Science.gov

Sample records for ga co-doping effect

  1. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    NASA Astrophysics Data System (ADS)

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-01

    Ab initio calculations on Eu doped (GaN)n (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μB (7μB). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  2. Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

    SciTech Connect

    Kaur, Prabhsharan; Sekhon, S. S.; Zavada, J. M.; Kumar, Vijay

    2015-06-14

    Ab initio calculations on Eu doped (GaN){sub n} (n = 12, 13, and 32) nanoparticles show that Eu doping in nanoparticles is favorable compared with bulk GaN as a large fraction of atoms lie on the surface where strain can be released compared with bulk where often Eu doping is associated with a N vacancy. Co-doping of Si further facilitates Eu doping as strain from an oversized Eu atom and an undersized Si atom is compensated. These results along with low symmetry sites in nanoparticles make them attractive for developing strongly luminescent nanomaterials. The atomic and electronic structures are discussed using generalized gradient approximation (GGA) for the exchange-correlation energy as well as GGA + U formalism. In all cases of Eu (Eu + Si) doping, the magnetic moments are localized on the Eu site with a large value of 6μ{sub B} (7μ{sub B}). Our results suggest that co-doping can be a very useful way to achieve rare-earth doping in different hosts for optoelectronic materials.

  3. Effect of Mg2+ ions co-doping on timing performance and radiation tolerance of Cerium doped Gd3Al2Ga3O12 crystals

    NASA Astrophysics Data System (ADS)

    Lucchini, M. T.; Babin, V.; Bohacek, P.; Gundacker, S.; Kamada, K.; Nikl, M.; Petrosyan, A.; Yoshikawa, A.; Auffray, E.

    2016-04-01

    Inorganic scintillators with high density and high light yield are of major interest for applications in medical imaging and high energy physics detectors. In this work, the optical and scintillation properties of Mg co-doped Ce:Gd3Al2Ga3O12 crystals, grown using Czochralski technique, have been investigated and compared with Ce:Gd3Al2Ga3O12 ones prepared with identical technology. Improvements in the timing performance of the Mg co-doped samples with respect to Ce:Gd3Al2Ga3O12 ones have been measured, namely a substantial shortening of the rise time and scintillation decay components and lower afterglow were achieved. In particular, a significantly better coincidence time resolution of 233 ps FWHM, being a fundamental parameter for TOF-PET devices, has been observed in Mg co-doped crystals. The samples have also shown a good radiation tolerance under high doses of γ-rays, making them suitable candidates for applications in harsh radiation environments, such as detectors at future collider experiments.

  4. Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

    PubMed

    Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

    2015-11-18

    Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials. PMID:26512874

  5. Ceria co-doping: synergistic or average effect?

    PubMed

    Burbano, Mario; Nadin, Sian; Marrocchelli, Dario; Salanne, Mathieu; Watson, Graeme W

    2014-05-14

    Ceria (CeO2) co-doping has been suggested as a means to achieve ionic conductivities that are significantly higher than those in singly doped systems. Rekindled interest in this topic over the last decade has given rise to claims of much improved performance. The present study makes use of computer simulations to investigate the bulk ionic conductivity of rare earth (RE) doped ceria, where RE = Sc, Gd, Sm, Nd and La. The results from the singly doped systems are compared to those from ceria co-doped with Nd/Sm and Sc/La. The pattern that emerges from the conductivity data is consistent with the dominance of local lattice strains from individual defects, rather than the synergistic co-doping effect reported recently, and as a result, no enhancement in the conductivity of co-doped samples is observed. PMID:24658460

  6. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    NASA Astrophysics Data System (ADS)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2016-05-01

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10-3 Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  7. Control of selforganized magnetic nanocrystals aggregation in (Ga,Fe)N by co-doping with shallow donors and acceptors

    NASA Astrophysics Data System (ADS)

    Bonanni, A.; Navarro-Quezada, A.; Li, T.; Kiecana, M.; Sawicki, M.; Dietl, T.

    2008-03-01

    A number of possible room temperature functionalities has recently been proposed for magnetically doped semiconductors, in which spinodal decomposition leads to the self-organized formation of coherent ferromagnetic nanodots or nanocolumns [1]. It has also been suggested that the decomposition can be controlled in a wide range by growth conditions and co-doping [2]. We have extended our previous structural and magnetic studies of (Ga,Fe)N [3] by examining the effects of Si and Mg co-doping. As before, we have found the magnetic response to consist of a paramagnetic signal from substitutional Fe and of a ferromagnetic component due to Fe1-xN nanocrystals. Our results demonstrate that the co-doping reduces the fractional concentration of Fe contributing to the nanocrystals. This shows that tuning of the Fermi energy by changing the charge state of the transition metal ions affects their aggregation, as proposed recently [2].1. H.Katayama-Yosida et al., phys.stat. sol. (a) 204, 15 (2007); T.Dietl, arXiv:0711.0343. 2. S.Kuroda et al., Nature Mat. 6, 440 (2007). 3. A.Bonanni et al., Phys. Rev. B 75, 125210 (2007).

  8. Isoelectronic co-doping

    DOEpatents

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  9. Co-doping effects of Gd and Ag on YBCO films derived by metalorganic deposition

    NASA Astrophysics Data System (ADS)

    Sun, Meijuan; Liu, Zhiyong; Bai, Chuanyi; Guo, Yanqun; Lu, Yuming; Fan, Feng; Cai, Chuanbing

    2015-12-01

    Y1-xGdxBa2Cu3O7-δ-Ag (x = 0, 0.25, 0.5, 0.75, 1) thin films were prepared on oxide buffered Hastelloy substrates by low fluorine metalorganic depostion (MOD) process. The effects of co-doping of Ag and Gd on the microstructures and superconducting properties of YBCO thin films are investigated with respect to improvement on texture and superconducting performance in case of optimized doping content. It is found that optimum addition of Ag and Gd may lead to better c-axis orientation, superior surface microstructure and finally give rise to much improvement of superconducting performance.

  10. The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

    NASA Astrophysics Data System (ADS)

    Zhai, Zhangyin; Yu, Hualing; Zuo, Fen; Guo, Chunlian; Chen, Guibin; Zhang, Fengming; Wu, Xiaoshan; Gao, Ju

    2016-06-01

    The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C.

  11. Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels

    SciTech Connect

    Mitchell, B.; Dierolf, V.; Lee, D.; Lee, D.; Fujiwara, Y.

    2013-12-09

    Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional incorporation environments were discovered that show high excitation efficiency at room temperature and have been attributed to the coupling of Mg-H complexes to the majority Eu site. Electron beam irradiation, indirect and resonant (direct) laser excitation were found to modify these complexes, indicating that vibrational energy alone can trigger the migration of the H while the presence of additional charges and excess energy controls the type of reconfiguration and the activation of non-radiative decay channels.

  12. Effects of acceptor-donor complexes on electronic structure properties in co-doped TiO2: A first-principles study

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Cai, L. L.; Yuan, X. B.; Hu, G. C.; Ren, J. F.

    2016-07-01

    We theoretically investigate the doping effects induced by impurity complexes on the electronic structures of anatase TiO2 based on the density functional theory. Mono-doping and co-doping effects are discussed separately. The results show that the impurity doping can make the band-edges shift. The induced defect levels in the band gaps by impurity doping reduce the band gap predominantly. The compensated acceptor-donor pairs in the co-doped TiO2 will improve the photoelectrochemical activity. From the calculations, it is also found that (S+Zr)-co-doped TiO2 has the ideal band gap and band edge, at the same time, the binding energy is higher than other systems, so (S+Zr)-co-doping in TiO2 is more promise in photoelectrochemical experiments.

  13. Electrode effects in dielectric spectroscopy measurements on (Nb +In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, David; Yee, Susan; Savinov, Maxim; Nuzhnyy, Dimitri; Petzelt, Jan; Kamba, Stanislav; Prokes, Jan

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and ac conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four contact van der Pauw dc conductivity measurements and bulk conductivity values extracted from two contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature. Nserc, Czech Science Foundation (Project 15-08389S).

  14. Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

    SciTech Connect

    Xiong, Wen; Chen, Wensuo

    2013-12-21

    The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbands and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.

  15. Effect of Co doping on the structural and dielectric properties of ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Ram, Mast; Bala, Kanchan; Sharma, Hakikat; Negi, N. S.

    2016-05-01

    This paper reports on the synthesis of Co doped Zn1-xCoxO (x= 0.0, 0.01, 0.02, 0.03 and 0.05) nanoparticles by solution combustion method using urea as a fuel. The Structural and dielectric properties of the samples were studied. Crystallite sizes were obtained from X-ray diffraction (XRD) patterns whose values decreased with increase in Co concentration. The XRD study reveals that Co2+ ions substitute the Zn2+ ion without changing the wurtzite structure of pristine ZnO up to Co concentrations of 5%. The dielectric constants, dielectric loss (tanδ) and ac conductivity (σac) were studied as the function of frequency and composition, which have been explained by Maxwell-Wagner type interfacial polarization and discussed Koops phenomenological theory.

  16. Effects of Co doping on electronic structure and electric/magnetic properties of La0.1Bi0.9FeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Wang, ShouYu; Feng, Yu; Liu, WeiFang; Yu, DaShu; Li, DeJun

    2013-10-01

    In this work, we report the influence of Co-doping on the electronic band structure, dielectric and magnetic properties of La0.1Bi0.9Fe1- x Co x O3 ceramics. X-ray photoelectron spectroscopy investigation shows that Co dopant can shift the valence band spectrum and core-level lines of constituent elements towards higher bind energy regions simultaneously increase the concentration of oxygen vacancies in ceramics. The effects of dopant are discussed with focus given to the Co-doping induced enhancement of electrical conductivity and resistive switching phenomena.

  17. Effect of Co Doping on the Structural, Optical and Magnetic Properties of ZnO Nanoparticles

    SciTech Connect

    Hays, Jason; Reddy, K. M.; Graces, N. Y.; Engelhard, Mark H.; Shutthanandan, V.; Luo, M.; Xu, Changqing; Giles, N. C.; Wang, Chong M.; Thevuthasan, Suntharampillai; Punnoose, Alex

    2007-07-04

    We report the results of a detailed investigation of sol-gel synthesized nanoscale Zn1-xCoxO powders processed at 350 °C with 0 @ x @ 0.12 to understand how the structural, morphological, optical and magnetic properties of ZnO are modified by Co doping, in addition to searching for the theoretically predicated ferromagnetism. With x increasing to 0.03, both lattice parameters a and c of the hexagonal ZnO decreased suggesting substitutional doping of Co at the tetrahedral Zn2+ sites. For x > 0.03, these trends reversed and the lattice showed a gradual expansion as x approached 0.12, probably due to additional interstitial incorporation of Co. Raman spectroscopy measurements showed a rapid change in the ZnO peak positions for x > 0.03 suggesting significant disorder and changes in the ZnO structure, in support of additional interstitial Co doping possibility. Combined x-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance spectroscopy, photoluminescence spectroscopy and diffuse reflectance spectroscopy showed clear evidence for tetrahedrally coordinated high spin Co2+ ions occupying the lattice sites of ZnO host system, which became saturated for x > 0.03. Magnetic measurements showed a paramagnetic behavior in Zn1-xCoxO with increasing antiferromagnetic interactions as x increased to 0.10. Surprisingly, a weak ferromagnetic behavior was observed for the sample with x = 0.12 with a characteristic hysteresis loop showing a coercivity Hc ~ 350 Oe, 25% remanence Mr, a low saturation magnetization Ms ~ 0.04 emu/g and with a Curie temperature Tc ~ 540 K. The XPS data collected from Zn1-xCoxO samples showed a gradual increase in the oxygen concentration, changing the oxygen deficient undoped ZnO to an excess oxygen state for x = 0.12. This indicates that such high Co concentrations and appropriate oxygen stoichiometry may be needed to achieve adequate ferromagnetic exchange coupling between the incorporated Co2+ ions.

  18. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator

    NASA Astrophysics Data System (ADS)

    Singh, Rahul; Shukla, K. K.; Kumar, A.; Okram, G. S.; Singh, D.; Ganeshan, V.; Lakhani, Archana; Ghosh, A. K.; Chatterjee, Sandip

    2016-09-01

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases.

  19. Large power factor and anomalous Hall effect and their correlation with observed linear magneto resistance in Co-doped Bi2Se3 3D topological insulator.

    PubMed

    Singh, Rahul; Shukla, K K; Kumar, A; Okram, G S; Singh, D; Ganeshan, V; Lakhani, Archana; Ghosh, A K; Chatterjee, Sandip

    2016-09-21

    Magnetoresistance (MR), thermo power, magnetization and Hall effect measurements have been performed on Co-doped Bi2Se3 topological insulators. The undoped sample shows that the maximum MR as a destructive interference due to a π-Berry phase leads to a decrease of MR. As the Co is doped, the linearity in MR is increased. The observed MR of Bi2Se3 can be explained with the classical model. The low temperature MR behavior of Co doped samples cannot be explained with the same model, but can be explained with the quantum linear MR model. Magnetization behavior indicates the establishment of ferromagnetic ordering with Co doping. Hall effect data also supports the establishment of ferromagnetic ordering in Co-doped Bi2Se3 samples by showing the anomalous Hall effect. Furthermore, when spectral weight suppression is insignificant, Bi2Se3 behaves as a dilute magnetic semiconductor. Moreover, the maximum power factor is observed when time reversal symmetry (TRS) is maintained. As the TRS is broken the power factor value is decreased, which indicates that with the rise of Dirac cone above the Fermi level the anomalous Hall effect and linearity in MR increase and the power factor decreases. PMID:27419361

  20. The combined effect of alumina and silica co-doping on the ageing resistance of 3Y-TZP bioceramics.

    PubMed

    Samodurova, Anastasia; Kocjan, Andraž; Swain, Michael V; Kosmač, Tomaž

    2015-01-01

    The combined effect of alumina and silica co-doping on the ageing resistance of 3Y-TZP bioceramics was investigated. In order to differentiate between the distinct contributions of two dopants to the overall resistance to low-temperature degradation (LTD), specimens were prepared by infiltration of silica sol into pre-sintered 3Y-TZP pellets, produced from commercially available powders, which were alumina-free or contained 0.05 and 0.25 wt.%. After sintering, specimens were exposed to accelerated ageing in distilled water at 134°C for 6-48 h. X-ray diffraction was applied to quantify the tetragonal-to-monoclinic (t-m) phase transformation associated with the LTD, while a focused ion beam-scanning electron microscopy technique was employed to study the microstructural features in the transformed layer. The results showed that the minor alumina and/or silica additions did not drastically change the densities, grain sizes or mechanical properties of 3Y-TZP, but they did significantly reduce LTD. The addition of either alumina or silica has the potential to influence both the nucleation and the propagation of moisture-induced transformation, but in different ways and to different extents. The co-doped ceramics exhibited predominantly transgranular fracture, reflecting strong grain boundaries (limiting microcracking of the transformed layer), for alumina doping, and rounded grains with a glassy phase at multiple grain junctions (reducing internal stresses) for silica-doped material. These two additives evidently have different dominant mechanisms associated with the deceleration of LTD of 3Y-TZP, but their combination increases resistance to ageing, importantly, without reducing the fracture toughness of this popular biomaterial. PMID:25234155

  1. First-principles study of n-type tin/fluorine co-doped beta-gallium oxides

    NASA Astrophysics Data System (ADS)

    Yinnü, Zhao; Jinliang, Yan

    2015-08-01

    Defect formation energies, electronic structures and optical properties of Sn-doped β-Ga2O3, F-doped β-Ga2O3, and Sn/F co-doped β-Ga2O3 were calculated using the first-principles. The calculated results of the pure and Sn-doped β-Ga2O3 using the local-density approximation (LDA) method show that the lattice parameters and electronic structures are in agreement with previous data. The defect formation energies demonstrate that the doped systems are relatively easy to form under O-rich conditions. Sn-doping, F-doping and Sn/F co-doping make β-Ga2O3 become an n-type semiconductor. Sn/F co-doping β-Ga2O3 has the smallest effective electron mass and the biggest relative electron number, which is expected to possess good conductivity. Sn/F co-doping β-Ga2O3 displays an intense absorption in visible light. Project supported by the National Natural Science Foundation of China (No. 10974077), and the Innovation Project of Shandong Graduate Education, China (No. SDYY13093).

  2. Effect of WO 3 on the spectroscopic properties in Er 3+/Yb 3+ co-doped bismuth-borate glasses

    NASA Astrophysics Data System (ADS)

    Wang, Jun; Zhou, Yaxun; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua

    2007-11-01

    The spectroscopic properties of Er 3+/Yb 3+ co-doped Bi 2O 3-B 2O 3-WO 3 (BBW) glasses were analyzed and discussed. The effect of WO 3 content on the absorption spectra, the Judd-Ofelt parameters Ω t ( t=2, 4, 6), emission spectra and the lifetime of the 4I 13/2 level and the quantum efficiency of Er 3+: 4I 13/2→ 4I 15/2 transition were also investigated. With the substitution of WO 3 for B 2O 3, the measured lifetime of the 4I 13/2 level and the quantum efficiency of Er 3+: 4I 13/2→ 4I 15/2 transition increase from 0.98 to 1.31 ms and from 38.2% to 49.2%, respectively. The effective width of emission band and the emission cross-section both decrease slightly. And the emission spectra is analyzed via the different curve ( σe- σa) of BBW glasses, the influence of OH - is also discussed.

  3. The effect of K-na co-doping on the formation and particle size of Bi-2212 phase

    NASA Astrophysics Data System (ADS)

    Kır, M. Ebru; Özkurt, Berdan; Aytekin, M. Ersin

    2016-06-01

    Superconducting K-Na co-doped Bi2Sr2KxCa1Cu1.75Na0.25Oy (x=0, 0.05, 0.1 and 0.25) ceramics are prepared by a solid-state reaction method. It is clearly determined from XRD data that the characteristic peaks of Bi-2212 phase are observed in all samples. The resistivity measurements show that Tc (onset) values is gradually increasing as K content is increased. It is also found that K-Na co-doping influence the grain sizes for Bi-2212 phase significantly. The critical current densities as a function of magnetic field have been calculated from M-H hysteresis loops of samples according to Bean's critical model, indicating that K-Na co-doping cause higher Jc values than the pure ones.

  4. Effects of rare-earth co-doping on the local structure of rare-earth phosphate glasses using high and low energy X-ray diffraction.

    PubMed

    Cramer, Alisha J; Cole, Jacqueline M; FitzGerald, Vicky; Honkimaki, Veijo; Roberts, Mark A; Brennan, Tessa; Martin, Richard A; Saunders, George A; Newport, Robert J

    2013-06-14

    Rare-earth co-doping in inorganic materials has a long-held tradition of facilitating highly desirable optoelectronic properties for their application to the laser industry. This study concentrates specifically on rare-earth phosphate glasses, (R2O3)x(R'2O3)y(P2O5)(1-(x+y)), where (R, R') denotes (Ce, Er) or (La, Nd) co-doping and the total rare-earth composition corresponds to a range between metaphosphate, RP3O9, and ultraphosphate, RP5O14. Thereupon, the effects of rare-earth co-doping on the local structure are assessed at the atomic level. Pair-distribution function analysis of high-energy X-ray diffraction data (Q(max) = 28 Å(-1)) is employed to make this assessment. Results reveal a stark structural invariance to rare-earth co-doping which bears testament to the open-framework and rigid nature of these glasses. A range of desirable attributes of these glasses unfold from this finding; in particular, a structural simplicity that will enable facile molecular engineering of rare-earth phosphate glasses with 'dial-up' lasing properties. When considered together with other factors, this finding also demonstrates additional prospects for these co-doped rare-earth phosphate glasses in nuclear waste storage applications. This study also reveals, for the first time, the ability to distinguish between P-O and P[double bond, length as m-dash]O bonding in these rare-earth phosphate glasses from X-ray diffraction data in a fully quantitative manner. Complementary analysis of high-energy X-ray diffraction data on single rare-earth phosphate glasses of similar rare-earth composition to the co-doped materials is also presented in this context. In a technical sense, all high-energy X-ray diffraction data on these glasses are compared with analogous low-energy diffraction data; their salient differences reveal distinct advantages of high-energy X-ray diffraction data for the study of amorphous materials. PMID:23518599

  5. A clear effect of charge compensation through Na+ co-doping on the luminescence spectra and decay kinetics of Nd3+-doped CaAl4O7

    NASA Astrophysics Data System (ADS)

    Puchalska, M.; Watras, A.

    2016-06-01

    We present a detailed analysis of luminescence behavior of singly Nd3+ doped and Nd3+, Na+ co-doped calcium aluminates powders: Ca1-xNdxAl4O7 and Ca1-2xNdxNaxAl4O7 (x=0.001-0.1). Relatively intense Nd3+ luminescence in IR region corresponding to typical 4F3/2→4IJ (J=9/2-13/2) transitions with maximum located at about 1079 nm was obtained in all samples on direct excitation into f-f levels. The effect of dopant concentration and charge compensation by co-doping with Na+ ions on morphology and optical properties were studied. The results show that both, the Nd3+ concentration and the alkali metal co-doping affected the optical properties but had no influence on the powders morphology. The studies of luminescence spectra (298 and 77 K) in a function of dopant concentration showed an increasing distortion of the local symmetry of Nd3+with raising activator content due to certain defects created in the crystal lattice. On the other hand Na+ addition led to significant narrowing of absorption and luminescence bands and also a reduction of the number of their components, showing smaller disturbance of Nd3+ ions local symmetries. Consequently, charge compensated by Na+ co-doping materials showed significantly enhanced Nd3+ luminescence. The decrease of emission intensity and luminescence lifetimes with increase of activator concentration was attributed mainly to phonon-assisted cross-relaxation processes between Nd3+ ions. Analysis with Inokuti-Hirayama model indicated dipole-dipole mechanism of ion-ion interaction. Na+ addition led to much smaller concentration quenching due to smaller clustering of dopant ions in CaAl4O7 lattice.

  6. Effect of calcination temperature on the structure and visible-light photocatalytic activities of (N, S and C) co-doped TiO2 nano-materials

    NASA Astrophysics Data System (ADS)

    Lei, X. F.; Xue, X. X.; Yang, H.; Chen, C.; Li, X.; Niu, M. C.; Gao, X. Y.; Yang, Y. T.

    2015-03-01

    The (N, S and C) co-doped TiO2 samples (NSC-TiO2) were synthesized by the sol-gel method combining with the high energy ball milling method calcined at the different temperature (400-700 °C), employing butyl titanate as the titanium source and thiourea as the doping agent. The structures of NSC-TiO2 samples were characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectra (DRS), X-ray photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), thermogravimetry and differential thermal analysis (TG-DTA), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), scanning electron microscopy (SEM) and nitrogen adsorption-desorption isotherms. The photocatalytic activities were checked through the photocatalytic reduction of Cr(VI) as a model compound under visible light irradiation. The results showed that the (N, S and C) co-doping and the calcination temperature played important role on the microstructure and photocatalytic activity of the samples. According to XPS spectra, sulfur was mainly attributed to the Tisbnd Osbnd S bond; nitrogen was ascribed to the Tisbnd Osbnd N and Tisbnd N bonds; carbon was assigned to the Tisbnd Osbnd C bond in the NSC-TiO2 samples. (N, S and C) co-doped TiO2 samples calcinated at 500 °C exhibits higher photocatalytic activity than that of the other samples under visible light irradiation, which can be attributed to the synergic effect of its enhancing crystallization of anatase and (N, S and C) co-doping.

  7. Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

    PubMed Central

    Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

    2015-01-01

    The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I–V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I–V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I–V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I–V behavior of (Nb + In) co-doped TiO2 ceramics. PMID:25656713

  8. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  9. Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics

    NASA Astrophysics Data System (ADS)

    Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

    2015-02-01

    The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I-V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I-V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I-V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I-V behavior of (Nb + In) co-doped TiO2 ceramics.

  10. Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics.

    PubMed

    Li, Jinglei; Li, Fei; Li, Chao; Yang, Guang; Xu, Zhuo; Zhang, Shujun

    2015-01-01

    The (Nb + In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I-V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I-V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I-V behavior was observed in single grain, while GBs showed nonlinear behavior and much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or impurity segregation can be achieved at grain boundaries. The present results support that the grain boundary capacitance effect plays an important role in the CP and nonlinear I-V behavior of (Nb + In) co-doped TiO2 ceramics. PMID:25656713

  11. Electrode effects in dielectric spectroscopy measurements on (Nb+In) co-doped TiO2

    NASA Astrophysics Data System (ADS)

    Crandles, D. A.; Yee, S. M. M.; Savinov, M.; Nuzhnyy, D.; Petzelt, J.; Kamba, S.; Prokeš, J.

    2016-04-01

    Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and alternating current (ac) conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness, and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four-contact van der Pauw direct current conductivity measurements and bulk conductivity values extracted from two-contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature.

  12. Study of synergistic effect of Sc and C co-doping on the enhancement of visible light photo-catalytic activity of TiO2

    NASA Astrophysics Data System (ADS)

    Nasir, Muhammad; Lei, Juying; Iqbal, Waheed; Zhang, Jinlong

    2016-02-01

    Scandium and carbon co-doped TiO2 catalyst was prepared through a simple sol-gel synthesis method by using scandium nitrate as scandium dopant precursor, glucose as carbon precursor and tetrabutyl orthotitanate as titanium precursor and calcined them at 450 °C for 3 h. The characterizations of the prepared samples were accomplished through X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence spectroscopy (PL), Fourier transformation infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Brunauer-Emmett-Teller (BET). The X-ray diffraction results of the samples showed the decrease in the crystal size of the sample with the subsequent increase in the specific surface area as shown by Brunauer-Emmett-Teller. The UV-visible diffuse reflectance spectroscopy displayed the blue shift in the absorption together with the photoluminescence spectroscopy revealed the decrease in the recombination of electrons and holes by the addition of the scandium and then after the certain optimum value, the further increase of the scandium further increased the recombination of electrons and holes. The photo-catalytic activity of the samples was investigated with the help of photo-catalytic degradation of Acid orange 7 under visible light irradiation. The degradation of Acid orange 7 was highly increased for the Sc and C co-doped samples compared to the single C doped sample. And the sample 0.2 Sc/C-TiO2 had the maximum increase. The enhanced photo-catalytic performance was due the decrease of the crystal size, increase of the surface area, increase in the surface hydroxyl groups, and increase of the lifetime of the electrons and holes because of the synergistic effect of the Sc and C co-doping in TiO2.

  13. Effect of co-doping Tm{sup 3+} ions on the emission properties of Dy{sup 3+} ions in tellurite glasses

    SciTech Connect

    Sasikala, T.; Rama Moorthy, L.; Mohan Babu, A.; Srinivasa Rao, T.

    2013-07-15

    The present work reports the absorption, photoluminescence and decay properties of singly doped Dy{sup 3+} and co-doped Dy{sup 3+}/Tm{sup 3+} ions in TeO{sub 2}+ZnO+K{sub 2}O+CaO (TZKC) glasses prepared by the melt quenching technique. The glassy nature of the host glass has been confirmed by X-ray diffraction analysis and the primary vibrational modes were determined from the Raman spectrum. Judd–Ofelt (JO) analysis has been used to calculate the radiative transition rates, branching ratios and radiative lifetime of the emitting {sup 4}F{sub 9/2} state. The effect of co-doping of different concentrations of Tm{sup 3+} ions on the emission properties of Dy{sup 3+} ions has been investigated. The decay profiles of the {sup 4}F{sub 9/2} level were fitted to double exponential as well as Inokuti–Hirayama (IH) model to determine the energy transfer rates between Dy{sup 3+} and Tm{sup 3+} ions. The energy transfer rates found to increase with the increase of Tm{sup 3+} ions concentration. The chromaticity coordinates and color purity of the emitted light for all glasses were determined. - Graphical abstract: The graphical abstract shows the emission spectra of Dy{sup 3+}, Tm{sup 3+} and Dy{sup 3+}/Tm{sup 3+} co-doped TZKC glasses recorded by exciting at 355 nm wavelength. - Highlights: • Zinc tellurite glasses doped with Dy{sup 3+}, Tm{sup 3+} and Dy{sup 3+}/Tm{sup 3+} ions were prepared. • XRD, DTA and Raman spectral measurements were recorded to know the nature of host. • Energy transfer occurs from Dy{sup 3+} ions to Tm{sup 3+} ions. • The color purity of the emitted light was determined.

  14. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

    SciTech Connect

    Simon, Roland B.; Anaya, Julian; Kuball, Martin

    2014-11-17

    The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates.

  15. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    NASA Astrophysics Data System (ADS)

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-07-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres.

  16. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres.

    PubMed

    Sporea, D; Mihai, L; Neguţ, D; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  17. γ irradiation induced effects on bismuth active centres and related photoluminescence properties of Bi/Er co-doped optical fibres

    PubMed Central

    Sporea, D.; Mihai, L.; Neguţ, D.; Luo, Yanhua; Yan, Binbin; Ding, Mingjie; Wei, Shuen; Peng, Gang-Ding

    2016-01-01

    We investigate the effects of γ irradiation on bismuth active centres (BACs) and related photoluminescence properties of bismuth/erbium co-doped silica fibre (BEDF), [Si] ~28, [Ge] ~1.60, [Al] ~0.10, [Er] ~ <0.10 and [Bi] ~0.10 atom%, fabricated by in-situ solution doping and Modified Chemical Vapor Deposition (MCVD). The samples were irradiated at 1 kGy, 5 kGy, 15 kGy, 30 kGy and 50 kGy doses, and dose rate of 5.5 kGy/h, at room temperature. The optical properties of BEDF samples are tested before and after γ irradiation. We found that high dose γ irradiation could significantly influence the formation and composition of BACs and their photoluminescence performance, as important changes in absorption and emission properties associated with the 830 nm pump produces the direct evidence of γ irradiation effects on BAC-Si. We notice that the saturable to unsaturable absorption ratio at pump wavelength could be increased with high dose γ irradiation, indicating that emission and pump efficiency could be increased by γ irradiation. Our experimental results also reveal good radiation survivability of the BEDF under low and moderate γ irradiation. Our investigation suggests the existence of irradiation related processing available for tailoring the photoluminescence properties and performance of bismuth doped/co-doped fibres. PMID:27440386

  18. Pump saturation effect of the Er3+/Yb3+ co-doped Y2Ti2O7 phosphors containing nanocrystals

    NASA Astrophysics Data System (ADS)

    Song, Feng; Wang, Fengxiao; Zhang, Jun; Chen, Gui-Yang; Feng, Ming

    2014-03-01

    Er3+ and Yb3+ co-doped Y2Ti2O7 phosphors containing nanocrystals were prepared by sol-gel method and annealed at 800 °C for 1 h in air. The X-ray diffraction (XRD) and transmission electron microscope (TEM) images showed that the mean size of nano-crystals is about 40-50nm, which corresponds well with the calculated results by Scherrer equation. Photoluminescence spectra and its upconversion properties were investigated. The anomalous slopes of the fitted line in the log-log plots for upconversion emissions and the pump-saturation effect of near infrared (NIR) emission were observed in the nanocrystalline samples. The reasons for the highly efficient upconversion luminescence and pump-saturation effect of NIR emission were discussed by a theoretical model of practical Er3+/Yb3+ co-doped system based on the rate equations. This work is supported by International Cooperation Program sponsored by Ministry of Science and Technology (MOST) of People's Republic of China.

  19. Effect of thermal treatment on room-temperature ferromagnetism in Co-doped ZnO powders

    NASA Astrophysics Data System (ADS)

    Zhou, Xueyun; Ge, Shihui; Yao, Dongsheng; Zuo, Yalu; Xiao, Yuhua

    2008-09-01

    The Co-doped ZnO powders were synthesized by sol-gel method, and treated at different temperatures (673-873 K) in the presence or absence of NH 3 atmosphere for 0.5 and 2 h, respectively. X-ray diffraction (XRD) and vibrating sample magnetometer (VSM) show that better crystal structure can cause larger ferromagnetism and the second phase (Co 3O 4) is the reason for saturation magnetization decrease of the sample sintered at higher temperature in air. XPS and nuclear magnetic resonance (NMR) prove the existence of Co 2+ ions in the Zn 0.9Co 0.1O and the absence of Co clusters, indicating intrinsic ferromagnetism of the samples treated in air. However, strong ferromagnetism of the samples annealed in NH 3 is ascribed to cobalt nitride formed during annealing.

  20. Effect of Er3+ and Yb3+ co-doping on the performance of a ZnO-based DSSC

    NASA Astrophysics Data System (ADS)

    Tsege, Ermias Libnedengel; Vu, Hong Ha Thi; Atabaev, Timur Sh.; Kim, Hyung-Kook; Hwang, Yoon-Hwae

    2016-06-01

    Zinc-oxide (ZnO) nanoparticles (NPs) co-doped with different concentrations of rare-earth ions of erbium and ytterbium, (ZnO: Er3+, Yb3+) were synthesized for applications to ZnO-based dye sensitized solar cells (DSSC). The composite NPs used for the photoelectrode (PE) were synthesized using a simple co-precipitation technique. X-ray diffraction and scanning electron microscopy measurements on the prepared samples revealed a single phase wurzite ZnO powder with approximate sizes in the range from 15 to 20 nm. Photoluminescence (PL) measurements confirmed that the synthesized composite NPs had a good up-conversion (UPC) property. The prepared powders were directly used to make PEs for DSSCs. The photovoltaic efficiency of the DSSCs was enhanced compared to that of pure ZnO-based DSSCs. Particularly, the PE made up of ZnO: Er3+, Yb3+ NPs with 4 wt% of Er3+ and Yb3+ generates a short-circuit current density ( J sc ) of 4.794 mA·cm -2 and an open circuit voltage ( V oc ) of 0.602 V with an efficiency ( η) of 1.58%. The result indicates a 48.4% J sc improvement compared to a pure ZnO PE-based DSSC. The photocurrent improvement is due to an increase in the light-harvesting capacity of the PEs attained through the UPC property of ZnO: Er3+, Yb3+ NPs. As confirmed by PL and electrochemical impedance spectra (EIS), the use of ZnO: Er3+,Yb3+ NPs as PEs for DSSCs enhances charge concentration and transport as a result of n-type doping. However, all ZnO: Er3+, Yb3+ NP based PEs exhibited a lower V oc as a result of a down shift in the Fermi energy, which affects the overall efficiency of the cell.

  1. Effect of Co doping on structural, optical, magnetic and dielectric properties of Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Mohapatra, S. R.; Sahu, B.; Singh, A. K.; Kaushik, S. D.

    2015-06-24

    Polycrystalline Bi{sub 2}Fe{sub 4}O{sub 9} and 2% Co doped Bi{sub 2}Fe{sub 4}O{sub 9} were prepared by solid state reaction route. X-ray diffraction (XRD) result reveals that there is no change in the crystal structure due to Co doping and the compound has orthorhombic structure. UV-visible spectroscopy confirms the decrease in band gap due Co doping. Zero field cooled magnetization measurement at 100 Oe magnetic field shows substantial decrease in the magnetic transition temperature. Room temperature frequency dependent dielectric permittivity at 1V DC bias shows ∼10% increase in Co doped sample with respect to pure Bi{sub 2}Fe{sub 4}O{sub 9}.

  2. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Fang-Hsing; Chang, Chiao-Lu

    2016-05-01

    ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al2O3 and 1.5 wt% ZnF2 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV-vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10-4 to 2.88 × 10-4 Ω-cm as the substrate temperature increased from RT to 200 °C due to the increased carrier concentration and Hall mobility. The optical transmittances of all the AFZO thin films were over 92% in the wavelength range of 400-800 nm regardless of substrate temperature. The blue-shift of absorption edge accompanied the rise of the optical band gap, which conformed to the Burstein-Moss effect. The developed AFZO thin films are suitable as transparent conducting electrodes for various optoelectronic

  3. Effects of Ho3+ and Yb3+ doping concentrations and Li+ co-doping on the luminescence of GdVO4 powders

    NASA Astrophysics Data System (ADS)

    Gavrilović, Tamara V.; Jovanović, Dragana J.; Trandafilović, Lidija V.; Dramićanin, Miroslav D.

    2015-07-01

    We present the structural and luminescent properties of Ho3+/Yb3+-doped GdVO4 and Li+-co-doped GdVO4:Ho3+/Yb3+ powder phosphors. The materials were prepared by high-temperature solid state method with different concentrations (between 0.5 and 2 mol%) of dopant Ho3+ emitting ions and different concentrations (between 5 and 20 mol%) of sensitizer Yb3+ ions. The dopant ions provided the material with intense luminescence emission; green emissions (centered at 542 nm from 5F4,5S2 → 5I8 electronic transition of Ho3+ ions) resulted upon ultraviolet excitation, and red (centered at 659 nm from 5F5 → 5I8 electronic transition of Ho3+ ions) upon near-infrared excitation. The co-doped materials were obtained under identical experimental conditions by adding Li+ ions (5, 7.5, 10, and 15 mol%). The powders co-doped with 7.5 mol% Li+ ions showed a downconversion emission intensity more than twice as high as the samples without Li+ co-doping. In upconversion, an equal intensification of emission was achieved with co-doping with 10 mol% Li+. The influences of Ho3+/Yb3+ concentration ratio and Li+ co-doping level on emission color and emission branching was investigated and analyzed for both downconversion and upconversion emission. Increasing Yb3+ concentration was found to increase the share of dominant emission (green) in downconversion, but decreased the share of dominant emission (red) in upconversion.

  4. Infrared to visible upconversion in Ho³+/Yb³+ co-doped Y₂ O₃ phosphor: effect of laser input power and external temperature.

    PubMed

    Rai, Monika; Mishra, K; Singh, S K; Verma, R K; Rai, S B

    2012-11-01

    In the present paper, Ho(3+) doped and Ho(3+)/Yb(3+) co-doped Y(2)O(3) phosphors have been synthesized using solution combustion technique and characterized for its structure and upconversion (UC) fluorescence as a function of Yb(3+) concentration. Effect of a variation in laser input power and external temperature on the UC emission intensity has been studied to explore the UC mechanism and temperature dependent behavior of the phosphor, respectively. On excitation with near infrared (NIR) light (976 nm), the phosphor emits strong green emission along with relatively weak emission bands in red and blue regions at 553, 670 and 497 nm due to (5)S(2)→(5)I(8), (5)F(5)→(5)I(8) and (5)F(3)→(5)I(8), respectively. The emission shows a decrease in intensity with an increase in external temperature, however contrary to the normal behavior of Ho(3+), no significant change in the FIR (fluorescence intensity ratio) of (5)F(4)→(5)I(8) and (5)S(2)→(5)I(8) transitions is noted in the present host. This peculiar behavior of the sample with external temperature has been explained by temperature dependent lifetime study of the thermally coupled levels. PMID:22902580

  5. Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be2+ as co-dopant

    PubMed Central

    Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-jeong; Jang, Jum Suk

    2016-01-01

    For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn4+ and Be2+ dopants into hematite (α–Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm2) compared to pristine α–Fe2O3 (0.7 mA/cm2), and Sn4+ mono-doped α-Fe2O3 photoanodes (1.0 mA/cm2). From first-principles calculations, we found that Sn4+ doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn4+-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be2+ was co-doped with Sn4+-doped α–Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure. PMID:27005757

  6. Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be(2+) as co-dopant.

    PubMed

    Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-Jeong; Jang, Jum Suk

    2016-01-01

    For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn(4+) and Be(2+) dopants into hematite (α-Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm(2)) compared to pristine α-Fe2O3 (0.7 mA/cm(2)), and Sn(4+) mono-doped α-Fe2O3 photoanodes (1.0 mA/cm(2)). From first-principles calculations, we found that Sn(4+) doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn(4+)-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be(2+) was co-doped with Sn(4+)-doped α-Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure. PMID:27005757

  7. Sn/Be Sequentially co-doped Hematite Photoanodes for Enhanced Photoelectrochemical Water Oxidation: Effect of Be2+ as co-dopant

    NASA Astrophysics Data System (ADS)

    Annamalai, Alagappan; Lee, Hyun Hwi; Choi, Sun Hee; Lee, Su Yong; Gracia-Espino, Eduardo; Subramanian, Arunprabaharan; Park, Jaedeuk; Kong, Ki-Jeong; Jang, Jum Suk

    2016-03-01

    For ex-situ co-doping methods, sintering at high temperatures enables rapid diffusion of Sn4+ and Be2+ dopants into hematite (α–Fe2O3) lattices, without altering the nanorod morphology or damaging their crystallinity. Sn/Be co-doping results in a remarkable enhancement in photocurrent (1.7 mA/cm2) compared to pristine α–Fe2O3 (0.7 mA/cm2), and Sn4+ mono-doped α-Fe2O3 photoanodes (1.0 mA/cm2). From first-principles calculations, we found that Sn4+ doping induced a shallow donor level below the conduction band minimum, which does not contribute to increase electrical conductivity and photocurrent because of its localized nature. Additionally, Sn4+-doping induce local micro-strain and a decreased Fe-O bond ordering. When Be2+ was co-doped with Sn4+-doped α–Fe2O3 photoanodes, the conduction band recovered its original state, without localized impurities peaks, also a reduction in micro-strain and increased Fe-O bond ordering is observed. Also the sequence in which the ex-situ co-doping is carried out is very crucial, as Be/Sn co-doping sequence induces many under-coordinated O atoms resulting in a higher micro-strain and lower charge separation efficiency resulting undesired electron recombination. Here, we perform a detailed systematic characterization using XRD, FESEM, XPS and comprehensive electrochemical and photoelectrochemical studies, along with sophisticated synchrotron diffraction studies and extended X-ray absorption fine structure.

  8. Samarium and Nitrogen Co-Doped Bi2 WO6 Photocatalysts: Synergistic Effect of Sm(3+) /Sm(2+) Redox Centers and N-Doped Level for Enhancing Visible-Light Photocatalytic Activity.

    PubMed

    Wang, Fangzhi; Li, Wenjun; Gu, Shaonan; Li, Hongda; Wu, Xue; Liu, Xintong

    2016-08-26

    Samarium and nitrogen co-doped Bi2 WO6 nanosheets were successfully synthesized by using a hydrothermal method. The crystal structures, morphology, elemental compositions, and optical properties of the prepared samples were investigated. The incorporation of samarium and nitrogen ions into Bi2 WO6 was proved by X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. UV/Vis diffuse reflectance spectroscopy indicated that the samarium and nitrogen co-doped Bi2 WO6 possessed strong visible-light absorption. Remarkably, the samarium and nitrogen co-doped Bi2 WO6 exhibited higher photocatalytic activity than single-doped and pure Bi2 WO6 under visible-light irradiation. Radical trapping experiments indicated that holes (h(+) ) and superoxide radicals ((.) O2 (-) ) were the main active species. The results of photoluminescence spectroscopy and photocurrent measurements demonstrated that the recombination rate of the photogenerated electrons and holes pairs was greatly depressed. The enhanced activity was attributed to the synergistic effect of the in-built Sm(3+) /Sm(2+) redox pair centers and the N-doped level. The mechanism of the excellent photocatalytic activity of Sm-N-Bi2 WO6 is also discussed. PMID:27464522

  9. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    SciTech Connect

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  10. The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1988-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  11. The effect of sulfur and zirconium Co-doping on the oxidation of NiCrAl

    NASA Technical Reports Server (NTRS)

    Smialek, James L.

    1987-01-01

    The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys, the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S sup 0.2 (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggests that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

  12. Effect of co-doped SnO{sub 2} nanoparticles on photoluminescence of cu-doped potassium lithium borate glass

    SciTech Connect

    Namma, Haydar Aboud; Wagiran, H.; Hussin, R.; Ariwahjoedi, B.

    2012-09-26

    The SnO{sub 2} co-doped lithium potassium borate glasses doped with 0.05, 0.10, 0.25 and 0.50 mol% of Cu were synthesized by the melt quenching technique. The SnO{sub 2} co-dope was added to the compounds in the amounts of 0.05, 0.10, and 0.20 mol%. The photoluminescent spectrum for different concentrations of copper was studied. It was observed that the intensity of blue emission (450, 490 nm) varies with concentration mol%. In addition, with different concentration of SnO{sub 2} to 0.10 mol% Cu, the influence of the luminescence has been observed to enhance intensity and shifted to blue and red (490, 535 nm) emissions.

  13. Effect of local structural distortion on magnetic and dielectric properties in BiFeO3 with Ba, Ti co-doping

    NASA Astrophysics Data System (ADS)

    Cheng, G. F.; Ruan, Y. J.; Liu, W.; Wu, X. S.

    2015-07-01

    The structural, magnetic, and dielectric properties of Bi1-xBaxFe1-xTixO3 (x≤0.25) ceramics are studied systematically. The symmetry of the unit cell for BiFeO3 co-doping with Ba and Ti remains the space group of R3c. The addition of Ba and Ti increases the unit cell volume without changing the unit cell symmetry. The remnant magnetization decreases monotonically with increasing the doping content, which may originate from contraction in Fe-O-Fe bond and FeO6 octahedron. Charge compensation occurs in BiFeO3 with Ba and Ti co-doping, which may suppress the charge defects and decrease the magnetism. The substitution of Fe with smaller radial Ti ion supplies larger vibration space in FeO6 octahedron, which may enhance the dielectric constant and decrease the dielectric loss significantly.

  14. Effect of Co doping, capping agent and optical-structural studies of ZnO:Co2+ nanoparticles

    NASA Astrophysics Data System (ADS)

    Taheri Otaqsara, S. M.

    2011-08-01

    Co2+ doped ZnO nanoparticles (NPs) using PEG as a capping agent were prepared by colloidal wet-chemical method. The structure, morphology and characteristics of as-prepared samples were investigated. X-ray diffraction patterns studies revealed wurtzite crystal phase. STM-TEM micrographs show a spherical shape and nearly well distribution with an average particle size of ~15-20 nm. UV-VIS spectra show the presence of exciton peak at 349 nm which can be effectively tuned versus cobalt doping and PEG concentration. PL studies were done under the excitation of 347 nm, which exhibited a UV (~386 nm) and visible (blue-orange) emission peak because of free-exciton recombination and oxygen vacancy.

  15. Effect of co-doped metal caions on the properties of Y2O3:Eu3+ phosphors synthesized by gel-combustion method

    NASA Astrophysics Data System (ADS)

    Hui, Shi; Xi-Yan, Zhang; Wei-Li, Dong; Xiao-Yun, Mi; Neng-Li, Wang; Yan, Li; Hong-Wei, Liu

    2016-04-01

    Y2O3:Eu3+ phosphors co-doped with different metal cations (Li+, Na+, K+, Mg2+, Ca2+) are prepared by the gel-combustion method with Y2O3, Eu2O3, and R(NO3) x (R = Li, Na, K, Mg, Ca) serving as raw materials and glycine as fuel, calcined at 1000 °C for 2 h. The synthesized Y2O3:Eu3+ phosphors doped with different metal cations and doping ratios are characterized by x-ray diffractometry (XRD), fluorescence and phosphorescent spectrophotometer. The co-doping metal cations are advantageous to the development of Y2O3:Eu3+ lattice. All the samples can emit red light peaked at 611 nm under 254-nm excited. The luminescence intensities of co-doping samples are increased because the cations increase the electron transition probability of Eu3+ from 5D0 level to 7F level. The fluorescence lifetime of Eu3+ (5D0 → 7F2) is increased by doping metal cations.

  16. Al-Mg co-doping effect on optical and magnetic properties of ZnO nanopowders

    NASA Astrophysics Data System (ADS)

    Si, Xiaodong; Liu, Yongsheng; Wu, Xinfang; Lei, Wei; Lin, Jia; Gao, Tian; Zheng, Li

    2015-07-01

    Zn0.97 - xMgxAl0.03O (x = 0 , 0.01 , 0.03 and 0.05) nanoparticles were prepared by hydrothermal growth, and their optical and magnetic properties were systematically studied by the X-ray diffraction (XRD), the UV-visible spectrophotometer, the infrared spectrometer and the physical properties measurement system (PPMS). These results showed that all the nanopowders had hexagonal wurtzite structures. With increasing the content of Mg, the strength of the (110) intensity peak increased. When Mg atoms were not incorporated into the Zn0.97Al0.03O lattice, the infrared light transmittance was higher than that of other groups of samples. In the UV range, the absorption decreased with the increase of the concentration of Mg. Mg doping weakened the magnetic property of the nanoparticles at room temperature. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization curves were separated with the decrease of temperature due to the pinning effect between the ferromagnetic domain and antiferromagnetic domain.

  17. Co-doping of Ag into Mn:ZnSe Quantum Dots: Giving Optical Filtering effect with Improved Monochromaticity

    PubMed Central

    Hu, Zhiyang; Xu, Shuhong; Xu, Xiaojing; Wang, Zhaochong; Wang, Zhuyuan; Wang, Chunlei; Cui, Yiping

    2015-01-01

    In optics, when polychromatic light is filtered by an optical filter, the monochromaticity of the light can be improved. In this work, we reported that Ag dopant atoms could be used as an optical filter for nanosized Mn:ZnSe quantum dots (QDs). If no Ag doping, aqueous Mn:ZnSe QDs have low monochromaticity due to coexisting of strong ZnSe band gap emission, ZnSe trap emission, and Mn dopant emission. After doping of Ag into QDs, ZnSe band gap and ZnSe trap emissions can be filtered, leaving only Mn dopant emission with improved monochromaticity. The mechanism for the optical filtering effect of Ag was investigated. The results indicate that the doping of Ag will introduce a new faster deactivation process from ZnSe conduction band to Ag energy level, leading to less electrons deactived via ZnSe band gap emission and ZnSe trap emission. As a result, only Mn dopant emission is left. PMID:26446850

  18. Co doped ZnO nanowires as visible light photocatalysts

    NASA Astrophysics Data System (ADS)

    Šutka, Andris; Käämbre, Tanel; Pärna, Rainer; Juhnevica, Inna; Maiorov, Mihael; Joost, Urmas; Kisand, Vambola

    2016-06-01

    High aspect ratio cobalt doped ZnO nanowires showing strong photocatalytic activity and moderate ferromagnetic behaviour were successfully synthesized using a solvothermal method and characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), vibrating sample magnetometry (VSM) and UV-visible absorption spectroscopy. The photocatalytic activities evaluated for visible light driven degradation of an aqueous methylene orange (MO) solution were higher than for Co doped ZnO nanoparticles at the same doping level and synthesized by the same synthesis route. The rate constant for MO visible light photocatalytic degradation was 1.9·10-3 min-1 in case of nanoparticles and 4.2·10-3 min-1 in case of nanowires. We observe strongly enhanced visible light photocatalytic activity for moderate Co doping levels, with an optimum at a composition of Zn0.95Co0.05O. The enhanced photocatalytic activities of Co doped ZnO nanowires were attributed to the combined effects of enhanced visible light absorption at the Co sites in ZnO nanowires, and improved separation efficiency of photogenerated charge carriers at optimal Co doping.

  19. Photodegradation of ibuprofen by TiO2 co-doping with urea and functionalized CNT irradiated with visible light - Effect of doping content and pH.

    PubMed

    Yuan, Ching; Hung, Chung-Hsuang; Li, Huei-Wen; Chang, Wei-Hsian

    2016-07-01

    Ibuprofen (IBP) is one kind of non-steroidal anti-inflammatory drugs (NSAIDs), which are classified as Pharmaceuticals and Personal Care Products (PPCPs). IBP possesses bioactive property and the substantial use of IBP results in a harmful impact on bioreceptors even in small concentrations. Accordingly, the treatment of these wastewaters is important before discharging them into the ecosystem. The photodegradation of IBP with TiO2 co-doped with functionalized CNTs (CNT-COOH and CNT-COCl) and urea, named as N-doping CNT/TiO2, irradiated with visible light of 410 nm was investigated in this study. The titanium tetrachloride was used as the precursor of Ti. The N-doping CNT-COCl/TiO2 photocatalysts exhibited a better crystalline structure and smaller crystal size than the N-doping CNT-COOH/TiO2 photocatalyst. It might largely ascribe to strong binding between acyl chloride functional group and TiO2. About 85.0%-86.0% of IBP was degraded with N-doping CNT/TiO2 within 120 min at natural condition, which obeyed the pseudo first order reaction and the rate constant was 4.45 × 10(-3)-1.22 × 10(-2) min(-1) and 5.03 × 10(-3)-1.47 × 10(-2) min(-1) for N-doping CNT-COOH/TiO2 and N-doping CNT-COCl/TiO2, respectively. The best IBP degradation of 87.9%-89.0% was found at pH 5, which indicated superoxide radicals (O2(-)) played a key role. The optimal pH was majorly dominated by the nature of IBP and N-doping CNT/TiO2. A successful synergy effect of TiO2 and dopants was exhibited and this mainly attributed to the strong binding strength by functional group of acyl chloride (COCl) and carboxylic acid (COOH). In summary, IBP could be effectively photodegraded by the fabricated N-doping CNT/TiO2 photocatalysts. PMID:27145421

  20. Analysis of thermal and structural properties of germanate glasses co-doped with Yb3+/Tb3+ ions

    NASA Astrophysics Data System (ADS)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Dorosz, D.; Jelen, P.; Sitarz, M.

    2014-10-01

    In the work the new glass compositions in the GeO2-GaO-BaO system have been prepared and thermal, structural properties of in germanate glasses co-doped with Yb3+/Tb3+ions were studied. Glasses were obtained by conventional high-temperature melt-quenching technique. The study of the crystallization kinetics processes of glasses co-doped with 0.7Yb2O3:0.7Tb2O3 was performed with DSC measurements. The activation energies have been calculated using Freedman analysis and verified with the Flynn-Wall-Ozawa method. In this order, the DSC curves have been registered with different heating rates, between 5 and 15 degrees/min. The structure of fabricated glasses has been studied by infrared and Raman spectroscopes. The effect of heat treatment on the structural properties was determined. In all glass samples the dominated infrared absorbance band at 800 cm-1 corresponds to asymmetric stretching motions of GeO4 tetrahedra containing bridging (Ge-O(Ge)) and non-bridging (Ge-O-) oxygens. Additionally, the influence of heat treatment on the luminescent properties was evaluated. Strong luminescence at 489, 543, 586 and 621 nm corresponding to 5D4 → 7FJ (J = 6, 5, 4, 3) transitions was measured. The highest upconversion emission intensity was obtained in the germanate glass co-doped with 0.7Yb2O3/0.7Tb2O3.

  1. Effect of Ag/Al co-doping method on optically p-type ZnO nanowires synthesized by hot-walled pulsed laser deposition

    PubMed Central

    2012-01-01

    Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs. PMID:22647319

  2. Effect of (Fe, Co) co-doping on the structural, electrical and magnetic properties of ZnO nanocrystals prepared by solution combustion method

    NASA Astrophysics Data System (ADS)

    Ram, Mast; Negi, N. S.

    2016-01-01

    The structural, electrical and magnetic properties of Zn1-xCo0.05FexO (where, x=0, 1, 2, 3 and 5 mol%) nanoparticles prepared by solution combustion method are reported. The X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDX) have been used for structural and compositional analysis. The X-ray diffraction pattern showed the existence of hexagonal wurtzite structure of parent ZnO with co-doping. The microstructural studies reveal the dense nanostructured morphology of these samples. The DC electrical conductivity measurements have been carried out in the temperature range of 300-450 K. The DC electrical conductivity decreases with the increasing Fe concentration. The magnetic studies reveal room temperature ferromagnetisation in doped ZnO nanoparticles. The magnetic properties of ZnO nanoparticles improve with increasing Fe dopant concentration.

  3. Electrical and optical properties of Co-doped and undoped MoS2

    NASA Astrophysics Data System (ADS)

    Ko, Tsung-Shine; Huang, Cheng-Ching; Lin, Der-Yuh; Ruan, Yan-Jia; Huang, Ying Sheng

    2016-04-01

    Co-doped and undoped layered MoS2 crystals were grown by the chemical vapor transport method using iodine as the transport agent. Both reflectance and piezoreflectance measurements reveal two exciton transitions of the direct band edge around 1.86 and 2.06 eV for undoped MoS2 and 1.84 and 2.03 eV for Co-doped MoS2. Hall effect measurements show that the Co-doped MoS2 sample has a lower carrier concentration and mobility than the undoped sample. These differences between undoped and Co-doped MoS2 were attributed to the effect of cobalt atoms causing a small lattice distortion, lattice imperfections and/or impurity states that form trap states between the conduction band and valence band. Furthermore, photoconductivity (PC) and persistent PC results show that Co-doped MoS2 has a longer time constant and better responsivity than undoped MoS2. This work discusses the advantages of Co-doped MoS2 for photodetector applications.

  4. Formation and Characteristics of Anatase-Type Titania Solid Solution Nanoparticles Doped with Nb5+ M (M = Ga3+, Al3+, Sc3+)

    NASA Astrophysics Data System (ADS)

    Hirano, Masanori; Ito, Takaharu

    2011-10-01

    Anatase-type titania solid solutions co-doped with Nb5+ and cation M (M = Ga3+, Al3+, Sc3+) with composition Ti1-2XNbXMXO2 were directly formed as nanoparticles from precursor solutions of TiOSO4, NbCl5, and metal salts (Ga(SO4)3, Al(NO3)3, and Sc(NO3)3) under mild hydrothermal conditions at 180 °C for 5 h using the hydrolysis of urea. The effect of co-doped cation M on the formation and properties of anatase-type titania solid solutions was investigated. The region of anatse-type solid solution depended on the co-doped cation M. The composition range of anatase-type titania solid solution in the case of M = Sc3+ was much wider than that in the case of M = Ga3+ and Al3+. The increase in the amount of co-doped cation M = Ga3+, Al3+ enhanced the crystallite growth of anatase solid solutions under the hydrothermal conditions. The solid solutions co-doped with M = Al3+ showed the most improved photocatalytic activity in the three cations. The anatase-to-rutile phase transformation of solid solutions was promoted at lower temperature via the presence of co-doped cation M = Ga3+.

  5. Synthesis and spectroscopic characterization of YPO{sub 4} activated with Tb{sup 3+} and effect of Bi{sup 3+} co-doping on the luminescence properties

    SciTech Connect

    Angiuli, Fabio; Cavalli, Enrico; Belletti, Alessandro

    2012-08-15

    Single crystals of YPO{sub 4}:Tb{sup 3+}(1%) have been grown from Pb{sub 2}P{sub 2}O{sub 7} flux and their emission dynamics have been characterized by steady state and time resolved optical spectroscopy. The investigation has then been extended to green emitting phosphors with composition Y{sub 0.95-x}Tb{sub 0.05}Bi{sub x}PO{sub 4} (x=0, 0.0025, 0.005, 0.01, 0.025), synthesized by the Pechini sol-gel method and by solid state reaction. The former procedure has yielded higher quality materials in terms of size and morphology of the particles and of emission performance. The effect of the Bi{sup 3+} co-doping on the emission properties has been related to the Bi{sup 3+}{yields}Tb{sup 3+} energy transfer process as well as to the influence of the bismuth ions on the optical properties of the host lattice. - Graphical abstract: The intensity of the 370 nm excited luminescence increases with the Bi{sup 3+} content. A possible mechanism accounting for this behavior is proposed and discussed. Highlights: Black-Right-Pointing-Pointer Green emitting YPO{sub 4}:Tb{sup 3+} phosphors were synthesized by different methods. Black-Right-Pointing-Pointer The emission dynamics have been investigated under different experimental conditions. Black-Right-Pointing-Pointer The co-doping with Bi{sup 3+} ions increases the emission performance of the phosphors.

  6. Co-doped spinels: promising materials for solid state lasers

    NASA Astrophysics Data System (ADS)

    Kuleshov, Nickolai V.; Mikhailov, Victor P.; Scherbitsky, V. G.

    1994-07-01

    Optical absorption, luminescence, saturation of absorption and lifetime measurements have been carried out on Co-doped MgAl2O4 and ZnGa2O4. The crystal field parameters are estimated for the tetrahedral Co2+ ion. Three luminescence bands observed in the visible and near infrared are assigned to transitions from the 4T1(4P) level to the lower levels 4A2(4F), 4T2(4F), and 4T1(4F), respectively. Strong luminescence quenching due to nonradiative decay processes is observed MgAl2O4:Co. Saturation of Co2+ absorption at 540 nm is measured and the absorption cross section is estimated to be 2.1 + 0.2 X 10-19 cm2 in MgAl2O4.

  7. Characterization of co-doped (In, N): ZnO by indigenous thermopower measurement system

    NASA Astrophysics Data System (ADS)

    Kedia, Sanjay Kumar; Singh, Anil; Chaudhary, Sujeet

    2016-05-01

    The thermopower measurement of (In, N) co-doped ZnO thin films have been carried out using indigenous high and low temperature thermopower measurement system. The compact thermopower measurement system has been designed, developed, tested in house. The sensitivity and accuracy of indigenous thermopower system have been investigated by measuring thermopower of standard samples like Cu, Ni, Sb etc. It has been also investigated by the comparison of carrier concentration using Hall Effect and Thermopower measurement of these (In, N) co-doped ZnO thin films. The constant temperature gradient between hot and cold junction has been maintained by using the temperature controller. The room temperature and low temperature Seebeck coefficient measurements were performed on these co-doped ZnO samples. A series of experiments have been performed to detect the p-type conductivity in co-doped ZnO thin films, particularly at low temperature. The negative Seebeck coefficient observed down to 40 K established the n-type behavior in these co-doped samples.

  8. Band gap tuning and room temperature ferromagnetism in Co doped Zinc stannate nanostructures

    NASA Astrophysics Data System (ADS)

    Sumithra, S.; Victor Jaya, N.

    2016-07-01

    The effect of Co doping on structural, optical and magnetic behavior of pure and Co doped Zinc stannate (ZTO) nanostructures was investigated. Pure and Co (1%, 3% & 5%) doped Zn2SnO4 compounds were prepared through simple precipitation route. Formation of cubic inverse spinel structure and metal oxide vibrations of the samples were investigated using XRD and FTIR. Co doping influences the crystallite size producing micro strain in ZTO lattice. Poly dispersed rod like shape of the particles was examined by FESEM. Elemental composition of prepared samples was identified by EDAX analysis. Optical Absorption spectra shows significant red shift on increasing the dopant concentration which indicates the reduction in optical band gap. Visible luminescence observed from photoluminescence studies confirms the presence of oxygen vacancies and trap sites in the lattice. Magnetization analysis reveals the enhanced ferromagnetic behavior in all Co doped ZTO samples. The amplified ferromagnetic ordering in Co doped ZTO compounds has been explained in terms of defects serving as free spin polarized prophetic carriers.

  9. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  10. Magnetic and ferroelectric properties of Zn and Mn co-doped BaTiO3

    NASA Astrophysics Data System (ADS)

    Keshari Das, Sangram; Kumar Roul, Binod

    2015-06-01

    This paper reports an approach to obtaining multiferroic properties in co-doped (Zn:Mn) BaTiO3 near room temperature. Interestingly, an unusual magnetic hysteresis loop is observed in the co-doped compositions in which the central portion of the loop is squeezed. However, in the composition Ba0.9Zn0.1Ti0.9Mn0.1O3, a broad magnetic hysteresis loop is observed. Such a magnetic effect is attributed to the coexistence of antiferromagnetic and ferromagnetic exchange interactions in the system. The observation of the above type of magnetic properties is likely to be due to the presence of exchange interactions between Mn ions. A lossy-type of ferroelectric hysteresis loop is also observed in co-doped ceramic compositions near room temperature. Author S. K. Das supported financially by CSIR, New Delhi (Grant No. 09/750 (0005)/2009-EMR-I).

  11. Nitrogen and Phosphorous Co-Doped Graphene Monolith for Supercapacitors.

    PubMed

    Wen, Yangyang; Rufford, Thomas E; Hulicova-Jurcakova, Denisa; Wang, Lianzhou

    2016-03-01

    The co-doping of heteroatoms has been regarded as a promising approach to improve the energy-storage performance of graphene-based materials because of the synergetic effect of the heteroatom dopants. In this work, a single precursor melamine phosphate was used for the first time to synthesise nitrogen/phosphorus co-doped graphene (N/P-G) monoliths by a facile hydrothermal method. The nitrogen contents of 4.27-6.58 at% and phosphorus levels of 1.03-3.00 at% could be controlled by tuning the mass ratio of melamine phosphate to graphene oxide in the precursors. The N/P-G monoliths exhibited excellent electrochemical performances as electrodes for supercapacitors with a high specific capacitance of 183 F g(-1) at a current density of 0.05 A g(-1), good rate performance and excellent cycling performance. Additionally, the N/P-G electrode was stable at 1.6 V in 1 m H2 SO4 aqueous electrolyte and delivered a high energy density of 11.33 Wh kg(-1) at 1.6 V. PMID:26834002

  12. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis.

    PubMed

    Rahul, T K; Sandhyarani, N

    2015-11-21

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting. PMID:26487369

  13. Nitrogen-fluorine co-doped titania inverse opals for enhanced solar light driven photocatalysis

    NASA Astrophysics Data System (ADS)

    Rahul, T. K.; Sandhyarani, N.

    2015-10-01

    Three dimensionally ordered nitrogen-fluorine (N-F) co-doped TiO2 inverse opals (IOs) were fabricated by templating with polystyrene (PS) colloidal photonic crystals (CPCs) by infiltration. During preparation, the TiO2 precursor was treated with a mixture of nitric acid and trifluoroacetic acid to facilitate N-F co-doping into the TiO2 lattice. Enhanced solar light absorption was observed in the samples as a consequence of the red shift in the electronic band gap of TiO2 due to N-F co-doping. The photonic band gap (PBG) of these TiO2 IO films was tuned by varying the sphere size of the PS CPC templates. The as-prepared N-F co-doped TiO2 IO films were used as photocatalysts for the degradation of Rhodamine B (RhB) dye under solar light irradiation. A significant enhancement in the photocatalytic activity was observed in N-F co-doped TiO2 IO films prepared using PS spheres of 215 nm as a template, with the red edge of the PBG closer to the electronic band gap (EBG) of TiO2. 100% of the dye molecules were degraded within 2 minutes under direct solar irradiation, which is one of the fastest reaction times ever reported for RhB degradation in the presence of TiO2 photocatalysts. The N-F co-doped TiO2 IO film prepared using PS of 460 nm with its PBG centered at 695 nm also showed good photocatalytic activity. It was found that the IO films displayed improved photocatalytic activity in comparison to ordinary nanocrystalline (nc)-TiO2 films. The enhancement could be attributed to the bandgap scattering effect and the slow photon effect, leading to a significant improvement in solar light harvesting.

  14. An effective method to detect the Curie transition of Er3+/  Yb3+ co-doped BaTiO3 ceramics by up-conversion photoluminescence intensity ratio

    NASA Astrophysics Data System (ADS)

    Zuo, Qianghui; Luo, Laihui; Li, Weiping; Wang, Feifei

    2016-07-01

    In this work, BaTi1‑x‑y O3:xEr/yYb (BTO:xEr/yYb, x  =  0, y  =  0 x  =  0.005, y  =  0.005 x  =  0.01, y  =  0.005 x  =  0.01, y  =  0.01 x  =  0.015, y  =  0.01) ceramics were prepared using a conventional solid-reaction method to investigate the relation between the Curie transition and up-conversion photoluminescence (UC PL) properties. We did not find that the green or red UC PL absolute intensity of Er3+ ions had any direct correlation with the Curie phase transition. However, the variation of the ratio I g/I r of green and red UC emission intensities with temperature has similar behavior as that of dielectric constant. An evident peak of I g/I r ratio was also obtained at T C in all the BTO:xEr/yYb ceramics with different Er3+/Yb3+ co-doping contents. The present study demonstrates that UC PL intensity ratio, rather than the absolute PL intensity, is an effective optical non-contact method to detect the Curie phase transition of ferroelectrics.

  15. Study of new states in visible light active W, N co-doped TiO{sub 2} photo catalyst

    SciTech Connect

    Sajjad, Ahmed Khan Leghari; Shamaila, Sajjad; Zhang, Jinlong

    2012-11-15

    Highlights: ► Visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by sol–gel. ► Oxygen vacancies are detected in the form of new linkages as N-Ti-O, N-W-O, Ti-O-N and W-O-N. ► W, N co-doped titania has new energy states which narrows the band gap effectively. ► Oxygen vacancies are proved to be the cause for high photo catalytic activity. ► W and N co-doping plays the major role to make the composite thermally stable. -- Abstract: The visible light efficient W, N co-doped TiO{sub 2} photo catalysts are prepared by sol–gel method. New linkages of N, W and O are formed as N-Ti-O, N-W-O, Ti-O-N and W-O-N. Electron paramagnetic resonance illustrates the presence of oxygen vacancies in W, N co-doped TiO{sub 2} acting as trapping agencies for electrons to produce active species. X-ray photoelectron spectroscopy confirms the presence of new energy states. New linkages and oxygen vacancies are proved to be the main cause for the improved photo catalytic performances. W, N co-doped TiO{sub 2} has new energy states which narrow the band gap effectively. W, N co-doped TiO{sub 2} is thermally stable and retains its anatase phase up to 900 °C. 4.5% W, N co-doped TiO{sub 2} showed superior activity for the degradation of Rhodamine B and 2,4-dichlorophenol as compared to pure titania, Degussa P-25, traditional N-doped TiO{sub 2} and pure WO{sub 3}.

  16. Role of Gd3+ ion on downshifting and upconversion emission properties of Pr3+, Yb3+ co-doped YNbO4 phosphor and sensitization effect of Bi3+ ion

    NASA Astrophysics Data System (ADS)

    Dwivedi, A.; Mishra, Kavita; Rai, S. B.

    2016-07-01

    Dual-mode luminescence (downshifting-DS and upconversion-UC) properties of Pr3+/Yb3+ co-doped Y1-xGdxNbO4 (x = 0.0, 0.5, and 1.0) phosphors synthesized by solid state reaction technique have been explored with and without Gd3+ ion. The structural characterizations (XRD, SEM, and FTIR) confirm the pure phase of YNbO4 phosphor. Further, with the Gd3+ ion co-doping, the YNbO4 phosphors having a random shape and the large particle size are found to be transformed into nearly spherical shape particles with the reduced particle size. The optical band gaps (Eg) of Y1-xGdxNbO4 (x = 0.00, 0.25, 0.50, and 1.00) calculated from UV-Vis-NIR measurements are ˜3.69, 4.00, 4.38, and 4.44 eV, respectively. Moreover, YNbO4 phosphor is a promising blue emitting material, whereas Y1-x-y-zPryYbzGdxNbO4 phosphor gives intense green, blue, and red emissions via dual-mode optical processes. The broad blue emission arises due to (NbO4)3- group of the host with λex = 264 nm, whereas Pr3+ doped YNbO4 phosphor gives dominant red and blue emissions along with comparatively weak green emission on excitation with λex = 300 nm and 491 nm. The concentration dependent variation in emission intensity at 491 nm (3P0→3H4 transition) and 612 nm (1D2→3H4 transition); at 612 nm (1D2→3H4 transition) and 658 nm (3P0→3F2 transition) of Pr3+ ion in YNbO4 phosphor with λex = 300 nm and 491 nm excitations, respectively, has been thoroughly explored and explained by the cross-relaxation process through different channels. The sensitization effect of Bi3+ ion co-doping on DS properties of the phosphor has also been studied. The observed DS results have been optimized by varying the concentration of Pr3+ and Bi3+ ions, and the results are explained by the well-known simple band structure model. The study of Gd3+ co-doping reveals noticeable differences in DS characteristics of Y1-xPrxNbO4 phosphors: the overall decrement and increment (except for 612 nm emission) in intensity of DS emission on

  17. PL and EL characteristics in Bi- and rare earth-co-doped (La1-XGaX)2O3 phosphor thin films prepared by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Miyata, Toshihiro; Nishi, Yuki; Minami, Tadatsugu

    2011-12-01

    Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from newly developed Bi- and rare earth (RE)-co-doped (La1-XGaX)2O3 ((La1-XGaX)2O3:Bi,RE) phosphor thin films. (La1-XGaX)2O3:Bi,RE phosphor thin films were prepared by varying the Ga content (Ga/(La+Ga) atomic ratio) or the co-doped RE content (RE/(RE+La+Ga) atomic ratio) under co-doping Bi at a constant content (Bi/(Bi+La+Ga) atomic ratio) of 3 at.% using a combinatorial r.f. magnetron sputtering deposition method. High PL intensity was obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films prepared with a Ga content around 10 at.%; TFEL devices fabricated using the phosphor thin films exhibited high luminance. The obtained luminance intensities in EL and PL in the phosphor thin films prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed (La0.9Ga0.1)2O3:Bi,RE phosphor thin films, i.e., films prepared by co-doping Bi at a constant content with various REs at varying levels of content. All the observed emission peaks in PL and EL from (La0.9Ga0.1)2O3:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi3+ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion.

  18. Sulfur and Nitrogen Co-Doped Graphene for Metal-Free Catalytic Oxidation Reactions.

    PubMed

    Duan, Xiaoguang; O'Donnell, Kane; Sun, Hongqi; Wang, Yuxian; Wang, Shaobin

    2015-07-01

    Sulfur and nitrogen co-doped reduced graphene oxide (rGO) is synthesized by a facile method and demonstrated remarkably enhanced activities in metal-free activation of peroxymonosulfate (PMS) for catalytic oxidation of phenol. Based on first-order kinetic model, S-N co-doped rGO (SNG) presents an apparent reaction rate constant of 0.043 ± 0.002 min(-1) , which is 86.6, 22.8, 19.7, and 4.5-fold as high as that over graphene oxide (GO), rGO, S-doped rGO (S-rGO), and N-doped rGO (N-rGO), respectively. A variety of characterization techniques and density functional theory calculations are employed to investigate the synergistic effect of sulfur and nitrogen co-doping. Co-doping of rGO at an optimal sulfur loading can effectively break the inertness of carbon systems, activate the sp(2) -hybridized carbon lattice and facilitate the electron transfer from covalent graphene sheets for PMS activation. Moreover, both electron paramagnetic resonance (EPR) spectroscopy and classical quenching tests are employed to investigate the generation and evolution of reactive radicals on the SNG sample for phenol catalytic oxidation. This study presents a novel metal-free catalyst for green remediation of organic pollutants in water. PMID:25786381

  19. Co-doped mesoporous titania photocatalysts prepared from a peroxo-titanium complex solution

    SciTech Connect

    El Saliby, Ibrahim; Erdei, Laszlo; McDonagh, Andrew; Kim, Jong-Beom; Kim, Jong-Ho; Shon, Ho Kyong

    2014-01-01

    Graphical abstract: - Highlights: • Peroxotitanium complex for the synthesis of doped photocatalysts. • Fabrication of N doped and N/Ag co-doped photocatalysts. • Characterization of photocatalysts by SEM, XRD, BET, DRS and XPS. • Bench scale photocatalysis under simulated solar light using crystal violet pollutant. - Abstract: In this study, nitrogen doped and nitrogen/silver co-doped TiO{sub 2} photocatalsysts were fabricated using a sol–gel method at room temperature. The obtained gels were neutralized, washed with pure water, and calcined at 400 °C for 4 h. The photocatalysts were characterized by scanning and transmission electron microscopy, X-ray diffraction, diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, and BET specific surface area. The results showed that spherical particles with anatase structure were produced after annealing at 400 °C. N 1s (400 eV) and Ag 3d (367.3 eV) states indicated that nitrogen doping and silver co-doping were in the form of NO bonds and AgO, respectively. The photocatalytic activity of photocatalysts was investigated using a batch reactor system exposed to artificial solar irradiation. Both nitrogen and silver/nitrogen co-doped materials were effective in the photocatalytic degradation of hexamethyl pararosaniline chloride.

  20. Magnetic structure and interaction in (Sb, Co) co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Samanta, K.; Sardar, M.; Singh, S. P.; Katiyar, R. S.

    2014-10-01

    The magnetic behaviour of (Co, Sb) co-doped ZnO thin films grown by pulsed laser deposition is investigated. The irreversibility (ZFC-FC bifurcation) in low field (H = 100 Oe) magnetization and small hysteresis below 300 K are similar in samples with or without Sb co-doping. Both the phenomena originate from the presence of blocked supermoments in the samples. Incorporation of Sb only increases the saturation magnetization and coercivity. The quantitative increase in moment due to Sb co-doping suggests a transfer of electrons from Co ions to Sb-related acceptor complexes. This is supported by a decrease in the number of electronic transitions from Co d electrons to the conduction band seen in optical transmission spectroscopy when Sb is added. The high field susceptibility data show the existence of supermoments with antiferromagnetic interaction between them. We find that the value of the effective antiferromagnetic molecular field constant decreases with increasing Co concentration, revealing that the supermoments are bound magnetic polarons around intrinsic donors, rather than coming from Co precipitates. True ferromagnetism (overlapping polarons) can emerge either with larger intrinsic donors, or with acceptors with shallower levels, than those created by Sb co-doping. Our results suggest that Sb-related acceptor states may be unstable towards accepting electrons from deep d levels of Co ions.

  1. Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

    NASA Astrophysics Data System (ADS)

    Li, Jinglei; Li, Fei; Zhuang, Yongyong; Jin, Li; Wang, Linghang; Wei, Xiaoyong; Xu, Zhuo; Zhang, Shujun

    2014-08-01

    The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (˜100,000) and low dielectric loss (˜0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5-7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.

  2. Proton and Gamma Radiation Effects in Undoped, Single-doped and co-doped YLiF4 and LuLiF4

    NASA Technical Reports Server (NTRS)

    Lee, Hyung; Bai, Yingxin; Yu, Kirong; Singh, U.

    2009-01-01

    Proton and gamma radiation effects in various YLiF4 and LuLiF4 crystals have been investigated. The radiation induced color centers compared with six different kinds of crystal samples in ranges up to 200 krads and 200 MeV. The radiation induced absorption coefficients are strongly dependent on polarization and concentration of rare-earth ions.

  3. Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO3 film

    NASA Astrophysics Data System (ADS)

    Peng, Zeng-Wei; Wang, Ying-Long; Liu, Bao-Ting

    2015-08-01

    Photovoltaic (PV) effect of polycrystalline Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) film grown on Pt(111)/Ti/SiO2/Si(001) substrate using sol-gel method has been investigated. The BLFNO film possesses good ferroelectric property and large twice-remanent polarization. It is found that PV response exhibited a strong dependence on the potential of top indium tin oxide (ITO) and bottom Pt electrode. The open circuit voltage is -0.67 V when the potential of ITO electrode is higher than that of Pt electrode and 0.45 V when the potential of ITO electrode is lower than that of Pt electrode. This can be interpreted by the variation of barrier heights at both ITO/BLFNO and BLFNO/Pt interfaces.

  4. Intense upconversion luminescence and effect of local environment for Tm3+/Yb3+ co-doped novel TeO2-BiCl3 glass system.

    PubMed

    Wang, Guonian; Dai, Shixun; Zhang, Junjie; Wen, Lei; Yang, Jianhu; Jiang, Zhonghong

    2006-05-15

    We present the results of a study that uses theoretical and experimental methods to investigate the characteristics of the upconversion luminescence of Tm3+/Yb3+ codoped TeO2-BiCl3 glass system as a function of the BiCl3 fraction. These glasses are potentially important in the design of upconversion fiber lasers. Effect of local environment around Tm3+ on upconversion fluorescence intensity was analyzed by theoretical calculations. The structure and spectroscopic properties were investigated in the experiments by measuring the Raman spectra, IR transmission spectra, and absorption and fluorescence intensities at room temperature. The results indicate that blue luminescence quantum efficiency increases with increasing BiCl3 content from 10 to 60 mol%, which were interpreted by the increase of asymmetry of glass structure, decrease of phonon energy and removing of OH- groups. PMID:16378753

  5. A comparative investigation on structure and multiferroic properties of bismuth ferrite thin films by multielement co-doping

    SciTech Connect

    Dong, Guohua; Tan, Guoqiang Luo, Yangyang; Liu, Wenlong; Xia, Ao; Ren, Huijun

    2014-12-15

    Highlights: • Multielement (Tb, Cr and Mn) co-doped BiFeO{sub 3} films were fabricated by CSD method. • Multielement co-doping induces a structural transition. • It is found effective to stabilize the valence of Fe ions at +3 by the strategy. • The co-doping at A/B-sites gives rise to the superior multiferroic properties. - Abstract: (Tb, Cr and Mn) multielement co-doped BiFeO{sub 3} (BTFCMO) thin films were prepared by the chemical solution deposition method on fluorine doped tin oxide (FTO) substrates. X-ray diffraction, Rietveld refinement and Raman analyses revealed that a phase transition from rhombohedral to triclinic structure occurs in the multielement co-doped BiFeO{sub 3} films. It is found that the doping is conducive to stabilizing the valence of Fe ions and reducing leakage current. In addition, the highly enhanced ferroelectric properties with a huge remanent polarization (2P{sub r}) of 239.6 μC/cm{sup 2} and a low coercive field (2E{sub c}) of 615.6 kV/cm are ascribed to the well film texture, the structure transition and the reduced leakage current by the co-doping. Moreover, the structure transition is the dominant factor resulting in the significant enhancement observed in magnetization (M{sub s} ∼ 10.5 emu/cm{sup 3}), owing to the collapse of the space-modulated spin structure. In this contribution, these results demonstrate that the multielement co-doping is in favor of the enhanced multiferroic properties of the BFO films for possible multifunctional applications.

  6. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction.

    PubMed

    Peera, S Gouse; Arunchander, A; Sahu, A K

    2016-08-14

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ∼110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity

  7. Influence of praseodymium and nitrogen co-doping on the photocatalytic activity of TiO{sub 2}

    SciTech Connect

    Wu, Jing; Liu, Qingju; Gao, Pan; Zhu, Zhongqi

    2011-11-15

    Highlights: {yields} The praseodymium and nitrogen co-doped TiO{sub 2} (Pr-N-TiO{sub 2}) powders were prepared and characterized. {yields} The effects on the photocatalytic activity were studied. {yields} The results exhibit that the spectrum absorption region of the co-doped sample is red-shifted to visible light and the recombination of the photo-generated pairs is inhibited. {yields} The photocatalytic activity is greatly improved. -- Abstract: TiO{sub 2} nanoparticles co-doped with different doping concentration of Pr and N were prepared by sol-gel method combined with microwave chemical method. The samples were characterized by XRD, FT-IR, UV-vis, TEM, XPS, PL, and the photocatalytic activity were investigated by photocatalytic degradation of methylene blue (MB). The results indicate that Pr and N ions incorporate into the lattice of TiO{sub 2}, co-doping restrains the increase of grain size, broadens the absorption region to visible light, and inhibits the recombination of the photo-generated electrons and holes. Moreover, the photocatalytic activity of Pr-N-TiO{sub 2} is remarkable improved due to the synergistic effect of the co-doped ions. The degradation rate of MB in 6 h is 92.81%, which is much higher than that of Degussa P25 (45.01%).

  8. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Peera, S. Gouse; Arunchander, A.; Sahu, A. K.

    2016-07-01

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ~110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity and

  9. Cumulative effect of transition metals on nitrogen and fluorine co-doped graphite nanofibers: an efficient and highly durable non-precious metal catalyst for the oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Peera, S. Gouse; Arunchander, A.; Sahu, A. K.

    2016-07-01

    Nitrogen and fluorine co-doped graphite nanofibers (N/F-GNF) and their cumulative effect with Fe and Co have been developed as an alternative non-precious metal catalyst for efficient oxygen reduction reaction (ORR) in acidic media. The synergistic effect between the doped hetero atoms and the co-ordinated Fe and Co towards ORR activity and durability of the catalyst is deeply investigated. A high ORR onset potential comparable with commercial Pt/C catalyst is observed with the Fe-Co/NF-GNF catalyst, which indicates that this catalyst is a potential alternative to Pt/C. A fivefold increase in mass activity is achieved by the Fe-Co/NF-GNF catalyst compared to the simple N/F-GNF catalyst, which endorses the significant role of transition metal atoms in enhancing ORR activity. The advanced Fe-Co/NF-GNF catalyst also exhibits complete tolerance to CH3OH and CO. The Fe-Co/NF-GNF catalyst also exhibits excellent durability towards the ORR with only a 10 mV negative shift in its half wave potential after a 10 000 repeated potential cycling test, whereas in the case of a commercial Pt/C catalyst there was an ~110 mV negative shift under similar environmental conditions. More stringent corrosive test cycles were also performed by maintaining the cell as high as 1.4 V with a later decrease to 0.6 V vs. RHE for 300 cycles, which showed the excellent durability of the Fe-Co/NF-GNF catalyst in comparison with the Pt/C catalyst. XPS analysis of the Fe-Co/NF-GNF catalyst presents the ORR active chemical states of N (pyridinic-N and graphitic-N) and F (semi-ionic-F) and the co-ordinated sites of Fe and Co species with the dopants. The excellent performance and durability of the Fe-Co/NF-GNF catalyst is due to the synergistic effect between the hetero atoms dopants (N and F) and strong co-ordinating bonds of M-N-C, which protect the graphene layers around the metallic species and greatly mitigates the leaching of Co and Fe during the long term cycling test. The high activity and

  10. Fabrication and photoelectric properties of Er3+ and Yb3+ co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Feng, Wei; Wang, Xiangfu; Meng, Lan; Yan, Xiaohong

    2016-01-01

    In this paper, the Er3+ and Yb3+ co-doped ZnO films deposited by a novel thermal decomposition method under different annealing temperature process have been reported. The effects of annealing temperature on the morphology and properties of the films are systematically studied. The resulting spectra demonstrate that the Er3+ and Yb3+ co-doped ZnO films possessed the property of up-conversion, converting IR light into visible light that can be absorbed by amorphous silicon solar cell. After all, inner photoelectric effect of the Er3+ and Yb3+ co-doped ZnO films in the amorphous as a light scattering layer are also found with an infrared 980 nm laser as excitation source.

  11. W/Mo co-doped BiVO4 for photocatalytic treatment of polymer-containing wastewater in oilfield

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Li, Wei; Wan, Wenchao; Zhang, Ruiyang; Lin, Yuanhua

    2015-06-01

    Polymer flooding is an effective way to enhance oil recovery (EOR). However, the treatment of the oily wastewater becomes an urgent issue. Photocatalysis is a promising approach for this purpose. In this report, W/Mo co-doped BiVO4 particles are synthesized by hydrothermal method. W/Mo co-doping could promote an effective separation of photogenerated carriers reflecting from the 6 times higher photocurrent density compared to pure BiVO4. The photodegradation of partially hydrolyzed polyacrylamide (HPAM) over 0.5 at.% W and 1.5 at.% Mo co-doped BiVO4 is 43% under UV-vis light irradiation for 3 h, which is much higher than that of pure BiVO4 (18%).

  12. Local structure investigation of (Co, Cu) co-doped ZnO nanocrystals and its correlation with magnetic properties

    NASA Astrophysics Data System (ADS)

    Tiwari, N.; Doke, S.; Lohar, A.; Mahamuni, Shailaja; Kamal, C.; Chakrabarti, Aparna; Choudhary, R. J.; Mondal, P.; Jha, S. N.; Bhattacharyya, D.

    2016-03-01

    Pure, Co doped and (Co, Cu) co-doped ZnO nanocrystals have been prepared by wet chemical route at room temperature to investigate the effect of Cu doping in Co doped ZnO nanocrystals . The nanocrystals have initially been characterized by X-ray diffraction, FTIR, Raman, optical absorption and EPR spectroscopy and the results were corroborated with DFT based electronic structure calculations. Magnetic properties of the samples have been investigated by studying their magnetic hysteresis behavior and temperature dependence of susceptibilities. Finally the local structure at the host and dopant sites of the nanocrystals have been investigated by Zn, Co and Cu K edges EXAFS measurements with synchrotron radiation to explain their experimentally observed magnetic properties.

  13. Structural, optical and magnetic properties of ultrafine mono dispersed Co doped maghemite nanoparticles

    NASA Astrophysics Data System (ADS)

    Gaur, Umesh Kumar; Priyadarshi, Himanshu; Kumar, Anil; Varma, G. D.

    2015-06-01

    Ultrafine Co doped γ- Fe2O3 nanoparticles have been synthesized by co-precipitation method and studied the effect of doping on structural, optical and magnetic properties. The XRD results confirm that synthesized material is γ- Fe2O3 nanoparticles, and the particle sizes are 10 and 3.6 nm for 5 and 10 % Co doped samples, respectively. FESEM, TEM and optical characterization reveal decrease in particle size and increase in band gap with increased doping level. Room temperature M-H plots indicate the increase in magnetization (63.7 emu/g for 10 % doped sample) with increasing doping. A small shift towards positive axis is observed in the M-H plots of doped sample. In this paper the correlation between the structural characteristics and observed optical and magnetic properties has been described and discussed.

  14. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    NASA Astrophysics Data System (ADS)

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C. S.; de Moura, Ana P.; Freire, Poliana G.; da Silva, Luis F.; Longo, Elson; Munoz, Rodrigo A. A.; Lima, Renata C.

    2015-10-01

    We report for the first time a rapid preparation of Zn1-2xCoxNixO nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green-orange-red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO.

  15. Synthesis of N, F and S co-doped graphene quantum dots

    NASA Astrophysics Data System (ADS)

    Kundu, Sumana; Yadav, Ram Manohar; Narayanan, T. N.; Shelke, Manjusha V.; Vajtai, Robert; Ajayan, P. M.; Pillai, Vijayamohanan K.

    2015-07-01

    Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants.Graphene quantum dots (GQDs) are a promising category of materials with remarkable size dependent properties like tunable bandgap and photoluminescence along with the possibility of effective chemical functionalization. Doping of GQDs with heteroatoms is an interesting way of regulating their properties. Herein, we report a facile and scalable one-step synthesis of luminescent GQDs, substitutionally co-doped with N, F and S, of ~2 nm average size by a microwave treatment of multi-walled carbon nanotubes in a customized ionic liquid medium. The use of an ionic liquid coupled with the use of a microwave technique enables not only an ultrafast process for the synthesis of co-doped GQDs, but also provides excellent photoluminescence quantum yield (70%), perhaps due to the interaction of defect clusters and dopants. Electronic supplementary information (ESI) available: PLQY calculation, MWCNT synthetic details, TGA analysis and tabular format of GQD synthesis processes. See DOI: 10.1039/c5nr02427g

  16. Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: Optical and electrochemical properties

    SciTech Connect

    Romeiro, Fernanda C.; Marinho, Juliane Z.; Lemos, Samantha C.S.; Moura, Ana P. de; Freire, Poliana G.; Silva, Luis F. da; Longo, Elson; Munoz, Rodrigo A.A.; Lima, Renata C.

    2015-10-15

    We report for the first time a rapid preparation of Zn{sub 1−2x}Co{sub x}Ni{sub x}O nanoparticles via a versatile and environmentally friendly route, microwave-assisted hydrothermal (MAH) method. The Co, Ni co-doped ZnO nanoparticles present an effect on photoluminescence and electrochemical properties, exhibiting excellent electrocatalytic performance compared to undoped ZnO sample. Photoluminescence spectroscopy measurements indicated the reduction of the green–orange–red visible emission region after adding Co and Ni ions, revealing the formation of alternative pathways for the generated recombination. The presence of these metallic ions into ZnO creates different defects, contributing to a local structural disorder, as revealed by Raman spectra. Electrochemical experiments revealed that the electrocatalytic oxidation of dopamine on ZnO attached to multi-walled carbon nanotubes improved significantly in the Co, Ni co-doped ZnO samples when compared to pure ZnO. - Graphical abstract: Rapid synthesis of Co, Ni co-doped ZnO nanoparticles: optical and electrochemical properties. Co, Ni co-doped ZnO hexagonal nanoparticles with optical and electrocatalytic properties were successfully prepared for the first time using a microwave hydrothermal method at mild conditions. - Highlights: • Co{sup 2+} and Ni{sup 2+} into ZnO lattice obtained a mild and environmentally friendly process. • The heating method strongly influences in the growth and shape of the particles. • Short-range defects generated by the ions insertion affects the photoluminescence. • Doped ZnO nanoparticles improve the electrocatalytic properties of pure oxide.

  17. Growth of Co-doped (Ba,Sr)TiO 3 single crystals and their characterization

    NASA Astrophysics Data System (ADS)

    Madeswaran, S.; Giridharan, N. V.; Jayavel, R.; Subramanian, C.

    2002-04-01

    Single crystals of Co-doped B 1- xSr xTiO 3 (Co:BST) have been grown by high-temperature solution growth technique. The dopant has significant effect on the growth parameters and considerably reduced the twin formation in the grown crystal. Bulk single crystals of dimensions 5×5×4 mm 3 have been grown with optimized growth parameters. Layer growth and vein-like structure patterns, indicative of 2D nucleation mechanism, have been observed on the grown crystals. The presence of dopant in the grown crystals was confirmed by EDX analysis. For lower doping concentration (0.1 mol%), the crystal possesses tetragonal structure and changes to cubic for higher dopant level (1 and 5 mol%) Co doping in BST increases the dielectric constant values and decreases the Curie temperature ( Tc). The spontaneous polarization ( Ps) value for 0.1 mol% of Co-doped BST crystal is measured to be 22 μc/cm 2 and the value decreases with increasing Co concentration.

  18. Preparation and photocatalytic activity of nonmetal Co-doped titanium dioxide photocatalyst

    NASA Astrophysics Data System (ADS)

    Sun, Xiaogang; Xing, Jun; Qiu, Jingping

    2016-06-01

    A series of boron and sulfur co-doped titanium dioxide (TiO2) photocatalysts were prepared by a sol-gel method using boric acid, thiourea and tetrabutyl titanate [Ti(OC4H9)4] as precursors. The photoabsorbance of as-prepared photocatalysts was measured by UV-Vis diffuse reflectance spectroscopy (DRS), and its microstructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and N2 adsorption-desorption measurements. The prepared photocatalysts consisted of the anatase phase mainly in the form of spherical particles. The photocatalytic performance was studied by photodegradation of methyl blue (MB) in water under UV and visible light irradiation. The calcination temperature and the codoping content influenced the photoactivity. The synergistic effect of boron and sulfur co-doping played an important role in improving the photocatalytic activity. In addition, the possibility of cyclic usage of codoped TiO2 was also confirmed, the photocatalytic activity of TiO2 remained above 91% of that of the fresh sample after being used four times. It was shown that the co-doped TiO2 could be activated by visible light and could thus be potentially applied for the treatment of water contaminated by organic pollutants.

  19. ND laser with co-doped ion(s) pumped by visible laser diodes

    NASA Astrophysics Data System (ADS)

    Scheps, Richard

    1993-04-01

    The 1.06 microns Nd transition in a co-doped Cr,Nd:Gd3Sc2Ga3O12 (Cr,Nd:GSGG) gain element is obtained by diode pumping Cr(3+) at 670 run and produces efficient, low threshold laser operation. Although co-doped Cr,Nd:GSGG was developed for more efficient flashlamp pumping, it has the desirable property of having an extraordinarily broad absorption to allow for efficient diode pumping relative to the ND:YAG laser. The consequent broad bandwidth tolerance of the Cr,Nd:GSGG for the diode pumping radiation allows diode pumping of the 1.06 microns transition without regard to the wavelength of the visible diodes which has the potential for reducing the cost of the semiconductor pump and also demonstrates the extended versatility of these diodes which previously had been restricted to pump the Cr(3+) tunable vibronic lasers. CW and long pulse diode pumping provided pump power levels as high as 300 mW CW and 1 W pulsed. The lowest threshold power was measured at 938 micron W and the highest output power was obtained at 43 mW CW and 173 mW pulsed. The best slope efficiency obtained was 42.1%, 78% of the theoretical maximum. Loss measurements indicate a value of 0.4%/cm.

  20. Spectroscopic properties of bismuth-germanate glasses co-doped with erbium and holmium ions

    NASA Astrophysics Data System (ADS)

    Ragin, Tomasz; Kochanowicz, Marcin; Żmojda, Jacek; Dorosz, Dominik

    2014-05-01

    In the article an analysis of thermal and spectroscopic properties of heavy metal oxide glasses from the Bi2O3-Ga2O3- Na2O-Ge2O3 system doped with rare earth elements were presented. It has been focused on the elaboration of the glass composition in terms of low phonon energy, high transparency in the range of infrared region and high thermal stability (ΔT=160 °C) required in optical fiber technology. Fabricated glasses co-doped with Er3+/Ho3+ions under 980 nm laser diode excitation exhibit emission at 1.55 μm (Er3+: 4I 13/2 → 4I15/2) and 2.0 μm (Ho3+: 4I7 → 5I8). The emission at 2.0 μm results from the Er3+ → Ho3+energy transfer. Taking into account great thermal stability and good optical properties such as high transparency (up to 80%) or high refractive index (2.23), the fabricated bismuth-germanate glass co-doped with Er3+/Ho3+ is promising material for construction of active optical fibers operating in the range of mid-infrared.

  1. Magnetic and optical properties of Co-doped and Mn-doped ZnO nanocrystalline particles

    NASA Astrophysics Data System (ADS)

    Alsmadi, Abdel; Salameh, B.; Shatnawi, M.; Alnawashi, G.; Bsoul, I.

    We carried out a systematic study on the effect of Co doping and Mn doping on the structural, magnetic and optical properties of ZnO nanocrystalline particles, using x-ray diffraction, x-ray photoelectron spectroscopy (XPS), Quantum Design PPMS-9 magnetometry, and Ultra Violet-Visible spectroscopy. The Zn1- x CoxO and Zn1- x MnxO nanoparticles with 0 <= x <= 0 . 1 were successfully prepared by the formal solid-state reaction method. The XPS results and the XRD analysis with full structural Rietveld refinement reveal that both structures have hexagonal wurtzite structure. For all Co-doped ZnO nanoparticles under investigation, the field dependence of the magnetization curves exhibits ferromagnetic behavior with relatively small coercive fields at room temperature. In addition, we found a signature for antiferromagnetic ordering between the Co ions. For the Mn-doped ZnO nanoparticles, we observed ferromagnetic behavior only below 50 K. We also observed a strong correlation between the magnetic and optical behavior of the Co-doped ZnO nanoparticles. Optical diffuse reflectance and absorption spectra exhibit a red shift at room temperature in the absorption band edge with increasing Co-doping. The red shift is attributed to the sp-d exchange interaction between free charge carriers in ZnO band and the localized magnetic moments.

  2. Structural transformation and multiferroic properties of Ba-Mn co-doped BiFeO3

    NASA Astrophysics Data System (ADS)

    Rout, Jyoshna; Choudhary, R. N. P.

    2016-01-01

    Pure BiFeO3 and Bi1-xBaxFe1-xMnxO3 (x = 0.10, 0.20) fine ceramics were synthesized using mechano-synthesis route. The influence of co-doping (Ba-Mn) on structural and multiferroic properties of BiFeO3 has been studied in different experimental conditions. X-ray diffraction patterns, Rietveld structural refinement of XRD patterns and Fourier transform infrared (FTIR) spectra reveal the structural transition from rhombohedral (R3c) to the biphasic structure (R3c + P4mm) on co-doping. The co-doping improves surface morphology and also reduces the particle size. The room temperature M-H loops of all samples showed antiferromagnetic/weak ferromagnetic behavior. Magnetoelectric coupling coefficient determination is carried out to reveal extent of intimate interaction between electric and magnetic dipoles interaction in the samples. Room temperature occurrence of ferromagnetism, ferroelectricity and magnetoelectric effect supports the observation of multiferroism and magnetoelectric coupling in BiFeO3. Thus, co-doping at Bi- and Fe-sites of BiFeO3 can improve multiferroic properties of BiFeO3 for various applications.

  3. Transparent and conductive Al/F and In co-doped ZnO thin films deposited by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Hadri, A.; Taibi, M.; El hat, A.; Mzerd, A.

    2016-02-01

    In doped ZnO (IZO), In-Al co-doped ZnO (IAZO) and In-F co-doped ZnO (IFZO) were deposited on glass substrates at 350 °C by spray pyrolysis technique. The structural, optical and electrical properties of as-deposited thin films were investigated and compared. A polycrystalline and (002) oriented wurtzite crystal structure was confirmed by X-ray patterns for all films; and the full width at half -maximum (FWHM) of (002) diffraction peak increased after co-doping. The investigation of the optical properties was performed using Uv-vis spectroscopy. The average transmittances of all the films were between 70 and 85%. Hall Effect measurements showed that the electrical conductivity of co-doped films increased as compared with IZO thin film. The highest conductivity of about 16.39 Ω-1 cm-1 was obtained for as-deposited IFZO thin film. In addition, the thin films were annealed at 350 °C for two hour under Ar atmosphere and their optical, electrical properties and the associated photoluminescence (PL) responses of selected films were analysed. After annealing, the electrical conductivity of all thin films was improved and the optical transmittance remained above 70%. Room temperature PL revealed that the annealed IAZO thin film had a strong green emission than that of IZO film.

  4. Er{sup 3+}/Yb{sup 3+}co-doped bismuth molybdate nanosheets upconversion photocatalyst with enhanced photocatalytic activity

    SciTech Connect

    Adhikari, Rajesh; Gyawali, Gobinda; Cho, Sung Hun; Narro-García, R.; Sekino, Tohru; Lee, Soo Wohn

    2014-01-15

    In this paper, we report the microwave hydrothermal synthesis of Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst. Crystal structure, morphology, elemental composition, optical properties and BET surface area were analyzed in detail. Infrared to visible upconversion luminescence at 532 nm and 546 nm of the co-doped samples was investigated under excitation at 980 nm. The results revealed that the co-doping of Er{sup 3+}/Yb{sup 3+} into Bi{sub 2}MoO{sub 6} exhibited enhanced photocatalytic activity for the decomposition of rhodamine B under simulated solar light irradiation. Enhanced photocatalytic activity can be attributed to the energy transfer between Er{sup 3+}/Yb{sup 3+} and Bi{sub 2}MoO{sub 6} via infrared to visible upconversion from Er{sup 3+}/Yb{sup 3+} ion and higher surface area of the Bi{sub 2}MoO{sub 6} nanosheets. Therefore, this synthetic approach may exhibit a better alternative to fabricate upconversion photocatalyst for integral solar light absorption. - Graphical abstract: Schematic illustration of the upconversion photocatalysis. Display Omitted - Highlights: • Er{sup 3+}/Yb{sup 3+} co-doped Bi{sub 2}MoO{sub 6} upconversion photocatalyst is successfully synthesized. • We obtained the nanosheets having high surface area. • Upconversion of IR to visible light was confirmed. • Upconversion phenomena can be utilized for effective photocatalysis.

  5. Near infrared luminescence in Yb3+/Ho3+: co-doped germanate glass

    NASA Astrophysics Data System (ADS)

    Kochanowicz, Marcin; Żmojda, Jacek; Miluski, Piotr; Ragin, Tomasz; Jeleń, Piotr; Sitarz, Maciej; Dorosz, Dominik

    2015-12-01

    The near-infrared emission of low phonon (805 cm-1) germanate glasses from GeO2-Ga2O3-BaO system co-doped with 0.7Yb2O3/(0.07-0.7)Ho2O3 ions has been investigated. Luminescence at 2.1 μm corresponding to 5I7 → 5I8 transition in holmium was obtained by energy transfer between Yb3+ and Ho3+ ions. The optimization of the activator content and the concentration ratio were conducted with the purpose of maximizing the efficiency of energy transfer and as a consequence luminescence intensity at 2mm. The highest value of the luminescence intensity was obtained in glass codoped with 0.7Yb2O3/0.15 Ho2O3.

  6. Photocatalytic performance of nitrogen, osmium co-doped TiO2 for removal of eosin yellow in water under simulated solar radiation.

    PubMed

    Kuvarega, Alex T; Krause, Rui W M; Mamba, Bhekie B

    2013-07-01

    Nitrogen, osmium co-doped TiO2 photocatalysts were prepared by a modified sol-gel method using ammonia as the nitrogen source and osmium tetroxide as the source of osmium. The role of rutile phase OsO2 in enhancing the photocatalytic activity of rutile TiO2 towards the degradation of Eosin Yellow was investigated. The materials were characterised by various techniques that include FTIR, Raman, XRD, SEM, EDS, TEM, TGA and DRUV-Vis. The amorphous, oven dried sample was transformed to the anatase and then the rutile phase with increasing calcination temperature. DRUV-Vis analysis revealed a red shift in absorption with increasing calcination temperature, confirmed by a decrease in the band gap of the material. The photocatalytic activity of N, Os co-doped TiO2 was evaluated using eosin yellow degradation and activity increased with increase in calcination temperature under simulated solar irradiation. The rutile phase of the co-doped TiO2 was found to be more effective in degrading the dye (k(a) = 1.84 x 10(-2) min(-1)) compared to the anatase co-doped phase (k(a) = 9.90 x 10(-3) min(-1)). The enhanced photocatalytic activity was ascribed to the synergistic effects of rutile TiO2 and rutile OsO2 in the N, Os co-doped TiO2. PMID:23901525

  7. Influence of Li-N and Li-F co-doping on defect-induced intrinsic ferromagnetic and photoluminescence properties of arrays of ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ghosh, Shyamsundar; Gopal Khan, Gobinda; Varma, Shikha; Mandal, Kalyan

    2012-08-01

    The role of N/F co-doping on the defect-driven room-temperature d0 ferromagnetism in group-I element Li doped ZnO nanowire arrays has been investigated. The ferromagnetic signature of pristine ZnO nanowires has enhanced significantly after Li doping but the Li-N co-doping has found to be more effective in the stabilization and enhancement in room-temperature ferromagnetism in ZnO nanowires. Saturation magnetization in Li-doped ZnO nanowires found to increase from 0.63 to 2.52 emu/g and the Curie temperature rises up to 648 K when 10 at. % N is co-doped with 6 at. % Li. On the other hand, Li-F co-doping leads to exhibit much poor room-temperature ferromagnetic as well as visible luminescence properties. The valance state of the different dopants is estimated by x-ray photoelectron spectroscopy while the photoluminescence spectra indicate the gradual stabilization of Zn vacancy defects or defect complexes in presence of No acceptor states, which is found to be responsible for the enhancement of intrinsic ferromagnetism in ZnO:Li matrix. Therefore, the Li-N co-doping can be an effective parameter to stabilize, enhance, and tune zinc vacancy-induced room-temperature d0 ferromagnetism in ZnO nanowires, which can be an exciting approach to prepare new class of spintronic materials.

  8. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Haritha, P.; Venkatramu, V.; Kim, S. H.

    Combustion derived Er3+ -doped Y2O3 and Er3+/Yb3+co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er3+ -doped and Er3+/Yb3+ co-doped Y2O3 powders were studied under 379 nm excitation. The strong up-conversion luminescence for Er3+ -doped and Er3+/Yb3+ co-doped Y2O3 powders have been observed under 978 nm laser excitation. The effect of Yb3+ addition on optical and luminescence properties of Er3+:Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er3+ -doped Y2O3 is co-doped with Yb3+ ions. The effect of co-doping of Yb3+ ions on the visible luminescence intensity of Er3+ has been studied and the mechanism responsible for the variation in the green and red intensity is discussed.

  9. Efficient visible upconversion luminescence in Er3+ and Er3+/Yb3+ co-doped Y2O3 phosphors obtained by solution combustion reaction.

    PubMed

    Singh, Vijay; Haritha, P; Venkatramu, V; Kim, S H

    2014-05-21

    Combustion derived Er(3+) -doped Y2O3 and Er(3+)/Yb(3+)co-doped Y2O3 powders have been characterized by X-ray diffraction, energy dispersive X-ray analysis, Fourier transform infrared spectroscopy and laser excited spectroscopy. Formation of Y2O3 phosphor was confirmed by X-ray diffraction and energy dispersive X-ray analysis. The vibrational properties of Y2O3 powder was studied by Fourier transform infrared spectroscopy. The luminescence spectra of Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders were studied under 379nm excitation. The strong up-conversion luminescence for Er(3+) -doped and Er(3+)/Yb(3+) co-doped Y2O3 powders have been observed under 978nm laser excitation. The effect of Yb(3+) addition on optical and luminescence properties of Er(3+):Y2O3 powders were studied. The ratio of red to green intensity has been enhanced when Er(3+) -doped Y2O3 is co-doped with Yb(3+) ions. The effect of co-doping of Yb(3+) ions on the visible luminescence intensity of Er(3+) has been studied and the mechanism responsible for the variation in the green and red intensity is discussed. PMID:24682034

  10. Co-doping of CVD diamond with boron and sulfur

    NASA Astrophysics Data System (ADS)

    Eaton, Sally Catherine

    Boron is well-established as a p-type dopant in diamond, but attempts to find a viable n-type dopant remain unsuccessful. In 1999, sulfur was reported to give n-type conductivity. However, later measurements indicated that the samples contained boron and were p-type. Recently, we showed that diamond co-doped with sulfur and small quantities of boron shows n-type conductivity, which was established by Mott-Schottky analyses, thermoelectric effect, Hall measurements, scanning tunneling spectroscopy (STS), and UV open-circuit photo-potential. At higher boron concentrations, a transition to p-type behavior is observed due to overcompensation. Experiments performed without boron in the feed gas or without residual boron in the reactor chamber showed no sulfur incorporation and no change in conductivity. There is evidence that the excess sulfur concentration in the near-surface region is not stable. At room temperature and below, the activation energies range from 0.06 to 0.12 eV. Above 400K there is an irreversible loss in conductivity and the activation energy increases to approximately 1.3 eV. Additionally, we observed by SIMS that there exists a concentration gradient in sulfur with film depth. This sulfur concentration gradient is also observed in our electrical measurements. STS shows a decrease in conductivity with film depth and Hall effect measurements show both p-type and n-type coefficients for samples which are n-type in the near-surface region. The flat-band potential obtained from the Mott-Schottky experiments is only 1 to 1.5 V more negative on the electrochemical scale than that for boron-doped diamond. This implies that the Fermi level is only 1 to 1.5 eV higher than the Fermi level in boron-doped diamond. This observation implies that the n-type conductivity is not by excitation of electrons to the conduction band, but by an alternate mechanism that occurs in the middle of the band gap. One such possibility is an acceptor impurity band. Electrons from

  11. Highly piezoelectric co-doped AlN thin films for wideband FBAR applications.

    PubMed

    Yokoyama, Tsuyoshi; Iwazaki, Yoshiki; Onda, Yosuke; Nishihara, Tokihiro; Sasajima, Yuichi; Ueda, Masanori

    2015-06-01

    We report piezoelectric materials composed of charge-compensated co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) thin films. The effect of the dopant element into AlN on the crystal structure, and piezoelectric properties of co-doped AlN was determined on the basis of a first-principles calculation, and the theoretical piezoelectric properties were confirmed by experimentally depositing thin films of magnesium (Mg) and zirconium (Zr) co-doped AlN (Mg-Zr-doped AlN). The Mg-Zrdoped AlN thin films were prepared on Si (100) substrates by using a triple-radio-frequency magnetron reactive co-sputtering system. The crystal structures and piezoelectric coefficients (d33) were investigated as a function of the concentrations, which were measured by X-ray diffraction and a piezometer. The results show that the d33 of Mg-Zr-doped AlN at total Mg and Zr concentrations (both expressed as β) of 0.35 was 280% larger than that of pure AlN. The experimentally measured parameter of the crystal structure and d33 of Mg-Zr-doped AlN (plotted as functions of total Mg and Zr concentrations) were in very close agreement with the corresponding values obtained by the first-principle calculations. Thin film bulk acoustic wave resonators (FBAR) employing (Mg,Zr)0.13Al0.87N and (Mg, Hf)0.13 Al0.87N as a piezoelectric thin film were fabricated, and their resonant characteristics were evaluated. The measured electromechanical coupling coefficient increased from 7.1% for pure AlN to 8.5% for Mg-Zr-doped AlN and 10.0% for Mg- Hf-doped AlN. These results indicate that co-doped (Mg, β)(x)Al(1-x)N (β = Zr or Hf) films have potential as piezoelectric thin films for wideband RF applications. PMID:26067035

  12. Solubility control in dilute magnetic semiconductors by using the co-doping method

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Fujii, Hitoshi; Bergqvist, Lars; Dederichs, Peter H.; Katayama-Yoshida, Hiroshi

    2009-03-01

    To overcome low solubility limit of magnetic impurities in dilute magnetic semiconductors (DMS) and realize room temperature ferromagnetism, we propose a co-doping method to increase solubility of magnetic impurities in DMS [1]. We calculate electronic structure of (Ga, Mn)As, (Ga, Mn)N, (Ga, Cr)N and (Zn, Cr)Te with interstitial impurities, such as Li, Na and Cu, from first-principles by using the Korringa-Kohn- Rostoker coherent potential approximation (KKR-CPA) method. From the total energy results, it is shown that the mixing energy of magnetic impurity becomes negative and the solubility of magnetic impurities is strongly enhanced under the existence of interstitials [1]. In general, the co-dopants compensate hole carriers, thus the system becomes paramagnetic. However, owing to the large diffusivity of these interstitial impurities, we can anneal out the co-dopants after the crystal growth to recover the ferromagnetism. As an example, kinetic Monte Carlo simulations for the diffusion of interstitial co-dopants in DMS will be shown. [1] K. Sato et al., Jpn. J. Appl. Phys. 46 L1120 (2007)

  13. Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure

    NASA Astrophysics Data System (ADS)

    Hou, Yong T.; Teo, Kie L.; Li, Ming Fu; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    1999-11-01

    Contactless electroreflectance (CER) of a GaN/InGaN/AlGaN multilayer structure grown on sapphire has been measured in the temperature range of 15K and 450K. Except for the GaN exciton structures, well-defined Franz-Keldysh Oscillations are observed above the AlGaN band gap. An electomodulational model based on complex Airy functions is used to analyze the FKOs line shape. The temperature dependence of transition energies is obtained both for GaN and AlGaN. The magnitude of the built in electric field in AlGaN layer is also determined. The temperature dependence of the electric field is found to be consistent with the variation of thermal strain in the epilayer. It is demonstrated that the built-in electric field can be identified to be due to the piezoelectric effect.

  14. White luminescence of Tm-Dy ions co-doped aluminoborosilicate glasses under UV light excitation

    SciTech Connect

    Liu Shimin; Zhao Gaoling; Lin Xiaohua; Ying Hao; Liu Junbo; Wang Jianxun; Han Gaorong

    2008-10-15

    Tm{sup 3+} and Dy{sup 3+} ions co-doped aluminoborosilicate glasses were prepared in this study. The luminescence properties of the glasses were analyzed. A combination of blue, green, yellow, and red emission bands was shown for these glasses, and white light emission could be observed under UV light excitation. White light luminescence color could be changed by varying the excitation wavelength. Concentration quenching effect was investigated in this paper. Furthermore, the dependence of luminescence properties on glass compositions was studied. Results showed that the luminescence intensity changed with different network modifier oxides, while the white color luminescence was not affected significantly. - Graphical abstract: Tm{sup 3+} and Dy{sup 3+} ions co-doped aluminoborosilicate glasses, which emit white light under UV light excitation, were prepared. The dependence of luminescence properties on glass compositions was studied, and results showed that the white color luminescence was not affected significantly with different network modifier oxides. This adjustability could broaden application areas.

  15. Thermoelectric performance of co-doped SnTe with resonant levels

    NASA Astrophysics Data System (ADS)

    Zhou, Min; Gibbs, Zachary M.; Wang, Heng; Han, Yemao; Li, Laifeng; Snyder, G. Jeffrey

    2016-07-01

    Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (nH) and extrinsic dopant concentration (NI, NAg) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured nH. Upon substituting extrinsic dopants beyond a certain amount, the nH changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300-773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.

  16. Optical and spectroscopic characterization of Er3+-Yb3+co-doped tellurite glasses and fibers

    NASA Astrophysics Data System (ADS)

    Narro-García, R.; Desirena, H.; Chillcce, E. F.; Barbosa, L. C.; Rodriguez, E.; De la Rosa, E.

    2014-04-01

    Optical and spectroscopic properties of Er3+-Yb3+ co-doped TeO2-WO3-Nb2O5-Na2O-Al2O3 glasses and fibers were investigated. Emission spectra and fluorescence lifetimes of 4I13/2 level of Er3+ion as a function of rare earth concentration and fiber length were measured in glasses. Results show that the self-absorption effect broadens the spectral bandwidth of 4I13/2→4I15/2 transition and lengthens the lifetime significantly from 3.5 to 4.6 ms. Fibers were fabricated by the rod-in-tube technique using a Heathway drawing tower. The emission power of these Er3+-Yb3+ co-doped Step Index Tellurite Fibers (SITFs; lengths varying from 2 to 60 cm) were generated by a 980 nm diode laser pump and then the emission power spectra were acquired with an OSA. The maximum emission power spectra, within the 1530-1560 nm region, were observed for fiber lengths ranging from 3 to 6 cm. The highest bandwidth obtained was 108 nm for 8 cm fiber length around 1.53 µm.

  17. The influence of Er, Ti co-doping on the multiferroic properties of BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Ma, Yinina; Xing, Wenyu; Chen, Jieyu; Bai, Yulong; Zhao, Shifeng; Zhang, Hao

    2016-02-01

    The pure and Er, Ti co-doped BiFeO3 thin films were prepared by chemistry solution deposition. Enhanced ferroelectric and ferromagnetic properties were obtained, which is mainly attributed to that the effect of co-doping Er and Ti leads to the drastic crystal structural transformation from rhombohedral phase to orthorhombic phase. Thus crystal structural transformation not only changes the switching behavior of the polarization path to improve the ferroelectric polarization, but also suppresses the original spiral spin structure to release the locked magnetization. At the same time, the leakage current density is decreased after doping Er3+ and Ti4+, which results from that the crystal structural transformation changes the leakage current mechanism. The present work provides an available way on improving the multiferroic properties of BiFeO3 thin films.

  18. Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

    PubMed

    Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

    2015-11-01

    Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process. PMID:26574093

  19. Bioinspired synthesis of nitrogen/sulfur co-doped graphene as an efficient electrocatalyst for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhang, Huanhuan; Liu, Xiangqian; He, Guangli; Zhang, Xiaoxing; Bao, Shujuan; Hu, Weihua

    2015-04-01

    Efficient electrocatalyst of oxygen reduction reaction (ORR) is crucial for a variety of renewable energy applications and heteroatom-doped carbon materials have demonstrated promising catalytic performance towards ORR. In this paper we report a bioinspired method to synthesize nitrogen/sulfur (N/S) co-doped graphene as an efficient ORR electrocatalyst via self-polymerization of polydopamine (PDA) thin layer on graphene oxide sheets, followed by reacting with cysteine and finally thermal annealing in Argon (Ar) atmosphere. As-prepared N/S co-doped graphene exhibits significantly enhanced ORR catalytic activity in alkaline solution compared with pristine graphene or N-doped graphene. It also displays long-term operation stability and strong tolerance to methanol poison effect, indicating it a promising ORR electrocatalyst.

  20. Preparation and characterization of zinc and copper co-doped WO3 nanoparticles: Application in photocatalysis and photobiology.

    PubMed

    Mohammadi, Sanaz; Sohrabi, Maryam; Golikand, Ahmad Nozad; Fakhri, Ali

    2016-08-01

    In this study, pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles samples were prepared by precipitation and co-precipitation methods. These nanoparticles were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDX), Dynamic light scattering (DLS), UV-visible and photoluminescence (PL) spectroscopy. The synthesized pure, Zn, Cu, Zn,Cu co-doped WO3 nanoparticles have smart optical properties and average sizes with 3.2, 3.12, 3.08 and 2.97eV of band-gap, 18.1, 23.2, 25.7 and 30.2nm, respectively. Photocatalytic activity of four nanoparticles was studying towards degradation of gentamicin antibiotic under ultraviolet and visible light irradiation. The result showed that Zn,Cu co-doped WO3 possessed high photocatalytic activity. The photocatalytic activity of WO3 nanoparticles could be remarkably increased by doping the Zn and Cu impurity. This can be attributed to the fact that the red shift of absorption edge and the trapping effect of the mono and co-doped WO3 nanoparticles. The research result presents a general and effective way to prepare different photocatalysts with enhanced visible and UV light-driven photocatalytic performance. Antibacterial activity of four different WO3 nanoparticles against Escherichia coli bacterium has been assessed by the agar disc method under light irradiation and dark medium. It is concluded from the present findings that WO3 nanoparticles can be used as an efficient antibacterial agent. PMID:27262854

  1. Growth and Characterization of Co-Doped Fluorine and Antimony in Tin Oxide Thin Films Obtained by Ultrasonic Spray Pyrolysis

    NASA Astrophysics Data System (ADS)

    Gaewdang, Thitinai; Wongcharoen, Ngamnit

    Fluorine (F)-doped, antimony (Sb)-doped, fluorine and antimony co-doped tin oxide (SnO2) thin films were prepared by ultrasonic spray pyrolysis technique using SnCl2, NH4F and SbCl3 as precursors of Sn, F and Sb elements respectively. F and Sb doping concentrations carried out from 1 to 20 wt% and 1 to 4 wt% in F-doped and Sb-doped SnO2 films respectively. In F and Sb co-doped SnO2 films, the proportions of F and Sb to Sn in starting solution were 15 and 2 wt% respectively. XRD patterns showed that the preferred orientation of SnO2:F, SnO2:Sb and SnO2:F, Sb is dependent on the doping concentration. The variation of doping concentration and preferred orientation of the films was reflected in their morphology as investigated by SEM. The electrical properties of the films were performed by Hall effect measurements in van der Pauw configuration. The minimum resistivity values of SnO2:F and SnO2:Sb were found in the films doped with 15 wt% of F and 2 wt% of Sb. However, The minimum of resistivity value of F and Sb co-doped SnO2 films is not better than neither the one of F-doped nor the one of Sb-doped SnO2 films. The optical transmission of SnO2:F films was found to increase with increasing in F doping concentration. Whereas the optical transmission of SnO2:Sb was found to decrease with increasing in Sb concentration. The F and Sb co-doped SnO2 films annealed in three different conditions at 500°C show the lower transmission values than the value obtained in the as-prepared SnO2:F, Sb films.

  2. Nitrogen and cobalt co-doped zinc oxide nanowires - Viable photoanodes for hydrogen generation via photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Patel, Prasad Prakash; Hanumantha, Prashanth Jampani; Velikokhatnyi, Oleg I.; Datta, Moni Kanchan; Hong, Daeho; Gattu, Bharat; Poston, James A.; Manivannan, Ayyakkannu; Kumta, Prashant N.

    2015-12-01

    Photoelectrochemical (PEC) water splitting has been considered as a promising and environmentally benign approach for efficient and economic hydrogen generation by utilization of solar energy. Development of semiconductor materials with low band gap, high photoelectrochemical activity and stability has been of particular interest for a viable PEC water splitting system. In this study, Co doped ZnO, .i.e., (Zn0.95Co0.05)O nanowires (NWs) was selected as the composition for further co-doping with nitrogen by comparing solar to hydrogen efficiency (SHE) of ZnO NWs with that of various compositions of (Zn1-xCox)O NWs (x = 0, 0.05, 0.1). Furthermore, nanostructured vertically aligned Co and N-doped ZnO, .i.e., (Zn1-xCox)O:N NWs (x = 0.05) have been studied as photoanodes for PEC water splitting. An optimal SHE of 1.39% the highest reported so far to the best of our knowledge for ZnO based photoanodes was obtained for the co-doped NWs, (Zn0.95Co0.05)O:N - 600 NWs generated at 600 °C in ammonia atmosphere. Further, (Zn0.95Co0.05)O:N-600 NWs exhibited excellent photoelectrochemical stability under illumination compared to pure ZnO NWs. These promising results suggest the potential of (Zn0.95Co0.05)O:N-600 NWs as a viable photoanode in PEC water splitting cell. Additionally, theoretical first principles study conducted explains the beneficial effects of Co and N co-doping on both, the electronic structure and the band gap of ZnO.

  3. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  4. Structural, Optical, and Magnetic Properties of Solution-Processed Co-Doped ZnS Thin Films

    NASA Astrophysics Data System (ADS)

    Goktas, A.; Mutlu, İ. H.

    2016-07-01

    Co-doped ZnS thin films have been grown on glass substrates using solution-processing and dip-coating techniques, and the impact of the Co doping level (0% to 5%) and film thickness on certain characteristics examined. X-ray diffraction study revealed that all the films possessed hexagonal crystal structure. Energy-dispersive x-ray analysis confirmed presence of Zn, Co, and S in the samples. Scanning electron microscopy showed that the film surface was homogeneous and dense with some cracks and spots. X-ray photoelectron spectroscopy confirmed introduction and integration of Co2+ ions into the ZnS thin films. Compared with undoped ZnS, optical studies indicated a reduction in optical bandgap energy (E g) while the refractive index (n), extinction coefficient (k), and dielectric constants (ɛ 1, ɛ 2) increased with film thickness (t) and Co doping level (except for 5%). Photoluminescence spectra showed enhanced luminescence intensity as the Co concentration was increased, while the dependence on t showed an initial increase followed by a decrease. The origin of the observed low-temperature (5 K and 100 K) ferromagnetic order may be related to point defects such as zinc vacancies, zinc interstitials, and sulfide vacancies or to the grain-boundary effect.

  5. Structural, optical, and ferromagnetic properties of Co-doped TiO2 films annealed in vacuum

    NASA Astrophysics Data System (ADS)

    Xu, Jianping; Shi, Shaobo; Li, Lan; Zhang, Xiaosong; Wang, Yaxin; Chen, Ximing; Wang, Jianfeng; Lv, Liya; Zhang, Fengming; Zhong, Wei

    2010-03-01

    Polycrystalline anatase Ti1-xCoxO2 (x =0-0.06) films have been fabricated by sol-gel spin coating. The effects of Co doping on the structural, optical, and magnetic properties are investigated. It is shown that oxygen vacancies and/or defects in the films are generated during thermal treatment in vacuum. Co doping reduces crystal quality and inhibits crystalline grain growth. Due to the introduction of Co, photoluminescence (PL) spectra become weak and the band gap emission has a blueshift. PL spectra reveal that the solubility of Co is lower than 0.02. At 300 K, the saturated magnetization is around 1.8 μB/Co, which is independent of the concentration of Co. This value is approximately equivalent to the average magnetic moment of bulk metallic cobalt (1.75 μB/Co). Zero-field-cooling/field-cooling measurements indicate that room temperature ferromagnetism in Co-doped TiO2 films is not an intrinsic property of the material. The presence of Co metal is identified by x-ray photoelectron spectroscopy and scanning electron microscopy.

  6. Selective substitution and tetragonality by Co-doping of dysprosium and thulium on dielectric properties of barium titanate ceramics

    NASA Astrophysics Data System (ADS)

    Kim, Jungdae; Kim, Dowan; Kim, Jinseong; Kim, Yong-Nam; Hui, K. N.; Lee, Heesoo

    2011-06-01

    Barium titanate (BaTiO3) ceramics co-doped with rare-earth elements were investigated in terms of selective substitution and tetragonality. The dielectrics were designed by addition of various Dy2O3 and Tm2O3 contents, for a total of 1 mol. % concentration, and analyzed in a temperature range from -55°C to 150°C. The dielectric constant of the 0.7 mol. % Dy2O3 and the 0.3 mol. % Tm2O3 co-doped BaTiO3 was 2250, which was about 27% higher than those of specimens doped with 1 mol. % Tm2O3 and 1 mol. % Dy2O3 at room temperature. The tendency of dielectric properties was verified through the changes of lattice parameters and binding energy. The substitution of Dy3+ led to a decrease of tetragonality and grain growth; however, amphoteric substitution caused by the co-doping of Dy2O3 and Tm2O3 compensated for those adverse effects. It can be concluded that the improvement of dielectric properties originated from the increase of the site substitution rate of Dy3+ and Tm3+ ions according to the ionic size the in rare-earth doped BaTiO3 system.

  7. Improving the ethanol gas-sensing properties of porous ZnO microspheres by Co doping

    SciTech Connect

    Xiao, Qi Wang, Tao

    2013-08-01

    Graphical abstract: - Highlights: • Co-doped porous ZnO microspheres were synthesized. • 3 mol% Co-doped ZnO sensor showed the highest response to ethanol. • 3 mol% Co-doped ZnO sensor exhibited fast recovery property. • 3 mol% Co-doped ZnO sensor exhibited good selectivity and long-term stability. - Abstract: Porous Co-doped ZnO microspheres were prepared by a simple hydrothermal method combined with post-annealing. Co species existed as a form of divalent state in the sample and substituted Zn{sup 2+} sites in ZnO crystal lattice, which was affirmed by X-ray diffraction, UV–vis diffuse reflectance spectroscopy and X-ray photoelectron spectroscopy. The gas-sensing measurements demonstrated that the 3 mol% Co-doped ZnO sample showed the highest response value to 100 ppm ethanol at 350 °C, which were 5 folds higher than that of the pure ZnO sample. In addition, the 3 mol% Co-doped ZnO sensor exhibited fast recovery property, good quantitative determination, good selectivity and long-term stability. The superior sensing properties were contributed to high specific surface area combined with the large amount of oxygen vacancies originating from Co doping.

  8. Synthesis and characterization of aluminum–boron co-doped ZnO nanostructures

    SciTech Connect

    Kumar, Vinod; Singh, R.G.; Singh, Neetu; Kapoor, Avinashi; Mehra, R.M.; Purohit, L.P.

    2013-02-15

    Graphical abstract: In this paper, we have reported the development of aluminum boron co-doped ZnO (AZB) nanostructures deposited by sol–gel method using spin coating technique. The structure of AZB nanostructure films has been found to exhibit the hexagonal wurtzite structure. The shape of nanostructures has been changed from seed structure to tetra-pods, tetra-pods to nanorods and finally nanorods to nanofiber with variation in Al concentration. The structural, electrical and optical properties of AZB nanostructures are tuned with shape and size of the nanostructures. The effect of Al concentration on the resistivity (ρ), carrier concentration (n) and mobility (μ) of nanostructure films is shown in graph below. A minimum resistivity of 6.8 × 10{sup −4} Ω cm is obtained in AZB films at doping concentration of B 0.6 at.% and Al 0.4 at.% with a sheet resistance of 24 Ω/□ and transmittance of ∼88% for nanorods structure. These nanostructures could be applicable for a various nano-regime devices such as photovolatics, gas sensing and field emission device. Display Omitted Highlights: ► Synthesis of Al and B co-doped ZnO (AZB) nanostructures. ► Minimum resistivity (ρ) of 6.8 × 10{sup −4} Ω cm in AZB films. ► Minimum sheet resistance (R{sub s}) 24 Ω/□ in nanorods (NRs). ► Maximum transmittance ∼88% in NRs. ► Application in nano-electronic devices. -- Abstract: In this paper, we have reported the development of aluminum boron co-doped ZnO (AZB) nanostructures deposited by sol–gel method using spin coating technique. The structure of AZB nanostructure films has been found to exhibit the hexagonal wurtzite structure. The shape of AZB nanostructures has changed from seed structure to tetra-pods, tetra-pods to nanorods and finally to nanofibers with increase in aluminum concentration. The structural, electrical and optical properties of AZB films are tuned with shape and size of the nanostructures. These AZB nanostructures could be

  9. Synthesis of SrAl2O4:Eu2+ phosphors co-doped with Dy3+, Tb3+, Si4+ and optimization of co-doping amount by response surface method

    NASA Astrophysics Data System (ADS)

    Wang, Huan; Liang, Xiaoping; Liu, Kai; Zhou, Qianqian; Chen, Peng; Wang, Jun; Li, Jianxin

    2016-03-01

    Dy3+ doped SrAl2O4:Eu2+ phosphors were synthesized by high temperature solid phase method in a weak reducing atmosphere (5% H2 + 95% N2). The relationship between the crushed granularity and the phosphors brightness was studied. The effect of co-doping amount of Dy3+, Tb3+ and Si4+ on the structure and properties of SrAl2O4:Eu2+ via response surface method was investigated. Photoluminescence measurement results showed that the initial afterglow brightness of 0.002 mol% Dy3+ doped SrAl2O4:Eu2+0.002 phosphors decreased after first increased within the sintering temperature range from 1150 to 1400 °C, which created the highest value of 12,101 mcd/m2 at 1300 °C. Numerous coarse particles in the powder ought to be crushed for the practical application, however, the brightness became lower accompanied by the decrease of the granularity. The luminescence property of SrAl2O4:Eu2+ sintered at 1200 °C improved by co-doping Dy3+-Tb3+-Si4+. The results of response surface method showed that the influence extent on the luminescence property was Dy3+ > Tb3+ > Si4+. When the co-doping amount in SrAl2O4:Eu2+0.002 phosphors of Dy3+, Tb3+ and Si4+ was 0.001 mol%, 0.0005 mol% and 0.002 mol%, respectively, the initial afterglow brightness of SrAl2O4 was up to the highest value of 12,231 mcd/m2, which was in good agreement on the predicted maximum value of 12,519 mcd/m2 with the optimum co-doping amount of 0.0015 mol% Dy3+, 0.0005 mol% Tb3+ and 0.0017 mol% Si4+. The brightness of co-doped phosphors not only increased by 56.79% than that of SrAl2O4:Eu2+0.002, Dy3+0.002 sintered at 1200 °C, but also was above that of 1300 °C. The emission spectra results showed that, compared with 0.001 mol% Dy3+ doped phosphor, the emission peak of 0.001 mol% Dy3+-0.001 mol% Tb3+ co-doped phosphor generated red shift and increased by 9.3% in emission intensity; 0.001 mol% Dy3+-0.004 mol% Si4+ and 0.001 mol% Dy3+-0.001 mol% Tb3+-0.004 mol% Si4+ co-doped SrAl2O4:Eu2+0.002 emission peak created blue

  10. Aqueous synthesis and characterization of Ni, Zn co-doped CdSe QDs

    NASA Astrophysics Data System (ADS)

    Thirugnanam, N.; Govindarajan, D.

    2016-01-01

    Ni, Zn co-doped CdSe quantum dots (QDs) were synthesized by chemical precipitation method through aqueous route. The prepared QDs were characterized by X-ray diffraction (XRD) technique, UV-Vis absorption spectroscopy, photoluminescence (PL) spectroscopy and high resolution transmission electron microscopy (HRTEM). XRD technique results indicate that the prepared samples have a zinc blende cubic phase. From UV-Vis absorption spectroscopy technique, the prepared samples were blue shifted with respect to their bulk counter part due to quantum confinement effect. Among different doping ratios examined, a maximum PL emission intensity was observed for CdSe:Ni(1 %):Zn(1 %) QDs. HRTEM pictures show that the prepared QDs were in spherical shape.

  11. Slow/fast light using a very short Er3+/Yb3+ co-doped fiber.

    PubMed

    Gan, Jiulin; Chen, Jiali; Xu, Shanhui; Yang, Zhongmin; Jiang, Zhonghong

    2013-03-01

    A slow/fast light device with a sealed size of 130 mm×30 mm×3 mm has been demonstrated. Ultraslow propagation and superluminal propagation with group velocity values from 8.4 to -14.7 m/s are observed in a 3.86 cm long Er3+/Yb3+ co-doped single-mode phosphate glass fiber. The dependence of pump power, modulation frequency, and wavelength on the slow/fast light effect in this fiber is investigated in detail. These results suggest that this compact slow/fast device is more suitable for all-fiber applications than those made by traditional methods. PMID:23455260

  12. Hydrothermal fabrication of multi-functional Eu3+ and Tb3+ co-doped BiPO4: Photocatalytic activity and tunable luminescence properties

    NASA Astrophysics Data System (ADS)

    Wang, Yao; Huang, Hongwei; Quan, Chaoming; Tian, Na; Zhang, Yihe

    2016-01-01

    We demonstrated for first time the tunable photoluminescence (PL) properties and photocatalytic activity of the Tb3+ and Eu3+ co-doped BiPO4 assemblies. They are fabricated via a facile hydrothermal approach. Through co-doping of Eu3+ and Tb3+ ions and changing the doping ratio, the emission color of the co-doped BiPO4 phosphors can be tuned precisely from green to yellow and red. Meanwhile, a very efficient energy transfer from Tb3+ to Eu3+ can be observed. Fascinatingly, a warmwhite color has been realized in the co-doped sample by tuning the ratio of Tb3+/Eu3+ to a certain value as displayed in the CIE chromaticity diagram. The doped BiPO4 samples also exhibit significantly enhanced photocatalytic activity compared to the pristine BiPO4 pertaining to Rhodamine (RhB) degradation under UV light. This enhancement should be attributed to the trapping electron effect induced by ion doping that endows BiPO4 with high separation of photoinduced electron-hole pairs, thereby greatly promoting the photocatalytic reactivity. It was corroborated by the electrochemical impedance spectra (EIS). Moreover, the crystal structure, microstructure and optical properties of as-prepared samples were investigated in details.

  13. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  14. Enhancement of luminescence emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor by Li{sup +} co-doping

    SciTech Connect

    Gavrilović, Tamara V.; Jovanović, Dragana J. Lojpur, Vesna M.; Đorđević, Vesna; Dramićanin, Miroslav D.

    2014-09-15

    This paper demonstrates the effects of Li{sup +} co-doping on the structure, morphology, and luminescence properties of GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} phosphor prepared using a high-temperature solid-state chemistry method. The GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} powders synthesized with the Li{sup +} co-dopant (in concentrations of 0, 5, 10, and 15 mol%) are characterized by X-ray powder diffraction, scanning electron microscopy, and photoluminescence spectroscopy. Structural analysis showed that powders co-doped with Li{sup +} have larger crystallite sizes and slightly smaller crystal lattice parameters than powders prepared without Li{sup +} ions. Photoluminescence down-conversion (345-nm excitation) and up-conversion (980-nm excitation) spectra show characteristic Er{sup 3+} emissions, with the most intense bands peaking at 525 nm ({sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} transition) and 552 nm ({sup 4}S{sub 3/2}→{sup 4}I{sub 15/2}). The intensity of up-conversion emission from GdVO{sub 4}:Er{sup 3+}/Yb{sup 3+} is enhanced (by a factor of four) by co-doping with 5 mol% of Li{sup +} ions. The mechanisms responsible for this emission enhancement are discussed. - Graphical abstract: UC emission spectra for GdVO{sub 4}:1.5-mol% Er{sup 3+}/20-mol% Yb{sup 3+} powders co-doped with different concentrations of Li{sup +} ions, recorded under 980-nm excitation. - Highlights: • 5-mol% Li{sup +} co-doped powders have 400% enhanced up-conversion emission intensity. • 15-mol% Li{sup +} co-doping produces 40% higher emission in down-conversion. • Li{sup +} co-doped powders have larger crystallite size and smaller lattice parameters.

  15. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect

    Hodges, C. Anaya Calvo, J.; Kuball, M.; Stoffels, S.; Marcon, D.

    2013-11-11

    AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  16. Tuning the metal-insulator transition via epitaxial strain and Co doping in NdNiO3 thin films grown by polymer-assisted deposition

    NASA Astrophysics Data System (ADS)

    Yao, Dan; Shi, Lei; Zhou, Shiming; Liu, Haifeng; Zhao, Jiyin; Li, Yang; Wang, Yang

    2016-01-01

    The epitaxial NdNi1-xCoxO3 (0 ≤ x ≤ 0.10) thin films on (001) LaAlO3 and (001) SrTiO3 substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO3 thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition. Furthermore, under the investigated Co-doping levels, the MI transition temperature (TMI) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.

  17. Improving the oxidation potential of Sb-doped SnO2 electrode by Zn/Sb co-doping

    NASA Astrophysics Data System (ADS)

    Chen, Aqing; Bin Li, Bin; Miljkovic, Bojan; Souza, Christina; Zhu, Kaigui; Ruda, Harry E.

    2014-07-01

    Inorganic oxides are recognized as attractive materials for developing anodes for wastewater treatment, potentially offering a cost effective solution for electro-oxidation. A key parameter in measuring the effectiveness of different anode materials is the oxygen over potential. In this paper, we study the role of Zn and Sb co-doping of SnO2 thin films to achieve enhanced oxidation potentials, suitable for use in wastewater treatment. The morphology, chemical, and electrochemical properties of the films were characterized, and as a result of an optimization study, suitable anode materials for wastewater treatment are identified.

  18. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  19. Effect of Fe and Co doping on electrical and thermal properties of La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}(Fe, Co){sub x}O{sub 3} manganites

    SciTech Connect

    Varshney, Dinesh; Mansuri, Irfan; Shaikh, M.W.; Kuo, Y.K.

    2013-11-15

    Graphical abstract: - Highlights: • Low temperature resistivity minimum contributes to Coulomb and Kondo scattering. • Metallic resistivity shows electron, magnon and phonon scattering are significant. • At high temperatures small polaron conduction mechanism is viable. • Susceptibility measurements show ferromagnetic–paramagnetic transition. - Abstract: The effect of Fe and Co doping on structural, electrical and thermal properties of half doped La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}(Fe, Co){sub x}O{sub 3} is investigated. The structure of these crystallizes in to orthorhombically distorted perovskite structure. The electrical resistivity of La{sub 0.5}Ce{sub 0.5}MnO{sub 3} exhibits metal-semiconductor transition (T{sub MS} at ∼225 K). However, La{sub 0.5}Ce{sub 0.5}Mn{sub 1−x}TM{sub x}O{sub 3} (TM = Fe, Co; 0.0 ≤ x ≤ 0.1) manganites show semiconducting behavior. The thermopower measurements infer hole as charge carriers and electron–magnon as well spin wave fluctuation mechanism are effective at low temperature domain and SPC model fits the observed data at high temperature. The magnetic susceptibility measurement confirms a transition from paramagnetic to ferromagnetic phase. The observed peaks in the specific heat measurements, shifts to lower temperatures and becomes progressively broader with doping of transition metals on Mn-site. The thermal conductivity is measured in the temperature range of 10–350 K with a magnitude in between 10 and 80 mW/cm K.

  20. Piezotronic Effect in Polarity-Controlled GaN Nanowires.

    PubMed

    Zhao, Zhenfu; Pu, Xiong; Han, Changbao; Du, Chunhua; Li, Linxuan; Jiang, Chunyan; Hu, Weiguo; Wang, Zhong Lin

    2015-08-25

    Using high-quality and polarity-controlled GaN nanowires (NWs), we studied the piezotronic effect in crystal orientation defined wurtzite structures. By applying a normal compressive force on c-plane GaN NWs with an atomic force microscopy tip, the Schottky barrier between the Pt tip and GaN can be effectively tuned by the piezotronic effect. In contrast, the normal compressive force cannot change the electron transport characteristics in m-plane GaN NWs whose piezoelectric polarization axis is turned in the transverse direction. This observation provided solid evidence for clarifying the difference between the piezotronic effect and the piezoresistive effect. We further demonstrated a high sensitivity of the m-plane GaN piezotronic transistor to collect the transverse force. The integration of c-plane GaN and m-plane GaN indicates an overall response to an external force in any direction. PMID:26256533

  1. All-inorganic colloidal silicon nanocrystals—surface modification by boron and phosphorus co-doping

    NASA Astrophysics Data System (ADS)

    Fujii, Minoru; Sugimoto, Hiroshi; Imakita, Kenji

    2016-07-01

    Si nanocrystals (Si-NCs) with extremely heavily B- and P-doped shells are developed and their structural and optical properties are studied. Unlike conventional Si-NCs without doping, B and P co-doped Si-NCs are dispersible in alcohol and water perfectly without any surface functionalization processes. The colloidal solution of co-doped Si-NCs is very stable and no precipitates are observed for more than 5 years. The co-doped colloidal Si-NCs exhibit size-controllable photoluminescence (PL) in a very wide energy range covering 0.85 to 1.85 eV. In this paper, we summarize the structural and optical properties of co-doped Si-NCs and demonstrate that they are a new type of environmentally-friendly nano-light emitter working in aqueous environments in the visible and near infrared (NIR) ranges.

  2. All-inorganic colloidal silicon nanocrystals-surface modification by boron and phosphorus co-doping.

    PubMed

    Fujii, Minoru; Sugimoto, Hiroshi; Imakita, Kenji

    2016-07-01

    Si nanocrystals (Si-NCs) with extremely heavily B- and P-doped shells are developed and their structural and optical properties are studied. Unlike conventional Si-NCs without doping, B and P co-doped Si-NCs are dispersible in alcohol and water perfectly without any surface functionalization processes. The colloidal solution of co-doped Si-NCs is very stable and no precipitates are observed for more than 5 years. The co-doped colloidal Si-NCs exhibit size-controllable photoluminescence (PL) in a very wide energy range covering 0.85 to 1.85 eV. In this paper, we summarize the structural and optical properties of co-doped Si-NCs and demonstrate that they are a new type of environmentally-friendly nano-light emitter working in aqueous environments in the visible and near infrared (NIR) ranges. PMID:27189818

  3. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    SciTech Connect

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-06-15

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L{sub 3,2} NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L{sub 3,2} edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles.

  4. Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaobo; Cheng, Tzu-Huan; Liu, Chee Wee

    2016-07-01

    The fluctuation of Ga content and absorption layer thickness of Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intracell Ga fluctuation degrades the open circuit voltage due to the minimum open circuit voltage in the parallel configuration, and also affects the short circuit current due to the Ga-dependent light absorption. The intercell Ga fluctuation leads to a more significant degradation for CIGS solar module efficiency than the intracell Ga fluctuation due to the additional degradation of the fill factor. The thickness fluctuation has a small effect on open circuit voltage, but causes strong degradation of short circuit current and fill factor, which leads to a more significant degradation on power conversion efficiency than Ga fluctuation to the same fluctuation percentage. In reality, the thickness can be tightly controlled within the fluctuation of 5% or less. [Figure not available: see fulltext.

  5. Luminescence characteristics of ZnS nanoparticles co-doped with Ni 2+ and Mn 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xu, Dong; Yuan, Duorong; Song, Chunfeng; Liu, Suwen; Cheng, Xiufeng

    2003-12-01

    ZnS nanoparticles doped with Ni 2+ and Mn 2+ have been prepared by co-precipitation from homogeneous solutions of Zn, Ni and Mn salt compounds, with S 2- as precipitating anion formed by decomposition of thioacetamide (TAA). X-ray diffraction analysis shows that the average crystalline particle size of the doped and undoped ZnS nanometer scale samples is about 2-4 nm. A novel luminescent property has been observed in the photoluminescence (PL) spectra of the ZnS nanoparticles co-doped with Ni 2+ and Mn 2+. The ZnS nanoparticles can be doped with Ni 2+ and Mn 2+ during synthesis without altering the X-ray diffraction pattern. However, the emission wavelengths (with a color range from blue to green, λem=475-540 nm) and PL intensities of the co-doped samples vary with changing the impurity mole ratios of Ni 2+ and Mn 2+ in the co-doped samples. When the mole ratios of Ni 2+ and Mn 2+ in the co-doped sample are 0.3% and 2.0%, respectively, the relative fluorescence intensity of the co-doped samples is about four times of that of un-doped ZnS nanocrystals. The PL properties of the co-doped samples are dramatically different from those of Ni 2+- and Mn 2+-doped ZnS nanocrystals.

  6. Soft x-ray absorption spectroscopy on Co doped ZnO: structural distortions and electronic structure

    NASA Astrophysics Data System (ADS)

    Kowalik, I. A.; Guziewicz, E.; Godlewski, M.; Arvanitis, D.

    2016-05-01

    We present soft x-ray absorption spectra from a series of Co doped ZnO films. We discuss systematic variations of the Co L-edge white line intensity and multiplet features for this series of samples. We document sizeable differences in the electronic state of the Co ionic cores, as well as in the local environment of the host lattice atoms, characterised by means of x-ray absorption spectra at the O K-edge and Zn L-edges. Model calculations allow to correlate the observed effects to small structural distortions of the ZnO lattice.

  7. Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Hatke, A. T.; Zudov, M. A.; Watson, J. D.; Manfra, M. J.; Pfeiffer, L. N.; West, K. W.

    2013-08-01

    We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

  8. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  9. Evidence for effective mass reduction in GaAs/AlGaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Hatke, A. T.; Zudov, M. A.; Watson, J. D.; Manfra, M. J.; Pfeiffer, L. N.; West, K. W.

    2013-04-01

    We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. Surprisingly, the effective mass, obtained from the period of microwave-induced resistance oscillations, is found to be about 12% lower than the band mass in GaAs, mb. This finding provides strong evidence for electron-electron interactions which can be probed by microwave photoresistance in very high Landau levels. In contrast, the measured magnetoplasmon dispersion revealed an effective mass which is close to mb, in accord with previous studies.

  10. Simultaneous enhancement of magnetic and ferroelectric properties in Dy and Cr co-doped BiFeO3 nanoparticles.

    PubMed

    Mao, Weiwei; Wang, Xingfu; Chu, Liang; Zhu, Yiyi; Wang, Qi; Zhang, Jian; Yang, Jianping; Li, Xing'ao; Huang, Wei

    2016-03-01

    Multiferroic BiFeO3 (BFO), Bi0.95Dy0.05FeO3 and Bi0.95Dy0.05Fe0.95Cr0.05O3 samples were successfully synthesized by a carbon microsphere-assisted sol-gel (CSG) method. X-ray diffraction analysis confirmed a lattice distortion from a rhombohedral structure to a tetragonal structure upon doping Dy and Cr in BFO. The morphology of BFO and doped BFO could be effectively controlled to form nanoparticles, due to the nucleation sites of the carbon microspheres. The co-doping of Dy and Cr in BFO had a significant improvement effect on the magnetic properties, with the remnant magnetization being 0.557 emu g(-1), due to the structural phase transition, size effects and the strong ferromagnetic interaction between Fe(3+)-O-Cr(3+) ions arising from Cr substitution. Meanwhile, the doping of Dy into BFO effectively reduced the leakage current and enhanced the ferroelectric properties. The simultaneous enhancement of magnetic and ferroelectric properties shows the great potential application of Dy- and Cr-co-doped BFO in future multifunctional devices. PMID:26862599

  11. Effect of doping (C or N) and co-doping (C+N) on the photoactive properties of magnetron sputtered titania coatings for the application of solar water-splitting.

    PubMed

    Rahman, M; Dang, B H Q; McDonnell, K; MacElroy, J M D; Dowling, D P

    2012-06-01

    The photocatalytic splitting of water into hydrogen and oxygen using a photoelectrochemical (PEC) cell containing titanium dioxide (TiO2) photoanode is a potentially renewable source of chemical fuels. However, the size of the band gap (-3.2 eV) of the TiO2 photocatalyst leads to its relatively low photoactivity toward visible light in a PEC cell. The development of materials with smaller band gaps of approximately 2.4 eV is therefore necessary to operate PEC cells efficiently. This study investigates the effect of dopant (C or N) and co-dopant (C+N) on the physical, structural and photoactivity of TiO2 nano thick coating. TiO2 nano-thick coatings were deposited using a closed field DC reactive magnetron sputtering technique, from titanium target in argon plasma with trace addition of oxygen. In order to study the influence of doping such as C, N and C+N inclusions in the TiO2 coatings, trace levels of CO2 or N2 or CO2+N2 gas were introduced into the deposition chamber respectively. The properties of the deposited nano-coatings were determined using Spectroscopic Ellipsometry, SEM, AFM, Optical profilometry, XPS, Raman, X-ray diffraction UV-Vis spectroscopy and tri-electrode potentiostat measurements. Coating growth rate, structure, surface morphology and roughness were found to be significantly influenced by the types and amount of doping. Substitutional type of doping in all doped sample were confirmed by XPS. UV-vis measurement confirmed that doping (especially for C doped sample) facilitate photoactivity of sputtered deposited titania coating toward visible light by reducing bandgap. The photocurrent density (indirect indication of water splitting performance) of the C-doped photoanode was approximately 26% higher in comparison with un-doped photoanode. However, coating doped with nitrogen (N or N+C) does not exhibit good performance in the photoelectrochemical cell due to their higher charge recombination properties. PMID:22905523

  12. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    SciTech Connect

    Santos, Daniel A.A.; Zeng, Hao; Macêdo, Marcelo A.

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  13. Near-infrared multi-wavelengths long persistent luminescence of Nd3+ ion through persistent energy transfer in Ce3+, Cr3+ co-doped Y3Al2Ga3O12 for the first and second bio-imaging windows

    NASA Astrophysics Data System (ADS)

    Xu, Jian; Tanabe, Setsuhisa; Sontakke, Atul D.; Ueda, Jumpei

    2015-08-01

    We developed a persistent phosphor of Y3Al2Ga3O12 doped with Nd3+, Ce3+, Cr3+ ions (YAGG:Nd-Ce-Cr) exhibiting long (>10 h) persistent luminescence at multi-wavelengths of around 880, 1064, and 1335 nm due to f-f transitions of Nd3+ and at 505 nm due to Ce3+:5d1→4f transition. The intense near-infrared (NIR) persistent luminescence bands from Nd3+ match well with the first (650-950 nm) and second (1000-1400 nm) bio-imaging windows. The NIR persistent radiance of the YAGG:Nd-Ce-Cr phosphor (0.33 × 10-1 mW/Sr/m2) at 60 min after ceasing blue light illumination was over 2 times higher than that of the widely used ZnGa2O4:Cr3+ red persistent phosphor (0.15 × 10-1 mW/Sr/m2).

  14. Ce(3+) /Tb(3+) non-/single-/co-doped K-Lu-F materials: synthesis, optical properties, and energy transfer.

    PubMed

    Cao, Chunyan; Xie, An; Noh, Hyeon Mi; Jeong, Jung Hyun

    2016-08-01

    Using a hydrothermal method, Ce(3+) /Tb(3+) non-/single-/co-doped K-Lu-F materials have been synthesized. The X-ray diffraction (XRD) results suggest that the Ce(3+) and/or Tb(3+) doping had great effects on the crystalline phases of the final samples. The field emission scanning electron microscopy (FE-SEM) images indicated that the samples were in hexagonal disk or polyhedron morphologies in addition to some nanoparticles, which also indicated that the doping also had great effects on the sizes and the morphologies of the samples. The energy-dispersive spectroscopy (EDS) patterns illustrated the constituents of different samples. The enhanced emissions of Tb(3+) were observed in the Ce(3+) /Tb(3+) co-doped K-Lu-F materials. The energy transfer (ET) efficiency ηT were calculated based on the fluorescence yield. The ET mechanism from Ce(3+) to Tb(3+) was confirmed to be the dipole-quadrupole interaction inferred from the theoretical analysis and the experimental data. Copyright © 2015 John Wiley & Sons, Ltd. PMID:26669301

  15. Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

    NASA Astrophysics Data System (ADS)

    Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

    2015-06-01

    Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF6 crystal. Eu doped and Eu, Y co-doped LiCaAlF6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

  16. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  17. Photoluminescence, ellipsometric, optical and morphological studies of sprayed Co-doped ZnO films

    NASA Astrophysics Data System (ADS)

    Gençyılmaz, O.; Atay, F.; Akyüz, I.

    2016-06-01

    In this study, undoped and cobalt (Co)-doped zinc oxide (ZnO) films were successfully produced by ultrasonic spray pyrolysis (USP) technique at low temperature (350°C). The optical and surface properties were investigated as a function of Co content. The optical parameters (thickness, refractive index and extinction coefficient) were determined using spectroscopic ellipsometry (SE) and it was seen that the refractive index and extinction coefficient values of Co-doped ZnO films decreased slightly depending on the increasing of Co doping. For investigation, the transmittance and photoluminescence (PL) spectra of the films, UV-Vis spectrophotometer and PL spectroscopy were used at room temperature. The transmittance spectra show that transmittance values decreased and Co+2 ions substitute Zn+2 ions of ZnO lattice. The optical band gap values decreased from 3.26 eV to 2.85 eV with the changing of Co content. The results of PL spectra exhibit the position of the different emission peaks unchanged but the intensity of peaks increased with increasing Co doping. Also, the surface properties of the films were obtained by atomic force microscopy (AFM) and these results indicated that the surface morphology and roughness values were prominently changed with Co doping.

  18. Enhanced electrical properties in multiferroic BiFeO3 ceramics co-doped by La3+ and V5+

    NASA Astrophysics Data System (ADS)

    Yu, Benfang; Li, Meiya; Wang, Jing; Pei, Ling; Guo, Dongyun; Zhao, Xingzhong

    2008-09-01

    La3+ and V5+ co-doped Bi0.85La0.15Fe1-xVxO3 (BLFVx, x = 0-0.1) ceramics were prepared by a rapid liquid sintering technique. The effects of the V5+-doping content on the structure and electrical properties of BLFVx ceramics were investigated. In the range of the V5+ content x from 0 to 0.03, BLFVx ceramics had a polycrystalline perovskite structure with tiny residual Bi2O3, while an impurity phase appeared for x > 0.03. As the x increased from 0 to 0.1, both the leakage current density and the dielectric loss (tan δ) for BLFVx ceramics decreased gradually, while the dielectric constant (ɛr) first increased and then decreased gradually in this process, reaching a maximum value of 273 for x = 0.03. Among the BLFVx ceramics, the BLFVx=0.01 ceramic showed a well-saturated hysteresis loop with large remanent polarization (Pr) of 39.4 µC cm-2 and a low coercive electric field (Ec) of ±43.1 kV cm-1 under an applied electric field of ±75 kV cm-1. In addition, these ceramics exhibited good anti-fatigue characteristics after 2 × 1010 read/write polarization cycles. These suggested that La3+ and V5+ co-doping was beneficial for enhancing the dielectric, ferroelectric and anti-fatigue properties of the BLFVx ceramics.

  19. Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects

    SciTech Connect

    Tang, Kun Gu, Ran; Gu, Shulin Ye, Jiandong; Zhu, Shunming; Yao, Zhengrong; Xu, Zhonghua; Zheng, Youdou

    2015-04-07

    In this article, the authors have conducted an extensive investigation on the roles of intrinsic zinc defects by annealing of a batch of Te-N co-doped ZnO films. The formation and annihilation of Zn interstitial (Zn{sub i}) clusters have been found in samples with different annealing temperatures. Electrical and Raman measurements have shown that the Zn{sub i} clusters are a significant compensation source to holes, and the Te co-doping has a notable effect on suppressing the Zn{sub i} clusters. Meanwhile, shallow acceptors have been identified in photoluminescence spectra. The N{sub O}-Zn-Te complex, zinc vacancy (V{sub Zn})-N{sub O} complex, and V{sub Zn} clusters are thought to be the candidates as the shallow acceptors. The evolution of shallow acceptors upon annealing temperature have been also studied. The clustering of V{sub Zn} at high annealing temperature is proposed to be a possible candidate as a stable acceptor in ZnO.

  20. Structural and optical properties of highly crystalline Ce, Eu and co-doped ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Murugadoss, G.; Jayavel, R.; Rajesh Kumar, M.

    2015-06-01

    Different concentrations of europium (Eu), cerium (Ce) doped and co-doped ZnO:Eu (1%), Ce (1%) nanorods were successfully synthesized by chemical method using Polyvinylpyrrolidone as a surfactant. Crystalline phase, morphology, functional groups, optical absorption, emission and thermal properties of prepared samples were investigated by X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), Scanning electron microscopy (SEM), High-resolution transmission electron microscopy (HR-TEM), Fourier transform infra-red (FT-IR), UV-visible, Photoluminescence (PL) spectrophotometer and thermogravimetry (TG) and differential thermal analysis (DTA) analysis. The XRD study showed high crystalline nature of the products with nanoscale regime. Optical study showed shifting the absorption and emission spectra toward higher wavelength side when increasing the doping concentrations. Mainly, this is first time observed a red emission peak at 660 nm for Ce (3%) doped ZnO. Additionally, co-doped ZnO:Eu (1%), Ce (1%) nanorods were synthesized and studied their optical properties. This work demonstrates that simply modified their optical absorption and emission of ZnO by introducing rare earth ions can be used as an effective electrode material in solar cell applications, optoelectronic devices and photocatalysis analysis.

  1. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    NASA Astrophysics Data System (ADS)

    He, Xiao-Ming; Hakovirta, M.; Peters, A. M.; Taylor, B.; Nastasi, M.

    2002-05-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C2H2), diborane (B2H6), and hexafluoroethane (C2F6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C2H2, B2H6, and C2F6 source gases. The incorporation of B2H6 and C2F6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition resulted in the formation of films that possessed a reduced hydrogen concentration and stress, while maintaining a high hardness, low friction coefficient, and high wetting contact angle.

  2. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    DOE PAGESBeta

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/Smore » co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.« less

  3. Investigation of structural and optical properties of ZnO films co-doped with fluorine and indium

    NASA Astrophysics Data System (ADS)

    Keskenler, E. F.; Turgut, G.; Doğan, S.

    2012-07-01

    Undoped ZnO film and ZnO films, which are co-doped with F and In (FIZO) at different concentrations, were synthesized by sol-gel technique and the effects of co-doping of F and In on structural and optical properties of ZnO thin films were investigated. The concentration ratio of [F]/[Zn] was altered from 0.25 to 1.75 with 0.50 step at.% mole and [In]/[Zn] was altered from 0.25 to 1.00 with 0.25 step at.% mole. X-ray diffraction analysis indicates that the films have polycrystalline nature and the (0 0 2) preferred orientation is the stronger peak. No extra phases involving zinc, fluorine and indium compounds were observed even at high F and In content. The grain size of undoped ZnO and FIZO thin films varied between 15 and 20 nm with a small fluctuation. From the SEM images, although the undoped ZnO had a smooth and particle-shaped surface, FIZO films had nanofiber-networks shapes over the surface with average size of 500 nm. The surface morphologies and crystallite sizes for the F and In doped films were slightly different from than those of undoped film. From the optical study, a slight shrinkage of band gap was backwardly observed from 3.36 to 3.25 eV with the increasing of F and In content.

  4. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor. PMID:26436325

  5. Enhanced rate performance of LiFePO4/C by co-doping titanium and vanadium

    NASA Astrophysics Data System (ADS)

    Long, Yun-Fei; Su, Jing; Cui, Xiao-Ru; Lv, Xiao-Yan; Wen, Yan-Xuan

    2015-10-01

    V and Ti co-doped LiFePO4/C composites were synthesized by a wet milling assisted carbothermal reduction technology. The structure, morphology and electrochemical performance of the samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), magnetic susceptibility, positron annihilation lifetime spectra (PAS), scanning electron microscope (SEM), charge/discharge tests, electrochemical impedance spectroscopy (EIS) and cyclic voltammograms (CV). The results showed that the V and Ti co-doped samples kept the olivine structure of LiFePO4, but the synergistic effects between V3+ and Ti4+ in the lattice can increase the disorder degree of the lattice and create Li+ vacancies in LiFePO4/C, thus improve electronic conductivity and Li+ diffusion coefficient. LiV0.069Ti0.025Fe0.905PO4/C delivers an initial discharge capacity of 144.1 mAh g-1 with a capacity retention ratio of 99.4%, 96.3% and 93.6% after 100, 200 and 300 cycles at 10C, respectively. Remarkably, it still gives a high discharge capacity of 124.8 mAh g-1 even at a high rate of 20C.

  6. Synergistic enhancement of nitrogen and sulfur co-doped graphene with carbon nanospheres insertion for electrocatalytic oxygen reduction reaction

    SciTech Connect

    Wu, Min; Xin, Huolin L.; Wang, Jie; Wu, Zexing; Wang, Deli

    2015-03-13

    A nitrogen and sulfur co-doped graphene/carbon black (NSGCB) nanocomposite for the oxygen reduction reaction (ORR) was synthesized through a one-pot annealing of a precursor mixture containing graphene oxide, thiourea, and acidized carbon black (CB). The NSGCB showed excellent performance for the ORR with the onset and half-way potentials at 0.96 V and 0.81 V (vs. RHE), respectively. It is significantly improved over that of the catalysts derived from only graphene (0.90 V and 0.76 V) or carbon nanosphere (0.82 V and 0.74 V). The enhanced catalytic activity on the NSGCB electrode could be attributed to the synergistic effect of N/S co-doping and the enlarged interlayer space resulted from the insertion of carbon nanosphere into the graphene sheets. The four-electron selectivity and the limiting current density of the NSGCB nanocomposite are comparable to that of the commercially Pt/C catalyst. Furthermore, the NSGCB nanocomposite was superior to Pt/C in terms of long-term durability and tolerance to methanol poisoning.

  7. The effect of seeds on GA metabolism in pea pericarp

    SciTech Connect

    Ozga, J.A.; Brenner, M.L. )

    1990-05-01

    To determine the effect of seeds on GA metabolism in pea (Pisum sativum) pericarp tissue, a method was developed that allowed access to the seeds while maintaining pericarp growth. Pericarp tissue of ovaries (3 DAA) was split down the across from the seeds, and seeds were removed. After 24 h. ({sup 14}C)-GA{sub 12} was applied to the inside surface of the pericarp of opened ovaries with or without seeds and to intact ovaries (control). Pericarp tissue was harvested 24 h after ({sup 14}C)-GA{sub 12} application, extracted and chromatographed on C18 HPLC. Wounding (opening ovaries) reduced accumulation of ({sup 14}C)-GA{sub 20}. Notably, removal of seeds significantly decreased ({sup 14}C)-GA{sub 20} accumulation when compared to the wounded controls. ({sup 14}C)-GA{sub 53} was present int he highest amount in the control ovaries attached to the plant, 1.5 {plus minus} 1.0% was found in opened ovaries with seeds and none was detected in ovaries without seeds. Metabolism of ({sup 14}C)-GA{sub 12} was similar in ovaries attached or removed from the plant. Application of GA{sub 3} (2.5 {mu}g/ml) to the ovaries in each treatment did not affect ({sup 14}C)-GA{sub 12} metabolism. These results suggest that the presence of seeds may stimulate GA metabolism in the pericarp.

  8. Sulfur and nitrogen co-doped, few-layered graphene oxide as a highly efficient electrocatalyst for the oxygen-reduction reaction.

    PubMed

    Xu, Jiaoxing; Dong, Guofa; Jin, Chuanhong; Huang, Meihua; Guan, Lunhui

    2013-03-01

    S and N co-doped, few-layered graphene oxide is synthesized by using pyrimidine and thiophene as precursors for the application of the oxygen reduction reaction (ORR). The dual-doped catalyst with pyrrolic/graphitic N-dominant structures exhibits competitive catalytic activity (10.0 mA cm(-2) kinetic-limiting current density at -0.25 V) that is superior to that for mono N-doped carbon nanomaterials. This is because of a synergetic effect of N and S co-doping. Furthermore, the dual-doped catalyst also shows an efficient four-electron-dominant ORR process, which has excellent methanol tolerance and improved durability in comparison to commercial Pt/C catalysts. PMID:23404829

  9. Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor

    NASA Astrophysics Data System (ADS)

    Lew, K. L.; Yoon, S. F.

    2003-01-01

    A series of experiments and calculations has been carried out to study the effect of different composite collector designs on InGaP/GaAs/InGaP double heterojunction bipolar transistor breakdown characteristics. A comparison between uncorrected and dead-space corrected models was carried out, and it was found that the dead-space effect is dominant for collector thickness below 300 nm. However, this effect can be neglected for collector thickness larger than 500 nm. The role of lightly doped GaAs (n--GaAs) and heavily doped InGaP (N+-InGaP) spacer layers is discussed systematically to establish a criterion for designing the composite collector structure. The experimental and theoretical results show that it is necessary to keep the sum of n--GaAs and N+-InGaP spacer layer thickness below 50 nm to avoid significant degradation of the device breakdown characteristics.

  10. Ferromagnetism and Conductivity in Hydrogen Irradiated Co-Doped ZnO Thin Films.

    PubMed

    Di Trolio, A; Alippi, P; Bauer, E M; Ciatto, G; Chu, M H; Varvaro, G; Polimeni, A; Capizzi, M; Valentini, M; Bobba, F; Di Giorgio, C; Amore Bonapasta, A

    2016-05-25

    Impressive changes in the transport and ferromagnetic properties of Co-doped ZnO thin films have been obtained by postgrowth hydrogen irradiation at temperatures of 400 °C. Hydrogen incorporation increases the saturation magnetization by one order of magnitude (up to ∼1.50 μB/Co) and increases the carrier density and mobility by about a factor of two. In addition to the magnetic characterization, the transport and structural properties of hydrogenated ZnO:Co have been investigated by Hall effect, local probe conductivity measurements, micro-Raman, and X-ray absorption spectroscopy. Particular care has been given to the detection of Co oxides and metal Co nanophases, whose influence on the increase in the transport and ferromagnetic properties can be excluded on the ground of the achieved results. The enhancement in ferromagnetism is directly related to the dose of H introduced in the samples. On the contrary, despite the shallow donor character of H atoms, the increase in carrier density n is not related to the H dose. These apparently contradictory effects of H are fully accounted for by a mechanism based on a theoretical model involving Co-VO (Co-O vacancy) pairs. PMID:27123761

  11. Structural and photoluminescence properties of Cd and Cu co-doped zinc oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Samuel, T.; Sujatha, K.; Rao, K. Ramachandra; Rao, M. C.

    2016-05-01

    Cd and Cu co-doped ZnO nanoparticles were synthesized by Polyol method and subsequently have been characterized by their structure, optical and photoluminescence studies. XRD and PSA results revealed the formation of Cd and Cu co-doped ZnO nanoparticles with an average crystallite size of 50 nm and average particle size of 246 nm. From Zeta Potential measurements the Zeta Potential was found to be - 29.2 eV indicating the stability of prepared nanoparticles. From Uv-Vis studies, it is found that the absorption of undoped ZnO is less compared with Cd and Cu co-doped ZnO and the absorbance increases with increase in dopant concentration. Photoluminescence studies revealed that the samples are with high structural and optical quality.

  12. Charge Compensated (Al, N) Co-Doped Zinc Oxide (ZnO) Films for Photlelectrochemical Application

    SciTech Connect

    Shet, S.

    2012-01-01

    ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100oC. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor co-doping could be a potential method for bandgap reduction of wide-bandgap oxide materials to improve their photoelectrochemical performance.

  13. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  14. Phosphorus/sulfur Co-doped porous carbon with enhanced specific capacitance for supercapacitor and improved catalytic activity for oxygen reduction reaction

    NASA Astrophysics Data System (ADS)

    Zhou, Yao; Ma, Ruguang; Candelaria, Stephanie L.; Wang, Jiacheng; Liu, Qian; Uchaker, Evan; Li, Pengxi; Chen, Yongfang; Cao, Guozhong

    2016-05-01

    Phosphorus (P)/sulfur (S) co-doped porous carbon derived from resorcinol and furaldehyde are synthesized through one-step sol-gel processing with the addition of phosphorus pentasulfide as P and S source followed with freeze-drying and pyrolysis in nitrogen. The P/S co-doping strategy facilitates the pore size widening both in micropore and mesopore regions, together with the positive effect on the degree of graphitization of porous carbon through elimination of amorphous carbon through the formation and evaporation of carbon disulfide. As an electrode for supercapacitor application, P/S co-doped porous carbon demonstrates 43.5% improvement on specific capacitance of the single electrode compared to pristine porous carbon in organic electrolyte at a current of 0.5 mA due to the P-induced pseudocapacitive reactions. As for electrocatalytic use, promoted electrocatalytic activity and high resistance to crossover effects of oxygen reduction reaction (ORR) in alkaline media are observed after the introduction of P and S into porous carbon. After air activation, the specific capacitance of the single electrode of sample PS-pC reaches up to 103.5 F g-1 and an improved oxygen reduction current density.

  15. Origin of resolution enhancement by co-doping of scintillators: Insight from electronic structure calculations

    SciTech Connect

    Åberg, Daniel Sadigh, Babak; Schleife, André; Erhart, Paul

    2014-05-26

    It was recently shown that the energy resolution of Ce-doped LaBr{sub 3} scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here, we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that (i) Br vacancies are the primary electron traps during the initial stage of thermalization of hot carriers, prior to hole capture by Ce dopants; (ii) isolated Br vacancies are associated with deep levels; (iii) Sr doping increases the Br vacancy concentration by several orders of magnitude; (iv) Sr{sub La} binds to V{sub Br} resulting in a stable neutral complex; and (v) association with Sr causes the deep vacancy level to move toward the conduction band edge. The latter is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from Sr{sub La}–V{sub Br} complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon.

  16. Visible-Light-Induced Bactericidal Activity of Titanium Dioxide Co-doped with Nitrogen and Silver

    PubMed Central

    Wu, Pinggui; Xie, Rongcai; Imlay, Kari; Shang, Jian-Ku

    2011-01-01

    Titanium dioxide nanoparticles co-doped with nitrogen and silver (Ag2O/TiON) were synthesized by the sol-gel process and found to be an effective visible light driven photocatalyst. The catalyst showed strong bactericidal activity against Escherichia coli (E. coli) under visible light irradiation (λ> 400 nm). In x-ray photoelectron spectroscopy and x-ray diffraction characterization of the samples, the as-added Ag species mainly exist as Ag2O. Spin trapping EPR study showed Ag addition greatly enhanced the production of hydroxyl radicals (•OH) under visible light irradiation. The results indicate that the Ag2O species trapped eCB− in the process of Ag2O/TiON photocatalytic reaction, thus inhibiting the recombination of eCB− and hVB+ in agreement with the stronger photocatalytic bactericidal activity of Ag2O/TiON. The killing mechanism of Ag2O/TiON under visible light irradiation is shown to be related to oxidative damages in the forms of cell wall thinning and cell disconfiguration. PMID:20726520

  17. Combinatorial optimization of La, Ce-co-doped pyrosilicate phosphors as potential scintillator materials.

    PubMed

    Wei, Qinhua; Wan, Jieqiong; Liu, Guanghui; Zhou, Zhenzhen; Yang, Hua; Wang, Jiacheng; Liu, Qian

    2015-04-13

    A combinatorial method was employed to rapidly screen the effects of La, Ce-co-doping on the luminescent properties of Gd2Si2O7 pyrosilicate using an 8 × 8 library. The candidate formulations (Gd1-x-yLax)2Si2O7:Ce2y were evaluated by luminescence pictures under ultraviolet excitation. The optimal composition was found to be (Gd0.89La0.1)2Si2O7:Ce0.02 after scaled-up preparation and detailed characterization of powder samples, which shows an excellent light output under both ultraviolet and X-ray excitation (about 5.43 times of commercial YAG:Ce powders). The XRD results indicate that the phase structure sequence is tetragonal-orthorhombic-triclinic for different calcination temperatures and doping ions. The (Gd0.89La0.1)2Si2O7:Ce0.02 powder sample also demonstrated excellent temperature stability of luminescence up to 200 °C and a short decay time of several tens of nanoseconds, suggesting that this may represent a new kind of scintillation material, such as single crystals, ceramics, glass, or phosphors. PMID:25679047

  18. A first-principles study of co-doping in lanthanum bromide

    NASA Astrophysics Data System (ADS)

    Aberg, Daniel; Sadigh, Babak; Schleife, Andre; Erhart, Paul

    2015-03-01

    It was recently shown that the energy resolution of Ce-doped LaBr3 scintillator radiation detectors can be crucially improved by co-doping with Sr, Ca, or Ba. Here we outline a mechanism for this enhancement on the basis of electronic structure calculations. We show that Sr dopants create and bind to Br vacancies, resulting in stable neutral complexes. The association with Sr causes the deep vacancy level to move toward the conduction band edge. This is essential for reducing the effective carrier density available for Auger quenching during thermalization of hot carriers. Subsequent de-trapping of electrons from the complexes can activate Ce dopants that have previously captured a hole leading to luminescence. This mechanism implies an overall reduction of Auger quenching of free carriers, which is expected to improve the linearity of the photon light yield with respect to the energy of incident electron or photon. Optical properties of the Ce-Sr-vacancy triple complex are discussed and compared to experiment. Prepared by LLNL under Contract DE-AC52-07NA27344. Support from the National Nuclear Security Administration Office of Nonproliferation Research and Development (NA-22) is acknowledged.

  19. Ni, Fe Co-doped ZnO nanoparticles synthesized by solution combustion method

    SciTech Connect

    Dhiman, Pooja Chand, Jagdish Verma, S. Sarveena, Singh, M.

    2014-04-24

    This paper outlines the synthesis and characterization of Ni-Fe co-doped ZnO nanoparticles by facile solution combustion method. The structural characterization by XRD confirmed the phase purity of the samples. Surface morphology studied by scanning electron microscope revealed cubic type shape of grains. EDS analysis conformed the elemental composition. Higher value of DC electrical conductivity and less band gap for co-doped ZnO from UV-Vis studies confirmed the change in defect chemistry of ZnO Matrix.

  20. Local structure investigation of Co doped ZnO thin films prepared by RF sputtering technique

    NASA Astrophysics Data System (ADS)

    Yadav, A. K.; Haque, S. Maidul; Shukla, D.; Phase, D. M.; Jha, S. N.; Bhattacharyya, D.

    2016-05-01

    Co doped ZnO thin films have been prepared using rf magnetron sputtering technique with varying Co doping concentration. GIXRD has been used to probe long range order and Zn, Co and Oxygen K-edge XAFS measurements have been used for investigating local structure around Zn and Co atoms. GIXRD results show wurzite structure of the samples while XANES and EXAFS results at Zn and Co K edge show that Co is going at Zn site in ZnO matrix and no other phase is present. These results are further confirmed by O K edge and Co L2,3 edge XANES measurements.

  1. InGaAs/GaAs Quantum Dots: Effects of Ensemble Interactions, Interdiffusion, Segregation and Proton Irradiation

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2000-01-01

    A sumary or recent experimental findings on the effects of interdiffusion, segregation, strained ensemble interactions and proton irradiation on the optical properties of InGaAs/GaAs quantum dots (QDs) are presented.

  2. Auger effect in yellow light emitters based on InGaN–AlGaN–GaN quantum wells

    NASA Astrophysics Data System (ADS)

    Huong Ngo, Thi; Gil, Bernard; Valvin, Pierre; Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe

    2016-05-01

    The Auger effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a threshold P T that depends on the design of the sample. Above this threshold, the variation of the intensity becomes sublinear, which is characteristic of the onset of Auger recombination processes. After extracting the evolution of IQE with pump power from the experimental data, we use a modified ABC modeling that includes the residual n-type doping to estimate the contribution of different recombination channels. We find that the Auger effect dominates in the high-excitation regime. In addition, we find that intercalating an AlGaN-strain-compensating layer reduces not only the coefficient of nonradiative recombination rates but also reduces the onset of Auger recombination.

  3. On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

    SciTech Connect

    Tsai, Jung-Hui

    2015-02-09

    The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which can be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.

  4. Synthesis, characterization and degradation of Bisphenol A using Pr, N co-doped TiO 2 with highly visible light activity

    NASA Astrophysics Data System (ADS)

    Yang, Juan; Dai, Jun; Li, Jiantong

    2011-08-01

    Praseodymium and nitrogen co-doped titania (Pr/N-TiO 2) photocatalysts, which could degrade Bisphenol A (BPA) under visible light irradiation, were prepared by the modified sol-gel process. Tetrabutyl titanate, urea and praseodymium nitrate were used as the sources of titanium, nitrogen and praseodymium, respectively. The resulting materials were investigated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), UV-vis absorbance spectroscopy, X-ray photoelectron spectroscopy (XPS), N 2 adsorption-desorption isotherm and Fourier transform infrared spectra (FTIR). It was found that Pr doping inhibited the growth of crystalline size and the transformation from anatase to rutile. The degradation of BPA under visible light illumination was taken as probe reaction to evaluate the photo-activity of the co-doped photocatalyst. In our experiments, the optimal dopant amount of Pr was 1.2 mol% and the calcination temperature was 500 °C for the best photocatalytic activity. Pr/N-TiO 2 samples exhibited enhanced visible-light photocatalytic activity compared to N-TiO 2, undoped TiO 2 and commercial P25. The nitrogen atoms were incorporated into the crystal of titania and could narrow the band gap energy. Pr doping could slow the radiative recombination of photogenerated electrons and holes in TiO 2. The improvement of photocatalytic activity was ascribed to the synergistic effects of nitrogen and Pr co-doping.

  5. Ultrasonic-assisted sol-gel synthesis of samarium, cerium co-doped TiO2 nanoparticles with enhanced sonocatalytic efficiency.

    PubMed

    Eskandarloo, Hamed; Badiei, Alireza; Behnajady, Mohammad A; Ziarani, Ghodsi Mohammadi

    2015-09-01

    In this work, pure TiO2 and samarium, cerium mono-doped and co-doped TiO2 catalysts were synthesized by an ultrasonic-assisted sol-gel method and their sonocatalytic efficiency studied toward removal of Methyl Orange as a model organic pollutant from the textile industry. The relationship of structure and sonocatalytic performance of catalysts was established by using various techniques, such as XRD, TEM, SEM, EDX, DRS, and PL. A comparison on the removal efficiency of sonolysis alone and sonocatalytic processes was performed. The results showed that the samarium, cerium co-doped TiO2 catalyst with narrower band gap energy and smaller particle size leads to a rapid removal of pollutant. It was believed that Sm(3+) and Ce(4+) ions can serve as superficial trapping for electrons at conduction band of TiO2 and prolonged the lifetime of electron-hole pairs. Finally, the effect of synthesis and operational variables on the sonocatalytic activity of co-doped TiO2 catalyst was studied and optimized using response surface methodology as a statistical technique. The results showed that the maximum removal efficiency (96.33%) was achieved at the optimum conditions: samarium content of 0.6 wt%, cerium content of 0.82 wt%, initial pollutant concentration of 4.31 mg L(-1), catalyst dosage of 0.84 mg L(-1), ultrasonic irradiation power of 700 W, and irradiation time of 50 min. PMID:25682738

  6. Co-Doped MoS₂ Nanosheets with the Dominant CoMoS Phase Coated on Carbon as an Excellent Electrocatalyst for Hydrogen Evolution.

    PubMed

    Dai, Xiaoping; Du, Kangli; Li, Zhanzhao; Liu, Mengzhao; Ma, Yangde; Sun, Hui; Zhang, Xin; Yang, Ying

    2015-12-16

    Highly active and low-cost catalysts for hydrogen evolution reaction (HER) are crucial for the development of efficient water splitting. Molybdenum disulfide (MoS2) nanosheets possess unique physical and chemical properties, which make them promising candidates for HER. Herein, we reported a facile, effective, and scalable strategy by a deposition-precipitation method to fabricate metal-doped (Fe, Co, Ni) molybdenum sulfide with a few layers on carbon black as noble metal-free electrocatalysts for HER. The CoMoS phase after thermal annealing in Co-doped MoS2 plays a crucial role for the enhanced HER. The optimized Co-doped MoS2 catalyst shows superior HER performance with a high exchange current density of 0.03 mA·cm(-2), low onset potential of 90 mV, and small Tafel slope of 50 mV·dec(-1), which also exhibits excellent stability of 10000 cycles with negligible loss of the cathodic current. The superior HER activity originates from the synergistically structural and electronic modulations between MoS2 and Co ions, abundant defects in the active edge sites, as well as the good balance between active sites and electronic conductivity. Thanks to their ease of synthesis, low cost, and high activity, the Co-doped MoS2 catalysts appear to be promising HER catalysts for electrochemical water splitting. PMID:26599427

  7. Fabrication of the C-N co-doped rod-like TiO{sub 2} photocatalyst with visible-light responsive photocatalytic activity

    SciTech Connect

    Li, Liang-Hai; Lu, Juan; Wang, Zuo-Shan; Yang, Lu; Zhou, Xiu-Feng; Han, Lu

    2012-06-15

    Highlights: ► Novel synthesis of C-N co-doped TiO{sub 2}. ► Self-assembly of C-N co-doped TiO{sub 2} nanorods by nanoparticles. ► Excellent photocatalytic efficiency. -- Abstract: The C-N co-doped TiO{sub 2} nanorods were synthesized by the vapor transport method of water molecules, and urea was used as the carbon and nitrogen source. The samples were characterized by X-ray diffraction and photoelectron spectroscopy analysis. The scanning electron microscope images showed that as-prepared TiO{sub 2} powders were nanorods, which were formed by the stacking of nanoparticles with a uniform size around 40 nm. The degradation of methylene blue with the prepared nanorods demonstrated the photocatalytic activities of TiO{sub 2} under visible light are improved by doping with C and N elements. The main reasons were discussed: doping with C and N elements could enhance the corresponding visible-light absorption of TiO{sub 2}. On the other hand, doping C and N could create more oxygen vacancies in the TiO{sub 2} crystals, which could capture the photogenerated electrons more effectively. Thus, more photogenerated holes could be left to improve the photocatalytic activity of TiO{sub 2}.

  8. Self-interaction effects in (Ga,Mn)As and (Ga,Mn)N

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Spaldin, Nicola A.; Sanvito, Stefano

    2005-02-01

    The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-spin density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account for the effects of strong correlation. We find that, as expected, the self-interaction is not strong in (Ga,Mn)As, because the Fermi energy is crossed by weakly correlated As p-Mn d hybridized bands and the Mn 3d character is distributed through the whole valence band manifold. This result validates the extensive literature of LSDA studies on (Ga,Mn)As, including the conclusion that the ferromagnetism is hole-mediated. In contrast, the LSDA gives a qualitatively incorrect band structure for (Ga,Mn)N, which is characterized by localized Mn 3d bands with very strong self-interaction. Our pseudo-SIC calculations show a highly confined hole just above the Fermi energy in the majority band manifold. Such a band arrangement is consistent with (although by no means conclusive evidence for) a recent suggestion [Phys. Rev. B 033203 (2002)] that formation of Zhang-Rice magnetic polarons is responsible for hole-mediated ferromagnetism in (Ga,Mn)N.

  9. HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

    NASA Astrophysics Data System (ADS)

    Rohrbaugh, Nathaniel; Hernandez-Balderrama, Luis; Kaess, Felix; Kirste, Ronny; Collazo, Ramon; Ivanisevic, Albena

    2016-06-01

    This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.

  10. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires.

    PubMed

    Kasanaboina, Pavan; Sharma, Manish; Deshmukh, Prithviraj; Reynolds, C Lewis; Liu, Yang; Iyer, Shanthi

    2016-12-01

    The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm(-1) and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region. PMID:26831685

  11. Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

    NASA Astrophysics Data System (ADS)

    Kasanaboina, Pavan; Sharma, Manish; Deshmukh, Prithviraj; Reynolds, C. Lewis; Liu, Yang; Iyer, Shanthi

    2016-02-01

    The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm-1 and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.

  12. Effects of Ga ion-beam irradiation on monolayer graphene

    SciTech Connect

    Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei; Ge, Daohan

    2013-08-12

    The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

  13. Effects of Ga ion-beam irradiation on monolayer graphene

    NASA Astrophysics Data System (ADS)

    Wang, Quan; Mao, Wei; Ge, Daohan; Zhang, Yanmin; Shao, Ying; Ren, Naifei

    2013-08-01

    The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

  14. Yb-Er co-doped phosphate fiber with hexagonal inner cladding

    NASA Astrophysics Data System (ADS)

    Wen, Lei; Wang, Longfei; He, Dongbing; Chen, Danping; Hu, Lili

    2016-04-01

    An Yb-Er co-doped phosphate glass double-clad fiber with hexagonal inner cladding was fabricated by stack-and-draw method. Output power of 4.9 W was extracted with slope efficiency of 30 % from the fiber with 55 cm in length.

  15. Magnetic field dependence of magnetic domains in Co doped Mn2Sb using magnetic force microscopy

    NASA Astrophysics Data System (ADS)

    Singh, Vikram; Saha, Pampi; Kushwaha, Pallavi; Thamizhavel, A.; Rawat, Rajeev

    2016-05-01

    Magnetic domains in the ferrimagnetic state of Co doped Mn2Sb single crystal has been visualized using Magnetic Force Microscopy. It shows fractal like domain structure. With the application of magnetic field, single domain state is achieved around 2000 Oe. The MFM images collected during field increasing and decreasing cycles show different morphology for same field value.

  16. Enhanced ferromagnetism in co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Trivedi, Harsh; Singh, Deepa; Gupta, Rajeev; Garg, Ashish

    2012-02-01

    BiFeO3 (BFO) is the most studied multiferroic material with high ferroelectric polarization as well above room temperature transition temperatures. Studies have shown significant improvements in the electrical and magnetic properties of BFO upon atomic substitutions at Bi (A) and Fe (B) sites. While enhanced ferromagnetism upon A-site doping is attributed to the suppression of cycloidal spin ordering of Fe moments, B site substitution reduces leakage current by eliminating oxygen vacancies. This study aims to combine these two aspects by co-doping the material at A- and B- sites using La^3+ and V^3+/V^+5 respectively and to investigate the electrical and magnetic characteristics of co-doped BFO. La-doped LaxBi1-xFeO3 and co-doped LaxBi1-xVyFe1-yO3 (x = .05, 0.1, 0.15, 0.2; y = 0.03) samples were prepared solid-state reaction method. While La-doped samples show only reduced leakage without any discernible change in the magnetic characteristics, co-doped samples (La^3+ & V^5+ ) show significant enhancements in magnetic properties in addition to reduced leakage attributed to the elimination of oxygen vacancies. Improvement in the magnetic characteristics can be understood as a consequence of enhanced double exchange interaction between adjacent Fe ions. This argument is further strengthened by our observation that co-doped samples made by substitution of Fe with V^+3 show a magnetic response equivalent to that of only La-doped BFO samples.

  17. Scaling performance of Ga2O3/GaN nanowire field effect transistor

    NASA Astrophysics Data System (ADS)

    Li, Chi-Kang; Yeh, Po-Chun; Yu, Jeng-Wei; Peng, Lung-Han; Wu, Yuh-Renn

    2013-10-01

    A three-dimensional finite element solver is applied to investigate the performance of Ga2O3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are provided to compare with the simulation, and they show good agreement. The performance of a shorter gate length (<50 nm) is studied and scaling issues of the short-channel effect are analyzed. With a better surrounding gate design and a recessed gate approach, the optimal conditions for a 20 nm gate length are explored in this paper.

  18. Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

    NASA Astrophysics Data System (ADS)

    Abderrahmane, A.; Koide, S.; Tahara, T.; Sato, S.; Ohshima, T.; Okada, H.; Sandhu, A.

    2013-04-01

    Low temperature Hall effect measurements were carried on AlGaN/GaN micro-Hall effect sensors before and after irradiation with 380 keV and fluence of 1014 protons/cm2 protons. The sheet electron density after irradiation did not show significant changes but there was a dramatic decrease in the electron mobility of the heterostructures. Prior to irradiation, the observation of well-defined Landau plateaus in the Hall resistance and Shubnikov-de Haas oscillations (SdH) at 4.5 T was indicative of the high quality the heterojunction confining the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface of micro-Hall effect sensors. In contrast, the Landau plateaus disappeared after irradiation and the threshold magnetic field required for the observation of the SdH increased, which was accompanied by a decrease of the electron mobility. Temperature dependent magnetoresistance measurements were used to deduce the effective mass and the quantum scattering time before irradiation. A negative magnetoresistance was observed at low magnetic fields which is related to weak localization and parabolic negative magnetoresistance attributed to electron-electron interaction in both samples.

  19. Sustained phase separation and spin glass in Co-doped KxFe2-ySe2 single crystals

    DOE PAGESBeta

    Ryu, Hyejin; Wang, Kefeng; Opacic, M.; Lazarevic, N.; Warren, J. B.; Popovic, Z. V.; Bozin, Emil S.; Petrovic, C.

    2015-11-19

    We describe Co substitution effects in KxFe2-y-zCozSe2 (0.06 ≤ z ≤ 1.73) single crystal alloys. By 3.5% of Co doping superconductivity is suppressed whereas phase separation of semiconducting K2Fe4Se5 and superconducting/metallic KxFe2Se2 is still present. We show that the arrangement and distribution of superconducting phase (stripe phase) is connected with the arrangement of K, Fe and Co atoms. Semiconducting spin glass is found in proximity to superconducting state, persisting for large Co concentrations. At high Co concentrations ferromagnetic metallic state emerges above the spin glass. This is coincident with changes of the unit cell, arrangement and connectivity of stripemore » conducting phase.« less

  20. Sonocatalytic degradation of azo fuchsine in the presence of the Co-doped and Cr-doped mixed crystal TiO2 powders and comparison of their sonocatalytic activities.

    PubMed

    Wang, Jun; Lv, Yanhui; Zhang, Zhaohong; Deng, Yingqiao; Zhang, Liquan; Liu, Bin; Xu, Rui; Zhang, Xiangdong

    2009-10-15

    In order to degrade some pollutants effectively under ultrasonic irradiation, the Co-doped and Cr-doped mixed crystal TiO(2) powders, with high sonocatalytic activity, were prepared as sonocatalyst. The Co-doped and Cr-doped mixed crystal TiO(2) powders as sonocatalyst were prepared through sol-gel and heat-treated methods from tetrabutylorthotitanate, and then were characterized by XRD and TG-DTA technologies. In order to compare and evaluate the sonocatalytic activity of the Co-doped and Cr-doped mixed crystal TiO(2) powders, the low power ultrasound was as an irradiation source and the azo fuchsine was chosen as a model compound to be degraded. The degradation process was investigated by UV-vis, TOC, ion chromatogram and HPLC techniques. The results indicated that the sonocatalytic activity of Cr-doped mixed crystal TiO(2) powder was higher than that of Co-doped and undoped mixed crystal TiO(2) powder during the sonocatalytic degradation of the azo fuchsine in aqueous solution. These results may be of great significance for driving sonocatalytic method to treat non- or low-transparent industrial wastewaters. PMID:19467773

  1. High temperature ferromagnetism and optical properties of Co doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Pal, Bappaditya; Giri, P. K.

    2010-10-01

    We report on the occurrence of high temperature ferromagnetism (FM) in ZnO nanoparticles (NPs) doped with Co-atoms. ZnO NPs of two different initial sizes are doped with 3% and 5% Co using ball milling and FM is studied at room temperature and above. X-ray diffraction and high-resolution transmission electron microscopy analysis confirm the absence of metallic Co clusters or any other phase different from würtzite-type ZnO. UV-visible absorption studies show change in band structure and photoluminescence studies show green emission band at 520 nm indicating incorporation of Co-atoms and presence of oxygen vacancy defects, respectively in ZnO lattice. Micro-Raman studies of doped samples shows defect related additional bands at 547 and 574 cm-1. XRD and Raman spectra provide clear evidence for strain in the doped ZnO NPs. The field dependence of magnetization (M-H curve) measured at room temperature exhibits the clear FM with saturation magnetization (Ms) and coercive field (Hc) of the order of 3-7 emu/g and 260 Oe, respectively. Temperature dependence of magnetization (M-T) measurement shows sharp ferromagnetic to paramagnetic transition with a high Curie temperature (Tc) of ˜800 K for 3% Co doped ZnO NPs. It is found that doping at 5% and higher concentration does not exhibit a proper magnetic transition. We attempt to fit the observed FM data with the bound magnetic polaron (BMP) model involving localized carriers and magnetic cations. However, calculated concentration of the BMPs is well below the typical percolation threshold in ZnO. We believe that observed high temperature FM is primarily mediated by defects in the strained NPs. ZnO NPs of lower initial size show enhanced FM that may be attributed to size dependent doping effect.

  2. Characterization of partially ordered GaInP/GaAs heterointerfaces by the quantum Hall effect

    NASA Astrophysics Data System (ADS)

    Uchida, Kazuo; Satoh, Kiwamu; Asano, Keita; Koizumi, Atsushi; Nozaki, Shinji

    2013-05-01

    The new approach to the characterization of semiconductor interfacial properties by the quantum Hall effect (QHE) and the scanning near field optical microscopy (SNOM) is demonstrated to the heterointerfaces of partially ordered GaInP/GaAs grown by low-pressure Metal Organic Vapor Phase Epitaxy. The Shubnikov de-Haas (SdH) oscillations and the Hall plateaus are observed in the heterointerfaces of both the less-ordered and more-ordered GaInP/GaAs samples with a large clover-shape, but these samples exhibit both 2D and 3D electron behaviors. In contrast to large clover-shaped samples, the distinct SdH oscillations and the Hall plateaus in the less-ordered sample, while the single SdH oscillation and the corresponding large plateau in the more-ordered small Hall-bar sample are observed. These results suggest that there may be many domains, each having a different carrier density and sizes in the less-ordered sample, while one or few large domains with uniform carrier concentration and sizes in the more-ordered sample. In SNOM measurements, PL intensity varies in the mapping of the more-ordered sample and it is concluded that the variation of the PL intensity may result from an inhomogeneous distribution of non-radiative recombination centers in the more-ordered sample.

  3. Neutron irradiation effects in GaAs

    SciTech Connect

    Patel, J.U.

    1992-01-01

    Changes in electrical properties of n-GaAs as a result of irradiations with fast neutron have been studied, after epitaxial layers doped with Si at concentrations in the range 1.35 x 10[sup 15] to 1.60 x 10[sup 16] cm[sup [minus]3] were irradiated with reactor neutron fluences up to 1.31 x 10[sup 15] cm [sup [minus]2]. When the changes in carrier concentration, Hall mobility and resistivity were more than 25% of their initial values, nonlinear dependence on neutron fluence was apparent. New theory is proposed which explains the changes in electrical properties in terms of rates of trapping and release of charges. A theoretical relationship is derived for the change in carrier concentration as a function of neutron fluence and Fermi level shift was found to be consistent with the observed changes in carrier concentration. A correlation has been found between the changes in carrier concentration and mobility with neutron fluence using newly defined physically meaningful parameters in the case of two pairs of samples. The correlation has been explained in terms of the increased scattering of charge carriers from the defects created by neutrons that trap the free carriers. Mobility changes were measured at temperatures from 15 K to 305 K in n-GaAs van-der Pauw samples irradiated by fast reactor neutrons. The inverse mobility values obtain versus temperature, from the variable temperature Hall measurements, in the case of irradiated and in-irradiated samples were fitted using the relation [mu][sup [minus]1] = T[sup [minus]3/2] + B T[sup 3/2]. The inverse mobility increased as a result of neutron irradiations over the whole range of temperature, the increase being attributed to the increased scattering from neutron induced charged defects.

  4. Synthesis, structural, optical, and magnetic properties of Co doped, Sm doped and Co+Sm co-doped ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Poornaprakash, B.; Poojitha, P. T.; Chalapathi, U.; Subramanyam, K.; Park, Si-Hyun

    2016-09-01

    The compositional, structural, optical and magnetic properties of ZnS, Zn0.98Co0.02S, Zn0.98Sm0.02S and Zn0.96Co0.02Sm0.02S nanoparticles synthesized by a hydrothermal method are presented and discussed. X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) studies revealed that all the samples exhibited cubic structure without any impurity phases. X-ray photoelectron spectroscopy (XPS) results revealed that the Co and Sm ions existed in +2 and +3 states in these samples. The photoluminescence (PL) spectra of all the samples exhibited a broad emission in the visible region. The room temperature magnetization versus applied magnetic field (M-H) curves demonstrated that the Sm+Co doped nanoparticles exhibited enhanced ferromagnetic behavior compare to Co and Sm individually doped ZnS nanoparticles, which is probably due to the exchange interaction between conductive electrons with local spin polarized electrons on the Co2+ or Sm3+ ions. This study intensifies the understanding of the novel performances of co-doped ZnS nanoparticles and also provides possibilities to fabricate future spintronic devices.

  5. Effect of photocatalytic oxidation technology on GaN CMP

    NASA Astrophysics Data System (ADS)

    Wang, Jie; Wang, Tongqing; Pan, Guoshun; Lu, Xinchun

    2016-01-01

    GaN is so hard and so chemically inert that it is difficult to obtain a high material removal rate (MRR) in the chemical mechanical polishing (CMP) process. This paper discusses the application of photocatalytic oxidation technology in GaN planarization. Three N-type semiconductor particles (TiO2, SnO2, and Fe2O3) are used as catalysts and added to the H2O2-SiO2-based slurry. By optical excitation, highly reactive photoinduced holes are produced on the surface of the particles, which can oxidize OH- and H2O absorbed on the surface of the catalysts; therefore, more OH* will be generated. As a result, GaN MRRs in an H2O2-SiO2-based polishing system combined with catalysts are improved significantly, especially when using TiO2, the MRR of which is 122 nm/h. The X-ray photoelectron spectroscopy (XPS) analysis shows the variation trend of chemical composition on the GaN surface after polishing, revealing the planarization process. Besides, the effect of pH on photocatalytic oxidation combined with TiO2 is analyzed deeply. Furthermore, the physical model of GaN CMP combined with photocatalytic oxidation technology is proposed to describe the removal mechanism of GaN.

  6. Low-temperature ferromagnetic properties in Co-doped Ag{sub 2}Se nanoparticles

    SciTech Connect

    Yang, Fengxia E-mail: xia9020@hust.edu.cn; Yu, Gen; Han, Chong; Liu, Tingting; Zhang, Duanming; Xia, Zhengcai E-mail: xia9020@hust.edu.cn

    2014-01-06

    β-Ag{sub 2}Se is a topologically nontrivial insulator. The magnetic properties of Co-doped Ag{sub 2}Se nanoparticles with Co concentrations up to 40% were investigated. The cusp of zero-field-cooling magnetization curves and the low-temperature hysteresis loops were observed. With increasing concentration of Co{sup 2+} ions mainly substituting Ag{sub I} sites in the Ag{sub 2}Se structure, the resistivity, Curie temperature T{sub c}, and magnetization increased. At 10 T, a sharp drop of resistance near T{sub c} was detected due to Co dopants. The ferromagnetic behavior in Co-doped Ag{sub 2}Se might result from the intra-layer ferromagnetic coupling and surface spin. This magnetic semiconductor is a promising candidate in electronics and spintronics.

  7. Enhanced dielectric, impedance and magnetic characteristics of Co doped multiferroic Bi2Fe4O9

    NASA Astrophysics Data System (ADS)

    Mohapatra, S. R.; Sahu, B.; Kaushik, S. D.; Singh, A. K.

    2016-05-01

    Multiferroic Bi2Fe4(1-x)Co4xO9 (x = 0, 0.05) were prepared by conventional solid state reaction route. X-ray diffraction (XRD) result indicated the decrease in lattice parameters due to 5% Co doping. Grain growth in the doped composition was confirmed from surface morphology characterization. Frequency dependent real part of dielectric constant (ɛ') at room temperature showed an enhancement of ~70% in doped sample at 1 kHz. A decrease in peak height with doping was noticed from the modulus study. Lastly, room temperature M-H measurement upto 9 T showed induced ferromagnetism in Bi2Fe4O9 due to 5% Co doping. The values of remnant magnetization (Mr) and coercive field (Hc) in Bi2Fe3.8Co0.2O9 was found to be 0.007 µB/f.u. and 0.295 kOe respectively.

  8. Upconversion luminescence of Yb 3+/Tb 3+ co-doped tellurite glasses

    NASA Astrophysics Data System (ADS)

    Kochanowicz, Marcin; Zmojda, Jacek; Dorosz, Dominik; Miluski, Piotr; Dorosz, Jan

    2014-05-01

    In the article the upconversion luminescence ofTeO2- GeO2 - PbO - PbF2- BaO - Nb2O5 - LaF3 glass system co-doped withYb 3+ /Tb 3+ under 976 nm laser diode excitation was investigated. The influence of Tb2O3concentration on the luminescent properties was determined. Measured strong luminescence at492, 547, 588, 622 nm correspond to 5D4→7FJ (J=6, 4, 3) transitions. Energy transfer (ET) mechanism involved in observed emission was discussed. The highest upconversion emission intensity was obtained in the tellurite glass co-doped with 0.5 Yb2O3/0.5 Tb2O3 (mol%).

  9. Enhanced electrical activation in In-implanted Ge by C co-doping

    SciTech Connect

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Pereira, L. M. C.; Glover, C. J.; Russo, S. P.

    2015-11-23

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  10. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  11. High field effects of GaN HEMTs.

    SciTech Connect

    Barker, Joy; Shul, Randy John

    2004-09-01

    This report represents the completion of a Laboratory-Directed Research and Development (LDRD) program to develop and fabricate geometric test structures for the measurement of transport properties in bulk GaN and AlGaN/GaN heterostructures. A large part of this study was spent examining fabrication issues related to the test structures used in these measurements, due to the fact that GaN processing is still in its infancy. One such issue had to do with surface passivation. Test samples without a surface passivation, often failed at electric fields below 50 kV/cm, due to surface breakdown. A silicon nitride passivation layer of approximately 200 nm was used to reduce the effects of surface states and premature surface breakdown. Another issue was finding quality contacts for the material, especially in the case of the AlGaN/GaN heterostructure samples. Poor contact performance in the heterostructures plagued the test structures with lower than expected velocities due to carrier injection from the contacts themselves. Using a titanium-rich ohmic contact reduced the contact resistance and stopped the carrier injection. The final test structures had an etch constriction with varying lengths and widths (8x2, 10x3, 12x3, 12x4, 15x5, and 16x4 {micro}m) and massive contacts. A pulsed voltage input and a four-point measurement in a 50 {Omega} environment was used to determine the current through and the voltage dropped across the constriction. From these measurements, the drift velocity as a function of the applied electric field was calculated and thus, the velocity-field characteristics in n-type bulk GaN and AlGaN/GaN test structures were determined. These measurements show an apparent saturation velocity near to 2.5x10{sup 7} cm/s at 180 kV/cm and 3.1x10{sup 7} cm/s, at a field of 140 kV/cm, for the bulk GaN and AlGaN heterostructure samples, respectively. These experimental drift velocities mark the highest velocities measured in these materials to date and confirm

  12. Giant temperature coefficient of resistance in Co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Zhou, X. F.; Zhang, H.; Yan, H.; He, C. L.; Lu, M. H.; Hao, R. Y.

    2014-03-01

    A novel high-performance thermistor material based on Co-doped ZnO thin films is presented. The films were deposited by the pulsed laser deposition technique on Si (111) single-crystal substrates. The structural and electronic transport properties were correlated as a function of parameters such as substrate temperature and Co-doped content for Zn1- x Co x O ( x=0.005,0.05,0.10 and 0.15) to prepare these films. The Zn1- x Co x O films were deposited at various substrate temperatures between 20 and 280 °C. A value of 20 %/K for the negative temperature coefficient of resistance (TCR) with a wide range near room temperature was obtained. It was found that both TCR vs. temperature behavior and TCR value were strongly affected by cobalt doping level and substrate temperature. In addition, a maximal TCR value of over 20 % K-1 having a resistivity value of 3.6 Ω cm was observed in a Zn0.9Co0.1O film near 260 °C, which was deposited at 120 °C and shown to be amorphous by X-ray diffraction. The result proved that the optimal Co concentration could help us to achieve giant TCR in Co-doped ZnO films. Meanwhile, the resistivities of the films ranged from 0.4 to 270 Ω cm. A Co-doped ZnO/Si film is a strong candidate of thermometric materials for non-cooling and high-performance bolometric applications.

  13. Structural, optical and dielectric property of Co doped Bi{sub 2}Fe{sub 4}O{sub 9}

    SciTech Connect

    Swain, Smita Mohapatra, S. R. Sahoo, B. Singh, A. K.

    2014-04-24

    Multiferroic Bi{sub 2}Fe{sub 4}O{sub 9} and Co doped Bi{sub 2}Fe{sub 4}O{sub 9} are prepared by solid state route reaction method using bismuth oxide(Bi{sub 2}O{sub 3}), iron oxide(Fe{sub 2}O{sub 3}) and cobalt oxide (Co{sub 3}O{sub 4}). Their structural optical and dielectric properties are studied and compared. X-ray diffraction (XRD) results confirm that there is no change in crystal structure due to Co doping. From dielectric constant measurement we conclude that dielectric constant increases due to Co doping. UV-Visible plot shows due to Co doping bang gap energy increases.

  14. Gain dynamics in Er(3+):Yb(+) co-doped fiber amplifiers.

    PubMed

    Steinke, M; Neumann, J; Kracht, D; Wessels, P

    2015-06-01

    Understanding the gain dynamics of fiber amplifiers is essential for the implementation and active stabilization of low noise amplifiers or for coherent beam combining schemes. The gain dynamics of purely Er3+ or Yb3+ doped fiber amplifiers are well studied, whereas no analysis for co-doped systems, especially for Er3+:Yb3+ co-doped fiber amplifiers has been performed, so far. Here, we analyze for the first time the gain dynamics of Er3+:Yb3+ co-doped fiber amplifiers theoretically and experimentally. It is shown that due to the energy transfer between the Yb3+ and Er3+ ions a full analytical solution is not possible. Thus, we used numerical simulations to gain further insights. Comparison of experimental and numerical results shows good qualitative agreement. In addition, we were able to determine the Yb3+-Er3+ transfer function of the energy transfer experimentally. PMID:26072851

  15. Luminescence Properties of Sm3+/Eu3+ Co-Doped ZnO Quantum Dots.

    PubMed

    Liu, Fengyi; Li, Hong; Hu, Yajing; Na, Jin; Mou, Yun; Yang, Kun; Ye, Zuhu; Li, Mingyue; Xie, Ya-Hong

    2016-04-01

    In order to improve luminescence properties of semiconductor ZnO quantum dots (QDs), Sm3+/Eu3+ co-doped ZnO QDs have been controllably synthesized by sol-gel method in this paper. ZnO QDs have a spherical shape with mean diameter at about 5-6 nm, which was characterized by high-resolution transmission electron microscopy (HRTEM). ZnO QDs have hexagonal wurtzite structure with parts of Sm3+ and Eu3+ incorporated into the lattice, which was demonstrated by X-ray Diffraction (XRD). Luminescence properties at room temperature (RT) of different amount of Sm3+ and 2 mol% Eu3+ doped ZnO QDs were examined in-depth by optical spectra. In contrast to the Pr3+/Eu3+ co-doped fluorescent performance researched in our previous study, the photoluminescence (PL) spectra indicates the unique luminescence properties of Sm3+/Eu3+ co-doped ZnO QDs. In addition, fluorescence lifetimes were obtained to illustrate the luminous mechanism. PMID:27451672

  16. Local investigation of hyperfine interactions in pure and Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Mercurio, M. E.; Carbonari, A. W.; Cordeiro, M. R.; Saxena, R. N.; D'Agostino, L. Z.

    2010-05-01

    In the present work bulk samples of pure as well as Co-doped ZnO with different concentrations were prepared by sol-gel method from highly pure metallic Zn (99.9999%) and Co (99.9999%). The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray microanalysis (EDS) and perturbed gamma-gamma angular correlation (PAC) spectroscopy. Carrier-free 111In nuclei were introduced during preparation of the samples and used as probe nuclei at Zn sites for PAC measurements. PAC results show that both pure and Zn1-xCoxO ( x≤0.15) samples have the same electric quadrupole frequency when Co-doped samples are annealed in air, argon or nitrogen atmosphere at 1173 K. SEM and EDS results showed that Co-doped samples are homogeneous without any secondary Co phases. These observations indicate that Co ions are substituted for Zn ions and have a similar electronic structure of Zn ions. A weak local magnetism was observed at temperatures below about 300 K for Co concentration of 10% when sample was annealed in Nitrogen.

  17. Photoluminescence properties of ZnS nanoparticles co-doped with Pb 2+ and Cu 2+

    NASA Astrophysics Data System (ADS)

    Yang, Ping; Lü, Mengkai; Xü, Dong; Yuan, Duolong; Zhou, Guangjun

    2001-03-01

    Nanometer-scale ZnS, ZnS:Cu, ZnS:Pb, and ZnS co-doped with Cu 2+ and Pb 2+ have been synthesized using a chemical precipitation method. X-ray diffraction analysis shows that the diameter of the particles is 2-4 nm. These nanocrystals can be doped with copper and lead during the synthesis without altering the X-ray diffraction pattern. However, doping has shifted the luminescence to 530 nm (Cu 2+-doped) and 500-550 nm (co-doped with Cu 2+ and Pb 2+). In the case of ZnS:Pb nanocrystals, a relatively broad emission band (color range from blue to yellow) has been observed and its excitation wavelength shows a red shift. The photoluminescence intensity increases as the ZnS nanoparticles co-doped with Pb 2+ and Cu 2+. The results strongly suggest that doped ZnS nanocrystals, especially two kinds of metals activated ZnS nanocrystals, form a new class of luminescent materials.

  18. Valence band structure and magnetic properties of Co-doped Fe3O4(100) films

    NASA Astrophysics Data System (ADS)

    Ran, F. Y.; Tsunemaru, Y.; Hasegawa, T.; Takeichi, Y.; Harasawa, A.; Yaji, K.; Kim, S.; Kakizaki, A.

    2011-06-01

    Structural and magnetic properties, and the valence band structure of pure and Co-doped (up to 33%) Fe3O4(100) films were investigated. Reconstruction of the Fe3O4(100) surface is found to be blocked by Co doping. Doped Co ions in Fe3O4 are in a charge state of 2 + and substitute the Fe2+ in the B site of Fe3O4. All the films exhibit room temperature ferromagnetism. Co doping changes the coercivity and reduces saturation magnetization. The density of states near the Fermi level is reduced by Co doping due to the decrease of Fe2+ in the B site, which might responsible for the decrease in conductivity and magnetoresistance of Co-doped Fe3O4. The Verwey transition in the range of 100-120 K is observed for the pure Fe3O4 film, while no transition could be detected for Co-doped Fe3O4 films.

  19. Effect of the thickness of InGaN interlayer on a-plane GaN epilayer

    NASA Astrophysics Data System (ADS)

    Wang, Jian-Xia; Wang, Lian-Shan; Zhang, Qian; Meng, Xiang-Yue; Yang, Shao-Yan; Zhao, Gui-Juan; Li, Hui-Jie; Wei, Hong-Yuan; Wang, Zhan-Guo

    2015-02-01

    In this paper, we use the a-plane InGaN interlayer to improve the property of a-plane GaN. Based on the a-InGaN interlayer, a template exhibits that a regular, porous structure, which acts as a compliant effect, can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire. We find that the thickness of InGaN has a great influence on the growth of a-GaN. The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer. When the InGaN thickness exceeds a critical point, the a-GaN epilayer peels off in the process of cooling down to room temperature. This is an attractive way of lifting off a-GaN films from the sapphire substrate. Project supported by the National Natural Science Foundation of China (Grant Nos. 91233111, 61274041, and 11275228), the Special Funds for Major State Basic Research Project of China (Grant No. 2012CB619305), the National High Technology R & D Program of China (Grant Nos. 2014AA032603 and 2014AA032609), and the Guangdong Provincial Special Fund for LED Industrial Development, China (Grant No. 2012A080302003).

  20. Co-doping induced coexistence of superconductivity and ferromagnetism in Bi3.9Co0.1O4S3

    NASA Astrophysics Data System (ADS)

    Yu, Chuan; Feng, Zhenjie; Yin, Xunqing; Li, Qing; Kang, Baojuan; Lu, Bo; Jing, Chao; Cao, Shixun; Zhang, Jincang

    2016-09-01

    The effects of Co doping on the physical properties of the Bi4O4S3 system was studied. We discovered that stable Bi3.9Co0.1O4S3 compound exhibits both long-range ferromagnetism and enhanced superconductivity with thermodynamic evidences for Tc ∼ 5.5 K. We found that there is an anomalous feature which represents superconducting transition in the hysteretic M-vs.-H loops for Bi3.9Co0.1O4S3 at T = 3 K.

  1. Preparation and upconversion emission modification of Yb, Er co-doped Y2SiO5 inverse opal photonic crystals.

    PubMed

    Yan, Dong; Zhu, Jialun; Yang, Zhengwen; Wu, Hangjun; Wang, Rongfei; Qiu, Jianbei; Song, Zhiguo; Zhou, Dacheng; Yang, Yong; Yin, Zhaoyi

    2014-05-01

    Yb, Er co-doped Y2SiO5 inverse opal photonic crystals with three-dimensionally ordered macroporous were fabricated using polystyrene colloidal crystals as the template. Under 980 nm excitation, the effect of the photonic stopband on the upconversion luminescence of Er3+ ions has been investigated in the Y2SiO5:Yb, Er inverse opals. Significant suppression of the green or red UC emissions was detected if the photonic band-gap overlaps with the Er3+ ions emission band. PMID:24734639

  2. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE PAGESBeta

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  3. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; Kravchenko, I. I.; Zhang, Ming-Lan

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

  4. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  5. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Huang, Yang; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Yao; Wu, Shaoteng; Yuan, Guodong; Wang, JunXi; Wang, Guohong; Li, Jinmin

    2016-04-01

    To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.

  6. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect

    Liu, L.; Xi, Y. Y.; Ren, F.; Pearton, S. J.; Laboutin, O.; Cao, Yu; Johnson, Wayne J.; Kravchenko, Ivan I

    2012-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  7. Effect of wet oxidized AlxGa1-xAs layer on the interdiffusion of InGaAs/GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Choe, Joong-Seon; Ryu, Sang-Wan; Choe, Byung-Doo; Lim, H.

    1998-06-01

    The effect of wet oxidized AlAs cap layer and AlGaAs interlayer on the thermal stability of In0.2Ga0.8As/GaAs quantum well (QW) is studied. The QW interdiffusion rate is observed to increase with the Al composition of the AlxGa1-xAs interlayer until x reaches about 0.5 and then saturate for x⩾0.5. When the oxidation is performed at 380 °C for 15 min, the threshold value of x for the enhancement of QW interdiffusion is found to be 0.3. It is also confirmed that the QW interdiffusion can only be explained when the strain effect in InGaAs is taken into account.

  8. White light emission from Tm{sup 3+}/Dy{sup 3+} co-doped oxyfluoride germanate glasses under UV light excitation

    SciTech Connect

    Lakshminarayana, G.; Yang Hucheng; Qiu Jianrong

    2009-04-15

    In this paper, we report on the absorption and photoluminescence properties of Tm{sup 3+}/Dy{sup 3+} ions co-doped oxyfluoride germanate glasses for white light emission. The X-ray diffraction (XRD) and differential thermal analysis (DTA) profiles of the host glass have been carried out to confirm its structure and thermal stability. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (OMEGA{sub 2}, OMEGA{sub 4} and OMEGA{sub 6}) have been evaluated for Tm{sup 3+} and Dy{sup 3+} ions. A combination of blue, yellow and red emissions has emerged in these glasses, which allows the observation of bright white light when the glasses are excited by the ultraviolet light. The white light luminescence colour could be changed by varying the excitation wavelength. Also, various colours of luminescence, including white light, can be easily tuned by adjusting the concentrations of Tm{sup 3+} or Dy{sup 3+} ions in the co-doped glasses. Concentration quenching effect was also investigated and possible energy transfer mechanism from Dy{sup 3+}->Tm{sup 3+} ions was explained which is also confirmed by the decay lifetime measurements. - Graphical Abstract: A combination of blue, yellow and red emissions has emerged from Tm{sup 3+}/Dy{sup 3+} co-doped glasses, which allows the observation of bright white light and makes them as excellent candidates applicable in the solid-state multi-colour three-dimensional display.

  9. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1–90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  10. Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

    NASA Astrophysics Data System (ADS)

    Ren, F.; Kopf, R. F.; Kuo, J. M.; Lothian, J. R.; Lee, J. W.; Pearton, S. J.; Shul, R. J.; Constantine, C.; Johnson, D.

    1998-05-01

    InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors have been exposed to inductively coupled plasma or electron cyclotron resonance H 2 plasmas as a function of pressure, source power and rf chuck power. The transconductance, gate ideality factor and saturated drain-source current are all degraded by the plasma treatment. Two mechanisms are identified: passivation of Si dopants in the InGaP or AlGaAs donor layers by H 0 and lattice disorder created by H + and H 2+ ion bombardment. HEMTs are found to be more susceptible to plasma-induced degradation than heterojunction bipolar transistors.

  11. Effect of the Yb3+ Concentration in Up-Conversion and Electrical Properties of Ho3+/Yb3+ Co-doped (0.94Na0.5Bi0.5TiO3-0.06BaTiO3) Ceramics

    NASA Astrophysics Data System (ADS)

    Liu, Qian; Li, Yanxia; Li, Jun; Chai, Xiaona; Zhao, Haifeng; Wang, Xusheng; Yao, Xi

    2016-07-01

    Ho3+/Yb3+ co-doped 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 (NBT-BT:Ho3+/Yb3+) ceramics were synthesized by solid-state reaction and characterized by x-ray diffraction (XRD), luminescent, dielectric, ferroelectric and piezoelectric measurements. The XRD diffraction data showed that all the ceramics were single phase with a perovskite structure. Bright green up-conversion (UC) emission bands (545 nm) and weak red UC emission bands (660 nm) corresponded to the transitions from (5F4, 5S2) → 5I8 and 4I5 → 5I8, respectively. Furthermore, optimized UC emission intensity was observed in the NBT-BT:0.005Ho3+/0.03Yb3+ samples. The thermal behavior of UC emission in the ceramics was also investigated and the maximum sensitivity based on fluorescence intensity ratio (FIR) technology was approximately 0.0042 K-1 at 100 K. Moreover, relatively good dielectric properties ( ɛ = 4475) and ferroelectric properties ( P r = 32 μ/cm2 and E c = 37 kV) were obtained in NBT-BT:0.005Ho3+/0.005Yb3+. As a multi-functional material, NBT-BT:Ho3+/Yb3+ ceramics may be useful in electro-optical devices.

  12. Effect of the Yb3+ Concentration in Up-Conversion and Electrical Properties of Ho3+/Yb3+ Co-doped (0.94Na0.5Bi0.5TiO3-0.06BaTiO3) Ceramics

    NASA Astrophysics Data System (ADS)

    Liu, Qian; Li, Yanxia; Li, Jun; Chai, Xiaona; Zhao, Haifeng; Wang, Xusheng; Yao, Xi

    2016-04-01

    Ho3+/Yb3+ co-doped 0.94Na0.5Bi0.5TiO3-0.06BaTiO3 (NBT-BT:Ho3+/Yb3+) ceramics were synthesized by solid-state reaction and characterized by x-ray diffraction (XRD), luminescent, dielectric, ferroelectric and piezoelectric measurements. The XRD diffraction data showed that all the ceramics were single phase with a perovskite structure. Bright green up-conversion (UC) emission bands (545 nm) and weak red UC emission bands (660 nm) corresponded to the transitions from (5F4, 5S2) → 5I8 and 4I5 → 5I8, respectively. Furthermore, optimized UC emission intensity was observed in the NBT-BT:0.005Ho3+/0.03Yb3+ samples. The thermal behavior of UC emission in the ceramics was also investigated and the maximum sensitivity based on fluorescence intensity ratio (FIR) technology was approximately 0.0042 K-1 at 100 K. Moreover, relatively good dielectric properties (ɛ = 4475) and ferroelectric properties (P r = 32 μ/cm2 and E c = 37 kV) were obtained in NBT-BT:0.005Ho3+/0.005Yb3+. As a multi-functional material, NBT-BT:Ho3+/Yb3+ ceramics may be useful in electro-optical devices.

  13. Understanding the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals

    SciTech Connect

    Adhikari, Rajesh; Choi, Jinhyuk; Narro-García, R.; De la Rosa, E.; Sekino, Tohru; Lee, Soo Wohn

    2014-08-15

    In this paper we report the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals synthesized via microwave assisted sol–gel processing route. Structural, morphological and upconversion luminescence properties were investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), UV–vis diffuse reflectance spectroscopy (UV–vis DRS) and Upconversion Photoluminescence spectra analysis. Results revealed that the oval shaped BaMoO{sub 4} nanocrystals ranging in size from 40 to 60 nm having tetragonal scheelite crystal structure were obtained by sol–gel route. The infrared to visible upconversion luminescence has been investigated in Er{sup 3+}/Yb{sup 3+} co-doped in BaMoO{sub 4}with different Yb{sup 3+} concentrations. Intense green upconversion emissions around 528, 550 nm, and red emission at 657 nm corresponding to the {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} transitions, respectively to the {sup 4}I{sub 15/2} ground state were observed when excited by CW laser radiation at 980 nm. The green emissions were greatly enhanced after the addition of sensitizer (Yb{sup 3+} ions). The effect of Yb{sup 3+} on the upconversion luminescence intensity was analyzed and explained in terms of the energy transfer process based. The reported work establishes the understanding of molybdates as an alternative host material for upconversion luminescence. - Graphical abstract: Infrared to visible upconversion luminescence of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. - Highlights: • Nanocrystals were synthesized by microwave assisted sol–gel processing route. • Strong green emissions were observed in Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. • Provides an insight on Upconversion luminescence properties of oxides host materials.

  14. Effects of spontaneous polarization on GaInN/GaN quantum well structures

    SciTech Connect

    Thomsen, M.; Joenen, H.; Rossow, U.; Hangleiter, A.

    2011-06-15

    Using electron beam irradiation, cathodoluminescence, and photoluminescence under ultrahigh vacuum conditions, we study the effect of spontaneous polarization on polar (0001) and nonpolar (1100) GaInN/GaN quantum well structures. We use cathodoluminescence measurements with an electron beam irradiation time of up to several hours. A drastic blueshift of the quantum well emission accompanied by a 100-fold increase of intensity is observed in polar samples. These changes can be described by an activation of the spontaneous polarization field due to the desorption of surface charges, which counteracts the piezoelectric field in the quantum well. Etching or annealing of the surface leads to similar effects. The influence of the sample structure was investigated by varying the cap thickness of the samples. A different time- dependent behavior of changes in the quantum well emission energy and the intensity depending on cap thickness and acceleration voltage was observed. This can be explained by de-screening and screening effects induced by the electron beam which are discussed in detail. For nonpolar (1100) samples, no change in quantum well emission energy or intensity was observed. This is consistent with a spontaneous-polarization-induced surface field in the c-plane case and verifies the absence of the spontaneous polarization field in the nonpolar (1100) direction.

  15. Surfactant effects on GaAs-Ge heterostructures

    NASA Astrophysics Data System (ADS)

    Karlina, L. B.; Vlasov, A. S.; Ber, B. Y.; Kazanthev, D. Yu.; Marukhina, E. P.

    2013-10-01

    A study of the effect of isoelectronic surfactants (In and P) on the photoluminescence and photovoltaic characteristics of GaAs-Ge heterostructures is presented. The surfactants were introduced into the structure by simultaneous post-growth diffusion. A GaAs photoluminescence spectra analysis was performed via a layer-by-layer etching procedure. It is shown that the effect of the surfactants is observed over a wide concentration range from 3×1017 to 1×1020 cm-3. The effects of the In and P passivation of nonradiative recombination centers are observed. A p-n junction was formed via phosphorus diffusion. PV conversion efficiency of 3.2% for the 900-1840 nm wavelength region has been registered under 40-400x concentrated sunlight (AM1.5D low-AOD).

  16. Preparation and properties of sliver and nitrogen co-doped TiO{sub 2} photocatalyst

    SciTech Connect

    Zhang, Ying; Zhang, Jin; Zhu, Zhongqi; Yan, Ningning; Liu, Qingju

    2013-11-15

    Graphical abstract: - Highlights: • The silver and nitrogen co-doped TiO{sub 2} photocatalysts were prepared and characterized. • The light absorption threshold wavelength of Ag–N–TiO{sub 2} is red-shifted to visible light. • The recombination of the photo-generated electrons and holes of Ag–N–TiO{sub 2} is inhibited. • The photocatalytic activity of Ag–N–TiO{sub 2} is remarkable improved. - Abstract: TiO{sub 2} photocatalysts co-doped with different content of Ag and N were prepared by sol–gel method combined with microwave chemical method. The samples were analyzed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), transmission electron microscope (TEM), ultraviolet–visible diffuse reflectance spectrum (UV–vis) and photo-luminescence emission spectrum (PL). The photocatalytic activity was investigated by photocatalytic degradation of methylene blue (MB) under irradiation of fluorescent lamp. The results indicate that Ag and N co-doping can restrain the increase of grain size, broaden the absorption spectrum to visible light region, and inhibit the recombination of the photo-generated electron–hole pairs. Moreover, the photocatalytic activity of Ag–N–TiO{sub 2} in MB degradation is remarkable improved. The degradation rate of the sample with Ag:TiO{sub 2} = 0.05 at%, N:TiO{sub 2} = 18.50 wt% in 5 h is 93.44%, which is much higher than that of Degussa P25 (39.40%)

  17. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Jiang, R.; Shen, X.; Chen, J.; Duan, G. X.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Kaun, S. W.; Kyle, E. C. H.; Speck, J. S.; Pantelides, S. T.

    2016-07-01

    Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing ON-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare ON can naturally account for the "super-recovery" in the peak transconductance.

  18. Magnetic and dielectric studies of Li-Cu co-doped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Vivek, S.; Ajith, S. K.; Chitralekha, C. S.; Nair, Swapna S.

    2016-05-01

    Room temperature ferromagnetism has been observed in Li-Cu co-doped ZnO nanoparticles prepared by sol-gel route. Our studies indicated that the observed ferromagnetism is a surface phenomenon which depends on oxygen vacancy and the nature of the dopants. Dependence of ferromagnetism on the annealing temperature indicated the role of oxygen vacancy, and the decrease in coercivity as the particle size increases indicates the surface dependence of ferromagnetism. It is found that the addition of dopants also enhanced ferromagnetism. Dielectric studies indicated an increase in dielectric constant as the doping concentration is increased.

  19. Luminescence studies of rare-earth doped and Co-doped hydroxyapatite

    NASA Astrophysics Data System (ADS)

    Vasugi, G.; Thamizhavel, A.; Girija, E. K.

    2012-06-01

    Rare-earth doped and co-doped hydroxyapatite (Eu: HA, Eu-Y: HA) were prepared by wet precipitation method by using CTAB as the organic modifier. The synthesized samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), Scanning electron microscopy (SEM) and Photoluminescence spectra (PL). Upon excitation at 350 nm the samples Eu: HA and Eu-Y: HA shows the emission band in the visible region, which makes it suitable for potential application such as bio-imaging.

  20. Ferromagnetism in Co-doped (La,Sr)TiO3

    SciTech Connect

    Fix, T.; Liberati, M.; Aubriet, H.; Sahonta, S.-L.; Bali, R.; Becker, C.; Ruch, D.; MacManus-Driscoll, J.L.; Arenholz, E.; Blamire, M.G.

    2009-04-21

    The origin of ferromagnetism in Co-doped (La,Sr)TiO{sub 3} epitaxial thin films is discussed. While the as-grown samples are not ferromagnetic at room temperature or at 10 K, ferromagnetism at room temperature appears after annealing the films in reducing conditions and disappears after annealing in oxidizing conditions. Magnetic measurements, x-ray absorption spectroscopy, x-ray photoemission spectroscopy and transmission electron microscopy experiments indicate that within the resolution of the instruments the activation of the ferromagnetism is not due to the presence of pure Co.

  1. Nitrogen and sulfur co-doped carbon dots with strong blue luminescence

    NASA Astrophysics Data System (ADS)

    Ding, Hui; Wei, Ji-Shi; Xiong, Huan-Ming

    2014-10-01

    Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe3+ ions.Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a

  2. Preparation of hybrid Josephson junctions on Co-doped Ba-122 single crystals

    NASA Astrophysics Data System (ADS)

    Reifert, D.; Hasan, N.; Döring, S.; Schmidt, S.; Monecke, M.; Feltz, M.; Schmidl, F.; Tympel, V.; Wisniewski, W.; Mönch, I.; Wolf, T.; Seidel, P.

    2014-08-01

    In this paper we present a method for processing a hybrid Josephson junction on Co-doped BaF{{e}_{2}}A{{s}_{2}} (Ba-122) single crystals with a thin film Pb-counter electrode and a barrier layer of Ti{{O}_{x}}. This includes the leveling and polishing of the crystals and structuring them with thin film techniques such as photo lithography, sputtering and ion beam etching. The junctions show hysteretical resistively and capacitively shunted junction-like I-V characteristics with an {{I}_{c}}{{R}_{n}}-product of about 800 \\mu V.

  3. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    SciTech Connect

    Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.; Zhurbina, I. A.; Domashevskaya, E. P.; Arsent'ev, I. N. Shishkov, M. V.

    2009-08-15

    In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

  4. Anions (N,S) mono-doping and co-doping influences on electronic structures and optical properties of InNbO4

    NASA Astrophysics Data System (ADS)

    Shi, Haifeng; Zhou, Changping; Zhang, Chengliang; Ye, Enjia

    2016-04-01

    In this paper, the electronic structures and optical properties of N-doped, S-doped and N/S-codoped InNbO4 were systematically investigated by first-principles calculations based on density functional theory (DFT). As for N-doped InNbO4, the acceptor N-2p states would introduce on the upper edge of the valence band (O-2p). While S-3p states would mix with O-2p states when O atom was replaced by S atom in InNbO4. As for N/S-codoped InNbO4, N-2p states mixed with S-3p states above the valence band, resulting in the energy bandgap further narrower in contrast to those of the individual N(S)-doped InNbO4. The optical absorption edge of N/S-codoped InNbO4 displayed an obvious redshift and was successfully extended to visible light region due to the synergistic effect of N/S co-doping. This research proposed that N/S co-doping was a promising method to improve the photocatalytic properties of InNbO4.

  5. Synthesis and down-conversion luminescence properties of Er3+/Yb3+ co-doped AlF3-PbF2-CaF2 powders

    NASA Astrophysics Data System (ADS)

    Liu, Fangchao; Han, Qun; Liu, Tiegen; Chen, Yaofei; Du, Yang; Yao, Yunzhi

    2015-08-01

    Er3+/Yb3+ co-doped oxy-fluoride powders with varying Er/Yb concentration were prepared by a melt quenching method at various sintering temperature. The effect of the Er/Yb doped concentration and sintering temperature were analyzed by using optical absorption and emission techniques. The Judd-Ofelt theory has been used to evaluate the three intensity parameters (Ωλ, where λ = 2, 4 and 6) and calculate the oscillator strengths (fc). Ultraviolet-to-visible emissions were observed under the excitation of a 325 nm CW laser. It was found that the down-conversion fluorescence intensity changes with the sintering temperature and Er/Yb content ratio, the results were explained with the level transitions in Er3+/Yb3+ co-doped systems. The intensity ratios (intensity of 437 nm as reference) of the luminescence spectra that the samples sintered at various temperature are relevant to Ω6 parameter which indicates the vibration amplitude of the Er-O distance. The sintering temperature also has an influence on the intensity ratios via affecting the thermalization of the excited 4I15/2 level.

  6. 3D coral-like nitrogen-sulfur co-doped carbon-sulfur composite for high performance lithium-sulfur batteries.

    PubMed

    Wu, Feng; Li, Jian; Tian, Yafen; Su, Yuefeng; Wang, Jing; Yang, Wen; Li, Ning; Chen, Shi; Bao, Liying

    2015-01-01

    3D coral-like, nitrogen and sulfur co-doped mesoporous carbon has been synthesized by a facile hydrothermal-nanocasting method to house sulfur for Li-S batteries. The primary doped species (pyridinic-N, pyrrolic-N, thiophenic-S and sulfonic-S) enable this carbon matrix to suppress the diffusion of polysulfides, while the interconnected mesoporous carbon network is favourable for rapid transport of both electrons and lithium ions. Based on the synergistic effect of N, S co-doping and the mesoporous conductive pathway, the as-fabricated C/S cathodes yield excellent cycling stability at a current rate of 4 C (1 C = 1675 mA g(-1)) with only 0.085% capacity decay per cycle for over 250 cycles and ultra-high rate capability (693 mAh g(-1) at 10 C rate). These capabilities have rarely been reported before for Li-S batteries. PMID:26288961

  7. Tailoring the electronic and optical properties of anatase TiO2 by (S, Nb) co-doping from a DFT plus U calculation

    NASA Astrophysics Data System (ADS)

    Ren, Dahua; Li, Huiran; Cheng, Xinlu

    2015-12-01

    The geometrical structure, defect formation, electronic and optical properties of S-doped, Nb-doped, and (S, Nb)-codoped anatase TiO2 were successfully calculated by the first-principles plane-wave ultrasoft pseudopotential method based on the density functional theory with plus U method. Firstly, the geometrical structure demonstrates that the (S, Nb) co-doping can effectively induce lattice distortion and reduce the recombination of electron-hole pairs. Note that the (S, Nb)-codoped system further reduces the band gap compared with pure and mono-doped TiO2 due to the mixture of S 2p and Nb 4d states appears in the gap, which results in an obvious red-shift in the optical absorption spectra and improves the photocatalytic activity. Moreover, the (S, Nb) co-doping should be grown under Ti-rich conditions while S or Nb mono-doping is expected to be easier under O-rich conditions. The above results would be beneficial to further developing for titanium dioxide photocatalyst.

  8. Role of glass structure in defining the chemical dissolution behavior, bioactivity and antioxidant properties of zinc and strontium co-doped alkali-free phosphosilicate glasses.

    PubMed

    Kapoor, Saurabh; Goel, Ashutosh; Tilocca, Antonio; Dhuna, Vikram; Bhatia, Gaurav; Dhuna, Kshitija; Ferreira, José M F

    2014-07-01

    We investigated the structure-property relationships in a series of alkali-free phosphosilicate glass compositions co-doped with Zn(2+) and Sr(2+). The emphasis was laid on understanding the structural role of Sr(2+) and Zn(2+) co-doping on the chemical dissolution behavior of glasses and its impact on their in vitro bioactivity. The structure of glasses was studied using molecular dynamics simulations in combination with solid state nuclear magnetic resonance spectroscopy. The relevant structural properties are then linked to the observed degradation behavior, in vitro bioactivity, osteoblast proliferation and oxidative stress levels. The apatite-forming ability of glasses has been investigated by X-ray diffraction, infrared spectroscopy and scanning electron microscopy-energy-dispersive spectroscopy after immersion of glass powders/bulk in simulated body fluid (SBF) for time durations varying between 1h and 14 days, while their chemical degradation has been studied in Tris-HCl in accordance with ISO 10993-14. All the glasses exhibit hydroxyapatite formation on their surface within 1-3h of their immersion in SBF. The cellular responses were observed in vitro on bulk glass samples using human osteosarcoma MG63 cell line. The dose-dependent cytoprotective effect of glasses with respect to the concentration of zinc and strontium released from the glasses is also discussed. PMID:24709542

  9. Copper and cerium co-doped titanium dioxide on catalytic photo reduction of carbon dioxide with water: Experimental and theoretical studies

    NASA Astrophysics Data System (ADS)

    Luo, Dongmei; Bi, Ye; Kan, Wei; Zhang, Ning; Hong, Sanguo

    2011-05-01

    The catalytic activities of copper and cerium co-doped titanium dioxide were studied experimentally and theoretically in the synthesis of methanol by the photo reduction of carbon dioxide with water firstly. Photo catalysts copper and cerium co-doped titanium dioxide were prepared via the equivalent-volume incipient wetness impregnation method. The catalysts were characterized by XRD, Raman, BET, and electrochemistry analyses. The catalytic properties were determined in the synthesis of methanol from CO 2 in the aqueous solution. The experimental results suggested that Cu/Ce-TiO 2 catalysts obviously enhanced the efficiency of the photocatalytic reduction of CO 2. The methanol yield could reach up to 180.3 μmol/g-cat rapidly. The different effects of copper and cerium on the surface of titanium dioxide have been calculated at the Becke's three-parameter hybrid exchange functional together with the Lee-Yang-Parr correlation functional (B3LYP) level. Our results revealed that Ce atoms affect the reaction more profoundly than Cu atoms do. Ce atoms activated H 2O and CO 2 molecules, while Cu atoms act as the channel of photoelectrons in real time and prevent the recombination of electrons and holes.

  10. 3D coral-like nitrogen-sulfur co-doped carbon-sulfur composite for high performance lithium-sulfur batteries

    PubMed Central

    Wu, Feng; Li, Jian; Tian, Yafen; Su, Yuefeng; Wang, Jing; Yang, Wen; Li, Ning; Chen, Shi; Bao, Liying

    2015-01-01

    3D coral-like, nitrogen and sulfur co-doped mesoporous carbon has been synthesized by a facile hydrothermal-nanocasting method to house sulfur for Li–S batteries. The primary doped species (pyridinic-N, pyrrolic-N, thiophenic-S and sulfonic-S) enable this carbon matrix to suppress the diffusion of polysulfides, while the interconnected mesoporous carbon network is favourable for rapid transport of both electrons and lithium ions. Based on the synergistic effect of N, S co-doping and the mesoporous conductive pathway, the as-fabricated C/S cathodes yield excellent cycling stability at a current rate of 4 C (1 C = 1675 mA g−1) with only 0.085% capacity decay per cycle for over 250 cycles and ultra-high rate capability (693 mAh g−1 at 10 C rate). These capabilities have rarely been reported before for Li-S batteries. PMID:26288961

  11. 3D coral-like nitrogen-sulfur co-doped carbon-sulfur composite for high performance lithium-sulfur batteries

    NASA Astrophysics Data System (ADS)

    Wu, Feng; Li, Jian; Tian, Yafen; Su, Yuefeng; Wang, Jing; Yang, Wen; Li, Ning; Chen, Shi; Bao, Liying

    2015-08-01

    3D coral-like, nitrogen and sulfur co-doped mesoporous carbon has been synthesized by a facile hydrothermal-nanocasting method to house sulfur for Li-S batteries. The primary doped species (pyridinic-N, pyrrolic-N, thiophenic-S and sulfonic-S) enable this carbon matrix to suppress the diffusion of polysulfides, while the interconnected mesoporous carbon network is favourable for rapid transport of both electrons and lithium ions. Based on the synergistic effect of N, S co-doping and the mesoporous conductive pathway, the as-fabricated C/S cathodes yield excellent cycling stability at a current rate of 4 C (1 C = 1675 mA g-1) with only 0.085% capacity decay per cycle for over 250 cycles and ultra-high rate capability (693 mAh g-1 at 10 C rate). These capabilities have rarely been reported before for Li-S batteries.

  12. [Preparation and luminescence properties of Tb3+ ion and Na2WO4 co-doped SiO2 materials].

    PubMed

    Wang, Xi-Gui; Li, Xia

    2008-02-01

    Tb3+ and Na2 WO4 co-doped SiO2 materials were prepared by sol-gel method and the structure of materials were measured by DTA-TG, IR and XRD techniques. The results indicate that the materials were in amorphous phase andthe Si-O-Si bond was still observed in samples annealed at 800 degrees C. The influence of Na2 WO4 on luminescence properties of terbium glasses was investigated by three-dimension fluorescence spectra, excitation and emission spectra. It is approve that when sample excited by 230 nm showed the characteristic emission peaks of terbium corresponding to 5D4-(7) Fj (j = 4, 5, 6) and 5 D3 -(7)Fj (j = 4, 5, 6) transitions. Doping Na2 WO4 has less influence with the emission position of SiO2 materials with terbium, but has a great effect with the emission intensity. It is find that the blue transition of 5D4-7F6 was activated and the green transition of 5D4-7F5 was quenched and the materials radiate green blue fluorescence light under ultraviolet light. The mechanism of sample was analyzed by the energy levels of Tb3+ and Na2 WO4 co-doped glasses. PMID:18478999

  13. Upconversion and pump saturation mechanisms in Er{sup 3+}/Yb{sup 3+} co-doped Y{sub 2}Ti{sub 2}O{sub 7} nanocrystals

    SciTech Connect

    Wang, Fengxiao; Song, Feng Zhang, Gong; Han, Yingdong; Li, Qiong; Tian, Jianguo; Ming, Chengguo

    2014-04-07

    The Er{sup 3+}/Yb{sup 3+} co-doped Y{sub 2}Ti{sub 2}O{sub 7} nanocrystals were synthesized by the sol–gel method. X-ray diffraction, transmission electronic microscopy, and photoluminescence spectra were measured to verify the Y{sub 2}Ti{sub 2}O{sub 7} nanocrystalline produced in the sample annealed at 800 °C. The anomalous slopes of the fitted line in the log-log plots for upconversion emissions and the pump-saturation effect of near-infrared emission were observed in the nanocrystalline samples. A theoretical model of practical Er{sup 3+}/Yb{sup 3+} co-doped system based on the rate equations were put forward and explained the experimental phenomena well.

  14. Substantial enhancement in intrinsic coercivity on M-type strontium hexaferrite through the increase in magneto-crystalline anisotropy by co-doping of group-V and alkali elements

    SciTech Connect

    Ahn, Kyunghan Ryu, Byungki; Korolev, Dmitry; Jae Kang, Young

    2013-12-09

    The effect of d{sup 1} impurity doping in Sr-hexaferrite (SrM) on the magnetic anisotropy is investigated. First-principles calculations revealed that group-V elements (V, Nb) are stabilized with co-doping of alkali elements. Na{sup 1+}/K{sup 1+} doping at Sr{sup 2+}-site is found to be critical to form the d{sup 1} impurities at Fe-site. Experimentally, Na–V doped SrM shows the intrinsic coercivity of ∼5.4 kOe, which is ∼300% enhancement compared to undoped SrM and comparable value to La–Co co-doped SrM. Finally, the spin-orbit coupling from non-vanishing angular momentum of d{sup 1} impurity in SrM should be a main factor for such a substantial improvement of intrinsic coercivity.

  15. Enhanced photo-catalytic activity of Sr and Ag co-doped TiO2 nanoparticles for the degradation of Direct Green-6 and Reactive Blue-160 under UV & visible light.

    PubMed

    Naraginti, Saraschandra; Thejaswini, T V L; Prabhakaran, D; Sivakumar, A; Satyanarayana, V S V; Arun Prasad, A S

    2015-10-01

    This work is focused on sol-gel synthesis of silver and strontium co-doped TiO2 nanoparticles and their utilization as photo-catalysts in degradation of two textile dyes. Effect of pH, intensity of light, amount of photo-catalyst, concentration of dye, sensitizers, etc., were studied to optimize conditions for obtaining enhanced photo-catalytic activity of synthesized nanoparticles. XRD, BET, HR-TEM, EDAX and UV-Vis (diffused reflectance mode) techniques were used to characterize the nanoparticles. Interestingly, band gap of Sr and Ag co-doped TiO2 nanoparticles showed considerable narrowing (2.6 eV) when compared to Ag doped TiO2 (2.7 eV) and undoped TiO2 (3.17 eV) nanoparticles. Incorporation of Ag and Sr in the lattice of TiO2 could bring isolated energy levels near conduction and valence bands thus narrowing band gap. The XRD analysis shows that both Ag and Sr nanoparticles are finely dispersed on the surface of titania framework, without disturbing its crystalline structure. TEM images indicate that representative grain sizes of Ag-doped TiO2 & Sr and Ag co-doped TiO2 nanoparticles are in the range of 8-20 nm and 11-25 nm, respectively. Effective degradation of Direct Green-6 (DG-6) and Reactive Blue-160 (RB-160) under UV and visible light has been achieved using the photo-catalysts. Sr and Ag co-doped TiO2 photo-catalysts showed higher catalytic activity during degradation process in visible region when compared to Ag-doped and undoped TiO2 nanoparticles which could be attributed to the interactive effect caused by band gap narrowing and enhancement in charge separation. For confirming degradation of the dyes, total organic carbon (TOC) content was monitored periodically. PMID:25983059

  16. Crossover between weak anti-localization and weak localization by Co doping and annealing in gapless PbPdO{sub 2} and spin gapless Co-doped PbPdO{sub 2}

    SciTech Connect

    Choo, S. M.; Lee, K. J.; Park, S. M.; Park, G. S.; Jung, M. H.; Yoon, J. B.; You, C.-Y.

    2015-04-27

    The magnetotransport properties of Pb(Pd,Co)O{sub 2} and PbPdO{sub 2} thin films were investigated. In magnetoconductance curves, we observed a crossover between weak anti-localization (WAL) and weak localization (WL) depending on the annealing and Co doping in PbPdO{sub 2} thin films. For the Pb(Pd,Co)O{sub 2} case showing WAL signals, the ex-situ annealing weakens the Pd-O hybridization by stabilizing Co{sup 3+} states and generating Pd{sup 1+} states, instead of Pd{sup 2+}, so that the spin-orbit coupling (SOC) strength is significantly reduced. It causes the dominant magnetotransport mechanism change from WAL to WL. This annealing effect is compared with the PbPdO{sub 2} case, which possesses WL signals. The annealing process stabilizes the oxygen states and enhances the Pd-O hybridization, and consequently the SOC strength is enhanced. Our experimental results are well explained by the Hikami-Larkin-Nagaoka theory in terms of two important physical parameters; SOC strength-related α and inelastic scattering length l{sub ϕ}.

  17. Enrichment of Pyrrolic Nitrogen by Hole Defects in Nitrogen and Sulfur Co-Doped Graphene Hydrogel for Flexible Supercapacitors.

    PubMed

    Tran, Ngoc Quang; Kang, Bong Kyun; Woo, Moo Hyun; Yoon, Dae Ho

    2016-08-23

    The effect of the doping configuration and concentration of nitrogen (N) and sulfur (S) on the electrochemical performance of 3 D N and S co-doped hole defect graphene hydrogel (NS-HGH) electrodes is investigated. Surprisingly, by introducing a hole defect on the graphene surface, the difference in the doping concentrations of N and S can be used to effectively modulate the electrochemical behavior of the NS-HGH. The hole defects provide a rapid ion diffusion path. Finally, we showed that the intriguing specific capacitance (536 F g(-1) ) of the NS-HGH could enhance the overall performance of the pseudocapacitance and electric double layer capacitance. The rational design of the NS-HGH-based flexible solid state supercapacitor results in not only outstanding electrochemical performance with a maximum energy density of 14.8 Wh kg(-1) and power density of 5.2 KW kg(-1) but also in extraordinary mechanical flexibility and excellent cycle stability. PMID:27460556

  18. Magnetic and magnetocaloric properties of Ba and Ti co-doped SrRuO{sub 3}

    SciTech Connect

    Sarkar, Babusona; Dalal, Biswajit; Dev Ashok, Vishal; De, S. K.

    2014-12-28

    Temperature evolution of magnetic properties in Ba and Ti doped SrRuO{sub 3} has been investigated to observe the effects of larger ionic radius Ba at Sr site and isovalent nonmagnetic impurity Ti at Ru site. Ionic radius mismatch and different electronic configuration in comparison with Ru modify Sr(Ba)-O and Ru(Ti)-O bond lengths and Ru-O-Ru bond angle. The apical and basal Ru-O-Ru bond angles vary significantly with Ti doping. Ferromagnetic Curie temperature decreases from 161 K to 149 K monotonically with Ba (10%) and Ti (10%) substitutions at Sr and Ru sites. The zero field cooled (ZFC) magnetization reveals a prominent peak which shifts towards lower temperature with application of magnetic field. The substitution of tetravalent Ti with localized 3d{sup 0} orbitals for Ru with more delocalized 4d{sup 4} orbitals leads to a broad peak in ZFC magnetization. A spontaneous ZFC magnetization becomes negative below 160 K for all the compositions. The occurrence of both normal and inverse magnetocaloric effects in Ba and Ti co-doped SrRuO{sub 3} makes the system more interesting.

  19. Hydrothermal growth and conductivity enhancement of (Al, Cu) co-doped ZnO nanorods thin films

    NASA Astrophysics Data System (ADS)

    Chakraborty, Mohua; Mahapatra, Preetilata; Thangavel, R.

    2016-05-01

    The incorporation of Al, Cu co-doping in ZnO host lattice plays an important role in modification of structural, optical and electrical properties in optoelectronic devices. In the present work, we were grown one dimensional ZnO nanorods (NRs) doped with different concentration of Al (0%~5%) and Cu was kept 20 M% on ITO glass substrates using a facile hydrothermal method, and investigated the effect of the codoping on the surface morphology and the electrical and optical performances of the doped ZnO NRs as photo anodes for solar water splitting applications. The crystallite size of NRs shows tuning in the band gap between 3.194 (Zn0.79Al0.01Cu0.2O) to 3.212 eV (Zn0.75Al0.05Cu0.2O) with Aluminium doping concentration and a remarkable improvement in current density (J) from 0.05 mA/cm2 to 4.98 mA/cm2 was achieved by incorporating Al and Cu has a critical effect of ZnO nanorods.

  20. Nitrogen and sulfur co-doped carbon dots for highly selective and sensitive detection of Hg (II) ions.

    PubMed

    Li, Libo; Yu, Bin; You, Tianyan

    2015-12-15

    Nitrogen and sulfur co-doped carbon dots (N,S/C-dots) with high fluorescence quantum yields (FLQY, 25%) was successfully synthesized by a one-step microwave-assisted method. In comparison with nitrogen doped C-dots (N/C-dots) prepared using the same method, the resulting N,S/C-dots featured small particle size, uniform surface state, insensitive FL properties to excitation wavelengths and environmental conditions, negligible cytotoxicity and excellent biocompatibility. Simultaneous doping of N and S effectively promoted electron-transfer and coordination interaction between N,S/C-dots and Hg(2+). Thus, when used as fluorescence probe for Hg(2+) label-free detection, the resulting N,S/C-dots showed good detection sensitivity and ion selectivity. The limit of detection was 2 μM; among 15 metal ions investigated, only Fe(3+) showed interference to the Hg(2+) detection. Fortunately, this interference could be effectively shielded using a chelating agent sodium hexametaphoshpate. The applicability of N,S/C-dots as fluorescence probe for Hg(2+) detection in lake water and tap water was demonstrated. Finally, based on its favorable features of negligible cytotoxicity and excellent biocompatibility, the N,S/C-dots were successfully applied to probe Hg(2+) in living cells, which broaden its application in biological system. PMID:26143466

  1. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect

    Aleshkin, V. Ya.; Afonenko, A. A.; Dikareva, N. V.; Dubinov, A. A. Kudryavtsev, K. E.; Morozov, S. V.; Nekorkin, S. M.

    2013-11-15

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  2. Synthesis of boron, nitrogen co-doped porous carbon from asphaltene for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Zhou, Ying; Wang, Dao-Long; Wang, Chun-Lei; Jin, Xin-Xin; Qiu, Jie-Shan

    2014-08-01

    Oxidized asphaltene (OA), a thermosetting material with plenty of functional groups, is synthesized from asphaltene (A) using HNO3/H2SO4 as the oxidizing agent. Boron, nitrogen co-doped porous carbon (BNC—OA) is prepared by carbonization of the mixture of boric acid and OA at 1173 K in an argon atmosphere. X-ray photoelectron spectroscopy (XPS) characterization reveals that the BNC—OA has a nitrogen content of 3.26 at.% and a boron content of 1.31 at.%, while its oxidation-free counterpart (BNC—SA) has a nitrogen content of 1.61 at.% and a boron content of 3.02 at.%. The specific surface area and total pore volume of BNC—OA are 1103 m2·g-1 and 0.921 cm3·g-1, respectively. At a current density of 0.1 A·g-1, the specific capacitance of BNC-OA is 335 F·g-1 and the capacitance retention can still reach 83% at 1 A·g-1. The analysis shows that the superior electrochemical performance of the BNC—OA is attributed to the pseudocapacitance behavior of surface heteroatom functional groups and an abundant pore-structure. Boron, nitrogen co-doped porous carbon is a promising electrode material for supercapacitors.

  3. Ferromagnetism studies of Cu-doped and (Cu, Al) co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Wu, S. Z.; Yang, H. L.; Xu, X. G.; Miao, J.; Jiang, Y.

    2011-01-01

    We have studied the room temperature ferromagnetism (FM) in Cu-doped and (Cu, Al) co-doped ZnO thin films which were grown on quartz substrates by chemical method based on a sol-gel process combining with spin-coating technology. X-ray diffraction (XRD) patterns demonstrate that both the Cu-doped and (Cu, Al) co-doped ZnO films have the hexagonal wurtzite structure with c-axis orientation. Alternating Gradient Magnetometer (AGM) measurements confirm that all the doped ZnO samples are ferromagnetic at room temperature. When the doped Cu content is 1 %, the Cu-doped ZnO film has the strongest FM. The FM significantly decreases in the (Cu, Al) co-doped ZnO films. The doping of Al ions suppresses the FM induced by the doped Cu ions.

  4. Thermochromic properties of Sn, W co-doped VO2 nanostructured thin film deposited by pulsed laser deposition.

    PubMed

    Hur, M G; Masaki, T; Yoon, D H

    2014-12-01

    Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping. PMID:25970986

  5. Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

    SciTech Connect

    Vinokurov, D. A. Vasilyeva, V. V.; Kapitonov, V. A.; Lyutetskiy, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Slipchenko, S. O.; Stankevich, A. L.; Shamakhov, V. V.; Fetisova, N. V.; Tarasov, I. S.

    2010-02-15

    The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the threshold current density, internal quantum efficiency of stimulated emission, and differential quantum efficiency are improved as the active region thickness increases. It is demonstrated that the maximum attainable optical emission power of a semiconductor laser and the internal quantum efficiency of photoluminescence are the most sensitive to defect formation in the heterostructure and become lower as the critical thickness of the strained In{sub x}Ga{sub 1-x} As layer in the active region is exceeded.

  6. Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

    SciTech Connect

    Chan, K.T.; Lightner, M.J.; Patterson, G.A. ); Yu, K.M. )

    1990-05-14

    Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 {degree}C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 {degree}C under two different As{sub 4} overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As{sub 4} flux on the cation surface mobility during growth of the InGaAs layer.

  7. Leakage effects in n-GaAs MESFET with n-GaAs buffer layer

    NASA Technical Reports Server (NTRS)

    Wang, Y. C.; Bahrami, M.

    1983-01-01

    Whereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.

  8. GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect

    Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

    1999-03-02

    A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

  9. Photoinduced effect in Ga Ge S based thin films

    NASA Astrophysics Data System (ADS)

    Messaddeq, S. H.; Li, M. Siu; Inoue, S.; Ribeiro, S. J. L.; Messaddeq, Y.

    2006-10-01

    Glassy films of Ga 10Ge 25S 65 with 4 μm thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 μm (Δ V/ V ≈ 30%) is observed for composition Ga 10Ge 25S 65 exposed during 180 min and 3 mW/cm 2 power density. The optical absorption edge measured for the film Ge 25Ga 10S 65 above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (Δ Eg = 440 meV) than Δ Eg induced by above bandgap illumination (Δ Eg = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Δ n = -0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented.

  10. Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures

    NASA Astrophysics Data System (ADS)

    Yang, D.; Garland, J. W.; Raccah, P. M.; Coluzza, C.; Frankl, P.; Capizzi, M.; Chambers, F.; Devane, G.

    1990-12-01

    Highly doped semiconducting heteroepitaxial structures are commonly found in advanced devices. It is difficult to interpret quantitatively the results of optical measurements on such structures because the strong built-in electric fields present invalidate the low-field theories usually used to interpret those results. We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure with a highly n-doped GaAs substrate and cap, before and after hydrogenation. We also have developed a new, improved microscopic theoretical treatment of the effects of strong fields on the local dielectric function and have used that treatment to evaluate quantitatively the effect of hydrogenation on the densities of shallow donor levels and of deep traps in the GaAs cap and to find the interface charges and band-pinning levels in the resonant tunneling junction.

  11. Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge

    NASA Astrophysics Data System (ADS)

    Bosi, Matteo; Attolini, Giovanni; Ferrari, Claudio; Frigeri, Cesare; Calicchio, Marco; Rossi, Francesca; Vad, Kálmán; Csik, Attila; Zolnai, Zsolt

    2011-03-01

    We studied the diffusion of Ge, As and Ga in GaAs/Ge and Ge/GaAs epilayers grown at different temperatures by metal-organic vapor phase epitaxy using iso-butylgermane, arsine and trimethylgallium in hydrogen atmosphere at low pressure. The use of low temperature buffer layers was investigated in order to overcome the diffusion problem. High-resolution X-ray diffraction and transmission electron microscopy were used to assess the crystal quality, while secondary neutral mass spectrometry has been employed to investigate diffusion profiles in the samples. As it is well known, the diffusivity of the atoms (e.g. Ga, As, Ge) and intermixing of layers during sample preparation strongly depend on the substrate temperature. We found that the use of a low temperature GaAs buffer layer reduced the diffusion in GaAs/Ge epitaxy at 600 °C; while a Ge low temperature buffer layer was not effective in reducing the interdiffusion in Ge/GaAs epitaxy at 700 °C.

  12. TlGaInNAs/GaAs double quantum well structures: Effect of barrier layers and substrate orientation

    NASA Astrophysics Data System (ADS)

    Krishnamurthy, D.; Matsumoto, T.; Fujiwara, A.; Hasegawa, S.; Asahi, H.

    2007-04-01

    The quinary TlGaInNAs-based double quantum well (DQW) structures were grown on GaAs substrates by electron cyclotron resonance (ECR)-MBE and the samples were probed by secondary ion mass spectroscopy (SIMS). Light emitting diodes (LEDs) were fabricated using these DQW wafers and their electroluminescence (EL) behaviors were studied at different temperatures. The effects of different barrier layers and substrate orientations on the amount of Tl incorporation and on the temperature dependency of the EL peak wavelengths of the LEDs were studied. Higher incorporation of Tl into the quantum well (QW) region and the ensuing change in the temperature dependency of the peak wavelengths owing to the TlGaAs barrier layer are reported. GaAs substrates having (3 1 1)B orientation were found to allow more Tl incorporation as compared to (1 0 0) and (3 1 1)A oriented substrates. The LEDs fabricated out of the TlGaInNAs/TlGaAs/(3 1 1)B GaAs DQW structures showed the least temperature dependency of the EL peak wavelengths exemplifying the usefulness of Tl in the QW as well as barrier region.

  13. Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

    PubMed Central

    2012-01-01

    In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. PMID:22937963

  14. Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.

    PubMed

    Duque, Carlos M; Mora-Ramos, Miguel E; Duque, Carlos A

    2012-01-01

    : In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail. PMID:22937963

  15. Competition Between Antiferromagnetism and Ferromagnetism in Sr2RuO4 Probed by Mn and Co Doping

    PubMed Central

    Ortmann, J. E.; Liu, J. Y.; Hu, J.; Zhu, M.; Peng, J.; Matsuda, M.; Ke, X.; Mao, Z. Q.

    2013-01-01

    Spin-triplet superconductivity in Sr2RuO4 has attracted enormous interest. Like other unconventional superconductors, superconductivity in Sr2RuO4 is in close proximity to magnetic instability. Undoped Sr2RuO4 exhibits incommensurate antiferromagnetic (AFM) fluctuations, which can evolve into static, short-range AFM order via Ti doping. Moreover, weak ferromagnetic (FM) coupling in Sr2RuO4 has also been suggested by NMR/neutron scattering experiments and studies on Ca2−xSrxRuO4 and Sr2−yLayRuO4, implying orbital dependent magnetism. We report bulk static, short-range FM order in Sr2RuO4 triggered by <2% Co doping, showing superconductivity in Sr2RuO4 is much closer to FM instability than previously reported in Ca2−xSrxRuO4. We also find Mn doping can effectively establish incommensurate AFM order, with TN ~ 50 K for 3% Mn doping. These new results place Sr2RuO4 in a unique situation where superconductivity lies directly on the borderline of two distinct magnetic states, highlighting the important role of competing magnetic fluctuations in determining superconducting properties of Sr2RuO4. PMID:24126684

  16. NIR luminescence studies on Er3+:Yb3+ co-doped sodium telluroborate glasses for lasers and optical amplifer applications

    NASA Astrophysics Data System (ADS)

    Annapoorani, K.; Murthy, N. Suriya; Marimuthu, K.

    2016-05-01

    Er3+:Yb3+ co-doped Sodium telluroborate glasses were prepared with the chemical composition (49.5-x)B2O3+25TeO2+5Li2CO3+10ZnO+10NaF+0.5Er2O3+xYb2O3 (where x= 0.1, 0.5, 1.0 and 2.0 in mol %) following the melt quenching technique. With the addition of Yb3+ ions into Er3+ ions in the prepared glasses, the absorption cross-section values were found to increase due to the effective energy transfer from 2F5/2 level of Yb3+ ions to the 4I11/2 level of Er3+ ions. The fluorescence around 1550 nm correspond to the 4I13/2→4I15/2 transition was observed under 980 nm pumping. Among the present glasses, integrated intensity was found to be higher for 1.0 mol% Yb3+ ion glass. The parameters such as stimulated emission cross- section, Gain bandwidth and quantum efficiency of the 4I13/2→4I15/2 transition was found to be higher for the NTBE1.0Y glass and the same is suggested for potential NIR lasers and optical amplifier applications.

  17. Synthesis, characterization and photocatalytic study of graphene oxide and cerium co-doped in TiO2

    NASA Astrophysics Data System (ADS)

    Li, Jia; Zhang, Quan; Zeng, Liping; He, Deliang

    2016-02-01

    The nanocomposite of titanium dioxide (TiO2) combined with graphene oxide (GO) and cerium (Ce) was successfully synthesized via sol-gel method followed by calcining at 300 °C for 2 h. The composite was characterized by X-ray diffraction, ultraviolet-visible diffuse reflectance spectroscopy, scanning electron microscopy (SEM) and Brunauer-Emmett-Teller. The photocatalytic activity was evaluated by photodegradation of methylene blue (MB) under the irradiation of xenon lamp. This study demonstrated that GO and Ce co-doped in TiO2 could broaden absorption edge to the visible light and increase surface area of samples. SEM observation showed that addition of Ce could solve the problem of the agglomeration of GO under the same experimental conditions. Moreover, the MB photocatalytic degradation rate of the composite with GO doped for 0.2 % and Ce doped for 0.6 % (mass ratio) was up to 97.7 %, which was largely attributed to the synergistic effects in the GO, Ce and TiO2 system.

  18. Preparation and Scintillating Properties of Sol-Gel Eu3+, Tb3+ Co-Doped Lu2O3 Nanopowders

    PubMed Central

    de Jesús Morales Ramírez, Ángel; Murillo, Antonieta García; de Jesús Carrillo Romo, Felipe; Hernández, Margarita García; Palmerin, Joel Moreno; Guerrero, Rosario Ruiz

    2011-01-01

    Nanocrystalline Eu3+, Tb3+ co-doped Lu2O3 powders with a maximum size of 25.5 nm were prepared by the sol-gel process, using lutetium, europium and terbium nitrates as precursors, and ethanol as a solvent. Differential thermal analysis (DTA) and infrared spectroscopy (IR) were used to study the chemical changes during the xerogel annealing. After the sol evaporation at 100 °C, the formed gel was annealed from 300 to 900 °C for 30 min under a rich O2 atmosphere, and the yielded product was analyzed by X-ray diffraction (XRD) to characterize the microstructural behavior and confirm the crystalline structure. The results showed that Lu2O3 nanopowders start to crystallize at 400 °C and that the crystallite size increases along with the annealing temperature. A transmission electron microscopy (TEM) study of samples annealed at 700 and 900 °C was carried out in order to analyze the microstructure, as well as the size, of crystallites. Finally, in regard to scintillating properties, Eu3+ dopant (5 mol%), Tb3+ codoped Lu2O3 exhibited a typical red emission at 611 nm (D°→7F2), furthermore, the effect of Tb3+ molar content (0.01, 0.015 and 0.02% mol) on the Eu3+ radioluminiscence was analyzed and it was found that the higher emission intensity corresponds to the lower Tb3+ content. PMID:22016655

  19. Structural, optical and magnetic properties of Co-doped ZnO nanorods with hidden secondary phases.

    PubMed

    Wang, Xuefeng; Zheng, Rongkun; Liu, Zongwen; Ho, Ho-Pui; Xu, Jianbin; Ringer, Simon P

    2008-11-12

    Co-doped ZnO nanorods (composition: Zn(0.955)Co(0.045)O) were grown by a simple surfactant-assisted hydrothermal technique. The morphological, structural, optical and magnetic properties of the as-prepared nanorods were investigated by means of scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-cathodoluminescence, and vibrating sample magnetometry (VSM). The results showed that the sample had rod-like morphology and that the preferential growth direction was along the c axis. While Co was successfully doped into the ZnO wurtzite lattice structure as revealed by several characterization techniques, hidden secondary phases of Zn(y)Co(3-y)O(4) (0≤y≤1) were also clearly detected by the micro-Raman spectroscopic technique. We propose that the predominant diffusion-limited Ostwald ripening crystal growth mechanism under the hydrothermal coarsening yielded such phase segregation. VSM results showed that the nanorods displayed relatively weak room-temperature ferromagnetism. We suggest that the origin of the ferromagnetism is probably due to the presence of the mixed cation valence of Co via a d-d double-exchange mechanism rather than the real doping effect. It is essential to control the crystal growth mechanism and defect states associated with the ferromagnetism in order to realize the intrinsic diluted magnetic semiconductors. PMID:21832791

  20. Preparation and scintillating properties of Sol-Gel Eu(3+), TB(3+) co-doped Lu(2)O(3) nanopowders.

    PubMed

    de Jesús Morales Ramírez, Angel; Murillo, Antonieta García; de Jesús Carrillo Romo, Felipe; Hernández, Margarita García; Palmerin, Joel Moreno; Guerrero, Rosario Ruiz

    2011-01-01

    Nanocrystalline Eu(3+), Tb(3+) co-doped Lu(2)O(3) powders with a maximum size of 25.5 nm were prepared by the sol-gel process, using lutetium, europium and terbium nitrates as precursors, and ethanol as a solvent. Differential thermal analysis (DTA) and infrared spectroscopy (IR) were used to study the chemical changes during the xerogel annealing. After the sol evaporation at 100 °C, the formed gel was annealed from 300 to 900 °C for 30 min under a rich O(2) atmosphere, and the yielded product was analyzed by X-ray diffraction (XRD) to characterize the microstructural behavior and confirm the crystalline structure. The results showed that Lu(2)O(3) nanopowders start to crystallize at 400 °C and that the crystallite size increases along with the annealing temperature. A transmission electron microscopy (TEM) study of samples annealed at 700 and 900 °C was carried out in order to analyze the microstructure, as well as the size, of crystallites. Finally, in regard to scintillating properties, Eu(3+) dopant (5 mol%), Tb(3+) codoped Lu(2)O(3) exhibited a typical red emission at 611 nm (D(°)→(7)F(2)), furthermore, the effect of Tb(3+) molar content (0.01, 0.015 and 0.02% mol) on the Eu(3+) radioluminiscence was analyzed and it was found that the higher emission intensity corresponds to the lower Tb(3+) content. PMID:22016655

  1. Hydrothermal synthesis of Yb3+, Tm3+ co-doped Gd6MoO12 and its upconversion properties

    NASA Astrophysics Data System (ADS)

    Di, Qiu-Mei; Sun, Yu-Mei; Xu, Qi-Guang; Han, Liu; Xue, Bing; Sun, Jia-Yue

    2015-06-01

    Yb3+, Tm3+ co-doped Gd6MoO12 phosphors with different morphologies are prepared by the hydrothermal method. The dendrites present different morphologies (including hexagonal prisms, spindles, and spheres) after changing the pH value and edetate disodium (EDTA) usage. It is found that each of the two factors plays a crucial role in forming different morphologies. The up-conversion (UC) luminescence is studied. Under 980-nm semiconductor laser excitation, relatively strong blue emission and weak red emission are observed. Finally, the effect of pumping power on the UC luminescence properties and the level diagram mechanism of Gd6MoO12:Yb3+/Tm3+ phosphor are also discussed. Project supported by the National Natural Science Foundation of China (Grant No. 20976002), the Beijing Natural Science Foundation, China (Grant No. 2122012), the Key Projects for Science and Technology of Beijing Education Commission, China (Grant No. KZ201310011013), and the Education and Research Fund of Guangdong Province, China (Grant No. 2011B090400100).

  2. GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

    NASA Astrophysics Data System (ADS)

    Wang, Qingpeng; Ao, Jin-Ping; Wang, Pangpang; Jiang, Ying; Li, Liuan; Kawaharada, Kazuya; Liu, Yang

    2015-04-01

    GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2·V-1·s-1. The effects of etching gas of Cl2 and SiCl4 were investigated in the gate recess process. SiCl4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2-masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

  3. Er/Yb co-doped oxy-fluoride glass-ceramics core/polymer cladding optical fibers

    NASA Astrophysics Data System (ADS)

    Czerska, E.; Świderska, M.

    2014-11-01

    Erbium/ytterbium co-doped glasses can be applied as NIR laser sources (1.55 μm) or optical amplifiers in this range. About hundred meters of Er/Yb co-doped oxy-fluoride glass-ceramics fibers have been drawn from a glass preform followed by controlled annealing. Processing temperatures (drawing and annealing) were selected upon thermal analysis results (DTA/DSC plots). Glass-ceramic structure was confirmed by the XRD measurements. Obtained fibers show good optical properties. As a cladding material polymer material (acrylic resin) is considered due to its low deposition temperature and suitable value of refractive index.

  4. Enhanced luminescence and white light emission from Eu(3+) -co-doped K3 Ca2 (SO4 )3 Cl:Dy(3+) phosphor with near visible ultraviolet excitation for white LEDs.

    PubMed

    Baig, N; Dhoble, N S; Park, K; Kokode, N S; Dhoble, S J

    2015-06-01

    The luminescent properties of europium (Eu)- and dysprosium (Dy)-co-doped K3 Ca2 (SO4 )3 Cl halosulfate phosphors were analyzed. This paper reports the photoluminescence (PL) properties of K3 Ca2 (SO4 )3 Cl microphosphor doped with Eu and Dy and synthesized using a cost-effective wet chemical method. The phosphors were characterized by X-ray diffraction and scanning electron microscopy. The CIE coordinates were calculated to display the color of the phosphor. PL emission of the prepared samples show peaks at 484 nm (blue), 575 nm (yellow), 594 nm (orange) and 617 nm (red). The emission color of the Eu,Dy-co-doped K3 Ca2 (SO4 )3 Cl halophosphor depends on the doping concentration and excitation wavelength. The addition of Eu in K3 Ca2 (SO4 )3 Cl:Dy greatly enhances the intensity of the blue and yellow peaks, which corresponds to the (4)  F9/2  → (6) H15/2 and (4)  F9/2  → (6) H13/2 transitions of Dy(3+) ions (under 351 nm excitation). The Eu(3+) /Dy(3+) co-doping also produces white light emission for 1 mol% of Eu(3+) , 1 mol% of Dy(3+) in the K3 Ca2 (SO4 )3 Cl lattice under 396 nm excitation, for which the calculated chromaticity coordinates are (0.35, 0.31). Thus, K3 Ca2 (SO4 )3 Cl co-doped with Eu/Dy is a suitable candidate for NUV based white light-emitting phosphors technology. PMID:25223265

  5. Quantum effects in electron beam pumped GaAs

    SciTech Connect

    Yahia, M. E.; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  6. Effect of GaN template layer strain on the growth of InxGa1-xN/GaN MQW light emitting diodes

    SciTech Connect

    Johnson, M.C.; Bourret-Courchesne, E.D.; Wu, J.; Liliental-Weber, Z.; Zakharov, D.N.; Jorgenson, R.J.; Ng, T.B.; McCready, D.E.; Williams, J.R.

    2004-01-15

    GaN template layer strain effects were investigated on the growth of InGaN/GaN LED devices. Seven period InGaN/GaN multiple quantum well structures were deposited on 5{micro}m and 15{micro}m GaN template layers. It was found that the electroluminescence emission of the 15{micro}m device was red-shifted by approximately 132meV. Triple-axis X-Ray Diffraction and Cross-Sectional Transmission Electron Microscopy show that the 15{micro}m templay layer device was virtually unstrained while the 5{micro}m layer experienced tensile strain. Dynamic Secondary Ion Mass Spectrometry depth profiles show that the 15{micro}m template layer device had an average indium concentration of 11% higher than that of the 5{micro}m template layer device even though the structures were deposited during the same growth run. It was also found that the 15{micro}m layer device had a higher growth rate than the 5{micro}m template layer device. This difference in indium concentration and growth rate was due to changes in thermodynamic limitations caused by strain differences in the template layers.

  7. Substrate misorientation effects on epitaxial GaInAsSb

    SciTech Connect

    Wang, C.A.; Choi, H.K.; Oakley, D.C.; Charache, G.W.

    1997-12-01

    The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

  8. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  9. The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates

    NASA Astrophysics Data System (ADS)

    Arslan, Engin; Bütün, Serkan; Lisesivdin, S. Bora; Kasap, Mehmet; Ozcelik, Suleyman; Ozbay, Ekmel

    2008-05-01

    In the present study, we reported the results of the investigation of electrical and optical measurements in AlxGa1-xN/GaN heterostructures (x =0.20) that were grown by way of metal-organic chemical vapor deposition on sapphire and SiC substrates with the same buffer structures and similar conditions. We investigated the substrate material effects on the electrical and optical properties of Al0.20Ga0.80N/GaN heterostructures. The related electrical and optical properties of AlxGa1-xN/GaN heterostructures were investigated by variable-temperature Hall effect measurements, photoluminescence (PL), photocurrent, and persistent photoconductivity (PPC) that in turn illuminated the samples with a blue (λ =470 nm) light-emitting diode (LED) and thereby induced a persistent increase in the carrier density and two-dimensional electron gas (2DEG) electron mobility. In sample A (Al0.20Ga0.80N/GaN/sapphire), the carrier density increased from 7.59×1012 to 9.9×1012 cm-2 via illumination at 30 K. On the other hand, in sample B (Al0.20Ga0.80N/GaN/SiC), the increments in the carrier density were larger than those in sample A, in which it increased from 7.62×1012 to 1.23×1013 cm-2 at the same temperature. The 2DEG mobility increased from 1.22×104 to 1.37×104 cm-2/V s for samples A and B, in which 2DEG mobility increments occurred from 3.83×103 to 5.47×103 cm-2/V s at 30 K. The PL results show that the samples possessed a strong near-band-edge exciton luminescence line at around 3.44 and 3.43 eV for samples A and B, respectively. The samples showed a broad yellow band spreading from 1.80 to 2.60 eV with a peak maximum at 2.25 eV with a ratio of a near-band-edge excitation peak intensity up to a deep-level emission peak intensity ratio that were equal to 3 and 1.8 for samples A and B, respectively. Both of the samples that were illuminated with three different energy photon PPC decay behaviors can be well described by a stretched-exponential function and relaxation time

  10. Mg doping and its effect on the semipolar GaN(1122) growth kinetics

    SciTech Connect

    Lahourcade, L.; Wirthmueller, A.; Monroy, E.; Chauvat, M. P.; Ruterana, P.; Laufer, A.; Eickhoff, M.

    2009-10-26

    We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.

  11. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  12. Effect of Doping Profile and Concentration on the Near-Infrared Optical Properties of AlGaN/GaN and AlInN/GaN Heterostructures

    NASA Astrophysics Data System (ADS)

    Cervantes, Mayra; Edmunds, Colin; Li, Donghui; Tang, Liang; Shao, Jiayi; Gardner, Geoff; Manfra, Michael; Malis, Oana

    2012-02-01

    Intersubband (ISB) devices utilizing III-nitrides have recently attracted attention for near- and far- infrared optoelectronic applications. In order to achieve efficient ISB transitions, large doping densities are typically required (>1E18 cm-3). The large impurity density has significant effects on the band structure and material quality, effects that are reflected in important device parameters such as transition energies and linewidths. To determine the optimal doping concentration and profile for III-N intersubband devices, we carried out a systematic study of optical and structural properties of strained AlGaN/GaN and lattice-matched AlInN/GaN heterostructures grown by MBE on quasi-bulk GaN substrates. The lattice-matched AlInN/GaN system is targeted because it allows growth of thick strain-free materials. However, it also presents some considerable growth challenges due to the vastly different optimal growth conditions for Al and In containing nitrides. The transition energy and line profile were determined by direct and photoinduced absorption measurements, while the material quality was assessed using TEM and high resolution x-ray diffraction. The FWHM of the ISB transition at 1.9 μm was found to vary up to 60% with the position of delta doping in the quantum well.

  13. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  14. Impacts of Co doping on ZnO transparent switching memory device characteristics

    NASA Astrophysics Data System (ADS)

    Simanjuntak, Firman Mangasa; Prasad, Om Kumar; Panda, Debashis; Lin, Chun-An; Tsai, Tsung-Ling; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-05-01

    The resistive switching characteristics of indium tin oxide (ITO)/Zn1-xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

  15. Magnetic property and possible half-metal behavior in Co-doped graphene

    SciTech Connect

    Li, Zhongyao Xie, Wenze; Liu, Xingen; Wu, Yong

    2015-02-28

    The magnetic property and band structures of Co-monolayer doped graphene were examined on the basis of density-functional theory. The magnetic moment of the system is closely related to the interfacial spacing. Magnetic-nonmagnetic transition would be produced by decreasing the layer distance. Although the magnetic moment can also be reduced by increasing the lattice constant, the ground states are magnetic states under tension. Besides, the increase of lattice constant greatly enlarges the direct and indirect gaps of spin-down bands near the Fermi level. With a little increase of the Fermi level or the electron density, half-metal behavior would be expectable in the Co-doped graphene under tension.

  16. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  17. Crystallization studies on rare-earth co-doped fluorozirconate-based glasses

    PubMed Central

    Paßlick, C.; Johnson, J.A.; Schweizer, S.

    2013-01-01

    This work focuses on the structural changes of barium chloride (BaCl2) nanoparticles in fluorochlorozirconate-based glass ceramics when doped with two different luminescent activators, in this case rare-earth (RE) ions, and thermally processed using a differential scanning calorimeter. In a first step, only europium in its divalent and trivalent oxidation states, Eu2+ and Eu3+, is investigated, which shows no significant influence on the crystallization of hexagonal phase BaCl2. However, higher amounts of Eu2+ increase the activation energy of the phase transition to an orthorhombic crystal structure. In a second step, nucleation and nanocrystal growth are influenced by changing the structural environment of the glasses by co-doping with Eu2+ and trivalent Gd3+, Nd3+, Yb3+, or Tb3+, due to the different atomic radii and electro-negativity of the co-dopants. PMID:23745010

  18. Co-doped sodium chloride crystals exposed to different irradiation temperature

    SciTech Connect

    Ortiz-Morales, A.; Cruz-Zaragoza, E.; Furetta, C.; Kitis, G.; Flores J, C.; Hernandez A, J.; Murrieta S, H.

    2013-07-03

    Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of the dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.

  19. Electronic and magnetic properties of Co doped MoS2 monolayer

    NASA Astrophysics Data System (ADS)

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-04-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor.

  20. Structural and dielectric properties of Nd/Ca co-doped bi-ferrite multiferroics

    SciTech Connect

    Kumar, Ashwini E-mail: ashu.dhanda@gmail.com; Sharma, Poorva E-mail: ashu.dhanda@gmail.com; Varshney, Dinesh E-mail: ashu.dhanda@gmail.com

    2014-04-24

    Single-phase polycrystalline samples of Bi{sub 0.8}Nd{sub 0.2−x}Ca{sub x}FeO{sub 3} (x = 0.0, 0.1) were synthesized by chemical coprecipitation method. X-ray diffraction patterns accompanied by Rietveld-refined crystal structure parameters reveal the phase transition of Bi{sub 0.8}Nd{sub 0.1}Ca{sub 0.1}FeO{sub 3} with rhombohedral R3c symmetry to triclinic structure of Bi{sub 0.8}Nd{sub 0.2}FeO{sub 3} sample. Frequency dependence of dielectric constant (ε') and dielectric loss (tanδ), infers enhancement of both ε' (tanδ) in narrow band gap of Nd/Ca co-doped BFO as compare to wide band pristine BFO.

  1. Characterization of CdZnTe co-doped with indium and lead

    NASA Astrophysics Data System (ADS)

    Zaman, Yasir; Jie, Wanqi; Wang, Tao; He, Yihui; Xu, Lingyan; Guo, Rongrong; Xu, Yadong; Zha, Gangqiang

    2015-01-01

    Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8×1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44×10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

  2. Ultrahigh volumetric capacitance and cyclic stability of fluorine and nitrogen co-doped carbon microspheres

    PubMed Central

    Zhou, Junshuang; Lian, Jie; Hou, Li; Zhang, Junchuan; Gou, Huiyang; Xia, Meirong; Zhao, Yufeng; Strobel, Timothy A.; Tao, Lu; Gao, Faming

    2015-01-01

    Highly porous nanostructures with large surface areas are typically employed for electrical double-layer capacitors to improve gravimetric energy storage capacity; however, high surface area carbon-based electrodes result in poor volumetric capacitance because of the low packing density of porous materials. Here, we demonstrate ultrahigh volumetric capacitance of 521 F cm−3 in aqueous electrolytes for non-porous carbon microsphere electrodes co-doped with fluorine and nitrogen synthesized by low-temperature solvothermal route, rivaling expensive RuO2 or MnO2 pseudo-capacitors. The new electrodes also exhibit excellent cyclic stability without capacitance loss after 10,000 cycles in both acidic and basic electrolytes at a high charge current of 5 A g−1. This work provides a new approach for designing high-performance electrodes with exceptional volumetric capacitance with high mass loadings and charge rates for long-lived electrochemical energy storage systems. PMID:26415838

  3. Comparison of the low-temperature specific heat of Fe- and Co-doped Bi1.8Pb0.2Sr2Ca(Cu1-xMx)2O8 (M=Fe or Co): Anomolously enhanced electronic contribution due to Fe doping

    NASA Astrophysics Data System (ADS)

    Yu, M. K.; Franck, J. P.

    1996-04-01

    Specific-heat data of Fe-doped Bi1.8Pb0.2Sr2Ca(Cu1-xFex)2O8 in the range 2-20 K are presented for x=1, 2, 4, 6, and 8 %. The data are compared with our previous measurements on Co-doped bismuth-strontium-calcium-copper oxide superconductors of nominal composition Bi2Sr2CaCu2O8 (BISCO 2212). Both Fe and Co are magnetic substitutions with effective moments close to their free-ion value. In the normal state the magnetic susceptibility increases by more than a factor 2 over the doping range due to effective-mass enhancement. In the superconducting state both ions act as magnetic pair breakers. For Co doping the normal-state linear term γ is observed, enhanced due to the effective-mass increase. For Fe doping we observe a large anomalous contribution to the electronic specific heat starting near 15 K and leading at the lowest temperature to a linear term near γ0=72 mJ/mole K2 (1 mole=1 formula unit). The anomalous term is typical of heavy fermion behavior. Comparison with specific-heat data of Co-doped BISCO 2212 suggests that hybridization between 3d electrons of the dopant and the planar carriers is more effective for Fe doping than for Co doping.

  4. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance

    PubMed Central

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg−1, a high reversible specific capacity of 1055.20 mAhg−1 after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg−1 when cycled at the current density of 1000 mAg−1, indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  5. Encapsulation of Fe3O4 Nanoparticles into N, S co-Doped Graphene Sheets with Greatly Enhanced Electrochemical Performance.

    PubMed

    Yang, Zunxian; Qian, Kun; Lv, Jun; Yan, Wenhuan; Liu, Jiahui; Ai, Jingwei; Zhang, Yuxiang; Guo, Tailiang; Zhou, Xiongtu; Xu, Sheng; Guo, Zaiping

    2016-01-01

    Particular N, S co-doped graphene/Fe3O4 hybrids have been successfully synthesized by the combination of a simple hydrothermal process and a subsequent carbonization heat treatment. The nanostructures exhibit a unique composite architecture, with uniformly dispersed Fe3O4 nanoparticles and N, S co-doped graphene encapsulant. The particular porous characteristics with many meso/micro holes/pores, the highly conductive N, S co-doped graphene, as well as the encapsulating N, S co-doped graphene with the high-level nitrogen and sulfur doping, lead to excellent electrochemical performance of the electrode. The N-S-G/Fe3O4 composite electrode exhibits a high initial reversible capacity of 1362.2 mAhg(-1), a high reversible specific capacity of 1055.20 mAhg(-1) after 100 cycles, and excellent cycling stability and rate capability, with specific capacity of 556.69 mAhg(-1) when cycled at the current density of 1000 mAg(-1), indicating that the N-S-G/Fe3O4 composite is a promising anode candidate for Li-ion batteries. PMID:27296103

  6. Temperature dependence anomalous dielectric relaxation in Co doped ZnO nanoparticles

    SciTech Connect

    Ansari, Sajid Ali; Nisar, Ambreen; Fatma, Bushara; Khan, Wasi; Chaman, M.; Azam, Ameer; Naqvi, A.H.

    2012-12-15

    Graphical abstract: Display Omitted Highlights: ► We prepared Co doped ZnO by facile gel-combustion method. ► Studied temperature dependent dielectric properties in detail. ► Relaxation time shifts toward the higher temperature as increase in Co content. ► SEM analysis shows formation and agglomeration of nanoparticles. ► Dielectric constants, loss and ac conductivity increases with rise in temperature. ► The dielectric constant, loss and ac conductivity decreases as Co ion increases. -- Abstract: We have reported temperature and frequency dependence of dielectric behavior of nanocrystalline Zn{sub 1−x}Co{sub x}O (x = 0.0, 0.01, 0.05 and 0.1) samples prepared by gel-combustion method. The synthesized samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and LCR-meter, respectively. The XRD analysis reveals that ZnO has a hexagonal (wurtzite) crystal structure. The morphology and size of the nanoparticles (∼10–25 nm) were observed by SEM for 5% Co doped ZnO sample. In dielectric properties, complex permittivity (ε{sup *} = ε′ − jε″), loss tangent (tan δ) and ac conductivity (σ{sub ac}) in the frequency range 75 kHz to 5 MHz were analyzed with temperature range 150–400 °C. The experimental results indicate that ε′, ε″, tan δ and σ{sub ac} decreases with increase in frequency and temperature. The transition temperature as obtained in dispersion curve of dielectric constant shifts toward higher temperature with increase Co content.

  7. Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers

    NASA Astrophysics Data System (ADS)

    Pendem, Vikas; Adhikari, Sonachand; Mathew, Manish; Singh, Sumitra; Pal, Suchandan

    2015-12-01

    Polarization-matched graded AlInGaN electron blocking layer (EBL) and hole blocking layer (HBL) are proposed to reduce efficiency droop in GaN-InGaN light-emitting diodes (LEDs). Five different structures have been simulated to study the effect of different blocking layers and a significant reduction in the efficiency droop has been noticed, from 52% in conventional structure to 2% in polarization-matched graded AlInGaN EBL and HBL structure at a current density of 1000 A cm-2. This has been achieved at the cost of multimode emission from such polarization-matched blocking layers which sets a trade-off between efficiency droop and multimode emission. The AlInGaN layer can therefore be characterized by droop cut-off condition (DCC) and multimode cut-off condition (MCC). For the best structure proposed in this paper, simulations indicate a DCC having Al and In composition of 0.10 and 0.15 respectively; and an MCC having Al and In composition of 0.08 and 0.23 respectively.

  8. A theoretical investigation of effective surface recombination velocity in AlGaAs/GaAs heteroface solar cells

    SciTech Connect

    Gee, J.M.; Drummond, T.J.

    1990-01-01

    An AlGaAs window layer is used in high-efficiency GaAs solar cells to reduce carrier recombination at the front surface. Free surfaces of III-V semiconductors have a high density of surface states that serve as recombination sites and create a depletion region at the front surface. We have performed a theoretical investigation of front-surface recombination that includes the effect of a surface space-charge layer. It was found that the surface space-charge layer can have a profound effect on front-surface recombination for thin or lightly doped window layers. 15 refs., 5 figs., 1 tab.

  9. Catalytic activity of enzymes immobilized on AlGaN /GaN solution gate field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baur, B.; Howgate, J.; von Ribbeck, H.-G.; Gawlina, Y.; Bandalo, V.; Steinhoff, G.; Stutzmann, M.; Eickhoff, M.

    2006-10-01

    Enzyme-modified field-effect transistors (EnFETs) were prepared by immobilization of penicillinase on AlGaN /GaN solution gate field-effect transistors. The influence of the immobilization process on enzyme functionality was analyzed by comparing covalent immobilization and physisorption. Covalent immobilization by Schiff base formation on GaN surfaces modified with an aminopropyltriethoxysilane monolayer exhibits high reproducibility with respect to the enzyme/substrate affinity. Reductive amination of the Schiff base bonds to secondary amines significantly increases the stability of the enzyme layer. Electronic characterization of the EnFET response to penicillin G indicates that covalent immobilization leads to the formation of an enzyme (sub)monolayer.

  10. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    SciTech Connect

    Simimol, A.; Anappara, Aji A.; Greulich-Weber, S.; Chowdhury, Prasanta; Barshilia, Harish C.

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  11. Enhanced 1.53 μm radiative transition in Er3+/Ce3+ co-doped tellurite glass modified by B2O3 oxide

    NASA Astrophysics Data System (ADS)

    Yang, Fengjing; Huang, Bo; Wu, Libo; Zhou, Yaxun; Chen, Fen; Yang, Gaobo; Li, Jun

    2015-09-01

    Er3+/Ce3+ co-doped and B2O3 modified tellurite glasses with initial composition of TeO2-GeO2-Li2O-Nb2O5 were prepared using melt-quenching technique for potential applications in Er3+-doped fiber amplifiers (EDFAs) and lasers. The absorption spectra, fluorescence spectra, up-conversion spectra, Raman spectra and differential scanning calorimeter (DSC) curves of glass samples were measured to evaluate the effect of B2O3 modification on the 1.53 μm band spectroscopic properties of Er3+, structural nature and thermal stability of glass hosts. It was shown that the introduction of an appropriate amount of B2O3 oxide can further improve the 1.53 μm band fluorescence emission through an enhanced phonon-assisted energy transfer (ET) from Er3+ to Ce3+ ions under the excitation of 980 nm, and the quantitative studies were carried out to elucidate the ET mechanism via calculating the microscopic parameters and phonon contribution ratios. Meanwhile, the thermal stability of glass hosts increases slightly with the introduction of B2O3 oxide. Furthermore, the 1.53 μm band optical signal amplification was simulated based on the rare-earth ion rate and light power propagation equations. An increment in signal gain by about 1.4 dB at 1532 nm was observed in the Er3+/Ce3+ co-doped tellurite glass fiber containing 6 mol% amount of B2O3 oxide, and the maximum signal gain reaches to 31 dB on a 50 cm fiber pumped at 980 nm with power 200 mW. The present results indicate that the prepared Er3+/Ce3+ co-doped tellurite glass modified by an appropriate amount of B2O3 oxide has good prospect as a gain medium applied for 1.53 μm band EDFAs and lasers.

  12. Magnetism and associated exchange bias in Ni2-xCoxMn1.4Ga0.6

    NASA Astrophysics Data System (ADS)

    Chapai, Ramakanta; Khan, Mahmud

    2016-04-01

    A series of Ni2-xCoxMn1.4Ga0.6 Heusler alloys have been systematically investigated by x-ray diffraction, dc magnetization, and ac susceptibility measurements. For all Co concentration, the alloys exhibit the L10 martensitic structure at room temperature. Interestingly, Co doping simultaneously causes a reduction in the ferromagnetic exchange interaction and enhancement of magnetic anisotropy in Ni2-xCoxMn1.4Ga0.6. Exchange bias effects under both zero field cooled and field cooled condition have been observed in all alloys for x<0.3. The ac susceptibility data show frequency dependence that changes with increasing Co concentration, indicating a change of ground state from spin glass to super spin glass. The experimental results are explained considering the atomic radii of Ni and Co and the fundamental magnetic interactions in Heusler alloys.

  13. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    PubMed Central

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-01-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm−3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab. PMID:27550805

  14. Synergy of metal and nonmetal dopants for visible-light photocatalysis: a case-study of Sn and N co-doped TiO2.

    PubMed

    Zhuang, Huaqiang; Zhang, Yingguang; Chu, Zhenwei; Long, Jinlin; An, Xiaohan; Zhang, Hongwen; Lin, Huaxiang; Zhang, Zizhong; Wang, Xuxu

    2016-04-14

    This paper mainly focuses on the synergistic effect of Sn and N dopants to enhance the photocatalytic performance of anatase TiO2 under visible light or simulated solar light irradiation. The Sn and N co-doped TiO2 (SNT-x) photocatalysts were successfully prepared by the facile sol-gel method and the post-nitridation route in the temperature range of 400-550 °C. All the as-prepared samples were characterized in detail by X-ray diffraction, UV-vis diffuse reflectance spectroscopy, transmission electron microscopy, X-ray photoelectron and electron spin resonance spectroscopy and photoelectrochemical measurements. The characterization results reveal that the co-incorporation of Sn and N atoms remarkably modifies the electronic structure of TiO2, which gives rise to a prominent separation of photogenerated charge carriers and more efficient interfacial charge-transfer reactions in a photocatalytic process. The enhanced photocatalytic activity is attributed to the intensified active oxygen species including hydroxyl radicals (˙OH) and superoxide anion radicals (O2˙(-)) for degradation of organic pollutants. And the result of photocatalytic hydrogen production further confirms the existence of the synergistic effect in the SNT-x samples, because they exhibit higher photocatalytic activity than the sum of N/TiO2 and Sn/TiO2. This work provides a paradigm to consolidate the understanding of the synergistic effect of metal and non-metal co-doped TiO2 in domains of photocatalysis and photoelectrochemistry. PMID:26996319

  15. Highly efficient Yb3+/Tm3+ co-doped NaYF4 nanotubes: Synthesis and intense ultraviolet to infrared up-conversion luminescence

    NASA Astrophysics Data System (ADS)

    Zhang, Y. Y.; Wang, Y.; Deng, J. Q.; Wang, J.; Ni, S. C.

    2014-02-01

    Nanocrystals of up-conversion (UC) phosphor Yb3+/Tm3+ co-doped NaYF4 are prepared by a facile hydrothermal method using oleic acid as a stabilizing agent. The as-prepared nanocrystals are of hexagonal phase, and have tube-like morphology and strong ultraviolet (UV) and blue UC fluorescence intensity, which have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and luminescence spectroscopy. The effect of Yb3+ concentration on the UC emission properties is also analyzed. Our results reveal that the intensity of emission peaks can be controlled by varying the Yb3+ concentration and these NaYF4 nanotubes are highly efficient host material. The as-prepared NaYF4 nanotubes show potential applications in UV compact solid state lasers and multi-channel fluorescent label.

  16. The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering

    SciTech Connect

    Heng, C.L.; Finstad, T.G.; Storaas, P.; Li, Y.J.; Gunnaes, A.E.; Nilsen, O.

    2004-11-08

    In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The PL intensity reaches a maximum value after the film is annealed at 700 deg. C for 30 min in N{sub 2}. High-resolution transmission electron microscopy observation, together with energy dispersive x-ray spectroscopy analysis, indicates that amorphous Ge-rich nanoclusters precipitate in the film after 700 deg. C annealing. X-ray diffraction shows the presence of Ge nanocrystals after 900 deg. C annealing, and increasing Ge nanocrystal size with increasing annealing temperature up to 1100 deg. C. The results suggest that the amorphous Ge-rich nanoclusters are more effective than Ge nanocrystals in exciting the Er{sup 3+} PL.

  17. Pr and F co-doped SnO₂ transparent conductive films with high work function deposited by ion-assisted electron beam evaporation.

    PubMed

    Wu, Shaohang; Li, Yantao; Luo, Jinsong; Lin, Jie; Fan, Yi; Gan, Zhihong; Liu, Xingyuan

    2014-02-24

    A transparent conductive oxide (TCO) Pr and F co-doped SnO2 (PFTO) film is prepared by ion-assisted electron beam deposition. An optimized PFTO film shows a high average visible optical transmittance of 83.6% and a minimum electrical resistivity of 3.7 × 10(-3) Ω·cm corresponding to a carrier density of 1.298 × 10(20) cm(-3) and Hall mobility of 12.99 cm(2)/V⋅s. This PFTO film shows a high work function of 5.147 eV and favorable surface morphology with an average roughness of 1.45 nm. Praseodymium fluoride is found to be an effective material to dope F into SnO2 that can simplify the fabrication process of SnO2-based TCO films. PMID:24663792

  18. Efficient green and red upconversion emissions in Er3+/Yb3+ co-doped ZnAl2O4 phosphor obtained by combustion reaction

    NASA Astrophysics Data System (ADS)

    de Camargo, A. S. S.; Nunes, L. A. O.; Silva, J. F.; Costa, A. C. F. M.; Barros, B. S.; Silva, J. E. C.; de Sá, G. F.; Alves, S., Jr.

    2007-06-01

    Thin ceramic powders of zinc aluminate ZnAl2O4 co-doped with Er3+ and Yb3+ were prepared by a combustion reaction and characterized from the spectroscopic point of view, with the aim of investigating the effect and mechanisms of upconversion emissions. The characteristic cubic spinel structure was predominantly formed for all doped samples, and intense upconversion emission was observed in the green and red spectral regions, under 980 nm diode laser excitation. The upconversion mechanism of both emissions was confirmed to involve two photon absorptions and it was found that the efficiencies of the emissions are considerably enhanced by increasing the Yb3+ concentration in relation to Er3+. The results indicate the potential of ZnAl2O4:Er3+,Yb3+ phosphor powders for applications in luminescent display panels and other photonic devices.

  19. Influence of Co doping on structural and electrical properties of La0.5Ce0.5Mn1-xCoxO3 manganites

    NASA Astrophysics Data System (ADS)

    Mansuri, Irfan; Shaikh, M. W.; Kuo, Y. K.; Varshney, Dinesh

    2013-02-01

    The effect of Co doping on structural, electrical and magnetic properties of half doped La0.5Ce0.5Mn1-xCoxO3 (x = 0, 0.05) is investigated. The structure of the compounds crystallizes in to orthorhombically distorted perovskite structure. The electrical resistivity of La0.5Ce0.5MnO3 exhibits metal-semiconductor transition (TMS ˜ 225 K). However, La0.5Ce0.5Mn1-xCo0.05O3 manganites show semiconducting behavior throughout temperature range. The magnetic susceptibility measurement confirms that both the samples undergo a transition from paramagnetic to ferromagnetic phase. The metallic resistivity (T < TMS) is analyzed by considering the electron-electron, electron-phonon and spin fluctuation mechanism while semiconducting resistivity is fitted with small polaron conduction model.

  20. Field-induced enhancement of voltage-controlled diffractive properties in paraelectric iron and manganese co-doped potassium-tantalate-niobate crystal

    NASA Astrophysics Data System (ADS)

    Wang, Lei; Tian, Hao; Meng, Xiangda; Chen, Huishun; Zhou, Zhongxiang; Shen, Yanqing

    2014-11-01

    High voltage-controlled diffraction efficiency of 78.3% was obtained in paraelectric potassium-tantalate-niobate crystal co-doped with iron and manganese. It was found that the recording time required to achieve maximum diffraction efficiency can be significantly reduced through the application of an external electric field on the crystal during writing. More importantly, the maximum diffraction efficiency maintained a considerably high value under a low external field at different writing angles. The external-field-enhanced space-charge fields were also calculated to interpret the important role of the enhancement effect. The results show that employing an enhanced electric field is of great significance for electroholography device applications.

  1. Effect of Ga and As sublayers on the structures and properties of Ni-GaAs contacts

    SciTech Connect

    Romanova, I.D.; Maksimova, N.K.; Potakhova, L.Yu.; Yanovskii, V.P.; Yakubenya, M.P.; Ivleva, O.M.; Misik, A.M.; Morozov, V.S.

    1987-08-01

    Studies were made of heat-treated Ni-GaAs contacts, at which, prior to the electrochemical deposition of nickel, thin layers of gallium or arsenic were deposited. The physicochemical reactions at the interfaces were investigated, as well as the electrophysical characteristics of the diodes, the morphology of the metallic coatings, and the mechanical stresses. The phase composition of the contacts and the height of the barrier are seen to be practically independent of the introduction of excess Ga or As, whereas the thermal stability of the electrical parameters of the diodes varies considerably. This difference is associated with the effect of the Ga and As sublayers on the magnitude of the mechanical stresses arising at the metal-semiconductor interface.

  2. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    NASA Astrophysics Data System (ADS)

    Zhang, Jingyun; Lou, Xiabing; Si, Mengwei; Wu, Heng; Shao, Jiayi; Manfra, Michael J.; Gordon, Roy G.; Ye, Peide D.

    2015-02-01

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La2O3 as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an ION/IOFF ratio of greater than 107.

  3. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  4. Influence of Li+ and Nd3+ co-doping on structural and optical properties of l-arginine-passivated ZnS nanoparticles

    NASA Astrophysics Data System (ADS)

    Talwatkar, S. S.; Sunatkari, A. L.; Tamgadge, Y. S.; Pahurkar, V. G.; Muley, G. G.

    2015-02-01

    We report the effect of Li + and Nd3+ co-doping on structural and optical properties of l-arginine-passivated ZnS nanoparticles (NPs) synthesized by chemical co-precipitation method. High-resolution transmission electron microscopy (HR-TEM) and X-ray diffraction study were used to explore the morphological and structural aspects of prepared NPs. HR-TEM analysis confirmed that the size of ZnS NPs reduces from 5 to 3 nm as the concentration of co-dopant increases from 1 to 5 wt%. Ultraviolet-visible absorption spectra show absorption peaks in the range of 295-315 nm indicating huge blue shift as compared to the bulk ZnS (340 nm, E g = 3.6 eV) due to the quantum confinement effect. The large optical band gap was estimated in the range of 3.95-4.62 eV and found increasing as the co-dopant concentration increases. Photoluminescence spectra showed that co-doped ZnS NPs emit multiple intense violet-colored (370, 375, 380, 388 and 398 nm) and blue-colored (425, 448, 455 and 465 nm) peaks with increasing intensity. Fourier transform infrared study confirmed the strong interaction between ZnS NPs and l-arginine ligands. The presence of co-dopant in the sample is confirmed by energy dispersive X-ray analysis. Based on the results, we proposed that this material is a new class of luminescent material suitable in optoelectronics devices application, especially in light-emitting devices, electroluminescent devices, display devices, etc.

  5. Room temperature dielectric and magnetic properties of Gd and Ti co-doped BiFeO{sub 3} ceramics

    SciTech Connect

    Basith, M. A. E-mail: arima@yz.yamagata-u.ac.jp; Kurni, O.; Alam, M. S.; Sinha, B. L.; Ahmmad, Bashir E-mail: arima@yz.yamagata-u.ac.jp

    2014-01-14

    Room temperature dielectric and magnetic properties of BiFeO{sub 3} samples, co-doped with magnetic Gd and non-magnetic Ti in place of Bi and Fe, respectively, were reported. The nominal compositions of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics were synthesized by conventional solid state reaction technique. X-ray diffraction patterns revealed that the substitution of Fe by Ti induces a phase transition from rhombohedral to orthorhombic at x > 0.20. Morphological studies demonstrated that the average grain size was reduced from ∼1.5 μm to ∼200 nm with the increase in Ti content. Due to Ti substitution, the dielectric constant was stable over a wide range of high frequencies (30 kHz to 20 MHz) by suppressing the dispersion at low frequencies. The dielectric properties of the compounds are associated with their improved morphologies and reduced leakage current densities probably due to the lower concentration of oxygen vacancies in the compositions. Magnetic properties of Bi{sub 0.9}Gd{sub 0.1}Fe{sub 1–x}Ti{sub x}O{sub 3} (x = 0.00-0.25) ceramics measured at room temperature were enhanced with Ti substitution up to 20% compared to that of pure BiFeO{sub 3} and Ti undoped Bi{sub 0.9}Gd{sub 0.1}FeO{sub 3} samples. The enhanced magnetic properties might be attributed to the substitution induced suppression of spiral spin structure of BiFeO{sub 3}. An asymmetric shifts both in the field and magnetization axes of magnetization versus magnetic field curves was observed. This indicates the presence of exchange bias effect in these compounds notably at room temperature.

  6. Room temperature dielectric and magnetic properties of Gd and Ti co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Basith, M. A.; Kurni, O.; Alam, M. S.; Sinha, B. L.; Ahmmad, Bashir

    2014-01-01

    Room temperature dielectric and magnetic properties of BiFeO3 samples, co-doped with magnetic Gd and non-magnetic Ti in place of Bi and Fe, respectively, were reported. The nominal compositions of Bi0.9Gd0.1Fe1-xTixO3 (x = 0.00-0.25) ceramics were synthesized by conventional solid state reaction technique. X-ray diffraction patterns revealed that the substitution of Fe by Ti induces a phase transition from rhombohedral to orthorhombic at x > 0.20. Morphological studies demonstrated that the average grain size was reduced from ˜1.5 μm to ˜200 nm with the increase in Ti content. Due to Ti substitution, the dielectric constant was stable over a wide range of high frequencies (30 kHz to 20 MHz) by suppressing the dispersion at low frequencies. The dielectric properties of the compounds are associated with their improved morphologies and reduced leakage current densities probably due to the lower concentration of oxygen vacancies in the compositions. Magnetic properties of Bi0.9Gd0.1Fe1-xTixO3 (x = 0.00-0.25) ceramics measured at room temperature were enhanced with Ti substitution up to 20% compared to that of pure BiFeO3 and Ti undoped Bi0.9Gd0.1FeO3 samples. The enhanced magnetic properties might be attributed to the substitution induced suppression of spiral spin structure of BiFeO3. An asymmetric shifts both in the field and magnetization axes of magnetization versus magnetic field curves was observed. This indicates the presence of exchange bias effect in these compounds notably at room temperature.

  7. Self-organized vanadium and nitrogen co-doped titania nanotube arrays with enhanced photocatalytic reduction of CO2 into CH4

    PubMed Central

    2014-01-01

    Self-organized V-N co-doped TiO2 nanotube arrays (TNAs) with various doping amount were synthesized by anodizing in association with hydrothermal treatment. Impacts of V-N co-doping on the morphologies, phase structures, and photoelectrochemical properties of the TNAs films were thoroughly investigated. The co-doped TiO2 photocatalysts show remarkably enhanced photocatalytic activity for the CO2 photoreduction to methane under ultraviolet illumination. The mechanism of the enhanced photocatalytic activity is discussed in detail. PMID:24948893

  8. Synthesis and up-conversion luminescence properties of Ho3+, Yb3+ co-doped BaLa2ZnO5

    NASA Astrophysics Data System (ADS)

    Xie, Jing; Mei, Lefu; Liao, Libing; Guan, Ming; Liu, Haikun

    2015-08-01

    Up-conversion phosphors BaLa2ZnO5 co-doped with Ho3+/Yb3+ were synthesized by high temperature solid-state reaction method. The phase composition of the phosphors was characterized by X-ray diffraction (XRD). The structure of BaLa2ZnO5: 0.75% Ho/15% Yb phosphor was refined by the Rietveld method and results showed the decreased unit cell parameters and cell volume after doping Ho3+ and Yb3+, indicating Ho3+ and Yb3+ have successfully replaced La3+. Under the excitation of 980 nm diode laser, the strong green and weak red up-conversion emissions centered at 548 nm, 664 nm and 758 nm were observed, which originating from 5S2, 5F2→5I8, 5F4→5I8 and 5S2, 5F2→5I7 transitions of Ho3+ ions, respectively. The optimum doping concentrations of Ho3+ and Yb3+ were determined to be 0.75% and 15%, and the corresponding Commission International de L'Eclairage (CIE) coordinates are calculated to be x=0.298 and y=0.692. The related UC mechanism of Ho3+/Yb3+ co-doped BaLa2ZnO5 depending on pump power was studied in detail. The results indicate that BaLa2ZnO5: Ho3+/Yb3+ can be an effective candidate for up-conversion yellowish-green light emitter.

  9. Microwave-Assisted Synthesis of Boron and Nitrogen co-doped Reduced Graphene Oxide for the Protection of Electromagnetic Radiation in Ku-Band.

    PubMed

    Umrao, Sima; Gupta, Tejendra K; Kumar, Shiv; Singh, Vijay K; Sultania, Manish K; Jung, Jung Hwan; Oh, Il-Kwon; Srivastava, Anchal

    2015-09-01

    The electromagnetic interference (EMI) shielding of reduced graphene oxide (MRG), B-doped MRG (B-MRG), N-doped MRG (N-MRG), and B-N co-doped MRG (B-N-MRG) have been studied in the Ku-band frequency range (12.8-18 GHz). We have developed a green, fast, and cost-effective microwave assisted route for synthesis of doped MRG. B-N-MRG shows high electrical conductivity in comparison to MRG, B-MRG and N-MRG, which results better electromagnetic interference (EMI) shielding ability. The co-doping of B and N significantly enhances the electrical conductivity of MRG from 21.4 to 124.4 Sm(-1) because N introduces electrons and B provides holes in the system and may form a nanojunction inside the material. Their temperature-dependent electrical conductivity follows 2D-variable range hopping (2D-VRH) and Efros-Shklovskii-VRH (ES-VRH) conduction model in a low temperature range (T<50 K). The spatial configuration of MRG after doping of B and N enhances the space charge polarization, natural resonance, dielectric polarization, and trapping of EM waves by internal reflection leading to a high EMI shielding of -42 dB (∼99.99% attenuation) compared to undoped MRG (-28 dB) at a critical thickness of 1.2 mm. Results suggest that the B-N-MRG has great potential as a candidate for a new type of EMI shielding material useful in aircraft, defense industries, communication systems, and stealth technology. PMID:26287816

  10. Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates

    NASA Technical Reports Server (NTRS)

    Henderson, R. H.; Sun, D.; Towe, E.

    1995-01-01

    The photoluminescence characteristics of pseudomorphic In(0.19)Ga(0.81)As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e yields hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In(0.19)Ga(0.81)As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4 x 4 Luttinger valence band Hamiltonian, and related strain Hamiltonian.

  11. An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaN

    NASA Astrophysics Data System (ADS)

    Hou, Y. T.; Teo, K. L.; Li, M. F.; Uchida, Kazuo; Tokunaga, Hiroki; Akutsu, Nakao; Matsumoto, Koh

    2000-02-01

    Strong Franz-Keldysh oscillations near the band gap of AlGaN are observed in the contactless electroreflectance (CER) studies of a GaN/InGaN/AlGaN multilayer structure. The line shape analysis of the CER spectra at different temperatures provides an accurate determination of the AlGaN band gap energies and the built-in electric fields. Using the existing data of the thermal expansion coefficients of GaN and sapphire, and the piezoelectric constants of AlGaN, the temperature dependence of the electric field is estimated and is in good agreement with the experimental results between 15 and 300 K. We attribute such electric field to the piezoelectric strain effect.

  12. Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

    NASA Astrophysics Data System (ADS)

    Romanov, Ivan S.; Prudaev, Ilya A.; Kopyev, Viktor V.

    2016-05-01

    The built-in electric field in an InGaN quantum well and emission wavelength are numerically evaluated at various GaN barrier thicknesses in blue InGaN/GaN/Al2O3 LED structures. The effect of GaN barrier thickness on the internal quantum efficiency of these structures was studied experimentally by temperature- and excitation-power-dependent photoluminescence measurements. In LED structures with 3-nm-thick GaN barriers in the active region the internal quantum efficiency at high excitation levels higher than that in LED structures with thicker GaN barriers. The results of measurements indicate that in structures with 3-nm-thick GaN barriers, the Auger recombination rate is reduced.

  13. Formation of hydroxyl radicals and kinetic study of 2-chlorophenol photocatalytic oxidation using C-doped TiO2, N-doped TiO2, and C,N Co-doped TiO2 under visible light.

    PubMed

    Ananpattarachai, Jirapat; Seraphin, Supapan; Kajitvichyanukul, Puangrat

    2016-02-01

    This work reports on synthesis, characterization, adsorption ability, formation rate of hydroxyl radicals (OH(•)), photocatalytic oxidation kinetics, and mineralization ability of C-doped titanium dioxide (TiO2), N-doped TiO2, and C,N co-doped TiO2 prepared by the sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy were used to analyze the titania. The rate of formation of OH(•) for each type of titania was determined, and the OH-index was calculated. The kinetics of as-synthesized TiO2 catalysts in photocatalytic oxidation of 2-chlorophenol (2-CP) under visible light irradiation were evaluated. Results revealed that nitrogen was incorporated into the lattice of titania with the structure of O-Ti-N linkages in N-doped TiO2 and C,N co-doped TiO2. Carbon was joined to the Ti-O-C bond in the C-doped TiO2 and C,N co-doped TiO2. The 2-CP adsorption ability of C,N co-doped TiO2 and C-doped TiO2 originated from a layer composed of a complex carbonaceous mixture at the surface of TiO2. C,N co-doped TiO2 had highest formation rate of OH(•) and photocatalytic activity due to a synergistic effect of carbon and nitrogen co-doping. The order of photocatalytic activity per unit surface area was the same as that of the formation rate of OH(•) unit surface area in the following order: C,N co-doped TiO2 > C-doped TiO2 > N-doped TiO2 > undoped TiO2. PMID:26499197

  14. Effect of heterostructure design on current-voltage characteristics in AlxGa1-xN/GaN double-barriers resonant tunneling diode

    NASA Astrophysics Data System (ADS)

    Boucherit, M.; Soltani, A.; Rousseau, M.; Farvacque, J.-L.; DeJaeger, J.-C.

    2012-12-01

    Ballistic transport in double-barriers resonant tunneling diodes based on GaN is investigated in this work using the non-equilibrium Green's functions formalism. The electron density of states, the electrons concentration, and the current-voltage characteristics are calculated taking into account the internal electric field induced in the AlxGa1-xN/GaN heterostructures. The effect of the geometrical parameters on the evolution of the current resonances characteristics was analyzed qualitatively by varying GaN quantum well width, thicknesses and height of the AlxGa1-xN barriers.

  15. Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect

    CA Wang; DA Shiau; D Donetsky; S Anikeev; G Belenky; S Luryi

    2004-04-29

    The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low as 20 cm/s was achieved for GaInAsSb/AlGaAsSb double heterostructures.

  16. Effects of Ga Addition on Interfacial Reactions Between Sn-Based Solders and Ni

    NASA Astrophysics Data System (ADS)

    Wang, Chao-Hong; Li, Kuan-Ting

    2016-07-01

    The use of Ga as a micro-alloying element in Sn-based solders can change the microstructure of solder joints to improve the mechanical properties, and even suppress the interfacial intermetallic compound (IMC) growth. This research investigated the effects of Ga addition (0.2-1 wt.%Ga) on the IMC formation and morphological evolution in the Sn-based solder joints with Ni substrate. In the soldering reaction at 250°C and with less than 0.2 wt.%Ga addition, the formed phase was Ni3Sn4. When the Ga addition increased to 0.5 wt.%, it changed to a thin Ni2Ga3 layer of ˜1 μm thick, which stably existed at the interface in the initial 1-h reaction. Subsequently, the whole Ni2Ga3 layer detached from the Ni substrate and drifted into the molten solder. The Ni3Sn4 phase became dominant in the later stage. Notably, the Ga addition significantly reduced the grain size of Ni3Sn4, resulting in the massive spalling of Ni3Sn4 grains. With 1 wt.%Ga addition, the Ni2Ga3 layer remained very thin with no significant growth, and it stably existed at the interface for more than 10 h. In addition, the solid-state reactions were examined at temperatures of 160°C to 200°C. With addition of 0.5 wt.%Ga, the Ni3Sn4 phase dominated the whole reaction. By contrast, with increasing to 1 wt.%Ga, only a thin Ni2Ga3 layer was found even after aging at 160°C for more than 1200 h. The 1 wt.%Ga addition in solder can effectively inhibit the Ni3Sn4 formation in soldering and the long-term aging process.

  17. Nonlinear effects in coplanar GaAs/InGaAs strained-layer superlattice directional couplers

    NASA Technical Reports Server (NTRS)

    Das, Utpal; Chen, YI; Bhattacharya, Pallab

    1987-01-01

    The performance characteristics of InGaAs/GaAs strained-layer superlattice coplanar ridge-type directional couplers realized by molecular beam epitaxy are reported. The measured power transfer characteristics with 1.15 micron incident photoexcitation demonstrate nonlinear coupling due to absorption associated with the tails of the excitonic resonances in the quantum wells. From a theoretical fit of the measured data, the nonlinear refractive index coefficient, n2, of the multiquantum well is found to be 2.25 x 10 to the -7th sq cm/W. This agrees very well with a value of n2 = 1.9 x 10 to the-7th sq cm/W obtained independently on the same material from interferometric measurents.

  18. Novel band gap-tunable K-Na co-doped graphitic carbon nitride prepared by molten salt method

    NASA Astrophysics Data System (ADS)

    Zhao, Jiannan; Ma, Lin; Wang, Haoying; Zhao, Yanfeng; Zhang, Jian; Hu, Shaozheng

    2015-03-01

    Novel band gap-tunable K-Na co-doped graphitic carbon nitride was prepared by molten salt method using melamine, KCl, and NaCl as precursor. X-ray diffraction (XRD), N2 adsorption, Scanning electron microscope (SEM), UV-vis spectroscopy, Photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) were used to characterize the prepared catalysts. The CB and VB potentials of graphitic carbon nitride could be tuned from -1.09 and +1.55 eV to -0.29 and +2.25 eV by controlling the weight ratio of eutectic salts to melamine. Besides, ions doping inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, and increased the separation rate of photogenerated electrons and holes. The visible-light-driven Rhodamine B (RhB) photodegradation and mineralization performances were significantly improved after K-Na co-doping.

  19. Enhanced visible light photocatalytic performance of g-C3N4 photocatalysts co-doped with iron and phosphorus

    NASA Astrophysics Data System (ADS)

    Hu, Shaozheng; Ma, Lin; You, Jiguang; Li, Fayun; Fan, Zhiping; Lu, Guang; Liu, Dan; Gui, Jianzhou

    2014-08-01

    Preparation of Fe and P co-doped g-C3N4 was described, using dicyandiamide monomer, ferric nitrate, and diammonium hydrogen phosphate as precursor. X-ray diffraction (XRD), N2 adsorption, UV-vis spectroscopy, Fourier transform infrared spectra (FT-IR), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and photocurrent measurement were used to characterize the prepared catalysts. The results indicated that the addition of dopants inhibited the crystal growth of graphitic carbon nitride, enhanced the surface area, decreased the band gap energy, and restrained the recombination of photogenerated electrons and holes. Fe and P co-doped g-C3N4 exhibited much higher Rhodamine B (RhB) photodegradation rate and H2 production ability than that of single doped and neat g-C3N4 catalysts. The possible mechanism and doping sites of P and Fe were proposed.

  20. Photocatalytic enhancement of TiO2 by B and Zr co-doping and modulation of microstructure

    NASA Astrophysics Data System (ADS)

    Fu, Chengxin; Gong, Yinyan; Wu, Yitao; Liu, Jiaqi; Zhang, Zhen; Li, Can; Niu, Lengyuan

    2016-08-01

    Visible-light photodegradation test revealed that B and Zr co-doping can raise the photocatalytic ability of the undoped TiO2 by a fold. XRD crystallography and Raman phonon spectroscopy measurements suggest that the Zr4+ ions replace the Ti4+ ions while the B3+ ions occupy the interstitial sites, expanding the unit-cell volume and reducing crystallite size. The incorporation of interstitial boron dopants creates oxygen vacancies (Ovrad rad) and reduce Ti4+ to Ti3+ to form [Ovrad rad -Ti3+]+, which traps the carriers and prolongs carrier lifetime. Moreover, Zr4+ ions replace Ti4+ ions and form impurity levels, which could improve visible light response. The co-doped samples are benefited from both B interstitials and Zr substitutes.

  1. Magnetism at grain boundary interfacesin the colossal permittivity dielectric material; In+Nb Co-Doped Rutile

    NASA Astrophysics Data System (ADS)

    Berlie, Adam; Terry, Ian; Cottrell, Stephen; Hu, Wanbiao; Liu, Yun

    With the emphasis in recent years on understanding novel materials with potential technological applications this work seeks to understand magnetic ordering within the colossal-permittivity material, In+Nb co-doped rutile (TiO2). Evidence for a spin-freezing transition was reported from a step like feature in the dielectic data below 50 K but this was largly glossed over. Within this work we show that below 300 K there is a slowing down of magnetic fluctuations associated with the electronic magnetism due to the defect-dipoles created by the co-doping, but the muon spectroscopy results are strongly suggestive of the behaviour being localised to the edges/interfaces of particles/grains. The TC is strongly dependent on the doping level of the samples that presents novel way to control the magnetism and ultimately magneto-electric coupling within a dielectric material.

  2. Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping

    NASA Astrophysics Data System (ADS)

    Wang, Jia; Zhao, Y. F.; Wang, T.; Li, H.; Li, C.

    2015-12-01

    Fe, Co, Ni, or N addition could modulate the photonic and catalytic responses of TiO2 for photocatalysts applications. Their morphologies, structures, compositions and photocatalytic performance in the degradation of methylene blue were characterized by scanning electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy, Raman spectra and X-ray photoelectron spectroscopy. The results showed that dopants affect the electronic transition energies by changing the optical band gap and the impurity absorption peaks of the specimens. Especially, co-doping enhances the visible-light photocatalytic activity of TiO2 by 4-10 times that of pure TiO2, and the Co and N co-doping derives 10-fold photocatalytic activity.

  3. Green up-converted luminescence in (Er3+-Yb3+) co-doped LiNbO3 crystals

    NASA Astrophysics Data System (ADS)

    Stoffel, M.; Rinnert, H.; Kokanyan, E.; Demirkhanyan, G.; Demirkhanyan, H.; Aillerie, M.

    2016-07-01

    Er3+ doped and (Er3+-Yb3+) co-doped LiNbO3 (LN) crystals grown by the Czochralski method are investigated by photoluminescence spectroscopy. Green up-converted luminescence is observed in Er3+ doped LN crystals under 980 nm excitation. This is explained by an energy transfer between two neighboring Er3+ ions. In (Er3+, Yb3+) co-doped LN crystals, the intensity of the green up-converted luminescence can be further enhanced suggesting that Yb3+ ions also contribute to the up-conversion process. Time resolved photoluminescence measurements clearly demonstrate that an efficient energy transfer occurs between Yb3+ and Er3+ ions. A theoretical model taking into account the contribution of both Er3+-Er3+ pairs and Yb3+-Er3+ pairs is able to describe correctly the decay of the up-converted luminescence.

  4. First principles study on B/N pairs co-doping zigzag single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yao, Xinhua; Li, Kejing; Ye, Jinqian; Shao, Qing Yi

    2016-06-01

    The B/N pairs co-doping (5, 0) single-walled carbon nanotubes (SWCNTs) have been investigated by using density functional theory. We gradually increase B/N doping concentration to simulate the growth of B/N pairs doping. We find that B/N pairs prefer to form a B/N hexagonal ring and then B/N rings successively grow around the axis until they are end to end. All B/N pairs doped tubes are turned to semiconducting and the five BN rings co-doped (5, 0) tube shows the occurrence of magnetism. Moreover, the increase of the doping concentration in a particular law may not change electrical properties obviously.

  5. Co and Cu co-doped ZnO epitaxial films—A magnetically soft nano-composite

    NASA Astrophysics Data System (ADS)

    Ney, V.; Venkataraman, V.; Henne, B.; Ollefs, K.; Wilhelm, F.; Rogalev, A.; Ney, A.

    2016-04-01

    A series of Co/Cu co-doped ZnO epitaxial films has been grown on sapphire substrates to investigate the possibilities of tailoring the magnetic properties in functional ZnO-Co/Cu nano-composites. The growth was performed using reactive magnetron sputtering varying the oxygen partial pressure to tune the incorporation of the dopants and the resulting valence state. At high oxygen pressures, Co2+ is formed and the resulting magnetic properties are very similar to phase pure paramagnetic Co-doped ZnO samples. However, the formation of a secondary CuO phase reduces the overall structural quality of the layers and virtually no substitutional incorporation of Cu2+ in ZnO could be evidenced. At low oxygen pressures, a significant fraction of metallic Co and Cu forming nanometer-sized superparamagnetic precipitates of a Co/Cu alloy can be evidenced which are embedded in a ZnO host matrix.

  6. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

    DOE PAGESBeta

    Ahn, S.; Dong, C.; Zhu, W.; Kim, B. -j.; Hwang, Ya-Hsi; Ren, F.; Pearton, S. J.; Yang, Gwangseok; Kim, J.; Patrick, Erin; et al

    2015-08-18

    The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al2O3 as the gate dielectric were studied. Al2O3/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 1015 cm-2 at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, andmore » 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127–289 cm-1. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.« less

  7. Low energy electron beam irradiation effect on optical properties of nanopillar MQW InGaN/GaN structures

    SciTech Connect

    Yakimov, E. B.; Vergeles, P. S.; Polyakov, A. Y.; Jeon, Dae-Woo; Lee, In-Hwan

    2014-02-21

    The low energy electron beam irradiation (LEEBI) effect on optical properties of planar and nanopillar InGaN/GaN muliple quantum well light emitting structures was studied by the cathodoluminescence (CL) method. On the planar structures LEEBI leads to a formation of new InGaN-related emission bands red shifted in comparison with initial one at small irradiation doses and blue shifted at doses higher than 0.5 C/cm{sup 2}. It was observed that after dry etching used for the nanopillar formation the main InGaN-related emission line moves from 2.92 to 2.98 eV that can be explained by a strain relaxation in the quantum wells. The optical properties of nanopilars start to change under LEEBI at a dose of about one order of magnitude lower than that for planar structures. At high irradiation doses the behavior of both structures under LEEBI is similar. The results obtained were explained by the formation and reconstruction of quantum dots inside the quantum wells due to a point defect generation and redistribution stimulated by the electron beam irradiation.

  8. Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Li, Liuan; Kishi, Akinori; Shiraishi, Takayuki; Jiang, Ying; Wang, Qingpeng; Ao, Jin-Ping; Ohno, Yasuo

    2013-11-01

    In this study, we evaluated the annealing temperature and time-dependent electrical properties of AlGaN/GaN heterostructure field-effect transistors (HFETs) utilizing TiN/W/Au as the gate electrode. With the annealing temperature increasing from 750 to 900 °C for the annealing time of 1 min, the sheet resistance of TiN/W/Au films increased gradually while that of the ohmic contact was minimum (0.66 Ω mm) at 800 °C. From the current-voltage characteristics of the Schottky diode and HFETs, it is demonstrated that annealing at 800 °C showed the lowest on-resistance and highest maximum drain current. By prolonging the annealing from 0.5 to 10 min at 800 °C, good device performance was achieved when the annealing time was 1 and 3 min, while the device performance degraded showing an increased gate leakage current and gate resistance with increasing annealing time. These results demonstrated that the TiN/W/Au gate, which can withstand 800 °C annealing for a short time, is suitable for application in the gate-first process for AlGaN/GaN HFETs.

  9. Significant Enhancement of Water Splitting Activity of N-Carbon Electrocatalyst by Trace Level Co Doping.

    PubMed

    Bayatsarmadi, Bita; Zheng, Yao; Tang, Youhong; Jaroniec, Mietek; Qiao, Shi-Zhang

    2016-07-01

    Replacement of precious metal electrocatalysts with highly active and cost efficient alternatives for complete water splitting at low voltage has attracted a growing attention in recent years. Here, this study reports a carbon-based composite co-doped with nitrogen and trace amount of metallic cobalt (1 at%) as a bifunctional electrocatalyst for water splitting at low overpotential and high current density. An excellent electrochemical activity of the newly developed electrocatalyst originates from its graphitic nanostructure and highly active Co-Nx sites. In the case of carefully optimized sample of this electrocatalyst, 10 mA cm(-2) current density can be achieved for two half reactions in alkaline solutions-hydrogen evolution reaction and oxygen evolution reaction-at low overpotentials of 220 and 350 mV, respectively, which are smaller than those previously reported for nonprecious metal and metal-free counterparts. Based on the spectroscopic and electrochemical investigations, the newly identified Co-Nx sites in the carbon framework are responsible for high electrocatalytic activity of the Co,N-doped carbon. This study indicates that a trace level of the introduced Co into N-doped carbon can significantly enhance its electrocatalytic activity toward water splitting. PMID:27246288

  10. Paramagnetic behavior of Co doped TiO2 nanocrystals controlled by self-purification mechanism

    NASA Astrophysics Data System (ADS)

    Anitha, B.; Khadar, M. Abdul; Banerjee, Alok

    2016-07-01

    Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO2 doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO2 along with weak intensity peaks of Co3O4 for higher Co dopant concentrations were observed for the samples. EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO2 matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO2 nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co2+ ions and an increased presence of Co3O4 phase near the surface of the TiO2 nanocrystals due to self-purification mechanism.

  11. Room temperature magnetization in Co-doped anatase phase of TiO2

    NASA Astrophysics Data System (ADS)

    Karimipour, Masoud; Mageto, Maxwel Joel; Etefagh, Reyhaneh; Azhir, Elahe; Mwamburi, Mghendi; Topalian, Zareh

    2013-01-01

    CoxTi1-xO2 films were deposited by spray pyrolysis technique on Si(1 0 0) substrates at 475 °C. A hydro-alcoholic solution containing titanium (iv) isopropoxide and Co(NO3)2 with various Co doping levels from x = 0-0.015 in solution was used as spray solution. Grazing incident angle of X-ray diffraction illustrates that the CoxTi1-xO2 films are single phase and polycrystal with mixed orientations. Study of surface morphology of the films by atomic force microscope reveals that the annealing atmosphere does not significantly affect the grain size and the microstructure of the films. This study provides further insight into the importance of annealing atmosphere on magnetization of the films. Room temperature magneto-optical Kerr measurement was employed in polar mode. A hysteresis loop and a paramagnetic behavior have been recorded for samples annealed in H2 ambient gas and air, respectively. Chemical composition analysis by X-ray photo-electron spectroscopy showed that Co atoms are bounded to oxygen and no metallic clusters are present. Moreover, it indicates the formation of high spin Co2+ for the sample x = 0.008 annealed in H2 ambient gas. The origin of magnetization can be attributed to the contribution of oxygen vacancies in the spin polarization of the structure.

  12. Thermal analysis and temperature dependent dielectric responses of Co doped anatase TiO2 nanoparticles

    NASA Astrophysics Data System (ADS)

    Alamgir, Khan, Wasi; Ahmad, Shabbir; Ahammed, Nashiruddin; Naqvi, A. H.

    2015-05-01

    Nanoparticles (NPs) of pure and 5 mol % cobalt doped TiO2 synthesized through acid modified sol-gel method were characterized to understand their thermal, structural, morphological, and temperature dependent dielectric properties. Thermogravimetric analysis (TGA) has been used for thermal studies and indicates the weight loss in two steps due to the removal of residual organics. X-ray diffraction study was employed to confirm the formation of single anatase phase with tetragonal symmetry for both pure and 5 mol % Co doped TiO2 NPs. The average crystallite size of both samples was calculated from the Scherrer's formula and was found in the range from 9-11 nm. TEM micrographs of these NPs reflect their shape and distribution. The dielectric constant (ɛ'), dielectric loss (tanδ) and ac conductivity (σac) were also studied as a function of temperature at different frequencies. Electrical responses of the synthesized NPs have been analyzed carefully in the framework of relevant models. It is also noticed that the dielectric constant (ɛ') of the samples found to decrease with increasing frequency but increases with increasing temperature up to a particular value and then sharply decreases. Temperature variation of dielectric constant exhibits step like escalation and shows relaxation behavior. Study of dielectric properties shows dominant dependence on the grain size as well as Co ion incorporation in TiO2.

  13. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    NASA Astrophysics Data System (ADS)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  14. NEXAFS and XMCD studies of single-phase Co doped ZnO thin films.

    PubMed

    Singh, Abhinav Pratap; Kumar, Ravi; Thakur, P; Brookes, N B; Chae, K H; Choi, W K

    2009-05-01

    A study of the electronic structure and magnetic properties of Co doped ZnO thin films synthesized by ion implantation followed by swift heavy ion irradiation is presented using near-edge x-ray absorption fine structure (NEXAFS) and x-ray magnetic circular dichroism (XMCD) measurements. The spectral features of NEXAFS at the Co L(3,2)-edge show entirely different features than that of metallic Co clusters and other Co oxide phases. The atomic multiplet calculations are performed to determine the valence state, symmetry and the crystal field splitting, which show that in the present system Co is in the 2+ state and substituted at the Zn site in tetrahedral symmetry with 10Dq = -0.6 eV. The ferromagnetic character of these materials is confirmed through XMCD spectra. To rule out the possibilities of defect induced magnetism, the results are compared with Ar annealed and Ar-ion implanted pure ZnO thin films. The presented results confirm the substitution of Co at the Zn site in the ZnO matrix, which is responsible for room temperature ferromagnetism. PMID:21825451

  15. Microstructure of Co-doped TiO₂ (110) Rutile by Ion Implantation

    SciTech Connect

    Wang, Chong M.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Droubay, Timothy C.; Chambers, Scott A.

    2005-04-01

    Co-doped rutile TiO₂ was synthesized by injecting Co ions into single crystal rutile TiO₂ using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy (EDS), electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO₂ lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10¹⁶ Co/cm². Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO₂ matrix exhibit the orientation relationships Co<110>//TiO₂[001] and Co{111}//TiO₂(110). A structural model representing the interface between Co metal clusters and TiO₂ is developed based on HRTEM imaging and image simulations.

  16. Microstructure of Co-doped TiO{sub 2}(110) rutile by ion implantation

    SciTech Connect

    Wang, C.M.; Shutthanandan, V.; Thevuthasan, S.; Droubay, T.; Chambers, S.A.

    2005-04-01

    Co-doped rutile TiO{sub 2} was synthesized by injecting Co ions into single crystal rutile TiO{sub 2} using high energy ion implantation. Microstructures of the implanted specimens were studied in detail using high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray spectroscopy, electron diffraction, and HRTEM image simulations. The spatial distribution and conglomeration behavior of the implanted Co ions, as well as the point defect distributions induced by ion implantation, show strong dependences on implantation conditions. Uniform distribution of Co ions in the rutile TiO{sub 2} lattice was obtained by implanting at 1075 K with a Co ion fluence of 1.25x10{sup 16} Co/cm{sup 2}. Implanting at 875 K leads to the formation of Co metal clusters. The precipitated Co metal clusters and surrounding TiO{sub 2} matrix exhibit the orientation relationships Co<110> parallel TiO{sub 2}[001] and Co{l_brace}111{r_brace} parallel TiO{sub 2}(110). A structural model representing the interface between Co metal clusters and TiO{sub 2} is developed based on HRTEM imaging and image simulations.

  17. Enhanced ferromagnetic properties in Ho and Ni co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Park, J. S.; Yoo, Y. J.; Hwang, J. S.; Kang, J.-H.; Lee, B. W.; Lee, Y. P.

    2014-01-01

    The magnetic properties of polycrystalline Bi1-xHoxFe1-yNiyO3 (x = 0, 0.1; y = 0, 0.03), which were prepared by the solid-state method, have been investigated. The powder X-ray diffraction reveals that all the samples are polycrystalline and show rhombohedral perovskite structure. The micro-Raman scattering studies confirm that Bi0.9Ho0.1Fe0.97Ni0.03O3 has a compressive lattice distortion induced by the simultaneous substitution of Ho and Ni ions at A and B-sites, respectively. From the magnetization dependences at room temperature, Bi0.9Ho0.1Fe0.97Ni0.03O3 has enhanced magnetization (0.2280 emu/g) and low coercive field (280 Oe). It was revealed that the Ni dopant plays an important role for the improved ferromagnetic properties and the Ho dopant favors the magnetic exchange interactions in the co-doped ceramic.

  18. Boron and nitrogen co-doped porous carbon and its enhanced properties as supercapacitor

    NASA Astrophysics Data System (ADS)

    Guo, Hongliang; Gao, Qiuming

    Boron and nitrogen co-doped porous carbons (BNCs) were prepared through a facile procedure using citric acid, boric acid and nitrogen as C, B and N precursors, respectively. The BNC samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and nitrogen sorption at 77 K. Cyclic voltammetry and galvanostatic charge/discharge experiments were adopted to investigate their electrochemical behaviors. The BNC-9 and BNC-15 samples with high specific surface areas of 894 and 726 m 2 g -1 showed the large specific capacitance up to 268 and 173 F g -1, respectively, with the current of 0.1 A g -1. When the current was set as 1 A g -1, the energy densities were 3.8 and 3.0 Wh kg -1 and the power densities were 165 and 201 W kg -1 for BNC-9 and BNC-15, respectively. Thus, BNC-15 is more suitable to apply in high-power-demanded occasion, while BNC-9 tends to store more energy.

  19. Visible light carrier generation in co-doped epitaxial titanate films

    NASA Astrophysics Data System (ADS)

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason B.; Chambers, Scott A.

    2015-03-01

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4-2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  20. Study of cation magnetic moment directions in Cr (Co) doped nickel ferrites

    NASA Astrophysics Data System (ADS)

    Lang, L. L.; Xu, J.; Qi, W. H.; Li, Z. Z.; Tang, G. D.; Shang, Z. F.; Zhang, X. Y.; Wu, L. Q.; Xue, L. C.

    2014-09-01

    Powder samples of the ferrites MxNi1-xFe2O4 (M = Cr, Co and 0.0 ≤ x ≤ 0.3) were prepared using a chemical co-precipitation method. X-ray diffraction analysis showed that the two series of samples had a single-phase cubic spinel structure. It was found that the magnetic moments (μexp) per formula of samples measured at 10 K decreased when Cr substituted for Ni, but increased when Co substituted for Ni, in spite of the fact that the magnetic moments of Cr2+ (4 μB) and Co2+ (3 μB) are higher than that of Ni2+ (2 μB). With the assumption that the magnetic moments of Cr2+ and Cr3+ lie antiparallel to those of the Fe, Co, and Ni cations in the same sublattices of spinel ferrites, the dependences on the Cr (Co) doping level of the sample magnetic moments at 10 K were fitted successfully, using the quantum-mechanical potential barrier model earlier proposed by our group. For the two series of samples, the fitted magnetic moments are close to the experimental results.

  1. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B.; Smolin, Sergey Y.; Kaspar, Tiffany C.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.; Baxter, Jason; Chambers, Scott A.

    2015-03-02

    Perovskite titanates such as SrTiO3 (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity—which may be valuable in photovoltaic applications—and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr3+ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance measurements confirm that optically generated carriers have a recombination lifetime comparable to that of STO and are in agreement with the observations from ellipsometry. Finally, through photoelectrochemical yield measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  2. Visible light carrier generation in co-doped epitaxial titanate films

    SciTech Connect

    Comes, Ryan B. Kaspar, Tiffany C.; Chambers, Scott A.; Smolin, Sergey Y.; Baxter, Jason B.; Gao, Ran; Apgar, Brent A.; Martin, Lane W.; Bowden, Mark E.

    2015-03-02

    Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.

  3. Understanding electronic and optical properties of anatase TiO2 photocatalysts co-doped with nitrogen and transition metals.

    PubMed

    Meng, Qingsen; Wang, Tuo; Liu, Enzuo; Ma, Xinbin; Ge, Qingfeng; Gong, Jinlong

    2013-06-28

    This paper describes an investigation into the general trend in electronic properties of anatase TiO2 photocatalysts co-doped with transition metals and nitrogen employing first-principles density functional theory. Fourteen different transition metals (M), including Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, and Cd, have been considered. The characteristic band structures of the co-doping systems involving the transition metal series are presented. Our results indicate that the absorption edges of TiO2 are shifted to the visible-light region upon introduction of dopants, due to the reduced conduction band minimum (CBM) and the formation of impurity energy levels (IELs) in the band gap. These IELs are primarily formed from (a) the anti-bonding orbitals of the M-O (M indicates the doped transition metal) bonds, (b) the unsaturated nonbonding d orbitals of the doped transition metal (mainly d(xy), d(yz), and d(xz)), and (c) the Ti-O bonding/Ti-N anti-bonding orbitals of the bond next to the doped transition metal. When the valence d electrons of the doped metal are between 3 and 7, all three types of IELs appear in the band gap of the (M, N) co-doped systems. For systems doped with a metal of more than 7 valence electrons, only types (a) and (c) of IELs as well as the unoccupied pz state of N are observed. Based on our analysis, we propose that the co-doping systems such as (V, N), (Cr, N), and (Mn, N), which have the IELs with a significant bandwidth, are of great potential as candidates for photovoltaic applications in the visible light range. PMID:23652827

  4. Origin of enhanced multiferroic properties in Dy and Co co-doped BiFeO3 ceramics

    NASA Astrophysics Data System (ADS)

    Yoo, Y. J.; Hwang, J. S.; Lee, Y. P.; Park, J. S.; Rhee, J. Y.; Kang, J.-H.; Lee, K. W.; Lee, B. W.; Seo, M. S.

    2015-01-01

    Structural, magnetic and ferroelectric properties of polycrystalline BiFeO3, Bi0.9Dy0.1FeO3, BiFe0.97Co0.03O3 and Bi0.9Dy0.1Fe0.97Co0.03O3, which were prepared by solid-state method, have been investigated. The X-ray diffraction (XRD) patterns reveal that all the samples are in single phase and show rhombohedrally distorted perovskite structure with R3c space group. Both XRD and Raman-scattering studies show that Dy and Co co-doped sample has a compressive lattice distortion induced by co-substitution of Dy and Co ions at the A and the B sites, respectively. Dy and Co co-doping favors weak ferromagnetism ordering with evident magnetic hysteresis loop and enhances magnetization values at room temperature. Ferroelectric hysteresis loop for Dy and Co co-doped sample shows the nearly saturated polarization at 40 kV/cm and large remnant polarization. Dy dopant is prominent in the reduced leakage current density, while Co dopant is remarkable in the improved remnant magnetization in Bi0.9Dy0.1Fe0.97Co0.03O3 ceramic. By using a simple model, it was found that the anharmonicity of canted spiral cycloidal spin structure was responsible for the weak ferromagnetism of pure BiFeO3, and the enhanced magnetization in Co-doped sample was attributed to the transition from the incommensurate cycloidal spiral spin structure towards the G-type canted collinear antiferromagnetic structure.

  5. Computational discovery of lanthanide doped and Co-doped Y{sub 3}Al{sub 5}O{sub 12} for optoelectronic applications

    SciTech Connect

    Choudhary, Kamal; Chernatynskiy, Aleksandr; Phillpot, Simon R.; Sinnott, Susan B.; Mathew, Kiran; Bucholz, Eric W.; Hennig, Richard G.

    2015-09-14

    We systematically elucidate the optoelectronic properties of rare-earth doped and Ce co-doped yttrium aluminum garnet (YAG) using hybrid exchange-correlation functional based density functional theory. The predicted optical transitions agree with the experimental observations for single doped Ce:YAG, Pr:YAG, and co-doped Er,Ce:YAG. We find that co-doping of Ce-doped YAG with any lanthanide except Eu and Lu lowers the transition energies; we attribute this behavior to the lanthanide-induced change in bonding environment of the dopant atoms. Furthermore, we find infrared transitions only in case of the Er, Tb, and Tm co-doped Ce:YAG and suggest Tm,Ce:YAG and Tb,Ce:YAG as possible functional materials for efficient spectral up-conversion devices.

  6. Measurement of [N] dependence of electron effective mass in GaAsN

    NASA Astrophysics Data System (ADS)

    Dannecker, Tassilo; Jin, Yu; Buckeridge, John; Uher, Ctirad; Kurdak, Cagliyan; Fahy, Stephen; Goldman, Rachel S.

    2010-03-01

    The electron effective mass of GaAs1-xNx is predicted to be dependent on N-composition, x; however, conflicting results have been observed using cyclotron resonance and thermomagnetic measurements. Using room temperature thermopower and Hall measurements, in conjunction with assumptions of parabolic bands and Fermi-Dirac statistics, we determined the N composition dependence of the electron effective mass of GaAs1-xNx, in comparison with that of GaAs. Measurements of the Seebeck coefficient, S, for N compositions ranging from x=0 to 0.018, reveal a decrease in S with increasing x. The free carrier concentration, [n], for all GaAsN is lower than for GaAs. For GaAs, we extract an effective mass value of 0.052me, slightly lower than the literature value of 0.067m0. For GaAsN, the effective mass apparently is in all cases greater than for GaAs but varies non-monotonically with x, revealing a minimum at x=0.010 and maxima at x=0.004 and 0.018. This non-monotonic dependence of m* on x cannot be explained with a simple band anti-crossing (BAC) model. Interestingly, this data is consistent with the predictions of Lindsay et al, suggesting the presence of resonances between N-related states and the GaAsN conduction band edge.

  7. Preparation and photocatalytic activity of B, Ce Co-doped TiO2 hollow fibers photocatalyst

    NASA Astrophysics Data System (ADS)

    Qiu, Jingping; Sun, Xiaogang; Xing, Jun; Liu, Xiaobo

    2014-07-01

    A series of B, Ce co-doped TiO2 (B, Ce-TiO2) photocatalytic materials with a hollow fiber structure were successfully prepared by template method using boric acid, ammonium ceric nitrate and tetrabutyltitanate as precursors and cotton fibers as template, followed by calcination at 500°C in an N2 atmosphere for 2 h. Scanning electron microscopy (SEM), X-ray diffraction (XRD), nitrogen adsorption-desorption measurements, and UV-visible spectroscopy (UV-Vis) were employed to characterize the morphology, crystal structure, surface structure, and optical absorption properties of the samples. The photocatalytic performance of the samples was studied by photodegradation phenol in water under UV light irradiation. The results showed that the TiO2 fiber materials have hollow structures, and the fiber structure materials showed better photocatalytic properties for the degradation of phenol than pure TiO2 under UV light. In the experiment condition, the photocatalytic activity of B, Ce co-doped TiO2 fibers was optimal of all the prepared samples. In addition, the possibility of cyclic usage of B, Ce co-doped TiO2 fiber photocatalyst was also confirmed, the photocatalytic activity of TiO2 fibers remained above 90% of that of the fresh sample after being used four times. The material was easily removed by centrifugal separation from the medium. It can therefore be potentially applied for the treatment of water contaminated by organic pollutants.

  8. Optical and magnetic properties of Co-doped CuO flower/plates/particles-like nanostructures.

    PubMed

    Basith, N Mohamed; Vijaya, J Judith; Kennedy, L John; Bououdina, M; Hussain, Shamima

    2014-03-01

    In this study, pure and Co-doped CuO nanostructures (0.5, 1.0, 1.5, and 2.0 at wt% of Co) were synthesized by microwave combustion method. The prepared samples were characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HR-SEM), energy dispersive X-ray analysis (EDX), diffuse reflectance spectroscopy (DRS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). Powder X-ray diffraction patterns refined by the Rietveld method indicated the formation of single-phase monoclinic structure. The surface morphology and elemental analysis of Co-doped CuO nanostructures were studied by using HR-SEM and EDX. Interestingly, the morphology was found to change considerably from nanoflowers to nanoplates then to nanoparticles with the variation of Co concentration. The optical band gap calculated using DRS was found to be 2.1 eV for pure CuO and increases up to 3.4 eV with increasing cobalt content. Photoluminescence measurements also confirm these results. The magnetic measurements indicated that the obtained nanostructures were ferromagnetic at room temperature with an optimum value of saturation magnetization at 1.0 wt.% of Co-doped CuO, i.e., 970 micro emu/g. PMID:24745266

  9. Near-infrared emission and energy transfer in tellurite glasses co-doped with erbium and thulium ions

    NASA Astrophysics Data System (ADS)

    Zmojda, Jacek; Kochanowicz, Marcin; Ragin, Tomasz; Dorosz, Dominik; Sitarz, Maciej

    2014-05-01

    In the paper optical properties of 40TeO2 - 20GeO2 - 30(PbO - PbF2)- 10(BaO - Nb2O5 - LaF3) glass system co-doped with Er3+/Tm3+ ions were investigated. The maximum of phonon energy at 790cm-1 in fabricated tellurite glass which was determined by FTIR measurements. Optimisation of glass composition led to the emission at 1820 nm which was observed in results of energy transfer (ET) between Er3+and Tm3+ions under the optical exciting at 976 nm. In order to determine the optimal conditions of ET between exited energy levels of co-doped RE ionsthe dependence of the near-infrared emission upon the thulium ions concentration was studied. In result of that broadband emission in the range from1500 to 1900 nm was achieved owing to the superposition of electronic transition in Er3+ (4I13/2 → 4I15/2) and Tm3+ (3F4 → 3H6) ions.The highest efficiency of energy transfer was obtained in glass co-doped with 0.2Er2O3/0.3 Tm2O3.

  10. Gain and noise figure enhancement of Er+3/Yb+3 co-doped fiber/Raman hybrid amplifier

    NASA Astrophysics Data System (ADS)

    Mahran, O.

    2016-02-01

    An Er/Yb co-doped fiber/Raman hybrid amplifier (HA) is proposed and studied theoretically and analytically to improve the gain and noise figure of optical amplifiers. The calculations are performed under a uniform dopant and steady-state conditions. The initial energy transfer efficiency for Er/Yb co-doped fiber amplifier (EYDFA) is introduced, while the amplified spontaneous emission (ASE) is neglected. The glass fiber used for both Er/Yb and Raman amplifiers is phosphate. Different pump powers are used for both EYDFA and RA with 1 μW input signal power, 1 m length of Er/Yb amplifier and 25 km length of Raman amplifier (RA). The proposed model is validated for Er/Yb co-doped amplifier and Raman amplifier separately by comparing the calculating results with the experimental data. A high gain and low noise figure at 200 mW Raman pump power and 500 mW Er/Yb pump power are obtained for the proposed HA as compared with the experimental results of EYDFA, Raman amplifier and the EDFA/Raman hybrid amplifier.

  11. Microstructure and magnetism of sol-gel synthesized Co-doped PbPdO2 nanograin film

    NASA Astrophysics Data System (ADS)

    Song, T. T.; Tang, F. L.; Su, H. L.; Chuang, P. Y.; Liu, J.; Mei, C.; Huang, S. Y.; Lee, M. K.; Huang, J. C. A.; Wu, Y. C.

    2016-06-01

    The single-phase body-centered-orthorhombic-structured Co-doped PbPdO2 thin film was obtained using the sol-gel spin-coating method and an oxidation treatment. The film had a nanograin microstructure with an average grain size of about 56 nm and a thickness of about 150 nm. The adoption of a moderate calcination temperature of 650 °C was found to be very important for preparing the single-phase-PbPdO2-based film with a high crystalline quality. The magnetic studies exhibited that the ferromagnetism and the paramagnetism coexist within the formed Co-doped PbPdO2 film and the ferromagnetism can be maintained above room temperature. The saturation magnetization of the ferromagnetism increasing with the temperature, as the peculiar characteristic of the spin gapless semiconductor, was found within the film. The investigation on the film's X-ray absorption near-edge structure revealed that the ferromagnetism of the Co-doped PbPdO2 is intrinsic.

  12. A novel anode comprised of C&N co-doped Co3O4 hollow nanofibres with excellent performance for lithium-ion batteries.

    PubMed

    Yan, Chunshuang; Chen, Gang; Sun, Jingxue; Zhou, Xin; Lv, Chade

    2016-07-20

    C&N co-doped Co3O4 hollow nanofibres are prepared by combining the electrospinning technique and the hydrothermal method, which show a high reversible capacity and excellent cycling stability as anode materials for Li-ion batteries. DFT calculations give a good explanation for the experimentally enhanced conductivity in C&N co-doped Co3O4 hollow nanofibres. PMID:27389924

  13. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  14. Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Huang, Yang; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Yao; Wu, Shaoteng; Yuan, Guodong; Wang, Junxi; Wang, Guohong; Li, Jinmin

    2016-07-01

    A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley-Read-Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common “ABC + f(n) model”, the “new model” is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.

  15. Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells

    SciTech Connect

    Zhu, L. P.; Liu, Y.; Jiang, C. Y.; Qin, X. D.; Li, Y.; Gao, H. S.; Chen, Y. H.

    2014-02-28

    The excitation wavelength dependence of the anomalous circular photogalvanic effect (ACPGE) current arising from the reciprocal spin Hall effect (RSHE) in undoped InGaAs/AlGaAs quantum wells is measured under normal incidence of circularly polarized light at room temperature. We found that the spot location with the maximum ACPGE current is wavelength independent. And the normalized ACPGE current decreases at smaller wavelengths, which can be attributed to the sharp decrease of the spin relaxation time (τ{sub s}) and the hot electron relaxation time (τ{sub 1}) at smaller wavelengths. The study of the excitation wavelength dependence of ACPGE current is a good supplement to the in-depth investigation of RSHE.

  16. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices

    NASA Astrophysics Data System (ADS)

    Baykan, Mehmet Onur

    Strained silicon technology is a well established method to enhance sub-100nm MOSFET performance. With the scalability of process-induced strain, strained silicon channels have been used in every advanced CMOS technology since the 90nm node. At the 22nm node, due to the detrimental short channel effects, non-planar silicon CMOS has emerged as a viable solution to sustain transistor scaling without compromising the device performance. Therefore, it is necessary to conduct a physics based investigation of the effects of mechanical strain in silicon MOS device performance enhancement, as the transverse and longitudinal device dimensions scale down for future technology nodes. While silicon is widely used as the material basis for logic transistors, AlGaN/GaN HEMTs promise a superior device platform over silicon based power MOSFETs for high-frequency and high-power applications. In contrast to the mature Si crystal growth technology, the abundance of defects in the GaN material system creates obstacles for the realization of a reliable AlGaN/GaN HEMT device technology. Due to the high levels of internal mechanical strain present in AlGaN/GaN HEMTs, it is of utmost importance to understand the impact of mechanical stress on AlGaN/GaN trap generation. First, we have investigated the underlying physics of the comparable electron mobility observed in (100) and (110) sidewall silicon double-gate FinFETs, which is different from the observed planar (100) and (110) electron mobility. By conducting a systematic experimental study, it is shown that the undoped body, metal gate induced stress, and volume-inversion effects do not explain the comparable electron mobility. Using a self-consistent double-gate FinFET simulator, we have showed that for (110) FinFETs, an increased population of electrons is obtained for the Delta2 valley due to the heavy nonparabolic confinement mass, leading to a comparable average electron transport effective mass for both orientations. The width

  17. Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors

    SciTech Connect

    Wu, Yi-Chen; Tsai, Jung-Hui; Chiang, Te-Kuang; Chiang, Chung-Cheng; Wang, Fu-Min

    2015-02-15

    DC performance of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistors (DCFETs) is demonstrated and compared by two-dimensional simulated analysis. As compared with the traditional InP/InGaAs DCFET, the GaAsSb/InGaAs DCFET exhibits a higher drain current of 8.05 mA, a higher transconductance of 216.24 mS/mm, and a lower gate turn-on voltage of 0.25 V for the presence of a relatively large conduction band discontinuity (ΔE{sub c} ≈ 0.4 eV) at GaAsSb/InGaAs heterostructure and the formation of two-dimensional electron gas in the n{sup +}-InGaAs doping channel. However, due to the tunneling effect under large gate-to-source bias, it results in considerably large gate leakage current in the GaAsSb/InGaAs DCFET.

  18. Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Saran Yalamarthy, Ananth; Senesky, Debbie G.

    2016-03-01

    This paper presents a physics-based model for computing the combined effect of applied strain and temperature on the device characteristics of aluminium gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). More specifically, the electrical response of the HEMT is predicted under applied biaxial strain from ±1% over a wide range of temperatures (300-500 K). In addition, the interface state densities at the Schottky-AlGaN interface are introduced in the model. This physics-based model calculates the charge due to applied, thermal and lattice mismatch strain and temperature effects at the two-dimensional electron gas (2DEG) interface of the HEMT. Coupled with a model for the 2DEG mobility that includes strain and temperature effects, current-voltage characteristics for the HEMT are derived above the threshold voltage. Regimes with large strain sensitivity and temperature compensation are identified and vice-versa. The analysis from the model clarifies the large range of strain response variations observed in the experimentally measured characteristics of HEMTs in literature. Furthermore, the developed model is a useful tool for predicting the response of HEMTs used in sensing and under the influence of packaging in extreme environments, especially when temperature fluctuation and strain coupling is of concern.

  19. The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Tsai, Ming-Ta; Chu, Chung-Ming; Huang, Che-Hsuan; Wu, Yin-Hao; Chiu, Ching-Hsueh; Li, Zhen-Yu; Tu, Po-Min; Lee, Wei-I.; Kuo, Hao-Chung

    2014-12-01

    In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between carrier localization degree and FS-GaN. The micro-Raman shift peak mapping image shows low standard deviation (STD), indicating that the UV-LED epi-wafer of low curvature and MQWs of weak quantum-confined Stark effect (QCSE) were grown. High-resolution X-ray diffraction (HRXRD) analyses demonstrated high-order satellite peaks and clear fringes between them for the UV-LEDs grown on the FS-GaN substrate, from which the interface roughness (IRN) was estimated. The temperature-dependent photoluminescence (PL) measurement confirmed that the UV-LEDs grown on the FS-GaN substrate exhibited better carrier confinement. Besides, the high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) mapping images verified that the UV-LEDs on FS-GaN have fairly uniform distribution of indium and more ordered InGaN/AlInGaN MQW structure. Clearly, the FS-GaN can not only improve the light output power but also reduce the efficiency droop phenomenon at high injection current. Based on the results mentioned above, the FS-GaN can offer UV-LEDs based on InGaN/AlInGaN MQW structures with benefits, such as high crystal quality and small carrier localization degree, compared with the UV-LEDs on sapphire.

  20. Spin Effects in the n-InxGa1-xAs/GaAs Double Quantum Well Magnetoresistance Under Tilted Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Yakunin, M. V.; Arapov, Yu. G.; Neverov, V. N.; Podgornyh, S. M.; Shelushinina, N. G.; Harus, G. I.; Zvonkov, B. N.; Uskova, E. A.

    2007-04-01

    Precise scanning of the (B⊥,B∥) plane while measuring magnetoresistance of the n-InGaAs/GaAs double quantum well (DQW) reveals a number of peculiarities connected with intricate DQW energy spectrum, which are analyzed on the basis of quasiclassical calculations. Magnetic breakdown effects are also considered. Peaks due to the latter mechanism reveal spin-splittings (in spite of lower mobilities as compared with the traditional n-GaAs/AlGaAs DQWs) corresponding to an enhanced effective Lande g-factor.

  1. AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

    NASA Technical Reports Server (NTRS)

    Yngvesson, K. S.; Yang, J.-X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K. M.

    1992-01-01

    The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

  2. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  3. Ion-implanted GaN junction field effect transistor

    SciTech Connect

    Zolper, J.C.; Shul, R.J.; Baca, A.G.; Wilson, R.G.; Pearton, S.J.; Stall, R.A.

    1996-04-01

    Selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs). {ital p}-type and {ital n}-type doping was achieved with Ca and Si implantation, respectively, followed by a 1150{degree}C rapid thermal anneal. A refractory W gate contact was employed that allows the {ital p}-gate region to be self-aligned to the gate contact. A gate turn-on voltage of 1.84 V at 1 mA/mm of gate current was achieved. For a {approximately}1.7 {mu}m{times}50 {mu}m JFET with a {minus}6 V threshold voltage, a maximum transconductance of 7 mS/mm at {ital V}{sub GS}={minus} 2V and saturation current of 33 mA/mm at {ital V}{sub GS}=0 V were measured. These results were limited by excess access resistance and can be expected to be improved with optimized {ital n}{sup +} implants in the source and drain regions. {copyright} {ital 1996 American Institute of Physics.}

  4. Effect on Sb on the Properties of GaInP Top Cells: Preprint

    SciTech Connect

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01

    It is well known that the efficiency of GaInP/GaAs tandem solar cells is limited by the band gap of the GaInP top cell, which, in turn, is determined by the degree of compositional ordering in GaInP base layer. Attempts to raise the band gap by the addition of Al to the top cell have met with limited success due to the strong affinity between Al and oxygen. Here we investigate a different approach. It has been shown that the presence of antimony on the surface of GaInP during its growth suppresses the ordering process and increases the band gap. In this paper, we study the effects of Sb on the properties of GaInP top cells. We show that, in addition to raising the band gap of GaInP, it also increases the incorporation of Zn and changes the relative incorporation of Ga and In. These effects depend strongly on the substrate orientation, growth temperature and rate, and the Sb/P ratio in the gas phase. We show that the band gap of the GaInP top cell (and the Voc) can be increased without reducing the minority carrier collection efficiency. The implications of these results are presented and discussed.

  5. Effects of traps and polarization charges on device performance of AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Hussein, A. SH.; Ghazai, Alaa J.; Salman, Emad A.; Hassan, Z.

    2013-11-01

    This paper presents the simulated electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by using ISE TCAD software. The effects of interface traps, bulk traps and polarization charges are investigated. It was observed that the role and dynamic of traps affect the device performance which requires a precondition to calculate the DC characteristics that are in agreement with the experimental data. On the other hand, polarization charges lead to quantum confinement of the electrons in the channel and form two-dimensional electron gas. The electron quantization leads to increasing the drain current and shift in the threshold voltage. The device performance can be improved by optimizing the fixed interface charge and thus reducing the bulk traps to enhance the DC characteristics.

  6. The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays.

    PubMed

    Jiao, Qianqian; Chen, Zhizhong; Feng, Yulong; Li, Shunfeng; Jiang, Shengxiang; Li, Junze; Chen, Yifan; Yu, Tongjun; Kang, Xiangning; Shen, Bo; Zhang, Guoyi

    2016-12-01

    InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored. PMID:27440081

  7. The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays

    NASA Astrophysics Data System (ADS)

    Jiao, Qianqian; Chen, Zhizhong; Feng, Yulong; Li, Shunfeng; Jiang, Shengxiang; Li, Junze; Chen, Yifan; Yu, Tongjun; Kang, Xiangning; Shen, Bo; Zhang, Guoyi

    2016-07-01

    InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.

  8. Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells

    SciTech Connect

    Pikhtin, A. N. Komkov, O. S.; Bazarov, K. V.

    2006-05-15

    The effect of external electric field on interband optical transitions in single In{sub x}Ga{sub 1-x}As/GaAs quantum wells is studied by electroreflectance spectroscopy. A procedure is suggested for separating the contribution of particular exciton transitions to the complicated modulation spectrum. Nontrivial field dependences of the probability of optical transitions forbidden by the symmetry are observed experimentally. The data are compared with the corresponding theoretical dependences. The strength of the internal electric field in the region of the quantum well is determined from Frantz-Keldysh's oscillations. Under certain electric fields, the probability of transitions forbidden with no field is higher than the probability of transitions allowed by the symmetry.

  9. Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling

    NASA Astrophysics Data System (ADS)

    Redondo-Cubero, A.; Lorenz, K.; Franco, N.; Fernández-Garrido, S.; Gago, R.; Smulders, P. J. M.; Muñoz, E.; Calleja, E.; Alves, E.

    2009-03-01

    Ion steering effects in the interface of heterostructures can strongly influence the shape and position of angular channelling scans leading to considerable error in the determination of strain by ion channelling. As an example, this paper presents channelling measurements on a near-lattice-matched AlGaInN/GaN heterostructure which show no shift between the angular scans from the quaternary layer and the underlying GaN substrate although high resolution x-ray diffraction data confirm the presence of strain in the layer. Such 'anomalous' behaviour was studied by means of Monte Carlo simulations for nitride ternary and quaternary films in the whole composition range. The simulations show that the thickness, magnitude of the distortion of the strained lattice and energy of the probing beam are critical parameters controlling the impact of steering. Three composition/strain regions were established for a typical beam of 2 MeV alpha particles corresponding to different intensities of the steering potential and in which strain measurements by ion channelling are (a) correct, (b) possible but require corrections and (c) not possible due to steering effects.

  10. Effect of buffer layer and external stress on magnetic properties of flexible FeGa films

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaoshan; Zhan, Qingfeng; Dai, Guohong; Liu, Yiwei; Zuo, Zhenghu; Yang, Huali; Chen, Bin; Li, Run-Wei

    2013-05-01

    We systematically investigated the effect of a Ta buffer layer and external stress on the magnetic properties of magnetostrictive Fe81Ga19 films deposited on flexible polyethylene terephthalate (PET) substrates. The Ta buffer layers could effectively smoothen the rough surface of PET. As a result, the FeGa films grown on Ta buffer layers exhibit a weaker uniaxial magnetic anisotropy and lower coercivity, as compared to those films directly grown on PET substrates. By inward and outward bending the FeGa/Ta/PET samples, external in-plane compressive and tensile stresses were applied to the magnetic films. Due to the inverse magnetostrictive effect of FeGa, both the coercivity and squareness of hysteresis loops for FeGa/Ta films could be well tuned under various strains.

  11. Gibberellic acid (GA3) effects on late season grapefruit peel oil composition

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Gibberellic acid (GA3) is commonly applied to citrus fruit in the late summer/early autumn to delay peel maturation and extend late season quality. The effect of August/September GA3 application on oil gland composition of "Marsh" white grapefruit harvested in March 18 and April 16 from three groves...

  12. Novel tannin-based Si, P co-doped carbon for supercapacitor applications

    NASA Astrophysics Data System (ADS)

    Ramasahayam, Sunil Kumar; Nasini, Udaya B.; Shaikh, Ali U.; Viswanathan, Tito

    2015-02-01

    Increasing environmental pollution and population compounded by a decrease in the availability of non-renewable resources and fossil fuels has propelled the need for sustainable alternate energy storage technologies particularly in the last two decades. An attempt to meet this crisis was carried out by a unique, microwave-assisted method which has enabled the generation of a novel Si, P co-doped carbon (SiPDC) for supercapacitor applications. The microwave-assisted method is useful in developing SiPDC at a rapid and economical fashion that does not employ any inert or reducing gases, but is high yielding. Varying proportions of precursor materials were utilized to generate four SiPDCs (SiPDC-1, SiPDC-2, SiPDC-3 and SiPDC-4) with varying contents of dopants as evidenced by X-ray photoelectron spectroscopic (XPS) results. Surface area and pore size analysis revealed that SiPDC-2 has a surface area of 641.51 m2 g-1, abundant micropores, mesopores and macropores which are critical for electrical double layer capacitance (EDLC). Of all the SiPDCs, SiPDC-2 exhibited highest capacitance of 276 F g-1 in 1 M H2SO4 and 244 F g-1 in 6 M KOH at a scan rate of 5 mV s-1. Galvanostatic charge-discharge studies performed in 6 M KOH establish the high capacitance of SiPDC-2. SiPDC-2 also exhibited excellent electrochemical stability in 1 M H2SO4 and 6 M KOH.

  13. Magnetic nanoparticles formed in glasses co-doped with iron and larger radius elements

    SciTech Connect

    Edelman, I.; Ivanova, O.; Ivantsov, R.; Velikanov, D.; Zabluda, V.; Zubavichus, Y.; Veligzhanin, A.; Zaikovskiy, V.; Stepanov, S.; Artemenko, A.; Curely, J.; Kliava, J.

    2012-10-15

    A new type of nanoparticle-containing glasses based on borate glasses co-doped with low contents of iron and larger radius elements, Dy, Tb, Gd, Ho, Er, Y, and Bi, is studied. Heat treatment of these glasses results in formation of magnetic nanoparticles, radically changing their physical properties. Transmission electron microscopy and synchrotron radiation-based techniques: x-ray diffraction, extended x-ray absorption fine structure, x-ray absorption near-edge structure, and small-angle x-ray scattering, show a broad distribution of nanoparticle sizes with characteristics depending on the treatment regime; a crystalline structure of these nanoparticles is detected in heat treated samples. Magnetic circular dichroism (MCD) studies of samples subjected to heat treatment as well as of maghemite, magnetite, and iron garnet allow to unambiguously assign the nanoparticle structure to maghemite, independently of co-dopant nature and of heat treatment regime used. Different features observed in the MCD spectra are related to different electron transitions in Fe{sup 3+} ions gathered in the nanoparticles. The static magnetization in heat treated samples has non-linear dependence on the magnetizing field with hysteresis. Zero-field cooled magnetization curves show that at higher temperatures the nanoparticles occur in superparamagnetic state with blocking temperatures above 100 K. Below ca. 20 K, a considerable contribution to both zero field-cooled and field-cooled magnetizations occurs from diluted paramagnetic ions. Variable-temperature electron magnetic resonance (EMR) studies unambiguously show that in as-prepared glasses paramagnetic ions are in diluted state and confirm the formation of magnetic nanoparticles already at earlier stages of heat treatment. Computer simulations of the EMR spectra corroborate the broad distribution of nanoparticle sizes found by 'direct' techniques as well as superparamagnetic nanoparticle behaviour demonstrated in the magnetization

  14. Comparative study of pure and Co-doped BaFe2As2

    NASA Astrophysics Data System (ADS)

    Soullard, Jacques; Perez-Enriquez, Raul; Kaplan, Ilya G.

    2015-05-01

    We present a comparative calculation of the electronic structure of the high critical temperature superconductor Co-doped BaFe2As2 and its parent compound at the electron correlation level by the embedded cluster method; the electron correlation is calculated through the second-order Møller-Plesset perturbation theory. The superconducting doped material is represented by the Ba4CoFe4As8 cluster. The analysis of the orbital populations in this cluster reveals the formation of an antiferromagnetic order in the Fe plane with a spin-density increase on the central Co atom with respect to the spin density of the central Fe atom of the undoped case. This increase is associated with an increase of the dz2 orbital population of the central atom. However, the formation mechanism of the local magnetic moment implies also a spin transfer from the nearest-neighbor Fe atoms and from the next-nearest-neighbor As atoms to the central Co atom, and it corresponds to a J1-J2 antiferromagnetic Heisenberg model. Some particular features of dy z and dx2-y2 orbitals in the triplet and in the singlet cluster states are interpreted to correspond to a spinless fermion. This result, as well as the result relative to the formation mechanism of the magnetic moments, can be connected with a model of resonating-valence-bond (RVB) superconductors suggested recently by Poilblanc et al. [Phys. Rev. B 89, 241106 (2014), 10.1103/PhysRevB.89.241106] and based on the Anderson RVB theory.

  15. Upconversion luminescence and blackbody radiation in tetragonal YSZ co-doped with Tm(3+) and Yb(3+).

    PubMed

    Soares, M R N; Ferro, M; Costa, F M; Monteiro, T

    2015-12-21

    Lanthanide doped inorganic nanoparticles with upconversion luminescence are of utmost importance for biomedical applications, solid state lighting and photovoltaics. In this work we studied the downshifted luminescence, upconversion luminescence (UCL) and blackbody radiation of tetragonal yttrium stabilized zirconia co-doped with Tm(3+) and Yb(3+) single crystals and nanoparticles produced by laser floating zone and laser ablation in liquids, respectively. The photoluminescence (PL) and PL excitation (PLE) were investigated at room temperature (RT). PL spectra exhibit the characteristic lines in UV, blue/green, red and NIR regions of the Tm(3+) (4f(12)) under resonant excitation into the high energy (2S+1)LJ multiplets. Under NIR excitation (980 nm), the samples placed in air display an intense NIR at ∼800 nm due to the (1)G4→(3)H5/(3)H4→(3)H6 transitions. Additionally, red, blue/green and ultraviolet UCL is observed arising from higher excited (1)G4 and (1)D2 multiplets. The power excitation dependence of the UCL intensity indicated that 2-3 low energy absorbed photons are involved in the UCL for low power levels, while for high powers, the identified saturation is dependent on the material size with a enhanced effect on the NPs. The temperature dependence of the UCL was investigated for single crystals and targets used in the ablation. An overall increase of the integrated intensity was found to occur between 12 K and the RT. The thermally activated process is described by activation energies of 10 meV and 30 meV for single crystals and targets, respectively. For the NPs, the UCL was found to be strongly sensitive to pressure conditions. Under vacuum conditions, instead of the narrow lines of the Tm(3+), a wide blackbody radiation was detected, responsible for the change in the emission colour from blue to orange. This phenomenon is totally reversible when the NPs are placed at ambient pressure. The UCL/blackbody radiation in the nanosized material exhibits

  16. Upconversion luminescence and blackbody radiation in tetragonal YSZ co-doped with Tm3+ and Yb3+

    NASA Astrophysics Data System (ADS)

    Soares, M. R. N.; Ferro, M.; Costa, F. M.; Monteiro, T.

    2015-11-01

    Lanthanide doped inorganic nanoparticles with upconversion luminescence are of utmost importance for biomedical applications, solid state lighting and photovoltaics. In this work we studied the downshifted luminescence, upconversion luminescence (UCL) and blackbody radiation of tetragonal yttrium stabilized zirconia co-doped with Tm3+ and Yb3+ single crystals and nanoparticles produced by laser floating zone and laser ablation in liquids, respectively. The photoluminescence (PL) and PL excitation (PLE) were investigated at room temperature (RT). PL spectra exhibit the characteristic lines in UV, blue/green, red and NIR regions of the Tm3+ (4f12) under resonant excitation into the high energy 2S+1LJ multiplets. Under NIR excitation (980 nm), the samples placed in air display an intense NIR at ~800 nm due to the 1G4 --> 3H5/3H4 --> 3H6 transitions. Additionally, red, blue/green and ultraviolet UCL is observed arising from higher excited 1G4 and 1D2 multiplets. The power excitation dependence of the UCL intensity indicated that 2-3 low energy absorbed photons are involved in the UCL for low power levels, while for high powers, the identified saturation is dependent on the material size with a enhanced effect on the NPs. The temperature dependence of the UCL was investigated for single crystals and targets used in the ablation. An overall increase of the integrated intensity was found to occur between 12 K and the RT. The thermally activated process is described by activation energies of 10 meV and 30 meV for single crystals and targets, respectively. For the NPs, the UCL was found to be strongly sensitive to pressure conditions. Under vacuum conditions, instead of the narrow lines of the Tm3+, a wide blackbody radiation was detected, responsible for the change in the emission colour from blue to orange. This phenomenon is totally reversible when the NPs are placed at ambient pressure. The UCL/blackbody radiation in the nanosized material exhibits non-contact pressure

  17. Synthesis and properties of ZnTe and Eu{sup 3+} ion co-doped glass nanocomposites

    SciTech Connect

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-10-28

    In this study, ZnTe (II-VI) semiconductor and Eu{sup +3}-ion co-doped borosilicate glass has been prepared in the SiO{sub 2}-K{sub 2}O-CaO-BaO-B{sub 2}O{sub 3} glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10{sup −6}/K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λ{sub cut-off}) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the {sup 5}D{sub 0} → {sup 7}F{sub 2} transition. An intense 394 nm excitation band corresponding to the {sup 7}F{sub 0} → {sup 5}L{sub 6} transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu{sup 3+} ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. {sup 5}D{sub 1} → {sup 7}F{sub 0} transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu{sup 3+} ions in the low phonon energy ZnTe crystal sites. The

  18. Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Park, Seoung-Hwan; Shim, Jong-In

    2012-06-01

    Polarization-field effects on the vertical transport in GaN/AlGaN resonant tunneling diodes (RTDs) were theoretically investigated by using the transfer matrix formalism. The self-consistent model shows that the resonant peaks are shifted toward higher energies with increasing Al composition in the AlGaN barrier, and the transmission probability values are shown to decrease rapidly. In the case of the flat-band model, on the other hand, the shift of the resonant peaks is smaller than it is for the self-consistent model and the variation of transmission probability values with increasing Al composition is relatively smaller than that of the self-consistent model. The current-voltage characteristics of the self-consistent model are asymmetric while those of the flat-band model are symmetric for positive and negative current directions. The peak-to-valley ratio (PVR) of the self-consistent model is shown to be slightly smaller than that of the flat-band model for Al = 0.3.

  19. Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

    SciTech Connect

    MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-03-10

    A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

  20. Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Chongbiao, Luan; Zhaojun, Lin; Yuanjie, Lü; Zhihong, Feng; Jingtao, Zhao; Yang, Zhou; Ming, Yang

    2014-09-01

    Using the measured capacitance-voltage curves of Ni/Au Schottky contacts with different areas and the current-voltage characteristics for the AlGaAs/GaAs, AlGaN/AlN/GaN and In0.18 Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, the two-dimensional electron gas (2DEG) electron mobility for the prepared HFETs was calculated and analyzed. It was found that there is an obvious difference for the variation trend of the mobility curves between the III-V nitride HFETs and the AlGaAs/GaAs HFETs. In the III-V nitride HFETs, the variation trend for the curves of the 2DEG electron mobility with the gate bias is closely related to the ratio of the gate length to the drain-to-source distance. While the ratio of the gate length to the drain-to-source distance has no effect on the variation trend for the curves of the 2DEG electron mobility with the gate bias in the AlGaAs/GaAs HFETs. The reason is attributed to the polarization Coulomb field scattering in the III-V nitride HFETs.

  1. Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells

    NASA Astrophysics Data System (ADS)

    Schindler, C.; Vogl, P.

    2009-11-01

    We perform spin resolved non-equilibrium Green's function calculations in nanostructured, strained two-dimensional GaAs electron and hole gases. Inelastic scattering is taken into account. We show theoretically that the intrinsic inverse spin-Hall effect provides a simple, sensitive, and purely electrical scheme to measure the spin polarization in nanostructures. We predict large spin polarizations and spin-Hall voltages for several concrete device geometries. We propose tensile strained p-GaAs as being optimally suited for detecting the inverse spin Hall effect and show that the effect is absent in n-GaAs.

  2. Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration

    SciTech Connect

    Park, Seoung-Hwan

    2014-02-14

    Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

  3. Spin filter effect at room temperature in GaN/GaMnN ferromagnetic resonant tunnelling diode

    NASA Astrophysics Data System (ADS)

    Wójcik, P.; Adamowski, J.; Wołoszyn, M.; Spisak, B. J.

    2013-06-01

    We have investigated the spin current polarization without the external magnetic field in the resonant tunneling diode with the emitter and quantum well layers made from the ferromagnetic GaMnN. For this purpose, we have applied the self-consistent Wigner-Poisson method and studied the spin-polarizing effect for the parallel and antiparallel alignments of the magnetization of the ferromagnetic layers. The results of our calculations show that the antiparallel magnetization is much more advantageous for the spin filter operation and leads to the full spin current polarization at low temperatures and 35% spin polarization of the current at room temperature.

  4. Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations

    SciTech Connect

    Gerlovin, I. Ya.; Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu.; Flisinski, K.; Bayer, M.; Reuter, D.; Wieck, A. D.; Yakovlev, D. R.

    2013-12-04

    The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

  5. Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors

    SciTech Connect

    Abderrahmane, A.; Takahashi, H.; Tashiro, T.; Ko, P. J.; Okada, H.; Sandhu, A.; Sato, S.; Ohshima, T.

    2014-02-20

    The effect of annealing at 673 K on irradiated micro-Hall sensors irradiated with protons at 380keV and fluences of 10{sup 14}, 10{sup 15} and 10{sup 16} protons/cm{sup 2} is reported. Cathodoluminescence measurements were carried out at room temperature before and after annealing and showed improvement in the band edge band emission of the GaN layer. After annealing a sensor irradiated by 10{sup 15} protons/cm{sup 2} the device became operational with improvements in its magnetic sensitivity. All irradiated sensors showed improvement in their electrical characteristics after annealing.

  6. The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures

    SciTech Connect

    Kovalyuk, Z. D. Litovchenko, P. G.; Politanska, O. A.; Sydor, O. N.; Katerynchuk, V. N.; Lastovetsky, V. F.; Litovchenko, O. P.; Dubovoy, V. K.; Polivtsev, L. A.

    2007-05-15

    The effect of 1-MeV neutrons on the photoelectric parameters of ITO-GaSe heterostructures was studied. It is shown that the observed variations in the current-voltage characteristics are caused by the effect of penetrating radiation on both components of the structure, which brings about an increase in the resistance of the heterostructures. The presence of exciton fine structure in the photosensitivity spectra after irradiation indicates that GaSe retains high structural quality notwithstanding the introduced radiation defects. The results obtained are accounted for by spatial redistribution of doping impurity in GaSe and structural changes in the ITO films.

  7. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  8. High-fluence Ga-implanted silicon—The effect of annealing and cover layers

    SciTech Connect

    Fiedler, J. Heera, V.; Hübner, R.; Voelskow, M.; Germer, S.; Schmidt, B.; Skorupa, W.

    2014-07-14

    The influence of SiO{sub 2} and SiN{sub x} cover layers on the dopant distribution as well as microstructure of high fluence Ga implanted Si after thermal processing is investigated. The annealing temperature determines the layer microstructure and the cover layers influence the obtained Ga profile. Rapid thermal annealing at temperatures up to 750 °C leads to a polycrystalline layer structure containing amorphous Ga-rich precipitates. Already after a short 20 ms flash lamp annealing, a Ga-rich interface layer is observed for implantation through the cover layers. This effect can partly be suppressed by annealing temperatures of at least 900 °C. However, in this case, Ga accumulates in larger, cone-like precipitates without disturbing the surrounding Si lattice parameters. Such a Ga-rich crystalline Si phase does not exist in the equilibrium phase diagram according to which the Ga solubility in Si is less than 0.1 at. %. The Ga-rich areas are capped with SiO{sub x} grown during annealing which only can be avoided by the usage of SiN{sub x} cover layers.

  9. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

    PubMed

    Winter, Roy; Shekhter, Pini; Tang, Kechao; Floreano, Luca; Verdini, Alberto; McIntyre, Paul C; Eizenberg, Moshe

    2016-07-01

    One of the main challenges in the path to incorporating InGaAs based metal-oxide-semiconductor structures in nanoelectronics is the passivation of high-k/InGaAs interfaces. Here, the oxygen scavenging effect of thin Ti layers on high-k/InGaAs gate stacks was studied. Electrical measurements and synchrotron X-ray photoelectron spectroscopy measurements, with in situ metal deposition, were used. Oxygen removal from the InGaAs native oxide surface layer remotely through interposed Al2O3 and HfO2 layers observed. Synchrotron X-ray photoelectron spectroscopy has revealed a decrease in the intensity of InOx features relative to In in InGaAs after Ti deposition. The signal ratio decreases further after annealing. In addition, Ti 2p spectra clearly show oxidation of the thin Ti layer in the ultrahigh vacuum XPS environment. Using capacitance-voltage and conductance-voltage measurements, Pt/Ti/Al2O3/InGaAs and Pt/Al2O3/InGaAs capacitors were characterized both before and after annealing. It was found that the remote oxygen scavenging from the oxide/semiconductor interface using a thin Ti layer can influence the density of interface traps in the high-k/InGaAs interface. PMID:27282201

  10. The microstructure of erbium-ytterbium co-doped oxyfluoride glass-ceramic optical fibers

    NASA Astrophysics Data System (ADS)

    Augustyn, Elżbieta; Żelechower, Michał; Stróż, Danuta; Chrapoński, Jacek

    2012-04-01

    Oxyfluoride transparent glass-ceramics combine some features of glasses (easier shaping or lower than single crystals cost of fabrication) and some advantages of rare-earth doped single crystals (narrow absorption/emission lines and longer lifetimes of luminescent levels). Since the material seems to be promising candidate for efficient fiber amplifiers, the manufacturing as well as structural and optical examination of the oxyfluoride glass-ceramic fibers doped with rare-earth ions seems to be a serious challenge. In the first stage oxyfluoride glasses of the following compositions 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-11PbF2-3ErF3 and 48SiO2-11Al2O3-7Na2CO3-10CaO-10PbO-10PbF2-3YbF3-1ErF3 (in molar%) were fabricated from high purity commercial chemicals (Sigma-Aldrich). The fabricated glass preforms were drawn into glass fibers using the mini-tower. Finally, the transparent Er3+ doped and Er3+/Yb3+ co-doped oxyfluoride glass-ceramic fibers were obtained by controlled heat treatment of glass fibers. The preceding differential thermal analysis (DTA) studies allowed estimating both the fiber drawing temperature and the controlled crystallization temperature of glass fibers. X-ray diffraction examination (XRD) at each stage of the glass-ceramic fibers fabrication confirmed the undesirable crystallization of preforms and glass fibers has been avoided. The fibers shown their mixed amorphous-crystalline microstructure with nano-crystals of size even below 10 nm distributed in the glassy host. The crystal structure of the grown nano-crystals has been determined by XRD and confirmed by electron diffraction (SAED). Results obtained by both techniques seem to be compatible: Er3FO10Si3 (monoclinic; ICSD 92512), Pb5Al3F19 (triclinic; ICSD 91325) and Er4F2O11Si3 (triclinic; ICSD 51510) against to initially expected PbF2 crystals.

  11. Investigation of the stability of Co-doped apatite ionic conductors in NH{sub 3}

    SciTech Connect

    Headspith, D.A.; Orera, A.; Young, N.A.; Francesconi, M.G.

    2010-12-15

    Hydrogen powered solid oxide fuel cells (SOFCs) are of enormous interest as devices for the efficient and clean production of electrical energy. However, a number of problems linked to hydrogen production, storage and transportation are slowing down the larger scale use of SOFCs. Identifying alternative fuel sources to act as intermediate during the transition to the full use of hydrogen is, therefore, of importance. One excellent alternative is ammonia, which is produced on a large scale, is relatively cheap and has the infrastructure for storage and transportation already in place. However, considering that SOFCs operate at temperatures higher than 500 {sup o}C, a potential problem is the interaction of gaseous ammonia with the materials in the cathode, anode and solid electrolyte. In this paper, we extend earlier work on high temperature reactions of apatite electrolytes with NH{sub 3} to the transition metal (Co) doped systems, La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5}. A combination of PXRD, TGA and XAFS spectroscopy data showed a better structural stability for the silicate systems. Apatite silicates and germanates not containing transition metals tend to substitute nitride anions for their interstitial oxide anions, when reacted with NH{sub 3} at high temperature and, consequentially, lower the interstitial oxide content. In La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} reduction of Co occurs as a competing process, favouring lower levels of nitride-oxide substitution. -- Graphical Abstract: In reactions between the apatites La{sub 9.67}Si{sub 5}CoO{sub 26} and La{sub 10}(Si/Ge){sub 5}CoO{sub 26.5} and NH{sub 3} (g) at temperatures T>500 {sup o}C, the partial substitution of the Si and Ge by Co seems to discourage O{sup 2-}/N{sup 3-} substitution in favour of the reduction of the metal. Display Omitted

  12. Quantum-chemical study of nitrogen and magnesium co-doping in α-Cr2O3

    NASA Astrophysics Data System (ADS)

    Jácome, Soraya; Stashans, Arvids

    2016-05-01

    Study of corundum-type chromium oxide (α-Cr2O3) crystal doped with the nitrogen and magnesium impurities has been carried out through the use of first-principles calculations based on the density functional theory (DFT) and generalized gradient approximation (GGA). Three cases corresponding different impurity-impurity distances have been considered. Structural, electronic and magnetic properties have been studied for all co-doping cases. The p-type electrical conductivity was found when distance between the Mg and N atoms is equal to 4.10 Å. The results obtained are consistent with the available experimental data.

  13. Doping concentration dependence of microstructure and magnetic behaviours in Co-doped TiO2 nanorods

    PubMed Central

    2014-01-01

    Co-doped titanium dioxide (TiO2) nanorods with different doping concentrations were fabricated by a molten salt method. It is found that the morphology of TiO2 changes from nanorods to nanoparticles with increasing doping concentration. The mechanism for the structure and phase evolution is investigated in detail. Undoped TiO2 nanorods show strong ferromagnetism at room temperature, whereas incorporating of Co deteriorates the ferromagnetic ordering. X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) results demonstrate that the ferromagnetism is associated with Ti vacancy. PMID:25593558

  14. Frequency upconversion in Er3+ and Yb3+ co-doped MgTiO3 phosphor

    NASA Astrophysics Data System (ADS)

    Mahata, Manoj Kumar; Sinha, Shriya; Kumar, Kaushal

    2016-05-01

    In the present work we have synthesized Er3+/Yb3+ co-doped MgTiO3 phosphor via co-precipitation route. The X-ray spectrum shows orthorhombic phase of the synthesized material. Fourier transform infrared spectrum does not reveal the presence of any significant amount of impurity. As for optical characterization frequency upconversion luminescence has been studied upon 980 nm cw diode laser excitation and the intense emission bands are found at 526 and 658 nm. This result indicates that this material could be employed as a potential candidate for infrared to visible upconverter.

  15. Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding

    NASA Astrophysics Data System (ADS)

    Chai, Li; Liang, Jianbo; Shigekawa, Naoteru

    2016-06-01

    The electrical properties of GaAs/GaAs junctions fabricated by surface-activated bonding (SAB) and annealing were examined on the basis of the charge neutral level model. The potential barrier height, the density of interface states, and the charge neutral level at GaAs/GaAs interfaces were estimated from the measured dependences of the electrical conductance of n-GaAs/n-GaAs and p-GaAs/p-GaAs junctions on ambient temperature. The barrier height and the density of interface states were lowered by increasing the annealing temperature to 400 °C, which suggested that the damage introduced during the SAB process was partly reduced.

  16. Synthesis and Photoluminescence Characteristics of CaIn2O4:Dy3+ Phosphors Co-Doped with Gd3+, Zn2+ or AI3+ Ions.

    PubMed

    Gou, Jing; Wang, Jing; Yu, Binxun; Zhang, Dongyang

    2016-04-01

    Novel warm-white emitting phosphors CaIn2O4:Dy3+ co-doped with Gd3+, Zn2+, or Al3+ ions were prepared by solid state reaction. In this paper, a strategy of co-doping with different ions was used with the aim of affecting the luminescence properties of CaIn204:0.6%Dy3+ under NUV excitation. The luminescence intensities of CaIn2O4:0.6%Dy3+ were enhanced by 0.2% Gd3+ or 0.2% Zn2+ ions co-doping under 367 nm excitation, but lowered by co-doping with 0.2% Al3+ ions. Furthermore, the chromaticity coordinates of CaIn2O4:0.6%Dy3+ can be tuned from the cold-white region to warm-white region with Gd3+ or Zn2+ ions co-doping. These findings show that CaIn2O4:0.6%Dy3+,0.2% Gd3+, and CaIn2O4:0.6%Dy3+,0.2% Zn2+ have potential application value as new warm-white LED phosphors. PMID:27451749

  17. First-principles analysis of the intermediate band in CuGa1 -xFexS2

    NASA Astrophysics Data System (ADS)

    Koskelo, J.; Hashemi, J.; Huotari, S.; Hakala, M.

    2016-04-01

    We present a comprehensive study of the electronic, magnetic, and optical properties of CuGa1 -xFexS2 , as a promising candidate for intermediate-band (IB) solar cells. We use hybrid exchange-correlation functional within the density functional theory framework, and show that Fe doping induces unoccupied states 1.6-1.9 eV above the valence band. The IBs significantly enhance the optical absorption in lower energy part of the spectrum. We find that at moderate n -type co-doping concentration, the added charge occupies part of the IB in the gap, but large concentrations lower the energy of the occupied IB toward the valence band. Moreover, we show that Fe impurities tend to cluster within the compound and they choose antiferromagnetic ordering. The findings can have a significant effect in understanding this material and help to synthesize more efficient IB solar cells.

  18. Eu2+ and Mn2+ Co-doped BaMgAl10O17 Blue- and Green-Emitting Phosphor: A Luminescence and EPR Study

    NASA Astrophysics Data System (ADS)

    Singh, Vijay; Sivaramaiah, G.; Rao, J. L.; Singh, N.; Srivastava, Anoop K.; Jirimali, H. D.; Li, J.; Gao, H.; Kumaran, R. Senthil; Singh, Pramod K.; Dhoble, S. J.

    2016-06-01

    Eu2+ and Mn2+ co-doped BaMgAl10O17 phosphor has been prepared by a solution combustion method. The structural, morphological and compositional analysis of the BaMgAl10O17:Eu2+ and Mn2+ powders have been studied by x-ray diffraction, scanning electron microscopy and energy dispersive x-ray spectroscopy. The electron paramagnetic resonance (EPR) spectrum exhibited resonance signals with the effective g values of g ≈ 4.88 and g ≈ 1.98. The resonance signal with the effective g value of g ≈ 4.88 is characteristic of Eu2+ ions whereas g ≈ 1.98 is due to Mn2+ ions. The number of spins participating in resonance, Gibbs free energy, magnetic susceptibility, Curie constant, effective magnetic moment, zero-field splitting parameter and hyperfine splitting constant have been evaluated. From optical and EPR correlation, it is inferred that Eu2+ and Mn2+ are present in the BaMgAl10O17 matrix.

  19. Spectroscopic characterization and energy transfer process in cobalt and cobalt-iron co-doped ZnSe/ZnS crystals

    NASA Astrophysics Data System (ADS)

    Peppers, J.; Martyshkin, D. V.; Fedorov, V. V.; Mirov, S. B.

    2014-02-01

    Cobalt doped II-VI wide band semiconductors (e.g. ZnSe, ZnS, CdSe) are promising media for infrared (IR) laser applications. They could be utilized as effective passive Q-switches for cavities of Alexandrite as well as Nd and Er lasers operating over 0.7-0.8, 1.3-1.6, and ~2.8 μm spectral ranges. We report spectroscopic characterization of Co:ZnSe and Co:ZnS crystals. Absorption cross-sections were measured for 4A2(F) → 4T1(P), 4A2(F) → 4T1(F), and 4A2(F) → 4T2(F) transitions with maximum absorption at 768(726), 1615(1500), 2690(2740) nm for ZnSe(ZnS) crystals, respectively. The calculated absorption cross-sections of the above transitions were estimated to be 64(56)×1019, 7.5(7.8)×1019, and 0.52(0.49)×1019 cm2 for ZnSe(ZnS) crystal hosts. In addition to the above applications the cobalt ions could be utilized for excitation of Fe2+ ions via resonance energy transfer process. Tunable room temperature lasing of Fe 2+ doped binary and ternary chalcogenides has been successfully demonstrated over 3.5-6 μm spectral range. However, II-VI lasers based on Fe2+ active ions don't feature convenient commercially available pump sources (e.g. some Fe doped crystal hosts require pump wavelengths longer than 3 μm). Therefore, the process of energy transfer from Co2+ to Fe2+ ions could enable utilization of commercially available visible and near-infrared pump sources. We report a spectroscopic characterization of iron-cobalt co-doped ZnS and ZnSe crystals over 14-300K temperature range. Mid-IR laser oscillation at 3.9 μm(3.6 μm) via energy transfer in the Co:Fe:ZnSe (Co:Fe:ZnS) co-doped crystals was demonstrated under cobalt excitation at 4A2(F) → 4T1(P) (~0.7μm) and 4A2(F) → 4T1(F) (~1.56 μm) transitions.

  20. Long-term radiation effects on GaAs solar cell characteristics

    NASA Technical Reports Server (NTRS)

    Heinbockel, J. H.; Doviak, M. J.

    1978-01-01

    This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

  1. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect

    Nicholson, Don M; Odbadrakh, Khorgolkhuu; Rios, Orlando; Hodges, Jason P; Ludtka, Gerard Michael; Porter, Wallace D; Sefat, A. S.; Rusanu, Aurelian; Evans III, Boyd Mccutchen

    2012-01-01

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.

  2. Effects of Hydrogen Implantation into GaN

    SciTech Connect

    Abernathy, C.R.; Han, J.; Pearton, S.J.; Shul, R.J.; Song, C.Y.; Stavola, M.; Weinstein, M.G.; Wilson, R.G.; Zavada, J.M.

    1998-12-24

    Proton implantation in GaN is found to reduce the free carrier density through two mechanisms - first, by creating electron and hole traps at around Ec-0.8eV and Ev+0.9eV that lead to compensation in both n- and p-type material, and second, by leading to formation of (AH)O complexes, where A is any acceptor (Mg, Ca, Zn, Be, Cd). The former mechanism is usefid in creating high resistivity regions for device isolation, whereas the latter produces unintentional acceptor passivation that is detrimental to device performance. The strong affinity of hydrogen for acceptors leads to markedly different redistribution behavior for implanted in n- and p-GaN due to the chemical reaction to form neutral complexes in the latter. The acceptors may be reactivated by simple annealing at 2600{degrees}C, or by electron injection at 25-150{degrees}C that produces debonding of the (AH) centers. Implanted hydrogen is also strongly attracted to regions of strain in heterostructure samples during annealing, leading to pile-up at epi-epi and epi-substrate interfaces. II? spectroscopy shows that implanted hydrogen also decorates VG, defects in undoped and n-GaN.

  3. Effect of GA3 Treatment on Seed Development and Seed-Related Gene Expression in Grape

    PubMed Central

    Cheng, Chenxia; Xu, Xiaozhao; Singer, Stacy D.; Li, Jun; Zhang, Hongjing; Gao, Min; Wang, Li; Song, Junyang; Wang, Xiping

    2013-01-01

    Background The phytohormone gibberellic acid (GA3) is widely used in the table grape industry to induce seedlessness in seeded varieties. However, there is a paucity of information concerning the mechanisms by which GAs induce seedlessness in grapes. Methodology/Principal Findings In an effort to systematically analyze the cause of this GA3-induced seed abortion, we conducted an in depth characterization of two seeded grape cultivars (‘Kyoho’ and ‘Red Globe’), along with a seedless cultivar (‘Thompson Seedless’), following treatment with GA3. In a similar fashion to the seedless control, which exhibited GA3-induced abortion of the seeds 9 days after full bloom (DAF), both ‘Kyoho’ and ‘Red Globe’ seeded varieties exhibited complete abortion of the seeds 15 DAF when treated with GA3. Morphological analyses indicated that while fertilization appeared to occur normally following GA3 treatment, as well as in the untreated seedless control cultivar, seed growth eventually ceased. In addition, we found that GA3 application had an effect on redox homeostasis, which could potentially cause cell damage and subsequent seed abortion. Furthermore, we carried out an analysis of antioxidant enzyme activities, as well as transcript levels from various genes believed to be involved in seed development, and found several differences between GA3-treated and untreated controls. Conclusion Therefore, it seems that the mechanisms driving GA3-induced seedlessness are similar in both seeded and seedless cultivars, and that the observed abortion of seeds may result at least in part from a GA3-induced increase in cell damage caused by reactive oxygen species, a decrease in antioxidant enzymatic activities, and an alteration of the expression of genes related to seed development. PMID:24224035

  4. Quasi-intrinsic colossal permittivity in Nb and In co-doped rutile TiO2 nanoceramics synthesized through a oxalate chemical-solution route combined with spark plasma sintering.

    PubMed

    Han, HyukSu; Dufour, Pascal; Mhin, Sungwook; Ryu, Jeong Ho; Tenailleau, Christophe; Guillemet-Fritsch, Sophie

    2015-07-14

    Nb and In co-doped rutile TiO2 nanoceramics (n-NITO) were successfully synthesized through a chemical-solution route combined with a low temperature spark plasma sintering (SPS) technique. The particle morphology and the microstructure of n-NITO compounds were nanometric in size. Various techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG)/differential thermal analysis (DTA), Fourier transform infrared (FTIR), and Raman spectroscopy were used for the structural and compositional characterization of the synthesized compound. The results indicated that the as-synthesized n-NITO oxalate as well as sintered ceramic have a co-doped single phase of titanyl oxalate and rutile TiO2, respectively. Broadband impedance spectroscopy revealed that novel colossal permittivity (CP) was achieved in n-NITO ceramics exhibiting excellent temperature-frequency stable CP (up to 10(4)) as well as low dielectric loss (∼5%). Most importantly, detailed impedance data analyses of n-NITO compared to microcrystalline NITO (μ-NITO) demonstrated that the origin of CP in NITO bulk nanoceramics might be related with the pinned electrons in defect clusters and not to extrinsic interfacial effects. PMID:26058428

  5. Bamboo leaf-assisted formation of carbon/nitrogen co-doped anatase TiO2 modified with silver and graphitic carbon nitride: novel and green synthesis and cooperative photocatalytic activity.

    PubMed

    Jiang, Zhifeng; Liu, Dong; Jiang, Deli; Wei, Wei; Qian, Kun; Chen, Min; Xie, Jimin

    2014-09-28

    We report a novel synthesis approach employing bamboo leaves as sources of both the C/N dopant and reductant to the formation of C/N co-doped TiO2 modified with Ag and g-C3N4 (Ag/CN-TiO2@g-C3N4). In this case, the ternary composite has a hierarchical structure and a large surface area, which increases the contact area of reactants. Degradation of rhodamine B (RhB) and hydrogen generation were carried out to evaluate the photocatalytic activity of as-prepared samples under visible light irradiation. It is found that with respect to single and binary catalysts, the Ag/CN-TiO2@g-C3N4 ternary composite shows the highest photocatalytic activity (degradation of RhB, H2 evolution from water splitting) as a result of the fast generation, separation and transportation of the photogenerated carriers, which was evidenced by photoluminescence measurements and free radical/hole scavenging experiments. At last, a possible photocatalytic mechanism under visible light irradiation was proposed. The novel and green synergistic approach presented here could provide a facile yet effective method for designing other visible light active non-metal co-doped TiO2 based photocatalysts with enhanced activity and high chemical stability. PMID:25102976

  6. Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

    NASA Astrophysics Data System (ADS)

    Wu, F.; Gao, K. H.; Li, Z. Q.; Lin, T.; Zhou, W. Z.

    2015-04-01

    We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω / ◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ q owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.

  7. Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

    SciTech Connect

    Wu, F.; Gao, K. H. Li, Z. Q.; Lin, T.; Zhou, W. Z.

    2015-04-21

    We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q} owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.

  8. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells

    NASA Astrophysics Data System (ADS)

    Wu, Yuanyuan; Ji, Lian; Dai, Pai; Tan, Ming; Lu, Shulong; Yang, Hui

    2016-02-01

    Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively.

  9. Bowing effect in elastic constants of dilute Ga(As,N) alloys

    NASA Astrophysics Data System (ADS)

    Berggren, Jonas; Hanke, Michael; Trampert, Achim

    2016-05-01

    We study the elastic properties of dilute Ga(As,N) thin films grown on GaAs(001) by means of nano-indentation and complementary dynamic finite element calculations. The experimental results of indentation modulus are compared with simulations in order to extract the cubic elastic constants cij as a function of nitrogen content of the Ga(As,N) alloys. Both, indentation modulus and elastic constants decrease with increasing nitrogen content, which proves a strong negative bowing effect in this system in contrast to Vegard's law.

  10. Some effects of oxygen impurities on AlN and GaN

    NASA Astrophysics Data System (ADS)

    Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald; Freitas, Jaime A.

    2002-12-01

    Oxygen is a common substitutional impurity in both AlN and GaN crystals. In the wurtzite 2H phase it can be present in AlN up to concentrations of 1×10 21/cm 3 while in GaN it can reach concentrations of 3×10 22/cm 3. These high concentrations of oxygen affect the luminescence, the optical absorption, the thermal conductivity, and the crystal perfection. The effects are somewhat similar in AlN and GaN. Representative experimental data will be presented to demonstrate the similarities, and to show how the oxygen content may be estimated from these property measurements.

  11. A photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus

    NASA Astrophysics Data System (ADS)

    Ahmad, Ijaz; Marinova, Vera; Vrielinck, Henk; Callens, Freddy; Goovaerts, Etienne

    2011-04-01

    A trigonal Cr3+ (3d3) defect in sillenite type Bi12SiO20 crystals co-doped with chromium and phosphorus has been identified by means of multi-frequency X-band (9.4 GHz), Q-band (35 GHz) and W-band (94 GHz) electron paramagnetic resonance (EPR). A consistent analysis of the observed spectra and their angular dependence was reached using an S = 3/2 spin Hamiltonian with axial symmetry around a <111> crystallographic direction, an isotropic g-value g = 1.983, and a zero field splitting parameter B20 = 0.1950 cm-1. The spectra are attributed to a chromium ion in the unusual Cr3+ valence replacing a substitutional Si4+ in tetrahedral oxygen coordination. Evidence is found that the symmetry lowering from tetrahedral to trigonal is not spontaneous but induced by an associated defect, for which a P5+ ion in a nearest-neighbor Si4+ site is the most plausible candidate. Optical excitation results in a reversible charge transfer process directly correlated with a photochromic effect: near-UV light leads to a strong reduction of the Cr3+ EPR signals, and induces a broad band at 675 nm in the absorption spectrum, and both effects are reversed under red light excitation.

  12. Enhanced visible-light absorption of mesoporous TiO2 by co-doping with transition-metal/nitrogen ions

    SciTech Connect

    Mathis, John; Bi, Zhonghe; Bridges, Craig A; Kidder, Michelle; Paranthaman, Mariappan Parans

    2013-01-01

    Titanium (IV) oxide, TiO2, has been the object of intense scrutiny for energy applications. TiO2 is inexpensive, non-toxic, and has excellent corrosion resistance when exposed to electrolytes. A major drawback preventing the widespread use TiO2 for photolysis is its relatively large band gap of ~3eV. Only light with wavelengths shorter than 400 nm, which is in the ultraviolet portion of the spectrum, has sufficient energy to be absorbed. Less than 14 percent of the solar irradiation reaching the earth s surface has energy exceeding this band gap. Adding dopants such as transition metals has long been used to reduce the gap and increase photocatalytic activity by accessing the visible part of the solar spectrum. The degree to which the band gap is reduced using transition metals depends in part on the overlap of the d-orbitals of the transition metals with the oxygen p-orbitals. Therefore, doping with anions such as nitrogen to modify the cation-anion orbital overlap is another approach to reduce the gap. Recent studies suggest that using a combination of transition metals and nitrogen as dopants is more effective at introducing intermediate states within the band gap, effectively narrowing it. Here we report the synthesis of mesoporous TiO2 spheres, co-doped with transition metals and nitrogen that exhibit a nearly flat absorbance response across the visible spectrum extending into the near infrared.

  13. Synthesis, characterization, and photocatalytic activity of porous La-N-co-doped TiO2 nanotubes for gaseous chlorobenzene oxidation.

    PubMed

    Cheng, Zhuowei; Gu, Zhiqi; Chen, Jianmeng; Yu, Jianming; Zhou, Lingjun

    2016-08-01

    The photocatalytic oxidation of gaseous chlorobenzene (CB) by the 365nm-induced photocatalyst La/N-TiO2, synthesized via a sol-gel and hydrothermal method, was evaluated. Response surface methodology (RSM) was used to model and optimize the conditions for synthesis of the photocatalyst. The optimal photocatalyst was 1.2La/0.5N-TiO2 (0.5) and the effects of La/N on crystalline structure, particle morphology, surface element content, and other structural characteristics were investigated by XRD (X-ray diffraction), TEM (Transmission Electron Microscopy), FTIR (Fourier transform infrared spectroscopy), UV-vis (Ultraviolet-visible spectroscopy), and BET (Brunauer Emmett Teller). Greater surface area and smaller particle size were produced with the co-doped TiO2 nanotubes than with reference TiO2. The removal of CB was effective when performed using the synthesized photocatalyst, though it was less efficient at higher initial CB concentrations. Various modified Langmuir-Hinshelwood kinetic models involving the adsorption of chlorobenzene and water on different active sites were evaluated. Fitting results suggested that competitive adsorption caused by water molecules could not be neglected, especially for environments with high relative humidity. The reaction intermediates found after GC-MS (Gas chromatography-mass spectrometry) analysis indicated that most were soluble, low-toxicity, or both. The results demonstrated that the prepared photocatalyst had high activity for VOC (volatile organic compounds) conversion and may be used as a pretreatment prior to biopurification. PMID:27521952

  14. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

    NASA Astrophysics Data System (ADS)

    Hazbun, Ramsey; Bhargava, Nupur; Rodriguez-Toro, Victor A.; Goossen, Keith; Kolodzey, James; Ram-Mohan, L. Ramdas; Aina, Leye; Fathimulla, Ayub; Hier, Harry

    2015-03-01

    The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the significantly different lattice constants. One approach is to use InGaSbN/InAs grown on GaSb where the InGaSbN layer has a larger lattice constant than the substrate, and the InAs layer has a lower lattice constant, and thus the compressive and tensile stress of the superlattice layers can be balanced in a so called strained-layer superlattice. In this paper, we report InxGa1-xSb1-yNy/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, where the design of the layer thickness is based on the lattice constants and the elastic moduli. Three different strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb1-yNy barrier thickness. Eight-band k · p simulations of these structures were used to analyze the superlattice miniband energies. For fully strain balanced InxGa1-xSb1-yNy/InAs superlattices lattice matched to the GaSb substrate, careful consideration of strain balance conditions was needed to achieve a lower effective miniband gap needed for longer cutoff wavelength detectors. For non-strained balanced InxGa1-xSb1-yNy/InAs superlattices, long-wavelength cutoff up to 8 μm can be achieved as part of a trade-off between the deleterious effects of strain and the reduction of the barrier band gap through N incorporation.

  15. Synthesis and photocatalytic activity of co-doped mesoporous TiO 2 on Brij98/CTAB composite surfactant template

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaotong; Zhou, Guowei; Xu, Jing; Bai, Guangwei; Wang, Lei

    2010-06-01

    Using composite surfactant templates, polyoxyethylene (20) oleyl ether (Brij98) and cetyl trimethyl ammonium bromide (CTAB), as structure-directing agents, N and La co-doped mesoporous TiO 2 complex photocatalysts were synthesized successfully. The micromorphology of co-doped mesoporous TiO 2 samples was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transformed infrared spectroscopy (FT-IR), energy-dispersive X-ray spectrometer (EDS) and N 2 adsorption-desorption measurements. The results indicated that the complex photocatalyst prepared with a molar ratio of Brij98:CTAB=1:1 showed a uniform pore size of ca. 7 nm and a high specific surface area ( SBET) of 279.0 m 2 g -1, and exhibited the highest photocatalytic activity for degradation of papermaking wastewater under ultra-violet light irradiation. The chemical oxygen demand (CODc r) percent degradation was about 73% in 12 h and chroma percent degradation was 100% in 8 h.

  16. Spectroscopic properties and upconversion studies in Ho(3+) /Yb(3+) Co-doped calcium scandate with spectrally pure green emission.

    PubMed

    Li, Jing; Zhang, Jiahua; Hao, Zhendong; Zhang, Xia; Zhao, Jihong; Luo, Yongshi

    2013-12-16

    The optical properties of a Ho(3+) /Yb(3+) co-doped CaSc2 O4 oxide material are investigated in detail. The spectral properties are described as a function of doping concentrations. The efficient Yb(3+) →Ho(3+) energy transfer is observed. The transfer efficiency approaches 50 % before concentration quenching. The concentration-optimized sample exhibits a strong green emission accompanied with a weak red emission, showing perfect green monochromaticity. The results of the spectral distribution, power dependence, and lifetime measurements are presented. The green, red, and near-infrared (NIR) emissions around 545, 660, and 759 nm are assigned to the (5) F4 +(5) S2 →(5) I8 , (5) F5 →(5) I8 , and (5) F4 +(5) S2 →(5) I7 transitions of Ho(3+) , respectively. The detailed study reveals the upconversion luminescence mechanism involved in a novel Ho(3+) /Yb(3+) co-doped CaSc2 O4 oxide material. PMID:24323855

  17. N, S co-doped-TiO2/fly ash beads composite material and visible light photocatalytic activity

    NASA Astrophysics Data System (ADS)

    Lv, Jun; Sheng, Tong; Su, Lili; Xu, Guangqing; Wang, Dongmei; Zheng, Zhixiang; Wu, Yucheng

    2013-11-01

    Using TiCl4 as the titanium source, urea as the precipitating agent, nano-TiO2/fly ash beads composite materials were prepared by hydrolysis-precipitation method. Using (NH2)2CO and (NH2)2SC as the N and S source respectively, N and S co-doped TiO2/fly ash beads composite materials were prepared by grinding them together according to a certain proportion and calcined at 500 °C for 2 h. The composite materials were characterized by SEM, EDS, XPS, and UV-vis spectrophotometer methods. The UV-vis absorption spectra results show that the absorption edge of un-doped composites is 390 nm while that of doped composites red-shifts to 500 nm. The photocatalytic activity of composite materials was evaluated by degradation of methyl orange under visible light irradiation (halogen lamp, 250 W). The results showed that after irradiation for 1 h, degradation rate of N, S co-doped-TiO2/fly ash beads composite material can reach 65%, while the degradation rate of un-doped sample and P25 were just 10% and 6%, respectively. The composite material also showed excellent recycling properties.

  18. Up conversion processes in yttrium-lithium-flouride crystals co-doped with erbium and ytterbium ions

    NASA Astrophysics Data System (ADS)

    Spinger, B.; Danilov, Valery P.; Prokhorov, Alexander M.; Schwan, L. O.; Schmid, D.

    2002-07-01

    We report on studies of the up-conversion process in YLiF4 single crystals co-doped with Er3+ and with Yb3+. Er3+ has a well known complicated energy level system within the 4f shell which gives rise to the up- conversion process. Yb3+ with a broad absorption band int eh regime 940 nm co-doped with Er3+ and with Yb3+ may be considered as suitable candidates for diode-laser-pumped displays and for solid state laser system int eh visible and near UV region.

  19. Double Rare-Earth Oxides Co-doped Strontium Zirconate as a New Thermal Barrier Coating Material

    NASA Astrophysics Data System (ADS)

    Ma, Wen; Wang, Dongxing; Dong, Hongying; Lun, Wenshan; He, Weiyan; Zheng, Xuebin

    2013-03-01

    Y2O3 and Yb2O3 co-doped strontium zirconate with chemistry of Sr(Zr0.9Y0.05Yb0.05)O2.95 (SZYY) was synthesized and had a minor second phase of Yb2O3. The SZYY showed good phase stability not only from room temperature to 1400 °C but also at high temperature of 1450 °C for a long period, analyzed by thermogravimetry-differential scanning calorimetry and x-ray diffraction, respectively. The coefficients of thermal expansion (CTEs) of the sintered bulk SZYY were recorded by a high-temperature dilatometer and revealed a positive influence on phase transitions of SrZrO3 by co-doping with Y2O3 and Yb2O3. The thermal conductivities of SZYY were at least ~30% lower in contrast to that of SrZrO3 and 8YSZ in the whole tested temperature range. Good chemical compatibility was observed for SZYY with 8YSZ or Al2O3 powders after a 24 h heat treatment at 1250 °C. The phase stability and the microstructure evolution of the as-sprayed SZYY coating during annealing at 1400 °C were also investigated.

  20. Broadband near-infrared emission from Tm{sup 3+}/Er{sup 3+} co-doped nanostructured glass ceramics

    SciTech Connect

    Chen Daqin; Wang Yuansheng; Bao Feng; Yu Yunlong

    2007-06-01

    Transparent SiO{sub 2}-Al{sub 2}O{sub 3}-NaF-YF{sub 3} glass ceramics co-doped with Er{sup 3+} and Tm{sup 3+} were prepared by melt quenching and subsequent heating. X-ray diffraction and transmission electron microscopy experiments revealed that {beta}-YF{sub 3} nanocrystals incorporated with Er{sup 3+} and Tm{sup 3+} were precipitated homogeneously among the oxide glass matrix. An integrated broad near-infrared emission band in the wavelength region of 1300-1700 nm, consisting of Tm{sup 3+} emissions around 1472 nm ({sup 3}H{sub 4}{yields}{sup 3}F{sub 4}) and 1626 nm ({sup 3}F{sub 4}{yields}{sup 3}H{sub 6}), and Er{sup 3+} emission around 1543 nm ({sup 4}I{sub 13/2}{yields}{sup 4}I{sub 15/2}), was obtained under 792 nm laser excitation. The full width at half maximum of this integrated band increased with the increasing of [Tm]/[Er] ratio, and it reached as large as 175 nm for the 0.1 mol% Er{sup 3+} and 0.8 mol% Tm{sup 3+} co-doped sample. The energy transfers between Er{sup 3+} and Tm{sup 3+} were proposed to play an important role in tailoring the emission bandwidth of the sample.

  1. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    PubMed Central

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  2. Enhanced electrical transport by texture modulation and co-doping for Ca3Co4O9+δ materials

    NASA Astrophysics Data System (ADS)

    Liu, Z. Y.; Zhang, F. P.; Zhang, J. X.; Zhang, X.; Lu, Q. M.; Yang, X. Y.

    The powders as well as the texture modulated Ca2.8BaxPryCo4O9+δ (x, y = 0, 0.05, 0.1, 0.15 and 0.2) bulk materials are prepared via solid state reaction, sol-gel and spark plasma sintering method. The powder and bulk materials are analyzed with regard to their phase composition and microscopic character by X-ray diffraction (XRD) and scanning electron microscope (SEM). The thermoelectric transport properties of the bulk materials are measured and investigated. The results show that the plate-like powders with uniform particle size tend to align regularly rather than the powders with anomaly shape and particle size distribution by spark plasma sintering method. The bulk materials co-doped by elements with lower electronegativity tend to form better texture rather than that of the bulk materials co-doped by elements with higher electronegativity via spark plasma sintering method. The resistivities and Seebeck coefficients are in negative accordance to the bulk material texture as a whole, and the carrier transport mechanism is not influenced. The electrical performance is tuned with optimized power factor 462 μW m-1 K-2 at 973 K for Ca2.8BaxPryCo4O9+δ (x = y = 0.1) bulk materials.

  3. On the Luminescence Enhancement of Mn2+ By Co-doping of Eu2+ in ZnS:Mn,Eu

    SciTech Connect

    Hossu, Marius; Schaeffer, Roger O.; Ma, Lun; Chen, Wei; Zhu, Yongbin; Sammynaiken, Ramaswami; Joly, Alan G.

    2013-06-01

    The photoluminescence and X-ray luminescence of ZnS:Mn, ZnS:Mn,Eu and ZnS:Eu were investigated and it was found that the luminescence intensity of Mn2+ in ZnS:Mn,Eu co-doped phosphors is highly dependent on the doping concentration of Eu2+. At the optimized Eu2+concentration (0.2%), the photoluminescence of Mn2+ shows about a 5.5 times enhancement and its X-ray luminescence is enhanced by a factor of 2.5. Both wurtzite and zinc blend phases are present in the samples with wurtzite phase dominant. Co-doping of Eu2+ into ZnS:Mn does not change appreciably the ratio of the two phases or the Mn2+ emission luminescence lifetime; however, the doping of Eu2+ into ZnS:Mn does change the phonon activity. Furthermore, it was found that the defect-related blue emission of ZnS:Eu overlaps with the excitation bands of Mn2+ in ZnS:Mn and there is likely energy transfer from these defect states to Mn2+ in ZnS:Mn,Eu. This energy transfer and the phonon modification are considered to be the two main reasons for the luminescence enhancement and the intensity dependence of Mn2+ emission on Eu2+ doping concentration in ZnS:Mn,Eu.

  4. Colour emission tunability in Ho3+-Tm3+-Yb3+ co-doped Y2O3 upconverted phosphor

    NASA Astrophysics Data System (ADS)

    Pandey, Anurag; Rai, Vineet Kumar

    2012-12-01

    The frequency upconversion (UC) emission throughout the visible region from the Y2O3:Ho3+-Tm3+-Yb3+ co-doped phosphors synthesized by using low temperature combustion process upon excitation with a diode laser operating at 980 nm have been presented. The colour emission tunability in co-doped phosphor has been observed on increasing the pump power and seen by the naked eyes. The tunability in colour emission has also been visualized by CIE chromaticity diagram. The variation in UC emission intensity of the 1G4 → 3H6 (Tm3+) and 5F3 → 5I8 (Ho3+) transitions lying in the blue region has been monitored with increase in the pump power and marked that their ratio can be used to determine the temperature. The developed phosphor has been used to record fingerprints. The observed most intense visible colour emission from the developed material may be used for photodynamic therapy and as an alternative of traditional fluorescent biolabels.

  5. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction

    NASA Astrophysics Data System (ADS)

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-11-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21th harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies.

  6. Structural, optical and photocatalytic properties of Fe and (Co, Fe) co-doped copper oxide spin coated films.

    PubMed

    El Sayed, A M; Shaban, Mohamed

    2015-10-01

    Copper oxide films with composition Cu1-x-yFexCoyO (where x⩽0.06 and y⩽0.03 in a molar ratio) and thickness of about 2 μm were spin coated onto ultrasonically cleaned glass substrates. These films were annealed at 500 °C in the air. XRD results show that films are CuO of polycrystalline and monoclinic structures without the detection of any Fe or Co traces. The average crystallite size of pure CuO is 20.44 nm reduced to 18.72 nm after Fe doping, then increased to 26.82 nm due to the co-doping with Co atoms. The optical band gap blue-shifted from 2.15 eV to 2.3 eV followed by red-shift to 2.15 eV after the Co incorporation. The influence of Fe doping and Co co-doping on the optical constants of CuO films as well as the photocatalytic removal of methylene blue (MB) dye is reported. The correlations between the structural modifications and the resultant optical properties are discussed. The obtained results of the fabricated system are compared with those of similar materials. PMID:25985128

  7. High-power graphene mode-locked Tm/Ho co-doped fiber laser with evanescent field interaction.

    PubMed

    Li, Xiaohui; Yu, Xuechao; Sun, Zhipei; Yan, Zhiyu; Sun, Biao; Cheng, Yuanbing; Yu, Xia; Zhang, Ying; Wang, Qi Jie

    2015-01-01

    Mid-infrared ultrafast fiber lasers are valuable for various applications, including chemical and biomedical sensing, material processing and military applications. Here, we report all-fiber high-power graphene mode-locked Tm/Ho co-doped fiber laser at long wavelength with evanescent field interaction. Ultrafast pulses up to 7.8 MHz are generated at a center wavelength of 1879.4 nm, with a pulse width of 4.7 ps. A graphene absorber integrated with a side-polished fiber can increase the damage threshold significantly. Harmonics mode-locking can be obtained till to the 21(th) harmonics at a pump power of above 500 mW. By using one stage amplifier in the anomalous dispersion regime, the laser can be amplified up to 450 mW and the narrowest pulse duration of 1.4 ps can be obtained simultaneously. Our work paves the way to graphene Tm/Ho co-doped mode-locked all-fiber master oscillator power amplifiers as potentially efficient and economic laser sources for high-power laser applications, such as special material processing and nonlinear optical studies. PMID:26567536

  8. Broadband emission at NIR in double-core optical fiber co-doped with Nd3+/Yb3+ ions

    NASA Astrophysics Data System (ADS)

    Bykowski, Kamil; Bruszewski, Artur; Cimaszewski, Dominik; Ragin, Tomasz; Zmojda, Jacek; Kochanowicz, Marcin; Miluski, Piotr; Dorosz, Dominik

    2015-09-01

    In the paper spectroscopic properties of aluminosilicate glasses co-doped with Nd3+/Yb3+ were investigated. Strong and wide emission in the 1μm region obtained by optimization of Nd3+ --> Yb3+ energy transfer corresponding to the superposition of optical transitions Nd3+:4F3/2 --> 4I11/2 and Yb3+:2F5/2 --> 2F7/2 (Yb3+) was observed. The construction of double-core, double-clad optical fiber with cores manufactured from the aluminosilicate glass (co-doped with 1st core- 0.15Nd2O3, 2nd core - 0.15Nd2O3/0.45Yb2O3 mol%) was developed. Comparative analysis of shape of luminescence (λp=808 nm) obtained in bulk glass (0.15Nd2O3/0.45Yb2O3) and ASE in double-core optical fiber clearly shows significant differences in luminescent properties. Mechanisms influencing differences in the shape of luminescence of fabricated glass and optical fiber were also discussed.

  9. Growth and photorefractive properties of Mg, Fe co-doped near-stoichiometric lithium tantalate single crystals

    NASA Astrophysics Data System (ADS)

    Hsu, W. T.; Chen, Z. B.; You, C. A.; Huang, S. W.; Liu, J. P.; Lan, C. W.

    2010-07-01

    Mg, Fe co-doped near-stoichiometric lithium tantalate (SLT) crystals were successfully grown by the zone-leveling Czochralski (ZLCz) technique and the holographic properties were measured by the two-beam coupling method. The fundamental optical properties of crystals were measured by employing the UV-vis-NIR spectrometer and Fourier transformation infrared spectrophotometer as well. By the chemical analysis, the Li/Ta, Mg/Ta and Fe/Ta ratios of the crystals were obtained and the Li/Ta ratios of the crystals were all close to the theoretical limitation of 0.98. In the holographic properties, the recording time constant, erasing time constant, dynamic range, and sensitivity decreased with light intensity; but the maximum diffraction efficiency showed an opposite trend. Furthermore, the diffraction efficiency, dynamic range and sensitivity of the crystals were improved with a relatively higher Fe/Ta ratio. In comparison with Mn-LT crystals, the Mg, Fe co-doped SLT crystal showed the superior photorefractive properties indicating that it could be a promising new material for lifetime holographic data storage.

  10. Optimization of scintillation performance via a combinatorial multi-element co-doping strategy: Application to NaI:Tl

    NASA Astrophysics Data System (ADS)

    Khodyuk, I. V.; Messina, S. A.; Hayden, T. J.; Bourret, E. D.; Bizarri, G. A.

    2015-08-01

    A combinatorial approach where doped bulk scintillator materials can be rapidly optimized for their properties through concurrent extrinsic doping/co-doping strategies is presented. The concept that makes use of design of experiment, rapid growth, and evaluation techniques, and multivariable regression analysis, has been successfully applied to the engineering of NaI performance, a historical but mediocre performer in scintillation detection. Using this approach, we identified a three-element doping/co-doping strategy that significantly improves the material performance. The composition was uncovered by simultaneously screening for a beneficial co-dopant ion among the alkaline earth metal family and by optimizing its concentration and that of Tl+ and Eu2+ ions. The composition with the best performance was identified as 0.1% mol Tl+, 0.1% mol Eu2+, and 0.2% mol Ca2+. This formulation shows enhancement of energy resolution and light output at 662 keV, from 6.3 to 4.9%, and from 44 000 to 52 000 ph/MeV, respectively. The method, in addition to improving NaI performance, provides a versatile framework for rapidly unveiling complex and concealed correlations between material composition and performance, and should be broadly applicable to optimization of other material properties.

  11. Nitrogen and phosphorus co-doped graphene quantum dots: synthesis from adenosine triphosphate, optical properties, and cellular imaging

    NASA Astrophysics Data System (ADS)

    Ananthanarayanan, Arundithi; Wang, Yue; Routh, Parimal; Sk, Mahasin Alam; Than, Aung; Lin, Ming; Zhang, Jie; Chen, Jie; Sun, Handong; Chen, Peng

    2015-04-01

    Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells.Graphene quantum dots (GQDs) are emerging zero-dimensional materials promising a wide spectrum of applications, particularly, as superior fluorescent reporters for bio-imaging and optical sensing. Heteroatom doping can endow GQDs with new or improved photoluminescence properties. Here, we demonstrate a simple strategy for the synthesis of nitrogen and phosphorus co-doped GQDs from a single biomolecule precursor (adenosine triphosphate - ATP). Such ATP-GQDs exhibit high fluorescence quantum yield, strong two-photon upconversion, small molecular weight, high photostability, and good biocompatibility. Furthermore, transferrin conjugated ATP-GQDs have been used for imaging and real-time tracking of transferrin receptors in live cells. Electronic supplementary information (ESI) available: Supplementary figures related to characterization, computational studies and protein conjugation. See DOI: 10.1039/c5nr01519g

  12. Magnetic properties of α−MnO{sub 2} and Co-doped α−MnO{sub 2} nanowires

    SciTech Connect

    Stella, C. Soundararajan, N. Ramachandran, K.

    2014-04-24

    α−MnO{sub 2} and Co-doped α−MnO{sub 2} nanowires (NWs) were synthesized by hydrothermal method. The structural characterization by XRD revealed the tetragonal structure of α−MnO{sub 2}. The formation of one dimensional (1D) NWs of pure and Co-doped α−MnO{sub 2} was confirmed from SEM. From UV-Vis absorption spectra, it is found that both pure and Co-doped α−MnO{sub 2} NWs showed blue shift compared to bulk, which revealed the quantum confinement in the synthesized samples. The magnetic properties were analyzed by VSM, which suggest that pure and doped α−MnO{sub 2} exhibit ferromagnetic behavior at room temperature (RT)

  13. Thickness dependence of structural and transport properties of Co-doped BaFe2As2 on Fe buffered MgO substrates

    NASA Astrophysics Data System (ADS)

    Iida, Kazumasa; Hänisch, Jens; Trommler, Sascha; Haindl, Silvia; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard

    2011-12-01

    We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe buffered MgO substrates by pulsed laser deposition. The superconducting transition temperature and the texture quality of Co-doped BaFe2As2 films improve with increasing d due to a gradual relief of the tensile strain. For d >= 90 nm an additional 110 textured component of Co-doped BaFe2As2 was observed, which leads to an upward shift in the angle-dependent critical current density at H \\parallel c . These results indicate that the grain boundaries created by the 110 textured component may contribute to the c-axis pinning.

  14. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (μ-PL) and μ-PL excitation (μ-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  15. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Zhu, Huichao; Ao, Jin-Ping

    2016-03-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10-9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs.

  16. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    NASA Astrophysics Data System (ADS)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  17. A photovoltaic effect in the metal-high-resistive GaAs:Cr contact

    NASA Astrophysics Data System (ADS)

    Budnitskii, D. L.; Novikov, V. A.; Prudaev, I. A.; Тоlbanov, О. P.; Yaskevich, Т. М.

    2012-12-01

    The results of studies of photovoltaic effect in the contacts of a number of metals with high-resistive GaAs:Cr are reported. High-resistive (HR) GaAs was obtained by diffusion of chromium in n-GaAs. V, Cr, and Al were used as metals. In was employed in order to produce ohmic contacts. Photovoltage was excited by red light (hν = 1.85 eV), and the excitation intensity amounted to 1.5ṡ1021 сm-2ṡs-1. Photovoltage was measured in the presence of asymmetric pairs of contacts to HR-GaAs: V-In, Cr-In, and Al-In. It is shown that V, Cr, and Al form barriers for electrons in the contact with high-resistive GaAs:Cr. The photovoltage of the contacts is determined by the inversion of conductivity type of the near-surface GaAs layer under the metal contact. The hole concentration in the inversion layer can be as high as ≈1015 сm-3. An In contact to high-resistive GaAs:Cr is an ohmic injecting contact for electrons with the barrier height for holes ≈0.9 eV.

  18. [Effects of GA, and CPPU on grape fruit adjacent leaf photosynthesis and fruit quality].

    PubMed

    Xin, Shou-peng; Liu, Shuai; Yu, Yang; Nie, Song-qing; Gao, Zhi-hong; Tao, Jian-min

    2015-06-01

    Taken the grape cultivar 'Shine Muscat' as the material, the effect of the combination of GA3 and CPPU on the light-response curves in the fruit adjacent leaves and fruit quality were investigated two weeks after blossoming. The results showed that non-rectangular hyperbolic model was more suitable for grape fruit adjacent leaf light response curve-fitting. Pn and g(s) of fruit adjacent leaves among all treatments increased with the increasing light intensity under the combination treat-ments of 25 mg · L(-1) GA3 and 5, 10, 15, 20 mg · L(-1) CPPU, respectively, but Ci decreased. Fruit quality increased with the increasing CPPU concentration under the combination treatments of 25 mg · L(-1) GA3 and 5, 10, 15 mg · L(-1) CPPU, respectively. Grape fruit adjacent leaf photosynthesis under the 25 mg · L(-1) GA3 + 20 mg · L(-1) CPPU treatment was higher than the other treatments. The fruit quality under the 25 mg · L(-1) GA3 + 20 mg · L(-1) CPPU treatment was lower than the 25 mg · L(-1) GA3 + 15 mg · L(-1) CPPU treatment. It indicated that reasonable CPPU treatment concentration could improve fruit adjacent leaf photosynthetic ability and fruit quality. Too high concentration made the fruit quality lower instead. The 25 mg · L(-1) GA3 + 15 mg · L(-1) CPPU treatment was most appropriate in two weeks after blossoming. PMID:26572037

  19. Erbium and nitrogen co-doped SrTiO{sub 3} with highly visible light photocatalytic activity and stability by solvothermal synthesis

    SciTech Connect

    Xu, Jing; Wei, Yuelin; Huang, Yunfang; Wang, Jing; Zheng, Xuanqing; Sun, Zhixian; Wu, Ying; Tao, Xinling; Fan, Leqing; Wu, Jihuai

    2015-10-15

    Highlights: • Er/N co-doped SrTiO{sub 3} was prepared by a solvothermal process at low temperature. • The co-doping induces the band gap narrowing and prominent absorbance in visible light region. • The samples show excellent catalytic activity and stability under visible light irradiation. - Abstract: Erbium–nitrogen co-doped SrTiO{sub 3} photocatalysts have been synthesized by a facile solvothermal method. The resulting samples were analyzed by FE-SEM, XRD, BET-surface area and UV–vis. The UV–vis absorption spectra of these powders indicated that erbium–nitrogen co-doped SrTiO{sub 3} possessed stronger absorption bands in the visible light region in comparison with that of pure SrTiO{sub 3}. The occurrence of the erbium–nitrogen co-doped cubic SrTiO{sub 3} induced the higher photocatalytic activities for the degradation of methyl orange (MO) under irradiation by ultraviolet light and visible light, respectively, being superior to that of pure SrTiO{sub 3} and commercial TiO{sub 2} (P-25) powders. In addition, the Er–N co-doped SrTiO{sub 3} (initial molar ratios of Sr/Er/N = 1:0.015:0.1, designated as S5) sample showed the best photocatalytic activity with the degradation rate as high as 98% after 30 min under the visible light irradiation. After five cycles, the photocatalytic activity of the S5 catalyst showed no significant decrease, which indicated that the photocatalysts were stable under visible light irradiation.

  20. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    SciTech Connect

    Hiroki, Masanobu Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki

    2014-11-10

    We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

  1. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

    NASA Astrophysics Data System (ADS)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of ‑2 V and drain bias of ‑15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm2/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  2. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    PubMed

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-01-01

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG. PMID:27021054

  3. Built-in-polarization field effect on lattice thermal conductivity of AlxGa1-xN/GaN heterostructure

    NASA Astrophysics Data System (ADS)

    Pansari, Anju; Gedam, Vikas; Kumar Sahoo, Bijaya

    2015-12-01

    The built-in-polarization field at the interface of AlxGa1-xN/GaN heterostructure enhances elastic constant, phonon velocity, Debye temperature and their bowing constants of barrier material AlxGa1-xN. The combined phonon relaxation time of acoustics phonons has been computed for with and without built-in-polarization field at room temperature for different aluminum (Al) content (x). Our result shows that the built-in-polarization field suppresses the scattering mechanisms and enhances the combined relaxation time. The thermal conductivity of AlxGa1-xN has been estimated as a function of temperature for x=0, 0.1, 0.5 and 1 for with and without polarization field. Minimum thermal conductivity has been observed for x=0.1 and 0.5. Analysis shows that up to a certain temperature (different for different x) the polarization field acts as negative effect and reduces the thermal conductivity and after this temperature thermal conductivity is significantly contributed by polarization field. This signifies pyroelectric character of AlxGa1-xN. The pyroelectric transition temperature of AlxGa1-xN alloy has been predicted for different x. Our study reports that room temperature thermal conductivity of AlxGa1-xN/GaN heterostructure is enhanced by built-in-polarization field. The temperature dependence of thermal conductivity for x=0.1 and 0.5 are in line with prior experimental studies. The method we have developed can be used for the simulation of heat transport in nitride devices to minimize the self heating processes and in polarization engineering strategies to optimize the thermoelectric performance of AlxGa1-xN/GaN heterostructures.

  4. Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

    NASA Astrophysics Data System (ADS)

    Laifi, J.; Chaaben, N.; Bouazizi, H.; Fourati, N.; Zerrouki, C.; El Gmili, Y.; Bchetnia, A.; Salvestrini, J. P.; El Jani, B.

    2016-06-01

    We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN) grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were grown by metal organic vapor phase epitaxy (MOVPE) in a temperature range of 500-600 °C on oriented (001), (113), (112) and (111) GaAs substrates. The growth was in-situ monitored by laser reflectometry (LR). Using an optical model, including time-dependent surface roughness and growth rate profiles, simulations were performed to best approach the experimental reflectivity curves. Results are discussed and correlated with ex-situ analyses, such as atomic force microscopy (AFM) and UV-visible reflectance (SR). We show that the GaN nucleation layers growth results the formation of GaN islands whose density and size vary greatly with both growth temperature and substrate orientation. Arrhenius plots of the growth rate for each substrate give values of activation energy varying from 0.20 eV for the (001) orientation to 0.35 eV for the (113) orientation. Using cathodoluminescence (CL), we also show that high temperature (800-900 °C) GaN layers grown on top of the low temperature (550 °C) GaN nucleation layers, grown themselves on the GaAs substrates with different orientations, exhibit cubic or hexagonal phase depending on both growth temperature and substrate orientation.

  5. Hierarchical assembly of Ti(IV)/Sn(II) co-doped SnO₂ nanosheets along sacrificial titanate nanowires: synthesis, characterization and electrochemical properties.

    PubMed

    Wang, Hongkang; Xi, Liujiang; Tucek, Jiri; Zhan, Yawen; Hung, Tak Fu; Kershaw, Stephen V; Zboril, Radek; Chung, C Y; Rogach, Andrey L

    2013-10-01

    Hierarchical assembly of Ti(IV)/Sn(II)-doped SnO₂ nanosheets along titanate nanowires serving as both sacrificial templates and a Ti(IV) source is demonstrated, using SnCl2 as a tin precursor and Sn(II) dopants and NaF as the morphology controlling agent. Excess fluoride inhibits the hydrolysis of SnCl2, promoting heterogeneous nucleation of Sn(II)-doped SnO₂ on the titanate nanowires due to the insufficient oxidization of Sn(II) to Sn(IV). Simultaneously, titanate nanowires are dissolved forming Ti(4+) species under the etching effect of in situ generated HF resulting in spontaneous Ti(4+) ion doping of SnO₂ nanosheets formed under hydrothermal conditions. Compositional analysis indicates that Ti(4+) ions are incorporated by substitution of Sn sites at a high level (16-18 at.%), with uniform distribution and no phase separation. Mössbauer spectroscopy quantified the relative content of Sn(II) and Sn(IV) in both Sn(II)-doped and Ti(IV)/Sn(II) co-doped SnO₂ samples. Electrochemical properties were investigated as an anode material in lithium ion batteries, demonstrating that Ti-doped SnO₂ nanosheets show improved cycle performance, which is attributed to the alleviation of inherent volume expansion of the SnO₂-based anode materials by substituting part of Sn sites with Ti dopants. PMID:23904051

  6. Preparation, spectroscopic characterization and energy transfer investigation of iron-chromium diffusion co-doped ZnSe for mid-IR laser applications

    NASA Astrophysics Data System (ADS)

    Wang, XiangYong; Chen, Zhe; Zhang, Lianhan; Jiang, Benxue; Xu, Min; Hong, Jiaqi; Wang, Yaqi; Zhang, Peixiong; Zhang, Long; Hang, Yin

    2016-04-01

    The spectroscopic characterization and energy transfer mechanism of iron-chromium co-doped ZnSe polycrystalline (Cr,Fe:ZnSe) were reported with dimension of 15 mm × 15 mm × 2 mm obtained by controlled post-growth thermal diffusion method. The infrared absorption is characterized by a strong broad-band centered at 1770 nm which can be attributed to the only spin-allowed transition 5T2 → 5E within the 3d4 shell of Cr2+ ions. Photoluminescence spectrum shows a relatively strong broad emission band centered at 4.1 μm with a width of 0.8 μm (FWHM) under 1770 nm excitation at room temperature and reveals effective Cr2+ → Fe2+ energy transfer process. Room temperature photoluminescence decay about 8 μs was measured. All the results indicate that Cr,Fe:ZnSe could achieve laser operation at 3.7-4.5 μm via Cr2+ → Fe2+ energy transfer using a more convenient laser pump source in the near IR region.

  7. Microstructure, optical and structural characterization of Cd0.98Fe0.02S thin films co-doped with Zn by chemical bath deposition method

    NASA Astrophysics Data System (ADS)

    Pitchaimani, K.; Amalraj, L.; Muthukumaran, S.

    2016-04-01

    Fe-doped CdS (Cd0.98Fe0.02S) and Fe, Zn co-doped CdS (Cd0.98-xZnxFe0.02S (x=0.02, 0.04, and 0.06)) thin films have been successfully deposited on glass substrate by chemical bath deposition technique using aqueous ammonia solution at pH = 9.5. Phase purity of the samples having cubic structure with (111) as the preferential orientation was confirmed by X-ray diffraction technique. Shift of X-ray diffraction peak position towards higher angle side and decrease of lattice parameters, volume and crystallite size confirmed the proper incorporation of Zn into Cd-Fe-S except Zn=6%. The compositional analysis (EDX) showed that Cd, Fe, Zn and S are present in the films. The enhanced band gap and higher transmittance observed in Cd0.94Zn0.04Fe0.02S films are the effective way to use solar energy and enhance its photocatalytic activity under visible light. The enhanced green band emission than blue band by Zn-doping evidenced the existence of higher defect states.

  8. One-pot hydrothermal synthesis of CuBi co-doped mesoporous zeolite Beta for the removal of NOx by selective catalytic reduction with ammonia

    PubMed Central

    Xie, Zhiguo; Zhou, Xiaoxia; Wu, Huixia; Chen, Lisong; Zhao, Han; Liu, Yan; Pan, Linyu; Chen, Hangrong

    2016-01-01

    A series of CuBi co-doped mesoporous zeolite Beta (CuxBiy-mBeta) were prepared by a facile one-pot hydrothermal treatment approach and were characterized by XRD, N2 adsorption-desorption, TEM/SEM, XPS, H2-TPR, NH3-TPD and in situ DRIFTS. The catalysts CuxBiy-mBeta were applied to the removal of NOx by selective catalytic reduction with ammonia (NH3-SCR), especially the optimized Cu1Bi1-mBeta achieved the high efficiency for the removal of NOx and N2 selectivity, superior water and sulfur resistance as well as good durability. The excellent catalytic performance could be attributed to the acid sites of the support and the synergistic effect between copper and bismuth species. Moreover, in situ DRIFTS results showed that amides NH2 and NH4+ generated from NH3 adsorption could be responsible for the high selective catalytic reduction of NOx to N2. In addition, a possible catalytic reaction mechanism on Cu1Bi1-mBeta for the removal of NOx by NH3-SCR was proposed for explaining this catalytic process. PMID:27445009

  9. The contribution of vanadium and titanium on improving methylene blue decolorization through heterogeneous UV-Fenton reaction catalyzed by their co-doped magnetite.

    PubMed

    Liang, Xiaoliang; Zhong, Yuanhong; Zhu, Sanyuan; Ma, Lingya; Yuan, Peng; Zhu, Jianxi; He, Hongping; Jiang, Zheng

    2012-01-15

    This study investigated the methylene blue (MB) decolorization through heterogeneous UV-Fenton reaction catalyzed by V-Ti co-doped magnetites, with emphasis on comparing the contribution of V and Ti cations on improving the adsorption and catalytic activity of magnetite. In the well crystallized spinel structure, both Ti(4+) and V(3+) occupied the octahedral sites. Ti(4+) showed a more obvious effect on increasing specific surface area and superficial hydroxyl amount than V(3+) did, resulting in a significant improvement of the adsorption ability of magnetite to MB. The UV introduction greatly accelerated MB degradation. And magnetite with more Ti and less V displayed better catalytic activity in MB degradation through heterogeneous UV-Fenton reaction. The transformation of degradation products and individual contribution from vanadium and titanium on improving adsorption and catalytic activity of magnetite were also investigated. These new insights are of high importance for well understanding the interface interaction between contaminants and metal doped magnetites, and the environmental application of natural and synthetic magnetites. PMID:22119302

  10. Nonlinear optical properties and surface-plasmon enhanced optical limiting in Ag-Cu nanoclusters co-doped in SiO{sub 2} Sol-Gel films

    SciTech Connect

    Kiran, P. Prem; Shivakiran Bhaktha, B.N.; Rao, D. Narayana; De, Goutam

    2004-12-01

    The nonlinear optical properties and the role of the surface-plasmon resonance (SPR) on optical limiting (OL) properties of Ag-Cu nanoclusters co-doped in SiO{sub 2} matrix prepared using the sol-gel technique with a Cu/Ag molar ratio of 1, 2 and 3, respectively, are presented. The studies were made using the second harmonic of high-power nanosecond and picosecond Nd:YAG lasers. These films show a self-defocusing nonlinearity with both nanosecond and picosecond pulses and a good nonlinear absorption behavior with the nanosecond pulse excitation. The nonlinear refractive index decreased with decreasing particle size, whereas the nonlinear absorption increased with an increase in Cu concentration. The observed nonlinear absorption is explained by taking into account the cumulative effect of both the intraband and interband mechanisms. The excitation near the SPR of Cu resulted in an enhanced OL behavior with increasing Cu concentration. No such concentration dependence is observed when the excitation is near the SPR of Ag, however, the limiting threshold is reduced approximately 10-17 times. Excitation at wavelengths far below the SPR of Ag and Cu has not shown any OL behavior. The major contribution toward OL is observed to be from the interband absorption and from a possible energy transfer within the higher unoccupied states of Cu and Ag. Although nonlinear scattering is observed at higher intensities, its contribution is found to be much less than that of the nonlinear absorption assisted by an energy transfer.

  11. Chromium-niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal-insulator transition

    NASA Astrophysics Data System (ADS)

    Miyazaki, Kenichi; Shibuya, Keisuke; Suzuki, Megumi; Sakai, Kenichi; Fujita, Jun-ichi; Sawa, Akihito

    2016-05-01

    We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal-insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1-x-yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  12. Study of luminescence properties of novel Er3+ single-doped and Er3+/Yb3+ co-doped tellurite glasses.

    PubMed

    Gao, Yuan; Nie, Qiu-Hua; Xu, Tie-Feng; Shen, Xiang

    2005-04-01

    The novel Er(3+) single-doped and Er(3+)/Yb(3+) co-doped tellurite glasses were prepared. The effect of Yb(2)O(3) concentration on absorption spectra, emission spectra and upconversion spectra of glasses were measured and investigated. The emission intensity, fluorescence full width at half maximum (FWHM) and upconversion luminescence of Er(3+) go up with the increasing concentration of Yb(3+) ions. The maximum FWHM of (4)I(13/2) --> (4)I(15/2) transition of Er(3+) is approximate 77 nm for 1.41 x 10(21)ions/cm(3) concentration of Yb(3+)-doped glass. The visible upconversion emissions at about 532, 546 and 659 nm, corresponding to the (2)H(11/2) --> (4)I(15/2), (4)S(3/2) --> (4)I(15/2) and (4)F(9/2) --> (4)I(15/2) transitions of Er(3+), respectively, were simultaneously observed under the excitation at 970 nm. Subsequently, the possible upconversion mechanisms and important role of Yb(3+) on the green and red emissions were discussed and compared. The results demonstrate that this kind of tellurite glass may be a potentially useful material for developing potential amplifiers and upconversion optical devices. PMID:15741130

  13. One-pot hydrothermal synthesis of CuBi co-doped mesoporous zeolite Beta for the removal of NOx by selective catalytic reduction with ammonia.

    PubMed

    Xie, Zhiguo; Zhou, Xiaoxia; Wu, Huixia; Chen, Lisong; Zhao, Han; Liu, Yan; Pan, Linyu; Chen, Hangrong

    2016-01-01

    A series of CuBi co-doped mesoporous zeolite Beta (CuxBiy-mBeta) were prepared by a facile one-pot hydrothermal treatment approach and were characterized by XRD, N2 adsorption-desorption, TEM/SEM, XPS, H2-TPR, NH3-TPD and in situ DRIFTS. The catalysts CuxBiy-mBeta were applied to the removal of NOx by selective catalytic reduction with ammonia (NH3-SCR), especially the optimized Cu1Bi1-mBeta achieved the high efficiency for the removal of NOx and N2 selectivity, superior water and sulfur resistance as well as good durability. The excellent catalytic performance could be attributed to the acid sites of the support and the synergistic effect between copper and bismuth species. Moreover, in situ DRIFTS results showed that amides NH2 and NH4(+) generated from NH3 adsorption could be responsible for the high selective catalytic reduction of NOx to N2. In addition, a possible catalytic reaction mechanism on Cu1Bi1-mBeta for the removal of NOx by NH3-SCR was proposed for explaining this catalytic process. PMID:27445009

  14. One-pot hydrothermal synthesis of CuBi co-doped mesoporous zeolite Beta for the removal of NOx by selective catalytic reduction with ammonia

    NASA Astrophysics Data System (ADS)

    Xie, Zhiguo; Zhou, Xiaoxia; Wu, Huixia; Chen, Lisong; Zhao, Han; Liu, Yan; Pan, Linyu; Chen, Hangrong

    2016-07-01

    A series of CuBi co-doped mesoporous zeolite Beta (CuxBiy-mBeta) were prepared by a facile one-pot hydrothermal treatment approach and were characterized by XRD, N2 adsorption-desorption, TEM/SEM, XPS, H2-TPR, NH3-TPD and in situ DRIFTS. The catalysts CuxBiy-mBeta were applied to the removal of NOx by selective catalytic reduction with ammonia (NH3-SCR), especially the optimized Cu1Bi1-mBeta achieved the high efficiency for the removal of NOx and N2 selectivity, superior water and sulfur resistance as well as good durability. The excellent catalytic performance could be attributed to the acid sites of the support and the synergistic effect between copper and bismuth species. Moreover, in situ DRIFTS results showed that amides NH2 and NH4+ generated from NH3 adsorption could be responsible for the high selective catalytic reduction of NOx to N2. In addition, a possible catalytic reaction mechanism on Cu1Bi1-mBeta for the removal of NOx by NH3-SCR was proposed for explaining this catalytic process.

  15. Enhanced photoluminescence properties of Sm3+ ions in Cu+ and Sn2+ co-doped P2O5:BaO glass

    NASA Astrophysics Data System (ADS)

    Jiménez, José A.

    2014-12-01

    Luminescent glasses activated with Sm3+ ions are of current interest given their potential for a wide range of photonic applications. In this work, Sm3+-containing P2O5:BaO glasses are prepared by a simple melt-quench method, and the influence of CuO and SnO co-doping on Sm3+ photoluminescence (PL) is investigated. Optical absorption, solid-state 31P nuclear magnetic resonance spectroscopy, and PL spectroscopy are employed in the assessment of material optical and structural properties. The data indicates that monovalent copper ions and twofold-coordinated Sn centers are successfully stabilized in the matrix and both species can enhance the orange-red emission of Sm3+ ions. The optical properties of the material after heat treatment have been also assessed. Results indicate the chemical reduction of ionic copper via Sn2+ ultimately producing Cu nanoparticles as evidenced by the surface plasmon resonance. As a result, Sm3+ PL diminishes consistent with an excitation energy transfer to plasmonic Cu particles, i.e. the "plasmonic diluent" effect prevails.

  16. Effect of device geometry on static and dynamic performance of AlGaN/GaN-on-Si high electron mobility transistor

    NASA Astrophysics Data System (ADS)

    Shi, Jin-Shan; Huang, Hong-Fan; Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Wang, Peng-Fei

    2016-08-01

    This paper discusses the effects of several geometric parameters in DC and RF performances of AlGaN/GaN high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrates. Those parameters include the dependency of gate length (L g), gate cap length (L cap) and gate-to-source distance (L gs). It is shown that decreasing L g and L gs can both improve maximum drain current and transconductance behaviors. The fabricated 50 μm wide GaN-HEMT exhibits the maximum drain current of 1 A mm‑1 at V g = 2 V and maximum extrinsic transconductance G mmax of 240 mS mm‑1. Besides, decreasing L g and L cap also provides the improvement on current gain frequency (fT ) and maximum oscillation cut off frequency (f MAX). The fT of 40 GHz and f MAX of 55 GHz at V ds = 5 V are demonstrated by GaN-HEMT device featuring L g of 200 nm, L cap of 300 nm and L gs of 1.2 μm, which can realize the compact solid-state power amplifier used in S and C band. However, gate-to-source distance has little effect on RF performance of AlGaN/GaN HEMTs. Those results compared in our study are not only very essential for accurate GaN-based HEMT device modeling and fabrication, but are also vital to better understanding of their device physics.

  17. Facile synthesis and enhanced visible light photocatalytic activity of N and Zr co-doped TiO2 nanostructures from nanotubular titanic acid precursors

    PubMed Central

    2013-01-01

    Zr/N co-doped TiO2 nanostructures were successfully synthesized using nanotubular titanic acid (NTA) as precursors by a facile wet chemical route and subsequent calcination. These Zr/N-doped TiO2 nanostructures made by NTA precursors show significantly enhanced visible light absorption and much higher photocatalytic performance than the Zr/N-doped P25 TiO2 nanoparticles. Impacts of Zr/N co-doping on the morphologies, optical properties, and photocatalytic activities of the NTA precursor-based TiO2 were thoroughly investigated. The origin of the enhanced visible light photocatalytic activity is discussed in detail. PMID:24369051

  18. Up-conversion luminescence from Er3+, Yb3+ co-doped GeO II-PbF II-Nb IIO 5 glass ceramic

    NASA Astrophysics Data System (ADS)

    Lv, Jinwen; Sang, Lanfen; Zhang, Jing; Fu, Xingguo

    2006-01-01

    The paper reports a new up-conversion luminescence material based on Yb 3+, Er 3+ co-doped germanate glass ceramic, the matrix system is GeO II-PbF II-Nb IIO 5. The luminescence characteristics of the Yb3+ , Er3+ co-doped glass ceramic have been studied. The structural properties of the germinate glass ceramic have been analysed by X-ray diffraction. Under the condition of 980nm semiconductor laser pumping, the green fluorescence intensity shows that the existence of niobate components plays an important role for up-conversion luminescence.

  19. Effect of Cobalt Concentration and Oxygen Vacancy on Magnetism of Co Doped ZnO Nanorods.

    PubMed

    Li, Congli; Che, Ping; Sun, Changyan; Li, Wenjun

    2016-03-01

    Zn(1-x)Co(x)O (x = 0-0.07) single-crystalline nanorods were prepared by a modified microemulsion route. The crystalline structure, morphology, optical, and hysteresis loop at low and room temperature of as-prepared materials were characterized by XRD, TEM, PL spectra, and magnetic measurement respectively. The nanorods are 80-250 nm in diameter and about 3 μm in length. X-ray diffraction data, TEM images confirm that the materials synthesized in optimal conditions are ZnO:Co single crystalline solid solution without any impurities related to Co. The PL spectra show that the ferromagnetic samples exhibit strong Zn interstitials and oxygen vacancy emission indicating defects may stabilize ferromagnetic order in the obtained diluted magnetic semiconductors. Magnetic measurements show that the Zn(1-x)Co(x)O nanorods exist obvious ferromagnetic characteristics with T(c) above 300 K. M(s) and coercivities first increase and then decrease with dopant concentration increasing, reaching the highest for 3% doping level. The structural and magnetic properties of these samples support the hypothesis that the FM of DMS nanorods is due to a defect mediated mechanism instead of cobalt nanoclusters and carrier mediated. PMID:27455697

  20. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

    SciTech Connect

    Luan, Chongbiao; Lin, Zhaojun Zhao, Jingtao; Wang, Yutang; Lv, Yuanjie; Chen, Hong; Wang, Zhanguo

    2014-07-28

    The theoretical model of the polarization Coulomb field scattering (PCF) caused by the polarization charge density variation at the AlGaN/AlN interface in strained AlGaN/AlN/GaN heterostructure field-effect transistors has been developed. And the theoretical values for the electron drift mobility, which were calculated using the Matthiessen's rule that includes PCF, piezoelectric scattering, polar optical-phonon scattering, and interface roughness scattering, are in good agreement with our experimental values. Therefore, the theoretical model for PCF has been confirmed.

  1. Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells

    SciTech Connect

    Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

    2000-07-01

    AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

  2. Effects of Si-doping on magnetic properties of Ga1-xCrxN

    NASA Astrophysics Data System (ADS)

    Zhou, Zhongpo; Yang, Zongxian; Liu, Chang

    2015-01-01

    Ga1-xCrxN thin films with and without the Si doping have been prepared by molecular beam epitaxy. The samples have been investigated by X-ray diffraction, X-ray photoemission spectroscopy, photoluminescence, optical absorption spectra and magnetic measurements. It has been confirmed that for the undoped samples Cr in GaN is predominantly trivalent when substituting for Ga and that the Cr 3d state appears within the band gap of GaN. In Si doped specimens the upward shifts of the chemical potential are observed, and the electrons supplied by the Si doping are trapped at Cr sites forming Cr2+. As a result, the Si doping effects show an increase of the Curie temperature, and a reduction of the saturation magnetization in the Ga1-xCrxN:Si samples. The significant effect on the ferromagnetism with Si doping in Ga1-xCrxN is explained by the percolation theory of bound magnetic polarons.

  3. Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

    SciTech Connect

    Ghosh, Saptarsi Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Kabi, Sanjib; Chakraborty, Apurba; Chang, Edward Yi; Biswas, Dhrubes

    2014-08-18

    Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the current dispersion characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed to modulate the dislocation density among the heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow pulsed I-V measurements show severe compressions and appear to be significantly dependent on the threading dislocation density. By analyzing the corresponding slow detrapping process, a deep-level trap with emission time constant in the order of seconds was identified as the cause. Among the specimens, both in the epilayers and at the surface, the number of dislocations was found to have a notable influence on the spatial distribution of deep-level trap density. The observations confirm that the commonly observed degraded frequency performance among AlGaN/GaN HFETs in the form of DC-radio frequency dispersions can at least partly be correlated with threading dislocation density.

  4. Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Ghosh, Saptarsi; Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Chakraborty, Apurba; Chang, Edward Yi; kabi, Sanjib; Biswas, Dhrubes

    2014-08-01

    Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the current dispersion characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs). A growth strategy is developed to modulate the dislocation density among the heterostructures grown on silicon by plasma-assisted molecular-beam epitaxy. Slow pulsed I-V measurements show severe compressions and appear to be significantly dependent on the threading dislocation density. By analyzing the corresponding slow detrapping process, a deep-level trap with emission time constant in the order of seconds was identified as the cause. Among the specimens, both in the epilayers and at the surface, the number of dislocations was found to have a notable influence on the spatial distribution of deep-level trap density. The observations confirm that the commonly observed degraded frequency performance among AlGaN/GaN HFETs in the form of DC-radio frequency dispersions can at least partly be correlated with threading dislocation density.

  5. Si doping effects on (In,Ga)N nanowires

    SciTech Connect

    Kamimura, J. Ramsteiner, M.; Geelhaar, L.; Riechert, H.

    2014-12-28

    Si doped (In,Ga)N nanowires (In content up to 0.4) are grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. By increasing the Si doping level, coalescence between nanowires is reduced and a more uniform morphology is obtained. The Raman spectra from highly doped samples show a characteristic broad band in the optical phonon frequency range, which became more prominent at higher doping levels. This Raman band can be explained by plasmon-phonon scattering from a free electron gas with strong wave-vector nonconservation, providing evidence for successful n-type doping. The measured plasmon-phonon modes are explained by lineshape simulations taking into account the simultaneous contribution of both the charge-density fluctuation and the impurity induced Fröhlich scattering mechanisms. The according lineshape analysis allows for an estimate of the carrier concentration.

  6. Properties of transparent (Gd,Lu)3(Al,Ga)5O12:Ce ceramic with Mg, Ca and Ce co-dopants

    NASA Astrophysics Data System (ADS)

    Wang, Yimin; Baldoni, Gary; Brecher, Charles; Rhodes, William H.; Shirwadkar, Urmila; Glodo, Jarek; Shah, Ishaan; Ji, Chuncheng

    2015-08-01

    Cerium activated mixed lutetium/gadolinium- and aluminum/gallium-based garnets have great potential as host scintillators for medical imaging applications. (Gd,Lu)3(Al,Ga)5O12:Ce and denoted as GLuGAG feature high effective atomic number and good light yield, which make it particularly attractive for Positron Emission Tomography (PET) and other γ-ray detection applications. For PET application, rapid decay and good timing resolution are extremely important. Most Ce-doped mixed garnet materials such as GLuGAG:Ce, have their main decay component at around 80 ns. However, it has been reported that the decays of some single crystal scintillators (e.g., LSO and GGAG) can be effectively accelerated by codoping with selected additives such as Ca, Mg and B. In this study, transparent polycrystalline (Gd,Lu)3(Al,Ga)5O12:Ce ceramics codoped with Ca or Mg or additional Ce, were fabricated by the sinter-HIP approach. It was found the transmission of the ceramics are closely related to the microstructure of the ceramics. As the co-dopant levels increase, 2nd phase occurs in the ceramic and thus transparency of the ceramic decreases. Ca and Mg co-doping in GLuGAG:Ce ceramic effectively accelerate decays of GLuGAG:Ce ceramics at a cost of light output. However, additional Ce doping in the GLuGAG:Ce has no benefit on improving decay time but, on the other hand, reduces transmission, light output. The mechanism under the different scintillation behaviors with Mg, Ca and Ce dopants are discussed. The results suggest that decay time of GLuGAG:Ce ceramics can be effectively tailored by co-doping GLuGAG:Ce ceramic with Mg and Ca for applications with optimal timing resolution.

  7. Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures

    SciTech Connect

    Averkiev, N. S.; Slipchenko, S. O. Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S.

    2007-03-15

    Generation of a difference-frequency wave by two electromagnetic waves propagating in a heterolaser is analyzed theoretically. Calculations are carried out for InGaAs/GaAs/AlGaAs heterostructures of design optimized to attain maximum lasing power. It is shown that phase matching between the primary waves and the difference-frequency wave may persist over a distance of {approx}1 mm, comparable to the cavity length (2-3 mm), and the conversion coefficient can be as large as several percent.

  8. Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Zaidi, Z. H. Lee, K. B.; Qian, H.; Jiang, S.; Houston, P. A.; Guiney, I.; Wallis, D. J.; Humphreys, C. J.

    2014-12-28

    In this work, we have compared SiN{sub x} passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiN{sub x} passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 10{sup 4}–10{sup 5} to 10{sup 7}) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (D{sub it}) is reduced (from 4.86 to 0.90 × 10{sup 12 }cm{sup −2} eV{sup −1}), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiN{sub x} passivation after full device fabrication results in the reduction of D{sub it} and improves the surface related current collapse.

  9. High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors

    NASA Astrophysics Data System (ADS)

    Yoshikawa, Akira; Yamamoto, Yuma; Murase, Takuya; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2016-05-01

    We report the development of high-performance AlGaN/AlN heterostructure-field-effect-transistor-type (HFET) photosensors with a p-type GaN optical gate and detection wavelengths that are restricted to 220–280 nm. These photosensors employ a two-dimensional electron gas induced at the hetero-interface between Al0.6Ga0.4N and Al0.5Ga0.5N as a highly conductive channel. In addition, a p-type GaN optical gate is employed to deplete a channel. Consequently, we obtained a high photosensitivity of over 4 × 103 A/W and an externally low dark current density of approximately 5 × 10‑10 A/mm at a source–drain voltage of 3 V. We also determined that the detection range of light wavelength in these HFET photosensors can be controlled by controlling the AlN molar fraction in the AlGaN channel layer. The results are very promising for the development of completely solar-blind high-performance photosensors with high photosensitivity.

  10. Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

    SciTech Connect

    Kim, Hyo-Jin; Yoo, Sang-Im

    2014-12-15

    An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn{sub 0.8}Zn{sub 0.2})Fe{sub 2}O{sub 4} (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn{sub 0.8}Zn{sub 0.2}){sub 1−x}Ga{sub x}Fe{sub 2}O{sub 4} (x = 0 ∼ 0.1) were prepared by the conventional solid state reaction at 1400°C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga{sup 3+} ion substitution for the (Mn, Zn){sup 2+} site.

  11. Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

    SciTech Connect

    Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

    2015-09-15

    AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs to examine FETs for both device responses and surface chemistry changes. Measurements demonstrated threshold voltage shifting after the functionalization and soaking processes, but demonstrated stable FET behavior throughout. X-ray photoelectron spectroscopy and atomic force microscopy confirmed peptides attachment to device surfaces before and after water soaking. Results of this work point to the stability of peptide coated functionalized AlGaN/GaN devices in solution and support further research of these devices as disposable, long term, in situ biosensors.

  12. Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Gotow, Takahiro; Fujikawa, Sachie; Fujishiro, Hiroki I.; Ogura, Mutsuo; Yasuda, Tetsuji; Maeda, Tatsuro

    2015-02-01

    The effects of HCl treatment and predeposition vacuum annealing (VA) on n-type GaSb/GaAs metal-oxide-semiconductor (MOS) structures with the atomic layer deposition (ALD) of Al2O3 dielectrics are studied. We obtained MOS structures with good Fermi level modulation by HCl treatment prior to the deposition of Al2O3. From X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ga2O3 content increases during the Al2O3 deposition, whereas the amounts of Sb components are reduced. The excess growth of Ga2O3 is inhibited by the reductions in the amounts of Sb components by the HCl treatment. Further reductions in the amounts of Sb components are observed following predeposition VA, indicating a lower density of states (Dit). However, the frequency dispersion in the capacitance-voltage (C-V) characteristics increases with predeposition VA at higher temperatures.

  13. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

    NASA Astrophysics Data System (ADS)

    Liuan, Li; Jiaqi, Zhang; Yang, Liu; Jin-Ping, Ao

    2016-03-01

    In this paper, TiN/AlOx gated AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 °C with the contact resistance approximately 1.6 Ω·mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/AlOx gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AlGaN/GaN MOS-HFETs. Project supported by the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260).

  14. The effects of GA and ABA treatments on metabolite profile of germinating barley.

    PubMed

    Huang, Yuqing; Cai, Shengguan; Ye, Lingzhen; Hu, Hongliang; Li, Chengdao; Zhang, Guoping

    2016-02-01

    Sugar degradation during grain germination is important for malt quality. In malting industry, gibberellin (GA) is frequently used for improvement of malting quality. In this study, the changes of metabolite profiles and starch-degrading enzymes during grain germination, and as affected by GA and abscisic acid (ABA) were investigated using two wild barley accessions XZ72 and XZ95. Totally fifty-two metabolites with known structures were detected and the change of metabolite during germination was time- and genotype dependent. Sugars and amino acids were the most dramatically changed compounds. Addition of GA enhanced the activities of starch-degrading enzymes, and increased most metabolites, especially sugars and amino acids, whereas ABA had the opposite effect. The effect varied with the barley accessions. The current study is the first attempt in investigating the effect of hormones on metabolite profiles in germinating barley grain, being helpful for identifying the factors affecting barley germination or malt quality. PMID:26304431

  15. Low field induced giant magnetocaloric effect in TmGa compound

    NASA Astrophysics Data System (ADS)

    Mo, Zhao-Jun; Shen, Jun; Yan, Li-Qin; Tang, Cheng-Chun; Lin, Jing; Wu, Jian-Feng; Sun, Ji-Rong; Wang, Li-Chen; Zheng, Xin-Qi; Shen, Bao-Gen

    2013-07-01

    The magnetic properties and magnetocaloric effect in TmGa compound are investigated. TmGa exhibits two successive magnetic transitions: ferromagnetic-antiferromagnetic at TFA = 12 K and antiferromagnetic-paramagnetic transition at TN = 15 K. Under field changes of 1 and 2 T, giant reversible values of magnetic entropy change (12.9 and 20.6 J/kg K) and large values of refrigerant capacity (69 and 149 J/kg) are observed, respectively. Additionally, the maximal values of adiabatic temperature change are 3.2 and 5 K for field changes of 1 and 2 T, respectively. The TmGa compound with excellent magnetocaloric effect is expected to have effective applications in low temperature magnetic refrigeration.

  16. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

    NASA Astrophysics Data System (ADS)

    Lakhdar, Nacereddine; Lakehal, Brahim

    2016-04-01

    We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate (TM) GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.

  17. Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

    PubMed

    Dong, Hailiang; Sun, Jing; Ma, Shufang; Liang, Jian; Lu, Taiping; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

    2016-03-01

    The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results. PMID:26879291

  18. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  19. Absolute quantum cutting efficiency of Tb{sup 3+}-Yb{sup 3+} co-doped glass

    SciTech Connect

    Duan, Qianqian; Qin, Feng; Zhang, Zhiguo; Zhao, Hua; Cao, Wenwu

    2013-12-07

    The absolute quantum cutting efficiency of Tb{sup 3+}-Yb{sup 3+} co-doped glass was quantitatively measured by an integrating sphere detection system, which is independent of the excitation power. As the Yb{sup 3+} concentration increases, the near infrared quantum efficiency exhibited an exponential growth with an upper limit of 13.5%, but the visible light efficiency was reduced rapidly. As a result, the total quantum efficiency monotonically decreases rather than increases as theory predicted. In fact, the absolute quantum efficiency was far less than the theoretical value due to the low radiative efficiency of Tb{sup 3+} (<61%) and significant cross-relaxation nonradiative loss between Yb{sup 3+} ions.

  20. The photoluminescence and structural properties of (Ce, Yb) co-doped silicon oxides after high temperature annealing

    SciTech Connect

    Heng, C. L. Li, J. T.; Su, W. Y.; Yin, P. G.; Finstad, T. G.

    2015-01-28

    We studied the photoluminescence (PL) and structural properties of Ce and Yb co-doped silicon oxide films after high temperature annealing. The PL spectra of Ce{sup 3+} and Yb{sup 3+} ions were sensitive to the structural variation of the films, and the Yb PL intensities were significantly enhanced especially upon 1200 °C annealing. X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, indicated that rare earth silicates and the CeO{sub 2} phase had formed in the oxides. The proportions of the phases varied with the “nominal Si-richness” of the films. Energy transfer from the excited Ce{sup 3+} to Yb{sup 3+} can be inferred from both PL excitation and decay spectra.