Science.gov

Sample records for ferrite films grown

  1. Self-organized single crystal mixed magnetite/cobalt ferrite films grown by infrared pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    de la Figuera, Juan; Quesada, Adrián; Martín-García, Laura; Sanz, Mikel; Oujja, Mohamed; Rebollar, Esther; Castillejo, Marta; Prieto, Pilar; Muñoz-Martín, Ángel; Aballe, Lucía; Marco, José F.

    2015-12-01

    We have grown mixed magnetite/cobalt ferrite epitaxial films on SrTiO3 by infrared pulsed-laser deposition. Diffraction experiments indicate epitaxial growth with a relaxed lattice spacing. The films are flat with two distinct island types: nanometric rectangular mounds in two perpendicular orientations, and larger square islands, attributed to the two main components of the film as determined by Mössbauer spectroscopy. The origin of the segregation is suggested to be the oxygen-deficiency during growth.

  2. Nanocolumnar interfaces and enhanced magnetic coercivity in preferentially oriented cobalt ferrite thin films grown using oblique-angle pulsed laser deposition.

    PubMed

    Mukherjee, Devajyoti; Hordagoda, Mahesh; Hyde, Robert; Bingham, Nicholas; Srikanth, Hariharan; Witanachchi, Sarath; Mukherjee, Pritish

    2013-08-14

    Highly textured cobalt ferrite (CFO) thin films were grown on Si (100) substrates using oblique-angle pulsed laser deposition (α-PLD). X-ray diffraction and in-depth strain analysis showed that the obliquely deposited CFO films had both enhanced orientation in the (111) crystal direction as well as tunable compressive strains as a function of the film thicknesses, in contrast to the almost strain-free polycrystalline CFO films grown using normal-incidence PLD under the same conditions. Using in situ optical plume diagnostics the growth parameters in the α-PLD process were optimized to achieve smoother film surfaces with roughness values as low as 1-2 nm as compared to the typical values of 10-12 nm in the normal-incidence PLD grown films. Cross-sectional high resolution transmission electron microscope images revealed nanocolumnar growth of single-crystals of CFO along the (111) crystallographic plane at the film-substrate interface. Magnetic measurements showed larger coercive fields (∼10 times) with similar saturation magnetization in the α-PLD-grown CFO thin films as compared to those deposited using normal-incidence PLD. Such significantly enhanced magnetic coercivity observed in CFO thin films make them ideally suited for magnetic data storage applications. A growth mechanism based on the atomic shadowing effect and strain compression-relaxation mechanism was proposed for the obliquely grown CFO thin films. PMID:23829642

  3. Magnetic Properties of Polycrystalline Bismuth Ferrite Thin Films Grown by Atomic Layer Deposition.

    PubMed

    Jalkanen, Pasi; Tuboltsev, Vladimir; Marchand, Benoît; Savin, Alexander; Puttaswamy, Manjunath; Vehkamäki, Marko; Mizohata, Kenichiro; Kemell, Marianna; Hatanpää, Timo; Rogozin, Valentin; Räisänen, Jyrki; Ritala, Mikko; Leskelä, Markku

    2014-12-18

    The atomic layer deposition (ALD) method was applied to grow thin polycrystalline BiFeO3 (BFO) films on Pt/SiO2/Si substrates. The 50 nm thick films were found to exhibit high resistivity, good morphological integrity, and homogeneity achieved by the applied ALD technique. Magnetic characterization revealed saturated magnetization of 25 emu/cm(3) with temperature-dependent coercivity varying from 5 to 530 Oe within the temperature range from 300 to 2 K. Magnetism observed in the films was found to change gradually from ferromagnetic spin ordering to pinned magnetic domain interactions mixed with weak spin-glass-like behavior of magnetically frustrated antiferromagnetic/ferromagnetic (AFM-FM) spin ordering depending on the temperature and magnitude of the applied magnetic field. Antiferromagnetic order of spin cycloids was broken in polycrystalline films by crystal sizes smaller than the cycloid length (∼60 nm). Uncompensated spincycloids and magnetic domain walls were found to be the cause of the high magnetization of the BFO films. PMID:26273981

  4. Epitaxial single crystalline ferrite films for high frequency applications

    SciTech Connect

    Suzuki, Y.; Dover, R.B. van; Korenivski, V.; Werder, D.; Chen, C.H.; Felder, R.J.; Phillips, J.M.

    1996-11-01

    The successful growth of single crystal ferrites in thin film form is an important step towards their future incorporation into integrated circuits operating at microwave frequencies. The authors have successfully grown high quality single crystalline spinel ferrite thin films of (Mn,Zn)Fe{sub 2}O{sub 4} and CoFe{sub 2}O{sub 4} on (100) and (110) SrTiO{sub 3} and MgAl{sub 2}O{sub 4} at low temperature. These ferrite films are buffered with spinel structure layers that are paramagnetic at room temperature. In contrast to ferrite films grown directly on the substrates, ferrite films grown on buffered substrates exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the immediately underlying layer. X-ray, RBS, AFM and TEM analysis provide a consistent picture of the structural properties of these ferrite films. The authors then use this technique to grow exchange-coupled bilayers of single crystalline CoFe{sub 2}O{sub 4} and (Mn,Zn)Fe{sub 2}O{sub 4}. In these bilayers, they observe strong exchange coupling across the interface that is similar in strength to the exchange coupling in the individual layers.

  5. Control of magnetization reversal in oriented strontium ferrite thin films

    SciTech Connect

    Roy, Debangsu Anil Kumar, P. S.

    2014-02-21

    Oriented Strontium Ferrite films with the c axis orientation were deposited with varying oxygen partial pressure on Al{sub 2}O{sub 3}(0001) substrate using Pulsed Laser Deposition technique. The angle dependent magnetic hysteresis, remanent coercivity, and temperature dependent coercivity had been employed to understand the magnetization reversal of these films. It was found that the Strontium Ferrite thin film grown at lower (higher) oxygen partial pressure shows Stoner-Wohlfarth type (Kondorsky like) reversal. The relative importance of pinning and nucleation processes during magnetization reversal is used to explain the type of the magnetization reversal with different oxygen partial pressure during growth.

  6. Room-temperature growth of Ni-Zn-Cu ferrite/PTFE composite thick films on PET via aerosol deposition

    NASA Astrophysics Data System (ADS)

    Kim, Hyung-Jun; Kwon, Oh-Yun; Jang, Chan-Ick; Kim, Tae Kyoung; Oh, Jun Rok; Yoon, Young Joon; Kim, Jong-Hee; Nam, Song-Min; Koh, Jung-Hyuk

    2013-11-01

    Ni-Zn-Cu ferrite and Ni-Zn-Cu ferrite/poly-tetra-fluoro-ethylene (PTFE) composite-thick-films were grown at room temperature on polyethylene terephthalate (PET) sheets via aerosol deposition (AD) as a magnetic shielding sheet for near-field communication. An 80 µm-thick Ni-Zn-Cu ferrite/PTFE composite-thick-film was grown on the PET sheet when 2.0 wt. % PTFE starting powder was used. The real relative permeability µ r ' and the imaginary permeability µ r ″ of the Ni-Zn-Cu ferrite thick film were 10.1 and 2.1 at 13.56 MHz, respectively. In the case of the composite thick film, µ r ' and µ r ″ decreased to 3.9 and 1.3, respectively, at 13.56 MHz; with the addition of the PTFE.

  7. LPE growth of Mn, Ni- and Al-substituted copper ferrite films

    NASA Astrophysics Data System (ADS)

    van der Straten, P. J. M.; Metselaar, R.

    1980-06-01

    Single-crystalline Mn-, Ni-, and Al-substituted copper ferrite films are grown by the LPE method from a PbO-B2O3 flux on (111)-MgO substrates. Solid solutions between copper ferrite and Mn3O4, NiFe2O4, and CuAl2O4 are obtained. The segregation coefficients for Ni and Al are shown to be linearly dependent on the growth temperature. From domain-structure observations and from torque measurements it is concluded that a positive uniaxial anisotropy is present in the copper ferrite films. After stress relief at the deposition temperature a stress develops during cooling to room temperature due to a difference in thermal expansion coefficients of film and substrate. This stress is responsible for the observed anisotropy.

  8. Energy of domain walls in ferrite films

    NASA Astrophysics Data System (ADS)

    Gomez, M. E.; Prieto, P.; Mendoza, A.; Guzman, O.

    2007-03-01

    MnZn Ferrite films were deposited by RF sputtering on (001) single crystal MgO substrates. AFM images show an increment in grain size with the film thickness. Grains with diameter between φ ˜ 70 and 700 nm have been observed. The coercive field Hc as a function of the grain size reaches a maximum value of about 80 Oe for φc˜ 300 nm. The existence of a multidomain structure associated with a critical grain size was identified by Magneto-optical Kerr effect technique (MOKE). The transition of the one-domain regime to the two-domain regime was observed at a critical grain size of Dc˜ 530 nm. This value agree with values predicted previously. The Jiles-Atherton model (JAM) was used to discuss the experimental hysteresis loops. The k pinning parameter obtained from JAM shows a maximum value of k/μo = 67 Am^2 for grains with Lc˜ 529 nm. The total energy per unit area E was correlated with k and D. We found a simple phenomenological relationship given by E α kD; where D is the magnetic domain width.

  9. Nanocrystalline zinc ferrite films studied by magneto-optical spectroscopy

    SciTech Connect

    Lišková-Jakubisová, E. Višňovský, Š.; Široký, P.; Hrabovský, D.; Pištora, J.; Sahoo, Subasa C.; Prasad, Shiva; Venkataramani, N.; Bohra, Murtaza; Krishnan, R.

    2015-05-07

    Ferrimagnetic Zn-ferrite (ZnFe{sub 2}O{sub 4}) films can be grown with the ferromagnetic resonance linewidth of 40 Oe at 9.5 GHz without going through a high temperature processing. This presents interest for applications. The work deals with laser ablated ZnFe{sub 2}O{sub 4} films deposited at O{sub 2} pressure of 0.16 mbar onto fused quartz substrates. The films about 120 nm thick are nanocrystalline and their spontaneous magnetization, 4πM{sub s}, depends on the nanograin size, which is controlled by the substrate temperature (T{sub s}). At T{sub s} ≈ 350 °C, where the grain distribution peaks around ∼20–30 nm, the room temperature 4πM{sub s} reaches a maximum of ∼2.3 kG. The films were studied by magnetooptical polar Kerr effect (MOKE) spectroscopy at photon energies between 1 and 5 eV. The complementary characteristics were provided by spectral ellipsometry (SE). Both the SE and MOKE spectra confirmed ferrimagnetic ordering. The structural details correspond to those observed in MgFe{sub 2}O{sub 4} and Li{sub 0.5}Fe{sub 2.5}O{sub 4} spinels. SE experiments confirm the insulator behavior. The films display MOKE amplitudes somewhat reduced with respect to those in Li{sub 0.5}Fe{sub 2.5}O{sub 4} and MgFe{sub 2}O{sub 4} due to a lower degree of spinel inversion and nanocrystalline structure. The results indicate that the films are free of oxygen vacancies and Fe{sup 3+}-Fe{sup 2+} exchange.

  10. Structural and magnetic studies of Cr doped nickel ferrite thin films

    NASA Astrophysics Data System (ADS)

    Panwar, Kalpana; Heda, N. L.; Tiwari, Shailja; Bapna, Komal; Choudhary, R. J.; Phase, D. M.; Ahuja, B. L.

    2016-05-01

    We have studied the structural and magnetic properties of Cr doped nickel ferrite thin films deposited on Si (100) and Si (111) using pulsed laser deposition technique. The films were deposited under vacuum and substrate temperature was kept at 700˚C. X-ray diffraction analysis revealed that films on both substrates have single phase cubic spinel structure. However, the film grown on Si (111) shows better crystalline behavior. Fourier transform infrared spectroscopy suggests that films on both substrates have mixed spinel structure. These films show magnetic hysteresis behavior and magnetization value of film on Si (100) is larger than that on Si (111). It turns out that structural and magnetic properties of these two films are correlated.

  11. Magnetooptical and crystalline properties of sputtered garnet ferrite film on spinel ferrite buffer layer

    NASA Astrophysics Data System (ADS)

    Furuya, Akinori; Sasaki, Ai-ichiro; Morimura, Hiroki; Kagami, Osamu; Tanabe, Takaya

    2016-09-01

    The purpose of this study is to provide garnet films for volumetric magnetic holography. Volumetric magnetic holography usually employs an easily obtainable short-wavelength laser (visible light, not infrared light) with a large diffraction intensity. Bi-substituted garnet ferrite with a large Faraday rotation is promising for volumetric magnetic holography applications in the visible light region. However, a garnet film without a deteriorated layer must be obtained because a deteriorated layer (minute polycrystalline grains containing an amorphous phase) is formed during the initial deposition on a glass substrate. In particular, the required magnetooptical properties have not been obtained in a thin garnet film (100 nm or less) after annealing (1 h, 700 °C, oxygen atmosphere). Therefore, there is a need for excellent garnet films with the required magnetooptical (MO) properties even if the films are thin. By using a spinel ferrite buffer layer for garnet film deposition, we could obtain a thin garnet film with excellent MO properties. We determined the effect of the initial buffer layer on the crystallinity of the deposited garnet films by observing the film cross section. In addition, we undertook a qualitative estimation of the influence of the crystallinity and optical properties of the garnet film on a glass substrate with a spinel ferrite buffer layer.

  12. Growth and Properties of Magnetic Spinel Ferrite Thin Films and Heterostructures

    NASA Astrophysics Data System (ADS)

    Gupta, Arunava

    2013-03-01

    There is considerable interest in the growth of single crystal spinel ferrites films because of their numerous technological applications in areas such as microwave integrated devices, magnetoelectric coupling heterostructures, and potentially as an active barrier material in an emerging class of spintronic devices called spin filters. Unlike perovskites, the study of spinel ferrite films is quite limited in part due to the complex crystal structure with a large unit cell consisting of many interstitial sites and that the transition metal cations can adopt various oxidation states. We have grown high-quality, atomically smooth epitaxial ferrite (NiFe2O4, CoFe2O4 and LiFe5O8) films using chemical vapor deposition and pulsed laser deposition techniques and carried out detailed studies of their structural, magnetic and optical properties. Of particular interest are systematic studies on the formation of antiphase boundaries in epitaxial NiFe2O4 films grown on different substrates and the accurate determination of the band gap of this material using optical spectroscopy and first principles calculations. Additionally, we have grown ferrite films on piezoelectric substrates and observed large shifts in the ferromagnetic resonance profile due to magnetoelectric coupling resulting from electrostatic field-induced changes in the magnetic anisotropy field. Work done in collaboration with N. Z. Bao, W. H. Butler, R. Datta, B. S. Holinsworth, M. Iliev, S. Kanuri, S. V. Karthik, G. Kim, T. M. Klein, N. Li, M. Liu, P. R. LeClair, J. X. Ma, D. Mazumdar, T. Mewes, D. V. B. Murthy, J. L. Musfeldt, K. R. O'Neal, N. Pachauri, V. M. Petrov, H. Sato, S. Schäfer, L. Shen, H. Sims, G. Srinivasan, N. X. Sun, Q. -C. Sun, and Z. Zhou. The work was supported by ONR (Grant Number N00014-12-1-0102)

  13. Planar Millimeter Wave Notch Filters Based on Magnetostatic Wave Resonance in Barium Hexagonal Ferrite Thin Films

    NASA Astrophysics Data System (ADS)

    Lu, Lei; Song, Young-Yeal; Bevivino, Joshua; Wu, Mingzhong

    2010-10-01

    There is a critical need for planar millimeter (mm) wave devices. To meet this need, one important strategy is in the use of high-anisotropy hexagonal ferrite films. The high internal anisotropy field for the hexagonal ferrites can be used to realize low-loss devices in the 30-100 GHz regime without the need for high external magnetic fields. Previous work has demonstrated the use of M-type barium hexagonal ferrite (BaM) films and ferromagnetic resonance therein to make mm-wave notch filters. This presentation reports on a new mm-wave notch filter that uses magnetostatic wave (MSW) resonance in BaM films. The device consists of a BaM film strip positioned on the top of a coplanar waveguide (CPW), with the strip's length along the CPW signal line. The BaM strip was grown by pulsed laser deposition and had uniaxial anisotropy along the strip's length. The device showed a band-stop filtering response centered at 53 GHz in absence of external fields. One can increase this frequency with nonzero external fields. A reduction in the strip's width resulted in an enhancement in peak absorption. This filtering response resulted from MSW resonance across the BaM strip's width. The MSW modes were excited by CPW-produced non-uniform alternating magnetic fields.

  14. Epitaxy barium ferrite thin films on LiTaO3 substrate

    NASA Astrophysics Data System (ADS)

    Fang, H. C.; Ong, C. K.; Xu, S. Y.; Tan, K. L.; Lim, S. L.; Li, Y.; Liu, J. M.

    1999-08-01

    Barium hexaferrite (BaM) thin films were deposited on (0001) LiTaO3 substrates by pulsed laser deposition. Effects of the substrate temperature and oxygen gas pressure on the formation and quality of these films were studied. Films deposited at a substrate temperature of 800 °C and an oxygen pressure around 0.23 mbar showed the best c axis normal to the film plane with locked in-plane orientation. The saturation magnetization Ms and anisotropy field Ha measured by vibrating sample magnetometer were almost the same as those reported on bulk barium ferrite. Decreasing oxygen pressure hinders the formation of the Ba layer in BaM magnetoplumbite structure and gives rise to the spinel phase, which greatly decreases coercivity Hc of the films and finally destroys the whole BaM structure. Effects of the lattice mismatch and substrate-induced strains on the film structure were also studied. It was found that barium ferrite thin films grown on LiTaO3 substrates tend to choose a matching mode with compressional strains rather than shear strains.

  15. Growth, structure, morphology, and magnetic properties of Ni ferrite films

    PubMed Central

    2013-01-01

    The morphology, structure, and magnetic properties of nickel ferrite (NiFe2O4) films fabricated by radio frequency magnetron sputtering on Si(111) substrate have been investigated as functions of film thickness. Prepared films that have not undergone post-annealing show the better spinel crystal structure with increasing growth time. Meanwhile, the size of grain also increases, which induces the change of magnetic properties: saturation magnetization increased and coercivity increased at first and then decreased. Note that the sample of 10-nm thickness is the superparamagnetic property. Transmission electron microscopy displays that the film grew with a disorder structure at initial growth, then forms spinel crystal structure as its thickness increases, which is relative to lattice matching between substrate Si and NiFe2O4. PMID:23622034

  16. On-wafer millimeter wave notch filter based on barium hexagonal ferrite thin films on platinum

    NASA Astrophysics Data System (ADS)

    Harward, Ian Roylance

    In this work, the growth of BaM and Al doped Ba M thin films on Pt templates, layered on a Si wafer, is demonstrated using a newly developed metallo-organic decomposition (MOD) process. It is shown that the BaM films are polycrystalline, with preferred perpendicular c-axis grain orientation. The magnetic properties such as anisotropy field, saturation magnetization, and remnant magnetization are studied as a function of temperature and film composition, and are shown to be correlated to the film microstructure. It is shown that these films exhibit high remnant magnetization, a property not measured in BaM single crystals, meaning a biasing magnet may not be necessary for millimeter wave device applications. Ferromagnetic resonance (FMR) studies were performed on the ferrite films using the tool developed at UCCS for the study of high frequency magnetic materials, the broadband FMR (BFMR) system. The instrument is described in great detail, and the FMR studies on BaM show that the MOD-grown films exhibit narrow FMR linewidths, on the order of 150 Oe, and are therefore of sufficient quality for use in mm wave devices. Finally, notch filters using the Pt/BaM are demonstrated. The filters are based on a microstrip design, where the Pt serves as the ground plane and the BaM is part of the dielectric. The Ba M absorbs signals at the ferromagnetic resonance frequency, which takes place in the mm wave range. The filters described were based on pure BaM, but Al doped BaM could easily be used to increase the operating frequency of the device. The operating frequency of these devices is also tunable using an externally applied magnetic field.

  17. Effect of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films

    SciTech Connect

    Nongjai, R.; Khan, S.; Ahmad, H.; Khan, I.; Asokan, K.

    2013-06-03

    We present the influence of deposition pressure on the structural and magnetic properties of cobalt ferrite thin films. Thin films of Co ferrite were deposited by rf sputtering on Si (100) substrate and characterized by X - Ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Vibrating Sample Magnetometer (VSM). The XRD patterns showed the formation of crystalline single phase of the films. The particle size and surface roughness of the films were strongly influence by gas pressure. Hysteresis loops measured at room temperature showed the enhancement of magnetic properties with the increase of gas pressure which is attributed to the decrease of particle size.

  18. Dielectric properties of cobalt ferrite nanoparticles in ultrathin nanocomposite films.

    PubMed

    Alcantara, Gustavo B; Paterno, Leonardo G; Fonseca, Fernando J; Pereira-da-Silva, Marcelo A; Morais, Paulo C; Soler, Maria A G

    2013-12-01

    Multilayered nanocomposite films (thickness 50-90 nm) of cobalt ferrite nanoparticles (np-CoFe2O4, 18 nm) were deposited on top of interdigitated microelectrodes by the layer-by-layer technique in order to study their dielectric properties. For that purpose, two different types of nanocomposite films were prepared by assembling np-CoFe2O4 either with poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonic acid) or with polyaniline and sulfonated lignin. Despite the different film architectures, the morphology of both was dominated by densely-packed layers of nanoparticles surrounded by polyelectrolytes. The dominant effect of np-CoFe2O4 was also observed after impedance spectroscopy measurements, which revealed that dielectric behavior of the nanocomposites was largely influenced by the charge transport across nanoparticle-polyelectrolyte interfaces. For example, nanocomposites containing np-CoFe2O4 exhibited a single low-frequency relaxation process, with time constants exceeding 15 ms. At 1 kHz, the dielectric constant and the dissipation factor (tan δ) of these nanocomposites were 15 and 0.15, respectively. These values are substantially inferior to those reported for pressed pellets made exclusively of similar nanoparticles. Impedance data were further fitted with equivalent circuit models from which individual contributions of particle's bulk and interfaces to the charge transport within the nanocomposites could be evaluated. The present study evidences that such nanocomposites display a dielectric behavior dissimilar from that exhibited by their individual counterparts much likely due to enlarged nanoparticle-polyelectrolyte interfaces. PMID:24145704

  19. Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

    SciTech Connect

    Buršík, J.; Kužel, R.; Knížek, K.; Drbohlav, I.

    2013-07-15

    Thin films of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO{sub 3}(1 1 1) (ST) single crystal substrates using epitaxial SrFe{sub 12}O{sub 19} (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO{sub 3} substrate and both hexaferrite phases. - Graphical abstract: XRD pole figure and AFM patterns of Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} thin film epitaxially grown on SrTiO{sub 3}(1 1 1) single crystal using seeding layer templating. - Highlights: • Single phase Y-type hexagonal ferrite thin films were prepared by CSD method. • Seed M layer breaks into isolated single crystal islands and serves as a template. • Large seed grains grow by consuming the grains within the bulk of recoated film. • We explained the observed orientation relation of epitaxial domains. • Epitaxial growth on SrTiO{sub 3}(1 1 1) with relation (0 0 1){sub M,Y}//(1 1 1){sub ST}+[1 0 0]{sub M,Y}//[2 −1 −1]{sub ST}.

  20. Single layer porous gold films grown at different temperatures

    NASA Astrophysics Data System (ADS)

    Zhang, Renyun; Hummelgård, Magnus; Olin, Håkan

    2010-11-01

    Large area porous gold films can be used in several areas including electrochemical electrodes, as an essential component in sensors, or as a conducting material in electronics. Here, we report on evaporation induced crystal growth of large area porous gold films at 20, 40 and 60 °C. The gold films were grown on liquid surface at 20 °C, while the films were grown on the wall of beakers when temperature increased to 40 and 60 °C. The porous gold films consisted of a dense network of gold nanowires as characterized by TEM and SEM. TEM diffraction results indicated that higher temperature formed larger crystallites of gold wires. An in situ TEM imaging of the coalescence of gold nanoparticles mimicked the process of the growth of these porous films, and a plotting of the coalescence time and the neck radius showed a diffusion process. The densities of these gold films were also characterized by transmittance, and the results showed film grown at 20 °C had the highest density, while the film grown at 60 °C had the lowest consistent with SEM and TEM characterization. Electrical measurements of these gold films showed that the most conductive films were the ones grown at 40 °C. The conductivities of the gold films were related to the amount of contamination, density and the diameter of the gold nanowires in the films. In addition, a gold film/gold nanoparticle hybrid was made, which showed a 10% decrease in transmittance during hybridization, pointing to applications as chemical and biological sensors.

  1. Relations between magneto-optical properties and reactivity in cobalt-manganese ferrite thin films and powders

    NASA Astrophysics Data System (ADS)

    Bouet, Laurence; Tailhades, Philippe; Rousset, Abel

    1996-02-01

    Co-Mn spinel ferrites were prepared as submicron powders and thin films. Because of their finely divided state, these spinels could be oxidized at low temperatures to give novel cation-deficient ferrites. For these two material forms, the magneto-optical properties were found to be strongly dependent on the ferrite oxidation state. The highest coercivities and Faraday rotations were obtained when the ferrites were partially oxidized. These phenomena are attributed to the mechanical stress effect developed during the oxidation of the manganese ions. The properties of these ferrites could be of interest for magneto-optical recording applications. The first static recording tests were performed at 780 nm wavelength.

  2. Columnar grown copper films on polyimides strained beyond 100.

    PubMed

    Sun, Jeong-Yun; Lee, Hae-Ryung; Oh, Kyu Hwan

    2015-01-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a 'conductive net,' through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors. PMID:26337668

  3. Columnar grown copper films on polyimides strained beyond 100%

    PubMed Central

    Sun, Jeong-Yun; Lee, Hae-Ryung; Hwan Oh, Kyu

    2015-01-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a ‘conductive net,’ through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors. PMID:26337668

  4. Columnar grown copper films on polyimides strained beyond 100%

    NASA Astrophysics Data System (ADS)

    Sun, Jeong-Yun; Lee, Hae-Ryung; Hwan Oh, Kyu

    2015-09-01

    Many flexible electronic devices contain metal films on polymer substrates to satisfy requirements for both electrical conductivity and mechanical durability. Despite numerous trials to date, the stretchability of metal interconnects remains an issue. In this paper, we have demonstrated a stretchable metal interconnect through control of the texture of a copper film with columnar grown grains on a polyimide (PI) substrate. The columnar grown copper films (CGC films) were deposited by regulating radio frequency (RF) sputtering powers. CGC films were able to sustain their electrical conductivity at strains above 100%. Instead of ultimate electrical discontinuity by channel crack propagation, CGC films maintained their conductivity by forming ligament structures, or a ‘conductive net,’ through trapped micro-cracks. XRD, AFM and in situ SEM analysis were used to investigate these stretchable conductors.

  5. Synthesis and characterizations of microwave sintered ferrite powders and their composite films for practical applications

    NASA Astrophysics Data System (ADS)

    Shannigrahi, S. R.; Pramoda, K. P.; Nugroho, F. A. A.

    2012-01-01

    Phase pure single phase ferrite powders of (NixR1-x)0.5Zn0.5Fe2O4 (R=Mn, Co, Cu; x=0, 0.5) were manufactured using microwave sintering at 930 °C for 10 min in air atmosphere. The powders were characterized for their structure, microstructure, thermal, and magnetic properties. Selected powders were used as fillers to prepare their composite films using polymethyl methacrylate polymers as matrix. The composite films were prepared using the melt blending approach and were tested for their microstructure, thermal, and magnetic hysteresis loop as well as 3D magnetic field space mappings using an electromagnetic compatibility scanner. Among the studied ferrites, cobalt doped ferrites and their composites showed the best electromagnetic interference (EMI) shielding effectiveness value and have potential for practical EMI shielding applications.

  6. Chlorine gas sensing performance of palladium doped nickel ferrite thin films

    NASA Astrophysics Data System (ADS)

    Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

    2016-05-01

    NiFe2O4 and Pd:NiFe2O4 (Pd=1 w/o, 3 w/o and 5 w/o) thin films, p-type semiconducting oxides with an inverse spinel structure have been used as a gas sensor to detect chlorine. These films were prepared by spray pyrolysis technique and XRD was used to confirm the structure. The surface morphology was studied using SEM. Magnetization measurements were carried out at room temperature using SQUID VSM, which shows ferrimagnetic behavior of the samples. The reduction in optimum operating temperature and enhancement in response was observed on Pd-incorporation in nickel ferrite thin films. Faster response and recovery characteristic is observed Pd-incorporated nickel ferrite thin films. The long-term stability is evaluated over a period of six months. This feature may be regarded as a significant facet towards their practical application as gas sensors.

  7. Poisson Ratio of Epitaxial Germanium Films Grown on Silicon

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-01-01

    An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. We have used residual thermal strain to measure the Poisson ratio of Ge films grown on Si ⟨001⟩ substrates, using the sin2 ψ method and high-resolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared with the bulk value of 0.27. Our study indicates that use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film.

  8. Exchange coupling driven omnidirectional rotatable anisotropy in ferrite doped CoFe thin film

    PubMed Central

    Chai, Guozhi; Phuoc, Nguyen N.; Ong, C. K.

    2012-01-01

    Isotropic magnetic materials with high resonant frequencies are useful for applications in microwave devices. Undoped CoFe thin films, as common soft magnetic materials with high saturation magnetization, show isotropic characteristics but no high frequency response. Here, we use ferrite doped CoFe thin film to realize a resonant frequency higher than 4.5 GHz at all orientations. The exchange coupling between ferrimagnet and ferromagnet is assumed to play a key role on the omnidirectional rotatable anisotropy. PMID:23145323

  9. Faraday rotation of cobalt ferrite nanoparticle polymer composite films at cryogenic temperatures.

    PubMed

    Demir, Veysi; Gangopadhyay, Palash; Norwood, Robert A; Peyghambarian, Nasser

    2014-04-01

    This paper investigates the behavior of the Verdet constant for cobalt ferrite (CoFe₂O₄) nanoparticles polymer composite films at low temperatures using a 532 nm laser source. An experimental setup for Faraday rotation (FR) at low temperatures is introduced and FRs were measured at various temperatures. Verdet constants were deduced from the paramagnetic model for terbium gallium garnet glass where ~4× improvement was observed at 40° K for CoFe₂O₄ composite film. PMID:24787165

  10. Magneto-optical Kerr effect in NiZn ferrite films of variable thickness

    NASA Astrophysics Data System (ADS)

    Calle, C.; Calle, V. H.; Cuéllar, F.; Cortés, A.; Arias, D.; Lopera, W.; Prieto, P.; Guzmán, O.; Mendoza, G. A.

    2006-10-01

    NiZn ferrites films deposited by RF sputtering technique on (1 0 0)-Si substrates have been studied by the magneto-optical Kerr effect. The coercivity behavior as a function of the thickness indicates a spin reversal mainly governed by the single domain regime. The Jiles-Atherton Model was used to fit the experimental hysteresis loop. The k pinning parameter of the model increases by increasing film thicknesses

  11. Morphology in electrochemically grown conducting polymer films

    DOEpatents

    Rubinstein, Israel; Gottesfeld, Shimshon; Sabatani, Eyal

    1992-01-01

    A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventioonally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol.

  12. Morphology in electrochemically grown conducting polymer films

    DOEpatents

    Rubinstein, I.; Gottesfeld, S.; Sabatani, E.

    1992-04-28

    A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventionally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol. 2 figs.

  13. MBE grown high quality GaN films and devices

    NASA Astrophysics Data System (ADS)

    Kim, W.; Aktas, O.; Salvador, A.; Botchkarev, A.; Sverdlov, B.; Mohammad, S. N.; Morkoç, H.

    1997-02-01

    GaN films with much improved structural, transport, and optical properties have been prepared by molecular beam epitaxy using NH 3 as a nitrogen source. Films with a wide range of resistivity, including highly resistive ones, were grown with a chosen growth rate of 1.2 μm/h. The electron mobility in modulation doped structures is about 450 and 850 cm 2/Vs at 300 and 77 K, respectively, with an areal carrier concentration of about 10 13 cm -2. Low temperature luminescence shows A- and B-free-excitons as well as the excited state of the A- and B-excitons, the first known observation, attesting to the quality of the samples. These transition energies are consistent with the best MOCVD samples and represent a sizable reduction of the pandemic zincblende phase in MBE grown films. The high quality of films was demonstrated by the realization of high performance MODFETs and Schottky diodes.

  14. Silicon oxide films grown in microwave discharge

    NASA Technical Reports Server (NTRS)

    Kraitchman, J.

    1968-01-01

    Silicon oxide films thicker than 1000 angstrom are produced in the dense plasma of a microwave discharge. The oxide growth is characterized by a rate limiting diffusion process modified by sputtering effects produced by the discharge. Silicon is rapidly oxidized at temperatures estimated to be 500 degrees C or lower.

  15. Photoluminescence Spectra of thin Zno films grown by ALD technology

    NASA Astrophysics Data System (ADS)

    Akopyan, I. Kh.; Davydov, V. Yu.; Labzovskaya, M. E.; Lisachenko, A. A.; Mogunov, Ya. A.; Nazarov, D. V.; Novikov, B. V.; Romanychev, A. I.; Serov, A. Yu.; Smirnov, A. N.; Titov, V. V.; Filosofov, N. G.

    2015-09-01

    The photoluminescence of ZnO films grown by atomic layer deposition (ALD) on silicon substrates has been investigated. A new broad photoluminescence band has been revealed in the exciton region of the spectrum. The properties of the band in the spectra of the films with different crystallographic orientations of substrates have been studied in a wide temperature range at different excitation levels. A model describing the origin of the new band has been proposed.

  16. Thickness Dependence Magnetization in Laser Ablated Ni-Cu-Zn Ferrite Nanostructured Thin Films.

    PubMed

    Raghavender, A T; Hong, Nguyen Hoa; Lee, Kyu Joon; Jung, Myung-Hwa

    2016-01-01

    Ni₀.₅Cu₀.₃Zn₀.₂Fe₂O₄ thin films with thickness ranging from 25 nm to 500 nm were grown on Si substrate using pulsed laser deposition technique and their structural and magnetic properties were investigated. From the atomic force microscopy (AFM) analysis, it is observed that the film roughness (Ra) depends strongly on the thickness of the fabricated film. The magnetizations of the thin films were found to decrease when the film thickness increases. The thinner films showed a larger magnetization than the thick films. All the films showed a blocking temperature indicating their superparamagnetic behavior. PMID:27398528

  17. InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  18. InSb thin films grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Rajaram, P.

    2014-04-01

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl3 and 0.03M SbCl3, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm-1 corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  19. Effect of quenching on the magnetic properties of Mg-ferrite thin films

    NASA Astrophysics Data System (ADS)

    Roy Dakua, Himadri; Venkataramani, N.; Prasad, Shiva

    2016-05-01

    We have investigated the microstructural and magnetic properties of the post annealed slow cooled and quenched Mg-ferrite thin films. The microstructural properties of these films were studied through XRD, TEM and SEM. The magnetic properties were studied using VSM at 300K and 10K. The quenched film showed ˜1.66 times higher magnetization at room temperature (RT) compared to the bulk and the slow cooled film (4πMS of bulk˜1880 Gauss at RT) though the crystal phase, grain size and thickness of both the films were similar. The change in the cation distribution is the plausible origin of large magnetization observed in the quenched (rapid cooled) film.

  20. Deposition of nanostructured photocatalytic zinc ferrite films using solution precursor plasma spraying

    SciTech Connect

    Dom, Rekha; Sivakumar, G.; Hebalkar, Neha Y.; Joshi, Shrikant V.; Borse, Pramod H.

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Highly economic solution precursor route capable of producing films/coating even for mass scale production. Black-Right-Pointing-Pointer Pure spinel phase ZnFe{sub 2}O{sub 4} porous, immobilized films deposited in single step. Black-Right-Pointing-Pointer Parameter optimization yields access to nanostructuring in SPPS method. Black-Right-Pointing-Pointer The ecofriendly immobilized ferrite films were active under solar radiation. Black-Right-Pointing-Pointer Such magnetic system display advantage w.r.t. recyclability after photocatalyst extraction. -- Abstract: Deposition of pure spinel phase, photocatalytic zinc ferrite films on SS-304 substrates by solution precursor plasma spraying (SPPS) has been demonstrated for the first time. Deposition parameters such as precursor solution pH, concentration, film thickness, plasma power and gun-substrate distance were found to control physico-chemical properties of the film, with respect to their crystallinity, phase purity, and morphology. Alkaline precursor conditions (7 < pH {<=} 10) were found to favor oxide film formation. The nanostructured films produced under optimized conditions, with 500 mM solution at pH {approx} 8.0, yielded pure cubic phase ZnFe{sub 2}O{sub 4} film. Very high/low precursor concentrations yielded mixed phase, less adherent, and highly inhomogeneous thin films. Desired spinel phase was achieved in as-deposited condition under appropriately controlled spray conditions and exhibited a band gap of {approx}1.9 eV. The highly porous nature of the films favored its photocatalytic performance as indicated by methylene blue de-coloration under solar radiation. These immobilized films display good potential for visible light photocatalytic applications.

  1. Effect of hydrothermal heat treatment on magnetic properties of copper zinc ferrite rf sputtered films

    NASA Astrophysics Data System (ADS)

    Kaur, Jasmeet; Gadipelly, Thirupathi; Singh, R.

    2016-05-01

    The hydrothermal treatment to the nano-structured films can overcome the destruction of the films. The Cu-Zn Ferrite films were fabricated by RF-sputtering on quartz substrates. Subsequently, the as deposited films were heat treated using hydrothermal process. The X-ray diffraction pattern of the as-deposited and hydrothermal treated films indicate nano-crystalline cubic spinel structure. The amorphous nature of the films is removed after hydrothermal treatment with decreased crystallite size. The field emission scanning electron micrographs showed merged columnar growth for as deposited films, which changes to well define columns after hydrothermal heating. The homogeneous cluster distribution is observed in surface view of the hydrothermal treated films. Hydrothermal treated films show merging of in-plane and out of plane magnetization plots (M(H)) whereas the M(H) plots of as deposited films show angular dependence. The strong angular dependence is observed in the FMR spectra due to the presence of a uniaxial anisotropy in the films. The ferromagnetic interactions decrease in hydrothermal heated films due to the reduced shape anisotropy and crystallite size.

  2. Effect of annealing atmosphere on phase formation and electrical characteristics of bismuth ferrite thin films

    SciTech Connect

    Simoes, A.Z.; Riccardi, C.S.; Dos Santos, M.L.; Garcia, F. Gonzalez; Longo, E.; Varela, J.A.

    2009-08-05

    Bismuth ferrite thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates by a soft chemical method and spin-coating technique. The effect of annealing atmosphere (air, N{sub 2} and O{sub 2}) on the structure and electrical properties of the films are reported. X-ray diffraction analysis reveals that the film annealed in air atmosphere is a single-phase perovskite structure. The films annealed in air showed better crystallinity and the presence of a single BFO phase leading to lower leakage current density and superior ferroelectric hysteresis loops at room temperature. In this way, we reveal that BFO film crystallized in air atmosphere by the soft chemical method can be useful for practical applications, including nonvolatile digital memories, spintronics and data-storage media.

  3. Equilibrium State and Magnetic Permeability Tensor of the Epitaxial Ferrite Films

    NASA Astrophysics Data System (ADS)

    Bobkov, V. B.; Zavislyak, I. V.

    1997-12-01

    The analysis of the equilibrium state of an arbitrarily oriented epitaxial ferrite film with basic cubic symmetry has been carried out. The equilibrium orientation of the magnetization has been shown to coincide with the direction of the applied magnetic field for (n, n, m), (m, n, 0) and (112) films that are magnetized parallel to the surface along the axes 110, 100 and 111, respectively. Conditions of the stability of the equilibrium state have been found. For (100), (110) and (111) films a simple technique for determining the magnetic parameters of the films by the use of the spectra of magnetostatic waves has been proposed. For those films the magnetic permeability tensor has been obtained. Different algorithms have been proposed for processing the MSW spectra.

  4. Fluorination of epitaxial oxides: Creating ferrite and nickelate oxyfluoride films

    NASA Astrophysics Data System (ADS)

    May, Steven; Moon, Eun; Xie, Yujun; Keavney, David; Goebel, Justin; Laird, Eric; Li, Christopher

    2013-03-01

    In ABO3 perovskites, the physical properties are directly coupled to the nominal valence state of the B-site cation. In epitaxial thin films, the dominant strategy to control B-site valence is through the selection of a di- or trivalent cation on the A-site. However, this approach is limited, particularly when electron doping on the B-site is desired. Here we report a simple method for realizing oxyfluoride films, where the substitution of F for O is expected to reduce the B-site valence, providing a new means to tune electronic, optical and magnetic properties in thin films. Fluorination is achieved by spin coating an oxygen deficient film with poly(vinylidene fluoride). The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO3-δFδ and LaNiO3-δFδ (δ ? 0.5) films, as confirmed by x-ray photoemission spectroscopy and x-ray absorption spectroscopy. This work is supported by the U. S. Army Research Office under grant number W911NF-12-1-0132. Work at the Advanced Photon Source is supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences under contract DE-AC02-06CH11357.

  5. thin films grown with additional NaF layers

    NASA Astrophysics Data System (ADS)

    Kim, Gee Yeong; Kim, Juran; Jo, William; Son, Dae-Ho; Kim, Dae-Hwan; Kang, Jin-Kyu

    2014-10-01

    CZTS precursors [SLG/Mo (300 nm)/ZnS (460 nm)/SnS (480 nm)/Cu (240 nm)] were deposited by RF/DC sputtering, and then NaF layers (0, 15, and 30 nm) were grown by electron beam evaporation. The precursors were annealed in a furnace with Se metals at 590°C for 20 minutes. The final composition of the CZTSSe thin-films was of Cu/(Zn + Sn) ~ 0.88 and Zn/Sn ~ 1.05, with a metal S/Se ratio estimated at ~0.05. The CZTSSe thin-films have different NaF layer thicknesses in the range from 0 to 30 nm, achieving a ~3% conversion efficiency, and the CZTSSe thin-films contain ~3% of Na. Kelvin probe force microscopy was used to identify the local potential difference that varied according to the thickness of the NaF layer on the CZTSSe thin-films. The potential values at the grain boundaries were observed to increase as the NaF thickness increased. Moreover, the ratio of the positively charged GBs in the CZTSSe thin-films with an NaF layer was higher than that of pure CZTSSe thin-films. A positively charged potential was observed around the grain boundaries of the CZTSSe thin-films, which is a beneficial characteristic that can improve the performance of a device.

  6. Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films

    NASA Astrophysics Data System (ADS)

    Jing, Yang; De-Gang, Zhao; De-Sheng, Jiang; Ping, Chen; Zong-Shun, Liu; Jian-Jun, Zhu; Ling-Cong, Le; Xiao-Jing, Li; Xiao-Guang, He; Li-Qun, Zhang; Hui, Yang

    2016-02-01

    Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high- temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT- and LT-grown ones. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Natural Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

  7. Temperature dependence of FMR and magnetization in nanocrystalline zinc ferrite thin films

    NASA Astrophysics Data System (ADS)

    Sahu, B. N.; Doshi, Akash S.; Prabhu, R.; Venkataramani, N.; Prasad, Shiva; Krishnan, R.

    2016-05-01

    Single phase nano-crystalline zinc ferrite thin films were deposited by RF-magnetron sputtering on quartz substrate at room temperature (RT) in pure Argon environment and annealed (in air) at different temperatures. Temperature dependence of magnetization was studied on these films using both VSM and by observing FMR (in X band). Value of exchange stiffness constant (D) was obtained by fitting Bloch's law to the low temperature magnetization data. The value of D decreased monotonously with the annealing temperature (TA) of the samples. A film annealed at TA = 523 K, exhibited the highest magnetization value. The FMR line width of the films decreased with increase in measurement temperature. At RT (˜293 K), the lowest value of line width (ΔH) was 15 kA/m and 13 kA/m in parallel and perpendicular configuration respectively for the sample annealed at TA = 623 K.

  8. Characterization of graphene grown on bulk and thin film nickel.

    PubMed

    Lu, Chun-Chieh; Jin, Chuanhong; Lin, Yung-Chang; Huang, Chi-Ruei; Suenaga, Kazu; Chiu, Po-Wen

    2011-11-15

    We report on graphene films grown by atmospheric pressure chemical vapor deposition on bulk and thin film nickel. Carbon precipitation on the polycrystalline grains is controlled by the methane concentration and substrate cooling rate. It is found that graphene grows over multiple grains, with edges terminating along the grain boundaries and with dimensions directly correlated to the size of the underlying grains. This greatly restricts the resulting graphene size (<10 μm) in the thin film growth, whereas monolayer graphene with linear dimensions of hundreds of micrometers takes up the great majority of the surface overlayers on the bulk nickel (>50%). In addition, the number of layers can be better controlled in the bulk growth. Characterizations of the graphene sheets using transmission electron microscopy, Raman spectroscopy, and transport measurements in the field-effect configuration are also discussed. PMID:21967558

  9. Properties of AlN film grown on Si (111)

    NASA Astrophysics Data System (ADS)

    Dai, Yiquan; Li, Shuiming; Sun, Qian; Peng, Qing; Gui, Chengqun; Zhou, Yu; Liu, Sheng

    2016-02-01

    Stress and strain in an AlN film grown on Si (111) substrate have been evaluated by measuring Raman frequency shifts. Mechanical properties and phonon deformation potentials of AlN are evaluated by first principles calculations. The calculation model is verified by comparing the calculated Raman frequencies and frequencies detected from a bulk single crystal. Results show that the two sets of frequencies agree very well with each other. Thus, with the same verified model and parameters, elastic constants and phonon deformation potentials are calculated. Additionally, we successfully develop a numerical model to verify the calculation above and the model itself is also useful to predict properties of crystal films. Finally, the stress, strain, and piezoelectric properties are analyzed and compared for films on different substrates.

  10. Magnetic domain structure in nanocrystalline Ni-Zn-Co spinel ferrite thin films using off-axis electron holography

    SciTech Connect

    Zhang, D.; Ray, N. M.; Petuskey, W. T.; Smith, D. J.; McCartney, M. R.

    2014-08-28

    We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (∼90 °C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.

  11. Structure property relationships of carbonaceous films grown under ion enhancement

    SciTech Connect

    Weissmantel, C.; Ackermann, E.; Bewilogua, K.; Hecht, G.; Kupfer, H.; Rau, B.

    1986-11-01

    Based on our own results and in comparison with data published by other groups the structure property relationships of carbon and carbon/metal films prepared by sputtering and deposition of partially ionized species are discussed. Films grown by ion beam sputtering are dark brownish and amorphous with a small fraction of microcrystals. However, a transition to transparent and insulating layers can be effected by ion bombardment. C/Me coatings, where Me stands for Ti or Sn, were obtained by magnetron sputtering of composite targets. The films proved to be amorphous up to metal concentrations of more than 10 at. %, but metal and carbide crystals grow upon annealing. Measurements of the hardness, the electrical conductivity, and the contact behavior in dependence on the composition provided interesting information. For carbon films prepared by deposition of partially ionized benzene species it has been found that the properties depend characteristically on the ion energy; typical ''diamondlike'' i-C films are obtained by applying a bias voltage from 1--3 keV. The thermal stability of the amorphous coatings is discussed in conjunction with their electrical conductivity. Summarizing extensive structure investigations, a structure model based on tetrahedrally interlinked carbon rings is proposed. Composites of the type i-C/Me (Me: Al, Ti, Cr), which were prepared by simultaneous metal evaporation, exhibit a wide range of structure property relations.

  12. Growth of epitaxial films of iron oxide, nickel oxide, cobalt oxide, strontium hexagonal ferrite, and yttrium iron garnet by laser ablation (abstract)

    SciTech Connect

    Kennedy, R.J.

    1996-04-01

    Thin films of iron oxide, nickel oxide, cobalt oxide, strontium hexagonal ferrite, and yttrium iron garnet have been grown by laser ablation. With the exception of Co{sub 3}O{sub 4} deposited on LaAlO{sub 3}, the first three materials deposited on [100] LaAlO{sub 3}, SrTiO{sub 3}, and MgO result in high quality {ital c} axis [100] growth. Co{sub 3}O{sub 4} deposited on LaAlO{sub 3} produces highly oriented but random in-plane growth. Similar highly oriented but random in-plane growth occurs for all three materials deposited on glass. The same three materials deposited on cubic zirconia grow [111] oriented and twinned. Strontium hexagonal ferrite and yttrium iron garnet have been deposited on [111] large lattice constant garnet. Epitaxial [0001] films are obtained for the former while the latter gives [111]-oriented films. For yttrium iron garnet the closeness of lattice match to the substrate necessitates that the mosaicity (rocking curves) obtained from area maps be compared to the growth temperatures and pressures to determine the optimum growth conditions for epitaxiality. {copyright} {ital 1996 American Institute of Physics.}

  13. Tailoring the optical bandgap and magnetization of cobalt ferrite thin films through controlled zinc doping

    NASA Astrophysics Data System (ADS)

    Sharma, Deepanshu; Khare, Neeraj

    2016-08-01

    In this report, the tuning of the optical bandgap and saturation magnetization of cobalt ferrite (CFO) thin films through low doping of zinc (Zn) has been demonstrated. The Zn doped CFO thin films with doping concentrations (0 to 10%) have been synthesized by ultrasonic assisted chemical vapour deposition technique. The optical bandgap varies from 1.48 to 1.88 eV and saturation magnetization varies from 142 to 221 emu/cc with the increase in the doping concentration and this change in the optical and magnetic properties is attributed to the change in the relative population of the Co2+ at the tetrahedral and octahedral sites. Raman study confirms the decrease in the population of Co2+ at tetrahedral sites with controlled Zn doping in CFO thin films. A quantitative analysis has been presented to explain the observed variation in the optical bandgap and saturation magnetization.

  14. Investigation on two magnon scattering processes in pulsed laser deposited epitaxial nickel zinc ferrite thin film

    NASA Astrophysics Data System (ADS)

    Roy, Debangsu; Sakshath, S.; Singh, Geetanjali; Joshi, Rajeev; Bhat, S. V.; Kumar, P. S. Anil

    2015-04-01

    Ferromagnetic resonance (FMR) measurements are employed to evaluate the presence of the two magnon scattering contribution in the magnetic relaxation processes of the epitaxial nickel zinc ferrite thin films deposited using pulsed laser deposition (PLD) on the (0 0 1) MgAl2O4 substrate. Furthermore, the reciprocal space mapping reveals the presence of microstructural defects which acts as an origin for the two magnon scattering process in this thin film. The relevance of this scattering process is further discussed for understanding the higher FMR linewidth in the in-plane configuration compared to the out-of-plane configuration. FMR measurements also reveal the presence of competing uniaxial and cubic anisotropy in the studied films.

  15. Magnetoactive feature of in-situ polymerised polyaniline film developed on the surface of manganese-zinc ferrite

    NASA Astrophysics Data System (ADS)

    Babayan, V.; Kazantseva, N. E.; Sapurina, I.; Moučka, R.; Vilčáková, J.; Stejskal, J.

    2012-07-01

    A polyaniline film exhibits magnetoactive properties when deposited on the surface of multidomain particles of manganese-zinc ferrite during in-situ polymerisation of aniline. This is reflected in the increased coercivity and thermomagnetic stability of an in-situ prepared composite compared with bare ferrite and its mixed composite with polyaniline. In addition, the deposition of a polyaniline film results in a shift of the complex-permeability dispersion region towards ultrahigh frequency band. These changes in the magnetic properties of polyaniline-coated ferrite are attributed to the increased value of the inner demagnetisation factor, which results from stress-induced magnetic anisotropy due to the pinning of domain walls appearing on the surface of ferrite. This study is focused on the mechanism of pinning of domain walls and its influence on the magnetic properties of in-situ prepared composites in terms of the molecular mechanism of oxidative polymerisation of aniline. Ferrite stimulates the propagation of polyaniline chains, which start to grow on the domain walls on the ferrite surface. It leads to the pinning of domain walls and restricts their mobility in a magnetic field. The further increase in the coercivity and the resonance frequency of polyaniline-coated ferrite due to film shrinkage after deprotonation of polyaniline makes it obvious that polyaniline coating induces elastic stresses in a ferrite particle that stimulate the growth of the effective magnetic anisotropy. Stress-induced magnetic anisotropy contributes to the reorientation of the magnetisation vectors in domains with respect to the new directions of easy magnetisation, given by magnetoelastic stresses, which leads to complex changes in the magnetic properties of in-situ prepared composites.

  16. Cathodic arc grown niobium films for RF superconducting cavity applications

    NASA Astrophysics Data System (ADS)

    Catani, L.; Cianchi, A.; Lorkiewicz, J.; Tazzari, S.; Langner, J.; Strzyzewski, P.; Sadowski, M.; Andreone, A.; Cifariello, G.; Di Gennaro, E.; Lamura, G.; Russo, R.

    2006-07-01

    Experimental results on the characterization of the linear and non-linear microwave properties of niobium film produced by UHV cathodic arc deposition are presented. Surface impedance Zs as a function of RF field and intermodulation distortion (IMD) measurement have been carried out by using a dielectrically loaded resonant cavity operating at 7 GHz. The experimental data show that these samples have a lower level of intrinsic non-linearities at low temperature and low circulating power in comparison with Nb samples grown by sputtering. These results make UHV cathodic arc deposition a promising technique for the improvement of RF superconducting cavities for particle accelerators.

  17. Atomically flat nickel film grown on synthetic mica

    NASA Astrophysics Data System (ADS)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2016-07-01

    We have grown nickel heteroepitaxially on muscovite and synthetic mica in vacuo for use as substrates for scanning probe microscopy (SPM) and graphene formation. We have determined annealing conditions that could generate atomically flat surfaces (with rms surface roughness of less than 1 nm). Owing to accelerated degradation at temperatures above 600 °C, muscovite mica was unsuitable as a substrate at high growth temperatures. Thermally stable synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2], on the other hand, was found to be stable at 800 °C and successfully employed for the formation of atomically flat films.

  18. Experimental and Numerical Study on the Effect of ZDDP Films on Sticking During Hot Rolling of Ferritic Stainless Steel Strip

    NASA Astrophysics Data System (ADS)

    Hao, Liang; Jiang, Zhengyi; Wei, Dongbin; Gong, Dianyao; Cheng, Xiawei; Zhao, Jingwei; Luo, Suzhen; Jiang, Laizhu

    2016-08-01

    The aim of this study is to investigate the effect of zinc dialkyl dithio phosphate (ZDDP) films on sticking during hot rolling of a ferritic stainless steel strip. The surface characterization and crack propagation of the oxide scale are very important for understanding the mechanism of the sticking. The high-temperature oxidation of one typical ferritic stainless was conducted at 1373 K (1100 °C) for understanding its microstructure and surface morphology. Hot-rolling tests of a ferritic stainless steel strip show that no obvious cracks among the oxide scale were observed with the application of ZDDP. A finite element method model was constructed with taking into consideration different crack size ratios among the oxide scale, surface profile, and ZDDP films. The simulation results show that the width of the crack tends to be reduced with the introduction of ZDDP films, which is beneficial for improving sticking.

  19. Growth and crystallographic feature-dependent characterization of spinel zinc ferrite thin films by RF sputtering

    PubMed Central

    2013-01-01

    ZnFe2O4 (ZFO) thin films exhibiting varying crystallographic features ((222)-epitaxially, (400)-epitaxially, and randomly oriented films) were grown on various substrates by radio-frequency magnetron sputtering. The type of substrate used profoundly affected the surface topography of the resulting ZFO films. The surface of the ZFO (222) epilayer was dense and exhibited small rectangular surface grains; however, the ZFO (400) epilayer exhibited small grooves. The surface of the randomly oriented ZFO thin film exhibited distinct three-dimensional island-like grains that demonstrated considerable surface roughness. Magnetization-temperature curves revealed that the ZFO thin films exhibited a spin-glass transition temperature of approximately 40 K. The crystallographic orientation of the ZFO thin films strongly affected magnetic anisotropy. The ZFO (222) epitaxy exhibited the strongest magnetic anisotropy, whereas the randomly oriented ZFO thin film exhibited no clear magnetic anisotropy. PMID:24354428

  20. Persistent conductive footprints of 109° domain walls in bismuth ferrite films

    SciTech Connect

    Stolichnov, I.; Iwanowska, M.; Colla, E.; Setter, N.; Ziegler, B.; Gaponenko, I.; Paruch, P.; Huijben, M.; Rijnders, G.

    2014-03-31

    Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109° domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall “footprints” is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization.

  1. Enhancement of rotatable anisotropy in ferrite doped FeNi thin film with oblique sputtering

    NASA Astrophysics Data System (ADS)

    Zhou, Cai; Jiang, Changjun; Zhao, Zhong

    2015-07-01

    Rotatable anisotropy of stripe domain (SD) was investigated in a ferrite doped FeNi thin film with different oblique angles. Rotation of SD under an in-plane magnetic field was observed by magnetic force microscopy, suggesting the existence of rotatable anisotropy. A rotatable anisotropy field Hrot was derived from the fitting curves of the in-plane resonance field versus the angle between the orientation of easy axis and applied field. As the oblique angle increases, an increase of Hrot from 305 Oe to 468 Oe was observed and the perpendicular anisotropy increased as well, indicating a correlation between rotatable anisotropy and perpendicular anisotropy.

  2. Cation Engineering of Cu-ferrite Films Deposited by Alternating Target Laser Ablation Deposition

    SciTech Connect

    Yang,A.; Chen, Z.; Islam, S.; Vittoria, C.; Harris, V.

    2008-01-01

    Epitaxial copper ferrite thin films were deposited on MgO substrates by the alternating target laser ablation deposition method. A series of films was studied to explore the impact of oxygen operating pressure, substrate temperature, and the ratio of laser shots incident on each target upon the magnetic, structural, and atomic structural properties. The highest saturation magnetization, 2800?G, was achieved at a 90?mTorr oxygen pressure and at 650? C for the substrate temperature. This value is 65% higher than the room temperature magnetization for bulk equilibrium samples. The inversion parameter was measured by extended x-ray absorption fine structure analysis. The sample having the highest saturation magnetization had a corresponding inversion parameter (percentage of Cu ion octahedral site occupancy) of 51.5% compared with the bulk value of 85%.

  3. Electron theory of perpendicular magnetic anisotropy of Co-ferrite thin films

    SciTech Connect

    Inoue, Jun-ichiro; Yanagihara, Hideto; Kita, Eiji; Niizeki, Tomohiko; AIMR, Tohoku University, Sendai 980-8577 ; Itoh, Hiroyoshi

    2014-02-15

    We develop an electron theory for the t{sub 2g} electrons of Co{sup 2+} ions to clarify the perpendicular magnetic anisotropy (PMA) mechanism of Co-ferrite thin films by considering the spin-orbit interaction (SOI) and crystal-field (CF) potentials induced by the local symmetry around the Co ions and the global tetragonal symmetry of the film. Uniaxial and in-plane MA constants K{sub u} and K{sub 1} at 0 K, respectively, are calculated for various values of SOI and CF. We show that reasonable parameter values explain the observed PMA and that the orbital moment for the in-plane magnetization reduces to nearly half of that of the out-of-plane magnetization.

  4. Bismuth ferrite based thin films, nanofibers, and field effect transistor devices

    NASA Astrophysics Data System (ADS)

    Rivera-Beltran, Rut

    In this research an attempt has been made to explore bismuth ferrite thin films with low leakage current and nanofibers with high photoconductivity. Thin films were deposited with pulsed laser deposition (PLD) method. An attempt has been made to develop thin films under different deposition parameters with following target compositions: i) 0.6BiFeO3-0.4(Bi0.5 K0.5)TiO3 (BFO-BKT) and ii) bi-layered 0.88Bi 0.5Na0.5TiO3-0.08Bi0.5K0.5TiO 3-0.04BaTiO3/BiFeO3 (BNT-BKT-BT/BFO). BFO-BKT thin film shows suppressed leakage current by about four orders of magnitude which in turn improve the ferroelectric and dielectric properties of the films. The optimum remnant polarization is 19 muC.cm-2 at the oxygen partial pressure of 300 mtorr. The BNT-BKT-BT/BFO bi-layered thin films exhibited ferroelectric behavior as: Pr = 22.0 muC.cm-2, Ec = 100 kV.cm-1 and epsilonr = 140. The leakage current of bi-layered thin films have been reduced two orders of magnitude compare to un-doped bismuth ferrite. Bismuth ferrite nanofibers were developed by electrospinning technique and its electronic properties such as photoconductivity and field effect transistor performance were investigated extensively. Nanofibers were deposited by electrospinning of sol-gel solution on SiO2/Si substrate at driving voltage of 10 kV followed by heat treatment at 550 °C for 2 hours. The composition analysis through energy dispersive detector and electron energy loss spectroscopy revealed the heterogeneous nature of the composition with Bi rich and Fe deficient regions. X-ray photoelectron spectroscopy results confirmed the combination of Fe3+ and Fe2+ valence state in the fibers. The photoresponse result is almost hundred times higher for a fiber of 40 nm diameter compared to a fiber with 100 nm diameter. This effect is described by a size dependent surface recombination mechanism. A single and multiple BFO nanofibers field effect transistors devices were fabricated and characterized. Bismuth ferrite FET behaves

  5. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m‑1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  6. The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

    NASA Astrophysics Data System (ADS)

    Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

    2016-04-01

    Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

  7. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

    DOEpatents

    Li, Qiming; Wang, George T

    2015-01-13

    A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

  8. Exchange bias in zinc ferrite-FeNiMoB based metallic glass composite thin films

    SciTech Connect

    R, Lisha; P, Geetha; B, Aravind P.; Anantharaman, M. R.; T, Hysen; Ojha, S.; Avasthi, D. K.; Ramanujan, R. V.

    2015-06-24

    The Exchange bias phenomenon and methods to manipulate the bias field in a controlled manner are thrust areas in magnetism due to its sophisticated theoretical concepts as well as advanced technological utility in the field of spintronics. The Exchange bias effect is observed as a result of ferromagnetic-antiferromagnetic (FM-AFM) exchange interaction, usually observed as a loop shift on field cooling below the Neel temperature of AFM. In the present study, we have chosen zinc ferrite which is a well known antiferromagnet, and FeNiMoB based metallic glass as the ferromagnet. The films were prepared by RF sputtering technique. The thickness and composition was obtained by RBS. The magnetic studies using SQUID VSM indicate exchange bias effect in the system. The effect of thermal annealing on exchange bias effect was studied. The observed exchange bias in the zinc ferrite-FeNiMoB system is not due to FM-AFM coupling but due to spin glass-ferromagnetic interaction.

  9. Exchange bias in zinc ferrite-FeNiMoB based metallic glass composite thin films

    NASA Astrophysics Data System (ADS)

    R, Lisha; T, Hysen; P, Geetha; B, Aravind P.; Ojha, S.; Avasthi, D. K.; Ramanujan, R. V.; Anantharaman, M. R.

    2015-06-01

    The Exchange bias phenomenon and methods to manipulate the bias field in a controlled manner are thrust areas in magnetism due to its sophisticated theoretical concepts as well as advanced technological utility in the field of spintronics. The Exchange bias effect is observed as a result of ferromagnetic-antiferromagnetic (FM-AFM) exchange interaction, usually observed as a loop shift on field cooling below the Neel temperature of AFM. In the present study, we have chosen zinc ferrite which is a well known antiferromagnet, and FeNiMoB based metallic glass as the ferromagnet. The films were prepared by RF sputtering technique. The thickness and composition was obtained by RBS. The magnetic studies using SQUID VSM indicate exchange bias effect in the system. The effect of thermal annealing on exchange bias effect was studied. The observed exchange bias in the zinc ferrite-FeNiMoB system is not due to FM-AFM coupling but due to spin glass-ferromagnetic interaction.

  10. The magnetic and magneto-optical properties of Co, Cr, Mn, and Ni substituted barium ferrite films

    NASA Astrophysics Data System (ADS)

    Carey, R.; Gago-Sandoval, P. A.; Newman, D. M.; Thomas, B. W. J.

    1994-05-01

    Using rapid thermal processing (RTP) we recently demonstrated the production of high quality well ordered barium ferrite films in times much shorter than those required by a conventional annealing process. Influence over the magnetic and structural properties developed in annealed samples was also achieved by variation of the RTP heating profile (R. Carey, P. A. Gago-Sandoval, D. M. Newman, and B. W. J. Thomas, presented at Intermag-93, Stockholm, April 13-16, 1993). It is known that the magneto-optic properties of barium ferrite can be enhanced by selective substitution of some of the Fe by Co2+ and Ti4+ albeit at the expense of reducing the magnetic anisotropy. A multitarget scanning cosputtering process has been used in conjunction with rapid thermal processing to produce a series of barium ferrite films in which Co, Cr, Mn, Ni are selectively introduced to substitute for between 5 and 20 at. % of the Fe. A corresponding percentage of Ti is also added to maintain charge compensation. The magnetic and magneto-optic properties of these films are presented and discussed with reference to their composition and treatment respect to the properties of barium ferrite.

  11. Spin-spray deposited NiZn-Ferrite films exhibiting μr' > 50 at GHz range

    NASA Astrophysics Data System (ADS)

    Obi, Ogheneyunume; Liu, Ming; Lou, Jing; Stoute, Stephen; Xing, Xing; Sun, Nian X.; Warzywoda, Juliusz; Sacco, Albert; Oates, Daniel E.; Dionne, Gerald F.

    2011-04-01

    Ni0.27ZnxFe2.73-xO4 (with x = 0.03-0.1) thin films with high real permeability μr' in the GHz range were fabricated by the spin spray process onto glass substrates in the presence of an external magnetic field of 360 Oe. These films exhibit high permeabilities that exceeded the Snoek limit for bulk NiZn-ferrite films and those previously reported for spin spray deposited ferrites. The NiZn-ferrite film with x = 0.06 is low in magnetic losses, having tanδm (μr″/μr') ˜ 0.027 from 1 to 1.5 GHz, and a high ferromagnetic resonance (FMR) frequency of 2.7 GHz, while the x = 0.1 film exhibited a high μr' of ˜50 and μr″ > 50 at 1 GHz. These properties are ideal for microwave applications such as antennas, inductors and electromagnetic interference (EMI) suppression in the GHz range.

  12. Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation

    NASA Astrophysics Data System (ADS)

    Thi Trinh, Cham; Nakagawa, Yoshihiko; Hara, Kosuke O.; Takabe, Ryota; Suemasu, Takashi; Usami, Noritaka

    2016-07-01

    We have succeeded in the observation of high photoresponsivity of orthorhombic BaSi2 film grown on crystalline Si by a vacuum evaporation method, raising the prospect of its promising application in high-efficiency thin-film solar cells. Photocurrent was observed at photon energies larger than 1.28 eV, which corresponds to the band gap of evaporated BaSi2 film, indicating that the photoresponsivity originates from the BaSi2 film. The effect of the substrate temperature on the film’s properties was also investigated. The films grown at a substrate temperature larger than 500 °C are single-phase polycrystalline BaSi2 films, while those grown at a substrate temperature of 400 °C is a mixture of phases. We confirmed that undoped evaporated BaSi2 films are an n-type material with high carrier concentration. High carrier lifetime of 4.8 and 2.7 μs can be found for the films grown at 500 °C and 400 °C, respectively. BaSi2 film grown at a substrate temperature of 500 °C, which is crack-free and single-phase, shows the best photoresponsivity. The maximum value of photocurrent was obtained at photon energy of 1.9 eV, corresponding to an external quantum efficiency of 22% under reverse applied voltage of 2 V.

  13. Direct evidence for the spin cycloid in strained nanoscale bismuth ferrite thin films.

    PubMed

    Bertinshaw, Joel; Maran, Ronald; Callori, Sara J; Ramesh, Vidya; Cheung, Jeffery; Danilkin, Sergey A; Lee, Wai Tung; Hu, Songbai; Seidel, Jan; Valanoor, Nagarajan; Ulrich, Clemens

    2016-01-01

    Magnonic devices that utilize electric control of spin waves mediated by complex spin textures are an emerging direction in spintronics research. Room-temperature multiferroic materials, such as bismuth ferrite (BiFeO3), would be ideal candidates for this purpose. To realize magnonic devices, a robust long-range spin cycloid with well-known direction is desired, since it is a prerequisite for the magnetoelectric coupling. Despite extensive investigation, the stabilization of a large-scale uniform spin cycloid in nanoscale (100 nm) thin BiFeO3 films has not been accomplished. Here, we demonstrate cycloidal spin order in 100 nm BiFeO3 thin films through the careful choice of crystallographic orientation, and control of the electrostatic and strain boundary conditions. Neutron diffraction, in conjunction with X-ray diffraction, reveals an incommensurate spin cycloid with a unique [11] propagation direction. While this direction is different from bulk BiFeO3, the cycloid length and Néel temperature remain equivalent to bulk at room temperature. PMID:27585637

  14. Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Bharathan, Jayesh; Narayan, Jagdish; Rozgonyi, George; Bulman, Gary E.

    2013-10-01

    We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step technique by reduced-pressure chemical vapor deposition, where the first step promotes two-dimensional growth at a lower substrate temperature. We observed a decrease in defect density with increasing film thickness. Ge films with thickness of 3.5 μm exhibited threading dislocation densities of 5 × 106 cm-2, which yielded devices with dark current density of 5 mA cm-2 (1 V reverse bias). We also noted the presence of stacking faults in the form of lines in the films and establish that this is an important defect for Ge films grown by this deposition technique.

  15. Crystal structure of thin oxide films grown on Zr-Nb alloys studied by RHEED

    NASA Astrophysics Data System (ADS)

    Khatamian, D.; Lalonde, S. D.

    1997-05-01

    The highly surface sensitive reflection high energy electron diffraction (RHEED) technique was used to determine thecrystal structure of oxide films grown on Zr-Nb alloys in air up to 673 K. The results show that the oxide films grown on Zr-2.5 wt% Nb(α-Zr + β-Zr) have a mixture of nearly-cubic-tetragona and monoclinic structures for films of 200 nm thick or less and that the outer layers of films thicker than 800 nm only have the monoclinic crystal structure. However, oxide films grown on Zr-20 wt% Nb (β-Zr) have a stabilized nearly-cubic-tetragonal structure for all film thicknesses, studied here, up to 2100 nm.

  16. Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

    SciTech Connect

    Nag, Joyeeta; Payzant, E Andrew; More, Karren Leslie; HaglundJr., Richard F

    2011-01-01

    Stoichiometric vanadium dioxide in bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by a structural phase transformation, induced by temperature, light, electric fields, doping or strain. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving (1) room temperature growth followed by annealing and (2) direct high temperature growth. Strain at the film-substrate interface due to growth at different temperatures leads to interesting differences in morphologies and phase transition characteristics. Comparison of the morphologies and switching characteristics of the two films shows that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance, consistent with the behavior of epitaxially grown semiconductors.

  17. Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin films

    SciTech Connect

    Krishnan, P.S. Sanakara R.; Aguiar, Jeffery A.; Ramasse, Q. M.; Kepaptsoglou, D. M.; Liang, W. I.; Chu, Y. H.; Browning, Nigel D.; Munroe, Paul R.; Nagarajan, Valanoor

    2015-01-01

    Strain engineering of epitaxial ferroelectrics has emerged as a powerful method to tailor the electromechanical response of these materials, although the effect of strain at the atomic scale and the interplay between lattice displacements and electronic structure changes are not yet fully understood. Here, using a combination of scanning transmission electron microscopy (STEM) and density functional theory (DFT), we systematically probe the role of epitaxial strain in mixed phase bismuth ferrite thin films. Electron energy loss O K and Fe L2,3 edge spectra acquired across the rhombohedral (R)-tetragonal (T) phase boundary reveal progressive, and systematic changes, in electronic structure going from one phase to the other. The comparison of the acquired spectra, with theoretical simulations using DFT, suggests a breakage in the structural symmetry across the boundary due to the simultaneous presence of increasing epitaxial strain and off- axial symmetry in the T phase. This implies that the imposed epitaxial strain plays a significant role in not only changing the crystal-field geometry, but also the bonding environment surrounding the central iron cation at the interface thus providing new insights and a possible link to understand how the imposed strain could perturb magnetic ordering in the T phase BFO.

  18. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  19. Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Street, Kenneth W.; Lukco, Dorothy; Cytron, Sheldon J.

    2005-01-01

    Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

  20. Significance of microstructure for a MOCVD-grown YSZ thin film gas sensor

    SciTech Connect

    Vetrone, J.; Foster, C.; Bai, G.

    1996-11-01

    The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

  1. Magnetic and structural properties of ultrafine Ni-Zn-Cu ferrite grown by a sol-gel method

    NASA Astrophysics Data System (ADS)

    Kim, Woo Chul; Park, Seung Iel; Kim, Sam Jin; Lee, Seung Wha; Kim, Chul Sung

    2000-05-01

    Ultrafine Ni0.65Zn0.35Cu0.2Fe1.8O4 particles were fabricated by a sol-gel method. The magnetic and structural properties of the powders were investigated with x-ray diffraction, vibrating sample magnetometer, and Mössbauer spectroscopy. Ni-Zn-Cu ferrite powders that were fired at and above 823 K have only a single phase spinel structure and behave ferrimagnetically. Powders annealed at 523, 623, and 723 K have a typical spinel structure and are simultaneously paramagnetic and ferrimagnetic in nature. The magnetic behavior of Ni-Zn-Cu ferrite powders fired at and above 623 K showed that an increase of the annealing temperature yielded a decrease of the coercivity and an increase of the saturation magnetization. The maximum coercivity and the saturation magnetization of Ni-Zn-Cu ferrite powders were Hc=96 Oe and Ms=68 emu/g. Mössbauer spectra of powder annealed at 1223 K were taken at various temperatures ranging from 12 to 675 K. As the temperature increased toward TN, a systematic line broadening effect in the Mössbauer spectra was observed and was interpreted as originating from the different temperature dependencies of the magnetic hyperfine fields at various iron sites. The isomer shifts indicated that the iron ions were ferric at the tetrahedral [A] and the octahedral site [B]. The Néel temperature was determined to be TN=675±2 K.

  2. Characterization of Nanoporous WO3 Films Grown via Ballistic Deposition

    SciTech Connect

    Smid, Bretislav; Li, Zhenjun; Dohnalkova, Alice; Arey, Bruce W.; Smith, R. Scott; Matolin, Vladimir; Kay, Bruce D.; Dohnalek, Zdenek

    2012-05-17

    We report on the preparation and characterization of high surface area, supported nanoporous tungsten oxide films prepared under different conditions on polished polycrystalline Ta and Pt(111) substrates via direct sublimation of monodispersed gas phase of cyclic (WO3)3 clusters. Scanning Electron Microscopy and Transmission Electron Microscopy were used to investigate the film morphology on a nanometer scale. The films consist of arrays of separated filaments that are amorphous. The chemical composition and the thermal stability of the films were investigated by means of X-ray Photoelectron Spectroscopy. The surface area and the distribution of binding sites on the films are measured as functions of growth temperature, deposition angle, and annealing conditions using temperature programmed desorption of Kr. Films deposited at 20 K and at an incident angle of 65{sup o} from substrate normal display the greatest specific surface area of {approx}560 m2/g.

  3. Multilayer permalloy films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rook, K.; Zeltser, A. M.; Artman, J. O.; Laughlin, D. E.; Kryder, M. H.

    1991-04-01

    The magnetic properties of single-layer and multilayer 111-line textured Cu and Permalloy films, deposited by MBE on 111-plane Si substrates, have been measured by both ferromagnetic resonance and M-H loop tracer; microstructural characterizations were conducted by TEM, XRD, and reflection high-energy electron diffraction. The single-layer films had lower easy-axis coercivity H(ce) and a lower in-plane anisotropy field than sputter-deposited Permalloy films of similar thickness. The five-layer, Cu-interlayer separated Permalloy structures, having a magnetic thickness in excess of 100 nm, exhibited lower H(ce) than equivalent single-layer films.

  4. Single-crystal semiconductor films grown on foreign substrates

    NASA Technical Reports Server (NTRS)

    Vohl, P.

    1966-01-01

    Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.

  5. Photoresponse in thin films of WO{sub 3} grown by pulsed laser deposition

    SciTech Connect

    Roy Moulik, Samik; Samanta, Sudeshna; Ghosh, Barnali

    2014-06-09

    We report, the photoresponse behaviour of Tungsten trioxide (WO{sub 3}) films of different surface morphology, grown by using pulsed laser deposition (PLD). The Growth parameters for PLD were changed for two substrates SiO{sub 2}/Si (SO) and SrTiO{sub 3} (STO), such a way which, result nanocrystalline film on SO and needle like structured film on STO. The photoresponse is greatly modified in these two films because of two different surface morphologies. The nanocrystalline film (film on SO) shows distinct photocurrent (PC) ON/OFF states when light was turned on/off, the enhancement of PC is ∼27%. Whereas, the film with needle like structure (film on STO) exhibits significantly enhanced persistent photocurrent even in light off condition, in this case, the enhancement of PC ∼ 50% at room temperature at lowest wavelength (λ = 360 nm) at a nominal bias voltage of 0.1 V.

  6. Surface phonons of NiO(001) ultrathin films grown pseudomorphically on Ag(001)

    NASA Astrophysics Data System (ADS)

    Kostov, K. L.; Polzin, S.; Schumann, F. O.; Widdra, W.

    2016-01-01

    For an ultrathin NiO(001) film of 4 monolayer (ML) thickness grown on Ag(001), the vibrational properties have been determined by high-resolution electron energy loss spectroscopy (HREELS). For the well-ordered pseudomorphically grown film, nine phonon modes have been identified and their dispersions have been revealed along the ΓbarΧbar high-symmetry direction. The comparison with phonon data for a 25 ML thick NiO(001) film shows that the NiO(001) phonon properties are already fully developed at 4 ML. Significant differences are found for the surface-localized phonon S6 which has an increased dispersion for the ultrathin film. The dipole-active Fuchs-Kliewer phonon-polariton exhibits a narrower lineshape than the mode found for a single-crystal surface, which might hint to a reduced antiferromagnetic coupling in the ultrathin film.

  7. Structural and magnetic properties of zinc ferrite thin films irradiated by 90 keV neon ions

    NASA Astrophysics Data System (ADS)

    Gafton, E. V.; Bulai, G.; Caltun, O. F.; Cervera, S.; Macé, S.; Trassinelli, M.; Steydli, S.; Vernhet, D.

    2016-08-01

    The effects of 90 keV neon beam irradiation on the structure and magnetic properties of zinc ferrite thin films have been investigated through several methods, namely, X-ray diffraction technique, Vibrating Sample and SQUID magnetometers. Beforehand, the pristine have also been characterized using profilometry and microscopy techniques. In particular single-phase formation of the thin films deposited on monocrystalline Si (111) substrate by pulsed laser deposition technique was confirmed. Crystal lattice, coercivity, saturation magnetization have been studied for the first time, as a function of ion penetration depth and irradiation fluence. The chemical composition and the crystallinity of the films are not affected with the ion impact acting as a mechanical stress relief. On the contrary, both magnetization and coercivity are sensitive to Neq+ ion irradiation and exhibit different behaviours depending on the ion fluence range.

  8. Characterization of perovskite film prepared by pulsed laser deposition on ferritic stainless steel using microscopic and optical methods

    NASA Astrophysics Data System (ADS)

    Durda, E.; Jaglarz, J.; Kąc, S.; Przybylski, K.; El Kouari, Y.

    2016-06-01

    The perovskite La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF48) film was deposited on Crofer 22 APU ferritic stainless steel by pulsed laser deposition (PLD). Morphological studies of the sample were performed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Information about film thickness and surface topography of the film and the steel substrate were obtained using following optical methods: spectroscopic ellipsometry (SE), bidirectional reflection distribution function (BRDF) and total integrated reflectometry (TIS). In particular, the BRDF study, being complementary to atomic force microscopy, yielded information about surface topography. Using the previously mentioned methods, the following statistic surface parameters were determined: root-mean square (rms) roughness and autocorrelation length by determining the power spectral density (PSD) function of surface irregularities.

  9. Thickness-dependent optical properties in compressively strained BiFeO{sub 3}/LaAlO{sub 3} films grown by pulsed laser deposition

    SciTech Connect

    Duan, Zhihua; Jiang, Kai; Wu, Jiada; Sun, Jian; Hu, Zhigao; Chu, Junhao

    2014-03-01

    Graphical abstract: - Highlights: • BFO with various thicknesses was grown on LAO substrates by pulsed laser deposition. • The structure and compressive strains were clarified via Raman scattering. • The charge transfer excitation was blue shifted with increasing compressive strain. • The compressive strain affects the distortion of Fe{sup 3+} local environment and O 2p states. - Abstract: Bismuth ferrite (BiFeO{sub 3}) films with various thicknesses were epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The X-ray diffraction and Raman scattering spectra reveal that the films were highly (11{sup ¯}1) oriented with the single phase. With increasing the thickness, the compressive strain decreases and the strain ratios between the film and bulk crystal are evaluated to be 1.75, 1.57, and 1. Moreover, the compressive strain induces band gap shrinkage from 2.7 to 2.65 eV, while the charge transfer transition energy increases from 3.5 to 4.1 eV. It could be due to the shift of O 2p states and the variation of local Fe{sup 3+} crystal field.

  10. Electrochromic behavior in CVD grown tungsten oxide films

    NASA Astrophysics Data System (ADS)

    Gogova, D.; Iossifova, A.; Ivanova, T.; Dimitrova, Zl; Gesheva, K.

    1999-03-01

    Solid state electrochemical devices (ECDs) for smart windows, large area displays and automobile rearview mirrors are of considerable technological and commercial interest. In this paper, we studied the electrochromic properties of amorphous and polycrystalline CVD carbonyl tungsten oxide films and the possibility for sol-gel thin TiO 2 film to play the role of passive electrode in an electrochromic window with solid polymer electrolyte.

  11. Influence of oxygen annealing conditions on the electronic structure, dielectric function, and charge conduction of gallium-ferrite thin films

    NASA Astrophysics Data System (ADS)

    Shin, Ran Hee; Oh, Seol Hee; Lee, Ji Hye; Jo, William; Jang, Seunghun; Han, Moonsup; Choi, Sukgeun

    2013-12-01

    Gallium-ferrite thin films were studied to investigate the effects of the oxygen annealing conditions on the electrical properties. Ga0.8Fe1.2O3- δ thin films were prepared by using a sol-gel method under different oxygen partial pressures. The structural properties of the films were studied by using X-ray diffraction. X-ray photoemission spectra of the core-levels of Ga, Fe, and O in the films were examined. The dielectric functions of the films were measured at energies from 0.73 to 6.45 eV by using spectroscopic ellipsometry. The Fe valence was changed by the oxygen vacancies, which are dominantly responsible for the dielectric function and the charge conduction. Remarkably, the leakage current of the films annealed under intermediate oxygen atmospheric conditions showed the lowest values. In the film, the oxygen vacancies, were indirectly estimated by using the ratio of Fe2+ to Fe3+, are important to reduce the leakage current, which can be explained by using a space-charge-limited model with shallow traps.

  12. Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

    SciTech Connect

    Pathan, H.M.; Lokhande, C.D. . E-mail: l_chandrakant@yahoo.com; Kulkarni, S.S.; Amalnerkar, D.P.; Seth, T.; Han, Sung-Hwan . E-mail: shhan@hanyang.ac.kr

    2005-06-15

    Indium sulphide (In{sub 2}S{sub 3}) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In{sub 2}S{sub 3} thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study.

  13. Zinc oxide films chemically grown onto rigid and flexible substrates for TFT applications

    NASA Astrophysics Data System (ADS)

    Suchea, M.; Kornilios, N.; Koudoumas, E.

    2010-10-01

    This contribution presents some preliminary results regarding the use of a chemical route for the growth of good quality ZnO thin films that can be used for the fabrication of thin film transistors (TFTs). The films were grown at rather low temperature (60 °C) on glass and PET substrates using non-aqueous (zinc acetate dihydrate in methanol) precursor solution and their surface morphology, crystalline structure, optical transmittance and electrical characteristics were studied. The study indicated that good quality films with desirable ZnO structure onto rigid and flexible substrates can be obtained, using a simple, cheap, low temperature chemical growth method.

  14. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  15. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    SciTech Connect

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited under higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.

  16. Optical and mechanical properties of nanocrystalline ZrC thin films grown by pulsed laser deposition.

    DOE PAGESBeta

    Craciun, D.; Socol, G.; Lambers, E.; McCumiskey, E. J.; Taylor, C. R.; Martin, C.; Argibay, Nicolas; Craciun, V.; Tanner, D. B.

    2015-01-17

    Thin ZrC films (<500 nm) were grown on (100) Si substrates at a substrate temperature of 500 °C by the pulsed laser deposition (PLD) technique using a KrF excimer laser under different CH4 pressures. Glancing incidence X-ray diffraction showed that films were nanocrystalline, while X-ray reflectivity studies found out films were very dense and exhibited a smooth surface morphology. Optical spectroscopy data shows that the films have high reflectivity (>90%) in the infrared region, characteristic of metallic behavior. Nanoindentation results indicated that films deposited under lower CH4 pressures exhibited slightly higher nanohardness and Young modulus values than films deposited undermore » higher pressures. As a result, tribological characterization revealed that these films exhibited relatively high wear resistance and steady-state friction coefficients on the order of μ = 0.4.« less

  17. Exchange Bias and Unusual Initial Magnetization in Nanocrystalline Spinel Ferrite Thin Films

    NASA Astrophysics Data System (ADS)

    Alaan, Urusa; Gollapudi, Sreenivasulu; Yu, Kin Man; Shafer, Padraic; Arenholz, Elke; Srinivasan, Gopalan; Suzuki, Yuri

    2015-03-01

    We report on unconventional magnetic behavior in nanocrystalline (Mn,Zn,Fe)3O4 (MZFO) thin films grown at room temperature. Structural studies show no secondary phases, yet these films are exchange biased, with magnetic hysteresis loops shifted by as much as ~ 200 Oe at 10 K after field-cooling. The samples can be ``trained'' so that successive magnetization loops exhibit reduced exchange bias. Shifts of the hysteresis loops exist even after cooling in zero field, indicating that the MZFO is not externally biased. We attribute the exchange bias to disordered, grain-boundary-like regions that bias more ordered MZFO. Annealing experiments that improved sample crystallinity decreased the exchange bias. Higher annealing temperatures resulted in reduced coercivities, higher magnetizations, and even the elimination of the exchange bias. Annealing also removed an unusual crossover of the initial magnetization curve outside of the saturated magnetization loop. This behavior has been seen in so-called ``mictomagnetic'' alloys. Using x-ray magnetic circular dichroism measurements, we have shown that cation disorder was reduced with annealing, and correlated the atypical initial magnetization with the degree of disorder. We gratefully acknowledge the National Science Foundation for funding this research.

  18. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  19. Friction and wear performance of diamondlike carbon films grown in various source gas plasmas

    SciTech Connect

    Erdemir, A.; Nilufer, I. B.; Eryilmaz, O. L.; Beschliesser, M.; Fenske, G. R.

    2000-01-18

    In this study, the authors investigated the effects of various source gases (methane, ethane, ethylene, and acetylene) on the friction and wear performance of diamondlike carbon (DLC) films prepared in a plasma enhanced chemical vapor deposition (PECVD) system. Films were deposited on AISI H13 steel substrates and tested in a pin-on-disk machine against DLC-coated M50 balls in dry nitrogen. They found a close correlation between friction coefficient and source gas composition. Specifically, films grown in source gases with higher hydrogen-to-carbon ratios exhibited lower friction coefficients and higher wear resistance than films grown in source gases with lower hydrogen-to-carbon (H/C) ratios. The lowest friction coefficient (0.014) was achieved with a film derived from methane with an WC ratio of 4, whereas the coefficient of films derived from acetylene (H/C = 1) was of 0.15. Similar correlations were observed for wear rates. Specifically, films derived from gases with lower H/C values were worn out and the substrate material was exposed, whereas films from methane and ethane remained intact and wore at rates that were nearly two orders of magnitude lower than films obtained from acetylene.

  20. Enhanced ionic conduction at the film/substrate interface in LiI thin films grown on sapphire(0001)

    SciTech Connect

    Lubben, D.; Modine, F.A.

    1993-12-01

    The ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in-situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room temperature by sublimation in an ultra-high-vacuum system. The conductivity of the LiI parallel to the film/substrate interface was determined from frequency-dependent impedance measurements as a function of film thickness using Au interdigital electrodes deposited on the sapphire surface. The measurements show a conduction of {approximately}5 times the bulk value at the interface which gradually decreases as the film thickness is increased beyond 100 nm. This interfacial enhancement is not stable but anneals out with a characteristic log of time dependence. Fully annealed films have an activation energy for conduction ({sigma}T) of {approximately}0.47{plus_minus}.03 eV, consistent with bulk measurements. The observed annealing behavior can be fit with a model based on dislocation motion which implies that the increase in conduction near the interface is not due to the formation of a space-charge layer as previously reported but to defects generated during the growth process. This explanation is consistent with the behavior exhibited by CaF{sub 2} films grown under similar conditions.

  1. Improved morphology in electrochemically grown conducting polymer films

    SciTech Connect

    Rubinstein, I.; Gottesfeld, S.; Sabatani, E.

    1990-12-31

    A conducting polymer film with an improved space filling is formed on a metal electrode surface. A self-assembling monolayer is formed directly on the metal surface where the monolayer has a first functional group that binds to the metal surface and a second chemical group that forms a chemical bonding site for molecules forming the conducting polymer. The conducting polymer is then conventionally deposited by electrochemical deposition. In one example, a conducting film of polyaniline is formed on a gold electrode surface with an intermediate monolayer of p-aminothiophenol.

  2. Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Deng, Can; Jia, Zhi-Gang; Wang, Yi-Fan; Wang, Qi; Huang, Yong-Qing; Ren, Xiao-Min

    2013-11-01

    To explain different doping effects in a buffer layer, thermally annealed interface, and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition (MOCVD), the behaviors of unintentional doping in GaAs/Si films are investigated in detail. A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films, apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate, is proposed. The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together. However in the thermally annealed interface and upper epilayers, the third doping mechanism is dominant. According to the third mechanism, the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.

  3. Electron field emission from phase pure nanotube films grown in a methane/hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Küttel, Olivier M.; Groening, Oliver; Emmenegger, Christoph; Schlapbach, Louis

    1998-10-01

    Phase pure nanotube films were grown on silicon substrates by a microwave plasma under conditions which normally are used for the growth of chemical vapor deposited diamond films. However, instead of using any pretreatment leading to diamond nucleation we deposited metal clusters on the silicon substrate. The resulting films contain only nanotubes and also onion-like structures. However, no other carbon allotropes like graphite or amorphous clustered material could be found. The nanotubes adhere very well to the substrates and do not need any further purification step. Electron field emission was observed at fields above 1.5 V/μm and we observed an emission site density up to 104/cm2 at 3 V/μm. Alternatively, we have grown nanotube films by the hot filament technique, which allows to uniformly cover a two inch wafer.

  4. Effects of Seed Layer on YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Zama, Hideaki; Miyakoshi, Masayuki; Yamamoto, Hiroshi; Morishita, Tadataka

    1999-11-01

    Crack-free YBa2Cu3Ox (YBCO) films were grown by liquid phaseepitaxy (LPE) on MgO(100) substrates with a YBCO seed layer. Thecrystalline property of LPE was crucially dependent on that of theseed layer. On the purely c-axis-oriented seed layer, reasonable YBCOfilms were grown with a full-width at half maximum of the (005)reflection rocking curve, Δω, of 0.07°. In the case of the seedincluding an a-axis-oriented grain, the value of Δω of LPE films waspoor in reproducibility and larger than 0.1° on average. For thea-axis-oriented seed, no YBCO films grew under the growth conditionsin this study. X-ray topographic observations revealed that thecrystalline quality of MgO substrates limited the Δω of LPE films grownon them.

  5. Epitaxial Structure of (001)- and (111)-Oriented Perovskite Ferrate Films Grown by Pulsed-Laser Deposition.

    PubMed

    Chakraverty, Suvankar; Ohtomo, Akira; Okude, Masaki; Ueno, Kazunori; Kawasaki, Masashi

    2010-04-01

    The epitaxial structures of SrFeO(2.5) films grown on SrTiO(3) (001) and (111) substrates by PLD are reported. A layer-by-layer growth mode was achieved in the initial stage on both substrates. The films were stabilized with a monoclinic structure, where we identified the in-plane domain structures and orientation relationship. Our study presents a guide to control the heteroepitaxy of (111)-oriented noncubic perovskites. PMID:20383295

  6. Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

    NASA Technical Reports Server (NTRS)

    Dalal, Vikram L.; Knox, Ralph; Kandalaft, Nabeeh; Baldwin, Greg

    1991-01-01

    The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

  7. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  8. Effect of Ge on SiC film morphology in SiC/Si films grown by MOCVD

    SciTech Connect

    Sarney, W.L.; Salamanca-Riba, L.; Zhou, P.; Spencer, M.G.; Taylor, C.; Sharma, R.P.; Jones, K.A.

    1999-07-01

    SiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. The authors added Ge in the form of GeH{sub 2} to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1,000 C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH{sub 2} flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

  9. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    PubMed

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  10. Epitaxially grown strained pentacene thin film on graphene membrane.

    PubMed

    Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

    2015-05-01

    Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. PMID:25565340

  11. Study of critical current density in superconducting magnesium diboride films grown by ex situ annealing of CVD boron films

    NASA Astrophysics Data System (ADS)

    Hanna, Mina

    MgB2 films have been processed by different techniques, the most successful of which include the hybrid physical-chemical vapor deposition (HPCVD) as well as the ex situ high temperature annealing of boron films in Mg vapor. The advantage of the ex situ method is that it allows the coating of MgB2 on large and complex surfaces, such as superconducting radio frequency (RF) cavities. However, it has always been realized that HPCVD films can carry higher J c than the ex situ annealed films. In this research, we succeeded in fabricating high quality MgB2 films by the ex situ annealing technique that produced a Jc value as high as 1.8 x 106 A/cm 2 for 1 mum thick film at 20 K and self-field. This high Jc value is, however, considerably reduced at higher thicknesses similar to that observed in YBCO coated conductors. In order to understand the mechanisms responsible for J c decrease with increasing film thickness, we studied the Jc behavior as a function of thickness in MgB2 films fabricated by ex situ annealing at 840°C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thickness ranged between 300 nm and 10 mum. The values of Jc for these films ranged from 1.2 x 107 A/cm2 for 300 nm to 1.9 x 105 A/cm2 for 10 mum film thickness at 20 K and self-field. In addition, the results show that critical current (Ic) reaches a maximum value of 728 A/cm width at ˜1 mum thick MgB2 film at 20 K and self-field. These results of Jc and Ic behaviors with higher thickness are interpreted in terms of impurity diffusion during annealing and microstructural degradation for thicker films.

  12. The influence of Cd doping on the microstructure and optical properties of nanocrystalline copper ferrite thin films

    SciTech Connect

    El-Hagary, M.; Matar, A.; Shaaban, E.R.; Emam-Ismail, M.

    2013-06-01

    Highlights: ► The structural and optical properties of Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} thin films were studied. ► The micro structural parameters of the films have been determined. ► The room temperature reflectance and transmittance data are analyzed. ► The refractive index and energy gap are determined. ► The single oscillator parameters were calculated. - Abstract: Nanocrystalline thin films of mixed Cu–Cd ferrites, Cu{sub 1−x}Cd{sub x}Fe{sub 2}O{sub 4} (x = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 0.9 and 1), were deposited by electron beam evaporation technique. The films were annealed at 450 °C for 1 h. The effect of Cd doping on the structural and optical properties of the deposited films has been investigated by using X-ray diffraction (XRD) and optical spectrophotometry. XRD patterns of the annealed films show spinal cubic structure. The lattice parameter was found to increase with the increase of cadmium concentration. The crystallite size of the films was found to vary from 8 nm to 30 nm. The optical transition was found to be direct and indirect transitions with energy gaps decrease from 2.466 (x = 0) to 2.00 (x = 1) eV and from 2.148 (x = 0) to 1.824 (x = 1) eV, respectively. The refractive index dispersion of the films was found to increase with Cd content and discussed in terms of the Wemple–DiDomenico single oscillator model.

  13. Magnetic properties of hexagonal barium ferrite films on Pt/MgO(111) substrates annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Zheng, Hui; Han, Mangui; Zheng, Liang; Deng, Jiangxia; Zheng, Peng; Wu, Qiong; Deng, Longjiang; Qin, Huibin

    2016-09-01

    In this work, hexagonal barium ferrite thin films have been deposited on Pt/MgO(111) substrates by pulsed laser deposition. The anneal temperature dependence of crystal structures, extents of diffusion and magnetic properties have been studied. X-ray diffraction patterns reveal that the crystal structure changes from the hexagonal to the spinel when the anneal temperature increases. The texture with c-axis perpendicular to the film plane and the small c-axis dispersion angles (△ɵc) have been obtained in the film annealed at 950 °C for 10 h. Both the X-ray photoelectron spectroscopy profiles and energy dispersive spectrometer show that the diffusions of Mg2+and Fe3+cations are more obvious when the annealing temperature is higher than 950 °C. The film annealed at 950 °C show anisotropic and hard magnetic properties. The magnetic properties of film annealed at 1050 °C are soft. In order to study the cation diffusions between thin film and substrate, the concentration profiles of cations (Ba2+, Fe3+, Mg2+) have been measured by XPS for a thin film with a thickness of 130 nm annealed at 950°C and 1050°C, as shown in Fig. 3. When Ta is 950°C, as shown in Fig. 3(a), diffusions between the film and the substrate are scarcely detected. However, obvious inter-diffusions have been found for Mg2+ cation and Fe3+ cation when it is annealed at 1050°C. An obvious diffusion has not been found for Ba2+ cation at both annealing temperatures.

  14. High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Niki, S.; Fons, P. J.; Yamada, A.; Kurafuji, T.; Chichibu, S.; Nakanishi, H.; Bi, W. G.; Tu, C. W.

    1996-07-01

    CuInSe2 films have been grown by molecular beam epitaxy on pseudo-lattice-matched substrates that consist of a 1-μm-thick In0.29Ga0.71As layer grown on a linearly composition-graded InxGa1-xAs buffer (0≤x≤0.29) grown in turn on GaAs (001). The properties of these films have been compared with those of the films grown directly on GaAs (001). High resolution x-ray diffraction analysis on CuInSe2 grown on pseudo-lattice-matched substrates indicated substantial reduction on residual strain in the CuInSe2 films. A photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInSe2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density.

  15. Epitaxial growth of highly-crystalline spinel ferrite thin films on perovskite substrates for all-oxide devices.

    PubMed

    Moyer, Jarrett A; Gao, Ran; Schiffer, Peter; Martin, Lane W

    2015-01-01

    The potential growth modes for epitaxial growth of Fe3O4 on SrTiO3 (001) are investigated through control of the energetics of the pulsed-laser deposition growth process (via substrate temperature and laser fluence). We find that Fe3O4 grows epitaxially in three distinct growth modes: 2D-like, island, and 3D-to-2D, the last of which is characterized by films that begin growth in an island growth mode before progressing to a 2D growth mode. Films grown in the 2D-like and 3D-to-2D growth modes are atomically flat and partially strained, while films grown in the island growth mode are terminated in islands and fully relaxed. We find that the optimal structural, transport, and magnetic properties are obtained for films grown on the 2D-like/3D-to-2D growth regime boundary. The viability for including such thin films in perovskite-based all-oxide devices is demonstrated by growing a Fe3O4/La0.7Sr0.3MnO3 spin valve epitaxially on SrTiO3. PMID:26030835

  16. Epitaxial growth of highly-crystalline spinel ferrite thin films on perovskite substrates for all-oxide devices

    PubMed Central

    Moyer, Jarrett A.; Gao, Ran; Schiffer, Peter; Martin, Lane W.

    2015-01-01

    The potential growth modes for epitaxial growth of Fe3O4 on SrTiO3 (001) are investigated through control of the energetics of the pulsed-laser deposition growth process (via substrate temperature and laser fluence). We find that Fe3O4 grows epitaxially in three distinct growth modes: 2D-like, island, and 3D-to-2D, the last of which is characterized by films that begin growth in an island growth mode before progressing to a 2D growth mode. Films grown in the 2D-like and 3D-to-2D growth modes are atomically flat and partially strained, while films grown in the island growth mode are terminated in islands and fully relaxed. We find that the optimal structural, transport, and magnetic properties are obtained for films grown on the 2D-like/3D-to-2D growth regime boundary. The viability for including such thin films in perovskite-based all-oxide devices is demonstrated by growing a Fe3O4/La0.7Sr0.3MnO3 spin valve epitaxially on SrTiO3. PMID:26030835

  17. Room Temperature Ferromagnetism in Transition Metal Doped CVD-Grown ZnO Films and Nanostructures

    NASA Astrophysics Data System (ADS)

    Hill, D. H.; Gateau, R.; Bartynski, R. A.; Wu, P.; Lu, Y.; Wielunski, L.; Poltavets, V.; Greenblatt, M.; Arena, D. A.; Dvorak, J.; Calvin, S.

    2006-03-01

    We have characterized the chemical, compositional, and magnetic properties of Mn- and Fe-ion implanted epitaxial ZnO films and single crystal nanostructures grown by MOCVD as candidate room temperature diluted magnetic semiconductors. X-ray absorption spectroscopy (SXAS) shows that Mn-implanted films contain Mn^2+ ions which convert to a mixture of Mn^3+ and Mn^4+ upon annealing. Fe-implanted films contain a mixture of Fe^2+ and Fe^3+ which converts to a higher concentration of Fe^3+ upon annealing. XAS and preliminary analysis of EXAFS data indicate that the TM ions are substitutional for Zn. SQUID magnetometry shows that as-implanted films are ferromagnetic at 5K and the annealed films are ferromagnetic at room temperature. X-ray diffraction shows that the annealed films remain epitaxial with excellent long range order. Rutherford backscattering spectrometry indicates a substantial recovery of local order upon annealing as well. The properties of in-situ Fe-doped MOCVD-grown ZnO epitaxial films and nanostructures will also be discussed.

  18. Properties of phosphorus-doped zinc oxide films grown by pulsed laser deposition

    SciTech Connect

    Li Yuanjie; Liu Zilong; Ren Jiangbo

    2011-05-15

    Electrical and chemical bonding properties of P-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates were systematically characterized utilizing the Hall effect and x-ray photoelectron spectroscopy (XPS) measurements. Oxygen growth pressure and postannealing processing play a great role in the properties of these films. Increasing oxygen growth pressure from 5 to 20 Pa enhanced the resistivity of P-doped ZnO films by three orders of magnitude. P-doped ZnO films grown at 700 deg. C under 20 Pa O{sub 2} exhibited p-type conductivity with hole concentration of 5x10{sup 17} cm{sup -3} and hole mobility of 0.3 cm{sup 2}/V s. Rapid thermal annealing processing decreased the electron density in the P-doped ZnO films. XPS binding energies of P 2s and 2p peaks showed formation of P-O bonds which increased with oxygen pressure in the films. This indicates formation of defect complexes of P dopants occupying zinc sites P{sub Zn} and zinc vacancies V{sub Zn} in the P-doped ZnO films.

  19. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  20. Cu(In,Ga)Se 2 thin-film solar cells grown with cracked selenium

    NASA Astrophysics Data System (ADS)

    Kawamura, Masahiro; Fujita, Toshiyuki; Yamada, Akira; Konagai, Makoto

    2009-01-01

    Cu(In 1-xGa x)Se 2 (CIGS) films have been grown by using cracked selenium. In conventional evaporation system, the Se atoms were supplied as large clusters (Se x, x>5). However, the size of clusters can be reduced by the thermal cracking. The film qualities grown with small clusters (Se x, x<4) would be improved, since the smaller size molecules easily react with elemental metals, resulting in the reduction of selenium vacancies and the enhancement of surface migration. The CIGS films were deposited by the three-stage method with cracked selenium, and the films were evaluated by SEM, XRD, EDX, C- V measurement and admittance spectroscopy. It was found from the C- V characteristics that the carrier concentrations of the CIGS films grown with cracked selenium were increased with increasing the cracking temperature. The result clearly showed that the use of cracked selenium was effective for reduction of selenium vacancies. The conversion efficiency of 15.4% was obtained by using cracked selenium at a cracking temperature of 500 °C.

  1. Static and dynamic magnetic property of MBE-grown Co2FeAl films

    NASA Astrophysics Data System (ADS)

    Qiao, Shuang; Nie, Shuaihua; Huo, Yan; Zhao, Jianhua; Wu, Yizheng; Zhang, Xinhui

    2014-08-01

    In this work, the static and dynamic magnetic properties of Co2FeAl films grown by molecular beam epitaxy (MBE) were studied by employing the magneto-optical Kerr rotation and ferromagnetic resonance (FMR) measurements. The growth temperature dependent magnetocrystalline anisotropy of MBE-grown Co2FeAl films were first investigated by employing the rotating magneto-optical Kerr effect. Then the magnetization dynamics and Gilbert damping property for high quality Co2FeAl films were investigated in detail by combining both the FMR and time-resolved magneto-optical Kerr rotation techniques. The apparent damping parameter was found to show strong dependence on the strength of the applied magnetic field at low-field regime, but decrease drastically with increasing magnetic field and eventually become a constant value of 0.004 at high-field regime. The inhomogeneity of magnetocrystalline anisotropy and two-magnon scattering are suggested to be responsible for the observed abnormal damping properties observed especially at low field regime. The intrinsic damping parameter of 0.004 is deduced for our highly-ordered Co2FeAl film. Our results provide essential information for highly-ordered MBE-grown Co2FeA film and its possible application in spintronic devices.

  2. Red photoluminescence in praseodymium-doped titanate perovskite films epitaxially grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Takashima, Hiroshi; Ueda, Kazushige; Itoh, Mitsuru

    2006-12-01

    Intense red photoluminescence (PL) under ultraviolet (UV) excitation was observed in epitaxially grown Pr-doped Ca0.6Sr0.4TiO3 perovskite films. The films were grown on SrTiO3 (100) substrates by pulsed laser deposition, and their epitaxial growth was confirmed by x-ray diffraction and reflected high-energy electron diffraction. The observed sharp PL peak centered at 610nm was assigned to the transition of Pr3+ ions from the D21 state to the H43 state. The PL intensity was markedly enhanced by postannealing treatments at 1000°C, above the film-growth temperature of 600 or 800°C. Because the excitation and absorption spectra are similar to each other, it was suggested that the UV energy absorbed by the host lattice was transferred to the Pr ions, resulting in the red luminescence.

  3. Observation of three crystalline layers in hydrothermally grown BiFeO{sub 3} thick films

    SciTech Connect

    Lee, T. K.; Sung, K. D.; Jung, J. H.; Kim, T. H.; Ko, J.-H.

    2014-11-21

    We report the observation of three different crystalline layers in hydrothermally grown BiFeO{sub 3} (BFO) thick films on SrRuO{sub 3}/SrTiO{sub 3} substrates. High-resolution X-ray diffraction and transmission electron microcopy results suggest that compressively strained, partially relaxed epitaxial layers, and a mixture of polycrystalline and amorphous BFO layers, were successively formed from the bottom to the top of the films. The resistance and capacitance of the mixed layer were significantly lower than those of the epitaxial layers. The atomic concentrations of Bi and Fe in the mixed layer were fluctuating for each point. Based on the observed three crystalline layers, we have discussed the growth mechanism and the leakage current of hydrothermally grown BFO thick films.

  4. Friction and wear properties of smooth diamond films grown in fullerene-argon plasmas

    SciTech Connect

    Erdemir, A.; Fenske, G.R.; Bindal, C.; Zuiker, C.; Krauss, A.R.; Gruen, D.M.

    1995-08-01

    In this study, we describe the growth mechanism and the ultralow friction and wear properties of smooth (20-50 nm rms) diamond films grown in a microwave plasma consisting of Ar and fullerene (the carbon source). The sliding friction coefficients of these films against Si{sub 3}N{sub 4} balls are 0.04 and 0.1 in dry N{sub 2} and air, which are comparable to that of natural diamond sliding against the same pin material, but is lower by factors of 5 to 10 than that afforded by rough diamond films grown in conventional H{sub 2}-CH{sub 4} plasmas. Furthermore, the smooth diamond films produced in this work afforded wear rates to Si{sub 3}N{sub 4} balls that were two to three orders of magnitude lower than those of H{sub 2}-CH{sub 4} grown films. Mechanistically, the ultralow friction and wear properties of the fullerene-derived diamond films correlate well with their initially smooth surface finish and their ability to polish even further during sliding. The wear tracks reach an ultrasmooth (3-6 nm rms) surface finish that results in very little abrasion and ploughing. The nanocrystalline microstructure and exceptionally pure sp{sup 3} bonding in these smooth diamond films were verified by numerous surface and structure analytical methods, including x-ray diffraction, high-resolution AF-S, EELS, NEXAFS, SEM, and TEM. An AFM instrument was used to characterize the topography of the films and rubbing surfaces.

  5. Optical Properties Of {beta}-FeSi2 Thin Films Grown By Magnetron Sputtering

    SciTech Connect

    Tatar, B.; Kutlu, K.

    2007-04-23

    {beta}-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room temperature by unbalanced magnetron sputtering. The thicknesses of {beta}-FeSi2 thin films have been prepared to have value between 0.3-1{mu}m. Optical characteristic of the {beta}-FeSi2 films have been deduced using Fourier Transform Infrared Spectroscopy (FT-IR) in the wavelength range 1000-2000nm. The {beta}-FeSi2 films have been determinated to have optical direct band gap from the plot of ({alpha}h{upsilon})2 vs. h{upsilon} The direct band gap values of the films have been observed to vary between 0.82-0.89 eV depending on the type of substrates.

  6. Intramolecular and Intermolecular Interactions in Hybrid Organic-Inorganic Alucone Films Grown by Molecular Layer Deposition.

    PubMed

    Park, Yi-Seul; Kim, Hyein; Cho, Boram; Lee, Chaeyun; Choi, Sung-Eun; Sung, Myung Mo; Lee, Jin Seok

    2016-07-13

    Investigation of molecular interactions in polymeric films is crucial for understanding and engineering multiscale physical phenomena correlated to device function and performance, but this often involves a compromise between theoretical and experimental data, because of poor film uniformity. Here, we report the intramolecular and intermolecular interactions inside the ultrathin and conformal hybrid organic-inorganic alucone films grown by molecular layer deposition, based on sequential and self-limiting surface reactions. Varying the carbon chain length of organic precursors, which affects their molecular flexibility, caused intramolecular interactions such as double reactions by bending of the molecular backbone, resulting in formation of hole vacancies in the films. Furthermore, intermolecular interactions in alucone polymeric films are dependent on the thermal kinetics of molecules, leading to binding failures and cross-linking at low and high growth temperatures, respectively. We illustrate these key interactions and identify molecular geometries and potential energies by density functional theory calculations. PMID:27314844

  7. Mechanically tunable magnetic properties of Fe81Ga19 films grown on flexible substrates

    NASA Astrophysics Data System (ADS)

    Dai, Guohong; Zhan, Qingfeng; Liu, Yiwei; Yang, Huali; Zhang, Xiaoshan; Chen, Bin; Li, Run-Wei

    2012-03-01

    We investigated on magnetic properties of magnetostrictive Fe81Ga19 films grown on flexible polyethylene terephthalate (PET) substrates under various mechanical strains. The unstrained Fe81Ga19 films exhibit a significant uniaxial magnetic anisotropy due to a residual stress in PET substrates. It was found that the squareness of hysteresis loops can be tuned by an application of strains, inward/compressive or outward/tensile bending of the films. A modified Stoner-Wohlfarth model with considering a distribution of easy axes in polycrystalline films was developed to account for the mechanically tunable magnetic properties in flexible Fe81Ga19 films. These results provide an alternative way to tune mechanically magnetic properties, which is particularly important for developing flexible magnetoelectronic devices.

  8. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    NASA Astrophysics Data System (ADS)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  9. As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation

    SciTech Connect

    Satoh, T.; Yoshitake, T.; Miura, S.; Fujita, J.; Kubo, Y.; Igarashi, H.

    1989-08-14

    Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 /degree/C by coevaporation. The /ital c/-axis lattice constant of this system was controlled to the values of 24--43 A by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (/ital T//sub /ital c/, zero/) of the as-grown Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub /ital x// film was 79 K. The best Bi/sub 2/(Sr, Ca)/sub 4/Cu/sub 3/O/sub /ital x// film showed an onset temperature of 105 K and /ital T//sub /ital c/, zero/ zero of 78 K after annealing at 400 /degree/C for 1 h.

  10. Thin film transistors using PECVD-grown carbon nanotubes.

    PubMed

    Ono, Yuki; Kishimoto, Shigeru; Ohno, Yutaka; Mizutani, Takashi

    2010-05-21

    Thin film transistors with a carbon nanotube (CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I-V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 microA mm(-1), which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 10(5), has been realized in the relatively short channel length of 10 microm. The field effect mobility of the device was 5.8 cm(2) V(-1) s(-1). PMID:20418603

  11. Thin film transistors using PECVD-grown carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Ono, Yuki; Kishimoto, Shigeru; Ohno, Yutaka; Mizutani, Takashi

    2010-05-01

    Thin film transistors with a carbon nanotube (CNT) network as a channel have been fabricated using grid-inserted plasma-enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of the CNTs with semiconducting behavior in the I-V characteristics of CNT field effect transistors (CNT-FETs). Taking advantage of the preferential growth and suppression of bundle formation, a large ON current of 170 µA mm - 1, which is among the largest in these kinds of devices with a large ON/OFF current ratio of about 105, has been realized in the relatively short channel length of 10 µm. The field effect mobility of the device was 5.8 cm2 V - 1 s - 1.

  12. Study of high [Tc] superconducting thin films grown by MOCVD

    SciTech Connect

    Erbil, A.

    1990-01-01

    Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi[sub 2]Te[sub 3] were deposited, mostly on GaAs. Several YBa[sub 2]Cu[sub 3]O[sub 7] compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10[sup 4]). YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] and Tl[sub 2]CaBa[sub 2]Cu[sub 2]O[sub y] thin films were deposited by MOCVD on common substrates such as glass.

  13. Superconducting YBa 2Cu 3O 7- δ thin film grown on metallic film evaporated on MgO

    NASA Astrophysics Data System (ADS)

    Verdyan, A.; Azoulay, J.; Lapsker, I.

    2001-03-01

    At present it is commonly accepted that thin film formation of YBa 2Cu 3O 7- δ (YBCO) on conducting substrate is one of the keys to further development of advanced devices in the microelectronic and other applications. We have grown YBCO thin films by resistive evaporation technique on MgO coated with metallic layers (Ni or Ag). A simple inexpensive vacuum system equipped with resistively heated boats for metal and precursor mixture of yttrium, copper and barium fluoride powders was used. X-ray diffraction (XRD) and scanning electron microscopy techniques were used for texture, morphology and surface analyses respectively. Electrical and magnetical properties were determined by a standard dc four-probe method. The way of heating process is shown to be critical parameter in the film quality. The physical and electrical properties of the YBCO films are discussed in light of the fact that XRD measurements done on the metallic buffer layers have revealed a multicrystalline structure.

  14. Thin film solar cells grown by organic vapor phase deposition

    NASA Astrophysics Data System (ADS)

    Yang, Fan

    Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

  15. Magnetic and transport properties of epitaxial thin film MgFe2O4 grown on MgO (100) by molecular beam epitaxy

    PubMed Central

    Wu, Han-Chun; Mauit, Ozhet; Coileáin, Cormac Ó; Syrlybekov, Askar; Khalid, Abbas; Mouti, Anas; Abid, Mourad; Zhang, Hong-Zhou; Abid, Mohamed; Shvets, Igor V.

    2014-01-01

    Magnesium ferrite is a very important magnetic material due to its interesting magnetic and electrical properties and its chemical and thermal stability. Here we report on the magnetic and transport properties of epitaxial MgFe2O4 thin films grown on MgO (001) by molecular beam epitaxy. The structural properties and chemical composition of the MgFe2O4 films were characterized by X-Ray diffraction and X-Ray photoelectron spectroscopy, respectively. The nonsaturation of the magnetization in high magnetic fields observed for M (H) measurements and the linear negative magnetoresistance (MR) curves indicate the presence of anti-phase boundaries (APBs) in MgFe2O4. The presence of APBs was confirmed by transmission electron microscopy. Moreover, post annealing decreases the resistance and enhances the MR of the film, suggesting migration of the APBs. Our results may be valuable for the application of MgFe2O4 in spintronics. PMID:25388355

  16. Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Banks, Curtis E.; Frazier, Donald O.; Penn, Benjamin; Abdeldayem, Hossin; Hicks, Roslin

    1999-01-01

    Phthalocyanine is a very stable organic material in the atmosphere and has been used in numerous applications, such as optical switching and optical storage devices. Although this material has already been discovered for several decades and has had extensive studies conducted on it, many properties still need to be better understood, for example, the mechanisms of forming different solid phases and of changing film morphology by external forces. Phthalocyanine has two preferred solid phases (alpha and beta phases) for which the crystal structures, surface morphology and optical properties are different. In order to investigate these phenomena and the relationship among them, phthalocyanine films have been synthesized by vapor deposition on quartz substrates with and without an external electrical field. Some substrates were coated with a very thin gold film for the electrical field. These films have been characterized using x-ray diffraction, scanning electron microscopy, Fourier transfer infrared spectroscopy, and Z-scan technique. The films have excellent chemical and thermal stability. However, the surface of these films grown without the electrical field shows flower-like morphology. When films are deposited under an electrical field (approximately 3000 V/cm), an aligned structure is revealed on the surface. A comparison of the structure, morphology, optical properties, and the growth mechanism for these films with and without an electrical field will be discussed.

  17. Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Outlaw, R. A.; Hopson, P., Jr.

    1984-01-01

    The films, which are approximately 10 microns in thickness, are grown epitaxially on polished (100) NaCl substrates at 450 C by plasma enhanced chemical vapor deposition. Upon cooling, the films are separated from the substrate by differential shear stress, leaving free-standing films of Ge which can be handled. Growths are attained by nucleating at minimum plasma power for very brief intervals and then raising the power to 65 W to increase the growth rate to approximately 10 microns/h. It is found that substrate exposure to the plasma at too high a power for too long a time sputters and erodes the surface, thereby substantially degrading the nucleation process and the ultimate growths. It is noted that the free-standing films are visually specular and exhibit a high degree of crystalline order when examined by X-ray diffraction. Auger electron spectroscopy and energy dispersive analysis of X-rays reveal no detectable bulk contamination.

  18. Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

    SciTech Connect

    Serrao, Claudy R.; You, Long; Gadgil, Sushant; Hu, Chenming; Salahuddin, Sayeef; Diamond, Anthony M.; Hsu, Shang-Lin; Clarkson, James; Carraro, Carlo; Maboudian, Roya

    2015-02-02

    Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.

  19. Structural, optical and electrochromic properties of nickel oxide thin films grown from electrodeposited nickel sulphide

    NASA Astrophysics Data System (ADS)

    Uplane, M. M.; Mujawar, S. H.; Inamdar, A. I.; Shinde, P. S.; Sonavane, A. C.; Patil, P. S.

    2007-10-01

    Nickel oxide thin films were grown onto FTO-coated glass substrates by a two-step process: electrodeposition of nickel sulphide and their thermal oxidation at 425, 475 and 525 °C. The influence of thermal oxidation temperature on structural, optical, morphological and electrochromic properties was studied. The structural properties undoubtedly revealed NiO formation. The electrochromic properties were studied by means of cyclic voltammetry. The films exhibited anodic electrochromism, changing from a transparent state to a coloured state at +0.75 V versus SCE, i.e. by simultaneous ion and electron ejection. The transmittance in the coloured and bleached states was recorded to access electrochromic quality of the films. Colouration efficiency and electrochromic reversibility were found to be maximum (21 mC/cm 2 and 89%, respectively) for the films oxidized at 425 °C. The optical band gap energy of nickel oxide slightly varies with increase in annealing temperature.

  20. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  1. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  2. Group III-nitride thin films grown using MBE and bismuth

    DOEpatents

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  3. Adsorption of cobalt ferrite nanoparticles within layer-by-layer films: a kinetic study carried out using quartz crystal microbalance.

    PubMed

    Alcantara, Gustavo B; Paterno, Leonardo G; Afonso, André S; Faria, Ronaldo C; Pereira-da-Silva, Marcelo A; Morais, Paulo C; Soler, Maria A G

    2011-12-28

    The paper reports on the successful use of the quartz crystal microbalance technique to assess accurate kinetics and equilibrium parameters regarding the investigation of in situ adsorption of nanosized cobalt ferrite particles (CoFe(2)O(4)--10.5 nm-diameter) onto two different surfaces. Firstly, a single layer of nanoparticles was deposited onto the surface provided by the gold-coated quartz resonator functionalized with sodium 3-mercapto propanesulfonate (3-MPS). Secondly, the layer-by-layer (LbL) technique was used to build multilayers in which the CoFe(2)O(4) nanoparticle-based layer alternates with the sodium sulfonated polystyrene (PSS) layer. The adsorption experiments were conducted by modulating the number of adsorbed CoFe(2)O(4)/PSS bilayers (n) and/or by changing the CoFe(2)O(4) nanoparticle concentration while suspended as a stable colloidal dispersion. Adsorption of CoFe(2)O(4) nanoparticles onto the 3-MPS-functionalized surface follows perfectly a first order kinetic process in a wide range (two orders of magnitude) of nanoparticle concentrations. These data were used to assess the equilibrium constant and the adsorption free energy. Alternatively, the Langmuir adsorption constant was obtained while analyzing the isotherm data at the equilibrium. Adsorption of CoFe(2)O(4) nanoparticles while growing multilayers of CoFe(2)O(4)/PSS was conducted using colloidal suspensions with CoFe(2)O(4) concentration in the range of 10(-8) to 10(-6) (moles of cobalt ferrite per litre) and for different numbers of cycles n = 1, 3, 5, and 10. We found the adsorption of CoFe(2)O(4) nanoparticles within the CoFe(2)O(4)/PSS bilayers perfectly following a first order kinetic process, with the characteristic rate constant growing with the increase of CoFe(2)O(4) nanoparticle concentration and decreasing with the rise of the number of LbL cycles (n). Additionally, atomic force microscopy was employed for assessing the LbL film roughness and thickness. We found the film

  4. Solution-Grown Monocrystalline Hybrid Perovskite Films for Hole-Transporter-Free Solar Cells.

    PubMed

    Peng, Wei; Wang, Lingfei; Murali, Banavoth; Ho, Kang-Ting; Bera, Ashok; Cho, Namchul; Kang, Chen-Fang; Burlakov, Victor M; Pan, Jun; Sinatra, Lutfan; Ma, Chun; Xu, Wei; Shi, Dong; Alarousu, Erkki; Goriely, Alain; He, Jr-Hau; Mohammed, Omar F; Wu, Tom; Bakr, Osman M

    2016-05-01

    High-quality perovskite monocrystalline films are successfully grown through cavitation-triggered asymmetric crystallization. These films enable a simple cell structure, ITO/CH3 NH3 PbBr3 /Au, with near 100% internal quantum efficiency, promising power conversion efficiencies (PCEs) >5%, and superior stability for prototype cells. Furthermore, the monocrystalline devices using a hole-transporter-free structure yield PCEs ≈6.5%, the highest among other similar-structured CH3 NH3 PbBr3 solar cells to date. PMID:26931100

  5. One-dimensional edge state of Bi thin film grown on Si(111)

    SciTech Connect

    Kawakami, Naoya; Lin, Chun-Liang; Kawai, Maki; Takagi, Noriaki; Arafune, Ryuichi

    2015-07-20

    The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy and spectroscopy. We have found two types of edges, one of which hosts an electronic state localized one-dimensionally. We also revealed the energy dispersion of the localized edge state from the evolution of quasiparticle interference patterns as a function of energy. These spectroscopic findings well reproduce those acquired for the cleaved surface of the bulk Bi crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. The present results indicate that the deposited Bi film provides a tractable stage for further scrutiny of the one-dimensional edge state.

  6. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  7. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  8. Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

    SciTech Connect

    Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.; Shluger, AL

    2015-10-22

    Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate that this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.

  9. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  10. Conducting (Si-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy

    SciTech Connect

    Kim, J.G.; Moorthy, M.; Park, R.M.

    1999-07-01

    As a member of the III-V nitride semiconductor family, AlN, which has a direct energy-gap of 6.2eV, has received much attention as a promising material for many applications. However, despite the promising attributes of AlN for various semiconductor devices, research on AlN has been limited and n-type conducting AlN has not been reported. The objective of this research was to understand the factors impacting the conductivity of AlN and to control the conductivity of this material through intentional doping. Prior to the intentional doping study, growth of undoped AlN epilayers was investigated. Through careful selection of substrate preparation methods and growth parameters, relatively low-temperature molecular beam epitaxial growth of AlN films was established which resulted in insulating material. Intentional Si doping during epilayer growth was found to result in conducting films under specific growth conditions. Above a growth temperature of 900 C, AlN films were insulating, however, below a growth temperature of 900 C, the AlN films were conducting. The magnitude of the conductivity and the growth temperature range over which conducting AlN films could be grown were strongly influenced by the presence of a Ga flux during growth. For instance, conducting, Si-doped, AlN films were grown at a growth temperature of 940 C in the presence of a Ga flux while the films were insulating when grown in the absence of a Ga flux at this particular growth temperature. Also, by appropriate selection of the growth parameters, epilayers with n-type conductivity values as large as 0.2 {Omega}{sup {minus}1} cm{sup {minus}1} for AlN and 17 {Omega}{sup {minus}1} cm{sup {minus}1} for Al{sub 0.75}Ga{sub 0.25}N were grown in this work for the first time.

  11. Elastic properties of B-C-N films grown by N{sub 2}-reactive sputtering from boron carbide targets

    SciTech Connect

    Salas, E.; Jiménez Riobóo, R. J.; Jiménez-Villacorta, F.; Prieto, C.; Sánchez-Marcos, J.; Muñoz-Martín, A.; Prieto, J. E.; Joco, V.

    2013-12-07

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B{sub 4}C target and N{sub 2} as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions.

  12. Magnetic and electromagnetic properties of Pr doped strontium ferrite/polyaniline composite film

    NASA Astrophysics Data System (ADS)

    Huang, Ying; Li, Yuqing; Wang, Yan

    2014-11-01

    This paper reported three acid (including hydrochloric acid HCl, p-toluenesulfonic acid PTS and D-camphor-10-acid CSA) doped SrPr0.2Fe11.8O19/PANI composite film and the HCl-PANI film prepared by a sol-gel method and in-situ oxidative polymerization. The characteristics of the film phase structure, surface morphology, conductivity and magnetic and electromagnetic properties were studied by using XRD, XPS, FESEM, four-probe tester, VSM and Vector Network Analyzer. The resistivity of organic acid doped composite films is higher than that of the HCl doped one. The saturation and remanent magnetization of PTS and HCl doped composite films are greater than the CSA-doped one; however, the coercivity of the three acid doped composite films is basically 5546 Oe. The saturation magnetization, remanent magnetization and coercivity of SrPr0.2Fe11.8O19 film are greater than those of the SrPr0.2Fe11.8O19-PANI composite film. In the frequency range of 8-12 GHz, the dielectric loss of HCl-PANI film is the maximum, and the dielectric loss of SrPr0.2Fe11.8O19 film is the minimum; the magnetic loss of the four films is in descending order as SrPr0.2Fe11.8O19 film, PrSrM/(HCl-PANI) composite film, PrSrM/(CSA-PANI) and HCl-PANI film.

  13. Photoluminescence, electrical and structural properties of ZnO films, grown by ALD at low temperature

    NASA Astrophysics Data System (ADS)

    Przeździecka, E.; Wachnicki, Ł.; Paszkowicz, W.; Łusakowska, E.; Krajewski, T.; Łuka, G.; Guziewicz, E.; Godlewski, M.

    2009-10-01

    We report the first results of the low-temperature photoluminescence study on polycrystal zinc oxide (ZnO) films obtained by atomic layer deposition at 100 °C, 130 °C and 200 °C. These ZnO films, when studied 'as-grown', show a strong excitonic emission even at room temperature. Low-temperature (T = 9 K) photoluminescence reveals lack of defect-related bands and a sharp photoluminescence peak at 3.36 eV with full width at half maximum of 6 meV which is comparable with the value reported for good quality bulk ZnO crystals. The energy position of the excitonic peak scales with temperature according to standard formulas and give the Debye temperature of 963 ± 26 K. We show that optical properties of low-temperature 'as-grown' ZnO films are correlated with structural and electrical ones and that optical study can be a valuable tool for evaluation of quality of ZnO films for novel electronic applications.

  14. Adsorption properties of Mg-Al layered double hydroxides thin films grown by laser based techniques

    NASA Astrophysics Data System (ADS)

    Matei, A.; Birjega, R.; Vlad, A.; Filipescu, M.; Nedelcea, A.; Luculescu, C.; Zavoianu, R.; Pavel, O. D.; Dinescu, M.

    2012-09-01

    Powdered layered double hydroxides (LDHs) have been widely studied due to their applications as catalysts, anionic exchangers or host materials for inorganic and/or organic molecules. Assembling nano-sized LDHs onto flat solid substrates forming thin films is an expanding area of research due to the prospects of novel applications as sensors, corrosion-resistant coatings, components in optical and magnetic devices. Continuous and adherent thin films were grown by laser techniques (pulsed laser deposition - PLD and matrix assisted pulsed laser evaporation - MAPLE) starting from targets of Mg-Al LDHs. The capacity of the grown thin films to retain a metal (Ni) from contaminated water has been also explored. The thin films were immersed in an Ni(NO3)2 aqueous solutions with Ni concentrations of 10-3% (w/w) (1 g/L) and 10-4% (w/w) (0.1 g/L), respectively. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) combined with energy dispersive X-ray analysis (EDX) were the techniques used to characterize the prepared materials.

  15. Observation of longitudinal spin-Seebeck effect in cobalt-ferrite epitaxial thin films

    SciTech Connect

    Niizeki, Tomohiko; Kikkawa, Takashi; Uchida, Ken-ichi; Oka, Mineto; Suzuki, Kazuya Z.; Yanagihara, Hideto; Kita, Eiji; Saitoh, Eiji

    2015-05-15

    The longitudinal spin-Seebeck effect (LSSE) has been investigated in cobalt ferrite (CFO), an exceptionally hard magnetic spinel ferrite. A bilayer of a polycrystalline Pt and an epitaxially-strained CFO(110) exhibiting an in-plane uniaxial anisotropy was prepared by reactive rf sputtering technique. Thermally generated spin voltage in the CFO layer was measured via the inverse spin-Hall effect in the Pt layer. External-magnetic-field (H) dependence of the LSSE voltage (V{sub LSSE}) in the Pt/CFO(110) sample with H ∥ [001] was found to exhibit a hysteresis loop with a high squareness ratio and high coercivity, while that with H∥[11{sup -}0] shows a nearly closed loop, reflecting the different anisotropies induced by the epitaxial strain. The magnitude of V{sub LSSE} has a linear relationship with the temperature difference (ΔT), giving the relatively large V{sub LSSE} /ΔT of about 3 μV/K for CFO(110) which was kept even at zero external field.

  16. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    NASA Astrophysics Data System (ADS)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  17. Electrochemical synthesis and properties of ceria films grown on stainless steel

    NASA Astrophysics Data System (ADS)

    Živković, Lj. S.; Lair, V.; Lupan, O.; Ringuedé, A.

    2011-12-01

    Electrochemical synthesis of ceria films was performed on a stainless steel substrate in view of Solid Oxide Fuel Cells (SOFC) applications. Films were obtained from aqueous nitrate solutions via cathodic deposition method at room temperature. A constant potential value of -0.8 V/(SCE) was applied to reduce the molecular oxygen as hydroxide precursor, leading to a formation of adherent, homogeneous and covering films in 20 min deposition time. Structure, morphology and composition of as-grown coatings were studied by X-ray diffraction, Raman and energy-dispersive X-ray spectroscopy, as well as scanning electron microscopy. Cubic fluorite-type nanostructured ceria of leaf-like particles was synthesized. Thermal annealing (600°C, 1 h) was found to enhance ceria crystallinity.

  18. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    NASA Astrophysics Data System (ADS)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  19. A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Cheng; Chen, Yu-Sung; Lee, Chao-Chun; Wu, Jen-Kai; Lee, Hsin-Yen; Liang, Chi-Te; Chang, Yuan Huei

    2016-06-01

    We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm-3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

  20. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    NASA Astrophysics Data System (ADS)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  2. Epitaxial pentacene films grown on the surface of ion-beam-processed gate dielectric layer

    NASA Astrophysics Data System (ADS)

    Chou, W. Y.; Kuo, C. W.; Cheng, H. L.; Mai, Y. S.; Tang, F. C.; Lin, S. T.; Yeh, C. Y.; Horng, J. B.; Chia, C. T.; Liao, C. C.; Shu, D. Y.

    2006-06-01

    The following research describes the process of fabrication of pentacene films with submicron thickness, deposited by thermal evaporation in high vacuum. The films were fabricated with the aforementioned conditions and their characteristics were analyzed using x-ray diffraction, scanning electron microscopy, polarized Raman spectroscopy, and photoluminescence. Organic thin-film transistors (OTFTs) were fabricated on an indium tin oxide coated glass substrate, using an active layer of ordered pentacene molecules, which were grown at room temperature. Pentacene film was aligned using the ion-beam aligned method, which is typically employed to align liquid crystals. Electrical measurements taken on a thin-film transistor indicated an increase in the saturation current by a factor of 15. Pentacene-based OTFTs with argon ion-beam-processed gate dielectric layers of silicon dioxide, in which the direction of the ion beam was perpendicular to the current flow, exhibited a mobility that was up to an order of magnitude greater than that of the controlled device without ion-beam process; current on/off ratios of approximately 106 were obtained. Polarized Raman spectroscopy investigation indicated that the surface of the gate dielectric layer, treated with argon ion beam, enhanced the intermolecular coupling of pentacene molecules. The study also proposes the explanation for the mechanism of carrier transportation in pentacene films.

  3. Preparation and characterization of epitaxially grown unsupported yttria-stabilized zirconia (YSZ) thin films

    NASA Astrophysics Data System (ADS)

    Götsch, Thomas; Mayr, Lukas; Stöger-Pollach, Michael; Klötzer, Bernhard; Penner, Simon

    2015-03-01

    Epitaxially grown, chemically homogeneous yttria-stabilized zirconia thin films ("YSZ", 8 mol% Y2O3) are prepared by direct-current sputtering onto a single-crystalline NaCl(0 0 1) template at substrate temperatures ≥493 K, resulting in unsupported YSZ films after floating off NaCl in water. A combined methodological approach by dedicated (surface science) analytical characterization tools (transmission electron microscopy and diffraction, atomic force microscopy, angle-resolved X-ray photoelectron spectroscopy) reveals that the film grows mainly in a [0 0 1] zone axis and no Y-enrichment in surface or bulk regions takes place. In fact, the Y-content of the sputter target is preserved in the thin films. Analysis of the plasmon region in EEL spectra indicates a defective nature of the as-deposited films, which can be suppressed by post-deposition oxidation at 1073 K. This, however, induces considerable sintering, as deduced from surface morphology measurements by AFM. In due course, the so-prepared unsupported YSZ films might act as well-defined model systems also for technological applications.

  4. Topological limit of ultrathin quasi-freestanding Bi2Te3 films grown on Si(111)

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Wang, Huan-Hua; Bian, Guang; Bissen, Mark; Zhang, Zhan; Miller, Tom; Hong, Hawoong; Chiang, Tai-Chang

    2013-03-01

    A fundamental issue for ultrathin topological films is the thickness limit below which the topological surface states become impacted by interfacial interactions. We show that for Bi2Te3 grown on Si(111) this limit is four quintuple layers (QLs) based on angle-resolved photoemission measurements, using optimized photon energies and polarizations, of the Dirac cone warping and interaction-induced gap as a function of film thickness. The results are close to theoretical predictions for free-standing films, despite the expected strong bonding of the film with the reactive Si(111) substrate. In-situ surface X-ray scattering (SXS) study shows that a buffer layer exist on the Si(111) surface, which effectively saturates all the Si(111) dangling bonds. These interfacial properties, revealed only by diffractions from deeply penetrating X-rays, are critical in understanding the topological surface states in ultrathin films, where electronic coupling is strongly enhanced. Our SXS measurement also yields new information regarding the internal structures of these topological thin films, including layer stacking, QL-by-QL growth, relaxations, etc.

  5. Spatially resolved Raman studies of diamond films grown by chemical vapor deposition

    SciTech Connect

    Ager, J.W. III; Veirs, D.K.; Rosenblatt, G.M. )

    1991-03-15

    The frequency and line shape of the diamond Raman line are examined in detail for a series of microwave-plasma-assisted chemical-vapor-deposition films grown on Si. The Raman lines in the films appear at higher frequency (shifts of up to 3 cm{sup {minus}1}) than that of natural diamond and the observed lines are symmetric with broader linewidths than that of natural diamond, ranging from 5.7 to 17.1 cm{sup {minus}1}. In addition, the line frequencies and linewidths are correlated; the films with the highest vibrational frequencies have the largest linewidths. The data include single-point measurements on eight films grown under different conditions as well as 500 data points from different positions on a single film that were obtained in a spatially resolved Raman experiment. Several mechanisms for the frequency shift and the correlation of the linewidth with frequency are considered including phonon confinement, residual stress, and defect scattering. Contrary to the observations, Raman line shapes computed from the phonon-confinement model (which has been used successfully to model Raman scattering in microcrystalline Si and GaAs), using phonon-dispersion curves for diamond from the literature, are highly asymmetric at the linewidths observed. It is concluded that the observed shifts in the diamond Raman line do not arise from phonon confinement alone and arise primarily from compressive stress. The line broadening also is not produced by phonon confinement alone and may arise from decreasing phonon lifetime associated with scattering from defects or from an inhomogeneous stress distribution in the films. The observed correlation between Raman line frequency and width suggests that the degree of compressive stress may be associated with the density of microcrystalline defects.

  6. Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

    2014-12-01

    Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

  7. Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

    SciTech Connect

    Yanagihara, H. Utsumi, Y.; Niizeki, T. Inoue, J.; Kita, Eiji

    2014-05-07

    We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

  8. Impedance spectroscopy of the oxide films formed during high temperature oxidation of a cobalt-plated ferritic alloy

    NASA Astrophysics Data System (ADS)

    Velraj, S.; Zhu, J. H.; Painter, A. S.; Du, S. W.; Li, Y. T.

    2014-02-01

    Impedance spectroscopy was used to evaluate the oxide films formed on cobalt-coated Crofer 22 APU ferritic stainless steel after thermal oxidation at 800 °C in air for different times (i.e. 2, 50, 100 and 500 h). Impedance spectra of the oxide films exhibited two or three semicircles depending on the oxidation time, which correspond to the presence of two or three individual oxide layers. Coupled with scanning electron microscopy/energy-dispersive spectroscopy (SEM/EDS) and X-ray diffraction (XRD), the individual oxide layer corresponding to each semicircle was determined unambiguously. Impedance spectrum analysis of the oxide films formed on the sample after thermal exposure at 800 °C in air for 2 h led to the identification of the low-frequency and high-frequency semicircles as being from Cr2O3 and Co3O4, respectively. SEM/EDS and XRD analysis of the 500-h sample clearly revealed the presence of three oxide layers, analyzed to be Co3-xCrxO4, CoCr2O4, and Cr2O3. Although the SEM images of the 50-h and 100-h samples did not clearly show the CoCr2O4 layer, impedance plots implied their presence. The oxide scales were assigned to their respective semicircles and the electrical properties of Co3-xCrxO4, CoCr2O4 and Cr2O3 were determined from the impedance data.

  9. High resolution transmission electron microscopy study of diamond films grown from fullerene precursors

    SciTech Connect

    Luo, J.S.; Gruen, D.M.; Krauss, A.R.

    1995-07-01

    High-resolution transmission electron microscopy (HRTEM) has been used to investigate the microstructure of diamond films grown by plasma-assisted chemical vapor deposition using fullerene precursors. HRTEM observations of as-grown films revealed an array of larger crystals (>200 nm) within a polycrystalline matrix of much smaller crystallites (<20 nm). The randomly oriented small crystallites were nearly free of structural imperfections such as stacking faults or twins, while the larger ones had preferred <110> orientations with respect to the Si (100) substrate and showed evidence of structural defects on the periphery of the crystals. The most common defects were V-shaped {Sigma}9 twin boundaries, which are generally believed to serve as re-entrant sites for diamond nucleation and growth. The observation of growth steps on both (111) and (110) surfaces seems to support a reaction model in which fragments of C{sub 60}, including C{sub 2}, are considered the growth species. In particular, the nanocrystallinity of the films is most likely due to a high carbon cluster density from C{sub 60} fragmentation at or near the diamond surface, which can serve as nucleation sites for the growth of new crystallites.

  10. Heteroepitaxial film silicon solar cell grown on Ni-W foils

    SciTech Connect

    Wee, Sung Hun; Cantoni, Claudia; Fanning, Thomas; Teplin, Charles; Bogorin, Daniela Florentina; Bornstein, Jon; Bowers, Karen; Schroeter,; Hasoon, Falah; Branz, Howard; Paranthaman, Mariappan Parans; Goyal, Amit

    2013-01-01

    Today, silicon-wafer-based technology dominates the photovoltaic (PV) industry because it enables high efficiency, is produced from abundant, non-toxic materials and is proven in the PV marketplace.[1] However, costs associated with the wafer itself limit ultimate cost reductions.[1,2] PV based on absorber layers of crystalline Si with only 2 to 10 m thickness are a promising route to reduce these costs, while maintaining efficiencies above 15%.[3-5] With the goal of fabricating low-cost film crystalline Si (c-Si), recent research has explored wafer peeling,[6,7] crystallization of amorphous silicon films on glass,[4,8-10] and seed and epitaxy approaches.[3,5,11] In this third approach, one initially forms a seed layer that establishes the grain size and crystalline order. The Si layer is then grown heteroepitaxially on the seed layer, so that it replicates the seed crystal structure. In all of these film c-Si approaches, the critical challenge is to grow c-Si with adequate material quality: specifically, the diffusion length (LD) must be at least three times the film thickness.[12] In polycrystalline Si films, grain boundaries (GBs) are recombination-active and significantly reduce LD. This adverse effects of GBs motivates research into growth of large grained c-Si [13,14] (for a low density of GBs) and biaxially-textured c-Si [11] (for low-angle GBs).

  11. Characterization of high-quality Bi2Se3 films grown using a selenium cracker source

    NASA Astrophysics Data System (ADS)

    Ginley, Theresa; Law, Stephanie

    Topological insulators, including Bi2Se3, are becoming increasingly prevalent in research due to their unique electronic properties--these materials exhibit an insulating bulk but conducting surfaces with electron spin-momentum locking. Using Molecular Beam Epitaxy (MBE) it is possible to grow high-quality thin films of Bi2Se3. Yet these films have not lived up to their potential, in part due to significant bulk conductivity arising from material defects like selenium vacancies. Current MBE growth methods for Bi2Se3 use standard selenium sources that evaporate large selenium molecules which must then be cracked into smaller molecules to be incorporated into the film. This process is inefficient and requires very high fluxes of selenium for good quality growths. However, using a selenium cracking source results in the evaporation of monomers and dimers, facilitating incorporation into the film. We will present electrical, structural, and optical measurements demonstrating that the use of a cracker source allows films to be grown using much lower selenium:bismuth flux ratios with good mobility and low carrier density. T. G. and S. L. gratefully acknowledge funding from the University of Delaware Research Foundation Grant 15A00862.

  12. Transparent conductive Al-doped ZnO thin films grown at room temperature

    SciTech Connect

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  13. Epitaxially-Grown Europium-Doped Barium Titanate Films on Various Substrates for Red Emission.

    PubMed

    Hwang, Kyu-Seog; Jeon, Young-Sun; Lee, Young-Hwan; Hwangbo, Seung; Kim, Jin-Tae

    2015-10-01

    Intense red photoluminescence under ultraviolet excitation was observed in epitaxially-grown europium-doped perovskite BaTiO3 thin films deposited on the SrTiO3 (100), MgO (100) and sapphire (0001) substrates using metal carboxylate complexes. Precursor films prepared by spin coating were pyrolyzed at 250 °C for 120 min in argon, followed by final annealing at 850 °C for 60 min in argon. Crystallinity and epitaxy of the films were analyzed by X-ray diffraction θ-2θ scan and pole-figure analysis. Photoluminescence of the thin films at room temperature under 254 nm was confirmed by a fluorescent spectrophotometer. The obtained epitaxial BaTiO3 thin films on the SrTiO3 (100) and MgO (100) substrates show an intense red-emission lines at 615 nm corresponding to the (5)D0 --> (7)F2 transitions on Eu(3+) with broad bands at 595 and 650 nm. PMID:26726427

  14. Photoluminescence of localized excitons in ZnCdO thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Wu, T. Y.; Huang, Y. S.; Hu, S. Y.; Lee, Y. C.; Tiong, K. K.; Chang, C. C.; Shen, J. L.; Chou, W. C.

    2016-07-01

    We have investigated the luminescence characteristics of Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system. The temperature-dependent photoluminescence (PL) and excitation power-dependent PL spectra were measured to clarify the luminescence mechanisms of the Zn1-xCdxO thin films. The peak energy of the Zn1-xCdxO thin films with increasing the Cd concentration is observed as redshift and can be fitted by the quadratic function of alloy content. The broadened full-width at half-maximum (FWHM) estimated from the 15 K PL spectra as a function of Cd content shows a larger deviation between the experimental values and theoretical curve, which indicates that experimental FWHM values are affected not only by alloy compositional disorder but also by localized excitons occupying states in the tail of the density of states. The Urbach energy determined from an analysis of the lineshape of the low-energy side of the PL spectrum and the degree of localization effect estimated from the temperature-induced S-shaped PL peak position described an increasing mean exciton-localization effects in ZnCdO films with increasing the Cd content. In addition, the PL intensity and peak position as a function of excitation power are carried out to clarify the types of radiative recombination and the effects of localized exciton in the ZnCdO films with different Cd contents.

  15. Epitaxial composition-graded perovskite films grown by a dual-beam pulsed laser deposition method

    NASA Astrophysics Data System (ADS)

    Sakai, Joe; Autret-Lambert, Cécile; Sauvage, Thierry; Courtois, Blandine; Wolfman, Jérôme; Gervais, François

    2013-10-01

    We prepared SrTiO3 (STO) to Ba0.6Sr0.4TiO3 (BST06) out-of-plane composition-graded films on STO (100) substrates by means of a dual-beam dual-target pulsed laser deposition technique. In the deposition system, a sliding mirror divides one KrF excimer laser beam into two, realizing the dual-beam of controlled intensity ratio. X-ray diffraction reciprocal space mapping has revealed that the graded films deposited under oxygen pressure at or lower than 1×10-3 mbar were coherently strained with the same in-plane lattice parameter as the substrate. Their composition gradient along the growth direction was confirmed by Rutherford backscattering analysis to be uniform. We deposited BST06 top layers of various thickness on epitaxial composition-graded (ECG) buffer layers and examined their coherency and crystallinity. In comparison with the cases of STO homoepitaxial buffer layers, ECG buffer layers achieved better crystallinity of top BST06 layers, suggesting that the crystallinity of a heteroepitaxially-grown film is affected not only by the in-plane lattice matching but also by the out-of-plane lattice continuity with the substrate. ECG films that bridge compositions of substrate and top layer materials can be useful buffer layers for epitaxial growth of lattice-mismatched oxide films.

  16. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

    SciTech Connect

    Mynbaev, K. D.; Shilyaev, A. V. Bazhenov, N. L.; Izhnin, A. I.; Izhnin, I. I.; Mikhailov, N. N.; Varavin, V. S.; Dvoretsky, S. A.

    2015-03-15

    The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.

  17. The magnetic and chemical structural property of the epitaxially-grown multilayered thin film

    NASA Astrophysics Data System (ADS)

    Lee, Hwachol

    L10 FePt- and Fe-related alloys such as FePtRh, FeRh and FeRhPd have been studied for the high magnetocrystalline anisotropy and magnetic phase transition property for the future application. In this work, the thin film structural and magnetic property is investigated for the selected FePtRh and FeRhPd alloys. The compositionally-modulated L10 FePtRh multilayered structure is grown epitaxially on a-plane Al2O3 with Cr and Pt buffer layer at 600degC growth temperature by DC sputtering technique and examined for the structural, interfacial and magnetic property. For the epitaxially grown L10 [Fe50Pt45Rh5 (FM) (10nm) / Fe50Pt25Rh25 (AFM) (20nm)]x8 superlattice, the magnetically and chemically sharp interface formation between layers was observed in X-ray diffraction, transmission electron microscopy and polarized neutron reflectivity measurements with the negligible exchange bias at room and a slight coupling effect at lower temperature regime. For FeRhPd, the magnetic phase transition of epitaxially-grown 111-oriented Fe46Rh48Pd6 thin film is studied. The applied Rhodium buffer layer on a-plane Al2O3 (11 20) at 600degC shows the extraordinarily high quality of epitaxial film in (111) orientation, where two broad and coherent peak in rocking curve, and Laue oscillations are observed. The epitaxially-grown Pd-doped FeRh on Pt (111) grown at 600degC, 700degC exhibits the co-existing stable L10 (111) and B2 (110) structures and magnetic phase transition around 300degC. On the other hand, the partially-ordered FeRhPd structure grown at 400degC, 500degC shows background high ferromagnetic state over 5K˜350K temperature. For the reduced thickness of Fe46Rh48Pd 6, the ferromagnetic state becomes dominant with a reduced portion of the film undergoing a magnetic phase transition. For some epitaxial FeRhPd film, the spin-glass-like disordered state is also observed in field dependent SQUID measurement. For the tri-layered FeRhPd with thin Pt spacer, the background

  18. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

    SciTech Connect

    Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

    2014-09-30

    CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

  19. High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

    NASA Technical Reports Server (NTRS)

    Tang, S. M.; Berry, W. B.; Kwor, R.; Zeller, M. V.; Matus, L. G.

    1990-01-01

    Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

  20. Planar millimeter wave band-stop filters based on the excitation of confined magnetostatic waves in barium hexagonal ferrite thin film strips

    NASA Astrophysics Data System (ADS)

    Lu, Lei; Song, Young-Yeal; Bevivino, Joshua; Wu, Mingzhong

    2011-05-01

    A planar millimeter wave band-stop filter based on confined magnetostatic wave (MSW) excitations in an M-type barium hexagonal ferrite (BaM) film strip was demonstrated. The device consists of a BaM film strip on the top of a coplanar waveguide with the strip length along the signal line. For zero magnetic fields, the device shows a band-stop filtering response at 53 GHz. This response originates from the excitation of confined MSW modes across the BaM strip width. The filter operation frequency is tunable with low fields. This tuning relies on the change in the MSW dispersion with field.

  1. Lutetium-doped EuO films grown by molecular-beam epitaxy

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Hollaender, B.; Schubert, J.; Shen, K. M.; Mannhart, J.; Schlom, D. G.

    2012-05-28

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite non-magnetic carriers introduced by 5% lutetium doping.

  2. Resistive memory switching in ultrathin TiO2 films grown by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Sahu, V. K.; Misra, P.; Ajimsha, R. S.; Das, A. K.; Joshi, M. P.; Kukreja, L. M.

    2016-05-01

    Electric field controlled forming free and unipolar resistive memory switching was observed in Au/TiO2/Pt devices containing ultrathin TiO2 films of thickness ~ 4 nm grown by atomic layer deposition. These devices showed a large resistance ratio of ~ 103 between high and low resistance states along with appreciable time retention for ~ 104 seconds and endurance. The spread of reset and set voltages was from ~ 0.4-0.6 V and 1.1-1.5 V respectively with a clear window between them. The resistive switching mechanism was explained based on conductive filamentary model.

  3. Continuous spin reorientation transition in epitaxially grown antiferromagnetic NiO thin films

    SciTech Connect

    Li, J.; Arenholz, E.; Meng, Y.; Tan, A.; Park, J.; Jin, E.; Son, H.; Wu, J.; Jenkins, C. A.; Scholl, A.; Hwang, Chanyong; Qiu, Z. Q.

    2011-03-01

    Fe/NiO/MgO/Ag(001) films were grown epitaxially, and the Fe and NiO spin orientations were determined using x-ray magnetic dichroism. We find that the NiO spins are aligned perpendicularly to the in-plane Fe spins. Analyzing both the in-plane and out-of-plane spin components of the NiO layer, we demonstrate unambiguously that the antiferromagnetic NiO spins undergo a continuous spin reorientation transition from the in-plane to out-of-plane directions with increasing of the MgO thickness.

  4. Synthesis and characterization of TiO2 nanostructure thin films grown by thermal CVD

    NASA Astrophysics Data System (ADS)

    Rizal, Umesh; Das, Soham; Kumar, Dhruva; Swain, Bhabani S.; Swain, Bibhu P.

    2016-04-01

    Thermal Chemical Vapor Deposition (CVD) deposited Titanium dioxide nanostructures (TiO2-NSs) were grown by using Ti powder and O2 precursors on Si/SiO2 (100) substrate. The microstructure and vibration properties of TiO2-NSs were characterized by Fourier transform infrared (FTIR), SEM, and photoluminescence (PL) spectroscopy. The role of O2 flow rate on TiO2-NSs revealed decreased deposition rate, however, surface roughness has been increased resulted into formation of nanostructure thin films.

  5. Impedance analysis of different cell monolayers grown on gold-film electrodes.

    PubMed

    Reiss, Bjoern; Wegener, Joachim

    2015-08-01

    Impedance analysis of mammalian cells grown on planar film electrodes provides a label-free, non-invasive and unbiased observation of cell-based assays addressing the biological response to drugs, toxins or stressors in general. Whereas the time course of the measured impedance at one particular frequency has been used a lot for quantitative monitoring, in-depth analysis of the frequency-dependent impedance spectra is rarely performed. This study summarizes and validates the existing model for spectral analysis by applying it to eight different cell types from different mammalian tissues. Model parameters correctly predict the functional and/or structural properties of the individual cells under study. PMID:26737923

  6. Magnetic properties of MnAs thin films grown on GaAs (0 0 1) by MOVPE

    NASA Astrophysics Data System (ADS)

    Sterbinsky, G. E.; May, S. J.; Chiu, P. T.; Wessels, B. W.

    2007-01-01

    The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single α phase at room temperature with a B-type variant orientation. The coercive field of these films increases to a maximum for a film 35 nm thick and then decreases in thicker films. An increase in magnetic anisotropy field with increasing thickness is observed and is attributed to an increasing volume contribution to the anisotropy constant.

  7. Growth and structure of MBE grown TiO2 anatase films with rutile nano-crystallites

    SciTech Connect

    Shao, Rui; Wang, Chong M.; McCready, David E.; Droubay, Timothy C.; Chambers, Scott A.

    2007-03-15

    We have grown TiO2 anatase films with rutile nanocrystalline inclusions using molecular beam epitaxy under different growth conditions. This model system is important for investigating the role of rutile/anatase interfaces in heterogeneous photocatalysis. To control the film structure, we grew a pure anatase (001) layer at a slow rate and then increased the growth rate to drive the nucleation of rutile particles. Structure analysis indicates that the rutile phase has four preferred orientations in the anatase film.

  8. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.

    PubMed

    Kim, Tae-Youb; Huh, Chul; Park, Nae-Man; Choi, Cheol-Jong; Suemitsu, Maki

    2012-01-01

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. PMID:23171576

  9. Structural and optical characterization of MOCVD-grown ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pagni, O.; James, G. R.; Leitch, A. W. R.

    2004-03-01

    We report on the characterization of ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Substrate temperature proved to be a crucial factor in the crystallization process, as it vastly impacted the structural properties of the samples studied. Highly c-axis oriented films with large grain size (52 nm), low tensile strain (0.6%), uniform substrate coverage and a columnar structure devoid of hexagonal needles were successfully deposited on n-Si (100) substrates. The temperature-dependent luminescence spectra recorded confirmed the excellent quality of the material obtained in this work. Our results so far set TBOH apart as an outstanding oxygen source for the MOCVD growth of ZnO.

  10. Nanocolumnar association and domain formation in porous thin films grown by evaporation at oblique angles.

    PubMed

    Lopez-Santos, C; Alvarez, R; Garcia-Valenzuela, A; Rico, V; Loeffler, M; Gonzalez-Elipe, A R; Palmero, A

    2016-09-30

    Porous thin films grown at oblique angles by evaporation techniques are formed by tilted nanocolumnar structures which, depending on the material type and growth conditions, associate along certain preferential directions, giving rise to large domains. This arrangement, commonly denoted as bundling association, is investigated in the present work by performing fundamental experiments and growth simulations. It is proved that trapping processes of vapor species at the film surface, together with the shadowing mechanism, mediate the anisotropic widening of the nanocolumns and promote their preferential coalescence along certain directions, giving rise to domains with different shape and size. The role of these two processes is thoroughly studied in connection with the formation of these domains in materials as different as SiO2 and TiO2. PMID:27535651

  11. Raman spectra of MOCVD-grown ferroelectric PbTiO{sub 3} thin films

    SciTech Connect

    Feng, Z.C.; Kwak, B.S. |; Erbil, A.; Boatner, L.A.

    1993-12-31

    Lead titanate (PbTiO{sub 3}) has been grown on a variety of substrates by using the metalorganic chemical vapor deposition (MOCVD) technique. The substrates employed included Si, GaAs, MgO, fused-quartz, sapphire, and KTaO{sub 3}. Raman spectra from these heterostructures are presented. All of the films exhibited the strong, narrow spectral features characteristic of PbTiO{sub 3} perovskite-oxide crystals and indicative of high crystalline quality. The temperature behavior of the Raman modes, including the so-called ``soft-mode,`` was studied. A ``difference-Raman`` technique was used to distinguish the contributions of the PbTiO{sub 3} film and the KTaO{sub 3} single-crystal substrate.

  12. STM/STS study of graphene directly grown on h-BN films on Cu foils

    NASA Astrophysics Data System (ADS)

    Jang, Won-Jun; Wang, Min; Jang, Seong-Gyu; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Song, Young; Lee, Sungjoo; Sanit Collaboration; Department Of Physics, Korea University Collaboration; Graphene Research Center, Samsung Advanced Institute Of Technology Collaboration

    2013-03-01

    Graphene-based devices on standard SiO2 substrate commonly exhibit inferior characteristics relative to the expected intrinsic properties of graphene, due to the disorder existing at graphene-SiO2 interface. Recently, it has been shown that exfoliated and chemical vapor deposition (CVD) graphene transferred onto hexagonal boron nitride (h-BN) possesses significantly reduced charge inhomogeneity, and yields improved device performance. Here we report the scanning tunneling microscopy (STM) and spectroscopy (STS) results obtained from a graphene layer directly grown on h-BN insulating films on Cu foils. STS measurements illustrate that graphene/h-BN film is charge neutral without electronic perturbation from h-BN/Cu substrate. Corresponding Author

  13. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

    PubMed Central

    2012-01-01

    Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs. PMID:23171576

  14. Structural evolution of platinum thin films grown by atomic layer deposition

    SciTech Connect

    Geyer, Scott M.; Methaapanon, Rungthiwa; Bent, Stacey; Johnson, Richard; Clemens, Bruce; Brennan, Sean; Toney, Mike F.

    2014-08-14

    The structural properties of Pt films grown by atomic layer deposition (ALD) are investigated with synchrotron based x-ray scattering and x-ray diffraction techniques. Using grazing incidence small angle scattering, we measure the lateral growth rate of the Pt islands to be 1.0 Å/cycle. High resolution x-ray diffraction reveals that the in-plane strain of the Pt lattice undergoes a transition from compressive strain to tensile strain when the individual islands coalescence into a continuous film. This transition to tensile strain is attributed to the lateral expansion that occurs when neighboring islands merge to reduce their surface energy. Using 2D grazing incidence x-ray diffraction, we show that the lattice orientation becomes more (111) oriented during deposition, with a sharp transition occurring during coalescence. Pt ALD performed at a lower deposition temperature (250 °C) is shown to result in significantly more randomly oriented grains.

  15. Electrochemical delamination of CVD-grown graphene film: toward the recyclable use of copper catalyst.

    PubMed

    Wang, Yu; Zheng, Yi; Xu, Xiangfan; Dubuisson, Emilie; Bao, Qiaoliang; Lu, Jiong; Loh, Kian Ping

    2011-12-27

    The separation of chemical vapor deposited (CVD) graphene from the metallic catalyst it is grown on, followed by a subsequent transfer to a dielectric substrate, is currently the adopted method for device fabrication. Most transfer techniques use a chemical etching method to dissolve the metal catalysts, thus imposing high material cost in large-scale fabrication. Here, we demonstrate a highly efficient, nondestructive electrochemical route for the delamination of CVD graphene film from metal surfaces. The electrochemically delaminated graphene films are continuous over 95% of the surface and exhibit increasingly better electronic quality after several growth cycles on the reused copper catalyst, due to the suppression of quasi-periodical nanoripples induced by copper step edges. The electrochemical delamination process affords the advantages of high efficiency, low-cost recyclability, and minimal use of etching chemicals. PMID:22034835

  16. Nanoscale magnetization reversal caused by electric field-induced ion migration and redistribution in cobalt ferrite thin films.

    PubMed

    Chen, Xinxin; Zhu, Xiaojian; Xiao, Wen; Liu, Gang; Feng, Yuan Ping; Ding, Jun; Li, Run-Wei

    2015-04-28

    Reversible nanoscale magnetization reversal controlled merely by electric fields is still challenging at the moment. In this report, first-principles calculation indicates that electric field-induced magnetization reversal can be achieved by the appearance of unidirectional magnetic anisotropy along the (110) direction in Fe-deficient cobalt ferrite (CoFe(2-x)O4, CFO), as a result of the migration and local redistribution of the Co(2+) ions adjacent to the B-site Fe vacancies. In good agreement with the theoretical model, we experimentally observed that in the CFO thin films the nanoscale magnetization can be reversibly and nonvolatilely reversed at room temperature via an electrical ion-manipulation approach, wherein the application of electric fields with appropriate polarity and amplitude can modulate the size of magnetic domains with different magnetizations up to 70%. With the low power consumption (subpicojoule) characteristics and the elimination of external magnetic field, the observed electric field-induced magnetization reversal can be used for the construction of energy-efficient spintronic devices, e.g., low-power electric-write and magnetic-read memories. PMID:25794422

  17. SPM Study and Growth Mechanism of Graphene Directly CVD-Grown on h-BN Film

    NASA Astrophysics Data System (ADS)

    Song, Young Jae; Kim, Minwoo; Wu, Qinke; Lee, Joohyun; Lee, Sungjoo; Wang, Min

    2014-03-01

    We present our Scanning Tunneling Microscopy (STM)/Spectroscopy (STS) and Kelvin Probe Force Microscope (KPFM) study for graphene directly CVD-grown on h-BN film. High resolution STM image shows perfect honeycomb lattice structure of graphene on top surface and Moiré pattern indicating the structural interference patter with the underlying h-BN crystal. Non-disturbed electronic structure of graphene on h-BN film is also confirmed by spatially-resolved STS measurements, which show very sharp and symmetric V shape with a Dirac point at Fermi level. To confirm the graphene growth mechanism on h-BN film/Cu foil, careful Atomic Force Microscopy (AFM) and Kelvin Probe Force Microscopy (KPFM) measurements were performed on different thickness of h-BN film on a SiO2 substrate to unveil the catalytic origin of graphene growth on h-BN/Cu. This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (Grant Numbers: 2009-0083540, 2011-0030046, 2012R1A1A2020089 and 2012R1A1A1041416).

  18. Characterization of strontium barium niobate optical thin film grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Liu, H.; Li, S.; Fernandez, F. E.; Jia, W.; Liu, G.

    1999-12-01

    Optical quality thin films of strontium barium niobate SrxBa1-xNb2O6 either undoped or Eu3+-doped has been successfully grown on fused quartz substrates using pulsed laser deposition (PLD) technique. The optical properties were characterized in either time domain or in frequency domain. Undoped SBN thin films show a broad-band emission at UV, extending to the visible, which attributes to the exciton luminescence of the SBN host in the film. High-resolution nonlinear optical response in the picosecond region, as well as the third-order susceptibility were characterized by degenerate four-wave-mixing (DFWM) measurements. A considerable enhancement, by 2 orders of magnitude, of the third order nonlinear susceptibility χ(3) in transverse alignment was observed with respect to the bulk values. Eu3+-doped SBN films show a significant change in optical properties with annealing process. The fine structure of 5D0 to 7F multiplet emission was well resolved in the annealed sample. In a hole-burning experiment, a hole of width 100 MHz with depth as high as 30% was burnt using laser pumping at 5774 Å. It is suggested that Eu3+ ions may substitute Nb, occupying 6-fold sites.

  19. Characterization of strontium barium niobate optical thin film grown by pulsed laser deposition

    SciTech Connect

    Liu, H.; Fernandez, F. E.; Jia, W.; Li, S.; Liu, G.

    1999-12-02

    Optical quality thin films of strontium barium niobate Sr{sub x}Ba{sub 1-x}Nb{sub 2}O{sub 6} either undoped or Eu{sup 3+}-doped has been successfully grown on fused quartz substrates using pulsed laser deposition (PLD) technique. The optical properties were characterized in either time domain or in frequency domain. Undoped SBN thin films show a broad-band emission at UV, extending to the visible, which attributes to the exciton luminescence of the SBN host in the film. High-resolution nonlinear optical response in the picosecond region, as well as the third-order susceptibility were characterized by degenerate four-wave-mixing (DFWM) measurements. A considerable enhancement, by 2 orders of magnitude, of the third order nonlinear susceptibility {chi}{sup (3)} in transverse alignment was observed with respect to the bulk values. Eu{sup 3+}-doped SBN films show a significant change in optical properties with annealing process. The fine structure of {sup 5}D{sub 0} to {sup 7}F multiplet emission was well resolved in the annealed sample. In a hole-burning experiment, a hole of width 100 MHz with depth as high as 30% was burnt using laser pumping at 5774 A. It is suggested that Eu{sup 3+} ions may substitute Nb, occupying 6-fold sites.

  20. Rain erosion behavior of germanium carbide films grown on ZnS substrates

    NASA Astrophysics Data System (ADS)

    Mackowski, Jean-Marie; Cimma, B.; Pignard, R.; Colardelle, P.; Laprat, Patrice

    1992-12-01

    Thick germanium carbine films (GeC) are successfully grown on various Zinc Sulfide and Germanium substrates at temperatures up to 350 degree(s)C by two methods: Plasma Enhanced Chemical Vapor Deposition (PECVD) in gas mixtures of methane and germane and by Reactive Radio-Frequency Sputtering (RRFS) starting from a germanium target in a sputtering medium of methane and argon. The optical and mechanical properties of the GeC coatings depend on the composition determined by the deposition parameters. The refractive index at 633 nm varies from 4.9 to 4.3 for a carbon content ranging from 3 to 25% and the correlated refractive index in the 8 to 12 micrometers range is found to be between 3.96 and 3.1. For these coatings, the absorption coefficient is ranging from 270 to 40 cm-1. All films are amorphous in nature with domains ranging from 13 to 20 angstroms. The hydrogen content varies from 2 to 25% coming from C:H, Ge:H and C:Ge:H bonding. The XPS analysis shows the Ge:C precipitation kinetic for high deposition temperature or annealed films. The rain erosion resistance of GeC films and GeC with a protective diamond like-carbon (DLC) coating on top is measured for 1.2 mm water drop with an impact velocity ranging from 210 to 265 m/s on the Saab-Scania whirling-arm rig (Linkoping, Sweden).

  1. Induced polarized state in intentionally grown oxygen deficient KTaO{sub 3} thin films

    SciTech Connect

    Mota, D. A.; Romaguera-Barcelay, Y.; Tkach, A.; Agostinho Moreira, J.; Almeida, A.; Perez de la Cruz, J.; Vilarinho, P. M.; Tavares, P. B.

    2013-07-21

    Deliberately oxygen deficient potassium tantalate thin films were grown by RF magnetron sputtering on Si/SiO{sub 2}/Ti/Pt substrates. Once they were structurally characterized, the effect of oxygen vacancies on their electric properties was addressed by measuring leakage currents, dielectric constant, electric polarization, and thermally stimulated depolarization currents. By using K{sub 2}O rich KTaO{sub 3} targets and specific deposition conditions, KTaO{sub 3-{delta}} oxygen deficient thin films with a K/Ta = 1 ratio were obtained. Room temperature X-ray diffraction patterns show that KTaO{sub 3-{delta}} thin films are under a compressive strain of 2.3% relative to KTaO{sub 3} crystals. Leakage current results reveal the presence of a conductive mechanism, following the Poole-Frenkel formalism. Furthermore, dielectric, polarization, and depolarization current measurements yield the existence of a polarized state below T{sub pol} {approx} 367 Degree-Sign C. A Cole-Cole dipolar relaxation was also ascertained apparently due to oxygen vacancies induced dipoles. After thermal annealing the films in an oxygen atmosphere at a temperature above T{sub pol}, the aforementioned polarized state is suppressed, associated with a drastic oxygen vacancies reduction emerging from annealing process.

  2. Temperature dependence of mechanical stiffness and dissipation in ultrananocrystalline diamond films grown by the HFCVD techinque.

    SciTech Connect

    Adiga, V. P.; Sumant, A. V.; Suresh, S.; Gudeman, C.; Auciello, O.; Carlisle, J. A.; Carpick, R. W.; Materials Science Division; Univ. of Pennsylvania; Innovative Micro Tech.; Advanced Diamond Tech.

    2009-06-01

    We have characterized mechanical properties of ultrananocrystalline diamond (UNCD) thin films grown using the hot filament chemical vapor deposition (HFCVD) technique at 680 C, significantly lower than the conventional growth temperature of -800 C. The films have -4.3% sp{sup 2} content in the near-surface region as revealed by near edge x-ray absorption fine structure spectroscopy. The films, -1 {micro}m thick, exhibit a net residual compressive stress of 370 {+-} 1 MPa averaged over the entire 150 mm wafer. UNCD microcantilever resonator structures and overhanging ledges were fabricated using lithography, dry etching, and wet release techniques. Overhanging ledges of the films released from the substrate exhibited periodic undulations due to stress relaxation. This was used to determine a biaxial modulus of 838 {+-} 2 GPa. Resonant excitation and ring-down measurements in the kHz frequency range of the microcantilevers were conducted under ultrahigh vacuum (UHV) conditions in a customized UHV atomic force microscope system to determine Young's modulus as well as mechanical dissipation of cantilever structures at room temperature. Young's modulus is found to be 790 {+-} 30 GPa. Based on these measurements, Poisson's ratio is estimated to be 0.057 {+-} 0.038. The quality factors (Q) of these resonators ranged from 5000 to 16000. These Q values are lower than theoretically expected from the intrinsic properties of diamond. The results indicate that surface and bulk defects are the main contributors to the observed dissipation in UNCD resonators.

  3. Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

    NASA Astrophysics Data System (ADS)

    Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

    Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

  4. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2015-12-01

    Titanium doped tungsten oxide (Ti:WO3) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O2 atmosphere. Ti:WO3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10-3-5.0 × 10-3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm2) and tungsten (3 W/cm2) were kept constant. Ti:WO3 films deposited at an oxygen pressure of 5 × 10-3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm2/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: -22.01 mC/cm2, Qa: 17.72 mC/cm2), reversibility (80%) and methylene blue decomposition rate (-1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO3 films.

  5. Scaling behavior of ZnPc thin films grown on CuI interlayers

    NASA Astrophysics Data System (ADS)

    Lee, Jinho; Jin, Sung-Il; Park, Chan Ryang; Yim, Sanggyu

    2015-01-01

    The growth behavior and consequent surface morphology evolution of zinc phthalocyanine (ZnPc) thin films deposited on a CuI interlayer were studied using atomic force microscopy and height difference correlation function (HDCF) analysis. The planar phthalocyanine thin films grown on non-interacting substrates have previously been reported to show anomalous scaling behavior such as large growth exponents, ß, sometimes larger than 0.5, and small anomaly values, ρ, typically smaller than 0.6. In contrast, ZnPc thin films on a CuI interlayer (CuI/ ZnPc) in this work showed conventional scaling behavior with a ß value of 0.26 ± 0.05 and a ρ value of 0.91. The HDCF analyses and x-ray diffraction results indicate that the expected interdigitated electron donor-acceptor interface was hardly formed for the CuI/ZnPc thin film system due to the lack of surface-parallel crystallites with high step edge barriers.

  6. Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Sadananda Kumar, N.; Bangera, Kasturi V.; Shivakumar, G. K.

    2013-01-01

    Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450 °C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration.

  7. Spatial modulation of in-plane magnetic anisotropy in epitaxial Co(111) films grown on macrostep-bunched Si(111)

    SciTech Connect

    Davydenko, A. V. Kozlov, A. G.; Chebotkevich, L. A.

    2014-10-14

    We compared magnetic properties of epitaxial Co(111) films grown on microstep- and macrostep-bunched vicinal Si(111) substrates. A surface of the microstep-bunched Si(111) substrate represents regular array of step-bunches with height of 1.7 nm divided from each other by flat microterraces with a width of 34 nm. A surface of the macrostep-bunched Si(111) substrate is constituted by macrostep bunches with a height of 75–85 nm divided by atomically flat macroterraces. The average sum width of a macrostep bunch and a macroterrace is 2.3 μm. While in-plane magnetic anisotropy was spatially uniform in Co(111) films grown on the microstep-bunched Si(111), periodic macromodulation of the topography of the Si(111) substrate induced spatial modulation of in-plane magnetic anisotropy in Co(111) film grown on the macrostep-bunched Si(111) surface. The energy of uniaxial magnetic anisotropy in the areas of the Co(111) film deposited on the Si(111) macrosteps was higher more than by the order of magnitude than the energy of the magnetic anisotropy in the areas grown on macroterraces. Magnetization reversal in the areas with different energy of the magnetic anisotropy occurred in different magnetic fields. We showed the possibility of obtaining high density of domain walls in Co(111) film grown on the macrostep-bunched Si(111) by tuning the spatial step density of the Si(111) substrate.

  8. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

    DOE PAGESBeta

    A. J. Littlejohn; Zhang, L. H.; Lu, T. -M.; Kisslinger, K.; and Wang, G. -C.

    2016-03-15

    Ge1–xSnx films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge1–xSnx(111) films are grown on CaF2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the firstmore » report of (111) oriented Ge1–xSnx grown on a (100) oriented CaF2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.« less

  9. Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

    SciTech Connect

    Sahoo, Trilochan; Ju, Jin-Woo; Kannan, V.; Kim, Jin Soo; Yu, Yeon-Tae; Han, Myung-Soo; Park, Young-Sik; Lee, In-Hwan

    2008-03-04

    Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.

  10. Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

    NASA Astrophysics Data System (ADS)

    Patel, Sahil J.; Logan, John A.; Harrington, Sean D.; Schultz, Brian D.; Palmstrøm, Chris J.

    2016-02-01

    This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1×3) and c(2×2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1×3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.

  11. Extraordinarily large perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite Co{sub x}Fe{sub 3−x}O{sub 4}(001) (x = 0.75, 1.0) thin films

    SciTech Connect

    Niizeki, Tomohiko; Utsumi, Yuji; Aoyama, Ryohei; Yanagihara, Hideto; Inoue, Jun-ichiro; Kita, Eiji; Yamasaki, Yuichi; Nakao, Hironori; Koike, Kazuyuki

    2013-10-14

    Perpendicular magnetic anisotropy (PMA) of cobalt-ferrite Co{sub x}Fe{sub 3-x}O{sub 4} (x = 0.75 and 1.0) epitaxial thin films grown on MgO (001) by a reactive magnetron sputtering technique was investigated. The saturation magnetization was found to be 430 emu/cm{sup 3} for x = 0.75, which is comparable to that of bulk CoFe{sub 2}O{sub 4} (425 emu/cm{sup 3}). Torque measurements afforded PMA constants of K{sub u}{sup eff}=9.0 Merg/cm{sup 3} (K{sub u}=10.0 Merg/cm{sup 3}) and K{sub u}{sup eff}=9.7 Merg/cm{sup 3} for x = 0.75 and 1.0, respectively. The value of K{sub u}{sup eff} extrapolated using Miyajima's plot was as high as 14.7 Merg/cm{sup 3} for x = 1.0. The in-plane four-fold magnetic anisotropy was evaluated to be 1.6 Merg/cm{sup 3} for x = 0.75. X-ray diffraction measurement revealed our films to be pseudomorphically strained on MgO (001) with a Poisson ratio of 0.4, leading to a considerable in-plane tensile strain by which the extraordinarily large PMA could be accounted for.

  12. Structural and magnetic properties of epitaxial CrO2 thin films grown on TiO2 (001) substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Xueyu; Zhong, Xing; Visscher, P. B.; LeClair, Patrick R.; Gupta, Arunava

    2013-04-01

    The structural and magnetic properties of epitaxial CrO2 thin films grown on (001)-oriented TiO2 substrates by atmospheric pressure chemical vapor deposition are investigated. Due to the competition between demagnetization and a relatively weak perpendicular magnetocrystalline anisotropy, the deposited CrO2 (001) films exhibit magnetic properties that are significantly different from CrO2 (100) and CrO2 (110) films grown on TiO2 substrates. Based on the thickness dependence of M-H curves, a surface anisotropy is confirmed to exist, likely originating from strain in the film. The out-of-plane hysteresis curves can be well described by a distribution of effective anisotropy that may be due to a varying local demagnetizing field and a distribution of strain across the film. For the in-plane magnetization, the hysteresis curves are consistent with stripe or vortex domain structures of an almost closed flux configuration at remanence.

  13. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Chen, Zhi-Tao; Xu, Ke; Guo, Li-Ping; Yang, Zhi-Jian; Pan, Yao-Bo; Su, Yue-Yong; Zhang, Han; Shen, Bo; Zhang, Guo-Yi

    2006-05-01

    We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films is relaxed by generating edge-type threading dislocations (TDs) instead of screw-type TDs. Compared to as-grown GaN films, the annealed ones have larger mean twist angles corresponding to higher density of edge-type TDs but smaller mean tilt angles corresponding to lower density of screw-type TDs films. Due to the increased edge-type TD density, the lateral coherence lengths of the annealed GaN films also decrease. The results obtained from chemical etching experiment and grazing-incidence x-ray diffraction (GIXRD) also support the proposed structure evolution.

  14. Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Tseng, Ya Hsin; Yang, Chu Shou; Wu, Chia Hsing; Chiu, Jai Wei; Yang, Min De; Wu, Chih-Hung

    2013-09-01

    CuZnInSe2 (CZIS) has potential application in solar cell for absorption layer, and give an advantage to change the band gap from CuInSe2 (1.02 eV) to ZnSe (2.67 eV). Using molecular beam epitaxy technology, the CZIS thin films were grown via CuInSe (CIS) and ZnSe base. In the case of CIS, thin films were grown on Mo-coated soda lime glass with various zinc flux. CIS was transformed into chalcopyrite and sphalerite coexisting CZIS easily but it is difficult to transform into the pure sphalerite CZIS. Zn/(Zn+In+Cu) ratio has limited to approximate 36 at% and the excess-Zn played a catalyst role. In the case of ZnSe base, which was grown on GaAs (001), various In and Cu flux defined as the TIn series and TCu series, respectively. There are four types of compound in the TIn series and TCu series, including ZnSe, InxSey, ZnIn2Se4 (ZIS) and CZIS. In the TIn series under the lowest In and Cu flux, selenium (Se) were randomly combined with cations to form the CZIS. When TIn is increased in this moment, the CZIS was transformed into ZIS. In the TCu series, CZIS demonstrated via In-rich ZIS (Zn(In, Cu)Se) and InxSey base ((Zn, Cu)InSe). It is chalcopyrite and sphalerite coexisting structure in the medium TCu region. In the high TCu region, it is transformed into the Zn-poor and Cu-rich CZIS.

  15. Comparative study on the thickness-dependent properties of ITO and GZO thin films grown on glass and PET substrates

    NASA Astrophysics Data System (ADS)

    Kim, J. S.; Park, J.-K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T.-Y.

    2012-11-01

    The thickness-dependent properties of amorphous Sn-doped In2O3 (ITO) and polycrystalline Ga-doped ZnO (GZO) films grown on polyethylene terephthalate (PET) with a polymeric hard coating were compared with those deposited on Corning glass. The film thickness varied from 20 to 1310 nm. The electrical properties of the ITO films on PET were almost similar to those of the ITO films on glass. On the other hand, GZO films showed slightly poorer electrical properties when deposited on PET, but the difference was marginal. The electrical properties of amorphous ITO films were independent of film thickness, but polycrystalline GZO films exhibited monotonicallyimproving behavior with increasing thickness, mainly due to enhanced crystallinity and increased grain size with increasing film thickness. Although the air-referenced transmittance spectra of films on PET were about 2-3% lower than those on glass due to the lower transmittance of PET, the substrate-referenced optical transmittances of films on PET were higher than those on glass, reflecting the somewhat coarse structure of films on PET. Both the ITO and the GZO films on PET with a polymeric hard coating were shown to yield properties comparable to those oof both films on glass.

  16. A phase-field investigation of domain structures in ferroelectric bismuth ferrite thin films

    NASA Astrophysics Data System (ADS)

    Winchester, Benjamin

    The ferroelectric domain structure of multiferroic BiFeO3 thin films are strongly affected by the electrical boundary conditions. We employ a Ginzburg-Landau- Devonshire phase-field model to investigate the effects of the electrical boundary conditions on domain structure in BiFeO3 thin films. We examine the domain structure under short-circuit and under open-circuit boundary conditions with varying levels of compensation. As the degree of compensation changes, we find a smooth transition between the two types of domain structure. In the open-circuit case, we note small triangular nanodomains at the surface/wall interfaces that may be useful in nanoelectronic applications. The ferroelectric domain structures of epitaxial BiFeO3 thin films on miscut substrates were studied using a phase-field model. The effects of substrate vicinality towards are considered by assuming charge-compensated surface and film/substrate interface. The predicted domain structures show remarkable agreement with existing experimental observations, including domain wall orientations and local topological domain configurations. The roles of elastic, electric, and gradient energies on the domain structures were analyzed. It is shown that the substrate strain anisotropy due to the miscut largely determines the domain variant selection and domain configurations. We employ phase-field modeling to explore the elastic properties of artificiallycreated 1-D domain walls in (001)p-oriented BiFeO3 thin films. The walls are composed of a junction of the four polarization variants, all with the same out-of-plane polarization: a "vortex" is comprised of polarization variants rotating around the junction, and an "anti-vortex" is comprised of two polarization variants pointing towards the junction and two pointing away. It was found that these junctions exhibit peculiarly high electroelastic fields induced by the neighboring ferroelastic/ferroelectric domains. These fields may contribute to the segregation

  17. Oriented Y-type hexagonal ferrite thin films prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Buršík, J.; Kužel, R.; Knížek, K.; Drbohlav, I.

    2013-07-01

    Thin films of Ba2Zn2Fe12O22 (Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(1 1 1) (ST) single crystal substrates using epitaxial SrFe12O19 (M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into isolated grains with expressive shape anisotropy and hexagonal habit. The vital parameters of the seed layer, i.e. thickness, substrate coverage, crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. X-ray diffraction Pole figure measurements and Φ scans reveal perfect parallel in-plane alignment of SrTiO3 substrate and both hexaferrite phases.

  18. Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

    NASA Astrophysics Data System (ADS)

    Hojabri, Alireza

    2016-09-01

    Zirconium oxide thin films were grown successfully by thermal annealing of zirconium thin films deposited on quartz and silicon substrates by direct current magnetron sputtering technique. The structural and optical properties in relation to thermal annealing times were investigated. The X-ray diffraction patterns revealed that structure of films changes from amorphous to crystalline by increase of annealing times in range 60-240 min. The composition of films was determined by Rutherford back scattering spectroscopy. Atomic force microscopy results exhibited that surface morphology and roughness of films depend on the annealing time. The refractive index of the films was calculated using Swanepoel's method. The optical band gap energy of annealed films decreased from 5.50 to 5.34 eV with increasing thermal annealing time.

  19. Transparent conductive and near-infrared reflective Ga-doped ZnO/Cu bilayer films grown at room temperature

    SciTech Connect

    Lu, J. G.; Bie, X.; Wang, Y. P.; Gong, L.; Ye, Z. Z.

    2011-05-15

    Bilayer films consisting of Ga-doped ZnO (GZO) and Cu layers were grown at room temperature by magnetron sputtering. The structural, electrical, and optical properties of GZO/Cu bilayer films were investigated in detail. The crystallinity and transparent-conductive properties of the films were correlated with the Cu layer thickness. The GZO/Cu bilayer film with the Cu layer thickness of 7.8 nm exhibited a low resistivity of 7.6x10{sup -5} {Omega} cm and an average visible transmittance of 74%. The reflectance was up to 65% in the near-infrared region for this film. The transparent conductive and near-infrared reflective GZO/Cu bilayer films could be readily deposited at room temperature. The GZO/Cu bilayer films were thermally stable when annealed at temperatures as high as 500 deg. C.

  20. Self-generation of bright microwave magnetic envelope soliton trains in ferrite films through frequency filtering

    NASA Astrophysics Data System (ADS)

    Scott, Mark M.; Kalinikos, Boris A.; Patton, Carl E.

    2001-02-01

    Resonant ring feedback with frequency filtering has been used for the self-generation of bright soliton trains. The solitons were produced from magnetostatic backward volume spin waves propagated in an in-plane magnetized magnetic film delay line as part of the resonant ring structure. The amplitude and phase time profiles, together with the power spectra of the self-generated pulses, confirm their bright soliton nature.

  1. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Keen, B.; Makin, R.; Stampe, P. A.; Kennedy, R. J.; Sallis, S.; Piper, L. J.; McCombe, B.; Durbin, S. M.

    2014-04-01

    The alloying of bismuth with III-V semiconductors, in particular GaAs and InAs thin films grown by molecular beam epitaxy (MBE), has attracted considerable interest due to the accompanying changes in band structure and lattice constant. Specifically, bismuth incorporation in these compounds results in both a reduction in band gap (through shifting of the valence band) and an increase in the lattice constant of the alloy. To fully understand the composition of these alloys, a better understanding of the binary endpoints is needed. At present, a limited amount of literature exists on the III-Bi family of materials, most of which is theoretical work based on density functional theory calculations. The only III-Bi material known to exist (in bulk crystal form) is InBi, but its electrical properties have not been sufficiently studied and, to date, the material has not been fabricated as a thin film. We have successfully deposited crystalline InBi on (100) GaAs substrates using MBE. Wetting of the substrate is poor, and regions of varying composition exist across the substrate. To obtain InBi, the growth temperature had to be below 100 °C. It was found that film crystallinity improved with reduced Bi flux, into an In-rich regime. Additionally, attempts were made to grow AlBi and GaBi.

  2. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    NASA Astrophysics Data System (ADS)

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-12-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

  3. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.

    PubMed

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-01-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm(2) V(-1) s(-1), respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact. PMID:26658923

  4. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co2FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of -1.86 erg/cm2.

  5. Continuous and nanostructured TiO2 films grown by dc sputtering magnetron.

    PubMed

    Sánchez, O; Vergara, L; Font, A Climent; de Melo, O; Sanz, R; Hernández-Vélez, M

    2012-12-01

    The growth of Anatase nanostructured films using dc reactive magnetron sputtering and post-annealing treatment is reported. TiO2 has been deposited on Porous Anodic Alumina Films used as templates which were previously grown in phosphoric acid solution and etched to modify their pore diameters. This synthesis via results in the formation of vertically aligned and spatially ordered TiO2 nanostructures replicating the underlying template. Previously, the growth optimization of TiO2 thin films deposited by dc magnetron sputtering on flat silicon substrates was done. The crystalline structure and Ti in-depth concentration profile were determined by grazing incidence X-ray diffraction and Rutherford backscattering spectrometry, respectively. The surface morphology of the samples was explored by mean of a Field Emission Gun scanning electron microscope. Optical properties of the nanostructured samples were studied by using the reflectance spectra received in the UV-visible range. In these spectra different band gap values and complex light absorption features were observed. PMID:23447970

  6. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    PubMed Central

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-01-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100–300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900–2,500 cm2 V−1 s−1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact. PMID:26658923

  7. A kinetic model for stress generation in thin films grown from energetic vapor fluxes

    NASA Astrophysics Data System (ADS)

    Chason, E.; Karlson, M.; Colin, J. J.; Magnfält, D.; Sarakinos, K.; Abadias, G.

    2016-04-01

    We have developed a kinetic model for residual stress generation in thin films grown from energetic vapor fluxes, encountered, e.g., during sputter deposition. The new analytical model considers sub-surface point defects created by atomic peening, along with processes treated in already existing stress models for non-energetic deposition, i.e., thermally activated diffusion processes at the surface and the grain boundary. According to the new model, ballistically induced sub-surface defects can get incorporated as excess atoms at the grain boundary, remain trapped in the bulk, or annihilate at the free surface, resulting in a complex dependence of the steady-state stress on the grain size, the growth rate, as well as the energetics of the incoming particle flux. We compare calculations from the model with in situ stress measurements performed on a series of Mo films sputter-deposited at different conditions and having different grain sizes. The model is able to reproduce the observed increase of compressive stress with increasing growth rate, behavior that is the opposite of what is typically seen under non-energetic growth conditions. On a grander scale, this study is a step towards obtaining a comprehensive understanding of stress generation and evolution in vapor deposited polycrystalline thin films.

  8. Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

    NASA Astrophysics Data System (ADS)

    Okasaka, Shouta; Kubo, Osamu; Tamba, Daiki; Ohashi, Tomohiro; Tabata, Hiroshi; Katayama, Mitsuhiro

    2015-05-01

    Geometry and surface structure of a BaSi2(100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi2(100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi2(100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi2(100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi2(100) film grown on Si(111) is terminated by Si tetrahedra.

  9. Regular and chaotic dynamics of magnetization precession in ferrite-garnet films

    NASA Astrophysics Data System (ADS)

    Shutyĭ, Anatoliy M.; Sementsov, Dmitriy I.

    2009-03-01

    By numerically solving equations of motion and constructing the spectrum of Lyapunov exponents, nonlinear dynamics of uniformly precessing magnetization in (110) thin film structures with perpendicular magnetic bias is investigated over a wide frequency range of the alternating field. Bifurcational changes in magnetization precession and the states of dynamical bistability are discovered. Conditions for the realization of high-amplitude regular and chaotic dynamic regimes are revealed. The possibility of controlling those precession regimes by using external magnetic fields is shown. The features of time analogs of the Poincaré section of trajectories in the chaotic regimes are studied.

  10. Synthesis and characterization of hexagonal ferrite Sr1.8Sm0.2Co2Ni1.50Fe10.50O22/PST thin films for high frequency application

    NASA Astrophysics Data System (ADS)

    Ali, Irshad; Islam, M. U.; Ashiq, Muhammad Naeem; Asif Iqbal, M.; Karamat, Nazia; Azhar Khan, M.; Sadiq, Imran; Ijaz, Sana; Shakir, Imran

    2015-11-01

    Y-type hexagonal ferrite (Sr1.8Sm0.2Co2Ni1.50 Fe10.50O22) was prepared by a normal microemulsion route. The ferrite/polymer composites thin films are formed at different ferrite ratios in pure polystyrene matrix. The X-ray diffraction analysis shows broad peak at low angles which is due to the PST and the peaks for Y-type ferrite are also observed in composite samples. The peaks become more intense and show less broadening with increasing concentration of ferrite which suggests that crystallinity is improved with the addition of ferrite. DC resistivity of the composites samples is lower than that of the pure PST and decreases by increasing ferrite filler into the polymer. This decrease of resistivity is mainly due to the addition of comparatively less resistive ferrite into the highly insulating polymer matrix of PST. The observed increase in the dielectric constant (permittivity) with increasing concentration ratio of ferrites is mainly due to the electron exchange between Fe2+↔Fe3++e- which consequently results in enhancement of electric polarization as well as dielectric constant. The existence of resonances peaks in the dielectric loss tangent spectra is due to the fact when the external applied frequency becomes equal to the jumping frequency of electrons between Fe2+ and Fe3+. The increasing behavior of the dielectric constant, dielectric loss and AC conductivity with increasing ferrite ratio in PST matrix proposes their versatile use in different technological applications especially for electromagnetic shielding.

  11. Structural and Magnetic Phase Transitions in Manganese Arsenide Thin-Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Jaeckel, Felix Till

    Phase transitions play an important role in many fields of physics and engineering, and their study in bulk materials has a long tradition. Many of the experimental techniques involve measurements of thermodynamically extensive parameters. With the increasing technological importance of thin-film technology there is a pressing need to find new ways to study phase transitions at smaller length-scales, where the traditional methods are insufficient. In this regard, the phase transitions observed in thin-films of MnAs present interesting challenges. As a ferromagnetic material that can be grown epitaxially on a variety of technologically important substrates, MnAs is an interesting material for spintronics applications. In the bulk, the first order transition from the low temperature ferromagnetic alpha-phase to the beta-phase occurs at 313 K. The magnetic state of the beta-phase has remained controversial. A second order transition to the paramagnetic gamma-phase takes place at 398 K. In thin-films, the anisotropic strain imposed by the substrate leads to the interesting phenomenon of coexistence of alpha- and beta-phases in a regular array of stripes over an extended temperature range. In this dissertation these phase transitions are studied in films grown by molecular beam epitaxy on GaAs (001). The films are confirmed to be of high structural quality and almost purely in the A0 orientation. A diverse set of experimental techniques, germane to thin-film technology, is used to probe the properties of the film: Temperature-dependent X-ray diffraction and atomic-force microscopy (AFM), as well as magnetotransport give insights into the structural properties, while the anomalous Hall effect is used as a probe of magnetization during the phase transition. In addition, reflectance difference spectroscopy (RDS) is used as a sensitive probe of electronic structure. Inductively coupled plasma etching with BCl3 is demonstrated to be effective for patterning MnAs. We show

  12. Ordered 1,6-bis(2-hydroxyphenyl) pyridine boron complex films grown on Ag(110): From submonolayer to multilayer

    SciTech Connect

    Zhong, D.Y.; Lin, F.; Fuchs, H.; Chi, L.F.; Wang, Y.

    2005-03-15

    Ordered molecular films of a blue-light-emitting material, 1,6-bis(2-hydroxyphenyl) pyridine boron complex [(dppy)BF], grown on the Ag(110) surface by means of organic molecular beam epitaxy, were investigated by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) under an ultrahigh vacuum. Two commensurate structures exist in the monolayer film grown at 300 K, as found by STM. In the monolayer film, two types of hydrogen bonds are formed between the molecules, which, in addition to the molecule-substrate interaction, essentially determine the monolayer structures. The structural evolution of the (dppy)BF films from submonolayer to three monolayers was monitored by LEED in situ and in real time. The results indicate that the growth of the first two monolayers is affected by the periodic potential on the substrate surface, while such a template effect is weakened beyond the second monolayer.

  13. Nano-Crystalline Diamond Films with Pineapple-Like Morphology Grown by the DC Arcjet vapor Deposition Method

    NASA Astrophysics Data System (ADS)

    Li, Bin; Zhang, Qin-Jian; Shi, Yan-Chao; Li, Jia-Jun; Li, Hong; Lu, Fan-Xiu; Chen, Guang-Chao

    2014-08-01

    A nano-crystlline diamond film is grown by the dc arcjet chemical vapor deposition method. The film is characterized by scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD) and Raman spectra, respectively. The nanocrystalline grains are averagely with 80 nm in the size measured by XRD, and further proven by Raman and HRTEM. The observed novel morphology of the growth surface, pineapple-like morphology, is constructed by cubo-octahedral growth zones with a smooth faceted top surface and coarse side surfaces. The as-grown film possesses (100) dominant surface containing a little amorphous sp2 component, which is far different from the nano-crystalline film with the usual cauliflower-like morphology.

  14. Enhanced Carrier Generation in Nb-Doped SnO2 Thin Films Grown on Strain-Inducing Substrates

    NASA Astrophysics Data System (ADS)

    Nakao, Shoichiro; Yamada, Naoomi; Hirose, Yasushi; Hasegawa, Tetsuya

    2012-06-01

    We report the effect of lattice strain from the substrate on carrier generation in Nb-doped SnO2 (NTO) transparent conductive oxide (TCO) thin films. The carrier activation efficiency of Nb was strongly affected by in-plane tensile strain, and the NTO films grown on c-Al2O3 and anatase TiO2 seed layers had carrier density (ne) as high as 3×1020 cm-3. In contrast, strain-free NTO films grown on glass exhibited much smaller ne due to the formation of deep impurity levels. These results imply that NTO has potential as a practical TCO in the presence of substrate-film epitaxial interaction.

  15. As-grown Y-Ba-Cu-O thin films by reactive coevaporation with oxygen plasma cooling

    NASA Astrophysics Data System (ADS)

    Matsumoto, M.; Akoh, H.; Takada, S.

    1989-10-01

    We have developed a new fabrication process of as-grown Y-Ba-Cu-O thin films using a reactive coevaporation method specially with the rf-plasma cooling in the low oxygen pressure of 0.4 mTorr. By this O2 plasma cooling process, the transition temperature Tc is improved from 40 to 81 K for the film with a thickness of 1000 Å. The x-ray diffraction analysis shows that the activated oxygen species generated by the rf plasma make Y-Ba-Cu-O films oxidize sufficiently even in the low pressure of oxygen. In addition, we have studied the thickness dependence of Tc for as-grown films with various thicknesses of 60-2000 Å.

  16. As-grown Y-Ba-Cu-O thin films by reactive coevaporation with oxygen plasma cooling

    SciTech Connect

    Matsumoto, M.; Akoh, H.; Takada, S. )

    1989-10-15

    We have developed a new fabrication process of as-grown Y-Ba-Cu-O thin films using a reactive coevaporation method specially with the rf-plasma cooling in the low oxygen pressure of 0.4 mTorr. By this O{sub 2} plasma cooling process, the transition temperature {ital T}{sub {ital c}} is improved from 40 to 81 K for the film with a thickness of 1000 A. The x-ray diffraction analysis shows that the activated oxygen species generated by the rf plasma make Y-Ba-Cu-O films oxidize sufficiently even in the low pressure of oxygen. In addition, we have studied the thickness dependence of {ital T}{sub {ital c}} for as-grown films with various thicknesses of 60--2000 A.

  17. Ultrafast structural dynamics of LaVO3 thin films grown by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Brahlek, Matthew; Lapano, Jason; Stoica, Vladimir; Zhang, Lei; Zhang, Hai-Tian; Akamatsu, Hirofumi; Eaton, Craig; Gopalan, Venkatraman; Freeland, John; Wen, Haidan; Engel-Herbert, Roman

    LaVO3, with a partially full d-shell is expected to be metallic, but due to electron-electron interactions a gap emerges and the ground state is a Mott insulator. Such effects are a strong function of the bonding geometry, and particularly the V-O-V bond angle. Controlling these structural effects on the ultrafast time scale can lead to control over the underlying electronic ground state. Here we report the ultrafast structural dynamics of 25 and 50 nm thick LaVO3 thin films grown by the hybrid molecular beam epitaxy technique on SrTiO3 when excited across the bandgap by 800 nm light. Using time-resolved x-ray diffraction on the 100 ps time scale at Sector 7 of the Advanced Photon Source, we directly measured the structural changes with atomic accuracy by monitoring integer Bragg diffraction peaks and find a large out-of-plane strain of 0.18% upon optical excitation; the recovery time is ~1 ns for the 25 nm film and ~2 ns for the 50 nm film, consistent with the thermal transport from the film to the substrate. Further, we will discuss the response of the oxygen octahedral rotation patterns indicated by changes of the half-order diffraction peaks. Understanding such ultrafast structural deformation is important for optimizing optical excitations to create new metastable phases starting from a Mott insulator. This work was supported by the Department of Energy under Grant DE-SC0012375, and DE-AC02-06CH11357.

  18. Hardness and Young's modulus of high-quality cubic boron nitride films grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jiang, X.; Philip, J.; Zhang, W. J.; Hess, P.; Matsumoto, S.

    2003-02-01

    The elastic and mechanical properties of high-quality cubic boron nitride (cBN) films with a few microns thickness and submicron grain size grown on silicon substrates by chemical vapor deposition were determined by measuring the dispersion of surface acoustic waves propagating along the surface of the layered system. The values are compared with those obtained with an ultralow load indenter (Triboscope). Specifically, the hardness, Young's modulus and density of the film were measured.

  19. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    SciTech Connect

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-11-26

    We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  20. Biomass yield and composition of sweetpotato grown in a nutrient film technique system.

    PubMed

    Almazan, A M; Zhou, X

    1997-01-01

    Sweetpotato cultivar TU-82-155 grown in a nutrient film technique system and separated into foliage, tips, fibrous, string and storage roots at harvest had a total dry biomass of 89.9 g per plant with 38.4% inedible portion. Tips and storage roots, the traditional edible parts, were analyzed for dry matter, protein, fat, ash, minerals (Ca, Fe, K, Mg, Na, Zn), vitamins (carotene, ascorbic acid, thiamin), oxalic and tannic acids, and trypsin and chymotrypsin inhibitors to determine their nutritional quality. Water soluble matter, minerals (Ca, Fe, K, Mg, Na, Zn), cellulose, hemicellulose and lignin concentrations in the edible and inedible parts were obtained to provide information needed for the selection of appropriate bioconversion processes of plant wastes into food or forms suitable for crop production in a controlled biological life support system. PMID:9373876

  1. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    NASA Astrophysics Data System (ADS)

    Li, Wei; Varlamov, Sergey; Xue, Chaowei

    2014-09-01

    This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, Voc and Jsc than the one on the seed layer without RTA treatment.

  2. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  3. Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

    PubMed Central

    Jung, Chulseung; Kim, Seung Min; Moon, Hyunseong; Han, Gyuchull; Kwon, Junyeon; Hong, Young Ki; Omkaram, Inturu; Yoon, Youngki; Kim, Sunkook; Park, Jozeph

    2015-01-01

    Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications. PMID:26477744

  4. Properties of MgB2 films grown at various temperatures by hybrid physical chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Chen, Ke; Veldhorst, Menno; Lee, Che-Hui; Lamborn, Daniel R.; DeFrain, Raymond; Redwing, Joan M.; Li, Qi; Xi, X. X.

    2008-09-01

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 °C with a Tc0 of 35.5 K. MgB2 films up to 4 µm in thickness grown at 550 °C have Jc over 106 A cm-2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.

  5. Synthesis of nanocrystalline Cu2ZnSnS4 thin films grown by the spray-pyrolysis technique

    NASA Astrophysics Data System (ADS)

    Chandel, Tarun; Singh, Joginder; Rajaram, P.

    2015-08-01

    Spray pyrolysis was used to deposit Cu2ZnSnS4 (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  6. Reversible Change in Electrical and Optical Properties in Epitaxially Grown Al-Doped ZnO Thin Films

    SciTech Connect

    Noh, J. H.; Jung, H. S.; Lee, J. K.; Kim, J. Y; Cho, C. M.; An, J.; Hong, K. S.

    2008-01-01

    Aluminum-doped ZnO (AZO) films were epitaxially grown on sapphire (0001) substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01 x 10{sup -4} {Omega} cm. However, after annealing at 450 C in air, the electrical resistivity of the AZO films increased to 1.97 x 10{sup -1} {Omega} cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H{sub 2} recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H{sub 2} annealing. A photoluminescence study showed that oxygen interstitial (O{sub i}) is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

  7. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    NASA Astrophysics Data System (ADS)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  8. The finite size effect on the metal-insulator transition of MOCVD grown VO{sub 2} films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  9. The finite size effect on the metal-insulator transition of MOCVD grown VO sub 2 films

    SciTech Connect

    Kim, Hyung Kook; Chiarello, R.P.; You, Hoydoo; Chang, M.H.L.; Zhang, T.J.; Lam, D.J.

    1991-11-01

    We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO{sub 2} films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO{sub 2} films with out-of-plane particle size ranging from 60--310 {Angstrom}. Each Vo{sub 2} film was grown on a thin TiO{sub 2} buffer layer, which in turn was grown by MOCVD on a polished sapphire (112) substrate. The transition was found to be first order. As the out-of-plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60{Angstrom} film the transition was observed at {approximately}61{degrees}C with a transition width if {approximately}10{degrees}C, while for the 310{Angstrom} film the transition temperature was {approximately}59{degrees}C and the transition width {approximately} 2{degree}C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

  10. Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates

    NASA Astrophysics Data System (ADS)

    Samanta, S. K.; Chatterjee, S.; Maikap, S.; Bera, L. K.; Banerjee, H. D.; Maiti, C. K.

    2003-03-01

    The role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films has been studied using constraint theory. Ultrathin (<3 nm) oxynitride films were grown using N2O followed by N2 annealing on strained Si0.82Ge0.18 layers. Silicon dioxide films grown on strained Si0.82Ge0.18 layers were also nitrided in N2O by rapid thermal processing. The nitrogen distribution in the oxynitride films was investigated by time-of-flight secondary ion mass spectrometry. The interface state density, charge trapping properties, and interface state generation with constant current and voltage stressing were studied. It is observed that dielectric films grown in N2O ambient and subsequently annealed in N2 have excellent electrical properties. A low stress-induced leakage current and a high time dependent dielectric breakdown are also observed in these films. Improvements in the electrical properties are shown to be due to the creation of a large number of strong Si-N bonds both in bulk and in the SiON-Si1-xGex interface region of the dielectric.