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Sample records for frequency reactive magnetron

  1. Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties

    NASA Astrophysics Data System (ADS)

    Zhang, Yu; Xu, Jun; Wang, You-Nian; Choi, Chi Kyu; Zhou, Da-Yu

    2016-03-01

    Amorphous hafnium dioxide (HfO2) film was prepared on Si (100) by facing-target mid-frequency reactive magnetron sputtering under different oxygen/argon gas ratio at room temperature with high purity Hf target. 3D surface profiler results showed that the deposition rates of HfO2 thin film under different O2/Ar gas ratio remain unchanged, indicating that the facing target midfrequency magnetron sputtering system provides effective approach to eliminate target poisoning phenomenon which is generally occurred in reactive sputtering procedure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) demonstrated that the gradual reduction of oxygen vacancy concentration and the densification of deposited film structure with the increase of oxygen/argon (O2/Ar) gas flow ratio. Atomic force microscopy (AFM) analysis suggested that the surface of the as-deposited HfO2 thin film tends to be smoother, the root-meansquare roughness (RMS) reduced from 0.876 nm to 0.333 nm while O2/Ar gas flow ratio increased from 1/4 to 1/1. Current-Voltage measurements of MOS capacitor based on Au/HfO2/Si structure indicated that the leakage current density of HfO2 thin films decreased by increasing of oxygen partial pressure, which resulted in the variations of pore size and oxygen vacancy concentration in deposited thin films. Based on the above characterization results the leakage current mechanism for all samples was discussed systematically.

  2. Enhanced deposition of ZnO films by Li doping using radio frequency reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Liang-xian; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; Liu, Jin-long; Wei, Jun-jun

    2015-10-01

    Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (ZnO) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced ZnO films are obtained via Li doping. The average deposition rate for doped ZnO films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite-ZnO. X-ray diffraction analysis demonstrates that Li doping promotes the (002) preferential orientation in Li-doped ZnO films. However, an increase in the ZnO lattice constant, broadening of the (002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped ZnO will make significant applications in future surface acoustic wave devices.

  3. Frequency agile relativistic magnetrons

    SciTech Connect

    Levine, J.S.; Harteneck, B.D.; Price, H.D.

    1995-11-01

    The authors are developing a family of frequency agile relativistic magnetrons to continuously cover the bands from 1 to 3 GHz. They have achieved tuning ranges of > 33%. The magnetrons have been operated repetitively in burst mode at rates up to 100 pps for 10 sec. Power is extracted from two resonators, and is in the range of 400--600 MW, fairly flat across the tuning bandwidth. They are using a network of phase shifters and 3-dB hybrids to combine the power into a single arm and to provide a continuously adjustable attenuator.

  4. Development of mid-frequency AC reactive magnetron sputtering for fast deposition of Y2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Xiong, Jie; Xia, Yudong; Xue, Yan; Zhang, Fei; Guo, Pei; Zhao, Xiaohui; Tao, Bowan

    2014-02-01

    A reel-to-reel magnetron sputtering system with mid-frequency alternating current (AC) power supply was used to deposit double-sided Y2O3 seed layer on biaxially textured Ni-5 at.%W tape for YBa2Cu3O7-δ coated conductors. A reactive sputtering process was carried out using two opposite symmetrical sputtering guns with metallic yttrium targets and water vapor for oxidizing the sputtered metallic atoms. The voltage control mode of the power supply was used and the influence of the cathode voltage and ArH2 pressure were systematically investigated. Subsequently yttrium-stabilized zirconia (YSZ) barrier and CeO2 cap layers were deposited on the Y2O3 buffered substrates in sequence, indicating high quality and uniform double-sided structure and surface morphology of such the architecture.

  5. Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Ligang; Ma, Shuyi; Chen, Haixia; Ai, Xiaoqian; Huang, Xinli

    2011-09-01

    Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.

  6. On reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.

    2016-01-01

    High power impulse magnetron sputtering (HiPIMS) is an ionized physical vapor deposition (IPVD) technique that is particularly promising for reactive sputtering applications. However, there are few issues that have to be resolved before the full potential of this technique can be realized. Here we give an overview of the key experimental findings for the reactive HiPIMS discharge. An increase in the discharge current is commonly observed with increased partial pressure of the reactive gas or decreased repetition pulse frequency. There are somewhat conflicting claims regarding the hysteresis effect in the reactive HiPIMS discharge as some report reduction or elimination of the hysteresis effect while others claim a feedback control is essential. The ion energy distribution of the metal ion and the atomic ion of the reactive gas are similar and extend to very high energies while the ion energy distribution of the working gas and the molecular ion of the reactive gas are similar and are much less energetic.

  7. Growth of (Sr,La)-(Ta,Ti)-O-N perovskite oxide and oxynitride films by radio frequency magnetron sputtering: Influence of the reactive atmosphere on the film structure

    NASA Astrophysics Data System (ADS)

    Le Paven, C.; Le Gendre, L.; Benzerga, R.; Cheviré, F.; Tessier, F.; Jacq, S.; Traoré-Mantion, S.; Sharaiha, A.

    2015-03-01

    In the search for new dielectric and ferroelectric compounds, we were interested in the perovskite (Sr1-xLax)2(Ta1-xTix)2O7 solid solution with ferroelectric end members Sr2Ta2O7 (TCurie=-107 °C) and La2Ti2O7 (TCurie=1461 °C). In order to achieve a Curie temperature close to room temperature, the formulation with x=0.01 was chosen and synthetized as thin films by reactive radio-frequency magnetron sputtering. In oxygen rich plasma, a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 film is deposited, characterized by a band-gap Eg=4.75 eV and an (1 1 0) epitaxial growth on (0 0 1)MgO substrate. The use of nitrogen rich plasma allows to synthesize (Sr0.99La0.01)(Ta0.99Ti0.01)O2N oxynitride films, with band gap Eg~2.10 eV and a polycrystalline, textured or epitaxial growth on (0 0 1)MgO substrate. Nitrogen-substoichiometric oxynitride films with larger lattice cells are produced for low dinitrogen percentages in the sputtering plasma.

  8. Preparation of nitrogen-substituted TiO2 thin film photocatalysts by the radio frequency magnetron sputtering deposition method and their photocatalytic reactivity under visible light irradiation.

    PubMed

    Kitano, Masaaki; Funatsu, Keisho; Matsuoka, Masaya; Ueshima, Michio; Anpo, Masakazu

    2006-12-21

    Nitrogen-substituted TiO2 (N-TiO2) thin film photocatalysts have been prepared by a radio frequency magnetron sputtering (RF-MS) deposition method using a N2/Ar mixture sputtering gas. The effect of the concentration of substituted nitrogen on the characteristics of the N-TiO2 thin films was investigated by UV-vis absorption spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) analyses. The absorption band of the N-TiO2 thin film was found to shift smoothly to visible light regions up to 550 nm, its extent depending on the concentration of nitrogen substituted within the TiO2 lattice in a range of 2.0-16.5%. The N-TiO2 thin film photocatalyst with a nitrogen concentration of 6.0% exhibited the highest reactivity for the photocatalytic oxidation of 2-propanol diluted in water even under visible (lambda > or = 450 nm) or solar light irradiation. Moreover, N-TiO2 thin film photocatalysts prepared on conducting glass electrodes showed anodic photocurrents attributed to the photooxidation of water under visible light, its extent depending on wavelengths up to 550 nm. The absorbed photon to current conversion efficiencies reached 25.2% and 22.4% under UV (lambda = 360 nm) and visible light (lambda = 420 nm), respectively. UV-vis and photoelectrochemical investigations also confirmed that these thin films remain thermodynamically and mechanically stable even under heat treatment at 673 K. In addition, XPS and XRD studies revealed that a significantly high substitution of the lattice O atoms of the TiO2 with the N atoms plays a crucial role in the band gap narrowing of the TiO2 thin films, enabling them to absorb and operate under visible light irradiation as a highly reactive, effective photocatalyst. PMID:17165971

  9. Rotating cylindrical magnetron sputtering: Simulation of the reactive process

    SciTech Connect

    Depla, D.; Mahieu, S.; Van Aeken, K.; Leroy, W. P.; Haemers, J.; De Gryse, R.; Li, X. Y.; Bogaerts, A.

    2010-06-15

    A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.

  10. Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Kavitha, A.; Kannan, R.; Loganathan, S.

    2014-05-01

    Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300 V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.

  11. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, M.; Johnson, R.P.; Popovic, M.; Moretti, A.; /Fermilab

    2009-05-01

    Magnetrons are low-cost highly-efficient microwave sources, but they have several limitations, primarily centered about the phase and frequency stability of their output. When the stability requirements are low, such as for medical accelerators or kitchen ovens, magnetrons are the very efficient power source of choice. But for high energy accelerators, because of the need for frequency and phase stability - proton accelerators need 1-2 degrees source phase stability, and electron accelerators need .1-.2 degrees of phase stability - they have rarely been used. We describe a novel variable frequency cavity technique which will be utilized to phase and frequency lock magnetrons.

  12. The target heating influence on the reactive magnetron sputtering process

    NASA Astrophysics Data System (ADS)

    Bondarenko, A.; Kolomiytsev, A.; Shapovalov, V.

    2016-07-01

    A physicochemical model for the reactive magnetron sputtering of a “hot” target is described in this paper. The system consisting of eight algebraic equations was solved for a tantalum target sputtered in an O2 environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  13. Lateral variation of target poisoning during reactive magnetron sputtering

    SciTech Connect

    Guettler, D.; Groetzschel, R.; Moeller, W.

    2007-06-25

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar/N{sub 2} atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  14. Lateral variation of target poisoning during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Güttler, D.; Grötzschel, R.; Möller, W.

    2007-06-01

    The reactive gas incorporation into a Ti sputter target has been investigated using laterally resolving ion beam analysis during dc magnetron deposition of TiN in an Ar /N2 atmosphere. At sufficiently low reactive gas flow, the nitrogen incorporation exhibits a pronounced lateral variation, with a lower areal density in the target racetrack compared to the target center and edge. The findings are reproduced by model calculations. In the racetrack, the balance of reactive gas injection and sputter erosion is shifted toward erosion. The injection of nitrogen is dominated by combined molecular adsorption and recoil implantation versus direct ion implantation.

  15. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  16. Highly conducting ZnSe films by reactive magnetron sputtering

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Stirn, R. J.

    1986-01-01

    This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

  17. Ion-induced oxidation of aluminum during reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kreiter, Oliver; Grosse-Kreul, Simon; Corbella, Carles; von Keudell, Achim

    2013-04-01

    Particle beam experiments were conducted in an ultra-high-vacuum vessel to mimic target poisoning during reactive magnetron sputtering of aluminum. Aluminum targets were exposed to quantified beams of argon ions, oxygen atoms and molecules, and aluminum vapour. The growth and etch rates were measured in situ by means of an Al-coated quartz crystal microbalance. The chemical state of the target surface was monitored in-situ by real-time Fourier transform infrared spectroscopy. The surface processes were modelled through a set of balance equations providing sputter yields and sticking coefficients. The results indicate that the oxygen uptake of the aluminum surface is enhanced by a factor 1 to 2 by knock-on implantation and that the deposition of aluminum is not affected by the oxidation state of the surface.

  18. Phase and Frequency Locked Magnetrons for SRF Sources

    SciTech Connect

    Neubauer, Michael; Johnson, Rolland

    2014-09-12

    There is great potential for a magnetron power source that can be controlled both in phase and frequency. Such a power source could revolutionize many particle accelerator systems that require lower capital cost and/or higher power efficiency. Beyond the accelerator community, phase and frequency locked magnetons could improve radar systems around the world and make affordable phased arrays for wireless power transmission for solar powered satellites. This joint project of Muons, Inc., Fermilab, and L-3 CTL was supported by an STTR grant monitored by the Nuclear Physics Office of the DOE Office of Science. The object of the program was to incorporate ferrite materials into the anode of a magnetron and, with appropriate biasing of the ferrites, to maintain frequency lock and to allow for frequency adjustment of the magnetron without mechanical tuners. If successful, this device would have a dual use both as a source for SRF linacs and for military applications where fast tuning of the frequency is a requirement. In order to place the materials in the proper location, several attributes needed to be modeled. First the impact of the magnetron’s magnetic field needed to be shielded from the ferrites so that they were not saturated. And second, the magnetic field required to change the frequency of the magnetron at the ferrites needed to be shielded from the region containing the circulating electrons. ANSYS calculations of the magnetic field were used to optimize both of these parameters. Once the design for these elements was concluded, parts were fabricated and a complete test assembly built to confirm the predictions of the computer models. The ferrite material was also tested to determine its compatibility with magnetron tube processing temperatures. This required a vacuum bake out of the chosen material to determine the cleanliness of the material in terms of outgassing characteristics, and a subsequent room temperature test to verify that the characteristics of

  19. Hysteresis behavior during reactive magnetron sputtering of Al{sub 2}O{sub 3} using a rotating cylindrical magnetron

    SciTech Connect

    Depla, D.; Haemers, J.; Buyle, G.; Gryse, R. de

    2006-07-15

    Rotating cylindrical magnetrons are used intensively on industrial scale. A rotating cylindrical magnetron on laboratory scale makes it possible to study this deposition technique in detail and under well controlled conditions. Therefore, a small scale rotating cylindrical magnetron was designed and used to study the influence of the rotation speed on the hysteresis behavior during reactive magnetron sputtering of aluminum in Ar/O{sub 2} in dc mode. This study reveals that the hysteresis shifts towards lower oxygen flows when the rotation speed of the target is increased, i.e., target poisoning occurs more readily when the rotation speed is increased. The shift is more pronounced for the lower branch of the hysteresis loop than for the upper branch of the hysteresis. This behavior can be understood qualitatively. The results also show that the oxidation mechanism inside the race track is different from the oxidation mechanism outside the race track. Indeed, outside the race track the oxidation mechanism is only defined by chemisorption while inside the race track reactive ion implantation will also influence the oxidation mechanism.

  20. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NASA Astrophysics Data System (ADS)

    van Hattum, E. D.

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology, where the SiOx layer is used as the charge retention layer on the drums for copying and printing devices. The thesis describes investigations of the plasma and of processes taking place on the sputter target and on the SiOx growth surface in the room temperature, RF reactive magnetron plasma sputter deposition technology. The sputtering target consists of silicon and the reactive atmosphere consists of an Ar/O2 mixture. The composition of the grown SiOx layers has been varied between x=0 and x=2 by variation of the O2 partial pressure. The characteristics of the growth process have been related to the nanostructural properties of the grown films. The deposition system enables the characterisation of the plasma (Langmuir probe, energy resolved mass spectrometer) and of the growing film (Elastic Recoil Detection (ERD), Fourier transform infrared absorption spectroscopy) and is connected to a beamline of a 6MV tandem van de Graaff accelerator. Also Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy have been applied. It is shown how ERD can be used as a real-time in-situ technique. The thesis presents spatially resolved values of the ion density, electron temperature and the quasi-electrostatic potential, determined using a Langmuir probe. The plasma potential has a maximum about 2 cm from the cathode erosion area, and decreases (more than 200 V typically) towards the floating sputter cathode. The potential decreases slightly in the direction towards the grounded growth surface and the positive, mainly Ar+, ions created in the large volume of the plasma closest to the substrate are accelerated towards the growth surface. These ions obtain a few eV of

  1. Current-voltage-time characteristics of the reactive Ar/N{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Magnus, F.; Sveinsson, O. B.; Olafsson, S.; Gudmundsson, J. T.

    2011-10-15

    The discharge current and voltage waveforms have been measured in a reactive high power impulse magnetron sputtering (HiPIMS) Ar/N{sub 2} discharge with a Ti target for 400 {mu}s long pulses. We observe that the current waveform in the reactive Ar/N{sub 2} HiPIMS discharge is highly dependent on the pulse repetition frequency, unlike the non-reactive Ar discharge. The current is found to increase significantly as the frequency is lowered. This is attributed to an increase in the secondary electron emission yield during the self-sputtering phase, when the nitride forms on the target at low frequencies. In addition, self-sputtering runaway occurs at lower discharge voltages when nitrogen is added to the discharge. This illustrates the crucial role of self-sputtering in the behavior of the reactive HiPIMS discharge.

  2. Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hembram, K. P. S. S.; Dutta, Gargi; Waghmare, Umesh V.; Mohan Rao, G.

    2007-10-01

    Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comparable to the average grain size of the thin film which is about 6 nm obtained from X-ray diffraction. The film annealed at 873 K exhibits an optical band gap of around 4.83 eV and shows +4 oxidation state of zirconium indicating fully oxidized zirconium, whereas higher annealing temperatures lead to oxygen deficiency in the films and this is reflected in their properties. A discontinuity in the imaginary part of the AC conductivity was observed in the frequency range of tens of thousands of Hz, where as, the real part does not show such behavior.

  3. Analysis of Low Frequency Oscillations in Magnetron Injection Guns

    NASA Astrophysics Data System (ADS)

    Pu, Youlei; Luo, Yong; Yan, Ran; Liu, Guo; Jiang, Wei

    2012-02-01

    In our gyro-TWT experiments, low-frequency oscillations (LFOs) had been observed. LFOs is a physical phenomenon usually caused by the electrons trapped between the magnetron injection guns (MIGs) and the interaction region. In this paper, the formation procedure and physical mechanism of LFOs are reported. Available methods including optimizing the magnetic field distribution in the beam compression region and loading bevel cuts on the second anode are involved to capture the trapped electrons, suppress the LFOs and improve the helical electron beam quality. Simulations and experimental results are in good agreement with each other and also reveal the reasonableness of this means. Finally, the influence of current capture ratio on LFOs and the beam quality are studied. With the current capture ratio increasing, the amplitude of LFOs decreases, the pitch factor maintains a constant about 1.2 and we also demonstrate a low transverse velocity spread about 3%.

  4. Study of hysteresis behavior in reactive sputtering of cylindrical magnetron plasma

    NASA Astrophysics Data System (ADS)

    Kakati, H.; M. Borah, S.

    2015-12-01

    In order to make sufficient use of reactive cylindrical magnetron plasma for depositing compound thin films, it is necessary to characterize the hysteresis behavior of the discharge. Cylindrical magnetron plasmas with different targets namely titanium and aluminium are studied in an argon/oxygen and an argon/nitrogen gas environment respectively. The aluminium and titanium emission lines are observed at different flows of reactive gases. The emission intensity is found to decrease with the increase of the reactive gas flow rate. The hysteresis behavior of reactive cylindrical magnetron plasma is studied by determining the variation of discharge voltage with increasing and then reducing the flow rate of reactive gas, while keeping the discharge current constant at 100 mA. Distinct hysteresis is found to be formed for the aluminium target and reactive gas oxygen. For aluminium/nitrogen, titanium/oxygen and titanium/nitrogen, there is also an indication of the formation of hysteresis; however, the characteristics of variation from metallic to reactive mode are different in different cases. The hysteresis behaviors are different for aluminium and titanium targets with the oxygen and nitrogen reactive gases, signifying the difference in reactivity between them. The effects of the argon flow rate and magnetic field on the hysteresis are studied and explained. Project supported by the Department of Science and Technology, Government of India and Council of Scientific and Industrial Research, India.

  5. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    SciTech Connect

    Hänninen, Tuomas Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  6. Observation of a periodic runaway in the reactive Ar/O{sub 2} high power impulse magnetron sputtering discharge

    SciTech Connect

    Shayestehaminzadeh, Seyedmohammad E-mail: shayesteh@mch.rwth-aachen.de; Arnalds, Unnar B.; Magnusson, Rögnvaldur L.; Olafsson, Sveinn

    2015-11-15

    This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti) with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide) mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O{sub 2} discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  7. Effects of Substrate Temperature on ZAO Thin Film Prepared by DC Magnetron Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Lu, F.; Zhou, X. G.; Xu, C. H.; Wen, L. S.

    The effects of substrate temperature on the resistivity and transmittance of ZAO thin films prepared by DC magnetron reactive sputtering have been investigated. The properties of the samples have been analyzed through Hall effect, X-ray diffraction and SEM. The results show that carrier concentration, Hall mobility and crystallinity of the films depend obviously on the deposition temperature. The film deposited at the range 200-250°C has lower resistivity and higher transmittance.

  8. Effect of pulse frequency on the ion fluxes during pulsed dc magnetron sputtering

    SciTech Connect

    Rahamathunnisa, M.; Cameron, D. C.

    2009-03-15

    The ion fluxes and energies which impinge on the substrate during the deposition of chromium nitride by asymmetric bipolar pulsed dc reactive magnetron sputtering have been analyzed using energy resolved mass spectrometry. It has been found that there is a remarkable increase in ion flux at higher pulse frequencies and that the peak ion energy is directly related to the positive voltage overshoot of the target voltage. The magnitude of the metal flux depositing on the substrate is consistent with a 'dead time' of {approx}0.7 {mu}s at the start of the on period. The variation of the ion flux with pulse frequency has been explained by a simple model in which the ion density during the on period has a large peak which is slightly delayed from the large negative voltage overshoot which occurs at the start of the on pulse due to increased ionization at that time. This is consistent with the previously observed phenomena in pulsed sputtering.

  9. Gas barrier properties of titanium oxynitride films deposited on polyethylene terephthalate substrates by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, M.-C.; Chang, L.-S.; Lin, H. C.

    2008-03-01

    Titanium oxynitride (TiN xO y) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiN xO y films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm 2 to 7 W/cm 2. The maximum deposition rate occurs, as the substrate bias is -40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiN xO y films deposited at power densities above 4 W/cm 2 show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiN xO y films reach values as low as 0.98 g/m 2-day-atm and 0.60 cm 3/m 2-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al 2O 3 barrier films. Therefore, TiN xO y films are potential candidates to be used as a gas permeation barrier for PET substrate.

  10. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    NASA Astrophysics Data System (ADS)

    Shimizu, T.; Villamayor, M.; Lundin, D.; Helmersson, U.

    2016-02-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar-N2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf-N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail.

  11. Theoretical investigation of resonant frequencies of unstrapped magnetron with arbitrary side resonators

    SciTech Connect

    Yue, Song; Zhang, Zhao-chuan; Gao, Dong-ping

    2015-04-15

    In this paper, a sector steps approximation method is proposed to investigate the resonant frequencies of magnetrons with arbitrary side resonators. The arbitrary side resonator is substituted with a series of sector steps, in which the spatial harmonics of electromagnetic field are also considered. By using the method of admittance matching between adjacent steps, as well as field continuity conditions between side resonators and interaction regions, the dispersion equation of magnetron with arbitrary side resonators is derived. Resonant frequencies of magnetrons with five common kinds of side resonators are calculated with sector steps approximation method and computer simulation softwares, in which the results have a good agreement. The relative error is less than 2%, which verifies the validity of sector steps approximation method.

  12. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  13. Preparation of DC reactive magnetron sputtered ZnO thin film towards photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Prabhu, M.; Sivanantham, A.; Kannan, P. Karthick; Vishnukanthan, V.; Mayandi, J.

    2013-06-01

    Zinc oxide thin films deposited on glass and p-type silicon (100) substrates by DC reactive magnetron sputtering are reported here. The XRD investigations confirmed that the thin films deposited by this technique have hexagonal wurtzite structure. AFM results present the surface morphology and roughness of the deposited thin films. From the optical absorption spectrum, the band gap of the thin film is found to be ˜ 3.2 eV. The photoluminescence spectrum of the sample has an UV emission peak centered at 407 nm with broad visible emission in the range of 500-580 nm.

  14. Aluminium nitride piezoelectric thin films reactively deposited in closed field unbalanced magnetron sputtering for elevated temperature 'smart' tribological applications

    NASA Astrophysics Data System (ADS)

    Hasheminiasari, Masood

    "Smart" high temperature piezoelectric aluminum nitride (AlN) thin films were synthesized by reactive magnetron sputtering using DC; pulsed-DC, and deep oscillation modulated pulsed power (DOMPP) systems on variety of substrate materials. Process optimization was performed to obtain highly c-axis texture films with improved piezoelectric response via studying the interplay between process parameters, microstructure and properties. AlN thin films were sputtered with DC and pulsed-DC systems to investigate the effect of various deposition parameters such as reactive gas ratio, working pressure, target power, pulsing frequency, substrate bias, substrate heating and seed layers on the properties and performance of the film device. The c-axis texture, orientation, microstructure, and chemical composition of AlN films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. Thin films with narrow AlN-(002) rocking curve of 2.5° were obtained with preliminary studies of DOMPP reactive sputtering. In-situ high temperature XRD showed excellent thermal stability and oxidation resistance of AlN films up to 1000 °C. AlN films with optimized processing parameters yielded an inverse piezoelectric coefficient, d33 of 4.9 pm/V close to 90 percent of its theoretical value.

  15. Raman spectroscopy of copper oxide films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Levitskii, V. S.; Shapovalov, V. I.; Komlev, A. E.; Zav'yalov, A. V.; Vit'ko, V. V.; Komlev, A. A.; Shutova, E. S.

    2015-11-01

    Raman spectroscopy has been used to study the influence of partial oxygen pressure during deposition and isothermal treatment on the chemical composition of copper oxide films deposited by reactive dc magnetron sputtering of copper target in a reactive gaseous medium. Three series of films deposited at various partial oxygen pressures (from 0.06 to 0.16 mTorr) possessed different chemical compositions. The subsequent thermal treatment of all samples was performed for 30 min in air at a constant temperature in a 300?500°C interval. An increase in the annealing temperature led to chemical changes in the films. After isothermal treatment at 450°C, the films in all series acquired stoichiometric CuO composition.

  16. Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering

    SciTech Connect

    Zhang, X.L.; Hui, K.N.; Hui, K.S.; Singh, Jai

    2013-03-15

    Highlights: ► High-quality ZnO thin films were deposited at room temperature. ► Effect of O{sub 2} flow and RF sputtering voltages on properties of ZnO films were studied. ► O{sub 2}/Ar ratios played a key role in controlling optical properties of ZnO films. ► Photoluminescence intensity of the ZnO films strongly depended on O{sub 2}/Ar ratios. ► Crystallite size, stress and strain strongly depended on O{sub 2}/Ar ratios. - Abstract: ZnO thin films were deposited onto quartz substrates by radio frequency (RF) reactive magnetron sputtering using a Zn target. The structural and optical properties of the ZnO thin films were investigated comprehensively by X-ray diffraction (XRD), ultraviolet–visible and photoluminescence (PL) measurements. The effects of the oxygen content of the total oxygen–argon mixture and sputtering voltage in the sputtering process on the structural and optical properties of the ZnO films were studied systemically. The microstructural parameters, such as the lattice constant, crystallite size, stress and strain, were also calculated and correlated with the structural and optical properties of the ZnO films. In addition, the results showed that the crystalline quality of ZnO thin films improved with increasing O{sub 2}/Ar gas flow ratio from 2:8 to 8:2. XRD and PL spectroscopy revealed 800 V to be the most appropriate sputtering voltage for ZnO thin film growth. High-quality ZnO films with a good crystalline structure, tunable optical band gap as well as high transmittance could be fabricated easily by RF reactive magnetron sputtering, paving the way to obtaining cost-effective ZnO thin films transparent conducting oxides for optoelectronics applications.

  17. Tribological Properties of CrN/AlN Films Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Rojo, A.; Solís, J.; Oseguera, J.; Salas, O.; Reichelt, R.

    2010-04-01

    The microstructure of CrN/AlN films, prepared by reactive magnetron sputtering under various conditions, was analyzed and related to the wear behavior of the films. One set of films was prepared by conventional reactive magnetron sputtering, a second set adding an extra amount of reactive gas to the initial Ar + N2 mixture and a third set adding an extra source of nitrogen near the substrate during sputtering. The samples were analyzed by scanning electron microscopy + energy dispersive microanalysis, high resolution scanning electron microscopy, atomic force microscopy, and x-ray diffraction. The results of the microstructural analysis revealed a clear difference in the morphology growth of the films when extra nitrogen was used compared to the conventionally prepared films. Formation of CrN was significantly faster than that of AlN. The most effective method to produce AlN was to introduce extra nitrogen. Pin-on-disk wear experiments were carried out in ambient air, to investigate the tribological behavior of the CrN/AlN system against a steel ball under dry conditions for various loads and a constant sliding speed. The results revealed that tribological properties of the layers improved unlike those of the untreated H13 steel. The friction behavior is closely related to the structure of the deposited films. The thicker CrN layer contributed to the higher load capacity of the coated steel when compared to the unmodified steel. However, wear life for the coating system was very short, denoted by the fairly poor adhesion of the film system to the steel substrate.

  18. The spatial distribution of negative oxygen ion densities in a dc reactive magnetron discharge

    NASA Astrophysics Data System (ADS)

    Scribbins, Steven; Bowes, Michael; Bradley, James W.

    2013-01-01

    Using Langmuir probe-assisted eclipse laser photodetachment, the spatial distribution of O- densities in the bulk plasma of magnetron sputter tool has been determined for a range of pressures, 0.79 to 2.40 Pa. The discharge was operated in dc (200 W) with a Ti target and a fixed oxygen-argon pressure ratio of 0.2, in poisoned mode. Measurements show significant O- densities occupying an annulus downstream from the magnetic trap in regions of most positive plasma potential. With increasing pressure the region of high O- density expands and the peak densities increase reaching ˜1.5 × 1016 m-3 at 2.40 Pa, corresponding to an O- to electron density ratio (electronegativity α) of ˜2. Outside the area of dense negative ions, and in regions of the magnetic trap accessible to our probe we measure α < 0.2. The results show that these reactive magnetron plasmas, utilized for oxide film production, to be highly electronegative in regions close to the substrate.

  19. Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Vogl, G. W.; Monz, K. H.; Nguyen, Quang D.; Huter, Michael; Rille, Eduard P.; Pulker, Hans K.

    1994-11-01

    In this work the properties of Si3N4 and AIN thin films deposited onto unheated substrates by Reactive Low Voltage Ion Plating (RLVIP) and Reactive DC-Magnetron Sputtering (RDCMS) were investigated. In both experimental setups pure silicon and aluminum were used as starting materials. Working and reactive gas were argon and nitrogen respectively. All Si3N4 films showed amorphous structure in X-ray and electron diffraction whereas AIN films were found to be polycrystalline and could be indexed to the bulk hexagonal AIN lattice. The values of the film refractive index at 550 nm are 2.08 for RLVIP Si3N4, 2.12 for RLVIP AIN, 2.02 for RDCMS Si3N4, and 1.98 or 2.12 for AIN depending on the total pressure in the range of 8 E - 1 Pa and 1 E - 1 Pa during the process. The high optical transmission region for the Si3N4 films lies between 0.23 and 9.5 micrometers , and for AIN films between 0.2 and 12.5 micrometers . Purity and composition were measured by electron microprobe, infrared transmission, nuclear reactions, elastic recoil detection analysis and Rutherford backscattering spectroscopy. Transmission electron micrographs of Pt-C replicas of fracture cross sections of the films show their different microstructure and surface topography. Environmental tests proved the RLVIP Si3N4 films to be very hard, of high density and of strong adherence to glass.

  20. Formation of low-frequency periodic structures in a pulsed magnetron discharge

    NASA Astrophysics Data System (ADS)

    Kaziev, A. V.; Khodachenko, G. V.; Kharkov, M. M.

    2016-01-01

    Periodic plasma structures are observed in non-sputtering magnetron discharge (NSMD) that is the transient quasi-stationary low-voltage regime between the high-current magnetron discharge (HCIMD) and an arc. The fast camera imaging synchronized with the magnetic probe diagnostics reveals the correlation between the observed rotation of the plasma inhomogeneities and the magnetic field perturbation behaviour. The frequencies of the periodic processes fall into kHz-range. A simple analytical model of the ionization instability in crossed electric and magnetic fields is suggested for the low-pressure discharge case. Using the model, the possible ranges of wavelengths and frequencies for the plasma inhomogeneities are evaluated. The results show good agreement between the experimental data and theory.

  1. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  2. Controlled formation of anatase and rutile TiO2 thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rafieian, Damon; Ogieglo, Wojciech; Savenije, Tom; Lammertink, Rob G. H.

    2015-09-01

    We discuss the formation of TiO2 thin films via DC reactive magnetron sputtering. The oxygen concentration during sputtering proved to be a crucial parameter with respect to the final film structure and properties. The initial deposition provided amorphous films that crystallise upon annealing to anatase or rutile, depending on the initial sputtering conditions. Substoichiometric films (TiOx<2), obtained by sputtering at relatively low oxygen concentration, formed rutile upon annealing in air, whereas stoichiometric films formed anatase. This route therefore presents a formation route for rutile films via lower (<500 °C) temperature pathways. The dynamics of the annealing process were followed by in situ ellipsometry, showing the optical properties transformation. The final crystal structures were identified by XRD. The anatase film obtained by this deposition method displayed high carriers mobility as measured by time-resolved microwave conductance. This also confirms the high photocatalytic activity of the anatase films.

  3. Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering.

    PubMed

    Ye, Z Z; Tang, J F

    1989-07-15

    Transparent conducting ZnO films have been prepared by modified S-gun reactive dc magnetron sputtering using an indium doped Zn target. Films with a resistivity of 1.08 x 10(-3) Omega cm and average transmittance of over 80% in the visible region were obtained. The influence of indium content at the surface of Zn target on the resistivity and transmittance of ZnO films was investigated. Optical properties of ZnO films in the 0.2-2.5-microm range were modeled by the Drude theory of free electrons. The reflectance of ZnO films in the 2.5-26.0-microm region was calculated. PMID:20555606

  4. Research on titanium nitride thin films deposited by reactive magnetron sputtering for MEMS applications

    NASA Astrophysics Data System (ADS)

    Merie, Violeta; Pustan, Marius; Negrea, Gavril; Bîrleanu, Corina

    2015-12-01

    Titanium nitride can be used among other materials as diffusion barrier for MEMS (microelectromechanical systems) applications. The aim of this study is to elaborate and to characterize at nanoscale titanium nitride thin films. The thin films were deposited by reactive magnetron sputtering on silicon substrates using a 99.99% purity titanium target. Different deposition parameters were employed. The deposition temperature, deposition time, substrate bias voltage and the presence/absence of a titanium buffer layer are the parameters that were modified. The so-obtained films were then investigated by atomic force microscopy. A significant impact of the deposition parameters on the determined mechanical and tribological characteristics was highlighted. The results showed that the titanium nitride thin films deposited for 20 min at room temperature without the presence of a titanium buffer layer when a negative bias of -90 V was applied to the substrate is characterized by the best tribological and mechanical behavior.

  5. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  6. Deposition of ultrahard Ti-Si-N coatings by pulsed high-current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oskomov, K. V.; Zakharov, A. N.; Rabotkin, S. V.; Solov'ev, A. A.

    2016-02-01

    We report on the results of investigation of properties of ultrahard Ti-Si-N coatings deposited by pulsed high-current magnetron reactive sputtering (discharge pulse voltage is 300-900 V, discharge pulse current is up to 200 A, pulse duration is 10-100 μs, and pulse repetition rate is 20-2000 Hz). It is shown that for a short sputtering pulse (25 μs) and a high discharge current (160 A), the films exhibit high hardness (66 GPa), wear resistance, better adhesion, and a lower sliding friction coefficient. The reason is an enhancement of ion bombardment of the growing coating due to higher plasma density in the substrate region (1013 cm-3) and a manifold increase in the degree of ionization of the plasma with increasing peak discharge current (mainly due to the material being sputtered).

  7. Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

    NASA Astrophysics Data System (ADS)

    Petrantoni, M.; Rossi, C.; Salvagnac, L.; Conédéra, V.; Estève, A.; Tenailleau, C.; Alphonse, P.; Chabal, Y. J.

    2010-10-01

    Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon-oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (<50 MPa) multilayered nanoenergetic material, each layer being in the range of tens nanometer to one micron. The reaction temperature and heat of reaction were measured using differential scanning calorimetry and thermal analysis to compare nanostructured layered materials to microstructured materials. For the nanostructured multilayers, all the energy is released before the Al melting point. In the case of the microstructured samples at least 2/3 of the energy is released at higher temperatures, between 1036 and 1356 K.

  8. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-01

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al2O3, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  9. Structural and thermal properties of nanocrystalline CuO synthesized by reactive magnetron sputtering

    SciTech Connect

    Verma, M.; Gupta, V. K.; Gautam, Y. K.; Dave, V.; Chandra, R.

    2014-01-28

    Recent research has shown immense application of metal oxides like CuO, MgO, CaO, Al{sub 2}O{sub 3}, etc. in different areas which includes chemical warfare agents, medical drugs, magnetic storage media and solar energy transformation. Among the metal oxides, CuO nanoparticles are of special interest because of their excellent gas sensing and catalytic properties. In this paper we report structural and thermal properties of CuO synthesized by reactive magnetron DC sputtering. The synthesized nanoparticles were characterized by X-ray diffractometer. The XRD result reveals that as DC power increased from 30W to 80W, size of the CuO nanoparticles increased. The same results have been verified through TEM analysis. Thermal properties of these particles were studied using thermogravimetry.

  10. Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

    NASA Technical Reports Server (NTRS)

    Kusano, E.; Theil, J. A.; Thornton, John A.

    1988-01-01

    It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

  11. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    SciTech Connect

    Moreira, Milena A.; Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  12. Physical properties of erbium implanted tungsten oxide filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-11-08

    Amorphous and partially crystalline WO3 thin films wereprepared by reactive dual magnetron sputtering and successively implantedby erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015ions/cm2. The electrical and optical properties were studied as afunction of the film deposition parameters and the ion fluence. Ionimplantation caused a strong decrease of the resistivity, a moderatedecrease of the index of refraction and a moderate increase of theextinction coefficient in the visible and near infrared, while theoptical band gap remained almost unchanged. These effects could belargely ascribed to ion-induced oxygen deficiency. When annealed in air,the already low resistivities of the implanted samples decreased furtherup to 70oC, whereas oxidation, and hence a strong increase of theresistivity, was observed at higher annealing temperatures.

  13. Characteristics of DLC containing Ti and Zr films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ma, Guojia; Lin, Guoqiang; Sun, Gang; Zhang, Huafang; Wu, Hongchen

    The purpose of this paper is to investigate metal doping effects on micro-structural, mechanical and corrosive behavior of the DLC film. Ti and Zr doped DLC films were prepared on NiTi alloys by reactive magnetron sputtering combined with plasma source ion implantation (PSII) technology used to improve the coherent strength, respectively. The mechanical properties of the doped DLC films were investigated by means of nano-indentation technique, microscratch and frictional wear testing. The potentiodynamic polarization measurement was employed to value the corrosion resistance of DLC with Ti and Zr films in Hank's simulated body fluid. It was found that Ti-doped DLC films embraced higher nano-hardness, somewhat lower coefficient of friction and better corrosion resistance than Zr-doped DLC films.

  14. Amorphous stainless steel coatings prepared by reactive magnetron-sputtering from austenitic stainless steel targets

    NASA Astrophysics Data System (ADS)

    Cusenza, Salvatore; Schaaf, Peter

    2009-01-01

    Stainless steel films were reactively magnetron sputtered in argon/methane gas flow onto oxidized silicon wafers using austenitic stainless-steel targets. The deposited films of about 200 nm thickness were characterized by conversion electron Mössbauer spectroscopy, magneto-optical Kerr-effect, X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectrometry, atomic force microscopy, corrosion resistance tests, and Raman spectroscopy. These complementary methods were used for a detailed examination of the carburization effects in the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of the substrate temperature and of post vacuum-annealing were examined to achieve a comprehensive understanding of the carburization process and phase formation.

  15. Hydroxyapatite thin films grown by pulsed laser deposition and radio-frequency magnetron sputtering: comparative study

    NASA Astrophysics Data System (ADS)

    Nelea, V.; Morosanu, C.; Iliescu, M.; Mihailescu, I. N.

    2004-04-01

    Hydroxyapatite (HA) thin films for applications in the biomedical field were grown by pulsed laser deposition (PLD) and radio-frequency magnetron sputtering (RF-MS) techniques. The depositions were performed from pure hydroxyapatite targets on Ti-5Al-2.5Fe (TiAlFe) alloys substrates. In order to prevent the HA film penetration by Ti atoms or ions diffused from the Ti-based alloy during and after deposition, the substrates were pre-coated with a thin buffer layer of TiN. In both cases, TiN was introduced by reactive PLD from TiN targets in low-pressure N 2. The PLD films were grown in vacuum onto room temperature substrates. The RF-MS films were deposited in low-pressure argon on substrates heated at 550 °C. The initially amorphous PLD thin films were annealed at 550 °C for 1 h in ambient air in order to restore the initial crystalline structure of HA target. The thickness of the PLD and RF-MS films were ˜1 μm and ˜350 nm, respectively. All films were structurally studied by scanning electron microscopy (SEM), grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray spectrometry (EDS) and white light confocal microscopy (WLCM). The mechanical properties of the films were tested by Berkovich nano-indentation. Both PLD and RF-MS films mostly contain HA phase and exhibit good mechanical characteristics. Peaks of CaO were noticed as secondary phase in the GIXRD patterns only for RF-MS films. By its turn, the sputtered films were smoother as compared to the ones deposited by PLD (50 nm versus 250 nm average roughness). The RF-MS films were harder, more mechanically resistant and have a higher Young modulus.

  16. Duty cycle control in reactive high-power impulse magnetron sputtering of hafnium and niobium

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Treverrow, B.; Murdoch, B.; Xie, D.; Ross, A. E.; Partridge, J. G.; Falconer, I. S.; McCulloch, D. G.; McKenzie, D. R.; Bilek, M. M. M.

    2016-06-01

    Instabilities in reactive sputtering have technological consequences and have been attributed to the formation of a compound layer on the target surface (‘poisoning’). Here we demonstrate how the duty cycle of high power impulse magnetron sputtering (HiPIMS) can be used to control the surface conditions of Hf and Nb targets. Variations in the time resolved target current characteristics as a function of duty cycle were attributed to gas rarefaction and to the degree of poisoning of the target surface. As the operation transitions from Ar driven sputtering to metal driven sputtering, the secondary electron emission changes and reduces the target current. The target surface transitions smoothly from a poisoned state at low duty cycles to a quasi-metallic state at high duty cycles. Appropriate selection of duty cycle increases the deposition rate, eliminates the need for active regulation of oxygen flow and enables stable reactive deposition of stoichiometric metal oxide films. A model is presented for the reactive HIPIMS process in which the target operates in a partially poisoned mode with different degrees of oxide layer distribution on its surface that depends on the duty cycle. Finally, we show that by tuning the pulse characteristics, the refractive indices of the metal oxides can be controlled without increasing the absorption coefficients, a result important for the fabrication of optical multilayer stacks.

  17. Synthesizing mixed phase titania nanocomposites with enhanced photoactivity and redshifted photoresponse by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Le

    Recent work points out the importance of the solid-solid interface in explaining the high photoactivity of mixed phase TiO2 catalysts. The goal of this research was to probe the synthesis-structure-function relationships of the solid-solid interfaces created by the reactive direct current (DC) magnetron sputtering of titanium dioxide. I hypothesize that the reactive DC magnetron sputtering is a useful method for synthesizing photo-catalysts with unique structure including solid-solid interfaces and surface defects that are associated with enhanced photoreactivity as well as a photoresponse shifted to longer wavelengths of light. I showed that sputter deposition provides excellent control of the phase and interface formation as well as the stoichiometry of the films. I explored the effects exerted by the process parameters of pressure, oxygen partial pressure, target power, substrate bias (RF), deposition incidence angle, and post annealing treatment on the structural and functional characteristics of the catalysts. I have successfully made pure and mixed phase TiO2 films. These films were characterized with UV-Vis, XPS, AFM, SEM, TEM, XRD and EPR, to determine optical properties, elemental stoichiometry, surface morphology, phase distribution and chemical coordination. Bundles of anatase-rutile nano-columns having high densities of dual-scale of interfaces among and within the columns are fabricated. Photocatalytic performance of the sputtered films as measured by the oxidation of the pollutant, acetaldehyde, and the reduction of CO2 for fuel (CH4) production was compared (normalized for surface area) to that of mixed phase TiO2 fabricated by other methods, including flame hydrolysis powders, and solgel deposited TiO 2 films. The sputtered mixed phase materials were far superior to the commercial standard (Degussa P25) and solgel TiO2 based on gas phase reaction of acetaldehyde oxidation under UV light and CO2 reduction under both UV and visible illuminations. The

  18. In situ deposition of PbTiO3 thin films by direct current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Iljinas, Aleksandras; Marcinauskas, Liutauras; Stankus, Vytautas

    2016-09-01

    The lead titanate thin films were deposited using in situ layer-by-layer reactive magnetron sputtering. The synthesis of films was performed on platinized silicon (Pt/Ti/SiO2/Si) substrates at 450-600 °C temperatures using Ti2O seed layer. The influence of the substrate temperature on the surface morphology, phase composition, and electrical properties of PbTiO3 films were investigated. Experimental results demonstrated that the deposition at higher substrate temperatures resulted in the formation of films with the lower surface roughness values. The increase of the substrate temperature has no effect on the tetragonality value of the films. The preferential orientation in the films was changed and the crystallites size slightly increased with the increased substrate temperature from 450 °C to 550 °C. Hysteresis measurements show that the films exhibit ferroelectric properties with a maximum coercive field of Ec = 150 kV/cm and of Pr = 60 μC/cm2. Coercive field dependence on the frequency measurements indicated that the creep regime of domain wall motions dominated till 1 kHz of frequency.

  19. Hollow metal target magnetron sputter type radio frequency ion source.

    PubMed

    Yamada, N; Kasuya, T; Tsubouchi, N; Wada, M

    2014-02-01

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure. PMID:24593636

  20. Hollow metal target magnetron sputter type radio frequency ion source

    SciTech Connect

    Yamada, N. Kasuya, T.; Wada, M.; Tsubouchi, N.

    2014-02-15

    A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu{sup +} has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu{sup +} had occupied more than 85% of the total ion current. Further increase in Cu{sup +} ions in the beam is anticipated by increasing the RF power and Ar pressure.

  1. Development of Dual-Frequency Gyrotron with Triode Magnetron Injection Gun

    NASA Astrophysics Data System (ADS)

    Kajiwara, Ken; Oda, Yasuhisa; Kasugai, Atsushi; Takahashi, Koji; Sakamoto, Keishi

    2011-12-01

    A high power dual-frequency gyrotron is designed and tested. The design is based on a 170 GHz single-frequency gyrotron with a triode magnetron injection gun (MIG). The triode MIG enables to choose variety of oscillation modes for different frequencies with suitable pitch factor, which is the great advantage for a multi-frequency gyrotron. Another frequency of 137 GHz is selected in order to use a 1.853-mm-thick single-disk output window. Cavity modes are TE31,11 and TE25,9 for 170 and 137 GHz, respectively, which have high mode conversion efficiency to the RF beam mode with similar radiation angles. In short-pulse experiments, the maximum power of more than 1.3 MW is achieved with high-efficiency for both frequencies.

  2. SiNx Coatings Deposited by Reactive High Power Impulse Magnetron Sputtering: Process Parameters Influencing the Nitrogen Content.

    PubMed

    Schmidt, Susann; Hänninen, Tuomas; Goyenola, Cecilia; Wissting, Jonas; Jensen, Jens; Hultman, Lars; Goebbels, Nico; Tobler, Markus; Högberg, Hans

    2016-08-10

    Reactive high power impulse magnetron sputtering (rHiPIMS) was used to deposit silicon nitride (SiNx) coatings for biomedical applications. The SiNx growth and plasma characterization were conducted in an industrial coater, using Si targets and N2 as reactive gas. The effects of different N2-to-Ar flow ratios between 0 and 0.3, pulse frequencies, target power settings, and substrate temperatures on the discharge and the N content of SiNx coatings were investigated. Plasma ion mass spectrometry shows high amounts of ionized isotopes during the initial part of the pulse for discharges with low N2-to-Ar flow ratios of <0.16, while signals from ionized molecules rise with the N2-to-Ar flow ratio at the pulse end and during pulse-off times. Langmuir probe measurements show electron temperatures of 2-3 eV for nonreactive discharges and 5.0-6.6 eV for discharges in transition mode. The SiNx coatings were characterized with respect to their composition, chemical bond structure, density, and mechanical properties by X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction, and nanoindentation, respectively. The SiNx deposition processes and coating properties are mainly influenced by the N2-to-Ar flow ratio and thus by the N content in the SiNx films and to a lower extent by the HiPIMS frequencies and power settings as well as substrate temperatures. Increasing N2-to-Ar flow ratios lead to decreasing growth rates, while the N content, coating densities, residual stresses, and the hardness increase. These experimental findings were corroborated by density functional theory calculations of precursor species present during rHiPIMS. PMID:27414283

  3. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering

    SciTech Connect

    Iriarte, G. F.

    2010-03-15

    Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c-axis orientation. This is due to the nonequilibrium conditions existing between the energy of the sputtered particles and the energy at the substrate surface. The application of substrate bias or substrate temperature is known to improve the adatom mobility by delivering energy to the substrate; both are hence well-established crystal growth promoting factors. It is well known that low sputtering pressures can be used as a parameter improving the growth of highly c-axis oriented aluminum nitride films at room temperature even without applying bias voltage to the substrate. Generally, the use of high pressures implies thermalization of particles within the gas phase and is considered to increase the energy gap between these and the substrate surface. However, in later experiments we have learned that the use of high processing pressures does not necessarily implies a detriment of crystallographic orientation in the films. By measuring (for the first time to the author's knowledge) the full width at half maximum value of the rocking curve of the 0002-AlN peak at several positions along the 100 mm diameter (100)-silicon wafers on which aluminum nitride thin films were deposited by reactive sputtering, a new effect was observed. Under certain processing conditions, the growth of the AlN thin films is influenced by the target magnetron. More precisely, their degree of c-axis orientation varies at wafer areas locally coincident under the target magnetron. This effect should be considered, especially where large area substrates are employed such as in silicon wafer foundry manufacturing processes.

  4. Structure and Properties of Ti-O-N Coatings Produced by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Konischev, M. E.; Kuzmin, O. S.; Pustovalova, A. A.; Morozova, N. S.; Evdokimov, K. E.; Surmenev, R. A.; Pichugin, V. F.; Epple, M.

    2014-02-01

    Results of an experimental study of the optical characteristics of gas discharges are presented. The study was aimed at optimizing the operating modes of a mid-frequency magnetron sputtering system to efficiently deposit Ti-O-N coatings. The conditions for maintaining the intensity of the chosen spectroscopic lines that ensure synthesis of titanium oxide and titanium oxynitride coatings have been revealed. The morphology, structure, contact angle, and free surface energy of titanium oxide and titanium oxynitride coatings on type 12Kh18N10T stainless steel substrates were examined by using scanning and transmission electron microscopy and infrared spectroscopy, and by measuring the wetting angle. The results of examination of the structure and properties of the synthesized films and their physicomechanical and optical characteristics are given.

  5. Role of carbon in the formation of hard Ge1-xCx thin films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hu, Chaoquan; Qiao, Liang; Tian, Hongwei; Lu, Xianyi; Jiang, Qing; Zheng, Weitao

    2011-07-01

    We have deposited germanium carbide (Ge1-xCx) films on Si(1 0 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH4/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp3 C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp3 C-Ge bonds in the film gradually reduces, while that of sp3 C-H and graphite-like sp2 C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17

  6. Violet and blue-green luminescence from Ti-doped ZnO films deposited by RF reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Haixia; Ding, Jijun; Ma, Shuyi

    2011-02-01

    Pure and Ti-doped zinc oxide (TZO) films are deposited using radio frequency (RF) reactive magnetron sputtering at different RF powers. Micro-structural and optical properties in doped ZnO films are systematically investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electronic microscopy (SEM), and a fluorescence spectrophotometer. The results indicate that ZnO films show stronger preferred orientation toward the c-axis and smoother surface roughness after Ti doping. As for TZO films, the full width at half maxima (FWHM) of (002) diffraction peaks decreased first and then increased, reaching a minimum of about 0.92° at 150 W, while the residual compressive stress of the TZO film prepared at 150 W became the largest. The photoluminescent (PL) spectra measured at room temperature reveal a violet, a blue and two green emissions. Intense violet and blue-green luminescence is obtained for the sample deposited at higher RF power. The origin of these emissions is discussed.

  7. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  8. Cu/TiO2 thin films prepared by reactive RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sreedhar, M.; Reddy, I. Neelakanta; Bera, Parthasarathi; Ramachandran, D.; Gobi Saravanan, K.; Rabel, Arul Maximus; Anandan, C.; Kuppusami, P.; Brijitta, J.

    2015-08-01

    Cu/TiO2 thin films were deposited on glass substrates by reactive RF magnetron sputtering technique. Crystalline structure, surface morphology and electronic structure were studied using X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy (XPS). Transmittance and absorptance of these films were characterized by UV-Vis spectroscopy. XRD patterns demonstrate that TiO2 films deposited on glass substrate at 300 °C are observed to be in pure anatase phase, whereas Cu/TiO2 films are amorphous in nature at 300 °C substrate temperature. The crystallinity of Cu/TiO2 thin films decreases with increasing the dopant concentrations of Cu in TiO2 films. XPS studies show that Cu is in +2 oxidation state in all films. The optical band gap of Cu/TiO2 films decreases from ~3.3 to ~2.0 eV with the increase in the copper concentration. Further, antimicrobial studies of Cu/TiO2 films with ~3.9 at.% Cu exhibit high transmittance and best antimicrobial activity against E. coli and S. aureus compared to other doped films.

  9. Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

    SciTech Connect

    Reddy, R. Subba; Sreedhar, A.; Uthanna, S.

    2015-08-28

    Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was in the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.

  10. Synthesis of copper nitride films doped with Fe, Co, or Ni by reactive magnetron sputtering

    SciTech Connect

    Yang, Jianbo; Huang, Saijia; Wang, Zhijiao; Hou, Yuxuan; Shi, Yuyu; Zhang, Jian; Yang, Jianping Li, Xing'ao

    2014-09-01

    Copper nitride (Cu{sub 3}N) and Fe-, Co-, and Ni-doped Cu{sub 3}N films were prepared by reactive magnetron sputtering. The films were deposited on silicon substrates at room temperature using pure Cu target and metal chips. The molar ratio of Cu to N atoms in the as-prepared Cu{sub 3}N film was 2.7:1, which is comparable with the stoichiometry ratio 3:1. X-ray diffraction measurements showed that the films were composed of Cu{sub 3}N crystallites with anti-ReO{sub 3} structure and adopted different preferred orientations. The reflectance of the four samples decreased in the wavelength range of 400–830 nm, but increased rapidly within wavelength range of 830–1200 nm. Compared with the Cu{sub 3}N films, the resistivity of the doped Cu{sub 3}N films decreased by three orders of magnitude. These changes have great application potential in optical and electrical devices based on Cu{sub 3}N films.

  11. Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides

    SciTech Connect

    Welzel, Thomas; Ellmer, Klaus

    2012-11-15

    Reactive d.c. magnetron sputtering in Ar/O{sub 2} gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O{sup -}, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O{sup -}, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O{sup -} formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

  12. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  13. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-01

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10-4 Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  14. Mechanical and Tribological Behavior of VN and HfN Films Deposited via Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Escobar, C.; Villarreal, M.; Caicedo, J. C.; Esteve, J.; Prieto, P.

    2013-08-01

    HfN and VN thin films were deposited onto silicon and 4140 steel substrates with r.f. reactive magnetron sputtering by using Hf and V metallic targets with 4-inch diameter and 99.9% purity in argon/nitrogen atmosphere, applying a substrate temperature of 250°C and a pressure of 1.2 × 10-3 mbar. In order to evaluate the structural, chemical, morphological, mechanical and tribological properties, we used X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX), atomic force microscopy (AFM), scanning electron microscopy (SEM), nanoindentation, pin-on-disc and scratch tests. Film structure determined by XRD showed that FCC (NaCl-type) films are formed in both the cases by δ-HfN and δ-VN phases. Hardness and elastic modulus values obtained for both the films were 21 and 224 GPa for the HfN film and 19 and 205 GPa for the VN film, respectively. Additionally, the films showed low friction coefficient of 0.44 for HfN and 0.62 for VN when these films were evaluated against 100 Cr6 steel, and finally the critical load was found at 41 N for the HfN film and 34 N for the VN film.

  15. Structure, mechanical and tribological properties of HfCx films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shuo, Wang; Kan, Zhang; Tao, An; Chaoquan, Hu; Qingnan, Meng; Yuanzhi, Ma; Mao, Wen; Weitao, Zheng

    2015-02-01

    Hafnium carbide (HfC) films have been deposited on Si (1 0 0) substrates by direct current reactive magnetron sputtering. The microstructure, compressive stress, hardness and tribological behaviors show great dependence on carbon (C) concentration and chemical bonding state. With C content in HfCx films rising, phase transforms from hexagonal-close-packed (HCP) Hf(C) to face-centered-cubic (FCC) HfC, and nanocomposite structure consisting of HfCx nanocrystalline grains encapsulated by amorphous carbon (a-C) matrix forms at moderate C content. The hardness of HfCx films increases significantly from 10.4 GPa (14 at.% C) to 34.4 GPa (58 at.% C) and then keeps dropping with further increasing C content. a-C appears in HfCx films with more than 32 at.% C and it obviously lowers coefficient of friction (COF). The wear resistance can be remarkably worsened by high compressive stress. The film with 76 at.% C exhibits relatively high hardness and low compressive stress, good fracture toughness and self-lubrication transfer layer, showing great combination of the lowest COF of 0.10 and lowest wear rate of 1.10 × 10-6 mm3/Nm.

  16. Nanocharacterization of Titanium Nitride Thin Films Obtained by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Merie, Violeta Valentina; Pustan, Marius Sorin; Bîrleanu, Corina; Negrea, Gavril

    2015-05-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants, etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-micro-electromechanical systems, and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by the reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, when the substrates were at room temperature, and second, when the substrates were previously heated at 250°C. The temperature of 250°C was kept constant during the deposition of the films. The samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, Young's modulus, roughness, and friction force were some of the determined characteristics. The results demonstrated that the substrate which was previously heated at 250°C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature. The preheating of both substrates determined the decrease of thin films roughness. The friction force, nanohardness and Young's modulus of the tested samples increased when the substrates were preheated at 250°C.

  17. Nanocharacterization of titanium nitride thin films obtained by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Pustan, M. S.; Bîrleanu, C.; Negrea, G.

    2014-08-01

    Titanium nitride thin films are used in applications such as tribological layers for cutting tools, coating of some medical devices (scalpel blades, prosthesis, implants etc.), sensors, electrodes for bioelectronics, microelectronics, diffusion barrier, bio-microelectromechanical systems (Bio-MEMS) and so on. This work is a comparative study concerning the influence of substrate temperature on some mechanical and tribological characteristics of titanium nitride thin films. The researched thin films were obtained by reactive magnetron sputtering method. The experiments employed two kinds of substrates: a steel substrate and a silicon one. The elaboration of titanium nitride thin films was done at two temperatures. First, the obtaining was realized when the substrates were at room temperature, and second, the obtaining was realized when the substrates were previously heated at 250 °C. The elaborated samples were then investigated by atomic force microscopy in order to establish their mechanical and tribological properties. The nanohardness, roughness, friction force are some of the determined characteristics. The results marked out that the substrate which was previously heated at 250 °C led to the obtaining of more adherent titanium nitride thin films than the substrate used at room temperature.

  18. Structural, optical and electrical properties of WOxNy filmsdeposited by reactive dual magnetron sputtering

    SciTech Connect

    Mohamed, Sodky H.; Anders, Andre

    2006-06-05

    Thin films of tungsten oxynitride were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios. The presence of even small amounts of oxygen had a great effect not only on the composition but on the structure of WOxNy films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89 percent of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high.The deposition rate increased from 0.31 to 0.89 nm/s, the room temperature resistivity decreased from 1.65 x 108 to 1.82 x 10-2 ?cm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WOxNy films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

  19. Control of ions energy distribution in dual-frequency magnetron sputtering discharges

    SciTech Connect

    Ye, Chao He, Haijie; Huang, Fupei; Liu, Yi; Wang, Xiangying

    2014-04-15

    The ion energy distributions (IEDs) in the dual-frequency magnetron sputtering discharges were investigated by retarding field energy analyzer. Increasing power ratio of 2 MHz to 13.56 (27.12 or 60) MHz led to the evolution of IEDs from a uni-modal distribution towards a uni-modal distribution with high-energy peak shoulder and a bi-modal distribution. While increasing power ratio of 13.56 MHz to 27.12 MHz and 27.12 MHz to 60 MHz, led to the increase of peak energy. The evolution of IEDs shape and the increase of peak energy are due to the change of ions responding to the average field of high-frequency period towards the instantaneous sheath potential of low-frequency period.

  20. A Complementary Type of Electrochromic Device by Radio Frequency Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change their optical properties reversibly in the visible region (400-800 nm) upon charge insertion/extraction reactions according to the applied voltage. A complementary type of EC device composes of two electrochromic layers, which is separated by an ionic conduction layer (electrolyte). In this work, the EC device was fabricated using vanadium oxide (V2O5) and titanium doped tungsten oxide (WO3-TiO2) electrodes. The EC electrodes were deposited as thin film structures by a reactive RF magnetron sputtering system in a medium of gas mixture of argon and oxygen. surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical property and durability of the EC device was investigated by a potentiostat system. Optical measurement was examined under applied voltages of +/- 2.5 V by a computer-controlled system, constantly.

  1. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    SciTech Connect

    Krylov, P. N. Zakirova, R. M.; Fedotova, I. V.

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  2. Bioactivity response of Ta1-xOx coatings deposited by reactive DC magnetron sputtering.

    PubMed

    Almeida Alves, C F; Cavaleiro, A; Carvalho, S

    2016-01-01

    The use of dental implants is sometimes accompanied by failure due to periimplantitis disease and subsequently poor esthetics when soft-hard tissue margin recedes. As a consequence, further research is needed for developing new bioactive surfaces able to enhance the osseous growth. Tantalum (Ta) is a promising material for dental implants since, comparing with titanium (Ti), it is bioactive and has an interesting chemistry which promotes the osseointegration. Another promising approach for implantology is the development of implants with oxidized surfaces since bone progenitor cells interact with the oxide layer forming a diffusion zone due to its ability to bind with calcium which promotes a stronger bond. In the present report Ta-based coatings were deposited by reactive DC magnetron sputtering onto Ti CP substrates in an Ar+O2 atmosphere. In order to assess the osteoconductive response of the studied materials, contact angle and in vitro tests of the samples immersed in Simulated Body Fluid (SBF) were performed. Structural results showed that oxide phases where achieved with larger amounts of oxygen (70 at.% O). More compact and smooth coatings were deposited by increasing the oxygen content. The as-deposited Ta coating presented the most hydrophobic character (100°); with increasing oxygen amount contact angles progressively diminished, down to the lowest measured value, 63°. The higher wettability is also accompanied by an increase on the surface energy. Bioactivity tests demonstrated that highest O-content coating, in good agreement with wettability and surface energy values, showed an increased affinity for apatite adhesion, with higher Ca/P ratio formation, when compared to the bare Ti substrates. PMID:26478293

  3. Deposition and properties of yttria-stabilized zirconia thin films using reactive direct current magnetron sputtering

    SciTech Connect

    Thiele, E.S.; Wang, L.S.; Mason, T.O.; Barnett, S.A. . Dept. of Materials Science Northwestern Univ., Evanston, IL . Materials Research Center)

    1991-11-01

    Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputter deposition from a composite Zr--Y target in Ar--O{sub 2} mixtures. Hysteresis was observed as a function of oxygen flow rate {ital f}. For a discharge current of 0.4 A and a total pressure {ital P} of 5 mTorr, for example, the target oxidized at {ital f}{gt}2.3 ml/min, with the reverse transition from an oxidized to a metallic target surface occurring at 1.95 ml/min. The deposition rate was 2.7 {mu}m/h in the metallic mode and 0.1 {mu}m/h in the oxide mode. Fully oxidized (Y{sub 2}O{sub 3}){sub 0.1}(ZrO{sub 2}){sub 0.9} was obtained for {ital f}{gt}2.0 ml/min, even in the metallic mode. While films deposited with {ital P}=3--20 mTorr were continuous, for {ital P}{gt}20 mTorr crazing was apparent as expected for a ceramic film in a tensile stress state. For {ital P}{lt}3 mTorr, the films delaminated due to excessive compressive stress. X-ray diffraction and electron microscopy results showed that the films were polycrystalline cubic YSZ with a columnar structure and an average grain diameter of 15 nm. Fully dense films were obtained at a deposition temperature of 350 {degree}C. Temperature-dependent impedance spectroscopy analysis of YSZ films with Ag electrodes showed that the oxygen ion conductivity was as expected for YSZ.

  4. Studies on optoelectronic properties of DC reactive magnetron sputtered CdTe thin films

    SciTech Connect

    Kumar, B. Rajesh; Hymavathi, B.; Rao, T. Subba

    2014-01-28

    Cadmium telluride continues to be a leading candidate for the development of cost effective photovoltaics for terrestrial applications. In the present work two individual metallic targets of Cd and Te were used for the deposition of CdTe thin films on mica substrates from room temperature to 300 °C by DC reactive magnetron sputtering method. XRD patterns of CdTe thin films deposited on mica substrates exhibit peaks at 2θ = 27.7°, 46.1° and 54.6°, which corresponds to reflection on (1 1 1), (2 2 0) and (3 1 1) planes of CdTe cubic structure. The intensities of XRD patterns increases with the increase of substrate temperature upto 150 °C and then it decreases at higher substrate temperatures. The conductivity of CdTe thin films measured from four probe method increases with the increase of substrate temperature. The activation energies (ΔE) are found to be decrease with the increase of substrate temperature. The optical transmittance spectra of CdTe thin films deposited on mica have a clear interference pattern in the longer wavelength region. The films have good transparency (T > 85 %) exhibiting interference pattern in the spectral region between 1200 – 2500 nm. The optical band gap of CdTe thin films are found to be in the range of 1.48 – 1.57. The refractive index, n decreases with the increase of wavelength, λ. The value of n and k increases with the increase of substrate temperature.

  5. Magnetic field strength influence on the reactive magnetron sputter deposition of Ta2O5

    NASA Astrophysics Data System (ADS)

    Hollerweger, R.; Holec, D.; Paulitsch, J.; Rachbauer, R.; Polcik, P.; Mayrhofer, P. H.

    2013-08-01

    Reactive magnetron sputtering enables the deposition of various thin films to be used for protective as well as optical and electronic applications. However, progressing target erosion during sputtering results in increased magnetic field strengths at the target surface. Consequently, the glow discharge, the target poisoning, and hence the morphology, crystal structure and stoichiometry of the prepared thin films are influenced. Therefore, these effects were investigated by varying the cathode current Im between 0.50 and 1.00 A, the magnetic field strength B between 45 and 90 mT, and the O2/(Ar + O2) flow rate ratio Γ between 0% and 100%. With increasing oxygen flow ratio a substoichiometric TaOx oxide forms at the metallic Ta target surface which further transfers to a non-conductive tantalum pentoxide Ta2O5, impeding a stable dc glow discharge. These two transition zones (from Ta to TaOx and from TaOx to Ta2O5) shift to higher oxygen flow rates for increasing target currents. In contrast, increasing the magnetic field strength (e.g., due to sputter erosion) mainly shifts the TaOx to Ta2O5 transition to lower oxygen flow rates while marginally influencing the Ta to TaOx transition. To allow for a stable dc glow discharge (and to suppress the formation of non-conductive Ta2O5 at the target) even at Γ = 100% either a high target current (Im ⩾ 1 A) or a low magnetic field strength (B ⩽ 60 mT) is necessary. These conditions are required to prepare stoichiometric and fully crystalline Ta2O5 films.

  6. A parametric model for reactive high-power impulse magnetron sputtering of films

    NASA Astrophysics Data System (ADS)

    Kozák, Tomáš; Vlček, Jaroslav

    2016-02-01

    We present a time-dependent parametric model for reactive HiPIMS deposition of films. Specific features of HiPIMS discharges and a possible increase in the density of the reactive gas in front of the reactive gas inlets placed between the target and the substrate are considered in the model. The model makes it possible to calculate the compound fractions in two target layers and in one substrate layer, and the deposition rate of films at fixed partial pressures of the reactive and inert gas. A simplified relation for the deposition rate of films prepared using a reactive HiPIMS is presented. We used the model to simulate controlled reactive HiPIMS depositions of stoichiometric \\text{Zr}{{\\text{O}}2} films, which were recently carried out in our laboratories with two different configurations of the {{\\text{O}}2} inlets in front of the sputtered target. The repetition frequency was 500 Hz at the deposition-averaged target power densities of 5 Wcm-2and 50 Wcm-2 with a pulse-averaged target power density up to 2 kWcm-2. The pulse durations were 50 μs and 200 μs. Our model calculations show that the to-substrate {{\\text{O}}2} inlet provides systematically lower compound fractions in the target surface layer and higher compound fractions in the substrate surface layer, compared with the to-target {{\\text{O}}2} inlet. The low compound fractions in the target surface layer (being approximately 10% at the deposition-averaged target power density of 50 Wcm-2 and the pulse duration of 200 μs) result in high deposition rates of the films produced, which are in agreement with experimental values.

  7. Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

    SciTech Connect

    Högberg, Hans Tengdelius, Lina; Eriksson, Fredrik; Broitman, Esteban; Lu, Jun; Jensen, Jens; Hultman, Lars; Samuelsson, Mattias

    2014-07-01

    Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{sub 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.

  8. Deposition of a conductive near-infrared cutoff filter by radio-frequency magnetron sputtering.

    PubMed

    Lee, Jang-Hoon; Lee, Seung-Hyu; Yoo, Kwang-Lim; Kim, Nam-Young; Hwangbo, Chang Kwon

    2002-06-01

    We have designed a conductive near-infrared (NIR) cutoff filter for display application, i.e., a modified low-emissivity filter based on the three periods of the basic design of [TiO2[Ti]Ag] TiO2] upon a glass substrate and investigated the optical, structural, chemical, and electrical properties of the conductive NIR cutoff filter prepared by a radio frequency magnetron sputtering system. The results show that the average transmittance is 61.1% in the visible, that the transmittance in the NIR is less than 6.6%, and that the sheet resistance and emissivity are 0.9 ohms/square (where square stands for a square film) and 0.012, respectively, suggesting that the conductive NIR cutoff filter can be employed as a shield against the hazard of electromagnetic waves as well as to cut off the NIR. PMID:12064381

  9. Nanoporous Ti-metal film deposition using radio frequency magnetron sputtering technique for photovoltaic application.

    PubMed

    Sung, Youl-Moon; Paeng, Sung-Hwan; Moon, Byung-Ho; Kwak, Dong-Joo

    2012-02-01

    Nanoporous Ti-metal film electrode was fabricated by radio frequency (rf) magnetron sputtering technique on nanoporous TiO2 layer prepared by sol-gel combustion method and investigated with respect to its photo-anode properties of TCO-less DSCs. The porous Ti layer (approximately 1 microm) with low sheet resistance (approximately 17 Omega/sq.) can collect electrons from the TiO2 layer and allows the ionic diffusion of I(-)/I(3-) through the hole. The porous Ti layer with highly ordered columnar structure prepared by 8 mTorr sputtering shows the good impedance characteristics. The efficiency of prepared TCO-less DSCs sample is about 4.83% (ff: 0.6, Voc: 0.65 V, Jsc: 11.2 mA/cm2). PMID:22629960

  10. Hydroxyapatite coatings on nanotubular titanium dioxide thin films prepared by radio frequency magnetron sputtering.

    PubMed

    Shin, Jinho; Lee, Kwangmin; Koh, Jeongtae; Son, Hyeju; Kim, Hyunseung; Lim, Hyun-Pil; Yun, Kwidug; Oh, Gyejeong; Lee, Seokwoo; Oh, Heekyun; Lee, Kyungku; Hwang, Gabwoon; Park, Sang-Won

    2013-08-01

    In this study, hydroxyapatite (HA) was coated on anodized titanium (Ti) surfaces through radio frequency magnetron sputtering in order to improve biological response of the titanium surface. All the samples were blasted with resorbable blasting media (RBM). RBM-blasted Ti surface, anodized Ti surface, as-sputtered HA coating on the anodized Ti surface, and heat-treated HA coating on the anodized Ti surface were prepared. The samples were characterized using scanning electron microscopy and X-ray photoemission spectroscopy, and biologic responses were evaluated. The top of the TiO2 nanotubes was not closed by HA particles when the coating time is less than 15 minutes. It was demonstrated that the heat-treated HA was well-crystallized and this enhanced the cell attachment of the anodized Ti surface. PMID:23882839

  11. Microstructure and properties of SiC-coated carbon fibers prepared by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jianrong; Zhou, Shan; Wei, Yongshan

    2016-04-01

    SiC-coated carbon fibers are prepared at room temperature with different radio-frequency magnetron sputtering powers. Results show that the coated carbon fibers have uniform, continuous, and flawless surfaces. The mean strengths of the coated carbon fibers with different sputtering powers are not influenced by other factors. Filament strength of SiC-coated carbon fibers increases by approximately 2% compared with that of uncoated carbon fibers at a sputtering power of <200 W. The filament strengths of the coated fibers increase by 9.3% and 12% at sputtering powers of 250 and 300 W, respectively. However, the mean strength of the SiC-coated carbon fibers decreased by 8% at a sputtering power of 400 W.

  12. Preparation and structural properties of thin carbon films by very-high-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ming-Wei, Gao; Chao, Ye; Xiang-Ying, Wang; Yi-Song, He; Jia-Min, Guo; Pei-Fang, Yang

    2016-07-01

    Growth and structural properties of thin a-C films prepared by the 60 MHz very-high-frequency (VHF) magnetron sputtering were investigated. The energy and flux of ions impinging the substrate were also analyzed. It is found that the thin a-C films prepared by the 60 MHz sputtering have a lower growth rate, a smooth surface, and more sp3 contents. These features are related to the higher ion energy and the lower ions flux onto the substrate. Therefore, the 60 MHz VHF sputtering is more suitable for the preparation of thin a-C film with more sp3 contents. Project supported by the National Natural Science Foundation of China (Grant No. 11275136).

  13. Cleaning of HT-7 Tokamak Exposed First Mirrors by Radio Frequency Magnetron Sputtering Plasma

    NASA Astrophysics Data System (ADS)

    Yan, Rong; Chen, Junling; Chen, Longwei; Ding, Rui; Zhu, Dahuan

    2014-12-01

    The stainless steel (SS) first mirror pre-exposed in the deposition-dominated environment of the HT-7 tokamak was cleaned in the newly built radio frequency (RF) magnetron sputtering plasma device. The deposition layer on the FM surface formed during the exposure was successfully removed by argon plasma with a RF power of about 80 W and a gas pressure of 0.087 Pa for 30 min. The total reflectivity of the mirrors was recovered up to 90% in the wavelength range of 300-800 nm, while the diffuse reflectivity showed a little increase, which was attributed to the increase of surface roughness in sputtering, and residual contaminants. The FMs made from single crystal materials could help to achieve a desired recovery of specular reflectivity in the future.

  14. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction.

    PubMed

    Bürgi, J; Neuenschwander, R; Kellermann, G; García Molleja, J; Craievich, A F; Feugeas, J

    2013-01-01

    The purpose of the designed reactor is (i) to obtain polycrystalline and∕or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, fixed α-2θ scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer. PMID:23387690

  15. Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction

    SciTech Connect

    Buergi, J.; Molleja, J. Garcia; Feugeas, J.; Neuenschwander, R.; Kellermann, G.; Craievich, A. F.

    2013-01-15

    The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study of the deposited thin films by X-ray diffraction, in real time, during the whole growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, {theta}-2{theta} scanning, fixed {alpha}-2{theta} scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and X-ray reflectivity. The chamber was mounted on a standard four-circle diffractometer located in a synchrotron beam line and first used for a preliminary X-ray diffraction analysis of AlN thin films during their growth on the surface of a (100) silicon wafer.

  16. Magnetron discharge sputtering for fabrication of nanogradient optical coatings

    NASA Astrophysics Data System (ADS)

    Volpian, O. D.; Kuzmichev, A. I.; Ermakov, G. F.; Krikunov, A. I.; Obod, Yu A.; Silin, N. V.; Shkatula, S. V.

    2015-11-01

    The technology of the middle frequency pulse reactive magnetron sputtering for fabrication of nanogradient optical coatings with smooth variation of refractive index was developed and studied. The technology is based on programmable motion of a substrate over two magnetrons with targets of different materials. The feature of the deposition process is a constant composition of reactive gas medium and an invariable magnetron operation mode. To realize this technology, an automatic computer-controlled sputtering system additionally comprising a gas discharge activator of reactive gas (oxygen) and an in situ optical monitor- spectrovisor has been built. The dielectric oxide-based nanogradient coatings of photon-barrier type were successfully fabricated. The obtained results confirm the high potential of the middle frequency pulse reactive magnetron sputtering of silicon and metal targets for fabrication of nanogradient dielectric optical coatings with excellent properties.

  17. Preparation of cubic boron nitride films by radio frequency magnetron sputtering and radio frequency ion plating

    NASA Astrophysics Data System (ADS)

    Ulrich, S.; Scherer, J.; Schwan, J.; Barzen, I.; Jung, K.; Scheib, M.; Ehrhardt, H.

    1996-02-01

    Cubic boron nitride (c-BN) thin films have been deposited by unbalanced rf (13.56 MHz) magnetron sputtering of a hexagonal boron nitride target in a pure argon discharge. Deposition parameters have been 300 W rf target power, 8×10-4 mbar argon pressure, 3.5 cm target substrate distance, and 800 K substrate temperature. Under these conditions the ion current density is 2.25 mA/cm2 and the growth rate is ˜1.1 Å/s. By applying a rf substrate bias the ion plating energy is varied from plasma potential of 37 eV up to 127 eV. The films have been characterized by infrared (IR) and Auger electron spectroscopy (AES), x-ray diffraction (XRD), x-ray reflectivity, elastic recoil detection (ERD), Rutherford backscattering (RBS), nuclear resonance analysis (NRA), and stress measurements. The subplantation model proposed by Lifshitz and Robertson can be applied to the c-BN formation. An energy of about 85±5 eV is found where the stress (25 GPa, 200 nm film thickness) and the c-BN content (≳90%) have a maximum. The grain size of the crystalline c-BN phase was estimated to be in the range of 5 nm. Below an energy of 67±5 eV no c-BN could be detected. An excellent adhesion has been obtained by a special interface treatment.

  18. Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ju, Hongbo; Xu, Junhua

    2015-11-01

    Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al2O3 depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2-13.5 at.%, which showed low average friction coefficient values of 0.46-0.40 and wear rate values of 1.1 × 10-8 to 1.7 × 10-8 mm3/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO3 detected on the surface of the wear tracks could lead to the friction coefficient curve stay constant and decrease the average friction coefficients. The decrease of wear rate was mainly attributed to the lubricant tribo-film AgNbO3 as Ag content increased from 4.0 to 9.2 at.%; with a further increase in Ag content, the wear rate increased with increasing Ag content in NbN-Ag films because a

  19. Phase map, composition and resistivity of reactively magnetron sputtered and annealed Ta–N films

    NASA Astrophysics Data System (ADS)

    Salamon, K.; Radić, N.; Bogdanović Radović, I.; Očko, M.

    2016-05-01

    Thin films of tantalum nitride (Ta–N) have been prepared by reactive magnetron deposition under various nitrogen partial pressures p{{\\text{N}}2} (0-1) and subsequently annealed (T a   =  450–950 °C). The structure, density, composition and electrical resistivity of the prepared films were systematically investigated. A p{{\\text{N}}2}-{{T}a} phase map was constructed from the results of structural analysis. With increasing of p{{\\text{N}}2} from 0 to 0.2, a single-phase or two-phase mixture films of tetragonal Ta, Ta2N ({{T}a}≥slant 450 °C), ɛ-TaN ({{T}a}≥slant 850 °C), θ-TaN ({{T}a}≥slant 850 °C) and fcc δ-TaN are sequentially observed. For p{{\\text{N}}2}=0.25 –0.45, the as grown and annealed films exhibit δ-TaN structure. Amorphous films grown in the p{{\\text{N}}2}=0.45 –0.75 range crystallize as cubic Ta2N3 upon annealing at {{T}a}≥slant 650 °C or as δ-TaN at {{T}a}≥slant 850 °C. A cubic Ta2N3 is grown at highest p{{\\text{N}}2} (≥slant 0.85), which decomposes to δ-TaN at {{T}a}≥slant 850 °C. The N     / Ta atomic ratio in the film linearly increases for p{{\\text{N}}2}=0 –0.5, ranging from 0 to 2.1, while the mass density monotonically decreases with p{{\\text{N}}2} . Upon annealing, a part of N atoms out-diffuses from the films deposited at p{{\\text{N}}2}≥slant 0.3 . The electrical resistivity strongly depends on both p{{\\text{N}}2} and T a . However, in the as grown and annealed δ-TaN films the resistivity was of the order of 100–1000 μ Ω cm. In these films, a correlation between the resistivity and the average number of defects (Ta vacancies and N atom excess) is observed. Finally, the influence of thermally introduced oxygen on the films resistivity has been revealed.

  20. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Oezer, D.; Sanjines, R.; Ramirez, G.; Rodil, S. E.

    2012-12-01

    The electrical and optical properties of Ta{sub x}Si{sub y}N{sub z} thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-Ta{sub x}Si{sub y}N{sub z} thin films were prepared: sub-stoichiometric Ta{sub x}Si{sub y}N{sub 0.44}, nearly stoichiometric Ta{sub x}Si{sub y}N{sub 0.5}, and over-stoichiometric Ta{sub x}Si{sub y}N{sub 0.56}. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the Ta{sub x}Si{sub y}N{sub z} films due to variations in the stoichiometry of the fcc-TaN{sub z} system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-Ta{sub x}Si{sub y}N{sub z} films can exhibit room temperature resistivity values ranging from 10{sup 2} {mu}{Omega} cm to about 6 Multiplication-Sign 10{sup 4} {mu}{Omega} cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the Ta{sub x}Si{sub y}N{sub z} thin films provides a pertinent and

  1. Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

    SciTech Connect

    Mei, A. B.; Zhang, C.; Sardela, M.; Eckstein, J. N.; Rockett, A.; Howe, B. M.; Hultman, L.; Petrov, I.; Greene, J. E.

    2013-11-15

    Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 °C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001){sub ZrN}‖(001){sub MgO} and [100]{sub ZrN}‖[100]{sub MgO}. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity ρ{sub 300K} of 12.0 μΩ-cm, a temperature coefficient of resistivity between 100 and 300 K of 5.6 × 10{sup −8}Ω-cm K{sup −1}, a residual resistivity ρ{sub o} below 30 K of 0.78 μΩ-cm (corresponding to a residual resistivity ratio ρ{sub 300Κ}/ρ{sub 15K} = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, ξ{sub ‖} = 18 nm and ξ{sub ⊥} = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 ± 1.7 and 450 ± 25 GPa.

  2. Electrical and optical properties of Ta-Si-N thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Oezer, D.; Ramírez, G.; Rodil, S. E.; Sanjinés, R.

    2012-12-01

    The electrical and optical properties of TaxSiyNz thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correlation to the film microstructure. Three sets of fcc-TaxSiyNz thin films were prepared: sub-stoichiometric TaxSiyN0.44, nearly stoichiometric TaxSiyN0.5, and over-stoichiometric TaxSiyN0.56. The optical properties were investigated by near-normal-incidence reflectivity and ellipsometric measurements in the optical energy range from 0.375 eV to 6.8 eV, while the d.c. electrical resistivity was measured in the van der Pauw configuration from 20 K to 300 K. The optical and electrical measurements were interpreted using the standard Drude-Lorentz model and the so-called grain boundary scattering model, respectively. The electronic properties were closely correlated with the compositional and structural modifications of the TaxSiyNz films due to variations in the stoichiometry of the fcc-TaNz system and the addition of Si atoms. According to the nitrogen and silicon contents, fcc-TaxSiyNz films can exhibit room temperature resistivity values ranging from 102 μΩ cm to about 6 × 104 μΩ cm. The interpretation of the experimental temperature-dependent resistivity data within the Grain Boundary Scattering model, combined with the results from optical investigations, showed that the mean electron transmission probability G and the free carriers concentration, N, are the main parameters that control the transport properties of these films. The results indicated that the correlation between electrical and optical measurements with the chemical composition and the nanostructure of the TaxSiyNz thin films provides a pertinent and consistent description of the evolution of the Ta-Si-N system from a solid solution to a nanocomposite material due to the addition of Si atoms.

  3. Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

    SciTech Connect

    Jagannadham, Kasichainula

    2015-05-15

    Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr{sub 2}N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W{sub 2}N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W{sub 2}N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films.

  4. Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

    NASA Astrophysics Data System (ADS)

    Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

    2016-02-01

    Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

  5. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    NASA Astrophysics Data System (ADS)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; J. Amjad, R.

    2013-09-01

    Structural and optical properties of ~ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 1011 cm-2)). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (~0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics.

  6. Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jiang, Jinlong; Wang, Yubao; Du, Jinfang; Yang, Hua; Hao, Junying

    2016-08-01

    The silicon doped hydrogenated amorphous carbon (a-C:H:Si) films were prepared on silicon substrates by middle-frequency magnetron sputtering silicon target in an argon and methane gas mixture atmosphere. The deposition rate, chemical composition, structure, surface properties, stress, hardness and tribological properties in the ambient air of the films were systemically investigated using X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), atomic force microscopy (AFM), nanoindentation and tribological tester. The results show that doped silicon content in the films is controlled in the wide range from 39.7 at.% to 0.2 at.% by various methane gas flow rate, and methane flow rate affects not only the silicon content but also its chemical bonding structure in the films due to the transformation of sputtering modes. Meanwhile, the sp3 carbon component in the films linearly increases with increasing of methane flow rate. The film deposited at moderate methane flow rate of 40-60 sccm exhibits the very smooth surface (RMS roughness 0.4 nm), low stress (0.42 GPa), high hardness (21.1 GPa), as well as low friction coefficient (0.038) and wear rate (1.6 × 10-7 mm3/Nm). The superior tribological performance of the films could be attributed to the formation and integral covering of the transfer materials on the sliding surface and their high hardness.

  7. Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.; Ndione, Paul F.; Perkins, John D.; Gennett, Thomas; van Hest, Maikel F. A. M.; Shaheen, Sean E.; Ginley, David S.; Berry, Joseph J.

    2012-05-01

    The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga2O3 (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 ± 200 S/cm, 3920 ± 600 S/cm, and 3610 ± 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in χ and broadening of optical gap with increased carrier concentration via more efficient doping. Independent of the total sputtering power, all films grown with 50% or higher RF power portion resulted in high mobility (˜28 ± 1 cm2/Vs), consistent with observed improvements in crystallographic texture. All films showed optical transmittance of ˜90% in the visible range.

  8. BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Gong, Haibo; Freudenberg, Norman; Nie, Man; van de Krol, Roel; Ellmer, Klaus

    2016-04-01

    Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

  9. () preferential orientation of polycrystalline AlN grown on SiO2/Si wafers by reactive sputter magnetron technique

    NASA Astrophysics Data System (ADS)

    Bürgi, Juan; García Molleja, Javier; Bolmaro, Raúl; Piccoli, Mattia; Bemporad, Edoardo; Craievich, Aldo; Feugeas, Jorge

    2016-04-01

    Aluminum nitride (AlN) is a ceramic compound that could be used as a processing material for semiconductor industry. However, the AlN crystalline structure plays a crucial role in its performance. In this paper, polycrystalline AlN films have been grown onto Si(1 1 1) and Si(1 0 0) (with an oxide native coverage of SiO2) wafers by RSM (reactive sputter magnetron) technique using a small (5 L) reactor. The development of polycrystalline AlN films with a good texture along () planes, i.e., semi-polar structure, was shown. Analyses were done using X-ray diffraction in the Bragg-Brentano mode and in the GIXRD (grazing incidence X-ray diffraction) one, and the texture was determined through pole figures. The structure and composition of these films were also studied by TEM and EDS techniques. Nevertheless, the mapping of the magnetic field between the magnetron and the substrate has shown a lack of symmetry at the region near the substrate. This lack of symmetry can be attributable to the small dimensions of the chamber, and the present paper suggests that this phenomenon is the responsible for the unusual () texture developed.

  10. Preparation of hydrogenated diamond-like carbon films by reactive Ar/CH4 high power impulse magnetron sputtering with negative pulse voltage

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2015-09-01

    High power impulse magnetron sputtering (HiPIMS) has been attracted, because sputtered target species are highly ionized. High densities of active species such as radical ions and neutral radicals can be also achieved owing to high density reactive HiPIMS plasmas. We investigate properties of hydrogenated diamond-like carbon films prepared by reactive HiPIMS of Ar/CH4 gas mixture. The properties of the films strongly depend on the plasma compositions and the kinetic energy of the carbon-containing ions which can enter into the films. The film preparation is performed at an average power of 60 W and a repetition frequency of 110 Hz, changing CH4 fraction up to 15%. Total pressure ranges between 0.3 and 2 Pa. The maximum of instantaneous power is about 20-25 kW, and the magnitude of the current is 36 A. A negative pulse voltage is applied to the substrates for about 10 μs after the target voltage changed from about -600 V to 0 V. The structural properties are characterized by Raman spectroscopy and nano-indentation method. Film hardness strongly depends on the magnitude of negative pulse voltage. By adjusting the magnitude of negative voltage, the film hardness ranges between about 10 and 22 GPa. This work is partially supported by JSPS KAKENHI Grant Number 26420230.

  11. Reactive magnetron sputtering of Cu{sub 2}O: Dependence on oxygen pressure and interface formation with indium tin oxide

    SciTech Connect

    Deuermeier, Jonas; Gassmann, Juergen; Broetz, Joachim; Klein, Andreas

    2011-06-01

    Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu{sub 2}O) are identified. In addition, the interface formation between Cu{sub 2}O and Sn-doped In{sub 2}O{sub 3} (ITO) was studied by stepwise deposition of Cu{sub 2}O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset {Delta}E{sub VB} 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu{sub 2}O/n-ITO junctions, which have been investigated for thin film solar cells.

  12. Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

    SciTech Connect

    Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

    2012-06-25

    Thin films of VO{sub x} (1.3 {<=} x {<=} 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VO{sub x} samples. The resistivity of nanotwinned VO{sub x} films ranged from 4 m{Omega}{center_dot}cm to 0.6 {Omega}{center_dot}cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VO{sub x} samples using the Hooge-Vandamme relation. These VO{sub x} films are comparable or surpass commercial VO{sub x} films deposited by ion beam sputtering.

  13. Bimodal substrate biasing to control γ-Al{sub 2}O{sub 3} deposition during reactive magnetron sputtering

    SciTech Connect

    Prenzel, Marina; Kortmann, Annika; Stein, Adrian; Keudell, Achim von; Nahif, Farwah; Schneider, Jochen M.

    2013-09-21

    Al{sub 2}O{sub 3} thin films have been deposited at substrate temperatures between 500 °C and 600 °C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films were characterized by X-ray diffraction and Fourier transform infrared spectroscopy. The film structure being amorphous, nanocrystalline, or crystalline was correlated with characteristic ion energy distributions. The evolving crystalline structure is connected with different levels of displacements per atom (dpa) in the growing film as being derived from TRIM simulations. The boundary between the formation of crystalline films and amorphous or nanocrystalline films was at 0.8 dpa for a substrate temperature of 500 °C. This threshold shifts to 0.6 dpa for films grown at 550 °C.

  14. Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

    SciTech Connect

    Valcheva, E.; Birch, J.; Persson, P. O. A ring .; Tungasmita, S.; Hultman, L.

    2006-12-15

    Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)(parallel sign)Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15 deg. with respect to each other: AlN<1120>(parallel sign)Si[110], AlN<0110>(parallel sign)Si[110], AlN<1120>(parallel sign)Si[100], and AlN<0110>(parallel sign)Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed.

  15. Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

    2012-06-01

    Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

  16. Reactive magnetron sputtering of Cu2O: Dependence on oxygen pressure and interface formation with indium tin oxide

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2011-06-01

    Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu2O) are identified. In addition, the interface formation between Cu2O and Sn-doped In2O3 (ITO) was studied by stepwise deposition of Cu2O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset ΔEVB = 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu2O/n-ITO junctions, which have been investigated for thin film solar cells.

  17. A study of structure and properties of Ti-doped DLC film by reactive magnetron sputtering with ion implantation

    NASA Astrophysics Data System (ADS)

    Ma, Guojia; Gong, Shuili; Lin, Guoqiang; Zhang, Lin; Sun, Gang

    2012-01-01

    Ti-doped diamond-like carbon (DLC) films were prepared on Ti alloys by reactive magnetron sputtering combined with PSII technology. The structure and properties of unmodified and Ti-doped DLC films were analyzed in a systematic way by different testing, such as TEM, XPS, frictional wear testing, contact angle measurement and so on. The results showed that Ti-doped DLC was a typical a-C:H film containing TiC nanometer grains, whose mechanical properties were obviously improved, such as hardness, wear resistance and cohesive strength, still kept good wear resistance at the ambient temperature of 450 °C, and held a rather large mean water contact angle of 104.2 ± 1°.

  18. Microstructural studies of nanocomposite thin films of Ni/CrN prepared by reactive magnetron sputtering.

    PubMed

    Kuppusami, P; Thirumurugesan, R; Divakar, R; Kataria, S; Ramaseshan, R; Mohandas, E

    2009-09-01

    Synthesis and characterization of nanocomposites of Ni/CrN thin films prepared by DC magnetron sputtering from a target of 50 wt.%Ni-50 wt.%Cr is investigated. The films prepared as a function of nitrogen flow rate and substrate temperature showed that the films contained Ni and CrN phases with crystallite sizes in the nanometer range. Measurement of nanomechanical properties of the composite films exhibited a significant decrease in the values of hardness and Young's modulus than those of pure CrN films. PMID:19928270

  19. Structural parameters and polarization properties of TiN thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Solovan, M. M.; Brus, V. V.; Pidkamin, L. J.; Maryanchuk, P. D.; Dobrovolsky, Yu. G.

    2015-11-01

    We report the results of the investigation of morphological, structural, optical and plarimeteric properties of titanium nitride thin films deposited on silicon and glass substrates. The magnetron sputtered titanium nitride thin films were established to possess crystalline structure with the average grain size about D = 15 nm. The method of correlation matrix is was applied for the analysis of polarization properties of scattered light by the titanium nitride thin film. The obtained experimental result, can be explained by the presence of the effects of linear and circular dichroism in the material of the titanium nitride thin films under investigations.

  20. Effects of an unbalanced magnetron in a unique dual-cathode, high rate reactive sputtering system

    NASA Technical Reports Server (NTRS)

    Rohde, S. L.; Petrov, I.; Sproul, W. D.; Barnett, S. A.; Rudnik, P. J.; Graham, M. E.

    1990-01-01

    Simple plasma and magnetic field measurements are presented to illustrate the opportunities afforded by using unbalanced magnetrons in a dual-cathode system. The system employs a pair of opposed cathodes, 38 cm x 13 cm, placed 27.5 cm apart, to coat specimens mounted on a rotational substrate holder. Comparisons are drawn between the original 'balanced' magnetron and several unbalanced configurations in terms of field strengths, deposition rates, etching characteristics, and substrate ion current densities for the growth of TiN films. The effects of 'unbalancing' on the nature of the plasma within the 3D geometry of the deposition chamber are elucidated via plasma probe and magnetic field studies performed under a variety of conditions. All the unbalanced configurations examined provided enhanced ion bombardment at the surface of the growing film. The closed-field or opposed magnet geometry resulted in a threefold or greater increase in current density when compared with that obtained using the corresponding mirrored geometry under the same conditions.

  1. Aluminum-nitride codoped zinc oxide films prepared using a radio-frequency magnetron cosputtering system

    SciTech Connect

    Liu, D.-S.; Sheu, C.-S.; Lee, C.-T.

    2007-08-01

    Al-N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system at room temperature. AlN and ZnO materials were employed as the cosputtered targets. The as-deposited cosputtered films at various theoretical atomic ratios [Al/(Al+Zn) at. %] showed n-type conductive behavior in spite of the N atoms exceeding that of the Al dopants, indicating that the N-related acceptors were still inactive. The crystalline structure was obviously correlated with the cosputtered AlN contents and eventually evolved into an amorphous structure for the Al-N codoped ZnO film at a theoretical Al doping level reaching 60%. With an adequate postannealing treatment, the N-related acceptors were effectively activated and the p-type ZnO conductive behavior achieved. The appearance of the Zn{sub 3}N{sub 2} phase in the x-ray diffraction pattern of the annealed Al-N codoped ZnO film provided evidence of the nitrification of zinc ions. The redshift of the shallow level transition and the apparent suppression of the oxygen-related deep level emission investigated from the photoluminescence spectrum measured at room temperature were concluded to be influenced by the activated N-related acceptors. In addition, the activation of the N acceptors denoted as N-Zn bond and the chemical bond related to the Zn{sub 3}N{sub 2} crystalline structure were also observed from the associated x-ray photoelectron spectroscopy spectra.

  2. Obtaining Au thin films in atmosphere of reactive nitrogen through magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Quintero, J. H.; Ospina, R.; Mello, A.

    2016-02-01

    4d and 5d series of the transition metals are used to the obtaining nitrides metallic, due to the synthesis of PtN, AgN and AuN in the last years. Different nitrides are obtained in the Plasma Assisted Physics Vapour Deposition system, due to its ionization energy which is necessary for their formation. In this paper a Magnetron Sputtering system was used to obtain Au thin films on Si wafers in Nitrogen atmosphere. The substrate temperature was varied between 500 to 950°C. The samples obtained at high temperatures (>500°C) show Au, Si and N elements, as it is corroborated in the narrow spectrum obtained for X-Ray Photoelectron Spectroscopy; besides the competition of orientation crystallographic texture between (111) and (311) directions was present in the X-Ray Diffraction analysis to the sample heated at 950°C.

  3. Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

    SciTech Connect

    Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz; Jensen, Jens; Hultman, Lars

    2013-01-15

    The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inert gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.

  4. Comparison of Y2O3:Bi3+ phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

    NASA Astrophysics Data System (ADS)

    Jafer, R. M.; Yousif, A.; Kumar, Vinod; Pathak, Trilok Kumar; Purohit, L. P.; Swart, H. C.; Coetsee, E.

    2016-09-01

    The reactive radio-frequency (RF) magnetron sputtering and spin coating fabrication techniques were used to fabricate Y2-xO3:Bix=0.5% phosphor thin films. The two techniques were analysed and compared as part of investigations being done on the application of down-conversion materials for a Si solar cell. The morphology, structural and optical properties of these thin films were investigated. The X-ray diffraction results of the thin films fabricated by both techniques showed cubic structures with different space groups. The optical properties showed different results because the Bi3+ ion is very sensitive towards its environment. The luminescence results for the thin film fabricated by the spin coating technique is very similar to the luminescence observed in the powder form. It showed three obvious emission bands in the blue and green regions centered at about 360, 410 and 495 nm. These emissions were related to the 3P1-1S0 transition of the Bi3+ ion situated in the two different sites of the Y2O3 matrix with I a-3(206) space group. Whereas the thin film fabricated by the radio frequency magnetron technique showed a broad single emission band in the blue region centered at about 416 nm. This was assigned to the 3P1-1S0 transition of the Bi3+ ion situated in one of the Y2O3 matrix's sites with a Fm-3 (225) space group. The spin coating fabrication technique is suggested to be the best technique to fabricate the Y2O3:Bi3+ phosphor thin films.

  5. Characterization of thin MoO3 films formed by RF and DC-magnetron reactive sputtering for gas sensor applications

    NASA Astrophysics Data System (ADS)

    Yordanov, R.; Boyadjiev, S.; Georgieva, V.; Vergov, L.

    2014-05-01

    The present work discusses a technology for deposition and characterization of thin molybdenum oxide (MoOx, MoO3) films studied for gas sensor applications. The samples were produced by reactive radio-frequency (RF) and direct current (DC) magnetron sputtering. The composition and microstructure of the films were studied by XPS, XRD and Raman spectroscopy, the morphology, using high resolution SEM. The research was focused on the sensing properties of the sputtered thin MoO3 films. Highly sensitive gas sensors were implemented by depositing films of various thicknesses on quartz resonators. Making use of the quartz crystal microbalance (QCM) method, these sensors were capable of detecting changes in the molecular range. Prototype QCM structures with thin MoO3 films were tested for sensitivity to NH3 and NO2. Even in as-deposited state and without heating the substrates, these films showed good sensitivity. Moreover, no additional thermal treatment is necessary, which makes the production of such QCM gas sensors simple and cost-effective, as it is fully compatible with the technology for producing the initial resonator. The films are sensitive at room temperature and can register concentrations as low as 50 ppm. The sorption is fully reversible, the films are stable and capable of long-term measurements.

  6. Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Jin, Hao; Feng, Bin; Dong, Shurong; Zhou, Changjian; Zhou, Jian; Yang, Yi; Ren, Tianling; Luo, Jikui; Wang, Demiao

    2012-07-01

    Aluminum nitride (AlN) thin films with c-axis preferred orientation have been prepared by reactive direct-current (DC) magnetron sputtering. The degree of preferred crystal orientation, the cross-sectional structure, and the surface morphology of AlN thin films grown on Si (100) substrates at various substrate temperatures from 60°C to 520°C have been investigated by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Results show that the substrate temperature has a significant effect on the structural properties, such as the degree of c-axis preferred orientation, the full-width at half-maximum (FWHM) of the rocking curve, the surface morphology, and the cross-sectional structure as well as the deposition rate of the AlN thin films. The optimal substrate temperature is 430°C, with corresponding root-mean-square surface roughness ( R rms) of 1.97 nm, FWHM of AlN (002) diffraction of 2.259°, and deposition rate of 20.86 nm/min. The mechanisms behind these phenomena are discussed. Finally, film bulk acoustic resonators based on AlN films were fabricated; the corresponding typical electromechanical coupling coefficient ( k {t/2}) is 5.1% with series and parallel frequencies of 2.37 GHz and 2.42 GHz, respectively.

  7. Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

    NASA Astrophysics Data System (ADS)

    Szymańska, Magdalena; Gierałtowska, Sylwia; Wachnicki, Łukasz; Grobelny, Marcin; Makowska, Katarzyna; Mroczyński, Robert

    2014-05-01

    The purpose of this work was to compare the structural and electrical properties of magnetron sputtered hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films. A careful analysis of the influence of deposition process parameters, among them: pressure in the reactor chamber, Ar and O2 flow rate, power applied to the reactor chamber and deposition time, on electro-physical properties of HfOx and HfOxNy layers has been performed. In the course of this work we performed number of experiments by means of Taguchi's orthogonal arrays approach. Such a method allowed for the determination of dielectric layers properties depending on process parameters with relatively low amount of experiments. Moreover, the effects of post-deposition annealing on electrical characteristics of metal-insulator-semiconductor (MIS) structures with HfOx or HfOxNy gate dielectric and its structural properties have also been reported. Investigated hafnia thin films were characterized by means of spectroscopic ellipsometry (SE), electrical characteristics measurements, atomic force microscopy (AFM), X-ray diffraction spectroscopy (XRD) and Rutherford backscattering spectrometry (RBS).

  8. Process monitoring during AlN{sub x}O{sub y} deposition by reactive magnetron sputtering and correlation with the film's properties

    SciTech Connect

    Borges, Joel Vaz, Filipe; Marques, Luis; Martin, Nicolas

    2014-03-15

    In this work, AlN{sub x}O{sub y} thin films were deposited by reactive magnetron sputtering, using an aluminum target and an Ar/(N{sub 2}+O{sub 2}) atmosphere. The direct current magnetron discharge parameters during the deposition process were investigated by optical emission spectroscopy and a plasma floating probe was used. The discharge voltage, the electron temperature, the ion flux, and the optical emission lines were recorded for different reactive gas flows, near the target and close to the substrate. This information was correlated with the structural features of the deposits as a first step in the development of a system to control the structure and properties of the films during reactive magnetron sputtering. As the target becomes poisoned, the discharge voltage suffers an important variation, due to the modification of the secondary electron emission coefficient of the target, which is also supported by the evolution of the electron temperature and ion flux to the target. The sputtering yield of the target was also affected, leading to a reduction of the amount of Al atoms arriving to the substrate, according to optical emission spectroscopy results for Al emission line intensity. This behavior, together with the increase of nonmetallic elements in the films, allowed obtaining different microstructures, over a wide range of compositions, which induced different electrical and optical responses of films.

  9. Temperature-dependent microstructural evolution of Ti2AlN thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhang, Zheng; Jin, Hongmei; Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun; Sullivan, Michael B.; Wang, Shi Jie

    2016-04-01

    Ti2AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti2Al compound target in a mixed N2/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti2AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti2AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  10. Effect of duty cycle on the electrical and optical properties of VOx film deposited by pulsed reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dong, Xiang; Wu, Zhiming; Xu, Xiangdong; Wei, Xiongbang; Jiang, Yadong

    2013-12-01

    Vanadium oxide (VOx) films were deposited onto well cleaned glass substrates by bipolar pulsed reactive magnetron sputtering at room temperature. Dependence of the structure, composition, optical and electrical properties of the films on the pulsed power's duty cycle has been investigated. The results from the X-ray diffraction (XRD) analysis show that there was no remarkable change in the amorphous structure in the films with duty cycle can be observed. But chemical analysis of the surface evaluated with x-ray photoelectron spectroscopy (XPS) indicates that decrease the duty cycle favors to enhance the oxidation of the vanadium. The optical and electrical properties of the films were characterized by spectroscopic ellipsometry and temperature dependent resistivity measurements, respectively. The evolution of the transmittance, optical band gap, optical constants, resistivity and temperature coefficient of resistance (TCR) of the deposited films with duty cycle was analyzed and discussed. In comparison with conventional DC sputtering, under the same discharge atmosphere and power level, these parameters of the VOx films can be modified over a broad range by duty cycle. Therefore adjusting the duty cycle during deposition, which is an effective way to control and optimize the performances of the VOx film for various optoelectronic devices applications.

  11. Visible light-induced photocatalytic properties of WO{sub 3} films deposited by dc reactive magnetron sputtering

    SciTech Connect

    Imai, Masahiro; Kikuchi, Maiko; Oka, Nobuto; Shigesato, Yuzo

    2012-05-15

    The authors examined the photocatalytic activity of WO{sub 3} films (thickness 500-600 nm) deposited on a fused quartz substrate heated at 350-800 deg. C by dc reactive magnetron sputtering using a W metal target under the O{sub 2} gas pressure from 1.0 to 5.0 Pa. Films deposited at 800 deg. C under 5.0 Pa have excellent crystallinity of triclinic, P1(1) structure and a large surface area, as confirmed by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Exposure of acetaldehyde (CH{sub 3}CHO) adsorbed onto the film surface to ultraviolet, visible, or standard fluorescence light induces oxidative photocatalytic decomposition indicated by a decrease in CH{sub 3}CHO concentration and generation of CO{sub 2} gas. For all three types of irradiation, concentration ratio of decreased CH{sub 3}CHO to increased CO{sub 2} is about 1:1, suggesting the possible presence of intermediates. The sputter-deposited WO{sub 3} film can be a good candidate as a visible light-responsive photocatalyst.

  12. Proton conductive tantalum oxide thin film deposited by reactive DC magnetron sputtering for all-solid-state switchable mirror

    NASA Astrophysics Data System (ADS)

    Tajima, K.; Yamada, Y.; Bao, S.; Okada, M.; Yoshimura, K.

    2008-03-01

    Our developed all-solid-state switchable mirror as a smart window is consisted in multi-layer of Mg4Ni/Pd/Ta2O5/WO3/ITO/glass and can switch reversibly from the reflective state to the transparent one. The development of high performance solid electrolyte thin film of Ta2O5 is important for fast speed switching and high durability of the device. In this work, we have investigated the electrochemical property of Ta2O5 thin film deposited by reactive DC magnetron sputtering. The effect of thickness on electrochemical and proton conductivities of Ta2O5 thin film was investigated. The Ta2O5 thin film with a thickness of 400 nm had better proton conductivity of 1.5×10-9 S/cm measured by AC impedance method. The transmittance at wavelength of 670 nm of the device with 400 nm thick Ta2O5 thin film was changed from 0.1% (reflective state) to 51% (transparent state) within 10 s by applying voltage of 5 V. The device showed high durability up to two-thousand switching cycles.

  13. Effects of Ti addiction in WO 3 thin film ammonia gas sensor prepared by dc reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Hu, Ming; Yong, Cholyun; Feng, Youcai; Lv, Yuqiang; Han, Lei; Liang, Jiran; Wang, Haopeng

    2006-11-01

    WO 3 sensing films (1500 Å) were deposited using dc reactive magnetron sputtering method on alumina substrate on which patterned interdigital Pt electrodes were previously formed. The additive Ti was sputtered with different thickness (100-500 Å) onto WO 3 thin films and then the films as-deposited were annealed at 400°C in air for 3h. The crystal structure and chemical composition of the films were characterized by XRD and XPS analysis. The effect of Ti addition on sensitive properties of WO 3 thin film to the NH 3 gas was then discussed. WO 3 thin films added Ti revealed excellent sensitivity and response characteristics in the presence of low concentration of NH 3 (5-400 ppm) gas in air at 200°C operating temperature. Especially,in case 300 Å thickness of additive Ti, WO 3 thin films have a promotional effect on the response speed to NH 3 and selectivity enhanced with respect to other gases (CO, C IIH 5OH, CH 4). The influence of different substrates, including alumina, silicon and glass, on sensitivity to NH 3 gas has also been investigated.

  14. Effect of Duty Cycle on Characteristics of CrNx Thin Films Deposited by Pulsed Direct Current Reactive Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Chang, Chi-Lung; Wu, Bo-Yi; Chen, Pin-Hung; Chen, Wei-Chih; Ho, Chun-Ta; Wu, Wan-Yu

    2013-11-01

    CrNx thin films have been deposited on silicon wafer, 304 stainless steel, and tungsten carbide substrates using pulsed DC reactive magnetron sputtering. A 10 kHz unipolar mode and a N2/Ar ratio of 17.5% were used. During the deposition, the substrate was not biased and not heated during the entire deposition time of 30 min. The microstructure, crystalline phase, and mechanical properties of the obtained CrNx thin films were examined to investigate the effect of the duty cycle. The results show that the maximum current and power density increase with decreasing duty cycle from 100% (DC) to 5%. Although the thickness of the CrNx thin films decreases with decreasing duty cycle, the ratio of the thickness to the pulse on-time shows a maximum of 273.3 nm/min at the lowest duty cycle of 5%. The obtained CrNx thin films show a mixture of the Cr2N and CrN phases. Moreover, the Cr-N bonding state and the percentages of CrN and Cr2N vary with the duty cycle. The effects of the duty cycle on the hardness, coefficient of friction, and corrosion behavior of the CrNx thin films are also investigated in this study.

  15. Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering

    SciTech Connect

    Ni, Chih-Jui; Chau-Nan Hong, Franklin

    2014-05-15

    Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron sputtering. Inductively coupled-plasma (ICP) source was installed between the substrate holder and the sputtering target to increase the plasma density and the degree of ionization of nitrogen gas. Liquid Ga and Ar/N{sub 2} were used as the sputtering target and sputtering gases, respectively. X-ray diffraction measurements confirmed that the authors could grow high quality GaN crystallites at 500 °C. However, the crystalline GaN (0002) peak remained even by lowering the growth temperature down to 300 °C. The N:Ga ratio of the film grown at 500 °C was almost 1:1, and the nitrogen composition became higher toward the 1:1 N:Ga ratio with increasing the growth temperature. The high degree of ionization induced by ICP source was essential to the growth of high crystalline quality GaN films.

  16. Investigations on opto-electronical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films annealed at different temperatures

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Rao, T. Subba

    2013-01-01

    In the present study transparent conducting zinc aluminum oxide (ZAO) thin films were prepared by DC reactive magnetron sputtering technique. The films were deposited on glass substrates at 200 °C and annealed from 200 °C to 500 °C. XRD patterns of ZAO films shows (0 0 2) diffraction peak of hexagonal wurtzite, meaning that the films have c-axis orientation perpendicular to the substrate. Crystallite size was calculated from X-ray diffraction (XRD) spectra using the Scherrer formula. The surface morphology of the films was observed by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The electrical conductivity increases with increase of annealing temperature. The activation energies of conduction were obtained from an Arrhenius equation. The best characteristics of ZAO films have been obtained for the films annealed at 400 °C with an average transmittance of 88% and a minimum resistivity of 2.2 × 10-4 Ω cm. The optical band gap, optical constants, and electron concentrations of ZAO films are obtained from UV-vis-IR spectrophotometer data.

  17. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    PubMed

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  18. Composition, structure and properties of SiN x films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Sun, H.; Wan, G. J.; Leng, Y. X.; Chen, J. Y.

    2005-11-01

    Silicon nitride (SiNx) thin films are of special interest in both scientific research and industrial applications due to their remarkable properties such as high thermal stability, chemical inertness, high hardness and good dielectric properties. In this work, SiNx films were fabricated by pulsed reactive closed-field unbalanced magnetron sputtering of high purity single crystal silicon targets in an Ar-N2 mixture. The effect of N2 partial pressure on the film composition, chemical bonding configurations, surface morphology, surface free energy, optical and mechanical properties were investigated. We showed that with increased N2 partial pressure, the N to Si ratio (N/Si) in the film increased and N atoms are preferentially incorporated in the NSi3 stoichiometric configuration. It leads the Si-N network a tendency to chemical order. Films deposited at a high N2 fraction were consistently N-rich. The film surface transformed from a loose granular structure with microporosity to a homogeneous, continuous, smooth and dense structure. A progressive densification of the film microstructure occurs as the N2 fraction is increased. The reduced surface roughness and the increased N incorporation in the film give rise to the increased contact angle with double-distilled water from 24° to 49.6°. To some extent, the SiNx films deposited by pulsed magnetron sputtering are hydrophilic in nature. The as-deposited SiNx films exhibit good optical transparency in the visible region and the optical band gap Eopt can be varied from 1.68 eV for a-Si to 3.62 eV for SiNx films, depending on the synthesis parameters. With the increase of the N/Si atomic ratio, wear resistance of the SiNx films was improved, a consequence of increased hardness and elastic modulus. The SiNx films have lower friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction, where the SiNx films experienced only fatigue wear.

  19. Degradation and Characterization of Resorbable Phosphate-Based Glass Thin-Film Coatings Applied by Radio-Frequency Magnetron Sputtering.

    PubMed

    Stuart, Bryan W; Gimeno-Fabra, Miquel; Segal, Joel; Ahmed, Ifty; Grant, David M

    2015-12-16

    Quinternary phosphate-based glasses of up to 2.67 μm, deposited by radio-frequency magnetron sputtering, were degraded in distilled water and phosphate-buffered saline (PBS) to investigate their degradation characteristics. Magnetron-sputtered coatings have been structurally compared to their compositionally equivalent melt-quenched bulk glass counterparts. The coatings were found to have structurally variable surfaces to melt-quenched glass such that the respective bridging oxygen to nonbridging oxygen bonds were 34.2% to 65.8% versus 20.5% to 79.5%, forming metaphosphate (PO3)(-) (Q(2)) versus less soluble (P2O7)(4-) (Q(1)) and (PO4)(3-) (Q(0)), respectively. This factor led to highly soluble coatings, exhibiting a t(1/2) degradation dependence in the first 2 h in distilled water, followed by a more characteristic linear profile because the subsequent layers were less soluble. Degradation was observed to preferentially occur, forming voids characteristic of pitting corrosion, which was confirmed by the use of a focused ion beam. Coating degradation in PBS precipitated a (PO3)(-) metaphosphate, an X-ray amorphous layer, which remained adherent to the substrate and seemingly formed a protective diffusion barrier, which inhibited further coating degradation. The implications are that while compositionally similar, sputter-deposited coatings and melt-quenched glasses are structurally dissimilar, most notably, with regard to the surface layer. This factor has been attributed to surface etching of the as-deposited coating layer during deposition and variation in the thermal history between the processes of magnetron sputtering and melt quenching. PMID:26523618

  20. Process-structure-property correlations in pulsed dc reactive magnetron sputtered vanadium oxide thin films

    SciTech Connect

    Venkatasubramanian, Chandrasekaran; Cabarcos, Orlando M.; Drawl, William R.; Allara, David L.; Ashok, S.; Horn, Mark W.; Bharadwaja, S. S. N.

    2011-11-15

    Cathode hysteresis in the reactive pulsed dc sputtering of a vanadium metal target was investigated to correlate the structural and electrical properties of the resultant vanadium oxide thin films within the framework of Berg's model [Berg et al., J. Vac. Sci. Technol. A 5, 202 (1987)]. The process hysteresis during reactive pulsed dc sputtering of a vanadium metal target was monitored by measuring the cathode (target) current under different total gas flow rates and oxygen-to-argon ratios for a power density of {approx}6.6.W/cm{sup 2}. Approximately 20%-25% hysteretic change in the cathode current was noticed between the metallic and oxidized states of the V-metal target. The extent of the hysteresis varied with changes in the mass flow of oxygen as predicted by Berg's model. The corresponding microstructure of the films changed from columnar to equiaxed grain structure with increased oxygen flow rates. Micro-Raman spectroscopy indicates subtle changes in the film structure as a function of processing conditions. The resistivity, temperature coefficient of resistance, and charge transport mechanism, obeying the Meyer-Neldel relation [Meyer and Neldel, Z. Tech. Phys. (Leipzig) 12, 588 (1937)], were correlated with the cathode current hysteric behavior.

  1. High-rate reactive magnetron sputtering of zirconia films for laser optics applications

    NASA Astrophysics Data System (ADS)

    Juškevičius, K.; Audronis, M.; Subačius, A.; Drazdys, R.; Juškėnas, R.; Matthews, A.; Leyland, A.

    2014-09-01

    ZrO2 exhibits low optical absorption in the near-UV range and is one of the highest laser-induced damage threshold (LIDT) materials; it is, therefore, very attractive for laser optics applications. This paper reports explorations of reactive sputtering technology for deposition of ZrO2 films with low extinction coefficient k values in the UV spectrum region at low substrate temperature. A high deposition rate (64 % of the pure metal rate) process is obtained by employing active feedback reactive gas control which creates a stable and repeatable deposition processes in the transition region. Substrate heating at 200 °C was found to have no significant effect on the optical ZrO2 film properties. The addition of nitrogen to a closed-loop controlled process was found to have mostly negative effects in terms of deposition rate and optical properties. Open-loop O2 gas-regulated ZrO2 film deposition is slow and requires elevated (200 °C) substrate temperature or post-deposition annealing to reduce absorption losses. Refractive indices of the films were distributed in the range n = 2.05-2.20 at 1,000 nm and extinction coefficients were in the range k = 0.6 × 10-4 and 4.8 × 10-3 at 350 nm. X-ray diffraction analysis showed crystalline ZrO2 films consisted of monoclinic + tetragonal phases when produced in Ar/O2 atmosphere and monoclinic + rhombohedral or a single rhombohedral phase when produced in Ar/O2 + N2. Optical and physical properties of the ZrO2 layers produced in this study are suitable for high-power laser applications in the near-UV range.

  2. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    NASA Technical Reports Server (NTRS)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  3. Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

    SciTech Connect

    Kuschel, Thomas; Keudell, Achim von

    2010-05-15

    Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with this microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.

  4. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

    SciTech Connect

    Abadias, G.; Koutsokeras, L. E.; Dub, S. N.; Tolmachova, G. N.; Debelle, A.; Sauvage, T.; Villechaise, P.

    2010-07-15

    Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.

  5. Growth and characterization of chromium oxide coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Barshilia, Harish C.; Rajam, K. S.

    2008-12-01

    Approximately 0.2-3.2 μm thick single phase chromium oxide (Cr 2O 3) coatings with different oxygen flow rates were deposited on silicon and mild steel substrates at low substrate temperature (˜60 °C) by pulsed-direct current (DC) reactive unbalanced magnetron sputtering. Two asymmetric bipolar-pulsed DC generators were used to co-sputter two Cr targets, in Ar + O 2 plasma. The coatings were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation hardness tester, optical microscopy, atomic force microscopy, micro-Raman spectroscopy, spectroscopic ellipsometry and potentiodynamic polarization techniques. The XRD data showed the presence of mixture of crystalline (rhombohedral Cr 2O 3) and amorphous phases for the coatings prepared with oxygen flow rate less than 10 sccm. A complete transformation to amorphous phase was observed at higher oxygen flow rates. The XRD results were supported by Raman spectroscopy data. The XPS data suggested that the chemical state of Cr was in the form of Cr 3+. The chromium oxide coatings exhibited a maximum hardness of 22 GPa and an elastic modulus of 208 GPa. The coatings exhibited high thermal stability upon annealing in vacuum up to 500 °C and retained hardness as high as 17 GPa. Spectroscopic ellipsometry data indicated that coatings prepared at higher oxygen flow rates were dielectric in nature and those prepared at low oxygen flow rates exhibited an intermediate character, i.e., a transition between the dielectric and the metallic behavior. The corrosion behavior of Cr 2O 3 coating deposited on mild steel substrates was investigated using potentiodynamic polarization in 3.5% NaCl solution. The results indicated that Cr 2O 3 coating exhibited superior corrosion resistance as compared to the uncoated substrate.

  6. High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode

    SciTech Connect

    Kupfer, H.; Kleinhempel, R.; Richter, F.; Peters, C.; Krause, U.; Kopte, T.; Cheng, Y.

    2006-01-15

    A reactive ac pulsed dual magnetron sputtering process for MgO thin-film deposition was equipped with a closed-loop control of the oxygen flow rate (F{sub O2}) using the 285 nm magnesium radiation as input. Owing to this control, most of the unstable part of the partial pressure versus flowrate curve became accessible. The process worked steadily and reproducible without arcing. A dynamic deposition rate of up to 35 nm m/min could be achieved, which was higher than in the oxide mode by about a factor of 18. Both process characteristics and film properties were investigated in this work in dependence on the oxygen flow, i.e., in dependence on the particular point within the transition region where the process is operated. The films had very low extinction coefficients (<5x10{sup -5}) and refractive indices close to the bulk value. They were nearly stoichiometric with a slight oxygen surplus (Mg/O=48/52) which was independent of the oxygen flow. X-ray diffraction revealed a prevailing (111) orientation. Provided that appropriate rf plasma etching was performed prior to deposition, no other than the (111) peak could be detected. The intensity of this peak increased with increasing F{sub O{sub 2}}, indicating an even more pronounced (111) texture. The ion-induced secondary electron emission coefficient (iSEEC) was distinctly correlated with the markedness of the (111) preferential orientation. Both refractive index and (111) preferred orientation (which determines the iSEEC) were found to be improved in comparison with the MgO growth in the fully oxide mode. Consequently, working in the transition mode is superior to the oxide mode not only with respect to the growth rate, but also to most important film properties.

  7. Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Peng, Yunfei; Wang, Hailong; Zhang, Wenqi; Li, Bin; Zhou, Dongzhan; Zhang, Xiqing; Wang, Yongsheng

    2016-07-01

    The fabrication and electrical characterization of InZnO:N thin film transistors (TFTs) were investigated in this work. The InZnO:N film was deposited on SiO2/ p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature. In order to optimize the performance of the InZnO:N TFTs, the effect of the oxygen contents in the preparation of the active layer is investigated. We found that an appropriate O2/Ar gas flow ratio is very beneficial for the InZnO:N TFTs, and when the O2/Ar gas flow ratio is at 1/30, the transistor exhibited a high field-effect mobility of 39.3 cm2/Vs, a threshold voltage of 2.4 V and a I ON/OFF ratio of 1.1 × 107.

  8. Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

    PubMed Central

    2013-01-01

    The nanomechanical properties of BiFeO3 (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO2/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young's modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation. PMID:23799923

  9. Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Peng, Yunfei; Wang, Hailong; Zhang, Wenqi; Li, Bin; Zhou, Dongzhan; Zhang, Xiqing; Wang, Yongsheng

    2016-04-01

    The fabrication and electrical characterization of InZnO:N thin film transistors (TFTs) were investigated in this work. The InZnO:N film was deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature. In order to optimize the performance of the InZnO:N TFTs, the effect of the oxygen contents in the preparation of the active layer is investigated. We found that an appropriate O2/Ar gas flow ratio is very beneficial for the InZnO:N TFTs, and when the O2/Ar gas flow ratio is at 1/30, the transistor exhibited a high field-effect mobility of 39.3 cm2/Vs, a threshold voltage of 2.4 V and a I ON/OFF ratio of 1.1 × 107.

  10. Titanium Aluminum Nitride Films Deposited by AC Reactive Magnetron Sputtering: Study of Positioning Effect in an Inverted Cylindrical Magnetron Sputtering System

    NASA Astrophysics Data System (ADS)

    Vandross, George Clinton, II

    TiAlN films were deposited on glass substrates by AC magnetron sputtering at 2 kW with constant Argon and Nitrogen gas flow rates to study the effects of positioning on the deposited films. The deposition system used was an ICM-10 IsoFlux cylindrical magnetron sputtering chamber. The samples were placed in different positions and tilts with respect to the location of the Titanium and Aluminum targets in the chamber. It was found that with change in position and application of tilts, deposited films acquired different physical and chemical properties. It is believed that the differences in these properties were caused by to the change in the incident angle of bombardment of the samples, and the change in surface areas of the samples presented to the targets at each location. As related to the physical traits of the samples, analysis using Scanning Electron Microscopy of the samples displayed variations in the topography, where differences in grain density could be noted as well as structure formations. The chemical properties were also noted to be affected by the variation of tilt and position applied to the sample. X-ray Diffraction Spectroscopy analysis of the samples showed the intensity of the TiAlN characteristic peak of the samples to differ from sample to sample. Results from the XRD analysis of this work showed a 157% and 176% increase in peak intensity of the 0° tilt sample of the Bottom Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. The results from the XRD analysis of this work also showed a 74% and 151% increase of the peak intensity for the 0° tilt sample of the Middle Plate when compared to the 45° tilt sample and 60° tilt sample respectively of the same plate. Whereas results for this work showed a 54% and 41% decrease in peak intensity of the 0° tilt sample of the Top Plate from the 45° tilt sample and 60° tilt sample respectively of the same plate. Energy Dispersive X-ray Spectroscopy was also performed

  11. Correlation between Microstructure and Mechanical Properties ofTiC Films Produced by Vacuum arc Deposition and Reactive MagnetronSputtering

    SciTech Connect

    Monteiro, O.R.; Delplancke-Ogletree, M.P.; Winand, R.; Brown, I.G.

    1999-07-29

    We have studied the synthesis of TiC films by vacuum arc deposition and reactive magnetron sputtering over a wide range of compositions. The films were deposited on silicon and tool steel. The films were characterized by various techniques: Auger electron and X-ray photoelectron spectroscopies, Rutherford backscattering, transmission electron diffraction and X-ray diffraction. Mechanical properties such as stress, adhesion, friction coefficient and wear resistance were obtained by carrying measurements of the curvature of the silicon substrate, pull tests, and ball-on-disk tests, respectively.

  12. Highly oriented {delta}-Bi{sub 2}O{sub 3} thin films stable at room temperature synthesized by reactive magnetron sputtering

    SciTech Connect

    Lunca Popa, P.; Kerdsongpanya, S.; Lu, J.; Eklund, P.; Sonderby, S.; Bonanos, N.

    2013-01-28

    We report the synthesis by reactive magnetron sputtering and structural characterization of highly (111)-oriented thin films of {delta}-Bi{sub 2}O{sub 3}. This phase is obtained at a substrate temperature of 150-200 Degree-Sign C in a narrow window of O{sub 2}/Ar ratio in the sputtering gas (18%-20%). Transmission electron microscopy and x-ray diffraction reveal a polycrystalline columnar structure with (111) texture. The films are stable from room temperature up to 250 Degree-Sign C in vacuum and 350 Degree-Sign C in ambient air.

  13. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    SciTech Connect

    Kavitha, A.; Kannan, R.; Subramanian, N. Sankara; Loganathan, S.

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  14. Growth and characterization of TiAlN/CrAlN superlattices prepared by reactive direct current magnetron sputtering

    SciTech Connect

    Barshilia, Harish C.; Deepthi, B.; Rajam, K. S.; Bhatti, Kanwal Preet; Chaudhary, Sujeet

    2009-01-15

    TiAlN and CrAlN coatings were prepared using a reactive direct current magnetron sputtering system from TiAl and CrAl targets. Structural characterization of the coatings using x-ray diffraction (XRD) revealed the B1 NaCl structure of TiAlN and CrAlN coatings with a prominent reflection along the (111) plane. The XPS data confirmed the bonding structures of TiAlN and CrAlN single layer coatings. Subsequently, nanolayered multilayer coatings of TiAlN/CrAlN were deposited on silicon and mild steel (MS) substrates at different modulation wavelengths ({lambda}) with a total thickness of approximately 1.0 {mu}m. The modulation wavelengths were calculated from the x-ray reflectivity data using modified Bragg's law. TiAlN/CrAlN multilayer coatings were textured along (111) for {lambda}<200 A and the XRD patterns showed the formation of superlattice structure for coatings deposited at {lambda}=102 A. The x-ray reflectivity data showed reflections of fifth and seventh orders for multilayer coatings deposited at {lambda}=102 and 138 A, respectively, indicating the formation of sharp interfaces between TiAlN and CrAlN layers. The cross-sectional scanning electron microscopy image of TiAlN/CrAlN multilayer coatings indicated a noncolumnar and dense microstructure. A maximum hardness of 39 GPa was observed for TiAlN/CrAlN multilayer coatings deposited at {lambda}=93 A, which was higher than the rule-of-mixture value (30 GPa) for TiAlN and CrAlN. Study of thermal stability of the coatings in air using micro-Raman spectroscopy indicated that the TiAlN/CrAlN multilayer coatings were stable up to 900 deg. C in air. TiAlN/CrAlN multilayer coatings also exhibited improved corrosion resistance when compared to the MS substrate.

  15. Combined optical emission and resonant absorption diagnostics of an Ar-O2-Ce-reactive magnetron sputtering discharge

    NASA Astrophysics Data System (ADS)

    El Mel, A. A.; Ershov, S.; Britun, N.; Ricard, A.; Konstantinidis, S.; Snyders, R.

    2015-01-01

    We report the results on combined optical characterization of Ar-O2-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O2 content, etc. The absolute number density of the Arm is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Arm by O2 molecules at different oxygen contents. Quantitatively, the absolute number density of Arm is found to be equal to ≈ 3 × 108 cm- 3 in the metallic, and ≈ 5 × 107 cm- 3 in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime.

  16. Substrate temperature dependent surface morphology and photoluminescence of germanium quantum dots grown by radio frequency magnetron sputtering.

    PubMed

    Samavati, Alireza; Othaman, Zulkafli; Ghoshal, Sib Krishna; Dousti, Mohammad Reza; Kadir, Mohammed Rafiq Abdul

    2012-01-01

    The visible luminescence from Ge nanoparticles and nanocrystallites has generated interest due to the feasibility of tuning band gap by controlling the sizes. Germanium (Ge) quantum dots (QDs) with average diameter ~16 to 8 nm are synthesized by radio frequency magnetron sputtering under different growth conditions. These QDs with narrow size distribution and high density, characterized using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are obtained under the optimal growth conditions of 400 °C substrate temperature, 100 W radio frequency powers and 10 Sccm Argon flow. The possibility of surface passivation and configuration of these dots are confirmed by elemental energy dispersive X-ray (EDX) analysis. The room temperature strong visible photoluminescence (PL) from such QDs suggests their potential application in optoelectronics. The sample grown at 400 °C in particular, shows three PL peaks at around ~2.95 eV, 3.34 eV and 4.36 eV attributed to the interaction between Ge, GeO(x) manifesting the possibility of the formation of core-shell structures. A red shift of ~0.11 eV in the PL peak is observed with decreasing substrate temperature. We assert that our easy and economic method is suitable for the large-scale production of Ge QDs useful in optoelectronic devices. PMID:23202927

  17. Reactive magnetron sputtering of highly (001)-textured WS2-x films: Influence of Ne+, Ar+ and Xe+ ion bombardment on the film growth

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Seeger, S.; Sieber, I.; Bohne, W.; Röhrich, J.; Strub, E.; Mientus, R.

    2006-02-01

    Tungsten disulfide WS2 is a layer-type semi-conductor with an energy band gap and an absorption coefficient making it suitable as an absorber for thin film solar cells. In the article [1] WS2-x films were pre-pared by reactive magnetron sputtering from a metallic tungsten target in Ar-H2S atmospheres.The cover figure shows in situ energy-dispersive X-ray diffraction patterns for films deposited at different substrate potentials, i.e. for deposition conditions with ion assistance at different ion energies. These spectra and the corresponding SEM photographs of the film morphology show the strong influence of the ion energy on the film growth. The crystallographic struc-ture of WS2-x is shown between the two SEM pictures.The first author, Klaus Ellmer, is working at the Hahn-Meitner-Institut Berlin, Dept. of Solar Energy Research. His research fields are thin film deposition by reactive magnetron sputtering for solar cells, plasma characterization, in situ energy-dispersive X-ray diffraction and electronic transport in transpar-ent conductive oxides.

  18. Compositional, morphological and mechanical investigations of monolayer type coatings obtained by standard and reactive magnetron sputtering from Ti, TiB2 and WC

    NASA Astrophysics Data System (ADS)

    Jinga, V.; Mateescu, A. O.; Cristea, D.; Mateescu, G.; Burducea, I.; Ionescu, C.; Crăciun, L. S.; Ghiuţă, I.; Samoilă, C.; Ursuţiu, D.; Munteanu, D.

    2015-12-01

    The purpose of this work was to study new composite coatings that would have wear resistant properties. The coatings were obtained by standard and reactive simultaneous magnetron sputtering from three targets (Ti, TiB2, WC) with or without N2 as reactive gas. The chemical composition of the coatings was investigated by Rutherford backscattering spectrometry, while the morphological features were evaluated by atomic force microscopy. Some of the mechanical properties of the coatings, such as hardness and Young's modulus, were investigated by nanoindentation, while the adherence to the substrate was investigated by scratch tests. The wear resistance and friction coefficients were evaluated using a pin-on-disk tribometer. The films are hard (Hit between 20 and 22 GPa) and show promising results concerning their wear resistance, especially if the films would be paired with an appropriate substrate material.

  19. Effects of pulse frequency on the microstructure, composition and optical properties of pulsed dc reactively sputtered vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Dong, Xiang; Wu, Zhiming; Jiang, Yadong; Xu, Xiangdong; Yu, He; Gu, Deen; Wang, Tao

    2014-09-01

    Vanadium oxide (VOx) thin films were prepared on unheated glass substrate by pulsed dc reactive magnetron sputtering using different pulse frequency. Field emission scanning electron microscopy (FESEM), x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) measurements were made on the deposited VOx films to characterize the microstructure, composition and optical properties, respectively. It was found that under the same discharge power and argon-oxygen atmosphere, with the increase of pulse frequency, the vertical column-like structure in the films will gradually disappear and the ratio of high-valent VOx to low-valent VOx will obviously elevate. Optical parameters of the VOx films have been obtained by fitting the ellipsometric data (Ψ andΔ) using the Tauc-Lorentz dispersion relation and a multilayer model (air/roughness layer/VOx/glass). The results demonstrated that pulse frequency plays a critical role in determining the transmittance, refractive index, extinction coefficient and optical band gap etc. The correlations between the microstructure, composition, optical properties and pulse frequency are also given by our experiment results. And the mechanisms for the evolution of the microstructure, composition and optical properties with pulse frequency have been discussed. Overall, due to the pulse frequency had a great effect not only on the growth characteristics but also on the optical properties of the VOx films, thus through variation of the pulse frequency during deposition which provide a convenient and efficient approach to control and optimize the performances of the VOx films.

  20. [Thin calcium-phosphate coatings produced by high frequency magnetron sputtering and prospects for their use in biomedical engineering].

    PubMed

    Aronov, A M; Pichugin, V F; Eshenko, E V; Riabtseva, M A; Surmenev, R A; Tverdokhlebov, S I; Shesterikov, E V

    2008-01-01

    Thin calcium-phosphate coatings with thickness less than 2.7 m were prepared by radio-frequency magnetron sputtering technique on the surfaces of pure titanium, titanium alloy Ti6A14V and stainless ASTM 316. Results of scanning electron microscopy showed that all coatings were dense and poreless and did not have any visible defects or microcracks. Rutherford backscattering (RBS) revealed a prepared coating consisting only of calcium 33.6 (1.6 at%, phosphorous 16.5 (1.5 at%, and oxygen 48.6 (1.2 at%. The concentration of each above-mentioned element through the coating was almost constant. The physicomechanical properties of the prepared coatings were investigated using a nanoindentation technique. The values of nano-hardness and Young's modulus calculated on the basis of the obtained data were 10 GPa and 113 GPa, respectively. These values were higher than that of non-coated substrates, except titanium alloy due to the sputtering mechanism. It was found that the coating with a thickness less than 1.6 ?m possessed more adhesion strength than coatings with greater value of thickness. However, we suggest that all coatings have great cohesive resistance that does not depend on the coating thickness. PMID:18683576

  1. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    NASA Astrophysics Data System (ADS)

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-12-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation & immersion (E & I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm2) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

  2. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications

    PubMed Central

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation & immersion (E & I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm2) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance. PMID:26631493

  3. Improved electrochemical performance of LiCoO₂ electrodes with ZnO coating by radio frequency magnetron sputtering.

    PubMed

    Dai, Xinyi; Wang, Liping; Xu, Jin; Wang, Ying; Zhou, Aijun; Li, Jingze

    2014-09-24

    Surface modification of LiCoO2 is an effective method to improve its energy density and elongate its cycle life in an extended operation voltage window. In this study, ZnO was directly coated on as-prepared LiCoO2 composite electrodes via radio frequency (RF) magnetron sputtering. ZnO is not only coated on the electrode as thin film but also diffuses through the whole electrode due to the intrinsic porosity of the composite electrode and the high diffusivity of the deposited species. It was found that ZnO coating can significantly improve the cycling performance and the rate capability of the LiCoO2 electrodes in the voltage range of 3.0-4.5 V. The sample with an optimum coating thickness of 17 nm exhibits an initial discharge capacity of 191 mAh g(-1) at 0.2 C, and the capacity retention is 81% after 200 cycles. It also delivers superior rate performance with a reversible capacity of 106 mAh g(-1) at 10 C. The enhanced cycling performance and rate capability are attributed to the stabilized phase structure and improved lithium ion diffusion coefficient induced by ZnO coating as evidenced by X-ray diffraction, cyclic voltammetry, respectively. PMID:25158228

  4. Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

    PubMed

    Chen, Cong; Cheng, Yu; Dai, Qilin; Song, Hongwei

    2015-01-01

    In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance. PMID:26631493

  5. Single domain m-plane ZnO grown on m-plane sapphire by radio frequency magnetron sputtering.

    PubMed

    Lin, B H; Liu, W-R; Lin, C Y; Hsu, S T; Yang, S; Kuo, C C; Hsu, C-H; Hsieh, W F; Chien, F S-S; Chang, C S

    2012-10-24

    High-quality m-plane orientated ZnO films have been successfully grown on m-plane sapphire by using radio frequency magnetron sputtering deposition. The introduction of a nanometer-thick, low-temperature-grown ZnO buffer layer effectively eliminates inclusions of other undesirable orientations. The structure characteristics of the ZnO epi-layers were thoroughly studied by synchrotron X-ray scattering and transmission electron microscopy (TEM). The in-plane epitaxial relationship between ZnO and sapphire follows (0002)(ZnO) [parallel] (112[overline]0)(sapphire) and (112[overline]0)(ZnO) [parallel] (0006)(sapphire) and the ZnO/sapphire interface structure can be described by the domain matching epitaxy along the [112[overline]0](ZnO) direction. The vibrational properties of the films were investigated by polarization dependent micro-Raman spectroscopy. Both XRD and micro-Raman results reveal that the obtained m-ZnO layers are under an anisotropic biaxial strain but still retains a hexagonal lattice. PMID:22989018

  6. Optimization of Ta2O5 optical thin film deposited by radio frequency magnetron sputtering.

    PubMed

    Shakoury, R; Willey, Ronald R

    2016-07-10

    Radio frequency magnetron sputtering has been used here to find the parameters at which to deposit Ta2O5 optical thin films with negligible absorption in the visible spectrum. The design of experiment methodology was employed to minimize the number of experiments needed to find the optimal results. Two independent approaches were used to determine the index of refraction n and k values. PMID:27409310

  7. Growth of fullerene-like carbon nitride thin solid films by reactive magnetron sputtering; role of low-energy ion irradiation in determining microstructure and mechanical properties

    NASA Astrophysics Data System (ADS)

    Neidhardt, J.; Czigány, Zs.; Brunell, I. F.; Hultman, L.

    2003-03-01

    Fullerene-like (FL) carbon nitride (CNx) films were deposited on Si (100) substrates by dc reactive, unbalanced, magnetron sputtering in a N2/Ar mixture from a high-purity pyrolythic graphite cathode in a dual-magnetron system with coupled magnetic fields. The N2 fraction in the discharge gas (0%-100%) and substrate bias (-25 V; -40 V) was varied, while the total pressure (0.4 Pa) and substrate temperature (450 °C) was kept constant. The coupled configuration of the magnetrons resulted in a reduced ion flux density, leading to a much lower average energy per incorporated particle, due to a less focused plasma as compared to a single magnetron. This enabled the evolution of a pronounced FL microstructure. The nitrogen concentration in the films saturated rapidly at 14-18 at. %, as determined by elastic recoil analysis, with a minor dependence on the discharge conditions. No correlations were detected between the photoelectron N1s core level spectra and the different microstructures, as observed by high-resolution electron microscopy. A variety of distinct FL structures were obtained, ranging from structures with elongated and aligned nitrogen-containing graphitic sheets to disordered structures, however, not exclusively linked to the total N concentration in the films. The microstructure evolution has rather to be seen as in equilibrium between the two competing processes of adsorption and desorption of nitrogen-containing species at the substrate. This balance is shifted by the energy and number of arriving species as well as by the substrate temperature. The most exceptional structure, for lower N2 fractions, consists of well-aligned, multi-layered circular features (nano-onions) with an inner diameter of approximately 0.7 nm and successive shells at a distance of ˜0.35 nm up to a diameter of 5 nm. It is shown that the intrinsic stress formation is closely linked with the evolution and accommodation of the heavily bent fullerene-like sheets. The FL CNx

  8. Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, Michal; Kaczmarek, Danuta; Prociow, Eugeniusz; Domaradzki, Jaroslaw; Wojcieszak, Damian; Bocheński, Jakub

    2014-09-01

    In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10-2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

  9. Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zubkins, M.; Kalendarev, R.; Gabrusenoks, J.; Smits, K.; Kundzins, K.; Vilnis, K.; Azens, A.; Purans, J.

    2015-03-01

    Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range hopping changes to the non-thermally activated before iridium concentration reaches the 45 at.%.

  10. Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Mazur, Michal; Kaczmarek, Danuta; Prociow, Eugeniusz; Domaradzki, Jaroslaw; Wojcieszak, Damian; Bocheński, Jakub

    2014-06-01

    In this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10-2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

  11. Comparative study of RF reactive magnetron sputtering and sol-gel deposition of UV induced superhydrophilic TiOx thin films

    NASA Astrophysics Data System (ADS)

    Vrakatseli, V. E.; Amanatides, E.; Mataras, D.

    2016-03-01

    TiOx and TiOx-like thin films were deposited on PEEK (Polyether ether ketone) substrates by low-temperature RF reactive magnetron sputtering and the sol-gel method. The resulting films were compared in terms of their properties and photoinduced hydrophilicity. Both techniques resulted in uniform films with good adhesion that can be switched to superhydrophilic after exposure to UVA radiation for similar time periods. In addition, the sputtered films can also be activated and switched to superhydrophilic by natural sunlight due to the higher absorption in the visible spectrum compared to the sol-gel films. On the other hand, the as deposited sol-films remain relatively hydrophilic for a longer time in dark compared to the sputtered film due to the differences in the morphology and the porosity of the two materials. Thus, depending on the application, either method can be used in order to achieve the desirable TiOx properties.

  12. Correlation between optical characterization of the plasma in reactive magnetron sputtering deposition of Zr N on SS 316L and surface and mechanical properties of the deposited films

    NASA Astrophysics Data System (ADS)

    Fragiel, A.; Machorro, R.; Muñoz-Saldaña, J.; Salinas, J.; Cota, L.

    2008-05-01

    Optical and surface spectroscopies as well as nanoindentation techniques have been used to study ZrN coatings on 316L stainless steel obtained by DC-reactive magnetron sputtering. The deposit process was carried out using initial and working pressures of 10 -6 Torr and 10 -3 Torr, respectively. The experimental set-up for optical spectra acquisition was designed for the study in situ of the plasma in the deposition chamber. Auger spectroscopy, SEM and X-ray diffraction were used to characterize the coatings. Nanoindentation tests were carried out to measure the mechanical properties of the coating. Plasma characterization revealed the presence of CN molecules and Cr ions in the plasma. Surface spectroscopy results showed that ZrN, Zr 3N 4 and ZrC coexist in the coating. These results allowed the understanding of the mechanical behavior of the coatings, demonstrating the importance of the plasma characterization as a tool for tailoring the properties of hard coatings.

  13. Magnetron tuner has locking feature

    NASA Technical Reports Server (NTRS)

    Martucci, V. J.

    1969-01-01

    Magnetron tuning arrangement features a means of moving a tuning ring axially within an anode cavity by a system of reduction gears engaging a threaded tuning shaft of lead screw. The shaft positions the tuning ring for the desired magnetron output frequency, and a washer prevents backlash.

  14. Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

    SciTech Connect

    Schmidt, S.; Greczynski, G.; Jensen, J.; Hultman, L.; Czigany, Zs.

    2012-07-01

    Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies. Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

  15. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    SciTech Connect

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-12

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

  16. Spectroscopic ellipsometry and x-ray photoelectron spectroscopy of La{sub 2}O{sub 3} thin films deposited by reactive magnetron sputtering

    SciTech Connect

    Atuchin, V. V.; Kalinkin, A. V.; Kochubey, V. A.; Kruchinin, V. N.; Vemuri, R. S.; Ramana, C. V.

    2011-03-15

    Lanthanum oxide (La{sub 2}O{sub 3}) films were grown by the reactive dc magnetron sputtering and studied their structural, chemical and optical parameters. La{sub 2}O{sub 3} films were deposited onto Si substrates by sputtering La-metal in a reactive gas (Ar+O{sub 2}) mixture at a substrate temperature of 200 deg. C Reflection high-energy electron diffraction measurements confirm the amorphous state of La{sub 2}O{sub 3} films. Chemical analysis of the top-surface layers evaluated with x-ray photoelectron spectroscopy indicates the presence of a layer modified by hydroxylation due to interaction with atmosphere. Optical parameters of a-La{sub 2}O{sub 3} were determined with spectroscopic ellipsometry (SE). There is no optical absorption over spectral range {lambda}=250-1100 nm. Dispersion of refractive index of a-La{sub 2}O{sub 3} was defined by fitting of SE parameters over {lambda}=250-1100 nm.

  17. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO3 films grown by pulsed direct current magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.

    2014-03-01

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO3) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO2:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO3 films deposited on SnO2:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO3 film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10-3. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (Eo) of WO3 films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The Eo is change between 6.30 and 3.88 eV, while the Ed varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm-1 attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  18. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets

    SciTech Connect

    Tsai, T. K.; Chen, H. C.; Lee, J. H.; Huang, Y. Y.; Fang, J. S.

    2010-05-15

    Zn-doped In{sub 2}O{sub 3} film is frequently deposited from an oxide target; but the use of metallic target is increasingly expected as preparing the film with comparable properties. This work aimed to prepare a highly conductive and transparent Zn-doped In{sub 2}O{sub 3} thin film on Corning Eagle{sup 2000} glass substrate by magnetron cosputtering method using indium and zinc targets. Structural characterization was performed using x-ray diffraction and x-ray photoelectron spectroscopy. The film had an amorphous structure when the film was prepared on an unheated substrate, but had an In{sub 2}O{sub 3} polycrystalline structure when the film was deposited on 150 and 300 deg. C substrates. The electrical properties of the film were greatly affected by annealing; the Zn-doped In{sub 2}O{sub 3} film had a low resistivity of 6.1x10{sup -4} {Omega} cm and an average transmittance of 81.7% when the film was deposited without substrate heating and followed a 600 deg. C annealing.

  19. Energy fluxes in a radio-frequency magnetron discharge for the deposition of superhard cubic boron nitride coatings

    SciTech Connect

    Bornholdt, S.; Kersten, H.; Ye, J.; Ulrich, S.

    2012-12-15

    Energy flux measurements by a calorimetric probe in a rf-magnetron plasma used for the deposition of super-hard c-BN coatings are presented and discussed. Argon as working gas is used for sputtering a h-BN target. Adding a certain amount of N{sub 2} is essential for the formation of stoichiometric BN films, since a lack of nitrogen will lead to boron rich films. Subsequently, the contributions of different plasma species, surface reactions, and film growth to the resulting variation of the substrate temperature in dependence on nitrogen admixture are estimated and discussed. In addition, SRIM simulations are performed to estimate the energy influx by sputtered neutral atoms. The influence of magnetron target power and oxygen admixture (for comparison with nitrogen) to the process gas on the total energy flux is determined and discussed qualitatively, too. The results indicate that variation of the energy influx due to additional nitrogen flow, which causes a decrease of electron and ion densities, electron temperature and plasma potential, is negligible, while the admixture of oxygen leads to a drastic increase of the energy influx. The typical hysteresis effect which can be observed during magnetron sputtering in oxygen containing gas mixtures has also been confirmed in the energy influx measurements for the investigated system. However, the underlying mechanism is not understood yet, and will be addressed in further investigations.

  20. [Effects of Temperature on the Preparation of Al/Zn3N2 Thin Films Using Magnetron Reactive Sputtering].

    PubMed

    Feng, Jun-qin; Chen, Jun-fang

    2015-08-01

    The effects of substrate temperature on the plasma active species were investigated by plasma optical emission spectroscopy. With increasing substrate temperature, the characteristic spectroscopy intensity of the first positive series of N2* (B(3)Πg-->A(3)Σu(+)), the second positive N2* (C(3)Πu-->B(3)Πg), the first negative series N2(+)* (B(2)Σu(+)-->X(2)Σg(+)) and Zn* are increased. Due to the substrate temperature, each ion kinetic energy is increased and the collision ionization intensified in the chamber. That leading to plasma ion density increase. These phenomenons's show that the substrate temperature raises in a certain range was conducive to zinc nitride thin films growth. Zn3N2 thin films were prepared on Al films using ion sources-assisted magnetron sputtering deposition method. The degree of crystalline of the films was examined with X-ray diffraction (XRD). The results show that has a dominant peak located at 34.359° in room temperature, which was corresponding to the (321) plane of cubic anti-bixbyite zinc nitride structure (JCPDS Card No35-0762). When the substrate temperature was 100 °C, in addition to the (321) reflection, more diffraction peaks appeared corresponding to the (222), (400) and (600) planes, which were located at 31.756°, 36.620° and 56.612° respectively. When the substrate temperature was 200 °C, in addition to the (321), (222), (400) and (600) reflection, more new diffraction peaks also appeared corresponding to the (411), (332), (431) and (622) planes, which were located at 39.070, 43.179°, 47.004° and 62.561° respectively. These results show the film crystalline increased gradually with raise the substrate temperature. XP-1 profilometer were used to analyze the thickness of the Zn3N2 films. The Zn3N2 films deposited on Al films in mixture gas plasma had a deposition rate of 2.0, 2.2, and 2.7 nm · min(-1). These results indicate that the deposition rate was gradually enhanced as substrate temperature increased

  1. Photoelectrochemical properties of N/C-codoped TiO2 film electrodes prepared by reactive DC magnetron sputtering.

    PubMed

    Wu, Kee-Rong; Yeh, Chung-Wei; Hung, Chung-Hsuang; Chung, Chih-Yuan; Cheng, Li-Hsun

    2010-02-01

    This paper aims to characterize the photoelectrochemical properties of the visible-light enabling titanium dioxide (TiO2) film electrodes prepared by codoping nitrogen (N) and a presputtered carbon film (C-film) onto indium tin oxide (ITO) glass substrates using a direct current (DC) magnetron sputtering technique. To improve its photoelectrochemical properties, different amount of C-doping sources, 2 h and 4 h C-film, are chose to prepare the N/C-codoped TiO2 film electrodes. Under visible-light (420 < lambda < 610 nm) illumination, a remarkable photocurrent density of 22 microA/cm2 is obtained for the N/C-TiO2 film electrode prepared with a 4 h C-film (NC(4)-T) at an applied potential of +1.2 V versus SCE. Under ultraviolet (lambda approximately 365 nm) illumination, the NC(4)-T film electrode also exhibits the highest photocurrent density of 0.23 mA/cm2 among all samples tested. A more negative flat band potential of NC(4)-T film electrode is attributed to the synergistic effect of N/C codoping. The XRD spectrum of the NC(4)-T film electrode shows mainly the well-crystallized anatase TiO2 phase and an extremely intense (211) plane. Thus, photoelectrochemical activity of the NC(4)-T film electrode can be ascribed to the well-crystallized columnar crystals with pores at its grain boundary, open surface morphology, which are revealed by SEM and TEM images, and a more negative flat band potential. The visible-light induced activity is mostly enhanced as a result of the synergistic effects of N/C-codoping into the TiO2 crystals. A potential application to photocatalytic splitting of water for hydrogen evolution using solar light is practically possible. PMID:20352756

  2. Influence of working gas pressure on structure and properties of WO3 films reactively deposited by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Takahashi, T.; Tanabe, J.; Yamada, N.; Nakabayashi, H.

    2003-07-01

    Tungsten trioxide (WO3) films with thickness of 0.9-6.7 μm have been deposited on glass-slide substrates, using rf magnetron sputtering in an atmosphere of mixture 80% Ar and 20% O2. The as-deposited films had a dark metallic color, like the W target, at a working gas pressure PW of 1 mTorr. Yellow films resulted at a PW of 3 mTorr. With a further increase of PW, the film color changed to pale yellow. From the x-ray diffraction patterns, the as-deposited films were polycrystalline crystallizing in the monoclinic crystal structure with high c-axis orientation perpendicular to the film plane. The optical transmittance of the films deposited at a PW of 1 mTorr is nearly zero. However, the transmittance of the films deposited at other PW are larger than 70% in the wavelength, λ, ranging from 500 to 900 nm. With decreasing λ to 400 nm, the transmittance decreases steeply to zero. The λ at this absorption edge is longer than that in TiO2 and comes in the visible region. The surface morphology of the films depends on PW. This different morphology may be attributed to the effect of the substrate heating by plasma emission because of the high plasma density at higher PW. The morphology of the films may also depend on the crystallinity of the WO3 films. As PW increased, the surfaces of the films became rougher but the grain sizes of the films did not always become larger. The WO3 films deposited in this study may be used for the underlayer of TiO2 photocatalyst.

  3. Preparation of diamond-like carbon films using reactive Ar/CH4 high power impulse magnetron sputtering system with negative pulse voltage source for substrate

    NASA Astrophysics Data System (ADS)

    Kimura, Takashi; Kamata, Hikaru

    2016-04-01

    Diamond-like carbon films were prepared using a reactive Ar/CH4 high-power impulse magnetron sputtering system with a negative pulse voltage source for the substrate, changing the CH4 fraction up to 15% in the total pressure range from 0.3 to 2 Pa. The magnitude of the negative pulse voltage for the substrate was also varied up to about 500 V. The hardness of films monotonically increased with increasing magnitude of the negative pulse voltage. The films with hardnesses between 16.5 and 23 GPa were prepared at total pressures less than 0.5 Pa and CH4 fractions less than 10% by applying an appropriate negative pulse voltage of 300-400 V. In X-ray photoelectron spectroscopy, the area ratio C-C sp3/(C-C sp2 + C-C sp3) in the C 1s core level was higher than 30% at pressures less than 0.5 Pa and CH4 fractions less than 15%. On the other hand, the films with hardnesses between 5 and 10 GPa were prepared with a relatively high growth rate at the partial pressures of CH4 higher than 0.1 Pa. However, the observation of the photoluminescence background in Raman spectroscopy indicated a relatively high hydrogen content.

  4. Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Gall, D.; Petrov, I.; Desjardins, P.; Greene, J. E.

    1999-11-01

    ScN layers, 60-80 nm thick, were grown at 800 °C on 220-nm-thick epitaxial TiN(001) buffer layers on MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition in pure N2 discharges. The films are stoichiometric with N/Sc ratios, determined by Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy, of 1.00±0.02. Plan-view and cross-sectional transmission electron microscopy analyses showed that the films are single crystals which appear defect free up to a critical thickness of ≃15 nm, above which an array of nanopipes form with their tubular axis along the film growth direction and extending to the free surface. The nanopipes are rectangular in cross section with areas of ≃1.5×5 nm2 and are self-organized along <100>, directions with an average separation of ≃40 nm. Their formation is the result of periodic kinetic surface roughening which leads to atomic self-shadowing and, under limited adatom mobility conditions, to deep cusps which are the origin of the nanopipes. The ScN layers are nearly relaxed, as determined from x-ray diffraction θ-2θ scans in both reflection and transmission, with only a small residual compressive strain due to differential thermal contraction. The Poisson ratio of ScN was found to be 0.20±0.04, in good agreement with ab initio calculations.

  5. On the phase formation of titanium oxide thin films deposited by reactive DC magnetron sputtering: influence of oxygen partial pressure and nitrogen doping

    NASA Astrophysics Data System (ADS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Rajagopalan, S.; Kamruddin, M.; Tyagi, A. K.

    2014-09-01

    This work describes about the control on phase formation in titanium oxide thin films deposited by reactive dc magnetron sputtering. Various phases of titanium oxide thin films were deposited by controlling the oxygen partial pressure during the sputtering process. By adding nitrogen gas to sputter gas mixture of oxygen and argon, the oxygen partial pressure was decreased further below the usual critical value, below and above which the sputtering yields metallic and oxide films, respectively. Furthermore, nitrogen addition eliminated the typical hysteretic behaviour between the flow rate and oxygen partial pressure, and significantly influenced the sputter rate. On increasing the oxygen partial pressure, the ratio between anatase and rutile fraction and grain size increases. The fracture cross-sectional scanning electron microscopy together with the complementary information from X-ray diffraction and micro-Raman investigations revealed the evolution and spatial distribution of the anatase and rutile phases. Both the energy delivered to the growing film and oxygen vacancy concentrations are correlated with the formation of various phases upon varying the oxygen partial pressure.

  6. Effect of annealing treatment on the photocatalytic activity of TiO2 thin films deposited by dc reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Arias, L. M. Franco; Arias Duran, A.; Cardona, D.; Camps, E.; Gómez, M. E.; Zambrano, G.

    2015-07-01

    Titanium dioxide (TiO2) thin films have been deposited by DC reactive magnetron sputtering on silicon and quartz substrates with different Ar/O2 ratios in the gas mixture. Substrate temperature was kept constant at 400 °C during the deposition process, and the TiO2 thin films were later annealed at 700 °C for 3 h. The effect of the Ar/O2 ratio in the gas flow and the annealing treatment on the phase composition, deposition rate, crystallinity, surface morphology and the resulting photocatalytic properties were investigated. For photocatalytic measurements, the variation of the concentration of the methylene blue (MB) dye under UV irradiation was followed by a change in the intensity of the characteristic MB band in the UV- Vis transmittance spectra. We report here that the as-grown TiO2 films showed only the anatase phase, whereas after annealing, the samples exhibited both the anatase and rutile phases in proportions that varied with the Ar/O2 ratio in the mixture of gases used during growth. In particular, the annealed TiO2 thin film deposited at a 50/50 ratio of Ar/O2, composed of both anatase (80%) and rutile phases (20%), exhibited the highest photocatalytic activity (30% of MB degradation) compared with the samples without annealing and composed of only the anatase phase.

  7. Influence of film thickness on the morphological and electrical properties of epitaxial TiC films deposited by reactive magnetron sputtering on MgO substrates

    NASA Astrophysics Data System (ADS)

    Zoita, N. C.; Braic, V.; Danila, M.; Vlaicu, A. M.; Logofatu, C.; Grigorescu, C. E. A.; Braic, M.

    2014-03-01

    Epitaxial TiC films were deposited on MgO (001) by DC magnetron sputtering in a reactive atmosphere of Ar and CH4 at 800 °C. The films elemental composition and chemical bonding was investigated by Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy. The crystallographic structure, investigated by X-ray diffraction, exhibited an increased degree of (001) orientation with the film thickness, with a cube-on-cube epitaxial relationship with the substrate. The films morphology and electrical properties were determined by atomic force microscopy (AFM) and Hall measurements in Van der Pauw geometry. The influences of the film thickness (57-545 nm) on the morphological and electrical properties were investigated. The thinnest film presented the lowest resistivity, ~160 μΩ cm, showing an atomically flat surface, while higher values were obtained for the thicker films, explained by their different morphology dominated by low aspect ratio nanoislands/nanocolumns.

  8. Effect of Aluminum concentration on structural and optical properties of DC reactive magnetron sputtered Zinc Aluminum Oxide thin films for transparent electrode applications

    NASA Astrophysics Data System (ADS)

    Kumar, B. Rajesh; Subba Rao, T.

    2012-11-01

    Zinc Aluminum Oxide(ZAO) thin films were deposited on glass substrates by DC reactive magnetron sputtering in an Ar+O2 gas mixture using commercial available Zn metal (99.99% purity) and Al (99.99% purity) targets of 2 inch diameter and 4 mm thickness. The films were characterized and the effect of aluminum (Al) concentration (2 at %-6 at %) on the structural and optical properties was studied. The average crystallite size obtained from Scherer formula is in the range of 32-44nm. Microstructural analysis using Scanning Electron Microscope (SEM) supplemented with EDS is carried out to find the grain size as well as to find the composition elemental data of prepared thin films. Optical study is performed to calculate the extinction coefficient (k), absorption coefficient (a), optical band gap (Eg) using transmission spectra obtained using UV-VIS-NIR spectrophotometer. There was widening of optical band gap with increasing aluminum concentration. ZAO film with low resistivity 3.2 × 10-4 cm and high transmittance of 80% is obtained for 3at% doped Al which is crucial for optoelectronic applications.

  9. Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition

    NASA Astrophysics Data System (ADS)

    Mei, A. B.; Wilson, R. B.; Li, D.; Cahill, David G.; Rockett, A.; Birch, J.; Hultman, L.; Greene, J. E.; Petrov, I.

    2014-06-01

    Elastic constants are determined for single-crystal stoichiometric NaCl-structure VN(001), VN(011), and VN(111) epitaxial layers grown by magnetically unbalanced reactive magnetron sputter deposition on 001-, 011-, and 111-oriented MgO substrates at 430 °C. The relaxed lattice parameter ao = 0.4134 ± 0.0004 nm, obtained from high-resolution reciprocal space maps, and the mass density ρ = 6.1 g/cm3, determined from the combination of Rutherford backscattering spectroscopy and film thickness measurements, of the VN layers are both in good agreement with reported values for bulk crystals. Sub-picosecond ultrasonic optical pump/probe techniques are used to generate and detect VN longitudinal sound waves with measured velocities v001 = 9.8 ± 0.3, v011 = 9.1 ± 0.3, and v111 = 9.1 ± 0.3 km/s. The VN c11 elastic constant is determined from the sound wave velocity measurements as 585 ± 30 GPa; the c44 elastic constant, 126 ± 3 GPa, is obtained from surface acoustic wave measurements. From the combination of c11, c44, vhkl, and ρ we obtain the VN c12 elastic constant 178 ± 33 GPa, the VN elastic anisotropy A = 0.62, the isotropic Poisson ratio ν = 0.29, and the anisotropic Poisson ratios ν001 = 0.23, ν011 = 0.30, and ν111 = 0.29.

  10. Understanding of gas phase deposition of reactive magnetron sputtered TiO2 thin films and its correlation with bactericidal efficiency

    NASA Astrophysics Data System (ADS)

    Panda, A. B.; Mahapatra, S. K.; Barhai, P. K.; Das, A. K.; Banerjee, I.

    2012-10-01

    Nanostructured TiO2 thin films were deposited using RF reactive magnetron sputtering at different O2 flow rates (20, 30, 50 and 60 sccm) and constant RF power of 200 W. In situ investigation of the nucleation and growth of the films was made by Optical Emission Spectroscopy (OES). The nano amorphous nature as revealed from X-ray diffraction (XRD) of the as deposited films and abundance of the Ti3+ surface oxidation states and surface hydroxyl group (OH-) in the films deposited at 50 sccm as determined from X-ray photo electron spectroscopy (XPS) was explained on the basis of emission spectra studies. The increase in band gap and decrease in particle size with O2 flow rate was observed from transmission spectra of UV-vis spectroscopy. Photoinduced hydrophilicity has been studied using Optical Contact Angle (OCA) measurement. The post irradiated films showed improved hydrophilicity. The bactericidal efficiency of these films was investigated taking Escherichia coli as model bacteria. The films deposited at 50 sccm shows better bactericidal activity as revealed from the optical density (OD) measurement. The qualitative analysis of the bactericidal efficiency was depicted from Scanning Electron Microscope images. A correlation between bactericidal efficiency and the deposited film has been established and explained on the basis of nucleation growth, band gap and hydrophilicity of the films.

  11. Effect of film thickness on structural and mechanical properties of AlCrN nanocompoite thin films deposited by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Prakash, Ravi; Kaur, Davinder

    2016-05-01

    In this study, the influence of film thickness on the structural, surface morphology and mechanical properties of Aluminum chromium nitride (AlCrN) thin films has been successfully investigated. The AlCrN thin films were deposited on silicon (100) substrate using dc magnetron reactive co-sputtering at substrate temperature 400° C. The structural, surface morphology and mechanical properties were studied using X-ray diffraction, field-emission scanning electron microscopy and nanoindentation techniques respectively. The thickness of these thin films was controlled by varying the deposition time therefore increase in deposition time led to increase in film thickness. X-ray diffraction pattern of AlCrN thin films with different deposition time shows the presence of (100) and (200) orientations. The crystallite size varies in the range from 12.5 nm to 36.3 nm with the film thickness due to surface energy minimization with the higher film thickness. The hardness pattern of these AlCrN thin films follows Hall-Petch relation. The highest hardness 23.08 Gpa and young modulus 215.31 Gpa were achieved at lowest grain size of 12.5 nm.

  12. Transmission photocathodes based on stainless steel mesh and quartz glass coated with N-doped DLC thin films prepared by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Arbet, J.

    2016-03-01

    The influence was investigated of N-doped diamond-like carbon (DLC) films properties on the quantum efficiency of a prepared transmission photocathode. N-doped DLC thin films were deposited on a silicon substrate, a stainless steel mesh and quartz glass (coated with 5 nm thick Cr adhesion film) by reactive magnetron sputtering using a carbon target and gas mixture Ar, 90%N2+10%H2. The elements' concentration in the films was determined by RBS and ERD. The quantum efficiency was calculated from the measured laser energy and the measured cathode charge. For the study of the vectorial photoelectric effect, the quartz type photocathode was irradiated by intensive laser pulses to form pin-holes in the DLC film. The quantum efficiency (QE), calculated at a laser energy of 0.4 mJ, rose as the nitrogen concentration in the DLC films was increased and rose dramatically after the micron-size perforation in the quartz type photocathodes.

  13. Effect Of Process Gas Mixture On Reactively DC Magnetron Sputtered (Al1_xSix)OyNz Thin Films

    NASA Astrophysics Data System (ADS)

    Bjornard, Erik

    1989-02-01

    (A1 1-x Si x )0yNz films have properties which make them desirable as durable overcoats and corrosion barriers in optical thin film structures. (Al, Si )O N films were reactively DC sputtered from Al, Si targets (x = 0.0, 0.117, 0.30) in Ar/N2/O2 atmospheres. Nitride films had sputter efficiencies three times that of the oxides and ESCA analysis of the films showed that the film composition varied non-linearly with reactive gas ratio and sputter rate, incorporating more oxygen than nitrogen for a given gas flow. This behavior is correlated with the hysteresis curves for the oxide and nitride states. Optical properties of the films were also found to vary with index dropping disproportionately to the 0/(0+N) flow ratio, but linearly with the ratio of atomic percent of 0 and N in the films. Durability properties of (A1 1_x Si x)0 NZ films were tested at several compositions. It was found that with high nitrogen context the wear resistance increased with Si content and the oxides were generally less wear resistant than the nitrides. The corrosion resistance also increased with Si content, but in this case, the oxides were generally more stable. Film stress became more compressive with 0 and Si content. Analysis of ESCA binding energy data indicates that the Si forms alumino-silicate bonds in the film, which apparently contributes to the durability properties.

  14. Potential for reactive pulsed-dc magnetron sputtering of nanocomposite VO{sub x} microbolometer thin films

    SciTech Connect

    Jin, Yao O. Ozcelik, Adem; Horn, Mark W.; Jackson, Thomas N.

    2014-11-01

    Vanadium oxide (VO{sub x}) thin films were deposited by reactive pulsed-dc sputtering a metallic vanadium target in argon/oxygen mixtures with substrate bias. Hysteretic oxidation of the vanadium target surface was assessed by measuring the average cathode current during deposition. Nonuniform oxidization of the target surface was analyzed by Raman spectroscopy. The VO{sub x} film deposition rate, resistivity, and temperature coefficient of resistance were correlated to oxygen to argon ratio, processing pressure, target-to-substrate distance, and oxygen inlet positions. To deposit VO{sub x} in the resistivity range of 0.1–10 Ω-cm with good uniformity and process control, lower processing pressure, larger target-to-substrate distance, and oxygen inlet near the substrate are useful.

  15. High rate reactive magnetron sputter deposition of Al-doped ZnO with unipolar pulsing and impedance control system

    SciTech Connect

    Nishi, Yasutaka; Hirohata, Kento; Tsukamoto, Naoki; Sato, Yasushi; Oka, Nobuto; Shigesato, Yuzo

    2010-07-15

    Al-doped ZnO (AZO) films were deposited on quartz glass substrates, unheated and heated to 200 deg. C, using reactive sputtering with a special feedback system of discharge impedance combined with midfrequency pulsing. A planar Zn-Al alloy target was connected to the switching unit, which was operated in a unipolar pulse mode. The oxidation of the target surface was precisely controlled by a feedback system for the entire O{sub 2} flow ratio including ''the transition region''. The deposition rate was about 10-20 times higher than that for films deposited by conventional sputtering using an oxide target. A deposition rate of AZO films of 390 nm/min with a resistivity of 3.8x10{sup -4} {Omega} cm and a transmittance in the visible region of 85% was obtained when the films were deposited on glass substrates heated to 200 deg. C with a discharge power of 4 kW.

  16. Pulsing frequency induced change in optical constants and dispersion energy parameters of WO{sub 3} films grown by pulsed direct current magnetron sputtering

    SciTech Connect

    Punitha, K.; Sivakumar, R.; Sanjeeviraja, C.

    2014-03-21

    In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO{sub 3}) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO{sub 2}:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO{sub 3} films deposited on SnO{sub 2}:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO{sub 3} film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10{sup −3}. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (E{sub d}) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (E{sub o}) of WO{sub 3} films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The E{sub o} is change between 6.30 and 3.88 eV, while the E{sub d} varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm{sup −1} attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  17. Structural properties and preparation of Si-rich Si1-xCx thin films by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    He, Yisong; Ye, Chao; Wang, Xiangying; Gao, Mingwei; Guo, Jiaming; Yang, Peifang

    2016-02-01

    Si-rich silicon carbide (Si1-xCx) thin films were prepared by radio-frequency (2 MHz, 13.56 MHz and 27.12 MHz) magnetron sputtering. Their structural properties were investigated by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and atomic force microscopy (AFM). The effect of ions energy on films deposition was also analyzed by retarding field energy analyzer. The results show that the films compositions are related to the energy of ions impacting the SiC target. At the lower sputtering power, Si-rich Si1-xCx (1-x = 0.57-0.90) thin films can be well deposited.

  18. Influences of CuO phase on electrical and optical performance of Cu2O films prepared by middle frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Guo, Li; Zhao, Ming; Zhuang, Da-Ming; Cao, MingJie; Ouyang, Liangqi; Li, Xiaolong; Sun, Rujun; Gao, Zedong

    2015-12-01

    In the work, Cu2O films were prepared by middle frequency (mf) magnetron sputtering and subsequent anneals. CuO phase has been detected in a few Cu2O samples and its influences have been examined. The results show that the CuO phase can lead to a decrease of Hall mobility and change the surface morphology of the Cu2O films. The highest hall mobility of 43 cm2 V-1 s-1 with the optical band gaps of about 2.5 eV has been achieved in the Cu2O films where CuO is absent, which demonstrates the potential to fabricate high field-effected mobility Cu2O-based devices through this method.

  19. Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2 thin films deposited with different oxygen partial pressures.

    PubMed

    Maidul Haque, S; Nayak, C; Bhattacharyya, Dibyendu; Jha, S N; Sahoo, N K

    2016-03-20

    Two sets of HfO2 thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3 edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites. PMID:27140550

  20. Synthesis of bamboo-leaf-shaped ZnO nanostructures by oxidation of Zn/SiO 2 composite films deposited with radio frequency magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Liwei; Li, Yuguo; Xue, Chengshan; Zhuang, Huizhao; He, Jianting; Tian, Dengheng

    2006-02-01

    Bamboo-leaf-shaped ZnO nanostructures were synthesized by oxidation of metal Zn/SiO 2 matrix composite thin films deposited on Si(1 1 1) substrates with radio frequency magnetron co-sputtering. The synthesized bamboo-leaf-shaped ZnO are single crystalline in nature with widths ranging from 30 to 60 nm and lengths of up to 5-10 μm, room temperature photoluminescence spectrum of the nanostructures shows a strong and sharp UV emission band at 372 nm and a weak and broad green emission band at about 520 nm which indicates relatively excellent crystallization and optical quality of the ZnO nanostructures synthesized by this novel method.

  1. Heteroepitaxial growth of Cu{sub 2}ZnSnS{sub 4} thin film on sapphire substrate by radio frequency magnetron sputtering

    SciTech Connect

    Song, Ning E-mail: n.song@student.unsw.edu.au; Huang, Yidan; Li, Wei; Huang, Shujuan; Hao, Xiaojing E-mail: n.song@student.unsw.edu.au; Wang, Yu; Hu, Yicong

    2014-03-03

    The heteroepitaxy of tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates is successfully obtained by radio frequency magnetron sputtering. The sputtered CZTS film has a mirror-like smooth surface with a root mean square roughness of about 5.44 nm. X-ray θ-2θ scans confirm that CZTS film is (112) oriented on sapphire with an out of plane arrangement of CZTS (112) ‖ sapphire (0001). X-ray Phi scan further illustrates an in plane ordering of CZTS [201{sup ¯}] ‖ sapphire [21{sup ¯}1{sup ¯}0]. The high resolution transmission electron microscopy image of the interface region clearly shows that the CZTS thin film epitaxially grows on the sapphire (0001) substrate. The band gap of the film is found to be approximately 1.51 eV.

  2. Investigation of induced recrystallization and stress in close-spaced sublimated and radio-frequency magnetron sputtered CdTe thin films

    SciTech Connect

    Moutinho, H.R.; Dhere, R.G.; Al-Jassim, M.M.; Levi, D.H.; Kazmerski, L.L.

    1999-07-01

    We have induced recrystallization of small grain CdTe thin films deposited at low temperatures by close-spaced sublimation (CSS), using a standard CdCl{sub 2} annealing treatment. We also studied the changes in the physical properties of CdTe films deposited by radio-frequency magnetron sputtering after the same post-deposition processing. We demonstrated that the effects of CdCl{sub 2} on the physical properties of CdTe films are similar, and independent of the deposition method. The recrystallization process is linked directly to the grain size and stress in the films. These studies indicated the feasibility of using lower-temperature processes in fabricating efficient CSS CdTe solar cells. We believe that, after the optimization of the parameters of the chemical treatment, these films can attain a quality similar to CSS films grown using current standard conditions. {copyright} {ital 1999 American Vacuum Society.}

  3. In-situ post-annealing technique for improving piezoelectricity and ferroelectricity of Li-doped ZnO thin films prepared by radio frequency magnetron sputtering system

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Cheng; Chang, Chia-Chiang; Wu, Chin-Jyi; Tseng, Zong-Liang; Tang, Jian-Fu; Chu, Sheng-Yuan; Chen, Yi-Chun; Qi, Xiaoding

    2013-03-01

    Li-doped zinc oxide (L0.03Z0.97O) thin films are deposited onto Pt/Ti/SiO2/Si substrates via the radio frequency magnetron sputtering method. The structure evolution with annealing temperature of the predominantly (002)-oriented Li-doped ZnO (LZO) films after in-situ post-annealing process is determined. The largest values of the piezoelectric coefficient (d33) and the remnant polarization (Pr) (22.85 pm/V and 0.655 μC/cm2, respectively) are obtained for LZO films post-annealed at 600 °C, which can be attributed to the predominant (002)-oriented crystalline structure, the release of intrinsic residual compressive stress, and less non-lattice oxygen.

  4. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy.

    PubMed

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-29

    Catalystless growth of InxAl(1-x)N core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl(1-x)N nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl(1-x)N film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl(1-x)N is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl(1-x)N[0001]//Si[111] and InxAl(1-x)N[1120]//Si[110 by removing the native SiOx layer from the substrate. PMID:25944838

  5. Morphology and structure evolution of Cu(In,Ga)S{sub 2} films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance

    SciTech Connect

    Nie, Man Ellmer, Klaus

    2014-02-28

    Cu(In,Ga)S{sub 2} (CIGS) films were deposited on Mo coated soda lime glass substrates using an electron cyclotron resonance plasma enhanced one-step reactive magnetron co-sputtering process (ECR-RMS). The crystalline quality and the morphology of the Cu(In,Ga)S{sub 2} films were investigated by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and X-ray fluorescence. We also compared these CIGS films with films previously prepared without ECR assistance and find that the crystallinity of the CIGS films is correlated with the roughness evolution during deposition. Atomic force microscopy was used to measure the surface topography and to derive one-dimensional power spectral densities (1DPSD). All 1DPSD spectra of CIGS films exhibit no characteristic peak which is typical for the scaling of a self-affine surface. The growth exponent β, characterizing the roughness R{sub q} evolution during the film growth as R{sub q} ∼ d{sup β}, changes with film thickness. The root-mean-square roughness at low temperatures increases only slightly with a growth exponent β = 0.013 in the initial growth stage, while R{sub q} increases with a much higher exponent β = 0.584 when the film thickness is larger than about 270 nm. Additionally, we found that the H{sub 2}S content of the sputtering atmosphere and the Cu- to-(In + Ga) ratio has a strong influence of the morphology of the CIGS films in this one-step ECR-RMS process.

  6. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Serban, Elena Alexandra; Åke Persson, Per Ola; Poenaru, Iuliana; Junaid, Muhammad; Hultman, Lars; Birch, Jens; Hsiao, Ching-Lien

    2015-05-01

    Catalystless growth of InxAl1-xN core-shell nanorods have been realized by reactive magnetron sputter epitaxy onto Si(111) substrates. The samples were characterized by scanning electron microscopy, x-ray diffraction, scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. The composition and morphology of InxAl1-xN nanorods are found to be strongly influenced by the growth temperature. At lower temperatures, the grown materials form well-separated and uniform core-shell nanorods with high In-content cores, while a deposition at higher temperature leads to the formation of an Al-rich InxAl1-xN film with vertical domains of low In-content as a result of merging Al-rich shells. The thickness and In content of the cores (domains) increase with decreasing growth temperature. The growth of the InxAl1-xN is traced to the initial stage, showing that the formation of the core-shell nanostructures starts very close to the interface. Phase separation due to spinodal decomposition is suggested as the origin of the resultant structures. Moreover, the in-plane crystallographic relationship of the nanorods and substrate was modified from a fiber textured to an epitaxial growth with an epitaxial relationship of InxAl1-xN[0001]//Si[111] and InxAl1-xN[11\\bar{2}0]//Si[1\\bar{1}0] by removing the native SiOx layer from the substrate.

  7. The effect of increasing V content on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N films deposited by DC reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Fernandes, F.; Loureiro, A.; Polcar, T.; Cavaleiro, A.

    2014-01-01

    In the last years, vanadium rich films have been introduced as possible candidates for self-lubrication at high temperatures, based on the formation of V2O5 oxide. The aim of this investigation was to study the effect of V additions on the structure, mechanical properties and oxidation resistance of Ti-Si-V-N coatings deposited by DC reactive magnetron sputtering. The results achieved for TiSiVN films were compared and discussed in relation to TiN and TiSiN films prepared as reference. All coatings presented a fcc NaCl-type structure. A shift of the diffraction peaks to higher angles with increasing Si and V contents suggested the formation of a substitutional solid solution in TiN phase. Hardness and Young's modulus of the coatings were similar regardless on V content. The onset of oxidation of the films decreased significantly to 500 °C when V was added into the films; this behaviour was independent of the Si and V contents. The thermogravimetric isothermal curves of TiSiVN coatings oxidized at temperatures below the melting point of α-V2O5 (∼685 °C) showed two stages: at an early stage, the weight increase over time is linear, whilst, in the second stage, a parabolic evolution can be fitted to the experimental data. At higher temperatures only a parabolic evolution was fitted. α-V2O5 was the main phase detected at the oxidized surface of the coatings. Reduction of α-V2O5 to β-V2O5 phase occurred for temperatures above its melting point.

  8. Mechanical, tribological, and electrochemical behavior of Cr 1- xAl xN coatings deposited by r.f. reactive magnetron co-sputtering method

    NASA Astrophysics Data System (ADS)

    Sanchéz, J. E.; Sanchéz, O. M.; Ipaz, L.; Aperador, W.; Caicedo, J. C.; Amaya, C.; Landaverde, M. A. Hernández; Beltran, F. Espinoza; Muñoz-Saldaña, J.; Zambrano, G.

    2010-02-01

    Chromium aluminum nitride (Cr 1- xAl xN) coatings were deposited onto AISI H13 steel and silicon substrates by r.f. reactive magnetron co-sputtering in (Ar/N 2) gas mixture from chromium and aluminum targets. Properties of deposited Cr 1- xAl xN coatings such as compositional, structural, morphological, electrochemical, mechanical and tribological, were investigated as functions of aluminum content. X-ray diffraction patterns of Cr 1- xAl xN coatings with different atomic concentrations of aluminum (0.51 < x < 0.69) showed the presence and evolution of (1 1 1), (2 0 0), and (1 0 2) crystallographic orientations associated to the Cr 1- xAl xN cubic and w-AlN phases, respectively. The rate of corrosion of the steel coated with Cr 1- xAl xN varied with the applied power; however, always being clearly lower when compared to the uncoated substrate. The behavior of the protective effect of the Cr 1- xAl xN coatings is based on the substitution of Cr for Al, when the power applied to the aluminum target increases. The mechanical properties were also sensitive to the power applied, leading to a maximum in hardness and a reduced elastic modulus of 30 and 303 GPa at 350 W and a monotonic decrease to 11 and 212 GPa at 450 W, respectively. Finally, the friction coefficient measured by pin-on disk revealed values between 0.45 and 0.70 in humid atmosphere.

  9. Effect of oxygen incorporation on structural and properties of Ti-Si-N nanocomposite coatings deposited by reactive unbalanced magnetron sputtering

    SciTech Connect

    Ding, X.Z.; Zeng, X.T.; Liu, Y.C.; Zhao, L.R.

    2006-07-15

    Ti-Si-N-O nanocomposite coatings with different contents of oxygen were deposited by a combined dc/rf reactive unbalanced magnetron sputtering process in an Ar+N{sub 2}+O{sub 2} mixture atmosphere. The composition, structure, mechanical, and tribological properties of the as-deposited coatings were analyzed by energy dispersive analysis of x-rays, x-ray diffraction (XRD), nanoindentation, and pin-on-disk tribometer experiments, respectively. It was found that in the range of lower oxygen content with atomic ratio of O/N{<=}0.72, the tribological properties of the Ti-Si-N-O coatings are evidently improved, in comparison with the coating without oxygen incorporation. At O/N=0.72, the friction coefficient and wear rate of the as-deposited coatings are reduced to 20% and 45%, respectively. Meanwhile, however, their hardness was not reduced, but, on the contrary, slightly increased. With increasing oxygen content further to O/N{>=}0.72, coating hardness decreased significantly. The friction coefficient of the as-deposited coatings decreased monotonously with the increase of oxygen content in the whole composition range investigated. The wear rate of the coatings exhibited a minimum value at around O/N=0.72. In the lower range of O/N, wear rate decreased significantly due to the lubricant effect of oxygen incorporation, while in the higher range of O/N, wear rate increased gradually due to the weakening of coating hardness. XRD patterns revealed that the as-deposited coatings were mainly crystallized in cubic TiN phase, accompanied with minority of rutile structure titania in the case of higher oxygen incorporation.

  10. Relationship between the physical and structural properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering

    SciTech Connect

    Sanjines, R.; Benkahoul, M.; Sandu, C.S.; Schmid, P.E.; Levy, F.

    2005-12-15

    The optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} thin films deposited by dc reactive magnetron sputtering have been investigated as a function of the Si content (C{sub Si}). Optical properties were studied by both specular reflectivity and spectroscopic ellipsometry. Electrical resistivity was measured by the van der Pauw method at room temperature and as a function of the temperature down to 10 K. Both the optical and electrical properties of Nb{sub z}Si{sub y}N{sub x} films are closely related with the chemical composition and microstructure evolution caused by Si addition. For C{sub Si} up to 4 at. % the Si atoms are soluble in the lattice of the NbN crystallites. In this compositional regime, the optical and electrical properties show little dependence on the Si content. Between 4 and 7 at. % the surplus of Si atoms segregates at the grain boundaries, builds an insulating SiN{sub x} layer, and originates important modifications in the optical and electrical properties of these films. Further increase of C{sub Si} leads to the formation of nanocomposite structures. The electrical properties of these films are well described by the grain-boundary scattering model with low probability for electrons to cross the grain boundary. The appearance of the intragranular-insulating SiN{sub x} layer and the reduction of the grain size are noticed in the dielectric function mainly as a strong damping of the plasma oscillation.

  11. Effects of substrate bias on the preferred orientation, phase transition and mechanical properties for NbN films grown by direct current reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wen, M.; Hu, C. Q.; Wang, C.; An, T.; Su, Y. D.; Meng, Q. N.; Zheng, W. T.

    2008-07-01

    NbN films are deposited using direct current reactive magnetron sputtering in discharge of a mixture of N2 and Ar gas, and the effects of substrate bias (Vb) on the preferred orientation, phase transition, and mechanical properties for NbN films are explored by x-ray diffraction, selective area electron diffraction, and nanoindentation measurements. It is found that Vb has a significant influence on the stress in NbN films, leading to a pronounced change in the preferred orientation, phase structure, and hardness. As the substrate is at voltage floating, the stress is tensile. In contrast, as negative Vb is applied, the stress becomes compressive, and increases with increasing the absolute value of negative Vb. It is observed that a phase transition from δ (face-centered cubic) to δ' (hexagonal) for NbN films occurs as Vb is in the range of -80to-120V, which can be attributed to a decrease in the strain energy for NbN films. In order to explore the relationship between the stress and phase transition as well as preferred orientation, density-functional theory based on first principles is used to calculate the elastic constants and shear modulus for NbN with a structure of δ or δ'. The calculated results show that the shear modulus for δ'-NbN is larger than that for δ-NbN, whereas the bulk modulus for δ'-NbN is almost equal to that for δ-NbN, resulting in a difference in hardness for δ- or δ'-NbN single crystal.

  12. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  13. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    NASA Astrophysics Data System (ADS)

    Alireza, Samavati; K. Ghoshal, S.; Othaman, Z.

    2012-04-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  14. Radio frequency magnetron sputtering of Li7La3Zr2O12 thin films for solid-state batteries

    NASA Astrophysics Data System (ADS)

    Lobe, S.; Dellen, C.; Finsterbusch, M.; Gehrke, H.-G.; Sebold, D.; Tsai, C.-L.; Uhlenbruck, S.; Guillon, O.

    2016-03-01

    Thin film batteries based on solid electrolytes having a garnet-structure like Li7La3Zr2O12 (LLZ) are considered as one option for safer batteries with increased power density. In this work we show the deposition of Ta- and Al-substituted LLZ thin films on stainless steel substrates by r.f. magnetron sputtering. The thin films were characterized by XRD, SEM and time-of-flight-secondary ion mass spectrometry (ToF-SIMS) to determine crystal structure, morphology and element distribution. The substrate temperature was identified to be one important parameter for the formation of cubic garnet-structured LLZ thin films. LLZ formation starts at around 650 °C. Single phase cubic thin films were obtained at substrate temperatures of 700 °C and higher. At these temperatures an interlayer is formed. Combination of SEM, ToF-SIMS and XRD indicated that this layer consists of γ-LiAlO2. The combined total ionic conductivity of the γ-LiAlO2 interlayer and the LLZ thin film (perpendicular to the plane) was determined to be 2.0 × 10-9 S cm-1 for the sample deposited at 700 °C. In-plane measurements showed a room temperature conductivity of 1.2 × 10-4 S cm-1 with an activation energy of 0.47 eV for the LLZ thin film.

  15. Submicrometer Hollow Bioglass Cones Deposited by Radio Frequency Magnetron Sputtering: Formation Mechanism, Properties, and Prospective Biomedical Applications.

    PubMed

    Popa, A C; Stan, G E; Besleaga, C; Ion, L; Maraloiu, V A; Tulyaganov, D U; Ferreira, J M F

    2016-02-01

    This work reports on the unprecedented magnetron sputtering deposition of submicrometric hollow cones of bioactive glass at low temperature in the absence of any template or catalyst. The influence of sputtering conditions on the formation and development of bioglass cones was studied. It was shown that larger populations of well-developed cones could be achieved by increasing the argon sputtering pressure. A mechanism describing the growth of bioglass hollow cones is presented, offering the links for process control and reproducibility of the cone features. The composition, structure, and morphology of the as-synthesized hollow cones were investigated by energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), grazing incidence geometry X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM)-selected area electron diffraction (SAED). The in vitro biological performance, assessed by degradation tests (ISO 10993-14) and cytocompatibility assays (ISO 10993-5) in endothelial cell cultures, was excellent. This allied with resorbability and the unique morphological features make the submicrometer hollow cones interesting candidate material devices for focal transitory permeabilization of the blood-brain barrier in the treatment of carcinoma and neurodegenerative disorders. PMID:26836256

  16. Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Perumal, R.; Hassan, Z.

    2016-06-01

    Zinc oxide receives remarkable attention due to its several attractive physical properties. Zinc oxide thin films doped with nitrogen were grown by employing RF magnetron sputtering method at room temperature. Doping was accomplished in gaseous medium by mixing high purity nitrogen gas along with argon sputtering gas. Structural studies confirmed the high crystalline nature with c-axis oriented growth of the nitrogen doped zinc oxide thin films. The tensile strain was developed due to the incorporation of the nitrogen into the ZnO crystal lattice. Surface roughness of the grown films was found to be decreased with increasing doping level was identified through atomic force microscope analysis. The presenting phonon modes of each film were confirmed through FTIR spectral analysis. The increasing doping level leads towards red-shifting of the cut-off wavelength due to decrement of the band gap was identified through UV-vis spectroscopy. All the doped films exhibited p-type conductivity was ascertained using Hall measurements and the obtained results were presented.

  17. Optical constants and dispersion energy parameters of NiO thin films prepared by radio frequency magnetron sputtering technique

    NASA Astrophysics Data System (ADS)

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2013-09-01

    In this paper, we report on rf power induced change in the structural and optical properties of nickel oxide (NiO) thin films deposited onto glass substrates by rf magnetron sputtering technique. The crystallinity of the film was found to increase with increasing rf power and the deposited film belong to cubic phase. The maximum optical transmittance of 95% was observed for the film deposited at 100 W. The slight shift in transmission threshold towards higher wavelength region with increasing rf power revealed the systematic reduction in optical energy band gap (3.93 to 3.12 eV) of the films. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion parameters, dielectric constants, relaxation time, and optical non-linear susceptibility were evaluated. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena.

  18. Dynamics of reactive high-power impulse magnetron sputtering discharge studied by time- and space-resolved optical emission spectroscopy and fast imaging

    SciTech Connect

    Hala, M.; Viau, N.; Zabeida, O.; Klemberg-Sapieha, J. E.; Martinu, L.

    2010-02-15

    Time- and space-resolved optical emission spectroscopy and fast imaging were used for the investigation of the plasma dynamics of high-power impulse magnetron sputtering discharges. 200 {mu}s pulses with a 50 Hz repetition frequency were applied to a Cr target in Ar, N{sub 2}, and N{sub 2}/Ar mixtures and in a pressure range from 0.7 to 2.66 Pa. The power density peaked at 2.2-6 kW cm{sup -2}. Evidence of dominating self-sputtering was found for all investigated conditions. Up to four different discharge phases within each pulse were identified: (i) the ignition phase, (ii) the high-current metal-dominated phase, (iii) the transient phase, and (iv) the low-current gas-dominated phase. The emission of working gas excited by fast electrons penetrating the space in-between the electrodes during the ignition phase spread far outwards from the target at a speed of 24 km s{sup -1} in 1.3 Pa of Ar and at 7.5 km s{sup -1} in 1.3 Pa of N{sub 2}. The dense metal plasma created next to the target propagated in the reactor at a speed ranging from 0.7 to 3.5 km s{sup -1}, depending on the working gas composition and the pressure. In fact, it increased with higher N{sub 2} concentration and lower pressure. The form of the propagating plasma wave changed from a hemispherical shape in Ar, to a droplike shape extending far from the target in N{sub 2}. An important N{sub 2} emission rise in the latter case was detected during the transition at the end of the metal-dominated phase.

  19. In-situ spectroscopic ellipsometry and structural study of HfO{sub 2} thin films deposited by radio frequency magnetron sputtering

    SciTech Connect

    Cantas, Ayten; Aygun, Gulnur; Basa, Deepak Kumar

    2014-08-28

    We have investigated the reduction of unwanted interfacial SiO{sub 2} layer at HfO{sub 2}/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO{sub 2} thin films for possible direct contact between HfO{sub 2} thin film and Si substrate, necessary for the future generation devices based on high-κ HfO{sub 2} gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO{sub 2} thin films and also to undertake the in-situ characterization of the high-κ HfO{sub 2} thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO{sub 2} layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO{sub 2} thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO{sub 2} thin films are crystalline although they were deposited at room temperature.

  20. Combinatorial studies in Ba0.45Sr0.55TiO3 thin films for microwave components by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Alema, Fikadu; Reinholz, Aaron; Pokhodnya, Konstantin

    2014-03-01

    The optimization of dielectric properties of ferroelectric thin films for microwave applications can be limited due to the time and resources consumption of the corresponding device fabrication and testing for each doping level. We report the use of a combinatorial technique to achieve the optimal doping level of Ba0.45Sr0.55TiO3 (BST) thin film with three dopants, Mg, Nb and lanthanide (Ln) metal. The process uses two R.F. magnetron sputtering BST sources doped with few at. % of MgII/NbV in charge compensating concentration and LnIV, respectively. The guns were shifted and tilted each by 30° in opposite directions to realize the dopants gradient across a static wafer. The film is reactively co-sputtered on the static 4'' platinized Al2O3 wafer. The film crystallinity and phase purity were analyzed and correlated to its dielectric properties measured on 2432 MIM capacitors that are of lithographically fabricated using Pt top electrode. After electrical testing, the wafer was diced into 22 16x16 mm2 samples, and the elemental analysis of each piece was performed. The correlation between the composition and dielectric properties was established and the optimal dopant concentrations for obtaining maximum tunability of 75% and minimum loss of 0.02 were determined.

  1. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential

    NASA Astrophysics Data System (ADS)

    Ogwu, A. A.; Darma, T. H.

    2013-05-01

    The achievement of a reproducible and controlled deposition of partitioned Cu2O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu2O/CuO films. The production of a core rich Cu2O and surface rich Cu2O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P3/2 and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P3/2 fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(Is) to main peak intensity ratio (Im) ≤ 0.45 as an indicator of a core rich Cu2O and surface rich Cu2O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu2O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future

  2. Influence of vanadium incorporation on the microstructure, mechanical and tribological properties of Nb–V–Si–N films deposited by reactive magnetron sputtering

    SciTech Connect

    Ju, Hongbo; Xu, Junhua

    2015-09-15

    Composite Nb–V–Si–N films with various V contents (3.7–13.2 at.%) were deposited by reactive magnetron sputtering and the effects of V content on the microstructure, mechanical and tribological properties of Nb–V–Si–N films were investigated. The results revealed that a three-phase structure, consisting of face-centered cubic (fcc) Nb–V–Si–N, hexagonal close-packed (hcp) Nb–V–Si–N and amorphous Si{sub 3}N{sub 4}, co-exists in the Nb–V–Si–N films and the cubic phase is dominant. The hardness and critical load (L{sub c}) of Nb–V–Si–N films initially increased gradually and reached a summit, then decreased with the increasing V content in the films and the maximum values were 35 GPa and 9.8 N, respectively, at 6.4 at.% V. The combination of V into Nb–Si–N film led to the fracture toughness linearly increasing from 1.11 MPa·m{sup 1/2} at 3.7 at.% V to 1.67 MPa·m{sup 1/2} at 13.2 at.% V. At room temperature (RT), the average friction coefficient decreased from 0.80 at 3.7 at.% V to 0.55 at 13.2 at.% V for the Nb–V–Si–N films. The wear rate of Nb–V–Si–N films initially decreased and then increased after reaching a minimum value of about 6.35 × 10{sup −} {sup 7} mm{sup 3}/N·mm at 6.4 at.% V. As the rise of testing temperature from 200 °C to 600 °C, the average friction coefficient of Nb–V–Si–N films decreased with the increase of the testing temperature regardless of V content. However, the wear rate gradually increased for all films. The average friction coefficient and wear rate at RT and elevated temperatures were mainly influenced by the vanadium oxides with weakly bonded lattice planes. - Highlight: • Fcc-Nb–V–Si–N, hcp-Nb–V–Si–N and amorphous Si{sub 3}N{sub 4} co-existed in the films. • The amount of Si{sub 3}N{sub 4} decreased with increasing V content in the films. • Hardness of Nb–V–Si–N film (6.4 at.%) reached a maximum value of 35 GPa. • Addition of V led to the

  3. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    SciTech Connect

    Bakoglidis, Konstantinos D. Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  4. Frequency effects on the production of reactive oxygen species in atmospheric radio frequency helium-oxygen discharges

    SciTech Connect

    Zhang, Yuantao T.; He Jin

    2013-01-15

    Several experimental and computational studies have shown that increasing frequency can effectively enhance the discharge stability in atmospheric radio-frequency (rf) discharges, but the frequency effects on the reactivity of rf discharges, represented by the densities of reactive oxygen species (ROS), are still far from fully understood. In this paper, a one-dimensional fluid model with 17 species and 65 reactions taken into account is used to explore the influences of the driving frequency on the production and destruction of ROS in atmospheric rf helium-oxygen discharges. From the computational results, with an increase in the frequency the densities of ROS decrease always at a constant power density, however, in the relatively higher frequency discharges the densities of ROS can be effectively improved by increasing the input power density with an expanded oxygen admixture range, while the discharges operate in the {alpha} mode, and the numerical data also show the optimal oxygen admixture for ground state atomic oxygen, at which the peak atomic oxygen density can be obtained, increases with the driving frequency.

  5. ION MAGNETRON

    DOEpatents

    Gow, J.D.; Layman, R.W.

    1962-10-31

    A magnetohydrodynamic device or plasma generator of the ion magnetron class is described wherein a long central electrode is disposed along the axis of an evacuated cylinder. A radial electric field and an axial magnetic field are provided between the cylsnder and the electrode, forming a plasma trapping and heating region. For maximum effectiveness, neutral particles from the cylinder wall must be prevented from entering such region This is effected by forming a cylindrical sheath of electrons near the cylinder wall for ionizing undesired neutral particles, which are then trapped and removed by the magnetic field. An annular filament at one end of the device provides the electrons, which follow the axial magnetic field to a reflecting electrode at the opposite end of the device. (AEC)

  6. Reactivable passive radio-frequency identification temperature indicator

    NASA Astrophysics Data System (ADS)

    Windl, Roman; Bruckner, Florian; Abert, Claas; Suess, Dieter; Huber, Thomas; Vogler, Christoph; Satz, Armin

    2015-05-01

    A low cost, passive radio-frequency identification (RFID) temperature indicator with (re-) activation at any point of time is presented. The capability to detect a temperature excursion is realized by magnets and a solution with a melting point at the critical temperature. As the critical temperature is exceeded, a magnetic indicator switches to non-reversible and this can be monitored via a giant magnetoresistance sensor connected to a RFID tag. Depending on the solutions or metal alloys, detection of critical temperatures in a wide range from below 0 °C and up to more than 100 °C is possible. The information if a threshold temperature was exceeded (indicator state) as well as the identification number, current temperature, and user defined data can be obtained via RFID.

  7. Enhancement of the mechanical properties of AZ31 magnesium alloy via nanostructured hydroxyapatite thin films fabricated via radio-frequency magnetron sputtering.

    PubMed

    Surmeneva, M A; Tyurin, A I; Mukhametkaliyev, T M; Pirozhkova, T S; Shuvarin, I A; Syrtanov, M S; Surmenev, R A

    2015-06-01

    The structure, composition and morphology of a radio-frequency (RF) magnetron sputter-deposited dense nano-hydroxyapatite (HA) coating that was deposited on the surface of an AZ31 magnesium alloy were characterized using AFM, SEM, EDX and XRD. The results obtained from SEM and XRD experiments revealed that the bias applied during the deposition of the HA coating resulted in a decrease in the grain and crystallite size of the film having a crucial role in enhancing the mechanical properties of the fabricated biocomposites. A maximum hardness of 9.04 GPa was found for the HA coating, which was prepared using a bias of -50 V. The hardness of the HA film deposited on the grounded substrate (GS) was found to be 4.9 GPa. The elastic strain to failure (H/E) and the plastic deformation resistance (H(3)/E(2)) for an indentation depth of 50 nm for the HA coating fabricated at a bias of -50 V was found to increase by ~30% and ~74%, respectively, compared with the coating deposited at the GS holder. The nanoindentation tests demonstrated that all of the HA coatings increased the surface hardness on both the microscale and the nanoscale. Therefore, the results revealed that the films deposited on the surface of the AZ31 magnesium alloy at a negative substrate bias can significantly enhance the wear resistance of this resorbable alloy. PMID:25792410

  8. Growth Behavior of Ga-Doped ZnO Thin Films Deposited on Au/SiN/Si(001) Substrates by Radio Frequency Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Seo, Seon Hee; Kang, Hyon Chol

    2013-11-01

    This paper reports the growth behavior of Ga-doped ZnO (ZnO:Ga) thin films deposited on Au/SiN/Si(001) substrates by radio-frequency magnetron sputtering. The microstructures of the overgrown ZnO:Ga thin films were investigated by performing X-ray diffraction, scanning electron microcopy, and transmission electron microscopy analyses. It was confirmed that the growth process proceeds through three stages. In the first stage, nano-scale ZnO:Ga islands were grown on the SiN layer, while a fairly continuous flat structure was formed on the Au nanoparticles (NPs). In the second stage of the growth process, ZnO:Ga domains with different growth orientations, depending strongly on the crystalline planes of the host Au NPs, were nucleated. These domains then grew at different rates, resulting in a change in the morphology from the initial shape reflecting that of the Au NPs to a sunflower-type shape. In the final stage, columnar growth with a preferred (0002) orientation along the surface normal direction became dominant.

  9. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  10. Simultaneous catalyst deposition and growth of aligned carbon nanotubes on SiO{sub 2}/Si substrates by radio frequency magnetron sputtering

    SciTech Connect

    Scalese, S.; Scuderi, V.; Privitera, V.; Pennisi, A.; Simone, F.

    2007-12-01

    Radio frequency magnetron sputtering has been used for the synthesis of aligned carbon nanotubes (CNTs) on a SiO{sub 2}/Si substrate, with simultaneous in situ catalyst deposition. This method allows the use of substrates without the need of a surface predeposition of catalytic particles. In particular, among the metals considered, we observed the formation of CNTs using W or Ni as catalysts. Only in the case of Ni did we find that the CNTs are aligned along the target-substrate direction, unlike the randomly oriented CNTs observed when W was used as catalyst. Scanning and transmission electron microscopies show that the catalytic Ni nanoparticle is found mostly on the tip of the obtained bamboolike CNTs, while W nanoparticles are encapsulated inside hollow nanotubes, at different points along their length. We ascribe not only the observed structural differences to the size of the W and Ni particles but also to a different diffusion behavior of C in the two kinds of metallic clusters.

  11. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  12. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    PubMed

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition. PMID:27483888

  13. Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Choi, Nak-Jung; Son, Hyo-Soo; Choi, Hyun-Jun; Kim, Kyoung-Kook; Lee, Sung-Nam

    2014-08-01

    We comparatively investigated the crystal and the optical properties of nonpolar (10-10) ZnO films grown on m-plane sapphire substrates by using atomic layer deposition (ALD) and radio frequency (RF) magnetron sputtering. From high-resolution X-ray ω/2 θ scans, the (100) peak of the ALD-grown ZnO film was clearly developed at ~ 15.9 ° while that of the RF sputter-grown ZnO was broadly observed at 15.6 ~ 15.9 °, indicating that a nonpolar (10-10) ZnO film would be preferentially grown on an m-plane sapphire substrate. The photoluminescence bandedge emission intensity of the ALD-grown (10-10) ZnO film was ten times higher than that of the RF sputtergrown ZnO film. In addition, the electroluminescence intensity of a semipolar (11-22) GaN-based light-emitting diode (LED) with an ALD-grown (10-10) ZnO film as a transparent conductive oxide material was much higher than that of a semipolar (11-22) GaN-based LED with RF sputter-grown (10-10) ZnO film.

  14. Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection

    NASA Astrophysics Data System (ADS)

    Promros, Nathaporn; Baba, Ryuji; Takahara, Motoki; Mostafa, Tarek M.; Sittimart, Phongsaphak; Shaban, Mahmoud; Yoshitake, Tsuyoshi

    2016-06-01

    β-FeSi2 thin films were epitaxially grown on p-type Si(111) substrates at a substrate temperature of 560 °C and Ar pressure of 2.66 × 10‑1 Pa by radio-frequency magnetron sputtering (RFMS) using a sintered FeSi2 target, without postannealing. The resultant n-type β-FeSi2/p-type Si heterojunctions were evaluated as near-infrared photodiodes. Three epitaxial variants of β-FeSi2 were confirmed by X-ray diffraction analysis. The heterojunctions exhibited typical rectifying action at room temperature. At 300 K, the heterojunctions showed a substantial leakage current and minimal response for irradiation of near-infrared light. At 50 K, the leakage current was markedly reduced and the ratio of the photocurrent to dark current was considerably enhanced. The detectivity at 50 K was estimated to be 3.0 × 1011 cm Hz1/2/W at a zero bias voltage. Their photodetection was inferior to those of similar heterojunctions prepared using facing-target direct-current sputtering (FTDCS) in our previous study. This inferiority is likely because β-FeSi2 films prepared using RFMS are located in plasma and are damaged by it.

  15. Morphology and structure evolution of tin-doped indium oxide thin films deposited by radio-frequency magnetron sputtering: The role of the sputtering atmosphere

    SciTech Connect

    Nie, Man Mete, Tayfun; Ellmer, Klaus

    2014-04-21

    The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thickness also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.

  16. Change of scattering mechanism and annealing out of defects on Ga-doped ZnO films deposited by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Nulhakim, Lukman; Makino, Hisao

    2016-06-01

    This study examines the change of carrier scattering mechanism and defects states in Ga-doped ZnO (GZO) thin films deposited by radio-frequency magnetron sputtering as a function of the substrate temperature (Ts) during deposition. The GZO films deposited at room temperature exhibited a high defect density that resulted in a lower carrier concentration, lower Hall mobility, and optical absorption in visible wavelength range. Such defects were created by ion bombardment and were eliminated by increasing the Ts. The defects related to the optical absorption disappeared at a Ts of 125 °C. The defects responsible for the suppression of the carrier concentration gradually decreased with increasing Ts up to 200 °C. As a result, the carrier concentration and in-grain carrier mobility gradually increased. The Hall mobility was also influenced by film structural properties depending on the Ts. In addition to the c-axis preferred orientation, other oriented grains such as the (10 1 ¯ 1 ) plane parallel to the substrate surface appeared below 150 °C. This orientation of the (10 1 ¯ 1 ) plane significantly reduced the Hall mobility via grain boundary scattering. The films deposited at a Ts higher than 175 °C exhibited perfect c-axis orientation and grain boundary scattering was thus negligible in these films. The appearance of the 10 1 ¯ 1 peak in x-ray diffraction profile was correlated with the contribution of grain boundary scattering in heavily doped GZO films.

  17. Peer-to-Peer Magnetron Locking

    NASA Astrophysics Data System (ADS)

    Cruz, Edward Jeffrey

    The viability of coherent power combination of multiple high-efficiency, moderate power magnetrons requires a thorough understanding of frequency and phase control. Injection locking of conventional magnetrons, and other types of oscillators, employing a master-to-slave configuration has been studied theoretically and experimentally. This dissertation focuses on the peer-to-peer locking, where each oscillator acts as a master of and slave to all others, between two conventional magnetrons, where the general condition for locking was recently derived. The experiments performed on peer-to-peer locking of two 1-kW magnetrons verify the recently developed theory on the condition under which the two nonlinear oscillators may be locked to a common frequency and relative phase. This condition reduces to Adler's classical locking condition (master-slave) if the coupling is one way. Dependent on the degree of coupling, the frequency of oscillation when locking occurs was found to not necessarily lie between the two magnetrons' free running frequencies. Likewise, when the locking condition was violated, the beat of the spectrum was not necessarily found to be equal to the difference between the free running frequencies. The frequency of oscillation and relative phase between the two magnetrons when locking did occur were found to correspond to one of two solution modes given by the recent theory. The accessibility of the two possible modes is yet to be determined. This work was supported by ONR, AFRL, AFOSR, L-3 Communications Electron Devices Division and Northrop-Grumman Corporation.

  18. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    SciTech Connect

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-21

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness R{sub q} evolves with film thickness as a power law, R{sub q} ∼ d{sub f}{sup β}, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β{sub 1} = 0.14 and β{sub 2} = 0.64 for RT, and β{sub 1} = 0.89 and β{sub 2} = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  19. Microstructure evolution of Al-doped zinc oxide and Sn-doped indium oxide deposited by radio-frequency magnetron sputtering: A comparison

    NASA Astrophysics Data System (ADS)

    Nie, Man; Bikowski, Andre; Ellmer, Klaus

    2015-04-01

    The microstructure and morphology evolution of Al-doped zinc oxide (AZO) and Sn-doped indium oxide (ITO) thin films on borosilicate glass substrates deposited by radio-frequency magnetron sputtering at room temperature (RT) and 300 °C were investigated by X-ray diffraction and atomic force microscopy (AFM). One-dimensional power spectral density (1DPSD) functions derived from the AFM profiles, which can be used to distinguish different growth mechanisms, were used to compare the microstructure scaling behavior of the thin films. The rms roughness Rq evolves with film thickness as a power law, Rq ˜ dfβ, and different growth exponents β were found for AZO and ITO films. For AZO films, β of 1.47 and 0.56 are obtained for RT and 300 °C depositions, respectively, which are caused by the high compressive stress in the film at RT and relaxation of the stress at 300 °C. While for ITO films, β1 = 0.14 and β2 = 0.64 for RT, and β1 = 0.89 and β2 = 0.3 for 300 °C deposition are obtained, respectively, which is related to the strong competition between the surface diffusion and shadowing effect and/or grain growth. Electrical properties of both materials as a function of film thickness were also compared. By the modified Fuchs-Sondheimer model fitting of the electrical transport in both materials, different nucleation states are pointed out for both types of films.

  20. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering.

    PubMed

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2014-10-22

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS=500°C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the SiC network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the SiC bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant. PMID:25459700

  1. An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Daouahi, Mohsen; Omri, Mourad; Kerm, Abdul Ghani Yousseph; Al-Agel, Faisal Abdulaziz; Rekik, Najeh

    2015-02-01

    The aim of the study reported in this paper is to investigate the role of the high partial pressure of hydrogen introduced during the growth of nanocrystalline silicon carbide thin films (nc-SiC:H). For this purpose, we report the preparation as well as spectroscopic studies of four series of nc-SiC:H obtained by radio-frequency magnetron sputtering at high partial pressure of hydrogen by varying the percentage of H2 in the gas mixture from 70% to 100% at common substrate temperature (TS = 500 °C). The effects of the dilution on the structural changes and the chemical bonding of the different series have been studied using Fourier transform infrared and Raman spectroscopy. For this range of hydrogen dilution, two groups of films were obtained. The first group is characterized by the dominance of the crystalline phase and the second by a dominance of the amorphous phase. This result confirms the multiphase structure of the grown nc-SiC:H thin films by the coexistence of the Sisbnd C network, carbon-like and silicon-like clusters. Furthermore, infrared results show that the Sisbnd C bond is the dominant absorption peak and the carbon atom is preferentially bonded to silicon. The maximum value obtained of the crystalline fraction is about 77%, which is relatively important compared to other results obtained by other techniques. In addition, the concentration of CHn bonds was found to be lower than that of SiHn for all series. Raman measurements revealed that the crystallization occurs in all series even at 100% H2 dilution suggesting that high partial pressure of hydrogen favors the formation of silicon nanocrystallites (nc-Si). The absence of both the longitudinal acoustic band and the transverse optical band indicate that the crystalline phase is dominant.

  2. A study of Ta xC 1 -x coatings deposited on biomedical 316L stainless steel by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ding, M. H.; Wang, B. L.; Li, L.; Zheng, Y. F.

    2010-11-01

    In this paper, Ta xC 1 -x coatings were deposited on 316L stainless steel (316L SS) by radio-frequency (RF) magnetron sputtering at various substrate temperatures ( Ts) in order to improve its corrosion resistance and hemocompatibility. XRD results indicated that Ts could significantly change the microstructure of Ta xC 1 -x coatings. When Ts was <150 °C, the Ta xC 1 -x coatings were in amorphous condition, whereas when Ts was ≥150 °C, TaC phase was formed, exhibiting in the form of particulates with the crystallite sizes of about 15-25 nm ( Ts = 300 °C). Atomic force microscope (AFM) results showed that with the increase of Ts, the root-mean-square (RMS) values of the Ta xC 1 -x coatings decreased. The nano-indentation experiments indicated that the Ta xC 1 -x coating deposited at 300 °C had a higher hardness and modulus. The scratch test results demonstrated that Ta xC 1 -x coatings deposited above 150 °C exhibited good adhesion performance. Tribology tests results demonstrated that Ta xC 1 -x coatings exhibited excellent wear resistance. The results of potentiodynamic polarization showed that the corrosion resistance of the 316L SS was improved significantly because of the deposited Ta xC 1 -x coatings. The platelet adhesion test results indicated that the Ta xC 1 -x coatings deposited at Ts of 150 °C and 300 °C possessed better hemocompatibility than the coating deposited at Ts of 25 °C. Additionally, the hemocompatibility of the Ta xC 1 -x coating on the 316L SS was found to be influenced by its surface roughness, hydrophilicity and the surface energy.

  3. Anatase TiO₂ films with dominant {001} facets fabricated by direct-current reactive magnetron sputtering at room temperature: oxygen defects and enhanced visible-light photocatalytic behaviors.

    PubMed

    Zheng, Jian-Yun; Bao, Shan-Hu; Guo, Yu; Jin, Ping

    2014-04-23

    A TiO2 film with dominant anatase {001} facets is directly prepared by direct-current reactive magnetron sputtering at room temperature without using morphology-controlling agents. The formation mechanism of anatase TiO2 films with dominant {001} facets is explained by the competition between thermodynamics and ion impinging in the deposition process. The crystalline TiO2 film shows a superior photocatalytic efficiency for the degradation of Rhodamine B under UV-visible (λ > 250 nm) lights. Furthermore, a comparable photodegradation of Rhodamine B is also found on the TiO2 film surface by using visible (λ > 420 nm) lights. During film growth, the surface bombarded by high energy of ions yields plenty of oxygen defects, which can enhance the photocatalytic activity of the films irradiated under visible light. PMID:24720367

  4. Structural, chemical and nanomechanical investigations of SiC/polymeric a-C:H films deposited by reactive RF unbalanced magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tomastik, C.; Lackner, J. M.; Pauschitz, A.; Roy, M.

    2016-03-01

    Amorphous carbon (or diamond-like carbon, DLC) films have shown a number of important properties usable for a wide range of applications for very thin coatings with low friction and good wear resistance. DLC films alloyed with (semi-)metals show some improved properties and can be deposited by various methods. Among those, the widely used magnetron sputtering of carbon targets is known to increase the number of defects in the films. Therefore, in this paper an alternative approach of depositing silicon-carbide-containing polymeric hydrogenated DLC films using unbalanced magnetron sputtering was investigated. The influence of the C2H2 precursor concentration in the deposition chamber on the chemical and structural properties of the deposited films was investigated by Raman spectroscopy, X-ray photoelectron spectroscopy and elastic recoil detection analysis. Roughness, mechanical properties and scratch response of the films were evaluated with the help of atomic force microscopy and nanoindentation. The Raman spectra revealed a strong correlation of the film structure with the C2H2 concentration during deposition. A higher C2H2 flow rate results in an increase in SiC content and decrease in hydrogen content in the film. This in turn increases hardness and elastic modulus and decreases the ratio H/E and H3/E2. The highest scratch resistance is exhibited by the film with the highest hardness, and the film having the highest overall sp3 bond content shows the highest elastic recovery during scratching.

  5. Stress evolution during growth of GaN (0001)/Al2O3(0001) by reactive dc magnetron sputter epitaxy

    NASA Astrophysics Data System (ADS)

    Junaid, M.; Sandström, P.; Palisaitis, J.; Darakchieva, V.; Hsiao, C.-L.; Persson, P. O. Å.; Hultman, L.; Birch, J.

    2014-04-01

    We study the real time stress evolution, by in situ curvature measurements, during magnetron sputter epitaxy of GaN (0 0 0 1) epilayers at different growth temperatures, directly on Al2O3(0 0 0 1) substrates. The epilayers are grown by sputtering from a liquid Ga target in a mixed N2/Ar discharge. For 600 °C, a tensile biaxial stress evolution is observed, while for 700 °C and 800 °C, compressive stress evolutions are observed. Structural characterization by cross-sectional transmission electron microscopy, and atomic force microscopy, revealed that films grew at 700 °C and 800 °C in a layer-by-layer mode while a growth temperature of 600 °C led to an island growth mode. High resolution x-ray diffraction data showed that edge and screw threading dislocation densities decreased with increasing growth temperature, with a total density of 5.5 × 1010 cm-2 at 800 °C. The observed stress evolution and growth modes are explained by a high surface mobility during magnetron sputter epitaxy at 700-800 °C. Other possible reasons for the different stress evolutions are also discussed.

  6. A flexible active and reactive power control strategy for a variable speed constant frequency generating system

    SciTech Connect

    Tang, Y.; Xu, L.

    1995-07-01

    Variable-speed constant-frequency generating systems are used in wind power, hydro power, aerospace, and naval power generations to enhance efficiency and reduce friction. In these applications, an attractive candidate is the slip power recovery system comprising of doubly excited induction machine or doubly excited brushless reluctance machine and PWM converters with a dc link. In this paper, a flexible active and reactive power control strategy is developed, such that the optimal torque-speed profile of the turbine can be followed and overall reactive power can be controlled, while the machine copper losses have been minimized. At the same time, harmonics injected into the power network has also been minimized. In this manner, the system can function as both a high-efficient power generator and a flexible reactive power compensator.

  7. An optimal frequency range for assessing the pressure reactivity index in patients with traumatic brain injury.

    PubMed

    Howells, Tim; Johnson, Ulf; McKelvey, Tomas; Enblad, Per

    2015-02-01

    The objective of this study was to identify the optimal frequency range for computing the pressure reactivity index (PRx). PRx is a clinical method for assessing cerebral pressure autoregulation based on the correlation of spontaneous variations of arterial blood pressure (ABP) and intracranial pressure (ICP). Our hypothesis was that optimizing the methodology for computing PRx in this way could produce a more stable, reliable and clinically useful index of autoregulation status. The patients studied were a series of 131 traumatic brain injury patients. Pressure reactivity indices were computed in various frequency bands during the first 4 days following injury using bandpass filtering of the input ABP and ICP signals. Patient outcome was assessed using the extended Glasgow Outcome Scale (GOSe). The optimization criterion was the strength of the correlation with GOSe of the mean index value over the first 4 days following injury. Stability of the indices was measured as the mean absolute deviation of the minute by minute index value from 30-min moving averages. The optimal index frequency range for prediction of outcome was identified as 0.018-0.067 Hz (oscillations with periods from 55 to 15 s). The index based on this frequency range correlated with GOSe with ρ=-0.46 compared to -0.41 for standard PRx, and reduced the 30-min variation by 23%. PMID:24664812

  8. Contribution of neurophysiological endophenotype, individual frequency of EEG alpha oscillations, to mechanisms of emotional reactivity.

    PubMed

    Tumyalis, A V; Aftanas, L I

    2014-04-01

    We studied the relationship between individual alpha frequency (IAF) of EEG (neurophysiological endophenotype reflecting individual predisposition to efficacious cognitive and creative activity) and individual emotional reactivity. The psychophysiological study included healthy men in two models of evoked emotions - anxious apprehension (awaiting of inescapable aversive punishment) and discrete (opposite) emotions. Analysis of self-report, multichannel EEG, galvanic skin response, and cardiovascular reactivity showed that individuals with high IAF are characterized by predominance of parasympathetic influences in autonomic regulation circuit, proactive strategies of coping with inescapable threat, higher activity of positive emotional attitude and availability of memory traces about positive experience. Individuals with low IAF demonstrate predominance of sympathetic influences and maladaptive avoidance-like coping with inescapable threat and insufficiency of positive emotional activation mechanisms. It is suggested that IAF participates in the formation of individual emotional space and strategies of coping with emotional challenges. PMID:24824678

  9. Electrochromic behavior of W(x)Si(y)O(z) thin films prepared by reactive magnetron sputtering at normal and glancing angles.

    PubMed

    Gil-Rostra, Jorge; Cano, Manuel; Pedrosa, José M; Ferrer, Francisco Javier; García-García, Francisco; Yubero, Francisco; González-Elipe, Agustín R

    2012-02-01

    This work reports the synthesis at room temperature of transparent and colored W(x)Si(y)O(z) thin films by magnetron sputtering (MS) from a single cathode. The films were characterized by a large set of techniques including X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), Fourier transform infrared (FT-IR), and Raman spectroscopies. Their optical properties were determined by the analysis of the transmission and reflection spectra. It was found that both the relative amount of tungsten in the W-Si MS target and the ratio O(2)/Ar in the plasma gas were critical parameters to control the blue coloration of the films. The long-term stability of the color, attributed to the formation of a high concentration of W(5+) and W(4+) species, has been related with the formation of W-O-Si bond linkages in an amorphous network. At normal geometry (i.e., substrate surface parallel to the target) the films were rather compact, whereas they were very porous and had less tungsten content when deposited in a glancing angle configuration. In this case, they presented outstanding electrochromic properties characterized by a fast response, a high coloration, a complete reversibility after more than one thousand cycles and a relatively very low refractive index in the bleached state. PMID:22208156

  10. Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

    SciTech Connect

    Junaid, M.; Hsiao, C.-L.; Palisaitis, J.; Jensen, J.; Persson, P. O. A.; Hultman, L.; Birch, J.

    2011-04-04

    Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

  11. Nanocomposite Ti/hydrocarbon plasma polymer films from reactive magnetron sputtering as growth support for osteoblast-like and endothelial cells.

    PubMed

    Grinevich, Andrey; Bacakova, Lucie; Choukourov, Andrei; Boldyryeva, Hanna; Pihosh, Yuriy; Slavinska, Danka; Noskova, Lenka; Skuciova, Maria; Lisa, Vera; Biederman, Hynek

    2009-03-15

    Nanocomposite Ti/hydrocarbon plasma polymer (Ti/ppCH) films were deposited by DC magnetron sputtering of titanium target in n-hexane, argon, or a mixture of these two gases. The resultant films were heterogeneous, with inorganic regions of nanometer scale distributed within a plasma polymer matrix. The titanium content was controlled by adjusting the argon/n-hexane ratio in the working gas. In the pure n-hexane atmosphere, the Ti concentration was found to be below 1 at %, whereas in pure argon it reached 20 at %, as measured by Rutherford backscattering spectroscopy and elastic recoil detection analysis (RBS/ERDA). A high level of titanium oxidation is detected with TiO(2), substoichiometric titania, and titanium carbide, composing an inorganic phase of the composite films. In addition, high hydrogen content is detected in films rich with titanium. Ti-deficient and Ti-rich films proved equally good substrates for adhesion and growth of cultured human osteoblast-like MG 63 cells. In these cells, the population densities on days 1, 3, and 7 after seeding, spreading area on day 1, formation of talin-containing focal adhesion plaques as well as concentrations of talin and osteocalcin (per mg of protein) were comparable to the values obtained in cells on the reference cell culture materials, represented by microscopic glass coverslips or a polystyrene dish. An interesting finding was made when the Ti/ppCH films were seeded with calf pulmonary artery endothelial cells of the line CPAE. The cell population densities, the spreading area and also the concentration of von Willebrand factor, a marker of endothelial cell maturation, were significantly higher on Ti-rich than on Ti-deficient films. On Ti-rich films, these parameters were also higher or similar in comparison with the reference cell culture materials. Thus, both types of films could be used for coating bone implants, of which the Ti-rich film remains effective in enhancing the endothelialization of blood

  12. High frequencies of circulating melanoma-reactive CD8+ T cells in patients with advanced melanoma.

    PubMed

    Letsch, A; Keilholz, U; Schadendorf, D; Nagorsen, D; Schmittel, A; Thiel, E; Scheibenbogen, C

    2000-09-01

    To determine whether circulating tumor-reactive T cells are present in melanoma patients, unstimulated T cells from peripheral blood were tested for recognition of HLA-A2- or HLA-A1-matched melanoma cell lines using the ELISPOT assay. Eleven out of 19 patients with metastatic melanoma had a T-cell response with up to 0.81%, 0.78%, 0. 53%, 0.12%, 0.10%, 0.09%, 0.07%, 0.06%, 0.06%, 0.04%, and 0.04% of peripheral blood mononuclear cells (PBMC) secreting IFNgamma upon exposure to various HLA-A2- or HLA-A1-matched melanoma cell lines. These T-cell responses were mediated by CD8+ T cells and could specifically be blocked by an anti-HLA-A2 antibody in HLA-A2-positive patients. Separation experiments performed in one melanoma patient showed tumor-reactive T cells in both the CD8+ effector T cell (CD45RA+/IFNgamma+) as well as the CD8+ memory T-cell compartment (CD45RO+/IFNgamma+). In 3 out of 5 patients, in whom autologous cell lines were available, similar frequencies of T cells in response to HLA-A1- or HLA-A2-matched allogeneic and autologous tumor cells were observed, while 2 patients had a T-cell response restricted to either the autologous or the allogeneic cell lines. These results give evidence for the presence of tumor-reactive CD8+ T cells in more than half of melanoma patients tested. Although some of these patients have clinical evidence for an immunological-mediated tumor control, several patients have growing tumors suggesting presence of escape mechanisms. PMID:10925359

  13. Photocatalytic Properties of TiO2 Films Deposited by Reactive Sputtering in Mid-Frequency Mode with Dual Cathodes

    NASA Astrophysics Data System (ADS)

    Ohno, Shingo; Sato, Daisuke; Kon, Masato; Sato, Yasushi; Yoshikawa, Masato; Frach, Peter; Shigesato, Yuzo

    2004-12-01

    Titanium dioxide (TiO2) films were deposited on unheated nonalkali glass substrates by reactive midfrequency (mf) magnetron sputtering using dual cathodes with two Ti metal targets. In order to maintain the very high deposition rate, the depositions were successfully carried out stably in the “transition region” between the metallic and reactive (oxide) sputter modes using plasma control units (PCU). Very high-rate depositions of 12-70 nm/min were successfully achieved in the deposition of TiO2 films throughout the whole “transition region”. The as-deposited films deposited in the “oxide mode” had a polycrystalline anatase structure and exhibited both photoinduced hydrophilicity and photodecomposition of acetaldehyde. Whereas, all the as-deposited TiO2 films deposited in the “transition region” had amorphous structure, which did not exhibit photocatalytic activity. Such amorphous films deposited in the transition region were crystallized by postannealing in air at 200°C or 300°C and were then shown to have photocatalytic activity. Very thin TiO2 films with a thickness of 25 nm deposited in the transition region and postannealed at 300°C exhibited photoinduced hydrophilicity, whereas there was a clear thickness dependence of photodecomposition and the rather thick films of 300 nm exhibited pronounced photodecomposition.

  14. Second order elasticity at hypersonic frequencies of reactive polyurethanes as seen by generalized Cauchy relations.

    PubMed

    Philipp, M; Vergnat, C; Müller, U; Sanctuary, R; Baller, J; Possart, W; Alnot, P; Krüger, J K

    2009-01-21

    The non-equilibrium process of polymerization of reactive polymers can be accompanied by transition phenomena like gelation or the chemical glass transition. The sensitivity of the mechanical properties at hypersonic frequencies-including the generalized Cauchy relation-to these transition phenomena is studied for three different polyurethanes using Brillouin spectroscopy. As for epoxies, the generalized Cauchy relation surprisingly holds true for the non-equilibrium polymerization process and for the temperature dependence of polyurethanes. Neither the sol-gel transition nor the chemical and thermal glass transitions are visible in the representation of the generalized Cauchy relation. Taking into account the new results and combining them with general considerations about the elastic properties of the isotropic state, an improved physical foundation of the generalized Cauchy relation is proposed. PMID:21817265

  15. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  16. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  17. Spin Biochemistry Modulates Reactive Oxygen Species (ROS) Production by Radio Frequency Magnetic Fields

    PubMed Central

    Usselman, Robert J.; Hill, Iain; Singel, David J.; Martino, Carlos F.

    2014-01-01

    The effects of weak magnetic fields on the biological production of reactive oxygen species (ROS) from intracellular superoxide (O2•−) and extracellular hydrogen peroxide (H2O2) were investigated in vitro with rat pulmonary arterial smooth muscle cells (rPASMC). A decrease in O2•− and an increase in H2O2 concentrations were observed in the presence of a 7 MHz radio frequency (RF) at 10 μTRMS and static 45 μT magnetic fields. We propose that O2•− and H2O2 production in some metabolic processes occur through singlet-triplet modulation of semiquinone flavin (FADH•) enzymes and O2•− spin-correlated radical pairs. Spin-radical pair products are modulated by the 7 MHz RF magnetic fields that presumably decouple flavin hyperfine interactions during spin coherence. RF flavin hyperfine decoupling results in an increase of H2O2 singlet state products, which creates cellular oxidative stress and acts as a secondary messenger that affects cellular proliferation. This study demonstrates the interplay between O2•− and H2O2 production when influenced by RF magnetic fields and underscores the subtle effects of low-frequency magnetic fields on oxidative metabolism, ROS signaling, and cellular growth. PMID:24681944

  18. Single-phase polycrystalline Ti(1-x)W(x)N alloys (0 less than or equal to x less than or equal to 0.7)grown by UHV reactive magnetron sputtering: Microstructure and physical properties

    NASA Astrophysics Data System (ADS)

    Moser, J. H.; Tian, F.; Haller, O.; Bergstrom, D. B.; Petrov, I.; Greene, J. E.; Wiemer, C.

    1994-12-01

    Single-phase 300 nm thick B1-NaCl structure polycrystalline Ti(1-x)W(x)N alloys, with compositions extending from TiN to Ti(0.3)W(0.7)N, have been grown at 500 C on amorphous SiO2 by ultra-high vacuum reactive magnetron sputtering from Ti and W targets in 10 mTorr N2 discharges. The anion-to-cation ratio ranged from slightly overstoichiometric (1 less than N/(Ti+W) less than or equal to 1.1) in TiN-rich alloys to understoichiometric in WN-rich alloys with N/(Ti+W)=0.9 at x=0.7. The relaxed alloy lattice constant a(sub 0) initially increased with increasing W and then decreased below the stoichiometric TiN value, a(sub TiN)=0.42416 nm, for understoichiometric (i.e. N deficient) alloys with x greater than 0.5. Plan-view and cross-sectional transmission electron microscopy showed that the films exhibited a columnar microstructure, with typical column diameters of 20-25 nm, and a preferred orientation which changed from strong (111) in TiN-rich alloys to strong (002) in WN-rich alloys. The normalized room-temperature resistivity increased linearly at a rate drho/rho(sub TiN) dx=2.5 with increasing WN concentration x due to a combination of alloy, boundary, and free-surface scattering. All of the above results as a function of film composition are directly related to differences in the intensity of low-energy particle irradiation (primarily backscattered N) during film growth.

  19. Solid oxide fuel cells with (La,Sr)(Ga,Mg)O3-δ electrolyte film deposited by radio-frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Sea-Fue; Lu, His-Chuan; Hsu, Yung-Fu; Hu, Yi-Xuan

    2015-05-01

    In this study, solid oxide fuel cells (SOFCs) containing a high quality La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) film deposited on anode supported substrate using RF magnetron sputtering are successfully prepared. The anode substrate is composed of two functional NiO/Sm0.2Ce0.8O2-δ (SDC) composite layers with ratios of 60/40 wt% and 50/50 wt% and a current collector layer of pure NiO. The as-deposited LSGM film appears to be amorphous in nature. After post-annealing at 1000 °C, a uniform and dense polycrystalline film with a composition of La0.87Sr0.13Ga0.85Mg0.15O3-δ and a thickness of 3.8 μm is obtained, which was well adhered to the anode substrate. A composite LSGM/La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) layer, with a ratio of 30/70 wt%, is used as the cathode. The SOFC prepared reveals a good mechanical integrity with no sign of cracking, delamination, or discontinuity among the interfaces. The total cell resistance of a single cell with LSGM electrolyte film declines from 0.60 to 0.10 Ω cm2 as the temperature escalates from 600 to 800 °C and the open circuit voltage (OCV) ranges from 0.85 to 0.95 V. The maximum power density (MPD) of the single cell is reported as 0.65, 1.02, 1.30, 1.42, and 1.38 W cm-2 at 600, 650, 700, 750, and 800 °C, respectively. The good cell performance leads to the conclusion that RF magnetron sputtering is a feasible deposition method for preparing good quality LSGM films in SOFCs.

  20. Populations of metastable and resonant argon atoms in radio frequency magnetron plasmas used for deposition of indium-zinc-oxide films

    SciTech Connect

    Maaloul, L.; Morel, S.; Stafford, L.

    2012-03-15

    This work reports optical absorption spectroscopy measurements of the number density of Ar atoms in resonant ({sup 3}P{sub 1}, {sup 1}P{sub 1}) and metastable ({sup 3}P{sub 2}, {sup 3}P{sub 0}) states in rf magnetron sputtering plasmas used for the deposition of ZnO-based thin films. While the density of Ar {sup 3}P{sub 2} and {sup 3}P{sub 0} was fairly independent of pressure in the range of experimental conditions investigated, the density of Ar {sup 3}P{sub 1} and {sup 1}P{sub 1} first sharply increased with pressure and then reached a plateau at values close to those of the {sup 3}P{sub 2} and {sup 3}P{sub 0} levels at pressures above about 50 mTorr. At such pressures, ultraviolet radiation from resonant states becomes trapped such that these levels behave as metastable states. For a self-bias voltage of -115 V and pressures in the 5-100 mTorr range, similar number densities of Ar resonant and metastable atoms were obtained for Zn, ZnO, and In{sub 2}O{sub 3} targets, suggesting that, over the range of experimental conditions investigated, collisions between these excited species and sputtered Zn, In, and O atoms played only a minor role on the discharge kinetics. The metastable-to-ground state number density ratios were also fitted to the predictions of a global model using the average electron temperature, T{sub e}, as the only adjustable parameter. For all targets examined, the values of T{sub e} deduced from this method were in excellent agreement with those obtained from Langmuir probe measurements.

  1. Relation between surface and bulk electronic properties of Al doped ZnO films deposited at varying substrate temperature by radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Singh, C. C.; Patel, T. A.; Panda, E.

    2015-06-01

    In this study, a qualitative relationship between the surface and bulk electronic states for Al-doped ZnO (AZO) thin films (thickness < 260 nm) is established. To this end, AZO films were deposited on soda lime glass substrates by varying substrate temperature (Ts) from 303 K to 673 K in RF magnetron sputtering. All these AZO films are found to have grown in ZnO hexagonal wurtzite structure with strong (002) orientation of the crystallites and with an average transmittance of 84%-91% in the visible range. Room temperature scanning tunneling spectroscopy measurements reveal semiconducting behavior for the films deposited at Ts ≤ 373 K and semi-metallic behavior for those deposited at Ts > 373 K. Further, these films show two modes of electron tunneling, (a) direct tunneling at lower bias voltage and (b) FN tunneling at higher bias voltage, with transition voltage ( Vtrans ) shifting towards lower bias voltage (and thereby reducing the barrier height ( Φ)) with increasing Ts. This is attributed to additional (local) density of states near the Fermi level of these AZO films because of higher carrier concentration ( ne ) at increased Ts. Thus, qualitatively, the behavior in both the local surface electronic states and bulk state electronic properties for these deposited AZO films are found to follow similar trends with increasing Ts. The variation in local barrier heights (indicative of the local surface electronic structures) across the AZO film surface is found to be smaller for the films deposited at Ts ≤ 373 K, where semiconducting behavior is observed and wider for the semi-metallic AZO films deposited at higher Ts > 373 K, indicating a larger inhomogeneity of local surface electronic properties at higher bulk carrier concentration.

  2. A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential

    SciTech Connect

    Ogwu, A. A.; Darma, T. H.

    2013-05-14

    The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory

  3. Magnetron injection gun scaling

    SciTech Connect

    Lawson, W.

    1988-04-01

    Existing analytic design equations for magnetron injection guns (MIG's) are approximated to obtain a set of scaling laws. The constraints are chosen to examine the maximum peak power capabilities of MIG's. The scaling laws are compared with exact solutions of the design equations and are supported by MIG simulations.

  4. Alpha reactivity to first names differs in subjects with high and low dream recall frequency

    PubMed Central

    Ruby, Perrine; Blochet, Camille; Eichenlaub, Jean-Baptiste; Bertrand, Olivier; Morlet, Dominique; Bidet-Caulet, Aurélie

    2013-01-01

    Studies in cognitive psychology showed that personality (openness to experience, thin boundaries, absorption), creativity, nocturnal awakenings, and attitude toward dreams are significantly related to dream recall frequency (DRF). These results suggest the possibility of neurophysiological trait differences between subjects with high and low DRF. To test this hypothesis we compared sleep characteristics and alpha reactivity to sounds in subjects with high and low DRF using polysomnographic recordings and electroencephalography (EEG). We acquired EEG from 21 channels in 36 healthy subjects while they were presented with a passive auditory oddball paradigm (frequent standard tones, rare deviant tones and very rare first names) during wakefulness and sleep (intensity, 50 dB above the subject's hearing level). Subjects were selected as High-recallers (HR, DRF = 4.42 ± 0.25 SEM, dream recalls per week) and Low-recallers (LR, DRF = 0.25 ± 0.02) using a questionnaire and an interview on sleep and dream habits. Despite the disturbing setup, the subjects' quality of sleep was generally preserved. First names induced a more sustained decrease in alpha activity in HR than in LR at Pz (1000–1200 ms) during wakefulness, but no group difference was found in REM sleep. The current dominant hypothesis proposes that alpha rhythms would be involved in the active inhibition of the brain regions not involved in the ongoing brain operation. According to this hypothesis, a more sustained alpha decrease in HR would reflect a longer release of inhibition, suggesting a deeper processing of complex sounds than in LR during wakefulness. A possibility to explain the absence of group difference during sleep is that increase in alpha power in HR may have resulted in awakenings. Our results support this hypothesis since HR experienced more intra sleep wakefulness than LR (30 ± 4 vs. 14 ± 4 min). As a whole our results support the hypothesis of neurophysiological trait differences in high

  5. Subthalamic nucleus high-frequency stimulation modulates neuronal reactivity to cocaine within the reward circuit.

    PubMed

    Hachem-Delaunay, Sabira; Fournier, Marie-Line; Cohen, Candie; Bonneau, Nicolas; Cador, Martine; Baunez, Christelle; Le Moine, Catherine

    2015-08-01

    The subthalamic nucleus (STN) is a critical component of a complex network controlling motor, associative and limbic functions. High-frequency stimulation (HFS) of the STN is an effective therapy for motor symptoms in Parkinsonian patients and can also reduce their treatment-induced addictive behaviors. Preclinical studies have shown that STN HFS decreases motivation for cocaine while increasing that for food, highlighting its influence on rewarding and motivational circuits. However, the cellular substrates of these effects remain unknown. Our objectives were to characterize the cellular consequences of STN HFS with a special focus on limbic structures and to elucidate how STN HFS may interfere with acute cocaine effects in these brain areas. Male Long-Evans rats were subjected to STN HFS (130 Hz, 60 μs, 50-150 μA) for 30 min before an acute cocaine injection (15 mg/kg) and sacrificed 10 min following the injection. Neuronal reactivity was analyzed through the expression of two immediate early genes (Arc and c-Fos) to decipher cellular responses to STN HFS and cocaine. STN HFS only activated c-Fos in the globus pallidus and the basolateral amygdala, highlighting a possible role on emotional processes via the amygdala, with a limited effect by itself in other structures. Interestingly, and despite some differential effects on Arc and c-Fos expression, STN HFS diminished the c-Fos response induced by acute cocaine in the striatum. By preventing the cellular effect of cocaine in the striatum, STN HFS might thus decrease the reinforcing properties of the drug, which is in line with the inhibitory effect of STN HFS on the rewarding and reinforcing properties of cocaine. PMID:25982833

  6. Alpha reactivity to first names differs in subjects with high and low dream recall frequency.

    PubMed

    Ruby, Perrine; Blochet, Camille; Eichenlaub, Jean-Baptiste; Bertrand, Olivier; Morlet, Dominique; Bidet-Caulet, Aurélie

    2013-01-01

    Studies in cognitive psychology showed that personality (openness to experience, thin boundaries, absorption), creativity, nocturnal awakenings, and attitude toward dreams are significantly related to dream recall frequency (DRF). These results suggest the possibility of neurophysiological trait differences between subjects with high and low DRF. To test this hypothesis we compared sleep characteristics and alpha reactivity to sounds in subjects with high and low DRF using polysomnographic recordings and electroencephalography (EEG). We acquired EEG from 21 channels in 36 healthy subjects while they were presented with a passive auditory oddball paradigm (frequent standard tones, rare deviant tones and very rare first names) during wakefulness and sleep (intensity, 50 dB above the subject's hearing level). Subjects were selected as High-recallers (HR, DRF = 4.42 ± 0.25 SEM, dream recalls per week) and Low-recallers (LR, DRF = 0.25 ± 0.02) using a questionnaire and an interview on sleep and dream habits. Despite the disturbing setup, the subjects' quality of sleep was generally preserved. First names induced a more sustained decrease in alpha activity in HR than in LR at Pz (1000-1200 ms) during wakefulness, but no group difference was found in REM sleep. The current dominant hypothesis proposes that alpha rhythms would be involved in the active inhibition of the brain regions not involved in the ongoing brain operation. According to this hypothesis, a more sustained alpha decrease in HR would reflect a longer release of inhibition, suggesting a deeper processing of complex sounds than in LR during wakefulness. A possibility to explain the absence of group difference during sleep is that increase in alpha power in HR may have resulted in awakenings. Our results support this hypothesis since HR experienced more intra sleep wakefulness than LR (30 ± 4 vs. 14 ± 4 min). As a whole our results support the hypothesis of neurophysiological trait differences in high and

  7. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  8. Derivation and generalization of the dispersion relation of rising-sun magnetron with sectorial and rectangular cavities

    SciTech Connect

    Shi, Di-Fu; Qian, Bao-Liang; Wang, Hong-Gang; Li, Wei

    2013-12-15

    Field analysis method is used to derive the dispersion relation of rising-sun magnetron with sectorial and rectangular cavities. This dispersion relation is then extended to the general case in which the rising-sun magnetron can be with multi-group cavities of different shapes and sizes, and from which the dispersion relations of conventional magnetron, rising-sun magnetron, and magnetron-like device can be obtained directly. The results show that the relative errors between the theoretical and simulation values of the dispersion relation are less than 3%, the relative errors between the theoretical and simulation values of the cutoff frequencies of π mode are less than 2%. In addition, the influences of each structure parameter of the magnetron on the cutoff frequency of π mode and on the mode separation are investigated qualitatively and quantitatively, which may be of great interest to designing a frequency tuning magnetron.

  9. Extending the photoresponse of TiO2 to the visible light region: photoelectrochemical behavior of TiO2 thin films prepared by the radio frequency magnetron sputtering deposition method.

    PubMed

    Kikuchi, Hisashi; Kitano, Masaaki; Takeuchi, Masato; Matsuoka, Masaya; Anpo, Masakazu; Kamat, Prashant V

    2006-03-23

    TiO(2) thin films prepared by a radio frequency magnetron sputtering (RF-MS) deposition method were found to show an enhanced photoelectrochemical response in the visible light region. By controlling the temperature and the gaseous medium during the deposition step, it was possible to control the properties of these films. The photoelectrochemical behavior of the sputtered TiO(2) thin films was compared with that of a commercial TiO(2) sample, and the sputtered films showed higher incident photon to the charge carrier generation efficiency (IPCE of 12.6% at 350 nm) as well as power conversion efficiency (0.33% at 1.84 mW/cm(2)) than the commercial TiO(2) sample. Femtosecond transient absorption spectroscopy experiments have revealed that a major fraction of photogenerated electrons and holes recombine within a few picoseconds, thus limiting photocurrent generation efficiency. The mechanistic insights obtained in the present study should aid in designing semiconductor nanostructures that will maximize the charge separation efficiency and extend the response of the large band gap semiconductor TiO(2) into visible light regions. PMID:16539493

  10. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  11. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  12. A Hollow Cathode Magnetron (HCM)

    SciTech Connect

    S.A. Cohen; Z. Wang

    1998-04-01

    A new type of plasma sputtering device, named the hollow cathode magnetron (HCM), has been developed by surrounding a planar magnetron cathode with a hollow cathode structure (HCS). Operating characteristics of HCMs, current-voltage ( I-V ) curves for fixed discharge pressure and voltage-pressure ( V-p ) curves for fixed cathode current, are measured. Such characteristics are compared with their planar magnetron counterparts. New operation regimes, such as substantially lower pressures (0.3 mTorr), were discovered for HCMs. Cathode erosion profiles show marked improvement over planar magnetron in terms of material utilization. The use of HCMs for thin film deposition are discussed.

  13. Particle-in-Cell (PIC) simulation of CW industrial heating magnetron.

    PubMed

    Andreev, Andrey D; Hendricks, Kyle J

    2010-01-01

    Modern CW industrial heating magnetrons are capable for producing as high as 300 kW of continuous-wave microwave power at frequencies around 900 MHz and are sold commercially [Wynn et al., 2004]. However, to utilize these magnetrons in some specific research and scientific applications being of interest for the Air Force, the necessary adaptation and redesign are required. It means that the detailed knowledge of principles of their operation and full understanding of how the changes of the design parameters affect their operational characteristics are necessary. We have developed and tested computer model of a 10-vane high-power strapped magnetron, which geometrical dimensions and design parameters are close to those of the California Tube Laboratory's commercially produced CWM-75/100L tube. The computer model is built by using the 3-D Improved Concurrent Electromagnetic Particle-in-Cell (ICEPIC) code. Simulations of the strapped magnetron operation are performed and the following operational characteristics are obtained during the simulation: frequency and mode of magnetron oscillations, output microwave power and efficiency of magnetron operation, anode current and anode-cathode voltage dynamics. The developed computer model of a non-relativistic high-power strapped magnetron may be used by the industrial magnetron community for designing following generations of the CW industrial heating high-power magnetrons. PMID:21721323

  14. Analysis and experiments of self-injection magnetron

    NASA Astrophysics Data System (ADS)

    Yi, Zhang; Wen-Jun, Ye; Ping, Yuan; Huan-Cheng, Zhu; Yang, Yang; Ka-Ma, Huang

    2016-04-01

    Magnetrons are widely used in microwave-based industrial applications, which are rapidly developing. However, the coupling between their output frequency and power as well as their wideband spectra restricts their further application. In this work, the output frequency and power of a magnetron are decoupled by self-injection. Moreover, the spectral bandwidth is narrowed, and the phase noise is reduced for most loop phase values. In order to predict the frequency variation with loop phase and injection ratio, a theoretical model based on a circuit equivalent to the magnetron is developed. Furthermore, the developed model also shows that the self-injection magnetron is stabler than the free-running magnetron and that the magnetron’s phase noise can be reduced significantly for most loop phase values. Experimental results confirm the conclusions obtained using the proposed model. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

  15. Magic-T-Coupled Magnetrons

    NASA Technical Reports Server (NTRS)

    Dickinson, R. M.

    1985-01-01

    Outputs of two magnetrons added coherently in scheme based on resonant waveguide coupling and injection phase locking. In addition, filaments are turned off after starting. Overall effect is relatively-inexpensive, lowpower, noisy magnetrons generate clean carrier signals of higher power that ordinarily require more expensive klystrons.

  16. id="content" class="area">

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    Volume 201, Issue14 (November 2004)

    Articles in the Current Issue:

    Rapid Research Note

    Highly (001)-textured WS2-x films prepared by reactive radio frequency magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Seeger, S.; Weiß, V.

    2004-11-01

    Highly (001)-oriented WS2-x films were grown onto oxidized silicon substrates by reactive magnetron sputtering from a metallic tungsten target in argon-hydrogen sulfide mixtures. The best films with respect to the van-der-Waals orientation, i.e. with the (001) planes parallel to the substrate surface, were grown by excitation of the plasma with radio frequency of 27.12 MHz. These films exhibit the largest grains and the lowest film strain. It is shown that this effect is not due to the lower deposition rate at this high excitation frequency. Instead it was found that the lower DC voltage at the sputtering target is advantageous for the film growth since the bombardment of the growing film by highly energetic particles is avoided by this type of plasma excitation.

  17. Growth of crystalline hydroxyapatite thin films at room temperature by tuning the energy of the RF-magnetron sputtering plasma.

    PubMed

    López, Elvis O; Mello, Alexandre; Sendão, Henrique; Costa, Lilian T; Rossi, André L; Ospina, Rogelio O; Borghi, Fabrício F; Silva Filho, José G; Rossi, Alexandre M

    2013-10-01

    Right angle radio frequency magnetron sputtering technique (RAMS) was redesigned to favor the production of high-quality hydroxyapatite (HA) thin coatings for biomedical applications. Stoichiometric HA films with controlled crystallinity, thickness varying from 254 to 540 nm, crystallite mean size of 73 nm, and RMS roughness of 1.7 ± 0.9 nm, were obtained at room temperature by tuning the thermodynamic properties of the plasma sheath energy. The plasma energies were adjusted by using a suitable high magnetic field confinement of 143 mT (1430 G) and a substrate floating potential of 2 V at the substrate-to-magnetron distance of Z = 10 mm and by varying the sputtering geometry, substrate-to-magnetron distance from Z = 5 mm to Z = 18 mm, forwarded RF power and reactive gas pressure. Measurements that were taken with a Langmuir probe showed that the adjusted RAMS geometry generated a plasma with an adequate effective temperature of Teff ≈ 11.8 eV and electron density of 2.0 × 10(15) m(-3) to nucleate nanoclusters and to further crystallize the nanodomains of stoichiometric HA. The deposition mechanism in the RAMS geometry was described by the formation of building units of amorphous calcium phosphate clusters (ACP), the conversion into HA nanodomains and the crystallization of the grain domains with a preferential orientation along the HA [002] direction. PMID:24059686

  18. Recirculating planar magnetrons: simulations and experiment

    SciTech Connect

    Franzi, Matthew; Gilgenbach, Ronald; French, David; Lau, Y.Y.; Simon, David; Hoff, Brad; Luginsland, John W.

    2011-07-01

    The Recirculating Planar Magnetron (RPM) is a novel crossed-field device whose geometry is expected to reduce thermal load, enhance current yield as well as ease the geometric limitations in scaling to high RF frequencies as compared to the conventional cylindrical magnetrons. The RPM has two different adaptations: A. Axial B field and radial E field; B. Radial B field and axial E field. The preliminary configuration (A) to be used in experiments at the University of Michigan consists of two parallel planar sections which join on either end by cylindrical regions to form a concentric extruded ellipse. Similar to conventional magnetrons, a voltage across the AK gap in conjunction with an axial magnetic field provides the electrons with an ExB drift. The device is named RPM because the drifting electrons recirculate from one planar region to the other. The drifting electrons interact with the resonantly tuned slow wave structure on the anode causing spoke formation. These electron spokes drive a RF electric field in the cavities from which RF power may be extracted to Waveguides. The RPM may be designed in either a conventional configuration with the anode on the outside, for simplified extraction, or as an inverted magnetron with the anode at the inner conductor, for fast start-up. Currently, experiments at the Pulsed Power and Microwave Laboratory at the University of Michigan are in the setup and design phase. A conventional RPM with planar cavities is to be installed on the Michigan Electron Long Beam Accelerator (MELBA) and is anticipated to operate at -200kV, 0.2T with a beam current of 1-10 kA at 1GHz. The conventional RPM consists of 12 identical planar cavities, 6 on each planar side, with simulated quality factor of 20.

  19. REGENERATION AND REACTIVATION OF CARBON ADSORBENTS BY RADIO FREQUENCY INDUCTION HEATING

    EPA Science Inventory

    1. Electrical Properties of Adsorbents: We measured the electric permittivity of four commercially available carbon adsorbents (supplied by Wesvaco Inc) over the radio frequency range (1 to 40 MHz). Westvaco is by far the largest volume supplier of activated carbon...

  20. Nonsputtering impulse magnetron discharge

    SciTech Connect

    Khodachenko, G. V.; Mozgrin, D. V.; Fetisov, I. K.; Stepanova, T. V.

    2012-01-15

    Experiments with quasi-steady high-current discharges in crossed E Multiplication-Sign B fields in various gases (Ar, N{sub 2}, H{sub 2}, and SF{sub 6}) and gas mixtures (Ar/SF{sub 6} and Ar/O{sub 2}) at pressures from 10{sup -3} to 5 Torr in discharge systems with different configurations of electric and magnetic fields revealed a specific type of stable low-voltage discharge that does not transform into an arc. This type of discharge came to be known as a high-current diffuse discharge and, later, a nonsputtering impulse magnetron discharge. This paper presents results from experimental studies of the plasma parameters (the electron temperature, the plasma density, and the temperature of ions and atoms of the plasma-forming gas) of a high-current low-pressure diffuse discharge in crossed E Multiplication-Sign B fields.

  1. Controlling Fluences of Reactive Species Produced by Multipulse DBDs onto Wet Tissue: Frequency and Liquid Thickness

    NASA Astrophysics Data System (ADS)

    Tian, Wei; Kushner, Mark J.

    2015-09-01

    Tissue covered by a thin liquid layer treated by atmospheric pressure plasmas for biomedical applications ultimately requires a reproducible protocol for human healthcare. The outcomes of wet tissue treatment by dielectric barrier discharges (DBDs) depend on the plasma dose which determines the integral fluences of radicals and ions onto the tissue. These fluences are controlled in part by frequency and liquid thickness. In this paper, we report on results from a computational investigation of multipulse DBDs interacting with wet tissue. The DBDs were simulated for 100 stationary or random streamers at different repetition rates and liquid thicknesses followed by 10 s to 2 min of afterglow. At 100 Hz, NOaq and OHaq are mixed by randomly striking streamers, although they have different rates of solvation. NOaq is nearly completely consumed by reactions with OHaq at the liquid surface. Only H2O2aq, produced through OHaq mutual reactions, survives to reach the tissue. After 100 pulses, the liquid becomes ozone-rich, in which the nitrous ion, NO2-aq, is converted to the nitric ion, NO3-aq. Reducing the pulse frequency to 10 Hz results in significant fluence of NOaq to the tissue as NOaq can escape during the interpulse period from the liquid surface where OHaq is formed. For the same reason, NO2-aq can also reach deeper into the liquid at lower frequency. Frequency and thickness of the liquid are methods to control the plasma produced aqueous species to the underlying tissue. Work supported by DOE (DE-SC0001319) and NSF (CHE-1124724).

  2. Reactive hydroxyl radical-driven oral bacterial inactivation by radio frequency atmospheric plasma

    NASA Astrophysics Data System (ADS)

    Kang, Sung Kil; Choi, Myeong Yeol; Koo, Il Gyo; Kim, Paul Y.; Kim, Yoonsun; Kim, Gon Jun; Mohamed, Abdel-Aleam H.; Collins, George J.; Lee, Jae Koo

    2011-04-01

    We demonstrated bacterial (Streptococcus mutans) inactivation by a radio frequency power driven atmospheric pressure plasma torch with H2O2 entrained in the feedstock gas. Optical emission spectroscopy identified substantial excited state •OH generation inside the plasma and relative •OH formation was verified by optical absorption. The bacterial inactivation rate increased with increasing •OH generation and reached a maximum 5-log10 reduction with 0.6% H2O2 vapor. Generation of large amounts of toxic ozone is drawback of plasma bacterial inactivation, thus it is significant that the ozone concentration falls within recommended safe allowable levels with addition of H2O2 vapor to the plasma.

  3. Reactive hydroxyl radical-driven oral bacterial inactivation by radio frequency atmospheric plasma

    SciTech Connect

    Kang, Sung Kil; Lee, Jae Koo; Choi, Myeong Yeol; Koo, Il Gyo; Kim, Paul Y.; Kim, Yoonsun; Kim, Gon Jun; Collins, George J.; Mohamed, Abdel-Aleam H.

    2011-04-04

    We demonstrated bacterial (Streptococcus mutans) inactivation by a radio frequency power driven atmospheric pressure plasma torch with H{sub 2}O{sub 2} entrained in the feedstock gas. Optical emission spectroscopy identified substantial excited state OH generation inside the plasma and relative OH formation was verified by optical absorption. The bacterial inactivation rate increased with increasing OH generation and reached a maximum 5-log{sub 10} reduction with 0.6%H{sub 2}O{sub 2} vapor. Generation of large amounts of toxic ozone is drawback of plasma bacterial inactivation, thus it is significant that the ozone concentration falls within recommended safe allowable levels with addition of H{sub 2}O{sub 2} vapor to the plasma.

  4. Modulated Electron Cyclotron Drift Instability in a High-Power Pulsed Magnetron Discharge

    NASA Astrophysics Data System (ADS)

    Tsikata, Sedina; Minea, Tiberiu

    2015-05-01

    The electron cyclotron drift instability, implicated in electron heating and anomalous transport, is detected in the plasma of a planar magnetron. Electron density fluctuations associated with the mode are identified via an adapted coherent Thomson scattering diagnostic, under direct current and high-power pulsed magnetron operation. Time-resolved analysis of the mode amplitude reveals that the instability, found at MHz frequencies and millimeter scales, also exhibits a kHz-scale modulation consistent with the observation of larger-scale plasma density nonuniformities, such as the rotating spoke. Sharply collimated axial fluctuations observed at the magnetron axis are consistent with the presence of escaping electrons in a region where the magnetic and electric fields are antiparallel. These results distinguish aspects of magnetron physics from other plasma sources of similar geometry, such as the Hall thruster, and broaden the scope of instabilities which may be considered to dictate magnetron plasma features.

  5. Modulated electron cyclotron drift instability in a high-power pulsed magnetron discharge.

    PubMed

    Tsikata, Sedina; Minea, Tiberiu

    2015-05-01

    The electron cyclotron drift instability, implicated in electron heating and anomalous transport, is detected in the plasma of a planar magnetron. Electron density fluctuations associated with the mode are identified via an adapted coherent Thomson scattering diagnostic, under direct current and high-power pulsed magnetron operation. Time-resolved analysis of the mode amplitude reveals that the instability, found at MHz frequencies and millimeter scales, also exhibits a kHz-scale modulation consistent with the observation of larger-scale plasma density nonuniformities, such as the rotating spoke. Sharply collimated axial fluctuations observed at the magnetron axis are consistent with the presence of escaping electrons in a region where the magnetic and electric fields are antiparallel. These results distinguish aspects of magnetron physics from other plasma sources of similar geometry, such as the Hall thruster, and broaden the scope of instabilities which may be considered to dictate magnetron plasma features. PMID:26001007

  6. Automation of high-frequency sampling of environmental waters for reactive species

    NASA Astrophysics Data System (ADS)

    Kim, H.; Bishop, J. K.; Wood, T.; Fung, I.; Fong, M.

    2011-12-01

    Trace metals, particularly iron and manganese, play a critical role in some ecosystems as a limiting factor to determine primary productivity, in geochemistry, especially redox chemistry as important electron donors and acceptors, and in aquatic environments as carriers of contaminant transport. Dynamics of trace metals are closely related to various hydrologic events such as rainfall. Storm flow triggers dramatic changes of both dissolved and particulate trace metals concentrations and affects other important environmental parameters linked to trace metal behavior such as dissolved organic carbon (DOC). To improve our understanding of behaviors of trace metals and underlying processes, water chemistry information must be collected for an adequately long period of time at higher frequency than conventional manual sampling (e.g. weekly, biweekly). In this study, we developed an automated sampling system to document the dynamics of trace metals, focusing on Fe and Mn, and DOC for a multiple-year high-frequency geochemistry time series in a small catchment, called Rivendell located at Angelo Coast Range Reserve, California. We are sampling ground and streamwater using the automated sampling system in daily-frequency and the condition of the site is substantially variable from season to season. The ranges of pH of ground and streamwater are pH 5 - 7 and pH 7.8 - 8.3, respectively. DOC is usually sub-ppm, but during rain events, it increases by an order of magnitude. The automated sampling system focuses on two aspects- 1) a modified design of sampler to improve sample integrity for trace metals and DOC and 2) remote controlling system to update sampling volume and timing according to hydrological conditions. To maintain sample integrity, the developed method employed gravity filtering using large volume syringes (140mL) and syringe filters connected to a set of polypropylene bottles and a borosilicate bottle via Teflon tubing. Without filtration, in a few days, the

  7. Theoretical investigation of the dielectric-filled relativistic magnetron

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoyu; Fan, Yuwei; Shu, Ting; Shi, Difu

    2016-01-01

    The fundamental mode frequency of a dielectric-filled relativistic magnetron is studied theoretically by the method of the equivalent circuit, and an exact fundamental mode frequency formula is derived. To prove the validity of the theoretical formula, simulation investigation is performed. The simulation results agree well with the theoretical formula, and the relative error does not exceed 3%. The comparative results verify the creditability of the theoretical formula.

  8. Tracking the Magnetron Motion in FT-ICR Mass Spectrometry

    NASA Astrophysics Data System (ADS)

    Jertz, Roland; Friedrich, Jochen; Kriete, Claudia; Nikolaev, Evgeny N.; Baykut, Gökhan

    2015-08-01

    In Fourier transform ion cyclotron resonance spectrometry (FT-ICR MS) the ion magnetron motion is not usually directly measured, yet its contribution to the performance of the FT-ICR cell is important. Its presence is manifested primarily by the appearance of even-numbered harmonics in the spectra. In this work, the relationship between the ion magnetron motion in the ICR cell and the intensities of the second harmonic signal and its sideband peak in the FT-ICR spectrum is studied. Ion motion simulations show that during a cyclotron motion excitation of ions which are offset to the cell axis, a position-dependent radial drift of the cyclotron center takes place. This radial drift can be directed outwards if the ion is initially offset towards one of the detection electrodes, or it can be directed inwards if the ion is initially offset towards one of the excitation electrodes. Consequently, a magnetron orbit diameter can increase or decrease during a resonant cyclotron excitation. A method has been developed to study this behavior of the magnetron motion by acquiring a series of FT-ICR spectra using varied post-capture delay (PCD) time intervals. PCD is the delay time after the capture of the ions in the cell before the cyclotron excitation of the ion is started. Plotting the relative intensity of the second harmonic sideband peak versus the PCD in each mass spectrum leads to an oscillating "PCD curve". The position and height of minima and maxima of this curve can be used to interpret the size and the position of the magnetron orbit. Ion motion simulations show that an off-axis magnetron orbit generates even-numbered harmonic peaks with sidebands at a distance of one magnetron frequency and multiples of it. This magnetron offset is due to a radial offset of the electric field axis versus the geometric cell axis. In this work, we also show how this offset of the radial electric field center can be corrected by applying appropriate DC correction voltages to the

  9. Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

    NASA Astrophysics Data System (ADS)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2015-01-01

    The effects of using radio-frequency (RF)-superimposed direct-current (DC) magnetron sputtering deposition on the structural, electrical, and optical properties of aluminum-doped ZnO (AZO)-based highly transparent conducting oxide films have been examined. AZO films were deposited on heated non-alkaline glass substrates (200 °C) using ZnO:Al2O3 (2 wt. % Al2O3) ceramic oxide targets with the total power varied from 150 to 300 W, and at various RF to DC power ratios, AZO films deposited by a mixed approach with the RF to the total power ratio of 0.14 showed the lowest resistivity of 2.47 × 10-4 Ω cm with the highest carrier concentration of 6.88 × 1020 cm-3 and the highest Hall mobility (μH) of 36.8 cm2/Vs together with the maximum value of an average transmittance in the visible spectral range from 400 to 700 nm. From the analysis of optical data based on the simple Drude model combined with the Tauc-Lorentz model and the results of Hall effect measurements, the optical mobility (μopt) was determined. A comparison of μopt with μH clarified the effects of the mixed approach not only on the reduction of the grain boundary contribution to the carrier transport but also on retaining high carrier mobility of in-grains for the AZO films.

  10. Effects of radio frequency power on the chemical bonding, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Xu, L.; Tian, H. W.; Jin, Z. S.; Lv, X. Y.; Zheng, W. T.

    2006-12-01

    Germanium carbide (Ge1-xCx) films have been prepared by radio frequency (RF) reactive sputtering of a pure Ge(111) target in a CH4/Ar mixture discharge, and their composition, chemical bonding, optical and mechanical properties have been investigated as a function of RF power. The relationship between the chemical bonding and the optical and mechanical properties of the Ge1-xCx films has been explored. The results show that the refractive index of Ge1-xCx films increases from 1.9 to 3.2 and the optical gap decreases from 1.9 to 1.0 eV as RF power increases from 80 to 250 W, which is due to an increase in the germanium content with increasing RF power. Also, it is found that the hardness of Ge1-xCx films increases with increasing RF power, which can be attributed to an increase in the fraction of sp3 Ge-C bonds at the expense of the sp2 C-C bonds in the Ge1-xCx films.

  11. Double-sided Relativistic Magnetron

    NASA Astrophysics Data System (ADS)

    Agafonov, A. V.; Krastelev, E. G.

    1997-05-01

    A new scheme of a symmetricaly powered relativistic magnetron and several methods of localised electron flow forming in an interaction region are proposed to increase an efficiency of relativistic magnetrons. As will be shown, a very important reason is the effect of nonsymmetric feeding of power from one side of a magnetron, which is typical for experiments. One-sided powering leads to the axial drift of electrons, to the transformation of transverse velocities of electrons to longitudinal one and to the generation of a parasitic e-beam which does not take part in energy exchange between electrons and waves at all. A special driver was designed for double-sided powering of relativistic magnetrons. The proposed system is compact, rigid and capable of reliable operation at high repetition rates, which is advantageous for many applications. Several smooth-bore magnetrons were tested by means of computer simulations using PIC code KARAT. The results showed a dramatical difference between the dynamics of electron flow for one- and two-sided power feeding of a structure under test. Design of a driver and computer simulation results are presented.

  12. Wurtzite structure Sc{sub 1-x}Al{sub x}N solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations

    SciTech Connect

    Hoeglund, Carina; Birch, Jens; Bareno, Javier; Persson, Per O. A.; Wingqvist, Gunilla; Zukauskaite, Agne; Hultman, Lars; Alling, Bjoern; Czigany, Zsolt

    2010-06-15

    AlN(0001) was alloyed with ScN with molar fractions up to {approx}22%, while retaining a single-crystal wurtzite (w-) structure and with lattice parameters matching calculated values. Material synthesis was realized by magnetron sputter epitaxy of thin films starting from optimal conditions for the formation of w-AlN onto lattice-matched w-AlN seed layers on Al{sub 2}O{sub 3}(0001) and MgO(111) substrates. Films with ScN contents between 23% and {approx}50% exhibit phase separation into nanocrystalline ScN and AlN, while ScN-rich growth conditions yield a transformation to rocksalt structure Sc{sub 1-x}Al{sub x}N(111) films. The experimental results are analyzed with ion beam analysis, x-ray diffraction, and transmission electron microscopy, together with ab initio calculations of mixing enthalpies and lattice parameters of solid solutions in wurtzite, rocksalt, and layered hexagonal phases.

  13. Analytic formulas for magnetron characteristic curves

    SciTech Connect

    Riyopoulos, S.

    1995-12-31

    A closed non-linear set of equations is obtained based on the guiding center fluid model to describe steady-state magnetron operation. Spoke charge effects are included self-consistently, by introducing a mean-field approximation so that the effective AC potential preserves the geometric similarity with the vacuum solutions. New characteristic equations, relating the anode current 1 and the RF power P to the applied DC voltage V at given RF frequency, are obtained. Previously obtained V-I equations disagree with experiments in that (a) anode current and RF power go to zero when the resonance condition V = V{sub s} is met, (b) the operation voltage V is a double-valued function of the current I; there exist two nearly symmetric operation points around V{sub s} at the same current I. Yet magnetrons, and the related crossed-field amplifiers, are known to exhibit stable operation with single valued V-I characteristics well below V{sub s}. Although zero gain at synchronism applies to other microwave devices (TWT`s, FEL`s), experimental results and particle simulations of crossed field devices suggest otherwise. The new formulas show reasonable agreement with experiments.

  14. Comparative study of properties between a-GeC:H and a-SiC:H films prepared by radio-frequency reactive sputtering in methane

    NASA Astrophysics Data System (ADS)

    Saito, N.; Yamaguchi, T.; Nakaaki, I.

    1995-09-01

    Hydrogenated amorphous germanium-carbon (a-GeC:H) and silicon-carbon (a-SiC:H) films were deposited by reactive magnetron sputtering of Ge and Si targets in a methane argon gas mixture. The effect of rf power on the structural, optical, and electrical properties of the films was investigated. The carbon content in a-SiC:H films is larger than in a-GeC:H for the same deposition condition, and it decreases with increasing rf power. The intensity of the carbon-related bonds, the optical band gap, and the activation energy of dc conductivity of both films decreases with decreasing carbon content. The temperature dependence of dc conductivity of a-SiC:H exhibits activated-type conduction, whereas hopping conduction is predominant in a-GeC:H. Hydrogen concentration and H bonding ratio are examined, indicating that the termination of the dangling bond by hydrogen is more effective in a a-SiC:H films than a-GeC:H films.

  15. Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

    NASA Astrophysics Data System (ADS)

    Hu, C. Q.; Zhu, J. Q.; Zheng, W. T.; Han, J. C.

    2009-01-01

    The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge 1- xC x) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH 4/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures ( Ta) above 300 °C decreases, whereas that of C-H bonds show a decrease only when Ta exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at Ta above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge 1- xC x films are almost constant against Ta, which can be ascribed to the unchanged ratios of Ge/C and sp 2-C/sp 3-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge 1- xC x double-layer film on ZnS substrate is still maintained after annealing at 700 °C.

  16. P-type doping of hydrogenated amorphous silicon films with boron by reactive radio-frequency co-sputtering

    NASA Astrophysics Data System (ADS)

    Ohmura, Y.; Takahashi, M.; Suzuki, M.; Sakamoto, N.; Meguro, T.

    2001-12-01

    B has been successfully doped into the hydrogenated amorphous Si films without using explosive and/or toxic gases SiH 4 or B 2H 6 by reactive radio-frequency co-sputtering. The target used for co-sputtering was a composite target composed of a B-doped Si wafer and B chips attached on the Si wafer with silver powder bond. The maximum area fraction of B chips used was 0.11. Argon and hydrogen pressures were 5×10 -3 and 5×10 -4 Torr, respectively. Substrates were kept at 200°C or 250°C during sputtering. The maximum B concentration in the film obtained was 2×10 19 cm -3 from secondary ion mass spectroscopy measurement. Films with resistivity of 10 4-10 5 Ω cm were obtained, which was low for the above acceptor concentration, compared with other group III impurities doping, indicating the high doping efficiency of B. A heterostructure, which was prepared by co-sputtering these B-doped films on an n-type crystalline Si, shows a good rectification characteristic. A small photovoltaic effect is also observed.

  17. Comparative study between atmospheric microwave and low-frequency plasmas: Production efficiency of reactive species and their effectiveness

    NASA Astrophysics Data System (ADS)

    Won, Im Hee; Kim, Myoung Soo; Kim, Ho Young; Shin, Hyun Kook; Kwon, Hyoung Cheol; Sim, Jae Yoon; Lee, Jae Koo

    2014-01-01

    The characteristics of low-frequency (LF) and microwave-powered plasmas were investigated. The optical emission of these two plasmas indicated that more chemicals were generated by microwave plasma than by LF plasma with the intensities being higher by factors of about 9, 3, 5, and 1.6 for OH (309 nm), O (777 nm), NO (247 nm), and Ca2+ (290 nm), respectively. Application experiments were also conducted. A steel plate became hydrophilic after 45 s of microwave plasma treatment. This is more than ten times faster than in the case of LF plasma treatment, an action related to the generation of reactive species (e.g., OH, O, and NO) as measured by optical emission spectroscopy (OES). Ca2+ generation was verified by blood coagulation experiment. Microwave-plasma-induced coagulation was twice faster than LF-plasma-induced coagulation. Simulation results that explain the chemical generation in microwave plasma were also included. High-energy electrons were considered a major factor for microwave plasma characteristics.

  18. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    NASA Astrophysics Data System (ADS)

    Chudinova, E.; Surmeneva, M.; Koptioug, A.; Scoglund, P.; Surmenev, R.

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds.

  19. Linear ion source with magnetron hollow cathode discharge

    SciTech Connect

    Tang, D.L.; Pu, S.H.; Wang, L.S.; Qiu, X.M.; Chu, Paul K.

    2005-11-15

    A linear ion source with magnetron hollow cathode discharge is described in this paper. The linear ion source is based on an anode layer thruster with closed-drift electrons that move in a closed path in the ExB fields. An open slit configuration is designed at the end of the ion source for the extraction of the linear ion beam produced by the magnetron hollow cathode discharge. The special configurations enable uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. The ion current density and uniformity were experimentally evaluated. Using the ion source, surface modification was conducted on polyethylene terephthalate polymer films to improve the adhesion strength with ZnS coatings.

  20. Fixed costs of providing ancillary services from power plants: Reactive supply and voltage control, regulation and frequency response, operating reserve--spinning. Final report

    SciTech Connect

    Boyle, R.; Kure-Jensen, J.

    1998-12-01

    This report describes methodologies to determine the fixed costs for a steam cycle generating unit to participate in Reactive Supply and Voltage Control (RS-VC), Regulation and Frequency Response (RFR), and Operating Reserve-Spinning (ORS) services. It is intended for use by a Generator of electricity who is planning to offer these ancillary services in a competitive market. The methodology is based on common steam power plant engineering and economic principles. Reactive supply and voltage control provides reactive supply through changes to generator reactive output to maintain acceptable transmission system voltages and facilitate electricity transfers and provides the ability to continually adjust transmission system voltage in response to system changes. Regulation and frequency response service include all rapid load changes whether their purpose is to meet the instantaneous load demand, to balance control area supply resources with load, or to maintain frequency. Spinning reserve is provided by generating units that are on-line and loaded at less than maximum output. They are available to serve load immediately in an unexpected contingency such as an unplanned outage of a generating unit.

  1. Hollow target magnetron-sputter-type solid material ion source.

    PubMed

    Sasaki, D; Ieki, S; Kasuya, T; Wada, M

    2012-02-01

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al(+) and Ar(+) ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 μA, with the Al(+) ion beam occupying 30% of the total beam current. PMID:22380320

  2. Calcium phosphate coatings produced by radiofrequency magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Bolbasov, E. N.; Zheravin, A. A.; Klimov, I. A.; Kulbakin, D. E.; Perelmuter, V. M.; Tverdokhlebov, S. I.; Cherdyntseva, N. V.; Choinzonov, E. L.

    2016-08-01

    Calcium phosphate coatings on titanium implants surface, produced by radio frequency (RF) magnetron sputtering method with hydroxyapatite solid target were investigated. It was found that produced coatings are calcium deficient compared to stoichiometric hydroxyapatite. The surface of the coatings is highly rough at the nanoscale and highly elastic. In vivo experiments on rats revealed that titanium implants with the calcium phosphate coatings do not cause negative tissue reaction after 6 months incubation period.

  3. Hollow target magnetron-sputter-type solid material ion source

    SciTech Connect

    Sasaki, D.; Ieki, S.; Kasuya, T.; Wada, M.

    2012-02-15

    A thin-walled aluminum (Al) hollow electrode has been inserted into an ion source to serve as an electrode for a radio frequency magnetron discharge. The produced plasma stabilized by argon (Ar) gas sputters the Al electrode to form a beam of Al{sup +} and Ar{sup +} ions. The total beam current extracted through a 3 mm diameter extraction hole has been 50 {mu}A, with the Al{sup +} ion beam occupying 30% of the total beam current.

  4. Effect of microstructure on the nanomechanical properties of TiVCrZrAl nitride films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chang, Zue-Chin; Liang, Shih-Chang; Han, Sheng

    2011-09-01

    This paper describes the nanoindentation behavior of TiVCrZrAl nitride films grown on Si substrates by means of reactive radio-frequency magnetron sputtering at growth temperatures from 150 to 300 °C. We used cross-sectional transmission electron microscopy and X-ray diffraction to analyze the microstructure and crystallinity and nanoindentation techniques to study the hardness and elastic modulus. We found that a face-centered-cubic solid-solution structure with strong (2 0 0), (1 1 1), (2 2 0), and (3 1 1) orientations were revealed by X-ray diffraction. Upon increasing the growth temperature of the films, the hardness and elastic modulus increased to maximum values of 15.2 and 203.5 GPa, respectively.

  5. Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

    PubMed

    Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed. PMID:26665074

  6. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    PubMed Central

    Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    Summary We investigate the effect of the thickness of the silicon nitride (SiNx) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed. PMID:26665074

  7. Electrical and optical characterization of a pulsed discharge in an inverted cylindrical magnetron

    NASA Astrophysics Data System (ADS)

    Vozniy, O. V.; Duday, D.; Luciu, I.; Wirtz, T.

    2014-08-01

    An inverted cylindrical magnetron operating in pulsed mode was developed, with a rotating unbalanced system of magnets. The magnetic field was calculated using the finite integration technique in order to determine the optimal anode-to-cathode distance inside the reactor. A cylindrical titanium target was used for our experiments. The average power input was varied between 500 and 1300 W leading to low power densities varying between 0.9 and 2.4 W cm-2. The frequency was fixed at a low value of 250 Hz, suitable for depositing Ti and TiO2 at low temperatures on polymer substrates. Long on-time pulses (400 µs) were used in order to reach interesting deposition rates (>1 µm h-1). A transition from metallic to oxide mode was observed for all power inputs. Time-resolved optical emission spectroscopy was used for the investigation of plasma dynamics during the on-time pulse in both metallic and reactive regimes. Three phases of discharge evolution were identified in the metallic mode: the Ar-dominated phase, followed by a transition zone and a Ti-dominated phase. The emission of Ti species completely disappeared in the reactive mode, associated with the fact that titanium atoms left the target surface as TiOx molecular fragments. In conclusion, the deposition system and conditions used resulted in a new mode of TiO2 deposition.

  8. PIC simulation of high efficiency and high power 14 vane industrial magnetron

    NASA Astrophysics Data System (ADS)

    Vyas, Sandeep; Maurya, Shivendra; Singh, V. V. P.

    2016-03-01

    This paper presents a 3D Particle in cell (PIC) simulation of a CW 2.450±0.050 GHz 10 kW industrial magnetron. The electromagnetic and PIC simulation of magnetron has been carried out using CST microwave studio andCST particle studio. A virtual prototype of 14 vane magnetron has been simulated on computer. The cold frequency of magnetron is found 2.495 GHz. The unloaded quality factor and circuit efficiency are found 1970 and 92% from electromagnetic simulation. The output power is achieved 12.4 KW for anode voltage 12.7 kV and magnetic field 2900 Gauss. The anode current is found anode current 1.22 A. The total efficiency is 78.76 %.

  9. Sum-Frequency Generation Spectroscopy for Studying Organic Layers at Water-Air Interfaces: Microlayer Monitoring and Surface Reactivity

    NASA Astrophysics Data System (ADS)

    Laß, Kristian; Kleber, Joscha; Bange, Hermann; Friedrichs, Gernot

    2015-04-01

    The sea surface microlayer, according to commonly accepted terminology, comprises the topmost millimetre of the oceanic water column. It is often enriched with organic matter and is directly influenced by sunlight exposure and gas exchange with the atmosphere, hence making it a place for active biochemistry and photochemistry as well as for heterogeneous reactions. In addition, surface active material either is formed or accumulates directly at the air-water interface and gives rise to very thin layers, sometimes down to monomolecular thickness. This "sea surface nanolayer" determines the viscoelastic properties of the seawater surface and thus may impact the turbulent air-sea gas exchange rates. To this effect, this small scale layer presumably plays an important role for large scale changes of atmospheric trace gas concentrations (e.g., by modulating the ocean carbon sink characteristics) with possible implications for coupled climate models. To date, detailed knowledge about the composition, structure, and reactivity of the sea surface nanolayer is still scarce. Due to its small vertical dimension and the small amount of material, this surfactant layer is very difficult to separate and analyse. A way out is the application of second-order nonlinear optical methods, which make a direct surface-specific and background-free detection of this interfacial layer possible. In recent years, we have introduced the use of vibrational sum frequency generation (VSFG) spectroscopy to gain insight into natural and artificial organic monolayers at the air-water interface. In this contribution, the application of VSFG spectroscopy for the analysis of the sea surface nanolayer will be illustrated. Resulting spectra are interpreted in terms of layer composition and surfactant classes, in particular with respect to carbohydrate-containing molecules such as glycolipids. The partitioning of the detected surfactants into soluble and non-soluble ("wet" and "dry") surfactants will be

  10. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-02-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  11. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  12. A deletion mutant of the latency-associated transcript of herpes simplex virus type 1 reactivates from the latent state with reduced frequency.

    PubMed Central

    Leib, D A; Bogard, C L; Kosz-Vnenchak, M; Hicks, K A; Coen, D M; Knipe, D M; Schaffer, P A

    1989-01-01

    We have generated and characterized a deletion mutant of herpes simplex virus type-1, dlLAT1.8, which lacks the putative promoter region, transcriptional start site, and 1,015 base pairs of the DNA sequences specifying the latency-associated transcripts (LATs). When tested in a CD-1 mouse ocular model, dlLAT1.8 was replication competent in the eye and in ganglia during acute infection but reactivated from explant cultures of ganglia with reduced efficiency (49%) relative to those of wild-type and marker-rescued viruses (94 and 85%, respectively) despite the fact that levels of mutant viral DNA in ganglia during latent infection were comparable to wild-type levels. The neurovirulence of KOS was not significantly altered by the removal of sequences specifying the LATs, as judged by numbers of animals dying on or before 30 days postinfection. Examination of ganglia latently infected with dlLAT1.8 by in situ hybridization revealed no LAT expression. The genotype of reactivated virus was identical to that of input dlLAT1.8 virus as judged by Southern blot analysis. These studies suggest that although the LATs are not essential for the establishment and reactivation of latency in our model, they may play a role in determining the frequency of reactivation of virus from the latent state. Images PMID:2542601

  13. Tumor- and Neoantigen-Reactive T-cell Receptors Can Be Identified Based on Their Frequency in Fresh Tumor.

    PubMed

    Pasetto, Anna; Gros, Alena; Robbins, Paul F; Deniger, Drew C; Prickett, Todd D; Matus-Nicodemos, Rodrigo; Douek, Daniel C; Howie, Bryan; Robins, Harlan; Parkhurst, Maria R; Gartner, Jared; Trebska-McGowan, Katarzyna; Crystal, Jessica S; Rosenberg, Steven A

    2016-09-01

    Adoptive transfer of T cells with engineered T-cell receptor (TCR) genes that target tumor-specific antigens can mediate cancer regression. Accumulating evidence suggests that the clinical success of many immunotherapies is mediated by T cells targeting mutated neoantigens unique to the patient. We hypothesized that the most frequent TCR clonotypes infiltrating the tumor were reactive against tumor antigens. To test this hypothesis, we developed a multistep strategy that involved TCRB deep sequencing of the CD8(+)PD-1(+) T-cell subset, matching of TCRA-TCRB pairs by pairSEQ and single-cell RT-PCR, followed by testing of the TCRs for tumor-antigen specificity. Analysis of 12 fresh metastatic melanomas revealed that in 11 samples, up to 5 tumor-reactive TCRs were present in the 5 most frequently occurring clonotypes, which included reactivity against neoantigens. These data show the feasibility of developing a rapid, personalized TCR-gene therapy approach that targets the unique set of antigens presented by the autologous tumor without the need to identify their immunologic reactivity. Cancer Immunol Res; 4(9); 734-43. ©2016 AACR. PMID:27354337

  14. Investigating the role of hydrogen in silicon deposition using an energy-resolved mass spectrometer and a Langmuir probe in an Ar/H{sub 2} radio frequency magnetron discharge

    SciTech Connect

    Mensah, S. L.; Naseem, Hameed H.; Abu-Safe, Husam; Gordon, M. H.

    2012-07-15

    The plasma parameters and ion energy distributions (IED) of the dominant species in an Ar-H{sub 2} discharge are investigated with an energy resolved mass spectrometer and a Langmuir probe. The plasmas are generated in a conventional magnetron chamber powered at 150 W, 13.56 MHz at hydrogen flow rates ranging from 0 to 25 sccm with a fixed argon gas flow rate of 15 sccm. Various H{sub n}{sup +}, SiH{sub n}{sup +}, SiH{sub n} fragments (with n = 1, 2, 3) together with Ar{sup +} and ArH{sup +} species are detected in the discharge. The most important species for the film deposition is SiH{sub n} (with n = 0, 1, 2). H fragments affect the hydrogen content in the material. The flux of Ar{sup +} decreases and the flux of ArH{sup +} increases when the hydrogen flow rate is increased; however, both fluxes saturate at hydrogen flow rates above 15 sccm. Electron density, n{sub e}, electron energy, T{sub e}, and ion density, n{sub i}, are estimated from the Langmuir probe data. T{sub e} is below 1.2 eV at hydrogen flow rates below 8 sccm, and about 2 eV at flow rates above 8 sccm. n{sub e} and n{sub i} decrease with increased hydrogen flow but the ratio of n{sub i} to n{sub e} increases. The formation of H{sup +} ions with energies above 36 eV and electrons with energies greater than 2 eV contributes to the decrease in hydrogen content at hydrogen flow rates above 8 sccm. Analysis of the IEDs indicates an inter-dependence of the species and their contribution to the thin film growth and properties.

  15. Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ellmer, K.; Mientus, R.; Weiß, V.; Rossner, H.

    2001-07-01

    A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3° and 10°, is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

  16. High frequency of autoantibodies bearing cross-reactive idiotopes among hybridomas using VH7183 genes prepared from normal and autoimmune murine strains.

    PubMed Central

    Bellon, B; Manheimer-Lory, A; Monestier, M; Moran, T; Dimitriu-Bona, A; Alt, F; Bona, C

    1987-01-01

    Hybridomas obtained by in vitro stimulation with lipopolysaccharides (LPS) of BALB/c, MRL/lpr, and NZB splenocytes were selected for expression of VH7183 by hybridization using slot blotting. Northern blot analysis showed that the majority of hybrids produce a full length message complementary to the VH7183 probe. The frequency of VH7183 hybridomas was significantly higher in NZB mice as compared with BALB/c mice. Using multiple binding assays, 60% of the total antibodies encoded by VH7183 were specific for self-epitopes. Finally, the vast majority express cross-reactive idiotypes borne by autoantibodies of various specificities. Images PMID:3558816

  17. Low frequency sonochemical synthesis of nanoporous amorphous manganese dioxide (MnO2) and adsorption of remazol reactive dye

    NASA Astrophysics Data System (ADS)

    Hasan, Siti Zubaidah; Yusop, Muhammad Rahimi; Othman, Mohamed Rozali

    2015-09-01

    Nanoporous amorphous-MnO2 was synthesized by sonochemical process (sonication) on the solid manganese (II) acetate tetrahydrate (Mn(CH3COO)2.4H2O) in 0.1 M KMnO4. The product was characterized by X-ray diffraction (XRD), morphology of the material was scanned by Field Emission Scanning Electron Microscopy (FE-SEM) and absorptions of MnO2 bonding was characterized by Fourier Transform Infra-Red Spectrometer (FT-IR). Remazol reactive dye or Red 3BS, was used in the adsorption study using nanoporous amorphous-MnO2. In batch experiment, 10 ppm of Remazol reactive dye was used and experiment was carried out at room temperature. Adsorption of Remazol dye on 0.2g synthesized nanoporous amorphous-MnO2 showed 99 - 100% decolorization.

  18. Low frequency sonochemical synthesis of nanoporous amorphous manganese dioxide (MnO{sub 2}) and adsorption of remazol reactive dye

    SciTech Connect

    Hasan, Siti Zubaidah; Yusop, Muhammad Rahimi; Othman, Mohamed Rozali

    2015-09-25

    Nanoporous amorphous-MnO{sub 2} was synthesized by sonochemical process (sonication) on the solid manganese (II) acetate tetrahydrate (Mn(CH{sub 3}COO){sub 2}.4H{sub 2}O) in 0.1 M KMnO{sub 4}. The product was characterized by X-ray diffraction (XRD), morphology of the material was scanned by Field Emission Scanning Electron Microscopy (FE-SEM) and absorptions of MnO{sub 2} bonding was characterized by Fourier Transform Infra-Red Spectrometer (FT-IR). Remazol reactive dye or Red 3BS, was used in the adsorption study using nanoporous amorphous-MnO{sub 2}. In batch experiment, 10 ppm of Remazol reactive dye was used and experiment was carried out at room temperature. Adsorption of Remazol dye on 0.2g synthesized nanoporous amorphous-MnO{sub 2} showed 99 – 100% decolorization.

  19. Experimental radiation cooled magnetrons for space

    NASA Technical Reports Server (NTRS)

    Brown, W. C.; Pollock, M.

    1991-01-01

    The heat disposal problem that occurs in the microwave generator of the Solar Power Satellite when it converts dc power from solar photovoltaic arrays into microwave power for transmission to earth is examined. A theoretical study is made of the radiation cooling of a magnetron directional amplifier, and some experimental data obtained from the QKH 2244 magnetron are presented. This instrument is an unpackaged microwave oven magnetron to which an anodized aluminum radiator has been attached and whose magnetic field is supplied by special samarium cobalt magnets.

  20. Experimental radiation cooled magnetrons for space

    NASA Astrophysics Data System (ADS)

    Brown, W. C.; Pollock, M.

    The heat disposal problem that occurs in the microwave generator of the Solar Power Satellite when it converts dc power from solar photovoltaic arrays into microwave power for transmission to earth is examined. A theoretical study is made of the radiation cooling of a magnetron directional amplifier, and some experimental data obtained from the QKH 2244 magnetron are presented. This instrument is an unpackaged microwave oven magnetron to which an anodized aluminum radiator has been attached and whose magnetic field is supplied by special samarium cobalt magnets.

  1. 3-D Printed High Power Microwave Magnetrons

    NASA Astrophysics Data System (ADS)

    Jordan, Nicholas; Greening, Geoffrey; Exelby, Steven; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad

    2015-11-01

    The size, weight, and power requirements of HPM systems are critical constraints on their viability, and can potentially be improved through the use of additive manufacturing techniques, which are rapidly increasing in capability and affordability. Recent experiments on the UM Recirculating Planar Magnetron (RPM), have explored the use of 3-D printed components in a HPM system. The system was driven by MELBA-C, a Marx-Abramyan system which delivers a -300 kV voltage pulse for 0.3-1.0 us, with a 0.15-0.3 T axial magnetic field applied by a pair of electromagnets. Anode blocks were printed from Water Shed XC 11122 photopolymer using a stereolithography process, and prepared with either a spray-coated or electroplated finish. Both manufacturing processes were compared against baseline data for a machined aluminum anode, noting any differences in power output, oscillation frequency, and mode stability. Evolution and durability of the 3-D printed structures were noted both visually and by tracking vacuum inventories via a residual gas analyzer. Research supported by AFOSR (grant #FA9550-15-1-0097) and AFRL.

  2. [REACTIVE CHANGES IN SPINAL CORD MOTONEURONS AFTER SCIATIC NERVE INJURY AFTER HIGH-FREQUENCY ELECTROSURGICAL INSTRUMENT APPLICATION].

    PubMed

    Korsak, A; Chaikovsky, Yu; Sokurenko, L; Likhodiievskyi, V; Neverovskyi, A

    2016-02-01

    A new experimental model for tissues connection at peripheral nerve injury site in form of tissues welding was designed. In current study we investigated motoneuron state 1, 3, 6 and 12 weeks after peripheral nerve injury and surgical repair with high-frequency electrosurgical technology. Spinal cord sections was stained by Nissl method and observed with light microscopy. We found that postoperative period in animals from experimental groups characterized by qualitative changes in neurons from spinal motor centers that can be interpreted as compensatory processes as response to alteration. In animals from group with high-frequency electrosurgical technology usage stabilization processes passes more quickly comparatively to animals with epineural sutures. High-frequency electrosurgical technology usage provides less harmful effects on motoneurons than epineural suturing. PMID:27001790

  3. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  4. A Plasma Lens for Magnetron Sputtering

    SciTech Connect

    Anders, Andre; Brown, Jeff

    2010-11-30

    A plasma lens, consisting of a solenoid and potential-defining ring electrodes, has been placed between a magnetron and substrates to be coated. Photography reveals qualitative information on excitation, ionization, and the transport of plasma to the substrate.

  5. Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

    DOE PAGESBeta

    Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; Varghese, Philip

    2015-03-01

    The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

  6. Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

    SciTech Connect

    Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; Varghese, Philip

    2015-03-01

    The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRF cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.

  7. Electrochromism of DC magnetron-sputtered TiO2: Role of film thickness

    NASA Astrophysics Data System (ADS)

    Sorar, Idris; Pehlivan, Esat; Niklasson, Gunnar A.; Granqvist, Claes G.

    2014-11-01

    Titanium dioxide films were prepared by reactive DC magnetron sputtering and the role of the film thickness d on the electrochromism was analyzed for 100 < d < 400 nm. The best properties were obtained for the thickest films, which yielded a mid-luminous transmittance modulation of 58% and a corresponding coloration efficiency of 26.3 cm2/C. The films were amorphous according to X-ray diffraction measurements and showed traces of adsorbed water as revealed by infrared spectroscopy.

  8. Semiconducting ZnSn{sub x}Ge{sub 1−x}N{sub 2} alloys prepared by reactive radio-frequency sputtering

    SciTech Connect

    Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S.; Atwater, Harry A.

    2015-07-01

    We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having <10% atomic composition (x = 0.025) of tin. These low-Sn alloys followed the structural and optoelectronic trends of the alloy series. Samples exhibited semiconducting properties, including optical band gaps and increasing in resistivities with temperature. Resistivity vs. temperature measurements indicated that low-Sn alloys were non-degenerately doped, whereas alloys with higher Sn content were degenerately doped. These films show potential for ZnSn{sub x}Ge{sub 1−x}N{sub 2} as tunable semiconductor absorbers for possible use in photovoltaics, light-emitting diodes, or optical sensors.

  9. Magnetron Driven L Band RF Gun using a Photocathode Emitter

    NASA Astrophysics Data System (ADS)

    Evans, Kirk; Fisher, Amnon; Friedman, Moshe

    1996-11-01

    Magnetron Driven L Band RF Gun using a Photocathode Emitter A tunable 5 megawatt L-Band injection locked magnetron amplifier is used to drive a 1-1/2 cell RF cavity gun, to produce a 2.5 megavolt electron beam. A tunable RF source relaxes the precision of the cavity gun construction, and therefore simplifies the design and reduces the overall cost. The design of the L-Band ( 1.3 GHz) RF cavity linear accelerator is presented, along with Superfish, SOS computer simulations, and calculations of beam energy and temporal qualities. Measurements of a few robust photocathode materials as well as measurements of the beam qualities of the final accelerator are presented. Future work will utilize new semiconductor laser diodes that can be electrically driven in the gigahertz range. This makes possible an electron gun system which can run at the RF frequency used to accelerate the electron beam. Such a system produces a "lock to clock" and synchronized RF and electron beam source which can be run single shot or any rep rate up to the RF frequency.

  10. On Tomonaga's theory of split-anode magnetrons

    NASA Astrophysics Data System (ADS)

    Dittrich, Walter

    2016-06-01

    This article offers a review of the history of radar research and its application in the 20th century. After describing the wartime work of Sin-Itiro Tomonaga and his theory of the cavity magnetron, we formulate the equations of motion of an electron in a cavity magnetron using action-angle variables. This means following the electron's path on its way from a cylindrical cathode moving toward a co-axial cylindrical anode in presence of a uniform magnetic field parallel to the common axis. After analyzing the situation without coupling to an external oscillatory electric field, we employ methods of canonical perturbation theory to find the resonance condition between the frequencies of the free theory ωr, ωϕ and the applied perturbing oscillatory frequency ω. A long-time averaging process will then eliminate the periodic terms in the equation for the now time-dependent action-angle variables. The terms that are no longer periodic will cause secular changes so that the canonical action-angle variables (J, δ) change in a way that the path of the electron will deform gradually so that it can reach the anode. How the ensemble of the initially randomly distributed electrons forms spokes and how their energy is conveyed to the cavity-field oscillation is the main focus of this article. Some remarks concerning the importance of results in QED and the invention of radar theory and application conclude the article.

  11. On Tomonaga's theory of split-anode magnetrons

    NASA Astrophysics Data System (ADS)

    Dittrich, Walter

    2016-05-01

    This article offers a review of the history of radar research and its application in the 20th century. After describing the wartime work of Sin-Itiro Tomonaga and his theory of the cavity magnetron, we formulate the equations of motion of an electron in a cavity magnetron using action-angle variables. This means following the electron's path on its way from a cylindrical cathode moving toward a co-axial cylindrical anode in presence of a uniform magnetic field parallel to the common axis. After analyzing the situation without coupling to an external oscillatory electric field, we employ methods of canonical perturbation theory to find the resonance condition between the frequencies of the free theory ω r ,ω ϕ and the applied perturbing oscillatory frequency ω. A long-time averaging process will then eliminate the periodic terms in the equation for the now time-dependent action-angle variables. The terms that are no longer periodic will cause secular changes so that the canonical action-angle variables (J,δ) change in a way that the path of the electron will deform gradually so that it can reach the anode. How the ensemble of the initially randomly distributed electrons forms spokes and how their energy is conveyed to the cavity-field oscillation is the main focus of this article. Some remarks concerning the importance of results in QED and the invention of radar theory and application conclude the article.

  12. Magnetron deposition of TCO films using ion beam

    NASA Astrophysics Data System (ADS)

    Asainov, O.; Umnov, S.; Chinin, A.

    2015-11-01

    Thin films of tin oxide (TO) were deposited on the glass substrates at room temperature using reactive magnetron sputtering at various oxygen partial pressures. After the deposition the films were irradiated with argon ions beam. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties in the range of 300-1100 nm were investigated by photometry as well as their structural properties were studied using X-ray diffraction. Diffractometric research showed that the films, deposited on a substrate, have a crystal structure, and after argon ions irradiation they become quasi-crystalline (amorphous). It was found that the transmission increases proportionally with the irradiation time, but the surface resistance -disproportionally.

  13. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    NASA Astrophysics Data System (ADS)

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Hoff, B. W.; Gilgenbach, R. M.

    2015-08-01

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions.

  14. Stability of Brillouin flow in planar, conventional, and inverted magnetrons

    SciTech Connect

    Simon, D. H.; Lau, Y. Y.; Greening, G.; Wong, P.; Gilgenbach, R. M.; Hoff, B. W.

    2015-08-15

    The Brillouin flow is the prevalent flow in crossed-field devices. We systematically study its stability in the conventional, planar, and inverted magnetron geometry. To investigate the intrinsic negative mass effect in Brillouin flow, we consider electrostatic modes in a nonrelativistic, smooth bore magnetron. We found that the Brillouin flow in the inverted magnetron is more unstable than that in a planar magnetron, which in turn is more unstable than that in the conventional magnetron. Thus, oscillations in the inverted magnetron may startup faster than the conventional magnetron. This result is consistent with simulations, and with the negative mass property in the inverted magnetron configuration. Inclusion of relativistic effects and electromagnetic effects does not qualitatively change these conclusions.

  15. Experimental evidence of warm electron populations in magnetron sputtering plasmas

    SciTech Connect

    Sahu, B. B. Han, Jeon G.; Kim, Hye R.; Ishikawa, K.; Hori, M.

    2015-01-21

    This work report on the results obtained using the Langmuir probe (LP) measurements in high-power dc magnetron sputtering discharges. Data show clear evidence of two electron components, such as warm and bulk electrons, in the sputtering plasma in a magnetic trap. We have also used optical emission spectroscopy diagnostic method along with LP to investigate the plasma production. Data show that there is a presence of low-frequency oscillations in the 2–3 MHz range, which are expected to be generated by high-frequency waves. Analysis also suggests that the warm electrons, in the plasmas, can be formed due to the collisionless Landau damping of the bulk electrons.

  16. Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gan, J.; Gorantla, S.; Riise, H. N.; Fjellvâg, Ø. S.; Diplas, S.; Løvvik, O. M.; Svensson, B. G.; Monakhov, E. V.; Gunnæs, A. E.

    2016-04-01

    Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ˜5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

  17. Analysis of peer-to-peer locking of magnetrons

    SciTech Connect

    Pengvanich, P.; Lau, Y. Y.; Cruz, E.; Gilgenbach, R. M.; Hoff, B.; Luginsland, J. W.

    2008-10-15

    The condition for mutual, or peer-to-peer, locking of two magnetrons is derived. This condition reduces to Adler's classical phase-locking condition in the limit where one magnetron becomes the 'master' and the other becomes the 'slave.' The formulation is extended to the peer-to-peer locking of N magnetrons, under the assumption that the electromagnetic coupling among the N magnetrons is modeled by an N-port network.

  18. Non-Neutral Drift Resonance in Magnetrons

    NASA Astrophysics Data System (ADS)

    Kaup, D. J.

    2005-04-01

    We study the features of the RF fields in a magnetron, when the RF amplitude has saturated, in the nonrelativistic, electrostatic limit. In this saturated stage, the linear RF equations can be reduced to a fifth-order set of ordinary differential equations. Two modes of which are fast cyclotron modes, one mode is a fast drift wave, and the other two modes are the usual, well-known, slow magnetron modes. Here, we will study the interaction between the fast drift mode (diocotron mode) and the slow magnetron modes, at the diocotron resonance. We will also show that the fast cyclotron modes can be ignored at this resonance, and thereby can reduce the system to a third- order set of ordinary differential equations. Using multiscale techniques, we will then obtain solutions for the inner and the outer regions at the diocotron resonance, and thereby obtain the conversion and transmission rates between these three modes at the diocotron resonance.

  19. Increased frequency of {gamma}{delta} T cells in cerebrospinal fluid and peripheral blood of patients with multiple sclerosis: Reactivity, cytotoxicity, and T cell receptor V gene rearrangements

    SciTech Connect

    Stinissen, P.; Vandevyver, C.; Medaer, R.

    1995-05-01

    Infiltrating {gamma}{delta} T cells are potentially involved in the central nervous system demyelination in multiple sclerosis (MS). To further study this hypothesis, we analyzed the frequency and functional properties of {gamma}{delta} T cells in peripheral blood (PB) and paired cerebrospinal fluid (CSF) of patients with MS and control subjects, including patients with other neurologic diseases (OND) and healthy individuals. The frequency analysis was performed under limiting dilution condition using rIL-2 and PHA. After PHA stimulation, a significantly increased frequency of {gamma}{delta} T cells was observed in PB and in CSF of MS patients as compared with PB and CSF of patients with OND. The frequency was represented equally in OND patients and normal individuals. Similarly, the IL-2-responsive {gamma}{delta} T cells occurred at a higher frequency in PB of MS than of control subjects. Forty-three percent of the {gamma}{delta} T cell clones isolates from PB and CSF of MS patients responded to heat shock protein (HSP70) but not HSP65, whereas only 2 of 30 control {gamma}{delta} T cell clones reacted to the HSP. The majority of the {gamma}{delta} T cell clones were able to induce non-MHC-restricted cytolysis of Daudi cells. All clones displayed a substantial reactivity to bacterial superantigens staphylococcal enterotoxin B and toxic shock syndrome toxin-1, irrespective of their {gamma}{delta} V gene usage. Furthermore, the {gamma}{delta} T cell clones expressed predominantly TCRDV2 and GV2 genes, whereas the clones derived from CSF of MS patients expressed either DV1 or DV2 genes. The obtained {gamma}{delta} clones, in general, represented rather heterogeneous clonal origins, even though a predominant clonal origin was found in a set of 10 {gamma}{delta} clones derived from one patient with MS. The present study provides new evidence supporting a possible role of {gamma}{delta} T cells in the secondary inflammatory processes in MS. 39 refs., 5 figs., 4 tabs.

  20. Characterization and optimization of the magnetron directional amplifier

    NASA Astrophysics Data System (ADS)

    Hatfield, Michael Craig

    Many applications of microwave wireless power transmission (WPT) are dependent upon a high-powered electronically-steerable phased array composed of many radiating modules. The phase output from the high-gain amplifier in each module must be accurately controlled if the beam is to be properly steered. A highly reliable, rugged, and inexpensive design is essential for making WPT applications practical. A conventional microwave oven magnetron may be combined with a ferrite circulator and other external circuitry to create such a system. By converting it into a two-port amplifier, the magnetron is capable of delivering at least 30 dB of power gain while remaining phase-locked to the input signal over a wide frequency range. The use of the magnetron in this manner is referred to as a MDA (Magnetron Directional Amplifier). The MDA may be integrated with an inexpensive slotted waveguide array (SWA) antenna to form the Electronically-Steerable Phased Array Module (ESPAM). The ESPAM provides a building block approach to creating phased arrays for WPT. The size and shape of the phased array may be tailored to satisfy a diverse range of applications. This study provided an in depth examination into the capabilities of the MDA/ESPAM. The basic behavior of the MDA was already understood, as well as its potential applicability to WPT. The primary objective of this effort was to quantify how well the MDA could perform in this capacity. Subordinate tasks included characterizing the MDA behavior in terms of its system inputs, optimizing its performance, performing sensitivity analyses, and identifying operating limitations. A secondary portion of this study examined the suitability of the ESPAM in satisfying system requirements for the solar power satellite (SPS). Supporting tasks included an analysis of SPS requirements, modeling of the SWA antenna, and the demonstration of a simplified phased array constructed of ESPAM elements. The MDA/ESPAM is well suited for use as an

  1. Facility for combined in situ magnetron sputtering and soft x-ray magnetic circular dichroism

    SciTech Connect

    Telling, N. D.; Laan, G. van der; Georgieva, M. T.; Farley, N. R. S.

    2006-07-15

    An ultrahigh vacuum chamber that enables the in situ growth of thin films and multilayers by magnetron sputtering techniques is described. Following film preparation, x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) measurements are performed by utilizing an in vacuum electromagnet. XMCD measurements on sputtered thin films of Fe and Co yield spin and orbital moments that are consistent with those obtained previously on films measured in transmission geometry and grown in situ by evaporation methods. Thin films of FeN prepared by reactive sputtering are also examined and reveal an apparent enhancement in the orbital moment for low N content samples. The advantages of producing samples for in situ XAS and XMCD studies by magnetron sputtering are discussed.

  2. Effect of ion bombarding energies on photocatalytic TiO{sub 2} films growing in a pulsed dual magnetron discharge

    SciTech Connect

    Novak, Ondrej; Vlcek, Jaroslav

    2011-05-15

    Photocatalytic crystalline TiO{sub 2} films were deposited by a pulsed dc dual magnetron system. The depositions were performed using two unbalanced magnetrons with planar titanium targets of 50 mm diameter in Ar+O{sub 2} gas mixtures at a total pressure of 0.9 Pa with oxygen partial pressures ranging from 0.2 to 0.9 Pa. The maximum substrate surface temperature was 160 deg. C Both magnetrons operated in the same asymmetric bipolar mode at the repetition frequencies of 100 and 350 kHz with a fixed 50% duty cycle and the average target power densities of 52-74 W cm{sup -2} in the negative voltage phase of the pulses, but the magnetron operations were shifted by a half of the period. Time-averaged energy-resolved mass spectroscopy was performed at a substrate position located 100 mm from the targets. The measured structure of the ion energy distributions was correlated with the distinct pulse phases of the magnetron discharges. A decrease in the energy delivered by fast ions (E{>=}10 eV) to the unit volume of the growing films, together with possible effects of plasma-chemical processes, during the depositions at the oxygen partial pressures of 0.5-0.75 Pa and the repetition frequency of 350 kHz resulted in a strong predominance of the highly photoactive crystalline anatase phase in the TiO{sub 2} films.

  3. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-03-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  4. Magnetron-Sputtered YSZ and CGO Electrolytes for SOFC

    NASA Astrophysics Data System (ADS)

    Solovyev, A. A.; Shipilova, A. V.; Ionov, I. V.; Kovalchuk, A. N.; Rabotkin, S. V.; Oskirko, V. O.

    2016-08-01

    Reactive magnetron sputtering has been used for deposition of yttria-stabilized ZrO2 (YSZ) and gadolinium-doped CeO2 (CGO) layers on NiO-YSZ commercial anodes for solid oxide fuel cells. To increase the deposition rate and improve the quality of the sputtered thin oxide films, asymmetric bipolar pulse magnetron sputtering was applied. Three types of anode-supported cells, with single-layer YSZ or CGO and YSZ/CGO bilayer electrolyte, were prepared and investigated. Optimal thickness of oxide layers was determined experimentally. Based on the electrochemical characteristics of the cells, it is shown that, at lower operating temperatures of 650°C to 700°C, the cells with single-layer CGO electrolyte are most effective. The power density of these fuel cells exceeds that of the cell based on YSZ single-layer electrolyte at the same temperature. Power densities of 650 mW cm-2 and 500 mW cm-2 at 700°C were demonstrated by cells with single-layer YSZ and CGO electrolyte, respectively. Significantly enhanced maximum power density was achieved in a bilayer-electrolyte single cell, as compared with cells with a single electrolyte layer. Maximum power density of 1.25 W cm-2 at 800°C and 1 W cm-2 at 750°C under voltage of 0.7 V were achieved for the YSZ/CGO bilayer electrolyte cell with YSZ and CGO thickness of about 4 μm and 1.5 μm, respectively. This signifies that the YSZ thin film serves as a blocking layer to prevent electrical current leakage in the CGO layer, leading to the overall enhanced performance. This performance is comparable to the state of the art for cells based on YSZ/CGO bilayer electrolyte.

  5. Magnetron sputtered nanostructured cadmium oxide films for ammonia sensing

    SciTech Connect

    Dhivya, P.; Prasad, A.K.; Sridharan, M.

    2014-06-01

    Nanostructured cadmium oxide (CdO) films were deposited on to glass substrates by reactive dc magnetron sputtering technique. The depositions were carried out for different deposition times in order to obtain films with varying thicknesses. The CdO films were polycrystalline in nature with cubic structure showing preferred orientation in (1 1 1) direction as observed by X-ray diffraction (XRD). Field-emission scanning electron microscope (FE-SEM) micrographs showed uniform distribution of grains of 30–35 nm size and change in morphology from spherical to elliptical structures upon increasing the film thickness. The optical band gap value of the CdO films decreased from 2.67 to 2.36 eV with increase in the thickness. CdO films were deposited on to interdigitated electrodes to be employed as ammonia (NH{sub 3}) gas sensor. The fabricated CdO sensor with thickness of 294 nm has a capacity to detect NH{sub 3} as low as 50 ppm at a relatively low operating temperature of 150 °C with quick response and recovery time. - Highlights: • Nanostructured CdO films were deposited on to glass substrates using magnetron sputtering. • Deposition time was varied in order to obtain films with different thicknesses. • The CdO films were polycrystalline in nature with preferred orientation along (1 1 1) direction. • The optical bandgap values of the films decreased on increasing the thickness of the films. • CdO films with different thickness such as 122, 204, 294 nm was capable to detect NH{sub 3} down to 50 ppm at operating temperature of 150 °C.

  6. Direct-current magnetron sputtering for optical coatings

    NASA Astrophysics Data System (ADS)

    Lagana, Paolo; Misiano, Carlo; Simonetti, Enrico

    1994-09-01

    The advantages of optical coatings realized by Sputtering versus thermal evaporation by crucible or Electron Gun, are very well known, but this technique is used only partially for dielectric coatings despite of a wide use in semiconductors and microcircuits, due to the slowness of RF Sputtering processes when starting from dielectric targets. This paper describes a DC Reactive Magnetron Sputtering technique from metal target set up at Ce.Te.V. for deposition of multilayer coatings, with cycle times comparable-or even faster-than conventional solution. The advantages of this process consist in obtaining films with high optical and mechanical performances with high repeatability on room temperature substrates. Pumping cycle can thus be faster and dead time for substrates heating and cooling down can be avoided, characteristics which plastic substrates can particularly take advantage of. Performances of the realized coatings on glass and plastic substrates, together with cycle time and material costs, are finally compared to results obtainable by Electron Beam Gun Reactive Deposition.

  7. Microstructure of microwave dielectricthin films by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Shi, Feng; Cui, Chuanwen

    2010-02-01

    The article describes the microstructure and morphological properties of microwave dielectric ceramic thin films. These thin films were successfully prepared on SiO 2 (1 1 0) single-crystal substrates by radio frequency magnetron-sputtering system. The microstructure and morphology of the thin films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The results show that the main phase is Ba 0.5Sr 0.5Nb 2O 6,which has a tetragonal perovskite structure, a long strip pattern, and uniform crystal-grain size of about 2-3 μm in length when annealed under 1150 °C for 30 min in an O 2 atmosphere. These thin films are of excellent crystallization quality, with a polycrystalline and dense structure.

  8. Spatiotemporal synchronization of drift waves in a magnetron sputtering plasma

    SciTech Connect

    Martines, E.; Zuin, M.; Cavazzana, R.; Antoni, V.; Serianni, G.; Spolaore, M.; Vianello, N.; Adámek, J.

    2014-10-15

    A feedforward scheme is applied for drift waves control in a magnetized magnetron sputtering plasma. A system of driven electrodes collecting electron current in a limited region of the explored plasma is used to interact with unstable drift waves. Drift waves actually appear as electrostatic modes characterized by discrete wavelengths of the order of few centimeters and frequencies of about 100 kHz. The effect of external quasi-periodic, both in time and space, travelling perturbations is studied. Particular emphasis is given to the role played by the phase relation between the natural and the imposed fluctuations. It is observed that it is possible by means of localized electrodes, collecting currents which are negligible with respect to those flowing in the plasma, to transfer energy to one single mode and to reduce that associated to the others. Due to the weakness of the external action, only partial control has been achieved.

  9. Frequency, Private Specificity, and Cross-Reactivity of Preexisting Hepatitis C Virus (HCV)-Specific CD8+ T Cells in HCV-Seronegative Individuals: Implications for Vaccine Responses

    PubMed Central

    Zhang, Shihong; Bakshi, Rakesh K.; Suneetha, Pothakamuri Venkata; Fytili, Paraskevi; Antunes, Dinler A.; Vieira, Gustavo F.; Jacobs, Roland; Klade, Christoph S.; Manns, Michael P.; Kraft, Anke R. M.; Wedemeyer, Heiner; Schlaphoff, Verena

    2015-01-01

    ABSTRACT T cell responses play a critical role in controlling or clearing viruses. Therefore, strategies to prevent or treat infections include boosting T cell responses. T cells specific for various pathogens have been reported in unexposed individuals and an influence of such cells on the response toward vaccines is conceivable. However, little is known about their frequency, repertoire, and impact on vaccination. We performed a detailed characterization of CD8+ T cells specific to a hepatitis C virus (HCV) epitope (NS3-1073) in 121 HCV-seronegative individuals. We show that in vitro HCV NS3-1073-specific CD8+ T cell responses were rather abundantly detectable in one-third of HCV-seronegative individuals irrespective of risk factors for HCV exposure. Ex vivo, these NS3-1073-specific CD8+ T cells were found to be both naive and memory cells. Importantly, recognition of various peptides derived from unrelated viruses by NS3-1073-specific CD8+ T cells showed a considerable degree of T cell cross-reactivity, suggesting that they might in part originate from previous heterologous infections. Finally, we further provide evidence that preexisting NS3-1073-specific CD8+ T cells can impact the T cell response toward peptide vaccination. Healthy, vaccinated individuals who showed an in vitro response toward NS3-1073 already before vaccination displayed a more vigorous and earlier response toward the vaccine. IMPORTANCE Preventive and therapeutic vaccines are being developed for many viral infections and often aim on inducing T cell responses. Despite effective antiviral drugs against HCV, there is still a need for a preventive vaccine. However, the responses to vaccines can be highly variable among different individuals. Preexisting T cells in unexposed individuals could be one reason that helps to explain the variable T cell responses to vaccines. Based on our findings, we suggest that HCV CD8+ T cells are abundant in HCV-seronegative individuals but that their repertoire

  10. Fiber textures of titanium nitride and hafnium nitride thin films deposited by off-normal incidence magnetron sputtering

    SciTech Connect

    Deniz, D.; Harper, J. M. E.

    2008-09-15

    We studied the development of crystallographic texture in titanium nitride (TiN) and hafnium nitride (HfN) films deposited by off-normal incidence reactive magnetron sputtering at room temperature. Texture measurements were performed by x-ray pole figure analysis of the (111) and (200) diffraction peaks. For a deposition angle of 40 deg. from substrate normal, we obtained TiN biaxial textures for a range of deposition conditions using radio frequency (rf) sputtering. Typically, we find that the <111> orientation is close to the substrate normal and the <100> orientation is close to the direction of the deposition source, showing substantial in-plane alignment. We also introduced a 150 eV ion beam at 55 deg. with respect to substrate normal during rf sputtering of TiN. Ion beam enhancement caused TiN to align its out-of-plane texture along <100> orientation. In this case, (200) planes are slightly tilted with respect to the substrate normal away from the ion beam source, and (111) planes are tilted 50 deg. toward the ion beam source. For comparison, we found that HfN deposited at 40 deg. without ion bombardment has a strong <100> orientation parallel to the substrate normal. These results are consistent with momentum transfer among adatoms and ions followed by an increase in surface diffusion of the adatoms on (200) surfaces. The type of fiber texture results from a competition among texture mechanisms related to surface mobilities of adatoms, geometrical, and directional effects.

  11. Experimental investigation of quasiperiodic-chaotic-quasiperiodic-chaotic transition in a direct current magnetron sputtering plasma

    SciTech Connect

    Sabavath, Gopi Kishan; Banerjee, I.; Mahapatra, S. K.; Shaw, Pankaj Kumar; Sekar Iyengar, A. N.

    2015-08-15

    Floating potential fluctuations from a direct current magnetron sputtering plasma have been analysed using time series analysis techniques like phase space plots, power spectra, frequency bifurcation plot, etc. The system exhibits quasiperiodic-chaotic-quasiperiodic-chaotic transitions as the discharge voltage was increased. The transitions of the fluctuations, quantified using the largest Lyapunov exponent, have been corroborated by Hurst exponent and the Shannon entropy. The Shannon entropy is high for quasiperiodic and low for chaotic oscillations.

  12. Magnetron cathodes in plasma electrode Pockels cells

    DOEpatents

    Rhodes, M.A.

    1995-04-25

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal. 5 figs.

  13. Magnetron cathodes in plasma electrode pockels cells

    DOEpatents

    Rhodes, Mark A.

    1995-01-01

    Magnetron cathodes, which produce high current discharges, form greatly improved plasma electrodes on each side of an electro-optic crystal. The plasma electrode has a low pressure gas region on both sides of the crystal. When the gas is ionized, e.g., by a glow discharge in the low pressure gas, the plasma formed is a good conductor. The gas electrode acts as a highly uniform conducting electrode. Since the plasma is transparent to a high energy laser beam passing through the crystal, the plasma is transparent. A crystal exposed from two sides to such a plasma can be charged up uniformly to any desired voltage. A typical configuration utilizes helium at 50 millitorr operating. pressure and 2 kA discharge current. The magnetron cathode produces a more uniform plasma and allows a reduced operating pressure which leads to lower plasma resistivity and a more uniform charge on the crystal.

  14. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  15. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  16. Effect of buffer layer on thermochromic performances of VO2 films fabricated by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Zhu, Benqin; Tao, Haizheng; Zhao, Xiujian

    2016-03-01

    As a well-developed industrial fabricating method, magnetron sputtering technique has its distinct advantages for the large-scale production. In order to investigate the effect of buffer layer on the formation and thermochromic performances of VO2 films, using RF magnetron sputtering method, we fabricated three kinds of buffer layers SiO2, TiO2 and SnO2 on soda lime float-glass. Then according to the reactive DC magnetron sputtering method, VO2 films were deposited. Due to the restriction of heat treatment temperature when using soda lime float-glass as substrates, dense rutile phase TiO2 cannot be formed, leading to the formation of vanadium oxide compounds containing Na ions. When using SnO2 as buffer layer, we found that relatively high pure VO2 can be deposited more easily. In addition, compared with the effect of SiO2 buffer layer, we observed an enhanced visible transparency, a decreased infrared emissivity, which should be mainly originated from the modified morphology and/or the hetero-structured VO2/SnO2 interface.

  17. Drastic improvement in the S-band relativistic magnetron operation

    SciTech Connect

    Sayapin, A.; Hadas, Y.; Krasik, Ya. E.

    2009-08-17

    The superior operation of a S-band relativistic magnetron powered by a Linear Induction Accelerator with {<=}400 kV, {<=}4 kA, and {approx}150 ns output pulses was revealed when the magnetron was coupled with a resonance load and a part of the generated microwave power stored in the resonator was reflected back to the magnetron. It is shown that, under optimal conditions, the efficiency of the magnetron operation increases by {approx}40% and the generated microwave power reaches the power of the electron beam.

  18. Drastic improvement in the S-band relativistic magnetron operation

    NASA Astrophysics Data System (ADS)

    Sayapin, A.; Hadas, Y.; Krasik, Ya. E.

    2009-08-01

    The superior operation of a S-band relativistic magnetron powered by a Linear Induction Accelerator with ≤400 kV, ≤4 kA, and ˜150 ns output pulses was revealed when the magnetron was coupled with a resonance load and a part of the generated microwave power stored in the resonator was reflected back to the magnetron. It is shown that, under optimal conditions, the efficiency of the magnetron operation increases by ˜40% and the generated microwave power reaches the power of the electron beam.

  19. Satellite Power System (SPS) magnetron tube assessment study

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1981-01-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  20. Secondary-electrons-induced cathode plasma in a relativistic magnetron

    SciTech Connect

    Queller, T.; Gleizer, J. Z.; Krasik, Ya. E.

    2012-11-19

    Results of time- and space-resolved spectroscopic studies of cathode plasma during a S-band relativistic magnetron operation and a magnetically insulated diode having an identical interelectrode gap are presented. It was shown that in the case of the magnetron operation, one obtains an earlier, more uniform plasma formation due to energetic electrons' interaction with the cathode surface and ionization of desorbed surface monolayers. No differences were detected in the cathode's plasma temperature between the magnetron and the magnetically insulated diode operation, and no anomalous fast cathode plasma expansion was observed in the magnetron at rf power up to 350 MW.

  1. Satellite Power System (SPS) magnetron tube assessment study

    NASA Astrophysics Data System (ADS)

    Brown, W. C.

    1981-02-01

    The data base was extended with respect to the magnetron directional amplifier and its operating parameters that are pertinent to its application in the solar power satellite. On the basis of the resulting extended data base the design of a magnetron was outlined that would meet the requirements of the SPS application and a technology program was designed that would result in its development. The proposed magnetron design for the SPS is a close scale of the microwave oven magnetron, and resembles it closely physically and electrically.

  2. Thin-film TiPbO3 varistors obtained by two-source magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Lewandowski, M.

    2016-02-01

    The paper presents the method of obtaining thin films of TiPbO3 by two-source magnetron sputtering DC-M. The films were obtained in a reactive process of sputtering metallic targets of titanium (Ti) and lead (Pb). The research involved the impact of the time of sputtering of the respective targets on voltage-dependent resistance of the obtained films for different power conditions, pressures of process gases and the powers provided on the targets. The obtained nonlinearity coefficients and the current-voltage I(U) characteristics were within the following range.

  3. Plasma"anti-assistance" and"self-assistance" to high power impulse magnetron sputtering

    SciTech Connect

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-30

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contra-productive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  4. Particle-In-Cell (PIC) simulation of long-anode magnetron

    NASA Astrophysics Data System (ADS)

    Verma, Rajendra Kumar; Maurya, Shivendra; Singh, Vindhyavasini Prasad

    2016-03-01

    Long Anode Magnetron (LAM) is a design scheme adopted to attain greater thermal stability and higher power levels for the conventional magnetrons. So a LAM for 5MW Power level at 2.858 GHz was `Virtual Prototyped' using Admittance Matching field theory (AMT) andthen a PIC Study (Beam-wave interaction) was conducted using CST Particle Studio (CST-PS) which is explained in this paper. The convincing results thus obtained were - hot resonant frequency of 2.834 GHz. Output power of 5 MW at beam voltage of 58kV and applied magnetic field of 2200 Gauss with an overall efficiency of 45%. The simulated parameters values on comparison with the E2V LAM tube (M5028) were in good agreement which validates the feasibility of the design approach.

  5. Influence of oxygen flow rate on the structural, optical and electrical properties of ZnO films grown by DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gobbiner, Chaya Ravi; Ali Avanee Veedu, Muhammed; Kekuda, Dhananjaya

    2016-04-01

    Zinc oxide thin films were deposited on glass substrates at different oxygen flow rates by DC reactive magnetron sputtering. The oxygen flow rate was found to be one of the crucial parameters which influence structural, optical and electrical properties of grown films. The structural and optical characterization of the deposited films was carried out using X-ray diffraction and UV-visible spectroscopy, respectively. Swanepoel envelope and Drude-Lorentz (DL) models were applied to extract the optoelectronic parameters such as refractive index, dispersion energy and plasma frequency. Structurally, grain size was found to decrease with increase in oxygen flow rate during deposition. Moreover, all the films exhibited preferred (002) orientation confirming c-axis orientation of the films perpendicular to the substrate. For a particular range of oxygen flow rates, columnar growth was achieved. Marginal increase in the optical band gap from 3.14 to 3.22 eV was observed as the oxygen flow rate increased from 3 to 10 sccm. Calculated plasma frequency from the DL model was found to be in the infrared region. It has decreased as oxygen flow rate increased with the value from 1.625 × 1014 rad/s (862 cm-1) to 1.072 × 1014 rad/s (568 cm-1).

  6. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  7. Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

    SciTech Connect

    Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony; Konstantinidis, Stephanos

    2012-07-15

    The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

  8. Turbulent electron beams generated by magnetron injection guns

    NASA Astrophysics Data System (ADS)

    Kalinin, Yu. A.; Starodubov, A. V.; Mushtakov, A. V.

    2011-06-01

    A detailed experimental investigation of oscillators based on a magnetron injection gun is carried out. Experimental data show that such oscillators offer a considerable advantage over other similar devices; namely, they are capable of generating powerful wideband noiselike microwave oscillations. This is because magnetron injection guns generate turbulent electron beams at their exit.

  9. Magnetron-Sputtered Amorphous Metallic Coatings

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Mehra, M.; Khanna, S. K.

    1985-01-01

    Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

  10. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    SciTech Connect

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  11. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    SciTech Connect

    Anders, Andre

    2010-07-15

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  12. Recirculating Planar Magnetron Modeling and Experiments

    NASA Astrophysics Data System (ADS)

    Franzi, Matthew; Gilgenbach, Ronald; Hoff, Brad; French, Dave; Lau, Y. Y.

    2011-10-01

    We present simulations and initial experimental results of a new class of crossed field device: Recirculating Planar Magnetrons (RPM). Two geometries of RPM are being explored: 1) Dual planar-magnetrons connected by a recirculating section with axial magnetic field and transverse electric field, and 2) Planar cathode and anode-cavity rings with radial magnetic field and axial electric field. These RPMs have numerous advantages for high power microwave generation by virtue of larger area cathodes and anodes. The axial B-field RPM can be configured in either the conventional or inverted (faster startup) configuration. Two and three-dimensional EM PIC simulations show rapid electron spoke formation and microwave oscillation in pi-mode. Smoothbore prototype axial-B RPM experiments are underway using the MELBA accelerator at parameters of -300 kV, 1-20 kA and pulselengths of 0.5-1 microsecond. Implementation and operation of the first RPM slow wave structure, operating at 1GHz, will be discussed. Research supported by AFOSR, AFRL, L-3 Communications, and Northrop Grumman. Done...processed 1830 records...17:52:57 Beginning APS data extraction...17:52:57

  13. Analysis of DC magnetron sputtered beryllium films

    SciTech Connect

    Price, C.W.; Hsieh, E.J.; Lindsey, E.F.; Pierce, E.L.; Norberg, J.C.

    1988-10-01

    We are evaluating techniques that alter the columnar grain structure in sputtered beryllium films on fused silica substrates. The films are formed by DC magnetron sputtering, and the columnar structure, which is characteristic of this and most other deposition techniques, is highly detrimental to the tensile strength of the films. Attempts to modify the columnar structure by using RF-biased sputtering combined with nitrogen pulsing have been successful, and this paper describes the analyses of these films. Sputtered beryllium films are quite brittle, and the columnar structure in particular tends to form a distinct intergranular fracture; therefore, the grain structure was analyzed in fractured specimens using the high-resolution capability of a scanning electron microscope (SEM) equipped with a field emission gun (FESEM). Ion microanalysis using secondary-ion mass spectroscopy (SIMS) was conducted on some specimens to determining relative contamination levels introduced by nitrogen pulsing. The capability to perform quantitative SIMS analyses using ion-implanted specimens as standards also is being developed. This work confirms that the structure of DC magnetron sputtered beryllium can be improved significantly with combined nitrogen pulsing and RF-biased sputtering. 8 refs.

  14. Fabrication of hydrogenated microcrystalline silicon thin films using RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hsuan-Wen; Su, Wei-Ning; Han, Chia-Wei; Chen, Sheng-Hui; Lee, Cheng-Chung

    2007-09-01

    Hydrogenated microcrystalline silicon (μc-Si:H ) thin films have attracted many attentions due to the high mobility compared with the amorphous silicon (a-Si) thin films. To fabricate μc-Si:H thin films, plasma-enhance chemical vapor deposition (PECVD) is the most popular method. The disadvantages of PECVD are the high facility cost and using the toxic processing gases such as silane (SiH 4). Whereas there is no these disadvantages using radio-frequency (RF) magnetron sputtering to deposit silicon thin films. Unfortunately, the silicon thin films deposited by the regular RF magnetron sputtering are a-Si. In this study, μc-Si:H thin films were fabricated using RF magnetron sputtering with argon and hydrogen as working gas at low substrate temperature (T s=250°C and 350°C).The grain sizes, crystal volume fractions and photosensitivity (ratios of dark conductivities and photo conductivities) of the μc-Si:H thin films which deposited with different hydrogen partial pressures and sputtering powers were analyzed. The results showed that the grain sizes and the crystal volume fractions were increased and the photosensitivity was decreased as the hydrogen partial pressure increased at the sputtering power 200W. The grain size was between 15 to 20 nm and the crystal volume fractions was between 75 to 80% when the hydrogen partial pressure was over 90%.

  15. Phased Array Technology with Phase and Amplitude Controlled Magnetron for Microwave Power Transmission

    NASA Astrophysics Data System (ADS)

    Shinohara, N.; Matsumoto, H.

    2004-12-01

    We need a microwave power transmitter with light weight and high DC-RF conversion efficiency for an economical SSPS (Space Solar Power System). We need a several g/W for a microwave power transmission (MPT) system with a phased array with 0.0001 degree of beam control accuracy (=tan-1 (100m/36,000km)) and over 80 % of DC-RF conversion efficiency when the weight of the 1GW-class SPS is below a several thousand ton - a several tens of thousand ton. We focus a microwave tube, especially magnetron by economical reason and by the amount of mass-production because it is commonly used for microwave oven in the world. At first, we have developed a phase controlled magnetron (PCM) with different technologies from what Dr. Brown developed. Next we have developed a phase and amplitude controlled magnetron (PACM). For the PACM, we add a feedback to magnetic field of the PCM with an external coil to control and stabilize amplitude of the microwave. We succeed to develop the PACM with below 10-6 of frequency stability and within 1 degree of an error in phase and within 1% of amplitude. We can control a phase and amplitude of the PACM and we have developed a phased array the PCMs. With the PCM technology, we have developed a small light weight MPT transmitter COMET (Compact Microwave Energy Transmitter) with consideration of heat radiation for space use and with consideration of mobility to space.

  16. Electrostatic quadrupole plasma mass spectrometer measurements during thin film depositions using simultaneous matrix assisted pulsed laser evaporation and magnetron sputtering

    SciTech Connect

    Hunter, C. N.; Check, M. H.; Muratore, C.; Voevodin, A. A.

    2010-05-15

    A hybrid plasma deposition process, combining matrix assisted pulsed laser evaporation (MAPLE) of carbon nanopearls (CNPs) with magnetron sputtering of gold was investigated for growth of composite films, where 100 nm sized CNPs were encapsulated into a gold matrix. Composition and morphology of such composite films was characterized with x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy (TEM) analysis. Carbon deposits on a gold magnetron sputter target and carbon impurities in the gold matrices of deposited films were observed while codepositing from gold and frozen toluene-CNP MAPLE targets in pure argon. Electrostatic quadrupole plasma analysis was used to determine that a likely mechanism for generation of carbon impurities was a reaction between toluene vapor generated from the MAPLE target and the argon plasma originating from the magnetron sputtering process. Carbon impurities of codeposited films were significantly reduced by introducing argon-oxygen mixtures into the deposition chamber; reactive oxygen species such as O and O+ effectively removed carbon contamination of gold matrix during the codeposition processes. Increasing the oxygen to argon ratio decreased the magnetron target sputter rate, and hence hybrid process optimization to prevent gold matrix contamination and maintain a high sputter yield is needed. High resolution TEM with energy dispersive spectrometry elemental mapping was used to study carbon distribution throughout the gold matrix as well as embedded CNP clusters. This research has demonstrated that a hybrid MAPLE and magnetron sputtering codeposition process is a viable means for synthesis of composite thin films from premanufactured nanoscale constituents, and that cross-process contaminations can be overcome with understanding of hybrid plasma process interaction mechanisms.

  17. Non-uniform plasma distribution in dc magnetron sputtering: origin, shape and structuring of spokes

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Loquai, Simon; Ewa Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2015-12-01

    Non-homogeneous plasma distribution in the form of organized patterns called spokes was first observed in high power impulse magnetron sputtering (HiPIMS). In the present work we investigate the spoke phenomenon in non-pulsed low-current dc magnetron sputtering (DCMS). Using a high-speed camera the spokes were systematically studied with respect to discharge current, pressure, target material and magnetic field strength. Increase in the discharge current and/or gas pressure resulted in the sequential formation of two, then three and more spokes. The observed patterns were reproducible for the same discharge conditions. Spokes at low currents and pressures formed an elongated arrowhead-like shape and were commonly arranged in symmetrical patterns. Similar spoke patterns were observed for different target materials. When using a magnetron with a weaker magnetic field, spokes had an indistinct and diffuse shape, whereas in stronger magnetic fields spokes exhibited an arrowhead-like shape. The properties of spokes are discussed in relation to the azimuthally dependent electron-argon interactions. It is suggested that a single spoke is formed due to local gas breakdown and subsequent electron drift in the azimuthal direction. The spoke is self-sustained by electrons drifting in complex electric and magnetic fields that cause and govern azimuthally dependent processes: ionization, sputtering, and secondary electron emission. In this view plasma evolves from a single spoke into different patterns when discharge conditions are changed either by the discharge current, pressure or magnetic field strength. The azimuthal length of the spoke is associated with the electron-Ar collision frequency which increases with pressure and results in shortening of spoke until an additional spoke forms at a particular threshold pressure. It is proposed that the formation of additional spokes at higher pressures and discharge currents is, in part, related to the increased transport of

  18. Inhomogeneity of phase transition in lead titanate thin films formed by magnetron layer-by-layer deposition

    NASA Astrophysics Data System (ADS)

    Iljinas, Aleksandras; Stankus, Vytautas; Čyvienė, Jurgita; Abakevičienė, Brigita

    2015-10-01

    The formation of deposited ferroelectric perovskite PbTiO3 thin films using layer-by-layer reactive magnetron sputtering was investigated in this work. Deposition rates of each layer (PbO and TiO2) for 7.2 and 9.2 nm/min, respectively, were chosen there. Silicon (110) substrate with the heater was moved periodically and parallel to the magnetron cathodes during deposition. The heater temperature (380 °C-700 °C) has influence on the stoichiometry of thin films. Perovskite phase of lead titanate was not obtained without post annealing. The reasons for this are discussed in the work. The results of the structure of thin layers deposited on silicon substrates at 380 °C and annealed for one hour at 700 °C in air have shown that a pure perovskite phase of PbTiO3 is formed there.

  19. Dynamics of Magnetic Insulation Violation in Smooth-bore Magnetrons

    NASA Astrophysics Data System (ADS)

    Agafonov, A. V.; Fedorov, V. M.; Tarakanov, V. P.

    1997-05-01

    The efficiency of large and high-power magnetrons of GW power levels is less than 30% and an inherent pulse-length and repetition rate limitations seems to exist because of use of explosive field emission. Another approach is the development of low voltage high-efficiency magnetrons utilizing a secondary emission magnetron array with high repetition rate. The numerical model of nonstationary nonuniform secondary electron emission from a cathode surface has been developed. The results of the first steps in computer simulations of an electron cloud formation inside a smooth-bore magnetron under the condition of the back-bombardement instability (BBI) are presented. A mechanism of the violation of the magnetic insulation are considered. Calculations have been performed for a coaxial smooth-bore magnetron and for magnetrons with different types of azimuthal inhomogeneities which could help the grow of BBI, and for magnetrons of different aspect ratios. The results of computer simulation are compared with experimental data. The main calculations of the beam dynamics were carried out with PIC-code KARAT.

  20. Magnetron sputtering for the production of EUV mask blanks

    NASA Astrophysics Data System (ADS)

    Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

    2015-03-01

    Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

  1. High peak power gyroklystron with an inverted magnetron injection gun

    SciTech Connect

    Read, Michael E.; Lawson, Wesley; Miram, George; Marsden, David; Borchard, Philipp

    2005-12-01

    Calabazas Creek Research Inc. (CCR) has investigated the feasibility of a 30 GHz gyroklystron amplifier for driving advanced accelerators. Gyroklystrons have been shown to be efficient sources of high power radiation at frequencies above X-Band and are, therefore, well suited for driving high frequency accelerators. CCR's gyroklystron design includes a novel inverted magnetron injection gun (MIG) that allows support and cooling of the coaxial inner conductor of the circuit. This novel gun provides a very high quality electron beam, making it possible to achieve a cavity design with an efficiency of 54%. During Phase I, it was determined that the original frequency of 17 GHz was no longer well matched to the potential market. A survey of accelerator needs identified the Compact Linear Collider (CLIC) as requiring 30 GHz sources for testing of accelerator structures. Developers at CLIC are seeking approximately 25 MW per tube. This will result in the same power density as in the original 80 MW, 17 GHz device and will thus have essentially the same risk. CLIC will require initially 3-4 tubes and eventually 12-16 tubes. This quantity represents $5M-$10M in sales. In addition, gyroklystrons are of interest for radar systems and electron paramagnetic resonance (EPR) instruments. Following discussions with the Department of Energy, it was determined that changing the program goal to the CLIC requirement was in the best interest of CCR and the funding agency. The Phase I program resulted in a successful gyroklystron design with a calculated efficiency of 54% with an output power of 33 MW. Design calculations for all critical components are complete, and no significant technical issues remain.

  2. Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

    NASA Astrophysics Data System (ADS)

    Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

    2014-12-01

    Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

  3. The role of pulse length in target poisoning during reactive HiPIMS: application to amorphous HfO2

    NASA Astrophysics Data System (ADS)

    Ganesan, R.; Murdoch, B. J.; Treverrow, B.; Ross, A. E.; Falconer, I. S.; Kondyurin, A.; McCulloch, D. G.; Partridge, J. G.; McKenzie, D. R.; Bilek, M. M. M.

    2015-06-01

    In conventional reactive magnetron sputtering, target poisoning frequently leads to an instability that requires the reactive gas flow rate to be actively regulated to maintain a constant composition of the deposited layers. Here we demonstrate that the pulse length in high power impulse magnetron sputtering (HiPIMS) is important for determining the surface conditions on the target that lead to poisoning. By increasing the pulse length, a smooth transition can be achieved from a poisoned target condition (short pulses) to a quasi-metallic target condition (long pulses). Appropriate selection of pulse length eliminates the need for active regulation, enabling stable reactive magnetron sputter deposition of stoichiometric amorphous hafnium oxide (HfO2) from a Hf target. A model is presented for the reactive HiPIMS process in which the target operates in a partially poisoned mode with a distribution of oxide on its surface that depends on the pulse length.

  4. Harmonic Generation in the Multifrequency Recirculating Planar Magnetron

    NASA Astrophysics Data System (ADS)

    Exelby, S. C.; Greening, G. B.; Jordan, N. M.; Simon, D.; Zhang, P.; Lau, Y. Y.; Gilgenbach, R. M.

    2015-11-01

    The Multifrequency Recirculating Planar Magnetron (MFRPM) is a high power microwave source adapted from the Recirculating Planar Magnetrona, currently under investigation at the University of Michigan. The device features 2 dissimilar periodic structures allowing for the generation of (L-band) 1- and (S-band) 2-GHz high power microwave pulses simultaneously. These distinct frequencies offer the potential for variable coupling for defense applications, such as counter-IED. Experiments have been performed on the RPM, driven by the Michigan Electron Long Beam Accelerator with a Ceramic insulator (MELBA-C) using a -300kV, 1-10 kA, 0.3-1.0 us pulse applied to the cathode. Using the Mode Control Cathodeb and a coax-to-waveguide extraction system, the MFRPM has demonstrated simultaneous production of 20 MW at 1 GHz and 10 MW at 2 GHz. The L-band oscillator also produced both 2- and 4-GHz oscillations when the S-band oscillator turns on. These harmonics persist after the S-band oscillator turns off. Ongoing work will attempt to isolate these harmonics to measure the power accurately and confirm these observations. Supported by the Office of Naval Research grant no. N00014-13-1-0566 and L-3 Communications.

  5. Magnetron sputtered WS2; optical and structural analysis

    NASA Astrophysics Data System (ADS)

    Koçak, Y.; Akaltun, Y.; Gür, Emre

    2016-04-01

    Remarkable properties of graphene have renewed interest in inorganic, Transition Metal Dichalgogenits (TMDC) due to unique electronic and optical properties. TMDCs such as MoS2, MoSe2, WS2 and WSe2 have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as solar cells, transistors, photodetectors and electroluminescent devices in which the graphene is not actively used. So, fabrication and analysis of these films are important for new generation devices. In this work, polycrystalline WS2 films were grown by radio frequency magnetron sputtering (RFMS) on different substrates like n-Si(100), n-Si(111), p-Si(100), glass and fused silica. Structural, morphological, optical and electrical properties were investigated as a function of film thickness and RF power. From XRD analysis, signals from planes of (002), (100), (101), (110), (008) belong to the hegzagonal WS2 were obtained. Raman spectra of the WS2 show that there are two dominant peaks at ~351 cm-1 (in-plane phonon mode) and ~417 cm-1 (out-of-plane phonon mode). XPS analysis of the films has shown that binding energy and the intensity of tungsten 4f shells shifts by depending on the depth of the films which might be due to the wellknown preferential sputtering.

  6. The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tumarkin, A. V.; Razumov, S. V.; Gagarin, A. G.; Altynnikov, A. G.; Stozharov, V. M.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-02-01

    Submicron thin layers of BaZr x Ti1- x O3 are grown in-situ by RF magnetron sputtering of a ceramic target ( x = 0.50) on a substrate of Pt/ r-cut leucosapphire Al2O3. It is shown that the composition of the ferroelectric layer is not identical to the composition of the sputtered target and is shifted toward barium zirconate. The reasons for such behavior are discussed. The obtained samples are characterized by high breakdown voltages (1 MV/cm and higher). The structural and high-frequency dielectric properties are studied, and high tunability of the capacitance of thin layers is revealed.

  7. Characteristics of Cu-doped amorphous NiO thin films formed by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Sato, Kazuya; Kim, Sangcheol; Komuro, Shuji; Zhao, Xinwei

    2016-06-01

    Transparent conducting Cu-doped NiO thin films were deposited on quartz glass substrates by radio frequency magnetron spattering. The fabricated thin films were all in amorphous phase. A relatively high transmittance of 73% was achieved. The density ratio of Ni3+/(Ni2+ + Ni3+) ions in the films decreased with increasing O2 gas pressure in the fabrication chamber, which caused a decrease in the carrier concentration of the films. The increasing pressure also led to the increase in Hall mobility. By controlling the chamber pressure and substrate temperature, p-type transparent conducting NiO films with reasonable electrical properties were obtained.

  8. Composition-dependent structure of polycrystalline magnetron-sputtered V-Al-C-N hard coatings studied by XRD, XPS, XANES and EXAFS.

    PubMed

    Krause, Bärbel; Darma, Susan; Kaufholz, Marthe; Mangold, Stefan; Doyle, Stephen; Ulrich, Sven; Leiste, Harald; Stüber, Michael; Baumbach, Tilo

    2013-08-01

    V-Al-C-N hard coatings with high carbon content were deposited by reactive radio-frequency magnetron sputtering using an experimental combinatorial approach, deposition from a segmented sputter target. The composition-dependent coexisting phases within the coating were analysed using the complementary methods of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption near-edge spectroscopy (XANES) and extended X-ray absorption fine-structure spectroscopy (EXAFS). For the analysis of the X-ray absorption near-edge spectra, a new approach for evaluation of the pre-edge peak was developed, taking into account the self-absorption effects in thin films. Within the studied composition range, a mixed face-centred cubic (V,Al)(C,N) phase coexisting with a C-C-containing phase was observed. No indication of hexagonal (V,Al)(N,C) was found. The example of V-Al-C-N demonstrates how important a combination of complementary methods is for the detection of coexisting phases in complex multi-element coatings. PMID:24046506

  9. Composition-dependent structure of polycrystalline magnetron-sputtered V–Al–C–N hard coatings studied by XRD, XPS, XANES and EXAFS

    PubMed Central

    Krause, Bärbel; Darma, Susan; Kaufholz, Marthe; Mangold, Stefan; Doyle, Stephen; Ulrich, Sven; Leiste, Harald; Stüber, Michael; Baumbach, Tilo

    2013-01-01

    V–Al–C–N hard coatings with high carbon content were deposited by reactive radio-frequency magnetron sputtering using an experimental combinatorial approach, deposition from a segmented sputter target. The composition-dependent coexisting phases within the coating were analysed using the complementary methods of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption near-edge spectroscopy (XANES) and extended X-ray absorption fine-structure spectroscopy (EXAFS). For the analysis of the X-ray absorption near-edge spectra, a new approach for evaluation of the pre-edge peak was developed, taking into account the self-absorption effects in thin films. Within the studied composition range, a mixed face-centred cubic (V,Al)(C,N) phase coexisting with a C–C-containing phase was observed. No indication of hexagonal (V,Al)(N,C) was found. The example of V–Al–C–N demonstrates how important a combination of complementary methods is for the detection of coexisting phases in complex multi-element coatings. PMID:24046506

  10. Ordering of Fine Particles in a Planar Magnetron Plasma

    SciTech Connect

    Hayashi, Y.; Takahashi, K.; Totsuji, H.; Ishihara, O.; Sato, N.; Watanabe, Y.; Adachi, S.

    2008-09-07

    Fine particles injected in a planar magnetron were pushed upward by diffusible plasma, leading to being suspended by the force balance with the gravity and forming three-dimensional structures on the two-dimensional structure formed by particle strings.

  11. The Qualitative Magnetron -- Part of a Computer-Based Tutorial

    NASA Astrophysics Data System (ADS)

    Mead, William C.; Browman, Andrew A.; Silbar, Richard R.

    1998-10-01

    The magnetron is a ubiquitous electromagnetic device, widely used in radar and microwave oven applications. However, it is not usually a part of a general physics curriculum and many practicing physicists have only a vague notion of how it works. We are developing a set of computer-based, self-paced tutorials on particle accelerators that targets a broad audience, including undergraduate science majors and industrial technicians. The magnetron is covered in our module Motion in Electromagnetic Fields as an example of a crossed-field device. We originally expected this to be an advanced topic at the graduate student level. We were pleased to find we could give a satisfying description of how the magnetron works at an introductory level, using pictures and words, without equations. This talk will present our qualitative discussion of the magnetron, direct to you from the computer screen.

  12. Performance and test results of a regulated magnetron pulser

    SciTech Connect

    Rose, C.R.; Warren, D.S.

    1998-12-31

    This paper describes the test results and performance of a 5.0-kV, 750-mA, regulated current pulser used to drive an Hitachi model 2M130 2,425-MHz magnetron. The magnetron is used to modulate the plasma in a particle accelerator injector. In this application, precise and stable rf power is crucial to extract a stable and accurate particle beam. A 10-kV high-voltage triode vacuum tube with active feedback is used to control the magnetron current and output rf power. The pulse width may be varied from as little as ten microseconds to continuous duty by varying the width of a supplied gate pulse. The output current level can be programmed between 10 and 750 mA. Current regulation and accuracy are better than 1%. The paper discusses the overall performance of the pulser and magnetron including anode current and rf power waveforms, linearity compliance, and vacuum tube performance.

  13. Satellite power system (SPS) magnetron tube assessment study

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Taks performed to extend the data base and to define a technology development program for the magnetron directional amplifier for the SPS are reviewed. These include: (1) demonstrating the tracking of phase and amplitude of the microwave output to phase and amplitude references; (2) expanding the range of power over which the directional amplifier will operate; (3)recognizing the importance of amplitude control in overall system design and in simplifying power conditioning; (4) developing a preliminary design for the overall architecture of the power module; (5) demonstrating magnetron starting using the amplitude control system; (6) mathematically modelling and performing a computerized study of the pyrolytic graphite radiating fin; (7) defining the mass of the magnetic circuit for the SPS tube; (8) noise measurement; (9) achieving harmonic suppression by notch reflection filters; (10) estimating the mass of the transmitting antenna; (11) developing a magnetron package with power generation, phase control, and power condition functions; and (12) projecting magnetron package characteristics.

  14. Factors determining the efficiency of magnetron sputtering. Optimization criteria

    NASA Astrophysics Data System (ADS)

    Rogov, A. V.; Kapustin, Yu. V.; Martynenko, Yu. V.

    2015-02-01

    We report on the results of experimental study of the dependence of sputtering energy efficiency K w in a dc planar magnetron sputtering setup on the discharge power, working gas pressure, magnetic field, cathode erosion depth, and the structure of the gas puffing system and anode. We propose that this parameter be used for comparing the degree of perfection of the magnetron design irrespective of the magnetron size and structural features. The results of measurements of K w in sputtering of Al, Ti, Cr, Cu, Zn, Zr, Nb, Mo, Ag, In, Sn, Ta, W, Pt, and Au are considered. The optimization criterion is worked out for the magnetic system of the magnetron, which ensures the minimal working pressure and the maximal sputtering rate for the cathode. The results are analyzed theoretically.

  15. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  16. Substrate heating and cooling during magnetron sputtering of copper target

    NASA Astrophysics Data System (ADS)

    Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S.; Baykov, Pavel B.; Karzin, Vitaliy V.

    2016-02-01

    Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density.

  17. 3D Magnetron simulation with CST STUDIO SUITE

    SciTech Connect

    Balk, Monika C.

    2011-07-01

    The modeling of magnetrons compared to other tubes is more difficult since it requires 3D modeling rather than a 2D investigation. This is not only due to the geometry which can include complicated details to be modeled in 3D but also due to the interaction process itself. The electric field, magnetic field and particle movement span a 3D space. In this paper 3D simulations of a strapped magnetron with CSTSTUDIO SUITE{sup TM} are presented. (author)

  18. Characteristics of end Hall ion source with magnetron hollow cathode discharge

    NASA Astrophysics Data System (ADS)

    Tang, Deli; Wang, Lisheng; Pu, Shihao; Cheng, Changming; Chu, Paul K.

    2007-04-01

    An end Hall ion source with magnetron hollow cathode discharge is described. The source is suitable for high current, low energy ion beam applications such as Hall current plasma accelerators. The end Hall ion source is based on an anode layer thruster with closed drift electrons that move in a closed path in the E × B field. Only a simple magnetron power supply is used in the ion source. The special configuration enables uninterrupted and expanded operation with oxygen as well as other reactive gases because of the absence of an electron source in the ion source. In our evaluation, the ion beam current was measured by a circular electrostatic probe and the energy distribution of the ion beam was measured by a retarding potential analyzer (RPA). An ion beam current density of up to 10 mA/cm2 was obtained at a mean ion energy of 100-250 eV using Ar or O2. The ion source can be operated in a stable fashion at a discharge voltage between 200 and 500 V and without additional electron triggering. The discharge power of the ion source can be easily changed by adjusting the gas flow rate and anode voltage. No water cooling is needed for power from 500 W to 2 kW. The simple and rugged ion source is suitable for industrial applications such as deposition of thin films with enhanced adhesion. The operational characteristics of the ion source are experimentally determined and discussed.

  19. Continuous and nanostructured TiO2 films grown by dc sputtering magnetron.

    PubMed

    Sánchez, O; Vergara, L; Font, A Climent; de Melo, O; Sanz, R; Hernández-Vélez, M

    2012-12-01

    The growth of Anatase nanostructured films using dc reactive magnetron sputtering and post-annealing treatment is reported. TiO2 has been deposited on Porous Anodic Alumina Films used as templates which were previously grown in phosphoric acid solution and etched to modify their pore diameters. This synthesis via results in the formation of vertically aligned and spatially ordered TiO2 nanostructures replicating the underlying template. Previously, the growth optimization of TiO2 thin films deposited by dc magnetron sputtering on flat silicon substrates was done. The crystalline structure and Ti in-depth concentration profile were determined by grazing incidence X-ray diffraction and Rutherford backscattering spectrometry, respectively. The surface morphology of the samples was explored by mean of a Field Emission Gun scanning electron microscope. Optical properties of the nanostructured samples were studied by using the reflectance spectra received in the UV-visible range. In these spectra different band gap values and complex light absorption features were observed. PMID:23447970

  20. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. I. Negative ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Mass and energy spectra of negative ions in magnetron sputtering discharges have been investigated with an energy-dispersive mass spectrometer. The dc magnetrons have been operated in the same reactive Ar/O{sub 2} atmosphere but with three different target materials: Cu, In, and W. Besides negative ions of the working gas, a variety of target metal containing negative molecular ions were found in the discharge. Their occurrence is strongly dependent on the target material. It has been correlated to the electron affinity and the bond strength of the molecules which has been calculated by density functional theory. Energy spectra of the negative ions exhibit three contributions that are clearly distinguishable. Their different origin is discussed as electron attachment in the gas phase and at the target surface, and molecule fragmentation during transport from target to substrate. The latter two contributions again significantly deviate for different target material. The high-energy part of the spectra has been analyzed with respect to the energy the particles gain upon release from the surface. It suggests that bigger molecules formed on the surface are released by ion-assisted desorption.

  1. Studying of nanocomposite films’ structure and properties obtained by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Tleukenov, Y. O.; Plotnikov, S. V.; Erdybaeva, N. K.; Pogrebnyak, A. D.

    2016-02-01

    Various approaches to creating multicomponent na-nocomposite coatings of high and superhigh hardness (from 30 to 100 ± 120 GPa) are reviewed with particular emphasis placed on mechanisms underlying the increase in hardness in thin coatings. Nanocomposite Nb-Al-N films fabricated by magnetron sputtering were researched in this work. Two stable crystalline structural states were found in the films: NbNch and solid solution B1-NbxAl1-xNyO1-y, and also an amorphous component associated with aluminum oxynitride with reactive magnetron sputtering. A relationship of substructural characteristics sensitivity with the current and nanohardness and Knoop hardness characteristic was determined in this paper. Recent changes in the range of 29-33.5 GPa and 46-48 GPa, respectively. Initial principle calculations of NbN and Nb2AlN phases and NbN/AlN heterostructures were carried out for the interpretation of the results. Deposited nanocomposite films with the given mechanical properties may be used as wear resistant or protective coatings. On the basis of these results, it can be assumed that two stable crystalline structural states were found in the films: B1-NbNx and solid solution with a composition close to the B1-Nb0-67Al0-33N. The films also contain an amorphous component associated with aluminum nitride.

  2. Study on the influence of nitrogen on titanium nitride in a dc post magnetron sputtering plasma system

    NASA Astrophysics Data System (ADS)

    Moni Borah, Sankar; Bailung, Heremba; Ratan Pal, Arup; Chutia, Joyanti

    2008-10-01

    The characteristics of direct current (dc) glow discharge plasma have been studied in a post magnetron device with an argon and nitrogen gas mixture. The introduction of nitrogen modifies the discharge leading to modifications of plasma parameters, transport mechanism and the cathode sheath. The electron energy distribution function, density and temperature profile are measured to characterize the discharge. Measured plasma potential profiles show the modification of the structure of the cathode sheath and confinement space variation. Optical emission spectroscopy is used to identify prominent transitions of the different species in the discharge. The discharge mode in argon undergoes a transition from metallic mode to reactive mode when nitrogen concentration exceeds argon.

  3. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  4. Anisotropy of the electron component in a cylindrical magnetron discharge. II. Application to real magnetron discharge.

    PubMed

    Porokhova, I A; Golubovskii, Yu B; Behnke, J F

    2005-06-01

    The physical processes occurring in electrode regions and the positive column of a cylindrical magnetron discharge in crossed electric and magnetic fields are investigated based on the solution of the Boltzmann kinetic equation by a multiterm decomposition of the electron phase space distribution function in terms of spherical tensors. The influence of the distribution function anisotropy on the absolute values and radial profiles of the electron density and rates of various transport and collision processes is analyzed. The spiral lines for the directed particle and energy transport are obtained to illustrate the anisotropy effects in dependence on the magnetic field. The electron equipressure surfaces are constructed in the form of ellipsoids of pressure and their transformation in the cathode and anode regions is studied. A strong anisotropy of the energy flux tensor in contrast to a weak anisotropy of the momentum flux density tensor is found. Particular results are obtained for the cylindrical magnetron discharge in argon at pressure 3 Pa, current 200 mA, and magnetic fields ranging within 100 and 400 G. PMID:16089880

  5. Reactive sputter deposition of boron nitride

    SciTech Connect

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied {minus}300 V dc bias.

  6. Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering

    SciTech Connect

    Yoshimura, Kazuki; Miki, Takeshi; Tanemura, Sakae

    1997-09-01

    Niobium oxide electrochromic thin films were prepared by reactive DC magnetron sputtering and their electrochromic properties for Li intercalation and durability were studied. Chronoamperometric analyses revealed that the extended space-charge limited model by Zhang et al. is applicable to Nb{sub 2}O{sub 5} films. Crystallized Nb{sub 2}O{sub 5} films showed excellent electrochromism and stability over many coloration-bleaching cycles. The best performance was obtained for films with a substrate temperature of 500 C and an oxygen flow rate of 10 sccm. Electrochromic materials enable dynamic control of the throughput of radiant energy, and play a significant role in energy-efficient smart windows in order to reduce the cooling and lighting costs of buildings.

  7. Morphology of epitaxial TiN(001) grown by magnetron sputtering

    SciTech Connect

    Karr, B.W.; Petrov, I.; Cahill, D.G.; Greene, J.E.

    1997-03-01

    The evolution of surface morphology and microstructure during growth of single crystal TiN(001) is characterized by {ital in situ} scanning tunneling microscopy and postdeposition plan-view transmission electron microscopy. The TiN layers are grown on MgO at 650{lt}T{lt}750{degree}C using reactive magnetron sputter deposition in pure N{sub 2}. The surface morphology is dominated by growth mounds with an aspect ratio of {approx_equal}0.006; both the roughness amplitude and average separation between mounds approximately follow a power law dependence on film thickness, t{sup {alpha}}, with {alpha}=0.25{plus_minus}0.07. Island edges show dendritic geometries characteristic of limited step-edge mobility at the growth temperature. {copyright} {ital 1997 American Institute of Physics.}

  8. Reactive arthritis

    MedlinePlus

    Reactive arthritis is a group of conditions that may involve the joints, eyes, and urinary and genital systems. ... The exact cause of reactive arthritis is unknown. It occurs most often in men younger than age 40. It may follow an infection in the urethra ...

  9. The impact of negative oxygen ion bombardment on electronic and structural properties of magnetron sputtered ZnO:Al films

    SciTech Connect

    Bikowski, Andre; Welzel, Thomas; Ellmer, Klaus

    2013-06-17

    In order to study the impact of negative oxygen ion bombardment on the electronic transport properties of ZnO:Al films, a systematic magnetron sputtering study from ceramic targets with excitation frequencies from DC to 27 MHz, accompanied by strongly varying discharge voltages, has been performed. Higher plasma excitation frequencies significantly improve the transport properties of ZnO:Al films. The effect of the bombardment of the films by energetic particles (negative oxygen ions) can be explained by the dynamic equilibrium between the formation of acceptor-like oxygen interstitials compensating the extrinsic donors and the self-annealing of the interstitial defects at higher deposition temperatures.

  10. RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

    NASA Astrophysics Data System (ADS)

    Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

    2014-10-01

    Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

  11. Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

    NASA Astrophysics Data System (ADS)

    Hecimovic, Ante

    2012-10-01

    High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

  12. Magnetron deposition of coatings with evaporation of the target

    NASA Astrophysics Data System (ADS)

    Bleykher, G. A.; Krivobokov, V. P.; Yuryeva, A. V.

    2015-12-01

    We analyze the potentialities of the plasma in various types of magnetron sputtering systems including pulsed and liquid-target systems for producing intense emission of atoms and high-rate deposition of coatings. For this purpose, a mathematical model of thermal and erosion processes in the target is developed based on the heat conduction equations taking into account first-order phase transitions. Using this model, we determine the parameters of magnetrons for which intense evaporation of atoms from the target surface takes place. It is shown that evaporation leads to an increase in the growth rate of metal coatings by 1-2 orders of magnitude as compared to conventional magnetron systems based only on collisional sputtering.

  13. Very low pressure high power impulse triggered magnetron sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  14. Improved Poisson solver for cfa/magnetron simulation

    SciTech Connect

    Dombrowski, G.E.

    1996-12-31

    E{sub dc}, the static field of a device having vane-shaped anodes, has been determined by application of Hockney`s method, which in turn uses Buneman`s cyclic reduction. This result can be used for both cfa and magnetrons, but does not solve the general space-charge fields. As pointed out by Hockney, the matrix of coupling capacitive factors between the vane-defining mesh points can also be used to solve the Poisson equation for the entire cathode-anode domain. Space-charge fields of electrons between anode electrodes can now be determined. This technique also computes the Ramo function for the entire region. This method has been applied to the magnetron. Extension to the cfa with many different space-charge bunches does not appear to be practicable. Calculations for the type 4J50 magnetron by the various degrees of accuracy in solving the Poisson equation are compared with experimental measurements.

  15. Quantitative analysis of sputter processes in a small magnetron system

    SciTech Connect

    Knittel, Ivo; Gothe, Marc; Hartmann, Uwe

    2005-11-15

    Sputter deposition of titanium in argon from a small circular magnetron is characterized. The dependence of the deposition rate on pressure, power, and target-substrate distance has been measured. A framework for the application of the analytic approach by Keller and Simmons of ballistic and diffusive transport to simple three-dimensional sputter geometries is developed and applied. The sputter yield and the pressure-distance product are determined from the data set as the only fit parameters of the model. For the entire range of operation of the magnetron, the sputter process can be described in terms of the relatively simple approach.

  16. A high-efficiency relativistic magnetron with the filled dielectric

    NASA Astrophysics Data System (ADS)

    Wang, Xiao-Yu; Fan, Yu-Wei; Shi, Di-fu; Shu, Ting

    2016-07-01

    Relativistic magnetron (RM) is a popular high power microwave device. Filling the resonant cavities with the low-loss dielectric is a well-proven technology that improves the performance of RM. In order to enhance the power efficiency, a dielectric-filled relativistic magnetron (DFRM) is presented and investigated numerically with KARAT code in this paper. The simulation results indicate that the maximum power efficiency is enhanced from 50.0% in the conventional RM to 56.0% in the DFRM when the applied voltage and the magnetic field are 280 kV and 0.5 T, respectively. Besides, the simulation results are analyzed and discussed.

  17. Improved computer modelling of magnetron injection guns for gyrotrons

    SciTech Connect

    Caplan, M.; Thorington, C.

    1984-01-01

    A variable mesh finite-element electron gun design code has been developed to simulate hollow beams produced by magnetron injection guns. Very accurate solutions of the self-consistent space charge forces are obtained by using a computational mesh, distorted in a way which allows a high density of mesh points within the hollow beam. A generalized hybrid model for cathode emission has been incorporated which combines temperature limited and space charge limited emission in a way justified from empirical and physical arguments. Beam characteristics of a magnetron injection gun are presented as the transition from temperature limited to space charge limited operation is made. Limited comparisons with experimental results are presented.

  18. Magnetron sputtered boron films and Ti/B multilayer structures

    SciTech Connect

    Makowiecki, D.M.; Jankowski, A.F.

    1991-03-11

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor 5 deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity 10 from grazing to normal incidence.

  19. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  20. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  1. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  2. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  3. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  4. Reactive Arthritis

    MedlinePlus

    ... with treatment and may cause joint damage. What Research Is Being Conducted on Reactive Arthritis? Researchers continue ... such as methotrexate and sulfasalazine. More information on research is available from the following websites: National Institutes ...

  5. Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices

    NASA Astrophysics Data System (ADS)

    Drozdov, Yu. N.; Masterov, D. V.; Pavlov, S. A.; Parafin, A. E.; Yunin, P. A.

    2015-11-01

    We consider the main factors determining the growth of YBa2Cu3O7-δ high- T c superconductor films during magnetron sputtering in the planar axial geometry. Special attention is paid to the increase of the growth rate of the films suitable for superconductor electronics devices. Magnetron sputtering is used for obtaining YBa2Cu3O7-δ films with high structural and electrophysical characteristics for a growth rate up to 200 nm/h, which were used in constructing microwave disk resonators and long Josephson junctions on bicrystal substrates. The unloaded Q factor of cavities exceeds 80000 at a frequency of 7.1 GHz at a temperature of 77 K, which corresponds to the best results in this field. Josephson junction of length 50-350 μm are characterized by critical current density j c = 12-33 kA/cm2 at T = 77 K and j c = 93-230 kA/cm2 at T = 6 K in zero magnetic field. The characteristic voltage I c R n is 0.8-1.96 mV.

  6. The electromagnetic shielding of Ni films deposited on cenosphere particles by magnetron sputtering method

    NASA Astrophysics Data System (ADS)

    Yu, Xiaozheng; Shen, Zhigang

    2009-09-01

    Ni-coated cenosphere particles were successfully fabricated by an ultrasonic-assisted magnetron sputtering equipment. Their surface morphology and microstructure were analyzed using field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). FE-SEM results indicate that the Ni films coated by magnetron sputtering are uniform and compact. Ni film uniformity was related with the sputtering power and a large uniform film could be achieved at lower sputtering power. XRD results imply that the Ni film coated on cenospheres was a face-centered cubic (fcc) structure and the crystallization of film sample increases with increasing the sputtering power. The electromagnetic interference (EMI) shielding effectiveness (SE) of Ni-coated cenosphere particles were measured to be 4-27 dB over a frequency range 80-100 GHz, higher than those of uncoated cenosphere particles. The higher sputtering power and Ni film thickness are the higher EMI SE of the specimens. Ni-coated cenosphere particles are most promising alternative candidates for millimeter wave EMI shielding due to their lightweight, low cost, ease of processing, high floating time, good dispersion and tunable conductivities as compared with typical electromagnetic wave countermeasure materials.

  7. A Radio Frequency Quadrupole Instrument for use with Accelerator Mass Spectrometry: Application to Low Kinetic Energy Reactive Isobar Suppression and Gas--Phase Anion Reaction Studies

    NASA Astrophysics Data System (ADS)

    Eliades, John Alexander

    A radio frequency (rf) quadrupole instrument, currently known as an Isobar Separator for Anions (ISA), has been integrated into an Accelerator Mass Spectrometry (AMS) system to facilitate anion--gas reactions before the tandem accelerator. An AMS Cs+ sputter source provided ≥ 15 keV ions that were decelerated in the prototype ISA to < 20 eV for reaction in a single collision cell and re-accelerated for AMS analysis. Reaction based isobar suppression capabilities were assessed for smaller AMS systems and a new technique for gas--phase reaction studies was developed. Isobar suppression of 36S-- and 12C3-- for 36Cl analysis, and YF3-- and ZrF3-- for 90Sr analysis were studied in NO2 with deceleration to ≤ 12 eV. Observed attenuation cross sections, sigma [x 10--15 cm2], were sigma(S-- + NO2) = 6.6, sigma(C3-- + NO2) = 4.2, sigma(YF3-- + NO 2) = 7.6, sigma(ZrF3-- + NO2) = 19. With 8 mTorr NO2, relative attenuations of S-- /Cl-- ˜ 10--6, C 3--/Cl-- ˜ 10--7 , YF3--/SrF3-- ˜ 5 x 10--5 and ZrF3-- /SrF3-- ˜ 4 x 10--6 were observed with Cl-- ˜ 30% and SrF 3-- > 90% transmission. Current isobar attenuation limits with ≤ 1.75 MV accelerator terminal voltage and ppm impurity levels were calculated to be 36S--/Cl-- ˜ 4 x 10--16, 12C3 --/Cl-- ˜ 1.2 x 10--16, 90YF3--/SrF3-- ˜ 10--15 and 90ZrF3 --/SrF3-- ˜ 10--16 . Using 1.75 MV, four 36Cl reference standards in the range 4 x 10--13 ≤ 36Cl/Cl ≤ 4 x 10 --11 were analyzed with 8 mTorr NO2. The measured 36Cl/Cl ratios plotted very well against the accepted values. A sample impurity content S/Cl ≤ 6 x 10--5 was measured and a background level of 36S--/Cl ≤ 9 x 10--15 was determined. Useful currents of a wide variety of anions are produced in AMS sputter sources and molecules can be identified relatively unambiguously by stripping fragments from tandem accelerators. Reactions involving YF3 --, ZrF3--, S-- and SO-- + NO2 in the ISA analyzed by AMS are described, and some interesting reactants are identified.

  8. Geometrical Aspects of a Hollow-cathode Magnetron (HCM)

    SciTech Connect

    Cohen, Samuel, A.; Wang, Zhehui

    1998-11-01

    A hollow-cathode magnetron (HCM), built by surrounding a planar sputtering-magnetron cathode with a hollow-cathode structure (HCS), is operable at substantially lower pressures than its planar-magnetron counterpart. We have studied the dependence of magnetron operational parameters on the inner diameter D and length L of a cylindrical HCS. Only when L is greater than L sub zero, a critical length, is the HCM operable in the new low-pressure regime. The critical length varies with HCS inner diameter D. Explanations of the lower operational pressure regime, critical length, and plasma shape are proposed and compared with a one-dimension diffusion model for energetic or primary electron transport. At pressures above 1 mTorr, an electron-impact ionization model with Bohm diffusion at a temperature equivalent to one-half the primary electron energy and with an ambipolar constraint can explain the ion-electron pair creation required to sustain the discharge. The critical length L sub zero is determined by the magnetization length of the primary electrons.

  9. Contributions to the velocity spread of magnetron injection guns

    SciTech Connect

    Danly, B.G.; Kimura, T.; Kreischer, K.E.

    1995-12-31

    Various contributions to the velocity spread in magnetron injection guns for gyrotron applications have been studied, including the effects of misalignments, field errors, and cathode surface roughness. The net result of these effects is a substantial increase in spread over the ballistic spread usually calculated with typical gun codes.

  10. Influence of reactive sputter deposition conditions on crystallization of zirconium oxide thin films

    SciTech Connect

    Sethi, Guneet; Sunal, Paul; Horn, Mark W.; Lanagan, Michael T.

    2009-05-15

    Zirconium oxide thin films were prepared through reactive magnetron sputtering with a zirconium target using pulsed-dc and radio frequency (rf) sources. The film crystallization was studied with respect to sputtering growth variables such as sputtering power, sputtering pressure, source frequency, oxygen pressure, substrate temperature, and substrate material. The crystallization was studied through x-ray diffraction (XRD) 2{theta} scans and was quantified with peak full width at half maximum and crystallite size. Crystallization of the films was found to occur over a broad range of sputter deposition parameters, while the amorphous phase was produced only at high sputtering pressure and low sputtering power. With a decrease in sputtering pressure or power, the crystallite size decreased. Energy dispersive x-ray spectroscopy, electron microscopy, and XRD analysis revealed that at very low pressures, these films are polyphase assemblages of cubic phases of oxygen deficient zirconium oxides such as ZrO and Zr{sub 2}O. When the sputtering oxygen content of these films is increased above 25%, monoclinic-ZrO{sub 2} phase is stabilized in the films and the deposition rate decreases. However, in the case of rf sputtering, an additional peak corresponding to tetragonal phase of ZrO{sub 2} is observed. The sputtering parameters were related to physical parameters such as sputtering mode, ion energy, and substrate temperature, which influence crystallinity.

  11. Characterization of high power impulse magnetron sputtering discharges

    NASA Astrophysics Data System (ADS)

    Hala, Matej

    Paper I: In the first paper, we present a new approach in the characterization of the high power pulsed magnetron sputtering (HiPIMS) discharge evolution—time- and species-resolved plasma imaging—employing a set of band-pass optical interference filters suitable for the isolation of the emission originating from different species populating the plasma. We demonstrate that the introduction of such filters can be used to distinguish different phases of the discharge, and to visualize numerous plasma effects including background gas excitations during the discharge ignition, gas shock waves, and expansion of metal-rich plasmas. In particular, the application of this technique is shown on the diagnostics of the 200 µs long non-reactive HiPIMS discharges using a Cr target. Paper II: In order to gain further information about the dynamics of reactive HiPIMS discharges, both fast plasma imaging and time- and space-resolved optical emission spectroscopy (OES) are used for a systematic investigation of the 200 µs long HiPIMS pulses operated in Ar, N2 and N 2/Ar mixtures and at various pressures. It is observed that the dense metal plasma created next to the target propagates in the reactor at a speed ranging from 0.7 to 3.5 km s-1, depending on the working gas composition and the pressure. In fact, it increases with higher N 2 concentration and with lower pressure. The visible form of the propagating plasma wave changes from a hemispherical shape in Ar to a drop-like shape extending far from the target with increasing N2 concentration, owing to the significant emission from molecular N2. Interestingly, the evidence of the target self-sputtering is found for all investigated conditions, including pure N2 atmosphere. Paper III: Here, we report on the time- and species-resolved plasma imaging analysis of the dynamics of the 200 µs long HiPIMS discharges above a Cr target ignited in pure O2. It is shown that the discharge emission is dominated solely by neutral and

  12. Fine control of the amount of preferential <001> orientation in DC magnetron sputtered nanocrystalline TiO2 films

    NASA Astrophysics Data System (ADS)

    Stefanov, B.; Granqvist, C. G.; Österlund, L.

    2014-11-01

    Different crystal facets of anatase TiO2 are known to have different chemical reactivity; in particular the {001} facets which truncates the bi-tetrahedral anatase morphology are reported to be more reactive than the usually dominant {101} facets. Anatase TiO2 thin films were deposited by reactive DC magnetron sputtering in Ar/O2 atmosphere and were characterized using Rietveld refined grazing incidence X-ray diffraction, atomic force microscopy and UV/Vis spectroscopy. By varying the partial O2 pressure in the deposition chamber, the degree of orientation of the grains in the film could be systematically varied with preferred <001> orientation changing from random upto 39% as determined by March-Dollase method. The orientation of the films is shown to correlate with their reactivity, as measured by photo-degradation of methylene blue in water solutions. The results have implications for fabrication of purposefully chemically reactive thin TiO2 films prepared by sputtering methods.

  13. Reactive arthritis.

    PubMed

    Keat, A

    1999-01-01

    Reactive arthritis is one of the spondyloarthropathy family of clinical syndromes. The clinical features are those shared by other members of the spondyloarthritis family, though it is distinguished by a clear relationship with a precipitating infection. Susceptibility to reactive arthritis is closely linked with the class 1 HLA allele B27; it is likely that all sub-types pre-dispose to this condition. The link between HLA B27 and infection is mirrored by the development of arthritis in HLA B27-transgenic rats. In this model, arthritis does not develop in animals maintained in a germ-free environment. Infections of the gastrointestinal, genitourinary and respiratory tract appear to provoke reactive arthritis and a wide range of pathogens has now been implicated. Although mechanistic parallels may exist, reactive arthritis is distinguished from Lyme disease, rheumatic fever and Whipple's disease by virtue of the distinct clinical features and the link with HLA B27. As in these conditions both antigens and DNA of several micro-organisms have been detected in joint material from patients with reactive arthritis. The role of such disseminated microbial elements in the provocation or maintenance of arthritis remains unclear. HLA B27-restricted T-cell responses to microbial antigens have been demonstrated and these may be important in disease pathogenesis. The importance of dissemination of bacteria from sites of mucosal infection and their deposition in joints has yet to be fully understood. The role of antibiotic therapy in the treatment of reactive arthritis is being explored; in some circumstances, both the anti-inflammatory and anti-microbial effects of certain antibiotics appear to be valuable. The term reactive arthritis should be seen as a transitory one, reflecting a concept which may itself be on the verge of replacement, as our understanding of the condition develops. Nevertheless it appropriately describes arthritis that is associated with demonstrable

  14. Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Cristea, D.; Crisan, A.; Cretu, N.; Borges, J.; Lopes, C.; Cunha, L.; Ion, V.; Dinescu, M.; Barradas, N. P.; Alves, E.; Apreutesei, M.; Munteanu, D.

    2015-11-01

    The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOz thin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposition: the flow of the reactive gases mixture (N2 and O2, with a constant concentration ratio of 17:3); the substrate voltage bias (grounded, -50 V or -100 V) and the substrate (glass, (1 0 0) Si or high speed steel). The obtained films exhibit significant differences. The variation of the deposition parameters induces variations of the composition, microstructure and morphology. These differences cause variation of the electrical resistivity essentially correlated with the composition and structural changes. The gradual decrease of the Ta concentration in the films induces amorphization and causes a raise of the resistivity. The dielectric characteristics of some of the high resistance TaxNyOz films were obtained in the samples with a capacitor-like design (deposited onto high speed steel, with gold pads deposited on the dielectric TaxNyOz films). Some of these films exhibited dielectric constant values higher than those reported for other tantalum based dielectric films.

  15. Ion distribution measurements to probe target and plasma processes in electronegative magnetron discharges. II. Positive ions

    SciTech Connect

    Welzel, Th.; Ellmer, K.; Naumov, S.

    2011-04-01

    Spectra of the ion mass and energy distributions of positive ions in reactive (Ar/O{sub 2}) and nonreactive (Ar) dc magnetron sputtering discharges have been investigated by energy-resolved mass spectrometry. The results of three sputter target materials, i.e., Cu, In, and W are compared to each other. Besides the main gas constituents, mass spectra reveal a variety of molecular ions which are dependent on the target material. In reactive mode, ArO{sup +} is always observed in Ar/O{sub 2} but molecules containing Ar and the metal were exclusively found for the Cu target. The occurrence of the different ions is explained in the context of their bond strengths obtained from density functional theory calculations. The energy spectra generally contain the known low-energy peak corresponding to the plasma potential. Differently extended high-energy tails due to sputtered material were observed for the different targets. Besides these, high-energetic ions were detected with up to several 100 eV. Their energies are significantly different for Ar{sup +} and O{sup +} with Ar{sup +} strongly depending on the target material. The spectra are discussed together with results from transport of ions in matter (TRIM) calculation to elucidate the origin of these energetic ions.

  16. Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

    NASA Astrophysics Data System (ADS)

    Murphy, Neil R.; Sun, Lirong; Grant, John T.; Jones, John G.; Jakubiak, Rachel

    2015-10-01

    Molybdenum oxide films were deposited using modulated pulse power magnetron sputtering (MPPMS) from a molybdenum target in a reactive environment where the flow rate of oxygen was varied from 0 sccm to 2.00 sccm. By varying the amount of reactive oxygen available during deposition, the composition of the films ranged from metallic Mo to fully stoichiometric MoO3, when the molybdenum target became poisoned, due to the formation of a dielectric surface oxide coating. Film compositions were verified using high energy resolution x-ray photoelectron spectroscopy. Target poisoning occurred at an oxygen flow rate of 1.25 sccm and reversed when the flow rate decreased to about 1.00 sccm. MoO3 films deposited via MPPMS had densities of 3.8 g cm-3, 81% of the density of crystalline α-MoO3 as determined by x-ray reflectivity (XRR). In addition, XRR and atomic force microscopy data showed sub-nanometer surface roughness values. From spectroscopic ellipsometry, the measured refractive index of the MoO3 films at 589 nm was 1.97 with extinction coefficient values <0.02 at wavelengths above the measured absorption edge of 506 nm (2.45 eV).

  17. Experimental investigation of a relativistic magnetron with diffraction output on a repetitive short pulse generator

    SciTech Connect

    Li, Wei; Zhang, Jun; Zhang, Zi-cheng; Sun, Xiao-liang; Liu, Yong-gui

    2014-04-15

    An experimental investigation of a relativistic Magnetron with Diffraction Output (MDO) on a short voltage pulse generator, which has maximum repetition rate of 100 Hz and plateau of 2.5 ns, is detailed in this paper. Compared to the conversional solid cathode, a direct Density Modulation Cathode is capable for desired microwave radiation. When applied voltage is 200 kV and axial magnetic field is ∼0.12 T, the MDO radiates 120 MW of microwave with 2.3 GHz of central frequency. Power conversion efficiency reaches 22%. Pulse duration is 3 ns. At repetition rates of 50 Hz and 100 Hz, output microwave powers range from 90 MW to 120 MW. Life time is up to 10{sup 4} shots.

  18. Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Niu, Jian-wen; Ma, Rui-xin; Wang, Yuan-yuan; Li, Shi-na; Cheng, Shi-yao; Liu, Zi-lin

    2014-09-01

    Amorphous indium-gallium-zinc oxide (IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency (RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.

  19. Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Bodeux, Romain; Michau, Dominique; Josse, Michaël; Maglione, Mario

    2014-12-01

    Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO2/SiO2/Si substrates from Ba2LnFeNb4O15 ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ɛ ˜150 and σ ˜10-6 Ω-1 cm-1 at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar Ea ˜0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.

  20. Relativistic performance analysis of a high current density magnetron injection gun

    SciTech Connect

    Barnett, L. R.; Luhmann, N. C. Jr.; Chiu, C. C.; Chu, K. R.

    2009-09-15

    Electron beam quality is essential to the performance of millimeter-wave gyroamplifiers, particularly the gyrotron traveling-wave tube amplifier, which is extremely sensitive to the electron velocity spread and emission uniformity. As one moves up in power and frequency, the quality of the electron beam becomes even more critical. One aspect of the electron beam formation technology which has received relatively little attention has been the performance analysis of the electron beam itself. In this study, a 100 kV, 8 A magnetron injection gun with a calculated perpendicular-to-parallel velocity ratio of 1.4 and axial velocity spread of 3.5% has been designed, tested, and analyzed. It is shown that the equipment precision and a fully relativistic data analysis model afford sufficient resolution to allow a verification of the theoretical predictions as well as a quantitative inference to the surface roughness of the cathode used.

  1. Relativistic performance analysis of a high current density magnetron injection gun

    NASA Astrophysics Data System (ADS)

    Barnett, L. R.; Luhmann, N. C.; Chiu, C. C.; Chu, K. R.

    2009-09-01

    Electron beam quality is essential to the performance of millimeter-wave gyroamplifiers, particularly the gyrotron traveling-wave tube amplifier, which is extremely sensitive to the electron velocity spread and emission uniformity. As one moves up in power and frequency, the quality of the electron beam becomes even more critical. One aspect of the electron beam formation technology which has received relatively little attention has been the performance analysis of the electron beam itself. In this study, a 100 kV, 8 A magnetron injection gun with a calculated perpendicular-to-parallel velocity ratio of 1.4 and axial velocity spread of 3.5% has been designed, tested, and analyzed. It is shown that the equipment precision and a fully relativistic data analysis model afford sufficient resolution to allow a verification of the theoretical predictions as well as a quantitative inference to the surface roughness of the cathode used.

  2. A new solid state extractor pulser for the FNAL magnetron ion source

    SciTech Connect

    Bollinger, D. S.; Lackey, J.; Larson, J.; Triplett, K.

    2015-10-05

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  3. A new solid state extractor pulser for the FNAL magnetron ion source

    NASA Astrophysics Data System (ADS)

    Bollinger, D. S.; Lackey, J.; Larson, J.; Triplett, K.

    2016-02-01

    A new solid state extractor pulser has been installed on the Fermi National Accelerator Laboratory (FNAL) magnetron ion source, replacing a vacuum tube style pulser that was used for over 40 years. The required ion source extraction voltage is 35 kV for injection into the radio frequency quadrupole. At this voltage, the old pulser had a rise time of over 150 μs due to the current limit of the vacuum tube. The new solid state pulsers are capable of 50 kV, 100 A peak current pulses and have a rise time of 9 μs when installed in the operational system. This paper will discuss the pulser design and operational experience to date.

  4. Ex situ and in situ catalyst deposition for CNT synthesis by RF-magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Scalese, S.; Scuderi, V.; Simone, F.; Pennisi, A.; Privitera, V.

    2008-05-01

    Radio frequency magnetron sputtering has been used for the synthesis of aligned carbon nanotubes (CNTs) on SiO 2/Si substrate. The results were obtained by depositing catalytic nano-particles in advance (ex situ) or simultaneously to the C deposition (in situ), which have been compared showing that the oxidation of the metal catalyst deposited in advance is detrimental for the good outcome of the CNTs growth. An in situ catalyst deposition allows to get rid of the contamination problem and to grow aligned CNTs on a substrate, as shown by scanning electron microscopy. Transmission electron microscopy shows that the so-achieved CNTs own a bamboo-like structure and the catalytic Ni nanoparticle is on the tip of the CNTs. Our method allows to perform catalyst deposition and growth of CNT on a SiO 2/Si substrate simultaneously and its use can be extended to a variety of catalytic elements and substrates, in principle without many efforts.

  5. Microstructure and optoelectronic properties of galliumtitanium-zinc oxide thin films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Shou-bu; Lu, Zhou; Zhong, Zhi-you; Long, Hao; Gu, Jin-hua; Long, Lu

    2016-07-01

    Gallium-titanium-zinc oxide (GTZO) transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.

  6. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  7. Preparation and characterization of Gd{sub 2}O{sub 3} thin films by RF magnetron sputtering

    SciTech Connect

    Pattabi, Manjunatha; Thilipan, G. Arun Kumar

    2013-02-05

    Gd{sub 2}O{sub 3} films were deposited on to glass substrates held at room temperature using radio frequency (RF) magnetron sputtering, at a RF power of 63 W and argon pressure maintained at 1 Multiplication-Sign 10{sup -2}mbar. The morphology was studied by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The band gaps obtained from optical absorption studies are in the range of 3.4 and 4.02 eV, after annealing in air at 380 Degree-Sign C for 1 hour.

  8. Tribological performance of hybrid filtered arc-magnetron coatings - Part I: Coating deposition process and basic coating properties characterization

    SciTech Connect

    Gorokhovsky, Vladimir; Bowman, C.; Gannon, Paul E.; VanVorous, D.; Voevodin, A. A.; Rutkowski, A.; Muratore, C.; Smith, Richard J.; Kayani, Asghar N.; Gelles, David S.; Shutthanandan, V.; Trusov, B. G.

    2006-12-04

    Aircraft propulsion applications require low-friction and wear resistant surfaces that operate under high contact loads in severe environments. Recent research on supertough and low friction nanocomposite coatings produced with hybrid plasma deposition processes was demonstrated to have a high potential for such demanding applications. However, industrially scalable hybrid plasma technologies are needed for their commercial realization. The Large area Filtered Arc Deposition (LAFAD) process provides atomically smooth coatings at high deposition rates over large surface areas. The LAFAD technology allows functionally graded, multilayer, super-lattice and nanocomposite architectures of multi-elemental coatings via electro-magnetic mixing of two plasma flows composed of different metal ion vapors. Further advancement can be realized through a combinatorial process using a hybrid filtered arc-magnetron deposition system. In the present study, multilayer and nanostructured TiCrCN/TiCr +TiBC composite cermet coatings were deposited by the hybrid filtered arc-magnetron process. Filtered plasma streams from arc evaporated Ti and Cr targets, and two unbalanced magnetron sputtered B4C targets, were directed to the substrates in the presence of reactive gases. A multiphase nanocomposite coating architecture was designed to provide the optimal combination of corrosion and wear resistance of advanced steels (Pyrowear 675) used in aerospace bearing and gear applications. Coatings were characterized using SEM/EDS, XPS and RBS for morphology and chemistry, XRD and TEM for structural analyses, wafer curvature and nanoindentation for stress and mechanical properties, and Rockwell and scratch indentions for adhesion. Coating properties were evaluated for a variety of coating architectures. Thermodynamic modeling was used for estimation of phase composition of the top TiBC coating segment. Correlations between coating chemistry, structure and mechanical properties are discussed.

  9. Comprehensive computer model for magnetron sputtering. II. Charged particle transport

    SciTech Connect

    Jimenez, Francisco J. Dew, Steven K.; Field, David J.

    2014-11-01

    Discharges for magnetron sputter thin film deposition systems involve complex plasmas that are sensitively dependent on magnetic field configuration and strength, working gas species and pressure, chamber geometry, and discharge power. The authors present a numerical formulation for the general solution of these plasmas as a component of a comprehensive simulation capability for planar magnetron sputtering. This is an extensible, fully three-dimensional model supporting realistic magnetic fields and is self-consistently solvable on a desktop computer. The plasma model features a hybrid approach involving a Monte Carlo treatment of energetic electrons and ions, along with a coupled fluid model for thermalized particles. Validation against a well-known one-dimensional system is presented. Various strategies for improving numerical stability are investigated as is the sensitivity of the solution to various model and process parameters. In particular, the effect of magnetic field, argon gas pressure, and discharge power are studied.

  10. Microwave beamed power technology improvement. [magnetrons and slotted waveguide arrays

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1980-01-01

    The magnetron directional amplifier was tested for (1) phase shift and power output as a function of gain, anode current, and anode voltage, (2) background noise and harmonics in the output, (3) long life potential of the magnetron cathode, and (4) high operational efficiency. Examples of results were an adequate range of current and voltage over which 20 dB of amplification could be obtained, spectral noise density 155 dB below the carrier, 81.7% overall efficiency, and potential cathode life of 50 years in a design for solar power satellite use. A fabrication method was used to fabricate a 64 slot, 30 in square slotted waveguide array module from 0.020 in thick aluminum sheet. The test results on the array are discussed.

  11. Equilibrium and Stability of the Brillouin Flow in Inverted Magnetron

    NASA Astrophysics Data System (ADS)

    Simon, David; Lau, Yue Ying; Franzi, Matt; Greening, Geoff; Gilgenbach, Ronald; Marhdahl, Peter; Hoff, Brad; Luginsland, John

    2012-10-01

    One embodiment of the novel recirculating planar magnetron, RPM [1] utilizes an inverted configuration for fast startup. While the negative mass behavior on the thin electron layer model [2] is well-known for the inverted magnetron, the corresponding behavior for the equilibrium Brillouin flow [3] is an open question. Simulations using the particle-in-cell codes ICEPIC and/or MAGIC will be performed and compared to the solution to the eigenvalue problem that governs the stability of Brillouin flow, leading to a fundamental study of the flow's negative, positive, and infinite mass properties. Research supported by AFOSR (grant#: FA9550-10-1-0104), AFRL, and L-3 Communications Electron Devices. [4pt] [1] R. M. Gilgenbach, et.al., IEEE Trans. Plasma Sci. 39, 980 (2011); Also patent pending.[0pt] [2] D. M. French, et al., Appl. Phys. Lett. 97, 111501 (2010).[0pt] [3] D. Simon, et al., Phys. Plasmas 19, 043103 (2012).

  12. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  13. Optical properties of magnetron-sputtered and rolled aluminum

    SciTech Connect

    Van Gils, S.; Dimogerontakis, Th.; Buytaert, G.; Stijns, E.; Terryn, H.; Skeldon, P.; Thompson, G.E.; Alexander, M.R.

    2005-10-15

    The optical properties of magnetron-sputtered aluminum and AA1050 aluminum alloy sheet have been examined qualitatively using total reflectance and quantitatively by means of visible spectroscopic ellipsometry (VISSE). Significant changes in reflectance and optical constants are observed, which are related to the incorporation of oxide in the aluminum bulk. The role of such oxide was determined by VISSE using the Bruggeman effective-medium approximation, with the findings validated by x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy.

  14. Deposition of copper coatings in a magnetron with liquid target

    SciTech Connect

    Tumarkin, A. V. Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V.

    2015-12-15

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to–400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  15. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-09-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres.

  16. High Peak Power Gyroklystron with an Inverted Magnetron Injection Gun

    NASA Astrophysics Data System (ADS)

    Read, Michael; Neilson, Jeff; Borchard, Philipp; Ives, Lawrence; Lawson, Wes

    2006-01-01

    This paper describes the design of a 25 MW, 30 GHz gyroklystron amplifier based on a coaxial RF structure. The design includes an inverted magnetron injection gun (MIG) for positioning and cooling the inner conductor. The gun produces a very low spread beam that contributes to a device efficiency of 54%. Details are given of the gun, RF structure, input and output couplers and collector.

  17. Deposition of copper coatings in a magnetron with liquid target

    NASA Astrophysics Data System (ADS)

    Tumarkin, A. V.; Kaziev, A. V.; Kolodko, D. V.; Pisarev, A. A.; Kharkov, M. M.; Khodachenko, G. V.

    2015-12-01

    Copper coatings were deposited on monocrystalline Si substrates using a magnetron discharge with a liquid cathode in the metal vapour plasma. During the deposition, the bias voltage in the range from 0 V to-400 V was applied to the substrate. The prepared films were investigated by a scanning electron microscope, and their adhesive properties were studied using a scratch tester. It was demonstrated that the adhesion of the deposited films strongly depends on the bias voltage and varies in a wide range.

  18. Characterisation of Mg biodegradable stents produced by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Elmrabet, N.; Botterill, N.; Grant, D. M.; Brown, P. D.

    2015-10-01

    Novel Mg-minitubes for biodegradable stent applications have been produced using PVD magnetron sputtering. The minitubes were characterised, as a function of annealing temperature, using a combination of SEM/EDS, XRD and hardness testing. The as-deposited minitubes exhibited columnar grain structures with high levels of porosity. Slight alteration to the crystal structure from columnar to equiaxed grain growth was demonstrated at elevated temperature, along with increased material densification, hardness and corrosion resistance.

  19. Electrochromism in surface modified crystalline WO3 thin films grown by reactive DC magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Karuppasamy, A.

    2013-10-01

    In the present work, tungsten oxide thin films were deposited at various oxygen chamber pressures (1.0-5.0 × 10-3 mbar) by maintaining the sputtering power density and argon pressure constant at 3.0 W/cm2 and 1.2 × 10-2 mbar, respectively. The role of surface morphology and porosity on the electrochromic properties of crystalline tungsten oxide thin films has been investigated. XRD and Raman studies reveal that all the samples post annealed at 450 ̊C in air for 3.0 h settle in monoclinic crystal system of tungsten oxide (W18O49). Though the phase of material is indifferent to oxygen pressure variations (PO2), morphology and film density shows a striking dependence on PO2. A systematic study on plasma (OES), morphology, optical and electrochromic properties of crystalline tungsten oxide reveal that the films deposited at PO2 of 2.0 × 10-3 mbar exhibit better coloration efficiency (58 cm2/C), electron/ion capacity (Qc: -25 mC/cm2), and reversibility (92%). This is attributed to the enhanced surface properties like high density of pores and fine particulates (100 nm) and to lesser bulk density of the film (ρ/ρo = 0.84) which facilitates the process of intercalation/de-intercalation of protons and electrons. These results show good promise toward stable and efficient crystalline tungsten oxide based electrochromic device applications.

  20. The study of titanium oxynitride coatings solubility deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Leonova, L. A.; Boytsova, E. L.; Pustovalova, A. A.

    2016-06-01

    To improve hemocompatibility of cardiovascular stents the coatings based on titanium oxides and oxynitrides were used. In the present work the morphology, surface properties (wettability and surface energy), and in vitro solubility of the ternary system Ti-N-O coating were investigated. Experimentally, low dissolution rate of the coating in saline NaCl (0,9%) was confirmed. Instrumental methods of quantitative analysis (XRF, AES) revealed that the Ti-N-O coating is chemical-resistant and does not change the qualitative and quantitative composition of body fluids.

  1. Passive mode control in the recirculating planar magnetron

    NASA Astrophysics Data System (ADS)

    Franzi, Matthew; Gilgenbach, Ronald; Lau, Y. Y.; Hoff, Brad; Greening, Geoff; Zhang, Peng

    2013-03-01

    Preliminary experiments of the recirculating planar magnetron microwave source have demonstrated that the device oscillates but is susceptible to intense mode competition due, in part, to poor coupling of RF fields between the two planar oscillators. A novel method of improving the cross-oscillator coupling has been simulated in the periodically slotted mode control cathode (MCC). The MCC, as opposed to a solid conductor, is designed to electromagnetically couple both planar oscillators by allowing for the propagation of RF fields and electrons through resonantly tuned gaps in the cathode. Using the MCC, a 12-cavity anode block with a simulated 1 GHz and 0.26 c phase velocity (where c is the speed of light) was able to achieve in-phase oscillations between the two sides of the device in as little as 30 ns. An analytic study of the modified resonant structure predicts the MCC's ability to direct the RF fields to provide tunable mode separation in the recirculating planar magnetron. The self-consistent solution is presented for both the degenerate even (in phase) and odd (180° out of phase) modes that exist due to the twofold symmetry of the planar magnetrons.

  2. Passive mode control in the recirculating planar magnetron

    SciTech Connect

    Franzi, Matthew; Gilgenbach, Ronald; Lau, Y. Y.; Greening, Geoff; Zhang, Peng; Hoff, Brad

    2013-03-15

    Preliminary experiments of the recirculating planar magnetron microwave source have demonstrated that the device oscillates but is susceptible to intense mode competition due, in part, to poor coupling of RF fields between the two planar oscillators. A novel method of improving the cross-oscillator coupling has been simulated in the periodically slotted mode control cathode (MCC). The MCC, as opposed to a solid conductor, is designed to electromagnetically couple both planar oscillators by allowing for the propagation of RF fields and electrons through resonantly tuned gaps in the cathode. Using the MCC, a 12-cavity anode block with a simulated 1 GHz and 0.26 c phase velocity (where c is the speed of light) was able to achieve in-phase oscillations between the two sides of the device in as little as 30 ns. An analytic study of the modified resonant structure predicts the MCC's ability to direct the RF fields to provide tunable mode separation in the recirculating planar magnetron. The self-consistent solution is presented for both the degenerate even (in phase) and odd (180 Degree-Sign out of phase) modes that exist due to the twofold symmetry of the planar magnetrons.

  3. Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

    SciTech Connect

    Kossoy, Anna E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.; Leosson, Kristjan; Olafsson, Sveinn

    2015-03-15

    The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute it to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.

  4. Mechanism of Hydrogenated Microcrystalline Si Film Deposition by Magnetron Sputtering Employing a Si Target and H2/Ar Gas Mixture

    NASA Astrophysics Data System (ADS)

    Fukaya, Kota; Tabata, Akimori; Sasaki, Koichi

    2009-03-01

    The mechanism of hydrogenated microcrystalline silicon (µc-Si:H) film deposition by magnetron sputtering employing a Si target and H2/Ar gas mixture has been investigated by measuring Si and H atom densities in the gas phase by laser-induced fluorescence spectroscopy. The crystalline volume fraction of the film correlated positively with H atom density. The variation in Si atom density indicated the increase in sputtering yield from the Si target in the H2/Ar discharge. The surface of the Si target immersed in the H2/Ar discharge was hydrogenated. Therefore, it is reasonable to expect the production of SiHx molecules (typically SiH4) from the hydrogenated Si target via reactive ion etching. Since SiHx molecules produced from the target may function as a deposition precursor, the mechanism of µc-Si:H film deposition is considered to be similar to that of plasma-enhanced chemical vapor deposition (PECVD) employing a SiH4/H2 gas mixture. The advantage of magnetron sputtering deposition over PECVD is the production of SiHx molecules without using toxic, explosive SiH4.

  5. The Impact of Accelerated Right Prefrontal High-Frequency Repetitive Transcranial Magnetic Stimulation (rTMS) on Cue-Reactivity: An fMRI Study on Craving in Recently Detoxified Alcohol-Dependent Patients

    PubMed Central

    Herremans, Sarah C.; Van Schuerbeek, Peter; De Raedt, Rudi; Matthys, Frieda; Buyl, Ronald; De Mey, Johan; Baeken, Chris

    2015-01-01

    In alcohol-dependent patients craving is a difficult-to-treat phenomenon. It has been suggested that high-frequency (HF) repetitive transcranial magnetic stimulation (rTMS) may have beneficial effects. However, exactly how this application exerts its effect on the underlying craving neurocircuit is currently unclear. In an effort to induce alcohol craving and to maximize detection of HF-rTMS effects to cue-induced alcohol craving, patients were exposed to a block and event-related alcohol cue-reactivity paradigm while being scanned with fMRI. Hence, we assessed the effect of right dorsolateral prefrontal cortex (DLPFC) stimulation on cue-induced and general alcohol craving, and the related craving neurocircuit. Twenty-six recently detoxified alcohol-dependent patients were included. First, we evaluated the impact of one sham-controlled stimulation session. Second, we examined the effect of accelerated right DLPFC HF-rTMS treatment: here patients received 15 sessions in an open label accelerated design, spread over 4 consecutive days. General craving significantly decreased after 15 active HF-rTMS sessions. However, cue-induced alcohol craving was not altered. Our brain imaging results did not show that the cue-exposure affected the underlying craving neurocircuit after both one and fifteen active HF-rTMS sessions. Yet, brain activation changes after one and 15 HF-rTMS sessions, respectively, were observed in regions associated with the extended reward system and the default mode network, but only during the presentation of the event-related paradigm. Our findings indicate that accelerated HF-rTMS applied to the right DLPFC does not manifestly affect the craving neurocircuit during an alcohol-related cue-exposure, but instead it may influence the attentional network. PMID:26295336

  6. What Is Reactive Arthritis?

    MedlinePlus

    ... Arthritis PDF Version Size: 69 KB November 2014 What is Reactive Arthritis? Fast Facts: An Easy-to- ... Information About Reactive Arthritis and Other Related Conditions What Causes Reactive Arthritis? Sometimes, reactive arthritis is set ...

  7. Reactive HiPIMS deposition of SiO2/Ta2O5 optical interference filters

    NASA Astrophysics Data System (ADS)

    Hála, Matěj; Vernhes, Richard; Zabeida, Oleg; Klemberg-Sapieha, Jolanta-Ewa; Martinu, Ludvik

    2014-12-01

    In this contribution, based on the detailed understanding of the processes at the target during reactive high power impulse magnetron sputtering (HiPIMS), we demonstrate the deposition of both low- and high-index films and their implementation in optical interference filters with enhanced performance. We first investigate strategies for stabilizing the arc-free HiPIMS discharges above Si and Ta targets in the presence of oxygen. We show that hysteresis can be suppressed for these two target materials by suitable pulse-management strategies, ensuring good process stability without having to rely on any feedback control. Afterwards, we discuss the room temperature deposition of optically transparent SiO2 and Ta2O5 single layers as well as the fabrication of SiO2/Ta2O5 stacks such as 7 layer Bragg reflectors and 11 layer Fabry-Perot interference filters. We also analyze the optical and mechanical characteristics of these various coatings and compare them with their counterparts obtained by radio-frequency magnetron sputtering (RFMS). Among other findings, we observe that the coatings prepared by HiPIMS present higher refractive index and lower surface roughness values, suggesting a denser microstructure. In addition, the HiPIMS-deposited optical filters exhibit a better optical performance than their counterparts fabricated by RFMS, but it is especially with respect to the mechanical properties such as scratch resistance and low residual stress, that the coatings prepared by HiPIMS present the most dramatic improvements (up to 42% and 72% enhancement, respectively). Finally, we show that the stress values obtained for the HiPIMS-deposited SiO2 and Ta2O5 coatings are lower than for other deposition techniques commonly used in the fabrication of optical interference filters.

  8. Crystallographic texture, morphology, optical, and microwave dielectric properties of dc magnetron sputtered nanostructured zirconia thin films

    SciTech Connect

    Pamu, D.; Sudheendran, K.; Ghanashyam Krishna, M.; James Raju, K. C.

    2008-03-15

    Nanocrystalline zirconia thin films have been deposited at ambient temperature by dc magnetron sputtering on glass and quartz substrates. The crystallite size as calculated from the x-ray diffraction patterns in the films varies between 10 and 25 nm and is dependent on oxygen percentage in the sputtering gas. Interestingly, the presence of monoclinic and cubic phase is observed for the films deposited on glass at 40%, 60%, and 80% of oxygen in the sputtering gas, while those deposited on quartz showed only the monoclinic phase. Refractive index decreased with increase in percentage of oxygen in the sputter gas. Significantly, even at 100% oxygen in the sputtering gas, films of thickness of the order of 500 nm have been grown starting from the metallic Zr target. The dielectric constants were measured using the extended cavity perturbation technique at X-band frequency (8-12 GHz). The dielectric constant and loss tangent showed a very small decrease with increase in frequency but exhibited a stronger dependence on processing parameters. The dielectric constants of the films at microwave frequencies ranged between 12.16 and 22.3.

  9. Production Of Multi-magnetron Plasma By Using Polyphase Ac Glow Discharge In An Improved Multi-pole Magnetic Field

    NASA Astrophysics Data System (ADS)

    Matsumoto, Kazunori; Motoki, Kentaro; Miyamoto, Masahiro; Uetani, Yasuhiro

    1998-10-01

    Effects of an improved multi-pole magnetic field on a plasma production generated by a polyphase ac glow discharge with multiple electrodes have been investigated. Conventional configuration of the multi-pole magnetic filed has been modified to suppress plasma losses at both ends of the chamber due to ExB drift motion. The modified multi-pole magnetic field has enabled us to produce a multiple magnetron-plasma at a considerably low pressure less than mTorr. The low temperature plasma has been widely used as the fine processing technology of a dry etching and as the thin film formation technology of a sputtering coating. Large-scale plasmas which can be generated at a low gas-pressure have been desired for more wider dry etching and greater sputter coating. The purpose of this study is to develop a large-scale and low-cost plasma generator by using a polyphase ac power source with the low frequency. In this session, we will present the experimental result as to a multiple magnetron-plasma generated in the modified twenty-four poles magnetic field by using the twenty-four-phase ac power source with the commercial electric power frequency of 60Hz. The ac power is supplied to twenty-four electrodes which are fixed to the water-cooled chamber-wall through sheet insulators so that the electrodes can be cooled indirectly.

  10. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  11. CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

    PubMed

    Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

    2014-12-24

    Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell. PMID:25426540

  12. Characterization of Ta-Si-N coatings prepared using direct current magnetron co-sputtering

    NASA Astrophysics Data System (ADS)

    Chen, Yung-I.; Lin, Kun-Yi; Wang, Hsiu-Hui; Cheng, Yu-Ru

    2014-06-01

    Ta-Si-N coatings were prepared using reactive direct current magnetron co-sputtering on silicon substrates. When the sputtering powers and N2 flow ratio were varied, Ta-Si-N coatings exhibited various chemical compositions and crystalline characteristics. The high-Si-content Ta-Si-N coatings exhibited an amorphous phase in the as-deposited states, whereas the low-Si-content coatings exhibited a face-centered cubic phase or an amorphous phase depending on the N content. This study evaluated the application of amorphous Ta-Si-N coatings, such as the protective coatings on glass molding dies, in high-temperature and oxygen-containing atmospheres for longed operation durations. To explore the oxidation resistance and mechanical properties of the Ta-Si-N coatings, annealing treatments were conducted in a 1%O2-99%Ar atmosphere at 600 °C for 4-100 h. The material characteristics and oxidation behavior of the annealed Ta-Si-N coatings were examined using atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and a nanoindentation tester. The Si oxidized preferentially in the Ta-Si-N coatings. The in-diffusion of oxygen during 600 °C annealing was restricted by the formation of an amorphous oxide scale consisting of Si and O.

  13. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    SciTech Connect

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-05-08

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O{sub 2}/H{sub 2}O environment. Ar{sup +} with an average kinetic energy of {approx}5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by {approx}70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H{sub 2} formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient.

  14. Structural, optical and electrochromic properties of RF magnetron sputtered WO3 thin films

    NASA Astrophysics Data System (ADS)

    Madhavi, V.; Kondaiah, P.; Hussain, O. M.; Uthanna, S.

    2014-12-01

    Thin films of tungsten trioxide (WO3) have been prepared by RF reactive magnetron sputtering of tungsten target at different substrate temperatures in the range 303-673 K and at fixed oxygen partial pressure of 6×10-2 Pa and sputter pressure of 4 Pa. The effect of substrate temperature on the structural, morphological, optical and electrochromic properties of WO3 films was systematically studied. The films formed at 303 K were of X-ray amorphous, while those deposited at substrate temperatures ≥473 K were crystallized into orthorhombic phase WO3. The crystallite size of the films increased from 17 to 24 nm with increase of substrate temperature from 473 to 673 K. Raman studies confirmed that the presence of O-W-O and W=O bonds in WO3 films. The surface morphology of the films was significantly varied with substrate temperature. The optical transmittance data revealed that the optical band gap increased from 3.08 to 3.48 eV and refractive index increased from 2.18 to 2.26 with increase of substrate temperature from 303 to 673 K respectively. The WO3 films formed at substrate temperature of 473 K exhibited better optical transmittance modulation of 40% between colored and bleached state with a color efficiency of 33.8 cm2/C and diffusion coefficient of 1.85×10-11 cm2/s.

  15. Thermal stability and thermo-mechanical properties of magnetron sputtered Cr-Al-Y-N coatings

    SciTech Connect

    Rovere, Florian; Mayrhofer, Paul H.

    2008-01-15

    Cr{sub 1-x}Al{sub x}N coatings are promising candidates for advanced machining and high temperature applications due to their good mechanical and thermal properties. Recently the authors have shown that reactive magnetron sputtering using Cr-Al targets with Al/Cr ratios of 1.5 and Y contents of 0, 2, 4, and 8 at % results in the formation of stoichiometric (Cr{sub 1-x}Al{sub x}){sub 1-y}Y{sub y}N films with Al/Cr ratios of {approx}1.2 and YN mole fractions of 0%, 2%, 4%, and 8%, respectively. Here, the impact of Y on thermal stability, structural evolution, and thermo-mechanical properties is investigated in detail. Based on in situ stress measurements, thermal analyzing, x-ray diffraction, and transmission electron microscopy studies the authors conclude that Y effectively retards diffusional processes such as recovery, precipitation of hcp-AlN and fcc-YN, grain growth, and decomposition induced N{sub 2} release. Hence, the onset temperature of the latter shifts from {approx}1010 to 1125 deg. C and the hardness after annealing at T{sub a}=1100 deg. C increases from {approx}32 to 39 GPa with increasing YN mole fraction from 0% to 8%, respectively.

  16. Corrosion resistance of CrN thin films produced by dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ruden, A.; Restrepo-Parra, E.; Paladines, A. U.; Sequeda, F.

    2013-04-01

    In this study, the electrochemical behavior of chromium nitride (CrN) coatings deposited on two steel substrates, AISI 304 and AISI 1440, was investigated. The CrN coatings were prepared using a reactive d.c. magnetron sputtering deposition technique at two different pressures (P1 = 0.4 Pa and P2 = 4 Pa) with a mixture of N2-Ar (1.5-10). The microstructure and crystallinity of the CrN coatings were investigated using X-ray diffraction. The aqueous corrosion behavior of the coatings was evaluated using two methods. The polarization resistance (Tafel curves) and electrochemical impedance spectra (EIS) in a saline (3.5% NaCl solution) environment were measured in terms of the open-circuit potentials and polarization resistance (Rp). The results indicated that the CrN coatings present better corrosion resistance and Rp values than do the uncoated steel substrates, especially for the coatings produced on the AISI 304 substrates, which exhibited a strong enhancement in the corrosion resistance. Furthermore, better behavior was observed for the coatings produced at lower pressures (0.4 Pa) than those grown at 4 Pa.

  17. Optical coatings and thin films for display technologies using closed-field magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gibson, Desmond R.; Brinkley, Ian; Walls, J. M.

    2004-11-01

    "Closed field" magnetron (CFM) sputtering offers high throughput, flexible deposition process for optical coatings and thin films required in display technologies. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. CFM provides a room temperature deposition process with high ion current density, low bias voltage and reactive oxidation in the entire volume around the rotating substrate drum carrier, depositing films over a large surface area at a high rate with excellent and reproducible properties. Machines based on CFM are scaleable to meet a range of batch and in-line size requirements. Thin film thickness control to <+/-1% is accomplished using time, although quartz crystal or optical monitoring are used for more demanding applications. Fine layer thickness control and deposition of graded index layers is also assisted with a special rotating shutter mechanism. This paper presents data on optical properties for CFM deposited coatings relevant to displays, including anti-reflection, IR blocker and color and thermal control filters, graded coatings, barrier coatings as well as conductive transparent oxides such as indium tin oxide. Benefits of the CFM process for a range of display technologies; OLED, EL and projection are described.

  18. Fabrication and Electrical Characterization of the Si/ZnO/ZnO:Al Structure Deposited by RF-Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Alaya, A.; Djessas, K.; El Mir, L.; Khirouni, K.

    2016-06-01

    The electrical transport properties of the structures of Si(p)/ZnO(i)/ZnO: Al(3%) and Si(p)/PS/ZnO(i)/ZnO: Al(3%) deposited by radio-frequency-magnetron sputtering were investigated and compared by using current-voltage and impedance spectroscopy measurements in a wide temperature range of 80-300 K. Aluminum-doped ZnO is considered to be one of the most important transparent conducting oxide materials due to its high conductivity, good transparency and low cost. From the current-voltage-temperature (I-V-T) characteristics, it was found that both structures had a good rectifying behavior. This behavior decreases according to the porous silicon layer. The variation of the conductance with frequency indicates the semiconducting behavior and superposition of different conduction mechanisms. The insertion of the porous silicon layer results in a decrease of conductivity, which is attributed to reduced conductivity of defect-rich porous silicon.

  19. Magnetic properties and high frequency characteristics of FeCoN thin films

    NASA Astrophysics Data System (ADS)

    Hwang, Tae-Jong; Lee, Joonsik; Kim, Ki Hyeon; Kim, Dong Ho

    2016-05-01

    (Fe65Co35)N soft magnetic thin films were prepared by reactive RF magnetron sputtering with the sputtering power of 100 W on thermally oxidized Si substrate in various nitrogen partial pressures (PN2). A strong uniaxial in-plane magnetic anisotropy with the easy-axis coercive field as low as 1˜2 Oe was observed in films grown at PN2 in the range from 3.3% to 5.5%. The saturation magnetizations for those films were about 20 KG. Outside this range, almost isotropic magnetization curves were observed. Vector network analyzer and grounded coplanar waveguide were used to measure the ferromagnetic resonance (FMR) signals up to 25 GHz. The FMR signals were detected only in anisotropic films and their FMR frequencies were well fit to the Kittel formula. The obtained g-values and damping parameters at magnetic fields >20 kOe for films grown at PN2 of 3.3%, 4.8% and 5.5% were 1.96, 1.86, 1.92 and 0.0055, 0.0047, 0.0046, respectively. This low damping factor qualifies FeCoN thin films for high-frequency applications.

  20. Particle contamination formation and detection in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Weiss, C.A.; Sequeda, F.; Huang, C.

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  1. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  2. The Magnetron Method for the Determination of e/m for Electrons: Revisited

    ERIC Educational Resources Information Center

    Azooz, A. A.

    2007-01-01

    Additional information concerning the energy distribution function of electrons in a magnetron diode valve can be extracted. This distribution function is a manifestation of the effect of space charge at the anode. The electron energy distribution function in the magnetron is obtained from studying the variation of the anode current with the…

  3. Simulation of the velocity spread in magnetron injection guns

    SciTech Connect

    Liu, C.; Antonsen, T.M. Jr.; Levush, B.

    1996-06-01

    The velocity spread associated with phase mixing due to dc space charge in a magnetron injection gun (MIG) is investigated. A simple model is introduced to describe the mixing process. Simulations are performed by using the results of the EGUN trajectory calculation for initial conditions at the entrance of the drift region. Results for a 170 GHz gun are obtained and compared with EGUN simulations. This new model provides a more accurate and efficient approach for analyzing the velocity spread due to mixing in MIG`s.

  4. Magnetron co-sputtering system for coating ICF targets

    SciTech Connect

    Hsieh, E.J.; Meyer, S.F.; Halsey, W.G.; Jameson, G.T.; Wittmayer, F.J.

    1981-12-09

    Fabrication of Inertial Confinement Fusion (ICF) targets requires deposition of various types of coatings on microspheres. The mechanical strength, and surface finish of the coatings are of concern in ICF experiments. The tensile strength of coatings can be controlled through grain refinement, selective doping and alloy formation. We have constructed a magnetron co-sputtering system to produce variable density profile coatings with high tensile strength on microspheres. The preliminary data on the properties of a Au-Cu binary alloy system by SEM and STEM analysis is presented.

  5. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  6. Liner conformality in ionized magnetron sputter metal deposition processes

    SciTech Connect

    Hamaguchi, S.; Rossnagel, S.M.

    1996-07-01

    The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ionized magnetron sputter deposition processes is studied numerically and experimentally. The numerical simulator (SHADE) used to predict the surface topography is based on the shock-tracking method for surface evolution. The simulation results are in good agreement with experimentally observed thin-film topography. It is shown that combination of direct deposition and trench-bottom resputtering results in good conformality of step coverages and the amount of the resputtering needed for the good conformality is almost independent of trench aspect ratios. {copyright} {ital 1996 American Vacuum Society}

  7. Characterization of Magnetron Sputtered Coatings by Pulsed Eddy Current Techniques

    SciTech Connect

    Mulligan, Chris; Lee Changqing; Danon, Yaron

    2005-04-09

    A method that uses induced pulsed eddy currents for characterization of thick magnetron sputtered Nb coatings on steel is presented in this paper. The objectives of this work are to develop a system for rapid quantitative nondestructive inspection of coatings as well as to determine the correlation between coating properties, such as density and purity, and eddy current measured resistivity of coatings. A two-probe differential system having higher sensitivity and less noise than a one-probe system with 2-D scanning ability was developed.

  8. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  9. Metal-AlN cermet solar selective coatings deposited by direct current magnetron sputtering technology

    NASA Astrophysics Data System (ADS)

    Zhang, Qi-Chu

    1998-02-01

    A series of metal-aluminium nitride (M-AlN) cermet materials for solar selective coatings was deposited by a novel direct current (d.c.) magnetron sputtering technology. Aluminium nitride was used as the ceramic component in the cermets, and stainless steel (SS), nickel-based alloy 0022-3727/31/4/003/img1 (NiCr), molybdenum-based alloy 0022-3727/31/4/003/img2 (TZM) and tungsten were used as the metallic components. The aluminium nitride ceramic and metallic components of the cermets were deposited by simultaneously running both an aluminium target and another metallic target in a gas mixture of argon and nitrogen. The ceramic component was deposited by d.c. reactive sputtering and the metallic component by d.c. non-reactive sputtering. The total sputtering gas pressure was 0.8-1.0 Pa and the partial pressure of reactive nitrogen gas was set at 0.020-0.025 Pa which is sufficiently high to ensure that a nearly pure AlN ceramic sublayer was deposited by d.c. reactive sputtering. Because of the excellent nitriding resistance of stainless steel and the other alloys and metal, a nearly pure metallic sublayer was deposited by d.c. sputtering at this low nitrogen partial pressure. A multilayered system, consisting of alternating metallic and AlN ceramic sublayers, was deposited by substrate rotation. This multisublayer system can be considered as a macrohomogeneous cermet layer with metal volume fraction determined by controlling the thicknesses of metallic and ceramic sublayers. Following this procedure, M-AlN cermet solar selective coatings with a double cermet layer structure were deposited. The films of these selective surfaces have the following structure: a low metal volume fraction cermet layer is placed on a high metal volume fraction cermet layer which in turn is placed on an aluminium metal infrared reflection layer. The top surface layer consists of an aluminium nitride antireflection layer. A solar absorptance of 0.92-0.96 and a normal emittance of 0.03-0.05 at

  10. First demonstration and performance of an injection locked continuous wave magnetron to phase control a superconducting cavity

    SciTech Connect

    A.C. Dexter, G. Burt, R.G. Carter, I. Tahir, H. Wang, K. Davis, R. Rimmer

    2011-03-01

    The applications of magnetrons to high power proton and cw electron linacs are discussed. An experiment is described where a 2.45 GHz magnetron has been used to drive a single cell superconducting cavity. With the magnetron injection locked, a modest phase control accuracy of 0.95° rms has been demonstrated. Factors limiting performance have been identified.

  11. The 'reactive

    NASA Astrophysics Data System (ADS)

    Battista Piccardo, Giovanni; Guarnieri, Luisa

    2010-05-01

    The Ligurian ophiolitic peridotites [South Lanzo, Erro-Tobbio, Internal Ligurides and Corsica] are characterized by the abundance of spinel(Sp) peridotites showing depleted compositions and ranging from Cpx-poor Sp lherzolites to Sp harzburgites. They were recognized in the last decades as refractory residua by MORB-forming partial melting of the asthenosphere, and were similar to abyssal peridotites. Recent structural and compositional studies promoted a better understanding of their structural and compositional features and their genetic processes. In the field these depleted peridotites replace with primary contacts pyroxenite-bearing fertile Sp lherzolites that have been recognized as sub-continental lithospheric mantle. Field relationships evidence that decametric-hectometric bodies of pristine pyroxenite-veined lithospheric Sp lherzolites are preserved as structural remnants within the km-scale masses of depleted peridotites. The depleted peridotites show coarse-grained recrystallized textures and reaction micro-structures indicating pyroxene dissolution and olivine precipitation that have been considered as records of melt/peridotite interaction during reactive diffuse porous flow of undersaturated melts. They show, moreover, contrasting bulk and mineral chemistries that cannot be produced by simple partial melting and melt extraction. In particular, their bulk compositions are depleted in SiO2 and enriched in FeO with respect to refractory residua after any kind of partial melting, as calculated by Niu (1997), indicating that they cannot be formed by simple partial melting and melt extraction processes. Moreover, TiO2 content in Sp is usually significantly higher (up to 0.8-1.0 wt%) than typical TiO2 contents of spinels (usually < 0.1-0.2 wt %) in fertile mantle peridotites and melting refractory residua, indicating that spinel attained element equilibration with a Ti-bearing basaltic melt. The depleted peridotites usually show strongly variable Cpx modal

  12. The behaviour of negative oxygen ions in the afterglow of a reactive HiPIMS discharge

    NASA Astrophysics Data System (ADS)

    Bowes, M.; Bradley, J. W.

    2014-07-01

    Using a single Langmuir probe, the temporal evolution of the oxygen negative ion, n-, and electron, ne, densities in the afterglow of a reactive HiPIMS discharge operating in argon-oxygen gas mixtures have been determined. The magnetron was equipped with a titanium target and operated in ‘poisoned’ mode at a frequency of 100 Hz with a pulse width of 100 µs for a range of oxygen partial pressures, {p_{O_{2}}}/{p_{total}} = 0.0{{-}}0.5 . In the initial afterglow, the density of the principle negative ion in the discharge (O-) was of the order of 1016 m-3 for all conditions. The O- concentration was found to decay slowly with characteristic decay times between 585 µs and 1.2 ms over the oxygen partial pressure range. Electron densities were observed to fall more rapidly, resulting in long-lived highly electronegative afterglow plasmas where the ratio, α = n-/ne, was found to reach values up to 672 (±100) for the highest O2 partial pressure. By comparing results to a simple plasma-chemical model, we speculate that with increased {p_{O_{2}}}/{p_{total}} ratio, more O- ions are formed in the afterglow via dissociative electron attachment to highly excited metastable oxygen molecules, with the latter being formed during the active phase of the discharge. After approximately 2.5 ms into the off-time, the afterglow degenerates into an ion-ion plasma and negative ions are free to impinge upon the chamber walls and grounded substrates with flux densities of the order of 1018 m-2 s-1, which is around 10% of the positive ion flux measured during the on-time. This illustrates the potential importance of the long afterglow in reactive HiPIMS, which can act as a steady source of low energy O- ions to a growing thin film at the substrate during periods of reduced positive ion bombardment.

  13. Closed field unbalanced magnetron sputtering ion plating of Ni/Al thin films: influence of the magnetron power.

    PubMed

    Said, R; Ahmed, W; Gracio, J

    2010-04-01

    In this study NiAl thin films have been deposited using closed field unbalanced magnetron sputtering Ion plating (CFUBMSIP). The influence of magnetron power has been investigated using dense and humongous NiAl compound targets onto stainless steel and glass substrates. Potential applications include tribological, electronic media and bond coatings in thermal barrier coatings system. Several techniques has been used to characterise the films including surface stylus profilometry, energy dispersive spectroscopy (EDAX), X-Ray diffraction (XRD) Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) and Atomic force microscopy (AFM). Scratch tester (CSM) combined with acoustic emission singles during loading in order to compare the coating adhesion. The acoustic emission signals emitted during the indentation process were used to determine the critical load, under which the film begins to crack and/or break off the substrate. The average thickness of the films was approximately 1 um. EDAX results of NiAl thin films coating with various magnetron power exhibited the near equal atomic% Ni:Al. The best result being obtained using 300 W and 400 W DC power for Ni and Al targets respectively. XRD revealed the presence of beta NiAl phase for all the films coatings. AFM analysis of the films deposited on glass substrates exhibited quite a smooth surface with surface roughness values in the nanometre range. CSM results indicate that best adhesion was achieved at 300 W for Ni, and 400 W for Al targets compared to sample other power values. SIMS depth profile showed a uniform distribution of the Ni and Al component from the surface of the film to the interface. PMID:20355462

  14. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2012-04-15

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for a pulse length of 100 {mu}s at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were recorded with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target's racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic presheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons'ExB drift velocity, which is about 10{sup 5} m/s and shows structures in space and time.

  15. Asymmetric particle fluxes from drifting ionization zones in sputtering magnetrons

    NASA Astrophysics Data System (ADS)

    Panjan, Matjaž; Franz, Robert; Anders, André

    2014-04-01

    Electron and ion fluxes from direct current and high-power impulse magnetron sputtering (dcMS and HiPIMS) plasmas were measured in the plane of the target surface. Biased collector probes and a particle energy and mass analyzer showed asymmetric emission of electrons and of singly and doubly charged ions. For both HiPIMS and dcMS discharges, higher fluxes of all types of particles were observed in the direction of the electrons' E × B drift. These results are put in the context with ionization zones that drift over the magnetron's racetrack. The measured currents of time-resolving collector probes suggest that a large fraction of the ion flux originates from drifting ionization zones, while energy-resolving mass spectrometry indicates that a large fraction of the ion energy is due to acceleration by an electric field. This supports the recently proposed hypothesis that each ionization zone is associated with a negative-positive-negative space charge structure, thereby producing an electric field that accelerates ions from the location where they were formed.

  16. Electrical characterization of an rf planar magnetron in inert gases

    NASA Astrophysics Data System (ADS)

    Minea, T. M.; Bretagne, J.; Pagnon, D.; Touzeau, M.

    2000-08-01

    Electrical aspects of an rf planar magnetron discharge in noble gases at pressures below 50 mTorr are discussed. The electrical parameters of the experimental device are measured by a diagnostic system consisting of two probes, a capacitive voltage divider and a current loop. The measurements of the rf current and voltage and the fast Fourier transform treatment of recorded signals are used to verify the validity of the `subtraction' method in order to estimate the power deposited into the plasma. This technique shows a better power coupling with a metallic target, up to 90% of the rf delivered power, than for an insulating target for which the power efficiency hardly reaches 50%. In addition, the elementary mechanisms sustaining the rf planar magnetron discharge are analysed. A transition from a combination of α (`wave-riding') and γ (secondary electron emission) regimes above a critical pressure to an α dominant regime at very low pressure is pointed out. This phenomenon is explained by the results of a particle-in-cell Monte Carlo collision simulation.

  17. Double circular erosion patterns on dielectric target in magnetron sputtering.

    PubMed

    Suzaki, Yoshifumi; Miyagawa, Hayato; Ejima, Seiki

    2009-10-01

    In rf magnetron sputtering, a circular erosion pattern forms on the surface of a circular metal conductor target with permanent magnets on its back. In this case, the theory behind the erosion pattern has been established. However, in the case of a dielectric target, a double circular erosion pattern is formed. So far, this pattern has been phenomenologically recognized by experimenters; however, it has not yet been investigated. In this study, we performed a magnetron sputtering experiment with a SiO2 dielectric target, and confirmed the formation of a double circular erosion pattern. The dimensions of the double circular erosion pattern varied depending on the insulation resistance or the thickness of the SiO2 target. Furthermore, we found that the dimensions of a double circular erosion pattern changed by making a gap between the SiO2 target and guard ring. Based on the experimental results, we have proposed a qualitative model to explain the formation mechanism of double circular erosion patterns. PMID:19895082

  18. Unbalance magnetron plasma source for ion mass-separator

    NASA Astrophysics Data System (ADS)

    Paperny, V. L.; Krasov, V. I.; Astrakchantsev, N. V.; Lebedev, N. V.

    2014-11-01

    The report presents the results of the preliminary studies characteristics of an unbalanced magnetron plasma source supplied with the transport system based on a curved magnetic field. The aim of these studies was to recognize if the system is suitable, in principle, for mass-separation of a multi-component plasma flow. The magnetron source has 50 mm diameter cathode manufactured of an alloy composed of Cu (64%), Pb (22.5%) and admixtures, about of 14% (Al, Zn, C). By means of an immersion time-of-flight spectrometer, a spatial distribution of ions of the cathode material was measured through the system output cross-section. Distribution of atom of these elements was measured here by the X-ray fluorescence spectrometry as well. Both methods showed that the ions of the lighter element (Cu) were concentrated in the inner part of the plasma flow deflected by the magnetic field while the distribution of the heavy element (Pb) was shifted toward the outer area of the flow. The similar effect was observed for each couple of the elements. Such a system is promising for use in plasma technology of reprocessing spent nuclear fuel, namely for separation heavy radioactive fission product from nuclear waste.

  19. Plasma potential mapping of high power impulse magnetron sputtering discharges

    SciTech Connect

    Rauch, Albert; Mendelsberg, Rueben J.; Sanders, Jason M.; Anders, Andre

    2011-12-20

    Pulsed emissive probe techniques have been used to determine the plasma potential distribution of high power impulse magnetron sputtering (HiPIMS) discharges. An unbalanced magnetron with a niobium target in argon was investigated for pulse length of 100 μs at a pulse repetition rate of 100 Hz, giving a peak current of 170 A. The probe data were taken with a time resolution of 20 ns and a spatial resolution of 1 mm. It is shown that the local plasma potential varies greatly in space and time. The lowest potential was found over the target’s racetrack, gradually reaching anode potential (ground) several centimeters away from the target. The magnetic pre-sheath exhibits a funnel-shaped plasma potential resulting in an electric field which accelerates ions toward the racetrack. In certain regions and times, the potential exhibits weak local maxima which allow for ion acceleration to the substrate. Knowledge of the local E and static B fields lets us derive the electrons’ E×B drift velocity, which is about 105 m/s and shows structures in space and time.

  20. An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources.

    PubMed

    Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Silze, A

    2014-05-01

    An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10(10) cm(-3) to 1 × 10(11) cm(-3), when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10(18) atoms/s for aluminum, which meets the demand for the production of a milliampere Al(+) ion beam. PMID:24880358