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Sample records for electronic gap-driven metal-semiconductor

  1. Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

    PubMed Central

    Shakhvorostov, Dmitry; Nistor, Razvan A.; Krusin-Elbaum, Lia; Martyna, Glenn J.; Newns, Dennis M.; Elmegreen, Bruce G.; Liu, Xiao-hu; Hughes, Zak E.; Paul, Sujata; Cabral, Cyril; Raoux, Simone; Shrekenhamer, David B.; Basov, Dimitri N.; Song, Young; Müser, Martin H.

    2009-01-01

    Phase-change materials are functionally important materials that can be thermally interconverted between metallic (crystalline) and semiconducting (amorphous) phases on a very short time scale. Although the interconversion appears to involve a change in local atomic coordination numbers, the electronic basis for this process is still unclear. Here, we demonstrate that in a nearly vacancy-free binary GeSb system where we can drive the phase change both thermally and, as we discover, by pressure, the transformation into the amorphous phase is electronic in origin. Correlations between conductivity, total system energy, and local atomic coordination revealed by experiments and long time ab initio simulations show that the structural reorganization into the amorphous state is driven by opening of an energy gap in the electronic density of states. The electronic driving force behind the phase change has the potential to change the interconversion paradigm in this material class. PMID:19549858

  2. Photoinduced electron transfer from phycoerythrin to colloidal metal semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Kathiravan, A.; Chandramohan, M.; Renganathan, R.; Sekar, S.

    2009-04-01

    Phycoerythrin is a water soluble pigment which absorbs in the visible region at 563 nm. The interaction of phycoerythrin with colloidal metal semiconductors was studied by absorption, FT-IR and fluorescence spectroscopy. Phycoerythrin adsorbed strongly on the surface of TiO 2 nanoparticles, the apparent association constant for the association between colloidal metal-TiO 2 nanoparticles and phycoerythrin was determined from fluorescence quenching data. The free energy change (Δ Get) for electron transfer process has been calculated by applying Rehm-Weller equation.

  3. Monte Carlo calculations for metal-semiconductor hot-electron injection via tunnel-junction emission

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Narayanamurti, V.

    2005-01-01

    We present a detailed description of a scheme to calculate the injection current for metal-semiconductor systems using tunnel-junction electron emission. We employ a Monte Carlo framework for integrating over initial free-electron states in a metallic emitter and use interfacial scattering at the metal-semiconductor interface as an independent parameter. These results have implications for modeling metal-base transistors and ballistic electron emission microscopy and spectroscopy.

  4. Localized Electron States Near a Metal-SemiconductorNanocontact

    SciTech Connect

    Demchenko, Denis O.; Wang, Lin-Wang

    2007-04-25

    The electronic structure of nanowires in contact withmetallic electrodes of experimentally relevant sizes is calculated byincorporating the electrostatic polarization potential into the atomisticsingle particle Schrodinger equation. We show that the presence of anelectrode produces localized electron/hole states near the electrode, aphenomenon only exhibited in nanostructures and overlooked in the past.This phenomenon will have profound implications on electron transport insuch nanosystems. We calculate several electrode/nanowire geometries,with varying contact depths and nanowire radii. We demonstrate the changein the band gap of up to 0.5 eV in 3 nm diameter CdSe nanowires andcalculate the magnitude of the applied electric field necessary toovercome the localization.

  5. Surface plasmon assisted hot electron collection in wafer-scale metallic-semiconductor photonic crystals.

    PubMed

    Chou, Jeffrey B; Li, Xin-Hao; Wang, Yu; Fenning, David P; Elfaer, Asmaa; Viegas, Jaime; Jouiad, Mustapha; Shao-Horn, Yang; Kim, Sang-Gook

    2016-09-01

    Plasmon assisted photoelectric hot electron collection in a metal-semiconductor junction can allow for sub-bandgap optical to electrical energy conversion. Here we report hot electron collection by wafer-scale Au/TiO2 metallic-semiconductor photonic crystals (MSPhC), with a broadband photoresponse below the bandgap of TiO2. Multiple absorption modes supported by the 2D nano-cavity structure of the MSPhC extend the photon-metal interaction time and fulfill a broadband light absorption. The surface plasmon absorption mode provides access to enhanced electric field oscillation and hot electron generation at the interface between Au and TiO2. A broadband sub-bandgap photoresponse centered at 590 nm was achieved due to surface plasmon absorption. Gold nanorods were deposited on the surface of MSPhC to study localized surface plasmon (LSP) mode absorption and subsequent injection to the TiO2 catalyst at different wavelengths. Applications of these results could lead to low-cost and robust photo-electrochemical applications such as more efficient solar water splitting. PMID:27607726

  6. Hot-electron-based solar energy conversion with metal-semiconductor nanodiodes.

    PubMed

    Lee, Young Keun; Lee, Hyosun; Lee, Changhwan; Hwang, Euyheon; Park, Jeong Young

    2016-06-29

    Energy dissipation at metal surfaces or interfaces between a metal and a dielectric generally results from elementary excitations, including phonons and electronic excitation, once external energy is deposited to the surface/interface during exothermic chemical processes or an electromagnetic wave incident. In this paper, we outline recent research activities to develop energy conversion devices based on hot electrons. We found that photon energy can be directly converted to hot electrons and that hot electrons flow through the interface of metal-semiconductor nanodiodes where a Schottky barrier is formed and the energy barrier is much lower than the work function of the metal. The detection of hot electron flow can be successfully measured using the photocurrent; we measured the photoyield of photoemission with incident photons-to-current conversion efficiency (IPCE). We also show that surface plasmons (i.e. the collective oscillation of conduction band electrons induced by interaction with an electromagnetic field) are excited on a rough metal surface and subsequently decay into secondary electrons, which gives rise to enhancement of the IPCE. Furthermore, the unique optical behavior of surface plasmons can be coupled with dye molecules, suggesting the possibility for producing additional channels for hot electron generation. PMID:27168177

  7. Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

    SciTech Connect

    Lin, Keng-Hua; Strachan, Alejandro

    2015-07-21

    Motivated by significant interest in metal-semiconductor and metal-insulator interfaces and superlattices for energy conversion applications, we developed a molecular dynamics-based model that captures the thermal transport role of conduction electrons in metals and heat transport across these types of interface. Key features of our model, denoted eleDID (electronic version of dynamics with implicit degrees of freedom), are the natural description of interfaces and free surfaces and the ability to control the spatial extent of electron-phonon (e-ph) coupling. Non-local e-ph coupling enables the energy of conduction electrons to be transferred directly to the semiconductor/insulator phonons (as opposed to having to first couple to the phonons in the metal). We characterize the effect of the spatial e-ph coupling range on interface resistance by simulating heat transport through a metal-semiconductor interface to mimic the conditions of ultrafast laser heating experiments. Direct energy transfer from the conduction electrons to the semiconductor phonons not only decreases interfacial resistance but also increases the ballistic transport behavior in the semiconductor layer. These results provide new insight for experiments designed to characterize e-ph coupling and thermal transport at the metal-semiconductor/insulator interfaces.

  8. Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

    SciTech Connect

    Hegde, Ganesh Chris Bowen, R.

    2014-08-04

    The effect of realistic metal electronic structure on the lower limit of resistivity in [100] oriented n-Si is investigated using full band Density Functional Theory and Semi-Empirical Tight Binding calculations. It is shown that the “ideal metal” assumption may fail in some situations and, consequently, underestimate the lower limit of contact resistivity in n-Si by at least an order of magnitude at high doping concentrations. The mismatch in transverse momentum space in the metal and the semiconductor, the so-called “valley filtering effect,” is shown to be sensitive to the details of the transverse boundary conditions for the unit cells used. The results emphasize the need for explicit inclusion of the metal atomic and electronic structure in the atomistic modeling of transport across metal-semiconductor contacts.

  9. Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Han, Jaeheon

    2011-12-01

    Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

  10. Electron-phonon coupling and thermal conductance at a metal-semiconductor interface: First-principles analysis

    SciTech Connect

    Sadasivam, Sridhar; Fisher, Timothy S.; Waghmare, Umesh V.

    2015-04-07

    The mechanism of heat transfer and the contribution of electron-phonon coupling to thermal conductance of a metal-semiconductor interface remains unclear in the present literature. We report ab initio simulations of a technologically important titanium silicide (metal)–silicon (semiconductor) interface to estimate the Schottky barrier height, and the strength of electron-phonon and phonon-phonon heat transfer across the interface. The electron and phonon dispersion relations of TiSi{sub 2} with C49 structure and the TiSi{sub 2}-Si interface are obtained using first-principles calculations within the density functional theory framework. These are used to estimate electron-phonon linewidths and the associated Eliashberg function that quantifies coupling. We show that the coupling strength of electrons with interfacial phonon modes is of the same order of magnitude as coupling of electrons to phonon modes in the bulk metal, and its contribution to electron-phonon interfacial conductance is comparable to the harmonic phonon-phonon conductance across the interface.

  11. Geometric and electronic structure of mixed metal-semiconductor clusters from global optimization.-

    NASA Astrophysics Data System (ADS)

    Hagelberg, Frank; Wu, Jianhua

    2006-03-01

    In addition to pure metal and semiconductor clusters, hybrid species that contain both types of constituents occur at the metal-semiconductor interface. Thus, clusters of the form Cu(x)Si(y) were detected by mass spectrometry [1]. In this contribution, the geometric and energetic features of Me(m)Si(7-m) (Me=Cu and Li) clusters are discussed. The choice of these systems is motivated by the structural similarity of the pure Si(7), Li(7), and Cu(7) systems which all stabilize in D(5h) symmetry. On the other hand, Li and Cu, representing the alkali group (IA) and the noble metal group (IB) of the periodic system, are expected to display strongly differing behavior when integrated into a Si(n) cluster, resulting in different ground state geometries for the cases Me = Li and Me = Cu. Addressing this problem by means of geometry optimization requires, in view of the large number of possible atomic permutations for Me(m)Si(7-m) with 0 < m < 7, the use of a global search algorithm. Equilibrium geometries are obtained by simulated annealing within the Nose' thermostat frame. It is observed that Cu(m)Si(7-m) clusters with m < 6 tend towards ground state geometries derived from the D(5h) prototype. For Li(m)Si(7-m), the Li(m) subsystem is found to adsorb on the framework of the Si(7-m) dianion. [1] J.J. Scherer, J.B. Pau, C.P. Collier, A. O'Keefe, and R.J. Saykally, J. Chem. Phys. 103, 9187 (1995).

  12. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application

    PubMed Central

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  13. Strong and highly asymmetrical optical absorption in conformal metal-semiconductor-metal grating system for plasmonic hot-electron photodetection application.

    PubMed

    Wu, Kai; Zhan, Yaohui; Zhang, Cheng; Wu, Shaolong; Li, Xiaofeng

    2015-01-01

    We propose an architecture of conformal metal-semiconductor-metal (MSM) device for hot-electron photodetection by asymmetrical alignment of the semiconductor barrier relative to the Fermi level of metals and strong energy localization through plasmonic resonances. Compared with the conventional grating design, the multi-layered grating system under conformal configuration is demonstrated to possess both optical and electrical advantages for high-sensitivity hot-electron photodetection. Finite-element simulation reveals that a strong and highly asymmetrical optical absorption (top metal absorption >99%) can be realized under such a conformal arrangement. An analytical probability-based electrical simulation verifies the strong unidirectional photocurrent, by taking advantage of the extremely high net absorption and a low metal/semiconductor barrier height, and predicts that the corresponding photoresponsivity can be ~3 times of that based on the conventional grating design in metal-insulator-metal (MIM) configuration. PMID:26387836

  14. Evidence of Momentum Conservation at a Nonepitaxial Metal/Semiconductor Interface Using Ballistic Electron Emission Microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.

    1996-01-01

    Ballistic-Electron-Emission Microscopy (BEEM) spectroscopy has been performed on Au/Si(111) structures as a function of Au thickness and temperature. At 77 K a direct signature of parallel momentum conservation at the Au/Si interface is observed in the BEEM spectra. The variation in spectral shape with both Au thickness and temperature places restrictions on allowable values of inelastic and elastic mean-free paths in the metal, and also requires the presence of multiple electron passes within the Au layer. An independent indication of multiple reflections is directly observed in the attenuation of BEEM current with Au thickness.

  15. Detection of Infrared Photons Using the Electronic Stress in Metal-Semiconductor Interfaces

    SciTech Connect

    Datskos, P.G.; Datskou, I.; Egert, C.M.; Rjic, S.

    1999-04-05

    It is well known that the work function of metals decreases when they are placed in a nonpolar liquid. A similar decrease occurs when the metal is placed into contact with a semiconductor forming a Schottky barrier. We report on a new method for detecting photons using the stress caused by photo-electrons emitted from a metal film surface in contact with a semiconductor microstructure. The photoelectrons diffuse into the microstructure and produce an electronic stress. The photon detection results from the measurement of the photo-induced bending of the microstructure. Internal photoemission has been used in the past to detect photons, however, in those cases the detection was accomplished by measuring the current due to photoelectrons and not due to electronic stress. Small changes in position (displacement) of microstructures are routinely measured in atomic force microscopy (AFM) where atomic imaging of surfaces relies on the measurement of small changes (< l0{sup -9} m) in the bending of microcantilevers. In the present work we studied the photon response of Si microcantilevers coated with a thin film of Pt. The Si microcantilevers were 500 nm thick and had a 30 nm layer of Pt. Photons with sufficient energies produce electrons from the platinum-silicon interface which diffuse into the Si and produce an electronic stress. Since the excess charge carriers cause the Si microcantilever to contract in length but not the Pt layer, the bimaterial microcantilever bends. In our present studies we used the optical detection technique to measure the photometric response of Pt-Si microcantilevers as a function of photon energy. The charge carriers responsible for the photo-induced stress in Si, were produced via internal photoemission using a diode laser with wavelength {lambda} = 1550 nm.

  16. Super-Resolution Mapping of Photogenerated Electron and Hole Separation in Single Metal-Semiconductor Nanocatalysts

    SciTech Connect

    Ha, Ji Won; Ruberu, T. Purnima A.; Han, Rui; Dong, Bin; Vela, Javier; Fang, Ning

    2014-01-12

    Metal–semiconductor heterostructures are promising visible light photocatalysts for many chemical reactions. Here, we use high-resolution superlocalization imaging to reveal the nature and photocatalytic properties of the surface reactive sites on single Au–CdS hybrid nanocatalysts. We experimentally reveal two distinct, incident energy-dependent charge separation mechanisms that result in completely opposite photogenerated reactive sites (e– and h+) and divergent energy flows on the hybrid nanocatalysts. We find that plasmon-induced hot electrons in Au are injected into the conduction band of the CdS semiconductor nanorod. The specifically designed Au-tipped CdS heterostructures with a unique geometry (two Au nanoparticles at both ends of each CdS nanorod) provide more convincing high-resolution single-turnover mapping results and clearly prove the two charge separation mechanisms. Engineering the direction of energy flow at the nanoscale can provide an efficient way to overcome important challenges in photocatalysis, such as controlling catalytic activity and selectivity. These results bear enormous potential impact on the development of better visible light photocatalysts for solar-to-chemical energy conversion.

  17. Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

    SciTech Connect

    Ren, F.; Lee, J.W.; Abernathy, C.R.; Pearton, S.J.; Constantine, C.; Barratt, C.; Shul, R.J.

    1997-07-01

    The effects of Ar plasma exposure on transconductance, channel sheet resistance, output resistance, and gate contact ideality factor of GaAs metal-semiconductor field-effect transistors (MESFETs) were investigated using two different high-density plasma sources, namely inductively coupled plasma and electron resonance plasma. Ion-induced damage is found to be reduced at moderate source powers ({approximately}200W) because of the reduction in cathode dc self-bias and hence ion energy, but at higher source powers the increase in ion flux produces significant deterioration of the device performance. Careful attention must be paid to both ion flux and ion energy in order to minimize ion-induced damage. Due to their relatively low channel doping levels, MESFETs are found to be more sensitive to plasma damage than devices with very heavily doped component layers such as heterojunction bipolar transistors. {copyright} {ital 1997 American Vacuum Society.}

  18. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

    PubMed

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

  19. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

    PubMed Central

    Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

  20. Anomalous tunneling in carbon/alkane/TiO(2)/gold molecular electronic junctions: energy level alignment at the metal/semiconductor interface.

    PubMed

    Yan, Haijun; McCreery, Richard L

    2009-02-01

    Carbon/TiO(2)/gold electronic junctions show slightly asymmetric electronic behavior, with higher current observed in current density (J)/voltage (V) curves when carbon is biased negative with respect to the gold top contact. When a approximately 1-nm-thick alkane film is deposited between the carbon and TiO(2), resulting in a carbon/alkane/TiO(2)/gold junction, the current increases significantly for negative bias and decreases for positive bias, thus creating a much less symmetric J/V response. Similar results were obtained when SiO(2) was substituted for the alkane layer, but Al(2)O(3) did not produce the effect. The observation that, by the addition of an insulating material between carbon and TiO(2), the junction becomes more conductive is unexpected and counterintuitive. Kelvin probe measurements revealed that while the apparent work function of the pyrolyzed photoresist film electrode is modulated by surface dipoles of different surface-bound molecular layers, the anomalous effect is independent of the direction of the surface dipole. We propose that by using a nanometer-thick film with a low dielectric constant as an insertion layer, most of the applied potential is dropped across this thin film, thus permitting alignment between the carbon Fermi level and the TiO(2) conduction band. Provided that the alkane layer is sufficiently thin, electrons can directly tunnel from carbon to the TiO(2) conduction band. Therefore, the electron injection barrier at the carbon/TiO(2) interface is effectively reduced by this energy-level alignment, resulting in an increased current when carbon is biased negative. The modulation of injection barriers by a low-kappa molecular layer should be generally applicable to a variety of materials used in micro- and nanoelectronic fabrication. PMID:20353235

  1. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    We study recently reported drain current Id-drain voltage Vd characteristics of a carbon nanotube metal semiconductor diode device with the gate voltage Vg applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative Vg blocked Id more effectively in the negative Vd region, resulting in the rectifying Id-Vd characteristics, and that (2) positive Vg allowed Id in the both Vd polarities, resulting in the non-rectifying characteristics. The negative Vd was the Schottky reverse direction, judging from the negligible Id behavior for a wide region of -4 V less than Vd less than 0 V, with Vg = -4 V. Such negative Vg would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (EF). With larger negative Vg, the experiment showed that the Schottky forward direction (Vd greater than 0) had a smaller turn-on voltage and the Schottky reverse direction (Vd less than 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when EF is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when EF is lowered.

  2. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  3. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  4. Metal-semiconductor transition of graphene nanoribbons with different addends

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.; Dai, B.; Liu, J. S.; Yang, G. W.

    2012-02-01

    Using a LCAO method, which is based on spinless sp3 scheme, we have studied the electronic properties of graphene nanoribbons with zigzag edges (ZGNRs) terminated partially by methylene groups. Metal-semiconductor transition is proved when the H atoms at both sides of ZGNRs are partially substituted by methylene groups. Furthermore, when one-third of H atoms are substituted and the distribution of methylenes is symmetric, the band gap comes to about 0.59 eV, which is the widest energy gap in this work. Otherwise, when the addends at both sides are of asymmetric distribution, a band gap of only 0.21 eV is obtained. These results suggest that the addends at the edge of ZGNRs play an important role in modifying the electronic properties.

  5. Analysis of Carbon Nanotube Metal-Semiconductor Diode Device

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2001-01-01

    We study recently reported drain current I(sub d)-drain voltage V(sub d) characteristics of a carbon nanotube metal-semiconductor diode device with the gate voltage V(sub g) applied to modulate the carrier density in the nanotube. The diode was kink-shaped at the metal-semiconductor interface. It was shown that (1) larger negative V(sub g) blocked I(sub d) more effectively in the negative V(sub d) region, resulting in the rectifying I(sub d)-V(sub d) characteristics, and that (2) positive V(sub g) allowed I(sub d) in the both V(sub d) polarities, resulting in the non-rectifying characteristics. The negative V(sub d) was the Schottky reverse direction, judging from the negligible I(sub d) behavior for a wide region of -4 V (is less than) V(sub d) (is less than) 0 V, with V(sub g) = -4 V. Such negative V(sub g) would attract positive charges from the metallic electrodes (charge reservoir) to the nanotube and lower the nanotube Fermi energy (E(sub F)). With larger negative V(sub g), the experiment showed that the Schottky forward direction (V(sub d) (is greater than) 0) had a smaller turn-on voltage and the Schottky reverse direction (V(sub d) (is less than) 0) was more resistant to the tunneling breakdown. Therefore, the majority carriers in the transport would be electrons since they can see a lower tunneling barrier (shallower built-in potential) in the forward direction when E(sub F) is lowered, and a thicker tunneling barrier (Schottky barrier) in the reverse direction due to the reduction in the electron density when E(sub F) is lowered.

  6. Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

    PubMed

    Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

    2012-08-28

    Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis. PMID:22792998

  7. Metal-semiconductor hybrid thin films in field-effect transistors

    SciTech Connect

    Okamura, Koshi Dehm, Simone; Hahn, Horst

    2013-12-16

    Metal-semiconductor hybrid thin films consisting of an amorphous oxide semiconductor and a number of aluminum dots in different diameters and arrangements are formed by electron beam lithography and employed for thin-film transistors (TFTs). Experimental and computational demonstrations systematically reveal that the field-effect mobility of the TFTs enhances but levels off as the dot density increases, which originates from variations of the effective channel length that strongly depends on the electric field distribution in a transistor channel.

  8. Metal Semiconductor Heterostructures for Photocatalytic Conversion of Light Energy.

    PubMed

    Dutta, Sumit Kumar; Mehetor, Shyamal Kumar; Pradhan, Narayan

    2015-03-19

    For fast separation of the photogenerated charge carriers, metal semiconductor heterostructures have emerged as one of the leading materials in recent years. Among these, metal Au coupled with low bandgap semiconductors remain as ideal materials where both can absorb the solar light in the visible region. It is also established that on excitation, the plasmonic state of gold interacts with excited state of semiconductor and helps for the delocalization of the photogenerated electrons. Focusing these materials where electron transfer preferably occurs from semiconductor to metal Au on excitation, in this Perspective, we report the latest developments in the synthetic chemistry in designing such nano heterostructures and discuss their photocatalytic activities in organic dye degradation/reduction and/or photocatalytic water splitting for generation of hydrogen. Among these, materials such as Au-CZTS, Au-SnS, Au-Bi2S3, Au-ZnSe, and so forth are emphasized, and their formation chemistry as well as their photocatalytic activities are discussed in this Perspective. PMID:26262849

  9. Fabrication and characterization of metal-semiconductor-metal nanorod using template synthesis

    SciTech Connect

    Kim, Kyohyeok; Kwon, Namyong; Hong, Junki; Chung, Ilsub

    2009-07-15

    The authors attempted to fabricate and characterize one dimensional metal-semiconductor-metal (MSM) nanorod using a template. Cadmium selenide (CdSe) and polypyrrole (Ppy) were chosen as n-type and p-type semiconductor materials, respectively, whereas Au was chosen as a metal electrode. The fabrication of the nanorod was achieved by ''template synthesis'' method using polycarbonate membrane. The structure of the fabricated nanorod was analyzed using scanning electron microscopy and energy dispersive spectroscopy. In addition, the electrical properties of MSM nanorods were characterized using scanning probe microscopy (Seiko Instruments, SPA 300 HV) by probing with a conductive cantilever. I-V characteristics as a function of the temperature give the activation energy, as well as the barrier height of a metal-semiconductor contact, which is useful to understand the conduction mechanism of MSM nanorods.

  10. Nanoscale High-Speed Metal-Semiconductor Photodetectors

    NASA Astrophysics Data System (ADS)

    Liu, Mark Yue

    This thesis work studies the design, fabrication and characterization of nanoscale high-speed metal-semiconductor -metal (MSM) photodetectors. Smallest, fastest MSM photodetectors will be presented. Important design issues such as carrier transit time, carrier recombination time, light penetration depth, and device parasitic elements are investigated. Carrier transport in nanoscale detectors is studied using a Monte Carlo method. Based on the theoretical and experimental data, scaling rules for high-speed operation of MSM photodetectors are proposed. Nanoscale MSM photodetectors are fabricated using a custom-built ultra-high-resolution electron beam lithography system and a lift-off process. Different resist schemes and accurate dose control are essential to produce desired nanoscale structures. MSM photodetectors with finger spacing and width as small as 25 nm are fabricated on GaAs, Si and silicon-on-insulator (SOI) substrate. To our knowledge, they represent the smallest ever reported to date. Sub-picosecond characterization of the detectors' impulse response is performed using an electro-optic system and a femtosecond laser. The fastest MSM photodetectors have a response time and a 3-dB bandwidth of, respectively, 0.87 ps and 510 GHz on low-temperature-grown GaAs, 1.5 ps and 300 GHz on bulk GaAs, 3.7 ps and 110 GHz on bulk Si, and 3.2 ps and 140 GHz on SOI. They are, to the best of our knowledge, the fastest photodetectors of their kind. MSM photodetectors on GaAs and Si can also be used at 1.3 to 1.55 μm wavelength range, based on the internal emission of carriers at the metal-semiconductor interface. The performance of the GaAs and Si detector at 1.3 μm wavelength, including the dependence of responsivity on finger size, optical power, and applied bias, will be presented in this thesis. Finally, we will propose a new silicon Fabry-Perot planar waveguide modulator structure consisting of two Bragg mirrors, which are nanoscale trenches in the waveguide

  11. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres

    PubMed Central

    Lin, Jin-Han; Patil, Ranjit A.; Devan, Rupesh S.; Liu, Zhe-An; Wang, Yi-Ping; Ho, Ching-Hwa; Liou, Yung; Ma, Yuan-Ron

    2014-01-01

    We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (EF) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the EF to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters. PMID:25382186

  12. Practical anti-reflection coating for metal semiconductor solar cells

    NASA Technical Reports Server (NTRS)

    Yeh, Y.-C. M.; Stirn, R. J.

    1975-01-01

    The metal-semiconductor solar cell is a possible candidate for converting solar to electrical energy for terrestrial application. A method is given for obtaining optical parameters of practical antireflection coatings for the metal-semiconductor solar cell. This method utilizes the measured refractive index obtained from ellipsometry since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculation of optical parameters for Ta2O5 antireflection coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.

  13. Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces

    NASA Astrophysics Data System (ADS)

    Yi, W.; Kaya, I. I.; Altfeder, I. B.; Appelbaum, I.; Chen, D. M.; Narayanamurti, V.

    2005-06-01

    Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au /GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.

  14. Fabrication of Metal-Semiconductor Heterostructures in Silicon Nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Luyun

    The increasing demand for fossil fuels and the need to reduce greenhouse gases require clean energy sources and more efficient utilization of energy. Thermoelectric materials provide a means toward achieving these goals since they convert heat, including waste heat, directly into an electric potential difference. Metal-semiconductor heterostructures can work as Schottky barriers in thermoelectric materials to increase thermoelectric efficiency. In this project, nickel silicide phases were introduced into silicon nanowires (SiNWs) to build up the Schottky barrier. SiNW arrays were fabricated using a metal-assisted chemical process, creating SiNWs about 200 nm in diameter and 30im in length. Different methods were adopted for nickel deposition: electroless nickel deposition, electro nickel deposition, E-beam deposition, and thermal evaporation. The samples were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that depositing nickel on SiNWs in an aqueous solution without electricity is a simple way to deposit nickel particles, and the morphology of nickel particles depends on the concentration of the deposition bath. However, an aqueous solution will cause oxidation of the SiNWs and hinder the formation of nickel silicide. To solve this problem, depositing nickel on SiNWs in organic solutions inside an oxygen-free glove box is a way to prevent oxidation, and nickel can diffuse into silicon substrates easily via annealing when there no oxidation layer on the surface of SiNWs. The dominant phase formed in these samples is NiSi2 after being annealed at 650°C for one hour in a tube furnace.

  15. Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics

    SciTech Connect

    Urbanczyk, Adam; Otten, Frank W. M. van; Noetzel, Richard

    2011-06-13

    We demonstrate self-alignment of epitaxial Ag nanocrystals on top of low-density near-surface InAs quantum dots (QDs) grown by molecular beam epitaxy. The Ag nanocrystals support a surface plasmon resonance that can be tuned to the emission wavelength of the QDs. Photoluminescence measurements of such hybrid metal-semiconductor nanostructures reveal large enhancement of the emission intensity. Our concept of epitaxial self-alignment enables the integration of plasmonic functionality with electronic and photonic semiconductor devices operating down to the single QD level.

  16. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1994-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  17. Circular electrode geometry metal-semiconductor-metal photodetectors

    NASA Technical Reports Server (NTRS)

    Mcadoo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

    1995-01-01

    The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

  18. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  19. Interface Schottky barrier engineering via strain in metal-semiconductor composites.

    PubMed

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-21

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures. PMID:26511292

  20. One-dimensional transport in hybrid metal-semiconductor nanotube systems

    NASA Astrophysics Data System (ADS)

    Gelin, M. F.; Bondarev, I. V.

    2016-03-01

    We develop an electron transport theory for the hybrid system of a semiconducting carbon nanotube that encapsulates a one-atom-thick metallic wire. The theory predicts Fano resonances in electron transport through the system, whereby the interaction of electrons on the wire with nanotube plasmon generated near fields blocks some of the wire transmission channels to open up the new coherent plasmon-mediated channel in the nanotube forbidden gap outside the wire transmission band. Such a channel makes the entire hybrid system transparent in the energy domain where neither wire nor nanotube is individually transparent. This effect can be used to control and optimize charge transfer in hybrid nanodevices built on metal-semiconductor nanotube systems.

  1. New Concentric Electrode Metal-Semiconductor-Metal Photodetectors

    NASA Technical Reports Server (NTRS)

    Towe, Elias

    1996-01-01

    A new metal-semiconductor-metal (MSM) photodetector geometry is proposed. The new device has concentric metal electrodes which exhibit a high degree of symmetry and a design flexibility absent in the conventional MSM device. The concentric electrodes are biased to alternating potentials as in the conventional interdigitated device. Because of the high symmetry configuration, however, the new device also has a lower effective capacitance. This device and the conventional MSM structure are analyzed within a common theoretical framework which allows for the comparison of the important performance characteristics.

  2. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

    SciTech Connect

    Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

    2014-11-24

    Nitrogen-doped Mg{sub 0.12}Zn{sub 0.88}O nanocrystalline thin film was grown on c-plane sapphire substrate. Asymmetric Ni/Au and Ti/Au Schottky contacts and symmetric Ni/Au contacts were deposited on the thin film to form metal-semiconductor-metal (MSM) laser devices. Current-voltage, photocurrent, and electroluminescence characterizations were performed. Evident random lasing with a threshold current of ∼36 mA is demonstrated only from the asymmetric MSM device. Random lasing peaks are mostly distributed between 340 and 360 nm and an output power of 15 nW is measured at 43 mA injection current. The electron affinity difference between the contact metal and Mg{sub 0.12}Zn{sub 0.88}O:N layer plays an important role for electron and hole injection and subsequent stimulated random lasing.

  3. Thermoelectric properties of HfN/ScN metal/semiconductor superlattices: a first-principles study

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Sands, Timothy D.; Waghmare, Umesh V.

    2012-10-01

    Nitride-based metal/semiconductor superlattices are promising candidates for high-temperature thermoelectric applications. Motivated by recent experimental studies, we perform first-principles density functional theory based analysis of electronic structure, vibrational spectra and transport properties of HfN/ScN metal/semiconductor superlattices for their potential applications in thermoelectric and thermionic energy conversion devices. Our results suggest (a) an asymmetric linearly increasing density of states and (b) flattening of conduction bands along the cross-plane Γ-Z direction near the Fermi energy of these superlattices, as is desirable for a large power factor. The n-type Schottky barrier height of 0.13 eV at the metal/semiconductor interface is estimated by the microscopic averaging technique of the electrostatic potential. Vibrational spectra of these superlattices show softening of transverse acoustic phonon modes and localization of ScN phonons in the vibrational energy gap between the HfN (metal) and ScN (semiconductor) states. Our estimates of lattice thermal conductivity within the Boltzmann transport theory suggests up to two orders of magnitude reduction in the cross-plane lattice thermal conductivity of these superlattices compared to their individual bulk components.

  4. General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

    NASA Astrophysics Data System (ADS)

    Stradi, Daniele; Martinez, Umberto; Blom, Anders; Brandbyge, Mads; Stokbro, Kurt

    2016-04-01

    Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex physics governing their operating principles. Here we introduce an atomistic approach based on density functional theory and nonequilibrium Green's function, which includes all the relevant ingredients required to model realistic metal-semiconductor interfaces and allows for a direct comparison between theory and experiments via I -Vbias curve simulations. We apply this method to characterize an Ag/Si interface relevant for photovoltaic applications and study the rectifying-to-Ohmic transition as a function of the semiconductor doping. We also demonstrate that the standard "activation energy" method for the analysis of I -Vbias data might be inaccurate for nonideal interfaces as it neglects electron tunneling, and that finite-size atomistic models have problems in describing these interfaces in the presence of doping due to a poor representation of space-charge effects. Conversely, the present method deals effectively with both issues, thus representing a valid alternative to conventional procedures for the accurate characterization of metal-semiconductor interfaces.

  5. (Hafnium zirconium) nitride/scandium nitride metal/semiconductor superlattices for thermionic energy conversion

    NASA Astrophysics Data System (ADS)

    Schroeder, Jeremy Leroy

    Nitride metal/semiconductor superlattices are a promising materials system for high temperature (>800K) thermionic energy conversion devices. This dissertation specifically investigates various properties of the (HfxZr 1-x)N/ScN metal/semiconductor materials system and introduces a novel approach for fabricating bulk-like thermoelectric devices. (HfxZr 1-x)N/ScN superlattices were deposited on magnesium oxide, sapphire, and silicon substrates by reactive DC magnetron sputtering and characterized by field emission scanning electron microscopy, high resolution x-ray diffraction, and transmission electron microscopy. Magnesium oxide and sapphire substrates produce epitaxial superlattice, whereas films deposited on silicon are characterized as textured-polycrystalline with superlattices within each grain. In addition to thin film characterization, a novel laminate approach was developed that allows for bulk-like devices to be fabricated from nanostructured superlattices, bridging the nano/micro divide. The laminate approach provides a means to simultaneously characterize all of the thermoelectric parameters, (Seebeck coefficient, electrical conductivity, thermal conductivity) of superlattices via a Z-meter characterization system and also provides a scalable process for industrial applications. Parasitic analysis of laminates revealed that low electrical contact resistivity contacts (<2·10-8 Ω-cm 2) are a critical factor for successful implementation of laminate metal/semiconductor superlattice devices. Electrical contact resistivity values for various contact schemes were characterized by the transfer length method, with values as low as 4·10-8 Ω-cm2 achieved. The high uncertainty in the characterization of contacts with low electrical contact resistivity is a challenging roadblock that can be partially overcome through careful design of the transfer length method pattern. Temperature dependent thermal conductivity analysis of HfN/ScN, (Hf 0.5Zr0.5)N/ScN, and Zr

  6. Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions

    SciTech Connect

    Takhar, Kuldeep; Meer, Mudassar; Khachariya, Dolar; Ganguly, Swaroop; Saha, Dipankar

    2015-09-15

    Quantization in energy level due to confinement is generally observed for semiconductors. This property is used for various quantum devices, and it helps to improve the characteristics of conventional devices. Here, the authors have demonstrated the quantum size effects in ultrathin metal (Ni) layers sandwiched between two large band-gap materials. The metal work function is found to oscillate as a function of its thickness. The thermionic emission current bears the signature of the oscillating work function, which has a linear relationship with barrier heights. This methodology allows direct observation of quantum oscillations in metals at room temperature using a Schottky diode and electrical measurements using source-measure-units. The observed phenomena can provide additional mechanism to tune the barrier height of metal/semiconductor junctions, which are used for various electronic devices.

  7. Metal/Semiconductor hybrid nanostructures for plasmon-enhanced applications.

    PubMed

    Jiang, Ruibin; Li, Benxia; Fang, Caihong; Wang, Jianfang

    2014-08-20

    Hybrid nanostructures composed of semiconductor and plasmonic metal components are receiving extensive attention. They display extraordinary optical characteristics that are derived from the simultaneous existence and close conjunction of localized surface plasmon resonance and semiconduction, as well as the synergistic interactions between the two components. They have been widely studied for photocatalysis, plasmon-enhanced spectroscopy, biotechnology, and solar cells. In this review, the developments in the field of (plasmonic metal)/semiconductor hybrid nanostructures are comprehensively described. The preparation of the hybrid nanostructures is first presented according to the semiconductor type, as well as the nanostructure morphology. The plasmonic properties and the enabled applications of the hybrid nanostructures are then elucidated. Lastly, possible future research in this burgeoning field is discussed. PMID:24753398

  8. Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

    NASA Astrophysics Data System (ADS)

    Kim, Munho; Seo, Jung-Hun; Yu, Zongfu; Zhou, Weidong; Ma, Zhenqiang

    2016-08-01

    We demonstrate flexible Ge nanomembrane (Ge NM) based metal-semiconductor-metal photodiodes. The effect of uniaxial tensile strain on Ge NM based photodiodes was investigated using bending fixtures. Dark current density is decreased from 21.5 to 4.8 mA/cm2 at 3 V by a tensile strain of 0.42% while photon responsivity is increased from 0.2 to 0.45 A/W at the wavelength of 1.5 μm. Enhanced responsivity is also observed at longer wavelengths up to 1.64 μm. The uniaxial tensile strain effectively reduces the direct bandgap energy of the Ge NM, leading to a shift of the absorption edge toward a longer wavelength.

  9. Interface Schottky barrier engineering via strain in metal-semiconductor composites

    NASA Astrophysics Data System (ADS)

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-01

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

  10. Adjustable metal-semiconductor transition of FeS thin films by thermal annealing

    SciTech Connect

    Fu Ganhua; Polity, Angelika; Volbers, Niklas; Meyer, Bruno K.; Mogwitz, Boris; Janek, Juergen

    2006-12-25

    FeS polycrystalline thin films were prepared on float glass at 500 deg. C by radio-frequency reactive sputtering. The influence of vacuum annealing on the metal-semiconductor transition of FeS films was investigated. It has been found that with the increase of the annealing temperature from 360 to 600 deg. C, the metal-semiconductor transition temperature of FeS films first decreases and then increases, associated with first a reduction and then an enhancement of hysteresis width. The thermal stress is considered to give rise to the abnormal change of the metal-semiconductor transition of the FeS film during annealing.

  11. Multiple percolation tunneling staircase in metal-semiconductor nanoparticle composites

    SciTech Connect

    Mukherjee, Rupam; Huang, Zhi-Feng; Nadgorny, Boris

    2014-10-27

    Multiple percolation transitions are observed in a binary system of RuO{sub 2}-CaCu{sub 3}Ti{sub 4}O{sub 12} metal-semiconductor nanoparticle composites near percolation thresholds. Apart from a classical percolation transition, associated with the appearance of a continuous conductance path through RuO{sub 2} metal oxide nanoparticles, at least two additional tunneling percolation transitions are detected in this composite system. Such behavior is consistent with the recently emerged picture of a quantum conductivity staircase, which predicts several percolation tunneling thresholds in a system with a hierarchy of local tunneling conductance, due to various degrees of proximity of adjacent conducting particles distributed in an insulating matrix. Here, we investigate a different type of percolation tunneling staircase, associated with a more complex conductive and insulating particle microstructure of two types of non-spherical constituents. As tunneling is strongly temperature dependent, we use variable temperature measurements to emphasize the hierarchical nature of consecutive tunneling transitions. The critical exponents corresponding to specific tunneling percolation thresholds are found to be nonuniversal and temperature dependent.

  12. Growth and characterization of metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Henz, J.; Ospelt, M.; Von Känel, H.

    1989-04-01

    Thanks to recent advances in the growth of CoSi 2-layers on Si(111) it has become possible for the first time to fabricate metal/semiconductor superlattices. This is achieved by a combination of solid phase epitaxy (SPE) and molecular beam epitaxy (MBE). We briefly explain the growth of thin ( < 100 Å) type B oriented (i.e. rotated by 180° with respect to the substrate) CoSi 2 layers. We show the effect of the two different surface structures of CoSi 2 on the morphology of the films. Silicon with a reasonable crystal quality can be grown on top of CoSi 2 by using low substrate temperatures for the first few monolayers of growth. We always find the orientation of Si to be the same as the one of the underlying suicide, when the latter is of high quality. Superlattices of CoSi 2 and Si have two periods, one being given by the different materials and the other by the alternating crystal orientations. We show some TEM cross section images as well as first X-ray investigations of these structures.

  13. One-dimensional quantum transport in hybrid metal-semiconductor nanotube systems

    NASA Astrophysics Data System (ADS)

    Gelin, Maxim; Bondarev, Igor

    We study the inter-play between the intrinsic 1D conductance of metallic atomic wires (AWs) and plasmon mediated near-field effects for semiconducting single wall carbon nanotubes (CNs) that encapsulate AWs of finite length. We use the matrix Green's functions formalism to develop an electron transfer theory for such a hybrid quasi-1D metal-semiconductor nanotube system. The theory predicts Fano resonances in electron transmission through the system. That is the AW-CN near-field interaction blocks some of the pristine AW transmission band channels to open up new coherent channels in the CN forbidden gap outside the pristine AW transmission band. This makes the entire hybrid system transparent in the energy domain where neither of the individual pristine constituents, neither AW nor CN, are transparent. The effect can be used to control electron charge transfer in semiconducting CN based devices for nanoscale energy conversion, separation and storage. Nsf-ECCS-1306871 (M.G.), DOE-DE-SC0007117 (I.B.).

  14. Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition

    NASA Astrophysics Data System (ADS)

    Balsano, Robert; Durcan, Chris; Matsubayashi, Akitomo; Narasimham, Avyaya J.; LaBella, Vincent P.

    2016-03-01

    The Schottky barrier height (SBH) is mapped with nanoscale resolution at pure Au/Si(001) and mixed Au/Ag/Si(001) interfaces utilizing ballistic electron emission microscopy by acquiring and fitting spectra every 11.7 nm × 11.7 nm over a 1 μm × 1 μm area. The SBH distributions for the mixed interfaces are about four times broader than the pure gold interface and have a complex structure arising from the incomplete intermixing and its effects on the scattering of hot electrons. The maps of the barrier heights and amplitudes for the mixed samples are inhomogeneous with localization attributed to the disordered mixture of the Au and Ag. A method to calculate ratio of the Au to Ag Schottky barrier heights is presented and discussed in relationship to the interface composition. These results demonstrate how the Schottky barrier height is a function of position at the interface, and how mapping can capture the electrostatic nature of these and possibly other mixed metal-semiconductor interfaces.

  15. Non-radiative relaxation and rectification behavior of metal/semiconductor tetrapod heterostructures

    SciTech Connect

    Kanta Haldar, Krishna; Kundu, Simanta; Patra, Amitava

    2014-02-10

    The metal-semiconductor hetero-structures have recently emerged as functional materials for their potential applications in the areas of photonic, optoelectronic, and other fields. Here, we discuss the structural characterization of Au/CdSe tetrapod hetero-structures by using high-resolution transmission electron microscope, high angle annular dark field-scanning transmission electron microscopic, and X-ray diffraction. The blue shifting of the plasmonic band and red shifting of the excitonic band suggest a strong surface plasmon-exciton interaction between Au and CdSe in Au/CdSe tetrapod heterostructure. A significant photoluminescence quenching (83.4%) of CdSe nanorod (NR) is observed in the presence of Au nanoparticle in Au/CdSe tetrapod heterostructure. The radiative and nonradiative decay rates of CdSe nanorods are found to be modified in Au/CdSe tetrapod structures and the nonradiative rate changes from 1.91 × 10{sup 7} s{sup −1} to 9.33 × 10{sup 9} s{sup −1} for CdSe NR to Au/CdSe tetrapod structure, respectively. Current-voltage characteristics of Au/CdSe heterostructure exhibit the rectification property with a threshold voltage of about 0.85 V and the rectifying ratio is 140 which can open up avenues for developing challenging devices.

  16. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    DOE PAGESBeta

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizingmore » the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.« less

  17. Rare Earth Metal/semiconductor Interfaces and Compounds

    NASA Astrophysics Data System (ADS)

    Nogami, Jun

    Interfaces formed at room temperature by incremental deposition of rare earth metals onto semiconductor substrates have been studied with surface sensitive soft X-ray photoelectron spectroscopy. The trends in core level lineshape and intensity with increasing metal coverage have been used to deduce an outline of the evolution and the final morphology of the interfacial region on a microscopic scale. Measurements were taken for Ytterbium (Yb) on Silicon (Si), Germanium, and Gallium Arsenide, and for Gadolinium (Gd) and Europium (Eu) on Silicon. The Yb/Si interface work was supported by comparable measurements of bulk Yb silicide samples of known composition and crystal structure. In a general sense, the behavior of all the systems studied is similar. At very low metal coverages, the metal atoms chemisorb and are weakly bonded to the substrate. The 4f core levels indicate that the metal-metal atom coordination is relatively low at this stage. The interaction with the substrate strengthens with increasing coverage, culminating in the formation of a strongly reacted phase at between 1 and 3 monolayers (ML). The strong reaction is limited to a narrow region at room temperature. At less than 10 ML coverage, the surface of the sample is almost indistinguishable from the pure metal. Details of the behavior such as the reactivity at low coverage, the compounds formed at the interface, the morphology at the surface at intermediate coverages, the final interfacial width, and the amount of substrate atom outdiffusion and surface segregation can all vary from system to system. It is in explaining the causes of some of these differences that insight about what governs the behavior of all of these rare earth metal/semiconductor systems has been obtained. The divalent metals (Yb, Eu) are significantly less reactive than trivalent Gd at sub-monolayer coverages. For the divalent metals the formation of a metal-rich phase is strongly favored in the reaction at the interface, whereas

  18. Fabrication of Smooth Patterned Structures of Refractory Metals, Semiconductors, and Oxides via Template Stripping

    PubMed Central

    2013-01-01

    The template-stripping method can yield smooth patterned films without surface contamination. However, the process is typically limited to coinage metals such as silver and gold because other materials cannot be readily stripped from silicon templates due to strong adhesion. Herein, we report a more general template-stripping method that is applicable to a larger variety of materials, including refractory metals, semiconductors, and oxides. To address the adhesion issue, we introduce a thin gold layer between the template and the deposited materials. After peeling off the combined film from the template, the gold layer can be selectively removed via wet etching to reveal a smooth patterned structure of the desired material. Further, we demonstrate template-stripped multilayer structures that have potential applications for photovoltaics and solar absorbers. An entire patterned device, which can include a transparent conductor, semiconductor absorber, and back contact, can be fabricated. Since our approach can also produce many copies of the patterned structure with high fidelity by reusing the template, a low-cost and high-throughput process in micro- and nanofabrication is provided that is useful for electronics, plasmonics, and nanophotonics. PMID:24001174

  19. Surface enhanced Raman spectroscopic studies of the metal-semiconductor interface in organic field effect transistors

    NASA Astrophysics Data System (ADS)

    Adil, Danish; Guha, Suchi

    2012-02-01

    The performance of organic field-effect transistors (FETs) largely depends on the nature of interfaces of dissimilar materials. Metal-semiconductor interfaces, in particular, play a critical role in the charge injection process. Here, Raman spectroscopy is used to investigate the nature of the Au-semiconductor interface in pentacene based FETs. A large enhancement in the Raman intensity (SERS) is observed from the pentacene film under the Au layer. The enhancement is evidence of a nano-scale roughness in the morphology of the interface, which is further confirmed by electron microscopy images. The morphology of the interface is investigated by SERS as a function of the pentacene layer thickness and the Au layer thickness. The Raman spectra are found to be extremely sensitive in detecting small changes in the morphology of the interface in the sub-nanometer range. Changes in the Raman spectra are further tracked after biasing and ageing the devices. Evolution of these Raman spectra is correlated with degradation in device performance. Finally, FETs based on other donor-acceptor semiconductors are probed by Raman scattering and contrasted with those of the pentacene-based devices.

  20. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

    NASA Astrophysics Data System (ADS)

    Patil, Ranjit A.; Wei, Mao-Kuo; Yeh, P.-H.; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-01

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs).We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes

  1. Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

    2004-03-01

    The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

  2. Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

    NASA Astrophysics Data System (ADS)

    Currie, Marc; Quaranta, Fabio; Cola, Adriano; Gallo, Eric M.; Nabet, Bahram

    2011-11-01

    Low-temperature-grown GaAs (LT-GaAs) has a picosecond recombination lifetime, making a fast photodetector material but limiting carrier mobility and collection efficiency. Here, a metal-semiconductor-metal photodetector with a thin channel of regular-temperature GaAs (RT-GaAs) above LT-GaAs provides fast transit between contacts. A p-type delta doping layer below these layers produces a vertical electric field forcing optically generated electrons towards the channel. The AlGaAs/RT-GaAs heterojunction increases Schottky contacts, and the resulting 8-22 μm pitch photodetectors have low (<1-nA) dark current, 12-ps (oscilloscope-limited) pulsewidth, and 0.15-A/W responsivity. The devices demonstrate that fast LT-GaAs pulses are achievable with responsivity similar to RT-GaAs.

  3. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    DOE PAGESBeta

    Liu, Yuanyue; Stradins, Paul; Wei, Su -Huai

    2016-04-22

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanishmore » with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.« less

  4. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

    PubMed Central

    Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai

    2016-01-01

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications. PMID:27152360

  5. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  6. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  7. Is DNA a metal, semiconductor or insulator? A theoretical approach

    NASA Astrophysics Data System (ADS)

    Rey-Gonzalez, Rafael; Fonseca-Romero, Karen; Plazas, Carlos; Grupo de Óptica e Información Cuántica Team

    Over the last years, scientific interest for designing and making low dimensional electronic devices with traditional or novel materials has been increased. These experimental and theoretical researches in electronic properties at molecular scale are looking for developing efficient devices able to carry out tasks which are currently done by silicon transistors and devices. Among the new materials DNA strands are highlighted, but the experimental results have been contradictories pointing to behaviors as conductor, semiconductor or insulator. To contribute to the understanding of the origin of the disparity of the measurements, we perform a numerical calculation of the electrical conductance of DNA segments, modeled as 1D disordered finite chains. The system is described into a Tight binding model with nearest neighbor interactions and a s orbital per site. Hydration effects are included as random variations of self-energies. The electronic current as a function of applied bias is calculated using Launder formalism, where the transmission probability is determined into the transfer matrix formalism. We find a conductor-to-semiconductor-to-insulator transition as a function of the three effects taken into account: chain size, intrinsic disorder, and hydration We thank Fundación para la Promoción de la Investigación y la Tecnología, Colombia, and Dirección de Investigación de Bogotá, Universidad Nacional de Colombia, for partial financial support.

  8. Reaction Current Phenomenon in Bifunctional Catalytic Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Hashemian, Mohammad Amin

    Energy transfer processes accompany every elementary step of catalytic chemical processes on material surface including molecular adsorption and dissociation on atoms, interactions between intermediates, and desorption of reaction products from the catalyst surface. Therefore, detailed understanding of these processes on the molecular level is of great fundamental and practical interest in energy-related applications of nanomaterials. Two main mechanisms of energy transfer from adsorbed particles to a surface are known: (i) adiabatic via excitation of quantized lattice vibrations (phonons) and (ii) non-adiabatic via electronic excitations (electron/hole pairs). Electronic excitations play a key role in nanocatalysis, and it was recently shown that they can be efficiently detected and studied using Schottky-type catalytic nanostructures in the form of measureable electrical currents (chemicurrents) in an external electrical circuit. These nanostructures typically contain an electrically continuous nanocathode layers made of a catalytic metal deposited on a semiconductor substrate. The goal of this research is to study the direct observations of hot electron currents (chemicurrents) in catalytic Schottky structures, using a continuous mesh-like Pt nanofilm grown onto a mesoporous TiO2 substrate. Such devices showed qualitatively different and more diverse signal properties, compared to the earlier devices using smooth substrates, which could only be explained on the basis of bifunctionality. In particular, it was necessary to suggest that different stages of the reaction are occurring on both phases of the catalytic structure. Analysis of the signal behavior also led to discovery of a formerly unknown (very slow) mode of the oxyhydrogen reaction on the Pt/TiO2(por) system occurring at room temperature. This slow mode was producing surprisingly large stationary chemicurrents in the range 10--50 microA/cm2. Results of the chemicurrent measurements for the bifunctional

  9. Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence.

    PubMed

    Patil, Ranjit A; Wei, Mao-Kuo; Yeh, P-H; Liang, Jyun-Bo; Gao, Wan-Ting; Lin, Jin-Han; Liou, Yung; Ma, Yuan-Ron

    2016-02-14

    We synthesized Bi/Bi2O3 heterojunction nanoparticles at various substrate temperatures using the pulsed laser deposition (PLD) technique with a pulsed Nd:YAG laser. The Bi/Bi2O3 heterojunction nanoparticles consisted of Bi nanoparticles and Bi2O3 surface layers. The average diameter of the Bi nanoparticles and the thickness of the Bi2O3 surface layer are linearly proportional to the substrate temperature. The heterojunctions between the Bi nanoparticles and Bi2O3 surface layers, which are the metal-semiconductor heterojunctions, can strongly enhance the photoluminescence (PL) of the Bi/Bi2O3 nanoparticles, because the metallic Bi nanoparticles can provide massive free Fermi-level electrons for the electron transitions in the Bi2O3 surface layers. The enhancement of PL emission at room temperature by metal-semiconductor-heterojunctions make the Bi/Bi2O3 heterojunction nanoparticles potential candidates for use in optoelectronic nanodevices, such as light-emitting diodes (LEDs) and laser diodes (LDs). PMID:26804935

  10. Development of epitaxial AlxSc1-xN for artificially structured metal/semiconductor superlattice metamaterials

    SciTech Connect

    Sands, Timothy D.; Stach, Eric A.; Saha, Bivas; Saber, Sammy; Naik, Gururaj V.; Boltasseva, Alexandra; Kvam, Eric P.

    2015-02-01

    Epitaxial nitride rocksalt metal/semiconductor superlattices are emerging as a novel class of artificially structured materials that have generated significant interest in recent years for their potential application in plasmonic and thermoelectric devices. Though most nitride metals are rocksalt, nitride semiconductors in general have hexagonal crystal structure. We report rocksalt aluminum scandium nitride (Al,Sc)N alloys as the semiconducting component in epitaxial rocksalt metal/semiconductor superlattices. The AlxSc1-xN alloys when deposited directly on MgO substrates are stabilized in a homogeneous rocksalt (single) phase when x < 0.51. Employing 20 nm TiN as a seed layer on MgO substrates, the homogeneity range for stabilizing the rocksalt phase has been extended to x < 0.82 for a 120 nm film. The rocksalt AlxSc1-xN alloys show moderate direct bandgap bowing with a bowing parameter, B = 1.41 ± 0.19 eV. The direct bandgap of metastable rocksalt AlN is extrapolated to be 4.70 ± 0.20 eV. The tunable lattice parameter, bandgap, dielectric permittivity, and electronic properties of rocksalt AlxSc1-xN alloys enable high quality epitaxial rocksalt metal/AlxSc1-xN superlattices with a wide range of accessible metamaterials properties.

  11. Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits.

    PubMed

    Frenzel, Heiko; Lajn, Alexander; von Wenckstern, Holger; Lorenz, Michael; Schein, Friedrich; Zhang, Zhipeng; Grundmann, Marius

    2010-12-14

    Metal-semiconductor field-effect transistors (MESFETs) are widely known from opaque high-speed GaAs or high-power SiC and GaN technology. For the emerging field of transparent electronics, only metal-insulator-semiconductor field-effect transistors (MISFETs) were considered so far. This article reviews the progress of high-performance MESFETs in oxide electronics and reflects the recent advances of this technique towards transparent MESFET circuitry. We discuss design prospects as well as limitations regarding device performance, reliability and stability. The presented ZnO-based MESFETs and inverters have superior properties compared to MISFETs, i.e., high channel mobilities and on/off-ratios, high gain, and low uncertainty level at comparatively low operating voltages. This makes them a promising approach for future low-cost transparent electronics. PMID:20878625

  12. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    PubMed

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process. PMID:27427689

  13. Simulation of Submicronmeter Metal-Semiconductor-Metal Ultraviolet Photodiodes no Gallium Nitride

    SciTech Connect

    Li, J.; Donaldson, W.R.; Hsiang, T.Y.

    2004-09-15

    Ultrafast metal Semiconductor metal ultraviolet photodetectors on GaN with 0.3-mm finger width and spacing were fabricated and packaged with a specially designed fast circuit. The assembly was simulated using a distributed circuit approach with optical illumination at l = 270 nm. This is the first theoretical simulation report of this effect in ultrafast ultraviolet photodetectors on GaN. Comparison of simulations and measurements was made in a wide range of optical energies, and a close agreement was achieved with a single energy-scaling factor.

  14. Deep-subwavelength hybrid plasmonic waveguide with metal-semiconductor ribs for nanolaser applications

    NASA Astrophysics Data System (ADS)

    Li, Zhiquan; Piao, Ruiqi; Zhao, Jingjing; Meng, Xiaoyun; Li, Wenchao; Niu, Liyong; Gu, Erdan

    2015-12-01

    We propose a novel hybrid plasmonic waveguide with metal-semiconductor ribs. We investigated the modal properties of the proposed structure and the threshold property for plasmonic nanolaser applications by using the finite element method. The results reveal that the structure enables deep-subwavelength mode confinement with low propagation loss and low threshold. By optimizing the geometric parameters of the structure, the mode area can reach 0.000 29λ 2 with a threshold of 700.9/cm at the wavelength of 1.55 μm. Compared to the previously studied hybrid plasmonic waveguide, tighter mode confinement and lower propagation loss is simultaneously achieved for the structure with the same geometric parameters. The designed structure can be used as a low-threshold nanolaser and has promising potential for applications in active plasmonic systems and optoelectronic integrated circuits.

  15. Lossless propagation in metal-semiconductor-metal plasmonic waveguides using quantum dot active medium.

    PubMed

    Sheikhi, K; Granpayeh, N; Ahmadi, V; Pahlavan, S

    2015-04-01

    In this paper, we analyze and simulate the lossless propagation of lightwaves in the active metal-semiconductor-metal plasmonic waveguides (MSMPWs) at the wavelength range of 1540-1560 nm using a quantum dot (QD) active medium. The Maxwell's equations are solved in the waveguide, and the required gains for achieving lossless propagation are derived. On the other hand, the rate equations in quantum dot active regions are solved by using the Runge-Kutta method, and the achievable optical gain is derived. The analyses results show that the required optical gain for lossless propagation in MSMPWs is achievable using the QD active medium. Also, by adjusting the active medium parameters, the MSMPWs loss can be eliminated in a specific bandwidth, and the propagation length increases obviously. PMID:25967191

  16. Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Noh, Youngwook; Polat, Kinyas; Kemal Okyay, Ali; Lee, Dongjin

    2015-12-01

    Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.

  17. Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors

    NASA Astrophysics Data System (ADS)

    Zhou, Dong; Lu, Hai; Chen, Dun-Jun; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Dou; Li, Liang

    2013-11-01

    Al0.5Ga0.5 N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate, which are tested for vacuum ultraviolet light detection by using a synchrotron radiation source. The PD exhibits low dark current of less than 1 pA under 30 V bias and a spectral cutoff around 260 nm, corresponding to the energy bandgap of Al0.5Ga0.5N. A peak photo-responsivity of 14.68 mA/W at 250 nm with a rejection ratio (250/360 nm) of more than four orders of magnitude is obtained under 30 V bias. For wavelength less than 170 nm, the photoresponsivity of the PD is found to increase as wavelength decreases, which is likely caused by the enhanced photoemission effect.

  18. Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron Voon-Yew; De Meyer, Kristin

    2016-04-01

    Applying simulations and experiments, this paper systematically compares contact resistivities (ρc) of metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) contacts with various semiconductor doping concentrations (Nd). Compared with the MS contacts, the MIS contacts with the low Schottky barrier height are more beneficial for ρc on semiconductors with low Nd, but this benefit diminishes gradually when Nd increases. With high Nd, we find that even an "ideal" MIS contact with optimized parameters cannot outperform the MS contact. As a result, the MIS contacts mainly apply to devices that use relatively low doped semiconductors, while we need to focus on the MS contacts to meet the sub-1 × 10-8 Ω cm2 ρc requirement for future Complementary Metal-Oxide-Semiconductor (CMOS) technology.

  19. High detectivity GaN metal semiconductor metal UV photodetectors with transparent tungsten electrodes

    NASA Astrophysics Data System (ADS)

    Wang, C. K.; Chang, S. J.; Su, Y. K.; Chiou, Y. Z.; Chang, C. S.; Lin, T. K.; Liu, H. L.; Tang, J. J.

    2005-06-01

    GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W-1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

  20. Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly.

    PubMed

    Nahar, Lamia; Esteves, Richard J Alan; Hafiz, Shopan; Özgür, Ümit; Arachchige, Indika U

    2015-10-27

    Hybrid nanomaterials composed of metal-semiconductor components exhibit unique properties in comparison to their individual counterparts, making them of great interest for optoelectronic applications. Theoretical and experimental studies suggest that interfacial interactions of individual components are of paramount importance to produce hybrid electronic states. The direct cross-linking of nanoparticles (NPs) via controlled removal of the surfactant ligands provides a route to tune interfacial interactions in a manner that has not been thoroughly investigated. Herein, we report the synthesis of CdSe/Ag heteronanostructures (aerogels) via oxidation induced self-assembly of thiol-coated NPs and the evolution of optical properties as a function of composition. Three hybrid systems were investigated, where the first and second excitonic energies of CdSe were matched with plasmonic energy of Au or Ag NPs and Ag hollow NPs. Physical characterization of the aerogels suggests the presence of an interconnected network of hexagonal CdSe and cubic Ag NPs. The optical properties of hybrids were systematically examined through UV-vis, photoluminescence (PL), and time-resolved (TR) PL spectroscopic studies that indicate the generation of alternate radiative decay pathways. A new emission (640 nm) from CdSe/Ag aerogels emerged at Ag loading as low as 0.27%, whereas absorption band tailing and PL quenching effects were observed at higher Ag and Au loading, respectively. The TRPL decay time of the new emission (∼600 ns) is markedly different from those of the band-edge (1.83 ± 0.03 ns) and trap-state (1190 ± 120 ns) emission maxima of phase pure CdSe, supporting the existence of alternate radiative relaxation pathways in sol-gel derived CdSe/Ag hybrids. PMID:26389642

  1. Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Kwon, Sangku; Lee, Seon Joo; Kim, Sun Mi; Lee, Youngkeun; Song, Hyunjoon; Park, Jeong Young

    2015-07-01

    The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 +/- 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface.The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 +/- 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02285a

  2. Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

    PubMed

    Yan, Fengpo; Wang, Yonghao; Zhang, Jiye; Lin, Zhang; Zheng, Jinsheng; Huang, Feng

    2014-01-01

    The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency. PMID:24458735

  3. Modeling electrochemical deposition inside nanotubes to obtain metal-semiconductor multiscale nanocables or conical nanopores.

    PubMed

    Lebedev, Konstantin; Mafé, Salvador; Stroeve, Pieter

    2005-08-01

    Nanocables with a radial metal-semiconductor heterostructure have recently been prepared by electrochemical deposition inside metal nanotubes. First, a bare nanoporous polycarbonate track-etched membrane is coated uniformly with a metal film by electroless deposition. The film forms a working electrode for further deposition of a semiconductor layer that grows radially inside the nanopore when the deposition rate is slow. We propose a new physical model for the nanocable synthesis and study the effects of the deposited species concentration, potential-dependent reaction rate, and nanopore dimensions on the electrochemical deposition. The problem involves both axial diffusion through the nanopore and radial transport to the nanopore surface, with a surface reaction rate that depends on the axial position and the time. This is so because the radial potential drop across the deposited semiconductor layer changes with the layer thickness through the nanopore. Since axially uniform nanocables are needed for most applications, we consider the relative role of reaction and axial diffusion rates on the deposition process. However, in those cases where partial, empty-core deposition should be desirable (e.g., for producing conical nanopores to be used in single nanoparticle detection), we give conditions where asymmetric geometries can be experimentally realized. PMID:16852830

  4. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    PubMed Central

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  5. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

    NASA Astrophysics Data System (ADS)

    Klein, P. B.; Binari, S. C.; Freitas, J. A.; Wickenden, A. E.

    2000-09-01

    Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model. The two traps were found to have very different photoionization cross-sections but comparable concentrations (4×1011 cm-2 and 6×1011 cm-2), suggesting that both traps contribute comparably to the observed current collapse.

  6. Study of gain phenomenon in lateral metal-semiconductor-metal detectors for indirect conversion medical imaging

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, Shiva; Allec, Nicholas; Wang, Kai; Chen, Feng; Karim, Karim S.

    2011-03-01

    Previously, metal-semiconductor-metal (MSM) lateral amorphous selenium (a-Se) detectors have been proposed for indirect detector medical imaging applications. These detectors have raised interest due to their high-speed and photogain. The gain measured from these devices was assumed to have been photoconductive gain; however the origin of this gain was not fully understood. In addition, whether or not there was any presence of photocurrent multiplication gain was not investigated. For integration-type applications photocurrent multiplication gain is desirable since the total collected charge can be greater than the total number of absorbed photons. In order to fully appreciate the value of MSM devices and their benefit for different applications, whether it is counting or integration applications, we need to investigate the responsible mechanisms of the observed response. In this paper, we systematically study, through experimental and theoretical means, the nature of the photoresponse and its responsible mechanisms. This study also exposes the possible means to increase the performance of the device and under what conditions it will be most beneficial.

  7. Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

    NASA Astrophysics Data System (ADS)

    Ocak, Yusuf Selim; Gul Guven, Reyhan; Tombak, Ahmet; Kilicoglu, Tahsin; Guven, Kemal; Dogru, Mehmet

    2013-06-01

    A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78 eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58 eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100 mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65 eV band gap value obtained from optical method.

  8. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-09-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W-1 to 2480 and 2.43 × 1010 cmHz0.5W-1, respectively.

  9. Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors.

    PubMed

    Lee, Ching-Ting; Lin, Heng-Yu; Tseng, Chun-Yen

    2015-01-01

    In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode, and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 10(10) cmHz(0.5)W(-1) to 2480 and 2.43 × 10(10) cmHz(0.5)W(-1), respectively. PMID:26324247

  10. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

    PubMed

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-01-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

  11. Rectification and Photoconduction Mapping of Axial Metal-Semiconductor Interfaces Embedded in GaAs Nanowires

    NASA Astrophysics Data System (ADS)

    Orrù, Marta; Piazza, Vincenzo; Rubini, Silvia; Roddaro, Stefano

    2015-10-01

    Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges in the development of nanowire-based devices is the fabrication of reliable nanoscale contacts. Recent developments in the creation of metal-semiconductor junctions by thermal annealing of metallic electrodes offer promising perspectives. Here, we analyze the optoelectronic properties of nano-Schottky barriers obtained thanks to the controlled formation of metallic AuGa regions in GaAs nanowire. The junctions display a rectifying behavior and their transport characteristics are analyzed to extract the average ideality factor and barrier height in the current architecture. The presence, location, and properties of the Schottky junctions are cross-correlated with spatially resolved photocurrent measurements. Broadband light emission is reported in the reverse breakdown regime; this observation, combined with the absence of electroluminescence at forward bias, is consistent with the device unipolar nature.

  12. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

    NASA Astrophysics Data System (ADS)

    Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

    2016-05-01

    The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

  13. Fermi level dependent native defect formation: Consequences for metal--semiconductor and semiconductor--semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-07-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration.

  14. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    SciTech Connect

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.

  15. Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

    NASA Technical Reports Server (NTRS)

    Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

    1996-01-01

    Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

  16. Cross-plane thermal conductivity of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Koh, Yee Rui; Comparan, Jonathan; Sadasivam, Sridhar; Schroeder, Jeremy L.; Garbrecht, Magnus; Mohammed, Amr; Birch, Jens; Fisher, Timothy; Shakouri, Ali; Sands, Timothy D.

    2016-01-01

    Reduction of cross-plane thermal conductivity and understanding of the mechanisms of heat transport in nanostructured metal/semiconductor superlattices are crucial for their potential applications in thermoelectric and thermionic energy conversion devices, thermal management systems, and thermal barrier coatings. We have developed epitaxial (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices with periodicity ranging from 1 nm to 240 nm that show significantly lower thermal conductivity compared to the parent TiN/(Al,Sc)N superlattice system. The (Ti,W)N/(Al,Sc)N superlattices grow with [001] orientation on the MgO(001) substrates with well-defined coherent layers and are nominally single crystalline with low densities of extended defects. Cross-plane thermal conductivity (measured by time-domain thermoreflectance) decreases with an increase in the superlattice interface density in a manner that is consistent with incoherent phonon boundary scattering. Thermal conductivity values saturate at 1.7 W m-1K-1 for short superlattice periods possibly due to a delicate balance between long-wavelength coherent phonon modes and incoherent phonon scattering from heavy tungsten atomic sites and superlattice interfaces. First-principles density functional perturbation theory based calculations are performed to model the vibrational spectrum of the individual component materials, and transport models are used to explain the interface thermal conductance across the (Ti,W)N/(Al,Sc)N interfaces as a function of periodicity. The long-wavelength coherent phonon modes are expected to play a dominant role in the thermal transport properties of the short-period superlattices. Our analysis of the thermal transport properties of (Ti,W)N/(Al,Sc)N metal/semiconductor superlattices addresses fundamental questions about heat transport in multilayer materials.

  17. Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

    NASA Astrophysics Data System (ADS)

    Tekcan, Burak; Ozgit-Akgun, Cagla; Bolat, Sami; Biyikli, Necmi; Okyay, Ali Kemal

    2014-10-01

    Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices.

  18. Dynamics of the formation of laser-induced periodic surface structures (LIPSS) upon femtosecond two-color double-pulse irradiation of metals, semiconductors, and dielectrics

    NASA Astrophysics Data System (ADS)

    Höhm, S.; Herzlieb, M.; Rosenfeld, A.; Krüger, J.; Bonse, J.

    2016-06-01

    In order to address the dynamics and physical mechanisms of LIPSS formation for three different classes of materials (metals, semiconductors, and dielectrics), two-color double-fs-pulse experiments were performed on Titanium, Silicon and Fused Silica. For that purpose a Mach-Zehnder interferometer generated polarization controlled (parallel or cross-polarized) double-pulse sequences at 400 nm and 800 nm wavelength, with inter-pulse delays up to a few picoseconds. Multiple of these two-color double-pulse sequences were collinearly focused by a spherical mirror to the sample surfaces. The fluence of each individual pulse (400 nm and 800 nm) was always kept below its respective ablation threshold and only the joint action of both pulses lead to the formation of LIPSS. Their resulting characteristics (periods, areas) were analyzed by scanning electron microscopy. The periods along with the LIPSS orientation allow a clear identification of the pulse which dominates the energy coupling to the material. For strong absorbing materials (Silicon, Titanium), a wavelength-dependent plasmonic mechanism can explain the delay-dependence of the LIPSS. In contrast, for dielectrics (Fused Silica) the first pulse always dominates the energy deposition and LIPSS orientation, supporting a non-plasmonic formation scenario. For all materials, these two-color experiments confirm the importance of the ultrafast energy deposition stage for LIPSS formation.

  19. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  20. Laser annealing of laser assisted molecular beam deposited ZnO thin films with application to metal-semiconductor-metal photodetectors

    SciTech Connect

    Li Meiya; Anderson, Wayne; Chokshi, Nehal; De Leon, Robert L.; Tompa, Gary

    2006-09-01

    We report on the effect of postdeposition laser annealing of undoped zinc oxide (ZnO) thin films grown by laser assisted molecular beam deposition. Hall-effect measurements show that some undoped ZnO films change from n type with mobility values in the range of 200 cm{sup 2} V{sup -1} s{sup -1} to p-type material with mobility value of 73 cm{sup 2} V{sup -1} s{sup -1}, after laser annealing. The photoconductive behavior was clearly seen on the laser-annealed samples, with values of 0.28 m{omega}{sup -1}. The structural and optical properties of the films were improved with laser annealing as shown by scanning electron microscopy, x-ray photoelectron spectroscopy analysis, and photoluminescence measurement. All of the nonlaser and laser annealed samples showed near-band emission at {approx}3.3 eV. Metal-semiconductor-metal photodetectors were fabricated from the films.

  1. Formation of Metal-Semiconductor Interfaces on Mbe-Grown Gallium ARSENIDE(100): Surface Photovoltage, Chemistry and Band Bending

    NASA Astrophysics Data System (ADS)

    Mao, Duli

    1992-01-01

    found for all three interfaces, supporting the metal induced gap states (MIGS) model for Schottky barrier formation. The synchrotron radiation-induced surface photovoltage (SPV), which could invalidate the apparent band bending measured with PES, is studied as a function of metal coverage and temperature, using a Kelvin probe. A large (0.55eV) and quasi-permanent SPV is observed on lightly doped n -GaAs at LT. A non-negligible (0.2eV) SPV is also observed at room temperature. No SPV is detected on highly doped GaAs. The impact of this synchrotron radiation induced SPV on the photoemission study of metal-semiconductor interfaces is discussed.

  2. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage.

    PubMed

    Hwang, J D; Lin, G S

    2016-09-16

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage. PMID:27501372

  3. Ultra low-loss, isotropic optical negative-index metamaterial based on hybrid metal-semiconductor nanowires

    PubMed Central

    Paniagua-Domínguez, R.; Abujetas, D. R.; Sánchez-Gil, J. A.

    2013-01-01

    Recently, many fascinating properties predicted for metamaterials (negative refraction, superlensing, electromagnetic cloaking,…) were experimentally demonstrated. Unfortunately, the best achievements have no direct translation to the optical domain, without being burdened by technological and conceptual difficulties. Of particular importance within the realm of optical negative-index metamaterials (NIM), is the issue of simultaneously achieving strong electric and magnetic responses and low associated losses. Here, hybrid metal-semiconductor nanowires are proposed as building blocks of optical NIMs. The metamaterial thus obtained, highly isotropic in the plane normal to the nanowires, presents a negative index of refraction in the near-infrared, with values of the real part well below −1, and extremely low losses (an order of magnitude better than present optical NIMs). Tunability of the system allows to select the operating range in the whole telecom spectrum. The design is proven in configurations such as prisms and slabs, directly observing negative refraction. PMID:23514968

  4. A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control

    NASA Astrophysics Data System (ADS)

    Gačević, Ž.; López-Romero, D.; Juan Mangas, T.; Calleja, E.

    2016-01-01

    A uniformly n-type doped GaN:Si nanowire (NW), with a diameter of d = 90 nm and a length of 1.2 μm, is processed into a metal-semiconductor field effect transistor (MESFET) with a semi-cylindrical top Ti/Au Schottky gate. The FET is in a normally-ON mode, with the threshold at -0.7 V and transconductance of gm ˜ 2 μS (the transconductance normalized with NW diameter gm/d > 22 mS/mm). It enters the saturation mode at VDS ˜ 4.5 V, with the maximum measured drain current IDS = 5.0 μA and the current density exceeding JDS > 78 kA/cm2.

  5. Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress

    NASA Astrophysics Data System (ADS)

    Dang, Giang T.; Kawaharamura, Toshiyuki; Furuta, Mamoru; Saxena, Saurabh; Allen, Martin W.

    2015-10-01

    The stability of metal-semiconductor field-effect-transistors (MESFETs) with silver oxide Schottky gates on In-Ga-Zn-O (IGZO) channels, grown by mist chemical-vapor-deposition, was examined under different combinations of positive and negative bias, illumination, and temperature stress. These devices were remarkably stable, even under the most severe condition of negative-bias-illumination-temperature-stress (NBITS), where the threshold voltage shift after 10 h NBITS was only +0.12 V and was mainly attributed to a decrease in the carrier density of the channel. The stability of these IGZO MESFETs is associated with the use of a conducting Schottky gate that significantly reduces charge trapping at the gate-channel interface.

  6. GaN metal-semiconductor-metal UV sensor with multi-layer graphene as Schottky electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Chang-Ju; Kang, Sang-Bum; Cha, Hyeon-Gu; Won, Chul-Ho; Hong, Seul-Ki; Cho, Byung-Jin; Park, Hongsik; Lee, Jung-Hee; Hahm, Sung-Ho

    2015-06-01

    We fabricated a GaN-based metal-semiconductor-metal (MSM)-type UV sensor using a multilayer graphene as transparent Schottky electrodes. The fabricated GaN MSM UV sensor showed a high photo-to-dark current contrast ratio of 3.9 × 105 and a UV-to-visible rejection ratio of 1.8 × 103 at 7 V. The as-fabricated GaN MSM UV sensor with graphene electrodes has a low bias dependence of maximum photoresponsivity and a noise-like response at a visible wavelength in the 500 nm region. These problems were successfully solved by treatment with a buffered oxide etcher (BOE), and the photoresponse characteristics of the fabricated GaN MSM UV sensor after the treatment were better than those before the treatment.

  7. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer

    NASA Astrophysics Data System (ADS)

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.

  8. A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.

    PubMed

    Xu, Qiang; Cheng, Qijin; Zhong, Jinxiang; Cai, Weiwei; Zhang, Zifeng; Wu, Zhengyun; Zhang, Fengyan

    2014-02-01

    High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene. PMID:24407201

  9. De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements

    NASA Astrophysics Data System (ADS)

    Gu, Dazhen; Wallis, T. M.; Blanchard, P.; Lim, Sang-Hyun; Imtiaz, A.; Bertness, K. A.; Sanford, N. A.; Kabos, P.

    2011-05-01

    We present a de-embedding roadmap for extracting parasitic elements of a nanowire (NW) metal semiconductor field effect transistor (MESFET) from full two-port scattering-parameter measurements in 0.1-25 GHz range. The NW MESFET is integrated in a microwave coplanar waveguide structure. A conventional MESFET circuit model is modified to include capacitors of small value that is non-negligible in NW devices. We follow a step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data. This letter reflects a significant step toward full circuit modeling of NW MESFETs under normal operating conditions.

  10. Analysis of aluminum nano-gratings assisted light reflection reduction in GaAs metal-semiconductor-metal photodetectors

    NASA Astrophysics Data System (ADS)

    Fan, Zhenzhu; Su, Yahui; Zhang, Huayong; Han, Xiaohu; Ren, Feifei

    2015-09-01

    Plasmonics-based GaAs metal-semiconductor-metal photodetector (MSM-PD) with aluminum nano-gratings was proposed. A detailed numerical study of subwavelength nanogratings behavior to reduce the light reflection is performed by finite-difference time domain (FDTD) algorithm. The geometric parameters of nano-gratings, such as aperture width, the nano-gratings height, the duty cycles are optimized for subwavelength metal nanogratings on GaAs substrate and their impact on light reflection below the conventional MSM-PD is confirmed. Simulation results show that a light reflection factor around 15% can be obtained near the wavelength of 900 nm with optimized MSM-PDs, and in visible light spectrum, the Al nano-gratings show better performance than Au nano-gratings.

  11. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

    NASA Astrophysics Data System (ADS)

    Ravikiran, L.; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Kian Siong, Ang

    2016-09-01

    GaN Schottky metal-semiconductor-metal (MSM) UV photodetectors were fabricated on a 600 nm thick GaN layer, grown on 100 mm Si (111) substrate using an ammonia-MBE growth technique. In this report, the effect of device dimensions, applied bias and input power on the linearity of the GaN Schottky-based MSM photodetectors on Si substrate were investigated. Devices with larger interdigitated spacing, ‘S’ of 9.0 μm between the fingers resulted in good linearity and flat responsivity characteristics as a function of input power with an external quantum efficiency (EQE) of ∼33% at an applied bias of 15 V and an input power of 0.8 W m‑2. With the decrease of ‘S’ to 3.0 μm, the EQE was found to increase to ∼97%. However, devices showed non linearity and drop in responsivity from flatness at higher input power. Moreover, the position of dropping from flatter responsivity was found to shift to lower powers with increased bias. The drop in the responsivity was attributed to the modulation of conductance in the MSM due to the trapping of electrons at the dislocations, resulting in the formation of depletion regions around them. In devices with lower ‘S’, both the image force reduction and the enhanced collection efficiency increased the photocurrent as well as the charging of the dislocations. This resulted in the increased depletion regions around the dislocations leading to the modulation of conductance and non-linearity.

  12. Theoretical maximum efficiency of solar energy conversion in plasmonic metal-semiconductor heterojunctions.

    PubMed

    Cushing, Scott K; Bristow, Alan D; Wu, Nianqiang

    2015-11-28

    Plasmonics can enhance solar energy conversion in semiconductors by light trapping, hot electron transfer, and plasmon-induced resonance energy transfer (PIRET). The multifaceted response of the plasmon and multiple interaction pathways with the semiconductor makes optimization challenging, hindering design of efficient plasmonic architectures. Therefore, in this paper we use a density matrix model to capture the interplay between scattering, hot electrons, and dipole-dipole coupling through the plasmon's dephasing, including both the coherent and incoherent dynamics necessary for interactions on the plasmon's timescale. The model is extended to Shockley-Queisser limit calculations for both photovoltaics and solar-to-chemical conversion, revealing the optimal application of each enhancement mechanism based on plasmon energy, semiconductor energy, and plasmon dephasing. The results guide application of plasmonic solar-energy harvesting, showing which enhancement mechanism is most appropriate for a given semiconductor's weakness, and what nanostructures can achieve the maximum enhancement. PMID:26497739

  13. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.

    PubMed

    Jin, Weifeng; Zhang, Kun; Gao, Zhiwei; Li, Yanping; Yao, Li; Wang, Yilun; Dai, Lun

    2015-06-24

    Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal-semiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 × 10(7). The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about -0.3 V, 4 × 10(5), 78 mV/dec, and 2.7 μS, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V(DD)) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices. PMID:26061530

  14. Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films

    NASA Astrophysics Data System (ADS)

    Xie, Yannan; Huang, Huolin; Yang, Weifeng; Wu, Zhengyun

    2011-01-01

    The titanium dioxide (TiO2) films prepared by sol-gel processing were used to fabricate metal-semiconductor-metal ultraviolet photodetectors. A very low dark current of 5.38 pA (current density of 3.84 nA/cm2) at 5 V bias is obtained, which is ascribed to the high effective Schottky barrier between Au and TiO2 films. The x-ray photoelectron spectroscopy analysis demonstrates that the concentration of oxygen vacancies is very low in the surface of the TiO2 films, which is responsible for the high effective Schottky barrier. The devices exhibit a cutoff wavelength at about 380 nm and a large UV-to-visible rejection ratio (340 versus 400 nm) of three orders of magnitude. The peak responsivity of the devices is 17.5 A/W at 5 V bias, indicating the presence of internal photoconductive gain induced by desorption of oxygen on the TiO2 surface.

  15. Surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings for single-lobe emission

    NASA Astrophysics Data System (ADS)

    Boyle, C.; Sigler, C.; Kirch, J. D.; Lindberg, D.; Earles, T.; Botez, D.; Mawst, L. J.

    2016-03-01

    Grating-coupled, surface-emitting (GCSE) quantum-cascade lasers (QCLs) are demonstrated with high-power, single-lobe surface emission. A 2nd-order Au-semiconductor distributed-feedback (DFB)/ distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric longitudinal mode by causing resonant coupling of the guided optical mode to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. In turn, the antisymmetric longitudinal modes are strongly absorbed by the metal in the grating, causing the symmetric longitudinal mode to be favored to lase, which produces a single lobe beam over a grating duty-cycle range of 36-41 %. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of residual reflections from the device's cleaved ends. Peak pulsed output powers of ~ 0.4 W were measured with single-lobe, single-mode operation near 4.75 μm.

  16. Metal-Semiconductor Transition Concomitant with a Structural Transformation in Tetrahedrite Cu12Sb4S13

    NASA Astrophysics Data System (ADS)

    Tanaka, Hiromi I.; Suekuni, Koichiro; Umeo, Kazunori; Nagasaki, Toshiki; Sato, Hitoshi; Kutluk, Galif; Nishibori, Eiji; Kasai, Hidetaka; Takabatake, Toshiro

    2016-01-01

    The tetrahedrite Cu12Sb4S13 undergoes a metal-semiconductor transition (MST) at TMST = 85 K, whose mechanism remains elusive. Our Cu 2p X-ray photoemission spectroscopy study revealed the monovalent state of Cu ions occupying the two sites in this compound. This fact excludes the possibilities of previously proposed antiferromagnetic order and Jahn-Teller instability inherent in a divalent Cu system. A synchrotron X-ray diffraction study has revealed that the body-centered cubic cell of Cu12Sb4S13 transforms into a body-centered 2a × 2a × 2c tetragonal supercell below TMST, where the cell volume per formula unit expands by 0.25%. We have further studied pressure effects on the MST as well as the effects of the substitution of As for Sb. The application of pressure above 1 GPa completely inhibits the MST and leads to a metallic state, suggesting that the low-temperature structure with a larger volume becomes unstable under pressure. The As substitution also reduces the volume and suppresses the MST but the full substitution induces another transition at 124 K.

  17. A Comprehensive Study on Mo/CdTe Metal-Semiconductor Interface Deposited by Radio Frequency Magnetron Sputtering.

    PubMed

    Dhar, N; Khan, N A; Chelvanathan, P; Akhtaruzzaman, M; Alam, M M; Alothman, Z A; Sopian, K; Amin, N

    2015-11-01

    Metal-semiconductor (MS) junction between Mo and CdTe, which is one of the fundamental issues for CdTe based solar cell, has been investigated for films deposited on different substrates. XRD pattern of Mo/CdTe films on the polyimide (PI) substrate shows a strong preferential orientation of MoTe2 in (100) at 2θ = 29.44 degrees, which becomes less apparent as deposition time of CdTe increases. However, on soda lime glass (SLG) no such XRD reflection pattern is observed. Moreover, from EDX measurement, Mo-Te compound also identifies MoTe2 at Mo/CdTe interface on PI substrate, which is not present on SLG. Bulk carrier concentration of Mo/CdTe films on PI substrate for lower deposition time of CdTe is found 1.42 x 10(18) cm(-3), which is almost equal to MoTe2. Thereafter, it decreases as CdTe growth time increases. The type of unintentionally formed MoTe2 on PI substrate is found to be n-type in nature. Lattice constants of a = 6.5 Å for CdTe and a = 3.52 Å for MoTe2 are found from nanostructure study by TEM. PMID:26726685

  18. Plasmonic-exciton coupling in synthesized metal/semiconductor hybrid nanocomposites

    SciTech Connect

    Gadalla, A.; Hamad, D. A.; Mohamed, M. B.

    2015-12-31

    A new method has been developed to grow plasmonic semiconductor nanocomposites of Au/CdSe and Ag/CdSe. Their chemical composition and crystal structure are determined by X-ray diffraction. The collective optical properties of the prepared semiconductor nanohybrid have been measured using spectrophotometer techniques and compared to those of the individual components. The electron transfer processes from CdSe to the gold are faster than that of the silver. Au/CdSe has a strong plasmonic-excitonic coupling, but Ag/CdSe has a weak plasmonic-excitonic coupling.

  19. Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

    PubMed Central

    Tan, Shih-Wei; Lai, Shih-Wen

    2012-01-01

    Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φb) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

  20. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  1. Metal, Semiconductor, and Carbon Cluster Studies Including the Discovery and Characterization of Carbon -60: Buckminsterfullerene.

    NASA Astrophysics Data System (ADS)

    Heath, James Richard

    Experiments using the laser vaporization technique for production of metal clusters have been performed. The reactions of neutral metal clusters with various gases have been studied using a fast flow reactor. Dramatic reactivity variations were observed which depended on cluster size, metal, and reactant. A laser vaporization disc source has been developed for the study of semiconductor clusters. Some preliminary studies on neutral germanium and silicon clusters were performed. Their ionization potentials have been bracketed and the clusters were found to fragment by a fissioning process and to have long lived (100 nanoseconds) excited electronic states. A detailed study has been undertaken into carbon clusters. Laser synthesis of astrophysically important polyyne molecules such as H-C-(C-C)_{ rm 2n}-N has been done. Chains containing up to 22 carbon atoms are formed in a vaporized carbon and reactant gas plasma. A photophysically stable and chemically inert cluster, C_{60}, has been discovered and hypothesized to have the structure of a truncated icosahedron. All even clusters in the 60 atom size range were found to be inert to highly reactive gases, while odd clusters readily reacted. The results are consistent with a whole series (30-90 atoms) of closed cage-like structures. Closure of even clusters only is possible via the inclusion of twelve pentagons into a hexagonal network. Odd clusters show neither the photophysical nor chemical stability of the even clusters. A mechanism for the formation of spherical soot particles has been developed. Stable organometallic complexes of the formula C_{rm 2n}M (20 < n < 40 and M = La, Ba, Sr, Ca) have been laser synthesized. The dominant complex observed was C_{60}M ^+. These species are photophysically stable, chemically inert, and no C_{rm 2n}M_2^ecies were detected. The ultraviolet and visible absorption spectrum of C_{60} has been measured. Because excited electronic states are not expected to live long in a molecule

  2. Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

    PubMed

    Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

    2016-02-10

    We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices. PMID:26812264

  3. Growth of metal-semiconductor core-multishell nanorods with optimized field confinement and nonlinear enhancement

    NASA Astrophysics Data System (ADS)

    Nan, Fan; Xie, Fang-Ming; Liang, Shan; Ma, Liang; Yang, Da-Jie; Liu, Xiao-Li; Wang, Jia-Hong; Cheng, Zi-Qiang; Yu, Xue-Feng; Zhou, Li; Wang, Qu-Quan; Zeng, Jie

    2016-06-01

    This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities.This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09151a

  4. Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Miller, Ruth; Suria, Ateeq; Broad, Nicholas; Senesky, Debbie G.

    2015-05-01

    Ultraviolet (UV) photodetectors are used for applications such as flame detection, space navigation, biomedical and environmental monitoring. Robust operation within large ranges of temperatures, radiation, salinity and/or corrosive chemicals require sensor materials with the ability to withstand and function reliably within these extreme harsh environments. For example, spacecraft can utilize a sun sensor (light-based sensor) to assist with determination of orientation and may be exposed to both ionizing radiation and extreme temperature swings during operation. Gallium nitride (GaN), a wide bandgap semiconductor material, has material properties enabling visible-blindness, tunable cutoff wavelength selection based on ternary alloy mole fraction, high current density, thermal/chemical stability and high radiation tolerance due to the strength of the chemical bond. Graphene, with outstanding electrical, optical and mechanical properties and a flat absorption spectrum from 300 to 2,500 nm, has potential use as a transparent conductor for GaN-based metal-semiconductor-metal (MSM) photodetectors. Here, graphene-enhanced MSM UV photodetectors are fabricated with transparent and conductive graphene interdigitated electrodes on thin film GaN-on-sapphire substrates serving as back-to-back Schottky contacts. We report on the irradiation response of graphene/GaN-based MSM UV photodetectors up to 750 krad total ionizing dose (TID) then tested under dark and UV light (365 nm) conditions. In addition, based on current-voltage measurements from 75 krad to 750 krad TID, calculated photodetector responsivity values change slightly by 25% and 11% at -5 V and -2 V, respectively. These initial findings suggest that graphene/GaN MSM UV photodetectors could potentially be engineered to reliably operate within radiation environments.

  5. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy

    NASA Astrophysics Data System (ADS)

    Chakrabarti, Sudipto; Pal, Amlan J.

    2015-05-01

    , reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse. Electronic supplementary information (ESI) available: Additional figures. See DOI: 10.1039/c5nr01161b

  6. Enhanced electrical transparency by ultra-thin LaAlO3 insertion at oxide metal/semiconductor heterointerfaces

    SciTech Connect

    Yajima, Takeaki; Minohara, Makoto; Bell, Christopher; Kumigashira, Hiroshi; Oshima, Masaharu; Hwang, Harold Y.; Hikita, Yasuyuki

    2015-02-05

    We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. In conclusion, this field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision.

  7. Probing the nanoscale Schottky barrier of metal/semiconductor interfaces of Pt/CdSe/Pt nanodumbbells by conductive-probe atomic force microscopy.

    PubMed

    Kwon, Sangku; Lee, Seon Joo; Kim, Sun Mi; Lee, Youngkeun; Song, Hyunjoon; Park, Jeong Young

    2015-08-01

    The electrical nature of the nanoscale contact between metal nanodots and semiconductor rods has drawn significant interest because of potential applications for metal-semiconductor hybrid nanostructures in energy conversion or heterogeneous catalysis. Here, we studied the nanoscale electrical character of the Pt/CdSe junction in Pt/CdSe/Pt nanodumbbells on connected Au islands by conductive-probe atomic force microscopy under ultra-high vacuum. Current-voltage plots measured in contact mode revealed Schottky barrier heights of individual nanojunctions of 0.41 ± 0.02 eV. The measured value of the Schottky barrier is significantly lower than that of planar thin-film diodes because of a reduction in the barrier width and enhanced tunneling probability at the interface. PMID:26136054

  8. Performance improvement of GaN-based metal-semiconductor-metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

    NASA Astrophysics Data System (ADS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin

    2014-01-01

    A simple thermal cycle annealing (TCA) process was used to improve the quality of GaN grown on a Si substrate. The X-ray diffraction (XRD) and etch pit density (EPD) results revealed that using more process cycles, the defect density cannot be further reduced. However, the performance of GaN-based metal-semiconductor-metal (MSM) photodiodes (PDs) prepared on Si substrates showed significant improvement. With a two-cycle TCA process, it is found that the dark current of the device was only 1.46 × 10-11 A, and the photo-to-dark-current contrast ratio was about 1.33 × 105 at 5 V. Also, the UV/visible rejection ratios can reach as high as 1077.

  9. Contact resistivity decrease at a metal/semiconductor interface by a solid-to-liquid phase transitional metallo-organic silver.

    PubMed

    Shin, Dong-Youn; Seo, Jun-Young; Kang, Min Gu; Song, Hee-eun

    2014-09-24

    We present a new approach to ensure the low contact resistivity of a silver paste at a metal/semiconductor interface over a broad range of peak firing temperatures by using a solid-to-liquid phase transitional metallo-organic silver, that is, silver neodecanoate. Silver nanoclusters, thermally derived from silver neodecanoate, are readily dissolved into the melt of metal oxide glass frit even at low temperatures, at which point the molten metal oxide glass frit lacks the dissociation capability of bulk silver into Ag(+) ions. In the presence of O(2-) ions in the melt of metal oxide glass frit, the redox reaction from Ag(+) to Ag(0) augments the noble-metal-assisted etching capability to remove the passivation layer of silicon nitride. Moreover, during the cooling stage, the nucleated silver atoms enrich the content of silver nanocolloids in the solidified metal oxide glass layer. The resulting contact resistivity of silver paste with silver neodecanoate at the metal/semiconductor interface thus remains low-between 4.12 and 16.08 mΩ cm(2)-whereas without silver neodecanoate, the paste exhibits a contact resistivity between 2.61 and 72.38 mΩ cm(2) in the range of peak firing temperatures from 750 to 810 °C. The advantage of using silver neodecanoate in silver paste becomes evident in that contact resistivity remains low over the broad range of peak firing temperatures, thus providing greater flexibility with respect to the firing temperature required in silicon solar cell applications. PMID:25182502

  10. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    PubMed

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-01

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures. PMID:26479951

  11. Stone-Wales defects can cause a metal-semiconductor transition in carbon nanotubes depending on their orientation.

    PubMed

    Partovi-Azar, P; Namiranian, A

    2012-01-25

    It has been shown that the two different orientations of Stone-Wales (SW) defects, i.e. longitudinal and circumferential SW defects, on carbon nanotubes (CNTs) result in two different electronic structures. Based on density functional theory we have shown that the longitudinal SW defects do not open a bandgap near the Fermi energy, while a relatively small bandgap emerges in tubes with circumferential defects. We argue that the bandgap opening in the presence of circumferential SW defects is a consequence of long-range symmetry breaking which can spread all the way along the tube. Specifically, the distribution of contracted and stretched bond lengths due to the presence of defects, and hopping energies for low-energy electrons, i.e. the 2p(z) electrons, show two different patterns for the two types of defects. Interplay between the geometric features and the electronic properties of the tubes have also been studied for different defect concentrations. Considering π-orbital charge density, it has also been shown that the deviations of bond lengths from their relaxed length result in different doping for two defect orientations around the defects-electron-rich for a circumferential defect and hole-rich for a longitudinal one. We have also shown that, in the tubes having both types of defects, circumferential defects would dominate and impose their electronic properties. PMID:22156012

  12. Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO2 Passivation.

    PubMed

    Lee, Soo Hyun; Kim, Sang Hun; Yu, Jae Su

    2016-12-01

    Metal-semiconductor-metal near-ultraviolet (NUV) photodetectors (PDs) based on zinc oxide (ZnO) nanorods (NRs), operating at λ ~ 380 nm, were fabricated using conventional photolithography and hydrothermal synthesis processes. The vertically aligned ZnO NRs were selectively grown in the channel area of PDs. The performance of ZnO NR-based NUV PDs was optimized by varying the solution concentration and active channel width (W ch). For the fabricated samples, their electrical and photoresponse properties were investigated under the dark state and the illumination at wavelength of ~380 nm, respectively. For the device (W ch = 30 μm) with ZnO NRs at 25 mM, the highest photocurrent of 0.63 mA was obtained with the on/off ratio of 1720 at the bias of 5 V. The silicon dioxide passivation was also carried out to improve the photoresponse properties of PDs. The passivated devices exhibited faster rise and reset times rather than those of the unpassivated devices. PMID:27422775

  13. High-performance AlGaN metal-semiconductor-metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Xu, Jin; Ye, Wei; Li, Yang; Qi, Zhiqiang; Dai, Jiangnan; Wu, Zhihao; Chen, Changqing; Yin, Jun; Li, Jing; Jiang, Hao; Fang, Yanyan

    2015-01-01

    AlGaN-based solar-blind ultraviolet photodetectors have attractive potential applications in the fields of missile plume detection, biochemical sensing, solar astronomy, etc. In this work, significant deep ultraviolet detection enhancement is demonstrated on AlGaN-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetectors by introducing the coupling of localized surface plasmon from Al nanoparticles with the high-Al-content AlGaN epilayer. The size-controlled Al nanoparticle arrays fabricated by nanosphere lithography can not only reduce the detectors' dark current but also bring about greatly enhanced responsivity. The peak responsivity of AlGaN-based MSM solar-blind ultraviolet photodetectors with Al nanoparticles can reach 2.34 A/W at 269 nm under 20 V bias, enhanced more than 25 times than that without Al nanoparticles. Our approach shows an efficient fabrication technique of high-performance and low-cost plasmonic enhanced AlGaN solar-blind MSM ultraviolet photodetectors.

  14. Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal-semiconductor-metal Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Hong, Min-Jyun; Lin, Yong-Chen; Chao, Liang-Chiun; Lin, Pao-Hung; Huang, Bohr-Ran

    2015-08-01

    Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400 °C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO + Cu2O and Cu2O + Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250 nm and length longer than 1 μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3 eV with a smooth surface morphology. CuO metal-semiconductor-metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300 nm and a maximum responsivity of 43 mA/W was found at λ = 700 nm. The MSM PD is RC limited with a decay time constant less than 1 μs.

  15. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    SciTech Connect

    Brendel, Moritz Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  16. Si Waveguide-Integrated Metal-Semiconductor-Metal and p-i-n-Type Ge Photodiodes Using Si-Capping Layer

    NASA Astrophysics Data System (ADS)

    Fujikata, Junichi; Miura, Makoto; Noguchi, Masataka; Okamoto, Daisuke; Horikawa, Tsuyoshi; Arakawa, Yasuhiko

    2013-04-01

    We studied Si waveguide-integrated metal-semiconductor-metal (MSM) and p-i-n-type Ge photodiodes (Ge-PDs), using a Si-capping layer. As for an MSM Ge-PD, the Schottky barrier height was increased up to 0.44 V by applying a 8-20 nm Si-capping layer, and a very low dark current density of approximately 0.4 nA/µm2 was achieved with a high responsivity of 0.8 A/W. In addition, a small electrode spacing of 1 µm realized high-speed photodetection of 20 Gbps. As for a p-i-n-type Ge-PD, by applying a 10-20 nm Si capping layer, the contact resistance between a metal electrode of Ti/TiN/Al and n+-Si capping layer was successfully reduced to 1×10-5 Ω.cm2. A 45 GHz bandwidth was obtained with a low dark current density of 0.8 nA/µm2. Moreover, a more than 20 GHz bandwidth was achieved with zero-bias voltage. In the case of zero-bias voltage operation, a 3 dB bandwidth was a little affected by input power, which would originate from the photocarrier screening effect on the built-in electric field.

  17. Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

    NASA Astrophysics Data System (ADS)

    Adjaye, J.; Mazzola, M. S.

    4H-SiC n-channel power metal semiconductor field-effect transistors (MESFETs) with nitrogen n+-implanted source/drain ohmic contact regions, with and without p-buffer layer fabricated on semi-insulating substrates exhibited hysteresis in the drain I-V characteristics of both types of devices at 300 K and 480 K due to traps. However, thermal spectroscopic measurements could detect the traps only in the devices without p-buffer. Device simulation and optical admittance spectroscopy (OAS) are used to resolve the discrepancy in the initial experimental characterization results. Device simulations and OAS suggest that, in addition to the semi-insulating (SI) substrate traps, acceptor traps due to source/drain residual implant lattice damage contribute to the hysteresis observed in the drain I-V characteristics of the devices. Simulations suggest these traps are contained in the lateral straggle of the implanted source and drain regions since the drain current largely flows between the un-gated edges of the source and drain through the volume of lateral straggle traps. Since hysteresis in I-V curves is a manifestation of the presence of defects in devices and since defects degrade carrier mobility and hence device performance, efforts should be made to minimize the source/drain lateral straggle implant damage.

  18. Collective excitation of plasmonic hot-spots for enhanced hot charge carrier transfer in metal/semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Piot, Adrien; Earl, Stuart K.; Ng, Charlene; Dligatch, Svetlana; Roberts, Ann; Davis, Timothy J.; Gómez, Daniel E.

    2015-04-01

    We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers.We show how a combination of near- and far-field coupling of the localised surface plasmon resonances in aluminium nanoparticles deposited on TiO2 films greatly enhances the visible light photocatalytic activity of the semiconductor material. We demonstrate two orders of magnitude enhancement in the rate of decomposition of methylene blue under visible light illumination when the surface of TiO2 films is decorated with gratings of Al nanoparticle dimers. Electronic supplementary information (ESI) available: Detailed information on estimates of hot-electron injection efficiencies, electrodynamic simulations, sample preparation, spectroscopic and structural characterization and photocatalytic experiments. See DOI: 10.1039/c5nr01592h

  19. Discovery of surfactants for metal/semiconductor separation of single-wall carbon nanotubes via high-throughput screening.

    PubMed

    Tanaka, Takeshi; Urabe, Yasuko; Nishide, Daisuke; Kataura, Hiromichi

    2011-11-01

    We report novel surfactants that can be used for the separation of metallic (M) and semiconducting (S) single-wall carbon nanotubes (SWCNTs). Among the M/S separation methods using surfactants in an aqueous solution, sodium dodecyl sulfate plays a key role in density gradient ultracentrifugation (DGU) and agarose gel separations. In this study, we screened 100 surfactants for M/S separation using a high-throughput screening system. We identified five surfactants, which could be used for both DGU and agarose gel separations, suggesting that the basic principle of these separations is common. These surfactants have relatively low dispersibilities, which is likely due to their common structural features, i.e., straight alkyl tails and charged head groups, and appeared to enable M- and S-SWCNTs to be distinguished and separated. These surfactants should stimulate research in this field and extend the application of electrically homogeneous SWCNTs not only for electronics but also for biology and medicine. PMID:21980975

  20. Characterization of the metal-semiconductor interface of gold contacts on CdZnTe formed by electroless deposition

    NASA Astrophysics Data System (ADS)

    Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

    2015-06-01

    Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These applications have demanding energy and spatial resolution requirements that are not always met by the metal contacts deposited on the CdZnTe. To improve the contacts, the interface formed between metal and semiconductor during contact deposition must be better understood. Gold has a work function closely matching that of high resistivity CdZnTe and is a popular choice of contact metal. Gold contacts are often formed by electroless deposition however this forms a complex interface. The prior CdZnTe surface preparation, such as mechanical or chemo-mechanical polishing, and electroless deposition parameters, such as gold chloride solution temperature, play important roles in the formation of the interface and are the subject of the presented work. Techniques such as focused ion beam (FIB) cross section imaging, transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and current  -  voltage (I-V) analysis have been used to characterize the interface. It has been found that the electroless reaction depends on the surface preparation and for chemo-mechanically polished (1 1 1) CdZnTe, it also depends on the A/B face identity. Where the deposition occurred at elevated temperature, the deposited contacts were found to produce a greater leakage current and suffered from increased subsurface voiding due to the formation of cadmium chloride.

  1. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiO(x) van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed.

    PubMed

    Lee, Hee Sung; Baik, Seung Su; Lee, Kimoon; Min, Sung-Wook; Jeon, Pyo Jin; Kim, Jin Sung; Choi, Kyujin; Choi, Hyoung Joon; Kim, Jae Hoon; Im, Seongil

    2015-08-25

    Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and ∼10 layer MoS2 demonstrate intrinsic-like high mobilities of 500-1200 cm(2)/(V s) at a certain low threshold voltage between -1 and -2 V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and ∼5000 A/W, respectively, supporting their high intrinsic mobility results. PMID:26169189

  2. Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal-Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

    NASA Astrophysics Data System (ADS)

    Meng, C. C.; Su, J. Y.; Yang, S. M.

    2005-09-01

    The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior. GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter Cgs while gate contour affects Cgd. The breakdown voltage has strong dependence on gate contour and little dependence on gate length.

  3. Effects of variations in precursor concentration on the growth of rutile TiO2 nanorods on Si substrate with fabricated fast-response metal-semiconductor-metal UV detector

    NASA Astrophysics Data System (ADS)

    Selman, Abbas M.; Hassan, Z.

    2015-06-01

    This study aimed to investigate the effects of variations in precursor concentration (TiCl3 solution) on the structural, morphological, and optical properties of rutile titanium dioxide (TiO2) nanorods and fabricated metal-semiconductor-metal UV detector depending on the optimal sample. The nanorods were prepared from an aqueous solution of titanium (III) chloride (TiCl3) on p-type, (1 1 1)-oriented Si substrates at different concentrations of TiCl3 solutions (2, 3, 4, and 5 mM). The experimental results showed that the TiO2 nanorods grown at 4 mM concentration exhibited optimal structural properties. A fast-response metal-semiconductor-metal UV detector was fabricated by depositing Pt contacts on the front of the optimal sample via RF reactive magnetron sputtering. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias voltage, the device showed 44.4 sensitivity. In addition, the internal gain was 1.45, and the photoresponse peak was 70 mA/W. The response and the recovery times were calculated to be 7.8 ms upon illumination to a pulse UV light (365 nm) at 5 V bias voltage.

  4. Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers

    PubMed Central

    Lee, Young Keun; Lee, Hyosun; Park, Jeong Young

    2014-01-01

    We demonstrate a tandem-structured, hot electron based photovoltaic cell with double Schottky barriers. The tandem-structured, hot electron based photovoltaic cell is composed of two metal/semiconductor interfaces. Two types of tandem cells were fabricated using TiO2/Au/Si and TiO2/Au/TiO2, and photocurrent enhancement was detected. The double Schottky barriers lead to an additional pathway for harvesting hot electrons, which is enhanced through multiple reflections between the two barriers with different energy ranges. In addition, light absorption is improved by the band-to-band excitation of both semiconductors with different band gaps. Short-circuit current and energy conversion efficiency of the tandem-structured TiO2/Au/Si increased by 86% and 70%, respectively, compared with Au/Si metal/semiconductor nanodiodes, showing an overall solar energy conversion efficiency of 5.3%. PMID:24694838

  5. Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

    NASA Technical Reports Server (NTRS)

    Milliken, A. M.; Manion, S. J.; Kaiser, W. J.; Bell, L. D.; Hecht, M. H.

    1992-01-01

    Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

  6. Electronic polymers in lipid membranes

    PubMed Central

    Johansson, Patrik K.; Jullesson, David; Elfwing, Anders; Liin, Sara I.; Musumeci, Chiara; Zeglio, Erica; Elinder, Fredrik; Solin, Niclas; Inganäs, Olle

    2015-01-01

    Electrical interfaces between biological cells and man-made electrical devices exist in many forms, but it remains a challenge to bridge the different mechanical and chemical environments of electronic conductors (metals, semiconductors) and biosystems. Here we demonstrate soft electrical interfaces, by integrating the metallic polymer PEDOT-S into lipid membranes. By preparing complexes between alkyl-ammonium salts and PEDOT-S we were able to integrate PEDOT-S into both liposomes and in lipid bilayers on solid surfaces. This is a step towards efficient electronic conduction within lipid membranes. We also demonstrate that the PEDOT-S@alkyl-ammonium:lipid hybrid structures created in this work affect ion channels in the membrane of Xenopus oocytes, which shows the possibility to access and control cell membrane structures with conductive polyelectrolytes. PMID:26059023

  7. A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

    NASA Technical Reports Server (NTRS)

    Savich, Gregory R.; Simons, Rainee N.

    2006-01-01

    Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

  8. Metal-semiconductor-transition observed in Bi{sub 2}Ca(Sr, Ba){sub 2}Co{sub 2}O{sub 8+δ} single crystals

    SciTech Connect

    Dong, Song-Tao; Zhang, Bin-Bin; Zhang, Lun-Yong; Yao, Shu-Hua E-mail: shyao@nju.edu.cn; Zhou, Jian; Zhang, Shan-Tao; Gu, Zheng-Bin; Chen, Yan-Feng; Chen, Y. B. E-mail: shyao@nju.edu.cn

    2014-07-28

    Electrical property evolution of Bi{sub 2}AE{sub 2}Co{sub 2}O{sub 8+δ} single crystals (AE = Ca, Sr and Ba) is systematically explored. When AE changes from Ca to Ba, the electrical property of Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+δ} and Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} demonstrates semiconductor-like properties. But Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} shows the metallic behavior. Analysis of temperature-dependent resistance substantiates that from metallic Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} to semiconductor-like Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} can be attributed to Anderson localization. However the semiconductor behaviour of Bi{sub 2}Sr{sub 2}Co{sub 2}O{sub 8+δ} and Bi{sub 2}Ca{sub 2}Co{sub 2}O{sub 8+δ} is related to electronic correlations effect that is inferred by large negative magnetoresistance (∼70%). The theoretical electronic structures and valence X-ray photoemission spectroscopy substantiate that there is a relative large density of state around Fermi level in Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} compared with other two compounds. It suggests that Bi{sub 2}Ba{sub 2}Co{sub 2}O{sub 8+δ} is more apt to be metal in this material system.

  9. Visible-light photodecomposition of acetaldehyde by TiO2-coated gold nanocages: plasmon-mediated hot electron transport via defect states.

    PubMed

    Kodiyath, Rajesh; Manikandan, Maidhily; Liu, Lequan; Ramesh, Gubbala V; Koyasu, Satoshi; Miyauchi, Masahiro; Sakuma, Yoshiki; Tanabe, Toyokazu; Gunji, Takao; Duy Dao, Thang; Ueda, Shigenori; Nagao, Tadaaki; Ye, Jinhua; Abe, Hideki

    2014-12-21

    Skeletal gold nanocages (Au NCs) are synthesized and coated with TiO2 layers (TiO2-Au NCs). The TiO2-Au NCs exhibit enhanced photodecomposition activity toward acetaldehyde under visible light (>400 nm) illumination because hot electrons are generated over the Au NCs by local surface plasmon resonance (LSPR) and efficiently transported across the metal/semiconductor interface via the defect states of TiO2. PMID:25357137

  10. Hot Electron Transport Properties of Thin Copper Films Using Ballistic Electron Emission Microscopy

    NASA Astrophysics Data System (ADS)

    Garramone, J. J.; Abel, J. R.; Sitnitsky, I. L.; Zhao, L.; Appelbaum, I.; Labella, V. P.

    2009-03-01

    Copper is widely used material for electrical interconnects within integrated circuits and recently as a base layer for hot electron spin injection and readout into silicon. Integral to both their applications is the knowledge of the electron scattering length. To the best of our knowledge, little work exists that directly measures the scattering length of electrons in copper. In this study we used ballistic electron emission microscopy (BEEM) to measure the hot electron attenuation length of copper thin films deposited on Si(001). BEEM is a three terminal scanning tunneling microcopy (STM) based technique that can measure transport and Schottky heights of metal/semiconductor systems. We find a Schottky height of 0.67 eV and an attenuation length approaching 40 nm just above the Schottky height at 77 K. We also measure a decrease in the attenuation length with increasing tip bias to determine the relative roles of inelastic and elastic scattering.

  11. Tight-binding approach to strain-dependent DNA electronics

    NASA Astrophysics Data System (ADS)

    Malakooti, Sadeq; Hedin, Eric; Joe, Yong

    2013-07-01

    Small mechanical strain perturbations are considered in calculations of the poly(G)-poly(C) DNA molecular electronic structure, using a tight-binding framework in conjunction with the theories of Slater-Koster and linear elasticity. Results reveal a strain-induced band gap for DNA which is linearly dependent on the induced strain. Local density of states calculations expose that the contribution of the guanine-cytosine base pairs in the charge transport mechanism is significantly enhanced relative to the backbones when DNA is compressed. Transport investigations also disclose a strain-induced metal-semiconductor transition for the DNA molecule, which suggests possible potential uses for sensing applications.

  12. Conductive atomic force microscopy study of local electronic transport in ZnTe thin films

    SciTech Connect

    Kshirsagar, Sachin D.; Krishna, M. Ghanashyam; Tewari, Surya P.

    2013-02-05

    ZnTe thin films obtained by the electron beam evaporation technique were subjected to thermal annealing at 500 Degree-Sign C for 2 hours. The as deposited films were amorphous but transformed to the crystalline state under influence of the thermal treatment. There is increase in optical absorption due to the heat treatment caused by increase in free carrier concentration. Conductive atomic force microscopy shows the presence of electronic inhomogeneities in the films. This is attributed to local compositional variations in the films. I-V analysis in these systems indicates formation of Schottky junction at the metal semiconductor (M-S) interface.

  13. Nanoscale heat transport via electrons and phonons by molecular dynamics simulations

    NASA Astrophysics Data System (ADS)

    Lin, Keng-Hua

    Nanoscale heat transport has become a crucial research topic due to the growing importance of nanotechnology for manufacturing, energy conversion, medicine and electronics. Thermal transport properties at the nanoscale are distinct from the macroscopic ones since the sizes of nanoscale features, such as free surfaces and interfaces, are comparable to the wavelengths and mean free paths of the heat carriers (electrons and phonons), and lead to changes in thermal transport properties. Therefore, understanding how the nanoscale features and energy exchange between the heat carriers affect thermal transport characteristics are the goals of this research. Molecular dynamics (MD) is applied in this research to understand the details of nanoscale heat transport. The advantage of MD is that the size effect, anharmonicity, atomistic structure, and non-equilibrium behavior of the system can all be captured since the dynamics of atoms are described explicitly in MD. However, MD neglects the thermal role of electrons and therefore it is unable to describe heat transport in metal or metal-semiconductor systems accurately. To address this limitation of MD, we develop a method to simulate electronic heat transport by implementing electronic degrees of freedom to MD. In this research, nanoscale heat transport in semiconductor, metal, and metal-semiconductor systems is studied. Size effects on phonon thermal transport in SiGe superlattice thin films and nanowires are studied by MD. We find that, opposite to the macroscopic trend, superlattice thin films can achieve lower thermal conductivity than nanowires at small scales due to the change of phonon nature caused by adjusting the superlattice periodic length and specimen length. Effects of size and electron-phonon coupling rate on thermal conductivity and thermal interface resistivity in Al and model metal-semiconductor systems are studied by MD with electronic degrees of freedom. The results show that increasing the specimen

  14. Embedding plasmonic nanostructure diodes enhances hot electron emission.

    PubMed

    Knight, Mark W; Wang, Yumin; Urban, Alexander S; Sobhani, Ali; Zheng, Bob Y; Nordlander, Peter; Halas, Naomi J

    2013-04-10

    When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices. PMID:23452192

  15. Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

    NASA Astrophysics Data System (ADS)

    Fukutani, K.; Sato, T.; Galiy, P. V.; Sugawara, K.; Takahashi, T.

    2016-05-01

    We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m*=0.16 m0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

  16. Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser

    NASA Astrophysics Data System (ADS)

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, L.; Bittner, M.; Létal, V.; Vorlíček, V.; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E. L.; Schneidmiller, E. A.; Treusch, R.; Yurkov, M. V.

    2007-02-01

    The results of a study of irreversible changes induced at surfaces of metals, semiconductors, and insulators by extreme ultraviolet (λ<100nm) ultrashort pulses provided by TESLA Test Facility Free-Electron Laser, Phase 1 (TTF1 FEL) are reported and discussed. The laser was tuned at 86, 89, and 98nm during the experiments reported here. Energy spectra of ions ejected from the irradiated surfaces are also reported. Special attention is paid to the difference in the ablation behavior of (semi)conductors and insulators that we have observed. The difference is dramatic, while the absorption coefficients are similar for all materials at the TTF1 FEL wavelength.

  17. Spectroscopic Evidence for Exceptional Thermal Contribution to Electron-Beam Induced Fragmentation

    SciTech Connect

    Caldwell, Marissa A.; Haynor, Ben; Aloni, Shaul; Ogletree, D. Frank; Wong, H.-S. Philip; Urban, Jeffrey J.; Milliron, Delia J.

    2010-11-16

    While electron beam induced fragmentation (EBIF) has been reported to result in the formation of nanocrystals of various compositions, the physical forces driving this phenomenon are still poorly understood. We report EBIF to be a much more general phenomenon than previously appreciated, operative across a wide variety of metals, semiconductors and insulators. In addition, we leverage the temperature dependent bandgap of several semiconductors to quantify -- using in situ cathodoluminescence spectroscopy -- the thermal contribution to EBIF, and find extreme temperature rises upwards of 1000K.

  18. Nanocoaxes for Optical and Electronic Devices

    PubMed Central

    Rizal, Binod; Merlo, Juan M.; Burns, Michael J.; Chiles, Thomas C.; Naughton, Michael J.

    2014-01-01

    The evolution of micro/nanoelectronics technology, including the shrinking of devices and integrated circuit components, has included the miniaturization of linear and coaxial structures to micro/nanoscale dimensions. This reduction in the size of coaxial structures may offer advantages to existing technologies and benefit the exploration and development of new technologies. The reduction in the size of coaxial structures has been realized with various permutations between metals, semiconductors and dielectrics for the core, shield, and annulus. This review will focus on fabrication schemes of arrays of metal – nonmetal – metal nanocoax structures using non-template and template methods, followed by possible applications. The performance and scientific advantages associated with nanocoax-based optical devices including waveguides, negative refractive index materials, light emitting diodes, and photovoltaics are presented. In addition, benefits and challenges that accrue from the application of novel nanocoax structures in energy storage, electronic and sensing devices are summarized. PMID:25279400

  19. Electric radiation mapping of silver/zinc oxide nanoantennas by using electron holography

    SciTech Connect

    Sanchez, J. E.; Mendoza-Santoyo, F.; Cantu-Valle, J.; Velazquez-Salazar, J.; José Yacaman, M.; Ponce, A.; González, F. J.; Diaz de Leon, R.

    2015-01-21

    In this work, we report the fabrication of self-assembled zinc oxide nanorods grown on pentagonal faces of silver nanowires by using microwaves irradiation. The nanostructures resemble a hierarchal nanoantenna and were used to study the far and near field electrical metal-semiconductor behavior from the electrical radiation pattern resulting from the phase map reconstruction obtained using off-axis electron holography. As a comparison, we use electric numerical approximations methods for a finite number of ZnO nanorods on the Ag nanowires and show that the electric radiation intensities maps match closely the experimental results obtained with electron holography. The time evolution of the radiation pattern as generated from the nanostructure was recorded under in-situ radio frequency signal stimulation, in which the generated electrical source amplitude and frequency were varied from 0 to 5 V and from 1 to 10 MHz, respectively. The phase maps obtained from electron holography show the change in the distribution of the electric radiation pattern for individual nanoantennas. The mapping of this electrical behavior is of the utmost importance to gain a complete understanding for the metal-semiconductor (Ag/ZnO) heterojunction that will help to show the mechanism through which these receiving/transmitting structures behave at nanoscale level.

  20. The effect of hot electrons and surface plasmons on heterogeneous catalysis.

    PubMed

    Kim, Sun Mi; Lee, Si Woo; Moon, Song Yi; Park, Jeong Young

    2016-06-29

    Hot electrons and surface-plasmon-driven chemistry are amongst the most actively studied research subjects because they are deeply associated with energy dissipation and the conversion processes at the surface and interfaces, which are still open questions and key issues in the surface science community. In this topical review, we give an overview of the concept of hot electrons or surface-plasmon-mediated hot electrons generated under various structural schemes (i.e. metals, metal-semiconductor, and metal-insulator-metal) and their role affecting catalytic activity in chemical reactions. We highlight recent studies on the relation between hot electrons and catalytic activity on metallic surfaces. We discuss possible mechanisms for how hot electrons participate in chemical reactions. We also introduce controlled chemistry to describe specific pathways for selectivity control in catalysis on metal nanoparticles. PMID:27166263

  1. Coulomb blockade in monolayer MoS2 single electron transistor

    NASA Astrophysics Data System (ADS)

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-01

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals.Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08954a

  2. Coulomb blockade in monolayer MoS2 single electron transistor.

    PubMed

    Lee, Kyunghoon; Kulkarni, Girish; Zhong, Zhaohui

    2016-03-31

    Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step. Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling via two tunnel junction barriers. The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement. Our results hold promise for the study of novel quantum transport phenomena in 2D semiconducting atomic layer crystals. PMID:27001412

  3. Dynamics of R.F. Captured Electron Cooled Proton Beams

    SciTech Connect

    Kells, W.; Mills, F.;

    1983-01-01

    In the course of electron cooling experiments at the Electron Cooling Ring (ECR) at Fermilab, several peculiar features of the longitudinal phase space of cold protons (200 MeV) captured in R.F. buckets were observed. Here we present the experimental facts, present a simple theory, and summarize computer simulation results which support the theory and facts. The experimental apparatus and measurement techniques have been described elsewhere. R.F. bunching was achieved with a single PPA, loaded cavity gap driven at harmonic number 6({approx} 7.56 MHz) of the revolution frequency. R.F. voltage could be developed across this gap sufficient to entirely capture even the uncooled circulating proton beam ({delta}p/p FWHM = 0.17%).

  4. Coaxial Ag/ZnO/Ag nanowire for highly sensitive hot-electron photodetection

    SciTech Connect

    Zhan, Yaohui; Li, Xiaofeng Wu, Kai; Wu, Shaolong; Deng, Jiajia

    2015-02-23

    Single-nanowire photodetectors (SNPDs) are mostly propelled by p-n junctions, where the detection wavelength is constrained by the band-gap width. Here, we present a simple doping-free metal/semiconductor/metal SNPD, which shows strong detection tunability without such a material constraint. The proposed hot-electron SNPD exhibits superior optical and electrical advantages, i.e., optically the coaxial design leads to a strong asymmetrical photoabsorption and results in a high unidirectional photocurrent, as desired by the hot-electron collection; electrically the hot-electrons are generated in the region very close to the barrier, facilitating the electrical transport. Rigorous calculations predict an unbiased photoresponsivity of ∼200 nA/mW.

  5. The electronic structure of graphene tuned by hexagonal boron nitrogen layers: Semimetal-semiconductor transition

    NASA Astrophysics Data System (ADS)

    Liu, Ming-Yang; Chen, Qing-Yuan; Ma, Tai; He, Yao; Cao, Chao

    2016-05-01

    The electronic structure of graphene and hexagonal boron nitrogen (G/h-BN) systems have been carefully investigated using the pseudo-potential plane-wave within density functional theory (DFT) framework. We find that the stacking geometries and interlayer distances significantly affect the electronic structure of G/h-BN systems. By studying four stacking geometries, we conclude that the monolayer G/h-BN systems should possess metallic electronic properties. The monolayer G/h-BN systems can be transited from metallicity to semiconductor by increasing h-BN layers. It reveals that the alteration of interlayer distances 2.50-3.50 Å can obtain the metal-semiconductor-semimetal variation and a tunable band gap for G/h-BN composite systems. The band dispersion along K-H direction is analogous to the band of rhombohedral graphite when the G/h-BN systems are semiconducting.

  6. Hot Electron Scattering in Thin Metal Films Utilizing Ballistic Electron Emission Microscopy

    NASA Astrophysics Data System (ADS)

    Durcan, Christopher; Nolting, Westly; Balsano, Robert; Labella, Vincent

    Electron scattering in nm-thick metal films has fundamental and technological importance. Ballistic Electron Emission Microscopy (BEEM) an STM based technique can be utilized to measure the scattering rate and understand the scattering mechanisms. By injecting electrons from the STM tip in the energy range of 0.2 eV- 1.5 eV into the metal base of a metal semiconductor diode and measuring the amount of current collected in the semiconductor a Schottky barrier height can be measured. In addition, by measuring the decay in the collector or BEEM current vs. metal film thickness, an electron attenuation length can be measured. One question has always been; what are these BEEM attenuation lengths sensitive to? Intrinsic properties of the metal, or extrinsic effects such as the structure of the film? By measuring the attenuation length of W and Cr and comparing to prior measurements of Cu, Ag, Au a comparison between the BEEM attenuation length and resistivity can be achieved over an order of magnitude in resistivity. The results show an inverse relationship that one expects for mean free path and resistivity, indicating that BEEM measurements are sensitive to the intrinsic properties of the metal and not solely the structure of the films.

  7. FAST TRACK COMMUNICATION: Synthesis and electron transfer property of sulfhydryl-containing multi-walled carbon nanotube/gold nanoparticle heterojunctions

    NASA Astrophysics Data System (ADS)

    Feng, Xiumei; Hu, Jianqiang; Chen, Xiaohua; Xie, Jingsi; Liu, Yuying

    2009-02-01

    One-dimensional metal/semiconductor heterojunction nanomaterials have opened many new opportunities for future nanodevices because of their novel structures and unique electrical and optical properties. In this work, sulfhydryl-containing multi-walled carbon nanotube/gold nanoparticle (MWCNT/Au) heterojunctions were synthesized in high yield by a sulfhydryl- functionalized self-assembly strategy. The component, size, structure, morphology and bond mode of the MWCNT/Au heterojunctions thus prepared were investigated and demonstrated by transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy-dispersive x-ray spectroscopy, Fourier-transform infrared and UV-visible measurements. Cyclic voltammogram and electrochemical impedance spectroscopy studies indicate that the MWCNT/Au heterojunctions have a novel electron transfer property, which retards electron transfer of the horseradish peroxidase or the ferricyanide in the underlying electrodes. We believe that MWCNT/Au heterojunctions with high stability and a unique electrical property are expected to find potential applications for nanodevices.

  8. The effects on the electronic properties of BN nanoribbon with C-chain substitution doping

    NASA Astrophysics Data System (ADS)

    Wang, Zhiyong; Zhao, Yayun; Sun, Mengyao; Xiao, Jianrong; Lu, Maowang; Wang, Liu; Zeng, Yaping; Long, Mengqiu

    2016-08-01

    The electronic properties of Boron-Nitrogen (BN) nanoribbon with Carbon (C)-chain substitution doping are investigated by performing first-principle calculations based on density functional theory. For the zigzag BN nanoribbon, the spin-unpolarized calculated results exhibit the insulator-semiconductor-metal transition with the number of substitution C-chain increasing. But for the armchair BN nanoribbon in the spin-unpolarized calculations, it is found that it appears the insulator-metal-semiconductor transition. The band gap of BN nanoribbon can be tuned according to the C-chain doping ratio. Interestingly, spin-polarized calculations exhibiting half-metallic may be tuned by changing the number of C-chain in the zigzag BN nanoribbon, opening a possibility in spintronics device based on BN nanoribbon.

  9. Substrate induced modulation of electronic, magnetic and chemical properties of MoSe{sub 2} monolayer

    SciTech Connect

    Wasey, A. H. M. Abdul; Chakrabarty, Soubhik; Das, G. P.

    2014-04-15

    Monolayer of MoSe{sub 2}, having a typical direct band gap of ∼1.5 eV, is a promising material for optoelectronic and solar cell applications. When this 2D semiconductor is supported on transition metal substrates, such as Ni(111) and Cu(111), its electronic structure gets modulated. First principles density functional investigation shows the appearance of de-localized mid-gap states in the density of states. The work function of the semiconductor overlayer gets modified considerably, indicating n-type doping caused by the metal contacts. The charge transfer across the metal-semiconductor junction also significantly enhances the chemical reactivity of the MoSe{sub 2} overlayer, as observed by Hydrogen absorption. Furthermore, for Ni contact, there is a signature of induced magnetism in MoSe{sub 2} monolayer.

  10. Role of interface band structure on hot electron transport

    NASA Astrophysics Data System (ADS)

    Garramone, John J.

    Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal

  11. Theory of hot electron photoemission from graphene

    NASA Astrophysics Data System (ADS)

    Ang, Lay Kee; Liang, Shijun

    Motivated by the development of Schottky-type photodetectors, some theories have been proposed to describe how the hot carriers generated by the incident photon are transported over the Schottky barrier through the internal photoelectric effect. One of them is Fowler's law proposed as early as 1931, which studied the temperature dependence of photoelectric curves of clean metals. This law is very successful in accounting for mechanism of detecting photons of energy lower than the band gap of semiconductor based on conventional metal/semiconductor Schottky diode. With the goal of achieving better performance, graphene/silicon contact-based- graphene/WSe2 heterostructure-based photodetectors have been fabricated to demonstrate superior photodetection efficiency. However, the theory of how hot electrons is photo-excited from graphene into semiconductor remains unknown. In the current work, we first examine the photoemission process from suspended graphene and it is found that traditional Einstein photoelectric effect may break down for suspended graphene due to the unique linear band structure. Furthermore, we find that the same conclusion applies for 3D graphene analog (e.g. 3D topological Dirac semi-metal). These findings are very useful to further improve the performance of graphene-based photodetector, hot-carrier solar cell and other kinds of sensor.

  12. Electronic measurement and control of spin transport in silicon

    NASA Astrophysics Data System (ADS)

    Appelbaum, Ian; Huang, Biqin; Monsma, Douwe J.

    2007-05-01

    The spin lifetime and diffusion length of electrons are transport parameters that define the scale of coherence in spintronic devices and circuits. As these parameters are many orders of magnitude larger in semiconductors than in metals, semiconductors could be the most suitable for spintronics. So far, spin transport has only been measured in direct-bandgap semiconductors or in combination with magnetic semiconductors, excluding a wide range of non-magnetic semiconductors with indirect bandgaps. Most notable in this group is silicon, Si, which (in addition to its market entrenchment in electronics) has long been predicted a superior semiconductor for spintronics with enhanced lifetime and transport length due to low spin-orbit scattering and lattice inversion symmetry. Despite this promise, a demonstration of coherent spin transport in Si has remained elusive, because most experiments focused on magnetoresistive devices; these methods fail because of a fundamental impedance mismatch between ferromagnetic metal and semiconductor, and measurements are obscured by other magnetoelectronic effects. Here we demonstrate conduction-band spin transport across 10μm undoped Si in a device that operates by spin-dependent ballistic hot-electron filtering through ferromagnetic thin films for both spin injection and spin detection. As it is not based on magnetoresistance, the hot-electron spin injection and spin detection avoids impedance mismatch issues and prevents interference from parasitic effects. The clean collector current shows independent magnetic and electrical control of spin precession, and thus confirms spin coherent drift in the conduction band of silicon.

  13. Hybrid metal-semiconductor mirror for high power VECSEL

    NASA Astrophysics Data System (ADS)

    Laurain, Alexandre; Gbele, Kokou; Hader, Jorg; Stolz, Wolfgang; Koch, Stephan; Ruiz Perez, Antje; Moloney, Jerome V.

    2016-03-01

    We demonstrate a low thermal impedance hybrid mirror VECSEL. We used only 14 pairs of AlGaAs/AlAs, transparent at the pump wavelength, and we used a patterned mask to deposit pure gold on areas of the chip to be pumped, and Ti/Au on other area to circumvent the poor adhesion of gold on GaAs. A higher gain is observed on an area metallized with pure gold and an output power of 4W was obtained, showing the effectiveness of the metallic mirror and validating the bonding quality. Chip processing and laser characteristics are studied in detail and compared to simulations.

  14. Finite Element Simulation of Metal-Semiconductor-Metal Photodetector

    SciTech Connect

    Guarino, G.; Donaldson, W.R.; Mikulics, M.; Marso, M.; Kordos, P.; Sobolewski, R.

    2009-08-19

    The successful application of finite element analysis to ultrafast optoelectronic devices is demonstrated. Finite element models have been developed for both an alloyed- and surface-contact metal–semiconductor–metal photodetectors. The simulation results agree with previously reported experimental data. The alloyed device, despite having a somewhat larger capacitance, has a non-illuminated region of lower resistance with a more-uniform and deeper-penetrating electric field and carrier transport current. The latter explains, in terms of the equivalent lumped parameters, the experimentally observed faster response of the alloyed device. The model is further used to predict improved responsivity, based on electrode spacing and antireflective coating. We project that increasing the depth of the alloyed contact beyond approximately half of the optical penetration depth will not yield significantly improved responsivity.

  15. Metal semiconductor phase transition in vanadium dioxide nanocrystals

    NASA Astrophysics Data System (ADS)

    Lopez Noriega, Rene

    The goal of this research was to improve the understanding of the submicron VO2 formation in the near surface of a host material and to explore the possibility of size effects in the mechanics of the semiconductor to metal phase transition as well as in the optical properties of VO2. By means of ion implantation and thermal processing, we were able to produce variable-sized nanoscale VO2 precipitates embedded in SiO 2. The transition temperatures were found to be correlated with the size of the precipitates, in such a way that for smaller particles, both transitions were thermally delayed. A review of the energy barriers and other features involved in the transition, led us to conclude that regardless of that exact mechanism, the phase transition must proceed in a heterogeneous fashion. Smaller particles were expected to have a lower chance of containing a nucleation site and thus, they need a greater thermal driving force in order to activate them. VO2 precipitates were not only controlled in size but as an unexpected result they turned out to be produced in elongated shapes oriented mainly along the implanted surface. This morphology, which was explained in terms of the Bravais-Friedel law of crystal growth, allowed us to understand the optical properties of the precipitates. We concluded that the optical behavior shown by the particles in the SiO2 matrix, was result of a surface plasmon resonance due to the dielectric confinement and metallic character of the VO2 in the high temperature phase. Beside these contributions to material and physical sciences, we have shown that established results for VO2 doping can be applicable to our submicron particles. We were able to successfully control the width of the hysteresis loop by adding Ti ions before the precipitation. We also reached lower switching temperatures by implanting small quantities of W. Ion implantation also proved to be an easy and convenient way to incorporate VO2 nanoparticles into an optical fiber and thin film Si/SiO2 technologies.

  16. High-speed, efficient metal - semiconductor - metal photodetectors

    SciTech Connect

    Collin, St; Pardo, F; Bardou, N; Pelouard, J.-L.; Averin, S V

    2010-08-03

    Design principles and the fabrication technique of highly efficient, high-speed photodetectors based on MSM nanostructures are developed. To efficiently confine light in the region of the strong field as well as to decrease light losses due to reflection from the diode contacts, use is made of a nanoscale interdigital diffraction grating and a multilayer Bragg grating. Measurements of the reflection coefficients and the quantum efficiency for a multilayer structure are in good agreement with theoretical estimates. A record-high quantum efficiency (QE = 46 %) is obtained for high speed MSM photodetectors. The detector has a high spectral selectivity ({Delta}{lambda}{sub 1/2} = 17 nm) at a wavelength of 800 nm. Taking into account the diode capacitance and the drift time of photogenerated carriers, the performance of the detectors under study is {approx} 500 GHz. The low level of the dark current density in the structures under study (j={sup 1} pA {mu}m{sup -2}) makes it possible to realise on their basis highly sensitive, high-speed selective detectors of optical radiation.

  17. Superatoms and Metal-Semiconductor Motifs for Cluster Materials

    SciTech Connect

    Castleman, A. W.

    2013-10-11

    A molecular understanding of catalysis and catalytically active materials is of fundamental importance in designing new substances for applications in energy and fuels. We have performed reactivity studies and ultrafast ionization and coulomb explosion studies on a variety of catalytically-relevant materials, including transition metal oxides of Fe, Co, Ni, Cu, Ti, V, Nb, and Ta. We demonstrate that differences in charge state, geometry, and elemental composition of clusters of such materials determine chemical reactivity and ionization behavior, crucial steps in improving performance of catalysts.

  18. Hot-electron-mediated surface chemistry: toward electronic control of catalytic activity.

    PubMed

    Park, Jeong Young; Kim, Sun Mi; Lee, Hyosun; Nedrygailov, Ievgen I

    2015-08-18

    nanoparticles on oxide supports and Pt-CdSe-Pt nanodumbbells. We show that the accumulation or depletion of hot electrons on metal nanoparticles, in turn, can also influence catalytic reactions. Mechanisms suggested for hot-electron-induced chemical reactions on a photoexcited plasmonic metal are discussed. We propose that the manipulation of the flow of hot electrons by changing the electrical characteristics of metal-oxide and metal-semiconductor interfaces can give rise to the intriguing capability of tuning the catalytic activity of hybrid nanocatalysts. PMID:26181684

  19. Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors

    NASA Astrophysics Data System (ADS)

    Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Ye, Gang; Mohan Manoj Kumar, Chandra; Jesudas Anand, Mulagumoottil; Liu, Zhi Hong

    2015-04-01

    This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current-voltage (I-V) measurements reveal that the conduction occurs primarily via thermionic emission (TE). The extracted mean barrier height (ΦB) values are 0.113 and 0.121 eV and the mean contact resistance (Rc) values are 0.24 and 0.28 Ω mm, for annealing temperatures of 850 and 900 °C, respectively. The low Rc is attributed to the formation of low work function TixSiy at the metal-semiconductor interface. The high-resolution transmission electron microscopy (HR-TEM) and energy-dispersive X-ray spectroscopy (EDX) analysis provide further structural evidence in support of the TE mechanism.

  20. Equivalent ambipolar carrier injection of electrons and holes with Au electrodes in air-stable field effect transistors

    SciTech Connect

    Kanagasekaran, Thangavel E-mail: Shimotani@m.tohoku.ac.jp Ikeda, Susumu; Kumashiro, Ryotaro; Shimotani, Hidekazu E-mail: Shimotani@m.tohoku.ac.jp Shang, Hui; Tanigaki, Katsumi E-mail: Shimotani@m.tohoku.ac.jp

    2015-07-27

    Carrier injection from Au electrodes to organic thin-film active layers can be greatly improved for both electrons and holes by nano-structural surface control of organic semiconducting thin films using long-chain aliphatic molecules on a SiO{sub 2} gate insulator. In this paper, we demonstrate a stark contrast for a 2,5-bis(4-biphenylyl)bithiophene (BP2T) active semiconducting layer grown on a modified SiO{sub 2} dielectric gate insulator between two different modifications of tetratetracontane and poly(methyl methacrylate) thin films. Important evidence that the field effect transistor (FET) characteristics are independent of electrode metals with different work functions is given by the observation of a conversion of the metal-semiconductor contact from the Schottky limit to the Bardeen limit. An air-stable light emitting FET with an Au electrode is demonstrated.

  1. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Synthesis and electrical characterization of tungsten oxide nanowires

    NASA Astrophysics Data System (ADS)

    Huang, Rui; Zhu, Jing; Yu, Rong

    2009-07-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. I-V curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the I-V curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I-V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  2. Electronic and magnetic properties of early transition-metal substituted iron-cyclopentadienyl sandwich molecular wires: Parity-dependent half-metallicity

    NASA Astrophysics Data System (ADS)

    Li, Yuanchang; Zhou, Gang; Wu, Jian; Duan, Wenhui

    2011-07-01

    Electronic and magnetic properties of early transition metals (V, Ti, Sc)-FekCpk + 1 sandwich molecular wires (SMWs) are investigated by means of ab initio calculations. It is found that all SMWs favor a ferromagnetic ground state. Significantly, V-FekCpk + 1 SMWs are either half-metallic or semiconducting, dependent upon the parity (even or odd) of the number (k) of Fe atoms in the unit cell of SMWs. This parity oscillation of conductive properties results from the combined effects of the band-folding and gap-opening at the Brillouin-zone boundary of one-dimensional materials. In contrast, Sc-FekCpk + 1 and Ti-FekCpk + 1 SMWs are always semiconducting. Our work may open up the way toward half metal/semiconductor heterostructures with perfect atomic interface.

  3. Strongly correlated valence electrons and core-level chemical bonding of Lithium at terapascal pressures

    NASA Astrophysics Data System (ADS)

    Hu, Anguang; Zhang, Fan

    2015-03-01

    As the simplest pure metal, lithium exhibits some novel properties on electrical conductivity and crystal structures under high pressure. All-electron density functional theory simulations, recently developed by using the linear combination of localized Slater atomic orbitals, revealed that the bandwidth of its valence bands remains almost unchanged within about 3.5 eV even up to a terapascal pressure range. This indicates that the development from delocalized to strongly correlated electronic systems takes place under compression, resulting in metal-semiconductor and superconductivity transitions together with a sequence of new high-pressure crystal phases, discovered experimentally. In contrast to the valence bands, the core-level bands become broadening up to about 10 eV at terapascal pressures. It means the transformation from chemical non-bonding to bonding for core electrons. Thus, dense lithium under compression can be characterized as core-level chemical bonding and a completely new class of strongly correlated materials with narrow bands filled in s-electron shells only.

  4. Effect of interfaces on electron transport properties of MoS2-Au Contacts

    NASA Astrophysics Data System (ADS)

    Aminpour, Maral; Hapala, Prokop; Le, Duy; Jelinek, Pavel; Rahman, Talat S.; Rahman's Group Collaboration; Nanosurf Lab Collaboration

    2014-03-01

    Single layer MoS2 is a promising material for future electronic devices such as transistors since it has good transport characteristics with mobility greater than 200 cm-1V-1s-1 and on-off current ratios up to 108. However, before MoS2 can become a mainstream electronic material for the semiconductor industry, the design of low resistive metal-semiconductor junctions as contacts of the electronic devices needs to be addressed and studied systematically. We have examined the effect of Au contacts on the electronic transport properties of single layer MoS2 using density functional theory in combination with the non-equilibrium Green's function method. The Schottky barrier between Au contact and MoS2, transmission spectra, and I-V curves will be reported and discussed as a function of MoS2 and Au interfaces of varying geometry. This work is supported in part by the US Department of Energy under grant DE-FG02-07ER15842.

  5. On the application of quantum transport theory to electron sources.

    PubMed

    Jensen, Kevin L

    2003-01-01

    Electron sources (e.g., field emitter arrays, wide band-gap (WBG) semiconductor materials and coatings, carbon nanotubes, etc.) seek to exploit ballistic transport within the vacuum after emission from microfabricated structures. Regardless of kind, all sources strive to minimize the barrier to electron emission by engineering material properties (work function/electron affinity) or physical geometry (field enhancement) of the cathode. The unique capabilities of cold cathodes, such as instant ON/OFF performance, high brightness, high current density, large transconductance to capacitance ratio, cold emission, small size and/or low voltage operation characteristics, commend their use in several advanced devices when physical size, weight, power consumption, beam current, and pulse repletion frequency are important, e.g., RF power amplifier such as traveling wave tubes (TWTs) for radar and communications, electrodynamic tethers for satellite deboost/reboost, and electric propulsion systems such as Hall thrusters for small satellites. The theoretical program described herein is directed towards models to evaluate emission current from electron sources (in particular, emission from WBG and Spindt-type field emitter) in order to assess their utility, capabilities and performance characteristics. Modeling efforts particularly include: band bending, non-linear and resonant (Poole-Frenkel) potentials, the extension of one-dimensional theory to multi-dimensional structures, and emission site statistics due to variations in geometry and the presence of adsorbates. Two particular methodologies, namely, the modified Airy approach and metal-semiconductor statistical hyperbolic/ellipsoidal model, are described in detail in their present stage of development. PMID:12535543

  6. Towards a fundamental understanding of inhomogeneous interfaces utilizing ballistic electron emission microscopy

    NASA Astrophysics Data System (ADS)

    Balsano, Robert

    A fundamental understanding of charge transport across metal/semiconductor interfaces is of great technological and scientific importance. Metal/semiconductor, or Schottky barrier devices are widely utilized in sensing applications and power electronics. Additionally, Schottky barriers appear in resistive memory technology and current transistor technology. Although Schottky interfaces are ubiquitous, the effects of spatially variant interfaces on the measured Schottky barrier height (SBH) are not entirely understood. For these reasons it is necessary to explore the spatial variation at Schottky interfaces at the nanoscale. Ballistic electron emission microscopy (BEEM) is a three terminal scanning tunneling microscopy (STM) technique used to measure hot carrier transport through materials and across interfaces. BEEM has been used to directly measure the SBH with nanoscale spatial resolution, displaying the natural SBH inhomogeneity. This work explores the utility of SBH mapping with BEEM in identifying interface composition with electrostatic measurements. In the context of the band gap of the semiconductor, a self-consistent test of SBH measurement is presented for Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes. This was accomplished by comparing the sum of the measured SBHs of p-type and n-type samples to the band gap of Si. These measurements are taken at 80 K and verify agreement with the Bell-Kaiser (BK) t to the SBH. Additional 11.7 nm resolution SBH mapping was performed on Au/Ag/Si(001) diodes at 80 K. It was found that the SBH in regions rich in Ag surrounded by Au was raised due to pinch-off effects. Pinch-off is treated in the context of an electrostatic perturbation and is shown to have considerable impact on the samples in this study. By analyzing the statistical distribution of the local SBH, the interface chemical composition is approximated from the relative SBH contribution. The ballistic electron emission microscopy (BEEM) data agreed with

  7. Solar energy conversion via hot electron internal photoemission in metallic nanostructures: Efficiency estimates

    SciTech Connect

    Leenheer, Andrew J.; Narang, Prineha; Atwater, Harry A.; Lewis, Nathan S.

    2014-04-07

    Collection of hot electrons generated by the efficient absorption of light in metallic nanostructures, in contact with semiconductor substrates can provide a basis for the construction of solar energy-conversion devices. Herein, we evaluate theoretically the energy-conversion efficiency of systems that rely on internal photoemission processes at metal-semiconductor Schottky-barrier diodes. In this theory, the current-voltage characteristics are given by the internal photoemission yield as well as by the thermionic dark current over a varied-energy barrier height. The Fowler model, in all cases, predicts solar energy-conversion efficiencies of <1% for such systems. However, relaxation of the assumptions regarding constraints on the escape cone and momentum conservation at the interface yields solar energy-conversion efficiencies as high as 1%–10%, under some assumed (albeit optimistic) operating conditions. Under these conditions, the energy-conversion efficiency is mainly limited by the thermionic dark current, the distribution of hot electron energies, and hot-electron momentum considerations.

  8. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    SciTech Connect

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong Ji, An; Yang, Fuhua

    2014-03-15

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  9. High speed photodetectors based on a two-dimensional electron/hole gas heterostructure

    NASA Astrophysics Data System (ADS)

    Gallo, Eric M.; Cola, Adriano; Quaranta, Fabio; Spanier, Jonathan E.

    2013-04-01

    We report on high-speed metal-semiconductor-metal (MSM) resonant cavity enhanced photodetectors based on Schottky-contacted (Al,In)GaAs heterostructures containing both electron and hole quantum wells. Interdigitated detectors were fabricated and characterized with and without an underlying Distributed Bragg Reflector (DBR). All detectors had very low dark currents and high linear responsivities. The fastest measured temporal response with a 16 ps full-width at half-maximum and a 29 ps fall time was demonstrated on a device with 1 μm gap between electrodes and an underlying DBR. Single quantum well detectors have previously demonstrated increased responsivity and speed but were limited by a slow decaying tail in the high speed photoresponse, attributed to the long collection path of minority carriers. The use of an electron and hole well, separated by a 110 nm absorption region as well as an underlying DBR, eliminates the slow tail by providing an enhanced collection path for both optically generated electrons and holes. Here, we present the fabricated device structure along with the DC and high speed photoresponse under varying incident powers. We briefly compare these results to those of the previous single well devices and attribute improvements in the time response tail to enhanced diffusion created by the presence of the separated dual well structure.

  10. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  11. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    SciTech Connect

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-09-14

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

  12. First-principles study of the electronic and the magnetic properties of Cr-doped wurtzite cadmium sulfide (Cd1- x Cr x S, x = 12.5% and 6.25%)

    NASA Astrophysics Data System (ADS)

    Nabi, Azeem; Majid, Abdul

    2015-08-01

    The electronic and the magnetic properties of Cr-doped wurtzite cadmium sulfide (Cd1- x Cr x S) at different concentrations ( x = 12.5% and 6.25%) are investigated in the frame work of the generalized gradient approximation (GGA), its extension through on-site Hubbard U interactions (GGA+U), and the Tran Blaha modified Becke-Johnson (TB-mBJ) potential. The ferromagnetic exchange interactions between Cr-Cr atoms via S atoms are studied. The magnetic moments on these atoms are studied in detail by using different charge analysis techniques. The p-d hybridization reduces the local magnetic moment on Cr from its free space charge value and produces a small local magnetic moment on the nonmagnetic Cd and S host sites. Cr-doped CdS provides a half-metallic semiconductor.

  13. Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

    NASA Astrophysics Data System (ADS)

    Li, Yang; Ng, Geok Ing; Arulkumaran, Subramaniam; Mohan Manoj Kumar, Chandra; Ang, Kian Siong; Jesudas Anand, Mulagumoottil; Wang, Hong; Hofstetter, René; Ye, Gang

    2013-11-01

    Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases drastically from the annealing temperature of 700 to 850 °C and slightly increases from 875 to 900 °C. The sample annealed at 850 °C exhibited the lowest Rc of 0.22±0.03 Ω·mm [specific contact resistivity, ρc=(0.78±0.22)×10-6 Ω·cm2] with a smooth surface morphology (RMS roughness ˜5.5 nm). The low Rc is due to the formation of TixSiy and the intermixing of TixSiy with the bottom Ta layer at the metal/semiconductor interface.

  14. Graphene nanoribbon blends with P3HT for organic electronics

    NASA Astrophysics Data System (ADS)

    El Gemayel, Mirella; Narita, Akimitsu; Dössel, Lukas F.; Sundaram, Ravi S.; Kiersnowski, Adam; Pisula, Wojciech; Hansen, Michael Ryan; Ferrari, Andrea C.; Orgiu, Emanuele; Feng, Xinliang; Müllen, Klaus; Samorì, Paolo

    2014-05-01

    In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed N = 18 armchair graphene nanoribbons (GNRs). The latter, prepared by a bottom-up solution synthesis, are expected to form solid aggregates which cannot be easily interfaced with metallic electrodes, limiting charge injection at metal-semiconductor interfaces, and are characterized by a finite size, thus by grain boundaries, which negatively affect the charge transport within the film. Both P3HT and GNRs are soluble/dispersible in organic solvents, enabling the use of a single step co-deposition process. The resulting OFETs show a three-fold increase in the charge carrier mobilities in blend films, when compared to pure P3HT devices. This behavior can be ascribed to GNRs, and aggregates thereof, facilitating the transport of the charges within the conduction channel by connecting the domains of the semiconductor film. The electronic characteristics of the devices such as the Ion/Ioff ratio are not affected by the addition of GNRs at different loads. Studies of the electrical characteristics under illumination for potential use of our blend films as organic phototransistors (OPTs) reveal a tunable photoresponse. Therefore, our strategy offers a new method towards the enhancement of the performance of OFETs, and holds potential for technological applications in (opto)electronics.In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the

  15. Atomic scale structure and chemistry of interfaces by Z-contrast imaging and electron energy loss spectroscopy in the STEM

    SciTech Connect

    McGibbon, M.M.; Browning, N.D.; Chisholm, M.F.; Pennycook, S.J.

    1993-12-01

    The macroscopic properties of many materials are controlled by the structure and chemistry at the grain boundaries. A basic understanding of the structure-property relationship requires a technique which probes both composition and chemical bonding on an atomic scale. The high-resolution Z-contrast imaging technique in the scanning transmission electron microscope (STEM) forms an incoherent image in which changes in atomic structure and composition can be interpreted intuitively. This direct image allows the electron probe to be positioned over individual atomic columns for parallel detection electron energy loss spectroscopy (PEELS) at a spatial resolution approaching 0.22nm. The bonding information which can be obtained from the fine structure within the PEELS edges can then be used in conjunction with the Z-contrast images to determine the structure at the grain boundary. In this paper we present 3 examples of correlations between the structural, chemical and electronic properties at materials interfaces in metal-semiconductor systems, superconducting and ferroelectric materials.

  16. Chemical bonding, interdiffusion and electronic structure at InP, GaAs, and Si-metal interfaces

    NASA Astrophysics Data System (ADS)

    Brillson, L. J.

    1985-10-01

    An experimental program investigates the interface electronic states and band structure at Germanium Arsenides, Indium Phosphides and Silicon-metal interfaces formed by chemical reaction and interdiffusion at room temperature, elevated temperatures, as well as following pulsed-laser annealing; uses soft X-ray photoemission spectroscopy (SXPS) and Auger electron spectroscopy (AES)/depth profiling to characterize atomic redistribution and new chemical bonding near the surfaces and interfaces on an atomic scale; refines the technique of cathodoluminescence spectroscopy (CLS) for investigations of new compound and defect formation at buried metal-semiconductor interfaces; and employs temperature-dependent current-voltage and capacitance-voltage measurements to characterize the electronic properties and spatial distribution of interface states of metal-InP interfaces prepared and processed under carefully controlled conditions. The work can be grouped into four areas: (1) chemical and electronic structure of buried III-V and II-VI compound semiconductor-metal interfaces, (2) localized chemical reactions at Aluminum interfaces with III-V compound semiconductors promoted by pulsed-laser annealing as well as laser-induced oxidation of Si, (3) eletrical characterization of the UHV-prepared Al-InP (110) interface, and (4) control of competitive Ti-Si and Ti-SiO2 interfacial reactions by rapid thermal annealing.

  17. Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices

    NASA Astrophysics Data System (ADS)

    Kumar, Ravinder; Engles, Derick

    2015-05-01

    In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.

  18. Line defects in graphene: How doping affects the electronic and mechanical properties

    NASA Astrophysics Data System (ADS)

    Berger, Daniel; Ratsch, Christian

    2016-06-01

    Graphene and carbon nanotubes have extraordinary mechanical and electronic properties. Intrinsic line defects such as local nonhexagonal reconstructions or grain boundaries, however, significantly reduce the tensile strength, but feature exciting electronic properties. Here, we address the properties of line defects in graphene from first principles on the level of full-potential density-functional theory, and assess doping as one strategy to strengthen such materials. We carefully disentangle the global and local effect of doping by comparing results from the virtual crystal approximation with those from local substitution of chemical species, in order to gain a detailed understanding of the breaking and stabilization mechanisms. We find that doping primarily affects the occupation of the frontier orbitals. Occupation through n -type doping or local substitution with nitrogen increases the ultimate tensile strength significantly. In particular, it can stabilize the defects beyond the ultimate tensile strength of the pristine material. We therefore propose this as a key strategy to strengthen graphenic materials. Furthermore, we find that doping and/or applying external stress lead to tunable and technologically interesting metal/semiconductor transitions.

  19. Monolithic integration of 1.3-μm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

    NASA Astrophysics Data System (ADS)

    Fink, Thomas; Hurm, Volker; Raynor, Brian; Koehler, Klaus; Benz, Willy; Ludwig, M.

    1995-04-01

    For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometers have been fabricated successfully on GaAs substrates using InGaAs metal-semiconductor-metal (MSM) photodiodes and AlGaAs/GaAs/AlGaAs high-electron-mobility transistors (HEMTs). Using molecular beam epitaxy (MBE), the photodetector layers were grown on top of a double (delta) -doped AlGaAs/GaAs/AlGaAs HEMT structure which allows the fabrication of enhancement and depletion field effect transistors. The photoabsorbing InGaAs layer was grown at 500 degree(s)C. To fabricate the optoelectronic receivers, first, an etch process using a combination of non-selective wet etching and selective reactive ion etching was applied to produce mesas for the photoconductors and to uncover the HEMT structure in all other areas. For the electronic circuits, our well-established HEMT process for 0.3-micrometers transistor gates was used which includes electron-beam lithography for gate definition and optical lithography for NiCr thin films resistors, capacitors, and inductors. The interdigitated MSM photodiode fingers were also fabricated using electron-beam lithography. For interconnecting the electronic circuits and the photodetectors, air bridges were employed. The entire process was performed on 2-inch wafers with more than 90% yield of functional receivers. The finished receiver--basically an MSM photodetector linked to a transimpedance amplifier--is operational at an incident wavelength of 1.3 micrometers at data rates up to 1.2 Gbit/s. The sensitivity of the detectors is 0.16 A/W at a 10 V bias.

  20. Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

    SciTech Connect

    Parui, Subir E-mail: l.hueso@nanogune.eu; Atxabal, Ainhoa; Ribeiro, Mário; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E. E-mail: l.hueso@nanogune.eu

    2015-11-02

    We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.

  1. Computational design of p-type contacts for MoS2-based electronic devices

    NASA Astrophysics Data System (ADS)

    Kumar, Priyank; Musso, Tiziana; Foster, Adam; Grossman, Jeffrey

    2015-03-01

    The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. A well-known example is MoS2, which has gained significant attention as a channel material for next-generation transistors. While n-type MoS2 field-effect transistors (n-FETs) can be fabricated with relative ease, fabrication of p-FETs remains a challenge as the Fermi-level of elemental metals used as contacts are pinned close to the conduction band, leading to large p-type Schottky barrier heights (SBHs). Using ab initio computations, we design and propose efficient hole contacts utilizing high work function oxide-based hole injection materials, with the aim of advancing p-type MoS2 device technology. Our calculations will highlight the possibility to tune and lower the p-type SBH at the metal/semiconductor interface by controlling the structural properties of oxide materials. Taken together, our results provide an interesting platform for experimental design of next-generation MoS2-based electronic and optoelectronic devices.

  2. Electron radiography

    SciTech Connect

    Merrill, Frank E.; Morris, Christopher

    2005-05-17

    A system capable of performing radiography using a beam of electrons. Diffuser means receive a beam of electrons and diffuse the electrons before they enter first matching quadrupoles where the diffused electrons are focused prior to the diffused electrons entering an object. First imaging quadrupoles receive the focused diffused electrons after the focused diffused electrons have been scattered by the object for focusing the scattered electrons. Collimator means receive the scattered electrons and remove scattered electrons that have scattered to large angles. Second imaging quadrupoles receive the collimated scattered electrons and refocus the collimated scattered electrons and map the focused collimated scattered electrons to transverse locations on an image plane representative of the electrons' positions in the object.

  3. Low-energy electron diffraction study of Si(111)-(√3x √3)R30∘ -B

    NASA Astrophysics Data System (ADS)

    Marino, K. E.; Huang, Y. T.; Diehl, R. D.; Tu, Weison; Mulugeta, Daniel; Snijders, P. C.; Weitering, H. H.

    2014-03-01

    Metal-semiconductor interfaces are important for the function and manufacture of advanced electronics, such as those used in computers, tablets and phones. They also exhibit many interesting physical phenomena that are interesting from a fundamental point of view, including exotic phases and phase transitions. This study involves the analysis and modeling of the surface structure of a thin film of boron on the Si(111) surface. The addition of metal atoms to the surface of Si(111) simplifies its structure by removing a ``rippling'' that is present on the clean surface. The low-energy electron diffraction (LEED) data were measured at a surface temperature of 80 K at ORNL. The LEED analysis utilized the SATLEED analysis programs. The results are similar to those obtained in an earlier LEED study for this interface, but the precision is higher due to the larger dataset employed., The results of this study will be compared to other studies of this and similar systems. We acknowledge the Eberly College of Science for funding this project. González, Guo, Ortega, Flores, Weitering. Phys. Rev. Lett. 102, 115501 (2009)

  4. Ambient Electronics

    NASA Astrophysics Data System (ADS)

    Sekitani, Tsuyoshi; Someya, Takao

    2012-10-01

    We report the recent research progress and future prospects of flexible and printed electronics, focusing on molecular electronic material-based thin-film transistors, which are expected to usher in a new era of electronics.

  5. Hot-Electron-Induced Highly Efficient O2 Activation by Pt Nanoparticles Supported on Ta2O5 Driven by Visible Light.

    PubMed

    Sakamoto, Hirokatsu; Ohara, Tomoyuki; Yasumoto, Naoki; Shiraishi, Yasuhiro; Ichikawa, Satoshi; Tanaka, Shunsuke; Hirai, Takayuki

    2015-07-29

    Aerobic oxidation on a heterogeneous catalyst driven by visible light (λ >400 nm) at ambient temperature is a very important reaction for green organic synthesis. A metal particles/semiconductor system, driven by charge separation via an injection of "hot electrons (e(hot)(-))" from photoactivated metal particles to semiconductor, is one of the promising systems. These systems, however, suffer from low quantum yields for the reaction (<5% at 550 nm) because the Schottky barrier created at the metal/semiconductor interface suppresses the e(hot)(-) injection. Some metal particle systems promote aerobic oxidation via a non-e(hot)(-)-injection mechanism, but require high reaction temperatures (>373 K). Here we report that Pt nanoparticles (∼5 nm diameter), when supported on semiconductor Ta2O5, promote the reaction without e(hot)(-) injection at room temperature with significantly high quantum yields (∼25%). Strong Pt-Ta2O5 interaction increases the electron density of the Pt particles and enhances interband transition of Pt electrons by absorbing visible light. A large number of photogenerated e(hot)(-) directly activate O2 on the Pt surface and produce active oxygen species, thus promoting highly efficient aerobic oxidation at room temperature. PMID:26158296

  6. The possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.

    PubMed

    Qi, Jing Shan; Huang, Jian Yu; Feng, Ji; Shi, Da Ning; Li, Ju

    2011-05-24

    Graphene is an interesting electronic material. However, flat monolayer graphene does not have significant gap in the electronic density of states, required for a large on-off ratio in logic applications. We propose here a novel device architecture, composed of self-folded carbon nanotube-graphene hybrids, which have been recently observed experimentally in Joule-heated graphene. These experiments demonstrated the feasibility of cutting, folding, and welding few-layer graphene in situ to form all-carbon nanostructures with complex topologies. The electronic gap of self-folded nanotubes can be combined with the semimetallicity of graphene electrodes to form a "metal-semiconductor-metal" junction. By ab initio calculations we demonstrate large energy gaps in the transmission spectra of such junctions, which preserve the intrinsic transport characteristics of the semiconducting nanotubes despite topologically necessary disinclinations at the flat graphene-curved nanotube interface. These all-carbon devices are proposed to be constructed by contact probe cutting and high-temperature annealing and, if produced, would be chemically stable at room temperature under normal gas environments. PMID:21456598

  7. Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS{sub 2} heterostructures

    SciTech Connect

    Guo, Xiaoyan; Yang, Guohui; Zhang, Junfeng; Xu, Xiaohong

    2015-09-15

    Two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) phase hybrid system composed by 2H and 1T phase is a natural metal/semiconductor heterostructures and promised a wide range of potential applications. Here, we report the first principle investigations on the structural, mechanical and electronic properties of hybrid system with armchair (AC) and zigzag (ZZ) interfaces. The ZZ type 1T/2H interface are more energy favorable than AC type interface with 3.39 eV/nm. Similar with that of bulked 1T MoS{sub 2}, the intrinsic strengths of the heterostructures are lower than that of the bulk 2H, especially for that with ZZ interface. Analysis of density of states shows that the electronic properties gradually transmitted from the metallic 1T phase to the semiconducting 2H phase for the structural abrupt interface. The present theoretical results constitute a useful picture for the 2D electronic devices using current MoS{sub 2} 1T/2H heterostructures and provide vital insights into the other 2D hybrid materials.

  8. Electrons, Electronic Publishing, and Electronic Display.

    ERIC Educational Resources Information Center

    Brownrigg, Edwin B.; Lynch, Clifford A.

    1985-01-01

    Provides a perspective on electronic publishing by distinguishing between "Newtonian" publishing and "quantum-mechanical" publishing. Highlights include media and publishing, works delivered through electronic media, electronic publishing and the printed word, management of intellectual property, and recent copyright-law issues and their…

  9. Convoy electrons

    SciTech Connect

    Burgdoerfer, J. . Dept. of Physics and Astronomy Oak Ridge National Lab., TN )

    1990-01-01

    Recent developments in the theory of the production and of the transport of convoy electrons through solids are reviewed. Similarities and differences to cusp electron emission in binary ion-atom collisions and to transport of free'' electrons through solids are highlighted. We also discuss recent observations of convoy electron emission in ion-surface collisions at small glancing angles. 36 refs., 13 figs.

  10. Au-gated SrTiO{sub 3} field-effect transistors with large electron concentration and current modulation

    SciTech Connect

    Verma, Amit Jena, Debdeep; Raghavan, Santosh; Stemmer, Susanne

    2014-09-15

    We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO{sub 3} thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO{sub 3}. As a result of the large dielectric constant of SrTiO{sub 3} and the large Schottky barrier height of Au, the Au-gated MESFETs are able to modulate ∼1.6 × 10{sup 14 }cm{sup −2} electron density, the highest modulation yet achieved using metal gates in any material system. These MESFETs modulate current densities up to ∼68 mA/mm, ∼20× times larger than the best demonstrated SrTiO{sub 3} MESFETs. We also discuss the roles of the interfacial layer, and the field-dependent dielectric constant of SrTiO{sub 3} in increasing the pinch off voltage of the MESFET.

  11. Optical Dark-Field and Electron Energy Loss Imaging and Spectroscopy of Symmetry-Forbidden Modes in Loaded Nanogap Antennas.

    PubMed

    Brintlinger, Todd; Herzing, Andrew A; Long, James P; Vurgaftman, Igor; Stroud, Rhonda; Simpkins, B S

    2015-06-23

    We have produced large numbers of hybrid metal-semiconductor nanogap antennas using a scalable electrochemical approach and systematically characterized the spectral and spatial character of their plasmonic modes with optical dark-field scattering, electron energy loss spectroscopy with principal component analysis, and full wave simulations. The coordination of these techniques reveal that these nanostructures support degenerate transverse modes which split due to substrate interactions, a longitudinal mode which scales with antenna length, and a symmetry-forbidden gap-localized transverse mode. This gap-localized transverse mode arises from mode splitting of transverse resonances supported on both antenna arms and is confined to the gap load enabling (i) delivery of substantial energy to the gap material and (ii) the possibility of tuning the antenna resonance via active modulation of the gap material's optical properties. The resonant position of this symmetry-forbidden mode is sensitive to gap size, dielectric strength of the gap material, and is highly suppressed in air-gapped structures which may explain its absence from the literature to date. Understanding the complex modal structure supported on hybrid nanosystems is necessary to enable the multifunctional components many seek. PMID:25961937

  12. Electron Microscopy.

    ERIC Educational Resources Information Center

    Beer, Michael

    1980-01-01

    Reviews technical aspects of structure determination in biological electron microscopy (EM). Discusses low dose EM, low temperature microscopy, electron energy loss spectra, determination of mass or molecular weight, and EM of labeled systems. Cites 34 references. (CS)

  13. Electronics Curriculum.

    ERIC Educational Resources Information Center

    Prickett, Charlotte

    This document presents results of research conducted by industry representatives regarding tasks performed by electronic technicians and line manufacturing electro-mechanical technicians in Arizona electronics industries. Based on this research, a competency-based curriculum was developed for training entry-level electronics technicians. Twelve…

  14. Electronic Mail.

    ERIC Educational Resources Information Center

    Pollard, Jim; Holznagel, Don

    1984-01-01

    Decision makers must address the issues of (1) just what are electronic communications? (2) how will they help me teach, administer, or survive? and (3) what will it cost in time and money? Electronic mail allows the sending of letters, memos, and messages to anyone who uses the same electronic mail system, and provides most of the options that…

  15. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    SciTech Connect

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei

    2015-09-28

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  16. Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress

    NASA Astrophysics Data System (ADS)

    Zeng, Chang; Liao, XueYang; Li, RuGuan; Wang, YuanSheng; Chen, Yiqiang; Su, Wei; Liu, Yuan; Wang, Li Wei; Lai, Ping; Huang, Yun; En, YunFei

    2015-09-01

    In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress.

  17. How Spirals and Gaps Driven by Companions in Protoplanetary Disks Appear in Scattered Light at Arbitrary Viewing Angles

    NASA Astrophysics Data System (ADS)

    Dong, Ruobing; Fung, Jeffrey; Chiang, Eugene

    2016-07-01

    Direct imaging observations of protoplanetary disks at near-infrared (NIR) wavelengths have revealed structures of potentially planetary origin. Investigations of observational signatures from planet-induced features have so far focused on disks viewed face-on. Combining 3D hydrodynamics and radiative transfer simulations, we study how the appearance of the spiral arms and the gap produced in a disk by a companion varies with inclination and position angle in NIR scattered light. We compare the cases of a 3M J and a 0.1M ⊙ companion, and make predictions suitable for testing with Gemini/GPI, Very Large Telescope/NACO/SPHERE, and Subaru/HiCIAO/SCExAO. We find that the two trailing arms produced by an external perturber can have a variety of morphologies in inclined systems—they may appear as one trailing arm; two trailing arms on the same side of the disk; or two arms winding in opposite directions. The disk ring outside a planetary gap may also mimic spiral arms when viewed at high inclinations. We suggest potential explanations for the features observed in HH 30, HD 141569 A, AK Sco, HD 100546, and AB Aur. We emphasize that inclined views of companion-induced features cannot be converted into face-on views using simple and commonly practiced image deprojections.

  18. Electronic Photography

    NASA Technical Reports Server (NTRS)

    Payne, Meredith Lindsay

    1995-01-01

    The main objective was to assist in the production of electronic images in the Electronic Photography Lab (EPL). The EPL is a new facility serving the electronic photographic needs of the Langley community. The purpose of the Electronic Photography lab is to provide Langley with access to digital imaging technology. Although the EPL has been in operation for less than one year, almost 1,000 images have been produced. The decision to establish the lab was made after careful determination of the centers needs for electronic photography. The LaRC community requires electronic photography for the production of electronic printing, Web sites, desktop publications, and its increased enhancement capabilities. In addition to general use, other considerations went into the planning of the EPL. For example, electronic photography is much less of a burden on the environment compared to conventional photography. Also, the possibilities of an on-line database and retrieval system could make locating past work more efficient. Finally, information in an electronic image is quantified, making measurements and calculations easier for the researcher.

  19. Microfluidic electronics.

    PubMed

    Cheng, Shi; Wu, Zhigang

    2012-08-21

    Microfluidics, a field that has been well-established for several decades, has seen extensive applications in the areas of biology, chemistry, and medicine. However, it might be very hard to imagine how such soft microfluidic devices would be used in other areas, such as electronics, in which stiff, solid metals, insulators, and semiconductors have previously dominated. Very recently, things have radically changed. Taking advantage of native properties of microfluidics, advances in microfluidics-based electronics have shown great potential in numerous new appealing applications, e.g. bio-inspired devices, body-worn healthcare and medical sensing systems, and ergonomic units, in which conventional rigid, bulky electronics are facing insurmountable obstacles to fulfil the demand on comfortable user experience. Not only would the birth of microfluidic electronics contribute to both the microfluidics and electronics fields, but it may also shape the future of our daily life. Nevertheless, microfluidic electronics are still at a very early stage, and significant efforts in research and development are needed to advance this emerging field. The intention of this article is to review recent research outcomes in the field of microfluidic electronics, and address current technical challenges and issues. The outlook of future development in microfluidic electronic devices and systems, as well as new fabrication techniques, is also discussed. Moreover, the authors would like to inspire both the microfluidics and electronics communities to further exploit this newly-established field. PMID:22711057

  20. Paper electronics.

    PubMed

    Tobjörk, Daniel; Österbacka, Ronald

    2011-05-01

    Paper is ubiquitous in everyday life and a truly low-cost substrate. The use of paper substrates could be extended even further, if electronic applications would be applied next to or below the printed graphics. However, applying electronics on paper is challenging. The paper surface is not only very rough compared to plastics, but is also porous. While this is detrimental for most electronic devices manufactured directly onto paper substrates, there are also approaches that are compatible with the rough and absorptive paper surface. In this review, recent advances and possibilities of these approaches are evaluated and the limitations of paper electronics are discussed. PMID:21433116

  1. Electron bifurcation.

    PubMed

    Peters, John W; Miller, Anne-Frances; Jones, Anne K; King, Paul W; Adams, Michael Ww

    2016-04-01

    Electron bifurcation is the recently recognized third mechanism of biological energy conservation. It simultaneously couples exergonic and endergonic oxidation-reduction reactions to circumvent thermodynamic barriers and minimize free energy loss. Little is known about the details of how electron bifurcating enzymes function, but specifics are beginning to emerge for several bifurcating enzymes. To date, those characterized contain a collection of redox cofactors including flavins and iron-sulfur clusters. Here we discuss the current understanding of bifurcating enzymes and the mechanistic features required to reversibly partition multiple electrons from a single redox site into exergonic and endergonic electron transfer paths. PMID:27016613

  2. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.

    PubMed

    Glaser, Markus; Kitzler, Andreas; Johannes, Andreas; Prucnal, Slawomir; Potts, Heidi; Conesa-Boj, Sonia; Filipovic, Lidija; Kosina, Hans; Skorupa, Wolfgang; Bertagnolli, Emmerich; Ronning, Carsten; Fontcuberta I Morral, Anna; Lugstein, Alois

    2016-06-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  3. Growth of metal-semiconductor core-multishell nanorods with optimized field confinement and nonlinear enhancement.

    PubMed

    Nan, Fan; Xie, Fang-Ming; Liang, Shan; Ma, Liang; Yang, Da-Jie; Liu, Xiao-Li; Wang, Jia-Hong; Cheng, Zi-Qiang; Yu, Xue-Feng; Zhou, Li; Wang, Qu-Quan; Zeng, Jie

    2016-06-01

    This paper describes a facile method for the synthesis of Au/AuAg/Ag2S/PbS core-multishell nanorods with double trapping layers. The synthesis, in sequence, involved deposition of Ag shells onto the surfaces of Au nanorod seeds, formation of AuAg shells by a galvanic replacement reaction, and overgrowth of the Ag2S shells and PbS shells. The resulting core-multishell nanorod possesses an air gap between the Au core and the AuAg shell. Together with the Ag2S shell, the air gap can efficiently trap light, causing strong field confinement and nonlinear enhancement. The as-prepared Au/AuAg/Ag2S/PbS core-multishell nanorods display distinct localized surface plasmon resonance and nonlinear optical properties, demonstrating an effective pathway for maneuvering the optical properties of nanocavities. PMID:27241031

  4. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

    PubMed Central

    2016-01-01

    In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes. PMID:27168031

  5. Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy.

    PubMed

    Chakrabarti, Sudipto; Pal, Amlan J

    2015-06-01

    We have grown gold (Au) and copper-zinc-tin-sulfide (CZTS) nanocrystals and Au-CZTS core-shell nanostructures, with gold in the core and the semiconductor in the shell layer, through a high-temperature colloidal synthetic approach. Following usual characterization, we formed ultrathin layers of these in order to characterize the nanostructures in an ultrahigh-vacuum scanning tunneling microscope. Scanning tunneling spectroscopy of individual nanostructures showed the memristor effect or resistive switching from a low- to a high-conducting state upon application of a suitable voltage pulse. The Au-CZTS core-shell nanostructures also show a multilevel memristor effect with the nanostructures undergoing two transitions in conductance at two magnitudes of voltage pulse. We have studied the reproducibility, reversibility, and retentivity of the multilevel memristors. From the normalized density of states (NDOS), we infer that the memristor effect is correlated to a decrease in the transport gap of the nanostructures. We also infer that the memristor effect occurs in the nanostructures due to an increase in the density of available states upon application of a voltage pulse. PMID:25966930

  6. Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

    SciTech Connect

    Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae; Jay Guo, L.

    2014-06-09

    We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, can have potential for diverse applications ranging from color display devices to the image sensors.

  7. Controlled metal-semiconductor sintering/alloying by one-directional reverse illumination

    DOEpatents

    Sopori, Bhushan L.

    1993-01-01

    Metal strips deposited on a top surface of a semiconductor substrate are sintered at one temperature simultaneously with alloying a metal layer on the bottom surface at a second, higher temperature. This simultaneous sintering of metal strips and alloying a metal layer on opposite surfaces of the substrate at different temperatures is accomplished by directing infrared radiation through the top surface to the interface of the bottom surface with the metal layer where the radiation is absorbed to create a primary hot zone with a temperature high enough to melt and alloy the metal layer with the bottom surface of the substrate. Secondary heat effects, including heat conducted through the substrate from the primary hot zone and heat created by infrared radiation reflected from the metal layer to the metal strips, as well as heat created from some primary absorption by the metal strips, combine to create secondary hot zones at the interfaces of the metal strips with the top surface of the substrate. These secondary hot zones are not as hot as the primary hot zone, but they are hot enough to sinter the metal strips to the substrate.

  8. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    PubMed Central

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  9. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting

    NASA Astrophysics Data System (ADS)

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-07-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis.

  10. Metal-semiconductor-oxide extreme hyperbolic metamaterials for selectable canalization wavelength

    NASA Astrophysics Data System (ADS)

    Caligiuri, Vincenzo; De Luca, Antonio

    2016-03-01

    Hyperbolic metamaterials (HMMs) are artificial structures whose extreme optical anisotropy opens the way for a broad range of applications in the visible range, from perfect lensing to attomolar biosensing. In this work we investigate the possibility of realizing an HMM structure presenting a dielectric singularity in the anisotropic permittivity response. A transition point of inverted but coexisting anisotropies is obtained at a specified wavelength due to the particular design of the multilayer meta-structure, possessing different optical properties depending on the investigation frequency. Once properly designed for only a few metal-dielectric pairs in the visible range, there is no way to shift the transition wavelength between these coexisting anisotropies and keep the same constituents. We present a simple way of overcoming this problem and set up a method to tune this transition point within almost the entire visible range without changing the constituent fundamental materials.

  11. Transmission enhancement based on strong interference in metal-semiconductor layered film for energy harvesting.

    PubMed

    Li, Qiang; Du, Kaikai; Mao, Kening; Fang, Xu; Zhao, Ding; Ye, Hui; Qiu, Min

    2016-01-01

    A fundamental strategy to enhance optical transmission through a continuous metallic film based on strong interference dominated by interface phase shift is developed. In a metallic film coated with a thin semiconductor film, both transmission and absorption are simultaneously enhanced as a result of dramatically reduced reflection. For a 50-nm-thick Ag film, experimental transmission enhancement factors of 4.5 and 9.5 are realized by exploiting Ag/Si non-symmetric and Si/Ag/Si symmetric geometries, respectively. These planar layered films for transmission enhancement feature ultrathin thickness, broadband and wide-angle operation, and reduced resistance. Considering one of their potential applications as transparent metal electrodes in solar cells, a calculated 182% enhancement in the total transmission efficiency relative to a single metallic film is expected. This strategy relies on no patterned nanostructures and thereby may power up a wide spectrum of energy-harvesting applications such as thin-film photovoltaics and surface photocatalysis. PMID:27404510

  12. Electronic Cereal.

    ERIC Educational Resources Information Center

    Frentrup, Julie R.; Phillips, Donald B.

    1996-01-01

    Describes activities that use Froot Loops breakfast cereal to help students master the concepts of valence electrons and chemical bonding and the implications of the duet and octet rules. Involves students working in groups to create electron dot structures for various compounds. (JRH)

  13. Printed Electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-Hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2015-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  14. Printed electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel A. (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2012-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  15. Printed Electronics

    NASA Technical Reports Server (NTRS)

    Crain, John M. (Inventor); Lettow, John S. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel A. (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-Hua (Inventor); Prud'Homme, Robert K. (Inventor)

    2014-01-01

    Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

  16. Communications Electronics.

    ERIC Educational Resources Information Center

    Vorderstrasse, Ron; Siebert, Leo

    This module is the third in a series of electronics publications and serves as a supplement to "General Electronics Technician." It is designed to provide students with an overview of the broad field of communications. Included are those tasks above the basic skills level that allow students to progress to a higher level of competency in the…

  17. Physical vapour deposition growth and transmission electron microscopy characterization of epitaxial thin metal films on single-crystal Si and Ge substrates

    NASA Astrophysics Data System (ADS)

    Westmacott, K. H.; Hinderberger, S.; Dahmen, U.

    2001-06-01

    Epitaxial fcc, bcc and hcp metal and alloy films were grown in high vacuum by physical vapour deposition at high rate ('flash' deposition) on the (111), (110) and (100) surfaces of Si and Ge at different deposition temperatures. The resulting epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction. Simple epitaxial relationships were found mainly for the fcc metals that form binary eutectic systems with Si and G e. Of these, Ag exhibited exceptional behaviour by forming in a single crystal cube-cube relationship on all six semiconductor surfaces. Al and Au both formed bicrystal films on (100) substrates but differed in their behaviours on (111) substrates. Silicide formers such as the fcc metals Cu and Ni, as well as all bcc and hcp metals investigated, did not adopt epitaxial relationships on most semiconductor substrates. However, epitaxial single-crystal, bicrystal and tricrystal films of several metals and alloys could be grown by using a Ag buffer layer. The factors controlling the epitaxial growth of metal films are discussed in the light of the observations and compared with the predictions of established models for epitaxial relationships. It is concluded that epitaxial films can be grown easily if the film forms a simple eutectic or monotectic system with the substrate. The epitaxial relationships of those films depend on crystallographic factors for metal-metal epitaxy and on the substrate surface structure for metal-semiconductor epitaxy.

  18. Electronic prototyping

    NASA Technical Reports Server (NTRS)

    Hopcroft, J.

    1987-01-01

    The potential benefits of automation in space are significant. The science base needed to support this automation not only will help control costs and reduce lead-time in the earth-based design and construction of space stations, but also will advance the nation's capability for computer design, simulation, testing, and debugging of sophisticated objects electronically. Progress in automation will require the ability to electronically represent, reason about, and manipulate objects. Discussed here is the development of representations, languages, editors, and model-driven simulation systems to support electronic prototyping. In particular, it identifies areas where basic research is needed before further progress can be made.

  19. Electronic neuroprocessors

    NASA Technical Reports Server (NTRS)

    Thakoor, Anil

    1991-01-01

    The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application potential for a variety of NASA, DoD, as well as commercial application problems, where conventional computing techniques are extremely time-consuming, cumbersome, or simply non-existent. An overview of the JPL electronic neural network hardware development activities and some of the striking applications of the JPL electronic neuroprocessors are presented.

  20. Electronic Prescribing

    MedlinePlus

    ... 1-877-486-2048 . I went to the pharmacy, and my prescription was ready. Electronic eRx Prescribing ... write and send your prescriptions directly to your pharmacy. This means no more prescriptions on paper and ...

  1. Electronic plants.

    PubMed

    Stavrinidou, Eleni; Gabrielsson, Roger; Gomez, Eliot; Crispin, Xavier; Nilsson, Ove; Simon, Daniel T; Berggren, Magnus

    2015-11-01

    The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants' "circuitry" has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization. PMID:26702448

  2. Electronic Cigarettes

    MedlinePlus

    ... and Figures Tobacco and Nicotine Smoked Tobacco Products Smokeless Tobacco Products Electronic Cigarettes New FDA Regulations HEALTH EFFECTS ... Secondhand Smoke Effects of Smoking on Your Health Smokeless Tobacco and Your Health Tobacco Use and Fertility Tobacco ...

  3. Electronic plants

    PubMed Central

    Stavrinidou, Eleni; Gabrielsson, Roger; Gomez, Eliot; Crispin, Xavier; Nilsson, Ove; Simon, Daniel T.; Berggren, Magnus

    2015-01-01

    The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants’ “circuitry” has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components of a circuit have been achieved using the xylem, leaves, veins, and signals of the plant as the template and integral part of the circuit elements and functions. With integrated and distributed electronics in plants, one can envisage a range of applications including precision recording and regulation of physiology, energy harvesting from photosynthesis, and alternatives to genetic modification for plant optimization. PMID:26702448

  4. Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes

    NASA Astrophysics Data System (ADS)

    Brown, T. M.; Friend, R. H.; Millard, I. S.; Lacey, D. J.; Butler, T.; Burroughes, J. H.; Cacialli, F.

    2003-05-01

    The electronic nature of metal-semiconductor contacts is a fundamental issue in the understanding of semiconductor device physics, because such contacts control charge injection, and therefore play a major role in determining the electron/hole population in the semiconductor itself. This role is particularly important for organic semiconductors as they are generally used in their pristine, undoped form. Here, we review our progress in the understanding of the energy level line-up in finished, blue-emitting, polyfluorene-based light-emitting diodes, which exploit LiF and CsF thin films in combination with Ca and Al to obtain cathodes with low injection barriers. We have used electroabsorption measurements, as they allow the noninvasive determination of the built-in potential when changing the cathode. This provides precious experimental information on the alteration of the polymer/cathode interfacial energy level line-up. The latter is found to depend strongly on the electrode work function. Thus, the Schottky-Mott model for the energy level alignment is found to be a better first-order approximation than those models where strong pinning or large interface dipoles determine the alignment (e.g., Bardeen model), except for electrodes that extensively react with the polymer, and introduce deep gap states. In addition, we show results that validate the approximation of rigid tilting of polymer energy levels with bias (for biases for which no significant injection of carriers occurs). To investigate further the consequences of the electronic line-up on device operation, we complemented the electroabsorption measurements with characterization of the emissive and transport properties of the light-emitting diodes, and confirmed that the cathodic barrier lowering in CsF/Ca/Al and LiF/Ca/Al electrodes leads to the best improvements in electron injection. We found that luminance and overall current are greatly affected by the barrier-reducing cathodes, indicating a truly

  5. Electron tube

    DOEpatents

    Suyama, Motohiro; Fukasawa, Atsuhito; Arisaka, Katsushi; Wang, Hanguo

    2011-12-20

    An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic silica, and a side tube portion having one end connected to the face plate portion and the other end connected to the stem portion and made of synthetic silica; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the photoelectric surface, and made of synthetic silica; and an electron detector arranged on the projection portion, for detecting electrons from the photoelectric surface, and made of silicon.

  6. Molecular Electronics

    NASA Astrophysics Data System (ADS)

    Petty, Michael

    The prospects of using organic materials in electronics and optoelectronics applications have attracted scientists and technologists since the 1970s. This field has become known as molecular electronics. Some successes have already been achieved, for example the liquid-crystal display. Other products such as organic light-emitting displays, chemical sensors and plastic transistors are developing fast. There is also a keen interest in exploiting technologies at the molecular scale that might eventually replace silicon devices. This chapter provides some of the background physics and chemistry to the interdisciplinary subject of molecular electronics. A review of some of the possible application areas for organic materials is presented and some speculation is provided regarding future directions.

  7. Electronic system

    DOEpatents

    Robison, G H; Dickson, J F

    1960-11-15

    An electronic system is designed for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. The system comprises separate input means electrically associated with the events under observation an electronic channel associated with each input means, including control means and indicating means; timing means adapted to apply a signal from the input means after a predetermined time to the control means to deactivate each of the channels; and means for resetting the system to its initial condition after the observation of each group of events. (D.L.C.)

  8. ELECTRONIC SYSTEM

    DOEpatents

    Robison, G.H. et al.

    1960-11-15

    An electronic system is described for indicating the occurrence of a plurality of electrically detectable events within predetermined time intervals. It is comprised of separate input means electrically associated with the events under observation: an electronic channel associated with each input means including control means and indicating means; timing means associated with each of the input means and the control means and adapted to derive a signal from the input means and apply it after a predetermined time to the control means to effect deactivation of each of the channels; and means for resetting the system to its initial condition after observation of each group of events.

  9. Electron Impedances

    SciTech Connect

    P Cameron

    2011-12-31

    It is only recently, and particularly with the quantum Hall effect and the development of nanoelectronics, that impedances on the scale of molecules, atoms and single electrons have gained attention. In what follows the possibility that characteristic impedances might be defined for the photon and the single free electron is explored is some detail, the premise being that the concepts of electrical and mechanical impedances are relevant to the elementary particle. The scale invariant quantum Hall impedance is pivotal in this exploration, as is the two body problem and Mach's principle.

  10. Electronic mail.

    PubMed Central

    Pallen, M.

    1995-01-01

    Electronic mail (email) has many advantages over other forms of communication: it is easy to use, free of charge, fast, and delivers information in a digital format. As a text only medium, email is usually less formal in style than conventional correspondence and may contain acronyms and other features, such as smileys, that are peculiar to the Internet. Email client programs that run on your own microcomputer render email powerful and easy to use. With suitable encoding methods, email can be used to send any kind of computer file, including pictures, sounds, programs, and movies. Numerous biomedical electronic mailing lists and other Internet services are accessible by email. PMID:8520343

  11. Electronic tongue.

    PubMed

    Toko, K

    1998-09-15

    A taste sensor with global selectivity is composed of several kinds of lipid/polymer membranes for transforming information of taste substances into an electric signal. The output of this electronic tongue shows different patterns for chemical substances which have different taste qualities, such as saltiness and sourness. Amino acids can be classified into several groups according to their own tastes from sensor outputs. The taste of foodstuffs such as beer, sake, coffee, mineral water, milk and vegetables can be discussed quantitatively using the electronic tongue, which provides the objective scale for the human sensory expression. PMID:9828364

  12. Electronic Homework.

    ERIC Educational Resources Information Center

    Lee, Fong-lok; Heyworth, Rex M.

    The Electronic Homework assistant system is composed of two components: the Computer Tutor and the Homework Administrator. The Computer Tutor is an intelligent tutoring system that can provide personal assistance like supplying hints, checking errors, providing remediation and prioritizing problems. The Homework Administrator is a teacher's…

  13. Optical electronics

    NASA Technical Reports Server (NTRS)

    Javan, A.

    1976-01-01

    The development of an optical diode consisting of a metal-dielectric-metal junction in which the high-speed electric conduction process occurs due to quantum mechanical electron tunneling across the dielectric barrier is briefly reviewed. Potential applications of the diode are discussed.

  14. Electronic School.

    ERIC Educational Resources Information Center

    Executive Educator, 1994

    1994-01-01

    This issue of "The Electronic School" features a special forum on computer networking. Articles specifically focus on network operating systems, cabling requirements, and network architecture. Tom Wall argues that virtual reality is not yet ready for classroom use. B.J. Novitsky profiles two high schools experimenting with CD-ROM yearbooks. Bill…

  15. Electronic Portfolios.

    ERIC Educational Resources Information Center

    Purves, Alan C.

    1996-01-01

    Outlines three forms of electronic portfolio based on a student's work, a class project about a specific topic, and a class seminar on a broad topic. Discusses logistical problems of management, access, and cross-referencing; technical problems of input, access, and copying; and theoretical issues of the lack of realia, of ownership and copyright,…

  16. Electron Swarms

    NASA Astrophysics Data System (ADS)

    Crompton, Robert W.

    1998-10-01

    Swarm experiments provide an invaluable link between gaseous electronics and atomic physics, that is, between the collective behavior of electrons in gases in electric and magnetic fields and the collision processes that determine that behavior. Early swarm experiments were made to gain an understanding of the basic physics of electrical conduction in gases and electrical breakdown. Subsequent peaks of activity have been associated with attempts to explain quantitatively electromagnetic wave propagation in the ionosphere and in high temperature air, and with applied research in such diverse areas as gas lasers, health physics, gas insulation for high voltage transmission lines, plasma processing, and particle detectors . Through improved experimental techniques and the application of numerical techniques to unravel the complex connection between the individual electron-neutral collisions and the transport coefficients that characterize the properties of the swarm, swarm experiments now contribute accurate, and sometimes unique, cross section data for low-energy electron-atom/molecule collisions. Alternatively they can provide self-consistent sets of cross sections that enable reliable forecasts of the collective behaviour to be made. In the talk I shall aim to provide an understanding of the basic principles underlying swarm experiments, and the interpratation of the results from them, through a description of their development and application up to the present day.

  17. Electronic Money.

    ERIC Educational Resources Information Center

    Schilling, Tim

    Thirty years ago a cashless society was predicted for the near future; paper currency and checks would be an antiquated symbol of the past. Consumers would embrace a new alternative for making payments: electronic money. But currency is still used for 87% of payments, mainly for "nickel and dime" purchases. And checks are the payment choice for…

  18. Basic Electronics.

    ERIC Educational Resources Information Center

    Hartman, Lonnie; Huston, Jane, Ed.

    The skills taught in these materials for a seven-unit course were those identified as necessary not only for entry-level electronic technicians but for those in other occupations as well, including appliance repair, heating and air conditioning, and auto mechanics. The seven units are on shop orientation and safety principles, introduction to…

  19. Electronic tongue

    NASA Technical Reports Server (NTRS)

    Kuhlman, Kimberly (Inventor); Buehler, Martin G. (Inventor)

    2004-01-01

    An ion selective electrode (ISE) array is described, as well as methods for producing the same. The array can contain multiple ISE which are individually electronically addressed. The addressing allows simplified preparation of the array. The array can be used for water quality monitoring, for example.

  20. Electronics Technician.

    ERIC Educational Resources Information Center

    Ohio State Univ., Columbus. Center on Education and Training for Employment.

    This document contains 27 units to consider for use in a tech prep competency profile for the occupation of electronics technician. All the units listed will not necessarily apply to every situation or tech prep consortium, nor will all the competencies within each unit be appropriate. Several units appear within each specific occupation and would…

  1. Electronic Nose

    NASA Technical Reports Server (NTRS)

    1982-01-01

    Grace Industries, Inc.'s Electronic Nose is a vapor and gas detector, deriving from NASA's electronic circuitry, capable for sensing the presence of accelerants several days after a fire. The device is powered by rechargeable battery and no special training needed to operate. If an accelerant is present, device will emit a beeping sound and trigger a flashing light; the faster the beep rate, the more volatile the accelerant. Its sensitivity can also detect minute traces of accelerants. Unit saves investigators of fire causes time and expense by providing speedy detection of physical evidence for use in court. Device is also useful for detecting hazardous fumes, locating and detecting gas leaks in refineries and on oil drilling rigs.

  2. Electronic Nose and Electronic Tongue

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Nabarun; Bandhopadhyay, Rajib

    Human beings have five senses, namely, vision, hearing, touch, smell and taste. The sensors for vision, hearing and touch have been developed for several years. The need for sensors capable of mimicking the senses of smell and taste have been felt only recently in food industry, environmental monitoring and several industrial applications. In the ever-widening horizon of frontier research in the field of electronics and advanced computing, emergence of electronic nose (E-Nose) and electronic tongue (E-Tongue) have been drawing attention of scientists and technologists for more than a decade. By intelligent integration of multitudes of technologies like chemometrics, microelectronics and advanced soft computing, human olfaction has been successfully mimicked by such new techniques called machine olfaction (Pearce et al. 2002). But the very essence of such research and development efforts has centered on development of customized electronic nose and electronic tongue solutions specific to individual applications. In fact, research trends as of date clearly points to the fact that a machine olfaction system as versatile, universal and broadband as human nose and human tongue may not be feasible in the decades to come. But application specific solutions may definitely be demonstrated and commercialized by modulation in sensor design and fine-tuning the soft computing solutions. This chapter deals with theory, developments of E-Nose and E-Tongue technology and their applications. Also a succinct account of future trends of R&D efforts in this field with an objective of establishing co-relation between machine olfaction and human perception has been included.

  3. ELECTRONIC MULTIPLIER

    DOEpatents

    Collier, D.M.; Meeks, L.A.; Palmer, J.P.

    1961-01-31

    S>An electronic multiplier is described for use in analog computers. Two electrical input signals are received; one controls the slope of a saw-tooth voltage wave while the other controls the time duration of the wave. A condenser and diode clamps are provided to sustain the crest voltage reached by the wave, and for storing that voltage to provide an output signal which is a steady d-c voltage.

  4. ELECTRON GUN

    DOEpatents

    Christofilos, N.C.; Ehlers, K.W.

    1960-04-01

    A pulsed electron gun capable of delivering pulses at voltages of the order of 1 mv and currents of the order of 100 amperes is described. The principal novelty resides in a transformer construction which is disposed in the same vacuum housing as the electron source and accelerating electrode structure of the gun to supply the accelerating potential thereto. The transformer is provided by a plurality of magnetic cores disposed in circumferentially spaced relation and having a plurality of primary windings each inductively coupled to a different one of the cores, and a helical secondary winding which is disposed coaxially of the cores and passes therethrough in circumferential succession. Additional novelty resides in the disposition of the electron source cathode filament input leads interiorly of the transformer secondary winding which is hollow, as well as in the employment of a half-wave filament supply which is synchronously operated with the transformer supply such that the transformer is pulsed during the zero current portions of the half-wave cycle.

  5. Rebalance electronics

    NASA Technical Reports Server (NTRS)

    Blalock, T. V.; Kennedy, E. J.

    1972-01-01

    Two basic types of strapdown gyroscope rebalance-electronics were analyzed and compared. These two types were a discrete-pulse ternary system and a width-modulated binary system. In the analyses, major emphasis was placed on the logic sections, the H-switches, the precision voltage reference loops, the noise performance, common-mode rejection, and loop compensation. Results of the analyses were used in identifying specific advantages and disadvantages of system details and in making accuracy and resolution comparisons. Sound engineering principles were applied in the development of both systems; however, it was concluded that each system has some disadvantages that are amenable to improvement.

  6. Electronic Router

    NASA Technical Reports Server (NTRS)

    Crusan, Jason

    2005-01-01

    Electronic Router (E-Router) is an application program for routing documents among the cognizant individuals in a government agency or other organization. E-Router supplants a prior 14 NASA Tech Briefs, May 2005 system in which paper documents were routed physically in packages by use of paper slips, packages could be lost, routing times were unacceptably long, tracking of packages was difficult, and there was a need for much photocopying. E-Router enables a user to create a digital package to be routed. Input accepted by E-Router includes the title of the package, the person(s) to whom the package is to be routed, attached files, and comments to reviewers. Electronic mail is used to notify reviewers of needed actions. The creator of the package can, at any time, see the status of the package in the routing structure. At the end of the routing process, E-Router keeps a record of the package and of approvals and/or concurrences of the reviewers. There are commercial programs that perform the general functions of E-Router, but they are more complicated. E-Router is Web-based, easy to use, and does not require the installation or use of client software.

  7. Solar-Blind Photodetectors for Harsh Electronics

    PubMed Central

    Tsai, Dung-Sheng; Lien, Wei-Cheng; Lien, Der-Hsien; Chen, Kuan-Ming; Tsai, Meng-Lin; Senesky, Debbie G.; Yu, Yueh-Chung; Pisano, Albert P.; He, Jr-Hau

    2013-01-01

    We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments. PMID:24022208

  8. Study of Ballistic Carrier Transport Using Ballistic Electron-Emission Microscopy

    NASA Astrophysics Data System (ADS)

    Lee, Edwin Yoon

    Ballistic-electron-emission microscopy (BEEM) was used to study the ballistic carrier transport of electrons and holes. Several distinct transport processes were studied to model transport processes relevant to BEEM, in which a scanning-tunneling microscope (STM) tip functions as an emitter of electrons, and the electrons tunnel across the vacuum energy barrier into a metal overlayer region on a semiconductor substrate. Some of the injected electrons from the STM tip travel into the semiconductor and are collected as the BEEM current. By doing experiments in BEEM and by doing theoretical modeling, it was found that the quantum mechanical reflection and the phonon scattering at the Schottky barrier result in a nearly energy independent reduction of the ballistic transport across the Schottky barrier of Au/Si and of Au/GaAs. Also, the conservation of parallel wave vector and of energy at the plane of the Schottky barrier energy maximum was found necessary to explain the shape of the BEEM spectrum. For the coherent metal/semiconductor (M/S) interface formed by type-B CoSi _2/Si(111) (n-type), the conservation laws were found to hold even at the metallurgical M/S interface, and this gave rise to a novel phenomenon in which the electron transport across the M/S interface was forbidden at the energy of the top of the Schottky barrier. The transport in the metal overlayer was found to be dominated by elastic scattering of the electrons, and this was modeled by the Monte Carlo method. The Monte Carlo modeling showed that the ratio of the inelastic mean free path length to the elastic mean free path length for electron in Au should be about 10 in order to explain a set of existing BEEM data showing the attenuation of the BEEM current as a function of the metal overlayer thickness. The transport across the M/S interface was found to involve scattering involving M/S interface states and states in the semiconductor band gap near the interface. Among these processes, electron

  9. EDITORIAL: Synaptic electronics Synaptic electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Gimzewski, James K.; Vuillaume, Dominique

    2013-09-01

    Conventional computers excel in logic and accurate scientific calculations but make hard work of open ended problems that human brains handle easily. Even von Neumann—the mathematician and polymath who first developed the programming architecture that forms the basis of today's computers—was already looking to the brain for future developments before his death in 1957 [1]. Neuromorphic computing uses approaches that better mimic the working of the human brain. Recent developments in nanotechnology are now providing structures with very accommodating properties for neuromorphic approaches. This special issue, with guest editors James K Gimzewski and Dominique Vuillaume, is devoted to research at the serendipitous interface between the two disciplines. 'Synaptic electronics', looks at artificial devices with connections that demonstrate behaviour similar to synapses in the nervous system allowing a new and more powerful approach to computing. Synapses and connecting neurons respond differently to incident signals depending on the history of signals previously experienced, ultimately leading to short term and long term memory behaviour. The basic characteristics of a synapse can be replicated with around ten simple transistors. However with the human brain having around 1011 neurons and 1015 synapses, artificial neurons and synapses from basic transistors are unlikely to accommodate the scalability required. The discovery of nanoscale elements that function as 'memristors' has provided a key tool for the implementation of synaptic connections [2]. Leon Chua first developed the concept of the 'The memristor—the missing circuit element' in 1971 [3]. In this special issue he presents a tutorial describing how memristor research has fed into our understanding of synaptic behaviour and how they can be applied in information processing [4]. He also describes, 'The new principle of local activity, which uncovers a minuscule life-enabling "Goldilocks zone", dubbed the

  10. Carbon Nanotube Electron Gun

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V. (Inventor); Ribaya, Bryan P. (Inventor)

    2013-01-01

    An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

  11. Carbon nanotube electron gun

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V. (Inventor); Ribaya, Bryan P. (Inventor)

    2010-01-01

    An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

  12. EDITORIAL: Synaptic electronics Synaptic electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Gimzewski, James K.; Vuillaume, Dominique

    2013-09-01

    Conventional computers excel in logic and accurate scientific calculations but make hard work of open ended problems that human brains handle easily. Even von Neumann—the mathematician and polymath who first developed the programming architecture that forms the basis of today's computers—was already looking to the brain for future developments before his death in 1957 [1]. Neuromorphic computing uses approaches that better mimic the working of the human brain. Recent developments in nanotechnology are now providing structures with very accommodating properties for neuromorphic approaches. This special issue, with guest editors James K Gimzewski and Dominique Vuillaume, is devoted to research at the serendipitous interface between the two disciplines. 'Synaptic electronics', looks at artificial devices with connections that demonstrate behaviour similar to synapses in the nervous system allowing a new and more powerful approach to computing. Synapses and connecting neurons respond differently to incident signals depending on the history of signals previously experienced, ultimately leading to short term and long term memory behaviour. The basic characteristics of a synapse can be replicated with around ten simple transistors. However with the human brain having around 1011 neurons and 1015 synapses, artificial neurons and synapses from basic transistors are unlikely to accommodate the scalability required. The discovery of nanoscale elements that function as 'memristors' has provided a key tool for the implementation of synaptic connections [2]. Leon Chua first developed the concept of the 'The memristor—the missing circuit element' in 1971 [3]. In this special issue he presents a tutorial describing how memristor research has fed into our understanding of synaptic behaviour and how they can be applied in information processing [4]. He also describes, 'The new principle of local activity, which uncovers a minuscule life-enabling "Goldilocks zone", dubbed the

  13. Electron beam generation in Tevatron electron lenses

    SciTech Connect

    Kamerdzhiev, V.; Kuznetsov, G.; Shiltsev, V.; Solyak, N.; Tiunov, M.; /Novosibirsk, IYF

    2006-08-01

    New type of high perveance electron guns with convex cathode has been developed. Three guns described in this article are built to provide transverse electron current density distributions needed for Electron Lenses for beam-beam compensation in the Tevatron collider. The current distribution can be controlled either by the gun geometry or by voltage on a special control electrode located near cathode. We present the designs of the guns and report results of beam measurements on the test bench. Because of their high current density and low transverse temperature of electrons, electron guns of this type can be used in electron cooling and beam-beam compensation devices.

  14. Optically pulsed electron accelerator

    DOEpatents

    Fraser, J.S.; Sheffield, R.L.

    1985-05-20

    An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radiofrequency-powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

  15. Optically pulsed electron accelerator

    DOEpatents

    Fraser, John S.; Sheffield, Richard L.

    1987-01-01

    An optically pulsed electron accelerator can be used as an injector for a free electron laser and comprises a pulsed light source, such as a laser, for providing discrete incident light pulses. A photoemissive electron source emits electron bursts having the same duration as the incident light pulses when impinged upon by same. The photoemissive electron source is located on an inside wall of a radio frequency powered accelerator cell which accelerates the electron burst emitted by the photoemissive electron source.

  16. Backstreaming Electrons Associated With Solar Electron Bursts

    NASA Astrophysics Data System (ADS)

    Skoug, R. M.; Steinberg, J. T.; de Koning, C. A.; Gosling, J. T.; McComas, D. J.

    2007-12-01

    Solar electron bursts are frequently observed in the ACE/SWEPAM suprathermal electron measurements at energies below 1.4 keV. A significant fraction of such events show backscattered electrons, beginning after the burst onset and traveling back towards the Sun along the magnetic field direction. Such backscattered particles imply a scattering mechanism beyond the spacecraft location. Some bursts also show backstreaming conic distributions, implying mirroring at magnetic field enhancements beyond the spacecraft. Here we present a study of these backstreaming particles during solar electron events. We examine the occurrence of backstreaming electrons and their relationship to other burst characteristics such as pitch angle width, duration, and energy range. We also investigate the time delay between burst onset and the appearance of backscattered electrons, including energy and pitch-angle dispersion. We examine the pitch angle distribution and energy dependence of backstreaming electrons, and consider possible origins of these electron distributions and their relationship to solar wind structure beyond the spacecraft.

  17. Electron cyclotron wave generation by relativistic electrons

    NASA Technical Reports Server (NTRS)

    Wong, H. K.; Goldstein, M. L.

    1994-01-01

    We show that an energetic electron distribution which has a temperature anisotropy (T perpendicular to b is greater than T parallel to b), or which is gyrating about a DC magnetic field, can generate electron cyclotron waves with frequencies below the electron cyclotron frequency. Relativistic effects are included in solving the dispersion equation and are shown to be quantitatively important. The basic idea of the mechanism is the coupling of the beam mode to slow waves. The unstable electron cyclotron waves are predominantly electromagnetic and right-hand polarized. For a low-density plasma in which the electron plasma frequency is less than the electron cyclotron frequency, the excited waves can have frequencies above or below the electron plasma frequency, depending upon the parameters of the energetic electron distribution. This instability may account for observed Z mode waves in the polar magnetosphere of the Earth and other planets.

  18. Nano-Electronics and Bio-Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Kwak, Dochan (Technical Monitor)

    2001-01-01

    Viewgraph presentation on Nano-Electronics and Bio-Electronics is discussed. Topics discussed include: NASA Ames nanotechnology program, Potential Carbon Nanotube (CNT) application, CNT synthesis,Computational Nanotechnology, and protein nanotubes.

  19. Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

    SciTech Connect

    OShea, J.J.; Brazel, E.G.; Rubin, M.E.; Bhargava, S.; Chin, M.A.; Narayanamurti, V.

    1997-07-01

    We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements at 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}

  20. Interface Electronic Circuitry for an Electronic Tongue

    NASA Technical Reports Server (NTRS)

    Keymeulen, Didier; Buehler, Martin

    2007-01-01

    Electronic circuitry has been developed to serve as an interface between an electronic tongue and digital input/output boards in a laptop computer that is used to control the tongue and process its readings. Electronic tongues can be used for a variety of purposes, including evaluating water quality, analyzing biochemicals, analyzing biofilms, and measuring electrical conductivities of soils.

  1. Electron Diffraction Using Transmission Electron Microscopy

    PubMed Central

    Bendersky, Leonid A.; Gayle, Frank W.

    2001-01-01

    Electron diffraction via the transmission electron microscope is a powerful method for characterizing the structure of materials, including perfect crystals and defect structures. The advantages of electron diffraction over other methods, e.g., x-ray or neutron, arise from the extremely short wavelength (≈2 pm), the strong atomic scattering, and the ability to examine tiny volumes of matter (≈10 nm3). The NIST Materials Science and Engineering Laboratory has a history of discovery and characterization of new structures through electron diffraction, alone or in combination with other diffraction methods. This paper provides a survey of some of this work enabled through electron microscopy.

  2. Design of electronic composites

    SciTech Connect

    Taya, M.

    1995-12-31

    This report describes the requirements of selected electronic composites with application to electronic packaging, then focuses on the modeling for the microstructure-macrobehavior relation of electronic composites. The modeling depends on the microstructure, percolative and non-percolative.

  3. Electron beam focusing system

    SciTech Connect

    Dikansky, N.; Nagaitsev, S.; Parkhomchuk, V.

    1997-09-01

    The high energy electron cooling requires a very cold electron beam. Thus, the electron beam focusing system is very important for the performance of electron cooling. A system with and without longitudinal magnetic field is presented for discussion. Interaction of electron beam with the vacuum chamber as well as with the background ions and stored antiprotons can cause the coherent electron beam instabilities. Focusing system requirements needed to suppress these instabilities are presented.

  4. Attraction by Repulsion: Pairing Electrons using Electrons

    NASA Astrophysics Data System (ADS)

    Ilani, Shahal

    One of the fundamental properties of electrons is their mutual Columbic repulsion. If electrons are placed in a solid, however, this basic property may change. A famous example is that of superconductors, where coupling to lattice vibrations makes electrons attractive and leads to the formation of bound pairs. But what if all the degrees of freedom in the solid are electronic? Is it possible to make electrons attract each other only by their repulsion to other electrons? Such an `excitonic' mechanism for attraction was proposed fifty years ago by W. A. Little, with the hope that it could lead to better and more exotic superconductivity. Yet, despite many efforts to synthesize materials that possess this unique property, to date there is still no evidence for electronic-based attraction. In this talk I will present our recent experiments that observe this unusual electronic attraction using a different, bottom-up approach. Our experiments are based on a new generation of quantum devices made from pristine carbon nanotubes, combined with precision cryogenic manipulation. Using this setup we can now assemble the fundamental building block of the excitonic attraction and demonstrate that two electrons that naturally repel each other can be made attractive using an independent electronic system as the binding glue. I will discuss the lessons learned from these experiments on what is achievable with plain electrostatics, and on the possibility to use the observed mechanism for creating exotic states of matter.

  5. Nanometer-scale properties of metal/oxide interfaces and ``end-on'' metal contacts to Si nanowires studied by ballistic electron emission microscopy (BEEM)

    NASA Astrophysics Data System (ADS)

    Pelz, Jon

    2012-02-01

    BEEM is a hot-electron (HE) technique based on scanning tunneling microscopy that can probe buried metal/semiconductor and metal/dielectric interfaces with nm-scale spatial resolution and energy resolution of a few meV. BEEM is a three-terminal technique, so the HE energy and interface electric field can be varied independently. I will discuss two studies of interest for future transistor technologies. The first concerns the band structure and alignments in a 20 nm-thick film of the high-k dielectric material Sc2O3 grown epitaxially on Si(111). Sc2O3 and related rare-earth/transition metal oxide films on Si were found to have similar band alignments and bandgap, and also ``tailing'' conduction band (CB) states extending ˜1 eV below the primary CB. We combined BEEM with internal photoemission to measure the band alignment and to study electron transport through these ``tail'' states.ootnotetextW. Cai, S. E. Stone, J. P. Pelz, L. F. Edge, and D. G. Schlom, Appl. Phys. Lett 91, 042901 (2007). Surprisingly, these tail states were found to form a robust band of extended states that supports elastic hot-electron transport even against an applied electric field. The second study concerns HE injection and transport through ``end-on'' metal contacts made to ˜100 nm diameter vertical Si nanowires (NWs) embedded in a SiO2 dielectric. At low HE flux, We observed lateral variations of the local Schottky Barrier Height (SBH) across individual end-on Au Schottky contacts, with the SBH at the contact edge found to be ˜25 meV lower than at the contact center. Finite-element electrostatic simulations suggest that this is due to a larger interface electric field at the contact edge due to positively charged Si/native-oxide interface states near the Au/NW contact, with this (equilibrium) interface state charge induced by local band bending due to the high work function Au contact. We also observed a strong suppression of the hot-electron transmission efficiency at larger HE flux

  6. Nondestructive Superresolution Imaging of Defects and Nonuniformities in Metals, Semiconductors, Dielectrics, Composites, and Plants Using Evanescent Microwaves

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, M.; Pathak, P. S.; Ponchak, G.; LeClair, S.

    1999-01-01

    We have imaged and mapped material nonuniformities and defects using microwaves generated at the end of a microstripline resonator with 0.4 micrometer lateral spatial resolution at 1 GHz. Here we experimentally examine the effect of microstripline substrate permittivity, the feedline-to-resonator coupling strength, and probe tip geometry on the spatial resolution of the probe. Carbon composites, dielectrics, semiconductors, metals, and botanical samples were scanned for defects, residual stresses, subsurface features, areas of different film thickness, and moisture content. The resulting evanescent microwave probe (EMP) images are discussed. The main objective of this work is to demonstrate the overall capabilities of the EMP imaging technique as well as to discuss various probe parameters that can be used to design EMPs for different applications.

  7. An Evanescent Microwave Probe for Super-Resolution Nondestructive Imaging of Metals, Semiconductors, Dielectrics, Composites and Biological Specimens

    NASA Technical Reports Server (NTRS)

    Pathak, P. S.; Tabib-Azar, M.; Ponchak, G.

    1998-01-01

    Using evanescent microwaves with decay lengths determined by a combination of microwave wavelength (lambda) and waveguide termination geometry, we have imaged and mapped material non-uniformities and defects with a resolving capability of lambda/3800=79 microns at 1 GHz. In our method a microstrip quarter wavelength resonator was used to generate evanescent microwaves. We imaged materials with a wide range of conductivities. Carbon composites, dielectrics (Duroid, polymers), semiconductors (3C-SiC, polysilicon, natural diamond), metals (tungsten alloys, copper, zinc, steel), high-temperature superconductors, and botanical samples were scanned for defects, residual stresses, integrity of brazed junctions, subsurface features, areas of different film thickness and moisture content. The evanescent microwave probe is a versatile tool and it can be used to perform very fast, large scale mapping of a wide range of materials. This method of characterization compares favorably with ultrasound testing, which has a resolution of about 0.1 mm and suffers from high absorption in composite materials and poor transmission across boundaries. Eddy current methods which can have a resolution on the order of 50 microns are restricted to evaluating conducting materials. Evanescent microwave imaging, with careful choice of operating frequency and probe geometry, can have a resolution of up to 1 micron. In this method we can scan hot and moving objects, sample preparation is not required, testing is non-destructive, non-invasive and non-contact, and can be done in air, in liquid or in vacuum.

  8. Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a 1T Monolayer of MoS2

    NASA Astrophysics Data System (ADS)

    Shirodkar, Sharmila N.; Waghmare, Umesh V.

    2014-04-01

    Using a combination of Landau theoretical analysis and first-principles calculations, we establish a spontaneous symmetry breaking of the metallic state of the 1T monolayer of MoS2 that opens up a band gap and leads to an unexpected yet robust ferroelectricity with ordering of electric dipoles perpendicular to its plane. Central to the properties of this thinnest known ferroelectric is a strong coupling of conducting states with valley phonons that induce an effective electric field. The current in a semiconducting 1T-MoS2 channel can, thus, be controlled independently by changing its ferroelectric dipolar structure with a gate field, opening up a possibility of a class of nanoscale dipolectronic devices. Our analysis applies equally well to MoSe2, WS2, and WSe2, giving tunability in design of such devices based on two-dimensional chalcogenides.

  9. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    NASA Astrophysics Data System (ADS)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  10. Determination of hydrogen in metals, semiconductors, and other materials by cold neutron prompt gamma-ray activation analysis

    SciTech Connect

    Paul, R.L.; Lindstrom, R.M.

    1998-12-31

    Cold neutron prompt gamma-ray activation analysis has proven useful for nondestructive measurement of trace hydrogen. The sample is irradiated in a beam of neutrons; the presence of hydrogen is confirmed by the emission of a 2223 keV gamma-ray. Detection limits for hydrogen are 3 mg/kg in quartz and 8 mg/kg in titanium. The authors have used the technique to measure hydrogen in titanium alloys, germanium, quartz, fullerenes and their derivatives, and other materials.

  11. Development of new generation of perovskite based noble metal/semiconductor photocatalysts for visible-light-driven hydrogen production

    NASA Astrophysics Data System (ADS)

    Shen, Peichuan

    In recent decades, semiconductor photocatalysis has attracted a growing attention as a possible alternative to existing methods of hydrogen production, hydrocarbon conversion and organic compound oxidation. Many types of photocatalysts have been developed and tested for photocatalytic applications. However, most of them do not have notable activity in visible light region, which limits their practical applications. Development of photocatalysts, which can be activated by visible light provides a promising way forward to utilize both UV and visible portions of solar spectrum. In this thesis, two main methods to advance visible light driven photocatalysis, such as bandgap modification through doping and co-catalyst development, are investigated. The photocatalysts studied in this thesis included CdS and SrTiO3, which were extensively investigated and characterized. Rhodium doped strontium titanate was synthesized through different preparation methods. The synthesized samples have been investigated by various characterization techniques including XRD, TEM, STEM, XPS and UV-Vis spectroscopy. The effect of preparation conditions, such as doping concentration, calcination temperature and pH have been investigated and optimized. In addition, the photocatalytic activities for hydrogen production of the samples synthesized by different preparation methods were also studied. Among the preparation methods, polymerizable complex (PC) method was found to be the most effective synthesis method for SrTiO3: Rh. The samples prepared by PC method had higher photocatalytic activity as compared to that of samples synthesized by solid state reaction method and hydrothermal method. The reasons might be attributed to more effective doping and higher surface area. The results of this work suggest that PC method can also be applied to develop other perovskite materials for photocatalytic applications. Co-catalyst development for enhancement of photocatalytic hydrogen production is also described in this dissertation. Noble metal nanoparticles have been proved to be effective co-catalysts due to their unique physical and chemical properties. Au and Pt nanoparticles with different sizes were synthesized and deposited on CdS. Sub-nanometer Au and Pt were found to be promising co-catalysts for photocatalytic hydrogen production reaction. Specifically, sub-nm Au and sub-nm Pt nanoparticles were found to enhance the photocatalytic activity in hydrogen production of CdS by 35 and 15 times respectively. Other noble metal co-catalysts, such as Ru, Pd and Rh were also deposited on CdS and their photocatalytic activities were investigated. Additionally, a novel chamber for photocatalytic reactions was developed as a part of this dissertation. The reaction chamber has several unique features allowing different reactions and measurements. The reactor was proved to be suitable for future projects in photocatalysis such as photocatalytic CO2 conversion into hydrocarbons.

  12. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  13. Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

    SciTech Connect

    Torkhov, N. A.

    2010-05-15

    Kelvin probe atomic-force microscopy of the electrostatic surface potential of gold Schottky contacts on n-GaAs showed that there is an extended transition area (halo) (tens of micrometers) around contacts in which the surface potential varies from the n-GaAs free surface potential to the gold contact surface potential. The contact potential and its distribution in the surrounding halo are controlled by the contact structure. The study of spreading currents showed that there is a high-conductance area (periphery) around the contact perimeter due to strong electric fields of the halo, which causes leakage currents. The conductivity of the main contact area is caused by 100- to 200-nm local areas with higher and lower conducting abilities. Mesa formation around contacts causes a decrease in the work function, a decrease in the halo extent and electric field strength, which is accompanied by spreading and decreasing of the peripheral area conductance. This results in disappearance of leakage currents and a decrease in the ideality index. In contrast, protection of the peripheral area by a SiO{sub 2} insulating film 0.5 {mu}m thick increases the work function, which is accompanied by the formation of potential lobes around the contact in two mutually perpendicular crystallographic directions. A stronger penetration of halo electric fields into the contact area results in an increase in the ideality index and disappearance of high-conductance peripheral area and leakage currents. The difference between the electrical properties of the periphery, gold grains, and their boundaries controls the contact switching mechanism when applying forward or reverse biases.

  14. Thermal ionization induced metal-semiconductor transition and room temperature ferromagnetism in trivalent doped ZnO codoped with lithium

    SciTech Connect

    Sivagamasundari, A.; Chandrasekar, S.; Pugaze, R.; Kannan, R.; Rajagopan, S.

    2014-03-07

    Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn{sub 0.97}Al{sub 0.03}O, 463 K for Zn{sub 0.94}Al{sub 0.03}Li{sub 0.03}O, and 503 K for Zn{sub 0.91}Al{sub 0.03}Li{sub 0.03}Mn{sub 0.03}O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

  15. Kinetic approach to barrier capacitance calculation and its application to modelling of microstructures with metal-semiconductor junctions

    NASA Astrophysics Data System (ADS)

    Kokorev, M. F.; Maleev, N. A.

    2000-03-01

    Non-uniform doping profiles are typical of modern microstructures. The conventional procedure used in computer simulation of capacitance-voltage (C -V ) characteristics and C -V profiling is a quasistatic method based on solving a nonlinear Boltzmann-Poisson equation. This method includes the free carrier thermal motion, which is very important for microstructures. At the same time, it is strictly formal and employs numerical derivatives. From a mathematical standpoint, it is an ill-posed problem. To eliminate the disadvantages of the method, we propose another theoretical approach to barrier capacitance, inspired by two sources: small-signal modelling of the capacitor response and an averaging method for calculating values used in physical kinetics. This kinetic approach permits closer physical analysis of the C -V characteristics. Furthermore, the computer simulation technique based on this approach offers a great advantage over the quasistatic method in accuracy and efficiency. The results of computer simulation demonstrate the possibility of developing a technique for forward and inverse modelling.

  16. Metal-Semiconductor Nanoparticle Hybrids Formed by Self-Organization: A Platform to Address Exciton-Plasmon Coupling.

    PubMed

    Strelow, Christian; Theuerholz, T Sverre; Schmidtke, Christian; Richter, Marten; Merkl, Jan-Philip; Kloust, Hauke; Ye, Ziliang; Weller, Horst; Heinz, Tony F; Knorr, Andreas; Lange, Holger

    2016-08-10

    Hybrid nanosystems composed of excitonic and plasmonic constituents can have different properties than the sum of of the two constituents, due to the exciton-plasmon interaction. Here, we report on a flexible model system based on colloidal nanoparticles that can form hybrid combinations by self-organization. The system allows us to tune the interparticle distance and to combine nanoparticles of different sizes and thus enables a systematic investigation of the exciton-plasmon coupling by a combination of optical spectroscopy and quantum-optical theory. We experimentally observe a strong influence of the energy difference between exciton and plasmon, as well as an interplay of nanoparticle size and distance on the coupling. We develop a full quantum theory for the luminescence dynamics and discuss the experimental results in terms of the Purcell effect. As the theory describes excitation as well as coherent and incoherent emission, we also consider possible quantum optical effects. We find a good agreement of the observed and the calculated luminescence dynamics induced by the Purcell effect. This also suggests that the self-organized hybrid system can be used as platform to address quantum optical effects. PMID:27355971

  17. Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

    NASA Technical Reports Server (NTRS)

    Salem, Ali F.; Smith, Arlynn W.; Brennan, Kevin F.

    1994-01-01

    The sizing and efficiency of an aircraft is largely determined by the performance of its high-lift system. Subsonic civil transports most often use deployable multi-element airfoils to achieve the maximum-lift requirements for landing, as well as the high lift-to-drag ratios for take-off. However, these systems produce very complex flow fields which are not fully understood by the scientific community. In order to compete in today's market place, aircraft manufacturers will have to design better high-lift systems. Therefore, a more thorough understanding of the flows associated with these systems is desired. Flight and wind-tunnel experiments have been conducted on NASA Langley's B737-100 research aircraft to obtain detailed full-scale flow measurements on a multi-element high-lift system at various flight conditions. As part of this effort, computational aerodynamic tools are being used to provide preliminary flow-field information for instrumentation development, and to provide additional insight during the data analysis and interpretation process. The purpose of this paper is to demonstrate the ability and usefulness of a three-dimensional low-order potentialflow solver, PMARC, by comparing computational results with data obtained from 1/8 scale wind-tunnel tests. Overall, correlation of experimental and computational data reveals that the panel method is able to predict reasonably well the pressures of the aircraft's multi-element wing at several spanwise stations. PMARC's versatility and usefulness is also demonstrated by accurately predicting inviscid threedimensional flow features for several intricate geometrical regions.

  18. Atomic electron correlation in nuclear electron capture

    NASA Technical Reports Server (NTRS)

    Chen, M. H.; Crasemann, B.

    1978-01-01

    The effect of electron-electron Coulomb correlation on orbital electron capture by the nucleus was treated by the multiconfigurational Hartree-Fock approach. The theoretical Be-7 L/K capture ratio was found to be 0.086, and the Ar-37 M/L ratio, 0.102. Both ratios were smaller than the independent particle predictions. Measurements exist for the Ar M/L ratio, and agreement between theory and experiment was excellent.

  19. Electronic Networking. ERIC Digest.

    ERIC Educational Resources Information Center

    Tucker, Susan

    This digest discusses several aspects of electronic networking, including network functions, implementation, and applications in education. Electronic networking is defined as including the four basic services of electronic mail (E-mail), electronic "bulletin boards," teleconferencing, and online databases, and an overview of these four functions…

  20. Introduction to Electronic Marketing.

    ERIC Educational Resources Information Center

    Dilbeck, Lettie

    These materials for a five-unit course were developed to introduce secondary and postsecondary students to the use of electronic equipment in marketing. The units cover the following topics: electronic marketing as a valid marketing approach; telemarketing; radio electronic media marketing; television electronic media marketing; and cable TV…

  1. Electron-electron interactions in artificial graphene.

    PubMed

    Räsänen, E; Rozzi, C A; Pittalis, S; Vignale, G

    2012-06-15

    Recent advances in the creation and modulation of graphenelike systems are introducing a science of "designer Dirac materials". In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points. PMID:23004308

  2. Electron-electron interactions in artificial graphene

    NASA Astrophysics Data System (ADS)

    Rasanen, Esa

    2013-03-01

    Recent advances in the creation and modulation of graphenelike systems are introducing a science of ``designer Dirac materials.'' In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points, and discuss future investigations and challenges in this field.

  3. Electron-Electron Interactions in Artificial Graphene

    NASA Astrophysics Data System (ADS)

    Räsänen, E.; Rozzi, C. A.; Pittalis, S.; Vignale, G.

    2012-06-01

    Recent advances in the creation and modulation of graphenelike systems are introducing a science of “designer Dirac materials”. In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in an adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band structure and on the emergence of Dirac points.

  4. Carbon nanotube electron sources for electron microscopes

    SciTech Connect

    De Jonge, Niels

    2009-01-01

    Electron sources were made from individual multi-walled carbon nanotubes with closed caps and thoroughly cleaned surfaces. Nanotubes from both chemical vapor deposition growth and arc discharge growth were investigated. These emitters provide a highly stable emission current up to a threshold current of a few microamperes. At too large currents several processes take place such as splitting, breaking and cap closing. The emission process is field emission for a workfunction of 5 eV. The electron optical per-formance is highly beneficial for their use as high-brightness point sources in electron microscopes and advantageous with respect to state-of-the-art electron sources. The life-time is at least two years. We have tested the source successfully in a scanning electron microscope.

  5. Electron shuttling in electron transfer dissociation

    NASA Astrophysics Data System (ADS)

    Neff, Diane; Smuczynska, Sylwia; Simons, Jack

    2009-06-01

    Ab initio electronic structure calculations have been performed on two model systems containing a disulfide linkage and one or two positively charged sites, aimed at gaining further insight into how and where electrons attach to positively charged peptides under electron capture (ECD) and electron transfer dissociation (ETD) mass spectroscopy conditions. Couplings among electronic states involving (i) an entrance-channel with the excess electron residing on a donor anion interacting with the positively charged peptide, (ii) a state in which the electron has been transferred to the SS [sigma]* orbital to cause bond cleavage, and (iii) a manifold of states in which the electron has been transferred to a ground- or excited-Rydberg orbital on a positive site. The results of this study suggest that specific excited Rydberg states play a key role in effecting electron shuttling to the SS [sigma]* orbital. The excited-Rydberg orbitals close in energy to the SS [sigma]* orbital and with sufficient radial extent to span the distance between the positive site and the SS [sigma]* orbital play the key role. Then, when the anion donor, excited-Rydberg, and SS [sigma]* orbitals achieve spatial proximity and similarity in energies, one can have what is termed here a shuttle of an electron from the donor to the SS [sigma]* orbital, which results in SS bond cleavage. For the singly and doubly charged systems studied here, it was the 3p and 3d Rydberg orbitals, respectively, that met these criteria of spatial and energetic proximity. For other peptides having different charge states, it will be other Rydberg orbitals that meet these criteria because the relative energies of the SS [sigma]* and Rydberg orbitals are governed by the (different) Coulomb stabilizations these orbitals experience. However, the evidence suggests that it is not very high-energy Rydberg states but states with 3 < n < 10 that are involved in the rate limiting steps in ECD, ETD, and ECID experiments.

  6. The origin of the integral barrier height in inhomogeneous Au/Co/GaAs67P33-Schottky contacts: A ballistic electron emission microscopy study

    NASA Astrophysics Data System (ADS)

    Olbrich, Alexander; Vancea, Johann; Kreupl, Franz; Hoffmann, Horst

    1998-01-01

    In this work we investigated the relationship between the integral Schottky barrier height (SBH) obtained from conventional current-voltage (I-V) measurement and the distribution of the local SBH measured by ballistic electron emission microscopy (BEEM) on a nanometer scale length. For this purpose, we investigated inhomogeneous Au/Co/GaAs67P33-Schottky contacts. The samples were prepared by the deposition of a discontinuous Co film on the semiconductor followed by the deposition of a continuous Au film. This provided regions with local presence of one or the other metal (Au or Co) at the metal-semiconductor interface, resulting in mesoscopically extended SBH inhomogeneities. The local SBH distribution as well as the integral SBH depended on the preparation parameter of the Co layer, i.e., on the combination of the substrate temperature (300 or 500 K) and the nominal Co thickness (0, 0.25, 0.5, 0.8, 1.0 nm). For the different preparation parameters, statistical distributions of the local SBH were measured by BEEM. Treating these SBH distributions in terms of a parallel conduction model for the electron transport across the MS interface, we calculated for each preparation parameter an integral SBH and compared it with the measured integral SBH obtained from conventional I-V measurement. The calculated and measured integral SBH's were in very good agreement, demonstrating clearly the strong influence of the low SBH regions on the electron transport across the interface and therefore on the integral SBH. The SBH values for homogeneous Au/GaAs67P33- and Co/GaAs67P33-Schottky contacts, i.e., with only one sort of metal at the interface, were determined to be ΦSBAu=1180±10 meV and ΦSBCo=1030±10 meV. As with regard to the inhomogeneous Schottky contacts the fraction of area of the MS interface covered by Co increased, the local SBH distributions as well as the integral SBH's decreased gradually from the value of ΦSBAu to ΦSBCo.

  7. A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

    NASA Technical Reports Server (NTRS)

    Sewell, James S.; Bozada, Christopher A.

    1994-01-01

    eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

  8. High energy electron cooling

    SciTech Connect

    Parkhomchuk, V.

    1997-09-01

    High energy electron cooling requires a very cold electron beam. The questions of using electron cooling with and without a magnetic field are presented for discussion at this workshop. The electron cooling method was suggested by G. Budker in the middle sixties. The original idea of the electron cooling was published in 1966. The design activities for the NAP-M project was started in November 1971 and the first run using a proton beam occurred in September 1973. The first experiment with both electron and proton beams was started in May 1974. In this experiment good result was achieved very close to theoretical prediction for a usual two component plasma heat exchange.

  9. RHIC electron lenses upgrades

    SciTech Connect

    Gu, X.; Altinbas, Z.; Bruno, D.; Binello, S.; Costanzo, M.; Drees, A.; Fischer, W.; Gassner, D. M.; Hock, J.; Hock, K.; Harvey, M.; Luo, Y.; Marusic, A.; Mi, C.; Mernick, K.; Minty, M.; Michnoff, R.; Miller, T. A.; Pikin, A. I.; Robert-Demolaize, G.; Samms, T.; Shrey, T. C.; Schoefer, V.; Tan, Y.; Than, R.; Thieberger, P.; White, S. M.

    2015-05-03

    In the Relativistic Heavy Ion Collider (RHIC) 100 GeV polarized proton run in 2015, two electron lenses were used to partially compensate for the head-on beam-beam effect for the first time. Here, we describe the design of the current electron lens, detailing the hardware modifications made after the 2014 commissioning run with heavy ions. A new electron gun with 15-mm diameter cathode is characterized. The electron beam transverse profile was measured using a YAG screen and fitted with a Gaussian distribution. During operation, the overlap of the electron and proton beams was achieved using the electron backscattering detector in conjunction with an automated orbit control program.

  10. Nonlinear electron magnetohydrodynamics physics. III. Electron energization

    SciTech Connect

    Strohmaier, K. D.; Urrutia, J. M.; Stenzel, R. L.

    2008-04-15

    Wave-particle interactions of low-frequency whistler modes with wave magnetic fields exceeding the ambient field are investigated experimentally. These highly nonlinear modes are excited with magnetic loop antennas in a large magnetized afterglow plasma. While the nonlinear wave properties are described elsewhere, the present paper focuses on the modification of the electron distribution function by the whistler waves. When the electron current flows in regions of magnetic nulls, such as in spheromak and field-reversed configurations (FRCs), strong electron energization is observed. When the whistler modes are created by electron Hall currents, such as in whistler mirrors, no significant energization occurs. The electron temperature can be raised locally by an order of magnitude. Non-Maxwellian distributions with energetic tail electrons are observed. Electron energization to > or approx. 10 eV produces visible light emission whose time and space dependence is mapped. The light source travels with the subthermal speed of whistler spheromaks. When counterpropagating spheromaks collide, the resultant FRC produces strong local heating and light which dissipates its free magnetic energy.

  11. Electron Beam Freeform Fabrication

    NASA Video Gallery

    Electron Beam Freeform Fabrication (EBF3) is a process by which NASA hopes to build metal parts in zero gravity environments. It's a layer-additive process that uses an electron beam and a solid wi...

  12. Production of solvated electrons

    NASA Technical Reports Server (NTRS)

    Thomas, J. K.

    1969-01-01

    Current research, both theoretical and experimental, relating to the production and kinetics of interactions of solvated electrons is reviewed. Particular attention is focused on solvated electrons generated by ionizing radiation in water, alcohols, and organic systems.

  13. Relativistic electron beam generator

    DOEpatents

    Mooney, L.J.; Hyatt, H.M.

    1975-11-11

    A relativistic electron beam generator for laser media excitation is described. The device employs a diode type relativistic electron beam source having a cathode shape which provides a rectangular output beam with uniform current density.

  14. Chapter 9: Electronics

    SciTech Connect

    Grupen, Claus; Shwartz, Boris A.

    2006-12-19

    Sophisticated front-end electronics are a key part of practically all modern radiation detector systems. This chapter introduces the basic principles and their implementation. Topics include signal acquisition, electronic noise, pulse shaping (analog and digital), and data readout techniques.

  15. Electron scattering from pyrimidine

    NASA Astrophysics Data System (ADS)

    Colmenares, Rafael; Fuss, Martina C.; Oller, Juan C.; Muñoz, Antonio; Blanco, Francisco; Almeida, Diogo; Limão-Vieira, Paulo; García, Gustavo

    2014-04-01

    Electron scattering from pyrimidine (C4H4N2) was investigated over a wide range of energies. Following different experimental and theoretical approaches, total, elastic and ionization cross sections as well as electron energy loss distributions were obtained.

  16. Thermal transport: Cool electronics

    NASA Astrophysics Data System (ADS)

    Cho, Jungwan; Goodson, Kenneth E.

    2015-02-01

    Although heat removal in electronics at room temperature is typically governed by a hierarchy of conduction and convection phenomena, heat dissipation in cryogenic electronics can face a fundamental limit analogous to that of black-body emission of electromagnetic radiation.

  17. Copyright of Electronic Publishing.

    ERIC Educational Resources Information Center

    Dong, Elaine; Wang, Bob

    2002-01-01

    Analyzes the importance of copyright, considers the main causes of copyright infringement in electronic publishing, discusses fair use of a copyrighted work, and suggests methods to safeguard copyrighted electronic publishing, including legislation, contracts, and technology. (Author/LRW)

  18. Catalac free electron laser

    DOEpatents

    Brau, Charles A.; Swenson, Donald A.; Boyd, Jr., Thomas J.

    1982-01-01

    A catalac free electron laser using a rf linac (catalac) which acts as a catalyst to accelerate an electron beam in an initial pass through the catalac and decelerate the electron beam during a second pass through the catalac. During the second pass through the catalac, energy is extracted from the electron beam and transformed to energy of the accelerating fields of the catalac to increase efficiency of the device. Various embodiments disclose the use of post linacs to add electron beam energy extracted by the wiggler and the use of supplementary catalacs to extract energy at various energy peaks produced by the free electron laser wiggler to further enhance efficiency of the catalac free electron laser. The catalac free electron laser can be used in conjunction with a simple resonator, a ring resonator or as an amplifier in conjunction with a master oscillator laser.

  19. Catalac free electron laser

    DOEpatents

    Brau, C.A.; Swenson, D.A.; Boyd, T.J. Jr.

    1979-12-12

    A catalac free electron laser using a rf linac (catalac) which acts as a catalyst to accelerate an electron beam in an initial pass through the catalac and decelerate the electron beam during a second pass through the catalac is described. During the second pass through the catalac, energy is extracted from the electron beam and transformed to energy of the accelerating fields of the catalac to increase efficiency of the device. Various embodiments disclose the use of post linacs to add electron beam energy extracted by the wiggler and the use of supplementary catalacs to extract energy at various energy peaks produced by the free electron laser wiggler to further enhance efficiency of the catalac free electron laser. The catalac free electron laser can be used in conjunction with a simple resonator, a ring resonator, or as an amplifier in conjunction with a master oscillator laser.

  20. Electronics materials research

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The electronic materials and is aimed at the establishment of quantitative relationships underlying crystal growth parameters, materials properties, electronic characteristics and device applications. The overall program evolves about the following main thrust areas: (1) crystal growth novel approaches to engineering of semiconductor materials; (2) investigation of materials properties and electronic characteristics on a macro and microscale; (3) surface properties and surface interactions with the bulk and ambients; (4) electronic properties controlling device applications and device performance.

  1. Electron Cyclotron Resonances in Electron Cloud Dynamics

    SciTech Connect

    Celata, Christine; Celata, C.M.; Furman, Miguel A.; Vay, J.-L.; Yu, Jennifer W.

    2008-06-25

    We report a previously unknown resonance for electron cloud dynamics. The 2D simulation code"POSINST" was used to study the electron cloud buildup at different z positions in the International Linear Collider positron damping ring wiggler. An electron equilibrium density enhancement of up to a factor of 3 was found at magnetic field values for which the bunch frequency is an integral multiple of the electron cyclotron frequency. At low magnetic fields the effects of the resonance are prominent, but when B exceeds ~;;(2 pi mec/(elb)), with lb = bunch length, effects of the resonance disappear. Thus short bunches and low B fields are required for observing the effect. The reason for the B field dependence, an explanation of the dynamics, and the results of the 2D simulations and of a single-particle tracking code used to elucidate details of the dynamics are discussed.

  2. Mathematics for Electronics.

    ERIC Educational Resources Information Center

    Clary, Joseph R.; Nery, Karen P.

    This set of 20 modules was designed for use primarily to help teach and reinforce the basic mathematics skills in electronics classes. The modules are based on electronics competencies that require mathematics skills, as determined by a panel of high school electronics and mathematics teachers. Each module consists of one or two pages of basic…

  3. Geometric Electron Models.

    ERIC Educational Resources Information Center

    Nika, G. Gerald; Parameswaran, R.

    1997-01-01

    Describes a visual approach for explaining the filling of electrons in the shells, subshells, and orbitals of the chemical elements. Enables students to apply the principles of atomic electron configuration while using manipulatives to model the building up of electron configurations as the atomic numbers of elements increase on the periodic…

  4. Syringe injectable electronics

    PubMed Central

    Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

    2015-01-01

    Seamless and minimally-invasive three-dimensional (3D) interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating syringe injection and subsequent unfolding of submicrometer-thick, centimeter-scale macroporous mesh electronics through needles with a diameter as small as 100 micrometers. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with > 90% device yield. We demonstrate several applications of syringe injectable electronics as a general approach for interpenetrating flexible electronics with 3D structures, including (i) monitoring of internal mechanical strains in polymer cavities, (ii) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (iii) in vivo multiplexed neural recording. Moreover, syringe injection enables delivery of flexible electronics through a rigid shell, delivery of large volume flexible electronics that can fill internal cavities and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics. PMID:26053995

  5. Embracing Electronic Publishing.

    ERIC Educational Resources Information Center

    Wills, Gordon

    1996-01-01

    Electronic publishing is the grandest revolution in the capture and dissemination of academic and professional knowledge since Caxton developed the printing press. This article examines electronic publishing, describes different electronic publishing scenarios (authors' cooperative, consolidator/retailer/agent oligopsony, publisher oligopoly), and…

  6. Electron interaction in matter

    NASA Technical Reports Server (NTRS)

    Dance, W. E.; Rainwater, W. J.; Rester, D. H.

    1969-01-01

    Data on the scattering of 1-MeV electrons in aluminum for the case of non-normal incidence, electron-bremsstrahlung cross-sections in thin targets, and the production of bremstrahlung by electron interaction in thick targets, are presented both in tabular and graphic form. These results may interest physicists and radiologists.

  7. ELECTRONS IN NONPOLAR LIQUIDS.

    SciTech Connect

    HOLROYD,R.A.

    2002-10-22

    Excess electrons can be introduced into liquids by absorption of high energy radiation, by photoionization, or by photoinjection from metal surfaces. The electron's chemical and physical properties can then be measured, but this requires that the electrons remain free. That is, the liquid must be sufficiently free of electron attaching impurities for these studies. The drift mobility as well as other transport properties of the electron are discussed here as well as electron reactions, free-ion yields and energy levels, Ionization processes typically produce electrons with excess kinetic energy. In liquids during thermalization, where this excess energy is lost to bath molecules, the electrons travel some distance from their geminate positive ions. In general the electrons at this point are still within the coulombic field of their geminate ions and a large fraction of the electrons recombine. However, some electrons escape recombination and the yield that escapes to become free electrons and ions is termed G{sub fi}. Reported values of G{sub fi} for molecular liquids range from 0.05 to 1.1 per 100 eV of energy absorbed. The reasons for this 20-fold range of yields are discussed here.

  8. Aspects of Electronic Archives.

    ERIC Educational Resources Information Center

    Blake, Monica

    1986-01-01

    Reviews the current status of electronic archiving, especially in Great Britain and the United States, including current use of various electronic storage media; advantages and utilizations of optical disk technology; trends toward full-text databases and increased videotex use; growing quantity of electronic information; and problems in archiving…

  9. Syringe-injectable electronics

    NASA Astrophysics Data System (ADS)

    Liu, Jia; Fu, Tian-Ming; Cheng, Zengguang; Hong, Guosong; Zhou, Tao; Jin, Lihua; Duvvuri, Madhavi; Jiang, Zhe; Kruskal, Peter; Xie, Chong; Suo, Zhigang; Fang, Ying; Lieber, Charles M.

    2015-07-01

    Seamless and minimally invasive three-dimensional interpenetration of electronics within artificial or natural structures could allow for continuous monitoring and manipulation of their properties. Flexible electronics provide a means for conforming electronics to non-planar surfaces, yet targeted delivery of flexible electronics to internal regions remains difficult. Here, we overcome this challenge by demonstrating the syringe injection (and subsequent unfolding) of sub-micrometre-thick, centimetre-scale macroporous mesh electronics through needles with a diameter as small as 100 μm. Our results show that electronic components can be injected into man-made and biological cavities, as well as dense gels and tissue, with >90% device yield. We demonstrate several applications of syringe-injectable electronics as a general approach for interpenetrating flexible electronics with three-dimensional structures, including (1) monitoring internal mechanical strains in polymer cavities, (2) tight integration and low chronic immunoreactivity with several distinct regions of the brain, and (3) in vivo multiplexed neural recording. Moreover, syringe injection enables the delivery of flexible electronics through a rigid shell, the delivery of large-volume flexible electronics that can fill internal cavities, and co-injection of electronics with other materials into host structures, opening up unique applications for flexible electronics.

  10. General Electronics Technician.

    ERIC Educational Resources Information Center

    Vorderstrasse, Ron; Huston, Jane, Ed.

    This module follows the "Basic Electronics" module as a guide for a course preparing students for job entry or further education. It includes those additional tasks required above Basic Electronics for job entry in the electronics field. The module contains eight instructional units that cover the following topics: (1) test equipment; (2)…

  11. Electron measurement in PHENIX

    SciTech Connect

    Akiba, Y.

    1995-07-15

    Electron Measurement in PHENIX detector at RHIC is discussed. The yield and S/N ratio at vector meson peaks ({phi}, {omega}, {rho}{sup o}, and J/{psi}) are evaluated. The electrons from open charm decay, and its consequence to the di-electron measurements is discussed.

  12. TEAM Electron Microscope Animation

    SciTech Connect

    2012-01-01

    The TEAM Electron Microscope, a device that enables atomic-scale imaging in 3-D, has a rotating stage that can hold and position samples inside electron microscopes with unprecedented stability, position-control accuracy, and range of motion.The TEAM Stage makes one of the world's most powerful electron microscopes even better, and enables previously impossible experiments.

  13. Management of Electronic Information.

    ERIC Educational Resources Information Center

    Breaks, Michael

    This paper discusses the management of library collections of electronic information resources within the classical theoretical framework of collection development and management. The first section provides an overview of electronic information resources, including bibliographic databases, electronic journals, journal aggregation services, and…

  14. Electron beam device

    DOEpatents

    Beckner, E.H.; Clauser, M.J.

    1975-08-12

    This patent pertains to an electron beam device in which a hollow target is symmetrically irradiated by a high energy, pulsed electron beam about its periphery and wherein the outer portion of the target has a thickness slightly greater than required to absorb the electron beam pulse energy. (auth)

  15. Electronic Education System Model.

    ERIC Educational Resources Information Center

    Cloete, Elsabe

    2001-01-01

    Discusses electronic learning efforts and problems in implementing computers in schools. Defines and describes an electronic educational system model that was developed to assist the designers of different electronic learning settings to plan and successfully implement a specific learning situation, with the focus on the individual requirements of…

  16. Electronics Engineering Technology Curriculum.

    ERIC Educational Resources Information Center

    Georgia State Univ., Atlanta. Dept. of Vocational and Career Development.

    This guide offers information and procedures necessary to train electronics engineering technicians. Discussed first are the rationale and objectives of the curriculum. The occupational field of electronics engineering technology is described. Next, a curriculum model is set forth that contains information on the standard electronics engineering…

  17. Electronic document interchange

    NASA Technical Reports Server (NTRS)

    Tuey, Dick

    1993-01-01

    Evaluation and implementation tasks for the NASA-wide electronic publishing system known as networked DOCUTECH are examined and the system configuration is graphically depicted. DOCUTECH provides the capability to print on demand electronically stored documents. Use of the electronic publishing system in several applications has generated productivity gains ranging from 33 to 88 percent at geographically dispersed NASA centers.

  18. Electron-electron collisions at TESLA

    NASA Astrophysics Data System (ADS)

    Schreiber, Siegfried; Reyzl, Ingrid

    2001-07-01

    Electron-electron collisions at the future TESLA linear collider is a promising complement to e+e- collisions. A critical issue for the physics potential of this option is the achievable luminosity. For e+e- collisions, the pinch effect enhances the luminosity, while due to the repelling forces for e-e- collisions, the luminosity is significantly reduced and is more sensitive to beam separations. This report discusses the e-e- option for TESLA and the expected luminosity.

  19. Radially uniform electron source

    NASA Technical Reports Server (NTRS)

    Mccomas, D.; Bame, S. J.

    1982-01-01

    A thermionic electron source capable of producing uniform count rates in a number of channel electron multipliers simultaneously was required for conditioning multipliers for an extended space mission. It was found that a straight tungsten filament in the center of a cylindrically symmetric geometry surrounded by an array of multipliers emits a radially asymmetric distribution of electrons that changes with time. A source was developed which successfully produces a time-independent radially uniform distribution of electrons by moving the filament out of the direct line of sight and replacing it with a centrally located electron 'cloud.'

  20. Quantifying solvated electrons' delocalization.

    PubMed

    Janesko, Benjamin G; Scalmani, Giovanni; Frisch, Michael J

    2015-07-28

    Delocalized, solvated electrons are a topic of much recent interest. We apply the electron delocalization range EDR(r;u) (J. Chem. Phys., 2014, 141, 144104) to quantify the extent to which a solvated electron at point r in a calculated wavefunction delocalizes over distance u. Calculations on electrons in one-dimensional model cavities illustrate fundamental properties of the EDR. Mean-field calculations on hydrated electrons (H2O)n(-) show that the density-matrix-based EDR reproduces existing molecular-orbital-based measures of delocalization. Correlated calculations on hydrated electrons and electrons in lithium-ammonia clusters illustrates how electron correlation tends to move surface- and cavity-bound electrons onto the cluster or cavity surface. Applications to multiple solvated electrons in lithium-ammonia clusters provide a novel perspective on the interplay of delocalization and strong correlation central to lithium-ammonia solutions' concentration-dependent insulator-to-metal transition. The results motivate continued application of the EDR to simulations of delocalized electrons. PMID:25994586

  1. Electronic energy states

    NASA Technical Reports Server (NTRS)

    1976-01-01

    One-electron wave functions are reviewed and approximate solutions of two-electron systems are given in terms of these one-electron functions. The symmetry effects associated with electron spin are reviewed and the effects of electron exchange on energy levels of the two-electron system are given. The coupling of electronic orbital and spin angular momentum is considered next and the Lande interval rule for Russell-Saunders or LS coupling is derived. The configurations possible for various multi-electron LS couplings are enumerated (examples from the first two rows of the periodic table are given), and the meaning of the spectroscopic nomenclature is discussed, particularly with respect to the degeneracies of the electron states involved. Next the nomenclature, symmetries, and degeneracies for electron states of diatomic molecules are discussed, and some examples for N2, O2, and NO are presented. The electronic partition functions and derivative thermodynamic properties are expressed in terms of these energies and degeneracies, and examples are given for some of the simple gas species encountered in the earth's atmosphere.

  2. Electron Bernstein wave electron temperature profile diagnostic

    SciTech Connect

    G. Taylor; P. Efthimion; B. Jones; T. Munsat; J. Spaleta; J. Hosea; R. Kaita; R. Majeski; J. Menard

    2000-07-20

    Electron cyclotron emission (ECE) has been employed as a standard electron temperature profile diagnostic on many tokamaks and stellarators, but most magnetically confined plasma devices cannot take advantage of standard ECE diagnostics to measure temperature. They are either overdense, operating at high density relative to the magnetic field (e.g. where the plasma frequency is much greater than the electron cyclotron frequency, as in a spherical torus) or they have insufficient density and temperature to reach the blackbody condition. Electron Bernstein waves (EBWs) are electrostatic waves that can propagate in overdense plasmas and have a high optical thickness at the electron cyclotron resonance layers, as a result of their large perpendicular wavenumber. This paper reports on measurements of EBW emission on the CDX-U spherical torus, where B{sub o} {approximately} 2 kG, {approximately}10{sup 13} cm{sup {minus}3} and T{sub e} {approx} to 10 -- 200 eV. Results are presented for electromagnetic measurements of EBW emission, mode-converted near the plasma edge. The EBW emission was absolutely calibrated and compared to the electron temperature profile measured by a multi-point Thomson scattering diagnostic. Depending on the plasma conditions, the mode converted EBW radiation temperature was found to be less than or equal to T{sub e} and the emission source was determined to be radially localized at the electron cyclotron resonance layer. A Langmuir triple probe and a 140 GHz interferometer were employed to measure changes in edge density profile in the vicinity of the upper hybrid resonance, where the mode conversion of the EBWs is expected to occur. Initial results suggest EBW emission and EBW heating are viable concepts for overdense plasmas.

  3. Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices.

    PubMed

    Li, Huaping; Liu, Hongyu; Tang, Yifan; Guo, Wenmin; Zhou, Lili; Smolinski, Nina

    2016-08-17

    Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in large scale showing the characteristics of fA off current and ION/IOFF ratio of >1 × 10(8). CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52. PMID:27487382

  4. Engineered phages for electronics.

    PubMed

    Cui, Yue

    2016-11-15

    Phages are traditionally widely studied in biology and chemistry. In recent years, engineered phages have attracted significant attentions for functionalization or construction of electronic devices, due to their specific binding, catalytic, nucleating or electronic properties. To apply the engineered phages in electronics, these are a number of interesting questions: how to engineer phages for electronics? How are the engineered phages characterized? How to assemble materials with engineered phages? How are the engineered phages micro or nanopatterned? What are the strategies to construct electronics devices with engineered phages? This review will highlight the early attempts to address these questions and explore the fundamental and practical aspects of engineered phages in electronics, including the approaches for selection or expression of specific peptides on phage coat proteins, characterization of engineered phages in electronics, assembly of electronic materials, patterning of engineered phages, and construction of electronic devices. It provides the methodologies and opens up ex-cit-ing op-por-tu-ni-ties for the development of a variety of new electronic materials and devices based on engineered phages for future applications. PMID:27322923

  5. Electronic Publishing or Electronic Information Handling?

    NASA Astrophysics Data System (ADS)

    Heck, A.

    The current dramatic evolution in information technology is bringing major modifications in the way scientists communicate. The concept of 'electronic publishing' is too restrictive and has often different, sometimes conflicting, interpretations. It is thus giving way to the broader notion of 'electronic information handling' encompassing the diverse types of information, the different media, as well as the various communication methodologies and technologies. New problems and challenges result also from this new information culture, especially on legal, ethical, and educational grounds. The procedures for validating 'published material' and for evaluating scientific activities will have to be adjusted too. 'Fluid' information is becoming a common concept. Electronic publishing cannot be conceived without link to knowledge bases nor without intelligent information retrieval tools.

  6. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, Ka-Ngo; Pincosy, Philip A.; Ehlers, Kenneth W.

    1988-01-01

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600.degree. C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for non-uniform current distribution along the filament due to the emission of electrons from the filament.

  7. Electron emitting filaments for electron discharge devices

    DOEpatents

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1983-06-10

    Electrons are copiously emitted by a device comprising a loop-shaped filament made of lanthanum hexaboride. The filament is directly heated by an electrical current produced along the filament by a power supply connected to the terminal legs of the filament. To produce a filament, a diamond saw or the like is used to cut a slice from a bar made of lanthanum hexaboride. The diamond saw is then used to cut the slice into the shape of a loop which may be generally rectangular, U-shaped, hairpin-shaped, zigzag-shaped, or generally circular. The filaments provide high electron emission at a relatively low operating temperature, such as 1600/sup 0/C. To achieve uniform heating, the filament is formed with a cross section which is tapered between the opposite ends of the filament to compensate for nonuniform current distribution along the filament due to the emission of electrons from the filament.

  8. Gridded electron reversal ionizer

    NASA Technical Reports Server (NTRS)

    Chutjian, Ara (Inventor)

    1993-01-01

    A gridded electron reversal ionizer forms a three dimensional cloud of zero or near-zero energy electrons in a cavity within a filament structure surrounding a central electrode having holes through which the sample gas, at reduced pressure, enters an elongated reversal volume. The resultant negative ion stream is applied to a mass analyzer. The reduced electron and ion space-charge limitations of this configuration enhances detection sensitivity for material to be detected by electron attachment, such as narcotic and explosive vapors. Positive ions may be generated by generating electrons having a higher energy, sufficient to ionize the target gas and pulsing the grid negative to stop the electron flow and pulsing the extraction aperture positive to draw out the positive ions.

  9. Electron-proton spectrometer

    NASA Technical Reports Server (NTRS)

    Winckler, J. R.

    1973-01-01

    An electron-proton spectrometer was designed to measure the geomagnetically trapped radiation in a geostationary orbit at 6.6 earth radii in the outer radiation belt. This instrument is to be flown on the Applications Technology Satellite-F (ATS-F). The electron-proton spectrometer consists of two permanent magnet surface barrier detector arrays and associated electronics capable of selecting and detecting electrons in three energy ranges: (1) 30-50 keV, (2) 150-200 keV, and (3) 500 keV and protons in three energy ranges. The electron-proton spectrometer has the capability of measuring the fluxes of electrons and protons in various directions with respect to the magnetic field lines running through the satellite. One magnet detector array system is implemented to scan between EME north and south through west, sampling the directional flux in 15 steps. The other magnet-detector array system is fixed looking toward EME east.

  10. Natural vacuum electronics

    NASA Technical Reports Server (NTRS)

    Leggett, Nickolaus

    1990-01-01

    The ambient natural vacuum of space is proposed as a basis for electron valves. Each valve is an electron controlling structure similiar to a vacuum tube that is operated without a vacuum sustaining envelope. The natural vacuum electron valves discussed offer a viable substitute for solid state devices. The natural vacuum valve is highly resistant to ionizing radiation, system generated electromagnetic pulse, current transients, and direct exposure to space conditions.

  11. Field emission electron source

    SciTech Connect

    Zettl, A.K.; Cohen, M.L.

    2000-05-02

    A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm{sup 2} at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

  12. The Electron Ronchigram

    SciTech Connect

    Lupini, Andrew R

    2011-01-01

    The electron Ronchigram is a form of inline hologram that offers a convenient way to directly see and measure electron optical aberrations. Any user of an aberration-corrected STEM is likely to benefit from a basic understanding of how such an image is formed and used. This chapter will review the formation of the electron Ronchigram with a particular emphasis on the effects and measurement of aberrations. This review will be largely based on our own approach and previously published work.

  13. Field emission electron source

    DOEpatents

    Zettl, Alexander Karlwalter; Cohen, Marvin Lou

    2000-01-01

    A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

  14. Ceramic Electron Multiplier

    DOE PAGESBeta

    Comby, G.

    1996-10-01

    The Ceramic Electron Multipliers (CEM) is a compact, robust, linear and fast multi-channel electron multiplier. The Multi Layer Ceramic Technique (MLCT) allows to build metallic dynodes inside a compact ceramic block. The activation of the metallic dynodes enhances their secondary electron emission (SEE). The CEM can be used in multi-channel photomultipliers, multi-channel light intensifiers, ion detection, spectroscopy, analysis of time of flight events, particle detection or Cherenkov imaging detectors. (auth)

  15. Electronic Neural Networks

    NASA Technical Reports Server (NTRS)

    Thakoor, Anil

    1990-01-01

    Viewgraphs on electronic neural networks for space station are presented. Topics covered include: electronic neural networks; electronic implementations; VLSI/thin film hybrid hardware for neurocomputing; computations with analog parallel processing; features of neuroprocessors; applications of neuroprocessors; neural network hardware for terrain trafficability determination; a dedicated processor for path planning; neural network system interface; neural network for robotic control; error backpropagation algorithm for learning; resource allocation matrix; global optimization neuroprocessor; and electrically programmable read only thin-film synaptic array.

  16. Spherical electrostatic electron spectrometer

    NASA Astrophysics Data System (ADS)

    Yang, T.-S.; Kolk, B.; Kachnowski, T.; Trooster, J.; Benczer-Koller, N.

    1982-06-01

    A high transmission, low energy spherical electrostatic electron spectrometer particularly suited to the geometry required for Mössbauer-conversion electron spectroscopy was built. A transmission of 13% at an energy resolution of 2% was obtained with an 0.5 cm diameter source of 13.6 keV electrons. Applications to the study of hyperfine interactions of surfaces and interfaces are discussed.

  17. Electronic Equipment Thermal Management

    NASA Astrophysics Data System (ADS)

    Berger, R. L.; Jenkins, L. C.

    An assessment is made of the importance of thermal management in electronic equipment design, illustrating the ways in which CAD technology may be used to improve electronic equipment thermal management programs. Attention is given to the Electronic Equipment Thermal Management portion of the aircraft system-level Thermal Management Control (TMC) program. TMC establishes the process by which the airframe's environmental control system and the electronic equipment are integrated to optimize system reliability through life cycle cost minimization, by allocating available cooling capacity to system elements on the basis of derived benefits.

  18. (Pulsed electron beam precharger)

    SciTech Connect

    Finney, W.C.; Shelton, W.N.

    1990-01-01

    This report discusses the following topics on electron beam guns: Precharger Modification; Installation of Charge vs. Radius Apparatus; High Concentration Aerosol Generation; and Data Acquisition and Analysis System.

  19. Smart Electronic Textiles.

    PubMed

    Weng, Wei; Chen, Peining; He, Sisi; Sun, Xuemei; Peng, Huisheng

    2016-05-17

    This Review describes the state-of-the-art of wearable electronics (smart textiles). The unique and promising advantages of smart electronic textiles are highlighted by comparing them with the conventional planar counterparts. The main kinds of smart electronic textiles based on different functionalities, namely the generation, storage, and utilization of electricity, are then discussed with an emphasis on the use of functional materials. The remaining challenges are summarized together with important new directions to provide some useful clues for the future development of smart electronic textiles. PMID:27005410

  20. NanoElectronics and BioElectronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak

    2001-01-01

    This viewgraph presentation reviews the use of Carbon Nanotube electronics in the bioelectronics. Included is a brief review of the carbon nanotube manufacturing, the use of carbon nanotubes in Atomic Force Microscopy (AFM), and Computational Nanotechnology, that allows designers to understand nanotube characteristics and serves as a design tool.

  1. Optical Electronics. Electronics Module 9. Instructor's Guide.

    ERIC Educational Resources Information Center

    Franken, Bill

    This module is the ninth of 10 modules in the competency-based electronics series. Introductory materials include a listing of competencies addressed in the module, a parts/equipment list, and a cross reference table of instructional materials. Five instructional units cover: fiber optic cable; optical coupler; lasers and masers; optical displays;…

  2. ELECTRONIC DATA PROCESSING EDUCATION.

    ERIC Educational Resources Information Center

    TONDOW, MURRAY

    EDUCATION HAS BEEN SLOW IN FULLY UTILIZING ELECTRONIC DATA PROCESSING EQUIPMENT (EDP). EDUCATOR CONFIDENCE IN THE EDP HAS GROWN, HOWEVER, AS A RESULT OF THE SUCCESS OF ELECTRONIC DATA PROCESSING IN SCIENCE, INDUSTRY, AND OTHER PROFESSIONS. THE DEVELOPMENT OF SOLID STATE TRANSISTORIZED COMPUTERS HAS MADE POWERFUL DESK-SIZE COMPUTERS A REALITY AND…

  3. Space electronics technology summary

    NASA Technical Reports Server (NTRS)

    1976-01-01

    An overview is given of current electronics R and D activities, potential future thrusts, and related NASA payoffs. Major increases in NASA mission return and significant concurrent reductions in mission cost appear possible through a focused, long range electronics technology program. The overview covers: guidance assessments, navigation and control, and sensing and data acquisition processing, storage, and transfer.

  4. Designing Electronic Books.

    ERIC Educational Resources Information Center

    Barker, Philip; Manji, Karim

    1991-01-01

    Discussion of the design of interactive environments focuses on three types of electronic book metaphors that use optical discs and can facilitate computer-based learning: (1) static picture books, (2) moving picture books, and (3) multimedia books. Guidelines for designing electronic books are presented, and future directions are discussed. (17…

  5. Electronic Music Appreciation.

    ERIC Educational Resources Information Center

    Peacock, Kenneth J.

    1984-01-01

    Electronic music can be used to give nonmusic majors an appreciation of musical culture. As final projects, students complete compositions and make the same musical decisions that composers make. Emphasis is on understanding of the electronic medium and on aural analysis. (CS)

  6. Electron pairing without superconductivity.

    PubMed

    Cheng, Guanglei; Tomczyk, Michelle; Lu, Shicheng; Veazey, Joshua P; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Lee, Hyungwoo; Eom, Chang-Beom; Hellberg, C Stephen; Levy, Jeremy

    2015-05-14

    Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances-paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity. PMID:25971511

  7. Electron pairing without superconductivity

    NASA Astrophysics Data System (ADS)

    Cheng, Guanglei; Tomczyk, Michelle; Lu, Shicheng; Veazey, Joshua P.; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Lee, Hyungwoo; Eom, Chang-Beom; Hellberg, C. Stephen; Levy, Jeremy

    2015-05-01

    Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances--paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity.

  8. Electron-Tunneling Magnetometer

    NASA Technical Reports Server (NTRS)

    Kaiser, William J.; Kenny, Thomas W.; Waltman, Steven B.

    1993-01-01

    Electron-tunneling magnetometer is conceptual solid-state device operating at room temperature, yet offers sensitivity comparable to state-of-art magnetometers such as flux gates, search coils, and optically pumped magnetometers, with greatly reduced volume, power consumption, electronics requirements, and manufacturing cost. Micromachined from silicon wafer, and uses tunneling displacement transducer to detect magnetic forces on cantilever-supported current loop.

  9. Flexible electronics: Sophisticated skin

    NASA Astrophysics Data System (ADS)

    Bauer, Siegfried

    2013-10-01

    Advances in materials science and layout design have enabled the realization of flexible and multifunctional electronic devices. Two demonstrations of electronic skins, which combine temperature and pressure sensing with integrated thermal actuators and organic displays, unveil the potential of these devices for robotics and clinical applications.

  10. Nanowire electron scattering spectroscopy

    NASA Technical Reports Server (NTRS)

    Hunt, Brian D. (Inventor); Bronikowski, Michael (Inventor); Wong, Eric W. (Inventor); von Allmen, Paul (Inventor); Oyafuso, Fabiano A. (Inventor)

    2009-01-01

    Methods and devices for spectroscopic identification of molecules using nanoscale wires are disclosed. According to one of the methods, nanoscale wires are provided, electrons are injected into the nanoscale wire; and inelastic electron scattering is measured via excitation of low-lying vibrational energy levels of molecules bound to the nanoscale wire.

  11. Electron tunnel sensor technology

    NASA Technical Reports Server (NTRS)

    Waltman, S. B.; Kaiser, W. J.

    1989-01-01

    The recent development of Scanning Tunneling Microscopy technology allows the application of electron tunneling to position detectors for the first time. The vacuum tunnel junction is one of the most sensitive position detection mechanisms available. It is also compact, simple, and requires little power. A prototype accelerometer based on electron tunneling, and other sensor applications of this promising new technology are described.

  12. The Michigan Electronic Library.

    ERIC Educational Resources Information Center

    Davidsen, Susanna L.

    1997-01-01

    Describes the Michigan Electronic Library (MEL), the largest evaluated and organized Web-based library of Internet resources, that was designed to provide a library of electronic information resources selected by librarians. MEL's partnership is explained, the collection is described, and future developments are considered. (LRW)

  13. Two Kinds of Electron?

    ERIC Educational Resources Information Center

    Miller, Franklin, Jr.

    2007-01-01

    In the 1930s physicists were confronted by two conflicting values for the charge of the electron as measured with great precision by two different methods. Could it be that there are two kinds of (negative) electrons, differing in charge by a fraction of a percent? The experiments were reconciled when a small systematic error in one of the…

  14. Heavy-electron materials

    SciTech Connect

    Fisk, Z.; Ott, H.R.; Smith, J.L.

    1986-01-01

    De Haas-van Alphen results demonstrated the existence of a Fermi surface at sufficiently low temperature and show that the entire Fermi surface involves heavy electrons. The phase transitions in their heavy-electron state are discussed. These are either magnetic or superconducting. 38 refs., 6 figs., 2 tabs. (WRF)

  15. Basic Electronics I.

    ERIC Educational Resources Information Center

    Robertson, L. Paul

    Designed for use in basic electronics programs, this curriculum guide is comprised of twenty-nine units of instruction in five major content areas: Orientation, Basic Principles of Electricity/Electronics, Fundamentals of Direct Current, Fundamentals of Alternating Current, and Applying for a Job. Each instructional unit includes some or all of…

  16. Direct Electron Detectors.

    PubMed

    McMullan, G; Faruqi, A R; Henderson, R

    2016-01-01

    Direct electron detectors have played a key role in the recent increase in the power of single-particle electron cryomicroscopy (cryoEM). In this chapter, we summarize the background to these recent developments, give a practical guide to their optimal use, and discuss future directions. PMID:27572721

  17. Electron pairing without superconductivity

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy

    Strontium titanate (SrTiO3) is the first and best known superconducting semiconductor. It exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to that of high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. Despite sustained interest for 50 years, direct experimental insight into the nature of electron pairing in SrTiO3 has remained elusive. Here we perform transport experiments with nanowire-based single-electron transistors at the interface between SrTiO3 and a thin layer of lanthanum aluminate, LaAlO3. Electrostatic gating reveals a series of two-electron conductance resonances--paired electron states--that bifurcate above a critical pairing field Bp of about 1-4 tesla, an order of magnitude larger than the superconducting critical magnetic field. For magnetic fields below Bp, these resonances are insensitive to the applied magnetic field; for fields in excess of Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as 900 millikelvin, well above the superconducting transition temperature (about 300 millikelvin). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by a model involving an attractive Hubbard interaction that describes real-space electron pairing as a precursor to superconductivity. Support from AFOSR, ONR, ARO, NSF, DOE and NSSEFF is gratefully acknowledged.

  18. Modular electronics packaging system

    NASA Technical Reports Server (NTRS)

    Hunter, Don J. (Inventor)

    2001-01-01

    A modular electronics packaging system includes multiple packaging slices that are mounted horizontally to a base structure. The slices interlock to provide added structural support. Each packaging slice includes a rigid and thermally conductive housing having four side walls that together form a cavity to house an electronic circuit. The chamber is enclosed on one end by an end wall, or web, that isolates the electronic circuit from a circuit in an adjacent packaging slice. The web also provides a thermal path between the electronic circuit and the base structure. Each slice also includes a mounting bracket that connects the packaging slice to the base structure. Four guide pins protrude from the slice into four corresponding receptacles in an adjacent slice. A locking element, such as a set screw, protrudes into each receptacle and interlocks with the corresponding guide pin. A conduit is formed in the slice to allow electrical connection to the electronic circuit.

  19. Electron: Cluster interactions

    SciTech Connect

    Scheidemann, A.A.; Kresin, V.V.; Knight, W.D.

    1994-02-01

    Beam depletion spectroscopy has been used to measure absolute total inelastic electron-sodium cluster collision cross sections in the energy range from E {approximately} 0.1 to E {approximately} 6 eV. The investigation focused on the closed shell clusters Na{sub 8}, Na{sub 20}, Na{sub 40}. The measured cross sections show an increase for the lowest collision energies where electron attachment is the primary scattering channel. The electron attachment cross section can be understood in terms of Langevin scattering, connecting this measurement with the polarizability of the cluster. For energies above the dissociation energy the measured electron-cluster cross section is energy independent, thus defining an electron-cluster interaction range. This interaction range increases with the cluster size.

  20. Multimedia electronic mail

    NASA Astrophysics Data System (ADS)

    Yamamoto, Brian

    1990-08-01

    Electronic mail is a facility, analogous to postal mail, in which computers are used to compose, deliver, and receive messages. Traditional electronic mail systems rely solely on text as the medium of communication. A multi-media electronic mall application, Mail, combines the media of Rich Text, voice, images, and electronic documents to facilitate interpersonal communication. With Mail, these various media can be integrated into a single message. The variety of available media and the complexity of the messages that result from their combination make it important for Mail to have a simple user interface. It was possible to develop a simple, graphically-based interface that would accommodate Mail's message complexity. The integration of these diverse media is made practical by the rich operating environment in which Mail runs. Modern advances in hardware, operating systems, libraries, and servers make possible this powerful multi-media electronic mail application.

  1. High brightness electron accelerator

    DOEpatents

    Sheffield, Richard L.; Carlsten, Bruce E.; Young, Lloyd M.

    1994-01-01

    A compact high brightness linear accelerator is provided for use, e.g., in a free electron laser. The accelerator has a first plurality of acclerating cavities having end walls with four coupling slots for accelerating electrons to high velocities in the absence of quadrupole fields. A second plurality of cavities receives the high velocity electrons for further acceleration, where each of the second cavities has end walls with two coupling slots for acceleration in the absence of dipole fields. The accelerator also includes a first cavity with an extended length to provide for phase matching the electron beam along the accelerating cavities. A solenoid is provided about the photocathode that emits the electons, where the solenoid is configured to provide a substantially uniform magnetic field over the photocathode surface to minimize emittance of the electons as the electrons enter the first cavity.

  2. Electrons and Mirror Symmetry

    ScienceCinema

    Kumar, Krishna

    2009-09-01

    The neutral weak force between an electron and a target particle, mediated by the Z boson, can be isolated by measuring the fractional change under a mirror reflection of the scattering probability of relativistic longitudinally polarized electrons off unpolarized targets. This technique yields neutral weak force measurements at a length scale of 1 femtometer, in contrast to high energy collider measurements that probe much smaller length scales. Study of the variation of the weak force over a range of length scales provides a stringent test of theory, complementing collider measurements. We describe a recent measurement of the neutral weak force between two electrons by the E158 experiment at the Stanford Linear Accelerator Center. While the weak force between an electron and positron has been extensively studied, that between two electrons had never directly been measured. We conclude by discussing prospects for even more precise measurements at future facilities.

  3. Silicon Carbide Electronic Devices

    NASA Technical Reports Server (NTRS)

    Neudeck, P. G.

    2001-01-01

    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  4. The oblique electron lens.

    NASA Technical Reports Server (NTRS)

    Johnson, C. B.; Hallam, K. L.

    1973-01-01

    An oblique electron lens is described that is especially applicable to image converters and camera tubes employing flat opaque photocathodes. The use of optical lenses, corrector plates, and/or mirrors (often employed in other electron lenses designed for use with opaque photocathodes) are eliminated. The oblique electron lens is well suited to ultraviolet and vacuum ultraviolet image converters, and to image converters employing opaque negative electron affinity photocathodes. It is also possible to use this oblique electron lens for electronography. Measurements on an experimental tube show that a limiting resolution of 50 line pairs/mm is possible, but the intrinsic lens quality is believed to approach that of a conventional electromagnetic lens having uniform and colinear electric and magnetic fields.

  5. Electrons and Mirror Symmetry

    SciTech Connect

    Kumar, Krishna

    2007-04-04

    The neutral weak force between an electron and a target particle, mediated by the Z boson, can be isolated by measuring the fractional change under a mirror reflection of the scattering probability of relativistic longitudinally polarized electrons off unpolarized targets. This technique yields neutral weak force measurements at a length scale of 1 femtometer, in contrast to high energy collider measurements that probe much smaller length scales. Study of the variation of the weak force over a range of length scales provides a stringent test of theory, complementing collider measurements. We describe a recent measurement of the neutral weak force between two electrons by the E158 experiment at the Stanford Linear Accelerator Center. While the weak force between an electron and positron has been extensively studied, that between two electrons had never directly been measured. We conclude by discussing prospects for even more precise measurements at future facilities.

  6. Harmonic electron correlation operator.

    PubMed

    Rassolov, Vitaly A

    2011-07-21

    An appealing way to model electron correlation within the single determinant wave function formalism is through the expectation value of a linear two-electron operator. For practical reasons, it is desirable for such an operator to be universal, i.e., not depend on the positions and types of nuclei in a molecule. We show how a perturbation theory applied to a hookium atom provides for a particular form of a correlation operator, hence called the harmonic correlation operator. The correlation operator approach is compared and contrasted to the traditional ways to describe electron correlation. To investigate the two-electron approximation of this operator, we apply it to many-electron hookium systems. To investigate the harmonic approximation, we apply it to the small atomic systems. Directions of future research are also discussed. PMID:21786991

  7. Developing electronic textbooks

    SciTech Connect

    Zadoks, R.I.; Ratner, J.A.

    1996-03-01

    This paper discusses a new approach to the development of engineering education materials. The ``Electronic Textbook`` represents the logical progression of the printed textbook in the Electronic Age. The concept behind this approach is simple; to place all of the information contained in a textbook in electronic form. Currently, paper texts exist on the market with electronic supplements, however, this Electronic Textbook would include supplements fully integrated in the whole text. The computer hardware and software needed to make this advance possible have existed for nearly ten years, and they have been readily available to engineering educators and students for over three years. Computer based ``tools`` in engineering textbooks as are prevalent today range from computer styled algorithms and code snippets, to fully developed software applications with graphical user interfaces on floppy disks attached to the back covers of books. The next logical step in publishing is to dispense with the paper book entirely, by distributing textbooks via electronic media such as CD-ROM. Electronic Textbooks use the full range of multi-media technologies in the learning and teaching process including video clips, computer animations and fully functional numerical engines as integral parts of the textbook material. This is very appealing since interactive media provide teaching tools that appeal to divergent learning styles. The advantages of Electronic Textbooks lead to several challenges. Special attention must be paid to the development of user interfaces; navigation is of particular importance when non- linear exploration is encouraged. These issues are being addressed at the Sandia National Laboratories by an electronic documentation development team. This team includes experts in engineering, in human factors, and in computer hardware and software development. Guidelines for the development of electronic textbooks based on the experiences of this team are provided.

  8. High temperature electronics

    NASA Astrophysics Data System (ADS)

    Seng, Gary T.

    1991-03-01

    In recent years, the aerospace propulsion and space power communities have acknowledged a growing need for electronic devices that are capable of sustained high-temperature operation. Aeropropulsion applications for high-temperature electronic devices include engine ground test instrumentation such as multiplexers, analog-to-digital converters, and telemetry systems capable of withstanding hot section engine temperatures in excess of 600 C. Uncooled operation of control and condition monitoring systems in advanced supersonic aircraft would subject the electronics to temperatures in excess of 300 C. Similarly, engine-mounted integrated electronic sensors could reach temperatures which exceed 500 C. In addition to aeronautics, there are many other areas that could benefit from the existence of high-temperature electronic devices. Space applications include power electronic devices for space platforms and satellites. Since power electronics require radiators to shed waste heat, electronic devices that operate at higher temperatures would allow a reduction in radiator size. Terrestrial applications include deep-well drilling instrumentation, high power electronics, and nuclear reactor instrumentation and control. To meet the needs of the applications mentioned previously, the high-temperature electronics (HTE) program at the Lewis Research Center is developing silicon carbide (SiC) as a high-temperature semiconductor material. Research is focused on developing the crystal growth, growth modeling, characterization, and device fabrication technologies necessary to produce a family of SiC devices. Interest in SiC has grown dramatically in recent years due to solid advances in the technology. Much research remains to be performed, but SiC appears ready to emerge as a useful semiconductor material.

  9. Simulations of Gaussian electron guns for RHIC electron lens

    SciTech Connect

    Pikin, A.

    2014-02-28

    Simulations of two versions of the electron gun for RHIC electron lens are presented. The electron guns have to generate an electron beam with Gaussian radial profile of the electron beam density. To achieve the Gaussian electron emission profile on the cathode we used a combination of the gun electrodes and shaping of the cathode surface. Dependence of electron gun performance parameters on the geometry of electrodes and the margins for electrodes positioning are presented.

  10. Electron Cooling of RHIC

    SciTech Connect

    I. Ben-Zvi; D.S. Barton; D.B. Beavis; M. Blaskiewicz; J.M. Brennan; A. Burrill; R. Calaga; P. Cameron; X.Y. Chang; R. Connolly; Yu.I. Eidelman; A.V. Fedotov; W. Fischer; D.M. Gassner; H. Hahn; M. Harrison; A. Hershcovitch; H.-C. Hseuh; A.K. Jain; P.D.J. Johnson; D. Kayran; J. Kewisch; R.F. Lambiase; V. Litvinenko; W.W. MacKay; G.J. Mahler; N. Malitsky; G.T. McIntyre; W. Meng; K.A.M. Mirabella; C. Montag; T.C.N. Nehring; T. Nicoletti; B. Oerter; G. Parzen; D. Pate; J. Rank; T. Rao; T. Roser; T. Russo; J. Scaduto; K. Smith; D. Trbojevic; G. Wang; J. Wei; N.W.W. Williams; K.-C. Wu; V. Yakimenko; A. Zaltsman; Y. Zhao; D.T. Abell; D.L. Bruhwiler; H. Bluem; A. Burger; M.D. Cole; A.J. Favale; D. Holmes; J. Rathke; T. Schultheiss; A.M.M. Todd; A.V. Burov; S. Nagaitsev; J.R. Delayen; Y.S. Derbenev; L. W. Funk; P. Kneisel; L. Merminga; H.L. Phillips; J.P. Preble; I. Koop; V.V. Parkhomchuk; Y.M. Shatunov; A.N. Skrinsky; I. Koop; V.V. Parkhomchuk; Y.M. Shatunov; A.N. Skrinsky; J.S. Sekutowicz

    2005-05-16

    We report progress on the R&D program for electron-cooling of the Relativistic Heavy Ion Collider (RHIC). This electron cooler is designed to cool 100 GeV/nucleon at storage energy using 54 MeV electrons. The electron source will be a superconducting RF photocathode gun. The accelerator will be a superconducting energy recovery linac. The frequency of the accelerator is set at 703.75 MHz. The maximum electron bunch frequency is 9.38 MHz, with bunch charge of 20 nC. The R&D program has the following components: The photoinjector and its photocathode, the superconducting linac cavity, start-to-end beam dynamics with magnetized electrons, electron cooling calculations including benchmarking experiments and development of a large superconducting solenoid. The photoinjector and linac cavity are being incorporated into an energy recovery linac aimed at demonstrating ampere class current at about 20 MeV. A Zeroth Order Design Report is in an advanced draft state, and can be found on the web at http://www.agsrhichome.bnl.gov/eCool/.

  11. Electronically cloaked nanoparticles

    NASA Astrophysics Data System (ADS)

    Shen, Wenqing

    The concept of electronic cloaking is to design objects invisible to conduction electrons. The approach of electronic cloaking has been recently suggested to design invisible nanoparticle dopants with electronic scattering cross section smaller than 1% of the physical cross section (pi a2), and therefore to enhance the carrier mobility of bulk materials. The proposed nanoparticles have core-shell structures. The dopants are incorporated inside the core, while the shell layer serves both as a spacer to separate the charge carriers from their parent atoms and as a cloaking shell to minimize the scattering cross section of the electrons from the ionized nanoparticles. Thermoelectric materials are usually highly doped to have enough carrier density. Using invisible dopants could achieve larger thermoelectric power factors by enhancing the electronic mobility. Core-shell nanoparticles show an advantage over one-layer nanoparticles, which are proposed in three-dimensional modulation doping. However designing such nanoparticles is not easy as there are too many parameters to be considered. This thesis first shows an approach to design hollow nanoparticles by applying constrains on variables. In the second part, a simple mapping approach is introduced where one can identify possible core-shell particles by comparing the dimensionless parameters of chosen materials with provided maps. In both parts of this work, several designs with realistic materials were made and proven to achieve electronic cloaking. Improvement in the thermoelectric power factor compared to the traditional impurity doping method was demonstrated in several cases.

  12. Aerogels for electronics

    SciTech Connect

    Hrubesh, L.W.

    1994-10-01

    In addition to their other exceptional properties, aerogels also exhibit unusual dielectric and electronic properties due to their nano-sized structures and high porosities. For example, aerogels have the lowest dielectric constants measured for a solid material (having values approaching 1.0); they have exceptionally high dielectric resistivities and strengths (i.e., ability to insulate very high voltages); they exhibit low dielectric loss at microwave frequencies; and some aerogels are electrically conductive and photoconductive. These properties are being exploited to provide the next generation of materials for energy storage, low power consumption, and ultra-fast electronics. We are working toward adapting these unusual materials for microelectronic applications, particularly, making thin aerogel films for dielectric substrates and for energy storage devices such as supercapacitors. Measurements are presented in this paper for the dielectric and electronic properties of aerogels, including the dielectric constant, loss factor, dielectric and electrical conductivity, volume resistivity, and dielectric strength. We also describe methods to form and characterize thin aerogel films which are being developed for numerous electronic applications. Finally, some of the electronic applications proposed for aerogels are presented. Commercialization of aerogels for electronics must await further feasibility, prototype development, and cost studies, but they are one of the key materials and are sure to have a major impact on future electronics.

  13. Coherent electron cooling

    SciTech Connect

    Litvinenko,V.

    2009-05-04

    Cooling intense high-energy hadron beams remains a major challenge in modern accelerator physics. Synchrotron radiation is still too feeble, while the efficiency of two other cooling methods, stochastic and electron, falls rapidly either at high bunch intensities (i.e. stochastic of protons) or at high energies (e-cooling). In this talk a specific scheme of a unique cooling technique, Coherent Electron Cooling, will be discussed. The idea of coherent electron cooling using electron beam instabilities was suggested by Derbenev in the early 1980s, but the scheme presented in this talk, with cooling times under an hour for 7 TeV protons in the LHC, would be possible only with present-day accelerator technology. This talk will discuss the principles and the main limitations of the Coherent Electron Cooling process. The talk will describe the main system components, based on a high-gain free electron laser driven by an energy recovery linac, and will present some numerical examples for ions and protons in RHIC and the LHC and for electron-hadron options for these colliders. BNL plans a demonstration of the idea in the near future.

  14. Dissociative Electron Attachment

    NASA Astrophysics Data System (ADS)

    Arreola, Esmeralda; Esmeralda Arreola Collaboration; Leigh Hargreaves Collaboration

    Since the pioneering work of Boudiaffa et al., it has been understood that electrons, even with energies near or below the ionization threshold, are capable of initiating strand-breaks in human DNA. This discovery raised important questions for cancer treatments, since sub-ionizing electrons are known to be the most copiously produced secondary product of radiation therapy. But even to date these factors are largely excluded from dosimetry calculations. This lack of inclusion is, at least in part, certainly due to the dearth of fundamental data describing low-energy electron interactions with nucleotide molecules that form the basis of DNA. Understanding of how such slow electrons are able to damage DNA remains incomplete, but the strongly peaked nature of Boudiaffa et al.'s data gives strong hints at resonantly driven collision processes. DNA damage is therefore most likely driven by ``dissociative electron attachment'' (DEA). DEA is a rather complicated process to model due to the coupling of electronic and nuclear degrees of freedom in the molecule. At the California State University Fullerton, we are currently commissioning a new spectrometer to study dissociation channels, reaction rates and orientation effects in DEA collisions between slow electrons and nucleotide molecules. At the meeting we will present design parameters and commissioning data for this new apparatus.

  15. Research Laboratory of Electronics

    NASA Astrophysics Data System (ADS)

    Allen, J.

    1983-01-01

    Partial Contents: Molecule Microscopy; Semiconductor Surface Studies; Atomic Resonance and Scattering; Reaction Dynamics at Semiconductor Surfaces; X-Ray Diffuse Scattering; Phase Transition in Chemisorbed Systems; Optics and Quantum Electronics; Photonics; Optical Spectroscopy of Disordered Materials and X-Ray Scattering from Surfaces; Infrared Nonlinear Optics; Quantum Optics and Electronics; Microwave and Millimeter Wave Techniques; Microwave and Quantum Magnetics; Radio Astronomy; Electromagnetic Wave Theory and Remote Sensing; Electronic Properties of Amorphous Silicon Dioxide; Photon Correlation Spectroscopy and Applications; Submicron Structures Fabrication and Research; Plasma Dynamics; Optical Propagation and Communication; Digital Signal Processing Group; Speech Communication; Linguistics; Cognitive Information Processing; Custom Integrated Circuits; Communications Biophysics; and Physiology.

  16. Electron Beam Materials Irradiators

    NASA Astrophysics Data System (ADS)

    Cleland, Marshall R.

    2012-06-01

    Radiation processing is a well established method for enhancing the properties of materials and commercial products by treating them with ionizing energy in the form of high-energy electrons, X-rays, and gamma rays. Beneficial effects include polymerizing, cross-linking, grafting and degrading plastics, sterilizing single-use medical devices, disinfecting and disinfesting fresh foods, purifying drinking water, treating wastewater and other toxic waste materials that harm the environment, and many other applications that are still being evaluated. Industrial electron accelerators of several types have been developed and are being used for these applications. More than 1800 electron accelerators are presently installed in facilities worldwide for these purposes.

  17. Single Electron Tunneling

    SciTech Connect

    Ruggiero, Steven T.

    2005-07-25

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  18. Recombination in electron coolers

    NASA Astrophysics Data System (ADS)

    Wolf, A.; Gwinner, G.; Linkemann, J.; Saghiri, A. A.; Schmitt, M.; Schwalm, D.; Grieser, M.; Beutelspacher, M.; Bartsch, T.; Brandau, C.; Hoffknecht, A.; Müller, A.; Schippers, S.; Uwira, O.; Savin, D. W.

    2000-02-01

    An introduction to electron-ion recombination processes is given and recent measurements are described as examples, focusing on low collision energies. Discussed in particular are fine-structure-mediated dielectronic recombination of fluorine-like ions, the moderate recombination enhancement by factors of typically 1.5-4 found for most ion species at relative electron-ion energies below about 10 meV, and the much larger enhancement occurring for specific highly charged ions of complex electronic structure, apparently caused by low-energy dielectronic recombination resonances. Recent experiments revealing dielectronic resonances with very large natural width are also described.

  19. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

    PubMed Central

    Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2015-01-01

    Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles. PMID:26007733

  20. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

    PubMed

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2015-01-01

    Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles. PMID:26007733

  1. Electron-impact spectroscopy

    NASA Technical Reports Server (NTRS)

    Trajmar, S.

    1990-01-01

    The methods of electron impact spectroscopy and cross section measurements are discussed and compared to optical spectroscopy. A brief summary of the status of this field and the available data is given.

  2. Strongly correlated electronic materials

    SciTech Connect

    Bedell, K.; Albers, R.; Balatsky, A.; Bishop, A.; Bonca, J.; Gubernatis, J.; Gulasci, M.; Silver, R.; Trugman, S.

    1996-04-01

    This is the final report of a 3-year project. Novel electronic materials characterized by strong electronic correlations display a number of unexpected, often extraordinary, properties. These are likely to play a major role in purpose-specific high-technology electronic materials of the future developed for electronic, magnetic, and optical applications. This project sought to develop predictive control of the novel properties by formulating, solving and applying many-body models for the underlying microscopic physics. This predictive control required the development of new analytical and numerical many-body techniques and strategies for materials of varying strengths of interactions, dimensionality and geometry. Results are compared with experiment on classes of novel materials, and the robust techniques are used to predict additional properties and motivate key additional experiments.

  3. High brightness electron sources

    SciTech Connect

    Sheffield, R.L.

    1995-07-01

    High energy physics accelerators and free electron lasers put increased demands on the electron beam sources. This paper describes the present research on attaining intense bright electron beams using photoinjectors. Recent results from the experimental programs will be given. The performance advantages and difficulties presently faced by researchers will be discussed, and the following topics will be covered. Progress has been made in photocathode materials, both in lifetime and quantum efficiency. Cesium telluride has demonstrated significantly longer lifetimes than cesium antimonide at 10{sup {minus}8} torr. However, the laser system is more difficult because cesium telluride requires quadrupled YLF instead of the doubled YLF required for cesium antimonide. The difficulty in using photoinjectors is primarily the drive laser, in particular the amplitude stability. Finally, emittance measurements of photoinjector systems can be complicated by the non-thermal nature of the electron beam. An example of the difficulty in measuring beam emittance is given.

  4. Sheet electron beam tester

    NASA Astrophysics Data System (ADS)

    Spear, Alexander Grenbeaux

    The DARPA HiFIVE project uses a pulsed electron sheet beam gun to power a traveling wave tube amplifier operating at 220 GHz. Presented is a method for characterizing the high current density 0.1 mm by 1 mm sheet electron beam. A tungsten tipped probe was scanned through the cross section of the sheet electron beam inside of a vacuum vessel. The probe was controlled with sub-micron precision using stepper motors and LabView computer control while boxcar averaging hardware sampled the pulsed beam. Matlab algorithms were used to interpret the data, calculate beam dimensions and current density, and create 2-dimensional cross section images. Full characterization of two separate HiFIVE sheet electron guns was accomplished and is also presented.

  5. Pulsed electron beam precharger

    SciTech Connect

    Finney, W.C.; Shelton, W.N.

    1989-01-01

    This is the fifth in a series of contracts and grants exploring the advanced particulate pollution control technology of electron beam precipitation. The chief goal of the current contract is to develop a laboratory scale electron beam precharger using a pulsed electric field to the proof-of-concept stage. Contract tasks leading to the achievement of this goal are generally divided up into two categories: tasks required to bring the Electron Beam Precipitator (EBP) test system up to an operational level for the contract work, and tasks concerning the actual experimental and analytical phase of the study. Not unexpectedly, the early portion of the contract duration will be devoted to the commissioning of the EBP and its many subsystems, while the latter portion will devote itself to testing the new pulsed electron beam precharger.

  6. Introduction to electronic warfare

    NASA Astrophysics Data System (ADS)

    Schleher, D. C.

    A broad overview of electronic warfare (EW) is given, emphasizing radar-related EW applications. A broad perspective of the EW field is first given, defining EW terms and giving methods of EW threat analysis and simulation. Electronic support measures and electronic countermeasures (ECM) systems are described, stressing their application to radar EW. Radars are comprehensively discussed from a system viewpoint with emphasis on their application in weapon systems and their electronic counter-countermeasures capabilities. Some general topics in C3 systems are described, stressing communication systems, C3I systems, and air defense systems. Performance calculations for EW and radar systems are covered, and modern EW signal processing is described from an airborne ECM perspective. Future trends and technology in the EW world are considered, discussing such topics as millimeter-wave EW, low-observable EW technology, GaAs monolithic circuits, VHSIC, and AI.

  7. Inelastic electron tunneling spectroscopy

    NASA Technical Reports Server (NTRS)

    Khanna, S. K.; Lambe, J.

    1983-01-01

    Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.

  8. Electronic Falling Body Simulator

    ERIC Educational Resources Information Center

    Goodman, John M.

    1975-01-01

    Describes an analog electronic simulator for the motion of an object projected horizontally in a vertical acceleration field. The device features adjustable values for the horizontal speeds and "gravity." Trajectories are displayed on an oscilloscope. (Author/CP)

  9. Electronic properties of dislocations

    NASA Astrophysics Data System (ADS)

    Reiche, M.; Kittler, M.; Uebensee, H.; Pippel, E.; Haehnel, A.; Birner, S.

    2016-04-01

    Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase in the drain current of MOSFETs if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight-binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10 % or more—causes locally dramatic changes in the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas, single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.

  10. Electronic Speckle Pattern Interferometry

    NASA Astrophysics Data System (ADS)

    Lokberg, Ole J.

    1988-01-01

    The basic principles of electronic speckle pattern interferometry (ESPI) are described, stressing its close similarity to hologram interferometry. The technique's applications for vibration and deformation testing within industrial and medical research are outlined. Future developments are discussed.

  11. FREE ELECTRON LASERS

    SciTech Connect

    Colson, W.B.; Sessler, A.M.

    1985-01-01

    The free electron laser (FEL) uses a high quality relativistic beam of electrons passing through a periodic magnetic field to amplify a copropagating optical wave (1-4). In an oscillator configuration, the light is stored between the mirrors of an open optical resonator as shown in Figure 1. In an amplifier configuration, the optical wave and an intense electron beam pass through the undulator field to achieve high gain. In either case, the electrons must overlap the optical mode for good coupling. Typically, the peak electron beam current varies from several amperes to many hundreds of amperes and the electron energy ranges from a few MeV to a few GeV. The electrons are the power source in an FEL, and provide from a megawatt to more than a gigawatt flowing through the resonator or amplifier system. The undulator resonantly couples the electrons to the transverse electrical field of the optical wave in vacuum. The basic mechanism of the coherent energy exchange is the bunching of the electrons at optical wavelengths. Since the power source is large, even small coupling can result in a powerful laser. Energy extraction of 5% of the electron beam energy has already been demonstrated. The electron beam quality is crucial in maintaining the coupling over a significant interaction distance and of central importance to all FEL systems is the magnetic undulator. The peak undulator field strength is usually several kG and can be constructed from coil windings or permanent magnets. In the top part of Figure 2, the Halbach undulator design is shown for one period. The field can be achieved, to a good approximation, using permanent magnets made out of rare earth compounds; a technique developed by K. Halbach (5), and now employed in most undulators. The undulator wavelength is in the range of a few centimeters and the undulator length extends for a few meters, so that there are several hundred periods for the interaction (6-8). The polarization of the undulator can be either

  12. PREFACE: Spin Electronics

    NASA Astrophysics Data System (ADS)

    Dieny, B.; Sousa, R.; Prejbeanu, L.

    2007-04-01

    Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

  13. Electron spectroscopy analysis

    NASA Technical Reports Server (NTRS)

    Gregory, John C.

    1992-01-01

    The Surface Science Laboratories at the University of Alabama in Huntsville (UAH) are equipped with x-ray photoelectron spectroscopy (XPS or ESCA) and Auger electron spectroscopy (AES) facilities. These techniques provide information from the uppermost atomic layers of a sample, and are thus truly surface sensitive. XPS provides both elemental and chemical state information without restriction on the type of material that can be analyzed. The sample is placed into an ultra high vacuum (UHV) chamber and irradiated with x-rays which cause the ejection of photoelectrons from the sample surface. Since x-rays do not normally cause charging problems or beam damage, XPS is applicable to a wide range of samples including metals, polymers, catalysts, and fibers. AES uses a beam of high energy electrons as a surface probe. Following electronic rearrangements within excited atoms by this probe, Auger electrons characteristic of each element present are emitted from the sample. The main advantage of electron induced AES is that the electron beam can be focused down to a small diameter and localized analysis can be carried out. On the rastering of this beam synchronously with a video display using established scanning electron microscopy techniques, physical images and chemical distribution maps of the surface can be produced. Thus very small features, such as electronic circuit elements or corrosion pits in metals, can be investigated. Facilities are available on both XPS and AES instruments for depth-profiling of materials, using a beam of argon ions to sputter away consecutive layers of material to reveal sub-surface (and even semi-bulk) analyses.

  14. Electronic engine controls

    SciTech Connect

    Hodges, S.

    1991-07-01

    This paper reports that pioneered in the mid-80s to manage and optimize engine performance under continually changing conditions, electronic controls have made a significant impact on truck maintenance. But they also served another important purpose: they curbed emissions enough to meet EPA's new heavy-truck standards set in 1985 (see sidebar). In that same year, Detroit Diesel introduced its Detroit Diesel Electronic Controls (DDEC) system, and a trend was born. Suddenly horsepower rating, torque curve, and maximum engine and road speed could be governed by electronics. Engine-mounted sensors could provide drivers with precise information about fluid and pressure levels, inside and outside temperatures, and a host of other information. The advent of electronic engine controls signaled the dawn of a revolution in trucking. For company owners who wanted greater control of their operations, electronics were wonderful news. But new controls meant new engine designs and radical changes in engine maintenance and repair. So for many members of the waste-hauling industry, electronics were far from wonderful. It's not that haulers didn't want cleaner air or trucks that were increasingly fuel efficient. It's more that they winced at the thought of retraining their mechanics - already hard to find and retain - to work on a new breed of engine. Then there were other considerations. drivers, for example, might not cotton to the fancy electronic dashboard displays. They might also rebel at having their maximum road speed present at a rate they couldn't change. Then there was the cost factor: Electronics and other provisions used to meet Clean Air Act reductions of oxides of nitrogen between 1991, 94 and 98 model years could add as much as $10,000 to $15,000 to the cost of each truck.

  15. BOK-Printed Electronics

    NASA Technical Reports Server (NTRS)

    Ghaffarian, Reza

    2013-01-01

    The use of printed electronics technologies (PETs), 2D or 3D printing approaches either by conventional electronic fabrication or by rapid graphic printing of organic or nonorganic electronic devices on various small or large rigid or flexible substrates, is projected to grow exponentially in commercial industry. This has provided an opportunity to determine whether or not PETs could be applicable for low volume and high-reliability applications. This report presents a summary of literature surveyed and provides a body of knowledge (BOK) gathered on the current status of organic and printed electronics technologies. It reviews three key industry roadmaps- on this subject-OE-A, ITRS, and iNEMI-each with a different name identification for this emerging technology. This followed by a brief review of the status of the industry on standard development for this technology, including IEEE and IPC specifications. The report concludes with key technologies and applications and provides a technology hierarchy similar to those of conventional microelectronics for electronics packaging. Understanding key technology roadmaps, parameters, and applications is important when judicially selecting and narrowing the follow-up of new and emerging applicable technologies for evaluation, as well as the low risk insertion of organic, large area, and printed electronics.

  16. Electron Pairing Without Superconductivity

    NASA Astrophysics Data System (ADS)

    Levy, Jeremy; Cheng, G.; Tomczyk, M.; Lu, S.; Veazey, J. P.; Huang, M.; Irvin, P.; Ryu, S.; Lee, H.; Eom, C.-B.; Hellberg, C. S.

    2015-03-01

    Strontium titanate (SrTiO3) exhibits an extremely low carrier density threshold for superconductivity, and possesses a phase diagram similar to high-temperature superconductors--two factors that suggest an unconventional pairing mechanism. We describe transport experiments with nanowire-based quantum dots localized at the interface between SrTiO3 and LaAlO3. Electrostatic gating of the quantum dot reveals a series of two-electron conductance resonances--paired electron states--that bifurcate above a critical magnetic field Bp 1-4 Tesla, an order of magnitude larger than the superconducting critical magnetic field. For B Bp, the resonances exhibit a linear Zeeman-like energy splitting. Electron pairing is stable at temperatures as high as T = 900 mK, far above the superconducting transition temperature (Tc 300 mK). These experiments demonstrate the existence of a robust electronic phase in which electrons pair without forming a superconducting state. Key experimental signatures are captured by an attractive-U Hubbard model that describes real-space electron pairing as a precursor to superconductivity. This work was supported by ARO MURI W911NF-08-1-0317 (J.L.), AFOSR MURI FA9550-10-1-0524 (C.-B.E., J.L.) and FA9550-12-1-0342 (C.-B.E.), and grants from the National Science Foundation DMR-1104191 (J.L.), DMR.

  17. Pulsed electron beam precharger

    SciTech Connect

    Finney, W.C.; Shelton, W.N.

    1991-01-01

    Electron beam precharging of a high resistivity aerosol was successfully performed under a range of experimental conditions during Quarter Six of the contract. The initial E-beam particle precharging experiments completed this term were designed to extend the efficiency of particle charging and collection using a fine, monodisperse aerosol at relatively large loadings in the FSU Electron Beam Precipitator wind tunnel. There are several reasons for doing this: (1) to re-establish a baseline performance criterion for comparison to other runs, (2) to test several recently upgraded or repaired subsystems, and (3) to improve upon the collection efficiency of the electron beam precipitator when testing precharging effectiveness with a very high resistivity, moderate-to-high dust concentration. In addition, these shakedown runs were used to determine a set of suitable operational parameters for the wind tunnel, the electrostatic collecting sections, and the MINACC E-beam accelerator. These parameters will normally be held constant while the precharging parameters are varied to produce an optimum particle charge. The electron beam precharging investigation performed during the period covered by Quarter Six used virtually the same experimental apparatus and procedures as in previous contract work, and these are described for review in this report. This investigation was part of an experimental effort which ran nearly continuously for nine months, encompassing work on the electrostatic collecting section, electron beam precharger, and particle charge-to-radius measuring apparatus. A summary of the work on dc electron beam precipitation is presented here.

  18. HDTV versus electronic cinema

    NASA Astrophysics Data System (ADS)

    Tinker, Michael

    1998-12-01

    We are on the brink of transforming the movie theatre with electronic cinema. Technologies are converging to make true electronic cinema, with a 'film look,' possible for the first time. In order to realize the possibilities, we must leverage current technologies in video compression, electronic projection, digital storage, and digital networks. All these technologies have only recently improved sufficiently to make their use in the electronic cinema worthwhile. Video compression, such as MPEG-2, is designed to overcome the limitations of video, primarily limited bandwidth. As a result, although HDTV offers a serious challenge to film-based cinema, it falls short in a number of areas, such as color depth. Freed from the constraints of video transmission, and using the recently improved technologies available, electronic cinema can move beyond video; Although movies will have to be compressed for some time, what is needed is a concept of 'cinema compression,' rather than video compression. Electronic cinema will open up vast new possibilities for viewing experiences at the theater, while at the same time offering up the potential for new economies in the movie industry.

  19. Multiplying Electrons With Diamond

    NASA Technical Reports Server (NTRS)

    2003-01-01

    As researchers in the Space Communications Division of NASA s Glenn Research Center in 1992, Dr. Gerald Mearini, Dr. Isay Krainsky, and Dr. James Dayton made a secondary electron emission discovery that became the foundation for Mearini s company, GENVAC AeroSpace Corporation. Even after Mearini departed Glenn, then known as Lewis Research Center, his contact with NASA remained strong as he was awarded Small Business Innovation Research (SBIR) contracts to further develop his work. Mearini s work for NASA began with the investigation of diamond as a material for the suppression of secondary electron emissions. The results of his research were the opposite of what was expected diamond proved to be an excellent emitter rather than absorber. Mearini, Krainsky, and Dayton discovered that laboratory-grown diamond films can produce up to 45 electrons from a single incident electron. Having built an electron multiplier prototype at NASA, Mearini decided to start his own company to develop diamond structures usable in electron beam devices.

  20. Free electron laser

    DOEpatents

    Villa, Francesco

    1990-01-01

    A high gain, single-pass free electron laser formed of a high brilliance electron injector source, a linear accelerator which imparts high energy to the electron beam, and an undulator capable of extremely high magnetic fields, yet with a very short period. The electron injector source is the first stage (gap) of the linear accelerator or a radial line transformer driven by fast circular switch. The linear accelerator is formed of a plurality of accelerating gaps arranged in series. These gaps are energized in sequence by releasing a single pulse of energy which propagates simultaneously along a plurality of transmission lines, each of which feeds the gaps. The transmission lines are graduated in length so that pulse power is present at each gap as the accelerated electrons pass therethrough. The transmission lines for each gap are open circuited at their ends. The undualtor has a structure similar to the accelerator, except that the transmission lines for each gap are substantially short circuited at their ends, thus converting the electric field into magnetic field. A small amount of resistance is retained in order to generate a small electric field for replenishing the electron bunch with the energy lost as it traverses through the undulator structure.

  1. Electronic Paper Turns the Page.

    ERIC Educational Resources Information Center

    Mann, Charles C.

    2001-01-01

    Documents the development of electronic paper focusing on significant events and inventors. Includes a graphic of the process of making electronic paper. Illustrates the multidisciplinary nature of the development of electronic paper. (DDR)

  2. Cooling system for electronic components

    DOEpatents

    Anderl, William James; Colgan, Evan George; Gerken, James Dorance; Marroquin, Christopher Michael; Tian, Shurong

    2016-05-17

    Embodiments of the present invention provide for non interruptive fluid cooling of an electronic enclosure. One or more electronic component packages may be removable from a circuit card having a fluid flow system. When installed, the electronic component packages are coincident to and in a thermal relationship with the fluid flow system. If a particular electronic component package becomes non-functional, it may be removed from the electronic enclosure without affecting either the fluid flow system or other neighboring electronic component packages.

  3. Cooling system for electronic components

    SciTech Connect

    Anderl, William James; Colgan, Evan George; Gerken, James Dorance; Marroquin, Christopher Michael; Tian, Shurong

    2015-12-15

    Embodiments of the present invention provide for non interruptive fluid cooling of an electronic enclosure. One or more electronic component packages may be removable from a circuit card having a fluid flow system. When installed, the electronic component packages are coincident to and in a thermal relationship with the fluid flow system. If a particular electronic component package becomes non-functional, it may be removed from the electronic enclosure without affecting either the fluid flow system or other neighboring electronic component packages.

  4. Electron microscope phase enhancement

    DOEpatents

    Jin, Jian; Glaeser, Robert M.

    2010-06-15

    A microfabricated electron phase shift element is used for modifying the phase characteristics of an electron beam passing though its center aperture, while not affecting the more divergent portion of an incident beam to selectively provide a ninety-degree phase shift to the unscattered beam in the back focal plan of the objective lens, in order to realize Zernike-type, in-focus phase contrast in an electron microscope. One application of the element is to increase the contrast of an electron microscope for viewing weakly scattering samples while in focus. Typical weakly scattering samples include biological samples such as macromolecules, or perhaps cells. Preliminary experimental images demonstrate that these devices do apply a ninety degree phase shift as expected. Electrostatic calculations have been used to determine that fringing fields in the region of the scattered electron beams will cause a negligible phase shift as long as the ratio of electrode length to the transverse feature-size aperture is about 5:1. Calculations are underway to determine the feasibility of aspect smaller aspect ratios of about 3:1 and about 2:1.

  5. Electronic Commerce user manual

    SciTech Connect

    Not Available

    1992-04-10

    This User Manual supports the Electronic Commerce Standard System. The Electronic Commerce Standard System is being developed for the Department of Defense of the Technology Information Systems Program at the Lawrence Livermore National Laboratory, operated by the University of California for the Department of Energy. The Electronic Commerce Standard System, or EC as it is known, provides the capability for organizations to conduct business electronically instead of through paper transactions. Electronic Commerce and Computer Aided Acquisition and Logistics Support, are two major projects under the DoD`s Corporate Information Management program, whose objective is to make DoD business transactions faster and less costly by using computer networks instead of paper forms and postage. EC runs on computers that use the UNIX operating system and provides a standard set of applications and tools that are bound together by a common command and menu system. These applications and tools may vary according to the requirements of the customer or location and may be customized to meet the specific needs of an organization. Local applications can be integrated into the menu system under the Special Databases & Applications option on the EC main menu. These local applications will be documented in the appendices of this manual. This integration capability provides users with a common environment of standard and customized applications.

  6. Electronic Commerce user manual

    SciTech Connect

    Not Available

    1992-04-10

    This User Manual supports the Electronic Commerce Standard System. The Electronic Commerce Standard System is being developed for the Department of Defense of the Technology Information Systems Program at the Lawrence Livermore National Laboratory, operated by the University of California for the Department of Energy. The Electronic Commerce Standard System, or EC as it is known, provides the capability for organizations to conduct business electronically instead of through paper transactions. Electronic Commerce and Computer Aided Acquisition and Logistics Support, are two major projects under the DoD's Corporate Information Management program, whose objective is to make DoD business transactions faster and less costly by using computer networks instead of paper forms and postage. EC runs on computers that use the UNIX operating system and provides a standard set of applications and tools that are bound together by a common command and menu system. These applications and tools may vary according to the requirements of the customer or location and may be customized to meet the specific needs of an organization. Local applications can be integrated into the menu system under the Special Databases Applications option on the EC main menu. These local applications will be documented in the appendices of this manual. This integration capability provides users with a common environment of standard and customized applications.

  7. Secondary Electron Emission Yields

    NASA Technical Reports Server (NTRS)

    Krainsky, I.; Lundin, W.; Gordon, W. L.; Hoffman, R. W.

    1981-01-01

    The secondary electron emission (SEE) characteristics for a variety of spacecraft materials were determined under UHV conditions using a commercial double pass CMA which permits sequential Auger electron electron spectroscopic analysis of the surface. The transparent conductive coating indium tin oxide (ITO) was examined on Kapton and borosilicate glass and indium oxide on FED Teflon. The total SEE coefficient ranges from 2.5 to 2.6 on as-received surfaces and from 1.5 to 1.6 on Ar(+) sputtered surfaces with 5 nm removed. A cylindrical sample carousel provides normal incidence of the primary beam as well as a multiple Faraday cup measurement of the approximately nA beam currents. Total and true secondary yields are obtained from target current measurements with biasing of the carousel. A primary beam pulsed mode to reduce electron beam dosage and minimize charging of insulating coatings was applied to Mg/F2 coated solar cell covers. Electron beam effects on ITO were found quite important at the current densities necessary to do Auger studies.

  8. Computed tomography of electronics

    NASA Astrophysics Data System (ADS)

    Bossi, Richard H.; Kruse, Robert J.; Knutson, Benjamin W.

    1989-12-01

    The application of Computed Tomography (CT) and laminography was tested on a variety of electronic components. The effort was performed as a preliminary testing task assignment in the Advanced Development of X ray Computed Tomography Application program. A key area for testing was printed circuit boards for the inspection of solder bonds and in particular for leadless chip carrier devices. During the course of the task assignment several other categories of electronic devices were examined including transformers, connectors, switches from solution and contrast sensitivity phantoms developed for the programs were used to establish quantitative measures of capability used to generate images. This preliminary testing of electronics lead to the conclusion that higher resolution CT scanning is needed to resolve details of interest. CT testing on commercially available system could resolve high contrast details in the range of 2 to 4 lp/mm; however, in many electronic components finer resolution is needed to detect microcracking, voiding and other features. Further testing on high resolution system is recommended. Two areas of immediate potential economic payback for electronics inspection were identified; the inspection of high volume printed circuit board production using high speed laminography and nondestructive failure analysis studies components using high-resolution CT.

  9. Pulsed electron beam precharger

    SciTech Connect

    Finney, W.C.; Shelton, W.N.

    1990-01-01

    Electrostatic collection of a high resistivity aerosol using the Electron Beam Precipitator (EBP) collecting section was demonstrated during this reporting period (Quarter Five). Collection efficiency experiments were designed to confirm and extend some of the work performed under the previous contract. The reason for doing this was to attempt to improve upon the collection efficiency of the precipitator alone when testing with a very high resistivity, moderate-to-high concentration dust load. From the collector shakedown runs, a set of suitable operational parameters were determined for the downstream electrostatic collecting sections of the Electron Beam Precipitator wind tunnel. These parameters, along with those for the MINACC electron beam, will generally be held constant while the numerous precharging parameters are varied to produce an optimum particle charge. The electrostatic collector experiments were part of a larger, comprehensive investigation on electron beam precharging of high resistivity aerosol particles performed during the period covered by Quarters Five, Six, and Seven. This body of work used the same experimental apparatus and procedures and the experimental run period lasted nearly continuously for six months. A summary of the Quarter Five work is presented in the following paragraphs. Section II-A of TPR 5 contains a report on the continuing effort which was expended on the modification and upgrade of the pulsed power supply and the monitoring systems prior to the initiation of the electron beam precharging experimental work.

  10. Electronic Spectroscopy & Dynamics

    SciTech Connect

    Mark Maroncelli, Nancy Ryan Gray

    2010-06-08

    The Gordon Research Conference (GRC) on Electronic Spectroscopy and Dynamics was held at Colby College, Waterville, NH from 07/19/2009 thru 07/24/2009. The Conference was well-attended with participants (attendees list attached). The attendees represented the spectrum of endeavor in this field coming from academia, industry, and government laboratories, both U.S. and foreign scientists, senior researchers, young investigators, and students. The GRC on Electronic Spectroscopy & Dynamics showcases some of the most recent experimental and theoretical developments in electronic spectroscopy that probes the structure and dynamics of isolated molecules, molecules embedded in clusters and condensed phases, and bulk materials. Electronic spectroscopy is an important tool in many fields of research, and this GRC brings together experts having diverse backgrounds in physics, chemistry, biophysics, and materials science, making the meeting an excellent opportunity for the interdisciplinary exchange of ideas and techniques. Topics covered in this GRC include high-resolution spectroscopy, biological molecules in the gas phase, electronic structure theory for excited states, multi-chromophore and single-molecule spectroscopies, and excited state dynamics in chemical and biological systems.

  11. Single-Electron Transistors

    NASA Astrophysics Data System (ADS)

    Fulton, T. A.

    2000-03-01

    Subsequent to the early work, the basic all-metal single-electron transistor (SET) and its semiconductor counterparts have become widely studied, both for their own behavior and for applications. For many people, the SET is an everyday research tool whose inner workings, even though they depend on charge quantization and the energy-time uncertainty principle, can readily be understood (given electron tunneling) by simple arguments based on elementary circuit models. Our own further studies, in various collaborations, were first concerned with finding and studying interactions between charging effects and Josephson tunneling in SET circuits, which had been the original motivation. Later, looking into applications for SETs, we demonstrated a crude but recognizable form of single-electron memory. Significant digital-circuit applications of SETs still seem remote, alas, but some analog applications are promising. Recently, in an ongoing collaboration, we have fabricated an SET on the tip of a tapered glass fiber for use as a scanning probe. With it, we have mapped the electric fields over a two-dimensional electron gas having a density, n, that varies with position. In the quantum Hall regime, step-like changes in surface potential are seen along lines where n corresponds to an integer filling factor ("edge-state regions"). Currently, we are investigating certain sub-micrometer structures, which sometimes form small networks, that appear in these regions. This structure seems to involve localization of individual electrons. note

  12. Circular free-electron laser

    DOEpatents

    Brau, Charles A.; Kurnit, Norman A.; Cooper, Richard K.

    1984-01-01

    A high efficiency, free electron laser utilizing a circular relativistic electron beam accelerator and a circular whispering mode optical waveguide for guiding optical energy in a circular path in the circular relativistic electron beam accelerator such that the circular relativistic electron beam and the optical energy are spatially contiguous in a resonant condition for free electron laser operation. Both a betatron and synchrotron are disclosed for use in the present invention. A free electron laser wiggler is disposed around the circular relativistic electron beam accelerator for generating a periodic magnetic field to transform energy from the circular relativistic electron beam to optical energy.

  13. Electron holes in inhomogeneous magnetic field: Electron heating and electron hole evolution

    NASA Astrophysics Data System (ADS)

    Vasko, I. Y.; Agapitov, O. V.; Mozer, F. S.; Artemyev, A. V.; Drake, J. F.

    2016-05-01

    Electron holes are electrostatic non-linear structures widely observed in the space plasma. In the present paper, we analyze the process of energy exchange between electrons trapped within electron hole, untrapped electrons, and an electron hole propagating in a weakly inhomogeneous magnetic field. We show that as the electron hole propagates into the region with stronger magnetic field, trapped electrons are heated due to the conservation of the first adiabatic invariant. At the same time, the electron hole amplitude may increase or decrease in dependence on properties of distribution functions of trapped and untrapped resonant electrons. The energy gain of trapped electrons is due to the energy losses of untrapped electrons and/or decrease of the electron hole energy. We stress that taking into account the energy exchange with untrapped electrons increases the lifetime of electron holes in inhomogeneous magnetic field. We illustrate the suggested mechanism for small-amplitude Schamel's [Phys. Scr. T2, 228-237 (1982)] electron holes and show that during propagation along a positive magnetic field gradient their amplitude should grow. Neglect of the energy exchange with untrapped electrons would result in the electron hole dissipation with only modest heating factor of trapped electrons. The suggested mechanism may contribute to generation of suprathermal electron fluxes in the space plasma.

  14. ELECTRON EMISSION REGULATING MEANS

    DOEpatents

    Brenholdt, I.R.

    1957-11-19

    >An electronic regulating system is described for controlling the electron emission of a cathode, for example, the cathode in a mass spectrometer. The system incorporates a transformer having a first secondary winding for the above-mentioned cathode and a second secondary winding for the above-mentioned cathode and a second secondary winding load by grid controlled vacuum tubes. A portion of the electron current emitted by the cathode is passed through a network which develops a feedback signal. The system arrangement is completed by using the feedback signal to control the vacuum tubes in the second secondary winding through a regulator tube. When a change in cathode emission occurs, the feedback signal acts to correct this change by adjusting the load on the transformer.

  15. Electron Flow through Proteins

    PubMed Central

    Gray, Harry B.; Winkler, Jay R.

    2009-01-01

    Electron transfers in photosynthesis and respiration commonly occur between metal-containing cofactors that are separated by large molecular distances. Employing laser flash-quench triggering methods, we have shown that 20-Å, coupling-limited FeII to RuIII and CuI to RuIII electron tunneling in Ru-modified cytochromes and blue copper proteins can occur on the microsecond timescale both in solutions and crystals. Redox equivalents can be transferred even longer distances by multistep tunneling, often called hopping, through intervening amino acid side chains. Our work has established that 20-Å hole hopping through an intervening tryptophan is two orders of magnitude faster than single-step electron tunneling in a Re-modified blue copper protein. PMID:20161522

  16. Electron launching voltage monitor

    DOEpatents

    Mendel, C.W.; Savage, M.E.

    1992-03-17

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors. 5 figs.

  17. Electron launching voltage monitor

    DOEpatents

    Mendel, Clifford W.; Savage, Mark E.

    1992-01-01

    An electron launching voltage monitor measures MITL voltage using a relationship between anode electric field and electron current launched from a cathode-mounted perturbation. An electron launching probe extends through and is spaced from the edge of an opening in a first MITL conductor, one end of the launching probe being in the gap between the MITL conductor, the other end being adjacent a first side of the first conductor away from the second conductor. A housing surrounds the launching probe and electrically connects the first side of the first conductor to the other end of the launching probe. A detector detects the current passing through the housing to the launching probe, the detected current being representative of the voltage between the conductors.

  18. Foil Electron Multiplier

    DOEpatents

    Funsten, Herbert O.; Baldonado, Juan R.; Dors, Eric E.; Harper, Ronnie W.; Skoug, Ruth M.

    2006-03-28

    An apparatus for electron multiplication by transmission that is designed with at least one foil having a front side for receiving incident particles and a back side for transmitting secondary electrons that are produced from the incident particles transiting through the foil. The foil thickness enables the incident particles to travel through the foil and continue on to an anode or to a next foil in series with the first foil. The foil, or foils, and anode are contained within a supporting structure that is attached within an evacuated enclosure. An electrical power supply is connected to the foil, or foils, and the anode to provide an electrical field gradient effective to accelerate negatively charged incident particles and the generated secondary electrons through the foil, or foils, to the anode for collection.

  19. Electronic communication. Part III.

    PubMed

    Bergren, M D

    1995-02-01

    This is the concluding article of a three-part series on electronic communication for school nurses. The October 1994 column described electronic communication and the hardware and software required. The December 1994 column examined e-mail, bulletin boards, databases, and file transfers. This column will list many health and nursing resources available on-line. Some of the resources are available only through the Internet. Others are accessible by more than one route: dial-in, telnet, gopher, or world wide web. A few of the services, such as MEDLINE, are only accessed with purchased accounts (Glowniak & Bushway, 1994). The electronic resources of interest to school nurses are so numerous it would be impossible to cite all of them in a column of this length. Selected resources for the school health provider will be listed in alphabetical order. PMID:7767047

  20. Electron transfer in proteins.

    PubMed

    Gray, H B; Winkler, J R

    1996-01-01

    Electron-transfer (ET) reactions are key steps in a diverse array of biological transformations ranging from photosynthesis to aerobic respiration. A powerful theoretical formalism has been developed that describes ET rates in terms of two parameters: the nuclear reorganization energy (lambda) and the electronic-coupling strength (HAB). Studies of ET reactions in ruthenium-modified proteins have probed lambda and HAB in several metalloproteins (cytochrome c, myoglobin, azurin). This work has shown that protein reorganization energies are sensitive to the medium surrounding the redox sites and that an aqueous environment, in particular, leads to large reorganization energies. Analyses of electronic-coupling strengths suggest that the efficiency of long-range ET depends on the protein secondary structure: beta sheets appear to mediate coupling more efficiently than alpha-helical structures, and hydrogen bonds play a critical role in both. PMID:8811189

  1. Electronics for Extreme Environments

    NASA Astrophysics Data System (ADS)

    Patel, J. U.; Cressler, J.; Li, Y.; Niu, G.

    2001-01-01

    Most of the NASA missions involve extreme environments comprising radiation and low or high temperatures. Current practice of providing friendly ambient operating environment to electronics costs considerable power and mass (for shielding). Immediate missions such as the Europa orbiter and lander and Mars landers require the electronics to perform reliably in extreme conditions during the most critical part of the mission. Some other missions planned in the future also involve substantial surface activity in terms of measurements, sample collection, penetration through ice and crust and the analysis of samples. Thus it is extremely critical to develop electronics that could reliably operate under extreme space environments. Silicon On Insulator (SOI) technology is an extremely attractive candidate for NASA's future low power and high speed electronic systems because it offers increased transconductance, decreased sub-threshold slope, reduced short channel effects, elimination of kink effect, enhanced low field mobility, and immunity from radiation induced latch-up. A common belief that semiconductor devices function better at low temperatures is generally true for bulk devices but it does not hold true for deep sub-micron SOI CMOS devices with microscopic device features of 0.25 micrometers and smaller. Various temperature sensitive device parameters and device characteristics have recently been reported in the literature. Behavior of state of the art technology devices under such conditions needs to be evaluated in order to determine possible modifications in the device design for better performance and survivability under extreme environments. Here, we present a unique approach of developing electronics for extreme environments to benefit future NASA missions as described above. This will also benefit other long transit/life time missions such as the solar sail and planetary outposts in which electronics is out open in the unshielded space at the ambient space

  2. Cold electronics: An overview

    NASA Technical Reports Server (NTRS)

    Kirschman, R.

    1984-01-01

    Generally speaking, several roles are seen for low temperatures in electronics: As a means of extracting better performance from existing technology, avoiding expense and delay required for the advances in design or fabrication which would be needed to achieve the same performance at room temperature. As a necessity in the quest for improved performance, to counteract detrimental effects which arises as technology is pushed to extremes. As an opportunity to take advantage of effects made available by low temperature operation, and to develop new devices based on them. The electronic devices and circuits considered are those based on semiconductivity. Superconductive devices and circuits are not included.

  3. Mechanics of hemispherical electronics

    NASA Astrophysics Data System (ADS)

    Wang, Shuodao; Xiao, Jianliang; Jung, Inhwa; Song, Jizhou; Ko, Heung Cho; Stoykovich, Mark P.; Huang, Yonggang; Hwang, Keh-Chih; Rogers, John A.

    2009-11-01

    A simple analytical model is established for the development of hemisphere electronics, which has many important applications in electronic-eye cameras and related curvilinear systems. The photodetector arrays, made in planar mesh layouts with conventional techniques, are deformed and transferred onto a hemisphere. The model gives accurately the positions of photodetectors on the hemisphere, and has been validated by experiments and finite element analysis. The results also indicate very small residual strains in the photodetectors. The model provides a tool to define a pattern of photodetectors in the planar, as-fabricated layout to yield any desired spatial configuration on the hemisphere.

  4. Precision electron polarimetry

    SciTech Connect

    Chudakov, Eugene A.

    2013-11-01

    A new generation of precise Parity-Violating experiments will require a sub-percent accuracy of electron beam polarimetry. Compton polarimetry can provide such accuracy at high energies, but at a few hundred MeV the small analyzing power limits the sensitivity. M{\\o}ller polarimetry provides a high analyzing power independent on the beam energy, but is limited by the properties of the polarized targets commonly used. Options for precision polarimetry at ~300 MeV will be discussed, in particular a proposal to use ultra-cold atomic hydrogen traps to provide a 100\\%-polarized electron target for M{\\o}ller polarimetry.

  5. Precision electron polarimetry

    SciTech Connect

    Chudakov, E.

    2013-11-07

    A new generation of precise Parity-Violating experiments will require a sub-percent accuracy of electron beam polarimetry. Compton polarimetry can provide such accuracy at high energies, but at a few hundred MeV the small analyzing power limits the sensitivity. Mo/ller polarimetry provides a high analyzing power independent on the beam energy, but is limited by the properties of the polarized targets commonly used. Options for precision polarimetry at 300 MeV will be discussed, in particular a proposal to use ultra-cold atomic hydrogen traps to provide a 100%-polarized electron target for Mo/ller polarimetry.

  6. Cylindrical electron beam diode

    DOEpatents

    Bolduc, Paul E.

    1976-01-01

    A diode discharge device may include a tubular anode concentrically encircled by and spaced from a tubular cathode electrode with ends intermediate the ends of said anode electrode, and a metal conductive housing having a tubular wall disposed around the cathode electrode with end walls connected to the anode electrode. High energy electron current coupling is through an opening in the housing tubular wall to a portion of the cathode electrode intermediate its ends. Suitable utilization means may be within the anode electrode at positions to be irradiated by electrons emitted from the cathode electrode and transmitted through the anode walls.

  7. Electronics for better healthcare.

    PubMed

    Wolf, Bernhard; Herzog, Karolin

    2013-06-01

    Microelectronics and microsystem technology have changed our daily lives considerably in the past 50 years. Countless everyday objects contain microelectronic components. In healthcare up to the present, however, it has not been possible to make major alterations in introducing electronics and information technology that would lead to innovative improvements and greater transparency. This paper describes initial steps in diagnostics and oncological therapy including telematic healthcare systems which can, for example, assist patients with cardiovascular diseases and shows, through these areas, how electronics and microsystems technology can contribute to better healthcare. PMID:23702983

  8. Electronic image analysis

    NASA Astrophysics Data System (ADS)

    Gahm, J.; Grosskopf, R.; Jaeger, H.; Trautwein, F.

    1980-12-01

    An electronic system for image analysis was developed on the basis of low and medium cost integrated circuits. The printed circuit boards were designed, using the principles of modern digital electronics and data processing. The system consists of modules for automatic, semiautomatic and visual image analysis. They can be used for microscopical and macroscopical observations. Photographs can be evaluated, too. The automatic version is controlled by software modules adapted to various applications. The result is a system for image analysis suitable for many different measurement problems. The features contained in large image areas can be measured. For automatic routine analysis controlled by processing calculators the necessary software and hardware modules are available.

  9. Gallium nitride electronics

    NASA Astrophysics Data System (ADS)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  10. Nanotechnology in paper electronics

    NASA Astrophysics Data System (ADS)

    Demming, Anna; Österbacka, Professor Ronald; Han, Jin-Woo, Dr

    2014-03-01

    The ability to put cutting edge technology on paper—not in words but in a working physical form—has been attracting an increasing number of researchers over the past decade. Paper has many advantages that make it attractive for flexible electronics: it is relatively environmentally benign; it is renewable; it can be recycled; it is light weight; production processes for paper are well advanced; and it is inexpensive. This special issue, with guest editors Ronald Österbacka from Åbo Akademi University in Finland and Jin-Woo Han from the NASA AMES Research Center, features some of the latest in paper electronics research, including developments towards applications in displays, sensing and alternative energy sources, as well as fundamental studies to further our understanding of how paper can be most effectively used in electronics. As Andrew Steckl and colleagues in the US point out, 'Cellulose-based paper substrates were implemented as an electronic substrate as early as 1969, with most advancement occurring in the past decade largely due to technology improvements in thin film deposition and organic materials' [1, 2]. They report a detailed comparison between paper, standard liquid crystal display rigid glass and flexible glass for hosting pentacene organic thin film transistors, and obtain promising results for future paper-based devices. As most meaningful electronic devices rely on transistors to function, transistors feature quite prominently in this special issue. Rodrigo Martins and colleagues in France and Portugal study the effect of fibre type, structure and dimension on paper-based transistors and reveal further insights into how paper properties affect device performance [3]. Qing Wan and colleagues in China bring the state of the art in transistor technology to paper substrates [4], fabricating indium-zinc-oxide (IZO)-based protonic/electronic hybrid thin film transistors on paper and showing that they can be used as artificial synapses. Like the

  11. Electron-electron interactions in fast neutral-neutral collisions

    SciTech Connect

    DuBois, R.D. ); Manson, S.T. . Dept. of Physics and Astronomy)

    1992-11-01

    Differential electron emission is studied for 50--500 keV H[sup +] and H atom impact on helium. Using the first Born formulation, it is shown that projectile electron-target electron interactions are expected to dominate the differential cross sections for low energy target electron emission induced by fast neutral projectile impact on any target. Measurements of the 15[degrees] electron emission were made in order to investigate this prediction. For low impact energies, a constant ratio between the hydrogen atom and proton impact cross sections was found for emitted electron velocities less than half the projectile velocity, V[sub p] But as the collision energy increased, for electron velocities less than 0.25 V[sub p], the cross section ratio increased as the emitted electron velocity decreased. This is interpreted as a signature of projectile electron-target electron interactions becoming dominant for distant collisions between neutral particles.

  12. Electron-electron interactions in fast neutral-neutral collisions

    SciTech Connect

    DuBois, R.D.; Manson, S.T.

    1992-11-01

    Differential electron emission is studied for 50--500 keV H{sup +} and H atom impact on helium. Using the first Born formulation, it is shown that projectile electron-target electron interactions are expected to dominate the differential cross sections for low energy target electron emission induced by fast neutral projectile impact on any target. Measurements of the 15{degrees} electron emission were made in order to investigate this prediction. For low impact energies, a constant ratio between the hydrogen atom and proton impact cross sections was found for emitted electron velocities less than half the projectile velocity, V{sub p} But as the collision energy increased, for electron velocities less than 0.25 V{sub p}, the cross section ratio increased as the emitted electron velocity decreased. This is interpreted as a signature of projectile electron-target electron interactions becoming dominant for distant collisions between neutral particles.

  13. The electronic stethoscope.

    PubMed

    Leng, Shuang; Tan, Ru San; Chai, Kevin Tshun Chuan; Wang, Chao; Ghista, Dhanjoo; Zhong, Liang

    2015-01-01

    Most heart diseases are associated with and reflected by the sounds that the heart produces. Heart auscultation, defined as listening to the heart sound, has been a very important method for the early diagnosis of cardiac dysfunction. Traditional auscultation requires substantial clinical experience and good listening skills. The emergence of the electronic stethoscope has paved the way for a new field of computer-aided auscultation. This article provides an in-depth study of (1) the electronic stethoscope technology, and (2) the methodology for diagnosis of cardiac disorders based on computer-aided auscultation. The paper is based on a comprehensive review of (1) literature articles, (2) market (state-of-the-art) products, and (3) smartphone stethoscope apps. It covers in depth every key component of the computer-aided system with electronic stethoscope, from sensor design, front-end circuitry, denoising algorithm, heart sound segmentation, to the final machine learning techniques. Our intent is to provide an informative and illustrative presentation of the electronic stethoscope, which is valuable and beneficial to academics, researchers and engineers in the technical field, as well as to medical professionals to facilitate its use clinically. The paper provides the technological and medical basis for the development and commercialization of a real-time integrated heart sound detection, acquisition and quantification system. PMID:26159433

  14. Electronic Inspection of Beef

    NASA Technical Reports Server (NTRS)

    Anselmo, Victor J.; Gammell, Paul M.; Clark, Jerry

    1987-01-01

    Two proposed methods for grading beef quality based on inspection by electronic equipment: one method uses television camera to generate image of a cut of beef as customer sees it; other uses ultrasonics to inspect live animal or unsliced carcasses. Both methods show promise for automated meat inspection.

  15. Electronically controlled automatic transmission

    SciTech Connect

    Ohkubo, M.; Shiba, H.; Nakamura, K.

    1989-03-28

    This patent describes an electronically controlled automatic transmission having a manual valve working in connection with a manual shift lever, shift valves operated by solenoid valves which are driven by an electronic control circuit previously memorizing shift patterns, and a hydraulic circuit controlled by these manual valve and shift valves for driving brakes and a clutch in order to change speed. Shift patterns of 2-range and L-range, in addition to a shift pattern of D-range, are memorized previously in the electronic control circuit, an operation switch is provided which changes the shift pattern of the electronic control circuit to any shift pattern among those of D-range, 2-range and L-range at time of the manual shift lever being in a D-range position, a releasable lock mechanism is provided which prevents the manual shift lever from entering 2-range and L-range positions, and the hydraulic circuit is set to a third speed mode when the manual shift lever is in the D-range position. The circuit is set to a second speed mode when it is in the 2-range position, and the circuit is set to a first speed mode when it is in the L-range position, respectively, in case where the shift valves are not working.

  16. Use an Electronic Gradebook.

    ERIC Educational Resources Information Center

    Shalvoy, Mary Lee

    1985-01-01

    Describes range of options and features in gradebook programs and reviews most popular and readily available software for organizing, calculating, and updating grades: Master Grades, EA Gradebook, Gradeaid, Grader, Graphic Gradebook, Classic Plus Gradekeeping System, Records, Gradecalc, Grade Master, Report Card, Electronic Gradebook for…

  17. Designing the Electronic Classroom.

    ERIC Educational Resources Information Center

    Adams, Laural L.

    In an increasingly technological environment, traditional teaching presentation methods such as the podium, overhead, and transparencies are no longer sufficient. This document serves as a guide to designing and planning an electronic classroom for "bidirectional" communication between teacher and student. Topics include: (1) determining whether…

  18. Competencies for Articulation: Electronics.

    ERIC Educational Resources Information Center

    Southeast Community Coll., Lincoln, NE.

    Designed to help articulate vocational education student progress from one level of training to another and to employment, this electronics education guide lists competencies for soldering; performing basic operations with test equipment; servicing basic logic circuits; servicing DC power supplies; servicing solid state amplifiers; and servicing…

  19. Readily Made Solvated Electrons

    ERIC Educational Resources Information Center

    Ibanez, Jorge G.; Guerra-Millan, Francisco J.; Hugerat, Muhamad; Vazquez-Olavarrieta, Jorge L.; Basheer, Ahmad; Abu-Much, Riam

    2011-01-01

    The existence of solvated electrons has been known for a long time. Key methods for their production (i.e., photoionization of reducing ions, water radiolysis, and the reaction between H[middle dot] and OH[superscript -]) are unsuitable for most school laboratories. We describe a simple experiment to produce liquid ammonia and solvated electrons…

  20. Electronic sleep analyzer

    NASA Technical Reports Server (NTRS)

    Frost, J. D., Jr.

    1970-01-01

    Electronic instrument automatically monitors the stages of sleep of a human subject. The analyzer provides a series of discrete voltage steps with each step corresponding to a clinical assessment of level of consciousness. It is based on the operation of an EEG and requires very little telemetry bandwidth or time.

  1. Japan's electronic packaging technologies

    NASA Technical Reports Server (NTRS)

    Tummala, Rao R.; Pecht, Michael

    1995-01-01

    The JTEC panel found Japan to have significant leadership over the United States in the strategic area of electronic packaging. Many technologies and products once considered the 'heart and soul' of U.S. industry have been lost over the past decades to Japan and other Asian countries. The loss of consumer electronics technologies and products is the most notable of these losses, because electronics is the United States' largest employment sector and is critical for growth businesses in consumer products, computers, automobiles, aerospace, and telecommunications. In the past there was a distinction between consumer and industrial product technologies. While Japan concentrated on the consumer market, the United States dominated the industrial sector. No such distinction is anticipated in the future; the consumer-oriented technologies Japan has dominated are expected to characterize both domains. The future of U.S. competitiveness will, therefore, depend on the ability of the United States to rebuild its technological capabilities in the area of portable electronic packaging.

  2. The Art of Electronics

    NASA Astrophysics Data System (ADS)

    Horowitz, Paul; Hill, Winfield

    2015-04-01

    1. Foundations; 2. Bipolar transistors; 3. Field effect transistors; 4. Operational amplifiers; 5. Precision circuits; 6. Filters; 7. Oscillators and timers; 8. Low noise techniques and transimpedance; 9. Power regulation; 10. Digital electronics; 11. Programmable logic devices; 12. Logical interfacing; 13. Digital meets analog; 14. Computers, controllers, and data links; 15. Microcontrollers.

  3. An electronic electroscope

    NASA Astrophysics Data System (ADS)

    Thompson, Frank

    2014-01-01

    An electronic electroscope has been constructed to update the design of a similar instrument reported in Physics Education several decades ago. The presence of positive or negative charges is easily distinguished with this electroscope and an experiment with a Faraday cup is carried out to show how easy it is to record the accumulation of charge with time.

  4. Milestones in Electron Crystallography

    PubMed Central

    Renault, Ludovic; Chou, Hui-Ting; Chiu, Po-Lin; Hill, Rena M.; Zeng, Xiangyan; Gipson, Bryant; Zhang, Zi Yan; Cheng, Anchi; Unger, Vinzenz; Stahlberg, Henning

    2007-01-01

    Summary Electron crystallography determines the structure of membrane embedded proteins in the two-dimensionally crystallized state by cryo-transmission electron microscopy imaging and computer structure reconstruction. Milestones on the path to the structure are high-level expression, purification of functional protein, reconstitution into two-dimensional lipid membrane crystals, high-resolution imaging, and structure determination by computer image processing. Here we review the current state of these methods. We also created an Internet information exchange platform for electron crystallography, where guidelines for the imaging and data processing method are maintained. The server (http://2dx.org) provides the electron crystallography community with a central information exchange platform, which is structured in blog and Wiki form, allowing visitors to add comments or discussions. It currently offers a detailed step-by-step introduction to image processing with the MRC software program. The server is also a repository for the 2dx software package, a user-friendly image processing system for 2D membrane protein crystals. PMID:17103018

  5. Squeezable electron tunneling junctions

    NASA Astrophysics Data System (ADS)

    Moreland, J.; Alexander, S.; Cox, M.; Sonnenfeld, R.; Hansma, P. K.

    1983-09-01

    We report a versatile new technique for constructing electron tunneling junctions with mechanically-adjusted artificial barriers. I-V curves are presented for tunneling between Ag electrodes with vacuum, gas, liquid or solid in the barrier. An energy gap is apparent in the measured I-V curve when tunneling occurs between superconducting Pb electrodes.

  6. The Electronic Straitjacket.

    ERIC Educational Resources Information Center

    Swan, John

    1993-01-01

    Considers the impact of electronic information on libraries. Topics discussed include user needs; the accuracy and reliability of information; equity of access to information; cooperation and coordination; prospects of a paperless society; and integrating technology with other elements of information, rather than replacing all elements with…

  7. Electron beam cutting

    DOEpatents

    Mochel, Margaret E.; Humphreys, Colin J.

    1985-04-02

    A method for the cutting of holes 20 Angstroms in diameter, or lines 20 Angstroms wide in a material having positive ionic conduction by the use of a focused electron probe is described. The holes and lines are stable under ambient conditions.

  8. Electron beam cutting

    DOEpatents

    Mochel, M.E.; Humphreys, C.J.

    1985-04-02

    A method for the cutting of holes 20 Angstroms in diameter, or lines 20 Angstroms wide in a material having positive ionic conduction by the use of a focused electron probe is described. The holes and lines are stable under ambient conditions. 2 figs.

  9. Theme: The Electronic Classroom.

    ERIC Educational Resources Information Center

    Herz, Bruce; And Others

    1988-01-01

    Consists of seven articles on the use of electronics in vocational agricultural education. Topics include (1) the Ag Ed Network, (2) computer simulations, (3) video simulation, (4) classroom equipment, (4) online information systems, (5) expert systems, and (6) computer networking in California. (CH)

  10. ELECTRONIC RESEARCH NOTEBOOKS

    EPA Science Inventory

    The paper details the public availability of Electronic notebooks (EN) and an example of a system in use within a research laboratory in the Office of Research and Development. Research notebooks contain intellectual property which must be guarded until it can be disseminated wit...

  11. Electronic Load Bank

    NASA Technical Reports Server (NTRS)

    Huston, Steven W.

    1992-01-01

    Electronic load-bank circuit provides pulsed or continuous low-resistance load to imitate effect of short circuit on Ni/H2 or other electrochemical power cells. Includes safety/warning feature and taps for measurement of cell-output voltage and current.

  12. Japan's electronic packaging technologies

    NASA Astrophysics Data System (ADS)

    Tummala, Rao R.; Pecht, Michael

    1995-02-01

    The JTEC panel found Japan to have significant leadership over the United States in the strategic area of electronic packaging. Many technologies and products once considered the 'heart and soul' of U.S. industry have been lost over the past decades to Japan and other Asian countries. The loss of consumer electronics technologies and products is the most notable of these losses, because electronics is the United States' largest employment sector and is critical for growth businesses in consumer products, computers, automobiles, aerospace, and telecommunications. In the past there was a distinction between consumer and industrial product technologies. While Japan concentrated on the consumer market, the United States dominated the industrial sector. No such distinction is anticipated in the future; the consumer-oriented technologies Japan has dominated are expected to characterize both domains. The future of U.S. competitiveness will, therefore, depend on the ability of the United States to rebuild its technological capabilities in the area of portable electronic packaging.

  13. MEIC electron cooling program

    SciTech Connect

    Derbenev, Yaroslav S.; Zhang, Yuhong

    2014-12-01

    Cooling of proton and ion beams is essential for achieving high luminosities (up to above 1034 cm-2s-1) for MEIC, a Medium energy Electron-Ion Collider envisioned at JLab [1] for advanced nuclear science research. In the present conceptual design, we utilize the conventional election cooling method and adopted a multi-staged cooling scheme for reduction of and maintaining low beam emittances [2,3,4]. Two electron cooling facilities are required to support the scheme: one is a low energy (up to 2 MeV) DC cooler installed in the MEIC ion pre-booster (with the proton kinetic energy up to 3 GeV); the other is a high electron energy (up to 55 MeV) cooler in the collider ring (with the proton kinetic energy from 25 to 100 GeV). The high energy cooler, which is based on the ERL technology and a circulator ring, utilizes a bunched electron beam to cool bunched proton or ion beams. To complete the MEIC cooling concept and a technical design of the ERL cooler as well as to develop supporting technologies, an R&D program has been initiated at Jefferson Lab and significant progresses have been made since then. In this study, we present a brief description of the cooler design and a summary of the progress in this cooling R&D.

  14. The Electronic Classroom.

    ERIC Educational Resources Information Center

    Mueller, Richard J.

    Current computerized electronic technology is making possible, not only the broad and rapid distribution of information, but also its manipulation, analysis, synthesis, and recombination. The shift from print to a combination of visual and oral expression is being propelled by the mass media, and visual literacy is both a concept and an…

  15. Electron energies in metals

    SciTech Connect

    Mahan, G.D. Tennessee Univ., Knoxville, TN . Dept. of Physics and Astronomy)

    1991-07-10

    The modern era of electron-electron interactions began a decade ago. Plummer's group initiated a program of using angular resolved photoemission to examine the band structure of the simple metals. Beginning with aluminum, and carrying on to sodium and potassium, they always found that the occupied energy bands were much narrower than expected. For example, the compressed energy bands for metallic potassium suggest a band effective mass of m* = 1.33m{sub e}. This should be compared to the band mass found from optical conductivity m*/m{sub e} = 1.01 {plus minus} 0.01. The discrepancy between these results is startling. It was this great difference which started my group doing calculations. Our program was two-fold. On one hand, we reanalyzed the experimental data, in order to see if Plummer's result was an experimental artifact. On the other hand, we completely redid the electron-electron self-energy calculations for simple metals, using the most modern choices of local-field corrections and vertex corrections. Our results will be reported in these lectures. They can be summarized as following: Our calculations give the same effective masses as the older calculations, so the theory is relatively unchanged; Our analysis of the experiments suggests that the recent measurements of band narrowing are an experimental artifact. 38 refs., 9 figs.

  16. International Competitiveness in Electronics.

    ERIC Educational Resources Information Center

    Congress of the U.S., Washington, DC. Office of Technology Assessment.

    This assessment continues the Office of Technology Assessment's (OTA) exploration of the meaning of industrial policy in the United States context, while also examining the industrial policies of several U.S. economic rivals. The major focus is on electronics, an area which virtually defines "high technology" of the 1980's. The assessment sets the…

  17. Shipboard Electronic Equipments.

    ERIC Educational Resources Information Center

    Naval Personnel Program Support Activity, Washington, DC.

    Fundamentals of major electronic equipments on board ships are presented in this text prepared for naval officers in general. Basic radio principles are discussed in connection with various types of transmitters, receivers, antennas, couplers, transfer panels, remote-control units, frequency standard equipments, teletypewriters, and facsimile…

  18. Forensic Scanning Electron Microscope

    NASA Astrophysics Data System (ADS)

    Keeley, R. H.

    1983-03-01

    The scanning electron microscope equipped with an x-ray spectrometer is a versatile instrument which has many uses in the investigation of crime and preparation of scientific evidence for the courts. Major applications include microscopy and analysis of very small fragments of paint, glass and other materials which may link an individual with a scene of crime, identification of firearms residues and examination of questioned documents. Although simultaneous observation and chemical analysis of the sample is the most important feature of the instrument, other modes of operation such as cathodoluminescence spectrometry, backscattered electron imaging and direct x-ray excitation are also exploited. Marks on two bullets or cartridge cases can be compared directly by sequential scanning with a single beam or electronic linkage of two instruments. Particles of primer residue deposited on the skin and clothing when a gun is fired can be collected on adhesive tape and identified by their morphology and elemental composition. It is also possible to differentiate between the primer residues of different types of ammunition. Bullets may be identified from the small fragments left behind as they pass through the body tissues. In the examination of questioned documents the scanning electron microscope is used to establish the order in which two intersecting ink lines were written and to detect traces of chemical markers added to the security inks on official documents.

  19. ELECTRON AMPLIFICATION IN DIAMOND.

    SciTech Connect

    SMEDLEY, J.; BEN-ZVI, I.; BURRILL, A.; CHANG, X.; GRIMES, J.; RAO, T.; SEGALOV, Z.; WU, Q.

    2006-07-10

    We report on recent progress toward development of secondary emission ''amplifiers'' for photocathodes. Secondary emission gain of over 300 has been achieved in transmission mode and emission mode for a variety of diamond samples. Techniques of sample preparation, including hydrogenation to achieve negative electron affinity (NEA), have been adapted to this application.

  20. ELECTRONIC DIGITAL COMPUTER

    DOEpatents

    Stone, J.J. Jr.; Bettis, E.S.; Mann, E.R.

    1957-10-01

    The electronic digital computer is designed to solve systems involving a plurality of simultaneous linear equations. The computer can solve a system which converges rather rapidly when using Von Seidel's method of approximation and performs the summations required for solving for the unknown terms by a method of successive approximations.

  1. Quantitative Electron Nanodiffraction.

    SciTech Connect

    Spence, John

    2015-01-30

    This Final report summarizes progress under this award for the final reporting period 2002 - 2013 in our development of quantitive electron nanodiffraction to materials problems, especially devoted to atomistic processes in semiconductors and electronic oxides such as the new artificial oxide multilayers, where our microdiffraction is complemented with energy-loss spectroscopy (ELNES) and aberration-corrected STEM imaging (9). The method has also been used to map out the chemical bonds in the important GaN semiconductor (1) used for solid state lighting, and to understand the effects of stacking sequence variations and interfaces in digital oxide superlattices (8). Other projects include the development of a laser-beam Zernike phase plate for cryo-electron microscopy (5) (based on the Kapitza-Dirac effect), work on reconstruction of molecular images using the scattering from many identical molecules lying in random orientations (4), a review article on space-group determination for the International Tables on Crystallography (10), the observation of energy-loss spectra with millivolt energy resolution and sub-nanometer spatial resolution from individual point defects in an alkali halide, a review article for the Centenary of X-ray Diffration (17) and the development of a new method of electron-beam lithography (12). We briefly summarize here the work on GaN, on oxide superlattice ELNES, and on lithography by STEM.

  2. Basic Electronics II.

    ERIC Educational Resources Information Center

    Willison, Neal A.; Shelton, James K.

    Designed for use in basic electronics programs, this curriculum guide is comprised of 15 units of instruction. Unit titles are Review of the Nature of Matter and the P-N Junction, Rectifiers, Filters, Special Semiconductor Diodes, Bipolar-Junction Diodes, Bipolar Transistor Circuits, Transistor Amplifiers, Operational Amplifiers, Logic Devices,…

  3. MEIC electron cooling program

    DOE PAGESBeta

    Derbenev, Yaroslav S.; Zhang, Yuhong

    2014-12-01

    Cooling of proton and ion beams is essential for achieving high luminosities (up to above 1034 cm-2s-1) for MEIC, a Medium energy Electron-Ion Collider envisioned at JLab [1] for advanced nuclear science research. In the present conceptual design, we utilize the conventional election cooling method and adopted a multi-staged cooling scheme for reduction of and maintaining low beam emittances [2,3,4]. Two electron cooling facilities are required to support the scheme: one is a low energy (up to 2 MeV) DC cooler installed in the MEIC ion pre-booster (with the proton kinetic energy up to 3 GeV); the other is amore » high electron energy (up to 55 MeV) cooler in the collider ring (with the proton kinetic energy from 25 to 100 GeV). The high energy cooler, which is based on the ERL technology and a circulator ring, utilizes a bunched electron beam to cool bunched proton or ion beams. To complete the MEIC cooling concept and a technical design of the ERL cooler as well as to develop supporting technologies, an R&D program has been initiated at Jefferson Lab and significant progresses have been made since then. In this study, we present a brief description of the cooler design and a summary of the progress in this cooling R&D.« less

  4. Tools for Electronic Portfolios.

    ERIC Educational Resources Information Center

    Farmer, Lesley S. J.

    1997-01-01

    Electronic portfolios offer an alternative to grades and standardized tests because they store work compactly, accommodate a variety of media, and are easily accessible. This article examines storage methods: diskettes, Zip, Syquest, and Jaz drives; compact disk recordable (CD-R); local area networks (LAN); audio and videotapes and discusses…

  5. Electronics Book II.

    ERIC Educational Resources Information Center

    Johnson, Dennis; And Others

    This manual, the second of three curriculum guides for an electronics course, is intended for use in a program combining vocational English as a second language (VESL) with bilingual vocational education. Ten units cover the electrical team, Ohm's law, Watt's law, series resistive circuits, parallel resistive circuits, series parallel circuits,…

  6. Packaging of electronic modules

    NASA Technical Reports Server (NTRS)

    Katzin, L.

    1966-01-01

    Study of design approaches that are taken toward optimizing the packaging of electronic modules with respect to size, shape, component orientation, interconnections, and structural support. The study does not present a solution to specific packaging problems, but rather the factors to be considered to achieve optimum packaging designs.

  7. Using Electronic Portfolios

    ERIC Educational Resources Information Center

    Page, Deb

    2012-01-01

    The digitized collections of artifacts known as electronic portfolios are creating solutions to a variety of performance improvement needs in ways that are cost-effective and improve both individual and group learning and performance. When social media functionality is embedded in e-portfolios, the tools support collaboration, social learning,…

  8. Inventing the Electronic University

    ERIC Educational Resources Information Center

    Lewis, David W.

    2015-01-01

    Higher education is confronting a fundamental change. The transition from print on paper to digital and electronic technologies is transforming instruction, scholarly communication, and the storage and preservation of knowledge. What is required is not the automation of old systems, but the restructuring of institutions. The drive for autonomy,…

  9. Electronically Enhanced Classroom Interaction.

    ERIC Educational Resources Information Center

    Draper, Stephen; Cargill, Julie; Cutts, Quintin

    A design rationale for introducing electronic equipment (a group response system) for student interaction in lecture theaters is presented, linking the instructional design to theory. The effectiveness of the equipment for learning depends mostly on what pedagogic method is employed. Various alternative types are introduced, including: assessment;…

  10. Projectable Basic Electronics Kit.

    ERIC Educational Resources Information Center

    H'ng, John; And Others

    1982-01-01

    Outlines advantages derived from constructing and using a Projectable Basic Electronics Kit and provides: (1) list of components; (2) diagrams of 10 finished components (resistor; capacitor; diode; switch; bulb; transistor; meter; variable capacitor; coil; connecting terminal); and (3) diode and transistor activities. (JN)

  11. Electronics Book III.

    ERIC Educational Resources Information Center

    Johnson, Dennis; And Others

    This manual, the third of three curriculum guides for an electronics course, is intended for use in a program combining vocational English as a second language (VESL) with bilingual vocational education. Ten units cover AC fundamentals, circuit protection devices, low voltage circuits, communication systems, graphic illustrations, house wiring,…

  12. Free-Electron Lasers.

    ERIC Educational Resources Information Center

    Brau, Charles A.

    1988-01-01

    Describes the use of free-electron lasers as a source of coherent radiation over a broad range of wavelengths from the far-infrared to the far-ultraviolet regions of the spectrum. Discusses some applications of these lasers, including medicine and strategic defense. (TW)

  13. Electronic Document Supply Systems.

    ERIC Educational Resources Information Center

    Cawkell, A. E.

    1991-01-01

    Describes electronic document delivery systems used by libraries and document image processing systems used for business purposes. Topics discussed include technical specifications; analogue read-only laser videodiscs; compact discs and CD-ROM; WORM; facsimile; ADONIS (Article Delivery over Network Information System); DOCDEL; and systems at the…

  14. Electronic document interchange

    NASA Technical Reports Server (NTRS)

    Erwin, Jim

    1993-01-01

    The operational impact of various storage formats related to electronic publishing of documents in the NASA Scientific and Technical Information (STI) Program is discussed. Questions are raised about the development of full text, surrogate, and hybrid storage formats. It appears that the eventual configuration will contain a mix of storage formats based on user demand.

  15. Electronic Library: A TERI Experiment.

    ERIC Educational Resources Information Center

    Kar, Debal C.; Deb, Subrata; Kumar, Satish

    2003-01-01

    Discusses the development of Electronic Library at TERI (The Energy and Resources Institute, New Delhi). Highlights include: hardware and software used; the digital library/Virtual Electronic Library; directory of Internet journals; virtual reference resources; electronic collection/Physical Electronic Library; downloaded online full-length…

  16. Electron Spin and Its History

    NASA Astrophysics Data System (ADS)

    Commins, Eugene D.

    2012-11-01

    The history of electron spin is summarized. Topics include the discovery of electron spin, the birth of quantum electrodynamics, the invention of magnetic resonance, the invention of renormalization, the anomalous magnetic moment of the electron in experiment and theory, and searches for the electron electric dipole moment.

  17. Electron Interactions with SF_6

    NASA Astrophysics Data System (ADS)

    Christophorou, Loucas; Olthoff, James; Siegel, Ralph; Hayashi, Makoto; Nakamura, Yoshiharu

    1999-10-01

    Experimental data on electron collisions with SF6 have been reviewed and assessed. Recommended or suggested data will be presented for the cross sections for total, elastic, and differential electron scattering, for total and partial ionization, and for electron attachment. Similarly, recommended or suggested data will be presented as a function of E/N for the electron drift velocity, and the coefficients for electron diffusion, ionization, and attachment. Assessed data will be presented also on the electron attachment rate constant as a function of E/N in the pure gas and in mixtures with rare gases and N_2, and as a function of the mean electron energy and gas temperature.

  18. Electron jet of asymmetric reconnection

    NASA Astrophysics Data System (ADS)

    Khotyaintsev, Yu. V.; Graham, D. B.; Norgren, C.; Eriksson, E.; Li, W.; Johlander, A.; Vaivads, A.; André, M.; Pritchett, P. L.; Retinò, A.; Phan, T. D.; Ergun, R. E.; Goodrich, K.; Lindqvist, P.-A.; Marklund, G. T.; Le Contel, O.; Plaschke, F.; Magnes, W.; Strangeway, R. J.; Russell, C. T.; Vaith, H.; Argall, M. R.; Kletzing, C. A.; Nakamura, R.; Torbert, R. B.; Paterson, W. R.; Gershman, D. J.; Dorelli, J. C.; Avanov, L. A.; Lavraud, B.; Saito, Y.; Giles, B. L.; Pollock, C. J.; Turner, D. L.; Blake, J. D.; Fennell, J. F.; Jaynes, A.; Mauk, B. H.; Burch, J. L.

    2016-06-01

    We present Magnetospheric Multiscale observations of an electron-scale current sheet and electron outflow jet for asymmetric reconnection with guide field at the subsolar magnetopause. The electron jet observed within the reconnection region has an electron Mach number of 0.35 and is associated with electron agyrotropy. The jet is unstable to an electrostatic instability which generates intense waves with E∥ amplitudes reaching up to 300 mV m-1 and potentials up to 20% of the electron thermal energy. We see evidence of interaction between the waves and the electron beam, leading to quick thermalization of the beam and stabilization of the instability. The wave phase speed is comparable to the ion thermal speed, suggesting that the instability is of Buneman type, and therefore introduces electron-ion drag and leads to braking of the electron flow. Our observations demonstrate that electrostatic turbulence plays an important role in the electron-scale physics of asymmetric reconnection.

  19. Diamondoid monolayers as electron emitters

    DOEpatents

    Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

    2012-04-10

    Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

  20. Diamondoid monolayers as electron emitters

    DOEpatents

    Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

    2013-10-29

    Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.