Science.gov

Sample records for gaas monolithic surface

  1. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  2. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  3. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  4. Government systems and GaAs monolithic components

    NASA Astrophysics Data System (ADS)

    Sieger, K. J.

    1983-12-01

    The current state of monolithic GaAs technology and its current and future applications to government systems are reviewed, with attention given to the government investment strategy, commercial market impact, new technology, and challenges from silicon technology. Data obtained from a survey to determine the status of GaAs IC technology are presented. These contain the system type and acronym, a technical description of the system, the critical research and development needed to develop the particular IC, specific applications and functions of the IC in the system, the year of implementation, and the potential chip buyer. High volume applications, with chip counts of one million and more, are identified as phased arrays (radar and communication), expendable decoys, missile seekers, and satellite signal processors. Problem areas, future trends, and areas of uncertainty are discussed.

  5. A Ka-band GaAs monolithic phase shifter

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J. J.; Contolatis, A.; Bauhahn, P. E.; Chao, C.

    1983-01-01

    The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

  6. Fabrication of Monolithic Integrated Series-Connected GaAs Photovoltaic Cells for Concentrator Applications

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaroh; Yamada, Yugo; Senou, Minato; Sugiyama, Masakazu; Nakano, Yoshiaki

    2012-10-01

    Aiming at reducting in Joule energy loss of a photovoltaic cell under sunlight concentration, monolithic integration of GaAs cells has been realized, in which five subcells were connected in series and the total surface area of the cells occupied over 80% of the whole chip area. Using plasma etching with Cl2, a sufficiently sharp mesa for device isolation was obtained. Insulation between etched mesa sidewalls and interconnect electrodes proved to be the most significant issues for the purpose of eliminating shunt resistance and securing a reasonable fill factor; the SiO2 layer deposited by sputtering was much superior to polyimide as an insulator. The fabricated test device showed a short circuit current density of 20.7 mA/cm2 and an open circuit voltage of 4.79 V, which were consistent with the values for a single subcell.

  7. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  8. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    NASA Technical Reports Server (NTRS)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  9. Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

    NASA Technical Reports Server (NTRS)

    Kunath, R. R.; Bhasin, K. B.

    1986-01-01

    The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

  10. Performance of monolithic integrated series-connected GaAs solar cells under concentrated light

    NASA Astrophysics Data System (ADS)

    Seno, Minato; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2013-09-01

    The concentrator photovoltaic (CPV) system provides excellent cost performance and conversion efficiency by increasing the concentration ratio. The problem is that concentration ratio is limited by short-circuit current density (Jsc) due to cell resistance loss. In order to achieve much larger concentration ratio, the monolithically integrated series-connected GaAs photovoltaic (PV) cells were fabricated. By dividing a cell into sub-cells on a chip and connecting them in series, the cell provides smaller short-circuit current (Isc) and larger open-circuit voltage (Voc). This approach can reduce joule energy loss inside a cell without decreasing electrical power output and allow much larger concentration ratio. In our design, 10 series-connected sub-cells, with bypass diodes in parallel with each sub-cell, were integrated monolithically on semi-insulating GaAs. When some sub-cells in the array were shaded, the bypass diodes prevented the shaded sub-cells from breakdown and reduced fluctuation of power output. The detection area of a unit cell was 1.73 mm2 and an entire detection area occupied over 68% of the whole chip area. The arrayed 10 cells exhibited Voc of 9.0 V under illumination (AM 1.5G). The series-connected cell achieved maximum efficiency at higher concentration ratio than non-series-connected cell.

  11. Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

    NASA Astrophysics Data System (ADS)

    Petersen, W. C.; Siu, D. P.; Cook, H. F.

    1991-12-01

    Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

  12. Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Petersen, W. C.; Siu, D. P.; Cook, H. F.

    1991-01-01

    Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

  13. Process control for 0.25 um GaAs microwave monolithic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hudgens, Rick D.; Meyers, Shirley; Small, Bret A.; Salzman, Keith; Rhine, David; Class, Randy

    1994-05-01

    Gallium arsenide metal semiconductor field effect transistors (GaAs MESFETs) are used in analog microwave monolithic integrated circuits (MMICs) because of their high frequency response. Common applications for MMICs include low noise and power amplifiers for use in satellite communication and missile guidance systems. The performance of MESFETs is improved with smaller gate lengths, but to consistently achieve the highest performance, control methods must be in place for the critical processes. Gate length control is the key parameter in maintaining the rf performance and a lack of gate pinch off is the major yield loss category. This paper describes the process and the tools that Texas Instruments uses to monitor the critical parameters. It also describes the control methods and reviews the major contributors to variations in the process.

  14. Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Kot, R. A.; Oliver, J. D.; Wilson, S. G.

    1984-01-01

    A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.

  15. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  16. The 20 GHz GaAs monolithic power amplifier module development

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

  17. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    SciTech Connect

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano; Frigeri, Cesare; Falub, Claudiu V.; Känel, Hans von

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  18. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  19. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  20. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  1. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Astrophysics Data System (ADS)

    Dinetta, L. C.; Hannon, M. H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  2. Velocity surface measurements for ZnO films over /001/-cut GaAs

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

    1994-01-01

    A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

  3. The surface chemistry of GaAs atomic layer epitaxy

    SciTech Connect

    Creighton, J.R.; Banse, B.A.

    1991-01-01

    In this paper we review three proposed mechanisms for GaAs ALE and review or present data support or contradiction of these mechanisms. Surface chemistry results clearly demonstrated that TMGa irreversibly chemisorbs on the Ga-rich GaAs(100) surface. The reactive sticking coefficient (RSC) of TMGa on the adsorbate-free Ga-rich GaAs(100) surface was measured to be {approximately}0.5, conclusively demonstrating that the selective adsorption'' mechanism of ALE is not valid. We describe kinetic evidence for methyl radical desorption in support of the adsorbate inhibition'' mechanism. The methyl radical desorption rates determined by temperature programmed desorption (TPD) demonstrate that desorption is at least a factor of {approximately}10 faster from the As-rich c(2 {times} 8)/(2 {times} 4) surface than from the Ga-rich surface. It is disparity in CH{sub 3} desorption rates between the As-rich and Ga-rich surfaces that is largely responsible for GaAs ALE behavior. A gallium alkyl radical (e.g. MMGa) is also observed during TPD and molecular beam experiments, in partial support of the flux balance'' mechanism. Stoichiometry issues of ALE are also discussed. We have discovered that arsine exposures typical of atmospheric pressure and reduced pressure ALE lead to As coverages {ge} 1 ML, which provides the likely solution to the stoichiometry question regarding the arsine cycle. 32 refs., 6 figs.

  4. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  5. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1–90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. Assessment of dynamic surface leaching of monolithic surface road materials.

    PubMed

    Paulus, Hélène; Schick, Joachim; Poirier, Jean-Eric

    2016-07-01

    Construction materials have to satisfy, among others, health and environment requirements. To check the environmental compatibility of road construction materials, release of hazardous substances into water must be assessed. Literature mostly describes the leaching behaviour of recycled aggregates for potential use in base or sub-base layers of roads. But little is known about the release of soluble substances by materials mixed with binders and compacted for intended use on road surface. In the present study, we thus performed a diffusion test with sequential renewal of water during a 64 day period according to CEN/TS 16637-2 specifications, on asphalt concretes and hydraulically bound monoliths, two common surface road materials. It is shown that release of dangerous substances is limited in these hydrodynamic conditions. It was particularly true for asphalt concrete leachates where no metallic trace element, sulphate, chloride or fluoride ion could be quantified. This is because of the low hydraulic conductivity and the low polarity of the petroleum hydrocarbon binder of these specimens. For hydraulically bound materials around 20,000 mg/m(2) of sulphate diffused from the monoliths. It is one order of magnitude higher than chloride diffusion and two orders of magnitude higher than fluoride release. No metallic trace element, except small quantities of copper in the last eluate could be quantified. No adverse effect is to be expected for human and environmental health from the leachates of these compacted surface road construction materials, because all the measured parameters were below EU (Council Directive 98/83/EC) or WHO guidelines for drinking water standards. PMID:27039367

  8. Monolithic GaAs digitizer for space-based laser pulse spreading effect

    NASA Technical Reports Server (NTRS)

    Lao, Bennig; Staples, Edward

    1988-01-01

    A 6-bit 1-GHz digitizer was designed to analyze the 1-ns pulse spreading effects in a space based altimeter. The digitizer consisted of four 4-bit flash A/D converters and a 6-bit encoder. Also, the converter utilized four 4-bit converters and a 4-to-6 bit encoder to achieve 6 bit resolution at the 1 GHz sample rate. The design was unique because it utilized only the inverters and NOR gates for the converters and encoder, hence it could be fabricated using the existing state-of-the-art GaAs processing techniques. This GHz digitizer has many commercial applications. It could be applicable to: (1) digital microwave transmission system for the telecommunication industries, (2) pulse monitoring in high kinetic chemical reactions, (3) transient signals in the medical field, and (4) microwave signals in astronomy.

  9. ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei

    1995-01-01

    A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  10. Selective photon-stimulated desorption of hydrogen from GaAs surfaces.

    PubMed

    Petravic, M; Deenapanray, P N; Comtet, G; Hellner, L; Dujardin, G; Usher, B F

    2000-03-01

    Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces. PMID:11017257

  11. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  12. Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD

    SciTech Connect

    Baucom, K.C.; Creighton, J.R.; Moffat, H.K.

    1999-01-29

    We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their structure and stoichiometry using a variety of surface science techniques. The Type III phase is a newly characterized As-rich (1 X 2)-CH{sub 3} reconstruction. The Type II phase is a metastable derivative of the Type I phase. RDS also indicates that the surface during MOCVD has a considerable degree of heterogeneity. Deposition rates were measured over a similar range of conditions and the kinetically-limited regime was found to correlate with the Type III phase. A simple kinetic model was found to quantitatively describe the deposition rates.

  13. Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Jiang, W. Y.; Liu, J. Q.; So, M. G.; Myrtle, K.; Kavanagh, K. L.; Watkins, S. P.

    2005-04-01

    We report the identification of reflectance difference (RD) spectra for GaAs (0 0 1) surfaces in the presence of small quantities of trimethylbismuth (TMBi) vapor under organometallic vapor phase epitaxy (OMVPE) conditions. An RD spectrum similar to that observed from the previously reported ( 3×8) Sb-terminated surface of GaAs is reported, suggesting strong similarities between the Bi and Sb terminated surfaces. Because of the low vapor pressure of Bi, it is stable under extended hydrogen purges at growth temperatures of 450C. Whereas As or Sb coverage typically saturates at 1-2 monolayers on the GaAs (0 0 1) surface under OMVPE conditions, no saturation of the Bi coverage is observed in this work. Extended exposure to TMBi results in the formation of Bi islands whose size increase with exposure time and TMBi concentration.

  14. ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

    NASA Technical Reports Server (NTRS)

    Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei; Kim, Yoonkee; Hunt, William D.

    1995-01-01

    A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  15. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  16. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  17. SNMS characterization of ion irradiated GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Scandurra, A.; Licciardello, A.; Torrisi, A.; Weigert, R.; Puglisi, O.

    1996-09-01

    This study deals with the phenomena that influence the relative intensity of the sputtered neutral yields when altered layers of GaAs are analysed by using sputtered neutral mass spectrometry (SNMS) technique. The altered layers were obtained by irradiation with He +, Ne +, Ar +, Kr +, Xe + and O 2+ ions of various energies, in order to explore different nuclear stopping power regimes. The main result is a considerable change both of the absolute and relative yields of As and Ga as a function of the bombarding time, type and energy of primary ions. The absolute variation in the sputtered neutral signal is probably related with the amorphization of the outer layers. The relative variation in the yield of As with respect to Ga is not due to true preferential sputtering but to surface segregation followed by removal of the segregated species during the bombardment.

  18. Surface defects in GaAs wafer processes

    NASA Astrophysics Data System (ADS)

    Matsushita, H.; Ishida, M.; Kikawa, J.

    1990-06-01

    The causes of micro- and macro-irregularities observed on GaAs(100) polished wafers were investigated. From the results, the wafer processes were improved so that a high-quality surface was obtained without orange peel, haze, or pits. For 3-inch wafers the flatness was improved to less than 2 μm in TTV and the warp to less than 5 μm. Improvements in the wafer processes were: development of a better polishing solution, filtering of this solution with maintenance of the pad conditions, thereby eliminating scratches, annealing at high temperature to eliminate pits, advances in slicing and lapping to reduce warp, and three-stage double-sided polishing to eliminate dimples and to improve TTV.

  19. A study of binding biotinylated nano-beads to the surface of (001) GaAs

    NASA Astrophysics Data System (ADS)

    Ding, Ximing; Moumanis, Khalid; Dubowski, Jan J.; Frost, Eric H.

    2006-02-01

    We have investigated the deposition of biotinylated nano-beads on the surface of GaAs. The deposition procedure involved either direct coating of (001) GaAs with nano-beads, or binding the nano-beads with avidin immobilized on the surface of (001) GaAs through the interface of biotin and the NH II terminal group of 11-amino-1-undecanethiol (HS(CH II) 11NH II). The efficiency of binding was tested by washing the samples in a solution of a commercial detergent and by subjecting them to a deionized water ultrasonic bath. The results indicate that nano-beads deposited directly on the surface of (001) GaAs withstand the detergent washing test but they are easily removed by ultrasonic washing. In contrast, the nano-beads attached to (001) GaAs through the avidin-biotin-thiol interface survive the ultrasonic washing tests.

  20. Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface

    NASA Astrophysics Data System (ADS)

    Ren, Bin; Miao, Zhuang; Hou, Zhi-Peng; Cheng, Hong-Chang; Shi, Feng; Jiao, Gang-Cheng; Bai, Xiao-Feng; Niu, Sen; Wang, Long; Fu, Ling-Yun

    2014-09-01

    Using the projected augmented wave potential by the density functional theory based upon gradual gradient approach method and the slab model, from the calculated surface, we identify the relaxed atoms sites of GaAs(110) surface, the electronic structure of elements K and O adsorpted on binding sites of ideal GaAs(110) surface have also been calculated, especially the total energy of the adsorption system. The comparison results of calculated total energy showed: for K and O elements at highest coverage of Θ=1ML on GaAs(110) surface, they were not formed to local domain of competitive chemical adsorption, while they were formed to a compound uniformity phase of cooperative chemical adsorption. Our calculated results providing theoretical basis and reference for the application of alkali oxidation adsorpted on GaAs surface to form a negative electron affinity photocathode.

  1. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect

    Bietti, Sergio Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano; Fedorov, Alexey

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  2. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  3. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  4. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  5. Nanoparticle-Functionalized Porous Polymer Monolith Detection Elements for Surface-Enhanced Raman Scattering

    PubMed Central

    Liu, Jikun; White, Ian; DeVoe, Don L.

    2011-01-01

    The use of porous polymer monoliths functionalized with silver nanoparticles is introduced in this work for high-sensitivity surface-enhanced Raman scattering (SERS) detection. Preparation of the SERS detection elements is a simple process comprising the synthesis of a discrete polymer monolith section within a silica capillary, followed by physically trapping silver nanoparticle aggregates within the monolith matrix. A SERS detection limit of 220 fmol for Rhodamine 6G (R6G) is demonstrated, with excellent signal stability over a 24 h period. The capability of the SERS-active monolith for label-free detection of biomolecules was demonstrated by measurements of bradykinin and cyctochrome c. The SERS-active monoliths can be readily integrated into miniaturized micro-total-analysis systems for on-line and label-free detection for a variety of biosensing, bioanalytical, and biomedical applications. PMID:21322579

  6. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  7. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.; Beskin, I.

    2014-05-05

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  8. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

    SciTech Connect

    Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

    2005-04-15

    We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level.

  9. Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions

    SciTech Connect

    Venugopal, V.; Basu, T.; Garg, S.; Majumder, S.; Sarangi, S. N.; Som, T.; Das, P.; Bhattacharyya, S. R.; Chini, T. K.

    2010-10-04

    Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

  10. Monolithic phononic crystals with a surface acoustic band gap from surface phonon-polariton coupling.

    PubMed

    Yudistira, D; Boes, A; Djafari-Rouhani, B; Pennec, Y; Yeo, L Y; Mitchell, A; Friend, J R

    2014-11-21

    We theoretically and experimentally demonstrate the existence of complete surface acoustic wave band gaps in surface phonon-polariton phononic crystals, in a completely monolithic structure formed from a two-dimensional honeycomb array of hexagonal shape domain-inverted inclusions in single crystal piezoelectric Z-cut lithium niobate. The band gaps appear at a frequency of about twice the Bragg band gap at the center of the Brillouin zone, formed through phonon-polariton coupling. The structure is mechanically, electromagnetically, and topographically homogeneous, without any physical alteration of the surface, offering an ideal platform for many acoustic wave applications for photonics, phononics, and microfluidics. PMID:25479504

  11. The Influence of Surface Topography and Surface Chemistry on the Anti-Adhesive Performance of Nanoporous Monoliths.

    PubMed

    Eichler-Volf, Anna; Xue, Longjian; Dornberg, Gregor; Chen, He; Kovalev, Alexander; Enke, Dirk; Wang, Yong; Gorb, Elena V; Gorb, Stanislav N; Steinhart, Martin

    2016-08-31

    We designed spongy monoliths allowing liquid delivery to their surfaces through continuous nanopore systems (mean pore diameter ∼40 nm). These nanoporous monoliths were flat or patterned with microspherical structures a few tens of microns in diameter, and their surfaces consisted of aprotic polymer or of TiO2 coatings. Liquid may reduce adhesion forces FAd; possible reasons include screening of solid-solid interactions and poroelastic effects. Softening-induced deformation of flat polymeric monoliths upon contact formation in the presence of liquids enhanced the work of separation WSe. On flat TiO2-coated monoliths, WSe was smaller under wet conditions than under dry conditions, possibly because of liquid-induced screening of solid-solid interactions. Under dry conditions, WSe is larger on flat TiO2-coated monoliths than on flat monoliths with a polymeric surface. However, under wet conditions, liquid-induced softening results in larger WSe on flat monoliths with a polymeric surface than on flat monoliths with an oxidic surface. Monolithic microsphere arrays show antiadhesive properties; FAd and WSe are reduced by at least 1 order of magnitude as compared to flat nanoporous counterparts. On nanoporous monolithic microsphere arrays, capillarity (WSe is larger under wet than under dry conditions) and solid-solid interactions (WSe is larger on oxide than on polymer) dominate contact mechanics. Thus, the microsphere topography reduces the impact of softening-induced surface deformation and screening of solid-solid interactions associated with liquid supply. Overall, simple modifications of surface topography and chemistry combined with delivery of liquid to the contact interface allow adjusting WSe and FAd over at least 1 order of magnitude. Adhesion management with spongy monoliths exploiting deployment (or drainage) of interfacial liquids as well as induction or prevention of liquid-induced softening of the monoliths may pave the way for the design of artificial

  12. Origin of Fermi-level pinning at GaAs surfaces and interfaces

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-01

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

  13. Origin of Fermi-level pinning at GaAs surfaces and interfaces.

    PubMed

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-10

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated. PMID:25372411

  14. Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening

    NASA Astrophysics Data System (ADS)

    Spindt, C. J.; Spicer, W. E.

    1989-10-01

    It has been shown by several workers that the passivation of GaAs surfaces using sulfides results in a large reduction in the surface recombination velocity accompanied by an increase in the band bending on n-type samples. This apparently contradictory pair of results leads to the suggestion that the responsible electronic states are a midgap donor compensated by an acceptor near the valence-band maximum. We explore the consequences of such a model, particularly when the midgap state is assumed to be a double donor. In the double donor case, simple qualitative arguments indicate that the surface recombination velocity can be reduced by a factor much greater than the reduction in surface-state density. The model is consistent with observations made using a variety of experimental techniques. A correlation between the electronic states and surface chemistry is made, and the As and Ga antisite defects are discussed as candidates for the donor and acceptor states.

  15. Preparation of porous polymer monoliths featuring enhanced surface coverage with gold nanoparticles

    PubMed Central

    Lv, Yongqin; Alejandro, Fernando Maya; Fréchet, Jean M. J.

    2012-01-01

    A new approach to the preparation of porous polymer monoliths with enhanced coverage of pore surface with gold nanoparticles has been developed. First, a generic poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith was reacted with cystamine followed by the cleavage of its disulfide bonds with tris(2-carboxylethyl)phosphine which liberated the desired thiol groups. Dispersions of gold nanoparticles with sizes varying from 5 to 40 nm were then pumped through the functionalized monoliths. The materials were then analyzed using both energy dispersive X-ray spectroscopy and thermogravimetric analysis. We found that the quantity of attached gold was dependent on the size of nanoparticles, with the maximum attachment of more than 60 wt% being achieved with 40 nm nanoparticles. Scanning electron micrographs of the cross sections of all the monoliths revealed the formation of a non-aggregated, homogenous monolayer of nanoparticles. The surface of the bound gold was functionalized with 1-octanethiol and 1-octadecanethiol, and these monolithic columns were used successfully for the separations of proteins in reversed phase mode. The best separations were obtained using monoliths modified with 15, 20, and 30 nm nanoparticles since these sizes produced the most dense coverage of pore surface with gold. PMID:22542442

  16. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  17. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  18. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  19. A novel surface modification technique for forming porous polymer monoliths in poly(dimethylsiloxane)

    PubMed Central

    Burke, Jeffrey M.; Smela, Elisabeth

    2012-01-01

    A new method of surface modification is described for enabling the in situ formation of homogenous porous polymer monoliths (PPMs) within poly(dimethylsiloxane) (PDMS) microfluidic channels that uses 365 nm UV illumination for polymerization. Porous polymer monolith formation in PDMS can be challenging because PDMS readily absorbs the monomers and solvents, changing the final monolith morphology, and because PDMS absorbs oxygen, which inhibits free-radical polymerization. The new approach is based on sequentially absorbing a non-hydrogen-abstracting photoinitiator and the monomers methyl methacrylate and ethylene diacrylate within the walls of the microchannel, and then polymerizing the surface treatment polymer within the PDMS, entangled with it but not covalently bound. Four different monolith compositions were tested, all of which yielded monoliths that were securely anchored and could withstand pressures exceeding the bonding strength of PDMS (40 psi) without dislodging. One was a recipe that was optimized to give a larger average pore size, required for low back pressure. This monolith was used to concentrate and subsequently mechanical lyse B lymphocytes. PMID:22685511

  20. XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Cossu, G.; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G. M.

    In order to prepare suitable surfaces for molecular beam epitaxy (MBE), sacrificial thin oxide layers on HCl etched GaAs(100) surfaces were grown by both air and UV/ozone exposure. Passive films were subsequently removed by vacuum thermal desorption to achieve surfaces that were smooth and clean on an atomic scale. The evolution of the surface chemical composition, as a function of vacuum desorption temperature, has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS results have evidenced for air and UV/ozone exposed GaAs(100) surfaces a relationship between desorption temperature and surface chemical composition; indeed, the oxide removal is temperature dependent and sequentially selective as follows: As 2O 3. AsO and Ga 2O 3. Furthermore, XPS results have shown that air-grown films have a chemical composition and thermal desorption behaviour different from UV/ozone treated materials. Indeed, these latter have an As 2O 3/Ga 2O 3 and an unoxidized As/Ga ratio close to unity for as grown and thermal treated at 580°C surfaces, respectively. By contrast, air-exposed GaAs(100) materials are Ga 2O 3-enriched and after vacuum thermal desorption treatments have never a stoichiometric composition(As (GaAs)/Ga (GaAs)= 1). Furthermore UV/ozone treated GaAs(100) surfaces subjected to a vacuum thermal treatment at 580°C, have a troublesome organic contamination level below XPS detectability, whereas from air-exposed surfaces, carbon is not completely thermally removable

  1. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    NASA Astrophysics Data System (ADS)

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-02-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.

  2. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching.

    PubMed

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  3. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  4. Aging and detergent washing effects of the surface of (001) and (110) GaAs passivated with hexadecanethiol

    NASA Astrophysics Data System (ADS)

    Moumanis, Kh.; Ding, X.; Dubowski, J. J.; Frost, E. H.

    2006-08-01

    We report on aging and detergent washing effects in GaAs wafers passivated with hexadecanethiol (HDT) [HS(CH2)15CH3]. The evolution of the photoluminescence (PL) signal from GaAs was measured at room temperature as a function of time, up to 1000h, for thiolated (001) GaAs that was solvent cleaned and etched using standard procedures, and for thiolated (110) GaAs that was obtained by cleaving in air. For 2h of thiolation time, the decay of the PL signal from (001) GaAs and (110) GaAs could be fitted, respectively, with double and single exponential functions. This indicates that at least two different types of non-adiative recombination centers (NRRC) form on the (001) surface. The overall density of surface states formed on (110) GaAs is significantly lower than those on (001) GaAs. A single exponential decay of the PL signal has been observed for 18h thiolated samples. The strong increase of the PL signal after detergent washing of (001) GaAs suggests that this treatment is effective in removal of some of the NRRC. The 19-fold enhancement of the PL signal, in comparison to that of the oxidized sample, has been obtained using the sample that, following the etching and detergent washing procedures, was thiolated with HDT.

  5. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    NASA Astrophysics Data System (ADS)

    Shutthanandan, V.; Zhu, Z.; Stutzman, M. L.; Hannon, F. E.; Hernandez-Garcia, C.; Nandasiri, M. I.; Kuchibhatla, S. V. N. T.; Thevuthasan, S.; Hess, W. P.

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL). Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS), atomic force microscopy, and secondary ion mass spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF) photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  6. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  7. A low current GaAs monolithic image rejection downconverter for X-band broadcast satellite applications

    NASA Astrophysics Data System (ADS)

    Yoshimasu, Toshihiko; Sakuno, Keiichi; Matsumoto, Nobuyuki; Suematsu, Eiji; Tsukao, Toshiya; Tomita, Takashi

    1992-12-01

    This paper describes the design, fabrication and performance of a fully integrated X-band monolithic image rejection downconverter. The downconverter consists of a low noise amplifier, an image rejection mixer and an intermediate frequency amplifier. The downconverter receives RF signals between 11.7 and 12.3 GHz and converts them down to IF frequency between 1.0 and 1.6 GHz. A conversion gain of 46 +/- 1 dB, a noise figure of less than 3.3 dB and an image rejection of more than 30 dB have been achieved over the RF frequency range. The chip size of the downconverter is 1.9 x 2.2 mm and its current dissipation is only 43 mA. Since the downconverter has sufficient image rejection due to an on-chip bandstop filter, it requires no off-chip circuits. Therefore, the use of this down-converter in X-band broadcast satellite applications will lead to a great reduction in size and current dissipation.

  8. Monolithic integration of 1.3-μm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

    NASA Astrophysics Data System (ADS)

    Fink, Thomas; Hurm, Volker; Raynor, Brian; Koehler, Klaus; Benz, Willy; Ludwig, M.

    1995-04-01

    For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometers have been fabricated successfully on GaAs substrates using InGaAs metal-semiconductor-metal (MSM) photodiodes and AlGaAs/GaAs/AlGaAs high-electron-mobility transistors (HEMTs). Using molecular beam epitaxy (MBE), the photodetector layers were grown on top of a double (delta) -doped AlGaAs/GaAs/AlGaAs HEMT structure which allows the fabrication of enhancement and depletion field effect transistors. The photoabsorbing InGaAs layer was grown at 500 degree(s)C. To fabricate the optoelectronic receivers, first, an etch process using a combination of non-selective wet etching and selective reactive ion etching was applied to produce mesas for the photoconductors and to uncover the HEMT structure in all other areas. For the electronic circuits, our well-established HEMT process for 0.3-micrometers transistor gates was used which includes electron-beam lithography for gate definition and optical lithography for NiCr thin films resistors, capacitors, and inductors. The interdigitated MSM photodiode fingers were also fabricated using electron-beam lithography. For interconnecting the electronic circuits and the photodetectors, air bridges were employed. The entire process was performed on 2-inch wafers with more than 90% yield of functional receivers. The finished receiver--basically an MSM photodetector linked to a transimpedance amplifier--is operational at an incident wavelength of 1.3 micrometers at data rates up to 1.2 Gbit/s. The sensitivity of the detectors is 0.16 A/W at a 10 V bias.

  9. Surface analysis of different oriented GaAs substrates annealed under bismuth flow

    NASA Astrophysics Data System (ADS)

    Fitouri, H.; Moussa, I.; Rebey, A.; El Jani, B.

    2007-03-01

    Several orientations of GaAs substrates, including (1 0 0), (4 1 1), (1 1 1) and (5 1 1) have been annealed in a metalorganic vapour phase epitaxy (MOVPE) horizontal reactor at different annealing temperatures and under different trimethyl-bismuth (TMBi) flux. Surface morphology of the annealed GaAs substrates was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show islands formation on all the studied samples. The density and size of Bi islands vary greatly with annealing temperature and TMBi flow. For different substrate orientations, the activation energies were deduced from Arrhenius plot of island density. Except for (5 1 1) oriented GaAs, all the studied orientations show the same activation energy of 1.8 eV. For low annealing temperature 420 °C, and under different Bi flux, each oriented substrate shows a specific behaviour. For higher temperatures 700 °C and above Bi islands are totally removed and the substrates are smooth. Surface change of (1 0 0) oriented GaAs substrate was in situ monitored by laser reflectometry.

  10. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation. PMID:25565000

  11. Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

    SciTech Connect

    Mauk, M.G.; Xu, S.; Arent, D.J.; Mertens, R.P.; Borghs, G.

    1989-01-16

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na/sub 2/S, KOH, RuCl/sub 3/, and K/sub 2/Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5 x 10/sup 6/ cm/s (untreated surface) to 10/sup 3/ cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ''dark'' current.

  12. Initial stages of oxidation of GaAs(111)2 × 2-Ga surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Soria, F.

    1987-04-01

    The initial interaction of oxygen at room temperature with GaAs(111)2 × 2-Ga surfaces has been studied by quantitative Auger analysis and low-energy electron diffraction, under different electron irradiation and gas ionization conditions. Oxygen fills first the non-vacancy overlayer sites with a preferential bond to the Ga atoms. This adsorption phase is characterized by the absence of chemical shifts in the Ga Auger peaks that involve core levels. The oxidation stage begins with the occupation of the underlayer sites below the first Ga-As bilayer. For coverages lower than 2 monolayers oxygen adsorption and incorporation takes place without any loss of Ga or As atoms of the surface layers. Electron irradiation and gas ionization of the oxygen-covered surface increase the kinetics up to two orders of magnitude, but no changes in the adsorption sites and/or occupation sequence have been detected.

  13. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  14. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  15. Behavior of Al on Clean and Oxidized GaAs(110) Surfaces

    NASA Astrophysics Data System (ADS)

    Kim, Hyunwoo

    1993-04-01

    The adsorption of Al on clean and oxidized GaAs(110) surfaces was studied. The characteristics of an oxide surface formed in vacuum and during the chemical etching process of the tip have been investigated using the field desorption (FD) cleaning method and the retarding potential analyzer (RPA) equipped with an argon laser. The results obtained for the FD clean surface and on the oxidized surface are discussed in terms of the RPA threshold and work function change. The oxide films formed at relatively low temperatures on the GaAs(110) surface can easily be desorbed by FD. The intrinsic potential drops across the oxide surface disappear suddenly at a certain field value. This may indicate that the desorbed surface region is composed of a metallic species such as Ga. Changes in work function are observed but there is no change in the threshold values (Vth) with deposition of Al on the field-desorbed clean surface. The thick layers of Al on the oxidized surface completely cancel the effect of oxide on Vth, which decreases to the value of a metallic clean surface. In addition, the value of Vth decreases dramatically to that of a metallic clean surface by absorption of the laser beam on the oxidized surface, whereas only the thermal effect is seen on a metallic clean surface.

  16. X-ray imaging and diffraction from surface phonons on GaAs

    NASA Astrophysics Data System (ADS)

    Sauer, W.; Streibl, M.; Metzger, T. H.; Haubrich, A. G. C.; Manus, S.; Wixforth, A.; Peisl, J.; Mazuelas, A.; Härtwig, J.; Baruchel, J.

    1999-09-01

    Surface acoustic waves (SAWs) are excited on the GaAs (001) surface by using interdigital transducers, designed for frequencies of up to 900 MHz. The emitted phonons with wavelengths down to 3.5 μm are visualized and characterized by combined x-ray diffraction techniques. Using stroboscopic topography, the SAW emission of a parallel and a focusing transducer geometry are imaged. High-resolution x-ray diffraction profiles show up to 12 phonon-induced satellite reflections besides the GaAs (004) reflection, with a width of 9 arcsec each. The diffraction pattern is simulated numerically, applying the kinematical scattering theory to a model crystal. From fits to measured diffraction profiles at different excitation voltages, the SAW amplitudes were calculated and found to be in the sub-nm range.

  17. Direct Measurement of Surface Defect Level Distribution Associated with GaAs Antiphase Boundaries

    SciTech Connect

    Xu, Q.; Hsu, J.W.

    1999-01-01

    Using an electrostatic force microscope, we measure surface contact potential (SCP) variations across antiphase boundaries (APBs) on GaAs films grown on Ge substrates. The SCP at the APBs is consistently and reproducibly measured to be 30 mV higher than that at GaAs domains. This is due to Fermi levels being pinned at different surface states. The identical electrical behavior observed for all APBs indicates that they are the lowest energy {l_brace}110{r_brace} orientation. The sign of observed Fermi level shift is consistent with a prevalence of Ga-Ga bonds at real {l_brace}110{r_brace} APBs. {copyright} {ital 1999} {ital The American Physical Society}

  18. Grafting zwitterionic polymer onto cryogel surface enhances protein retention in steric exclusion chromatography on cryogel monolith.

    PubMed

    Tao, Shi-Peng; Zheng, Jie; Sun, Yan

    2015-04-10

    Cryogel monoliths with interconnected macropores (10-100μm) and hydrophilic surfaces can be employed as chromatography media for protein retention in steric exclusion chromatography (SXC). SXC is based on the principle that the exclusion of polyethylene glycol (PEG) on both a hydrophilic chromatography surface and a protein favors their association, leading to the protein retention on the chromatography surface. Elution of the retained protein can be achieved by reducing PEG concentration. In this work, the surface of polyacrylamide-based cryogel monolith was modified by grafting zwitterionic poly(carboxybetaine methacrylate) (pCBMA), leading the increase in the surface hydrophilicity. Observation by scanning electron microscopy revealed the presence of the grafted pCBMA chain clusters on the cryogel surface, but pCBMA grafting did not result in the changes of the physical properties of the monolith column, and the columns maintained good recyclability in SXC. The effect of the surface grafting on the SXC behavior of γ-globulin was investigated in a wide flow rate range (0.6-12cm/min). It was found that the dynamic retention capacity increased 1.4-1.8 times by the zwitterionic polymer grafting in the flow rate range of 1.5-12cm/min. The mechanism of enhanced protein retention on the zwitterionic polymer-grafted surface was proposed. The research proved that zwitterionic polymer modification was promising for the development of new materials for SXC applications. PMID:25757821

  19. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

    SciTech Connect

    Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro; Shimojo, Fuyuki

    2014-12-08

    Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

  20. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    SciTech Connect

    Leon, R.P.; Bailey, S.G.; Mazaris, G.A.; Williams, W.D.

    1986-10-13

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1-bar1-bar1)Ga planes with 6 ..mu..m periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  1. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  2. GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Junji; Nanbu, Kazuo; Ishikawa, Tomonori; Kondo, Kazuo

    1988-01-01

    GaAs surface cleaning by thermal oxidation and sublimation prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate and epitaxial layer interface. The carrier depletion between the substrate and epitaxial films, measured by a C-V carrier profiling technique, was shown to decrease significantly with an increase in the thickness of the thermal oxidation. The concentration of carbon contamination near the substrate-epitaxial interface was measured using secondary ion mass spectroscopy. The carbon concentration correlated very well with the carrier depletion. Therefore, the main origin of the carrier depletion is believed to be the carbon concentration of the initial growth surface. Based on these results, the thermal oxidation and sublimation of a semi-insulating GaAs substrate was successfully applied to improve the mobility and sheet concentration of the two-dimensional electron gas in selectively doped GaAs/N-Al0.3Ga0.7As heterostructures with very thin GaAs buffer layers.

  3. Characterization of GaAs(100) surfaces by AES and LEED

    NASA Astrophysics Data System (ADS)

    Mendez, M. A.; Palomares, F. J.; Cuberes, M. T.; Gonzalez, M. L.; Soria, F.

    1991-07-01

    The most important of the GaAs surfaces for technological applications are those found on the (100) orientation, which are usually prepared by molecular beam epitaxy (MBE). However, when MBE facilities are not available an alternative method of surface preparation is by simultaneous ion bombardment and annealing cycles (SIBA), which it is known to give good results on the (111) polar faces. On (100) surfaces this treatment produces the 1 × 6, 4 × 1, and c(8 × 2) Ga-rich surface reconstructions, which we have attained sequentially for decreasing As surface concentrations. The experimental As to Ga Auger ratios of the different structures have been associated with the results given by an Auger formalism which is able to predict the surface composition of the outermost bilayer. Our results for the different surface compositions are compared with all the data available in the literature for surfaces prepared by SIBA.

  4. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  5. Generation of picosecond pulses with a gain-switched GaAs surface-emitting laser

    SciTech Connect

    Karin, J.R.; Melcer, L.G.; Nagarajan, R.; Bowers, J.E.; Corzine, S.W.; Morton, P.A.; Geels, R.S.; Coldren, L.A. )

    1990-09-03

    Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large signal response agrees well with the measured data. The model predicts the minimum achievable pulse width and pulse delay for this device structure. Experimental results and calculated values indicate that very high modulation rates are possible with vertical-cavity surface-emitting lasers.

  6. Monolithic integration of waveguide structures with surface-micromachined polysilicon actuators

    SciTech Connect

    Smith, J.H.; Carson, R.F.; Sullivan, C.T.; McClellan, G.

    1996-03-01

    The integration of optical components with polysilicon surface micromechanical actuation mechanisms show significant promise for signal switching, fiber alignment, and optical sensing applications. Monolithically integrating the manufacturing process for waveguide structures with the processing of polysilicon actuators allows actuated waveguides to take advantage of the economy of silicon manufacturing. The optical and stress properties of the oxides and nitrides considered for the waveguide design along with design, fabrication, and testing details for the polysilicon actuators are presented.

  7. Direct Patterning of Organic Self-Assembled Monolayer (SAM) on GaAs Surfaces via Dip-Pen Nanolithography (DPN)

    NASA Astrophysics Data System (ADS)

    Xiong, Peng; Keiper, Timothy; Wang, Xiaolei; Zhao, Jianhua

    2015-03-01

    Hybrid structures of functional molecules and solid-state (SS) materials have attracted extensive interest in surface nanoscience and molecular electronics. The formation and micro/nano patterning of organic SAMs on SS surfaces are a key step in fabricating such devices. Here we report realization of high quality MHA SAMs on GaAs and direct formation of micro/nanoscale patterns of MHA SAM on the surface by micro-contact printing (μ CP) and DPN. The process begins with the preparation of an oxide-free surface of GaAs, for which we employed treatment by an ammonium polysulfide ((NH4)2 Sx) solution. The treatment strips native oxides from GaAs creating an atomic layer of sulfur covalently bonded to the fresh surface. Formation of high-quality SAMs of thiol molecules on GaAs then proceeds through exchange of the sulfur and the thiol terminal of the molecules. The effects of the sulfur-passivation and formation of MHA SAM on the treated surface were confirmed by XPS, HRTEM, and DPN. To the best of our knowledge, this is a first realization of direct DPN of nanoscale organic SAM on a semiconductor free of surface oxide. We further evidence the utility of the hybrid platform by demonstrating directed self-assembly of Au nanoparticles onto MHA/ODT SAM templates on GaAs.

  8. In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

    NASA Technical Reports Server (NTRS)

    Yao, Huade; Snyder, Paul G.

    1991-01-01

    A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

  9. Effect of Polishing Systems on Surface Roughness and Topography of Monolithic Zirconia.

    PubMed

    Goo, C L; Yap, Auj; Tan, Kbc; Fawzy, A S

    2016-01-01

    This study evaluated the effect of different chairside polishing systems on the surface roughness and topography of monolithic zirconia. Thirty-five monolithic zirconia specimens (Lava PLUS, 3M ESPE) were fabricated and divided into five groups of seven and polished with the following: Group 1 (WZ)-Dura white stone followed by Shofu zirconia polishing kit; Group 2 (SZ)-Shofu zirconia polishing kit; Group 3 (CE)-Ceramiste porcelain polishers; Group 4 (CM)-Ceramaster porcelain polishers; and Group 5 (KZ)-Komet ZR zirconia polishers. All specimens were ground with a fine-grit diamond bur prior to polishing procedures to simulate clinical finishing. Baseline and post-polishing profilometric readings were recorded and delta Ra values (difference in mean surface roughness before and after polishing) were computed and analyzed using one-way analysis of variance and Scheffe post hoc test (p<0.05). Representative scanning electron microscopy (SEM) images of the ground but unpolished and polished specimens were acquired. Delta Ra values ranged from 0.146 for CE to 0.400 for KZ. Delta Ra values for KZ, WZ, and SZ were significantly greater than for CE. Significant differences in delta Ra values were also observed between KZ and CM. The SEM images obtained were consistent with the profilometric findings. Diamond-impregnated polishing systems were more effective than silica carbide-impregnated ones in reducing the surface roughness of ground monolithic zirconia. PMID:26666390

  10. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning.

    PubMed

    Belz, Jürgen; Beyer, Andreas; Torunski, Torsten; Stolz, Wolfgang; Volz, Kerstin

    2016-04-01

    The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials. PMID:26855206

  11. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  12. High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

    NASA Astrophysics Data System (ADS)

    Groussin, Bernard; Pitard, Francois; Volluet, Gerard; Carriere, Claude

    1994-09-01

    This paper describes recent progress in the development of more advance laser diode pump source: 'Monolithic Surface Emitting Laser Diode' (MOSEL). In this structure, the linear bar arrays are epitaxially grown on an engraved substrate between etched deflection mirrors adjacent to the laser facets. The laser diode structure grown by MOCVD technique is a single quantum well graded index active region (SQW/GRINSCH). A specific process has been designed to have cleaved laser diode facets. Monolithic elements of 0.1 cm(superscript 2) have been designed and mounted. The quasi-CW operation gives over 100 W of optical power or a QCW power density of 1 KW/cm(superscript 2). A compact assembly of 10 similar elements gives an optical power of 1 KW QCW. CW operation have been also tested up to 150 W CW/cm(superscript 2).

  13. Monolithically integrated micro- and nanostructured glass surface with antiglare, antireflection, and superhydrophobic properties.

    PubMed

    Tulli, Domenico; Hart, Shandon D; Mazumder, Prantik; Carrilero, Albert; Tian, Lili; Koch, Karl W; Yongsunthon, Ruchirej; Piech, Garrett A; Pruneri, Valerio

    2014-07-23

    Hierarchical micro- and nanostructured surfaces have previously been made using a variety of materials and methods, including particle deposition, polymer molding, and the like. These surfaces have attracted a wide variety of interest for applications including reduced specular reflection and superhydrophobic surfaces. To the best of our knowledge, this paper reports the first monolithic, hierarchically structured glass surface that combines micro- and nanoscale surface features to simultaneously generate antiglare (AG), antireflection (AR), and superhydrophobic properties. The AG microstructure mechanically protects the AR nanostructure during wiping and smudging, while the uniform composition of the substrate and the micro- and nanostructured surface enables ion exchange through the surface, so that both the substrate and structured surface can be simultaneously chemically strengthened. PMID:24960031

  14. Wrinkled Graphene Monoliths as Superabsorbing Building Blocks for Superhydrophobic and Superhydrophilic Surfaces.

    PubMed

    Lv, Li-Bing; Cui, Tian-Lu; Zhang, Bing; Wang, Hong-Hui; Li, Xin-Hao; Chen, Jie-Sheng

    2015-12-01

    Superhydrophobic and superhydrophilic surfaces are of great interest because of a large range of applications, for example, as antifogging and self-cleaning coatings, as antibiofouling paints for boats, in metal refining, and for water-oil separation. An aqueous ink based on three-dimensional graphene monoliths (Gr) can be used for constructing both superhydrophobic and superhydrophilic surfaces on arbitrary substrates with different surficial structures from the meso- to the macroscale. The surface wettability of a Gr-coated surface mainly depends on which additional layers (air for a superhydrophobic surface and water for a superhydrophilic surface) are adsorbed on the surface of the graphene sheets. Switching a Gr-coated surface between being superhydrophobic and superhydrophilic can thus be easily achieved by drying and prewetting with ethanol. The Gr-based superhydrophobic membranes or films should have great potential as efficient separators for fast and gravity-driven oil-water separation. PMID:26440454

  15. Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

    SciTech Connect

    Schmidt, Christian B. Priyadarshi, Shekhar; Bieler, Mark; Tarasenko, Sergey A.

    2015-04-06

    We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which is the inverse spin Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields.

  16. Surface Science Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery

    SciTech Connect

    Shutthanandan, V.; Zhu, Zihua; Stutzman, Marcy L.; Hannon, Fay; Hernandez-Garcia, Carlos; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai; Hess, Wayne P.

    2012-06-12

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Several photocathode degradation processes are suspected, including defect formation by ion back bombardment, photochemistry of surface adsorbed species and irradiation-induced surface defect formation. To better understand the mechanisms of photocathode degradation, we have conducted surface and bulk analysis studies of two GaAs photocathodes removed from the FEL photoinjector after delivering electron beam for a few years. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF photoinjector were analyzed using Transmission Electron Microscopy (TEM) and SIMS. This analysis of photocathode degradation during nominal photoinjector operating conditions represents first steps towards developing robust new photocathode designs necessary for generating sub-micron emittance electron beams required for both fourth generation light sources and intense polarized CW electron beams for nuclear and high energy physics facilities.

  17. Effect of diameter and surface roughness on ultrasonic properties of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Dhawan, Punit Kumar; Wan, Meher; Verma, S. K.; Pandey, D. K.; Yadav, R. R.

    2015-02-01

    Second and third order elastic constants of GaAs Nanowires (NWs) are calculated using the many-body interaction potential model. The velocities of ultrasonic waves at different orientations of propagation with unique axis are evaluated using the second order elastic constants. The ultrasonic attenuation and thermal relaxation times of the single crystalline GaAs-NW are determined as a function of diameter and surface roughness by means of Mason theoretical approach using the thermal conductivity and higher order elastic constants. The diameter variation of ultrasonic attenuation and thermal relaxation exhibit second order polynomial function of diameter. It is also found that ultrasonic attenuation and thermal relaxation follow the exponential decay with the surface roughness for GaAs-NW due to reduction in thermal conductivity caused by dominance of surface asperities. Finally, the correlations among ultrasonic parameters, thermal conductivity, surface roughness, and diameter for GaAs-NWs are established leading towards potential applications.

  18. Glancing-angle ion enhanced surface diffusion on gaAs(001) during molecular beam epitaxy.

    PubMed

    DeLuca, P M; Ruthe, K C; Barnett, S A

    2001-01-01

    We describe the effects of glancing incidence 3-4 keV Ar ion bombardment on homoepitaxial growth on vicinal GaAs(001). The average adatom lifetime on surface terraces, measured during growth using specular ion scattering, decreased monotonically with increasing ion current density. The results indicated that surface diffusivity was increased by the ions. The ion beam also suppressed growth oscillations and decreased the film surface roughness. This indicates a change from two-dimensional island nucleation to step-flow growth due to increased adatom surface diffusivity. A simple model, involving direct momentum transfer from ions to adatoms, is shown to be consistent with the measured enhanced diffusion. PMID:11177806

  19. Change of the surface potential barrier of GaAs photocathode during two-step activation

    NASA Astrophysics Data System (ADS)

    Niu, Jun; Gao, Youtang; Qian, Yunsheng; Chang, Benkang

    2014-09-01

    High and low temperature activation experiments were carried out for a transmission-mode GaAs photocathode sample, and the activation photocurrent curves were recorded. The variety of the activation photocurrent curves between high and low temperatures was studied. By using fitting calculation, the surface potential barrier parameters of NEA photocathode after high and low temperature activations were obtained, respectively, and the change of the surface potential barriers between high and low -temperature activations is indicated. Besides, The NEA cathode surface after high-temperature activation and low temperature activation were analyzed respectively by using angle-dependent X-ray photoelectron spectroscopy (XPS). Above investigation results indicate that, with contrast to high-temperature activation, the thickness of surface potential barriers after low-temperature activation become thin and the vacuum level is reduced further. As a result, the cathode spectral sensitivity is improved remarkably.

  20. Surface stability and atomic-step-edge kinetics on a cleaved-edge-overgrown (110) GaAs surface

    SciTech Connect

    Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.

    2007-04-10

    We investigate the evolution of surface smoothness and atomic step-edge patterns on 6-nm (110) GaAs surfaces grown by cleaved-edge overgrowth with molecular beam epitaxy (MBE) and subsequent in situ annealing at elevated substrate temperatures ranging from 590 to 650 deg. C. As the annealing temperature was increased, island structures of {mu}m scale formed on the annealed surfaces decreased in size and almost disappeared at 630 deg. C while pit structures and underlying monolayer terraces increased in size, which indicate that the surface migration of atoms are enhanced and flatten the (110) surface during annealing. At higher annealing temperatures above 630 deg. C, new triangular-shaped pit structures appeared on the surface, which disturbs atomic-scale smoothing of the (110) surfaces.

  1. Bioinspired monolithic polymer microsphere arrays as generically anti-adhesive surfaces.

    PubMed

    Eichler-Volf, Anna; Kovalev, Alexander; Wedeking, Tim; Gorb, Elena V; Xue, Longjian; You, Changjiang; Piehler, Jacob; Gorb, Stanislav N; Steinhart, Martin

    2016-01-01

    Bioinspired surface topographies showing generic anti-adhesive behaviour by minimization of the real contact area not only with rigid, but also with soft and compliant counterpart surfaces recently attracted increasing attention. In the present study, we show that such generic anti-adhesive surfaces, which moreover demonstrate anti-fouling behaviour, can be produced on a large scale by a simple double replication of monolayers of microspheres with diameters of a few 10 μm. Thus, we obtained mechanically stable monolithic arrays of microspheres tightly connected to a support of the same material. Adhesion of these microsphere arrays to sticky and compliant counterpart surfaces was one order of magnitude weaker than that of flat control samples of the same material. The generation of nanorod arrays with nanorod diameters of a few 100 nm as the second hierarchical structure level on monolithic microsphere arrays did not significantly affect the adhesion force. The experimental data on anti-adhesive behaviour were modelled using a modified Johnson-Kendall-Roberts theoretical approach that also provided general design criteria for topographic adhesion minimization to sticky counterpart surfaces. PMID:26989086

  2. Ab initio study of atomic disorder on As-rich GaAs(111)A surface

    NASA Astrophysics Data System (ADS)

    Romanyuk, O.; Mutombo, P.; Grosse, F.

    2015-11-01

    Mechanisms for the appearance of disorder on the As-rich GaAs(111)A surface were investigated employing density functional theory (DFT). Focus was given to the As trimer interactions by considering different surface symmetries and rest site occupations. The (2 × 2) and the c(4 × 2) structure models with As trimer and an As rest site were found the most energetically stable under the As-rich experimental conditions at T = 0 K. Low interactions between neighboring As trimers causes disorder in thermodynamic equilibrium at finite temperatures. A careful analysis of the configurational entropy contributions including the different statistics was carried out. The experimentally observed As-rich (2 × 2) structure was confirmed to be kinetically stabilized. The stabilization mechanism is discussed with respect to the As trimer migration on the surface, which is limited by a large diffusion barrier through the As rest sites.

  3. Surface structure transitions on (0 0 1) GaAs during MBE

    NASA Astrophysics Data System (ADS)

    Preobrazhenskii, V. V.; Putyato, M. A.; Pchelyakov, O. P.; Semyagin, B. R.

    1999-05-01

    Experimental phase diagrams of GaAs (0 0 1) surface were obtained by direct measuring of the As 4 flux and the substrate temperature. The infringement of the epitaxial growth was found to occur at the ratio of As 4 to Ga fluxes less than or equal to 0.25. Hence, the As 4 incorporation coefficient is close to unity during MBE. A diffusion model was suggested to describe positions of boundaries between surface structures (SS) in the phase diagrams. Dependencies of temperatures of SS transitions on the rate of surface heating in the absence of incident fluxes were obtained. The transition temperatures were discovered to tend to constant values as the heating rate increased. A model underlying this dependence was developed.

  4. Structure of GaAs(001) surfaces: The role of electrostatic interactions

    SciTech Connect

    Northrup, J.E. ); Froyen, S. )

    1994-07-15

    We report first-principles total-energy calculations for the GaAs(001) surface. Our results indicate that the 2[times]4 reconstruction corresponds to the [beta]2(2[times]4) structure, which exhibits two As dimers in the top layer and a third As dimer in the third layer. This structure has a lower surface energy than the [beta](2[times]4) model, which has three As dimers in the top layer. We also find that a model recently proposed by Skala [ital et] [ital al]. [Phys. Rev. B [bold 48], 9138 (1993)] for the structure of the Ga-rich 4[times]2 phase is energetically unfavorable. From our results we conclude that electrostatic interactions between the charged building blocks of polar semiconductor surfaces play an important role in determining the equilibrium structure. We introduce a simple model for estimating these interactions.

  5. Surface core-level shifts of GaAs(100)(2×4) from first principles

    NASA Astrophysics Data System (ADS)

    Punkkinen, M. P. J.; Laukkanen, P.; Kokko, K.; Ropo, M.; Ahola-Tuomi, M.; Väyrynen, I. J.; Komsa, H.-P.; Rantala, T. T.; Pessa, M.; Kuzmin, M.; Vitos, L.; Kollár, J.; Johansson, B.

    2007-09-01

    First-principles calculations show that measured surface core-level shifts (SCLSs) of the GaAs(100)(2×4) surfaces can be described within the initial state effects. The calculated As3d and Ga3d SCLSs for the β2 and α2 reconstructions of the GaAs(100)(2×4) surfaces are in reasonable agreement with recent measurements. In particular, the results confirm that both the lower and the higher binding energy SCLSs, relative to the bulk emission in the As3d photoelectron spectra, are intrinsic properties of the GaAs(100)(2×4) surfaces. The most positive and most negative As shifts are attributed to the third layer As atoms, which differs from the previous intuitive suggestions. In general, calculations show that significant SCLSs arise from deep layers, and that there are more than two SCLSs. Our previously measured As3d spectra are fitted afresh using the calculated SCLSs. The intensity ratios of the SCLSs, obtained from the fits, show that as the heating temperature of the GaAs(100)(2×4) surface is increased gradually, the area of the α2 reconstruction increases on the surface, but the β2 phase remains within the whole temperature range, in agreement with previous experimental findings. Our results show that the combination of the experimental and theoretical results is a prerequisite for the accurate analysis of the SCLSs of the complex reconstructed surfaces.

  6. High Efficiency, Surface Stable Photocatalytic H2 evolution on TiO2 -passivated GaAs

    NASA Astrophysics Data System (ADS)

    Qiu, Jing; Zeng, Guangtong; Cronin, Stephen B.; Stephen B. Cronin nano research lab Team

    2015-03-01

    III-V compounds, such as GaAs, are used widely for high efficiency photovoltaic solar energy conversion. The electrochemical instability of these materials, however, has limited their applicability in photocatalysis. Here, we demonstrate that thin (1-5nm) films of TiO2 deposited by atomic layer deposition on planar GaAs provide electrochemical stability and substantial improvements in the efficiency of photocatalytic water splitting. The TiO2-passivated GaAs shows no photochemical degradation or corrosion after 48 hours, while bare GaAs shows substantial degradation after just 15 minutes. This TiO2 passivation layer produces a 32-fold enhancement over bare GaAs, with an overall photoconversion efficiency of 11%. We find that just 1nm of TiO2 produces the optimum conditions for photocatalysis. This is not thick enough to form a continuous film, and instead produces small regions of non-stiochiometric TiOx, which is rich with Ti3+ surface states that are known to be catalytically active sites. These charged sites stabilize, or lower the energy of, OH- intermediate species in this reaction, thus lowering the reaction barrier height. X-ray photoemission spectroscopy and photoluminescence spectroscopy provide further evidence for these Ti3+ surface states. ARO Award No. W911NF-14-1-0228 & NSF Award No. CBET-0846725, XPS data were collected at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology.

  7. On-column enrichment and surface-enhanced Raman scattering detection in nanoparticles functionalized porous capillary monolith.

    PubMed

    Jiang, Qian; Zeng, Tian; Yang, Song; Chen, Qian; Chen, Lei; Ye, Yong; Zhou, Ji; Xu, Shuping

    2015-04-15

    A monolithic column functionalized with gold nanoparticles (GNPs) was designed to provide ultrasensitive detection with surface-enhanced Raman scattering (SERS). The monolithic column based on poly (glycidyl methacrylate-co-ethylene dimethacrylate) (GMA-co-EDMA) was served as the enrichment sorbent to concentrate GNPs and targets. We found that 60 nm GNPs-functionalized monolithic columns demonstrated the best SERS enhancement, and the lowest detectable concentration for PATP and CV could be achieved at 10(-7) and 10(-11) M, respectively. Moreover, the columns exhibit a good reproducibility in both spot-to-spot (∼10%) and batch-to-batch (∼15%). The SERS monolithic column with a high sensitivity and reproducibility has a great potential in the field-based rapid detection of targets in complex real-world samples. PMID:25681809

  8. Porous polymer monoliths with large surface area and functional groups prepared via copolymerization of protected functional monomers and hypercrosslinking.

    PubMed

    Maya, Fernando; Svec, Frantisek

    2013-11-22

    A new approach to the preparation of porous polymer monoliths possessing both large surface area and functional groups has been developed. The chloromethyl groups of poly(styrene-co-4-acetoxystyrene-co-vinylbenzyl chloride-co-divinylbenzene) monolith enable post-polymerization hypercrosslinking catalyzed by ferric chloride in dichloroethane leading to a multitude of small pores thus enhancing the surface area. The acetoxy functionalities are easily deprotected using hydrazine to produce polar phenolic hydroxyl groups, which would be difficult to obtain by direct copolymerization of hydroxyl-containing monomers. The hypercrosslinking and deprotection reactions as well as their sequence were studied in detail with bulk polymer monoliths containing up to 50% 4-acetoxystyrene and its progress monitored by infrared spectrometry and nitrogen adsorption/desorption measurements. No significant difference was found for both possible successions. All monoliths were also prepared in a capillary column format, then deprotected and hypercrosslinked. Capillary columns were tested for the separation of small molecules using reversed phase and normal phase chromatographic modes. For polymer monoliths containing 50% deprotected 4-acetoxystyrene, column efficiencies of 40,000 plates/m for benzene in reversed phase mode and 31,800 plates/m for nitrobenzene in normal phase mode, were obtained. The percentage of hydroxyl groups in the monoliths enables modulation of polarity of the stationary phase. They also represent functionalities that are potentially suitable for further modifications and formation of new types of stationary phases for liquid chromatography. PMID:23910448

  9. Crystal bending by surface damaging in mosaic GaAs crystals for the LAUE project

    NASA Astrophysics Data System (ADS)

    Buffagni, E.; Bonnini, E.; Zappettini, A.; Guadalupi, G. M.; Rossi, F.; Ferrari, C.

    2013-09-01

    Curved crystals used as optical elements of a Laue lens for hard x- and gamma-ray astronomy have a larger diffraction efficiency with respect to perfect flat crystals. In this work we show how to achieve the bending of the crystals by a controlled surface damaging which introduces defects in a superficial layer of few tens micrometers in thickness undergoing a highly compressive strain. Several silicon, gallium arsenide and germanium wafer crystals have been treated. The local and mean curvature radii of each sample have been determined by means of high resolution x-ray diffraction measurements in Bragg condition at low energy (8 keV). (100) oriented silicon and (111) oriented germanium samples showed spherical curvatures, whereas (100) oriented GaAs treated samples evidenced an elliptical curvature with major axes corresponding to the <011< crystallographic directions. Curvature radii between 3 and 70 m were easily obtained in wafers with thicknesses up to 2 mm. Several 3x1x0.2 cm3 GaAs crystals (100) oriented with a radius of curvature of 40 m were prepared for the Laue Lens. Using a x-ray tube set at a distance of 20 m from the crystal for the first time the focusing of the (022) diffracted beam at a distance of 20 m was observed.

  10. Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers

    SciTech Connect

    Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.

    2007-05-15

    Temperature and surface-coverage dependence of the evolution of surface morphology during growth-interrupt in situ annealing on GaAs epitaxial layers grown on the singular (110) cleaved edges by the cleaved-edge overgrowth method with molecular-beam epitaxy has been studied by means of atomic force microscopy. Annealing at substrate temperatures below 630 degree sign C produced atomically flat surfaces with characteristic islands or pits, depending on the surface coverage. The atomic flatness of the surfaces is enhanced with increasing annealing temperature owing to the enhanced adatom migration. At a higher annealing temperature of about 650 degree sign C, however, 2-monolayer-deep triangular pits with well-defined step edges due to Ga-atom desorption from the crystal appeared in the atomically flat surface. The growth-interrupt annealing temperature optimal for the formation of atomically flat GaAs(110) surfaces is therefore about 630 degree sign C.

  11. Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Wu, Y.

    1988-01-01

    A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

  12. Nano-pits on GaAs (1 0 0) surface: Preferential sputtering and diffusion

    NASA Astrophysics Data System (ADS)

    Kumar, Tanuj; Panchal, Vandana; Kumar, Ashish; Kanjilal, D.

    2016-07-01

    Self organized nano-structure array on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. Therefore, the control over their dimensions is gaining scientific interest in last couple of decades. In this work, fabrication of pits of nano-dimensions is carried out on the GaAs (1 0 0) surface using 50 keV Ar+ at normal incidence. Variation in fluence from 3 × 1017 ions/cm2 to 5 × 1018 ions/cm2 does not make a remarkable variation in the dimension of pits such as size and depth, which is confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). However the simultaneous dots formation is observed along with the pits at higher fluences. Average size of pits is found to be of 22 nm with depth of 1-5 nm for the used fluences. The importance of preferential sputtering of 'As' as compared to 'Ga' is estimated using energy dispersive X-ray analysis (EDX). The observed alteration in near surface composition shows the Ga enrichment of surface, which is not being much affected by variation in fluence. The growth evolution of pits and dots for the used experimental conditions is explained on the basis of ion beam induced preferential sputtering and surface diffusion.

  13. Electronic structure of Ga1- x Al x As nanostructures grown on the GaAs surface by ion implantation

    NASA Astrophysics Data System (ADS)

    Donaev, S. B.; Umirzakov, B. E.; Tashmukhamedova, D. A.

    2015-10-01

    The surface morphology and electronic properties of nanocrystalline phases and 2-7-nm-thick Ga1- x Al x As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E g of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size equals 2.8-2.9 eV.

  14. Surface chemistry of new As precursors for MOVPE and MOMBE: phenylarsine and tertiarybutylarsine on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Kaul, P.; Schütze, A.; Kohl, D.; Brauers, A.; Weyers, M.

    1992-10-01

    Surface reactions of PhAs and tBAs on unoxidized and thermally oxidized GaAs(100) were studied in an UHV chamber using a differentially pumped quadrupole mass spectrometer and a molecular beam nozzle. A special sample holder allowed periodic switching between an unoxidized and an oxidized surface to observe small differences in reactivity. The following assumptions are compatible with the experimental results: Adsorption of PhAs or tBAs on GaAs(100) followed by rupture of the As-H bonds is the first step. Most of the organometallic radicals desorb from the surface, a fraction decomposes further by rupture of the As-C bond. The organic radicals react with the surface hydrogen and desorb as benzene and butane or butene, respectively. Low values of the activation energies ( ≤ 0.4 eV) for the different reaction steps suggest a diffusion of PhAs or tBAs on the surface as the rate limiting step for the overall reaction. A comparison of oxidized and unoxidized surfaces exposed to a constant gas flux of PhAs or tBAs revealed a reduced reactivity on the oxidized surface. Thermodesorption experiments with oxidized GaAs(100) surfaces showed that the desorption temperature of GA 2O decreased from 862 K without tBAs to 835 K in a tBAs flux. During this annealing process a reaction between the surface oxide and organic radicals from the tBAs decomposition seems to form a highly stable contamination layer which was observed by X-ray photoelectron spectroscopy. This contamination of the surface can be avoided by annealing in UHV without any As-species present and monitoring the Ga 2O flux from the surface with a mass spectrometer because non-stoichiometric evaporation of GaAs occurs only after desorption of the oxide.

  15. Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions

    NASA Astrophysics Data System (ADS)

    Bischoff, L.; Böttger, R.; Heinig, K.-H.; Facsko, S.; Pilz, W.

    2014-08-01

    Self-organization of surface patterns on GaAs under irradiation with heavy polyatomic Au ions has been observed. The patterns depend on the ion mass, and the substrate temperature as well as the incidence angle of the ions. At room temperature, under normal incidence the surface remains flat, whereas above 200 °C nanodroplets of Ga appear after irradiation with monatomic, biatomic as well as triatomic Au ions of kinetic energies in the range of 10-30 keV per atom. In the intermediate temperature range of 100-200 °C meander- and dot-like patterns form, which are not related to Ga excess. Under oblique ion incidence up to 45° from the surface normal, at room temperature the surface remains flat for mon- and polyatomic Au ions. For bi- and triatomic ions in the range of 60° ≤ α ≤ 70° ripple patterns have been found, which become shingle-like for α ≥ 80°, whereas the surface remains flat for monatomic ions.

  16. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  17. GaAs nanopillar-array solar cells employing in situ surface passivation

    PubMed Central

    Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

    2013-01-01

    Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

  18. Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 1 1)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoshida, Hiroatsu; Ikejiri, Keitaro; Sato, Takuya; Hara, Shinjiroh; Hiruma, Kenji; Motohisa, Junichi; Fukui, Takashi

    2009-12-01

    We analyzed twin defects in GaAs nanowires as thin as 100-400 nm and tetrahedral structures as small as 1.0 μm, which were selectively grown by metal organic vapour-phase epitaxy (MOVPE) within a SiO 2 mask window fabricated on GaAs(1 1 1)B substrates. In particular, we focused on the correlation between the twins and GaAs(1 1 1)B surface reconstructions. We confirmed that the shape of GaAs crystals selectively grown on GaAs(1 1 1)B substrates changed from hexagonal nanowires to truncated tetrahedra when the size of the mask opening was increased from 100 to 1000 nm under the same growth conditions. The shape also changed from tetrahedral to hexagonal with decreasing growth temperature ( Tg: 600-800 °C) and with increasing arsine (AsH 3) partial pressure (1.0×10 -4 to 5.0×10 -4 atm). Rotational twins around the <1 1 1> axis were found in the tetrahedra by transmission electron microscopy (TEM) and scanning electron microscopy observations. In addition, the probability of twins developing in the tetrahedra increased with decreasing mask opening size, with decreasing Tg, and with increasing AsH 3 partial pressure. The TEM study also revealed the existence of a high density of rotational twins in the nanowires, and their density increased with decreasing nanowire diameter, suggesting a correlation between the twins and the shape/size of GaAs crystals. These findings were semi-quantitatively compared with a reported phase diagram for GaAs(1 1 1)B surface reconstruction. By analyzing the relationship between twin development and MOVPE conditions, we found that the shape change of GaAs crystals on GaAs(1 1 1)B and the formation of twins coincided well with the transition of GaAs surface reconstruction between the (2×2) and (√19×√19) structures.

  19. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    SciTech Connect

    García Núñez, C. Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J.; Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P.

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  20. Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface

    SciTech Connect

    Liu Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.; Pease, R.F.W.

    2004-08-30

    The energy distribution curves (EDCs) of photoelectrons emitted from the GaN(0001) negative electron affinity (NEA) surfaces are investigated along with GaAs(100) NEA surfaces. These experiments are performed at room temperature using 3.82 eV laser excitation for GaN and 1.96 eV laser excitation for GaAs. We find the main contribution to the total emitted current is the electrons that have lost an average energy of 310 meV and 140 meV, respectively, in the bandbending region (BBR). We propose that the origin of the energy loss as the electrons exit the solid is due to intervalley phonon scattering in the BBR (scattering of {gamma} electrons into the L-M valleys for GaN and L valley for GaAs). EDC studies on semiconductor NEA surfaces enable us to investigate the semiconductor electron transport property in the high-field region, which is established internally by the bandbending voltage at the surface.

  1. Monte Carlo analysis of a monolithic interconnected module with a back surface reflector

    SciTech Connect

    Ballinger, C.T.; Charache, G.W.; Murray, C.S.

    1998-10-01

    Recently, the photon Monte Carlo code, RACER-X, was modified to include wave-length dependent absorption coefficients and indices of refraction. This work was done in an effort to increase the code`s capabilities to be more applicable to a wider range of problems. These new features make RACER-X useful for analyzing devices like monolithic interconnected modules (MIMs) which have etched surface features and incorporates a back surface reflector (BSR) for spectral control. A series of calculations were performed on various MIM structures to determine the impact that surface features and component reflectivities have on spectral utilization. The traditional concern of cavity photonics is replaced with intra-cell photonics in the MIM design. Like the cavity photonic problems previously discussed, small changes in optical properties and/or geometry can lead to large changes in spectral utilization. The calculations show that seemingly innocuous surface features (e.g., trenches and grid lines) can significantly reduce the spectral utilization due to the non-normal incident photon flux. Photons that enter the device through a trench edge are refracted onto a trajectory where they will not escape. This leads to a reduction in the number of reflected below bandgap photons that return to the radiator and reduce the spectral utilization. In addition, trenches expose a lateral conduction layer in this particular series of calculations which increase the absorption of above bandgap photons in inactive material.

  2. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  3. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  4. Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

    1993-01-01

    A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

  5. Method of linear combination of structural motifs for surface and step energy calculations: Application to GaAs(001)

    SciTech Connect

    Zhang, S.B.; Zunger, A.

    1996-01-01

    First-principles calculations of atomic structure and formation energies of semiconductor surfaces and surface steps are often complicated by complex structural patterns. We suggest here a simpler, algebraic (not differential) approach that is based on two observations distilled from previous first-principles calculations. {ital First}, a relatively large collection of equilibrium structures of surfaces and bulk point defects can be built from a limited number of recurring local {open_quote}{open_quote}structural motifs,{close_quote}{close_quote} including for GaAs tetrahedrally bonded Ga and As and miscoordinated atoms such as threefold-coordinated pyramidal As. {ital Second}, the structure is such that band-gap levels are emptied, resulting in charged miscoordinated atoms. These charges compensate each other. We thus express the total energy of a given surface as a sum of the energies of the motifs, and an electrostatic term representing the Madelung energy of point charges. The motif energies are derived by fitting them to a set of pseudopotential total-energy calculations for {ital flat} GaAs(001) surfaces and for point defects in {ital bulk} GaAs. This set of parameters is shown to suffice to reproduce the energies of {ital other} (001) surfaces, calculated using the same pseudopotential approach. Application of the {open_quote}{open_quote}linear combination of structural motif{close_quote}{close_quote} (LCSM) method to flat GaAs(001) surfaces reveals the following: (i) The observed {ital h}(2{times}3) surface may be a disordered {ital c}(8{times}6) surface. (ii) The observed (2{times}6) surface is a metastable surface, only 0.03 eV/(1{times}1) higher than the {alpha}(2{times}4) surface having the same surface coverage. (iii) We confirm the recent suggestion by Hashizume {ital et} {ital al}. that the observed {gamma}(2{times}4) phase of the (2{times}4) surface is a mixture of the {beta}2(2{times}4) and {ital c}(4{times}4) surfaces. (Abstract Truncated)

  6. Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces

    NASA Astrophysics Data System (ADS)

    Xu, Xingliang; Wu, Jiang; Wang, Xiaodong; Zhang, Mingliang; Li, Juntao; Shi, Zhigui; Li, Handong; Zhou, Zhihua; Ji, Haining; Niu, Xiaobin; Wang, Zhiming M.

    2016-01-01

    Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy.

  7. Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces.

    PubMed

    Xu, Xingliang; Wu, Jiang; Wang, Xiaodong; Zhang, Mingliang; Li, Juntao; Shi, Zhigui; Li, Handong; Zhou, Zhihua; Ji, Haining; Niu, Xiaobin; Wang, Zhiming M

    2016-12-01

    Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy. PMID:26815607

  8. XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

    NASA Astrophysics Data System (ADS)

    Kumar, Praveen; Kumar, Mahesh; Govind; Mehta, B. R.; Shivaprasad, S. M.

    2009-10-01

    For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar + ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 × 10 13 ions/cm 2 to 1 × 10 18 ions/cm 2. Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N 2+ ions and 7.2 × 10 17 ions/cm 2 are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar + ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for growing low defect GaN epitaxial overlayers.

  9. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-01

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature.

  10. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    NASA Astrophysics Data System (ADS)

    Kim, Juho; Hwang, Jeongwoo; Song, Kwangsun; Kim, Namyun; Shin, Jae Cheol; Lee, Jongho

    2016-06-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  11. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    PubMed

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature. PMID:27263630

  12. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

    SciTech Connect

    Samsonenko, Yu. B. Cirlin, G. E.; Khrebtov, A. I.; Bouravleuv, A. D.; Polyakov, N. K.; Ulin, V. P.; Dubrovskii, V. G.; Werner, P.

    2011-04-15

    The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630 Degree-Sign C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610 Degree-Sign C. An increase in the temperature to 640 Degree-Sign C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.

  13. High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Turco, F. S.; Sandroff, C. J.; Hwang, D. M.; Ravi, T. S.; Tamargo, M. C.

    1990-08-01

    It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.

  14. Nitrogen substitutions in GaAs(001) surfaces: Density-functional supercell calculations of the surface stability

    NASA Astrophysics Data System (ADS)

    Jenichen, Arndt; Engler, Cornelia; Leibiger, Gunnar; Gottschalch, Volker

    2005-11-01

    The structures and energies of various probable reconstruction patterns of the GaAs(001) surface with restricted nitrogen substitution on arsenic positions are calculated using periodic supercells and the density-functional method. In dependence on chemical potentials of arsenic and nitrogen the most stable structures and compositions of the surface are obtained: Under extreme As-rich conditions the N-free c(4 × 4) reconstruction is the preferred arrangement. Under Ga-rich conditions the (4 × 2) reconstruction builds in variously high N-substituted structures (especially parallel coupled (GaN)n chains), which can lead to a GaN phase (phase separation). In the transition region between the Ga- and As-rich limits the 2(2 × 4) but also the 2(2 × 4) reconstruction form structures with restricted nitrogen substitution. The high stability of restricted substitutions predestinates the region between the Ga- and As-rich conditions for the growth of GaAsN alloys. The blueshift of the band gap during the annealing of the grown bulk can be explained by the transformation of the grown (GaN)n chains, which are also formed in this region (in the (2 × 4) reconstruction), to the thermodynamically most stable bulk structures.

  15. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Nevedomskiy, V. N.; Bugrov, V. E.

    2015-11-15

    Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

  16. Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces

    NASA Astrophysics Data System (ADS)

    Tereshchenko, O. E.; Alperovich, V. L.; Terekhov, A. S.

    2006-02-01

    The (1 1 1)A and (1 1 1)B surfaces of GaAs chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). To avoid uncontrolled contamination, chemical treatment and sample transfer into UHV were performed under pure nitrogen atmosphere. The HCl-iPA treatment removes gallium and arsenic oxides, with about 0.5-3 ML of elemental arsenic being left on the surface, depending on the crystallographic orientation. With the increase of the annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1) and (2 × 2) on the (1 1 1)A surface and (1 × 1), (2 × 2), (1 × 1), (3 × 3), (√19 × √19) on the (1 1 1)B surface. These sequences of reconstructions correspond to the decrease of surface As concentration. The structural properties of chemically prepared GaAs(1 1 1) surfaces were found to be similar to those obtained by decapping of As-capped epitaxial layers.

  17. Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Sato, Michio; Weyers, Markus

    1991-11-01

    To determine the mechanism of surface reactions during metalorganic chemical vapor deposition, we perform mass spectrometric studies of the products desorbed from a GaAs surface upon pulsed supply of the reactants. We find that the surface after trimethylgallium (TMG) exposure is terminated by CH3 and that the desorption of the CH3 from the surface is activated by the presence of As. The adsorption of triethylgallium (TEG) is inhibited on a CH3-terminated surface whereas TEG is decomposed both on As-rich and on Ga-rich surfaces. The effect of CH3 termination is highlighted by the complete inhibition of triethylaluminum decomposition when it is introduced together with TMG.

  18. Direct electron beam writing of gallium oxide on GaAs(111) As surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Sacedón, J. L.; Soria, F.

    1984-07-01

    In this letter we show the possibility of a direct electron beam writing on GaAs (111) As by electron stimulated oxidation. An estimate of the writing velocity is also given. The analysis of the profiles of the oxide spots by Auger spectroscopy indicates the stability of the gallium oxide formed, and the post-oxidation formation of an As-rich interface.

  19. Polymethacrylate monolithic columns for hydrophilic interaction liquid chromatography prepared using a secondary surface polymerization.

    PubMed

    Currivan, Sinéad; Macak, Jan M; Jandera, Pavel

    2015-07-10

    Zwitterionic methacrylate based polymeric monolithic columns were prepared in two-step polymerizations, with reduced polymerization times. Characteristic properties such as hydrodynamic permeability, porosity, retention factors, and pore size distribution charts were used for column evaluation. A scaffold column was fabricated by polymerization of poly(lauryl methacrylate-co-tetraethyleneglycol dimethacrylate) and was used without further modification as a support for a poly(N,N-dimethyl-N-methacryloxyethyl-N-(3-sulfopropyl)ammonium betaine-co-bisphenol A glycerolate dimethacrylate) second monolith layer with zwitterionic functionality, for HILIC separations. An additional internal structure was formed by the second monolithic layer. The fabrication procedure was reproducible with RSD<5%. Field emission scanning electron microscopy has also been used to investigate column pore morphology, using a novel technique where the polymeric material is imaged directly, without coverage with a conducting film or particles. The new polar monolithic columns were used for HILIC separations of phenolic acids, flavones, nucleosides, and bases of nucleic acids, with similar efficiencies but different selectivities for zwitterionic methacrylate monolithic columns recently prepared by single step polymerization. PMID:26022313

  20. INSTRUMENTS AND METHODS OF INVESTIGATION: Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bakhtizin, Raouf Z.; Hashizume, T.; Xue, Qi-Kun; Sakurai, Toshio

    1997-11-01

    A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2×4 - α, β, γ and c(4×4) phases are examined in detail. High-resolution STM images indicate that 2×4 - α, β, and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2×4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.

  1. Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces

    SciTech Connect

    Nemcsics, Akos; Takacs, Jenoe

    2011-01-15

    This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation.

  2. Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

    SciTech Connect

    Yang, Y.J.; Dziura, T.G.; Wang, S.C. ); Hsin, W.; Wang, S. Electronics Research Laboratory, University of California, Berkeley, California 94720 )

    1990-05-07

    We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

  3. Laser-driven growth of silver nanoplates on p-Type GaAs substrates and their surface-enhanced raman scattering activity.

    SciTech Connect

    Sun, Y.; Pelton, M.

    2009-03-20

    Contact between aqueous solutions of silver nitrate (AgNO{sub 3}) and pristine surfaces of p-type gallium arsenide (GaAs) wafers results in essentially no reaction at room temperature and in the dark. The galvanic reactions between the GaAs wafers and AgNO{sub 3} can be triggered under illumination of laser beams with power densities higher than a critical value ({approx}15 mW/cm{sup 2} for a 630 nm laser), resulting in the growth of silver (Ag) nanoplates on the GaAs surface. The density and dimensions (including both thickness and edge length) of the resulting nanoplates can be readily tuned by controlling the growth time and laser power density. The as-grown Ag nanoplates on the substrates significantly enhance Raman signals of interesting molecules and serve as a new class of promising surface-enhanced Raman scattering substrates for sensitive chemical detection.

  4. On the use of a O 2:SF 6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

    NASA Astrophysics Data System (ADS)

    Desplats, O.; Gallo, P.; Doucet, J. B.; Monier, G.; Bideux, L.; Jalabert, L.; Arnoult, A.; Lacoste, G.; Armand, C.; Voillot, F.; Fontaine, C.

    2009-01-01

    Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O 2SF 6 microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O 2SF 6 plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer-epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.

  5. Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 × 4 surface

    NASA Astrophysics Data System (ADS)

    Ozeki, M.; Iwasa, Y.; Shimizu, Y.

    2007-04-01

    Adsorption process of methylchloride (CH 3Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH 3Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH 3Cl exposed surface. They were largely observed at the "B-type" step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH 3Cl molecules without any dissociation. The adsorption mechanism of CH 3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.

  6. XPS study of the O 2/SF 6 microwave plasma oxidation of (0 0 1) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Monier, G.; Bideux, L.; Desplats, O.; Fontaine, C.; Robert-Goumet, C.; Gruzza, B.

    2009-10-01

    O 2SF 6 plasma effects on processed GaAs surfaces have been investigated. The influence of plasma parameters such as composition, power and exposure time has been studied. The microwave plasma treatment efficiency has been studied by surface depth profiling (cycles consisting of XPS measurements followed by a slight etching) coupled with an original modelling calculation. We have pointed out that SF 6 addition in plasma increases the oxidative rule of oxygen by increasing the total oxide thickness and that the quantity of the different oxidative and passivating species does not limit the oxidative mechanism, in the O 2:SF 6 ratio range 80:20 to 40:60. The increase in the plasma power leads to a change in the composition of the outer region of the oxide layer with an increase in the gallium content on the surface, and to an increase in the total oxide layer. The exposure time to the plasma increases also these two phenomena.

  7. Monolithic cascade-type solar cells

    NASA Technical Reports Server (NTRS)

    Yamamoto, S.; Shibukawa, A.; Yamaguchi, M.

    1985-01-01

    Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

  8. Investigation of ultrafast photothermal surface expansion and diffusivity in GaAs via laser-induced dynamic gratings

    SciTech Connect

    Pennington, D.M.

    1992-04-01

    This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, D{sub S}. By varying the fringe spacing of the grating, this technique has the potential to separate the signal contributions to the expansion of the lattice in the perpendicular and parallel directions. In the data presented here a large fringe spacing was used, thus the dominant contribution to the rising edge of the signal was expansion perpendicular to the surface. Comparison of he results with a straightforward thermal model yields good agreement over a range of temperatures (20--300{degrees}K). Values for D{sub S} in GaAs were measured and found to be in reasonable agreement with bulk values above 50{degrees}K. Below 50{degrees}K, D{sub S} were determined to be up to an order of magnitude slower than the bulk diffusivity due to increased phonon boundary scattering. The applicability and advantages of the TG technique for studying photothermal and photoacoustic phenomena are discussed.

  9. Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

    SciTech Connect

    Liu, Y. C.; Hung, H. Y.; Kwo, J. E-mail: raynien@phys.nthu.edu.tw; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M. E-mail: raynien@phys.nthu.edu.tw; Tseng, S. C.; Hsu, C. H. E-mail: raynien@phys.nthu.edu.tw; Chang, M. T.; Lo, S. C.

    2015-09-21

    Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

  10. Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers

    SciTech Connect

    Zhuravlev, A. G.; Savchenko, M. L.; Paulish, A. G.; Alperovich, V. L.; Scheibler, H. E.; Jaroshevich, A. S.

    2013-12-04

    The dosage dependences of surface band bending and effective electron affinity under cesium deposition on the Ga-rich GaAs(001) surface, along with the relaxation of these electronic properties after switching off the Cs source are experimentally studied by means of modified photoreflectance spectroscopy and photoemission quantum yield spectroscopy. At small Cs coverages, below half of a monolayer, additional features in the dosage dependence and subsequent downward relaxation of the photoemission current are determined by the variations of band bending. At coverages above half of a monolayer the upward relaxation of the photocurrent is caused supposedly by the decrease of the electron affinity due to restructuring in the nonequilibrium cesium overlayer.

  11. Formation of super'' As-rich GaAs(100) surfaces by high temperature exposure to arsine

    SciTech Connect

    Banse, B.A.; Creighton, J.R. )

    1992-02-17

    We report that arsine exposures between 100 and 350 {degree}C will produce super'' As-rich surfaces (arsenic coverages of up to {similar to}1.7 monolayers (ML, where 1 ML=6.26{times}10{sup 14} atoms cm{sup {minus}2})) of GaAs(100) that exhibit a {ital c}(4{times}4) low energy electron diffraction pattern. Temperature programmed desorption studies show that after AsD{sub 3} exposures of up to 2.6{times}10{sup 6} L (1 L=1{times}10{sup {minus}6} Torr s) to the Ga-stabilized surface, three excess As desorption speaks are observed with maxima at 440, 480, and 570 {degree}C. As{sub 4} desorption is detected from the lowest temperature state, while the other states desorb primarily as As{sub 2}. The significance of these results for the understanding of the atomic layer epitaxy process is addressed.

  12. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  13. Accelerated colorimetric immunosensing using surface-modified porous monoliths and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Chuag, Shao-Hsuan; Chen, Guan-Hua; Chou, Hsin-Hao; Shen, Shu-Wei; Chen, Chien-Fu

    2013-08-01

    A rapid and sensitive immunoassay platform integrating polymerized monoliths and gold nanoparticles (AuNPs) has been developed. The porous monoliths are photopolymerized in situ within a silica capillary and serve as solid support for high-mass transport and high-density capture antibody immobilization to create a shorter diffusion length for antibody-antigen interactions, resulting in a rapid assay and low reagent consumption. AuNPs are modified with detection antibodies and are utilized as signals for colorimetric immunoassays without the need for enzyme, substrate and sophisticated equipment for quantitative measurements. This platform has been verified by performing a human IgG sandwich immunoassay with a detection limit of 0.1 ng ml-1. In addition, a single assay can be completed in 1 h, which is more efficient than traditional immunoassays that require several hours to complete.

  14. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  15. Picosecond surface restricted transient grating studies of carrier reaction dynamics at n -GaAs(100) interfaces

    SciTech Connect

    Gomez-Jahn, L.A.; Miller, R.J.D. )

    1992-03-01

    The surface restricted transient grating technique has been found to be sensitive to the Fermi level pinning surface states at the atomic interface of the native oxide layer of (100) GaAs. The sensitivity to these states is better than 10{sup {minus}4} of a monolayer. The grating signal associated with the surface states is eliminated by photoinduced removal of the oxide layer and hole transfer to Se{sup {minus}2} ions adsorbed to the surface. These results support the assignment of the signal to electronic factors associated with surface state species. The use of space charge field focusing of hole carriers to the surface has enabled a discrimination of the hole carrier reaction dynamics from those of the electron at the surface. {ital In} {ital situ} studies of interfacial hole transfer to Se{sup {minus}2} ions present at liquid junctions found the hole transfer time to be less than 30 ps. The selective quenching of the hole carrier through interfacial charge transfer has found that the hole carrier contributes to the optical dispersion in the 1 {mu} region to approximately the same extent as the electron.

  16. Effect of interaction in the Ga-As-O system on the morphology of a GaAs surface during molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Balakirev, S. V.; Solodovnik, M. S.; Eremenko, M. M.

    2016-05-01

    A thermodynamic analysis of processes of interphase interaction in the Ga-As-O system has been performed and their theoretical laws have been determined, taking into account nonlinear thermal physical properties of the compounds, the oxide film compositions, and modes of molecular-beam epitaxy of GaAs. The processes of interaction of the native oxide of GaAs with the substrate material and also with Ga and As4 from a vapor gaseous phase have been studied experimentally. The experimental results correlate with the results of the thermodynamic analysis. The laws of influence of the removal of the proper oxide on the evolution of the GaAs surface morphology under conditions of the molecular-beam epitaxy have been proposed.

  17. Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences.

    PubMed

    Reid, Matthew; Fedosejevs, Robert

    2005-01-01

    InAs has previously been reported to be an efficient emitter of terahertz radiation at low excitation fluences by use of femtosecond laser pulses. The scaling and saturation of terahertz emission from a (100) InAs surface as a function of excitation fluence is measured and quantitatively compared with the emission from a GaAs large-aperture photoconductive switch. We find that, although the instantaneous peak radiated terahertz field from (100) InAs exceeds the peak radiated signals from a GaAs large-aperture photoconductive switch biased at 1.6 kV/cm, the pulse duration is shorter. For the InAs source the total energy radiated is less than can be obtained from a GaAs large-aperture photoconductive switch. PMID:15662896

  18. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces

    PubMed Central

    2008-01-01

    Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures. PMID:20596345

  19. Carbon xerogel microspheres and monoliths from resorcinol-formaldehyde mixtures with varying dilution ratios: preparation, surface characteristics, and electrochemical double-layer capacitances.

    PubMed

    Zapata-Benabithe, Zulamita; Carrasco-Marín, Francisco; de Vicente, Juan; Moreno-Castilla, Carlos

    2013-05-21

    Carbon xerogels in the form of microspheres and monoliths were obtained from the sol-gel polymerization of resorcinol and formaldehyde in the presence of potassium carbonate as catalyst, using water as solvent and two different molar dilution ratios. The objectives of this study were as follows: to investigate the effect of the dilution ratio, polymerization reaction time, and temperature on the rheological properties of the sols used to prepare the carbon xerogel microspheres and monoliths; and to determine the influence of their preparation methods and shapes on their surface characteristics and electrochemical double-layer (EDL) capacitance. An increase in the molar dilution ratio produced a decrease in the apparent activation energy of the sol-gel transition. Carbon xerogel microspheres were steam-activated at different burnoff percentages. The morphology, surface area, porosity, and surface chemistry of samples were determined. The main difference between the carbon xerogel microspheres and monoliths was that the latter are largely mesoporous. Better electrochemical behavior was shown by carbon xerogels in monolith than in microsphere form, but higher gravimetric and volumetric capacitances were found in activated carbon xerogel microspheres than in carbon xerogel monoliths. PMID:23617279

  20. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    SciTech Connect

    He, Yunrui; Wang, Jun Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  1. Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Liu, Qiang; Ruda, Harry E.

    1997-04-01

    Dual-beam (bias and probe) transient surface photovoltage (SPV) measurements were made on undoped semi-insulating GaAs over an extended temperature range. Above 270 K, SPV recovery transients following a bias pulse were shown to reflect near-surface conductivity changes; these are in turn controlled by surface-interface-state thermal emission. Owing to the absence of a strong surface electric field in this material, the emitted carriers are not immediately removed from the near-surface region. The recapturing of the emitted carriers is shown to be responsible for nonexponential conductivity and reciprocal-SPV transients. This behavior is considered to be characteristic of relaxation-type semiconductors with near-surface ungated structures. Below 150 K, the photoinduced transition of EL2 from its ground to metastable state EL2 was shown to change the effective electron and hole mobilities and augment the SPV signals immediately following the bias pulse. Thermally induced EL2 recovery above 120 K decreases the SPV signal from its maximum. This decay transient was analyzed and the decay rate fitted to a single exponential. An activation energy of 0.32 eV and a preexponential constant of 1.9×1012 s-1 were obtained, and attributed to the thermal recovery rate for EL2.

  2. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  3. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  4. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  5. Chemotaxis for enhanced immobilization of Escherichia coli and Legionella pneumophila on biofunctionalized surfaces of GaAs.

    PubMed

    Hassen, Walid M; Sanyal, Hashimita; Hammood, Manar; Moumanis, Khalid; Frost, Eric H; Dubowski, Jan J

    2016-06-01

    The authors have investigated the effect of chemotaxis on immobilization of bacteria on the surface of biofunctionalized GaAs (001) samples. Escherichia coli K12 bacteria were employed to provide a proof-of-concept of chemotaxis-enhanced bacterial immobilization, and then, these results were confirmed using Legionella pneumophila. The recognition layer was based on a self-assembled monolayer of thiol functionalized with specific antibodies directed toward E. coli or L. pneumophila, together with the enzyme beta-galactosidase (β-gal). The authors hypothesized that this enzyme together with its substrate lactose would produce a gradient of glucose which would attract bacteria toward the biochip surface. The chemotaxis effect was monitored by comparing the number of bacteria bound to the biochip surface with and without attractant. The authors have observed that β-gal plus lactose enhanced the immobilization of bacteria on our biochips with a higher effect at low bacterial concentrations. At 100 and 10 bacteria/ml, respectively, for E. coli and L. pneumophila, the authors observed up to 11 and 8 times more bacteria bound to biochip surfaces assisted with the chemotaxis effect in comparison to biochips without chemotaxis. At 10(4) bacteria/ml, the immobilization enhancement rate did not exceed two times. PMID:27098616

  6. Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs /AlAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Čechavičius, B.; Kavaliauskas, J.; Krivaitė, G.; Seliuta, D.; Valušis, G.; Halsall, M. P.; Steer, M. J.; Harrison, P.

    2005-07-01

    We present an optical study of beryllium δ-doped GaAs /AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3to20nm and doping densities from 2×1010to5×1012cm-2 at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ˜20kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10nm. The line broadening in lightly doped QWs, thicker than 10nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures.

  7. Hydrogen storage on high-surface-area carbon monoliths for Adsorb hydrogen Gas Vehicle

    NASA Astrophysics Data System (ADS)

    Soo, Yuchoong; Pfeifer, Peter

    2014-03-01

    Carbon briquetting can increase hydrogen volumetric storage capacity by reducing the useless void volume resulting in a better packing density. It is a robust and efficient space-filling form for an adsorbed hydrogen gas vehicle storage tank. To optimize hydrogen storage capacity, we studied three fabrication process parameters: carbon-to-binder ratio, compaction temperature, and pyrolysis atmosphere. We found that carbon-to-binder ratio and pyrolysis atmosphere have influences on gravimetric excess adsorption. Compaction temperature has large influences on gravimetric and volumetric storage capacity. We have been able to optimize these parameters for high hydrogen storage. All monolith uptakes (up to 260 bar) were measured by a custom-built, volumetric, reservoir-type instrument.

  8. High-spectral-radiance, red-emitting tapered diode lasers with monolithically integrated distributed Bragg reflector surface gratings.

    PubMed

    Feise, David; John, Wilfred; Bugge, Frank; Fiebig, Christian; Blume, Gunnar; Paschke, Katrin

    2012-10-01

    A red-emitting tapered diode laser with a monolithically integrated distributed Bragg reflector grating is presented. The device is able to emit up to 1 W of spectrally stabilized optical output power at 5°C. Depending on the period of the tenth order surface grating the emission wavelengths of these devices from the same gain material are 635 nm, 637 nm, and 639 nm. The emission is as narrow as 9 pm (FWHM) at 637.6 nm. The lateral beam quality is M(2)(1/e(2)) = 1.2. Therefore, these devices simplify techniques such as wavelength multiplexing and fiber coupling dedicating them as light sources for µ-Raman spectroscopy, absolute distance interferometry, and holographic imaging. PMID:23188301

  9. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111]. PMID:16608359

  10. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  11. First-principles investigation of tip-surface interaction on a GaAs(110) surface: Implications for atomic force and scanning tunneling microscopies

    NASA Astrophysics Data System (ADS)

    Ke, S. H.; Uda, T.; Pérez, R.; Štich, I.; Terakura, K.

    1999-10-01

    Ab initio pseudopotential total energy techniques are used to investigate the tip-surface interaction in atomic force microscopy on a GaAs(110) surface with a Si tip. Our simulations show significant surface relaxation effects in the near contact region, which lead to a complicated behavior of the total energy and force curves. In particular, the tip-induced displacement of the Ga atoms can exceed 1 Å even in the attractive force region, leading to hysteresis in the energy and force curves. These large tip-induced relaxations of the surface Ga atoms provide a natural explanation to the simultaneous imaging of both anions and cations in recent near-contact scanning tunneling microscopy experiments on this surface. We show that, for tip-surface distances where the surface topography remains unchanged and for a charge neutral Si tip, only the anion sublattice can be resolved in noncontact atomic force microscopy. Close to contact, our simulations prove that, even for atomically sharp tips (1) there is a significant contribution to the total interaction from tip atoms different from the apex atom; (2) large lateral (bonding) forces on the tip apex may develop and change the tip structure well before significant normal repulsive forces appear.

  12. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  13. Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating

    SciTech Connect

    Spindt, C.J.; Yamada, M.; Meissner, P.L.; Miyano, K.E.; Herrera, A.; Spicer, W.E. . Stanford Electronics Labs.); Arko, A.J. ); Woodall, J.M.; Pettit, G.D. . Thomas J. Watson Research Center)

    1991-01-01

    Photoelectron spectroscopy has been used as a tool to investigate the initial stages of Schottky barrier formation on GaAs (100) surfaces. This is a popular technique that has been used by many researchers in the past to measure the band bending (or shift) of the valence band and conduction band (a measure of the Schottky barrier shift), while the Fermi level remains fixed at the system ground (i.e., the ground of the spectrometer). Metal deposition on a semiconductor surface can alter the Schottky barrier at the surface and pin the Fermi level near the middle of the energy gap. Extremely clean and crystallographically perfect surfaces are required in this study. Toward this end, a method of protecting the GaAs surface was employed which consists of capping the GaAs surface with a layer of As. Upon introduction into the high vacuum system the As is thermally desorbed, revealing a pure GaAs surface. Our work was motivated by a previous study (Brillson et al) on similarly capped specimens, which suggested that metal overlayers do not pin the Schottky barrier in GaAs. Barrier heights varied by as much as 0.75 eV between Al and Au overlayers. This large energy range is a striking result in view of the fact that a considerable number of prior studies on both (110) and (100) surfaces have found that all metals will pin within a narrow (0.25 eV) range at midgap. We repeated the measurements of Brillson on the identically doped samples used in their study using two extreme range metals of Au and Al as overlayers. We found that the barrier height measurements on low doped n-type samples used in this work and in the previous work are affected by photovoltaic effects, even at room temperature. This was determined from taking spectra at a number of temperatures between 20 K and room temperature and looking for shifts. 16 refs., 7 figs.

  14. Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces

    NASA Astrophysics Data System (ADS)

    Henegar, Alex J.

    Device scaling has been key for creating faster and more powerful electronic devices. Integral circuit components like the metal-oxide semiconductor field-effect transistor (MOSFET) now rely on material deposition techniques, like atomic layer deposition (ALD), that possess atomic-scale thickness precision. At the heart of the archetypal MOSFET is a SiO2/Si interface which can be formed to near perfection. However when the thickness of the SiO 2 layer is shrunk down to a few nanometers several complications arise like unacceptably high leakage current and power consumption. Replacing Si with III-V semiconductors and SiO2 with high-k dielectric materials is appealing but comes with its own set of challenges. While SiO2 is practically defect-free, the native oxides of III-Vs are poor dielectrics. In this dissertation, the surface chemistry and interface evolution during the ALD of high-k metal oxides on Si(100), GaAs(100) and InAs(100) was studied. In particular, the surface chemistry and crystallization of TiO2 films grown on Si(100) was investigated using transmission Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Large, stable, and highly reactive anatase TiO2 grains were found to form during a post-deposition heat treatment after the ALD at 100 °C. The remainder of this work was focused on the evolution of the interfacial oxides during the deposition of TiO2 and Al2O3 on InAs(100) and GaAs(100) and during the deposition of Ta2O 5 on InAs(100). In summary the ALD precursor type, deposited film, and substrate had an influence in the evolution of the native oxides. Alkyl amine precursors fared better at removing the native oxides but the deposited films (TiO2 and Ta2O5) were susceptible to significant native oxide diffusion. The alkyl precursor used for the growth of Al 2O3 was relatively ineffective at removing the oxides but was

  15. Microfluidic devices and methods including porous polymer monoliths

    DOEpatents

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  16. Microfluidic devices and methods including porous polymer monoliths

    SciTech Connect

    Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay

    2015-12-01

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  17. Planar monolithic porous polymer layers functionalized with gold nanoparticles as large-area substrates for sensitive surface-enhanced Raman scattering sensing of bacteria.

    PubMed

    Cao, Yao; Lv, Mingyang; Xu, Haijun; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2015-10-01

    For the first time, large-area surface-enhanced Raman scattering sensing active substrates using porous polymer monolithic layers have been successfully prepared. Our approach includes a simple photoinitiated polymerization process using glycidyl methacrylate and ethylene dimethacrylate in a glass mold, followed by a chemical reaction of the epoxy functionalities leading to thiols, and the attachment of preformed gold nanoparticles. We demonstrated that this very simple process produced uniform and reproducible large area surfaces that significantly enhance sensitivity of Raman spectroscopy. Experiments were also carried out that confirmed preferential adsorption of living bacteria Escherichia coli from a very dilute solution on the surface of the monolithic layer, and immediate detection of the captured microorganisms using the SERS spectrum. PMID:26481994

  18. Monolithic microwave integrated circuit technology for advanced space communication

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Romanofsky, Robert R.

    1988-01-01

    Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

  19. Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(0 0 1): Experiment and Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Kazantsev, D. M.; Akhundov, I. O.; Shwartz, N. L.; Alperovich, V. L.; Latyshev, A. V.

    2015-12-01

    Ostwald ripening and step-terraced morphology formation on the GaAs(0 0 1) surface during annealing in equilibrium conditions are investigated experimentally and by Monte Carlo simulation. Fourier and autocorrelation analyses are used to reveal surface relief anisotropy and provide information about islands and pits shape and their size distribution. Two origins of surface anisotropy are revealed. At the initial stage of surface smoothing, crystallographic anisotropy is observed, which is caused presumably by the anisotropy of surface diffusion at GaAs(0 0 1). A difference of diffusion activation energies along [1 1 0] and [1 1 bar 0] axes of the (0 0 1) face is estimated as ΔEd ≈ 0.1 eV from the comparison of experimental results and simulation. At later stages of surface smoothing the anisotropy of the surface relief is determined by the vicinal steps direction. At the initial stage of step-terraced morphology formation the kinetics of monatomic islands and pits growth agrees with the Ostwald ripening theory. At the final stage the size of islands and pits decreases due to their incorporation into the forming vicinal steps.

  20. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  1. An investigation of penetrant techniques for detection of machining-induced surface-breaking cracks on monolithic ceramics

    SciTech Connect

    Forster, G.A.; Ellingson, W.A.

    1996-02-01

    The purpose of this effort was to evaluate penetrant methods for their ability to detect surface-breaking cracks in monolithic ceramic materials with an emphasis on detection of cracks generated by machining. There are two basic penetrant types, visible and fluorescent. The visible penetrant method is usually augmented by powder developers and cracks detected can be seen in visible light. Cracks detected by fluorescent penetrant are visible only under ultraviolet light used with or without a developer. The developer is basically a powder that wicks up penetrant from a crack to make it more observable. Although fluorescent penetrants were recommended in the literature survey conducted early in this effort, visible penetrants and two non-standard techniques, a capillary gaseous diffusion method under development at the institute of Chemical Physics in Moscow, and the {open_quotes}statiflux{close_quotes} method which involves use of electrically charged particles, were also investigated. SiAlON ring specimens (1 in. diameter, 3/4 in. wide) which had been subjected to different thermal-shock cycles were used for these tests. The capillary gaseous diffusion method is based on ammonia; the detector is a specially impregnated paper much like litmus paper. As expected, visible dye penetrants offered no detection sensitivity for tight, surface-breaking cracks in ceramics. Although the non-standard statiflux method showed promise on high-crack-density specimens, it was ineffective on limited-crack-density specimens. The fluorescent penetrant method was superior for surface-breaking crack detection, but successful application of this procedure depends greatly on the skill of the user. Two presently available high-sensitivity fluorescent penetrants were then evaluated for detection of microcracks on Si{sub 3}N{sub 4} and SiC from different suppliers. Although 50X optical magnification may be sufficient for many applications, 200X magnification provides excellent delectability.

  2. Monolithic arrays of grating-surface-emitting diode lasers and quantum well modulators for optical communications

    NASA Technical Reports Server (NTRS)

    Carlson, N. W.; Evans, G. A.; Liew, S. K.; Kaiser, C. J.

    1990-01-01

    The electro-optic switching properties of injection-coupled coherent 2-D grating-surface-emitting laser arrays with multiple gain sections and quantum well active layers are discussed and demonstrated. Within such an array of injection-coupled grating-surface-emitting lasers, a single gain section can be operated as intra-cavity saturable loss element that can modulate the output of the entire array. Experimental results demonstrate efficient sub-nanosecond switching of high power grading-surface-emitting laser arrays by using only one gain section as an intra-cavity loss modulator.

  3. Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization

    NASA Astrophysics Data System (ADS)

    Tomita, Masafumi; Mizuno, Yosuke; Takakura, Hiroyuki; Kambayashi, Daisuke; Naritsuka, Shigeya; Maruyama, Takahiro

    2016-04-01

    Surface supersaturation in microchannel epitaxy (MCE) by liquid-phase epitaxy is a key parameter to control the width-to-thickness ratio (aspect ratio), which determines the dimensions of the dislocation-free area. The interstep distance of a spiral step at a screw-dislocation and curve-fitting of screw-like steps at stacking faults (SFs) are employed to estimate the surface supersaturation during MCE. The dependence of the vertical growth rate on the surface supersaturation was experimentally studied in GaAs(001) MCE. As a result, 2D nucleation at SFs was determined to act as a strong step source, which is stronger than a typical spiral step at a screw-dislocation over a wide range of surface supersaturation. Precise control of the surface supersaturation is important to optimize the growth conditions for MCE. An MCE layer with a large aspect ratio can thus be reproducibly obtained using appropriately controlled surface supersaturation.

  4. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, Gregory A.

    1994-01-01

    A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

  5. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  6. Monolithic nanoporous gold disks with large surface area and high-density plasmonic hot-spots

    NASA Astrophysics Data System (ADS)

    Zhao, Fusheng; Zeng, Jianbo; Arnob, Md Masud Parvez; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to enhancement of the local electric field by light-excited surface plasmons, the collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3- dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks (NPGDs) not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interaction as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of NPGD can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. The coupling between external and internal nanoarchitecture provides a potential design dimension for plasmonic engineering. The synergy of large specific surface area, high-density hot spots, and tunable plasmonics would profoundly impact applications where plasmonic nanoparticles and non-plasmonic mesoporous nanoparticles are currently employed, e.g., in in-vitro and in-vivo biosensing, molecular imaging, photothermal contrast agents, and molecular cargos.

  7. Synthesis of robust hierarchical silica monoliths by surface-mediated solution/precipitation reactions over different scales: designing capillary microreactors for environmental applications.

    PubMed

    García-Aguilar, J; Miguel-García, I; Berenguer-Murcia, Á; Cazorla-Amorós, D

    2014-12-24

    A synthetic procedure to prepare novel materials (surface-mediated fillings) based on robust hierarchical monoliths is reported. The methodology includes the deposition of a (micro- or mesoporous) silica thin film on the support followed by growth of a porous monolithic SiO2 structure. It has been demonstrated that this synthesis is viable for supports of different chemical nature with different inner diameters without shrinkage of the silica filling. The formation mechanism of the surface-mediated fillings is based on a solution/precipitation process and the anchoring of the silica filling to the deposited thin film. The interaction between the two SiO2 structures (monolith and thin film) depends on the porosity of the thin film and yields composite materials with different mechanical stability. By this procedure, capillary microreactors have been prepared and have been proved to be highly active and selective in the total and preferential oxidation of carbon monoxide (TOxCO and PrOxCO). PMID:25419612

  8. Effect of chemical surface treatments on non-native (Bi/sub 2/O/sub 3/) GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Wang, E.Y.; Pandelisev, K.A.

    1981-07-01

    GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi/sub 2/O/sub 3/ interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi/sub 2/O/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ''textured'' surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.

  9. Evaluation of the minority carrier diffusion length and surface-recombination velocity in GaAs p/n solar cells

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Moeller, Hans J.; Bailey, Sheila

    1991-01-01

    The minority carrier diffusion length (Lp) and the surface recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron-beam-induced current. A fitting procedure was then used to fit this expression with experimental values to obtain Lp. The results show that both Vs and Lp vary with x. Lp measured in irradiated cells showed a marked reduction. These values were compared to those measured previously which did not account for Vs.

  10. Porous polymer monoliths: Preparation of sorbent materials with high-surface areas and controlled surface chemistry for high-throughput, online, solid-phase extraction of polar organic compounds

    SciTech Connect

    Xie, S.; Svec, F.; Frechet, J.M.J.

    1998-12-01

    Porous monolithic materials with high surface areas have been prepared from commercial 80% divinylbenzene. The pore properties of these materials are controlled by the type and composition of the porogenic solvent and by the percentage of cross-linking monomer (divinylbenzene) in the polymerization mixture. Surface area was found to increase with the divinylbenzene content of the monolith. Using high-grade divinylbenzene and a suitable porogenic solvent, monolithic materials with specific surface areas as high as 400 m{sup 2}/g yet still permeable to liquids at reasonable back pressure were obtained for the first time. A macroporous material with hydrodynamic properties optimized for solid-phase extraction has been designed and its permeability and adsorption ability was demonstrated by adsorbing phenols at flow velocities that exceed those of current materials by a factor of 30. A unique set of polymerization conditions had to be developed to allow the incorporation of polar 2-hydroxylethyl methacrylate into the hydrophobic nonpolar backbone of the divinylbenzene monolithic material. This improves wettability while high-flow properties are maintained and unusually high recoveries of polar compounds are allowed.

  11. RF characterization of monolithic microwave and mm-wave ICs

    NASA Technical Reports Server (NTRS)

    Romanofsky, R. R.; Ponchak, G. E.; Shalkhauser, K. A.; Bhasin, K. B.

    1986-01-01

    A number of fixturing techniques compatible with automatic network analysis are presented. The fixtures are capable of characterizing GaAs Monolithic Microwave Integrated Circuits (MMICs) at K and Ka band. Several different transitions are used to couple the RF test port to microstrip. Fixtures which provide chip level de-embedding are included. In addition, two advanced characterization techniques are assessed.

  12. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  13. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  14. Towards monolithic integration of mode-locked vertical cavity surface emitting laser

    NASA Astrophysics Data System (ADS)

    Aldaz, Rafael I.

    2007-12-01

    The speed and performance of today's high end computing and communications systems have placed difficult but still feasible demands on off-chip electrical interconnects. However, future interconnect systems may need aggregate bandwidths well into the terahertz range thereby making electrical bandwidth, density, and power targets impossible to meet. Optical interconnects, and specifically compact semiconductor mode-locked lasers, could alleviate this problem by providing short pulses in time at 10s of GHz repetition rates for Optical Time Division Multiplexing (OTDM) and clock distribution applications. Furthermore, the characteristic spectral comb of frequencies of these lasers could also serve as a multi-wavelength source for Wavelength Division Multiplexing (WDM) applications. A fully integrated mode-locked Vertical Cavity Surface Emitting Laser (VCSEL) is proposed as a low-cost high-speed source for these applications. The fundamental laser platform for such a device has been developed and a continuous-wave version of these lasers has been fabricated and demonstrated excellent results. Output powers close to 60mW have been obtained with very high beam quality factor of M2 < 1.07. The mode-locked laser utilizes a passive mode-locking region provided by a semiconductor saturable absorber integrated together with the gain region. Such an aggressive integration forces the resonant beam in the cavity to have the same area on the gain and absorber sections, placing high demands on the saturation fluence and absorption coefficient for the saturable absorber. Quantum Wells (QWs), excitons in QWs and Quantum Dots (QDs) have been investigated as possible saturable absorbers for the proposed device. QDs have been found to have the lowest saturation fluence and total absorption, necessary to meet the mode-locking requirements for this configuration. The need to further understand QDs as saturable absorbers has led to the development of a theoretical model on the dynamics of

  15. Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time

    NASA Astrophysics Data System (ADS)

    Lee, Daewoo; Li, Ming-Yu; Sui, Mao; Zhang, Quanzhen; Pandey, Puran; Kim, Eun-Soo; Lee, Jihoon

    2015-05-01

    Metallic nanoparticles have been widely witnessed in many applications: serving as the catalysts for various nanowire systems, as the active mediums of various device applications, and also for the nanoscale templates for hybrid quantum structures. In the performance of devices and configurations of the resulting nanostructures, the size and density of nanoparticles play critical roles. In this paper, the control of self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Based on the Volmer-Weber growth model, the formation of Au droplets and dramatic evolution of Au nanostructures on various GaAs surfaces is observed from the Au clusters to the round-dome shapes with the AT variation between 250 and 550 °C. With the systematic DA control, a radical size and density evolution of Au droplets shows the size expansion of over 400 % in average height and 800 % in average lateral diameter, while the density shows over two orders of decrease. With the DT variation, the self-assembled Au droplets tend to grow larger due to the Ostwald ripening while a clear distinction among the surface indexes is observed.

  16. Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time.

    PubMed

    Lee, Daewoo; Li, Ming-Yu; Sui, Mao; Zhang, Quanzhen; Pandey, Puran; Kim, Eun-Soo; Lee, Jihoon

    2015-12-01

    Metallic nanoparticles have been widely witnessed in many applications: serving as the catalysts for various nanowire systems, as the active mediums of various device applications, and also for the nanoscale templates for hybrid quantum structures. In the performance of devices and configurations of the resulting nanostructures, the size and density of nanoparticles play critical roles. In this paper, the control of self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Based on the Volmer-Weber growth model, the formation of Au droplets and dramatic evolution of Au nanostructures on various GaAs surfaces is observed from the Au clusters to the round-dome shapes with the AT variation between 250 and 550 °C. With the systematic DA control, a radical size and density evolution of Au droplets shows the size expansion of over 400 % in average height and 800 % in average lateral diameter, while the density shows over two orders of decrease. With the DT variation, the self-assembled Au droplets tend to grow larger due to the Ostwald ripening while a clear distinction among the surface indexes is observed. PMID:26055482

  17. Monolithic tandem solar cell

    DOEpatents

    Wanlass, M.W.

    1994-06-21

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  19. Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

    NASA Technical Reports Server (NTRS)

    Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

    1994-01-01

    A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

  20. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  1. Monolithic catalytic igniters

    NASA Technical Reports Server (NTRS)

    La Ferla, R.; Tuffias, R. H.; Jang, Q.

    1993-01-01

    Catalytic igniters offer the potential for excellent reliability and simplicity for use with the diergolic bipropellant oxygen/hydrogen as well as with the monopropellant hydrazine. State-of-the-art catalyst beds - noble metal/granular pellet carriers - currently used in hydrazine engines are limited by carrier stability, which limits the hot-fire temperature, and by poor thermal response due to the large thermal mass. Moreover, questions remain with regard to longevity and reliability of these catalysts. In this work, Ultramet investigated the feasibility of fabricating monolithic catalyst beds that overcome the limitations of current catalytic igniters via a combination of chemical vapor deposition (CVD) iridium coatings and chemical vapor infiltration (CVI) refractory ceramic foams. It was found that under all flow conditions and O2:H2 mass ratios tested, a high surface area monolithic bed outperformed a Shell 405 bed. Additionally, it was found that monolithic catalytic igniters, specifically porous ceramic foams fabricated by CVD/CVI processing, can be fabricated whose catalytic performance is better than Shell 405 and with significantly lower flow restriction, from materials that can operate at 2000 C or higher.

  2. Nano-accuracy measurements and the surface profiler by use of Monolithic Hollow Penta-Prism for precision mirror testing

    NASA Astrophysics Data System (ADS)

    Qian, Shinan; Wayne, Lewis; Idir, Mourad

    2014-09-01

    We developed a Monolithic Hollow Penta-Prism Long Trace Profiler-NOM (MHPP-LTP-NOM) to attain nano-accuracy in testing plane- and near-plane-mirrors. A new developed Monolithic Hollow Penta-Prism (MHPP) combined with the advantages of PPLTP and autocollimator ELCOMAT of the Nano-Optic-Measuring Machine (NOM) is used to enhance the accuracy and stability of our measurements. Our precise system-alignment method by using a newly developed CCD position-monitor system (PMS) assured significant thermal stability and, along with our optimized noise-reduction analytic method, ensured nano-accuracy measurements. Herein we report our tests results; all errors are about 60 nrad rms or less in tests of plane- and near-plane- mirrors.

  3. First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 × 2) surface

    NASA Astrophysics Data System (ADS)

    Akaishi, Akira; Funatsuki, Kenta; Ohtake, Akihiro; Nakamura, Jun

    2016-08-01

    Various atomic arrangements of the Mn-induced GaAs(001) surface, consisting of one Ga–As dimer and one Mn atom in the (2 × 2) unit, have been investigated by first-principles calculations. The most stable arrangement is reasonable in view of the classical electrostatic theory. It has been revealed that the topmost Ga–As dimers tend to be aligned along the [1\\bar{1}0] direction, while they are less ordered along the [110] direction. These anisotropic orderings, that is, anisotropic interactions, imply that the Mn atom, which is located between the Ga–As dimers, enhances the local electrostatic interaction between the dimers along the [1\\bar{1}0] direction, as a result of the dielectric anisotropy at the surface.

  4. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  5. Electro-optic investigation of the n-alkanethiol GaAs(001) interface: Surface phenomena and applications to photoluminescence-based biosensing

    NASA Astrophysics Data System (ADS)

    Marshall, Gregory M.

    Semiconductor surfaces coupled to molecular structures derived from organic chemistry form the basis of an emerging class of field-effect devices. In addition to molecular electronics research, these interfaces are developed for a variety of sensor applications in the electronic and optical domains. Of practical interest are self-assembled monolayers (SAMs) comprised of n-alkanethiols [HS(CH2)n], which couple to the GaAs(001) surface through S-GaAs covalent bond formation. These SAMs offer potential functionality in terms of the requisite sensor chemistry and the passivation effect such coupling is known to afford. In this thesis, the SAM-GaAs interface is investigated in the context of a photonic biosensor based on photoluminescence (PL) variation. The scope of the work is categorized into three parts: i) the structural and compositional analysis of the surface using X-ray photoelectron spectroscopy (XPS), ii) the investigation of electronic properties at the interface under equilibrium conditions using infrared (IR) spectroscopy, the Kelvin probe method, and XPS, and iii) the analysis of the electro-optic response under steady-state photonic excitation, specifically, the surface photovoltage (SPV) and PL intensity. Using a partial overlayer model of angle-resolved XPS spectra in which the component assignments are shown to be quantitatively valid, the coverage fraction of methyl-terminated SAMs is shown to exceed 90%. Notable among the findings are a low-oxide, Ga-rich surface with elemental As present in sub-monolayer quantities consistent with theoretical surface morphologies. Modal analysis of transmission IR spectra show that the SAM molecular order is sufficient to support a Beer-Lambert determination of the IR optical constants, which yields the observation of a SAM-specific absorbance enhancement. By correlation of the IR absorbance with the SAM dipole layer potential, the enhancement mechanism is attributed to the vibrational moments added by the

  6. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  7. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  8. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

    PubMed

    Dalapati, G K; Chia, C K; Tan, C C; Tan, H R; Chiam, S Y; Dong, J R; Das, A; Chattopadhyay, S; Mahata, C; Maiti, C K; Chi, D Z

    2013-02-01

    High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (As(x)O(y)) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (Ga(x)O(y)) and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices. PMID:23331503

  9. Clustering effects in a low coverage deposition of gold on the GaAs( 0 0 1 )-β2(2×4) surface: an STM-UHV and theoretical study

    NASA Astrophysics Data System (ADS)

    Amore Bonapasta, A.; Scavia, G.; Buda, F.

    2002-11-01

    A comparative study of gold deposition on the GaAs(0 0 1)-β2(2×4) surface based on scanning tunneling microscopy (STM)-ultra high vacuum (UHV) and Car-Parrinello calculations has been carried out. The theoretical results show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On the other hand, STM-UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the GaAs(0 0 1)-β2(2×4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2×4) reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly interacting with the two As dimers of the GaAs unit cell. An STM-UHV analysis of the surface for a deposition >1 ML suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.

  10. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

    PubMed Central

    2012-01-01

    We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing. PMID:22916827

  11. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  12. Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

    NASA Technical Reports Server (NTRS)

    Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

    1999-01-01

    A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

  13. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study

    PubMed Central

    2013-01-01

    High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces. No high charge states were found in either As 3d or Ga 3d core-level spectra before and after the deposition of the precursors. TMA adsorption does not disrupt the GaAs surface structure. For the (4 × 6) surface, the TMA precursor existed in both chemisorbed and physisorbed forms. In the former, TMA has lost a methyl group and is bonded to the As of the As-Ga dimer. Upon water purge, the dimethylaluminum-As group was etched off, allowing the now exposed Ga to bond with oxygen. Water also changed the physisorbed TMA into the As-O-Al(CH3)2 configuration. This configuration was also found in 1 cycle of TMA and water exposure of the (2 × 4) surface, but with a greater strength, accounting for the high interface defect density in the mid-gap region. PMID:23587341

  14. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  15. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Geddes, J.; Sokolov, V.; Contolatis, T.

    1988-01-01

    The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

  16. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    NASA Technical Reports Server (NTRS)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  17. 1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Ustinov, Victor M.; Zhukov, Alexey E.; Maleev, Nikolay A.; Egorov, Anton Y.; Kovsh, Alexey R.; Mikhrin, Sergei S.; Cherkashin, Nikolai A.; Shernyakov, Yuri M.; Maximov, Mikhail V.; Tsatsul'nikov, Anrei; Ledentsov, Nikolai N.; Alferov, Zhores I.; Lott, James A.; Bimberg, Dieter

    2002-06-01

    The development of 1.3 micron VCSELs is currently considered to give a strong impulse for a wide use of ultra-fast local area networks. In the present work we discuss MBE growth and characteristics of InAs/GaAs quantum dot (QD) lasers, we also give characteristics of 1.3 micron QD VCSELs grown on GaAs and compare them with those of 1.3 micron InGaAsN/GaAs QW VCSELs. Overgrowing the InAs quantum dot array with thin InGaAs layer allows us to achieve 1.3 micron emission. Long stripe lasers showed low threshold current density (<100 A/cm2), high differential efficiency (>50%), and low internal loss (1-2 cm-1). Maximum continuous wave (CW) output power for wide stripe lasers was as high as 2.7 W and 110 mW for single mode devices. Uncoated broad area lasers showed no visible degradation of characteristics during 450 hours (60C, ambient environment). 1.3 micron InGaAsN/GaAs QW VCSELs are characterized by higher optical loss and lower differential efficiency than QD VCSELs. Due to high gain in the active region QW VCSELS demonstrate high output power (1 mW). QW VCSELs show extremely low internal round-trip optical loss (<0.05%), low threshold currents (<2 mA), high differential efficiency (40%) and output power (600 microW).

  18. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  19. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  20. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  1. Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Wolan, John T.; Mount, Charles K.; Hoflund, Gar B.

    1998-03-01

    In this study a hyperthermal oxygen atom source has been used to form an oxide layer on an Ar+-sputtered GaAs(001) surface at room temperature, and this layer has been examined using x-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS). XPS data indicate that the Ga in the near-surface region is oxidized predominantly to Ga2O3 with a significant contribution from GaAsO4 while the As is oxidized predominantly to an AsOx species with significant contributions from As2O3 and GaAsO4 and/or As2O5. The oxide layer thickness is estimated to be about 25 Å, and the XPS Ga:As atom ratio increases from 1.1 to 1.6 during the oxidation. The ISS data indicate that the resulting oxide layer formed is more electrically insulating than a native oxide layer on this surface.

  2. Microfluidic surface-enhanced Raman scattering sensor with monolithically integrated nanoporous gold disk arrays for rapid and label-free biomolecular detection

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhao, Fusheng; Zeng, Jianbo; Qi, Ji; Lu, Jing; Shih, Wei-Chuan

    2014-11-01

    We present a microfluidic surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection. Our sensor design mitigates a common limiting factor in microfluidic SERS sensors that utilize integrated nanostructures: low-efficiency transport of biomolecules to nanostructured surface which adversely impacts sensitivity. Our strategy is to increase the total usable nanostructured surface area, which provides more adsorption sites for biomolecules. Specifically, a nanoporous gold disk (NPGD) array, a highly effective SERS substrate, has been monolithically integrated inside a microfluidic chip. Individual NPGD is known to feature an order of magnitude larger surface area than its projected disk area. The increased surface area arises from nanoscale pores and ligaments three-dimensionally distributed in the NPGD, which manifest themselves as high-density SERS hot-spots. High-density NPGD arrays further guarantee large coverage of these hot-spots on the microchannel floor. The sensor performance has been demonstrated using Rhodamine 6G to quantify spatial uniformity and determine the shortest detection time. Next, the sensor is applied to detect two biomolecules, dopamine and urea, with unprecedented detection limit and speed compared to other existing microfluidic SERS sensors. The sensor holds great promise in point-of-care applications for various biomolecular detections.

  3. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, Thomas C.

    1993-01-01

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  4. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, T.C.

    1993-03-30

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  5. Polymer network/carbon layer on monolith support and monolith catalytic reactor

    DOEpatents

    Nordquist, Andrew Francis; Wilhelm, Frederick Carl; Waller, Francis Joseph; Machado, Reinaldo Mario

    2003-08-26

    The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m.sup.2 /gram as measured by adsorption of N.sub.2 or Kr using the BET method.

  6. Monolithic mm-wave ICs for smart weapons

    NASA Astrophysics Data System (ADS)

    Duffield, T. L.

    1988-04-01

    An approach to developing a low-cost mm-wave transceiver with application to a broad range of smart weapons systems is described. The proposed transceiver technology consists of monolithic mm-wave integrated circuits on GaAs substrates. The relevant transceiver configurations, FET material, and electron beam lithography are discussed. The types of devices to which the approach is applicable are addressed, emphasizing the use of three-terminal devices for all active elements.

  7. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Pristovsek, Markus; Poser, Florian; Richter, Wolfgang

    2016-07-01

    We studied diffusion by measuring step-bunching, island spacing, and the transition from step-flow growth to two-dimensional island growth of (001) GaAs in metal-organic vapour phase epitaxy and correlated them with the surface reconstruction measured by reflectance anisotropy spectroscopy. The V/III ratio had a small effect, while the square root of the growth rate was anti-proportional to the diffusion length. The thermal activation energy was about 2.3 eV on {{c}}(4× 4) terraces and 1.6 eV on (2× 4) domains at higher temperatures. Pronounced step-bunching coincided with large (4× 2) domains at the step-edges, causing smoother steps for the [11̅0] misorientation. This Ga-rich reconstruction at the step-edges is needed for the Schwoebel barrier to induce step-bunching. At higher temperatures of (2× 4) domains grow in size, the Schwoebel barrier reduces and nucleation becomes easier on this surface which reduces diffusion length and thus step-bunching.

  8. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

    NASA Astrophysics Data System (ADS)

    Monier, G.; Bideux, L.; Robert-Goumet, C.; Gruzza, B.; Petit, M.; Lábár, J. L.; Menyhárd, M.

    2012-07-01

    The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10- 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620 °C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

  9. Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators

    SciTech Connect

    Smith, J.H.; Montague, S.; Sniegowski, J.J.

    1995-08-01

    The monolithic integration of micromechanical devices with their controlling electronics offers potential increases in performance as well as decreases in cost for these devices. Analog Devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia`s Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metallization is replaced by tungsten metallization to allow CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a further development of an approach originally developed at UC Berkeley. Specifically, the issues of yield, repeatability, and uniformity of the tungsten/CMOS approach are addressed. Also, material issues related to the development of high-temperature diffusion barriers, adhesion layers, and low-stress films are discussed. Processing and material issues associated with alternative approaches to this integration such as micromechanics- first, CMOS-last or the interleaved process are also discussed.

  10. Neutral, Charged and Stratified Polar Monoliths for Hydrophilic Interaction Capillary Electrochromatography

    PubMed Central

    Gunasena, Dilani N.; El Rassi, Ziad

    2013-01-01

    Novel polar monoliths were introduced for hydrophilic interaction capillary electrochromatography (HI-CEC). In one case, a neutral polar monolith resulted from the in situ polymerization of glyceryl methacrylate (GMM) and pentaerythritol triacrylate (PETA) in a ternary porogenic solvent. GMM and PETA possess hydroxyl functional groups, which impart the monolith with hydrophilic interaction sites. This monolith is designated as hydroxy monolith. Although the hydroxy monolith is neutral and void of fixed charges on the surface, a relatively strong cathodal EOF was observed due to the electric double layer formed by the adsorption of ions from the mobile phase, producing a bulk mobile phase flow. The second monolith is charged and referred to as AP-monolith that possesses amine/amide functionalities on its surface, and was prepared by the in situ polymerization of N-(3-aminopropyl) methacrylamide hydrochloride (NAPM) and ethylene dimethacrylate (EDMA) in the presence of cyclohexanol, dodecanol and methanol as porogens. Over the pH range studied a strong anodal EOF was observed. The AP-monolith was further exploited in HI-CEC by modifying its surface with neutral mono- and oligosaccharides to produce a series of the so called sugar modified AP-monoliths (SMAP-monolith), which are considered as stratified hydrophilic monoliths possessing a sub-layer of polar amine/amide groups and a top layer of sugar (a polyhydroxy top layer).The SMAP-monoliths can be viewed as a blend of both the hydroxy monolith and the AP-monolith. The polarity of the various monoliths seems to follow the order: hydroxy monolith < AP-monolith < SMAP-monolith. The novel monoliths were characterized over a wide range of elution conditions with a variety of polar solutes including phenols, substituted phenols, nucleic acid bases, nucleosides and nucleotides PMID:23972465

  11. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng-Wei; Hennessy, John; Antoniadis, Dimitri; Fitzgerald, Eugene A.

    2009-08-01

    Annealing native oxide covered GaAs samples in Arsine(AsH3) prior to atomic-layer-deposition of Al2O3 with trimethyaluminum (TMA) and isopropanol (IPA) results in capacitance-voltage (C-V) characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs grown by an in situ metal-organic chemical vapor deposition process. Both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process, little evidence of a native oxide was observed with high resolution transmission electron microscopy at the Al2O3/GaAs interface. The discrepancy in the C-V characteristics was observed in in situ p- and n-type GaAs samples.

  12. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  13. Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates

    NASA Astrophysics Data System (ADS)

    Kaneko, Yasuhisa; Nakagawa, Shigeru; Ichimura, Yoshikatsu; Yamada, Norihide; Mars, Dan E.; Takeuchi, Tetsuya

    2000-02-01

    We have studied blue vertical-cavity surface-emitting lasers (VCSELs) based on second-harmonic generation (SHG) grown on (411)A and (311)B GaAs substrates in order to investigate suitable substrate orientations for SHG-VCSELs. The comparison among substrate orientations has been made on three parameters, SHG conversion efficiency, transparency current density and gain coefficient. The transparency current density and the gain coefficient are characterized by edge emitting lasers grown on the above substrates. We also discuss the transparency current density and the gain coefficient for (311)A reported previously by Takahashi et al. [M. Takahashi, M. Hirai, K. Fujita, N. Egami, and K. Iga, J. Appl. Phys. 82, 4551 (1997)]. SHG conversion efficiency is 38 and 30% W for SHG-VCSELs grown on (311)B and (411)A substrates, respectively, which is consistent with theory, assuming identical nonlinear coefficients for the A face and B face. Transparency current density for (311)A, (311)B and (411)A is 80, 105 and 60 A/cm2, and gain coefficients for (311)A, (311)B and (411)A are 20, 13 and 18 cm-1, respectively. There are no significant differences between (311)A and (411)A, while those for (311)B are less than those for (311)A. In conclusion, SHG efficiency is dependent on crystal orientation consistent with theory and thus the (311) orientation is preferable. Optical gain is independent of substrate orientation, while it is dependent on substrate face and A face is preferable.

  14. Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2016-05-01

    There exist discrepancies between reports on cross-hatch (CH) behaviour and its interaction with interfacial misfit dislocations in the literature. In this work, a thorough CH analysis has been presented by use of conventional and statistical analysis of AFM data. It has been shown that correlation between cross-hatch and misfit dislocation depends on the growth conditions and residual strain. Anisotropic relaxation and dislocations, composition and epitaxial tilt have been studied by HRXRD analysis. To illustrate these findings, molecular beam epitaxy (MBE) grown metamorphic InGaAs on GaAs (001) samples have been used. Reciprocal space mapping has been used to characterize the composition and relaxation while epilayer tilt and dislocation have been investigated by HRXRD rocking curve. A better understanding of CH pattern can enable us to minimize the surface roughness for metamorphic electronic devices and to fully utilize the quasi-periodic undulation in cross-hatch in applications, like ordered quantum dot growth. [Figure not available: see fulltext.

  15. Monolithically integrated microfluidic nanoporous gold disk (NPGD) surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhao, Fusheng; Zeng, Jianbo; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    We present a novel microfluidic surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection. Our sensor design mitigates a common limiting factor in microfluidic SERS sensors that utilize integrated nanostructures: low-efficiency transport of biomolecules to nanostructured surface which adversely impacts sensitivity. Our strategy is to increase the total usable nanostructured surface area, which provides more adsorption sites for biomolecules. Specifically, nanoporous gold disk (NPGD) array, a highly effective SERS substrate, has been monolithically integrated inside a microfluidic chip. Individual NPGD is known to feature an order of magnitude larger surface area than its projected disk area. The increased surface area arises from nanoscale pores and ligaments 3- dimensionally distributed in the NPGD, which manifest themselves as high-density SERS hot-spots. High-density NPGD arrays further guarantee large coverage of these hot-spots on the microchannel floor. The SERS-active NPGD arrays enable highly-reproducible SERS measurements with relative intensity variations from 8% to -8%. R6G solutions in the concentrations ranging from 1 μM to 1 mM have been detected and quantitatively evaluated, and the performance of the sensor in continuous-flow condition has been assessed. Moreover, the sensor's capabilities have been studied by detecting and identifying a physiological metabolite (urea), and the results show lower detection limit compared to best results from most recent work using integrated nanostructured surface inside microchannels. We expect that the sensor would be applicable for detecting, identifying and quantifying molecules for some point-of-care applications, i.e. urine screening.

  16. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  17. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  18. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

    NASA Astrophysics Data System (ADS)

    Hollinger, G.; Skheyta-Kabbani, R.; Gendry, M.

    1994-04-01

    The chemical composition of thin native oxide layers grown on GaAs and InAs by ultraviolet (UV)/ozone and thermal oxidation is investigated using x-ray-photoelectron spectroscopy. Core-level binding energies, core-level intensities, and valence-band spectra are compared with data for bulk crystalline binary or ternary As, In, and Ga oxides. The chemical compositions, which vary strongly from GaAs to InAs and from thermal to UV oxidation, appear to be controlled by both thermodynamic and kinetic factors. Only for GaAs thermal oxidation are the products predicted at thermodynamic equilibrium obtained. In all cases the native oxides can be described as single phase nonstoichiometric compounds and not as a macroscopic mixture of stoichiometric binary oxides.

  19. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    SciTech Connect

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2015-03-01

    We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

  1. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect

    Ledentsov, N. N. Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2014-11-03

    We report on green (550–560 nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (∼500 A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  3. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  4. Monolithic NPG nanoparticles with large surface area, tunable plasmonics, and high-density internal hot-spots.

    PubMed

    Zhao, Fusheng; Zeng, Jianbo; Parvez Arnob, Md Masud; Sun, Po; Qi, Ji; Motwani, Pratik; Gheewala, Mufaddal; Li, Chien-Hung; Paterson, Andrew; Strych, Uli; Raja, Balakrishnan; Willson, Richard C; Wolfe, John C; Lee, T Randall; Shih, Wei-Chuan

    2014-07-21

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interactions as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of nanoporous gold disks can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. Furthermore, nanoporous gold disks can be fabricated as either bound on a surface or as non-aggregating colloidal suspension with high stability. PMID:24926835

  5. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    PubMed

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection. PMID:26375576

  6. Monolithic NPG nanoparticles with large surface area, tunable plasmonics, and high-density internal hot-spots

    NASA Astrophysics Data System (ADS)

    Zhao, Fusheng; Zeng, Jianbo; Parvez Arnob, Md Masud; Sun, Po; Qi, Ji; Motwani, Pratik; Gheewala, Mufaddal; Li, Chien-Hung; Paterson, Andrew; Strych, Uli; Raja, Balakrishnan; Willson, Richard C.; Wolfe, John C.; Lee, T. Randall; Shih, Wei-Chuan

    2014-06-01

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks not only possess large specific surface area but also high-density, internal plasmonic ``hot-spots'' with impressive electric field enhancement, which greatly promotes plasmon-matter interactions as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of nanoporous gold disks can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. Furthermore, nanoporous gold disks can be fabricated as either bound on a surface or as non-aggregating colloidal suspension with high stability.Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the

  7. Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Takehara, Yuji; Yoshimoto, Masahiro; Huang, Wei; Saraie, Junji; Oe, Kunishige; Chayahara, Akiyoshi; Horino, Yuji

    2006-01-01

    GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%.

  8. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  9. An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3

    NASA Astrophysics Data System (ADS)

    Shirakashi, J.-I.; Matsumoto, K.; Konagai, M.

    Under appropriate bias conditions in ambient humidity, AFM can be used to selectively oxidize the surface of electronic materials such as metals and semiconductors. Therefore, an AFM-based surface modification technique would be a powerful tool for fabricating nanometer-sized metal (M)/insulator (I) or semiconductor (S)/insulator (I) junction structures. Heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3 is also of great interest for application to novel device structures, because the carrier concentration is comparable to that of normal metals. Selective surface oxidation of carbon-doped p-type GaAs was achieved using a negatively biased conductive tip. The oxidation shown here was carried out under 20-25% ambient humidity. By changing the applied bias voltage and the scanning speed of the cantilever, the size of the modified structure wires was precisely controlled, with a feature size of 10 nm. These results suggest that GaAs-based devices with ultra-small SIS junction systems could be realized using the AFM-based surface oxidation process.

  10. Improved monolithic tandem solar cell

    SciTech Connect

    Wanlass, M.W.

    1991-04-23

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.