Science.gov

Sample records for electroluminescent devices based

  1. Hybrid electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  2. White Electroluminescent Lighting Device Based on a Single Quantum Dot Emitter.

    PubMed

    Kim, Jong-Hoon; Jo, Dae-Yeon; Lee, Ki-Heon; Jang, Eun-Pyo; Han, Chang-Yeol; Jo, Jung-Ho; Yang, Heesun

    2016-07-01

    Using a single emitter of Cu-Ga-S/ZnS quantum dots, all-solution-processed white electroluminescent lighting device that not only exhibits the record quantities of 1007 cd m(-2) in luminance and 1.9% in external quantum efficiency but also possesses satisfactorily high color rendering indices of 83-88 is demonstrated. PMID:27135303

  3. Polymer matrix electroluminescent materials and devices

    DOEpatents

    Marrocco, III, Matthew L.; Motamedi, Farshad J.; Abdelrazzaq, Feras Bashir; Abdelrazzaq, legal representative, Bashir Twfiq

    2012-06-26

    Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units covalently coordinated to a phosphorescent or luminescent metal ion or metal ion complexes. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are also disclosed.

  4. Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays

    NASA Astrophysics Data System (ADS)

    O'Connor, É.; O'Riordan, A.; Doyle, H.; Moynihan, S.; Cuddihy, A.; Redmond, G.

    2005-05-01

    Crystalline 4.6 nm HgTe quantum dots, stabilized by 1-thioglycerol ligands, were synthesized by wet chemical methods. Room-temperature photoluminescence spectra of the dots, both in solution and as solid arrays, exhibited near-infrared emission. Light-emitting devices were fabricated by deposition of quantum dot layers onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates followed by top contacting with evaporated aluminum. Room-temperature near-infrared electroluminescence from 1mm2 ITO/PEDOT/HgTe/Al devices, centered at ˜1600nm, with an external quantum efficiency of 0.02% and brightness of 150nW/mm2 at 50 mA and 2.5 V was achieved.

  5. Organic electroluminescence: materials and devices

    NASA Astrophysics Data System (ADS)

    Kalinowski, Jan

    1996-04-01

    Electroluminescence (EL) inorganics is a phenomenon of both fundamental and practical interest. Defined as direct conversion of electricity into light incorporates many physical processes which are not yet fully understood. Considered originally as an organic analogue of the Destriau effect that is high-field or intrinsic EL found previously in inorganic phosphors, remains still obscure since narrow bands in organic solids rule out electron acceleration to energies allowing impact generation of electronic excited states. Therefore, the search for wide-band organic materials is a challenge to design and to fabricate organic intrinsic EL devices. The recombination radiation following the excess charge carrier injection into a luminescent material stands for injection EL. This type of EL is commonly accepted as a basis for the emission of light from organic materials sandwiched between metal electrodes. In this review, some consequences of the band width and energy level positions in low-molecular weight organic materials and polymers are discussed. Fundamental concepts are illustrated using the notions of recombination ((tau) rec) and transit ((tau) T) times of charge carriers. Injection-controlled ((tau) rec greater than (tau) T) and volume-controlled ((tau) rec less than (tau) T) injection EL modes are distinguished in organic light- emitting-diodes (LEDs). Two routes to fabricate spectrally tunable organic LEDs are discussed: (a) building multilayer devices with various materials as chromophores (emitters) and (b) employing single-layer conjugated polymer systems with different main-chain molecular structures and blending luminescent polymers into the host polymer matrix, or molecularly-doped non-conjugated polymers with appropriate selection of the optically active component. Charge carrier trapping and excitonic interactions are important factors affecting the recombination routes and production of emitting states as is demonstrated on EL from single organic

  6. Organic electroluminescent devices having improved light extraction

    DOEpatents

    Shiang, Joseph John

    2007-07-17

    Organic electroluminescent devices having improved light extraction include a light-scattering medium disposed adjacent thereto. The light-scattering medium has a light scattering anisotropy parameter g in the range from greater than zero to about 0.99, and a scatterance parameter S less than about 0.22 or greater than about 3.

  7. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

    PubMed Central

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  8. Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices.

    PubMed

    Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

    2015-01-01

    A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

  9. Rare Earth Complex as Electron Trapper and Energy Transfer Ladder for Efficient Red Iridium Complex Based Electroluminescent Devices.

    PubMed

    Zhou, Liang; Li, Leijiao; Jiang, Yunlong; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie

    2015-07-29

    In this work, we experimentally demonstrated the new functions of trivalent rare earth complex in improving the electroluminescent (EL) performances of iridium complex by codoping trace Eu(TTA)3phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) into a light-emitting layer based on PQ2Ir(dpm) (iridium(III)bis(2-phenylquinoly-N,C(2'))dipivaloylmethane). Compared with a reference device, the codoped devices displayed higher efficiencies, slower efficiency roll-off, higher brightness, and even better color purity. Experimental results demonstrated that Eu(TTA)3phen molecules function as electron trappers due to its low-lying energy levels, which are helpful in balancing holes and electrons and in broadening recombination zone. In addition, the matched triplet energy of Eu(TTA)3phen is instrumental in facilitating energy transfer from host to emitter. Finally, highly efficient red EL devices with the highest current efficiency, power efficiency and brightness up to 58.98 cd A(-1) (external quantum efficiency (EQE) of 21%), 61.73 lm W(-1) and 100870 cd m(-2), respectively, were obtained by appropriately decreasing the doping concentration of iridium complex. At certain brightness of 1000 cd m(-2), EL current efficiency up to 51.94 cd A(-1) (EQE = 18.5%) was retained. Our investigation extends the application of rare earth complexes in EL devices and provides a chance to improve the device performances. PMID:26173649

  10. Electroluminescent Devices Using RE-Doped III-Nitrides

    NASA Astrophysics Data System (ADS)

    Wakahara, Akihiro

    The III-nitride semiconductors doped with RE atoms appear to be excellent materials for thin film optical device applications. The spectral coverage extends from UV to infrared and thus light-emitting devices suitable for full-color displays, solid-state lasers, and optical telecommunication fields are expected. This chapter reviews the current status of electrically pumped light-emitting devices based on RE-doped GaN, such as AC- and/or DC-biased electroluminescent (EL) devices and `p-n' junction based light-emitting diodes. The different excitation mechanisms are reviewed.

  11. Electroluminescent Devices Using RE-Doped III-Nitrides

    NASA Astrophysics Data System (ADS)

    Wakahara, Akihiro

    The III-nitride semiconductors doped with RE atoms appear to be excellent materials for thin film optical device applications. The spectral coverage extends from UV to infrared and thus light-emitting devices suitable for full-color displays, solid-state lasers, and optical telecommunication fields are expected. This chapter reviews the current status of electrically pumped light-emitting devices based on RE-doped GaN, such as AC- and/or DC-biased electroluminescent (EL) devices and 'p-n' junction based light-emitting diodes. The different excitation mechanisms are reviewed.

  12. Single-layer electroluminescent devices based on fluorene-1H-pyrazolo[3,4-b]quinoxaline co-polymers

    NASA Astrophysics Data System (ADS)

    Pokladko-Kowar, Monika; Danel, Andrzej; Chacaga, Łukasz

    2013-11-01

    A fluorene based copolymer was synthesized for electroluminescent application. To the main chain of polymer the nitrogen heterocyclic, 1H-pyrazolo[3,4-b]quinoxaline, unit was introduced. The incorporation of this derivative tuned the emission from the blue to yellow-green one. A simple, single layered device was fabricated with the configuration ITO/PEDOT/co-poly-FLU-PQX/Ca/Mg.

  13. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    PubMed

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%. PMID:27607953

  14. White light-emitting organic electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

    2006-06-20

    A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

  15. Modeling study of mesh conductors and their electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Hu, Bin; Li, Dapeng; Manandhar, Prakash; Fan, Qinguo; Kasilingam, Dayalan; Calvert, Paul

    2015-02-01

    Numerical models were established to correlate with the experimentally measured properties of mesh conductors previously developed through a combined process of dip coating carbon nanotubes and inkjet printing poly 3,4-ethylenedioxythiophene: poly styrene sulfonate. The electroluminescent (EL) devices assembled with such mesh conductors as front electrodes were modeled by commercially available finite element method software COMSOL Multiphysics. The modeling results are in agreement with those from the experiments and suggest that an optimized fiber arrangement is the key for further improving the performance of EL devices based on mesh conductors.

  16. Evaporated CaS thin films for AC electroluminescence devices

    NASA Astrophysics Data System (ADS)

    Kobayashi, H.; Tanaka, S.; Shanker, V.; Shiiki, M.; Deguchi, H.

    1985-08-01

    The growth behavior of evaporated CaS thin films has been investigated to achieve bright electroluminescence. The crystallinity of CaS films is improved with substrate temperature and for temperatures higher than 300°C, the films orient to the (200) plane. Sulfur coevaporation further helps to form a more perfect film even at lower temperatures. A CaS: Ce,Cl electroluminescent thin film device has been fabricated with a brightness of 650 cd/m 2.

  17. Near-infrared electroluminescence from light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Yang, Yang; Lv, Chunyan; Zhu, Chen; Li, Si; Ma, Xiangyang; Yang, Deren

    2014-05-01

    We report on near-infrared (NIR) electroluminescence (EL) from the light-emitting devices based on Nd-doped TiO2/p+-Si heterostructures. NIR emissions peaking at ˜910, 1090, and 1370 nm, originated from intra-4f transitions in Nd3+ ions, can be activated by a forward bias voltage as low as ˜5 V. Such NIR EL is triggered by the energy transferred from TiO2 host to Nd3+ ions. It is found that the coexistence of anatase and rutile phases in the TiO2 host enables the device to exhibit pronounced Nd-related EL without concurrent emission from the TiO2 host itself, quite other than the case of existing only anatase phase in TiO2 host. We tentatively suggest that the anatase/rutile interface states play important role in the energy transfer from TiO2 host to Nd3+ ions.

  18. Electroluminescent devices with function of electro-optic shutter.

    PubMed

    Song, Seongkyu; Jeong, Jaewook; Chung, Seok Hwan; Jeong, Soon Moon; Choi, Byeongdae

    2012-09-10

    The polymer-dispersed liquid crystal (PDLC) was used as a dielectric layer of electroluminescent (EL) device to provide multi-function of electroluminescence and electro-optic shutter. A 50 μm-thick PDLC layer was formed between a transparent electrode and a ZnS:Cu phosphor layer. The electro-optic properties of the EL device were not distorted by the introduction of the PDLC layer. The extraction efficiency of luminescence was improved by more than 14% by PDLC layer. The transmittance of the PDLC was also founded not to be degraded significantly by excitation frequency. Therefore, the electroluminescence of the device was ignited by excitation frequency at a given voltage for full transparency of the PDLC. This device has great potential for applications in transparent displays with the function of a privacy window. PMID:23037230

  19. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

  20. Solid state carbon nanotube device for controllable trion electroluminescence emission

    NASA Astrophysics Data System (ADS)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  1. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

    DOEpatents

    Alivisatos, A. Paul; Colvin, Vickie

    1996-01-01

    An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

  2. Solid state carbon nanotube device for controllable trion electroluminescence emission.

    PubMed

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-28

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ∼5 × 10(-4) photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. PMID:26953676

  3. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

  4. Optical sensors and multisensor arrays containing thin film electroluminescent devices

    DOEpatents

    Aylott, Jonathan W.; Chen-Esterlit, Zoe; Friedl, Jon H.; Kopelman, Raoul; Savvateev, Vadim N.; Shinar, Joseph

    2001-12-18

    Optical sensor, probe and array devices for detecting chemical biological, and physical analytes. The devices include an analyte-sensitive layer optically coupled to a thin film electroluminescent layer which activates the analyte-sensitive layer to provide an optical response. The optical response varies depending upon the presence of an analyte and is detected by a photodetector and analyzed to determine the properties of the analyte.

  5. In-flight gas phase passivation of silicon nanocrystals for novel inorganic-silicon nanocrystal based electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Liptak, Richard William

    Silicon nanocrystals (SiNCs) have become a heavily researched material over the past several years. Researchers envision that this material can be used in many diverse applications such as electronic devices, non-toxic biological tags, optical devices such as LEDs, lasers or displays, thermoelectrics, and photovoltaic (PV) applications. For many of these proposed applications one needs to properly control the NC size and the surface chemistry via passivation. Current passivation techniques allow for the creation of highly efficient SiNC optical emitters, however the emission of these NCs are fixed in the red-NIR range. To resolve this issue several novel in-flight passivation techniques were investigated. A novel dual-plasma setup which allows for the in-flight passivation of SiNCs through a thermal or LPCVD based nitridation process was developed first. FTIR and XPS analysis were used to study the surface chemistry on of the nitride passivated NCs while TEM was used to investigate whether or not a "shell" was grown on the surface. PL measurements and thermal stability tests were performed on the nitride passivated NCs to gain a further understanding of the stability (in both air as well as other ambients) of the NCs and their surface chemistry. Tunable full color emission from SiNCs was developed for the dual-plasma reactor utilizing CF4 as both an etching and passivating source. F radicals generated in the etching plasma remove Si from the surface of the NC, while at the same time CF2 radicals lead to the formation of a fluorocarbon passivation layer on the NC surface. By controlling the parameters of the reactor (CF4 flow rate, power), the NC size and thus its color can be controlled. Red to green luminescence was observed from SiNCs and is believed to be due to the quantum confinement effect. The blue emission observed from the NCs is appears to be related to oxide related surface states. Despite the defects, high QY was observed from these CF4-etched NCs. The

  6. Carriers Confinement for Polymer Electroluminescent Devices with Multilayer Structure

    NASA Astrophysics Data System (ADS)

    Ma, Yuguang; Tian, Wenjing; Xue, Shanhua; Huang, Jinsong; Liu, Shiyong; Shen, Jiacong

    1995-07-01

    The polymer electroluminescence (EL) device with PBD as carriers confinement layer yields bright blue emission having intensity of 300 cd/m2, in same case the device without PBD layer have luminance only 44 cd/m2. The effect of PBD layer on EL characteristic was studied. The results show that only in EL devices with PBD thickness over 30 nm, the holes are completely confined in emitting layer. The luminance over 2000 cd/m2 can be obtained by inserting an electron injecting layer between the negative electrode and PBD to increase the electron injection.

  7. Iridium(III) emitters based on 1,4-disubstituted-1H-1,2,3-triazoles as cyclometalating ligand: synthesis, characterization, and electroluminescent devices.

    PubMed

    Fernández-Hernández, Jesús M; Beltrán, Juan I; Lemaur, Vincent; Gálvez-López, Maria-Dolores; Chien, Chen-Han; Polo, Federico; Orselli, Enrico; Fröhlich, Roland; Cornil, Jérôme; De Cola, Luisa

    2013-02-18

    A series of blue and blue-green emitters based on neutral bis- and tris-cyclometalated Ir(III) complexes with 1-benzyl-4-(2,6-difluorophenyl)-1H-1,2,3-triazole (dfptrBn) as cyclometalating ligand is reported. The bis-cyclometalated complexes of the type [Ir(dfptrBn)(2)(L(^)X)] with different ancillary ligands, L(^)X = picolinate (pic) (2) or 2-(5-(perfluorophenyl)-2H-1,2,4-triazol-3-yl)pyridine (pytrF(5)) (3), are described and their photophysical properties compared with the analogous complexes containing the archetypal 2-(2,4-difluorophenyl)pyridinato (dfppy) as cyclometaled ligand (C(^)N). Complex 2 exhibits a marked solvatochromic behavior, from 475 nm in toluene to 534 nm in formamide, due to the strong MLCT character of its emissive excited state. Complex 3 displays a true-blue emission, narrower in the visible part than FIrpic. In addition, the homoleptic complex [Ir(dfprBn)(3)] (4) and the heteroleptic compounds with mixed arylpyridine/aryltriazole ligands, [Ir(dfptrBn)(2)(C(^)N)] (C(^)N = 2-phenylpyridinato (ppy) (5) or dfppy (6)), have been synthesized and fully characterized. The facial (fac) complex fac-4 is emissive at 77 K showing a deep-blue emission, but it is not luminescent in solution at room temperature similarly to their phenylpyrazole counterparts. However, the fac isomers, fac-5 and fac-6, are highly emissive in solution and thin films, reaching emission quantum yields of 76%, with emission colors in the blue to blue-green region. The photophysical properties for all complexes have been rationalized by means of quantum-chemical calculations. In addition, we constructed electroluminescent devices, organic light-emitting diodes (OLEDs) by sublimation of fac-6, and by solution processed polymer-based devices (PLEDs) using complexes fac-5 or fac-6 as dopants. PMID:23383706

  8. Electroluminescent device having improved light output

    SciTech Connect

    Tyan; Yuan-Sheng; Preuss, Donald R.; Farruggia, Giuseppe; Kesel, Raymond A.; Cushman, Thomas R.

    2011-03-22

    An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

  9. Conduction and trapping in electroluminescent polymer devices

    NASA Astrophysics Data System (ADS)

    Campbell, Alasdair J.; Weaver, Michael S.; Lidzey, David G.; Bradley, Donal D. C.; Werner, Ekkehard; Bruetting, Wolfgang; Schwoerer, Markus

    1998-12-01

    The current-voltage characteristics of ITO/polymer film/Al or Au devices of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer can be fitted at high applied bias to a power law of the form J equals KVm where m increases with decreasing temperature, log(K) is proportional to m, and K is proportional to d-(alpha m) where d is the film thickness and (alpha) is a constant. (alpha) 2 and 1 for the Al and Au cathode devices respectively. Different single carrier space charge limited conduction (SCLC) theories, including either an exponential trap distribution or a hopping transport field and temperature dependent mobility, are used to try and explain this behavior. Both models are in good agreement with the general experimental results, but can also be criticized on a number of specific issues.Mixed SCLC models and the effect of dispersive transport are also explored. It is concluded that carrier mobility and trap measurements are required to distinguish between these models. To this end, initial trap measurements of ITO/PPV/Al devices using deep level transient spectroscopy (DLTS) are reported. Very deep positive carrier transport with emptying times > 4 minutes have been detected. The non-exponential DLTS transients have been successfully modeled on an isoelectronic trap level emptying to a Gaussian distribution of transport states, with a trap depth and density of 0.8eV and 4 by 1016 cm-3 respectively.

  10. Bulk limited conduction in electroluminescent polymer devices

    NASA Astrophysics Data System (ADS)

    Campbell, A. J.; Weaver, M. S.; Lidzey, D. G.; Bradley, D. D. C.

    1998-12-01

    The current-voltage (J-V) characteristics of ITO/polymer film/Al or Au structures of poly(phenylene vinylene) (PPV) and a dialkoxy PPV copolymer have been recorded for a range of different film thickness d and temperatures T. At high applied bias all the characteristics can be fitted over a given range to a power law J=KVm, where m increases with decreasing T, log(K) is proportional to m, and K is proportional to d-α m, where α˜2 (ITO/polymer film/Al devices) and ˜1 (ITO/polymer film/Au devices). Different single carrier space charge limited conduction theories have been used to try and explain this behavior. The analytical theory in which the carrier density is decreased by an exponential trap distribution lying below effectively isoelectronic transport states is in good agreement, but cannot explain the thickness dependence of the ITO/polymer film/Au devices and can be criticized as being physically unreasonable. A numerical analysis in which the mobility has the field and temperature dependence found for hopping transport in disordered systems is also in good agreement, but can only fit a small range of J and cannot explain the magnitude of K, the temperature dependence of m or the abrupt change in slope in the J-V characteristics with increasing bias. Mixed models are equally good but cannot explain the deviations from experiment. We consider that further experimental studies of carrier mobilities and the nature of the traps present in such materials is required to distinguish between these models and resolve the nature of bulk limited conduction in conjugated polymers.

  11. Optical properties of inorganic electroluminescent devices with nanostripe electrodes

    NASA Astrophysics Data System (ADS)

    Nonaka, Toshihiro; Yamamoto, Shin-ichi

    2016-03-01

    In this paper, we report on the luminescence (emission) characteristics of a laminated dispersion-type inorganic electroluminescent (EL) device with a nanostripe electrode made of thin Al film, instead of a conventional indium-tin oxide (ITO) transparent electrode, on the emission side of the device. The transmittance of the Al nanostripe electrode, with 60-nm line-and-space widths, was 45%. We compared an inorganic EL device positioned between two thin films of Al and the inorganic EL device with the Al nanostripe electrode using electric field simulations and actual experiments. We were able to apply the same electric field intensity to the phosphor layer in the conventional structure and to the new structure. Therefore, with an Al nanostripe electrode on one side of the EL device, it is possible to fabricate an ITO-free display.

  12. Individually addressable submicron scale light-emitting devices based on electroluminescence of solid Ru(bpy)3(ClO4)2 films.

    PubMed

    Liu, Chong-Yang; Bard, Allen J

    2002-04-24

    A submicron light-emitting device (LED) was fabricated from lithographically fabricated parallel indium-tin oxide (ITO) finger electrodes (0.9 mum wide) separated by a 1.1 mum gap. A single layer of an amorphous (a) Ru(bpy)3(ClO4)2 film ( approximately 100 nm thick) was spin-coated on the electrode array. Ga:In or carbon paste was employed as a liftable upper contact electrode. Films ( approximately 1.5 mum thick) of single-crystal Ru(bpy)3(ClO4)2 (xyl) between two ITO electrodes in a sandwich cell were also prepared and produce electroluminescence. As with larger cells of this type, the high-resolution electroluminescence produced showed a high external efficiency ( approximately 3.4%), a low turn-on voltage (2.3 V), and reasonable stability. The single-crystal cells also behaved as photovoltaic devices and a short-circuit photocurrent was observed when they were irradiated without a bias voltage. PMID:11960430

  13. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

    NASA Astrophysics Data System (ADS)

    Yang, Can; Wang, Xiao-Ping; Wang, Li-Jun; Pan, Xiu-Fang; Li, Song-Kun; Jing, Long-Wei

    2013-08-01

    An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

  14. Mechanically flexible organic electroluminescent device with directional light emission

    DOEpatents

    Duggal, Anil Raj; Shiang, Joseph John; Schaepkens, Marc

    2005-05-10

    A mechanically flexible and environmentally stable organic electroluminescent ("EL") device with directional light emission comprises an organic EL member disposed on a flexible substrate, a surface of which is coated with a multilayer barrier coating which includes at least one sublayer of a substantially transparent organic polymer and at least one sublayer of a substantially transparent inorganic material. The device includes a reflective metal layer disposed on the organic EL member opposite to the substrate. The reflective metal layer provides an increased external quantum efficiency of the device. The reflective metal layer and the multilayer barrier coating form a seal around the organic EL member to reduce the degradation of the device due to environmental elements.

  15. Theoretical and material studies of thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.

    1989-01-01

    Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

  16. Charge transfer through amino groups-small molecules interface improving the performance of electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Kus, Mahmut; Okur, Salih; Demic, Şerafettin; Demirak, Kadir; Kurt, Mustafa; Icli, Sıddık

    2016-05-01

    A carboxylic group functioned charge transporting was synthesized and self-assembled on an indium tin oxide (ITO) anode. A typical electroluminescent device [modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (2 nm)/(120 nm)] was fabricated to investigate the effect of the amino groups-small molecules interface on the characteristics of the device. The increase in the surface work function of ITO is expected to facilitate the hole injection from the ITO anode to the Hole Transport Layer (HTL) in electroluminescence. The modified electroluminescent device could endure a higher current and showed a much higher luminance than the nonmodified one. For the produced electroluminescent devices, the I-V characteristics, optical characterization and quantum yields were performed. The external quantum efficiency of the modified electroluminescent device is improved as the result of the presence of the amino groups-small molecules interface.

  17. An organic electroluminescent device made from a gadolinium complex

    NASA Astrophysics Data System (ADS)

    Gao, D.-Q.; Huang, C.-H.; Ibrahim, K.; Liu, F.-Q.

    2002-01-01

    A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (phenanthroline) gadolinium [Gd(PMIP) 3(Phen)] was synthesized and used as a light emitting material in the organic electroluminescent (EL) devices. The triple layer device with a structure of indium tin oxide (ITO)/ N, N'-diphenyl- N, N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) (20 nm)/Gd(PMIP) 3(Phen) (80 nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (bathocuproine or BCP) (20 nm)/Mg: Ag(200 nm)/Ag(100 nm) exhibited green emission peaking at 535 nm. A maximum luminance of 230 cd/m 2 at 17 V and a peak power efficiency of 0.02 lm/w at 9 V were obtained.

  18. Applications of thin film trielectrode electroluminescent display devices for automotive vehicles

    NASA Astrophysics Data System (ADS)

    Porada, Zbigniew W.

    1992-07-01

    Generally, dashboard information display devices can be divided into active and passive ones, i.e., emitting or modulating light. The thin film electroluminescent display devices belong to the former category. The new concept electroluminescent dashboard information display devices conceived by the author are presented in this paper. In this case, a DC and an AC power supply voltage are simultaneously applied. As a result, the DC voltage is essentially reduced to about 25 V DC. The electroluminescent information display device was prepared by vacuum methods on a glass substrate in the form of tri-electrode structure.

  19. Highly Efficient, Color-Reproducible Full-Color Electroluminescent Devices Based on Red/Green/Blue Quantum Dot-Mixed Multilayer.

    PubMed

    Lee, Ki-Heon; Han, Chang-Yeol; Kang, Hee-Don; Ko, Heejoo; Lee, Changho; Lee, Jonghyuk; Myoung, NoSoung; Yim, Sang-Youp; Yang, Heesun

    2015-11-24

    Over the past few years the performance of colloidal quantum dot-light-emitting diode (QLED) has been progressively improved. However, most of QLED work has been fulfilled in the form of monochromatic device, while full-color-enabling white QLED still remains nearly unexplored. Using red, green, and blue quantum dots (QDs), herein, we fabricate bichromatic and trichromatic QLEDs through sequential solution-processed deposition of poly(9-vinlycarbazole) (PVK) hole transport layer, two or three types of QDs-mixed multilayer, and ZnO nanoparticle electron transport layer. The relative electroluminescent (EL) spectral ratios of constituent QDs in the above multicolored devices are found to inevitably vary with applied bias, leading to the common observation of an increasing contribution of a higher-band gap QD EL over low-band gap one at a higher voltage. The white EL from a trichromatic device is resolved into its primary colors through combining with color filters, producing an exceptional color gamut of 126% relative to National Television Systems Committee (NTSC) color space that a state-of-the-art full-color organic LED counterpart cannot attain. Our trichromatic white QLED also displays the record-high EL performance such as the peak values of 23,352 cd/m(2) in luminance, 21.8 cd/A in current efficiency, and 10.9% in external quantum efficiency. PMID:26435403

  20. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    NASA Astrophysics Data System (ADS)

    Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

    2016-05-01

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

  1. About the electronic and photophysical properties of iridium(III)-pyrazino[2,3-f][1,10]-phenanthroline based complexes for use in electroluminescent devices.

    PubMed

    Cortés-Arriagada, Diego; Sanhueza, Luis; González, Iván; Dreyse, Paulina; Toro-Labbé, Alejandro

    2016-01-14

    A family of cyclometalated Ir(III) complexes was studied through quantum chemistry calculations to get insights into their applicability in light electrochemical cells (LECs). The complexes are described as [Ir(R-C^N)2(ppl)](+), where ppl is the pyrazino[2,3-f][1,10]-phenanthroline ancillary ligand. The modification of the HOMO energy in all the complexes was achieved by means of different R-C^N cyclometalating ligands, with R-ppy (phenylpyridine), R-pyz (1-phenylpyrazole) or R-pypy (2,3'-bipyridine); in addition, inductive effects were taken into account by substitution with the R groups (R = H, F or CF3). Then, compounds with HOMO-LUMO energy gaps from 2.76 to 3.54 eV were obtained, in addition to emission energies in the range of 438 to 597 nm. The emission deactivation pathways confirm the presence of metal-to-ligand transitions in all the complexes, which allow the strong spin-orbit coupling effects, and then improving the luminescence performance. However, the coupling with ligand and metal centered excited states was observed for the blue-shifted emitters, which could result in a decrease of the luminescence efficiencies. Furthermore, ionization potentials, electron affinities and reorganization energies (for holes and electrons) were obtained to account for the injection and transport properties of all the complexes in electroluminescent devices. PMID:26449274

  2. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

    PubMed

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-01

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications. PMID:23059798

  3. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices

    NASA Astrophysics Data System (ADS)

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Li Pira, Nello; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-01

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

  4. Nondoped-type red organic electroluminescent devices based on a 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran ultrathin layer

    NASA Astrophysics Data System (ADS)

    Xie, Wenfa; Liu, Shiyong

    2006-03-01

    Nondoped-type red organic electroluminescent devices based on a 4-(dicyanomethylene) -2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) ultrathin layer have been fabricated. When the ultrathin DCJTB layer is inserted between N, N'-bis-(1-naphthyl)-N, N'-diphenyl-1,1'-biph-enyl-4,4'-diamine (NPB) and tri-(8-hydroxyquinoline) aluminium (Alq3) (type A device), the emission from Alq3 is mixed with the emission from DCJTB and the colour purity of the device becomes poor. When utilizing the Alq3 (5 nm)/TPBI (45 nm) (TPBI: 2,2',2''-(1,3,5-phenylene)tris (1-phenyl-1 H-benzimidazole)) bilayer as a hole/exciton blocking and electron transporting layer (type B device), the emission from Alq3 disappears. We attribute it to the excitons confinement effect by the Alq3 (5 nm)/TPBI (45 nm) bilayer. The type B device with 0.2 nm DCJTB has a maximum efficiency of 2.20 cd A-1 and a luminance of 280 cd m-2 is achieved at 20 mA cm-2 with an EL efficiency of 1.41 cd A-1, and the CIE coordinates are (0.628, 0.369).

  5. Electroluminescence of carbon ‘quantum' dots - From materials to devices

    NASA Astrophysics Data System (ADS)

    Veca, L. Monica; Diac, Andreea; Mihalache, Iuliana; Wang, Ping; LeCroy, Gregory E.; Pavelescu, Emil Mihai; Gavrila, Raluca; Vasile, Eugeniu; Terec, Anamaria; Sun, Ya-Ping

    2014-10-01

    Carbon ‘quantum' dots or carbon dots have emerged as a new class of luminescent nanomaterials. While photoluminescence properties of carbon dots had targeted optical imaging and related usage, their unique excited state redox processes responsible for the luminescence emissions may find potentially significant optoelectronic applications. In this regard, we investigated the electroluminescence properties of the carbon dots integrated into multilayer light emitting diode devices. The devices emitted white light with a slight blue color, visible to naked eyes, thus validating the expectation that carbon dots may potentially serve as a new platform for electroluminescent nanomaterials.

  6. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    SciTech Connect

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  7. Light amplification device using organic electroluminescent diode coupled with photoresponsive organic pigment film

    NASA Astrophysics Data System (ADS)

    Katsume, Tadashi; Hiramoto, Masahiro; Yokoyama, Masaaki

    1995-05-01

    An all-organic light amplification device was successfully constructed using the organic electroluminescent diode coupled with photoresponsive perylene pigment film. Light amplification gain, such as the quantum efficiency of photon conversion, reached as large as 25-folds. Optical switching behavior caused by the feedback of output light to the photoresponsive perylene layer was noted. Because the spatial pattern of light was verified to be conserved precisely, the current device had the potential to evolve into the light amplification device, optical switching device, and optical memory device for two-dimensional parallel image processing.

  8. Highly efficient blue electroluminescence based on thermally activated delayed fluorescence.

    PubMed

    Hirata, Shuzo; Sakai, Yumi; Masui, Kensuke; Tanaka, Hiroyuki; Lee, Sae Youn; Nomura, Hiroko; Nakamura, Nozomi; Yasumatsu, Mao; Nakanotani, Hajime; Zhang, Qisheng; Shizu, Katsuyuki; Miyazaki, Hiroshi; Adachi, Chihaya

    2015-03-01

    Organic compounds that exhibit highly efficient, stable blue emission are required to realize inexpensive organic light-emitting diodes for future displays and lighting applications. Here, we define the design rules for increasing the electroluminescence efficiency of blue-emitting organic molecules that exhibit thermally activated delayed fluorescence. We show that a large delocalization of the highest occupied molecular orbital and lowest unoccupied molecular orbital in these charge-transfer compounds enhances the rate of radiative decay considerably by inducing a large oscillator strength even when there is a small overlap between the two wavefunctions. A compound based on our design principles exhibited a high rate of fluorescence decay and efficient up-conversion of triplet excitons into singlet excited states, leading to both photoluminescence and internal electroluminescence quantum yields of nearly 100%. PMID:25485987

  9. Highly efficient blue electroluminescence based on thermally activated delayed fluorescence

    NASA Astrophysics Data System (ADS)

    Hirata, Shuzo; Sakai, Yumi; Masui, Kensuke; Tanaka, Hiroyuki; Lee, Sae Youn; Nomura, Hiroko; Nakamura, Nozomi; Yasumatsu, Mao; Nakanotani, Hajime; Zhang, Qisheng; Shizu, Katsuyuki; Miyazaki, Hiroshi; Adachi, Chihaya

    2015-03-01

    Organic compounds that exhibit highly efficient, stable blue emission are required to realize inexpensive organic light-emitting diodes for future displays and lighting applications. Here, we define the design rules for increasing the electroluminescence efficiency of blue-emitting organic molecules that exhibit thermally activated delayed fluorescence. We show that a large delocalization of the highest occupied molecular orbital and lowest unoccupied molecular orbital in these charge-transfer compounds enhances the rate of radiative decay considerably by inducing a large oscillator strength even when there is a small overlap between the two wavefunctions. A compound based on our design principles exhibited a high rate of fluorescence decay and efficient up-conversion of triplet excitons into singlet excited states, leading to both photoluminescence and internal electroluminescence quantum yields of nearly 100%.

  10. Tunable Magneto-conductance and Magneto-electroluminescence in Polymer Light-Emitting Electrochemical Planar Devices

    NASA Astrophysics Data System (ADS)

    Geng, Rugang; Mayhew, Nicholas; Nguyen, Tho; Tho Nguyen Team

    2014-03-01

    We report first time studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using ``super-yellow'' poly-(phenylene vynilene), SY-PPV. We observed consistent negative MC while MEL changes sign to positive when electroluminescence quantum efficiency increases (ELQE). At optimal ELQE, the MC has a much narrower width than MEL indicating that MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power depending on the applied voltage. In addition, MC reduces its magnitude when the device current increases at constant illumination power. We discuss the results in the context of the existing models. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model. This work was supported by the start-up funds at UGA.

  11. Organic electroluminescent devices and method for improving energy efficiency and optical stability thereof

    DOEpatents

    Heller, Christian Maria

    2004-04-27

    An organic electroluminescent device ("OELD") has a controllable brightness, an improved energy efficiency, and stable optical output at low brightness. The OELD is activated with a series of voltage pulses, each of which has a maximum voltage value that corresponds to the maximum power efficiency when the OELD is activated. The frequency of the pulses, or the duty cycle, or both are chosen to provide the desired average brightness.

  12. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field. By use of the transfer matrix approach, the transmissivity of the structure is determined as a function of the incident electron energy. The approach presented is easily extended to many layer structures where it is more accurate than other existing transfer matrix or WKB models. The transmission resonances are compared to the bound state energies calculated for a finite square well under bias using either an asymmetric square well model or the exact solution of an infinite square well under the application of an electric field. The results show good agreement with other existing models as well as with the bound state energies. The calculations were then applied to a new superlattice structure, the variablly spaced superlattice energy filter, (VSSEP) which is designed such that under bias the spatial quantization levels fully align. Based on these calculations, a new class of resonant tunneling superlattice devices can be designed.

  13. Influence of bias voltage and temperature on charge transfer states in organic photovoltaic and electroluminescent integrated device

    SciTech Connect

    Huang, Jiang; Wang, Hanyu; Qi, Yige; Yu, Junsheng

    2014-05-19

    Based on the organic photovoltaic (PV) and electroluminescent (EL) integrated device with a structure of SubPc/C{sub 60} heterojunction, both PV and EL properties of charge transfer states (CTSs) were simultaneously investigated. By means of infrared and visible isolating method, the EL characteristics of CTSs and singlet-triplet excitons were separated, and their properties dependence on bias voltage and temperature was analyzed by introducing modified diode models. From the simulation on the emissive photons from CTSs, the temperature independent parameters of CTSs were extracted, which have close relationship with thermal activation energy and effective emissive state number of CTSs at the SubPc/C{sub 60} interface.

  14. Fluorene-fluorenone copolymer: Stable and efficient yellow-emitting material for electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Panozzo, S.; Vial, J.-C.; Kervella, Y.; Stéphan, O.

    2002-10-01

    We have synthesized and characterized a new fluorene copolymer exhibiting bright yellow luminescence. In order to ensure a complete π-stacking of the active layer, a 9-fluorenone monomeric unit (FOne) has been used as comonomer in conjunction with the more classical 9,9-di-n-nonylfluorene unit. As expected with fluorene-based materials, when excited at 370 nm, the corresponding dilute copolymer solution photoluminescence spectra exhibit a main peak centered at 450 nm in the blue part of the visible spectrum. However, in the solid state, immediate structural reorganization of the layer occurs, leading to a red-shifted emission (bright yellow emission) centered at 550 nm. The origin of the emitted light has been attributed to excimers and/or aggregates based on short FOne segments and involves mainly exciton transfer between nonaggregated fluorene segments and aggregated ones. It is noteworthy that organic light-emitting devices based on these new materials exhibit no spectral evolution upon device operation. However, although stacking leads generally to a detrimental quenching of the luminescence in the solid state, as for regular poly(alkyl-fluorene), the luminescence efficiency of the fluorene-fluorenone copolymer remains suitable for device preparation. High material stability is attributed to an efficient and fast structural reorganization of the active layer, triggered by the small proportion of fluorenone. High electroluminescence efficiency, when compared to aggregated regular poly(alkyl-fluorene), results from an improved electron injection, a better carrier transport, and the conjunction of an efficient energy transfer from fluorene segments to excimers and/or aggregates with the implication of spin triplet, which is often lacking when using regular semiconducting polymers.

  15. The electro-optical behavior of SrS:Ce electroluminescent devices under photonic excitation

    NASA Astrophysics Data System (ADS)

    Benoit, J.; Barthou, C.; Benalloul, P.; Polamo, K.

    2000-01-01

    The electro-optical behavior of the SrS:Ce electroluminescent devices under pulsed photonic excitation in the lower energy absorption band of Ce3+ was analyzed below the electroluminescence threshold voltage for a rectangular electric pulse. The photoluminescence quenching due to the ionization of the Ce3+ ions under the electrical field increases with the applied voltage (40% at the threshold). Delocalization of involved electrons is responsible for emissions at the trailing edge of the electric pulse and for emissions during the following pulse. These emissions do not restore the level of the photoluminescence without applied voltage. These different emissions allow detailed study of energy trap levels for each insulator/SrS interface. An interpretation of the photoluminescence quenching is proposed

  16. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    NASA Astrophysics Data System (ADS)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D.

    2013-12-01

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using "super-yellow" poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

  17. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    SciTech Connect

    Geng, R.; Mayhew, N. T.; Nguyen, T. D.

    2013-12-09

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

  18. Efficient red electroluminescence from devices having multilayers of a europium complex

    NASA Astrophysics Data System (ADS)

    Hu, Wenping; Matsumura, Michio; Wang, Mingzhao; Jin, Linpei

    2000-12-01

    In order to get red electroluminescence from a europium (Eu) complex with high efficiency, a hole-injection layer was inserted between the Eu-complex layer and an indium-tin-oxide electrode, and a hole-blocking layer was inserted between the Eu-complex and electron-transporting layers. To further improve the efficiency, devices having multiple-stacked Eu-complex (2.5 nm)/hole blocking (2.5 nm) units were fabricated. By stacking six units, the maximal luminance and emission efficiency of the red emission were increased to more than twice that from a device with a single Eu-complex layer.

  19. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    PubMed Central

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  20. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices

    NASA Astrophysics Data System (ADS)

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-05-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT) however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices.

  1. Determining the Origin of Half-bandgap-voltage Electroluminescence in Bifunctional Rubrene/C60 Devices.

    PubMed

    Chen, Qiusong; Jia, Weiyao; Chen, Lixiang; Yuan, De; Zou, Yue; Xiong, Zuhong

    2016-01-01

    Lowering the driving voltage of organic light-emitting diodes (OLEDs) is an important approach to reduce their energy consumption. We have fabricated a series of bifunctional devices (OLEDs and photovoltaics) using rubrene and fullerene (C60) as the active layer, in which the electroluminescence threshold voltage(~1.1 V) was half the value of the bandgap of rubrene. Magneto-electroluminescence (MEL) response of planner heterojunction diodes exhibited a small increase in response to a low magnetic field strength (<20 mT); however, a very large decay was observed at a high magnetic field strength (>20 mT). When a hole-transport layer with a low mobility was included in these devices, the MEL response reversed in shape, and simultaneously, the EL threshold voltage became larger than the bandgap voltage. When bulk heterojunction device was examined, the amplitude of MEL curves presented an anomalous voltage-dependence. Following an analysis of the MEL responses of these devices, we proposed that the EL of half-bandgap-voltage device originated from bimolecular triplet-triplet annihilation in the rubrene film, rather than from singlet excitons that formed via an interface auger recombination. This work provides critical insight into the mechanisms of OLED emission and will help advance the applications of bifunctional devices. PMID:27142285

  2. Electroluminescence efficiencies of erbium in silicon-based hosts

    SciTech Connect

    Cueff, Sébastien E-mail: christophe.labbe@ensicaen.fr; Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas; Kurvits, Jonathan A.; Zia, Rashid; Rizk, Richard; Labbé, Christophe E-mail: christophe.labbe@ensicaen.fr

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  3. Solution-Processable Silicon Phthalocyanines in Electroluminescent and Photovoltaic Devices.

    PubMed

    Zysman-Colman, Eli; Ghosh, Sanjay S; Xie, Guohua; Varghese, Shinto; Chowdhury, Mithun; Sharma, Nidhi; Cordes, David B; Slawin, Alexandra M Z; Samuel, Ifor D W

    2016-04-13

    Phthalocyanines and their main group and metal complexes are important classes of organic semiconductor materials but are usually highly insoluble and so frequently need to be processed by vacuum deposition in devices. We report two highly soluble silicon phthalocyanine (SiPc) diester compounds and demonstrate their potential as organic semiconductor materials. Near-infrared (λ(EL) = 698-709 nm) solution-processed organic light-emitting diodes (OLEDs) were fabricated and exhibited external quantum efficiencies (EQEs) of up to 1.4%. Binary bulk heterojunction solar cells employing P3HT or PTB7 as the donor and the SiPc as the acceptor provided power conversion efficiencies (PCE) of up to 2.7% under simulated solar illumination. Our results show that soluble SiPcs are promising materials for organic electronics. PMID:26990151

  4. Solution-Processable Silicon Phthalocyanines in Electroluminescent and Photovoltaic Devices

    PubMed Central

    2016-01-01

    Phthalocyanines and their main group and metal complexes are important classes of organic semiconductor materials but are usually highly insoluble and so frequently need to be processed by vacuum deposition in devices. We report two highly soluble silicon phthalocyanine (SiPc) diester compounds and demonstrate their potential as organic semiconductor materials. Near-infrared (λEL = 698–709 nm) solution-processed organic light-emitting diodes (OLEDs) were fabricated and exhibited external quantum efficiencies (EQEs) of up to 1.4%. Binary bulk heterojunction solar cells employing P3HT or PTB7 as the donor and the SiPc as the acceptor provided power conversion efficiencies (PCE) of up to 2.7% under simulated solar illumination. Our results show that soluble SiPcs are promising materials for organic electronics. PMID:26990151

  5. Electroluminescence from multilayer conjugated polymer devices: Spatial control of exciton formation and emission

    NASA Astrophysics Data System (ADS)

    Brown, A. R.; Greenham, N. C.; Burroughes, J. H.; Bradley, D. D. C.; Friend, R. H.; Burn, P. L.; Kraft, A.; Holmes, A. B.

    1992-11-01

    We have constructed electroluminescent diodes using several layers of conjugated polymers with differing band gaps; these provide a range of different colour light-emitting layers and can be used to control charge injection and transport. Poly(1,4-phenylenevinylene, PPV, and derivatives have been used, with indium/tin oxide as hole-injecting layer and calcium as electron-injecting contact layer. For this selection of materials, we show that the ordering of the polymer layers allows control of the colour of device emission. Emission can be produced in more than one layer.

  6. Near-infrared electroluminescent devices using single-wall carbon nanotubes thin flms

    NASA Astrophysics Data System (ADS)

    Kazaoui, S.; Minami, N.; Nalini, B.; Kim, Y.; Takada, N.; Hara, K.

    2005-11-01

    We have fabricated near-infrared electroluminescent (EL) devices utilizing single-wall carbon nanotubes (SWNTs) finely dispersed in a polymer, such as poly[2-methoxy-5-(2'-ethylhexyloxy]-1,4-phenylenevinylene (MEHPPV). Al/SWNT-MEHPPV/indium tin oxide thin-film devices exhibit a very promising EL response over a broad spectrum, including the range of 900-1600nm. From the analysis of the optical absorption, photoluminescence and EL spectra, as well as the current-voltage characteristics, we demonstrate that those devices exploit the intrinsic near-infrared light-emitting properties of semiconducting SWNTs and the electronic transport properties of SWNT-doped MEHPPV. Those achievements are essential for the future development of thin-film SWNT optoelectronic devices.

  7. Development of electroluminescence based pressure-sensitive paint system.

    PubMed

    Iijima, Yoshimi; Sakaue, Hirotaka

    2011-01-01

    We introduce a pressure-sensitive paint (PSP) measurement system based on an electroluminescence (EL) as a surface illumination. This consists of an inorganic EL as the illumination, a short-pass filter, and a platinum-porphyrin based PSP. The short-pass filter, which passes below 500 nm, was used to separate an overlay of the EL illumination and the PSP emission. The EL shows an opposite temperature dependency to that of the PSP. It gives a uniform illumination compared to that of a point illumination source such as a xenon lamp. Under atmospheric conditions, the resultant EL-PSP system reduces the temperature dependency by 54% compared to that of a conventional PSP system. An application of the EL-PSP system to a sonic jet impingement shows that the system demonstrated its reduction of the temperature dependency by 75% in a pressure measurement and reduces an image misalignment error. PMID:21280858

  8. Hole-transporting and emitting pendant polymers for organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Kageyama, Hiroshi; Mutaguchi, Daisuke; Hashimoto, Keisuke; Nagamatsu, Daisuke; Tanaka, Masatake; Okumoto, Kenji; Ohsedo, Yutaka; Shirota, Yasuhiko

    2006-08-01

    New hole-transporting pendant polymers with high glass-transition temperatures (Tgs) above 200 °C were designed and synthesized. Multilayer organic electroluminescent (EL) devices using the new polymers as the hole-transport layer and quinacridone-doped tris(8-quinolinolato)aluminum as the emitting layer exhibited high performance. One of the hole-transporting polymers functioned well as a hole injection buffer layer in organic EL devices. New green- and orange-emitting pendant polymers with high Tgs and desired ambipolar character were also designed and synthesized. Organic EL devices using these emitting polymers also exhibited good performance. One of the hole-transporting polymer showed a high hole carrier mobility of over 10 -3 cm2V -1s -1 at an electric field of 1.0 × 10 5 Vcm -1, as determined by a time-of-flight method.

  9. Electroluminescence of Giant Stretchability.

    PubMed

    Yang, Can Hui; Chen, Baohong; Zhou, Jinxiong; Chen, Yong Mei; Suo, Zhigang

    2016-06-01

    A new type of electroluminescent device achieves giant stretchability by integrating electronic and ionic components. The device uses phosphor powders as electroluminescent materials, and hydrogels as stretchable and transparent ionic conductors. Subject to cyclic voltage, the phosphor powders luminesce, but the ionic conductors do not electrolyze. The device produces constant luminance when stretched up to an area strain of 1500%. PMID:26610277

  10. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOEpatents

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  11. Electroluminescence from multilayer conjugated polymer devices--spatial control of exciton formation and emission

    NASA Astrophysics Data System (ADS)

    Greenham, Neil C.; Brown, Adam R.; Burroughes, Jeremy H.; Bradley, Donal D. C.; Friend, Richard H.; Burn, Paul L.; Kraft, Arno; Holmes, Andrew B.

    1993-08-01

    We have constructed electroluminescent diodes using several layers of conjugated polymers with differing energy gaps; these provide a range of different color light-emitting layers and can be used to control charge injection and transport. Poly(1,4-phenylenevinylene), PPV, and derivatives have been used, with indium tin oxide as hole-injecting electrode and calcium as electron-injecting electrode. For this selection of materials, we show that the sequence of the polymer layers allows control of the color of device emission. Emission from more than one layer can be produced simultaneously. The position and breadth of the light-emitting region of the device provides information about the mechanisms of charge transport and of exciton motion. Various models for multilayer emission are discussed in the paper.

  12. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    NASA Astrophysics Data System (ADS)

    Wang, Hanyu; Zhou, Jie; Wang, Xu; Lu, Zhiyun; Yu, Junsheng

    2014-08-01

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-{3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy}-2-(4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 1011 Jones at -3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm2, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m2. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  13. Effect of layered structures on the location of emissive regions in organic electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Aminaka, Ei-ichiro; Tsutsui, Tetsuo; Saito, Shogo

    1996-06-01

    Effect of layered structures on the location of emissive regions was studied in four types of organic electroluminescent (EL) devices: a single-layered (SL) device consisting only of an emissive layer (EML), two types of double-layered (DL-H and DL-E) devices in which a hole-transport layer (HTL) or an electron-transport layer (ETL) is attached to an EML, and a triple-layered (TL) device in which an EML is sandwiched between a HTL and an ETL. As EML, HTL and ETL material, 9, 10-bis[4-(diphenylamino)styryl]anthracene, 4,4'-bis[(3-methylphenyl)phenylamino]biphenyl and 1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]phenylene, respectively, were used. Within EML layers, a thin sensing layer doped with a squarilium dye, 2,4-bis[4-diethylamino)-2- hydroxyphenyl]cycrobutenediylium-1,3-dioxide was inserted. The change in emission intensity from the dopant, when the location of the sensing layer was systematically varied, gave information on emissive regions in each type of EL device. The emissive region in the SL device extended through the EML, and that in the DL-H device resided near the HTL/EML boundary. On the contrary, those in the DL-E and TL devices were located within a 10-nm-wide region adjacent to the EML/ETL boundary. Moreover, the emission efficiencies of the DL-E and TL devices were found to be higher than those of the SL and DL-H devices. It was experimentally demonstrated that the carrier recombination within the narrow region adjacent to the EML/carrier transport layer boundary gave high emission efficiency.

  14. Polarized electroluminescence from organic light-emitting devices using photon recycling.

    PubMed

    Park, Byoungchoo; Huh, Yoon Ho; Jeon, Hong Goo

    2010-09-13

    We present results that show highly polarized electroluminescence (EL) from an organic light-emitting device (OLED) by using a quarter-wave (λ/4) retardation plate (QWP) film and a giant birefringent optical (GBO) photonic reflective polarizer. Polarized EL light of 13,400 cd/m(2) with high peak efficiencies (greater than 10 cd/A and 3.5 lm/W) was obtained from an OLED in this way. These values are almost double those of a polarized OLED that only uses a polarizer. The direction of polarization of the emitted EL light from the polarized OLED corresponded to the passing axis of the GBO reflective polarizer. Furthermore, the degree of linear polarization obtained, i.e. the ratio between the brightness of two linearly polarized EL emissions parallel and perpendicular to the passing axis, is greater than 40 over the whole range of emitted luminance. PMID:20940874

  15. Optically pumped lasing and electroluminescence in ZnO/GaN nano-heterojunction array devices

    NASA Astrophysics Data System (ADS)

    Huang, Xiao-Ping; Liu, You-Liang; Wang, Peng; Chen, Kai; Zhao, Qing

    2015-11-01

    The preparation of a highly ordered ZnO/GaN nano-heterojunction array is introduced. Combining the merits of nanolaser and plasmonic Fabry-Perot nanolaser, we designed and fabricated an ultraviolet nanolaser with Ag-dielectric hybrid film-coated n-ZnO nanowires (NWs) array on p-GaN substrate. Ultraviolet random lasing behavior from the ZnO/GaN nano-heterojunction array has been demonstrated with both optical and electrical pumping, where the surface plasmon enhancement effect in the lasing process is discussed. The numerical simulation results show the surface plasmon at the Ag/SiO2/ZnO interface may be excited and strongly compress the wave-guided modes, which were found to optimize the lasing spectrum and increase the light intensity compared to the bare NWs array. With the electric pumping of the device, the electroluminescence parameters are characterized and the underlying mechanism is also discussed.

  16. Colloidal electroluminescence: Novel routes to controlled emission of organic light emitting diode devices

    NASA Astrophysics Data System (ADS)

    Huebner, Christopher Fletcher

    In recent years the importance of the organic light emitting diode (OLED) has grown immensely, and the past two decades have seen ongoing and exhaustive research in organic routes to solid state lighting, wherein electricity is directly converted into emitted light through an excited state relaxation mechanism. The benefits of incorporating polymeric and small molecule materials into solid state lighting devices include high efficiences, low production costs, amenability to large-scale production and devices, reduced environmental impact and low energy consumption. Herein are presented novel routes to materials engineering and preparation, device fabrication and emission tailoring through the abilility to form a variety of polymeric and small molecule materials into aqueously dispersed semiconductive electroluminescent (EL) colloids. Compartmentalization of the emissive and semiconductive species into colloidal particles affords the ability to systematically control energy transfer processes that occur in light emitting devices. Energy transfer can occur through a Coulombic (Forster) or an electronic (Dexter) process, each needing several conditions to be met for the transfer to occur, however common to both are spectral and proximal characteristics. In this work, energy transfer will be simultaneously exploited and inhibited through the creation of EL colloidal particles which can be combined in a dispersion or thin layer in order to tailor the light emission for a variety of applications.

  17. Self-Assembly of Rod-Coil Block Copolymers And Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Y.; Ma, B.; Segalman, R.A.

    2009-05-26

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  18. Self-Assembly of Rod-Coil Block Copolymers and Their Application in Electroluminescent Devices

    SciTech Connect

    Tao, Yuefei; Ma, Biwu; Segalman, Rachel A.

    2008-11-18

    The formation of alternating electron transporting and hole transporting 15 nm lamellae within the active layer of an organic light-emitting diode (OLED) is demonstrated to improve device performance. A new multifunctional bipolar rod-coil block copolymer containing a poly(alkoxy phenylenevinylene) (PPV) rod-shaped block as the hole transporting and emitting material and a poly(vinyloxadiazole) coil-shaped electron transporting block is synthesized. This new block copolymer is the active material of a self-assembling multicomponent electroluminescent device that can be deposited in a single step. In the thin film, grazing incidence X-ray scattering and transmission electron microscopy demonstrate that the layers form grains which are oriented bimodally: parallel and perpendicular from the anode. In this mixed orientation, the device demonstrates better performance than those with either pure PPV or a blend of the two analogous homopolymers as the active materials, i.e., higher external quantum efficiency (EQE) and brightness. This improved device performance is mainly attributed to the bipolar functionality and microphase separation of the block copolymer, which provide highly efficient hole and electron recombination at the nanodomain interfaces.

  19. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

    NASA Astrophysics Data System (ADS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang; Yang, Deren

    2015-04-01

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO2 (CeO2:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO2:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n+-Si/ITO can tunnel into the conduction band of CeO2 host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er3+ ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO2:Er films.

  20. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Gao, Yuhan; Ma, Xiangyang Yang, Deren

    2015-04-06

    We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

  1. Electroluminescence of ZnO-based semiconductor heterostructures

    SciTech Connect

    Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya; Parshina, L S; Khaidukov, E V; Zuev, D A; Khramova, O D

    2011-01-31

    Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

  2. Alternating-current thin-film electroluminescent device fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Baukol, Beau Alexander

    The goals of this thesis are to provide an improved understanding of luminescent materials, and to exploit their properties to achieve bright, efficient, and manufacturable red, green, and blue (RGB) phosphors for use in full-color flat-panel displays. A high-luminance, high-efficiency, full-color alternating-current thin-film electroluminescent (ACTFEL) phosphor system, capable of being processed at temperatures below the glass substrate melting temperature, has been developed through the use of source layer diffusion doping (SLDD) of atomic layer epitaxy (ALE) deposited SrS thin-films. The development of ACTFEL phosphors has also been advanced through the exploration of alternate phosphor materials, such as SrxCa 1-xS:Eu,Cu and (Ba.Zn)S:Mn. This thesis offers new insight into the nature of ACTFEL device operation, especially SrS:Cu ACTFEL devices. A comparison of "EL" thermal quenching trends for evaporated ZnS:Mn, ALE ZnS:Mn, ALE SrS:Ce, sputtered SrS:Cu,Ag, and sputtered multi-layer SrS:Cu,Ag/SrS:Ce ACTFEL devices is presented. ZnS:Mn ACTFEL devices exhibit the least amount of EL thermal quenching, which is attributed to non-radiative recombination. SrS:Cu and SrS:Cu,Ag ACTFEL devices possess the greatest amount of thermal quenching, which is primarily EL thermal quenching. The extent of EL thermal quenching is significantly reduced in a multi-layer SrS:Cu,Ag/SrS:Ce ACTFEL device, compared to that of a single-layer SrS:Cu or SrS:Cu,Ag ACTFEL device. The operation of SrS:Cu is examined as a function of temperature; the space charge density is found to increase with temperature up to ˜250 K with an activation energy of 0.02 eV. The space charge density in SrS:Cu ACTFEL devices is estimated as ˜1.8 x 1016, which yields estimates of the cathode phosphor field and the interfacial trap depth of ˜1.3 MV/cm and ˜0.73 eV, respectively.

  3. Planar electroluminescent panel techniques

    NASA Technical Reports Server (NTRS)

    Kerr, C.; Kell, R. E.

    1973-01-01

    Investigations of planar electroluminescent multipurpose displays with latch-in memory are described. An 18 x 24 in. flat, thin address panel with elements spacing of 0.100 in. was constructed which demonstrated essentially uniform luminosity of 3-5 foot lamberts for each of its 43200 EL cells. A working model of a 4-bit EL-PC (electroluminescent photoconductive) electrooptical decoder was made which demonstrated the feasibility of this concept. A single-diagram electroluminescent display device with photoconductive-electroluminescent latch-in memory was constructed which demonstrated the conceptual soundness of this principle. Attempts to combine these principles in a single PEL multipurpose display with latch-in memory were unsuccessful and were judged to exceed the state-of-the-art for close-packed (0.10 in. centers) photoconductor-electroluminescent cell assembly.

  4. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    SciTech Connect

    Wang, Hanyu; Wang, Xu; Yu, Junsheng E-mail: jsyu@uestc.edu.cn; Zhou, Jie; Lu, Zhiyun E-mail: jsyu@uestc.edu.cn

    2014-08-11

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-(3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy)-2- (4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 10{sup 11} Jones at −3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm{sup 2}, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m{sup 2}. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  5. Electroluminescence of quantum-dash-based quantum cascade laser structures

    SciTech Connect

    Liverini, V.; Bismuto, A.; Nevou, L.; Beck, M.; Faist, J.

    2011-12-23

    We developed two mid-infrared quantum cascade structures based on InAs quantum dashes. The dashes were embedded either in AlInGaAs lattice-matched to InP or in tensile-strained AlInAs. The devices emit between 7 and 11 {mu}m and are a step forward in the development of quantum cascade lasers based on 3-D confined active regions.

  6. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    NASA Astrophysics Data System (ADS)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  7. Highly directional emission via coupled surface-plasmon tunneling from electroluminescence in organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Feng, Jing; Okamoto, Takayuki; Kawata, Satoshi

    2005-12-01

    We report that highly directional electroluminescence from top-emitting organic light-emitting devices (TEOLEDs) can be achieved by using a two-dimensionally periodically corrugated silver film as a cathode and an organic dye with a narrow bandwidth of emission spectrum as an emitting material. The resonant excitation of surface plasmons on the silver film interfaces contributes to the light transmission through the silver cathode and to the directional emission. The TEOLEDs with a europium complex as an emissive layer show beam divergence of less than 4° and the beam direction is controlled by periodicity of the corrugation.

  8. Electroluminescence cells based on the lamellar solid hydrogen uranyl phosphate

    SciTech Connect

    Dieckmann, G.R.,; Ellis, A.B.; Hellstrom, E.E. )

    1990-07-01

    Electroluminescence (EL) cells have been constructed with the layered, ionically conducting solid, hydrogen uranyl phosphate, HUO{sub 2}PO{sub 4} {center dot} 4H{sub 2}O (HUP), as the emissive medium. With ac excitation, both uranyl emission and molecular nitrogen plasma emission are observed, with the latter appearing to excite the former; the uranyl EL spectrum matches the photoluminescence spectrum of the solid. Similar results were obtained with fully substituted sodium (NaUP), magnesium (Mg{sub 0.5}UP), and pyridinium (pyHUP) derivatives of HUP. For all of these solids, the dependence of the EL intensity on sample thickness, ac frequency, and applied voltage has been determined. Typical operating conditions are 1.5--3.0 kV at 0.2--4 kHz. Impedance measurements permitted acquisition of dielectric constants and ionic conductivities for these solids, both of which decrease in the order HUP {gt} NaUP {gt} Mg{sub 0.5}UP {gt} pyHUP. A model describing the dependence of EL intensity on cell parameters is presented.

  9. Electroluminescent ZnS:Mn films prepared by an MOCVD method based on dithiocarbamate precursors

    NASA Astrophysics Data System (ADS)

    Zavyalova, L. V.; Beletski, A. I.; Svechnikov, G. S.

    1999-05-01

    It is shown that electroluminescent ZnS:Mn films with luminance more than 0268-1242/14/5/013/img6 and luminous efficiency 0268-1242/14/5/013/img7 can be obtained by low-temperature deposition from Mn and Zn dithiocarbamates; subsequent thermal treatment of these films is not necessary. Starting materials were deposited on the substrate heated to a temperature of 220-0268-1242/14/5/013/img8C by spraying organic solution in air at atmospheric pressure. As a result homogeneous polycrystalline layers of ZnS:Mn with a growth rate of 60-0268-1242/14/5/013/img9 have been obtained. The electroluminescent characteristics of the thin films and structures based on various preparation and excitation conditions are presented. The possibility of application of these films as a planar light source is discussed.

  10. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO{sub 2} films on silicon

    SciTech Connect

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang Yang, Deren

    2015-03-15

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO{sub 2} films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO{sub 2} film is much stronger than that from the counterpart with the 450 °C-annealed CeO{sub 2} film. This is due to that the 550 °C-annealed CeO{sub 2} film contains more Ce{sup 3+} ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f{sup 1} energy band pertaining to Ce{sup 3+} ions leads to the UV-Vis EL.

  11. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

    2016-01-01

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  12. Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

    SciTech Connect

    Singh, Anju; Vishwakarma, H. L.

    2015-07-31

    In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the length of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  13. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells.

    PubMed

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-01-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A(-1) and 40.6 cd A(-1), respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A(-1) and 25.4 cd A(-1) for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

  14. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    NASA Astrophysics Data System (ADS)

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-06-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A‑1 and 40.6 cd A‑1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A‑1 and 25.4 cd A‑1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays.

  15. Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

    PubMed Central

    Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

    2016-01-01

    Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A−1 and 40.6 cd A−1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A−1 and 25.4 cd A−1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

  16. Mixing of phosphorescent and exciplex emission in efficient organic electroluminescent devices.

    PubMed

    Cherpak, Vladyslav; Stakhira, Pavlo; Minaev, Boris; Baryshnikov, Gleb; Stromylo, Evgeniy; Helzhynskyy, Igor; Chapran, Marian; Volyniuk, Dmytro; Hotra, Zenon; Dabuliene, Asta; Tomkeviciene, Ausra; Voznyak, Lesya; Grazulevicius, Juozas Vidas

    2015-01-21

    We fabricated a yellow organic light-emitting diode (OLED) based on the star-shaped donor compound tri(9-hexylcarbazol-3-yl)amine, which provides formation of the interface exciplexes with the iridium(III) bis[4,6-difluorophenyl]-pyridinato-N,C2']picolinate (FIrpic). The exciplex emission is characterized by a broad band and provides a condition to realize the highly effective white OLED. It consists of a combination of the blue phosphorescent emission from the FIrpic complex and a broad efficient delayed fluorescence induced by thermal activation with additional direct phosphorescence from the triplet exciplex formed at the interface. The fabricated exciplex-type device exhibits a high brightness of 38 000 cd/m(2) and a high external quantum efficiency. PMID:25537396

  17. Improved efficiency for green and red emitting electroluminescent devices using the same cohost composed of 9,10-di(2-naphthyl) anthracene and tris-(8-hydroxyquinolinato) aluminum

    NASA Astrophysics Data System (ADS)

    Zhu, Jianzhuo; Li, Wenlian; Chu, Bei; Yang, Dongfang; Zhang, Guang; Liu, Huihui; Chen, Yiren; Su, Zisheng; Wang, Junbo; Wu, Shuanghong

    2009-12-01

    We demonstrate highly efficient green and red fluorescence dyes-doped electroluminescent devices using cohost strategy. The cohost system is composed of tris-(8-hydroxyquinolinato) aluminum (Alq) and 9,10-di(2-naphthyl) anthracene (ADN). The maximum current efficiencies are increased by 54% and 104% for green and red devices by optimizing the ratio between ADN and Alq in the cohost compared to the conventional Alq single-host devices, respectively. We attribute the improvement of efficiencies to balanced hole and electron injection into the emitting layer, the enlarged width of recombination region and the multiple emission processes.

  18. Optimization of Metal Oxides Thickness and Related Organic Electroluminescent Device Performance.

    PubMed

    Chiu, Tien-Lung; Chuang, Ya-Ting

    2015-11-01

    In this study, three commercial transition metal oxides such as molybdenum trioxide (MoO3), tungsten trioxide (WO3), and vanadium pent-oxide (V2O5) were employed as hole-injection layer to improve the electrical and optical performance of organic light-emitting diodes (OLEDs). The layer thickness of MoO3, WO3 and V2O5 were respectively varied by 1, 2, 5 and 10 nm inside blue OLED to characterize their effects on device performance. The optimal OLED with a 5 nm MoO3 hole-injection layer performs an enhancement of 12.9% in current efficiency, 17.5% in power efficiency and 9.3% in maximum external quantum efficiency, comparing to that of reference device without hole-injection layer. PMID:26726669

  19. Polymer electroluminescent devices processed by inkjet printing: I. Polymer light-emitting logo

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh; Yang, Yang

    1998-05-01

    Inkjet printing (IJP) technology is a popular technology for desktop publishing. Since some of the conducting (or conjugated) polymers are solution processable, IJP technology becomes an ideal method for printing polymer light-emitting diodes with high resolution. Unfortunately, the polymer film printed from an inkjet printer usually consists of pin-holes, and this intrinsic character makes it unsuitable for fabricating high quality polymer electronic devices, particularly for devices in the sandwich structure. In this letter, we submit a hybrid structure, which consists of an inkjet printed layer in conjunction with another uniform spin coated polymer layer, as an alternative to the regular inkjet printed structure. The uniform layer serves as a buffer layer to seal the pin-holes and the IJP layer is the layer consisting of the desired pattern, for example the red-green-blue dots for a multicolor display. To demonstrate, we applied this hybrid technology to fabricate efficient and large area polymer light-emitting logos. The use of this concept represents a whole new technology of fabricating polymer electronic devices with lateral patterning capability.

  20. Effects of exciplex on the electroluminescent and photovoltaic properties of organic diodes based on terbium complex

    NASA Astrophysics Data System (ADS)

    He, Hong; Li, Wenlian; Su, Zisheng; Li, Tianle; Su, Wenming; Chu, Bei; Bi, Defeng; Han, Liangliang; Wang, Dan; Chen, Lili; Li, Bin; Zhang, Zhiqiang; Hu, ZhiZhi

    2008-01-01

    We fabricated two organic diodes, one of which consists of a double layer structure of TPD/Tb(ACA) 3phen and in the other one a mixture layer is inserted between the double layer, i.e., TPD/TPD:Tb(ACA) 3phen (1:1, 30 nm)/Tb(ACA) 3phen, here TPD and Tb(ACA) 3phen are ( N, N'-diphenyl- N, N'-bis(3-methyl-phenyl)-1,1'-biphenyl-4,4'-diamine) and tris(acetylacetonato)-(mono-phenothroline) terbium, respectively. Both the devices show electroluminescence (EL) properties under forward bias and photovoltaic (PV) effects under illumination of ultraviolet (UV) light. For the device with a mixture layer, the EL performance and PV effects were both significantly improved. A maximum EL brightness of 150 cd/m 2 under bias of 17 V and a maximum efficiency of 1.1 cd/A at 7.5 V were obtained. Moreover, the diode shows a short-circuit current ( Isc) of 43 μA cm -2, an open-circuit voltage ( Voc) of 1.1 V, a fill factor (FF) of 0.32, and an overall power conversion efficiency ( ηPV) of 1.0% under illumination of 365 nm UV light with 1.5 mW/cm 2. The improvements of PV- and EL-properties were presumably attributed to the increased intermolecular contacts in the mixture of TPD and Tb-complex. In addition, a shift of EL color from UV-blue to green-yellow was also observed when a mixture layer of TPD with Tb-complex was inserted. The operation mechanisms of the EL- and the PV-processes of the diodes with different structures were further discussed.

  1. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    PubMed

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V. PMID:20707129

  2. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  3. Electroluminescence of Halogen Complexes with Monovalent Copper: OLED Devices and DFT Modeling

    NASA Astrophysics Data System (ADS)

    Valiev, R. R.; Minaev, B. F.; Gadirov, R. M.; Nikonova, E. N.; Solodova, T. A.; Nikonov, S. Yu.; Bushuev, M. B.; Kopylova, T. N.

    2016-01-01

    Spectroscopic characteristics of complexes of Cu[I] ion with halogens synthesized by the TDDFT/CAM-B3LYP method are studied. It is shown that S0 → S1 and S0 → T1 electronic transitions are excitations with charge transfer. In this case, the electronic transitions proceed from the HOMO, HOMO-1 and HOMO-2 localized on halogen atoms to the LUMO localized on a ligand. The matrix elements of spin-orbit interaction are calculated using the single-electron operator (HSO). Based on these compounds, the organic light emitting diodes have been created. Their current-voltage and current-brightness characteristics are investigated.

  4. Effect of solution combusted TiO2 nanopowder within commercial BaTiO3 dielectric layer on the photoelectric properties for AC powder electroluminescence devices.

    PubMed

    Park, Sung; Choi, Gil Rak; Kim, Youn Cheol; Lee, Jae Chun; Lee, Ju Hyeon

    2013-05-01

    A unique synthesis method was developed, which is called solution combustion method (SCM). TiO2 nanopowder was synthesized by this method. This SCM TiO2 nanopowder (-35 nm) was added to the dielectric layer of AC powder electroluminescence (EL) device. The dielectric layer was made of commercial BaTiO3 powder (-1.2 microm) and binding polymer. 0, 5, 10 and 15 wt% of SCM TiO2 nanopowder was added to the dielectric layer during fabrication of AC powder EL device respectively. Dielectric constant of these four kinds of dielectric layers was measured. The brightness and current density of AC powder EL device were also measured. When 10 wt% of SCM TiO2 nanopowder was added, dielectric constant and brightness were increased by 30% and 101% respectively. Furthermore, the current density was decreased by 71%. This means that the brightness was double and the power consumption was one third. PMID:23858874

  5. Organic-inorganic heterostructure electroluminescent device using a layered perovskite semiconductor (C6H5C2H4NH3)2PbI4

    NASA Astrophysics Data System (ADS)

    Era, M.; Morimoto, S.; Tsutsui, T.; Saito, S.

    1994-08-01

    Using the combination of a layered perovskite compound (C6H5C2H4NH3)2PbI4 (PAPI), which forms a stable exciton with a large binding energy owing to its low-dimensional semiconductor nature and exhibits sharp and strong photoluminescence from the exciton band, and an electron-transporting oxadiazole derivative, we fabricated an organic-inorganic heterostructure electroluminescent (EL) device. The EL spectrum of the device corresponded well to the photoluminescence spectrum of the PAPI film; the emission was peaking at 520 nm and half-width of the emission was about 10 nm at liquid-nitrogen temperature. Further, highly intense EL of more than 10 000 cd m-2 was performed at 2 A cm-2 at liquid-nitrogen temperature in the device.

  6. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    SciTech Connect

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Goano, Michele Bertazzi, Francesco; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  7. Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Gao, Fan; Zhang, Dakuan; Wang, Jianyu; Sun, Huabin; Yin, Yao; Sheng, Yun; Yan, Shancheng; Yan, Bo; Sui, Chenghua; Zheng, Youdou; Shi, Yi; Liu, Jianlin

    2016-06-01

    Ultraviolet electroluminescence from Schottky type LED device is demonstrated. The device prototype is based on Schottky junctions formed between Au and the top ends of ZnO nanowire arrays. Rectifying current-voltage characteristics are observed, and three different charge transport mechanisms are discussed in detail. Excitonic electroluminescence at around 380 nm is detected at high forward bias and the linear relationship between intensity and current suggests a LED device performance. The observation of LED signals from the simple Schottky structure provides a potential supplement to the category of ultraviolet LED devices.

  8. Photo- and electroluminescent properties of zinc(II) complexes with tetradentate Schiff bases, derivatives of salicylic aldehyde

    NASA Astrophysics Data System (ADS)

    Vashchenko, A. A.; Lepnev, L. S.; Vitukhnovskii, A. G.; Kotova, O. V.; Eliseeva, S. V.; Kuz'mina, N. P.

    2010-03-01

    It is studied how the introduction of various substituents into the composition of organic ligands affects the photoluminescence spectra of new zinc(II) complexes with tetradentate Schiff bases H2L (derivatives of salicylic aldehyde (H2SAL1, H2SAL2) and o-vanillin (H2MO1, H2MO2) with ethylenediamine and o-phenylenediamine) in the form of bulk solids and thin films. It is demonstrated that the emission spectra of bulk solid complexes without o-phenylenediamine bridges (ZnSAL1 and ZnMO1) contain additional long-wavelength bands compared to the spectra of corresponding thin films. In the case of films obtained from [ZnSAL1]2 dimer complexes, the long-wavelength band is dominant. At the same time, the photoluminescence spectra of ZnSAL2 and ZnMO2 complexes with o-phenylenediamine bridges are similar in the case of solid samples and thin films. The electroluminescent properties of organic light-emitting diodes (OLEDs) with the ITO/α-NPD/ZnL/Ca:Al structure are studied. The bathochromic shift of the electroluminescence peaks of OLEDs with respect to the photoluminescence spectra of bulk solid samples and thin films is probably related to the formation of exciplexes at the α-NPD/ZnL interface. The electroluminescence spectra of OLEDs based on [ZnSAL1]2 show a hypsochromic shift of the emission maximum, which can be caused by a shift of the recombination region into the α-NPD layer.

  9. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

    PubMed

    Koester, Robert; Hwang, Jun-Seok; Salomon, Damien; Chen, Xiaojun; Bougerol, Catherine; Barnes, Jean-Paul; Dang, Daniel Le Si; Rigutti, Lorenzo; de Luna Bugallo, Andres; Jacopin, Gwénolé; Tchernycheva, Maria; Durand, Christophe; Eymery, Joël

    2011-11-01

    Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11-00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on c-sapphire substrates. The structural properties of single wires are studied in detail by scanning transmission electron microscopy and in a more original way by secondary ion mass spectroscopy to quantify defects, thickness (1-8 nm) and In-composition in the wells (∼16%). The core-shell MQW light emission characteristics (390-420 nm at 5 K) were investigated by cathodo- and photoluminescence demonstrating the absence of the quantum Stark effect as expected due to the nonpolar orientation. Finally, these radial nonpolar quantum wells were used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission. PMID:21967509

  10. Magnetically modulated electroluminescence from hybrid organic/inorganic light-emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Pang, Zhiyong; Baniya, Sangita; Zhang, Chuang; Sun, Dali; Vardeny, Z. Valy

    2016-03-01

    We report room temperature magnetically modulated electroluminescence from a hybrid organic/inorganic light-emitting diode (h-OLED), in which an inorganic magnetic tunnel junction (MTJ) with large room temperature magnetoresistance is coupled to an N,N,N ',N '-Tetrakis(4-methoxyphenyl)benzidine (MeO-TPD): tris-[3-(3-pyridyl)mesityl]borane (3TPYMB) [D-A] based OLED that shows thermally activated delayed luminescence. The exciplex-based OLED provides two spin-mixing channels: upper energy channel of polaron pairs and lower energy channel of exciplexes. In operation, the large resistance mismatch between the MTJ and OLED components is suppressed due to the non-linear I-V characteristic of the OLED. This leads to enhanced giant magneto-electroluminescence (MEL) at room temperature. We measured MEL of ~ 75% at ambient conditions. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  11. Electroluminescent layers based on ZnS:Cu deposited into matrices of porous anodic Al2O3

    NASA Astrophysics Data System (ADS)

    Valeev, R. G.; Petukhov, D. I.; Chukavin, A. I.; Bel'tyukov, A. N.

    2016-02-01

    It is suggested to use a new nanocomposite material—nanostructures of copper-doped zinc sulfide in a matrix of porous aluminum oxide—as a light-emitting layer of electroluminescent sources of light. The material was deposited by thermal evaporation in a vacuum. The microstructure of the layers, impurity distribution in the electroluminescent-phosphor layer, and electroluminescence spectra at various copper concentrations in ZnS:Cu were studied.

  12. A novel violet/blue light-emitting device based on Ce2Si2O7

    PubMed Central

    Li, Ling; Wang, Shenwei; Mu, Guangyao; Yin, Xue; Ou, Kai; Yi, Lixin

    2015-01-01

    Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f–5d transitions of the Ce3+ ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed. PMID:26564241

  13. REVIEW ARTICLE: Electroluminescence in organics

    NASA Astrophysics Data System (ADS)

    Kalinowski, Jan

    1999-12-01

    There is growing interest in organic electroluminescence (EL). A great deal of progress has been made recently in improving the performance of various classes of organic EL devices. Some of these are now adequate for many applications. However, specialists focusing on selected aspects of organic EL devices have often lost contact with the general subject of EL. Therefore, a review covering all aspects of EL mechanisms and their experimental manifestation seemed necessary. This article is concerned with the new EL device physics that can be realized using crystals, or films made of organic materials, as electrically and optically active components, in devices ranging from simple single-component light emitting diodes (LEDs), through double- and multi-layer LEDs to light emitting electrochemical cells (LECs) and organic LED-based light transducers. The investigation of the properties of these devices has provided in turn a very effective method for studying the basic EL phenomena in these materials. Since the subject of the present review has generated a huge amount of literature, and it is impossible to mention here all that has been done, we have attempted to provide an outline of the background of the field of organic EL, and discussed in some detail those aspects most relevant to the EL device physics. Because of the diversity of the types of material and EL structure, there is no single, simple description of EL in organics. Therefore, the initial sections of the article are devoted to a discussion of the types of EL and related phenomena, such as carrier injection and recombination or nature of emitting states. Then, the fundamentals of the fabrication of various types of EL devices are discussed along with the most representative examples. In general, the reader will find in the article a brief historical review of the subject as well as a description of the latest trends in organic EL research covering all the new concepts and most important data which have

  14. Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors

    SciTech Connect

    Gal'china, N. A.; Kogan, L. M.; Soshchin, N. P.; Shirokov, S. S.; Yunovich, A. E.

    2007-09-15

    The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360-405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially with the photon energy in the shorter-wavelength and longer-wavelength regions. The emitters in the green and yellow spectral regions based on these light-emitting diodes coated with silicate phosphors are studied. The luminescence spectra of phosphors have the Gaussian shape and maximums in the range from 525 to 560 nm. The color characteristics of emitters depend on the ratios of intensities of the ultraviolet and yellow-green bands. The possibilities of fabrication of light-emitting diodes of visible luminescence based on ultraviolet light-emitting diodes that excite colored phosphors are discussed.

  15. ELECTROLUMINESCENT MATERIAL FOR FLAT PANEL DISPLAY

    SciTech Connect

    Smith, D.B.

    2000-11-13

    The purpose of this Cooperative Research and Development Agreement (CRADA) was to develop a new-generation electroluminescent (EL) material for flat panel displays and related applications by using unique and complementary research capabilities at Oak Ridge National Laboratory and OSRAM Sylvania, Inc. The goal was to produce an EL material with a luminance 10 times greater than conventional EL phosphors. An EL material with this increased luminance would have immediate applications for flat panel display devices (e.g., backlighting for liquid-crystal diodes) and for EL lamp technology. OSRAM Sylvania proposed that increased EL phosphor luminance could be obtained by creating composite EL materials capable of alignment under an applied electric field and capable of concentrating the applied electric field. Oak Ridge National Laboratory used pulsed laser deposition as a method for making these composite EL materials. The materials were evaluated for electroluminescence at laboratory facilities at OSRAM Sylvania, Inc. Many composite structures were thus made and evaluated, and it was observed that a composite structure based on alternating layers of a ferroelectric and a phosphor yielded electroluminescence. An enabling step that was not initially proposed but was conceived during the cooperative effort was found to be crucial to the success of the composite structure. The CRADA period expired before we were able to make quantitative measurements of the luminance and efficiency of the composite EL material. Future cooperative work, outside the scope of the CRADA, will focus on making these measurements and will result in the production of a prototype composite EL device.

  16. Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films

    SciTech Connect

    Zhu, Chen; Gao, Zhifei; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang Yang, Deren; Lv, Chunyan

    2015-09-28

    We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gaining the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.

  17. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Masui, Hisashi; Sonoda, Junichi; Pfaff, Nathan; Koslow, Ingrid; Nakamura, Shuji; Den Baars, Steven P.

    2008-08-01

    The quantum-confined Stark effect (QCSE) on InGaN-based light-emitting diodes (LEDs) was investigated as a part of the continuing study of exploring differences between photoluminescence (PL) and electroluminescence (EL) characteristics. The luminescence characteristics were related to electrical characteristics of green and amber LEDs by employing the electrical-bias-applied PL technique. By inspecting the band diagram, it has been found that the separation of quasi-Fermi levels, which strongly affects the QCSE, can be quantified and related to the luminescence. In order to compare PL and EL characteristics, attention was paid to the QCSE during the PL and EL measurements. Despite the control of the QCSE, differences were still confirmed between PL and EL characteristics, which have led us to the conclusion to that there are other unrevealed origins for the differences.

  18. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  19. Circularly Polarized Phosphorescent Electroluminescence with a High Dissymmetry Factor from PHOLEDs Based on a Platinahelicene.

    PubMed

    Brandt, Jochen R; Wang, Xuhua; Yang, Ying; Campbell, Alasdair J; Fuchter, Matthew J

    2016-08-10

    Circularly polarized (CP) light is of interest in areas such as quantum optical computing, optical spintronics, biomedicine, and high efficiency displays. Direct emission of CP light from organic light-emitting diodes (OLEDs) has been a focus of research as it has the immediate application of increasing efficiency and simplifying device architecture in OLED based displays. High dissymmetry (gEL) factor values have been reported for devices employing fluorescent polymers, but these CP-OLEDs are limited in their ultimate efficiencies by the type of emissive electronic transitions involved. In contrast, phosphorescent OLEDs (PHOLEDs) can emit light from triplet excited states and can therefore achieve very high efficiencies. However, CP-PHOLEDs are significantly understudied, and the two previous reports suffered from very low brightness or gEL values. Here, we use a platinahelicene complex to construct a CP-PHOLED that achieves both a display level brightness and a high gEL factor. The dissymmetry of CP emission reached with this proof-of-concept single-layer helicene-based device is sufficient to provide real-world benefits over nonpolarized emission and paves the way toward chiral metal complex-based CP-PHOLED displays. PMID:27434383

  20. Metal complex polymers for electroluminescent applications

    SciTech Connect

    Tao, X.T.; Suzuki, H.; Zhang, Y.D.; Watanabe, T.; Miyata, S.; Wada, T.; Sasabe, H.

    1998-07-01

    The authors report the synthesis and characterization of a soluble metal complex polymer for electroluminescent (EL) applications. The polymer was prepared by the reaction of a zinc Schiff base with 4,4{prime}-diphenylmethane-diisocyanate. The polymer is amorphous and with glass transition temperature of 156 C and is soluble in common organic solvents such as chloroform, tetrahydrofuran (THF), and N-methylpyrrolidinone (NMP). The zinc Schiff base, and the polyurethane (PU) shows strong photoluminescence under a UV-lamp illumination. Single and double layer EL devices consisting ITO/hole transfer layer (HTL)/PU/AL have been fabricated and characterized. The results indicated that the complex polymer could act as both electron transport and emissive layers for EL devices.

  1. Synthesis of TPD-containing polymers for use as light-emitting materials in electroluminescent and laser devices

    NASA Astrophysics Data System (ADS)

    Hoerhold, Hans-Heinrich; Tillmann, Hartwig; Raabe, Dietrich; Helbig, Manfred; Elflein, Wilhelm; Braeuer, Andreas H.; Holzer, Wolfgang; Penzkofer, Alfons

    2001-02-01

    The synthesis of two families of electrically active and highly luminescent TPD-based copolymers is reported. (1) The Horner-olefination between TPD-dialdehydes and xylylene bisphosphonates has been used to prepare red and green emitting conjugated TPD-PPV copolymers 1 - 4. Here the TPD (triphenylamine dimer) moieties are brigded through alkoxy- substituted p-phenylene vinylene segments. (2) Blue emitting, nonconjugated TPD-xylylene copolymers (Poly-TPD- DPX 5, (6) have been synthesized by an electrophilic aralkylation using diphenylxylylene diol and TPD as the monomers. All these TPD-copolymers constitute amorphous electro-optical materials possessing remarkably high glass transition temperatures (Tg 110 - 240 degrees Celsius). Here we demonstrate strong lasing in the red, green and blue spectral region employing thin layers (approximately 100 nm) of these solution processable polymeric materials. In waveguiding neat films traveling-wave lasing (amplified spontaneous emission -- ASE) is achieved upon picosecond pulse excitation at 347 nm. Pump energy density thresholds as low as 3 (mu) J/cm2 and ASE-line halfwidths approximately 10 nm have been observed. Comparable to the typical redox behavior of free TPD molecule the novel TPD- based polymers exhibit fully reversible electron transfer at low potential (EOx approximately 0.65 V), which is favorable for hole injection and stable charge transport in the semiconducting organic materials. In addition, these high-Tg polymers can act as the electro-active materials in LEDs, photovoltaic cells and photorefractive devices. The waveguiding properties of Poly-TPD-DPX were determined in planar and strip waveguides to be 12 dB/cm at 640 nm, and 2 dB/cm at 1550 nm.

  2. Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Bo; Li, Yong; Yan, Ling-Ling; Li, Xin-Jian

    2015-10-01

    A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ˜10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage. Project supported by the National Natural Science Foundation of China (Grant No. 61176044).

  3. Electroluminescence from self-organized ``microdomes''

    NASA Astrophysics Data System (ADS)

    Karthaus, Olaf; Adachi, Chihaya; Kurimura, Shigeya; Oyamada, Takahito

    2004-06-01

    The preparation of a self-organized, microstructured organic electroluminescent device is reported. A dewetting process is used to form (sub)micrometer-sized dewetted patches ("domes") of a hole transport material (tolyl-phenyl-diaminobiphenyl, TPD) on an indium-tin-oxide electrode. The domes are regular in size and spacing. Evaporation of an electron transport material (tris-8-hydroxyquinoline aluminum, Alq3) and an Mg/Ag top electrode leads to a device with electroluminescing spots of micrometer dimensions and a spacing of a few micrometers.

  4. Influence of Dopant Concentration on Electroluminescent Performance of Organic White-Light-Emitting Device with Double-Emissive-Layered Structure

    NASA Astrophysics Data System (ADS)

    Wu, Xiao-Ming; Hua, Yu-Lin; Yin, Shou-Gen; Zhang, Li-Juan; Wang, Yu; Hou, Qing-Chuan; Zhang, Jun-Mei

    2008-01-01

    A novel phosphorescent organic white-light-emitting device (WOLED) with configuration of ITO/NPB/CBP:TBPe:rubrene/Zn(BTZ)2:Ir(piq)2(acac)/Zn(BTZ)2/Mg:Ag is fabricated successfully, where the phosphorescent dye bis (1-(phenyl)isoquinoline) iridium (III) acetylanetonate (Ir(piq)2(acac)) doped into bis-(2-(2-hydroxyphenyl) benzothiazole)zinc (Zn(BTZ)2) (greenish-blue emitting material with electron transport character) as the red emitting layer, and fluorescent dye 2,5,8,11-tetra-tertbutylperylene (TBPe) and 5,6,11,12-tetraphenyl-naphthacene (rubrene) together doped into 4,4'-N,N'-dicarbazole-biphenyl (CBP) (ambipolar conductivity material) as the blue-orange emitting layer, respectively. The two emitting layers are sandwiched between the hole-transport layer N,N'-biphenyl-N, N'-bis (1-naphthyl)-(1,1'-biphenyl)-4,4'-diamine (NPB) and electron-transport layer (Zn(BTZ)2). The optimum device turns on at the driving voltage of 4.5 V. A maximum external quantum efficiency of 1.53% and brightness 15000 cd/m2 are presented. The best point of the Commission Internationale de l'Eclairage (CIE) coordinates locates at (0.335, 0.338) at about 13 V. Moreover, we also discuss how to achieve the bright pure white light through optimizing the doping concentration of each dye from the viewpoint of energy transfer process.

  5. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    NASA Astrophysics Data System (ADS)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (<100 meV), and thus allows RISC at ambient temperature. We found that the EL emission in OLED based on the exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  6. Electroluminescent Displays Made With Alternative Dopants

    NASA Technical Reports Server (NTRS)

    Robertson, James B.

    1993-01-01

    Metals and metal fluorides deposited in ZnS to form color phosphors. Single-layer, thin-film electroluminescent display device contains ZnS host layer doped to form green, red, and blue phosphors. Luminescence in chosen colors at chosen intersections between rows and columns produced by application of voltages to appropriate row-and-column pairs of conductors.

  7. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

    PubMed Central

    2012-01-01

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal–semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future. PMID:22501032

  8. Field-effect electroluminescence in silicon nanocrystals.

    PubMed

    Walters, Robert J; Bourianoff, George I; Atwater, Harry A

    2005-02-01

    There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign. PMID:15665836

  9. Electroluminescence enhancement in blue phosphorescent organic light-emitting diodes based on different hosts

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Zhang, Fang-hui; Huang, Jin; Zhang, Mai-li; Ma, Ying

    2013-09-01

    Blue phosphorescent organic light-emitting diodes (OLEDs) are fabricated by utilizing the hole transport-type host material of 1,3-bis(carbazol-9-yl)benzene (MCP) combined with the electron transport-type host material of 1,3-bis (triphenylsilyl) benzene (UGH3) with the ratios of 1:0, 8:2 and 6:4, and doping with blue phosphorescent dopant of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium (FIrpic). The device with an optimum concentration proportion of MCP:UGH3 of 8:2 exhibits the maximum current efficiency of 19.18 cd/A at luminance of 35.71 cd/m2 with maintaining Commission Internationale de L'Eclairage (CIE) coordinates of (0.1481, 0.2695), which is enhanced by 35.7% compared with that of 1:0 with (0.1498, 0.2738). The improvements are attributed to the effective carrier injection and transport in emitting layer (EML) because of mixed host materials. In addition, electron and exciton are confined in the EML, and 4,4',4″-Tris(carbazol-9-yl)-triphenylamine (TCTA) and Di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane (TAPC) have the high lowest unoccupied molecular orbital (LUMO) energy level and triplet exiton energy.

  10. Electroluminescence from silicon nanowires

    NASA Astrophysics Data System (ADS)

    Huo, J.; Solanki, R.; Freeouf, J. L.; Carruthers, J. R.

    2004-12-01

    Room temperature electroluminescence has been demonstrated from undoped silicon nanowires that were grown from disilane. Ensembles of nanowires were excited by capacitively coupling them to an ac electric field. The emission peak occurred at about 600 nm from wires of average diameter of about 4 nm. The emission appears to result from band-to-band electron-hole recombination.

  11. ZnCdMgSe-Based Semiconductors for Intersubband Devices

    SciTech Connect

    Tamargo, Maria C.

    2008-11-13

    This paper presents a review of recent results on the application of ZnCdMgSe-based wide bandgap II-VI compounds to intersubband devices such as quantum cascade lasers and quantum well infrared photodetectors operating in the mid-infrared region. The conduction band offset of ZnCdSe/ZnCdMgSe quantum well structures was determined from contactless electroreflectance measurements to be as high as 1.12 eV. FT-IR was used to measure intersubband absorption in multi-quantum well structures in the mid-IR range. Electroluminescence at 4.8 {mu}m was observed from a quantum cascade emitter structure made from these materials. Preliminary results are also presented on self assembled quantum dots of CdSe on ZnCdMgSe, and novel quantum well structures with metastable binary MgSe barriers.

  12. Sputtered Zn{sub 1-x}Ga{sub 2}O{sub 4}:Mn thin-film electroluminescent devices prepared using cadmium-assisted processing

    SciTech Connect

    Flynn, M.; Kitai, A.H.

    2005-05-01

    Incorporating cadmium in the sputtering targets used to grow green-emitting zinc gallate doped with manganese is found to provide improvements in crystallinity, photoluminesience (PL), and electroluminescence (EL) performance, while reducing the annealing temperature requirements. It is shown that as-grown thin films do contain cadmium. The cadmium is then lost during thin-film annealing. The effect of cadmium is interpreted as an enhancement in vacancy concentration during the thin-film annealing process, which improves crystallinity, EL, and PL. X-ray diffraction and microscopy results are carefully studied and discussed.

  13. [Photoluminescent and electroluminescent properties of a new rare earth terbium complex].

    PubMed

    Wang, Li; Zhang, Xi-qing; Lin, Peng; Xiong, De-pin; Huang, Shi-hua; Yu, Tian-zhi

    2004-06-01

    Pure green and narrowbandwidth emission from an organic electroluminescent device was presented by using arare earth terbium (III) complex as the emissive layer. The structure of the device was ITO/PVK/Tb/PBD/LiF/Al. It was proved that this new kind of rare earth complex has excellent photoluminescent and electroluminescent properties. The electroluminescent spectrum of the device was very similar to that of the terbium (III) complex film. The electroluminescent mechanism of the device was proposed by measuring and analyzing the spectra and electroluminescent property of the device. It is proposed that the excited carriers of PVK and PBD were captured by Tb3+ and light was emitted when the electrons and holes recombined at Tb3+. PMID:15766172

  14. Efficient blue electroluminescence from a fluorinated polyquinoline

    NASA Astrophysics Data System (ADS)

    Parker, I. D.; Pei, Q.; Marrocco, M.

    1994-09-01

    High efficiency blue electroluminescence is demonstrated from a polyquinoline ether, a new class of soluble, electroluminescent, polyaromatic polymer. Multilayer devices (consisting of hole and electron transport layers in addition to the emissive polyquinoline layer) show an internal quantum efficiency in excess of 4% at 450 nm. Light emitted from these devices is easily visible in room light with luminence levels of 30 cd/m2 at 55 V with a current density of 9 mA/cm2. The transport layers are shown to serve a dual function—to modify the carrier injection properties and to block passage of carriers of the opposite polarity thereby trapping carriers in the emissive layer.

  15. Electroluminescence from colloidal semiconductor CdSe nanoplatelets in hybrid organic-inorganic light emitting diode

    NASA Astrophysics Data System (ADS)

    Vitukhnovsky, A. G.; Lebedev, V. S.; Selyukov, A. S.; Vashchenko, A. A.; Vasiliev, R. B.; Sokolikova, M. S.

    2015-01-01

    We report on the fabrication of a hybrid light-emitting-diode based on colloidal semiconductor CdSe nanoplatelets as emitters and organic TAZ [3-(Biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] and TPD [N, N‧-bis (3-methylphenyl)-N, N‧-bis (phenyl)-benzidine] materials as the electron and hole transporting layers. Electroluminescent and current-voltage characteristics of the developed hybrid device with the turn-on voltage of 5.5 V and the radiation wavelength of 515 nm have been obtained. Semiconductor nanoplatelets like CdSe are attractive for the fabrication of hybrid LEDs with low operating voltages, spectrally pure color and short-wavelength electroluminescence, which is required for RGB devices.

  16. Asphaltene based photovoltaic devices

    DOEpatents

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  17. Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

    SciTech Connect

    Gurin, N. T. Sabitov, O. Yu.; Afanas'ev, A. M.

    2007-10-15

    A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer.

  18. White-blue electroluminescence from a Si quantum dot hybrid light-emitting diode

    SciTech Connect

    Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi

    2015-05-18

    A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6 V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

  19. Carbon based prosthetic devices

    SciTech Connect

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T.; Klawitter, J.J.; Ogilvie, W.; Strzepa, P.; Cook, S.D.

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  20. Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off

    SciTech Connect

    Gurin, N. T. Sabitov, O. Yu.

    2008-06-15

    Results of experimental study of decay of the current flowing through a thin-film electroluminescent MISIM structure indicate a bimolecular process of electron capture by the surface states of the anode interface. A two-stage model of the process is suggested. At the first stage, the impact Auger capture of hot electrons takes place. At the second stage, upon varying the field direction, the holes of the valence band generated due to tunnel emission from deep centers drift to this interface, where they recombine with electrons of deepest occupied surface states. The electron lifetime and rate of the surface capture of electrons as well as their dependences on excitation parameters are determined. The behavior of the time dependence of the instant internal quantum yield at the decay portion is interpreted.

  1. Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

    SciTech Connect

    Hofstetter, Daniel; Bour, David P.; Kirste, Lutz

    2014-06-16

    We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm{sup −1} (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

  2. Streamline-based microfluidic device

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  3. 2-(2-Hydroxyphenyl)benzimidazole-based four-coordinate boron-containing materials with highly efficient deep-blue photoluminescence and electroluminescence.

    PubMed

    Zhang, Zhenyu; Zhang, Houyu; Jiao, Chuanjun; Ye, Kaiqi; Zhang, Hongyu; Zhang, Jingying; Wang, Yue

    2015-03-16

    Two novel four-coordinate boron-containing emitters 1 and 2 with deep-blue emissions were synthesized by refluxing a 2-(2-hydroxyphenyl)benzimidazole ligand with triphenylborane or bromodibenzoborole. The boron chelation produced a new π-conjugated skeleton, which rendered the synthesized boron materials with intense fluorescence, good thermal stability, and high carrier mobility. Both compounds displayed deep-blue emissions in solutions with very high fluorescence quantum yields (over 0.70). More importantly, the samples showed identical fluorescence in the solution and solid states, and the efficiency was maintained at a high level (approximately 0.50) because of the bulky substituents between the boron atom and the benzimidazole unit, which can effectively separate the flat luminescent units. In addition, neat thin films composed of 1 or 2 exhibited high electron and hole mobility in the same order of magnitude 10(-4), as determined by time-of-flight. The fabricated electroluminescent devices that employed 1 or 2 as emitting materials showed high-performance deep-blue emissions with Commission Internationale de L'Eclairage (CIE) coordinates of (X = 0.15, Y = 0.09) and (X = 0.16, Y = 0.08), respectively. Thus, the synthesized boron-containing materials are ideal candidates for fabricating high-performance deep-blue organic light-emitting diodes. PMID:25714777

  4. Tunnel based spin injection devices for semiconductor spintronics

    NASA Astrophysics Data System (ADS)

    Jiang, Xin

    This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides

  5. Blue/pink/purple electroluminescence from metal–oxide–semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    NASA Astrophysics Data System (ADS)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal–oxide–semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)–Si–O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler–Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  6. Graphene based flexible electrochromic devices

    PubMed Central

    Polat, Emre O.; Balcı, Osman; Kocabas, Coskun

    2014-01-01

    Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics. PMID:25270391

  7. Graphene based flexible electrochromic devices

    NASA Astrophysics Data System (ADS)

    Polat, Emre O.; Balcı, Osman; Kocabas, Coskun

    2014-10-01

    Graphene emerges as a viable material for optoelectronics because of its broad optical response and gate-tunable properties. For practical applications, however, single layer graphene has performance limits due to its small optical absorption defined by fundamental constants. Here, we demonstrated a new class of flexible electrochromic devices using multilayer graphene (MLG) which simultaneously offers all key requirements for practical applications; high-contrast optical modulation over a broad spectrum, good electrical conductivity and mechanical flexibility. Our method relies on electro-modulation of interband transition of MLG via intercalation of ions into the graphene layers. The electrical and optical characterizations reveal the key features of the intercalation process which yields broadband optical modulation up to 55 per cent in the visible and near-infrared. We illustrate the promises of the method by fabricating reflective/transmissive electrochromic devices and multi-pixel display devices. Simplicity of the device architecture and its compatibility with the roll-to-roll fabrication processes, would find wide range of applications including smart windows and display devices. We anticipate that this work provides a significant step in realization of graphene based optoelectronics.

  8. [Green electroluminescence generated from a new rare earth complex: Tb(asprin)3phen].

    PubMed

    Duan, N; Zhang, X; Gao, X; Liu, S; Xu, X; Tao, D; Xu, Y; Wu, J

    2001-06-01

    Pure Green and narrow bandwidth emission from organic electroluminescent device was presented by using a new rare earth complex Tb(asprin)3phen as emissive layer. The structure of the device was ITO/PVK:Tb(asprin)3phen/Al, where PVK was used to improve the film-forming ability and conductivity of Tb(asprin)3phen. The electroluminescent property of the device was studied. It proved that this new kind of rare earth complex has excellent optoluminescent and electroluminescent properties. The electroluminescent mechanism of the device was proposed by measuring and analyzing the emission and excitation spectra of the emissive layer. The excitation spectrum of Tb(asprin)3phen-dispersed PVK film was very similar to that of the PVK. We proposed that the excited carriers of PVK and Tb(asprin)3phen were captured by Tb3+ and light was emitted when the electrons and holes recombined at Tb3+. PMID:12947642

  9. Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence

    NASA Astrophysics Data System (ADS)

    Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

    2016-03-01

    We developed a direct experimental approach for investigating the correlation between efficiency droop and recombination rate variation under current injection conditions by using time-resolved electroluminescence (EL) technique. We applied this approach to understand the droop phenomenon of GaN-based light-emitting diodes grown on patterned sapphire substrates (LED-on-PAT) and planar sapphire substrates (LED-on-PLA). Because of lower dislocation density and current leakage in LED-on-PAT compared to LED-on-PLA, it was found that the effective carrier density injected into quantum wells (QWs) in LED-on-PAT was higher than that of the LED-on-PLA under the same current injection conditions, based on the analysis of spectral broadening of EL spectra with varying current injection and photoluminescence experiments under resonant and non-resonant excitation conditions. The efficiency droop in LED-on-PAT was found to be much more severe than that of LED-on-PLA, despite the higher overall quantum efficiency of LED-on-PAT. From the time-resolved EL analysis, we could separate radiative and non-radiative recombination contributions and directly observe (i) the decrease and saturation of radiative recombination time and (ii) the increase and following decrease in behavior of non-radiative recombination time with increasing current injection level, showing a strong correlation between efficiency droop and recombination rate variation.

  10. Enhancing the electroluminescence efficiency of Si NC/SiO2 superlattice-based light-emitting diodes through hydrogen ion beam treatment.

    PubMed

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chen, Shao-Ping; Shih, Chuan-Feng

    2016-03-24

    This paper presents a novel method for enhancing the electroluminescence (EL) efficiency of ten-period silicon-rich oxide (SRO)/SiO2 superlattice-based light-emitting diodes (LEDs). A hydrogen ion beam (HIB) was used to irradiate each SRO layer of the superlattices to increase the interfacial roughness on the nanoscale and the density of the Si nanocrystals (Si NCs). Fowler-Nordheim (F-N) tunneling was the major mechanism for injecting the carriers into the Si NCs. The barrier height of the F-N tunneling was lowered by forming a nano-roughened interface and the nonradiative Pb centers were passivated through the HIB treatment. Additionally, the reflectance of the LEDs was lowered because of the nano-roughened interface. These factors considerably increased the slope efficiency of EL and the maximum output power of the LEDs. The lighting efficiency increased by an order of magnitude, and the turn-on voltage decreased considerably. This study established an efficient approach for obtaining bright Si NC/SiO2 superlattice-based LEDs. PMID:26965185

  11. Enhancing the electroluminescence efficiency of Si NC/SiO2 superlattice-based light-emitting diodes through hydrogen ion beam treatment

    NASA Astrophysics Data System (ADS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chen, Shao-Ping; Shih, Chuan-Feng

    2016-03-01

    This paper presents a novel method for enhancing the electroluminescence (EL) efficiency of ten-period silicon-rich oxide (SRO)/SiO2 superlattice-based light-emitting diodes (LEDs). A hydrogen ion beam (HIB) was used to irradiate each SRO layer of the superlattices to increase the interfacial roughness on the nanoscale and the density of the Si nanocrystals (Si NCs). Fowler-Nordheim (F-N) tunneling was the major mechanism for injecting the carriers into the Si NCs. The barrier height of the F-N tunneling was lowered by forming a nano-roughened interface and the nonradiative Pb centers were passivated through the HIB treatment. Additionally, the reflectance of the LEDs was lowered because of the nano-roughened interface. These factors considerably increased the slope efficiency of EL and the maximum output power of the LEDs. The lighting efficiency increased by an order of magnitude, and the turn-on voltage decreased considerably. This study established an efficient approach for obtaining bright Si NC/SiO2 superlattice-based LEDs.

  12. Cotton-based diagnostic devices.

    PubMed

    Lin, Shang-Chi; Hsu, Min-Yen; Kuan, Chen-Meng; Wang, Hsi-Kai; Chang, Chia-Ling; Tseng, Fan-Gang; Cheng, Chao-Min

    2014-01-01

    A good diagnostic procedure avoids wasting medical resources, is easy to use, resists contamination, and provides accurate information quickly to allow for rapid follow-up therapies. We developed a novel diagnostic procedure using a "cotton-based diagnostic device" capable of real-time detection, i.e., in vitro diagnostics (IVD), which avoids reagent contamination problems common to existing biomedical devices and achieves the abovementioned goals of economy, efficiency, ease of use, and speed. Our research reinforces the advantages of an easy-to-use, highly accurate diagnostic device created from an inexpensive and readily available U.S. FDA-approved material (i.e., cotton as flow channel and chromatography paper as reaction zone) that adopts a standard calibration curve method in a buffer system (i.e., nitrite, BSA, urobilinogen and uric acid assays) to accurately obtain semi-quantitative information and limit the cross-contamination common to multiple-use tools. Our system, which specifically targets urinalysis diagnostics and employs a multiple biomarker approach, requires no electricity, no professional training, and is exceptionally portable for use in remote or home settings. This could be particularly useful in less industrialized areas. PMID:25393975

  13. FIrpic: archetypal blue phosphorescent emitter for electroluminescence.

    PubMed

    Baranoff, Etienne; Curchod, Basile F E

    2015-05-14

    FIrpic is the most investigated bis-cyclometallated iridium complex in particular in the context of organic light emitting diodes (OLEDs) because of its attractive sky-blue emission, high emission efficiency, and suitable energy levels. In this Perspective we review the synthesis, structural characterisations, and key properties of this emitter. We also survey the theoretical studies and summarise a series of selected monochromatic electroluminescent devices using FIrpic as the emitting dopant. Finally we highlight important shortcomings of FIrpic as an emitter for OLEDs. Despite the large body of work dedicated to this material, it is manifest that the understanding of photophysical and electrochemical processes are only broadly understood mainly because of the different environment in which these properties are measured, i.e., isolated molecules in solvent vs. device. PMID:25388935

  14. Bolometric Device Based on Fluxoid Quantization

    NASA Technical Reports Server (NTRS)

    Bonetti, Joseph A.; Kenyon, Matthew E.; Leduc, Henry G.; Day, Peter K.

    2010-01-01

    The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

  15. Growth and characterization of silicon-based optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Filios, Adam A.

    layers sandwiched between monolayers of oxygen. The key for its fabrication is that epitaxial growth of silicon may be continued beyond the interruption with exposure to oxygen. Prepared by an Ultra High Vacuum (UHV), Molecular Beam Epitaxial (MBE) technique, the multilayer device is extremely stable and robust, and can be readily integrated with conventional silicon VLSI processing. In addition, it exhibits bright, room temperature, visible photoluminescent and electroluminescent emission, at least as strong as that of porous silicon. With its efficient light emission, robustness and stability, the c-Si/O superlattice may hold the promise of a truly integrated silicon-based optoelectronic device.

  16. Fast pulsed electroluminescence from polymer light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, J.; Sun, R. G.; Yu, G.; Heeger, A. J.

    2002-02-01

    Transient electroluminescence (EL) from polymer light emitting diodes is investigated by measurements of the response to short voltage pulses. The carrier mobility is derived from the delay time between the electrical pulse and the onset of EL, μ≈3×10-4 cm2/V s. Bilayer devices with a polyethylene-dioxythiophene (PEDOT), hole injection layer are also studied. The delay time between the electrical pulse and the onset of EL is independent of the thickness of the injection layer, implying that the conducting PEDOT functions as a part of the electrode. When a dc forward bias is applied to the device, the delay time decreases, probably as a result of the shift of the emission zone towards the anode. The EL turn-on depends on the amplitude of the voltage pulse. The data are modeled by an equivalent circuit with a fixed capacitance connected in parallel with a nonlinear resistance. The solution of the differential equation depends on the exact form of the device's I-V curve. Two analytical solutions are provided, and an analysis based on space-charge-limited current is presented. By applying a dc forward bias in advance to precharge the space-charge capacitance, the turn-on response time is reduced to 12 ns. The EL decay consists of two components with time constants of 15 ns and 1 μs. The decay does not depend on either the amplitude of the voltage pulse or the prebias.

  17. Photolithographically patternable electroluminescent liquid crystalline materials for full-colour organic light emitting displays

    NASA Astrophysics Data System (ADS)

    McGlashon, Andrew J.; Whitehead, Katherine S.; Bradley, Donal D. C.; Heeney, Martin; McCulloch, Iain; Zhang, Weimin; Campbell, Alasdair J.

    2006-02-01

    Displays based on polymer light emitting diodes are attractive due to their emissive nature, their wide viewing angles and the ability of electroluminescent conjugated polymers to be solution processable at room temperature and pressure. It is difficult, however, to deposit separate red, green and blue (RGB) pixels and to maximize performance by making the devices multi-layered. Here we present recent results on a semiconducting conjugated reactive-mesogen OLED material which is solution processable, can be potentially cured and patterned by photolithography and used in multi-layer devices. This material consists of a conjugated pentathiophene core with reactive endgroups. Spectroscopy, calorimetry and microscopy show that it forms crystalline, aggregate, liquid-crystalline and isotropic phases at a range of different temperatures. The material is deposited by spincoating from solution. Low density doping with a cationic photointiator and exposure to a specific UV wavelength to avoid damage to the conjugated core leads to cross-linking into an insoluble network. Current-voltage-luminousity and spectral measurements in standard OLED device structures show the effect of cross-linking on the transport and injection properties of the material. Quenching of fluorescence and electroluminescence is discussed. Insertion of lower-energy gap, fluorescent small molecules can potentially be used to tune the emission to any desired colour but material limitations to this technique due to dopant removal during the washing procedure were observed.

  18. Identifying the efficient inter-conversion between singlet and triplet charge-transfer states by magneto-electroluminescence study

    NASA Astrophysics Data System (ADS)

    Chen, Ping; Peng, Qiming; Yao, Liang; Gao, Na; Li, Feng

    2013-02-01

    Using the magneto-electroluminescence (MEL) as a tool, we demonstrated the efficient inter-conversion between singlet and triplet charge-transfer (CT) states in exciplex-based organic light-emitting diodes (OLEDs). Results show that the MEL of exciplex-based device is larger than that of exciton-based device by a factor of 3.2. The emission of exciplex-based devices comes from the direct intermolecular electron-hole pair recombination and their spin exchange energy is much smaller, which causes the efficient inter-conversion between singlet and triplet states. This argument was supported by the consistent evolutions of the MEL and EL spectra versus applied bias and donor concentrations. Finally, the bandgap effects on the MEL as well as the external quantum efficiency of exciplex-based devices were discussed. Our findings of MEL may offer a feasible way to unravel underlying mechanisms that limit the EL efficiency in the OLEDs.

  19. High performance organic ultraviolet photodetector with efficient electroluminescence realized by a thermally activated delayed fluorescence emitter

    NASA Astrophysics Data System (ADS)

    Wang, Xu; Zhou, Dianli; Huang, Jiang; Yu, Junsheng

    2015-07-01

    A high performance organic ultraviolet (UV) photodetector with efficient electroluminescence (EL) was obtained by using a thermally activated delayed fluorescence (TADF) emitter of (4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN). An exciton adjusting layer (EAL) was delicately designed to construct an energy-level-aligned heterojunction with 4CzIPN. As a result, the bi-functional device exhibited a high detectivity of 1.4 × 1012 Jones under 350 nm UV light. Moreover, our device exhibited efficient EL emission utilizing the merit of reverse intersystem crossing process from triplet to singlet excitons of 4CzIPN, showing a maximum luminance, current efficiency, and power efficiency of 26370 cd/m2, 8.2 cd/A, and 4.9 lm/W, respectively. This work arouses widespread interest in constructing efficient bi-functional device based on TADF emitter and EAL structure.

  20. Resistive Switching Memory Devices Based on Proteins.

    PubMed

    Wang, Hong; Meng, Fanben; Zhu, Bowen; Leow, Wan Ru; Liu, Yaqing; Chen, Xiaodong

    2015-12-01

    Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials. PMID:25753764

  1. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  2. Interband cascade light emitting devices based on type-II quantum wells

    SciTech Connect

    Yang, Rui Q.; Lin, C.H.; Murry, S.J.

    1997-06-01

    The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 {mu}m).

  3. Polymer and small molecule based hybrid light source

    DOEpatents

    Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

    2010-03-16

    An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

  4. Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection

    NASA Astrophysics Data System (ADS)

    Wang, Qin; Savage, Susan; Persson, Sirpa; Noharet, Bertrand; Junique, Stéphane; Andersson, Jan Y.; Liuolia, Vytautas; Marcinkevicius, Saulius

    2009-02-01

    We have demonstrated surface normal detecting/filtering/emitting multiple functional ultraviolet (UV) optoelectronic devices based on InGaN/GaN, InGaN/AlGaN and AlxGa1-xN/AlyGa1-yN multiple quantum well (MQW) structures with operation wavelengths ranging from 270 nm to 450 nm. Utilizing MQW structure as device active layer offers a flexibility to tune its long cut-off wavelength in a wide UV range from solar-blind to visible by adjusting the well width, well composition and barrier height. Similarly, its short cut-off wavelength can be adjusted by using a GaN or AlGaN block layer on a sapphire substrate when the device is illuminated from its backside, which further provides an optical filtering effect. When a current injects into the device under forward bias the device acts as an UV light emitter, whereas the device performs as a typical photodetector under reverse biases. With applying an alternating external bias the device might be used as electroabsorption modulator due to quantum confined Stark effect. In present work fabricated devices have been characterized by transmission/absorption spectra, photoresponsivity, electroluminescence, and photoluminescence measurements under various forward and reverse biases. The piezoelectric effect, alloy broadening and Stokes shift between the emission and absorption spectra in different InGaN- and AlGaN-based QW structures have been investigated and compared. Possibilities of monolithic or hybrid integration using such multiple functional devices for biological warfare agents sensing application have also be discussed.

  5. Variably spaced superlattice energy filter, a new device design concept for high-energy electron injection

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Brennan, K. F.

    1986-01-01

    A new variably spaced superlattice energy filter is proposed which provides high-energy injection of electrons into a bulk semiconductor layer based on resonant tunneling between adjacent quantum well levels which are brought into alignment by an applied bias. Applications of this concept to a variety of optoelectronic devices and to thin-film electroluminescent devices and photodetectors are discussed.

  6. Effect of dye concentrations in blended-layer white organic light-emitting devices based on phosphorescent dyes

    NASA Astrophysics Data System (ADS)

    Pearson, C.; Cadd, D. H.; Petty, M. C.; Hua, Y. L.

    2009-09-01

    The electronic and optoelectronic behavior of white organic light-emitting devices (OLEDs) based on blue (FIrpic) and red [Ir(piq)2(acac)] phosphorescent dyes doped into the same layer of a polyvinylcarbazole (PVK) host are reported. The conductivity of all the OLEDs studied appeared to be dominated by space-charge injection effects, exhibiting a current I versus voltage V dependence of the form I ∝Vn, with n ≈7 at applied voltages at which electroluminescence was observed. Systematic studies of the current versus voltage and light-emitting behavior of the OLEDs have identified different excitation processes for the two dyes. It is suggested that electroluminescence from the FIrpic molecules originates by direct transfer of the exciton energy from the PVK to the dye molecules, while the process of light emission from the Ir(piq)2(acac) molecules involves carrier trapping. The efficiency of the devices can be tuned, to some extent, by varying the thickness of the organic film. Luminous efficiencies and luminous power efficiencies of 8 cd A-1 and 3 lm W-1 were measured for these blended-layer OLEDs, with Commission Internationale de l'Eclairage coordinates of 0.35, 0.35.

  7. Electroluminescence property of a novel dendritic polyfluorene derivative containing a triphenylamine group

    NASA Astrophysics Data System (ADS)

    Li, Fushan; Chen, Zhijian; Qu, Bo; Wei, Wei; Gong, Qihuang

    2005-03-01

    A novel dendritic polyfluorene derivative containing triphenylamine, poly((9,9-dibutyl-2,7-diiodo-9H-fluorene)trisphenylamine) (PDFA) was synthesized by the Ni(0)-catalysed reaction of 9,9-dibutyl-2,7-diiodo-9H-fluorene and tris-(4-iodo-phenyl)-amine. PDFA has many advantages compared with polyfluorene (PF). It enhances the hole-injecting and transporting capabilities and the dendritic structure significantly, reduces aggregation and enhances the thermal stability. Single- and double-layer LED devices using PDFA showed a maximum luminescence intensity and quantum efficiency that was almost twice that of the device based on PF (poly(9,9-dibutyl)fluorene) and the emission colour was closer to standard blue. The experimental results indicated that the incorporation of the hole-transporting triphenylamine group into PF may provide a means of improving the thermal and electroluminescence characteristics of organic light-emitting diodes.

  8. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    SciTech Connect

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang Zhang, Zhenru; Zeng, Cen; Xu, Shengang; Cao, Shaokui

    2015-10-15

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGs are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.

  9. The potential dependence of porous silicon electroluminescence

    SciTech Connect

    Riley, D.J.; Peter, L.M.; Wielgosz, R.I.

    1996-10-01

    The observation of visible luminescence from porous silicon has resulted in strong interest in this material. It has been demonstrated that the electrochemical reduction of persulfate ions at a porous silicon electrode/electrolyte interface may lead to intense luminescence (electroluminescence). Further, it has been found that the intensity and wavelength of the electroluminescence is potential dependent, this phenomenon is termed {open_quotes}potential tuning{close_quotes}. This paper is concerned with the elucidation of the mechanism of electroluminescence potential tuning. It will be shown that the process is related to the particle size distribution and the dynamics of electron transfer between the bulk silicon substrate, the surface silicon nanocrystals and the electrolyte. Further, the results of combined in-situ FTIR and electroluminescence studies will be reported. The influence of surface chemistry on the electroluminescence will be discussed with reference to the proposed {open_quotes}tuning{close_quotes} mechanism.

  10. Carbon Nanotubes Based Quantum Devices

    NASA Technical Reports Server (NTRS)

    Lu, Jian-Ping

    1999-01-01

    This document represents the final report for the NASA cooperative agreement which studied the application of carbon nanotubes. The accomplishments are reviewed: (1) Wrote a review article on carbon nanotubes and its potentials for applications in nanoscale quantum devices. (2) Extensive studies on the effects of structure deformation on nanotube electronic structure and energy band gaps. (3) Calculated the vibrational spectrum of nanotube rope and the effect of pressure. and (4) Investigate the properties of Li intercalated nanotube ropes and explore their potential for energy storage materials and battery applications. These studies have lead to four publications and seven abstracts in international conferences.

  11. Adaptive Device Context Based Mobile Learning Systems

    ERIC Educational Resources Information Center

    Pu, Haitao; Lin, Jinjiao; Song, Yanwei; Liu, Fasheng

    2011-01-01

    Mobile learning is e-learning delivered through mobile computing devices, which represents the next stage of computer-aided, multi-media based learning. Therefore, mobile learning is transforming the way of traditional education. However, as most current e-learning systems and their contents are not suitable for mobile devices, an approach for…

  12. Quantitative analysis of electroluminescence images from polymer solar cells

    NASA Astrophysics Data System (ADS)

    Seeland, Marco; Rösch, Roland; Hoppe, Harald

    2012-01-01

    We introduce the micro-diode-model (MDM) based on a discrete network of interconnected diodes, which allows for quantitative description of lateral electroluminescence emission images obtained from organic bulk heterojunction solar cells. Besides the distributed solar cell description, the equivalent circuit, respectively, network model considers interface and bulk resistances as well as the sheet resistance of the semitransparent electrode. The application of this model allows direct calculation of the lateral current and voltage distribution within the solar cell and thus accounts well for effects known as current crowding. In addition, network parameters such as internal resistances and the sheet-resistance of the higher resistive electrode can be determined. Furthermore, upon introduction of current sources the micro-diode-model also is able to describe and predict current-voltage characteristics for solar cell devices under illumination. The local nature of this description yields important conclusions concerning the geometry dependent performance and the validity of classical models and equivalent circuits describing thin film solar cells.

  13. Antimonide based devices for thermophotovoltaic applications

    SciTech Connect

    Hitchcock, C.W.; Gutmann, R.J.; Borrego, J.M.; Bhat, I.B.; Charache, G.W.

    1998-12-01

    Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE. Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base, n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts. Diffused junction devices using quasi-binary substrates offer the possibility of good performance and low manufacturing cost.

  14. Polymer-based electrocaloric cooling devices

    DOEpatents

    Zhang, Qiming; Lu, Sheng-Guo; Li, Xinyu; Gorny, Lee; Cheng, Jiping; Neese, Bret P; Chu, Baojin

    2014-10-28

    Cooling devices (i.e., refrigerators or heat pumps) based on polymers which exhibit a temperature change upon application or removal of an electrical field or voltage, (e.g., fluoropolymers or crosslinked fluoropolymers that exhibit electrocaloric effect).

  15. Biomaterials-Based Organic Electronic Devices

    PubMed Central

    Bettinger, Christopher J.; Bao, Zhenan

    2010-01-01

    Organic electronic devices have demonstrated tremendous versatility in a wide range of applications including consumer electronics, photovoltaics, and biotechnology. The traditional interface of organic electronics with biology, biotechnology, and medicine occurs in the general field of sensing biological phenomena. For example, the fabrication of hybrid electronic structures using both organic semiconductors and bioactive molecules has led to enhancements in sensitivity and specificity within biosensing platforms, which in turn has a potentially wide range of clinical applications. However, the interface of biomolecules and organic semiconductors has also recently explored the potential use of natural and synthetic biomaterials as structural components of electronic devices. The fabrication of electronically active systems using biomaterials-based components has the potential to realize a large set of unique devices including environmentally biodegradable systems and bioresorbable temporary medical devices. This article reviews recent advances in the implementation of biomaterials as structural components in organic electronic devices with a focus on potential applications in biotechnology and medicine. PMID:20607127

  16. Nucleic acid based molecular devices.

    PubMed

    Krishnan, Yamuna; Simmel, Friedrich C

    2011-03-28

    In biology, nucleic acids are carriers of molecular information: DNA's base sequence stores and imparts genetic instructions, while RNA's sequence plays the role of a messenger and a regulator of gene expression. As biopolymers, nucleic acids also have exciting physicochemical properties, which can be rationally influenced by the base sequence in myriad ways. Consequently, in recent years nucleic acids have also become important building blocks for bottom-up nanotechnology: as molecules for the self-assembly of molecular nanostructures and also as a material for building machinelike nanodevices. In this Review we will cover the most important developments in this growing field of nucleic acid nanodevices. We also provide an overview of the biochemical and biophysical background of this field and the major "historical" influences that shaped its development. Particular emphasis is laid on DNA molecular motors, molecular robotics, molecular information processing, and applications of nucleic acid nanodevices in biology. PMID:21432950

  17. Devices based on surface plasmon interference filters

    NASA Technical Reports Server (NTRS)

    Wang, Yu (Inventor)

    2001-01-01

    Devices based on surface plasmon filters having at least one metal-dielectric interface to support surface plasmon waves. A multi-layer-coupled surface plasmon notch filter is provided to have more than two symmetric metal-dielectric interfaces coupled with one another to produce a transmission spectral window with desired spectral profile and bandwidth. Such notch filters can form various color filtering devices for color flat panel displays.

  18. Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaO x -p-GaN heterojunction

    NASA Astrophysics Data System (ADS)

    Zhao, J. L.; Teo, K. L.; Zheng, K.; Sun, X. W.

    2016-03-01

    Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO x is employed as the intermediate layer and an n-ZnO-TaO x -p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

  19. Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

    PubMed

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-03-18

    Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. PMID:26878415

  20. Efficient near-infrared organic light-emitting devices based on low-gap fluorescent oligomers

    NASA Astrophysics Data System (ADS)

    Yang, Yixing; Farley, Richard T.; Steckler, Timothy T.; Eom, Sang-Hyun; Reynolds, John R.; Schanze, Kirk S.; Xue, Jiangeng

    2009-08-01

    We report efficient near-infrared (NIR) organic light-emitting devices (OLEDs) based on fluorescent donor-acceptor-donor conjugated oligomers. The energies of the highest occupied and lowest unoccupied molecular orbitals of these oligomers are controlled by the donor and acceptor components, respectively; hence the energy gap and therefore the emission wavelength can be tuned by changing the strengths of the donor and acceptor components. External quantum efficiencies (EQEs) up to 1.6% and power efficiencies up to 7.0 mW/W are achieved in NIR OLEDs based on 4,9-bis(2,3-dihydrothieno[3,4-b][1,4]dioxin-5-yl)-6,7-dimethyl-[1,2,5]thiadiazolo[3,4-g]-quinoxaline (BEDOT-TQMe2), in which the electroluminescence peaks at a wavelength of 692 nm but extends to well above 800 nm. With a stronger acceptor in the oligomer, 4,8-bis(2,3-dihydrothieno-[3,4-b][1,4]dioxin-5-yl)benzo[1,2-c;4,5-c']bis [1,2,5]thiadiazole (BEDOT-BBT) based devices show longer wavelength emission peaked at 815 nm, although the maximum EQE is reduced to 0.51% due to the lower fluorescent quantum yield of the NIR emitter. The efficiencies of these NIR OLEDs are further increased by two to three times by using the sensitized fluorescent device structure, leading to a maximum EQE of 3.1% for BEDOT-TQMe2 and 1.6% for BEDOT-BBT based devices.

  1. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    SciTech Connect

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso; Glick, Stephen; Kerekes, Tamas; Teodorescu, Remus

    2015-06-14

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module's electroluminescence intensity distribution, applied at module and cell level. These concepts are demonstrated on a crystalline silicon photovoltaic module that was subjected to several rounds of mechanical loading and humidity-freeze cycling, causing increasing levels of solar cell cracks. The proposed method can be used as a diagnostic tool to rate cell damage or quality of modules after transportation. Moreover, the method can be automated and used in quality control for module manufacturers, installers, or as a diagnostic tool by plant operators and diagnostic service providers.

  2. Electroluminescence in thin-film CaS:Ce

    NASA Astrophysics Data System (ADS)

    Shanker, Virendra; Tanaka, Shosaku; Shiiki, Masatoshi; Deguchi, Hiroshi; Kobayashi, Hiroshi; Sasakura, Hiroshi

    1984-11-01

    We report a double insulated CaS:Ce thin-film electroluminescent (EL) device which emits a bright green EL due to Ce3+ luminescent centers, being characteristic of parity allowed 5d-4f transitions. A brightness level of 500 cd/m2 and emission efficiency of 0.11 lm/W have been obtained under 5-kHz sinusoidal voltage excitation. The CaS:Ce thin film has been fabricated by coevaporation of CaS and sulfur.

  3. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Adam, Thomas; Kolodzey, James

    2013-06-01

    Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 μW at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 μm.

  4. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements.

    PubMed

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I-V relations of individual subcells without the need for referencing measured I-V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the "balance sheets" of tandem solar cells. PMID:25592484

  5. Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures

    SciTech Connect

    Terent'ev, Ya. V. Mukhin, M. S.; Solov'ev, V. A.; Semenov, A. N.; Meltser, B. Ya.; Usikova, A. A.; Ivanov, S. V.

    2010-08-15

    Photoluminescence and electroluminescence in InSb/InAs heterostructures with ultrathin InSb insertions grown by molecular-beam epitaxy have been systematically studied. Measurements were made in the temperature range from 2 to 300 K on a large set of samples of various designs, with both the InAs matrix and ultrathin InSb insertions grown by different methods. The primary goal of the study was to identify the main radiative recombination channels in these heterostructures. It is shown that optical transitions associated with acceptor impurity centers in the InAs matrix represent an important mechanism diminishing the efficiency of luminescence from InSb insertions at room temperature. The results obtained are important for development of optimal growth modes and design of the active region of light-emitting devices based on quantum-confined InSb/InAs structures emitting in the range 3-5 {mu}m.

  6. Photocurrent measurements of pentacene-based devices

    NASA Astrophysics Data System (ADS)

    Masurkar, Amrita; Kymissis, Ioannis

    2015-09-01

    Photocurrent spectroscopy (PCS) and photocurrent microscopy (PCM) are powerful tools that can probe the underlying mechanisms of charge generation and transport in organic semiconductor devices. There has been significant progress in the use of these techniques, which has yielded a number of insights into the underlying materials and operation of the devices. Despite the potential for PCS and PCM to become standard tools, however, a consensus has not been reached on (1) its uses and (2) the underlying mechanisms which produce the photoresponse. This is particularly true for measurements of pentacene devices, as the energy dynamics of pentacene are complex. Accordingly, here we report the current body of PCS and PCM of pentacene devices, offer interpretations of the data, and discuss which questions remain unanswered. We have divided the reviewed work into four categories based on the goals of the study and the technique used: photocurrent spectroscopy, scanning photocurrent microscopy, mobility, and trap density-of-states.

  7. Device-based Therapy for Hypertension.

    PubMed

    Ng, Fu L; Saxena, Manish; Mahfoud, Felix; Pathak, Atul; Lobo, Melvin D

    2016-08-01

    Hypertension continues to be a major contributor to global morbidity and mortality, fuelled by an abundance of patients with uncontrolled blood pressure despite the multitude of pharmacological options available. This may occur as a consequence of true resistant hypertension, through an inability to tolerate current pharmacological therapies, or non-adherence to antihypertensive medication. In recent years, there has been a rapid expansion of device-based therapies proposed as novel non-pharmacological approaches to treating resistant hypertension. In this review, we discuss seven novel devices-renal nerve denervation, baroreflex activation therapy, carotid body ablation, central iliac arteriovenous anastomosis, deep brain stimulation, median nerve stimulation, and vagal nerve stimulation. We highlight how the devices differ, the varying degrees of evidence available to date and upcoming trials. This review also considers the possible factors that may enable appropriate device selection for different hypertension phenotypes. PMID:27370788

  8. Green-Yellow Electroluminescence from a host-dopant blended system as the active layer in a bilayer polymer light emitting diode: Poly(n-vinyl carbazole) as the host and a new soluble thiophene based copolymer [poly(2,2‧-BT)-co-(3-DDT)] as the dopant

    NASA Astrophysics Data System (ADS)

    Shahalizad, Afshin; Ahmadi-Kandjani, Sohrab; Movla, Hossein; Omidi, Hafez; Massoumi, Bakhshali; Zakerhamidi, Mohammad Sadegh; Entezami, Ali Akbar

    2014-11-01

    A new type of bilayer Polymer Light Emitting Diode (PLED) which emits green-yellow light is reported. In this PLED, a novel thiophene-based copolymer [poly(2,2‧-BT)-co-(3-DDT)] with an excellent electron transporting property has been doped in hole transporting and electron blocking poly(n-vinylcarbazole) (PVK). Formation of type-II heterojunctions among nm-size features in PVK:poly(2,2‧-BT)-co-(3-DDT) blended system makes exciplex and electroplex emissions would be dominant in the Electroluminescence (EL) spectrum of the device. These cross recombinations between electrons in the LUMO of poly(2,2‧-BT)-co-(3-DDT) and holes in the HOMO of PVK is a reason for the low driving voltage of the PLED because there is no need for the charge carriers to hop or tunnel to the adjacent polymer. Morphological investigations demonstrate that the mixing degree between the components is high, favoring formation of exciplexes and electroplexes at the interface of the components.

  9. Neuroelectronic device based on nanocoax arrays

    NASA Astrophysics Data System (ADS)

    Naughton, Jeffrey R.; Lundberg, Jaclyn N.; Varela, Juan A.; Burns, Michael J.; Chiles, Thomas C.; Christianson, John P.; Naughton, Michael J.

    2015-03-01

    We report on development of a nanocoax-based neuroelectronic array. The device has been used in real time to noninvasively couple to a ganglion sac located along the main nerve cord of the leech Hirudo medicinalis. This allowed for extracellular recording of synaptic activity in the form of spontaneous synapse firing in pre- and post-synaptic somata, with the next target being recording of local field potentials from rat hippocampal cells. We also discuss an alteration of the architecture to facilitate optical integration of the nanoarray, toward utilizing the so-modified device to elicit / inhibit action potentials in optogenetically-modified cells.

  10. Red electroluminescence of ruthenium sensitizer functionalized by sulfonate anchoring groups.

    PubMed

    Shahroosvand, Hashem; Abbasi, Parisa; Mohajerani, Ezeddin; Janghouri, Mohammad

    2014-06-28

    We have synthesized five novel Ru(ii) phenanthroline complexes with an additional aryl sulfonate ligating substituent at the 5-position [Ru(L)(bpy)2](BF4)2 (1), [Ru(L)(bpy)(SCN)2] (2), [Ru(L)3](BF4)2 (3), [Ru(L)2(bpy)](BF4)2 (4) and [Ru(L)(BPhen)(SCN)2] (5) (where L = 6-one-[1,10]phenanthroline-5-ylamino)-3-hydroxynaphthalene 1-sulfonic, bpy = 2,2'-bipyridine, BPhen = 4,7-diphenyl-1,10-phenanthroline), as both photosensitizers for oxide semiconductor solar cells (DSSCs) and light emitting diodes (LEDs). The absorption and emission maxima of these complexes red shifted upon extending the conjugation of the phenanthroline ligand. Ru phenanthroline complexes exhibit broad metal to ligand charge transfer-centered electroluminescence (EL) with a maximum near 580 nm. Our results indicated that a particular structure (2) can be considered as both DSSC and OLED devices. The efficiency of the LED performance can be tuned by using a range of ligands. Device (2) has a luminance of 550 cd m(-2) and maximum efficiency of 0.9 cd A(-1) at 18 V, which are the highest values among the five devices. The turn-on voltage of this device is approximately 5 V. The role of auxiliary ligands in the photophysical properties of Ru complexes was investigated by DFT calculation. We have also studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phenanthroline complexes and an iodine redox electrolyte. A solar energy to electricity conversion efficiency (η) of 0.67% was obtained for Ru complex (2) under standard AM 1.5 irradiation with a short-circuit photocurrent density (Jsc) of 2.46 mA cm(-2), an open-circuit photovoltage (Voc) of 0.6 V, and a fill factor (ff) of 40%, which are all among the highest values for ruthenium sulfonated anchoring groups reported so far. Monochromatic incident photon to current conversion efficiency was 23% at 475 nm. Photovoltaic studies clearly indicated dyes with two SCN substituents yielded a higher Jsc for the

  11. Cellphone-based devices for bioanalytical sciences

    PubMed Central

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-01-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  12. Cellphone-based devices for bioanalytical sciences.

    PubMed

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-05-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This report aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  13. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

    SciTech Connect

    Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick; Jones, Eric Daniel; Cich, Michael Joseph; Allerman, Andrew Alan; Peake, Gregory Merwin

    2003-12-01

    The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

  14. Quasi-Fermi level splitting evaluation based on electroluminescence analysis in multiple quantum-well solar cells for investigating cell performance under concentrated light

    NASA Astrophysics Data System (ADS)

    Inoue, Tomoyuki; Toprasertpong, Kasidit; Delamarre, Amaury; Watanabe, Kentaroh; Paire, Myriam; Lombez, Laurent; Guillemoles, Jean-François; Sugiyama, Masakazu; Nakano, Yoshiaki

    2016-03-01

    Insertion of InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs) into i-regions of GaAs p-i-n solar cells show several advantages against GaAs bulk p-i-n solar cells. Particularly under high-concentration sunlight condition, enhancement of the open-circuit voltage with increasing concentration ratio in thin-barrier MQW cells has been reported to be more apparent than that in GaAs bulk cells. However, investigation of the MQW cell mechanisms in terms of I-V characteristics under high-concentration sunlight suffers from the increase in cell temperature and series resistance. In order to investigate the mechanism of the steep enhancement of open-circuit voltage in MQW cells under high-concentration sunlight without affected by temperature, the quasi-Fermi level splitting was evaluated by analyzing electroluminescence (EL) from a cell. Since a cell under current injection with a density Jinjhas similar excess carrier density to a cell under concentrated sunlight with an equivalent short-circuit current Jsc = Jinj, EL measurement with varied Jinj can approximately evaluate a cell performance under a variety of concentration ratio. In addition to the evaluation of quasi-Fermi level splitting, the external luminescence efficiency was also investigated with the EL measurement. The MQW cells showed higher external luminescence efficiency than the GaAs reference cells especially under high-concentration condition. The results suggest that since the MQW region can trap and confine carriers, the localized excess carriers inside the cells make radiative recombination more dominant.

  15. Carbon Based Transistors and Nanoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  16. Carbon-nanotube-based photonic devices

    NASA Astrophysics Data System (ADS)

    Yamashita, Shinji

    2007-11-01

    We recently proposed and demonstrated a saturable absorber (SA) incorporating carbon nanotube (CNT). CNT-based SA offers several key advantages such as: ultra-fast recovery time, polarization insensitivity, high optical damage threshold, mechanical and environmental robustness, chemical stability, and the ability to operate at wide range of wavelength bands. Using the CNT-based SA, we have realized femtosecond fiber pulsed lasers at various wavelengths, as well as the very short-cavity fiber laser having high repetition rate. Besides the saturable absorption, CNT has been shown to have high third-order nonlinearity, which is also attractive for realization of compact and integrated functional photonic devices, such as all-optical switches and wavelength converters. In this paper, we first present photonic properties of CNTs, and review our studies on CNT-based mode-locked fiber lasers. We also refer to fabrication methods of CNT-based photonic devices. We show our recent research progresses on novel photonic devices using evanescent coupling between optical field and CNT.

  17. Nonvolatile memory devices based on self-assembled nanocrystals

    NASA Astrophysics Data System (ADS)

    Lee, Jang-Sik

    2013-06-01

    Nonvolatile memory devices are one of the most important components in modern electronic devices. Many efforts have been made to fabricate high-density, low-cost, nonvolatile solid-state memory devices for use in portable/mobile electronic devices such as laptop computers, tablet devices, smart phones, etc. Among the many available nonvolatile memory devices, flash memory devices are of great interest to the electronics industry owing to their simple device structure, enabling high-density memory applications. Flash memory devices in which nanoparticles or nanocrystals are used as the charge-trapping elements have advantages over conventional flash memory devices because the charge-trapping layer and memory performance of the former can be readily optimized. Active research has recently been conducted to fabricate and characterize self-assembled-nanocrystal-based nonvolatile memory devices. We reviewed various strategies for fabricating nanocrystal-based nonvolatile memory devices and discussed the programmable memory properties and the device reliability characteristics of nanocrystal-based memory devices to possibly apply nanocrystal-based memory devices to those used in portable/mobile electronic devices. Finally, novel device applications such as printed/flexible/transparent electronic devices were explored based on nanocrystal-based memory devices.

  18. Phonon-assisted transient electroluminescence in Si

    SciTech Connect

    Cheng, Tzu-Huan; Chu-Su, Yu; Liu, Chien-Sheng; Lin, Chii-Wann

    2014-06-30

    The phonon-replica infrared emission is observed at room temperature from indirect band gap Si light-emitting diode under forward bias. With increasing injection current density, the broadened electroluminescence spectrum and band gap reduction are observed due to joule heating. The spectral-resolved temporal response of electroluminescence reveals the competitiveness between single (TO) and dual (TO + TA) phonon-assisted indirect band gap transitions. As compared to infrared emission with TO phonon-replica, the retarder of radiative recombination at long wavelength region (∼1.2 μm) indicates lower transition probability of dual phonon-replica before thermal equivalent.

  19. Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

    NASA Astrophysics Data System (ADS)

    Wenbo, Xiao; Xingdao, He; Yiqing, Gao; Zhimin, Zhang; Jiangtao, Liu

    2012-06-01

    The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions. An electroluminescence viewgraph shows the clear device structures, and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current. The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells. The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.

  20. Organic white-light-emitting devices based on a multimode resonant microcavity

    NASA Astrophysics Data System (ADS)

    Zhang, Hongmei; You, Han; Wang, Wei; Shi, Jiawei; Guo, Shuxu; Liu, Mingda; Ma, Dongge

    2006-08-01

    Organic white-light-emitting devices (OLEDs) based on a multimode resonant microcavity defined by a pair of dielectric mirrors and metal mirrors were presented. By selective effects of the quarter-wave dielectric stack mirror on mode, white light emission containing three individual narrow peaks of red, green and blue was achieved, and showed weak dependence on the viewing angle. The Commission Internationale De L'Eclairage (CIE) chromaticity coordinates changed from (0.29, 0.37) at 0° to (0.31, 0.33) at 40°. Furthermore, the brightness and electroluminescence efficiency of the microcavity OLEDs were enhanced compared with noncavity OLEDs. The maximum brightness reached 1940 cd m-2 at a current density of 200 mA cm-2, and the maximum current efficiency and power efficiency are 1.6 cd A-1 at a current density of 12 mA cm-2 and 0.41 lm W-1 at a current density of 1.6 mA cm-2, which are over 1.6 times higher than that of a noncavity OLED.

  1. Electrorheological Fluid Based Force Feedback Device

    NASA Technical Reports Server (NTRS)

    Pfeiffer, Charles; Bar-Cohen, Yoseph; Mavroidis, Constantinos; Dolgin, Benjamin

    1999-01-01

    Parallel to the efforts to develop fully autonomous robots, it is increasingly being realized that there are applications where it is essential to have a fully controlled robot and "feel" its operating conditions, i.e. telepresence. This trend is a result of the increasing efforts to address tasks where humans can perform significantly better but, due to associated hazards, distance, physical limitations and other causes, only robots can be employed to perform these tasks. Such robots need to be assisted by a human that remotely controls the operation. To address the goal of operating robots as human surrogates, the authors launched a study of mechanisms that provide mechanical feedback. For this purpose, electrorheological fluids (ERF) are being investigated for the potential application as miniature haptic devices. This family of electroactive fluids has the property of changing the viscosity during electrical stimulation. Consequently, ERF can be used to produce force feedback haptic devices for tele-operated control of medical and space robotic systems. Forces applied at the robot end-effector due to a compliant environment are reflected to the user using an ERF device where a change in the system viscosity will occur proportionally to the transmitted force. Analytical model and control algorithms are being developed taking into account the non-linearities of these type of devices. This paper will describe the concept and the developed mechanism of ERF based force feedback. The test process and the physical properties of this device will be described and the results of preliminary tests will be presented.

  2. Flagellar motor based micro hybrid devices.

    PubMed

    Tung, S; Kim, J-W

    2004-01-01

    We are in the process of developing a series of micro hybrid devices based on tethered flagellar motors. Examples of the devices include a microfluidic pump and a micro AC dynamo. The microfluidic pump is realized through the tethering of a harmless strain of Escherichia coli cells to a MEMS based micro channel. Each E. coli cell is about 3 mum long and 1 mum in diameter, with several flagella that are driven at the base by molecular rotary motors. The operational principle of the micro pump is based on the viscous pumping effect where continuous rotation of the tethered cells forms a fluidic conveyor belt that 'drags' fluid from one end of the channel to the other. We used hydrodynamic loading to synchronize cell rotation in order to maximize the fluid pumping capability. The micro dynamo is realized through the integration of tethered flagellar motors with micro ferromagnetic beads and micro copper coils. The micro dynamo generates AC power by using the tethered cells to create a rotating magnetic field around the copper coils. Preliminary result indicates a high power density when compared to other biologically based micro power generators. PMID:17270806

  3. Gated Ion Channel-Based Biosensor Device

    NASA Astrophysics Data System (ADS)

    Separovic, Frances; Cornell, Bruce A.

    A biosensor device based on the ion channel gramicidin A (gA) incorporated into a bilayer membrane is described. This generic immunosensing device utilizes gA coupled to an antibody and assembled in a lipid membrane. The membrane is chemically tethered to a gold electrode, which reports on changes in the ionic conduction of the lipid bilayer. Binding of a target molecule in the bathing solution to the antibody causes the gramicidin channels to switch from predominantly conducting dimers to predominantly nonconducting monomers. Conventional a.c. impedance spectroscopy between the gold and a counter electrode in the bathing solution is used to measure changes in the ionic conductivity of the membrane. This approach permits the quantitative detection of a range of target species, including bacteria, proteins, toxins, DNA sequences, and drug molecules.

  4. Stretchable polymer-based electronic device

    DOEpatents

    Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Wilson, Thomas S.; Hamilton, Julie K.; Benett, William J.; Tovar, Armando R.

    2008-02-26

    A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

  5. Delayed fluorescence in a solution-processable pure red molecular organic emitter based on dithienylbenzothiadiazole: a joint optical, electroluminescence, and magnetoelectroluminescence study.

    PubMed

    Chen, Ping; Wang, Li-Ping; Tan, Wan-Yi; Peng, Qi-Ming; Zhang, Shi-Tong; Zhu, Xu-Hui; Li, Feng

    2015-02-01

    The discovery of triplet excitons participating in the photoluminescent processes in a growing number of pure organic emitters represents an exciting impetus for a diversity of promising opto, bio, and optoelectronic applications. In this contribution, we have studied a small-molecule dithienylbenzothiadiazole-based red-emitting dye red-1b, which shows clearly delayed fluorescence under optical and electrical excitation. The OLED device that contained red-1b as a nondoped solution-processable emitter exhibited a moderately high utilization of exciton amounting to ≈31% and slow efficiency roll-off. Magnetoelectroluminescence measurements revealed the coexistence of reverse intersystem crossing from the lowest triplet state to singlet state (RISC, E-type triplet to singlet up-conversion) and triplet-triplet annihilation (TTA, P-type triplet to singlet up-conversion). Specifically, in low current-density regime, the moderately high exciton utilization is attributed to RISC (i.e., thermally activated delayed fluorescence, TADF), whereas in high current-density regime, TTA may contribute to suppressing efficiency roll-off. Furthermore, the results showed that red-1b may represent a new kind of organic red emitters that display delayed fluorescence in a way differing from the few red emitters investigated so far. PMID:25585040

  6. Glow discharge based device for solving mazes

    SciTech Connect

    Dubinov, Alexander E. Mironenko, Maxim S.; Selemir, Victor D.; Maksimov, Artem N.; Pylayev, Nikolay A.

    2014-09-15

    A glow discharge based device for solving mazes has been designed and tested. The device consists of a gas discharge chamber and maze-transformer of radial-azimuth type. It allows changing of the maze pattern in a short period of time (within several minutes). The device has been tested with low pressure air. Once switched on, a glow discharge has been shown to find the shortest way through the maze from the very first attempt, even if there is a section with potential barrier for electrons on the way. It has been found that ionization waves (striations) can be excited in the maze along the length of the plasma channel. The dependancy of discharge voltage on the length of the optimal path through the maze has been measured. A reduction in discharge voltage with one or two potential barriers present has been found and explained. The dependency of the magnitude of discharge ignition voltage on the length of the optimal path through the maze has been measured. The reduction of the ignition voltage with the presence of one or two potential barriers has been observed and explained.

  7. Policy-Based Device and Mobility Management

    NASA Astrophysics Data System (ADS)

    Imai, Pierre; Lamparter, Bernd; Liebsch, Marco

    Each new generation of mobile terminals offers more and better functionality, e.g. terminal mobility, multi-homing or inter-device session mobility. Furthermore, the interaction with consumer devices, e.g. DLNA TV or stereo sets, is becoming more common. Every new feature, however, is likely to result in increased complexity for the end user: Most people do not know how to utilize all features of their mobile terminals, hence devices that offer only a reduced feature set are becoming more popular. Additionally, while the end user expects to be in control, the network operator might want to exert some influence over which features are available or trigger actions, e.g. handovers, based on contract, location, etc. The aim of our research is to offer high flexibility and functionality combined with ease of use. We designed a policy management framework for the mentioned session mobility functions which supports the user in the configuration of the functions and automates commonly performed actions.

  8. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    NASA Astrophysics Data System (ADS)

    Gallagher, J. D.; Senaratne, C. L.; Sims, P.; Aoki, T.; Menéndez, J.; Kouvetakis, J.

    2015-03-01

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400-600 nm) Ge1-ySny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1-ySny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  9. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  10. Development of gallium aluminum phosphide electroluminescent diodes

    NASA Technical Reports Server (NTRS)

    Chicotka, R. J.; Lorenz, M. R.; Nethercot, A. H.; Pettit, G. D.

    1972-01-01

    Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

  11. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    NASA Astrophysics Data System (ADS)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS-based

  12. Azobenzene compound-based photomechanical actuator devices

    NASA Astrophysics Data System (ADS)

    Ye, Xianjun; Kuzyk, Mark G.

    2012-10-01

    It has been shown that the chromophore disperse red 1 azobenzene (DR1) when doped into poly(methyl methacrylate) (PMMA) optical fiber can be used to make an optical cantilever in which an asymmetrically propagating beam at 633nm causes the fiber to bend. The fast response process is purported to be due to elongation of the material as molecules change between cis and trans isomers. In our work, UV light of 350nm will be used to investigate trans to cis somerization, which should induce contraction. Short fiber segments in a three-contactpoint geometry will be used to control the position and tilt of silver- or aluminum-coated coverslips that together with microscope glass slides as the substrate make optically-actuated beam-controlling mounts and Fabry-Perot interferometers. A Michelson interferometer is used to measure the length change of the fiber actuator. Azodye doped liquid crystal (LC) elastomers have been demonstrated to have a photomechanical effect that is at least ten times bigger than thermoplastic-based polymer fiber. However, the optical quality of thermoplastics are much better, enabling the cascading of devices in series. We will report on visible and UV laser-actuation of LC elastomer and polymer device structures using a quadrant photodetector to record the beam deflection caused by the shape change of the material, which will allow for dynamical measurements of the mechanisms. All measurements will be calibrated against a piezoelectric crystal actuator. Photomechanical devices provide an inexpensive but versatile, small-form factor, vibration free and high precision solution to optomechanics, sensing, positioning and other space applications.

  13. Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices

    NASA Astrophysics Data System (ADS)

    Chakraborty, Arpan

    Conventional state-of-the-art wurtzite nitrides based light-emitters, grown along the polar c-direction, are characterized by the presence of polarization-induced electrostatic fields in the quantum wells. These built-in fields are detrimental to the performance of optoelectronic devices. Growth of light-emitters along nonpolar and semipolar directions is an effective means to circumvent the adverse effects of polarization. This dissertation focuses on the growth and characterization of nonpolar and semipolar (Al, Ga, In)N based heterostructures and devices. Two nonpolar planes, a- and m-, and two semipolar planes, (10 11) and (1013), have been investigated in this thesis. Initially, the growth of n-type and p-type nonpolar a-plane GaN was optimized to yield cladding layers of the highest possible conductivity in the devices. Various interesting observations, e.g. low acceptor activation energy, anisotropic conductivity, etc, were made during the course of this study. In order to achieve defect reduction in planar a-plane GaN films, in-situ SiNx interlayers were used as nano-mask. The effect of SiNx interlayer on the structural and optical properties of the overgrown GaN layer was investigated. Growth of InGaN/GaN multiple-quantum wells (MQWs) along nonpolar and semipolar planes was investigated and their structural and optical properties were studied. The effect of defects on the emission properties of the MQWs has been addressed. Optical measurements revealed the absence of polarization in the MQWs. Based on the MQW optimization, light-emitting diodes were grown on nonpolar and semipolar templates and their electrical and optical properties were studied. Electroluminescence measurement confirmed the absence of built-in electric fields in the quantum well. We demonstrated the first nonpolar and semipolar light-emitting diodes with milliwatt-range output power. DC output power as high as 0.6 mW at 20 mA and pulsed output power as high as 23.5 mW at 1 A were

  14. Spatially resolved determination of the dark saturation current of silicon solar cells from electroluminescence images

    NASA Astrophysics Data System (ADS)

    Glatthaar, Markus; Giesecke, Johannes; Kasemann, Martin; Haunschild, Jonas; The, Manuel; Warta, Wilhem; Rein, Stefan

    2009-06-01

    We present a novel method to determine spatially resolved the dark saturation current of standard silicon solar cells. For this two electroluminescence images are taken at two different voltages. From these two images, first the spatial voltage distribution can be calculated. Second by applying the Laplacian to the voltage image from Ohm's law and the continuity equation, the current through the device at a certain position can be determined. Knowing the local current through the device, the local voltage, and the emitter sheet resistance allows to determine the local dark saturation current. The clue of this method is to cope with the noise by using an appropriate noise reduction algorithm. By simulating electroluminescence images with realistic noise and known dark saturation current we demonstrate the applicability of the method with our noise reduction algorithm. Experimentally we compare our method with spectral response light beam induced current on multicrystalline solar cell.

  15. Nitride-based runaway effect devices.

    NASA Astrophysics Data System (ADS)

    Komirenko, Sergiy M.; Kim, Ki Wook; Kochelap, Viacheslav A.; Dutta, Mitra; Stroscio, Michael A.

    2001-03-01

    We have investigated development of runaway effect (RAE) in polar semiconductors for the case when energy of LO phonon exceeds the lattice temperature. RAE manifest itself above some threshold electric field when the electrons gain energy from the field faster than they can dissipate it emmiting optical phonons. For superthreshold fields in bulk samples, the steady state occurs when electrons reach upper valleys so that observed velocities represent the velocities averaged over all populated valleys. We proposed and analyzed short nitride-based vertical heterostructures where electron transport can reach RAE-regime. For nitrides of Ga and Al, we found the RAE-threshold fields to be 142 kV/cm and 465 kV/cm, respectively. Our estimations reveal that in such RAE-devices the electrons can reach velocities appreciably higher than in bulk-like materials and their distribution over the energy demonstrates the population inversion. We discuss high-speed and high-power applications of RAE-devices.

  16. Hybrid photovoltaic devices based on chalcogenide nanostructures

    NASA Astrophysics Data System (ADS)

    de Freitas, Jilian N.; Alves, João. Paulo C.; Korala, Lasantha; Brock, Stephanie L.; Nogueira, Ana F.

    2012-09-01

    Solar cells based on the combination of conjugated polymers and fullerenes are among the most promising devices for low-cost solar energy conversion. Significant improvements in the efficiency have been accomplished, but some bottlenecks still persist. The substitution of fullerenes by inorganic semiconductor nanoparticles, especially CdSe and CdS, has been investigated as a promising alternative. In this work, we highlight two aspects to be considered in the pursuit of more efficient devices. By comparing different polymer/CdSe systems, we show how the polymer structure can be used to tune the charge transfer from the polymer to CdSe. Even if this process is efficient, the charges will be trapped in the inorganic phase if the charge carrier transport of the nanoparticles is poor. An elegant way to improve the electron hopping is to form an electrically integrated network of nanoparticles. The use of chalcogenide aerogels is a new alternative which may be interesting for applications requiring maximal transport of charge and is also discussed here.

  17. Improving the diversity of manufacturing electroluminescent flat panel displays

    SciTech Connect

    Moss, T.S.; Samuels, J.A.; Smith, D.C.

    1995-09-01

    Crystalline calcium thiogallate with a cerium dopant has been deposited by metal-organic chemical vapor deposition (MOCVD) at temperatures below 600{degrees}C on a low cost glass substrate. An EL luminance of 1.05 fL was observed 40 volts above threshold at 60 Hz. This is more than an order of magnitude improvement over earlier crystalline-as-deposited thiogallate materials. These results pave the way for the use of MOCVD as a potential method for processing full color thin-film electroluminescent (TFEL) flat panel displays. The formation of the CaGa{sub 2}S{sub 4}:Ce phosphor requires precise control over a number of deposition parameters including flow rates, substrate temperature, and reactor pressure. The influence of these parameters will be discussed in terms of structure, uniformity, and TFEL device performance.

  18. Si based GeSn light emitter: mid-infrared devices in Si photonics

    NASA Astrophysics Data System (ADS)

    Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

    2015-02-01

    Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

  19. Polymer-based red, green, and blue emitting devices fabricated by reductive photopatterning

    NASA Astrophysics Data System (ADS)

    Trattnig, Gernot; Pogantsch, Alexander; Langer, Gregor; Kern, Wolfgang; Zojer, Egbert

    2002-11-01

    Using a color tuning approach reliant on reductive photopatterning, we present red-green-blue electroluminescence from a single layer polymer light-emitting device. To be able to cover the full color range, we employ a single emissive layer consisting of a blue emitter (the host polymer), as well as green and red emitting guest polymers. The energy transfer between the host and the various guest compounds is tuned via a reductive photoinitiated process in the presence of gaseous hydrazine. This process is compatible with regular film casting techniques such as spin coating, and therefore can be regarded as a promising alternative to the more complex, traditional patterning approaches.

  20. Heterostructure Electroluminescent Diodes Prepared from Self-Assembled Multilayers of Poly(p-phenylene vinylene) and Sulfonated Polyaniline

    NASA Astrophysics Data System (ADS)

    Onoda, Mitsuyoshi; Yoshino, Katsumi

    1995-02-01

    Multilayer heterostructure thin films of electroactive polymers such as poly( p-phenylene vinylene) (PPV), -precursor and sulfonated polyaniline (SPAn), have been successfully fabricated by a process based on the spontaneous self-assembly of conjugated polyion on a substrate. We have prepared SPAn/PPV multilayer-heterostructure light-emitting diodes (LEDs) using this electrostatic self-assembly technique and discussed the electroluminescence (EL) properties. The thickness of each bilayer is about 20 Å. The LED device composed of 10 bilayers has a turn-on voltage of about 1.4 V and greenish-yellow light was clearly observed under normal room illumination even at low driving voltage. These results are discussed in terms of radiative recombination of the singlet polaron-excitons formed by injection of electrons and holes and the formation of polaron-excitons in PPV layers of SPAn/PPV heterostructures.

  1. Synthesis, Crystal Analyses, Physical Properties, and Electroluminescent Behavior of Unsymmetrical Heterotwistacenes.

    PubMed

    Lv, Bo; Xiao, Jinchong; Zhou, Jian; Zhang, Xi; Duan, Jingdan; Su, Wenming; Zhao, Jianwen

    2016-07-27

    Four novel unsymmetrical heteroacenes containing five-membered heterocycles (OPyN, TPyN, TPyC, TPyO) have been synthesized and characterized. The formed molecules exhibited twisted structures, determined by crystal analysis and showed blue/green fluorescence in dichloromethane and in thin film. Compounds OPyN and TPyN were selectively used as active ingredients, and the fabricated devices displayed promising electroluminescent performance. PMID:27383556

  2. An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wells

    SciTech Connect

    Aleshkin, V. Ya.; Dikareva, N. V.; Dubinov, A. A.; Zvonkov, B. N.; Kudryavtsev, K. E.; Nekorkin, S. M.

    2015-02-15

    A light-emitting diode structure based on GaAs with eight narrow Ge quantum wells is grown by laser sputtering. An electroluminescence line polarized predominately in the plane parallel to the constituent layers of the structure is revealed. The line corresponds to the direct optical transitions in momentum space in the Ge quantum wells.

  3. Magnetic tunnel junction based spintronic logic devices

    NASA Astrophysics Data System (ADS)

    Lyle, Andrew Paul

    The International Technology Roadmap for Semiconductors (ITRS) predicts that complimentary metal oxide semiconductor (CMOS) based technologies will hit their last generation on or near the 16 nm node, which we expect to reach by the year 2025. Thus future advances in computational power will not be realized from ever-shrinking device sizes, but rather by 'outside the box' designs and new physics, including molecular or DNA based computation, organics, magnonics, or spintronic. This dissertation investigates magnetic logic devices for post-CMOS computation. Three different architectures were studied, each relying on a different magnetic mechanism to compute logic functions. Each design has it benefits and challenges that must be overcome. This dissertation focuses on pushing each design from the drawing board to a realistic logic technology. The first logic architecture is based on electrically connected magnetic tunnel junctions (MTJs) that allow direct communication between elements without intermediate sensing amplifiers. Two and three input logic gates, which consist of two and three MTJs connected in parallel, respectively were fabricated and are compared. The direct communication is realized by electrically connecting the output in series with the input and applying voltage across the series connections. The logic gates rely on the fact that a change in resistance at the input modulates the voltage that is needed to supply the critical current for spin transfer torque switching the output. The change in resistance at the input resulted in a voltage margin of 50--200 mV and 250--300 mV for the closest input states for the three and two input designs, respectively. The two input logic gate realizes the AND, NAND, NOR, and OR logic functions. The three input logic function realizes the Majority, AND, NAND, NOR, and OR logic operations. The second logic architecture utilizes magnetostatically coupled nanomagnets to compute logic functions, which is the basis of

  4. Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

    PubMed

    Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

    2015-07-27

    In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V. PMID:26367556

  5. Development of superconducting interference device based on graphene

    NASA Astrophysics Data System (ADS)

    Tsumura, K.; Ohsugi, M.; Hayashi, T.; Watanabe, E.; Tsuya, D.; Nomura, S.; Takayanagi, H.

    2012-12-01

    We fabricated and examined the operation of graphene-based superconducting interference device (SQUID) consisting of two superconductor-single layer graphene-superconductor junctions connected in parallel on a superconducting loop made of aluminum. Current-voltage characteristic of the device exhibits supercurrent flowing through SGS junctions. Mean switching current can be modulated with the applied magnetic field periodically. Deduced oscillation period coincides well with that estimated from the device geometry, suggesting that our device works as a graphene-based SQUID.

  6. Diode-laser-based therapy device

    NASA Astrophysics Data System (ADS)

    Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

    2004-10-01

    A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

  7. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

    NASA Astrophysics Data System (ADS)

    Zhang, Wei

    In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

  8. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    SciTech Connect

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  9. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. Antimony Based III-V Thermophotovoltaic Devices

    SciTech Connect

    CA Wang

    2004-06-09

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  11. Enhanced fluorescence by surface plasmon coupling of Au nanoparticles in an organic electroluminescence diode

    NASA Astrophysics Data System (ADS)

    Fujiki, A.; Uemura, T.; Zettsu, N.; Akai-Kasaya, M.; Saito, A.; Kuwahara, Y.

    2010-01-01

    A significant increase in electroluminescence was achieved through coupling with localized surface plasmons in a single layer of Au nanoparticles. We fabricated a thin-film organic electroluminescence diode, which consists of an indium tin oxide (ITO) anode, a Au nanoparticle array, a Cu phthalocyanine hole transport layer, a tris(8-hydroxylquinolianato) aluminum (III) electron transport layer, a LiF electron injection layer, and an Al cathode. The device structure, with size-controlled Au particles embedded on ITO, can be used to realize the optimum distance for exciton-plasmon interactions by simply adjusting the thickness of the hole transport layer. We observed a 20-fold increase in the molecular fluorescence compared with that of a conventional diode structure.

  12. Low-voltage polariton electroluminescence from an ultrastrongly coupled organic light-emitting diode

    SciTech Connect

    Gubbin, Christopher R.; Maier, Stefan A.; Kéna-Cohen, Stéphane

    2014-06-09

    We demonstrate electroluminescence from Frenkel molecular excitons ultrastrongly coupled to photons of a metal-clad microcavity containing a 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorene emissive layer. Thin layers of molybdenum oxide and 4,7-diphenyl-1,10-phenanthroline are used as hole and electron injection layers, respectively. The fabricated devices exhibit an electroluminescence threshold of 3.1 V, a value that is below the bare exciton energy. This result is found to be independent of detuning and consistent with a two-step process for polariton formation. Moreover, we investigate the quantum efficiency of carrier to polariton to photon conversion and obtain an external quantum efficiency of 0.1% for the fabricated structures, an improvement of 5 orders of magnitude over previous reports.

  13. Synaptic devices based on purely electronic memristors

    NASA Astrophysics Data System (ADS)

    Pan, Ruobing; Li, Jun; Zhuge, Fei; Zhu, Liqiang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Cao, Hongtao; Fu, Bing; Li, Kang

    2016-01-01

    Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

  14. Two-Layer, Full-Color Electroluminescent Display

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.

    1987-01-01

    Full-color, matrix-addressed electroluminescent display uses three different color phosphors located in two separate, superimposed layers to provide higher brightness, better contrast ratio, and higher resolution. Design used for such transparent, flat-panel display media as thin-film electroluminescent phosphors, liquid crystals, or light-emitting diodes.

  15. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Berencén, Y.; Wutzler, R.; Braun, M.; Hiller, D.; Ramírez, J. M.; Garrido, B.; Helm, M.; Skorupa, W.

    2014-09-01

    Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO2 and an Er-implanted layer made of SiO2, Si-rich SiO2, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficiencies in the order of 2 × 10-3 (for SiO2:Er) or 2 × 10-4 (all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5-1.5 × 10-15 cm-2. Whereas the fraction of potentially excitable Er ions in SiO2 can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO2 or Si nitride compared to SiO2 as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er3+. For all investigated devices, EL quenching cross sections in the 10-20 cm2 range and charge-to-breakdown values in the range of 1-10 C cm-2 were measured. For the present design with a SiO2 acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.

  16. Cosmetic devices based on active transdermal technologies.

    PubMed

    Scott, Jessica A; Banga, Ajay K

    2015-09-01

    Active transdermal technology, commonly associated with drug delivery, has been used in recent years by the cosmetic industry for the aesthetic restoration of skin and delivery of cosmetic agents. In this article, we provide an overview of the skin's structure, various skin types, skin's self-repair mechanisms that are stimulated from the usage of cosmetic devices and discuss cosmetic applications. Summaries of the most common active transdermal technologies such as microneedles, iontophoresis, sonophoresis, lasers and microdermabrasion will be provided, in relation to the marketed cosmetic devices available that incorporate these technologies. Lastly, we cover combinations of active technologies that allow for more enhanced cosmetic results, and the current limitations of cosmetic devices. PMID:26389853

  17. A Laboratory-Based Course in Display Technology

    ERIC Educational Resources Information Center

    Sarik, J.; Akinwande, A. I.; Kymissis, I.

    2011-01-01

    A laboratory-based class in flat-panel display technology is presented. The course introduces fundamental concepts of display systems and reinforces these concepts through the fabrication of three display devices--an inorganic electroluminescent seven-segment display, a dot-matrix organic light-emitting diode (OLED) display, and a dot-matrix…

  18. Performance evaluation of cellular phone network based portable ECG device.

    PubMed

    Hong, Joo-Hyun; Cha, Eun-Jong; Lee, Tae-Soo

    2008-01-01

    In this study, cellular phone network based portable ECG device was developed and three experiments were performed to evaluate the accuracy, reliability and operability, applicability during daily life of the developed device. First, ECG signals were measured using the developed device and Biopac device (reference device) during sitting and marking time and compared to verify the accuracy of R-R intervals. Second, the reliable data transmission to remote server was verified on two types of simulated emergency event using patient simulator. Third, during daily life with five types of motion, accuracy of data transmission to remote server was verified on two types of event occurring. By acquiring and comparing subject's biomedical signal and motion signal, the accuracy, reliability and operability, applicability during daily life of the developed device were verified. Therefore, cellular phone network based portable ECG device can monitor patient with inobtrusive manner. PMID:19162767

  19. Elements and devices based on magnetorheological effect

    SciTech Connect

    Kordonskii, V.I. )

    1993-01-01

    Magnetorheological (MR) suspensions can serve as the basis of transducers controlling hydraulic resistance; the mathematical model for such a transducer can be derived via quasi-stationary approximation, taking into account the transient processes in the magnetic field inductor. Accounts are presently given of damping and antishock devices employing the MR element. Such devices' characterizations are obtained by supplementing the system of equations describing MR transducer dynamics with relations encompassing hydromechanical processes in a hydraulic cylinder. MR transducers can be used to form flexible bridgelike distributors controlling hydraulic actuators. 3 refs.

  20. Model-based engineering for medical-device software.

    PubMed

    Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

    2010-01-01

    This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1. PMID:21142522

  1. Electrochromic devices based on lithium insertion

    DOEpatents

    Richardson, Thomas J.

    2006-05-09

    Electrochromic devices having as an active electrode materials comprising Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb, I and chalcogenides are disclosed. The addition of other metals, i.e. Ag and Cu to the active electrode further enhances performance.

  2. Animation Based Learning of Electronic Devices

    ERIC Educational Resources Information Center

    Gero, Aharon; Zoabi, Wishah; Sabag, Nissim

    2014-01-01

    Two-year college teachers face great difficulty when they teach the principle of operation of the bipolar junction transistor--a subject which forms the basis for electronics studies. The difficulty arises from both the complexity of the device and by the lack of adequate scientific background among the students. We, therefore, developed a unique…

  3. Thorough subcells diagnosis in a multi-junction solar cell via absolute electroluminescence-efficiency measurements

    PubMed Central

    Chen, Shaoqiang; Zhu, Lin; Yoshita, Masahiro; Mochizuki, Toshimitsu; Kim, Changsu; Akiyama, Hidefumi; Imaizumi, Mitsuru; Kanemitsu, Yoshihiko

    2015-01-01

    World-wide studies on multi-junction (tandem) solar cells have led to record-breaking improvements in conversion efficiencies year after year. To obtain detailed and proper feedback for solar-cell design and fabrication, it is necessary to establish standard methods for diagnosing subcells in fabricated tandem devices. Here, we propose a potential standard method to quantify the detailed subcell properties of multi-junction solar cells based on absolute measurements of electroluminescence (EL) external quantum efficiency in addition to the conventional solar-cell external-quantum-efficiency measurements. We demonstrate that the absolute-EL-quantum-efficiency measurements provide I–V relations of individual subcells without the need for referencing measured I–V data, which is in stark contrast to previous works. Moreover, our measurements quantify the absolute rates of junction loss, non-radiative loss, radiative loss, and luminescence coupling in the subcells, which constitute the “balance sheets” of tandem solar cells. PMID:25592484

  4. High-resolution electroluminescent imaging of pressure distribution using a piezoelectric nanowire LED array

    NASA Astrophysics Data System (ADS)

    Pan, Caofeng; Dong, Lin; Zhu, Guang; Niu, Simiao; Yu, Ruomeng; Yang, Qing; Liu, Ying; Wang, Zhong Lin

    2013-09-01

    Emulation of the sensation of touch through high-resolution electronic means could become important in future generations of robotics and human-machine interfaces. Here, we demonstrate that a nanowire light-emitting diode-based pressure sensor array can map two-dimensional distributions of strain with an unprecedented spatial resolution of 2.7 µm, corresponding to a pixel density of 6,350 dpi. Each pixel is composed of a single n-ZnO nanowire/p-GaN light-emitting diode, the emission intensity of which depends on the local strain owing to the piezo-phototronic effect. A pressure map can be created by reading out, in parallel, the electroluminescent signal from all of the pixels with a time resolution of 90 ms. The device may represent a major step towards the digital imaging of mechanical signals by optical means, with potential applications in artificial skin, touchpad technology, personalized signatures, bio-imaging and optical microelectromechanical systems.

  5. Recoverable electroluminescence from a contaminated organic/organic interface in an organic light-emitting diode

    NASA Astrophysics Data System (ADS)

    Liao, L. S.; Klubek, K. P.; Madathil, J. K.; Tang, C. W.; Giesen, D. J.

    2010-01-01

    An organic/organic interface, like an electrode/organic interface in an organic light-emitting diode (OLED), can be severely affected by ambient contamination. However, we surprisingly found that the contaminated surface or interface can be "cured" by depositing a thin interfacial layer containing a strong reducing agent onto the contaminated surface before finishing the fabrication of the device. For example, in comparison with a regular OLED, an OLED having a 5-min ambient exposure to the light-emitting layer/electron-transporting layer interface drops its initial electroluminescence (EL) intensity by 50%. The decreased EL intensity due to the 5-min ambient exposure can be fully recovered and the improved operational stability can be realized after curing the contaminated interface using a thin Li interfacial layer. The experimental results provide a useful method to cope with the interfacial contamination in OLEDs during a manufacturing process. In addition, our results support the failure mechanism of an Alq-based OLED suggested by [Papadimitrakopoulos et al., Chem. Mater. 8, 1363 (1996)].

  6. Device considerations for development of conductance-based biosensors

    PubMed Central

    Lee, Kangho; Nair, Pradeep R.; Scott, Adina; Alam, Muhammad A.; Janes, David B.

    2009-01-01

    Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors. PMID:24753627

  7. Circularly polarised phosphorescent photoluminescence and electroluminescence of iridium complexes

    PubMed Central

    Li, Tian-Yi; Jing, Yi-Ming; Liu, Xuan; Zhao, Yue; Shi, Lin; Tang, Zhiyong; Zheng, You-Xuan; Zuo, Jing-Lin

    2015-01-01

    Nearly all the neutral iridium complexes widely used as dopants in PhOLEDs are racemic mixtures; however, this study observed that these complexes can be separated into stable optically active Λ and ∆ isomers and that their chirality is an intrinsic property. The circularly polarised phosphorescent photoluminescence (CPPPL) signals of Λ/Δ isomers are perfect mirror images with opposite polarisation and equal intensity exhibiting a “handedness” for the polarisation. For the first time, we applied the Λ/Δ iridium isomers as emitters in OLEDs, and the circularly polarised phosphorescent electroluminescence (CPPEL) spectra reveal completely positive or negative broad peaks consistent with the CPPPL spectra. The results demonstrate that the Λ/Δ isomers have potential application for 3D OLEDs because they can exhibit high efficiency and luminance, and 3D display technology based on circularly polarised light is the most comfortable for the eyes. PMID:26446521

  8. Magnetic tunnel junction based spintronic logic and memory devices

    NASA Astrophysics Data System (ADS)

    Yao, Xiaofeng

    2011-12-01

    The development of semiconductor devices is limited by the high power consumption and further physical dimension reduction. Spintronic devices, especially the magnetic tunnel junction (MTJ) based devices, have advantages of non-volatility, reconfigurable capability, fast-switching speed, small-dimension, and compatibility to semiconductor devices, which is a promising candidate for future logic and memory devices. However, the previously proposed MTJ logic devices have been operated independently and therefore are limited to only basic logic operations. Consequently, the MTJ device has only been used as ancillary device in the circuit, rather than the main computation component. In this thesis, study has been done on both spintronic logic and memory devices. In the first part, systematic study has been performed on MTJ based logic devices in order to expand the functionalities and properties of MTJ devices. Basic logic cell with three-input has been designed and simulated. Nano-magnetic-channel has been proposed, which is the first design to realize the communication between the MTJ logic cells. With basic logic unit as a building block, a spintronic logic circuit has been designed with MTJ as the dominant component. HSPICE simulation has been done for this spintronic logic circuit, which acts as an Arithmetic Logic Unit. In the spintronic memory device part, study has been focused on the fundamental study on the current induced switching in MTJ devices with hybrid free layer. With hybrid free layer, magnetic non-uniformity is introduced along the current direction, which induces extra spin torque component. Unique current-induced switching has been observed and studied in the hybrid free layer MTJ. Adiabatic spin torque, which is introduced by spatial non-uniform magnetization in the hybrid free layer, plays an important role for the unique switching. By tuning the bias field, single-polar current switching was achieved in this hybrid MTJ device, which gives the

  9. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  10. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

    PubMed Central

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-01-01

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications. PMID:26138830

  11. Electroluminescent and photosensitive films prepared by DTC-CVD method

    NASA Astrophysics Data System (ADS)

    Zavyalova, Ludmila V.; Svechnikov, George S.

    1997-08-01

    The original chemical vapor deposition (CVD) method used in fabrication A2B6 films, photodetectors and electro- luminescent emitters based on these films have been reported. The basic idea behind this method is thermal decomposition of dithiocarbamates (DTC). The proposed method does not require expensive materials and vacuum equipment. Moreover, the DTC-CVD method differs from the known CVD methods in source material delivery method, a low deposition temperature and a non-sealed reactor geometry. Both CdS and CdS1-xSex were obtained at temperature of 240- 280 degrees C and were activated directly in the grown process by Cu and In, or by annealing in mixture CdS: Cu, Cl. Photodetectors with absorption maxima at 500-750 nm have dark conductivity (sigma) D EQ 10-9 divided by 10-8 (Omega) -1 cm-1 and photoconductivity (sigma) ph equals 10-2 divided by 10-1 (Omega) -1 cm-1 at 200 lux. CdS films with thickness of 6 divided by 12 micrometers have been used as sandwich-type photoconductor detectors. Electroluminescence ZnS:Mn films prepared by DTC-CVD method at the substrate temperature of 200 DIV 300 degrees C without additional annealing have high luminance and luminous efficiency. Deposition at a law temperature makes it possible to use flexible polymer films or low cost glasses as substrates. Because the technique is rather simple and can be applied to obtain all types of thin film electroluminescence structure layers, we expect a low price of light sources based on these films.

  12. Plasmonically enhanced hot electron based photovoltaic device.

    PubMed

    Atar, Fatih B; Battal, Enes; Aygun, Levent E; Daglar, Bihter; Bayindir, Mehmet; Okyay, Ali K

    2013-03-25

    Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction for electron collection and the plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design and tunneling MIM design separately. We demonstrate close to one order of magnitude enhancement in the short circuit current at the resonance wavelengths. PMID:23546103

  13. 1-dimension nano-material-based flexible device

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong

    2009-11-01

    1D nano-material-based flexible devices has attracted considerable attention owing to the growing need of the high-sensitivity flexible sensor, portable consumer electronics etc.. In this paper, the 1D nano-materials-based flexible device on polyimide substrate was proposed. The bottom-up and top-down combined process were used for constructing the ZnO nanowire and the CNT-based flexible devices. Their electrical characteristics were also investigated. The measurement results demonstrate that the flexible device covered with a layer of Al2O3 has good ohm electrical contact behavior between the nano-material and micro-electrodes. The proposed 1D nano-material-based flexible device shows the application potential in the sensing fields.

  14. Regulatory science based approach in development of novel medical devices.

    PubMed

    Sakuma, Ichiro

    2015-08-01

    For development rational evaluation method for medical devices' safety and efficacy, regulatory science studies are important. Studies on regulatory affairs related to a medical device under development should be conducted as well as its technological development. Clinical performance of a medical device is influenced by performance of the device, medical doctors' skill, pathological condition of a patient, and so on. Thus it is sometimes difficult to demonstrate superiority of the device in terms of clinical outcome although its efficacy as a medical device is accepted. Setting of appropriate end points is required to evaluate a medical device appropriately. Risk assessment and risk management are the basis of medical device safety assurance. In case of medical device software, there are difficulties in identifying the risk due to its complexity of user environment and different design and manufacturing procedure compared with conventional hardware based medical devices. Recent technological advancement such as information and communication technologies (ICT) for medical devices and wireless network has raised new issue on risk management: cybersecurity. We have to watch closely the progress of safety standard development. PMID:26736611

  15. Memristive Hebbian plasticity model: device requirements for the emulation of Hebbian plasticity based on memristive devices.

    PubMed

    Ziegler, Martin; Riggert, Christoph; Hansen, Mirko; Bartsch, Thorsten; Kohlstedt, Hermann

    2015-04-01

    In this work we present a phenomenological model for synaptic plasticity suitable to describe common plasticity measurements of memristive devices. We show evidence that the presented model is basically compatible with advanced biophysical plasticity models, which account for a large body of experimental data on spike-timing-depending plasticity (STDP) as an asymmetric form of Hebbian learning. The basic characteristics of our model are a saturation of the synaptic weight growth and a weight dependent learning rate. Moreover, it accounts for common resistive switching behaviors of memristive devices under voltage pulse application and allows to study essential requirements of individual memristive devices for the emulation of Hebbian plasticity in neuromorphic circuits. In this respect, memristive devices based on mixed ionic/electronic and one exclusively electronic mechanism are explored. The ionic/electronic devices consist of the layer sequence metal/isolator/metal and represent today's most popular devices. The electronic device is a MemFlash-cell which is based on a conventional floating gate transistor in a diode configuration wiring scheme exhibiting a memristive (pinched) I-V characteristic. PMID:25879966

  16. Electrochemical sensing in paper-based microfluidic devices.

    PubMed

    Nie, Zhihong; Nijhuis, Christian A; Gong, Jinlong; Chen, Xin; Kumachev, Alexander; Martinez, Andres W; Narovlyansky, Max; Whitesides, George M

    2010-02-21

    This paper describes the fabrication and the performance of microfluidic paper-based electrochemical sensing devices (we call the microfluidic paper-based electrochemical devices, microPEDs). The microPEDs comprise paper-based microfluidic channels patterned by photolithography or wax printing, and electrodes screen-printed from conducting inks (e.g., carbon or Ag/AgCl). We demonstrated that the microPEDs are capable of quantifying the concentrations of various analytes (e.g., heavy-metal ions and glucose) in aqueous solutions. This low-cost analytical device should be useful for applications in public health, environmental monitoring, and the developing world. PMID:20126688

  17. CMOS-liquid-crystal-based image transceiver device

    NASA Astrophysics Data System (ADS)

    Efron, Uzi; Davidov, Isak; Sinelnikov, Vladimir; Levin, Ilya

    2001-05-01

    A CMOS-Liquid Crystal-Based Image Transceiver Device (ITD) is under development at the Holon Institute of Technology. The device combines both functions of imaginary and display in a single array structure. This unique structure allows the combination of see-through, aiming, imaging and the displaying of a superposed image to be combined in a single, compact, head mounted display. The CMOS-based pixel elements are designed to provide image sensor part of the pixel is based on an n-well photodiode and a three-transistors readout circuit. The imaging function is based on a back- illuminated sensor configuration. In order to provide a high imager fill-factor, two pixel configuration are proposed: 1) A p++/p-/p-well silicon structure using twin- well CMOS process; 2) an n-well processed silicon structure with a micro-lens array. The display portion of the IT device is to be fabricate don a silicon-based reflective, active matrix driver, using nematic liquid crystal material. The reflective display pixel electrode is driven by an n-MOS transistor, formed in the corresponding pixel region on the silicon substrate. The timing, sequencing and control of the IT device array are designed in a pipeline array processing scheme. A preliminary prototype system and device design have been performed and the first test device is currently being tested. Details of the device design as well as its smart goggle applications are presented.

  18. CMOS/LCOS-based image transceiver device: II

    NASA Astrophysics Data System (ADS)

    Efron, Uzi; Davidov, Isak; Sinelnikov, Vladimir; Friesem, Asher A.

    2001-11-01

    A CMOS-liquid crystal-based image transceiver device (ITD) is under development at the Holon Institute of Technology. The device combines both functions of imaging and display in a single array configuration. This unique structure allows the combination of see-through, aiming, imaging and the displaying of a superposed image to be combined in a single, compact, head mounted display. The CMOS-based pixel elements are designed to provide efficient imaging in the visible range as well as driver capabilities for the overlying liquid crystal modulator. The image sensor part of the pixel is based on an n-well photodiode and a three-transistor readout circuit. The imaging function is based on a back- illuminated sensor configuration. In order to provide a high imager fill-factor, two pixel configurations are proposed: 1) A p++/p-/p-well silicon structure using twin- well CMOS process; 2) An n-well processed silicon structure with a micro-lens array. The display portion of the IT device is to be fabricated on a silicon-based reflective, active matrix driver, using nematic liquid crystal material, in LCOS technology. The timing, sequencing and control of the IT device array are designed in a pipeline array processing scheme. A preliminary prototype system and device design have been performed and the first test device is currently undergoing testing. Details of the device design as well as its Smart Goggle applications are presented.

  19. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

    PubMed

    Willander, M; Nur, O; Zhao, Q X; Yang, L L; Lorenz, M; Cao, B Q; Zúñiga Pérez, J; Czekalla, C; Zimmermann, G; Grundmann, M; Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A; Boukos, N; Travlos, A; Kwack, H S; Guinard, J; Le Si Dang, D

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  20. [Development of HPC-based monitoring devices for community medicine].

    PubMed

    Wu, Bao-ming; Nie, Xiang-fei; Zhu, Xin-jian; He, Qing-hua; Zhuo, Yu

    2002-09-01

    This paper introduces several novel HPC-based monitoring devices for community medicine. They support net transmission and have superiorities of portability, small size, good mobility, easy use and strong adaptivity. PMID:16104259

  1. Voltage-independent pure red devices based on a carbazole-functionalized europium complex

    NASA Astrophysics Data System (ADS)

    Xin, Hao; Sun, Min; Wang, Ke Zhi; Zhang, Yong An; Jin, Lin Pei; Huang, Chun Hui

    2004-04-01

    Electroluminescent properties of carzole-founctionized complex tris(dibenzoylmethanato)(1-ethyl-2-( N-ethyl-carbazole-yl-4)imidazo[4,5-f]1,10-phenanthroline)europium(III) (Eu(DBM) 3Phencarz) was investigated. By utilizing complex tris(1-phenyl-3-methyl-4-isobutyl-5-pyrazolone)-bis(triphenyl phosphine oxide) gadolinium Gd(PMIP) 3(TPPO) 2 as electron-transport layer, hole and electron injection was relatively balanced in the emitting layer and a device with the configuration of ITO/TPD (20 nm)/(Eu(DBM) 3Phencarz) (40 nm)/Gd(PMIP) 3(TPPO) (20 nm)/AlQ (30 nm)/Mg:Ag emitted voltage-independent characteristic europium light with the luminance of 1193 cd/m 2, power efficiency 1.68 lm/W.

  2. [Improved color purity of green OLED device based on Au thin film].

    PubMed

    Zhang, Yan-Fei; Zhao, Su-Ling; Xu, Zheng

    2014-04-01

    Au was used as anode in some kind of organic electroluminescent devices. Sometimes transparent Au electrodes are required, which means that the thickness of Au electrode should be as thin as possible. Therefore, two metals together forming an electrode become a choice. In the present paper, translucent Au/Al layer was inserted to anode side, and OLED device with the structure of ITO/Al (16 nm)/Au (10 nm)/TPD (30 nm)/AlQ (30 nm)/LiF (0.5 nm)/Al was prepared. There is a spectral narrowing phenomenon on the device ITO/TPD (30 nm)/AlQ (30 nm)/LiF (0. 5 nm)/Al, and through analysis and experiment it was found that this phenomenon comes from selective permeability to light of Au thin film rather than the microcavity effect. The device maintains wide viewing angle, without the angular dependence. And the color purity of device with Au thin film is improved. PMID:25007596

  3. Detection of power losses in busbar solder contacts by electroluminescence imaging of solar cells

    NASA Astrophysics Data System (ADS)

    Gazuz, Vladimir; Buerhop, Claudia

    2011-11-01

    Soldered contacts between busbar and interconnected ribbon can be missing or defective due to production or exploitation of solar cells. This causes an increase of total series resistance and thus more power losses in soldered solar cells or whole modules. There are many conventional methods for checking missing solder joints such as optical or mechanical; however they are quite complicated for practical application. We present a new method for quantitative and qualitative checking of the solar cell solder contacts. This method is based on analysis of the line-scan diagrams of the electroluminescence images of a solar cell's area by applying the appropriate voltage between front side and backside. As a theoretical justification we have used the equation for calculation of the electroluminescence emission and the equations for calculation of the voltage distribution and of series resistance in the solar cell's busbar.

  4. Theoretical approach of the electroluminescence quenching in (polymer-CdSe quantum dot) nanocomposite

    NASA Astrophysics Data System (ADS)

    Mastour, N.; Mejatty, M.; Bouchriha, H.

    2015-06-01

    A theoretical approach based on the rate equation of exciton density for the electroluminescence quenching in (polymers-quantum dots) nanocomposite is developed. It is shown that the light intensity observed in the nanocomposite depends respectively on the quantum dots concentration, the injected charge carriers, the exciton density, and the Förster energy transfer between polymer and quantum dots. We have found that the significant reduction of the light intensity is related to the exciton density profiles which exhibit a monotonic decrease with the increase of Förster transfer mechanism. Our theoretical approach for the electroluminescence agrees with experimental results observed in hybrid structure (MEH-PPV) with CdSe quantum dots. The maximum of exciton density is also estimated and we have obtained a value for the exciton diffusion length of 10 nm which is consistent with the available experimental results.

  5. Study of microstructure and electroluminescence of zinc sulfide thin film

    NASA Astrophysics Data System (ADS)

    Zhao-hong, Liu; Yu-jiang, Wang; Mou-zhi, Chen; Zhen-xiang, Chen; Shu-nong, Sun; Mei-chun, Huang

    1998-03-01

    The electroluminscent zinc sulfide thin film doped with erbium, fabricated by thermal evaporation with two boats, are examined. The surface and internal electronic states of ZnS thin film are measured by means of x-ray diffraction and x-ray photoemission spectroscopy. The information on the relations between electroluminescent characteristics and internal electronic states of the film is obtained. And the effects of the microstructure of thin film doped with rare earth erbium on electroluminescence are discussed as well.

  6. A Flexible Microcontroller-Based Data Acquisition Device

    PubMed Central

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment. PMID:24892494

  7. A flexible microcontroller-based data acquisition device.

    PubMed

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment. PMID:24892494

  8. Controlled electroluminescence from films composed of mixed bio-composites and nanotubes.

    PubMed

    Hendler, Netta; Mentovich, Elad D; Belgorodsky, Bogdan; Rimmerman, Dolev; Richter, Shachar

    2013-12-16

    Good things come in threes: A new type of light emitting bio-composites allowing for the nanometric separation of the active components is demonstrated. A protein with large host-guest capacities is used for the encapsulation of a water-soluble composite dye in a nano-sized shell, which efficiently reduces Förster resonance energy transfer and related mechanisms. Blending of this bio-composite with multi-walled nanotubes increases the charge injection efficiency, in the electro-luminescent device. PMID:24243738

  9. Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint

    SciTech Connect

    Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

    2011-07-01

    It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

  10. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

    SciTech Connect

    Shi, Zhifeng; Zhang, Yuantao Cui, Xijun; Wu, Bin; Zhuang, Shiwei; Yang, Fan; Zhang, Baolin; Du, Guotong; Yang, Xiaotian

    2014-03-31

    Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

  11. The charge-trapping and triplet-triplet annihilation processes in organic light-emitting diodes: A duty cycle dependence study on magneto-electroluminescence

    NASA Astrophysics Data System (ADS)

    Peng, Qiming; Chen, Ping; Li, Feng

    2013-01-01

    We studied the magneto-electroluminescence (MEL) in tri-(8-hydroxyquinoline)-aluminum (Alq3)-based organic light-emitting devices through both steady-state and transient methods. As the magnetic field increases, the MEL exhibits a rapid rise, followed by the saturation tendency at all voltages in the steady-state measurement, but in the transient measurement it first increases to a maximum and then decreases to negative values when the driving voltages are higher than 8V. Furthermore, we found that the MEL strongly depends on the duty cycle of the pulse voltage. Finally, by employing the triplet-triplet annihilation model combined with the charge trapping effects, we explained the duty cycle dependence of MELs.

  12. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Goldman, J. A.; Brennan, K.

    1988-01-01

    During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

  13. Theoretical and material studies on thin-film electroluminescent devices

    NASA Technical Reports Server (NTRS)

    Summers, C. J.; Benz, R., II

    1987-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as accessed by x ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  14. OLED devices with internal outcoupling

    DOEpatents

    Liu, Jie Jerry; Sista, Srinivas Prasad; Shi, Xiaolei; Zhao, Ri-An; Chichak, Kelly Scott; Youmans, Jeffrey Michael; Janora, Kevin Henry; Turner, Larry Gene

    2015-03-03

    Optoelectronic devices that have enhanced internal outcoupling are disclosed. The devices include a substrate, an anode, a cathode, an electroluminescent layer, and a hole injecting layer. The hole injecting layer includes inorganic nanoparticles that have a bimodal particle size distribution and which are dispersed in an organic matrix.

  15. Innovative energy absorbing devices based on composite tubes

    NASA Astrophysics Data System (ADS)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  16. Flow control concepts for thread-based microfluidic devices

    PubMed Central

    Ballerini, David R.; Li, Xu; Shen, Wei

    2011-01-01

    The emerging concept of thread-based microfluidics has shown great promise for application to inexpensive disease detection and environmental monitoring. To allow the creation of more sophisticated and functional thread-based sensor designs, the ability to better control and understand the flow of fluids in the devices is required. To meet this end, various mechanisms for controlling the flow of reagents and samples in thread-based microfluidic devices are investigated in this study. A study of fluid penetration in single threads and in twined threads provides greater practical understanding of fluid velocity and ultimate penetration for the design of devices. “Switches” which control when or where flow can occur, or allow the mixing of multiple fluids, have been successfully prototyped from multifilament threads, plastic films, and household adhesive. This advancement allows the fabrication of more functional sensory devices which can incorporate more complex detection chemistries, while maintaining low production cost and simplicity of construction. PMID:21483659

  17. Substrate structures for InP-based devices

    DOEpatents

    Wanlass, Mark W.; Sheldon, Peter

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

  18. Nanotube devices based crossbar architecture: toward neuromorphic computing.

    PubMed

    Zhao, W S; Agnus, G; Derycke, V; Filoramo, A; Bourgoin, J-P; Gamrat, C

    2010-04-30

    Nanoscale devices such as carbon nanotube and nanowires based transistors, memristors and molecular devices are expected to play an important role in the development of new computing architectures. While their size represents a decisive advantage in terms of integration density, it also raises the critical question of how to efficiently address large numbers of densely integrated nanodevices without the need for complex multi-layer interconnection topologies similar to those used in CMOS technology. Two-terminal programmable devices in crossbar geometry seem particularly attractive, but suffer from severe addressing difficulties due to cross-talk, which implies complex programming procedures. Three-terminal devices can be easily addressed individually, but with limited gain in terms of interconnect integration. We show how optically gated carbon nanotube devices enable efficient individual addressing when arranged in a crossbar geometry with shared gate electrodes. This topology is particularly well suited for parallel programming or learning in the context of neuromorphic computing architectures. PMID:20368686

  19. Electroluminescence of different colors from polycation/CdTe nanocrystal self-assembled films

    NASA Astrophysics Data System (ADS)

    Gao, Mingyuan; Lesser, Constanze; Kirstein, Stefan; Möhwald, Helmuth; Rogach, Andrey L.; Weller, Horst

    2000-03-01

    Water soluble thiol capped CdTe nanocrystals are assembled into ultrathin films in combination with poly(diallyldimethylammonium chloride) (PDDA) by the self-assembly method of layer-by-layer adsorption of oppositely charged polyelectrolytes. Electroluminescent devices, which produce different color emissions, are fabricated by sandwiching CdTe/PDDA films between indium-tin-oxide (ITO) and aluminum electrodes using CdTe nanocrystals of different sizes. It is shown that the electroluminescence (EL) spectra of the CdTe/polymer films are nearly identical to the photoluminescence spectra of the corresponding CdTe nanocrystals in aqueous solutions. The devices produce room-light visible light output with an external quantum efficiency up to 0.1%. Light emission is observed at current densities of 10 mA/cm2 and at low onset voltages of 2.5-3.5 V, which depends on the thickness of the film indicating field-dependent current injection. A variation of the EL efficiency with the size of the CdTe particles is observed and explained by the size dependent shift of the CdTe energy levels with respect to the work function of the electron injecting Al electrode. This is confirmed by the behavior of two-layer devices prepared from two differently sized CdTe particles being spatially separated, i.e., one size CdTe near ITO and the other size CdTe near Al by using the self-assembly method.

  20. Medical Device Integration Model Based on the Internet of Things

    PubMed Central

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  1. Medical Device Integration Model Based on the Internet of Things.

    PubMed

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  2. Synthesis and spectroscopic study of highly fluorescent β-enaminone based boron complexes

    NASA Astrophysics Data System (ADS)

    Kumbhar, Haribhau S.; Gadilohar, Balu L.; Shankarling, Ganapati S.

    2015-07-01

    The newly synthesized 1, 1, 2-trimethyl-1H benzo[e]indoline based β-enaminone boron complexes exhibited the intense fluorescence (Fmax = 522-547 nm) in solution as well as in solid state (Fmax = 570-586 nm). These complexes exhibited large stoke shift, excellent thermal and photo stability when compared to the boron dipyrromethene (BODIPY) colorants. Optimized geometry and orbital distribution in ground states were computed by employing density functional theory (DFT). The cyclic voltammetry study revealed the better electron transport ability of these molecules than current electroluminescent materials like tris(8-hydroxyquinoli-nato)-aluminium (Alq3) and BODIPY, which can find application in electroluminescent devices.

  3. Photonic devices based on preferential etching.

    PubMed

    Bellini, Bob; Larchanché, Jean-François; Vilcot, Jean-Pierre; Decoster, Didier; Beccherelli, Romeo; d'Alessandro, Antonio

    2005-11-20

    We introduce a design concept of optical waveguides characterized by a practical and reproducible process based on preferential etching of crystalline silicon substrates. Low-loss waveguides, spot-size converters, and power dividers have been obtained with polymers. We have also aligned liquid crystals in the waveguides and demonstrated guided propagation. Therefore this technology is a suitable platform for soft-matter photonics and heterogeneous integration. PMID:16318190

  4. A Rhythm-Based Authentication Scheme for Smart Media Devices

    PubMed Central

    Lee, Jae Dong; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience. PMID:25110743

  5. A rhythm-based authentication scheme for smart media devices.

    PubMed

    Lee, Jae Dong; Jeong, Young-Sik; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience. PMID:25110743

  6. A point acoustic device based on aluminum nanowires.

    PubMed

    Xie, Qian-Yi; Ju, Zhen-Yi; Tian, He; Xue, Qing-Tang; Chen, Yuan-Quan; Tao, Lu-Qi; Mohammad, Mohammad Ali; Zhang, Xue-Yue; Yang, Yi; Ren, Tian-Ling

    2016-03-14

    A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 kHz to 20 kHz with a less than ±3 dB fluctuation. The highest normalized Sound Pressure Level (SPL) of the point contact structure acoustic device is 18 dB higher than the suspended aluminum wire acoustic device. Comparisons between the PCS acoustic device and the Suspended Aluminum Nanowire (SAN) acoustic device illustrate that the PCS acoustic device has a flatter power spectrum within the 20 kHz range, and enhances the SPL at a lower frequency. Enhancing the response at lower frequencies is extremely useful, which may enable earphone and loudspeaker applications within the frequency range of the human ear with the help of pulse density modulation. PMID:26787399

  7. Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices

    PubMed Central

    O'Toole, Martina; Diamond, Dermot

    2008-01-01

    The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements.

  8. Mobile device-based optical instruments for agriculture

    NASA Astrophysics Data System (ADS)

    Sumriddetchkajorn, Sarun

    2013-05-01

    Realizing that a current smart-mobile device such as a cell phone and a tablet can be considered as a pocket-size computer embedded with a built-in digital camera, this paper reviews and demonstrates on how a mobile device can be specifically functioned as a portable optical instrument for agricultural applications. The paper highlights several mobile device-based optical instruments designed for searching small pests, measuring illumination level, analyzing spectrum of light, identifying nitrogen status in the rice field, estimating chlorine in water, and determining ripeness level of the fruit. They are suitable for individual use as well as for small and medium enterprises.

  9. Magneto-optical switching devices based on Si resonators

    NASA Astrophysics Data System (ADS)

    Noda, Kazuki; Okada, Kazuya; Amemiya, Yoshiteru; Yokoyama, Shin

    2016-04-01

    The magneto-optical switching devices based on Si ring and Si photonic crystal resonators have been fabricated using a Bi3Fe5O12 (BIG) film deposited by the metal organic decomposition (MOD) method. The quality of the obtained BIG film was evaluated by X-ray diffraction and the magneto-optical Kerr effect and relatively good results were obtained. The light modulations of both devices were ≦20% at a wavelength of ˜1.5 µm. The operation mechanisms of both devices are explained by the Cotton-Mouton effect where the magnetic field direction is perpendicular to the light propagation direction.

  10. Electrochemical model of the polyaniline based organic memristive device

    NASA Astrophysics Data System (ADS)

    Demin, V. A.; Erokhin, V. V.; Kashkarov, P. K.; Kovalchuk, M. V.

    2014-08-01

    The electrochemical organic memristive device with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, including the neuromorphic networks capable for learning. In this work, a new theoretical model of the polyaniline memristive is presented. The developed model of organic memristive functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment but also the quantitative similarities of the resultant current values. It is shown how the memristive could behave at zero potential difference relative to the reference electrode. This improved model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices.

  11. Electrochemical model of the polyaniline based organic memristive device

    SciTech Connect

    Demin, V. A. E-mail: victor.erokhin@fis.unipr.it; Erokhin, V. V. E-mail: victor.erokhin@fis.unipr.it; Kashkarov, P. K.; Kovalchuk, M. V.

    2014-08-14

    The electrochemical organic memristive device with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, including the neuromorphic networks capable for learning. In this work, a new theoretical model of the polyaniline memristive is presented. The developed model of organic memristive functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment but also the quantitative similarities of the resultant current values. It is shown how the memristive could behave at zero potential difference relative to the reference electrode. This improved model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices.

  12. Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices

    NASA Astrophysics Data System (ADS)

    López-Vidrier, J.; Berencén, Y.; Hernández, S.; Blázquez, O.; Gutsch, S.; Laube, J.; Hiller, D.; Löper, P.; Schnabel, M.; Janz, S.; Zacharias, M.; Garrido, B.

    2013-10-01

    Charge transport and electroluminescence mechanisms in Si-rich Si oxynitride/silicon oxide (SRON/SiO2) superlattices deposited on p-type Si substrate are reported. The superlattice structures were deposited by plasma-enhanced chemical-vapor deposition and subsequently annealed at 1150 °C to precipitate and crystallize the Si excess into Si nanocrystals. The dependence of the electrical conduction on the applied voltage and temperature was found to be well described by a Poole-Frenkel transport mechanism over a wide voltage range. On the other hand, the observed dependence of the electroluminescence on the SRON layer thickness is a clear proof of quantum confinement and was attributed to an excitonic radiative recombination taking place in the confined states within the Si quantum dots. A model is proposed based on thermal hopping of electrons between the quantum dots acting as trap states (Poole-Frenkel). A correlation between carrier transport and electroluminescence has been established considering impact ionization of high-kinetic energy electrons on the Si quantum dots.

  13. Hybrid device based on GaN nanoneedles and MEH-PPV/PEDOT:PSS polymer

    SciTech Connect

    Shin, Min Jeong; Gwon, Dong-Oh; Lee, Chan-Mi; Lee, Gang Seok; Jeon, In-Jun; Ahn, Hyung Soo; Yi, Sam Nyung; Ha, Dong Han

    2015-08-15

    Highlights: • A hybrid device was demonstrated by using MEH-PPV, PEDOT:PSS, and GaN nanoneedles. • I–V curve of the hybrid device showed its rectification behaviour, similar to a diode. • EL peak originated by the different potential barriers at MEH-PPV and GaN interface. - Abstract: A hybrid device that combines the properties of organic and inorganic semiconductors was fabricated and studied. It incorporated poly[2-methoxy-5-(2-ethylhexyloxy)- 1,4-phenylenevinylene] (MEH-PPV) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as organic polymers and GaN nanoneedles as an inorganic semiconductor. Layers of the two polymers were spin coated on to the GaN nanoneedles. The one peak in the electroluminescence spectrum originated from the MEH-PPV layer owing to the different potential barriers of electrons and holes at its interface with the GaN nanoneedles. However, the photoluminescence spectrum showed peaks due to both GaN nanoneedles and MEH-PPV. Such hybrid structures, suitably developed, might be able to improve the efficiency of optoelectronic devices.

  14. Terahertz biochip based on optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Lu, Ja-Yu; Chen, Li-Jin; Kao, Tzeng-Fu; Chang, Hsu-Hao; Liu, An-Shyi; Yu, Yi-Chun; Wu, Ruey-Beei; Liu, Wei-Sheng; Chyi, Jen-Inn; Pan, Ci-Ling; Tsai, Ming-Cheng; Sun, Chi-Kuang

    2005-10-01

    The accurate detection of minute amounts of chemical and biological substances has been a major goal in bioanalytical technology throughout the twentieth century. Fluorescence dye labeling detection remains the effective analysis method, but it modifies the surroundings of molecules and lowering the precision of detection. An alternative label free detecting tool with little disturbance of target molecules is highly desired. Theoretical calculations and experiments have demonstrated that many biomolecules have intrinsic resonance due to vibration or rotation level transitions, allowing terahertz (THz)-probing technique as a potential tool for the label-free and noninvasive detection of biomolecules. In this paper, we first ever combined the THz optoelectronic technique with biochip technology to realize THz biosensing. By transferring the edge-coupled photonic transmitter into a thin glass substrate and by integrating with a polyethylene based biochip channel, near field THz detection of the biomolecules is demonstrated. By directly acquiring the absorption micro-spectrum in the THz range, different boiomecules can then be identified according to their THz fingerprints. For preliminary studies, the capability to identity different illicit drug powders is successfully demonstrated. This novel biochip sensing system has the advantages including label-free detection, high selectivity, high sensitivity, ease for sample preparation, and ease to parallel integrate with other biochip functionality modules. Our demonstrated detection capability allows specifying various illicit drug powders with weight of nano-gram, which also enables rapid identification with minute amounts of other important molecules including DNA, biochemical agents in terrorism warfare, explosives, viruses, and toxics.

  15. A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon

    SciTech Connect

    Evtukh, A. A. Kaganovich, E. B.; Manoilov, E. G.; Semenenko, N. A.

    2006-02-15

    Electroluminescent structures that emit in the visible region of the spectrum and are based on porous silicon (por-Si) formed on the p-Si substrate electrolytically using an internal current source are fabricated. The photoluminescent and electroluminescent properties, as well as the current-and capacitance-voltage characteristics of the structures are studied. Electroluminescence is observed only if the forward bias voltage is applied to the structure; the electroluminescence mechanism is based on the injection and is related to the radiative recombination of electrons and holes in quantum-dimensional Si nanocrystals. The injection of holes is controlled by the condition of their accumulation in the space-charge region of p-Si and by a comparatively low concentration of electronic states at the por-Si/p-Si interface. The charge transport in por-Si is caused by the direct tunneling of charge carriers between the quantum-mechanical levels, which is ensured by an appreciable number of quantum-dimensional Si nanocrystals. The leakage currents are low as a result of a small variance in the sizes of Si nanocrystals and the absence of comparatively large nanocrystals.

  16. Pure white OLED based on an organic small molecule: 2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine

    NASA Astrophysics Data System (ADS)

    Liu, Jian

    2015-10-01

    2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine (DBIP) was synthesized. The single-crystal structure of DBIP was resolved. DBIP-based OLED was fabricated. The electroluminescence for the device corresponds to a pure white emission. In addition, thermal stability, UV-vis, photoluminescence and electrochemical behaviors of DBIP were investigated as well.

  17. Pure white OLED based on an organic small molecule: 2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine.

    PubMed

    Liu, Jian

    2015-10-01

    2,6-Di(1H-benzo[d]imidazol-2-yl)pyridine (DBIP) was synthesized. The single-crystal structure of DBIP was resolved. DBIP-based OLED was fabricated. The electroluminescence for the device corresponds to a pure white emission. In addition, thermal stability, UV-vis, photoluminescence and electrochemical behaviors of DBIP were investigated as well. PMID:25942084

  18. MOF-based electronic and opto-electronic devices.

    PubMed

    Stavila, V; Talin, A A; Allendorf, M D

    2014-08-21

    Metal-organic frameworks (MOFs) are a class of hybrid materials with unique optical and electronic properties arising from rational self-assembly of the organic linkers and metal ions/clusters, yielding myriads of possible structural motifs. The combination of order and chemical tunability, coupled with good environmental stability of MOFs, are prompting many research groups to explore the possibility of incorporating these materials as active components in devices such as solar cells, photodetectors, radiation detectors, and chemical sensors. Although this field is only in its incipiency, many new fundamental insights relevant to integrating MOFs with such devices have already been gained. In this review, we focus our attention on the basic requirements and structural elements needed to fabricate MOF-based devices and summarize the current state of MOF research in the area of electronic, opto-electronic and sensor devices. We summarize various approaches to designing active MOFs, creation of hybrid material systems combining MOFs with other materials, and assembly and integration of MOFs with device hardware. Critical directions of future research are identified, with emphasis on achieving the desired MOF functionality in a device and establishing the structure-property relationships to identify and rationalize the factors that impact device performance. PMID:24802763

  19. Improved electroluminescence of ZnS:Mn thin films by codoping with potassium chloride

    NASA Astrophysics Data System (ADS)

    Waldrip, K. E.; Lewis, J. S.; Zhai, Q.; Puga-Lambers, M.; Davidson, M. R.; Holloway, P. H.; Sun, S.-S.

    2001-02-01

    Alternating current thin film electroluminescent devices have been fabricated using sputter-deposited ZnS:Mn with and without codoped potassium chloride via both in situ and ex situ methods. In situ codoping proved to be difficult due to a memory effect in the deposition chamber. Samples codoped with potassium chloride via an ex situ diffusion method exhibited improvements in brightness of up to 70% (572 vs 337 cd/m2) and efficiency of up to 60% (1.95 vs 1.25 lm/W) over noncodoped samples. The threshold voltage increased by ≈5% (160 vs 168 V), and the brightness-versus-voltage curve stabilized more rapidly for the devices. Several possible mechanisms to explain these effects are discussed. While modest microstructural changes contribute to the improvements, changes in point defects which lead to modification of the space charge in the devices appears to be the dominant mechanism.

  20. Magnetophoretic-based microfluidic device for DNA Concentration.

    PubMed

    Shim, Sangjo; Shim, Jiwook; Taylor, William R; Kosari, Farhad; Vasmatzis, George; Ahlquist, David A; Bashir, Rashid

    2016-04-01

    Nucleic acids serve as biomarkers of disease and it is highly desirable to develop approaches to extract small number of such genomic extracts from human bodily fluids. Magnetic particles-based nucleic acid extraction is widely used for concentration of small amount of samples and is followed by DNA amplification in specific assays. However, approaches to integrate such magnetic particles based capture with micro and nanofluidic based assays are still lacking. In this report, we demonstrate a magnetophoretic-based approach for target-specific DNA extraction and concentration within a microfluidic device. This device features a large chamber for reducing flow velocity and an array of μ-magnets for enhancing magnetic flux density. With this strategy, the device is able to collect up to 95 % of the magnetic particles from the fluidic flow and to concentrate these magnetic particles in a collection region. Then an enzymatic reaction is used to detach the DNA from the magnetic particles within the microfluidic device, making the DNA available for subsequent analysis. Concentrations of over 1000-fold for 90 bp dsDNA molecules is demonstrated. This strategy can bridge the gap between detection of low concentration analytes from clinical samples and a range of micro and nanofluidic sensors and devices including nanopores, nano-cantilevers, and nanowires. PMID:26899965

  1. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  2. High Density Memory Based on Quantum Device Technology

    NASA Technical Reports Server (NTRS)

    vanderWagt, Paul; Frazier, Gary; Tang, Hao

    1995-01-01

    We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

  3. Trion electroluminescence from semiconducting carbon nanotubes.

    PubMed

    Jakubka, Florian; Grimm, Stefan B; Zakharko, Yuriy; Gannott, Florentina; Zaumseil, Jana

    2014-08-26

    Near-infrared emission from semiconducting single-walled carbon nanotubes (SWNTs) usually results from radiative relaxation of excitons. By binding an additional electron or hole through chemical or electrochemical doping, charged three-body excitons, so-called trions, are created that emit light at lower energies. The energy difference is large enough to observe weak trion photoluminescence from doped SWNTs even at room temperature. Here, we demonstrate strong trion electroluminescence from electrolyte-gated, light-emitting SWNT transistors with three different polymer-sorted carbon nanotube species, namely, (6,5), (7,5) and (10,5). The red-shifted trion emission is equal to or even stronger than the exciton emission, which is attributed to the high charge carrier density in the transistor channel. The possibility of trions as a radiative relaxation pathway for triplets and dark excitons that are formed in large numbers by electron-hole recombination is discussed. The ratio of trion to exciton emission can be tuned by the applied voltages, enabling voltage-controlled near-infrared light sources with narrow line widths that are solution-processable and operate at low voltages (<3 V). PMID:25029479

  4. Silicon Nanowire-Based Devices for Gas-Phase Sensing

    PubMed Central

    Cao, Anping; Sudhölter, Ernst J.R.; de Smet, Louis C.P.M.

    2014-01-01

    Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW-based devices is increasing. This review gives an overview of selected research papers related to the application of electrical SiNW-based devices in the gas phase that have been reported over the past 10 years. Special attention is given to surface modification strategies and the sensing principles involved. In addition, future steps and technological challenges in this field are addressed. PMID:24368699

  5. Bandwidth evaluation of dispersive transformation electromagnetics based devices

    NASA Astrophysics Data System (ADS)

    Argyropoulos, C.; Kallos, E.; Hao, Y.

    2011-06-01

    In this paper, the transient responses of some devices which are based on transformation electromagnetics are studied, such as invisible cloaks and concentrators, by using the Finite-Difference Time-Domain (FDTD) numerical technique. In particular, effects of the inherent losses as well as the coating size of the ideal cylindrical cloak on its bandwidth and cloaking performance are examined. In addition, it is demonstrated that the performance of transformation electromagnetics based devices is affected by the material parameters in the design, although they may behave nicely under monochromatic plane wave illuminations. The obtained results are of interest for the future practical implementation of these structures.

  6. Accelerated UV weathering device based on integrating sphere technology

    SciTech Connect

    Chin, Joannie; Byrd, Eric; Embree, Ned; Garver, Jason; Dickens, Brian; Finn, Tom; Martin, Jonathan

    2004-11-01

    An ultraviolet (UV) weathering device based on integrating sphere technology has been designed, fabricated, and implemented for studying the accelerated weathering of polymers. This device has the capability of irradiating multiple test specimens with uniform, high intensity UV radiation while simultaneously subjecting them to a wide range of precisely and independently controlled temperature and relative humidity environments. This article describes the integrating sphere-based weathering system, its ability to precisely control temperature and relative humidity, and its ability to produce a highly uniform UV irradiance.

  7. Moisture exposure to different layers in organic light-emitting diodes and the effect on electroluminescence characteristics

    SciTech Connect

    Liao, L. S.; Tang, C. W.

    2008-08-15

    Moisture effect on electroluminescence characteristics, including current density versus voltage, luminance versus voltage, luminous efficiency versus current density, dark spot formation, and operational stability of organic light-emitting diodes, has been systematically investigated by exposing each layer of the devices to moisture at room temperature. Moisture has a different effect on each of the interfaces or surfaces, and the influence increases as exposure time increases. There is a slight effect on the electroluminescence characteristics after the anode surface has been exposed to moisture. However, severe luminance decrease, dark spot formation, and operational stability degradation take place after the light-emitting layer or the electron-transporting layer is exposed to moisture. It is also demonstrated that the effect of moisture can be substantially reduced if the exposure to moisture is in a dark environment.

  8. Uncover the electroluminescence in wide band gap polymers

    NASA Astrophysics Data System (ADS)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    2015-10-01

    Due to the rapidly increasing demand of electric power, insulating materials used in electrical components are pushed up to their limits, where their electronic properties are of fundamental importance. Electroluminescence provides an elegant way to investigate electronic properties, high field effects and electrical ageing of polymers although the emission spectrum is still poorly understood. Unlike in organic semi-conductors, electroluminescence spectra of large band gap polymers exhibit specific spectral features that cannot be interpreted on the basis of the photo-physical properties of the material. By irradiating polypropylene thin films with electrons up to a few keV and by analyzing the emitted light, we were able to isolate the elementary components of the emission and to reconstruct the electroluminescence spectrum. For the first time, a comprehensive study of electroluminescence in polymers is provided and the underlying mechanisms of the emission are discussed. The results herein provide an univocal demonstration that the electroluminescence from wide band gap polymers results in part from chemical reactions, opening the way to the diagnosis and prognosis of polymeric materials under electrical stress.

  9. Highly efficient polymer phosphorescent light-emitting devices based on a new polyfluorene derivative as host

    NASA Astrophysics Data System (ADS)

    Wang, Bao-Zheng; Liu, Jie; Wu, Hong-Bin; Zhang, Bin; Wen, Shang-Sheng; Yang, Wei

    2011-08-01

    Several highly efficient iridium-complex polymer light-emitting devices (PLEDs) are fabricated, with a newly synthesized blue conjugated polymer, poly[(9,9-bis(4-(2-ethylhexyloxy)phenyl)-fluorene)-co-(3,7-dibenziothiene-S,S-dioxide15)] (PPF-3,7SO15), chosen as host. High luminous efficiencies of 7.4 cd·A-1 and 27.4 cd·A-1 are achieved in red and green PLEDs, respectively, by optimizing the doping concentrations of red phosphorescent dye iridium bis(1-phenylisoquinoline) (acetylacetonate) (Ir(piq)) and green phosphorescent dye iridium tris(2-(4-tolyl)pyridinato-N, C2') (Ir(mppy)3). Furthermore, highly efficient white PLEDs (WPLEDs) with the Commission Internationale de l'Eclairage (CIE) coordinates of (0.35, 0.38) are successfully produced by carefully controlling the doping concentration of the iridium complex. The obtained WPLEDs show maximal efficiencies of 14.4 cd·A-1 and 10.1 lm·W-1, which are comparable to those of incandescent bulbs. Moreover, the electroluminescent spectrum of the white device with an initial luminance of about 1000 cd·m-2 is stable, subject to constant applied current stress, indicating that good device stability can be obtained in this system.

  10. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    SciTech Connect

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. A point acoustic device based on aluminum nanowires

    NASA Astrophysics Data System (ADS)

    Xie, Qian-Yi; Ju, Zhen-Yi; Tian, He; Xue, Qing-Tang; Chen, Yuan-Quan; Tao, Lu-Qi; Mohammad, Mohammad Ali; Zhang, Xue-Yue; Yang, Yi; Ren, Tian-Ling

    2016-03-01

    A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 kHz to 20 kHz with a less than +/-3 dB fluctuation. The highest normalized Sound Pressure Level (SPL) of the point contact structure acoustic device is 18 dB higher than the suspended aluminum wire acoustic device. Comparisons between the PCS acoustic device and the Suspended Aluminum Nanowire (SAN) acoustic device illustrate that the PCS acoustic device has a flatter power spectrum within the 20 kHz range, and enhances the SPL at a lower frequency. Enhancing the response at lower frequencies is extremely useful, which may enable earphone and loudspeaker applications within the frequency range of the human ear with the help of pulse density modulation.A point Electrical Thermal Acoustic (ETA) device based on aluminum nanowire contacts is designed and fabricated. Interdigitated structural aluminum nanowires are released from the substrate by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE). By releasing the interdigitated structure, the nanowires contact each other at approximately 1 mm above the wafer, forming a Point Contact Structure (PCS). It is found that the PCS acoustic device realizes high efficiency when a biased AC signal is applied. The PCS acoustic device reaches a sound pressure level as high as 67 dB at a distance of 1 cm with 74 mW AC input. The power spectrum is flat, ranging from 2 k

  12. Fixed Junction Photovoltaic Devices Based On Polymerizable Ionic Liquids

    NASA Astrophysics Data System (ADS)

    Limanek, Austin; Leger, Janelle, , Dr.

    Recently, polymer-based photovoltaic devices (PPVs) have received significant attention as a possible affordable, large area and flexible solar energy technology. In particular, research on chemically fixed p-i-n junctions in polymer photovoltaic devices has shown promising results. These devices are composed of ionic monomers in a polymer matrix sandwiched between two electrodes. When a potential is applied, the ionic monomers migrate towards their corresponding electrodes, enabling electrochemical doping of the polymer. This leads to the formation of bonds between the polymer and ionic monomers, resulting in the formation of a chemically fixed p-i-n junction. However, early devices suffered from long charging times and low overall response. This has been attributed to the low phase compatibility between the ionic monomers and the polymer. It has been shown for light-emitting electrochemical cells, replacing the ionic monomers with polymerizable ionic liquids (PILs) mitigates these challenges. We will present the use of PILs as the dopant in fixed junction PPV devices. Preliminary devices demonstrate significantly improved performance, decreased charging times, and high open circuit voltages. This research supported by the National Science Foundation DMR-1057209.

  13. Switchable Solar Window Devices Based on Polymer Dispersed Liquid Crystals

    NASA Astrophysics Data System (ADS)

    Murray, Joseph; Ma, Dakang; Munday, Jeremy

    Windows are an interesting target for photovoltaics due to the potential for large area of deployment and because glass is already a ubiquitous component of solar cell devices. Many demonstrations of solar windows in recent years have used photovoltaic devices which are semitransparent in the visible region. Much research has focused on enhancing device absorption in the UV and IR ranges as a means to circumvent the basic tradeoff between efficiency and transparency to visible light. Use of switchable solar window is a less investigated alternative approach; these windows utilize the visible spectrum but can toggle between high transparency and high efficiency as needed. We present a novel switchable solar window device based on Polymer Dispersed Liquid Crystals (PDLC). By applying an electric field to the PDLC layer, the device can be switched from an opaque, light diffusing, efficient photovoltaic cell to a clear, transparent window. In the off state (i.e. scattering state), these devices have the added benefits of increased reflectivity for reduced lighting and cooling costs and haze for privacy. Further, we demonstrate that these windows have the potential for self-powering due to the very low power required to maintain the on, or high transparency, state. Support From: University of Maryland and Maryland Nano-center and its Fablab.

  14. Micro Electromechanical Systems (MEMS) Based Microfluidic Devices for Biomedical Applications

    PubMed Central

    Ashraf, Muhammad Waseem; Tayyaba, Shahzadi; Afzulpurkar, Nitin

    2011-01-01

    Micro Electromechanical Systems (MEMS) based microfluidic devices have gained popularity in biomedicine field over the last few years. In this paper, a comprehensive overview of microfluidic devices such as micropumps and microneedles has been presented for biomedical applications. The aim of this paper is to present the major features and issues related to micropumps and microneedles, e.g., working principles, actuation methods, fabrication techniques, construction, performance parameters, failure analysis, testing, safety issues, applications, commercialization issues and future prospects. Based on the actuation mechanisms, the micropumps are classified into two main types, i.e., mechanical and non-mechanical micropumps. Microneedles can be categorized according to their structure, fabrication process, material, overall shape, tip shape, size, array density and application. The presented literature review on micropumps and microneedles will provide comprehensive information for researchers working on design and development of microfluidic devices for biomedical applications. PMID:21747700

  15. Tunable Near-Infrared Luminescence in Tin Halide Perovskite Devices.

    PubMed

    Lai, May L; Tay, Timothy Y S; Sadhanala, Aditya; Dutton, Siân E; Li, Guangru; Friend, Richard H; Tan, Zhi-Kuang

    2016-07-21

    Infrared emitters are reasonably rare in solution-processed materials. Recently, research into hybrid organo-lead halide perovskite, originally popular in photovoltaics,1-3 has gained traction in light-emitting diodes (LED) due to their low-cost solution processing and good performance.4-9 The lead-based electroluminescent materials show strong colorful emission in the visible region, but lack emissive variants further in the infrared. The concerns with the toxicity of lead may, additionally, limit their wide-scale applications. Here, we demonstrate tunable near-infrared electroluminescence from a lead-free organo-tin halide perovskite, using an ITO/PEDOT:PSS/CH3NH3Sn(Br1-xIx)3/F8/Ca/Ag device architecture. In our tin iodide (CH3NH3SnI3) LEDs, we achieved a 945 nm near-infrared emission with a radiance of 3.4 W sr(-1) m(-2) and a maximum external quantum efficiency of 0.72%, comparable with earlier lead-based devices. Increasing the bromide content in these tin perovskite devices widens the semiconductor bandgap and leads to shorter wavelength emissions, tunable down to 667 nm. These near-infrared LEDs could find useful applications in a range of optical communication, sensing and medical device applications. PMID:27336412

  16. Device-independent bit commitment based on the CHSH inequality

    NASA Astrophysics Data System (ADS)

    Aharon, N.; Massar, S.; Pironio, S.; Silman, J.

    2016-02-01

    Bit commitment and coin flipping occupy a unique place in the device-independent landscape, as the only device-independent protocols thus far suggested for these tasks are reliant on tripartite GHZ correlations. Indeed, we know of no other bipartite tasks, which admit a device-independent formulation, but which are not known to be implementable using only bipartite nonlocality. Another interesting feature of these protocols is that the pseudo-telepathic nature of GHZ correlations—in contrast to the generally statistical character of nonlocal correlations, such as those arising in the violation of the CHSH inequality—is essential to their formulation and analysis. In this work, we present a device-independent bit commitment protocol based on CHSH testing, which achieves the same security as the optimal GHZ-based protocol, albeit at the price of fixing the time at which Alice reveals her commitment. The protocol is analyzed in the most general settings, where the devices are used repeatedly and may have long-term quantum memory. We also recast the protocol in a post-quantum setting where both honest and dishonest parties are restricted only by the impossibility of signaling, and find that overall the supra-quantum structure allows for greater security.

  17. Mini array of quantum Hall devices based on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-05-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10-7) limited by the used resistance bridge.

  18. Game theory-based mode cooperative selection mechanism for device-to-device visible light communication

    NASA Astrophysics Data System (ADS)

    Liu, Yuxin; Huang, Zhitong; Li, Wei; Ji, Yuefeng

    2016-03-01

    Various patterns of device-to-device (D2D) communication, from Bluetooth to Wi-Fi Direct, are emerging due to the increasing requirements of information sharing between mobile terminals. This paper presents an innovative pattern named device-to-device visible light communication (D2D-VLC) to alleviate the growing traffic problem. However, the occlusion problem is a difficulty in D2D-VLC. This paper proposes a game theory-based solution in which the best-response dynamics and best-response strategies are used to realize a mode-cooperative selection mechanism. This mechanism uses system capacity as the utility function to optimize system performance and selects the optimal communication mode for each active user from three candidate modes. Moreover, the simulation and experimental results show that the mechanism can attain a significant improvement in terms of effectiveness and energy saving compared with the cases where the users communicate via only the fixed transceivers (light-emitting diode and photo diode) or via only D2D.

  19. Devices in heart failure: potential methods for device-based monitoring of congestive heart failure.

    PubMed

    Munir, Shahzeb M; Bogaev, Roberta C; Sobash, Ed; Shankar, K J; Gondi, Sreedevi; Stupin, Igor V; Robertson, Jillian; Brewer, M Alan; Casscells, S Ward; Delgado, Reynolds M; Ahmed, Amany

    2008-01-01

    Congestive heart failure has long been one of the most serious medical conditions in the United States; in fact, in the United States alone, heart failure accounts for 6.5 million days of hospitalization each year. One important goal of heart-failure therapy is to inhibit the progression of congestive heart failure through pharmacologic and device-based therapies. Therefore, there have been efforts to develop device-based therapies aimed at improving cardiac reserve and optimizing pump function to meet metabolic requirements. The course of congestive heart failure is often worsened by other conditions, including new-onset arrhythmias, ischemia and infarction, valvulopathy, decompensation, end-organ damage, and therapeutic refractoriness, that have an impact on outcomes. The onset of such conditions is sometimes heralded by subtle pathophysiologic changes, and the timely identification of these changes may promote the use of preventive measures. Consequently, device-based methods could in the future have an important role in the timely identification of the subtle pathophysiologic changes associated with congestive heart failure. PMID:18612451

  20. Microcomputer based test system for charge coupled devices

    SciTech Connect

    Sidman, S.

    1981-02-01

    A microcomputer based system for testing analog charge coupled integrated circuits has been developed. It measures device performance for three parameters: dynamic range, baseline shift due to leakage current, and transfer efficiency. A companion board tester has also been developed. The software consists of a collection of BASIC and assembly language routines developed on the test system microcomputer.

  1. Field-Based Experiential Learning Using Mobile Devices

    NASA Astrophysics Data System (ADS)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  2. Biomolecular electronic devices based on self-organized deoxyguanosine nanocrystals.

    PubMed

    Rinaldi, Ross; Branca, Emanuela; Cingolani, Roberto; Di Felice, Rosa; Calzolari, Arrigo; Molinari, Elisa; Masiero, Salvatore; Spada, Gianpero; Gottarelli, Giovanni; Garbesi, Anna

    2002-04-01

    We report on a new class of hybrid electronic devices based on a DNA nucleoside (deoxyguanosine lipophilic derivative) whose assembled polymeric ribbons interconnect a submicron metallic gate. The device exhibits large conductivity at room temperature, rectifying behavior and strong current-voltage hysteresis. The transport mechanism through the molecules is investigated by comparing films with different self-assembling morphology. We found that the main transport mechanism is connected to pi-pi interactions between guanosine molecules and to the formation of a strong dipole along ribbons, consistently with the results of our first-principles calculations. PMID:11971799

  3. Electrocaloric devices based on thini-film heat switches

    SciTech Connect

    Epstein, Richard I; Malloy, Kevin J

    2009-01-01

    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  4. Si-photonics based passive device packaging and module performance.

    PubMed

    Song, Jeong Hwan; Zhang, Jing; Zhang, Huijuan; Li, Chao; Lo, Guo Qiang

    2011-09-12

    We report a fully packaged silicon passive waveguide device designed for a tunable filter based on a ring-resonator. Polarization diversity circuits prevent polarization dependant issues in the silicon ring-resonator. For the device packaging, the YAG laser welding technique has been used for pigtailing both of the input and output fibers. Post welding misalignment was compensated by mechanical fine tuning using the seesaw effect via power monitoring. Packaging loss less than 1.5 dB with respect to chip measurement has been achieved using 10 µm-curvature radius lensed fibers. In addition, the packaging process and the module performance are presented. PMID:21935167

  5. CPV solar receiver ageing tests: The enhanced electroluminescence method

    NASA Astrophysics Data System (ADS)

    Mabille, Loïc; Mangeant, Christophe; Baudrit, Mathieu

    2013-09-01

    For two years now, CEA INES is involved in the development of insulated metal substrates (IMS) for CPV receivers. In an effort for establishing the reliability of such a new design compared to state-of-the-art direct bonded copper (DBC) design, accelerated ageing test have been carried out. During these tests, several characterization tools were used including current voltage measurements, X-ray tomography and electroluminescence. A new method for the characterization of thermal inhomogeneities has been developed, the so-called Enhanced Electroluminescence (EEL) which is described in this paper.

  6. A triple quantum dot based nano-electromechanical memory device

    SciTech Connect

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-14

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  7. Quantum key distribution based on quantum dimension and independent devices

    NASA Astrophysics Data System (ADS)

    Li, Hong-Wei; Yin, Zhen-Qiang; Chen, Wei; Wang, Shuang; Guo, Guang-Can; Han, Zheng-Fu

    2014-03-01

    In this paper, we propose a quantum key distribution (QKD) protocol based on only a two-dimensional Hilbert space encoding a quantum system and independent devices between the equipment for state preparation and measurement. Our protocol is inspired by the fully device-independent quantum key distribution (FDI-QKD) protocol and the measurement-device-independent quantum key distribution (MDI-QKD) protocol. Our protocol only requires the state to be prepared in the two-dimensional Hilbert space, which weakens the state preparation assumption in the original MDI-QKD protocol. More interestingly, our protocol can overcome the detection loophole problem in the FDI-QKD protocol, which greatly limits the application of FDI-QKD. Hence our protocol can be implemented with practical optical components.

  8. New memory devices based on the proton transfer process.

    PubMed

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge-saturated with oxygen or the hydroxy group-and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. PMID:26596910

  9. Gas sensors based on silicon devices with a porous layer

    NASA Astrophysics Data System (ADS)

    Barillaro, G.; Diligenti, A.; Nannini, A.; Strambini, L. M.

    2005-06-01

    In this work two silicon devices, that is a FET and a p crystalline silicon resistor having porous silicon as adsorbing layer are presented as gas sensors. Owing to they are easily integrable with silicon electronics, these devices could represent an improvement of the functionality of silicon for sensor applications. Unlike other porous silicon-based sensors, in this case the sensing variable is a current flowing in the crystalline silicon, so that the porous silicon film has only the function of adsorbing layer and its properties, electrical or optical, are not directly involved in the measurement. The fabrication processes and an electrical characterization in presence of isopropanol vapors are presented and discussed for both devices.

  10. New memory devices based on the proton transfer process

    NASA Astrophysics Data System (ADS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  11. Measurement-device-independent entanglement-based quantum key distribution

    NASA Astrophysics Data System (ADS)

    Yang, Xiuqing; Wei, Kejin; Ma, Haiqiang; Sun, Shihai; Liu, Hongwei; Yin, Zhenqiang; Li, Zuohan; Lian, Shibin; Du, Yungang; Wu, Lingan

    2016-05-01

    We present a quantum key distribution protocol in a model in which the legitimate users gather statistics as in the measurement-device-independent entanglement witness to certify the sources and the measurement devices. We show that the task of measurement-device-independent quantum communication can be accomplished based on monogamy of entanglement, and it is fairly loss tolerate including source and detector flaws. We derive a tight bound for collective attacks on the Holevo information between the authorized parties and the eavesdropper. Then with this bound, the final secret key rate with the source flaws can be obtained. The results show that long-distance quantum cryptography over 144 km can be made secure using only standard threshold detectors.

  12. A triple quantum dot based nano-electromechanical memory device

    NASA Astrophysics Data System (ADS)

    Pozner, R.; Lifshitz, E.; Peskin, U.

    2015-09-01

    Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, "ON" and "OFF" states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

  13. Small Dosimeter based on Timepix device for International Space Station

    NASA Astrophysics Data System (ADS)

    Turecek, D.; Pinsky, L.; Jakubek, J.; Vykydal, Z.; Stoffle, N.; Pospisil, S.

    2011-12-01

    The radiation environment in space is different, more complex and more intense than on Earth. Conventional devices and detection methods used nowadays do not allow to discriminate single particle types and the energy of the single particles. The Timepix detector is a position sensitive pixelated detector developed at CERN in a frame of the Medipix collaboration that provides capability to visualize tracks and measure energy of single particles. This information can be used for sorting the particles into different categories. It is possible to distinguish light charged particles such as electrons or heavy charged particles such as ions. Moreover, the Linear Energy Transfer (LET) for charged particles can be determined. Each category is assigned a quality factor corresponding to the energy a particle would deposit in the human tissue. By summing the dose of all particles an estimate of the dose rate can be calculated. For space dosimetry purposes a miniature device with the Timepix detector and a custom made integrated USB based readout interface has been constructed. The entire device has dimensions of a USB flash memory stick. The whole compact device is connected to a control PC and is operated continuously. The PC runs a software that controls data acquisition, adjusts the acquisition time adaptively according to the particle rate, analyzes the particle tracks, evaluates the deposited energy and the LET and visualizes in a simple display the estimated dose rate. The performance of the device will be tested during a mission on International Space Station planned towards the beginning of year 2012.

  14. Biological fabrication of nanostructured silicon-germanium photonic crystals possessing unique photoluminescent and electroluminescent properties

    NASA Astrophysics Data System (ADS)

    Rorrer, Gregory L.; Jeffryes, Clayton; Chang, Chih-hung; Lee, Doo-Hyoung; Gutu, Timothy; Jiao, Jun; Solanki, Raj

    2007-09-01

    Diatoms are single-celled algae which possess silica shells called "frustules" that contain periodic submicron scale features. A diatom cell culture process was used to fabricate a two-dimensional photonic crystal slab of Ge-doped biosilica that possessed 120 nm holes, 330 nm lattice constant, and dielectric constant of 8.5. This material was integrated into an electroluminescent (EL) device by spin coating of the frustules onto indium tin oxide, followed by atomic layer deposition of 400 nm hafnium silicate. No photonic band gap was predicted. However, the EL spectrum possessed resonant UV line emissions that were consistent with photonic band calculations. An EL band gap between 500-640 nm was also observed between blue and red EL line emissions. These EL characteristics have not been observed previously, and are unique to the diatom photonic crystal. This study represents a first step towards the realization of optoelectronic devices which utilize nanoscale components fabricated through cell culture.

  15. Transient electroluminescence dynamics in small molecular organic light-emitting diodes

    SciTech Connect

    Gan, Z; Liu, R; Shinar, R; Shinar, J

    2010-09-14

    Intriguing electroluminescence (EL) spikes, following a voltage pulse applied to small molecular OLEDs, are discussed, elucidating carrier and exciton quenching dynamics and their relation to device structure. At low temperatures, all devices exhibit spikes at {approx} 70-300 ns and {mu}s-long tails. At 295 K only those with a hole injection barrier, carrier-trapping guest-host emitting layer, and no strong hole-blocking layer exhibit the spikes. They narrow and appear earlier under post-pulse reverse bias. The spikes and tails are in agreement with a revised model of recombination of correlated charge pairs (CCPs) and initially unpaired charges. Decreased post-pulse field-induced dissociative quenching of singlet excitons and CCPs, and possibly increased post-pulse current of holes that 'turn back' toward the recombination zone after having drifted beyond it are suspected to cause the spikes amplitude, which exceeds the dc EL.

  16. Optical sensor array platform based on polymer electronic devices

    NASA Astrophysics Data System (ADS)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  17. Integrated fuses for OLED lighting device

    DOEpatents

    Pschenitzka, Florian

    2007-07-10

    An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

  18. Learning in and from brain-based devices.

    PubMed

    Edelman, Gerald M

    2007-11-16

    Biologically based mobile devices have been constructed that differ from robots based on artificial intelligence. These brain-based devices (BBDs) contain simulated brains that autonomously categorize signals from the environment without a priori instruction. Two such BBDs, Darwin VII and Darwin X, are described here. Darwin VII recognizes objects and links categories to behavior through instrumental conditioning. Darwin X puts together the "what,"when," and "where" from cues in the environment into an episodic memory that allows it to find a desired target. Although these BBDs are designed to provide insights into how the brain works, their principles may find uses in building hybrid machines. These machines would combine the learning ability of BBDs with explicitly programmed control systems. PMID:18006739

  19. Light programmable organic transistor memory device based on hybrid dielectric

    NASA Astrophysics Data System (ADS)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  20. Stability of spintronic devices based on quantum ring networks

    NASA Astrophysics Data System (ADS)

    Földi, Péter; Kálmán, Orsolya; Peeters, F. M.

    2009-09-01

    Transport properties in mesoscopic networks are investigated, where the strength of the (Rashba-type) spin-orbit coupling is tuned with external gate voltages. We analyze in detail to what extent the ideal behavior and functionality of some promising network-based devices are modified by random (spin-dependent) scattering events and by thermal fluctuations. It is found that although the functionality of these devices is obviously based on the quantum coherence of the transmitted electrons, there is a certain stability: moderate level of errors can be tolerated. For mesoscopic networks made of typical semiconductor materials, we found that when the energy distribution of the input carriers is narrow enough, the devices can operate close to their ideal limits even at relatively high temperature. As an example, we present results for two different networks: one that realizes a Stern-Gerlach device and another that simulates a spin quantum walker. Finally we propose a simple network that can act as a narrow band energy filter even in the presence of random scatterers.

  1. Solution-processable phosphorescent to organic light-emitting diodes based on chromophoric amphiphile/silica nanocomposite

    NASA Astrophysics Data System (ADS)

    Yang, Chung-He; Yang, Sheng-Hsiung; Hsu, Chain-Shu

    2009-08-01

    We report the synthesis of a tris-cyclometalated iridium complex which emits sky-blue light and its potential use in phosphorescent light-emitting devices. The hybrid meso-structured nanocomposites by sol-gel co-assembly with tetraethyl ortho-silicate and corresponding molecular interactions within mesopores were also demonstrated. Electroluminescent devices were fabricated using carbazole-based monomers and iridium complex as the active layer, acting as a host/guest system through a co-assembled sol-gel process. Devices based on this nanocomposite showed improved luminescent efficiencies several times higher than that of similar chromophores elaborated in the literature. A triple-layer electroluminescence device with the configuration of ITO/PEDOT/ Ir(F2OC11ppy)3:CA-C11:PBD nanocomposite/TPBI/Ca/Al showed a maximum brightness of 1389 cd m-2 at 12 V and a maximum efficiency of 3.29 cd A-1.

  2. Charge-carrier injection via semiconducting electrodes into semiconducting/electroluminescent polymers

    NASA Astrophysics Data System (ADS)

    Wünsch, F.; Chazalviel, J.-N.; Ozanam, F.; Sigaud, P.; Stéphan, O.

    2001-08-01

    The indium-tin-oxide (ITO) electrode commonly used for hole injection in organic electroluminescent devices is replaced by a crystalline p-type Si electrode in order to improve the injection efficiency. Several conducting/electroluminescent polymers such as poly(9-vinylcarbazole), poly(9,9-dihexylfluorene) and polyhexylcarbazole are deposited via spin-coating onto the Si electrode, and an Al contact is evaporated on top. Current-voltage characteristics indicate that hole injection into these polymers is easier from p-Si than from ITO or Au. Surface effects hinder an even better performance, expected from naive energetics considerations. This major role of the surface is demonstrated by comparing the average photoconductivity decay time at the Si/polymer-interface with that at an Si surface, using spatially resolved microwave reflection. Also, various surface treatments such as hydrogenation, oxidation and methylation are applied to the Si substrate before polymer deposition. The results highlight the key role of the interface state density at the semiconductor/polymer interface, and the need for a surface state density as low as possible in order to minimise the operating voltage.

  3. With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

    NASA Astrophysics Data System (ADS)

    Baeumler, Martina; Dammann, Michael; Wespel, Matthias; George, Roshna; Konstanzer, Helmer; Maroldt, Stephan; Polyakov, Vladimir M.; Müller, Stefan; Bronner, Wolfgang; Brückner, Peter; Benkhelifa, Fouad; Waltereit, Patrick; Quay, Rüdiger; Mikulla, Michael; Wagner, Joachim; Ambacher, Oliver; Graff, Andreas; Altmann, Frank; Simon-Najasek, Michél.; Lorenzini, Martino; Fagerlind, Martin; van der Wel, Paul J.; Roedle, Thomas

    2015-08-01

    Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is related to the kinetic energy and density of the channel electrons accelerated in the electric field, both local current and electric field changes can result in an increase or decrease of the EL intensity. The electric field distribution in source drain direction peaks at the drain side edge of the gate foot and the field plates. It is strongly dependent on the gate design and the passivation /semiconductor interface trap density. Although the spatial resolution of the electroluminescence microscopy (ELM) set-up is limited to a few microns, the technique allows to monitor submicron changes in the device geometry and hence to identify elevated electric field peaks being responsible for the acceleration of the degradation process. ELM also benefits from the fact that submicron imperfections at the Schottky interface of the gate electrode result in strong local current variations. It has been used to selectively identify suitable positions for further failure analysis of focused ion beam prepared cross sections by scanning and transmission electron microscopy. Process induced imperfections as voids at the Schottky interface after stress have been localized.

  4. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    PubMed Central

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  5. Computational insights into the photophysical and electroluminescence properties of homoleptic fac-Ir(C^N)3 complexes employing different phenyl-derivative-featuring phenylimidazole-based ligands for promising phosphors in OLEDs.

    PubMed

    Li, Jieqiong; Wang, Li; Sun, Kenan; Zhang, Jinglai

    2016-02-21

    The electronic structures and photophysical properties of three homoleptic iridium(iii) complexes IrL3 with C^N ligands, including 2a (L = 1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole), 5a (L = 1-(2,6-dimethylphenyl)-2-phenyl-1H-imidazole), and 6a (L = 1-(3,5-diisopropylbiphenyl-4-yl)-2-phenyl-1H-imidazole), are investigated by means of the density functional method. Furthermore, seven new complexes are theoretically designed, including 1a (L = 1,2-diphenyl-1H-imidazole), 3a (L = 1-(2,6-dimethoxyphenyl)-2-phenyl-1H-imidazol), 4a (L = 2-(2-phenyl-1H-imidazol-1-yl)isophthalaldehyde), 1b (L = 2-(biphenyl-3-yl)-1H-imidazole), 2b (L = 2-(2',6'-diisopropylbiphenyl-3-yl)-1H-imidazole), 3b (L = 2-(2',6'-dimethoxybiphenyl-3-yl)-1H-imidazole), and 4b (L = 3'-(1H-imidazol-2-yl)biphenyl-2,6-dicarbaldehyde), to explore the influence of different substituents and different substituted positions on the electronic structures, phosphorescence properties, and organic light-emitting diode (OLED) performance. The HOMO-LUMO energy gap is greatly decreased by introduction of the -CHO group into the phenyl ring (4a and 4b see -sketched structures for all the investigated Ir(iii) complexes). As a result, their absorption and emission spectra present red-shifting leading them to be potential red-emitting phosphors. Other complexes are all blue-emitting materials, indicating that the effect of the substituted position on the emitting color is negligible. However, the addition of the substituent on the para-position of the phenyl ring in the phenylimidazole ligand would increase the quantum yield and electroluminescence (EL) performance compared with that on the imidazole ring. PMID:26763190

  6. Encapsulation methods for organic electrical devices

    DOEpatents

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  7. The use of silk-based devices for fracture fixation

    NASA Astrophysics Data System (ADS)

    Perrone, Gabriel S.; Leisk, Gary G.; Lo, Tim J.; Moreau, Jodie E.; Haas, Dylan S.; Papenburg, Bernke J.; Golden, Ethan B.; Partlow, Benjamin P.; Fox, Sharon E.; Ibrahim, Ahmed M. S.; Lin, Samuel J.; Kaplan, David L.

    2014-03-01

    Metallic fixation systems are currently the gold standard for fracture fixation but have problems including stress shielding, palpability and temperature sensitivity. Recently, resorbable systems have gained interest because they avoid removal and may improve bone remodelling due to the lack of stress shielding. However, their use is limited to paediatric craniofacial procedures mainly due to the laborious implantation requirements. Here we prepare and characterize a new family of resorbable screws prepared from silk fibroin for craniofacial fracture repair. In vivo assessment in rat femurs shows the screws to be self-tapping, remain fixed in the bone for 4 and 8 weeks, exhibit biocompatibility and promote bone remodelling. The silk-based devices compare favourably with current poly-lactic-co-glycolic acid fixation systems, however, silk-based devices offer numerous advantages including ease of implantation, conformal fit to the repair site, sterilization by autoclaving and minimal inflammatory response.

  8. Active terahertz device based on optically controlled organometal halide perovskite

    NASA Astrophysics Data System (ADS)

    Zhang, Bo; Lv, Longfeng; He, Ting; Chen, Tianji; Zang, Mengdi; Zhong, Liang; Wang, Xinke; Shen, Jingling; Hou, Yanbing

    2015-08-01

    An active all-optical high-efficiency broadband terahertz device based on an organometal halide perovskite (CH3NH3PbI3, MAPbI3)/inorganic (Si) structure is investigated. Spectrally broadband modulation of the THz transmission is obtained in the frequency range from 0.2 to 2.6 THz, and a modulation depth of nearly 100% can be achieved with a low-level photoexcitation power (˜0.4 W/cm2). Both THz transmission and reflection were suppressed in the MAPbI3/Si structure by an external continuous-wave (CW) laser. Enhancement of the charge carrier density at the MAPbI3/Si interface is crucial for photo-induced absorption. The results show that the proposed high-efficiency broadband optically controlled terahertz device based on the MAPbI3/Si structure has been realized.

  9. Novel device-based interventional strategies for advanced heart failure.

    PubMed

    Toth, Gabor G; Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  10. Novel device-based interventional strategies for advanced heart failure

    PubMed Central

    Vanderheyden, Marc; Bartunek, Jozef

    2016-01-01

    While heart failure is one of the leading causes of mortality and morbidity, our tools to provide ultimate treatment solutions are still limited. Recent developments in new devices are designed to fill this therapeutic gap. The scope of this review is to focus on two particular targets, namely (1) left ventricular geometric restoration and (2) atrial depressurization. (1) Reduction of the wall stress by shrinking the ventricular cavity has been traditionally attempted surgically. Recently, the Parachute device (CardioKinetix Inc., Menlo Park, CA, USA) has been introduced to restore ventricular geometry and cardiac mechanics. The intervention aims to partition distal dysfunctional segments that are non-contributory to the ventricular mechanics and forward cardiac output. (2) Diastolic heart failure is characterized by abnormal relaxation and chamber stiffness. The main therapeutic goal achieved should be the reduction of afterload and diastolic pressure load. Recently, new catheter-based approaches were proposed to reduce left atrial pressure and ventricular decompression: the InterAtrial Shunt Device (IASD™) (Corvia Medical Inc., Tewksbury, MA, USA) and the V-Wave Shunt (V-Wave Ltd, Or Akiva, Israel). Both are designed to create a controlled atrial septal defect in symptomatic patients with heart failure. While the assist devices are aimed at end-stage heart failure, emerging device-based percutaneous or minimal invasive techniques comprise a wide spectrum of innovative concepts that target ventricular remodeling, cardiac contractility or neuro-humoral modulation. The clinical adoption is in the early stages of the initial feasibility and safety studies, and clinical evidence needs to be gathered in appropriately designed clinical trials. PMID:26966444

  11. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    SciTech Connect

    Prokof'eva, M. M.; Dorokhin, M. V.; Danilov, Yu. A.; Kudrin, A. V.; Vikhrova, O. V.

    2010-11-15

    Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

  12. Polarization effects in nitride and ferroelectric based devices

    NASA Astrophysics Data System (ADS)

    Singh, Madhusudan

    This dissertation addresses the application of theoretical and computational methods to examine heterostructure devices based on planar semiconductors. The thesis pursues III-V nitrides and ferroelectrics like LiNbO3 and BaxSr1-xTiO 3. GaN and other nitrides exhibit a large polarization charge arising from the built in polarization revealed in the [1000] growth direction, and are also wide band-gap materials (with the exception of InN). The nitrides are important for high-power/high-temperature electronics and for short wavelength light emitters. Our studies address important issues in large bandgap junctions, transistors and light emitters. One of the salient results of our studies has been the first calculations of tunnel current in polar junctions and the potential of using built in polar charge at interface to design junctions. We find that novel junctions cam be designed to produce tailorable I-V characteristics. Our studies have led to experimental realization of such tailorable junctions. We also present results on charge control in ferroelectric-nitride structures where post growth junction tailoring can be carried out (using poling) to create functional devices. This leads to a new class of devices such as switches. We have developed extensive charge control, Monte Carlo based transport models and device simulation techniques to examine nitride based transistors. These studies allow us to examine mobility, transit time, high frequency behavior, noise, transconductance, etc. We have examined device non-linearity issues, scaling issues, temperature dependence, noise sources, and device design optimization issues. Our results are closely coupled to experimental results. Role of unusual velocity-field relations, self-heating and non-equilibrium phonons is examined. III-V nitride based light emitters often exhibit a very high radiative efficiency, higher than the presence of dislocations in the system suggests. Calculations indicate however, that local disorder

  13. Spectral Imaging for Electroluminescence Characterization of a Polymer-Blend Light-Emitting Diode

    NASA Astrophysics Data System (ADS)

    Takada, Noriyuki; Kamata, Toshihide

    2005-12-01

    Spectral imaging for electroluminescence (EL) characterization of a light-emitting diode based on blends of poly[2,7-(9,9-di-n-octylfluorene)] (PFO) and poly[2,7-(9,9-di-n-octylfluorene)-\\textit{alt}-(1,4-phenylene-((4-\\textit{sec}-butylphenyl)amino)-1,4-phenylene)] (TFB) was performed using a two-dimensional microspectroscopy imaging system. We found that EL spectral images changed markedly with increasing applied voltage. Such a variation is presumed to have originated from the transfer of emission sites in the polymer blend layer.

  14. Detecting luminescence from triplet states of organic semiconductors at room temperatures using delayed electroluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Wang, Qi; Aziz, Hany

    2014-08-01

    We demonstrate a unique approach for detecting luminescence from triplet states of organic materials in the solid state at room temperatures. The technique is based on measuring delayed electroluminescence from the material. The approach overcomes limitations of conventional spectroscopic techniques, such as the need for cooling to cryogenic temperatures, and works for a wide range of organic materials. The underlying mechanisms behind observing materials phosphorescence using this technique are studied. The results show that using a low concentration of the target material doped in a host material and a large energy differences between triplet states of target and host materials are necessary for obtaining efficient phosphorescence at room temperatures.

  15. Simulation of devices based on carbon nanotubes and graphene

    NASA Astrophysics Data System (ADS)

    Abramov, I. I.; Labunov, V. A.; Kolomejtseva, N. V.; Romanova, I. A.

    2014-12-01

    The simulation results of different devices based on carbon nanotubes (CNT) and graphene are described in the paper. The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on CNT of different types (chirality) was realized with the use of the developed model. The technique of express simulation of nanoradio based on CNT of the type I (based on only single CNT) and of the type II (hybrid radio) is developed. Proposed models can be used for calculation of nanoradio characteristics such as: 1) resonant frequency of CNT; 2) oscillation amplitude of CNT; 3) CNT IV-characteristics depending on different factors. Results of device simulation based on single-wall and multi-wall CNT are given in the paper. IV-characteristics of nanoscale resonant tunneling structure based on graphene-on-SiC were calculated. As well as it was investigated the influence of different parameters on the electrical characteristic of graphene-based nanostructures.

  16. Paper-based diagnostic devices for clinical paraquat poisoning diagnosis.

    PubMed

    Kuan, Chen-Meng; Lin, Szu-Ting; Yen, Tzung-Hai; Wang, Yu-Lin; Cheng, Chao-Min

    2016-05-01

    This article unveils the development of a paper-based analytical device designed to rapidly detect and clinically diagnose paraquat (PQ) poisoning. Using wax printing technology, we fabricated a PQ detection device by pattering hydrophobic boundaries on paper. This PQ detection device employs a colorimetric sodium dithionite assay or an ascorbic acid assay to indicate the PQ level in a buffer system or in a human serum system in 10 min. In this test, colorimetric changes, blue in color, were observable with the naked eye. By curve fitting models of sodium dithionite and ascorbic acid assays in normal human serum, we evaluated serum PQ levels for five PQ-poisoned patients before hemoperfusion (HP) treatment and one PQ-poisoned patient after HP treatment. As evidenced by similar detection outcomes, the analytical performance of our device can compete with that of the highest clinical standard, i.e., spectrophotometry, with less complicated sample preparation and with more rapid results. Accordingly, we believe that our rapid PQ detection can benefit physicians determining timely treatment strategies for PQ-poisoned patients once they are taken to hospitals, and that this approach will increase survival rates. PMID:27462379

  17. Smart goggles based on all-plastic electrochromic devices

    NASA Astrophysics Data System (ADS)

    Ma, Chao; Xu, Chunye

    2009-07-01

    A novel smart goggle with tunable light transmittance was designed, fabricated and characterized in this research. The developed smart goggle lens was all-plastic based electrochromic (EC) device. The working EC material was a layer of thin film conducting polymer: poly (3,4-(2,2-dimethylpropylenedioxy)thiophene) (PProDOT-Me2), while the counter material of the device was a layer of thin film inorganic oxide: vanadium oxide-titanium oxide (V2O5-TiO2) composite, which serves as an ion storage layer. A transparent electrolyte as the ion transport layer was sandwiched between the working and counter parts of the device. The whole device was sealed with an UV cured flexible film sealant. The smart goggle exhibited tunable light transmittance in visible light wavelength (380-800nm), with a maximum contrast ratio at 580nm. Meanwhile, other unique properties include fast switching speed, low driving voltage, memory function (no power needed after switching, bi-stable), great durability, high flexibility, light weight, and inexpensiveness.

  18. Microcontact printing-based fabrication of digital microfluidic devices.

    PubMed

    Watson, Michael W L; Abdelgawad, Mohamed; Ye, George; Yonson, Neal; Trottier, Justin; Wheeler, Aaron R

    2006-11-15

    Digital microfluidics is a fluid manipulation technique in which discrete droplets are actuated on patterned arrays of electrodes. Although there is great enthusiasm for the application of this technique to chemical and biological assays, development has been hindered by the requirement of clean room fabrication facilities. Here, we present a new fabrication scheme, relying on microcontact printing (microCP), an inexpensive technique that does not require clean room facilities. In microCP, an elastomeric poly(dimethylsiloxane) stamp is used to deposit patterns of self-assembled monolayers onto a substrate. We report three different microCP-based fabrication techniques: (1) selective etching of gold-on-glass substrates; (2) direct printing of a suspension of palladium colloids; and (3) indirect trapping of gold colloids from suspension. In method 1, etched gold electrodes are used for droplet actuation; in methods 2 and 3, colloid patterns are used to seed electroless deposition of copper. We demonstrate, for the first time, that digital microfluidic devices can be formed by microCP and are capable of the full range of digital microfluidics operations: dispensing, merging, motion, and splitting. Devices formed by the most robust of the new techniques were comparable in performance to devices formed by conventional methods, at a fraction of the fabrication time. These new techniques for digital microfluidics device fabrication have the potential to facilitate expansion of this technology to any research group, even those without access to conventional microfabrication tools and facilities. PMID:17105183

  19. An UV photochromic memory effect in proton-based WO{sub 3} electrochromic devices

    SciTech Connect

    Zhang Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-17

    We report an UV photochromic memory effect on a standard proton-based WO{sub 3} electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  20. UV Photochromic Memory Effect in Proton-Based WO3 Electrochromic Devices

    SciTech Connect

    Zhang, Y.; Lee, S. H.; Mascarenhas, A.; Deb, S. K.

    2008-12-01

    We report an UV photochromic memory effect on a standard proton-based WO{sub 3} electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  1. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-01

    We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  2. Electrochemiluminescence detection in microfluidic cloth-based analytical devices.

    PubMed

    Guan, Wenrong; Liu, Min; Zhang, Chunsun

    2016-01-15

    This work describes the first approach at combining microfluidic cloth-based analytical devices (μCADs) with electrochemiluminescence (ECL) detection. Wax screen-printing is employed to make cloth-based microfluidic chambers which are patterned with carbon screen-printed electrodes (SPEs) to create truly disposable, simple, inexpensive sensors which can be read with a low-cost, portable charge coupled device (CCD) imaging sensing system. And, the two most commonly used ECL systems of tris(2,2'-bipyridyl)ruthenium(II)/tri-n-propylamine (Ru(bpy)3(2+)/TPA) and 3-aminophthalhydrazide/hydrogen peroxide (luminol/H2O2) are applied to demonstrate the quantitative ability of the ECL μCADs. In this study, the proposed devices have successfully fulfilled the determination of TPA with a linear range from 2.5 to 2500μM with a detection limit of 1.265μM. In addition, the detection of H2O2 can be performed in the linear range of 0.05-2.0mM, with a detection limit of 0.027mM. It has been shown that the ECL emission on the wax-patterned cloth device has an acceptable sensitivity, stability and reproducibility. Finally, the applicability of cloth-based ECL is demonstrated for determination of glucose in phosphate buffer solution (PBS) and artificial urine (AU) samples, with the detection limits of 0.032mM and 0.038mM, respectively. It can be foreseen, therefore, that μCADs with ECL detection could provide a new sensing platform for point-of-care testing, public health, food safety detection and environmental monitoring in remote regions, developing or developed countries. PMID:26319168

  3. A cloud-based multimodality case file for mobile devices.

    PubMed

    Balkman, Jason D; Loehfelm, Thomas W

    2014-01-01

    Recent improvements in Web and mobile technology, along with the widespread use of handheld devices in radiology education, provide unique opportunities for creating scalable, universally accessible, portable image-rich radiology case files. A cloud database and a Web-based application for radiologic images were developed to create a mobile case file with reasonable usability, download performance, and image quality for teaching purposes. A total of 75 radiology cases related to breast, thoracic, gastrointestinal, musculoskeletal, and neuroimaging subspecialties were included in the database. Breast imaging cases are the focus of this article, as they best demonstrate handheld display capabilities across a wide variety of modalities. This case subset also illustrates methods for adapting radiologic content to cloud platforms and mobile devices. Readers will gain practical knowledge about storage and retrieval of cloud-based imaging data, an awareness of techniques used to adapt scrollable and high-resolution imaging content for the Web, and an appreciation for optimizing images for handheld devices. The evaluation of this software demonstrates the feasibility of adapting images from most imaging modalities to mobile devices, even in cases of full-field digital mammograms, where high resolution is required to represent subtle pathologic features. The cloud platform allows cases to be added and modified in real time by using only a standard Web browser with no application-specific software. Challenges remain in developing efficient ways to generate, modify, and upload radiologic and supplementary teaching content to this cloud-based platform. Online supplemental material is available for this article. PMID:24819664

  4. Table-top mirror based parallel programmable optical logic device

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Tanay

    2014-12-01

    Light rays can easily be reflected to different path by mechanical movement of mirrors. Using this basic operational principle we can design parallel programmable optical logic device (PPOLD) by arranging mirrors on a table. The ‘table-top mirror' models of this proposed circuit have been shown here. We can program it to design all the two input 16-Boolean logical expressions from a single design. The design is based on only plane mirrors. No active optical material is used in this design. Not only that the proposed circuit is optically reversible in nature. Moreover this design is very simple in sense. It can be fabricated in MEMS based optical switches.

  5. Enhanced electroluminescence properties of doped ZnS nanorods formed by the self-assembly of colloidal nanocrystals

    NASA Astrophysics Data System (ADS)

    Manzoor, K.; Aditya, V.; Vadera, S. R.; Kumar, N.; Kutty, T. R. N.

    2005-07-01

    Aggregation based meso-scale self-assembly of doped semiconductor nanocrystals leading to the formation of monocrystalline nanorods showing enhanced photo- and electro-luminescence properties is reported. ˜4 nm sized, polycrystalline ZnS nanoparticles of zinc-blende (cubic) structure, doped with Cu +-Al 3+ have been aggregated in the aqueous solution and grown into nanorods of length ˜400 nm and aspect ratio ˜12. Transmission electron microscopic (TEM) images indicate crystal growth mechanisms involving particle-to-particle oriented-attachment assisted by sulphur-sulphur catenation leading to covalent-linkage. The nanorods exhibit self-assembly dependant luminescence properties such as quenching of the lattice defect-related emissions accompanied by the enhancement in the dopant-related emission, efficient low-voltage electroluminescence (EL) and super-linear voltage-brightness EL characteristics. This study demonstrates the technological importance of aggregation based self-assembly in doped semiconductor nanosystems.

  6. Enhanced photocoagulation with catheter-based diffusing optical device

    NASA Astrophysics Data System (ADS)

    Kang, Hyun Wook; Kim, Jeehyun; Oh, Jungwhan

    2012-11-01

    A novel balloon catheter-based diffusing optical device was designed and evaluated to assist in treating excessive menstrual bleeding. A synthetic fused-silica fiber was micro-machined precisely to create scattering segments on a 25 mm long fiber tip for uniform light distribution. A visible wavelength (λ=532 nm) was used to specifically target the endometrium due to the high vascularity of the uterine wall. Optical simulation presented 30% wider distribution of photons along with approximately 40% higher irradiance induced by addition of a glass cap to the diffuser tip. Incorporation of the optical diffuser with a polyurethane balloon catheter considerably enhanced coagulation depth and area (i.e., 3.5 mm and 18.9 cm2 at 1 min irradiation) in tissue in vitro. The prototype device demonstrated the coagulation necrosis of 2.8±1.2 mm (n=18) and no thermal damage to myometrium in in vivo caprine models. A prototype 5 cm long balloon catheter-assisted optical diffuser was also evaluated with a cadaveric human uterus to confirm the coagulative response of the uterine tissue as well as to identify the further design improvement and clinical applicability. The proposed catheter-based diffusing optical device can be a feasible therapeutic tool to photocoagulate endometrial cell layers in an efficient and safe manner.

  7. Analysis of Android Device-Based Solutions for Fall Detection

    PubMed Central

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  8. Analysis of Android Device-Based Solutions for Fall Detection.

    PubMed

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  9. Laser-based patterning for fluidic devices in nitrocellulose

    PubMed Central

    Katis, Ioannis N.; Eason, Robert W.; Sones, Collin L.

    2015-01-01

    In this report, we demonstrate a simple and low cost method that can be reproducibly used for fabrication of microfluidic devices in nitrocellulose. The fluidic patterns are created via a laser-based direct-write technique that induces polymerisation of a photo-polymer previously impregnated in the nitrocellulose. The resulting structures form hydrophobic barriers that extend through the thickness of the nitrocellulose and define an interconnected hydrophilic fluidic-flow pattern. Our experimental results show that using this method it is possible to achieve microfluidic channels with lateral dimensions of ∼100 μm using hydrophobic barriers that form the channel walls with dimensions of ∼60 μm; both of these values are considerably smaller than those that can be achieved with other current techniques used in the fabrication of nitrocellulose-based fluidic devices. A simple grid patterned nitrocellulose device was then used for the detection of C-reactive protein via a sandwich enzyme-linked immunosorbent assay, which served as a useful proof-of-principle experiment. PMID:26015836

  10. Opto-electronic transport properties of graphene oxide based devices

    SciTech Connect

    Das, Poulomi; Ibrahim, Sk; Pal, Tanusri; Chakraborty, Koushik; Ghosh, Surajit

    2015-06-24

    Large area, solution-processed, graphene oxide (GO)nanocomposite based photo FET has been successfully fabricated. The device exhibits p-type charge transport characteristics in dark condition. Our measurements indicate that the transport characteristics are gate dependent and extremely sensitive to solar light. Photo current decay mechanism of GO is well explained and is associated with two phenomena: a) fast response process and b) slow response process. Slow response photo decay can be considered as the intrinsic phenomena which are present for both GO and reduced GO (r-GO), whereas the first response photo decay is controlled by the surface defect states. Demonstration of photo FET performance of GO thin film is a significant step forward in integrating these devices in various optoelectronic circuits.

  11. Polymer-based waveguide devices for WDM applications

    NASA Astrophysics Data System (ADS)

    Viens, Jean-Francois; Callender, Claire L.; Noad, Julian P.; Eldada, Louay A.; Norwood, Robert A.

    1999-10-01

    This paper summarizes the work currently in progress at CRC Canada on wavelength multiplexing components based on polymer waveguide devices for operation at 1550 nm. Planar arrayed waveguide gratings (AWGs) of various bandwidths were designed, fabricated and tested using acrylate polymer materials developed by Allied Signal Inc. Eight channel polymer demultiplexers fabricated by standard lithography show on-chip losses of 8 dB and a crosstalk of -25 dB between channels spaced 1.6 nm part. Owing to the thermo- optic properties of these polymers, the spectral response of the device scan be tuned by more than 7 nm without changes in optical crosstalk or on-chip loss. Very compact AWGs made with Allied Signal polymers are being designed and tested to address the need for cost effective, high bandwidth optical components in the telecom and datacom industries.

  12. Gold-based electrical interconnections for microelectronic devices

    DOEpatents

    Peterson, Kenneth A.; Garrett, Stephen E.; Reber, Cathleen A.; Watson, Robert D.

    2002-01-01

    A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

  13. Paper-based microfluidic device with upconversion fluorescence assay.

    PubMed

    He, Mengyuan; Liu, Zhihong

    2013-12-17

    A paper-based microfluidic device with upconversion fluorescence assay (named as UC-μPAD) is proposed. The device is fabricated on a normal office printing sheet with a simple plotting method. Upconversion phosphors (UCPs) tagged with specific probes are spotted to the test zones on the μPAD, followed by the introduction of assay targets. Upconversion fluorescence measurements are directly conducted on the test zones after the completion of the probe-to-target reactions, without any post-treatments. The UC-μPAD features very easy fabrication and operation, simple and fast detection, low cost, and high sensitivity. UC-μPAD is a promising prospect for a clinical point-of-care test. PMID:24308347

  14. Microcomputer-based Acceleration Sensor Device for Swimming Stroke Monitoring

    NASA Astrophysics Data System (ADS)

    Ohgi, Yuji; Ichikawa, Hiroshi; Miyaji, Chikara

    The purpose of this study was to develop a microcomputer-based acceleration logger device for the swimming stroke monitoring. The authors measured the swimmer's tri-axial wrist acceleration and applied this device for the fatigue evaluation of the swimmers. The experimental protocol led the swimmers exhausted after the crawl stroke interval training. Every single stroke was determined by the impact acceleration peak, which appeared on the x and z-axis acceleration. The change of the underwater stroke phases was identified by the characteristics of the acceleration peaks. In their exhaustion, the y-axis acceleration, which was longitudinal forearm acceleration decreased at the beginning of the upsweep phase. At that time, the swimmer could not extend his elbow joint. Since the developed acceleration data logger could provide us the information about the underwater stroke phases and it would be a helpful tool in the swimming training.

  15. An electromagnetic inerter-based vibration suppression device

    NASA Astrophysics Data System (ADS)

    Gonzalez-Buelga, A.; Clare, L. R.; Neild, S. A.; Jiang, J. Z.; Inman, D. J.

    2015-05-01

    This paper describes how an inerter-based device for structural vibration suppression can be realized using an electromagnetic transducer such as a linear motor. When the motor shaft moves, a difference of voltage is generated across the transducer coil. The voltage difference is proportional to the relative velocity between its two terminals. The electromagnetic transducer will exert a force proportional to current following the Lorentz principle if the circuit is closed around the transducer coil. If an electronic circuit consisting of a capacitor, an inductance and a resistance with the appropriate configuration is connected, the resulting force reflected back into the mechanical domain is equivalent to that achieved by a mechanical inerter-based device. The proposed configuration is easy to implement and very versatile, provided a high quality conversion system with negligible losses. With the use of electromagnetic devices, a new generation of vibration absorbers can be realized, for example in the electrical domain it would be relatively uncomplicated to synthesize multi-frequency or real time tunable vibration absorbers by adding electrical components in parallel. In addition by using resistance emulators in the electrical circuits, part of the absorbed vibration energy can be converted into usable power. Here an electromagnetic tuned inerter damper (E-TID) is tested experimentally using real time dynamic substructuring. A voltage compensation unit was developed in order to compensate for coil losses. This voltage compensation unit requires power, which is acquired through harvesting from the vibration energy using a resistance emulator. A power balance analysis was developed in order to ensure the device can be self sufficient. Promising experimental results, using this approach, have been obtained and are presented in this paper. The ultimate goal of this research is the development of autonomous electromagnetic vibration absorbers, able to harvest energy

  16. Structural parameters effect on the electrical and electroluminescence properties of silicon nanocrystals/SiO2 superlattices

    NASA Astrophysics Data System (ADS)

    López-Vidrier, J.; Berencén, Y.; Hernández, S.; Mundet, B.; Gutsch, S.; Laube, J.; Hiller, D.; Löper, P.; Schnabel, M.; Janz, S.; Zacharias, M.; Garrido, B.

    2015-05-01

    The effect of the oxide barrier thickness (tSiO2) reduction and the Si excess ([Si]exc) increase on the electrical and electroluminescence (EL) properties of Si-rich oxynitride (SRON)/SiO2 superlattices (SLs) is investigated. The active layers of the metal-oxide-semiconductor devices were fabricated by alternated deposition of SRON and SiO2 layers on top of a Si substrate. The precipitation of the Si excess and thus formation of Si nanocrystals (NCs) within the SRON layers was achieved after an annealing treatment at 1150 °C. A structural characterization revealed a high crystalline quality of the SLs for all devices, and the evaluated NC crystalline size is in agreement with a good deposition and annealing control. We found a dramatic conductivity enhancement when the Si content is increased or the SiO2 barrier thickness is decreased, due to a larger interaction of the carrier wavefunctions from adjacent layers. EL recombination dynamics were studied, revealing radiative recombination decay times of the order of tens of microseconds. Lower lifetimes were found at higher [Si]exc, attributed to exciton confinement delocalization, whereas intermediate barrier thicknesses present the slowest decay. The electrical-to-light conversion efficiency increases monotonously at thicker barriers and smaller Si contents. We ascribe these effects mainly to free carriers, which enhance carrier transport through the SLs while strongly quenching light emission. Finally, the combination of the different results led us to conclude that tSiO2 ˜ 2 nm and [Si]exc from 12 to 15 at% are the ideal structure parameters for a balanced electro-optical response of Si NC-based SLs.

  17. MEMS- and NEMS-based smart devices and systems

    NASA Astrophysics Data System (ADS)

    Varadan, Vijay K.

    2001-11-01

    structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

  18. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    NASA Astrophysics Data System (ADS)

    Tregnago, G.; Fléchon, C.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.; Cacialli, F.

    2014-10-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ˜1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ˜1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  19. Ultraviolet Electroluminescence and Blue-Green Phosphorescence using an Organic Diphosphine Oxide Charge Transporting Layer.

    SciTech Connect

    Burrows, Paul E.; Padmaperuma, Asanga B.; Sapochak, Linda S.; Djurovich, Peter I.; Thompson, Mark E.

    2006-05-01

    We report electroluminescence with a peak wavelength at 338 nm from a simple bilayer organic light emitting device (OLED) made using 4,4’-bis(diphenylphosphine oxide) biphenyl (PO1). In an OLED geometry, the material is preferentially electron transporting. Doping the PO1 layer with iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N, C2’)picolinate (FIrpic) gives rise to electrophosphorescence with a peak external quantum efficiency of 7.8% at 0.09 mA/cm2 and 5.8% at 13 mA/cm2. The latter current density is obtained at 6.3 V applied forward bias. This represents a new class of wide-bandgap charge transporting organic materials which may prove useful as host materials for blue electrophosphoresent OLEDs.

  20. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    SciTech Connect

    Tregnago, G.; Fléchon, C.; Cacialli, F. E-mail: f.cacialli@ucl.ac.uk; Choudhary, S.; Gozalvez, C.

    2014-10-06

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  1. Electroluminescence from individual air-suspended carbon nanotubes within split-gate structures

    NASA Astrophysics Data System (ADS)

    Higashide, N.; Uda, T.; Yoshida, M.; Ishii, A.; Kato, Y. K.

    Electrically induced light emission from chirality-identified single-walled carbon nanotubes are investigated by utilizing split-gate field-effect devices fabricated on silicon-on-insulator substrates. We begin by etching trenches through the top silicon layer into the buried oxide, and the silicon layer is thermally oxidized for use as local gates. We partially remove the oxide and form gate electrodes, then contacts for nanotubes are deposited on both sides of the trench. Catalyst particles are placed on the contacts, and nanotubes are grown over the trench by chemical vapor deposition. We use photoluminescence microscopy to locate the nanotubes and perform excitation spectroscopy to identify their chirality. Gate-induced photoluminescence quenching is used to confirm carrier doping, and electroluminescence intensity is investigated as a function of the split-gate and bias voltages. Work supported by JSPS (KAKENHI 24340066, 26610080), MEXT (Photon Frontier Network Program, Nanotechnology Platform), Canon Foundation, and Asahi Glass Foundation.

  2. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    SciTech Connect

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D.

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  3. Conjugated polymer electrochromic and light-emitting devices

    NASA Astrophysics Data System (ADS)

    Dyer, Aubrey L.

    Conjugated conducting polymers are among some of the most versatile materials to emerge in the past 20 years. They have been researched for applications that range from photovoltaics, to light-emitting diodes, electrochromic windows, actuators, and field effect transistors. This work details the analytical characterization of pi-conjugated polymers to understand their redox and optical properties, along with the development of several new types of devices that employ these polymers as the active materials for both variable optical attenuators and as dual electrochromic/electroluminescent displays. Within this work, a phenomenon that we term unsymmetrical switching has been uncovered for the first time in reflective electrochromic cells. The unsymmetrical switching in these displays is explored and a model devised to illustrate that the presence of a conductive front propagating through the polymer film on electrochemical oxidation is the contributing cause for this observation. For these experiments, a variety of analytical techniques have been utilized to characterize the devices and materials contained therein and include electrochemistry, spectroelectrochemistry, and photometry. The first application utilizes the large near infrared electrochromic contrasts of some dioxythiophene-based polymers when incorporated in reflective electrochromic displays. For the first time, it is demonstrated that these devices can be utilized as electrochromic variable optical attenuators, important components for the optical telecommunications industry, exhibiting optical attenuation values of 12 decibels while maintaining optical loss values, in the off state, as low as 0.1 decibels. These devices offer the benefit of yielding mechanically flexible, miniaturized electrochromic variable optical attenuators that operate with a low drive voltage (+/-1.2 volts). A new concept is also introduced for conjugated conducting polymers as the active material in dual electrochromic/electroluminescent

  4. Photopolymer-based three-dimensional optical waveguide devices

    NASA Astrophysics Data System (ADS)

    Kagami, M.; Yamashita, T.; Yonemura, M.; Kawasaki, A.; Watanabe, O.; Tomiki, M.

    2012-02-01

    Photopolymer based three-dimensional (3D) waveguide devices are very attractive in low-cost optical system integration. Especially, Light-Induced Self-Written (LISW) technology is suitable for this application, and the technology enables low-loss 3D optical circuitry formation from an optical fiber tip which soaked in photopolymer solution by employing its photo-polymerization due to own irradiation from the fiber tip. This technology is expected drastic mounting cost reduction in fields of micro-optic and hybrid integration devices assembly. The principle of the LISW optical waveguides is self-trapping effect of the irradiation flux into the self-organized waveguide, where, used wavelength can be chosen to fit photopolymer's reactivity from visible to infrared. Furthermore, this effect also makes possible grating formation and "optical solder" interconnection. Actually fabricated self-written grating shows well defined deep periodic index contrast and excellent optical property for the wavelength selectivity. And the "optical solder" interconnection realizes a passive optical interconnection between two faceted fibers or devices by the LISW waveguide even if there is a certain amount of gap and a small degree of misalignment exist. The LISW waveguides grow towards each other from both sides to a central point where the opposing beams overlap and are then combined into one waveguide. This distinctive effect is confirmed in all kind optical fibers, such as from a singlemode to 1-mm-corediameter multimode optical fiber. For example of complicated WDM optical transceiver module, mounted a branchedwaveguide and filter elements, effectiveness of LISW technology is outstanding. In assembling and packaging process, neither dicing nor polishing is needed. In this paper, we introduce LISW technology principles and potential application to integrated WDM optical transceiver devices for both of singlemode and multimode system developed in our research group.

  5. Three-Dimensional Printing Based Hybrid Manufacturing of Microfluidic Devices

    PubMed Central

    Shen, Richang; Gurkan, Umut A.

    2016-01-01

    Microfluidic platforms offer revolutionary and practical solutions to challenging problems in biology and medicine. Even though traditional micro/nanofabrication technologies expedited the emergence of the microfluidics field, recent advances in advanced additive manufacturing hold significant potential for single-step, stand-alone microfluidic device fabrication. One such technology, which holds a significant promise for next generation microsystem fabrication is three-dimensional (3D) printing. Presently, building 3D printed stand-alone microfluidic devices with fully embedded microchannels for applications in biology and medicine has the following challenges: (i) limitations in achievable design complexity, (ii) need for a wider variety of transparent materials, (iii) limited z-resolution, (iv) absence of extremely smooth surface finish, and (v) limitations in precision fabrication of hollow and void sections with extremely high surface area to volume ratio. We developed a new way to fabricate stand-alone microfluidic devices with integrated manifolds and embedded microchannels by utilizing a 3D printing and laser micromachined lamination based hybrid manufacturing approach. In this new fabrication method, we exploit the minimized fabrication steps enabled by 3D printing, and reduced assembly complexities facilitated by laser micromachined lamination method. The new hybrid fabrication method enables key features for advanced microfluidic system architecture: (i) increased design complexity in 3D, (ii) improved control over microflow behavior in all three directions and in multiple layers, (iii) transverse multilayer flow and precisely integrated flow distribution, and (iv) enhanced transparency for high resolution imaging and analysis. Hybrid manufacturing approaches hold great potential in advancing microfluidic device fabrication in terms of standardization, fast production, and user-independent manufacturing.

  6. Electroluminescence from Spontaneously Generated Single-Vesicle Aggregates Using Solution-Processed Small Organic Molecules.

    PubMed

    Tsai, Yu-Tang; Tseng, Kuo-Pi; Chen, Yan-Fang; Wu, Chung-Chih; Fan, Gang-Lun; Wong, Ken-Tsung; Wantz, Guillaume; Hirsch, Lionel; Raffy, Guillaume; Del Guerzo, Andre; Bassani, Dario M

    2016-01-26

    Self-assembled aggregates offer great potential for tuning the morphology of organic semiconductors, thereby controlling their size and shape. This is particularly interesting for applications in electroluminescent (EL) devices, but there has been, to date, no reports of a functional EL device in which the size and color of the emissive domains could be controlled using self-assembly. We now report a series of molecules that spontaneously self-organize into small EL domains of sub-micrometer dimensions. By tailoring the emissive chromophores in solution, spherical aggregates that have an average size of 300 nm in diameter and emit any one color, including CIE D65 white, are spontaneously formed in solution. We show that the individual aggregates can be used in EL devices built either using small patterned electrodes or using a sandwich architecture to produce devices emitting in the blue, green, red, and white. Furthermore, sequential deposition of the three primary colors yields an RGB device in which single aggregates of each color are present in close proximity. PMID:26730851

  7. Microchip-based Devices for Molecular Diagnosis of Genetic Diseases.

    PubMed

    Cheng; Fortina; Surrey; Kricka; Wilding

    1996-09-01

    Microchips, constructed with a variety of microfabrication technologies (photolithography, micropatterning, microjet printing, light-directed chemical synthesis, laser stereochemical etching, and microcontact printing) are being applied to molecular biology. The new microchip-based analytical devices promise to solve the analytical problems faced by many molecular biologists (eg, contamination, low throughput, and high cost). They may revolutionize molecular biology and its application in clinical medicine, forensic science, and environmental monitoring. A typical biochemical analysis involves three main steps: (1) sample preparation, (2) biochemical reaction, and (3) detection (either separation or hybridization may be involved) accompanied by data acquisition and interpretation. The construction of a miniturized analyzer will therefore necessarily entail the miniaturization and integration of all three of these processes. The literature related to the miniaturization of these three processes indicates that the greatest emphasis so far is on the investigation and development of methods for the detection of nucleic acid, followed by the optimization of a biochemical reaction, such as the polymerase chain reaction. The first step involving sample preparation has received little attention. In this review the state of the art of, microchip-based, miniaturized analytical processes (eg, sample preparation, biochemical reaction, and detection of products) are outlined and the applications of microchip-based devices in the molecular diagnosis of genetic diseases are discussed. PMID:10462559

  8. TOPICAL REVIEW: Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    NASA Astrophysics Data System (ADS)

    Willander, M.; Nur, O.; Zhao, Q. X.; Yang, L. L.; Lorenz, M.; Cao, B. Q.; Zúñiga Pérez, J.; Czekalla, C.; Zimmermann, G.; Grundmann, M.; Bakin, A.; Behrends, A.; Al-Suleiman, M.; El-Shaer, A.; Che Mofor, A.; Postels, B.; Waag, A.; Boukos, N.; Travlos, A.; Kwack, H. S.; Guinard, J.; LeSi Dang, D.

    2009-08-01

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  9. Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Rebohle, L.; Braun, M.; Wutzler, R.; Liu, B.; Sun, J. M.; Helm, M.; Skorupa, W.

    2014-06-01

    We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15% of SiO2-Tb2O3-mixed layers fabricated by atomic layer deposition and partly co-doped with Al2O3. The electrical, EL, and breakdown behavior is investigated as a function of the Tb and the Al concentration. Special attention has been paid to the beneficial role of Al2O3 co-doping which improves important device parameters. In detail, it increases the maximum EL power efficiency and EL decay time, it nearly doubles the fraction of excitable Tb3+ ions, it shifts the region of high EL power efficiencies to higher injection currents, and it reduces the EL quenching over the device lifetime by an approximate factor of two. It is assumed that the presence of Al2O3 interferes the formation of Tb clusters and related defects. Therefore, the system SiO2-Tb2O3-Al2O3 represents a promising alternative for integrated, Si-based light emitters.

  10. Liquid crystal devices based on photoalignment and photopatterning materials

    NASA Astrophysics Data System (ADS)

    Chigrinov, Vladimir

    2014-02-01

    Liquid crystal (LC) display and photonics devices based on photo-alignment and photo-patterning LC cells are developed. A fast switchable grating based on ferroelectric liquid crystals and orthogonal planar alignment by means of photo alignments. Both 1D and 2D gratings have been constructed. The proposed diffracting element provides fast response time of around 20 μs, contrast of 7000:1 and high diffraction efficiency, at the electric field of 6V/μm. A switchable LC Fresnel zone lens was also developed with the efficiency of ~42% that can be further improved, and the switching time for the 3 μm thick cell is ~6.7 ms which is relatively fast in comparison of existing devices. Thus, because of the photoalignment technology the fabrication of Fresnel lens became considerably simpler than others. A thin high spatial resolution, photo-patterned micropolarizer array for complementary metal-oxide-semiconductor (CMOS) image sensors was implemented for the complete optical visualization of so called "invisible" objects, which are completely transparent (reflective) and colorless. Four Stokes parameters, which fully characterized the reflected light beam can be simultaneously detected using the array of photo-patterned polarizers on CMOS sensor plate. The cheap, high resolution photo-patterned LC matrix sensor was developed to be able successfully compete with the expensive and low reliable wire grid polarizer patterned arrays currently used for the purpose.

  11. Nanoscale devices based on plasmonic coaxial waveguide resonators

    NASA Astrophysics Data System (ADS)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  12. High Efficiency Alternating Current Driven Organic Light Emitting Devices Employing Active Semiconducting Gate Layers

    NASA Astrophysics Data System (ADS)

    Smith, Gregory; Xu, Junwei; Carroll, David

    2015-03-01

    In this work, we describe the role of semiconductor-polymer interfaces in alternating current (AC) driven organic electroluminescent (EL) devices. We implement inorganic semiconducting materials between the external contact and the active layers in organic light EL devices. Precise control of capacitance and charge injection is required to realize bright and efficient large area AC driven devices. We show how this architecture results in active gating to the polymer layers, resulting in the novel ability to control the capacitance and charge injection characteristics. We propose a model based on band bending at the semiconductor-polymer interface. Furthermore, we elucidate the influence of the semiconductor-polymer interface on the internally coupled magnetic field generated in an alternating current driven organic light emitting device configuration. Magnetic fields can alter the ratios of singlet and triplet populations, and we show that internal generation of a magnetic field can dramatically alter the efficiency of light emission in organic EL devices.

  13. Modeling electroluminescence in insulating polymers under ac stress: effect of excitation waveform

    NASA Astrophysics Data System (ADS)

    Baudoin, F.; Mills, D. H.; Lewin, P. L.; Le Roy, S.; Teyssedre, G.; Laurent, C.

    2011-04-01

    A charge transport model allowing the description of electroluminescence in polyethylene films under ac stress is proposed. The fluid model incorporates bipolar charge injection/extraction, transport and recombination. The physics is based on hopping mobility of electronic carriers between traps with an exponential distribution in which trap filling controls the mobility. The computation mesh is very tight close to the electrodes, of the order of 0.4 nm, allowing mapping of the density of positive and negative carriers during sinusoidal, triangular and square 50 Hz voltage waveforms. Experiment and simulation fit nicely and the time dependence of the electroluminescence intensity is accounted for by the charge behaviour. Light emission scales with the injection current. It is shown that space charge affects a layer 10 nm away from the electrode where the mobility is increased as compared with the bulk mobility due to the high density of charge. The approach is very encouraging and opens the way to model space charge under time-varying voltages.

  14. A new release device based on styrene-based SMP reinforced by carbon fiber

    NASA Astrophysics Data System (ADS)

    Wei, Hanqing; Guan, Chunyang; Du, Haiyang; Liu, Liwu; Leng, Jinsong

    2013-08-01

    Shape memory polymer composites (SMPC) release device can be fabricated to solve the disadvantages of traditional explosive release device, such as large weight, bad stability, and strong impact force and damage due to explosion. The release device is made up of two thin-walled tubes, the first one is responsible for the torsion, and the second is used to fit the first tube. The tubes are made from carbon fiber reinforced styrene-based shape memory polymer (SMP). Resistor heater is applied to heat the device and actuate the shape recovery process. This SMPC release device can connect the main device and the device which need released. When the instruction comes, it can separate the two devices immediately. Firstly, the first tube is heated by the resistor heater, then the twisting and stretching force is exited on the heating part of the tube, unloading after cooling, the two thin-walled tubes of release device is connected. Secondly, the twisted part of the first tube is heated, it twisted to the original angle, and then the stretched part drew back to the original shape after heating. So the working part pulled the claws of it out of the second tube automatically, and separated the release device to two parts, thus the release is completed. Optimal solutions are designed to achieve high driving efficiency. This paper has evaluated the strength and verified the feasibility of the SMPC release device, measured the tensile strength and the reverse effect, compared with the theoretical and experimental results. Finite element analysis is used to simulate the deformation.

  15. Detection of base-pair mismatches in DNA using graphene-based nanopore device

    NASA Astrophysics Data System (ADS)

    Kundu, Sourav; Karmakar, S. N.

    2016-04-01

    We present a unique way to detect base-pair mismatches in DNA, leading to a different epigenetic disorder by the method of nanopore sequencing. Based on a tight-binding formulation of a graphene-based nanopore device, using the Green’s function approach we study the changes in the electronic transport properties of the device as we translocate a double-stranded DNA through the nanopore embedded in a zigzag graphene nanoribbon. In the present work we are not only successful in detecting the usual AT and GC pairs but also a set of possible mismatches in the complementary base pairing.

  16. Photonic integrated circuits based on novel glass waveguides and devices

    NASA Astrophysics Data System (ADS)

    Zhang, Yaping; Zhang, Deng; Pan, Weijian; Rowe, Helen; Benson, Trevor; Loni, Armando; Sewell, Phillip; Furniss, David; Seddon, Angela B.

    2006-04-01

    Novel materials, micro-, nano-scale photonic devices, and 'photonic systems on a chip' have become important focuses for global photonics research and development. This interest is driven by the rapidly growing demand for broader bandwidth in optical communication networks, and higher connection density in the interconnection area, as well as a wider range of application areas in, for example, health care, environment monitoring and security. Taken together, chalcogenide, heavy metal fluoride and fluorotellurite glasses offer transmission from ultraviolet to mid-infrared, high optical non-linearity and the ability to include active dopants, offering the potential for developing optical components with a wide range of functionality. Moreover, using single-mode large cross-section glass-based waveguides as an optical integration platform is an elegant solution for the monolithic integration of optical components, in which the glass-based structures act both as waveguides and as an optical bench for integration. We have previously developed a array of techniques for making photonic integrated circuits and devices based on novel glasses. One is fibre-on-glass (FOG), in which the fibres can be doped with different active dopants and pressed onto a glass substrate with a different composition using low-temperature thermal bonding under mechanical compression. Another is hot-embossing, in which a silicon mould is placed on top of a glass sample, and hot-embossing is carried out by applying heat and pressure. In this paper the development of a fabrication technique that combines the FOG and hot-embossing procedures to good advantage is described. Simulation and experimental results are presented.

  17. Device-independent quantum key distribution based on measurement inputs

    NASA Astrophysics Data System (ADS)

    Rahaman, Ramij; Parker, Matthew G.; Mironowicz, Piotr; Pawłowski, Marcin

    2015-12-01

    We provide an analysis of a family of device-independent quantum key distribution (QKD) protocols that has the following features. (a) The bits used for the secret key do not come from the results of the measurements on an entangled state but from the choices of settings. (b) Instead of a single security parameter (a violation of some Bell inequality) a set of them is used to estimate the level of trust in the secrecy of the key. The main advantage of these protocols is a smaller vulnerability to imperfect random number generators made possible by feature (a). We prove the security and the robustness of such protocols. We show that using our method it is possible to construct a QKD protocol which retains its security even if the source of randomness used by communicating parties is strongly biased. As a proof of principle, an explicit example of a protocol based on the Hardy's paradox is presented. Moreover, in the noiseless case, the protocol is secure in a natural way against any type of memory attack, and thus allows one to reuse the device in subsequent rounds. We also analyze the robustness of the protocol using semidefinite programming methods. Finally, we present a postprocessing method, and observe a paradoxical property that rejecting some random part of the private data can increase the key rate of the protocol.

  18. White electrophosphorescent devices based on tricolour emissive layers

    NASA Astrophysics Data System (ADS)

    Wang, Yu; Hua, Yulin; Wu, Xiaoming; Zhang, Guohui; Hui, Juanli; Zhang, Lijuan; Liu, Qian; Ma, Liang; Yin, Shougen; Petty, M. C.

    2008-01-01

    We demonstrate high efficiency, white organic light-emitting devices based on a structure using multiple emissive layers and fabricated without a hole-injecting layer. 2,5,8,11-tetra-tertbutylperylene (TBPe) was used as the blue fluorescent layer and the overall device configuration was indium tin oxide (ITO)/N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/4,4'-N, N'-dicarbazole-biphenyl (CBP): bis[1-(phenyl)isoquinoline] iridium (III) acetylanetonate [Ir(piq)2(acac)]/CBP:fac-tris(2-phenylpyridine) iridium [Ir(ppy)3]/CBP: TBPe/2, 9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/(8-hydroxyquinoline) aluminium (Alq3)/LiF/Al. This structure possessed a maximum luminous efficiency of 14.2 cd A-1 at a current density of 4 mA cm-2 and a maximum brightness of 40 520 cd m-2 at 25 V. The Commission Internationale de L'Eclairage coordinates changed only from (0.27, 0.38) to (0.33, 0.38), with the brightness varying from 100 to 25 640 cd m-2, as the applied voltage was increased from 10 to 23 V.

  19. SENNA: device for explosives' detection based on nanosecond neutron analysis

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Andrey; Evsenin, Alexey; Osetrov, Oleg; Vakhtin, Dmitry; Gorshkov, Igor

    2006-05-01

    Portable device for explosives' detection (SENNA) based on Nanosecond Neutron Analysis (NNA) / Associated Particles Technique (APT) has been created and tested. SENNA is a single suitcase weighting 35 kg; it is remotely controlled from any PC-compatible computer. Inside is an APT neutron generator with a 3×3 matrix of semiconductor detectors of associated alpha-particles, two BGO-based detectors of gamma-rays, fully-digital data acquisition electronics, data analysis and decision-making software, and batteries. Detection technology is based on determining chemical composition of the concealed substance by analyzing secondary gamma-rays from interaction of tagged fast neutrons with its material. A combination of position-sensitive alpha-detector and time-of-flight analysis allows one to determine the location of the detected material within the inspected volume and its approximate mass. Fully digital data acquisition electronics is capable of performing alpha-gamma coincidence analysis at very high counting rates, which leads to reduction of the detection time down to dozens of seconds. SENNA's scenario-driven automatic decisionmaking algorithm based of "fuzzy logic" mechanism allows one to detect not only standard military or industrial explosives, but also improvised explosives (including those containing no nitrogen), even if their chemical composition differs from that of standard explosives. SENNA can also be "trained" to detect other hazardous materials, such as chemical/toxic materials, if their chemical composition is in any way different from that of the surrounding materials.

  20. Carrier recombination spatial transfer by reduced potential barrier causes blue/red switchable luminescence in C8 carbon quantum dots/organic hybrid light-emitting devices

    NASA Astrophysics Data System (ADS)

    Chen, Xifang; Yan, Ruolin; Zhang, Wenxia; Fan, Jiyang

    2016-04-01

    The underlying mechanism behind the blue/red color-switchable luminescence in the C8 carbon quantum dots (CQDs)/organic hybrid light-emitting devices (LEDs) is investigated. The study shows that the increasing bias alters the energy-level spatial distribution and reduces the carrier potential barrier at the CQDs/organic layer interface, resulting in transition of the carrier transport mechanism from quantum tunneling to direct injection. This causes spatial shift of carrier recombination from the organic layer to the CQDs layer with resultant transition of electroluminescence from blue to red. By contrast, the pure CQDs-based LED exhibits green-red electroluminescence stemming from recombination of injected carriers in the CQDs.

  1. Nanoscale strain engineering of graphene and graphene-based devices

    NASA Astrophysics Data System (ADS)

    Yeh, N.-C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D. A.; Chen, C.-C.

    2016-02-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

  2. Fabrication and Operation of Paper-Based Analytical Devices

    NASA Astrophysics Data System (ADS)

    Jiang, Xiao; Fan, Z. Hugh

    2016-06-01

    This review focuses on the fabrication techniques and operational components of microfluidic paper-based analytical devices (μPADs). Being low-cost, user-friendly, fast, and simple, μPADs have seen explosive growth in the literature in the last decade. Many different materials and technologies have been employed to fabricate μPADs for various applications, including those that employ patterning, the creation of physical boundaries, and three-dimensional structures. In addition to fabrication techniques, flow control and other operational components in μPADs are of great interest. These components enable μPADs to control flow rates, direct flow paths via valves, sequentially deliver reagents automatically, and display test results, all of which will make μPADs more suitable for point-of-care applications.

  3. Fabrication and Operation of Paper-Based Analytical Devices.

    PubMed

    Jiang, Xiao; Fan, Z Hugh

    2016-06-12

    This review focuses on the fabrication techniques and operational components of microfluidic paper-based analytical devices (μPADs). Being low-cost, user-friendly, fast, and simple, μPADs have seen explosive growth in the literature in the last decade. Many different materials and technologies have been employed to fabricate μPADs for various applications, including those that employ patterning, the creation of physical boundaries, and three-dimensional structures. In addition to fabrication techniques, flow control and other operational components in μPADs are of great interest. These components enable μPADs to control flow rates, direct flow paths via valves, sequentially deliver reagents automatically, and display test results, all of which will make μPADs more suitable for point-of-care applications. PMID:27070184

  4. Nanoscale strain engineering of graphene and graphene-based devices

    NASA Astrophysics Data System (ADS)

    Yeh, N.-C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D. A.; Chen, C.-C.

    2016-06-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

  5. Very High Output Thermoelectric Devices Based on ITO Nanocomposites

    NASA Technical Reports Server (NTRS)

    Fralick, Gustave; Gregory, Otto J.

    2009-01-01

    A material having useful thermoelectric properties was synthesized by combining indium-tin-oxide (ITO) with a NiCoCrAlY alloy/alumina cermet. This material had a very large Seebeck coefficient with electromotive-force-versustemperature behavior that is considered to be excellent with respect to utility in thermocouples and other thermoelectric devices. When deposited in thin-film form, ceramic thermocouples offer advantages over precious-metal (based, variously, on platinum or rhodium) thermocouples that are typically used in gas turbines. Ceramic thermocouples exhibit high melting temperatures, chemical stability at high temperatures, and little or no electromigration. Oxide ceramics also resist oxidation better than metal thermocouples, cost substantially less than precious-metal thermocouples, and, unlike precious-metal thermocouples, do not exert catalytic effects.

  6. Random laser action from flexible biocellulose-based device

    NASA Astrophysics Data System (ADS)

    dos Santos, Molíria V.; Dominguez, Christian T.; Schiavon, João V.; Barud, Hernane S.; de Melo, Luciana S. A.; Ribeiro, Sidney J. L.; Gomes, Anderson S. L.; de Araújo, Cid B.

    2014-02-01

    We demonstrate random lasing action in flexible bacterial cellulose (BC) membrane containing a laser-dye and either dielectric or metallic nanoparticles (NPs). The novel random laser system consists of BC nanofibers attached with Rhodamine 6G molecules and having incorporated either silica or silver NPs. The laser action was obtained by excitation of the samples with a 6 ns pulsed laser at 532 nm. Minimum laser threshold of ≈0.7 mJ/pulse was measured for the samples with silica NPs, whereas a laser threshold of 2.5 mJ/pulse for a system based on silver NPs was obtained. In both cases a linewidth narrowing from ≈50 to ≈4 nm was observed. Potential applications in biophotonics and life sciences are discussed for this proof-of-concept device.

  7. Molecular-based electronically switchable tunnel junction devices.

    PubMed

    Collier, C P; Jeppesen, J O; Luo, Y; Perkins, J; Wong, E W; Heath, J R; Stoddart, J F

    2001-12-19

    Solid-state tunnel junction devices were fabricated from Langmuir Blodgett molecular monolayers of a bistable [2]catenane, a bistable [2]pseudorotaxane, and a single-station [2]rotaxane. All devices exhibited a (noncapacitive) hysteretic current-voltage response that switched the device between high- and low-conductivity states, although control devices exhibited no such response. Correlations between the structure and solution-phase dynamics of the molecular and supramolecular systems, the crystallographic domain structure of the monolayer film, and the room-temperature device performance characteristics are reported. PMID:11741428

  8. Origami paper-based fluidic batteries for portable electrophoretic devices.

    PubMed

    Chen, Sung-Sheng; Hu, Chih-Wei; Yu, I-Fan; Liao, Ying-Chih; Yang, Jing-Tang

    2014-06-21

    A manufacturing approach for paper-based fluidic batteries was developed based on the origami principle (three-dimension paper folding). Microfluidic channels were first created on a filter paper by a wax-printing method. Copper and aluminium sheets were then glued onto the paper as electrodes for the redox reaction. After the addition of copper sulphate and aluminium chloride, commonly available cellophane paper was attached as a membrane to separate the two electrodes. The resulting planar paper sheets were then folded into three-dimensional structures and compiled as a single battery with glue. The two half reactions (Al/Al(3+) and Cu/Cu(2+)) in the folded batteries provided an open-circuit potential from 0.82 V (one cell) to 5.0 V (eight cells in series) depending on the origami design. The prepared battery can provide a stable current of 500 μA and can light a regular LED for more than 65 min. These paper-based fluidic batteries in a set can also be compiled into a portable power bank to provide electric power for many electric or biomedical applications, such as LED lights and electrophoretic devices, as we report here. PMID:24811036

  9. Swarm Optimization-Based Magnetometer Calibration for Personal Handheld Devices

    PubMed Central

    Ali, Abdelrahman; Siddharth, Siddharth; Syed, Zainab; El-Sheimy, Naser

    2012-01-01

    Inertial Navigation Systems (INS) consist of accelerometers, gyroscopes and a processor that generates position and orientation solutions by integrating the specific forces and rotation rates. In addition to the accelerometers and gyroscopes, magnetometers can be used to derive the user heading based on Earth's magnetic field. Unfortunately, the measurements of the magnetic field obtained with low cost sensors are usually corrupted by several errors, including manufacturing defects and external electro-magnetic fields. Consequently, proper calibration of the magnetometer is required to achieve high accuracy heading measurements. In this paper, a Particle Swarm Optimization (PSO)-based calibration algorithm is presented to estimate the values of the bias and scale factor of low cost magnetometers. The main advantage of this technique is the use of the artificial intelligence which does not need any error modeling or awareness of the nonlinearity. Furthermore, the proposed algorithm can help in the development of Pedestrian Navigation Devices (PNDs) when combined with inertial sensors and GPS/Wi-Fi for indoor navigation and Location Based Services (LBS) applications.

  10. Language-based color editing for mobile device

    NASA Astrophysics Data System (ADS)

    Zhao, Yonghui; Bala, Raja; Braun, Karen M.; Langford, Zahra; Rolleston, Robert J.; Stevens, Michael T.

    2011-03-01

    Natural language color (NLC) was initially developed as a web-based application and then deployed in one Xerox print driver. NLC changes the image-editing paradigm from the use of curves, sliders, and knobs, to the use of verbal text-based commands such as "make light green much less yellowish". The technology appeals to a common user who has no expert knowledge in color science, and this naturally leads one to think about its use in mobile devices. A prototype GUI design for a language-based color editing on iPhone platform will be presented that uses several of its haptic interfaces (e.g. "slot-machine", shaking, swiping, etc.). A textual interface is provided to select a color to be modified within the image and a direction of change for the modification. A swipe interface is provided to select a magnitude and polarity for the modification. Actions on the textual and swipe interface are converted to natural language commands that are in turn used to derive a color transformation that is applied to relevant portions of the image to yield a modified image. The modifications are displayed in real time to the user.

  11. Graphene-Based Integrated Photovoltaic Energy Harvesting/Storage Device.

    PubMed

    Chien, Chih-Tao; Hiralal, Pritesh; Wang, Di-Yan; Huang, I-Sheng; Chen, Chia-Chun; Chen, Chun-Wei; Amaratunga, Gehan A J

    2015-06-24

    Energy scavenging has become a fundamental part of ubiquitous sensor networks. Of all the scavenging technologies, solar has the highest power density available. However, the energy source is erratic. Integrating energy conversion and storage devices is a viable route to obtain self-powered electronic systems which have long-term maintenance-free operation. In this work, we demonstrate an integrated-power-sheet, consisting of a string of series connected organic photovoltaic cells (OPCs) and graphene supercapacitors on a single substrate, using graphene as a common platform. This results in lighter and more flexible power packs. Graphene is used in different forms and qualities for different functions. Chemical vapor deposition grown high quality graphene is used as a transparent conductor, while solution exfoliated graphene pastes are used as supercapacitor electrodes. Solution-based coating techniques are used to deposit the separate components onto a single substrate, making the process compatible with roll-to-roll manufacture. Eight series connected OPCs based on poly(3-hexylthiophene)(P3HT):phenyl-C61-butyric acid methyl ester (PC60 BM) bulk-heterojunction cells with aluminum electrodes, resulting in a ≈5 V open-circuit voltage, provide the energy harvesting capability. Supercapacitors based on graphene ink with ≈2.5 mF cm(-2) capacitance provide the energy storage capability. The integrated-power-sheet with photovoltaic (PV) energy harvesting and storage functions had a mass of 0.35 g plus the substrate. PMID:25703342

  12. Thickness-dependent white electroluminescence from diamond/CeF3/SiO2 multilayered films

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoping; Liu, Ping; Wang, Lijun; Li, Jian

    2014-03-01

    Diamond/CeF3/SiO2 multilayered films electroluminescent (EL) devices were made, and we found that the EL spectrum at room temperature depends on the CeF3 layer thickness. The EL spectrum shows that the main peaks are located at 527 nm, 593 nm, and 742 nm when the CeF3 layer thickness is less than 0.5 μm, but when the CeF3 layer thickness is greater than 0.5 μm, the electroluminescence spectrum obviously exhibits three bands, which are centered at 310-380 nm (ultraviolet emission), 520-580 nm (green-yellow emission), and 700-735 nm (red emission). The white EL brightness of the device (for thicker CeF3 layer) reaches a maximum of 15 cd/m2 at a forward applied voltage of 225 V, which can be distinguished at the sunlight in the light by the naked eye.

  13. Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films

    SciTech Connect

    Kim, Joo Han; Holloway, Paul H.

    2004-09-06

    Strong near-infrared (NIR) electroluminescence (EL) at room temperature from neodymium (Nd)-doped gallium nitride (GaN) thin films is reported. The Nd-doped GaN films were grown by radio-frequency planar magnetron cosputtering of separate GaN and metallic Nd targets in a pure nitrogen ambient. X-ray diffraction data did not identify the presence of any secondary phases and revealed that the Nd-doped GaN films had a highly textured wurtzite crystal structure with the c-axis normal to the surface of the film. The EL devices were fabricated with a thin-film multilayered structure of Al/Nd-doped GaN/Al{sub 2}O{sub 3}-TiO{sub 2}/indium-tin oxide and tested at room temperate. Three distinct NIR EL emission peaks were observed from the devices at 905, 1082, and 1364 nm, arising from the radiative relaxation of the {sup 4}F{sub 3sol2} excited-state energy level to the {sup 4}I{sub 9sol2}, {sup 4}I{sub 11sol2}, and {sup 4}I{sub 13sol2} levels of the Nd{sup 3+} ion, respectively. The threshold voltage for all the three emission peaks was {approx}150 V. The external power efficiency of the fabricated EL devices was {approx}1x10{sup -5} measured at 40 V above the threshold voltage.

  14. Atom devices based on single dopants in silicon nanostructures

    PubMed Central

    2011-01-01

    Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics. PMID:21801408

  15. Mg2(Si,Sn)-based thermoelectric materials and devices

    NASA Astrophysics Data System (ADS)

    Gao, Peng

    Thermoelectric effects are phenomena found in materials that can achieve direct conversion between heat flow and electricity. One important application of thermoelectric effects is thermoelectric generators, which can generate electricity when a temperature gradient is applied. Thermoelectric generators make use of various sources of heat and it is considered a promising solution for waste heat recovery. The conversion efficiency of thermoelectric generators depends on the materials used in the devices. Significant improvement in the performance of thermoelectric materials has been made in the past few decades. However, most of the good thermoelectric materials being investigated have limitations, such as the high materials cost, high materials density and toxicity of the constituent elements. The Mg2(Si,Sn)-based materials studied in this work are promising candidates for thermoelectric generators in the mid-temperature range and have drawn increasing research interest in recent years because these materials are high performance thermoelectrics that are low cost, low-density and non-toxic. In this work, systematic studies were performed on the Mg2(Si,Sn) thermoelectric materials. Thermal phase stability was studied for different compositions of Mg2Si1-xSnx and Mg2Si0.4Sn 0.6 was used as base material for further optimization. Both n-type and p-type samples were obtained by doping the materials with different elements. Peak ZT ˜ 1.5 for the n-type and ZT ˜ 0.7 for the p-type materials were obtained, both of which are among the best reported results so far. Experimental work was also done to study the techniques to develop the Mg2Si 0.4Sn0.6 materials into working devices. Different electrode materials were tested in bonding experiment for this compound, and copper was found to be the best electrode material for Mg2Si 0.4Sn0.6. Preliminary work was done to demonstrate the possibility of fabricating a Mg2Si0.4Sn0.6-based thermoelectric generator and the result is

  16. Chalcogenide based materials and devices for flexible electronics applications

    NASA Astrophysics Data System (ADS)

    Salas-Villasenor, Ana Lizeth

    The scaling of large-area electronics for applications in flat-panel displays, digital X-ray images, and flexible electronics is pushing the technological and cost limits of conventional materials and device processing. Chemical bath deposited chalcogenide films are attractive for thin film transistors (TFTs) for large area electronics given its simple fabrication, low temperature and compatibility with most substrates. In this dissertation, we describe the development of a high performance chalcogenide based TFTs using chemical bath deposition (CBD) methods. Cadmium sulfide (CdS) and lead sulfide (PbS) are used as the TFT channel layer. The influence of several CBD parameters is studied. CBD pH and CdS film thickness have a profound influence on the TFT electrical characteristics. These parameters impact film cluster size and impurity concentration. With the optimized CdS deposition conditions TFTs with excellent electrical properties are demonstrated. With a novel photolithography approach demonstrated here, TFTs with mobilities as high as 18 cm2 /V s, Ion/Ioff of 109 and V T shift of less than 0.1 eV were fabricated. To achieve these TFTs characteristics, a variety of contact materials, gate dielectrics, annealing conditions and device structures were studied. The factors affecting VT instability for CdS based TFTs are also presented and correlated to electrode materials, gate dielectrics, and post-annealing. In summary, TFT instability is correlated to traps and impurities at the dielectric/semiconductor and/or in the semiconductor film. In addition, this dissertation demonstrates CdS TFTs integration in hybrid complementary metal-oxide-semiconductor (CMOS) circuits. In particular, logic gates and ferroelectric random access (FRAM) memory cells are demonstrated. Finally, CdS based TFTs on flexible and transparent substrates with excellent stability and mobility of 10-18 cm2/V-s, threshold voltage of 1.6-4.8 V, and Ion/Ioff ratios of 107 are demonstrated. This

  17. Workplace for manufacturing devices based on optical fiber tapers

    NASA Astrophysics Data System (ADS)

    Martan, Tomáš; Honzátko, Pavel; Kaňka, Jiři; Novotný, Karel

    2007-04-01

    Many important optical fiber components are based on tapered optical fibers. A taper made from a single-mode optical fiber can be used, e.g., as a chemical sensor, bio-chemical sensor, or beam expander. A fused pair of tapers can be used as a fiber directional coupler. Fiber tapers can be fabricated in several simple ways. However, a tapering apparatus is required for more sophisticated fabrication of fiber tapers. The paper deals with fabrication and characterization of fiber tapers made from a single-mode optical fiber. A tapering apparatus was built for producing devices based on fiber tapers. The apparatus is universal and enables one to taper optical fibers of different types by a method utilizing stretching a flame-heated section of a silica fiber. Fiber tapers with constant waist length and different waist diameters were fabricated. The transition region of each fiber taper monotonically decreased in diameter along its length from the untapered fiber to the taper waist. The fiber tapers were fabricated with a constant drawing velocity, while the central zone of the original single-mode fiber was heated along a constant length. The spectral transmissions of the manufactured fiber tapers with different parameters were measured by the cut-back method.

  18. First realization of the piezoelectronic stress-based transduction device.

    PubMed

    Chang, Josephine B; Miyazoe, Hiroyuki; Copel, Matthew; Solomon, Paul M; Liu, Xiao-Hu; Shaw, Thomas M; Schrott, Alejandro G; Gignac, Lynne M; Martyna, Glenn J; Newns, Dennis M

    2015-09-18

    We present the first realization of a monolithically integrated piezoelectronic transistor (PET), a new transduction-based computer switch which could potentially operate conventional computer logic at 1/50 the power requirements of current Si-based transistors (Chen 2014 Proc. IEEE ICICDT pp 1-4; Mamaluy et al 2014 Proc. IWCE pp 1-2). In PET operation, an input gate voltage expands a piezoelectric element (PE), transducing the input into a pressure pulse which compresses a piezoresistive element (PR). The PR resistance goes down, transducing the signal back to voltage and turning the switch 'on'. This transduction physics, in principle, allows fast, low-voltage operation. In this work, we address the processing challenges of integrating chemically incompatible PR and PE materials together within a surrounding cage against which the PR can be compressed. This proof-of-concept demonstration of a fully integrated, stand-alone PET device is a key step in the development path toward a fast, low-power very large scale integration technology. PMID:26302818

  19. Optimal alignment of mirror based pentaprisms for scanning deflectometric devices

    SciTech Connect

    Barber, Samuel K.; Geckeler, Ralf D.; Yashchuk, Valeriy V.; Gubarev, Mikhail V.; Buchheim, Jana; Siewert, Frank; Zeschke, Thomas

    2011-03-04

    In the recent work [Proc. of SPIE 7801, 7801-2/1-12 (2010), Opt. Eng. 50(5) (2011), in press], we have reported on improvement of the Developmental Long Trace Profiler (DLTP), a slope measuring profiler available at the Advanced Light Source Optical Metrology Laboratory, achieved by replacing the bulk pentaprism with a mirror based pentaprism (MBPP). An original experimental procedure for optimal mutual alignment of the MBPP mirrors has been suggested and verified with numerical ray tracing simulations. It has been experimentally shown that the optimally aligned MBPP allows the elimination of systematic errors introduced by inhomogeneity of the optical material and fabrication imperfections of the bulk pentaprism. In the present article, we provide the analytical derivation and verification of easily executed optimal alignment algorithms for two different designs of mirror based pentaprisms. We also provide an analytical description for the mechanism for reduction of the systematic errors introduced by a typical high quality bulk pentaprism. It is also shown that residual misalignments of an MBPP introduce entirely negligible systematic errors in surface slope measurements with scanning deflectometric devices.

  20. Antimony-Based III-V Thermophotovoltaic Materials and Devices

    NASA Astrophysics Data System (ADS)

    Wang, C. A.

    2004-11-01

    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature of around 1100 to 1700 K, since these cells can be spectrally matched to the thermal source. Cells under development include GaSb and lattice-matched GaInAsSb/GaSb and InPAsSb/InAs. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to the quaternary alloys. Cell performance of 0.7-eV GaSb devices is at ˜90% of the practical limit. GaInAsSb cells with energy gap Eg ranging from ˜0.6 to 0.49 eV have been demonstrated with quantum efficiency and fill factor approaching practical limits. InPAsSb cells are the least studied, and a 0.45-eV cell has spectral response out to 4.3 μm. This paper briefly reviews the main efforts in Sb-based TPV cells.

  1. Blue thermally activated delayed fluorescence materials based on bis(phenylsulfonyl)benzene derivatives.

    PubMed

    Liu, Ming; Seino, Yuki; Chen, Dongcheng; Inomata, Susumu; Su, Shi-Jian; Sasabe, Hisahiro; Kido, Junji

    2015-11-25

    Two blue thermally activated delayed fluorescence molecules based on bis(phenylsulfonyl)benzene with very small singlet-triplet splitting energy were designed and synthesized by combining 3,6-di-tert-butylcarbazole with 1,4-bis(phenylsulfonyl)benzene and 1,3-bis(phenylsulfonyl)benzene, and a maximum external quantum efficiency of 11.7% was achieved for an electroluminescent device. PMID:26405720

  2. Dynamic Triboelectrification-Induced Electroluminescence and its Use in Visualized Sensing.

    PubMed

    Wei, Xiao Yan; Wang, Xiandi; Kuang, Shuang Yang; Su, Li; Li, Hua Yang; Wang, Ying; Pan, Caofeng; Wang, Zhong Lin; Zhu, Guang

    2016-08-01

    Triboelectrification-induced electroluminescence converts dynamic motion into light emission. Tribocharges resulting from the relative mechanical interactions between two dissimilar materials can abruptly and significantly alter the surrounding electric potential, exciting the electroluminescence of phosphor along the motion trajectory. The position, trajectory, and contour profile of a moving object can be visualized in high resolution, demonstrating applications in sensing. PMID:27213998

  3. Photonic variable delay devices based on optical birefringence

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor)

    2005-01-01

    Optical variable delay devices for providing variable true time delay to multiple optical beams simultaneously. A ladder-structured variable delay device comprises multiple basic building blocks stacked on top of each other resembling a ladder. Each basic building block has two polarization beamsplitters and a polarization rotator array arranged to form a trihedron; Controlling an array element of the polarization rotator array causes a beam passing through the array element either going up to a basic building block above it or reflect back towards a block below it. The beams going higher on the ladder experience longer optical path delay. An index-switched optical variable delay device comprises of many birefringent crystal segments connected with one another, with a polarization rotator array sandwiched between any two adjacent crystal segments. An array element in the polarization rotator array controls the polarization state of a beam passing through the element, causing the beam experience different refractive indices or path delays in the following crystal segment. By independently control each element in each polarization rotator array, variable optical path delays of each beam can be achieved. Finally, an index-switched variable delay device and a ladder-structured variable device are cascaded to form a new device which combines the advantages of the two individual devices. This programmable optic device has the properties of high packing density, low loss, easy fabrication, and virtually infinite bandwidth. The device is inherently two dimensional and has a packing density exceeding 25 lines/cm2. The delay resolution of the device is on the order of a femtosecond (one micron in space) and the total delay exceeds 10 nanosecond. In addition, the delay is reversible so that the same delay device can be used for both antenna transmitting and receiving.

  4. Encapsulation methods and dielectric layers for organic electrical devices

    DOEpatents

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  5. Electroluminescence and cathodoluminescence from polyethylene and polypropylene films: Spectra reconstruction from elementary components and underlying mechanisms

    NASA Astrophysics Data System (ADS)

    Qiao, B.; Teyssedre, G.; Laurent, C.

    2016-01-01

    The mechanisms of electroluminescence from large band gap polymers used as insulation in electric components are still under debate. It becomes important to unravel the underlying physics of the emission because of increasing thermo-electric stress and a possible relationship between electroluminescence and field withstand. We report herein on the cathodoluminescence spectra of polyethylene and polypropylene films as a way to uncover the nature of its contributions to electroluminescence emission. It is shown that spectra from the two materials are structured around four elementary components, each of them being associated with a specific process contributing to the overall emission with different weights depending on excitation conditions and on materials. The cathodoluminescence and electroluminescence spectra of each material are reconstructed from the four spectral components and their relative contribution are discussed. It is shown that electroluminescence from polyethylene and polypropylene has the same origin pointing towards generic mechanisms in both.

  6. Methods of use for sensor based fluid detection devices

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor)

    2001-01-01

    Methods of use and devices for detecting analyte in fluid. A system for detecting an analyte in a fluid is described comprising a substrate having a sensor comprising a first organic material and a second organic material where the sensor has a response to permeation by an analyte. A detector is operatively associated with the sensor. Further, a fluid delivery appliance is operatively associated with the sensor. The sensor device has information storage and processing equipment, which is operably connected with the device. This device compares a response from the detector with a stored ideal response to detect the presence of analyte. An integrated system for detecting an analyte in a fluid is also described where the sensing device, detector, information storage and processing device, and fluid delivery device are incorporated in a substrate. Methods for use for the above system are also described where the first organic material and a second organic material are sensed and the analyte is detected with a detector operatively associated with the sensor. The method provides for a device, which delivers fluid to the sensor and measures the response of the sensor with the detector. Further, the response is compared to a stored ideal response for the analyte to determine the presence of the analyte. In different embodiments, the fluid measured may be a gaseous fluid, a liquid, or a fluid extracted from a solid. Methods of fluid delivery for each embodiment are accordingly provided.

  7. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    NASA Astrophysics Data System (ADS)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  8. Mechanosynthesis of a phenylenedivinylidenebisquinoline. Optical, morphological and electroluminescence properties

    NASA Astrophysics Data System (ADS)

    Gutiérrez, A. R.; Vázquez, R. A.; Moggio, I.; Arias, E.; Coreño, O.; Maldonado, J. L.; Ramos-Ortíz, G.; Rodríguez, O.; Jiménez-Barrera, R. M.

    2015-04-01

    A phenylenedivinylidenebisquinoline oligomer was obtained by reacting quinaldine with 2,5-bis(octyloxy)terephtalaldehyde via the Knoevenagel reaction by mechanosynthesis. The product was characterized by 1H Homo-J-Resolved NMR, 13C NMR, FT-IR, Fluorescence, UV-Vis spectroscopy and by FAB+ mass spectrometry. X-ray diffraction studies indicate that the molecule is semicrystalline, while laser scanning confocal microscopy shows that the emission comes from the crystals. As a consequence, the morphology and accordingly the PL values in spun films can be changed by varying the spinning conditions. Intrinsic electroluminescent properties are reported using the ITO/M1AMec/Al single layer configuration.

  9. Nanomagnonic devices based on the spin-transfer torque

    NASA Astrophysics Data System (ADS)

    Urazhdin, S.; Demidov, V. E.; Ulrichs, H.; Kendziorczyk, T.; Kuhn, T.; Leuthold, J.; Wilde, G.; Demokritov, S. O.

    2014-07-01

    Magnonics is based on signal transmission and processing by spin waves (or their quanta, called magnons) propagating in a magnetic medium. In the same way as nanoplasmonics makes use of metallic nanostructures to confine and guide optical-frequency plasmon-polaritons, nanomagnonics uses nanoscale magnetic waveguides to control the propagation of spin waves. Recent advances in the physics of nanomagnetism, such as the discovery of spin-transfer torque, have created possibilities for nanomagnonics. In particular, it was recently demonstrated that nanocontact spin-torque devices can radiate spin waves, serving as local nanoscale sources of signals for magnonic applications. However, the integration of spin-torque sources with nanoscale magnetic waveguides, which is necessary for the implementation of integrated spin-torque magnonic circuits, has not been achieved to date. Here, we suggest and experimentally demonstrate a new approach to this integration, utilizing dipolar field-induced magnonic nanowaveguides. The waveguides exhibit good spectral matching with spin-torque nano-oscillators and enable efficient directional transmission of spin waves. Our results provide a practical route for the implementation of integrated magnonic circuits utilizing spin transfer.

  10. Nanomagnonic devices based on the spin-transfer torque.

    PubMed

    Urazhdin, S; Demidov, V E; Ulrichs, H; Kendziorczyk, T; Kuhn, T; Leuthold, J; Wilde, G; Demokritov, S O

    2014-07-01

    Magnonics is based on signal transmission and processing by spin waves (or their quanta, called magnons) propagating in a magnetic medium. In the same way as nanoplasmonics makes use of metallic nanostructures to confine and guide optical-frequency plasmon-polaritons, nanomagnonics uses nanoscale magnetic waveguides to control the propagation of spin waves. Recent advances in the physics of nanomagnetism, such as the discovery of spin-transfer torque, have created possibilities for nanomagnonics. In particular, it was recently demonstrated that nanocontact spin-torque devices can radiate spin waves, serving as local nanoscale sources of signals for magnonic applications. However, the integration of spin-torque sources with nanoscale magnetic waveguides, which is necessary for the implementation of integrated spin-torque magnonic circuits, has not been achieved to date. Here, we suggest and experimentally demonstrate a new approach to this integration, utilizing dipolar field-induced magnonic nanowaveguides. The waveguides exhibit good spectral matching with spin-torque nano-oscillators and enable efficient directional transmission of spin waves. Our results provide a practical route for the implementation of integrated magnonic circuits utilizing spin transfer. PMID:24813697

  11. Screen printed paper-based diagnostic devices with polymeric inks.

    PubMed

    Sun, Ju-Yen; Cheng, Chao-Min; Liao, Ying-Chih

    2015-01-01

    A simple and low-cost fabrication method for paper-based diagnostic devices (PBDDs) is described in this study. Street-available polymer solutions were screen printed onto filter papers to create hydrophobic patterns for fluidic channels. In order to obtain fully functional hydrophobic patterns for fluids, the original polymer solutions were diluted with butyl acetate to yield a suitable viscosity range between 30-200 cP for complete patterning on paper. Typical pH and glucose tests with color indicators were performed on the screen printed PBDDs. Images of the PBDDs were analyzed by computers to obtain calibration curves for pH between 2 and 12 and glucose concentration ranging from 10-1000 mmol dm(-3). Detection of formaldehyde in acetone was also carried out to show the possibility of using this PBBD for analytical detection with organic solvents. An exemplar PBDD with simultaneous pH and glucose detection was also used to demonstrate the feasibility of applying this technique for realistic diagnostic applications. PMID:25765267

  12. Carbon material based microelectromechanical system (MEMS): Fabrication and devices

    NASA Astrophysics Data System (ADS)

    Xu, Wenjun

    This PhD dissertation presents the exploration and development of two carbon materials, carbon nanotubes (CNTs) and carbon fiber (CF), as either key functional components or unconventional substrates for a variety of MEMS applications. Their performance in three different types of MEMS devices, namely, strain/stress sensors, vibration-powered generators and fiber solar cells, were evaluated and the working mechanisms of these two non-traditional materials in these systems were discussed. The work may potentially enable the development of new types of carbon-MEMS devices. Carbon nanotubes were selected from the carbon family due to several advantageous characteristics that this nanomaterial offers. They carry extremely high mechanical strength (Ey=1TPa), superior electrical properties (current density of 4x109 A/cm2), exceptional piezoresistivity (G=2900), and unique spatial format (high aspect ratio hollow nanocylinder), among other properties. If properly utilized, all these merits can give rise to a variety of new types of carbon nanotube based micro- and nanoelectronics that can greatly fulfill the need for the next generation of faster, smaller and better devices. However, before these functions can be fully realized, one substantial issue to cope with is how to implement CNTs into these systems in an effective and controllable fashion. Challenges associated with CNTs integration include very poor dispersibility in solvents, lack of melting/sublimation point, and unfavorable rheology with regard to mixing and processing highly viscous, CNT-loaded polymer solutions. These issues hinder the practical progress of CNTs both in a lab scale and in the industrial level. To this end, a MEMS-assisted electrophoretic deposition technique was developed, aiming to achieve controlled integration of CNT into both conventional and flexible microsystems at room temperature with a relatively high throughput. MEMS technology has demonstrated strong capability in developing

  13. Electron-doping of graphene-based devices by hydrazine

    SciTech Connect

    Feng, Tingting; Xie, Dan; Wang, Dongxia; Wen, Lang; Wu, Mengqiang

    2014-12-14

    A facile and effective technique to tune the electronic properties of graphene is essential to facilitate the flexibility of graphene-based device performances. Here, the use of hydrazine as a solution-processable and effective n-type dopant for graphene is described. By dropping hydrazine solutions at different concentrations on a graphene surface, the Dirac point of graphene can be remarkably tuned. The transport behavior of graphene can be changed from p-type to n-type accordingly, demonstrating the controllable and adjustable doping effect of the hydrazine solutions. Accompanying the Dirac point shift is an enhanced hysteretic behavior of the graphene conductance, indicating an increasing trap state density induced by the hydrazine adsorbates. The electron-doping of graphene by the hydrazine solutions can be additionally confirmed with graphene/p-type silicon heterojunctions. The decrease of the junction current after the hydrazine treatment demonstrates an increase of the junction barrier between graphene and silicon, which is essentially due to the electron-doping of graphene and the resultant upshift of the Fermi level. Finally, partially doped graphene is realized and its electrical property is studied to demonstrate the potential of the hydrazine solutions to selectively electron-doping graphene for future electronic applications.

  14. Microfluidic paper-based analytical device for particulate metals.

    PubMed

    Mentele, Mallory M; Cunningham, Josephine; Koehler, Kirsten; Volckens, John; Henry, Charles S

    2012-05-15

    A microfluidic paper-based analytical device (μPAD) fabricated by wax printing was designed to assess occupational exposure to metal-containing aerosols. This method employs rapid digestion of particulate metals using microliters of acid added directly to a punch taken from an air sampling filter. Punches were then placed on a μPAD, and digested metals were transported to detection reservoirs upon addition of water. These reservoirs contained reagents for colorimetric detection of Fe, Cu, and Ni. Dried buffer components were used to set the optimal pH in each detection reservoir, while precomplexation agents were deposited in the channels between the sample and detection zones to minimize interferences from competing metals. Metal concentrations were quantified from color intensity images using a scanner in conjunction with image processing software. Reproducible, log-linear calibration curves were generated for each metal, with method detection limits ranging from 1.0 to 1.5 μg for each metal (i.e., total mass present on the μPAD). Finally, a standard incineration ash sample was aerosolized, collected on filters, and analyzed for the three metals of interest. Analysis of this collected aerosol sample using a μPAD showed good correlation with known amounts of the metals present in the sample. This technology can provide rapid assessment of particulate metal concentrations at or below current regulatory limits and at dramatically reduced cost. PMID:22489881

  15. Tunable Photonic Devices in Ferroelectric-Based Layered Structures

    NASA Astrophysics Data System (ADS)

    Xin, Jianzhuo

    This thesis presents the studies on the optical properties of perovskite ferroelectric thin films, as well as the preparation and applications of ferroelectrics in tunable photonic devices. Ba(Zr,Ti)O3 (BZT) thin films with different Zr concentration were grown on MgO substrates by pulsed laser deposition, and their structural and optical properties in the visible range were systematically characterized, including the out-of-plane lattice constant, grain size, refractive index, optical band gap energy, electro-optic coefficient, optical loss and absorption coefficient. The obtained results provide information for the design of BZT thin film-based optical devices. One-dimensional photonic crystal filter working in the terahertz (THz) range was studied. The transmission properties of SrTiO3 (STO) crystals were first characterized by THz time-domain spectroscopy. Si/STO multilayers with different STO defect thicknesses were designed by the transfer matrix method and then constructed by polishing and stacking. The shift of defect mode was observed and comparable with the calculations. Two-dimensional photonic structures in the optical and infra-red range were then attempted. A combination of nanoimprint lithography and inductively coupled plasma etching were investigated on (Ba,Sr)TiO3 thin films. Then, in order to simplify the nanoimprint process and allow thick metal sacrificial layer deposition for high aspect-ratio etching, a transfer imprint lithography technique was developed. Finally, surface plasmon resonance (SPR) tuning via thermally-induced refractive index changes in ferroelectrics was investigated. Ag stripes with periodicity 750 nm were fabricated on flat BST surface by nanoimprint lithography and subsequent lift-off. (-1), (2) and (-2) SP modes from Ag/BST interface were observed in visible range. Red shift of the modes up to 3.9 nm was obtained with increasing temperature. Then continuous Au film on corrugated BST surface with periodicity of 1 mum was

  16. Magnetophoretic-based microfluidic device for DNA isolation

    PubMed Central

    Hale, C.; Darabi, J.

    2014-01-01

    This paper presents a continuous flow microfluidic device for the separation of DNA from blood using magnetophoresis for biological applications and analysis. This microfluidic bio-separation device has several benefits, including decreased sample handling, smaller sample and reagent volumes, faster isolation time, and decreased cost to perform DNA isolation. One of the key features of this device is the use of short-range magnetic field gradients, generated by a micro-patterned nickel array on the bottom surface of the separation channel. In addition, the device utilizes an array of oppositely oriented, external permanent magnets to produce strong long-range field gradients at the interfaces between magnets, further increasing the effectiveness of the device. A comprehensive simulation is performed using COMSOL Multiphysics to study the effect of various parameters on the magnetic flux within the separation channel. Additionally, a microfluidic device is designed, fabricated, and tested to isolate DNA from blood. The results show that the device has the capability of separating DNA from a blood sample with a purity of 1.8 or higher, a yield of up to 33 μg of polymerase chain reaction ready DNA per milliliter of blood, and a volumetric throughput of up to 50 ml/h. PMID:25379103

  17. Trace explosive sensor devices based on semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Wang, Danling

    This dissertation discusses an explosive sensing device based on semiconductor nanomaterials. Here, we mainly focus on two kinds of materials: titanium dioxide nanowires and silicon nanowires to detect explosive trace vapor. Herein, methods for the synthesis, fabrication, design of nanostructured sensing materials using low-cost hydrothermal process are present. In addition, the nanomaterials have been systemically tested on different explosive. The first part of dissertation is focused on the fabrication of TiO2(B) dominant nanowires and testing the response to explosives. It was found that the high porous TiO2(B) nanowires when mixed anatase TiO2, exhibit a very fast and highly sensitive response to nitro-containing explosives. The second part of dissertation has studied the basic sensing mechanism of TiO2(B) nanowire sensor to detect explosives. It shows the specific surface characteristics of TiO2 responsible for the nitro-containing explosives. This information is then used to propose a method using UV illumination to reduce the effect of water vapor on TiO2(B) nanowires. The third part discussed an explosive sensor based on silicon nanowires. We analyzed the mechanism of silicon nanowires to detect nitro-related explosive compounds. In order to further investigate the sensing mechanism of TiO2, the fourth part of dissertation studies the effect on sensor performance by using different crystal phases of TiO2, different microstructure of TiO2, surface modification of TiO2, and different kinds of nanostructured semiconductors such as ZnO nanowires, TiO2 coated ZnO nanowires, V2O5 nanowires, and CdS nanowires to detect explosives. It is found that only TiO2 related semiconductor shows good response to explosives.

  18. Green electroluminescence from Tb4O7 films on silicon: Impact excitation of Tb3+ ions by hot carriers

    NASA Astrophysics Data System (ADS)

    Zhu, Chen; Lv, Chunyan; Jiang, Miaomiao; Zhou, Junwei; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2016-02-01

    We report on green electroluminescence (EL) due to the intra-4f transitions of the trivalent terbium (Tb3+) ions inherent in a Tb4O7 film that is sandwiched between the ITO film and heavily phosphorous- or boron-doped silicon (n+-Si or p+-Si) substrate, thus forming the so-called metal-oxide-semiconductor (MOS) device. The onset voltage of such EL is below 10 V. From the current-voltage characteristic and voltage-dependent EL spectra of the aforementioned MOS device, it is derived that the Tb-related green EL results from the impact excitation of Tb3+ ions by the hot electrons (holes), which stem from the electric-field acceleration of the electrons (holes) injected from the n+-Si (p+-Si) substrate via the trap-assisted tunneling mechanism.

  19. Spatially resolved electroluminescence of InGaN-MQW-LEDs[Multiple Quantum Wells-Light Emitting Diodes

    SciTech Connect

    Schwegler, V.; Seyboth, M.; Kirchner, C.; Scherer, M.; Kamp, M.; Fischer, P.; Christen, J.; Zacharias, M.

    2000-07-01

    Electroluminescence (EL) is the most significant measure for light-emitting diodes since it probes the most relevant properties of the fully processed device during operation. In addition to the information gained by conventional spectrally resolved EL, scanning micro-EL provides spatially resolved information. The devices under investigation are InGaN/GaN-LEDs with single peak band-band emission at about 400 nm grown by MOVPE on sapphire substrates. The {mu}-EL-characterization is performed as a function of injection current densities and the emission is investigated from the epitaxial layer as well as from substrate side. Spatially resolved wavelength images reveal emission peaks between 406 nm and 417 nm, corresponding either to In fluctuations of 1--1.5% or local fluctuations of piezo electric fields. Beside the information on the emission wavelength fluctuations {mu}-EL is used to determine the temperature distribution in the LEDs and to investigate transparent contacts.

  20. Enhanced electroluminescence from a free-standing tensilely strained germanium nanomembrane light-emitting diode

    NASA Astrophysics Data System (ADS)

    Jingming, Chen; Bin, Shu; Jibao, Wu; Linxi, Fan; Heming, Zhang; Huiyong, Hu; Rongxi, Xuan; Jianjun, Song

    2015-10-01

    Ge has become a promising material for Si-based optoelectronic integrated circuits (OEIC) due to its pseudo-direct bandgap. In this paper we achieved tensilely strained Ge free-standing nanomembrane (NM) light-emitting diode (LED), using silicon nitride thin film with high stress. The tensile stress in the Ge layer can be controlled by adjustable process parameters. An expected redshift of electroluminescence (EL) in Ge NM LED is observed at room temperature, which has been attributed to the shrinking of its direct bandgap relative to its indirect bandgap. An EL with dramatically increased intensity was observed around 1876 nm at a tensile strain of 1.92%, which demonstrates the direct-band recombination in tensilely strained Ge NM. Project supported by the Fundamental Research Funds for the Central University of China (No. 7214428001).

  1. Carbon Nanotube Effects on Electroluminescence and Photovoltaic Response in Conjugated Polymers

    SciTech Connect

    Xu, Zhihua; Wu, Yue; Hu, Bin; Ivanov, Ilia N; Geohegan, David B

    2005-01-01

    This letter reports the experimental results of enhanced electroluminescence (EL) and photovoltaic (PV) response upon doping single-wall carbon nanotubes (SWNTs) into conjugated polymer poly[2-methoxy-5-(2{prime}-ethylhexyloxy)-1, 4-phenylenevinylene] (MEHPPV) based on single-layer light-emitting diodes. We found that the dispersed SWNTs result in two processes: charge transport and exciton dissociation at the tube-chain interface in the SWNT/polymer composites. The detailed EL and PV studies indicate that low SWNT doping concentrations mainly improve the bipolar charge injection, leading to enhanced both reverse and forward EL with reduced threshold voltage. As the SWNT doping concentration continues to increase, the interfacial exciton dissociation becomes dominated, giving rise to an increased PV response. This SWNT concentration-dependent charge transport and exciton dissociation present a pathway to individually address the dual EL and PV functionalities of SWNT-doped polymer composites by controlling the doping level of the SWNTs.

  2. Graphene Electronic Device Based Biosensors and Chemical Sensors

    NASA Astrophysics Data System (ADS)

    Jiang, Shan

    Two-dimensional layered materials, such as graphene and MoS2, are emerging as an exciting material system for a new generation of atomically thin electronic devices. With their ultrahigh surface to volume ratio and excellent electrical properties, 2D-layered materials hold the promise for the construction of a generation of chemical and biological sensors with unprecedented sensitivity. In my PhD thesis, I mainly focus on graphene based electronic biosensors and chemical sensors. In the first part of my thesis, I demonstrated the fabrication of graphene nanomesh (GNM), which is a graphene thin film with a periodic array of holes punctuated in it. The periodic holes introduce long periphery active edges that provide a high density of functional groups (e.g. carboxylic groups) to allow for covalent grafting of specific receptor molecules for chemical and biosensor applications. After covalently functionalizing the GNM with glucose oxidase, I managed to make a novel electronic sensor which can detect glucose as well as pH change. In the following part of my thesis I demonstrate the fabrication of graphene-hemin conjugate for nitric oxide detection. The non-covalent functionalization through pi-pi stacking interaction allows reliable immobilization of hemin molecules on graphene without damaging the graphene lattice to ensure the highly sensitive and specific detection of nitric oxide. The graphene-hemin nitric oxide sensor is capable of real-time monitoring of nitric oxide concentrations, which is of central importance for probing the diverse roles of nitric oxide in neurotransmission, cardiovascular systems, and immune responses. Our studies demonstrate that the graphene-hemin sensors can respond rapidly to nitric oxide in physiological environments with sub-nanomolar sensitivity. Furthermore, in vitro studies show that the graphene-hemin sensors can be used for the detection of nitric oxide released from macrophage cells and endothelial cells, demonstrating their

  3. Optical devices based on dye-coated superconductor junctions: An example of a composite molecule-superconductor device

    SciTech Connect

    Zhao, J.; Jurbergs, D.; Yamazi, B.; McDevitt, J.T.

    1992-03-25

    High-temperature superconductors provide new opportunities as materials used in the construction of hybrid molecule-superconductor components. Here, the authors describe fabrication methods for and operation of optical sensors based on molecular dye-coated superconductor junctions. Devices prepared from yttrium barium cuprates and using octaethylporphyrin, phthalocyanine, and rhodamine 6G as dyes have been prepared. 9 refs., 1 fig.

  4. CO2 laser cutting and ablative etching for the fabrication of paper-based devices

    NASA Astrophysics Data System (ADS)

    Spicar-Mihalic, P.; Toley, B.; Houghtaling, J.; Liang, T.; Yager, P.; Fu, E.

    2013-06-01

    We describe a method for fabricating paper-based microfluidic devices using a commercially available CO2 laser system. The method is versatile and allows for controlled through-cutting and ablative etching of nitrocellulose substrates. In addition, the laser system can cut a variety of components that are useful in the fabrication of paper-based devices, including cellulose wicking pads, glass fiber source pads and Mylar-based substrates for the device housing.

  5. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, Nosoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-06-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

  6. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes.

    PubMed

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-01-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. PMID:26067060

  7. Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes

    PubMed Central

    Kyu Kim, Jung; Bae, Sukang; Yi, Yeonjin; Jin Park, Myung; Jin Kim, Sang; Myoung, NoSoung; Lee, Chang-Lyoul; Hee Hong, Byung; Hyeok Park, Jong

    2015-01-01

    Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. PMID:26067060

  8. Photoluminescent and electroluminescent properties of Mn-doped ZnS nanocrystals

    NASA Astrophysics Data System (ADS)

    Yang, Heesun; Holloway, Paul H.; Ratna, Banahalli B.

    2003-01-01

    ZnS:Mn nanocrystals with sizes between 3 and 4 nm were synthesized via a competitive reaction chemistry method, where the surface capping organic species (p-thiocresol) is used as an inhibitor of the crystal growth. The x-ray diffraction and photoluminescent (PL) properties of ZnS:Mn bulk and nanocrystals were compared. A direct current electroluminescent (EL) device having a hybrid organic/inorganic multilayer structure, indium tin oxide/poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS)/PVK/ZnS:Mn NC/Al, was tested. In this multilayer EL device structure, the PEDOT-PSS leads to enhanced hole injection, while the poly(N-vinylcarbazole) (PVK) serves as a passivation layer between the PEDOT-PSS and nanocrystal layers. Electron-hole recombination was not confined to the ZnS:Mn nanocrystal layer, but also occurred in the PVK layer. The result was emission from both the blue-emitting PVK and yellow-emitting ZnS:Mn nanocrystals. The EL emission spectrum was dependent upon the voltage, showing an increasing ratio of PVK emission to nanocrystal emission with increased voltage. The dependence of PL and EL emissions on Mn concentration (0.40 to 2.14 mol %) is also reported.

  9. II-VI Materials-Based High Performance Intersubband Devices

    NASA Astrophysics Data System (ADS)

    Ravikumar, Arvind Pawan

    achieve normal-incident absorption, taking advantage of light-scattering in sloped surfaces; this method is wavelength independent and does not involve complicated fabrication techniques. With the performance of II-VI devices matching or surpassing existing commercial solutions, integrated mid-IR photonics based sensing is poised to play a big role in the future of sensing technologies.

  10. Ultraviolet electroluminescence from ZnO/p-Si heterojunctions

    SciTech Connect

    Chen, Peiliang; Ma, Xiangyang; Yang, Deren

    2007-03-01

    Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p{sup -}) and heavily boron-doped (p{sup +}) silicon substrates. The sputtered ZnO films were identified to be highly <002> oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO/p{sup -}-Si heterojunction exhibited well-defined rectifying behavior while the ZnO/p{sup +}-Si heterojunction did not possess rectifying function. As for the ZnO/p{sup +}-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO/p{sup +}-Si heterojunction, the ZnO/p{sup -}-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

  11. High-sensitivity strain visualization using electroluminescence technologies

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Jo, Hongki

    2016-04-01

    Visualizing mechanical strain/stress changes is an emerging area in structural health monitoring. Several ways are available for strain change visualization through the color/brightness change of the materials subjected to the mechanical stresses, for example, using mechanoluminescence (ML) materials and mechanoresponsive polymers (MRP). However, these approaches were not effectively applicable for civil engineering system yet, due to insufficient sensitivity to low-level strain of typical civil structures and limitation in measuring both static and dynamic strain. In this study, design and validation for high-sensitivity strain visualization using electroluminescence technologies are presented. A high-sensitivity Wheatstone bridge, of which bridge balance is precisely controllable circuits, is used with a gain-adjustable amplifier. The monochrome electroluminescence (EL) technology is employed to convert both static and dynamic strain change into brightness/color change of the EL materials, through either brightness change mode (BCM) or color alternation mode (CAM). A prototype has been made and calibrated in lab, the linearity between strain and brightness change has been investigated.

  12. 78 FR 36698 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-19

    ... Nucleic Acid-Based Systems for Mycobacterium tuberculosis Complex in Respiratory Specimens AGENCY: Food...) is proposing to reclassify nucleic acid-based in vitro diagnostic devices for the detection of... Controls Guideline: Nucleic Acid-Based In Vitro Diagnostic Devices for the Detection of...

  13. Carbonitride based phosphors and light emitting devices using the same

    DOEpatents

    Li, Yuanqiang; Tian, Yongchi; Romanelli, Michael Dennis

    2013-08-20

    Disclosed herein is a novel group of carbidonitride phosphors and light emitting devices which utilize these phosphors. In certain embodiments, the present invention is directed to a novel family of carbidonitride-based phosphors expressed as follows: Ca.sub.1-xAl.sub.x-xySi.sub.1-x+xyN.sub.2-x-xyC.sub.xy:A; (1) Ca.sub.1-x-zNa.sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xyC.sub.xy:- A; (2) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x- -xyC.sub.xy:A; (3) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3C.sub.xyO.sub.w-v/2H.sub.v:A; and (4) M(II).sub.1-x-zM(I).sub.zM(III).sub.x-xy-zSi.sub.1-x+xy+zN.sub.2-x-xy-2w/- 3-v/3C.sub.xyO.sub.wH.sub.v:A, (4a) wherein 0xy+z, and 0

  14. Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

    NASA Astrophysics Data System (ADS)

    Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio

    2015-12-01

    The Graphene-Base Heterojunction Transistor (GBHT) is a novel device concept with a high potential for analog high-frequency RF operation, in which the current is due to both thermionic emission and tunneling. In this paper we study through numerical simulations the influence of previously uninvestigated aspects of Si- and Ge-based GBHTs-namely, crystallographic orientation and doping density values-on the device performance; a comparison with an aggressively scaled HBT structure is then reported. The simulations are carried out with an in-house developed code based on a 1-D quantum transport model within the effective mass approximation and the assumptions of ballistic transport with non-parabolic corrections and ideal semiconductor-graphene interface. We show that crystallographic orientation has a negligible effect on the GBHT performance. The doping density values in the GBHT emitter and collector regions can be tailored to maximize the device performance: the Si device shows better overall performance than the Ge one, yielding a peak cut-off frequency fT higher than 4 THz together with an intrinsic voltage gain above 10, or even higher fT at the cost of a lower gain. The Si-based GBHT can potentially outperform the SiGe HBT by a 2.8 higher fT . For a Si-based GBHT with a circular active region of diameter 50-100 nm, a theoretical balanced value for fT and fmax above 2 THz can be achieved, provided the base parasitics are carefully minimized.

  15. Alternating current thin film electroluminescence in the near infrared from zinc sulfide doped with rare earths

    NASA Astrophysics Data System (ADS)

    Kale, Ajay

    Near infrared emission (0.7--1.5 mum) of zinc sulfide (ZnS) doped with erbium (Er) or neodymium (Nd) has been studied in alternating current thin film electroluminescent devices (ACTFELDs). The electroluminescent (EL) thin film phosphors were radio frequency planar magnetron sputter deposited by co-sputtering an undoped ZnS target together with a ZnS: 1.5 mole% ErF 3 or ZnS: 1.5 mole% NdF3 target. The ZnS:ErF3 and ZnS:NdF3 thin film phosphors were annealed for one hour in ultra high purity N2 at temperatures ranging from 350--475°C. Annealing at 425°C for 1 hour in nitrogen was the optimal post-deposition treatment for both the ZnS:ErF3, and ZnS:NdF3 thin film phosphors, resulting in EL power densities of 7.5 and 28 muW/cm2 for the 990nm and the 1550nm emission of ZnS:ErF3, respectively. The power densities were 7.5 (750%) and 28 (2800%) times larger than those from the as-deposited films, which exhibited a power density ˜1muW/cm 2 at both wavelengths. In the case of ZnS:NdF3, 26 and 15 muW/cm2 deposited samples. Post-deposition annealing resulted in a 8 and 1.5 times increase in total device efficiency to 0.42 W/W and 0.7 W/W) for ZnS:ErF3 and ZnS:NdF3, respectively. This was attributed to a reduction in the concentration of shallow defects, which leads to a larger effective phosphor field and band bending, an increase in the conduction charge, and a reduction of inelastic scattering of ballistic electrons. While the peak emission wavelengths from Er were independent of annealing temperature, peak shifts were observed for Nd due to hybridization of the 5d-4f orbitals. At annealing temperatures <425°C, the density of shallow traps is high, and electrons from higher energy excited states of the luminescent ions to shallow, non-radiative defect levels pump the lower energy IR states. For annealing temperatures >425°C, the shallow defect states are annealed out, leading to more efficient direct radiative relaxation from the higher lying excited states, and more

  16. [Spectral characteristics of white organic light-emitting devices based on phosphorescent system of three iridium chelates].

    PubMed

    Liu, Sheng-Qiang; Yu, Jun-Sheng; Zeng, Yan-Bo; Zhao, Juan; Du, Chun-Lei

    2013-03-01

    A white organic light-emitting device (WOLED) with a yellow phosphorescence material, bis[2-(4-tertbutylphenyl) benzothiazolato-N,C2 '] iridium (acetylacetonate) [(t-bt)2Ir(acac)], and two blue phosphorescence materials, iridium(Ill) bis (4', 6'-difluorophenylpyridinato) tetrakis(1-pyrazolyl) borate (FIr6) and bis[(4, 6-difluorophenyl)-pyridinato-N, C2 '] (picolinate) iridium (III) (FIrpic), were fabricated. Stable white emission was realized by using undoped ultrathin yellow emissive layer (EML), two doped blue EMLs together with the proper thickness of an interlayer confining the exciton. The WOLED performed pure white light emission with the Commissions Internationale de l'Eclairage (CIE) coordinates of (0.29+/-0.01, 0.34+/-0.01) from 6 to 14 V. Moreover, electroluminescence (EL) characteristics of the devices were also studied to verify the emissive mechanism from a phosphorescent system consisting of three iridium chelates. Also, the results showed that the triple-phosphor-element EMLs WOLED had lower efficiency roll-off owing to the stable recombination zone. PMID:23705423

  17. Photoresponsive memory device based on Graphene/Boron Nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Kahn, Salman; Velasco, Jairo, Jr.; Ju, Long; Wong, Dillon; Lee, Juwon; Tsai, Hsin Zon; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael

    2015-03-01

    Recent technological advancements have allowed the stacking of two dimensional layered material in order to create van der Waals heterostructures (VDH), enabling the design of novel properties by exploiting the proximal interaction between layers with different electronic properties. We report the creation of an optoelectronic memory device using a Graphene/Boron Nitride (hBN) heterostructure. Using the photo-induced doping phenomenon, we are able to spatially ``write'' a doping profile on graphene and ``read'' the profile through electrical transport and local probe techniques. We then utilize defect engineering to enhance the optoelectronic response of graphene and explore the effect of defects in hBN. Our work introduces a simple device architecture to create an optoelectronic memory device and contributes towards understanding the proximal effects of hBN on Graphene.

  18. A novel thermal acoustic device based on porous graphene

    NASA Astrophysics Data System (ADS)

    Tao, Lu-Qi; Liu, Ying; Tian, He; Ju, Zhen-Yi; Xie, Qian-Yi; Yang, Yi; Ren, Tian-Ling

    2016-01-01

    A thermal acoustic (TA) device was fabricated by laser scribing technology. Polyimide (PI) can be converted into patterned porous graphene (PG) by laser's irradiation in one step. The sound pressure level (SPL) of such TA device is related to laser power. The theoretical model of TA effect was established to analyze the relationship between the SPL and laser power. The theoretical results are in good agreement with experiment results. It was found that PG has a flat frequency response in the range of 5-20 kHz. This novel TA device has the advantages of one-step procedure, high flexibility, no mechanical vibration, low cost and so on. It can open wide applications in speakers, multimedia, medical, earphones, consumer electronics and many other aspects.

  19. Polymer-based actuators for virtual reality devices

    NASA Astrophysics Data System (ADS)

    Bolzmacher, Christian; Hafez, Moustapha; Benali Khoudja, Mohamed; Bernardoni, Paul; Dubowsky, Steven

    2004-07-01

    Virtual Reality (VR) is gaining more importance in our society. For many years, VR has been limited to the entertainment applications. Today, practical applications such as training and prototyping find a promising future in VR. Therefore there is an increasing demand for low-cost, lightweight haptic devices in virtual reality (VR) environment. Electroactive polymers seem to be a potential actuation technology that could satisfy these requirements. Dielectric polymers developed the past few years have shown large displacements (more than 300%). This feature makes them quite interesting for integration in haptic devices due to their muscle-like behaviour. Polymer actuators are flexible and lightweight as compared to traditional actuators. Using stacks with several layers of elatomeric film increase the force without limiting the output displacement. The paper discusses some design methods for a linear dielectric polymer actuator for VR devices. Experimental results of the actuator performance is presented.

  20. Fabrication of 1-dimension nano-material-based device and its electrical characteristics

    NASA Astrophysics Data System (ADS)

    Yang, Xing; Zhou, Zhaoying; Zheng, Fuzhong; Zhang, Min

    2008-12-01

    In recent years, many kinds of 1-dimension nano-materials (Carbon nanotube, ZnO nanobelt and nanowire etc.) continue to emerge which exhibit distinct and unique electromechanical, piezoelectric, photoelectrical properties. In this paper, a 1-dimension nano-materials-based device was proposed. The bottom-up and top-down combined process were used for constructing CNT-array-based device and ZnO nanowire device. The electrical characteristics of the 1D nano-materials-based devices were also investigated. The measurement results of electrical characteristics demonstrate that it is ohm electrical contact behavior between the nano-material and micro-electrodes in the proposed device which also have the field effect. The proposed 1D nano-material-based device shows the application potential in the sensing fields.

  1. Solution-processed low dimensional nanomaterials with self-assembled polymers for flexible photo-electronic devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Park, Cheolmin

    2015-09-01

    Self assembly driven by complicated but systematic hierarchical interactions offers a qualified alternative for fabricating functional micron or nanometer scale pattern structures that have been potentially useful for various organic and nanotechnological devices. Self assembled nanostructures generated from synthetic polymer systems such as controlled polymer blends, semi-crystalline polymers and block copolymers have gained a great attention not only because of the variety of nanostructures they can evolve but also because of the controllability of these structures by external stimuli. In this presentation, various novel photo-electronic materials and devices are introduced based on the solution-processed low dimensional nanomaterials such as networked carbon nanotubes (CNTs), reduced graphene oxides (rGOs) and 2 dimensional transition metal dichalcogenides (TMDs) with self assembled polymers including field effect transistor, electroluminescent device, non-volatile memory and photodetector. For instance, a nanocomposite of networked CNTs and a fluorescent polymer turned out an efficient field induced electroluminescent layer under alternating current (AC) as a potential candidate for next generation displays and lightings. Furthermore, scalable and simple strategies employed for fabricating rGO as well as TMD nanohybrid films allowed for high performance and mechanically flexible non-volatile resistive polymer memory devices and broad band photo-detectors, respectively.

  2. An oxide-based thermoelectric generator: Transversal thermoelectric strip-device

    NASA Astrophysics Data System (ADS)

    Teichert, S.; Bochmann, A.; Reimann, T.; Schulz, T.; Dreßler, C.; Töpfer, J.

    2015-07-01

    A special design of an oxide-based transversal thermoelectric device utilizing thermoelectric oxides in combination with a ceramic multilayer technology is proposed. Metal strips within the ceramic matrix replace the tilted stack of alternating layers used in artificial anisotropic transversal thermoelectric devices. Numerical three-dimensional simulations of both device types reveal better thermoelectric performance data for the device with metal stripes. A monolithic transversal strip-device based on the material combination La1.97Sr0.03CuO4/Ag6Pd1 was prepared and electrically characterized. A maximum power output of 4.0 mW was determined at ΔT = 225 K for the monolithic device. The observed results are in remarkable agreement with three-dimensional numerical simulations utilizing the transport parameters of the two materials and the geometry data of the device.

  3. Electrochromic device based on D-A type viologen

    NASA Astrophysics Data System (ADS)

    Li, Mei; Zheng, Jianming; Chen, Shen; Xu, Chunye

    2011-11-01

    Electrochromism is the phenomenon displayed by some color changing materials when a burst of charge is applied. Viologens (Vio) are cathodic electrochromic materials, and triphenylamines (TPA) are anodic electrochromic materials. Here, we reported a new electrochromic compound composed of Vio, TPA and phosphonic acid groups, thus the molecules can be anchored on electrode, which will lead to faster switching speed and high stability. An electrochromic device was assembled using the new Vio as primary electrochromes and Prussian blue as secondary electrochromes. The device exhibits high transparency. In addition, it shows fast switching speed and good stability.

  4. Electrochromic device based on D-A type viologen

    NASA Astrophysics Data System (ADS)

    Li, Mei; Zheng, Jianming; Chen, Shen; Xu, Chunye

    2012-04-01

    Electrochromism is the phenomenon displayed by some color changing materials when a burst of charge is applied. Viologens (Vio) are cathodic electrochromic materials, and triphenylamines (TPA) are anodic electrochromic materials. Here, we reported a new electrochromic compound composed of Vio, TPA and phosphonic acid groups, thus the molecules can be anchored on electrode, which will lead to faster switching speed and high stability. An electrochromic device was assembled using the new Vio as primary electrochromes and Prussian blue as secondary electrochromes. The device exhibits high transparency. In addition, it shows fast switching speed and good stability.

  5. Infrared-sensitive electrochromic device based on VO2

    NASA Astrophysics Data System (ADS)

    Nakano, M.; Shibuya, K.; Ogawa, N.; Hatano, T.; Kawasaki, M.; Iwasa, Y.; Tokura, Y.

    2013-10-01

    The field-effect transistor (FET) provides an electrical switching function of current flowing through a channel surface by external voltage. Here, we report on a field-effect device that enables electrical switching of optical transmittance as well as conventional electrical current. We investigated optical properties of vanadium dioxide (VO2) thin film under the presence of electric field generated at the interface between VO2 and ionic liquid in a FET geometry, and found that the device exhibits clear electrochromic effect with large ON/OFF contrast only in the infrared region, potentially beneficial for energy-saving smart window applications as a voltage-tunable transparent heat-cutting filter.

  6. A quantum optical firewall based on simple quantum devices

    NASA Astrophysics Data System (ADS)

    Amellal, H.; Meslouhi, A.; Hassouni, Y.; El Baz, M.

    2015-07-01

    In order to enhance the transmission security in quantum communications via coherent states, we propose a quantum optical firewall device to protect a quantum cryptosystem against eavesdropping through optical attack strategies. Similar to the classical model of the firewall, the proposed device gives legitimate users the possibility of filtering, controlling (input/output states) and making a decision (access or deny) concerning the traveling states. To prove the security and efficiency of the suggested optical firewall, we analyze its performances against the family of intercept and resend attacks, especially against one of the most prominent attack schemes known as "Faked State Attack."

  7. Microfluidic paper-based devices for bioanalytical applications.

    PubMed

    Santhiago, Murilo; Nery, Emilia W; Santos, Glauco P; Kubota, Lauro T

    2014-01-01

    Paper has become increasingly recognized as a very interesting substrate for the construction of microfluidic devices, with potential application in a variety of areas, including health diagnosis, environmental monitoring, immunoassays and food safety. The aim of this review is to present a short history of analytical systems constructed from paper, summarize the main advantages and disadvantages of fabrication techniques, exploit alternative methods of detection such as colorimetric, electrochemical, photoelectrochemical, chemiluminescence and electrochemiluminescence, as well as to take a closer look at the novel achievements in the field of bioanalysis published during the last 2 years. Finally, the future trends for production of such devices are discussed. PMID:24341497

  8. Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)

    SciTech Connect

    Mezdrogina, M. M. Kostina, L. S.; Beliakova, E. I.; Kuzmin, R. V.

    2013-09-15

    The photo- and electroluminescence spectra of silicon-based structures formed by direct bonding with simultaneous doping with rare-earth metals are studied. It is shown that emission in the visible and IR spectral ranges can be obtained from n-Si:Er/p-Si and n-Si:Eu/p-Si structures fabricated by the method suggested in the study. The results obtained make this method promising for the fabrication of optoelectronic devices.

  9. Organic light-emitting devices using spin-dependent processes

    DOEpatents

    Vardeny, Z. Valy; Wohlgenannt, Markus

    2010-03-23

    The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

  10. Nanotechnology Based Materials and Devices for Health Care

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepaka; Cho, K.; Brenner, Don; Menon, Madhu; Andriotis, Antonis; Sagman, Uri; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    This viewgraph presentation provides information on trends in NASA nanotechnology research and development, and future biotechnological applications for that nanotechnology. The presentation covers nanoelectronics, nanosensors, and nanomaterials, biomimetics, devices and materials for health care, carbon nanotubes, biosensors for astrobiology, solid-state nanopores for DNA sequencing, and protein nanotubes.

  11. Web-Based Spatial Training Using Handheld Touch Screen Devices

    ERIC Educational Resources Information Center

    Martin-Dorta, Norena; Saorin, Jose Luis; Contero, Manuel

    2011-01-01

    This paper attempts to harness the opportunities for mobility and the new user interfaces that handheld touch screen devices offer, in a non-formal learning context, with a view to developing spatial ability. This research has addressed two objectives: first, analyzing the effects that training can have on spatial visualisation using the…

  12. Molecular gels-based controlled release devices for pheromones

    Technology Transfer Automated Retrieval System (TEKTRAN)

    2-Heptanone is a volatile solvent that is effective in controlling parasitic mites (Varroa) in honeybee. Controlled-release of 2-heptanone is needed to avoid overdosing, minimize chemical usage, and provide a sustained release over a several week period. Control-release devices comprised of a reserv...

  13. Superlattice-based quantum devices: from theory to practical applications

    NASA Astrophysics Data System (ADS)

    Razeghi, M.

    2014-07-01

    The concepts of resonant tunneling and superlattices were first developed by Esaki and Tsu. What started with the new physics of the Esaki tunnel diode has matured into nanoscale engineering of semiconductors superlattices to create whole synthetic band structures. While working at Thomson CSF in France, Manijeh Razeghi went on to develop the metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy growth of superlattice material as reported in my seminal volumes of The MOCVD Challenge. After years of considerable effort to bring this technology to maturity, we now see the results of this formidable new science in almost every electronic and photonic device that we encounter. Among the most successful triumphs are the type-II superlattice photodetectors and quantum cascade lasers - these technologies have demonstrated the beauty of turning fundamental concepts into practical devices, thanks to advanced growth technologies. This enables us to design and realize compact devices capable of mimicking or even exceeding nature. Using superlattice to pioneer the development of quantum systems is driving the research work at the Center for Quantum Devices.

  14. Novel compound semiconductor devices based on III-V nitrides

    SciTech Connect

    Pearton, S.J.; Abernathy, C.R.; Ren, F.

    1995-10-01

    New developments in dry and wet etching, ohmic contacts and epitaxial growth of Ill-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts.

  15. Optically switchable molecular device using microsphere based junctions

    NASA Astrophysics Data System (ADS)

    Faramarzi, V.; Raimondo, C.; Reinders, F.; Mayor, M.; Samorı, P.; Doudin, B.

    2011-12-01

    Metallic planar electrodes are bridged using microspheres coated with chemisorbed azobenzene self-assembled monolayers. The circuit exhibits light-induced switching, with reproducibility over 90%, as statistically determined and compared to junctions incorporating photo-insensitive alkanethiol layers. Microsphere interconnects provide direct access to molecular transport properties, with reliability and stability, making multifunctional molecular electronics devices possible.

  16. GPU-based Parallel Application Design for Emerging Mobile Devices

    NASA Astrophysics Data System (ADS)

    Gupta, Kshitij

    A revolution is underway in the computing world that is causing a fundamental paradigm shift in device capabilities and form-factor, with a move from well-established legacy desktop/laptop computers to mobile devices in varying sizes and shapes. Amongst all the tasks these devices must support, graphics has emerged as the 'killer app' for providing a fluid user interface and high-fidelity game rendering, effectively making the graphics processor (GPU) one of the key components in (present and future) mobile systems. By utilizing the GPU as a general-purpose parallel processor, this dissertation explores the GPU computing design space from an applications standpoint, in the mobile context, by focusing on key challenges presented by these devices---limited compute, memory bandwidth, and stringent power consumption requirements---while improving the overall application efficiency of the increasingly important speech recognition workload for mobile user interaction. We broadly partition trends in GPU computing into four major categories. We analyze hardware and programming model limitations in current-generation GPUs and detail an alternate programming style called Persistent Threads, identify four use case patterns, and propose minimal modifications that would be required for extending native support. We show how by manually extracting data locality and altering the speech recognition pipeline, we are able to achieve significant savings in memory bandwidth while simultaneously reducing the compute burden on GPU-like parallel processors. As we foresee GPU computing to evolve from its current 'co-processor' model into an independent 'applications processor' that is capable of executing complex work independently, we create an alternate application framework that enables the GPU to handle all control-flow dependencies autonomously at run-time while minimizing host involvement to just issuing commands, that facilitates an efficient application implementation. Finally, as

  17. Shock Wave Based Biolistic Device for DNA and Drug Delivery

    NASA Astrophysics Data System (ADS)

    Nakada, Mutsumi; Menezes, Viren; Kanno, Akira; Hosseini, S. Hamid R.; Takayama, Kazuyoshi

    2008-03-01

    A shock wave assisted biolistic (biological ballistic) device has been developed to deliver DNA/drug-coated micro-projectiles into soft living targets. The device consists of an Nd:YAG laser, an optical setup to focus the laser beam and, a thin aluminum (Al) foil (typically 100 µm thick) which is a launch pad for the micro-projectiles. The DNA/drug-coated micro-particles to be delivered are deposited on the anterior surface of the foil and the posterior surface of the foil is ablated using the laser beam with an energy density of about 32×109 W/cm2. The ablation launches a shock wave through the foil that imparts an impulse to the foil surface, due to which the deposited particles accelerate and acquire sufficient momentum to penetrate soft targets. The device has been tested for particle delivery by delivering 1 µm size tungsten particles into liver tissues of experimental rats and in vitro test models made of gelatin. The penetration depths of about 90 and 800 µm have been observed in the liver and gelatin targets, respectively. The device has been tested for in vivo DNA [encoding β-glucuronidase (GUS) gene] transfer by delivering plasmid DNA-coated, 1-µm size gold (Au) particles into onion scale, tobacco leaf and soybean seed cells. The GUS activity was detected in the onion, tobacco and soybean cells after the DNA delivery. The present device is totally non-intrusive in nature and has a potential to get miniaturized to suit the existing medical procedures for DNA and/or drug delivery.

  18. Ex post manipulation of barriers in InGaAs tunnel injection devices

    SciTech Connect

    Talalaev, Vadim G.; Cirlin, George E.; Novikov, Boris V.; Fuhrmann, Bodo; Werner, Peter; Tomm, Jens W.

    2015-01-05

    Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

  19. Contactless Electroluminescence Imaging for Cell and Module Characterization

    SciTech Connect

    Johnston, Steve

    2015-06-14

    Module performance can be characterized by imaging using baseline and periodic images to track defects and degradation. Both thermal images, which can be acquired during sunny operating conditions, and photoluminescence images, which could be acquired at night, can be collected without electrical connection. Electroluminescence (EL) images, which are useful to detect many types of defects such as cracks, interconnect and solder faults, and resistances, have typically required electrical connection to drive current in the cells and modules. Here, a contactless EL imaging technique is proposed, which provides an EL image without the need for electrical connection to drive current through the module. Such EL imaging has the capability to be collected at night without disruption to daytime power generation.

  20. Highly stretchable electroluminescent skin for optical signaling and tactile sensing.

    PubMed

    Larson, C; Peele, B; Li, S; Robinson, S; Totaro, M; Beccai, L; Mazzolai, B; Shepherd, R

    2016-03-01

    Cephalopods such as octopuses have a combination of a stretchable skin and color-tuning organs to control both posture and color for visual communication and disguise. We present an electroluminescent material that is capable of large uniaxial stretching and surface area changes while actively emitting light. Layers of transparent hydrogel electrodes sandwich a ZnS phosphor-doped dielectric elastomer layer, creating thin rubber sheets that change illuminance and capacitance under deformation. Arrays of individually controllable pixels in thin rubber sheets were fabricated using replica molding and were subjected to stretching, folding, and rolling to demonstrate their use as stretchable displays. These sheets were then integrated into the skin of a soft robot, providing it with dynamic coloration and sensory feedback from external and internal stimuli. PMID:26941316

  1. High circular polarization in electroluminescence from MoSe2

    NASA Astrophysics Data System (ADS)

    Onga, Masaru; Zhang, Yijin; Suzuki, Ryuji; Iwasa, Yoshihiro

    2016-02-01

    The coupling between the valley degree of freedom and the optical helicity is one of the unique phenomena in transition metal dichalcogenides. The significant valley polarization evaluated from circularly polarized photoluminescence (PL) has been reported in many transition metal dichalcogenides, except in MoSe2. This compound is an anomalous material showing ultra-fast relaxation of the valley polarized states, which causes negligible polarization in the PL. Meanwhile, circularly polarized electroluminescence (EL) has been recently reported in a WSe2 light-emitting transistor, providing another method for using the valley degree of freedom. Here, we report the EL properties of MoSe2, demonstrating electrical switching of the optical helicity. Importantly, we observed high circular polarization reaching 66%. The results imply that the dominant mechanism of circularly polarized EL is robust against intervalley scattering, in marked contrast to the PL.

  2. Junction temperature measurement of light emitting diode by electroluminescence

    NASA Astrophysics Data System (ADS)

    He, S. M.; Luo, X. D.; Zhang, B.; Fu, L.; Cheng, L. W.; Wang, J. B.; Lu, W.

    2011-12-01

    Junction temperature (JT) is a key parameter of the performance and lifetime of light emitting diodes (LEDs). In this paper, a mobile instrument system has been developed for the non-contact measurement of JTs of LED under LabVIEW control. The electroluminescence (EL) peak shift of the LED is explored to measure the JT. Commercially available high power blue LEDs are measured. A linear relation between emission peak shift and JT is found. The accuracy of the JT is about 1 °C determined by the precision of the emission peak shift, ±0.03 nm, at 3σ standard deviation for blue LED. Using this system, on-line temperature rise curves of LED lamps are determined.

  3. Projection display systems based on the Digital Micromirror Device (DMD)

    NASA Astrophysics Data System (ADS)

    Younse, Jack M.

    1995-09-01

    The DMD is a semiconductor light switch which is making an impact in digital light processingTM (DLP) applications. It is the world's largest micro-electro-mechanical structures (MEMS) device with chips ranging from 442-thousand to 2.3 million moving mirrors. The DMD operates in a bistable (binary) mode and fully supports the movement to all-digital display systems. Currently, DMD devices are being used to develop a family of projection display products. An overview of digital light processing systems will be given with emphasis on the performance of the first prototypes using this technology, including their value propositions. Finally, the general markets served by this technology, along with the advantages DMD technology offers, will be discussed.

  4. Glycan-based diagnostic devices: current progress, challenges and perspectives.

    PubMed

    Wang, Sheng-Kai; Cheng, Chao-Min

    2015-12-01

    Diagnosis is an essential launching point for accurate medical treatment, and rapid and accurate diagnostic approaches have become the increasingly vital goal inspiring developments in a variety of analytical methods. With increasing attention in the area of glycosciences, the roles that carbohydrates play in many diseases have been elucidated, and the use of carbohydrates as disease biomarkers has become an emerging diagnostics strategy. This review article does not intend to comprehensively include all carbohydrate-related diagnostics studies. We do, however, wish to describe carbohydrate recognition and the design of sensitive detecting devices, especially those developed recently, so that readers might better grasp the principles behind such devices and relevant detection strategies, particularly those favoring inexpensive, rapid, and point-of-care (POC) approaches. PMID:26421872

  5. Enhanced spin signal in nonlocal devices based on a ferromagnetic CoFeAl alloy

    NASA Astrophysics Data System (ADS)

    Bridoux, G.; Costache, M. V.; Van de Vondel, J.; Neumann, I.; Valenzuela, S. O.

    2011-09-01

    We systematically study the nonlocal spin signal in lateral spin valves based on CoFeAl injectors and detectors and compare the results with identically fabricated devices based on CoFe. The devices are fabricated by electron beam evaporation at room temperature. We observe a > 10-fold enhancement of the spin signal in the CoFeAl devices. We explain this increase as due to the formation of a highly spin-polarized Co2FeAl Heusler compound with large resistivity. These results suggest that Heusler compounds are promising candidates as spin polarized electrodes in lateral spin devices for future spintronic applications.

  6. Photonic Device Design Based on BBO for Ultrafast Frequency Doubling

    NASA Astrophysics Data System (ADS)

    Huang, Jin-Zhe; Yang, Zhong-Ying; Zhang, Liu-Yang; Pu, Shao-Zhi; Su, Lin

    2014-11-01

    Group velocity mismatch becomes the main obstacle for frequency conversion of ultrashort pulses due to dispersion. To solve the problem, one design is proposed for group velocity compensated second harmonic generation in a periodically modulated BBO crystal structure: the α-BBO/β-BBO multi-layer microstructure. The results show that the device can be well applied from the visible red to the near infrared region.

  7. Novel electron devices based on the unique properties of diamond

    NASA Astrophysics Data System (ADS)

    Yoder, M. N.

    An account is given of the unique design principles that apply to such electron devices as metal-insulator-metal photodetectors, cascade and virtual-contact FETs, and high-electron-mobility transistors. It is noted that while diamond is a high-power, high-temperature, or extremely HF amplifier, it cannot accomplish all three functions simultaneously. Attention is given to the significance of diamond's heat-dissipation capabilities.

  8. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    NASA Astrophysics Data System (ADS)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  9. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

    PubMed

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-12-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges. PMID:27541816

  10. I. Electroluminescence from Hydrogen Uranyl Phosphate. I. Indium-Substituted Bismuth Copper Oxide Superconductors

    NASA Astrophysics Data System (ADS)

    Dieckmann, Gunnar Rudolph

    1990-01-01

    Chapter 1. A review of the general aspects of solid electrolytes is presented along with a summary of the electrical and optical properties of hydrogen uranyl phosphate (HUO_2PO_4 bullet4H_2O, HUP). A review of impedance spectroscopy, as it relates to the determination of ionic conductivities and dielectric constants of solid electrolytes is presented. The final section covers some aspects of gas plasma display devices. Chapter 2. Electroluminescence (EL) cells have been constructed with the ionically conducting solid HUP as the emissive medium. With ac excitation, both uranyl emission and molecular nitrogen plasma emission are observed, with the latter appearing to excite the former. Similar results were obtained with fully-substituted sodium (NaUP), magnesium (Mg_{0.5}UP), and pyridinium (pyHUP) derivatives of HUP. For all of these solids, the dependence of the EL intensity on sample thickness, ac frequency, and applied voltage has been determined. Impedance measurements permitted acquisition of dielectric constants and ionic conductivities for these solids, both of which decrease in the order HUP > NaUP > Mg_{0.5}UP > pyHUP. A model describing the dependence of EL intensity on cell parameters is presented. Chapter 3. The copper oxide superconductors can be structurally classified into five major families, represented by the compositions, (La,Sr)_2CuO _4, YBa_2Cu_3O_7, Pb_2Sr_2(Y,Ca)Cu_3O_8, (TIO)_{m}Ca_{n-1}Ba_2Cu _{n}O_{2n+2}, and Bi_2Sr_2(Ln_{1-x}Ce _{x})_2Cu_2O_{10+y }. All families are linked by a CuO _2 layer, which is crucial for superconductivity. The structural and chemical aspects of each family is covered with emphasis on the bismuth and thallium systems. The effects of substitution and oxygen annealing are also briefly considered. Chapter 4. The attempted substitution of indium into the rm Bi_2(Ca,Sr)_2CuO _6 and Bi_2(Ca,Sr) _3Cu_2O _8 systems is reported. Previously unreported side products, (Ca,Sr)In_2O _4 and Bi-Ca-Sr-O, viz., produced in the

  11. Light emitting ceramic device and method for fabricating the same

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  12. A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

    NASA Astrophysics Data System (ADS)

    Gao, Li-ping; Wei, Jian; Wang, Yue-chuan; Ding, Guo-jing; Yang, Yu-lin

    2012-08-01

    New optical writing and electrical erasing devices have been successfully fabricated that exploit the photochromism and electrochromism of viologen. In a preliminary study, both the structures of viologen and device were investigated in detail by UV-vis spectra in order to confirm their effects on the optical writing and electrical erasing performances of corresponding devices. For sandwiched, single and complementary devices based on benzyl viologen (BV 2+), only optical writing can be performed, not electrical erasing operations, which indicated these devices cannot realize optical information rewriting. For single and complementary devices based on styrene-functional viologen (V BV 2+) and acrylic-functional viologen (ACV 2+), optical writing and electrical erasing operations can be reversibly performed and optical information rewriting realized. It is clear that single devices based on V BV2+ and ACV2+ possess better performance accompanied with contrast without significant degradation and bleaching times and without significant deterioration over 10 repeated writing/erasing cycles. Furthermore, we put forward possible mechanisms for sandwiched, single and complementary devices based on V BV2+ and ACV2+ for the optical writing and electrical erasing operations. This study provides a new strategy to design optical writing and electrical erasing devices to realize optical information rewriting.

  13. Evidence of hot electron-induced chemical degradation in electroluminescence spectra of polyethylene

    SciTech Connect

    Teyssedre, Gilbert; Laurent, Christian

    2008-02-15

    Unlike semiconducting organics, insulating polymers exhibit electroluminescence features that cannot be interpreted on the basis of the photophysical properties of the material. In particular, it is shown for the first time that the spectral components observed in electroluminescence of polyethylene can only be reproduced when the material is irradiated by an electron beam. This shows that hot electron impact is a driving process in electroluminescence and that the excited states decay route goes along the chemical pathway ending with molecular fragmentation. From these results, electroluminescence and electrical degradation can be associated in an implicit scheme, opening the way for defining safety limits in terms of electric stresses applied to a material for a given application.

  14. Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

    SciTech Connect

    Ye, Yu; Ye, Ziliang; Gharghi, Majid; Zhu, Hanyu; Wang, Yuan; Zhao, Mervin; Yin, Xiaobo; Zhang, Xiang

    2014-05-12

    In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.

  15. Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

    SciTech Connect

    Huh, Chul Kim, Tae-Youb; Ahn, Chang-Geun; Kim, Bong Kyu

    2015-05-25

    We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.

  16. Designing Organic Phosphine Oxide Host Materials Using Heteroaromatic Building Blocks: Inductive Effects on Electroluminescence

    SciTech Connect

    Sapochak, Linda S.; Padmaperuma, Asanga B.; Vecchi, Paul A.; Cai, Xiuyu; Burrows, Paul E.

    2007-11-19

    Phosphine oxide substitution of small molecules with high triplet exciton energies allows development of vacuum sublimable, electron transporting host materials for blue OLEDs. Heteroaromatic building blocks (carbazole, dibenzofuran and dibenzothiophene) with ET ~ 3 eV were incorporated into phosphine oxide (PO) structures. External quantum efficiencies (EQEs) at lighting brightness (i.e., 800 cd/m2) reached as high as 9.8% at 5.2V for OLEDs using the heteroaromatic PO hosts doped with the sky blue phosphor, iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N,C2’) picolinate (FIrpic). Comparing device properties at a similar current density (i.e., J = 13 mA/cm2) showed the dibenzothiophene-bridged PO compound exhibits the highest EQEs and lowest operating voltages at all phosphor dopant levels. These results are explained with respect to the effects of the inductive phosphine oxide substituents on electrochemical, photophysical and electroluminescence properties of the substituted heteroaromatic building blocks.

  17. Ultrabroad Photoluminescence and Electroluminescence at New Wavelengths from Doped Organometal Halide Perovskites.

    PubMed

    Zhou, Yang; Yong, Zi-Jun; Zhang, Kai-Cheng; Liu, Bo-Mei; Wang, Zhao-Wei; Hou, Jing-Shan; Fang, Yong-Zheng; Zhou, Yi; Sun, Hong-Tao; Song, Bo

    2016-07-21

    Doping of semiconductors by introducing foreign atoms enables their widespread applications in microelectronics and optoelectronics. We show that this strategy can be applied to direct bandgap lead-halide perovskites, leading to the realization of ultrawide photoluminescence (PL) at new wavelengths enabled by doping bismuth (Bi) into lead-halide perovskites. Structural and photophysical characterization reveals that the PL stems from one class of Bi doping-induced optically active center, which is attributed to distorted [PbI6] units coupled with spatially localized bipolarons. Additionally, we find that compositional engineering of these semiconductors can be employed as an additional way to rationally tune the PL properties of doped perovskites. Finally, we accomplished the electroluminescence at cryogenic temperatures by using this system as an emissive layer, marking the first electrically driven devices using Bi-doped photonic materials. Our results suggest that low-cost, earth-abundant, solution-processable Bi-doped perovskite semiconductors could be promising candidate materials for developing optical sources operating at new wavelengths. PMID:27377481

  18. Analysis of electroluminescence images in small-area circular CdTe solar cells

    NASA Astrophysics Data System (ADS)

    Bokalič, Matevž; Raguse, John; Sites, James R.; Topič, Marko

    2013-09-01

    The electroluminescence (EL) imaging process of small area solar cells is investigated in detail to expose optical and electrical effects that influence image acquisition and corrupt the acquired image. An approach to correct the measured EL images and to extract the exact EL radiation as emitted from the photovoltaic device is presented. EL images of circular cadmium telluride (CdTe) solar cells are obtained under different conditions. The power-law relationship between forward injection current and EL emission and a negative temperature coefficient of EL radiation are observed. The distributed Simulation Program with Integrated Circuit Emphasis (SPICE®) model of the circular CdTe solar cell is used to simulate the dark J-V curve and current distribution under the conditions used during EL measurements. Simulation results are presented as circularly averaged EL intensity profiles, which clearly show that the ratio between resistive parameters determines the current distribution in thin-film solar cells. The exact resistance values for front and back contact layers and for CdTe bulk layer are determined at different temperatures, and a negative temperature coefficient for the CdTe bulk resistance is observed.

  19. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    SciTech Connect

    Lu, Y. F.; Cao, X. A.

    2014-11-17

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions.

  20. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    NASA Astrophysics Data System (ADS)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

    2014-05-01

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n--Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N+ region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.