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Sample records for extreme ultraviolet euv

  1. The Extreme Ultraviolet (EUV) Instrument for the MAVEN Mission

    NASA Technical Reports Server (NTRS)

    Chamberlin, Phillip C.

    2012-01-01

    The Mars Atmosphere and Volatile Evolution Mission (MAVEN) will explore the variability in the planet's upper atmosphere and ionosphere that is dominated by interactions with the sun, specifically the high-energy photons in the soft X-ray and extreme ultraviolet wavelengths as well as interactions with the solar wind. Scientists will use MAVEN data to determine the current loss rate of volatile compounds from the Mars atmosphere, then extrapolate back in time in order to give historical estimations of state of the Mars atmosphere and climate, its ability to sustain liquid water, and the potential for the Martian habitability. The EUV instrument is critical in measuring the Space Weather driver of this atmospheric variability. It will directly observe a three EUV wavelength ranges and their variability due to solar flares (time scales of seconds to hours) as well as active region evolution (months), which will then act as proxies for a model to determine the entire 0.1-200 nm solar spectrum at all times during the MAVEN mission. These EUV measurements and models results will compliment the other instruments that will provide direct in-situ as well as remote sensing observations of the Martian atmospheric response to this solar driver. This presentation will be an introduction of this instrument and its science measurements and goals to the larger community, as well as a status report on its progress.

  2. Four-mirror extreme ultraviolet (EUV) lithography projection system

    DOEpatents

    Cohen, Simon J; Jeong, Hwan J; Shafer, David R

    2000-01-01

    The invention is directed to a four-mirror catoptric projection system for extreme ultraviolet (EUV) lithography to transfer a pattern from a reflective reticle to a wafer substrate. In order along the light path followed by light from the reticle to the wafer substrate, the system includes a dominantly hyperbolic convex mirror, a dominantly elliptical concave mirror, spherical convex mirror, and spherical concave mirror. The reticle and wafer substrate are positioned along the system's optical axis on opposite sides of the mirrors. The hyperbolic and elliptical mirrors are positioned on the same side of the system's optical axis as the reticle, and are relatively large in diameter as they are positioned on the high magnification side of the system. The hyperbolic and elliptical mirrors are relatively far off the optical axis and hence they have significant aspherical components in their curvatures. The convex spherical mirror is positioned on the optical axis, and has a substantially or perfectly spherical shape. The spherical concave mirror is positioned substantially on the opposite side of the optical axis from the hyperbolic and elliptical mirrors. Because it is positioned off-axis to a degree, the spherical concave mirror has some asphericity to counter aberrations. The spherical concave mirror forms a relatively large, uniform field on the wafer substrate. The mirrors can be tilted or decentered slightly to achieve further increase in the field size.

  3. Spectroscopic measurements of ablation plasma generated with laser-driven intense extreme ultraviolet (EUV) light

    NASA Astrophysics Data System (ADS)

    Tanaka, N.; Hane, K.; Shikata, H.; Masuda, M.; Nagatomi, K.; Sunahara, A.; Yoshida, M.; Fujioka, S.; Nishimura, H.

    2016-03-01

    Material ablation by a focused Extreme ultraviolet (EUV) light is studied by comparing expanding ion properties and plasma parameters with laser ablation. The kinetic energy distributions of expanding ions from EUV and laser ablation showed different spectra implying different geometries of plasma expansion. The calculation results of plasma parameters showed that EUV energy is mostly deposited in high electron density region close to the solid density, while laser energy is deposited in low energy density region. Plasma parameters experimentally obtained from visible spectra did not show noticeable difference between EUV and laser ablation due to the corresponding low cut off density.

  4. Serendipitous EUV sources detected during the first year of the Extreme Ultraviolet Explorer right angle program

    NASA Technical Reports Server (NTRS)

    Mcdonald, K.; Craig, N.; Sirk, M. M.; Drake, J. J.; Fruscione, A.; Vallerga, J. V.; Malina, R. F.

    1994-01-01

    We report the detection of 114 extreme ultraviolet (EUV; 58 - 740 A) sources, of which 99 are new serendipitous sources, based on observations made with the imaging telescopes on board the Extreme Ultraviolet Explorer (EUVE) during the Right Angle Program (RAP). These data were obtained using the survey scanners and the Deep Survey instrument during the first year of the spectroscopic guest observer phase of the mission, from January 1993 to January 1994. The data set consists of 162 discrete pointings whose exposure times are typically two orders of magnitude longer than the average exposure times during the EUVE all-sky survey. Based on these results, we can expect that EUVE will serendipitously detect approximately 100 new EUV sources per year, or about one new EUV source per 10 sq deg, during the guest observer phase of the EUVE mission. New EUVE sources of note include one B star and three extragalactic objects. The B star (HR 2875, EUVE J0729 - 38.7) is detected in both the Lexan/B (approximately 100 A) and Al/Ti/C (approximately 200 A) bandpasses, and the detection is shown not to be a result of UV leaks. We suggest that we are detecting EUV and/or soft x rays from a companion to the B star. Three sources, EUVE J2132+10.1, EUVE J2343-14.9, and EUVE J2359-30.6 are identified as the active galactic nuclei MKN 1513, MS2340.9-1511, and 1H2354-315, respectively.

  5. Serendipitous EUV sources detected during the first year of the Extreme Ultraviolet Explorer right angle program

    NASA Astrophysics Data System (ADS)

    McDonald, K.; Craig, N.; Sirk, M. M.; Drake, J. J.; Fruscione, A.; Vallerga, J. V.; Malina, R. F.

    1994-11-01

    We report the detection of 114 extreme ultraviolet (EUV; 58 - 740 A) sources, of which 99 are new serendipitous sources, based on observations made with the imaging telescopes on board the Extreme Ultraviolet Explorer (EUVE) during the Right Angle Program (RAP). These data were obtained using the survey scanners and the Deep Survey instrument during the first year of the spectroscopic guest observer phase of the mission, from January 1993 to January 1994. The data set consists of 162 discrete pointings whose exposure times are typically two orders of magnitude longer than the average exposure times during the EUVE all-sky survey. Based on these results, we can expect that EUVE will serendipitously detect approximately 100 new EUV sources per year, or about one new EUV source per 10 sq deg, during the guest observer phase of the EUVE mission. New EUVE sources of note include one B star and three extragalactic objects. The B star (HR 2875, EUVE J0729 - 38.7) is detected in both the Lexan/B (approximately 100 A) and Al/Ti/C (approximately 200 A) bandpasses, and the detection is shown not to be a result of UV leaks. We suggest that we are detecting EUV and/or soft x rays from a companion to the B star. Three sources, EUVE J2132+10.1, EUVE J2343-14.9, and EUVE J2359-30.6 are identified as the active galactic nuclei MKN 1513, MS2340.9-1511, and 1H2354-315, respectively.

  6. Extreme ultraviolet (EUV) surface modification of polytetrafluoroethylene (PTFE) for control of biocompatibility

    NASA Astrophysics Data System (ADS)

    Ahad, Inam Ul; Butruk, Beata; Ayele, Mesfin; Budner, Bogusław; Bartnik, Andrzej; Fiedorowicz, Henryk; Ciach, Tomasz; Brabazon, Dermot

    2015-12-01

    Extreme ultraviolet (EUV) surface modification of polytetrafluoroethylene (PTFE) was performed in order to enhance the degree of biocompatibility. Polymer samples were irradiated by different number of EUV shots using a laser-plasma based EUV source in the presence of nitrogen gas. The physical and chemical properties of EUV modified PTFE samples were studied using Atomic Force Microscopy, X-ray photoelectron spectroscopy and water contact angle (WCA) methods. Pronounced wall type micro and nano-structures appeared on the EUV treated polymer surfaces resulting in increased surface roughness and hydrophobicity. Stronger cell adhesion and good cell morphology were observed on EUV modified surfaces by in-vitro cell culture studies performed using L929 fibroblasts.

  7. EUV SpectroPhotometer (ESP) in Extreme Ultraviolet Variability Experiment (EVE): Algorithms and Calibrations

    NASA Astrophysics Data System (ADS)

    Didkovsky, L.; Judge, D.; Wieman, S.; Woods, T.; Jones, A.

    2012-01-01

    The Extreme ultraviolet SpectroPhotometer (ESP) is one of five channels of the Extreme ultraviolet Variability Experiment (EVE) onboard the NASA Solar Dynamics Observatory (SDO). The ESP channel design is based on a highly stable diffraction transmission grating and is an advanced version of the Solar Extreme ultraviolet Monitor (SEM), which has been successfully observing solar irradiance onboard the Solar and Heliospheric Observatory (SOHO) since December 1995. ESP is designed to measure solar Extreme UltraViolet (EUV) irradiance in four first-order bands of the diffraction grating centered around 19 nm, 25 nm, 30 nm, and 36 nm, and in a soft X-ray band from 0.1 to 7.0 nm in the zeroth-order of the grating. Each band’s detector system converts the photo-current into a count rate (frequency). The count rates are integrated over 0.25-second increments and transmitted to the EVE Science and Operations Center for data processing. An algorithm for converting the measured count rates into solar irradiance and the ESP calibration parameters are described. The ESP pre-flight calibration was performed at the Synchrotron Ultraviolet Radiation Facility of the National Institute of Standards and Technology. Calibration parameters were used to calculate absolute solar irradiance from the sounding-rocket flight measurements on 14 April 2008. These irradiances for the ESP bands closely match the irradiance determined for two other EUV channels flown simultaneously: EVE’s Multiple EUV Grating Spectrograph (MEGS) and SOHO’s Charge, Element and Isotope Analysis System/ Solar EUV Monitor (CELIAS/SEM).

  8. Erosion resistant nozzles for laser plasma extreme ultraviolet (EUV) sources

    DOEpatents

    Kubiak, Glenn D.; Bernardez, II, Luis J.

    2000-01-04

    A gas nozzle having an increased resistance to erosion from energetic plasma particles generated by laser plasma sources. By reducing the area of the plasma-facing portion of the nozzle below a critical dimension and fabricating the nozzle from a material that has a high EUV transmission as well as a low sputtering coefficient such as Be, C, or Si, it has been shown that a significant reduction in reflectance loss of nearby optical components can be achieved even after exposing the nozzle to at least 10.sup.7 Xe plasma pulses.

  9. Re-Entry Survivability Risk Assessment of the Extreme Ultraviolet Explorer (EUVE)

    NASA Technical Reports Server (NTRS)

    O'Hara, Robin E.; Johnson, Nicholas L.

    2001-01-01

    A reentry analysis of the Extreme Ultraviolet Explorer (EUVE) spacecraft was performed using the Object Reentry Survival Analysis Tool (ORSAT) - Version 5.0. The analysis was done in response to a request by NASA Headquarters and Goddard Space Flight Center (GSFC) after a preliminary assessment using the NASA Johnson Space Center Debris Assessment Software (DAS) - Version 1.0 had shown that the EUVE reentry may produce a debris area greater than the limit set within the NASA Safety Standard 1740.14 guidelines. DAS predicted that an uncontrolled reentry of the EUVE spacecraft would result in a total casualty area of 12.41 sq m, which exceeds the 8 sq m limit set in the NASA standards and implies a potential human casualty risk of approximately 1 in 5300. The ORSAT model enabled a higher fidelity thermal analysis of the EUVE spacecraft, utilizing sophisticated material and thermal properties such as emissivity, heat of oxidation, thermal conductivity, and material thickness inputs, which provided a foundation for a more in depth analysis of the reentering objects. Due to the conservative nature of the DAS study, it was reasonable to run ORSAT for only the ten objects shown to survive in the original DAS analysis. The result of the ORSAT study was a reduced casualty area of only 5.95 sq m, well within NASA safety limits. With the risk to human life now acceptably low, NASA can avoid having to take mitigation measures and allow EUVE to reenter the Earth's atmosphere uncontrolled.

  10. VizieR Online Data Catalog: Second Extreme Ultra-Violet Explorer Catalog (2EUVE, 1997)

    NASA Astrophysics Data System (ADS)

    Bowyer, S.; Lampton, M.; Lewis, J.; Wu, X.; Jelinsky, P.; Malina, R. F.

    2001-04-01

    The Extreme Ultraviolet Explorer satellite was launched on June 7, 1992 from Cape Canaveral, Florida on a Delta II rocket. The payload contains three EUV scanning telescopes equipped with imaging detectors as well as a Deep Survey Spectrometer instrument which divides the light from a fourth telescope between an imaging detector and three EUV spectrometers. There are three source tables in this catalogue: - table1 lists count rates and positions of 514 objects detected during the all-sky survey. - table2 lists 35 sources detected by the deep survey of half the ecliptic plane; three deep survey objects are also detected in the all sky survey. - table3 lists 188 sources that have been detected in other ways, principally by deep exposures with the scanner telescopes as part of the Right Angle Program or by long exposures with the deep survey instrument; table3 includes right angle detections through December 24, 1994. Because the objects listed in table3 have been derived with a variety of instruments and exposure strategies, the flux limits and detection thresholds vary over a wide range; interested readers should consult the reference listed. Each table has an associated list of identified sources, id1, id2 and id3 (one EUVE source may by associated to 0, one or more counterparts); in nearly all cases they lie within 1 arcmin of the actual source position. The 534 objects in the "faint" part were detected jointly in the EUVE and in the ROSAT X-Ray Telescope 0.25keV band (50Å). This joint selection criterion permits use of a low count rate threshold in each survey, roughly 60% of the threshold used in the EUVE all-sky surveys, and 166 of the objects listed in the "faint" part are new EUV sources, appearing in neither the Second EUVE Source Catalog (tables 1 to 3) nor the ROSAT Wide Field Camera Second Catalog (J/MNRAS/274/1165) (7 data files).

  11. Carbon contamination of extreme ultraviolet (EUV) mask and its effect on imaging

    SciTech Connect

    Fan, Yu-Jen; Yankulin, Leonid; Antohe, Alin; Garg, Rashi; Thomas, Petros; Mbanaso, Chimaobi; Wuest, Andreas; Goodwin, Frank; Huh, Sungmin; Naulleau, Patrick; Goldlberg, Kenneth; Mochi, Iacopo; Denbeaux, Gregory

    2009-02-02

    Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask. Contaminated features were then inspected with a reticle scanning electron microscope (SEM) and printed with the SEMA TECH Berkeley Microfield-Exposure tool (MET) [1]. In addition, the mask was analyzed using the SEMA TECH Berkeley Actinic-Inspection tool (AIT) [2] to determine the effect of carbon contamination on the absorbing features and printing performance. To understand the contamination topography, simulations were performed based on calculated aerial images and resist parameters. With the knowledge of the topography, simulations were then used to predict the effect of other thicknesses of the contamination layer, as well as the imaging performance on printed features.

  12. AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

    NASA Astrophysics Data System (ADS)

    Malinowski, P. E.; Duboz, J.-Y.; John, J.; Sturdevant, C.; Das, J.; Derluyn, J.; Germain, M.; de Moor, P.; Minoglou, K.; Semond, F.; Frayssinet, E.; Hochedez, J.-F.; Giordanengo, B.; van Hoof, C.; Mertens, R.

    2010-04-01

    We report on the fabrication and characterization of solar blind Metal-Semiconductor-Metal (MSM) based photodetectors for use in the extreme ultraviolet (EUV) wavelength range. The devices were fabricated in the AlGaN-on- Si material system, with Aluminum Gallium Nitride (AlGaN) epitaxial layers grown on Si(111) by means of Molecular Beam Epitaxy. The detectors' IV characteristics and photoresponse were measured between 200 and 400 nm. Spectral responsivity was calculated for comparison with the state-of-the-art ultraviolet photodetectors. It reaches the order of 0.1 A/W at the cut-off wavelength of 360 nm, for devices with Au fingers of 3 μm width and spacing of 3 μm. The rejection ratio of visible radiation (400 nm) was more than 3 orders of magnitude. In the additional post-processing step, the Si substrate was removed locally under the active area of the MSM photodetectors using SF6-based Reactive Ion Etching (RIE). In such scheme, the backside illumination is allowed and there is no shadowing of the active layer by the metal electrodes, which is advantageous for the EUV sensitivity. Completed devices were assembled and wire-bonded in customized TO-8 packages with an opening. The sensitivity at EUV was verified at the wavelengths of 30.4 and 58.4 nm using a He-based beamline. AlGaN photodetectors are a promising alternative for highly demanding applications such as space science or modern EUV lithography. The backside illumination approach is suited in particular for large, 2D focal plane arrays.

  13. Laser plasma sources of soft x-rays and extreme ultraviolet (EUV) for application in science and technology

    NASA Astrophysics Data System (ADS)

    Bartnik, Andrzej; Wachulak, Przemysław; Jarocki, Roman; Kostecki, Jerzy; Szczurek, Mirosław; Adjei, Daniel; Ahad, Inam Ul; Ayele, Mesfin G.; Fok, Tomasz; Szczurek, Anna; Torrisi, Alfio; Wegrzyński, Łukasz; Fiedorowicz, Henryk

    2015-05-01

    Laser plasma sources of soft x-rays and extreme ultraviolet (EUV) developed in our laboratory for application in various areas of technology and science are presented. The sources are based on a laser-irradiated gas puff target approach. The targets formed by pulsed injection of gas under high-pressure are irradiated with nanosecond laser pulses from Nd:YAG lasers. We use commercial lasers generating pulses with time duration from 1ns to 10ns and energies from 0.5J to 10J at 10Hz repetition rate. The gas puff targets are produced using a double valve system equipped with a special nozzle to form a double-stream gas puff target which secures high conversion efficiency without degradation of the nozzle. The use of a gas puff target instead of a solid target makes generation of laser plasmas emitting soft x-rays and EUV possible without target debris production. The sources are equipped with various optical systems, including grazing incidence axisymmetric ellipsoidal mirrors, a "lobster eye" type grazing incidence multi-foil mirror, and an ellipsoidal mirror with Mo/Si multilayer coating, to collect soft x-ray and EUV radiation and form the radiation beams. In this paper new applications of these sources in various fields, including soft x-ray and EUV imaging in nanoscale, EUV radiography and tomography, EUV materials processing and modification of polymer surfaces, EUV photoionization of gases, radiobiology and soft x-ray contact microscopy are reviewed.

  14. Low thermal expansion material (LTEM) cleaning and optimization for extreme ultraviolet (EUV) blank deposition

    NASA Astrophysics Data System (ADS)

    Kadaksham, Arun J.; Teki, Ranganath; Godwin, Milton; House, Matt; Goodwin, Frank

    2013-04-01

    With the insertion of extreme ultraviolet lithography (EUVL) for high volume manufacturing (HVM) expected in the next few years, it is necessary to examine the performance of low thermal expansion materials (LTEMs) and assess industry readiness of EUV substrates. Owing to the high cost of LTEM, most of the development work so far has been done on fused silica substrates. Especially in developing cleaning technology prior to multilayer deposition, fused silica substrates have been used extensively, and defect trends and champion blank data have been reported using multilayer deposition data on fused silica substrates. In this paper, the response of LTEMs to cleaning processes prior to multilayer deposition is discussed. Cleaning processes discussed in this paper are developed using fused silica substrates and applied on LTEM substrates. The defectivity and properties of LTEM to fused silica are compared. Using the dense scan feature of the substrate inspection tool capable of detecting defects down to 35 nm SiO2 equivalent size and appropriate defect decoration techniques to decorate small defects on substrates to make them detectable, cleaning technologies that have the potential to meet high demands on LTEM for EUVL are developed and optimized.

  15. Profile reconstruction in extreme ultraviolet (EUV) scatterometry: modeling and uncertainty estimates

    NASA Astrophysics Data System (ADS)

    Gross, H.; Rathsfeld, A.; Scholze, F.; Bär, M.

    2009-10-01

    Scatterometry as a non-imaging indirect optical method in wafer metrology is also relevant to lithography masks designed for extreme ultraviolet lithography, where light with wavelengths in the range of 13 nm is applied. The solution of the inverse problem, i.e. the determination of periodic surface structures regarding critical dimensions (CD) and other profile properties from light diffraction patterns, is incomplete without knowledge of the uncertainties associated with the reconstructed parameters. The numerical simulation of the diffraction process for periodic 2D structures can be realized by the finite element solution of the two-dimensional Helmholtz equation. The inverse problem can be formulated as a nonlinear operator equation in Euclidean space. The operator maps the sought mask parameters to the efficiencies of diffracted plane wave modes. We employ a Gauß-Newton type iterative method to solve this operator equation and end up minimizing the deviation of the measured efficiency or phase shift values from the calculated ones. We apply our reconstruction algorithm for the measurement of a typical EUV mask composed of TaN absorber lines of about 80 nm height, a period in the range of 420 nm-840 nm, and with an underlying MoSi-multilayer stack of 300 nm thickness. Clearly, the uncertainties of the reconstructed geometric parameters essentially depend on the uncertainties of the input data and can be estimated by various methods. We apply a Monte Carlo procedure and an approximative covariance method to evaluate the reconstruction algorithm. Finally, we analyze the influence of uncertainties in the widths of the multilayer stack by the Monte Carlo method.

  16. Extreme ultraviolet and soft X-ray imaging with compact, table top laser plasma EUV and SXR sources

    NASA Astrophysics Data System (ADS)

    Wachulak, P. W.; Bartnik, A.; Kostecki, J.; Wegrzynski, L.; Fok, T.; Jarocki, R.; Szczurek, M.; Fiedorowicz, H.

    2015-12-01

    We present a few examples of imaging experiments, which were possible using a compact laser-plasma extreme ultraviolet (EUV) and soft X-ray (SXR) source, based on a double stream gas puff target. This debris-free source was used in full-field EUV imaging to obtain magnified images of test samples, ZnO nanofibers and images of the membranes coated with salt crystals. The source was also employed for SXR microscopy in the "water-window" spectral range using grazing incidence Wolter type-I objective to image test samples and to perform the initial studies of biological objects. Gas puff target EUV source, spectrally tuned for 13.5 nm wavelength with multilayer mirror and thin film filters, was also used in variety of shadowgraphy experiments to study the density of newly developed modulated density gas puff targets. Finally, the source was also employed in EUV tomography experiments of low density objects with the goal to measure and optimize the density of the targets dedicated to high harmonic generation.

  17. Spectral investigations of photoionized plasmas induced in atomic and molecular gases using nanosecond extreme ultraviolet (EUV) pulses

    SciTech Connect

    Bartnik, A.; Fiedorowicz, H.; Wachulak, P.

    2014-07-15

    In this paper, results of spectral investigations of low temperature photoionized plasmas, created by irradiation of gases with intense pulses of extreme ultraviolet (EUV) radiation from a laser-produced plasma (LPP) source, are presented. The LPP source was based on a double-stream KrXe/He gas-puff target irradiated with 4 ns/0.8 J/10 Hz Nd:YAG laser pulses. The most intense emission from the source spanned a relatively narrow spectral region λ ≈ 10–12 nm; however, spectrally integrated intensity at longer wavelengths was also significant. The EUV beam was focused on a gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of gases resulted in formation of photoionized plasmas emitting radiation in the EUV range. Radiation spectra, measured for plasmas produced in various gases, are dominated by emission lines, originating from single charged ions. Significant differences in spectral intensities and distributions between plasmas created in neon and molecular gases were observed.

  18. Chemical Effect of Dry and Wet Cleaning of the Ru Protective Layer of the Extreme ultraviolet (EUV) Lithography Reflector

    SciTech Connect

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Seo, Hyungtak; Somorjai, Gabor A.

    2009-04-10

    The authors report the chemical influence of cleaning of the Ru capping layer on the extreme ultraviolet (EUV) reflector surface. The cleaning of EUV reflector to remove the contamination particles has two requirements: to prevent corrosion and etching of the reflector surface and to maintain the reflectivity functionality of the reflector after the corrosive cleaning processes. Two main approaches for EUV reflector cleaning, wet chemical treatments [sulfuric acid and hydrogen peroxide mixture (SPM), ozonated water, and ozonated hydrogen peroxide] and dry cleaning (oxygen plasma and UV/ozone treatment), were tested. The changes in surface morphology and roughness were characterized using scanning electron microscopy and atomic force microscopy, while the surface etching and change of oxidation states were probed with x-ray photoelectron spectroscopy. Significant surface oxidation of the Ru capping layer was observed after oxygen plasma and UV/ozone treatment, while the oxidation is unnoticeable after SPM treatment. Based on these surface studies, the authors found that SPM treatment exhibits the minimal corrosive interactions with Ru capping layer. They address the molecular mechanism of corrosive gas and liquid-phase chemical interaction with the surface of Ru capping layer on the EUV reflector.

  19. In-flight estimation of gyro noise on the Upper Atmosphere Research Satellite (UARS) and Extreme Ultraviolet Explorer (EUVE) missions

    NASA Technical Reports Server (NTRS)

    Lee, M.; Crouse, P.; Harman, R.; Leid, Terry; Davis, W.; Underwood, S.

    1994-01-01

    This paper characterizes the low-frequency noise response of the Teledyne dry rotor inertial reference unit (DRIRU) gyroscopes on the Upper Atmosphere Research Satellite (UARS) and the Extreme Ultraviolet Explorer (EUVE). The accuracy of spacecraft attitude estimation algorithms that use gyro data for propagating the spacecraft attitude is sensitive to gyro noise. EUVE gyro data were processed to validate a single-axis gyro noise model, which is used onboard various spacecraft. The paper addresses the potential impact of temperature effects on the gyro noise model and the overall impact on attitude determination accuracy. The power spectral density (PSD) of the gyro noise is estimated from UARS in-flight data by Fast Fourier Transform (FFT). The role of actuator dynamics on the PSD function is also discussed.

  20. Extreme Ultraviolet Variability Experiment (EVE) Multiple EUV Grating Spectrographs (MEGS): Radiometric Calibrations and Results

    NASA Technical Reports Server (NTRS)

    Hock, R. A.; Woods, T. N.; Crotser, D.; Eparvier, F. G.; Woodraska, D. L.; Chamberlin, P. C.; Woods, E. C.

    2010-01-01

    The NASA Solar Dynamics Observatory (SDO), scheduled for launch in early 2010, incorporates a suite of instruments including the Extreme Ultraviolet Variability Experiment (EVE). EVE has multiple instruments including the Multiple Extreme ultraviolet Grating Spectrographs (MEGS) A, B, and P instruments, the Solar Aspect Monitor (SAM), and the Extreme ultraviolet SpectroPhotometer (ESP). The radiometric calibration of EVE, necessary to convert the instrument counts to physical units, was performed at the National Institute of Standards and Technology (NIST) Synchrotron Ultraviolet Radiation Facility (SURF III) located in Gaithersburg, Maryland. This paper presents the results and derived accuracy of this radiometric calibration for the MEGS A, B, P, and SAM instruments, while the calibration of the ESP instrument is addressed by Didkovsky et al. . In addition, solar measurements that were taken on 14 April 2008, during the NASA 36.240 sounding-rocket flight, are shown for the prototype EVE instruments.

  1. Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes

    NASA Astrophysics Data System (ADS)

    Rastegar, Abbas; House, Matthew; Tian, Ruahi; Laursen, Thomas; Antohe, Alin; Kearney, Patrick

    2014-04-01

    Multiple challenges, including the availability of a reliable high power source, defect free mask, and proper resist material, have forced extreme ultraviolet (EUV) lithography to be considered for sub-10 nm half-pitch nodes. Therefore, techniques such as phase shift masks (PSMs) or high numerical aperture (NA) lithography might be considered. Such techniques require thin EUV absorber materials to be optimized to reduce EUV mask shadowing effects. Despite the challenges in dry etching of Ni and finding proper chemistries with a high etch selectivity to suitable capping materials, we decided to examine the chemical stability of Ni for existing mask cleaning chemistries. Ni, after Ag, has the highest absorption in EUV light at λ = 13.5 nm, which makes it a proper candidate—in pure form or in mixing with other elements—for thin absorber film. Depending on the composition of the final material, proper integration schemes will be developed. We studied Ni stability in commonly used mask cleaning processes based on ammonium hydroxide/ hydrogen peroxide (APM) and water mixtures. Ni films deposited with an ion beam deposition technique with a thickness of 35 nm are sufficient to totally absorb EUV light at λ = 13.5 nm. Multiple cleanings of these Ni films resulted in Ni oxidation— confirmed by time-of-flight secondary ion mass spectroscopy (TOF-SIMS) analysis as NiO with thickness about 1.5 nm. Furthermore, Ni oxidation processes are self-limiting and oxide layer thickness did not increase with a further cleaning. A three minute exposure to sulfuric acid/hydrogen peroxide mixture (SPM) can remove NiO and Ni totally. To protect Ni film from etching by SPM chemistry a 3 nm Si capping was used on top of Ni film. However, Si capping was removed by APM chemistry and could not protect Ni film against SPM chemistry. TiO2 may be a very good capping layer for EUV optics but it is not suitable for EUV mask blanks and will be removed by APM chemistries.

  2. SOLAR-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2001-01-01

    This Monthly Progress Report covers the reporting period July 2001 of the Detailed Design and Development through Launch plus Thirty Days, Phase C/D, for selected components and subsystems of the Extreme Ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  3. SOLAR-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2001-01-01

    This Monthly Progress Report covers the reporting period through June 2001, Phase C/D, Detailed Design and Development Through Launch Plus Thirty Days, for selected components and subsystems of the Extreme ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  4. Solar-B Mission Extreme Ultraviolet (EUV) Imaging Spectrometer (EIS) Instrument Components

    NASA Technical Reports Server (NTRS)

    Doschek, George A.

    2002-01-01

    This Monthly Progress Report covers the reporting period August 2002 of the Detailed Design and Development through Launch plus Thirty Days, Phase C/D, for selected components and subsystems of the Extreme ultraviolet Imaging Spectrometer (EIS) instrument, hereafter referred to as EIS Instrument Components. This document contains the program status through the reporting period and forecasts the status for the upcoming reporting period.

  5. Solar Extreme Ultraviolet (EUV) Flare Observations and Findings from the Solar Dynamics Observatory (SDO) EUV Variability Experiment (EVE)

    NASA Astrophysics Data System (ADS)

    Woods, Thomas N.; Mason, James; Eparvier, Francis; Jones, Andrew

    2015-08-01

    There have been more than six thousand flares observed by the Solar Dynamics Observatory (SDO) since it launched in February 2010. The SDO mission is ideal for studying flares with 24/7 operations from its geosynchronous orbit (GEO) and with some 7000 TeraBytes of data taken so far. These data include more than 100,000,000 images of coronal full-disk images from the Atmospheric Imaging Assembly (AIA) and Dopplergrams and magnetograms from the Helioseismic and Magnetic Imager (HMI) and over 15,000,000 spectra of the solar EUV irradiance from the EUV Variability Experiment (EVE). This presentation will focus primarily on the EVE flare observations and a couple key flare findings involving both AIA and EVE observations. One of these findings includes the discovery of the EUV late phase that occur in about 15% of flares. The EUV late phase is the brightening of warm coronal emissions in the EUV that starts much later after the main X-ray bright phase, lasts up to several hours, and can emit more total energy than the EUV radiation during the X-ray phase. The combination of EVE and AIA observations have revealed that the cause for the EUV late phase is a second set of post-flare coronal loops that form much higher than the primary post-flare loops near the source of the flare. This second set of loops is much longer and thus has a much slower cooling rate; consequently, the radiation from these loops appears much later after the main X-ray flare phase. Another key finding is that the EVE solar EUV irradiance observations in cool coronal emissions have dimming during and following eruptive flare events, which is often associated with coronal mass ejections (CMEs). Furthermore, the magnitude of the EVE coronal dimming is consistent with the amount of mass lost, as observed near the flaring region by AIA. This result could be important for space weather operations because EVE’s near-realtime data products of its on-disk (Earth-facing) flare observations may provide an

  6. Extreme Ultraviolet Variability Experiment (EVE) Multiple EUV Grating Spectrographs (MEGS): Radiometric Calibrations and Results

    NASA Astrophysics Data System (ADS)

    Hock, R. A.; Chamberlin, P. C.; Woods, T. N.; Crotser, D.; Eparvier, F. G.; Woodraska, D. L.; Woods, E. C.

    2012-01-01

    The NASA Solar Dynamics Observatory (SDO), scheduled for launch in early 2010, incorporates a suite of instruments including the Extreme Ultraviolet Variability Experiment (EVE). EVE has multiple instruments including the Multiple Extreme ultraviolet Grating Spectrographs (MEGS) A, B, and P instruments, the Solar Aspect Monitor (SAM), and the Extreme ultraviolet SpectroPhotometer (ESP). The radiometric calibration of EVE, necessary to convert the instrument counts to physical units, was performed at the National Institute of Standards and Technology (NIST) Synchrotron Ultraviolet Radiation Facility (SURF III) located in Gaithersburg, Maryland. This paper presents the results and derived accuracy of this radiometric calibration for the MEGS A, B, P, and SAM instruments, while the calibration of the ESP instrument is addressed by Didkovsky et al. ( Solar Phys., 2010, doi:10.1007/s11207-009-9485-8). In addition, solar measurements that were taken on 14 April 2008, during the NASA 36.240 sounding-rocket flight, are shown for the prototype EVE instruments.

  7. New model of iron spectra in the extreme ultraviolet and application to SERTS and EUV observations: A solar active region and capella

    NASA Astrophysics Data System (ADS)

    Brickhouse, N. S.; Raymond, J. C.; Smith, B. W.

    1995-04-01

    We report new predictions for the EUV spectral emission of FeIX-FeXXIV, based on data now available from the Solar EUV Rocket Telescope and Spectrograph (SERTS) and the Extreme Ultraviolet Explorer (EUVE) spectrometers. The iron spectral emission model is the first result of a larger effort to revise the Raymond & Smith model and to update the atomic rates. We present here predicted emissivities for selected densities and temperatures applicable to various astrophysical plasmas. Comparisons of our predicted spectra with two recent observations provide important tests of the atomic data. They also test to some extent some basic assumptions of coronal emission codes: optically thin spectral lines and ionization equilibrium.

  8. New model of iron spectra in the extreme ultraviolet and application to SERTS and EUV observations: A solar active region and capella

    NASA Technical Reports Server (NTRS)

    Brickhouse, N. S.; Raymond, J. C.; Smith, B. W.

    1995-01-01

    We report new predictions for the EUV spectral emission of FeIX-FeXXIV, based on data now available from the Solar EUV Rocket Telescope and Spectrograph (SERTS) and the Extreme Ultraviolet Explorer (EUVE) spectrometers. The iron spectral emission model is the first result of a larger effort to revise the Raymond & Smith model and to update the atomic rates. We present here predicted emissivities for selected densities and temperatures applicable to various astrophysical plasmas. Comparisons of our predicted spectra with two recent observations provide important tests of the atomic data. They also test to some extent some basic assumptions of coronal emission codes: optically thin spectral lines and ionization equilibrium.

  9. The Extreme Ultraviolet Spectrograph Sounding Rocket Payload: Recent Modifications for Planetary Observations in the EUV/FUV

    NASA Technical Reports Server (NTRS)

    Slater, David C.; Stern, S. Alan; Scherrer, John; Cash, Webster; Green, James C.; Wilkinson, Erik

    1995-01-01

    We report on the status of modifications to an existing extreme ultraviolet (EUV) telescope/spectrograph sounding rocket payload for planetary observations in the 800 - 1200 A wavelength band. The instrument is composed of an existing Wolter Type 2 grazing incidence telescope, a newly built 0.4-m normal incidence Rowland Circle spectrograph, and an open-structure resistive-anode microchannel plate detector. The modified payload has successfully completed three NASA sounding rocket flights within 1994-1995. Future flights are anticipated for additional studies of planetary and cometary atmospheres and interstellar absorption. A detailed description of the payload, along with the performance characteristics of the integrated instrument are presented. In addition, some preliminary flight results from the above three missions are also presented.

  10. The Effects of Oxygen Plasma on the Chemical Composition and Morphology of the Ru Capping Layer of the Extreme Ultraviolet (EUV) Mask Blanks

    SciTech Connect

    Belau, Leonid; Park, Jeong Y.; Liang, Ted; Somorjai, Gabor A.

    2008-06-07

    Contamination removal from extreme ultraviolet (EUV) mask surfaces is one of the most important aspects to improve reliability for the next generation of EUV lithography. We report chemical and morphological changes of the ruthenium (Ru) mask surface after oxygen plasma treatment using surface sensitive analytical methods: X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Chemical analysis of the EUV masks shows an increase in the subsurface oxygen concentration, Ru oxidation and surface roughness. XPS spectra at various photoelectron takeoff angles suggest that the EUV mask surface was covered with chemisorbed oxygen after oxygen plasma treatment. It is proposed that the Kirkendall effect is the most plausible mechanism that explains the Ru surface oxidation. The etching rate of the Ru capping layer by oxygen plasma was estimated to be 1.5 {+-} 0.2 {angstrom}/min, based on TEM cross sectional analysis.

  11. The Extreme Ultraviolet Explorer mission

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.

    1991-01-01

    The Extreme Ultraviolet Explorer (EUVE) is a NASA astronomy mission which will operate in the 70-760A spectral band. The science payload consists of three grazing incidence scanning telescopes and an EUV spectrometer/deep survey instrument. An overview of the planned mission profile is given, and the instrumentation which comprises the science payload is discussed. The EUVE is scheduled for launch in late August 1991.

  12. Experience from the in-flight calibration of the Extreme Ultraviolet Explorer (EUVE) and Upper Atmosphere Research Satellite (UARS) fixed head star trackers (FHSTs)

    NASA Technical Reports Server (NTRS)

    Lee, Michael

    1995-01-01

    Since the original post-launch calibration of the FHSTs (Fixed Head Star Trackers) on EUVE (Extreme Ultraviolet Explorer) and UARS (Upper Atmosphere Research Satellite), the Flight Dynamics task has continued to analyze the FHST performance. The algorithm used for inflight alignment of spacecraft sensors is described and the equations for the errors in the relative alignment for the simple 2 star tracker case are shown. Simulated data and real data are used to compute the covariance of the relative alignment errors. Several methods for correcting the alignment are compared and results analyzed. The specific problems seen on orbit with UARS and EUVE are then discussed. UARS has experienced anomalous tracker performance on an FHST resulting in continuous variation in apparent tracker alignment. On EUVE, the FHST residuals from the attitude determination algorithm showed a dependence on the direction of roll during survey mode. This dependence is traced back to time tagging errors and the original post launch alignment is found to be in error due to the impact of the time tagging errors on the alignment algorithm. The methods used by the FDF (Flight Dynamics Facility) to correct for these problems is described.

  13. Extreme ultraviolet (EUV) solar spectral irradiance (SSI) for ionospheric application - history and contemporary state-of-art

    NASA Astrophysics Data System (ADS)

    Schmidtke, G.; Jacobi, Ch.; Nikutowski, B.; Erhardt, Ch.

    2014-11-01

    After a historical survey of space related EUV measurements in Germany and the role of Karl Rawer in pursuing this work, we describe present developments in EUV spectroscopy and provide a brief outlook on future activities. The group of Karl Rawer has performed the first scientific space project in Western Europe on 19th October 1954. Then it was decided to include the field of solar EUV spectroscopy in ionospheric investigations. Starting in 1957 an intensified development of instrumentation was going on to explore solar EUV radiation, atmospheric airglow and auroral emissions until the institute had to stop space activities in the early nineteen-eighties. EUV spectroscopy was continued outside of the institute during eight years. This area of work was supported again by the institute developing the Auto-Calibrating Spectrometers (SolACES) for a mission on the International Space Station (ISS). After more than six years in space the instrument is still in operation. Meanwhile the work on the primary task also to validate EUV data available from other space missions has made good progress. The first results of validating those data and combine them into one set of EUV solar spectral irradiance are very promising. It will be recommended for using it by the science and application community. Moreover, a new low-cost type of an EUV spectrometer is presented for monitoring the solar EUV radiation. It shall be further developed for providing EUV-TEC data to be applied in ionospheric models replacing the Covington index F10.7. Applying these data for example in the GNSS signal evaluation a more accurate determination of GNSS receiver positions is expected for correcting the propagation delays of navigation signals traveling through the ionosphere from space to earth. - Latest results in the field of solar EUV spectroscopy are discussed, too.

  14. Laser plasma sources of soft x-rays and extreme ultraviolet (EUV) for technology, biomedical, and metrology applications

    NASA Astrophysics Data System (ADS)

    Bartnik, Andrzej; Fiedorowicz, Henryk; Jarocki, Roman; Kostecki, Jerzy; Rakowski, Rafał; Sawicka, Magdalena; Szczurek, Mirosław

    2008-12-01

    In this paper some results of investigations concerning interaction of EUV radiation with inorganic and organic materials were presented. Samples of different materials were irradiated with a 10 Hz laser - plasma EUV source based on a gas puff target. The source was equipped with grazing incidence and multilayer collecting mirrors. The grazing incidence collector was used in experiments concerning surface modification and micromachining of different materials. The micromachining experiments were performed for different polymers that were irradiated through a fine metal grid as a contact mask. For fluoropolymers, EUV radiation with fluence of 10 mJ/cm2 was enough for efficient photo-etching. The photo-etching speed was maximal for polytetrafluoroethylene (PTFE) reaching 30nm per shot. It was shown that using such a method microstructures with high aspect ratio could be produced. Experiments connected with surface modification were performed either with organic or inorganic materials. Different kinds of surface structures were obtained depending on irradiated materials and irradiation parameters. The Mo/Si collector together with argon plasma was used for obtaining a quasi-monochromatic radiation for EUV microscopy and some metrological applications.

  15. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    2000-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  16. Method for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, Glenn D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

  17. Wolter-Schwarzschild optics for the extreme-ultraviolet - The Berkeley stellar spectrometer and the EUV Explorer

    NASA Technical Reports Server (NTRS)

    Malina, R. F.; Bowyer, S.; Finley, D.; Cash, W.

    1979-01-01

    The design, fabrication and performance of two Wolter-Schwarzschild grazing incidence optics are described. Both telescopes have been figured by single point diamond turning and have achieved better than 15-arcsec on-axis imaging. The telescope for the stellar spectrometer is an f/10 Type II system with an effective area of 225 sq cm at 250 A and 300 cm2 at 500 A. The primary has a maximum diameter of 38 cm and was fabricated in three elements. The copper-plated aluminum substrate was diamond turned; following nickel plating, the surface was polished and coated with evaporated gold. The performance during a sounding rocket flight is discussed. The prototype telescope for the Extreme Ultraviolet Explorer is an f/1.24 Type I system with an effective field of view of 5.0-deg diameter. The telescope has a maximum diameter of 40 cm and was fabricated as a single element. The aluminum substrate is to be diamond turned; the nickel plated surface will be polished and electroplated with gold. The design choice and defocusing optimization aimed at maximizing the field of view and number of image pixels is examined.

  18. A preliminary estimate of the EUVE cumulative distribution of exposure time on the unit sphere. [Extreme Ultra-Violet Explorer

    NASA Technical Reports Server (NTRS)

    Tang, C. C. H.

    1984-01-01

    A preliminary study of an all-sky coverage of the EUVE mission is given. Algorithms are provided to compute the exposure of the celestial sphere under the spinning telescopes, taking into account that during part of the exposure time the telescopes are blocked by the earth. The algorithms are used to give an estimate of exposure time at different ecliptic latitudes as a function of the angle of field of view of the telescope. Sample coverage patterns are also given for a 6-month mission.

  19. Extreme Ultraviolet Explorer Science Operation Center

    NASA Technical Reports Server (NTRS)

    Wong, G. S.; Kronberg, F. A.; Meriwether, H. D.; Wong, L. S.; Grassi, C. L.

    1993-01-01

    The EUVE Science Operations Center (ESOC) is a satellite payload operations center for the Extreme Ultraviolet Explorer project, located on the Berkeley campus of the University of California. The ESOC has the primary responsibility for commanding the EUVE telescopes and monitoring their telemetry. The ESOC is one of a very few university-based satellite operations facilities operating with NASA. This article describes the history, operation, and advantages of the ESOC as an on-campus operations center.

  20. Extreme ultraviolet lithography machine

    DOEpatents

    Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

    2000-01-01

    An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

  1. Imaging the magnetosphere in the extreme ultraviolet

    NASA Technical Reports Server (NTRS)

    Chiu, Y. T.

    1993-01-01

    A final report on research on magnetosphere imaging in the extreme ultraviolet is presented. The objectives of the research contract can be summarized in three related items: (1) investigate the feasibility of the EUV imaging concept by using Lockheed in-situ ion measurement data; (2) investigate the technical resources required to make scientific interpretations of such EUV images by end-to-end simulations of the imaging concept; and (3) construct and test the key element for EUV magnetosphere imaging, the multilayer mirror with normal-incidence reflectance designed for the selected solar resonance line.

  2. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1985-01-01

    The Far Ultraviolet imager (FUVI) was flown on the Aries class sounding rocket 24.015, producing outstanding results. The diffuse extreme ultraviolet (EUV) background spectrometer which is under construction is described. It will be launched on the Black Brant sounding rocket flight number 27.086. Ongoing design studies of a high resolution spectrometer are discussed. This instrument incorporates a one meter normal incidence mirror and will be suitable for an advanced Spartan mission.

  3. Photoresist composition for extreme ultraviolet lithography

    DOEpatents

    Felter, T. E.; Kubiak, G. D.

    1999-01-01

    A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 .mu.m using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods. A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

  4. Initial results from the extreme ultraviolet explorer

    NASA Technical Reports Server (NTRS)

    Bowyer, S.; Malina, R. F.

    1993-01-01

    Data obtained during the first five months of calibration and science operation of the Extreme Ultraviolet Explorer (EUVE) are presented. Spectra of an extragalactic object were obtained; the object is detectable to wavelenghts longer than 100 A, demonstrating that extragalactic EUV astronomy is possible. Spectra of a hot white dwarf, and a late-type star in quiescence and flaring are shown as examples of the type of spectrographic data obtainable with EUVE. Other objects for which broad band photometric mode data have been obtained and analyzed include an RS CVn star and several late-type stars. The backgrounds in the EUVE detectors are quite low and the character of the diffuse astronomical EUV background has been investigated using these very low rates. Evidence is presented showing that, contrary to previously published reports, EUVE is about three times more sensitive than the English Wide Field Camera in the short wavelength bandpass covered by both instruments. Only limited information has been extracted from the longer bandpasses coered only by EUVE. Nonetheless, the brightest EUV source in the sky, a B star, has been discovered and is detected only in these longer bandpasses.

  5. The Extreme Ultraviolet Explorer - Overview and calibration

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.; Vallerga, John V.; Jelinsky, Pat; Vedder, Peter W.; Bowyer, Stuart

    1990-01-01

    The Extreme Ultraviolet Explorer (EUVE) is a NASA-funded astronomy mission that will operate in the 70 to 760 A band. The science payload, which has been designed and built by the Space Sciences Laboratory at the University of California, Berkeley, consists of three grazing incidence scanning telescopes and an EUV spectrometer/deep survey instrument. This paper gives details of the planned mission profile and an overview of the instrumentation that the science payload comprises. Topics such as the thermal design, contamination control, and details of the electronics system are discussed. Finally, the results of the calibration of the various subsystems that make up the EUVE instrumentation are reviewed, and the calibration plan for the integrated EUVE instruments is discussed.

  6. Extreme ultraviolet spectral irradiance measurements since 1946

    NASA Astrophysics Data System (ADS)

    Schmidtke, G.

    2015-03-01

    In the physics of the upper atmosphere the solar extreme ultraviolet (EUV) radiation plays a dominant role controlling most of the thermospheric/ionospheric (T/I) processes. Since this part of the solar spectrum is absorbed in the thermosphere, platforms to measure the EUV fluxes became only available with the development of rockets reaching altitude levels exceeding 80 km. With the availability of V2 rockets used in space research, recording of EUV spectra started in 1946 using photographic films. The development of pointing devices to accurately orient the spectrographs toward the sun initiated intense activities in solar-terrestrial research. The application of photoelectric recording technology enabled the scientists placing EUV spectrometers aboard satellites observing qualitatively strong variability of the solar EUV irradiance on short-, medium-, and long-term scales. However, as more measurements were performed more radiometric EUV data diverged due to the inherent degradation of the EUV instruments with time. Also, continuous recording of the EUV energy input to the T/I system was not achieved. It is only at the end of the last century that there was progress made in solving the serious problem of degradation enabling to monitore solar EUV fluxes with sufficient radiometric accuracy. The data sets available allow composing the data available to the first set of EUV data covering a period of 11 years for the first time. Based on the sophisticated instrumentation verified in space, future EUV measurements of the solar spectral irradiance (SSI) are promising accuracy levels of about 5% and less. With added low-cost equipment, real-time measurements will allow providing data needed in ionospheric modeling, e.g., for correcting propagation delays of navigation signals from space to earth. Adding EUV airglow and auroral emission monitoring by airglow cameras, the impact of space weather on the terrestrial T/I system can be studied with a spectral terrestrial

  7. Discovery of a new white dwarf in a binary system (EUVE 0720-317) in the Extreme Ultraviolet Explorer survey and implications for the late stages of stellar evolution

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Thorstensen, John R.

    1994-01-01

    A new precataclysmic binary is identified in the Extreme Ultraviolet Explorer (EUVE) all-sky survey. The bright source EUVE 0720-317 shows a hot hydrogen-rich white dwarf optical continuum with overlying narrow Balmer-line emission. Using high signal-to-noise ratio spectroscopy in the 4100-6700 A range, we identify a late-type companion and find a 1.3d periodic modulation in the emission-line velocities and strengths. This is the signature of Feige 24-type close binary systems. We determine the components' spectral types (DAO and dM0-2), orbital velocities (K(sub DAO) = 104 +/- 12 km/s, K(sub dM) = 96 +/- 7 km/s), and systemic velocity (gamma = 15 +/- 12 km/s). A first estimate of the white dwarf gravitational redshift, gamma(sub g) = 45 +/- 20 km/s, and theoretical mass-radius relationships imply R(sub DAO) = 0.010-0.016 solar radius and M(sub DAO) = 0.55-0.90 solar mass. The orbital inclination is therefore i greater than or equal to 52 deg, consistent with the large amplitude variations found in H-alpha equivalent widths that imply i greater than or equal to 42 deg. We show that the discovery of new close WD + MS binary systems in extreme ultraviolet (EUV) sky surveys has important implications for theory of common-envelope evolution, in particular for the predicted close binary birthrate and orbital and stellar parameters.

  8. Extreme ultraviolet photoionization of aldoses and ketoses

    NASA Astrophysics Data System (ADS)

    Shin, Joong-Won; Dong, Feng; Grisham, Michael E.; Rocca, Jorge J.; Bernstein, Elliot R.

    2011-04-01

    Gas phase monosaccharides (2-deoxyribose, ribose, arabinose, xylose, lyxose, glucose galactose, fructose, and tagatose), generated by laser desorption of solid sample pellets, are ionized with extreme ultraviolet photons (EUV, 46.9 nm, 26.44 eV). The resulting fragment ions are analyzed using a time of flight mass spectrometer. All aldoses yield identical fragment ions regardless of size, and ketoses, while also generating same ions as aldoses, yields additional features. Extensive fragmentation of the monosaccharides is the result the EUV photons ionizing various inner valence orbitals. The observed fragmentation patterns are not dependent upon hydrogen bonding structure or OH group orientation.

  9. Extreme Ultraviolet Explorer. Long look at the next window

    NASA Technical Reports Server (NTRS)

    Maran, Stephen P.

    1991-01-01

    The Extreme Ultraviolet Explorer (EUVE) will map the entire sky to determine the existence, direction, brightness, and temperature of thousands of objects that are sources of so-called extreme ultraviolet (EUV) radiation. The EUV spectral region is located between the x-ray and ultraviolet regions of the electromagnetic spectrum. From the sky survey by EUVE, astronomers will determine the nature of sources of EUV light in our galaxy, and infer the distribution of interstellar gas for hundreds of light years around the solar system. It is from this gas and the accompanying dust in space that new stars and solar systems are born and to which evolving and dying stars return much of their material in an endless cosmic cycle of birth, death, and rebirth. Besides surveying the sky, astronomers will make detailed studies of selected objects with EUVE to determine their physical properties and chemical compositions. Also, they will learn about the conditions that prevail and the processes at work in stars, planets, and other sources of EUV radiation, maybe even quasars. The EUVE mission and instruments are described. The objects that EUVE will likely find are described.

  10. The Second Extreme Ultraviolet Explorer Right Angle Program Catalog

    NASA Astrophysics Data System (ADS)

    Christian, D. J.; Craig, N.; Cahill, W.; Roberts, B.; Malina, R. F.

    1999-05-01

    We present the detection of 235 extreme ultraviolet sources, of which 169 are new detections, using the Extreme Ultraviolet Explorer's (EUVE) Right Angle Program (RAP) data. This catalog includes observations since the first EUVE RAP catalog (1994 January) and covers 17% of the sky. The EUVE RAP uses the all-sky survey telescopes (also known as ``scanners''), mounted at right angles to the Deep Survey and spectrometer instruments, to obtain photometric data in four wavelength bands centered at ~100 Å (Lexan/B), ~200 Å (Al/Ti/C), ~400 Å (Ti/Sb/Al), and ~550 Å (Sn/SiO). This allows the RAP to accumulate data serendipitously during pointed spectroscopic observations. The long exposure times possible with RAP observations provide much greater sensitivity than the all-sky survey. We present EUVE source count rates and probable source identifications from the available catalogs and literature. The source distribution is similar to previous extreme ultraviolet (EUV) catalogs with 2% early-type stars, 45% late-type stars, 8% white dwarfs, 6% extragalactic, 24% with no firm classification, and 15% with no optical identification. We also present 36 detections of early-type stars that are probably the result of non-EUV radiation. We have detected stellar flares from approximately 12 sources, including: EUVE J0008+208, M4 star G32-6 (EUVE J0016+198), a new source EUVE J0202+105, EUVE J0213+368, RS CVn V711 Tau (EUVE J0336+005), BY Draconis type variable V837 Tau (EUVE J0336+259), the new K5 binary EUVE J0725-004, EUVE J1147+050, EUVE J1148-374, EUVE J1334-083 (EQ Vir), EUVE J1438-432 (WT 486/487), EUVE J1808+297, and the M5.5e star G208-45 (EUVE J1953+444). We present sample light curves for the brighter sources.

  11. Absolute sensitivity calibration of extreme ultraviolet photoresists

    SciTech Connect

    Jones, Juanita; Naulleau, Patrick P.; Gullikson, Eric M.; Aquila, Andrew; George, Simi; Niakoula, Dimitra

    2008-05-16

    One of the major challenges facing the commercialization of extreme ultraviolet (EUV) lithography remains simultaneously achieving resist sensitivity, line-edge roughness, and resolution requirement. Sensitivity is of particular concern owing to its direct impact on source power requirements. Most current EUV exposure tools have been calibrated against a resist standard with the actual calibration of the standard resist dating back to EUV exposures at Sandia National Laboratories in the mid 1990s. Here they report on an independent sensitivity calibration of two baseline resists from the SEMATECH Berkeley MET tool performed at the Advanced Light Source Calibrations and Standards beamline. The results show the baseline resists to be approximately 1.9 times faster than previously thought based on calibration against the long standing resist standard.

  12. Modeling extreme ultraviolet suppression of electrostatic analyzers

    SciTech Connect

    Gershman, Daniel J.; Zurbuchen, Thomas H.

    2010-04-15

    In addition to analyzing energy-per-charge ratios of incident ions, electrostatic analyzers (ESAs) for spaceborne time-of-flight mass spectrometers must also protect detectors from extreme ultraviolet (EUV) photons from the Sun. The required suppression rate often exceeds 1:10{sup 7} and is generally established in tests upon instrument design and integration. This paper describes a novel technique to model the EUV suppression of ESAs using photon ray tracing integrated into SIMION, the most commonly used ion optics design software for such instruments. The paper compares simulation results with measurements taken from the ESA of the Mass instrument flying onboard the Wind spacecraft. This novel technique enables an active inclusion of EUV suppression requirements in the ESA design process. Furthermore, the simulation results also motivate design rules for such instruments.

  13. Nanometer scale imaging with table top extreme ultraviolet sources

    NASA Astrophysics Data System (ADS)

    Wachulak, Przemyslaw W.; Sandberg, Richard L.; Isoyan, Artak; Urbanski, Lukasz; Bartnik, Andrzej; Bartels, Randy A.; Menoni, Carmen S.; Fiedorowicz, Henryk; Rocca, Jorge J.; Marconi, Mario C.

    2010-12-01

    Decreasing the illumination wavelength allows to improve the spatial resolution in photon-based imaging systems and enables a nanometer-scale spatial resolution. Due to a significant interest in nanometer-scale spatial resolution imaging short wavelengths from extreme ultraviolet (EUV) region are often used. A few examples of various imaging techniques, such as holography, zone plate EUV microscopy, computer generated hologram EUV reconstruction, lens-less diffraction imaging and generalized Talbot self-imaging will be presented utilizing coherent and incoherent EUV sources. Some of these EUV imaging techniques lead to the high spatial resolution, better than 50nm in a very short exposure time. The techniques, presented herein, have potential to be used in actinic mask inspection for EUV lithography, mask-less lithographic processes in the nanofabrication, in material science or biology.

  14. Absolute dosimetry for extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Berger, Kurt W.; Campiotti, Richard H.

    2000-06-01

    The accurate measurement of an exposure dose reaching the wafer on an extreme ultraviolet (EUV) lithographic system has been a technical challenge directly applicable to the evaluation of candidate EUV resist materials and calculating lithography system throughputs. We have developed a dose monitoring sensor system that can directly measure EUV intensities at the wafer plane of a prototype EUV lithographic system. This sensor system, located on the wafer stage adjacent to the electrostatic chuck used to grip wafers, operates by translating the sensor into the aerial image, typically illuminating an 'open' (unpatterned) area on the reticle. The absolute signal strength can be related to energy density at the wafer, and thus used to determine resist sensitivity, and the signal as a function of position can be used to determine illumination uniformity at the wafer plane. Spectral filtering to enhance the detection of 13.4 nm radiation was incorporated into the sensor. Other critical design parameters include the packaging and amplification technologies required to place this device into the space and vacuum constraints of a EUV lithography environment. We describe two approaches used to determine the absolute calibration of this sensor. The first conventional approach requires separate characterization of each element of the sensor. A second novel approach uses x-ray emission from a mildly radioactive iron source to calibrate the absolute response of the entire sensor system (detector and electronics) in a single measurement.

  15. Apollo-Soyuz test project Extreme Ultraviolet Telescope MA-083. [stellar spectra

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1978-01-01

    Follow-on studies to the Apollo-Soyuz Extreme Ultraviolet Telescope experiment (MA-083) include analyses of individual target stars or classes of stars, not only with regard to the EUV data but also in connection with theoretical models and observations in other parts of the spectrum. Topics discussed include: observations of SS Cygni, Proxima Centauri, HZ 43, and Feige 24; computer searches for new EUV sources; Sirius: models and inferences; EUV emission from a hot gas; and the diffuse EUV background.

  16. The Extreme Ultraviolet Explorer mission - Overview and initial results

    NASA Technical Reports Server (NTRS)

    Haisch, B.; Bowyer, S.; Malina, R. F.

    1993-01-01

    The history of extreme ultraviolet (EUV) astronomy is briefly reviewed, and an overview of the Extreme Ultraviolet Explorer mission, launched into a near-earth (550 km) orbit on June 7, 1992, is presented. First, the principal objective of the mission are summarized. The instrumentation and operation of the mission are then described, with particular attention given to the sky survey instruments, the deep survey instrument, and the spectrometers. The discussion also covers the current view of the interstellar medium, early results from the mission, and future prospects for EUV astronomy.

  17. 'EXTREME ULTRAVIOLET WAVES' ARE WAVES: FIRST QUADRATURE OBSERVATIONS OF AN EXTREME ULTRAVIOLET WAVE FROM STEREO

    SciTech Connect

    Patsourakos, Spiros; Vourlidas, Angelos E-mail: vourlidas@nrl.navy.mil

    2009-08-01

    The nature of coronal mass ejection (CME)-associated low corona propagating disturbances, 'extreme ultraviolet (EUV) waves', has been controversial since their discovery by EIT on SOHO. The low-cadence, single-viewpoint EUV images and the lack of simultaneous inner corona white-light observations have hindered the resolution of the debate on whether they are true waves or just projections of the expanding CME. The operation of the twin EUV imagers and inner corona coronagraphs aboard STEREO has improved the situation dramatically. During early 2009, the STEREO Ahead (STA) and Behind (STB) spacecrafts observed the Sun in quadrature having a {approx}90 deg. angular separation. An EUV wave and CME erupted from active region 11012, on February 13, when the region was exactly at the limb for STA and hence at disk center for STB. The STEREO observations capture the development of a CME and its accompanying EUV wave not only with high cadence but also in quadrature. The resulting unprecedented data set allowed us to separate the CME structures from the EUV wave signatures and to determine without doubt the true nature of the wave. It is a fast-mode MHD wave after all.

  18. Extreme ultraviolet transmission of a synthetic diamond thin film

    NASA Technical Reports Server (NTRS)

    Vallerga, John V.; Gibson, J. L.; Knowles, J. L.

    1991-01-01

    Measurements are presented of a thin film of synthetic diamond at various wavelengths in the extreme ultraviolet. The synthetic diamond combines the transmission properties of carbon with the strength, density, and ruggedness of a natural diamond. The Extreme Ultraviolet Transmission (EUV) of a film of the synthetic diamond has shown the existence of a thin surface layer of silicon, probably in the form of silicon carbide, which is not a contaminant layer.

  19. Forecasting solar extreme and far ultraviolet irradiance

    NASA Astrophysics Data System (ADS)

    Henney, C. J.; Hock, R. A.; Schooley, A. K.; Toussaint, W. A.; White, S. M.; Arge, C. N.

    2015-03-01

    A new method is presented to forecast the solar irradiance of selected wavelength ranges within the extreme ultraviolet (EUV) and far ultraviolet (FUV) bands. The technique is similar to a method recently published by Henney et al. (2012) to predict solar 10.7 cm (2.8 GHz) radio flux, abbreviated F10.7, utilizing advanced predictions of the global solar magnetic field generated by a flux transport model. In this and the previous study, we find good correlation between the absolute value of the observed photospheric magnetic field and selected EUV/FUV spectral bands. By evolving solar magnetic maps forward 1 to 7 days with a flux transport model, estimations of the Earth side solar magnetic field distribution are generated and used to forecast irradiance. For example, Pearson correlation coefficient values of 0.99, 0.99, and 0.98 are found for 1 day, 3 day, and 7 day predictions, respectively, of the EUV band from 29 to 32 nm. In the FUV, for example, the 160 to 165 nm spectral band, correlation values of 0.98, 0.97, and 0.96 are found for 1 day, 3 day, and 7 day predictions, respectively. In the previous study, the observed F10.7 signal is found to correlate well with strong magnetic field (i.e., sunspot) regions. Here we find that solar EUV and FUV signals are significantly correlated with the weaker magnetic fields associated with plage regions, suggesting that solar magnetic indices may provide an improved indicator (relative to the widely used F10.7 signal) of EUV and FUV nonflaring irradiance variability as input to ionospheric and thermospheric models.

  20. Masks for extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y

    1998-09-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

  1. The Solar Extreme Ultraviolet Monitor for MAVEN

    NASA Astrophysics Data System (ADS)

    Eparvier, F. G.; Chamberlin, P. C.; Woods, T. N.; Thiemann, E. M. B.

    2015-12-01

    The Extreme Ultraviolet (EUV) monitor is an instrument on the NASA Mars Atmosphere and Volatile EvolutioN (MAVEN) mission, designed to measure the variability of the solar soft x-rays and EUV irradiance at Mars. The solar output in this wavelength range is a primary energy input to the Mars atmosphere and a driver for the processes leading to atmospheric escape. The MAVEN EUV monitor consists of three broadband radiometers. The radiometers consist of silicon photodiodes with different bandpass-limiting filters for each channel. The filters for the radiometers are: Channel A: thin foil C/Al/Nb/C for 0.1-3 nm and 17-22 nm, Channel B: thin foil C/Al/Ti/C for 0.1-7 nm, and Channel C: interference filter for 121-122 nm. A fourth, covered photodiode is used to monitor variations in dark signal due to temperature and radiation background changes. The three science channels will monitor emissions from the highly variable corona and transition region of the solar atmosphere. The EUV monitor is mounted on the top deck of the MAVEN spacecraft and is pointed at the Sun for most of its orbit around Mars. The measurement cadence is 1-second. The broadband irradiances can be used to monitor the most rapid changes in solar irradiance due to flares. In combination with time-interpolated observations at Earth of slower varying solar spectral emissions, the broadband MAVEN EUV monitor measurements will also be used in a spectral irradiance model to generate the full EUV spectrum at Mars from 0 to 190 nm in 1-nm bins on a time cadence of 1-minute and daily averages.

  2. Chemical vapor deposited silicon carbide mirrors for extreme ultraviolet applications

    NASA Astrophysics Data System (ADS)

    Keski-Kuha, Ritva A.; Osantowski, John F.; Leviton, Douglas B.; Saha, Timo T.; Wright, Geraldine A.; Boucarut, Rene A.; Fleetwood, Charles M.; Madison, Timothy J.

    1997-01-01

    Advances in optical coating and materials technology have made possible the development of instruments with substantially improved efficiency in the extreme ultraviolet (EUV). For example, the development of the chemical vapor deposition (CVD) SiC mirrors provides an opportunity to extend the range of normal-incidence instruments dow to 60 nm. CVD SiC is a highly polishable material yielding low- scattering surfaces. High UV reflectivity and desirable mechanical and thermal properties make CVD SiC an attractive mirror and/or coating material for EUV applications. The EUV performance of SiC mirrors, as well as some strengths and problem areas, is discussed.

  3. Generation of extreme ultraviolet vortex beams using computer generated holograms.

    PubMed

    Terhalle, Bernd; Langner, Andreas; Päivänranta, Birgit; Guzenko, Vitaliy A; David, Christian; Ekinci, Yasin

    2011-11-01

    We fabricate computer generated holograms for the generation of phase singularities at extreme ultraviolet (EUV) wavelengths using electron beam lithography and demonstrate their ability to generate optical vortices in the nonzero diffraction orders. To this end, we observe the characteristic intensity distribution of the vortex beam and verify the helical phase structure interferometrically. The presented method forms the basis for further studies on singular light fields in the EUV frequency range, i.e., in EUV interference lithography. Since the method is purely achromatic, it may also find applications in various fields of x ray optics. PMID:22048345

  4. Ptychographic hyperspectral spectromicroscopy with an extreme ultraviolet high harmonic comb.

    PubMed

    Zhang, Bosheng; Gardner, Dennis F; Seaberg, Matthew H; Shanblatt, Elisabeth R; Porter, Christina L; Karl, Robert; Mancuso, Christopher A; Kapteyn, Henry C; Murnane, Margaret M; Adams, Daniel E

    2016-08-01

    We report a proof-of-principle demonstration of a new scheme of spectromicroscopy in the extreme ultraviolet (EUV) spectral range, where the spectral response of the sample at different wavelengths is imaged simultaneously. This scheme is enabled by combining ptychographic information multiplexing (PIM) with a tabletop EUV source based on high harmonic generation, where four spectrally narrow harmonics near 30 nm form a spectral comb structure. Extending PIM from previously demonstrated visible wavelengths to the EUV/X-ray wavelengths promises much higher spatial resolution and a more powerful spectral contrast mechanism, making PIM an attractive spectromicroscopy method in both microscopy and spectroscopy aspects. In addition to spectromicroscopy, this method images the multicolor EUV beam in situ, making this a powerful beam characterization technique. In contrast to other methods, the techniques described here use no hardware to separate wavelengths, leading to efficient use of the EUV radiation. PMID:27505837

  5. Extreme ultraviolet interferometry

    SciTech Connect

    Goldberg, K A

    1997-12-01

    EUV lithography is a promising and viable candidate for circuit fabrication with 0.1-micron critical dimension and smaller. In order to achieve diffraction-limited performance, all-reflective multilayer-coated lithographic imaging systems operating near 13-nm wavelength and 0.1 NA have system wavefront tolerances of 0.27 nm, or 0.02 waves RMS. Owing to the highly-sensitive resonant reflective properties of multilayer mirrors and extraordinarily tight tolerances set forth for their fabrication, EUV optical systems require at-wavelength EUV interferometry for final alignment and qualification. This dissertation discusses the development and successful implementation of high-accuracy EUV interferometric techniques. Proof-of-principle experiments with a prototype EUV point-diffraction interferometer for the measurement of Fresnel zoneplate lenses first demonstrated sub-wavelength EUV interferometric capability. These experiments spurred the development of the superior phase-shifting point-diffraction interferometer (PS/PDI), which has been implemented for the testing of an all-reflective lithographic-quality EUV optical system. Both systems rely on pinhole diffraction to produce spherical reference wavefronts in a common-path geometry. Extensive experiments demonstrate EUV wavefront-measuring precision beyond 0.02 waves RMS. EUV imaging experiments provide verification of the high-accuracy of the point-diffraction principle, and demonstrate the utility of the measurements in successfully predicting imaging performance. Complementary to the experimental research, several areas of theoretical investigation related to the novel PS/PDI system are presented. First-principles electromagnetic field simulations of pinhole diffraction are conducted to ascertain the upper limits of measurement accuracy and to guide selection of the pinhole diameter. Investigations of the relative merits of different PS/PDI configurations accompany a general study of the most significant sources

  6. Coherence techniques at extreme ultraviolet wavelengths

    SciTech Connect

    Chang, Chang

    2002-10-01

    The renaissance of Extreme Ultraviolet (EUV) and soft x-ray (SXR) optics in recent years is mainly driven by the desire of printing and observing ever smaller features, as in lithography and microscopy. This attribute is complemented by the unique opportunity for element specific identification presented by the large number of atomic resonances, essentially for all materials in this range of photon energies. Together, these have driven the need for new short-wavelength radiation sources (e.g. third generation synchrotron radiation facilities), and novel optical components, that in turn permit new research in areas that have not yet been fully explored. This dissertation is directed towards advancing this new field by contributing to the characterization of spatial coherence properties of undulator radiation and, for the first time, introducing Fourier optical elements to this short-wavelength spectral region. The first experiment in this dissertation uses the Thompson-Wolf two-pinhole method to characterize the spatial coherence properties of the undulator radiation at Beamline 12 of the Advanced Light Source. High spatial coherence EUV radiation is demonstrated with appropriate spatial filtering. The effects of small vertical source size and beamline apertures are observed. The difference in the measured horizontal and vertical coherence profile evokes further theoretical studies on coherence propagation of an EUV undulator beamline. A numerical simulation based on the Huygens-Fresnel principle is performed.

  7. Defect formation in single layer graphene under extreme ultraviolet irradiation

    NASA Astrophysics Data System (ADS)

    Gao, A.; Zoethout, E.; Sturm, J. M.; Lee, C. J.; Bijkerk, F.

    2014-10-01

    We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and breaking sp2 bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons break the sp2 bonds, forming sp3 bonds, leading to defects in graphene.

  8. Normal incidence multilayer mirrors for extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Stern, R. A.; Haisch, B. M.; Joki, E. G.; Catura, R. C.

    1984-01-01

    Sputtered multilayer coatings allow the use of normal incidence optics in the extreme ultraviolet (EUV) region below 500 A. Multilayer mirrors can be tailored to provide images at strong EUV lines in the sun and stars, in many cases making more efficient use of the telescope aperture than grazing incidence optics. Alternatively, the bandpass can be broadened at the expense of peak effective area, by varying the multilayer structure over the mirror surface. Such mirrors can also serve as optical elements in spectrographs for investigation of specific emission and absorption line complexes, and are self-filtering in that they reject nearby geocoronal and cosmic resonance line backgrounds. Current efforts at the Lockheed Palo Alto Research Laboratory in the design, fabrication, and testing of EUV multilayer mirrors are discussed. This program includes the design and fabrication of normal incidence EUV multilayer mirrors, and the deposition of multilayers on lacquer-coated substrates.

  9. The Third Extreme Ultraviolet Explorer Right Angle Program Catalog: The Last Years

    NASA Astrophysics Data System (ADS)

    Christian, Damian J.

    2002-12-01

    We present 63 new extreme-ultraviolet sources from observations taken during the Right Angle Program (RAP) of the Extreme Ultraviolet Explorer (EUVE). This paper concentrates on data taken in the last years of the RAP, 1999 and 2000, with a sky coverage of 7%. We present sample light curves for several sources, including flare detections from the previously uncataloged source EUVE J0613-23.9B, the active late-type star EUVE J0728-20.9 (V372 Pup), and the cataclysmic variable EUVE J0332-25.9 (VY For). This final RAP catalog, combined with the EUVE all-sky survey, Lampton et al. faint list, and previous RAP catalogs, brings the total number of EUVE sources to nearly 1200.

  10. Solar extreme ultraviolet irradiance: Present, past, and future

    NASA Astrophysics Data System (ADS)

    Lean, J. L.; Woods, T. N.; Eparvier, F. G.; Meier, R. R.; Strickland, D. J.; Correira, J. T.; Evans, J. S.

    2011-01-01

    New models of solar extreme ultraviolet (EUV) irradiance variability are constructed in 1 nm bins from 0 to 120 nm using multiple regression of the Mg II and F10.7 solar activity indices with irradiance observations made during the descending phase of cycle 23. The models have been used to reconstruct EUV spectra daily since 1950, annually since 1610, to forecast daily EUV irradiance and to estimate future levels in cycle 24. A two-component model developed by scaling the observed rotational modulation of the two solar indices underestimates the solar cycle changes that the Solar EUV Experiment (SEE) reports at wavelengths shorter than 40 nm and longer than 80 nm. A three-component model implemented by including an additional term derived from the smoothed Mg II index better reproduces the measurements at all wavelengths. The three-component model is consistent with variations in the EUV energy from 0 to 45 nm that produces the far ultraviolet (FUV) terrestrial dayglow observed by the Global Ultraviolet Imager (GUVI). However, the spectral structure of this third component is complex, and its origin is uncertain. Analogous two- and three-component models are also developed with absolute scales determined by the NRLEUV2 spectrum of the quiet Sun rather than by the SEE average spectrum. Assessment of the EUV absolute spectrum and variability of the four different models indicate that during solar cycle 23, the EUV irradiance (0 to 120 nm) increased 100 ± 30%, from 2.9 ± 0.2 to 5.8 ± 0.9 mWm-2, and may have been as low as 1.9 ± 0.5 mWm-2 during the 17th-century Maunder Minimum. Near the peak of upcoming solar cycle 24, EUV irradiance is expected to increase 40% to 80% above the 2008 minimum values.

  11. Kr photoionized plasma induced by intense extreme ultraviolet pulses

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.

    2016-04-01

    Irradiation of any gas with an intense EUV (extreme ultraviolet) radiation beam can result in creation of photoionized plasmas. The parameters of such plasmas can be significantly different when compared with those of the laser produced plasmas (LPP) or discharge plasmas. In this work, the photoionized plasmas were created in a krypton gas irradiated using an LPP EUV source operating at a 10 Hz repetition rate. The Kr gas was injected into the vacuum chamber synchronously with the EUV radiation pulses. The EUV beam was focused onto a Kr gas stream using an axisymmetrical ellipsoidal collector. The resulting low temperature Kr plasmas emitted electromagnetic radiation in the wide spectral range. The emission spectra were measured either in the EUV or an optical range. The EUV spectrum was dominated by emission lines originating from Kr III and Kr IV ions, and the UV/VIS spectra were composed from Kr II and Kr I lines. The spectral lines recorded in EUV, UV, and VIS ranges were used for the construction of Boltzmann plots to be used for the estimation of the electron temperature. It was shown that for the lowest Kr III and Kr IV levels, the local thermodynamic equilibrium (LTE) conditions were not fulfilled. The electron temperature was thus estimated based on Kr II and Kr I species where the partial LTE conditions could be expected.

  12. Design, fabrication, and characterization of high-efficiency extreme ultraviolet diffusers

    SciTech Connect

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2004-02-19

    As the development of extreme ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, makes it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such example is the diffuser often implemented with ordinary ground glass in the visible light regime. Here we demonstrate the fabrication of reflective EUV diffusers with high efficiency within a controllable bandwidth. Using these techniques we have fabricated diffusers with efficiencies exceeding 10% within a moderate angular single-sided bandwidth of approximately 0.06 radians.

  13. Self-cleaning optic for extreme ultraviolet lithography

    DOEpatents

    Klebanoff, Leonard E.; Stulen, Richard H.

    2003-12-16

    A multilayer reflective optic or mirror for lithographic applications, and particularly extreme ultraviolet (EUV) lithography, having a surface or "capping" layer which in combination with incident radiation and gaseous molecular species such as O.sub.2, H.sub.2, H.sub.2 O provides for continuous cleaning of carbon deposits from the optic surface. The metal capping layer is required to be oxidation resistant and capable of transmitting at least 90% of incident EUV radiation. Materials for the capping layer include Ru, Rh, Pd, Ir, Pt and Au and combinations thereof.

  14. MoRu/Be multilayers for extreme ultraviolet applications

    DOEpatents

    Bajt, Sasa C.; Wall, Mark A.

    2001-01-01

    High reflectance, low intrinsic roughness and low stress multilayer systems for extreme ultraviolet (EUV) lithography comprise amorphous layers MoRu and crystalline Be layers. Reflectance greater than 70% has been demonstrated for MoRu/Be multilayers with 50 bilayer pairs. Optical throughput of MoRu/Be multilayers can be 30-40% higher than that of Mo/Be multilayer coatings. The throughput can be improved using a diffusion barrier to make sharper interfaces. A capping layer on the top surface of the multilayer improves the long-term reflectance and EUV radiation stability of the multilayer by forming a very thin native oxide that is water resistant.

  15. Characteristics of extreme ultraviolet emission from high-Z plasmas

    NASA Astrophysics Data System (ADS)

    Ohashi, H.; Higashiguchi, T.; Suzuki, Y.; Kawasaki, M.; Suzuki, C.; Tomita, K.; Nishikino, M.; Fujioka, S.; Endo, A.; Li, B.; Otsuka, T.; Dunne, P.; O'Sullivan, G.

    2016-03-01

    We demonstrate the extreme ultraviolet (EUV) and soft x-ray sources in the 2 to 7 nm spectral region related to the beyond EUV (BEUV) question at 6.x nm and the water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs), extending below the carbon K edge (4.37 nm). An outline of a microscope design for single-shot live cell imaging is proposed based on high-Z plasma UTA source, coupled to multilayer mirror optics.

  16. The intrinsic extreme ultraviolet fluxes of F5 V to M5 V stars

    SciTech Connect

    Linsky, Jeffrey L.; Fontenla, Juan; France, Kevin E-mail: jfontenla@nwra.com

    2014-01-01

    Extreme ultraviolet (EUV) radiations (10-117 nm) from host stars play important roles in the ionization, heating, and mass loss from exoplanet atmospheres. Together with the host star's Lyα and far-UV (117-170 nm) radiation, EUV radiation photodissociates important molecules, thereby changing the chemistry in exoplanet atmospheres. Since stellar EUV fluxes cannot now be measured and interstellar neutral hydrogen completely obscures stellar radiation between 40 and 91.2 nm, even for the nearest stars, we must estimate the unobservable EUV flux by indirect methods. New non-LTE semiempirical models of the solar chromosphere and corona and solar irradiance measurements show that the ratio of EUV flux in a variety of wavelength bands to the Lyα flux varies slowly with the Lyα flux and thus with the magnetic heating rate. This suggests and we confirm that solar EUV/Lyα flux ratios based on the models and observations are similar to the available 10-40 nm flux ratios observed with the Extreme Ultraviolet Explorer (EUVE) satellite and the 91.2-117 nm flux observed with the Far Ultraviolet Spectroscopic Explorer (FUSE) satellite for F5 V-M5 V stars. We provide formulae for predicting EUV flux ratios based on the EUVE and FUSE stellar data and on the solar models, which are essential input for modeling the atmospheres of exoplanets.

  17. NEW SOLAR EXTREME-ULTRAVIOLET IRRADIANCE OBSERVATIONS DURING FLARES

    SciTech Connect

    Woods, Thomas N.; Hock, Rachel; Eparvier, Frank; Jones, Andrew R.; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Warren, Harry; Schrijver, Carolus J.; Webb, David F.; Bailey, Scott; Tobiska, W. Kent

    2011-10-01

    New solar extreme-ultraviolet (EUV) irradiance observations from the NASA Solar Dynamics Observatory (SDO) EUV Variability Experiment provide full coverage in the EUV range from 0.1 to 106 nm and continuously at a cadence of 10 s for spectra at 0.1 nm resolution and even faster, 0.25 s, for six EUV bands. These observations can be decomposed into four distinct characteristics during flares. First, the emissions that dominate during the flare's impulsive phase are the transition region emissions, such as the He II 30.4 nm. Second, the hot coronal emissions above 5 MK dominate during the gradual phase and are highly correlated with the GOES X-ray. A third flare characteristic in the EUV is coronal dimming, seen best in the cool corona, such as the Fe IX 17.1 nm. As the post-flare loops reconnect and cool, many of the EUV coronal emissions peak a few minutes after the GOES X-ray peak. One interesting variation of the post-eruptive loop reconnection is that warm coronal emissions (e.g., Fe XVI 33.5 nm) sometimes exhibit a second large peak separated from the primary flare event by many minutes to hours, with EUV emission originating not from the original flare site and its immediate vicinity, but rather from a volume of higher loops. We refer to this second peak as the EUV late phase. The characterization of many flares during the SDO mission is provided, including quantification of the spectral irradiance from the EUV late phase that cannot be inferred from GOES X-ray diagnostics.

  18. Low extreme-ultraviolet luminosities impinging on protoplanetary disks

    SciTech Connect

    Pascucci, I.; Hendler, N. P.; Ricci, L.; Gorti, U.; Hollenbach, D.; Brooks, K. J.; Contreras, Y.

    2014-11-01

    The amount of high-energy stellar radiation reaching the surface of protoplanetary disks is essential to determine their chemistry and physical evolution. Here, we use millimetric and centimetric radio data to constrain the extreme-ultraviolet (EUV) luminosity impinging on 14 disks around young (∼2-10 Myr) sun-like stars. For each object we identify the long-wavelength emission in excess to the dust thermal emission, attribute that to free-free disk emission, and thereby compute an upper limit to the EUV reaching the disk. We find upper limits lower than 10{sup 42} photons s{sup –1} for all sources without jets and lower than 5 × 10{sup 40} photons s{sup –1} for the three older sources in our sample. These latter values are low for EUV-driven photoevaporation alone to clear out protoplanetary material in the timescale inferred by observations. In addition, our EUV upper limits are too low to reproduce the [Ne II] 12.81 μm luminosities from three disks with slow [Ne II]-detected winds. This indicates that the [Ne II] line in these sources primarily traces a mostly neutral wind where Ne is ionized by 1 keV X-ray photons, implying higher photoevaporative mass loss rates than those predicted by EUV-driven models alone. In summary, our results suggest that high-energy stellar photons other than EUV may dominate the dispersal of protoplanetary disks around sun-like stars.

  19. Low Extreme-ultraviolet Luminosities Impinging on Protoplanetary Disks

    NASA Astrophysics Data System (ADS)

    Pascucci, I.; Ricci, L.; Gorti, U.; Hollenbach, D.; Hendler, N. P.; Brooks, K. J.; Contreras, Y.

    2014-11-01

    The amount of high-energy stellar radiation reaching the surface of protoplanetary disks is essential to determine their chemistry and physical evolution. Here, we use millimetric and centimetric radio data to constrain the extreme-ultraviolet (EUV) luminosity impinging on 14 disks around young (~2-10 Myr) sun-like stars. For each object we identify the long-wavelength emission in excess to the dust thermal emission, attribute that to free-free disk emission, and thereby compute an upper limit to the EUV reaching the disk. We find upper limits lower than 1042 photons s-1 for all sources without jets and lower than 5 × 1040 photons s-1 for the three older sources in our sample. These latter values are low for EUV-driven photoevaporation alone to clear out protoplanetary material in the timescale inferred by observations. In addition, our EUV upper limits are too low to reproduce the [Ne II] 12.81 μm luminosities from three disks with slow [Ne II]-detected winds. This indicates that the [Ne II] line in these sources primarily traces a mostly neutral wind where Ne is ionized by 1 keV X-ray photons, implying higher photoevaporative mass loss rates than those predicted by EUV-driven models alone. In summary, our results suggest that high-energy stellar photons other than EUV may dominate the dispersal of protoplanetary disks around sun-like stars.

  20. Extreme ultra-violet movie camera for imaging microsecond time scale magnetic reconnection

    SciTech Connect

    Chai, Kil-Byoung; Bellan, Paul M.

    2013-12-15

    An ultra-fast extreme ultra-violet (EUV) movie camera has been developed for imaging magnetic reconnection in the Caltech spheromak/astrophysical jet experiment. The camera consists of a broadband Mo:Si multilayer mirror, a fast decaying YAG:Ce scintillator, a visible light block, and a high-speed visible light CCD camera. The camera can capture EUV images as fast as 3.3 × 10{sup 6} frames per second with 0.5 cm spatial resolution. The spectral range is from 20 eV to 60 eV. EUV images reveal strong, transient, highly localized bursts of EUV radiation when magnetic reconnection occurs.

  1. Actual defect observation results of an extreme-ultraviolet blank mask by coherent diffraction imaging

    NASA Astrophysics Data System (ADS)

    Harada, Tetsuo; Hashimoto, Hiraku; Amano, Tsuyoshi; Kinoshita, Hiroo; Watanabe, Takeo

    2016-03-01

    Extreme-ultraviolet (EUV) lithography poses a number of challenges, one of which is the production of a defect-free mask. To observe the defects on an EUV mask in a quantitative phase image, we have developed a microcoherent EUV scatterometry microscope. The intensity and phase images of the defects are reconstructed using ptychography. We observe four actual defects on an EUV blank mask using the microscope. The reconstructed shapes of the actual defects correspond well to those measured by atomic force microscopy (AFM). Our microscope should therefore function as an essential review tool in characterizing defects.

  2. Evolution of laser-produced Sn extreme ultraviolet source diameter for high-brightness source

    SciTech Connect

    Roy, Amitava E-mail: aroy@barc.gov.in; Arai, Goki; Hara, Hiroyuki; Higashiguchi, Takeshi; Ohashi, Hayato; Sunahara, Atsushi; Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Miura, Taisuke; Mocek, Tomas; Endo, Akira

    2014-08-18

    We have investigated the effect of irradiation of solid Sn targets with laser pulses of sub-ns duration and sub-mJ energy on the diameter of the extreme ultraviolet (EUV) emitting region and source conversion efficiency. It was found that an in-band EUV source diameter as low as 18 μm was produced due to the short scale length of a plasma produced by a sub-ns laser. Most of the EUV emission occurs in a narrow region with a plasma density close to the critical density value. Such EUV sources are suitable for high brightness and high repetition rate metrology applications.

  3. Understanding the Early Evolution of M dwarf Extreme Ultraviolet Radiation

    NASA Astrophysics Data System (ADS)

    Peacock, Sarah; Barman, Travis; Shkolnik, Evgenya

    2015-11-01

    The chemistry and evolution of planetary atmospheres depends on the evolution of high-energy radiation emitted by its host star. High levels of extreme ultraviolet (EUV) radiation can drastically alter the atmospheres of terrestrial planets through ionizing, heating, expanding, chemically modifying and eroding them during the first few billion years of a planetary lifetime. While there is evidence that stars emit their highest levels of far and near ultraviolet (FUV; NUV) radiation in the earliest stages of their evolution, we are currently unable to directly measure the EUV radiation. Most previous stellar atmosphere models under-predict FUV and EUV emission from M dwarfs; here we present new models for M stars that include prescriptions for the hot, lowest density atmospheric layers (chromosphere, transition region and corona), from which this radiation is emitted. By comparing our model spectra to GALEX near and far ultraviolet fluxes, we are able to predict the evolution of EUV radiation for M dwarfs from 10 Myr to a few Gyr. This research is the next major step in the HAZMAT (HAbitable Zones and M dwarf Activity across Time) project to analyze how the habitable zone evolves with the evolving properties of stellar and planetary atmospheres.

  4. Extreme ultraviolet high-harmonic spectroscopy of solids

    NASA Astrophysics Data System (ADS)

    Luu, T. T.; Garg, M.; Kruchinin, S. Yu.; Moulet, A.; Hassan, M. Th.; Goulielmakis, E.

    2015-05-01

    Extreme ultraviolet (EUV) high-harmonic radiation emerging from laser-driven atoms, molecules or plasmas underlies powerful attosecond spectroscopy techniques and provides insight into fundamental structural and dynamic properties of matter. The advancement of these spectroscopy techniques to study strong-field electron dynamics in condensed matter calls for the generation and manipulation of EUV radiation in bulk solids, but this capability has remained beyond the reach of optical sciences. Recent experiments and theoretical predictions paved the way to strong-field physics in solids by demonstrating the generation and optical control of deep ultraviolet radiation in bulk semiconductors, driven by femtosecond mid-infrared fields or the coherent up-conversion of terahertz fields to multi-octave spectra in the mid-infrared and optical frequencies. Here we demonstrate that thin films of SiO2 exposed to intense, few-cycle to sub-cycle pulses give rise to wideband coherent EUV radiation extending in energy to about 40 electronvolts. Our study indicates the association of the emitted EUV radiation with intraband currents of multi-petahertz frequency, induced in the lowest conduction band of SiO2. To demonstrate the applicability of high-harmonic spectroscopy to solids, we exploit the EUV spectra to gain access to fine details of the energy dispersion profile of the conduction band that are as yet inaccessible by photoemission spectroscopy in wide-bandgap dielectrics. In addition, we use the EUV spectra to trace the attosecond control of the intraband electron motion induced by synthesized optical transients. Our work advances lightwave electronics in condensed matter into the realm of multi-petahertz frequencies and their attosecond control, and marks the advent of solid-state EUV photonics.

  5. THE EXTREME-ULTRAVIOLET EMISSION FROM SUN-GRAZING COMETS

    SciTech Connect

    Bryans, P.; Pesnell, W. D.

    2012-11-20

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses. We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  6. Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy

    NASA Astrophysics Data System (ADS)

    Schmitz, Christoph; Wilson, Daniel; Rudolf, Denis; Wiemann, Carsten; Plucinski, Lukasz; Riess, Sally; Schuck, Martin; Hardtdegen, Hilde; Schneider, Claus M.; Tautz, F. Stefan; Juschkin, Larissa

    2016-06-01

    We report on the combination of a state-of-the-art energy-filtering photoemission electron microscope with an intense yet compact laboratory-based gas discharge extreme ultraviolet (EUV) light source. Using a photon energy of 71.7 eV from oxygen plasma (O5+ spectral line), we demonstrate element-selective photoelectron imaging in real space and band structure mapping in reciprocal space. Additionally, the high surface sensitivity of the EUV light was used to study the surface oxidation on islands of the phase-change material Ge1Sb2Te4 . The EUV light source allows the extension of spectromicroscopy, previously only feasible at synchrotron beamlines, to laboratory-based work.

  7. The Extreme-ultraviolet Emission from Sun-grazing Comets

    NASA Technical Reports Server (NTRS)

    Bryans, Paul; Pesnell, William D.

    2012-01-01

    The Atmospheric Imaging Assembly (AIA) on the Solar Dynamics Observatory has observed two Sun-grazing comets as they passed through the solar atmosphere. Both passages resulted in a measurable enhancement of extreme-ultraviolet (EUV) radiance in several of the AIA bandpasses.We explain this EUV emission by considering the evolution of the cometary atmosphere as it interacts with the ambient solar atmosphere. Molecules in the comet rapidly sublimate as it approaches the Sun. They are then photodissociated by the solar radiation field to create atomic species. Subsequent ionization of these atoms produces a higher abundance of ions than normally present in the corona and results in EUV emission in the wavelength ranges of the AIA telescope passbands.

  8. At-wavelength interferometry of extreme ultraviolet lithographic optics

    SciTech Connect

    Lee, Sang Hun; Naulleau, Patrick; Goldberg, Kenneth; Medecki, Hector; Bresloff, Cynthia; Chang, Chang; Attwood, David; Bokor, Jeffrey; Chang, Chang; Attwood, David; Bokor, Jeffrey Tejnil, Edita

    1998-11-01

    A phase-shifting point diffraction interferometer (PS/PDI) has recently been developed to evaluate optics for extreme ultraviolet (EUV) projection lithography systems. The interferometer has been implemented at the Advanced Light Source at Lawrence Berkeley National Laboratory and is currently being used to test experimental EUV Schwarzschild objectives. Recent PS/PDI measurements indicate these experimental objectives to have wavefront errors on the order of 0.1 waves ({approximately}1 nm at a wavelength of 13.4 nm) rms. These at-wavelength measurements have also revealed the multilayer phase effects, demonstrating the sensitivity and importance of EUV characterization. The measurement precision of the PS/PDI has been experimentally determined to be better than 0.01 waves. Furthermore, a systematic-error-limited absolute measurement accuracy of 0.004 waves has been demonstrated. {copyright} {ital 1998 American Institute of Physics.}

  9. Extreme ultraviolet response of a Tektronix 1024 x 1024 CCD

    NASA Astrophysics Data System (ADS)

    Moses, Daniel J.; Hochedez, Jean-Francois E.; Howard, Russell A.; Au, Benjamin D.; Wang, Dennis; Blouke, Morley

    1992-08-01

    The goal of the detector development program for the Solar and Heliospheric Spacecraft (SOHO) EUV Imaging Telescope (EIT) is an Extreme UltraViolet (EUV) CCD (Charge Coupled Device) camera. The Naval Research Lab (NRL) SOHO COD Group has developed a design for the EIT camera and is screening CCDs for flight application. Tektronix Inc. have fabricated 1024x1024 CCDs for the EIT program. As a part of the CCD screening effort the quantum efficiency (QE) of a prototype CCD has been measured in the NRL EUV laboratory over the wavelength range of 256 to 735 Angstroms. A simplified model has been applied to these QE measurements to illustrate the relevant physical processes that determine the performance of the detector.

  10. Spectral purification and infrared light recycling in extreme ultraviolet lithography sources.

    PubMed

    Bayraktar, Muharrem; van Goor, Fred A; Boller, Klaus J; Bijkerk, Fred

    2014-04-01

    We present the design of a novel collector mirror for laser produced plasma (LPP) light sources to be used in extreme ultraviolet (EUV) lithography. The design prevents undesired infrared (IR) drive laser light, reflected from the plasma, from reaching the exit of the light source. This results in a strong purification of the EUV light, while the reflected IR light becomes refocused into the plasma for enhancing the IR-to-EUV conversion. The dual advantage of EUV purification and conversion enhancement is achieved by incorporating an IR Fresnel zone plate pattern into the EUV reflective multilayer coating of the collector mirror. Calculations using Fresnel-Kirchhoff's diffraction theory for a typical collector design show that the IR light at the EUV exit is suppressed by four orders of magnitude. Simultaneously, 37% of the reflected IR light is refocused back the plasma. PMID:24718234

  11. Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist

    NASA Astrophysics Data System (ADS)

    Furukawa, Kikuo; Kozawa, Takahiro; Tagawa, Seiichi

    2009-03-01

    Extreme ultraviolet (EUV) lithography is the most favorable process as next-generation lithography. For the development of EUV resists, phenolic materials such as poly (4-hydroxystyrene) have been investigated. Phenolic hydroxyl groups of polymers play an important role in acid diffusion, dissolution kinetics, and adhesion to substrates. Besides these important roles, phenolic hydroxyl groups are also an effective proton source in acid generation in EUV resists. However, the roles of alcohol hydroxyl groups have not been well-studied. To clarify the difference between phenolic and alcoholic hydroxyl groups upon exposure to EUV radiation, we synthesized acrylic terpolymers containing alcoholic hydroxyl groups as model photopolymers and exposed the resist samples based on these polymers to EUV radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of alcoholic hydroxyl groups upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

  12. Multilayer reflective coatings for extreme-ultraviolet lithography

    SciTech Connect

    Montcalm, C., LLNL

    1998-03-10

    Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling technology for EUV lithography. Mo/Si multilayers with reflectances of 67.5% at 13.4 nm are now routinely achieved and reflectances of 70 2% at 11.4 nm were obtained with MO/Be multilayers. High reflectance is achieved with careful control of substrate quality, layer thicknesses, multilayer materials, interface quality, and surface termination. Reflectance and film stress were found to be stable relative to the requirements for application to EUV lithography. The run-to-run reproducibility of the reflectance peak position was characterized to be better than 0.2%, providing the required wavelength matching among the seven multilayer-coated mirrors used in the present lithography system design. Uniformity of coating was improved to better than 0.5% across 150 mm diameter substrates. These improvements in EUV multilayer mirror technology will enable us to meet the stringent specifications for coating the large optical substrates for our next-generation EUV lithography system.

  13. Extreme ultraviolet lithography: A few more pieces of the puzzle

    SciTech Connect

    Anderson, Christopher N.

    2009-05-20

    The work described in this dissertation has improved three essential components of extreme ultraviolet (EUV) lithography: exposure tools, photoresist, and metrology. Exposure tools. A field-averaging illumination stage is presented that enables nonuniform, high-coherence sources to be used in applications where highly uniform illumination is required. In an EUV implementation, it is shown that the illuminator achieves a 6.5% peak-to-valley intensity variation across the entire design field of view. In addition, a design for a stand-alone EUV printing tool capable of delivering 15 nm half-pitch sinusoidal fringes with available sources, gratings and nano-positioning stages is presented. It is shown that the proposed design delivers a near zero line-edge-rougness (LER) aerial image, something extremely attractive for the application of resist testing. Photoresist. Two new methods of quantifying the deprotection blur of EUV photoresists are described and experimentally demonstrated. The deprotection blur, LER, and sensitivity parameters of several EUV photoresists are quantified simultaneously as base weight percent, photoacid generator (PAG) weight percent, and post-exposure bake (PEB) temperature are varied. Two surprising results are found: (1) changing base weight percent does not significantly affect the deprotection blur of EUV photoresist, and (2) increasing PAG weight percent can simultaneously reduce LER and E-size in EUV photoresist. The latter result motivates the development of an EUV exposure statistics model that includes the effects of photon shot noise, the PAG spatial distribution, and the changing of the PAG distribution during the exposure. In addition, a shot noise + deprotection blur model is used to show that as deprotection blur becomes large relative to the size of the printed feature, LER reduction from improved counting statistics becomes dominated by an increase in LER due to reduced deprotection contrast. Metrology. Finally, this

  14. Stress-induced pellicle analysis for extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Park, Eun-Sang; Kim, Min-Ha; Hwang, Sollee; Kim, Jung Hwan; Oh, Hye-Keun

    2016-03-01

    The defect on the extreme ultraviolet (EUV) mask can cause image quality degradation on the wafer and also poses a serious problem for achieving high volume manufacturing (HVM). Using a pellicle could decrease the critical size of a defect by taking the defect away from the focal plane of a mask. Considering the double pass transmission for the thickness of extreme ultraviolet lithography EUVL pellicle should be ~ nm thin. For ~ nm thin pellicle, the thermal stress by EUV light exposure may damage the pellicle. Therefore, an investigation of thermal stress is desired for reliable EUV light transmission through pellicle. Therefore, we calculated the total stress and compared with material maximum stress of the pellicle. Breaking or the safety of the pellicle could be determined by the induced total stress, however, the cyclic exposure heating could decrease the material maximum stress of the pellicle. The c-Si (crystalline silicon) has good mechanical durability than the p-Si (poly-crystalline silicon) under cyclic thermal exposure.

  15. Characterization of Multilayer Reflective Coatings for Extreme Ultraviolet Lithography

    SciTech Connect

    Wedowski, M.; Gullikson, E.M.; Underwood, J.H.; Spiller, E.A.; Montcalm, C.; Kearney, P.A.; Bajt, S.; Schmidt, M.A.; Folta, J.A.

    1999-11-01

    The synchrotron-based reflectometer at beamline 6.3.2 of the Advanced Light Source (ALS) in Berkeley is an important metrology tool within the current Extreme Ultraviolet Lithography (EUVL) program. This program is a joint activity of three National Laboratories and a consortium of leading semiconductor manufacturers. Its goal is the development of a technology for routine production of sub-100 nm feature sizes for microelectronic circuits. Multilayer-coated normal-incidence optical surfaces reflecting in the Extreme Ultraviolet (EUV) spectral range near 13 nm are the basis for this emerging technology. All optical components of EUV lithographic steppers need to be characterized at-wavelength during their development and manufacturing process. Multilayer coating uniformity and gradient, accurate wavelength matching and high peak reflectances are the main parameters to be optimized. The mechanical and optical properties of the reflectometer at ALS beamline 6.3.2 proved to be well suited for the needs of the current EUVL program. In particular the facility is highly precise in its wavelength calibration and the determination of absolute EUV reflectance. The reproducibility of results of measurements at ALS beamline 6.3.2 is 0.2 % for reflectivity and 0.002 nm for wavelength.

  16. Reconstruction of Solar Extreme Ultraviolet Flux 1740 - 2015

    NASA Astrophysics Data System (ADS)

    Svalgaard, Leif

    2016-08-01

    Solar extreme ultraviolet (EUV) radiation creates the conducting E-layer of the ionosphere, mainly by photo-ionization of molecular oxygen. Solar heating of the ionosphere creates thermal winds, which by dynamo action induce an electric field driving an electric current having a magnetic effect observable on the ground, as was discovered by G. Graham in 1722. The current rises and falls with the Sun, and thus causes a readily observable diurnal variation of the geomagnetic field, allowing us to deduce the conductivity and thus the EUV flux as far back as reliable magnetic data reach. High-quality data go back to the "Magnetic Crusade" of the 1830s and less reliable, but still usable, data are available for portions of the 100 years before that. J.R. Wolf and, independently, J.-A. Gautier discovered the dependence of the diurnal variation on solar activity, and today we understand and can invert that relationship to construct a reliable record of the EUV flux from the geomagnetic record. We compare that to the F_{10.7} flux and the sunspot number, and we find that the reconstructed EUV flux reproduces the F_{10.7} flux with great accuracy. On the other hand, it appears that the Relative Sunspot Number as currently defined is beginning to no longer be a faithful representation of solar magnetic activity, at least as measured by the EUV and related indices. The reconstruction suggests that the EUV flux reaches the same low (but non-zero) value at every sunspot minimum (possibly including Grand Minima), representing an invariant "solar magnetic ground state".

  17. The extreme ultraviolet spectrum of the kinetically dominated quasar 3C 270.1

    NASA Astrophysics Data System (ADS)

    Punsly, Brian; Marziani, Paola

    2015-10-01

    Only a handful of quasars have been identified as kinetically dominated, their long-term time-averaged jet power, overline{Q}, exceeds the bolometric thermal emission, Lbol, associated with the accretion flow. This Letter presents the first extreme ultraviolet (EUV) spectrum of a kinetically dominated quasar, 3C 270.1. The EUV continuum flux density of 3C 270.1 is very steep, F_{ν } ˜ ν ^{-α _{EUV}}, αEUV = 2.98 ± 0.15. This value is consistent with the correlation of overline{Q}/L_{bol} and αEUV found in previous studies of the EUV continuum of quasars, the EUV deficit of radio loud quasars. Curiously, although ultraviolet broad absorption line (BAL) troughs in quasar spectra are anticorrelated with overline{Q}, 3C 270.1 has been considered a BAL quasar based on an SDSS spectrum. This claim is examined in terms of the EUV spectrum of O VI and the highest resolution C IV spectrum in the archival data and the SDSS spectrum. First, from [O III]4959,5007 (IR) observations and the UV spectral lines, it is concluded that the correct redshift for 3C 270.1 is 1.5266. It is then found that the standard measure of broad absorption, BALnicity = 0, for Mg II 2800, C IV 1549 and O VI 1032 in all epochs.

  18. At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems.

    PubMed

    Naulleau, P; Goldberg, K A; Gullikson, E M; Bokor, J

    2000-06-10

    The extreme-ultraviolet (EUV) phase-shifting point-diffraction interferometer (PS/PDI) has recently been developed to provide high-accuracy wave-front characterization critical to the development of EUV lithography systems. Here we describe an enhanced implementation of the PS/PDI that significantly extends its measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wave front and flare. PS/PDI-based flare characterization of two recently fabricated EUV 10x-reduction lithographic optical systems is presented. PMID:18345220

  19. Ablation and transmission of thin solid targets irradiated by intense extreme ultraviolet laser radiation

    NASA Astrophysics Data System (ADS)

    Aslanyan, V.; Kuznetsov, I.; Bravo, H.; Woolston, M. R.; Rossall, A. K.; Menoni, C. S.; Rocca, J. J.; Tallents, G. J.

    2016-09-01

    The interaction of an extreme ultraviolet (EUV) laser beam with a parylene foil was studied by experiments and simulation. A single EUV laser pulse of nanosecond duration focused to an intensity of 3 × 1010 W cm-2 perforated micrometer thick targets. The same laser pulse was simultaneously used to diagnose the interaction by a transmission measurement. A combination of 2-dimensional radiation-hydrodynamic and diffraction calculations was used to model the ablation, leading to good agreement with experiment. This theoretical approach allows predictive modelling of the interaction with matter of intense EUV beams over a broad range of parameters.

  20. Exploring the temporally resolved electron density evolution in extreme ultra-violet induced plasmas

    NASA Astrophysics Data System (ADS)

    van der Horst, R. M.; Beckers, J.; Nijdam, S.; Kroesen, G. M. W.

    2014-07-01

    We measured the electron density in an extreme ultra-violet (EUV) induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density just after the EUV pulse is 2.6 × 1016 m-3. This is in good agreement with a theoretical prediction from photo-ionization, which yields a density of 4.5 × 1016 m-3. After the EUV pulse the density slightly increases due to electron impact ionization. The plasma (i.e. electron density) decays in tens of microseconds.

  1. Extreme ultraviolet source at 6.7 nm based on a low-density plasma

    SciTech Connect

    Higashiguchi, Takeshi; Yugami, Noboru; Otsuka, Takamitsu; Jiang, Weihua; Endo, Akira; Li Bowen; Kilbane, Deirdre; Dunne, Padraig; O'Sullivan, Gerry

    2011-11-07

    We demonstrate an efficient extreme ultraviolet (EUV) source for operation at {lambda} = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2% BW), which is 1.6 times larger than the 0.33% (0.6% BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.

  2. Multilayer mirror with enhanced spectral selectivity for the next generation extreme ultraviolet lithography

    SciTech Connect

    Medvedev, V. V. Kruijs, R. W. E. van de; Yakshin, A. E.; Novikova, N. N.; Krivtsun, V. M.; Louis, E.; Bijkerk, F.; Yakunin, A. M.

    2013-11-25

    We have demonstrated a hybrid extreme ultraviolet (EUV) multilayer mirror for 6.x nm radiation that provides selective suppression for infrared (IR) radiation. The mirror consists of an IR-transparent LaN∕B multilayer stack which is used as EUV-reflective coating and antireflective (AR) coating to suppress IR. The AR coating can be optimized to suppress CO{sub 2} laser radiation at the wavelength of 10.6 μm, which is of interest for application in next-generation EUV lithography systems.

  3. Employing partially coherent, compact gas-discharge sources for coherent diffractive imaging with extreme ultraviolet light

    NASA Astrophysics Data System (ADS)

    Bußmann, J.; Odstrčil, M.; Bresenitz, R.; Rudolf, D.; Miao, Jianwei; Brocklesby, W. S.; Grützmacher, D.; Juschkin, L.

    2015-09-01

    Coherent diffractive imaging (CDI) and related techniques enable a new type of diffraction-limited high-resolution extreme ultraviolet (EUV) microscopy. Here, we demonstrate CDI reconstruction of a complex valued object under illumination by a compact gas-discharge EUV light source emitting at 17.3 nm (O VI spectral line). The image reconstruction method accounts for the partial spatial coherence of the radiation and allows imaging even with residual background light. These results are a first step towards laboratory-scale CDI with a gas-discharge light source for applications including mask inspection for EUV lithography, metrology and astronomy.

  4. Efficient extreme ultraviolet transmission gratings for plasma diagnostics

    NASA Astrophysics Data System (ADS)

    Braig, Christoph; Predehl, Peter; Kley, Ernst-Bernhard

    2011-06-01

    We report on a theoretical study of free-standing phase transmission gratings for high-resolution extreme ultraviolet (EUV) and soft x-ray spectroscopy and investigate their properties. Designed for wavelengths between about 2 and 40 nm, the devices may provide a first order diffraction efficiency beyond 30%. We use rigorous coupled wave analysis methods in order to optimize the grating design parameters and discuss features of segmented grating arrays. Elemental, as well as compound, materials such as Be, Mo, LiF, and poly-(methylmethacrylate) are considered with respect to their potential and practical limitations in terms of feasibility and sensitivity to radiation damage. Simulations are performed for several samples on the radiation produced by a table-top EUV plasma source and applications to astrophysical problems are considered.

  5. Quality control of EUVE databases

    NASA Technical Reports Server (NTRS)

    John, L. M.; Drake, J.

    1992-01-01

    The publicly accessible databases for the Extreme Ultraviolet Explorer include: the EUVE Archive mailserver; the CEA ftp site; the EUVE Guest Observer Mailserver; and the Astronomical Data System node. The EUVE Performance Assurance team is responsible for verifying that these public EUVE databases are working properly, and that the public availability of EUVE data contained therein does not infringe any data rights which may have been assigned. In this poster, we describe the Quality Assurance (QA) procedures we have developed from the approach of QA as a service organization, thus reflecting the overall EUVE philosophy of Quality Assurance integrated into normal operating procedures, rather than imposed as an external, post facto, control mechanism.

  6. The Emergence of Alternative Developers for Extreme Ultraviolet Lithography

    NASA Astrophysics Data System (ADS)

    Itani, Toshiro; Santillan, Julius Joseph

    2010-09-01

    Recent work on extreme ultraviolet (EUV) resists has shown the application of alternative resist processes as a possible solution to achieve lithographic performance targets. In this study, the potential of tetrabutylammonium hydroxide (TBAH) as a possible alternative to the currently used tetramethylammonium hydroxide developer solution was investigated. A significant improvement in lithographic performance was achieved using the TBAH developer. However, this developer solution has a relatively high freezing temperature, particularly at high concentrations. We report that the addition of glycerin to the TBAH developer lowered the freezing temperature without adversely affecting lithographic performance.

  7. Amorphous silicon carbide coatings for extreme ultraviolet optics

    NASA Technical Reports Server (NTRS)

    Kortright, J. B.; Windt, David L.

    1988-01-01

    Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

  8. EXCEED: an extreme ultraviolet spectrometer onboard SPRINT-A

    NASA Astrophysics Data System (ADS)

    Murakami, Go; Yoshioka, Kazuo; Yamazaki, Atsushi; Uemizu, Kazunori; Ishii, Hiroaki; Uji, Kentaro; Yoshikawa, Ichiro; Kagitani, Masato; Tsuchiya, Fuminori

    2012-09-01

    The extreme ultraviolet (EUV) telescope EXCEED (Extreme Ultraviolet Spectroscope for Exospheric Dynamics) onboard the Japan's small satellite SPRINT-A will be launched in August 2013. The EXCEED instrument will observe tenuous gases and plasmas around the planets in the solar system (e.g., Mercury, Venus, Mars, Jupiter, and Saturn). The EXCEED instrument is designed to have a spectral range of 60-145 nm with a spectral resolution of 0.4-1.0 nm. The instrument has a field of view of 400” x 140” (maximum), and the attitude fluctuations are stabilized within +/-5". The optics of the instrument consists of an entrance mirror with a diameter of 200 mm, three types of slits, two types of filters, a laminar type grating, and a 5-stage microchannel plate assembly with a resistive anode encoder. In this paper, we report the general mission overview, the instrumentations, and the results of ground calibrations.

  9. Sub-50nm extreme ultraviolet holographic imaging

    NASA Astrophysics Data System (ADS)

    Wachulak, P. W.; Marconi, M. C.; Bartels, R. A.; Menoni, C. S.; Rocca, J. J.

    2009-05-01

    Imaging tools for nanoscicence involving sub-100-nm scale objects have been dominated by atomic force microscopy (AFM), scanning tunneling microscopy (STM), and electron microscopy (SEM, TEM). These imaging techniques have contributed substantially to the development of nanoscience, providing a very powerful diagnostic tool capable of obtaining images with atomic resolution or as a subsidiary mechanism to arrange or modify surfaces also at the atomic scale [1,2]. However, some important problems have persisted traditional nanoscale imaging techniques. For example when scanning a nanometer size object that is not attached rigidly to a surface the interaction with the tip significantly perturbs the specimen degrading or eventually precluding the image acquisition. Electron microscopy often requires surface preparation, consisting of metallization of the sample to avoid surface charging. Additionally the metallization of the sample may alter its characteristics and also limits the resolution. In both cases, if the sample is large (millimeters in size) due to the limited field of view, the image obtained with these conventional methods is only representative of a very small portion of the object. Wavelength-limited holographic imaging using carbon nanotubes as the test object with a table-top extreme ultraviolet (EUV) laser operating at 46.9 nm will be discussed. The resolution achieved in this imaging is evaluated with a rigorous correlation image analysis and confirmed with the conventional knife-edge test. The nano-holography presented requires no optics or critical beam alignment; thus the hologram recording scheme is very simple and does not need special sample preparation. In holography, image contrast requires absorption to provide scattering by the illuminating beam. The EUV laser wavelength employed in this experiment (46.9nm) is advantageous because carbon based materials typically exhibit very small attenuation lengths, around 25 nm. The high absorption of

  10. Extreme ultraviolet reflectivity studies of gold on glass and metal substrates

    NASA Technical Reports Server (NTRS)

    Jelinsky, Sharon R.; Malina, Roger F.; Jelinsky, Patrick

    1988-01-01

    The paper reports measurements of the extreme ultraviolet reflectivity of gold from 44 to 920 A at grazing incidence. Gold was deposited using vacuum evaporation and electroplating on substrates of glass and polished nickel, respectively. Measurements are also presented of the extreme ultraviolet reflectivity of electroless nickel in the same wavelength region, where one of the polished nickel substrates was used as a sample. Derived optical constants for evaporated and electroplated gold and electroless nickel are presented. Additional studies of the effects of various contaminants on the EUV reflectivity are also reported. The variations of the optical constants are discussed in terms of density variations, surface roughness and contamination effects. These results ae reported as part of studies for the Extreme Ultraviolet Explorer satellite program to determine acceptance criteria for the EUV optics, contamination budgets and calibration plans.

  11. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Labov, S. E.

    1985-01-01

    Instruments designed to explore different aspects of far and extreme ultraviolet cosmic radiation were studied. The far ultraviolet imager (FUVI) was flown on the Aries sounding rocket. Its unique large format 75mm detector mapped out the far ultraviolet background radiation with a resolution of only a few arc minutes. Analysis of this data indicates to what extent the FUVI background is extra galactic in origin. A power spectrum of the spatial fluctuations will have direct consequences for galactic evolution.

  12. An operations and command systems for the extreme ultraviolet explorer

    NASA Technical Reports Server (NTRS)

    Muscettola, Nicola; Korsmeyer, David J.; Olson, Eric C.; Wong, Gary

    1994-01-01

    About 40% of the budget of a scientific spacecraft mission is usually consumed by Mission Operations & Data Analysis (MO&DA) with MO driving these costs. In the current practice, MO is separated from spacecraft design and comes in focus relatively late in the mission life cycle. As a result, spacecraft may be designed that are very difficult to operate. NASA centers have extensive MO expertise but often lessons learned in one mission are not exploited for other parallel or future missions. A significant reduction of MO costs is essential to ensure a continuing and growing access to space for the scientific community. We are addressing some of these issues with a highly automated payload operations and command system for an existing mission, the Extreme Ultraviolet Explorer (EUVE). EUVE is currently operated jointly by the Goddard Space Flight Center (GSFC), responsible for spacecraft operations, and the Center for Extreme Ultraviolet Astrophysics (CEA) of the University of California, Berkeley, which controls the telescopes and scientific instruments aboard the satellite. The new automated system is being developed by a team including personnel from the NASA Ames Research Center (ARC), the Jet Propulsion Laboratory (JPL) and the Center for EUV Astrophysics (CEA). An important goal of the project is to provide AI-based technology that can be easily operated by nonspecialists in AI. Another important goal is the reusability of the techniques for other missions. Models of the EUVE spacecraft need to be built both for planning/scheduling and for monitoring. In both cases, our modeling tools allow the assembly of a spacecraft model from separate sub-models of the various spacecraft subsystems. These sub-models are reusable; therefore, building mission operations systems for another small satellite mission will require choosing pre-existing modules, reparametrizing them with respect to the actual satellite telemetry information, and reassembling them in a new model. We

  13. Characterization of electrostatic chucks for extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Mulholland, Tom C.; Zeuske, Jacob R.; Vukkadala, Pradeep; Engelstad, Roxann L.

    2009-03-01

    The use of an electrostatic chuck to support and flatten an extreme ultraviolet (EUV) mask during scanning exposure will be a critical component to meet the stringent requirements on image placement errors in the sub-30-nm regime. Consequently, the ability to predict the response of the mask during e-chucking is necessary for the design and implementation of the e-chuck system. This research focuses on characterizing the coefficient of friction between the EUV reticle and the dielectric material of the chuck. A customized tool was constructed to test chuck and reticle samples both in air and in a vacuum chamber. Studies were conducted to identify the friction coefficient at various chucking pressures and to examine the effects of wear caused by repeated measurements on the same location of the reticle surface. All experiments were performed in a cleanroom environment. Results of the friction testing illustrate the range of values to expect for typical EUV reticles and chucks. Finite element (FE) modeling was then used to illustrate the effects of friction on the overall capability of the chuck to flatten the mask. Additional FE simulations demonstrated the magnitude of the friction force needed to ensure that the reticle would not slip during the acceleration / deceleration loading seen in the scanning exposure process.

  14. Extreme Ultraviolet Explorer Right Angle Program observations of cool stars

    NASA Astrophysics Data System (ADS)

    Christian, D. J.; Drake, J. J.; Mathioudakis, M.

    1998-01-01

    The Extreme Ultraviolet Explorer (EUVE) Right Angle Program (RAP) obtains photometric data in four bands centered at 100 (Lexan/B), 200 (Al/Ti/C), 400 (Ti/Sb/Al), and 550 (Sn/SiO) during pointed spectroscopic observations. RAP observations are up to 20 times more sensitive than those in the EUVE all-sky survey. We present RAP observations of two dozen late-type stars. We derive surface fluxes from the Lexan/B and Al/Ti/C count rates and cataloged ROSAT Position Sensitive Proportional Counter (PSPC) data. The EUVE surface fluxes are reasonably correlated with surface fluxes calculated from PSPC measurements. The time variability of the sources has been examined. Most of the sources show no significant variability at the 99 percent confidence level. Flares were detected from the K7 V star Melotte 25 VA 334, the K3 V star V834 Tau (HD 29697), and the K3 + K8 Hyades binary BD +22669. The BD +22669 count rate at the peak of the flare is a factor of 6 higher than the quiescent count rate, with a peak Lexan/B luminosity of 7.9 1029 ergs/s. The V834 Tau flare was detected in both Lexan/B and Al/Ti/C bands. The peak luminosity of the flare is 1.6 1029 and 8 1028 ergs/s for Lexan/B and Al/Ti/C, respectively.

  15. Solar EUV irradiance variability derived from terrestrial far ultraviolet dayglow observations

    NASA Astrophysics Data System (ADS)

    Strickland, D. J.; Lean, J. L.; Meier, R. R.; Christensen, A. B.; Paxton, L. J.; Morrison, D.; Craven, J. D.; Walterscheid, R. L.; Judge, D. L.; McMullin, D. R.

    2004-02-01

    Remotely sensed ultraviolet emissions from the Earth's upper atmosphere are shown to mirror fluctuations in solar EUV irradiance during July 2002, including the overall increase and decrease as the Sun rotated, and episodic increases associated with multiple solar flares. The TIMED/GUVI dayglow observations are used to derive a new quantity, QEUVGUVI, which is a measure of integrated solar EUV electromagnetic energy shortward of 45 nm. Both the absolute QEUVGUVI values and their modulation by solar rotation agree well with the corresponding solar EUV energy estimated by the NRLEUV irradiance variability model. The QEUVGUVI values do not support recent suggestions that the solar EUV irradiances estimated by the model of Hinteregger et al. be increased by a factor of four, nor even a factor of two.

  16. EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

    NASA Astrophysics Data System (ADS)

    Attwood, David

    2004-12-01

    The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical

  17. Extreme Ultra-Violet Spectroscopy of the Lower Solar Atmosphere During Solar Flares (Invited Review)

    NASA Astrophysics Data System (ADS)

    Milligan, Ryan O.

    2015-12-01

    The extreme ultra-violet (EUV) portion of the solar spectrum contains a wealth of diagnostic tools for probing the lower solar atmosphere in response to an injection of energy, particularly during the impulsive phase of solar flares. These include temperature- and density-sensitive line ratios, Doppler-shifted emission lines, nonthermal broadening, abundance measurements, differential emission measure profiles, continuum temperatures and energetics, among others. In this article I review some of the recent advances that have been made using these techniques to infer physical properties of heated plasma at footpoint and ribbon locations during the initial stages of solar flares. I primarily focus on studies that have utilised spectroscopic EUV data from Hinode/EUV Imaging Spectrometer (EIS) and Solar Dynamics Observatory/EUV Variability Experiment (SDO/EVE), and I also provide some historical background and a summary of future spectroscopic instrumentation.

  18. Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle

    NASA Astrophysics Data System (ADS)

    Ko, Ki-Ho; Mo, Soo-Yeon; Kim, In-Seon; Oh, Hye-Keun

    2016-03-01

    The absorption of extreme-ultraviolet (EUV) pellicle could be the most critical problem because the EUV source power is still not good enough for achieving mass production. We found that the transmission loss due to the EUV pellicle could be compensated through proper optical proximity correction (OPC) of a pellicled mask. Patterning results of OPCed masks with different transmission pellicles are shown for various 1D and 2D patterns. From the results, it is clearly shown that we do not need to increase the dose to avoid the throughput loss even if a pellicle which has 80 % one-pass transmission is used. Therefore, the EUV pellicle manufacturing would be much easier because we can use much thicker film with higher absorption.

  19. Performance, structure, and stability of SiC/Al multilayer films for extreme ultraviolet applications.

    PubMed

    Windt, David L; Bellotti, Jeffrey A

    2009-09-10

    We report on the performance, structure and stability of periodic multilayer films containing silicon carbide (SiC) and aluminum (Al) layers designed for use as reflective coatings in the extreme ultraviolet (EUV). We find that SiC/Al multilayers prepared by magnetron sputtering have low stress, good temporal and thermal stability, and provide good performance in the EUV, particularly for applications requiring a narrow spectral bandpass, such as monochromatic solar imaging. Transmission electron microscopy reveals amorphous SiC layers and polycrystalline Al layers having a strong <111> texture, and relatively large roughness associated with the Al crystallites. Fits to EUV reflectance measurements also indicate large interface widths, consistent with the electron microscopy results. SiC/Al multilayers deposited by reactive sputtering with nitrogen comprise Al layers that are nearly amorphous and considerably smoother than films deposited nonreactively, but no improvements in EUV reflectance were obtained. PMID:19745857

  20. Design and performance of the telescope and detector covers on the Extreme Ultraviolet Explorer satellite

    NASA Technical Reports Server (NTRS)

    Tom, James L.

    1994-01-01

    Two cover mechanisms were designed and developed for the Extreme Ultraviolet Explorer (EUVE) science payload to keep the EUVE telescope mirrors and detectors sealed from the atmospheric environment until the spacecraft was placed into orbit. There were four telescope front covers and seven motorized detector covers on the EUVE science payload. The EUVE satellite was launched into orbit in June 1992 and all the covers operated successfully after launch. This success can be attributed to high design margins and extensive testing at each level of assembly. This paper described the design of the telescope front covers and the motorized detector covers. This paper also discusses some of the many design considerations and modifications made as performance and reliability problems became apparent from each phase of testing.

  1. Modeling and measuring the transport and scattering of energetic debris in an extreme ultraviolet plasma source

    NASA Astrophysics Data System (ADS)

    Sporre, John R.; Elg, Daniel T.; Kalathiparambil, Kishor K.; Ruzic, David N.

    2016-01-01

    A theoretical model for describing the propagation and scattering of energetic species in an extreme ultraviolet (EUV) light lithography source is presented. An EUV light emitting XTREME XTS 13-35 Z-pinch plasma source is modeled with a focus on the effect of chamber pressure and buffer gas mass on energetic ion and neutral debris transport. The interactions of the energetic debris species, which is generated by the EUV light emitting plasma, with the buffer gas and chamber walls are considered as scattering events in the model, and the trajectories of the individual atomic species involved are traced using a Monte Carlo algorithm. This study aims to establish the means by which debris is transported to the intermediate focus with the intent to verify the various mitigation techniques currently employed to increase EUV lithography efficiency. The modeling is compared with an experimental investigation.

  2. Colliding laser-produced plasmas as targets for laser-generated extreme ultraviolet sources

    SciTech Connect

    Cummins, T.; O'Gorman, C.; Dunne, P.; Sokell, E.; O'Sullivan, G.; Hayden, P.

    2014-07-28

    Colliding plasmas produced by neodymium-doped yttrium aluminium garnet (Nd:YAG) laser illumination of tin wedge targets form stagnation layers, the physical parameters of which can be controlled to optimise coupling with a carbon dioxide (CO{sub 2}) heating laser pulse and subsequent extreme ultraviolet (EUV) production. The conversion efficiency (CE) of total laser energy into EUV emission at 13.5 nm ± 1% was 3.6%. Neglecting both the energy required to form the stagnation layer and the EUV light produced before the CO{sub 2} laser pulse is incident results in a CE of 5.1% of the CO{sub 2} laser energy into EUV light.

  3. Low-debris, efficient laser-produced plasma extreme ultraviolet source by use of a regenerative liquid microjet target containing tin dioxide (SnO2) nanoparticles

    NASA Astrophysics Data System (ADS)

    Higashiguchi, Takeshi; Dojyo, Naoto; Hamada, Masaya; Sasaki, Wataru; Kubodera, Shoichi

    2006-05-01

    We demonstrated a low-debris, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO2) nanoparticles. By using a low SnO2 concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.

  4. Toward defect-free fabrication of extreme ultraviolet photomasks

    NASA Astrophysics Data System (ADS)

    Qi, Zhengqing John; Rankin, Jed H.; Lawliss, Mark; Badger, Karen D.; Turley, Christina

    2016-04-01

    Defect-free fabrication of extreme ultraviolet (EUV) masks relies on the appropriate detection of native defects and subsequent strategies for their elimination. Commercial unavailability of actinic mask-blank inspection systems motivates the identification of an optical inspection methodology most suitable for finding relevant EUV blank defects. Studies showed that 193-nm wavelength inspection found the greatest number of printable defects as compared with rival higher-wavelength systems, establishing deep ultraviolet inspections as the blank defectivity baseline for subsequent mitigation strategies. Next, defect avoidance via pattern shifting was explored using representative 7-nm node metal/contact layer designs and 193-nm mask-blank inspection results. It was found that a significant percentage of native defects could be avoided only when the design was limited to active patterns (i.e., layouts without dummy fill). Total pattern-defect overlap remained ≤5 when metal layer blanks were chosen from the top 35% least defective substrates, while the majority of blanks remained suitable for contacts layers due to a lower active pattern density. Finally, nanomachining was used to address remaining native/multilayer defects. Native catastrophic defects were shown to recover 40% to 70% of target critical dimension after nanomachining, demonstrating the enormous potential for compensating multilayer defects.

  5. Extreme- and far-ultraviolet environment at shuttle altitudes

    SciTech Connect

    Chakrabarti, S.

    1987-01-01

    The astronomical data obtained by the Far Ultraviolet Space Telescope (FAUST) and the Very Wide Field Camera (VWFC) on board the Spacelab I mission have triggered questions on the natural and induced Extreme and Far Ultraviolet (EUV and FUV) environment of the space shuttle. Moreover, the recent discovery of approx. lk Rayleighs N/sub 2/ Lyman Birge Hopfield (LBH) nightglow emissions by the U.S. Air Force's S3-4 satellite, and subsequent confirmation by the Imaging Spectrometric Observatory (ISO) experiment on the Spacelab I mission have serious implications for the astronomical observations from the shuttle. Since both ISO and S3-4 experiments were conducted from shuttle altitudes, the implied EUV and FUV environment for astronomical observations can be severe. In order to address the question of the suitability of the shuttle as an astronomical platform, data from FAUST and other experiments were examined. It is concluded that the FAUST background is most likely due to the observation of tropical UV arcs, a natural airglow phenomenon. Strategies for future shuttle experiments to overcome this and other natural emissions are discussed.

  6. Astronomy and the Extreme Ultraviolet Explorer satellite

    NASA Technical Reports Server (NTRS)

    Bowyer, S.

    1994-01-01

    The extreme ultraviolet wave band (100 to 912 angstroms) was thought until recently to be useless to astronomy, primarily because the opacity of the interstellar medium would prevent observations at these wavelengths. However, the interstellar medium has been found to be markedly inhomogeneous in both density and ionization state and the sun is fortunately located in a region of low extreme ultraviolet opacity. The Extreme Ultraviolet Explorer, launched in June 1992, has surveyed the sky in this wave band and has detected a wide variety of astronomical sources at considerable distances, including some extragalactic objects. Studies in the extreme ultraviolet band have already begun to increase our understanding of the contents of the universe.

  7. Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source

    NASA Astrophysics Data System (ADS)

    Sasaki, Akira; Sunahara, Atsushi; Furukawa, Hiroyuki; Nishihara, Katsunobu; Fujioka, Shinsuke; Nishikawa, Takeshi; Koike, Fumihiro; Ohashi, Hayato; Tanuma, Hajime

    2010-06-01

    Atomic processes in Sn plasmas are investigated for application to extreme-ultraviolet (EUV) light sources used in microlithography. We develop a full collisional radiative (CR) model of Sn plasmas based on calculated atomic data using Hebrew University Lawrence Livermore Atomic Code (HULLAC). Resonance and satellite lines from singly and multiply excited states of Sn ions, which contribute significantly to the EUV emission, are identified and included in the model through a systematic investigation of their effect on the emission spectra. The wavelengths of the 4d-4f+4p-4d transitions of Sn5+ to Sn13+ are investigated, because of their importance for determining the conversion efficiency of the EUV source, in conjunction with the effect of configuration interaction in the calculation of atomic structure. Calculated emission spectra are compared with those of charge exchange spectroscopy and of laser produced plasma EUV sources. The comparison is also carried out for the opacity of a radiatively heated Sn sample. A reasonable agreement is obtained between calculated and experimental EUV emission spectra observed under the typical condition of EUV sources with the ion density and ionization temperature of the plasma around 1018 cm-3 and 20 eV, respectively, by applying a wavelength correction to the resonance and satellite lines. Finally, the spectral emissivity and opacity of Sn plasmas are calculated as a function of electron temperature and ion density. The results are useful for radiation hydrodynamics simulations for the optimization of EUV sources.

  8. LARGE-SCALE EXTREME-ULTRAVIOLET DISTURBANCES ASSOCIATED WITH A LIMB CORONAL MASS EJECTION

    SciTech Connect

    Dai, Y.; Auchere, F.; Vial, J.-C.; Tang, Y. H.; Zong, W. G.

    2010-01-10

    We present composite observations of a coronal mass ejection (CME) and the associated large-scale extreme-ultraviolet (EUV) disturbances on 2007 December 31 by the Extreme-ultraviolet Imager (EUVI) and COR1 coronagraph on board the recent Solar Terrestrial Relations Observatory mission. For this limb event, the EUV disturbances exhibit some typical characteristics of EUV Imaging Telescope waves: (1) in the 195 A bandpass, diffuse brightenings are observed propagating oppositely away from the flare site with a velocity of approx260 km s{sup -1}, leaving dimmings behind; (2) when the brightenings encounter the boundary of a polar coronal hole, they stop there to form a stationary front. Multi-temperature analysis of the propagating EUV disturbances favors a heating process over a density enhancement in the disturbance region. Furthermore, the EUVI-COR1 composite display shows unambiguously that the propagation of the diffuse brightenings coincides with a large lateral expansion of the CME, which consequently results in a double-loop-structured CME leading edge. Based on these observational facts, we suggest that the wave-like EUV disturbances are a result of magnetic reconfiguration related to the CME liftoff rather than true waves in the corona. Reconnections between the expanding CME magnetic field lines and surrounding quiet-Sun magnetic loops account for the propagating diffuse brightenings; dimmings appear behind them as a consequence of volume expansion. X-ray and radio data provide us with complementary evidence.

  9. Extreme Ultraviolet Imaging Telescope (EIT)

    NASA Technical Reports Server (NTRS)

    Lemen, J. R.; Freeland, S. L.

    1997-01-01

    Efforts concentrated on development and implementation of the SolarSoft (SSW) data analysis system. From an EIT analysis perspective, this system was designed to facilitate efficient reuse and conversion of software developed for Yohkoh/SXT and to take advantage of a large existing body of software developed by the SDAC, Yohkoh, and SOHO instrument teams. Another strong motivation for this system was to provide an EIT analysis environment which permits coordinated analysis of EIT data in conjunction with data from important supporting instruments, including Yohkoh/SXT and the other SOHO coronal instruments; CDS, SUMER, and LASCO. In addition, the SSW system will support coordinated EIT/TRACE analysis (by design) when TRACE data is available; TRACE launch is currently planned for March 1998. Working with Jeff Newmark, the Chianti software package (K.P. Dere et al) and UV /EUV data base was fully integrated into the SSW system to facilitate EIT temperature and emission analysis.

  10. Active galaxies observed during the Extreme Ultraviolet Explorer all-sky survey

    NASA Technical Reports Server (NTRS)

    Marshall, H. L.; Fruscione, A.; Carone, T. E.

    1995-01-01

    We present observations of active galactic nuclei (AGNs) obtained with the Extreme Ultraviolet Explorer (EUVE) during the all-sky survey. A total of 13 sources were detected at a significance of 2.5 sigma or better: seven Seyfert galaxies, five BL Lac objects, and one quasar. The fraction of BL Lac objects is higher in our sample than in hard X-ray surveys but is consistent with the soft X-ray Einstein Slew Survey, indicating that the main reason for the large number of BL Lac objects in the extreme ulktraviolet (EUV) and soft X-ray bands is their steeper X-ray spectra. We show that the number of AGNs observed in both the EUVE and ROSAT Wide Field Camera surveys can readily be explained by modelling the EUV spectra with a simple power law in the case of BL Lac objects and with an additional EUV excess in the case of Seyferts and quasars. Allowing for cold matter absorption in Seyfert galaxy hosts drive up the inferred average continuum slope to 2.0 +/- 0.5 (at 90% confidence), compared to a slope of 1.0 usually found from soft X-ray data. If Seyfert galaxies without EUV excesses form a significant fraction of the population, then the average spectrum of those with bumps should be even steeper. We place a conservative limit on neutral gas in BL Lac objects: N(sub H) less than 10(exp 20)/sq cm.

  11. Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers

    NASA Astrophysics Data System (ADS)

    Li, W.; Urbanski, L.; Marconi, M. C.

    2015-12-01

    Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics. In this review, we will describe the implementation of a compact EUV lithography system capable of printing features with sub-50 nm resolution using Talbot imaging. This compact system is capable of producing consistent defect-free samples in a reliable and effective manner. Examples of different patterns and structures fabricated with this method will be presented.

  12. Invited Article: Progress in coherent lithography using table-top extreme ultraviolet lasers.

    PubMed

    Li, W; Urbanski, L; Marconi, M C

    2015-12-01

    Compact (table top) lasers emitting at wavelengths below 50 nm had expanded the spectrum of applications in the extreme ultraviolet (EUV). Among them, the high-flux, highly coherent laser sources enabled lithographic approaches with distinctive characteristics. In this review, we will describe the implementation of a compact EUV lithography system capable of printing features with sub-50 nm resolution using Talbot imaging. This compact system is capable of producing consistent defect-free samples in a reliable and effective manner. Examples of different patterns and structures fabricated with this method will be presented. PMID:26723999

  13. Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

    DOEpatents

    Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

    1999-01-01

    A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

  14. Note: Enhancement of the extreme ultraviolet emission from a potassium plasma by dual laser irradiation

    SciTech Connect

    Higashiguchi, Takeshi Yamaguchi, Mami; Otsuka, Takamitsu; Nagata, Takeshi; Ohashi, Hayato; Li, Bowen; D’Arcy, Rebekah; Dunne, Padraig; O’Sullivan, Gerry

    2014-09-15

    Emission spectra from multiply charged potassium ions ranging from K{sup 3+} to K{sup 5+} have been obtained in the extreme ultraviolet (EUV) spectral region. A strong emission feature peaking around 38 nm, corresponding to a photon energy of 32.6 eV, is the dominant spectral feature at time-averaged electron temperatures in the range of 8−12 eV. The variation of this emission with laser intensity and the effects of pre-pulses on the relative conversion efficiency (CE) have been explored experimentally and indicate that an enhancement of about 30% in EUV CE is readily attainable.

  15. Design, fabrication and performance of two grazing incidence telescopes for celestial extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Lampton, M.; Cash, W.; Malina, R. F.; Bowyer, S.

    1977-01-01

    The design and performance of grazing incidence telescopes for celestial extreme ultraviolet (EUV) astronomy are described. The telescopes basically consist of a star tracker, collimator, grazing incidence mirror, vacuum box lid, vacuum housing, filters, a ranicon detector, an electronics box, and an aspect camera. For the survey mirror a Wolter-Schwarzschild type II configuration was selected. Diamond-turning was used for mirror fabrication, a technique which machines surfaces to the order of 10 microns over the required dimensions. The design of the EUV spectrometer is discussed with particular reference to the optics for a primarily spectroscopic application and the fabrication of the f/10 optics.

  16. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    SciTech Connect

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-10-31

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  17. Spin-on-glass coatings for the generation of super-polishedsubstrates for extreme ultraviolet optics

    SciTech Connect

    Salmassi, Farhad; Naulleau, Patrick P.; Gullikson, Eric M.

    2005-01-01

    Substrates intended for use as extreme ultraviolet (EUV) optics have extremely stringent requirements in terms of finish. These requirements can dramatically increase the cost and fabrication time, especially when non-conventional shapes, such as toroids, are required. Here we present a spin-on-glass resist process capable of generating super-polished parts from inexpensive substrates. The method has been used to render diamond-turned substrates compatible for use as EUV optics. Toroidal diamond-turned optics with starting rms roughness in the 3.3 to 3.7 nm range have been smoothed to the 0.4 to 0.6 nm range. EUV reflectometry characterization of these optics has demonstrated reflectivities of approximately 63%.

  18. Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source.

    PubMed

    Higashiguchi, Takeshi; Hamada, Masaya; Kubodera, Shoichi

    2007-03-01

    A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 microm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2 x 10(11) Wcm(2) with a spot diameter of 175 microm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal. PMID:17411231

  19. Development of a liquid tin microjet target for an efficient laser-produced plasma extreme ultraviolet source

    NASA Astrophysics Data System (ADS)

    Higashiguchi, Takeshi; Hamada, Masaya; Kubodera, Shoichi

    2007-03-01

    A regenerative tin liquid microjet target was developed for a high average power extreme ultraviolet (EUV) source. The diameter of the target was smaller than 160 μm and good vacuum lower than 0.5 Pa was maintained during the operation. A maximum EUV conversion efficiency of 1.8% at the Nd:yttrium-aluminum-garnet laser intensity of around 2×1011 W/cm2 with a spot diameter of 175 μm (full width at half maximum) was observed. The angular distribution of the EUV emission remained almost isotropic, whereas suprathermal ions mainly emerged toward the target normal.

  20. Extreme ultraviolet spectroscopy and photometry of VV Puppis during a high accretion state

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Szkody, Paula; Sion, Edward M.; Long, Knox S.

    1995-01-01

    We determine the physical properties of the accretion region of the AM Her-type binary VV Puppis using extreme ultraviolet (EUV) medium-resolution spectroscopy and photometry obtained with the Extreme Ultraviolet Explorer (EUVE) observatory. The EUV continuum from VV Pup was detected in the wavelength range from 75 to 135 A and was simultaneously recorded with the Deep Survey/Spectrometer (DS/S) imaging telescope, allowing for the extraction of an accurate light curve. VV Pup appeared to have entered a high-accretion state just prior to the pointed EUVE observations. We use the EUV light curve to infer the diameter of the accretion region (d = 220 km) assuming a hemispherical geometry and a radius of 9000 km for the white dwarf. We perform a model atmosphere analysis and, based on the light curve properties and assuming a distance of 145 pc, we derive an effective temperature of the accretion region in the range 270,000 is less than T(sub eff) is less than 360,000 K and a neutral hydrogen column density in the local interstellar medium of n(sub H) = 1.9 - 3.7 x 10(exp 19)/sq cm. The total EUV/soft X-ray energy radiated by the accretion region is approximately 3.5 x 10(exp 32) ergs/s. Our results provide a first verification of past suggestions that deep heating of the white dwarf surface produces the soft X-ray flux from the polars. We present a possible detection of O VI absortion features, and we suggest that extensive EUVE observations targeting high-accretion events may result in oxygen and heavier element abundance determination in the accretion region.

  1. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

    NASA Astrophysics Data System (ADS)

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-08-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam.

  2. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength

    PubMed Central

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-01-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam. PMID:27501749

  3. Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength.

    PubMed

    Fan, Daniel; Wang, Li; Ekinci, Yasin

    2016-01-01

    Bessel beams are nondiffracting light beams with large depth-of-focus and self-healing properties, making them suitable as a serial beam writing tool over surfaces with arbitrary topography. This property breaks the inherent resolution vs. depth-of-focus tradeoff of photolithography. One approach for their formation is to use circularly symmetric diffraction gratings. Such a ring grating was designed and fabricated for the extreme ultraviolet (EUV) wavelength of 13.5 nm, a candidate wavelength for future industrial lithography. Exposure of the aerial images showed that a Bessel beam with an approximately 1 mm long z-invariant central core of 223 nm diameter had been achieved, in good agreement with theory. Arbitrary patterns were written using the Bessel spot, demonstrating possible future application of Bessel beams for serial beam writing. Lithographic marks of ~30 nm size were also observed using a high resolution Bessel beam. PMID:27501749

  4. Universal EUV in-band intensity detector

    DOEpatents

    Berger, Kurt W.

    2004-08-24

    Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

  5. Far and extreme ultraviolet astronomy with ORFEUS

    NASA Technical Reports Server (NTRS)

    Kraemer, G.; Barnstedt, J.; Eberhard, N.; Grewing, M.; Gringel, W.; Haas, C.; Kaelble, A.; Kappelmann, N.; Petrik, J.; Appenzeller, I.

    1990-01-01

    ORFEUS (Orbiting and Retrievable Far and Extreme Ultraviolet Spectrometer) is a 1 m normal incidence telescope for spectroscopic investigations of cosmic sources in the far and extreme ultraviolet spectral range. The instrument will be integrated into the freeflyer platform ASTRO-SPAS. ORFEUS-SPAS is scheduled with STS ENDEAVOUR in September 1992. We describe the telescope with its two spectrometer and their capabilities i.e., spectral range, resolution and overall sensitivity. The main classes of objects to be observed with the instrument are discussed and two examples of simulated spectra for the white dwarf HZ43 and an O9-star in LMC are shown.

  6. Laser produced plasma for efficient extreme ultraviolet light sources

    SciTech Connect

    Donnelly, Tony; Cummins, Thomas; O' Gorman, Colm; Li Bowen; Harte, Colm S.; O'Reilly, Fergal; Sokell, Emma; Dunne, Padraig; O'Sullivan, Gerry

    2012-05-25

    Extreme ultraviolet emission from laser produced plasma and their relevance to EUV source development is discussed. The current state of the field for Sn LPP sources operating at 13.5 nm is described and initial results are given for EUV emission from CO{sub 2} laser irradiation of a bulk Sn target. A maximum conversion efficiency of 1.7% has been measured and the influence of the CO{sub 2} laser temporal profile on the CE is discussed. A double pulse irradiation scheme is shown to increase CE up to a maximum value of 2.1% for an optimum prepulse - pulse delay of 150 ns. The emergence of a new EUVL source wavelength at 6.7 nm based on Gd and Tb LPPs has been outlined. An initial experiment investigating picosecond laser irradiation as a means to produce strong 6.7 nm emission from a Gd{sub 2}O{sub 3} target has been performed and verified.

  7. The joint astrophysical plasmadynamic experiment extreme ultraviolet spectrometer: resolving power

    NASA Astrophysics Data System (ADS)

    Berendse, F. B.; Cruddace, R. G.; Kowalski, M. P.; Yentis, D. J.; Hunter, W. R.; Fritz, G. G.; Siegmund, O.; Heidemann, K.; Lenke, R.; Seifert, A.; Barbee, T. W., Jr.

    2006-06-01

    The Joint astrophysical Plasmadynamic EXperiment (J-PEX) is a high-resolution extreme ultraviolet (EUV) spectrometer (220-245 Å) used for the study of white dwarf atmospheres. Significant improvements have been achieved in both the normal-incidence gratings and the focal-plane detector since its first successful sounding rocket flight in 2001. The spherical laminar gratings have been replaced by paraboloidal gratings. The substrates of the new gratings have measured slope errors less than 0.35 arcsec. The gratings were recorded holographically and the rulings transferred into the silica substrates by ion etching. This procedure was followed by polymer overcoat to reduce the blaze angle of the groove profile. The detector uses microchannel plates with 6 μm pores and a cross-strip anode, providing 17.9 μm resolution in the dispersion direction. The detector employs a KBr photocathode with a projected efficiency of 0.24 at 256 Å. Using ray tracing simulations, we predict the resolving power expected from the spectrometer during upcoming EUV calibrations with a He II discharge source.

  8. Imaging characteristics of the Extreme Ultraviolet Explorer microchannel plate detectors

    NASA Technical Reports Server (NTRS)

    Vallerga, J. V.; Kaplan, G. C.; Siegmund, O. H. W.; Lampton, M.; Malina, R. F.

    1989-01-01

    The Extreme Ultraviolet Explorer (EUVE) satellite will conduct an all-sky survey over the wavelength range from 70 A to 760 A using four grazing-incidence telescopes and seven microchannel-plate (MCP) detectors. The imaging photon-counting MCP detectors have active areas of 19.6 cm2. Photon arrival position is determined using a wedge-and-strip anode and associated pulse-encoding electronics. The imaging characteristics of the EUVE flight detectors are presented including image distortion, flat-field response, and spatial differential nonlinearity. Also included is a detailed discussion of image distortions due to the detector mechanical assembly, the wedge-and-strip anode, and the electronics. Model predictions of these distortions are compared to preflight calibration images which show distortions less than 1.3 percent rms of the detector diameter of 50 mm before correction. The plans for correcting these residual detector image distortions to less than 0.1 percent rms are also presented.

  9. Contamination control approach for the Extreme Ultraviolet Explorer satellite instrumentation

    NASA Technical Reports Server (NTRS)

    Mrowka, Stan; Jelinsky, Sharon; Jelinsky, Patrick; Malina, Roger F.

    1987-01-01

    The Extreme Ultraviolet Explorer will perform an all-sky survey and spectroscopic observations over the wavelength range 80-900A. Hydrocarbon and particulate contamination will potentially affect the throughput and signal to noise ratio of the signal detected by the instruments. A witness sample program is here used to investigate and monitor the effects of specific contaminants on EUV reflectivity. Witness samples were intentionally contaminated with thin layers of pump oil. An oil layer 150 A thick was applied and found to evaporate over 8 hours. The EUV reflectivity and imaging properties were then measured and found to be acceptable for grazing angles between 5 and 30 deg. In a second test, layers 500 A thick were deposited and then allowed to evaporate in vacuum; once the oil had evaporated to at least 350 A, the final sample reflectivity was degraded less than 10 percent, but the image was degraded severely by scattering. An outline of the contamination control program is also presented.

  10. Characterization of material ablation driven by laser generated intense extreme ultraviolet light

    NASA Astrophysics Data System (ADS)

    Tanaka, Nozomi; Masuda, Masaya; Deguchi, Ryo; Murakami, Masakatsu; Sunahara, Atsushi; Fujioka, Shinsuke; Yogo, Akifumi; Nishimura, Hiroaki

    2015-09-01

    We present a comparative study on the hydrodynamic behaviour of plasmas generated by material ablation by the irradiation of nanosecond extreme ultraviolet (EUV or XUV) or infrared laser pulses on solid samples. It was clarified that the difference in the photon energy deposition and following material heating mechanism between these two lights result in the difference in the plasma parameters and plasma expansion characteristics. Silicon plate was ablated by either focused intense EUV pulse (λ = 9-25 nm, 10 ns) or laser pulse (λ = 1064 nm, 10 ns), both with an intensity of ˜109 W/cm2. Both the angular distributions and energy spectra of the expanding ions revealed that the photoionized plasma generated by the EUV light differs significantly from that produced by the laser. The laser-generated plasma undergoes spherical expansion, whereas the EUV-generated plasma undergoes planar expansion in a comparatively narrow angular range. It is presumed that the EUV radiation is transmitted through the expanding plasma and directly photoionizes the samples in the solid phase, consequently forming a high-density and high-pressure plasma. Due to a steep pressure gradient along the direction of the target normal, the EUV plasma expands straightforward resulting in the narrower angular distribution observed.

  11. Optical proximity correction for extreme ultra-violet mask with pellicle

    NASA Astrophysics Data System (ADS)

    Mo, Soo-Yeon; Kim, In-Seon; Oh, Hye-Keun

    2015-10-01

    Extreme ultraviolet (EUV) lithography is considered as one of the viable solutions for production of the next generation integrated devices. EUV mask defect control becomes more critical issue in order to sustain the quality of wafer fabrication process. Since pellicle is the essential component to prevent patterning deformations caused by particle defects on EUV mask[1-2], EUV OPC (optical proximity correction) that takes into account for pellicle effects on imaging quality is required for achieving better pattern fidelity and critical dimension control. In this study, image blurring effect induced by the EUV mask pellicle on mask pattern structures was investigated and it was found that the localized short-range OPC using commercial software performed as desired considering transmission intensity loss due to pellicle. For experiment, edge placement error differences of the same 2D logic patterns with 16 nm half pitch with and without pellicle were compared. Finally, a method was suggested how patterning throughput loss caused by the transmission loss can be compensated by EUV OPC, which may allow pellicle transmission even below 90%.

  12. Characterization of material ablation driven by laser generated intense extreme ultraviolet light

    SciTech Connect

    Tanaka, Nozomi Masuda, Masaya; Deguchi, Ryo; Murakami, Masakatsu; Fujioka, Shinsuke; Yogo, Akifumi; Nishimura, Hiroaki; Sunahara, Atsushi

    2015-09-14

    We present a comparative study on the hydrodynamic behaviour of plasmas generated by material ablation by the irradiation of nanosecond extreme ultraviolet (EUV or XUV) or infrared laser pulses on solid samples. It was clarified that the difference in the photon energy deposition and following material heating mechanism between these two lights result in the difference in the plasma parameters and plasma expansion characteristics. Silicon plate was ablated by either focused intense EUV pulse (λ = 9–25 nm, 10 ns) or laser pulse (λ = 1064 nm, 10 ns), both with an intensity of ∼10{sup 9 }W/cm{sup 2}. Both the angular distributions and energy spectra of the expanding ions revealed that the photoionized plasma generated by the EUV light differs significantly from that produced by the laser. The laser-generated plasma undergoes spherical expansion, whereas the EUV-generated plasma undergoes planar expansion in a comparatively narrow angular range. It is presumed that the EUV radiation is transmitted through the expanding plasma and directly photoionizes the samples in the solid phase, consequently forming a high-density and high-pressure plasma. Due to a steep pressure gradient along the direction of the target normal, the EUV plasma expands straightforward resulting in the narrower angular distribution observed.

  13. Prospective EUV observations of hot DA white dwarfs with the EUV Explorer

    NASA Technical Reports Server (NTRS)

    Finley, David S.; Malina, Roger F.; Bowyer, Stuart

    1987-01-01

    The Extreme Ultraviolet Explorer (EUVE) will perform a high sensitivity EUV all-sky survey. A major category of sources which will be detected with the EUVE instruments consists of hot white dwarfs. Detailed preliminary studies of synthetic EUV observations of white dwarfs have been carried out using the predicted EUVE instrumental response functions. Using available information regarding space densities of white dwarfs and the distribution of neutral hydrogen in the interstellar medium, the numbers of DA white dwarfs which will be detectable in the different EUV bandpasses have been estimated.

  14. Quality Control of EUVE Databases

    NASA Astrophysics Data System (ADS)

    John, Linda M.

    1993-01-01

    The publicly accessible databases for the Extreme Ultraviolet Explorer (EUVE) include: the EUVE Archive Mailserver, the Center for EUV Astrophysics ftp site, the EUVE Guest Observer Mailserver, and the Astronomical Data System node. The EUVE Performance Assurance team is responsible for verifying that these public databases are working properly and that the public availability of EUVE data contained therein does not infringe any data rights which may have been assigned. In this paper, we describe the quality assurance (QA) procedures we have developed from approaching QA as a service organization; this approach reflects the overall EUVE philosophy of QA integrated into normal operating procedures, rather than imposed as an external, post-facto, control mechanism.

  15. Extreme Ultraviolet Spectra of Solar Flares from the Extreme Ultraviolet Spectroheliograph SPIRIT Onboard the CORONAS-F Satellite

    NASA Astrophysics Data System (ADS)

    Shestov, S.; Reva, A.; Kuzin, S.

    2014-01-01

    We present detailed extreme ultraviolet (EUV) spectra of four large solar flares: M5.6, X1.3, X3.4, and X17 classes in the spectral ranges 176-207 Å and 280-330 Å. These spectra were obtained by the slitless spectroheliograph SPIRIT onboard the CORONAS-F satellite. To our knowledge, these are the first detailed EUV spectra of large flares obtained with a spectral resolution of ~0.1 Å. We performed a comprehensive analysis of the obtained spectra and provide identification of the observed spectral lines. The identification was performed based on the calculation of synthetic spectra (the CHIANTI database was used), with simultaneous calculations of the differential emission measure (DEM) and density of the emitting plasma. More than 50 intense lines are present in the spectra that correspond to a temperature range of T = 0.5-16 MK most of the lines belong to Fe, Ni, Ca, Mg, and Si ions. In all the considered flares, intense hot lines from Ca XVII, Ca XVIII, Fe XX, Fe XXII, and Fe XXIV are observed. The calculated DEMs have a peak at T ~ 10 MK. The densities were determined using Fe XI-Fe XIII lines and averaged 6.5 × 109 cm-3. We also discuss the identification, accuracy, and major discrepancies of the spectral line intensity prediction.

  16. Extreme ultraviolet spectra of solar flares from the extreme ultraviolet spectroheliograph SPIRIT onboard the CORONAS-F satellite

    SciTech Connect

    Shestov, S.; Kuzin, S.; Reva, A.

    2014-01-01

    We present detailed extreme ultraviolet (EUV) spectra of four large solar flares: M5.6, X1.3, X3.4, and X17 classes in the spectral ranges 176-207 Å and 280-330 Å. These spectra were obtained by the slitless spectroheliograph SPIRIT onboard the CORONAS-F satellite. To our knowledge, these are the first detailed EUV spectra of large flares obtained with a spectral resolution of ∼0.1 Å. We performed a comprehensive analysis of the obtained spectra and provide identification of the observed spectral lines. The identification was performed based on the calculation of synthetic spectra (the CHIANTI database was used), with simultaneous calculations of the differential emission measure (DEM) and density of the emitting plasma. More than 50 intense lines are present in the spectra that correspond to a temperature range of T = 0.5-16 MK; most of the lines belong to Fe, Ni, Ca, Mg, and Si ions. In all the considered flares, intense hot lines from Ca XVII, Ca XVIII, Fe XX, Fe XXII, and Fe XXIV are observed. The calculated DEMs have a peak at T ∼ 10 MK. The densities were determined using Fe XI-Fe XIII lines and averaged 6.5 × 10{sup 9} cm{sup –3}. We also discuss the identification, accuracy, and major discrepancies of the spectral line intensity prediction.

  17. The ion microscope as a tool for quantitative measurements in the extreme ultraviolet

    PubMed Central

    Tsatrafyllis, N.; Bergues, B.; Schröder, H.; Veisz, L.; Skantzakis, E.; Gray, D.; Bodi, B.; Kuhn, S.; Tsakiris, G. D.; Charalambidis, D.; Tzallas, P.

    2016-01-01

    We demonstrate a tool for quantitative measurements in the extreme ultraviolet (EUV) spectral region measuring spatially resolved atomic ionization products at the focus of an EUV beam. The ionizing radiation is a comb of the 11th–15th harmonics of a Ti:Sapphire femtosecond laser beam produced in a Xenon gas jet. The spatial ion distribution at the focus of the harmonics is recorded using an ion microscope. Spatially resolved single- and two-photon ionization products of Argon and Helium are observed. From such ion distributions single- and two-photon generalized cross sections can be extracted by a self-calibrating method. The observation of spatially resolved two-EUV-photon ionization constitutes an initial step towards future single-shot temporal characterization of attosecond pulses. PMID:26868370

  18. Behavior of SiO{sub 2} nanostructures under intense extreme ultraviolet illumination

    SciTech Connect

    Heun, S.; Kremmer, S.; Ercolani, D.; Wurmbauer, H.; Teichert, C.

    2005-05-15

    The stability of conducting atomic force microscope (C-AFM)-induced surface modifications of thermally grown SiO{sub 2} under intense illumination in the extreme ultraviolet (EUV) is investigated with low-energy electron microscopy (LEEM) and x-ray photoemission electron microscopy (XPEEM). With LEEM we find that the protrusions are heavily charged after their formation, but this charge is annihilated after exposure of the sample to short pulses of EUV radiation. The spectra obtained from XPEEM reveal that the stripes formed by C-AFM consist of SiO{sub 2}. After extended EUV exposure, a radiation-induced desorption of the stripes as well as a desorption of the thermal oxide is observed.

  19. Numerical evaluation of a 13.5-nm high-brightness microplasma extreme ultraviolet source

    SciTech Connect

    Hara, Hiroyuki Arai, Goki; Dinh, Thanh-Hung; Higashiguchi, Takeshi; Jiang, Weihua; Miura, Taisuke; Endo, Akira; Ejima, Takeo; Li, Bowen; Dunne, Padraig; O'Sullivan, Gerry; Sunahara, Atsushi

    2015-11-21

    The extreme ultraviolet (EUV) emission and its spatial distribution as well as plasma parameters in a microplasma high-brightness light source are characterized by the use of a two-dimensional radiation hydrodynamic simulation. The expected EUV source size, which is determined by the expansion of the microplasma due to hydrodynamic motion, was evaluated to be 16 μm (full width) and was almost reproduced by the experimental result which showed an emission source diameter of 18–20 μm at a laser pulse duration of 150 ps [full width at half-maximum]. The numerical simulation suggests that high brightness EUV sources should be produced by use of a dot target based microplasma with a source diameter of about 20 μm.

  20. Methods and apparatus for use with extreme ultraviolet light having contamination protection

    DOEpatents

    Chilese, Francis C.; Torczynski, John R.; Garcia, Rudy; Klebanoff, Leonard E.; Delgado, Gildardo R.; Rader, Daniel J.; Geller, Anthony S.; Gallis, Michail A.

    2016-07-12

    An apparatus for use with extreme ultraviolet (EUV) light comprising A) a duct having a first end opening, a second end opening and an intermediate opening intermediate the first end opening the second end opening, B) an optical component disposed to receive EUV light from the second end opening or to send light through the second end opening, and C) a source of low pressure gas at a first pressure to flow through the duct, the gas having a high transmission of EUV light, fluidly coupled to the intermediate opening. In addition to or rather than gas flow the apparatus may have A) a low pressure gas with a heat control unit thermally coupled to at least one of the duct and the optical component and/or B) a voltage device to generate voltage between a first portion and a second portion of the duet with a grounded insulative portion therebetween.

  1. 13 Years of SOHO/CELIAS/SEM Calibrated Solar Extreme Ultraviolet Irradiance Data

    NASA Astrophysics Data System (ADS)

    Judge, D.; Didkovsky, L.; Wieman, S.; Gangopadhyay, P.

    2008-12-01

    A verified and updated version of the calibrated SOHO/CELIAS/SEM (absolute) solar extreme ultraviolet (EUV) measurements from the beginning of the mission in 1996 through the present is available at the University of Southern California Space Sciences Center website. To complete this new version, six (1999- 2006) sounding rocket under-flights were analyzed using measurements from both a very stable Rare Gas (Ne) Ionization Cell (RGIC) and a clone of the flight SEM instrument. These sounding rocket under-flights have provided a number of reference points that have been compared with the solar flux data published on our web site (last revised in 2000). These reference points are in good agreement with the solar cycle EUV flux for the 30.4 nm first order (26 nm to 34 nm) SEM channels, indicating a very small (less than 1 percent) averaged difference from the published flux for the six under-flights. Thirteen years of continuous and accurate SEM data will continue to provide important information about short term (solar flares) and long term (solar cycle) changes of EUV solar irradiance, and will be used for advancing solar models, for more accurate Earth atmosphere drag models, ionization proxies, and atmospheric dynamics generally, and will also provide solar EUV measurement overlap with the new SDO Extreme ultraviolet Variability Experiment (EVE), to be launched in 2009.

  2. Absolute sensitivity calibration of vacuum and extreme ultraviolet spectrometer systems and Z(eff) measurement based on bremsstrahlung continuum in HL-2A tokamak.

    PubMed

    Zhou, Hangyu; Cui, Zhengying; Morita, Shigeru; Fu, Bingzhong; Goto, Motoshi; Sun, Ping; Dong, Chunfeng; Gao, Yadong; Xu, Yuan; Lu, Ping; Yang, Qingwei; Duan, Xuru

    2012-10-01

    A grazing-incidence flat-field extreme ultraviolet (EUV) spectrometer has been newly developed in HL-2A tokamak. Typical spectral lines are observed from intrinsic impurities of carbon, oxygen, iron, and extrinsic impurity of helium in the wavelength range of 20 Å-500 Å. Bremsstrahlung continuum is measured at different electron densities of HL-2A discharges to calibrate absolute sensitivity of the EUV spectrometer system and to measure effective ionic charge, Z(eff). The sensitivity of a vacuum ultraviolet (VUV) spectrometer system is also absolutely calibrated in overlapped wavelength range of 300 Å-500 Å by comparing the intensity between VUV and EUV line emissions. PMID:23126850

  3. Absolute sensitivity calibration of vacuum and extreme ultraviolet spectrometer systems and Z{sub eff} measurement based on bremsstrahlung continuum in HL-2A tokamak

    SciTech Connect

    Zhou Hangyu; Cui Zhengying; Fu Bingzhong; Sun Ping; Gao Yadong; Xu Yuan; Lu Ping; Yang Qingwei; Duan Xuru; Morita, Shigeru; Goto, Motoshi; Dong Chunfeng

    2012-10-15

    A grazing-incidence flat-field extreme ultraviolet (EUV) spectrometer has been newly developed in HL-2A tokamak. Typical spectral lines are observed from intrinsic impurities of carbon, oxygen, iron, and extrinsic impurity of helium in the wavelength range of 20 A-500 A. Bremsstrahlung continuum is measured at different electron densities of HL-2A discharges to calibrate absolute sensitivity of the EUV spectrometer system and to measure effective ionic charge, Z{sub eff}. The sensitivity of a vacuum ultraviolet (VUV) spectrometer system is also absolutely calibrated in overlapped wavelength range of 300 A-500 A by comparing the intensity between VUV and EUV line emissions.

  4. On the nature of the extreme-ultraviolet late phase of solar flares

    SciTech Connect

    Li, Y.; Ding, M. D.; Guo, Y.; Dai, Y.

    2014-10-01

    The extreme-ultraviolet (EUV) late phase of solar flares is a second peak of warm coronal emissions (e.g., Fe XVI) for many minutes to a few hours after the GOES soft X-ray peak. It was first observed by the EUV Variability Experiment on board the Solar Dynamics Observatory (SDO). The late-phase emission originates from a second set of longer loops (late-phase loops) that are higher than the main flaring loops. It is suggested to be caused by either additional heating or long-lasting cooling. In this paper, we study the role of long-lasting cooling and additional heating in producing the EUV late phase using the enthalpy based thermal evolution of loops model. We find that a long cooling process in late-phase loops can well explain the presence of the EUV late-phase emission, but we cannot exclude the possibility of additional heating in the decay phase. Moreover, we provide two preliminary methods based on the UV and EUV emissions from the Atmospheric Imaging Assembly on board SDO to determine whether or not additional heating plays a role in the late-phase emission. Using nonlinear force-free field modeling, we study the magnetic configuration of the EUV late phase. It is found that the late phase can be generated either in hot spine field lines associated with a magnetic null point or in large-scale magnetic loops of multipolar magnetic fields. In this paper, we also discuss why the EUV late phase is usually observed in warm coronal emissions and why the majority of flares do not exhibit an EUV late phase.

  5. Diffuse Extreme-Ultraviolet Emission from the Coma Cluster: Evidence for Rapidly Cooling Gases at Submegakelvin Temperatures

    PubMed

    Lieu; Mittaz; Bowyer; Breen; Lockman; Murphy; Hwang

    1996-11-22

    The central region of the Coma cluster of galaxies was observed in the energy band from 0.065 to 0.245 kiloelectron volts by the Deep Survey telescope aboard the Extreme Ultraviolet Explorer. A diffuse emission halo of angular diameter approximately 30 arc minutes was detected. The extreme-ultraviolet (EUV) emission level exceeds that expected from the x-ray temperature gas in Coma. This halo suggests the presence of two more phases in the emitting gas, one at a temperature of approximately 2 x 10(6) kelvin and the other at approximately 8 x 10(5) kelvin. The latter phase cools rapidly and, in steady state, would have produced cold matter with a mass of approximately 10(14) solar masses within the EUV halo. Although a similar EUV enhancement was discovered in the Virgo cluster, this detection in Coma applies to a noncooling flow system. PMID:8910264

  6. EUVE Outsourced Extended Mission

    NASA Astrophysics Data System (ADS)

    Malina, R. F.; Biroscak, D.; Herz, A.; Christian, D.; Kaier, K.; Kaplan, G. C.; Lilly, S.; Quinn, T.; Stroozas, B.; Tucker, T.

    1996-05-01

    NASA has accepted an unsolicited proposal by the Center for EUV Atrophysics (CEA) at the University of California at Berkeley to manage spacecraft operations for the Extreme Ultraviolet Explorer (EUVE) extended mission. The proposal can serve as a model for university, government, and industry collaborations to respond to NASA's stated strategic goal to outsource all routine operations of scientific satellites to academia and industry. CEA has taken a conservative, low-cost approach to outsourcing that continues observatory operations, maintains the science return, and preserves the EUVE science archive. The Outsourced Extended Mission reduces yearly EUVE program costs, which may allow for a further extension of the science mission. This poster discusses the outsourced EUVE mission, its operations concept, NASA institutional support, and the roles and responsibilities of the government, university, and industry.

  7. Silicon Lightweight Mirrors (SLMS) for Ultraviolet and Extreme Ultraviolet Imaging Mirrors

    NASA Technical Reports Server (NTRS)

    Goodman, W. A.; Keys, Andrew S. (Technical Monitor)

    2002-01-01

    Subtopic 01-S1.06 requires mirrors with a diameter of 0.5-2.4 meters, areal density less than 20 kg/sq m, a figure specification of 0.02-0.005 waves root mean square (rms) at 633 nanometers, a surface roughness 0.5-1 nanometers rms, and a midfrequency error of 1.0-2.5 nanometers rms for use in the infrared (IR) to extreme ultra violet (EUV) waveband. Schafer's Phase II objective is to use Silicon Lightweight Mirrors (SLMS), a novel, all-silicon, foam-core, lightweight mirror technology, to build three imaging mirrors for the Next Generation Space Telescope Near Infrared Camera (NIRCam) Engineering Test Unit: M0 (a flat), M2 (a concave sphere) and M3R (an oblate spheroid). The surface figure error specification for the NIRCam imaging mirrors is 8 nanometers rms (0.013 waves rms at 633 nanometers), equivalent to that required for ultraviolet (UV) and EUV mirrors, and this figure must be maintained at the 35 K operational temperature of NGST. The surface roughness required is 30 A rms since NIRCam operates in the visible to infrared (VIS/IR) (0.65-5 microns). We will produce mounts for mirrors M2 and M3R using the complementary thermally matched C/SiC material demonstrated by Schafer under another NASA SBIR, NAS8-98137.

  8. Development of ellipsoidal focusing mirror for soft x-ray and extreme ultraviolet light

    NASA Astrophysics Data System (ADS)

    Mimura, Hidekazu; Takei, Yoshinori; Saito, Takahiro; Kume, Takehiro; Motoyama, Hiroto; Egawa, Satoru; Takeo, Yoko; Higashi, Takahiro

    2015-08-01

    Mirrors are key devices for creating various systems in optics. Focusing X-ray and extreme ultraviolet (EUV) light requires mirror surfaces with an extremely high accuracy. The figure of an ellipsoidal mirror is obtained by rotating an elliptical profile, and using such a mirror, soft X-ray and EUV light can be focused to dimensions on the order of nanometers without chromatic aberration. Although the theoretical performance of ellipsoidal mirrors is extremely high, the fabrication of an ideal ellipsoidal mirror remains problematic. Based on this background, we have been working to develop a fabrication system for ellipsoidal mirrors. In this proceeding, we briefly introduce the fabrication process and the soft X-ray focusing performance of the ellipsoidal mirror fabricated using the proposed process.

  9. Extreme-ultraviolet lensless Fourier-transform holography.

    PubMed

    Lee, S H; Naulleau, P; Goldberg, K A; Cho, C H; Jeong, S; Bokor, J

    2001-06-01

    We demonstrate 100-nm-resolution holographic aerial image monitoring based on lensless Fourier-transform holography at extreme-UV (EUV) wavelengths, using synchrotron-based illumination. This method can be used to monitor the coherent imaging performance of EUV lithographic optical systems. The system has been implemented in the EUV phase-shifting point-diffraction interferometer recently developed at Lawrence Berkeley National Laboratory. Here we introduce the idea of the holographic aerial image-recording technique and present imaging performance characterization results for a 10x Schwarzschild objective, a prototype EUV lithographic optic. The results are compared with simulations, and good agreement is obtained. Various object patterns, including phase-shift-enhanced patterns, have been studied. Finally, the application of the holographic aerial image-recording technique to EUV multilayer mask-blank defect characterization is discussed. PMID:18357280

  10. Extreme ultraviolet explorer satellite observation of Jupiter's Io plasma torus

    NASA Technical Reports Server (NTRS)

    Hall, D. T; Gladstone, G. R.; Moos, H. W.; Bagenal, F.; Clarke, J. T.; Feldman, P. D.; Mcgrath, M. A.; Schneider, N. M.; Shemansky, D. E.; Strobel, D. F.

    1994-01-01

    We present the first Extreme Ultraviolet Explorer (EUVE) satellite observation of the Jupiter system, obtained during the 2 day period 1993 March 30 through April 1, which shows a rich emission-line spectrum from the Io plasma torus spanning wavelengths 370 to 735 A. The emission features correspond primarily to known multiplets of oxygen and sulfur ions, but a blended feature near 372 A is a plausible Na II transition. The summed detected energy flux of (7.2 +/- 0.2) x 10(exp -11) ergs/sq cm(s) corresponds to a radiated power of approximately equal to 4 x 10(exp 11) W in this spectral range. All ansa emissions show a distinct dawn-dusk brightness asymmetry and the measured dusk/dawn ratio of the bright S III lambda-680 feature is 2.3 +/- 0.3, significantly larger than the ratio measured by the Voyager spacecraft ultraviolet (UV) instruments. A preliminary estimate of ion partitioning indicates that the oxygen/sulfur ion ratio is approximately equal to 2, compared to the value approximately equal to 1.3 measured by Voyager, and that (Na(+))/(e) greater than 0.01.

  11. Extreme Ultraviolet Radiation Measurement for Planetary Atmospheres/Magnetospheres from the Earth-Orbiting Spacecraft (Extreme Ultraviolet Spectroscope for Exospheric Dynamics: EXCEED)

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Ichiro; Yoshioka, Kazuo; Murakami, Go; Yamazaki, Atsushi; Tsuchiya, Fuminori; Kagitani, Masato; Sakanoi, Takeshi; Terada, Naoki; Kimura, Tomoki; Kuwabara, Masaki; Fujiwara, Kuto; Hamaguchi, Tomoya; Tadokoro, Hiroyasu

    2014-11-01

    The Sprint-A satellite with the EUV spectrometer (Extreme Ultraviolet Spectroscope for Exospheric Dynamics: EXCEED) was launched in September 2013 by the Epsilon rocket. Now it is orbiting around the Earth (954.05 km×1156.87 km orbit; the period is 104 minutes) and one has started a broad and varied observation program. With an effective area of more than 1 cm2 and well-calibrated sensitivity in space, the EUV spectrometer will produce spectral images (520-1480 Å) of the atmospheres/magnetospheres of several planets (Mercury, Venus, Mars, Jupiter, and Saturn) from the Earth's orbit. At the first day of the observation, EUV emissions from the Io plasma torus (mainly sulfur ions) and aurora (H2 Lyman and Werner bands) of Jupiter have been identified. Continuous 3-month measurement for Io's plasma torus and aurora is planned to witness the sporadic and sudden brightening events occurring on one or both regions. For Venus, the Fourth Positive (A1 Π-X1 Σ +) system of CO and some yet known emissions of the atmosphere were identified even though the exposure was short (8-min). Long-term exposure from April to June (for approximately 2 months) will visualize the Venusian ionosphere and tail in the EUV spectral range. Saturn and Mars are the next targets.

  12. Effects of an axial magnetic field on Z-pinch plasmas for extreme ultraviolet sources

    SciTech Connect

    Katsuki, Sunao; Kimura, Akihiro; Kondo, Yoshihiro; Horita, Hiroyuki; Namihira, Takao; Sakugawa, Takashi; Akiyama, Hidenori

    2006-01-01

    This paper describes the effect of an axial magnetic field (B{sub z}) on plasma pinch dynamics and on the extreme ultraviolet (EUV) emission property of a compact Z-pinch device for EUV sources. The Z-pinch xenon plasma was driven by a pulse current with an amplitude of 27 kA and duration of 150 ns in an alumina tube with a diameter of 5 mm. A quasistatic magnetic field of up to 360 G is applied to the plasma. The EUV emission was evaluated for spectra, spatial distribution of the emission, and light energy at 13.5 nm with 2% bandwidth. A time-resolved interferogram provides the electron line density and pinch dynamics of the plasma. When a magnetic field of 160 G was applied to the plasma, the emission energy was approximately double that without the magnetic field. The spectroscopic measurement shows that the EUV spectrum drastically varies with magnetic-field strength. The time-resolved interferogram indicates that the axial magnetic field contributes by making the plasma compression smooth and by sustaining certain plasma conditions longer. From these experimental results, it was concluded that applying an axial magnetic field can be an effective method to improve EUV emission.

  13. Time dependent changes in extreme ultraviolet reflectivity of Ru mirrors from electron-induced surface chemistry

    NASA Astrophysics Data System (ADS)

    Kanjilal, A.; Catalfano, M.; Harilal, S. S.; Hassanein, A.; Rice, B.

    2012-03-01

    Time dependent changes in 13.5 nm extreme ultraviolet (EUV) reflectivity of Ru mirrors due to variations in surface composition were investigated. The surface properties of Ru films were analyzed in situ by means of X-ray photoelectron spectroscopy (XPS), and further verified by Auger electron spectroscopy (AES). Moreover, the impact on EUV reflectivity (EUVR) with time was examined in situ via continuous and/or discrete EUV exposures. The rapid decrease in EUVR was observed in the presence of photoelectrons (PEs) from Ru mirror of the EUV setup, whereas no significant variation was recorded by screening out additional PEs. Detailed XPS and AES analyses suggest that carbon deposition via dissociation of residual hydrocarbons plays a dominant role in the presence of additional PEs, and thus reduces the reflectivity rapidly. Using EUV photoelectron spectroscopy, systematic reduction of the secondary electron yield from the Ru mirror surface was observed in consecutive scans, and therefore supports the formation of carbonaceous Ru surface in the presence of additional PEs.

  14. Laser-assisted vacuum arc extreme ultraviolet source: a comparison of picosecond and nanosecond laser triggering

    NASA Astrophysics Data System (ADS)

    Beyene, Girum A.; Tobin, Isaac; Juschkin, Larissa; Hayden, Patrick; O’Sullivan, Gerry; Sokell, Emma; Zakharov, Vassily S.; Zakharov, Sergey V.; O’Reilly, Fergal

    2016-06-01

    Extreme ultraviolet (EUV) light generation by hybrid laser-assisted vacuum arc discharge plasmas, utilizing Sn-coated rotating-disc-electrodes, was investigated. The discharge was initiated by localized ablation of the liquid tin coating of the cathode disc by a laser pulse. The laser pulse, at 1064 nm, was generated by Nd:YAG lasers with variable energy from 1 to 100 mJ per pulse. The impact of shortening the laser pulse from 7 ns to 170 ps on the EUV generation has been investigated in detail. The use of ps pulses resulted in an increase in emission of EUV radiation. With a fixed discharge energy of ~4 J, the EUV conversion efficiency tends to plateau at ~2.4  ±  0.25% for the ps laser pulses, while for the ns pulses, it saturates at ~1.7  ±  0.3%. Under similar discharge and laser energy conditions, operating the EUV source with the ps-triggering resulted also in narrower spectral profiles of the emission in comparison to ns-triggering. The results indicate an advantage in using ps-triggering in laser-assisted discharges to produce brighter plasmas required for applications such as metrology.

  15. Plasma physics and radiation hydrodynamics in developing an extreme ultraviolet light source for lithography

    SciTech Connect

    Nishihara, Katsunobu; Nunami, Masanori; Fujioka, Shinsuke; Furukawa, Hiroyuki; Murakami, Masakatsu; Zhakhovskii, Vasilii; Gamata, Kouhei; Takata, Akira; Ueda, Hirofumi; Nishimura, Hiroaki; Izawa, Yasukazu; Miyanaga, Noriaki; Mima, Kunoki; Sunahara, Atsushi; Shimada, Yoshinori; Sasaki, Akira; Tanuma, Hajime; Fujima, Kazumi; Kato, Takako; More, Richard

    2008-05-15

    Extreme ultraviolet (EUV) radiation from laser-produced plasma (LPP) has been thoroughly studied for application in mass production of next-generation semiconductor devices. One critical issue for the realization of an LPP-EUV light source for lithography is the conversion efficiency (CE) from incident laser power to EUV radiation of 13.5-nm wavelength (within 2% bandwidth). Another issue is solving the problem of damage caused when debris reaches an EUV collecting mirror. Here, we present an improved power balance model, which can be used for the optimization of laser and target conditions to obtain high CE. An integrated numerical simulation code has been developed for the target design. The code agrees well with experimental results not only for CE but also for detailed EUV spectral structure. We propose a two-pulse irradiation scheme for high CE, and reduced ion debris using a carbon dioxide laser and a droplet or a punch-out target. Using our benchmarked numerical simulation code, we find a possibility to obtain CE up to 6-7%, which is more than twice that achieved to date. We discuss the reduction of ion energy within the two-pulse irradiation scheme. The mitigation of energetic ions by a magnetic field is also discussed, and we conclude that no serious instability occurs due to large ion gyroradius.

  16. Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources

    NASA Astrophysics Data System (ADS)

    Danylyuk, Serhiy; Loosen, Peter; Bergmann, Klaus; Kim, Hyun-su; Juschkin, Larissa

    2013-07-01

    Lithography has been faced with a challenge to bring resolution down to the 10-nm level. One of the promising approaches for such ultra-high-resolution printing is self-imaging Talbot lithography with extreme ultraviolet (EUV) radiation. However, as the size of structures on the mask approaches the wavelength of the radiation, diffraction influence needs to be evaluated precisely to estimate the achievable resolution and quality of the patterns. Here, the results of finite-difference time-domain simulations of the diffraction on EUV transmission masks in dependence to the period (pitch) of the mask are presented with the aim to determine the resolution that can be realistically achieved with the EUV Talbot lithography. The modeled experimental setup is utilizing partially coherent EUV radiation with the wavelength of 10.9 nm from Xe/Ar discharge plasma EUV source and Ni/Nb-based amplitude transmission mask. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5-nm half-pitch with 2∶1 mask demagnification utilizing achromatic Talbot effect and transverse electric (TE)-polarized light.

  17. Diagnosis of energy transport in iron buried layer targets using an extreme ultraviolet laser

    SciTech Connect

    Shahzad, M.; Culfa, O.; Rossall, A. K.; Tallents, G. J.; Wilson, L. A.; Guilbaud, O.; Kazamias, S.; Delmas, O.; Demailly, J.; Maitrallain, A.; Pittman, M.; Baynard, E.; Farjardo, M.

    2015-02-15

    We demonstrate the use of extreme ultra-violet (EUV) laboratory lasers in probing energy transport in laser irradiated solid targets. EUV transmission through targets containing a thin layer of iron (50 nm) encased in plastic (CH) after irradiation by a short pulse (35 fs) laser focussed to irradiances 3 × 10{sup 16} Wcm{sup −2} is measured. Heating of the iron layer gives rise to a rapid decrease in EUV opacity and an increase in the transmission of the 13.9 nm laser radiation as the iron ionizes to Fe{sup 5+} and above where the ion ionisation energy is greater than the EUV probe photon energy (89 eV). A one dimensional hydrodynamic fluid code HYADES has been used to simulate the temporal variation in EUV transmission (wavelength 13.9 nm) using IMP opacity values for the iron layer and the simulated transmissions are compared to measured transmission values. When a deliberate pre-pulse is used to preform an expanding plastic plasma, it is found that radiation is important in the heating of the iron layer while for pre-pulse free irradiation, radiation transport is not significant.

  18. Calibration of the San Marco airglow-solar spectrometer instrument in the extreme ultraviolet

    NASA Astrophysics Data System (ADS)

    Worden, John; Woods, Thomas N.; Rottman, Gary J.; Schmidtke, Gerhard; Tai, Hongsheng; Doll, Harry G.; Solomon, Stanley C.

    1996-02-01

    The San Marco 5 carried the airglow-solar spectrometer instrument (ASSI). This 18-channel spectrometer measured the solar and terrestrial radiation in the wavelength region between 20 and 700 nm for 9 months in 1988. The ASSI extreme ultraviolet (EUV) channels showed significant sensitivity changes during the mission. The sensitivity changes of the EUV channels are quantified by comparing ASSI solar EUV irradiance measurements to the solar EUV irradiance derived from a solar proxy model. A sensitivity change model is developed that shows that exponential curves can adequately describe the sensitivity changes of the ASSI optics and detectors. The November 10 calibration parameters and the sensitivity change model can be used to derive the EUV terrestrial airglow brightness for the time period of the ASSI mission. Analysis of the solar Lyman-(alpha) irradiance measured by the ASSI, the solar mesospheric explorer (SME), and the upper atmosphere research satellite has led to a revised Lyman-(alpha) irradiance for the San Marco mission. For example, the ASSI November 10, 1988, Lyman-(alpha) measurement is 5.3 X 1011 photons cm-2 s-1 versus the reported SME measurement of 3.35 X 1011 photons cm-2 s-1.

  19. The composition and structure of white dwarf atmospheres revealed by extreme ultraviolet spectroscopy

    NASA Technical Reports Server (NTRS)

    Barstow, Martin A.; Hubeny, Ivan; Lanz, Thierry; Holberg, Jay B.; Sion, Edward M.

    1995-01-01

    The ROentgen SATellite (ROSAT) and Extreme UltraViolet Explorer (EUVE) all-sky surveys have resulted in an important change in our understanding of the general composition of hydrogen-rich DA white dwarf atmospheres, with the photospheric opacity dominated by heavy elements rather than helium in the hottest stars (T > 40, 000 K). Most stars cooler than 40,000 K have more or less pure H atmospheres. However, one question, which has not been resolved, concerned the specific nature of the heavy elements and the role of helium in the hottest white dwarfs. One view of white dwarf evolution requires that H-rich DA stars form by gravitational settling of He from either DAO or He-rich central stars of planetary nebulae. In this case, the youngest (hottest) DA white dwarfs may still contain visible traces of He. Spectroscopic observations now available with EUVE provide a crucial test of these ideas. Analysis of data from the EUVE Guest Observer programme and EUVE public archive allows quantitative consideration of the sources of EUV opacity and places limits on the abundance of He which may be present.

  20. Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

    NASA Astrophysics Data System (ADS)

    Iguchi, Haruki; Hashimoto, Hiraku; Kuki, Masaki; Harada, Tetsuo; Kinoshita, Hiroo; Watanabe, Takeo; Platonov, Yuriy Y.; Kriese, Michael D.; Rodriguez, Jim R.

    2016-06-01

    In extreme-ultraviolet (EUV) lithography, the development of high-power EUV sources is one of the critical issues. The EUV output power directly depends on the collector mirror performance. Furthermore, mirrors with large diameters are necessary to achieve high collecting performance and take sufficient distance to prevent heat and debris from a radiation point of the source. Thus collector mirror development with accurate reflectometer is important. We have developed a large reflectometer at BL-10 beamline of the NewSUBARU synchrotron facility that can be used for mirrors with diameters, thicknesses, and weights of up to 800 mm, 250 mm, and 50 kg, respectively. This reflectometer can measure reflectivity with fully s-polarized EUV light. In this study, we measured the reflectance of a 412-mm-diameter EUV collector mirror using a maximum incident angle of 36°. We obtained the peak reflectance, center wavelength and reflection bandwidth results and compared our results with Physikalisch-Technische Bundesanstalt results.

  1. Effects of the dynamics of droplet-based laser-produced plasma on angular extreme ultraviolet emission profile

    SciTech Connect

    Giovannini, Andrea Z.; Abhari, Reza S.

    2014-05-12

    The emission distribution of extreme ultraviolet (EUV) radiation from droplet targets is dependent on the dynamics of the laser-produced plasma. The EUV emission is measured on a 2% bandwidth centered at 13.5 nm (in-band). The targets of the laser are small (sub-50 μm) tin droplets, and the in-band emission distribution is measured for different laser irradiances and droplet sizes at various angular positions. Larger droplets lead to a faster decay of EUV emission at larger angles with respect to the laser axis. A decrease in laser irradiance has the opposite effect. The measurements are used together with an analytical model to estimate plume dynamics. Additionally, the model is used to estimate EUV emission distribution for a desired droplet diameter and laser irradiance.

  2. Extreme Ultraviolet Explorer attitude determination support with a multimission three-axis stabilized spacecraft flight dynamics support system

    NASA Astrophysics Data System (ADS)

    Harman, Richard; Lee, Michael

    The Extreme Ultraviolet Explorer (EUVE) was launched June 7, 1992 by an expendable Delta 2 launch vehicle. The Flight Dynamics Facility (FDF) at NASA Goddard Space Flight Center used a multimission three-axis stabilized spacecraft (MTASS) Flight Dynamics Support System (FDSS) to support the EUVE launch and mission operations. For EUVE, MTASS has been used to monitor attitude sensor performance, study OBC attitude determination performance, and study attitude perturbations. The current status of these efforts are summarized. After its successful implementation for EUVE, the Upper Atmosphere Research Satellite (UARS), and the Solar Anomalous and Magnetospheric Particle Explorer (SAMPEX), MTASS has demonstrated multimission flight dynamics support systems can effectively bridge the gap between single-mission support systems of the past and future generic systems.

  3. Materials Properties and Solvated Electron Dynamics of Isolated Nanoparticles and Nanodroplets Probed with Ultrafast Extreme Ultraviolet Beams.

    PubMed

    Ellis, Jennifer L; Hickstein, Daniel D; Xiong, Wei; Dollar, Franklin; Palm, Brett B; Keister, K Ellen; Dorney, Kevin M; Ding, Chengyuan; Fan, Tingting; Wilker, Molly B; Schnitzenbaumer, Kyle J; Dukovic, Gordana; Jimenez, Jose L; Kapteyn, Henry C; Murnane, Margaret M

    2016-02-18

    We present ultrafast photoemission measurements of isolated nanoparticles in vacuum using extreme ultraviolet (EUV) light produced through high harmonic generation. Surface-selective static EUV photoemission measurements were performed on nanoparticles with a wide array of compositions, ranging from ionic crystals to nanodroplets of organic material. We find that the total photoelectron yield varies greatly with nanoparticle composition and provides insight into material properties such as the electron mean free path and effective mass. Additionally, we conduct time-resolved photoelectron yield measurements of isolated oleylamine nanodroplets, observing that EUV photons can create solvated electrons in liquid nanodroplets. Using photoemission from a time-delayed 790 nm pulse, we observe that a solvated electron is produced in an excited state and subsequently relaxes to its ground state with a lifetime of 151 ± 31 fs. This work demonstrates that femotosecond EUV photoemission is a versatile surface-sensitive probe of the properties and ultrafast dynamics of isolated nanoparticles. PMID:26807653

  4. A solar type II radio burst from coronal mass ejection-coronal ray interaction: Simultaneous radio and extreme ultraviolet imaging

    SciTech Connect

    Chen, Yao; Du, Guohui; Feng, Shiwei; Kong, Xiangliang; Wang, Bing; Feng, Li; Guo, Fan; Li, Gang

    2014-05-20

    Simultaneous radio and extreme ultraviolet (EUV)/white-light imaging data are examined for a solar type II radio burst occurring on 2010 March 18 to deduce its source location. Using a bow-shock model, we reconstruct the three-dimensional EUV wave front (presumably the type-II-emitting shock) based on the imaging data of the two Solar TErrestrial RElations Observatory spacecraft. It is then combined with the Nançay radio imaging data to infer the three-dimensional position of the type II source. It is found that the type II source coincides with the interface between the coronal mass ejection (CME) EUV wave front and a nearby coronal ray structure, providing evidence that the type II emission is physically related to the CME-ray interaction. This result, consistent with those of previous studies, is based on simultaneous radio and EUV imaging data for the first time.

  5. Design and fabrication of advanced EUV diffractive elements

    SciTech Connect

    Naulleau, Patrick P.; Liddle, J. Alexander; Salmassi, Farhad; Anderson, Erik H.; Gullikson, Eric M.

    2003-11-16

    As extreme ultraviolet (EUV) lithography approaches commercial reality, the development of EUV-compatible diffractive structures becomes increasingly important. Such devices are relevant to many aspects of EUV technology including interferometry, illumination, and spectral filtering. Moreover, the current scarcity of high power EUV sources makes the optical efficiency of these diffractive structures a paramount concern. This fact has led to a strong interest in phase-enhanced diffractive structures. Here we describe recent advancements made in the fabrication of such devices.

  6. Geocentric position preliminary detection from the extreme ultraviolet images of Chang'E-3

    NASA Astrophysics Data System (ADS)

    Zheng, Chen; Ping, Jinsong; Wang, Mingyuan; Li, Wenxiao

    2015-08-01

    An Extreme ultraviolet (EUV) Camera was installed onboard the Chinese lunar surface landing mission, the Chang'E-3 lander, as a useful method to observe the Earth plasmasphere. This EUV optical payload obtained more than 600 moon-based Earth plasmasphere images since December 14, 2013. However, due to errors of unknown size and origin in the platform attitude control of the lander and in the EUV telescope pointing control during the mission operating periods, the geocentric coordinates in these EUV images are not fixed in the same position of CCD pixel. Before adequately calibrating, these positioning offsets will introduce extra errors into the analysis of the plasmaspheric structure. With only a little insufficient telemetry information, an effective calibrating method of circle-based differential algorithm is suggested and demonstrated, for automatically and precisely detecting the geocentric position in each EUV image of Chang'E-3 mission. In each EUV image, the tested method uses the outline of a circle as the basic unit to capture the contour for the bright region based on the spectral characteristic. Then, the center of the extracted circle is adopted as the geocentric position for the image. The preliminary analysis shows that this method can effectively detect the geocentric position being always consistent with the recognition result by the basic hand labor method. It is found that the radius of the circles varies from month to month from December, 2013 to May, 2014. The monthly averages of radius show relative notable positive correlation and negative correlation with the changes of both Zenith angle of the Earth at the landing area of Chang'E-3 lander, and the Earth-moon distance, respectively. This method and results here will benefit the Chang'E-3 EUV study.

  7. The extreme ultraviolet spectra of low-redshift radio-loud quasars

    NASA Astrophysics Data System (ADS)

    Punsly, Brian; Reynolds, Cormac; Marziani, Paola; O'Dea, Christopher P.

    2016-07-01

    This paper reports on the extreme ultraviolet (EUV) spectrum of three low-redshift (z ˜ 0.6) radio-loud quasars, 3C 95, 3C 57 and PKS 0405-123. The spectra were obtained with the Cosmic Origins Spectrograph of the Hubble Space Telescope. The bolometric thermal emission, Lbol, associated with the accretion flow is a large fraction of the Eddington limit for all of these sources. We estimate the long-term time-averaged jet power, overline{Q}, for the three sources. overline{Q}/L_{bol}, is shown to lie along the correlation of overline{Q}/L_{bol}, and αEUV found in previous studies of the EUV continuum of intermediate and high-redshift quasars, where the EUV continuum flux density between 1100 and 700 Å is defined by F_{ν } ˜ ν ^{-α _{EUV}}. The high Eddington ratios of the three quasars extend the analysis into a wider parameter space. Selecting quasars with high Eddington ratios has accentuated the statistical significance of the partial correlation analysis of the data. Namely, the correlation of overline{Q}/L_{bol} and αEUV is fundamental, and the correlation of overline{Q} and αEUV is spurious at a very high statistical significance level (99.8 per cent). This supports the regulating role of ram pressure of the accretion flow in magnetically arrested accretion models of jet production. In the process of this study, we use multifrequency and multiresolution Very Large Array radio observations to determine that one of the bipolar jets in 3C 57 is likely frustrated by galactic gas that keeps the jet from propagating outside the host galaxy.

  8. EUV spectroscopy of 3 RSCVn binaries

    NASA Technical Reports Server (NTRS)

    Dupree, A. K.; Brickhouse, Nancy S.; Hanson, G. J.

    1995-01-01

    The extreme ultraviolet (EUV) spectroscopy of several binary stars containing cool components is used to define the high temperature plasma structure of these stars and their stellar atmospheres. Different line emission spectra are reported, along with a spectrum analysis of Capella, a nearby bright multiple star system, using data from the EUVE satellite.

  9. Angle-resolved scattering and reflectance of extreme-ultraviolet multilayer coatings: measurement and analysis

    SciTech Connect

    Schroeder, Sven; Herffurth, Tobias; Trost, Marcus; Duparre, Angela

    2010-03-20

    Roughness-induced light scattering critically affects the performance of optical components, in particular at short wavelengths. We present a stand-alone instrument for angle-resolved scattering and reflectance measurements at 13.5 nm in the extreme-ultraviolet (EUV) spectral range. The achieved dynamic range allows even the scattering of high-quality EUV mirrors on extremely smooth substrates to be investigated. For Mo/Si multilayers, total scatter losses of several percent have been observed, depending on the substrate qualities as well as on roughening and smoothing effects during coating. Different approximate models for estimating the impact of roughness on scatter losses are discussed and compared with experimental results.

  10. Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations

    SciTech Connect

    Naulleau, Patrick; George, Simi

    2011-01-26

    In the case of extreme ultraviolet (EUV) lithography, modeling has shown that reflector phase roughness on the lithographic mask is a significant concern due to the image plan speckle it causes and the resulting line-edge roughness on imaged features. Modeling results have recently been used to determine the requirements for future production worthy masks yielding the extremely stringent specification of 50 pm rms roughness. Owing to the scale of the problem in terms of memory requirements, past modeling results have all been based on the thin mask approximation. EUV masks, however, are inherently three dimensional in nature and thus the question arises as to the validity of the thin mask approximation. Here we directly compare image plane speckle calculation results using the fast two dimensional thin mask model to rigorous finite-difference time-domain results and find the two methods to be comparable.

  11. Solar extreme ultraviolet sensor and advanced langmuir probe

    NASA Technical Reports Server (NTRS)

    Voronka, N. R.; Block, B. P.; Carignan, G. R.

    1992-01-01

    For more than two decades, the staff of the Space Physics Research Laboratory (SPRL) has collaborated with the Goddard Space Flight Center (GSFC) in the design and implementation of Langmuir probes (LP). This program of probe development under the direction of Larry Brace of GSFC has evolved methodically with innovations to: improve measurement precision, increase the speed of measurement, and reduce the weight, size, power consumption and data rate of the instrument. Under contract NAG5-419 these improvements were implemented and are what characterize the Advanced Langmuir Probe (ALP). Using data from the Langmuir Probe on the Pioneer Venus Orbiter, Brace and Walter Hoegy of GSFC demonstrated a novel method of monitoring the solar extreme ultraviolet (EUV) flux. This led to the idea of developing a sensor similar to a Langmuir probe specifically designed to measure solar EUV (SEUV) that uses a similar electronics package. Under this contract, a combined instrument package of the ALP and SEUV sensor was to be designed, constructed, and laboratory tested. Finally the instrument was to be flight tested as part of sounding rocket experiment to acquire the necessary data to validate this method for possible use in future earth and planetary aeronomy missions. The primary purpose of this contract was to develop the electronics hardware and software for this instrument, since the actual sensors were suppied by GSFC. Due to budget constraints, only a flight model was constructed. These electronics were tested and calibrated in the laboratory, and then the instrument was integrated into the rocket payload at Wallops Flight Facility where it underwent environmental testing. After instrument recalibration at SPRL, the payload was reintegrated and launched from the Poker Flat Research Range near Fairbanks Alaska. The payload was successfully recovered and after refurbishment underwent further testing and developing to improve its performance for future use.

  12. Four wave mixing experiments with extreme ultraviolet transient gratings

    PubMed Central

    Bencivenga, F.; Cucini, R.; Capotondi, F.; Battistoni, A.; Mincigrucci, R.; Giangrisostomi, E.; Gessini, A.; Manfredda, M.; Nikolov, I. P.; Pedersoli, E.; Principi, E.; Svetina, C.; Parisse, P.; Casolari, F.; Danailov, M. B.; Kiskinova, M.; Masciovecchio, C.

    2015-01-01

    Four wave mixing (FWM) processes, based on third-order non-linear light-matter interactions, can combine ultrafast time resolution with energy and wavevector selectivity, and enables to explore dynamics inaccessible by linear methods.1-7 The coherent and multi-wave nature of FWM approach has been crucial in the development of cutting edge technologies, such as silicon photonics,8 sub-wavelength imaging9 and quantum communications.10 All these technologies operate with optical wavelengths, which limit the spatial resolution and do not allow probing excitations with energy in the eV range. The extension to shorter wavelengths, that is the extreme ultraviolet (EUV) and soft-x-ray (SXR) range, will allow to improve the spatial resolution and to expand the excitation energy range, as well as to achieve elemental selectivity by exploiting core resonances.5-7,11-14 So far FWM applications at these wavelengths have been prevented by the absence of coherent sources of sufficient brightness and suitable experimental setups. Our results show how transient gratings, generated by the interference of coherent EUV pulses delivered by the FERMI free electron laser (FEL),15 can be used to stimulate FWM processes at sub-optical wavelengths. Furthermore, we have demonstrated the possibility to read the time evolution of the FWM signal, which embodies the dynamics of coherent excitations as molecular vibrations. This result opens the perspective for FWM with nanometer spatial resolution and elemental selectivity, which, for example, would enable the investigation of charge-transfer dynamics.5-7 The theoretical possibility to realize these applications have already stimulated dedicated and ongoing FEL developments;16-20 today our results show that FWM at sub-optical wavelengths is feasible and would be the spark to the further advancements of the present and new sources. PMID:25855456

  13. Extreme Ultraviolet Emission Lines of Iron Fe XI-XIII

    NASA Astrophysics Data System (ADS)

    Lepson, Jaan; Beiersdorfer, P.; Brown, G. V.; Liedahl, D. A.; Brickhouse, N. S.; Dupree, A. K.

    2013-04-01

    The extreme ultraviolet (EUV) spectral region (ca. 20--300 Å) is rich in emission lines from low- to mid-Z ions, particularly from the middle charge states of iron. Many of these emission lines are important diagnostics for astrophysical plasmas, providing information on properties such as elemental abundance, temperature, density, and even magnetic field strength. In recent years, strides have been made to understand the complexity of the atomic levels of the ions that emit the lines that contribute to the richness of the EUV region. Laboratory measurements have been made to verify and benchmark the lines. Here, we present laboratory measurements of Fe XI, Fe XII, and Fe XIII between 40-140 Å. The measurements were made at the Lawrence Livermore electron beam ion trap (EBIT) facility, which has been optimized for laboratory astrophysics, and which allows us to select specific charge states of iron to help line identification. We also present new calculations by the Hebrew University - Lawrence Livermore Atomic Code (HULLAC), which we also utilized for line identification. We found that HULLAC does a creditable job of reproducing the forest of lines we observed in the EBIT spectra, although line positions are in need of adjustment, and line intensities often differed from those observed. We identify or confirm a number of new lines for these charge states. This work was supported by the NASA Solar and Heliospheric Program under Contract NNH10AN31I and the DOE General Plasma Science program. Work was performed in part under the auspices of the Department of Energy by Lawrence Livermore National Laboratory under Contract DEAC52-07NA27344.

  14. Extreme ultraviolet lithography mask etch study and overview

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay; Chandrachood, Madhavi; Sabharwal, Amitabh

    2013-04-01

    An overview of extreme ultraviolet lithography (EUVL) mask etch is presented and a EUVL mask etch study was carried out. Today, EUVL implementation has three critical challenges that hinder its adoption: extreme ultraviolet (EUV) source power, resist resolution-line width roughness-sensitivity, and a qualified EUVL mask. The EUVL mask defect challenges result from defects generated during blank preparation, absorber and multilayer deposition processes, as well as patterning, etching and wet clean processes. Stringent control on several performance criteria including critical dimension (CD) uniformity, etch bias, micro-loading, profile control, defect control, and high etch selectivity requirement to capping layer is required during the resist pattern duplication on the underlying absorber layer. EUVL mask absorbers comprise of mainly tantalum-based materials rather than chrome- or MoSi-based materials used in standard optical masks. Compared to the conventional chrome-based absorbers and phase shift materials, tantalum-based absorbers need high ion energy to obtain moderate etch rates. However, high ion energy may lower resist selectivity, and could introduce defects. Current EUVL mask consists of an anti-reflective layer on top of the bulk absorber. Recent studies indicate that a native oxide layer would suffice as an anti-reflective coating layer during the electron beam inspection. The absorber thickness and the material properties are optimized based on optical density targets for the mask as well as electromagnetic field effects and optics requirements of the patterning tools. EUVL mask etch processes are modified according to the structure of the absorber, its material, and thickness. However, etch product volatility is the fundamental requirement. Overlapping lithographic exposure near chip border may require etching through the multilayer, resulting in challenges in profile control and etch selectivity. Optical proximity correction is applied to further

  15. Low-defect reflective mask blanks for extreme ultraviolet lithography

    SciTech Connect

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Walton, C; Ray-Chaudhuri, A

    1999-03-11

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA roadmap well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm² @ 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm² for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm² in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10-2/cm² level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling.

  16. Low-debris efficient laser-produced plasma extreme ultraviolet source by use of a regenerative liquid microtarget containing tin nanoparticles

    NASA Astrophysics Data System (ADS)

    Higashiguchi, Takeshi; Dojyo, Naoto; Senba, Yusuke; Suetake, Sumihiro; Katto, Masahito; Kubodera, Shoichi

    2007-05-01

    We demonstrated a debris-free, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO II) nano-particles. By using a low SnO II concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.

  17. Enhancement of conversion efficiency of extreme ultraviolet radiation from a liquid aqueous solution microjet target by use of dual laser pulses

    NASA Astrophysics Data System (ADS)

    Higashiguchi, Takeshi; Dojyo, Naoto; Hamada, Masaya; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi

    2006-03-01

    We demonstrated a debris-free, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO II) nano-particles. By using a low SnO II concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.

  18. Lifetime studies of Mo/Si and Mo/Be multilayer coatings for extreme ultraviolet lithography

    SciTech Connect

    Bajt, S; Clift, W M; Folta, J A; Gullikson, E M; Klebanoff, L E; Kleineberg, U; Malinowski, M E; Wedowski, M

    1999-08-05

    Extreme Ultraviolet Lithography (EUVL) is a candidate for future application by the semiconductor industry in the production of sub-100 nm feature sizes in integrated circuits. Using multilayer reflective coatings optimized at wavelengths ranging from 11 to 14 nm, EUVL represents a potential successor to currently existing optical lithography techniques. In order to assess lifetimes of the multilayer coatings under realistic conditions, a series of radiation stability tests has been performed. In each run a dose of EUV radiation equivalent to several months of lithographic operation was applied to Mo/Si and MO/Be multilayer coatings within a few days. Depending on the residual gas concentration in the vacuum environment, surface deposition of carbon during the exposure lead to losses in the multilayer reflectivity. However, in none of the experimental runs was structural damage within the bulk of the multilayers observed. Mo/Si multilayer coatings recovered their full original reflectivity after removal of the carbon layer by an ozone cleaning method. Auger depth profiling on MO/Be multilayers indicate that carbon penetrated into the Be top layer during illumination with high doses of EUV radiation. Subsequent ozone cleaning fully removed the carbon, but revealed enhanced oxidation of the area illuminated, which led to an irreversible loss in reflectance on the order of 1%. Keywords: Extreme ultraviolet (EUV) lithography, multilayer reflective coatings, radiation stability, surface contamination

  19. Electron roles in extreme ultraviolet lithography mirror contamination and flashover

    NASA Astrophysics Data System (ADS)

    Catalfano, Mark

    The purpose of this study was to characterize and study the contamination behavior of residual hydrocarbons and water vapor in a vacuum environment similar to that suited to the performance of EUV Lithography devices. A 50nm ruthenium film deposited on a silicon surface which served to simulate the Ru coated mirrors in a typical lithography setup was bombarded with 13.5 nm wavelength light at a grazing angle. We then studied in real-time the contamination effect by using extreme ultraviolet photoelectron spectroscopy (EUPS). This allowed us to examine the behavior of the contaminants as they formed dipoles. By monitoring X-Ray Photoelectron Spectroscopy (XPS) as a function of angle, we determined that carbon species may be more prevalent in the normal directions, while water and related species tend to be at grazing angles. While characterizing the contamination is certainly important for finding ways of mitigating it, we also attempted to prove that the electrons from a typical EUV source are just as important in terms of causing contamination if not more so than the light itself. By monitoring the contamination with both AES and XPS together, we were able to prove that in the absence of electrons the carbon buildup was far reduced. Similar results were found while studying the grazing angle reflectivity of the ruthenium sample. Electrons also proved to be important in surface flashover, a phenomenon in which the polarity on the surface can suddenly switch from negative to positive over a course of seconds. We saw this effect on gold and examined it in real-time with the help of secondary electron spectroscopy (SES). The flashover effect seemed to be defect driven. Interestingly, there was a dependence on energy change: when changing electrons from a lower to higher energy a flashover was observed, but not while changing from a high to a low energy. While we observed this on gold, silicon, and carbon it could certainly be extended to occurring on the photoresist

  20. Instrumentation development for the EUVE. [Extreme Ultraviolet Explorer Satellite

    NASA Technical Reports Server (NTRS)

    Finley, D.

    1980-01-01

    The prototype mirror was successfully replated with a thick layer of nickel and diamond turned again. Optimization of the sensitivity of the instruments was studied with emphasis on the filter material, and on the available telemetry. The JHU Preliminary Project Definition Document was critically analyzed. Further studies of the electron cloud distribution produced by a channel plate were performed, and a wedge and strip anode with 17 quartets per inch was shown to image with better than 0.5% linearity. Half the microchannel plates being used in the lifetest completed initial processing and are in the lifetest vacuum chamber.

  1. Experimental limits of the extreme ultraviolet background

    NASA Technical Reports Server (NTRS)

    Wulf-Mathies, C.; Grewing, M.; Kraemer, G.; Schulz-Luepertz, E.; Kimble, R.; Bixler, J.; Bowyer, S.

    1983-01-01

    Photometric observations of the diffuse extreme ultraviolet background with two photometers having bandpasses of 750-940 A and 1040-1080 A are reported. The payload, which was flown aboard an ARIES sounding rocket in June 1982, is described, including the electron detectors, filters, and calibration. The operation of the probe during the experiment, including its motions, are described. The primary experiment involved spectroscopic observation of the hot white dwarf HZ43. The photometer count rate is shown and the measurements of the diffuse background are compared with theoretical predictions. Despite the lower limits obtained using a narrowband detector, the measurements are not sensitive enough to draw any relevant astrophysical conclusions.

  2. Reflectance measurements and optical constants in the extreme ultraviolet of thin films of ion-beam-deposited carbon

    NASA Astrophysics Data System (ADS)

    Larruquert, Juan I.; Keski-Kuha, Ritva A. M.

    2000-09-01

    Reflectance measurements of ion-beam-deposited (IBD) C films were performed in the extreme ultraviolet (EUV) spectral region from 49 to 200 nm. Near normal incidence reflectance of IBD C films was determined to be higher than that of evaporated C films but lower than that of diamond. Optical constants of IBD C films were obtained from reflectance measurements as a function of the angle of incidence in the spectral range 49.0-121.6 nm. The relatively high reflectance of IBD C films in the spectral region 49-92 nm and its stability when stored in a desiccator make it an interesting coating material for the EUV.

  3. Broadband extreme ultraviolet multilayer mirror for supercontinuum light at a photon energy of 35-65 eV

    SciTech Connect

    Hatayama, Masatoshi; Takenaka, Hisataka; Gullikson, Eric M.; Suda, Akira; Midorikawa, Katsumi

    2009-10-10

    We have developed a broadband multilayer mirror for photon energies between 35 and 65 eV. This extreme ultraviolet (EUV) mirror has an almost flat reflectivity profile at normal incidence, and the average reflectivity is 8%. The bandwidth of this mirror is 30 eV centered around 50 eV, 1.5 times broader than conventional multilayer mirrors in this energy region. This new mirror can be used in a variety of applications using supercontinuum EUV light sources including attosecond metrology.

  4. EUV Resists: Illuminating the challenges

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher; George, Simi

    2011-06-01

    As extreme ultraviolet (EUV) lithography enters the commercialization phase with potential introduction at the 3x nm half-pitch node in 2013, the attention of advanced EUV resist research has turned to addressing patterning at 16-nm half pitch and below. Whereas line-edge roughness is the primary concern at 2x half pitch and larger, research at the 16-nm half pitch level is uncovering broader.

  5. Smoothing of Diamond-Turned Substrates for Extreme Ultraviolet Illuminators

    SciTech Connect

    Soufli, R; Spiller, E; Schmidt, M A; Robinson, J C; Baker, S L; Ratti, S; Johnson, M A; Gullikson, E M

    2003-11-13

    Condenser optics in extreme ultraviolet lithography (EUVL) systems are subjected to frequent replacement as they are positioned close to the illumination source, where increased heating and contamination occur. In the case of aspherical condenser elements made by optical figuring/finishing, their replacement can be very expensive (several hundred thousand dollars). One approach to this problem would be to manufacture inexpensive illuminator optics that meet all required specifications and could be replaced at no substantial cost. Diamond-turned metal substrates are a factor of 100 less expensive than conventional aspherical substrates but have insufficient finish, leading to unacceptably low EUV reflectance after multilayer coating. In this work it is shown that, by applying a smoothing film prior to multilayer coating, the high spatial frequency roughness of a diamond-turned metal substrate is reduced from 1.76 to 0.27 nm rms while the figure slope error is maintained at acceptable levels. Metrology tests performed at various stages of the fabrication of the element demonstrated that it satisfied all critical figure and finish specifications as illuminator. Initial experimental results on the stability and performance of the optic under a real EUVL plasma source environment show no accelerated degradation when compared to conventional substrates.

  6. Organometallic carboxylate resists for extreme ultraviolet with high sensitivity

    NASA Astrophysics Data System (ADS)

    Passarelli, James; Murphy, Michael; Re, Ryan Del; Sortland, Miriam; Hotalen, Jodi; Dousharm, Levi; Fallica, Roberto; Ekinci, Yasin; Neisser, Mark; Freedman, Daniel A.; Brainard, Robert L.

    2015-10-01

    We have developed organometallic carboxylate compounds [RnM)] capable of acting as negative-tone extreme ultraviolet (EUV) resists. The most sensitive of these resists contain antimony, three R-groups and two carboxylate groups, and carboxylate groups with polymerizable olefins (e.g., acrylate, methacrylate, or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization of olefins in the exposed region. We have performed a systematic sensitivity study of the molecules of the type RnM) where we have studied seven R groups, four main group metals (M), and three polymerizable carboxylate groups (O2CR‧). The sensitivity of these resists was evaluated using Emax or dose to maximum resist thickness after exposure and development. We found that the greatest predictor of sensitivity of the RnSb) resists is their level of polymerizable olefins. We mathematically define the polymerizable olefin loading (POL) as the ratio of the number of olefins versus the number of nonhydrogen atoms. Linear and log plots of Emax versus POL for a variety of molecules of the type R3Sb) lend insight into the behavior of these resists.

  7. Extreme and far ultraviolet astronomy from Voyagers 1 and 2

    NASA Technical Reports Server (NTRS)

    Holberg, J. B.

    1990-01-01

    The instrumental characteristics, observational capabilities and scientific results of the Voyager 1 and 2 ultraviolet spectrometers are reviewed. These instruments provide current and ongoing access to low resolution spectra for a wide variety of astronomical sources in the 500 to 1700 A band. Observations of the brightest OB stars and hot subluminous stars as faint as V = 15 mag, are possible. In the EUV, at wavelengths shortward of 900 A, several new sources have been detected and a host of potential sources ruled out. In the far UV, particularly at wavelengths between 900 and 1200 A, Voyager is capable of observing a wide range of stellar and non-stellar sources. Such observations can often provide a valuable complement to IUE and other data sets at longer wavelengths. The Voyager spectrometers have proved remarkably stable photon counting instruments, capable of extremely long integration times. The long integration times, relatively large field of view, and location in the outer solar system also provide an ideal platform for observations of sources of faint diffuse emission, such as nebulae and the general sky background.

  8. Extreme ultraviolet multilayer defect analysis and geometry reconstruction

    NASA Astrophysics Data System (ADS)

    Xu, Dongbo; Evanschitzky, Peter; Erdmann, Andreas

    2016-01-01

    This paper proposes a method for the characterization of multilayer defects from extreme ultraviolet (EUV) projection images at different focus positions. The transport-of-intensity equation is applied to retrieve the phase distribution of the reflected light in the vicinity of the defect. The defect-induced intensity and phase modifications and their dependency from defect geometry parameters are analyzed by several selected optical properties of multilayer defect. To reconstruct the defect geometry parameters from the intensity and phase of a defect, a principal component analysis (PCA) is employed to parameterize the intensity and phase distributions into principal component coefficients. In order to construct the base functions of the PCA, a combination of a reference multilayer defect and appropriate pupil filters is introduced to obtain the designed sets of intensity and phase distributions. Finally, an artificial neural network is applied to correlate the principal component coefficients of the intensity and the phase of the defect with the defect geometry parameters and to reconstruct the unknown defect geometry parameters. The performance of the proposed approach is evaluated both for mask blank defects and for defects in the vicinity of an absorber pattern.

  9. Overlying extreme-ultraviolet arcades preventing eruption of a filament observed by AIA/SDO

    SciTech Connect

    Chen, Huadong; Ma, Suli; Zhang, Jun

    2013-11-20

    Using the multi-wavelength data from the Atmospheric Imaging Assembly/Solar Dynamic Observatory (AIA/SDO) and the Sun Earth Connection Coronal and Heliospheric Investigation/Solar Terrestrial Relations Observatory (SECCHI/STEREO), we report a failed filament eruption in NOAA AR 11339 on 2011 November 3. The eruption was associated with an X1.9 flare, but without any coronal mass ejection (CME), coronal dimming, or extreme ultraviolet (EUV) waves. Some magnetic arcades above the filament were observed distinctly in EUV channels, especially in the AIA 94 Å and 131 Å wavebands, before and during the filament eruption process. Our results show that the overlying arcades expanded along with the ascent of the filament at first until they reached a projected height of about 49 Mm above the Sun's surface, where they stopped. The following filament material was observed to be confined by the stopped EUV arcades and not to escape from the Sun. After the flare, a new filament formed at the low corona where part of the former filament remained before its eruption. These results support that the overlying arcades play an important role in preventing the filament from successfully erupting outward. We also discuss in this paper the EUV emission of the overlying arcades during the flare. It is rare for a failed filament eruption to be associated with an X1.9 class flare, but not with a CME or EUV waves. Therefore, this study also provides valuable insight into the triggering mechanism of the initiation of CMEs and EUV waves.

  10. Combined microscopies study of the C-contamination induced by extreme-ultraviolet radiation: A surface-dependent secondary-electron-based model

    SciTech Connect

    Prezioso, S.; Donarelli, M.; Bisti, F.; Palladino, L.; Santucci, S.; Ottaviano, L.; Spadoni, S.; Avaro, L.; Liscio, A.; Palermo, V.

    2012-05-14

    SiO{sub 2} and Al{sub 2}O{sub 3} surfaces exposed to periodically modulated extreme ultraviolet (EUV) light ({lambda} = 46.9 nm) have been investigated at the {mu}m scale by optical microscopy, scanning electron microscopy, scanning Auger microscopy, atomic force microscopy, and Kelvin probe force microscopy. The formation of a carbon contamination layer preserving the same periodical modulation of the EUV dose has been observed. The mechanisms of hydrocarbon molecules deposition have been studied with the help of correlation plots between the modulated Auger signal and the corresponding EUV dose. A surface-dependent secondary-electron-based model has been proposed.

  11. Thermalization of electrons in decaying extreme ultraviolet photons induced low pressure argon plasma

    NASA Astrophysics Data System (ADS)

    Beckers, J.; van der Horst, R. M.; Osorio, E. A.; Kroesen, G. M. W.; Banine, V. Y.

    2016-06-01

    We monitored—in the pressure range: 0.5–15 Pa—the electron temperature in decaying plasmas induced in argon gas by pulsed irradiation with extreme ultraviolet (EUV) photons with wavelengths closely around 13.5 nm. For this purpose, temporal measurements of the space-averaged and electric field weighted electron density after pulsed EUV irradiation are combined with an ambipolar diffusion model of the plasma. Results demonstrate that electrons are thermalized to room temperature before the plasma has fully expanded to the chamber walls for pressures of 3 Pa and higher. At pressures below 3 Pa, the electron temperature was found to be up to 0.1 eV above room temperature which is explained by the fact that plasma expansion is too quick for the electrons to fully thermalize. The comparison between plasma expansion duration towards a surface, plasma decay at a surface and time needed for thermalization and cooling of electrons is essential for designers of EUV lithography tools and EUV sources since the temperature of electrons dictates many fundamental physical processes.

  12. Mitigation of ion and particulate emission from laser-produced plasmas used for extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Di Lazzaro, Paolo; Bollanti, Sarah; Flora, Francesco; Mezi, Luca; Murra, Daniele; Torre, Amalia

    2013-05-01

    While developing a laboratory-scale micro-exposure tool for extreme ultraviolet (EUV) projection lithography which uses a laser-produced plasma emitting EUV pulsed radiation, we faced the problem of suppressing the various debris (ions, neutrals, particulate, clusters, droplets) emitted by the plasma target. The suppression of debris is a crucial task in the frame of EUV projection lithography, mainly because debris seriously limit both lifetime and performance of the expensive optics and filters put close to the plasma source. In this paper we present the experimental measurements of main debris characteristics (velocity, size, charge, momentum, spectral energy, spatial distribution). Then, we present the operating results of a patented debris mitigation systems (DMS) specifically designed to suppress debris with the measured characteristics. We achieved reduction factors ˜800 for atoms and nm-size clusters, and ˜1600 for particles larger than 500 nm. These results are at the forefront in this field. The excellent performance of our DMS was a breakthrough to achieve a 90-nm patterning on commercial resists by our micro-exposure tool EUV projection lithography.

  13. Considerations for a free-electron laser-based extreme-ultraviolet lithography program

    NASA Astrophysics Data System (ADS)

    Hosler, Erik R.; Wood, Obert R.; Barletta, William A.; Mangat, Pawitter J. S.; Preil, Moshe E.

    2015-03-01

    Recent years have seen great strides in the development of extreme ultraviolet (EUV) laser-produced plasma sources. Field deployed EUV exposure tools are now capable of facilitating advanced technology node development. Nevertheless, as the required manufacturing exposure dose scales, EUV sources must follow suit and provide 500- 1000 W to maintain production throughputs. A free-electron laser (FEL) offers a cost effective, single-source alternative for powering an entire EUV lithography program. FEL integration into semiconductor fab architecture will require both unique facility considerations as well as a paradigm shift in lithography operations. Critical accelerator configurations relating to energy recovery, multi-turn acceleration, and operational mode are discussed from engineering/scientific, cost-minimization, and safety perspectives. Furthermore, the individual components of a FEL (electron injector, RF systems, undulator, etc.) are examined with respect to both design and cost, considering existing technology as well as prospective innovations. Finally, FEL development and deployment roadmaps are presented, focusing on manufacturer deployment for the 5 nm or 3 nm technology nodes.[1-3

  14. Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

    SciTech Connect

    Spector, S. J.; White, D. L.; Tennant, D. M.; Ocola, L. E.; Novembre, A. E.; Peabody, M. L.; Wood, O. R. II

    1999-11-01

    We have developed two new methods for at-wavelength inspection of mask blanks for extreme-ultraviolet (EUV) lithography. In one method an EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. In the second method, the photoresist is applied to an EUV transparent membrane that is placed in close proximity to the mask and then exposed and developed. Both reflectivity defects and phase defects alter the exposure of the resist, resulting in mounds of resist at defect sites that can then be located by visual inspection. In the direct application method, a higher contrast resist was shown to increase the height of the mounds, thereby improving the sensitivity of the technique. In the membrane method, a holographic technique was used to reconstruct an image of the mask, revealing the presence of very small defects, approximately 0.2 {mu}m in size. The demonstrated clean transfer of phase and amplitude defects to resist features on a membrane will be important when flagging defects in an automatic inspection tool. (c) 1999 American Vacuum Society.

  15. Large-solid-angle illuminators for extreme ultraviolet lithography with laser plasmas

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Sweatt, W.C.; Chow, W.W.

    1995-06-01

    Laser Plasma Sources (LPSS) of extreme ultraviolet radiation are an attractive alternative to synchrotron radiation sources for extreme ultraviolet lithography (EUVL) due to their modularity, brightness, and modest size and cost. To fully exploit the extreme ultraviolet power emitted by such sources, it is necessary to capture the largest possible fraction of the source emission half-sphere while simultaneously optimizing the illumination stationarity and uniformity on the object mask. In this LDRD project, laser plasma source illumination systems for EUVL have been designed and then theoretically and experimentally characterized. Ellipsoidal condensers have been found to be simple yet extremely efficient condensers for small-field EUVL imaging systems. The effects of aberrations in such condensers on extreme ultraviolet (EUV) imaging have been studied with physical optics modeling. Lastly, the design of an efficient large-solid-angle condenser has been completed. It collects 50% of the available laser plasma source power at 14 nm and delivers it properly to the object mask in a wide-arc-field camera.

  16. Tolerancing of diffraction-limited Kirkpatrick-Baez synchrotron beamline optics for extreme-ultraviolet metrology.

    PubMed

    Naulleau, P P; Goldberg, K A; Batson, P J; Jeong, S; Underwood, J H

    2001-08-01

    The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, elliptically bent mirrors in series. To achieve high-efficiency focusing into a small spot, unprecedented fabrication and assembly tolerance is required of these systems. Here we present a detailed error-budget analysis and develop a set of specifications for diffraction-limited performance for the K-B optic operating on the EUV interferometry beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The specifications are based on code v modeling tools developed explicitly for these optical systems. Although developed for one particular system, the alignment sensitivities presented here are relevant to K-B system designs in general. PMID:18360402

  17. Extreme Ultraviolet Explorer observations of the RS Canum Venaticorum systems AR Lacertae and II Pegasi

    NASA Technical Reports Server (NTRS)

    Petterer, R. J.; Vedder, P. W.; Jelinsky, P.; Brown, A.; Bowyer, S.

    1993-01-01

    We report observations of two RS CVn systems, II Peg and AR Lac, which were calibration targets during the in-orbit checkout phase of the Extreme Ultraviolet Explorer (EUVE). We have determined count rates, and, based on these count rates, preliminary emission measure analyses have been done. The Lexan/boron band count rates were 0.0849 +/- 0.0023 counts/s for AR Lac and 0.218 +/- 0.031 counts/s for II Peg during its quiescent state. Temperatures and emission measures derived from the EUVE data are consistent with previously published values. We also report a flare seen during the II Peg observations which has characteristics similar to previously observed flares on II Peg. During the flare the Lexan/boron count rate increased by at least a factor of 2.5, and the minimum total duration was about 34,000 s (about 9.4 hr).

  18. Electron-Impact-Induced Emission Cross Sections of Neon in the Extreme Ultraviolet

    NASA Technical Reports Server (NTRS)

    Kanik, I.; Ajello, J. M.; James, G. K.

    1996-01-01

    We have measured the extreme ultraviolet (EUV) spectrum of neon produced by electron excitation. The measurements were obtained under optically thin conditions, and at a spectral resolution of 0.5 nm full width at half maximum (FWHM). The most prominent features of the EUV spectrum between 45-80 nm are the resonance lines of Ne I at 73.6 and 74.4 nm and a multiplet of Ne II at 46.14 nm (the average value for the line center of the two closely spaced ion lines at 46.07 and 46.22 nm). Absolute emission cross sections of these lines at 300 eV were measured and compared to other previous measurements.

  19. Note: Thermally stable thin-film filters for high-power extreme-ultraviolet applications.

    PubMed

    Tarrio, C; Berg, R F; Lucatorto, T B; Lairson, B; Lopez, H; Ayers, T

    2015-11-01

    We investigated several types of thin-film filters for high intensity work in the extreme-ultraviolet (EUV) spectral range. In our application, with a peak EUV intensity of 2.7 W cm(-2), Ni-mesh-backed Zr filters have a typical lifetime of 20 h, at which point they suffer from pinholes and a 50% loss of transmission. Initial trials with Si filters on Ni meshes resulted in rupture of the filters in less than an hour. A simple thermal calculation showed that the temperature rise in those filters to be about 634 K. A similar calculation indicated that using a finer mesh with thicker wires and made of Cu reduces the temperature increase to about 60 K. We have exposed a Si filter backed by such a mesh for more than 60 h with little loss of transmission and no leaks. PMID:26628184

  20. Fluorescence efficiency and visible re-emission spectrum of tetraphenyl butadiene films at extreme ultraviolet wavelengths

    NASA Astrophysics Data System (ADS)

    Gehman, V. M.; Seibert, S. R.; Rielage, K.; Hime, A.; Sun, Y.; Mei, D.-M.; Maassen, J.; Moore, D.

    2011-10-01

    A large number of current and future experiments in neutrino and dark matter detection use the scintillation light from noble elements as a mechanism for measuring energy deposition. The scintillation light from these elements is produced in the extreme ultraviolet (EUV) range, from 60 to 200 nm. Currently, the most practical technique for observing light at these wavelengths is to surround the scintillation volume with a thin film of tetraphenyl butadiene (TPB) to act as a fluor. The TPB film absorbs EUV photons and re-emits visible photons, detectable with a variety of commercial photosensors. Here we present a measurement of the re-emission spectrum of TPB films when illuminated with 128, 160, 175, and 250 nm light. We also measure the fluorescence efficiency as a function of incident wavelength from 120 to 250 nm.

  1. Nanoscale electron beam-induced deposition and purification of ruthenium for extreme ultraviolet lithography mask repair

    NASA Astrophysics Data System (ADS)

    Noh, J. H.; Stanford, M. G.; Lewis, B. B.; Fowlkes, J. D.; Plank, H.; Rack, P. D.

    2014-12-01

    One critical area for the adoption of extreme ultraviolet (EUV) lithography is the development of appropriate mask repair strategies. To this end, we have explored focused electron beam-induced deposition of the ruthenium capping or protective layer. Electron beam-induced deposition (EBID) was used to deposit a ruthenium capping/protective film using the liquid bis(ethylcyclopentyldienyl)ruthenium(II) precursor. The carbon to ruthenium atomic ratio in the as-deposited material was estimated to be ~9/1. Subsequent to deposition, we demonstrate an electron stimulated purification process to remove carbon by-products from the deposit. Results indicate that high-fidelity nanoscale ruthenium repairs can be realized.

  2. Measured Pre-Flight Performance of the Extreme Ultraviolet Normal Incidence Spectrograph (EUNIS)

    NASA Astrophysics Data System (ADS)

    Thomas, R. J.; Rabin, D. M.; Nowak, M. D.; Gum, J. S.; Seely, J. F.; Seshadri, S.; Siegmund, O. H.

    2005-05-01

    The Extreme Ultraviolet Normal-Incidence Spectrograph (EUNIS) is a sounding rocket experiment that will investigate the energetics of the solar corona and hotter transition region through high-resolution imaging spectroscopy with a rapid (2 s) cadence. EUNIS features independent optical systems to record spatially co-aligned spectra over the two bandpasses 170--205 Å and 300--370 Å simultaneously. All the components in the detection chain have been characterized, including multilayer telescope mirrors, lithographic slits, multilayer diffraction gratings, microchannel plate intensifiers, and active pixel sensors. The results demonstrate that EUNIS is the most sensitive solar EUV spectrograph in existence. Its first flight is scheduled for 2005 August.

  3. Grazing incidence metal optics for the Berkeley Extreme Ultraviolet Explorer satellite - A progress report

    NASA Technical Reports Server (NTRS)

    Finley, D.; Malina, R. F.; Bowyer, S.

    1985-01-01

    The four flight Wolter-Schwarzschild mirrors currently under fabrication for the Extreme Ultraviolet Explorer (EUVE) satellite are described. The principal figuring operation of these grazing incidence metal mirrors (gold over nickel on an aluminum substrate) is carried out by diamond turning at the Lawrence Livermore National Laboratories. Turning has been accomplished and optical testing results analyzed for three of the mirrors. As-turned values of 1.7 arc sec full width at half maximum (FWHM) and half energy width (HEW) of 5 arc seconds in the visible have been achieved. These results illustrate the great potential of precision fabrication technology for the production of large grazing incidence optics.

  4. The EUVE bright source list

    NASA Technical Reports Server (NTRS)

    Stroozas, B.; Mcdonald, K.; Antia, B.; Mcdonald, J.; Wiercigroch, A.

    1993-01-01

    Initial results for bright extreme ultraviolet sources discovered during the EUVE all-sky and deep ecliptic surveys have been published as a Bright Source List (BSL) and released to the astronomical community with a recent NASA research announcement (NRA 93-OSS-02, Appendix F). This paper describes the data processing software, the EUVE survey data set, and the production of the BSL at the Center for EUV Astrophysics. The contents, format, and selection criteria for sources, the data processing strategy, some problems encountered, and a summary of the BSL results are presented.

  5. MAGNETIC RECONNECTION: FROM 'OPEN' EXTREME-ULTRAVIOLET LOOPS TO CLOSED POST-FLARE ONES OBSERVED BY SDO

    SciTech Connect

    Zhang, Jun; Yang, Shuhong; Li, Ting; Zhang, Yuzong; Li, Leping; Jiang, Chaowei E-mail: shuhongyang@nao.cas.cn E-mail: yuzong@nao.cas.cn E-mail: cwjiang@spaceweather.ac.cn

    2013-10-10

    We employ Solar Dynamics Observatory observations and select three well-observed events including two flares and one extreme-ultraviolet (EUV) brightening. During the three events, the EUV loops clearly changed. One event was related to a major solar flare that took place on 2012 July 12 in active region NOAA AR 11520. 'Open' EUV loops rooted in a facula of the AR deflected to the post-flare loops and then merged with them while the flare ribbon approached the facula. Meanwhile, 'open' EUV loops rooted in a pore disappeared from top to bottom as the flare ribbon swept over the pore. The loop evolution was similar in the low-temperature channels (e.g., 171 Å) and the high-temperature channels (e.g., 94 Å). The coronal magnetic fields extrapolated from the photospheric vector magnetograms also show that the fields apparently 'open' prior to the flare become closed after it. The other two events were associated with a B1.1 flare on 2010 May 24 and an EUV brightening on 2013 January 03, respectively. During both of these two events, some 'open' loops either disappeared or darkened before the formation of new closed loops. We suggest that the observations reproduce the picture predicted by the standard magnetic reconnection model: 'open' magnetic fields become closed due to reconnection, manifesting as a transformation from 'open' EUV loops to closed post-flare ones.

  6. Femtosecond transparency in the extreme ultraviolet

    NASA Astrophysics Data System (ADS)

    Tarana, Michal; Greene, Chris H.

    2012-06-01

    Electromagnetically induced transparency-like behavior in the extreme ultraviolet (XUV) is studied theoretically, including the effect of intense 800nm laser dressing of He 2s2p(^1P^o) and 2p^2(^2S^e) autoionizing states. We present an ab initio solution of the time-dependent Schr"odinger equation in an LS-coupling configuration interaction basis set. The method enables a rigorous treatment of optical field ionization of these coupled autoionizing states into the N = 2 continuum in addition to N = 1. Our calculated transient absorption spectra show the formation of the Autler-Townes doublet in the presence of the dressing laser field. The presented results are in encouraging agreement with experiment [1]. [4pt] [1] Z.H. Loh, C.H. Greene, and S. R. Leone, Chem. Phys. 350, 7 (2008)

  7. Extreme-Ultraviolet Observations of Nine Pulsars

    NASA Astrophysics Data System (ADS)

    Seon, Kwang-Il; Edelstein, Jerry

    1998-05-01

    We report the observation of nine pulsars using the Lexan (100 Å) band of the Extreme Ultraviolet Explorer scanning telescopes. The observations, none of which resulted in positive detections, are used to derive limits to the temperature of surface thermal radiation from the objects. We compare the temperature limits with predictions from neutron star cooling models. The N_H I toward our targets limits our ability to establish rigorous limits needed to discriminate among the models. We also derive a limit to heating by magnetic monopole flux-catalyzed nucleon decay for the very old pulsar PSR J1455-3330, which is similar to the limit derived for PSR B1929+10 and 3 orders of magnitude larger than the limit for PSR J0437-4715.

  8. Reaction Mechanism of Extreme Ultraviolet Resists

    NASA Astrophysics Data System (ADS)

    Toriumi, Minoru; Kaneyama, Koji; Itani, Toshiro

    2008-06-01

    Molecular resist of polyphenol was evaluated as an extreme-ultraviolet resist compared with a polymer resist of poly(tert-butoxycarbonylhydroxystyrene). X-ray reflectometry was used to determine the resist-film density and measurement accuracy was improved. The molecular resist shows higher sensitivity of 3 mJ/cm2 than the polymer resist of 4 mJ/cm2. The deprotection mechanism was approximated by simple reaction equations and Fourier-transform infrared spectra was interpreted to give the products of a quantum yield and a deprotection rate constant as 9.7×10-8 and 8.1×10-8 cm3 molecule-1 s-1 for molecular and polymer resists. The higher sensitivity of the molecular resist is due to the larger efficiency of the reaction mechanism.

  9. Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation

    NASA Astrophysics Data System (ADS)

    Houser, David C.; Dong, Feng; Perera, Chami N.; Perera, Rupert C. C.

    2015-09-01

    Extreme Ultraviolet (EUV) Lithography is still viewed as the most promising approach for maintaining the pace of Moore's Law. Recent real achievements in EUV Lithography (EUVL) have encouraged semiconductor manufacturers to reconsider their road maps. One of the principal challenges in the ongoing EUVL implementation for high volume manufacturing (HVM) is the availability of necessary clean at wavelength metrology tools. EUV Tech is the world's leading manufacturer of at-wavelength EUV metrology equipment. Founded in 1997, EUV Tech has pioneered the development of several stand-alone inspection, metrology, and calibration tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. In this paper, EUV Tech's R&D program to minimize particle adders in our EUV Reflectometer along with the ongoing effort to enhance the reflectivity and wavelength, precision and accuracy required to qualify the EUV masks for HVM. In addition to preliminary results from our stand alone EUV Scatterometer developed to characterize the phase roughness of a EUV mask and the introduction of EUV Tech's Pellicle test suite for testing EUV pellicles.

  10. EUV resists: What's next?

    NASA Astrophysics Data System (ADS)

    Lio, Anna

    2016-03-01

    The need to print smaller features and tighter pitches drives the development of new photolithography technologies. Extreme Ultraviolet Lithography (EUVL) at 13.5 nm wavelength is expected to provide considerable resolution gain over the current technology based on 193 nm wavelength. In this paper we assess the current status of EUV photoresists and their readiness for EUVL insertion into High Volume Manufacturing (HVM). In addition, we discuss the requirements that EUV photoresists will need to satisfy in the near and long term future.

  11. Transient charge dynamics in argon-cluster nanoplasmas created by intense extreme-ultraviolet free-electron-laser irradiation

    NASA Astrophysics Data System (ADS)

    Iwayama, H.; Harries, J. R.; Shigemasa, E.

    2015-02-01

    We present extreme-ultraviolet (EUV) fluorescence spectra of Ar clusters irradiated by intense EUV free-electron-laser (FEL) pulses focused to intensities of up to 3 ×1013W /cm2 at a wavelength of 51 nm. The spectra reveal fluorescence at wavelengths shorter than that of the incident radiation, which can be assigned to EUV fluorescence lines from excited multiply charged ions A rz +* with z as high as 6. This demonstrates that charge states as high as 7+ are produced by the FEL irradiation. The dependence of the spectra on cluster size shows that the highly charged ions are generated at the cluster surface, indicating inhomogeneous charging. The FEL power dependencies of the spectral features suggest that the inhomogeneous distribution of charge within the clusters reduces ionization thresholds at the cluster surface.

  12. Scanning X-Ray Or Extreme-Ultraviolet Monochromator

    NASA Technical Reports Server (NTRS)

    Hoover, Richard

    1991-01-01

    Wavelength of peak transmission of proposed high-throughput, narrow-band-pass x-ray or extreme-ultraviolet monochromator continuously adjustable. Essential filtering and reflecting components designed according to principles described in "Compact X-Ray and Extreme-Ultraviolet Monochromator" (MFS-28499). However, angle of incidence varied to change wavelength of Bragg reflection.

  13. EUV and infra-red lines of Fe 13

    NASA Technical Reports Server (NTRS)

    Young, P. R.; Mason, Helen E.; Thomas, R. J.

    1994-01-01

    New level population calculations for Fe-XIII are presented, and line intensities predicted. The extreme ultraviolet (EUV) lines are compared with the recent observations of the solar extreme ultraviolet rocket telescope and spectrograph (SERTS), and density estimates for the active region are given. Uses of the Fe-XIII lines are suggested, both for the sun and other stars, and the possibility of coordinating SOHO studies of EUV lines with ground based observations of Fe-XIII infrared lines is discussed.

  14. Novel high sensitivity EUV photoresist for sub-7nm node

    NASA Astrophysics Data System (ADS)

    Nagai, Tomoki; Nakagawa, Hisashi; Naruoka, Takehiko; Tagawa, Seiichi; Oshima, Akihiro; Nagahara, Seiji; Shiraishi, Gosuke; Yoshihara, Kosuke; Terashita, Yuichi; Minekawa, Yukie; Buitrago, Elizabeth; Ekinci, Yasin; Yildirim, Oktay; Meeuwissen, Marieke; Hoefnagels, Rik; Rispens, Gijsbert; Verspaget, Coen; Maas, Raymond

    2016-03-01

    Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.

  15. Imaging polarimeters for solar extreme ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Hoover, Richard B.; Fineschi, Silvano; Fontenla, Juan M.; Walker, Arthur B. C., Jr.

    1991-01-01

    Accounts are given of EUV/FUV polarimetric instrument concepts for solar research which observe linear polarization in the spectral lines which originate in the outer solar atmosphere. The coronagraph/polarimeter instruments discussed employ all-reflective optical systems using ultrasmooth, low-scatter normal incidence mirrors and reflective polarization analyzers. The reflecting polarization analyzers operate at the Brewster angle.

  16. Line image sensors for spectroscopic applications in the extreme ultraviolet

    NASA Astrophysics Data System (ADS)

    Banyay, Matus; Brose, Sascha; Juschkin, Larissa

    2009-10-01

    The spectral range of extreme ultraviolet radiation (XUV or EUV) is an active area of research incorporating many scientific fields such as microscopy, lithography or reflectometry. During the last decade, a lot of effort has been put into transferring many of the known techniques developed at linear accelerators into the laboratory using discharge-produced plasmas (DPPs) or laser-produced plasmas (LPPs) as an alternative light source. In particular, the semiconductor industry is in need of on-site tools in the shorter wavelength range for production and inspection of structured surfaces with nanometer resolution. Here traditional charge coupled device (CCD) image sensors are inapplicable as detectors because of the strong absorption of XUV by matter prohibiting any generation of electron-hole pairs inside a deep lying p-n junction. As a solution, two-dimensional backthinned CCDs are available in the market offering high sensitivity to XUV light. Although for many applications a one-dimensional line scanning image sensor would be sufficient, they are non-existent for XUV. It is only lately that manufacturers have started to adopt the principle of backthinning to CCD line sensors to enhance sensitivity in the long wavelength UV range (>200 nm). Here we show that generally these compact sensors offer good quantum efficiencies in the XUV which make them a candidate for many spectroscopic applications and future industrial inline inspection tools for which costly two-dimensional CCDs are oversized. We have successfully implemented a compact sensor device into a laboratory XUV spectrometer and reflectometer. Our measurements compare the quantum efficiency of a state-of-the-art XUV array CCD to a phosphor-coated line sensor and a new backthinned line sensor. Additionally, we show recorded spectra from a laboratory DPP source to demonstrate the potential of a wide range of applications.

  17. Advanced materials for multilayer mirrors for extreme ultraviolet solar astronomy.

    PubMed

    Bogachev, S A; Chkhalo, N I; Kuzin, S V; Pariev, D E; Polkovnikov, V N; Salashchenko, N N; Shestov, S V; Zuev, S Y

    2016-03-20

    We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3  nm, λ=17-21  nm, λ=28-33  nm, and λ=58.4  nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13  nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21  nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30  nm, the Si/B4C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B4C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58  nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination. PMID:27140543

  18. Sources for beyond extreme ultraviolet lithography and water window imaging

    NASA Astrophysics Data System (ADS)

    O'Sullivan, Gerry; Li, Bowen; Dunne, Padraig; Hayden, Paddy; Kilbane, Deirdre; Lokasani, Ragava; Long, Elaine; Ohashi, Hayato; O'Reilly, Fergal; Sheil, John; Sheridan, Paul; Sokell, Emma; Suzuki, Chihiro; White, Elgiva; Higashiguchi, Takeshi

    2015-05-01

    Lithography tools are being built and shipped to semiconductor manufacturers for high volume manufacturing using extreme ultraviolet lithography (EUVL) at a wavelength of 13.5 nm. This wavelength is based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ˜70% at this wavelength. Moreover, the primary lithography tool manufacturer, ASML, has identified 6.x nm, where x˜7, as the wavelength of choice for so-called Beyond EUVL, based on the availability of La/B4C MLMs, with theoretical reflectance approaching 80% at this wavelength. The optimum sources have been identified as laser produced plasmas of Gd and Tb, as n = 4-n = 4 transitions in their ions emit strongly near this wavelength. However, to date, the highest conversion efficiency obtained, for laser to EUV energy emitted within the 0.6% wavelength bandwidth of the mirror is only 0.8%, pointing to the need to identify other potential sources or consider the selection of other wavelengths. At the same time, sources for other applications are being developed. Conventional sources for soft x-ray microscopy use H-like line emission from liquid nitrogen or carbon containing liquid jets which can be focused using zone plates. Recently the possibility of using MLMs with n = 4-n = 4 emission from a highly charged Bi plasma was proposed and subsequently the possibility of using Δn = 1 transitions in 3rd row transition elements was identified. All of these studies seek to identify spectral features that coincide with the reflectance characteristics of available MLMs, determine the conditions under which they are optimized and establish the maximum conversion efficiencies obtainable. Thus, there is a need for systematic studies of laser produced plasmas of a wide range of elements as some of the challenges are similar for all of these sources and some recent results will be presented.

  19. AN AUTOMATIC DETECTION METHOD FOR EXTREME-ULTRAVIOLET DIMMINGS ASSOCIATED WITH SMALL-SCALE ERUPTION

    SciTech Connect

    Alipour, N.; Safari, H.; Innes, D. E.

    2012-02-10

    Small-scale extreme-ultraviolet (EUV) dimming often surrounds sites of energy release in the quiet Sun. This paper describes a method for the automatic detection of these small-scale EUV dimmings using a feature-based classifier. The method is demonstrated using sequences of 171 Angstrom-Sign images taken by the STEREO/Extreme UltraViolet Imager (EUVI) on 2007 June 13 and by Solar Dynamics Observatory/Atmospheric Imaging Assembly on 2010 August 27. The feature identification relies on recognizing structure in sequences of space-time 171 Angstrom-Sign images using the Zernike moments of the images. The Zernike moments space-time slices with events and non-events are distinctive enough to be separated using a support vector machine (SVM) classifier. The SVM is trained using 150 events and 700 non-event space-time slices. We find a total of 1217 events in the EUVI images and 2064 events in the AIA images on the days studied. Most of the events are found between latitudes -35 Degree-Sign and +35 Degree-Sign . The sizes and expansion speeds of central dimming regions are extracted using a region grow algorithm. The histograms of the sizes in both EUVI and AIA follow a steep power law with slope of about -5. The AIA slope extends to smaller sizes before turning over. The mean velocity of 1325 dimming regions seen by AIA is found to be about 14 km s{sup -1}.

  20. Extreme ultraviolet spectroscopy of the planetary magnetospheres from the earth-orbiting satellite

    NASA Astrophysics Data System (ADS)

    Murakami, G.; Yoshioka, K.; Ishii, H.; Uji, K.; Yoshikawa, I.; Kagitani, M.; Tsuchiya, F.; Yamazaki, A.; Uemizu, K.

    2012-04-01

    The extreme ultraviolet (EUV) telescope (Extreme Ultraviolet Spectroscope for Exospheric Dynamics: EXCEED) onboard the Japan's small satellite (SPRINT-A) will be launched in 2013. The EXCEED instrument will obtain spectral images of tenuous gases and plasmas around the planets in the solar system (e.g., Mercury, Venus, Mars, Jupiter, and Saturn). One of the primary observation targets is Jupiter, whose magnetospheric plasma dynamics is dominated by planetary rotation. In the EUV range, a number of emission lines originate from plasmas in the Jupiter's inner magnetosphere. The EXCEED instrument is designed to have a wavelength range of 55-145 nm with a spectral resolution of 0.4-1.0 nm. The spectrograph slits have a field of view of 400 x 140 arc-seconds (maximum), and the attitude fluctuations are stabilized within 5 arc-seconds. The optics of the instrument consists of a primary mirror with a diameter of 20cm, a laminar type grating, and a 5-stage microchannel plate assembly with a resistive anode encoder. The surfaces of the primary mirror and the grating are coated with CVD-SiC. In this presentation, we report the general mission overview, the instrumentations, and the initial results of ground calibrations.

  1. Research in extreme ultraviolet and far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Bowyer, C. S.

    1987-01-01

    Analysis and interpretation continued on data generated by the flight of 27.086 in April of 1986 and by the successful UVX mission. Optical and mechanical design of the 1 meter EUV telescope, planned for launch with the large SPARTAN type carrier, ASTRO-SPAS, was also continued. The major effort centered on the preparation of flight 27.106, scheduled to launch in September, 1986. Work which was performed included: design of the skins and bulkheads; completion of the optical, mechanical, and electrical design; purchase of the major components of the instruments; assemblage of the electrical components; and performance of theoretical work, to support the data interpretation.

  2. New Solar Extreme-Ultraviolet and Soft X-ray Measurements: Model Comparisons with Thermosphere and Ionosphere Observations

    NASA Astrophysics Data System (ADS)

    Solomon, S. C.; Bailey, S. M.; Christensen, A. B.; Eparvier, F. G.; Gladstone, G. R.; Paxton, L. J.; Wolven, B. C.; Woods, T. N.

    2002-05-01

    The Solar EUV Experiment (SEE) on the Thermosphere-Ionosphere-Mesosphere Energetics and Dynamics (TIMED) spacecraft is performing the first comprehensive measurements of the extreme-ultraviolet and soft X-ray region of the solar spectrum since the end of the Atmosphere Explorer (AE) mission in 1981. Comparison of TIMED/SEE measurements to contemporaneous satellite observations and a calibration rocket shows that solar irradiance in the soft X-ray and hard EUV spectral ranges, from about 2 to 25 nm, is much more intense than the AE-era observations. Using these new results as inputs to thermosphere/ionosphere models causes revisions to predicted photoelectron fluxes, ionization rates, electron density, ion composition, odd-nitrogen composition, and airglow emission rates. We compare predictions to measurements for some of these, including ground based measurements of ionospheric parameters during the first phase of the TIMED mission and far-ultraviolet dayglow limb profiles measured by the GUVI instrument.

  3. Reflective masks for extreme ultraviolet lithography

    SciTech Connect

    Nguyen, Khanh Bao

    1994-05-01

    Extreme ultraviolet lithographic masks are made by patterning multilayer reflective coatings with high normal incidence reflectivity. Masks can be patterned by depositing a patterned absorber layer above the coating or by etching the pattern directly into the coating itself. Electromagnetic simulations showed that absorber-overlayer masks have superior imaging characteristics over etched masks (less sensitive to incident angles and pattern profiles). In an EUVL absorber overlayer mask, defects can occur in the mask substrate, reflective coating, and absorber pattern. Electromagnetic simulations showed that substrate defects cause the most severe image degradation. A printability study of substrate defects for absorber overlayer masks showed that printability of 25 nm high substrate defects are comparable to defects in optical lithography. Simulations also indicated that the manner in which the defects are covered by multilayer reflective coatings can affect printability. Coverage profiles that result in large lateral spreading of defect geometries amplify the printability of the defects by increasing their effective sizes. Coverage profiles of Mo/Si coatings deposited above defects were studied by atomic force microscopy and TEM. Results showed that lateral spread of defect geometry is proportional to height. Undercut at defect also increases the lateral spread. Reductions in defect heights were observed for 0.15 {mu}m wide defect lines. A long-term study of Mo/Si coating reflectivity revealed that Mo/Si coatings with Mo as the top layer suffer significant reductions in reflectivity over time due to oxidation.

  4. EUVE Guest Observer Program Handbook, 4th Edition

    NASA Astrophysics Data System (ADS)

    Miller, A.

    1997-09-01

    This Handbook will acquaint potential Guest Observers with the Extreme Ultraviolet Explorer (EUVE) Spectrometer, Scanning Telescopes, and Deep Survey Scanner. It should be used as a guide to preparation of proposals, and as a basic source of information about the EUVE mission and scientific payload.

  5. Changes of solar extreme ultraviolet spectrum in solar cycle 24

    NASA Astrophysics Data System (ADS)

    Hao, Yongqiang; Zhang, Donghe; Xiao, Zuo; Huang, Jianping

    2016-07-01

    Following the extreme solar minimum during 2008 - 2009, solar activity keeps low in solar cycle 24 (SC24) and is making SC24 the weakest one of recent cycles. In this paper, we compare the solar EUV spectral irradiance between SC23 and SC24, using the measurements by the Solar EUV Experiment (SEE) on the Thermospheric Ionospheric Mesospheric Energy and Dynamics (TIMED) spacecraft. The EUV spectrum varies with solar activity, and is in general a linear function of a proxy index P= (F10.7 + F10.7A)/2. However, we find the slope of this function, i.e., the change rate of irradiance at each wavelength with P, differs between SC23 and SC24. Consequently, at a given P level, the irradiance in SC24 is higher at wavelength of 30 - 50 nm, but lower at 60 - 120 nm and longward of 140 nm; the inter-cycle variation of EUV irradiance at some wavelengths can be 30 - 40% in absolute flux. We further examine 38 most intense emission lines and find that, taking P as a reference, most of the bright coronal lines get stronger in SC24 and, by contrast, those from the chromosphere and transition region have less variability in SC24. We therefore suggest that, the empirical relation between solar EUV and P, which is derived from observations in previous solar cycles, may not adapt to SC24. The changes in EUV spectrum need to be considered in the models for aeronomic study, especially those using F10.7 index as an input parameter.

  6. The Berkeley extreme ultraviolet calibration facility

    NASA Technical Reports Server (NTRS)

    Welsh, Barry Y.; Jelinsky, Patrick; Malina, Roger F.

    1988-01-01

    The vacuum calibration facilities of the Space Sciences Laboratory, University of California at Berkeley are designed for the calibration and testing of EUV and FUV spaceborne instrumentation (spectral range 44-2500 A). The facility includes one large cylindrical vacuum chamber (3 x 5 m) containing two EUV collimators, and it is equipped with a 4-axis manipulator of angular-control resolution 1 arcsec for payloads weighing up to 500 kg. In addition, two smaller cylindrical chambers, each 0.9 x 1.2 m, are available for vacuum and thermal testing of UV detectors, filters, and space electronics hardware. All three chambers open into class-10,000 clean rooms, and all calibrations are referred to NBS secondary standards.

  7. Geomagnetic Tail Lab (GEOTAIL) Diffuse Ultraviolet Experiment (DUVE) Processing

    NASA Technical Reports Server (NTRS)

    1992-01-01

    At Launch Complex 17 Pad A, Kennedy Space Center (KSC) workers are installing the payload fairing around the Extreme Ultraviolet Explorer (EUVE) mated to a Delta II rocket. The EUVE spacecraft is designed to study the extreme ultraviolet portion of the spectrum.

  8. Earth-orbiting Extreme Ultraviolet Spectroscopic Mission SPRINT-A/EXCEED

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Fuminori; Yoshikawa, I.; Yamazaki, A.; Yoshioka, K.; Uemizu, K.; Murakami, G.; Kimura, T.; Kagitani, M.; Terada, N.; Kasaba, Y.; Sakanoi, T.

    2012-10-01

    The EXCEED (Extreme Ultraviolet Spectroscope for Exospheric Dynamics) mission is an Earth-orbiting extreme ultraviolet (EUV) spectroscopic mission and the first in the SPRINT series of ISAS/JAXA. It will be launched in the summer of 2013. EUV spectroscopy is suitable for observing tenuous gases and plasmas around planets in the solar system. One of the primary targets is an inner magnetosphere of Jupiter, whose plasma dynamics is dominated by planetary rotation. In the EUV range, a number of emission lines originate from plasmas distributed in Jupiter’s inner magnetosphere. The spectrograph is designed to have a wavelength range of 55-145 nm with minimum spectral resolution of 0.4 nm, enabling the electron temperature and ion composition in the inner magnetosphere to be determined. Another objective is to investigate an unresolved problem concerning the escape of the atmosphere to space. EXCEED plans to make imaging observations of plasmas around Venus and Mars to determine the amounts of escaping atmosphere. The optics of the instrument consists of a primary mirror with a diameter of 20cm, a laminar type grating, and a 5-stage micro-channel plate assembly with a resistive anode encoder. The spectrograph slits have a FOV of 400 x 140 arc-seconds (maximum). To achieve high efficiencies, the surfaces of the primary mirror and the grating are coated with CVD-SiC. A feasibility study shows that EXCEED can determine plasma parameters in the Io plasma torus using an exposure time of 50 minutes. EXCEED also has another instruments, a target guide camera. It will be used to capture the target and guide the observation area to the slit with an accuracy of ±5 arc-seconds. With the help of the target guide camera, we will take spectral images with a long exposure time of 50 minutes and good spatial resolution of 20 arc-seconds.

  9. Extreme ultraviolet spectroscopy of low-Z ion plasmas for fusion applications

    SciTech Connect

    Wilcox, P. G.; Safronova, A. S.; Kantsyrev, V. L.; Safronova, U. I.; Williamson, K. M.; Yilmaz, M. F.; Clementson, J.; Beiersdorfer, P.; Struve, K. W.

    2008-10-15

    The study of impurities is a key component of magnetic fusion research as it is directly related to plasma properties and steady-state operation. Two of the most important low-Z impurities are carbon and oxygen. The appropriate method of diagnosing these ions in plasmas is extreme ultraviolet (EUV) spectroscopy. In this work the results of two different sets of experiments are considered, and the spectra in a spectral region from 40 to 300 A are analyzed. The first set of experiments was carried out at the Sustained Spheromak Physics Experiment at LLNL, where EUV spectra of oxygen ions were recorded. The second set of experiments was performed at the compact laser-plasma x-ray/EUV facility 'Sparky' at UNR. In particular, Mylar and Teflon slabs were used as targets to produce carbon, oxygen, and fluorine ions of different ionization stages. Nonlocal thermodynamic equilibrium kinetic models of O, F, and C were applied to identify the most diagnostically important spectral features of low-Z ions between 40 to 300 A and to provide plasma parameters for both sets of experiments.

  10. Temperature and Extreme-ultraviolet Intensity in a Coronal Prominence Cavity and Streamer

    NASA Astrophysics Data System (ADS)

    Kucera, T. A.; Gibson, S. E.; Schmit, D. J.; Landi, E.; Tripathi, D.

    2012-09-01

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  11. Photoionized argon plasmas induced with intense soft x-ray and extreme ultraviolet pulses

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Wachulak, P.; Fok, T.; Węgrzyński, Ł.; Fiedorowicz, H.; Skrzeczanowski, W.; Pisarczyk, T.; Chodukowski, T.; Kalinowska, Z.; Dudzak, R.; Dostal, J.; Krousky, E.; Skala, J.; Ullschmied, J.; Hrebicek, J.; Medrik, T.

    2016-01-01

    In this work, photoionized plasmas were created by irradiation of gaseous argon with soft x-ray (SXR) and extreme ultraviolet (EUV) intense radiation pulses. Two different laser-produced plasma sources, employing a low energy Nd:YAG laser and a high energy iodine laser system (PALS), were used for creation of photoionized plasmas. In both cases the EUV or SXR beam irradiated the Ar stream, injected into a vacuum chamber synchronously with the radiation pulse. Emission spectra, measured for the Ar photoionized plasmas indicated strong differences in ionization degree for plasmas produced using low and high energy systems. In case of the the EUV driving pulses, emission lines corresponding to neutral atoms and singly charged ions were observed. In case of the SXR pulses utilized for the photoionized plasma creation, only Ar V–VIII emission lines were recorded. Additionally, electron density measurements were performed by laser interferometry employing a femtosecond laser system synchronized with the irradiating system. Maximum electron density for the Ar photoionized plasma, induced using the high energy system, reached 1.9 · 1018 cm‑3. Interferometric measurements performed for the moment of maximum intensity of the main laser pulse (t  =  0) revealed no fringe shift. Detection limit for the interferometric measurements was estimated. It allowed to estimate the upper limit for electron density at t  =  0 as 5 · 1016 cm‑3.

  12. The Extreme Ultraviolet Contributions to the Solar Irradiance Reference Spectrum (SIRS)

    NASA Astrophysics Data System (ADS)

    Chamberlin, P. C.; Woods, T. N.; Harder, J. W.; Hock, R. A.; Snow, M.

    2008-12-01

    The Whole Heliosphere Interval (WHI) was a coordinated effort with inputs from over 50 models and observatories, both satellite and ground based, to characterize the Sun and heliosphere during solar minimum conditions. The time period selected for this quiet Sun WHI campaign was April 10-16, 2008. One of the goals of the solar minimum WHI was to produce a definitive Solar Irradiance Reference Spectrum (SIRS) for quiet Sun conditions ranging in wavelength from 0.1 nm up to 2400 nm. During this WHI campaign on April 14, 2008, a sounding rocket was launched from White Sands Missile Range that observed the solar spectral irradiance in these solar minimum conditions in the extreme ultraviolet (EUV) wavelength range from 0.1-106 nm as well as the bright hydrogen Lyman alpha emission at 121.6 nm. The rocket observations from 6.0-106.0 nm and at 0.1 nm spectral resolution are the EUV input for the SIRS. These rocket EUV measurements are discussed following a brief introduction to the entire SIRS spectrum developed for the WHI campaign.

  13. Characterization of gas targets for laser produced extreme ultraviolet plasmas with a Hartmann-Shack sensor

    SciTech Connect

    Peth, Christian; Kranzusch, Sebastian; Mann, Klaus; Vioel, Wolfgang

    2004-10-01

    A table top extreme ultraviolet (EUV)-source was developed at Laser-Laboratorium Goettingen for the characterization of optical components and sensoric devices in the wavelength region from 11 to 13 nm. EUV radiation is generated by focusing the beam of a Q-switched Nd:YAG laser into a pulsed xenon gas jet. Since a directed gas jet with a high number density is needed for an optimal performance of the source, conical nozzles with different cone angles were drilled with an excimer laser to produce a supersonic gas jet. The influence of the nozzle geometry on the gas jet was characterized with a Hartmann-Shack wave front sensor. The deformation of a planar wave front after passing the gas jet was analyzed with this sensor, allowing a reconstruction of the gas density distribution. Thus, the gas jet was optimized resulting in an increase of EUV emission by a factor of two and a decrease of the plasma size at the same time.

  14. TEMPERATURE AND EXTREME-ULTRAVIOLET INTENSITY IN A CORONAL PROMINENCE CAVITY AND STREAMER

    SciTech Connect

    Kucera, T. A.; Tripathi, D.

    2012-09-20

    We analyze the temperature and EUV line emission of a coronal cavity and surrounding streamer in terms of a morphological forward model. We use a series of iron line ratios observed with the Hinode Extreme-ultraviolet Imaging Spectrograph (EIS) on 2007 August 9 to constrain temperature as a function of altitude in a morphological forward model of the streamer and cavity. We also compare model predictions to the EIS EUV line intensities and polarized brightness (pB) data from the Mauna Loa Solar Observatory (MLSO) Mark 4 K-coronameter. This work builds on earlier analysis using the same model to determine geometry of and density in the same cavity and streamer. The fit to the data with altitude-dependent temperature profiles indicates that both the streamer and cavity have temperatures in the range 1.4-1.7 MK. However, the cavity exhibits substantial substructure such that the altitude-dependent temperature profile is not sufficient to completely model conditions in the cavity. Coronal prominence cavities are structured by magnetism so clues to this structure are to be found in their plasma properties. These temperature substructures are likely related to structures in the cavity magnetic field. Furthermore, we find that the model overestimates the EUV line intensities by a factor of 4-10, without overestimating pB. We discuss this difference in terms of filling factors and uncertainties in density diagnostics and elemental abundances.

  15. Simulation of particle velocity in a laser-produced tin plasma extreme ultraviolet source

    SciTech Connect

    Masnavi, Majid; Nakajima, Mitsuo; Horioka, Kazuhiko; Araghy, Homaira Parchamy; Endo, Akira

    2011-06-15

    In connection with fast heating in a laser produced plasma (LPP) extreme ultraviolet (EUV) source, the superheating behavior of bulk tin (Sn) at high heating rates is investigated. A constant temperature and pressure molecular dynamics simulation using modified Lennard-Jones and Coulomb potentials suitable for studying the liquid structure of Sn is employed in order to derive the caloric curves of the solid and liquid phases. The results have shown transient effects on the phase transitions. Superheating is observed during the melting and vaporizing processes. The velocity distribution of Sn particles against typical laser fluence in a LPP EUV light source has been numerically investigated using a simplified method including a one-dimensional, two-temperature, molecular dynamics, and steady-state ionization model. In the framework of our model, it was found that ejected Sn particles have a maximum velocity on the order of 10 to 40 km/s in plasma created using a nanosecond pre-pulse neodymium-doped yttrium aluminum garnet (Nd:YAG, 1.06 {mu}m) laser in EUV lithography experiments.

  16. Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

    SciTech Connect

    Malinowski, Pawel E.; Mertens, Robert; Van Hoof, Chris; Duboz, Jean-Yves; Semond, Fabrice; Frayssinet, Eric; Verhoeve, Peter; Giordanengo, Boris; BenMoussa, Ali

    2011-04-04

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.

  17. Impact of a deformed extreme ultraviolet pellicle in terms of the critical dimension uniformity

    NASA Astrophysics Data System (ADS)

    Kim, In-Seon; Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

    2016-04-01

    The usage of an extreme ultraviolet (EUV) pellicle is regarded as a potential solution for defect control because it can protect the mask from airborne debris. However, some obstacles disrupt realistic application of the pellicle, such as its structural weakness, the risk of thermal damage, and so on. For these reasons, flawless fabrication of the pellicle is impossible. We discuss the influence of a deformed pellicle in terms of the nonuniform intensity distribution and the critical dimension (CD) uniformity. When we consider a 16-nm periodic pattern with dipole illumination, a transmission difference (max-min) of 0.7% causes CD uniformity of 0.1 nm. The deflection of the aerial image caused by gravity is small enough to ignore. CD uniformity is <0.1 nm, even for the current gap of 2 mm between the mask and pellicle. However, wrinkling of the EUV pellicle, caused by heat, can cause serious image distortion because a wrinkled EUV pellicle experiences both transmission loss variation as well as CD nonuniformity. The local angle of a wrinkle (as opposed to the period or amplitude of a wrinkle) is the main factor that influences CD uniformity, and a local angle of <˜16 deg is needed to achieve 0.1-nm CD uniformity for a 16-nm L/S pattern.

  18. Influence of laser pulse duration on extreme ultraviolet and ion emission features from tin plasmas

    SciTech Connect

    Roy, A. E-mail: aroy@barc.gov.in; Harilal, S. S.; Polek, M. P.; Hassan, S. M.; Hassanein, A.; Endo, A.

    2014-03-15

    We investigated the role of laser pulse duration and intensity on extreme ultraviolet (EUV) generation and ion emission from a laser produced Sn plasma. For producing plasmas, planar slabs of pure Sn were irradiated with 1064 nm Nd:YAG laser pulses with varying pulse duration (5–20 ns) and intensity. Experimental results performed at CMUXE indicate that the conversion efficiency (CE) of the EUV radiation strongly depend on laser pulse width and intensity, with a maximum CE of ∼2.0% measured for the shortest laser pulse width used (5 ns). Faraday Cup ion analysis of Sn plasma showed that the ion flux kinetic profiles are shifted to higher energy side with the reduction in laser pulse duration and narrower ion kinetic profiles are obtained for the longest pulse width used. However, our initial results showed that at a constant laser energy, the ion flux is more or less constant regardless of the excitation laser pulse width. The enhanced EUV emission obtained at shortest laser pulse duration studied is related to efficient laser-plasma reheating supported by presence of higher energy ions at these pulse durations.

  19. Imaging extreme ultraviolet spectrometer employing a single toroidal diffraction grating: the initial evaluation.

    PubMed

    Huber, M C; Timothy, J G; Morgan, J S; Lemaitre, G; Tondello, G; Jannitti, E; Scarin, P

    1988-08-15

    A high-efficiency extreme ultraviolet (EUV) imaging spectrometer has been constructed and tested. The spectrometer employs a concave toroidal grating illuminated at normal incidence in a Rowland circle mounting and has only one reflecting surface. The toroidal grating has been fabricated by a new technique employing an elastically deformable submaster grating which is replicated in a spherical form and then mechanically distorted to produce the desired aspect ratio of the toroidal surface for stigmatic imaging over the selected wavelength range. The fixed toroidal grating used in the spectrometer is then replicated from this surface. Photographic tests and initial photoelectric tests with a 2-D pulse-counting detector system have verified the image quality of the toroidal grating at wavelengths near 600 A. The results of these initial tests are described in detail, and the basic designs of two instruments which could employ the imaging spectrometer for astrophysical investigations in space are briefly described, namely, a high-resolution EUV spectroheliometer for studies of the solar chromosphere, transition region, and corona and an EUV spectroscopic telescope for studies of nonsolar objects. PMID:20539406

  20. CO2 laser drives extreme ultraviolet nano-lithography — second life of mature laser technology

    NASA Astrophysics Data System (ADS)

    Nowak, K. M.; Ohta, T.; Suganuma, T.; Fujimoto, J.; Mizoguchi, H.; Sumitani, A.; Endo, A.

    2013-12-01

    It was shown both theoretically and experimentally that nanosecond order laser pulses at 10.6 micron wavelength were superior for driving the Sn plasma extreme ultraviolet (EUV) source for nano-lithography for the reasons of higher conversion efficiency, lower production of debris and higher average power levels obtainable in CO2 media without serious problems of beam distortions and nonlinear effects occurring in competing solid-state lasers at high intensities. The renewed interest in such pulse format, wavelength, repetition rates in excess of 50 kHz and average power levels in excess of 18 kiloWatt has sparked new opportunities for a matured multi-kiloWatt CO2 laser technology. The power demand of EUV source could be only satisfied by a Master-Oscillator-Power-Amplifier system configuration, leading to a development of a new type of hybrid pulsed CO2 laser employing a whole spectrum of CO2 technology, such as fast flow systems and diffusion-cooled planar waveguide lasers, and relatively recent quantum cascade lasers. In this paper we review briefly the history of relevant pulsed CO2 laser technology and the requirements for multi-kiloWatt CO2 laser, intended for the laser-produced plasma EUV source, and present our recent advances, such as novel solid-state seeded master oscillator and efficient multi-pass amplifiers built on planar waveguide CO2 lasers.

  1. Wafer and reticle positioning system for the Extreme Ultraviolet Lithography Engineering Test Stand

    SciTech Connect

    WRONOSKY,JOHN B.; SMITH,TONY G.; CRAIG,MARCUS J.; STURGIS,BEVERLY R.; DARNOLD,JOEL R.; WERLING,DAVID K.; KINCY,MARK A.; TICHENOR,DANIEL A.; WILLIAMS,MARK E.; BISCHOFF,PAUL

    2000-01-27

    This paper is an overview of the wafer and reticle positioning system of the Extreme Ultraviolet Lithography (EUVL) Engineering Test Stand (ETS). EUVL represents one of the most promising technologies for supporting the integrated circuit (IC) industry's lithography needs for critical features below 100nm. EUVL research and development includes development of capabilities for demonstrating key EUV technologies. The ETS is under development at the EUV Virtual National Laboratory, to demonstrate EUV full-field imaging and provide data that supports production-tool development. The stages and their associated metrology operated in a vacuum environment and must meet stringent outgassing specifications. A tight tolerance is placed on the stage tracking performance to minimize image distortion and provide high position repeatability. The wafer must track the reticle with less than {+-}3nm of position error and jitter must not exceed 10nm rms. To meet these performance requirements, magnetically levitated positioning stages utilizing a system of sophisticated control electronics will be used. System modeling and experimentation have contributed to the development of the positioning system and results indicate that desired ETS performance is achievable.

  2. Extreme ultraviolet light sources for use in semiconductor lithography—state of the art and future development

    NASA Astrophysics Data System (ADS)

    Stamm, Uwe

    2004-12-01

    This paper gives an overview of the development status and plans of extreme ultraviolet (EUV) light sources at XTREME technologies, a joint venture of Lambda Physik AG, Göttingen and JENOPTIK LOS GmbH, Jena, Germany. Results for gas discharge-produced plasma (GDPP) and laser-produced plasma (LPP), the two major technologies in EUV sources, are presented. The GDPP EUV sources use the Z-pinch principle with efficient sliding-discharge pre-ionization. First prototypes of commercial gas discharge sources with an EUV power of 35 W in 2π sr have already been integrated into EUV microsteppers. These sources are equipped with a debris-filter which supports an optics lifetime exceeding 100 million pulses at 1 kHz repetition rate. The same lifetime was achieved for the components of the discharge system itself. The progress in the development of high-power discharge sources based on xenon resulted in an EUV power of 200 W into a 2π sr solid angle, in continuous operation, at 4.5 kHz repetition rate, by implementation of porous-metal cooling technology. The available intermediate focus (IF) power is 22 W taking into account experimentally verified losses in a 1.8 sr source collector module. The usable IF power depends on the etendue of the optical system of the EUV scanner. For the current size of the EUV emitting plasma the etendue acceptance factor may be below 0.5. The currently usable IF power with 1.8 sr collector mirror may therefore be about 10 W. Z-pinch discharge sources with Sn as the emitter have been developed as a more efficient alternative to xenon fuelled sources. Tin sources showed a conversion efficiency (CE) that was double that of xenon. EUV power of 400 W in 2π sr has been generated at only 4.5 kHz repetition rate. The available IF power is 44 W. Estimates evaluating the tin source performance reveal the potential for achieving high-volume manufacturing (HVM) power specification by using existing technology. Because of their small plasma size and the

  3. The Influence of the Extreme Ultraviolet Spectral Energy Distribution on the Structure and Composition of the Upper Atmosphere of Exoplanets

    NASA Astrophysics Data System (ADS)

    Guo, J. H.; Ben-Jaffel, Lotfi

    2016-02-01

    By varying the profiles of stellar extreme ultraviolet (EUV) spectral energy distributions (SEDs), we tested the influences of stellar EUV SEDs on the physical and chemical properties of an escaping atmosphere. We apply our model to study four exoplanets: HD 189733b, HD 209458b, GJ 436b, and Kepler-11b. We find that the total mass loss rates of an exoplanet, which are determined mainly by the integrated fluxes, are moderately affected by the profiles of the EUV SED, but the composition and species distributions in the atmosphere can be dramatically modified by the different profiles of the EUV SED. For exoplanets with a high hydrodynamic escape parameter (λ), the amount of atomic hydrogen produced by photoionization at different altitudes can vary by one to two orders of magnitude with the variation of stellar EUV SEDs. The effect of photoionization of H is prominent when the EUV SED is dominated by the low-energy spectral region (400-900 Å), which pushes the transition of H/H+ to low altitudes. In contrast, the transition of H/H+ moves to higher altitudes when most photons are concentrated in the high-energy spectral region (50-400 Å). For exoplanets with a low λ, the lower temperatures of the atmosphere make many chemical reactions so important that photoionization alone can no longer determine the composition of the escaping atmosphere. For HD 189733b, it is possible to explain the time variability of Lyα between 2010 and 2011 by a change in the EUV SED of the host K-type star, yet invoking only thermal H i in the atmosphere.

  4. Impurity Monitoring on NSTX-U with Three New Extreme Ultraviolet Spectrometers

    NASA Astrophysics Data System (ADS)

    Weller, M. E.; Beiersdorfer, P.; Soukhanovskii, V. A.; Magee, E. W.; Rognlien, T. D.; Stratton, B. C.

    2015-11-01

    The National Spherical Torus Experiment - Upgrade (NSTX-U) is a significant advancement from NSTX offering increased toroidal field, plasma current, and neutral beam injector input power. Due to these improvements generating more intense plasma conditions, impurities penetrating into the core could also be enhanced, despite efforts to improve wall conditioning (bake out, boronization, and lithium evaporation). To monitor and study these impurities, three extreme ultraviolet (EUV) spectrometers have been implemented on NSTX-U. All three are flat field grazing incident spectrometers capable of capturing time-resolved data to about 5.0 ms. Two of the spectrometers, the X-ray and Extreme Ultraviolet Spectrometer (XEUS, 5 - 65 Å) the Long-Wavelength and Extreme Ultraviolet Spectrometer (LoWEUS, 190 - 440 Å) were previously implemented on NSTX. The third has been dubbed the Metal Monitor and Lithium Spectrometer Assembly (MonaLisa, 50 - 220 Å). A new laser blow-off (LBO) system has also been developed in conjuncture with the spectrometers to introduce low and high-Z elements to study core impurity transport. The three spectrometers, along with the new LBO system, provide a unique opportunity to attain highly resolved spectra of impurities from 5 - 440 Å with time-resolution. This work was performed under the auspices of the US Department of Energy under DE-AC52-07NA27344 and DE-AC02- 09CH11466.

  5. EUVE photometric observations of the Moon

    NASA Astrophysics Data System (ADS)

    Gladstone, G. R.; McDonald, J. S.; Boyd, W. T.; Bowyer, S.

    1994-03-01

    During its all-sky survey, the Extreme Ultraviolet Explorer (EUVE) satellite observed the Moon several times at first and last quarters, and once immediately following the Dec. 10 1992 lunar eclipse. We present here a portion of this data, in the form of extreme-ultraviolet (EUV) images of the Moon and derived geometric albedos. From the EUVE photometer data we obtain average geometric albedos of 0.15% (+/- 0.03%), 3.1% (+/- 0.3%), and 3.5% (+/- 0.3%), over wavelength intervals of 150-240 A, 400-580 A, and 550-650 A, respectively. An upper limit geometric albedo of 0.13% is obtained for the wavelength interval 75-180 A. Also, using previously published ROSAT data, we estimate a lunar geometric albedo of 0.014% (+/- 0.002%) over the wavelength interval 50-80 A. These EUV albedos (and previously published far-ultraviolet albedos) are well fit by the scaled reflectivities of SiO2 and Al2O3. Over the wavelength ranges of the EUVE photometers, the observed brightness of the Moon seems to be largely consistent with reflected sunlight rather than X-ray fluorescence. Since the L- and M-shell fluorescence signal is expected to be carried by only small number of emission lines, however, it will require EUV observations of higher spectral resolution (approximately less than 5 A) to determine their exact contribution, if any, to the lunar EUV spectrum.

  6. STEREO's Extreme UltraViolet Imager (EUVI)

    NASA Technical Reports Server (NTRS)

    2007-01-01

    At a pixel resolution of 2048x2048, the STEREO EUVI instrument provides views of the Sun in ultraviolet light that rivals the full-disk views of SOHO/EIT. This image is through the 171 Angstrom (ultraviolet) filter which is characteristic of iron ions (missing eight and nine electrons) at 1 million degrees. There is a short data gap in the latter half of the movie that creates a freeze and then jump in the data view. This is a movie of the Sun in 171 Angstrom ultraviolet light. The time frame is late January, 2007

  7. Extending the path for efficient extreme ultraviolet sources for advanced nanolithography

    SciTech Connect

    Sizyuk, Tatyana; Hassanein, Ahmed

    2015-09-15

    Developing efficient light sources for extreme ultraviolet (EUV) lithography is one of the most important problems of high volume manufacturing (HVM) of the next generation computer chips. Critical components of this technology are continued to face challenges in the demanding performance for HVM. Current investigations of EUV and beyond EUV (BEUV) community are focused on the dual-pulse laser produced plasma (LPP) using droplets of mass-limited targets. Two main objectives as well as challenges in the optimization of these light sources are related to enhancement of the conversion efficiency (CE) of the source and increase components lifetime of the collector optical system. These require significant experimental and computer simulation efforts. These requirements call for fine detail analysis of various plasma physics processes involved in laser target interactions and their effects on source optimization. We continued to enhance our comprehensive HEIGHTS simulation package and upgrade our CMUXE laboratories to study and optimize the efficiency of LPP sources. Integrated modeling and experimental research were done to both benchmark simulation results and to make projections and realistic predictions of the development path for powerful EUVL devices for HVM requirements. We continued the detail analysis of dual-pulse laser systems using various laser wavelengths and delay times between the two pulses. We showed that the efficiency of EUV sources can be improved utilizing the higher harmonics of Nd:YAG laser for the prepulse and the first harmonics for the main pulse, while still having lower efficiency than the combination involving CO{sub 2} laser in the range of parameters studied in this case. The differences in optimization process as well as in the source characteristics for two combinations of laser wavelengths were analyzed based on details of atomic and hydrodynamics processes during the evolving plasma plumes.

  8. EVIDENCE FOR THE WAVE NATURE OF AN EXTREME ULTRAVIOLET WAVE OBSERVED BY THE ATMOSPHERIC IMAGING ASSEMBLY ON BOARD THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect

    Shen Yuandeng; Liu Yu

    2012-07-20

    Extreme-ultraviolet (EUV) waves have been found for about 15 years. However, significant controversy remains over their physical natures and origins. In this paper, we report an EUV wave that was accompanied by an X1.9 flare and a partial halo coronal mass ejection (CME). Using high temporal and spatial resolution observations taken by the Solar Dynamics Observatory and the Solar-TErrestrial RElations Observatory, we are able to investigate the detailed kinematics of the EUV wave. We find several arguments that support the fast-mode wave scenario. (1) The speed of the EUV wave (570 km s{sup -1}) is higher than the sound speed of the quiet-Sun corona. (2) Significant deceleration of the EUV wave (-130 m s{sup -2}) is found during its propagation. (3) The EUV wave resulted in the oscillations of a loop and a filament along its propagation path, and a reflected wave from the polar coronal hole is also detected. (4) Refraction or reflection effect is observed when the EUV wave was passing through two coronal bright points. (5) The dimming region behind the wavefront stopped to expand when the wavefront started to become diffuse. (6) The profiles of the wavefront exhibited a dispersive nature, and the magnetosonic Mach number of the EUV wave derived from the highest intensity jump is about 1.4. In addition, triangulation indicates that the EUV wave propagated within a height range of about 60-100 Mm above the photosphere. We propose that the EUV wave observed should be a nonlinear fast-mode magnetosonic wave that propagated freely in the corona after it was driven by the CME expanding flanks during the initial period.

  9. Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Nikolsky, Peter; Strolenberg, Chris; Nielsen, Rasmus; Nooitgedacht, Tjitte; Davydova, Natalia; Yang, Greg; Lee, Shawn; Park, Chang-Min; Kim, Insung; Yeo, Jeong-Ho

    2013-04-01

    As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of

  10. Honing the accuracy of extreme-ultraviolet optical system testing: at-wavelength and visible-light measurements of the ETS Set-2 projection optic

    NASA Astrophysics Data System (ADS)

    Goldberg, Kenneth A.; Naulleau, Patrick P.; Bokor, Jeffrey; Chapman, Henry N.

    2002-07-01

    As the quality of optical systems for extreme ultraviolet lithography improves, high-accuracy wavefront metrology for alignment and qualification becomes ever more important. To enable the development of diffraction-limited EUV projection optics, visible-light and EUV interferometries must work in close collaboration. We present a detailed comparison of EUV and visible-light wavefront measurements performed across the field of view of a lithographic-quality EUV projection optical system designed for use in the Engineering Test Stand developed by the Virtual National Laboratory and the EUV Limited Liability Company. The comparisons reveal that the present level of RMS agreement lies in the 0.3-0.4-nm range. Astigmatism is the most significant aberration component for the alignment of this optical system; it is also the dominant term in the discrepancy, and the aberration with the highest measurement uncertainty. With EUV optical systems requiring total wavefront quality in the (lambda) EUV/50 range, and even higher surface-figure quality for the individual mirror elements, improved accuracy through future comparisons, and additional studies, are required.

  11. A study of extreme-ultraviolet emission from cataclysmic variables

    NASA Technical Reports Server (NTRS)

    Polidan, Ronald S.; Mauche, Christopher W.; Wade, Richard A.

    1990-01-01

    Voyager far- and extreme UV spectrophotometric observations of five cataclysmic variables (the dwarf novae SS Cyg and VW Hyi and the novalike variables V3885 Sgr, RW Sex, and IX Vel) are combined with neutral hydrogen column densities derived from the curve-of-growth analysis of interstellar absorption lines in high-resolution IUE spectra to place upper limits on the emitted flux in the 600-700 A EUV band. The Voyager observations of VW Hyi were obtained during both normal and superoutbursts. Detailed accretion disk model calculations show that most of the 600-700 A flux in these systems should originate in the inner accretion disk rather than in the boundary layer. For VW Hyi, the low neutral hydrogen column and excellent Voyager superoutburst data place the observed upper limit to the 600-700 A flux well below the expected EUV flux from the model calculations.

  12. Extreme Ultraviolet Lithography - Reflective Mask Technology

    SciTech Connect

    Walton, C.C.; Kearney, P.A.; Mirkarimi, P.B.; Bowers, J.M.; Cerjan, C.; Warrick, A.L.; Wilhelmsen, K.; Fought, E.; Moore, C.; Larson, C.; Baker, S.; Burkhart, S.C.; Hector, S.D.

    2000-05-09

    EUVL mask blanks consist of a distributed Bragg reflector made of 6.7nm-pitch bi-layers of MO and Si deposited upon a precision Si or glass substrate. The layer deposition process has been optimized for low defects, by application of a vendor-supplied but highly modified ion-beam sputter deposition system. This system is fully automated using SMIF technology to obtain the lowest possible environmental- and handling-added defect levels. Originally designed to coat 150mm substrates, it was upgraded in July, 1999 to 200 mm and has coated runs of over 50 substrates at a time with median added defects >100nm below 0.05/cm{sup 2}. These improvements have resulted from a number of ion-beam sputter deposition system modifications, upgrades, and operational changes, which will be discussed. Success in defect reduction is highly dependent upon defect detection, characterization, and cross-platform positional registration. We have made significant progress in adapting and extending commercial tools to this purpose, and have identified the surface scanner detection limits for different defect classes, and the signatures of false counts and non-printable scattering anomalies on the mask blank. We will present key results and how they have helped reduce added defects. The physics of defect reduction and mitigation is being investigated by a program on multilayer growth over deliberately placed perturbations (defects) of varying size. This program includes modeling of multilayer growth and modeling of defect printability. We developed a technique for depositing uniformly sized gold spheres on EUVL substrates, and have studied the suppression of the perturbations during multilayer growth under varying conditions. This work is key to determining the lower limit of critical defect size for EUV Lithography. We present key aspects of this work. We will summarize progress in all aspects of EUVL mask blank development, and present detailed results on defect reduction and mask blank

  13. Extreme ultra-violet burst, particle heating, and whistler wave emission in fast magnetic reconnection induced by kink-driven Rayleigh-Taylor instability

    NASA Astrophysics Data System (ADS)

    Chai, Kil-Byoung; Zhai, Xiang; Bellan, Paul M.

    2016-03-01

    A spatially localized energetic extreme ultra-violet (EUV) burst is imaged at the presumed position of fast magnetic reconnection in a plasma jet produced by a coaxial helicity injection source; this EUV burst indicates strong localized electron heating. A circularly polarized high frequency magnetic field perturbation is simultaneously observed at some distance from the reconnection region indicating that the reconnection emits whistler waves and that Hall dynamics likely governs the reconnection. Spectroscopic measurement shows simultaneous fast ion heating. The electron heating is consistent with Ohmic dissipation, while the ion heating is consistent with ion trajectories becoming stochastic.

  14. Efficient 13.5 nm extreme ultraviolet emission from Sn plasma irradiated by a long CO{sub 2} laser pulse

    SciTech Connect

    Tao, Y.; Tillack, M. S.; Sequoia, K. L.; Burdt, R. A.; Yuspeh, S.; Najmabadi, F.

    2008-06-23

    The effect of pulse duration on in-band (2% bandwidth) conversion efficiency (CE) from a CO{sub 2} laser to 13.5 nm extreme ultraviolet (EUV) light was investigated for Sn plasma. It was found that high in-band CE, 2.6%, is consistently obtained using a CO{sub 2} laser with pulse durations from 25 to 110 ns. Employing a long pulse, for example, 110 ns, in a CO{sub 2} laser system used in an EUV lithography source could make the system significantly more efficient, simpler, and cheaper as compared to that using a short pulse of 25 ns or shorter.

  15. CVD silicon carbide mirrors for EUV applications

    NASA Astrophysics Data System (ADS)

    Keski-Kuha, Ritva A.; Osantowski, John F.; Leviton, Douglas B.; Saha, Timo T.; Wright, Geraldine A.; Boucarut, Rene A.; Fleetwood, Charles M.; Madison, Timothy J.

    1995-10-01

    Advances in optical coating and materials technology have made possible the development of instruments with substantially improved efficiency in the extreme ultraviolet (EUV). For example, the development of chemical vapor deposited (CVD) SiC mirrors provides an opportunity to extend the range of normal incidence instruments down to 60 nm. CVD-SiC is a highly polishable material yielding low scatter surfaces. High UV reflectivity and desirable mechanical and thermal properties make CVD-SiC an attractive mirror and/or coating material for EUV applications. The EUV performance of SiC mirrors as well as some strengths and problem areas are discussed.

  16. Carbon contamination topography analysis of EUV masks

    SciTech Connect

    Fan, Y.-J.; Yankulin, L.; Thomas, P.; Mbanaso, C.; Antohe, A.; Garg, R.; Wang, Y.; Murray, T.; Wuest, A.; Goodwin, F.; Huh, S.; Cordes, A.; Naulleau, P.; Goldberg, K. A.; Mochi, I.; Gullikson, E.; Denbeaux, G.

    2010-03-12

    The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance. Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. However, contamination on patterned EUV masks can cause additional effects on absorbing features and the printed images, as well as impacting the efficiency of cleaning process. In this work, several different techniques were used to determine possible contamination topography. Lithographic simulations were also performed and the results compared with the experimental data.

  17. DIFFRACTION, REFRACTION, AND REFLECTION OF AN EXTREME-ULTRAVIOLET WAVE OBSERVED DURING ITS INTERACTIONS WITH REMOTE ACTIVE REGIONS

    SciTech Connect

    Shen Yuandeng; Liu Yu; Zhao Ruijuan; Tian Zhanjun; Su Jiangtao; Li Hui; Ichimoto, Kiyoshi; Shibata, Kazunari

    2013-08-20

    We present observations of the diffraction, refraction, and reflection of a global extreme-ultraviolet (EUV) wave propagating in the solar corona. These intriguing phenomena are observed when the wave interacts with two remote active regions, and together they exhibit properties of an EUV wave. When the wave approached AR11465, it became weaker and finally disappeared in the active region, but a few minutes later a new wavefront appeared behind the active region, and it was not concentric with the incoming wave. In addition, a reflected wave was also simultaneously observed on the wave incoming side. When the wave approached AR11459, it transmitted through the active region directly and without reflection. The formation of the new wavefront and the transmission could be explained with diffraction and refraction effects, respectively. We propose that the different behaviors observed during the interactions may be caused by different speed gradients at the boundaries of the two active regions. We find that the EUV wave formed ahead of a group of expanding loops a few minutes after the start of the loops' expansion, which represents the initiation of the associated coronal mass ejection (CME). Based on these results, we conclude that the EUV wave should be a nonlinear magnetosonic wave or shock driven by the associated CME, which propagated faster than the ambient fast mode speed and gradually slowed down to an ordinary linear wave. Our observations support the hybrid model that includes both fast wave and slow non-wave components.

  18. The extreme ultraviolet imager of solar orbiter: optical design and alignment scheme

    NASA Astrophysics Data System (ADS)

    Halain, J.-P.; Mazzoli, A.; Meining, S.; Rochus, P.; Renotte, E.; Auchère, F.; Schühle, U.; Delmotte, F.; Dumesnil, C.; Philippon, A.; Mercier, R.; Hermans, A.

    2015-09-01

    The Extreme Ultraviolet Imager (EUI) is one of the remote sensing instruments on-board the Solar Orbiter mission. It will provide dual-band full-Sun images of the solar corona in the extreme ultraviolet (17.1 nm and 30.4 nm), and high resolution images of the solar disk in both extreme ultraviolet (17.1 nm) and vacuum ultraviolet (Lyman-alpha 121.6 nm). The EUI optical design takes heritage of previous similar instruments. The Full Sun Imager (FSI) channel is a single mirror Herschel design telescope. The two High Resolution Imager (HRI) channels are based on a two-mirror optical refractive scheme, one Ritchey-Chretien and one Gregory optical design for the EUV and the Lyman-alpha channels, respectively. The spectral performances of the EUI channels are obtained thanks to dedicated mirror multilayer coatings and specific band-pass filters. The FSI channel uses a dual-band mirror coating combined with aluminum and zirconium band-pass filters. The HRI channels use optimized band-pass selection mirror coatings combined with aluminum band-pass filters and narrow band interference filters for Lyman-alpha. The optical performances result from accurate mirror manufacturing tolerances and from a two-step alignment procedure. The primary mirrors are first co-aligned. The HRI secondary mirrors and focal planes positions are then adjusted to have an optimum interferometric cavity in each of these two channels. For that purpose a dedicated alignment test setup has been prepared, composed of a dummy focal plane assembly representing the detector position. Before the alignment on the flight optical bench, the overall alignment method has been validated on the Structural and Thermal Model, on a dummy bench using flight spare optics, then on the Qualification Model to be used for the system verification test and qualifications.

  19. Three-dimensional extreme ultraviolet emission from a droplet-based laser-produced plasma

    SciTech Connect

    Giovannini, A. Z.; Abhari, Reza S.

    2013-07-21

    The emission of extreme ultraviolet radiation in a 2% bandwidth centered at 13.5 nm (in-band) is measured in one hemisphere. The targets of the laser are tin droplets. In-band emission is measured at angles from the laser axis larger than 120 Degree-Sign . Analytical models representing the physical processes are developed and calibrated with the experimental data. In the models two assumptions are investigated, isentropic and isothermal 2D-axisymmetric expansion. The parameters of the models are the density distribution of the plasma and the location where the EUV emission is centered. The parameters are inferred by the calibration of the models with the experimental data. The predictions of the models are validated with experiments where slab targets were used.

  20. The diffuse extreme-ultraviolet background - Constraints on hot coronal plasma

    NASA Technical Reports Server (NTRS)

    Paresce, F.; Stern, R.

    1981-01-01

    The Apollo-Soyuz data and data reported by Cash et al. (1976) have been reanalyzed in terms of both isothermal models and temperature distribution models. In the latter case, a power-law form is assumed for the relation between emission measure and temperature. A new upper limit on diffuse flux in the 20-73 eV band derived from Apollo-Soyuz observations made in the earth's shadow has been incorporated in the calculation. In the considered investigation the results of the new analysis are presented and the implications for the physical properties of the hot component of the interstellar medium are discussed. The analysis of the Berkeley extreme ultraviolet (EUV) diffuse background measurements using either isothermal or power law temperature distribution models for the emitting plasma indicates excellent qualitative agreement with hard X-ray data that suggest the sun to be immersed in a hot plasma that pervades most of space out to approximately 100 pc.

  1. Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2014-03-01

    The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.

  2. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources

    DOEpatents

    Kublak, G.D.; Richardson, M.C.

    1996-11-19

    Method and apparatus for producing extreme ultraviolet (EUV) and soft x-ray radiation from an ultra-low debris plasma source are disclosed. Targets are produced by the free jet expansion of various gases through a temperature controlled nozzle to form molecular clusters. These target clusters are subsequently irradiated with commercially available lasers of moderate intensity (10{sup 11}--10{sup 12} watts/cm{sup 2}) to produce a plasma radiating in the region of 0.5 to 100 nanometers. By appropriate adjustment of the experimental conditions the laser focus can be moved 10--30 mm from the nozzle thereby eliminating debris produced by plasma erosion of the nozzle. 5 figs.

  3. Laboratory calibration of density-dependent lines in the extreme ultraviolet spectral region

    SciTech Connect

    Lepson, J. K.; Beiersdorfer, P.; Gu, M. F.; Desai, P.; Bitter, M.; Roquemore, L.; Reinke, M. L.

    2012-05-25

    We have been making spectral measurements in the extreme ultraviolet (EUV) from different laboratory sources in order to investigate the electron density dependence of various astrophysically important emission lines and to test the atomic models underlying the diagnostic line ratios. The measurement are being performed at the Livermore EBIT-I electron beam ion trap, the National Spherical Torus Experiment (NSTX) at Princeton, and the Alcator C-Mod tokamak at the Massachusetts Institute of Technology, which together span an electron density of four orders of magnitude and which allow us to test the various models at high and low density limits. Here we present measurements of Fe XXII and Ar XIV, which include new data from an ultra high resolution ({lambda}/{Delta}{lambda} >4000) spectrometer at the EBIT-I facility. We found good agreement between the measurements and modeling calculations for Fe XXII, but poorer agreement for Ar XIV.

  4. Latest results from the SEMATECH Berkeley extreme ultraviolet microfield exposure tool

    SciTech Connect

    Naulleau, Patrick; Anderson, Christopher N.; Chiu, Jerrin; Dean, Kim; Denham, Paul; George, Simi; Goldberg, Kenneth A.; Hoef, Brian; Jones, Gideon; Koh, Chawon; La Fontaine, Bruno; Ma, Andy; Montgomery, Warren; Niakoula, Dimitra; Park, Joo-On; Wallow, Tom; Wurm, Stefan

    2008-09-02

    Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. One of these tools is the 0.3 numerical aperture SEMATECH Berkeley MET operating as a resist and mask test center. Here they present an update on the tool summarizing some of the latest test and characterization results. they provide an update on the long-term aberration stability of the tool and present line-space imaging in chemically amplified photoresist down to the 20-nm half-pitch level. Although resist development has shown substantial progress in the area of resolution, line-edge-roughness (LER) remains a significant concern. Here we present a summary of recent LER performance results and consider the effect of mask contributors to the LER observed from the SEMATECH Berkeley microfield tool.

  5. Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography

    SciTech Connect

    Naulleau, Patrick

    2009-05-25

    As critical dimensions for leading-edge semiconductor devices shrink, line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.

  6. Efficient extreme ultraviolet plasma source generated by a CO2 laser and a liquid xenon microjet target

    NASA Astrophysics Data System (ADS)

    Ueno, Yoshifumi; Ariga, Tatsuya; Soumagne, George; Higashiguchi, Takeshi; Kubodera, Shoichi; Pogorelsky, Igor; Pavlishin, Igor; Stolyarov, Daniil; Babzien, Marcus; Kusche, Karl; Yakimenko, Vitaly

    2007-05-01

    We demonstrated efficacy of a CO2-laser-produced xenon plasma in the extreme ultraviolet (EUV) spectral region at 13.5nm at variable laser pulse widths between 200ps and 25ns. The plasma target was a 30μm liquid xenon microjet. To ensure the optimum coupling of CO2 laser energy with the plasma, they applied a prepulse yttrium aluminum garnet laser. The authors measured the conversion efficiency (CE) of the 13.5nm EUV emission for different pulse widths of the CO2 laser. A maximum CE of 0.6% was obtained for a CO2 laser pulse width of 25ns at an intensity of 5×1010W/cm2.

  7. Efficient high-order diffraction of extreme-ultraviolet light and soft x-rays by nanostructured volume gratings.

    PubMed

    Hambach, D; Schneider, G; Gullikson, E M

    2001-08-01

    We report what is believed to be the first demonstration that volume gratings diffract extreme-ultraviolet light (EUV) or soft x-rays into high orders approximately an order of magnitude more efficiently than predicted by classical thin-grating theory. At the 13-nm wavelength, copolymer grating structures with 200-nm period and aspect ratios of ~10:1 achieved diffraction efficiencies of 11.2%, 15.3%, 11.5%, and 9.1% in the orders m of 2, 3, 4, and 5, respectively. In addition, the measured transmission spectra are consistent with electrodynamic calculations by coupled-wave theory. High-order diffraction can now be employed for substantially improved diffractive EUV and x-ray optics, e.g., highly resolving diffractive lenses and large-aperture condensers. PMID:18049562

  8. Optimization of the size ratio of Sn sphere and laser focal spot for an extreme ultraviolet light source

    SciTech Connect

    Yuspeh, S.; Sequoia, K. L.; Tao, Y.; Tillack, M. S.; Burdt, R.; Najmabadi, F.

    2008-12-01

    The effect of the ratio of Sn sphere diameter to laser focal spot size (SD/FSS) on conversion efficiency (CE) from laser to in-band (2%) 13.5 nm extreme ultraviolet (EUV) light was investigated by fixing the laser spot size and irradiating variable diameter spheres. It was found that a minimum SD/FSS, i.e., 2.5, is necessary to produce high in-band CE, which is 15% higher than planar targets. Two-dimensional plasma density profile maps showed that the density of the dominant in-band EUV emission region and the size of the surrounding absorbing plasma can be manipulated by geometric effects of the SD/FSS ratio.

  9. Sub-diffraction-limited multilayer coatings for the 0.3-NA Micro-Exposure Tool for extreme ultraviolet lithography

    SciTech Connect

    Soufli, R; Hudyma, R M; Spiller, E; Gullikson, E M; Schmidt, M A; Robinson, J C; Baker, S L; Walton, C C; Taylor, J S

    2007-01-03

    This manuscript discusses the multilayer coating results for the primary and secondary mirrors of the Micro Exposure Tool (MET): a 0.30-numerical aperture (NA) lithographic imaging system with 200 x 600 {micro}m{sup 2} field of view at the wafer plane, operating in the extreme ultraviolet (EUV) wavelength region. Mo/Si multilayers were deposited by DC-magnetron sputtering on large-area, curved MET camera substrates, and a velocity modulation technique was implemented to consistently achieve multilayer thickness profiles with added figure errors below 0.1 nm rms to achieve sub-diffraction-limited performance. This work represents the first experimental demonstration of sub-diffraction-limited multilayer coatings for high-NA EUV imaging systems.

  10. Low-cost method for producing extreme ultraviolet lithography optics

    DOEpatents

    Folta, James A.; Montcalm, Claude; Taylor, John S.; Spiller, Eberhard A.

    2003-11-21

    Spherical and non-spherical optical elements produced by standard optical figuring and polishing techniques are extremely expensive. Such surfaces can be cheaply produced by diamond turning; however, the roughness in the diamond turned surface prevent their use for EUV lithography. These ripples are smoothed with a coating of polyimide before applying a 60 period Mo/Si multilayer to reflect a wavelength of 134 .ANG. and have obtained peak reflectivities close to 63%. The savings in cost are about a factor of 100.

  11. Voyager EUV and FUV observations

    SciTech Connect

    Holberg, J.B.

    1984-11-01

    The Voyager 1 and 2 ultraviolet spectrometers are sensitive over the wavelength range 500 to 1700 A. In the extreme ultraviolet (EUV), at wavelengths shortward of the Lyman limit (912 A), Voyager observations detected emission from three out of a sample of 11 nearly hot DA white dwarfs. These observations imply very low HI column densities in the directions of the three stars detected. In the far ultraviolet (FUV), at wavelengths between 912 and 1200 A, Voyager observations of O and B stars can be used to study interstellar reddening at the shortest wavelengths and to provide useful estimates of interstellar H2 column densities.

  12. True covariance simulation of the EUVE (extreme ultra violet explorer) update filter

    NASA Technical Reports Server (NTRS)

    Bar-Itzhack, I. Y.; Harman, R. R.

    1990-01-01

    This paper presents a covariance analysis of the performance and sensitivity of the attitude determination Extended Kalman Filter (EKF) used by the onboard computer (OBC) of the Extreme Ultra Violet Explorer (EUVE) spacecraft. The linearized dynamics and measurement equations of the error states are used in formulating the 'truth model' describing the order of the systems involved. The 'design model' used by the OBC EKF is then obtained by reducing the order of the truth model. The covariance matrix of the EKF which uses the reduced order model is not the correct covariance of the EKF estimation error. A 'true covariance analysis' has to be carried out in order to evaluate the correct accuracy of the OBC generated estimates. The results of such analysis are presented which indicate both the performance and the sensitivity of the OBC EKF.

  13. Extreme ultraviolet photoresists: Film quantum yields and LER of thin film resists

    NASA Astrophysics Data System (ADS)

    Higgins, Craig

    Extreme ultraviolet (EUV) is the leading candidate for a commercially viable solution for next generation lithography. The development of EUV chemically amplified photoresists and processes are critical to the future lithographic requirements of the microelectronics industry. To meet the necessary requirements for both integrated circuit (IC) specifications and cost, the resolution, line-edge roughness (LER) and sensitivity all need to be reduced. Unfortunately, a fundamental trade-off has been observed between these three crucial elements. We have predicted that the best way to obtain the required resolution, line-edge roughness and sensitivity (RLS) is to create more acid molecules per photon absorbed. This quantity is referred to as the film quantum yield (FQY). Utilizing increased photoacid generator (PAG) concentrations, the impact of FQY on the overall resist lithographic performance is characterized. However, despite significant improvements in RLS performance, LER continues to fall significantly short of industry requirements. Lithographic exposures have shown that LER increases significantly as film thickness decreases (< 50 nm) for 193 nm and EUV wavelengths. LER degradation is a significant problem for future technology nodes where film thicknesses of 50 nm or less will be necessary to help mitigate pattern collapse. Understanding the mechanistic cause of the thickness dependent LER degradation is therefore very critical for future needs of the lithographic community. Investigations highlight key concerns related to the image degradation of ultra-thin film photoresists (< 50 nm) with the aim of better understanding the correlation between resist LER, acid diffusion and glass transition temperature. Meeting the required LER will become increasingly difficult for future technology nodes due to thin film effects. Therefore, alternative processes and LER mitigation techniques are likely required for the implementation of EUV. Studies have demonstrated that

  14. Using extreme ultraviolet images and total electron content to study the Earth's plasmasphere

    NASA Astrophysics Data System (ADS)

    Galvan, David Andrew

    This dissertation employs extreme ultraviolet (EUV) imaging and total electron content (TEC) measurements to study the spatial structure and temporal variability of the Earth's plasmasphere. Photometry of global EUV images yields estimates of diurnal variation in column integrated He + density, as well as the deviation of the plasmasphere's motion from strict corotation. Case-study comparisons of EUV imagery with simultaneous TEC measurements derived from GPS radio signals yield radial profiles of electron and He + column abundance along the same lines of sight. Three-dimensional tomographic reconstructions of plasmaspheric electron density using TEC measurements are performed for the first time, and we evaluate the promise and limitations of TEC tomography for 3D imaging of the plasmasphere. We find that He + column abundance along a plasmaspheric flux tube tends to rise in the morning sector, stagnate around local noon, then rise again in the afternoon sector until ~ 20 MLT, where it peaks at a value 1.5 to 2 times the value at dawn. The mean rotation rate of the plasmasphere is observed to be between 88% and 95% of strict corotation, depending on L-shell, and can be highly variable even at L-shells as low as 2.5. Weak but significant correlations between rotation rate and indices of geomagnetic and auroral activity suggest multiple causes of this variability in rotation, including ionospheric winds and magnetospheric convection. Radial profiles of the column abundance of electrons and He + suggest that electrons fall off more quickly than He + at low L, leading to an increasing relative proportion of He + near L=2.5. Three-dimensional tomography of the plasmasphere is limited by satellite orbit geometry and lack of vertical resolution, but data assimilation of TEC into physics-based models can result in more realistic density reconstructions than can be produced by models alone. This research produces the first global observations of diurnal plasmaspheric

  15. How does ionospheric TEC vary if solar EUV irradiance continuously decreases?

    NASA Astrophysics Data System (ADS)

    Chen, Yiding; Liu, Libo; Le, Huijun; Wan, Weixing

    2014-12-01

    It is an interesting topic how the ionosphere varies when solar extreme ultraviolet (EUV) irradiance decreases far below normal levels. When extrapolating the total electron content (TEC)-EUV relation, significantly negative TECs at the zero solar EUV point are obtained, which indicates that TEC-EUV variation under extremely low solar EUV (ELSE) conditions does not follow the TEC-EUV trend during normal solar cycles. We suggest that there are four types of nonlinear TEC-EUV variations over the whole EUV range from zero to the solar maximum level. The features of the ionosphere under ELSE conditions were investigated using the TEC extrapolated with cubic TEC-EUV fitting. With the constraint of zero TEC at zero EUV, the cubic fitting takes not only observations but also the trend of the ionosphere (only an extremely weak ionosphere can exist when EUV vanishes) into account. The climatology features of TEC under ELSE conditions may differ from those during normal solar cycles at nighttime. Ionospheric dynamic processes are supposed to still significantly affect the ionosphere under ELSE conditions and induce this difference. With solar EUV decreasing, global electron content (GEC) should vary largely in accordance with the GEC-EUV trend during normal solar cycles, and the seasonal fluctuation of GEC declines, owing to the contraction of the ionosphere.

  16. Towards High Accuracy Reflectometry for Extreme-Ultraviolet Lithography

    PubMed Central

    Tarrio, Charles; Grantham, Steven; Squires, Matthew B.; Vest, Robert E.; Lucatorto, Thomas B.

    2003-01-01

    Currently the most demanding application of extreme ultraviolet optics is connected with the development of extreme ultraviolet lithography. Not only does each of the Mo/Si multilayer extreme-ultraviolet stepper mirrors require the highest attainable reflectivity at 13 nm (nearly 70 %), but the central wavelength of the reflectivity of these mirrors must be measured with a wavelength repeatability of 0.001 nm and the peak reflectivity of the reflective masks with a repeatability of 0.12 %. We report on two upgrades of our NIST/DARPA Reflectometry Facility that have given us the ability to achieve 0.1 % repeatability and 0.3 % absolute uncertainty in our reflectivity measurements. A third upgrade, a monochromator with thermal and mechanical stability for improved wavelength repeatability, is currently in the design phase.

  17. Development of a collective Thomson scattering system for laser-produced tin plasmas for extreme-ultraviolet light sources

    NASA Astrophysics Data System (ADS)

    Tomita, Kentaro; Sato, Yuta; Nishikawa, Kazutaka; Uchino, Kiichiro; Yanagida, Tatsuya; Tomuro, Hiroaki; Wada, Yasunori; Kunishima, Masahito; Kodama, Takeshi; Mizoguchi, Hakaru; Sunahara, Atsushi

    2015-12-01

    Spatial profiles of electron density (ne) and electron temperature (Te) of laser-produced Sn plasmas for extreme-ultraviolet (EUV) light sources have been obtained using a new collective Thomson scattering system, which has been optimized for the measurement of the ion feature spectrum. The system has an 18 pm spectral resolution, a 5 ns temporal resolution, a 50 µm spatial resolution, and sufficient stray-light rejection near the probing laser wavelength. With this system, measurements of the laser-produced Sn plasmas in the parameter ranges of 3 × 1023 < ne < 1025 m-3 and 10 < Te < 20 eV have been performed.

  18. Atmosphere and water loss from early Mars under extreme solar wind and extreme ultraviolet conditions.

    PubMed

    Terada, Naoki; Kulikov, Yuri N; Lammer, Helmut; Lichtenegger, Herbert I M; Tanaka, Takashi; Shinagawa, Hiroyuki; Zhang, Tielong

    2009-01-01

    The upper limits of the ion pickup and cold ion outflow loss rates from the early martian atmosphere shortly after the Sun arrived at the Zero-Age-Main-Sequence (ZAMS) were investigated. We applied a comprehensive 3-D multi-species magnetohydrodynamic (MHD) model to an early martian CO(2)-rich atmosphere, which was assumed to have been exposed to a solar XUV [X-ray and extreme ultraviolet (EUV)] flux that was 100 times higher than today and a solar wind that was about 300 times denser. We also assumed the late onset of a planetary magnetic dynamo, so that Mars had no strong intrinsic magnetic field at that early period. We found that, due to such extreme solar wind-atmosphere interaction, a strong magnetic field of about approximately 4000 nT was induced in the entire dayside ionosphere, which could efficiently protect the upper atmosphere from sputtering loss. A planetary obstacle ( approximately ionopause) was formed at an altitude of about 1000 km above the surface due to the drag force and the mass loading by newly created ions in the highly extended upper atmosphere. We obtained an O(+) loss rate by the ion pickup process, which takes place above the ionopause, of about 1.5 x 10(28) ions/s during the first < or =150 million years, which is about 10(4) times greater than today and corresponds to a water loss equivalent to a global martian ocean with a depth of approximately 8 m. Consequently, even if the magnetic protection due to the expected early martian magnetic dynamo is neglected, ion pickup and sputtering were most likely not the dominant loss processes for the planet's initial atmosphere and water inventory. However, it appears that the cold ion outflow into the martian tail, due to the transfer of momentum from the solar wind to the ionospheric plasma, could have removed a global ocean with a depth of 10-70 m during the first < or =150 million years after the Sun arrived at the ZAMS. PMID:19216683

  19. Energy transport in short-pulse-laser-heated targets measured using extreme ultraviolet laser backlighting.

    PubMed

    Wilson, L A; Tallents, G J; Pasley, J; Whittaker, D S; Rose, S J; Guilbaud, O; Cassou, K; Kazamias, S; Daboussi, S; Pittman, M; Delmas, O; Demailly, J; Neveu, O; Ros, D

    2012-08-01

    The accurate characterization of thermal electron transport and the determination of heating by suprathermal electrons in laser driven solid targets are both issues of great importance to the current experiments being performed at the National Ignition Facility, which aims to achieve thermonuclear fusion ignition using lasers. Ionization, induced by electronic heat conduction, can cause the opacity of a material to drop significantly once bound-free photoionization is no longer energetically possible. We show that this drop in opacity enables measurements of the transmission of extreme ultraviolet (EUV) laser pulses at 13.9 nm to act as a signature of the heating of thin (50 nm) iron layers with a 50-nm thick parylene-N (CH) overlay irradiated by 35-fs pulses at irradiance 3×10(16) Wcm(-2). Comparing EUV transmission measurements at different times after irradiation to fluid code simulations shows that the target is instantaneously heated by hot electrons (with approximately 10% of the laser energy), followed by thermal conduction with a flux limiter of ≈0.05. PMID:23005868

  20. Properties of the extreme ultraviolet emission from germanium and gallium plasmas

    NASA Astrophysics Data System (ADS)

    Li, Bowen; Hara, Hiroyuki; Suzuki, Yuhei; Arai, Goki; Higashiguchi, Takeshi; Ohashi, Hayato; Jiang, Weihua; Makimura, Tetsuya; Sakaue, Hiroyuki A.; Suzuki, Chihiro; Kato, Daiji; Murakami, Izumi; Dunne, Padraig; Long, Elaine; Sheridan, Paul; Chen, Ximeng; O'Sullivan, Gerry

    2015-08-01

    We report on the usefulness of germanium (Ge) and gallium (Ga) plasmas as potential extreme ultraviolet (EUV) sources at both 6.x and 13.5 nm, wavelengths of interest for lithography and metrology applications. Spectra from plasmas produced using neodymium-doped yttrium-aluminum-garnet (Nd:YAG) lasers with pulse durations of 170 ps and 7 ns [full width at half-maximum] and a compact electron beam ion trap have been used to determine the charge states responsible while theoretical calculations using atomic structure Cowan and HULLAC codes enabled the identification of structure in the Ge spectrum arising from strong transitions of the type 3d - 4p and 3d - 4f. Transitions of the type 3d - 4f in Ge10+ and Ga11+ were found to lie in the 6.x nm region, while 3 p -3 d transitions from a range of stages in both elements contribute in the 13.5 nm region. We also studied the emission spectra of galinstan plasmas, and the results imply that galinstan might provide a promising candidate for EUV applications that exploit the progress in the development of multilayer mirrors for operation at 6.x nm.

  1. Thermal conduction properties of Mo/Si multilayers for extreme ultraviolet optics

    NASA Astrophysics Data System (ADS)

    Bozorg-Grayeli, Elah; Li, Zijian; Asheghi, Mehdi; Delgado, Gil; Pokrovsky, Alexander; Panzer, Matthew; Wack, Daniel; Goodson, Kenneth E.

    2012-10-01

    Extreme ultraviolet (EUV) lithography requires nanostructured optical components, whose reliability can be influenced by radiation absorption and thermal conduction. Thermal conduction analysis is complicated by sub-continuum electron and phonon transport and the lack of thermal property data. This paper measures and interprets thermal property data, and their evolution due to heating exposure, for Mo/Si EUV mirrors with 6.9 nm period and Mo/Si thickness ratios of 0.4/0.6 and 0.6/0.4. We use time-domain thermoreflectance and the 3ω method to estimate the thermal resistance between the Ru capping layer and the Mo/Si multilayers (RRu-Mo/Si = 1.5 m2 K GW-1), as well as the out-of-plane thermal conductivity (kMo/Si 1.1 W m-1 K-1) and thermal anisotropy (η = 13). This work also reports the impact of annealing on thermal conduction in a co-deposited MoSi2 layer, increasing the thermal conductivity from 1.7 W m-1 K-1 in the amorphous phase to 2.8 W m-1 K-1 in the crystalline phase.

  2. Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks

    NASA Astrophysics Data System (ADS)

    Wood, Obert; Wong, Keith; Parks, Valentin; Kearney, Patrick; Meyer-Ilse, Julia; Luong, Vu; Philipsen, Vicky; Faheem, Mohammad; Liang, Yifan; Kumar, Ajay; Chen, Esther; Bennett, Corbin; Fu, Bianzhu; Gribelyuk, Michael; Zhao, Wayne; Mangat, Pawitter; Van der Heide, Paul

    2016-03-01

    Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the 7 nm technology node and beyond. EUV photomasks with alternative materials to the commonly used Mo/Si multilayer (ML) reflector and patterned Ta-based absorber (both of which are known to require shadow effect corrections and lead to large through-focus pattern placement errors) are being actively explored. Because the reflective bandwidth of a Ru/Si ML is significantly wider than the reflective bandwidth of a Mo/Si ML and the effective reflectance plane in Ru/Si is closer to the ML surface, Ru/Si ML coatings may be viable alternatives to the Mo/Si ML coatings that are commercially available today because they will lead to smaller mask 3D effects. In this paper, increases in the peak reflectivity and the reflective bandwidth of Ru/Si ML reflectors by using B4C interlayers to improve the Ru-Si interfaces are discussed. The conclusions of this paper are supported with the results of both experimental measurements and rigorous simulations.

  3. Extreme ultraviolet emission and confinement of tin plasmas in the presence of a magnetic field

    SciTech Connect

    Roy, Amitava E-mail: aroy@barc.gov.in; Murtaza Hassan, Syed; Harilal, Sivanandan S.; Hassanein, Ahmed; Endo, Akira; Mocek, Tomas

    2014-05-15

    We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion emission from a laser produced Sn plasma for various laser pulse duration and intensity. For producing plasmas, planar slabs of pure Sn were irradiated with 1064 nm, Nd:YAG laser pulses with varying pulse duration (5–15 ns) and intensity. A magnetic trap was fabricated with the use of two neodymium permanent magnets which provided a magnetic field strength ∼0.5 T along the plume expansion direction. Our results indicate that the EUV conversion efficiency do not depend significantly on applied axial magnetic field. Faraday Cup ion analysis of Sn plasma show that the ion flux reduces by a factor of ∼5 with the application of an axial magnetic field. It was found that the plasma plume expand in the lateral direction with peak velocity measured to be ∼1.2 cm/μs and reduced to ∼0.75 cm/μs with the application of an axial magnetic field. The plume expansion features recorded using fast photography in the presence and absence of 0.5 T axial magnetic field are simulated using particle-in-cell code. Our simulation results qualitatively predict the plasma behavior.

  4. Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach

    NASA Astrophysics Data System (ADS)

    Upadhyaya, Mihir; Jindal, Vibhu; Basavalingappa, Adarsh; Herbol, Henry; Harris-Jones, Jenah; Jang, Il-Yong; Goldberg, Kenneth A.; Mochi, Iacopo; Marokkey, Sajan; Demmerle, Wolfgang; Pistor, Thomas V.; Denbeaux, Gregory

    2015-04-01

    Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native extreme ultraviolet (EUV) mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability they cause. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a multilayer growth model based on a level-set technique was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. Further, the printability of the characterized native defects was studied at the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model, was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape.

  5. Infrared-laser-assisted photoionization of helium by coherent extreme ultraviolet light

    SciTech Connect

    Tong Xiaomin; Toshima, Nobuyuki

    2010-04-15

    We investigate the infrared (IR)-laser-assisted photoionization of He by a coherent extreme ultraviolet (euv) light solving the time-dependent Schroedinger equation. A combined field of the 13th and 15th harmonics created from the same IR laser source is used to ionize He atoms coherently. We show that the ionization probabilities oscillate as a function of the time delay between the IR and the euv pulses. On the other hand, the oscillation amplitude increases as the IR intensity increases, reaches a maximum when the IR intensity is around 6x10{sup 12} W/cm{sup 2}, and then decreases as the IR intensity increases further. Decomposing the ionization probabilities by the 13th and 15th harmonics, we illustrate that the oscillation amplitude is small for a lower IR laser intensity due to the fact that the transition strength by the 13th harmonic is much smaller than the one by the 15th harmonic. When the IR intensity increases further above 6x10{sup 12} W/cm{sup 2}, the transition strength by the 13th harmonic becomes larger than the one by the 15th harmonic and the oscillation amplitude is reduced again. By tuning the relative field strengths of the 13th and 15th harmonics or the IR intensity, we can control the oscillation amplitude.

  6. An extreme ultraviolet spectrometer experiment for the Shuttle Get Away Special Program

    NASA Technical Reports Server (NTRS)

    Conway, R. R.; Mccoy, R. P.; Meier, R. R.; Mount, G. H.; Prinz, D. K.; Young, J. M.; Carruthers, G. R.

    1984-01-01

    An extreme ultraviolet (EUV) spectrometer experiment operated successfully during the STS-7 mission in an experiment to measure the global and diurnal variation of the EUV airglow. The spectrometer is an F 3.5 Wadsworth mount with mechanical collimator, a 75 x 75 mm grating, and a bare microchannel plate detector providing a spectral resolution of 7 X FWHM. Read-out of the signal is through discrete channels or resistive anode techniques. The experiment includes a microcomputer, 20 Mbit tape recorder, and a 28V, 40 Ahr silver-zinc battery. It is the first GAS payload to use an opening door. The spectrometer's 0.1 x 4.2 deg field of view is pointed vertically out of the shuttle bay. During the STS-7 flight data were acquired continuously for a period of 5 hours and 37 minutes, providing spectra of the 570 A to 850 A wavelength region of the airglow. Five diurnal cycles of the 584 A emission of neutral helium and the 834 A emission of ionized atomic oxygen were recorded. The experiment also recorded ion events and pressure pulses associated with thruster firings. The experiment is to fly again on Mission 41-F.

  7. Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K.

    1994-08-01

    The performance of a new 10x-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 {mu}m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An off-set aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 450 turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of two of the design value. Images recorded in PMMA and ZEP 520 resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 {mu}m.

  8. Characterization of an expanded-field Schwarzschild objective for extreme ultraviolet lithography

    SciTech Connect

    Kubiak, G.D.; Tichenor, D.A.; Ray-Chaudhuri, A.K.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H. ); Bjorkholm, J.E.; Fetter, L.A.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Wood, O.R. II ); Waskiewicz, W.K.; White, D.L.; Windt, D.L. ); Jewell, T.E. )

    1994-11-01

    The performance of a new 10[times]-reduction Schwarzschild system for projection imaging at 13.4 nm wavelength is reported. The optical design is optimized to achieve 0.1 [mu]m resolution over a 0.4 mm image field of view, an increase in area of a factor of 100 over previous designs. An offset aperture, located on the convex primary, defines an unobscured 0.08 numerical aperture. The system is illuminated using extreme ultraviolet (EUV) radiation emitted from a laser plasma source and collected by an ellipsoidal condenser. A 45[degree] turning mirror is used to relay the collected EUV radiation onto a near-normal reflecting mask. Multiple sets of primary and secondary elements were fabricated, matched, and clocked to minimize the effects of small figure errors on imaging performance. Optical metrology indicates that the wave-front error within the subaperture used is within a factor of 2 of the design value. Images recorded in poly(methyl methacrylate) and ZEP 520 (Nippon Zeon) resists reveal good imaging fidelity over much of the 0.4 mm field with equal line/space gratings being resolved to 0.1 [mu]m.

  9. On the Importance of the Flare's Late Phase for the Solar Extreme Ultraviolet Irradiance

    NASA Technical Reports Server (NTRS)

    Woods, Thomas N.; Eparvier, Frank; Jones, Andrew R.; Hock, Rachel; Chamberlin, Phillip C.; Klimchuk, James A.; Didkovsky, Leonid; Judge, Darrell; Mariska, John; Bailey, Scott; Tobiska, W. Kent; Schrijver, Carolus J.; Webb, David F.; Warren, Harry

    2011-01-01

    The new solar extreme ultraviolet (EUV) irradiance observations from NASA Solar Dynamics Observatory (SDO) have revealed a new class of solar flares that are referred to as late phase flares. These flares are characterized by the hot 2-5 MK coronal emissions (e.g., Fe XVI 33.5 nm) showing large secondary peaks that appear many minutes to hours after an eruptive flare event. In contrast, the cool 0.7-1.5 MK coronal emissions (e.g., Fe IX 17.1 nm) usually dim immediately after the flare onset and do not recover until after the delayed second peak of the hot coronal emissions. We refer to this period of 1-5 hours after the fl amrea sin phase as the late phase, and this late phase is uniquely different than long duration flares associated with 2-ribbon flares or large filament eruptions. Our analysis of the late phase flare events indicates that the late phase involves hot coronal loops near the flaring region, not directly related to the original flaring loop system but rather with the higher post-eruption fields. Another finding is that space weather applications concerning Earth s ionosphere and thermosphere need to consider these late phase flares because they can enhance the total EUV irradiance flare variation by a factor of 2 when the late phase contribution is included.

  10. Flat-field anastigmatic mirror objective for high-magnification extreme ultraviolet microscopy

    NASA Astrophysics Data System (ADS)

    Toyoda, Mitsunori

    2015-08-01

    To apply high-definition microscopy to the extreme ultraviolet (EUV) region in practice, i.e. to enable in situ observation of living tissue and the at-wavelength inspection of lithography masks, we constructed a novel reflective objective made of three multilayer mirrors. This objective is configured as a two-stage imaging system made of a Schwarzschild two-mirror system as the primary objective and an additional magnifier with a single curved mirror. This two-stage configuration can provide a high magnification of 1500, which is suitable for real-time observation with an EUV charge coupled device (CCD) camera. Besides, since off-axis aberrations can be corrected by the magnifier, which provides field flattener optics, we are able to configure the objective as a flat-field anastigmatic system, in which we will have a diffraction-limited spatial resolution over a large field-of-view. This paper describes in detail the optical design of the present objective. After calculating the closed-form equations representing the third-order aberrations of the objective, we apply these equations to practical design examples with a numerical aperture of 0.25 and an operation wavelength of 13.5 nm. We also confirm the imaging performances of this novel design by using the numerical ray-tracing method.

  11. New measurements by the TIMED solar extreme-ultraviolet experiment: Implications for thermospheric modeling

    NASA Astrophysics Data System (ADS)

    Solomon, S. C.; Bailey, S. M.; Eparvier, F. G.; Gladstone, G. R.; Paxton, L. J.; Woods, T. N.

    2003-04-01

    The Thermosphere-Ionosphere-Mesosphere Energetics and Dynamics (TIMED) satellite, launched in December 2001, is now performing comprehensive new measurements of the solar irradiance spectrum in the extreme-ultraviolet and soft X-ray regions. The TIMED solar EUV experiment (SEE) consists of an ultraviolet spectrometer and an X-ray photometer, and performs a full-disk spectral measurement once per orbit. Comparison of TIMED/SEE measurements to contemporaneous satellite observations from the Student Nitric Oxide Explorer (SNOE) and a calibration rocket shows that solar irradiance in the XUV spectral range, from about 1 to 25 nm, is significantly more intense than previous observations. SEE solar spectra can be used as inputs to thermosphere/ionosphere models, including photoelectron/airglow models, thermosphere global mean models, and general circulation models. The resulting revisions to predicted photoelectron fluxes, ionization rates, electron density, ion composition, odd-nitrogen composition, and airglow emission rates show improved agreement with observations. We compare predictions to measurements for some of these, including ground based measurements of ionospheric parameters and airglow measurements by the TIMED global ultraviolet imager.

  12. Formation and direct writing of color centers in LiF using a laser-induced extreme ultraviolet plasma in combination with a Schwarzschild objective

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Mann, Klaus; Feigl, Torsten; Kaiser, Norbert

    2005-10-15

    In order to generate high-energy densities of 13.5 nm radiation, an extreme ultraviolet (EUV) Schwarzschild mirror objective with a numerical aperture of 0.44 and a demagnification of 10 was developed and adapted to a compact laser-based EUV source. The annular spherical mirror substrates were coated with Mo/Si multilayer systems. With a single mirror reflectance of more than 65% the total transmittance of the Schwarzschild objective exceeds 40% at 13.5 nm. From the properties of the EUV source (pulse energy 3 mJ at 13.5 nm and plasma diameter approximately 300 {mu}m), energy densities of 73 mJ/cm{sup 2} at a pulse length of 6 ns can be estimated in the image plane of the objective. As a first application, the formation of color centers in lithium fluoride crystals by EUV radiation was investigated. F{sub 2}, F{sub 3}, and F{sub 3}{sup +} color centers could be identified by absorption spectroscopy. The formation dynamics was studied as a function of the EUV dose. By imaging of a pinhole positioned behind the plasma, an EUV spot of 5 {mu}m diameter was generated, which accomplishes direct writing of color centers with micrometer resolution.

  13. PRODUCTION OF THE EXTREME-ULTRAVIOLET LATE PHASE OF AN X CLASS FLARE IN A THREE-STAGE MAGNETIC RECONNECTION PROCESS

    SciTech Connect

    Dai, Y.; Ding, M. D.; Guo, Y.

    2013-08-20

    We report on observations of an X class flare on 2011 September 6 by the instruments on board the Solar Dynamics Observatory. The flare occurs in a complex active region with multiple polarities. The Extreme-Ultraviolet (EUV) Variability Experiment observations in the warm coronal emission reveal three enhancements, the third of which corresponds to an EUV late phase. The three enhancements have a one-to-one correspondence to the three stages in flare evolution identified by the spatially resolved Atmospheric Imaging Assembly observations, which are characterized by a flux rope eruption, a moderate filament ejection, and the appearance of EUV late phase loops, respectively. The EUV late phase loops are spatially and morphologically distinct from the main flare loops. Multi-channel analysis suggests the presence of a continuous but fragmented energy injection during the EUV late phase resulting in the warm corona nature of the late phase loops. Based on these observational facts, we propose a three-stage magnetic reconnection scenario to explain the flare evolution. Reconnections in different stages involve different magnetic fields but show a casual relationship between them. The EUV late phase loops are mainly produced by the least energetic magnetic reconnection in the last stage.

  14. A Comparative Study of the Mass Distribution of Extreme-Ultraviolet-selected White Dwarfs

    NASA Astrophysics Data System (ADS)

    Napiwotzki, R.; Green, Paul J.; Saffer, Rex A.

    1999-05-01

    We present new determinations of effective temperature, surface gravity, and masses for a sample of 46 hot DA white dwarfs selected from the Extreme Ultraviolet Explorer (EUVE) and ROSAT Wide Field Camera bright source lists in the course of a near-infrared survey for low-mass companions. Our analysis, based on hydrogen non-LTE model atmospheres, provides a map of LTE correction vectors, which allow a thorough comparison with previous LTE studies. We find that previous studies underestimate both the systematic errors and the observational scatter in the determination of white dwarf parameters obtained via fits to model atmospheres. The structure of very hot or low-mass white dwarfs depends sensitively on their history. To compute white dwarf masses, we thus use theoretical mass-radius relations that take into account the complete evolution from the main sequence. We find a peak mass of our white dwarf sample of 0.59 Msolar, in agreement with the results of previous analyses. However, we do not confirm a trend of peak mass with temperature reported in two previous analyses. Analogous to other EUV-selected samples, we note a lack of low-mass white dwarfs and a large fraction of massive white dwarfs. Only one white dwarf is likely to have a helium core. While the lack of helium white dwarfs in our sample can be easily understood from their high cooling rate, and therefore low detection probability in our temperature range, this is not enough to explain the large fraction of massive white dwarfs. This feature very likely results from a decreased relative sample volume for low-mass white dwarfs caused by interstellar absorption in EUV-selected samples. Spectral observations reported here were obtained with the Multiple Mirror Telescope, a joint facility of the University of Arizona and the Smithsonian Institution, and with the Bok telescope at the Steward Observatory of the University of Arizona.

  15. Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

    NASA Astrophysics Data System (ADS)

    Kim, In-Seon; Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun

    2015-07-01

    The usage of the extreme ultraviolet (EUV) pellicle is regarded as the solution for defect control since it can protect the mask from airborne debris. However some obstacles disrupt real-application of the pellicle such as structural weakness, thermal damage and so on. For these reasons, flawless fabrication of the pellicle is impossible. In this paper, we discuss the influence of deformed pellicle in terms of non-uniform intensity distribution and critical dimension (CD) uniformity. It was found that non-uniform intensity distribution is proportional to local tilt angle of pellicle and CD variation was linearly proportional to transmission difference. When we consider the 16 nm line and space pattern with dipole illumination (σc=0.8, σr=0.1, NA=0.33), the transmission difference (max-min) of 0.7 % causes 0.1 nm CD uniformity. Influence of gravity caused deflection to the aerial image is small enough to ignore. CD uniformity is less than 0.1 nm even for the current gap of 2 mm between mask and pellicle. However, heat caused EUV pellicle wrinkle might cause serious image distortion because a wrinkle of EUV pellicle causes a transmission loss variation as well as CD non-uniformity. In conclusion, local angle of a wrinkle, not a period or an amplitude of a wrinkle is a main factor to CD uniformity, and local angle of less than ~270 mrad is needed to achieve 0.1 nm CD uniformity with 16 nm L/S pattern.

  16. Development of a EUV test facility at the Marshall Space Flight Center

    NASA Astrophysics Data System (ADS)

    West, Edward; Pavelitz, Steve; Kobayashi, Ken; Robinson, Brian; Cirtain, Jonathan; Gaskin, Jessica; Winebarger, Amy; Krause, Linda; McGuirk, Michael; Darnel, Jonathan

    2011-09-01

    This paper will describe a new Extreme Ultraviolet (EUV) test facility that is being developed at the Marshall Space Flight Center (MSFC) to test EUV telescopes. Two flight programs, Hi-C, the high resolution coronal imager (a sounding rocket program), and SUVI, the Solar Ultraviolet Imager (GOES-R), set the requirements for this new facility. This paper will discuss those requirements, the EUV source characteristics, the wavelength resolution that is expected and the vacuum chambers (Stray Light Facility, Xray Calibration Facility and the NSSTC EUV test chamber) where this facility will be used.

  17. Extreme Ultraviolet Variability Experiment (EVE) on the Solar Dynamics Observatory (SDO): Overview of Science Objectives, Instrument Design, Data Products, and Model Developments

    NASA Technical Reports Server (NTRS)

    Woods, T. N.; Eparvier, F. G.; Hock, R.; Jones, A. R.; Woodraska, D.; Judge, D.; Didkovsky, L.; Lean, J.; Mariska, J.; Warren, H.; McMullin, D.; Chamberlin, P.; Berthiaume, G.; Bailey, S.; Fuller-Rowell, T.; Sojka, J.; Tobiska, W. K.; Viereck, R.

    2010-01-01

    The highly variable solar extreme ultraviolet (EUV) radiation is the major energy input to the Earth's upper atmosphere, strongly impacting the geospace environment, affecting satellite operations, communications, and navigation. The Extreme ultraviolet Variability Experiment (EVE) onboard the NASA Solar Dynamics Observatory (SDO) will measure the solar EUV irradiance from 0.1 to 105 nm with unprecedented spectral resolution (0.1 nm), temporal cadence (ten seconds), and accuracy (20%). EVE includes several irradiance instruments: The Multiple EUV Grating Spectrographs (MEGS)-A is a grazingincidence spectrograph that measures the solar EUV irradiance in the 5 to 37 nm range with 0.1-nm resolution, and the MEGS-B is a normal-incidence, dual-pass spectrograph that measures the solar EUV irradiance in the 35 to 105 nm range with 0.1-nm resolution. To provide MEGS in-flight calibration, the EUV SpectroPhotometer (ESP) measures the solar EUV irradiance in broadbands between 0.1 and 39 nm, and a MEGS-Photometer measures the Sun s bright hydrogen emission at 121.6 nm. The EVE data products include a near real-time space-weather product (Level 0C), which provides the solar EUV irradiance in specific bands and also spectra in 0.1-nm intervals with a cadence of one minute and with a time delay of less than 15 minutes. The EVE higher-level products are Level 2 with the solar EUV irradiance at higher time cadence (0.25 seconds for photometers and ten seconds for spectrographs) and Level 3 with averages of the solar irradiance over a day and over each one-hour period. The EVE team also plans to advance existing models of solar EUV irradiance and to operationally use the EVE measurements in models of Earth s ionosphere and thermosphere. Improved understanding of the evolution of solar flares and extending the various models to incorporate solar flare events are high priorities for the EVE team.

  18. [Design of optical system for solar extreme-ultraviolet imaging spectrometer].

    PubMed

    Liu, Zhuang; Gong, Yan

    2012-03-01

    Hyper-spectral imaging observation of the sun in the EUV region is an important method of research for solar's upper transition region, corona and plasma's physical property. Based on the application objective of solar extreme ultraviolet imaging spectrometer (SEUIS), combined with the current states of domestic and foreign extreme ultraviolet imaging spectrometer, a few of parameters for SEUIS design were drew up in the present paper. The advantages and disadvantages of all kinds of optical configurations were discussed,and the configuration of combination of telescope and spectrometer was chosen. The available main components were also described, off-axis parabolic mirror was chosen for telescope, and a high density uniform-line-space toroidal grating for dispersion device. The optical system which satisfies the performance parameters was designed. The design process, detailed parameters and results were presented in the end. The working wavelength of the optics system is 17.0-21.0 nm, the field of view is 1 228" x 1 024", the spatial resolution is 0.8 arc sec x pixel(-1), the spectral resolution is about 0.00198 nm x pixel(-1), and the total length of system is about 2.8 m. PMID:22582664

  19. A volume-limited ROSAT survey of extreme ultraviolet emission from all nondegenerate stars within 10 parsecs

    NASA Technical Reports Server (NTRS)

    Wood, Brian E.; Brown, Alexander; Linsky, Jeffrey L.; Kellett, Barry J.; Bromage, Gordon E.; Hodgkin, Simon T.; Pye, John P.

    1994-01-01

    We report the results of a volume-limited ROSAT Wide Field Camera (WFC) survey of all nondegenerate stars within 10 pc. Of the 220 known star systems within 10 pc, we find that 41 are positive detections in at least one of the two WFC filter bandpasses (S1 and S2), while we consider another 14 to be marginal detections. We compute X-ray luminosities for the WFC detections using Einstein Imaging Proportional Counter (IPC) data, and these IPC luminosities are discussed along with the WFC luminosities throughout the paper for purposes of comparison. Extreme ultraviolet (EUV) luminosity functions are computed for single stars of different spectral types using both S1 and S2 luminosities, and these luminosity functions are compared with X-ray luminosity functions derived by previous authors using IPC data. We also analyze the S1 and S2 luminosity functions of the binary stars within 10 pc. We find that most stars in binary systems do not emit EUV radiation at levels different from those of single stars, but there may be a few EUV-luminous multiple-star systems which emit excess EUV radiation due to some effect of binarity. In general, the ratio of X-ray luminosity to EUV luminosity increases with increasing coronal emission, suggesting that coronally active stars have higher coronal temperatures. We find that our S1, S2, and IPC luminosities are well correlated with rotational velocity, and we compare activity-rotation relations determined using these different luminosities. Late M stars are found to be significantly less luminous in the EUV than other late-type stars. The most natural explanation for this results is the concept of coronal saturation -- the idea that late-type stars can emit only a limited fraction of their total luminosity in X-ray and EUV radiation, which means stars with very low bolometric luminosities must have relatively low X-ray and EUV luminosities as well. The maximum level of coronal emission from stars with earlier spectral types is studied

  20. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOEpatents

    Hassanein, Ahmed; Konkashbaev, Isak

    2006-10-03

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  1. Analysis of line-and-space resist patterns with sub-20 nm half-pitch fabricated using high-numerical-aperture exposure tool of extreme ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

    2016-09-01

    The resolution of resist processes for extreme ultraviolet (EUV) lithography has been steadily improved and has reached the sub-20 nm half-pitch region. Currently, the resist materials capable of resolving 11 nm half-pitch line-and-space patterns are being developed in industrial fields. In this study, the line-and-space resist patterns with sub-20 nm half-pitches were fabricated using a high-numerical-aperture (NA) EUV exposure tool and analyzed by the Monte Carlo simulation. The scanning electron microscopy (SEM) images of resist patterns after their development were compared with the latent images calculated on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. The approximate relationship between resist patterns and latent images was clarified for the sub-20 nm half-pitch region. For the realization of 11 nm half-pitch fabrication, the suppression of the stochastic effects in the development process is an important consideration.

  2. Advantages of a Grazing Incidence Monochromator in the Extreme Ultraviolet

    NASA Astrophysics Data System (ADS)

    Barton, Sarah; Turley, R. Steven

    2006-10-01

    One of the main goals of the BYU Thin Films group is to find optical constants for materials in the Extreme Ultraviolet. This is accomplished by taking reflection and transmission measurements. The addition of a Grazing Incidence Monochromator to our current system allows us to take reflectance measurements at wavelengths currently unavailable on the Normal Incidence Monochromator (Monarch).

  3. Development of extreme ultraviolet and soft x-ray multilayer optics for scientific studies with femtosecond/attosecond sources

    SciTech Connect

    Aquila, Andrew Lee

    2009-05-21

    The development of multilayer optics for extreme ultraviolet (EUV) radiation has led to advancements in many areas of science and technology, including materials studies, EUV lithography, water window microscopy, plasma imaging, and orbiting solar physics imaging. Recent developments in femtosecond and attosecond EUV pulse generation from sources such as high harmonic generation lasers, combined with the elemental and chemical specificity provided by EUV radiation, are opening new opportunities to study fundamental dynamic processes in materials. Critical to these efforts is the design and fabrication of multilayer optics to transport, focus, shape and image these ultra-fast pulses This thesis describes the design, fabrication, characterization, and application of multilayer optics for EUV femtosecond and attosecond scientific studies. Multilayer mirrors for bandwidth control, pulse shaping and compression, tri-material multilayers, and multilayers for polarization control are described. Characterization of multilayer optics, including measurement of material optical constants, reflectivity of multilayer mirrors, and metrology of reflected phases of the multilayer, which is critical to maintaining pulse size and shape, were performed. Two applications of these multilayer mirrors are detailed in the thesis. In the first application, broad bandwidth multilayers were used to characterize and measure sub-100 attosecond pulses from a high harmonic generation source and was performed in collaboration with the Max-Planck institute for Quantum Optics and Ludwig- Maximilians University in Garching, Germany, with Professors Krausz and Kleineberg. In the second application, multilayer mirrors with polarization control are useful to study femtosecond spin dynamics in an ongoing collaboration with the T-REX group of Professor Parmigiani at Elettra in Trieste, Italy. As new ultrafast x-ray sources become available, for example free electron lasers, the multilayer designs

  4. Direct photoetching of polymers using radiation of high energy density from a table-top extreme ultraviolet plasma source

    SciTech Connect

    Barkusky, Frank; Bayer, Armin; Peth, Christian; Mann, Klaus

    2009-01-01

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-driven EUV plasma source utilizing a solid Au target. By 10x demagnified imaging of the plasma a maximum pulse energy density of {approx}0.73 J/cm{sup 2} at a wavelength of 13.5 nm can be achieved in the image plane of the objective at a pulse duration of 8.8 ns. In this paper we present EUV photoetching rates measured for polymethyl methacrylate, polycarbonate, and polytetrafluoroethylene at various fluence levels. A linear dependence between etch depth and applied EUV pulse number could be observed without the necessity for any incubation pulses. By evaluating the slope of these data, etch rates were determined, revealing also a linear behavior for low fluences. A threshold energy density could not be observed. The slope of the linear etch regime as well as deviations from the linear trend at higher energy densities are discussed and compared to data known from deep UV laser ablation. Furthermore, the surface roughness of the structured polymers was measured by atomic force microscopy and compared to the nonirradiated polymer surface, indicating a rather smooth etch process (roughness increase of 20%-30%). The different shapes of the etch craters observed for the three polymers at high energy densities can be explained by the measured fluence dependence of the etch rates, having consequences for the proper use of polymer ablation for beam profiling of focused EUV radiation.

  5. Earth-orbiting extreme ultraviolet spectroscopic mission: SPRINT-A/EXCEED

    NASA Astrophysics Data System (ADS)

    Yoshikawa, I.; Tsuchiya, F.; Yamazaki, A.; Yoshioka, K.; Uemizu, K.; Murakami, G.; Kimura, T.; Kagitani, M.; Terada, N.; Kasaba, Y.; Sakanoi, T.; Ishii, H.; Uji, K.

    2012-09-01

    The EXCEED (Extreme Ultraviolet Spectroscope for Exospheric Dynamics) mission is an Earth-orbiting extreme ultraviolet (EUV) spectroscopic mission and the first in the SPRINT series being developed by ISAS/JAXA. It will be launched in the summer of 2013. EUV spectroscopy is suitable for observing tenuous gases and plasmas around planets in the solar system (e.g., Mercury, Venus, Mars, Jupiter, and Saturn). Advantage of remote sensing observation is to take a direct picture of the plasma dynamics and distinguish between spatial and temporal variability explicitly. One of the primary observation targets is an inner magnetosphere of Jupiter, whose plasma dynamics is dominated by planetary rotation. Previous observations have shown a few percents of the hot electron population in the inner magnetosphere whose temperature is 100 times higher than the background thermal electrons. Though the hot electrons have a significant impact on the energy balance in the inner magnetosphere, their generation process has not yet been elucidated. In the EUV range, a number of emission lines originate from plasmas distributed in Jupiter's inner magnetosphere. The EXCEED spectrograph is designed to have a wavelength range of 55-145 nm with minimum spectral resolution of 0.4 nm, enabling the electron temperature and ion composition in the inner magnetosphere to be determined. Another primary objective is to investigate an unresolved problem concerning the escape of the atmosphere to space. Although there have been some in-situ observations by orbiters, our knowledge is still limited. The EXCEED mission plans to make imaging observations of plasmas around Venus and Mars to determine the amounts of escaping atmosphere. The instrument's field of view (FOV) is so wide that we can get an image from the interaction region between the solar wind and planetary plasmas down to the tail region at one time. This will provide us with information about outward-flowing plasmas, e.g., their composition

  6. TWO TYPES OF EXTREME-ULTRAVIOLET BRIGHTENINGS IN AR 10926 OBSERVED BY HINODE/EIS

    SciTech Connect

    Lee, K.-S.; Moon, Y.-J.; Choe, G. S.; Kim, Sujin; Cho, Kyung-Suk; Imada, S.

    2011-07-20

    We have investigated seven extreme-ultraviolet (EUV) brightenings in the active region AR 10926 on 2006 December 2 observed by the EUV Imaging Spectrometer on board the Hinode spacecraft. We have determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T = 4.7 - 6.4) by fitting each line profile to a Gaussian function. The Doppler velocity maps for different temperatures are presented to show the height dependence of the Doppler shifts. It is found that the active region brightenings show two distinct Doppler shift patterns. The type 1 brightening shows a systematic increase of Doppler velocity from -68 km s{sup -1} (strong blueshift) at log T = 4.7 to -2 km s{sup -1} (weak blueshift) at log T = 6.4, while the type 2 brightenings have Doppler velocities in the range from -20 km s{sup -1} to 20 km s{sup -1}. The type 1 brightening point is considered to sit in an upward reconnection outflow whose speed decreases with height. In both types of brightenings, the non-thermal velocity is found to be significantly enhanced at log T = 5.8 compared to the background region. We have also determined electron densities from line ratios and derived temperatures from emission measure loci using the CHIANTI atomic database. The electron densities of all brightenings are comparable to typical values in active regions (log N{sub e} = 9.9-10.4). The emission measure loci plots indicate that these brightenings should be multi-thermal whereas the background is isothermal. The differential emission measure as a function of temperature shows multiple peaks in the EUV brightening regions, while it has only a single peak (log T = 6.0) in the background region. Using Michelson Doppler Imager magnetograms, we have found that the type 1 brightening is associated with a canceling magnetic feature with a flux canceling rate of 2.4 x 10{sup 18} Mx hr{sup -1}. We also found the canceling magnetic feature and chromospheric brightenings in the type 1

  7. X ray, extreme and far ultraviolet optical thin films for space applications

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.; Kim, Jongmin

    1993-01-01

    Far and extreme ultraviolet optical thin film filters find many uses in space astronomy, space astrophysics, and space aeronomy. Spacebased spectrographs are used for studying emission and absorption features of the earth, planets, sun, stars, and the interstellar medium. Most of these spectrographs use transmission or reflection filters. This requirement has prompted a search for selective filtering coatings with high throughput in the FUV and EUV spectral region. Important progress toward the development of thin film filters with improved efficiency and stability has been made in recent years. The goal for this field is the minimization of absorption to get high throughput and enhancement of wavelength selection. The Optical Aeronomy Laboratory (OAL) at the University of Alabama in Huntsville has recently developed the technology to determine optical constants of bulk and film materials for wavelengths extending from x-rays (0.1 nm) to the FUV (200 nm), and several materials have been identified that were used for designs of various optical devices which previously have been restricted to space application in the visible and near infrared. A new design concept called the Pi-multilayer was introduced and applied to the design of optical coatings for wavelengths extending from x-rays to the FUV. Section 3 of this report explains the Pi-multilayer approach and demonstrates its application for the design and fabrication of the FUV coatings. Two layer Pi-stacks have been utilized for the design of reflection filters in the EUV wavelength range from 70 - 100 nm. In order to eliminate losses due to the low reflection of the imaging optics and increase throughput and out-of-band rejection of the EUV instrumentation we introduced a self-filtering camera concept. In the FUV region, MgF2 and LiF crystals are known to be birefringent. Transmission polarizers and quarterwave retarders made of MgF2 or LiF crystals are commercially available but the performances are poor. New

  8. Comparison of solar radio and extreme ultraviolet synoptic limb charts during the present solar maximum

    NASA Astrophysics Data System (ADS)

    Silva, A. J. Oliveira e.; Selhorst, C. L.; Simões, P. J. A.; Giménez de Castro, C. G.

    2016-08-01

    Aims: The present solar cycle is particular in many aspects: it had a delayed rising phase, it is the weakest of the last 100 yrs, and it presents two peaks separated by more than one year. To understand the impact of these characteristics on the solar chromosphere and coronal dynamics, images from a wide wavelength range are needed. In this work we use the 17 GHz radio continuum, which is formed in the upper chromosphere and the extreme ultraviolet (EUV) lines 304 and 171 Å, that come from the transition region (He ii, T ~ 6-8 × 104 K) and the corona (Fe IX, X, T ~ 106 K), respectively.We extend upon a previous similar analysis, and compare the mean equatorial and polar brightening behavior at radio and EUV wavelengths during the maximum of the present solar cycle, covering the period between 2010 and 2015. Methods: We analyze daily images at 304 and 171 Å obtained by the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO). The 17 GHz maps were obtained by the Nobeyama Radioheliograph (NoRH). To construct synoptic limb charts, we calculated the mean emission of delimited limb areas with 100'' wide and angular separation of 5°. Results: At the equatorial region, the results show a hemispheric asymmetry of the solar activity. The northern hemisphere dominance is coincident with the first sunspot number peak, whereas the second peak occurs concurrently with the increase in the activity at the south. The polar emission reflects the presence of coronal holes at both EUV wavelengths, moreover, the 17 GHz polar brightenings can be associated with the coronal holes. Until 2013, both EUV coronal holes and radio polar brightenings were more predominant at the south pole.Since then they have not been apparent in the north, but thus appear in the beginning of 2015 in the south as observed in the synoptic charts. Conclusions: This work strengthens the association between coronal holes and the 17 GHz polar brightenings as it is evident in the

  9. Extreme-ultraviolet radiation transport in small scale length laser-produced tin plasmas

    NASA Astrophysics Data System (ADS)

    Sequoia, Kevin Lamar Williams

    The majority of the studies on laser-produced plasmas as an efficient extreme ultraviolet (EUV) light source have focused on relatively large plasmas produced at large laser facilities. However, to develop a commercially viable light source for EUV lithography, much smaller lasers and hence much smaller plasmas must be employed. Smaller plasmas behave quite differently than large plasmas in that the temperature and density are less uniform, and lateral expansion is more important. These differences affect the energy transport and, in particular, the radiation transport. This work studies the EUV radiation transport in small scale length tin plasmas, focusing on the effects of target geometry and laser pulse duration. Both planar and spherical tin targets were irradiated with an Nd:YAG laser operating at 1.064 microm. Conversion efficiency of laser light to 13.5 nm radiation (in-band), EUV emission spectrum, two-dimensional in-band emission profile, and the plasma electron density were measured experimentally. These measurements provide insight into where the laser is absorbed, where the in-band emission is produced, and how the radiation is transmitted. The plasma evolution in these experiments were simulated with a two-dimensional radiation hydrodynamic code, while the radiation transport and atomic kinetics where modeled with a collisional radiative code. Additional experiments were conducted using planar targets where the pulse duration was varied from 0.5 ns to 16 ns to understand the effects of laser pulse duration. It was found that the optimum plasma temperature for efficient generation and transmission of in-band emission is 20 eV. This is lower than the previously reported optimum temperature of 30 eV. The use of a 1.064 microm heating laser results in overheating of the plasma in a region that is much too dense to transmit the in-band emission. This overheating is necessary for the plasma to reach the optimum temperature in the region where the density is

  10. Computation of reflected images from extreme ultraviolet masks

    NASA Astrophysics Data System (ADS)

    Bollepalli, Srinivas B.; Cerrina, Franco

    1999-06-01

    With EUV lithography emerging as a promising technology for semiconductor device fabrication with critical dimensions extreme ultra violet mask. In particular, we show the effects caused due to diffraction, non-uniformities in the multilayer stack due to substrate defects, and partial spatial coherence. Several simulation examples are presented.

  11. Dynamic range considerations for EUV MAMA detectors. [Extreme UV Multianode Microchannel Array

    NASA Technical Reports Server (NTRS)

    Illing, Rainer M. E.; Bybee, Richard L.; Timothy, J. G.

    1990-01-01

    The multianode microchannel array (MAMA) has been chosen as the detector for two instruments on the ESA/NASA Solar Heliospheric Observatory. The response of the MAMA to the two extreme types of solar spectra, disk and corona, have been modeled with a view toward evaluating dynamic range effects present. The method of MAMA operation is discussed, with emphasis given to modeling the effect of electron cloud charge spreading to several detector anodes and amplifiers (n-fold events). Representative synthetic EUV spectra have been created. The detector response to these spectra is modeled by dissecting the input photon radiation field across the detector array into contributions to the various amplifier channels. The results of this dissection are shown for spectral regions across the entire wavelength region of interest. These results are used to identify regions in which total array photon counting rate or individual amplifier rate may exceed the design limits. This allows the design or operational modes to be tailored to eliminate the problem areas.

  12. Measurement of CO2 laser absorption by tin plasma emanating extreme ultraviolet light for photo-lithography

    NASA Astrophysics Data System (ADS)

    Matsukuma, Hiraku; Yoshida, Kensuke; Hosoda, Tatsuya; Yogo, Akifumi; Fujioka, Shinsuke; Nishihara, Katsunobu; Sunahara, Atsushi; Somekawa, Toshihiro; Nishimura, Hiroaki

    2014-10-01

    Laser-driven tin plasma has been studied as a light source of extreme ultraviolet (EUV) at 13.5 nm (+/- 1% in-band width) for the next-generation semiconductor manufacturing. By using CO2 laser as a driver, high conversion efficiency (CE) has been attained in previous works by optimizing optical thickness for EUV radiation. Radiation hydorodynamic simulation predicts, however, that absorption coefficient for CO2 laser is as high as 50% for a tin plasma generated with a single laser pulse mainly due to short plasma scale. The relatively low absorption is a crucial problem for efficient generation of EUV light. In order to solve this problem and to increase the energy absorption, a double pulse method has been proposed where plasma scale length is extended by pre-pulse irradiation. Therefore, it is important to measure CO2 laser absorption rate precisely in order to optimize plasma conditions. For this purpose we designed an integrating sphere for CO2 laser. Laser absorption was measured for tin plasmas generated under various conditions including target geometries. We will show experimental results and discuss on guidelines for getting higher CE. This study has been partly supported by Strategic Innovation Program for Energy Conservation Technologies in 2013 from New Energy and Industrial Technology Development Organization (NEDO) of Japan.

  13. Alternate charging profiles for the onboard nickel cadmium batteries of the Explorer Platform/Extreme Ultraviolet Explorer

    NASA Technical Reports Server (NTRS)

    Rao, Gopalakrishna M.; Prettyman-Lukoschek, Jill S.

    1995-01-01

    The Explorer Platform/Extreme Ultraviolet Explorer (EP/EUVE) spacecraft power is provided by the Modular Power Subsystems (MPS) which contains three 50 ampere-hour Nickel Cadmium (NiCd) batteries. The batteries were fabricated by McDonnell Douglas Electronics Systems Company, with the cells fabricated by Gates Aerospace Batteries (GAB), Gainesville, Florida. Shortly following launch, the battery performance characteristics showed similar signatures as the anomalous performance observed on both the Upper Atmosphere Research Satellite (UARS) and the Compton Gamma Ray Observatory (CGRO). This prompted the development and implementation of alternate charging profiles to optimize the spacecraft battery performance. The Flight Operations Team (FOT), under the direction of Goddard Space Flight Center's (GSFC) EP/EUVE Project and Space Power Applications Branch have monitored and managed battery performance through control of the battery Charge to Discharge (C/D) ratio and implementation of a Solar Array (SA) offset. This paper provides a brief overview of the EP/EUVE mission, the MPS, the FOT's battery management for achieving the alternate charging profile, and the observed spacecraft battery performance.

  14. An Upper Limit on the Ratio Between the Extreme Ultraviolet and the Bolometric Luminosities of Stars Hosting Habitable Planets

    NASA Astrophysics Data System (ADS)

    Sengupta, Sujan

    2016-06-01

    A large number of terrestrial planets in the classical habitable zone of stars of different spectral types have already been discovered and many are expected to be discovered in the near future. However, owing to the lack of knowledge on the atmospheric properties, the ambient environment of such planets are unknown. It is known that sufficient amount of Extreme Ultraviolet (EUV) radiation from the star can drive hydrodynamic outflow of hydrogen that may drag heavier species from the atmosphere of the planet. If the rate of mass loss is sufficiently high, then substantial amount of volatiles would escape causing the planet to become uninhabitable. Considering energy-limited hydrodynamical mass loss with an escape rate that causes oxygen to escape alongwith hydrogen, an upper limit for the ratio between the EUV and the bolometric luminosities of stars which constrains the habitability of planets around them is presented here. Application of the limit to planet-hosting stars with known EUV luminosities implies that many M-type of stars should not have habitable planets around them.

  15. Design of anamorphic magnification high-numerical aperture objective for extreme ultraviolet lithography by curvatures combination method.

    PubMed

    Liu, Yan; Li, Yanqiu; Cao, Zhen

    2016-06-20

    An anamorphic magnification extreme ultraviolet (EUV) lithographic objective could increase the size of the exposure field at a wafer in the orthogonal scanning direction to improve the throughput of the lithographic system. In this paper, we present a curvatures combination method for an anamorphic magnification EUV lithographic objective with high numerical aperture (NA). This method achieves an anamorphic magnification initial structure by use of the double-curvature surfaces, which are formed by combining the curvatures of the corresponding surfaces into two coaxial spherical systems. A series of control measures is taken to design the two coaxial spherical systems for ensuring the rationalities of the initial structure and the surfaces after combining. The image quality of the anamorphic initial structure is optimized by a gradual optimization process. Finally, as an example, we design an Mx1/4 and My1/8 anamorphic magnification EUV lithographic objective with the presented design method. This objective achieves 0.5 NA and a 26  mm×16.5  mm exposure field at the wafer. The wavefront error RMS reaches 0.06λ (λ=13.5  nm), and the distortion is less than 2.8 nm. The design result proves the availability of the curvatures combination method. PMID:27409118

  16. Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

    NASA Astrophysics Data System (ADS)

    Iida, Susumu; Amano, Tsuyoshi; Hirano, Ryoichi; Terasawa, Tsuneo; Watanabe, Hidehiro

    2013-04-01

    According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-and-space patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask.

  17. Optimization of a gas discharge plasma source for extreme ultraviolet interference lithography at a wavelength of 11 nm

    NASA Astrophysics Data System (ADS)

    Bergmann, K.; Danylyuk, S. V.; Juschkin, L.

    2009-10-01

    In this work, we report about the optimization of the spectral emission characteristic of a gas discharge plasma source for high-resolution extreme ultraviolet (EUV) interference lithography based on achromatic Talbot self-imaging. The working parameters of the source are optimized to achieve a required narrowband emission spectrum and to fulfill the necessary coherence and intensity requirements. The intense 4f-4d transitions around 11 nm in a highly ionized (Xe8+-Xe12+) xenon plasma are chosen to provide the working wavelength. This allows us to increase the available radiation intensity in comparison with an in-band EUV xenon emission at 13.5 nm and opens up the possibility to strongly suppress the influence of the 5p-4d transitions at wavelengths between 12 and 16 nm utilizing a significant difference in conditions for optical thickness between 4f-4d and 5p-4d transitions. The effect is achieved by using the admixture of argon to the pinch plasma, which allows keeping the plasma parameters approximately constant while, at the same time, reducing the density of xenon emitters. It is demonstrated that with this approach it is possible to achieve a high intensity 11 nm EUV radiation with a bandwidth of 3%-4% without the use of multilayer mirrors or other additional spectral filters in the vicinity of the working wavelength. The achieved radiation parameters are sufficient for high-performance interference lithography based on the achromatic Talbot effect.

  18. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus; John, Joachim; Malinowski, Pawel E.

    2009-09-15

    We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky-photodiode-based detectors. AlGaN layers were grown using metal-organic chemical vapor deposition (MOCVD) on Si(111) wafers. The diodes were characterized at a wavelength of 13.5 nm using a table-top extreme-ultraviolet (EUV) radiation source, consisting of a laser-produced xenon plasma and a Schwarzschild objective. The responsivity of the diodes was tested between EUV energies ranging from 320 nJ down to several picojoules. For low fluences, a linear responsivity of 7.14 mAs/J could be determined. Saturation starts at approximately 1 nJ, merging into a linear response of 0.113 mAs/J, which could be attributed to the photoeffect on the Au electrodes on top of the diode. Furthermore, degradation tests were performed up to an absolute dose of 3.3x10{sup 19} photons/cm{sup 2}. AlGaN photodiodes were compared to commercially available silicon-based photodetectors. For AlGaN diodes, responsivity does not change even for the highest EUV dose, whereas the response of the Si diode decreases linearly to {approx}93% after 2x10{sup 19} photons/cm{sup 2}.

  19. Direct photo-etching of poly(methyl methacrylate) using focused extreme ultraviolet radiation from a table-top laser-induced plasma source

    SciTech Connect

    Barkusky, Frank; Peth, Christian; Bayer, Armin; Mann, Klaus

    2007-06-15

    In order to perform material interaction studies with intense extreme ultraviolet (EUV) radiation, a Schwarzschild mirror objective coated with Mo/Si multilayers was adapted to a compact laser-based EUV plasma source (pulse energy 3 mJ at {lambda}=13.5 nm, plasma diameter {approx}300 {mu}m). By 10x demagnified imaging of the plasma a pulse energy density of {approx}75 mJ/cm{sup 2} at a pulse length of 6 ns can be achieved in the image plane of the objective. As demonstrated for poly(methyl methacrylate) (PMMA), photoetching of polymer surfaces is possible at this EUV fluence level. This paper presents first results, including a systematic determination of PMMA etching rates under EUV irradiation. Furthermore, the contribution of out-of-band radiation to the surface etching of PMMA was investigated by conducting a diffraction experiment for spectral discrimination from higher wavelength radiation. Imaging of a pinhole positioned behind the plasma accomplished the generation of an EUV spot of 1 {mu}m diameter, which was employed for direct writing of surface structures in PMMA.

  20. Near-resonant four-wave mixing of attosecond extreme-ultraviolet pulses with near-infrared pulses in neon: Detection of electronic coherences

    NASA Astrophysics Data System (ADS)

    Cao, Wei; Warrick, Erika R.; Fidler, Ashley; Leone, Stephen R.; Neumark, Daniel M.

    2016-08-01

    Coherent narrow-band extreme-ultraviolet (EUV) light is generated by a near-resonant four-wave mixing (FWM) process between attosecond pulse trains and near-infrared pulses in neon gas. The near-resonant FWM process involves one vacuum-ultraviolet (VUV) photon and two near-infrared (NIR) photons and produces new higher-energy frequency components corresponding to the n s /n d to ground-state (2 s22 p6) transitions in the neon atom. The EUV emission exhibits small angular divergence (2 mrad) and monotonically increasing intensity over a pressure range of 0.5-16 Torr, suggesting phase matching in the production of the narrow-bandwidth coherent EUV light. In addition, time-resolved scans of the NIR nonlinear mixing process reveal the detection of a persistent, ultrafast bound electronic wave packet based on a coherent superposition initiated by the VUV pulse in the neon atoms. This FWM process using attosecond pulses offers a means for both efficient narrow-band EUV source generation and time-resolved investigations of ultrafast dynamics.

  1. Metrology of 13-nm optics for extreme ultraviolet lithography

    SciTech Connect

    Beckwith, J.F.; Patterson, S.R.; Thompson, D.C.; Badami, V.; Smith, S.

    1997-02-03

    This report documents activities carried in support of the design and construction of an ultra-high precision measuring machine intended for the support of Extreme Ultraviolet Lithography development (for semiconductor fabrication). At the outset, this project was aimed at the overall fabrication of such a measuring machine. Shortly after initiation, however, the scope of activities was reduced and effort was concentrated on the key technical advances necessary to support such machine development: high accuracy surface sensing and highly linear distance interferometry.

  2. Grating configurations to compress extreme-ultraviolet ultrashort pulses.

    PubMed

    Frassetto, Fabio; Poletto, Luca

    2015-09-10

    It is here discussed the design of ultrafast extreme-ultraviolet (XUV) grating compressors that can be used to condition the spectral phase of ultrashort chirped pulses to compensate for the phase chirp and get closer to the Fourier limit. We discuss the two configurations that can be used to realize the compressor, the classical diffraction mount, and the off-plane one. The concept is applied to the realization of a XUV compressor with applications to free-electron lasers. PMID:26368974

  3. EUV lithography

    NASA Astrophysics Data System (ADS)

    Kemp, Kevin; Wurm, Stefan

    2006-10-01

    Extreme ultraviolet lithography (EUVL) technology and infrastructure development has made excellent progress over the past several years, and tool suppliers are delivering alpha tools to customers. However, requirements in source, mask, optics, and resist are very challenging, and significant development efforts are still needed to support beta and production-level performance. Some of the important advances in the past few years include increased source output power, tool and optics system development and integration, and mask blank defect reduction. For example, source power has increased to levels approaching specification, but reliable source operation at these power levels has yet to be fully demonstrated. Significant efforts are also needed to achieve the resolution, line width roughness, and photospeed requirements for EUV photoresists. Cost of ownership and extendibility to future nodes are key factors in determining the outlook for the manufacturing insertion of EUVL. Since wafer throughput is a critical cost factor, source power, resist sensitivity, and system design all need to be carefully considered. However, if the technical and business challenges can be met, then EUVL will be the likely technology of choice for semiconductor manufacturing at the 32, 22, 16 and 11 nm half-pitch nodes. To cite this article: K. Kemp, S. Wurm, C. R. Physique 7 (2006).

  4. The EUVE proposal database and scheduling system

    NASA Technical Reports Server (NTRS)

    Christian, C.; Olson, E.; Jelinsky, P.; Samuel, M.

    1992-01-01

    The proposal database and scheduling system for the Extreme Ultraviolet Explorer will be described. The proposal database has been implemented to take input for approved observations selected by the EUVE Peer Review Panel and output target information suitable for the scheduling system to digest. The scheduling system is a hybrid of the SPIKE program and EUVE software which checks spacecraft constraints, produces a proposed schedule and selects spacecraft orientations with optimal configurations for acquiring star trackers, etc. This system has been used to schedule the In Orbit Calibration activities that took place this summer, following the EUVE launch in early June 1992. The implemented strategy has implications for the selection of approved targets, which have impacted the Peer Review process. In addition, it will be discussed how the proposal database, founded on Sybase, controls the processing of EUVE Guest Observer data.

  5. Ultraviolet and extreme ultraviolet spectroscopy of the solar corona at the Naval Research Laboratory.

    PubMed

    Moses, J D; Ko, Y-K; Laming, J M; Provornikova, E A; Strachan, L; Beltran, S Tun

    2015-11-01

    We review the history of ultraviolet and extreme ultraviolet spectroscopy with a specific focus on such activities at the Naval Research Laboratory and on studies of the extended solar corona and solar-wind source regions. We describe the problem of forecasting solar energetic particle events and discuss an observational technique designed to solve this problem by detecting supra-thermal seed particles as extended wings on spectral lines. Such seed particles are believed to be a necessary prerequisite for particle acceleration by heliospheric shock waves driven by a coronal mass ejection. PMID:26560611

  6. Preliminary Results of the Extreme Ultraviolet Explorer Right Angle Program

    NASA Astrophysics Data System (ADS)

    McDonald, K.; Craig, N.; Sirk, M. M.; Drake, J. J.; Malina, R. F.

    1993-12-01

    During the guest observer phase of the EUVE Mission, data are being collected with the survey scanners and the Deep Survey Scanner. The EUVE Right Angle Program (RAP) involves the analysis of this data set and the coordination of possible simultaneous observations with ground based instruments. This data set consists of several discrete pointings performed at a much deeper level than the previous EUVE all-sky survey, although covering only a few percent of the sky. Analysis of this data set has detected a large number of previously undetected EUV sources. We present here a preliminary list of the sources observed during the EUVE Right Angle Program and compare properties of this list with properties of the EUVE Bright Source List. This work has been supported by NASA contract NAS5--30180.

  7. Analysis of Cassini UVIS Extreme and Far Ultraviolet Observations of Saturn’s Atmosphere

    NASA Astrophysics Data System (ADS)

    Parkinson, Christopher D.; Koskinen, Tommi; Gronoff, Guillaume; Yung, Yuk L.; Esposito, Larry

    2015-11-01

    The atmosphere of Saturn is mainly composed of H2 and neutral atomic helium. The study of He 584 Å and H Lyman-α brightnesses is interesting as the EUV and FUV (Extreme and Far Ultraviolet) planetary airglow have the potential to yield useful information about mixing and other important parameters in its thermosphere. Time variation, asymmetries, and polar enhancement of the airglow are also possible and analysis already performed using the public archived Cassini mission data sets have shown we can solve some of the outstanding problems associated with these phenomena for Saturn.Specifically, we have (1) examined epochal eddy mixing disparities in the Saturnian upper atmosphere and quantify temporal mixing variations that may have occurred in the upper atmosphere of Saturn, as may be evidenced in Cassini mission data, (2) quantified any enhanced mixing in the auroral regions of Saturn, and (3) performed a robust study of Saturnian H Lyman-α brightness with the view to discover any longitudinal H Lyman-α planetary asymmetry or “bulge” across the disc such as was discovered by Voyager at Jupiter, indicative of the distribution of atomic H and accounting for the observed flux and any variations from the normal temperature profile.We have analyzed Cassini UVIS EUV and FUV airglow data from Saturn using sophisticated photochemical and radiative transfer models to investigate unexplained differences in the dynamical processes operating within its upper atmosphere. Powerful analysis techniques allow us to extract information on atmospheric mixing, temperatures, and temporal changes due to the solar and seasonal cycles from the variations in distribution and intensity of airglow emissions that result. We report on results of these efforts to date.

  8. Tin removal from extreme ultraviolet collector optics by inductively coupled plasma reactive ion etching

    SciTech Connect

    Shin, H.; Srivastava, S. N.; Ruzic, D. N.

    2008-05-15

    Tin (Sn) has the advantage of delivering higher conversion efficiency compared to other fuel materials (e.g., Xe or Li) in an extreme ultraviolet (EUV) source, a necessary component for the leading next generation lithography. However, the use of a condensable fuel in a lithography system leads to some additional challenges for maintaining a satisfactory lifetime of the collector optics. A critical issue leading to decreased mirror lifetime is the buildup of debris on the surface of the primary mirror that comes from the use of Sn in either gas discharge produced plasma (GDPP) or laser produced plasma (LPP). This leads to a decreased reflectivity from the added material thickness and increased surface roughness that contributes to scattering. Inductively coupled plasma reactive ion etching with halide ions is one potential solution to this problem. This article presents results for etch rate and selectivity of Sn over SiO{sub 2} and Ru. The Sn etch rate in a chlorine plasma is found to be much higher (of the order of hundreds of nm/min) than the etch rate of other materials. A thermally evaporated Sn on Ru sample was prepared and cleaned using an inductively coupled plasma etching method. Cleaning was confirmed using several material characterization techniques. Furthermore, a collector mock-up shell was then constructed and etching was performed on Sn samples prepared in a Sn EUV source using an optimized etching recipe. The sample surface before and after cleaning was analyzed by atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy. The results show the dependence of etch rate on the location of Sn samples placed on the collector mock-up shell.

  9. THE FIRST STRAY LIGHT CORRECTED EXTREME-ULTRAVIOLET IMAGES OF SOLAR CORONAL HOLES

    SciTech Connect

    Shearer, Paul; Gilbert, Anna C.; Frazin, Richard A.; Hero III, Alfred O. E-mail: annacg@umich.edu E-mail: hero@umich.edu

    2012-04-10

    Coronal holes are the source regions of the fast solar wind, which fills most of the solar system volume near the cycle minimum. Removing stray light from extreme-ultraviolet (EUV) images of the Sun's corona is of high astrophysical importance, as it is required to make meaningful determinations of temperatures and densities of coronal holes. EUV images tend to be dominated by the component of the stray light due to the long-range scatter caused by the microroughness of telescope mirror surfaces, and this component has proven very difficult to measure in pre-flight characterization. In-flight characterization heretofore has proven elusive due to the fact that the detected image is simultaneously nonlinear in two unknown functions: the stray light pattern and the true image that would be seen by an ideal telescope. Using a constrained blind deconvolution technique that takes advantage of known zeros in the true image provided by a fortuitous lunar transit, we have removed the stray light from solar images seen by the EUVI instrument on STEREO-B in all four filter bands (171, 195, 284, and 304 A). Uncertainty measures of the stray light corrected images, which include the systematic error due to misestimation of the scatter, are provided. It is shown that in EUVI, stray light contributes up to 70% of the emission in coronal holes seen on the solar disk, which has dramatic consequences for diagnostics of temperature and density and therefore estimates of key plasma parameters such as the plasma {beta} and ion-electron collision rates.

  10. Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications

    SciTech Connect

    Naulleau, P. P.; George, Simi A.

    2009-02-13

    Line-edge roughness (LER) and the related effect of contact size variation remain as significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can indeed be an important contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam (see Fig. 1). The latter effect is especially important as higher coherence off-axis illumination conditions are used and defocus is considered. Here we describe these effect in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Figure 2 shows modeling results for 22-nm lines printed in a 0.32-numerical aperture system with 100-nm defocus assuming a mask with 0.24-nm rms multilayer roughness and no absorber edge roughness (unlike the example in Fig. 1). The impact of the phase roughness on the printed line-edge roughness is clearly evident and demonstrates the basic problem with mask roughness. The more detailed modeling-based analysis to be presented will account for performance throughout the process window as well as non-stochastic resist effects. We note that the mean-field resist effect is important to consider because, in practice, the resist is the limiting resolution element in the system and therefore dominates the mask-error enhancement factor (MEEF). As is typically the case with projection-optic-induced MEEF, the resist-induced MEEF will lead to even tighter mask requirements. Note that we do not consider resist stochastic effects since the purpose of this study is isolate mask-induced sources of image-plane roughness.

  11. Peculiar Stationary EUV Wave Fronts in the Eruption on 2011 May 11

    NASA Astrophysics Data System (ADS)

    Chandra, R.; Chen, P. F.; Fulara, A.; Srivastava, A. K.; Uddin, W.

    2016-05-01

    We present and interpret the observations of extreme ultraviolet (EUV) waves associated with a filament eruption on 2011 May 11. The filament eruption also produces a small B-class two ribbon flare and a coronal mass ejection. The event is observed by the Solar Dynamic Observatory with high spatio-temporal resolution data recorded by the Atmospheric Imaging Assembly. As the filament erupts, we observe two types of EUV waves (slow and fast) propagating outwards. The faster EUV wave has a propagation velocity of ∼500 km s‑1 and the slower EUV wave has an initial velocity of ∼120 km s‑1. We report, for the first time, that not only does the slower EUV wave stop at a magnetic separatrix to form bright stationary fronts, but also the faster EUV wave transits a magnetic separatrix, leaving another stationary EUV front behind.

  12. Exploring EUV Spicules Using 304 Angstrom He II Data from SDO AIA

    NASA Technical Reports Server (NTRS)

    Snyder, Ian R.; Sterling, Alphonse C.; Falconer, David A.; Moore, Ron L.

    2014-01-01

    We present results from a statistical study of He II 304 Angstrom Extreme Ultraviolet (EUV) spicules at the limb of the Sun. We also measured properties of one macrospicule; macrospicules are longer than most spicules, and much broader in width than spicules. We use high-cadence (12 second) and high-resolution (0.6 arcseconds pixels) resolution data from the Atmospheric Imaging Array (AIA) instrument on the Solar Dynamic Observatory (SDO). All of the observed events occurred near the solar north pole, where quiet Sun or coronal hole environments ensued. We examined the maximum lengths, maximum rise velocities, and lifetimes of 33 Extreme Ultraviolet (EUV) spicules and the macrospicule. For the bulk of the Extreme Ultraviolet (EUV) spicules these quantities are, respectively, approximately 10,000-40,000 kilometers, 20-100 kilometers per second, and approximately 100- approximately 1000 seconds. For the macrospicule the corresponding quantities were respectively approximately 60,000 kilometers, approximately 130 kilometers per second, approximately 1800 seconds, which is typical of macrospicules measured by other workers. Therefore macrospicules are taller, longer-lived, and faster than most Extreme Ultraviolet (EUV) spicules. The rise profiles of both the spicules and the macrospicules match well a second-order ("parabolic" ) trajectory, although the acceleration was often weaker than that of solar gravity in the profiles fitted to the trajectories. Our macrospicule also had an obvious brightening at its base at birth, while such brightening was not apparent for the Extreme Ultraviolet (EUV) spicules. Most of the Extreme Ultraviolet (EUV) spicules remained visible during their descent back to the solar surface, although a small percentage of the spicules and the macrospicule faded out before falling back to the surface. Our sample of macrospicules is not yet large enough to determine whether their initiation mechanism is identical to that of Extreme Ultraviolet (EUV

  13. Concept Study Report: Extreme-Ultraviolet Imaging Spectrometer Solar-B

    NASA Technical Reports Server (NTRS)

    Doschek, George, A.; Brown, Charles M.; Davila, Joseph M.; Dere, Kenneth P.; Korendyke, Clarence M.; Mariska, John T.; Seely, John F.

    1999-01-01

    We propose a next generation Extreme-ultraviolet Imaging Spectrometer (EIS) that for the first time combines high spectral, spatial, and temporal resolution in a single solar spectroscopic instrument. The instrument consists of a multilayer-coated off-axis telescope mirror and a multilayer-coated grating spectrometer. The telescope mirror forms solar images on the spectrometer entrance slit assembly. The spectrometer forms stigmatic spectra of the solar region located at the slit. This region is selected by the articulated telescope mirror. Monochromatic images are obtained either by rastering the solar region across a narrow entrance slit, or by using a very wide slit (called a slot) in place of the slit. Monochromatic images of the region centered on the slot are obtained in a single exposure. Half of each optic is coated to maximize reflectance at 195 Angstroms; the other half to maximize reflectance at 270 Angstroms. The two Extreme Ultraviolet (EUV) wavelength bands have been selected to maximize spectral and dynamical and plasma diagnostic capabilities. Spectral lines are observed that are formed over a temperature range from about 0.1 MK to about 20 MK. The main EIS instrument characteristics are: wavelength bands - 180 to 204 Angstroms; 250 to 290 Angstroms; spectral resolution - 0.0223 Angstroms/pixel (34.3km/s at 195 Angstroms and 23.6 km/s at 284 Angstroms); slit dimensions - 4 slits, two currently specified dimensions are 1" x 1024" and 50" x 1024" (the slot); largest spatial field of view in a single exposure - 50" x 1024"; highest time resolution for active region velocity studies - 4.4 s.

  14. DIAGNOSTIC LINE EMISSION FROM EXTREME ULTRAVIOLET AND X-RAY-ILLUMINATED DISKS AND SHOCKS AROUND LOW-MASS STARS

    SciTech Connect

    Hollenbach, David; Gorti, U.

    2009-10-01

    Extreme ultraviolet (EUV; 13.6 eV EUV luminosity and spectral shape, X-ray luminosity and spectral shape, and wind mass loss rate and shock speed. Comparing our models with observations, we conclude that either internal shocks in the winds or X-rays incident on the disk surfaces often produce the observed [Ne II] line, although there are cases where EUV may dominate. Shocks created by the oblique interaction of winds with disks are unlikely [Ne II] sources because these shocks are too weak to ionize Ne. Even if [Ne II] is mainly produced by X-rays or internal wind shocks, the neon observations typically place upper limits of {approx}<10{sup 42} s{sup -1} on the EUV photon luminosity of these young low-mass stars. The observed [O I] 6300 A line has both a low velocity component (LVC) and a high velocity component. The latter likely arises in internal wind shocks. For the former we find that X-rays likely produce more [O I] luminosity than either the EUV layer, the transition layer between the EUV and X-ray layer, or the shear layer where the protostellar wind shocks and entrains disk material in a radial flow across the surface of the disk. Our soft X-ray models produce [O I] LVCs with luminosities up to 10{sup -4} L{sub sun}, but may not be able to explain the most luminous LVCs.

  15. Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme ultraviolet lithography applications

    SciTech Connect

    Mirkarimi, P.B., LLNL

    1998-02-20

    Due to the stringent surface figure requirements for the multilayer-coated optics in an extreme ultraviolet (EUV) projection lithography system, it is desirable to minimize deformation due to the multilayer film stress. However, the stress must be reduced or compensated without reducing EUV reflectivity, since the reflectivity has a strong impact on the throughput of a EUV lithography tool. In this work we identify and evaluate several leading techniques for stress reduction and compensation as applied to Mo/Si and Mo/Be multilayer films. The measured film stress for Mo/Si films with EUV reflectances near 67.4% at 13.4 nm is approximately - 420 MPa (compressive), while it is approximately +330 MPa (tensile) for Mo/Be films with EUV reflectances near 69.4% at 11.4 nm. Varying the Mo-to-Si ratio can be used to reduce the stress to near zero levels, but at a large loss in EUV reflectance (> 20%). The technique of varying the base pressure (impurity level) yielded a 10% decrease in stress with a 2% decrease in reflectance for our multilayers. Post-deposition annealing was performed and it was observed that while the cost in reflectance is relatively high (3.5%) to bring the stress to near zero levels (i.e., reduce by 1 00%), the stress can be reduced by 75% with only a 1.3% drop in reflectivity at annealing temperatures near 200{degrees}C. A study of annealing during Mo/Si deposition was also performed; however, no practical advantage was observed by heating during deposition. A new non-thermal (athermal) buffer-layer technique was developed to compensate for the effects of stress. Using this technique with amorphous silicon and Mo/Be buffer-layers it was possible to obtain Mo/Be and Mo/Si multilayer films with a near zero net film stress and less than a 1% loss in reflectivity. For example a Mo/Be film with 68.7% reflectivity at 11.4 nm and a Mo/Si film with 66.5% reflectivity at 13.3 nm were produced with net stress values less than 30 MPa.

  16. Condenser for ring-field deep ultraviolet and extreme ultraviolet lithography

    DOEpatents

    Chapman, Henry N.; Nugent, Keith A.

    2002-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated or converging beam at grazing incidence. The ripple plate comprises a flat or curved plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  17. Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography

    DOEpatents

    Chapman, Henry N.; Nugent, Keith A.

    2001-01-01

    A condenser for use with a ring-field deep ultraviolet or extreme ultraviolet lithography system. A condenser includes a ripple-plate mirror which is illuminated by a collimated beam at grazing incidence. The ripple plate comprises a plate mirror into which is formed a series of channels along an axis of the mirror to produce a series of concave surfaces in an undulating pattern. Light incident along the channels of the mirror is reflected onto a series of cones. The distribution of slopes on the ripple plate leads to a distribution of angles of reflection of the incident beam. This distribution has the form of an arc, with the extremes of the arc given by the greatest slope in the ripple plate. An imaging mirror focuses this distribution to a ring-field arc at the mask plane.

  18. Data processing of solar EUV instruments on the METEOR satellite

    NASA Technical Reports Server (NTRS)

    Brown, Hipook

    1995-01-01

    The Multiple Experiment Transporter into Earth Orbit and Return-Solar EUV Experiment (METEOR-SEE) project will take daily extreme ultraviolet (EUV) irradiance spectra starting in the summer of 1995. The METEOR-SEE package consists of an EUV grating spectrograph (EGS) and a cluster of 5 soft x-ray photometers (XP's). Both these instruments have flown previously on NASA sounding rockets. Because of the scope of the project, new data processing algorithms had to be developed for the SEE instruments onboard the METEOR satellite. An overview of the data flow describes how satellite data are collected and processed. Detailed descriptions of specific routines will show what data processing entails.

  19. An Extreme Flux Vacuum Ultraviolet/Ultraviolet Beamline For The Measurement Of Biological Circular Dichroism

    SciTech Connect

    Clarke, D.T.; Vasanthi, N.; Shaw, D.; Brown, A.; Todd, B.; Grant, A.F.; Flaherty, J.V.; Mullacrane, I.D.; Miller, M.J.; Bowler, M.A.; Jones, G.R.; Mythen, C.

    2004-05-12

    A new extreme flux vacuum ultraviolet bending magnet beamline (CD12) has been commission at the SRS, Daresbury. The beamline has met all of its designed performance parameters and these are detailed. The clear advantages of SRCD over CD undertaken on conventional instruments are discussed and examples of its capabilities in terms of measurement precision and enhanced signal-to-noise for both steady-state CD and time-resolved CD are given.

  20. The solar extreme ultra-violet corona: Resolved loops and the unresolved active region corona

    NASA Astrophysics Data System (ADS)

    Cirtain, Jonathan Wesley

    In this work, physical characteristics of the solar corona as observed in the Extreme Ultra-Violet (EUV) regime are investigated. The focus will be the regions of intense EUV radiation generally found near the locations of sunspots. These regions are commonly called active regions. Multiple space- based observing platforms have been deployed in the last decade; it is possible to use several of these observatories in combination to develop a more complete picture of the solar corona. Joint Observing Program 146 was created to collect spectroscopic intensities using the Coronal Diagnostic Spectrometer on Solar and Heliospheric Observatory and EUV images using NASA's Transition Region and Coronal Explorer. The emission line intensities are analyzed to develop an understanding of the temperature and density of the active region coronal plasma. However, the performance of the CDS instrument in the spatial and temporal domains is limited and to compensate for these limitations, data collected by the TRACE instrument provide a high spatial and temporal resolution set of observations. One of the most exciting unsolved problems in solar astrophysics is to understand why the corona maintains a temperature roughly two orders of magnitude higher than the underlying material. A detailed investigation of the coronal emission has provided constraints on models of the heating mechanism, since the temperature, density and evolution of emission rates for multiple ionic species are indicative of the mechanism(s) working to heat the corona. The corona appears to consist of multiple unresolved structures as well as resolved active region structures, called coronal loops. The purpose of the present work is to determine the characteristics of the unresolved background corona. Using the characterizations of the coronal unresolved background, results for loops after background subtraction are also presented. This work demonstrates the magnitude of the unresolved coronal emission with

  1. The EUVE Right Angle Program (RAP)

    NASA Astrophysics Data System (ADS)

    Sommers, J.; Christian, D.; Craig, N.; Jessop, H.; Stroozas, B.

    1996-05-01

    The Extreme Ultraviolet Explorer (EUVE ) has three scanning telescopes that observe in a direction perpendicular to that of the primary guest observer (GO) telescope---the Deep Survey/Spectrometer (DS/S). During the first 6 months of the EUVE mission, the scanning telescopes were used to conduct an all-sky survey consisting of short exposures ( ~ 500 s) of the entire sky between 58--740 Angstroms . These telescopes are now being used during GO observations to conduct simultaneous long exposure (typically 40+ ks) observations as part of the very successful---and publicly accessible---EUVE Right Angle Program (RAP). To date, the EUVE RAP has provided photometric and timing data on late-type stars and CVs and has been responsible for detecting dozens of previously unknown extreme ultraviolet sources, including many stars without optical counterparts. This poster presents some of the exciting results found with EUVE RAP data, along with general information about the program and instructions for submitting RAP proposals. This work is supported by NASA contract NAS5-29298.

  2. Berkeley extreme-ultraviolet airglow rocket spectrometer - BEARS

    NASA Technical Reports Server (NTRS)

    Cotton, D. M.; Chakrabarti, S.

    1992-01-01

    The Berkeley EUV airglow rocket spectrometer (BEARS) instrument is described. The instrument was designed in particular to measure the dominant lines of atomic oxygen in the FUV and EUV dayglow at 1356, 1304, 1027, and 989 A, which is the ultimate source of airglow emissions. The optical and mechanical design of the instrument, the detector, electronics, calibration, flight operations, and results are examined.

  3. Low density of neutral hydrogen and helium in the local interstellar medium: Extreme Ultraviolet Explorer photometry of the Lyman continuum of the hot white dwarfs MCT 0501-2858, MCT 0455-2812, HZ 43, and GD 153.

    PubMed

    Vennes, S; Dupuis, J; Bowyer, S; Fontaine, G; Wiercigroch, A; Jelinsky, P; Wesemael, F; Malina, R

    1994-01-20

    The first comprehensive sky survey of the extreme ultraviolet (EUV) spectral range performed by the Extreme Ultraviolet Explorer (EUVE) has uncovered a handful of very bright sources at wavelengths longer than the He I 504 angstroms photoionization edge. Among these objects are four white dwarfs with exceptionally low interstellar medium (ISM) column densities along the line of sight. Analysis of EUV photometry of the He-rich DO white dwarf MCT 0501-2858 and the H-rich DA white dwarf MCT 0455-2812 along one line of sight and of the DA white dwarfs HZ 43 and GD 153 near the north Galactic pole indicates that the overall minimum column density of the neutral material centered on the Sun is N(H I)= 0.5-1.0 x 10(18) cm-2. In the case of MCT 0501-2858, EUV photometric measurements provide a clear constraint to the effective temperature (60,000-70,000 K). Given these neutral hydrogen columns, the actual contribution to the density of neutral species from the immediate solar environment (the "local fluff") would only cover a distance of approximately 2-3 pc (assuming an average density n(H I) = 0.1 cm-3) leaving these lines of sight almost entirely within the hot phase of the ISM. A preliminary examination of the complete EUVE long-wavelength survey indicates that these lines of sight are exceptional and set a minimum column density in the solar environment. PMID:11539405

  4. Low density of neutral hydrogen and helium in the local interstellar medium: Extreme Ultraviolet Explorer photometry of the Lyman continuum of the hot white dwarfs MCT 0501-2858, MCT 0455-2812, HZ 43, and GD 153

    NASA Technical Reports Server (NTRS)

    Vennes, Stephane; Dupuis, Jean; Bowyer, Stuart; Fontaine, Gilles; Wiercigroch, Alexandria; Jelinsky, Patrick; Wesemael, Francois; Malina, Roger

    1994-01-01

    The first comprehensive sky survey of the extreme ultraviolet (EUV) spectral range performed by the Extreme Ultraviolet Explorer (EUVE) has uncovered a handful of very bright sources at wavelengths longer than the He I 504 A photoionization edge. Among these objects are four white dwarfs with exceptionally low interstellar medium (ISM) column densities along the line of sight. Analysis of EUV photometry of the He-rich DO white dwarf MCT 0501-2858 and the H-rich DA white dwarf MCT 0455-2812 along one line of sight and of the DA white dwarfs HZ 43 and GD 153 near the north Galactic pole indicates that the overall minimum column density of the neutral material centered on the Sun is N(H I) = 0.5-1.0 x 10(exp 18)/sq cm. In the case of MCT 0501-2858, EUV photometric measurements provide a clear constraint to the effective temperature (60,000-70,000 K). Given these neutral hydrogen columns, the actual contribution to the density of neutral species from the immediate solar environment (the 'local fluff') would only cover a distance of approximately equals 2-3 pc (assuming an average density n(H I) = 0.1/cu cm) leaving these lines of sight almost entirely within the hot phase of the ISM. A preliminary examination of the complete EUVE long-wavelength survey indicates that these lines of sight are exceptional and set a minimum column density in the solar environment.

  5. Determining the Critcial Size of EUV Mask Substrate Defects

    SciTech Connect

    Mccall, Monnikue M; Han, Hakseung; Cho, Wonil; Goldberg, Kenneth; Gullikson, Eric; Jeon, Chan-Uk; Wurm, Stefan

    2008-02-28

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tool. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  6. Determining the critical size of EUV mask substrate defects

    SciTech Connect

    Goldberg, Kenneth A.; Gullikson, Eric M.; Han, Hakseung; Cho, Wonil; Jeon, Chan-Uk; Wurm, Stefan

    2008-05-26

    Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting multilayer stack is an important issue in EUVL lithography. Several simulation studies have been performed in the past to determine the tolerable defect size on EUV mask blank substrates but the industry still has no exact specification based on real printability tests. Therefore, it is imperative to experimentally determine the printability of small defects on a mask blanks that are caused by substrate defects using direct printing of programmed substrate defect in an EUV exposure tools. SEMATECH fabricated bump type program defect masks using standard electron beam lithography and performed printing tests with the masks using an EUV exposure tool. Defect images were also captured using SEMATECH's Berkeley Actinic Imaging Tool in order to compare aerial defect images with secondary electron microscope images from exposed wafers. In this paper, a comprehensive understanding of substrate defect printability will be presented and printability specifications of EUV mask substrate defects will be discussed.

  7. Extreme ultraviolet emission spectra of Gd and Tb ions

    SciTech Connect

    Kilbane, D.; O'Sullivan, G.

    2010-11-15

    Theoretical extreme ultraviolet emission spectra of gadolinium and terbium ions calculated with the Cowan suite of codes and the flexible atomic code (FAC) relativistic code are presented. 4d-4f and 4p-4d transitions give rise to unresolved transition arrays in a range of ions. The effects of configuration interaction are investigated for transitions between singly excited configurations. Optimization of emission at 6.775 nm and 6.515 nm is achieved for Gd and Tb ions, respectively, by consideration of plasma effects. The resulting synthetic spectra are compared with experimental spectra recorded using the laser produced plasma technique.

  8. Tabletop Extreme Ultraviolet Spectroscopy of Element-Specific Organometallic Photophysics

    NASA Astrophysics Data System (ADS)

    Vura-Weis, Josh

    High-harmonic extreme ultraviolet (XUV) spectroscopy has the potential to provide the elemental, oxidation-state, and spin-state specificity of core-level spectroscopy with the convenience and ultrafast time resolution of tabletop laser sources. We will show that M-edge spectroscopy of first-row transition metal complexes (3p -->3d excitation) is a sensitive probe of the electronic structure of organometallic complexes in solution. Furthermore, this technique can be used to determine the relaxation dynamics of these molecules in the first few femtoseconds to nanoseconds after photoexcitation.

  9. High numerical aperture projection system for extreme ultraviolet projection lithography

    DOEpatents

    Hudyma, Russell M.

    2000-01-01

    An optical system is described that is compatible with extreme ultraviolet radiation and comprises five reflective elements for projecting a mask image onto a substrate. The five optical elements are characterized in order from object to image as concave, convex, concave, convex, and concave mirrors. The optical system is particularly suited for ring field, step and scan lithography methods. The invention uses aspheric mirrors to minimize static distortion and balance the static distortion across the ring field width which effectively minimizes dynamic distortion. The present invention allows for higher device density because the optical system has improved resolution that results from the high numerical aperture, which is at least 0.14.

  10. Critical illumination condenser for extreme ultraviolet projection lithography

    NASA Astrophysics Data System (ADS)

    Cohen, S. J.; Seppala, L. G.

    1995-03-01

    A condenser system couples a radiation source to an imaging system. The authors have designed a critical illumination condenser system which meets the technical challenges of extreme ultraviolet projection lithography based on a ring field imaging system and a laser produced plasma source. The optical system, a three spherical mirror optical design, is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. This type of condenser optical design is sufficiently versatile to be employed with two distinct systems, one from Lawrence Livermore National Laboratory and one from AT and T/Sandia.

  11. A rocket measurement of the extreme ultraviolet dayglow

    NASA Technical Reports Server (NTRS)

    Christensen, A. B.

    1976-01-01

    Extreme ultraviolet spectra of the mid-latitude dayglow in the wavelength range of 550 to 1250A have been obtained with a rocket borne grating spectrometer at a resolution of 20A. Spectra were obtained in the altitude range of 140 to 280 km. The spectra are dominated by emissions from atomic multiplets and no molecular bands have been identified with certainty. The strongest emissions other than H Lyman-alpha are OI (989) and OII (834). Other prominent emissions include He I(584), N II(916) and N II(1085). An unexpected feature near 612A has an intensity comparable to He I(584).

  12. Interferometry in the Extreme Ultraviolet and X-Ray

    NASA Technical Reports Server (NTRS)

    Cash, W.; Shipley, A.; Osterman, S.; Joy, M. K.

    2000-01-01

    We report on demonstration of an x-ray interferometer that uses plane mirrors at grazing incidence to create interference fringes in the extreme ultraviolet and soft x-ray portions of the spectrum. X-ray interferometry has historically been implemented through narrow band, diffractive systems that split the wavefront. Our system, by using two separate optical channels to create interference from two areas of the wavefront, has broad band response and much higher efficiency. We discuss some applications of this technique to astronomy and microscopy including the possibility of eventually capturing a micro-arcsecond image of a black hole.

  13. Extreme ultraviolet and visible spectroscopy of promethiumlike heavy ions

    NASA Astrophysics Data System (ADS)

    Kobayashi, Yusuke; Kubota, Kai; Omote, Kazuki; Komatsu, Akihiro; Sakoda, Junpei; Minoshima, Maki; Kato, Daiji; Li, Jiguang; Sakaue, Hiroyuki A.; Murakami, Izumi; Nakamura, Nobuyuki

    2015-08-01

    We present extreme ultraviolet and visible spectra of promethiumlike tungsten and gold obtained with an electron beam ion trap. Although the contributions from a few charge states are involved in the spectra, the charge state of the ion assigned to the observed lines is definitely identified by the time-of-flight (TOF) analysis of the ions performed at the same time with the spectroscopic measurements. Experimental results are compared with collisional-radiative model calculations as well as previous experimental and theoretical studies. Some ambiguous identifications in the previous observations have been clarified owing to the definite identification by the TOF analysis.

  14. Extreme ultraviolet radiation emitted by helium microwave driven plasmas

    NASA Astrophysics Data System (ADS)

    Espinho, S.; Felizardo, E.; Tatarova, E.; Alves, L. L.

    2016-06-01

    The extreme ultraviolet radiation emitted by helium microwave-driven (2.45 GHz) plasmas operating at low-pressure conditions was investigated. Novel data regarding emitted spectral lines of excited helium atoms and ions in the 20-33 nm wavelength range and their intensity behavior with variation of discharge operational conditions are presented. The intensity of all the spectral emissions was found to strongly increase with the microwave power delivered to the plasma. Furthermore, the intensity of the ionic spectral emissions decreases by nearly one order of magnitude as the pressure was raised from 0.2 to 0.5 mbar.

  15. Cleaning process for EUV optical substrates

    SciTech Connect

    Weber, F.J.; Spiller, E.A.

    1999-09-28

    A cleaning process is disclosed for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

  16. Cleaning process for EUV optical substrates

    DOEpatents

    Weber, Frank J.; Spiller, Eberhard A.

    1999-01-01

    A cleaning process for surfaces with very demanding cleanliness requirements, such as extreme-ultraviolet (EUV) optical substrates. Proper cleaning of optical substrates prior to applying reflective coatings thereon is very critical in the fabrication of the reflective optics used in EUV lithographic systems, for example. The cleaning process involves ultrasonic cleaning in acetone, methanol, and a pH neutral soap, such as FL-70, followed by rinsing in de-ionized water and drying with dry filtered nitrogen in conjunction with a spin-rinse.

  17. Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

    NASA Astrophysics Data System (ADS)

    Mojarad, N.; Hojeij, M.; Wang, L.; Gobrecht, J.; Ekinci, Y.

    2015-02-01

    All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ~3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm

  18. Far ultraviolet and extreme ultraviolet rocket instrumentation for measuring the solar spectral irradiance and terrestrial airglow

    NASA Technical Reports Server (NTRS)

    Woods, Thomas N.; Bailey, Scott M.; Solomon, Stanley C.; Rottman, Gary J.

    1992-01-01

    A sounding-rocket experiment is being developed for the study of EUV spectral irradiance and its effects on the upper atmosphere, using three solar EUV instruments devised by the Laboratory for Atmospheric and Space Physics. These include a 25-cm Rowland circle EUV spectrograph, an array of Si X-UV photodiodes, and an X-UV imager with 20 arcsec resolution of the sun.

  19. Far ultraviolet and extreme ultraviolet rocket instrumentation for measuring the solar spectral irradiance and terrestrial airglow

    NASA Astrophysics Data System (ADS)

    Woods, Thomas N.; Bailey, Scott M.; Solomon, Stanley C.; Rottman, Gary J.

    1992-06-01

    A sounding-rocket experiment is being developed for the study of EUV spectral irradiance and its effects on the upper atmosphere, using three solar EUV instruments devised by the Laboratory for Atmospheric and Space Physics. These include a 25-cm Rowland circle EUV spectrograph, an array of Si X-UV photodiodes, and an X-UV imager with 20 arcsec resolution of the sun.

  20. The Extreme Ultraviolet Explorer and the local interstellar medium

    NASA Technical Reports Server (NTRS)

    Bowyer, Stuart

    1986-01-01

    The EUV Explorer (EUVE) mission is described, with emphasis on the overall capabilities of the instrumentation and the relevance of the mission to determining parameters of the local interstellar medium. The primary purpose of the mission is to search the celestial sphere for astronomical sources of EUV radiation (100-1000 A). The search will be accomplished with the use of three EUV telescopes, sensitive to different segments of the EUV band. A fourth telescope will perform a high-sensitivity search of a limited sample of the sky in the shortest-wavelength bands. The all-sky survey will be carried out in the first six months of the mission. The second six months of the mission, conducted entirely by Guest Investigators selected by NASA, will be devoted to spectroscopic observations of selected EUV sources. The instrumentation is now well developed. The best mirror has full-width/half-energy spread of 8 arcsec and a surface finish of 20 A. Prototype thin-film bandpass filters have been flown on the Space Shuttle and their performance optimized. Prototype detectors have been developed which have 600 by 600-pixel imaging capability and up to 80-percent quantum efficiency in parts of the EUV band.

  1. Low-line edge roughness extreme ultraviolet photoresists of organotin carboxylates

    NASA Astrophysics Data System (ADS)

    Del Re, Ryan; Passarelli, James; Sortland, Miriam; Cardineau, Brian; Ekinci, Yasin; Buitrago, Elizabeth; Neisser, Mark; Freedman, Daniel A.; Brainard, Robert L.

    2015-10-01

    Pure thin films of organotin compounds have been lithographically evaluated using extreme ultraviolet lithography (EUVL, 13.5 nm). Twenty compounds of the type R2Sn) were spin-coated from solutions in toluene, exposed to EUV light, and developed in organic solvents. Exposures produced negative-tone contrast curves and dense-line patterns using interference lithography. Contrast-curve studies indicated that the photosensitivity is linearly related to the molecular weight of the carboxylate group bound to tin. Additionally, photosensitivity was found to be linearly related to free radical stability of the hydrocarbon group bound directly to tin (R=phenyl, butyl, and benzyl). Dense-line patterning capabilities varied, but two resists in particular show exceptionally good line edge roughness (LER). A resist composed of an amorphous film of )SnCC)2 (1) achieved 1.4 nm LER at 22-nm half-pitch patterning and a resist composed of )Sn) (2) achieved 1.1 nm LER at 35-nm half-pitch at high exposure doses (600 mJ/cm2). Two photoresists that use olefin-based carboxylates, )SnCCH (3) and )SnCC (4), demonstrated better photospeeds (5 mJ/cm2 and 27 mJ/cm2) but worse LER.

  2. Structural Characterization and Lifetime Stability of Mo/Y Extreme Ultraviolet Multilayer Mirrors

    SciTech Connect

    Kjornrattanawanich, B; Bajt, S

    2004-05-20

    We observe a dramatic dependence of the extreme ultraviolet (EUV) reflectivity of Mo/Y multilayers on the oxygen content of yttrium. This is explained by a change in microstructure, increase in roughness of the Y layers and not by an increase in absorption due to oxygen in Y layers. We find best reflectivity of 38.4% is achieved with an oxygen content of 25%, which reduces to 32.6% and 29.6% for multilayers manufactured from oxygen free yttrium and 39%-oxygen yttrium, respectively. These results highlight the importance of experimentally determined optical constants as well as interface roughness in multilayer calculations. In addition, lifetime stability of Mo/Y multilayers with different capping layers was monitored for one year. The molybdenum- and palladium-capped samples exhibited low surface roughness and about 4% relative reflectivity loss in one year. The relative reflectivity loss on yttrium-capped sample (yttrium with 39% oxygen) was about 8%. However, the reflectivity loss in all three capping layers occurred within the first 100 days after the deposition and the reflectivity remained stable afterwards.

  3. Phase defect mitigation strategy: fiducial mark requirements on extreme ultraviolet lithography mask

    NASA Astrophysics Data System (ADS)

    Murachi, Tetsunori; Amano, Tsuyoshi; Oh, Sung Hyun

    2012-03-01

    For Extreme Ultra-Violet Lithography (EUVL), fabrication of defect free multi-layered (ML) mask blanks is one of the difficult challenges. ML defects come from substrate defects and adders during ML coating, cannot be removed, and are called as phase defect. If we can accept ML blanks with certain number of phase defects, the blank yield will be drastically up. In order to use such blanks, the phase defects need to be identified and located during ML blank defect inspection before absorber patterning. To locate phase defects on the blanks accurately and precisely, Fiducial Marks (FM) on ML blanks are needed for mask alignment and defect location information. The proposed requirement of defect location accuracy is <=20 nm [1]. In this paper, we will present the result of feasibility study on the requirements of FM on EUVL mask by simulations & experiments to establish the phase defect mitigation method with EUV Actinic Blank Inspection (ABI) tool. And the optimum ranges of FM line width, depth, and fabrication method on EUVL mask based on above results are >= 5 um line width, >= 100 nm depth FM etched into ML respectively, and additional finer FMs for magnified optics.

  4. Extreme ultraviolet and x-ray transition wavelengths in Rb XXIV

    NASA Astrophysics Data System (ADS)

    Indu, Khatri; Arun, Goyal; Sunny, Aggarwal; K. Singh, A.; Man, Mohan

    2015-10-01

    Energy levels, radiative rates, oscillator strengths and line strengths are reported for transitions among the lowest 97 levels of the (1s22s22p6) 3s23p2, 3s23p3d, 3s3p3, 3p4, 3s3p23d, and 3s23d2 configurations of Rb XXIV. A multiconfiguration Dirac-Fock (MCDF) method is adopted for the calculations. Radiative rates, oscillator strengths, and line strengths are provided for all electric dipole (E1), magnetic dipole (M1), electric quadrupole (E2), and magnetic quadrupole (M2) transitions from the ground level to all 97 levels, although calculations are performed for a much larger number of levels. To achieve the accuracy of the data, comparisons are provided with similar data obtained from the Flexible Atomic Code (FAC) and also with the available theoretical and experimental results. Our energy levels are found to be accurate to better than 1.2%. Wavelengths calculated are found to lie in EUV (extreme ultraviolet) and x-ray regions. Additionally, lifetimes for all 97 levels are obtained for the first time. The authors, Indu Khatri and Arun Goyal, were supported by the U. G. C., India for their Junior Research Fellowship and Man Mohan by the U.G.C. for Basic Science Research Fellowship.

  5. A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

    SciTech Connect

    Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.; Talin, Albert Alec

    2003-12-01

    We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresist top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.

  6. Study of extreme-ultraviolet emission and properties of a coronal streamer from PROBA2/SWAP, HINODE/EIS and Mauna Loa Mk4 observations

    SciTech Connect

    Goryaev, F.; Slemzin, V.; Vainshtein, L.; Williams, David R.

    2014-02-01

    Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R {sub ☉}, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 Å band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 R {sub ☉}. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R {sub ☉}, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R {sub ☉} from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R {sub ☉} is nearly isothermal, with a temperature of T = 1.43 ± 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 ± 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R ≳ 2 R {sub ☉}.

  7. Study of Extreme-ultraviolet Emission and Properties of a Coronal Streamer from PROBA2/SWAP, Hinode/EIS and Mauna Loa Mk4 Observations

    NASA Astrophysics Data System (ADS)

    Goryaev, F.; Slemzin, V.; Vainshtein, L.; Williams, David R.

    2014-02-01

    Wide-field extreme-ultraviolet (EUV) telescopes imaging in spectral bands sensitive to 1 MK plasma on the Sun often observe extended, ray-like coronal structures stretching radially from active regions to distances of 1.5-2 R ⊙, which represent the EUV counterparts of white-light streamers. To explain this phenomenon, we investigated the properties of a streamer observed on 2010 October 20 and 21, by the PROBA2/SWAP EUV telescope together with the Hinode/EIS (HOP 165) and the Mauna Loa Mk4 white-light coronagraph. In the SWAP 174 Å band comprising the Fe IX-Fe XI lines, the streamer was detected to a distance of 2 R ⊙. We assume that the EUV emission is dominated by collisional excitation and resonant scattering of monochromatic radiation coming from the underlying corona. Below 1.2 R ⊙, the plasma density and temperature were derived from the Hinode/EIS data by a line-ratio method. Plasma conditions in the streamer and in the background corona above 1.2 R ⊙ from the disk center were determined by forward-modeling the emission that best fit the observational data in both EUV and white light. It was found that the plasma in the streamer above 1.2 R ⊙ is nearly isothermal, with a temperature of T = 1.43 ± 0.08 MK. The hydrostatic scale-height temperature determined from the evaluated density distribution was significantly higher (1.72 ± 0.08 MK), which suggests the existence of outward plasma flow along the streamer. We conclude that, inside the streamer, collisional excitation provided more than 90% of the observed EUV emission, whereas, in the background corona, the contribution of resonance scattering became comparable with that of collisions at R >~ 2 R ⊙.

  8. Simultaneous Extreme-Ultraviolet Explorer and Optical Observations of Ad Leonis: Evidence for Large Coronal Loops and the Neupert Effect in Stellar Flares

    NASA Technical Reports Server (NTRS)

    Hawley, Suzanne L.; Fisher, George H.; Simon, Theodore; Cully, Scott L.; Deustua, Susana E.; Jablonski, Marek; Johns-Krull, Christopher; Pettersen, Bjorn R.; Smith, Verne; Spiesman, William J.; Valenti, Jeffrey

    1995-01-01

    We report on the first simultaneous Extreme-Ultraviolet Explorer (EUVE) and optical observations of flares on the dMe flare star AD Leonis. The data show the following features: (1) Two flares (one large and one of moderate size) of several hours duration were observed in the EUV wavelength range; (2) Flare emission observed in the optical precedes the emission seen with EUVE; and (3) Several diminutions (DIMs) in the optical continuum were observed during the period of optical flare activity. To interpret these data, we develop a technique for deriving the coronal loop length from the observed rise and decay behavior of the EUV flare. The technique is generally applicable to existing and future coronal observations of stellar flares. We also determine the pressure, column depth, emission measure, loop cross-sectional area, and peak thermal energy during the two EUV flares, and the temperature, area coverage, and energy of the optical continuum emission. When the optical and coronal data are combined, we find convincing evidence of a stellar 'Neupert effect' which is a strong signature of chromospheric evaporation models. We then argue that the known spatial correlation of white-light emission with hard X-ray emission in solar flares, and the identification of the hard X-ray emission with nonthermal bremsstrahlung produced by accelerated electrons, provides evidence that flare heating on dMe stars is produced by the same electron precipitation mechanism that is inferred to occur on the Sun. We provide a thorough picture of the physical processes that are operative during the largest EUV flare, compare and contrast this picture with the canonical solar flare model, and conclude that the coronal loop length may be the most important factor in determining the flare rise time and energetics.

  9. Spectrophotometry of extreme helium stars - Ultraviolet fluxes and effective temperatures

    NASA Technical Reports Server (NTRS)

    Heber, U.; Drilling, J. S.; Schoenberner, D.; Lynas-Gray, A. E.

    1984-01-01

    Ultraviolet flux distributions are presented for the extremely helium rich stars BD +10 deg 2179, HD 124448, LSS 3378, BD -9 deg 4395, LSE 78, HD 160641, LSIV -1 deg 2, BD 1 deg 3438, HD 168476, MV Sgr, LS IV-14 deg 109 (CD -35 deg 11760), LSII +33 deg 5 and BD +1 deg 4381 (LSIV +2 deg 13) obtained with the International Ultraviolet Explorer (IUE). Broadband photometry and a newly computed grid of line blanketed model atmospheres were used to determine accurate angular diameters and total stellar fluxes. The resultant effective temperatures are in most cases in satisfactory agreement with those based on broadband photometry and/or high resolution spectroscopy in the visible. For two objects, LSII +33 deg 5 and LSE 78, disagreement was found between the IUE observations and broadband photometry: the colors predict temperatures around 20,000 K, whereas the UV spectra indicate much lower photospheric temperatures of 14,000 to 15,000 K. The new temperature scale for extreme helium stars extends to lower effective temperatures than that of Heber and Schoenberner (1981) and covers the range from 8,500 K to 32,000 K. Previously announced in STAR as N83-24433

  10. High intensity vacuum ultraviolet and extreme ultraviolet production by noncollinear mixing in laser vaporized media

    NASA Astrophysics Data System (ADS)

    Todt, Michael A.; Albert, Daniel R.; Davis, H. Floyd

    2016-06-01

    A method is described for generating intense pulsed vacuum ultraviolet (VUV) and extreme ultraviolet (XUV) laser radiation by resonance enhanced four-wave mixing of commercial pulsed nanosecond lasers in laser vaporized mercury under windowless conditions. By employing noncollinear mixing of the input beams, the need of dispersive elements such as gratings for separating the VUV/XUV from the residual UV and visible beams is eliminated. A number of schemes are described, facilitating access to the 9.9-14.6 eV range. A simple and convenient scheme for generating wavelengths of 125 nm, 112 nm, and 104 nm (10 eV, 11 eV, and 12 eV) using two dye lasers without the need for dye changes is described.

  11. A POSSIBLE DETECTION OF A FAST-MODE EXTREME ULTRAVIOLET WAVE ASSOCIATED WITH A MINI CORONAL MASS EJECTION OBSERVED BY THE SOLAR DYNAMICS OBSERVATORY

    SciTech Connect

    Zheng Ruisheng; Jiang Yunchun; Hong Junchao; Yang Jiayan; Bi Yi; Yang Liheng; Yang Dan

    2011-10-01

    'Extreme ultraviolet (EUV) waves' are large-scale wavelike transients often associated with coronal mass ejections (CMEs). In this Letter, we present a possible detection of a fast-mode EUV wave associated with a mini-CME observed by the Solar Dynamics Observatory. On 2010 December 1, a small-scale EUV wave erupted near the disk center associated with a mini-CME, which showed all the low corona manifestations of a typical CME. The CME was triggered by the eruption of a mini-filament, with a typical length of about 30''. Although the eruption was tiny, the wave had the appearance of an almost semicircular front and propagated at a uniform velocity of 220-250 km s{sup -1} with very little angular dependence. The CME lateral expansion was asymmetric with an inclination toward north, and the southern footprints of the CME loops hardly shifted. The lateral expansion resulted in deep long-duration dimmings, showing the CME extent. Comparing the onset and the initial speed of the CME, the wave was likely triggered by the rapid expansion of the CME loops. Our analysis confirms that the small-scale EUV wave is a true wave, interpreted as a fast-mode wave.

  12. Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies

    SciTech Connect

    Wilson, Daniel; Rudolf, Denis Juschkin, Larissa; Weier, Christian; Adam, Roman; Schneider, Claus M.; Winkler, Gerrit; Frömter, Robert; Danylyuk, Serhiy; Bergmann, Klaus; Grützmacher, Detlev

    2014-10-15

    Generation of circularly polarized light in the extreme ultraviolet (EUV) spectral region (about 25 eV–250 eV) is highly desirable for applications in spectroscopy and microscopy but very challenging to achieve in a small-scale laboratory. We present a compact apparatus for generation of linearly and circularly polarized EUV radiation from a gas-discharge plasma light source between 50 eV and 70 eV photon energy. In this spectral range, the 3p absorption edges of Fe (54 eV), Co (60 eV), and Ni (67 eV) offer a high magnetic contrast often employed for magneto-optical and electron spectroscopy as well as for magnetic imaging. We simulated and designed an instrument for generation of linearly and circularly polarized EUV radiation and performed polarimetric measurements of the degree of linear and circular polarization. Furthermore, we demonstrate first measurements of the X-ray magnetic circular dichroism at the Co 3p absorption edge with a plasma-based EUV light source. Our approach opens the door for laboratory-based, element-selective spectroscopy of magnetic materials and spectro-microscopy of ferromagnetic domains.

  13. Extreme ultraviolet solar irradiance during the rising phase of solar cycle 24 observed by PROBA2/LYRA

    NASA Astrophysics Data System (ADS)

    Kretzschmar, Matthieu; Dammasch, Ingolf E.; Dominique, Marie; Zender, Joe; Cessateur, Gaël; D'Huys, Elke

    2012-08-01

    The Large-Yield Radiometer (LYRA) is a radiometer that has monitored the solar irradiance at high cadence and in four pass bands since January 2010. Both the instrument and its spacecraft, PROBA2 (Project for OnBoard Autonomy), have several innovative features for space instrumentation, which makes the data reduction necessary to retrieve the long-term variations of solar irradiance more complex than for a fully optimized solar physics mission. In this paper, we describe how we compute the long-term time series of the two extreme ultraviolet irradiance channels of LYRA and compare the results with those of SDO/EVE. We find that the solar EUV irradiance has increased by a factor of 2 since the last solar minimum (between solar cycles 23 and 24), which agrees reasonably well with the EVE observations.

  14. Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front metrology tool with subangstrom reference-wave accuracy.

    PubMed

    Naulleau, P P; Goldberg, K A; Lee, S H; Chang, C; Attwood, D; Bokor, J

    1999-12-11

    The phase-shifting point-diffraction interferometer (PS/PDI) was recently developed and implemented at Lawrence Berkeley National Laboratory to characterize extreme-ultraviolet (EUV) projection optical systems for lithography. Here we quantitatively characterize the accuracy and precision of the PS/PDI. Experimental measurements are compared with theoretical results. Two major classes of errors affect the accuracy of the interferometer: systematic effects arising from measurement geometry and systematic and random errors due to an imperfect reference wave. To characterize these effects, and hence to calibrate the interferometer, a null test is used. This null test also serves as a measure of the accuracy of the interferometer. We show the EUV PS/PDI, as currently implemented, to have a systematic error-limited reference-wave accuracy of 0.0028 waves (lambda/357 or 0.038 nm at lambda = 13.5 nm) within a numerical aperture of 0.082. PMID:18324274

  15. Lensless hyperspectral spectromicroscopy with a tabletop extreme-ultraviolet source

    NASA Astrophysics Data System (ADS)

    Gardner, Dennis F.; Zhang, Bosheng; Seaberg, Matthew H.; Shanblatt, Elisabeth R.; Porter, Christina L.; Karl, Robert; Mancuso, Christopher; Kapteyn, Henry C.; Murnane, Margaret M.; Adams, Daniel E.

    2016-03-01

    We demonstrate hyperspectral coherent imaging in the EUV spectral region for the first time, without the need for hardware-based wavelength separation. This new scheme of spectromicroscopy is the most efficient use of EUV photons for imaging because there is no energy loss from mirrors or monochromatizing optics. An EUV spectral comb from a tabletop high-harmonic source, centered at a wavelength of 30nm, illuminates the sample and the scattered light is collected on a pixel-array detector. Using a lensless imaging technique known as ptychographical information multiplexing, we simultaneously retrieve images of the spectral response of the sample at each individual harmonic. We show that the retrieved spectral amplitude and phase agrees with theoretical predictions. This work demonstrates the power of coherent EUV beams for rapid material identification with nanometer-scale resolution.

  16. Status of EUV reticle handling solution in meeting 32 nm HP EUV lithography

    NASA Astrophysics Data System (ADS)

    He, Long; Wurm, Stefan; Seidel, Phil; Orvek, Kevin; Betancourt, Ernie; Underwood, Jon

    2008-03-01

    Significant progress has been made over the past several years in developing extreme ultraviolet (EUV) mask infrastructure, especially in EUV reticle handling and protection. Today, the industry has converged to standardize the dual pod reticle carrier approach in developing EUV reticle handling solutions. SEMATECH has already established reticle handling infrastructure compliant with industry's draft standard, including carrier, robotic carrier handling, automated carrier cleaning, vacuum protection, and state-of-the-art particulate contamination testing capabilities. It proves to be one of the key enablers in developing EUV reticle protection solutions, through broad collaboration with industry stakeholders and suppliers. In this paper, we discuss our in-house reticle handling infrastructure and provide insights on how to apply it in EUV lithography pilot line development and future production line. We present particulate contamination free baseline results of state-of-the-art EUV reticle carriers, i.e., sPod, throughout lifecycle uses. We will also compare the results against requirements for 32 nm half-pitch (HP) EUV lithography, to identify the remaining challenges ahead of the industry.

  17. QUADRATURE OBSERVATIONS OF WAVE AND NON-WAVE COMPONENTS AND THEIR DECOUPLING IN AN EXTREME-ULTRAVIOLET WAVE EVENT

    SciTech Connect

    Dai, Y.; Ding, M. D.; Chen, P. F.; Zhang, J.

    2012-11-01

    We report quadrature observations of an extreme-ultraviolet (EUV) wave event on 2011 January 27 obtained by the Extreme Ultraviolet Imager on board the Solar Terrestrial Relations Observatory, and the Atmospheric Imaging Assembly on board the Solar Dynamics Observatory. Two components are revealed in the EUV wave event. A primary front is launched with an initial speed of {approx}440 km s{sup -1}. It appears that significant emission enhancement occurs in the hotter channel while deep emission reduction occurs in the cooler channel. When the primary front encounters a large coronal loop system and slows down, a secondary, much fainter, front emanates from the primary front with a relatively higher starting speed of {approx}550 km s{sup -1}. Afterward, the two fronts propagate independently with increasing separation. The primary front finally stops at a magnetic separatrix, while the secondary front travels farther until it fades out. In addition, upon the arrival of the secondary front, transverse oscillations of a prominence are triggered. We suggest that the two components are of different natures. The primary front belongs to a non-wave coronal mass ejection (CME) component, which can be reasonably explained with the field-line stretching model. The multi-temperature behavior may be caused by considerable heating due to nonlinear adiabatic compression on the CME frontal loop. As for the secondary front, it is most likely a linear fast-mode magnetohydrodynamic wave that propagates through a medium of the typical coronal temperature. X-ray and radio data provide us with complementary evidence in support of the above scenario.

  18. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak.

    PubMed

    Zhang, Ling; Morita, Shigeru; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Ohishi, Tetsutarou; Goto, Motoshi; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Dong, Chunfeng; Zhang, Hongmin; Huang, Xianli; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang

    2015-12-01

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm(2) and pixel numbers of 1024 × 255 (26 × 26 μm(2)/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ0 = 3-4 pixels, where Δλ0 is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification. PMID:26724029

  19. Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

    SciTech Connect

    Cardinale, G. F.; Henderson, C. C.; Goldsmith, J. E. M.; Mangat, P. J. S.; Cobb, J.; Hector, S. D.

    1999-11-01

    In two separate experiments, we have successfully demonstrated the transfer of dense- and loose-pitch line/space (L/S) photoresist features, patterned with extreme ultraviolet (EUV) lithography, into an underlying hard mask material. In both experiments, a deep-UV photoresist ({approx}90 nm thick) was spin cast in bilayer format onto a hard mask (50-90 nm thick) and was subsequently exposed to EUV radiation using a 10x reduction EUV exposure system. The EUV reticle was fabricated at Motorola (Tempe, AZ) using a subtractive process with Ta-based absorbers on Mo/Si multilayer mask blanks. In the first set of experiments, following the EUV exposures, the L/S patterns were transferred first into a SiO{sub 2} hard mask (60 nm thick) using a reactive ion etch (RIE), and then into polysilicon (350 nm thick) using a triode-coupled plasma RIE etcher at the University of California, Berkeley, microfabrication facilities. The latter etch process, which produced steep (>85 degree sign ) sidewalls, employed a HBr/Cl chemistry with a large (>10:1) etch selectivity of polysilicon to silicon dioxide. In the second set of experiments, hard mask films of SiON (50 nm thick) and SiO{sub 2} (87 nm thick) were used. A RIE was performed at Motorola using a halogen gas chemistry that resulted in a hard mask-to-photoresist etch selectivity >3:1 and sidewall profile angles {>=}85 degree sign . Line edge roughness (LER) and linewidth critical dimension (CD) measurements were performed using Sandia's GORA(c) CD digital image analysis software. Low LER values (6-9 nm, 3{sigma}, one side) and good CD linearity (better than 10%) were demonstrated for the final pattern-transferred dense polysilicon L/S features from 80 to 175 nm. In addition, pattern transfer (into polysilicon) of loose-pitch (1:2) L/S features with CDs{>=}60 nm was demonstrated. (c) 1999 American Vacuum Society.

  20. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak

    SciTech Connect

    Zhang, Ling; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang; Morita, Shigeru; Ohishi, Tetsutarou; Goto, Motoshi; Dong, Chunfeng; and others

    2015-12-15

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm{sup 2} and pixel numbers of 1024 × 255 (26 × 26 μm{sup 2}/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ{sub 0} = 3-4 pixels, where Δλ{sub 0} is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  1. A fast-time-response extreme ultraviolet spectrometer for measurement of impurity line emissions in the Experimental Advanced Superconducting Tokamak

    NASA Astrophysics Data System (ADS)

    Zhang, Ling; Morita, Shigeru; Xu, Zong; Wu, Zhenwei; Zhang, Pengfei; Wu, Chengrui; Gao, Wei; Ohishi, Tetsutarou; Goto, Motoshi; Shen, Junsong; Chen, Yingjie; Liu, Xiang; Wang, Yumin; Dong, Chunfeng; Zhang, Hongmin; Huang, Xianli; Gong, Xianzu; Hu, Liqun; Chen, Junlin; Zhang, Xiaodong; Wan, Baonian; Li, Jiangang

    2015-12-01

    A flat-field extreme ultraviolet (EUV) spectrometer working in the 20-500 Å wavelength range with fast time response has been newly developed to measure line emissions from highly ionized tungsten in the Experimental Advanced Superconducting Tokamak (EAST) with a tungsten divertor, while the monitoring of light and medium impurities is also an aim in the present development. A flat-field focal plane for spectral image detection is made by a laminar-type varied-line-spacing concave holographic grating with an angle of incidence of 87°. A back-illuminated charge-coupled device (CCD) with a total size of 26.6 × 6.6 mm2 and pixel numbers of 1024 × 255 (26 × 26 μm2/pixel) is used for recording the focal image of spectral lines. An excellent spectral resolution of Δλ0 = 3-4 pixels, where Δλ0 is defined as full width at the foot position of a spectral line, is obtained at the 80-400 Å wavelength range after careful adjustment of the grating and CCD positions. The high signal readout rate of the CCD can improve the temporal resolution of time-resolved spectra when the CCD is operated in the full vertical binning mode. It is usually operated at 5 ms per frame. If the vertical size of the CCD is reduced with a narrow slit, the time response becomes faster. The high-time response in the spectral measurement therefore makes possible a variety of spectroscopic studies, e.g., impurity behavior in long pulse discharges with edge-localized mode bursts. An absolute intensity calibration of the EUV spectrometer is also carried out with a technique using the EUV bremsstrahlung continuum at 20-150 Å for quantitative data analysis. Thus, the high-time resolution tungsten spectra have been successfully observed with good spectral resolution using the present EUV spectrometer system. Typical tungsten spectra in the EUV wavelength range observed from EAST discharges are presented with absolute intensity and spectral identification.

  2. Nanoplasmonic generation of ultrashort EUV pulses

    NASA Astrophysics Data System (ADS)

    Choi, Joonhee; Lee, Dong-Hyub; Han, Seunghwoi; Park, In-Yong; Kim, Seungchul; Kim, Seung-Woo

    2012-10-01

    Ultrashort extreme-ultraviolet (EUV) light pulses are an important tool for time-resolved pump-probe spectroscopy to investigate the ultrafast dynamics of electrons in atoms and molecules. Among several methods available to generate ultrashort EUV light pulses, the nonlinear frequency upconversion process of high-harmonic generation (HHG) draws attention as it is capable of producing coherent EUV pulses with precise control of burst timing with respect to the driving near-infrared (NIR) femtosecond laser. In this report, we present and discuss our recent experimental data obtained by the plasmon-driven HHG method that generate EUV radiation by means of plasmonic nano-focusing of NIR femtosecond pulses. For experiment, metallic waveguides having a tapered hole of funnel shape inside were fabricated by adopting the focused-ion-beam process on a micro-cantilever substrate. The plasmonic field formed within the funnelwaveguides being coupled with the incident femtosecond pulse permitted intensity enhancement by a factor of ~350, which creates a hot spot of sub-wavelength size with intensities strong enough for HHG. Experimental results showed that with injection of noble gases into the funnel-waveguides, EUV radiation is generated up to wavelengths of 32 nm and 29.6 nm from Ar and Ne gas atoms, respectively. Further, it was observed that lower-order EUV harmonics are cut off in the HHG spectra by the tiny exit aperture of the funnel-waveguide.

  3. Soft X-ray irradiance measured by the Solar Aspect Monitor on the Solar Dynamic Observatory Extreme ultraviolet Variability Experiment

    NASA Astrophysics Data System (ADS)

    Lin, C. Y.; Bailey, S. M.; Jones, A.; Woodraska, D.; Caspi, A.; Woods, T. N.; Eparvier, F. G.; Wieman, S. R.; Didkovsky, L. V.

    2016-04-01

    The Solar Aspect Monitor (SAM) is a pinhole camera on the Extreme ultraviolet Variability Experiment (EVE) aboard the Solar Dynamics Observatory. SAM projects the solar disk onto the CCD through a metallic filter designed to allow only solar photons shortward of 7 nm to pass. Contamination from energetic particles and out-of-band irradiance is, however, significant in the SAM observations. We present a technique for isolating the 0.01-7 nm integrated irradiance from the SAM signal to produce the first results of broadband irradiance for the time period from May 2010 to May 2014. The results of this analysis agree with a similar data product from EVE's EUV SpectroPhotometer to within 25%. We compare our results with measurements from the Student Nitric Oxide Explorer Solar X-ray Photometer and the Thermosphere Ionosphere Mesosphere Energetics and Dynamics Solar EUV Experiment at similar levels of solar activity. We show that the full-disk SAM broadband results compared well to the other measurements of the 0.01-7 nm irradiance. We also explore SAM's capability toward resolving spatial contribution from regions of solar disk in irradiance and demonstrate this feature with a case study of several strong flares that erupted from active regions on 11 March 2011.

  4. Application of natural linear polysaccharide to green resist polymers for electron beam and extreme-ultraviolet lithography

    NASA Astrophysics Data System (ADS)

    Takei, Satoshi; Oshima, Akihiro; Oyama, Tomoko G.; Ito, Kenta; Sugahara, Kigen; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi; Hanabata, Makoto

    2014-11-01

    The application of natural linear polysaccharide to green resist polymers was demonstrated for electron beam (EB) and extreme-ultraviolet (EUV) lithography using organic-solvent-free water spin-coating and tetramethylammonium hydroxide (TMAH)-free water-developable techniques. The water spin-coating and water-developable processes in a green resist material were carried out on wafers because of the water solubility of natural polysaccharides for an environmentally friendly manufacturing process for next-generation electronic devices. The developed green resist material with a weight-average molecular weight of 83,000 and 70 mol % hydroxyl groups as a water-developable feature was found to have acceptable properties such as spin-coat ability on 200 mm wafers, prediction sensitivity to EUV at the wavelengths of 6.7 and 13.5 nm, a high contrast of the water dissolution rate before and after EB irradiation, pillar patterns of 100-400 nm with a high EB sensitivity of 10 µC/cm2, and etch selectivity with a silicon-based middle layer in CF4 plasma treatment.

  5. STEREOSCOPIC DETERMINATION OF HEIGHTS OF EXTREME ULTRAVIOLET BRIGHT POINTS USING DATA TAKEN BY SECCHI/EUVI ABOARD STEREO

    SciTech Connect

    Kwon, Ryun-Young; Chae, Jongchul; Zhang Jie

    2010-05-01

    We measure the heights of EUV bright points (BPs) above the solar surface by applying a stereoscopic method to the data taken by the Solar TErrestrial RElations Observatory/SECCHI/Extreme UltraViolet Imager (EUVI). We have developed a three-dimensional reconstruction method for point-like features such as BPs using the simple principle that the position of a point in the three-dimensional space is specified as the intersection of two lines of sight. From a set of data consisting of EUVI 171 A, 195 A, 284 A, and 304 A images taken on 11 days arbitrarily selected during a period of 14 months, we have identified and analyzed 210 individual BPs that were visible on all four passband images and smaller than 30 Mm. The BPs seen in the 304 A images have an average height of 4.4 Mm, and are often associated with the legs of coronal loops. In the 171 A, 195 A, and 284 A images the BPs appear loop-shaped, and have average heights of 5.1, 6.7, and 6.1 Mm, respectively. Moreover, there is a tendency that overlying loops are filled with hotter plasmas. The average heights of BPs in 171 A, 195 A, and 284 A passbands are roughly twice the corresponding average lengths. Our results support the notion that an EUV BP represents a system of small loops with temperature stratification like flaring loops, being consistent with the magnetic reconnection origin.

  6. Investigation of the interaction of a laser pulse with a preformed Gaussian Sn plume for an extreme ultraviolet lithography source

    SciTech Connect

    Tao, Y.; Tillack, M. S.; Harilal, S. S.; Sequoia, K. L.; Najmabadi, F.

    2007-01-15

    The interaction of a laser pulse with a Sn preplasma formed by a low energy prepulse was investigated for an extreme ultraviolet (EUV) lithography light source. A much lower ion kinetic energy and nearly the same conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV light were simultaneously observed as compared with those from the direct interaction with a solid surface. The reason comes from the interaction of the laser pulse with a smooth preplume induced by the prepulse. The density profile of the preplume was measured with time-resolved shadowgraphy and could be fitted with a Gaussian function. The energy of the ions located at the flux peak E{sub p} scales with the length of the preplume l{sub s} as E{sub p}{proportional_to}1/l{sub s}. Laser absorption in the low-density preplume and ion acceleration during plasma expansion are discussed. This result provides a general way to control particle energy from a laser plasma interaction.

  7. Quantitative analysis of electron energy loss spectra and modelling of optical properties of multilayer systems for extreme ultraviolet radiation regime

    SciTech Connect

    Gusenleitner, S.; Hauschild, D.; Reinert, F.; Handick, E.

    2014-03-28

    Ruthenium capped multilayer coatings for use in the extreme ultraviolet (EUV) radiation regime have manifold applications in science and industry. Although the Ru cap shall protect the reflecting multilayers, the surface of the heterostructures suffers from contamination issues and surface degradation. In order to get a better understanding of the effects of these impurities on the optical parameters, reflection electron energy loss spectroscopy (REELS) measurements of contaminated and H cleaned Ru multilayer coatings were taken at various primary electron beam energies. Experiments conducted at low primary beam energies between 100 eV and 1000 eV are very surface sensitive due to the short inelastic mean free path of the electrons in this energy range. Therefore, influences of the surface condition on the above mentioned characteristics can be appraised. In this paper, it can be shown that carbon and oxide impurities on the mirror surface decrease the transmission of the Ru cap by about 0.75% and the overall reflectance of the device is impaired as the main share of the non-transmitted EUV light is absorbed in the contamination layer.

  8. Instrumentation for analysis and utilization of extreme-ultraviolet and soft x-ray high-order harmonics

    SciTech Connect

    Poletto, L.; Bonora, S.; Pascolini, M.; Villoresi, P.

    2004-11-01

    The design and the performances of an extreme ultraviolet (EUV)spectrometer/monochromator for generation and diagnostics of high-order harmonics of an ultrashort (<30 fs) pulsed laser focused onto a gas jet are presented. The harmonic generation is optimized using an adaptive mirror before the laser focusing stage. A toroidal mirror is used to focus the XUV radiation in an intermediate stage for pump/probe experiments. A grazing-incidence flat-field spectrometer for the 5-75 nm spectral region has been designed: it adopts a stigmatic toroidal mirror and a varied line-space flat grating mounted in converging light. The almost flat stigmatic spectrum is acquired by a 40-mm-diameter microchannel plate intensifier; the whole detector can be moved to scan various portions of the spectrum. Different detectors allow one to acquire both integrated and single shot spectra at 1 kHz repetition rate. The absolute calibration of the spectrometer is provided. The same optical scheme can be applied to the design of a constant deviation angle EUV monochromator by substituting the detector block with an exit slit.

  9. EUVE survey observations of the moon

    NASA Technical Reports Server (NTRS)

    Mcdonald, J. S.; Gladstone, G. R.

    1993-01-01

    Preliminary survey images of the moon obtained by the Extreme Ultraviolet Explorer and results of data analysis are presented. The preliminary results indicate that the brightness of the moon varies little from observation to observation. Early results also show that the lunar albedo closely matches the relative reflectivity of mineral found on the moon's surface. Further studies are conducted during the spectroscopy phase of the EUVE mission to confirm current results regarding the presence of X-ray fluorescence in the data.

  10. Secondary Electrons in EUV Lithography

    SciTech Connect

    Torok, Justin; Re, Ryan Del; Herbol, Henry; Das, Sanjana; Bocharova, Irina; Paolucci, Angela; Ocola, Leonidas E.; Ventrice Jr., Carl; Lifshin, Eric; Denbeaux, Greg; Brainard, Robert L.

    2013-01-01

    Secondary electrons play critical roles in several imaging technologies, including extreme ultraviolet (EUV) lithography. At longer wavelengths of light (e.g. 193 and 248 nm), the photons are directly involved in the photochemistry occurring during photolysis. EUV light (13.5 nm, 92 eV), however, first creates a photoelectron, and this electron, or its subsequent daughter electrons create most of the chemical changes that occur during exposure. Despite the importance of these electrons, the details surrounding the chemical events leading to acid production remain poorly understood. Previously reported experimental results using high PAG-loaded resists have demonstrated that up to five or six photoacids can be generated per incident photon. Until recently, only electron recombination events were thought to play a role in acid generation, requiring that at least as many secondary electrons are produced to yield a given number of acid molecules. However, the initial results we have obtained using a Monte Carlo-based modeling program, LESiS, demonstrate that only two to three secondary electrons are made per absorbed EUV photon. A more comprehensive understanding of EUV-induced acid generation is therefore needed for the development of higher performance resists

  11. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect

    Jiang, Y.; Rudenko, Artem; Herrwerth, O.; Foucar, L.; Kurka, M.; Kuhnel, K.; Lezius, M.; Kling, Matthias; van Tilborg, Jeroen; Belkacem, Ali; Ueda, K.; Dusterer, S.; Treusch, R.; Schroter, Claus-Dieter; Moshammer, Robbert; Ullrich, Joachim

    2011-06-17

    Ultrafast isomerization of acetylene cations ([HC = CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +} + CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52 {+-} 15 fs in a kinetic energy release (KER) window of 5.8 < KER < 8 eV, providing clear evidence for the existence of a fast, nonradiative decay channel.

  12. Method for the protection of extreme ultraviolet lithography optics

    DOEpatents

    Grunow, Philip A.; Clift, Wayne M.; Klebanoff, Leonard E.

    2010-06-22

    A coating for the protection of optical surfaces exposed to a high energy erosive plasma. A gas that can be decomposed by the high energy plasma, such as the xenon plasma used for extreme ultraviolet lithography (EUVL), is injected into the EUVL machine. The decomposition products coat the optical surfaces with a protective coating maintained at less than about 100 .ANG. thick by periodic injections of the gas. Gases that can be used include hydrocarbon gases, particularly methane, PH.sub.3 and H.sub.2S. The use of PH.sub.3 and H.sub.2S is particularly advantageous since films of the plasma-induced decomposition products S and P cannot grow to greater than 10 .ANG. thick in a vacuum atmosphere such as found in an EUVL machine.

  13. Ultrafast Extreme Ultraviolet Induced Isomerization of Acetylene Cations

    SciTech Connect

    Jiang, Y. H.; Kurka, M.; Kuehnel, K. U.; Schroeter, C. D.; Moshammer, R.; Rudenko, A.; Foucar, L.; Herrwerth, O.; Lezius, M.; Kling, M. F.; Tilborg, J. van; Belkacem, A.; Ueda, K.; Duesterer, S.; Treusch, R.; Ullrich, J.

    2010-12-31

    Ultrafast isomerization of acetylene cations ([HC=CH]{sup +}) in the low-lying excited A{sup 2}{Sigma}{sub g}{sup +} state, populated by the absorption of extreme ultraviolet (XUV) photons (38 eV), has been observed at the Free Electron Laser in Hamburg, (FLASH). Recording coincident fragments C{sup +}+CH{sub 2}{sup +} as a function of time between XUV-pump and -probe pulses, generated by a split-mirror device, we find an isomerization time of 52{+-}15 fs in a kinetic energy release (KER) window of 5.8

  14. Ne-like ion lasers in the extreme ultraviolet region

    SciTech Connect

    Li, Y.; Pretzler, G.; Fill, E.E.

    1995-11-01

    We report strong {ital J}=0--1, 3{ital p}-3{ital s} lasing in Ne-like scandium, calcium, potassium, and chlorine at wavelengths ranging from 35.3 nm in scandium to 52.9 nm in chlorine. The experiments were carried out with the ASTERIX IV iodine laser using a 15% prepulse 5.2 ns before the main pulse. These results extend the range of laser plasma x-ray lasers into the extreme ultraviolet region. Gain lengths between 7 and 11 were measured for the different lines. The 38.3-nm laser in calcium lased at an intensity as low as 5{times}10{sup 12} W/cm{sup {minus}2}.

  15. Upgrade of absolute extreme ultraviolet diagnostic on J-TEXT.

    PubMed

    Zhang, X L; Cheng, Z F; Hou, S Y; Zhuang, G; Luo, J

    2014-11-01

    The absolute extreme ultraviolet (AXUV) diagnostic system is used for radiation observation on J-TEXT tokamak [J. Zhang, G. Zhuang, Z. J. Wang, Y. H. Ding, X. Q. Zhang, and Y. J. Tang, Rev. Sci. Instrum. 81, 073509 (2010)]. The upgrade of the AXUV system is aimed to improve the spatial resolution and provide a three-dimensional image on J-TEXT. The new system consists of 12 AXUV arrays (4 AXUV16ELG arrays, 8 AXUV20ELG arrays). The spatial resolution in the cross-section is 21 mm for the AXUV16ELG arrays and 17 mm for the AXUV20ELG arrays. The pre-amplifier is also upgraded for a higher signal to noise ratio. By upgrading the AXUV imaging system, a more accurate observation on the radiation information is obtained. PMID:25430327

  16. Upgrade of absolute extreme ultraviolet diagnostic on J-TEXT

    SciTech Connect

    Zhang, X. L.; Cheng, Z. F. Hou, S. Y.; Zhuang, G.; Luo, J.

    2014-11-15

    The absolute extreme ultraviolet (AXUV) diagnostic system is used for radiation observation on J-TEXT tokamak [J. Zhang, G. Zhuang, Z. J. Wang, Y. H. Ding, X. Q. Zhang, and Y. J. Tang, Rev. Sci. Instrum. 81, 073509 (2010)]. The upgrade of the AXUV system is aimed to improve the spatial resolution and provide a three-dimensional image on J-TEXT. The new system consists of 12 AXUV arrays (4 AXUV16ELG arrays, 8 AXUV20ELG arrays). The spatial resolution in the cross-section is 21 mm for the AXUV16ELG arrays and 17 mm for the AXUV20ELG arrays. The pre-amplifier is also upgraded for a higher signal to noise ratio. By upgrading the AXUV imaging system, a more accurate observation on the radiation information is obtained.

  17. Extreme ultraviolet mask substrate surface roughness effects on lithography patterning

    SciTech Connect

    George, Simi; Naulleau, Patrick; Salmassi, Farhad; Mochi, Iacopo; Gullikson, Eric; Goldberg, Kenneth; Anderson, Erik

    2010-06-21

    In extreme ultraviolet lithography exposure systems, mask substrate roughness induced scatter contributes to LER at the image plane. In this paper, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programmed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. We find that the roughness measurements by top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. We suggest at wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects.

  18. Extreme ultraviolet spectrograph ATM experiment S082B

    NASA Technical Reports Server (NTRS)

    Bartoe, J.-D. F.; Brueckner, G. E.; Purcell, J. D.; Tousey, R.

    1977-01-01

    The extreme-ultraviolet double-dispersion photographic spectrograph for the Apollo Telescope Mount (ATM) experiment S082B on Skylab is described. Novel features were the use of a predisperser grating with a ruling whose spacing varied approximately linearly with distance for the purpose of increasing the instrument speed by reducing the astigmatism and a photoelectric servosystem to stabilize to 1 sec of arc the solar image at various near-limb positions. The 970-3940-A range was covered in two sections with effective resolving power of approximately 30,000 from 1100 A to 1970 A. The spatial resolution was 2 x 60 solar sec of arc. During the Skylab mission 6400 exposures were made with the instrument pointed by an astronaut at selected and recorded solar positions.

  19. Electron impact excitation of argon in the extreme vacuum ultraviolet

    NASA Technical Reports Server (NTRS)

    Mentall, J. E.; Morgan, H. D.

    1976-01-01

    Polarization-free excitation cross sections in the extreme vacuum ultraviolet have been measured for electron impact on Ar. Observed spectral features were those lines of Ar I and Ar II which lie between 700 and 1100 A. Excitation functions were measured for the Ar I resonance line at 1048 A and the Ar II resonance line at 920 A. Peak cross sections for these two lines were found to be (39.4 plus or minus 7.9) x 10 to the -18th and (6.9 plus or minus 1.4) x 10 to the -18th, respectively. At low energies, excitation of the Ar II resonance line is dominated by an electron exchange transition.

  20. Extreme ultraviolet spectra of highly ionized oxygen and fluorine

    NASA Technical Reports Server (NTRS)

    Pegg, D. J.; Griffin, P. M.; Haselton, H. H.; Laubert, R.; Mowat, J. R.; Thoe, R. S.; Peterson, R. S.; Sellin, I. A.

    1974-01-01

    The foil-excitation method has been used to study the extreme ultraviolet spectra of highly ionized oxygen and fluorine. Several previously unreported lines in heliumlike fluorine are reported and other newly reported lines in heliumlike oxygen have been measured to higher accuracy. Included in the measurements are certain heliumlike oxygen transitions of significance in interpretation of solar-flare spectral observations. The wavelength determinations are usually in good agreement with calculated results which includes relativistic corrections, but discrepancies arise when nonrelativistic calculations are used. A comparison of the present results and those recently obtained by theta-pinch and laser-induced plasma sources is made for both heliumlike and lithiumlike ions; a few discrepancies occur, with results in most cases in better agreement with relativistically corrected calculations. Certain unidentified lines in the spectra may be attributable to radiative transitions between quartet states of lithiumlike ions.

  1. A Penning discharge source for extreme ultraviolet calibration

    NASA Technical Reports Server (NTRS)

    Finley, David S.; Jelinsky, Patrick; Bowyer, Stuart; Malina, Roger F.

    1986-01-01

    A Penning discharge lamp for use in the calibration of instruments and components for the extreme ultraviolet has been developed. This source is sufficiently light and compact to make it suitable for mounting on the movable slit assembly of a grazing incidence Rowland circle monochromator. Because this is a continuous discharge source, it is suitable for use with photon counting detectors. Line radiation is provided both by the gas and by atoms sputtered off the interchangeable metal cathodes. Usable lines are produced by species as highly ionized as Ne IV and Al V. The wavelength coverage provided is such that a good density of emission lines is available down to wavelengths as short as 100A. This source fills the gap between 100 and 300A, which is inadequately covered by the other available compact continuous radiation sources.

  2. Deposition and characterization of B4C/CeO2 multilayers at 6.x nm extreme ultraviolet wavelengths

    NASA Astrophysics Data System (ADS)

    Sertsu, M. G.; Giglia, A.; Brose, S.; Park, D.; Wang, Z. S.; Mayer, J.; Juschkin, L.; Nicolosi, P.

    2016-03-01

    New multilayers of boron carbide/cerium dioxide (B4C/CeO2) combination on silicon (Si) substrate are manufactured to represent reflective-optics candidates for future lithography at 6.x nm wavelength. This is one of only a few attempts to make multilayers of this kind. Combination of several innovative experiments enables detailed study of optical properties, structural properties, and interface profiles of the multilayers in order to open up a room for further optimization of the manufacturing process. The interface profile is visualized by high-angle annular dark-field imaging which provides highly sensitive contrast to atomic number. Synchrotron based at-wavelength extreme ultraviolet (EUV) reflectance measurements near the boron (B) absorption edge allow derivation of optical parameters with high sensitivity to local atom interactions. X-ray reflectivity measurements at Cu-Kalpha (8 keV ) determine the period of multilayers with high in-depth resolution. By combining these measurements and choosing robust nonlinear curve fitting algorithms, accuracy of the results has been significantly improved. It also enables a comprehensive characterization of multilayers. Interface diffusion is determined to be a major cause for the low reflectivity performance. Optical constants of B4C and CeO2 layers are derived in EUV wavelengths. Besides, optical properties and asymmetric thicknesses of inter-diffusion layers (interlayers) in EUV wavelengths near the boron edge are determined. Finally, ideal reflectivity of the B4C/CeO2 combination is calculated by using optical constants derived from the proposed measurements in order to evaluate the potentiality of the design.

  3. Pd/B4C/Y multilayer coatings for extreme ultraviolet applications near 10  nm wavelength.

    PubMed

    Windt, David L; Gullikson, Eric M

    2015-06-20

    A new extreme ultraviolet (EUV) multilayer coating has been developed comprising Pd and Y layers with thin B4C barrier layers at each interface, for normal incidence applications near 10 nm wavelength. Periodic, nonperiodic, and dual-stack coatings have been investigated and compared with similar structures comprising either Mo/Y or Pd/B4C bilayers. We find that Pd/B4C/Y multilayers provide higher reflectance than either Mo/Y or Pd/B4C, with much lower film stress than Pd/B4C. We have also investigated the performance of periodic multilayers comprising repetitions of Pd/Y, Ru/Y, or Ru/B4C/Y, as well as Pd/B4C multilayers deposited using reactive sputtering with an Ar:N2 gas mixture in order to reduce stress: these material combinations were all found to provide poor EUV performance. The temporal stability of a periodic Pd/B4C/Y multilayer stored in air was investigated over a period of 16 months, and a slight reduction in peak reflectance was observed. Periodic Pd/B4C/Y multilayers were also found to be thermally stable up to 100°C; at higher temperatures (200°C and 300°C) we observe a slight reduction in peak reflectance and a slight increase in multilayer period. High-resolution transmission electron microscopy and selected area diffraction of an as-deposited Pd/B4C/Y film indicates a fully amorphous structure, with interfaces that are both smoother and more abrupt than those observed in a comparable Pd/B4C multilayer in which the Pd layers are polycrystalline. The new Pd/B4C/Y multilayers are suitable for normal-incidence imaging and spectroscopy applications, including solar physics, plasma physics, high-brightness EUV light sources, and others. PMID:26193039

  4. Soft x-ray microscopy and extreme ultraviolet lithography: Imaging in the 20-50 nm regime (abstract) (invited)

    NASA Astrophysics Data System (ADS)

    Attwood, David

    2002-03-01

    Advances in short wavelength optics, covering the range from 1 to 14 nm, are providing new results and new opportunities. Zone plate lenses [E. Anderson et al., J. Vac. Sci. Techno. B 18, 2970 (2000)] for soft x-ray microscopy [G. Denbeaux, Rev. Sci. Instrum. (these proceedings); W. Chao, Proc. SPIE 4146, 171 (2000)] are now made to high accuracy with outer zone widths of 25 nm, and demonstrated resolution of 23 nm with proper illumination and stability. These permit important advances in the study of protein specific transport and structure in the life sciences [C. Larabell (private communication); W. Meyer-Ilse et al., J. Microsc. 201, 395 (2001)] and the study of magnetic materials [P. Fischer et al., J. Synchrotron. Radiat. 8, 325 (2001)] with elemental sensitivity at the resolution of individual domains. Major corporations (members of the EUV Limited Liability Company are Intel, Motorola, AMD, Micron, Infineon, and IBM) are now preparing the path for the fabrication of future computer chips, in the years 2007 and beyond, using multilayer coated reflective optics, which achieve reflectivities of 70% in the 11-14 nm region [T. Barbee et al., Appl. Opt. 24, 883 (1985); C. Montcalm et al., Proc. SPIE 3676, 710 (1999)]. These coated optics are to be incorporated in extreme ultraviolet (EUV) print cameras, known as "steppers." Electronic patterns with features in the range of 50-70 nm have been printed. The first alpha tool stepper recently demonstrated all critical technologies [D. Tichenor et al., Proc. SPIE 4343, 19 (2001)] needed for EUV lithography. Preproduction beta tools are targeted for delivery by leading suppliers [ASML, the Netherlands, at the SPIE Microlithography Conference, Santa Clara, CA, March 2001] in 2004, with high volume production tools available in late 2006 for manufacturing in 2007. New results in these two areas will be discussed in the context of the synergy of science and technology.

  5. Four-wave mixing experiments with extreme ultraviolet transient gratings

    NASA Astrophysics Data System (ADS)

    Bencivenga, F.; Cucini, R.; Capotondi, F.; Battistoni, A.; Mincigrucci, R.; Giangrisostomi, E.; Gessini, A.; Manfredda, M.; Nikolov, I. P.; Pedersoli, E.; Principi, E.; Svetina, C.; Parisse, P.; Casolari, F.; Danailov, M. B.; Kiskinova, M.; Masciovecchio, C.

    2015-04-01

    Four-wave mixing (FWM) processes, based on third-order nonlinear light-matter interactions, can combine ultrafast time resolution with energy and wavevector selectivity, and enable the exploration of dynamics inaccessible by linear methods. The coherent and multi-wave nature of the FWM approach has been crucial in the development of advanced technologies, such as silicon photonics, subwavelength imaging and quantum communications. All these technologies operate at optical wavelengths, which limits the spatial resolution and does not allow the probing of excitations with energy in the electronvolt range. Extension to shorter wavelengths--that is, the extreme ultraviolet and soft-X-ray ranges--would allow the spatial resolution to be improved and the excitation energy range to be expanded, as well as enabling elemental selectivity to be achieved by exploiting core resonances. So far, FWM applications at such wavelengths have been prevented by the absence of coherent sources of sufficient brightness and of suitable experimental set-ups. Here we show how transient gratings, generated by the interference of coherent extreme-ultraviolet pulses delivered by the FERMI free-electron laser, can be used to stimulate FWM processes at suboptical wavelengths. Furthermore, we have demonstrated the possibility of observing the time evolution of the FWM signal, which shows the dynamics of coherent excitations as molecular vibrations. This result opens the way to FWM with nanometre spatial resolution and elemental selectivity, which, for example, would enable the investigation of charge-transfer dynamics. The theoretical possibility of realizing these applications has already stimulated ongoing developments of free-electron lasers: our results show that FWM at suboptical wavelengths is feasible, and we hope that they will enable advances in present and future photon sources.

  6. The extreme ultraviolet spectroscope for planetary science, EXCEED

    NASA Astrophysics Data System (ADS)

    Yoshioka, K.; Murakami, G.; Yamazaki, A.; Tsuchiya, F.; Kagitani, M.; Sakanoi, T.; Kimura, T.; Uemizu, K.; Uji, K.; Yoshikawa, I.

    2013-09-01

    The extreme ultraviolet spectroscope EXtrem ultraviolet spetrosCope for ExosphEric Dynamics (EXCEED) on board the SPRINT-A mission will be launched in the summer of 2013 by the new Japanese solid propulsion rocket Epsilon as its first attempt, and it will orbit around the Earth with an orbital altitude of around 1000 km. EXCEED is dedicated to and optimized for observing the terrestrial planets Mercury, Venus and Mars, as well as Jupiter for several years. The instrument consists of an off axis parabolic entrance mirror, switchable slits with multiple filters and shapes, a toroidal grating, and a photon counting detector, together with a field of view guiding camera. The design goal is to achieve a large effective area but with high spatial and spectral resolution. In this paper, the performance of each optical component will be described as determined from the results of test evaluation of flight models. In addition, the results of the optical calibration of the overall instrument are also shown. As a result, the spectral resolution of EXCEED is found to be 0.3-0.5 nm Full Width at Half Maximum (FWHM) over the entire spectral band (52-148 nm) and the spatial resolution achieve was 10". The evaluated effective area is around 3 cm2. Based on these specifications, the possibility of EXCEED detecting atmospheric ions or atoms around Mercury, Venus, and Mars will be discussed. In addition, we estimate the spectra that might be detected from the Io plasma torus around Jupiter for various hypothetical plasma parameters.

  7. Charge Exchange Produced Emission of Carbon in the Iron M-shell Dominated 150-200 Å Extreme Ultraviolet Region

    NASA Astrophysics Data System (ADS)

    Lepson, Jaan K.; Beiersdorfer, Peter; Bitter, Manfred; Roquemore, A. Lane; Kaita, Robert

    2015-08-01

    We report on emission spectra in the extreme ultraviolet region 150-200 Å recorded at the National Spherical Torus Experiment (NSTX). This region is typically dominated by M-shell iron emission that is used extensively for solar observations, e.g. Hinode and the Solar Dynamics Observatory, and stellar atmospheres, e.g., the Extreme Ultraviolet Explorer (EUVE). We find that significant emission occurs from several heretofore unmeasured lines, which can persist throughout the plasma duration. We attribute these lines to emission from K-shell carbon ions (C V and C VI). Spectral modeling of collisional excitation fails to account for these lines, but modeling of charge exchange provides a good match with the observation. Our spectral model shows that the lines are formed by charge exchange of bare and hydrogenlike carbon with neutral hydrogen. The high abundance of bare and hydrogenlike carbon in the solar wind suggests that these lines may be formed in the heliosphere and may be part of the soft X-ray background. They may thus be observed by energy dispersive instruments, such as microcalorimeters.This work was supported by the DOE General Plasma Science program. Work was performed by Lawrence Livermore National Laboratory and Princeton Plasma Physics Laboratory under the auspices of the U. S. Department of Energy under Contracts DEAC52-07NA27344 and DE-AC02-09CH11466.

  8. Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Terao, Kenji

    2015-07-01

    High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.

  9. Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC

    NASA Astrophysics Data System (ADS)

    Racette, Kenneth C.; Williams, Carey T.; Fisch, Emily; Kindt, Louis; Lawliss, Mark; Ackel, Robin; Lercel, Michael J.

    2002-07-01

    Fabricating masks for extreme ultraviolet lithography is challenging. The high absorption of most materials at 13.4 nm and the small critical dimension (45 nm) at the target insertion node force many new features, including reflective mask design, new film choices, and stringent defect specifications. Fabrication of these masks requires the formation and patterning of both a repair buffer layer and an EUV absorber layer on top of a molybdenum/silicon multi-layer substrate. IBM and Photronics have been engaged in developing mask processing technology for x-ray, electron beam projection and extreme ultraviolet lithographies at the Next Generation Lithography Mask Center of Competency (NGL-MCoC) within IBM's mask facility at Essex Junction, Vermont. This paper describes recent results of mask fabrication on 6 x 6 x 1/4 inch EUVL substrates (quartz with molybdenum silicon multi-layers) at the MCoC. Masks fabricated with high and low-stress chromium and externally deposited chromium absorber films are compared. In particular, etch characteristics, image size, image placement, line edge roughness, and defect levels are presented and compared. Understanding the influence of the absorber film characteristics on these parameters will enable us to optimize the effectiveness of a given absorber film or to select acceptable alternatives.

  10. An extreme ultraviolet telescope with no soft X-ray response

    NASA Technical Reports Server (NTRS)

    Finley, David S.; Jelinsky, Patrick; Bowyer, Stuart; Malina, Roger F.

    1986-01-01

    While EUV grazing incidence telescopes of conventional design exhibit a substantial X-ray response as well as an extreme UV response, and existing bandpass filters for the transmission of radiation longward of 400 A also transmit soft X-rays, the grazing incidence telescope presented suppresses this soft X-ray throughput through the incorporation of a Wolter Schwarzschild Type II mirror with large graze angles. The desirable features of an EUV photometric survey telescope are retained. An instrument of this design will be flown on the EUE mission, in order to make a survey of the sky at wavelengths longer than 400 A.

  11. Extending resolution limits of EUV resist materials

    NASA Astrophysics Data System (ADS)

    Krysak, Marie; Leeson, Michael; Han, Eungnak; Blackwell, James; Harlson, Shane

    2015-03-01

    Extreme ultraviolet lithography (EUVL) technology continues to progress and remains a viable candidate for next generation lithography1, which drives the need for EUV resists capable of high resolution with high sensitivity and low LWR. While chemically amplified resists (CARs) have demonstrated the ability to pattern 12nm half-pitch features2, pattern collapse continues to limit their ultimate resolution. We have taken multiple approaches to extend resist capabilities past these limits. Recent results in pattern collapse mitigation using a resist encapsulation and etch back strategy will be discussed. We continue to investigate EUV patterning of semi-inorganic resists to simultaneously increase EUV photon absorption and extend mechanical strength beyond CAR capabilities. The limitations of metal oxide-based nanoparticle photoresists have been investigated, and have provided key insights to further understanding the mechanism of this class of materials.

  12. EUV resist processing with flash-lamp

    NASA Astrophysics Data System (ADS)

    Santillan, Julius Joseph; Kaneyama, Koji; Morita, Akihiko; Fuse, Kazuhiko; Kiyama, Hiroki; Asai, Masaya; Itani, Toshiro

    2012-03-01

    The reduction of line width roughness (LWR) remains a difficult issue for very fine patterns obtained with extreme ultraviolet (EUV) lithography. Thus, the investigation of LWR-reduction from the viewpoint of resist processing has become necessary. Alternative bake processes, such as the flash-lamp (FL) has been proven feasible as for application in EUV resists. This work focuses on initial investigations for its use in post-development bake (post bake or PB). A polyhydroxystyrene-acryl hybrid EUV model resist was utilized and comparisons with 'no bake' and conventional hot-plate PB conditions were made. As a result, relatively improved LWR was obtained with FL PB with minimal effect on lithographic performance. Moreover, in the course of these experiments, two types of resist reflow mechanisms assumed to be the primary basis for the LWR improvement achieved, are discussed.

  13. Sensitivity calibration of an imaging extreme ultraviolet spectrometer-detector system for determining the efficiency of broadband extreme ultraviolet sources

    SciTech Connect

    Fuchs, S.; Roedel, C.; Bierbach, J.; Paz, A. E.; Foerster, E.; Paulus, G. G.; Krebs, M.; Haedrich, S.; Limpert, J.; Kuschel, S.; Wuensche, M.; Hilbert, V.; Zastrau, U.

    2013-02-15

    We report on the absolute sensitivity calibration of an extreme ultraviolet (XUV) spectrometer system that is frequently employed to study emission from short-pulse laser experiments. The XUV spectrometer, consisting of a toroidal mirror and a transmission grating, was characterized at a synchrotron source in respect of the ratio of the detected to the incident photon flux at photon energies ranging from 15.5 eV to 99 eV. The absolute calibration allows the determination of the XUV photon number emitted by laser-based XUV sources, e.g., high-harmonic generation from plasma surfaces or in gaseous media. We have demonstrated high-harmonic generation in gases and plasma surfaces providing 2.3 {mu}W and {mu}J per harmonic using the respective generation mechanisms.

  14. Development of a laboratory extreme-ultraviolet lithography tool

    SciTech Connect

    Tichenor, D.A.; Kubiak, G.D.; Malinowski, M.E.; Stulen, R.H.; Haney, S.J.; Berger, K.W.; Nissen, R.P.; Wilkerson, G.A.; Paul, P.H.; Birtola, S.R.; Jin, P.S.; Arling, R.W.; Ray-Chaudhuri, A.K.; Sweatt, W.C.; Chow, W.W.; Bjorkholm, J.E.; Freeman, R.R.; Himel, M.D.; MacDowell, A.A.; Tennant, D.M.; Fetter, L.A.; Wood, O.R. II; Waskiewicz, W.K.; White, D.L.; Windt, D.L.; Jewell, T.E.

    1994-04-01

    The development of a laboratory EUV lithography tool based on a laser plasma source, a 10x Schwarzchild camera, and a magnetically levitated wafer stage is presented. Interferometric measurements of the camera aberrations are incorporated into physical-optics simulations to estimate the EUV imaging performance of the camera. Experimental results demonstrate the successful matching of five multilayer reflecting surfaces, coated to specification for a wide range of figure and incidence angle requirements. High-resolution, 10x-reduction images of a reflection mask are shown.

  15. Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains

    SciTech Connect

    Mikkelsen, A.; Schwenke, J.; Fordell, T.; Luo, G.; Kluender, K.; Hilner, E.; Anttu, N.; Lundgren, E.; Mauritsson, J.; Andersen, J. N.; Xu, H. Q.; L'Huillier, A.; Zakharov, A. A.

    2009-12-15

    We report the first experiments carried out on a new imaging setup, which combines the high spatial resolution of a photoemission electron microscope (PEEM) with the temporal resolution of extreme ultraviolet (XUV) attosecond pulse trains. The very short pulses were provided by high-harmonic generation and used to illuminate lithographic structures and Au nanoparticles, which, in turn, were imaged with a PEEM resolving features below 300 nm. We argue that the spatial resolution is limited by the lack of electron energy filtering in this particular demonstration experiment. Problems with extensive space charge effects, which can occur due to the low probe pulse repetition rate and extremely short duration, are solved by reducing peak intensity while maintaining a sufficient average intensity to allow imaging. Finally, a powerful femtosecond infrared (IR) beam was combined with the XUV beam in a pump-probe setup where delays could be varied from subfemtoseconds to picoseconds. The IR pump beam could induce multiphoton electron emission in resonant features on the surface. The interaction between the electrons emitted by the pump and probe pulses could be observed.

  16. Characterization of EUV resists for defectivity at 32nm

    NASA Astrophysics Data System (ADS)

    Montal, Ofir; Dolev, Ido; Rosenzweig, Moshe; Dotan, Kfir; Meshulach, Doron; Adan, Ofer; Levi, Shimon; Cai, Man-Ping; Bencher, Chris; Ngai, Chris S.; Jehoul, Christiane; Van Den Heuvel, Dieter; Hendrickx, Eric

    2011-03-01

    Extreme ultraviolet (EUV) lithography is considered as the leading patterning technology beyond the ArF-based optical lithography, addressing the need for transistor densification to meet Moore's Law. Theoretically, EUV lithography at 13.5nm wavelength meets the resolution requirements for 1xnm technology nodes. However, there are several major challenges in the development of EUV lithography for mass production of advanced CMOS devices. These include the development of high power EUV light sources, EUV optics, EUV masks, EUV resists, overlay accuracy, and metrology and inspection capabilities. In particular, it is necessary to ensure that effective defect control schemes will be made available to reduce the EUV lithography defectivity to acceptable levels. This paper presents a study on the wafer defectivity and characterization of patterned EUV resists, with the objective of providing a quantitative comparison between the defectivity of different resist materials and different stacks. Patterned wafers were printed using the ASML® EUV full-field Alpha-Demo Tool (ADT 0.25 NA) at imec. The EUV resist patterns were 32nm line/spaces. Several advanced resist types were screened experimentally. The different resist types and stacks were inspected using a DUV laser based brightfield inspection tool, followed by a SEM defect review and CD metrology measurements. The patterns were characterized in terms of defect types and defect density. We identified the major defect types and discuss factors that affect the defectivity level and pattern quality, such as resist type, exposure dose and focus. Defect scattering analysis of DUV polarized light at different polarizations was performed, to indicate on the inspection performance trends for a variety of defect types and sizes of the different resists and stacks. The scattering analysis shows that higher defect scattering is induced using polarized light.

  17. Observation of a Quasiperiodic Pulsation in Hard X-Ray, Radio, and Extreme-ultraviolet Wavelengths

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Nakariakov, Valery M.; Cho, Kyung-Suk

    2016-05-01

    We present a multiwavelength analysis of a quasiperiodic pulsation (QPP) observed in the hard X-ray (HXR), radio, and extreme-ultraviolet (EUV) channels during an M1.9 flare that occurred on 2011 September 23-24. The nonthermal HXR emission in 25-50 keV observed by RHESSI shows five distinct impulsive peaks of decaying amplitude with a period of about 3 minutes. A similar QPP was observed in the microwave emission recorded by the Nobeyama Radioheliograph and Polarimeter in the 2, 3.75, 9.4, and 17 GHz channels. Interestingly, the 3-minute QPP was also observed in the metric and decimetric radio frequencies (25-180, 245, 610 MHz) as repetitive type III bursts. Multiwavelength observations from the Solar Dynamics Observatory/Atmospheric Image Assembly, Hinode/SOT, and Solar TErrestrial RElations Observatory/SECCHI suggest a fan-spine topology at the eruption site, associated with the formation of a quasi-circular ribbon during the flare. A small filament was observed below the fan loops before the flare onset. The filament rose slowly and interacted with the ambient field. This behavior was followed by an untwisting motion of the filament. Two different structures of the filament showed an approximately 3-minute periodic alternate rotation in the clockwise and counterclockwise directions. The 3-minute QPP was found to highly correlate with 3-minute oscillations in a nearby sunspot. We suggest that the periodic reconnection (modulated either by a sunspot slow-mode wave or by an untwisting filament) at a magnetic null point most likely causes the repetitive particle acceleration, generating the QPP observed in HXR, microwave, and type III radio bursts.

  18. Observation of a Quasiperiodic Pulsation in Hard X-Ray, Radio, and Extreme-ultraviolet Wavelengths

    NASA Astrophysics Data System (ADS)

    Kumar, Pankaj; Nakariakov, Valery M.; Cho, Kyung-Suk

    2016-05-01

    We present a multiwavelength analysis of a quasiperiodic pulsation (QPP) observed in the hard X-ray (HXR), radio, and extreme-ultraviolet (EUV) channels during an M1.9 flare that occurred on 2011 September 23–24. The nonthermal HXR emission in 25–50 keV observed by RHESSI shows five distinct impulsive peaks of decaying amplitude with a period of about 3 minutes. A similar QPP was observed in the microwave emission recorded by the Nobeyama Radioheliograph and Polarimeter in the 2, 3.75, 9.4, and 17 GHz channels. Interestingly, the 3-minute QPP was also observed in the metric and decimetric radio frequencies (25–180, 245, 610 MHz) as repetitive type III bursts. Multiwavelength observations from the Solar Dynamics Observatory/Atmospheric Image Assembly, Hinode/SOT, and Solar TErrestrial RElations Observatory/SECCHI suggest a fan-spine topology at the eruption site, associated with the formation of a quasi-circular ribbon during the flare. A small filament was observed below the fan loops before the flare onset. The filament rose slowly and interacted with the ambient field. This behavior was followed by an untwisting motion of the filament. Two different structures of the filament showed an approximately 3-minute periodic alternate rotation in the clockwise and counterclockwise directions. The 3-minute QPP was found to highly correlate with 3-minute oscillations in a nearby sunspot. We suggest that the periodic reconnection (modulated either by a sunspot slow-mode wave or by an untwisting filament) at a magnetic null point most likely causes the repetitive particle acceleration, generating the QPP observed in HXR, microwave, and type III radio bursts.

  19. Partially Coherent Quantitative Phase Retrieval with Applications to Extreme Ultraviolet Lithography

    NASA Astrophysics Data System (ADS)

    Claus, Rene Andre

    This dissertation presents a new quantitative phase retrieval algorithm that fully models partially coherent imaging in microscopes. Unlike existing algorithms, our algorithm fully considers the pupil function and illumination by using the Weak Object Transfer Function (WOTF). Using an iterative approach, we extend the applicability of the WOTF beyond weakly scattering objects. This allows almost any measurement to be used during phase retrieval. As an example of how this feature can be used to invent practical new measurement schemes, we present the illumination switched pupil. This measurement uses a phase contrast objective and varied illumination to maximize the sensitivity of the microscope to both the phase and amplitude of the sample. Using only two images, the complex field can be recovered with high sensitivity at almost all spatial frequencies. A complete model of imaging in the microscope enables self-calibration of the measurements and improved phase retrieval. Since all important characteristics of the microscope can be incorporated, an optimization over critical parameters, such as the best focus position and image alignment, can be performed after the images have been captured. This allows errors in the calibration to be corrected after the measurements have been performed, improving the accuracy of the recovered field while simplifying the experiments. To verify and apply the algorithm experimentally, we have performed phase retrieval measurements of Extreme Ultraviolet (EUV) photomasks on the zone plate microscope, SHARP, at Lawrence Berkeley National Laboratory (LBNL). Phase retrieval has enabled the quantitative analysis of multilayer roughness and defects. Experiments, comparing the size of defects measured using phase retrieval to measurements performed by AFM, indicate that AFM consistently underestimates the effective height of the buried multilayer defects by 1 nm. Other measurements of defects, comparing the recovered field extracted from

  20. Metrology of EUV masks by EUV-scatterometry and finite element analysis

    NASA Astrophysics Data System (ADS)

    Pomplun, Jan; Burger, Sven; Schmidt, Frank; Scholze, Frank; Laubis, Christian; Dersch, Uwe

    2008-05-01

    Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (~ 13 nm) novel reflective masks have to be used in the production process. A prerequisite to meet the high quality requirements for these EUV masks is a simple and accurate method for absorber pattern profile characterization. In our previous work we demonstrated that the Finite Element Method (FEM) is very well suited for the simulation of EUV scatterometry and can be used to reconstruct EUV mask profiles from experimental scatterometric data. In this contribution we apply an indirect metrology method to periodic EUV line masks with different critical dimensions (140 nm and 540 nm) over a large range of duty cycles (1:2, ... , 1:20). We quantitatively compare the reconstructed absorber pattern parameters to values obtained from direct AFM and CD-SEM measurements. We analyze the reliability of the reconstruction for the given experimental data. For the CD of the absorber lines, the comparison shows agreement of the order of 1nm. Furthermore we discuss special numerical techniques like domain decomposition algorithms and high order finite elements and their importance for fast and accurate solution of the inverse problem.

  1. EUV mask surface cleaning effects on lithography process performance

    SciTech Connect

    George, Simi; Baclea-an, Lorie Mae; Naulleau, Patrick; Chen, Robert J.; Liang, Ted

    2010-06-18

    The reflective, multilayer based, mask architectures for extreme ultraviolet (EUV) lithography are highly susceptible to surface oxidation and contamination. As a result, EUV masks are expected to undergo cleaning processes in order to maintain the lifetimes necessary for high volume manufacturing. For this study, the impact of repetitive cleaning of EUV masks on imaging performance was evaluated. Two, high quality industry standard, EUV masks are used for this study with one of the masks undergoing repeated cleaning and the other one kept as a reference. Lithographic performance, in terms of process window analysis and line edge roughness, was monitored after every two cleans and compared to the reference mask performance. After 8x clean, minimal degradation is observed. The cleaning cycles will be continued until significant loss imaging fidelity is found.

  2. Novel EUV resist development for sub-14nm half pitch

    NASA Astrophysics Data System (ADS)

    Hori, Masafumi; Naruoka, Takehiko; Nakagawa, Hisashi; Fujisawa, Tomohisa; Kimoto, Takakazu; Shiratani, Motohiro; Nagai, Tomoki; Ayothi, Ramakrishnan; Hishiro, Yoshi; Hoshiko, Kenji; Kimura, Toru

    2015-03-01

    Extreme ultraviolet (EUV) lithography has emerged as a promising candidate for the manufacturing of semiconductor devices at the sub-14nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. The success of EUV lithography for the high volume manufacturing of semiconductor devices depends on the availability of suitable resist with high resolution and sensitivity. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). In this paper, we investigated and developed new chemically amplified resist (CAR) materials to achieve sub-14 nm hp resolution. We found that both resolution and sensitivity were improved simultaneously by controlling acid diffusion length and efficiency of acid generation using novel PAG and sensitizer. EUV lithography evaluation results obtained for new CAR on Micro Exposure Tool (MET) and NXE3300 system are described and the fundamentals are discussed.

  3. Enhancement of EUV emission from a liquid microjet target by use of dual laser pulses

    NASA Astrophysics Data System (ADS)

    Higashiguchi, Takeshi; Rajyaguru, Chirag; Koga, Masato; Kawasaki, Keita; Sasaki, Wataru; Kubodera, Shoichi; Kikuchi, Takashi; Yugami, Noboru; Kawata, Shigeo; Andreev, Alexander A.

    2005-03-01

    Extreme ultraviolet (EUV) radiation at the wavelength of around 13nm waws observed from a laser-produced plasma using continuous water-jet. Strong dependence of the conversion efficiency (CE) on the laser focal spot size and jet diameter was observed. The EUV CE at a given laser spot size and jet diameter was further enhanced using double laser pulses, where a pre-pulse was used for initial heating of the plasma.

  4. Uncovering new thermal and mechanical behavior at the nanoscale using coherent extreme ultraviolet light

    NASA Astrophysics Data System (ADS)

    Hoogeboom-Pot, Kathleen Marie

    Tremendous recent progress in nanofabrication capabilities has made high-quality single-atomic layers and nanostructures with dimensions well below 50 nm commonplace, enabling unprecedented access to materials at the nanoscale. However, tools and techniques capable of characterizing the properties and function of nanosystems are still quite limited, leaving much of the fundamental physics that dominates material behavior in the deep nano-regime still unknown. Further understanding gained by studying nanoscale materials is critical both to fundamental science and to continued technological development. This thesis applies coherent extreme ultraviolet (EUV) light from tabletop high harmonic generation to study nanoscale systems on their intrinsic length and time scales (nanometers and femtoseconds, and above), specifically following thermal transport and acoustic dynamics. These studies have shown where and how nanostructured material properties can be quite different from their bulk counterparts. This has in turn allowed us to develop new theoretical descriptions to guide further work. By observing heat dissipation from the smallest nanostructure heat sources measured to date (at 20 nm in lateral size), this work uncovers a previously unobserved and unpredicted nanoscale thermal transport regime where both size and spacing of heat sources play a role in determining the heat dissipation effciency. Surprisingly, this shows that nanoscale heat sources can cool more quickly when spaced close together than when far apart. This discovery is significant to the engineering of thermal management in nanoscale systems and devices while also revealing new insight into the fundamental nature of thermal transport. Furthermore, we harness this new regime to demonstrate the first experimental measurement of the differential contributions of phonons with different mean free paths to thermal conductivity, down to mean free paths as short as 14 nm for the first time. The same

  5. Extreme ultraviolet observations from the voyager 2 encounter with saturn.

    PubMed

    Sandel, B R; Shemansky, D E; Broadfoot, A L; Holberg, J B; Smith, G R; McConnell, J C; Strobel, D F; Atreya, S K; Donahue, T M; Moos, H W; Hunten, D M; Pomphrey, R B; Linick, S

    1982-01-29

    Combined analysis of helium (584 angstroms) airglow and the atmospheric occultations of the star delta Scorpii imply a vertical mixing parameter in Saturn's upper atmosphere of K (eddy diffusion coefficient) approximately 8 x 10(7) square centimeters per second, an order of magnitude more vigorous than mixing in Jupiter's upper atmosphere. Atmospheric H(2) band absorption of starlight yields a preliminary temperature of 400 K in the exosphere and a temperature near the homopause of approximately 200 K. The energy source for the mid-latitude H(2) band emission still remains a puzzle. Certain auroral emissions can be fully explained in terms of electron impact on H(2), and auroral morphology suggests a link between the aurora and the Saturn kilometric radiation. Absolute optical depths have been determined for the entire C ring andparts of the A and B rings. A new eccentric ringlet has been detected in the C ring. The extreme ultraviolet reflectance of the rings is fairly uniform at 3.5 to 5 percent. Collisions may control the distribution of H in Titan's H torus, which has a total vertical extent of approximately 14 Saturn radii normal to the orbit plane. PMID:17771276

  6. Expected extreme ultraviolet spectrum of the lunar surface

    SciTech Connect

    Edwards, B.C.; Priedhorsky, W.C.; Smith, B.W. )

    1991-11-01

    The moon was recently observed to be a source of very soft x-ray emission. The emission was most intense at wavelengths longer than 62 {angstrom} and was attributed to Thomson scattering of solar x-rays. This observation prompted the authors to study the emissions expected from the lunar surface in the wavelength range between 90 and 500 {angstrom}. Photons in this wavelength range scatter inefficiently. Instead, the solar x-rays are absorbed in the first several microns of lunar regolith. The absorbed x-rays can excite the surface elements and result in fluorescent emission. The authors find that much of the L- and M-shell extreme ultraviolet fluorescence, in the wavelength range between 90 and 500 {angstrom}, have higher peak intensities than the scattered solar spectrum. The total integrated fluorescent emission is also higher than the total scattered solar radiation. The L-shell fluorescent radiation can be an indicator of the surface abundances of Si, Al, Mg and other major lunar elements.

  7. Imaging performance and test of extreme ultraviolet telescope

    NASA Astrophysics Data System (ADS)

    Yang, Lin; Cui, Tiangang; Chen, Bo

    2009-08-01

    The Extreme Ultraviolet Telescope (EUT) is composed of a set of four individual normal incidence multilayer-coated telescopes that obtained selected spectrum bandpass (131 A-304 A) of the solar atmosphere. Before the launch, it is necessary to calibrate the imaging performance of EUT. We build a test system for EUT by two ways. Resolution test was performed using 1951 Standard Air Force High Resolution Test target, and the optical resolution limits down to 0.96arc-second at 404.7nm. A pinhole as a target placed on the focal point of a collimator is illuminated mercury lump. The intensity distribution is obtained by knife-edge scanning with low noise photon-counting detector. The slope of the knife-edge scan is equal to the value of the line spread function (LSF). Based on these measurement, we calculate the e modulation transfer function, which is highly closed to the simulation result of zemax. The experiment result indicates that the test system works well. For further work, the working wavelength test will be done with the help of those experiment results.

  8. Extreme-ultraviolet ultrafast ARPES at high repetition rates

    NASA Astrophysics Data System (ADS)

    Buss, Jan; Wang, He; Xu, Yiming; Stoll, Sebastian; Zeng, Lingkun; Ulonska, Stefan; Denlinger, Jonathan; Hussain, Zahid; Jozwiak, Chris; Lanzara, Alessandra; Kaindl, Robert

    Time- and angle-resolved photoemission spectroscopy (trARPES) represents a powerful approach to resolve the electronic structure and quasiparticle dynamics in complex materials, yet is often limited in either momentum space (incident photon energy), probe sensitivity (pulse repetition rate), or energy resolution. We demonstrate a novel table-top trARPES setup that combines a bright 50-kHz source of narrowband, extreme ultraviolet (XUV) pulses at 22.3 eV with UHV photoemission instrumentation to sensitively access dynamics for a large momentum space. The output of a high-power Ti:sapphire amplifier is split to provide the XUV probe and intense photoexcitation (up to mJ/cm2) . A vacuum beamline delivers spectral and flux characterization, differential pumping, as well as XUV beam steering and toroidal refocusing onto the sample with high incident flux of 3x1011 ph/s. Photoemission studies are carried out in a customized UHV chamber equipped with a hemispherical analyzer (R4000), six-axis sample cryostat, and side chambers for sample loading, storage and preparation. An ARPES energy resolution down to 70 meV with the direct XUV output is demonstrated. We will discuss initial applications of this setup including Fermi surface mapping and trARPES of complex materials.

  9. Holographic optical elements for the extreme-ultravioletregime

    SciTech Connect

    Naulleau, Patrick P.; Salmassi, Farhad; Gullikson, Eric M.; Anderson, Erik H.

    2006-08-14

    As the development of extreme ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, makes it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such component is the diffractive optical element used, for example, in illumination systems to efficiently generate modified pupil fills. Here we demonstrate the fabrication and characterization of EUV binary phase-only computer-generated holograms allowing arbitrary far-field diffraction patterns to be generated.

  10. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOEpatents

    Ruffner, J.A.

    1999-06-15

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet (DUV) and Extreme Ultra-Violet (EUV) wavelengths. The method results in a product with minimum feature sizes of less than 0.10 [micro]m for the shortest wavelength (13.4 nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R[sup 2] factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates. 15 figs.

  11. Method for high-precision multi-layered thin film deposition for deep and extreme ultraviolet mirrors

    DOEpatents

    Ruffner, Judith Alison

    1999-01-01

    A method for coating (flat or non-flat) optical substrates with high-reflectivity multi-layer coatings for use at Deep Ultra-Violet ("DUV") and Extreme Ultra-Violet ("EUV") wavelengths. The method results in a product with minimum feature sizes of less than 0.10-.mu.m for the shortest wavelength (13.4-nm). The present invention employs a computer-based modeling and deposition method to enable lateral and vertical thickness control by scanning the position of the substrate with respect to the sputter target during deposition. The thickness profile of the sputter targets is modeled before deposition and then an appropriate scanning algorithm is implemented to produce any desired, radially-symmetric thickness profile. The present invention offers the ability to predict and achieve a wide range of thickness profiles on flat or figured substrates, i.e., account for 1/R.sup.2 factor in a model, and the ability to predict and accommodate changes in deposition rate as a result of plasma geometry, i.e., over figured substrates.

  12. Spectral observations of the extreme ultraviolet astronomical background radiation

    NASA Technical Reports Server (NTRS)

    Labov, S.; Bowyer, S.

    1988-01-01

    Observations in the FUV and soft X-ray bands suggest that the ISM contains several components of high-temperature gas (100,000-1 million K). If large volumes of local interstellar space are filled with this hot plasma, emission lines will be produced in the EUV. Diffuse EUV radiation, however, has only been detected with photometric instruments; no spectral measurements exist below 520 A. A unique grazing-incidence spectrometer to study the diffuse emission between 80 and 650 A with resolution 10-30 A was successfully flown on a sounding rocket in April 1986, and a preliminary analysis reveals several features. In addition to the expected interplanetary He I 584 A emission and the geocoronal He II 304 A emission, other features appear which may orginate in the hot ionized interstellar gas.

  13. Polarimetry of extreme ultraviolet lines in solar astronomy

    NASA Technical Reports Server (NTRS)

    Fineschi, Silvano; Hoover, Richard B.; Fontenla, Juan M.; Walker, Arthur B. C., Jr.

    1991-01-01

    Ways are suggested in which recent advancements in the fabrication of ultrasmooth, low scatter flow-polished mirror substrates and high-quality multilayer and interference film coatings can be used to create novel optical instruments for observing linear-polarization effects in the outer solar atmosphere. Attention is given to the observational parameters of all-reflective FUV/EUV imaging polarimeters; such a coronagraph/polarimeter, operating at Ly-alpha, could yield the first measurements of coronal vector magnetic fields.

  14. THE EFFECT OF HOT CORONAL ELECTRONS ON EXTREME-ULTRAVIOLET SPECTRAL LINES OF He II EMITTED BY SOLAR TRANSITION REGION PLASMAS

    SciTech Connect

    Feldman, U.; Ralchenko, Yu.; Doschek, G. A.

    2010-01-01

    The cause of the lower intensities of extreme-ultraviolet (EUV) He II lines emitted by coronal hole (CH) plasmas compared with quiet Sun (QS) plasmas has been the subject of many studies dating back over half a century. In this paper, we study the effect of small amounts of 'hot' electrons at coronal temperatures (T{sub e} = 1.4 x 10{sup 6} K) on the intensities of EUV He II lines, as well as on the intensities of EUV lines of C III, C IV, O III, and O IV emitted by 1.5 x 10{sup 4} K-1.5 x 10{sup 5} K (4.2 <= log T{sub e} <= 5.2) plasmas in the QS. We show that although the influence of a fraction as small as 10{sup -4}-10{sup -3} of hot electrons on the intensities of the C and O lines is noticeable, the effect on the intensities of the He lines is much larger, to the extent that it could explain the excess brightness of He II lines emitted by QS regions relative to CH plasmas.

  15. Photoionized plasmas induced in neon with extreme ultraviolet and soft X-ray pulses produced using low and high energy laser systems

    SciTech Connect

    Bartnik, A.; Wachulak, P.; Fok, T.; Węgrzyński, Ł.; Fiedorowicz, H.; Pisarczyk, T.; Chodukowski, T.; Kalinowska, Z.; Dudzak, R.; Dostal, J.; Krousky, E.; Skala, J.; Ullschmied, J.; Hrebicek, J.; Medrik, T.

    2015-04-15

    A comparative study of photoionized plasmas created by two soft X-ray and extreme ultraviolet (SXR/EUV) laser plasma sources with different parameters is presented. The two sources are based on double-stream Xe/He gas-puff targets irradiated with high (500 J/0.3 ns) and low energy (10 J/1 ns) laser pulses. In both cases, the SXR/EUV beam irradiated the gas stream, injected into a vacuum chamber synchronously with the radiation pulse. Irradiation of gases resulted in formation of photoionized plasmas emitting radiation in the SXR/EUV range. The measured Ne plasma radiation spectra are dominated by emission lines corresponding to radiative transitions in singly charged ions. A significant difference concerns origin of the lines: K-shell or L-shell emissions occur in case of the high and low energy irradiating system, respectively. In high energy system, the electron density measurements were also performed by laser interferometry, employing a femtosecond laser system. A maximum electron density for Ne plasma reached the value of 2·10{sup 18 }cm{sup −3}. For the low energy system, a detection limit was too high for the interferometric measurements, thus only an upper estimation for electron density could be made.

  16. EUV source power and lifetime: the most critical issues for EUV lithography

    NASA Astrophysics Data System (ADS)

    Stamm, Uwe; Kleinschmidt, Juergen; Gaebel, Kai; Birner, Henry; Ahmad, Imtiaz; Bolshukhin, Denis; Brudermann, Jesko; Chinh, Tran Duc; Flohrer, Frank; Goetze, Sven; Hergenhan, Guido; Kloepfel, Diethard; Korobotchko, Vladimir; Mader, Bjorn; Mueller, Rainer; Ringling, Jens; Schriever, Guido; Ziener, Christian

    2004-05-01

    Semiconductor chip manufacturers are expecting to use extreme ultraviolet (EUV) lithography for high volume manufacturing of DRAMs and ICs starting by the end of this decade. Among all the technologies and modules which have to be developed EUV sources at 13.5 nm are considered to be the most critical issue. Specifically the required output power of 115 W at the entrance of the illuminator system in combination with the required lifetimes of source components and collector optics make the source technology critical for EUV lithography. The present paper gives an update of the development status of EUV light sources at XTREME technologies, a joint venture of Lambda Physik AG, Goettingen, and Jenoptik LOS GmbH, Jena, Germany. Results on both laser produced plasma (LPP) and gas discharge produced plasma (GDPP), the two major technologies in EUV sources, are given. The LPP EUV sources use xenon-jet target systems and pulsed lasers with 500 W average power at up to 10 kHz developed at XTREME technologies. The maximum conversion efficiency from laser power into EUV in-band power is 1.0 % into 2p solid angle. 2.0 W EUV radiation is generated at 13.5 nm in 2p sr solid angle. The small source volume of < 0.3 mm diameter will allow large collection angles of 5 sr. The intermediate focus power is estimated to 1 W. Collector mirror lifetime tests showed 5 million pulses lifetime without debris mitigation. With debris mitigation in place lifetimes of more than 1 billion pulses are estimated. For the next generation of higher power EUV LPP sources a laser driver has been tested at 1.3 kW average laser power. This will lead to 5 W EUV power in intermediate focus. The GDPP EUV sources use the Z-pinch principle with efficient sliding discharge pre-ionization. Prototype commercial gas discharge sources with an EUV power of 35W in 2p sr were already delivered for integration into EUV microsteppers. These sources are equipped with a debris-filter which results in an optics lifetime

  17. SEMATECH's EUV program: a key enabler for EUVL introduction

    NASA Astrophysics Data System (ADS)

    Wurm, Stefan; Jeon, Chan-Uk; Lercel, Michael

    2007-03-01

    With the introduction of alpha tools, extreme ultraviolet lithography (EUVL) has reached a key milestone. Users of those tools must have access to critical EUV infrastructure capabilities to evaluate the technology in a pilot line operation. In cooperation with universities, national laboratories, suppliers, integrated device manufacturers, and other industry consortia, SEMATECH has been spearheading the worldwide effort to develop this EUV infrastructure in the source, mask, optics, and resist areas. In the process, SEMATECH's Mask Blank Development Center, its EUV Resist Test Center, and the EUV expertise built within the SEMATECH EUV program have become key enablers for the successful introduction of EUV technology. We will highlight the significant contributions that the SEMATECH EUV Program has made, and continues to make, to the worldwide EUV infrastructure development effort. Moving beyond the alpha tool phase, the industry must have a clear understanding of the challenges that need to be addressed before EUV beta tools can be successfully introduced as early as 2009. We will identify those areas that still need a substantial effort to overcome technical and business challenges to meet 32 nm half-pitch requirements in time. Although some of those areas are clearly EUV-specific, others are generic and impact other lithography technologies as well. One of the major attractions of EUVL is that it is an extendible technology that can likely support patterning for several technology generations. We will review the outlook for EUVL technology extendibility and discuss what the industry needs to start working on to enable EUVL's bright future and long lifetime.

  18. Spectral catalogue of the intermediate ionization states of iron in the extreme ultraviolet

    SciTech Connect

    Beiersdorfer, P.; Utter, S.B.; Brown, G.V.

    1998-05-13

    Using precisely controlled laboratory conditions we have begun to establish a spectral catalogue of the intermediate ionization states of iron, Fe IX - Fe XXIV, in the extreme ultraviolet. The measurements are being performed in support of the development of reliable modeling codes for the analysis of data from the Extreme Ultraviolet Explorer and future space astrophysics missions sensitive to extreme ultraviolet radiation. They aim to resolve the controversies surrounding the short-wavelength spectra of stellar coronae. Preliminary measurements showing the wealth of iron lines in the 50-120 {Angstrom} region are presented.

  19. The Solar Chromosphere/Corona Interface. I. Far-Ultraviolet to Extreme-Ultraviolet Observations and Modeling of Unresolved Coronal Funnels

    NASA Astrophysics Data System (ADS)

    Martínez-Galarce, Dennis S.; Walker, Arthur B. C., II; Barbee, Troy W., II; Hoover, Richard B.

    2003-03-01

    A coronal funnel model, developed by D. Rabin, was tested against a calibrated spectroheliogram recorded in the 170-175 Å bandpass. This image was recorded on board a sounding-rocket experiment flown on 1994 November 3, called the Multi-Spectral Solar Telescope Array II (MSSTA II). MSSTA, a joint project of Stanford University, the NASA Marshall Space Flight Center, and the Lawrence Livermore National Laboratory, is an observing platform composed of a set of normal-incidence, multilayer-coated optics designed to obtain narrow-bandpass, high-resolution images (1"-3") at selected far-ultraviolet (FUV), extreme-ultraviolet (EUV), and soft X-ray wavelengths (44-1550 Å). Using full-disk images centered at 1550 Å (C IV) and 173 Å (Fe IX/X), the funnel model, which is based on coronal back-heating, was tested against the data incorporating observed constraints on global coverage and measured flux. Found was a class of funnel models that could account for the quiescent, globally diffuse and unresolved emission seen in the 171-175 Å bandpass, where the funnels are assumed to be rooted in the C IV supergranular network. These models, when incorporated with the CHIANTI spectral code, suggest that this emission is mostly of upper transition region origin and primarily composed of Fe IX plasma. The funnels are found to have constrictions, Γ~6-20, which is in good agreement with the observations. Further, the fitted models simultaneously satisfy global areal constraints seen in both images; namely, that a global network of funnels must cover ~70%-95% of the total solar surface area seen in the 171-175 Å image, and <=45% of the disk area seen in the 1550 Å bandpass. These findings support the configuration of the EUV magnetic network as suggested by Reeves et al. and put forth in more detail by Gabriel. Furthermore, the models are in good agreement with differential emission measure estimates made of the transition region by J. C. Raymond & J. G. Doyle for temperatures

  20. The Solar Chromosphere/Corona Interface. I. Far-Ultraviolet to Extreme-Ultraviolet Observations and Modeling of Unresolved Coronal Funnels

    NASA Technical Reports Server (NTRS)

    Martinez-Galarce, Dennis S.; Walker, Arthur C., III; Barbee, Troy W., II; Hoover, Richard B.

    2003-01-01

    A coronal funnel model, developed by D. Rabin, was tested against a calibrated spectroheliogram recorded in the 170-1 75 A bandpass. This image was recorded on board a sounding-rocket experiment flown on 1994 November 3, called the Multi-Spectral Solar Telescope Array II (MSSTA II). MSSTA, a joint project of Stanford University, the NASA Marshall Space Flight Center, and the Lawrence Livermore National Laboratory' is an observing platform composed of a set of normal-incidence, multilayer-coated optics designed to obtain narrow-bandpass, high-resolution images (1 sec.- 3 sec.) at selected far-ultraviolet (FUV), extreme-ultraviolet (EUV), and soft X-ray wavelengths (44-1550 A). Using full disk images centered at 1550 A (C IV) and 173 A (Fe IX/X), the funnel model, which is based on coronal back-heating, was tested against the data incorporating observed constraints on global coverage and measured flux. Found was a class of funnel models that could account for the quiescent, globally diffuse and unresolved emission seen in the 171-175 A bandpass, where the funnels are assumed to be rooted in the C IV supergranular network. These models, when incorporated with the CHIANTI spectral code, suggest that this emission is mostly of upper transition region origin and primarily composed of Fe IX plasma. The funnels are found to have constrictions, Gamma approx. 6-20, which is in good agreement with the observations. Further, the fitted models simultaneously satisfy global areal constraints seen in both images; namely,that a global network of funnels must cover approx. 700 - 95% of the total solar surface area seen in the 171-175 A image, and a 5% of the disk area seen in the 1550 A bandpass. These findings support the configuration of the EUV magnetic network as suggested by Reeves et al. and put forth in more detail by Gabriel. Furthermore, the models are in good agreement with differential emission measure estimates made of the transition region by J. C. Raymond & J. G

  1. Analysis of extreme ultraviolet spectra from laser produced rhenium plasmas

    NASA Astrophysics Data System (ADS)

    Wu, Tao; Higashiguchi, Takeshi; Li, Bowen; Suzuki, Yuhei; Arai, Goki; Dinh, Thanh-Hung; Dunne, Padraig; O'Reilly, Fergal; Sokell, Emma; Liu, Luning; O'Sullivan, Gerry

    2015-08-01

    Extreme ultraviolet spectra of highly-charged rhenium ions were observed in the 1-7 nm region using two Nd:YAG lasers with pulse lengths of 150 ps and 10 ns, respectively, operating at a number of laser power densities. The maximum focused peak power density was 2.6 × 1014 W cm-2 for the former and 5.5 × 1012 W cm-2 for the latter. The Cowan suite of atomic structure codes and unresolved transition array (UTA) approach were used to calculate and interpret the emission properties of the different spectra obtained. The results show that n = 4-n = 4 and n = 4-n = 5 UTAs lead to two intense quasi-continuous emission bands in the 4.3-6.3 nm and 1.5-4.3 nm spectral regions. As a result of the different ion stage distributions in the plasmas induced by ps and ns laser irradiation the 1.5-4.3 nm UTA peak moves to shorter wavelength in the ps laser produced plasma spectra. For the ns spectrum, the most populated ion stage during the lifetime of this plasma that could be identified from the n = 4-n = 5 transitions was Re23+ while for the ps plasma the presence of significantly higher stages was demonstrated. For the n = 4-n = 4 4p64dN-4p54dN+1 + 4p64dN-14f transitions, the 4d-4f transitions contribute mainly in the most intense 4.7-5.5 nm region while the 4p-4d subgroup gives rise to a weaker feature in the 4.3-4.7 nm region. A number of previously unidentified spectral features produced by n = 4-n = 5 transitions in the spectra of Re XVI to Re XXXIX are identified.

  2. Detection of EUV emission from the low activity dwarf HD 4628: Evidence for a cool corona

    NASA Technical Reports Server (NTRS)

    Mathioudakis, M.; Drake, J. J.; Vedder, P. W.; Schmitt, J. H. M. M.; Bowyer, S

    1994-01-01

    We present observations of low activity late-type stars obtained with the Extreme Ultraviolet Explorer (EUVE). These stars are the slowest rotators, and acoustic heating may dominate their outer atmospheric heating process. We report detection of EUV emission from the low acitivity K dwarf HD 4628 during the EUVE Deep Survey in the Lexan/boran band. This detection, in conjunction with the non-detection of this object in the ROSAT Position Sensitive Proportional Counter (PSPC) all-sky survey, suggests the existence of a cool corona with a characteristic temperature of less than 10(exp 6) K. The flux and spectral signature are consistent with current theories of acoustic heating.

  3. Ion debris characterization from a z-pinch extreme ultraviolet light source

    SciTech Connect

    Antonsen, Erik L.; Thompson, Keith C.; Hendricks, Matthew R.; Alman, Darren A.; Jurczyk, Brian E.; Ruzic, D.N.

    2006-03-15

    An XTREME Technologies XTS 13-35 extreme ultraviolet (EUV) light source creates a xenon z pinch that generates 13.5 nm light. Due to the near x-ray nature of light at this wavelength, extremely smooth metal mirrors for photon collection must be employed. These are exposed to the source debris. Dissolution of the z-pinch gas column results in high-energy ion and neutral release throughout the chamber that can have adverse effects on mirror surfaces. The XTREME commercial EUV emission diagnostic chamber was designed to maximize diagnostic access to the light and particulate emissions from the z pinch. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z pinch is followed by ejection of multiply charged ions and fast neutral particles that make up an erosive flux to chamber surfaces. Attenuation of this erosive flux to optical surfaces is attempted by inclusion of a debris mitigation tool consisting of foil traps and neutral buffer gas flow. Characterization of the z-pinch ejecta is performed with a spherical sector energy analyzer (ESA) that diagnoses fast ion species by energy-to-charge ratio using ion time-of-flight (ITOF) analysis. This is used to evaluate the debris tool's ability to divert direct fast ions from impact on optic surfaces. The ITOF-ESA is used to characterize both the energy and angular distribution of the direct fast ions. Xe{sup +} up to Xe{sup +4} ions have been characterized along with Ar{sup +} (the buffer gas used), W{sup +}, Mo{sup +}, Si{sup +}, Fe{sup +}, and Ni{sup +}. Energy spectra for these species from 0.5 up to 13 keV are defined at 20 deg. and 30 deg. from the pinch centerline in the chamber. Results show a drop in ion flux with angular increase. The dominant species is Xe{sup +} which peaks around 8 keV. Ion flux measured against buffer gas flow rate suggests that the direct fast ion population is significantly attenuated through increases in buffer

  4. Ion debris characterization from a z-pinch extreme ultraviolet light source

    NASA Astrophysics Data System (ADS)

    Antonsen, Erik L.; Thompson, Keith C.; Hendricks, Matthew R.; Alman, Darren A.; Jurczyk, Brian E.; Ruzic, D. N.

    2006-03-01

    An XTREME Technologies XTS 13-35 extreme ultraviolet (EUV) light source creates a xenon z pinch that generates 13.5 nm light. Due to the near x-ray nature of light at this wavelength, extremely smooth metal mirrors for photon collection must be employed. These are exposed to the source debris. Dissolution of the z-pinch gas column results in high-energy ion and neutral release throughout the chamber that can have adverse effects on mirror surfaces. The XTREME commercial EUV emission diagnostic chamber was designed to maximize diagnostic access to the light and particulate emissions from the z pinch. The principal investigation is characterization of the debris field and the erosive effects on optics present. Light emission from the z pinch is followed by ejection of multiply charged ions and fast neutral particles that make up an erosive flux to chamber surfaces. Attenuation of this erosive flux to optical surfaces is attempted by inclusion of a debris mitigation tool consisting of foil traps and neutral buffer gas flow. Characterization of the z-pinch ejecta is performed with a spherical sector energy analyzer (ESA) that diagnoses fast ion species by energy-to-charge ratio using ion time-of-flight (ITOF) analysis. This is used to evaluate the debris tool's ability to divert direct fast ions from impact on optic surfaces. The ITOF-ESA is used to characterize both the energy and angular distribution of the direct fast ions. Xe+ up to Xe+4 ions have been characterized along with Ar+ (the buffer gas used), W+, Mo+, Si+, Fe+, and Ni+. Energy spectra for these species from 0.5 up to 13 keV are defined at 20° and 30° from the pinch centerline in the chamber. Results show a drop in ion flux with angular increase. The dominant species is Xe+ which peaks around 8 keV. Ion flux measured against buffer gas flow rate suggests that the direct fast ion population is significantly attenuated through increases in buffer gas flow rate. This does not address momentum transfer from

  5. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    NASA Astrophysics Data System (ADS)

    Chen, Hong; Wang, Xinbing; Duan, Lian; Lan, Hui; Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-01

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer-Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  6. Angular distribution of ions and extreme ultraviolet emission in laser-produced tin droplet plasma

    SciTech Connect

    Chen, Hong; Duan, Lian; Lan, Hui; Wang, Xinbing Chen, Ziqi; Zuo, Duluo; Lu, Peixiang

    2015-05-21

    Angular-resolved ion time-of-flight spectra as well as extreme ultraviolet radiation in laser-produced tin droplet plasma are investigated experimentally and theoretically. Tin droplets with a diameter of 150 μm are irradiated by a pulsed Nd:YAG laser. The ion time-of-flight spectra measured from the plasma formed by laser irradiation of the tin droplets are interpreted in terms of a theoretical elliptical Druyvesteyn distribution to deduce ion density distributions including kinetic temperatures of the plasma. The opacity of the plasma for extreme ultraviolet radiation is calculated based on the deduced ion densities and temperatures, and the angular distribution of extreme ultraviolet radiation is expressed as a function of the opacity using the Beer–Lambert law. Our results show that the calculated angular distribution of extreme ultraviolet radiation is in satisfactory agreement with the experimental data.

  7. 100W EUV light-source key component technology update for HVM

    NASA Astrophysics Data System (ADS)

    Hori, Tsukasa; Kawasuji, Yasufumi; Tanaka, Hiroshi; Watanabe, Yukio; Shiraishi, Yutaka; Abe, Tamotsu; Okamoto, Takeshi; Kodama, Takeshi; Nakarai, Hiroaki; Yamazaki, Taku; Okazaki, Shinji; Saitou, Takashi; Mizoguchi, Hakaru

    2016-03-01

    Gigaphoton Inc. develops a high-power laser produced plasma extreme ultraviolet (LPP EUV) light source for high volume manufacturing which enables sub-10nm critical layer patterning for semiconductor device fabrication. A technology update of key components of a 100 W LPP-EUV light source is given in this paper. The key components efficiently produce a stable plasma and evacuate the tin debris from the EUV vessel with a magnetic debris mitigation system. The chosen technology guarantees therefore a high-power and long-life EUV light source system. Each component is described with updated data. The latest system performance results are also presented. They were obtained from our proto LPP-EUV light systems which support 100 W output power.

  8. Fabrication of Thiol-Ene "Clickable" Copolymer-Brush Nanostructures on Polymeric Substrates via Extreme Ultraviolet Interference Lithography.

    PubMed

    Dübner, Matthias; Gevrek, Tugce N; Sanyal, Amitav; Spencer, Nicholas D; Padeste, Celestino

    2015-06-01

    We demonstrate a new approach to grafting thiol-reactive nanopatterned copolymer-brush structures on polymeric substrates by means of extreme ultraviolet (EUV) interference lithography. The copolymer brushes were designed to contain maleimide functional groups as thiol-reactive centers. Fluoropolymer films were exposed to EUV radiation at the X-ray interference lithography beamline (XIL-II) at the Swiss Light Source, in order to create radical patterns on their surfaces. The radicals served as initiators for the copolymerization of thiol-ene "clickable" brushes, composed of a furan-protected maleimide monomer (FuMaMA) and different methacrylates, namely, methyl methacrylate (MMA), ethylene glycol methyl ether methacrylate (EGMA), or poly(ethylene glycol) methyl ether methacrylate (PEGMA). Copolymerization with ethylene-glycol-containing monomers provides antibiofouling properties to these surfaces. The number of reactive centers on the grafted brush structures can be tailored by varying the monomer ratios in the feed. Grafted copolymers were characterized by using attenuated total reflection infrared (ATR-IR) spectroscopy. The reactive maleimide methacrylate (MaMA) units were utilized to conjugate thiol-containing moieties using the nucleophilic Michael-addition reaction, which proceeds at room temperature without the need for any metal-based catalyst. Using this approach, a variety of functionalities was introduced to yield polyelectrolytes, as well as fluorescent and light-responsive polymer-brush structures. Functionalization of the brush structures was demonstrated via ATR-IR and UV-vis spectroscopy and fluorescence microscopy, and was also indicated by a color switch. Furthermore, grafted surfaces were generated via plasma activation, showing a strongly increased wettability for polyelectrolytes and a reversible switch in static water contact angle (CA) of up to 18° for P(EGMA-co-MaMA-SP) brushes, upon exposure to alternating visible and UV-light irradiation

  9. Optimization of high average power FEL beam for EUV lithography

    NASA Astrophysics Data System (ADS)

    Endo, Akira

    2015-05-01

    Extreme Ultraviolet Lithography (EUVL) is entering into high volume manufacturing (HVM) stage, with high average power (250W) EUV source from laser produced plasma at 13.5nm. Semiconductor industry road map indicates a scaling of the source technology more than 1kW average power by high repetition rate FEL. This paper discusses on the lowest risk approach to construct a prototype based on superconducting linac and normal conducting undulator, to demonstrate a high average power 13.5nm FEL equipped with optimized optical components and solid state lasers, to study FEL application in EUV lithography.

  10. Segmentation of extreme ultraviolet solar images via multichannel fuzzy clustering

    NASA Astrophysics Data System (ADS)

    Barra, Vincent; Delouille, Véronique; Hochedez, Jean-François

    2008-09-01

    The study of the variability of the solar corona and the monitoring of its traditional regions (Coronal Holes, Quiet Sun and Active Regions) are of great importance in astrophysics as well as in view of the Space Weather and Space Climate applications. Here we propose a multichannel unsupervised spatially constrained fuzzy clustering algorithm that automatically segments EUV solar images into Coronal Holes, Quiet Sun and Active Regions. Fuzzy logic allows to manage the various noises present in the images and the imprecision in the definition of the above regions. The process is fast and automatic. It is applied to SoHO EIT images taken from February 1997 till May 2005, i.e. along almost a full solar cycle. Results in terms of areas and intensity estimations are consistent with previous knowledge. The method reveal the rotational and other mid-term periodicities in the extracted time series across solar cycle 23. Further, such an approach paves the way to bridging observations between spatially resolved data from imaging telescopes and time series from radiometers. Time series resulting form the segmentation of EUV coronal images can indeed provide an essential component in the process of reconstructing the solar spectrum.

  11. ULTRAVIOLET AND EXTREME-ULTRAVIOLET EMISSIONS AT THE FLARE FOOTPOINTS OBSERVED BY ATMOSPHERE IMAGING ASSEMBLY

    SciTech Connect

    Qiu Jiong; Longcope, Dana W.; Liu Wenjuan; Sturrock, Zoe; Klimchuk, James A.

    2013-09-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 A emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare. We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  12. Ultraviolet and Extreme-Ultraviolet Emissions at the Flare Footpoints Observed by Atmosphere Imaging Assembly

    NASA Technical Reports Server (NTRS)

    Qiu, Jiong; Sturrock, Zoe; Longcope, Dana W.; Klimchuk, James A.; Liu, Wen-Juan

    2013-01-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 A emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare.We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  13. Ultraviolet and Extreme-ultraviolet Emissions at the Flare Footpoints Observed by Atmosphere Imaging Assembly

    NASA Astrophysics Data System (ADS)

    Qiu, Jiong; Sturrock, Zoe; Longcope, Dana W.; Klimchuk, James A.; Liu, Wen-Juan

    2013-09-01

    A solar flare is composed of impulsive energy release events by magnetic reconnection, which forms and heats flare loops. Recent studies have revealed a two-phase evolution pattern of UV 1600 Å emission at the feet of these loops: a rapid pulse lasting for a few seconds to a few minutes, followed by a gradual decay on timescales of a few tens of minutes. Multiple band EUV observations by the Atmosphere Imaging Assembly further reveal very similar signatures. These two phases represent different but related signatures of an impulsive energy release in the corona. The rapid pulse is an immediate response of the lower atmosphere to an intense thermal conduction flux resulting from the sudden heating of the corona to high temperatures (we rule out energetic particles due to a lack of significant hard X-ray emission). The gradual phase is associated with the cooling of hot plasma that has been evaporated into the corona. The observed footpoint emission is again powered by thermal conduction (and enthalpy), but now during a period when approximate steady-state conditions are established in the loop. UV and EUV light curves of individual pixels may therefore be separated into contributions from two distinct physical mechanisms to shed light on the nature of energy transport in a flare. We demonstrate this technique using coordinated, spatially resolved observations of UV and EUV emissions from the footpoints of a C3.2 thermal flare.

  14. Time-resolved study of the extreme-ultraviolet emission and plasma dynamics of a sub-Joule, fast capillary discharge

    SciTech Connect

    Valenzuela, J. C.; Wyndham, E. S.; Favre, M.

    2015-08-15

    In this work, we discuss experimental observations on the dynamics of a fast, low energy capillary discharge when operated in argon and its properties as an intense source of extreme-ultraviolet (EUV) radiation. The discharge pre-ionization and self-triggering were accomplished by the use of the hollow cathode effect. This allowed a compact size and low inductance discharge with multi-kA current level and a quarter-period of ∼10 ns at sub-Joule energy level. We used the novel moiré and schlieren diagnostics with a 12 ps laser to obtain the time evolution of the line electron density and to study the plasma dynamics. EUV spectroscopy and filtered diodes were also implemented to estimate the plasma temperature and density throughout the evolution of the discharge. EUV source size was measured by using a filtered slit-wire camera. We observed that EUV emission starts from a compressed plasma on axis during the second quarter-period of the current and continues until the fifth quarter-period. Ionization levels from Ar VII to X were observed. By comparing the EUV emission spectra with synthetic spectra, we found that at the onset of emission (∼7 ns), the plasma is well fitted by a single Maxwellian electron distribution function with T{sub e} ∼ 12 eV and n{sub e} ∼ 10{sup 17 }cm{sup −3}. Close to peak emission (∼13 ns), plasma temperature and density increase to ∼20 eV and n{sub e} ∼ 10{sup 18 }cm{sup −3}, respectively. However, in order to successfully match the experimental data, a two component electron distribution function was necessary. Later in time, a smaller fraction in the high energy component and higher temperature suggests homogenization of the plasma. The moiré and schlieren diagnostics showed multiple radial compression-waves merging on axis throughout the discharge; they are an important heating mechanism that leads to a period of severe turbulence at peak EUV emission. It was also observed that emission

  15. High power LPP EUV source system development status

    NASA Astrophysics Data System (ADS)

    Lin, Benjamin Szu-Min; Brandt, David; Farrar, Nigel

    2009-12-01

    Extreme ultraviolet (EUV) technology has been recognized as the major lithography technology for 22 nm HP and beyond to fulfill Moore's Law, which predicts that circuit dimensions shrink 70% every 2~3 years in order to achieve cost down and obtain greater functionality per unit area. EUV source power is one of the key factors in determining the cost-effectiveness of EUVL compared to other lithography technologies, like double patterning. Only when EUV power can achieve a certain level, the cost of EUV lithography under high volume manufacturing (HVM) can become much more competitive than that of double patterning techniques. In this paper, the performance of the first production Cymer high power laser produced plasma (LPP) EUV source integrated with a 5 sr multi-layer mirror (MLM) collector and fully integrated debris mitigation will be shown. The latest results on power generation, stable and efficient collection, and clean transmission of EUV light through the intermediate focus will be presented. The lifetime of the MLM collector is a critical parameter in the development of extreme ultraviolet LPP lithography sources. Debris mitigation techniques are used to inhibit reflectivity degradation from deposition of target material, sputtering of the multilayer coating, and implantation of incident particles, which can reduce the efficiency of the MLM collector during exposure. The far field images of MLM collector are recorded by intermediate focus metrology with a CCD camera to determine the reflectivity status of the MLM collector during exposure. The results of these debris mitigation techniques are compared through multiple-hour EUV exposure. Testing shows cleanliness at the source-scanner interface acceptable to the limit of detection.

  16. Extreme ultraviolet photometer for observations of helium in interplanetary space.

    PubMed

    Bowyer, S; Freeman, J; Paresce, F; Lampton, M

    1977-03-01

    A four-channel photometer sensitive to two solar EUV lines which are resonantly scattered by helium gas was developed for flight on the Apollo-Soyuz Test Project. Two channels observed the 58.4-nm line of He I and used helium gas resonant absorption cells to determine the intensities of the center and wings of that line. The other two channels observed the 30.4-nm line of He II. The instrument surveyed much of the celestial sphere during a series of slow rolling maneuvers by the Apollo spacecraft. The experiment operated properly, and usable data were obtained. Study of the distributions of flux seen, and of the ratio of 58.4-nm fluxes seen with gas cells full and empty, will refine current understanding of several poorly known properties of the local interstellar medium. Study of the 30.4-nm flux distribution will refine present knowledge of the structure of the earth's plasmasphere. PMID:20168575

  17. Extreme-ultraviolet observations of global coronal wave rotation

    SciTech Connect

    Attrill, G. D. R.; Long, D. M.; Green, L. M.; Harra, L. K.; Van Driel-Gesztelyi, L.

    2014-11-20

    We present evidence of global coronal wave rotation in EUV data from SOHO/EIT, STEREO/EUVI, and SDO/AIA. The sense of rotation is found to be consistent with the helicity of the source region (clockwise for positive helicity, anticlockwise for negative helicity), with the source regions hosting sigmoidal structures. We also study two coronal wave events observed by SDO/AIA where no clear rotation (or sigmoid) is observed. The selected events show supporting evidence that they all originate with flux rope eruptions. We make comparisons across this set of observations (both with and without clear sigmoidal structures). On examining the magnetic configuration of the source regions, we find that the nonrotation events possess a quadrupolar magnetic configuration. The coronal waves that do show a rotation originate from bipolar source regions.

  18. Discrepant responses of the global electron content to the solar cycle and solar rotation variations of EUV irradiance

    NASA Astrophysics Data System (ADS)

    Chen, Yiding; Liu, Libo; Le, Huijun; Zhang, Hui

    2015-05-01

    In this paper, the responses of the ionosphere to the solar cycle and solar rotation variations of extreme ultraviolet (EUV) irradiance are comparatively investigated using daily mean global electron content (GEC) and 0.1-50 nm EUV daily flux. GEC is well correlated with EUV on both the solar cycle and solar rotation timescales; however, the responses of GEC to the solar cycle and solar rotation variations of EUV are significantly different in terms of the following two aspects: (1) There is a significant time lag between the solar rotation variations of GEC and EUV; the lag is dominated by a 1-day lag and generally presents a decrease trend with solar activity decreasing. For the solar cycle variations of GEC and EUV, however, there are no evident time lags. (2) The GEC versus EUV slopes are different for the solar cycle and solar rotation variations of GEC and EUV; the solar cycle GEC versus EUV slope is higher than the solar rotation GEC versus EUV slope, and this difference occurs in different seasons and latitudinal bands. The results present an aspect of the difference between ionospheric climatology and weather.

  19. Extreme ultraviolet lithography and three dimensional integrated circuit—A review

    NASA Astrophysics Data System (ADS)

    Wu, Banqiu; Kumar, Ajay

    2014-03-01

    Extreme ultraviolet lithography (EUVL) and three dimensional integrated circuit (3D IC) were thoroughly reviewed. Since proposed in 1988, EUVL obtained intensive studies globally and, after 2000, became the most promising next generation lithography method even though challenges were present in almost all aspects of EUVL technology. Commercial step-and-scan tools for preproduction are installed now with full field capability; however, EUV source power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 200 W in-band power at IF, current tools can supply only approximately 40-55 W. EUVL resist has improved significantly in the last few years, with 13 nm line/space half-pitch resolution being produced with approximately 3-4 nm line width roughness (LWR), but LWR needs 2× improvement. Creating a defect-free EUVL mask is currently an obstacle. Actual adoption of EUVL for 22 nm and beyond technology nodes will depend on the extension of current optical lithography (193 nm immersion lithography, combined with multiple patterning techniques), as well as other methods such as 3D IC. Lithography has been the enabler for IC performance improvement by increasing device density, clock rate, and transistor rate. However, after the turn of the century, IC scaling resulted in short-channel effect, which decreases power efficiency dramatically, so clock frequency almost stopped increasing. Although further IC scaling by lithography reduces gate delay, interconnect delay and memory wall are dominant in determining the IC performance. 3D IC technology is a critical technology today because it offers a reasonable route to further improve IC performance. It increases device density, reduces the interconnect delay, and breaks memory wall with the application of 3D stacking using through silicon via. 3D IC also makes one chip package have more functional diversification than those enhanced only by shrinking the size of the features

  20. Mechanism of extreme ultraviolet photoresist development with a supercritical CO2 compatible salt.

    PubMed

    Zweber, Amy E; Wagner, Mark; DeYoung, James; Carbonell, Ruben G

    2009-06-01

    The mechanism of developing an extreme ultraviolet (EUV) commercial photoresist with supercritical carbon dioxide (scCO2) and a CO2 compatible salt (CCS) solution was studied. The cloud point of CCS in CO2 and the pressure at which the photoresist dissolves in CCS/scCO2 were determined for temperatures between 35 and 50 degrees C. For this temperature range, it was found that the CCS cloud point ranges between 11.2 and 16.1 MPa, while the photoresist dissolution point ranges from 15.5 to 21.3 MPa. The kinetics of the CCS/scCO2 development was modeled using a simplified rate equation, where the rate-limiting steps were photoresist dissolution and mass transfer. The effects of temperature, mass transfer, pressure, and CCS concentration on photoresist removal rate were further explored experimentally using a high-pressure quartz crystal microbalance (QCM). Increasing temperature (35-50 degrees C) at a constant fluid density of 0.896 g/mL was found to increase the removal rate following an Arrhenius behavior with a photoresist dissolution energy of activation, Ea, equal to 79.0 kJ/mol. The removal was zero order in CCS concentration, signifying photoresist phase transfer, photoresist mass transfer, or both were rate limiting. Mass transfer studies showed that circulation enhanced the photoresist removal rate, but that the mass transfer coefficient was independent of temperature from 35 degrees C to 50 degrees C. In pressure studies, increasing pressure (27.6-34.5 MPa) at a constant temperature of 40 degrees C increased the removal rate by enhancing the fluid density, but at 50 degrees C increasing pressure had little effect on the removal rate. When the total CCS concentration was in large global excess over the number of Bronsted acid groups in the polymer (2400:1 at 5 mM CCS concentration), the mass of photoresist removed varied linearly with time. At lower CCS concentrations but still in global excess of the number of Bronsted acid groups, the photoresist removal

  1. The design of an echelle spectrometer for diffuse extreme ultraviolet/far ultraviolet astronomy

    NASA Technical Reports Server (NTRS)

    Martin, Christopher

    1986-01-01

    The novel, relatively high-resolution nebular spectrometer design presented incorporates a mechanical precollimator with an objective echelle grating that proceeds to a cross-dispensing Wadsworth configuration; the minimum feasible number of reflections is employed in order to maximize EUV sensitivity. The configuration, which is noted to be capable of yielding a comparatively large field of view for optimal diffuse emission sensitivity, is compact and employs conventionally fabricated optical components and available microchannel plate detectors. The sensitivities obtainable approach the limit stipulated by Liouville's theorem.

  2. Calibration of photon counting imaging microchannel plate detectors for EUV astronomy

    NASA Technical Reports Server (NTRS)

    Siegmund, O. H. W.; Vallerga, J.; Jelinsky, P.

    1986-01-01

    The calibration of photon counting imaging detectors for satellite based EUV astronomy is a complex process designed to ensure the validity of the data received 'in orbit'. The methods developed to accomplish calibration of microchannel plate detectors for the Extreme Ultraviolet Explorer are described and illustrated. The characterization of these detectors can be subdivided into three categories: stabilization, performance tests, and environmental tests.

  3. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Suematsu, Kenichi; Terao, Kenji

    2016-03-01

    Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system's inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the "defectivity" from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

  4. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

    NASA Astrophysics Data System (ADS)

    Hirano, Ryoichi; Hatakeyama, Masahiro; Terao, Kenji; Watanabe, Hidehiro

    2016-04-01

    Extreme ultraviolet lithography (EUVL) patterned mask defect detection is a major issue that must be addressed to realize EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics for integration into a mask inspection system, and the resulting PEM system performs well in half-pitch (hp) 16-nm-node EUVL patterned mask inspection applications. A learning system has been used in this PEM patterned mask inspection tool. The PEM identifies defects using the "defectivity" parameter that is derived from the acquired image characteristics. The learning system has been developed to reduce the labor and the costs associated with adjustment of the PEM's detection capabilities to cope with newly defined mask defects. The concepts behind this learning system and the parameter optimization flow are presented here. The learning system for the PEM is based on a library of registered defects. The learning system then optimizes the detection capability by reconciling previously registered defects with newly registered defects. Functional verification of the learning system is also described, and the system's detection capability is demonstrated by applying it to the inspection of hp 11-nm EUV masks. We can thus provide a user-friendly mask inspection system with reduced cost of ownership.

  5. ROSAT and EUVE observations of B stars

    NASA Astrophysics Data System (ADS)

    Cassinelli, Joseph P.

    1994-11-01

    Recent observations of the X-ray and EUV emission of non-supergiant B stars are summarized. As compared with O stars, the X-rays of most of the near-main-sequence B stars are soft, and the stars show a departure from the Lx = 1007Lbol relation. Using line driven wind models to provide an estimate of the density distribution, it is concluded that a major fraction of the wind emission measure is hot, whereas in shocked wind theory less than 10 percent of the wind emission measure should be hot. The X-ray observations suggest that all of the B stars are X-ray emitters with a basal X-ray luminosity of about 10-8.5Lbol. For the Be stars, the X-ray emission is that which is expected from a normal B-star wind coming from the poles, as in the Wind Compressed Disk (WCD) model of Be-stars. None of the stars, including the beta Cep stars, show noticeable variability in their X-rays. Extreme Ultraviolet Explorer (EUVE) observations of epsilon CMa B2 II, find it to be the brightest object in the EUV sky at 500 to 700 A. It shows a Lyman continuum flux that is a factor of 30 higher than line blanketed model atmospheres. The EUVE spectra show emission lines both from high stages of ionization ( Fe IX to Fe XVI) and from low stages ( HeII and O III). The He II Lyman alpha results from recombination follwing X-ray photoionization in the wind, and the O III resonance line is found to be present because of the Bowen fluorescence mechanism. Thus, there is and intersting coupling between the wind production by the EUV photospheric emission, the production of X-ray and line EUV emission by winds, and the production of fluorescence by recombination in the wind; all of these processes are now observable in B stars.

  6. A search for EUV emission from cataclysmic variables

    SciTech Connect

    Polidan, R.S.; Mauche, C.W.

    1989-01-01

    Voyager far- and extreme-ultraviolet (500--1200 /angstrom/) spectrophotometric observations of five cataclysmic variables (the dwarf novae SS Cyg and VW Hyi and the novalike variables V3885 Sgr, RW Sex, and IX Vel) are combined with neutral hydrogen column densities derived from the curve-of-growth analysis of interstellar absorption lines in high-resolution IUE spectra to place upper limits on the emitted flux in the 600--700 /angstrom/ EUV band. No EUV emission was observed in any of the five cataclysmic variables. Relatively high neutral hydrogen column densities (> 10/sup 19/ cm/sup /minus/2/) in SS Cyg, V3885 Sgr, RW Sex, and IX Vel preclude any discussion of their intrinsic EUV emission. For VW Hyi, the low neutral hydrogen column, and excellent Voyager data place severe upper limits on the intrinsic EUV flux of this cataclysmic variable. The derived EUV limits for VW Hyi are compared to predictions from various models and Voyager observations of EUV emission from nearby hot white dwarfs. 8 refs., 2 figs., 2 tabs.

  7. EUV induced low temperature SF6-based plasma

    NASA Astrophysics Data System (ADS)

    Bartnik, A.; Wachulak, P.; Fiedorowicz, H.; Skrzeczanowski, W.; Jarocki, R.; Fok, T.; Węgrzyński, Ł.

    2016-03-01

    In this work spectral investigations of low temperature F-rich photoionized plasmas were performed. The photoionized plasmas were created by irradiation of SF6 gas with intense EUV (extreme ultraviolet) radiation pulses. Two laser plasma EUV sources of different parameters used in the experiments were based on 0.8 J /4ns and 10 J/ 10 ns Nd:YAG lasers respectively. Both sources operated at 10 Hz repetition rate. The EUV radiation was focused using a dedicated reflective collector onto the gas stream, injected into a vacuum chamber synchronously with the EUV pulses. Irradiation of the SF6 gas resulted in dissociative ionization of the molecules, leading to creation of SFn+ ions and fluorine atoms. Further photo- or electron impact ionization and excitation processes allow for formation of photoionized plasmas emitting radiation in the wide spectral range. Emission spectra were measured in the EUV and optical ranges. The EUV spectra contained multiple spectral lines, originating from F II, F III and S II ions. The UV/VIS spectra were composed of spectral lines corresponding to radiative transitions in F II, F I and S II species. A computer simulation of the F II spectrum was performed using a collisional-radiative PrismSPECT code. Parameters of the photoionized plasmas were estimated by fitting the spectrum obtained from the simulations to the experimental one. Apart from that, the electron temperature was estimated employing Boltzmann plots based on the UV/VIS spectrum.

  8. Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)

    SciTech Connect

    Hector, S D; Shell, M; Taylor, J S; Tong, W M

    1999-09-28

    The mask is deemed one of the areas that require significant research and development in EUVL. Silicon wafers will be used for mask substrates for an alpha-class EUVL exposure tool due to their low-defect levels and high quality surface finish. However, silicon has a large coefficient of thermal expansion that leads to unacceptable image distortion due to absorption of EUV light. A low thermal expansion glass or glass-ceramic is likely to be required in order to meet error budgets for the 70nm node and beyond. Since EUVL masks are used in reflection, they are coated with multilayers prior to patterning. Surface imperfections, such as polishing marks, particles, scratches, or digs, are potential nucleation sites for defects in the multilayer coating, which could result in the printed defects. Therefore we are accelerating developments in the defect reduction and surface finishing of low thermal expansion mask substrates in order to understand long-term issues in controlling printable defects, and to establish the infrastructure for supplying masks. In this paper, we explain the technical requirements for EUVL mask substrates and describe our efforts in establishing a SEMI standard for EUVL masks. We will also report on the early progress of our suppliers in producing low thermal-expansion mask substrates for our development activities.

  9. PROMINENCE PLASMA DIAGNOSTICS THROUGH EXTREME-ULTRAVIOLET ABSORPTION

    SciTech Connect

    Landi, E.; Reale, F.

    2013-07-20

    In this paper, we introduce a new diagnostic technique that uses EUV and UV absorption to determine the electron temperature and column emission measure, as well as the He/H relative abundance of the absorbing plasma. If a realistic assumption on the geometry of the latter can be made and a spectral code such as CHIANTI is used, then this technique can also yield the absorbing plasma hydrogen and electron density. This technique capitalizes on the absorption properties of hydrogen and helium at different wavelength ranges and temperature regimes. Several cases where this technique can be successfully applied are described. This technique works best when the absorbing plasma is hotter than 15,000 K. We demonstrate this technique on AIA observations of plasma absorption during a coronal mass ejection eruption. This technique can be easily applied to existing observations of prominences and cold plasmas in the Sun from almost all space missions devoted to the study of the solar atmosphere, which we list.

  10. Molybdenum-silicon multilayer mirrors for the extreme ultraviolet

    NASA Technical Reports Server (NTRS)

    Barbee, T. W., Jr.; Mrowka, S.; Hetrick, M. C.

    1985-01-01

    Multilayer structures of molybdenum and silicon have been synthesized by sputter deposition onto flat silicon single-crystal silicon substrates and spherically ground (0.5and 22.0-m radii) fused silica substrates; and the reflectivities for 170.4-A (72.8-eV), 160.1-A (77.4-eV), and 228-A (54.4-eV) light measured at near normal incidence. Observed peak values ranged from 26.2 to 78 percent, the highest reflectivities occurring closest to normal incidence. Energy resolutions were about 10 in all cases. Model calculations were performed using optical constants and experimentally determined multilayer structural parameters. In all cases the measured reflectivities were equal to or larger (by up to a factor of 2) than the calculated values, a result attributed to uncertainty in the optical constants used in the calculations. Experimental and calculated angular-peak positions and energy resolutions were in good agreement. The high reflectivities of these molybdenum-silicon structures will make possible application of traditional optics approaches in the EUV and support new developments including free-electron lasers.

  11. Plasma-based EUV light source

    DOEpatents

    Shumlak, Uri; Golingo, Raymond; Nelson, Brian A.

    2010-11-02

    Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

  12. Contamination Effects on EUV Optics

    NASA Technical Reports Server (NTRS)

    Tveekrem, J.

    1999-01-01

    During ground-based assembly and upon exposure to the space environment, optical surfaces accumulate both particles and molecular condensibles, inevitably resulting in degradation of optical instrument performance. Currently, this performance degradation (and the resulting end-of-life instrument performance) cannot be predicted with sufficient accuracy using existing software tools. Optical design codes exist to calculate instrument performance, but these codes generally assume uncontaminated optical surfaces. Contamination models exist which predict approximate end-of-life contamination levels, but the optical effects of these contamination levels can not be quantified without detailed information about the optical constants and scattering properties of the contaminant. The problem is particularly pronounced in the extreme ultraviolet (EUV, 300-1,200 A) and far (FUV, 1,200-2,000 A) regimes due to a lack of data and a lack of knowledge of the detailed physical and chemical processes involved. Yet it is in precisely these wavelength regimes that accurate predictions are most important, because EUV/FUV instruments are extremely sensitive to contamination.

  13. A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

    SciTech Connect

    Wieggers, R. C.; Goedheer, W. J.; Akdim, M. R.; Bijkerk, F.; Zegeling, P. A.

    2008-01-01

    We present a kinetic simulation of the plasma formed by photoionization in the intense flux of an extreme ultraviolet lithography (EUVL) light source. The model is based on the particle-in-cell plus Monte Carlo approach. The photoelectric effect and ionization by electron collisions are included. The time evolution of the low density argon plasma is simulated during and after the EUV pulse and the ion-induced sputtering of the coating material of a normal incidence collector mirror is computed. The relation between the time and position at which the ions are created and their final energy is studied, revealing how the evolution and the properties of the sheath influence the amount of sputtered material. The influence of the gas pressure and the source intensity is studied, evaluating the behavior of Ar{sup +} and Ar{sup 2+} ions. A way to reduce the damage to the collector mirror is presented.

  14. EUV-VUV Photolysis of Molecular Ice Systems of Astronomical Interest

    NASA Technical Reports Server (NTRS)

    Wu, C. Y. Robert; Judge, D. L.; Cheng, B.-M.

    2006-01-01

    We wish to report laboratory simulation results obtained from extreme ultraviolet (EUV) and vacuum ultraviolet (VUV) photolysis of molecular ices relevant to the cometary-type ices and icy satellites of planetary systems. Specifically, we identify the type of molecules that form in the ices and/or those that come off the ice surfaces, quantify their production yields and destruction yields, understand their production mechanisms, and ascertain their significance in astronomical environments.

  15. Effect of ultraviolet radiation on microorganisms as a principal extremal factor of space environment.

    PubMed

    Fedorova, R I

    1964-01-01

    1. The problem of the transport of viable germs through interplanetary space has recently acquired special interest arising from the necessity of sterilization of space ships. 2. Of all cosmic extremal factors ultraviolet solar radiation is the most dangerous for microorganisms. The intensity of the most bactericidal region of ultraviolet radiation at a distance of one astronomical unit from the sun is 2 x 10(3) erg per cm2. 3. Sensitivity of microorganisms to ultraviolet rays varies in a large range. For the most resistant forms the lethal dose is approximately 440000 erg per cm2. 4. The penetrating capacity of ultraviolet radiation is very low, and therefore, even insignificant amounts of organic or mineral substances may protect the bacterial cell. 5. Dust particles of terrestrial origin carrying on themselves bacterial spores exert upon the latter a protective effect against ultraviolet radiation. PMID:11881651

  16. Fluorescence of molecular hydrogen excited by solar extreme-ultraviolet radiation

    NASA Technical Reports Server (NTRS)

    Feldman, P. D.; Fastie, W. G.

    1973-01-01

    During trans-earth coast, the Apollo 17 ultraviolet spectrometer was scheduled to make observations of the far ultraviolet background in selected regions of the sky. In the course of one of these observations, the spacecraft fuel cells were routinely purged of excess hydrogen and water vapor. The ultraviolet fluorescence spectrum of the purged molecular hydrogen excited by solar extreme ultraviolet radiation is interpreted by absorption of solar L-beta and L-gamma radiation in the nearly resonant (6, 0) and (11, 0) Lyman bands. The results are deemed significant for ultraviolet spectroscopic investigations of the atmospheres of the moon and planets since Lyman-band fluorescence provides an unambiguous means of identification of molecular hydrogen in upper atmospheres.

  17. Present Status and Future of EUV (Extreme Ultra Violet) Light Source Research 4.Laser Produced Plasma Light Sources 4.2High Average Power Laser Produced Plasma EUV Light Sources

    NASA Astrophysics Data System (ADS)

    Endo, Akira

    This paper reviews the research and development of the high average power, extreme ultraviolet light source based on laser produced plasma by EUVA. The technology is based on a liquid Xe micro jet, high repetition rate short pulse Nd:YAG laser, and various diagnostics for plasma optimization are described.

  18. A 3-D numerical study of pinhole diffraction to predict the accuracy of EUV point diffraction interferometry

    SciTech Connect

    Goldberg, K.A. |; Tejnil, E.; Bokor, J. |

    1995-12-01

    A 3-D electromagnetic field simulation is used to model the propagation of extreme ultraviolet (EUV), 13-nm, light through sub-1500 {Angstrom} dia pinholes in a highly absorptive medium. Deviations of the diffracted wavefront phase from an ideal sphere are studied within 0.1 numerical aperture, to predict the accuracy of EUV point diffraction interferometersused in at-wavelength testing of nearly diffraction-limited EUV optical systems. Aberration magnitudes are studied for various 3-D pinhole models, including cylindrical and conical pinhole bores.

  19. Physical processes in EUV sources for microlithography

    NASA Astrophysics Data System (ADS)

    Banine, V. Y.; Koshelev, K. N.; Swinkels, G. H. P. M.

    2011-06-01

    The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL tool operates at a wavelength of 13.5 nm, which requires the following new developments. The light production mechanism changes from conventional lamps and lasers to relatively high-temperature emitting plasmas. The light transport, mainly refractive for deep ultraviolet (DUV), should be reflective for EUV. The source specifications as derived from the customer requirements on wafer throughput mean that the output EUV source power has to be hundreds of watts. This in its turn means that tens to hundreds of kilowatts of dissipated power has to be managed in a relatively small volume. In order to keep lithography costs as low as possible, the lifetime of the components should be as long as possible and at least of the order of thousands of hours. This poses a challenge for the sources, namely how to design and manufacture components robust enough to withstand the intense environment of high heat dissipation, flows of several keV ions as well as the atomic and particular debris within the source vessel. As with all lithography tools, the imaging requirements demand a narrow illumination bandwidth. Absorption of materials at EUV wavelengths is extreme with extinguishing lengths of the order of tens of nanometres, so the balance between high transmission and spectral purity requires careful engineering. All together, EUV lithography sources present technological challenges in various fields of physics such as plasma, optics and material science. These challenges are being tackled by the source manufacturers and investigated extensively in the research facilities around the world. An overview of the published results on the topic as well as the analyses of the physical processes behind the proposed solutions will be presented in this paper.

  20. Particle reduction and control in EUV etching process

    NASA Astrophysics Data System (ADS)

    Jun, JeaYoung; Ha, TaeJoong; Kim, SangPyo; Yim, DongGyu

    2014-10-01

    As the device design rule shrinks, photomask manufacturers need to have advanced defect controllability during the ARC (Anti-Reflection Coating) and ABS (Absorber) etch in an EUV (extreme ultraviolet) mask. Therefore we studied etching techniques of EUV absorber film to find out the evasion method of particle generation. Usually, Particles are generated by plasma ignition step in etching process. When we use the standard etching process, ARC and ABS films are etched step by step. To reduce the particle generation, the number of ignition steps need to decrease. In this paper, we present the experimental results of in-situ EUV dry etching process technique for ARC and ABS, which reduces the defect level significantly. Analysis tools used for this study are as follows; TEM (for cross-sectional inspection) , SEM (for in-line monitoring ) and OES (for checking optical emission spectrum)