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  1. Astronomical imaging with InSb arrays

    NASA Astrophysics Data System (ADS)

    Pipher, Judith L.

    Ten years ago, Forrest presented the first astronomical images with a Santa Barbara Research Center (SBRC) 32 x 32 InSb array camera at the first NASA-Ames Infrared Detector Technology Work-shop. Soon after, SBRC began development of 58 x 62 InSb arrays, both for ground-based astronomy and for the Space Infrared Telescope Facility (SIRTF). By the time of the 1987 Hilo workshop 'Ground-based Astronomical Observations with Infrared Array Dectectors' astronomical results from cameras based on SBRC 32 x 32 and 58 x 62 InSb arrays, a CE linear InSb array, and a French 32 x 32 InSb charge injection device (CID) array were presented. And at the Tucson 1990 meeting 'Astrophysics with Infrared Arrays', it was clear that this new technology was no longer the province of 'IR pundits', but provided a tool for all astronomers. At this meeting, the first astronomical observations with SBRC's new, gateless passivation 256 x 256 InSb arrays will be presented: they perform spectacularly] In this review, I can only broadly brush on the interesting science completed with InSb array cameras. Because of the broad wavelength coverage (1-5.5 micrometer) of InSb, and the extremely high performance levels throughout the band, InSb cameras are used not only in the near IR, but also from 3-5.5 micrometer, where unique science is achieved. For example, the point-like central engines of active galactic nuclei (AGN) are delineated at L' and M', and Bra and 3.29 micrometer dust emission images of galactic and extragalactic objects yield excitation conditions. Examples of imaging spectroscopy, high spatial resolution imaging, as well as deep, broad-band imaging with InSb cameras at this meeting illustrate the power of InSb array cameras.

  2. Numerical analysis of InSb parameters and InSb 2D infrared focal plane arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaolei; Zhang, Hongfei; Sun, Weiguo; Zhang, Lei; Meng, Chao; Lu, Zhengxiong

    2012-10-01

    Accurate and reliable numerical simulation tools are necessary for the development of advanced semiconductor devices. InSb is using the MATLAB and TCAD simulation tool to calculatet the InSb body bandstructure, blackbody's radiant emittance and simultaneously solve the Poisson, Continuity and transport equations for 2D detector structures. In this work the material complexities of InSb, such as non-parabolicity, degenergcy, mobility and Auger recombination/generation are explained, and physics based models are developed. The Empirical Tight Binding Method (ETBM) was been using to calculate the bandstructure for InSb at 77 K by Matlab. We describe a set of systematic experiments performed in order to calibrate the simulation to semiconductor devices backside illuminated InSb focal plane arrays realized with planar technology. The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied.

  3. InSb DRO array characteristics

    NASA Technical Reports Server (NTRS)

    Forrest, W. J.; Pipher, J. L.; Ninkov, Z.; Garnett, J. D.

    1989-01-01

    Researchers tested 58 x 62 low-doped InSb diode arrays bonded to MOSFET readouts for their performance potential in a low background space environment. Of primary concern were the quantum efficiency, dark current and read noise. The quantum efficiency (45 percent at 3.3 microns) and dark current (less than 2.4e(-)/s) were found to be adequate for the Space Infrared Telescope Facility (SIRTF) experiments, while the read noise (200 e(-) RMS) was found to be wanting. More subtle concerns, such as image quality, linearity/calibratibility and flat fielding were also investigated. In these respects the arrays appear to be well suited for the high sensitivity, photometric accuracy, and image clarity demanded by the SIRTF experiments.

  4. Characterization of midwave infrared InSb avalanche photodiode

    SciTech Connect

    Abautret, J. Evirgen, A.; Perez, J. P.; Christol, P.; Rothman, J.; Cordat, A.

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  5. InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  6. InSb thin films grown by electrodeposition

    NASA Astrophysics Data System (ADS)

    Singh, Joginder; Rajaram, P.

    2014-04-01

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl3 and 0.03M SbCl3, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm-1 corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  7. Megapixel digital InSb detector for midwave infrared imaging

    NASA Astrophysics Data System (ADS)

    Shkedy, Lior; Markovitz, Tuvy; Calahorra, Zipi; Hirsh, Itay; Shtrichman, Itay

    2011-06-01

    Since the late 1990s Semiconductor devices (SCDs) has developed and manufactured a variety of InSb two-dimensional (2D) focal plane arrays (FPAs) that were implemented in many infrared (IR) systems and applications. SCD routinely manufactures both analog and digital InSb FPAs with array formats of 320×256, 480×384, and 640×512 elements, and pitch size in the range 15 to 30 μm. These FPAs are available in many packaging configurations, including fully integrated detector-Dewar-cooler-assembly, with either closed-cycle Stirling or open-loop Joule-Thomson coolers. In response to a need for very high resolution midwave IR (MWIR) detectors and systems, SCD has developed a large format 2D InSb detector with 1280×1024 elements and pixel size of 15 μm. A digital readout integrated circuit (ROIC) is coupled by flip-chip bonding to the megapixel InSb array. The ROIC is fabricated in CMOS 0.18-μm technology, that enables the small pixel circuitry and relatively low power generation at the focal plane. The digital ROIC has an analog to digital (A/D) converter per-channel and allows for full frame readout at a rate of 100 Hz. Such on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The digital readout, together with the InSb detector technology, lead to a wide linear dynamic range and low residual nonuniformity, which is stable over a long period of time following a nonuniformity correction procedure. A special Dewar was designed to withstand harsh environmental conditions while minimizing the contribution to the heat load of the detector. The Dewar together with the low power ROIC, enable a megapixel detector with overall low size, weight, and power with respect to comparable large format detectors. A variety of applications with this detector make use of different cold shields with different f-number and spectral filters. In this paper we present actual performance characteristics of the

  8. Super-Hard induced gap in InSb nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Jun; Yu, Peng; Hocevar, Moïra; Plissard, Sébastien; Car, Diana; Bakkers, Erik; Frolov, Sergey

    In recent years, Majorana bound states were observed experimentally in InSb nanowire-superconductor hybrid devices, which manifested themselves as a zero-bias conductance peak (ZBP). However, there was still significant conductance inside the superconducting gap, which would smear sub-gap features. Moreover, fermionic states inside the gap would also break topological protection. Therefore, a hard gap is required in search of more deterministic signatures of Majorana bound states, and building up Majorana qubits. We report the observation of a hard induced gap in an InSb Josephson junction with an optimized superconducting contact recipe. The gap is resolved in magnetic field up to 2 Tesla, and demonstrates a peculiar kinked field dependence. In addition, we observed rich sub-gap features: Andreev levels appeared close to pinch off regime, while multiple Andreev reflection appeared in open regime.

  9. Ballistic transport in InSb Josephson junctions

    NASA Astrophysics Data System (ADS)

    Damasco, John Jeffrey; Gill, Stephen; Car, Diana; Bakkers, Erik; Mason, Nadya

    We present transport measurements on Josephson junctions consisting of InSb nanowires contacted by Al at various junction lengths. Junction behavior as a function of gate voltage, electric field, and magnetic field is discussed. We show that short junctions behave as 1D quantum wires, exhibiting quantized conductance steps. In addition, we show how Josephson behavior changes as transport evolves from ballistic to diffusive as a function of contact spacing.

  10. Optimizing indium antimonide (InSb) detectors for low background operation. [infrared astronomy

    NASA Technical Reports Server (NTRS)

    Treffers, R. R.

    1978-01-01

    The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.

  11. InSb charge coupled infrared imaging device: The 20 element linear imager

    NASA Technical Reports Server (NTRS)

    Thom, R. D.; Koch, T. L.; Parrish, W. J.; Langan, J. D.; Chase, S. C.

    1980-01-01

    The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

  12. Ab initio calculation of the thermodynamic properties of InSb under intense laser irradiation

    SciTech Connect

    Feng, ShiQuan; Cheng, XinLu; Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu, 610064 ; Zhao, JianLing; Zhang, Hong

    2013-07-28

    In this paper, phonon spectra of InSb at different electronic temperatures are presented. Based on the phonon dispersion relationship, we further perform a theoretical investigation of the thermodynamic properties of InSb under intense laser irradiation. The phonon entropy, phonon heat capacity, and phonon contribution to Helmholtz free energy and internal energy of InSb are calculated as functions of temperature at different electronic temperatures. The abrupt change in the phonon entropy- temperature curve from T{sub e} = 0.75 to 1.0 eV provides an indication of InSb undergoing a phase transition from solid to liquid. It can be considered as a collateral evidence of non-thermal melting for InSb under intense electronic excitation effect.

  13. Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoling; Meng, Qingduan; Zhang, Liwen; Lv, Yanqiu

    2014-03-01

    A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young's modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.

  14. Nonlinear THz absorption and cyclotron resonance in InSb

    NASA Astrophysics Data System (ADS)

    Heffernan, Kate; Yu, Shukai; Talbayev, Diyar

    The emergence of coherent high-field terahertz (THz) sources in the past decade has allowed the exploration of nonlinear light-matter interaction at THz frequencies. Nonlinear THz response of free electrons in semiconductors has received a great deal of attention. Such nonlinear phenomena as saturable absorption and self-phase modulation have been reported. InSb is a narrow-gap (bandgap 0.17 eV) semiconductor with a very low electron effective mass and high electron mobility. Previous high-field THz work on InSb reported the observation of ultrafast electron cascades via impact ionization. We study the transmission of an intense THz electric field pulse by an InSb wafer at different incident THz amplitudes and 10 K temperature. Contrary to previous reports, we observe an increased transmission at higher THz field. Our observation appears similar to the saturable THz absorption reported in other semiconductors. Along with the increased absorption, we observe a strong modulation of the THz phase at high incident fields, most likely due to the self-phase modulation of the THz pulse. We also study the dependence of the cyclotron resonance on the incident THz field amplitude. The cyclotron resonance exhibits a lower strength and frequency at the higher incident THz field. The work at Tulane was supported by the Louisiana Board of Regents through the Board of Regents Support Fund Contract No. LEQSF(2012-15)-RD-A-23 and through the Pilot Funding for New Research (PFund) Contract No. LEQSF-EPS(2014)-PFUND-378.

  15. Measurements of light absorption efficiency in InSb nanowires

    PubMed Central

    Jurgilaitis, A.; Enquist, H.; Harb, M.; Dick, K. A.; Borg, B. M.; Nüske, R.; Wernersson, L.-E.; Larsson, J.

    2013-01-01

    We report on measurements of the light absorption efficiency of InSb nanowires. The absorbed 70 fs light pulse generates carriers, which equilibrate with the lattice via electron-phonon coupling. The increase in lattice temperature is manifested as a strain that can be measured with X-ray diffraction. The diffracted X-ray signal from the excited sample was measured using a streak camera. The amount of absorbed light was deduced by comparing X-ray diffraction measurements with simulations. It was found that 3.0(6)% of the radiation incident on the sample was absorbed by the nanowires, which cover 2.5% of the sample. PMID:26913673

  16. Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

    PubMed

    Pan, D; Fan, D X; Kang, N; Zhi, J H; Yu, X Z; Xu, H Q; Zhao, J H

    2016-02-10

    Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana Fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here, we report on a new route toward growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ∼10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes toward the development of InSb-based devices for applications in nanoelectronics, optoelectronics, and quantum electronics and for the study of fundamental physical phenomena. PMID:26788662

  17. Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix

    SciTech Connect

    Chen Dongliang; Fan Jiangwei; Wei Shiqiang; Li Chaosheng; Zhu Zhengang

    2005-08-15

    The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

  18. Spectral Power and Irradiance Responsivity Calibration of InSb Working-Standard Radiometers.

    PubMed

    Eppeldauer, G; Rácz, M

    2000-11-01

    New, improved-performance InSb power-irradiance meters have been developed and characterized to maintain the National Institute of Standards and Technology (NIST) spectral responsivity scale between 2 and 5.1 mum. The InSb radiometers were calibrated against the transfer-standard cryogenic bolometer that is tied to the primary-standard cryogenic radiometer of the NIST. The InSb radiometers serve as easy-to-use working standards for routine spectral power and irradiance responsivity calibrations. The spectral irradiance responsivities were derived from the spectral power responsivities by use of the measured area of the apertures in front of the InSb detectors. PMID:18354571

  19. Exciton Dynamics in InSb Colloidal Quantum Dots.

    PubMed

    Sills, Andrew; Harrison, Paul; Califano, Marco

    2016-01-01

    Extraordinarily fast biexciton decay times and unexpectedly large optical gaps are two striking features observed in InSb colloidal quantum dots that have remained so far unexplained. The former, should its origin be identified as an Auger recombination process, would have important implications regarding carrier multiplication efficiency, suggesting these nanostructures as potentially ideal active materials in photovoltaic devices. The latter could offer new insights into the factors that influence the electronic structure and consequently the optical properties of systems with reduced dimensionality and provide additional means to fine-tune them. Using the state-of-the-art atomistic semiempirical pseudopotential method we unveil the surprising origins of these features and show that a comprehensive explanation for these properties requires delving deep into the atomistic detail of these nanostructures and is, therefore, outside the reach of less sophisticated, albeit more popular, theoretical approaches. PMID:26650516

  20. Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

    NASA Astrophysics Data System (ADS)

    Sun, Weiguo; Fan, Huitao; Peng, Zhenyu; Zhang, Liang; Zhang, Xiaolei; Zhang, Lei; Lu, Zhengxiong; Si, Junjie; Emelyanov, E.; Putyato, M.; Semyagin, B.; Pchelyakov, O.; Preobrazhenskii, V.

    2014-01-01

    Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2° towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of МВЕ-formed epitaxial InSb were demonstrated. Zero-bias resistance area product (R0A) measurements were taken at 80 K under room temperature background for a pixel size of 100 μm × 100 μm. Values were as high as 4.36 × 104 Ω/cm2, and the average value of R0A was 1.66 × 104 Ω/cm2. The peak response was 2.44 (A/W). The epitaxial InSb photodiodes were fabricated using the same process as bulk crystal InSb diodes with the exception of the junction formation method. These values are comparable to the properties of bulk crystal InSb photodiodes.

  1. Growth of InSb and InAs(1-x)Sb(x) by OM-CVD

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Bedair, S. M.

    1984-01-01

    Organometallic chemical vapor deposition (OM-CVD) growth of InSb and InAs(1-x)Sb(x) has been obtained using triethylindium (TEI), trimethylantimony (TMS), and arsine (AsH3) on (100) GaAs, (100) InSb, and (111)-B InSb substrates. InSb with excellent morphology was achieved on both (100) InSb and (111)-B InSb substrates. The measured electron mobility at 300 K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 sq cm/V-s at a carrier concentration of ND-NA = 2.0 x 10 to the 16th per cu cm. Carrier concentration of ND-NA = 1.2 x 10 to the 15th per cu cm has been measured at 77 K. InAs(1-x)Sb(x) (x = 0.07-0.75) with mirror-like surfaces have been grown on (100) InSb and InAs substrates. This composition range of x between 0.55 and 0.75 (Eg = 0.1 eV) has been successfully achieved for the first time. Solid composition variations as a function of growth temperature and InSb substrate orientations are also discussed.

  2. Pelican: SCD's 640 × 512/15 μm pitch InSb detector

    NASA Astrophysics Data System (ADS)

    Oiknine Schlesinger, J.; Calahorra, Z.; Uri, E.; Shick, O.; Fishman, T.; Shtrichman, I.; Sinbar, E.; Nahum, V.; Kahanov, E.; Shlomovich, B.; Hasson, S.; Fishler, N.; Chen, D.; Markovitz, T.

    2007-04-01

    Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), that are currently used in different applications worldwide. SCD's production line includes InSb FPAs with mid format (320x256 elements), and large format (640x512 elements), all available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA). Many of SCD's products are fully customized for customers' needs, and are optimized for each application with respect to the weight, power, size, and performance. In 2006, SCD has added to its broad InSb product portfolio the new "Pelican" detector family. All Pelican detectors include a large format 640×512 InSb FPA with 15μm pitch, which is based on the FLIR/Indigo ISC0403 Readout Integrated Circuit (ROIC). Due to its small size, the Pelican FPA fits in any mid format Dewar, enabling upgrading of mid format systems with higher spatial resolution due to its good MTF. This work presents the high performance of Pelican products. As achieved in all SCD's InSb DDC's, the Pelican detectors demonstrate high uniformity and correctability (residual non uniformity less than 0.05% std/DR) and remarkable operability (typically better than 99.9%). The Pelican FPA can be integrated in various DDCA configurations as per application needs, such as light weight, low power and compact form for hand held imagers, or a rigid configuration for environmentally demanding operating and storage conditions.

  3. Resonant Terahertz InSb Waveguide Device for Sensing Polymers

    NASA Astrophysics Data System (ADS)

    Bhatt, Shourie Ranjana J.; Bhatt, Piyush; Deshmukh, Prathmesh; Sangala, Bagvanth R.; Satyanarayan, M. N.; Umesh, G.; Prabhu, S. S.

    2016-08-01

    We have demonstrated the possibility of employing a device, designed to operate at terahertz (THz) frequencies, for sensing materials. The device consists of a waveguide section with a pair of stubs located at the middle and oriented transversely to the waveguide axis. The two stubs function as a resonator and, hence, the device would behave as a filter in the THz domain. The device was fabricated by laser micromachining of InSb pellets and was characterized by THz time-domain transmission spectroscopy. For a waveguide width of 740 μm and stub length of 990 μm, a transmission minimum is seen to occur at 0.265 THz. We investigated the capability of the device to sense polystyrene, dissolved in toluene, loaded into the stubs. The consequent change in the refractive index in the stubs alters the transmitted signal intensity. Our results show that, a change in concentration of polystyrene even by 1 mol/L, leads to measurable change in the transmission coefficient close to the resonant frequency of the device. Thus, our device operating at THz frequencies shows promising potential as chemical and bio sensors.

  4. Optical design of a mid-wavelength infrared InSb nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Azizur-Rahman, K. M.; LaPierre, R. R.

    2016-08-01

    A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3–5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined.

  5. Optical design of a mid-wavelength infrared InSb nanowire photodetector.

    PubMed

    Azizur-Rahman, K M; LaPierre, R R

    2016-08-01

    A periodic array of vertical InSb nanowires (nws) was designed for photodetectors in the mid-wavelength infrared (MWIR) region (λ = 3-5 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (diameter (D), period (P), and length (L)) for high optical absorptance, which exceeded that of a thin film of equal thickness. Our results showed HE1n resonances in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector is examined. PMID:27324593

  6. Hybrid Quantum Point Contact-Superconductor Devices Using InSb Nanowires

    NASA Astrophysics Data System (ADS)

    Gill, Stephen; Damasco, John Jeffrey; Car, Diana; Bakkers, Erik; Mason, Nadya

    Recent experiments using hybrid nanowire (NW)-superconductor (SC) devices have provided evidence for Majorana quasiparticles in tunneling experiments. However, these tunneling experiments are marked by a soft superconducting gap, which likely originates from disorder at the NW-SC interface. Hence, clean NW-SC interfaces are important for future Majorana studies. By carefully processing the NW-SC interface, we have realized quantized conductance steps in quantum point contacts fabricated from InSb NWs and superconducting contacts. We study the length dependence of ballistic behavior and the induced superconductivity in InSb NWs by quantum point contact spectroscopy. Additionally, we discuss how the transport in InSb NW-SC quantum point contacts evolves in magnetic field.

  7. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  8. Recent progress in InSb based quantum detectors in Israel

    NASA Astrophysics Data System (ADS)

    Klipstein, Philip; Aronov, Daniel; Ezra, Michael ben; Barkai, Itzik; Berkowicz, Eyal; Brumer, Maya; Fraenkel, Rami; Glozman, Alex; Grossman, Steve; Jacobsohn, Eli; Klin, Olga; Lukomsky, Inna; Shkedy, Lior; Shtrichman, Itay; Snapi, Noam; Yassen, Michael; Weiss, Eliezer

    2013-07-01

    InSb is a III-V binary semiconductor material with a bandgap wavelength of 5.4 μm at 77 K, well matched to the 3-5 μm MWIR atmospheric transmission window. When configured as a Focal Plane Array (FPA) detector, InSb photodiodes offer a large quantum efficiency, combined with excellent uniformity and high pixel operability. As such, InSb arrays exhibit good scalability and are an excellent choice for large format FPAs at a reasonable cost. The dark current is caused by Generation-Recombination (G-R) centres in the diode depletion region, and this leads to a typical operating temperature of ˜80 K in detectors with a planar implanted p-n junction. Over the last 15 years SCD has developed and manufactured a number of different 2-dimensional planar FPA formats, with pitches in the range of 15-30 μm. In recent years a new epi-InSb technology has been developed at SCD, in which the G-R contribution to the dark current is reduced. This enables InSb detector operation at 95-100 K, with equivalent performance to standard InSb at 80 K. In addition, using a new patented XBnn device architecture in which the G-R current is totally suppressed, epitaxial InAsSb detectors have been developed with a bandgap wavelength of 4.2 μm, which can operate in the 150-170 K range. In this short review of the past two decades, a number of key achievements in SCD's InSb based detector development program are described. These include High Operating Temperature (HOT) epi-InSb FPAs, large format megapixel FPAs with high functionality using a digital Read Out Integrated Circuit (ROIC), and ultra low Size, Weight and Power (SWaP) FPAs based on the HOT XBnn architecture.

  9. Effects of buffer layers on the structural and electronic properties of InSb films

    SciTech Connect

    Weng, X.; Rudawski, N.G.; Wang, P.T.; Goldman, R.S.; Partin, D.L.; Heremans, J.

    2005-02-15

    We have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb+InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy (TEM) indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation (filtering) of threading dislocations for the low-misfit (high-misfit and step-graded) buffers. A quantitative analysis of electron mobility and carrier-concentration dependence on threading dislocation density suggests that electron scattering from the lattice dilation associated with threading dislocations has a stronger effect on electron mobility than electron scattering from the depletion potential surrounding the dislocations. Furthermore, while lattice dilation is the predominant mobility-limiting factor in these n-doped InSb films, ionized impurity scattering associated with dopants also plays a role in limiting the electron mobility.

  10. Modeling and stress analysis of large format InSb focal plane arrays detector under thermal shock

    NASA Astrophysics Data System (ADS)

    Zhang, Li-Wen; Meng, Qing-Duan; Zhang, Xiao-Ling; Yu, Qian; Lv, Yan-Qiu; Si, Jun-Jie

    2013-09-01

    Higher fracture probability, appearing in large format InSb infrared focal plane arrays detector under thermal shock loadings, limits its applicability and suitability for large format equipment, and has been an urgent problem to be solved. In order to understand the fracture mechanism and improve the reliability, three dimensional modeling and stress analysis of large format InSb detector is necessary. However, there are few reports on three dimensional modeling and simulation of large format InSb detector, due to huge meshing numbers and time-consuming operation to solve. To solve the problems, basing on the thermal mismatch displacement formula, an equivalent modeling method is proposed in this paper. With the proposed equivalent modeling method, employing the ANSYS software, three dimensional large format InSb detector is modeled, and the maximum Von Mises stress appearing in InSb chip dependent on array format is researched. According to the maximum Von Mises stress location shift and stress increasing tendency, the adaptability range of the proposed equivalent method is also derived, that is, for 16 × 16, 32 × 32 and 64 × 64 format, its adaptability ranges are not larger than 64 × 64, 256 × 256 and 1024 × 1024 format, respectively. Taking 1024 × 1024 InSb detector as an example, the Von Mises stress distribution appearing in InSb chip, Si readout integrated circuits and indium bump arrays are described, and the causes are discussed in detail. All these will provide a feasible research plan to identify the fracture origins of InSb chip and reduce fracture probability for large format InSb detector.

  11. Solidification of InSb-GaSb alloy and InSb with vibration

    NASA Technical Reports Server (NTRS)

    Yuan, Weijun

    1992-01-01

    The objective of this project is to determine the influence of vibration on the composition homogeneity and microstructure of alloy semiconductors solidified with the Vertical Bridgman-Stockbarger (VBS) technique. InSb-GaSb and InSb were directionally solidified in a VBS apparatus with axial vibration of the ampoule.

  12. Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

    PubMed Central

    2013-01-01

    Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

  13. High-quality InSb growth by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akira; Moriyasu, Yoshitaka; Kuze, Naohiro

    2015-03-01

    We have investigated the electron transport properties and crystallinity of InSb films deposited on GaAs substrates. The films were grown by metalorganic vapor phase epitaxy with trimethylindium and trisdimethylaminoantimony as In and Sb sources. Using a two-step growth method and investigating growth conditions extensively, we found that the electron mobility of films either 1.0 or 1.5 μm thick strongly depended on the temperature at which the first layer (25 nm thick) was grown. The highest mobility, 61,200 cm2 V-1 s-1, was obtained at growth temperature of 260 °C and the smallest full-width at half-maximum (FWHM) of the X-ray deflection rocking curve, 205 arcsec, was obtained at 320 °C. These mobility and FWHM values, both of which are for a total InSb thickness of 1.5 μm, are superior to those of InSb films grown by molecular beam epitaxy. Secondary ion mass spectrometry measurements showed that below 340 °C the carbon impurity concentration increased drastically with decreasing growth temperature. This carbon incorporated InSb indicated p-type behavior at low temperature by Hall measurement. These results suggest that high concentrations of carbon impurities compensated the extrinsic electrons generated from InSb/GaAs interfacial dislocations.

  14. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

    SciTech Connect

    Theocharous, Evangelos

    2005-10-10

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar.

  15. Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate

    PubMed Central

    2011-01-01

    Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V. PMID:22112251

  16. Ideal mode operation of an InSb charge injection device

    NASA Astrophysics Data System (ADS)

    Wei, C.-Y.; Woodbury, H. H.

    1984-12-01

    Unlike Si or HgCdTe CID (charge injection device) arrays, which normally operate at 1 MHz with the presence of a less than 10 percent fat zero (i.e., ideal mode), current InSb CID arrays fabricated on InSb CID arrays fabricated on InSb substrates can operate either at a much lower clock frequency of 10 kHz (i.e., slow charge transfer mode), or when both row and column potential wells are partially filled with a large bias charge (i.e., charge sharing mode). The slow charge transfer mode is very ineffective in reading out signal charge from a large-area array and the charge sharing mode exhibits difficulties such as reduced readout efficiency, increased line capacitance, and a large photocurrent effect. By contrast, the ideal mode is free of these problems. This paper describes the design and fabrication of an InSb CID array, which for the first time, successfully demonstrates the ideal mode operation.

  17. Ab initio calculations of the optical properties of crystalline and liquid InSb

    NASA Astrophysics Data System (ADS)

    Sano, Haruyuki; Mizutani, Goro

    2015-11-01

    Ab initio calculations of the electronic and optical properties of InSb were performed for both the crystalline and liquid states. Two sets of atomic structure models for liquid InSb at 900 K were obtained by ab initio molecular dynamics simulations. To reduce the effect of structural peculiarities in the liquid models, an averaging of the two sets of the calculated electronic and optical properties corresponding to the two liquid models was performed. The calculated results indicate that, owing to the phase transition from crystal to liquid, the density of states around the Fermi level increases. As a result, the energy band gap opening near the Fermi level disappears. Consequently, the optical properties change from semiconductor to metallic behavior. Namely, owing to the melting of InSb, the interband transition peaks disappear and a Drude-like dispersion is observed in the optical dielectric functions. The optical absorption at a photon energy of 3.06 eV, which is used in Blu-ray Disc systems, increases owing to the melting of InSb. This increase in optical absorption is proposed to result from the increased optical transitions below 2 eV.

  18. Ab initio calculations of the optical properties of crystalline and liquid InSb

    SciTech Connect

    Sano, Haruyuki; Mizutani, Goro

    2015-11-15

    Ab initio calculations of the electronic and optical properties of InSb were performed for both the crystalline and liquid states. Two sets of atomic structure models for liquid InSb at 900 K were obtained by ab initio molecular dynamics simulations. To reduce the effect of structural peculiarities in the liquid models, an averaging of the two sets of the calculated electronic and optical properties corresponding to the two liquid models was performed. The calculated results indicate that, owing to the phase transition from crystal to liquid, the density of states around the Fermi level increases. As a result, the energy band gap opening near the Fermi level disappears. Consequently, the optical properties change from semiconductor to metallic behavior. Namely, owing to the melting of InSb, the interband transition peaks disappear and a Drude-like dispersion is observed in the optical dielectric functions. The optical absorption at a photon energy of 3.06 eV, which is used in Blu-ray Disc systems, increases owing to the melting of InSb. This increase in optical absorption is proposed to result from the increased optical transitions below 2 eV.

  19. Enhanced Raman Scattering from InSb Nanodots; Temperature and Laser-Power Dependent Studies

    NASA Astrophysics Data System (ADS)

    Wada, Noboru; Takayama, Haruki; Morohashi, Satoshi

    2010-03-01

    InSb nanodots were uniquely fabricated by vapor-transport on a Si substrate which had previously been bombarded by FBI Ga ions. The InSb nanodots were then examined by spatially-resolved Raman scattering using an Ar-ion laser (λ= 514.5 and 488 nm with P=1˜15 mW) with an optical microscope and CCD detector. In addition to the TO and LO peaks of InSb observed at ˜180 and 191 cm-1 respectively, two peaks were observed at ˜110 and 150 cm-1. Those Raman peaks were tentatively attributed to the 2TA and TO-TA second-order Raman processes. Those two peak intensities appeared to grow at the expense of the TO and LO Raman peak intensities with increasing the sample temperature from 10 K to 450 K. Also, the two-phonon peak intensities increased non-linearly with the probing laser power used. Hot carriers and their interactions with phonons in the restricted regions will be discussed together with Raman scattering results obtained from single-crystal InSb.

  20. Self-assembly of a 1-eicosanethiolate layer on InSb(100)

    NASA Astrophysics Data System (ADS)

    Contreras, Yissel; Muscat, Anthony J.

    2016-05-01

    1-Eicosanethiolate molecules form relatively weak bonds with the surface of InSb(100) limiting the order of the self-assembled monolayer despite the long length of the alkyl chain. Heating to only 225 °C in vacuum completely desorbed the eicosanethiolate layer from the surface based on X-ray photoelectron spectroscopy. Even after deposition times as long as 20 h in ethanol, the asymmetric methylene stretch was at 2925 cm-1 in the attenuated total reflection Fourier transform infrared spectrum, which is indicative of alkane chains that are incompletely ordered. Atomic force microscopy images combined with ellipsometry showed that the eicosanethiolate layer conformed to the rough InSb(100) starting surface (2.3 ± 0.2 nm RMS). The reoxidation kinetics in air of InSb(100) and InSb(111)B covered with eicosanethiolate layers was the same despite the lower surface roughness of the latter (0.64 ± 0.14 nm). The bond that the S head group makes with the substrate is the primary factor that determines the cohesiveness of the molecules on the surface. Although interactions between the alkane chains in the layer are sufficient to form a self-assembled layer, the fluidity of the molecules in the layer compromised the chemical passivation of the surface resulting in reoxidation in air after 20 min.

  1. Crystal structure control in Au-free self-seeded InSb wire growth.

    PubMed

    Mandl, Bernhard; Dick, Kimberly A; Kriegner, Dominik; Keplinger, Mario; Bauer, Günther; Stangl, Julian; Deppert, Knut

    2011-04-01

    In this work we demonstrate experimentally the dependence of InSb crystal structure on the ratio of Sb to In atoms at the growth front. Epitaxial InSb wires are grown by a self-seeded particle assisted growth technique on several different III-V substrates. Detailed investigations of growth parameters and post-growth energy dispersive x-ray spectroscopy indicate that the seed particles initially consist of In and incorporate up to 20 at.% Sb during growth. By applying this technique we demonstrate the formation of zinc-blende, 4H and wurtzite structure in the InSb wires (identified by transmission electron microscopy and synchrotron x-ray diffraction), and correlate this sequential change in crystal structure to the increasing Sb/In ratio at the particle-wire interface. The low ionicity of InSb and the large diameter of the wire structures studied in this work are entirely outside the parameters for which polytype formation is predicted by current models of particle seeded wire growth, suggesting that the V/III ratio at the interface determines crystal structure in a manner well beyond current understanding. These results therefore provide important insight into the relationship between the particle composition and the crystal structure, and demonstrate the potential to selectively tune the crystal structure in other III-V compound materials as well. PMID:21346304

  2. Growth of InSb on GaAs Using InAlSb Buffer Layers

    SciTech Connect

    BIEFELD, ROBERT M.; PHILLIPS, JAMIE D.

    1999-09-20

    We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approximately} 0.55 {micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron nobilities of {approximately}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1{minus}x}Al{sub x}Sb buffers for compositions x{le}0.22 and have found that the best results are obtained near x=0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch.

  3. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.

    PubMed

    de la Mata, María; Leturcq, Renaud; Plissard, Sébastien R; Rolland, Chloé; Magén, César; Arbiol, Jordi; Caroff, Philippe

    2016-02-10

    Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom. PMID:26733426

  4. Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide

    SciTech Connect

    Lvova, T. V. Dunaevskii, M. S.; Lebedev, M. V.; Shakhmin, A. L.; Sedova, I. V.; Ivanov, S. V.

    2013-05-15

    The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na{sub 2}S and subsequent annealing in vacuum at 150 Degree-Sign C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.

  5. Structural stability and electronic properties of InSb nanowires: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Tang, Li-Ming; Ning, Feng; Wang, Dan; Chen, Ke-Qiu

    2015-03-01

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  6. Structural stability and electronic properties of InSb nanowires: A first-principles study

    SciTech Connect

    Zhang, Yong; Tang, Li-Ming Ning, Feng; Chen, Ke-Qiu; Wang, Dan

    2015-03-28

    Using first-principles calculations, we investigate the structural stability and electronic properties of InSb nanowires (NWs). The results show that, in contrast to the bulk InSb phase, wurtzite (WZ) NWs are more stable than zinc-blende (ZB) NWs when the NW diameter is smaller than 10 nm. Nonpassivated ZB and WZ NWs are found to be metallic and semiconducting, respectively. After passivation, both ZB and WZ NWs exhibit direct-gap semiconductor character, and the band gap magnitude of the NWs strongly depends on the suppression of surface states by the charge-compensation ability of foreign atoms to surface atoms. Moreover, the carrier mobility of the NW can be strengthened by halogen passivation.

  7. Energy level spectroscopy of InSb quantum wells using quantum-well LED emission

    NASA Astrophysics Data System (ADS)

    Tenev, T. G.; Palyi, A.; Mirza, B. I.; Nash, G. R.; Fearn, M.; Smith, S. J.; Buckle, L.; Emeny, M. T.; Ashley, T.; Jefferson, J. H.; Lambert, C. J.

    2009-02-01

    We have investigated the low-temperature optical properties of InSb quantum-well (QW) light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al0.143In0.857Sb , QW2 had a 40 nm undoped InSb well with a barrier composition of Al0.077In0.923Sb , and QW3 had a 100 nm undoped InSb well with a barrier composition of Al0.025In0.975Sb . For QW1, the signature of two transitions (CB1-HH1 and CB1-HH2) can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k.p calculation of the band structure together with a first-order time-dependent perturbation method (Fermi golden rule) calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of “forbidden transitions,” and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

  8. Polymorphism and the crystal structures of InSb at elevated temperature and pressure

    NASA Technical Reports Server (NTRS)

    Yu, S.-C.; Spain, I. L.; Skelton, E. F.

    1978-01-01

    The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.

  9. Electronic structure and magnetism of doped wurtzite InSb nanowire

    NASA Astrophysics Data System (ADS)

    Wang, Dan; Tang, Li-Ming

    2016-05-01

    Using first-principles calculations, the effect on the magnetism of passivation, acceptors occupying on different sites, 3d 2-3d 10 impurities doping and interactions in [0 0 0 1] wurtzite InSb nanowire have been investigated. The results show that (i) the InSb nanowire is self-passivated and the dangling bonds of which do not induce any gap-states and spin-polarization. Thus pseudo-hydrogen saturation has little effect on removing gap-states, causing spin-polarization, and stabilizing the spin ground state. (ii) The magnetic moments induced by early 3d (Ti, V, Cr and Mn) impurities correspond to the numbers of free 3d electrons, while the late 3d (Ni, Cu and Zn) impurities cannot give rise to any spin-polarization. (iii) Although both are acceptor doped, InSb:Mn and InSb:Ge reveal pronounced differences on spin-polarization. The former has almost the largest magnetic moment and spin-splitting among the 3d impurities doped InSb nanowires, whereas the latter has no spin-polarization. These phenomenon are explained well by employing the level repulsion descriptions.

  10. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    PubMed Central

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  11. Interband magneto-spectroscopy in InSb square and parabolic quantum wells

    SciTech Connect

    Kasturiarachchi, T.; Edirisooriya, M.; Mishima, T. D.; Doezema, R. E.; Santos, M. B.; Saha, D.; Pan, X.; Sanders, G. D.; Stanton, C. J.

    2015-06-07

    We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III–V semiconductors leading to a small effective mass (0.014 m{sub 0}) and a large g–factor (−51). As a result, the Landau level spacing is large at relatively small magnetic fields (<8 T), and one can observe spin-splitting of the Landau levels. We examine two structures: (i) a multiple-square-well structure and (ii) a structure containing multiple parabolic wells. The energies and intensities of the strongest features are well explained by a modified Pidgeon-Brown model based on an 8-band k•p model that explicitly incorporates pseudomorphic strain. The strain is essential for obtaining agreement between theory and experiment. While modeling the square well is relatively straight-forward, the parabolic well consists of 43 different layers of various thickness to approximate a parabolic potential. Agreement between theory and experiment for the parabolic well validates the applicability of the model to complicated structures, which demonstrates the robustness of our model and confirms its relevance for developing electronic and spintronic devices that seek to exploit the properties of the InSb band structure.

  12. Schottky barrier and contact resistance of InSb nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Kang, N.; Gorji Ghalamestani, Sepideh; Dick, Kimberly A.; Xu, H. Q.

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height {{{Φ }}}{{SB}}∼ 20 {{meV}} is present at the metal–InSb NW interfaces and its effective height is gate-tunable. The contact resistance ({R}{{c}}) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that {R}{{c}} in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field {B}{{c}}. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au–InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

  13. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.

    PubMed

    Li, S; Kang, N; Fan, D X; Wang, L B; Huang, Y Q; Caroff, P; Xu, H Q

    2016-01-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

  14. Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

    NASA Astrophysics Data System (ADS)

    Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

    2016-04-01

    Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics.

  15. Nanoporosity-induced superhydrophobicity and large antireflection in InSb

    NASA Astrophysics Data System (ADS)

    Datta, Debi Prasad; Som, Tapobrata

    2016-05-01

    A porous nanostructure evolves in InSb due to keV ion implantation which leads to superhydrophobic and large antireflective property, indicating a single-step facile fabrication to introduce both functionalities. In particular, it is observed that the contact angle of a water droplet on the nanoporous InSb surface exceeds 150°, revealing the transition to a superhydrophobic surface. Correlation between the contact angle and the porous nanostructures is qualitatively understood in light of the Cassie-Baxter model. It is found that a decrease in the fraction of solid surface wetted by the water droplet and a corresponding increase in the air-water interface fraction lead to the enhancement in the hydrophobicity. We further observe that the large broadband antireflection (in the range of 200-800 nm) is also correlated to the nanoporous structure, arising out of a large reduction in the refractive index due to its increasing porosity. Such a surface with the combination of superhydrophobicity and large antireflection can be very useful for applications of InSb nanostructures in electronic, photonic devices, or infrared detectors.

  16. Schottky barrier and contact resistance of InSb nanowire field-effect transistors.

    PubMed

    Fan, Dingxun; Kang, N; Ghalamestani, Sepideh Gorji; Dick, Kimberly A; Xu, H Q

    2016-07-01

    Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height [Formula: see text] is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance ([Formula: see text]) in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that [Formula: see text] in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field [Formula: see text]. A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices. PMID:27232588

  17. Study of advanced InSb arrays for SIRTF (Space Infrared Telescope Facility)

    NASA Technical Reports Server (NTRS)

    Hoffman, Alan; Feitt, Robert

    1989-01-01

    The Santa Barbara Research Center has completed a study leading to the development of advanced Indium Antimonide detector arrays for the Space Infrared Telescope Facility (SIRTF) Focal Plane Array Detector (FPAD) Subsystem of the Infrared Array Camera (IRAC) Band 1. The overall goal of the study was to perform design tradeoff studies, analysis and research to develop a Direct Readout Integrated Circuit to be hybridized to an advanced, high performance InSb detector array that would satisfy the technical requirements for Band 1 as specified in the IRAC Instrument Requirements Document (IRD), IRAC-202. The overall goal of the study was divided into both a near-term goal and a far-term goal. The near-term goal identifies current technology available that approaches, and in some cases meets the program technological goals as specified in IRAC-202. The far-term goal identifies technology development required to completely achieve SIRTF program goals. Analyses of potential detector materials indicates that InSb presently meets all Band 1 requirements and is considered to be the baseline approach due to technical maturity. The major issue with regard to photovoltaic detectors such as InSb and HgCdTe is to achieve a reduction in detector capacitance.

  18. Optimizing spin-orbit splittings in InSb Majorana nanowires

    NASA Astrophysics Data System (ADS)

    Soluyanov, Alexey A.; Gresch, Dominik; Troyer, Matthias; Lutchyn, Roman M.; Bauer, Bela; Nayak, Chetan

    2016-03-01

    Semiconductor-superconductor heterostructures represent a promising platform for the detection of Majorana zero modes and subsequently the processing of quantum information using their exotic non-Abelian statistics. Theoretical modeling of such low-dimensional heterostructures is generally based on phenomenological effective models. However, a more microscopic understanding of the band structure and, especially, of the spin-orbit coupling of electrons in these devices is important for optimizing their parameters for applications in quantum computing. In this paper, we approach this problem by first obtaining a highly accurate effective tight-binding model of bulk InSb from ab initio calculations. This model is symmetrized and correctly reproduces both the band structure and the wave function character. It is then used to simulate slabs of InSb in external electric fields. The results of this simulation are used to determine a growth direction for InSb nanowires that optimizes the conditions for the experimental realization of Majorana zero modes.

  19. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Fan, Dingxun; Li, Sen; Kang, N.; Caroff, Philippe; Wang, L. B.; Huang, Y. Q.; Deng, M. T.; Yu, C. L.; Xu, H. Q.

    2015-09-01

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  20. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices. PMID:26308470

  1. Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

    SciTech Connect

    D'Costa, Vijay Richard Yeo, Yee-Chia; Tan, Kian Hua; Jia, Bo Wen; Yoon, Soon Fatt

    2015-06-14

    Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06–4.6 eV shows the critical point transitions E{sub 0}, E{sub 1}, E{sub 1} + Δ{sub 1}, E{sub 0}{sup ′}, and E{sub 2}. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics.

  2. Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation.

    PubMed

    Pandya, Sneha G; Kordesch, Martin E

    2015-12-01

    Nanoparticles (NPs) of indium antimonide (InSb) were synthesized using a vapor phase synthesis technique known as inert gas condensation (IGC). NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grids and (111) p-type silicon wafers. TEM studies showed a bimodal distribution in the size of the NPs with average particle size of 13.70 nm and 33.20 nm. The Raman spectra of InSb NPs exhibited a peak centered at 184.27 cm(-1), which corresponds to the longitudinal optical (LO) modes of phonon vibration in InSb. A 1:1 In-to-Sb composition ratio was confirmed by energy dispersive X-ray (EDX). X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (HRTEM) studies revealed polycrystalline behavior of these NPs with lattice spacing around 0.37 and 0.23 nm corresponding to the growth directions of (111) and (220), respectively. The average crystallite size of the NPs obtained using XRD peak broadening results and the Debye-Scherrer formula was 25.62 nm, and the value of strain in NPs was found to be 0.0015. NP's band gap obtained using spectroscopy and Fourier transform infrared (FTIR) spectroscopy was around 0.43-0.52 eV at 300 K, which is a blue shift of 0.26-0.35 eV. The effects of increased particle density resulting into aggregation of NPs are also discussed in this paper. PMID:26061444

  3. Characterization of InSb Nanoparticles Synthesized Using Inert Gas Condensation

    NASA Astrophysics Data System (ADS)

    Pandya, Sneha G.; Kordesch, Martin E.

    2015-06-01

    Nanoparticles (NPs) of indium antimonide (InSb) were synthesized using a vapor phase synthesis technique known as inert gas condensation (IGC). NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grids and (111) p-type silicon wafers. TEM studies showed a bimodal distribution in the size of the NPs with average particle size of 13.70 nm and 33.20 nm. The Raman spectra of InSb NPs exhibited a peak centered at 184.27 cm-1, which corresponds to the longitudinal optical (LO) modes of phonon vibration in InSb. A 1:1 In-to-Sb composition ratio was confirmed by energy dispersive X-ray (EDX). X-ray diffractometer (XRD) and high-resolution transmission electron microscopy (HRTEM) studies revealed polycrystalline behavior of these NPs with lattice spacing around 0.37 and 0.23 nm corresponding to the growth directions of (111) and (220), respectively. The average crystallite size of the NPs obtained using XRD peak broadening results and the Debye-Scherrer formula was 25.62 nm, and the value of strain in NPs was found to be 0.0015. NP's band gap obtained using spectroscopy and Fourier transform infrared (FTIR) spectroscopy was around 0.43-0.52 eV at 300 K, which is a blue shift of 0.26-0.35 eV. The effects of increased particle density resulting into aggregation of NPs are also discussed in this paper.

  4. InSb arrays: Astronomy with a 32x32 CCD/development of a 58x62 DRO

    NASA Technical Reports Server (NTRS)

    Forrest, W. J.; Pipher, J. L.

    1986-01-01

    Experience gained in operating infrared detector arrays for high sensitivity astronomical applications at the University of Rochester are summarized. Progress made in operating the 32 x 32 InSb array with bump-bonded Silicon CCD readout is described. Astronomical work done with the 32 x 32 camera is also described. Plans for the future, including improvements for the 32 x 32 camera system as well as implementing a new generation of 58 x 62 InSb array using switched-MOSFET direct readout multiplexing system in the place of the older CCD technology is discussed.

  5. Coupled Heat Transfer and Fluid Dynamics Modeling of InSb Solidification

    NASA Astrophysics Data System (ADS)

    Barvinschi, Paul; Barvinschi, Floricica

    2011-10-01

    A method for the directional solidification of melted InSb in a silica ampoule is presented and solved with COMSOL Multiphysics. The configuration and initial boundary settings of the model resemble those used in a de-wetting vertical Bridgman configuration [1]. A slightly modified version of the method presented by Voller and Prakash [2] is used to account for solidification of the liquid phase, including convection and conduction heat transfer with mushy region phase change. Axial-symmetric numerical simulations of temperature and velocity fields, under normal gravity, are carried out using different thermal conditions.

  6. Initial Transient in Zn-doped InSb Grown in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A G.; Marin, C.; Volz, M.; Duffar, T.

    2009-01-01

    Three Zn-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS) Alpha. The distribution of the Zn was measured using SIMS. A short diffusion-controlled transient, typical for systems with k greater than 1 was demonstrated. Static pressure of approximately 4000 N/m2 was imposed on the melt, to prevent bubble formation and dewetting. Still, partial de-wetting has occurred in one experiment, and apparently has disturbed the diffusive transport of Zn in the melt.

  7. Performance analysis of InSb based QWFET for ultra high speed applications

    NASA Astrophysics Data System (ADS)

    Subash, T. D.; Gnanasekaran, T.; Divya, C.

    2015-01-01

    An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5-10 times low DC power dissipation.

  8. Conductance Quantization at Zero Magnetic Field in InSb Nanowires

    NASA Astrophysics Data System (ADS)

    Kammhuber, Jakob; Cassidy, Maja C.; Zhang, Hao; Gül, Önder; Pei, Fei; de Moor, Michiel W. A.; Nijholt, Bas; Watanabe, Kenji; Taniguchi, Takashi; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.

    2016-06-01

    Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T.

  9. Conductance Quantization at Zero Magnetic Field in InSb Nanowires.

    PubMed

    Kammhuber, Jakob; Cassidy, Maja C; Zhang, Hao; Gül, Önder; Pei, Fei; de Moor, Michiel W A; Nijholt, Bas; Watanabe, Kenji; Taniguchi, Takashi; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Kouwenhoven, Leo P

    2016-06-01

    Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one-dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally we study the contribution of orbital effects to the sub-band dispersion for different orientation of the magnetic field, observing a near-degeneracy between the second and third sub-bands. PMID:27121534

  10. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    SciTech Connect

    Das, Suprem R.; Mohammad, Asaduzzaman; Janes, David B.; Akatay, Cem; Khan, Mohammad Ryyan; Alam, Muhammad A.; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.

    2014-08-28

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along 〈311〉 directions for the branches and along 〈111〉 for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  11. Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces

    NASA Astrophysics Data System (ADS)

    Tereshchenko, O. E.

    2006-08-01

    The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 °C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1), (1 × 3), (4 × 3), and (4 × 1)/c(8 × 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers.

  12. Growth of In-Sb Fine Particles by Flowing-Gas Evaporation Technique

    NASA Astrophysics Data System (ADS)

    Iwama, Saburo; Mihama, Kazuhiro

    Fine particles of the In-Sb system were prepared by the FGE technique (flowing-gas evaporation technique). The characteristic of the technique is that the formation of the vapor zone and particle growth zone along the flow of inert gas can be controlled by the inert-gas species and the flow velocity. From single-source evaporations, In fine islands grown on the amorphous carbon in the metal vapor zone showed a fiber structure with [111] and [001] fiber axes. In the particle growth zone In fine particles were formed, showing very frequently a characteristic contrast in them due to a lattice defect. Sb fine particles showed amorphous structure. These results may be attributed to the enhanced quenching effect of the FGE technique, already observed in the ordinary gas-evaporation technique. By coevaporation of In and Sb, granular film grew in the metal vapor zone, and fine particles were formed in the particle growth zone. The crystal structure was assigned to be the zincblende type including the wurtzite type of intermetallic compound InSb.

  13. Structural characterization of InSb thin films grown by electrodeposition

    SciTech Connect

    Singh, Joginder Rajaram, P.

    2015-06-24

    In the present work we have grown InSb thin films on brass substrates, using the electrodeposition technique. The electrochemical baths used in the growth were made up of aqueous solutions of InCl{sub 3} and SbCl{sub 3} mixed together in various proportions. The films grown were characterized by X-Ray diffraction (XRD), Scanning Electron Microscopy (SEM), and Energy Dispersive Analysis of X-rays (EDAX). Compositional studies show that stoichiometric InSb films can be prepared from a bath containing 0.05M InCl{sub 3} and 0.04M SbCl{sub 3}. XRD studies reveal that the films grown are polycrystalline having the zinc blende structure with (111) orientation. Crystallite size, dislocation density and strain were calculated using the XRD results. Optical transmission spectra were recorded using an FTIR spectrophotometer. The value of direct band gap was found to be around 0.20 eV for the thin films having the best stoichiometry.

  14. Epitaxial InSb for elevated temperature operation of large IR focal plane arrays

    NASA Astrophysics Data System (ADS)

    Ashley, Tim; Burke, Theresa M.; Emeny, Martin T.; Gordon, Neil T.; Hall, David J.; Lees, David J.; Little, J. Chris; Milner, Daniel

    2003-09-01

    The use of epitaxially grown indium antimonide (InSb) has previously been demonstrated for the production of large 2D focal plane arrays. It confers several advantages over conventional, bulk InSb photo-voltaic detectors, such as reduced cross-talk, however here we focus on the improvement in operating temperature that can be achieved because more complex structures can be grown. Diode resistance, imaging, NETD and operability results are presented for a progression of structures that reduce the diode leakage current as the temperature is raised above 80K, compared with a basic p+-n-n+ structure presented previously. These include addition of a thin region of InAlSb to reduce p-contact leakage current, and construction of the whole device from InAlSb to reduce thermal generation in the active region of the detector. An increase in temperature to 110K, whilst maintaining full 80K performance, is achieved, and imaging up to 130K is demonstrated. This gives the prospect of significant benefits for the cooling systems, including, for example, use of argon in Joule-Thomson coolers or an increase in the life and/or decrease in the cost; power consumption and cool-down time of Stirling engines by several tens of per cent.

  15. High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

    PubMed Central

    2013-01-01

    Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm−3 and an electron mobility of 215.25 cm2 V−1 s−1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W−1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain. PMID:23866944

  16. Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

    PubMed Central

    Obukhov, S. A.; Tozer, S. W.; Coniglio, W. A.

    2015-01-01

    We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm−3 in the temperature range T = 300 K–40 mK, magnetic field B = 0–25T and hydrostatic pressure P = 0–17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes. PMID:26307952

  17. Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties

    NASA Astrophysics Data System (ADS)

    Das, Suprem R.; Akatay, Cem; Mohammad, Asaduzzaman; Khan, Mohammad Ryyan; Maeda, Kosuke; Deacon, Russell S.; Ishibashi, Koji; Chen, Yong P.; Sands, Timothy D.; Alam, Muhammad A.; Janes, David B.

    2014-08-01

    In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a "trunk" (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along ⟨311⟩ directions for the branches and along ⟨111⟩ for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.

  18. Operating the ISO-SWS InSb detectors at temperatures above 4 K

    NASA Astrophysics Data System (ADS)

    Vandenbussche, Bart K.; de Graauw, Thijs; Beintema, Douwe A.; Feuchtgruber, Helmut; Heras, A.; Kester, D.; Lahuis, F.; Lorente, R.; Leech, K.; Huygen, E.; Morris, P.; Roelfsema, Peter R.; Salama, A.; Waters, R.; Wieprecht, E.

    1999-12-01

    The Short-Wavelength Spectrometer (SWS) is one of the four focal plane instruments of ESA's Infrared Space Observatory (ISO). The satellite was launched on November 15, 1995 with a super fluid Helium content of about 2300 liters to keep the telescope, the scientific payload and the optical baffles at operating temperatures between 2 and 8 K. On April 8, 1998 the liquid Helium depleted and the instruments were switched-off when the focal plane reached a temperature of 4.2 K. A satellite engineering test program was conducted between April 20 and May 10. Timeslots before and during the test program were used to operate the InSb detectors of the SWS instrument while the temperature of the focal plane slowly increased up to 40 K. The instrument was used to record spectra of 260 stars between 2.36 and 4.05 microns at a resolution of 2000 and with high S/N. Goal of the program was to observe a set of stars covering the entire MK spectral classification scheme to extend this classification scheme to the infrared. We discuss changes in the instrument relevant for operating and calibrating the instrument at temperatures above 4K: changes in the InSb detector behavior (dark levels, noise, response, ...), behavior of the JFETs and geometry changes in the grating scanner mechanism. We also show that the calibration of the data obtained after Helium loss is accurate, resulting in a data set of great scientific value.

  19. Rashba Zero-Field Spin Splitting in InSb Heterostructures*

    NASA Astrophysics Data System (ADS)

    Khodaparast, G. A.; Doezema, R. E.; Chung, S. J.; Goldammer, K. J.; Santos, M. B.

    2001-03-01

    (Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures (C-SPIN), The University of Oklahoma, Norman, OK, 73019) We observe electron spin resonance (ESR) using far-infrared spectroscopy in symmetric and asymmetric MBE-grown InSb quantum wells. The electron concentrations are in the range (0.95-2.8)x10^11 cm-2 and the mobilities are in the (70,000-150,000) cm^2/Vsec range. In asymmetric wells, we find large deviations in the g-factor compared to the bulk g-factor of InSb which we attribute to spin splitting at zero magnetic field. The asymmetric wells show these deviations from the behavior of symmetric wells at low magnetic fields as well as shifts in the ESR at high fields which depend on Landau level index. We use these shifts to extract α , the Rashba spin-splitting parameter in our heterostructures. We also discuss the extension of our ESR studies to gated samples to achieve higher α values. *This work was supported by NSF grant nos. DMR-9973167, EPS-9720651, and DMR-0080054.

  20. Molar and excess volumes of liquid In-Sb, Mg-Sb, and Pb-Sb alloys

    SciTech Connect

    Hansen, A.R.; Kaminski, M.A. ); Eckert, C.A. )

    1990-04-01

    By a direct Archimedes' technique, volumetric data were obtained for liquid In, Mg, Pb, and Sb and mixtures of In-Sb, Mg-Sb, and Pb-Sb. In this paper the excess volumes for the alloys studied are presented and discussed.

  1. ns or fs pulsed laser ablation of a bulk InSb target in liquids for nanoparticles synthesis.

    PubMed

    Semaltianos, N G; Hendry, E; Chang, H; Wears, M L; Monteil, G; Assoul, M; Malkhasyan, V; Blondeau-Patissier, V; Gauthier-Manuel, B; Moutarlier, V

    2016-05-01

    Laser ablation of bulk target materials in liquids has been established as an alternative method for the synthesis of nanoparticles colloidal solutions mainly due to the fact that the synthesized nanoparticles have bare, ligand-free surfaces since no chemical precursors are used for their synthesis. InSb is a narrow band gap semiconductor which has the highest carrier mobility of any known semiconductor and nanoparticles of this material are useful in optoelectronic device fabrication. In this paper a bulk InSb target was ablated in deionized (DI) water or ethanol using a nanosecond (20 ns) or a femtosecond (90 fs) pulsed laser source, for nanoparticles synthesis. In all four cases the largest percentage of the nanoparticles are of InSb in the zincblende crystal structure with fcc lattice. Oxides of either In or Sb are also formed in the nanoparticles ensembles in the case of ns or fs ablation, respectively. Formation of an oxide of either element from the two elements of the binary bulk alloy is explained based on the difference in the ablation mechanism of the material in the case of ns or fs pulsed laser irradiation in which the slow or fast deposition of energy into the material results to mainly melting or vaporization, respectively under the present conditions of ablation, in combination with the lower melting point but higher vaporization enthalpy of In as compared to Sb. InSb in the metastable phase with orthorhombic lattice is also formed in the nanoparticles ensembles in the case of fs ablation in DI water (as well as oxide of InSb) which indicates that the synthesized nanoparticles exhibit polymorphism controlled by the type of the laser source used for their synthesis. The nanoparticles exhibit absorption which is observed to be extended in the infrared region of the spectrum. PMID:26866890

  2. Low-background performance of a monolithic InSb CCD array

    NASA Technical Reports Server (NTRS)

    Bregman, J. D.; Goebel, J. H.; Mccreight, C. R.; Matsumoto, T.

    1982-01-01

    A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.

  3. Development of InSb charge-coupled infrared imaging devices: Linear imager

    NASA Technical Reports Server (NTRS)

    Phillips, J. D.

    1976-01-01

    The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

  4. Evaluation of electron mobility in InSb quantum wells by means of percentage-impact

    NASA Astrophysics Data System (ADS)

    Mishima, T. D.; Edirisooriya, M.; Santos, M. B.

    2014-05-01

    In order to quantitatively analyze the contribution of each scattering factor toward the total carrier mobility, we use a new convenient figure-of-merit, named a percentage impact. The mobility limit due to a scattering factor, which is widely used to summarize a scattering analysis, has its own advantage. However, a mobility limit is not quite appropriate for the above purpose. A comprehensive understanding of the difference in contribution among many scattering factors toward the total carrier mobility can be obtained by evaluating percentage impacts of scattering factors, which can be straightforwardly calculated from their mobility limits and the total mobility. Our percentage impact analysis shows that threading dislocation is one of the dominant scattering factors for the electron transport in InSb quantum wells at room temperature.

  5. Unit cell structure of crystal polytypes in InAs and InSb nanowires.

    PubMed

    Kriegner, Dominik; Panse, Christian; Mandl, Bernhard; Dick, Kimberly A; Keplinger, Mario; Persson, Johan M; Caroff, Philippe; Ercolani, Daniele; Sorba, Lucia; Bechstedt, Friedhelm; Stangl, Julian; Bauer, Günther

    2011-04-13

    The atomic distances in hexagonal polytypes of III-V compound semiconductors differ from the values expected from simply a change of the stacking sequence of (111) lattice planes. While these changes were difficult to quantify so far, we accurately determine the lattice parameters of zinc blende, wurtzite, and 4H polytypes for InAs and InSb nanowires, using X-ray diffraction and transmission electron microscopy. The results are compared to density functional theory calculations. Experiment and theory show that the occurrence of hexagonal bilayers tends to stretch the distances of atomic layers parallel to the c axis and to reduce the in-plane distances compared to those in zinc blende. The change of the lattice parameters scales linearly with the hexagonality of the polytype, defined as the fraction of bilayers with hexagonal character within one unit cell. PMID:21434674

  6. Submillimeter wave absorption of n-type InSb at low temperatures

    NASA Technical Reports Server (NTRS)

    Brown, E. R.

    1985-01-01

    The absorption coefficient of two high-purity n-InSb samples is measured in the 10-40 per cm range using Fourier transform spectroscopy. The absorption coefficient spectrum is presented for both samples at 4.2 K. It is also shown for the lower resistance sample cooled to 2.2 K and heated by dc bias to elevated electron gas temperatures of 7.5 and 17.9 K. ac Drude theory gives rather poor agreement with experiment at 2.2 and 4.2 K but does much better when the sample electron gas is heated. In contrast, a simple quantum mechanical theory of absorption based on inverse Bremsstrahlung yields promising agreement at the lower temperatures although its applicability is questionable. The non-Drudian absorption is shown to have a favorable effect on the performance of InSb hot-electron bolometers.

  7. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  8. A new type of low temperature conductivity in InSb doped with Mn

    NASA Astrophysics Data System (ADS)

    Obukhov, Sergey A.

    2012-06-01

    We investigated unusual low temperature transport properties of InSb single crystals doped with manganese to concentrations in the range of 1017

  9. InSb 288*32 FPA with digital TDI for low background application

    NASA Astrophysics Data System (ADS)

    Chishko, V. F.; Kasatkin, I. L.; Lopukhin, A. A.

    2007-05-01

    32*288 format FPA based on InSb two dimension arrays (IDA) of photodiodes with function of digital TDI were investigated at low background flow. Dark currents of TDA photodiodes in wide temperature region, spectral noise distribution and threshold power with TDI simulation are investigated. It was established that at T=77K dark current is (I - 3)*10-11A at optimal negative bias and decreases in the order of magnitude at T=65K. Threshold power at T=77K at integration time Ti=6 ms is not more 2*10 -14 W/pixel and is limited commonly by dark current noise. Modeling of digital TDI showed that not more than twenty TDI stages are effective because of the presence of 1/f noise and threshold power would be at about 3*10 -15 W/pixel.

  10. Reducing noise from a Stirling micro cooler used with an InSb diode

    NASA Astrophysics Data System (ADS)

    Bingham, Nicolas R.; Ashley, Michael C. B.

    2014-07-01

    Stirling micro coolers, such as the K508 from Ricor, are useful components of scientific instruments when there is a need to remove modest amounts of heat (~1/2W) at liquid nitrogren temperatures with an input power of less than 10W. The action of the cooler can, however, couple noise into sensitive detectors through a variety of mechanisms such as electromagnetic interference, mechanical vibration, and small temperature fluctuations. We report on successful noise-mitigation strategies for our application, an InSb diode for detecting light at 2.4 microns. The largest benefit was obtained by sychronizing the integration times with the position of the piston in the micro cooler. The piston position was determined using a hall-effect rotor position sensor in the driving motor.

  11. Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

    NASA Technical Reports Server (NTRS)

    Koch, T. L.; Thom, R. D.; Parrish, W. D.

    1981-01-01

    The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

  12. Multi-element double ring infrared detector based on InSb

    NASA Astrophysics Data System (ADS)

    Li, Mo; Lv, Hui; Guo, Li; Liu, Zhu

    2015-10-01

    A multi-element double ring infrared detector based on InSb p-n photodiodes is presented. The presented detector includes an outer ring detector and an inner ring detector. Each ring consist 10 detector elements, five mid-wave infrared detector elements and five short wave infrared detector elements. Two wavebands of 3.5-5 μm and 1.5-3 μm in mid-wave infrared and short wave infrared are adopted. The mid-wave infrared and short wave infrared detector elements are arranged alternately and close to each other to form detection pair. Between the adjacent detector elements, there is an interval to avoid cross talk. Dual band filter thin films are directly coated on the photodiode surface to form a dual band infrared detector. The double ring detector which can perform dual band IR counter-countermeasures can track target effectively under infrared countermeasure conditions.

  13. 3 mega-pixel InSb detector with 10μm pitch

    NASA Astrophysics Data System (ADS)

    Gershon, G.; Albo, A.; Eylon, M.; Cohen, O.; Calahorra, Z.; Brumer, M.; Nitzani, M.; Avnon, E.; Aghion, Y.; Kogan, I.; Ilan, E.; Shkedy, L.

    2013-06-01

    SCD has developed a new 1920x1536 / 10 μm digital Infrared detector for the MWIR window named Blackbird. The Blackbird detector features a Focal Plane Array (FPA) that incorporates two technological building blocks developed over the past few years. The first one is a 10 μm InSb pixel based on the matured planar technology. The second building block is an innovative 10 μm ReadOut Integrated Circuit (ROIC) pixel. The InSb and the ROIC arrays are connected using Flip-Chip technology by means of indium bumps. The digital ROIC consists a matrix of 1920x1536 pixels and has an analog to digital (A/D) converter per-channel (total of 1920x2 A/Ds). It allows for full frame readout at a high frame rate of up to 120 Hz. Such an on-chip A/D conversion eliminates the need for several A/D converters with fairly high power consumption at the system level. The ROIC power consumption at maximum bandwidth is less than 400 mW. It features a wide range of pixel-level functionality such as several conversion gain options and a 2x2 pixel binning. The ROIC design makes use of the advanced and matured CMOS technology, 0.18 μm, which allows for high functionality and relatively low power consumption. The FPA is mounted on a Cold-Finger by a specially designed ceramic substrate. The whole assembly is housed in a stiffened Dewar that withstands harsh environmental conditions while minimizing the environment heat load contribution to the heat load of the detector. The design enables a 3-megapixel detector with overall low size, weight, and power (SWaP) with respect to comparable large format detectors. In this work we present in detail the characteristic performance of the new Blackbird detector.

  14. Structure of the indium-rich InSb(001) surface

    NASA Astrophysics Data System (ADS)

    Goryl, G.; Toton, D.; Tomaszewska, N.; Prauzner-Bechcicki, J. S.; Walczak, L.; Tejeda, A.; Taleb-Ibrahimi, A.; Kantorovich, L.; Michel, E. G.; Kolodziej, J. J.

    2010-10-01

    The indium-rich InSb(001) surface, that shows the c(8×2) reconstruction at room temperature and a partially disordered phase at 77 K (the low temperature or LT phase), is studied experimentally by means of scanning probe microscopies, low-energy electron diffraction, and angle-resolved photoelectron spectroscopy (ARPES), as well as theoretically, using the density-functional theory (DFT). The experimental studies are done both at room temperature and at cryogenic temperatures. No metallic surface bands are found using ARPES, consequently the idea of charge-density waves as a possible explanation of the LT phase suggested previously by Goryl [Surf. Sci. 601, 3605 (2007)]10.1016/j.susc.2007.07.002 is discarded. On the other hand it is shown that an essential core of the surface structure is described by the so-called ζ model which has the c(8×2) symmetry. However, on top of this basic structure there are additional not fully occupied indium-atom rows. Vacancies/atoms in these rows rapidly fluctuate at room temperature while, upon cooling down, they stabilize to form a sublattice also of c(8×2) symmetry. Furthermore, this sublattice has shifted mirror symmetry axes (relating to those of the underlying ζ lattice) therefore the surface symmetry is lowered from c2mm to p2 and structural domains are formed. This occurs with no significant core ζ lattice distortions but dense domain borders lead to significant disorder in the top atomic layer. DFT calculations confirm that the postulated ζ -like structure with additional 50% occupied indium-atom rows is stable on the InSb (001) surface. Calculated, in the Tersoff-Hammann approximation, scanning tunneling microscopy (STM) images of the relaxed surface structure agree well with experimental STM images.

  15. Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Abautret, J.; Evirgen, A.; Perez, J. P.; Laaroussi, Y.; Cordat, A.; Boulard, F.; Christol, P.

    2015-06-01

    In this paper, inductively coupled plasma etching of InSb material has been investigated using methane-hydrogen chemistry. Plasma conditions were first studied in terms of bias autopolarization, partial methane quantity in a CH4/H2 mixture and chamber pressure. The surface morphology of the etched samples was analyzed using an atomic force microscope, scanning electron microscope and x-ray photoelectron spectrometry (XPS) measurements. The results highlight the difficulties in removing etching products related to In, and the surface roughness is mainly correlated with the methane ratio in the mixture. The best surface stoichiometry, with a surface roughness of 7 nm and an etch rate of 110 nm min-1, was obtained with the addition of argon. To evaluate the feasibility of high performance infrared photodiodes, InSb monopixels were fabricated by dry etching, electrically characterized under illumination and compared with devices obtained by wet etching.

  16. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    SciTech Connect

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-11-30

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10{sup 20 }cm{sup −3} obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed.

  17. Observation of Structural Anisotropy and the Onset of Liquidlike Motion During the Nonthermal Melting of InSb

    SciTech Connect

    Gaffney, K.J.; Lindenberg, A.M.; Arthur, J.; Brennan, S.; Luening, K.; Hastings, J.B.; Sokolowski-Tinten, K.; Blome, C.; Duesterer, S.; Ischebeck, R.; Schlarb, H.; Schulte-Schrepping, H.; Schneider, J.; Sheppard, J.; Wark, J.S.; Caleman, C.; Bergh, M.

    2005-09-16

    The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements observe the delayed onset of diffusive atomic motion, signaling the appearance of liquidlike dynamics. They also demonstrate that the root-mean-squared displacement in the [111] direction increases faster than in the [110] direction after the first 500 fs. This structural anisotropy indicates that the initially generated fluid differs significantly from the equilibrium liquid.

  18. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing

    NASA Astrophysics Data System (ADS)

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-01

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air trilayer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte.

  19. Electronic and Structural Response of InSb to Ultra-short and Ultra-intense Laser Pulses

    NASA Astrophysics Data System (ADS)

    Burzo, Andrea; Allen, Roland

    2002-03-01

    The present work is motivated in part by the increasing interest in a better understanding of the optical properties of InSb, the main material used to manufacture infrared detectors. In addition, there have been recent experimental studies of the behavior of InSb following application of ultra-short and ultra-intense laser pulses. Motivated directly by these experiments, we have performed simulations of the electron-ion dynamics of InSb subjected to femtosecond-scale laser pulses. These simulations employ a tight-binding approximation, and the time-dependent Schroedinger equation is solved with an adapted Cayley algorithm which conserves probability. The atomic forces are obtained from a generalized Hellmann-Feynman theorem, which may be also interpreted as a generalized Ehrenfest theorem. We find that above a certain threshold intensity the lattice loses its tetrahedral structure and becomes disrupted. In addition, the band gap collapses and the material becomes metallic. Comparison of our simulations with experiments involving measurements of the imaginary part of the dielectric function shows good agreement in all important aspects. Further investigation of microscopic quantities, such as the atomic pair correlation function, the occupancies of excited states, and the displacement of atoms from their initial positions, strengthens our conclusion that the semiconductor exhibits a nonthermal phase transition as the intensity of the laser pulse is increased.

  20. Thin InSb layers with metallic gratings: a novel platform for spectrally-selective THz plasmonic sensing.

    PubMed

    Lin, Shuai; Bhattarai, Khagendra; Zhou, Jiangfeng; Talbayev, Diyar

    2016-08-22

    We present a computational study of terahertz optical properties of a grating-coupled plasmonic structure based on micrometer-thin InSb layers. We find two strong absorption resonances that we interpret as standing surface plasmon modes and investigate their dispersion relations, dependence on InSb thickness, and the spatial distribution of the electric field. The observed surface plasmon modes are well described by a simple theory of the air/InSb/air tri-layer. The plasmonic response of the grating/InSb structure is highly sensitive to the dielectric environment and the presence of an analyte (e.g., lactose) at the InSb interface, which is promising for terahertz plasmonic sensor applications. We determine the sensor sensitivity to be 7200 nm per refractive index unit (or 0.06 THz per refractive index unit). The lower surface plasmon mode also exhibits a splitting when tuned in resonance with the vibrational mode of lactose at 1.37 THz. We propose that such interaction between surface plasmon and vibrational modes can be used as the basis for a new sensing modality that allows the detection of terahertz vibrational fingerprints of an analyte. PMID:27557222

  1. Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Bhattacharya, P. K.; Chen, Y. C.; Tsukamoto, S.

    1989-01-01

    Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

  2. Growth of InSb and InI Crystals on Earth and in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Churilov, A.; Volz, M. P.; Riabov, V.; Van den Berg, L.

    2015-01-01

    During the past 40 years, dozens of semiconductor crystal growth experiments have been conducted in space laboratories. The subsequent analysis of the space-grown crystals revealed (i) that weak convection existed in virtually all melt-growth experiments, (ii) de-wetting significantly reduced the level of stress-induced defects, and (iii) particularly encouraging results were obtained in vapor-growth experiments. In 2002, following a decade of ground based research in growing doped Ge and GaSb crystals, a series of crystal growth experiments was performed at the ISS, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation. Te- and Zn-doped InSb crystals were grown from the melt. The specially designed furnace provided a side-view of the melt and precise seeding measurement of the growth rate. At present, under sponsorship of CASIS (Center for the Advancement of Science in Space, www.iss-casis.org), we are conducting ground-based experiments with indium mono-iodide (InI) in preparation for the "SUBSA II" ISS investigation, planned for 2017. The experiments include: i) Horizontal Bridgman (HB) growth and ii) Vapor Transport (VT) growth. Finite element modeling will also be conducted, to optimize the design of the flight ampoules, for vapor and melt growth.

  3. XPS study of interface formation of CVD SiO2 on InSb

    NASA Astrophysics Data System (ADS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-10-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  4. Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

    SciTech Connect

    Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A.

    2014-07-21

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 μm have been demonstrated and characterized. The gain was determined to be 2.9 cm{sup −1} per QD layer, and the waveguide loss was ∼15 cm{sup −1} at 4 K. Spontaneous emission measurements below threshold revealed a blue shift of the peak wavelength with increasing current, indicating filling of ground state heavy hole levels in the QDs. The characteristic temperature, T{sub 0} = 101 K below 50 K, but decreased to 48 K at higher temperatures. The emission wavelength of these lasers showed first a blue shift followed by a red shift with increasing temperature. A hybrid structure was used to fabricate the laser by combining a liquid phase epitaxy grown p-InAs{sub 0.61}Sb{sub 0.13}P{sub 0.26} lower cladding layer and an upper n{sup +} InAs plasmon cladding layer which resulted in a maximum operating temperature (T{sub max}) of 120 K in pulsed mode, which is the highest reported to date.

  5. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  6. Te-and Zn-Doped InSb Crystals Grown in Microgravity

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Marin, C.; Volz, M.; Bonner, W. A.; Duffar, T.

    2004-01-01

    In 2002, within the SUBSA (Solidification Using a Baffle in Sealed Ampoules) investigation, seven doped InSb crystals were grown in microgravity at the International Space Station. The key goals of the SUBSA investigation are: (a) to clarify the origin of the melt convection in space laboratories; (b) to reduce melt convection to the level which allows reproducible diffusion-controlled segregation; (e) to explore the submerged baffle process and liquid encapsulation in microgravity. 30 crystal growth experiments were conducted in the ground unit, to optimize the design of flight ampoules and to test the transparent SUBSA furnace developed by TecMasters Inc. The specially designed furnace, allowed observation of the crystal growth process (melting, seeding, motion of the solid-liquid interface, etc.). In the summer of 2002, eight crystal growth experiments were conducted in the Microgravity Science Glovebox (MSG) facility at the ISS. Four Te-doped (k = 0.5) and three Zn-doped (k2.9) crystals were grown on undoped seeds. In one experiment, we were not able to seed and grow. The seven grown crystals were sectioned and analyzed using SIMS. The design of the SUBSA ampoules, the segregation data and the video images obtained during the SUBSA flight experiments will be presented and discussed.

  7. Anomalous oscillations of the Josephson supercurrent in InSb nanowires

    NASA Astrophysics Data System (ADS)

    Geresdi, Attila; Szombati, Dániel B.; Cornelissen, Ludo J.; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.

    2014-03-01

    Semiconductor nanowires proximity coupled to superconducting leads provide an ideal experimental platform to investigate the Josephson effect in tunable ballistic channels in the presence of strong spin-orbit coupling and large Landé g-factor. The interplay of an external magnetic field perpendicular to the intrinsic spin-orbit field may lead to an anomalous supercurrent which is a proposed signature of the coupling between two Majorana modes through the channel. Here we present our experimental studies of the Josephson supercurrent in InSb nanowires. Ohmic contacts to bulk superconductor NbTiN leads enable us to trace supercurrents up to B = 3 T magnetic field. The gate control over the channel allows us to investigate the amplitude of the critical current from the tunneling regime to a few transparent modes, where nonsinusoidal current-phase relationship (CPR) is expected, verified by the presence of fractional Shapiro steps under microwave irradiation. The evolution of the critical current with the external magnetic field is shown to exhibit non-monotonic behavior depending on the gate configuration, consistently with the theory of Josephson junctions hosting Majorana modes.

  8. Structure of CdTe-Cd1 - xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B.

    1989-09-01

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first transmission electron microscope investigation of this multilayer system grown on InSb. The work clearly demonstrates that multiple quantum wells of high structural quality can be grown reproducibly over a wide range of layer thicknesses. The importance of efficient substrate surface cleaning prior to growth is demonstrated. In order to grow high structural quality multilayers, the choice of buffer layer is also important and a possible explanation for this observation is given.

  9. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    SciTech Connect

    Kang, Nam Lyong

    2014-12-07

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were P{sub pe}=4.0×10{sup 22} eV/m for InSb and P{sub pe}=1.2×10{sup 23} eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  10. Calculation of the electron spin relaxation times in InSb and InAs by the projection-reduction method

    NASA Astrophysics Data System (ADS)

    Kang, Nam Lyong

    2014-12-01

    The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were Ppe=4.0 ×1022 eV/m for InSb and Ppe=1.2 ×1023 eV/m for InAs. The result also showed that the relaxation of the electron spin by the Elliot-Yafet process is more relevant for InSb than InAs at a low density.

  11. Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

    NASA Technical Reports Server (NTRS)

    Ostrogorsky, A. G.; Marin, C.; Duffar, T.; Volz, M.

    2009-01-01

    In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

  12. Numerical Simulation of the Dissolution Process of GaSb into InSb Melt under Normal and Microgravity Conditions

    NASA Astrophysics Data System (ADS)

    Takagi, Youhei; Suzuki, Natsuki; Okano, Yasunori; Tanaka, Akira; Hayakawa, Yasuhiro; Dost, Sadik

    Temperature Gradient Growth experiments of InxGa1-xSb will be performed on the International Space Station (ISS) in 2012. In the GaSb/InSb/GaSb-sandwich system used, before growth, the dissolution process of GaSb into InSb takes place during the formation of the growth solution (melt). Solutal mass transport occurring during dissolution plays a significant role. In crystal growth on Earth, the large difference between the densities of InSb and GaSb leads to gravitational segregation in the melt and axial non-uniformity in crystal composition. In addition, the large separation between the liquidus and solidus curves in the phase diagram of this system further contributes to compositional non-uniformity. In order to have a better understanding for the effect of gravity on solutal transport during in this system, the dissolution process was numerically simulated under both Earth’s gravity and a microgravity level on the ISS. Numerical simulations showed that under Earth’s gravity, dissolution of the GaSb seed was enhanced due to the contribution of solutal natural convection. However, under microgravity diffusion mass transport was dominant in the melt, and the contribution of natural convection was not significant.

  13. Chemical composition of the SiO2/InSb interface as determined by X-ray photoelectron spectroscopy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-01-01

    In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.

  14. Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.

    PubMed

    Ardakani, Abbas Ghasempour

    2013-06-20

    We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated. PMID:23842164

  15. Two-dimensional infrared speckle interferometry with a 32 X 32 InSb charge-injection device (CID) array

    NASA Astrophysics Data System (ADS)

    Sibille, F.; Chelli, A.; Lena, P.; Stefanovitch, D.

    1982-10-01

    The conditions which have to be satisfied to take full advantage of the speckle method are considered. It is found that InSb arrays of infrared detectors with a 32 x 32 format satisfy these conditions with telescopes of the 4 m class and with seeings up to 2 arc seconds at 2 microns, or up to 5 arc seconds at 5 microns. An InSb CID array, type Z 7844, of 32 x 32 elements with 72 x 72 micro sq m pixel pitch and 52 x 52 micro sq m pixel effective collection area providing a filling factor of 70 percent was manufactured by an American company. The first astronomical tests were performed with the array in October 1981. The array was used at the infrared focus of the 2.1 m telescope of the Kitt Peak National Observatory. Two infrared speckled images of the star Beta Peg are shown. The images were obtained at 3.5 and at 5 microns.

  16. 60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

    SciTech Connect

    Datta, D. P.; Garg, S. K.; Som, T.; Satpati, B.; Kanjilal, A.; Dhara, S.; Kanjilal, D.

    2014-10-14

    Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

  17. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    SciTech Connect

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q. E-mail: hongqi.xu@ftf.lth.se

    2015-09-07

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  18. Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

    NASA Astrophysics Data System (ADS)

    Liao, Gaohua; Luo, Ning; Yang, Zhihu; Chen, Keqiu; Xu, H. Q.

    2015-09-01

    We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective

  19. Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

    NASA Astrophysics Data System (ADS)

    Firsov, D. D.; Komkov, O. S.; Solov’ev, V. A.; Kop’ev, P. S.; Ivanov, S. V.

    2016-07-01

    Photoluminescence (PL) properties of type-II InSb/InAs periodic nanostructures containing above-monolayer (ML)-thick InSb insertions, grown by molecular beam epitaxy, are studied by using an FTIR spectrometer in wide temperature range. The samples exhibit bright PL in the 3.5–5.5 μm range, which is attributed to recombination of holes localized in InSb with electrons accumulated nearby in the InAs matrix. An increase in the InSb nominal thickness from 1 ML to 1.6 ML results in an increase of the PL peak wavelength up to 5.5 μm (300 K), and significantly improves luminescence intensity at 300 K due to a twice larger energy of hole localization. The InSb/InAs nanostructures also demonstrate an anomalous ‘blue’ shift of the PL peak energy as the temperature increases in the 12–80 K range, which is attributed to the thermally induced population of localized states in the InSb insertions, emerging due to composition/thickness fluctuations. Sb segregation in the cap InAs barrier smooths the potential inhomogeneities in the insertions, which reduces the broadening parameter.

  20. Influence of Contact Angle, Growth Angle and Melt Surface Tension on Detached Solidification of InSb

    NASA Technical Reports Server (NTRS)

    Wang, Yazhen; Regel, Liya L.; Wilcox, William R.

    2000-01-01

    We extended the previous analysis of detached solidification of InSb based on the moving meniscus model. We found that for steady detached solidification to occur in a sealed ampoule in zero gravity, it is necessary for the growth angle to exceed a critical value, the contact angle for the melt on the ampoule wall to exceed a critical value, and the melt-gas surface tension to be below a critical value. These critical values would depend on the material properties and the growth parameters. For the conditions examined here, the sum of the growth angle and the contact angle must exceed approximately 130, which is significantly less than required if both ends of the ampoule are open.

  1. Laser damage tests on InSb photodiodes at 1.064 micron and 0.532 micron

    NASA Technical Reports Server (NTRS)

    Bearman, G. H.; Staller, C.; Mahoney, C.

    1992-01-01

    InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.

  2. Direct Imaging of the InSb(001)-c(8×2) Surface: Evidence for Large Anisotropy of the Reconstruction

    NASA Astrophysics Data System (ADS)

    Mishima, T. D.; Naruse, N.; Cho, S. P.; Kadohira, T.; Osaka, T.

    2002-12-01

    We have observed the InSb(001)-c(8×2) surface by using high-resolution transmission electron microscopy in the profile-imaging geometry. All images observed at temperatures up to 420 °C agree well with the c(8×2) model reported by Kumpf et al. [

    Phys. Rev. Lett.PRLTAO0031-9007 86, 3586 (2001)
    ]. 1/30 sec real-time observations at 420 °C evidence that a part of the subsurface and surface layers (called a gull-type segment) undergo switching to and from a bulk configuration. The finding is suggestive of large anisotropy in the mean square displacement of the c(8×2) surface.

  3. Polishing of InSb in K2Cr2O7-HBr-HCl (oxalic acid) solutions

    NASA Astrophysics Data System (ADS)

    Tomashik, V. N.; Kusiak, N. V.; Tomashik, Z. F.; Danylenko, S. G.

    2001-02-01

    Dissolution of InAs in the K2Cr2O7-HBr-HCl (oxalic acid) solutions is studied in reproducible hydrodynamics conditions. The surfaces of equal etching rate are constructed using mathematical planning of experiment, and the limiting stages of the dissolution process are determined. The kinetic behavior of indicated semiconductors depending on the mixing rate and temperature of solution was investigated and it was shown that the dissolution of these semiconductor compounds in the solutions of the investigated systems is limited by the diffusion stages. The dissolution rates of InSb in such solutions distinguish weakly from each other and are within the interval of 0.5 - 6 micrometer/min. The solutions of K2Cr2O7-HBr-HCl (oxalic acid) systems can be employed for the developing of polishing solutions for the indium antimonide treatment with small etching rate.

  4. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    SciTech Connect

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D.

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  5. The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field

    SciTech Connect

    Gadjialiev, M. M. Pirmagomedov, Z. Sh.

    2009-08-15

    Thermopower of the Corbino disc made of InSb with n{sub 77} = 2 x 10{sup 14} cm{sup -3} in a transverse magnetic field as high as 30 kOe at temperatures of 60, 67, and 80 K is studied. It is established that the diffusion fraction of thermopower in a quantizing magnetic field rises according to the power law H{sup 2.2} at all mentioned temperatures. By the magnitude of saturation thermopower {alpha}{sub xx}({infinity}) in a high field, the scattering mechanism of charge carriers is determined. It is established that in a temperature region of 60-80 K, the electrons are scattered by acoustic phonons.

  6. Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications

    SciTech Connect

    BIEFELD,ROBERT M.; PHILLIPS,J.D.

    1999-12-08

    We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of {approx}0.55{micro}m thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron mobilities of {approx}40,000 cm{sup 2}/V.s. We have investigated the In{sub 1-x}Al{sub x}Sb buffers for compositions x {le} 0.22 and have found that the best results are obtained near x = 0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch.

  7. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

    1998-11-23

    A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

  8. Sulfur passivation of InSb(1 0 0) surfaces: Comparison of aqueous and alcoholic ammonium sulfide solutions using X-ray photoemission spectroscopy

    NASA Astrophysics Data System (ADS)

    Lvova, Tatiana V.; Shakhmin, Aleksandr L.; Sedova, Irina V.; Lebedev, Mikhail V.

    2014-08-01

    The chemical composition and the electronic properties of the n-InSb(1 0 0) surface treated with ammonium sulfide dissolved in water or in 2-propanol has been studied by X-ray photoemission spectroscopy. The solvent determines the mechanism of chemical reaction between InSb(1 0 0) surface and sulfide solution. The variation of the solvent leads to variations in chemical composition and electronic structure of the final sulfide layers. Aqueous sulfide solution withdraws antimony atoms from the InSb(1 0 0) surface very fast due to solubility of antimony sulfides, whereas after treatment with alcoholic sulfide solution the antimony sulfides remain on the surface. The Fermi level at the InSb(1 0 0)/passivation layer interface occurs usually deeply in the conduction band of semiconductor and its position depends on the time of sulfur treatment. However, after prolonged treatment with aqueous sulfide solution and surface depletion with antimony the Fermi level is found in the valence band. Although both solutions remove the native oxide layer, the residual oxygen content is lower after treatment with the solution of ammonium sulfide in 2-propanol.

  9. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

    SciTech Connect

    Zhang Guodong; Sun Weiguo; Xu Shuli; Zhao Hongyan; Su Hongyi; Wang Haizhen

    2009-07-15

    InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

  10. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect

    Trinh, Hai-Dang; Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi ; Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho; Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia; Wang, Shin-Yuan; Yi Chang, Edward; Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan

    2013-09-30

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup −4} A/cm{sup −2}. The D{sub it} value of smaller than 10{sup 12} eV{sup −1}cm{sup −2} has been obtained using conduction method.

  11. Analysis of energy states of two-dimensional electron gas in pseudomorphically strained InSb high-electron-mobility transistors taking into account the nonparabolicity of the conduction band

    NASA Astrophysics Data System (ADS)

    Nishio, Yui; Sato, Takato; Hirayama, Naomi; Iida, Tsutomu; Takanashi, Yoshifumi

    2016-08-01

    We propose a high electron mobility transistor with a pseudomorphically strained InSb channel (InSb-PHEMT) having an InSb composite channel layer in which the Al y In1‑ y Sb sub-channel layer is inserted between the InSb channel and the Al x In1‑ x Sb barrier layers to increase the conduction-band offset (ΔE C) at the heterointerface between the InSb channel and the Al x In1‑ x Sb barrier layers. The energy states for the proposed InSb-PHEMTs are calculated using our analytical method, taking account of the nonparabolicity of the conduction band. For the proposed InSb-PHEMTs, putting the sub-channel layers into the channel is found to be effective for obtaining a sufficiently large ΔE C (∼0.563 eV) to restrain electrons in the channel and increase the sheet concentration of two-dimensional electron gas to as high as 2.5 × 1012 cm‑2, which is comparable to that of InAs-PHEMTs. This also leads to a large transconductance of PHEMTs. In the proposed InSb-PHEMTs, electrons are strongly bound to the channel layer compared with InAs-PHEMTs, despite the effective mass at the conduction band (0.0139 m 0) of InSb being smaller than that of InAs and ΔE C for the InSb-PHEMTs being 25% smaller than that for the InAs-PHEMTs. This is because the bandgap energy of InSb is about one-half that of InAs, and hence, the nonparabolicity parameter of InSb is about twice as large as that of InAs.

  12. XPS study of interface formation of CVD SiO2 on InSb. [X-ray Photoemission Spectroscopy

    NASA Technical Reports Server (NTRS)

    Vasquez, R. P.; Grunthaner, F. J.

    1981-01-01

    The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

  13. ASTROCAM: offner re-imaging 1024 X 1024 InSb camera for near-infrared astrometry on the USNO 1.55-m telescope

    NASA Astrophysics Data System (ADS)

    Fischer, Jacqueline; Vrba, Frederick J.; Toomey, Douglas W.; Lucke, Bob L.; Wang, Shu-i.; Henden, Arne A.; Robichaud, Joseph L.; Onaka, Peter M.; Hicks, Brian; Harris, Frederick H.; Stahlberger, Werner E.; Kosakowski, Kris E.; Dudley, Charles C.; Johnston, Kenneth J.

    2003-03-01

    In order to extend the US Naval Observatory (USNO) small-angle astrometric capabilities to near infrared wavelengths we have designed and manufactured a 1024 x 1024 InSb re-imaging infrared camera equipped with an array selected from the InSb ALADDIN (Advanced Large Area Detector Development in InSb) development program and broadband and narrowband 0.8 - 3.8 μm filters. Since the USNO 1.55-m telescope is optimized for observations at visible wavelengths with an oversized secondary mirror and sky baffles, the straylight rejection capabilities of the ASTROCAM Lyot stop and baffles are of critical importance for its sensitivity and flat- fielding capabilities. An Offner relay was chosen for the heart of the system and was manufactured from the same melt of aluminum alloy to ensure homologous contraction from room temperature to 77 K. A blackened cone was installed behind the undersized hole (the Lyot stop) in the Offner secondary. With low distortion, a well-sampled point spread function, and a large field of view, the system is well suited for astrometry. It is telecentric, so any defocus will not result in a change of image scale. The DSP-based electronics allow readout of the entire array with double-correlated sampling in 0.19 seconds, but shorter readout is possible with single sampling or by reading out only small numbers of subarrays. In this paper we report on the optical, mechanical, and electronic design of the system and present images and results on the sensitivity and astrometric stability obtained with the system, now operating routinely at the 1.55-m telescope with a science-grade ALADDIN array.

  14. Interface and facet control during Czochralski growth of (111) InSb crystals for cost reduction and yield improvement of IR focal plane array substrates

    NASA Astrophysics Data System (ADS)

    Gray, Nathan W.; Perez-Rubio, Victor; Bolke, Joseph G.; Alexander, W. B.

    2014-10-01

    Focal plane arrays (FPAs) made on InSb wafers are the key cost-driving component in IR imaging systems. The electronic and crystallographic properties of the wafer directly determine the imaging device performance. The "facet effect" describes the non-uniform electronic properties of crystals resulting from anisotropic dopant segregation during bulk growth. When the segregation coefficient of dopant impurities changes notably across the melt/solid interface of a growing crystal the result is non-uniform electronic properties across wafers made from these crystals. The effect is more pronounced in InSb crystals grown on the (111) axis compared with other orientations and crystal systems. FPA devices made on these wafers suffer costly yield hits due to inconsistent device response and performance. Historically, InSb crystal growers have grown approximately 9-19 degree off-axis from the (111) to avoid the facet effect and produced wafers with improved uniformity of electronic properties. It has been shown by researchers in the 1960s that control of the facet effect can produce uniform small diameter crystals. In this paper, we share results employing a process that controls the facet effect when growing large diameter crystals from which 4, 5, and 6" wafers can be manufactured. The process change resulted in an increase in wafers yielded per crystal by several times, all with high crystal quality and uniform electronic properties. Since the crystals are grown on the (111) axis, manufacturing (111) oriented wafers is straightforward with standard semiconductor equipment and processes common to the high-volume silicon wafer industry. These benefits result in significant manufacturing cost savings and increased value to our customers.

  15. p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Chiang, P. K.; Bedair, S. M.

    1985-01-01

    p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.

  16. Detailed investigation of InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Biing-Der; Lee, Si-Chen; Sun, Tai-Ping; Yang, Sheng-Jenn

    1995-05-01

    The InSb metal-oxide-semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micron were fabricated successfully. The SiO2 prepared by photo-enhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common-source current-voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

  17. The origin of instability in metal/SiO2/InSb capacitor fabricated by photo-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sun, Tai-Ping; Lee, Si-Chen; Yang, Sheng-Jenn

    1989-10-01

    The AuCr/SiO2/InSb MOS capacitor was fabricated using photoenhanced CVD. The electrical and structural properties were analyzed by capacitance-voltage and AES, respectively. The high-frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.

  18. Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs

    NASA Astrophysics Data System (ADS)

    Litvinenko, K. L.; Leontiadou, M. A.; Li, Juerong; Clowes, S. K.; Emeny, M. T.; Ashley, T.; Pidgeon, C. R.; Cohen, L. F.; Murdin, B. N.

    2010-03-01

    Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4 T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D'yakonov-Perel' dephasing process is suppressed. At the high field limit the Elliot-Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field.

  19. Experimental determination of the inelastic mean free path of electrons in GaSb and InSb

    NASA Astrophysics Data System (ADS)

    Gergely, G.; Sulyok, A.; Menyhard, M.; Toth, J.; Varga, D.; Jablonski, A.; Krawczyk, M.; Gruzza, B.; Bideux, L.; Robert, C.

    1999-04-01

    The inelastic mean free path (IMFP) of electrons is a fundamental material parameter for quantitative surface- and thin-film analysis by AES and XPS. Experimental determination of IMFP is based on the elastic peak electron spectroscopy (EPES) The intensity of the elastic peak recorded for the sample is compared with that of the Ni reference. The IMFP is evaluated from the Monte Carlo (MC) calculations of the elastic backscattering probability. The MC algorithm is based on elastic scattering cross-sections from the NIST 64 database and IMFP values of Ni. Experiments have been carried out in three laboratories working with different types of electron spectrometers and energy ranges: HSA, E=0.2-5 keV; CMA, E=0.2-2 keV, and RFA, E=0.2-1.5 keV. GaSb(100) and InSb(100) samples have been cleaned and their surface layer amorphized by an Ar + ion bombardment at Eion=2 keV. The surface composition after cleaning was checked in situ by XPS. No metallic Ga, In or Sb phases were evidenced by plasmon losses on the surface after Eion=2 keV Ar + ion treatment. The MC calculations were based on the real surface composition. Thus, the IMFP values experimentally obtained for the ion bombarded samples can be considered as the volume parameters for E>0.5 keV. A reasonable agreement was found with the calculated IMFP data of NIST and with other theoretically determined values of the IMFP.

  20. In-Rich Reconstructions of the InSb(100) Surface and Chemisorption of Lithium on the c (8x2) Surface - An Ab Initio Study.*

    NASA Astrophysics Data System (ADS)

    Ganapathy, Sridevi L.

    2005-03-01

    The local density approximation to density functional theory (LDA-DFT) has been used to study the different possible relaxations and reconstructions of the In-rich InSb (100) surface. The surfaces are modeled by a three-layer surface with alternating In and Sb atoms and In atoms in the first layer. Hydrogen atoms are used to saturate the dangling bonds of In atoms in the bottom layer to simulate the semi-infinite effect of the surface. Periodic boundary conditions with pseudo-potentials have been used and all simulations have been carried out with the Gaussian 03 suite of programs.^1 We will report on various electronic and geometric structure properties of the possible (1x2), (2x1), (4x2) and c (8x2) reconstructed surfaces. We will also report our studies on adsorption of Li in the most symmetric sites of c (8x2) surface. Details of the chemisorption process, such as the adsorption energies, adatom separation distances, charge distributions, density of states, will be presented and compared with available results in the literature. Possible changes in the InSb surface due to Li adsorption will also be discussed in detail. ^*Work supported, in part, by the Welch Foundation, Houston, Texas (Grant No. Y-1525). ^1 Gaussian03, M. J. Frisch et al., Gaussian Inc., Pittsburgh, PA.

  1. First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Yong; Xie, Zhong-Xiang; Yu, Xia; Wang, Hai-Bin; Deng, Yuan-Xiang; Ning, Feng

    2016-08-01

    Using first-principle calculations with density functional theory, we investigated the modification of electronic properties in zinc-blende (ZB) and wurtzite (WZ) InSb nanowires (NWs) grown along the [111] and [0001] directions for different size, different surface coverage and different mechanical strain. The results show that before the surface passivation, ZBNWs and WZNWs exhibit the metallic character and the semiconductor character, respectively. WZNWs show a crossover from a direct to an indirect as diameter decreases. After the surface passivation, both ZBNWs and WZNWs are found to be direct-gap character. The electronic band structure shows a significant response to changes in surface passivation with pseudo hydrogen and halogen. The band structure with mechanical strain is strongly dependent on the crystal orientation and the NW diameter. In ZBNWs, compressive strain induces the indirect band gap character, whereas tensile strain can not form it. WZNWs have various strain dependence in that both compressive and tensile strain make InSb show a direct band gap character. A brief analysis of these results is given.

  2. The relationship between electrical and structural characteristics of CdTe and CdMnTe layers grown on InSb

    NASA Astrophysics Data System (ADS)

    Ashenford, D.; Hogg, J. H. C.; Lunn, B.; Scott, C. G.

    1991-06-01

    CdTe and CdMnTe layers with thickness in the range 1-2 μm have been grown by MBE on (001) InSb substrates. Measurements of the free-carrier concentration as a function of depth through these layers have revealed non-unformities attributed to the presence of extended defects arising from the relief of lattice strain resulting from the epilayer-substrate lattice mismatch. Evidence for the existence of such structural non-uniformity has been provided by DCXRD rocking curve measurements. Detailed analysis of these curves also indicates the presence of a thin interfacial layer of a different phase. The use of an excess Cd flux during growth has been found to lead to increased and more uniform carrier densities in both undoped and In doped layers.

  3. Substrate heating effect on the growth of a CdTe film on an InSb substrate by vacuum evaporation

    NASA Astrophysics Data System (ADS)

    Jiann-Ruey, Chen; Mau-Phon, Houng; Fenq-Lin, Jenq; Chien-Shyong, Fang; Wan-Sun, Tse

    1991-07-01

    Epitaxial CdTe thin films were grown on the (111) oriented InSb substrate by vacuum evaporation, with the substrate kept at 190-225°C during the film deposition. The chamber pressure during film deposition was at 3.5 × 10-6 mbar. X-ray diffraction was used to determine the film structure, while the full width at half maximum (FWHM) of the X-ray diffraction peak was used to examine the crystallinity of the as-deposited films. The film morphology was observed by the scanning electron microscope (SEM), and the film composition was determined by electron probe microanalysis (EPMA). The film quality was examined by infrared transmission spectroscopy. Results indicate that the quality of the grown CdTe films was improved with the higher substrate temperature during the film deposition.

  4. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds

    NASA Astrophysics Data System (ADS)

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H.; Kühne, Thomas D.; Bernasconi, Marco

    2016-05-01

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase.

  5. Influence of the exchange and correlation functional on the structure of amorphous InSb and In3SbTe2 compounds.

    PubMed

    Gabardi, Silvia; Caravati, Sebastiano; Los, Jan H; Kühne, Thomas D; Bernasconi, Marco

    2016-05-28

    We have investigated the structural, vibrational, and electronic properties of the amorphous phase of InSb and In3SbTe2 compounds of interest for applications in phase change non-volatile memories. Models of the amorphous phase have been generated by quenching from the melt by molecular dynamics simulations based on density functional theory. In particular, we have studied the dependence of the structural properties on the choice of the exchange-correlation functional. It turns out that the use of the Becke-Lee-Yang-Parr functional provides models with a much larger fraction of In atoms in a tetrahedral bonding geometry with respect to previous results obtained with the most commonly used Perdew-Becke-Ernzerhof functional. This outcome is at odd with the properties of Ge2Sb2Te5 phase change compound for which the two exchange-correlation functionals yield very similar results on the structure of the amorphous phase. PMID:27250317

  6. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy

    SciTech Connect

    DiNezza, Michael J.; Liu, Shi; Kirk, Alexander P.; Zhang, Yong-Hang; Zhao, Xin-Hao

    2013-11-04

    CdTe/MgCdTe double heterostructures (DHs) are grown on InSb substrates using molecular beam epitaxy and reveal strong photoluminescence with over double the intensity of a GaAs/AlGaAs DH with an identical layer structure design grown on GaAs. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a Shockley-Read-Hall recombination lifetime of 86 ns, which is more than one order of magnitude longer than that of typical polycrystalline CdTe films. These findings indicate that monocrystalline CdTe/MgCdTe DHs effectively reduce surface recombination, have limited nonradiative interface recombination, and are promising for solar cells that could reach power conversion efficiencies similar to that of GaAs.

  7. Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

    NASA Astrophysics Data System (ADS)

    Çakan, Aslı; Sevik, Cem; Bulutay, Ceyhun

    2016-03-01

    The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.

  8. Influence of the carrier mobility distribution on the Hall and the Nernst effect measurements in n-type InSb

    NASA Astrophysics Data System (ADS)

    Madon, B.; Wegrowe, J.-E.; Drouhin, H.-J.; Liu, X.; Furdyna, J.; Khodaparast, G. A.

    2016-01-01

    In this study, we report magneto-resistance measurements on an n-doped InSb film, to separate the contributions of the electrical currents from the heat currents. We have demonstrated a prototype for a magnetic field sensor which is powered by heat currents and does not require any electrical current. We fabricated two Hall bars, where a low frequency (f = 0.05 Hz) AC current, was applied between the two contacts in one of the Hall bars. Separating the f and 2f components of the voltage measured across the second Hall bar was used to distinguish between the electrical and the heat contributions to the electron currents. Our observations can be modeled using a Gaussian distribution of mobility within the sample.

  9. High resolution 1280×1024, 15 μm pitch compact InSb IR detector with on-chip ADC

    NASA Astrophysics Data System (ADS)

    Nesher, O.; Pivnik, I.; Ilan, E.; Calalhorra, Z.; Koifman, A.; Vaserman, I.; Oiknine Schlesinger, J.; Gazit, R.; Hirsh, I.

    2009-05-01

    Over the last decade, SCD has developed and manufactured high quality InSb Focal Plane Arrays (FPAs), which are currently used in many applications worldwide. SCD's production line includes many different types of InSb FPA with formats of 320x256, 480x384 and 640x512 elements and with pitch sizes in the range of 15 to 30 μm. All these FPAs are available in various packaging configurations, including fully integrated Detector-Dewar-Cooler Assemblies (DDCA) with either closed-cycle Sterling or open-loop Joule-Thomson coolers. With an increasing need for higher resolution, SCD has recently developed a new large format 2-D InSb detector with 1280x1024 elements and a pixel size of 15μm. The InSb 15μm pixel technology has already been proven at SCD with the "Pelican" detector (640x512 elements), which was introduced at the Orlando conference in 2006. A new signal processor was developed at SCD for use in this mega-pixel detector. This Readout Integrated Circuit (ROIC) is designed for, and manufactured with, 0.18 μm CMOS technology. The migration from 0.5 to 0.18 μm CMOS technology supports SCD's roadmap for the reduction of pixel size and power consumption and is in line with the increasing demand for improved performance and on-chip functionality. Consequently, the new ROIC maintains the same level of performance and functionality with a 15 μm pitch, as exists in our 20 μm-pitch ROICs based on 0.5μm CMOS technology. Similar to Sebastian (SCD ROIC with A/D on chip), this signal processor also includes A/D converters on the chip and demonstrates the same level of performance, but with reduced power consumption. The pixel readout rate has been increased up to 160 MHz in order to support a high frame rate, resulting in 120 Hz operation with a window of 1024×1024 elements at ~130 mW. These A/D converters on chip save the need for using 16 A/D channels on board (in the case of an analog ROIC) which would operate at 10 MHz and consume about 8Watts A Dewar has been

  10. Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

    NASA Astrophysics Data System (ADS)

    He, J. L.; Hu, W. D.; Ye, Z. H.; Lv, Y. Q.; Chen, X. S.; Lu, W.

    2016-09-01

    The design of a reflection-type subwavelength microstructure has been numerically investigated to concentrate incident light onto pixels for improved photoresponse of InSb infrared focal-plane arrays. Compared with traditional microlenses placed on top of the detector substrate, this reflection-type microstructure is better suited for extremely small pixel pitches. The structure is simulated using a joint numerical method combining the finite-difference time-domain method based on Maxwell's curl equations and the finite-element method based on the Poisson and continuity equations. The results show that this advanced design could effectively improve device response without sacrificing crosstalk. The optimal structure parameters are obtained theoretically, with response increase of approximately 100%.

  11. Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays

    NASA Astrophysics Data System (ADS)

    He, J. L.; Hu, W. D.; Ye, Z. H.; Lv, Y. Q.; Chen, X. S.; Lu, W.

    2016-05-01

    The design of a reflection-type subwavelength microstructure has been numerically investigated to concentrate incident light onto pixels for improved photoresponse of InSb infrared focal-plane arrays. Compared with traditional microlenses placed on top of the detector substrate, this reflection-type microstructure is better suited for extremely small pixel pitches. The structure is simulated using a joint numerical method combining the finite-difference time-domain method based on Maxwell's curl equations and the finite-element method based on the Poisson and continuity equations. The results show that this advanced design could effectively improve device response without sacrificing crosstalk. The optimal structure parameters are obtained theoretically, with response increase of approximately 100%.

  12. Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

    SciTech Connect

    Tuominen, M. E-mail: pekka.laukkanen@utu.fi; Lång, J.; Dahl, J.; Yasir, M.; Mäkelä, J.; Punkkinen, M. P. J.; Laukkanen, P. E-mail: pekka.laukkanen@utu.fi; Kokko, K.; Kuzmin, M.; Osiecki, J. R.; Schulte, K.

    2015-01-05

    The pre-oxidized crystalline (3×1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3×1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3×1)-O consists of In atoms with unexpected negative (between −0.64 and −0.47 eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.

  13. Digital 640x512 / 15μm InSb detector for high frame rate, high sensitivity, and low power applications

    NASA Astrophysics Data System (ADS)

    Markovitz, T.; Pivnik, I.; Calahorra, Z.; Ilan, E.; Hirsh, I.; Zeierman, E.; Eylon, M.; Kahanov, E.; Kogan, I.; Fishler, N.; Brumer, M.; Lukomsky, I.

    2011-06-01

    Pelican-D is a new digital 640x512 / 15μm InSb detector developed by SCD to serve a number of applications. The Readout Integrated Circuit (ROIC) has a digital output which can be calibrated to a signal resolution in the 13-15 bit range. Besides the digital output, the detector has some additional advantages over other MWIR detectors of the same format. The high frequency of data output, which supports a full image frame rate of over 300Hz, is very useful in systems that track fast evolving events such as Missile Warning Systems (MWS), Missile Seekers and some Thermographic applications. Another important characteristic of the detector is related to an operation mode with relatively low readout noise. This mode of operation is especially beneficial in applications where the background radiation is low such as in long range surveillance systems. For imaging systems where very high sensitivity is required, the ROIC can be coupled to an epi-InSb detector array and have a dark current at 77K that is lower by a factor of 15 with respect to standard InSb. Alternatively, Pelican-D with epi-InSb can be operated at 95K with a standard dark current and sensitivity. Such an elevated operating temperature enables the use of cryogenic coolers of relatively low size, weight and power for applications such as Hand-held cameras, miniature gimbaled systems, and light UAVs. In this work we present in detail the characteristic performance of the new detector and its applications.

  14. Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

    NASA Astrophysics Data System (ADS)

    Shimoida, Kenta; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Ogawa, Matsuto

    2013-03-01

    Ballistic performances of InAs, InSb, and GaSb nanowire field-effect transistors (NWFETs) were theoretically investigated. We found that InAs and InSb NWFETs exhibit similar device performances due to 1D band structure effects. Furthermore, although these In-based NWFETs suffer from the density-of-states (DOS) bottleneck, a lower power switching is expected. On the other hand, GaSb NWs have multiple energy subbands at conduction band minima, as a result of the projection of L-valleys which thus improves the DOS. In particular, a <110>-oriented GaSb NW has an improved DOS and a high electron velocity simultaneously, and thus, it could be a strong competitor to In-based NWFETs.

  15. Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Chen, Y. C.; Bhattacharya, P. K.; Tsukamoto, S.

    1989-01-01

    Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

  16. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S. Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  17. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

    NASA Astrophysics Data System (ADS)

    Lu, Jing; DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi; Zhang, Yong-Hang; Kovacs, Andras; Dunin-Borkowski, Rafal E.; Smith, David J.

    2016-04-01

    A series of three CdTe/MgxCd1-xTe (x~0.24) double heterostructures grown by molecular beam epitaxy on InSb (001) substrates at temperatures in the range of 235-295 °C have been studied using conventional and advanced electron microscopy techniques. Defect analysis based on bright-field electron micrographs indicates that the structure grown at 265 °C has the best structural quality of the series, while structures grown at 30 °C lower or higher temperature show highly defective morphology. Geometric phase analysis of the CdTe/InSb interface for the sample grown at 265 °C reveals minimal interfacial elastic strain, and there is no visible evidence of interfacial defect formation in aberration-corrected electron micrographs of this particular sample. Such high quality CdTe epitaxial layers should provide the basis for applications such as photo-detectors and multi-junction solar cells.

  18. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  19. Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs

    SciTech Connect

    Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Jung, K.B.; Pearton, S.J.; Shul, R.J.

    1998-12-17

    The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.

  20. GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence

    NASA Astrophysics Data System (ADS)

    Chen, Xiren; Xing, Junliang; Zhu, Liangqing; Zha, F.-X.; Niu, Zhichuan; Guo, Shaoling; Shao, Jun

    2016-05-01

    GaInSb/InAs/AlSb quantum wells (QWs) with typical InSb- and GaAs-like interfaces (IFs) are investigated by temperature- and magnetic field-dependent photoluminescence (PL), respectively. The results show that (i) as temperature rises the PL energy of the QWs with either InSb- or GaAs-like IFs blueshifts slightly below 50 K but redshifts above and broadens rapidly, and the mechanism behind this is correlated to the IF roughness-related layer thickness fluctuation equivalent to a localization energy of about 9.5 meV; (ii) the PL diminishes monotonously as magnetic field rises except for the delocalized PL process of the InSb-like IF QWs, and the magnetic field-induced PL quenching is attributed to the IF roughness-induced electron-hole separation in the type-II QWs; and (iii) the magnetic field-dependent PL energy follows a typical excitonic diamagnetic shift for both located and dislocated states, and the deduced exciton binding energy, reduced effective mass, and average wavefunction extent are insensitive to the IF type. Comparison of different IF-type GaInSb/InAs QWs indicates that while the PL of the InSb-like IF sample contains type-I component as the IF confines heavy holes and acts as pseudo-barrier for electrons, leading to the coexistence of electrons and holes at the IFs, the IF-type does not affect the carrier localization and the in-plane excitonic behavior obviously.

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    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-10

    ... exemption from the vision requirements (64 FR 27027; 64 FR 51568; 66 FR 48504; 68 FR 54775; 69 FR 64806; 70 FR 2705; 70 FR 48797; 70 FR 53412; 70 FR 61493; 72 FR 1054; 72 FR 52422; 72 FR 58362; 72 FR 67344; 72..., 2008 (73 FR 3316), or you may visit......

  7. 77 FR 17115 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 10471; 67 FR 17102; 67 FR 19798; 68 FR 61857; 68 FR 74699; 68 FR 75715; 69 FR 10503; 69 FR 17267; 69 FR 19611; 70 FR 57353;......

  8. 75 FR 59327 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-27

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... exemption from the vision requirements (65 FR 33406; 65 FR 57234; 67 FR 57266; 69 FR 52741; 71 FR 53489; 73 FR 61925; 65 FR 78256; 66 FR 16311; 69 FR 33997; 69 FR 61292; 71 FR 55820; 69 FR......

  9. 77 FR 46153 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-02

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... exemption from the vision requirements (63 FR 66227; 64 FR 16520; 71 FR 14567; 71 FR 30228; 73 FR 28187; 73 FR 35195; 73 FR 35196; 73 FR 35197; 73 FR 35198; 73 FR 35199; 73 FR 35200; 73 FR......

  10. 77 FR 27849 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-11

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... exemption from the vision requirements (64 FR 40404; 64 FR 66962; 67 FR 10471; 67 FR 10475; 67 FR 19798; 67 FR 15662; 67 FR 37907; 69 FR 19611; 69 FR 26206; 71 FR 26602; 73 FR 27017; 75 FR......

  11. 76 FR 15360 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-21

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... exemption from the vision requirements (63 FR 66226; 64 FR 16517; 65 FR 20245; 65 FR 57230; 65 FR 66286; 65 FR 78256; 66 FR 13825; 66 FR 16311; 66 FR 17994; 67 FR 57226; 67 FR 76439; 68 FR......

  12. 77 FR 17107 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... exemption from the vision requirements (64 FR 27027; 64 FR 40404; 64 FR 51568; 64 FR 66962; 64 FR 54948; 64 FR 68195; 65 FR 159; 65 FR 20251; 66 FR 66969; 67 FR 10475; 67 FR 17102; 68 FR 52811;......

  13. 75 FR 13653 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-22

    ... for obtaining an exemption from the vision requirements (67 FR 27027; 64 FR 51568; 67 FR 10475; 69 FR 8260; 71 FR 16410; 73 FR 28188; 64 FR 40404; 64 FR 66962; 66 FR 66969; 68 FR 69432; 71 FR 6825; 73 FR... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476).......

  14. 78 FR 67460 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-12

    ... for obtaining an exemption from the vision requirements (71 FR 5105; 71 FR 19600; 72 FR 39879; 72 FR 52419; 72 FR 58362; 72 FR 67344; 73 FR 52456; 74 FR 41971; 74 FR 53581; 74 FR 57553; 75 FR 25917; 75 FR... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief,......

  15. 78 FR 57679 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-19

    ... for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 66962; 65 FR 78256; 66 FR 16311; 67 FR 17102; 68 FR 13360; 70 FR 14747; 70 FR 17504; 70 FR 25878; 70 FR 30997; 72 FR 8417; 72 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER......

  16. 78 FR 64280 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-28

    ... for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 40404; 64 FR 51568; 64 FR 66962; 66 FR 63289; 67 FR 68719; 68 FR 2629; 68 FR 52811; 68 FR 61860; 68 FR 64944; 70 FR 48797; 70 FR... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief,......

  17. 78 FR 56993 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-16

    ... for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 66 FR 30502; 66 FR 33990; 66 FR 41654; 68 FR 10300; 68 FR 19598; 68 FR 33570; 68 FR 44837; 70 FR 2701; 70 FR 7546; 70 FR... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR......

  18. 77 FR 3554 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-24

    ... obtaining an exemption from the vision requirements (66 FR 53826; 66 FR 66966; 68 FR 61857; 68 FR 69434; 68 FR 75715; 70 FR 57353; 70 FR 71884; 70 FR 72689; 71 FR 646; 71 FR 4632; 71 FR 6825; 72 FR 71998; 73... Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR......

  19. 75 FR 27621 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-17

    ... exemption from the vision requirements (64 FR 40404; 64 FR 66962; 67 FR 10475; 69 FR 26206; 71 FR 26601; 73 FR 27017; 67 FR 10471; 67 FR 19798; 69 FR 19611; 71 FR 26601; 67 FR 15662; 67 FR 37907; 69 FR 26206... Privacy Act Statement in the Federal Register published on April 11, 2000 (65......

  20. 78 FR 51269 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-20

    ... for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 33990; 68 FR 35772; 70 FR 33937; 72 FR 21313; 72 FR 32703; 72 FR 32705; 74 FR 26461; 74 FR 26464; 74 FR 34630; 75 FR 72863; 76 FR... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief,......

  1. 76 FR 64171 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-17

    ... for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 66 FR 30502; 66 FR 41654; 68 FR 54775; 67 FR 17102; 68 FR 52811; 68 FR 61860; 70 FR 61165;71 FR 63379; 72 FR 1050; 72 FR... on January 17, 2008 (73 FR 3316), or you may visit......

  2. 75 FR 1450 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... exemption from the vision requirements (66 FR 53826; 66 FR 66966; 68 FR 69434; 71 FR 6825; 73 FR 6246; 70 FR 57353; 70 FR 72689; 70 FR 71884; 71 FR 4632; 72 FR 58362; 72 FR 67344). Each of these 6 applicants has... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR......

  3. 75 FR 44050 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-27

    ... Register published on April 11, 2000 (65 FR 19476). This information is also available at http://www... for obtaining an exemption from the vision requirements (63 FR 66226; 64 FR 16517; 65 FR 78256; 66 FR 16311; 68 FR 13360; 70 FR 12265; 72 FR 27624; 67 FR 15662; 67 FR 37907; 69 FR 26206; 71 FR 26601; 73......

  4. 78 FR 63292 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-23

    ... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION... for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 30502; 66 FR 66 33990; 66 FR 41654; 68 FR 35772; 68 FR 37197; 68 FR 44837; 68 FR 48989; 70 FR 33937; 70 FR 41811; 70 FR......

  5. 78 FR 26106 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-03

    ... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief, Medical Programs... for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 65 FR 78256; 66 FR 16311; 67 FR 46016; 67 FR 57267; 67 FR 76439; 68 FR 10298; 68 FR 13360; 69 FR 33997; 69 FR 61292; 69......

  6. 77 FR 52389 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-29

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... for obtaining an exemption from the vision requirements (65 FR 20245; 65 FR 33406; 65 FR 57230; 65 FR 57234; 67 FR 46016; 67 FR 57266; 67 FR 57267; 69 FR 17263; 69 FR 31447; 69 FR 51346; 69 FR 52741;......

  7. 76 FR 53708 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-29

    ... for obtaining an exemption from the vision requirements (70 FR 17504; 70 FR 30997; 72 FR 8417; 72 FR 36099; 72 FR 40362; 72 FR 52419; 72 FR 39879; 74 FR 34394; 74 FR 37295; 74 FR 41971; 74 FR 48343). Each... on January 17, 2008 (73 FR 3316), or you may visit......

  8. 76 FR 44652 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-26

    ... for obtaining an exemption from the vision requirements (63 FR 66226; 64 FR 16517, 65 FR 66286; 66 FR 13825; 66 FR 30502; 66 FR 33990; 66 FR 41654; 66 FR 41656; 68 FR 10300; 68 FR 19598; 68 FR 33570; 68 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73......

  9. 75 FR 5545 - Explosives

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-03

    ... its Explosives and Blasting Agents Standard at 29 CFR 1910.109 (36 FR 10553-10562). OSHA based the... revisions to the standard (37 FR 6577, 57 FR 6356, and 63 FR 33450). On July 29, 2002, the Institute of... revision (72 FR 18792). On July 17, 2007, however, OSHA closed the comment period, stating that it...

  10. 77 FR 67816 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-14

    ... FR 1379, FR 2436, FR 3036, FR 4001, by any of the following methods: Agency Web site: http://www... Appraisal Complaint Form. Agency form number: FR 1379a, FR 1379b, FR 1379c, and FR 1379d. OMB control number.... Estimated annual reporting hours: FR 1379a: 116 hours; FR 1379b: 167 hours; FR 1379c: 1,351 hours;......

  11. 77 FR 36338 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-18

    ... entry conditions for obtaining an exemption from the vision requirements (66 FR 53826; 66 FR 66966; 67 FR 46016; 67 FR 57627; 68 FR 37197; 68 FR 48989; 69 FR 17263; 69 FR 17269; 69 FR 31447; 69 FR 31449... Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or...

  12. 78 FR 11731 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-19

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (71 FR 63379; 72 FR 1050; 72 FR 180; 72 FR 9397; 73 FR 75803; 74 FR 6209; 74 FR 6211; 74 FR 980; 75 FR 72863; 76 FR 2190; 76 FR 4413; 76 FR 4414; 76 FR......

  13. 76 FR 40052 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... Reinvestment Act of 2009). Timetable: Action Date FR Cite NPRM 07/14/10 75 FR 40867 NPRM Comment Period End 09...: Action Date FR Cite Interim Final Rule 06/17/10 75 FR 34538 Interim Final Rule Effective........ 07/12/10... opioid treatment programs. Timetable: Action Date FR Cite NPRM 06/19/09 74 FR 29153 NPRM Comment...

  14. Influence of Bi-related impurity states on the bandgap and spin-orbit splitting energy of dilute III-V-Bi alloys: InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix

    NASA Astrophysics Data System (ADS)

    Samajdar, D. P.; Dhar, S.

    2016-01-01

    Valence Band Anticrossing (VBAC) Model is used to calculate the changes in band structure of Bi containing alloys such as InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix due to the incorporation of dilute concentrations of bismuth. The coupling parameter CBi which gives the magnitude of interaction of Bi impurity states with the LH, HH and SO sub bands in VBAC depends on the increase in the HH/LH related energy level EHH/LH+, location of the Bi related impurity level EBi and valence band offset ΔEVBM between the endpoint compounds in the corresponding III-V-Bi. The reduction in band gap as well as the enhancement of the spin-orbit splitting energy is well explained using this model and the calculated results are compared with the results of Virtual Crystal Approximation (VCA) and Density Functional Theory (DFT) calculations, as well as with the available experimental data and are found to have good agreement. The incorporation of Bi mainly perturbs the valence band due to the interaction of the Bi impurity states with the HH, LH and SO bands. The lowering of the conduction band minimum (CBM) due to VCA is added with the upward movement of the HH/LH bands to get the total reduction in band gap for the bismides. The valence band shifts of 31.9, 32.5, 20.8 and 12.4 meV/at%Bi for InP1-xBix, InAs1-xBix, InSb1-xBix and GaSb1-xBix respectively constitute 65, 76, 59 and 31% of the total band gap reduction and the rest is the contribution of the conduction band shift. The spin-orbit splitting energy also shows significant increase with the maximum change in InPBi and the minimum in InSbBi. The same is true for Ga containing bismides if we make a comparison with the available values for GaAsBi and GaPBi with that of GaSbBi. It has also been observed that the increase in splitting energy is greater in case of the bismides such as InAsBi, InPBi and GaAsBi than the bismides such as InSbBi and GaSbBi with the parent substrates having higher values of splitting energy. This may

  15. 75 FR 1451 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-11

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 68 FR 10300; 70 FR 41811; 72 FR 52422; 66 FR 53826; 66 FR 66966; 68 FR 69434; 71 FR... on April 11, 2000 (65 FR 19476). This information is also available at...

  16. 75 FR 22424 - Avalotis Corp.; Grant of a Permanent Variance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-28

    ... proposed alternatives (see 38 FR 8545 (April 3, 1973), 44 FR 51352 (August 31, 1979), 50 FR 20145 (May 14, 1985), 50 FR 40627 (October 4, 1985), 52 FR 22552 (June 12, 1987), 68 FR 52961 (September 8, 2003), 70 FR 72659 (December 6, 2005), 71 FR 10557 (March 1, 2006), 72 FR 6002, 74 FR 34789 (July 17,...

  17. 76 FR 27054 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-10

    ... Membership in the Federal Reserve System. Agency form number: FR 2083, 2083A, 2083B, and 2083C. OMB control... Federal Reserve Bank Stock. Agency form number: FR 2030, FR 2030a, FR 2056, FR 2086, FR 2086a, FR 2087... before July 11, 2011. ADDRESSES: You may submit comments, identified by FR H-6; FR 2030, FR......

  18. 78 FR 24300 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-24

    ... will not compromise safety. The Agency has concluded that granting these exemption renewals will... December 29, 2010 (75 FR 82132), or you may visit http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876... FR 32183; 71 FR 41310; 72 FR 12666; 72 FR 25831; 73 FR 61925; 74 FR 11988; 74 FR 15586; 74 FR......

  19. 77 FR 23800 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-20

    ..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR FURTHER... for obtaining an exemption from the vision requirements (73 FR 16950; 73 FR 6242; 74 FR 65842; 75 FR 14656; 75 FR 22176; 75 FR 28684; 75 FR 9477; 75 FR 9478; 75 FR 9480). Each of these 11 applicants...

  20. 75 FR 80887 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-23

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (67 FR 68719; 68 FR 10301; 68 FR 2629; 69 FR 64806; 69 FR 71100; 70 FR 2705; 72 FR 1053; 72 FR 1056; 73 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316),......

  1. 76 FR 49769 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-11

    ... 11, 2011. ADDRESSES: You may submit comments, identified by FR Y-10, FR Y-10E, FR Y-6, and FR Y-7, by... Holding Companies, and Annual Report of Foreign Banking Organizations. Agency form number: FR Y-10, FR Y-6, and FR Y-7. OMB control number: 7100-0297. Frequency: FR Y-10: Event-generated; FR Y-6 and FR...

  2. 76 FR 66123 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-25

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (68 FR 52811; 70 FR 61165; 72 FR 39879; 72 FR 52419; 72 FR 54971; 72 FR 58359; 74 FR 419171; 74 FR 43217; FR 74... on January 17, 2008 (73 FR 3316), or you may visit......

  3. 76 FR 12216 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-04

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 46016; 67 FR 57267; 67 FR 68719; 68 FR 13360; 68 FR 2629; 69 FR 51346; 70 FR... in the Federal Register on January 17, 2008 (73 FR 3316), or you may visit...

  4. 76 FR 44653 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-26

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 33990; 68 FR 35772; 70 FR 30999; 70 FR 33937; 70 FR 46567; 72 FR 32705; 72 FR 40359; 74 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  5. 76 FR 9861 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 45817; 65 FR 66286; 65 FR 77066; 66 FR 13825; 68 FR 10300; 70 FR 7546; 71 FR 14566; 71 FR 30227; 72 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  6. 76 FR 9865 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 20245; 65 FR 57230; 67 FR 57266; 69 FR 52741; 71 FR 55820; 71 FR 63379; 72 FR 180; 72 FR 9397; 72 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  7. 76 FR 12215 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-04

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 66226; 64 FR 16517; 65 FR 45817; 65 FR 66286; 65 FR 77066; 65 FR 78256; 66 FR 13825; 66 FR 16311; 67 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  8. 75 FR 50799 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 55962; 67 FR 17102; 69 FR 51346; 71 FR 50970; 73 FR 61927; 64 FR 54948; 65 FR 159; 67 FR... System published in the Federal Register on January 17, 2008 (73 FR 3316), or you may visit...

  9. 76 FR 70210 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-10

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (66 FR 30502; 66 FR 41654; 67 FR 76439; 68 FR 10298; 70 FR 41811; 70 FR 57353; 70 FR 72689; 72 FR 39879; 72 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316),......

  10. 77 FR 40946 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-11

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568; 64 FR 68195; 65 FR 20251; 67 FR 15662; 67 FR 37907; 67 FR 38311; 68 FR 10302; 68 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, ] 2008 (73 FR......

  11. 76 FR 4413 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-25

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 45817; 65 FR 77066; 68 FR 1654; 69 FR 53493; 69 FR 71098; 69 FR 61292; 69 FR 62742; 69 FR 33997; 71 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  12. 76 FR 25762 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 65 FR 66286; 65 FR 78256; 66 FR 13825; 66 FR 16311; 67 FR 46016; 67 FR 57267; 67 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  13. 75 FR 27623 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568; 66 FR 63289; 69 FR 8260; 71 FR 16410; 73 FR 78186; 64 FR 68195; 65 FR 20251; 67 FR... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This......

  14. 76 FR 29026 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-19

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 76439; 68 FR 10298; 68 FR 13360; 68 FR 19598; 68 FR 33570; 70 FR 25878; 72 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  15. 78 FR 76705 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-18

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 40404; 64 FR 51568; 64 FR 54948; 64 FR 66962; 65 FR 159; 66 FR 48504; 66 FR 66969; 68 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  16. 78 FR 57677 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-19

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 78256; 66 FR 16311; 66 FR 17743; 66 FR 33990; 68 FR 13360; 68 FR 19598; 68 FR 33570; 68 FR 35772; 70 FR... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief, Medical......

  17. 75 FR 64396 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-19

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 67 FR 57266; 69 FR 52741; 71 FR 53489; 73 FR 65009; 73 FR 63047; 71 FR 32183; 71 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  18. 75 FR 19674 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-15

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 17102; 69 FR 17267; 71 FR 16410; 73 FR 28188; 68 FR 74699; 69 FR 10503; 71 FR... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This......

  19. 75 FR 27622 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 66 FR 66969; 68 FR 69432; 71 FR 644; 73 FR 27014; 64 FR 68195; 65 FR 20251; 67 FR... on April 11, 2000 (65 FR 19476). This information is also available at...

  20. 76 FR 21796 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-18

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 78256; 66 FR 16311; 67 FR 76439; 68 FR 10298; 68 FR 10301; 68 FR 13360; 68 FR 19596; 69 FR 33997; 69 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  1. 76 FR 4414 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-25

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 30285; 63 FR 54519; 67 FR 68719; 68 FR 2629; 68 FR 1654; 69 FR 61292; 69 FR 33997; 69 FR 71098; 69 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  2. 76 FR 79760 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 54948; 64 FR 66962; 65 FR 159; 66 FR 66969; 68 FR 69432; 70 FR 57353; 70 FR 72689; 71 FR... on January 17, 2008 (73 FR 3316), or you may visit...

  3. 78 FR 76704 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-18

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (70 FR 57353; 70 FR 72689; 72 FR 62897; 72 FR 67340; 73 FR 1395; 74 FR 60021; 74 FR 65845; 76 FR 70210; 76 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  4. 78 FR 65032 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-30

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 33990; 68 FR 35772; 70 FR 33937; 72 FR 32705; 74 FR 26464; 76 FR 34135; 76 FR 64169; 76 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  5. 77 FR 74730 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 65 FR 20246; 65 FR 45817; 65 FR 57230; 65 FR 77066; 66 FR 66969; 67 FR 46018; 67 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  6. 77 FR 10606 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (67 FR 68719; 68 FR 2629; 70 FR 7545; 71 FR 4194; 71 FR 13450; 72 FR 39879; 72 FR 40362; 72 FR 52419; 73 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  7. 78 FR 30954 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-23

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 76439; 68 FR 10298; 68 FR 13360; 68 FR 19598; 68 FR 33570; 70 FR 25878; 71 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  8. 77 FR 26816 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-07

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 54948; 64 FR 68195; 65 FR 159; 65 FR 20251; 66 FR 66969; 67 FR 10471; 67 FR 17102; 67 FR 19798; 68 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316),......

  9. 78 FR 68137 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-13

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 68195; 66 FR 30502; 68 FR 52811; 70 FR 48797; 71 FR 63379; 72 FR 39879; 72 FR 8417; 72 FR...) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT:......

  10. 77 FR 29447 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-17

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568; 64 FR 68195; 65 FR 20245; 65 FR 20251; 65 FR 45817; 65 FR 57230; 65 FR 77066; 66 FR... Federal Register on January 17, 2008 (73 FR 3316), or you may visit......

  11. 77 FR 40271 - Pasteuria

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-09

    ... February 4, 2011 (76 FR 6465) (FRL-8858- 7), EPA issued a notice pursuant to FFDCA section 408(d)(3), 21 U... Register of December 28, 1994 (59 FR 66740) (FRL-4923-4), June 30, 2010 (75 FR 37734) (FRL-8831-9), and February 15, 2012 (77 FR 8736) (FRL-9337-2) for final rules that established tolerance exemptions...

  12. 75 FR 21823

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Date FR Cite ANPRM 12/00/10 Regulatory Flexibility Analysis Required: Undetermined Government Levels...: Action Date FR Cite NPRM 12/00/10 Regulatory Flexibility Analysis Required: Undetermined Government..., 202, 205, 211, 301, 302, and 303 of EO 11246, as amended; 30 FR 12319; 32 FR 14303, as amended by...

  13. 75 FR 21749

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... by the Committee in extending quota- and duty-free treatment. Timetable: Action Date FR Cite NPRM To...: Action Date FR Cite NPRM 05/00/10 NPRM Comment Period End 07/00/10 Regulatory Flexibility Analysis... reduction schedule to meet the goals of the ISFMP. Timetable: Action Date FR Cite ANPRM 05/10/05 70 FR...

  14. 75 FR 21955

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Policy Statement Number 87-2, ``Developing and Reviewing Government Regulations,'' 54 FR 35231 (September 18, 1987), as amended by IRPS 03-2, 68 FR 31949 (May 29, 2003), which sets out NCUA's policy and... and conspicuous. Timetable: Action Date FR Cite ANPRM 12/30/03 68 FR 75164 ANPRM Comment Period End...

  15. 75 FR 21867

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ...) community. Timetable: Action Date FR Cite NPRM 04/00/10 Regulatory Flexibility Analysis Required: Yes Agency..., OTS, NCUA, and Farm Credit Administration. Timetable: Action Date FR Cite NPRM 06/09/09 74 FR 27386... contained in these rules as of December 1, 2011. Completed: Reason Date FR Cite Final Action 12/01/09 74...

  16. 75 FR 21885

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... FR Cite Interim Final Rule 02/01/07 72 FR 4649 Interim Final Rule Comment Period End 04/02/07 Final... of that Federal supply classification group). Timetable: Action Date FR Cite Interim Final Rule 09/19/08 73 FR 54334 Interim Final Rule Comment Period End 11/18/08 Final Rule 06/00/10...

  17. 77 FR 60010 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-01

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (69 FR 33997; 69 FR 61292; 71 FR 32183; 71 FR 41310; 71 FR 55820; 73 FR 38497; 73 FR 48271; 73 FR 46973; 73 FR 54888; 73 FR 65009; 75 FR 39725; 75 FR 44050; 74......

  18. 75 FR 21903

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... Timetable: Action Date FR Cite NPRM 07/26/96 61 FR 39107 Order 07/26/96 61 FR 39084 NPRM Comment Period End 09/16/96 Notice to Refresh Record 03/27/03 68 FR 14939 Comment Period End 05/27/03 NPRM 10/15/04 69 FR 61184 Next Action Undetermined Regulatory Flexibility Analysis Required: Yes Agency Contact:...

  19. 75 FR 21899

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... The rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite NPRM 03/10/08 73 FR.... This rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite NPRM 04/13/09 74 FR... September 30, 1993. This rule is not a major rule under 5 U.S.C. 804. Timetable: Action Date FR Cite...

  20. 78 FR 75679 - Position Limits for Derivatives

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-12

    ...\\ Id. at 269. \\29\\ See 3 FR 3145, Dec. 24, 1938. \\30\\ See 2 FR 2460, Nov. 12, 1937. \\31\\ See 4 FR 3903, Sep. 14, 1939; 5 FR 3198, Aug. 28, 1940. \\32\\ See 16 FR 321, Jan. 12, 1951; 16 FR 8106, Aug. 16, 1951; see also 17 FR 6055, Jul. 4, 1952 (notice of hearing regarding proposed position limits for...

  1. 78 FR 77352 - Small Business Policy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-23

    ... process. Background NASA's small business policy, published August 17, 1993 [58 FR 43554], was established..., Small Business Programs [62 FR 36707, July 9, 1997, as amended at 64 FR 25215, May 11, 1999; 65 FR 38777, June 22, 2000; 65 FR 58932, Oct. 3, 2000; 67 FR 53947, Oct. 23, 2001; 69 FR 21765, Apr. 22, 2004],...

  2. 76 FR 49531 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-10

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... for obtaining an exemption from the vision requirements (66 FR 17743; 66 FR 30502; 66 FR 33990; 66 FR 41654; 68 FR 35772; 68 FR 37197; 68 FR 44837; 68 FR 48989; 70 FR 33937; 70 FR 41811; 70 FR 42615; 72......

  3. 75 FR 57105 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-17

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (65 FR 33406; 65 FR 57234; 67 FR 57266; 69 FR 52741; 71 FR 53489; 69 FR 33997; 69 FR 61292; 71 FR 55820; 71 FR 32183; 71 FR 41310; 73 FR 65009) Each of these...

  4. 77 FR 38384 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-27

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 65 FR 20245; 66 FR 30502; 66 FR 41654; 66 FR 53826; 66 FR 66966; 67 FR 10471; 67 FR 10475; 67 FR 15662; 67 FR 17102; 67......

  5. 77 FR 545 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-05

    ... for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 66 FR 53826; 66 FR 66966; 68 FR ] 10300; 68 FR 37197; 68 FR 48989; 68 FR 52811; 68 FR 61860; 68 FR 69434; 70 FR 41811; 70..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR......

  6. 75 FR 10692 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-09

    ... Communications Commission published in the Federal Register of February 2, 2010 (75 FR 5241), a document in the..., 2010 (75 FR 5241) to ensure that its rules governing the Maritime Radio Services continue to promote... (75 FR 5241). In rule FR Doc. 2010-2095 published on February 2, 2010 (75 FR 5241), make the...

  7. 77 FR 70885 - Uniform Compliance Date for Food Labeling Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-28

    ... Register of October 19, 1984 (49 FR 41019); December 24, 1996 (61 FR 67710); December 27, 1996 (61 FR 68145); December 23, 1998 (63 FR 71015); November 20, 2000 (65 FR 69666); December 31, 2002 (67 FR 79851); December 21, 2006 (71 FR 76599); December 8, 2008 (73 FR 74349); and December 15, 2010 (75 FR 78155). Use of...

  8. 75 FR 20881 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-21

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 17102; 69 FR 17267; 71 FR 16410; 67 FR 10471; 67 FR 19798; 69 FR 19611; 71...

  9. 77 FR 40945 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-11

    ..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR FURTHER... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (67 FR 15662; 67 FR 37907; 69 FR 26206; 71 FR 4194; 71 FR 13450; 71 FR 26601; 71 FR 32183; 71 FR 41310; 73...

  10. 78 FR 22596 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-16

    ... the Federal Register on January 17, 2008, 73 FR 3316. FOR FURTHER INFORMATION CONTACT: Elaine M. Papp... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (57 FR 57266; 63 FR 66226; 64 FR 16517; 65 FR 57230; 65 FR 78256; 66 FR 16311; 66 FR 17994; 67 FR 76439; 68...

  11. 77 FR 76166 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-26

    ... 1654; 69 FR 71098 71 FR 32183; 71 FR 41310; 71 FR 63379; 72 FR 1050; 72 FR 1054; 73 FR 75806; 73 FR... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63......

  12. 78 FR 67452 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-12

    ... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief, Medical Programs... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568; 66 FR 53826; 66 FR 63289; 66 FR 66966; 67 FR 10471; 67 FR 19798; 68 FR 64944; 68...

  13. 75 FR 77951 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-14

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 20245; 65 FR 57230; 67 FR 71610; 69 FR 64810; 71 FR 66217; 73 FR 75806; 65 FR 45817; 65 FR 77066; 67...

  14. 76 FR 34133 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-10

    ... Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or you may visit... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 78256; 66 FR 16311; 66 FR 17743; 66 FR 33990; 68 FR 10301; 68 FR 13360; 68 FR 19596; 68 FR 35772; 70...

  15. 75 FR 77949 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-14

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 30285; 63 FR ] 54519; 65 FR 20245; 65 FR 57230; 67 FR 57266; 69 FR 52741; 71 FR 66217; 73 FR 74565;...

  16. 77 FR 64583 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 33406; 65 FR 57234; 67 FR 57266; 69 FR 52741; 71 FR 53489; 73 FR 46973; 73 FR 51689; 73 FR 54888; 73...

  17. 76 FR 55467 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-07

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63 FR 66226; 64 FR 16517; 64 FR 27027; 64 FR 51568; 65 FR 45817; 65 FR 77066; 66 FR 17743; 66 FR 30502; 66...

  18. 75 FR 8183 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-23

    ... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This information... exemption from the vision requirements (64 FR 40404; 64 FR 66962; 67 FR 10475; 69 FR 8260; 71 FR 6824; 73 FR 7360; 64 FR 54948; 65 FR 159). Each of these 5 applicants has requested renewal of the exemption...

  19. 78 FR 8689 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-06

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 45817; 65 FR 77066; 67 FR 71610; 67 FR 76439; 68 FR 10298; 70 FR 7545; 72 FR 7812; 74 FR 6689; 76...

  20. 78 FR 78475 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-26

    ... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 66 FR 53826; 66 FR 66966; 68 FR 10300; 68 FR 37197; 68 FR 52811; 68 FR 61860; 68...

  1. 77 FR 56262 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-12

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (69 FR 17263; 69 FR 31447; 71 FR 27033; 73 FR 35194; 73 FR 36954; 73 FR 48273; 75 FR 38602; 75 FR 39725; 75...

  2. 76 FR 37173 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-24

    ... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316), or... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 66962; 65 FR 78256; 66 FR 16311; 67 FR 17102; 68 FR 13360; 70 FR 12265; 70 FR 14747; 70...

  3. 75 FR 63181 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-14

    ...'s attestation in Part III of the FR G-3 would be modified to more closely parallel the FR U-1... 13, 2010. ADDRESSES: You may submit comments, identified by FR 2226, FR G-1, FR G-2, FR G-3, FR G-4, FR T-4, or FR U-1, by any of the following methods: Agency Web site:...

  4. 78 FR 66099 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-04

    ... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (70 FR 57353; 70 FR 72689; 72 FR 46261; 72 FR 54972; 72 FR 62897; 74 FR 43217; 74 FR 57551; 74 FR 60021; 76...

  5. 77 FR 7233 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-10

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (68 FR 61857; 68 FR 74699; 68 FR 75715; 69 FR 10503; 69 FR 12536; 70 FR 57353; 70 FR 72689; 71 FR 644; 71...

  6. 75 FR 8184 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-23

    ... Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This information... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (68 FR 61857; 68 FR 75715; 71 FR 644; 73 FR 19928; 68 FR 74699; 69 FR 10503; 71 FR 6829; 70 FR 57353; 70...

  7. 76 FR 9859 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-22

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (65 FR 45817; 65 FR 77066; 67 FR 71610; 67 FR 76439; 68 FR 10298; 70 FR 7545; 72 FR 7812; 74 FR 6689). Each of... on January 17, 2008 (73 FR 3316), or you may visit...

  8. 78 FR 51268 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-20

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (71 FR 14566; 71 FR 30227; 73 FR 27014; 75 FR 50799; 76 FR 17481; 76 FR 28125; 76 FR 29022; 76 FR 44082). Each... System (FDMS) published in the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER...

  9. 75 FR 38602 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-02

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR ] 51568; 64 FR 68195; 65 FR 20251; 67 FR 38311; 69 FR 26221; 71 FR 27033; 73 FR 52451; 69... Register published on April 11, 2000 (65 FR 19476). This information is also available at...

  10. 77 FR 48590 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-14

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 68195; 65 FR 20251; 67 FR 10471; 67 FR 19798; 67 FR 38311; 67 FR 46016; 67 FR 57267; 69 FR ] 51346; 71... on January 17, 2008 (73 FR 3316), or you may visit...

  11. 76 FR 7101 - Airworthiness Directives; Hamilton Sundstrand Propellers Model 247F Propellers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-09

    ... October 8, 2010 (75 FR 62333). That SNPRM proposed to require removing affected propeller blades from... Policies and Procedures (44 FR 11034, February 26, 1979), (3) Will not affect intrastate aviation in Alaska..., FR2111, FR2123, FR2183, FR2187, FR2262, FR2276 through FR2279 inclusive, FR 2398, FR2449 to...

  12. 76 FR 78945 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-20

    ... FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997); 63 FR 25064 (May 6, 1998); 64 FR 23355 (April 30, 1999); 65 FR 30434 (May 11, 2000); 66 FR 27685 (May...

  13. 76 FR 78728 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-19

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... entry conditions for obtaining an exemption from the vision requirements (64 FR 54948; 65 FR 159; 66 FR 66969; 68 FR 69432; 70 FR 57353; 70 FR 72689; 71 FR 644; 72 FR 62897; 72 FR 67340; 73 FR 1395; 74...

  14. 76 FR 53129 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-25

    ..., identified by FR Y-6, FR Y-7, FR Y- 9 reports, FR Y-11/11S, FR 2314/2314S, FR Y-8, FR Y-12/12A, FR Y-7Q, or FR Y-7N/NS, by any of the following methods: Agency Web Site: http://www.federalreserve.gov . Follow... Organizations. Agency form number: FR Y-6 and FR Y-7. OMB control number: 7100-0297. Frequency:...

  15. 78 FR 32191 - Derivatives

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-29

    ... alternatives. \\5\\ 71 FR 5155 (February 2, 2012). C. 1998 IRPS This proposed rule is consistent with a 1998... promulgation of this proposed rule. \\7\\ 76 FR 37030 (June 24, 2011). First, the Board asked if it should... derivatives transactions independently. \\9\\ 77 FR 5416 (Feb. 3, 2012). Question One. The Board asked if...

  16. 77 FR 4903 - Trichoderma

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-01

    ... Register of March 10, 2010 (75 FR 11171) (FRL-8810- 8), EPA issued a notice pursuant to section 408(d)(3... Trichoderma virens strain GL-21) (40 CFR 180.1100)--see the Federal Register of September 20, 1995 (60 FR 48657) (FRL-4974-1) and October 5, 1995 (60 FR 52248) (FRL-4974-1). 2. Trichoderma harzianum...

  17. 75 FR 79459

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... I Energy Retrofit Property Improvement Loans (FR-5445) 2502-AI93 Proposed Rule Stage 92 Housing Counseling: New Program Requirements (FR-5446) 2502-AI94 Proposed Rule Stage DEPARTMENT OF JUSTICE Regulation.... The Forest Service published a new planning rule on April 21, 2008 (73 FR 21468). On June 30,...

  18. 75 FR 21951

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... and Review'' of September 30, 1993, 58 FR 51735 (Oct. 4, 1993). Since the fall 2007 edition, the... jointly with the Federal Reserve on January 15, 2010 (75 FR 2724). There is further information about this... agencies discuss international effects of their rulemakings in The Regulatory Plan narrative. 74 FR...

  19. 75 FR 21773

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... American Act. Timetable: Action Date FR Cite NPRM 06/00/10 Regulatory Flexibility Analysis Required: Yes... DoD oversight of contractor business systems. Timetable: Action Date FR Cite NPRM 01/15/10 75 FR 2457..., contact Bao-Anh Trinh, telephone 703-696-6515, or write to Department of the Air Force, SAF/XCPP, 1800...

  20. 75 FR 23515 - Assessments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-03

    ... assessment rates.\\6\\ \\5\\ 71 FR 69282. (Nov. 30, 2006). The FDIC also adopted several other final rules implementing the Reform Act, including a final rule on operational changes to part 327. 71 FR 69270 (Nov. 30... Institutions and Insured Foreign Branches in Risk Category I (the large bank guidelines).\\8\\ \\7\\ 71 FR...

  1. 76 FR 62684 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-11

    ... process NIGC should utilize to make revisions. 75 FR 70680. On April 4, 2011, after holding eight... out a consultation schedule and process for review. 76 FR 18457. Part 514 was included in the first... a Preliminary Draft of amendments to Part 514. 76 FR 26967. After considering the comments...

  2. 75 FR 21963

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    .... Timetable: Action Date FR Cite NPRM 03/00/11 Regulatory Flexibility Analysis Required: Yes Agency Contact...: Action Date FR Cite NPRM 12/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact: Jennifer... Date FR Cite NPRM 09/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact: Anthony...

  3. 75 FR 21781

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... Recovery and Reinvestment Act of 2009). Timetable: Action Date FR Cite NPRM 05/00/10 Regulatory Flexibility... of the Medicare and Medicaid EHR Incentive Programs. Timetable: Action Date FR Cite Interim Final Rule 01/13/10 75 FR 2014 Interim Final Rule Comment Period End 03/15/10 Interim Final Rule Effective...

  4. 75 FR 21805

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... published on December 7, 2009, at 74 FR 64448. Beginning in the fall 2007, the Internet became the basic... for these H-1B petitions. Timetable: Action Date FR Cite NPRM 08/00/10 NPRM Comment Period End 10/00.... Timetable: Action Date FR Cite NPRM 06/00/10 NPRM Comment Period End 08/00/10 Regulatory...

  5. 75 FR 21871

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ... http:// Not in FR www.epa.gov/lawsregs/ search/regagenda.html Semiannual Regulatory Flexibility Agenda... in FR main?main=DocketDetail&d=EPA-HQ- OA-2008-0265 and http:// www.epa.gov/lawsregs/ search/ail.html Rulemaking Gateway www.epa.gov/rulemaking/ Not in FR B. What Are EPA's Regulatory Goals, and What...

  6. 77 FR 5178 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-02

    ... should utilize to make revisions. 75 FR 70680. On April 4, 2011, after holding eight consultations and... consultation schedule and process for review. 76 FR 18457. Part 514 was included in the first regulatory group... Commission requested public comment on a Preliminary Draft of amendments to Part 514. 76 FR 26967....

  7. 77 FR 8072 - Semiannual Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ...: Action Date FR Cite Board Requested Comment 04/22/11 76 FR 22648 Board Expects Further Action........ 01... unpaid. Timetable: Action Date FR Cite Board Requested Comment 03/25/11 76 FR 16862 Board Expects Further...: Action Date FR Cite Board Requested Comment 08/03/11 76 FR 46652 Board Expects Further Action...........

  8. 75 FR 67043 - Requirements for Bicycles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-01

    ... (43 FR 60034 (Dec. 22, 1978)), with minor amendments in 1980 (45 FR 82627 (Dec. 16, 1980)), 1981 (46 FR 3204 (Jan. 14, 1981)), 1995 (60 FR 62990 (Dec. 8, 1995)), and 2003 (68 FR 7073 (Feb. 12, 2003)); 68 FR 52691 (Sept. 5, 2003)). In recent years, there have been technological changes in...

  9. 75 FR 78155 - Uniform Compliance Date for Food Labeling Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-15

    ..., 1984 (49 FR 41019), December 24, 1996 (61 FR 67710), December 27, 1996 (61 FR 68145), December 23, 1998 (63 FR 71015), November 20, 2000 (65 FR 69666), December 31, 2002 (67 FR 79851), December 21, 2006 (71 FR 76599), and December 8, 2008 (73 FR 74349). Use of a uniform compliance date provides for...

  10. 75 FR 67721 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-03

    ..., 2011. ADDRESSES: You may submit comments, identified by FR Y-9C, FR Y-9LP, FR Y-11, FR 2314, FR Y-7N, or FR 2886b, by any of the following methods: Agency Web Site: http://www.federalreserve.gov . Follow... form number: FR Y-9C, FR Y-9LP. OMB control number: 7100-0128. Frequency: Quarterly. Reporters:...

  11. 77 FR 52388 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-29

    ... Federal Register on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (73 FR 46973; 73 FR 54888; 75 FR 25917; 75 FR 34209; 75 FR 39727; 75 FR 47886; 75 FR 52063). Each of these...

  12. 78 FR 32708 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-31

    ... the Federal Register on January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp... for obtaining an exemption from the vision requirements (70 FR 17504; 70 FR 30997; 72 FR 21313; 72 FR 27624; 72 FR 32703; 74 FR 23472; 76 FR 32017). Each of these 15 applicants has requested renewal of...

  13. 77 FR 75496 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-20

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (69 FR 64806; 70 FR 2705; 72 FR 1056; 73 FR 76439; 75 FR 65057; 75 FR 79081; 75 FR 79084). Each of these 11... on January 17, 2008 (73 FR 3316), or you may visit...

  14. 77 FR 57985 - National Organic Program (NOP); Amendment to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-19

    ... FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569); December 12, 2007 (72 FR 70479); September 18, 2008 (73 FR 54057); October 9,...

  15. 77 FR 76518 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-28

    ... the 24-hour rule. See 56 FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997); 63 FR 25064 (May 6, 1998); 64 FR 23355 (April 30, 1999); 65 FR 30434 (May...

  16. 76 FR 25534 - Airworthiness Directives; Hamilton Sundstrand Propellers Model 247F Propellers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ...@faa.gov . SUPPLEMENTARY INFORMATION: Airworthiness Directive 2011-04-02, amendment 39-16602 (76 FR..., FR2183, FR2187, FR2262, FR2276 through FR2279 inclusive, FR 2398, FR2449 to FR2958 inclusive, FR20010710...-25-AD; Amendment 39-16602; AD 2011-04-02] RIN 2120-AA64 Airworthiness Directives; Hamilton...

  17. 78 FR 37930 - Lending Limits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-25

    ... interim final rule published on June 21, 2012, 77 FR 37277, and extended on December 31, 2012, 77 FR 76841... limits for savings associations.\\4\\ \\2\\ 77 FR 37265 (June 21, 2012). \\3\\ The OCC has rulemaking authority... this deduction. See generally 76 FR 56508. 1. Loans to Non-Consolidated Subsidiaries The former...

  18. 75 FR 69165 - Conductor Certification

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-10

    ... by part 240, one should refer to the preamble discussions of 49 CFR 240.3 in 64 FR 60966, 60974 (Nov. 8, 1999), 63 FR 50626, 50636-50637 (Sept. 22, 1998), and 56 FR 28228, 28240 (June 19, 1991) for a... analysis of those definitions should refer to the part 240 rulemaking documents. See, 54 FR 50890 (Dec....

  19. 75 FR 79799 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... agenda pursuant to Executive Order 12866 ``Regulatory Planning and Review,'' 58 FR 51735, and the... rulemaking that was published in the Federal Register on September 30, 2004, at 69 FR 58768, issued under... Enforcement Fairness Act of 1996 (SBREFA). Completed: Reason Date FR Cite Final Action 09/15/10 75 FR...

  20. 76 FR 40114 - Semiannual Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... evolving segment of the money services business (MSB) community. Timetable: Action Date FR Cite NPRM 06/28/10 75 FR 36589 NPRM Comment Period End 07/28/10 NPRM Comment Period Extended........ 08/28/10 75 FR... provide continuing education programs. Timetable: Action Date FR Cite NPRM 12/00/11 Regulatory...

  1. 77 FR 7946 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    .... This action addresses the ingredient ipecac syrup. Timetable: Action Date FR Cite Withdrawn 09/08/11... programs. Timetable: Action Date FR Cite NPRM 06/19/09 74 FR 29153 NPRM Comment Period End 08/18/09 Final... certificates for use by Federal agencies for official purposes. Timetable: Action Date FR Cite NPRM...

  2. 78 FR 1574 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... and stability to receive opioid addiction treatment medication. Timetable: Action Date FR Cite NPRM 06/19/09 74 FR 29153 NPRM Comment Period End 08/18/09 Final Action 12/06/12 77 FR 72752 Regulatory... FR Cite NPRM 03/00/13 Regulatory Flexibility Analysis Required: Yes. Agency Contact: Charles...

  3. 76 FR 73993 - Remittance Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-30

    ... track the statutory provisions of Section 1073 of the Dodd-Frank Act. 76 FR 44761 (Jul. 27, 2011). The... final rule published on July 27, 2011, 76 FR 44761, without change. FOR FURTHER INFORMATION CONTACT... persons within its field of membership. 71 FR 62875 (Oct. 27, 2006) (interim final rule); 72 FR 7927...

  4. 75 FR 79763 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... e mail communications. Timetable: Action Date FR Cite NPRM 04/00/11 NPRM Comment Period End 06/00/11... Medicaid EHR Incentive Programs. Timetable: Action Date FR Cite Interim Final Rule 01/13/10 75 FR 2014... 75 FR 44590 Regulatory Flexibility Analysis Required: No Agency Contact: Steven Posnack,...

  5. Experience with the UKIRT InSb array camera

    NASA Technical Reports Server (NTRS)

    Mclean, Ian S.; Casali, Mark M.; Wright, Gillian S.; Aspin, Colin

    1989-01-01

    The cryogenic infrared camera, IRCAM, has been operating routinely on the 3.8 m UK Infrared Telescope on Mauna Kea, Hawaii for over two years. The camera, which uses a 62x58 element Indium Antimonide array from Santa Barbara Research Center, was designed and built at the Royal Observatory, Edinburgh which operates UKIRT on behalf of the UK Science and Engineering Research Council. Over the past two years at least 60% of the available time on UKIRT has been allocated for IRCAM observations. Described here are some of the properties of this instrument and its detector which influence astronomical performance. Observational techniques and the power of IR arrays with some recent astronomical results are discussed.

  6. 76 FR 7091 - Notice of Intent To Require Reporting Forms for Savings and Loan Holding Companies

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-08

    ..., 2011. ADDRESSES: You may submit comments, identified by FR Y-6, FR Y-7, FR Y- 9C, FR Y-9LP, FR Y-9SP, FR Y-9ES, FR Y-9CS, FR Y-10, FR Y-11, FR 2314, FR Y-8, or FR Y-12, by any of the following methods... making applicable to SLHCs beginning with the March 31, 2012 reporting period would be FR Y-6,......

  7. 77 FR 7234 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-10

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 40404; 64 FR 54948; 64 FR 66962; 65 FR 159; 67 FR 10475; 69 FR 8260; 71 FR 6824; 73 FR 7360; 74 FR...

  8. 78 FR 44251 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    .... Timetable: Action Date FR Cite ANPRM (Sunscreen and Insect 02/22/07 72 FR 7941 Repellent). ANPRM Comment Period End 05/23/07 NPRM (UVA/UVB) 08/27/07 72 FR 49070 NPRM Comment Period End 12/26/07 Final Action (UVA/UVB) 06/17/11 76 FR 35620 NPRM (Effectiveness) 06/17/11 76 FR 35672 NPRM (Effectiveness)...

  9. 78 FR 53682 - Tetrachlorvinphos; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-30

    ... documents of August 14, 2002 (67 FR 52985) (FRL-7192-4); February 6, 2008 (73 FR 6867) (FRL-8345-2); September 17, 2008 (73 FR 53732) (FRL-8375-2); June 8, 2011 (76 FR 33184) (FRL-8874-7); September 16, 2011 (76 FR 57657) (FRL-8887-5); March 6, 2013 (78 FR 14487) (FRL-9380-8); March 13, 2013 (78 FR...

  10. 75 FR 70149 - Universal Service Support Mechanisms

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-17

    ... regulations have been approved by OMB: 54.5--71 FR 38796, July 10, 2006. 54.409(d)--69 FR 34600, June 22, 2004. 54.410--69 FR 34600, June 22, 2004. 54.416--69 FR 34601, June 22, 2004. 54.513(c)--69 FR 6191, Feb. 10, 2004. 54.514(b)--68 FR 36942, June 20, 2003. 54.609(d)(2)--68 FR 74502, Dec. 24, 2003....

  11. 75 FR 68407 - Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ... 67013, the Presidential Determination number should read ``2010-12'' (Presidential Sig.) [FR Doc. C1... Migration Needs Resulting from Violence in Kyrgyzstan Correction In Presidential document...

  12. 75 FR 4819 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-29

    ..., 2010. ADDRESSES: You may submit comments, identified by FR 3033, FR 2436 FR 4031, or FR H-1, by any of... number: FR 3033p. OMB control number: 7100-0277. Frequency: One-time. Reporters: Domestic finance...). Abstract: The FR 3033 information collection includes the Census of Finance Companies (FR 3033p) and...

  13. 78 FR 9691 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-11

    ... revision to the FR MSD-4 to add the Municipal Securities Sales Limited Representative as a new type of... FR G-FIN, FR G-FINW, FR ] MSD-4, FR MSD-5, FR 4004, or FR 4198, by any of the following methods... the proposed collection of information is necessary for the proper performance of the Federal...

  14. 78 FR 35363 - Marine Mammals; Incidental Take During Specified Activities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-12

    ... 1991 to 1996 (56 FR 27443; June 14, 1991) and 2008 to 2013 (73 FR 33212; June 11, 2008). These... issued from 1993 to present: November 16, 1993 (58 FR 60402); August 17, 1995 (60 FR 42805); January 28, 1999 (64 FR 4328); February 3, 2000 (65 FR 5275); March 30, 2000 (65 FR 16828); November 28, 2003...

  15. 75 FR 70919 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-19

    ... Federal Reserve System. Agency form numbers: FR 28, FR 28s, FR 28i. OMB control number: 7100-0181...: The Federal Reserve proposes to revise the FR 3016 by decreasing the number of SRC surveys that would... 18, 2011. ADDRESSES: You may submit comments, identified by FR 28, FR H-5, or FR 3016, by any of...

  16. 76 FR 46595 - National Organic Program (NOP); Sunset Review (2011)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-03

    ..., the NOP has published fourteen amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007...

  17. 78 FR 16035 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-13

    ... Management System (FDMS) published in the Federal Register on December 29, 2010 (75 FR 82132), or you may visit http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf . FOR FURTHER INFORMATION CONTACT... exemption from the vision requirements (63 FR 66226; 64 FR 16517; 65 FR 20245; 65 FR 57230; 65 FR 78256;...

  18. 75 FR 9477 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-03-02

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19476). This... for obtaining an exemption from the vision requirements (68 FR 74699; 69 FR 10503; 71 FR 6869; 71 FR 19928; 73 FR 6242; 73 FR 16950). Each of these 19 applicants has requested renewal of the exemption...

  19. 77 FR 76167 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-26

    ... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (67 FR 68719; 68 FR 2629; 69 FR 71100; 72 FR 1053; 73 FR 76440; 75 FR 80887). Each of these 8 applicants has... Privacy Act Statement for the FDMS published in the Federal Register on January 17, 2008 (73 FR 3316),...

  20. 78 FR 800 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-04

    ... December 29, 2010 (75 FR 82132) at http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf . FOR... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (75 FR 65057; 75 FR 72863; 75 FR 77492; 75 FR 79081; 76 FR 2190; 76-5425). Each of these 22 applicants...

  1. 77 FR 13329 - Pandemic Influenza Vaccines-Amendment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-06

    ... Act. SUMMARY: Amendment to declaration issued on March 1, 2010 (75 FR 10268) pursuant to section 319F...: http://www.phe.gov/Preparedness/legal/prepact/Pages/default.aspx . \\1\\ 72 FR 4710 (2007). \\2\\ 72 FR 67731 (2007). \\3\\ 73 FR 61871 (2008). \\4\\ 74 FR 30294 (2009). \\5\\ 74 FR 51153 (2009). \\6\\ 75 FR...

  2. 76 FR 75942 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-12-05

    ... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (64 FR 27027; 64 FR 51568;64 FR 68195; 65 FR 20251; 66 FR 48504; 66 FR 53826; 66 FR 63289; 66 FR 66966; 67...

  3. 77 FR 8028 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    .... Timetable: Action Date FR Cite Interim Final Rule 07/02/10 75 FR 38684 Interim Final Rule Comment Period 08... Interim Final Rule 07/08/10 75 FR 39414 Interim Final Rule Comment Period 09/07/10 End. Final Rule 03/00... FR Cite Interim Final Rule 07/05/11 76 FR 39238 Interim Final......

  4. 78 FR 37437 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-21

    ... publications listed in this AD as of December 10, 2010 ((75 FR 68181, November 5, 2010); corrected (75 FR 78883... October 2, 2012 (77 FR 60064), and proposed to supersede AD 2010-23-07, Amendment 39-16496 ((75 FR 68181, November 5, 2010); corrected (75 FR 78883, December 17, 2010)). That NPRM proposed to correct an...

  5. 76 FR 27882 - Requirements for Bicycles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-13

    ... (74 FR 45428), the CPSC published a notice of the requirements for accreditation of third party... first promulgated in 1978 (43 FR 60034 (Dec. 22, 1978)), with minor amendments in 1980 (45 FR 82627 (Dec. 16, 1980)), 1981 (46 FR 3204 (Jan. 14, 1981)), 1995 (60 FR 62990 (Dec. 8, 1995)), and 2003 (68...

  6. 78 FR 47211 - Connect America Fund

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-05

    ... of Proposed Rulemaking, 76 FR 73830, November 29, 2011, Third Order on Reconsideration, 77 FR 30904, May 24, 2012, Fifth Order on Reconsideration, 78 FR 3837, January 17, 2013, and Order, 78 FR 22198...), 78 FR 34096, June 6, 2013, which were approved by the OMB on July 22, 2013. This notice is...

  7. 78 FR 18285 - Direct Final Rulemaking Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-26

    ... Transportation's (DOT) complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR... would be useful to its rulemaking activities. \\1\\ 69 FR 4455. \\2\\ See 70 FR 67318 (FTA), 72 FR 10086 (FRA), and 75 FR 29915 (FMCSA). Notice and comment rulemaking procedures are not required under...

  8. 77 FR 60064 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-02

    ...-16496 (75 FR 68181, November 5, 2010; corrected December 17, 2010 (75 FR 78883)). That AD required..., Amendment 39-16496 (75 FR 68181, November 5, 2010; corrected December 17, 2010 (75 FR 78883)). This proposed... required by AD 2010-23-07, Amendment 39-16496 (75 FR 68181, November 5, 2010; corrected December 17,...

  9. 78 FR 44315 - Spring 2013 Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ... requirements contained in numerous executive orders: 12866, ``Regulatory Planning and Review'' (58 FR 51735...'' (76 FR 3821, Jan. 21, 2011); 12898, ``Environmental Justice'' (59 FR 7629, Feb. 16, 1994); 13045, ``Children's Health Protection'' (62 FR 19885, Apr. 23, 1997); 13132, ``Federalism'' (64 FR 43255, Aug....

  10. 77 FR 22200 - Rescission of Rules

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-13

    ..., 75 FR 57252, 57253 (Sept. 20, 2010); see also Dodd-Frank Act, Sec. 1062. As a result, the Commission..., the FTC is rescinding its version of these rules effective immediately. \\7\\ See 76 FR 78121 (Dec. 16, 2011); 76 FR 78126 (Dec. 16, 2011); 76 FR 78130 (Dec. 16, 2011); 76 FR 79308 (Dec. 21, 2011). The...

  11. 77 FR 30228 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-22

    ... rule'' under the DOT Regulatory Policies and Procedures (44 FR 11034, February 26, 1979); 3. Will not... airplanes on which the crossbeams at frames (FR) 22/23 and FR 61/62 have not been repaired as specified in... current (HFEC) inspection for cracking of the crossbeam fuselage frame stations FR 22/23 and FR 61/62,...

  12. 78 FR 1690 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    ... Register on May 11, 2011 (76 FR 27564) to establish minimum margin and capital requirements for uncleared... risk- based and leverage capital requirements. Timetable: Action Date FR Cite NPRM 08/30/12 77 FR 169... instruments. Timetable: Action Date FR Cite NPRM 08/30/12 77 FR 52887 Comment Period Extended 11/16/2012.....

  13. 78 FR 2200 - Energy Labeling Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-10

    ...://www.ftc.gov/appliances . \\3\\ 44 FR 66466 (Nov. 19, 1979). \\4\\ See 52 FR 46888 (Dec. 10, 1987) (central air conditioners and heat pumps); 54 FR 28031 (Jul. 5, 1989) (fluorescent lamp ballasts); 58 FR 54955 (Oct. 25, 1993) (certain plumbing products); 59 FR 25176 (May 13, 1994) (lighting products); 59...

  14. 75 FR 79937 - Regulatory Flexibility Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... Date FR Cite NPRM 09/00/11 Regulatory Flexibility Analysis Required: Yes Agency Contact: Sean Harrison... to consolidate and enhance the risk disclosures provided by registrants. Timetable: Action Date FR... FR Cite NPRM 07/17/09 74 FR 35076 NPRM Comment Period End 09/15/09 Final Action 12/23/09 74 FR...

  15. 77 FR 4618 - NHTSA Activities Under the United Nations World Forum for the Harmonization of Vehicle...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-30

    ..., 2000 (65 FR 19477-78), or you may visit http://Docketlnfo.dot.gov . Docket: For access to the docket to..., NHTSA published in the Federal Register (65 FR 51236) a statement of policy regarding the Agency's... include: 65 FR 44565, 66 FR 4893, 68 FR 5333, 69 FR 60460, 71 FR 59582, 73 FR 7803, 73 FR 8743, 73...

  16. 75 FR 1555 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-12

    ... 31, 2003, (68 FR 61987); November 3, 2003, ] (68 FR 62215); October 21, 2005, (70 FR 61217), June 7, 2006, (71 FR 32803); September 11, 2006, (71 FR 53299); June 27, 2007, (72 FR 35137); October 16, 2007, (72 FR 58469); December 10, 2007, (72 FR 70479); December 12, 2007, (72 FR 70479); September 18,...

  17. 77 FR 50767 - Endangered and Threatened Wildlife and Plants; Endangered Status for Four Central Texas...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-22

    ... salamanders were included in nine Candidate Notices of Review (67 FR 40657, June 13, 2002; 69 FR 24876, May 4, 2004; 70 FR 24870, May 11, 2005; 71 FR 53756, September 12, 2006; 72 FR 69034, December 6, 2007; 73 FR 75176, December 10, 2008; 74 FR 57804, November 9, 2009; 75 FR 69222, November 10, 2010; 76 FR...

  18. 75 FR 56641 - Self-Regulatory Organizations; Financial Industry Regulatory Authority, Inc.; Order Granting...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-16

    ..., 2010), 75 FR 36725; 62331 (June 21, 2010), 75 FR 36746; 62332 (June 21, 2010), 75 FR 36749; 62333 (June 21, 2010), 75 FR 36759; 62334 (June 21, 2010), 75 FR 36732; 62335 (June 21, 2010), 75 FR 37494; 62336 (June 21, 2010), 75 FR 36743; 62337 (June 21, 2010), 75 FR 36739; 62338 (June 21, 2010), 75 FR...

  19. 76 FR 69141 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-08

    ...: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569); December 12, 2007 (72 FR 70479); September 18, 2008...

  20. 75 FR 66127 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-27

    ... to violations of Commission APOs and the 24-hour rule. See 56 FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997); 63 FR 25064 (May 6, 1998); 64 FR...

  1. 78 FR 58938 - Endangered and Threatened Wildlife and Plants; Determination of Endangered Species Status for the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-25

    ... the Federal Register on June 13, 2002 (67 FR 40657). Candidate species are assigned listing priority... published in the Federal Register (69 FR 24876, 70 FR 24870, 71 FR 53756, 72 FR 69034, 73 FR 75176, 74 FR 57804, 75 FR 69222, 76 FR 66370) continued to maintain an LPN of 2 for the species. On September...

  2. 75 FR 68505 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ... times, October 31, 2003 (68 FR 61987), November 3, 2003 (68 FR 62215), October 21, 2005 (70 FR 61217), June 7, 2006 (71 FR 32803), September 11, 2006 (71 FR 53299), June, 27, 2007 (72 FR 35137), October 16, 2007 (72 FR 58469), December 10, 2007 (72 FR 69569), December 12, 2007 (72 FR 70479), September...

  3. 78 FR 50055 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-16

    ...- Bliley (GLB) Act. Agency form number: FR 4010, FR 4011, FR 4012, FR 4017, FR 4019, and FR 4023. OMB... hours. Estimated average hours per response: FR 4010: BHC and SLHCs 3 hours, FBOs 3.5 hours; FR 4011: 10 hours; FR 4012: BHCs decertified as financial holding companies (FHCs) 1 hour, SLHCs decertified as...

  4. 77 FR 5781 - Energy Employees Occupational Illness Compensation Program Act of 2000; Revision to the List of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-06

    ... Register (FR) 102); June 30, 2010 (75 FR 125), as amended August 3, 2010 (75 FR 148); April 9, 2009 (74 FR 67); June 28, 2007 (72 FR 124); November 30, 2005 (70 FR 229); August 23, 2004 (69 FR 162); July 21, 2003 (68 FR 139); December 27, 2002 (67 FR 249); June 11, 2001 (66 FR 112); and January 17, 2001 (66...

  5. 78 FR 48138 - Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-07

    .... 78 FR 9359 (Feb. 8, 2013). The TDO previously had been renewed on September 17, 2008, March 16, 2009..., 2011. 77 FR 64,427 (October 18, 2011). The February 4, 2013 Order laid out further evidence of... Kosarian Fard, P.O. Box 52404, Dubai, United Arab Emirates; Mahmoud Amini, G 22 Dubai Airport Free Zone,...

  6. 78 FR 4784 - Fees

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-23

    ... for fees submitted 1-90 days late; and to establish a fingerprinting fee payment process. 77 FR 5178... (Appeal Proceedings Before the Commission), thereby removing former parts 524, 539, and 577. 77 FR 58941... National Indian Gaming Commission 25 CFR Part 514 Fees AGENCY: National Indian Gaming Commission,...

  7. 75 FR 68222 - Suitability

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-05

    ... proposed rule was published on November 3, 2009, at 74 FR 56747, with the comment period ending on January... CFR, 1954- 1958 Comp., p. 218, as amended; E.O. 13467, 3 CFR, 2009 Comp., p. 198; E.O. 13488, 74 FR... Employee Fitness and Reinvestigating Individuals in Positions of Public Trust, to ensure their...

  8. 76 FR 69601 - Suitability

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-09

    ... at 74 FR 56747, a proposed rule to guide agencies in carrying out the new requirement to... FR 68222 reopening the comment period on the proposed rule. This notice provided additional... (E.O.) 13488, Granting Reciprocity on Excepted Service and Federal Contractor Employee Fitness...

  9. 75 FR 21815

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-26

    ...: Action Date FR Cite Final Action 04/00/10 Regulatory Flexibility Analysis Required: Yes Agency Contact... idle facilities. Timetable: Action Date FR Cite NPRM 12/00/10 NPRM Comment Period End 02/00/11...-AX19 Exemptions for Certain Antelope Species Minerals Management Service--Proposed Rule...

  10. 77 FR 7974 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... period ended on November 17, 2010. Timetable: Action Date FR Cite NPRM 08/17/10 75 FR 50718 NPRM Republished 10/15/10 75 FR 63425 NPRM Comment Period End 11/17/10 Final Action 12/30/11 76 FR 82117 Final.... Timetable: Action Date FR Cite NPRM 12/06/11 76 FR 76222 NPRM Comment Period End 03/05/12...

  11. 78 FR 35189 - Tetrachlorvinphos; Proposed Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-12

    ... Federal Register documents of August 14, 2002 (67 FR 52985) (FRL-7192-4); February 6, 2008 (73 FR 6867) (FRL-8345-2); September 17, 2008 (73 FR 53732) (FRL-8375-2); June 8, 2011 (76 FR 33184) (FRL-8874-7); September 16, 2011 (76 FR 57657) (FRL-8887-5); March 6, 2013 (78 FR 14487) (FRL-9380-8); and March 13,...

  12. 76 FR 13188 - Agency Information Collection Activities: Announcement of Board Approval Under Delegated...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-10

    ... Functionality Survey. Agency form number: FR 3054a, FR 3054b, FR 3054c, and FR 3054d. OMB control number: 7100...: FR 3054a: 15,000 hours; FR 3054b: 90 hours; FR 3054c: 1,500 hours; and FR 3054d: 960 hours. Estimated average hours per response: FR 3054a: 15 hours; FR 3054b: 0.5 hours; FR 3054c: 30 hours; and......

  13. 76 FR 33653 - Maritime Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-09

    ... AIS use in international waters. In the Report and Order, published at 71 FR 60067, October 12, 2006... NPRM), published at 71 FR 60102, October 12, 2006, on whether to extend the AIS designation to the thirty-three inland VPCSAs. In the Second Report and Order, published at 74 FR 5117, September 29,...

  14. 78 FR 6276 - Aviation Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-30

    ... Third Report and Order, at 76 FR 17347, March 29, 2011, in this proceeding, the Commission amended Sec.... 87.195. In the Stay Order, at 76 FR 17353, March 29, 2011, which was published in the Federal... Electronic Filing of Documents in Rulemaking Proceedings, 63 FR 24121 (1998). 7. Comments may be...

  15. 75 FR 6590 - Coordinated Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-10

    ... Communications, 74 FR 53893 (Oct. 21, 2009). The deadline for comments on the NPRM was January 19, 2010. In the... express advocacy'' test? See, e.g., NPRM, 74 FR at 53902. Should any parts of 11 CFR 114.15 be included in... NPRM, 74 FR at 53903-04 and 53911-12. The Commission also seeks comment on the application of...

  16. 77 FR 8736 - Pasteuria nishizawae

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-15

    ... Register of February 4, 2011 (76 FR 6465) (FRL-8858- 7), EPA issued a notice pursuant to section 408(d)(3... December 28, 1994 (59 FR 66740) (FRL-4923-4) and June 30, 2010 (75 FR 37734) (FRL-8831-9) for final rules... Culture Collection accession number (i.e., SD-5833) within this microbial pesticide's taxonomic name...

  17. 77 FR 47517 - Enforcement Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-09

    ... review. 76 FR 18457 (Oct. 12, 2011). The Commission's regulatory review process established a tribal... and requesting public comment. 75 FR 70680 (Nov. 18, 2010). After consulting with tribes, NIGC... Proposed Rulemaking, published December 27, 2011, 76 FR 80847, we received the following comments:...

  18. 75 FR 63379 - Technical Amendment

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-15

    ... Employment Standards Administration. Secretary's Order 13-71, 36 FR 8755 (May 12, 1971). The Assistant...-2009, 74 FR 58834 (Nov. 13, 2009). The Secretary then delegated her authority to administer the LHWCA... Order 12866 (58 FR 51735 (Oct. 4, 1993)). ] Executive Order 13132 (Federalism) The Department...

  19. 78 FR 22546 - Hearing Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-16

    ... Availability, 77 FR 31,855 (May 30, 2012). \\3\\ Comments were received from American Financial Services... Regulation of Certain Nonbank Financial Companies, 77 FR 21,637, 21,662 (April 11, 2012) (``Before a vote of...\\ Authority to Require Supervision and Regulation of Certain Nonbank Financial Companies, 77 FR 21,637...

  20. 75 FR 63753 - Family Offices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-18

    .... 31, 2001) [66 FR 41063 (Aug. 6, 2001)] (notice) and 1970 (Aug. 27, 2001) (order). ] e. Key Employees... Nos. 2590 (Feb. 16, 2007) [72 FR 8405 (Feb. 26, 2007)] (notice) and 2599 (Mar. 20, 2007) (order) (two...) [67 FR 1251 (Jan. 9, 2002)] (notice) and 2013 (Feb. 7, 2002) (order). We request comment on...

  1. 76 FR 37983 - Family Offices

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-29

    .... 1092 (Oct. 8, 1987) [52 FR 38400 (Oct. 16, 1987)] (``Release 1092''). c. Family Trusts and Estates Rule... Management, Inc., Investment Advisers Act Release Nos. 2459 (Dec. 9, 2005) [70 FR 74381 (Dec. 15, 2005)] and..., 1997) [62 FR 17512 (April 7, 1997)] (``3(c)(7) Release''). \\86\\ See 3(c)(7) Release, supra note 85,...

  2. 76 FR 61565 - Preemption Review

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-05

    ... January 24, 2006 (71 FR 3922), FDA published a final rule entitled ``Requirements on Content and Format of... National Stockpile'' (72 FR 73589, 73595, December 28, 2007); ``Supplemental Applications Proposing Labeling Changes for Approved Drugs, Biologics, and Medical Devices'' (73 FR 49603, 49605-49606, August...

  3. 76 FR 36356 - C9

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-22

    ...-5805. II. Petition for Exemption In the Federal Register of January 25, 2006 (71 FR 4135) (FRL-7750- 4) for C 9 rich aromatic hydrocarbons, January 23, 2006 (71 FR 3512) (FRL-7750-3) for C 10-11 rich aromatic hydrocarbons, and February 1, 2006 (71 FR 5321) (FRL-7750-5) for C 11-12 rich...

  4. 78 FR 9317 - Glycine max

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-08

    ... Findings In the Federal Register of November 7, 2012 (77 FR 66781) (FRL- 9367-5), EPA issued a document... Executive Order 12866, entitled ``Regulatory Planning and Review'' (58 FR 51735, October 4, 1993). Because... Energy Supply, Distribution, or Use'' (66 FR 28355, May 22, 2001) or Executive Order 13045,...

  5. 75 FR 4308 - Personnel Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-01-27

    .... DATES: The proposed rule, published on January 18, 2008, in the Federal Register (73 FR 3410), is... a Notice of Proposed Rulemaking (NPRM) in the Federal Register (73 FR 3410) to achieve a consistent..., published on January 18, 2008, in the Federal Register (73 FR 3410), is withdrawn as of January 27,...

  6. 76 FR 35511 - Decommissioning Planning

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-17

    ... regulations in 1997 as Subpart E of 10 CFR part 20 (62 FR 39058; July 21, 1997). This set of requirements is... the January 27, 1988 (53 FR 24018), rule on planning for decommissioning require licensees to provide... contamination and the amount of funds set aside and expended on cleanup. (62 FR 39082; July 21, 1997)....

  7. 77 FR 55175 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-07

    ... under the Adjustment Act was published on February 4, 1997. 62 FR 5167. At that time, we codified the... $6,000. 71 FR 28279. At the same time, the agency adjusted the maximum civil penalty for a single... to $16,650,000. 75 FR 5246. Also on February 10, 2010, NHTSA last adjusted the maximum civil...

  8. 75 FR 5244 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-02

    ...) entitled ``Civil Penalties'' which proposed the adjustment of certain civil penalties for inflation. 74 FR... April 11, 2000 (65 FR 19477, 19477-78). FOR FURTHER INFORMATION CONTACT: Jessica Lang, Office of Chief... 4, 1997. 62 FR 5167. At that time, we codified the penalties under statutes administered by...

  9. 75 FR 49879 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-16

    ... complete Privacy Act Statement in the Federal Register published on April 11, 2000 (65 FR 19477-78). Docket... Act was published on February 4, 1997. 62 FR ] 5167. At that time, we codified the penalties under... further adjusted certain penalties. 64 FR 37876. In 2000, the Transportation Recall...

  10. 75 FR 79978 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-21

    ... Statement in the Federal Register published on April 11, 2000 (65 FR 19477, 19477-78). FOR FURTHER... penalties under the Adjustment Act was published on February 4, 1997. 62 FR 5167. At that time, we codified.... Since that time, we have adjusted available penalties on a number of occasions. See 75 FR 49879,...

  11. 77 FR 8018 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-13

    ... revised Standards for Accessible Design (commonly referred to as ``2010 Standards''). See 75 FR 56164 and 56236. On March 11, 2011, DOJ published certain corrections to the revised regulations. See 75 FR 13385... recipient on or after March 15, 2012, shall comply with the 2010 Standards. Timetable: Action Date FR...

  12. 76 FR 20542 - Escherichia coli

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-13

    ...) 305-5805. II. Background and Statutory Findings In the Federal Register of May 5, 2010 (75 FR 24692... Review (58 FR 51735, October 4, 1993). Because this final rule has been exempted from review under... Regulations That Significantly Affect Energy Supply, Distribution, or Use (66 FR 28355, May 22, 2001)...

  13. 76 FR 18349 - Consumer Leasing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... threshold. See 75 FR 78632 (Dec. 16, 2010) (December 2010 Proposed Regulation M Rule). In addition, because... that do not address consumer leases. See 75 FR 78636 (Dec. 16, 2010) (December 2010 Regulation Z... transfer date shall be July 21, 2011. See 75 FR 57252 (Sept. 20, 2010). Accordingly, because Section...

  14. 75 FR 55947 - Coordinated Communications

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-15

    ... FR 53893 (Oct. 21, 2009). The NPRM comment period closed on January 19, 2010. The Commission received... Proposed Rulemaking on Coordinated Communications, 75 FR 6590 (Feb. 10, 2010). The SNPRM invited comments... Committees; Independent Expenditures, 65 FR 76138 (Dec. 6, 2000). Drawing on judicial guidance in...

  15. 75 FR 81651 - United States

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... States v. Adobe Systems, Inc., No. 1:10- cv-01629, 75 FR 60820, 60828-30 (D.D.C. filed Sept. 24, 2010... firm's employees. United States v. Adobe Systems, Inc., No. 1:10-cv-01629, Complaint, 75 FR 60822 (D.D.C. filed Sept. 24, 2010); Competitive Impact ] Statement, 75 FR 60823 (D.D.C. filed Sept. 24,...

  16. 76 FR 19701 - Glyphosate (N-

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-08

    ...-5805. II. Summary of Petitioned-For Tolerance In the Federal Register of March 24, 2010 (75 FR 14154... types of actions from review under Executive Order 12866, entitled Regulatory Planning and Review (58 FR... That Significantly Affect Energy Supply, Distribution, or Use (66 FR 28355, May ] 22, 2001)...

  17. 75 FR 64642 - Indexed Annuities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-20

    ...), published at 74 FR 3175 (January 16, 2009) and effective on January 12, 2011, is withdrawn as of October 20... Commission hereby withdraws rule 151A, which was published at 74 FR 3175 (Jan. 16, 2009). \\1\\ 15 U.S.C. 77a.... 9089 (Dec. 16, 2009) [74 FR 68334 (Dec. 23, 2009)]. That rulemaking assigned an incremental...

  18. 76 FR 49291 - Agricultural Swaps

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-10

    ... Commission recently promulgated a final rule defining the term ``agricultural commodity.'' See 76 FR 41048... Agricultural Swaps, 76 FR 6095, February 3, 2011. \\8\\ See Agricultural Swaps, 75 FR 59666, Sept. 28, 2010. C... specifically addressing the costs and benefits of the proposed agricultural swaps rules. \\10\\ See NPRM, 76...

  19. 75 FR 17297 - Account Class

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-06

    ...) in Appendix A to Regulation Part 190 (Bankruptcy Forms). \\4\\ 74 FR 40794 (August 13, 2009). \\5\\ The... Notice, the rules or bylaws of a DCO constitute one such source. \\7\\ 74 FR at 40796. The public comment... Commission Merchant * * * to a Derivatives Clearing Organization.'' 73 FR 65514 (November 4, 2008). \\14\\...

  20. 75 FR 79759 - Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ... use throughout the rulemaking process. Timetable: Action Date FR Cite Notice: Public Meeting Framework... heating equipment. This is the second review for water heaters. Completed: Reason Date FR Cite Final... ``Regulatory Planning and Review,'' 58 FR 51735, and the Regulatory Flexibility Act, 5 U.S.C. 601 et...

  1. 78 FR 28441 - Executive Compensation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-14

    ... level or range of compensation. \\11\\ For example, the financial crisis of 2008 caused Congress to enact...-- Interim Final Rule with Request for Comments, 73 FR 53356 (September 16, 2008), with Correcting Amendments at 73 FR 54309 (September 19, 2008) and 73 FR 54673 (September 23, 2008), codified at 12 CFR...

  2. 77 FR 44439 - Research Misconduct

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-30

    ..., published July 25, 2003 (68 FR 43982), was created to establish a new research misconduct policy for NASA... http://www.gpo.gov/fdsys/pkg/FR-2003-07-25/pdf/03-18982.pdf . The proposed rule was changed to address public comments, and the final rule was published on July 14, 2004 (69 FR 42102). Details on how...

  3. 75 FR 81405 - Portfolio Holdings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-28

    ... adopts FHFA's interim final rule on portfolio holdings, without change. See 74 FR 5609, January 30, 2009...: Effective December 28, 2010, the interim final rule published on January 30, 2009 (74 FR 5609), which was... final regulation which added new subchapter C of part 1252 to 12 CFR Chapter XII. See 74 FR 5609....

  4. 77 FR 25319 - Commodity Options

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-27

    ... Recordkeeping, 76 FR 29818, May 23, 2011 (``Product Definitions NPRM''). The final rule and interpretations that... not applicable. \\7\\ Commodity Options and Agricultural Swaps, 76 FR 6095, Feb. 3, 2011. Note that in... 10, 2011 and are not addressed herein. See Agricultural Swaps, 76 FR 49291, Aug. 10, 2011...

  5. 75 FR 34040 - Bacillus thuringiensis

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-16

    ...) 305-5805. II. Background and Statutory Findings In the Federal Register of September 30, 2009 (74 FR..., entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993). Because this final rule has been... FR 28355, May 22, 2001), or Executive Order 13045, entitled Protection of Children from...

  6. 76 FR 14289 - Bacillus thuringiensis

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-16

    ... Register of January 21, 2011 (76 FR 3885) (FRL-8855- 4), EPA issued a notice pursuant to section 408(d)(3... review under Executive Order 12866, entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993... Supply, Distribution, or Use (66 FR 28355, May 22, 2001) or Executive Order 13045, entitled Protection...

  7. 77 FR 34186 - Appeal Procedures

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-11

    ... final rule (71 FR 28239). Section 275 of the 1994 Act, 7 U.S.C. 6995, requires USDA agencies to hold... agency level. This final rule amends the interim final rule published May 16, 2006 (71 FR 28239), in... at 71 FR 28241 is to ``improve the accuracy of technical determinations and sufficiency of...

  8. 78 FR 53285 - Seagoing Barges

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-29

    .... Abbreviations CFR Code of Federal Regulations DFR Direct final rule E.O. Executive Order FR Federal Register... rule (DFR) entitled ``Seagoing Barges'' (76 FR 77712). Following the receipt of an adverse comment on... (77 FR 20727). On January 9, 2013, we published a notice of proposed rulemaking (NPRM)...

  9. 77 FR 70710 - Civil Penalties

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-27

    ... Act was published on February 4, 1997. 62 FR 5167. At that time, we codified the penalties under... States Code or a regulation thereunder, as specified in 49 CFR 578.6(a)(1) from $5,000 to $6,000. 71 FR...,000. 75 FR 5246. Also on February 10, 2010, NHTSA last adjusted the maximum civil penalty for...

  10. 75 FR 59666 - Agricultural Swaps

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-28

    ... one of the assets or cash flows is related to the price of one or more commodities.'' (See 72 FR 66099... traded on or through a multilateral transaction execution facility.\\16\\ \\15\\ See 58 FR 5587 (Jan. 22... Segregated Accounts, 73 FR 77015 (Dec. 18, 2008); Order (1) Pursuant to Section 4(c) of the...

  11. 76 FR 72623 - Literacy Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-11-25

    ... interim rule on September 26, 1997 (62 FR 50791). The Bureau amended its regulations on the literacy... Program regulations, published as an interim rule on September 26, 1997 (62 FR 50791). In the interim rule... Part 540 Prisoners. 0 Accordingly, the interim rule published on September 26, 1997 (62 FR 50791)...

  12. 77 FR 71714 - Final Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-04

    ..., 2005 (70 FR 7414) that amended certain provisions of title 49, Code of Federal Regulations, that... that NHTSA published on August 6, 2012 (77 FR 46677). There were no comments in response to the notice.... In the final rule published on February 14, 2005 (70 FR 7414), 49 CFR 567.4(g)(5) was amended...

  13. 77 FR 32465 - Technical Standards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-01

    ... Electronic, Computer, or Other Technologic Aids Used in the Play of Class II Games. 73 FR 60508. The rule..., and the process NIGC should utilize to make revisions. 75 FR 70680. On April 4, 2011, after consulting...) setting out a consultation schedule and process for review. 76 FR 18457. Part 547 was included in...

  14. 78 FR 42764 - Cumberland System

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-17

    ... August 5, 1993 (58 FR 41762). The marketing policy for the Cumberland System of Projects provides peaking... policy for the Cumberland System was published in the Federal Register August 5, 1993 (58 FR 41762). The... August 5, 1993 (58 FR 41762). The marketing policy for the Cumberland System of Projects provides...

  15. 78 FR 40430 - De Facto

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-05

    ... Involving Non-Market Economy Countries, 75 FR 78676 (December 16, 2010). \\3\\ The Department currently... China, 56 FR 20588 (May 6, 1991) (``Sparklers''), as further developed in Final Determination of Sales at Less Than Fair Value: Silicon ] Carbide from the People's Republic of China, 59 FR 22585 (May...

  16. 77 FR 8731 - Aureobasidium pullulans

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-15

    ...-5805. II. Background and Statutory Findings In the Federal Register of March 10, 2010 (75 FR 11171..., entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993). Because this final rule has been... FR 28355, May 22, 2001) or Executive Order 13045, entitled Protection of Children from...

  17. 78 FR 8195 - Biweekly Notice

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-05

    ..., 2013. The last biweekly notice was published on January 22, 2013 (78 FR 4469). ADDRESSES: You may... NRC E-Filing rule (72 FR 49139; August 28, 2007). The E-Filing process requires participants to submit... Technical Specifications. Date of initial notice in Federal Register: September 429, 2012 (77 FR 53927)....

  18. 76 FR 52533 - Personnel Records

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-23

    ... published its proposed rule with request for comments on January 19, 2010. 75 FR 2821 (Jan. 19, 2010). OPM... regulations implementing that order (19 FR 6899 (October 28, 1954)), with the concept of custodian in order to... from 5 CFR part 294 to 5 CFR part 293 (See 47 FR 46513 (Oct. 19, 1982)). As part of this...

  19. 76 FR 44761 - Remittance Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-27

    ... membership and issued Sec. 701.30 to implement Section 503. 71 FR 62875 (Oct. 27, 2006) (interim final rule); 72 FR 7927 (Feb. 22, 2007) (final rule). Section 1073 of the Dodd-Frank Act added a new Section 919... of the services offered by remittance transfer providers. 99 FR 29902 (May 23, 2011). FCUs have...

  20. 77 FR 30053 - Repair Stations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-21

    ... Register published on April 11, 2000 (65 FR 19477-19478), as well as at http://DocketsInfo.dot.gov . Docket... difficult to administer. \\1\\ 64 FR 33142; June 21, 1999. In August 2001, the FAA published a final rule with... on the FAA's proposed changes to these areas. \\2\\ 66 FR 41088; August 6, 2001. On October 19,...

  1. 77 FR 16175 - Station Blackout

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-20

    ... petition for rulemaking (PRM), PRM-50-101 (76 FR 58165) as a way to address SBO mitigation. The approach... Design Criteria for Nuclear Power Plant Construction Permits'' (32 FR 10213). Subsequently, on February... Design Criteria for Nuclear Power Plants,'' to 10 CFR part 50 (36 FR 3255). The GDC provide...

  2. 78 FR 34245 - Miscellaneous Corrections

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-06-07

    .... 2.346(f). (77 FR 46576-46578, 46584; August 3, 2012). This change implements the intended revision... Energy Commission's February 1, 1973 (38 FR 3082), final rule. Adding Metric Units. In Sec. 73.6(b... Writing,'' published June 10, 1998 (63 FR 31883). VII. Backfitting and Issue Finality The NRC...

  3. 78 FR 75346 - Proposed Agency Information Collection Activities; Comment Request

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-11

    ... consolidated assets of the top-tier organization. The FR 2314 data are used to identify current and potential... by FR Y-11/11S, FR 2314/ 2314S, FR Y-7N/7NS, FR Y-7Q, or FR 2886b, by any of the following methods... U.S. Nonbank Subsidiaries of U.S. Holding Companies. Agency form number: FR Y-11 and FR Y-11S....

  4. 77 FR 22376 - Airport Improvement Program (AIP) Grant Assurances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-13

    ...), were published on February 3, 1988, at 53 FR 3104 and amended on September 6, 1988, at 53 FR 34361; on August 29, 1989, at 54 FR 35748; on June 10, 1994 at 59 FR 30076; on January 4, 1995, at 60 FR 521; on June 2, 1997, at 62 FR 29761; on August 18, 1999, at 64 FR 45008; on March 29, 2005 at 70 FR 15980;...

  5. 75 FR 79079 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-17

    ... 41310; 72 FR 1054; 72 FR 1050; 73 FR 75806; 73 FR 78421; 73 FR 78422). Each of these 12 applicants has... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (63...

  6. 76 FR 34135 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-10

    ... will not compromise safety. The Agency has concluded that granting these exemption renewals will... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (63 FR 66226; 65 FR 20245; 65 FR 45817; 65 FR 57230; 65 FR 77066;...

  7. 78 FR 12813 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-25

    ... from the vision requirement if the exemptions granted will not compromise safety. The Agency has... on January 17, 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf... exemption from the vision requirements (65 FR 45821; 65 FR 77066; 67 FR 54525; 67 FR 68719; 68 FR 1654;...

  8. 76 FR 288 - National Organic Program (NOP); Sunset Review (2011)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-01-04

    ... published an Advanced Notice of Proposed Rulemaking (ANPR) (73 FR 13795) in the Federal Register on March 14... (74 FR 11904), September 9, 2009 (74 FR 46411), and March 17, 2010 (75 FR 12723). The NOSB received... List has been amended fourteen times, October 31, 2003 (68 FR 61987), November 3, 2003 (68 FR...

  9. 76 FR 18618 - Operating Limitations at Newark Liberty International Airport

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-04

    ... the Government Printing Office's Web page at http://www.gpoaccess.gov/fr/index.html . You also may..., 2009.\\5\\ \\1\\ 73 FR 29550 (May 21, 2008), as amended by 74 FR 51648 (Oct. 7, 2009). \\2\\ 73 FR 29626 (May 21, 2008); Docket FAA-2008-0517. \\3\\ 73 FR 60574, amended by 73 FR 66516 (Nov. 10, 2008). \\4\\ 74...

  10. 78 FR 60726 - Hazardous Materials Regulations: Penalty Guidelines

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-02

    ... Appropriations Act of 1994 (See 60 FR 12139). RSPA and PHMSA published additional revisions of these guidelines on January 21, 1997 (62 FR 2970), September 8, 2003 (68 FR 52844), February 17, 2006 (71 FR 8485), December 29, 2009 (74 FR 68701), and September 1, 2010 (75 FR 53593). These guidelines provide...

  11. 78 FR 32703 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-31

    ... January 17, 2008 (73 FR 3316). FOR FURTHER INFORMATION CONTACT: Elaine M. Papp, Chief, Medical Programs... applicants has satisfied the entry conditions for obtaining an exemption from the vision requirements (73 FR 35194; 73 FR 48272; 74 FR 19267; 74 FR 28094; 76 FR 32016). Each of these 13 applicants has...

  12. 76 FR 63216 - Small Business Size Standards: Information

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-12

    ... July 18, 2008 (73 FR 41237). Because of changes in the Federal marketplace and industry structure since... standards (see 69 FR 13130 (March 4, 2004) and 57 FR 62515 (December 31, 1992)). At the start of current... Services), which the Agency proposed (74 FR 53924, 74 FR 53913, and 74 FR 53941, October 21, 2009)...

  13. 78 FR 30327 - Endangered Species; Marine Mammals; Issuance of Permits

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-22

    .......... 77 FR 26779; May 7, June 20, 2012. 2012. 72630A Ripley's Aquarium 77 FR 26779; May 7, June 20, 2012.... Aquarium 2012. 750150 Richard Noble 77 FR 30547; May 23, July 17, 2012. 2012. 75409A Andrew Barton 77 FR... Henderson........ 77 FR 24510; April 24, June 1, 2013. 2012. 71523A Liberty Hill Land 77 FR 24510; April...

  14. 75 FR 54889 - Development of Set 24 Toxicological Profiles

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-09-09

    ... announced in the Federal Register on March 6, 2008 (73 FR 12178). For prior versions of the list of substances, see Federal Register notices dated April 17, 1987 (52 FR 12866); October 20, 1988 (53 FR 41280); October 26, 1989 (54 FR 43619); October 17, 1990 (55 FR 42067); October 17, 1991 (56 FR 52166); October...

  15. 78 FR 30661 - Electronic Fund Transfers (Regulation E)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-22

    ... effective October 28, 2013. The effective date of the rules published February 7, 2012 (77 FR 6194), July 10, 2012 (77 FR 40459), and August 20, 2012 (77 FR 50244), which were delayed on January 29, 2013 (78 FR... 7, 2012 (77 FR 6194) (February Final Rule) \\1\\ and August 20, 2012 (77 FR 50244) (August Final...

  16. 78 FR 65583 - Capital Planning and Stress Testing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-01

    ... stress tests.\\3\\ \\1\\ 76 FR 74631 (Dec. 1, 2011). \\2\\ Id. \\3\\ See 77 FR 61238 (Oct. 9, 2012); 77 FR 62378 (Oct. 12, 2012); 77 FR 62396 (Oct. 12, 2012); 77 FR 62417 (Oct. 15, 2012). II. Proposed Rule A. Credit..., prepares them to do this. \\5\\ See 78 FR 62018 (Oct. 11, 2013). The net worth ratio contains components...

  17. 78 FR 59219 - Stress Testing of Regulated Entities

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-26

    ... on December 4, 2012, after one 30 day extension.\\1\\ \\1\\ 77 FR 60948 (Oct. 5, 2012) and 77 FR 66566... the OCC, it is consistent and comparable with them. \\2\\ 77 FR 62396 (Oct. 12, 2012). \\3\\ Id. \\4\\ 77 FR 62378 (Oct. 12, 2012). \\5\\ 77 FR 62417 (Oct. 15, 2012). \\6\\ 77 FR 61238 (Oct. 9, 2012). ] V....

  18. 78 FR 49365 - Electronic Fund Transfers (Regulation E); Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-14

    ... Federal Register on Wednesday, May 22, 2013. 78 FR 30662. The 2013 Final Rule modifies the final rules...\\ 77 FR 6194 (February 7, 2012), 77 FR 40459 (July 10, 2012), and 77 FR 50244 (August 20, 2012). The.... Corrections to FR Doc. 2013-10604 In FR Doc. 2013-10604 appearing on page 30661 in the Federal Register...

  19. 78 FR 14410 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-05

    ... for obtaining an exemption from the vision requirements (65 FR 66286; 66 FR 13825; 67 FR 68719; 68 FR...) published in the Federal Register on December 29, 2010 (75 FR 82132), or you may visit http://www.gpo.gov/fdsys/pkg/FR-2010-12-29/pdf/2010-32876.pdf . FOR FURTHER INFORMATION CONTACT: Elaine M. Papp,...

  20. 77 FR 17108 - Qualification of Drivers; Exemption Applications; Vision

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-23

    ... exemption from the vision requirements (72 FR 39879; 72 FR 52419; 75 FR 8184; 75 FR 9480; 75 FR 22176). Each..., 2008 (73 FR 3316), or you may visit http://edocket.access.gpo.gov/2008/pdf/E8-785.pdf . FOR FURTHER... Federal Motor Carrier Safety Administration Qualification of Drivers; Exemption Applications;...

  1. 76 FR 45184 - Revisions to Direct Fee Payment Rules

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-28

    ... how we implemented these requirements under the SSPA. \\7\\ 69 FR 50431 (Aug. 16, 2004), 69 FR 77307 (Dec. 27, 2004), 70 FR 2447 (Jan. 13, 2005), 70 FR 14490 (Mar. 22, 2005); 70 FR 41250 (July 18, 2005), and 72 FR 46121 (Aug. 16, 2007). We also published interim final rules and final rules to...

  2. 76 FR 19077 - Energy Conservation Program for Consumer Products: Decision and Order Granting a Waiver to...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-06

    ... Register on December 10, 2010. 75 FR 76962. In its petition, Electrolux sought a waiver from the existing..., 2008 (73 ] FR 10425); May 5, 2009 (74 FR 20695); December 15, 2009 (74 FR 66338), March 11, 2010 (75 FR 11530), April 29, 2010 (75 FR 22584); August 19, 2010 (75 FR 51264); March 18, 2010 (75 FR...

  3. 77 FR 47924 - Determinations Concerning Illnesses Discussed in National Academy of Sciences Report: Veterans...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ... several diseases discussed in those reports. Those notices are published at: 59 FR 341 (Jan. 4, 1994), 61 FR 41442 (Aug. 8, 1996), 64 FR 59232 (Nov. 2, 1999), 67 FR 42600 (Jun. 4, 2002), 68 FR 27630 (May 30, 2003), 72 FR 32395 (May 20, 2007), 75 FR 32540 (Jun. 8, 2010), and 75 FR 81332 (Dec. 27, 2010)....

  4. 77 FR 8089 - National Organic Program (NOP); Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-02-14

    ... multiple amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569); December 12,...

  5. 76 FR 48722 - Endangered and Threatened Wildlife and Plants; Endangered Status for the Cumberland Darter, Rush...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-09

    ... Year page number Register 1985 50 FR 37958 September 18, 1985. 1989 54 FR 554 January 6, 1989. 1991 56 FR 58804 November 21, 1991. 1994 59 FR 58982 November 15, 1994. 1996 61 FR 7596 February 28, 1996. 1999 64 FR 57533 October 25, 1999. 2001 66 FR 54807 October 30, 2001. 2002 67 FR 40657 June 13,...

  6. 76 FR 25612 - National Organic Program; Proposed Amendments to the National List of Allowed and Prohibited...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-05

    ... the National List: October 31, 2003, (68 FR 61987); November 3, 2003, (68 FR 62215); October 21, 2005, (70 FR 61217), June 7, 2006, (71 FR 32803); September 11, 2006, (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007, (72 FR 58469); December 10, 2007, (72 FR 70479); December 12, 2007, (72...

  7. 75 FR 18764 - Migratory Bird Subsistence Harvest in Alaska; Harvest Regulations for Migratory Birds in Alaska...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-13

    ... Federal Register citation August 16, 2002 67 FR 53511. July 21, 2003 68 FR 43010. April 2, 2004 69 FR 17318. April 8, 2005 70 FR 18244. February 28, 2006 71 FR 10404. April 11, 2007 72 FR 18318. March 14, 2008 73 FR 13788. May 19, 2009 74 FR 23336. These documents, which are all final rules setting...

  8. 75 FR 52607 - Supplemental Standards of Ethical Conduct for Employees of the Federal Housing Finance Agency

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-27

    .... \\2\\ See 57 FR 35006-35067, as corrected at 57 FR 48557 and 57 FR 52583, with additional grace period extensions at 59 FR 4779-4780, 60 FR 6390-6391, 60 FR 66857-66858, and 61 FR 40950-40952. With the... published proposed supplemental rules for comment on April 16, 2010 (75 FR 19909). Comments Received...

  9. 78 FR 41703 - Regulation of Fuels and Fuel Additives: Additional Qualifying Renewable Fuel Pathways Under the...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-11

    ... renewable fuels they produce through approved fuel pathways. See 75 FR 14670 (March 26, 2010); 75 FR 26026 (May 10, 2010); 75 FR 37733 (June 30, 2010); 75 FR 59622 (September 28, 2010); 75 FR 76790 (December 9, 2010); 75 FR 79964 (December 21, 2010); 77 FR 1320 (January 9, 2012); 77 FR 74592 (December 17,...

  10. 78 FR 16668 - Twenty-Fifth Update of the Federal Agency Hazardous Waste Compliance Docket

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-18

    ... 12, 1988 (53 FR 4280). Since then, updates to the Docket have been published on November 16, 1988 (54 FR 46364); December 15, 1989 (54 FR 51472); August 22, 1990 (55 FR 34492); September 27, 1991 (56 FR 49328); December 12, 1991 (56 FR 64898); July 17, 1992 (57 FR 31758); February 5, 1993 (58 FR...

  11. 78 FR 79481 - Summary of Commission Practice Relating to Administrative Protective Orders

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-30

    ... actions in response to violations of Commission APOs and the 24-hour rule. See 56 FR 4846 (February 6, 1991); 57 FR 12335 (April 9, 1992); 58 FR 21991 (April 26, 1993); 59 FR 16834 (April 8, 1994); 60 FR 24880 (May 10, 1995); 61 FR 21203 (May 9, 1996); 62 FR 13164 (March 19, 1997); 63 FR 25064 (May 6,...

  12. 77 FR 28472 - National Organic Program; Amendments to the National List of Allowed and Prohibited Substances...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-15

    ... published multiple amendments to the National List: October 31, 2003 (68 FR 61987); November 3, 2003 (68 FR 62215); October 21, 2005 (70 FR 61217); June 7, 2006 (71 FR 32803); September 11, 2006 (71 FR 53299); June 27, 2007 (72 FR 35137); October 16, 2007 (72 FR 58469); December 10, 2007 (72 FR 69569);...

  13. 76 FR 17353 - Migratory Bird Subsistence Harvest in Alaska; Harvest Regulations for Migratory Birds in Alaska...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-29

    ... following Federal Register documents: Date Federal Register citation August 16, 2002 67 FR 53511 July 21, 2003 68 FR 43010 April 2, 2004 69 FR 17318 April 8, 2005 70 FR 18244 February 28, 2006 71 FR 10404 April 11, 2007 72 FR 18318 March 14, 2008 73 FR 13788 May 19, 2009 74 FR 23336 April 13, 2010 75...

  14. 75 FR 65599 - Migratory Bird Subsistence Harvest in Alaska; Harvest Regulations for Migratory Birds in Alaska...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-26

    ... following Federal Register documents: Date Federal Register Citation August 16, 2002 67 FR 53511 July 21, 2003 68 FR 43010 April 2, 2004 69 FR 17318 April 8, 2005 70 FR 18244 February 28, 2006 71 FR 10404 April 11, 2007 72 FR 18318 March 14, 2008 73 FR 13788 May 19, 2009 74 FR 23336 April 13, 2010 75...

  15. 77 FR 66609 - Twenty-Fifth Update of the Federal Agency Hazardous Waste Compliance Docket

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-06

    ... (53 FR 4280). Since then, updates to the Docket have been published on November 16, 1988 (54 FR 46364); December 15, 1989 (54 FR 51472); August 22, 1990 (55 FR 34492); September 27, 1991 (56 FR 49328); December 12, 1991 (56 FR 64898); July 17, 1992 (57 FR 31758); February 5, 1993 (58 FR 7298); November 10,...

  16. 78 FR 17432 - Kiewit Power Constructors Co. et al.; Application for a Permanent Variance and Request for Comments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-21

    ... past seven years. \\4\\ See 38 FR 8545 (April 3, 1973), 44 FR 51352 (August 31, 1979), 50 FR 20145 (May 14, 1985), 50 FR 40627 (October 4, 1985), 52 FR 22552 (June 12, 1987), 68 FR 52961 (September 8, 2003), 70 FR 72659 (December 6, 2005), 71 FR 10557 (March 1, 2006), 72 FR 6002 (February 8, 2007), 74...

  17. 75 FR 68409 - Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-08

    ..., the Presidential Determination number should read ``2010-14'' (Presidential Sig.) [FR Doc. C1-2010... Migration Needs Resulting From Flooding In Pakistan Correction In Presidential document 2010-27673...

  18. 75 FR 22100 - Meetings

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-27

    ... the Federal Register on April 13, 2010 (75 FR 18781). At the Board meeting scheduled on the afternoon... meetings and public hearing. Persons attending Board meetings are requested to refrain from using...

  19. 75 FR 42324 - Pyraclostrobin; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-21

    ... Federal Register of February 4, 2010 (75 FR 5792) (FRL-9110- 5) and June 8, 2010 (75 FR 32465) (FRL-8827-5....4 mg/kg/ ] day. A similar conclusion was reached in an earlier action on pyraclostrobin. (See 72 FR..., entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993). Because this final rule has...

  20. 78 FR 65565 - Fomesafen; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-01

    ... September 28, 2012 (77 FR 59578) (FRL- 9364-6) and June 5, 2013 (78 FR 33785) (FRL-9386-2), EPA issued... review under Executive Order 12866, entitled ``Regulatory Planning and Review'' (58 FR 51735, October 4... Significantly Affect Energy Supply, Distribution, or Use'' (66 FR 28355, May 22, 2001) or Executive Order...

  1. 77 FR 47800 - Adoption of Recommendations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-10

    ...\\ See generally Exec. Order No. 12,866, 58 FR 51735 (Oct. 4, 1993). Independent regulatory agencies, as.... Order No. 13,132, 64 FR 43255 (Aug. 10, 1999). \\4\\ See generally Exec. Order No. 12,630, 53 FR 8859 (Mar... Rules, 50 FR 28364 (July 12, 1985) (preamble). Specifically, the recommendation states that ``...

  2. 77 FR 65999 - Assessments, Large Bank Pricing

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-31

    ... capital and reserves score. \\7\\ 75 FR 23516 (May 3, 2010); 75 FR 72612 (November 24, 2010). While..., report date (March PRA notice).\\8\\ \\8\\ 76 FR 14460 (March 16, 2011). Commenters on the March PRA notice... public comment on July 27, 2011 (July PRA notice).\\10\\ \\10\\ 76 FR 44987 (July 27, 2011). In response...

  3. 78 FR 1598 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-01-08

    .... Timetable: Action Date FR Cite NPRM 12/06/11 76 FR 76222 NPRM Comment Period End 03/05/12 Next Action...: Action Date FR Cite Completed SBREFA Report 12/19/03 Initiated Peer Review of Health 05/22/09 Effects and... November 26, 2002, OSHA published a Request for Information (RFI) (67 FR 70707) to solicit...

  4. 75 FR 79803 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    ..., including the detail required to be reported. Timetable: Action Date FR Cite NPRM 07/00/11 Regulatory... 1 of the order. Timetable: Action Date FR Cite NPRM 08/03/09 74 FR 38488 NPRM Comment Period End 09/02/09 Final Action 05/20/10 75 FR 28368 Final Action Effective 06/21/10 Regulatory...

  5. 75 FR 31665 - Electronic Fund Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-04

    ... 2009 and has a mandatory compliance date of July 1, 2010. See 74 FR 59033 (November 17, 2009... E and the official staff commentary. See 75 FR 9120 (March 1, 2010). The Board received... institution's overdraft practices and to make an informed choice. 74 FR 59045; 75 FR 9121....

  6. 75 FR 33681 - Electronic Fund Transfers

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-15

    ... document in the Federal Register of June 4, 2010 (75 FR 31665). The document (FR Doc. 2010-13280) amended... number 2. In the final rule, FR Doc. 2010-13280, published on June 4, 2010 (75 FR 31665) make the... CFR Part 205 Electronic Fund Transfers June 4, 2010. AGENCY: Board of Governors of the Federal...

  7. 76 FR 53417 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-26

    ... . SUPPLEMENTARY INFORMATION: Additions On 6/17/2011 (76 FR 35415-35417); 6/24/2011 (76 FR 37069-37070); 7/ 1/2011 (76 FR 38641-38642); and 7/8/2011 (76 FR 40342-40343), the Committee for Purchase From People Who Are..., NAVFAC Northwest, Silverdale, WA. Service Type/Location: Janitorial Service, Naval Operations...

  8. 78 FR 14738 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-07

    ... published at 75 FR 62061 and at 77 FR 55785. The table provided here represents the flooding sources... In the proposed rule published at 75 FR 62061, in the October 7, 2010, issue of the Federal Register... published at 77 FR 55785 in the September 11, 2012 issue of the Federal Register under the authority of...

  9. 76 FR 40086 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    ... interpretation would narrow the scope of the advice exemption. Timetable: Action Date FR Cite NPRM 06/00/11... required to be reported. Timetable: Action Date FR Cite NPRM 11/00/11 Regulatory Flexibility Analysis... anticipates publishing a final rule by December 2011. Timetable: Action Date FR Cite NPRM 08/17/10 75 FR...

  10. 77 FR 60969 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-05

    ...: On 9/28/2012 (77 FR 59595), the Committee for Purchase From People Who Are Blind or Severely Disabled...-0655, or email CMTEFedReg@AbilityOne.gov . SUPPLEMENTARY INFORMATION: Additions On 8/3/2012 (77 FR 46411), 8/10/2012 (77 FR 47823), and 8/17/2012 (77 FR 49784), the Committee for Purchase From People...

  11. 75 FR 52724 - Procurement List Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-27

    ... . SUPPLEMENTARY INFORMATION: Additions On 10/23/2009 (74 FR 54783-54784); 6/18/2010 (75 FR 34701-34702); 6/25/2010 (75 FR 36363-36371); and 7/9/2010 (75 FR 39497-39499), the Committee for Purchase From People Who Are... additional reporting, recordkeeping or other compliance requirements for small entities other than the...

  12. 78 FR 22222 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-04-15

    ... published at 75 FR 55515 and 77 FR 73394. The table provided here represents the flooding sources, location... buildings. Correction In the proposed rule published at 75 FR 55515 in the September 13, 2010, issue of the... were subsequently published at 77 FR ] 73394 in the December 10, 2012, issue of the Federal...

  13. 77 FR 50668 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-22

    ... at 76 FR 53082 and at 76 FR 61295. The table provided here represents the flooding sources, location... for the contents in those buildings. Correction In the proposed rule published at 76 FR 53082, in the August 25, 2011 issue of the Federal Register, and in the correction notice published at 76 FR 61295,...

  14. 78 FR 9581 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-02-11

    ... FR 59149). That NPRM proposed to correct an unsafe condition for the specified products. The..., Amendment 39-16390 (75 FR 49370, August 13, 2010) UPS requested that the NPRM (77 FR 59149, September 26, 2012) supersede AD 2010-16-13, Amendment 39-16390 (75 FR 49370, August 13, 2010). UPS stated that...

  15. 78 FR 70207 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-25

    ... Register on May 14, 2013 (78 FR 28159). The NPRM proposed to correct an unsafe condition for the specified... (FR) 41 and FR 46, on one A300-600 aeroplane a crack was detected in the area 2 of the foot of frame FR 46 at junction radius level. This frame, that was previously repaired due to a crack finding...

  16. 76 FR 64781 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-19

    ... approved the incorporation by reference of certain other publications as of March 6, 2008 (73 FR 5731... April 6, 2011 (76 FR 18960), and proposed to supersede AD 2008-03-04, Amendment 39-15353 (73 FR 5731, January 31, 2008). That NPRM (76 FR 18960, April 6, 2011) proposed to correct an unsafe condition for...

  17. 78 FR 28159 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-14

    ... the lower frame fittings between Frame (FR) 41 and FR 46, on one A300-600 aeroplane a crack was detected in the area 2 of the foot of frame FR 46 at junction radius level. This frame, that was previously... 12866; 2. Is not a ``significant rule'' under the DOT Regulatory Policies and Procedures (44 FR...

  18. 76 FR 8403 - Biorefinery Assistance Guaranteed Loans

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-14

    ... and guaranteed loans were serviced according to the provisions in the November 20, 2008 (73 FR 70544), March 12, 2010 (75 FR 11840), or the May 6, 2010 (75 FR ] 25076) Federal Register notice, as applicable... and Responses The proposed rule was published in the Federal Register on April 16, 2010 (75 FR...

  19. 76 FR 40012 - Semiannual Agenda of Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-07-07

    .... Timetable: Action Date FR Cite NPRM To Be Determined Regulatory Flexibility Analysis Required: Yes. Agency...: Action Date FR Cite ANPRM 05/10/05 70 FR 24495 ANPRM Comment Period End 06/09/05 Notice of Public Meeting 05/03/10 75 FR 23245 NPRM 07/00/11 Regulatory Flexibility Analysis Required: Yes. Agency...

  20. 78 FR 60667 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-10-02

    ... incorporation by reference of a certain other publication listed in this AD as of January 24, 2013 (78 FR 1723... 2, 2013 (78 FR 25666), and proposed to supersede AD 2012-26-51, Amendment 39-17312 (78 FR 1723... (78 FR 1723, January 9, 2013)] to require amendment of the AFM by incorporating the Airbus TR....

  1. 75 FR 79278 - Community Reinvestment Act Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-20

    .../communitydevelopment/programs/neighborhoodspg/arrafactsheet.cfm . \\5\\ 74 FR 21377 (May 7, 2009); 73 FR 58330 (Oct. 6... October 19, 2010. See 75 FR 64322 (Oct. 19, 2010). Section 2301(c) of HERA, as amended, establishes five... NSP funds. \\9\\ 75 FR 36016 (Jun. 24, 2010). Although the CRA rules expressly encourage activities...

  2. 75 FR 41696 - Appliance Labeling Rule

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-19

    ... uses the terms lamp, lightbulb, and bulb interchangeably. \\2\\ 74 FR 57950 (Nov. 10, 2009). \\3\\ The Rule... Rulemaking (``ANPR'') (73 FR 40988) seeking comment on potential label changes.\\5\\ The Commission then held a... ( http://www.ftc.gov/bcp/workshops/lamp/transcript.pdf ). \\7\\ See 73 FR 72800 (Dec. 1, 2008); 74 FR...

  3. 78 FR 39613 - Federal Pell Grant Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-02

    ... published an interim final rule in the Federal Register (77 FR 25893), corrected on July 11, 2012 (77 FR... calculating a Federal Pell Grant for a payment period (77 FR 25894); Removed the provision for awarding Federal Pell Grant payments from two Scheduled Awards (77 FR 25894); Specified when an institution...

  4. 78 FR 14999 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-08

    ... . SUPPLEMENTARY INFORMATION: Additions On 12/21/2012 (77 FR 75616); 12/31/2012 (77 FR 77038); 1/11/2013 (78 FR 2378); and 1/18/2013 (78 FR 4133-4134), the Committee for Purchase From People Who Are Blind or.... ADDRESSES: Committee for Purchase From People Who Are Blind or Severely Disabled, Jefferson Plaza 2,...

  5. 77 FR 64446 - Wireless Microphones Proceeding

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-22

    ... Docket No. 02-380, Second Memorandum Opinion and Order, 75 FR 75814, 25 FCC Rcd 18661 (2010) (TV White... Rulemaking, 75 FR 3622, 75 FR 3682, 25 FCC Rcd 643 (2010) (Wireless Microphones Order and Wireless... Memorandum Opinion and Order, 77 FR 29236, 27 FCC Rcd 3692 (2012). Background In the Wireless...

  6. 77 FR 3617 - Etoxazole; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-25

    ... Federal Register of February 25, 2011 (76 FR 10584) (FRL- 8863-3), EPA issued a notice pursuant to section... April 13, 2011 (76 FR 20537) (FRL-8867-5) ( http://www.gpo.gov/fdsys/pkg/FR-2011-04-13/pdf/2011-8550.pdf... Executive Order 12866, entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993). Because...

  7. 76 FR 27261 - Propiconazole; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-05-11

    ... Federal Register of March 19, 2010 (75 FR 13277) (FRL-8813- 2), EPA issued a notice pursuant to section... numerous previous occasions. Refer to Federal Register 70 FR 37686, June 30, 2005; 70 FR 1354, January 7, 2005; 69 FR 63096, October 29, 2004 for the Agency's response to these objections. V....

  8. 78 FR 72537 - Credit Union Service Organizations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-03

    ... requirements to FISCUs as well. \\1\\ 73 FR 79312 (Dec. 29, 2008). \\2\\ Id. Since the promulgation of the 2008... already apply to FCUs under Sec. 712.3(d). \\3\\ 76 FR 44866 (July 27, 2011). The proposed rule also added... essentially become unsustainable. \\9\\ 73 FR 79312 (Dec. 29, 2008). \\10\\ 73 FR 23982, 23984 (May 1, 2008)....

  9. 75 FR 32169 - Comprehensive Centers Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-07

    ... published in the Federal Register on June 3, 2005 (70 FR 53283) and corrected in the Federal Register on June 20, 2005 (70 FR 35415). On March 18, 2010, we published a notice in the Federal Register (75 FR... in the notice inviting applications published in the Federal Register on June 3, 2005 (70 FR...

  10. 77 FR 63270 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-16

    ... aluminum rivet, Part Number (P/N) ASNA2050DXJ040, is to connect the FR 24 to the FR 24 Tee. The hole where... of an A320 family aeroplane, it was discovered that a fastener was missing at FR 24 between stringer... Policies and Procedures (44 FR 11034, February 26, 1979); 3. Will not affect intrastate aviation in...

  11. 78 FR 52414 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-08-23

    ... aluminum rivet, Part Number (P/N) ASNA2050DXJ040, is to connect the FR 24 to the FR 24 Tee. The hole where... NPRM was published in the Federal Register on October 16, 2012 (77 FR 63270). The NPRM proposed to... of an A320 family aeroplane, it was discovered that a fastener was missing at FR 24 between...

  12. 75 FR 78636 - Truth in Lending

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-16

    ... transfer date shall be July 21, 2011. See 75 FR 57252 (Sept. 20, 2010). Accordingly, because Section 1100E... announced in separate rulemakings: Closed-End Mortgages (Docket No. R-1366) (74 FR 43232)(75 FR 58470), Home-Equity Lines of Credit (Docket No. R-1367) (74 FR 43428), Reverse Mortgages (Docket No. R-1390) (75...

  13. 75 FR 36016 - Community Reinvestment Act Regulations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-06-24

    .../ neighborhoodspg/arrafactsheet.cfm. \\5\\ 74 FR 21377 (May 7, 2009); 73 FR 58330 (Oct. 6, 2008). Section 2301(c)(3... higher percentages of low- and moderate-income individuals. \\7\\ 70 FR 44256 (Aug. 2, 2005), and 71 FR... requirements of the program, benefit low-, moderate-, and middle-income individuals and geographies...

  14. 78 FR 57927 - Credit Risk Retention

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-20

    ... proposal, as described in more detail below. \\5\\ Credit Risk Retention; Proposed Rule, 76 FR 24090 (April... legislation.''). \\24\\ See 78 FR 6408 (January 30, 2013), as amended by 78 FR 35430 (June 12, 2013). These two... Federal Register. See 76 FR 27390 (May 11, 2011). The Board had initial responsibility for...

  15. 77 FR 14679 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-13

    ... June 24, 2002 (67 FR 35425, May 20, 2002). ADDRESSES: You may examine the AD docket on the Internet at... in the Federal Register on October 19, 2011 (76 FR 64854), and proposed to supersede AD 97-22-13, Amendment 39-10185 (62 FR 58891, October 31, 1997); and AD 2002-10-06, Amendment 39-12752 (67 FR 35425,...

  16. 76 FR 23502 - Fee-Generating Cases

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-27

    ... applies only to LSC and private non-LSC funds. 76 FR 6381. On April 15, 2011, the LSC Board of Directors... unless'' one of the regulatory exceptions applied. 41 FR 18528 (proposed rule May 5, 1976), 41 FR 38505 (final rule Sept. 10, 1976), and 49 FR 19656 (final rule May 9, 1984) (the last final rule prior to...

  17. 76 FR 6381 - Fee-Generating Cases

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-04

    ... unless'' one of the regulatory exceptions applied. 41 FR 18528 (proposed rule May 5, 1976), 41 FR 38505 (final rule Sept. 10, 1976), and 49 FR 19656 (final rule May 9, 1984) (the last final rule prior to 1996... regulation of any significant substantive change in scope. 61 FR 45765 (proposed rule August 29, 1996) and...

  18. 77 FR 46257 - Access Authorization Fees; Correction

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-03

    ... Federal Register on May 3, 2012 (77 FR 26149) and confirmed on June 22, 2012 (77 FR 37553). The direct... INFORMATION: The NRC published a direct final rule in the Federal Register on May 3, 2012 (77 FR 26149) and a confirmation of the effective date on June 22, 2012 (77 FR 37553). The direct final rule amended the...

  19. 78 FR 44355 - Semiannual Regulatory Agenda

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-23

    ...: Action Date FR Cite Staff Sent Briefing Package to 09/21/11 Commission. NPRM 11/08/11 76 FR 69586... in the Federal 12/05/12 77 FR 72205 Register. Regulatory Flexibility Analysis Required: Yes. Agency... unanimously on November 8, 2012, and the final rule was published December 10, 2012 (77 FR 73294)....

  20. 76 FR 7767 - Student Health Insurance Coverage

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-02-11

    ... protections) (75 FR 37188 (June 28, 2010)), and section 2713 (regarding preventive health services) (75 FR..., 2010, implemented rules for preventive health services (75 FR 41726). Concerns have been raised as to... health care professional (75 FR 37188). Concerns have been expressed by stakeholders...

  1. 76 FR 47564 - Procurement List; Additions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-05

    ... . SUPPLEMENTARY INFORMATION: Additions On 4/22/2011 (76 FR 22680); 5/6/2011 (76 FR 26279); 6/3/2011 (76 FR 32146); and 6/10/2011 (76 FR 34064-34065), the Committee for Purchase From People ] Who Are Blind or Severely... military commissaries and exchanges as aggregated by the Defense Commissary Agency. USB Flash Drives,...

  2. 77 FR 45535 - Aldicarb; Proposed Tolerance Actions

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-08-01

    ... treated domestic commodities. In the Federal Register of October 7, 2010 (75 FR 62129) (FRL-8848- 1), EPA... FR 27226) (FRL-9348-2) and May 25, 2012 (77 FR 31355) (FRL-9351-4), EPA issued a cancellation order...) from review under Executive Order 12866, entitled ``Regulatory Planning and Review'' (58 FR...

  3. 77 FR 16484 - Annual Stress Test

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-03-21

    ...\\ \\1\\ See 77 FR 3408 (Jan. 24, 2012). \\2\\ Dodd-Frank Wall Street Reform and Consumer Protection Act... comment period would close on March 26, 2012.\\4\\ \\4\\ See 77 FR 3408 (Jan. 24, 2012). The OCC believes that... proposed rule from March 26, 2012 to April 30, 2012. \\5\\ See 77 FR 594 (Jan. 5, 2012). \\6\\ See 77 FR...

  4. 78 FR 25858 - National Practitioner Data Bank

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-03

    ...) 443-2300. SUPPLEMENTARY INFORMATION: I. Background In FR Doc. No. 2013-07521 of April 5, 2013 (78 FR... requirements. IV. Correction of Errors In FR Doc. No. 2013-07521 published April 5, 2013 (78 FR 20473), make..., Column 3, in Sec. 60.1, at lines 11 and 12, the phrase ``dentists and other health care...

  5. 78 FR 31890 - Antidisruptive Practices Authority

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-28

    ... rules of a DCM or SEF.\\7\\ \\5\\ 76 FR 14943 (Mar. 18, 2011). On November 2, 2010, the Commission issued an...-Frank Act. 75 FR 67301 (Nov. 2, 2010). The ANPR formed the basis for a roundtable held on December 2... 18, 2011. 76 FR 14826 (Mar. 18, 2011). \\6\\ 76 FR at 14945. The Commission also stated that a...

  6. 77 FR 57484 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-09-18

    ... June 25, 2012 (77 FR 37829), and proposed to supersede AD 2005-25-21, Amendment 39-14414 (70 FR 73919... corresponds to FAA AD 2005-25-21, Amendment 39-14414 (70 FR 73919, December 14, 2005)] was issued to update... participate in developing this AD. We received no comments on the NPRM (77 FR, 37829, June 25, 2012), or...

  7. 78 FR 31386 - Airworthiness Directives; Airbus Airplanes

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-24

    ... other publications listed in this AD as of March 4, 2010 (75 FR 4477, January 28, 2010). ADDRESSES: You... FR 68711), and proposed to supersede AD 2010-02-10, Amendment 39- 16181 (75 FR 4477, January 28, 2010...-0223 [which corresponds to FAA AD 2010-02-10, Amendment 39-16181 (75 FR 4477, January 28,...

  8. 77 FR 66785 - Proposed Flood Elevation Determinations

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-07

    ... combines all three notices to be used in lieu of the information published at 73 FR 4144, 75 FR 59192 and 76 FR 46705. The table provided here represents the flooding sources, location of referenced... rule published 76 FR 46705, in the August 3, 2011 issue of the Federal Register, FEMA published a...

  9. 76 FR 34883 - Pesticide Tolerances; Technical Amendments

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-15

    ... registrations'') to 40 CFR 180.1(l). 75 FR 76284 (December 8, 2010) (FRL-8853-8). No amendments were made to the... Orders 12866 (58 FR 51735, October 4, 1993) and Executive Order 13653 (76 FR 3821, January 21, 2011). Nor... specified in Executive Order 13175 (65 FR 67249, November 6, 2000). In addition, the agency has...

  10. 77 FR 45285 - Definition of Troubled Condition

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-07-31

    ... special assistance under sections 208 or 216 of the Act to avoid liquidation. 12 CFR 701.14(b)(3); 55 FR...'' for corporate credit unions in order to conform to the Corporate Risk Information System (CRIS). 64 FR... of NCUA regulations. \\1\\ 59 FR 36042 (July 15, 1994) (change of NCUA address); 60 FR 31911 (June...

  11. 78 FR 67847 - Debt Collection (Regulation F)

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-11-12

    ... application in the context of debt collection. Trade Regulation Rule: Credit Practices, 49 FR 7740 (Mar. 1..., 50 FR 16696 (Apr. 29, 1985) (Board); Consumer Protections; Unfair or Deceptive Credit Practices, 50 FR 19325 (May 8, 1985) (FHLBB); Federal Credit Union; Prohibited Lending Practices, 52 FR 35060...

  12. 78 FR 56202 - Ecological Restoration Policy

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-12

    ... 24, 1977. Protection and enhancement of environmental quality (35 FR 4247, March 7, 1970; 42 FR 26967... February 8, 1972. Use of off-road vehicles on the public lands. (37 FR 2877, February 9, 1972). Amended by.... Executive Order 11988 issued May 24, 1977. Floodplain management (42 FR 26951 (May 25, 1977)). This...

  13. 77 FR 66219 - Clearing Agency Standards

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-11-02

    ... to clear credit default swaps. See Exchange Act Release Nos. 60372 (July 23, 2009), 74 FR 37748 (July 29, 2009), 61973 (Apr. 23, 2010), 75 FR 22656 (Apr. 29, 2010) and 63389 (Nov. 29, 2010), 75 FR 75520 (Dec. 3, 2010) (CDS clearing by ICE Clear Europe Limited); 60373 (July 23, 2009), 74 FR 37740 (July...

  14. 75 FR 44093 - Truth in Lending

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-07-28

    ... June 29, 2010, (75 FR 37526) ] (FR Doc. 2010-14717) amending Regulation Z, which implements the Truth...'s amendatory instructions. This document corrects that error. 0 In final rule, FR Doc. 2010-14717, published on June 29, 2010, (75 FR 37526) make the following corrections: PART 226--TRUTH IN...

  15. 76 FR 23490 - Aluminum tris (O

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-04-27

    ... (75 FR 44184) (FRL-8834- 1), EPA issued a proposal to revise tolerance expressions for a number of... July 28, 2010 (75 FR 44184), which included proposals to revise the tolerance expressions for fenarimol..., 2010 (75 FR 56892) (FRL-8844-6), and March 9, 2011 (76 FR 12877) (FRL-8858-5),...

  16. 78 FR 46274 - Pyroxasulfone; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-31

    ... July 25, 2012 (77 FR 43562) (FRL-9353- 6), EPA issued a document pursuant to FFDCA section 408(d)(3.... See 77 FR 59577; FRL-9364-3 (Sept. 28, 2012). Also, in the Federal Register of August 22, 2012 (77 FR..., 2012 (77 FR 12207) (FRL-9334-2). C. Exposure Assessment 1. Dietary exposure from food and feed uses....

  17. 77 FR 73966 - Utah Regulatory Program

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-12

    ... of the Utah program in the January 21, 1981, Federal Register (46 FR 5899). You can also find later... receipt of the proposed amendment in the September 5, 2012, Federal Register (77 FR 54491), provided an... approved on December 3, 2007 (72 FR 68029) and November 14, 2008 (73 FR 67630). We notified Utah of...

  18. 76 FR 53641 - Tetraconazole; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-08-29

    ... Federal Register of September 8, 2010 (75 FR 54629) (FRL- 8843-3) and December 15, 2010 (75 FR 78240) (FRL... review under Executive Order 12866, entitled Regulatory Planning and Review (58 FR 51735, October 4, 1993... Supply, Distribution, or Use (66 FR 28355, May 22, 2001) or Executive Order 13045, entitled Protection...

  19. 78 FR 14461 - Fenpyrazamine; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-03-06

    ... Tolerance In the Federal Register of July 6, 2011 (76 FR 39358) (FRL-8875-6) and of July 20, 2011 (76 FR... Planning and Review'' (58 FR 51735, October 4, 1993). Because this final rule has been exempted from review... Concerning Regulations That Significantly Affect Energy Supply, Distribution, or Use'' (66 FR 28355, May...

  20. 78 FR 42693 - Hexythiazox; Pesticide Tolerances

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-17

    .... Summary of Petitioned-For Tolerance In the Federal Register of September 28, 2012 (77 FR 59578) (FRL- 9364-6), January 16, 2013 (78 FR 3377) (FRL-9375-4), and August 22, 2012 (77 FR 50661) (FRL-9358-9), EPA... Federal Register of February 8, 2013 (78 FR 9322) (FRL-9376-9). C. Exposure Assessment 1. Dietary...