V demonstrates typical I-V diode characteristics. Moreover, Y₂O₃/In₂O₃ multiple films as the insulation layer instead of single Y₂O₃ films was found to improve the device performance with excellent CIE (x, y) coordinates (0.16, 0.03).

  3. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    NASA Astrophysics Data System (ADS)

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; Nie, Wanyi; Mohite, Aditya D.; Ruden, P. Paul; Smith, Darryl L.

    2014-12-01

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solution using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. To validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. These observations are consistent with the model.

  4. Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements

    DOE PAGES

    Liu, Feilong; Kelley, Megan R.; Crooker, Scott A.; ...

    2014-12-22

    The effect of a magnetic field on the electroluminescence of organic light emitting devices originates from the hyperfine interaction between the electron/hole polarons and the hydrogen nuclei of the host molecules. In this paper, we present an analytical theory of magnetoelectroluminescence for organic semiconductors. To be specific, we focus on bilayer heterostructure devices. In the case we are considering, light generation at the interface of the donor and acceptor layers results from the formation and recombination of exciplexes. The spin physics is described by a stochastic Liouville equation for the electron/hole spin density matrix. By finding the steady-state analytical solutionmore » using Bloch-Wangsness-Redfield theory, we explore how the singlet/triplet exciplex ratio is affected by the hyperfine interaction strength and by the external magnetic field. In order to validate the theory, spectrally resolved electroluminescence experiments on BPhen/m-MTDATA devices are analyzed. With increasing emission wavelength, the width of the magnetic field modulation curve of the electroluminescence increases while its depth decreases. Furthermore, these observations are consistent with the model.« less

  5. Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Nguyen, Van-Cao; Katsuki, Hiroyuki; Sasaki, Fumio; Yanagi, Hisao

    2018-04-01

    In this study, electroluminescence from single crystals of CH3NH3PbBr3 perovskite is explored. The cast capping method was applied to fabricate simple devices with an ITO/CH3NH3PbBr3/ITO structure. The devices showed a low operation voltage of 2 V and a pure green luminescence with full width at half maximum of ∼20 nm. However, the emission occurring at the crystal edges demonstrated blinking with a subsecond time interval, which is similar to the previously reported photoluminescence behavior of nanocrystal perovskites. This electroluminescence blinking may provide new insight into the recombination processes depending on the carrier traps and defects of emission layers in perovskite light-emitting devices.

  6. Formal verification of software-based medical devices considering medical guidelines.

    PubMed

    Daw, Zamira; Cleaveland, Rance; Vetter, Marcus

    2014-01-01

    Software-based devices have increasingly become an important part of several clinical scenarios. Due to their critical impact on human life, medical devices have very strict safety requirements. It is therefore necessary to apply verification methods to ensure that the safety requirements are met. Verification of software-based devices is commonly limited to the verification of their internal elements without considering the interaction that these elements have with other devices as well as the application environment in which they are used. Medical guidelines define clinical procedures, which contain the necessary information to completely verify medical devices. The objective of this work was to incorporate medical guidelines into the verification process in order to increase the reliability of the software-based medical devices. Medical devices are developed using the model-driven method deterministic models for signal processing of embedded systems (DMOSES). This method uses unified modeling language (UML) models as a basis for the development of medical devices. The UML activity diagram is used to describe medical guidelines as workflows. The functionality of the medical devices is abstracted as a set of actions that is modeled within these workflows. In this paper, the UML models are verified using the UPPAAL model-checker. For this purpose, a formalization approach for the UML models using timed automaton (TA) is presented. A set of requirements is verified by the proposed approach for the navigation-guided biopsy. This shows the capability for identifying errors or optimization points both in the workflow and in the system design of the navigation device. In addition to the above, an open source eclipse plug-in was developed for the automated transformation of UML models into TA models that are automatically verified using UPPAAL. The proposed method enables developers to model medical devices and their clinical environment using clinical workflows as one

  7. Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

    NASA Astrophysics Data System (ADS)

    Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

    2014-10-01

    Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

  8. Photonic crystal active and passive device components in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Sabarinathan, Jayshri

    Photonic crystals (PC's) are emerging as potentially important candidates in propelling the development in planar photonic integrated circuits, high capacity optical fibers and nanoscopic lasers. Photonic crystals are expected to play a role analogous to that played by crystalline semiconductors in the development of electronic circuits. What makes these photonic crystals more interesting is that introducing "defects"---a missing period or phase slip, in the PC lattice introduces defect modes that lie within the bandgap of the PC. In this investigation, both two dimensional and three dimensional photonic crystals have been fabricated and studied using III-V compound semiconductors which are presently the most useful material systems for integrating with existing optoelectronic technology. A novel single step epitaxial technique to fabricate GaAs-based 3D photonic crystals with sub-micron feature size has been developed employing MBE growth on patterned substrates, ebeam and optical lithography, and lateral wet oxidation of AlGaAs. Transmission characteristics of the fabricated 3D PCs have been measured revealing a 10dB stopband centered at 1 mum for the smallest feature sizes. Electrically injected 2D photonic crystal defect microcavities were designed and fabricated to realize low threshold vertically emitting light sources. The electroluminescent devices were fabricated with GaAs- and InP-based quantum wells heterostructures with emission wavelengths at 0.94mum and 1.55 mum respectively. The light-current, spectral, near- and far-field characteristics of these devices have been studied in detail. The processing and high-aspect ratio etch techniques were carefully developed to create the 2D PCs embedded in the electrically injected apertures. Quantum dots with emission wavelength of 1.04 mum were incorporated into electrically injected 2D PC microcavities to study the electrical and optical confinement simultaneously provided in this configuration. Weak

  9. Electrorheological Fluid Based Force Feedback Device

    NASA Technical Reports Server (NTRS)

    Pfeiffer, Charles; Bar-Cohen, Yoseph; Mavroidis, Constantinos; Dolgin, Benjamin

    1999-01-01

    Parallel to the efforts to develop fully autonomous robots, it is increasingly being realized that there are applications where it is essential to have a fully controlled robot and "feel" its operating conditions, i.e. telepresence. This trend is a result of the increasing efforts to address tasks where humans can perform significantly better but, due to associated hazards, distance, physical limitations and other causes, only robots can be employed to perform these tasks. Such robots need to be assisted by a human that remotely controls the operation. To address the goal of operating robots as human surrogates, the authors launched a study of mechanisms that provide mechanical feedback. For this purpose, electrorheological fluids (ERF) are being investigated for the potential application as miniature haptic devices. This family of electroactive fluids has the property of changing the viscosity during electrical stimulation. Consequently, ERF can be used to produce force feedback haptic devices for tele-operated control of medical and space robotic systems. Forces applied at the robot end-effector due to a compliant environment are reflected to the user using an ERF device where a change in the system viscosity will occur proportionally to the transmitted force. Analytical model and control algorithms are being developed taking into account the non-linearities of these type of devices. This paper will describe the concept and the developed mechanism of ERF based force feedback. The test process and the physical properties of this device will be described and the results of preliminary tests will be presented.

  10. Investigation of the Degradation Mechanisms of a Variety of Organic Photovoltaic Devices by Combination of Imaging Techniques - The ISOS-3 Inter-Laboratory Collaboration

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rosch, R.; Tanenbaum, D. M.; Jrgensen, M.

    2012-04-01

    The investigation of degradation of seven distinct sets (with a number of individual cells of n {>=} 12) of state of the art organic photovoltaic devices prepared by leading research laboratories with a combination of imaging methods is reported. All devices have been shipped to and degraded at Riso DTU up to 1830 hours in accordance with established ISOS-3 protocols under defined illumination conditions. Imaging of device function at different stages of degradation was performed by laser-beam induced current (LBIC) scanning; luminescence imaging, specifically photoluminescence (PLI) and electroluminescence (ELI); as well as by lock-in thermography (LIT). Each of the imagingmore » techniques exhibits its specific advantages with respect to sensing certain degradation features, which will be compared and discussed here in detail. As a consequence, a combination of several imaging techniques yields very conclusive information about the degradation processes controlling device function. The large variety of device architectures in turn enables valuable progress in the proper interpretation of imaging results -- hence revealing the benefits of this large scale cooperation in making a step forward in the understanding of organic solar cell aging and its interpretation by state-of-the-art imaging methods.« less

  11. Investigation of the Degradation Mechanisms of a Variety of Organic Photovoltaic Devices by Combination of Imaging Techniques—the ISOS-3Inter-laboratory Collaboration

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Germack D.; Rosch, R.; Tanenbaum, D.M.

    2012-04-01

    The investigation of degradation of seven distinct sets (with a number of individual cells of n {ge} 12) of state of the art organic photovoltaic devices prepared by leading research laboratories with a combination of imaging methods is reported. All devices have been shipped to and degraded at Risoe DTU up to 1830 hours in accordance with established ISOS-3 protocols under defined illumination conditions. Imaging of device function at different stages of degradation was performed by laser-beam induced current (LBIC) scanning; luminescence imaging, specifically photoluminescence (PLI) and electroluminescence (ELI); as well as by lock-in thermography (LIT). Each of the imagingmore » techniques exhibits its specific advantages with respect to sensing certain degradation features, which will be compared and discussed here in detail. As a consequence, a combination of several imaging techniques yields very conclusive information about the degradation processes controlling device function. The large variety of device architectures in turn enables valuable progress in the proper interpretation of imaging results - hence revealing the benefits of this large scale cooperation in making a step forward in the understanding of organic solar cell aging and its interpretation by state-of-the-art imaging methods.« less

  12. Pattern Visual Evoked Potentials Elicited by Organic Electroluminescence Screen

    PubMed Central

    Matsumoto, Celso Soiti; Shinoda, Kei; Matsumoto, Harue; Funada, Hideaki; Minoda, Haruka

    2014-01-01

    Purpose. To determine whether organic electroluminescence (OLED) screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs). Method. Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA) screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan) screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years). Results. The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT) screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. Conclusion. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account. PMID:25197652

  13. Exciplex emission and decay of co-deposited 4,4',4″-tris[3-methylphenyl(phenyl)amino]triphenylamine:tris-[3-(3-pyridyl)mesityl]borane organic light-emitting devices with different electron transporting layer thicknesses

    NASA Astrophysics Data System (ADS)

    Huang, Qingyu; Zhao, Suling; Xu, Zheng; Fan, Xing; Shen, Chongyu; Yang, Qianqian

    2014-04-01

    Highly efficient fluorescence organic light-emitting diodes (OLEDs) based on the mixed 4,4',4″-tris[3-methylphenyl(phenyl)amino]triphenylamine:tris-[3-(3-pyridyl)mesityl]borane (1:1) system are reported. The electroluminescence due to the exciplex emission is red shifted when the thickness of the electron-transporting layer increases. The prepared OLEDs achieve a low turn-on voltage of 2.1 V, a high current efficiency of 36.79 cd/A, and a very high luminescence of 17 100 cd/m2, as well as a low efficiency roll-off. The current efficiency of the optimized OLED is maintained at more than 28.33 cd/A up to 10 000 cd m-2. The detailed recombination mechanism of the prepared OLEDs is investigated by the transient electroluminescence method. It is concluded that there are no contributions from trapped charges and annihilations of triplet-triplet excitons to the detected electroluminescence.

  14. Qualification and Approval of Personal Computer-Based Aviation Training Devices

    DOT National Transportation Integrated Search

    1997-05-12

    This Advisory Circular (AC) provides information and guidance to potential training device manufacturers and aviation training consumers concerning a means, acceptable to the Administrator, by which personal computer-based aviation training devices (...

  15. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    PubMed Central

    Kamminga, Jacob; Le, Duc; Havinga, Paul

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and suffer from uncertain input latencies. This uncertainty makes accurate localization challenging. Therefore, we present a collaborative localization algorithm (Cooperative Localization on Android with ambient Sound Sources (CLASS)) that simultaneously localizes the position of indeterministic devices and ambient sound sources without local infrastructure. The CLASS algorithm deals with the uncertainty by splitting the devices into subsets so that outliers can be removed from the time difference of arrival values and localization results. Since Android is indeterministic, we select Android devices to evaluate our approach. The algorithm is evaluated with an outdoor experiment and achieves a mean Root Mean Square Error (RMSE) of 2.18 m with a standard deviation of 0.22 m. Estimated directions towards the sound sources have a mean RMSE of 17.5° and a standard deviation of 2.3°. These results show that it is feasible to simultaneously achieve a relative positioning of both devices and sound sources with sufficient accuracy, even when using non-deterministic devices and platforms, such as Android. PMID:27649176

  16. Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells

    NASA Astrophysics Data System (ADS)

    Aeberhard, Urs; Rau, Uwe

    2017-06-01

    The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions. Its derivation is based on detailed balance relations between local absorption and emission rates in optically isotropic media with nondegenerate quasiequilibrium carrier distributions. In many cases, the dependence of density and spatial variation of electronic and optical device states on the point of operation is modest and the reciprocity relation holds. In nanostructure-based photovoltaic devices exploiting confined modes, however, the underlying assumptions are no longer justifiable. In the case of ultrathin absorber solar cells, the modification of the electronic structure with applied bias is significant due to the large variation of the built-in field. Straightforward use of the external quantum efficiency as measured at short circuit conditions in the photovoltaic reciprocity theory thus fails to reproduce the electroluminescence spectrum at large forward bias voltage. This failure is demonstrated here by numerical simulation of both spectral quantities at normal incidence and emission for an ultrathin GaAs p -i -n solar cell using an advanced quantum kinetic formalism based on nonequilibrium Green's functions of coupled photons and charge carriers. While coinciding with the semiclassical relations under the conditions of their validity, the theory provides a consistent microscopic relationship between absorption, emission, and charge carrier transport in photovoltaic devices at arbitrary operating conditions and for any shape of optical and electronic density of states.

  17. Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells.

    PubMed

    Aeberhard, Urs; Rau, Uwe

    2017-06-16

    The photovoltaic reciprocity theory relates the electroluminescence spectrum of a solar cell under applied bias to the external photovoltaic quantum efficiency of the device as measured at short circuit conditions. Its derivation is based on detailed balance relations between local absorption and emission rates in optically isotropic media with nondegenerate quasiequilibrium carrier distributions. In many cases, the dependence of density and spatial variation of electronic and optical device states on the point of operation is modest and the reciprocity relation holds. In nanostructure-based photovoltaic devices exploiting confined modes, however, the underlying assumptions are no longer justifiable. In the case of ultrathin absorber solar cells, the modification of the electronic structure with applied bias is significant due to the large variation of the built-in field. Straightforward use of the external quantum efficiency as measured at short circuit conditions in the photovoltaic reciprocity theory thus fails to reproduce the electroluminescence spectrum at large forward bias voltage. This failure is demonstrated here by numerical simulation of both spectral quantities at normal incidence and emission for an ultrathin GaAs p-i-n solar cell using an advanced quantum kinetic formalism based on nonequilibrium Green's functions of coupled photons and charge carriers. While coinciding with the semiclassical relations under the conditions of their validity, the theory provides a consistent microscopic relationship between absorption, emission, and charge carrier transport in photovoltaic devices at arbitrary operating conditions and for any shape of optical and electronic density of states.

  18. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    PubMed Central

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-01-01

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics. PMID:24232455

  19. Game theory-based mode cooperative selection mechanism for device-to-device visible light communication

    NASA Astrophysics Data System (ADS)

    Liu, Yuxin; Huang, Zhitong; Li, Wei; Ji, Yuefeng

    2016-03-01

    Various patterns of device-to-device (D2D) communication, from Bluetooth to Wi-Fi Direct, are emerging due to the increasing requirements of information sharing between mobile terminals. This paper presents an innovative pattern named device-to-device visible light communication (D2D-VLC) to alleviate the growing traffic problem. However, the occlusion problem is a difficulty in D2D-VLC. This paper proposes a game theory-based solution in which the best-response dynamics and best-response strategies are used to realize a mode-cooperative selection mechanism. This mechanism uses system capacity as the utility function to optimize system performance and selects the optimal communication mode for each active user from three candidate modes. Moreover, the simulation and experimental results show that the mechanism can attain a significant improvement in terms of effectiveness and energy saving compared with the cases where the users communicate via only the fixed transceivers (light-emitting diode and photo diode) or via only D2D.

  20. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    PubMed

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  1. A Bluetooth-Based Device Management Platform for Smart Sensor Environment

    NASA Astrophysics Data System (ADS)

    Lim, Ivan Boon-Kiat; Yow, Kin Choong

    In this paper, we propose the use of Bluetooth as the device management platform for the various embedded sensors and actuators in an ambient intelligent environment. We demonstrate the ease of adding Bluetooth capability to common sensor circuits (e.g. motion sensor circuit based on a pyroelectric infrared (PIR) sensor). A central logic application is proposed which controls the operation of controller devices, based on values returned by sensors via Bluetooth. The operation of devices depends on rules that are learnt from user behavior using an Elman recurrent neural network. Overall, Bluetooth has shown its potential in being used as a device management platform in an ambient intelligent environment, which allows sensors and controllers to be deployed even in locations where power sources are not readily available, by using battery power.

  2. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    PubMed Central

    Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

    2016-01-01

    Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L) and injection current density (J) with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures. PMID:28773923

  3. Regulatory science based approach in development of novel medical devices.

    PubMed

    Sakuma, Ichiro

    2015-08-01

    For development rational evaluation method for medical devices' safety and efficacy, regulatory science studies are important. Studies on regulatory affairs related to a medical device under development should be conducted as well as its technological development. Clinical performance of a medical device is influenced by performance of the device, medical doctors' skill, pathological condition of a patient, and so on. Thus it is sometimes difficult to demonstrate superiority of the device in terms of clinical outcome although its efficacy as a medical device is accepted. Setting of appropriate end points is required to evaluate a medical device appropriately. Risk assessment and risk management are the basis of medical device safety assurance. In case of medical device software, there are difficulties in identifying the risk due to its complexity of user environment and different design and manufacturing procedure compared with conventional hardware based medical devices. Recent technological advancement such as information and communication technologies (ICT) for medical devices and wireless network has raised new issue on risk management: cybersecurity. We have to watch closely the progress of safety standard development.

  4. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Meng, Lei

    significantly improved compared with cells made with organic layers. Degradation mechanisms were investigated and important guidelines were derived for future device design with a view to achieving both highly efficient and stable solar devices. Organometal halide based perovskite material has great optoelectronic proprieties, for example, shallow traps, benign grain boundaries and high diffusion length. The perovskite LEDs show pure electroluminescence (EL) with narrow full width at half maximum (FWHM), which is an advantage for display, lighting or lasing applications. In chapter five, perovskite LEDs are demonstrated employing solution processed charge injection layers with a quantum efficiency of 1.16% with a very low driving voltage.

  5. Characteristics of electroluminescence phenomenon in virgin and thermally aged LDPE

    NASA Astrophysics Data System (ADS)

    Bani, N. A.; Abdul-Malek, Z.; Ahmad, H.; Muhammad-Sukki, F.; Mas'ud, A. A.

    2015-08-01

    High voltage cable requires a good insulating material such as low density polyethylene (LDPE) to be able to operate efficiently in high voltage stresses and high temperature environment. However, any polymeric material will experience degradation after prolonged application of high electrical stresses or other extreme conditions. The continuous degradation will shorten the life of a cable therefore further understanding on the behaviour of the aged high voltage cable needs to be undertaken. This may be observed through electroluminescence (EL) measurement. EL occurs when a solid-state material is subjected to a high electrical field stress and associated with the generation of charge carriers within the polymeric material and that these charges can be produced by injection, de-trapping and field-dissociation at the metal-polymer interface. The behaviour of EL emission can be affected by applied field, applied frequency, ageing time, ageing temperature and types of materials, among others. This paper focuses on the measurement of EL emission of additive-free LDPE thermally aged at different temperature subjected to varying electric stresses at 50Hz. It can be observed that EL emission increases as voltage applied is increased. However, EL emission decreases as ageing temperature is increased for varying applied voltage.

  6. Review on microfluidic paper-based analytical devices towards commercialisation.

    PubMed

    Akyazi, Tugce; Basabe-Desmonts, Lourdes; Benito-Lopez, Fernando

    2018-02-25

    Paper-based analytical devices introduce an innovative platform technology for fluid handling and analysis, with wide range of applications, promoting low cost, ease of fabrication/operation and equipment independence. This review gives a general overview on the fabrication techniques reported to date, revealing and discussing their weak points as well as the newest approaches in order to overtake current mass production limitations and therefore commercialisation. Moreover, this review aims especially to highlight novel technologies appearing in literature for the effective handling and controlling of fluids. The lack of flow control is the main problem of paper-based analytical devices, which generates obstacles for marketing and slows down the transition of paper devices from the laboratory into the consumers' hands. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Specifying Skill-Based Training Strategies and Devices: A Model Description

    DTIC Science & Technology

    1990-06-01

    Technical Report 897 Specifying Skill-Based Training N Strategies and Devices: A Model Description I Paui J. Sticha and Mark Schlager Human Resources...unlimied 90 ’ Technical Report 897 Specifying Skill-Based Training Strategies and Devices: A Model Description Paul J. Sticha and Mark Schlager Human...SECURITY CLASSIFICATION OF THIS PAGE Form Approved REPORT DOCUMENTATION PAGE FMNo o7 ote la. REPORT SECURITY CLASSIFICATION lb. RESTRICTWE MARKINGS

  8. Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

    NASA Astrophysics Data System (ADS)

    Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

    2015-12-01

    The Graphene-Base Heterojunction Transistor (GBHT) is a novel device concept with a high potential for analog high-frequency RF operation, in which the current is due to both thermionic emission and tunneling. In this paper we study through numerical simulations the influence of previously uninvestigated aspects of Si- and Ge-based GBHTs-namely, crystallographic orientation and doping density values-on the device performance; a comparison with an aggressively scaled HBT structure is then reported. The simulations are carried out with an in-house developed code based on a 1-D quantum transport model within the effective mass approximation and the assumptions of ballistic transport with non-parabolic corrections and ideal semiconductor-graphene interface. We show that crystallographic orientation has a negligible effect on the GBHT performance. The doping density values in the GBHT emitter and collector regions can be tailored to maximize the device performance: the Si device shows better overall performance than the Ge one, yielding a peak cut-off frequency fT higher than 4 THz together with an intrinsic voltage gain above 10, or even higher fT at the cost of a lower gain. The Si-based GBHT can potentially outperform the SiGe HBT by a 2.8 higher fT . For a Si-based GBHT with a circular active region of diameter 50-100 nm, a theoretical balanced value for fT and fmax above 2 THz can be achieved, provided the base parasitics are carefully minimized.

  9. Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

    PubMed Central

    Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

    2014-01-01

    In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

  10. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  11. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  12. Automatic Detection and Evaluation of Solar Cell Micro-Cracks in Electroluminescence Images Using Matched Filters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    A method for detecting micro-cracks in solar cells using two dimensional matched filters was developed, derived from the electroluminescence intensity profile of typical micro-cracks. We describe the image processing steps to obtain a binary map with the location of the micro-cracks. Finally, we show how to automatically estimate the total length of each micro-crack from these maps, and propose a method to identify severe types of micro-cracks, such as parallel, dendritic, and cracks with multiple orientations. With an optimized threshold parameter, the technique detects over 90 % of cracks larger than 3 cm in length. The method shows great potentialmore » for quantifying micro-crack damage after manufacturing or module transportation for the determination of a module quality criterion for cell cracking in photovoltaic modules.« less

  13. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-01

    We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  14. Experimental investigations of quantum confined silicon nanoparticle light emitting devices

    NASA Astrophysics Data System (ADS)

    Ligman, Rebekah Kristine

    2007-12-01

    As the demands on our world's energy resources continue to grow, alternative high efficiency materials such as quantum confined silicon nanoparticles (Si nps) are desirable for their potential low cost application in white light illumination, in optical displays, and in on-chip optical interconnects. Many fabrication and passivation techniques exist that produce Si nps with high photogenerated quantum yield. However, high electrically generated Si np quantum efficiency has eluded our society. Predominantly due to the lack of a stable surface passivation and a device fabrication technique that preserves the Si np optical properties. To amend these deficiencies, the passivation of nonthermal plasma fabricated Si nps with a surface oxide grown under UV exposure was first investigated. Control over the surface oxidized Si np (Si/SiO2) passivation growth was demonstrated and the optical stability of Si/SiO2 nps was suitable for demonstrating Si np electroluminescence (EL). Two approaches for constructing hybrid organic light emitting diode (OLED) devices around nonthermal plasma fabricated Si nps were then investigated. Multilayer devices, composed of a nonthermal plasma fabricated Si np layer embedded within an OLED, were first studied. However, no EL from Si nps was obtained using the multilayer device architecture due to poor control over the Si np film thickness. Single layer polymer(Si/SiO2) hybrid devices, composed of nps randomly dispersed within an extrinsic conductive polymer, were then studied and EL from Si/SiO2 nps was obtained. The hybrid device optical and electrical response was enhanced over the control devices, possibly due to morphology changes induced by the Si/SiO2 nps. The energy transfer (ET) processes in single layer polymer(Si/SiO 2) hybrid devices were then investigated by imposing known spatial separations between the intrinsic conductive polymers and Si/SiO2 nps. No measurable Si/SiO2 np emission was observed from the intrinsic hybrid devices

  15. Biomedical device prototype based on small scale hydrodynamic cavitation

    NASA Astrophysics Data System (ADS)

    Ghorbani, Morteza; Sozer, Canberk; Alcan, Gokhan; Unel, Mustafa; Ekici, Sinan; Uvet, Huseyin; Koşar, Ali

    2018-03-01

    This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH)). The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice) based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice) was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

  16. Creating compact and microscale features in paper-based devices by laser cutting.

    PubMed

    Mahmud, Md Almostasim; Blondeel, Eric J M; Kaddoura, Moufeed; MacDonald, Brendan D

    2016-11-14

    In this work we describe a fabrication method to create compact and microscale features in paper-based microfluidic devices using a CO 2 laser cutting/engraving machine. Using this method we are able to produce the smallest features with the narrowest barriers yet reported for paper-based microfluidic devices. The method uses foil backed paper as the base material and yields inexpensive paper-based devices capable of using small fluid sample volumes and thus small reagent volumes, which is also suitable for mass production. The laser parameters (power and laser head speed) were adjusted to minimize the width of hydrophobic barriers and we were able to create barriers with a width of 39 ± 15 μm that were capable of preventing cross-barrier bleeding. We generated channels with a width of 128 ± 30 μm, which we found to be the physical limit for small features in the chromatography paper we used. We demonstrate how miniaturizing of paper-based microfluidic devices enables eight tests on a single bioassay device using only 2 μL of sample fluid volume.

  17. FPGA-based sleep apnea screening device for home monitoring.

    PubMed

    Al-Ashmouny, K haledM; Hamed, Hisham M; Morsy, Ahmed A

    2006-01-01

    We present the hardware design of an FPGA-based portable device for home screening of sleep apnea syndromes. The device is simple to use, inexpensive, and uses only three signals, namely the nasal air flow and the thorax and abdomen effort signals. The device hardware stores data of overnight sleep on a Secure Digital card. At the clinic, the sleep specialist reads in the stored data and uses an algorithm for the detection and classification of sleep apnea. The device is fairly low-cost and may help spread the ability to diagnose more cases of sleep apnea. Most sleep apnea cases currently go undiagnosed because of cost and practicality limitations of overnight polysomnography at sleep labs.

  18. Measurement-device-independent entanglement-based quantum key distribution

    NASA Astrophysics Data System (ADS)

    Yang, Xiuqing; Wei, Kejin; Ma, Haiqiang; Sun, Shihai; Liu, Hongwei; Yin, Zhenqiang; Li, Zuohan; Lian, Shibin; Du, Yungang; Wu, Lingan

    2016-05-01

    We present a quantum key distribution protocol in a model in which the legitimate users gather statistics as in the measurement-device-independent entanglement witness to certify the sources and the measurement devices. We show that the task of measurement-device-independent quantum communication can be accomplished based on monogamy of entanglement, and it is fairly loss tolerate including source and detector flaws. We derive a tight bound for collective attacks on the Holevo information between the authorized parties and the eavesdropper. Then with this bound, the final secret key rate with the source flaws can be obtained. The results show that long-distance quantum cryptography over 144 km can be made secure using only standard threshold detectors.

  19. Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode.

    PubMed

    Ahn, Jaehui; Mastro, Michael A; Klein, Paul B; Hite, Jennifer K; Feigelson, Boris; Eddy, Charles R; Kim, Jihyun

    2011-10-24

    The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. © 2011 Optical Society of America

  20. Development of Smartphone based Optical Device

    NASA Astrophysics Data System (ADS)

    Jung, Youngkee

    Due to the economy of scale, smartphones are becoming more affordable while their computing powers are increasing dramatically every year. Here we propose a ubiquitous and portable instrument for analyte quantitation by utilizing the characteristics of typical smartphone imaging system and specific design of transducers for different applications. Three testbeds included in this work are: quantitative colorimetric analysis, ultra-low radiant flux detection, and portable spectrometer. As a proof-of-principle for each device, 3-D printed cradle and theoretical simulation with MATLAB have been implemented. First example utilizes the native CMOS camera with their respective RGB channel data and perform an analyte quantitation for typical lateral flow devices (LFD). Histogram analysis method has been employed to detect the analyte concentration and calibration results show good correlation between perceived color change and analyte concentration. The second example shows the possibility of using a conventional CMOS camera for pico Watt level photon flux detection. Since most of consumer grade CMOS cameras cannot detect this level of light intensity and their dark current are relatively higher, a new algorithm called NREA (Noise Reduction by Ensemble Averaging) algorithm was developed to effectively reduce the noise level and increase the SNR (signal to noise ratio). This technique is effective for bioanalytical assays that has lower flux intensity such as fluorescence and luminescence. As a proof-of-principle, we tested the device with Pseudomonas fluorescens M3A and achieved a limit of detection of high 10? CFU/ml. In addition to basic schematic of detection model, another experiment with a silicon photomultiplier (SiPM) has been studied for more sensitive light detectability. Based on both the laser experiment and tw bioluminescent experiments, named Pseudomonas fluorescens M3A and NanoLuc, we found that the miniSM based device has a superior ability than the

  1. Paper-Based Device for Rapid Visualization of NADH Based on Dissolution of Gold Nanoparticles.

    PubMed

    Liang, Pingping; Yu, Haixiang; Guntupalli, Bhargav; Xiao, Yi

    2015-07-15

    We describe a paper-based device that enables rapid and sensitive room-temperature detection of dihydronicotinamide adenine dinucleotide (NADH) via a colorimetric readout and demonstrate its value for monitoring NAD+-driven enzymatic reactions. Our system is based on NADH-mediated inhibition of gold nanoparticle (AuNPs) dissolution in a Au3+-cetyltrimethylammonium bromide (CTAB) solution. We fabricated a device consisting of a mixed cellulose ester paper featuring a wax-encircled, AuNP-coated film atop a cotton absorbent layer sandwiched between two plastic cover layers. In the absence of NADH, the Au3+-CTAB complex dissolves the AuNP layer completely, generating a white color in the test zone. In the presence of NADH, Au3+ is rapidly reduced to Au+, greatly decreasing the dissolution of AuNPs and yielding a red color that becomes stronger at increasing concentrations of NADH. This device exploits capillary force-assisted vertical diffusion, allowing us to apply a 25 μL sample to a surface-confined test zone to achieve a detection limit of 12.5 μM NADH. We used the enzyme glucose dehydrogenase as a model to demonstrate that our paper-based device can monitor NAD+-driven biochemical processes with and without selective dehydrogenase inhibitors by naked-eye observation within 4 min at room temperature in a small sample volume. We believe that our paper-based device could offer a valuable and low-cost analytical tool for monitoring NAD+-associated enzymatic reactions and screening for dehydrogenase inhibitors in a variety of testing contexts.

  2. Measurement of charge transport through organic semiconducting devices

    NASA Astrophysics Data System (ADS)

    Klenkler, Richard A.

    2007-12-01

    In this thesis, two important and unexplored areas of organic semiconductor device physics are investigated: The first area involves determining the effect of energy barriers and intermixing at the interfaces between hole transport layers (HTLs). This effect was discerned by first establishing a method of pressure-laminating successive solution coated HTLs to gether. It was found that in the range of 0.8--3.0 MPa a pressure-laminated interface between two identical HTLs causes no measurable perturbation to charge transport. By this method, 2 different HTLs can be sandwiched together to create a discrete interface, and by inserting a mixed HTL in the middle an intermixed interface between the 2 HTLs can be simulated. With these sandwiched devices, charge injection across discrete versus intermixed interfaces were compared using time-of-flight measurements. For the hole transport materials investigated, no perturbation to the overall charge transport was observed with the discrete interface, however in contrast the rate of charge transport was clearly reduced through the intermixed interface. The second area that was investigated pertains to the development of a bulk mobility measurement technique that has a higher resolution than existing methods. The approach that was used involved decoupling the charge carrier transient signal from the device charging circuit. With this approach, the RC time constant constraint that limits the resolution of existing methods is eliminated. The resulting method, termed the photoinduced electroluminescence (EL) mobility measurement technique, was then used to compare the electron mobility of the metal chelate, AlQ3 to that of the novel triazine material, BTB. Results showed that BTB demonstrated an order of magnitude higher mobility than AlQ3. Overall, these findings have broad implications regarding device design. The pressure-lamination method could be used, e.g., as a diagnostic tool to help in the design of multilayer xerographic

  3. Strain-Engineering of Graphene Based Topological Quantum Devices

    NASA Astrophysics Data System (ADS)

    Diniz, Ginetom S.; Guassi, Marcos R.; Qu, Fanyao

    2015-03-01

    We have investigated the spin-charge transport in quantum devices based on graphene nanoribbons (GNR). Our calculation is based on the surface Green's function technique, considering the presence of an uniform uniaxial strain, spin-orbit interactions (SOIs), exchange field and a smooth staggered potential. We propose the use of uniaxial strain as an efficient mechanism to tune the conductance profiles of GNR with different edge terminations. Our results show that distinct behaviors can be achieved: for armchair GNR there is a complete suppression of the conductance close to the Fermi level with the formation of a band gap that depends on the direction and strength of the strain deformation, while for zigzag GNR there is only a small conductance suppression. We also discuss the effects of SOIs and the appearance of spin-resolved conductance oscillations, and the local density of states of these GNR devices in the quantum anomalous Hall regime. Furthermore, we demonstrate that the local density of states show that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be probed by scanning tunneling microscope. Our findings can be potentially used in novel GNR based topological quantum devices. Supported by FAP-DF, CNPq and CAPES.

  4. Comparison of dye doping and ultrathin emissive layer in white organic light-emitting devices with dual emissive layers

    NASA Astrophysics Data System (ADS)

    Wang, Xu; Qi, Yige; Yu, Junsheng

    2014-09-01

    White organic light-emitting devices (WOLEDs) with combined doping emissive layer (EML) and ultrathin EML have been fabricated to investigate the effect of each EML on the electroluminescent (EL) performance of the WOLEDs. Through tailoring doping concentration of bis[(4,6-difluorophenyl)-pyridinato-N,C2'](picolinate) iridium(III) (FIrpic) and thickness of ultrathin bis[2-(4-tertbutylphenyl)benzothiazolato-N,C2'] iridium (acetylacetonate) [(tbt)2Ir(acac)] EML, it is found that the change in the doping ratio of FIrpic significantly influenced the EL efficiencies and spectra, while the alteration of ultrathin EML thickness had much milder effect on the EL performance. The results indicated that ultrathin EML is in favor of reproducibility in mass production compared with doping method.

  5. Illusion thermal device based on material with constant anisotropic thermal conductivity for location camouflage

    NASA Astrophysics Data System (ADS)

    Hou, Quanwen; Zhao, Xiaopeng; Meng, Tong; Liu, Cunliang

    2016-09-01

    Thermal metamaterials and devices based on transformation thermodynamics often require materials with anisotropic and inhomogeneous thermal conductivities. In this study, still based on the concept of transformation thermodynamics, we designed a planar illusion thermal device, which can delocalize a heat source in the device such that the temperature profile outside the device appears to be produced by a virtual source at another position. This device can be constructed by only one kind of material with constant anisotropic thermal conductivity. The condition which should be satisfied by the device is provided, and the required anisotropic thermal conductivity is then deduced theoretically. This study may be useful for the designs of metamaterials or devices since materials with constant anisotropic parameters have great facility in fabrication. A prototype device has been fabricated based on a composite composed by two naturally occurring materials. The experimental results validate the effectiveness of the device.

  6. Development of induction current acquisition device based on ARM

    NASA Astrophysics Data System (ADS)

    Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

    2018-03-01

    We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

  7. Radiative efficiency of lead iodide based perovskite solar cells

    PubMed Central

    Tvingstedt, Kristofer; Malinkiewicz, Olga; Baumann, Andreas; Deibel, Carsten; Snaith, Henry J.; Dyakonov, Vladimir; Bolink, Henk J.

    2014-01-01

    The maximum efficiency of any solar cell can be evaluated in terms of its corresponding ability to emit light. We herein determine the important figure of merit of radiative efficiency for Methylammonium Lead Iodide perovskite solar cells and, to put in context, relate it to an organic photovoltaic (OPV) model device. We evaluate the reciprocity relation between electroluminescence and photovoltaic quantum efficiency and conclude that the emission from the perovskite devices is dominated by a sharp band-to-band transition that has a radiative efficiency much higher than that of an average OPV device. As a consequence, the perovskite have the benefit of retaining an open circuit voltage ~0.14 V closer to its radiative limit than the OPV cell. Additionally, and in contrast to OPVs, we show that the photoluminescence of the perovskite solar cell is substantially quenched under short circuit conditions in accordance with how an ideal photovoltaic cell should operate. PMID:25317958

  8. New cyclometalated Iridium(III) beta-dicetone complex as phosphorescent dopant in Organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ivanov, P.; Petrova, P.; Stanimirov, S.; Tomova, R.

    2017-01-01

    A new Bis[4-(benzothiazolato-N,C2‧-2-yl)-N,N-dimethylaniline]Iridium(III) acetylacetonate (Me2N-bt) 2Ir(acac) was synthesized and identified by 1H NMR and elemental analysis. The application of the new compound as a dopant in the hole transporting layer (HTL) of Organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was N,N’-bis(3-methylphenyl)-N,N’-diphenylbenzidine (TPD), incorporated in Poly(N-vinylcarbazole) (PVK) matrix, EL - electroluminescent layer of Bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy)aluminum (BAlq) and ETL - electron-transporting layer of Tris-(8-hydroxyquinoline) aluminum (Alq3) or Bis[2-(2-benzothiazoly) phenolato]zinc (Zn(btz)2). We established that the electroluminescent spectra of OLEDs at different concentrations of the dopant were basically the sum of the greenish-blue emission of BAlq and yellowish-green emission of Ir complex. It was found that with increasing of the dopant concentration the relative electroluminescent intensity of Iridium complex emission increased and this of BAlq decreased and as a result the fine tuning of OLED color was observed.

  9. A Peltier-based freeze-thaw device for meteorite disaggregation

    NASA Astrophysics Data System (ADS)

    Ogliore, R. C.

    2018-02-01

    A Peltier-based freeze-thaw device for the disaggregation of meteorite or other rock samples is described. Meteorite samples are kept in six water-filled cavities inside a thin-walled Al block. This block is held between two Peltier coolers that are automatically cycled between cooling and warming. One cycle takes approximately 20 min. The device can run unattended for months, allowing for ˜10 000 freeze-thaw cycles that will disaggregate meteorites even with relatively low porosity. This device was used to disaggregate ordinary and carbonaceous chondrite regoltih breccia meteorites to search for micrometeoroid impact craters.

  10. Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

    PubMed

    Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig

    2012-01-01

    Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.

  11. Mini array of quantum Hall devices based on epitaxial graphene

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.

    2016-05-07

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed thatmore » the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.« less

  12. A new JPEG-based steganographic algorithm for mobile devices

    NASA Astrophysics Data System (ADS)

    Agaian, Sos S.; Cherukuri, Ravindranath C.; Schneider, Erik C.; White, Gregory B.

    2006-05-01

    Currently, cellular phones constitute a significant portion of the global telecommunications market. Modern cellular phones offer sophisticated features such as Internet access, on-board cameras, and expandable memory which provide these devices with excellent multimedia capabilities. Because of the high volume of cellular traffic, as well as the ability of these devices to transmit nearly all forms of data. The need for an increased level of security in wireless communications is becoming a growing concern. Steganography could provide a solution to this important problem. In this article, we present a new algorithm for JPEG-compressed images which is applicable to mobile platforms. This algorithm embeds sensitive information into quantized discrete cosine transform coefficients obtained from the cover JPEG. These coefficients are rearranged based on certain statistical properties and the inherent processing and memory constraints of mobile devices. Based on the energy variation and block characteristics of the cover image, the sensitive data is hidden by using a switching embedding technique proposed in this article. The proposed system offers high capacity while simultaneously withstanding visual and statistical attacks. Based on simulation results, the proposed method demonstrates an improved retention of first-order statistics when compared to existing JPEG-based steganographic algorithms, while maintaining a capacity which is comparable to F5 for certain cover images.

  13. A rhythm-based authentication scheme for smart media devices.

    PubMed

    Lee, Jae Dong; Jeong, Young-Sik; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  14. Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

    NASA Astrophysics Data System (ADS)

    Liu, W. Z.; Xu, H. Y.; Zhang, L. X.; Zhang, C.; Ma, J. G.; Wang, J. N.; Liu, Y. C.

    2012-10-01

    Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.

  15. Optical sensor array platform based on polymer electronic devices

    NASA Astrophysics Data System (ADS)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  16. Empirically based device modeling of bulk heterojunction organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Pierre, Adrien; Lu, Shaofeng; Howard, Ian A.; Facchetti, Antonio; Arias, Ana Claudia

    2013-04-01

    We develop an empirically based optoelectronic model to accurately simulate the photocurrent in organic photovoltaic (OPV) devices with novel materials including bulk heterojunction OPV devices based on a new low band gap dithienothiophene-DPP donor polymer, P(TBT-DPP), blended with PC70BM at various donor-acceptor weight ratios and solvent compositions. Our devices exhibit power conversion efficiencies ranging from 1.8% to 4.7% at AM 1.5G. Electron and hole mobilities are determined using space-charge limited current measurements. Bimolecular recombination coefficients are both analytically calculated using slowest-carrier limited Langevin recombination and measured using an electro-optical pump-probe technique. Exciton quenching efficiencies in the donor and acceptor domains are determined from photoluminescence spectroscopy. In addition, dielectric and optical constants are experimentally determined. The photocurrent and its bias-dependence that we simulate using the optoelectronic model we develop, which takes into account these physically measured parameters, shows less than 7% error with respect to the experimental photocurrent (when both experimentally and semi-analytically determined recombination coefficient is used). Free carrier generation and recombination rates of the photocurrent are modeled as a function of the position in the active layer at various applied biases. These results show that while free carrier generation is maximized in the center of the device, free carrier recombination is most dominant near the electrodes even in high performance devices. Such knowledge of carrier activity is essential for the optimization of the active layer by enhancing light trapping and minimizing recombination. Our simulation program is intended to be freely distributed for use in laboratories fabricating OPV devices.

  17. Strong electroluminescence from direct band and defects in Ge n+/p shallow junctions at room temperature

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lin, Guangyang; Li, Cheng, E-mail: lich@xmu.edu.cn; Chen, Chaowen

    2016-05-09

    Strong room temperature electroluminescence with two emission peaks at around 0.786 eV and 0.747 eV from Ge n+/p shallow junctions was reported. The peak at around 0.786 eV comes from direct band luminescence (DBL) in n + Ge regions, while the peak fixing at 0.747 eV is resulted from defects induced by ion implantation. Heavy n-type doping in Ge renders realization of strong defect-related luminescence (DRL) feasible. The peak intensity ratio of DRL/DBL decreases with increase of injection current since more electrons are filled in Γ valley. Above all, the Ge n+/p shallow junction is fully compatible with the source and drain in Gemore » metal-oxide-semiconductor field effect transistors.« less

  18. Effects of the charge-transfer reorganization energy on the open-circuit voltage in small-molecular bilayer organic photovoltaic devices: comparison of the influence of deposition rates of the donor.

    PubMed

    Lee, Chih-Chien; Su, Wei-Cheng; Chang, Wen-Chang

    2016-05-14

    The theoretical maximum of open-circuit voltage (VOC) of organic photovoltaic (OPV) devices has yet to be determined, and its origin remains debated. Here, we demonstrate that VOC of small-molecule OPV devices can be improved by controlling the deposition rate of a donor without changing the interfacial energy gap at the donor/acceptor interface. The measurement of external quantum efficiency and electroluminescence spectra facilitates the observation of the existence of charge transfer (CT) states. A simplified approach by reusing the reciprocity relationship for obtaining the properties of the CT states is proposed without introducing complex techniques. We compare experimental and fitting results and propose that reorganization energy is the primary factor in determining VOC instead of either the CT energy or electronic coupling term in bilayer OPV devices. Atomic force microscopy images indicate a weak molecular aggregation when a higher deposition rate is used. The results of temperature-dependent measurements suggest the importance of molecular stacking for the CT properties.

  19. Quantum Optical Transistor and Other Devices Based on Nanostructures

    NASA Astrophysics Data System (ADS)

    Li, Jin-Jin; Zhu, Ka-Di

    Laser and strong coupling can coexist in a single quantum dot (QD) coupled to nanostructures. This provides an important clue toward the realization of quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful transfer efficiency. Under the radiation of a strong pump laser, a signal laser can be amplified or attenuated via passing through a single quantum dot coupled to a photonic crystal (PC) nanocavity system. Such a switching and amplifying behavior can really implement the quantum optical transistor. By simply turning on or off the input pump laser, the amplified or attenuated signal laser can be obtained immediately. Based on this transistor, we further propose a method to measure the vacuum Rabi splitting of exciton in all-optical domain. Besides, we study the light propagation in a coupled QD and nanomechanical resonator (NR) system. We demonstrate that it is possible to achieve the slow light, fast light, and quantum memory for light on demand, which is based on the mechanically induced coherent population oscillation (MICPO) and exciton polaritons. These QD devices offer a route toward the use of all-optical technique to investigate the coupled QD systems and will make contributions to quantum internets and quantum computers.

  20. Degradation of Bilayer Organic Light-Emitting Diodes Studied by Impedance Spectroscopy.

    PubMed

    Sato, Shuri; Takata, Masashi; Takada, Makoto; Naito, Hiroyoshi

    2016-04-01

    The degradation of bilayer organic light-emitting diodes (OLEDs) with a device structure of N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (α-NPD) (hole transport layer) and tris-(8-hydroxyquinolate)aluminum (Alq3) (emissive layer and electron transport layer) has been studied by impedance spectroscopy and device simulation. Two modulus peaks are found in the modulus spectra of the OLEDs below the electroluminescence threshold. After aging of the OLEDs, the intensity of electroluminescence is degraded and the modulus peak due to the Alq3 layer is shifted to lower frequency, indicating that the resistance of the Alq3 layer is increased. Device simulation reveals that the increase in the resistance of the Alq3 layer is due to the decrease in the electron mobility in the Alq3 layer.

  1. Broadly continuously tunable slot waveguide quantum cascade lasers based on a continuum-to-continuum active region design

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Meng, Bo; Zeng, Yong Quan; Liang, Guozhen

    2015-09-14

    We report our progress in the development of broadly tunable single-mode slot waveguide quantum cascade lasers based on a continuum-to-continuum active region design. The electroluminescence spectrum of the continuum-to-continuum active region design has a full width at half maximum of 440 cm{sup −1} at center wavelength ∼10 μm at room temperature (300 K). Devices using the optimized slot waveguide structure and the continuum-to-continuum design can be tuned continuously with a lasing emission over 42 cm{sup −1}, from 9.74 to 10.16 μm, at room temperature by using only current tuning scheme, together with a side mode suppression ratio of above 15 dB within the whole tuning range.

  2. Diode-laser-based therapy device

    NASA Astrophysics Data System (ADS)

    Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

    2004-10-01

    A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

  3. STM-electroluminescence from clustered C3N4 nanodomains synthesized via green chemistry process.

    PubMed

    Andrade, E P; Costa, B B A; Chaves, C R; de Paula, A M; Cury, L A; Malachias, A; Safar, G A M

    2018-01-01

    A Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and synchrotron X-ray diffraction study on clustered C 3 N 4 nanoparticles (nanoflakes) is conducted on green-chemistry synthesized samples obtained from chitosan through high power sonication. Morphological aspects and the electronic characteristics are investigated. The observed bandgap of the nanoflakes reveals the presence of different phases in the material. Combining STM morphology, STS spectra and X-ray diffraction (XRD) results one finds that the most abundant phase is graphitic C 3 N 4 . A high density of defects is inferred from the XRD measurements. Additionally, STM-electroluminescence (STMEL) is detected in C 3 N 4 nanoflakes deposited on a gold substrate. The tunneling current creates photons that are three times more energetic than the tunneling electrons of the STM sample. We ponder about the two most probable models to explain the observed photon emission energy: either a nonlinear optical phenomenon or a localized state emission. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Validating the Accuracy of Reaction Time Assessment on Computer-Based Tablet Devices.

    PubMed

    Schatz, Philip; Ybarra, Vincent; Leitner, Donald

    2015-08-01

    Computer-based assessment has evolved to tablet-based devices. Despite the availability of tablets and "apps," there is limited research validating their use. We documented timing delays between stimulus presentation and (simulated) touch response on iOS devices (3rd- and 4th-generation Apple iPads) and Android devices (Kindle Fire, Google Nexus, Samsung Galaxy) at response intervals of 100, 250, 500, and 1,000 milliseconds (ms). Results showed significantly greater timing error on Google Nexus and Samsung tablets (81-97 ms), than Kindle Fire and Apple iPads (27-33 ms). Within Apple devices, iOS 7 obtained significantly lower timing error than iOS 6. Simple reaction time (RT) trials (250 ms) on tablet devices represent 12% to 40% error (30-100 ms), depending on the device, which decreases considerably for choice RT trials (3-5% error at 1,000 ms). Results raise implications for using the same device for serial clinical assessment of RT using tablets, as well as the need for calibration of software and hardware. © The Author(s) 2015.

  5. Silicon insulator-based dielectrophoresis devices for minimized heating effects.

    PubMed

    Zellner, Phillip; Agah, Masoud

    2012-08-01

    Concentration of biological specimens that are extremely dilute in a solution is of paramount importance for their detection. Microfluidic chips based on insulator-based DEP (iDEP) have been used to selectively concentrate bacteria and viruses. iDEP biochips are currently fabricated with glass or polymer substrates to allow for high electric fields within the channels. Joule heating is a well-known problem in these substrates and can lead to decreased throughput and even device failure. In this work, we present, for the first time, highly efficient trapping and separation of particles in DC iDEP devices that are fabricated on silicon using a single-etch-step three-dimensional microfabrication process with greatly improved heat dissipation properties. Fabrication in silicon allows for greater heat dissipation for identical geometries and operating conditions. The 3D fabrication allows for higher performance at lower applied potentials. Thermal measurements were performed on both the presented silicon chips and previously published PDMS devices comprised of microposts. Trapping and separation of 1 and 2 μm polystyrene particles was demonstrated. These results demonstrate the feasibility of high-performance silicon iDEP devices for the next generation of sorting and concentration microsystems. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. A Rhythm-Based Authentication Scheme for Smart Media Devices

    PubMed Central

    Lee, Jae Dong; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience. PMID:25110743

  7. Exciton localization and ultralow onset ultraviolet emission in ZnO nanopencils-based heterojunction diodes.

    PubMed

    Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Long, Yan; Han, Xu; Wu, Bin; Zhang, Baolin; Du, Guotong

    2016-09-05

    n-GaN/i-ZnO/p-GaN double heterojunction diodes were constructed by vertically binding p-GaN wafer on the tip of ZnO nanopencil arrays grown on n-GaN/sapphire substrates. An increased quantum confinement in the tip of ZnO nanopencils has been verified by photoluminescence measurements combined with quantitative analyses. Under forward bias, a sharp ultraviolet emission at ~375 nm due to localized excitons recombination can be observed in ZnO. The electroluminescence mechanism of the studied diode is tentatively elucidated using a simplified quantum confinement model. Additionally, the improved performance of the studied diode featuring an ultralow emission onset, a good operation stability and an enhanced ultraviolet emission shows the potential of our approach. This work provides a new route for the design and development of ZnO-based excitonic optoelectronic devices.

  8. Electric-field-controlled interface dipole modulation for Si-based memory devices.

    PubMed

    Miyata, Noriyuki

    2018-05-31

    Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

  9. Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

    PubMed

    Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

    2016-09-01

    Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. CMOS compatible electrode materials selection in oxide-based memory devices

    NASA Astrophysics Data System (ADS)

    Zhuo, V. Y.-Q.; Li, M.; Guo, Y.; Wang, W.; Yang, Y.; Jiang, Y.; Robertson, J.

    2016-07-01

    Electrode materials selection guidelines for oxide-based memory devices are constructed from the combined knowledge of observed device operation characteristics, ab-initio calculations, and nano-material characterization. It is demonstrated that changing the top electrode material from Ge to Cr to Ta in the Ta2O5-based memory devices resulted in a reduction of the operation voltages and current. Energy Dispersed X-ray (EDX) Spectrometer analysis clearly shows that the different top electrode materials scavenge oxygen ions from the Ta2O5 memory layer at various degrees, leading to different oxygen vacancy concentrations within the Ta2O5, thus the observed trends in the device performance. Replacing the Pt bottom electrode material with CMOS compatible materials (Ru and Ir) further reduces the power consumption and can be attributed to the modification of the Schottky barrier height and oxygen vacancy concentration at the electrode/oxide interface. Both trends in the device performance and EDX results are corroborated by the ab-initio calculations which reveal that the electrode material tunes the oxygen vacancy concentration via the oxygen chemical potential and defect formation energy. This experimental-theoretical approach strongly suggests that the proper selection of CMOS compatible electrode materials will create the critical oxygen vacancy concentration to attain low power memory performance.

  11. Encryption Characteristics of Two USB-based Personal Health Record Devices

    PubMed Central

    Wright, Adam; Sittig, Dean F.

    2007-01-01

    Personal health records (PHRs) hold great promise for empowering patients and increasing the accuracy and completeness of health information. We reviewed two small USB-based PHR devices that allow a patient to easily store and transport their personal health information. Both devices offer password protection and encryption features. Analysis of the devices shows that they store their data in a Microsoft Access database. Due to a flaw in the encryption of this database, recovering the user’s password can be accomplished with minimal effort. Our analysis also showed that, rather than encrypting health information with the password chosen by the user, the devices stored the user’s password as a string in the database and then encrypted that database with a common password set by the manufacturer. This is another serious vulnerability. This article describes the weaknesses we discovered, outlines three critical flaws with the security model used by the devices, and recommends four guidelines for improving the security of similar devices. PMID:17460132

  12. Biomaterial-based Memory Device Development by Conducting Metallic DNA

    DTIC Science & Technology

    2013-05-28

    time. Therefore, we have created a multiple-states memory system . This is the first multi-states resistance memory device by using bio-nanowire of the...world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni-DNA detection system ...ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system

  13. Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

    NASA Astrophysics Data System (ADS)

    Piquette, Eric Charles

    The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and

  14. The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

    NASA Astrophysics Data System (ADS)

    Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

    2013-08-01

    Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

  15. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    NASA Astrophysics Data System (ADS)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  16. A cloud-based multimodality case file for mobile devices.

    PubMed

    Balkman, Jason D; Loehfelm, Thomas W

    2014-01-01

    Recent improvements in Web and mobile technology, along with the widespread use of handheld devices in radiology education, provide unique opportunities for creating scalable, universally accessible, portable image-rich radiology case files. A cloud database and a Web-based application for radiologic images were developed to create a mobile case file with reasonable usability, download performance, and image quality for teaching purposes. A total of 75 radiology cases related to breast, thoracic, gastrointestinal, musculoskeletal, and neuroimaging subspecialties were included in the database. Breast imaging cases are the focus of this article, as they best demonstrate handheld display capabilities across a wide variety of modalities. This case subset also illustrates methods for adapting radiologic content to cloud platforms and mobile devices. Readers will gain practical knowledge about storage and retrieval of cloud-based imaging data, an awareness of techniques used to adapt scrollable and high-resolution imaging content for the Web, and an appreciation for optimizing images for handheld devices. The evaluation of this software demonstrates the feasibility of adapting images from most imaging modalities to mobile devices, even in cases of full-field digital mammograms, where high resolution is required to represent subtle pathologic features. The cloud platform allows cases to be added and modified in real time by using only a standard Web browser with no application-specific software. Challenges remain in developing efficient ways to generate, modify, and upload radiologic and supplementary teaching content to this cloud-based platform. Online supplemental material is available for this article. ©RSNA, 2014.

  17. Gold-based electrical interconnections for microelectronic devices

    DOEpatents

    Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

    2002-01-01

    A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

  18. NCN-Coordinating Ligands based on Pyrene Structure with Potential Application in Organic Electronics.

    PubMed

    Zych, Dawid; Kurpanik, Aneta; Slodek, Aneta; Maroń, Anna; Pająk, Michał; Szafraniec-Gorol, Grażyna; Matussek, Marek; Krompiec, Stanisław; Schab-Balcerzak, Ewa; Kotowicz, Sonia; Siwy, Mariola; Smolarek, Karolina; Maćkowski, Sebastian; Danikiewicz, Witold

    2017-11-07

    Five novel derivatives of pyrene, substituted at positions 1,3,6,8 with 4-(2,2-dimethylpropyloxy)pyridine (P1), 4-decyloxypyridine (P2), 4-pentylpyridine (P3), 1-decyl-1,2,3-triazole (P4), and 1-benzyl-1,2,3-triazole (P5), are obtained through a Suzuki-Miyaura cross-coupling reaction or Cu I -catalyzed 1,3-dipolar cycloaddition reaction, respectively, and characterized thoroughly. TGA measurements reveal the high thermal stability of the compounds. Pyrene derivatives P1-P5 all show photoluminescence (PL) quantum yields (Φ) of approximately 75 % in solution. Solid-state photo- and electroluminescence characteristics of selected compounds as organic light-emitting diodes are tested. In the guest-host configuration, two matrixes, that is, poly(N-vinylcarbazole) (PVK) and a binary matrix consisting of PVK and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) (50:50 wt %), are applied. The diodes show red, green, or blue electroluminescence, depending on both the compound chemical structure and the actual device architecture. In addition, theoretical studies (DFT and TD-DFT) provide a deeper understanding of the experimental results. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Electroactive polymer-based devices for e-textiles in biomedicine.

    PubMed

    Carpi, Federico; De Rossi, Danilo

    2005-09-01

    This paper describes the early conception and latest developments of electroactive polymer (EAP)-based sensors, actuators, electronic components, and power sources, implemented as wearable devices for smart electronic textiles (e-textiles). Such textiles, functioning as multifunctional wearable human interfaces, are today considered relevant promoters of progress and useful tools in several biomedical fields, such as biomonitoring, rehabilitation, and telemedicine. After a brief outline on ongoing research and the first products on e-textiles under commercial development, this paper presents the most highly performing EAP-based devices developed by our lab and other research groups for sensing, actuation, electronics, and energy generation/storage, with reference to their already demonstrated or potential applicability to electronic textiles.

  20. Sample injection and electrophoretic separation on a simple laminated paper based analytical device.

    PubMed

    Xu, Chunxiu; Zhong, Minghua; Cai, Longfei; Zheng, Qingyu; Zhang, Xiaojun

    2016-02-01

    We described a strategy to perform multistep operations on a simple laminated paper-based separation device by using electrokinetic flow to manipulate the fluids. A laminated crossed-channel paper-based separation device was fabricated by cutting a filter paper sheet followed by lamination. Multiple function units including sample loading, sample injection, and electrophoretic separation were integrated on a single paper based analytical device for the first time, by applying potential at different reservoirs for sample, sample waste, buffer, and buffer waste. As a proof-of-concept demonstration, mixed sample solution containing carmine and sunset yellow were loaded in the sampling channel, and then injected into separation channel followed by electrophoretic separation, by adjusting the potentials applied at the four terminals of sampling and separation channel. The effects of buffer pH, buffer concentration, channel width, and separation time on resolution of electrophoretic separation were studied. This strategy may be used to perform multistep operations such as reagent dilution, sample injection, mixing, reaction, and separation on a single microfluidic paper based analytical device, which is very attractive for building micro total analysis systems on microfluidic paper based analytical devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Fabrication of paper-based analytical devices optimized by central composite design.

    PubMed

    Hamedpour, Vahid; Leardi, Riccardo; Suzuki, Koji; Citterio, Daniel

    2018-04-30

    In this work, an application of a design of experiments approach for the optimization of an isoniazid assay on a single-area inkjet-printed paper-based analytical device (PAD) is described. For this purpose, a central composite design was used for evaluation of the effect of device geometry and amount of assay reagents on the efficiency of the proposed device. The factors of interest were printed length, width, and sampling volume as factors related to device geometry, and amounts of the assay reagents polyvinyl alcohol (PVA), NH4OH, and AgNO3. Deposition of the assay reagents was performed by a thermal inkjet printer. The colorimetric assay mechanism of this device is based on the chemical interaction of isoniazid, ammonium hydroxide, and PVA with silver ions to induce the formation of yellow silver nanoparticles (AgNPs). The in situ-formed AgNPs can be easily detected by the naked eye or with a simple flat-bed scanner. Under optimal conditions, the calibration curve was linear in the isoniazid concentration range 0.03-10 mmol L-1 with a relative standard deviation of 3.4% (n = 5 for determination of 1.0 mmol L-1). Finally, the application of the proposed device for isoniazid determination in pharmaceutical preparations produced satisfactory results.

  2. Reinventing a p-type doping process for stable ZnO light emitting devices

    NASA Astrophysics Data System (ADS)

    Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2018-06-01

    A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

  3. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

    PubMed

    Zhong, Z Y; Jiang, Y D

    2006-10-15

    In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

  4. Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Geisz, John F.; France, Ryan M.; Steiner, Myles A.

    Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be appliedmore » to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.« less

  5. Dynamical analysis of relaxation luminescence in ZnS:Er3+ thin film devices

    NASA Astrophysics Data System (ADS)

    Wang, Yu-Jiang; Wu, Chen-Xu; Chen, Mou-Zhi; Huang, Mei-Chun

    2003-06-01

    The relaxation luminescence of ZnS:Er3+ thin film devices fabricated by thermal evaporation with two boats is studied. The dynamical processes of the luminescence of Er3+ in ZnS are described in terms of a resonant energy transfer model, assuming that the probability of collision excitation of injected electrons with luminescence centers is expressed as a Gaussian function. It is found that the frequency distribution depends on the Lorentzian function by considering the emission from excited states as a damped oscillator. Taking into consideration the energy storing effect of traps, an expression is obtained to describe a profile that contains multiple relaxation luminescence peaks using the convolution theorem. Fitting of experimental results shows that the relaxation characteristics of the electroluminescence are related to the carriers captured by bulk traps as well as by interface states. The numerical calculation carried out agrees well with the dynamical characteristics of relaxation luminescence obtained by experiments.

  6. Integration of Multiple Components in Polystyrene-based Microfluidic Devices Part 1: Fabrication and Characterization

    PubMed Central

    Johnson, Alicia S.; Anderson, Kari B.; Halpin, Stephen T.; Kirkpatrick, Douglas C.; Spence, Dana M.; Martin, R. Scott

    2012-01-01

    In Part I of a two-part series, we describe a simple, and inexpensive approach to fabricate polystyrene devices that is based upon melting polystyrene (from either a Petri dish or powder form) against PDMS molds or around electrode materials. The ability to incorporate microchannels in polystyrene and integrate the resulting device with standard laboratory equipment such as an optical plate reader for analyte readout and micropipettors for fluid propulsion is first described. A simple approach for sample and reagent delivery to the device channels using a standard, multi-channel micropipette and a PDMS-based injection block is detailed. Integration of the microfluidic device with these off-chip functions (sample delivery and readout) enables high throughput screens and analyses. An approach to fabricate polystyrene-based devices with embedded electrodes is also demonstrated, thereby enabling the integration of microchip electrophoresis with electrochemical detection through the use of a palladium electrode (for a decoupler) and carbon-fiber bundle (for detection). The device was sealed against a PDMS-based microchannel and used for the electrophoretic separation and amperometric detection of dopamine, epinephrine, catechol, and 3,4-dihydroxyphenylacetic acid. Finally, these devices were compared against PDMS-based microchips in terms of their optical transparency and absorption of an anti-platelet drug, clopidogrel. Part I of this series lays the foundation for Part II, where these devices were utilized for various on-chip cellular analysis. PMID:23120747

  7. High-efficiency white OLEDs based on small molecules

    NASA Astrophysics Data System (ADS)

    Hatwar, Tukaram K.; Spindler, Jeffrey P.; Ricks, M. L.; Young, Ralph H.; Hamada, Yuuhiko; Saito, N.; Mameno, Kazunobu; Nishikawa, Ryuji; Takahashi, Hisakazu; Rajeswaran, G.

    2004-02-01

    Eastman Kodak Company and SANYO Electric Co., Ltd. recently demonstrated a 15" full-color, organic light-emitting diode display (OLED) using a high-efficiency white emitter combined with a color-filter array. Although useful for display applications, white emission from organic structures is also under consideration for other applications, such as solid-state lighting, where high efficiency and good color rendition are important. By incorporating adjacent blue and orange emitting layers in a multi-layer structure, highly efficient, stable white emission has been attained. With suitable host and dopant combinations, a luminance yield of 20 cd/A and efficiency of 8 lm/W have been achieved at a drive voltage of less than 8 volts and luminance level of 1000 cd/m2. The estimated external efficiency of this device is 6.3% and a high level of operational stability is observed. To our knowledge, this is the highest performance reported so far for white organic electroluminescent devices. We will review white OLED technology and discuss the fabrication and operating characteristics of these devices.

  8. Physical Modeling of the Polyfrequency Filter-Compensating Device Based on the Capacitor-Coil

    NASA Astrophysics Data System (ADS)

    Butyrin, P. A.; Gusev, G. G.; Mikheev, D. V.; Shakirzianov, F. N.

    2017-12-01

    The paper presents the results of physical modeling and experimental study of the frequency characteristics of the polyfrequency filter-compensating device (PFCD) based on a capacitor-coil. The amplitude- frequency and phase-frequency characteristics of the physical PFCD model were constructed and its equivalent parameters were identified. The feasibility of a PFCD in the form of a single technical device with high technical and economic characteristics was experimentally proven. In the paper, recommendations for practical applications of the capacitor-coil-based PFCD are made and the advantages of the device over known standard passive filter-compensating devices are evaluated.

  9. Improved Emergency Egress Lighting System for the ISS

    NASA Technical Reports Server (NTRS)

    Eaton, Leslie L.; Barr, Don A.

    2005-01-01

    Emergency lights provide illumination in corridors, stairwells, ramps, escalators, aisles, and exit passageways during power failures. Safety and visibility are critical during a power outage. If emergency lights fail to operate properly, the building occupants can become disoriented. Four documents in a collection discuss different topics relating to a proposed improved emergency egress lighting system (EELS) for the International Space Station (ISS). While the present EELS is designed around rows of green-light-emitting diodes, the proposed system contains strips of electroluminescent tape using different colors for each egress path. The proposed EELS can be powered by the same battery currently used by the present EELS, but would require an inverter because electroluminescent devices require AC. Electroluminescent devices also require significantly less current and, depending on the color, would emit 3 to 8 times the light of the present EELS. In addition, they could operate for up to 75 hours (versus .20 minutes for the present system). The first document contains a one-page summary of the proposal and an evaluation of technical merit. The second document summarizes the motivation for, and the design of, the proposed EELS. The third document addresses relevant aspects of the measurement of spectral sensitivity and the psychophysics of perception of light. The fourth document presents additional background information and technical specifications for the electroluminescent tapes.

  10. Rapid Prototyping of a Smart Device-based Wireless Reflectance Photoplethysmograph

    PubMed Central

    Ghamari, M.; Aguilar, C.; Soltanpur, C.; Nazeran, H.

    2017-01-01

    This paper presents the design, fabrication, and testing of a wireless heart rate (HR) monitoring device based on photoplethysmography (PPG) and smart devices. PPG sensors use infrared (IR) light to obtain vital information to assess cardiac health and other physiologic conditions. The PPG data that are transferred to a computer undergo further processing to derive the Heart Rate Variability (HRV) signal, which is analyzed to generate quantitative markers of the Autonomic Nervous System (ANS). The HRV signal has numerous monitoring and diagnostic applications. To this end, wireless connectivity plays an important role in such biomedical instruments. The photoplethysmograph consists of an optical sensor to detect the changes in the light intensity reflected from the illuminated tissue, a signal conditioning unit to prepare the reflected light for further signal conditioning through amplification and filtering, a low-power microcontroller to control and digitize the analog PPG signal, and a Bluetooth module to transmit the digital data to a Bluetooth-based smart device such as a tablet. An Android app is then used to enable the smart device to acquire and digitally display the received analog PPG signal in real-time on the smart device. This article is concluded with the prototyping of the wireless PPG followed by the verification procedures of the PPG and HRV signals acquired in a laboratory environment. PMID:28959119

  11. Rapid Prototyping of a Smart Device-based Wireless Reflectance Photoplethysmograph.

    PubMed

    Ghamari, M; Aguilar, C; Soltanpur, C; Nazeran, H

    2016-03-01

    This paper presents the design, fabrication, and testing of a wireless heart rate (HR) monitoring device based on photoplethysmography (PPG) and smart devices. PPG sensors use infrared (IR) light to obtain vital information to assess cardiac health and other physiologic conditions. The PPG data that are transferred to a computer undergo further processing to derive the Heart Rate Variability (HRV) signal, which is analyzed to generate quantitative markers of the Autonomic Nervous System (ANS). The HRV signal has numerous monitoring and diagnostic applications. To this end, wireless connectivity plays an important role in such biomedical instruments. The photoplethysmograph consists of an optical sensor to detect the changes in the light intensity reflected from the illuminated tissue, a signal conditioning unit to prepare the reflected light for further signal conditioning through amplification and filtering, a low-power microcontroller to control and digitize the analog PPG signal, and a Bluetooth module to transmit the digital data to a Bluetooth-based smart device such as a tablet. An Android app is then used to enable the smart device to acquire and digitally display the received analog PPG signal in real-time on the smart device. This article is concluded with the prototyping of the wireless PPG followed by the verification procedures of the PPG and HRV signals acquired in a laboratory environment.

  12. Monitoring system of hydraulic lifting device based on the fiber optic sensors

    NASA Astrophysics Data System (ADS)

    Fajkus, Marcel; Nedoma, Jan; Novak, Martin; Martinek, Radek; Vanus, Jan; Mec, Pavel; Vasinek, Vladimir

    2017-10-01

    This article deals with the description of the monitoring system of hydraulic lifting device based on the fiber-optic sensors. For minimize the financial costs of the proposed monitoring system, the power evaluation of measured signal has been chosen. The solution is based on an evaluation of the signal obtained using the single point optic fiber sensors with overlapping reflective spectra. For encapsulation of the sensors was used polydimethylsiloxane (PDMS) polymer. To obtain a information of loading is uses the action of deformation of the lifting device on the pair single point optic fiber sensors mounted on the lifting device of the tested car. According to the proposed algorithm is determined information of pressure with an accuracy of +/- 5 %. Verification of the proposed system was realized on the various types of the tested car with different loading. The original contribution of the paper is to verify the new low-cost system for monitoring the hydraulic lifting device based on the fiber-optic sensors.

  13. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi, E-mail: saitow@hiroshima-u.ac.jp

    A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6 V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

  14. Glow discharge based device for solving mazes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dubinov, Alexander E., E-mail: dubinov-ae@yandex.ru; Mironenko, Maxim S.; Selemir, Victor D.

    2014-09-15

    A glow discharge based device for solving mazes has been designed and tested. The device consists of a gas discharge chamber and maze-transformer of radial-azimuth type. It allows changing of the maze pattern in a short period of time (within several minutes). The device has been tested with low pressure air. Once switched on, a glow discharge has been shown to find the shortest way through the maze from the very first attempt, even if there is a section with potential barrier for electrons on the way. It has been found that ionization waves (striations) can be excited in themore » maze along the length of the plasma channel. The dependancy of discharge voltage on the length of the optimal path through the maze has been measured. A reduction in discharge voltage with one or two potential barriers present has been found and explained. The dependency of the magnitude of discharge ignition voltage on the length of the optimal path through the maze has been measured. The reduction of the ignition voltage with the presence of one or two potential barriers has been observed and explained.« less

  15. Medical devices; immunology and microbiology devices; classification of nucleic acid-based devices for the detection of Mycobacterium tuberculosis complex and the genetic mutations associated with antibiotic resistance. Final order.

    PubMed

    2014-10-22

    The Food and Drug Administration (FDA) is classifying nucleic acid-based in vitro diagnostic devices for the detection of Mycobacterium tuberculosis complex (MTB-complex) and the genetic mutations associated with MTB-complex antibiotic resistance in respiratory specimens devices into class II (special controls). The Agency is classifying the device into class II (special controls) because special controls, in addition to general controls, will provide a reasonable assurance of safety and effectiveness of the device.

  16. InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stern, M.B.; Brody, E.; Sowell, B.

    1987-12-15

    Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 ..mu..m in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-..mu..m light output-current characteristic. The observed decrease in the 0.96-..mu..m intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.

  17. Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices.

    PubMed

    O'Toole, Martina; Diamond, Dermot

    2008-04-07

    The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements.

  18. Use of activity theory-based need finding for biomedical device development.

    PubMed

    Rismani, Shalaleh; Ratto, Matt; Machiel Van der Loos, H F

    2016-08-01

    Identifying the appropriate needs for biomedical device design is challenging, especially for less structured environments. The paper proposes an alternate need-finding method based on Cultural Historical Activity Theory and expanded to explicitly examine the role of devices within a socioeconomic system. This is compared to a conventional need-finding technique in a preliminary study with engineering student teams. The initial results show that the Activity Theory-based technique allows teams to gain deeper insights into their needs space.

  19. Micro Electromechanical Systems (MEMS) Based Microfluidic Devices for Biomedical Applications

    PubMed Central

    Ashraf, Muhammad Waseem; Tayyaba, Shahzadi; Afzulpurkar, Nitin

    2011-01-01

    Micro Electromechanical Systems (MEMS) based microfluidic devices have gained popularity in biomedicine field over the last few years. In this paper, a comprehensive overview of microfluidic devices such as micropumps and microneedles has been presented for biomedical applications. The aim of this paper is to present the major features and issues related to micropumps and microneedles, e.g., working principles, actuation methods, fabrication techniques, construction, performance parameters, failure analysis, testing, safety issues, applications, commercialization issues and future prospects. Based on the actuation mechanisms, the micropumps are classified into two main types, i.e., mechanical and non-mechanical micropumps. Microneedles can be categorized according to their structure, fabrication process, material, overall shape, tip shape, size, array density and application. The presented literature review on micropumps and microneedles will provide comprehensive information for researchers working on design and development of microfluidic devices for biomedical applications. PMID:21747700

  20. Non-binary Colour Modulation for Display Device Based on Phase Change Materials.

    PubMed

    Ji, Hong-Kai; Tong, Hao; Qian, Hang; Hui, Ya-Juan; Liu, Nian; Yan, Peng; Miao, Xiang-Shui

    2016-12-19

    A reflective-type display device based on phase change materials is attractive because of its ultrafast response time and high resolution compared with a conventional display device. This paper proposes and demonstrates a unique display device in which multicolour changing can be achieved on a single device by the selective crystallization of double layer phase change materials. The optical contrast is optimized by the availability of a variety of film thicknesses of two phase change layers. The device exhibits a low sensitivity to the angle of incidence, which is important for display and colour consistency. The non-binary colour rendering on a single device is demonstrated for the first time using optical excitation. The device shows the potential for ultrafast display applications.