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Sample records for electronic gap-driven metal-semiconductor

  1. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    PubMed Central

    Shakhvorostov, Dmitry; Nistor, Razvan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dimitri N.; Song, Young; Müser, Martin H.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class. PMID:19549858

  2. Photoinduced electron transfer from phycoerythrin to colloidal metal semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Kathiravan, A.; Chandramohan, M.; Renganathan, R.; Sekar, S.

    2009-04-01

    Phycoerythrin is a water soluble pigment which absorbs in the visible region at 563 nm. The interaction of phycoerythrin with colloidal metal semiconductors was studied by absorption, FT-IR and fluorescence spectroscopy. Phycoerythrin adsorbed strongly on the surface of TiO 2 nanoparticles, the apparent association constant for the association between colloidal metal-TiO 2 nanoparticles and phycoerythrin was determined from fluorescence quenching data. The free energy change (Δ Get) for electron transfer process has been calculated by applying Rehm-Weller equation.

  3. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Narayanamurti, V.

    2005-01-01

    We present a detailed description of a scheme to calculate the injection current for metal-semiconductor systems using tunnel-junction electron emission. We employ a Monte Carlo framework for integrating over initial free-electron states in a metallic emitter and use interfacial scattering at the metal-semiconductor interface as an independent parameter. These results have implications for modeling metal-base transistors and ballistic electron emission microscopy and spectroscopy.

  4. Localized Electron States Near a Metal-SemiconductorNanocontact

    SciTech Connect

    Demchenko, Denis O.; Wang, Lin-Wang

    2007-04-25

    The electronic structure of nanowires in contact withmetallic electrodes of experimentally relevant sizes is calculated byincorporating the electrostatic polarization potential into the atomisticsingle particle Schrodinger equation. We show that the presence of anelectrode produces localized electron/hole states near the electrode, aphenomenon only exhibited in nanostructures and overlooked in the past.This phenomenon will have profound implications on electron transport insuch nanosystems. We calculate several electrode/nanowire geometries,with varying contact depths and nanowire radii. We demonstrate the changein the band gap of up to 0.5 eV in 3 nm diameter CdSe nanowires andcalculate the magnitude of the applied electric field necessary toovercome the localization.

  5. Surface plasmon assisted hot electron collection in wafer-scale metallic-semiconductor photonic crystals.

    PubMed

    Chou, Jeffrey B; Li, Xin-Hao; Wang, Yu; Fenning, David P; Elfaer, Asmaa; Viegas, Jaime; Jouiad, Mustapha; Shao-Horn, Yang; Kim, Sang-Gook

    2016-09-01

    Plasmon assisted photoelectric hot electron collection in a metal-semiconductor junction can allow for sub-bandgap optical to electrical energy conversion. Here we report hot electron collection by wafer-scale Au/TiO2 metallic-semiconductor photonic crystals (MSPhC), with a broadband photoresponse below the bandgap of TiO2. Multiple absorption modes supported by the 2D nano-cavity structure of the MSPhC extend the photon-metal interaction time and fulfill a broadband light absorption. The surface plasmon absorption mode provides access to enhanced electric field oscillation and hot electron generation at the interface between Au and TiO2. A broadband sub-bandgap photoresponse centered at 590 nm was achieved due to surface plasmon absorption. Gold nanorods were deposited on the surface of MSPhC to study localized surface plasmon (LSP) mode absorption and subsequent injection to the TiO2 catalyst at different wavelengths. Applications of these results could lead to low-cost and robust photo-electrochemical applications such as more efficient solar water splitting. PMID:27607726

  6. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    PubMed

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation. PMID:27168177

  7. Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

    SciTech Connect

    Lin, Keng-Hua; Strachan, Alejandro

    2015-07-21

    Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to first couple to the phonons in the metal). We characterize the effect of the spatial e-ph coupling range on interface resistance by simulating heat transport through a metal-semiconductor interface to mimic the conditions of ultrafast laser heating experiments. Direct energy transfer from the conduction electrons to the semiconductor phonons not only decreases interfacial resistance but also increases the ballistic transport behavior in the semiconductor layer. These results provide new insight for experiments designed to characterize e-ph coupling and thermal transport at the metal-semiconductor/insulator interfaces.

  8. Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

    SciTech Connect

    Hegde, Ganesh Chris Bowen, R.

    2014-08-04

    The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding calculations. It is shown that the “ideal metal” assumption may fail in some situations and, consequently, underestimate the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called “valley filtering effect,” is shown to be sensitive to the details of the transverse boundary conditions for the unit cells used. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts.

  9. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Han, Jaeheon

    2011-12-01

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  10. Electron-phonon coupling and thermal conductance at a metal-semiconductor interface: First-principles analysis

    SciTech Connect

    Sadasivam, Sridhar; Fisher, Timothy S.; Waghmare, Umesh V.

    2015-04-07

    The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal)–silicon (semiconductor) interface to estimate the Schottky barrier height, and the strength of electron-phonon and phonon-phonon heat transfer across the interface. The electron and phonon dispersion relations of TiSi{sub 2} with C49 structure and the TiSi{sub 2}-Si interface are obtained using first-principles calculations within the density functional theory framework. These are used to estimate electron-phonon linewidths and the associated Eliashberg function that quantifies coupling. We show that the coupling strength of electrons with interfacial phonon modes is of the same order of magnitude as coupling of electrons to phonon modes in the bulk metal, and its contribution to electron-phonon interfacial conductance is comparable to the harmonic phonon-phonon conductance across the interface.

  11. Geometric and electronic structure of mixed metal-semiconductor clusters from global optimization.-

    NASA Astrophysics Data System (ADS)

    Hagelberg, Frank; Wu, Jianhua

    2006-03-01

    In addition to pure metal and semiconductor clusters, hybrid species that contain both types of constituents occur at the metal-semiconductor interface. Thus, clusters of the form Cu(x)Si(y) were detected by mass spectrometry [1]. In this contribution, the geometric and energetic features of Me(m)Si(7-m) (Me=Cu and Li) clusters are discussed. The choice of these systems is motivated by the structural similarity of the pure Si(7), Li(7), and Cu(7) systems which all stabilize in D(5h) symmetry. On the other hand, Li and Cu, representing the alkali group (IA) and the noble metal group (IB) of the periodic system, are expected to display strongly differing behavior when integrated into a Si(n) cluster, resulting in different ground state geometries for the cases Me = Li and Me = Cu. Addressing this problem by means of geometry optimization requires, in view of the large number of possible atomic permutations for Me(m)Si(7-m) with 0 < m < 7, the use of a global search algorithm. Equilibrium geometries are obtained by simulated annealing within the Nose' thermostat frame. It is observed that Cu(m)Si(7-m) clusters with m < 6 tend towards ground state geometries derived from the D(5h) prototype. For Li(m)Si(7-m), the Li(m) subsystem is found to adsorb on the framework of the Si(7-m) dianion. [1] J.J. Scherer, J.B. Pau, C.P. Collier, A. O'Keefe, and R.J. Saykally, J. Chem. Phys. 103, 9187 (1995).

  12. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application

    PubMed Central

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  13. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application.

    PubMed

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  14. Evidence of Momentum Conservation at a Nonepitaxial Metal/Semiconductor Interface Using Ballistic Electron Emission Microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.

    1996-01-01

    Ballistic-Electron-Emission Microscopy (BEEM) spectroscopy has been performed on Au/Si(111) structures as a function of Au thickness and temperature. At 77 K a direct signature of parallel momentum conservation at the Au/Si interface is observed in the BEEM spectra. The variation in spectral shape with both Au thickness and temperature places restrictions on allowable values of inelastic and elastic mean-free paths in the metal, and also requires the presence of multiple electron passes within the Au layer. An independent indication of multiple reflections is directly observed in the attenuation of BEEM current with Au thickness.

  15. Detection of Infrared Photons Using the Electronic Stress in Metal-Semiconductor Interfaces

    SciTech Connect

    Datskos, P.G.; Datskou, I.; Egert, C.M.; Rjic, S.

    1999-04-05

    It is well known that the work function of metals decreases when they are placed in a nonpolar liquid. A similar decrease occurs when the metal is placed into contact with a semiconductor forming a Schottky barrier. We report on a new method for detecting photons using the stress caused by photo-electrons emitted from a metal film surface in contact with a semiconductor microstructure. The photoelectrons diffuse into the microstructure and produce an electronic stress. The photon detection results from the measurement of the photo-induced bending of the microstructure. Internal photoemission has been used in the past to detect photons, however, in those cases the detection was accomplished by measuring the current due to photoelectrons and not due to electronic stress. Small changes in position (displacement) of microstructures are routinely measured in atomic force microscopy (AFM) where atomic imaging of surfaces relies on the measurement of small changes (< l0{sup -9} m) in the bending of microcantilevers. In the present work we studied the photon response of Si microcantilevers coated with a thin film of Pt. The Si microcantilevers were 500 nm thick and had a 30 nm layer of Pt. Photons with sufficient energies produce electrons from the platinum-silicon interface which diffuse into the Si and produce an electronic stress. Since the excess charge carriers cause the Si microcantilever to contract in length but not the Pt layer, the bimaterial microcantilever bends. In our present studies we used the optical detection technique to measure the photometric response of Pt-Si microcantilevers as a function of photon energy. The charge carriers responsible for the photo-induced stress in Si, were produced via internal photoemission using a diode laser with wavelength {lambda} = 1550 nm.

  16. Super-Resolution Mapping of Photogenerated Electron and Hole Separation in Single Metal-Semiconductor Nanocatalysts

    SciTech Connect

    Ha, Ji Won; Ruberu, T. Purnima A.; Han, Rui; Dong, Bin; Vela, Javier; Fang, Ning

    2014-01-12

    Metal–semiconductor heterostructures are promising visible light photocatalysts for many chemical reactions. Here, we use high-resolution superlocalization imaging to reveal the nature and photocatalytic properties of the surface reactive sites on single Au–CdS hybrid nanocatalysts. We experimentally reveal two distinct, incident energy-dependent charge separation mechanisms that result in completely opposite photogenerated reactive sites (e– and h+) and divergent energy flows on the hybrid nanocatalysts. We find that plasmon-induced hot electrons in Au are injected into the conduction band of the CdS semiconductor nanorod. The specifically designed Au-tipped CdS heterostructures with a unique geometry (two Au nanoparticles at both ends of each CdS nanorod) provide more convincing high-resolution single-turnover mapping results and clearly prove the two charge separation mechanisms. Engineering the direction of energy flow at the nanoscale can provide an efficient way to overcome important challenges in photocatalysis, such as controlling catalytic activity and selectivity. These results bear enormous potential impact on the development of better visible light photocatalysts for solar-to-chemical energy conversion.

  17. Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

    SciTech Connect

    Ren, F.; Lee, J.W.; Abernathy, C.R.; Pearton, S.J.; Constantine, C.; Barratt, C.; Shul, R.J.

    1997-07-01

    The effects of Ar plasma exposure on transconductance, channel sheet resistance, output resistance, and gate contact ideality factor of GaAs metal-semiconductor field-effect transistors (MESFETs) were investigated using two different high-density plasma sources, namely inductively coupled plasma and electron resonance plasma. Ion-induced damage is found to be reduced at moderate source powers ({approximately}200W) because of the reduction in cathode dc self-bias and hence ion energy, but at higher source powers the increase in ion flux produces significant deterioration of the device performance. Careful attention must be paid to both ion flux and ion energy in order to minimize ion-induced damage. Due to their relatively low channel doping levels, MESFETs are found to be more sensitive to plasma damage than devices with very heavily doped component layers such as heterojunction bipolar transistors. {copyright} {ital 1997 American Vacuum Society.}

  18. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

    PubMed Central

    Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

  19. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

    PubMed

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

  20. Anomalous tunneling in carbon/alkane/TiO(2)/gold molecular electronic junctions: energy level alignment at the metal/semiconductor interface.

    PubMed

    Yan, Haijun; McCreery, Richard L

    2009-02-01

    Carbon/TiO(2)/gold electronic junctions show slightly asymmetric electronic behavior, with higher current observed in current density (J)/voltage (V) curves when carbon is biased negative with respect to the gold top contact. When a approximately 1-nm-thick alkane film is deposited between the carbon and TiO(2), resulting in a carbon/alkane/TiO(2)/gold junction, the current increases significantly for negative bias and decreases for positive bias, thus creating a much less symmetric J/V response. Similar results were obtained when SiO(2) was substituted for the alkane layer, but Al(2)O(3) did not produce the effect. The observation that, by the addition of an insulating material between carbon and TiO(2), the junction becomes more conductive is unexpected and counterintuitive. Kelvin probe measurements revealed that while the apparent work function of the pyrolyzed photoresist film electrode is modulated by surface dipoles of different surface-bound molecular layers, the anomalous effect is independent of the direction of the surface dipole. We propose that by using a nanometer-thick film with a low dielectric constant as an insertion layer, most of the applied potential is dropped across this thin film, thus permitting alignment between the carbon Fermi level and the TiO(2) conduction band. Provided that the alkane layer is sufficiently thin, electrons can directly tunnel from carbon to the TiO(2) conduction band. Therefore, the electron injection barrier at the carbon/TiO(2) interface is effectively reduced by this energy-level alignment, resulting in an increased current when carbon is biased negative. The modulation of injection barriers by a low-kappa molecular layer should be generally applicable to a variety of materials used in micro- and nanoelectronic fabrication. PMID:20353235

  1. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

  2. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  3. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  4. Metal-semiconductor transition of graphene nanoribbons with different addends

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Dai, B.; Liu, J. S.; Yang, G. W.

    2012-02-01

    Using a LCAO method, which is based on spinless sp3 scheme, we have studied the electronic properties of graphene nanoribbons with zigzag edges (ZGNRs) terminated partially by methylene groups. Metal-semiconductor transition is proved when the H atoms at both sides of ZGNRs are partially substituted by methylene groups. Furthermore, when one-third of H atoms are substituted and the distribution of methylenes is symmetric, the band gap comes to about 0.59 eV, which is the widest energy gap in this work. Otherwise, when the addends at both sides are of asymmetric distribution, a band gap of only 0.21 eV is obtained. These results suggest that the addends at the edge of ZGNRs play an important role in modifying the electronic properties.

  5. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

  6. Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

    PubMed

    Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

    2012-08-28

    Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis. PMID:22792998

  7. Metal-semiconductor hybrid thin films in field-effect transistors

    SciTech Connect

    Okamura, Koshi Dehm, Simone; Hahn, Horst

    2013-12-16

    Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

  8. Metal Semiconductor Heterostructures for Photocatalytic Conversion of Light Energy.

    PubMed

    Dutta, Sumit Kumar; Mehetor, Shyamal Kumar; Pradhan, Narayan

    2015-03-19

    For fast separation of the photogenerated charge carriers, metal semiconductor heterostructures have emerged as one of the leading materials in recent years. Among these, metal Au coupled with low bandgap semiconductors remain as ideal materials where both can absorb the solar light in the visible region. It is also established that on excitation, the plasmonic state of gold interacts with excited state of semiconductor and helps for the delocalization of the photogenerated electrons. Focusing these materials where electron transfer preferably occurs from semiconductor to metal Au on excitation, in this Perspective, we report the latest developments in the synthetic chemistry in designing such nano heterostructures and discuss their photocatalytic activities in organic dye degradation/reduction and/or photocatalytic water splitting for generation of hydrogen. Among these, materials such as Au-CZTS, Au-SnS, Au-Bi2S3, Au-ZnSe, and so forth are emphasized, and their formation chemistry as well as their photocatalytic activities are discussed in this Perspective. PMID:26262849

  9. Fabrication and characterization of metal-semiconductor-metal nanorod using template synthesis

    SciTech Connect

    Kim, Kyohyeok; Kwon, Namyong; Hong, Junki; Chung, Ilsub

    2009-07-15

    The authors attempted to fabricate and characterize one dimensional metal-semiconductor-metal (MSM) nanorod using a template. Cadmium selenide (CdSe) and polypyrrole (Ppy) were chosen as n-type and p-type semiconductor materials, respectively, whereas Au was chosen as a metal electrode. The fabrication of the nanorod was achieved by ''template synthesis'' method using polycarbonate membrane. The structure of the fabricated nanorod was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In addition, the electrical properties of MSM nanorods were characterized using scanning probe microscopy (Seiko Instruments, SPA 300 HV) by probing with a conductive cantilever. I-V characteristics as a function of the temperature give the activation energy, as well as the barrier height of a metal-semiconductor contact, which is useful to understand the conduction mechanism of MSM nanorods.

  10. Nanoscale High-Speed Metal-Semiconductor Photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Mark Yue

    This thesis work studies the design, fabrication and characterization of nanoscale high-speed metal-semiconductor -metal (MSM) photodetectors. Smallest, fastest MSM photodetectors will be presented. Important design issues such as carrier transit time, carrier recombination time, light penetration depth, and device parasitic elements are investigated. Carrier transport in nanoscale detectors is studied using a Monte Carlo method. Based on the theoretical and experimental data, scaling rules for high-speed operation of MSM photodetectors are proposed. Nanoscale MSM photodetectors are fabricated using a custom-built ultra-high-resolution electron beam lithography system and a lift-off process. Different resist schemes and accurate dose control are essential to produce desired nanoscale structures. MSM photodetectors with finger spacing and width as small as 25 nm are fabricated on GaAs, Si and silicon-on-insulator (SOI) substrate. To our knowledge, they represent the smallest ever reported to date. Sub-picosecond characterization of the detectors' impulse response is performed using an electro-optic system and a femtosecond laser. The fastest MSM photodetectors have a response time and a 3-dB bandwidth of, respectively, 0.87 ps and 510 GHz on low-temperature-grown GaAs, 1.5 ps and 300 GHz on bulk GaAs, 3.7 ps and 110 GHz on bulk Si, and 3.2 ps and 140 GHz on SOI. They are, to the best of our knowledge, the fastest photodetectors of their kind. MSM photodetectors on GaAs and Si can also be used at 1.3 to 1.55 μm wavelength range, based on the internal emission of carriers at the metal-semiconductor interface. The performance of the GaAs and Si detector at 1.3 μm wavelength, including the dependence of responsivity on finger size, optical power, and applied bias, will be presented in this thesis. Finally, we will propose a new silicon Fabry-Perot planar waveguide modulator structure consisting of two Bragg mirrors, which are nanoscale trenches in the waveguide

  11. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    PubMed Central

    Lin, Jin-Han; Patil, Ranjit A.; Devan, Rupesh S.; Liu, Zhe-An; Wang, Yi-Ping; Ho, Ching-Hwa; Liou, Yung; Ma, Yuan-Ron

    2014-01-01

    We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (EF) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the EF to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters. PMID:25382186

  12. Practical anti-reflection coating for metal semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y.-C. M.; Stirn, R. J.

    1975-01-01

    The metal-semiconductor solar cell is a possible candidate for converting solar to electrical energy for terrestrial application. A method is given for obtaining optical parameters of practical antireflection coatings for the metal-semiconductor solar cell. This method utilizes the measured refractive index obtained from ellipsometry since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculation of optical parameters for Ta2O5 antireflection coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

  13. Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Yi, W.; Kaya, I. I.; Altfeder, I. B.; Appelbaum, I.; Chen, D. M.; Narayanamurti, V.

    2005-06-01

    Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au /GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.

  14. Fabrication of Metal-Semiconductor Heterostructures in Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Luyun

    The increasing demand for fossil fuels and the need to reduce greenhouse gases require clean energy sources and more efficient utilization of energy. Thermoelectric materials provide a means toward achieving these goals since they convert heat, including waste heat, directly into an electric potential difference. Metal-semiconductor heterostructures can work as Schottky barriers in thermoelectric materials to increase thermoelectric efficiency. In this project, nickel silicide phases were introduced into silicon nanowires (SiNWs) to build up the Schottky barrier. SiNW arrays were fabricated using a metal-assisted chemical process, creating SiNWs about 200 nm in diameter and 30im in length. Different methods were adopted for nickel deposition: electroless nickel deposition, electro nickel deposition, E-beam deposition, and thermal evaporation. The samples were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that depositing nickel on SiNWs in an aqueous solution without electricity is a simple way to deposit nickel particles, and the morphology of nickel particles depends on the concentration of the deposition bath. However, an aqueous solution will cause oxidation of the SiNWs and hinder the formation of nickel silicide. To solve this problem, depositing nickel on SiNWs in organic solutions inside an oxygen-free glove box is a way to prevent oxidation, and nickel can diffuse into silicon substrates easily via annealing when there no oxidation layer on the surface of SiNWs. The dominant phase formed in these samples is NiSi2 after being annealed at 650°C for one hour in a tube furnace.

  15. Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics

    SciTech Connect

    Urbanczyk, Adam; Otten, Frank W. M. van; Noetzel, Richard

    2011-06-13

    We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of such hybrid metal-semiconductor nanostructures reveal large enhancement of the emission intensity. Our concept of epitaxial self-alignment enables the integration of plasmonic functionality with electronic and photonic semiconductor devices operating down to the single QD level.

  16. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1994-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  17. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcadoo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1995-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  18. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  19. Interface Schottky barrier engineering via strain in metal-semiconductor composites.

    PubMed

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-21

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures. PMID:26511292

  20. One-dimensional transport in hybrid metal-semiconductor nanotube systems

    NASA Astrophysics Data System (ADS)

    Gelin, M. F.; Bondarev, I. V.

    2016-03-01

    We develop an electron transport theory for the hybrid system of a semiconducting carbon nanotube that encapsulates a one-atom-thick metallic wire. The theory predicts Fano resonances in electron transport through the system, whereby the interaction of electrons on the wire with nanotube plasmon generated near fields blocks some of the wire transmission channels to open up the new coherent plasmon-mediated channel in the nanotube forbidden gap outside the wire transmission band. Such a channel makes the entire hybrid system transparent in the energy domain where neither wire nor nanotube is individually transparent. This effect can be used to control and optimize charge transfer in hybrid nanodevices built on metal-semiconductor nanotube systems.

  1. New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

    NASA Technical Reports Server (NTRS)

    Towe, Elias

    1996-01-01

    A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

  2. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

    SciTech Connect

    Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

    2014-11-24

    Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.

  3. Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Sands, Timothy D.; Waghmare, Umesh V.

    2012-10-01

    Nitride-based metal/semiconductor superlattices are promising candidates for high-temperature thermoelectric applications. Motivated by recent experimental studies, we perform first-principles density functional theory based analysis of electronic structure, vibrational spectra and transport properties of HfN/ScN metal/semiconductor superlattices for their potential applications in thermoelectric and thermionic energy conversion devices. Our results suggest (a) an asymmetric linearly increasing density of states and (b) flattening of conduction bands along the cross-plane Γ-Z direction near the Fermi energy of these superlattices, as is desirable for a large power factor. The n-type Schottky barrier height of 0.13 eV at the metal/semiconductor interface is estimated by the microscopic averaging technique of the electrostatic potential. Vibrational spectra of these superlattices show softening of transverse acoustic phonon modes and localization of ScN phonons in the vibrational energy gap between the HfN (metal) and ScN (semiconductor) states. Our estimates of lattice thermal conductivity within the Boltzmann transport theory suggests up to two orders of magnitude reduction in the cross-plane lattice thermal conductivity of these superlattices compared to their individual bulk components.

  4. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

    NASA Astrophysics Data System (ADS)

    Stradi, Daniele; Martinez, Umberto; Blom, Anders; Brandbyge, Mads; Stokbro, Kurt

    2016-04-01

    Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and nonequilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I -Vbias curve simulations. We apply this method to characterize an Ag/Si interface relevant for photovoltaic applications and study the rectifying-to-Ohmic transition as a function of the semiconductor doping. We also demonstrate that the standard "activation energy" method for the analysis of I -Vbias data might be inaccurate for nonideal interfaces as it neglects electron tunneling, and that finite-size atomistic models have problems in describing these interfaces in the presence of doping due to a poor representation of space-charge effects. Conversely, the present method deals effectively with both issues, thus representing a valid alternative to conventional procedures for the accurate characterization of metal-semiconductor interfaces.

  5. (Hafnium zirconium) nitride/scandium nitride metal/semiconductor superlattices for thermionic energy conversion

    NASA Astrophysics Data System (ADS)

    Schroeder, Jeremy Leroy

    Nitride metal/semiconductor superlattices are a promising materials system for high temperature (>800K) thermionic energy conversion devices. This dissertation specifically investigates various properties of the (HfxZr 1-x)N/ScN metal/semiconductor materials system and introduces a novel approach for fabricating bulk-like thermoelectric devices. (HfxZr 1-x)N/ScN superlattices were deposited on magnesium oxide, sapphire, and silicon substrates by reactive DC magnetron sputtering and characterized by field emission scanning electron microscopy, high resolution x-ray diffraction, and transmission electron microscopy. Magnesium oxide and sapphire substrates produce epitaxial superlattice, whereas films deposited on silicon are characterized as textured-polycrystalline with superlattices within each grain. In addition to thin film characterization, a novel laminate approach was developed that allows for bulk-like devices to be fabricated from nanostructured superlattices, bridging the nano/micro divide. The laminate approach provides a means to simultaneously characterize all of the thermoelectric parameters, (Seebeck coefficient, electrical conductivity, thermal conductivity) of superlattices via a Z-meter characterization system and also provides a scalable process for industrial applications. Parasitic analysis of laminates revealed that low electrical contact resistivity contacts (<2·10-8 Ω-cm 2) are a critical factor for successful implementation of laminate metal/semiconductor superlattice devices. Electrical contact resistivity values for various contact schemes were characterized by the transfer length method, with values as low as 4·10-8 Ω-cm2 achieved. The high uncertainty in the characterization of contacts with low electrical contact resistivity is a challenging roadblock that can be partially overcome through careful design of the transfer length method pattern. Temperature dependent thermal conductivity analysis of HfN/ScN, (Hf 0.5Zr0.5)N/ScN, and Zr

  6. Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

    SciTech Connect

    Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar

    2015-09-15

    Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottky diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.

  7. Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Seo, Jung-Hun; Yu, Zongfu; Zhou, Weidong; Ma, Zhenqiang

    2016-08-01

    We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.

  8. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed. PMID:24753398

  9. Interface Schottky barrier engineering via strain in metal-semiconductor composites

    NASA Astrophysics Data System (ADS)

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-01

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

  10. Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

    SciTech Connect

    Fu Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Juergen

    2006-12-25

    FeS polycrystalline thin films were prepared on float glass at 500 deg. C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 deg. C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

  11. Multiple percolation tunneling staircase in metal-semiconductor nanoparticle composites

    SciTech Connect

    Mukherjee, Rupam; Huang, Zhi-Feng; Nadgorny, Boris

    2014-10-27

    Multiple percolation transitions are observed in a binary system of RuO{sub 2}-CaCu{sub 3}Ti{sub 4}O{sub 12} metal-semiconductor nanoparticle composites near percolation thresholds. Apart from a classical percolation transition, associated with the appearance of a continuous conductance path through RuO{sub 2} metal oxide nanoparticles, at least two additional tunneling percolation transitions are detected in this composite system. Such behavior is consistent with the recently emerged picture of a quantum conductivity staircase, which predicts several percolation tunneling thresholds in a system with a hierarchy of local tunneling conductance, due to various degrees of proximity of adjacent conducting particles distributed in an insulating matrix. Here, we investigate a different type of percolation tunneling staircase, associated with a more complex conductive and insulating particle microstructure of two types of non-spherical constituents. As tunneling is strongly temperature dependent, we use variable temperature measurements to emphasize the hierarchical nature of consecutive tunneling transitions. The critical exponents corresponding to specific tunneling percolation thresholds are found to be nonuniversal and temperature dependent.

  12. Growth and characterization of metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Henz, J.; Ospelt, M.; Von Känel, H.

    1989-04-01

    Thanks to recent advances in the growth of CoSi 2-layers on Si(111) it has become possible for the first time to fabricate metal/semiconductor superlattices. This is achieved by a combination of solid phase epitaxy (SPE) and molecular beam epitaxy (MBE). We briefly explain the growth of thin ( < 100 Å) type B oriented (i.e. rotated by 180° with respect to the substrate) CoSi 2 layers. We show the effect of the two different surface structures of CoSi 2 on the morphology of the films. Silicon with a reasonable crystal quality can be grown on top of CoSi 2 by using low substrate temperatures for the first few monolayers of growth. We always find the orientation of Si to be the same as the one of the underlying suicide, when the latter is of high quality. Superlattices of CoSi 2 and Si have two periods, one being given by the different materials and the other by the alternating crystal orientations. We show some TEM cross section images as well as first X-ray investigations of these structures.

  13. One-dimensional quantum transport in hybrid metal-semiconductor nanotube systems

    NASA Astrophysics Data System (ADS)

    Gelin, Maxim; Bondarev, Igor

    We study the inter-play between the intrinsic 1D conductance of metallic atomic wires (AWs) and plasmon mediated near-field effects for semiconducting single wall carbon nanotubes (CNs) that encapsulate AWs of finite length. We use the matrix Green's functions formalism to develop an electron transfer theory for such a hybrid quasi-1D metal-semiconductor nanotube system. The theory predicts Fano resonances in electron transmission through the system. That is the AW-CN near-field interaction blocks some of the pristine AW transmission band channels to open up new coherent channels in the CN forbidden gap outside the pristine AW transmission band. This makes the entire hybrid system transparent in the energy domain where neither of the individual pristine constituents, neither AW nor CN, are transparent. The effect can be used to control electron charge transfer in semiconducting CN based devices for nanoscale energy conversion, separation and storage. Nsf-ECCS-1306871 (M.G.), DOE-DE-SC0007117 (I.B.).

  14. Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition

    NASA Astrophysics Data System (ADS)

    Balsano, Robert; Durcan, Chris; Matsubayashi, Akitomo; Narasimham, Avyaya J.; LaBella, Vincent P.

    2016-03-01

    The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy by acquiring and fitting spectra every 11.7 nm × 11.7 nm over a 1 μm × 1 μm area. The SBH distributions for the mixed interfaces are about four times broader than the pure gold interface and have a complex structure arising from the incomplete intermixing and its effects on the scattering of hot electrons. The maps of the barrier heights and amplitudes for the mixed samples are inhomogeneous with localization attributed to the disordered mixture of the Au and Ag. A method to calculate ratio of the Au to Ag Schottky barrier heights is presented and discussed in relationship to the interface composition. These results demonstrate how the Schottky barrier height is a function of position at the interface, and how mapping can capture the electrostatic nature of these and possibly other mixed metal-semiconductor interfaces.

  15. Non-radiative relaxation and rectification behavior of metal/semiconductor tetrapod heterostructures

    SciTech Connect

    Kanta Haldar, Krishna; Kundu, Simanta; Patra, Amitava

    2014-02-10

    The metal-semiconductor hetero-structures have recently emerged as functional materials for their potential applications in the areas of photonic, optoelectronic, and other fields. Here, we discuss the structural characterization of Au/CdSe tetrapod hetero-structures by using high-resolution transmission electron microscope, high angle annular dark field-scanning transmission electron microscopic, and X-ray diffraction. The blue shifting of the plasmonic band and red shifting of the excitonic band suggest a strong surface plasmon-exciton interaction between Au and CdSe in Au/CdSe tetrapod heterostructure. A significant photoluminescence quenching (83.4%) of CdSe nanorod (NR) is observed in the presence of Au nanoparticle in Au/CdSe tetrapod heterostructure. The radiative and nonradiative decay rates of CdSe nanorods are found to be modified in Au/CdSe tetrapod structures and the nonradiative rate changes from 1.91 × 10{sup 7} s{sup −1} to 9.33 × 10{sup 9} s{sup −1} for CdSe NR to Au/CdSe tetrapod structure, respectively. Current-voltage characteristics of Au/CdSe heterostructure exhibit the rectification property with a threshold voltage of about 0.85 V and the rectifying ratio is 140 which can open up avenues for developing challenging devices.

  16. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE PAGESBeta

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

  17. Rare Earth Metal/semiconductor Interfaces and Compounds

    NASA Astrophysics Data System (ADS)

    Nogami, Jun

    Interfaces formed at room temperature by incremental deposition of rare earth metals onto semiconductor substrates have been studied with surface sensitive soft X-ray photoelectron spectroscopy. The trends in core level lineshape and intensity with increasing metal coverage have been used to deduce an outline of the evolution and the final morphology of the interfacial region on a microscopic scale. Measurements were taken for Ytterbium (Yb) on Silicon (Si), Germanium, and Gallium Arsenide, and for Gadolinium (Gd) and Europium (Eu) on Silicon. The Yb/Si interface work was supported by comparable measurements of bulk Yb silicide samples of known composition and crystal structure. In a general sense, the behavior of all the systems studied is similar. At very low metal coverages, the metal atoms chemisorb and are weakly bonded to the substrate. The 4f core levels indicate that the metal-metal atom coordination is relatively low at this stage. The interaction with the substrate strengthens with increasing coverage, culminating in the formation of a strongly reacted phase at between 1 and 3 monolayers (ML). The strong reaction is limited to a narrow region at room temperature. At less than 10 ML coverage, the surface of the sample is almost indistinguishable from the pure metal. Details of the behavior such as the reactivity at low coverage, the compounds formed at the interface, the morphology at the surface at intermediate coverages, the final interfacial width, and the amount of substrate atom outdiffusion and surface segregation can all vary from system to system. It is in explaining the causes of some of these differences that insight about what governs the behavior of all of these rare earth metal/semiconductor systems has been obtained. The divalent metals (Yb, Eu) are significantly less reactive than trivalent Gd at sub-monolayer coverages. For the divalent metals the formation of a metal-rich phase is strongly favored in the reaction at the interface, whereas

  18. Fabrication of Smooth Patterned Structures of Refractory Metals, Semiconductors, and Oxides via Template Stripping

    PubMed Central

    2013-01-01

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics. PMID:24001174

  19. Surface enhanced Raman spectroscopic studies of the metal-semiconductor interface in organic field effect transistors

    NASA Astrophysics Data System (ADS)

    Adil, Danish; Guha, Suchi

    2012-02-01

    The performance of organic field-effect transistors (FETs) largely depends on the nature of interfaces of dissimilar materials. Metal-semiconductor interfaces, in particular, play a critical role in the charge injection process. Here, Raman spectroscopy is used to investigate the nature of the Au-semiconductor interface in pentacene based FETs. A large enhancement in the Raman intensity (SERS) is observed from the pentacene film under the Au layer. The enhancement is evidence of a nano-scale roughness in the morphology of the interface, which is further confirmed by electron microscopy images. The morphology of the interface is investigated by SERS as a function of the pentacene layer thickness and the Au layer thickness. The Raman spectra are found to be extremely sensitive in detecting small changes in the morphology of the interface in the sub-nanometer range. Changes in the Raman spectra are further tracked after biasing and ageing the devices. Evolution of these Raman spectra is correlated with degradation in device performance. Finally, FETs based on other donor-acceptor semiconductors are probed by Raman scattering and contrasted with those of the pentacene-based devices.

  20. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

    NASA Astrophysics Data System (ADS)

    Patil, Ranjit A.; Wei, Mao-Kuo; Yeh, P.-H.; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-01

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes

  1. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  2. Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

    NASA Astrophysics Data System (ADS)

    Currie, Marc; Quaranta, Fabio; Cola, Adriano; Gallo, Eric M.; Nabet, Bahram

    2011-11-01

    Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8-22 μm pitch photodetectors have low (<1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs.

  3. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  4. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    PubMed Central

    Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai

    2016-01-01

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications. PMID:27152360

  5. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    DOE PAGESBeta

    Liu, Yuanyue; Stradins, Paul; Wei, Su -Huai

    2016-04-22

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanishmore » with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.« less

  6. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  7. Is DNA a metal, semiconductor or insulator? A theoretical approach

    NASA Astrophysics Data System (ADS)

    Rey-Gonzalez, Rafael; Fonseca-Romero, Karen; Plazas, Carlos; Grupo de Óptica e Información Cuántica Team

    Over the last years, scientific interest for designing and making low dimensional electronic devices with traditional or novel materials has been increased. These experimental and theoretical researches in electronic properties at molecular scale are looking for developing efficient devices able to carry out tasks which are currently done by silicon transistors and devices. Among the new materials DNA strands are highlighted, but the experimental results have been contradictories pointing to behaviors as conductor, semiconductor or insulator. To contribute to the understanding of the origin of the disparity of the measurements, we perform a numerical calculation of the electrical conductance of DNA segments, modeled as 1D disordered finite chains. The system is described into a Tight binding model with nearest neighbor interactions and a s orbital per site. Hydration effects are included as random variations of self-energies. The electronic current as a function of applied bias is calculated using Launder formalism, where the transmission probability is determined into the transfer matrix formalism. We find a conductor-to-semiconductor-to-insulator transition as a function of the three effects taken into account: chain size, intrinsic disorder, and hydration We thank Fundación para la Promoción de la Investigación y la Tecnología, Colombia, and Dirección de Investigación de Bogotá, Universidad Nacional de Colombia, for partial financial support.

  8. Reaction Current Phenomenon in Bifunctional Catalytic Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Hashemian, Mohammad Amin

    Energy transfer processes accompany every elementary step of catalytic chemical processes on material surface including molecular adsorption and dissociation on atoms, interactions between intermediates, and desorption of reaction products from the catalyst surface. Therefore, detailed understanding of these processes on the molecular level is of great fundamental and practical interest in energy-related applications of nanomaterials. Two main mechanisms of energy transfer from adsorbed particles to a surface are known: (i) adiabatic via excitation of quantized lattice vibrations (phonons) and (ii) non-adiabatic via electronic excitations (electron/hole pairs). Electronic excitations play a key role in nanocatalysis, and it was recently shown that they can be efficiently detected and studied using Schottky-type catalytic nanostructures in the form of measureable electrical currents (chemicurrents) in an external electrical circuit. These nanostructures typically contain an electrically continuous nanocathode layers made of a catalytic metal deposited on a semiconductor substrate. The goal of this research is to study the direct observations of hot electron currents (chemicurrents) in catalytic Schottky structures, using a continuous mesh-like Pt nanofilm grown onto a mesoporous TiO2 substrate. Such devices showed qualitatively different and more diverse signal properties, compared to the earlier devices using smooth substrates, which could only be explained on the basis of bifunctionality. In particular, it was necessary to suggest that different stages of the reaction are occurring on both phases of the catalytic structure. Analysis of the signal behavior also led to discovery of a formerly unknown (very slow) mode of the oxyhydrogen reaction on the Pt/TiO2(por) system occurring at room temperature. This slow mode was producing surprisingly large stationary chemicurrents in the range 10--50 microA/cm2. Results of the chemicurrent measurements for the bifunctional

  9. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence.

    PubMed

    Patil, Ranjit A; Wei, Mao-Kuo; Yeh, P-H; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-14

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs). PMID:26804935

  10. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  11. Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

    PubMed

    Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    2010-12-14

    Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics. PMID:20878625

  12. Simulation of Submicronmeter Metal-Semiconductor-Metal Ultraviolet Photodiodes no Gallium Nitride

    SciTech Connect

    Li, J.; Donaldson, W.R.; Hsiang, T.Y.

    2004-09-15

    Ultrafast metal Semiconductor metal ultraviolet photodetectors on GaN with 0.3-mm finger width and spacing were fabricated and packaged with a specially designed fast circuit. The assembly was simulated using a distributed circuit approach with optical illumination at l = 270 nm. This is the first theoretical simulation report of this effect in ultrafast ultraviolet photodetectors on GaN. Comparison of simulations and measurements was made in a wide range of optical energies, and a close agreement was achieved with a single energy-scaling factor.

  13. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process. PMID:27427689

  14. Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Kemal Okyay, Ali; Lee, Dongjin

    2015-12-01

    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

  15. Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Zhou, Dong; Lu, Hai; Chen, Dun-Jun; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Dou; Li, Liang

    2013-11-01

    Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibits low dark current of less than 1 pA under 30 V bias and a spectral cutoff around 260 nm, corresponding to the energy bandgap of Al0.5Ga0.5N. A peak photo-responsivity of 14.68 mA/W at 250 nm with a rejection ratio (250/360 nm) of more than four orders of magnitude is obtained under 30 V bias. For wavelength less than 170 nm, the photoresponsivity of the PD is found to increase as wavelength decreases, which is likely caused by the enhanced photoemission effect.

  16. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin

    2016-04-01

    Applying simulations and experiments, this paper systematically compares contact resistivities (ρc) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (Nd). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρc on semiconductors with low Nd, but this benefit diminishes gradually when Nd increases. With high Nd, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10-8 Ω cm2 ρc requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.

  17. Deep-subwavelength hybrid plasmonic waveguide with metal-semiconductor ribs for nanolaser applications

    NASA Astrophysics Data System (ADS)

    Li, Zhiquan; Piao, Ruiqi; Zhao, Jingjing; Meng, Xiaoyun; Li, Wenchao; Niu, Liyong; Gu, Erdan

    2015-12-01

    We propose a novel hybrid plasmonic waveguide with metal-semiconductor ribs. We investigated the modal properties of the proposed structure and the threshold property for plasmonic nanolaser applications by using the finite element method. The results reveal that the structure enables deep-subwavelength mode confinement with low propagation loss and low threshold. By optimizing the geometric parameters of the structure, the mode area can reach 0.000 29λ 2 with a threshold of 700.9/cm at the wavelength of 1.55 μm. Compared to the previously studied hybrid plasmonic waveguide, tighter mode confinement and lower propagation loss is simultaneously achieved for the structure with the same geometric parameters. The designed structure can be used as a low-threshold nanolaser and has promising potential for applications in active plasmonic systems and optoelectronic integrated circuits.

  18. Lossless propagation in metal-semiconductor-metal plasmonic waveguides using quantum dot active medium.

    PubMed

    Sheikhi, K; Granpayeh, N; Ahmadi, V; Pahlavan, S

    2015-04-01

    In this paper, we analyze and simulate the lossless propagation of lightwaves in the active metal-semiconductor-metal plasmonic waveguides (MSMPWs) at the wavelength range of 1540-1560 nm using a quantum dot (QD) active medium. The Maxwell's equations are solved in the waveguide, and the required gains for achieving lossless propagation are derived. On the other hand, the rate equations in quantum dot active regions are solved by using the Runge-Kutta method, and the achievable optical gain is derived. The analyses results show that the required optical gain for lossless propagation in MSMPWs is achievable using the QD active medium. Also, by adjusting the active medium parameters, the MSMPWs loss can be eliminated in a specific bandwidth, and the propagation length increases obviously. PMID:25967191

  19. High detectivity GaN metal semiconductor metal UV photodetectors with transparent tungsten electrodes

    NASA Astrophysics Data System (ADS)

    Wang, C. K.; Chang, S. J.; Su, Y. K.; Chiou, Y. Z.; Chang, C. S.; Lin, T. K.; Liu, H. L.; Tang, J. J.

    2005-06-01

    GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W-1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

  20. Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly.

    PubMed

    Nahar, Lamia; Esteves, Richard J Alan; Hafiz, Shopan; Özgür, Ümit; Arachchige, Indika U

    2015-10-27

    Hybrid nanomaterials composed of metal-semiconductor components exhibit unique properties in comparison to their individual counterparts, making them of great interest for optoelectronic applications. Theoretical and experimental studies suggest that interfacial interactions of individual components are of paramount importance to produce hybrid electronic states. The direct cross-linking of nanoparticles (NPs) via controlled removal of the surfactant ligands provides a route to tune interfacial interactions in a manner that has not been thoroughly investigated. Herein, we report the synthesis of CdSe/Ag heteronanostructures (aerogels) via oxidation induced self-assembly of thiol-coated NPs and the evolution of optical properties as a function of composition. Three hybrid systems were investigated, where the first and second excitonic energies of CdSe were matched with plasmonic energy of Au or Ag NPs and Ag hollow NPs. Physical characterization of the aerogels suggests the presence of an interconnected network of hexagonal CdSe and cubic Ag NPs. The optical properties of hybrids were systematically examined through UV-vis, photoluminescence (PL), and time-resolved (TR) PL spectroscopic studies that indicate the generation of alternate radiative decay pathways. A new emission (640 nm) from CdSe/Ag aerogels emerged at Ag loading as low as 0.27%, whereas absorption band tailing and PL quenching effects were observed at higher Ag and Au loading, respectively. The TRPL decay time of the new emission (∼600 ns) is markedly different from those of the band-edge (1.83 ± 0.03 ns) and trap-state (1190 ± 120 ns) emission maxima of phase pure CdSe, supporting the existence of alternate radiative relaxation pathways in sol-gel derived CdSe/Ag hybrids. PMID:26389642

  1. Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Kwon, Sangku; Lee, Seon Joo; Kim, Sun Mi; Lee, Youngkeun; Song, Hyunjoon; Park, Jeong Young

    2015-07-01

    The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 +/- 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface.The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 +/- 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02285a

  2. Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

    PubMed

    Yan, Fengpo; Wang, Yonghao; Zhang, Jiye; Lin, Zhang; Zheng, Jinsheng; Huang, Feng

    2014-01-01

    The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency. PMID:24458735

  3. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

    PubMed

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  4. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  5. Study of gain phenomenon in lateral metal-semiconductor-metal detectors for indirect conversion medical imaging

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, Shiva; Allec, Nicholas; Wang, Kai; Chen, Feng; Karim, Karim S.

    2011-03-01

    Previously, metal-semiconductor-metal (MSM) lateral amorphous selenium (a-Se) detectors have been proposed for indirect detector medical imaging applications. These detectors have raised interest due to their high-speed and photogain. The gain measured from these devices was assumed to have been photoconductive gain; however the origin of this gain was not fully understood. In addition, whether or not there was any presence of photocurrent multiplication gain was not investigated. For integration-type applications photocurrent multiplication gain is desirable since the total collected charge can be greater than the total number of absorbed photons. In order to fully appreciate the value of MSM devices and their benefit for different applications, whether it is counting or integration applications, we need to investigate the responsible mechanisms of the observed response. In this paper, we systematically study, through experimental and theoretical means, the nature of the photoresponse and its responsible mechanisms. This study also exposes the possible means to increase the performance of the device and under what conditions it will be most beneficial.

  6. Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

    NASA Astrophysics Data System (ADS)

    Ocak, Yusuf Selim; Gul Guven, Reyhan; Tombak, Ahmet; Kilicoglu, Tahsin; Guven, Kemal; Dogru, Mehmet

    2013-06-01

    A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78 eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58 eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100 mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65 eV band gap value obtained from optical method.

  7. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-09-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W-1 to 2480 and 2.43 × 1010 cmHz0.5W-1, respectively.

  8. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors.

    PubMed

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-01-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 10(10) cmHz(0.5)W(-1) to 2480 and 2.43 × 10(10) cmHz(0.5)W(-1), respectively. PMID:26324247

  9. Modeling electrochemical deposition inside nanotubes to obtain metal-semiconductor multiscale nanocables or conical nanopores.

    PubMed

    Lebedev, Konstantin; Mafé, Salvador; Stroeve, Pieter

    2005-08-01

    Nanocables with a radial metal-semiconductor heterostructure have recently been prepared by electrochemical deposition inside metal nanotubes. First, a bare nanoporous polycarbonate track-etched membrane is coated uniformly with a metal film by electroless deposition. The film forms a working electrode for further deposition of a semiconductor layer that grows radially inside the nanopore when the deposition rate is slow. We propose a new physical model for the nanocable synthesis and study the effects of the deposited species concentration, potential-dependent reaction rate, and nanopore dimensions on the electrochemical deposition. The problem involves both axial diffusion through the nanopore and radial transport to the nanopore surface, with a surface reaction rate that depends on the axial position and the time. This is so because the radial potential drop across the deposited semiconductor layer changes with the layer thickness through the nanopore. Since axially uniform nanocables are needed for most applications, we consider the relative role of reaction and axial diffusion rates on the deposition process. However, in those cases where partial, empty-core deposition should be desirable (e.g., for producing conical nanopores to be used in single nanoparticle detection), we give conditions where asymmetric geometries can be experimentally realized. PMID:16852830

  10. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  11. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Klein, P. B.; Binari, S. C.; Freitas, J. A.; Wickenden, A. E.

    2000-09-01

    Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm-2 and 6×1011 cm-2), suggesting that both traps contribute comparably to the observed current collapse.

  12. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  13. Fermi level dependent native defect formation: Consequences for metal--semiconductor and semiconductor--semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-07-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration.

  14. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  15. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  16. Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Koh, Yee Rui; Comparan, Jonathan; Sadasivam, Sridhar; Schroeder, Jeremy L.; Garbrecht, Magnus; Mohammed, Amr; Birch, Jens; Fisher, Timothy; Shakouri, Ali; Sands, Timothy D.

    2016-01-01

    Reduction of cross-plane thermal conductivity and understanding of the mechanisms of heat transport in nanostructured metal/semiconductor superlattices are crucial for their potential applications in thermoelectric and thermionic energy conversion devices, thermal management systems, and thermal barrier coatings. We have developed epitaxial (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices with periodicity ranging from 1 nm to 240 nm that show significantly lower thermal conductivity compared to the parent TiN/(Al,Sc)N superlattice system. The (Ti,W)N/(Al,Sc)N superlattices grow with [001] orientation on the MgO(001) substrates with well-defined coherent layers and are nominally single crystalline with low densities of extended defects. Cross-plane thermal conductivity (measured by time-domain thermoreflectance) decreases with an increase in the superlattice interface density in a manner that is consistent with incoherent phonon boundary scattering. Thermal conductivity values saturate at 1.7 W m-1K-1 for short superlattice periods possibly due to a delicate balance between long-wavelength coherent phonon modes and incoherent phonon scattering from heavy tungsten atomic sites and superlattice interfaces. First-principles density functional perturbation theory based calculations are performed to model the vibrational spectrum of the individual component materials, and transport models are used to explain the interface thermal conductance across the (Ti,W)N/(Al,Sc)N interfaces as a function of periodicity. The long-wavelength coherent phonon modes are expected to play a dominant role in the thermal transport properties of the short-period superlattices. Our analysis of the thermal transport properties of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices addresses fundamental questions about heat transport in multilayer materials.

  17. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tekcan, Burak; Ozgit-Akgun, Cagla; Bolat, Sami; Biyikli, Necmi; Okyay, Ali Kemal

    2014-10-01

    Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

  18. Dynamics of the formation of laser-induced periodic surface structures (LIPSS) upon femtosecond two-color double-pulse irradiation of metals, semiconductors, and dielectrics

    NASA Astrophysics Data System (ADS)

    Höhm, S.; Herzlieb, M.; Rosenfeld, A.; Krüger, J.; Bonse, J.

    2016-06-01

    In order to address the dynamics and physical mechanisms of LIPSS formation for three different classes of materials (metals, semiconductors, and dielectrics), two-color double-fs-pulse experiments were performed on Titanium, Silicon and Fused Silica. For that purpose a Mach-Zehnder interferometer generated polarization controlled (parallel or cross-polarized) double-pulse sequences at 400 nm and 800 nm wavelength, with inter-pulse delays up to a few picoseconds. Multiple of these two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample surfaces. The fluence of each individual pulse (400 nm and 800 nm) was always kept below its respective ablation threshold and only the joint action of both pulses lead to the formation of LIPSS. Their resulting characteristics (periods, areas) were analyzed by scanning electron microscopy. The periods along with the LIPSS orientation allow a clear identification of the pulse which dominates the energy coupling to the material. For strong absorbing materials (Silicon, Titanium), a wavelength-dependent plasmonic mechanism can explain the delay-dependence of the LIPSS. In contrast, for dielectrics (Fused Silica) the first pulse always dominates the energy deposition and LIPSS orientation, supporting a non-plasmonic formation scenario. For all materials, these two-color experiments confirm the importance of the ultrafast energy deposition stage for LIPSS formation.

  19. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  20. Laser annealing of laser assisted molecular beam deposited ZnO thin films with application to metal-semiconductor-metal photodetectors

    SciTech Connect

    Li Meiya; Anderson, Wayne; Chokshi, Nehal; De Leon, Robert L.; Tompa, Gary

    2006-09-01

    We report on the effect of postdeposition laser annealing of undoped zinc oxide (ZnO) thin films grown by laser assisted molecular beam deposition. Hall-effect measurements show that some undoped ZnO films change from n type with mobility values in the range of 200 cm{sup 2} V{sup -1} s{sup -1} to p-type material with mobility value of 73 cm{sup 2} V{sup -1} s{sup -1}, after laser annealing. The photoconductive behavior was clearly seen on the laser-annealed samples, with values of 0.28 m{omega}{sup -1}. The structural and optical properties of the films were improved with laser annealing as shown by scanning electron microscopy, x-ray photoelectron spectroscopy analysis, and photoluminescence measurement. All of the nonlaser and laser annealed samples showed near-band emission at {approx}3.3 eV. Metal-semiconductor-metal photodetectors were fabricated from the films.

  1. Formation of Metal-Semiconductor Interfaces on Mbe-Grown Gallium ARSENIDE(100): Surface Photovoltage, Chemistry and Band Bending

    NASA Astrophysics Data System (ADS)

    Mao, Duli

    1992-01-01

    found for all three interfaces, supporting the metal induced gap states (MIGS) model for Schottky barrier formation. The synchrotron radiation-induced surface photovoltage (SPV), which could invalidate the apparent band bending measured with PES, is studied as a function of metal coverage and temperature, using a Kelvin probe. A large (0.55eV) and quasi-permanent SPV is observed on lightly doped n -GaAs at LT. A non-negligible (0.2eV) SPV is also observed at room temperature. No SPV is detected on highly doped GaAs. The impact of this synchrotron radiation induced SPV on the photoemission study of metal-semiconductor interfaces is discussed.

  2. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage.

    PubMed

    Hwang, J D; Lin, G S

    2016-09-16

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage. PMID:27501372

  3. Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

    NASA Astrophysics Data System (ADS)

    Dang, Giang T.; Kawaharamura, Toshiyuki; Furuta, Mamoru; Saxena, Saurabh; Allen, Martin W.

    2015-10-01

    The stability of metal-semiconductor field-effect-transistors (MESFETs) with silver oxide Schottky gates on In-Ga-Zn-O (IGZO) channels, grown by mist chemical-vapor-deposition, was examined under different combinations of positive and negative bias, illumination, and temperature stress. These devices were remarkably stable, even under the most severe condition of negative-bias-illumination-temperature-stress (NBITS), where the threshold voltage shift after 10 h NBITS was only +0.12 V and was mainly attributed to a decrease in the carrier density of the channel. The stability of these IGZO MESFETs is associated with the use of a conducting Schottky gate that significantly reduces charge trapping at the gate-channel interface.

  4. GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Ju; Kang, Sang-Bum; Cha, Hyeon-Gu; Won, Chul-Ho; Hong, Seul-Ki; Cho, Byung-Jin; Park, Hongsik; Lee, Jung-Hee; Hahm, Sung-Ho

    2015-06-01

    We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

  5. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  6. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene. PMID:24407201

  7. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  8. A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control

    NASA Astrophysics Data System (ADS)

    Gačević, Ž.; López-Romero, D.; Juan Mangas, T.; Calleja, E.

    2016-01-01

    A uniformly n-type doped GaN:Si nanowire (NW), with a diameter of d = 90 nm and a length of 1.2 μm, is processed into a metal-semiconductor field effect transistor (MESFET) with a semi-cylindrical top Ti/Au Schottky gate. The FET is in a normally-ON mode, with the threshold at -0.7 V and transconductance of gm ˜ 2 μS (the transconductance normalized with NW diameter gm/d > 22 mS/mm). It enters the saturation mode at VDS ˜ 4.5 V, with the maximum measured drain current IDS = 5.0 μA and the current density exceeding JDS > 78 kA/cm2.

  9. De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements

    NASA Astrophysics Data System (ADS)

    Gu, Dazhen; Wallis, T. M.; Blanchard, P.; Lim, Sang-Hyun; Imtiaz, A.; Bertness, K. A.; Sanford, N. A.; Kabos, P.

    2011-05-01

    We present a de-embedding roadmap for extracting parasitic elements of a nanowire (NW) metal semiconductor field effect transistor (MESFET) from full two-port scattering-parameter measurements in 0.1-25 GHz range. The NW MESFET is integrated in a microwave coplanar waveguide structure. A conventional MESFET circuit model is modified to include capacitors of small value that is non-negligible in NW devices. We follow a step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data. This letter reflects a significant step toward full circuit modeling of NW MESFETs under normal operating conditions.

  10. Analysis of aluminum nano-gratings assisted light reflection reduction in GaAs metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Fan, Zhenzhu; Su, Yahui; Zhang, Huayong; Han, Xiaohu; Ren, Feifei

    2015-09-01

    Plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) with aluminum nano-gratings was proposed. A detailed numerical study of subwavelength nanogratings behavior to reduce the light reflection is performed by finite-difference time domain (FDTD) algorithm. The geometric parameters of nano-gratings, such as aperture width, the nano-gratings height, the duty cycles are optimized for subwavelength metal nanogratings on GaAs substrate and their impact on light reflection below the conventional MSM-PD is confirmed. Simulation results show that a light reflection factor around 15% can be obtained near the wavelength of 900 nm with optimized MSM-PDs, and in visible light spectrum, the Al nano-gratings show better performance than Au nano-gratings.

  11. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

    2016-09-01

    GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ∼33% at an applied bias of 15 V and an input power of 0.8 W m‑2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ∼97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

  12. Theoretical maximum efficiency of solar energy conversion in plasmonic metal-semiconductor heterojunctions.

    PubMed

    Cushing, Scott K; Bristow, Alan D; Wu, Nianqiang

    2015-11-28

    Plasmonics can enhance solar energy conversion in semiconductors by light trapping, hot electron transfer, and plasmon-induced resonance energy transfer (PIRET). The multifaceted response of the plasmon and multiple interaction pathways with the semiconductor makes optimization challenging, hindering design of efficient plasmonic architectures. Therefore, in this paper we use a density matrix model to capture the interplay between scattering, hot electrons, and dipole-dipole coupling through the plasmon's dephasing, including both the coherent and incoherent dynamics necessary for interactions on the plasmon's timescale. The model is extended to Shockley-Queisser limit calculations for both photovoltaics and solar-to-chemical conversion, revealing the optimal application of each enhancement mechanism based on plasmon energy, semiconductor energy, and plasmon dephasing. The results guide application of plasmonic solar-energy harvesting, showing which enhancement mechanism is most appropriate for a given semiconductor's weakness, and what nanostructures can achieve the maximum enhancement. PMID:26497739

  13. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices. PMID:26061530

  14. Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films

    NASA Astrophysics Data System (ADS)

    Xie, Yannan; Huang, Huolin; Yang, Weifeng; Wu, Zhengyun

    2011-01-01

    The titanium dioxide (TiO2) films prepared by sol-gel processing were used to fabricate metal-semiconductor-metal ultraviolet photodetectors. A very low dark current of 5.38 pA (current density of 3.84 nA/cm2) at 5 V bias is obtained, which is ascribed to the high effective Schottky barrier between Au and TiO2 films. The x-ray photoelectron spectroscopy analysis demonstrates that the concentration of oxygen vacancies is very low in the surface of the TiO2 films, which is responsible for the high effective Schottky barrier. The devices exhibit a cutoff wavelength at about 380 nm and a large UV-to-visible rejection ratio (340 versus 400 nm) of three orders of magnitude. The peak responsivity of the devices is 17.5 A/W at 5 V bias, indicating the presence of internal photoconductive gain induced by desorption of oxygen on the TiO2 surface.

  15. Surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings for single-lobe emission

    NASA Astrophysics Data System (ADS)

    Boyle, C.; Sigler, C.; Kirch, J. D.; Lindberg, D.; Earles, T.; Botez, D.; Mawst, L. J.

    2016-03-01

    Grating-coupled, surface-emitting (GCSE) quantum-cascade lasers (QCLs) are demonstrated with high-power, single-lobe surface emission. A 2nd-order Au-semiconductor distributed-feedback (DFB)/ distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric longitudinal mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. In turn, the antisymmetric longitudinal modes are strongly absorbed by the metal in the grating, causing the symmetric longitudinal mode to be favored to lase, which produces a single lobe beam over a grating duty-cycle range of 36-41 %. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of residual reflections from the device's cleaved ends. Peak pulsed output powers of ~ 0.4 W were measured with single-lobe, single-mode operation near 4.75 μm.

  16. Metal-Semiconductor Transition Concomitant with a Structural Transformation in Tetrahedrite Cu12Sb4S13

    NASA Astrophysics Data System (ADS)

    Tanaka, Hiromi I.; Suekuni, Koichiro; Umeo, Kazunori; Nagasaki, Toshiki; Sato, Hitoshi; Kutluk, Galif; Nishibori, Eiji; Kasai, Hidetaka; Takabatake, Toshiro

    2016-01-01

    The tetrahedrite Cu12Sb4S13 undergoes a metal-semiconductor transition (MST) at TMST = 85 K, whose mechanism remains elusive. Our Cu 2p X-ray photoemission spectroscopy study revealed the monovalent state of Cu ions occupying the two sites in this compound. This fact excludes the possibilities of previously proposed antiferromagnetic order and Jahn-Teller instability inherent in a divalent Cu system. A synchrotron X-ray diffraction study has revealed that the body-centered cubic cell of Cu12Sb4S13 transforms into a body-centered 2a × 2a × 2c tetragonal supercell below TMST, where the cell volume per formula unit expands by 0.25%. We have further studied pressure effects on the MST as well as the effects of the substitution of As for Sb. The application of pressure above 1 GPa completely inhibits the MST and leads to a metallic state, suggesting that the low-temperature structure with a larger volume becomes unstable under pressure. The As substitution also reduces the volume and suppresses the MST but the full substitution induces another transition at 124 K.

  17. A Comprehensive Study on Mo/CdTe Metal-Semiconductor Interface Deposited by Radio Frequency Magnetron Sputtering.

    PubMed

    Dhar, N; Khan, N A; Chelvanathan, P; Akhtaruzzaman, M; Alam, M M; Alothman, Z A; Sopian, K; Amin, N

    2015-11-01

    Metal-semiconductor (MS) junction between Mo and CdTe, which is one of the fundamental issues for CdTe based solar cell, has been investigated for films deposited on different substrates. XRD pattern of Mo/CdTe films on the polyimide (PI) substrate shows a strong preferential orientation of MoTe2 in (100) at 2θ = 29.44 degrees, which becomes less apparent as deposition time of CdTe increases. However, on soda lime glass (SLG) no such XRD reflection pattern is observed. Moreover, from EDX measurement, Mo-Te compound also identifies MoTe2 at Mo/CdTe interface on PI substrate, which is not present on SLG. Bulk carrier concentration of Mo/CdTe films on PI substrate for lower deposition time of CdTe is found 1.42 x 10(18) cm(-3), which is almost equal to MoTe2. Thereafter, it decreases as CdTe growth time increases. The type of unintentionally formed MoTe2 on PI substrate is found to be n-type in nature. Lattice constants of a = 6.5 Å for CdTe and a = 3.52 Å for MoTe2 are found from nanostructure study by TEM. PMID:26726685

  18. Plasmonic-exciton coupling in synthesized metal/semiconductor hybrid nanocomposites

    SciTech Connect

    Gadalla, A.; Hamad, D. A.; Mohamed, M. B.

    2015-12-31

    A new method has been developed to grow plasmonic semiconductor nanocomposites of Au/CdSe and Ag/CdSe. Their chemical composition and crystal structure are determined by X-ray diffraction. The collective optical properties of the prepared semiconductor nanohybrid have been measured using spectrophotometer techniques and compared to those of the individual components. The electron transfer processes from CdSe to the gold are faster than that of the silver. Au/CdSe has a strong plasmonic-excitonic coupling, but Ag/CdSe has a weak plasmonic-excitonic coupling.

  19. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

    PubMed Central

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φb) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

  20. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  1. Metal, Semiconductor, and Carbon Cluster Studies Including the Discovery and Characterization of Carbon -60: Buckminsterfullerene.

    NASA Astrophysics Data System (ADS)

    Heath, James Richard

    Experiments using the laser vaporization technique for production of metal clusters have been performed. The reactions of neutral metal clusters with various gases have been studied using a fast flow reactor. Dramatic reactivity variations were observed which depended on cluster size, metal, and reactant. A laser vaporization disc source has been developed for the study of semiconductor clusters. Some preliminary studies on neutral germanium and silicon clusters were performed. Their ionization potentials have been bracketed and the clusters were found to fragment by a fissioning process and to have long lived (100 nanoseconds) excited electronic states. A detailed study has been undertaken into carbon clusters. Laser synthesis of astrophysically important polyyne molecules such as H-C-(C-C)_{ rm 2n}-N has been done. Chains containing up to 22 carbon atoms are formed in a vaporized carbon and reactant gas plasma. A photophysically stable and chemically inert cluster, C_{60}, has been discovered and hypothesized to have the structure of a truncated icosahedron. All even clusters in the 60 atom size range were found to be inert to highly reactive gases, while odd clusters readily reacted. The results are consistent with a whole series (30-90 atoms) of closed cage-like structures. Closure of even clusters only is possible via the inclusion of twelve pentagons into a hexagonal network. Odd clusters show neither the photophysical nor chemical stability of the even clusters. A mechanism for the formation of spherical soot particles has been developed. Stable organometallic complexes of the formula C_{rm 2n}M (20 < n < 40 and M = La, Ba, Sr, Ca) have been laser synthesized. The dominant complex observed was C_{60}M ^+. These species are photophysically stable, chemically inert, and no C_{rm 2n}M_2^ecies were detected. The ultraviolet and visible absorption spectrum of C_{60} has been measured. Because excited electronic states are not expected to live long in a molecule

  2. Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

    PubMed

    Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

    2016-02-10

    We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices. PMID:26812264

  3. Growth of metal-semiconductor core-multishell nanorods with optimized field confinement and nonlinear enhancement

    NASA Astrophysics Data System (ADS)

    Nan, Fan; Xie, Fang-Ming; Liang, Shan; Ma, Liang; Yang, Da-Jie; Liu, Xiao-Li; Wang, Jia-Hong; Cheng, Zi-Qiang; Yu, Xue-Feng; Zhou, Li; Wang, Qu-Quan; Zeng, Jie

    2016-06-01

    This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities.This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09151a

  4. Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq; Broad, Nicholas; Senesky, Debbie G.

    2015-05-01

    Ultraviolet (UV) photodetectors are used for applications such as flame detection, space navigation, biomedical and environmental monitoring. Robust operation within large ranges of temperatures, radiation, salinity and/or corrosive chemicals require sensor materials with the ability to withstand and function reliably within these extreme harsh environments. For example, spacecraft can utilize a sun sensor (light-based sensor) to assist with determination of orientation and may be exposed to both ionizing radiation and extreme temperature swings during operation. Gallium nitride (GaN), a wide bandgap semiconductor material, has material properties enabling visible-blindness, tunable cutoff wavelength selection based on ternary alloy mole fraction, high current density, thermal/chemical stability and high radiation tolerance due to the strength of the chemical bond. Graphene, with outstanding electrical, optical and mechanical properties and a flat absorption spectrum from 300 to 2,500 nm, has potential use as a transparent conductor for GaN-based metal-semiconductor-metal (MSM) photodetectors. Here, graphene-enhanced MSM UV photodetectors are fabricated with transparent and conductive graphene interdigitated electrodes on thin film GaN-on-sapphire substrates serving as back-to-back Schottky contacts. We report on the irradiation response of graphene/GaN-based MSM UV photodetectors up to 750 krad total ionizing dose (TID) then tested under dark and UV light (365 nm) conditions. In addition, based on current-voltage measurements from 75 krad to 750 krad TID, calculated photodetector responsivity values change slightly by 25% and 11% at -5 V and -2 V, respectively. These initial findings suggest that graphene/GaN MSM UV photodetectors could potentially be engineered to reliably operate within radiation environments.

  5. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Chakrabarti, Sudipto; Pal, Amlan J.

    2015-05-01

    , reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse. Electronic supplementary information (ESI) available: Additional figures. See DOI: 10.1039/c5nr01161b

  6. Enhanced electrical transparency by ultra-thin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

    SciTech Connect

    Yajima, Takeaki; Minohara, Makoto; Bell, Christopher; Kumigashira, Hiroshi; Oshima, Masaharu; Hwang, Harold Y.; Hikita, Yasuyuki

    2015-02-05

    We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

  7. Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin

    2014-01-01

    A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal-semiconductor-metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10-11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

  8. Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy.

    PubMed

    Kwon, Sangku; Lee, Seon Joo; Kim, Sun Mi; Lee, Youngkeun; Song, Hyunjoon; Park, Jeong Young

    2015-08-01

    The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 ± 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface. PMID:26136054

  9. Contact resistivity decrease at a metal/semiconductor interface by a solid-to-liquid phase transitional metallo-organic silver.

    PubMed

    Shin, Dong-Youn; Seo, Jun-Young; Kang, Min Gu; Song, Hee-eun

    2014-09-24

    We present a new approach to ensure the low contact resistivity of a silver paste at a metal/semiconductor interface over a broad range of peak firing temperatures by using a solid-to-liquid phase transitional metallo-organic silver, that is, silver neodecanoate. Silver nanoclusters, thermally derived from silver neodecanoate, are readily dissolved into the melt of metal oxide glass frit even at low temperatures, at which point the molten metal oxide glass frit lacks the dissociation capability of bulk silver into Ag(+) ions. In the presence of O(2-) ions in the melt of metal oxide glass frit, the redox reaction from Ag(+) to Ag(0) augments the noble-metal-assisted etching capability to remove the passivation layer of silicon nitride. Moreover, during the cooling stage, the nucleated silver atoms enrich the content of silver nanocolloids in the solidified metal oxide glass layer. The resulting contact resistivity of silver paste with silver neodecanoate at the metal/semiconductor interface thus remains low-between 4.12 and 16.08 mΩ cm(2)-whereas without silver neodecanoate, the paste exhibits a contact resistivity between 2.61 and 72.38 mΩ cm(2) in the range of peak firing temperatures from 750 to 810 °C. The advantage of using silver neodecanoate in silver paste becomes evident in that contact resistivity remains low over the broad range of peak firing temperatures, thus providing greater flexibility with respect to the firing temperature required in silicon solar cell applications. PMID:25182502

  10. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    PubMed

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-01

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures. PMID:26479951

  11. Stone-Wales defects can cause a metal-semiconductor transition in carbon nanotubes depending on their orientation.

    PubMed

    Partovi-Azar, P; Namiranian, A

    2012-01-25

    It has been shown that the two different orientations of Stone-Wales (SW) defects, i.e. longitudinal and circumferential SW defects, on carbon nanotubes (CNTs) result in two different electronic structures. Based on density functional theory we have shown that the longitudinal SW defects do not open a bandgap near the Fermi energy, while a relatively small bandgap emerges in tubes with circumferential defects. We argue that the bandgap opening in the presence of circumferential SW defects is a consequence of long-range symmetry breaking which can spread all the way along the tube. Specifically, the distribution of contracted and stretched bond lengths due to the presence of defects, and hopping energies for low-energy electrons, i.e. the 2p(z) electrons, show two different patterns for the two types of defects. Interplay between the geometric features and the electronic properties of the tubes have also been studied for different defect concentrations. Considering π-orbital charge density, it has also been shown that the deviations of bond lengths from their relaxed length result in different doping for two defect orientations around the defects-electron-rich for a circumferential defect and hole-rich for a longitudinal one. We have also shown that, in the tubes having both types of defects, circumferential defects would dominate and impose their electronic properties. PMID:22156012

  12. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  13. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  14. Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO2 Passivation.

    PubMed

    Lee, Soo Hyun; Kim, Sang Hun; Yu, Jae Su

    2016-12-01

    Metal-semiconductor-metal near-ultraviolet (NUV) photodetectors (PDs) based on zinc oxide (ZnO) nanorods (NRs), operating at λ ~ 380 nm, were fabricated using conventional photolithography and hydrothermal synthesis processes. The vertically aligned ZnO NRs were selectively grown in the channel area of PDs. The performance of ZnO NR-based NUV PDs was optimized by varying the solution concentration and active channel width (W ch). For the fabricated samples, their electrical and photoresponse properties were investigated under the dark state and the illumination at wavelength of ~380 nm, respectively. For the device (W ch = 30 μm) with ZnO NRs at 25 mM, the highest photocurrent of 0.63 mA was obtained with the on/off ratio of 1720 at the bias of 5 V. The silicon dioxide passivation was also carried out to improve the photoresponse properties of PDs. The passivated devices exhibited faster rise and reset times rather than those of the unpassivated devices. PMID:27422775

  15. High-performance AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Xu, Jin; Ye, Wei; Li, Yang; Qi, Zhiqiang; Dai, Jiangnan; Wu, Zhihao; Chen, Changqing; Yin, Jun; Li, Jing; Jiang, Hao; Fang, Yanyan

    2015-01-01

    AlGaN-based solar-blind ultraviolet photodetectors have attractive potential applications in the fields of missile plume detection, biochemical sensing, solar astronomy, etc. In this work, significant deep ultraviolet detection enhancement is demonstrated on AlGaN-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetectors by introducing the coupling of localized surface plasmon from Al nanoparticles with the high-Al-content AlGaN epilayer. The size-controlled Al nanoparticle arrays fabricated by nanosphere lithography can not only reduce the detectors' dark current but also bring about greatly enhanced responsivity. The peak responsivity of AlGaN-based MSM solar-blind ultraviolet photodetectors with Al nanoparticles can reach 2.34 A/W at 269 nm under 20 V bias, enhanced more than 25 times than that without Al nanoparticles. Our approach shows an efficient fabrication technique of high-performance and low-cost plasmonic enhanced AlGaN solar-blind MSM ultraviolet photodetectors.

  16. Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

    NASA Astrophysics Data System (ADS)

    Adjaye, J.; Mazzola, M. S.

    4H-SiC n-channel power metal semiconductor field-effect transistors (MESFETs) with nitrogen n+-implanted source/drain ohmic contact regions, with and without p-buffer layer fabricated on semi-insulating substrates exhibited hysteresis in the drain I-V characteristics of both types of devices at 300 K and 480 K due to traps. However, thermal spectroscopic measurements could detect the traps only in the devices without p-buffer. Device simulation and optical admittance spectroscopy (OAS) are used to resolve the discrepancy in the initial experimental characterization results. Device simulations and OAS suggest that, in addition to the semi-insulating (SI) substrate traps, acceptor traps due to source/drain residual implant lattice damage contribute to the hysteresis observed in the drain I-V characteristics of the devices. Simulations suggest these traps are contained in the lateral straggle of the implanted source and drain regions since the drain current largely flows between the un-gated edges of the source and drain through the volume of lateral straggle traps. Since hysteresis in I-V curves is a manifestation of the presence of defects in devices and since defects degrade carrier mobility and hence device performance, efforts should be made to minimize the source/drain lateral straggle implant damage.

  17. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Miura, Makoto; Noguchi, Masataka; Okamoto, Daisuke; Horikawa, Tsuyoshi; Arakawa, Yasuhiko

    2013-04-01

    We studied Si waveguide-integrated metal-semiconductor-metal (MSM) and p-i-n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying a 8-20 nm Si-capping layer, and a very low dark current density of approximately 0.4 nA/µm2 was achieved with a high responsivity of 0.8 A/W. In addition, a small electrode spacing of 1 µm realized high-speed photodetection of 20 Gbps. As for a p-i-n-type Ge-PD, by applying a 10-20 nm Si capping layer, the contact resistance between a metal electrode of Ti/TiN/Al and n+-Si capping layer was successfully reduced to 1×10-5 Ω.cm2. A 45 GHz bandwidth was obtained with a low dark current density of 0.8 nA/µm2. Moreover, a more than 20 GHz bandwidth was achieved with zero-bias voltage. In the case of zero-bias voltage operation, a 3 dB bandwidth was a little affected by input power, which would originate from the photocarrier screening effect on the built-in electric field.

  18. Collective excitation of plasmonic hot-spots for enhanced hot charge carrier transfer in metal/semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Piot, Adrien; Earl, Stuart K.; Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J.; Gómez, Daniel E.

    2015-04-01

    We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers.We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers. Electronic supplementary information (ESI) available: Detailed information on estimates of hot-electron injection efficiencies, electrodynamic simulations, sample preparation, spectroscopic and structural characterization and photocatalytic experiments. See DOI: 10.1039/c5nr01592h

  19. Discovery of surfactants for metal/semiconductor separation of single-wall carbon nanotubes via high-throughput screening.

    PubMed

    Tanaka, Takeshi; Urabe, Yasuko; Nishide, Daisuke; Kataura, Hiromichi

    2011-11-01

    We report novel surfactants that can be used for the separation of metallic (M) and semiconducting (S) single-wall carbon nanotubes (SWCNTs). Among the M/S separation methods using surfactants in an aqueous solution, sodium dodecyl sulfate plays a key role in density gradient ultracentrifugation (DGU) and agarose gel separations. In this study, we screened 100 surfactants for M/S separation using a high-throughput screening system. We identified five surfactants, which could be used for both DGU and agarose gel separations, suggesting that the basic principle of these separations is common. These surfactants have relatively low dispersibilities, which is likely due to their common structural features, i.e., straight alkyl tails and charged head groups, and appeared to enable M- and S-SWCNTs to be distinguished and separated. These surfactants should stimulate research in this field and extend the application of electrically homogeneous SWCNTs not only for electronics but also for biology and medicine. PMID:21980975

  20. Characterization of the metal-semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

    NASA Astrophysics Data System (ADS)

    Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

    2015-06-01

    Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These applications have demanding energy and spatial resolution requirements that are not always met by the metal contacts deposited on the CdZnTe. To improve the contacts, the interface formed between metal and semiconductor during contact deposition must be better understood. Gold has a work function closely matching that of high resistivity CdZnTe and is a popular choice of contact metal. Gold contacts are often formed by electroless deposition however this forms a complex interface. The prior CdZnTe surface preparation, such as mechanical or chemo-mechanical polishing, and electroless deposition parameters, such as gold chloride solution temperature, play important roles in the formation of the interface and are the subject of the presented work. Techniques such as focused ion beam (FIB) cross section imaging, transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and current  -  voltage (I-V) analysis have been used to characterize the interface. It has been found that the electroless reaction depends on the surface preparation and for chemo-mechanically polished (1 1 1) CdZnTe, it also depends on the A/B face identity. Where the deposition occurred at elevated temperature, the deposited contacts were found to produce a greater leakage current and suffered from increased subsurface voiding due to the formation of cadmium chloride.

  1. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

    PubMed

    Lee, Hee Sung; Baik, Seung Su; Lee, Kimoon; Min, Sung-Wook; Jeon, Pyo Jin; Kim, Jin Sung; Choi, Kyujin; Choi, Hyoung Joon; Kim, Jae Hoon; Im, Seongil

    2015-08-25

    Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results. PMID:26169189

  2. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal-Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

    NASA Astrophysics Data System (ADS)

    Meng, C. C.; Su, J. Y.; Yang, S. M.

    2005-09-01

    The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter Cgs while gate contour affects Cgd. The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

  3. Effects of variations in precursor concentration on the growth of rutile TiO2 nanorods on Si substrate with fabricated fast-response metal-semiconductor-metal UV detector

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-06-01

    This study aimed to investigate the effects of variations in precursor concentration (TiCl3 solution) on the structural, morphological, and optical properties of rutile titanium dioxide (TiO2) nanorods and fabricated metal-semiconductor-metal UV detector depending on the optimal sample. The nanorods were prepared from an aqueous solution of titanium (III) chloride (TiCl3) on p-type, (1 1 1)-oriented Si substrates at different concentrations of TiCl3 solutions (2, 3, 4, and 5 mM). The experimental results showed that the TiO2 nanorods grown at 4 mM concentration exhibited optimal structural properties. A fast-response metal-semiconductor-metal UV detector was fabricated by depositing Pt contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias voltage, the device showed 44.4 sensitivity. In addition, the internal gain was 1.45, and the photoresponse peak was 70 mA/W. The response and the recovery times were calculated to be 7.8 ms upon illumination to a pulse UV light (365 nm) at 5 V bias voltage.

  4. Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers

    PubMed Central

    Lee, Young Keun; Lee, Hyosun; Park, Jeong Young

    2014-01-01

    We demonstrate a tandem-structured, hot electron based photovoltaic cell with double Schottky barriers. The tandem-structured, hot electron based photovoltaic cell is composed of two metal/semiconductor interfaces. Two types of tandem cells were fabricated using TiO2/Au/Si and TiO2/Au/TiO2, and photocurrent enhancement was detected. The double Schottky barriers lead to an additional pathway for harvesting hot electrons, which is enhanced through multiple reflections between the two barriers with different energy ranges. In addition, light absorption is improved by the band-to-band excitation of both semiconductors with different band gaps. Short-circuit current and energy conversion efficiency of the tandem-structured TiO2/Au/Si increased by 86% and 70%, respectively, compared with Au/Si metal/semiconductor nanodiodes, showing an overall solar energy conversion efficiency of 5.3%. PMID:24694838

  5. Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Milliken, A. M.; Manion, S. J.; Kaiser, W. J.; Bell, L. D.; Hecht, M. H.

    1992-01-01

    Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

  6. Electronic polymers in lipid membranes

    PubMed Central

    Johansson, Patrik K.; Jullesson, David; Elfwing, Anders; Liin, Sara I.; Musumeci, Chiara; Zeglio, Erica; Elinder, Fredrik; Solin, Niclas; Inganäs, Olle

    2015-01-01

    Electrical interfaces between biological cells and man-made electrical devices exist in many forms, but it remains a challenge to bridge the different mechanical and chemical environments of electronic conductors (metals, semiconductors) and biosystems. Here we demonstrate soft electrical interfaces, by integrating the metallic polymer PEDOT-S into lipid membranes. By preparing complexes between alkyl-ammonium salts and PEDOT-S we were able to integrate PEDOT-S into both liposomes and in lipid bilayers on solid surfaces. This is a step towards efficient electronic conduction within lipid membranes. We also demonstrate that the PEDOT-S@alkyl-ammonium:lipid hybrid structures created in this work affect ion channels in the membrane of Xenopus oocytes, which shows the possibility to access and control cell membrane structures with conductive polyelectrolytes. PMID:26059023

  7. A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

    NASA Technical Reports Server (NTRS)

    Savich, Gregory R.; Simons, Rainee N.

    2006-01-01

    Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

  8. Metal-semiconductor-transition observed in Bi{sub 2}Ca(Sr, Ba){sub 2}Co{sub 2}O{sub 8+δ} single crystals

    SciTech Connect

    Dong, Song-Tao; Zhang, Bin-Bin; Zhang, Lun-Yong; Yao, Shu-Hua E-mail: shyao@nju.edu.cn; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng; Chen, Y. B. E-mail: shyao@nju.edu.cn

    2014-07-28

    Electrical property evolution of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} single crystals (AE = Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+δ} and Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} demonstrates semiconductor-like properties. But Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} to semiconductor-like Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} can be attributed to Anderson localization. However the semiconductor behaviour of Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} and Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+δ} is related to electronic correlations effect that is inferred by large negative magnetoresistance (∼70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} compared with other two compounds. It suggests that Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} is more apt to be metal in this material system.

  9. Visible-light photodecomposition of acetaldehyde by TiO2-coated gold nanocages: plasmon-mediated hot electron transport via defect states.

    PubMed

    Kodiyath, Rajesh; Manikandan, Maidhily; Liu, Lequan; Ramesh, Gubbala V; Koyasu, Satoshi; Miyauchi, Masahiro; Sakuma, Yoshiki; Tanabe, Toyokazu; Gunji, Takao; Duy Dao, Thang; Ueda, Shigenori; Nagao, Tadaaki; Ye, Jinhua; Abe, Hideki

    2014-12-21

    Skeletal gold nanocages (Au NCs) are synthesized and coated with TiO2 layers (TiO2-Au NCs). The TiO2-Au NCs exhibit enhanced photodecomposition activity toward acetaldehyde under visible light (>400 nm) illumination because hot electrons are generated over the Au NCs by local surface plasmon resonance (LSPR) and efficiently transported across the metal/semiconductor interface via the defect states of TiO2. PMID:25357137

  10. Hot Electron Transport Properties of Thin Copper Films Using Ballistic Electron Emission Microscopy

    NASA Astrophysics Data System (ADS)

    Garramone, J. J.; Abel, J. R.; Sitnitsky, I. L.; Zhao, L.; Appelbaum, I.; Labella, V. P.

    2009-03-01

    Copper is widely used material for electrical interconnects within integrated circuits and recently as a base layer for hot electron spin injection and readout into silicon. Integral to both their applications is the knowledge of the electron scattering length. To the best of our knowledge, little work exists that directly measures the scattering length of electrons in copper. In this study we used ballistic electron emission microscopy (BEEM) to measure the hot electron attenuation length of copper thin films deposited on Si(001). BEEM is a three terminal scanning tunneling microcopy (STM) based technique that can measure transport and Schottky heights of metal/semiconductor systems. We find a Schottky height of 0.67 eV and an attenuation length approaching 40 nm just above the Schottky height at 77 K. We also measure a decrease in the attenuation length with increasing tip bias to determine the relative roles of inelastic and elastic scattering.

  11. Tight-binding approach to strain-dependent DNA electronics

    NASA Astrophysics Data System (ADS)

    Malakooti, Sadeq; Hedin, Eric; Joe, Yong

    2013-07-01

    Small mechanical strain perturbations are considered in calculations of the poly(G)-poly(C) DNA molecular electronic structure, using a tight-binding framework in conjunction with the theories of Slater-Koster and linear elasticity. Results reveal a strain-induced band gap for DNA which is linearly dependent on the induced strain. Local density of states calculations expose that the contribution of the guanine-cytosine base pairs in the charge transport mechanism is significantly enhanced relative to the backbones when DNA is compressed. Transport investigations also disclose a strain-induced metal-semiconductor transition for the DNA molecule, which suggests possible potential uses for sensing applications.

  12. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  13. Nanoscale heat transport via electrons and phonons by molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Lin, Keng-Hua

    Nanoscale heat transport has become a crucial research topic due to the growing importance of nanotechnology for manufacturing, energy conversion, medicine and electronics. Thermal transport properties at the nanoscale are distinct from the macroscopic ones since the sizes of nanoscale features, such as free surfaces and interfaces, are comparable to the wavelengths and mean free paths of the heat carriers (electrons and phonons), and lead to changes in thermal transport properties. Therefore, understanding how the nanoscale features and energy exchange between the heat carriers affect thermal transport characteristics are the goals of this research. Molecular dynamics (MD) is applied in this research to understand the details of nanoscale heat transport. The advantage of MD is that the size effect, anharmonicity, atomistic structure, and non-equilibrium behavior of the system can all be captured since the dynamics of atoms are described explicitly in MD. However, MD neglects the thermal role of electrons and therefore it is unable to describe heat transport in metal or metal-semiconductor systems accurately. To address this limitation of MD, we develop a method to simulate electronic heat transport by implementing electronic degrees of freedom to MD. In this research, nanoscale heat transport in semiconductor, metal, and metal-semiconductor systems is studied. Size effects on phonon thermal transport in SiGe superlattice thin films and nanowires are studied by MD. We find that, opposite to the macroscopic trend, superlattice thin films can achieve lower thermal conductivity than nanowires at small scales due to the change of phonon nature caused by adjusting the superlattice periodic length and specimen length. Effects of size and electron-phonon coupling rate on thermal conductivity and thermal interface resistivity in Al and model metal-semiconductor systems are studied by MD with electronic degrees of freedom. The results show that increasing the specimen

  14. Embedding plasmonic nanostructure diodes enhances hot electron emission.

    PubMed

    Knight, Mark W; Wang, Yumin; Urban, Alexander S; Sobhani, Ali; Zheng, Bob Y; Nordlander, Peter; Halas, Naomi J

    2013-04-10

    When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices. PMID:23452192

  15. Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

    NASA Astrophysics Data System (ADS)

    Fukutani, K.; Sato, T.; Galiy, P. V.; Sugawara, K.; Takahashi, T.

    2016-05-01

    We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m*=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

  16. Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser

    NASA Astrophysics Data System (ADS)

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, L.; Bittner, M.; Létal, V.; Vorlíček, V.; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E. L.; Schneidmiller, E. A.; Treusch, R.; Yurkov, M. V.

    2007-02-01

    The results of a study of irreversible changes induced at surfaces of metals, semiconductors, and insulators by extreme ultraviolet (λ<100nm) ultrashort pulses provided by TESLA Test Facility Free-Electron Laser, Phase 1 (TTF1 FEL) are reported and discussed. The laser was tuned at 86, 89, and 98nm during the experiments reported here. Energy spectra of ions ejected from the irradiated surfaces are also reported. Special attention is paid to the difference in the ablation behavior of (semi)conductors and insulators that we have observed. The difference is dramatic, while the absorption coefficients are similar for all materials at the TTF1 FEL wavelength.

  17. Spectroscopic Evidence for Exceptional Thermal Contribution to Electron-Beam Induced Fragmentation

    SciTech Connect

    Caldwell, Marissa A.; Haynor, Ben; Aloni, Shaul; Ogletree, D. Frank; Wong, H.-S. Philip; Urban, Jeffrey J.; Milliron, Delia J.

    2010-11-16

    While electron beam induced fragmentation (EBIF) has been reported to result in the formation of nanocrystals of various compositions, the physical forces driving this phenomenon are still poorly understood. We report EBIF to be a much more general phenomenon than previously appreciated, operative across a wide variety of metals, semiconductors and insulators. In addition, we leverage the temperature dependent bandgap of several semiconductors to quantify -- using in situ cathodoluminescence spectroscopy -- the thermal contribution to EBIF, and find extreme temperature rises upwards of 1000K.

  18. Nanocoaxes for Optical and Electronic Devices

    PubMed Central

    Rizal, Binod; Merlo, Juan M.; Burns, Michael J.; Chiles, Thomas C.; Naughton, Michael J.

    2014-01-01

    The evolution of micro/nanoelectronics technology, including the shrinking of devices and integrated circuit components, has included the miniaturization of linear and coaxial structures to micro/nanoscale dimensions. This reduction in the size of coaxial structures may offer advantages to existing technologies and benefit the exploration and development of new technologies. The reduction in the size of coaxial structures has been realized with various permutations between metals, semiconductors and dielectrics for the core, shield, and annulus. This review will focus on fabrication schemes of arrays of metal – nonmetal – metal nanocoax structures using non-template and template methods, followed by possible applications. The performance and scientific advantages associated with nanocoax-based optical devices including waveguides, negative refractive index materials, light emitting diodes, and photovoltaics are presented. In addition, benefits and challenges that accrue from the application of novel nanocoax structures in energy storage, electronic and sensing devices are summarized. PMID:25279400

  19. Electric radiation mapping of silver/zinc oxide nanoantennas by using electron holography

    SciTech Connect

    Sanchez, J. E.; Mendoza-Santoyo, F.; Cantu-Valle, J.; Velazquez-Salazar, J.; José Yacaman, M.; Ponce, A.; González, F. J.; Diaz de Leon, R.

    2015-01-21

    In this work, we report the fabrication of self-assembled zinc oxide nanorods grown on pentagonal faces of silver nanowires by using microwaves irradiation. The nanostructures resemble a hierarchal nanoantenna and were used to study the far and near field electrical metal-semiconductor behavior from the electrical radiation pattern resulting from the phase map reconstruction obtained using off-axis electron holography. As a comparison, we use electric numerical approximations methods for a finite number of ZnO nanorods on the Ag nanowires and show that the electric radiation intensities maps match closely the experimental results obtained with electron holography. The time evolution of the radiation pattern as generated from the nanostructure was recorded under in-situ radio frequency signal stimulation, in which the generated electrical source amplitude and frequency were varied from 0 to 5 V and from 1 to 10 MHz, respectively. The phase maps obtained from electron holography show the change in the distribution of the electric radiation pattern for individual nanoantennas. The mapping of this electrical behavior is of the utmost importance to gain a complete understanding for the metal-semiconductor (Ag/ZnO) heterojunction that will help to show the mechanism through which these receiving/transmitting structures behave at nanoscale level.

  20. The effect of hot electrons and surface plasmons on heterogeneous catalysis.

    PubMed

    Kim, Sun Mi; Lee, Si Woo; Moon, Song Yi; Park, Jeong Young

    2016-06-29

    Hot electrons and surface-plasmon-driven chemistry are amongst the most actively studied research subjects because they are deeply associated with energy dissipation and the conversion processes at the surface and interfaces, which are still open questions and key issues in the surface science community. In this topical review, we give an overview of the concept of hot electrons or surface-plasmon-mediated hot electrons generated under various structural schemes (i.e. metals, metal-semiconductor, and metal-insulator-metal) and their role affecting catalytic activity in chemical reactions. We highlight recent studies on the relation between hot electrons and catalytic activity on metallic surfaces. We discuss possible mechanisms for how hot electrons participate in chemical reactions. We also introduce controlled chemistry to describe specific pathways for selectivity control in catalysis on metal nanoparticles. PMID:27166263

  1. Coulomb blockade in monolayer MoS2 single electron transistor

    NASA Astrophysics Data System (ADS)

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-01

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals.Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08954a

  2. Coulomb blockade in monolayer MoS2 single electron transistor.

    PubMed

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-31

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. PMID:27001412

  3. Dynamics of R.F. Captured Electron Cooled Proton Beams

    SciTech Connect

    Kells, W.; Mills, F.;

    1983-01-01

    In the course of electron cooling experiments at the Electron Cooling Ring (ECR) at Fermilab, several peculiar features of the longitudinal phase space of cold protons (200 MeV) captured in R.F. buckets were observed. Here we present the experimental facts, present a simple theory, and summarize computer simulation results which support the theory and facts. The experimental apparatus and measurement techniques have been described elsewhere. R.F. bunching was achieved with a single PPA, loaded cavity gap driven at harmonic number 6({approx} 7.56 MHz) of the revolution frequency. R.F. voltage could be developed across this gap sufficient to entirely capture even the uncooled circulating proton beam ({delta}p/p FWHM = 0.17%).

  4. Coaxial Ag/ZnO/Ag nanowire for highly sensitive hot-electron photodetection

    SciTech Connect

    Zhan, Yaohui; Li, Xiaofeng Wu, Kai; Wu, Shaolong; Deng, Jiajia

    2015-02-23

    Single-nanowire photodetectors (SNPDs) are mostly propelled by p-n junctions, where the detection wavelength is constrained by the band-gap width. Here, we present a simple doping-free metal/semiconductor/metal SNPD, which shows strong detection tunability without such a material constraint. The proposed hot-electron SNPD exhibits superior optical and electrical advantages, i.e., optically the coaxial design leads to a strong asymmetrical photoabsorption and results in a high unidirectional photocurrent, as desired by the hot-electron collection; electrically the hot-electrons are generated in the region very close to the barrier, facilitating the electrical transport. Rigorous calculations predict an unbiased photoresponsivity of ∼200 nA/mW.

  5. The electronic structure of graphene tuned by hexagonal boron nitrogen layers: Semimetal-semiconductor transition

    NASA Astrophysics Data System (ADS)

    Liu, Ming-Yang; Chen, Qing-Yuan; Ma, Tai; He, Yao; Cao, Chao

    2016-05-01

    The electronic structure of graphene and hexagonal boron nitrogen (G/h-BN) systems have been carefully investigated using the pseudo-potential plane-wave within density functional theory (DFT) framework. We find that the stacking geometries and interlayer distances significantly affect the electronic structure of G/h-BN systems. By studying four stacking geometries, we conclude that the monolayer G/h-BN systems should possess metallic electronic properties. The monolayer G/h-BN systems can be transited from metallicity to semiconductor by increasing h-BN layers. It reveals that the alteration of interlayer distances 2.50-3.50 Å can obtain the metal-semiconductor-semimetal variation and a tunable band gap for G/h-BN composite systems. The band dispersion along K-H direction is analogous to the band of rhombohedral graphite when the G/h-BN systems are semiconducting.

  6. Hot Electron Scattering in Thin Metal Films Utilizing Ballistic Electron Emission Microscopy

    NASA Astrophysics Data System (ADS)

    Durcan, Christopher; Nolting, Westly; Balsano, Robert; Labella, Vincent

    Electron scattering in nm-thick metal films has fundamental and technological importance. Ballistic Electron Emission Microscopy (BEEM) an STM based technique can be utilized to measure the scattering rate and understand the scattering mechanisms. By injecting electrons from the STM tip in the energy range of 0.2 eV- 1.5 eV into the metal base of a metal semiconductor diode and measuring the amount of current collected in the semiconductor a Schottky barrier height can be measured. In addition, by measuring the decay in the collector or BEEM current vs. metal film thickness, an electron attenuation length can be measured. One question has always been; what are these BEEM attenuation lengths sensitive to? Intrinsic properties of the metal, or extrinsic effects such as the structure of the film? By measuring the attenuation length of W and Cr and comparing to prior measurements of Cu, Ag, Au a comparison between the BEEM attenuation length and resistivity can be achieved over an order of magnitude in resistivity. The results show an inverse relationship that one expects for mean free path and resistivity, indicating that BEEM measurements are sensitive to the intrinsic properties of the metal and not solely the structure of the films.

  7. FAST TRACK COMMUNICATION: Synthesis and electron transfer property of sulfhydryl-containing multi-walled carbon nanotube/gold nanoparticle heterojunctions

    NASA Astrophysics Data System (ADS)

    Feng, Xiumei; Hu, Jianqiang; Chen, Xiaohua; Xie, Jingsi; Liu, Yuying

    2009-02-01

    One-dimensional metal/semiconductor heterojunction nanomaterials have opened many new opportunities for future nanodevices because of their novel structures and unique electrical and optical properties. In this work, sulfhydryl-containing multi-walled carbon nanotube/gold nanoparticle (MWCNT/Au) heterojunctions were synthesized in high yield by a sulfhydryl- functionalized self-assembly strategy. The component, size, structure, morphology and bond mode of the MWCNT/Au heterojunctions thus prepared were investigated and demonstrated by transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy-dispersive x-ray spectroscopy, Fourier-transform infrared and UV-visible measurements. Cyclic voltammogram and electrochemical impedance spectroscopy studies indicate that the MWCNT/Au heterojunctions have a novel electron transfer property, which retards electron transfer of the horseradish peroxidase or the ferricyanide in the underlying electrodes. We believe that MWCNT/Au heterojunctions with high stability and a unique electrical property are expected to find potential applications for nanodevices.

  8. Substrate induced modulation of electronic, magnetic and chemical properties of MoSe{sub 2} monolayer

    SciTech Connect

    Wasey, A. H. M. Abdul; Chakrabarty, Soubhik; Das, G. P.

    2014-04-15

    Monolayer of MoSe{sub 2}, having a typical direct band gap of ∼1.5 eV, is a promising material for optoelectronic and solar cell applications. When this 2D semiconductor is supported on transition metal substrates, such as Ni(111) and Cu(111), its electronic structure gets modulated. First principles density functional investigation shows the appearance of de-localized mid-gap states in the density of states. The work function of the semiconductor overlayer gets modified considerably, indicating n-type doping caused by the metal contacts. The charge transfer across the metal-semiconductor junction also significantly enhances the chemical reactivity of the MoSe{sub 2} overlayer, as observed by Hydrogen absorption. Furthermore, for Ni contact, there is a signature of induced magnetism in MoSe{sub 2} monolayer.

  9. The effects on the electronic properties of BN nanoribbon with C-chain substitution doping

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyong; Zhao, Yayun; Sun, Mengyao; Xiao, Jianrong; Lu, Maowang; Wang, Liu; Zeng, Yaping; Long, Mengqiu

    2016-08-01

    The electronic properties of Boron-Nitrogen (BN) nanoribbon with Carbon (C)-chain substitution doping are investigated by performing first-principle calculations based on density functional theory. For the zigzag BN nanoribbon, the spin-unpolarized calculated results exhibit the insulator-semiconductor-metal transition with the number of substitution C-chain increasing. But for the armchair BN nanoribbon in the spin-unpolarized calculations, it is found that it appears the insulator-metal-semiconductor transition. The band gap of BN nanoribbon can be tuned according to the C-chain doping ratio. Interestingly, spin-polarized calculations exhibiting half-metallic may be tuned by changing the number of C-chain in the zigzag BN nanoribbon, opening a possibility in spintronics device based on BN nanoribbon.

  10. Role of interface band structure on hot electron transport

    NASA Astrophysics Data System (ADS)

    Garramone, John J.

    Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal

  11. Theory of hot electron photoemission from graphene

    NASA Astrophysics Data System (ADS)

    Ang, Lay Kee; Liang, Shijun

    Motivated by the development of Schottky-type photodetectors, some theories have been proposed to describe how the hot carriers generated by the incident photon are transported over the Schottky barrier through the internal photoelectric effect. One of them is Fowler's law proposed as early as 1931, which studied the temperature dependence of photoelectric curves of clean metals. This law is very successful in accounting for mechanism of detecting photons of energy lower than the band gap of semiconductor based on conventional metal/semiconductor Schottky diode. With the goal of achieving better performance, graphene/silicon contact-based- graphene/WSe2 heterostructure-based photodetectors have been fabricated to demonstrate superior photodetection efficiency. However, the theory of how hot electrons is photo-excited from graphene into semiconductor remains unknown. In the current work, we first examine the photoemission process from suspended graphene and it is found that traditional Einstein photoelectric effect may break down for suspended graphene due to the unique linear band structure. Furthermore, we find that the same conclusion applies for 3D graphene analog (e.g. 3D topological Dirac semi-metal). These findings are very useful to further improve the performance of graphene-based photodetector, hot-carrier solar cell and other kinds of sensor.

  12. Electronic measurement and control of spin transport in silicon

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Huang, Biqin; Monsma, Douwe J.

    2007-05-01

    The spin lifetime and diffusion length of electrons are transport parameters that define the scale of coherence in spintronic devices and circuits. As these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. So far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon, Si, which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and transport length due to low spin-orbit scattering and lattice inversion symmetry. Despite this promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of a fundamental impedance mismatch between ferromagnetic metal and semiconductor, and measurements are obscured by other magnetoelectronic effects. Here we demonstrate conduction-band spin transport across 10μm undoped Si in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection. As it is not based on magnetoresistance, the hot-electron spin injection and spin detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current shows independent magnetic and electrical control of spin precession, and thus confirms spin coherent drift in the conduction band of silicon.

  13. High-speed, efficient metal - semiconductor - metal photodetectors

    SciTech Connect

    Collin, St; Pardo, F; Bardou, N; Pelouard, J.-L.; Averin, S V

    2010-08-03

    Design principles and the fabrication technique of highly efficient, high-speed photodetectors based on MSM nanostructures are developed. To efficiently confine light in the region of the strong field as well as to decrease light losses due to reflection from the diode contacts, use is made of a nanoscale interdigital diffraction grating and a multilayer Bragg grating. Measurements of the reflection coefficients and the quantum efficiency for a multilayer structure are in good agreement with theoretical estimates. A record-high quantum efficiency (QE = 46 %) is obtained for high speed MSM photodetectors. The detector has a high spectral selectivity ({Delta}{lambda}{sub 1/2} = 17 nm) at a wavelength of 800 nm. Taking into account the diode capacitance and the drift time of photogenerated carriers, the performance of the detectors under study is {approx} 500 GHz. The low level of the dark current density in the structures under study (j={sup 1} pA {mu}m{sup -2}) makes it possible to realise on their basis highly sensitive, high-speed selective detectors of optical radiation.

  14. Metal semiconductor phase transition in vanadium dioxide nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez Noriega, Rene

    The goal of this research was to improve the understanding of the submicron VO2 formation in the near surface of a host material and to explore the possibility of size effects in the mechanics of the semiconductor to metal phase transition as well as in the optical properties of VO2. By means of ion implantation and thermal processing, we were able to produce variable-sized nanoscale VO2 precipitates embedded in SiO 2. The transition temperatures were found to be correlated with the size of the precipitates, in such a way that for smaller particles, both transitions were thermally delayed. A review of the energy barriers and other features involved in the transition, led us to conclude that regardless of that exact mechanism, the phase transition must proceed in a heterogeneous fashion. Smaller particles were expected to have a lower chance of containing a nucleation site and thus, they need a greater thermal driving force in order to activate them. VO2 precipitates were not only controlled in size but as an unexpected result they turned out to be produced in elongated shapes oriented mainly along the implanted surface. This morphology, which was explained in terms of the Bravais-Friedel law of crystal growth, allowed us to understand the optical properties of the precipitates. We concluded that the optical behavior shown by the particles in the SiO2 matrix, was result of a surface plasmon resonance due to the dielectric confinement and metallic character of the VO2 in the high temperature phase. Beside these contributions to material and physical sciences, we have shown that established results for VO2 doping can be applicable to our submicron particles. We were able to successfully control the width of the hysteresis loop by adding Ti ions before the precipitation. We also reached lower switching temperatures by implanting small quantities of W. Ion implantation also proved to be an easy and convenient way to incorporate VO2 nanoparticles into an optical fiber and thin film Si/SiO2 technologies.

  15. Hybrid metal-semiconductor mirror for high power VECSEL

    NASA Astrophysics Data System (ADS)

    Laurain, Alexandre; Gbele, Kokou; Hader, Jorg; Stolz, Wolfgang; Koch, Stephan; Ruiz Perez, Antje; Moloney, Jerome V.

    2016-03-01

    We demonstrate a low thermal impedance hybrid mirror VECSEL. We used only 14 pairs of AlGaAs/AlAs, transparent at the pump wavelength, and we used a patterned mask to deposit pure gold on areas of the chip to be pumped, and Ti/Au on other area to circumvent the poor adhesion of gold on GaAs. A higher gain is observed on an area metallized with pure gold and an output power of 4W was obtained, showing the effectiveness of the metallic mirror and validating the bonding quality. Chip processing and laser characteristics are studied in detail and compared to simulations.

  16. Finite Element Simulation of Metal-Semiconductor-Metal Photodetector

    SciTech Connect

    Guarino, G.; Donaldson, W.R.; Mikulics, M.; Marso, M.; Kordos, P.; Sobolewski, R.

    2009-08-19

    The successful application of finite element analysis to ultrafast optoelectronic devices is demonstrated. Finite element models have been developed for both an alloyed- and surface-contact metal–semiconductor–metal photodetectors. The simulation results agree with previously reported experimental data. The alloyed device, despite having a somewhat larger capacitance, has a non-illuminated region of lower resistance with a more-uniform and deeper-penetrating electric field and carrier transport current. The latter explains, in terms of the equivalent lumped parameters, the experimentally observed faster response of the alloyed device. The model is further used to predict improved responsivity, based on electrode spacing and antireflective coating. We project that increasing the depth of the alloyed contact beyond approximately half of the optical penetration depth will not yield significantly improved responsivity.

  17. Superatoms and Metal-Semiconductor Motifs for Cluster Materials

    SciTech Connect

    Castleman, A. W.

    2013-10-11

    A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

  18. Hot-electron-mediated surface chemistry: toward electronic control of catalytic activity.

    PubMed

    Park, Jeong Young; Kim, Sun Mi; Lee, Hyosun; Nedrygailov, Ievgen I

    2015-08-18

    nanoparticles on oxide supports and Pt-CdSe-Pt nanodumbbells. We show that the accumulation or depletion of hot electrons on metal nanoparticles, in turn, can also influence catalytic reactions. Mechanisms suggested for hot-electron-induced chemical reactions on a photoexcited plasmonic metal are discussed. We propose that the manipulation of the flow of hot electrons by changing the electrical characteristics of metal-oxide and metal-semiconductor interfaces can give rise to the intriguing capability of tuning the catalytic activity of hybrid nanocatalysts. PMID:26181684

  19. Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Mohan Manoj Kumar, Chandra; Jesudas Anand, Mulagumoottil; Liu, Zhi Hong

    2015-04-01

    This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.

  20. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

    SciTech Connect

    Kanagasekaran, Thangavel E-mail: Shimotani@m.tohoku.ac.jp Ikeda, Susumu; Kumashiro, Ryotaro; Shimotani, Hidekazu E-mail: Shimotani@m.tohoku.ac.jp Shang, Hui; Tanigaki, Katsumi E-mail: Shimotani@m.tohoku.ac.jp

    2015-07-27

    Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

  1. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Synthesis and electrical characterization of tungsten oxide nanowires

    NASA Astrophysics Data System (ADS)

    Huang, Rui; Zhu, Jing; Yu, Rong

    2009-07-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I-V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  2. Electronic and magnetic properties of early transition-metal substituted iron-cyclopentadienyl sandwich molecular wires: Parity-dependent half-metallicity

    NASA Astrophysics Data System (ADS)

    Li, Yuanchang; Zhou, Gang; Wu, Jian; Duan, Wenhui

    2011-07-01

    Electronic and magnetic properties of early transition metals (V, Ti, Sc)-FekCpk + 1 sandwich molecular wires (SMWs) are investigated by means of ab initio calculations. It is found that all SMWs favor a ferromagnetic ground state. Significantly, V-FekCpk + 1 SMWs are either half-metallic or semiconducting, dependent upon the parity (even or odd) of the number (k) of Fe atoms in the unit cell of SMWs. This parity oscillation of conductive properties results from the combined effects of the band-folding and gap-opening at the Brillouin-zone boundary of one-dimensional materials. In contrast, Sc-FekCpk + 1 and Ti-FekCpk + 1 SMWs are always semiconducting. Our work may open up the way toward half metal/semiconductor heterostructures with perfect atomic interface.

  3. Strongly correlated valence electrons and core-level chemical bonding of Lithium at terapascal pressures

    NASA Astrophysics Data System (ADS)

    Hu, Anguang; Zhang, Fan

    2015-03-01

    As the simplest pure metal, lithium exhibits some novel properties on electrical conductivity and crystal structures under high pressure. All-electron density functional theory simulations, recently developed by using the linear combination of localized Slater atomic orbitals, revealed that the bandwidth of its valence bands remains almost unchanged within about 3.5 eV even up to a terapascal pressure range. This indicates that the development from delocalized to strongly correlated electronic systems takes place under compression, resulting in metal-semiconductor and superconductivity transitions together with a sequence of new high-pressure crystal phases, discovered experimentally. In contrast to the valence bands, the core-level bands become broadening up to about 10 eV at terapascal pressures. It means the transformation from chemical non-bonding to bonding for core electrons. Thus, dense lithium under compression can be characterized as core-level chemical bonding and a completely new class of strongly correlated materials with narrow bands filled in s-electron shells only.

  4. Effect of interfaces on electron transport properties of MoS2-Au Contacts

    NASA Astrophysics Data System (ADS)

    Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

    2014-03-01

    Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

  5. On the application of quantum transport theory to electron sources.

    PubMed

    Jensen, Kevin L

    2003-01-01

    Electron sources (e.g., field emitter arrays, wide band-gap (WBG) semiconductor materials and coatings, carbon nanotubes, etc.) seek to exploit ballistic transport within the vacuum after emission from microfabricated structures. Regardless of kind, all sources strive to minimize the barrier to electron emission by engineering material properties (work function/electron affinity) or physical geometry (field enhancement) of the cathode. The unique capabilities of cold cathodes, such as instant ON/OFF performance, high brightness, high current density, large transconductance to capacitance ratio, cold emission, small size and/or low voltage operation characteristics, commend their use in several advanced devices when physical size, weight, power consumption, beam current, and pulse repletion frequency are important, e.g., RF power amplifier such as traveling wave tubes (TWTs) for radar and communications, electrodynamic tethers for satellite deboost/reboost, and electric propulsion systems such as Hall thrusters for small satellites. The theoretical program described herein is directed towards models to evaluate emission current from electron sources (in particular, emission from WBG and Spindt-type field emitter) in order to assess their utility, capabilities and performance characteristics. Modeling efforts particularly include: band bending, non-linear and resonant (Poole-Frenkel) potentials, the extension of one-dimensional theory to multi-dimensional structures, and emission site statistics due to variations in geometry and the presence of adsorbates. Two particular methodologies, namely, the modified Airy approach and metal-semiconductor statistical hyperbolic/ellipsoidal model, are described in detail in their present stage of development. PMID:12535543

  6. Towards a fundamental understanding of inhomogeneous interfaces utilizing ballistic electron emission microscopy

    NASA Astrophysics Data System (ADS)

    Balsano, Robert

    A fundamental understanding of charge transport across metal/semiconductor interfaces is of great technological and scientific importance. Metal/semiconductor, or Schottky barrier devices are widely utilized in sensing applications and power electronics. Additionally, Schottky barriers appear in resistive memory technology and current transistor technology. Although Schottky interfaces are ubiquitous, the effects of spatially variant interfaces on the measured Schottky barrier height (SBH) are not entirely understood. For these reasons it is necessary to explore the spatial variation at Schottky interfaces at the nanoscale. Ballistic electron emission microscopy (BEEM) is a three terminal scanning tunneling microscopy (STM) technique used to measure hot carrier transport through materials and across interfaces. BEEM has been used to directly measure the SBH with nanoscale spatial resolution, displaying the natural SBH inhomogeneity. This work explores the utility of SBH mapping with BEEM in identifying interface composition with electrostatic measurements. In the context of the band gap of the semiconductor, a self-consistent test of SBH measurement is presented for Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes. This was accomplished by comparing the sum of the measured SBHs of p-type and n-type samples to the band gap of Si. These measurements are taken at 80 K and verify agreement with the Bell-Kaiser (BK) t to the SBH. Additional 11.7 nm resolution SBH mapping was performed on Au/Ag/Si(001) diodes at 80 K. It was found that the SBH in regions rich in Ag surrounded by Au was raised due to pinch-off effects. Pinch-off is treated in the context of an electrostatic perturbation and is shown to have considerable impact on the samples in this study. By analyzing the statistical distribution of the local SBH, the interface chemical composition is approximated from the relative SBH contribution. The ballistic electron emission microscopy (BEEM) data agreed with

  7. Solar energy conversion via hot electron internal photoemission in metallic nanostructures: Efficiency estimates

    SciTech Connect

    Leenheer, Andrew J.; Narang, Prineha; Atwater, Harry A.; Lewis, Nathan S.

    2014-04-07

    Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of <1% for such systems. However, relaxation of the assumptions regarding constraints on the escape cone and momentum conservation at the interface yields solar energy-conversion efficiencies as high as 1%–10%, under some assumed (albeit optimistic) operating conditions. Under these conditions, the energy-conversion efficiency is mainly limited by the thermionic dark current, the distribution of hot electron energies, and hot-electron momentum considerations.

  8. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    SciTech Connect

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong Ji, An; Yang, Fuhua

    2014-03-15

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  9. High speed photodetectors based on a two-dimensional electron/hole gas heterostructure

    NASA Astrophysics Data System (ADS)

    Gallo, Eric M.; Cola, Adriano; Quaranta, Fabio; Spanier, Jonathan E.

    2013-04-01

    We report on high-speed metal-semiconductor-metal (MSM) resonant cavity enhanced photodetectors based on Schottky-contacted (Al,In)GaAs heterostructures containing both electron and hole quantum wells. Interdigitated detectors were fabricated and characterized with and without an underlying Distributed Bragg Reflector (DBR). All detectors had very low dark currents and high linear responsivities. The fastest measured temporal response with a 16 ps full-width at half-maximum and a 29 ps fall time was demonstrated on a device with 1 μm gap between electrodes and an underlying DBR. Single quantum well detectors have previously demonstrated increased responsivity and speed but were limited by a slow decaying tail in the high speed photoresponse, attributed to the long collection path of minority carriers. The use of an electron and hole well, separated by a 110 nm absorption region as well as an underlying DBR, eliminates the slow tail by providing an enhanced collection path for both optically generated electrons and holes. Here, we present the fabricated device structure along with the DC and high speed photoresponse under varying incident powers. We briefly compare these results to those of the previous single well devices and attribute improvements in the time response tail to enhanced diffusion created by the presence of the separated dual well structure.

  10. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  11. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    SciTech Connect

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-09-14

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

  12. First-principles study of the electronic and the magnetic properties of Cr-doped wurtzite cadmium sulfide (Cd1- x Cr x S, x = 12.5% and 6.25%)

    NASA Astrophysics Data System (ADS)

    Nabi, Azeem; Majid, Abdul

    2015-08-01

    The electronic and the magnetic properties of Cr-doped wurtzite cadmium sulfide (Cd1- x Cr x S) at different concentrations ( x = 12.5% and 6.25%) are investigated in the frame work of the generalized gradient approximation (GGA), its extension through on-site Hubbard U interactions (GGA+U), and the Tran Blaha modified Becke-Johnson (TB-mBJ) potential. The ferromagnetic exchange interactions between Cr-Cr atoms via S atoms are studied. The magnetic moments on these atoms are studied in detail by using different charge analysis techniques. The p-d hybridization reduces the local magnetic moment on Cr from its free space charge value and produces a small local magnetic moment on the nonmagnetic Cd and S host sites. Cr-doped CdS provides a half-metallic semiconductor.

  13. Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

    NASA Astrophysics Data System (ADS)

    Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Mohan Manoj Kumar, Chandra; Ang, Kian Siong; Jesudas Anand, Mulagumoottil; Wang, Hong; Hofstetter, René; Ye, Gang

    2013-11-01

    Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ˜5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface.

  14. Graphene nanoribbon blends with P3HT for organic electronics

    NASA Astrophysics Data System (ADS)

    El Gemayel, Mirella; Narita, Akimitsu; Dössel, Lukas F.; Sundaram, Ravi S.; Kiersnowski, Adam; Pisula, Wojciech; Hansen, Michael Ryan; Ferrari, Andrea C.; Orgiu, Emanuele; Feng, Xinliang; Müllen, Klaus; Samorì, Paolo

    2014-05-01

    In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed N = 18 armchair graphene nanoribbons (GNRs). The latter, prepared by a bottom-up solution synthesis, are expected to form solid aggregates which cannot be easily interfaced with metallic electrodes, limiting charge injection at metal-semiconductor interfaces, and are characterized by a finite size, thus by grain boundaries, which negatively affect the charge transport within the film. Both P3HT and GNRs are soluble/dispersible in organic solvents, enabling the use of a single step co-deposition process. The resulting OFETs show a three-fold increase in the charge carrier mobilities in blend films, when compared to pure P3HT devices. This behavior can be ascribed to GNRs, and aggregates thereof, facilitating the transport of the charges within the conduction channel by connecting the domains of the semiconductor film. The electronic characteristics of the devices such as the Ion/Ioff ratio are not affected by the addition of GNRs at different loads. Studies of the electrical characteristics under illumination for potential use of our blend films as organic phototransistors (OPTs) reveal a tunable photoresponse. Therefore, our strategy offers a new method towards the enhancement of the performance of OFETs, and holds potential for technological applications in (opto)electronics.In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the

  15. Atomic scale structure and chemistry of interfaces by Z-contrast imaging and electron energy loss spectroscopy in the STEM

    SciTech Connect

    McGibbon, M.M.; Browning, N.D.; Chisholm, M.F.; Pennycook, S.J.

    1993-12-01

    The macroscopic properties of many materials are controlled by the structure and chemistry at the grain boundaries. A basic understanding of the structure-property relationship requires a technique which probes both composition and chemical bonding on an atomic scale. The high-resolution Z-contrast imaging technique in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition can be interpreted intuitively. This direct image allows the electron probe to be positioned over individual atomic columns for parallel detection electron energy loss spectroscopy (PEELS) at a spatial resolution approaching 0.22nm. The bonding information which can be obtained from the fine structure within the PEELS edges can then be used in conjunction with the Z-contrast images to determine the structure at the grain boundary. In this paper we present 3 examples of correlations between the structural, chemical and electronic properties at materials interfaces in metal-semiconductor systems, superconducting and ferroelectric materials.

  16. Chemical bonding, interdiffusion and electronic structure at InP, GaAs, and Si-metal interfaces

    NASA Astrophysics Data System (ADS)

    Brillson, L. J.

    1985-10-01

    An experimental program investigates the interface electronic states and band structure at Germanium Arsenides, Indium Phosphides and Silicon-metal interfaces formed by chemical reaction and interdiffusion at room temperature, elevated temperatures, as well as following pulsed-laser annealing; uses soft X-ray photoemission spectroscopy (SXPS) and Auger electron spectroscopy (AES)/depth profiling to characterize atomic redistribution and new chemical bonding near the surfaces and interfaces on an atomic scale; refines the technique of cathodoluminescence spectroscopy (CLS) for investigations of new compound and defect formation at buried metal-semiconductor interfaces; and employs temperature-dependent current-voltage and capacitance-voltage measurements to characterize the electronic properties and spatial distribution of interface states of metal-InP interfaces prepared and processed under carefully controlled conditions. The work can be grouped into four areas: (1) chemical and electronic structure of buried III-V and II-VI compound semiconductor-metal interfaces, (2) localized chemical reactions at Aluminum interfaces with III-V compound semiconductors promoted by pulsed-laser annealing as well as laser-induced oxidation of Si, (3) eletrical characterization of the UHV-prepared Al-InP (110) interface, and (4) control of competitive Ti-Si and Ti-SiO2 interfacial reactions by rapid thermal annealing.

  17. Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Kumar, Ravinder; Engles, Derick

    2015-05-01

    In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.

  18. Line defects in graphene: How doping affects the electronic and mechanical properties

    NASA Astrophysics Data System (ADS)

    Berger, Daniel; Ratsch, Christian

    2016-06-01

    Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local nonhexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature exciting electronic properties. Here, we address the properties of line defects in graphene from first principles on the level of full-potential density-functional theory, and assess doping as one strategy to strengthen such materials. We carefully disentangle the global and local effect of doping by comparing results from the virtual crystal approximation with those from local substitution of chemical species, in order to gain a detailed understanding of the breaking and stabilization mechanisms. We find that doping primarily affects the occupation of the frontier orbitals. Occupation through n -type doping or local substitution with nitrogen increases the ultimate tensile strength significantly. In particular, it can stabilize the defects beyond the ultimate tensile strength of the pristine material. We therefore propose this as a key strategy to strengthen graphenic materials. Furthermore, we find that doping and/or applying external stress lead to tunable and technologically interesting metal/semiconductor transitions.

  19. Monolithic integration of 1.3-μm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

    NASA Astrophysics Data System (ADS)

    Fink, Thomas; Hurm, Volker; Raynor, Brian; Koehler, Klaus; Benz, Willy; Ludwig, M.

    1995-04-01

    For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometers have been fabricated successfully on GaAs substrates using InGaAs metal-semiconductor-metal (MSM) photodiodes and AlGaAs/GaAs/AlGaAs high-electron-mobility transistors (HEMTs). Using molecular beam epitaxy (MBE), the photodetector layers were grown on top of a double (delta) -doped AlGaAs/GaAs/AlGaAs HEMT structure which allows the fabrication of enhancement and depletion field effect transistors. The photoabsorbing InGaAs layer was grown at 500 degree(s)C. To fabricate the optoelectronic receivers, first, an etch process using a combination of non-selective wet etching and selective reactive ion etching was applied to produce mesas for the photoconductors and to uncover the HEMT structure in all other areas. For the electronic circuits, our well-established HEMT process for 0.3-micrometers transistor gates was used which includes electron-beam lithography for gate definition and optical lithography for NiCr thin films resistors, capacitors, and inductors. The interdigitated MSM photodiode fingers were also fabricated using electron-beam lithography. For interconnecting the electronic circuits and the photodetectors, air bridges were employed. The entire process was performed on 2-inch wafers with more than 90% yield of functional receivers. The finished receiver--basically an MSM photodetector linked to a transimpedance amplifier--is operational at an incident wavelength of 1.3 micrometers at data rates up to 1.2 Gbit/s. The sensitivity of the detectors is 0.16 A/W at a 10 V bias.

  20. Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

    SciTech Connect

    Parui, Subir E-mail: l.hueso@nanogune.eu; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E. E-mail: l.hueso@nanogune.eu

    2015-11-02

    We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

  1. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  2. Electron radiography

    SciTech Connect

    Merrill, Frank E.; Morris, Christopher

    2005-05-17

    A system capable of performing radiography using a beam of electrons. Diffuser means receive a beam of electrons and diffuse the electrons before they enter first matching quadrupoles where the diffused electrons are focused prior to the diffused electrons entering an object. First imaging quadrupoles receive the focused diffused electrons after the focused diffused electrons have been scattered by the object for focusing the scattered electrons. Collimator means receive the scattered electrons and remove scattered electrons that have scattered to large angles. Second imaging quadrupoles receive the collimated scattered electrons and refocus the collimated scattered electrons and map the focused collimated scattered electrons to transverse locations on an image plane representative of the electrons' positions in the object.

  3. Low-energy electron diffraction study of Si(111)-(√3x √3)R30∘ -B

    NASA Astrophysics Data System (ADS)

    Marino, K. E.; Huang, Y. T.; Diehl, R. D.; Tu, Weison; Mulugeta, Daniel; Snijders, P. C.; Weitering, H. H.

    2014-03-01

    Metal-semiconductor interfaces are important for the function and manufacture of advanced electronics, such as those used in computers, tablets and phones. They also exhibit many interesting physical phenomena that are interesting from a fundamental point of view, including exotic phases and phase transitions. This study involves the analysis and modeling of the surface structure of a thin film of boron on the Si(111) surface. The addition of metal atoms to the surface of Si(111) simplifies its structure by removing a ``rippling'' that is present on the clean surface. The low-energy electron diffraction (LEED) data were measured at a surface temperature of 80 K at ORNL. The LEED analysis utilized the SATLEED analysis programs. The results are similar to those obtained in an earlier LEED study for this interface, but the precision is higher due to the larger dataset employed., The results of this study will be compared to other studies of this and similar systems. We acknowledge the Eberly College of Science for funding this project. González, Guo, Ortega, Flores, Weitering. Phys. Rev. Lett. 102, 115501 (2009)

  4. Ambient Electronics

    NASA Astrophysics Data System (ADS)

    Sekitani, Tsuyoshi; Someya, Takao

    2012-10-01

    We report the recent research progress and future prospects of flexible and printed electronics, focusing on molecular electronic material-based thin-film transistors, which are expected to usher in a new era of electronics.

  5. The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

    PubMed

    Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

    2011-05-24

    Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments. PMID:21456598

  6. Hot-Electron-Induced Highly Efficient O2 Activation by Pt Nanoparticles Supported on Ta2O5 Driven by Visible Light.

    PubMed

    Sakamoto, Hirokatsu; Ohara, Tomoyuki; Yasumoto, Naoki; Shiraishi, Yasuhiro; Ichikawa, Satoshi; Tanaka, Shunsuke; Hirai, Takayuki

    2015-07-29

    Aerobic oxidation on a heterogeneous catalyst driven by visible light (λ >400 nm) at ambient temperature is a very important reaction for green organic synthesis. A metal particles/semiconductor system, driven by charge separation via an injection of "hot electrons (e(hot)(-))" from photoactivated metal particles to semiconductor, is one of the promising systems. These systems, however, suffer from low quantum yields for the reaction (<5% at 550 nm) because the Schottky barrier created at the metal/semiconductor interface suppresses the e(hot)(-) injection. Some metal particle systems promote aerobic oxidation via a non-e(hot)(-)-injection mechanism, but require high reaction temperatures (>373 K). Here we report that Pt nanoparticles (∼5 nm diameter), when supported on semiconductor Ta2O5, promote the reaction without e(hot)(-) injection at room temperature with significantly high quantum yields (∼25%). Strong Pt-Ta2O5 interaction increases the electron density of the Pt particles and enhances interband transition of Pt electrons by absorbing visible light. A large number of photogenerated e(hot)(-) directly activate O2 on the Pt surface and produce active oxygen species, thus promoting highly efficient aerobic oxidation at room temperature. PMID:26158296

  7. Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS{sub 2} heterostructures

    SciTech Connect

    Guo, Xiaoyan; Yang, Guohui; Zhang, Junfeng; Xu, Xiaohong

    2015-09-15

    Two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) phase hybrid system composed by 2H and 1T phase is a natural metal/semiconductor heterostructures and promised a wide range of potential applications. Here, we report the first principle investigations on the structural, mechanical and electronic properties of hybrid system with armchair (AC) and zigzag (ZZ) interfaces. The ZZ type 1T/2H interface are more energy favorable than AC type interface with 3.39 eV/nm. Similar with that of bulked 1T MoS{sub 2}, the intrinsic strengths of the heterostructures are lower than that of the bulk 2H, especially for that with ZZ interface. Analysis of density of states shows that the electronic properties gradually transmitted from the metallic 1T phase to the semiconducting 2H phase for the structural abrupt interface. The present theoretical results constitute a useful picture for the 2D electronic devices using current MoS{sub 2} 1T/2H heterostructures and provide vital insights into the other 2D hybrid materials.

  8. Electrons, Electronic Publishing, and Electronic Display.

    ERIC Educational Resources Information Center

    Brownrigg, Edwin B.; Lynch, Clifford A.

    1985-01-01

    Provides a perspective on electronic publishing by distinguishing between "Newtonian" publishing and "quantum-mechanical" publishing. Highlights include media and publishing, works delivered through electronic media, electronic publishing and the printed word, management of intellectual property, and recent copyright-law issues and their…

  9. Convoy electrons

    SciTech Connect

    Burgdoerfer, J. . Dept. of Physics and Astronomy Oak Ridge National Lab., TN )

    1990-01-01

    Recent developments in the theory of the production and of the transport of convoy electrons through solids are reviewed. Similarities and differences to cusp electron emission in binary ion-atom collisions and to transport of free'' electrons through solids are highlighted. We also discuss recent observations of convoy electron emission in ion-surface collisions at small glancing angles. 36 refs., 13 figs.

  10. Au-gated SrTiO{sub 3} field-effect transistors with large electron concentration and current modulation

    SciTech Connect

    Verma, Amit Jena, Debdeep; Raghavan, Santosh; Stemmer, Susanne

    2014-09-15

    We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO{sub 3}. As a result of the large dielectric constant of SrTiO{sub 3} and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 10{sup 14 }cm{sup −2} electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO{sub 3} MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO{sub 3} in increasing the pinch off voltage of the MESFET.

  11. Optical Dark-Field and Electron Energy Loss Imaging and Spectroscopy of Symmetry-Forbidden Modes in Loaded Nanogap Antennas.

    PubMed

    Brintlinger, Todd; Herzing, Andrew A; Long, James P; Vurgaftman, Igor; Stroud, Rhonda; Simpkins, B S

    2015-06-23

    We have produced large numbers of hybrid metal-semiconductor nanogap antennas using a scalable electrochemical approach and systematically characterized the spectral and spatial character of their plasmonic modes with optical dark-field scattering, electron energy loss spectroscopy with principal component analysis, and full wave simulations. The coordination of these techniques reveal that these nanostructures support degenerate transverse modes which split due to substrate interactions, a longitudinal mode which scales with antenna length, and a symmetry-forbidden gap-localized transverse mode. This gap-localized transverse mode arises from mode splitting of transverse resonances supported on both antenna arms and is confined to the gap load enabling (i) delivery of substantial energy to the gap material and (ii) the possibility of tuning the antenna resonance via active modulation of the gap material's optical properties. The resonant position of this symmetry-forbidden mode is sensitive to gap size, dielectric strength of the gap material, and is highly suppressed in air-gapped structures which may explain its absence from the literature to date. Understanding the complex modal structure supported on hybrid nanosystems is necessary to enable the multifunctional components many seek. PMID:25961937

  12. Electron Microscopy.

    ERIC Educational Resources Information Center

    Beer, Michael

    1980-01-01

    Reviews technical aspects of structure determination in biological electron microscopy (EM). Discusses low dose EM, low temperature microscopy, electron energy loss spectra, determination of mass or molecular weight, and EM of labeled systems. Cites 34 references. (CS)

  13. Electronics Curriculum.

    ERIC Educational Resources Information Center

    Prickett, Charlotte

    This document presents results of research conducted by industry representatives regarding tasks performed by electronic technicians and line manufacturing electro-mechanical technicians in Arizona electronics industries. Based on this research, a competency-based curriculum was developed for training entry-level electronics technicians. Twelve…

  14. Electronic Mail.

    ERIC Educational Resources Information Center

    Pollard, Jim; Holznagel, Don

    1984-01-01

    Decision makers must address the issues of (1) just what are electronic communications? (2) how will they help me teach, administer, or survive? and (3) what will it cost in time and money? Electronic mail allows the sending of letters, memos, and messages to anyone who uses the same electronic mail system, and provides most of the options that…

  15. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    SciTech Connect

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  16. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    NASA Astrophysics Data System (ADS)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei

    2015-09-01

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  17. How Spirals and Gaps Driven by Companions in Protoplanetary Disks Appear in Scattered Light at Arbitrary Viewing Angles

    NASA Astrophysics Data System (ADS)

    Dong, Ruobing; Fung, Jeffrey; Chiang, Eugene

    2016-07-01

    Direct imaging observations of protoplanetary disks at near-infrared (NIR) wavelengths have revealed structures of potentially planetary origin. Investigations of observational signatures from planet-induced features have so far focused on disks viewed face-on. Combining 3D hydrodynamics and radiative transfer simulations, we study how the appearance of the spiral arms and the gap produced in a disk by a companion varies with inclination and position angle in NIR scattered light. We compare the cases of a 3M J and a 0.1M ⊙ companion, and make predictions suitable for testing with Gemini/GPI, Very Large Telescope/NACO/SPHERE, and Subaru/HiCIAO/SCExAO. We find that the two trailing arms produced by an external perturber can have a variety of morphologies in inclined systems—they may appear as one trailing arm; two trailing arms on the same side of the disk; or two arms winding in opposite directions. The disk ring outside a planetary gap may also mimic spiral arms when viewed at high inclinations. We suggest potential explanations for the features observed in HH 30, HD 141569 A, AK Sco, HD 100546, and AB Aur. We emphasize that inclined views of companion-induced features cannot be converted into face-on views using simple and commonly practiced image deprojections.

  18. Microfluidic electronics.

    PubMed

    Cheng, Shi; Wu, Zhigang

    2012-08-21

    Microfluidics, a field that has been well-established for several decades, has seen extensive applications in the areas of biology, chemistry, and medicine. However, it might be very hard to imagine how such soft microfluidic devices would be used in other areas, such as electronics, in which stiff, solid metals, insulators, and semiconductors have previously dominated. Very recently, things have radically changed. Taking advantage of native properties of microfluidics, advances in microfluidics-based electronics have shown great potential in numerous new appealing applications, e.g. bio-inspired devices, body-worn healthcare and medical sensing systems, and ergonomic units, in which conventional rigid, bulky electronics are facing insurmountable obstacles to fulfil the demand on comfortable user experience. Not only would the birth of microfluidic electronics contribute to both the microfluidics and electronics fields, but it may also shape the future of our daily life. Nevertheless, microfluidic electronics are still at a very early stage, and significant efforts in research and development are needed to advance this emerging field. The intention of this article is to review recent research outcomes in the field of microfluidic electronics, and address current technical challenges and issues. The outlook of future development in microfluidic electronic devices and systems, as well as new fabrication techniques, is also discussed. Moreover, the authors would like to inspire both the microfluidics and electronics communities to further exploit this newly-established field. PMID:22711057

  19. Electronic Photography

    NASA Technical Reports Server (NTRS)

    Payne, Meredith Lindsay

    1995-01-01

    The main objective was to assist in the production of electronic images in the Electronic Photography Lab (EPL). The EPL is a new facility serving the electronic photographic needs of the Langley community. The purpose of the Electronic Photography lab is to provide Langley with access to digital imaging technology. Although the EPL has been in operation for less than one year, almost 1,000 images have been produced. The decision to establish the lab was made after careful determination of the centers needs for electronic photography. The LaRC community requires electronic photography for the production of electronic printing, Web sites, desktop publications, and its increased enhancement capabilities. In addition to general use, other considerations went into the planning of the EPL. For example, electronic photography is much less of a burden on the environment compared to conventional photography. Also, the possibilities of an on-line database and retrieval system could make locating past work more efficient. Finally, information in an electronic image is quantified, making measurements and calculations easier for the researcher.

  20. Paper electronics.

    PubMed

    Tobjörk, Daniel; Österbacka, Ronald

    2011-05-01

    Paper is ubiquitous in everyday life and a truly low-cost substrate. The use of paper substrates could be extended even further, if electronic applications would be applied next to or below the printed graphics. However, applying electronics on paper is challenging. The paper surface is not only very rough compared to plastics, but is also porous. While this is detrimental for most electronic devices manufactured directly onto paper substrates, there are also approaches that are compatible with the rough and absorptive paper surface. In this review, recent advances and possibilities of these approaches are evaluated and the limitations of paper electronics are discussed. PMID:21433116

  1. Electron bifurcation.

    PubMed

    Peters, John W; Miller, Anne-Frances; Jones, Anne K; King, Paul W; Adams, Michael Ww

    2016-04-01

    Electron bifurcation is the recently recognized third mechanism of biological energy conservation. It simultaneously couples exergonic and endergonic oxidation-reduction reactions to circumvent thermodynamic barriers and minimize free energy loss. Little is known about the details of how electron bifurcating enzymes function, but specifics are beginning to emerge for several bifurcating enzymes. To date, those characterized contain a collection of redox cofactors including flavins and iron-sulfur clusters. Here we discuss the current understanding of bifurcating enzymes and the mechanistic features required to reversibly partition multiple electrons from a single redox site into exergonic and endergonic electron transfer paths. PMID:27016613

  2. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  3. Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

    SciTech Connect

    Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae; Jay Guo, L.

    2014-06-09

    We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, can have potential for diverse applications ranging from color display devices to the image sensors.

  4. Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

    DOEpatents

    Sopori, Bhushan L.

    1993-01-01

    Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

  5. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    PubMed Central

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  6. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.

    PubMed

    Glaser, Markus; Kitzler, Andreas; Johannes, Andreas; Prucnal, Slawomir; Potts, Heidi; Conesa-Boj, Sonia; Filipovic, Lidija; Kosina, Hans; Skorupa, Wolfgang; Bertagnolli, Emmerich; Ronning, Carsten; Fontcuberta I Morral, Anna; Lugstein, Alois

    2016-06-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  7. Growth of metal-semiconductor core-multishell nanorods with optimized field confinement and nonlinear enhancement.

    PubMed

    Nan, Fan; Xie, Fang-Ming; Liang, Shan; Ma, Liang; Yang, Da-Jie; Liu, Xiao-Li; Wang, Jia-Hong; Cheng, Zi-Qiang; Yu, Xue-Feng; Zhou, Li; Wang, Qu-Quan; Zeng, Jie

    2016-06-01

    This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities. PMID:27241031

  8. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

    PubMed Central

    2016-01-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  9. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy.

    PubMed

    Chakrabarti, Sudipto; Pal, Amlan J

    2015-06-01

    We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse. PMID:25966930

  10. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  11. Metal-semiconductor-oxide extreme hyperbolic metamaterials for selectable canalization wavelength

    NASA Astrophysics Data System (ADS)

    Caligiuri, Vincenzo; De Luca, Antonio

    2016-03-01

    Hyperbolic metamaterials (HMMs) are artificial structures whose extreme optical anisotropy opens the way for a broad range of applications in the visible range, from perfect lensing to attomolar biosensing. In this work we investigate the possibility of realizing an HMM structure presenting a dielectric singularity in the anisotropic permittivity response. A transition point of inverted but coexisting anisotropies is obtained at a specified wavelength due to the particular design of the multilayer meta-structure, possessing different optical properties depending on the investigation frequency. Once properly designed for only a few metal-dielectric pairs in the visible range, there is no way to shift the transition wavelength between these coexisting anisotropies and keep the same constituents. We present a simple way of overcoming this problem and set up a method to tune this transition point within almost the entire visible range without changing the constituent fundamental materials.

  12. Printed Electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-Hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2015-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  13. Printed electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel A. (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2012-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  14. Printed Electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel A. (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-Hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2014-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  15. Electronic Cereal.

    ERIC Educational Resources Information Center

    Frentrup, Julie R.; Phillips, Donald B.

    1996-01-01

    Describes activities that use Froot Loops breakfast cereal to help students master the concepts of valence electrons and chemical bonding and the implications of the duet and octet rules. Involves students working in groups to create electron dot structures for various compounds. (JRH)

  16. Communications Electronics.

    ERIC Educational Resources Information Center

    Vorderstrasse, Ron; Siebert, Leo

    This module is the third in a series of electronics publications and serves as a supplement to "General Electronics Technician." It is designed to provide students with an overview of the broad field of communications. Included are those tasks above the basic skills level that allow students to progress to a higher level of competency in the…

  17. Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates

    NASA Astrophysics Data System (ADS)

    Westmacott, K. H.; Hinderberger, S.; Dahmen, U.

    2001-06-01

    Epitaxial fcc, bcc and hcp metal and alloy films were grown in high vacuum by physical vapour deposition at high rate ('flash' deposition) on the (111), (110) and (100) surfaces of Si and Ge at different deposition temperatures. The resulting epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction. Simple epitaxial relationships were found mainly for the fcc metals that form binary eutectic systems with Si and G e. Of these, Ag exhibited exceptional behaviour by forming in a single crystal cube-cube relationship on all six semiconductor surfaces. Al and Au both formed bicrystal films on (100) substrates but differed in their behaviours on (111) substrates. Silicide formers such as the fcc metals Cu and Ni, as well as all bcc and hcp metals investigated, did not adopt epitaxial relationships on most semiconductor substrates. However, epitaxial single-crystal, bicrystal and tricrystal films of several metals and alloys could be grown by using a Ag buffer layer. The factors controlling the epitaxial growth of metal films are discussed in the light of the observations and compared with the predictions of established models for epitaxial relationships. It is concluded that epitaxial films can be grown easily if the film forms a simple eutectic or monotectic system with the substrate. The epitaxial relationships of those films depend on crystallographic factors for metal-metal epitaxy and on the substrate surface structure for metal-semiconductor epitaxy.

  18. Electronic neuroprocessors

    NASA Technical Reports Server (NTRS)

    Thakoor, Anil

    1991-01-01

    The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application potential for a variety of NASA, DoD, as well as commercial application problems, where conventional computing techniques are extremely time-consuming, cumbersome, or simply non-existent. An overview of the JPL electronic neural network hardware development activities and some of the striking applications of the JPL electronic neuroprocessors are presented.

  19. Electronic prototyping

    NASA Technical Reports Server (NTRS)

    Hopcroft, J.

    1987-01-01

    The potential benefits of automation in space are significant. The science base needed to support this automation not only will help control costs and reduce lead-time in the earth-based design and construction of space stations, but also will advance the nation's capability for computer design, simulation, testing, and debugging of sophisticated objects electronically. Progress in automation will require the ability to electronically represent, reason about, and manipulate objects. Discussed here is the development of representations, languages, editors, and model-driven simulation systems to support electronic prototyping. In particular, it identifies areas where basic research is needed before further progress can be made.

  20. Electronic plants

    PubMed Central

    Stavrinidou, Eleni; Gabrielsson, Roger; Gomez, Eliot; Crispin, Xavier; Nilsson, Ove; Simon, Daniel T.; Berggren, Magnus

    2015-01-01

    The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants’ “circuitry” has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization. PMID:26702448

  1. Electronic plants.

    PubMed

    Stavrinidou, Eleni; Gabrielsson, Roger; Gomez, Eliot; Crispin, Xavier; Nilsson, Ove; Simon, Daniel T; Berggren, Magnus

    2015-11-01

    The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants' "circuitry" has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization. PMID:26702448

  2. Electronic Cigarettes

    MedlinePlus

    ... and Figures Tobacco and Nicotine Smoked Tobacco Products Smokeless Tobacco Products Electronic Cigarettes New FDA Regulations HEALTH EFFECTS ... Secondhand Smoke Effects of Smoking on Your Health Smokeless Tobacco and Your Health Tobacco Use and Fertility Tobacco ...

  3. Electronic Prescribing

    MedlinePlus

    ... 1-877-486-2048 . I went to the pharmacy, and my prescription was ready. Electronic eRx Prescribing ... write and send your prescriptions directly to your pharmacy. This means no more prescriptions on paper and ...

  4. Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes

    NASA Astrophysics Data System (ADS)

    Brown, T. M.; Friend, R. H.; Millard, I. S.; Lacey, D. J.; Butler, T.; Burroughes, J. H.; Cacialli, F.

    2003-05-01

    The electronic nature of metal-semiconductor contacts is a fundamental issue in the understanding of semiconductor device physics, because such contacts control charge injection, and therefore play a major role in determining the electron/hole population in the semiconductor itself. This role is particularly important for organic semiconductors as they are generally used in their pristine, undoped form. Here, we review our progress in the understanding of the energy level line-up in finished, blue-emitting, polyfluorene-based light-emitting diodes, which exploit LiF and CsF thin films in combination with Ca and Al to obtain cathodes with low injection barriers. We have used electroabsorption measurements, as they allow the noninvasive determination of the built-in potential when changing the cathode. This provides precious experimental information on the alteration of the polymer/cathode interfacial energy level line-up. The latter is found to depend strongly on the electrode work function. Thus, the Schottky-Mott model for the energy level alignment is found to be a better first-order approximation than those models where strong pinning or large interface dipoles determine the alignment (e.g., Bardeen model), except for electrodes that extensively react with the polymer, and introduce deep gap states. In addition, we show results that validate the approximation of rigid tilting of polymer energy levels with bias (for biases for which no significant injection of carriers occurs). To investigate further the consequences of the electronic line-up on device operation, we complemented the electroabsorption measurements with characterization of the emissive and transport properties of the light-emitting diodes, and confirmed that the cathodic barrier lowering in CsF/Ca/Al and LiF/Ca/Al electrodes leads to the best improvements in electron injection. We found that luminance and overall current are greatly affected by the barrier-reducing cathodes, indicating a truly

  5. Molecular Electronics

    NASA Astrophysics Data System (ADS)

    Petty, Michael

    The prospects of using organic materials in electronics and optoelectronics applications have attracted scientists and technologists since the 1970s. This field has become known as molecular electronics. Some successes have already been achieved, for example the liquid-crystal display. Other products such as organic light-emitting displays, chemical sensors and plastic transistors are developing fast. There is also a keen interest in exploiting technologies at the molecular scale that might eventually replace silicon devices. This chapter provides some of the background physics and chemistry to the interdisciplinary subject of molecular electronics. A review of some of the possible application areas for organic materials is presented and some speculation is provided regarding future directions.

  6. Electron tube

    DOEpatents

    Suyama, Motohiro; Fukasawa, Atsuhito; Arisaka, Katsushi; Wang, Hanguo

    2011-12-20

    An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic silica, and a side tube portion having one end connected to the face plate portion and the other end connected to the stem portion and made of synthetic silica; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the photoelectric surface, and made of synthetic silica; and an electron detector arranged on the projection portion, for detecting electrons from the photoelectric surface, and made of silicon.

  7. Electronic tongue.

    PubMed

    Toko, K

    1998-09-15

    A taste sensor with global selectivity is composed of several kinds of lipid/polymer membranes for transforming information of taste substances into an electric signal. The output of this electronic tongue shows different patterns for chemical substances which have different taste qualities, such as saltiness and sourness. Amino acids can be classified into several groups according to their own tastes from sensor outputs. The taste of foodstuffs such as beer, sake, coffee, mineral water, milk and vegetables can be discussed quantitatively using the electronic tongue, which provides the objective scale for the human sensory expression. PMID:9828364

  8. Electronic system

    DOEpatents

    Robison, G H; Dickson, J F

    1960-11-15

    An electronic system is designed for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. The system comprises separate input means electrically associated with the events under observation an electronic channel associated with each input means, including control means and indicating means; timing means adapted to apply a signal from the input means after a predetermined time to the control means to deactivate each of the channels; and means for resetting the system to its initial condition after the observation of each group of events. (D.L.C.)

  9. ELECTRONIC SYSTEM

    DOEpatents

    Robison, G.H. et al.

    1960-11-15

    An electronic system is described for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. It is comprised of separate input means electrically associated with the events under observation: an electronic channel associated with each input means including control means and indicating means; timing means associated with each of the input means and the control means and adapted to derive a signal from the input means and apply it after a predetermined time to the control means to effect deactivation of each of the channels; and means for resetting the system to its initial condition after observation of each group of events.

  10. Electron Impedances

    SciTech Connect

    P Cameron

    2011-12-31

    It is only recently, and particularly with the quantum Hall effect and the development of nanoelectronics, that impedances on the scale of molecules, atoms and single electrons have gained attention. In what follows the possibility that characteristic impedances might be defined for the photon and the single free electron is explored is some detail, the premise being that the concepts of electrical and mechanical impedances are relevant to the elementary particle. The scale invariant quantum Hall impedance is pivotal in this exploration, as is the two body problem and Mach's principle.