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Sample records for engineered semiconductors ii

  1. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used

  2. Semiconductor alloys - Structural property engineering

    NASA Technical Reports Server (NTRS)

    Sher, A.; Van Schilfgaarde, M.; Berding, M.; Chen, A.-B.

    1987-01-01

    Semiconductor alloys have been used for years to tune band gaps and average bond lengths to specific applications. Other selection criteria for alloy composition, and a growth technique designed to modify their structural properties, are presently considered. The alloys Zn(1-y)Cd(y)Te and CdSe(y)Te(1-y) are treated as examples.

  3. Mod II engine performance

    NASA Technical Reports Server (NTRS)

    Richey, Albert E.; Huang, Shyan-Cherng

    1987-01-01

    The testing of a prototype of an automotive Stirling engine, the Mod II, is discussed. The Mod II is a one-piece cast block with a V-4 single-crankshaft configuration and an annular regenerator/cooler design. The initial testing of Mod II concentrated on the basic engine, with auxiliaries driven by power sources external to the engine. The performance of the engine was tested at 720 C set temperature and 820 C tube temperature. At 720 C, it is observed that the power deficiency is speed dependent and linear, with a weak pressure dependency, and at 820 C, the power deficiency is speed and pressure dependent. The effects of buoyancy and nozzle spray pattern on the heater temperature spread are investigated. The characterization of the oil pump and the operating cycle and temperature spread tests are proposed for further evaluation of the engine.

  4. Engineering optical properties of semiconductor metafilm superabsorbers

    NASA Astrophysics Data System (ADS)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  5. Band structure engineering in organic semiconductors.

    PubMed

    Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A; Kasemann, Daniel; Andrienko, Denis; Leo, Karl

    2016-06-17

    A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors. PMID:27313043

  6. Mod II Stirling engine overviews

    NASA Technical Reports Server (NTRS)

    Farrell, Roger A.

    1988-01-01

    The Mod II engine is a second-generation automotive Stirling engine (ASE) optimized for part-power operation. It has been designed specifically to meet the fuel economy and exhaust emissions objectives of the ASE development program. The design, test experience, performance, and comparison of data to analytical performance estimates of the Mod II engine to date are reviewed. Estimates of Mod II performance in its final configuration are also given.

  7. Atomic-Scale Characterization of II-VI Compound Semiconductors

    NASA Astrophysics Data System (ADS)

    Smith, David J.

    2013-11-01

    Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

  8. Aircraft engines. II

    SciTech Connect

    Smith, M.G. Jr.

    1988-01-01

    An account is given of the design features and prospective performance gains of ultrahigh bypass subsonic propulsion configurations and various candidate supersonic commercial aircraft powerplants. The supersonic types, whose enhanced thermodynamic cycle efficiency is considered critical to the economic viability of a second-generation SST, are the variable-cycle engine, the variable stream control engine, the turbine-bypass engine, and the supersonic-throughflow fan. Also noted is the turboramjet concept, which will be applicable to hypersonic aircraft whose airframe structure materials can withstand the severe aerothermodynamic conditions of this flight regime.

  9. Semiconductor Chemical Reactor Engineering and Photovoltaic Unit Operations.

    ERIC Educational Resources Information Center

    Russell, T. W. F.

    1985-01-01

    Discusses the nature of semiconductor chemical reactor engineering, illustrating the application of this engineering with research in physical vapor deposition of cadmium sulfide at both the laboratory and unit operations scale and chemical vapor deposition of amorphous silicon at the laboratory scale. (JN)

  10. Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

    DOEpatents

    Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

    2001-01-01

    A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

  11. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    SciTech Connect

    Moghadam, Mohammadreza J.; Ahmadi-Majlan, K.; Shen, Xuan; Droubay, Timothy C.; Bowden, Mark E.; Chrysler, M.; Su, Dong; Chambers, Scott A.; Ngai, Joseph

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is controlling the manner in which their bands align at interfaces. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO3 and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural, electrical and photoemission characterization of SrZrxTi1-xO33-Ge heterojunctions for x = 0.2 to 0.75 and demonstrate the band offset can be tuned from type-II to type-I. The type-I band offset provides a platform to integrate the dielectric, ferroelectric and ferromagnetic functionalities of oxides with semiconducting devices.

  12. FTIR Spectroscopic Characterization Of II-VI Semiconductors

    NASA Technical Reports Server (NTRS)

    Perry, G. L. E.; Szofran, F. R.

    1991-01-01

    Combination of commercial Fourier-transform infrared (FTIR) spectrometer with computer and special-purpose software constitutes highly automated facility for acquisition and processing of infrared transmission or reflection spectral image data. Intended principally to acquire transmission spectra of some compounds of elements in groups II and VI of periodic table. System used to characterize specimens of II/VI alloy semiconductors grown by directional solidification and quenching. Transmission-edge maps helpful in studies of flows, gradients of temperature, and coefficients of diffusion in solidifying melts. Data acquired by system include optical characteristics, and they both verify and complement data obtained by such other techniques as measurements of density and x-ray-dispersion analysis.

  13. AX centers in II-VI semiconductors: Hybrid functional calculations

    NASA Astrophysics Data System (ADS)

    Biswas, Koushik; Du, Mao-Hua

    2012-02-01

    Group-V acceptors should be efficient hole producers in II-VI compounds as in ZnTe. However, good p-type conductivity remains elusive, for example in ZnO and ZnS. With regard to this low doping efficiency, we will discuss the dopant self-compensation in II-VI semiconductors through the formation of the AX center. These are acceptor-induced defect that acts as a donor to compensate the acceptor itself. We show that the artificially high valence band maximum in Local density approximation and Generalized gradient approximation calculations can lead to incorrect prediction on the stability of the AX center in these semiconductors. The hybrid functional calculations that correct the band gap, significantly stabilize the AX centers for selected group-V acceptor dopants in ZnO, ZnS, and ZnSe. The results on AX centers obtained by hybrid functional calculations agree well with the experimentally observed doping phenomena in ZnS and ZnSe.[1] [1] Koushik Biswas and Mao-Hua Du, Applied Physics Letters 98, 181913 (2011).

  14. Semiconductor nanomembranes: a platform for new properties via strain engineering

    PubMed Central

    2012-01-01

    New phenomena arise in single-crystal semiconductors when these are fabricated in very thin sheets, with thickness at the nanometer scale. We review recent research on Si and Ge nanomembranes, including the use of elastic strain sharing, layer release, and transfer, that demonstrate new science and enable the fabrication of materials with unique properties. Strain engineering produces new strained forms of Si or Ge not possible in nature, new layered structures, defect-free SiGe sheets, and new electronic band structure and photonic properties. Through-membrane elastic interactions cause the double-sided ordering of epitaxially grown nanostressors on Si nanomembranes, resulting in a spatially and periodically varying strain field in the thin crystalline semiconductor sheet. The inherent influence of strain on the band structure creates band gap modulation, thereby creating effectively a single-element electronic superlattice. Conversely, large-enough externally applied strain can make Ge a direct-band gap semiconductor, giving promise for Group IV element light sources. PMID:23153167

  15. Quantum spin Hall effect in inverted type-II semiconductors.

    PubMed

    Liu, Chaoxing; Hughes, Taylor L; Qi, Xiao-Liang; Wang, Kang; Zhang, Shou-Cheng

    2008-06-13

    The quantum spin Hall (QSH) state is a topologically nontrivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells and in this Letter we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. The quantum well exhibits an "inverted" phase similar to HgTe/CdTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking are essential. Remarkably, the topological quantum phase transition between the conventional insulating state and the quantum spin Hall state can be continuously tuned by the gate voltage, enabling quantitative investigation of this novel phase transition. PMID:18643529

  16. Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

    DOEpatents

    Compaan, Alvin D.; Price, Kent J.; Ma, Xianda; Makhratchev, Konstantin

    2005-02-08

    A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.

  17. II-VI Semiconductor microstructures:from physics to optoelectronics

    NASA Astrophysics Data System (ADS)

    Pautrat, J. L.

    1994-12-01

    The tellurium compounds family displays many interesting features. The various compounds cover a very large range of bandgap energies from 0 (Cd{0.15}Hg0.85Te) to more than 3 eV (ZnTe : 2.4 eV ; MnTe : 3.2 eV ; MgTe : 3.5 eV). The lattice parameters of the various compounds are sometimes almost perfectly matched, as in the CdTe/CdxHg{1-x}Te case, or slightly enough mismatched for a coherent epitaxy to be performed. Furthermore, good quality Cd{0.96}Zn{0.04}Te substrates are now available which allow to grow a large variety of microstructures using molecular beam epitaxy. The thickness control of the deposited layers allows to design and grow sophisticated beterostructures incorporating monolayer thick features. The direct band gap of these materials makes them well-suited to many optoelectronic applications in the infrared and visible range. A few examples of applications are described in more details : i) microtip semiconductor laser based on a cold microtip electron emitter for cathodic pumping of a CdTe/CdMnTe laser cavity ; ii) multiquantum well structures showing a marked excitonic absorption band at room temperature and the disappearance of this band when an electric field is applied to the structure. Application to self electrooptic and photorefractive devices ; iii) Bragg mirrors for the infrared. In addition to the usual semiconductor properties, the manganese compounds display interesting properties which can be useful in the field of magnetooptics.

  18. Monolayer II-VI semiconductors: A first-principles prediction

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Li, Xian-Bin; Chen, Nian-Ke; Xie, Sheng-Yi; Tian, Wei Quan; Chen, Yuanping; Xia, Hong; Zhang, S. B.; Sun, Hong-Bo

    2015-09-01

    A systematic study of 32 honeycomb monolayer II-VI semiconductors is carried out by first-principles methods. While none of the two-dimensional (2D) structures can be energetically stable, it appears that BeO, MgO, CaO, ZnO, CdO, CaS, SrS, SrSe, BaTe, and HgTe honeycomb monolayers have a good dynamic stability. The stability of the five oxides is consistent with the work published by Zhuang et al. [Appl. Phys. Lett. 103, 212102 (2013), 10.1063/1.4831972]. The rest of the compounds in the form of honeycomb are dynamically unstable, revealed by phonon calculations. In addition, according to the molecular dynamic (MD) simulation evolution from these unstable candidates, we also find two extra monolayers dynamically stable, which are tetragonal BaS [P 4 /n m m (129 ) ] and orthorhombic HgS [P 21/m (11 ) ] . The honeycomb monolayers exist in the form of either a planar perfect honeycomb or a low-buckled 2D layer, all of which possess a band gap and most of them are in the ultraviolet region. Interestingly, the dynamically stable SrSe has a gap near visible light, and displays exotic electronic properties with a flat top of the valence band, and hence has a strong spin polarization upon hole doping. The honeycomb HgTe has recently been reported to achieve a topological nontrivial phase under appropriate in-plane tensile strain and spin-orbital coupling (SOC) [J. Li et al., arXiv:1412.2528]. Some II-VI partners with less than 5 % lattice mismatch may be used to design novel 2D heterojunction devices. If synthesized, potential applications of these 2D II-VI families could include optoelectronics, spintronics, and strong correlated electronics.

  19. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    NASA Astrophysics Data System (ADS)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  20. Magnetoexcitons in type-II semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Fuster, Gonzalo; Barticevic, Zdenka; Pacheco, Monica; Oliveira, Luiz E.

    2004-03-01

    We present a theoretical investigation of excitons in type-II semiconductor quantum dots (QD). In these systems the confinement of electrons inside the QD and the hole outside the QD produces a ring-like structure [1-2]. Recently, Ribeiro et al [3], in a magnetophotoluminescence study of type-II InP/GaAs self-assembled quantum dots, observed Aharonov-Bohm-type oscillations characteristic of the ring topology for neutral excitons. Using a simple model they have derived the groundstate hole energy as a function of the magnetic field, and obtained values for the ring parameters which are in good agreement with the measured values. However, some of the features observed experimentally, in the photoluminescence intensity, can not be well explained under that approach. In this work we present a more realistic model which considers the finite width of the ring and the electron-hole interaction included via a perturbative approach. The calculations are performed within the oneparticle formalism using the effective mass approximation. The confinement potential for electrons is modelled as the superposition of a quantum well potential along the axial direction, and a parabolic lateral confinement potential. The energies for the hole in the ring plane are calculated using the method of reference [4]. Theoretical calculations are in good agreement with the experimental results of reference [3] provided that excitonic effects are properly taken into account. References 1. A.O. Govorov et al., Physica E 13 , 297 (2002). 2. K. L. Janssens et al. Phys. Rev B64, 155324 (2001), and Phys. Rev. B66, 075314 (2002). 3. E. Ribeiro, G. Medeiros-Ribeiro, and W.Carvalho Jr., and A.O. Govorov, condmat/0304092 (2003). 4. Z. Barticevic, G. Fuster, and M. Pacheco,Phys. Rev. B 65, 193307 (2002).

  1. Quantum Spin Hall Effect in Inverted Type II Semiconductors

    SciTech Connect

    Liu, Chaoxing; Hughes, Taylor L.; Qi, Xiao-Liang; Wang, Kang; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure exhibits an 'inverted' phase similar to CdTe/HgTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking and inter-layer charge transfer are essential. By standard self-consistent calculations, we show that the QSH state persists when these corrections are included, and a quantum phase transition between the normal insulator and the QSH phase can be electrically tuned by the gate voltage.

  2. Close-spaced vapor transport of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Perrier, Gerard

    1991-12-01

    The close spaced vapor transport (CSVT) is an efficient and cost-effective technique that allows the growth of polycrystalline as well as epitaxial thin layers of semiconductors. It has been applied to II-VI materials, especially to zinc and cadmium chalcogenides. A summary table including the deposition parameters, i.e., the nature of the ambient gas, the temperature of the source, the temperature difference between source and substrate, and the values of the growth rates measured on various substrates is presented for ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. Experimental results concerning the growth of ZnSe on GaAs substrates are also reported. The CSVT system uses an Ar atmosphere and the working temperature is ca. 825 degree(s)C. The temperatures of source and substrate are measured during deposition and growth rates of the ZnSe films are studied as a function of the reciprocal temperature of the substrate surface for GaAs and quartz (inert) substrates. The measured values of the growth rate are compared to the theoretical ones given by the reaction-limited model and the diffusion-limited model. The validity of the models is discussed in terms of the nature of the molecules participating in the transport.

  3. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    SciTech Connect

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We present structural and electrical characterization of SrZrxTi1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.

  4. Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

    DOE PAGESBeta

    Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; Droubay, Timothy; Bowden, Mark; Chrysler, Matthew; Su, Dong; Chambers, Scott A.; Ngai, Joseph H.

    2015-02-09

    The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZrxTi1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x. We presentmore » structural and electrical characterization of SrZrxTi1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

  5. Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2012-01-01

    "Super-hetero-epitaxial" combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a "Tri-Unity" system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF.sub.3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

  6. Nanophase Engineering of Organic Semiconductor-based Solar Cells

    SciTech Connect

    Shao, Ming; Keum, Jong Kahk; Geohegan, David B; Xiao, Kai

    2015-01-01

    Organic photovoltaics are promising low-cost, easily-processable energy sources of the future, and are the subject of current academic and industrial interest. In order to achieve the envisioned device efficiencies to surpass commercialization target values, several challenges must be met: (1) to design and synthesize conjugated molecules with low optical bandgaps and optimized electronic energy levels, (2) optimization the morphology of donor/acceptor interpenetrating networks by controlling nanoscale phase separation and self-assembly, and (3) precise tuning of the active layer/electrode interfaces and donor/acceptor interfaces for optimized charge transfer. Here, we focus on recent advances in: (i) synthetic strategies for low-bandgap conjugated polymers and novel fullerene acceptors, (ii) processing to tune film morphologies by solvent annealing, thermal annealing, and the use of solvent additives and compatibilizers, and (iii) engineering of active layer/electrode interfaces and donor/acceptor interfaces with self-assembled monolayer dipoles.

  7. PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

    NASA Astrophysics Data System (ADS)

    Nötzel, Richard

    2009-07-01

    This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

  8. Photophysical Properties of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Gong, Ke

    As it is well known, semiconductor nanocrystals (also called quantum dots, QDs) are being actively pursued for use in many different types of luminescent optical materials. These materials include the active media for luminescence downconversion in artificial lighting, lasers, luminescent solar concentrators and many other applications. Chapter 1 gives general introduction of QDs, which describe the basic physical properties and optical properties. Based on the experimental spectroscopic study, a semiquantitative method-effective mass model is employed to give theoretical prediction and guide. The following chapters will talks about several topics respectively. A predictive understanding of the radiative lifetimes is therefore a starting point for the understanding of the use of QDs for these applications. Absorption intensities and radiative lifetimes are fundamental properties of any luminescent material. Meantime, achievement of high efficiency with high working temperature and heterostructure fabrication with manipulation of lattice strain are not easy and need systematic investigation. To make accurate connections between extinction coefficients and radiative recombination rates, chapter 2 will consider three closely related aspects of the size dependent spectroscopy of II-VI QDs. First, it will consider the existing literature on cadmium selenide (CdSe) QD absorption spectra and extinction coefficients. From these results and fine structure considerations Boltzmann weighted radiative lifetimes are calculated. These lifetimes are compared to values measured on very high quality CdSe and CdSe coated with zinc selenide (ZnSe) shells. Second, analogous literature data are analyzed for cadmium telluride (CdTe) nanocrystals and compared to lifetimes measured for very high quality QDs. Furthermore, studies of the absorption and excitation spectra and measured radiative lifetimes for CdTe/CdSe Type-II core/shell QDs are reported. These results are also analyzed in

  9. The Impedance Response of Semiconductors: An Electrochemical Engineering Perspective.

    ERIC Educational Resources Information Center

    Orazem, Mark E.

    1990-01-01

    Shows that the principles learned in the study of mass transport, thermodynamics, and kinetics associated with electrochemical systems can be applied to the transport and reaction processes taking place within a semiconductor. Describes impedance techniques and provides several graphs illustrating impedance data for diverse circuit systems. (YP)

  10. Microwave-assisted synthesis of II-VI semiconductor micro-and nanoparticles towards sensor applications

    NASA Astrophysics Data System (ADS)

    Majithia, Ravish Yogesh

    Engineering particles at the nanoscale demands a high degree of control over process parameters during synthesis. For nanocrystal synthesis, solution-based techniques typically include application of external convective heat. This process often leads to slow heating and allows decomposition of reagents or products over time. Microwave-assisted heating provides faster, localized heating at the molecular level with near instantaneous control over reaction parameters. In this work, microwave-assisted heating has been applied for the synthesis of II-VI semiconductor nanocrystals namely, ZnO nanopods and CdX (X = Se, Te) quantum dots (QDs). Based on factors such as size, surface functionality and charge, optical properties of such nanomaterials can be tuned for application as sensors. ZnO is a direct bandgap semiconductor (3.37 eV) with a large exciton binding energy (60 meV) leading to photoluminescence (PL) at room temperature. A microwave-assisted hydrothermal approach allows the use of sub-5 nm ZnO zero-dimensional nanoparticles as seeds for generation of multi-legged quasi one-dimensional nanopods via heterogeneous nucleation. ZnO nanopods, having individual leg diameters of 13-15 nm and growing along the [0001] direction, can be synthesized in as little as 20 minutes. ZnO nanopods exhibit a broad defect-related PL spanning the visible range with a peak at ~615 nm. Optical sensing based on changes in intensity of the defect PL in response to external environment (e.g., humidity) is demonstrated in this work. Microwave-assisted synthesis was also used for organometallic synthesis of CdX(ZnS) (X = Se, Te) core(shell) QDs. Optical emission of these QDs can be altered based on their size and can be tailored to specific wavelengths. Further, QDs were incorporated in Enhanced Green-Fluorescent Protein -- Ultrabithorax (EGFP-Ubx) fusion protein for the generation of macroscale composite protein fibers via hierarchal self-assembly. Variations in EGFP- Ubx˙QD composite

  11. Surface Bonding Effects in Compound Semiconductor Nanoparticles: II

    SciTech Connect

    Helen H. Farrell

    2008-07-01

    Small nanoparticles have a large proportion of their atoms either at or near the surface, and those in clusters are essentially all on the surface. As a consequence, the details of the surface structure are of paramount importance in governing the overall stability of the particle. Just as with bulk materials, factors that determine this stability include “bulk” structure, surface reconstruction, charge balance and hybridization, ionicity, strain, stoichiometry, and the presence of adsorbates. Needless to say, many of these factors, such as charge balance, hybridization and strain, are interdependent. These factors all contribute to the overall binding energy of clusters and small nanoparticles and play a role in determining the deviations from an inverse size dependence that we have previously reported for compound semiconductor materials. Using first-principles density functional theory calculations, we have explored how these factors influence particle stability under a variety of conditions.

  12. Diluted II-VI oxide semiconductors with multiple band gaps.

    PubMed

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%. PMID:14683137

  13. Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

    PubMed

    Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

    2016-08-01

    Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic. PMID:27403886

  14. Quantum band engineering of nitride semiconductors for infrared lasers

    NASA Astrophysics Data System (ADS)

    Malis, O.; Edmunds, C.; Li, D.; Shao, J.; Gardner, G.; Li, W.; Fay, P.; Manfra, M. J.

    2014-02-01

    The III-nitride semiconductors have been proposed as candidate materials for new quantum cascade lasers in the nearinfrared (1.5-3 μm), and far-infrared (30-60 μm), due to the large conduction-band offset between GaN and Alcontaining alloys (>1 eV), and the large longitudinal optical (LO) phonon energy (90 meV), respectively. The challenges of III-nitride intersubband devices are twofold: material and design related. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. Moreover, the III-N materials exhibit built-in polarization fields that complicate the design of intersubband lasers. This paper presents recent results on c-plane nitride resonant-tunneling diodes that are important for the prospects of farinfrared nitride lasers. We also report near-infrared absorption and photocurrent measurements in nonpolar (m-plane) AlGaN/GaN superlattices.

  15. Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon.

    PubMed

    Averyanov, Dmitry V; Karateeva, Christina G; Karateev, Igor A; Tokmachev, Andrey M; Vasiliev, Alexander L; Zolotarev, Sergey I; Likhachev, Igor A; Storchak, Vyacheslav G

    2016-01-01

    Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

  16. Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

    PubMed Central

    2014-01-01

    Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

  17. Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

    2016-01-01

    Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

  18. Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

    NASA Astrophysics Data System (ADS)

    Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

    2016-03-01

    Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics.

  19. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    PubMed

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-01

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics. PMID:26593874

  20. Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua; Sha, Yi-Gao

    1995-01-01

    The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

  1. Phase transitions in Group III-V and II-VI semiconductors at high pressure

    NASA Technical Reports Server (NTRS)

    Yu, S. C.; Liu, C. Y.; Spain, I. L.; Skelton, E. F.

    1979-01-01

    The structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.

  2. Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

    2003-01-01

    Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

  3. Removal of GaAs growth substrates from II-VI semiconductor heterostructures

    NASA Astrophysics Data System (ADS)

    Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

    2014-04-01

    We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

  4. Electronic properties of electron and hole in type-II semiconductor nano-heterostructures

    NASA Astrophysics Data System (ADS)

    Rahul, K. Suseel; Souparnika, C.; Salini, K.; Mathew, Vincent

    2016-05-01

    In this project, we record the orbitals of electron and hole in type-II (CdTe/CdSe/CdTe/CdSe) semiconductor nanocrystal using effective mass approximation. In type-II the band edges of both valance and conduction band are higher than that of shell. So the electron and hole get confined in different layers of the hetero-structure. The energy eigen values and eigen functions are calculated by solving Schrodinger equation using finite difference matrix method. Based on this we investigate the effect of shell thickness and well width on energy and probability distribution of ground state (1s) and few excited states (1p,1d,etc). Our results predict that, type-II quantum dots have significant importance in photovoltaic applications.

  5. Engineering of chimeric class II polyhydroxyalkanoate synthases.

    PubMed

    Niamsiri, Nuttawee; Delamarre, Soazig C; Kim, Young-Rok; Batt, Carl A

    2004-11-01

    PHA synthase is a key enzyme involved in the biosynthesis of polyhydroxyalkanoates (PHAs). Using a combinatorial genetic strategy to create unique chimeric class II PHA synthases, we have obtained a number of novel chimeras which display improved catalytic properties. To engineer the chimeric PHA synthases, we constructed a synthetic phaC gene from Pseudomonas oleovorans (phaC1Po) that was devoid of an internal 540-bp fragment. Randomly amplified PCR products (created with primers based on conserved phaC sequences flanking the deleted internal fragment) were generated using genomic DNA isolated from soil and were substituted for the 540-bp internal region. The chimeric genes were expressed in a PHA-negative strain of Ralstonia eutropha, PHB(-)4 (DSM 541). Out of 1,478 recombinant clones screened for PHA production, we obtained five different chimeric phaC1Po genes that produced more PHA than the native phaC1Po. Chimeras S1-71, S4-8, S5-58, S3-69, and S3-44 exhibited 1.3-, 1.4-, 2.0-, 2.1-, and 3.0-fold-increased levels of in vivo activity, respectively. All of the mutants mediated the synthesis of PHAs with a slightly increased molar fraction of 3-hydroxyoctanoate; however, the weight-average molecular weights (Mw) of the PHAs in all cases remained almost the same. Based upon DNA sequence analyses, the various phaC fragments appear to have originated from Pseudomonas fluorescens and Pseudomonas aureofaciens. The amino acid sequence analyses showed that the chimeric proteins had 17 to 20 amino acid differences from the wild-type phaC1Po, and these differences were clustered in the same positions in the five chimeric clones. A threading model of PhaC1Po, developed based on homology of the enzyme to the Burkholderia glumae lipase, suggested that the amino acid substitutions found in the active chimeras were located mostly on the protein model surface. Thus, our combinatorial genetic engineering strategy proved to be broadly useful for improving the catalytic

  6. Characterization of β-FeSi II films as a novel solar cell semiconductor

    NASA Astrophysics Data System (ADS)

    Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Otogawa, Naotaka; Abe, Hironori; Nakayama, Yasuhiko; Makita, Yunosuke

    2006-04-01

    β-FeSi II is an attractive semiconductor owing to its extremely high optical absorption coefficient (α>10 5 cm -1), and is expected to be an ideal semiconductor as a thin film solar cell. For solar cell use, to prepare high quality β-FeSi II films holding a desired Fe/Si ratio, we chose two methods; one is a molecular beam epitaxy (MBE) method in which Fe and Si were evaporated by using normal Knudsen cells, and occasionally by e-gun for Si. Another one is the facing-target sputtering (FTS) method in which deposition of β-FeSi II films is made on Si substrate that is placed out of gas plasma cloud. In both methods to obtain β-FeSi II films with a tuned Fe/Si ratio, Fe/Si super lattice was fabricated by varying Fe and Si deposition thickness. Results showed significant in- and out-diffusion of host Fe and Si atoms at the interface of Si substrates into β-FeSi II layers. It was experimentally demonstrated that this diffusion can be suppressed by the formation of template layer between the epitaxial β-FeSi II layer and the substrate. The template layer was prepared by reactive deposition epitaxy (RDE) method. By fixing the Fe/Si ratio as precisely as possible at 1/2, systematic doping experiments of acceptor (Ga and B) and donor (As) impurities into β-FeSi II were carried out. Systematical changes of electron and hole carrier concentration in these samples along variation of incorporated impurities were observed through Hall effect measurements. Residual carrier concentrations can be ascribed to not only the remaining undesired impurities contained in source materials but also to a variety of point defects mainly produced by the uncontrolled stoichiometry. A preliminary structure of n-β-FeSi II/p-Si used as a solar cell indicated a conversion efficiency of 3.7%.

  7. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Final technical report

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-05-01

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox sytems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and approx. AM1 light intensity. With higher quality single crystal CdSe, stable sort-circuit photocurrents of 15 to 17 mA/cm/sup 2/ and an open circuit voltage of 0.7 V (tungsten-halogen illumination) have been obtained, corresponding to a conversion efficiency of about 5%. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX photoanodes in acetonitrile solution has been completed. For the first time, a conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. This could represent a breakthrough in the use of hydrophobic films to protect semiconductor photoanodes from dissolution/degradation. Mixed CdSe-CdTe solid solution electrodes were found to exhibit a minimum in both the flatband potential and the bandgap at approx. 65% CdTe. Both of these shifts would have a detrimental effect on the solar conversion efficiency.

  8. Fracto-mechanoluminescence induced by impulsive deformation of II-VI semiconductors.

    PubMed

    Tiwari, Ratnesh; Dubey, Vikas; Ramrakhiani, Meera; Chandra, B P

    2015-09-01

    When II-VI semiconductors are fractured, initially the mechanoluminescence (ML) intensity increases with time, attains a maximum value Im at a time tm, at which the fracture is completed. After tm, the ML intensity decreases with time, Im increase linearly with the impact velocity v0 and IT initially increase linearly with v0 and then it attains a saturation value for a higher value of v0. For photoluminescence, the temperature dependence comes mainly from luminescence efficiency, ηo; however, for the ML excitation, there is an additional factor, rt dependent on temperature. During fracture, charged dislocations moving near the tip of moving cracks produce intense electric field, causes band bending. Consequently, tunneling of electrons from filled electron traps to the conduction band takes place, whereby the radiative electron-hole recombination give rise to the luminescence. In the proposed mechanism, expressions are derived for the rise, the time tm corresponding to the ML intensity versus time curve, the ML intensity Im corresponding to the peak of ML intensity versus time curve, the total fracto-mechanoluminescence (FML) intensity IT, and fast and slow decay of FML intensity of II-VI semiconductors. The FML plays a significant role in understanding the processes involved in biological detection, earthquake lights and mine failure. PMID:25669489

  9. Orientation-patterned II-VI semiconductor waveguides for quasi-phasematched nonlinear optics

    NASA Astrophysics Data System (ADS)

    Angell, Marilyn Joy

    1999-10-01

    The ability to grow epitaxial layers of II-VI compound semiconductors on GaAs substrates, the transparency of these materials to a broad range of visible wavelengths, and their strong second order susceptibility suggest that these materials should be promising for efficient nonlinear frequency conversion by on-chip integration with III-V pump lasers. This work investigates the use of semiconductor microfabrication techniques to create II-VI waveguides with laterally-patterned crystal orientation for quasi-phasematched second harmonic generation. The fabrication of periodically-patterned <100>/<111> CdTe on <100> GaAs substrates, using epitaxial growth by metalorganic chemical vapor deposition and a lithographic patterning process, is demonstrated. This process is adapted to create ZnTe/ZnSe waveguides with periodic lateral patterning of the crystal orientation. The optical properties of planar waveguides with orientation-patterned ZnTe core layers are characterized. Second harmonic generation is measured, but does not appear to be quasi-phasematched at the test wavelength. High optical losses are observed in the patterned waveguides, and the mechanism of the loss is investigated using X-ray diffractometry, atomic force microscopy, and angle-resolved scatterometry. These measurements suggest that the losses are primarily due to bulk defects in the <111>-oriented material. Waveguide patterning using <100>-oriented anti-phase domains, which have a single axis of crystal growth, is recommended in order to overcome this problem.

  10. Optical properties of II-VI semiconductor nanoclusters for use as phosphors

    NASA Astrophysics Data System (ADS)

    Wilcoxon, Jess P.; Newcomer, Paula

    2002-11-01

    The optical properties of both II-VI (direct gap) and type IV (indirect gap) nanosize semiconductors are significantly affected not only by their size, but by the nature of the chemical interface of the cluster with the embedding medium. This affects the light conversion efficiency and can alter the shape and position (i.e. the color) of the photoluminescence (PL). As the goal of our work is to embed nanoclusters into either organic or inorganic matrices for use as near UV, LED-excited phosphor thin films, understanding and controlling this interface is very important for preserving the high Q.E. of nanoclusters known for dilute solution conditions. We describe a room temperature synthesis of semiconductor nanoclusters which employs inexpensive, less toxic ionic precursors (metal salts), and simple coordinating solvents (e.g. tetrahydrofuran). This allows us to add passivating agents, ions, metal or semiconductor coatings to identical, highly dispersed bare clusters, post-synthesis. We can also increase the cluster size by heterogeneous growth on the seed nanoclusters. One of the most interesting observations for our II-VI nanomaterials is that both the absorbance excitonic features and the photoluminescence (PL) energy and intensity depend on the nature of the surface as well as the average size. In CdS, for example, the presence of electron traps (i.e Cd(II) sites) decreases the exciton absorbance peak amplitude but increases the PL nearly two-fold. Hole traps (i.e. S(II)) have the opposite effect. In the coordinating solvents used for the synthesis, the PL yield for d~2 nm, blue emitting CdSe clusters increases dramatically with sample age as the multiple absorbance features sharpen. Liquid chromatographic (LC) separation of the nanoclusters from other chemicals and different sized clusters is used to investigate the intrinsic optical properties of the purified clusters and identify which clusters are contributing most strongly to the PL. Both LC and dynamic

  11. Nanoscale engineering of a cellular interface with semiconductor nanoparticle films for photoelectric stimulation of neurons.

    PubMed

    Pappas, Todd C; Wickramanyake, W M Shan; Jan, Edward; Motamedi, Massoud; Brodwick, Malcolm; Kotov, Nicholas A

    2007-02-01

    The remarkable optical and electrical properties of nanostructured materials are considered now as a source for a variety of biomaterials, biosensing, and cell interface applications. In this study, we report the first example of hybrid bionanodevice where absorption of light by thin films of quantum confined semiconductor nanoparticles of HgTe produced by the layer-by-layer assembly stimulate adherent neural cells via a sequence of photochemical and charge-transfer reactions. We also demonstrate an example of nanoscale engineering of the material driven by biological functionalities. PMID:17298018

  12. Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering

    NASA Astrophysics Data System (ADS)

    Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2016-03-01

    Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT  =  0.5 at 570 K for BiTeI0.88Br0.12.

  13. Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering.

    PubMed

    Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

    2016-03-01

    Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT  =  0.5 at 570 K for BiTeI0.88Br0.12. PMID:26829207

  14. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G.; Wei, Su-Huai; Liu, Feng

    2015-09-01

    Developing practical approaches to effectively reduce the amount of deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this still remains a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for transition-metal dichalcogenides, such as MoSe2 and WSe2 , where anion vacancies are the most abundant defects that can induce deep levels, the deep levels can be effectively suppressed in Mo1 -xWx Se2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the band edge energies can be substantially tuned by the global alloy concentration, whereas the defect level is controlled locally by the preferred locations of Se vacancies around W atoms. Our findings illustrate a concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  15. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in Transition-Metal Dichalcogenides

    NASA Astrophysics Data System (ADS)

    Huang, Bing; Yoon, Mina; Sumpter, Bobby; Wei, Suhuai; Liu, Feng

    Developing practical approaches to effectively reduce the amount of deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this still remains a very challenging task. In this talk, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for transition-metal dichalcogenides, such as MoSe2 and WSe2, where anion vacancies are the most abundant defects that can induce deep levels, the deep levels can be effectively suppressed in MoWSe2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the band edge energies can be substantially tuned by the global alloy concentration, whereas the defect level is controlled locally by the preferred locations of Se vacancies around W atoms. Our findings illustrate a concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  16. Biochemical Engineering. Part II: Process Design

    ERIC Educational Resources Information Center

    Atkinson, B.

    1972-01-01

    Describes types of industrial techniques involving biochemical products, specifying the advantages and disadvantages of batch and continuous processes, and contrasting biochemical and chemical engineering. See SE 506 318 for Part I. (AL)

  17. Syntheses and applications of Mn-doped II-VI semiconductor nanocrystals.

    PubMed

    Yang, Heesun; Santra, Swadeshmukul; Holloway, Paul H

    2005-09-01

    Luminescent Mn-doped II-VI semiconductor nanocrystals have been intensively investigated over the last ten years. Several semiconductor host materials such as ZnS, CdS, and ZnSe have been used for Mn-doped nanocrystals with different synthetic routes and surface passivation. Beyond studies of their fundamental properties including photoluminescence and size, these luminescent nanocrystals have now been tested for practical applications such as electroluminescent displays and biological labeling agents (biomarkers). Here, we first review ZnS:Mn, CdS:Mn/ZnS core/shell, and ZnSe:Mn nanocrystal systems in terms of their synthetic chemistries and photoluminescent properties. Second, based on ZnS:Mn and CdS:Mn/ZnS core/shell nanocrystals as electroluminescent components, direct current electroluminescent devices having a hybrid organic/inorganic multilayer structure are reviewed. Highly luminescent and photostable CdS:Mn/ZnS nanocrystals can further be used as the luminescent biomarkers and some preliminary results are also discussed here. PMID:16193951

  18. Interfacial Engineering of Semiconductor-Superconductor Junctions for High Performance Micro-Coolers.

    PubMed

    Gunnarsson, D; Richardson-Bullock, J S; Prest, M J; Nguyen, H Q; Timofeev, A V; Shah, V A; Whall, T E; Parker, E H C; Leadley, D R; Myronov, M; Prunnila, M

    2015-01-01

    The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300 mK to below 100 mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour. PMID:26620423

  19. Interfacial Engineering of Semiconductor-Superconductor Junctions for High Performance Micro-Coolers

    NASA Astrophysics Data System (ADS)

    Gunnarsson, D.; Richardson-Bullock, J. S.; Prest, M. J.; Nguyen, H. Q.; Timofeev, A. V.; Shah, V. A.; Whall, T. E.; Parker, E. H. C.; Leadley, D. R.; Myronov, M.; Prunnila, M.

    2015-12-01

    The control of electronic and thermal transport through material interfaces is crucial for numerous micro and nanoelectronics applications and quantum devices. Here we report on the engineering of the electro-thermal properties of semiconductor-superconductor (Sm-S) electronic cooler junctions by a nanoscale insulating tunnel barrier introduced between the Sm and S electrodes. Unexpectedly, such an interface barrier does not increase the junction resistance but strongly reduces the detrimental sub-gap leakage current. These features are key to achieving high cooling power tunnel junction refrigerators, and we demonstrate unparalleled performance in silicon-based Sm-S electron cooler devices with orders of magnitudes improvement in the cooling power in comparison to previous works. By adapting the junctions in strain-engineered silicon coolers we also demonstrate efficient electron temperature reduction from 300 mK to below 100 mK. Investigations on junctions with different interface quality indicate that the previously unexplained sub-gap leakage current is strongly influenced by the Sm-S interface states. These states often dictate the junction electrical resistance through the well-known Fermi level pinning effect and, therefore, superconductivity could be generally used to probe and optimize metal-semiconductor contact behaviour.

  20. Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Vogel, Dirk; Krüger, Peter; Pollmann, Johannes

    1996-08-01

    We report the construction of pseudopotentials that incorporate self-interaction corrections and electronic relaxation in an approximate but very efficient, physically well-founded, and mathematically well-defined way. These potentials are particularly useful for II-VI compounds which are distinguished by their highly localized and strongly bound cationic semicore d electrons. Self-interaction corrections to the local-density approximation (LDA) of density-functional theory are accounted for in the solids to a significant degree by constructing appropriate self-interaction-corrected (SIC) pseudopotentials that take atomic SIC contributions into account. In this way translational symmetry of the Hamiltonian is preserved. Without increasing the complexity of the numerical calculations we approximately account, in addition, for electronic relaxation in the solids by incorporating into our pseudopotentials relevant relaxation in the involved atoms. By this construction we arrive at very useful self-interaction and relaxation-corrected pseudopotentials and effective one-particle Hamiltonians which constitute the basis for ab initio LDA calculations yielding significant improvements in electronic properties of II-VI compound semiconductors and their surfaces. The procedure is computationally not more involved than any standard LDA calculation and, nevertheless, overcomes to a large extent the well-known shortcomings of ``state of the art'' LDA calculations employing standard pseudopotentials. Our results for electronic and structural properties of II-VI compounds agree with a whole body of experimental data.

  1. The Effect of World War II on Women in Engineering

    NASA Astrophysics Data System (ADS)

    Barker, Anne M.

    The field of engineering has been one of the most difficult for women to enter. Even with an increase in the proportion of women in the engineering workforce from 0.3% before the 1970s to 9.5% in 1999, women are still seriously underrepresented. This article examines the history of women in engineering in the United States during World War II. Women were actively recruited as engineering aides by the federal government, which saw them as a temporary substitute for men who were in the military. Yet this crisis did not break down the barriers to and prejudices against women in engineering, nor did it give them a real opportunity to become professional engineers equal to men. After the war, calls for a return to normalcy were used to reestablish social norms, which kept women at home and reserved desirable places in the workforce, including in engineering, for men.

  2. Characterization of convection related defects in II-VI compound semiconductors

    NASA Technical Reports Server (NTRS)

    Witt, August F.

    1993-01-01

    The research carried out under NAG8-913, 'Characterization of Convection Related Defects in II-VI Compound Semiconductors', was aimed at exploration of the potential of axial magnetic fields for melt stabilization when applied in Bridgman geometry to the growth of HgMnTe. The thrust of the work was directed at the experimental establishment of the limits of magnetic melt stabilization during crystal growth and at the analytical verification of the effects of stabilization on critical materials properties. The data obtained indicate noticeable stabilization effects, particularly as far as the formation of microscopic compositional inhomogeneities is concerned. The effects of magnetic fields on precipitate formation are found to be minor. Magnetic field effects were investigated for both 'Bridgman' and 'travelling heater' geometries. The research was conducted during the period from May 22 to September 30, 1992.

  3. Multi-band Bloch equations and gain spectra of highly excited II-VI semiconductor quantum wells

    SciTech Connect

    Girndt, A.; Jahnke, F.; Knorr, A.; Koch, S.W.; Chow, W.W.

    1997-04-21

    Quasi-equilibrium excitation dependent optical probe spectra of II-VI semiconductor quantum wells at room temperature are investigated within the framework of multi-band semiconductor Bloch equations. The calculations include correlation effects beyond the Hartree-Fock level which describe dephasing, interband Coulomb correlations and band-gap renormalization in second Born approximation. In addition to the carrier-Coulomb interaction, the influence of carrier-phonon scattering and inhomogeneous broadening is considered. The explicit calculation of single particle properties like band structure and dipole matrix elements using k {center_dot} p theory makes it possible to investigate various II-VI material combinations. Numerical results are presented for CdZnSe/ZnSe and CdZnSe/MnZnSSe semiconductor quantum-well systems.

  4. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

    DOEpatents

    McCandless, Brian E.

    2001-06-26

    An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

  5. Simulations of Liquid III-V and II-VI Semiconductors: Semiconducting versus Metallic Behavior.

    NASA Astrophysics Data System (ADS)

    Godlevsky, V.

    2000-03-01

    All III-V group semiconductors exhibit metallic behavior when melted. The coordination number of these materials changes from 4 in the bulk to ~ 6 in the liquid phase. With the increase of the coordination number and compositional disorder common to liquid III-V semiconductors, the covalent bonds of these materials are predominantly replaced by metallic bonds. Electron delocalization and high atomic randomization result in a large entropy change during the solidarrowliquid transition. Unlike III-V compounds, a number of II-VI semiconductors (e.g. CdTe, ZnTe and HgS) experience a semiconductorarrowsemiconductor transition upon melting. These compounds retain their fourfold coordination in the liquid phase. In our work, we perform ab initio simulations of liquid GaAs (l-GaAs) and CdTe (l-CdTe), as representatives of III-V and II-VI materials.(V. Godlevsky, J. Derby, and J.R. Chelikowsky, Phys. Rev. Lett. 81), 4959 (1998) As opposed to the more close-packed l-GaAs, l-CdTe has an open fourfold structure. Besides the coordination number, l-CdTe also retains some of its crystalline compositional features (e.g. there are fewer ``wrong'' bond defects than in l-GaAs). In l-CdTe, the density of states has a dip at the Fermi level indicating the semiconducting character of electrical conductivity in this material. The d.c. conductivity in l-CdTe is by two orders of magnitude lower than that in l-GaAs. The small change in the structural order and electron delocalization is in good agreement with the small entropy change observed experimentally during the melting of CdTe. As the temperature increases further, l-CdTe undergoes a fourfold-sixfold transition accompanied by the disappearing of band gap. The d.c. conductivity of sixfold coordinated l-CdTe is by an order of magnitude larger than the d.c. conductivity of fourfold coordinated l-CdTe.(V. Godlevsky, M. Jain, J. Derby, and J.R. Chelikowsky, Phys. Rev. B, 60), 8640 (1999)

  6. Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

    NASA Technical Reports Server (NTRS)

    Su, Ching-Hua

    1997-01-01

    The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

  7. Crystal engineering of dual channel p/n organic semiconductors by complementary hydrogen bonding.

    PubMed

    Black, Hayden T; Perepichka, Dmitrii F

    2014-02-17

    The supramolecular arrangement of organic semiconductors in the solid state is as critical for their device properties as the molecular structure, but is much more difficult to control. To enable supramolecular design of semiconducting materials, we introduced dipyrrolopyridine as a new donor semiconductor capable of complementary hydogen bonding with naphthalenediimide acceptors. Through a combination of solution, crystallographic, and device studies, we show that the self-assembly driven by H bonding a) modulates the charge-transfer interactions between the donor and acceptor, b) allows for precise control over the solid-state packing, and c) leads to a combination of the charge-transport properties of the individual components. The predictive power of this approach was demonstrated in the synthesis of three new coassembled materials which show both hole and electron transport in single-crystal field-effect transistors. These studies provide a foundation for advanced solid-state engineering in organic electronics, capitalizing on the complementary H bonding. PMID:24500891

  8. Developing Spectroscopic Ellipsometry to Study II-Vi and Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kim, Young-Dong

    We have constructed a rotating analyzer spectroscopic ellipsometer (RAE) to study effects of magnetic and nonmagnetic doping on the E_1 and E _1 + Delta_1 band gap energies in ZnSe-based II-VI semiconductors. To remove the natural surface oxide overlayer which distorts the intrinsic dielectric response of the sample, a chemical etching technique using dilute NH_4OH solution was developed. The successful removal of the oxide overlayer on ZnSe was confirmed via the XPS technique. For diluted magnetic semiconductors (DMS), we found that the E_1 and E _1 + Delta_1 band gap energies increase with x for Zn_{1-x}Fe _{x}Se and Zn_ {1-x}Co_{x}Se, and decrease with x for Zn_{1-x} Mn_{x}Se. An sp -d direct exchange interaction model which explained the Gamma-point band gap energy of Zn _{1-x}Mn_ {x}Se was applied. The calculated band gap energies at the L-point are only consistent with Zn _{1-x}Mn_ {x}Se data. We showed that an sp-d hybridization model, which includes the location of the energy levels of the magnetic impurity d-levels can account for the concentration dependence of E_1 and E _1 + Delta_1 band gap energies of all three materials. For Zn_{x}Cd _{1-x}Se systems, all spectral features of CdSe were identified as E_0, E_0 + Delta_0, E_1, E_1 + Delta_1, E_2, and E _sp{0}{'} threshold energies from band structure calculations using a nonlocal empirical pseudopotential method. Many-body effect has to be included in the calculation of the dielectric function of CdSe to obtain good agreement with the measured spectrum. Concentration dependent spin-orbit splitting band gap Delta _1(x) is well explained by the statistical fluctuation of the alloy composition.

  9. Exciton Kinetics in Strained II-Vi Semiconductor Multiple Quantum Wells.

    NASA Astrophysics Data System (ADS)

    Hefetz, Yaron

    1987-09-01

    Two groups of wide gap II-VI semiconductor superlattices based on ZnSe/Zn(,1-x)Mn(,x)Se and CdTe/ZnTe were investigated using CW and time-resolved photoluminescence, excitation, reflectance, and photomodulated reflectance spectroscopy at various temperatures and under an external magnetic field. All these lattice mismatch strained layer structures were grown by MBE technique and exhibit strong excitonic photoluminescence at low temperatures. By studying the dynamics of the exciton recombination processes, the role of strain, quantum confinement and localization effects were revealed. In the CdTe/ZnTc system where the lattice mismatch is (DELTA)a/a (TURNEQ) 6% the inhomogeneously broadened ((TURN)40 mev) luminescence line is governed by excitonic localization in well width fluctuations. Exchange interactions of the carriers with the Mn('++) ions in the dilute magnetic semiconductor Zn(,1-x)Mn(,x)Se in thin film and the barrier of the MQW structures influence their optical behavior in an exernal magnetic field. "Giant" Zeeman splittings of up to (TURN)10 mev/Tesla were measured in samples with moderate Mn concentration (x = .23). Antiferromagnetic interaction reduces these splittings in samples with higher Mn concentrations. In observing the time evolution of the carrier in Zn(,1-x)Mn(,x)Se MQW we found that the capture time of these carriers into the well is on the order of 1 psec but the last stages of thermalization, exciton formations and localization is (TURN)70 ps. The fast capture of electrons and holes into the quantum wells bypass the energy transfer into the Mn internal transition that is responsible to the efficient "yellow" luminescence in ZnMnSe mixed crystals.

  10. Record high hole mobility in polymer semiconductors via side-chain engineering.

    PubMed

    Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi

    2013-10-01

    Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V·s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short π-π stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature. PMID:24053786

  11. X-34 40K Fastrac II Engine Test

    NASA Technical Reports Server (NTRS)

    1997-01-01

    This is a photo of an X-34 40K Fastrac II duration test performed at the Marshall Space Flight Center test stand 116 (TS116) in June 1997. Engine ignition is started with Tea-Gas which makes the start burn green. The X-34 program was cancelled in 2001.

  12. Orbiter Atlantis (STS-110) Launch With New Block II Engines

    NASA Technical Reports Server (NTRS)

    2002-01-01

    Powered by three newly-enhanced Space Shuttle Maine Engines (SSMEs), called the Block II Maine Engines, the Space Shuttle Orbiter Atlantis lifted off from the Kennedy Space Center launch pad on April 8, 2002 for the STS-110 mission. The Block II Main Engines incorporate an improved fuel pump featuring fewer welds, a stronger integral shaft/disk, and more robust bearings, making them safer and more reliable, and potentially increasing the number of flights between major overhauls. NASA continues to increase the reliability and safety of Shuttle flights through a series of enhancements to the SSME. The engines were modified in 1988 and 1995. Developed in the 1970s and managed by the Space Shuttle Projects Office at the Marshall Space Flight Center, the SSME is the world's most sophisticated reusable rocket engine. The new turbopump made by Pratt and Whitney of West Palm Beach, Florida, was tested at NASA's Stennis Space Center in Mississippi. Boeing Rocketdyne in Canoga Park, California, manufactures the SSME. This image was extracted from engineering motion picture footage taken by a tracking camera.

  13. Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations

    NASA Astrophysics Data System (ADS)

    Chanier, T.; Virot, F.; Hayn, R.

    2009-05-01

    We have calculated the chemical trend of magnetic exchange parameters ( Jdd , Nα , and Nβ ) of Zn-based II-VI semiconductors ZnA ( A=O , S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the local spin-density approximation (LSDA)+U method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling Jdd between localized 3d spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band Nα are in good agreement with experiment as well. But the values for Nβ (coupling to doped holes in the valence band) indicate a crossover from weak coupling (for A=Te and Se) to strong coupling (for A=O ) and a localized hole state in ZnO:Mn. This hole localization explains the apparent discrepancy between photoemission and magneto-optical data for ZnO:Mn.

  14. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals.

    PubMed

    Zhai, You; Shim, Moonsub

    2015-12-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission. PMID:26510444

  15. Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals

    NASA Astrophysics Data System (ADS)

    Zhai, You; Shim, Moonsub

    2015-10-01

    Annealing or growth at high temperatures for an extended period of time is considered detrimental for most synthetic strategies for high-quality Mn-doped II-VI semiconductor nanocrystals. It can lead to the broadening of size distribution and, more importantly, to the loss of dopants. Here, we examine how ripening can be beneficial to doping in a simple "heat-up" approach, where high dopant concentrations can be achieved. We discuss the interplay of the loss of dopants, Ostwald ripening, and the clustering of Mn near the surface during nanocrystal growth. Smaller nanocrystals in a reaction batch, on average, exhibit higher undesirable band-edge photoluminescence (PL) and lower desirable dopant PL. The optimization of dopant loss and the removal of such smaller undesirable nanocrystals through Ostwald ripening along with surface exchange/passivation to remove Mn clustering lead to high Mn PL quantum yields (45 to 55 %) for ZnSxSe1-x, ZnS, CdS, and CdSxSe1-x host nanocrystals. These results provide an improved understanding of the doping process in a simple and potentially scalable synthetic strategy for achieving "pure" and bright dopant emission.

  16. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  17. Noncircular semiconductor nanorings of types I and II: Emission kinetics in the excitonic Aharonov-Bohm effect

    NASA Astrophysics Data System (ADS)

    Grochol, Michal; Zimmermann, Roland

    2007-11-01

    Transition energies and oscillator strengths of excitons in dependence on magnetic field are investigated in types I and II semiconductor nanorings. A slight deviation from circular (concentric) shape of the type II nanoring gives a better observability of the Aharonov-Bohm oscillations since the ground state is always optically active. Kinetic equations for the exciton occupation are solved with acoustic phonon scattering as the major relaxation process, and absorption and luminescence spectra are calculated, showing deviations from equilibrium. The presence of a nonradiative exciton decay leads to a quenching of the integrated photoluminescence with magnetic field.

  18. Elucidating the electron transport in semiconductors via Monte Carlo simulations: an inquiry-driven learning path for engineering undergraduates

    NASA Astrophysics Data System (ADS)

    Persano Adorno, Dominique; Pizzolato, Nicola; Fazio, Claudio

    2015-09-01

    Within the context of higher education for science or engineering undergraduates, we present an inquiry-driven learning path aimed at developing a more meaningful conceptual understanding of the electron dynamics in semiconductors in the presence of applied electric fields. The electron transport in a nondegenerate n-type indium phosphide bulk semiconductor is modelled using a multivalley Monte Carlo approach. The main characteristics of the electron dynamics are explored under different values of the driving electric field, lattice temperature and impurity density. Simulation results are presented by following a question-driven path of exploration, starting from the validation of the model and moving up to reasoned inquiries about the observed characteristics of electron dynamics. Our inquiry-driven learning path, based on numerical simulations, represents a viable example of how to integrate a traditional lecture-based teaching approach with effective learning strategies, providing science or engineering undergraduates with practical opportunities to enhance their comprehension of the physics governing the electron dynamics in semiconductors. Finally, we present a general discussion about the advantages and disadvantages of using an inquiry-based teaching approach within a learning environment based on semiconductor simulations.

  19. Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2016-03-15

    are the multinary chalcogenide semiconductors (MCSs), which include the ternary I-III-VI2 semiconductors (e.g., AgGaS2, CuInS2, and CuInSe2) and the quaternary I2-II-IV-VI4 semiconductors (e.g., Cu2ZnGeS4, Cu2ZnSnS4, and Ag2ZnSnS4). These inorganic compounds consist of environmentally benign elemental components, exhibit excellent light-harvesting properties, and possess band gap energies that are well-suited for solar photon absorption. Moreover, the band structures of these materials can be conveniently modified through alloying to boost their ability to harvest visible photons. In this Account, we provide a summary of recent research on the use of ternary I-III-VI2 and quaternary I2-II-IV-VI4 semiconductor nanostructures for light-induced photocatalytic applications, with focus on hydrogen production and organic dye degradation. We include a review of the solution-based methods that have been employed to prepare multinary chalcogenide semiconductor nanostructures of varying compositions, sizes, shapes, and crystal structures, which are factors that are known to have significant influence on the photocatalytic activity of semiconductor photocatalysts. The enhancement of photocatalytic performance through creation of hybrid nanoscale architectures is also presented. Lastly, views on the current challenges and future directions are discussed in the concluding section. PMID:26864703

  20. Exposure assessment and risk management of engineered nanoparticles: Investigation in semiconductor wafer processing

    NASA Astrophysics Data System (ADS)

    Shepard, Michele N.

    Engineered nanomaterials (ENMs) are currently used in hundreds of commercial products and industrial processes, with more applications being investigated. Nanomaterials have unique properties that differ from bulk materials. While these properties may enable technological advancements, the potential risks of ENMs to people and the environment are not yet fully understood. Certain low solubility nanoparticles are more toxic than their bulk material, such that existing occupational exposure limits may not be sufficiently protective for workers. Risk assessments are currently challenging due to gaps in data on the numerous emerging materials and applications as well as method uncertainties and limitations. Chemical mechanical planarization (CMP) processes with engineered nanoparticle abrasives are used for research and commercial manufacturing applications in the semiconductor and related industries. Despite growing use, no published studies addressed occupational exposures to nanoparticles associated with CMP or risk assessment and management practices for these scenarios. Additional studies are needed to evaluate potential sources of workplace exposure or emission, as well as to help test and refine assessment methods. This research was conducted to: identify the lifecycle stages and potential exposure sources for ENMs in CMP processes; characterize worker exposure; determine recommended engineering controls and compare risk assessment models. The study included workplace air and surface sampling and an evaluation of qualitative risk banding approaches. Exposure assessment results indicated the potential for worker contact with ENMs on workplace surfaces but did not identify nanoparticles readily dispersed in air during work tasks. Some increases in respirable particle concentrations were identified, but not consistently. Measured aerosol concentrations by number and mass were well below current reference values for poorly soluble low toxicity nanoparticles. From

  1. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers.

    PubMed

    Ghosh, S; Wang, W H; Mendoza, F M; Myers, R C; Li, X; Samarth, N; Gossard, A C; Awschalom, D D

    2006-04-01

    Semiconductor microcavities offer unique means of controlling light-matter interactions in confined geometries, resulting in a wide range of applications in optical communications and inspiring proposals for quantum information processing and computational schemes. Studies of spin dynamics in microcavities, a new and promising research field, have revealed effects such as polarization beats, stimulated spin scattering and giant Faraday rotation. Here, we study the electron spin dynamics in optically pumped GaAs microdisc lasers with quantum wells and interface-fluctuation quantum dots in the active region. In particular, we examine how the electron spin dynamics are modified by the stimulated emission in the discs, and observe an enhancement of the spin-coherence time when the optical excitation is in resonance with a high-quality (Q approximately 5,000) lasing mode. This resonant enhancement, contrary to expectations from the observed trend in the carrier-recombination time, is then manipulated by altering the cavity design and dimensions. In analogy with devices based on excitonic coherence, this ability to engineer coherent interactions between electron spins and photons may provide new pathways towards spin-dependent quantum optoelectronics. PMID:16565713

  2. Defect chemistry and defect engineering of TiO2-based semiconductors for solar energy conversion.

    PubMed

    Nowotny, Janusz; Alim, Mohammad Abdul; Bak, Tadeusz; Idris, Mohammad Asri; Ionescu, Mihail; Prince, Kathryn; Sahdan, Mohd Zainizan; Sopian, Kamaruzzaman; Mat Teridi, Mohd Asri; Sigmund, Wolfgang

    2015-12-01

    This tutorial review considers defect chemistry of TiO2 and its solid solutions as well as defect-related properties associated with solar-to-chemical energy conversion, such as Fermi level, bandgap, charge transport and surface active sites. Defect disorder is discussed in terms of defect reactions and the related charge compensation. Defect equilibria are used in derivation of defect diagrams showing the effect of oxygen activity and temperature on the concentration of both ionic and electronic defects. These defect diagrams may be used for imposition of desired semiconducting properties that are needed to maximize the performance of TiO2-based photoelectrodes for the generation of solar hydrogen fuel using photo electrochemical cells (PECs) and photocatalysts for water purification. The performance of the TiO2-based semiconductors is considered in terms of the key performance-related properties (KPPs) that are defect related. It is shown that defect engineering may be applied for optimization of the KPPs in order to achieve optimum performance. PMID:26446476

  3. How We Came to Know What We Knew About Semiconductors During World War II

    NASA Astrophysics Data System (ADS)

    Seitz, Frederick

    2003-03-01

    The talk will review the convoluted pace of understanding and use of semiconductors between the isolation of elemental silicon in the 1820s by the Swedish chemist Berzelius and the invention of the integrated circuit.

  4. Structural and optical properties of II-VI and III-V compound semiconductors

    NASA Astrophysics Data System (ADS)

    Huang, Jingyi

    This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and

  5. Exciton-Phonon Interaction Effects in II-Vi Compound Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    Pelekanos, Nikolaos Themelis

    1992-01-01

    In this thesis, we report on two specific examples of exciton-LO phonon Frohlich interaction effects, namely, hot carrier relaxation and temperature dependent exciton linewidth broadening. These phenomena are considered in the context of quasi-two dimensional excitons in strongly polar II-VI semiconductor quantum wells. Hot-exciton luminescence phenomena are investigated in a single quantum well of ZnTe/MnTe where tunneling through thin MnTe barrier layers suppresses the formation of thermalized luminescence. For near resonant photoexcitation, the secondary emission spectrum is modulated by distinct LO-phonon peaks, which, for sufficiently high order of scattering ( >=4), behave like hot luminescence (HPL) as opposed to resonant Raman scattering. This is confirmed by time-resolved spectroscopy as well as by steady-state characteristics such as linewidth broadening and lack of polarization memory. Several novel observations are made: (1) The LO-phonon intermediated energy relaxation involves Coulomb-correlated pairs, i.e. hot excitons, as opposed to independently-relaxing free electrons and holes. (2) The additional weak disorder originating from QW thickness fluctuations plays a major role in the details of the HPL spectra. The major contribution to the ground state exciton linewidth at room temperature originates from LO phonon -intermediated exciton scattering to higher exciton states. A measure of the effect is given by the parameter Gamma_{LO} which increases with the polarity of the material and is independent of dimensionality provided that the LO phonon energy is greater than the exciton binding energy. Measurements of Gamma_{LO} are performed in two quantum well systems: CdTe/MnTe and (Zn,Cd)Se/ZnSe. In the latter system, a strong reduction of Gamma _{LO} is observed as the quantum well width becomes comparable to the three-dimensional exciton Bohr radius. This is explained in terms of a model where quasi-2D confinement effects increase the exciton binding

  6. Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

    NASA Technical Reports Server (NTRS)

    Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.; Wang, J. C.

    1994-01-01

    Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

  7. Three-Dimensional Topological Insulators in I-III-VI2 and II-IV-V2 Chalcopyrite Semiconductors

    SciTech Connect

    Feng, wanxiang; Ding, Jun; Yao, yugui

    2011-01-01

    The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science.1 A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity,2 5 which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI2 and II-IV-V2 can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors,6 and particularly their ability to host room-temperature ferromagnetism,7 9 make them appealing candidates for novel spintronic devices.

  8. Pressure Induced Phase Transition (B3-B1) and Elastic Properties of II-Vi ZnSe Semiconductors

    NASA Astrophysics Data System (ADS)

    Varshney, Dinesh

    2012-07-01

    We evolve an effective interionic interaction potential (EIoIP) to investigate the pressure induced phase transitions from Zinc blende (B3) to Rocksalt (B1) structure in ZnSe semiconductor. The developed potential consists of the long-range Coulomb and three-body interactions (TBI) and the Hafemeister and Flygare type short-range (SR) overlap repulsion extended upto the second neighbor ions and the van der Waals (vdW) interaction. The three-body interactions arise from the electron-shell deformation when the nearest-neighbor ions overlap and has been employed for detailed studies of pressure-induced phase-transition behavior of ZnSe semiconductors. Our calculated value of the phase transition pressure (Pt) is higher and the magnitude of the discontinuity in volume at the transition pressure is consistent with reported data. The variation of second-order elastic constants with pressure resembles that observed in some binary semiconductors. It is inferred that the vdW interaction is effective in obtaining the Debye temperature, Gruneisen parameter, thermal expansion coefficient and compressibility. It is argued that the model with TBI (model II) has yielded somewhat more realistic predictions of the phase-transition and high-pressure behavior as compared to usual two-body potentials (model I) based on phenomenological approach.

  9. Infrared detectors and lasers operating in the 3-12 μm range using band-gap engineered structures with type II band-gap alignment

    NASA Astrophysics Data System (ADS)

    Swaminathan, Venkataraman; Little, John W.; Tober, Richard L.

    2006-02-01

    The Type II broken band-gap alignment in semiconductor structures wherein the conduction band minimum is in one semiconductor (e.g., InAs) and the valence band maximum is in another (e.g., GaInSb) offers certain unique advantages which can be utilized to realize band-gap engineered novel quantum electro-optic devices such as lasers and detectors. The advantages of the type II structures include reduced Auger recombination, extending the effective band-gap energy of materials wherein type I band-gap alignment would give rise to difficulties such as miscibility gap. In this paper we describe the work carried out at the Army Research Laboratory on type II semiconductor quantum electro-optic devices such as IR lasers and detectors operating in the 3-12 μm range. Specifically we will cover the progress made in GaSb based type II strained layer superlattice IR detectors and Interband Cascade IR Lasers. We will also present our recent work in self-assembled quantum dots which have type II band-gap alignment with the matrix material in which the dots are embedded.

  10. Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers

    NASA Astrophysics Data System (ADS)

    Sazio, Pier J. A.; Sparks, Justin R.; He, Rongrui; Krishnamurthi, Mahesh; Fitzgibbons, Thomas C.; Chaudhuri, Subhasis; Baril, Neil F.; Peacock, Anna C.; Healy, Noel; Gopalan, Venkatraman; Badding, John V.

    2015-02-01

    ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.

  11. Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

    NASA Astrophysics Data System (ADS)

    Mourad, D.; Czycholl, G.

    2012-05-01

    For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A x B1- x C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A x B1- x C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight-binding models for the pure AC and BC systems. The electronic properties of the A x B1- x C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1 - x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA) We apply this treatment to the II-VI system Cd x Zn1- x Se, to the III-V system In x Ga1- x As and to the III-nitride system Ga x Al1- x N.

  12. An occupational exposure assessment for engineered nanoparticles used in semiconductor fabrication.

    PubMed

    Shepard, Michele Noble; Brenner, Sara

    2014-03-01

    Engineered nanoparticles of alumina, amorphous silica, and ceria are used in semiconductor device fabrication during wafer polishing steps referred to as 'chemical mechanical planarization' (CMP). Some metal oxide nanoparticles can impact the biological response of cells and organ systems and may cause adverse health effects; additional research is necessary to better understand potential risks from nanomaterial applications and occupational exposure scenarios. This study was conducted to assess potential airborne exposures to nanoparticles and agglomerates using direct-reading instruments and filter-based samples to characterize workplace aerosols by particle number, mass, size, composition, and morphology. Sampling was repeated for tasks in three work areas (fab, subfab, wastewater treatment) at a facility using engineered nanoparticles for CMP. Real-time measurements were collected using a condensation particle counter (CPC), optical particle counter, and scanning mobility particle spectrometer (SMPS). Filter-based samples were analyzed for total mass or the respirable fraction, and for specific metals of interest. Additional air sample filters were analyzed by transmission electron microscopy with energy dispersive x-ray spectroscopy (TEM/EDX) for elemental identification and to provide data on particle size, morphology, and concentration. Peak concentrations measured on the CPC ranged from 1 to 16 particles per cubic centimeter (P cm(-3)) for background and from 4 to 74 P cm(-3) during tasks sampled in the fab; from 1 to 60 P cm(-3) for background and from 3 to 84 P cm(-3) for tasks sampled in the subfab; and from 1160 to 45 894 P cm(-3) for background and from 1710 to 45 519 P cm(-3) during wastewater treatment system filter change tasks. Significant variability was seen among the repeated task measurements and among background comparisons in each area. Several data analysis methods were used to compare each set of task and background measurements. Increased

  13. Thermophysical analysis of II-VI semiconductors by PPE calorimetry and lock-in thermography

    SciTech Connect

    Streza, M.; Dadarlat, D.; Strzałkowski, K.

    2013-11-13

    An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directly irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.

  14. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    DOE PAGESBeta

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprisingmore » phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.« less

  15. Alloy Engineering of Defect Properties in Semiconductors: Suppression of Deep Levels in 2D Transition-metal Dichalcogenides

    SciTech Connect

    Huang, Bing; Yoon, Mina; Sumpter, Bobby G; Wei, Su-Huai; Liu, Feng

    2015-09-18

    Developing practical approaches to effectively reduce the deep defect levels in semiconductors is critical for their use in electronic and optoelectronic devices, but this is still a very challenging task. In this Letter, we propose that specific alloying can provide an effective means to suppress the deep defect levels in semiconductors while maintaining their basic electronic properties. Specifically, we demonstrate that for such 2D transition-metal dichalcogenides as MoSe2 and WSe2, in which the most abundant defects that can induce deep levels are anion vacancies, the deep levels can be effectively suppressed in Mo1-xWxSe2 alloys at low W concentrations. This surprising phenomenon is associated with the fact that the global alloy concentration can substantially tune the band edge energies, whereas the preferred locations of Se vacancies around W atoms control the defect level locally. Our findings illustrate a new concept of alloy engineering and provide a promising approach to control the defect properties of semiconductors.

  16. Cobalt (II) oxide and nickel (II) oxide alloys as potential intermediate-band semiconductors: A theoretical study

    NASA Astrophysics Data System (ADS)

    Alidoust, Nima; Lessio, Martina; Carter, Emily A.

    2016-01-01

    Solar cells based on single pn junctions, employing single-gap semiconductors can ideally achieve efficiencies as high as 34%. Developing solar cells based on intermediate-band semiconductors (IBSCs), which can absorb light across multiple band gaps, is a possible way to defy this theoretical limit and achieve efficiencies as high as 60%. Here, we use first principles quantum mechanics methods and introduce CoO and Co0.25Ni0.75O as possible IBSCs. We show that the conduction band in both of these materials is divided into two distinct bands separated by a band gap. We further show that the lower conduction band (i.e., the intermediate band) is wider in Co0.25Ni0.75O compared with CoO. This should enhance light absorption from the valence band edge to the intermediate band, making Co0.25Ni0.75O more appropriate for use as an IBSC. Our findings provide the basis for future attempts to partially populate the intermediate band and to reduce the lower band gap in Co0.25Ni0.75O in order to enhance the potential of this material for use in IBSC solar cell technologies. Furthermore, with proper identification of heterojunctions and dopants, CoO and Co0.25Ni0.75O could be used in multi-color light emitting diode and laser technologies.

  17. Particle-level engineering of thermal conductivity in matrix-embedded semiconductor nanocrystals.

    PubMed

    Hannah, Daniel C; Ithurria, Sandrine; Krylova, Galyna; Talapin, Dmitri V; Schatz, George C; Schaller, Richard D

    2012-11-14

    Known manipulations of semiconductor thermal transport properties rely upon higher-order material organization. Here, using time-resolved optical signatures of phonon transport, we demonstrate a "bottom-up" means of controlling thermal outflow in matrix-embedded semiconductor nanocrystals. Growth of an electronically noninteracting ZnS shell on a CdSe core modifies thermalization times by an amount proportional to the overall particle radius. Using this approach, we obtain changes in effective thermal conductivity of up to 5× for a nearly constant energy gap. PMID:23066718

  18. Selection of stirling engine parameter and modes of joint operation with the Topaz II

    NASA Astrophysics Data System (ADS)

    Kirillov, E. Ya.; Ogloblin, B. G.; Shalaev, A. I.

    1996-03-01

    In addition to a high-temperature thermionic conversion cycle, application of a low-temperature machine cycle, such as the Stirling engine, is being considered. To select the optimum mode for joint operation of the Topaz II system and Stirling engine, output electric parameters are obtained as a function of thermal power released in the TFE fuel cores. The hydraulic diagram used for joint operation of the Topaz II and the Stirling engine is considered. Requirements to hydraulic characteristics of the Stirling engine heat exchanges are formulated. Scope of necessary modifications to mount the Stirling Engine on the Topaz II is estimated.

  19. Selection of stirling engine parameter and modes of joint operation with the Topaz II

    SciTech Connect

    Kirillov, E.Y.; Ogloblin, B.G.; Shalaev, A.I.

    1996-03-01

    In addition to a high-temperature thermionic conversion cycle, application of a low-temperature machine cycle, such as the Stirling engine, is being considered. To select the optimum mode for joint operation of the Topaz II system and Stirling engine, output electric parameters are obtained as a function of thermal power released in the TFE fuel cores. The hydraulic diagram used for joint operation of the Topaz II and the Stirling engine is considered. Requirements to hydraulic characteristics of the Stirling engine heat exchanges are formulated. Scope of necessary modifications to mount the Stirling Engine on the Topaz II is estimated. {copyright} {ital 1996 American Institute of Physics.}

  20. Introduction to Engineering. Course I: Challenges of Engineering. Course II: Engineering Projects.

    ERIC Educational Resources Information Center

    Barrier, Lynn P.

    This guide, which is designed to be used in a two-course sequence, is intended to prepare college-bound high school juniors and seniors for engineering and related courses at the college level. The guide was developed as part of an experimental competency-based curriculum that integrates the high-tech applications of mathematics and science…

  1. Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Boutramine, Abderrazak; Nafidi, Abdelhakim; Barkissy, Driss; Hannour, Abdelkrim; Elanique, Abdellatif; Gouti, Thami El

    2016-04-01

    The present work is devoted to the study of band structure and band gap in symmetric InAs (d 1 = 25 Å)/GaSb (d 2 = 25 Å) type II superlattice. Our calculations were performed in the envelope function formalism with the valence band offset Λ = 570 meV. We discussed the semiconductor to semimetal transition and the evolutions of the fundamental band gap, E g (Γ), as a function of d 1, Λ and the temperature. This study suggests that a wide range of wavelength can be reached by adjusting d 1. In addition, E g (Γ, T) decreases from 288.7 to 230 meV in the range of 4.2-300 K, corresponding to the cutoff wavelength ranging from 4.3 to 5.4 µm. These latter results explain the recent experimental ones realized by C. Cervera et al. for our Λ = 588 meV.

  2. Chemistry and the Internal Combustion Engine II: Pollution Problems.

    ERIC Educational Resources Information Center

    Hunt, C. B.

    1979-01-01

    Discusses pollution problems which arise from the use of internal combustion (IC) engines in the United Kingdom (UK). The IC engine exhaust emissions, controlling IC engine pollution in the UK, and some future developments are also included. (HM)

  3. Learning Activity Packets for Auto Mechanics II. Section A--Engine Rebuilding.

    ERIC Educational Resources Information Center

    Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

    Eight learning activity packets (LAPs) are provided for the instructional area of engine rebuilding in the auto mechanics II program. They accompany an instructor's guide available separately. The LAPs outline the study activities and performance tasks for these eight units: (1) engine condition evaluation; (2) engine removal; (3) engine…

  4. Advances in graphene-based semiconductor photocatalysts for solar energy conversion: fundamentals and materials engineering.

    PubMed

    Xie, Xiuqiang; Kretschmer, Katja; Wang, Guoxiu

    2015-08-28

    Graphene-based semiconductor photocatalysis has been regarded as a promising technology for solar energy storage and conversion. In this review, we summarized recent developments of graphene-based photocatalysts, including preparation of graphene-based photocatalysts, typical key advances in the understanding of graphene functions for photocatalytic activity enhancement and methodologies to regulate the electron transfer efficiency in graphene-based composite photocatalysts, by which we hope to offer enriched information to harvest the utmost fascinating properties of graphene as a platform to construct efficient graphene-based composite photocatalysts for solar-to-energy conversion. PMID:26204442

  5. Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

    NASA Astrophysics Data System (ADS)

    Yi, J. B.; Lim, C. C.; Xing, G. Z.; Fan, H. M.; van, L. H.; Huang, S. L.; Yang, K. S.; Huang, X. L.; Qin, X. B.; Wang, B. Y.; Wu, T.; Wang, L.; Zhang, H. T.; Gao, X. Y.; Liu, T.; Wee, A. T. S.; Feng, Y. P.; Ding, J.

    2010-04-01

    We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.

  6. Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO.

    PubMed

    Yi, J B; Lim, C C; Xing, G Z; Fan, H M; Van, L H; Huang, S L; Yang, K S; Huang, X L; Qin, X B; Wang, B Y; Wu, T; Wang, L; Zhang, H T; Gao, X Y; Liu, T; Wee, A T S; Feng, Y P; Ding, J

    2010-04-01

    We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure. PMID:20481907

  7. Interface Schottky barrier engineering via strain in metal-semiconductor composites.

    PubMed

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-21

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures. PMID:26511292

  8. Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering.

    PubMed

    Ming, Wenmei; Wang, Z F; Zhou, Miao; Yoon, Mina; Liu, Feng

    2016-01-13

    Spin splitting of Rashba states in two-dimensional electron system provides a promising mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface β-InSe(0001) can possess "ideal" Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substrate band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green's function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states. PMID:26651374

  9. Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

    DOE PAGESBeta

    Ming, Wenmei; Wang, Z. F.; Zhou, Miao; Yoon, Mina; Liu, Feng

    2015-12-10

    Spin splitting of Rashba states in two-dimensional electron system provides a mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface β-InSe(0001) can possess “ideal” Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substratemore » band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green’s function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states.« less

  10. Formation of Ideal Rashba States on Layered Semiconductor Surfaces Steered by Strain Engineering

    SciTech Connect

    Ming, Wenmei; Wang, Z. F.; Zhou, Miao; Yoon, Mina; Liu, Feng

    2015-12-10

    Spin splitting of Rashba states in two-dimensional electron system provides a mechanism of spin manipulation for spintronics applications. However, Rashba states realized experimentally to date are often outnumbered by spin-degenerated substrate states at the same energy range, hindering their practical applications. Here, by density functional theory calculation, we show that Au one monolayer film deposition on a layered semiconductor surface β-InSe(0001) can possess “ideal” Rashba states with large spin splitting, which are completely situated inside the large band gap of the substrate. The position of the Rashba bands can be tuned over a wide range with respect to the substrate band edges by experimentally accessible strain. Furthermore, our nonequilibrium Green’s function transport calculation shows that this system may give rise to the long-sought strong current modulation when made into a device of Datta-Das transistor. Similar systems may be identified with other metal ultrathin films and layered semiconductor substrates to realize ideal Rashba states.

  11. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    PubMed Central

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  12. High Resolution Triple Axis X-Ray Diffraction Analysis of II-VI Semiconductor Crystals

    NASA Technical Reports Server (NTRS)

    Volz, H. M.; Matyi, R. J.

    1999-01-01

    The objective of this research program is to develop methods of structural analysis based on high resolution triple axis X-ray diffractometry (HRTXD) and to carry out detailed studies of defect distributions in crystals grown in both microgravity and ground-based environments. HRTXD represents a modification of the widely used double axis X-ray rocking curve method for the characterization of grown-in defects in nearly perfect crystals. In a double axis rocking curve experiment, the sample is illuminated by a monochromatic X-ray beam and the diffracted intensity is recorded by a fixed, wide-open detector. The intensity diffracted by the sample is then monitored as the sample is rotated through the Bragg reflection condition. The breadth of the peak, which is often reported as the full angular width at half the maximum intensity (FWHM), is used as an indicator of the amount of defects in the sample. This work has shown that high resolution triple axis X-ray diffraction is an effective tool for characterizing the defect structure in semiconductor crystals, particularly at high defect densities. Additionally, the technique is complimentary to X-ray topography for defect characterization in crystals.

  13. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

    NASA Astrophysics Data System (ADS)

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-06-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

  14. High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors.

    PubMed

    Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

    2016-01-01

    High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10(7) A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65 μA) and response speed (40-60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

  15. Interface Schottky barrier engineering via strain in metal-semiconductor composites

    NASA Astrophysics Data System (ADS)

    Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

    2016-01-01

    The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation

  16. Optically engineered ultrafast pulses for controlled rotations of exciton qubits in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Gamouras, Angela; Mathew, Reuble; Hall, Kimberley C.

    2012-07-01

    Shaped ultrafast pulses designed for controlled-rotation (C-ROT) operations on exciton qubits in semiconductor quantum dots are demonstrated using a quantum control apparatus operating at ˜1 eV. Optimum pulse shapes employing amplitude and phase shaping protocols are implemented using the output of an optical parametric oscillator and a programmable pulse shaping system, and characterized using autocorrelation and multiphoton intrapulse interference phase scan techniques. We apply our pulse characterization results and density matrix simulations to assess the fundamental limits on the fidelity of the C-ROT operation, providing a benchmark for the evaluation of sources of noise in other quantum control experiments. Our results indicate the effectiveness of pulse shaping techniques for achieving high fidelity quantum operations in quantum dots with a gate time below 1 ps.

  17. Large enhancements of thermopower and carrier mobility in quantum dot engineered bulk semiconductors.

    PubMed

    Liu, Yuanfeng; Sahoo, Pranati; Makongo, Julien P A; Zhou, Xiaoyuan; Kim, Sung-Joo; Chi, Hang; Uher, Ctirad; Pan, Xiaoqing; Poudeu, Pierre F P

    2013-05-22

    The thermopower (S) and electrical conductivity (σ) in conventional semiconductors are coupled adversely through the carriers' density (n) making it difficult to achieve meaningful simultaneous improvements in both electronic properties through doping and/or substitutional chemistry. Here, we demonstrate the effectiveness of coherently embedded full-Heusler (FH) quantum dots (QDs) in tailoring the density, mobility, and effective mass of charge carriers in the n-type Ti(0.1)Zr(0.9)NiSn half-Heusler matrix. We propose that the embedded FH QD forms a potential barrier at the interface with the matrix due to the offset of their conduction band minima. This potential barrier discriminates existing charge carriers from the conduction band of the matrix with respect to their relative energy leading to simultaneous large enhancements of the thermopower (up to 200%) and carrier mobility (up to 43%) of the resulting Ti(0.1)Zr(0.9)Ni(1+x)Sn nanocomposites. The improvement in S with increasing mole fraction of the FH-QDs arises from a drastic reduction (up to 250%) in the effective carrier density coupled with an increase in the carrier's effective mass (m*), whereas the surprising enhancement in the mobility (μ) is attributed to an increase in the carrier's relaxation time (τ). This strategy to manipulate the transport behavior of existing ensembles of charge carriers within a bulk semiconductor using QDs is very promising and could pave the way to a new generation of high figure of merit thermoelectric materials. PMID:23607819

  18. Turnable Semiconductor Laser Spectroscopy in Hollow Optical Waveguides, Phase II SBIR

    SciTech Connect

    Gregory J. Fetzer, Ph.D.

    2001-12-24

    In this study a novel optical trace gas sensor based on a perforated hollow waveguide (PHW) was proposed. The sensor has been given the acronym ESHOW for Environmental Sensor using Hollow Optical Waveguides. Realizations of the sensor have demonstrated rapid response time (<2s), low minimum detection limits (typically around 3 x 10-5 absorbance). Operation of the PHW technology has been demonstrated in the near-infrared (NIR) and mid0infrared (MIR) regions of the spectrum. Simulation of sensor performance provided in depth understanding of the signals and signal processing required to provide high sensitivity yet retain rapid response to gas changes. A dedicated sensor electronics and software foundation were developed during the course of the Phase II effort. Commercial applications of the sensor are ambient air and continuous emissions monitoring, industrial process control and hazardous waste site monitoring. There are numerous other applications for such a sensor including medical diagnosis and treatment, breath analysis for legal purposes, water quality assessment, combustion diagnostics, and chemical process control. The successful completion of Phase II resulted in additional funding of instrument development by the Nations Institute of Heath through a Phase I SBIR grant and a strategic teaming relationship with a commercial manufacture of medical instrumentation. The purpose of the NIH grant and teaming relationship is to further develop the sensor to monitor NO in exhaled breath for the purposes of asthma diagnosis.

  19. Photoluminescence quantum efficiency of various ternary II VI semiconductor solid solutions

    NASA Astrophysics Data System (ADS)

    Westphäling, R.; Bauer, S.; Klingshirn, C.; Reznitstsky, A.; Verbin, S.

    1998-02-01

    As a result of the spatial localization of excitons in II-VI mixed crystals the external luminescence quantum efficiency η lum is expected to be remarkably higher than in the corresponding binary compounds. To investigate this assumption we built a new experimental setup with a miniature integrating sphere fitted into a cryostat. At low temperatures in the binary systems CdS and CdSe we always found η lum ⩽ 25% in the main luminescence bands (arising from bound excitons (D 0X, A 0X) and donor—acceptor pair recombination). For the free-exciton luminescence η lum was more than two orders of magnitude less. In contrast, CdS 1- xSe x mixed crystals show η lum up to 70% in the luminescence from localized states, indicating that the nonradiative recombination is strongly suppressed for localized excitons. Other II-VI alloys (ZnSe 1- xTe x Zn 1- xCd xS and Zn 1- xCd xSe) show partly considerably lower values for η lum. The temperature dependence of η lum gives information about various activation processes to nonradiative recombination channels.

  20. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  1. Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Wang, Jiaming; Xu, Fujun; Zhang, Xia; An, Wei; Li, Xin-Zheng; Song, Jie; Ge, Weikun; Tian, Guangshan; Lu, Jing; Wang, Xinqiang; Tang, Ning; Yang, Zhijian; Li, Wei; Wang, Weiying; Jin, Peng; Chen, Yonghai; Shen, Bo

    2014-10-01

    Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelectronic devices and consequently the relevant performance of this material system. Here we show a brandnew type-II band alignment of the lattice-matched In0.17Al0.83N/GaN heterostructure from the perspective of both experimental observations and first-principle theoretical calculations. The band discontinuity is dominated by the conduction band offset ΔEC, with a small contribution from the valence band offset ΔEV which equals 0.1 eV (with being above). Our work may open up new prospects to realize high-performance III-Nitrides optoelectronic devices based on type-II energy band engineering.

  2. General synthesis of manganese-doped II-VI and III-V semiconductor nanowires.

    PubMed

    Radovanovic, Pavle V; Barrelet, Carl J; Gradecak, Silvija; Qian, Fang; Lieber, Charles M

    2005-07-01

    A general approach for the synthesis of manganese-doped II-VI and III-V nanowires based on metal nanocluster-catalyzed chemical vapor deposition has been developed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy studies of Mn-doped CdS, ZnS, and GaN nanowires demonstrate that the nanowires are single-crystal structures and homogeneously doped with controllable concentrations of manganese ions. Photoluminescence measurements of individual Mn-doped CdS and ZnS nanowires show characteristic pseudo-tetrahedral Mn2+ ((4)T1-->(6)A1) transitions that match the corresponding transitions in bulk single-crystal materials well. Photoluminescence studies of Mn-doped GaN nanowires suggest that manganese is incorporated as a neutral (Mn3+) dopant that partially quenches the GaN band-edge emission. The general and controlled synthesis of nanowires doped with magnetic metal ions opens up opportunities for fundamental physical studies and could lead to the development of nanoscale spintronic devices. PMID:16178248

  3. Small Engines Care, Operation, Maintenance and Repair. Volume II.

    ERIC Educational Resources Information Center

    Turner, J. Howard

    Developed by teacher educators and agricultural engineers, this teacher and student reference is for use in a course in small engine operation and maintenance. Content includes: (1) Principles of Good Workmanship, (2) Repairing Starters, (3) Maintaining and Repairing Ignition Systems, (4) Repairing Fuel Systems, (5) Repairing Governors, (6)…

  4. Electrochemical photovoltaic cells stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October 1980 to 31 December 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1981-01-20

    A program to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors is described. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. Work on redox couple stabilization of n-CdX photoanodes has focused on fast metal-based one-electron couples in various nonaqueous solvents which represent an extension of work with the methanol/ferro-ferricyanide system, which, although stabilizing for n-CdSe photoanodes, has been found to be photolytically unstable. Very promising results which were obtained for the FeCl/sub 4//sup 1-/2-/ couple in acetonitrile suggest that related chloro-couples should be considered, including the colorless two-electron tin (II, IV) and antimony (III, V) systems. Conducting polymer films of polyrrole photoelectrochemically deposited onto n-type semiconductors were previously shown to protect these electrode materials from photodecomposition while permitting electron exchange with the electrolyte, but poor adhesion has remained a key problem. Recently, improved adhesion has been attained for roughened semiconductor surfaces. It now appears that polypyrrole films are to some extent permeable to solvent/solute species since the film stability depends on the nature of the redox electrolyte, and semiconductor decomposition products seem to form underneath the film in some cases. One possibility for circumventing this problem is to incorporate larger species, e.g., phthalocyanine dyes, within the film matrix.

  5. Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states.

    PubMed

    Bilc, Daniel I; Hautier, Geoffroy; Waroquiers, David; Rignanese, Gian-Marco; Ghosez, Philippe

    2015-04-01

    Thermoelectrics are promising for addressing energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures and the introduction of resonant states were suggested as possible solutions to this paradox, but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly directional character of some orbitals to engineer the band structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principle calculations, the theoretical concept is demonstrated in Fe2YZ Heusler compounds, yielding power factors 4 to 5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting, or photovoltaic applications. PMID:25884131

  6. Triad model of education (II) and instructional engineering.

    PubMed

    Vargas, E A

    2007-11-01

    Despite the money and sweat that go into new instructional technologies, they do not produce the overall high level of student performances that societies seek. More effective teaching calls for a profound solution. It requires a coordinate triad of factors: a proper science, the correct organizational structure, and an engineering instructional technology. This second of a series of articles on the Triad Model of Education concentrates on instructional engineering. The instructional engineering drawn from the science is contingency-based. Contingency-based instructional systems always handle the inevitable two components of instruction: the repertoires of students and the setups that shape those repertoires. The setup component features five elements: subject matter, objectives, quality control, presentation modes, and logistics. The repertoire component consists of the governance of repertoires-event and lingual governed, the type of repertoire-knowing, solving, and creating, and the variability of the repertoire--convergent and divergent. These elements, and their required engineering, reveal an instructional task more complex than previously considered. Progress with such complexity occurs only when all components of the triad are in place. PMID:17992958

  7. Usage of the SYSCAP II circuit analysis program to determine semiconductor failure threshold levels caused by lightning/EMP transients

    NASA Astrophysics Data System (ADS)

    Rusher, D. L.; Kleiner, C. T.

    1983-06-01

    An improved technique for calculating semiconductor junction heating resulting from arbitrary time-varying source terms is described. A FORTRAN subroutine is developed which permits solution of the convolution integral in the SYSCAP circuit analysis program which will simulate the thermal transient for each semiconductor of interest in a circuit subject to lightning/electromagnetic pulses disturbances. An example circuit is used to demonstrate the techniques; the results compare favorably with laboratory test data.

  8. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in II-VI semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chishti, Sabiq; Ghosh, Bahniman; Bishnoi, Bhupesh

    2015-02-01

    We have analyzed the spin transport behaviour of four II-VI semiconductor nanowires by simulating spin polarized transport using a semi-classical Monte-Carlo approach. The different scattering mechanisms considered are acoustic phonon scattering, surface roughness scattering, polar optical phonon scattering, and spin flip scattering. The II-VI materials used in our study are CdS, CdSe, ZnO and ZnS. The spin transport behaviour is first studied by varying the temperature (4-500 K) at a fixed diameter of 10 nm and also by varying the diameter (8-12 nm) at a fixed temperature of 300 K. For II-VI compounds, the dominant mechanism is for spin relaxation; D'yakonovPerel and Elliot Yafet have been actively employed in the first order model to simulate the spin transport. The dependence of the spin relaxation length (SRL) on the diameter and temperature has been analyzed.

  9. Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering

    NASA Astrophysics Data System (ADS)

    Felici, Marco; Birindelli, Simone; Trotta, Rinaldo; Francardi, Marco; Gerardino, Annamaria; Notargiacomo, Andrea; Rubini, Silvia; Martelli, Faustino; Capizzi, Mario; Polimeni, Antonio

    2014-12-01

    In dilute-nitride semiconductors, the possibility to selectively passivate N atoms by spatially controlled hydrogen irradiation allows for tailoring the effective N concentration of the host—and, therefore, its electronic and structural properties—with a precision of a few nanometers. In the present work, this technique is applied to the realization of ordered arrays of GaAs1 -xNx/GaAs1 -xNx∶H wires oriented at different angles with respect to the crystallographic axes of the material. The creation of a strongly anisotropic strain field in the plane of the sample, due to the lattice expansion of the fully hydrogenated regions surrounding the GaAs1 -xNx wires, is directly responsible for the peculiar polarization properties observed for the wire emission. Temperature-dependent polarization-resolved microphotoluminescence measurements, indeed, reveal a nontrivial dependence of the degree of linear polarization on the wire orientation, with maxima for wires parallel to the [110] and [1 1 ¯ 0 ] directions and a pronounced minimum for wires oriented along the [100] axis. In addition, the polarization direction is found to be precisely perpendicular to the wire when the latter is oriented along high-symmetry crystal directions, whereas significant deviations from a perfect orthogonality are measured for all other wire orientations. These findings, which are well reproduced by a theoretical model based on finite-element calculations of the strain profile of our GaAs1 -xNx/GaAs1 -xNx∶H heterostructures, demonstrate our ability to control the polarization properties of dilute-nitride micro- and nanostructures via H-assisted strain engineering. This additional degree of freedom may prove very useful in the design and optimization of innovative photonic structures relying on the integration of dilute-nitride-based light emitters with photonic crystal microcavities.

  10. Safety-I, Safety-II and Resilience Engineering.

    PubMed

    Patterson, Mary; Deutsch, Ellen S

    2015-12-01

    In the quest to continually improve the health care delivered to patients, it is important to understand "what went wrong," also known as Safety-I, when there are undesired outcomes, but it is also important to understand, and optimize "what went right," also known as Safety-II. The difference between Safety-I and Safety-II are philosophical as well as pragmatic. Improving health care delivery involves understanding that health care delivery is a complex adaptive system; components of that system impact, and are impacted by, the actions of other components of the system. Challenges to optimal care include regular, irregular and unexampled threats. This article addresses the dangers of brittleness and miscalibration, as well as the value of adaptive capacity and margin. These qualities can, respectively, detract from or contribute to the emergence of organizational resilience. Resilience is characterized by the ability to monitor, react, anticipate, and learn. Finally, this article celebrates the importance of humans, who make use of system capabilities and proactively mitigate the effects of system limitations to contribute to successful outcomes. PMID:26549146

  11. Blooms' separation of the final exam of Engineering Mathematics II: Item reliability using Rasch measurement model

    NASA Astrophysics Data System (ADS)

    Fuaad, Norain Farhana Ahmad; Nopiah, Zulkifli Mohd; Tawil, Norgainy Mohd; Othman, Haliza; Asshaari, Izamarlina; Osman, Mohd Hanif; Ismail, Nur Arzilah

    2014-06-01

    In engineering studies and researches, Mathematics is one of the main elements which express physical, chemical and engineering laws. Therefore, it is essential for engineering students to have a strong knowledge in the fundamental of mathematics in order to apply the knowledge to real life issues. However, based on the previous results of Mathematics Pre-Test, it shows that the engineering students lack the fundamental knowledge in certain topics in mathematics. Due to this, apart from making improvements in the methods of teaching and learning, studies on the construction of questions (items) should also be emphasized. The purpose of this study is to assist lecturers in the process of item development and to monitor the separation of items based on Blooms' Taxonomy and to measure the reliability of the items itself usingRasch Measurement Model as a tool. By using Rasch Measurement Model, the final exam questions of Engineering Mathematics II (Linear Algebra) for semester 2 sessions 2012/2013 were analysed and the results will provide the details onthe extent to which the content of the item providesuseful information about students' ability. This study reveals that the items used in Engineering Mathematics II (Linear Algebra) final exam are well constructed but the separation of the items raises concern as it is argued that it needs further attention, as there is abig gap between items at several levels of Blooms' cognitive skill.

  12. Engineering Certification Program Self-Study Course, Construction Inspection - Part II. Engineering Management [Series].

    ERIC Educational Resources Information Center

    Owsley, Fran, Ed.

    This book is a part of a self-study sequence in an engineering certification program. This volume concerns inspection and quality control of concrete structures. Sections titles are Inspection and Quality Control of Concrete; General Guides for Concrete Work; Concrete Floor and Slab Construction; Concrete Formwork; Correct and Incorrect Methods of…

  13. Effect of dissolved organic matter on Fe(II) oxidation in natural and engineered waters.

    PubMed

    Lee, Ying Ping; Fujii, Manabu; Terao, Koumei; Kikuchi, Tetsuro; Yoshimura, Chihiro

    2016-10-15

    Fe(II) oxidation was investigated in samples from the Sagami River basin (Japan) with particular emphasis on the effect of dissolved organic matter (DOM) in an urban river system. Collected samples consisted of main stream and tributary waters impacted to a moderate and minor extent by anthropogenic activities, respectively, and treated effluents from adjacent municipal wastewater treatment plants (MWWTPs: as representative anthropogenic point source). Nanomolar Fe(II) oxidation was measured in air-saturated waters using luminol chemiluminescence in the dark at 25 °C. Second-order rate constant for Fe(II) oxidation (with respect to Fe(II) and O2 concentrations) showed spatial and temporal variation. Annual average of the rate constant was highest for MWWTP effluents, followed by reservoir and river waters, with tributary waters showing the lowest oxidation rate. Manipulation experiments indicated that, in addition to pH (7.8-8.4), DOM characteristics are important explanatory variable for the Fe(II) oxidation. For example, the addition of MWWTP-derived humic-type DOM to anthropogenically less-influenced tributary water resulted in substantial increase in the oxidation rate. Significant negative correlation observed between the specific UV absorbance (SUVA254) and Fe(II) oxidation rate constant (pH 8.0) suggests a potential effect of humic-type DOM with low SUVA254 (high aliphatic content) on Fe(II) oxidation in natural and engineered waters. PMID:27450354

  14. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  15. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  16. MHC II gene knockout in tissue engineering may prevent immune rejection of transplants.

    PubMed

    Yang, Miaomiao; Liu, Lei

    2008-01-01

    The repair and reconstruction of tissue defects and organ loss are severe problems, and many patients are eager to find avenues to these matters. Up until now, the number of methods used to repair tissue defects has increased, but all of these have their own advantages and inconveniences, and do not seem to have been optimized. The development of tissue engineering offers new hopes to patients with tissue defects. To regenerate tissues and organs, we first need a source of seed cells. However, the sources of autologous cells are restricted, cell number is small, and xenogenic cells result in immunological rejections. Major histocompatibility complex (MHC) polymorphism is a key factor in tissue grafts. MHC II, in particular, is associated with allogeneic transplantation. We hypothesize that if we knock-out the MHC II gene of mesenchymal stem cells (MSCs) in vitro, these cells would not express MHC II molecules, and rejection problems will be solved. Accordingly, the industrialization of tissue engineering will be feasible, and products of tissue engineering will be utilized widely for any clinical treatments. PMID:17904760

  17. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. Third technical progress report, 1 October-31 December 1979

    SciTech Connect

    Nouffi, R.; Tench, D.; Warren, L.

    1980-01-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Stabilization of n-CdSe against photodissolution has been achieved for the methanol/tetraethylammonium ferro-ferricyanide system. No degradation of the photocurrent or the electrode surface, even in the presence of traces of water, has been observed for runs up to 700 h at 6 mA/cm/sup 2/ and AM1 light intensity. In recent studies with higher quality single crystal CdSe as well as polycrystalline CdTe-CdSe photoanodes, stable photocurrents of 7.5 mA/cm/sup 2/, corresponding to 4.4% conversion efficiency have been obtained. Through the use of highly purified ferro-ferricyanide electrolytes and/or organic dications, higher conversion efficiencies should be attainable. Preliminary evaluation of a series of sulfur-containing 1,2-dithiolene metal complexes for stabilization of CdX (X=Se, Te, or S) photoanodes in acetonitrile solution has been completed. In certain cases, effective hole capture is indicated and favorable negative shifts in the flatband potentials have been observed. A conducting polymer film (derived from pyrrole) has been electrochemically deposited on a semiconductor electrode. These electrochemically generated polymer films seem to be exceptionally stable and adherent. Studies of the cyanide ion as an electron-transfer mediator in aqueous Fe(CN)/sub 6//sup 3 -///sup 4 -/ electrolytes, and new directions for chemical modification of CdX electrodes are also discussed.

  18. Nature-Inspired, Highly Durable CO2 Reduction System Consisting of a Binuclear Ruthenium(II) Complex and an Organic Semiconductor Using Visible Light.

    PubMed

    Kuriki, Ryo; Matsunaga, Hironori; Nakashima, Takuya; Wada, Keisuke; Yamakata, Akira; Ishitani, Osamu; Maeda, Kazuhiko

    2016-04-20

    A metal-free organic semiconductor of mesoporous graphitic carbon nitride (C3N4) coupled with a Ru(II) binuclear complex (RuRu') containing photosensitizer and catalytic units selectively reduced CO2 into HCOOH under visible light (λ > 400 nm) in the presence of a suitable electron donor with high durability, even in aqueous solution. Modification of C3N4 with Ag nanoparticles resulted in a RuRu'/Ag/C3N4 photocatalyst that exhibited a very high turnover number (>33000 with respect to the amount of RuRu'), while maintaining high selectivity for HCOOH production (87-99%). This turnover number was 30 times greater than that reported previously using C3N4 modified with a mononuclear Ru(II) complex, and by far the highest among the metal-complex/semiconductor hybrid systems reported to date. The results of photocatalytic reactions, emission decay measurements, and time-resolved infrared spectroscopy indicated that Ag nanoparticles on C3N4 collected electrons having lifetimes of several milliseconds from the conduction band of C3N4, which were transferred to the excited state of RuRu', thereby promoting photocatalytic CO2 reduction driven by two-step photoexcitation of C3N4 and RuRu'. This study also revealed that the RuRu'/Ag/C3N4 hybrid photocatalyst worked efficiently in water containing a proper electron donor, despite the intrinsic hydrophobic nature of C3N4 and low solubility of CO2 in an aqueous environment. PMID:27027822

  19. Gigahertz to terahertz tunable all-optical single-side-band microwave generation via semiconductor optical amplifier gain engineering.

    PubMed

    Li, Fangxin; Helmy, Amr S

    2013-11-15

    We propose and demonstrate a technique to generate low-noise broadly tunable single-side-band microwaves using cascaded semiconductor optical amplifiers (SOAs) using no RF bias. The proposed technique uses no RF components and is based on polarization-state controlled gain-induced four-wave mixing in SOAs. Microwave generation from 40 to 875 GHz with a line-width ~22 KHz is experimentally demonstrated. PMID:24322069

  20. Preliminary Results of Altitude-Wind-Tunnel Investigation of X24C-4B Turbojet Engine. II - Engine Performance. II; Engine Performance

    NASA Technical Reports Server (NTRS)

    Meyer, Carl L.; Bloomer, Harry E.

    1948-01-01

    An investigation was conducted in the NACA Cleveland altitude wind tunnel to evaluate the performance characteristics of the X24C-4B turbojet engine over a range of simulated altitudes from 5000 to 45,000 feet,simulated flight Mach numbers from 0 to 1.08, and engine speeds from 4000 to 12,500 rpm. Performance data are presented to show graphically the effects of altitude at a flight Mach number of 0.25 and of flight Mach number at an altitude of 25,000 feet. The performance data are generalized to show the applicability of methods used to determine performance at any altitude from data obtained at a given altitude. A complete tabulation of performance data, as well as lubrication- and fuel- system data, is presented.

  1. Engineering English and the High-Tech Industry: A Case Study of an English Needs Analysis of Process Integration Engineers at a Semiconductor Manufacturing Company in Taiwan

    ERIC Educational Resources Information Center

    Spence, Paul; Liu, Gi-Zen

    2013-01-01

    The global high-tech industry is characterized by extreme competitiveness, innovation, and widespread use of English. Consequently, Taiwanese high-tech companies require engineers that are talented in both their engineering and English abilities. In response to the lack of knowledge regarding the English skills needed by engineers in Taiwan's…

  2. Electron-beam-enhanced oxidation processes in II-VI compound semiconductors observed by high-resolution electron microscopy

    SciTech Connect

    Thangaraj, N.; Wessels, B.W.

    1990-02-01

    Enhanced oxidation of ZnS and ZnSe semiconductor surfaces has been observed in situ during electron irradiation in a high-resolution electron microscope. The phase present at the surface region has been identified as ZnO by optical diffractogram and selected area electron diffraction techniques. For ZnS oxidation, both hexagonal ZnO having a random orientation and cubic ZnO in perfect epitaxial relationship with the bulk ZnS were observed. Enhanced oxidation of ZnSe to ZnO has also been observed under electron beam irradiation. However, only the hexagonal form was observed. The oxidation rates for both ZnS and ZnSe depended on electron flux but was independent of orientation. A model in which the oxidation process is limited by diffusion through the oxide film is proposed. By electron irradiation the diffusion rate is enhanced presumably by a nonthermal process.

  3. Metabolic engineering of Pichia pastoris for the production of dammarenediol-II.

    PubMed

    Liu, Xin-Bin; Liu, Min; Tao, Xin-Yi; Zhang, Zhong-Xi; Wang, Feng-Qing; Wei, Dong-Zhi

    2015-12-20

    Dammarenediol-II is the nucleus of dammarane-type ginsenosides, which are a group of active triterpenoids exhibiting various pharmacological activities. Based on the native triterpene synthetic pathway, a dammarenediol-II synthetic pathway was established in Pichia pastoris by introducing a dammarenediol-II synthase gene (PgDDS) from Panax ginseng, which is responsible for the cyclization of 2,3-oxidosqualene to dammarenediol-II in this study. To enhance productivity, a strategy of "increasing supply and reducing competitive consumption of 2,3-oxidosqualene" was used. To increase the supply of 2,3-oxidosqualene, we augmented expression of the ERG1 gene, which is responsible for 2,3-oxidosqualene synthesis. This significantly improved the yield of dammarenediol-II over 6.7-fold, from 0.030mg/g dry cell weight (DCW) to 0.203mg/g DCW. Subsequently, to reduce competition for 2,3-oxidosqualene from ergosterol biosynthesis without affecting the normal growth of P. pastoris, we targeted the ERG7gene, which is responsible for conversion of 2,3-oxidosqualene to lanosterol. This gene was downregulated by replacing its native promoter with a thiamine-repressible promoter, using a marker-recycling and gene-targeting Cre- lox71/66 system developed for P. pastoris herein. The yield of dammarenediol-II was further increased more than 3.6-fold, to 0.736mg/g DCW. Furthermore, the direct addition of 0.5g/L squalene into the culture medium further enhanced the yield of dammarenediol-II to 1.073mg/g DCW, which was 37.5-fold higher than the yield from the strain with the PgDDS gene introduction only. The P. pastoris strains engineered in this study constitute a good platform for further production of ginsenosides in Pichia species. PMID:26467715

  4. Analysis of type II diabetes mellitus adipose-derived stem cells for tissue engineering applications.

    PubMed

    Minteer, Danielle Marie; Young, Matthew T; Lin, Yen-Chih; Over, Patrick J; Rubin, J Peter; Gerlach, Jorg C; Marra, Kacey G

    2015-01-01

    To address the functionality of diabetic adipose-derived stem cells in tissue engineering applications, adipose-derived stem cells isolated from patients with and without type II diabetes mellitus were cultured in bioreactor culture systems. The adipose-derived stem cells were differentiated into adipocytes and maintained as functional adipocytes. The bioreactor system utilizes a hollow fiber-based technology for three-dimensional perfusion of tissues in vitro, creating a model in which long-term culture of adipocytes is feasible, and providing a potential tool useful for drug discovery. Daily metabolic activity of the adipose-derived stem cells was analyzed within the medium recirculating throughout the bioreactor system. At experiment termination, tissues were extracted from bioreactors for immunohistological analyses in addition to gene and protein expression. Type II diabetic adipose-derived stem cells did not exhibit significantly different glucose consumption compared to adipose-derived stem cells from patients without type II diabetes (p > 0.05, N = 3). Expression of mature adipocyte genes was not significantly different between diabetic/non-diabetic groups (p > 0.05, N = 3). Protein expression of adipose tissue grown within all bioreactors was verified by Western blotting.The results from this small-scale study reveal adipose-derived stem cells from patients with type II diabetes when removed from diabetic environments behave metabolically similar to the same cells of non-diabetic patients when cultured in a three-dimensional perfusion bioreactor, suggesting that glucose transport across the adipocyte cell membrane, the hindrance of which being characteristic of type II diabetes, is dependent on environment. The presented observation describes a tissue-engineered tool for long-term cell culture and, following future adjustments to the culture environment and increased sample sizes, potentially for anti-diabetic drug testing. PMID:26090087

  5. Mn-based ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Sawicki, Maciej

    2003-07-01

    The present status of research and prospects for device applications of ferromagnetic (diluted magnetic) semiconductors (DMS) is presented. We review the nature of the electronic states and the mechanisms of the carrier-mediated exchange interactions (mean-field Zener model) in p-type Mn-based III-V and II-VI compounds, highlighting a good correspondence of experimental findings and theoretical predictions. An account of the latest progress on the road of increasing the Currie point to above the room temperature is given for both families of compounds. We comment on a possibility of obtaining ferromagnetism in n-type materials, taking (Zn,Mn)O:Al as the example. Concerning technologically important issue of easy axis and domain engineering, we present theoretical predictions and experimental results on the temperature and carrier concentration driven change of magnetic anisotropy in (Ga,Mn)As.

  6. Electrochemical photovoltaic cells/stabilization and optimization of II-VI semiconductors. First technical progress report, 15 April 1980-30 June 1980

    SciTech Connect

    Noufi, R.; Tench, D.; Warren, L.

    1980-07-20

    The overall goal of this program is to provide the basis for designing a practical electrochemical solar cell based on the II-VI compound semiconductors. Emphasis is on developing new electrolyte redox systems and electrode surface modifications which will stabilize the II-VI compounds against photodissolution without seriously degrading the long-term solar response. The bulk electrode material properties are also being optimized to provide the maximum solar conversion efficiency and greatest inherent electrode stability. Factors limiting the short circuit current of the n-CdSe/methanol/ferro-ferricyanide system to 17.5 mA/cm/sup 2/ have been identified. The principal limiting factor is apparently specific adsorption of hexacyanoferrate species on the electrode surface which occurs at higher redox couple concentrations and slows the overall charge transfer process. Ion pairing also occurs, resulting in a low mass transport rate (smaller diffusion coefficients and increased solution viscosity), and probably enhances the degree of specific adsorption. Improvements in the performance of this system will require mitigation of the interactions between the redox species and the electrode surface, e.g., via electrolytes with reduced ion-pairing tendencies or the use of electrode surface films. Photoelectrochemically generated polypyrrole films have been shown to protect CdX photoanodes from dissolution while permitting electron exchange with the electrolyte. Current effort is directed toward improving the film adhesion and optimizing the performance characteristics.

  7. An engineered class I transfer RNA with a class II tertiary fold.

    PubMed Central

    Nissan, T A; Oliphant, B; Perona, J J

    1999-01-01

    Structure-based engineering of the tertiary fold of Escherichia coli tRNA(Gln)2 has enabled conversion of this transfer RNA to a class II structure while retaining recognition properties of a class I glutamine tRNA. The new tRNA possesses the 20-nt variable stem-loop of Thermus thermophilus tRNA(Ser). Enlargement of the D-loop appears essential to maintaining a stable tertiary structure in this species, while rearrangement of a base triple in the augmented D-stem is critical for efficient glutaminylation. These data provide new insight into structural determinants distinguishing the class I and class II tRNA folds, and demonstrate a marked sensitivity of glutaminyl-tRNA synthetase to alteration of tRNA tertiary structure. PMID:10094311

  8. Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2016-05-01

    Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a k -dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a k -dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a Hg1 -x -yCdyMnxTe quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified k -space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

  9. Microbial toxicity of ionic species leached from the II-VI semiconductor materials, cadmium telluride (CdTe) and cadmium selenide (CdSe).

    PubMed

    Ramos-Ruiz, Adriana; Zeng, Chao; Sierra-Alvarez, Reyes; Teixeira, Luiz H; Field, Jim A

    2016-11-01

    This work investigated the microbial toxicity of soluble species that can potentially be leached from the II-VI semiconductor materials, cadmium telluride and cadmium selenide. The soluble ions tested included: cadmium, selenite, selenate, tellurite, and tellurate. Their toxicity towards the acetoclastic and hydrogen-consuming trophic groups in a methanogenic consortium as well as towards a bioluminescent marine bacterium, Aliivibrio fischeri (Microtox(®) test), was assessed. The acetoclastic methanogenic activity was the most affected as evidenced by the low 50% inhibiting concentrations (IC50) values obtained of 8.6 mg L(-1) for both cadmium and tellurite, 10.2 mg L(-1) for tellurate, and 24.1 mg L(-1) for selenite. Both tellurium oxyanions caused a strong inhibition of acetoclastic methanogenesis at low concentrations, each additional increment in concentration provided progressively less inhibition increase. In the case of the hydrogenotrophic methanogenesis, cadmium followed by selenite caused the greatest inhibition with IC50 values of 2.9 and 18.0 mg L(-1), respectively. Tellurite caused a moderate effect as evidenced by a 36.8% inhibition of the methanogenic activity at the highest concentration tested, and a very mild effect of tellurate was observed. Microtox(®) analyses showed a noteworthy inhibition of cadmium, selenite, and tellurite with 50% loss in bioluminescence after 30 min of exposure of 5.5, 171.1, and 458.6 mg L(-1), respectively. These results suggest that the leaching of cadmium, tellurium and selenium ions from semiconductor materials can potentially cause microbial toxicity. PMID:27494313

  10. Influence of the exchange-correlation functional on the quasi-harmonic lattice dynamics of II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Skelton, Jonathan M.; Tiana, Davide; Parker, Stephen C.; Togo, Atsushi; Tanaka, Isao; Walsh, Aron

    2015-08-01

    We perform a systematic comparison of the finite-temperature structure and properties of four bulk semiconductors (PbS, PbTe, ZnS, and ZnTe) predicted by eight popular exchange-correlation functionals from quasi-harmonic lattice-dynamics calculations. The performance of the functionals in reproducing the temperature dependence of a number of material properties, including lattice parameters, thermal-expansion coefficients, bulk moduli, heat capacities, and phonon frequencies, is evaluated quantitatively against available experimental data. We find that the phenomenological over- and under-binding characteristics of the local-density approximation and the PW91 and Perdew-Burke-Enzerhof (PBE) generalised-gradient approximation (GGA) functionals, respectively, are exaggerated at finite temperature, whereas the PBEsol GGA shows good general performance across all four systems. The Tao-Perdew-Staroverov-Scuseria (TPSS) and revTPSS meta-GGAs provide relatively small improvements over PBE, with the latter being better suited to calculating structural and dynamical properties, but both are considerably more computationally demanding than the simpler GGAs. The dispersion-corrected PBE-D2 and PBE-D3 functionals perform well in describing the lattice dynamics of the zinc chalcogenides, whereas the lead chalcogenides appear to be challenging for these functionals. These findings show that quasi-harmonic calculations with a suitable functional can predict finite-temperature structure and properties with useful accuracy, and that this technique can serve as a means of evaluating the performance of new functionals in the future.

  11. Los Alamos Controlled Air Incinerator for radioactive waste. Volume II. Engineering design reference manual

    SciTech Connect

    Koenig, R.A.; Draper, W.E.; Newmyer, J.M.; Warner, C.L.

    1982-10-01

    This two-volume report is a detailed design and operating documentation of the Los Alamos National Laboratory Controlled Air Incinerator (CAI) and is an aid to technology transfer to other Department of Energy contractor sites and the commercial sector. Volume I describes the CAI process, equipment, and performance, and it recommends modifications based on Los Alamos experience. It provides the necessary information for conceptual design and feasibility studies. Volume II provides descriptive engineering information such as drawings, specifications, calculations, and costs. It aids duplication of the process at other facilities.

  12. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    SciTech Connect

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai; Yan, Yanfa

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  13. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    SciTech Connect

    Chen, Zhiyi Zhao, Lukas; Krusin-Elbaum, Lia; Garcia, Thor Axtmann; Tamargo, Maria C.; Hernandez-Mainet, Luis C.; Deng, Haiming

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductor–TI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (∼6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  14. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Wan-Jian; Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Yan, Yanfa; Wei, Su-Huai

    2015-10-01

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  15. Cutaneous exposure scenarios for engineered nanoparticles used in semiconductor fabrication: a preliminary investigation of workplace surface contamination

    PubMed Central

    Shepard, Michele; Brenner, Sara

    2014-01-01

    Background: Numerous studies are ongoing in the fields of nanotoxicology and exposure science; however, gaps remain in identifying and evaluating potential exposures from skin contact with engineered nanoparticles in occupational settings. Objectives: The aim of this study was to identify potential cutaneous exposure scenarios at a workplace using engineered nanoparticles (alumina, ceria, amorphous silica) and evaluate the presence of these materials on workplace surfaces. Methods: Process review, workplace observations, and preliminary surface sampling were conducted using microvacuum and wipe sample collection methods and transmission electron microscopy with elemental analysis. Results: Exposure scenarios were identified with potential for incidental contact. Nanoparticles of silica or silica and/or alumina agglomerates (or aggregates) were identified in surface samples from work areas where engineered nanoparticles were used or handled. Conclusions: Additional data are needed to evaluate occupational exposures from skin contact with engineered nanoparticles; precautionary measures should be used to minimize potential cutaneous exposures in the workplace. PMID:25000112

  16. Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

    NASA Astrophysics Data System (ADS)

    Weinstein, B. A.; Lindberg, G. P.

    Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

  17. Influence of the exchange-correlation functional on the quasi-harmonic lattice dynamics of II-VI semiconductors.

    PubMed

    Skelton, Jonathan M; Tiana, Davide; Parker, Stephen C; Togo, Atsushi; Tanaka, Isao; Walsh, Aron

    2015-08-14

    We perform a systematic comparison of the finite-temperature structure and properties of four bulk semiconductors (PbS, PbTe, ZnS, and ZnTe) predicted by eight popular exchange-correlation functionals from quasi-harmonic lattice-dynamics calculations. The performance of the functionals in reproducing the temperature dependence of a number of material properties, including lattice parameters, thermal-expansion coefficients, bulk moduli, heat capacities, and phonon frequencies, is evaluated quantitatively against available experimental data. We find that the phenomenological over- and under-binding characteristics of the local-density approximation and the PW91 and Perdew-Burke-Enzerhof (PBE) generalised-gradient approximation (GGA) functionals, respectively, are exaggerated at finite temperature, whereas the PBEsol GGA shows good general performance across all four systems. The Tao-Perdew-Staroverov-Scuseria (TPSS) and revTPSS meta-GGAs provide relatively small improvements over PBE, with the latter being better suited to calculating structural and dynamical properties, but both are considerably more computationally demanding than the simpler GGAs. The dispersion-corrected PBE-D2 and PBE-D3 functionals perform well in describing the lattice dynamics of the zinc chalcogenides, whereas the lead chalcogenides appear to be challenging for these functionals. These findings show that quasi-harmonic calculations with a suitable functional can predict finite-temperature structure and properties with useful accuracy, and that this technique can serve as a means of evaluating the performance of new functionals in the future. PMID:26277159

  18. Conductivity in transparent oxide semiconductors

    NASA Astrophysics Data System (ADS)

    King, P. D. C.; Veal, T. D.

    2011-08-01

    Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the role of interstitial versus substitutional species are still somewhat open questions, it is one of the leading contenders for yielding unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case for conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total

  19. Chemical trends of the luminescence in wide band gap II 1-xMn xVI semimagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Benecke, C.; Busse, W.; Gumlich, H.-E.

    1990-04-01

    Time resolved emission and excitation spectroscopy is used to investigate the Mn correlated luminescence in wide band gap II-VI compounds, i.e. Zn 1-xMn xS, Cd 1-xMn xSe, Zn 1-xMn xTe and Cd 1-xMn xTe. Additional Information has been obtained with CdxZnyMnzTe( x+ y+ z=1) in checking the luminescence by variation of the ratio of the cations Cd and Zn. Generally speaking, at least two distinct emissions bands can be observed for each II 1- xMn xVI compound. One emissions band is attributed to the internal transition 4T 1(G)→ 6A 1(S) of the 3d 5 electron of the Mn 2+ on regular metal sites with energies of about ≈2 eV. The other emission band is found to occur in the near infrared range of about ≈1.3 eV. This emission band is tentatively interpreted as a transition of Mn 2+ ions on interstitial sites or in small Mn chalcogenide clusters, both interpretations assuming cubic symmetry. This model is supported by the existence of low energy excitation bands and by the great similarity of the shape of the two emission bands which lead to comparable Huang-Rhys factors and effective phonon energies. Also the established trend in the experimental data of the II-VI compounds under consideration confirm this interpretation. For both the IR and the yellow Mn 2+ center, the Racah parameters B and C and the crystal field parameter Dq are determined on the basis of experimental data. As a result, the energy of both the emission and the excitation bands is predominantly determined by the sorrounding anions. These bands shift to higher energies when the anions are changed in the fixed order: Te→Se→S. Regularly, there is also a spectral shift when Zn is replaced by Cd, which is smaller than the shift due to the variation of onions.

  20. Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

    NASA Technical Reports Server (NTRS)

    Gillies, D. C.; Su, C.-H.; Szofran, F. R.; Scripa, R. N.; Cobb, S. D.; Lehoczky, S. L.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

  1. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    NASA Astrophysics Data System (ADS)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  2. Covalent Attachment to GaP(110) - Engineering the Chemical Functionalization of a III-V Semiconductor

    NASA Astrophysics Data System (ADS)

    Bradley, A. J.; Ugeda, M. M.; Liu, Wenjun; Yu, Min; Tilley, T. Don; Pérez, Rubén; Neaton, Jeffrey B.; Crommie, M. F.

    2014-03-01

    With its 2.3 eV bulk bandgap, relatively high conduction band edge, and low chemical reactivity, the (110) surface of GaP is an excellent candidate for many UV and visible light applications, such as photo-catalysis and light-induced chemical reduction. However, the reconstruction and resulting charge transfer of the surface makes it difficult to covalently attach the required molecules. Indeed, very little work has been done to understand either covalent functionalization or passivation of this surface. Here we report on a Staudinger-type, thermally-driven covalent attachment of perfluorophenyl azide (pfpa) to GaP(110). We have studied the adsorption of pfpa molecules by means of high-resolution scanning tunneling microscopy and spectroscopy in combination with first principles calculations. We show a progression from a physisorbed state at room temperature to a covalently attached state after exposure to slightly higher temperatures (~ 50°C). The developed approach is expected to be valid for various other functional groups attached to the azide, as well as other III-V semiconductors.

  3. Analysis of Performance of Jet Engine from Characteristics of Components II : Interaction of Components as Determined from Engine Operation

    NASA Technical Reports Server (NTRS)

    Goldstein, Arthur W; Alpert, Sumner; Beede, William; Kovach, Karl

    1949-01-01

    In order to understand the operation and the interaction of jet-engine components during engine operation and to determine how component characteristics may be used to compute engine performance, a method to analyze and to estimate performance of such engines was devised and applied to the study of the characteristics of a research turbojet engine built for this investigation. An attempt was made to correlate turbine performance obtained from engine experiments with that obtained by the simpler procedure of separately calibrating the turbine with cold air as a driving fluid in order to investigate the applicability of component calibration. The system of analysis was also applied to prediction of the engine and component performance with assumed modifications of the burner and bearing characteristics, to prediction of component and engine operation during engine acceleration, and to estimates of the performance of the engine and the components when the exhaust gas was used to drive a power turbine.

  4. Defect engineering of complex semiconductor alloys: Cu2-2xMxO1-yXy

    NASA Astrophysics Data System (ADS)

    Lany, Stephan; Stevanovic, Vladan

    2013-03-01

    The electrical properties of semiconductors are generally controlled via doping, i.e., the incorporation of dilute concentrations of aliovalent impurity atoms, whereas the band structure properties (gap, effective masses, optical properties) are manipulated by alloying, i.e., the incorporation of much larger amounts of isovalent elements. Theoretical approaches usually address either doping or alloying, but rarely both problems at the same time. By combining defect supercell calculations, GW quasi-particle energy calculation, and thermodynamic modeling, we study the range of electrical and band structure properties accessible by alloying aliovalent cations (M = Mg, Zn, Cd) and isovalent anions (X = S, Se) in Cu2O. In order to extend dilute defect models to higher concentrations, we take into account the association/dissociation of defect pairs and complexes, as well as the composition dependence of the band gap and the band edge energies. Considering a composition window for the Cu2-2xMxO1-yXy alloys of 0 <= (x,y) <= 0.2, we predict a wide range of possible band gaps from 1.7 to 2.6 eV, and net doping concentrations between p = 1019 cm-3 and n = 1017cm-3, notably achieving type conversion from p- to n-type at Zn or Cd compositions around x = 0.1. This work is supported as part of the SunShot initiative by the U. S. Department of Energy, Office of Energy Efficiency and Renewable Energy under Contract No. DE-AC36-08GO28308 to NREL.

  5. AUTOMOTIVE DIESEL MAINTENANCE L. UNIT XII, PART I--MAINTAINING THE FUEL SYSTEM (PART II), CUMMINS DIESEL ENGINE, PART II--UNIT INSTALLATION (ENGINE).

    ERIC Educational Resources Information Center

    Human Engineering Inst., Cleveland, OH.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF THE OPERATION AND MAINTENANCE OF THE DIESEL ENGINE FUEL SYSTEM AND THE PROCEDURES FOR DIESEL ENGINE INSTALLATION. TOPICS ARE FUEL FLOW CHARACTERISTICS, PTG FUEL PUMP, PREPARATION FOR INSTALLATION, AND INSTALLING ENGINE. THE MODULE CONSISTS OF A SELF-INSTRUCTIONAL BRANCH…

  6. Repository Planning, Design, and Engineering: Part II-Equipment and Costing.

    PubMed

    Baird, Phillip M; Gunter, Elaine W

    2016-08-01

    Part II of this article discusses and provides guidance on the equipment and systems necessary to operate a repository. The various types of storage equipment and monitoring and support systems are presented in detail. While the material focuses on the large repository, the requirements for a small-scale startup are also presented. Cost estimates and a cost model for establishing a repository are presented. The cost model presents an expected range of acquisition costs for the large capital items in developing a repository. A range of 5,000-7,000 ft(2) constructed has been assumed, with 50 frozen storage units, to reflect a successful operation with growth potential. No design or engineering costs, permit or regulatory costs, or smaller items such as the computers, software, furniture, phones, and barcode readers required for operations have been included. PMID:26886768

  7. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  8. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  9. Semiconductor processing

    NASA Technical Reports Server (NTRS)

    1982-01-01

    The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

  10. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators

    NASA Technical Reports Server (NTRS)

    Larsson, Anders G.; Maserjian, Joseph

    1992-01-01

    Device approaches are investigated for optically addressed SLMs based on molecular-beam epitaxy (MBE) engineered III-V materials and structures. Strong photooptic effects can be achieved in periodically delta-doped multiple-quantum-well structures, but are still insufficient for high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. The asymmetric Fabry-Perot cavity approach is employed to permit extinction of light due to interference of light reflected from the front and back surfaces of the cavity. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror and the GaAs surface as the low reflectance mirror. High-contrast modulation is achieved using a low-power InGaAs/GaAs quantum well laser for the control signal.

  11. Strain Engineering of the Band Structure and Picosecond Carrier Dynamics of Single Semiconductor Nanowires Probed by Modulated Rayleigh Scattering Microscopy

    NASA Astrophysics Data System (ADS)

    Montazeri, Mohammad

    The band structure and carrier dynamics of GaAs, GaAs/GaP and InP semiconductor nanowires is explored using a variety of optical spectroscopy techniques including two newly developed techniques called Photomodulated and Transient Rayleigh scattering spectroscopy. The stress and electronic band structure of as-grown highly strained GaAs/GaP core/shell nanowire is studied via room temperature Raman scattering by phonons and low temperature photoluminescence spectroscopy. Raman measurements reveal the uniaxial nature of the shell-induced stress in the core GaAs nanowire with a significantly different degree of compression in the radial plane and axial direction of the nanowire. The uniaxial stress dramatically modifies the electronic band structure of the nanowire. Raman measurements predict that the shell-induced stress should shift the band gap of GaAs to higher energies by ~260 meV which is experimentally confirmed by low temperature photoluminescence spectroscopy. Furthermore, it is predicted that the uniaxial stress in the nanowire removes the degeneracy of the heavy and light hole valence bands at the zone center by ~100 meV. In order to probe the electronic band structure of single nanowires with high spatial and spectral resolution, the new technique of Photomodulated Rayleigh Scattering spectroscopy (PMRS) is introduced. We show that by photomodulating the dielectric function of the nanowire, the background-free and robust differential Rayleigh spectrum measures the band structure of the nanowire with exceptionally high energy resolution. PMRS measurements are performed on zincblende GaAs and zincblende and wurtzite InP nanowires at both room and low temperature. Furthermore, we show that the diameters of the nanowires can be extracted from the PMRS spectra with an uncertainty of only a few nanometers. By extending the PMRS spectroscopy into time domain, we introduce Transient Rayleigh Scattering spectroscopy (TRS) to study the ultrafast carrier dynamics and

  12. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

    NASA Astrophysics Data System (ADS)

    Wang, G. L.; Moeen, M.; Abedin, A.; Kolahdouz, M.; Luo, J.; Qin, C. L.; Zhu, H. L.; Yan, J.; Yin, H. Z.; Li, J. F.; Zhao, C.; Radamson, H. H.

    2013-09-01

    SiGe has been widely used for source/drain (S/D) engineering in pMOSFETs to enhance channel mobility. In this study, selective Si1-xGex growth (0.25 ≤ x ≤ 0.35) with boron concentration of 1-3 × 1020 cm-3 in the process for 22 nm node complementary metal-oxide semiconductor (CMOS) has been investigated and optimized. The growth parameters were carefully tuned to achieve deposition of high quality and highly strained material. The thermal budget was decreased to 800 °C to suppress dopant diffusion, to minimize Si loss in S/D recesses, and to preserve the S/D recess shape. Two layers of Si1-xGex were deposited: a bottom layer with high Ge content (x = 0.35) which filled the recess and a cap layer with low Ge content (x = 0.25) which was elevated in the S/D regions. The elevated SiGe cap layer was intended to be consumed during the Ni-silicidation process in order to avoid strain reduction in the channel region arising from strain relaxation in SiGe S/D. In this study, a kinetic gas model was also applied to predict the pattern dependency of the growth and to determine the epi-profile in different transistor arrays. The input parameters include growth temperature, partial pressures of reactant gases, and chip layout. By using this model, the number of test wafers for epitaxy experiments can be decreased significantly. When the epitaxy process parameters can be readily predicted by the model for epi-profile control in an advanced chip design, fast and cost-effective process development can be achieved.

  13. Semiconductor devices: solar cells. January 1975-May 1981 (citations from the International Information Service for the Physics and Engineering Communities Data Base). Report for Jan 75-May 81

    SciTech Connect

    Not Available

    1981-05-01

    The applications of semiconductor devices to solar cells and arrays are presented. Emphasis is placed on manufacturing processes, cell design, and performance. (Contains 235 citations fully indexed and including a title list.)

  14. Hyperentangled photon sources in semiconductor waveguides

    NASA Astrophysics Data System (ADS)

    Kang, Dongpeng; Helt, L. G.; Zhukovsky, Sergei V.; Torres, Juan P.; Sipe, J. E.; Helmy, A. S.

    2014-02-01

    We propose and analyze the performance of a technique to generate mode and polarization hyperentangled photons in monolithic semiconductor waveguides using two concurrent type-II spontaneous parametric down-conversion (SPDC) processes. These two SPDC processes are achieved by waveguide engineering which allows for simultaneous modal phase matching with the pump beam in a higher-order mode. Paired photons generated in each process are cross polarized and guided by different guiding mechanisms, which produces entanglement in both polarization and spatial mode. Theoretical analysis shows that the output quantum state has a high quality of hyperentanglement by spectral filtering with a bandwidth of a few nanometers, while off-chip compensation is not needed. This technique offers a path to realize an electrically pumped hyperentangled photon source.

  15. Engineering semiconductor hybrids for sensing

    NASA Astrophysics Data System (ADS)

    Gumbs, Godfrey; Iurov, Andrii; Huang, Danhong

    2016-06-01

    The effect of screening of the coulomb interaction between two layers of two-dimensional electrons, such as in graphene, by a highly doped semiconducting substrate is investigated. We employ the random-phase approximation to calculate the dispersion equation of this hybrid structure in order to determine the plasmon excitation spectrum. When an electric current is passed through a layer, the low-frequency plasmons in the layer may bifurcate into separate streams due to the current-driving effect. At a critical wave vector, determined by the separation between layers and their distance from the surface, their phase velocities may be in opposite directions and a surface plasmon instability leads to the emission of radiation. Applications to detectors and other electromagnetic devices exploiting nano-plasmonics are discussed.

  16. Molecularly Engineered Ru(II) Sensitizers Compatible with Cobalt(II/III) Redox Mediators for Dye-Sensitized Solar Cells.

    PubMed

    Wu, Kuan-Lin; Huckaba, Aron J; Clifford, John N; Yang, Ya-Wen; Yella, Aswani; Palomares, Emilio; Grätzel, Michael; Chi, Yun; Nazeeruddin, Mohammad Khaja

    2016-08-01

    Thiocyanate-free isoquinazolylpyrazolate Ru(II) complexes were synthesized and applied as sensitizers in dye-sensitized solar cells (DSCs). Unlike most other successful Ru sensitizers, Co-based electrolytes were used, and resulting record efficiency of 9.53% was obtained under simulated sunlight with an intensity of 100 mW cm(-2). Specifically, dye 51-57dht.1 and an electrolyte based on Co(phen)3 led to measurement of a JSC of 13.89 mA cm(-2), VOC of 900 mV, and FF of 0.762 to yield 9.53% efficiency. The improved device performances were achieved by the inclusion of 2-hexylthiophene units onto the isoquinoline subunits, in addition to lengthening the perfluoroalkyl chain on the pyrazolate chelating group, which worked to increase light absorption and decrease recombination effects when using the Co-based electrolyte. As this study shows, Ru(II) sensitizers bearing sterically demanding ligands can allow successful utilization of important Co electrolytes and high performance. PMID:27420188

  17. The discrimination of type I and type II collagen and the label-free imaging of engineered cartilage tissue.

    PubMed

    Su, Ping-Jung; Chen, Wei-Liang; Li, Tsung-Hsien; Chou, Chen-Kuan; Chen, Te-Hsuen; Ho, Yi-Yun; Huang, Chi-Hsiu; Chang, Shwu-Jen; Huang, Yi-You; Lee, Hsuan-Shu; Dong, Chen-Yuan

    2010-12-01

    Using excitation polarization-resolved second harmonic generation (SHG) microscopy, we measured SHG intensity as a function of the excitation polarization angle for type I and type II collagens. We determined the second order susceptibility (χ((2))) tensor ratios of type I and II collagens at each pixel, and displayed the results as images. We found that the χ((2)) tensor ratios can be used to distinguish the two types of collagen. In particular, we obtained χ(zzz)/χ(zxx) = 1.40 ± 0.04 and χ(xzx)/χ(zxx) = 0.53 ± 0.10 for type I collagen from rat tail tendon, and χ(zzz)/χ(zxx) = 1.14 ± 0.09 and χ(xzx)/χ(zxx) = 0.29 ± 0.11 for type II collagen from rat trachea cartilage. We also applied this methodology on the label-free imaging of engineered cartilage tissue which produces type I and II collagen simultaneously. By displaying the χ((2)) tensor ratios in the image format, the variation in the χ((2)) tensor ratios can be used as a contrast mechanism for distinguishing type I and II collagens. PMID:20875682

  18. Automotive Stirling engine Mod I design-review report. Volume II

    SciTech Connect

    Not Available

    1982-08-01

    Volume No. 2 of the Automotive Stirling Engine Mod I Design Review Report contains descriptions of the operating principles, performance requirements and design details of the auxiliaries and control systems for the MOD I Stirling engine system. These components and sub-systems have the following main functions: provide the required fuel and air flows for a well controlled combustion process, generating heat to the Stirling cycle; provide a driver acceptable method for controlling the power output of the engine; provide adequate lubrication and cooling water circulation; generate the electric energy required for engine and vehicle operation; provide a driver acceptable method for starting, stopping and monitoring the engine; and provide a guard system, that protects the engine at component or system malfunction.

  19. Semiconductor Cubing

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

  20. Semiconductor radiation detector

    DOEpatents

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  1. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  2. 76 FR 24872 - California State Nonroad Engine and Vehicle Pollution Control Standards; Authorization of Tier II...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-03

    ... applicable part: Construction equipment or vehicle means any internal combustion engine-powered machine... any internal combustion engine- powered machine primarily used in the commercial production and/or... not apply for purposes of this paragraph. \\2\\ See 59 FR 36969 (July 20, 1994), and regulations...

  3. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2009-05-19

    Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

  4. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  5. III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers

    NASA Astrophysics Data System (ADS)

    Chiu, YenTing

    This dissertation examines two types of III-V semiconductor quantum well systems: two-dimensional holes in GaAs, and mid-infrared Quantum Cascade lasers. GaAs holes have a much reduced hyperfine interaction with the nuclei due to the p-like orbital, resulting in a longer hole spin coherence time comparing to the electron spin coherence time. Therefore, holes' spins are promising candidates for quantum computing qubits, but the effective mass and the Lande g-factor, whose product determines the spin-susceptibility of holes, are not well known. In this thesis, we measure the effective hole mass through analyzing the temperature dependence of Shubnikov-de Haas oscillations in a relatively strong interacting two-dimensional hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose effective mass we measure to be ˜ 0.2 me. We then apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and the spin susceptibility of the two-dimensional hole system is deduced from the depopulation field. We also confine holes in closely spaced bilayer GaAs quantum wells to study the interlayer tunneling spectrum as a function of interlayer bias and in-plane magnetic field, in hope of probing the hole's Fermi contour. Quantum Cascade lasers are one of the major mid-infrared light sources well suited for applications in health and environmental sensing. One of the important factors that affect Quantum Cascade laser performance is the quality of the interfaces between the epitaxial layers. What has long been neglected is that interface roughness causes intersubband scattering, and thus affecting the relation between the lifetimes of the upper and lower laser states, which determines if population inversion is possible. We first utilize strategically added interface roughness in the laser design to engineer the intersubband scattering lifetimes. We further

  6. Recent Development of the Two-Stroke Engine. II - Design Features. 2; Design Features

    NASA Technical Reports Server (NTRS)

    Zeman, J.

    1945-01-01

    Completing the first paper dealing with charging methods and arrangements, the present paper discusses the design forms of two-stroke engines. Features which largely influence piston running are: (a) The shape and surface condition of the sliding parts. (b) The cylinder and piston materials. (c) Heat conditions in the piston, and lubrication. There is little essential difference between four-stroke and two-stroke engines with ordinary pistons. In large engines, for example, are always found separately cast or welded frames in which the stresses are taken up by tie rods. Twin piston and timing piston engines often differ from this design. Examples can be found in many engines of German or foreign make. Their methods of operation will be dealt with in the third part of the present paper, which also includes the bibliography. The development of two-stroke engine design is, of course, mainly concerned with such features as are inherently difficult to master; that is, the piston barrel and the design of the gudgeon pin bearing. Designers of four-stroke engines now-a-days experience approximately the same difficulties, since heat stresses have increased to the point of influencing conditions in the piston barrel. Features which notably affect this are: (a) The material. (b) Prevailing heat conditions.

  7. Decontamination and Decommissioning of the SPERT-II and SPERT-III reactors at the Idaho National Engineering Laboratory

    SciTech Connect

    Hine, R.E.

    1981-02-01

    This report describes the Decontamination and Decommissioning (D and D) of the SPERT-II and SPERT-III reactor facilities performed during the period June through September 1980 at the Idaho National Engineering Laboratory. It includes a detailed description of the D and D accomplished and the post-D and D condition of the reactor facilities. The report also serves to document the radiological condition of the facilities after D and D, the waste volume generated and its disposition, and the project cost and schedule.

  8. Three-dimensional modeling of diesel engine intake flow, combustion and emissions-II

    SciTech Connect

    Reitz, R.D.; Rutland, C.J.

    1993-09-01

    A three-dimensional computer code, KIVA, is being modified to include state-of-the-art submodels for diesel engine flow and combustion. Improved and/or new submodels which have already been implemented and previously reported are: Wall heat transfer with unsteadiness and compressibility, laminar-turbulent characteristic time combustion with unburned HC and Zeldo`vich NO{sub x}, and spray/wall impingement with rebounding and sliding drops. Progress on the implementation of improved spray drop drag and drop breakup models, the formulation and testing of a multistep kinetics ignition model and preliminary soot modeling results are described in this report. In addition, the use of a block structured version of KIVA to model the intake flow process is described. A grid generation scheme has been developed for modeling realistic (complex) engine geometries, and computations have been made of intake flow in the ports and combustion chamber of a two-intake-valve engine. The research also involves the use of the code to assess the effects of subprocesses on diesel engine performance. The accuracy of the predictions is being tested by comparisons with engine experiments. To date, comparisons have been made with measured engine cylinder pressure, temperature and heat flux data, and the model results are in good agreement with the experiments. Work is in progress that will allow validation of in-cylinder flow and soot formation predictions. An engine test facility is described that is being used to provide the needed validation data. Test results have been obtained showing the effect of injection rate and split injections on engine performance and emissions.

  9. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    SciTech Connect

    Rincón, C. Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M.; Henao, J. A.; Macías, M. A.

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  10. TIBER II/ETR final design report: Volume 1, 1. 0 Introduction; 2. 0 plasma engineering

    SciTech Connect

    Lee, J.D.

    1987-09-01

    This paper discusses the design of the TIBER II tokamak test reactor. Specific topics discussed are the physics objectives for Tiber, magnetics, baseline operating point, pulsed inductive operation, edge physics and impurity control, fueling, disruption control, vertical stability and impurity flow reversal. (LSP)

  11. 40 CFR Appendix II to Part 1045 - Duty Cycles for Propulsion Marine Engines

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... Speed terms are defined in 40 CFR part 1065. Percent speed values are relative to maximum test speed. 2... 40 CFR part 1065. Percent speed values are relative to maximum test speed. 2 Advance from one mode to...) AIR POLLUTION CONTROLS CONTROL OF EMISSIONS FROM SPARK-IGNITION PROPULSION MARINE ENGINES AND...

  12. Shaping the Future. Volume II: Perspectives on Undergraduate Education in Science, Mathematics, Engineering, and Technology.

    ERIC Educational Resources Information Center

    National Science Foundation, Washington, DC. Directorate for Education and Human Resources.

    This is a companion study to "Shaping the Future: New Expectations for Undergraduate Education in Science, Math, Engineering, and Technology (SMET)" (NSF 96-139). Both the original report and Volume 2 focus on a collaborative approach to developing and implementing strategies to improve undergraduate SMET education. The reports, compiled by the…

  13. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT II, MAINTAINING THE AIR SYSTEM--DETROIT DIESEL ENGINES.

    ERIC Educational Resources Information Center

    Human Engineering Inst., Cleveland, OH.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF THE OPERATION AND MAINTENANCE OF THE DIESEL ENGINE AIR SYSTEM. TOPICS ARE (1) OPERATION AND FUNCTION, (2) AIR CLEANER, (3) AIR SHUT-DOWN HOUSING, (4) EXHAUST SYSTEM, (5) BLOWER, (6) TURBOCHARGER, AND (7) TROUBLE-SHOOTING TIPS ON THE AIR SYSTEM. THE MODULE CONSISTS OF A…

  14. Materials and Fabrication Methods II. A Study Guide of the Science and Engineering Technician Curriculum.

    ERIC Educational Resources Information Center

    Lindberg, Andrew; Bay, Robert

    This study guide is part of a program of studies entitled Science and Engineering Technician (SET) Curriculum. The SET Curriculum integrates elements from the disciplines of chemistry, physics, mathematics, mechanical technology, and electronic technology with the objective of training technicians in the use of electronic instruments and their…

  15. Designing Preclinical Instruction for Psychomotor Skills (II)--Instructional Engineering: Task Analysis.

    ERIC Educational Resources Information Center

    Knight, G. William; And Others

    1994-01-01

    The first step in engineering the instruction of dental psychomotor skills, task analysis, is explained. A chart details the procedural, cognitive, desired-criteria, and desired-performance analysis of a single task, occlusal preparation for amalgam restoration with carious lesion. (MSE)

  16. Chemical Science and Technology II. A Study Guide of the Science and Engineering Technician Curriculum.

    ERIC Educational Resources Information Center

    Ballinger, Jack T.; Wolf, Lawrence J.

    This study guide is part of a program of studies entitled the Science and Engineering Technician (SET) Curriculum developed to provide a framework for training technicians in the use of electronic instruments and their applications. This interdisciplinary course of study integrates elements from the disciplines of chemistry, physics, mathematics,…

  17. Influence of non steady gravity on natural convection during micro-gravity solidification of semiconductors. I - Time scale analysis. II - Implications for crystal growth experiments

    NASA Technical Reports Server (NTRS)

    Griffin, P. R.; Motakef, S.

    1989-01-01

    Consideration is given to the influence of temporal variations in the magnitude of gravity on natural convection during unidirectional solidification of semiconductors. It is shown that the response time to step changes in g at low Rayleigh numbers is controlled by the momentum diffusive time scale. At higher Rayleigh numbers, the response time to increases in g is reduced because of inertial effects. The degree of perturbation of flow fields by transients in the gravitational acceleration on the Space Shuttle and the Space Station is determined. The analysis is used to derive the requirements for crystal growth experiments conducted on low duration low-g vehicles. Also, the effectiveness of sounding rockets and KC-135 aircraft for microgravity experiments is examined.

  18. Enhanced carrier multiplication in engineered quasi-type-II quantum dots

    PubMed Central

    Cirloganu, Claudiu M.; Padilha, Lazaro A.; Lin, Qianglu; Makarov, Nikolay S.; Velizhanin, Kirill A.; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  19. Enhanced carrier multiplication in engineered quasi-type-II quantum dots.

    PubMed

    Cirloganu, Claudiu M; Padilha, Lazaro A; Lin, Qianglu; Makarov, Nikolay S; Velizhanin, Kirill A; Luo, Hongmei; Robel, Istvan; Pietryga, Jeffrey M; Klimov, Victor I

    2014-01-01

    One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in quantum dots, although not sufficiently high to considerably boost the power output of practical devices. Here we demonstrate that thick-shell PbSe/CdSe nanostructures can show almost a fourfold increase in the CM yield over conventional PbSe quantum dots, accompanied by a considerable reduction of the CM threshold. These structures enhance a valence-band CM channel due to effective capture of energetic holes into long-lived shell-localized states. The attainment of the regime of slowed cooling responsible for CM enhancement is indicated by the development of shell-related emission in the visible observed simultaneously with infrared emission from the core. PMID:24938462

  20. Hydrogen in anion vacancies of semiconductors

    SciTech Connect

    Du, Mao-Hua; Singh, David J

    2009-01-01

    Density functional calculations show that, depending on the anion size, hydrogen in anion vacancies of various II-VI semiconductors can be either two-fold or four-fold coordinated, and has either amphoteric or shallow donor character. In general, the multi-coordination of hydrogen in an anion vacancy is the indication of an anionic H, H { ion, in the relatively ionic environment. In more covalent semiconductors, H would form a single cation-H bond in the anion vacancy.

  1. Engineering an intracellular pathway for major histocompatibility complex class II presentation of antigens.

    PubMed Central

    Wu, T C; Guarnieri, F G; Staveley-O'Carroll, K F; Viscidi, R P; Levitsky, H I; Hedrick, L; Cho, K R; August, J T; Pardoll, D M

    1995-01-01

    The presentation of antigenic peptides by major histocompatibility complex (MHC) class II molecules to CD4+ T cells is critical to the function of the immune system. In this study, we have utilized the sorting signal of the lysosomal-associated membrane protein LAMP-1 to target a model antigen, human papillomavirus 16 E7 (HPV-16 E7), into the endosomal and lysosomal compartments. The LAMP-1 sorting signal reroutes the antigen into the MHC class II processing pathway, resulting in enhanced presentation to CD4+ cells in vitro. In vivo immunization experiments in mice demonstrated that vaccinia containing the chimeric E7/LAMP-1 gene generated greater E7-specific lymphoproliferative activity, antibody titers, and cytotoxic T-lymphocyte activities than vaccinia containing the wild-type HPV-16 E7 gene. These results suggest that specific targeting of an antigen to the endosomal and lysosomal compartments enhances MHC class II presentation and vaccine potency. Images Fig. 2 Fig. 3 PMID:8524826

  2. Device Concepts in Semiconductor Spintronics

    NASA Astrophysics Data System (ADS)

    Molenkamp, Laurens W.

    Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices will be covered. For example, I will discuss resonant tunneling diodes (RTDs) fabricated from paramagnetic II-VI semiconductors that can be operated as a voltage controlled spin-switch. A quantum dot version of these RTDs exhibits, unexpectedly, remanent magnetism at zero external field, which we interpret as resulting from tunneling through a single magnetic polaron. In the ferromagnetic semiconductor (Ga, Mn)As we have observed a very large spin valve effect due to domain wall pinning at sub-10 nm sized constrictions. Furthermore, we have found a novel magnetoresistance effect in this material, dubbed tunnel anisotropic magnetoresistance (TAMR), which is due to the strongly (magneto-)anisotropic density of states in a ferromagnetic semiconductor. The effect leads to the observation of a spin valve-like behavior in tunnel structures containg a single ferromagnetic layer and also dominates the spin-valve signal obtained from structures containing two (Ga, Mn)As layers, where the effect may cause resistance changes of five orders of magnitude. Note from Publisher: This article contains the abstract only.

  3. Altitude-chamber Performance of British Roll-royce Nene II Engine IV : Effect of Operational Variables on Temperature Distribution at Combustion-chamber Outlets

    NASA Technical Reports Server (NTRS)

    Huntley, Sidney C

    1950-01-01

    Temperature surveys were made at the combustion-chamber outlets of a British Rolls-Royce Nene II engine. The highest mean nozzle-vane and mean gas temperatures were found to occur at a radius approximately 75% of the nozzle-vane length from the inner ring of the nozzle-vane assembly. Variations in engine speed, jet-nozzle area, simulated altitude, and simulated flight speed altered the temperature level but did not materially affect the pattern of radial temperature distribution.

  4. Engineered Mononuclear Variants in Bacillus cereus Metallo-β-lactamase BcII Are Inactive†

    PubMed Central

    Abriata, Luciano A.; González, Lisandro J.; Llarrull, Leticia I.; Tomatis, Pablo E.; Myers, William K.; Costello, Alison L.; Tierney, David L.; Vila, Alejandro J.

    2008-01-01

    Metallo-β-lactamases (MβLs) are zinc enzymes able to hydrolyze almost all β-lactam antibiotics, rendering them inactive, at the same time endowing bacteria high levels of resistance. The design of inhibitors active against all classes of MβLs has been hampered by their structural diversity and by the heterogeneity in metal content in enzymes from different sources. BcII is the metallo-β-lactamase from Bacillus cereus, which is found in both the mononuclear and dinuclear forms. Despite extensive studies, there is still controversy about the nature of the active BcII species. Here we have designed two mutant enzymes in which each one of the metal binding sites was selectively removed. Both mutants were almost inactive, despite preserving most of the structural features of each metal site. These results reveal that neither site isolated in the MβL scaffold is sufficient to render a fully active enzyme. This suggests that only the dinuclear species is active or that the mononuclear variants can be active only if aided by other residues that would be metal ligands in the dinuclear species. PMID:18652482

  5. Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO 2-GaAs metal-oxide-semiconductor devices

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Shripathi, T.; Banerji, P.

    2011-12-01

    This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin ( ˜2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO 2. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO 2/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.

  6. Marx generator engineering and assembly line technology for the PBFA II accelerator

    SciTech Connect

    Woolston, T.L.; Ives, H.C.

    1985-01-01

    The energy storage section of PBFA II requires 36 Marx generators. The Marx generator was designed to minimize the total number and types of parts in order to speed the assembly process and maintain simplicity. Some mechanical highlights include a shorting system, a quick connect spark gap fitting (using unmodified existing spark gaps), and an arragement allowing insertion and removal of the Marx from a filled oil tank. A rapid assembly system for the Marx generators was also designed and consists of (1) a trolley system, (2) an industrial manipulator, and (3) a gantry crane. Three persons can safely assemble at least two Marxes a week using the equipment. The system also will be used to expedite disassembly required for routine maintenance.

  7. Engineering functional artificial hybrid proteins between poplar peroxiredoxin II and glutaredoxin or thioredoxin

    SciTech Connect

    Rouhier, Nicolas . E-mail: nrouhier@scbiol.uhp-nancy.fr; Gama, Filipe; Wingsle, Gunnar; Gelhaye, Eric; Gans, Pierre; Jacquot, Jean-Pierre

    2006-03-24

    The existence of natural peroxiredoxin-glutaredoxin hybrid enzymes in several bacteria is in line with previous findings indicating that poplar peroxiredoxin II can use glutaredoxin as an electron donor. This peroxiredoxin remains however unique since it also uses thioredoxin with a quite good efficiency. Based on the existing fusions, we have created artificial enzymes containing a poplar peroxiredoxin module linked to glutaredoxin or thioredoxin modules. The recombinant fusion enzymes folded properly into non-covalently bound homodimers or homotetramers. Two of the three protein constructs exhibit peroxidase activity, a reaction where the two modules need to function together, but they also display enzymatic activities specific of each module. In addition, mass spectrometry analyses indicate that the Prx module can be both glutathiolated or overoxidized in vitro. This is discussed in the light of the Prx reactivity.

  8. Electron power loss in the (100) n channel of a Si metal-oxide-semiconductor field-effect transistor. II. Intersubband phonon scattering

    NASA Astrophysics Data System (ADS)

    Krowne, Clifford M.

    1983-05-01

    A simple matrix element is used to approximate electron-acoustic phonon scattering between different electron subbands i in the n channel of a (100) surface silicon MOSFET (metal-oxide-semiconductor field-effect transistor) device. This matrix element is used to determine the form of the electron power loss Pij in a i→j intersubband transition. P10 is calculated for TL =4.2 °K lattice temperature and electron temperatures Te between 4.4 °K and 18 °K when the electron inversion density Ninv =(3.76-10.0)×1011 cm-2 and an acceptor density NA =1014/cm3, and compared to Fang and Fowler's experimental data (which is put into the form of an experimental power loss Pexp). This is justified since the total power loss P due to intrasubband scattering as well as other Pij terms besides P10 is small. It is found that good to excellent fits between P10 and Pexp occur by adjusting the separation Δɛ10 between the lowest two circular subband edges. Δɛ10 is between 5.2 and 9.4 meV, and the electron-phonon deformation coupling constant D≊3.5 eV. The values of Δɛ10 obtained in such a manner roughly agree with Stern's theoretical self-consistent results. P10 is very sensitive to both Δɛ10 and to the effective mass for motion parallel to the surface m1 with the results implying that m1≊0.19m0 (m0=free electron rest mass). If one wants to find the contribution of intersubband scattering to P at higher TL, the formalism should still be applicable, although the approach could be much more complicated due to the addition of new Pij terms coming from both higher subbands and new scattering agents such as optical modes.

  9. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect

    Guo, Yijun; Rowland, Clare E; Schaller, Richard D; Vela, Javier

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  10. Seals/Secondary Fluid Flows Workshop 1997; Volume II: HSR Engine Special Session

    NASA Technical Reports Server (NTRS)

    Hendricks, Robert C. (Editor)

    2006-01-01

    The High Speed Civil Transport (HSCT) will be the largest engine ever built and operated at maximum conditions for long periods of time. It is being developed collaboratively with NASA, FAA, Boeing-McDonnell Douglas, Pratt & Whitney, and General Electric. This document provides an initial step toward defining high speed research (HSR) sealing needs. The overview for HSR seals includes defining objectives, summarizing sealing and material requirements, presenting relevant seal cross-sections, and identifying technology needs. Overview presentations are given for the inlet, turbomachinery, combustor and nozzle. The HSCT and HSR seal issues center on durability and efficiency of rotating equipment seals, structural seals and high speed bearing and sump seals. Tighter clearances, propulsion system size and thermal requirements challenge component designers.

  11. Tuning and synthesis of semiconductor nanostructures by mechanical compression

    SciTech Connect

    Fan, Hongyou; Li, Binsong

    2015-11-17

    A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

  12. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2010-12-14

    Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  13. Graded core/shell semiconductor nanorods and nanorod barcodes

    DOEpatents

    Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

    2013-03-26

    Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

  14. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT XIX, I--ENGINE TUNE-UP--CUMMINS DIESEL ENGINE, II--FRONT END SUSPENSION AND AXLES.

    ERIC Educational Resources Information Center

    Minnesota State Dept. of Education, St. Paul. Div. of Vocational and Technical Education.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF DIESEL ENGINE TUNE-UP PROCEDURES AND THE DESIGN OF FRONT END SUSPENSION AND AXLES USED ON DIESEL ENGINE EQUIPMENT. TOPICS ARE (1) PRE-TUNE-UP CHECKS, (2) TIMING THE ENGINE, (3) INJECTOR PLUNGER AND VALVE ADJUSTMENTS, (4) FUEL PUMP ADJUSTMENTS ON THE ENGINE (PTR AND PTG),…

  15. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT XI, PART I--MAINTAINING THE FUEL SYSTEM (PART I), CUMMINS DIESEL ENGINES, PART II--UNIT REPLACEMENT (ENGINE).

    ERIC Educational Resources Information Center

    Human Engineering Inst., Cleveland, OH.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF DIFFERENCES BETWEEN TWO AND FOUR CYCLE ENGINES, THE OPERATION AND MAINTENANCE OF THE DIESEL ENGINE FUEL SYSTEM, AND THE PROCEDURES FOR DIESEL ENGINE REMOVAL. TOPICS ARE (1) REVIEW OF TWO CYCLE AND FOUR CYCLE CONCEPT, (2) SOME BASIC CHARACTERISTICS OF FOUR CYCLE ENGINES,…

  16. Molecular Engineering, Photophysical and Electrochemical Characterizations of Novel Ru(II) and BODIPY Sensitizers for Mesoporous TiO2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Cheema, Hammad Arshad

    To realize the dream of a low carbon society and ensure the wide spread application of renewable energy sources such as solar energy, photovoltaic devices should be highly efficient, cost-effective and stable for at least 20 years. Dye sensitized solar cells (DSCs) are photovoltaic cells that mimic the natural photosynthesis. In a DSC, the dye absorbs photons from incident light and converts those photons to electric charges, which are then extracted to the outer circuit through semiconductor TiO2, whereas the mediator regenerates the oxidized dye. A sensitizer is the pivotal component in the device in terms of determining the spectral response, color, photocurrent density, long term stability, and thickness of a DSC. The breakthrough report by O'Regan and Gratzel in 1991 has garnered more than 18,673 citations (as of October 9, 2014), which indicates the immense scientific interest to better understand and improve the fundamental science of this technology. With the aforementioned in mind, this study has focused on the molecular engineering of novel sensitizers to provide a better understanding of structure-property relationships of novel sensitizers for DSCs. The characterization of sensitizers (HD-1-mono, HD-2-mono and HD-2) for photovoltaic applications showed that the photocurrent response of DSCs can be increased by using mono-ancillary ligand instead of bis-ancillary ligands, which is of great commercial value considering the difference in the molecular weights of both dyes. The results of this work were published in Journal of Materials Chemistry A (doi:10.1039/c4ta01942c) and ACS Applied Materials and Interfaces (doi: 10.1021/am502400b). Furthermore, structure-property relationships were investigated in Ru (II) sensitizers HL-41 and HL-42 in order to elucidate the steric effects of electron donating ancillary ligands on photocurrent and photovoltage, as discussed in Chapter 4. It was found that the electron donating group (ethoxy) ortho to the CH=CH spacer

  17. Effectiveness of Cooperative Learning (Jigsaw II) Method in Teaching English as a Foreign Language to Engineering Students (Case of Firat University, Turkey)

    ERIC Educational Resources Information Center

    Gomleksiz, M. N.

    2007-01-01

    The present study compares the effects of the cooperative jigsaw II method and traditional teacher-centred teaching method on improving vocabulary knowledge and active-passive voice in English as a foreign language for engineering students and the students' attitudes towards learning English. Jigsaw is a cooperative learning model that involves…

  18. Characterization of optoelectronic properties of mercury cadmium telluride and zinc oxide II-VI semiconductors for infrared and ultraviolet detector applications

    NASA Astrophysics Data System (ADS)

    Moazzami, Kaveh

    Infrared (IR) and Ultraviolet (UV) light detectors have numerous applications including thermal imaging and chemical and biological spectroscopy. In this work, key aspects of HgCdTe and ZnO semiconductor materials are studied in accordance to their importance to state of the art IR and UV detector technologies. The leading material technology for IR detectors today is the lattice matched HgCdTe alloy. The model for optical absorption in this material has not been reexamined after major improvements in HgCdTe material growth technology. Access to an accurate model for absorption coefficient of this material is important for understanding of detector behavior, where the degree of accuracy required continues to grow as detector structures continue to add complexity. In this work, the optical absorption coefficient of HgCdTe is studied in detail using theoretical bandstructure calculations, temperature dependent optical spectroscopy, and infrared spectroscopic ellipsometry. A new model for the optical absorption coefficient of this material as a function of composition and temperature is presented based on a proposed empirical relationship. A significant improvement in the prediction of photovoltaic detector spectral response is observed based on this proposed model. ZnO is emerging as an important material for short wavelength optoelectronic devices, and may have a major impact on high-performance UV detectors. In this work, the steady-state and time-resolved response of ZnO photoconductors are studied. A sharp turn on is observed in the UV for these photodetectors, corresponding to the bandgap energy of 3.4eV for the ZnO material. Photoconductive decay transients show a fast (nanoseconds) and slow (milliseconds) time constant that are attributed to minority carrier relaxation and trapping processes, respectively. Persistent photoconductivity was observed, with time constant on the order of minutes, in response to both visible and UV excitation and is attributed to

  19. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  20. Photorefractive Semiconductors and Applications

    NASA Technical Reports Server (NTRS)

    Chen, Li-Jen; Luke, Keung L.

    1993-01-01

    Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

  1. A cell-based immunobiosensor with engineered molecular recognition--Part II: Enzyme amplification systems.

    PubMed

    Page, D L; Pizziconi, V B

    1997-01-01

    Immune cells in vivo routinely perform highly selective immunosensing in blood and tissues as part of their normal immune surveillance functions. We have been investigating the potential of exploiting the immunosensing detection abilities of excitable immune cells (i.e. the mast cell) for the development of whole cell immunobiosensors. A key feature is that these immune cells can be selectively engineered to recognize specific antigens in vitro. In the presence of antigen, these cells undergo excitable activation responses which result in increased metabolism and the exocytosis of stored intracellular mediators. We have previously determined that mast cell metabolic responses can be thermally transduced in real time, thus indicating the possibility of whole cell thermoelectric immunobiosensing. In this work we investigated the use of enzyme amplification systems to enhance the direct transduction of immune cell responses to analyte. It was found that with appropriate enzymes, peak outputs occurred within approximately 5 min (4-20 times faster than without enzymes) and peak response magnitudes were up to nine-fold greater than without enzymes. PMID:9253152

  2. Engineering development of coal-fired high performance power systems, Phase II and III

    SciTech Connect

    1999-01-01

    The goals of the program are to develop a coal-fired high performance power generation system (HIPPS) that is capable of: thermal efficiency (HHV) {ge} 47%; NOx, SOx, and particulates {le} 10% NSPS (New Source Performance Standard) coal providing {ge} 65% of heat input; all solid wastes benign; cost of electricity {le} 90% of present plants. Phase 1, which began in 1992, focused on the analysis of various configurations of indirectly fired cycles and on technical assessments of alternative plant subsystems and components, including performance requirements, developmental status, design options, complexity and reliability, and capital and operating costs. Phase 1 also included preliminary R and D and the preparation of designs for HIPPS commercial plants approximately 300 MWe in size. This phase, Phase 2, involves the development and testing of plant subsystems, refinement and updating of the HIPPS commercial plant design, and the site selection and engineering design of a HIPPS prototype plant. Work reported herein is from: Task 2.1 HITAC Combustors; Task 2.2 HITAF Air Heaters; Task 6 HIPPS Commercial Plant Design Update.

  3. The use of the TOPAZ II systems with different conversion and engine systems

    NASA Astrophysics Data System (ADS)

    Ponomarev-Stepnoi, Nikolai N., Dr.; Ogloblin, Boris; Kirillov, E. Y.; Thome, Frank V.

    1995-01-01

    Increase of output electric power and use of heat released in nuclear fuel for thermal jet propulsion is promising for the future development of a bimodal reactor and use of the Topaz-2 Thermionic Space Nuclear Power System (TI-SNPS). In addition to the high-temperature thermionic conversion cycle, the application of low-temperature cycles, such as a machine-type cycle using the Stirling engine and a thermoelectric cycle, is being considered. The possibility of using the Topaz-2 system as a power source for thermal jet propulsion in bimodal operation is also being examined. For low-temperature cycles, the following data are obtained: output electric parameters, geometrical and weight characteristics as a function of thermal power released in the TFE fuel cores, and the relationship of generated total electric power to the total Topaz-2 system weight. The results obtained from this data make it possible to evaluate energy potentials when applying the high-temperature and low-temperature cycles Conference on alternative powere from space; Conference to the Topaz-2 system. The most likely values of specific impulse and propulsion force in relation to hydrogen flow rate in bimodal operation are shown.

  4. Engineering development of coal-fired high performance power systems, Phase II and III

    SciTech Connect

    1999-04-01

    The goals of the program are to develop a coal-fired high performance power generation system (HIPPS) that is capable of: thermal efficiency (HHV) {ge} 47%, NOx, SOx, and particulates {le} 10% NSPS (New Source Performance Standard) coal providing {ge} 65% of heat input, all solid wastes benign, and cost of electricity {le} 90% of present plants. Phase 1, which began in 1992, focused on the analysis of various configurations of indirectly fired cycles and on technical assessments of alternative plant subsystems and components, including performance requirements, developmental status, design options, complexity and reliability, and capital and operating costs. Phase 1 also included preliminary R and D and the preparation of designs for HIPPS commercial plants approximately 300 MWe in size. This phase, Phase 2, involves the development and testing of plant subsystems, refinement and updating of the HIPPS commercial plant design, and the site selection and engineering design of a HIPPS prototype plant. Work reported herein is from: Task 2.1 HITAC Combustors; Task 2.2 HITAF Air Heaters; Task 6 HIPPS Commercial Plant Design Update.

  5. Polymorph engineering of CuMO2 (M = Al, Ga, Sc, Y) semiconductors for solar energy applications: from delafossite to wurtzite.

    PubMed

    Scanlon, David O; Walsh, Aron

    2015-12-01

    The cuprous oxide based ternary delafossite semiconductors have been well studied in the context of p-type transparent conducting oxides. CuAlO2, CuGaO2 and CuInO2 represent a homologous series where the electronic properties can be tuned over a large range. The optical transparency of these materials has been associated with dipole forbidden transitions, which are related to the linear O-Cu-O coordination motif. The recent demonstration that these materials can be synthesized in tetrahedral structures (wurtzite analogues of the chalcopyrite lattice) opens up a new vista of applications. We investigate the underlying structure-property relationships (for Group 3 and 13 metals), from the perspective of first-principles materials modelling, towards developing earth-abundant photoactive metal oxides. All materials studied possess indirect fundamental band gaps ranging from 1 to 2 eV, which are smaller than their delafossite counterparts, although in all cases the difference between direct and indirect band gaps is less than 0.03 eV. PMID:26634726

  6. Polymorph engineering of CuMO2 (M = Al, Ga, Sc, Y) semiconductors for solar energy applications: from delafossite to wurtzite

    PubMed Central

    Scanlon, David O.; Walsh, Aron

    2015-01-01

    The cuprous oxide based ternary delafossite semiconductors have been well studied in the context of p-type transparent conducting oxides. CuAlO2, CuGaO2 and CuInO2 represent a homologous series where the electronic properties can be tuned over a large range. The optical transparency of these materials has been associated with dipole forbidden transitions, which are related to the linear O—Cu—O coordination motif. The recent demonstration that these materials can be synthesized in tetrahedral structures (wurtzite analogues of the chalcopyrite lattice) opens up a new vista of applications. We investigate the underlying structure–property relationships (for Group 3 and 13 metals), from the perspective of first-principles materials modelling, towards developing earth-abundant photoactive metal oxides. All materials studied possess indirect fundamental band gaps ranging from 1 to 2 eV, which are smaller than their delafossite counterparts, although in all cases the difference between direct and indirect band gaps is less than 0.03 eV. PMID:26634726

  7. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT XXVII, I--CATERPILLAR STARTING (PONEY) ENGINE (PART I), II--LEARNING ABOUT BRAKES (PART II).

    ERIC Educational Resources Information Center

    Minnesota State Dept. of Education, St. Paul. Div. of Vocational and Technical Education.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF THE CONSTRUCTION AND OPERATION OF DIESEL ENGINE STARTING ENGINES AND BRAKE SYSTEMS USED ON DIESEL POWERED VEHICLES. TOPICS ARE (1) GENERAL DESCRIPTION, (2) OPERATION, (3) COMBUSTION SPACE AND VALVE ARRANGEMENT (STARTING ENGINES), (4) TYPES OF BRAKES, AND (5) DOUBLE…

  8. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT XXVIII, I--CATERPILLAR STARTING (PONEY) ENGINE (PART II), II--UNDERSTANDING MORE ABOUT STARTING DEVICES.

    ERIC Educational Resources Information Center

    Human Engineering Inst., Cleveland, OH.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO DEVELOP AN UNDERSTANDING OF THE OPERATION AND MAINTENANCE OF DIESEL ENGINE STARTING ENGINES. TOPICS ARE (1) STARTING ENGINE MAGNETO (WICO), (2) MAGNETO MAINTENANCE, (3) SPARK PLUGS, (4) GENERAL DESCRIPTION (STARTING DEVICES), (5) OPERATING (STARTING DEVICES), (6) LUBRICATION (STARTING DEVICES), (7)…

  9. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, E.D.

    1992-07-21

    A method is disclosed for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B[sub x]O[sub y] are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T[sub m1] of the oxide of boron (T[sub m1]=723 K for boron oxide B[sub 2]O[sub 3]), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T[sub m2] of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm[sup 2]. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 [mu]m. 7 figs.

  10. Controlled growth of semiconductor crystals

    DOEpatents

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  11. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  12. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  13. Engine

    SciTech Connect

    Shin, H.B.

    1984-02-28

    An internal combustion engine has a piston rack depending from each piston. This rack is connected to a power output shaft through a mechanical rectifier so that the power output shaft rotates in only one direction. A connecting rod is pivotally connected at one end to the rack and at the other end to the crank of a reduced function crankshaft so that the crankshaft rotates at the same angular velocity as the power output shaft and at the same frequency as the pistons. The crankshaft has a size, weight and shape sufficient to return the pistons back into the cylinders in position for the next power stroke.

  14. Modulated Binary-Ternary Dual Semiconductor Heterostructures.

    PubMed

    Prusty, Gyanaranjan; Guria, Amit K; Mondal, Indranil; Dutta, Anirban; Pal, Ujjwal; Pradhan, Narayan

    2016-02-18

    A generic modular synthetic strategy for the fabrication of a series of binary-ternary group II-VI and group I-III-VI coupled semiconductor nano-heterostructures is reported. Using Ag2 Se nanocrystals first as a catalyst and then as sacrificial seeds, four dual semiconductor heterostructures were designed with similar shapes: CdSe-AgInSe2 , CdSe-AgGaSe2 , ZnSe-AgInSe2 , and ZnSe-AgGaSe2 . Among these, dispersive type-II heterostructures are further explored for photocatalytic hydrogen evolution from water and these are observed to be superior catalysts than the binary or ternary semi-conductors. Details of the chemistry of this modular synthesis have been studied and the photophysical processes involved in catalysis are investigated. PMID:26800297

  15. Mid-IR semiconductor lasers for chemical sensing

    NASA Technical Reports Server (NTRS)

    Hill, C. J.; Yang, R. Q.

    2003-01-01

    The development of mid-IR semiconductor diode lasers based on type-II interband cascade structures is presented. How these diode lasers can be developed to meet the requirements in chemical sensing applications is discussed.

  16. Mechanisms of current flow in metal-semiconductor ohmic contacts

    SciTech Connect

    Blank, T. V. Gol'dberg, Yu. A.

    2007-11-15

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

  17. Workshop report and presentations from the Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop

    NASA Astrophysics Data System (ADS)

    The Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop was held in Oak ridge, Tennessee, on November 2-3, 1987. It was to provide a forum for representatives of the national laboratories, DOE, and the semiconductor industry in which to discuss capabilities of the national laboratories which could contribute to the future competitiveness of the US semiconductor industry, to identify specific large and small projects at the national laboratories which would be of direct benefit to the semiconductor industry, and to find ways of implementing these projects. Numerous small projects were identified which would utilize unique capabilities of the national laboratories in advanced ion implantation, plasma processing (including electron cyclotron resonance plasmas), ion and cluster beam deposition, materials characterization, electronic packaging, and laser processing and deposition. Five large-scale candidate projects were identified in synchrotron x-ray lithography, silicon process integration, advanced materials processing science, process analysis and diagnostics, and ultra clean room engineering. The major obstacle to implementing these projects if the lack of appropriate funds to initiate and stimulate interactions between the national laboratories and the semiconductor industry. SEMATECH and the federal government are potential sources of seed funds for these projects. The Semiconductor Research Corporation is ideally suited to interface the semiconductor industry and the national laboratories for many of these interactions.

  18. EDITORIAL: Wide band gap semiconductors: present status, future prospects and frontiers

    NASA Astrophysics Data System (ADS)

    Soukiassian, Patrick G.

    2007-10-01

    Silicon became the material of the 20th century. However, during the last decades, new needs have driven research and development of a new class of semiconductors, the wide band gap materials, for high power, high temperature, high voltage and high frequency devices and sensors. For these applications, wide band gap semiconductors have figures of merit that are several orders of magnitude higher compared with conventional semiconductors. In addition, some of them also exhibit such interesting characteristics as (i) outstanding mechanical properties, (ii) resistance to radiation damage and/or (iii) biocompatibility, a very useful feature for interfacing with biology. In order to have wide band gap semiconducting materials that can be used for electronics, photonics, sensors, microelectromechanical devices and other high-tech applications, some of the mandatory requirements include: (i) the availability of high quality and large wafers, (ii) having p- and n-type doping capability providing usable Fermi level positions, (iii) understanding and controlling surfaces and interfaces, (iv) the ability to fabricate self-organized nanostructures and (v) the potential to achieve miniaturization and integration. The reviews in this Cluster Issue of Journal of Physics D: Applied Physics cover several of these important issues including growth, doping, engineering surfaces and interfaces, defects, nanotechnology and bio-functionalization. Achievements, progress and prospects are addressed, along with the difficulties, forming a good basis to evaluate the present status and future prospects of this promising and exciting field of science and technology.

  19. The Physics of Semiconductors

    NASA Astrophysics Data System (ADS)

    Grundmann, Marius

    The historic development of semiconductor physics and technology began in the second half of the 19th century. Interesting discussions of the early history of the physics and chemistry of semiconductors can be found in treatises of G. Busch [2] and Handel [3]. The history of semiconductor industry can be followedin the text of Morris [4] and Holbrook et al. [5]. In 1947, the realization of the transistor was the impetus to a fast-paced development that created the electronics and photonics industries. Products founded on the basis of semiconductor devices such as computers (CPUs, memories), optical-storage media (lasers for CD, DVD), communication infrastructure (lasers and photodetectors for optical-fiber technology, high frequency electronics for mobile communication), displays (thin film transistors, LEDs), projection (laser diodes) and general lighting (LEDs) are commonplace. Thus, fundamental research on semiconductors and semiconductor physics and its offspring in the form of devices has contributed largely to the development of modern civilization and culture.

  20. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  1. Repair of calvarial defects with customised tissue-engineered bone grafts II. Evaluation of cellular efficiency and efficacy in vivo.

    PubMed

    Schantz, Jan-Thorsten; Hutmacher, Dietmar Werner; Lam, Christopher Xu Fu; Brinkmann, Maik; Wong, Kit Mui; Lim, Thiam Chye; Chou, Ning; Guldberg, Robert Erling; Teoh, Swee Hin

    2003-01-01

    We have demonstrated in Part I of this study [see Schantz, J.-T., et al., Tissue Eng. 2003;9(Suppl. 1): S-113-S-126; this issue] that bone marrow-derived progenitor cells and calvarial osteoblasts could be successfully directed into the osteogenic lineage and cultured in three-dimensional (3-D) polycaprolactone (PCL) scaffolds. The objective of the second part of the study was to evaluate and to compare tissue engineered cell-polymer constructs using calvarial osteoblasts (group I) and mesenchymal progenitor cells (MPCs; group II) for the reconstruction of critical-size and three-dimensionally complex cranial defects. In 30 New Zealand White rabbits, bilateral parietal critical-size defects were created. On the basis of computed tomography scans, customized PCL scaffolds with precisely controlled microarchitecture were fabricated, using a rapid prototyping technology. Bone marrow-derived progenitor cells and osteoblasts were isolated and expanded in culture. Osteoblasts (group I) and mesenchymal progenitor cells (group II) were seeded in combination with a fibrin glue suspension into 40 PCL scaffolds. After incubating for 3 days in static culture, the PCL scaffold-cell constructs as well as nonseeded PCL scaffolds (control group) were implanted into 15-mm-diameter calvarial defects. Reconstruction of the cranium and bone formation were evaluated after 3 months. In vivo results indicated osseous tissue integration within the implant and functionally stable restoration of the calvarium. Islands of early bone formation could be observed in X-ray radiographs and in histological sections. Implants showed a high cell:ECM ratio and a dense vascular network. Mechanical testing of the reconstructed area revealed partial integration with the surrounding corticocancellous calvarial bone. The amount (area) of calcification, measured by clinical computed tomography, indicated that cell-seeded constructs measured about 60% more than unrepaired or unseeded scaffolds. Mechanical

  2. Wavefunction engineering: From quantum wells to near-infrared type-II colloidal quantum dots synthesized by layer-by-layer colloidal epitaxy.

    PubMed

    Li, J Jack; Tsay, James M; Michalet, Xavier; Weiss, Shimon

    2005-11-15

    We review the concept and the evolution of bandgap and wavefunction engineering, the seminal contributions of Dr. Chemla to the understanding of the rich phenomena displayed in epitaxially grown quantum confined systems, and demonstrate the application of these concepts to the colloidal synthesis of high quality type-II CdTe/CdSe quantum dots using successive ion layer adsorption and reaction chemistry. Transmission electron microscopy reveals that CdTe/CdSe can be synthesized layer by layer, yielding particles of narrow size distribution. Photoluminescence emission and excitation spectra reveal discrete type-II transitions, which correspond to energy lower than the type-I bandgap. The increase in the spatial separation between photoexcited electrons and holes as a function of successive addition of CdSe monolayers was monitored by photoluminescence lifetime measurements. Systematic increase in lifetimes demonstrates the high level of wavefunction engineering and control in these systems. PMID:22865949

  3. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  4. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  5. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  6. Materials Science and Device Physics of 2-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Hui

    Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this

  7. Conjugatable water-soluble Pt(II) and Pd(II) porphyrin complexes: novel nano- and molecular probes for optical oxygen tension measurement in tissue engineering.

    PubMed

    Giuntini, F; Chauhan, V M; Aylott, J W; Rosser, G A; Athanasiadis, A; Beeby, A; MacRobert, A J; Brown, R A; Boyle, R W

    2014-07-01

    Measurement of oxygen tension in compressed collagen sheets was performed using matrix-embedded optical oxygen sensors based on platinum(II) and palladium(II) porphyrins supported on polyacrylamide nanoparticles. Bespoke, fully water-soluble, mono-functionalised Pt(II) and Pd(II) porphyrin complexes designed for conjugation under mild conditions were obtained using microwave-assisted metallation. The new sensors display a linear response (1/τ vs. O2) to varying oxygen tension over a biologically relevant range (7.0 × 10(-4) to 2.7 × 10(-1) mM) in aqueous solutions; a behaviour that is maintained following conjugation to polyacrylamide nanoparticles, and following embedding of the nanosensors in compressed collagen sheets, paving the way to innovative approaches for real-time resolution of oxygen gradients throughout 3D matrices useful for tissue regeneration. PMID:24818569

  8. Broad interband semiconductor laser diodes

    NASA Astrophysics Data System (ADS)

    Tan, Chee Loon

    A semiconductor laser is a diode device that emits light via stimulated emission. Conventionally, light emitted from a semiconductor laser is spatially coherent or narrowband. The fundamental mechanism of stimulated emission process in general leads only to a single wavelength emission. However, there are some lasers emit light with a broad spectrum or different distinct wavelength subjected to various operating conditions such as external grating configuration with semiconductor laser, diode-pumped self-Q-switch fiber laser, ultrashort pulse excitation, photonic crystal fiber, ultrabroadband solid-state lasers, semiconductor optical amplifier-based multiwavelength tunable fiber lasers, nonlinear crystal, broadband semiconductor laser etc. This type of broadband laser is vital in many practical applications such as optical telecommunications, spectroscopy measurement, imaging technology, etc. Recently, an ultra-broadband semiconductor laser that utilizes intersubband optical transitions via quantum cascade configuration has been realized. Laser action with a Fabry-Perot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. More recently, broadband emission results from interband optical transitions via quantum-dot/dash nanostructures have been demonstrated in a simple p-i-n laser diode structure. To date, this latest approach offers the simplest design by proper engineering of quantized energy states as well as utilizing the high inhomogeneity of the dot/dash nanostructures, which is inherent from self-assembled growth technology. In this dissertation, modeling of semiconductor InGaAs/GaAs quantum-dot broadband laser utilizing the properties of inhomogeneous and homogeneous broadening effects on lasing spectral will be discussed, followed by a detail analysis of another type of broad interband semiconductor laser, which is InAs/InGaAlAs quantum-dash broadband laser. Based on the device characterization results

  9. AUTOMOTIVE DIESEL MAINTENANCE 1. UNIT XXX, I--CATERPILLAR DIESEL ENGINE MAINTENANCE SUMMARY, II--REIEWING FACTS ABOUT ALTERNATORS.

    ERIC Educational Resources Information Center

    Minnesota State Dept. of Education, St. Paul. Div. of Vocational and Technical Education.

    THIS MODULE OF A 30-MODULE COURSE IS DESIGNED TO PROVIDE A SUMMARY OF DIESEL ENGINE MAINTENANCE FACTORS AND A REVIEW OF DIESEL ENGINE ALTERNATOR OPERATION. THE SEVEN SECTIONS COVER DIESEL ENGINE TROUBLESHOOTING AND THE OPERATION, TESTING, AND ADJUSTING OF ALTERNATORS. THE MODULE CONSISTS OF A SELF-INSTRUCTIONAL BRANCH PROGRAMED TRAINING FILM…

  10. Explicit Finite Element Modeling of Multilayer Composite Fabric for Gas Turbine Engine Containment Systems, Phase II. Part 3; Material Model Development and Simulation of Experiments

    NASA Technical Reports Server (NTRS)

    Simmons, J.; Erlich, D.; Shockey, D.

    2009-01-01

    A team consisting of Arizona State University, Honeywell Engines, Systems & Services, the National Aeronautics and Space Administration Glenn Research Center, and SRI International collaborated to develop computational models and verification testing for designing and evaluating turbine engine fan blade fabric containment structures. This research was conducted under the Federal Aviation Administration Airworthiness Assurance Center of Excellence and was sponsored by the Aircraft Catastrophic Failure Prevention Program. The research was directed toward improving the modeling of a turbine engine fabric containment structure for an engine blade-out containment demonstration test required for certification of aircraft engines. The research conducted in Phase II began a new level of capability to design and develop fan blade containment systems for turbine engines. Significant progress was made in three areas: (1) further development of the ballistic fabric model to increase confidence and robustness in the material models for the Kevlar(TradeName) and Zylon(TradeName) material models developed in Phase I, (2) the capability was improved for finite element modeling of multiple layers of fabric using multiple layers of shell elements, and (3) large-scale simulations were performed. This report concentrates on the material model development and simulations of the impact tests.