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Sample records for gaas monolithic surface

  1. GaAs monolithic RF modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  2. Surface modified aerogel monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas (Inventor); Johnston, James C. (Inventor); Kuczmarski, Maria A. (Inventor); Meador, Mary Ann B. (Inventor)

    2013-01-01

    This invention comprises reinforced aerogel monoliths such as silica aerogels having a polymer coating on its outer geometric surface boundary, and to the method of preparing said aerogel monoliths. The polymer coatings on the aerogel monoliths are derived from polymer precursors selected from the group consisting of isocyanates as a precursor, precursors of epoxies, and precursors of polyimides. The coated aerogel monoliths can be modified further by encapsulating the aerogel with the polymer precursor reinforced with fibers such as carbon or glass fibers to obtain mechanically reinforced composite encapsulated aerogel monoliths.

  3. GaAs monolithic R.F. modules for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Cauley, Michael A.

    1991-01-01

    Monolithic GaAs UHF components for use in SARSAT Emergency Distress beacons are under development by Microwave Monolithics, Inc., Simi Valley, CA. The components include a bi-phase modulator, driver amplifier, and a 5 watt power amplifier.

  4. Government systems and GaAs monolithic components

    NASA Astrophysics Data System (ADS)

    Sieger, K. J.

    1983-12-01

    The current state of monolithic GaAs technology and its current and future applications to government systems are reviewed, with attention given to the government investment strategy, commercial market impact, new technology, and challenges from silicon technology. Data obtained from a survey to determine the status of GaAs IC technology are presented. These contain the system type and acronym, a technical description of the system, the critical research and development needed to develop the particular IC, specific applications and functions of the IC in the system, the year of implementation, and the potential chip buyer. High volume applications, with chip counts of one million and more, are identified as phased arrays (radar and communication), expendable decoys, missile seekers, and satellite signal processors. Problem areas, future trends, and areas of uncertainty are discussed.

  5. A Ka-band GaAs monolithic phase shifter

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J. J.; Contolatis, A.; Bauhahn, P. E.; Chao, C.

    1983-01-01

    The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

  6. Fabrication of Monolithic Integrated Series-Connected GaAs Photovoltaic Cells for Concentrator Applications

    NASA Astrophysics Data System (ADS)

    Watanabe, Kentaroh; Yamada, Yugo; Senou, Minato; Sugiyama, Masakazu; Nakano, Yoshiaki

    2012-10-01

    Aiming at reducting in Joule energy loss of a photovoltaic cell under sunlight concentration, monolithic integration of GaAs cells has been realized, in which five subcells were connected in series and the total surface area of the cells occupied over 80% of the whole chip area. Using plasma etching with Cl2, a sufficiently sharp mesa for device isolation was obtained. Insulation between etched mesa sidewalls and interconnect electrodes proved to be the most significant issues for the purpose of eliminating shunt resistance and securing a reasonable fill factor; the SiO2 layer deposited by sputtering was much superior to polyimide as an insulator. The fabricated test device showed a short circuit current density of 20.7 mA/cm2 and an open circuit voltage of 4.79 V, which were consistent with the values for a single subcell.

  7. Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Ponchak, G. E.; Kascak, T. J.

    1985-01-01

    Gallium arsenide (GaAs) monolithic microwave integrated circuits (MMIC's) show promise in phased-array antenna applications for future space communications systems. Their efficient usage will depend on the control of amplitude and phase signals for each MMIC element in the phased array and in the low-loss radiofrequency feed. For a phased array contining several MMIC elements a complex system is required to control and feed each element. The characteristics of GaAs MMIC's for 20/30-GHz phased-array systems are discussed. The optical/MMIC interface and the desired characteristics of optical integrated circuits (OIC's) for such an interface are described. Anticipated fabrication considerations for eventual full monolithic integration of optical integrated circuits with MMIC's on a GaAs substrate are presented.

  8. Advanced digital modulation: Communication techniques and monolithic GaAs technology

    NASA Technical Reports Server (NTRS)

    Wilson, S. G.; Oliver, J. D., Jr.; Kot, R. C.; Richards, C. R.

    1983-01-01

    Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case.

  9. Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

    NASA Technical Reports Server (NTRS)

    Kunath, R. R.; Bhasin, K. B.

    1986-01-01

    The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

  10. Performance of monolithic integrated series-connected GaAs solar cells under concentrated light

    NASA Astrophysics Data System (ADS)

    Seno, Minato; Watanabe, Kentaroh; Sugiyama, Masakazu; Nakano, Yoshiaki

    2013-09-01

    The concentrator photovoltaic (CPV) system provides excellent cost performance and conversion efficiency by increasing the concentration ratio. The problem is that concentration ratio is limited by short-circuit current density (Jsc) due to cell resistance loss. In order to achieve much larger concentration ratio, the monolithically integrated series-connected GaAs photovoltaic (PV) cells were fabricated. By dividing a cell into sub-cells on a chip and connecting them in series, the cell provides smaller short-circuit current (Isc) and larger open-circuit voltage (Voc). This approach can reduce joule energy loss inside a cell without decreasing electrical power output and allow much larger concentration ratio. In our design, 10 series-connected sub-cells, with bypass diodes in parallel with each sub-cell, were integrated monolithically on semi-insulating GaAs. When some sub-cells in the array were shaded, the bypass diodes prevented the shaded sub-cells from breakdown and reduced fluctuation of power output. The detection area of a unit cell was 1.73 mm2 and an entire detection area occupied over 68% of the whole chip area. The arrayed 10 cells exhibited Voc of 9.0 V under illumination (AM 1.5G). The series-connected cell achieved maximum efficiency at higher concentration ratio than non-series-connected cell.

  11. Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

    NASA Astrophysics Data System (ADS)

    Petersen, W. C.; Siu, D. P.; Cook, H. F.

    1991-12-01

    Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

  12. Low cost high efficiency GaAs monolithic RF module for SARSAT distress beacons

    NASA Technical Reports Server (NTRS)

    Petersen, W. C.; Siu, D. P.; Cook, H. F.

    1991-01-01

    Low cost high performance (5 Watts output) 406 MHz beacons are urgently needed to realize the maximum utilization of the Search and Rescue Satellite-Aided Tracking (SARSAT) system spearheaded in the U.S. by NASA. Although current technology can produce beacons meeting the output power requirement, power consumption is high due to the low efficiency of available transmitters. Field performance is currently unsatisfactory due to the lack of safe and reliable high density batteries capable of operation at -40 C. Low cost production is also a crucial but elusive requirement for the ultimate wide scale utilization of this system. Microwave Monolithics Incorporated (MMInc.) has proposed to make both the technical and cost goals for the SARSAT beacon attainable by developing a monolithic GaAs chip set for the RF module. This chip set consists of a high efficiency power amplifier and a bi-phase modulator. In addition to implementing the RF module in Monolithic Microwave Integrated Circuit (MMIC) form to minimize ultimate production costs, the power amplifier has a power-added efficiency nearly twice that attained with current commercial technology. A distress beacon built using this RF module chip set will be significantly smaller in size and lighter in weight due to a smaller battery requirement, since the 406 MHz signal source and the digital controller have far lower power consumption compared to the 5 watt power amplifier. All the program tasks have been successfully completed. The GaAs MMIC RF module chip set has been designed to be compatible with the present 406 MHz signal source and digital controller. A complete high performance low cost SARSAT beacon can be realized with only additional minor iteration and systems integration.

  13. Process control for 0.25 um GaAs microwave monolithic integrated circuits

    NASA Astrophysics Data System (ADS)

    Hudgens, Rick D.; Meyers, Shirley; Small, Bret A.; Salzman, Keith; Rhine, David; Class, Randy

    1994-05-01

    Gallium arsenide metal semiconductor field effect transistors (GaAs MESFETs) are used in analog microwave monolithic integrated circuits (MMICs) because of their high frequency response. Common applications for MMICs include low noise and power amplifiers for use in satellite communication and missile guidance systems. The performance of MESFETs is improved with smaller gate lengths, but to consistently achieve the highest performance, control methods must be in place for the critical processes. Gate length control is the key parameter in maintaining the rf performance and a lack of gate pinch off is the major yield loss category. This paper describes the process and the tools that Texas Instruments uses to monitor the critical parameters. It also describes the control methods and reviews the major contributors to variations in the process.

  14. Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver. M.S. Thesis

    NASA Technical Reports Server (NTRS)

    Kot, R. A.; Oliver, J. D.; Wilson, S. G.

    1984-01-01

    A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver.

  15. The 20 GHz GaAs monolithic power amplifier module development

    NASA Technical Reports Server (NTRS)

    1984-01-01

    The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

  16. Ka-Band GaAs FET Monolithic Power Amplifier Development

    NASA Technical Reports Server (NTRS)

    Saunier, Paul; Tserng, Hua Quen

    1997-01-01

    Over the course of this program, very extensive progress was made in Ka-band GaAs technology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A breakthrough in power and efficiency was achieved with highly doped (8 x 10(exp 17) cm(exp -3) MBE grown MESFET material. We obtained power of 112 mW with 16 dB gain and 21.6% efficiency at 34 GHz with a monolithic 50-100-250 micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). This allowed us to achieve high power density with high efficiency. A benchmark 40% efficiency was achieved with a single-stage 100 micron MMIC at 32.5 GHz. The corresponding three-stage 50-100-250 micron amplifier achieved 180 mW with 23 dB gain and 30.3% efficiency. The next breakthrough came with 3-inch MBE grown PHEMT wafers incorporating an etch-stop layer for the gate recess (using RIE). Again, state-of-the-art performances were achieved: 40% efficiency with 235 mW output power and 20.7 dB gain. The single-stage 2 x 600 micron chip demonstrated 794 mW output power with 5 dB gain and 38.2% power-added efficiency (PAE). The Ka-band technology developed under this program has promise for extensive use: JPL demonstrated 32 GHz phased arrays with a three-stage amplifier developed under this contract. A variation of the three-stage amplifier was used successfully in a 4 x 4 phased array transmitter developed under another NASA contract.

  17. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    SciTech Connect

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano; Frigeri, Cesare; Falub, Claudiu V.; Känel, Hans von

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  18. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  19. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  20. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Astrophysics Data System (ADS)

    Dinetta, L. C.; Hannon, M. H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  1. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    NASA Technical Reports Server (NTRS)

    Dinetta, L. C.; Hannon, M. H.

    1995-01-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products. Dual

  2. Velocity surface measurements for ZnO films over /001/-cut GaAs

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Liu, Yongsheng; Jen, Cheng-Kuei

    1994-01-01

    A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

  3. The surface chemistry of GaAs atomic layer epitaxy

    SciTech Connect

    Creighton, J.R.; Banse, B.A.

    1991-01-01

    In this paper we review three proposed mechanisms for GaAs ALE and review or present data support or contradiction of these mechanisms. Surface chemistry results clearly demonstrated that TMGa irreversibly chemisorbs on the Ga-rich GaAs(100) surface. The reactive sticking coefficient (RSC) of TMGa on the adsorbate-free Ga-rich GaAs(100) surface was measured to be {approximately}0.5, conclusively demonstrating that the selective adsorption'' mechanism of ALE is not valid. We describe kinetic evidence for methyl radical desorption in support of the adsorbate inhibition'' mechanism. The methyl radical desorption rates determined by temperature programmed desorption (TPD) demonstrate that desorption is at least a factor of {approximately}10 faster from the As-rich c(2 {times} 8)/(2 {times} 4) surface than from the Ga-rich surface. It is disparity in CH{sub 3} desorption rates between the As-rich and Ga-rich surfaces that is largely responsible for GaAs ALE behavior. A gallium alkyl radical (e.g. MMGa) is also observed during TPD and molecular beam experiments, in partial support of the flux balance'' mechanism. Stoichiometry issues of ALE are also discussed. We have discovered that arsine exposures typical of atmospheric pressure and reduced pressure ALE lead to As coverages {ge} 1 ML, which provides the likely solution to the stoichiometry question regarding the arsine cycle. 32 refs., 6 figs.

  4. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOEpatents

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  5. Humidity effects on tribochemical removal of GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Yu, Bingjun; Gao, Jian; Jin, Chenning; Xiao, Chen; Wu, Jiang; Liu, Huiyun; Jiang, Shulan; Chen, Lei; Qian, Linmao

    2016-06-01

    Defect-free tribochemical removal of gallium arsenide (GaAs) was demonstrated in vacuum, dry air, and various humidity environments by scratching with a SiO2 tip. The removal depth increases with increasing relative humidity (1–90%), and reaches its maximum value in water. A perfect crystal matrix without defects was observed in the cross section of the scratched groove using a transmission electron microscope. A model based on reactive tip scratching-induced oxidation, water solubility of debris, and adhesion effect was proposed to interpret tribochemical removal of GaAs surface. This study provides new insights into defect-free and site-controlled nanofabrication of GaAs.

  6. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  7. Assessment of dynamic surface leaching of monolithic surface road materials.

    PubMed

    Paulus, Hélène; Schick, Joachim; Poirier, Jean-Eric

    2016-07-01

    Construction materials have to satisfy, among others, health and environment requirements. To check the environmental compatibility of road construction materials, release of hazardous substances into water must be assessed. Literature mostly describes the leaching behaviour of recycled aggregates for potential use in base or sub-base layers of roads. But little is known about the release of soluble substances by materials mixed with binders and compacted for intended use on road surface. In the present study, we thus performed a diffusion test with sequential renewal of water during a 64 day period according to CEN/TS 16637-2 specifications, on asphalt concretes and hydraulically bound monoliths, two common surface road materials. It is shown that release of dangerous substances is limited in these hydrodynamic conditions. It was particularly true for asphalt concrete leachates where no metallic trace element, sulphate, chloride or fluoride ion could be quantified. This is because of the low hydraulic conductivity and the low polarity of the petroleum hydrocarbon binder of these specimens. For hydraulically bound materials around 20,000 mg/m(2) of sulphate diffused from the monoliths. It is one order of magnitude higher than chloride diffusion and two orders of magnitude higher than fluoride release. No metallic trace element, except small quantities of copper in the last eluate could be quantified. No adverse effect is to be expected for human and environmental health from the leachates of these compacted surface road construction materials, because all the measured parameters were below EU (Council Directive 98/83/EC) or WHO guidelines for drinking water standards. PMID:27039367

  8. Monolithic GaAs digitizer for space-based laser pulse spreading effect

    NASA Technical Reports Server (NTRS)

    Lao, Bennig; Staples, Edward

    1988-01-01

    A 6-bit 1-GHz digitizer was designed to analyze the 1-ns pulse spreading effects in a space based altimeter. The digitizer consisted of four 4-bit flash A/D converters and a 6-bit encoder. Also, the converter utilized four 4-bit converters and a 4-to-6 bit encoder to achieve 6 bit resolution at the 1 GHz sample rate. The design was unique because it utilized only the inverters and NOR gates for the converters and encoder, hence it could be fabricated using the existing state-of-the-art GaAs processing techniques. This GHz digitizer has many commercial applications. It could be applicable to: (1) digital microwave transmission system for the telecommunication industries, (2) pulse monitoring in high kinetic chemical reactions, (3) transient signals in the medical field, and (4) microwave signals in astronomy.

  9. ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

    NASA Technical Reports Server (NTRS)

    Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei

    1995-01-01

    A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  10. Selective photon-stimulated desorption of hydrogen from GaAs surfaces.

    PubMed

    Petravic, M; Deenapanray, P N; Comtet, G; Hellner, L; Dujardin, G; Usher, B F

    2000-03-01

    Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces. PMID:11017257

  11. XPS and AFM Study of GaAs Surface Treatment

    SciTech Connect

    Contreras-Guerrero, R.; Wallace, R. M.; Aguirre-Francisco, S.; Herrera-Gomez, A.; Lopez-Lopez, M.

    2008-11-13

    Obtaining smooth and atomically clean surfaces is an important step in the preparation of a surface for device manufacturing. In this work different processes are evaluated for cleaning a GaAs surface. A good surface cleaning treatment is that which provides a high level of uniformity and controllability of the surface. Different techniques are useful as cleaning treatments depending on the growth process to be used. The goal is to remove the oxygen and carbon contaminants and then form a thin oxide film to protect the surface, which is easy to remove later with thermal desorption mechanism like molecular beam epitaxy (MBE) with minimal impact to the surface. In this study, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to characterize the structure of the surface, the composition, as well as detect oxygen and carbon contaminant on the GaAs surface. This study consists in two parts. The first part the surface was subjected to different chemical treatments. The chemical solutions were: (a)H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O(4:1:100), (b) HCl: H{sub 2}O(1:3), (c)NH{sub 4}OH 29%. The treatments (a) and (b) reduced the oxygen on the surface. Treatment (c) reduces carbon contamination. In the second part we made MOS devices on the surfaces treated. They were characterized by CV and IV electrical measurements. They show frequency dispersion.

  12. Surface Stoichiometry, Structure, and Kinetics of GaAs MOCVD

    SciTech Connect

    Baucom, K.C.; Creighton, J.R.; Moffat, H.K.

    1999-01-29

    We have used reflectance-difference spectroscopy (RDS) to examine the surface phases of GaAs(100) during metalorganic chemical vapor deposition (MOCVD). Since the identities of two important surface phases were unknown, we determined their structure and stoichiometry using a variety of surface science techniques. The Type III phase is a newly characterized As-rich (1 X 2)-CH{sub 3} reconstruction. The Type II phase is a metastable derivative of the Type I phase. RDS also indicates that the surface during MOCVD has a considerable degree of heterogeneity. Deposition rates were measured over a similar range of conditions and the kinetically-limited regime was found to correlate with the Type III phase. A simple kinetic model was found to quantitatively describe the deposition rates.

  13. Surface modifications induced by bismuth on (0 0 1) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Jiang, W. Y.; Liu, J. Q.; So, M. G.; Myrtle, K.; Kavanagh, K. L.; Watkins, S. P.

    2005-04-01

    We report the identification of reflectance difference (RD) spectra for GaAs (0 0 1) surfaces in the presence of small quantities of trimethylbismuth (TMBi) vapor under organometallic vapor phase epitaxy (OMVPE) conditions. An RD spectrum similar to that observed from the previously reported ( 3×8) Sb-terminated surface of GaAs is reported, suggesting strong similarities between the Bi and Sb terminated surfaces. Because of the low vapor pressure of Bi, it is stable under extended hydrogen purges at growth temperatures of 450C. Whereas As or Sb coverage typically saturates at 1-2 monolayers on the GaAs (0 0 1) surface under OMVPE conditions, no saturation of the Bi coverage is observed in this work. Extended exposure to TMBi results in the formation of Bi islands whose size increase with exposure time and TMBi concentration.

  14. ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

    NASA Technical Reports Server (NTRS)

    Hickernell, Frederick S.; Higgins, Robert J.; Jen, Cheng-Kuei; Kim, Yoonkee; Hunt, William D.

    1995-01-01

    A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

  15. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  16. Surface and coordination chemistry related to GaAs

    NASA Astrophysics Data System (ADS)

    Keys, Andrea

    The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron diffraction and consist of planar three-coordinate monomers. Salient structural parameters (ra) include: Al-C = 2.005(3) A, Ga-C = 2.034(2) A. The geometries are controlled by inter-ligand interactions. The electron diffraction structures are compared to those determined by ab initio calculations for M(tBU)3 (M = Al, Ga, In). To understand the most suitable linkages for the surface of GaAs, model compounds were synthesized by reacting Ga(tBU)3 and [tBu2Ga(mu-Cl]2 with one molar equivalent of varying ligands. The synthesized compounds include chlorides, benzenethiolate, dithiocarbamates, carboxylates, amides, benzohydroxamate, and phenylphosphonate. The Ga ⋯ Ga and Ga-ligand interatomic distances for these compounds, as well as Group 15 and 16 donor bridging ligands, are compared to the values for the surface of GaAs and cubic-GaS in order to determine their suitability as linkage groups for self-assembled monolayers. The most suitable linkages were determined to be benzenethiol and phenylphophonic acid, and these were used to grow self-assembled monolayers on {100} GaAs. Carboxylic acid was also used, to determine the success of the organometallic model compounds in predicting the suitability of ligands for surface reaction. Self-assembled monolayers were also grown on Al2O3, using carboxylic acids and phenylphosphonic acids as the surface linkages. Metallo-organic chemical vapor deposition was performed using single-source precursors ( tBU)2Ga(S2CNR2). The tert -butyl gallium bis-dialkyl-dithiocarbamate compounds, (tBu)Ga(S2CNR2)2, are formed as minor products via ligand disproportionation reactions. Gallium sulfide (GaS) thin films have been grown at 375-425°C by atmospheric pressure metal-organic chemical vapor deposition using compounds (tBu) 2Ga(S2CNMe2) and (tBu)2Ga(S 2CNEt2) as single source precursors. Polycrystalline samples of the chalcogenides InSe, In2Se3

  17. SNMS characterization of ion irradiated GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Scandurra, A.; Licciardello, A.; Torrisi, A.; Weigert, R.; Puglisi, O.

    1996-09-01

    This study deals with the phenomena that influence the relative intensity of the sputtered neutral yields when altered layers of GaAs are analysed by using sputtered neutral mass spectrometry (SNMS) technique. The altered layers were obtained by irradiation with He +, Ne +, Ar +, Kr +, Xe + and O 2+ ions of various energies, in order to explore different nuclear stopping power regimes. The main result is a considerable change both of the absolute and relative yields of As and Ga as a function of the bombarding time, type and energy of primary ions. The absolute variation in the sputtered neutral signal is probably related with the amorphization of the outer layers. The relative variation in the yield of As with respect to Ga is not due to true preferential sputtering but to surface segregation followed by removal of the segregated species during the bombardment.

  18. Surface defects in GaAs wafer processes

    NASA Astrophysics Data System (ADS)

    Matsushita, H.; Ishida, M.; Kikawa, J.

    1990-06-01

    The causes of micro- and macro-irregularities observed on GaAs(100) polished wafers were investigated. From the results, the wafer processes were improved so that a high-quality surface was obtained without orange peel, haze, or pits. For 3-inch wafers the flatness was improved to less than 2 μm in TTV and the warp to less than 5 μm. Improvements in the wafer processes were: development of a better polishing solution, filtering of this solution with maintenance of the pad conditions, thereby eliminating scratches, annealing at high temperature to eliminate pits, advances in slicing and lapping to reduce warp, and three-stage double-sided polishing to eliminate dimples and to improve TTV.

  19. A study of binding biotinylated nano-beads to the surface of (001) GaAs

    NASA Astrophysics Data System (ADS)

    Ding, Ximing; Moumanis, Khalid; Dubowski, Jan J.; Frost, Eric H.

    2006-02-01

    We have investigated the deposition of biotinylated nano-beads on the surface of GaAs. The deposition procedure involved either direct coating of (001) GaAs with nano-beads, or binding the nano-beads with avidin immobilized on the surface of (001) GaAs through the interface of biotin and the NH II terminal group of 11-amino-1-undecanethiol (HS(CH II) 11NH II). The efficiency of binding was tested by washing the samples in a solution of a commercial detergent and by subjecting them to a deionized water ultrasonic bath. The results indicate that nano-beads deposited directly on the surface of (001) GaAs withstand the detergent washing test but they are easily removed by ultrasonic washing. In contrast, the nano-beads attached to (001) GaAs through the avidin-biotin-thiol interface survive the ultrasonic washing tests.

  20. Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface

    NASA Astrophysics Data System (ADS)

    Ren, Bin; Miao, Zhuang; Hou, Zhi-Peng; Cheng, Hong-Chang; Shi, Feng; Jiao, Gang-Cheng; Bai, Xiao-Feng; Niu, Sen; Wang, Long; Fu, Ling-Yun

    2014-09-01

    Using the projected augmented wave potential by the density functional theory based upon gradual gradient approach method and the slab model, from the calculated surface, we identify the relaxed atoms sites of GaAs(110) surface, the electronic structure of elements K and O adsorpted on binding sites of ideal GaAs(110) surface have also been calculated, especially the total energy of the adsorption system. The comparison results of calculated total energy showed: for K and O elements at highest coverage of Θ=1ML on GaAs(110) surface, they were not formed to local domain of competitive chemical adsorption, while they were formed to a compound uniformity phase of cooperative chemical adsorption. Our calculated results providing theoretical basis and reference for the application of alkali oxidation adsorpted on GaAs surface to form a negative electron affinity photocathode.

  1. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect

    Bietti, Sergio Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano; Fedorov, Alexey

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  2. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    NASA Technical Reports Server (NTRS)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  3. The development of integrated chemical microsensors in GaAs

    SciTech Connect

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  4. Cubic GaS: A Surface Passivator For GaAs

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; Barron, Andrew R.; Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.

    1994-01-01

    Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

  5. Nanoparticle-Functionalized Porous Polymer Monolith Detection Elements for Surface-Enhanced Raman Scattering

    PubMed Central

    Liu, Jikun; White, Ian; DeVoe, Don L.

    2011-01-01

    The use of porous polymer monoliths functionalized with silver nanoparticles is introduced in this work for high-sensitivity surface-enhanced Raman scattering (SERS) detection. Preparation of the SERS detection elements is a simple process comprising the synthesis of a discrete polymer monolith section within a silica capillary, followed by physically trapping silver nanoparticle aggregates within the monolith matrix. A SERS detection limit of 220 fmol for Rhodamine 6G (R6G) is demonstrated, with excellent signal stability over a 24 h period. The capability of the SERS-active monolith for label-free detection of biomolecules was demonstrated by measurements of bradykinin and cyctochrome c. The SERS-active monoliths can be readily integrated into miniaturized micro-total-analysis systems for on-line and label-free detection for a variety of biosensing, bioanalytical, and biomedical applications. PMID:21322579

  6. Behavior of Cu and Zn Impurities on GaAs Wafer Surfaces

    NASA Astrophysics Data System (ADS)

    Shibaya, Hiroshi

    1995-08-01

    Surface Cu and Zn contamination levels of intentionally contaminated GaAs wafers were measured by total reflection X-ray fluorescence (TXRF). Cu and Zn are both major metallic impurities on GaAs wafer surfaces, but their adsorption behaviors in an organic base solution were quite different. Surface concentration of Cu was much higher than that of Zn when concentrations of Cu and Zn in the organic base solution were the same. Cleaning effects of running deionized water rinse in an ultrasonic bath (U-RDIW) were also studied. Surface concentrations of Cu and Zn were drastically reduced by U-RDIW rinse.

  7. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S.; Beskin, I.

    2014-05-05

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  8. Sulfidic photochemical passivation of GaAs surfaces in alcoholic solutions

    SciTech Connect

    Simonsmeier, T.; Ivankov, A.; Bauhofer, W.

    2005-04-15

    We report on a remarkable enhancement of the passivation effect of sulfidic solutions through illumination with above band gap light. Luminescence measurements on GaAs surfaces which have been illuminated during chemical passivation reveal in comparison to nonilluminated samples a further reduction of their surface density of states as well as a significantly increased stability of the passivation. Investigations with photoelectron spectroscopy show that illumination leads to a nearly complete removal of oxides on the surface. Measurements on Schottky diodes which have been manufactured with photochemically passivated GaAs indicate a noticeable decrease in band bending and a depinning of the Fermi level.

  9. Evolution Of Surface Topography On GaAs(100) And GaAs(111) At Normal And Oblique Incidence Of Ar{sup +}-Ions

    SciTech Connect

    Venugopal, V.; Basu, T.; Garg, S.; Majumder, S.; Sarangi, S. N.; Som, T.; Das, P.; Bhattacharyya, S. R.; Chini, T. K.

    2010-10-04

    Nanoscale surface structures emerging from medium energy (50-60 keV)Ar{sup +}-ion sputtering of p-type GaAs(100) and semi-insulating GaAs(111) substrates have been investigated. For normally incident 50 keV Ar{sup +}-ions of fluence 1x10{sup 17} ions/cm{sup 2} on GaAs(100) and GaAs(111) features in the form of nanoscale pits/holes without short range ordering are observed with densities 5.2x10{sup 9} /cm{sup 2} and 5.9x10{sup 9} /cm{sup 2}, respectively along with irregularly shaped patches of islands. For GaAs(111) on increasing the influence to 5x10{sup 17} /cm{sup 2} the pit density increases marginally to 6.2x10{sup 9} /cm{sup 2}. For 60 deg. off-normal incidence of 60 keV Ar.{sup +}-ions of fluence 2x10{sup 17} ions/cm{sup 2} on GaAs(100) microscale wavelike surface topography is observed. In all cases well-defined nanodots are absent on the surface.

  10. Monolithic phononic crystals with a surface acoustic band gap from surface phonon-polariton coupling.

    PubMed

    Yudistira, D; Boes, A; Djafari-Rouhani, B; Pennec, Y; Yeo, L Y; Mitchell, A; Friend, J R

    2014-11-21

    We theoretically and experimentally demonstrate the existence of complete surface acoustic wave band gaps in surface phonon-polariton phononic crystals, in a completely monolithic structure formed from a two-dimensional honeycomb array of hexagonal shape domain-inverted inclusions in single crystal piezoelectric Z-cut lithium niobate. The band gaps appear at a frequency of about twice the Bragg band gap at the center of the Brillouin zone, formed through phonon-polariton coupling. The structure is mechanically, electromagnetically, and topographically homogeneous, without any physical alteration of the surface, offering an ideal platform for many acoustic wave applications for photonics, phononics, and microfluidics. PMID:25479504

  11. The Influence of Surface Topography and Surface Chemistry on the Anti-Adhesive Performance of Nanoporous Monoliths.

    PubMed

    Eichler-Volf, Anna; Xue, Longjian; Dornberg, Gregor; Chen, He; Kovalev, Alexander; Enke, Dirk; Wang, Yong; Gorb, Elena V; Gorb, Stanislav N; Steinhart, Martin

    2016-08-31

    We designed spongy monoliths allowing liquid delivery to their surfaces through continuous nanopore systems (mean pore diameter ∼40 nm). These nanoporous monoliths were flat or patterned with microspherical structures a few tens of microns in diameter, and their surfaces consisted of aprotic polymer or of TiO2 coatings. Liquid may reduce adhesion forces FAd; possible reasons include screening of solid-solid interactions and poroelastic effects. Softening-induced deformation of flat polymeric monoliths upon contact formation in the presence of liquids enhanced the work of separation WSe. On flat TiO2-coated monoliths, WSe was smaller under wet conditions than under dry conditions, possibly because of liquid-induced screening of solid-solid interactions. Under dry conditions, WSe is larger on flat TiO2-coated monoliths than on flat monoliths with a polymeric surface. However, under wet conditions, liquid-induced softening results in larger WSe on flat monoliths with a polymeric surface than on flat monoliths with an oxidic surface. Monolithic microsphere arrays show antiadhesive properties; FAd and WSe are reduced by at least 1 order of magnitude as compared to flat nanoporous counterparts. On nanoporous monolithic microsphere arrays, capillarity (WSe is larger under wet than under dry conditions) and solid-solid interactions (WSe is larger on oxide than on polymer) dominate contact mechanics. Thus, the microsphere topography reduces the impact of softening-induced surface deformation and screening of solid-solid interactions associated with liquid supply. Overall, simple modifications of surface topography and chemistry combined with delivery of liquid to the contact interface allow adjusting WSe and FAd over at least 1 order of magnitude. Adhesion management with spongy monoliths exploiting deployment (or drainage) of interfacial liquids as well as induction or prevention of liquid-induced softening of the monoliths may pave the way for the design of artificial

  12. Origin of Fermi-level pinning at GaAs surfaces and interfaces

    NASA Astrophysics Data System (ADS)

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-01

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

  13. Origin of Fermi-level pinning at GaAs surfaces and interfaces.

    PubMed

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-10

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated. PMID:25372411

  14. Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening

    NASA Astrophysics Data System (ADS)

    Spindt, C. J.; Spicer, W. E.

    1989-10-01

    It has been shown by several workers that the passivation of GaAs surfaces using sulfides results in a large reduction in the surface recombination velocity accompanied by an increase in the band bending on n-type samples. This apparently contradictory pair of results leads to the suggestion that the responsible electronic states are a midgap donor compensated by an acceptor near the valence-band maximum. We explore the consequences of such a model, particularly when the midgap state is assumed to be a double donor. In the double donor case, simple qualitative arguments indicate that the surface recombination velocity can be reduced by a factor much greater than the reduction in surface-state density. The model is consistent with observations made using a variety of experimental techniques. A correlation between the electronic states and surface chemistry is made, and the As and Ga antisite defects are discussed as candidates for the donor and acceptor states.

  15. Preparation of porous polymer monoliths featuring enhanced surface coverage with gold nanoparticles

    PubMed Central

    Lv, Yongqin; Alejandro, Fernando Maya; Fréchet, Jean M. J.

    2012-01-01

    A new approach to the preparation of porous polymer monoliths with enhanced coverage of pore surface with gold nanoparticles has been developed. First, a generic poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith was reacted with cystamine followed by the cleavage of its disulfide bonds with tris(2-carboxylethyl)phosphine which liberated the desired thiol groups. Dispersions of gold nanoparticles with sizes varying from 5 to 40 nm were then pumped through the functionalized monoliths. The materials were then analyzed using both energy dispersive X-ray spectroscopy and thermogravimetric analysis. We found that the quantity of attached gold was dependent on the size of nanoparticles, with the maximum attachment of more than 60 wt% being achieved with 40 nm nanoparticles. Scanning electron micrographs of the cross sections of all the monoliths revealed the formation of a non-aggregated, homogenous monolayer of nanoparticles. The surface of the bound gold was functionalized with 1-octanethiol and 1-octadecanethiol, and these monolithic columns were used successfully for the separations of proteins in reversed phase mode. The best separations were obtained using monoliths modified with 15, 20, and 30 nm nanoparticles since these sizes produced the most dense coverage of pore surface with gold. PMID:22542442

  16. Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs

    NASA Astrophysics Data System (ADS)

    Abere, Michael J.; Torralva, Ben; Yalisove, Steven M.

    2016-04-01

    The formation of high spatial frequency laser induced periodic surface structures (HSFL) with period <0.3 λ in GaAs after irradiation with femtosecond laser pulses in air is studied. We have identified a point defect generation mechanism that operates in a specific range of fluences in semiconductors between the band-gap closure and ultrafast-melt thresholds that produces vacancy/interstitial pairs. Stress relaxation, via diffusing defects, forms the 350-400 nm tall and ˜90 nm wide structures through a bifurcation process of lower spatial frequency surface structures. The resulting HSFL are predominately epitaxial single crystals and retain the original GaAs stoichiometry.

  17. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  18. A new structure for comparing surface passivation materials of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Desalvo, Gregory C.; Barnett, Allen M.

    1989-01-01

    The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th power to 10 to the 7th power cm/sec, which dramatically lowers the efficiency of GaAs solar cells. Early attempts to circumvent this problem by making an ultra thin junction (xj less than .1 micron) proved unsuccessful when compared to lowering S sub rec by surface passivation. Present day GaAs solar cells use an GaAlAs window layer to passivate the top surface. The advantages of GaAlAs in surface passivation are its high bandgap energy and lattice matching to GaAs. Although GaAlAs is successful in reducing the surface recombination velocity, it has other inherent problems of chemical instability (Al readily oxidizes) and ohmic contact formation. The search for new, more stable window layer materials requires a means to compare their surface passivation ability. Therefore, a device structure is needed to easily test the performance of different passivating candidates. Such a test device is described.

  19. A novel surface modification technique for forming porous polymer monoliths in poly(dimethylsiloxane)

    PubMed Central

    Burke, Jeffrey M.; Smela, Elisabeth

    2012-01-01

    A new method of surface modification is described for enabling the in situ formation of homogenous porous polymer monoliths (PPMs) within poly(dimethylsiloxane) (PDMS) microfluidic channels that uses 365 nm UV illumination for polymerization. Porous polymer monolith formation in PDMS can be challenging because PDMS readily absorbs the monomers and solvents, changing the final monolith morphology, and because PDMS absorbs oxygen, which inhibits free-radical polymerization. The new approach is based on sequentially absorbing a non-hydrogen-abstracting photoinitiator and the monomers methyl methacrylate and ethylene diacrylate within the walls of the microchannel, and then polymerizing the surface treatment polymer within the PDMS, entangled with it but not covalently bound. Four different monolith compositions were tested, all of which yielded monoliths that were securely anchored and could withstand pressures exceeding the bonding strength of PDMS (40 psi) without dislodging. One was a recipe that was optimized to give a larger average pore size, required for low back pressure. This monolith was used to concentrate and subsequently mechanical lyse B lymphocytes. PMID:22685511

  20. XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

    NASA Astrophysics Data System (ADS)

    Cossu, G.; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G. M.

    In order to prepare suitable surfaces for molecular beam epitaxy (MBE), sacrificial thin oxide layers on HCl etched GaAs(100) surfaces were grown by both air and UV/ozone exposure. Passive films were subsequently removed by vacuum thermal desorption to achieve surfaces that were smooth and clean on an atomic scale. The evolution of the surface chemical composition, as a function of vacuum desorption temperature, has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS results have evidenced for air and UV/ozone exposed GaAs(100) surfaces a relationship between desorption temperature and surface chemical composition; indeed, the oxide removal is temperature dependent and sequentially selective as follows: As 2O 3. AsO and Ga 2O 3. Furthermore, XPS results have shown that air-grown films have a chemical composition and thermal desorption behaviour different from UV/ozone treated materials. Indeed, these latter have an As 2O 3/Ga 2O 3 and an unoxidized As/Ga ratio close to unity for as grown and thermal treated at 580°C surfaces, respectively. By contrast, air-exposed GaAs(100) materials are Ga 2O 3-enriched and after vacuum thermal desorption treatments have never a stoichiometric composition(As (GaAs)/Ga (GaAs)= 1). Furthermore UV/ozone treated GaAs(100) surfaces subjected to a vacuum thermal treatment at 580°C, have a troublesome organic contamination level below XPS detectability, whereas from air-exposed surfaces, carbon is not completely thermally removable

  1. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    NASA Astrophysics Data System (ADS)

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-02-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface.

  2. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching.

    PubMed

    Tang, Peng; Yu, Bingjun; Guo, Jian; Song, Chenfei; Qian, Linmao

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  3. Maskless micro/nanofabrication on GaAs surface by friction-induced selective etching

    PubMed Central

    2014-01-01

    In the present study, a friction-induced selective etching method was developed to produce nanostructures on GaAs surface. Without any resist mask, the nanofabrication can be achieved by scratching and post-etching in sulfuric acid solution. The effects of the applied normal load and etching period on the formation of the nanostructure were studied. Results showed that the height of the nanostructure increased with the normal load or the etching period. XPS and Raman detection demonstrated that residual compressive stress and lattice densification were probably the main reason for selective etching, which eventually led to the protrusive nanostructures from the scratched area on the GaAs surface. Through a homemade multi-probe instrument, the capability of this fabrication method was demonstrated by producing various nanostructures on the GaAs surface, such as linear array, intersecting parallel, surface mesas, and special letters. In summary, the proposed method provided a straightforward and more maneuverable micro/nanofabrication method on the GaAs surface. PMID:24495647

  4. Aging and detergent washing effects of the surface of (001) and (110) GaAs passivated with hexadecanethiol

    NASA Astrophysics Data System (ADS)

    Moumanis, Kh.; Ding, X.; Dubowski, J. J.; Frost, E. H.

    2006-08-01

    We report on aging and detergent washing effects in GaAs wafers passivated with hexadecanethiol (HDT) [HS(CH2)15CH3]. The evolution of the photoluminescence (PL) signal from GaAs was measured at room temperature as a function of time, up to 1000h, for thiolated (001) GaAs that was solvent cleaned and etched using standard procedures, and for thiolated (110) GaAs that was obtained by cleaving in air. For 2h of thiolation time, the decay of the PL signal from (001) GaAs and (110) GaAs could be fitted, respectively, with double and single exponential functions. This indicates that at least two different types of non-adiative recombination centers (NRRC) form on the (001) surface. The overall density of surface states formed on (110) GaAs is significantly lower than those on (001) GaAs. A single exponential decay of the PL signal has been observed for 18h thiolated samples. The strong increase of the PL signal after detergent washing of (001) GaAs suggests that this treatment is effective in removal of some of the NRRC. The 19-fold enhancement of the PL signal, in comparison to that of the oxidized sample, has been obtained using the sample that, following the etching and detergent washing procedures, was thiolated with HDT.

  5. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    NASA Astrophysics Data System (ADS)

    Shutthanandan, V.; Zhu, Z.; Stutzman, M. L.; Hannon, F. E.; Hernandez-Garcia, C.; Nandasiri, M. I.; Kuchibhatla, S. V. N. T.; Thevuthasan, S.; Hess, W. P.

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL). Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS), atomic force microscopy, and secondary ion mass spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF) photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  6. Surface science analysis of GaAs photocathodes following sustained electron beam delivery

    SciTech Connect

    Carlos Hernandez-Garcia, Fay Hannon, Marcy Stutzman, V. Shutthanandan, Z. Zhu, M. Nandasri, S. V. Kuchibhatla, S. Thevuthasan, W. P. Hess

    2012-06-01

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Photocathode quantum efficiency (QE) degradation is due to residual gasses in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the Continuous Electron Beam Accelerator Facility (CEBAF) photoinjector and one unused, were also analyzed using Transmission Electron Microscopy (TEM) and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but shows evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

  7. A low current GaAs monolithic image rejection downconverter for X-band broadcast satellite applications

    NASA Astrophysics Data System (ADS)

    Yoshimasu, Toshihiko; Sakuno, Keiichi; Matsumoto, Nobuyuki; Suematsu, Eiji; Tsukao, Toshiya; Tomita, Takashi

    1992-12-01

    This paper describes the design, fabrication and performance of a fully integrated X-band monolithic image rejection downconverter. The downconverter consists of a low noise amplifier, an image rejection mixer and an intermediate frequency amplifier. The downconverter receives RF signals between 11.7 and 12.3 GHz and converts them down to IF frequency between 1.0 and 1.6 GHz. A conversion gain of 46 +/- 1 dB, a noise figure of less than 3.3 dB and an image rejection of more than 30 dB have been achieved over the RF frequency range. The chip size of the downconverter is 1.9 x 2.2 mm and its current dissipation is only 43 mA. Since the downconverter has sufficient image rejection due to an on-chip bandstop filter, it requires no off-chip circuits. Therefore, the use of this down-converter in X-band broadcast satellite applications will lead to a great reduction in size and current dissipation.

  8. Monolithic integration of 1.3-μm InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs

    NASA Astrophysics Data System (ADS)

    Fink, Thomas; Hurm, Volker; Raynor, Brian; Koehler, Klaus; Benz, Willy; Ludwig, M.

    1995-04-01

    For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometers have been fabricated successfully on GaAs substrates using InGaAs metal-semiconductor-metal (MSM) photodiodes and AlGaAs/GaAs/AlGaAs high-electron-mobility transistors (HEMTs). Using molecular beam epitaxy (MBE), the photodetector layers were grown on top of a double (delta) -doped AlGaAs/GaAs/AlGaAs HEMT structure which allows the fabrication of enhancement and depletion field effect transistors. The photoabsorbing InGaAs layer was grown at 500 degree(s)C. To fabricate the optoelectronic receivers, first, an etch process using a combination of non-selective wet etching and selective reactive ion etching was applied to produce mesas for the photoconductors and to uncover the HEMT structure in all other areas. For the electronic circuits, our well-established HEMT process for 0.3-micrometers transistor gates was used which includes electron-beam lithography for gate definition and optical lithography for NiCr thin films resistors, capacitors, and inductors. The interdigitated MSM photodiode fingers were also fabricated using electron-beam lithography. For interconnecting the electronic circuits and the photodetectors, air bridges were employed. The entire process was performed on 2-inch wafers with more than 90% yield of functional receivers. The finished receiver--basically an MSM photodetector linked to a transimpedance amplifier--is operational at an incident wavelength of 1.3 micrometers at data rates up to 1.2 Gbit/s. The sensitivity of the detectors is 0.16 A/W at a 10 V bias.

  9. Surface analysis of different oriented GaAs substrates annealed under bismuth flow

    NASA Astrophysics Data System (ADS)

    Fitouri, H.; Moussa, I.; Rebey, A.; El Jani, B.

    2007-03-01

    Several orientations of GaAs substrates, including (1 0 0), (4 1 1), (1 1 1) and (5 1 1) have been annealed in a metalorganic vapour phase epitaxy (MOVPE) horizontal reactor at different annealing temperatures and under different trimethyl-bismuth (TMBi) flux. Surface morphology of the annealed GaAs substrates was investigated by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results show islands formation on all the studied samples. The density and size of Bi islands vary greatly with annealing temperature and TMBi flow. For different substrate orientations, the activation energies were deduced from Arrhenius plot of island density. Except for (5 1 1) oriented GaAs, all the studied orientations show the same activation energy of 1.8 eV. For low annealing temperature 420 °C, and under different Bi flux, each oriented substrate shows a specific behaviour. For higher temperatures 700 °C and above Bi islands are totally removed and the substrates are smooth. Surface change of (1 0 0) oriented GaAs substrate was in situ monitored by laser reflectometry.

  10. Effects of surface passivation on twin-free GaAs nanosheets.

    PubMed

    Arab, Shermin; Chi, Chun-Yung; Shi, Teng; Wang, Yuda; Dapkus, Daniel P; Jackson, Howard E; Smith, Leigh M; Cronin, Stephen B

    2015-02-24

    Unlike nanowires, GaAs nanosheets exhibit no twin defects, stacking faults, or dislocations even when grown on lattice mismatched substrates. As such, they are excellent candidates for optoelectronic applications, including LEDs and solar cells. We report substantial enhancements in the photoluminescence efficiency and the lifetime of passivated GaAs nanosheets produced using the selected area growth (SAG) method with metal organic chemical vapor deposition (MOCVD). Measurements are performed on individual GaAs nanosheets with and without an AlGaAs passivation layer. Both steady-state photoluminescence and time-resolved photoluminescence spectroscopy are performed to study the optoelectronic performance of these nanostructures. Our results show that AlGaAs passivation of GaAs nanosheets leads to a 30- to 40-fold enhancement in the photoluminescence intensity. The photoluminescence lifetime increases from less than 30 to 300 ps with passivation, indicating an order of magnitude improvement in the minority carrier lifetime. We attribute these enhancements to the reduction of nonradiative recombination due to the compensation of surface states after passivation. The surface recombination velocity decreases from an initial value of 2.5 × 10(5) to 2.7 × 10(4) cm/s with passivation. PMID:25565000

  11. Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

    SciTech Connect

    Mauk, M.G.; Xu, S.; Arent, D.J.; Mertens, R.P.; Borghs, G.

    1989-01-16

    Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na/sub 2/S, KOH, RuCl/sub 3/, and K/sub 2/Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority-carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5 x 10/sup 6/ cm/s (untreated surface) to 10/sup 3/ cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open-circuit voltage, and junction ''dark'' current.

  12. Initial stages of oxidation of GaAs(111)2 × 2-Ga surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Soria, F.

    1987-04-01

    The initial interaction of oxygen at room temperature with GaAs(111)2 × 2-Ga surfaces has been studied by quantitative Auger analysis and low-energy electron diffraction, under different electron irradiation and gas ionization conditions. Oxygen fills first the non-vacancy overlayer sites with a preferential bond to the Ga atoms. This adsorption phase is characterized by the absence of chemical shifts in the Ga Auger peaks that involve core levels. The oxidation stage begins with the occupation of the underlayer sites below the first Ga-As bilayer. For coverages lower than 2 monolayers oxygen adsorption and incorporation takes place without any loss of Ga or As atoms of the surface layers. Electron irradiation and gas ionization of the oxygen-covered surface increase the kinetics up to two orders of magnitude, but no changes in the adsorption sites and/or occupation sequence have been detected.

  13. Monolithic spectrometer

    DOEpatents

    Rajic, S.; Egert, C.M.; Kahl, W.K.; Snyder, W.B. Jr.; Evans, B.M. III; Marlar, T.A.; Cunningham, J.P.

    1998-05-19

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays. 6 figs.

  14. Monolithic spectrometer

    DOEpatents

    Rajic, Slobodan; Egert, Charles M.; Kahl, William K.; Snyder, Jr., William B.; Evans, III, Boyd M.; Marlar, Troy A.; Cunningham, Joseph P.

    1998-01-01

    A monolithic spectrometer is disclosed for use in spectroscopy. The spectrometer is a single body of translucent material with positioned surfaces for the transmission, reflection and spectral analysis of light rays.

  15. Behavior of Al on Clean and Oxidized GaAs(110) Surfaces

    NASA Astrophysics Data System (ADS)

    Kim, Hyunwoo

    1993-04-01

    The adsorption of Al on clean and oxidized GaAs(110) surfaces was studied. The characteristics of an oxide surface formed in vacuum and during the chemical etching process of the tip have been investigated using the field desorption (FD) cleaning method and the retarding potential analyzer (RPA) equipped with an argon laser. The results obtained for the FD clean surface and on the oxidized surface are discussed in terms of the RPA threshold and work function change. The oxide films formed at relatively low temperatures on the GaAs(110) surface can easily be desorbed by FD. The intrinsic potential drops across the oxide surface disappear suddenly at a certain field value. This may indicate that the desorbed surface region is composed of a metallic species such as Ga. Changes in work function are observed but there is no change in the threshold values (Vth) with deposition of Al on the field-desorbed clean surface. The thick layers of Al on the oxidized surface completely cancel the effect of oxide on Vth, which decreases to the value of a metallic clean surface. In addition, the value of Vth decreases dramatically to that of a metallic clean surface by absorption of the laser beam on the oxidized surface, whereas only the thermal effect is seen on a metallic clean surface.

  16. Direct Measurement of Surface Defect Level Distribution Associated with GaAs Antiphase Boundaries

    SciTech Connect

    Xu, Q.; Hsu, J.W.

    1999-01-01

    Using an electrostatic force microscope, we measure surface contact potential (SCP) variations across antiphase boundaries (APBs) on GaAs films grown on Ge substrates. The SCP at the APBs is consistently and reproducibly measured to be 30 mV higher than that at GaAs domains. This is due to Fermi levels being pinned at different surface states. The identical electrical behavior observed for all APBs indicates that they are the lowest energy {l_brace}110{r_brace} orientation. The sign of observed Fermi level shift is consistent with a prevalence of Ga-Ga bonds at real {l_brace}110{r_brace} APBs. {copyright} {ital 1999} {ital The American Physical Society}

  17. X-ray imaging and diffraction from surface phonons on GaAs

    NASA Astrophysics Data System (ADS)

    Sauer, W.; Streibl, M.; Metzger, T. H.; Haubrich, A. G. C.; Manus, S.; Wixforth, A.; Peisl, J.; Mazuelas, A.; Härtwig, J.; Baruchel, J.

    1999-09-01

    Surface acoustic waves (SAWs) are excited on the GaAs (001) surface by using interdigital transducers, designed for frequencies of up to 900 MHz. The emitted phonons with wavelengths down to 3.5 μm are visualized and characterized by combined x-ray diffraction techniques. Using stroboscopic topography, the SAW emission of a parallel and a focusing transducer geometry are imaged. High-resolution x-ray diffraction profiles show up to 12 phonon-induced satellite reflections besides the GaAs (004) reflection, with a width of 9 arcsec each. The diffraction pattern is simulated numerically, applying the kinematical scattering theory to a model crystal. From fits to measured diffraction profiles at different excitation voltages, the SAW amplitudes were calculated and found to be in the sub-nm range.

  18. Grafting zwitterionic polymer onto cryogel surface enhances protein retention in steric exclusion chromatography on cryogel monolith.

    PubMed

    Tao, Shi-Peng; Zheng, Jie; Sun, Yan

    2015-04-10

    Cryogel monoliths with interconnected macropores (10-100μm) and hydrophilic surfaces can be employed as chromatography media for protein retention in steric exclusion chromatography (SXC). SXC is based on the principle that the exclusion of polyethylene glycol (PEG) on both a hydrophilic chromatography surface and a protein favors their association, leading to the protein retention on the chromatography surface. Elution of the retained protein can be achieved by reducing PEG concentration. In this work, the surface of polyacrylamide-based cryogel monolith was modified by grafting zwitterionic poly(carboxybetaine methacrylate) (pCBMA), leading the increase in the surface hydrophilicity. Observation by scanning electron microscopy revealed the presence of the grafted pCBMA chain clusters on the cryogel surface, but pCBMA grafting did not result in the changes of the physical properties of the monolith column, and the columns maintained good recyclability in SXC. The effect of the surface grafting on the SXC behavior of γ-globulin was investigated in a wide flow rate range (0.6-12cm/min). It was found that the dynamic retention capacity increased 1.4-1.8 times by the zwitterionic polymer grafting in the flow rate range of 1.5-12cm/min. The mechanism of enhanced protein retention on the zwitterionic polymer-grafted surface was proposed. The research proved that zwitterionic polymer modification was promising for the development of new materials for SXC applications. PMID:25757821

  19. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

    SciTech Connect

    Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro; Shimojo, Fuyuki

    2014-12-08

    Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

  20. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

    1986-01-01

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  1. Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

    SciTech Connect

    Leon, R.P.; Bailey, S.G.; Mazaris, G.A.; Williams, W.D.

    1986-10-13

    A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1-bar1-bar1)Ga planes with 6 ..mu..m periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

  2. GaAs surface cleaning by thermal oxidation and sublimation in molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Saito, Junji; Nanbu, Kazuo; Ishikawa, Tomonori; Kondo, Kazuo

    1988-01-01

    GaAs surface cleaning by thermal oxidation and sublimation prior to molecular-beam-epitaxial growth has been investigated as a means of reducing the carrier depletion at the substrate and epitaxial layer interface. The carrier depletion between the substrate and epitaxial films, measured by a C-V carrier profiling technique, was shown to decrease significantly with an increase in the thickness of the thermal oxidation. The concentration of carbon contamination near the substrate-epitaxial interface was measured using secondary ion mass spectroscopy. The carbon concentration correlated very well with the carrier depletion. Therefore, the main origin of the carrier depletion is believed to be the carbon concentration of the initial growth surface. Based on these results, the thermal oxidation and sublimation of a semi-insulating GaAs substrate was successfully applied to improve the mobility and sheet concentration of the two-dimensional electron gas in selectively doped GaAs/N-Al0.3Ga0.7As heterostructures with very thin GaAs buffer layers.

  3. Characterization of GaAs(100) surfaces by AES and LEED

    NASA Astrophysics Data System (ADS)

    Mendez, M. A.; Palomares, F. J.; Cuberes, M. T.; Gonzalez, M. L.; Soria, F.

    1991-07-01

    The most important of the GaAs surfaces for technological applications are those found on the (100) orientation, which are usually prepared by molecular beam epitaxy (MBE). However, when MBE facilities are not available an alternative method of surface preparation is by simultaneous ion bombardment and annealing cycles (SIBA), which it is known to give good results on the (111) polar faces. On (100) surfaces this treatment produces the 1 × 6, 4 × 1, and c(8 × 2) Ga-rich surface reconstructions, which we have attained sequentially for decreasing As surface concentrations. The experimental As to Ga Auger ratios of the different structures have been associated with the results given by an Auger formalism which is able to predict the surface composition of the outermost bilayer. Our results for the different surface compositions are compared with all the data available in the literature for surfaces prepared by SIBA.

  4. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S.; Sofferman, D. L.; Beskin, I.

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  5. Generation of picosecond pulses with a gain-switched GaAs surface-emitting laser

    SciTech Connect

    Karin, J.R.; Melcer, L.G.; Nagarajan, R.; Bowers, J.E.; Corzine, S.W.; Morton, P.A.; Geels, R.S.; Coldren, L.A. )

    1990-09-03

    Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large signal response agrees well with the measured data. The model predicts the minimum achievable pulse width and pulse delay for this device structure. Experimental results and calculated values indicate that very high modulation rates are possible with vertical-cavity surface-emitting lasers.

  6. Monolithic integration of waveguide structures with surface-micromachined polysilicon actuators

    SciTech Connect

    Smith, J.H.; Carson, R.F.; Sullivan, C.T.; McClellan, G.

    1996-03-01

    The integration of optical components with polysilicon surface micromechanical actuation mechanisms show significant promise for signal switching, fiber alignment, and optical sensing applications. Monolithically integrating the manufacturing process for waveguide structures with the processing of polysilicon actuators allows actuated waveguides to take advantage of the economy of silicon manufacturing. The optical and stress properties of the oxides and nitrides considered for the waveguide design along with design, fabrication, and testing details for the polysilicon actuators are presented.

  7. Direct Patterning of Organic Self-Assembled Monolayer (SAM) on GaAs Surfaces via Dip-Pen Nanolithography (DPN)

    NASA Astrophysics Data System (ADS)

    Xiong, Peng; Keiper, Timothy; Wang, Xiaolei; Zhao, Jianhua

    2015-03-01

    Hybrid structures of functional molecules and solid-state (SS) materials have attracted extensive interest in surface nanoscience and molecular electronics. The formation and micro/nano patterning of organic SAMs on SS surfaces are a key step in fabricating such devices. Here we report realization of high quality MHA SAMs on GaAs and direct formation of micro/nanoscale patterns of MHA SAM on the surface by micro-contact printing (μ CP) and DPN. The process begins with the preparation of an oxide-free surface of GaAs, for which we employed treatment by an ammonium polysulfide ((NH4)2 Sx) solution. The treatment strips native oxides from GaAs creating an atomic layer of sulfur covalently bonded to the fresh surface. Formation of high-quality SAMs of thiol molecules on GaAs then proceeds through exchange of the sulfur and the thiol terminal of the molecules. The effects of the sulfur-passivation and formation of MHA SAM on the treated surface were confirmed by XPS, HRTEM, and DPN. To the best of our knowledge, this is a first realization of direct DPN of nanoscale organic SAM on a semiconductor free of surface oxide. We further evidence the utility of the hybrid platform by demonstrating directed self-assembly of Au nanoparticles onto MHA/ODT SAM templates on GaAs.

  8. In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

    NASA Technical Reports Server (NTRS)

    Yao, Huade; Snyder, Paul G.

    1991-01-01

    A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

  9. Effect of Polishing Systems on Surface Roughness and Topography of Monolithic Zirconia.

    PubMed

    Goo, C L; Yap, Auj; Tan, Kbc; Fawzy, A S

    2016-01-01

    This study evaluated the effect of different chairside polishing systems on the surface roughness and topography of monolithic zirconia. Thirty-five monolithic zirconia specimens (Lava PLUS, 3M ESPE) were fabricated and divided into five groups of seven and polished with the following: Group 1 (WZ)-Dura white stone followed by Shofu zirconia polishing kit; Group 2 (SZ)-Shofu zirconia polishing kit; Group 3 (CE)-Ceramiste porcelain polishers; Group 4 (CM)-Ceramaster porcelain polishers; and Group 5 (KZ)-Komet ZR zirconia polishers. All specimens were ground with a fine-grit diamond bur prior to polishing procedures to simulate clinical finishing. Baseline and post-polishing profilometric readings were recorded and delta Ra values (difference in mean surface roughness before and after polishing) were computed and analyzed using one-way analysis of variance and Scheffe post hoc test (p<0.05). Representative scanning electron microscopy (SEM) images of the ground but unpolished and polished specimens were acquired. Delta Ra values ranged from 0.146 for CE to 0.400 for KZ. Delta Ra values for KZ, WZ, and SZ were significantly greater than for CE. Significant differences in delta Ra values were also observed between KZ and CM. The SEM images obtained were consistent with the profilometric findings. Diamond-impregnated polishing systems were more effective than silica carbide-impregnated ones in reducing the surface roughness of ground monolithic zirconia. PMID:26666390

  10. Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning.

    PubMed

    Belz, Jürgen; Beyer, Andreas; Torunski, Torsten; Stolz, Wolfgang; Volz, Kerstin

    2016-04-01

    The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials. PMID:26855206

  11. Surface acoustic wave/silicon monolithic sensor/processor

    NASA Technical Reports Server (NTRS)

    Kowel, S. T.; Kornreich, P. G.; Nouhi, A.; Kilmer, R.; Fathimulla, M. A.; Mehter, E.

    1983-01-01

    A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

  12. High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

    NASA Astrophysics Data System (ADS)

    Groussin, Bernard; Pitard, Francois; Volluet, Gerard; Carriere, Claude

    1994-09-01

    This paper describes recent progress in the development of more advance laser diode pump source: 'Monolithic Surface Emitting Laser Diode' (MOSEL). In this structure, the linear bar arrays are epitaxially grown on an engraved substrate between etched deflection mirrors adjacent to the laser facets. The laser diode structure grown by MOCVD technique is a single quantum well graded index active region (SQW/GRINSCH). A specific process has been designed to have cleaved laser diode facets. Monolithic elements of 0.1 cm(superscript 2) have been designed and mounted. The quasi-CW operation gives over 100 W of optical power or a QCW power density of 1 KW/cm(superscript 2). A compact assembly of 10 similar elements gives an optical power of 1 KW QCW. CW operation have been also tested up to 150 W CW/cm(superscript 2).

  13. Wrinkled Graphene Monoliths as Superabsorbing Building Blocks for Superhydrophobic and Superhydrophilic Surfaces.

    PubMed

    Lv, Li-Bing; Cui, Tian-Lu; Zhang, Bing; Wang, Hong-Hui; Li, Xin-Hao; Chen, Jie-Sheng

    2015-12-01

    Superhydrophobic and superhydrophilic surfaces are of great interest because of a large range of applications, for example, as antifogging and self-cleaning coatings, as antibiofouling paints for boats, in metal refining, and for water-oil separation. An aqueous ink based on three-dimensional graphene monoliths (Gr) can be used for constructing both superhydrophobic and superhydrophilic surfaces on arbitrary substrates with different surficial structures from the meso- to the macroscale. The surface wettability of a Gr-coated surface mainly depends on which additional layers (air for a superhydrophobic surface and water for a superhydrophilic surface) are adsorbed on the surface of the graphene sheets. Switching a Gr-coated surface between being superhydrophobic and superhydrophilic can thus be easily achieved by drying and prewetting with ethanol. The Gr-based superhydrophobic membranes or films should have great potential as efficient separators for fast and gravity-driven oil-water separation. PMID:26440454

  14. Monolithically integrated micro- and nanostructured glass surface with antiglare, antireflection, and superhydrophobic properties.

    PubMed

    Tulli, Domenico; Hart, Shandon D; Mazumder, Prantik; Carrilero, Albert; Tian, Lili; Koch, Karl W; Yongsunthon, Ruchirej; Piech, Garrett A; Pruneri, Valerio

    2014-07-23

    Hierarchical micro- and nanostructured surfaces have previously been made using a variety of materials and methods, including particle deposition, polymer molding, and the like. These surfaces have attracted a wide variety of interest for applications including reduced specular reflection and superhydrophobic surfaces. To the best of our knowledge, this paper reports the first monolithic, hierarchically structured glass surface that combines micro- and nanoscale surface features to simultaneously generate antiglare (AG), antireflection (AR), and superhydrophobic properties. The AG microstructure mechanically protects the AR nanostructure during wiping and smudging, while the uniform composition of the substrate and the micro- and nanostructured surface enables ion exchange through the surface, so that both the substrate and structured surface can be simultaneously chemically strengthened. PMID:24960031

  15. Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

    SciTech Connect

    Schmidt, Christian B. Priyadarshi, Shekhar; Bieler, Mark; Tarasenko, Sergey A.

    2015-04-06

    We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which is the inverse spin Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields.

  16. Surface Science Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery

    SciTech Connect

    Shutthanandan, V.; Zhu, Zihua; Stutzman, Marcy L.; Hannon, Fay; Hernandez-Garcia, Carlos; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Thevuthasan, Suntharampillai; Hess, Wayne P.

    2012-06-12

    Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power Free Electron Lasers (FEL). Several photocathode degradation processes are suspected, including defect formation by ion back bombardment, photochemistry of surface adsorbed species and irradiation-induced surface defect formation. To better understand the mechanisms of photocathode degradation, we have conducted surface and bulk analysis studies of two GaAs photocathodes removed from the FEL photoinjector after delivering electron beam for a few years. The analysis techniques include Helium Ion Microscopy (HIM), Rutherford Backscattering Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF photoinjector were analyzed using Transmission Electron Microscopy (TEM) and SIMS. This analysis of photocathode degradation during nominal photoinjector operating conditions represents first steps towards developing robust new photocathode designs necessary for generating sub-micron emittance electron beams required for both fourth generation light sources and intense polarized CW electron beams for nuclear and high energy physics facilities.

  17. Change of the surface potential barrier of GaAs photocathode during two-step activation

    NASA Astrophysics Data System (ADS)

    Niu, Jun; Gao, Youtang; Qian, Yunsheng; Chang, Benkang

    2014-09-01

    High and low temperature activation experiments were carried out for a transmission-mode GaAs photocathode sample, and the activation photocurrent curves were recorded. The variety of the activation photocurrent curves between high and low temperatures was studied. By using fitting calculation, the surface potential barrier parameters of NEA photocathode after high and low temperature activations were obtained, respectively, and the change of the surface potential barriers between high and low -temperature activations is indicated. Besides, The NEA cathode surface after high-temperature activation and low temperature activation were analyzed respectively by using angle-dependent X-ray photoelectron spectroscopy (XPS). Above investigation results indicate that, with contrast to high-temperature activation, the thickness of surface potential barriers after low-temperature activation become thin and the vacuum level is reduced further. As a result, the cathode spectral sensitivity is improved remarkably.

  18. Effect of diameter and surface roughness on ultrasonic properties of GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Dhawan, Punit Kumar; Wan, Meher; Verma, S. K.; Pandey, D. K.; Yadav, R. R.

    2015-02-01

    Second and third order elastic constants of GaAs Nanowires (NWs) are calculated using the many-body interaction potential model. The velocities of ultrasonic waves at different orientations of propagation with unique axis are evaluated using the second order elastic constants. The ultrasonic attenuation and thermal relaxation times of the single crystalline GaAs-NW are determined as a function of diameter and surface roughness by means of Mason theoretical approach using the thermal conductivity and higher order elastic constants. The diameter variation of ultrasonic attenuation and thermal relaxation exhibit second order polynomial function of diameter. It is also found that ultrasonic attenuation and thermal relaxation follow the exponential decay with the surface roughness for GaAs-NW due to reduction in thermal conductivity caused by dominance of surface asperities. Finally, the correlations among ultrasonic parameters, thermal conductivity, surface roughness, and diameter for GaAs-NWs are established leading towards potential applications.

  19. Glancing-angle ion enhanced surface diffusion on gaAs(001) during molecular beam epitaxy.

    PubMed

    DeLuca, P M; Ruthe, K C; Barnett, S A

    2001-01-01

    We describe the effects of glancing incidence 3-4 keV Ar ion bombardment on homoepitaxial growth on vicinal GaAs(001). The average adatom lifetime on surface terraces, measured during growth using specular ion scattering, decreased monotonically with increasing ion current density. The results indicated that surface diffusivity was increased by the ions. The ion beam also suppressed growth oscillations and decreased the film surface roughness. This indicates a change from two-dimensional island nucleation to step-flow growth due to increased adatom surface diffusivity. A simple model, involving direct momentum transfer from ions to adatoms, is shown to be consistent with the measured enhanced diffusion. PMID:11177806

  20. Surface stability and atomic-step-edge kinetics on a cleaved-edge-overgrown (110) GaAs surface

    SciTech Connect

    Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.

    2007-04-10

    We investigate the evolution of surface smoothness and atomic step-edge patterns on 6-nm (110) GaAs surfaces grown by cleaved-edge overgrowth with molecular beam epitaxy (MBE) and subsequent in situ annealing at elevated substrate temperatures ranging from 590 to 650 deg. C. As the annealing temperature was increased, island structures of {mu}m scale formed on the annealed surfaces decreased in size and almost disappeared at 630 deg. C while pit structures and underlying monolayer terraces increased in size, which indicate that the surface migration of atoms are enhanced and flatten the (110) surface during annealing. At higher annealing temperatures above 630 deg. C, new triangular-shaped pit structures appeared on the surface, which disturbs atomic-scale smoothing of the (110) surfaces.

  1. Bioinspired monolithic polymer microsphere arrays as generically anti-adhesive surfaces.

    PubMed

    Eichler-Volf, Anna; Kovalev, Alexander; Wedeking, Tim; Gorb, Elena V; Xue, Longjian; You, Changjiang; Piehler, Jacob; Gorb, Stanislav N; Steinhart, Martin

    2016-01-01

    Bioinspired surface topographies showing generic anti-adhesive behaviour by minimization of the real contact area not only with rigid, but also with soft and compliant counterpart surfaces recently attracted increasing attention. In the present study, we show that such generic anti-adhesive surfaces, which moreover demonstrate anti-fouling behaviour, can be produced on a large scale by a simple double replication of monolayers of microspheres with diameters of a few 10 μm. Thus, we obtained mechanically stable monolithic arrays of microspheres tightly connected to a support of the same material. Adhesion of these microsphere arrays to sticky and compliant counterpart surfaces was one order of magnitude weaker than that of flat control samples of the same material. The generation of nanorod arrays with nanorod diameters of a few 100 nm as the second hierarchical structure level on monolithic microsphere arrays did not significantly affect the adhesion force. The experimental data on anti-adhesive behaviour were modelled using a modified Johnson-Kendall-Roberts theoretical approach that also provided general design criteria for topographic adhesion minimization to sticky counterpart surfaces. PMID:26989086

  2. Structure of GaAs(001) surfaces: The role of electrostatic interactions

    SciTech Connect

    Northrup, J.E. ); Froyen, S. )

    1994-07-15

    We report first-principles total-energy calculations for the GaAs(001) surface. Our results indicate that the 2[times]4 reconstruction corresponds to the [beta]2(2[times]4) structure, which exhibits two As dimers in the top layer and a third As dimer in the third layer. This structure has a lower surface energy than the [beta](2[times]4) model, which has three As dimers in the top layer. We also find that a model recently proposed by Skala [ital et] [ital al]. [Phys. Rev. B [bold 48], 9138 (1993)] for the structure of the Ga-rich 4[times]2 phase is energetically unfavorable. From our results we conclude that electrostatic interactions between the charged building blocks of polar semiconductor surfaces play an important role in determining the equilibrium structure. We introduce a simple model for estimating these interactions.

  3. Surface structure transitions on (0 0 1) GaAs during MBE

    NASA Astrophysics Data System (ADS)

    Preobrazhenskii, V. V.; Putyato, M. A.; Pchelyakov, O. P.; Semyagin, B. R.

    1999-05-01

    Experimental phase diagrams of GaAs (0 0 1) surface were obtained by direct measuring of the As 4 flux and the substrate temperature. The infringement of the epitaxial growth was found to occur at the ratio of As 4 to Ga fluxes less than or equal to 0.25. Hence, the As 4 incorporation coefficient is close to unity during MBE. A diffusion model was suggested to describe positions of boundaries between surface structures (SS) in the phase diagrams. Dependencies of temperatures of SS transitions on the rate of surface heating in the absence of incident fluxes were obtained. The transition temperatures were discovered to tend to constant values as the heating rate increased. A model underlying this dependence was developed.

  4. Ab initio study of atomic disorder on As-rich GaAs(111)A surface

    NASA Astrophysics Data System (ADS)

    Romanyuk, O.; Mutombo, P.; Grosse, F.

    2015-11-01

    Mechanisms for the appearance of disorder on the As-rich GaAs(111)A surface were investigated employing density functional theory (DFT). Focus was given to the As trimer interactions by considering different surface symmetries and rest site occupations. The (2 × 2) and the c(4 × 2) structure models with As trimer and an As rest site were found the most energetically stable under the As-rich experimental conditions at T = 0 K. Low interactions between neighboring As trimers causes disorder in thermodynamic equilibrium at finite temperatures. A careful analysis of the configurational entropy contributions including the different statistics was carried out. The experimentally observed As-rich (2 × 2) structure was confirmed to be kinetically stabilized. The stabilization mechanism is discussed with respect to the As trimer migration on the surface, which is limited by a large diffusion barrier through the As rest sites.

  5. Surface core-level shifts of GaAs(100)(2×4) from first principles

    NASA Astrophysics Data System (ADS)

    Punkkinen, M. P. J.; Laukkanen, P.; Kokko, K.; Ropo, M.; Ahola-Tuomi, M.; Väyrynen, I. J.; Komsa, H.-P.; Rantala, T. T.; Pessa, M.; Kuzmin, M.; Vitos, L.; Kollár, J.; Johansson, B.

    2007-09-01

    First-principles calculations show that measured surface core-level shifts (SCLSs) of the GaAs(100)(2×4) surfaces can be described within the initial state effects. The calculated As3d and Ga3d SCLSs for the β2 and α2 reconstructions of the GaAs(100)(2×4) surfaces are in reasonable agreement with recent measurements. In particular, the results confirm that both the lower and the higher binding energy SCLSs, relative to the bulk emission in the As3d photoelectron spectra, are intrinsic properties of the GaAs(100)(2×4) surfaces. The most positive and most negative As shifts are attributed to the third layer As atoms, which differs from the previous intuitive suggestions. In general, calculations show that significant SCLSs arise from deep layers, and that there are more than two SCLSs. Our previously measured As3d spectra are fitted afresh using the calculated SCLSs. The intensity ratios of the SCLSs, obtained from the fits, show that as the heating temperature of the GaAs(100)(2×4) surface is increased gradually, the area of the α2 reconstruction increases on the surface, but the β2 phase remains within the whole temperature range, in agreement with previous experimental findings. Our results show that the combination of the experimental and theoretical results is a prerequisite for the accurate analysis of the SCLSs of the complex reconstructed surfaces.

  6. High Efficiency, Surface Stable Photocatalytic H2 evolution on TiO2 -passivated GaAs

    NASA Astrophysics Data System (ADS)

    Qiu, Jing; Zeng, Guangtong; Cronin, Stephen B.; Stephen B. Cronin nano research lab Team

    2015-03-01

    III-V compounds, such as GaAs, are used widely for high efficiency photovoltaic solar energy conversion. The electrochemical instability of these materials, however, has limited their applicability in photocatalysis. Here, we demonstrate that thin (1-5nm) films of TiO2 deposited by atomic layer deposition on planar GaAs provide electrochemical stability and substantial improvements in the efficiency of photocatalytic water splitting. The TiO2-passivated GaAs shows no photochemical degradation or corrosion after 48 hours, while bare GaAs shows substantial degradation after just 15 minutes. This TiO2 passivation layer produces a 32-fold enhancement over bare GaAs, with an overall photoconversion efficiency of 11%. We find that just 1nm of TiO2 produces the optimum conditions for photocatalysis. This is not thick enough to form a continuous film, and instead produces small regions of non-stiochiometric TiOx, which is rich with Ti3+ surface states that are known to be catalytically active sites. These charged sites stabilize, or lower the energy of, OH- intermediate species in this reaction, thus lowering the reaction barrier height. X-ray photoemission spectroscopy and photoluminescence spectroscopy provide further evidence for these Ti3+ surface states. ARO Award No. W911NF-14-1-0228 & NSF Award No. CBET-0846725, XPS data were collected at the Molecular Materials Research Center of the Beckman Institute of the California Institute of Technology.

  7. On-column enrichment and surface-enhanced Raman scattering detection in nanoparticles functionalized porous capillary monolith.

    PubMed

    Jiang, Qian; Zeng, Tian; Yang, Song; Chen, Qian; Chen, Lei; Ye, Yong; Zhou, Ji; Xu, Shuping

    2015-04-15

    A monolithic column functionalized with gold nanoparticles (GNPs) was designed to provide ultrasensitive detection with surface-enhanced Raman scattering (SERS). The monolithic column based on poly (glycidyl methacrylate-co-ethylene dimethacrylate) (GMA-co-EDMA) was served as the enrichment sorbent to concentrate GNPs and targets. We found that 60 nm GNPs-functionalized monolithic columns demonstrated the best SERS enhancement, and the lowest detectable concentration for PATP and CV could be achieved at 10(-7) and 10(-11) M, respectively. Moreover, the columns exhibit a good reproducibility in both spot-to-spot (∼10%) and batch-to-batch (∼15%). The SERS monolithic column with a high sensitivity and reproducibility has a great potential in the field-based rapid detection of targets in complex real-world samples. PMID:25681809

  8. Porous polymer monoliths with large surface area and functional groups prepared via copolymerization of protected functional monomers and hypercrosslinking.

    PubMed

    Maya, Fernando; Svec, Frantisek

    2013-11-22

    A new approach to the preparation of porous polymer monoliths possessing both large surface area and functional groups has been developed. The chloromethyl groups of poly(styrene-co-4-acetoxystyrene-co-vinylbenzyl chloride-co-divinylbenzene) monolith enable post-polymerization hypercrosslinking catalyzed by ferric chloride in dichloroethane leading to a multitude of small pores thus enhancing the surface area. The acetoxy functionalities are easily deprotected using hydrazine to produce polar phenolic hydroxyl groups, which would be difficult to obtain by direct copolymerization of hydroxyl-containing monomers. The hypercrosslinking and deprotection reactions as well as their sequence were studied in detail with bulk polymer monoliths containing up to 50% 4-acetoxystyrene and its progress monitored by infrared spectrometry and nitrogen adsorption/desorption measurements. No significant difference was found for both possible successions. All monoliths were also prepared in a capillary column format, then deprotected and hypercrosslinked. Capillary columns were tested for the separation of small molecules using reversed phase and normal phase chromatographic modes. For polymer monoliths containing 50% deprotected 4-acetoxystyrene, column efficiencies of 40,000 plates/m for benzene in reversed phase mode and 31,800 plates/m for nitrobenzene in normal phase mode, were obtained. The percentage of hydroxyl groups in the monoliths enables modulation of polarity of the stationary phase. They also represent functionalities that are potentially suitable for further modifications and formation of new types of stationary phases for liquid chromatography. PMID:23910448

  9. Crystal bending by surface damaging in mosaic GaAs crystals for the LAUE project

    NASA Astrophysics Data System (ADS)

    Buffagni, E.; Bonnini, E.; Zappettini, A.; Guadalupi, G. M.; Rossi, F.; Ferrari, C.

    2013-09-01

    Curved crystals used as optical elements of a Laue lens for hard x- and gamma-ray astronomy have a larger diffraction efficiency with respect to perfect flat crystals. In this work we show how to achieve the bending of the crystals by a controlled surface damaging which introduces defects in a superficial layer of few tens micrometers in thickness undergoing a highly compressive strain. Several silicon, gallium arsenide and germanium wafer crystals have been treated. The local and mean curvature radii of each sample have been determined by means of high resolution x-ray diffraction measurements in Bragg condition at low energy (8 keV). (100) oriented silicon and (111) oriented germanium samples showed spherical curvatures, whereas (100) oriented GaAs treated samples evidenced an elliptical curvature with major axes corresponding to the <011< crystallographic directions. Curvature radii between 3 and 70 m were easily obtained in wafers with thicknesses up to 2 mm. Several 3x1x0.2 cm3 GaAs crystals (100) oriented with a radius of curvature of 40 m were prepared for the Laue Lens. Using a x-ray tube set at a distance of 20 m from the crystal for the first time the focusing of the (022) diffracted beam at a distance of 20 m was observed.

  10. Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers

    SciTech Connect

    Yoshita, Masahiro; Akiyama, Hidefumi; Pfeiffer, Loren N.; West, Ken W.

    2007-05-15

    Temperature and surface-coverage dependence of the evolution of surface morphology during growth-interrupt in situ annealing on GaAs epitaxial layers grown on the singular (110) cleaved edges by the cleaved-edge overgrowth method with molecular-beam epitaxy has been studied by means of atomic force microscopy. Annealing at substrate temperatures below 630 degree sign C produced atomically flat surfaces with characteristic islands or pits, depending on the surface coverage. The atomic flatness of the surfaces is enhanced with increasing annealing temperature owing to the enhanced adatom migration. At a higher annealing temperature of about 650 degree sign C, however, 2-monolayer-deep triangular pits with well-defined step edges due to Ga-atom desorption from the crystal appeared in the atomically flat surface. The growth-interrupt annealing temperature optimal for the formation of atomically flat GaAs(110) surfaces is therefore about 630 degree sign C.

  11. Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.; Wu, Y.

    1988-01-01

    A partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.

  12. Nano-pits on GaAs (1 0 0) surface: Preferential sputtering and diffusion

    NASA Astrophysics Data System (ADS)

    Kumar, Tanuj; Panchal, Vandana; Kumar, Ashish; Kanjilal, D.

    2016-07-01

    Self organized nano-structure array on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. Therefore, the control over their dimensions is gaining scientific interest in last couple of decades. In this work, fabrication of pits of nano-dimensions is carried out on the GaAs (1 0 0) surface using 50 keV Ar+ at normal incidence. Variation in fluence from 3 × 1017 ions/cm2 to 5 × 1018 ions/cm2 does not make a remarkable variation in the dimension of pits such as size and depth, which is confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). However the simultaneous dots formation is observed along with the pits at higher fluences. Average size of pits is found to be of 22 nm with depth of 1-5 nm for the used fluences. The importance of preferential sputtering of 'As' as compared to 'Ga' is estimated using energy dispersive X-ray analysis (EDX). The observed alteration in near surface composition shows the Ga enrichment of surface, which is not being much affected by variation in fluence. The growth evolution of pits and dots for the used experimental conditions is explained on the basis of ion beam induced preferential sputtering and surface diffusion.

  13. Electronic structure of Ga1- x Al x As nanostructures grown on the GaAs surface by ion implantation

    NASA Astrophysics Data System (ADS)

    Donaev, S. B.; Umirzakov, B. E.; Tashmukhamedova, D. A.

    2015-10-01

    The surface morphology and electronic properties of nanocrystalline phases and 2-7-nm-thick Ga1- x Al x As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E g of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size equals 2.8-2.9 eV.

  14. Surface chemistry of new As precursors for MOVPE and MOMBE: phenylarsine and tertiarybutylarsine on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Kaul, P.; Schütze, A.; Kohl, D.; Brauers, A.; Weyers, M.

    1992-10-01

    Surface reactions of PhAs and tBAs on unoxidized and thermally oxidized GaAs(100) were studied in an UHV chamber using a differentially pumped quadrupole mass spectrometer and a molecular beam nozzle. A special sample holder allowed periodic switching between an unoxidized and an oxidized surface to observe small differences in reactivity. The following assumptions are compatible with the experimental results: Adsorption of PhAs or tBAs on GaAs(100) followed by rupture of the As-H bonds is the first step. Most of the organometallic radicals desorb from the surface, a fraction decomposes further by rupture of the As-C bond. The organic radicals react with the surface hydrogen and desorb as benzene and butane or butene, respectively. Low values of the activation energies ( ≤ 0.4 eV) for the different reaction steps suggest a diffusion of PhAs or tBAs on the surface as the rate limiting step for the overall reaction. A comparison of oxidized and unoxidized surfaces exposed to a constant gas flux of PhAs or tBAs revealed a reduced reactivity on the oxidized surface. Thermodesorption experiments with oxidized GaAs(100) surfaces showed that the desorption temperature of GA 2O decreased from 862 K without tBAs to 835 K in a tBAs flux. During this annealing process a reaction between the surface oxide and organic radicals from the tBAs decomposition seems to form a highly stable contamination layer which was observed by X-ray photoelectron spectroscopy. This contamination of the surface can be avoided by annealing in UHV without any As-species present and monitoring the Ga 2O flux from the surface with a mass spectrometer because non-stoichiometric evaporation of GaAs occurs only after desorption of the oxide.

  15. Surface patterning of GaAs under irradiation with very heavy polyatomic Au ions

    NASA Astrophysics Data System (ADS)

    Bischoff, L.; Böttger, R.; Heinig, K.-H.; Facsko, S.; Pilz, W.

    2014-08-01

    Self-organization of surface patterns on GaAs under irradiation with heavy polyatomic Au ions has been observed. The patterns depend on the ion mass, and the substrate temperature as well as the incidence angle of the ions. At room temperature, under normal incidence the surface remains flat, whereas above 200 °C nanodroplets of Ga appear after irradiation with monatomic, biatomic as well as triatomic Au ions of kinetic energies in the range of 10-30 keV per atom. In the intermediate temperature range of 100-200 °C meander- and dot-like patterns form, which are not related to Ga excess. Under oblique ion incidence up to 45° from the surface normal, at room temperature the surface remains flat for mon- and polyatomic Au ions. For bi- and triatomic ions in the range of 60° ≤ α ≤ 70° ripple patterns have been found, which become shingle-like for α ≥ 80°, whereas the surface remains flat for monatomic ions.

  16. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

    SciTech Connect

    Berkovits, V. L. L'vova, T. V.; Ulin, V. P.

    2011-12-15

    The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350 Degree-Sign C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

  17. GaAs nanopillar-array solar cells employing in situ surface passivation

    PubMed Central

    Mariani, Giacomo; Scofield, Adam C.; Hung, Chung-Hong; Huffaker, Diana L.

    2013-01-01

    Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p–n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm−2 and fill factors of 62% with high external quantum efficiencies >70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode. PMID:23422665

  18. Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs(1 1 1)B surface reconstructions in selective-area metal organic vapour-phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoshida, Hiroatsu; Ikejiri, Keitaro; Sato, Takuya; Hara, Shinjiroh; Hiruma, Kenji; Motohisa, Junichi; Fukui, Takashi

    2009-12-01

    We analyzed twin defects in GaAs nanowires as thin as 100-400 nm and tetrahedral structures as small as 1.0 μm, which were selectively grown by metal organic vapour-phase epitaxy (MOVPE) within a SiO 2 mask window fabricated on GaAs(1 1 1)B substrates. In particular, we focused on the correlation between the twins and GaAs(1 1 1)B surface reconstructions. We confirmed that the shape of GaAs crystals selectively grown on GaAs(1 1 1)B substrates changed from hexagonal nanowires to truncated tetrahedra when the size of the mask opening was increased from 100 to 1000 nm under the same growth conditions. The shape also changed from tetrahedral to hexagonal with decreasing growth temperature ( Tg: 600-800 °C) and with increasing arsine (AsH 3) partial pressure (1.0×10 -4 to 5.0×10 -4 atm). Rotational twins around the <1 1 1> axis were found in the tetrahedra by transmission electron microscopy (TEM) and scanning electron microscopy observations. In addition, the probability of twins developing in the tetrahedra increased with decreasing mask opening size, with decreasing Tg, and with increasing AsH 3 partial pressure. The TEM study also revealed the existence of a high density of rotational twins in the nanowires, and their density increased with decreasing nanowire diameter, suggesting a correlation between the twins and the shape/size of GaAs crystals. These findings were semi-quantitatively compared with a reported phase diagram for GaAs(1 1 1)B surface reconstruction. By analyzing the relationship between twin development and MOVPE conditions, we found that the shape change of GaAs crystals on GaAs(1 1 1)B and the formation of twins coincided well with the transition of GaAs surface reconstruction between the (2×2) and (√19×√19) structures.

  19. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    SciTech Connect

    García Núñez, C. Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J.; Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P.

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  20. Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface

    SciTech Connect

    Liu Zhi; Machuca, Francisco; Pianetta, Piero; Spicer, William E.; Pease, R.F.W.

    2004-08-30

    The energy distribution curves (EDCs) of photoelectrons emitted from the GaN(0001) negative electron affinity (NEA) surfaces are investigated along with GaAs(100) NEA surfaces. These experiments are performed at room temperature using 3.82 eV laser excitation for GaN and 1.96 eV laser excitation for GaAs. We find the main contribution to the total emitted current is the electrons that have lost an average energy of 310 meV and 140 meV, respectively, in the bandbending region (BBR). We propose that the origin of the energy loss as the electrons exit the solid is due to intervalley phonon scattering in the BBR (scattering of {gamma} electrons into the L-M valleys for GaN and L valley for GaAs). EDC studies on semiconductor NEA surfaces enable us to investigate the semiconductor electron transport property in the high-field region, which is established internally by the bandbending voltage at the surface.

  1. Monte Carlo analysis of a monolithic interconnected module with a back surface reflector

    SciTech Connect

    Ballinger, C.T.; Charache, G.W.; Murray, C.S.

    1998-10-01

    Recently, the photon Monte Carlo code, RACER-X, was modified to include wave-length dependent absorption coefficients and indices of refraction. This work was done in an effort to increase the code`s capabilities to be more applicable to a wider range of problems. These new features make RACER-X useful for analyzing devices like monolithic interconnected modules (MIMs) which have etched surface features and incorporates a back surface reflector (BSR) for spectral control. A series of calculations were performed on various MIM structures to determine the impact that surface features and component reflectivities have on spectral utilization. The traditional concern of cavity photonics is replaced with intra-cell photonics in the MIM design. Like the cavity photonic problems previously discussed, small changes in optical properties and/or geometry can lead to large changes in spectral utilization. The calculations show that seemingly innocuous surface features (e.g., trenches and grid lines) can significantly reduce the spectral utilization due to the non-normal incident photon flux. Photons that enter the device through a trench edge are refracted onto a trajectory where they will not escape. This leads to a reduction in the number of reflected below bandgap photons that return to the radiator and reduce the spectral utilization. In addition, trenches expose a lateral conduction layer in this particular series of calculations which increase the absorption of above bandgap photons in inactive material.

  2. Surface passivation of tellurium-doped GaAs nanowires by GaP: Effect on electrical conduction

    SciTech Connect

    Darbandi, A.; Salehzadeh, O.; Watkins, S. P.; Kuyanov, P.; LaPierre, R. R.

    2014-06-21

    We report on the surface passivation of Au-assisted Te-doped GaAs nanowires (NWs) grown by metalorganic vapor phase epitaxy. The electrical properties of individual free standing NWs were assessed using a tungsten nano-probe inside a scanning electron microscope. The diameter independent apparent resistivity of both strained and relaxed passivated NWs suggests the unpinning of the Fermi level and reduction of sidewalls surface states density. Similar current-voltage properties were observed for partially axially relaxed GaAs/GaP NWs. This indicates a negligible contribution of misfit dislocations in the charge transport properties of the NWs. Low temperature micro-photoluminescence (μ-PL) measurements were also carried out for both uncapped and passivated GaAs NWs. The improvement of the integrated (μ-PL) intensity for GaAs/GaP NWs further confirms the effect of passivation.

  3. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Fan, J. C. C.; Turner, G. W.; Chapman, R. L.

    1984-01-01

    Shallow-homojunction GaAs solar cells are fabricated with a back-surface field (BSF) produced by a GaAs/Al(0.2)Ga(0.8)As heterostructure. These cells exhibit higher open-circuit voltages and conversion efficiencies than control cells made with a p-GaAs/p(+)-GaAs BSF. Conversion efficiencies of over 22 percent (AM1, total area) have been obtained with this new structure. The use of a higher bandgap material below the active region not only provides an enhanced BSF but will also permit the implementation of two solar-cell designs: a GaAs cell with a back-surface reflector and an AlGaAs cell that can be used as the upper cell in tandem configurations.

  4. Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

    NASA Technical Reports Server (NTRS)

    Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

    1993-01-01

    A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

  5. Method of linear combination of structural motifs for surface and step energy calculations: Application to GaAs(001)

    SciTech Connect

    Zhang, S.B.; Zunger, A.

    1996-01-01

    First-principles calculations of atomic structure and formation energies of semiconductor surfaces and surface steps are often complicated by complex structural patterns. We suggest here a simpler, algebraic (not differential) approach that is based on two observations distilled from previous first-principles calculations. {ital First}, a relatively large collection of equilibrium structures of surfaces and bulk point defects can be built from a limited number of recurring local {open_quote}{open_quote}structural motifs,{close_quote}{close_quote} including for GaAs tetrahedrally bonded Ga and As and miscoordinated atoms such as threefold-coordinated pyramidal As. {ital Second}, the structure is such that band-gap levels are emptied, resulting in charged miscoordinated atoms. These charges compensate each other. We thus express the total energy of a given surface as a sum of the energies of the motifs, and an electrostatic term representing the Madelung energy of point charges. The motif energies are derived by fitting them to a set of pseudopotential total-energy calculations for {ital flat} GaAs(001) surfaces and for point defects in {ital bulk} GaAs. This set of parameters is shown to suffice to reproduce the energies of {ital other} (001) surfaces, calculated using the same pseudopotential approach. Application of the {open_quote}{open_quote}linear combination of structural motif{close_quote}{close_quote} (LCSM) method to flat GaAs(001) surfaces reveals the following: (i) The observed {ital h}(2{times}3) surface may be a disordered {ital c}(8{times}6) surface. (ii) The observed (2{times}6) surface is a metastable surface, only 0.03 eV/(1{times}1) higher than the {alpha}(2{times}4) surface having the same surface coverage. (iii) We confirm the recent suggestion by Hashizume {ital et} {ital al}. that the observed {gamma}(2{times}4) phase of the (2{times}4) surface is a mixture of the {beta}2(2{times}4) and {ital c}(4{times}4) surfaces. (Abstract Truncated)

  6. Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces

    NASA Astrophysics Data System (ADS)

    Xu, Xingliang; Wu, Jiang; Wang, Xiaodong; Zhang, Mingliang; Li, Juntao; Shi, Zhigui; Li, Handong; Zhou, Zhihua; Ji, Haining; Niu, Xiaobin; Wang, Zhiming M.

    2016-01-01

    Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy.

  7. Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces.

    PubMed

    Xu, Xingliang; Wu, Jiang; Wang, Xiaodong; Zhang, Mingliang; Li, Juntao; Shi, Zhigui; Li, Handong; Zhou, Zhihua; Ji, Haining; Niu, Xiaobin; Wang, Zhiming M

    2016-12-01

    Ordered nanodroplet arrays and aligned nanodroplet chains are fabricated using ion-beam-directed self-organization. The morphological evolution of nanodroplets formed on GaAs (100) substrates under ion beam bombardment is characterized by scanning electron microscopy and atomic force microscopy. Ordered Ga nanodroplets are self-assembled under ion beam bombardment at off-normal incidence angles. The uniformity, size, and density of Ga nanodroplets can be tuned by the incident angles of ion beam. The ion beam current also plays a critical role in the self-ordering of Ga nanodroplets, and it is found that the droplets exhibit a similar droplet size but higher density and better uniformity with increasing the ion beam current. In addition, more complex arrangements of nanodroplets are achieved via in situ patterning and ion-beam-directed migration of Ga atoms. Particularly, compared to the destructive formation of nanodroplets through direct ion beam bombardment, the controllable assembly of nanodroplets on intact surfaces can be used as templates for fabrication of ordered semiconductor nanostructures by droplet epitaxy. PMID:26815607

  8. XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

    NASA Astrophysics Data System (ADS)

    Kumar, Praveen; Kumar, Mahesh; Govind; Mehta, B. R.; Shivaprasad, S. M.

    2009-10-01

    For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar + ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 × 10 13 ions/cm 2 to 1 × 10 18 ions/cm 2. Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N 2+ ions and 7.2 × 10 17 ions/cm 2 are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar + ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for growing low defect GaN epitaxial overlayers.

  9. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    NASA Astrophysics Data System (ADS)

    Kim, Juho; Hwang, Jeongwoo; Song, Kwangsun; Kim, Namyun; Shin, Jae Cheol; Lee, Jongho

    2016-06-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  10. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    PubMed

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature. PMID:27263630

  11. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-01

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the <110> direction, which is theoretically predicted to produce a high Curie temperature.

  12. High-quality molecular-beam epitaxial regrowth of (Al,Ga)As on Se-modified (100) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Turco, F. S.; Sandroff, C. J.; Hwang, D. M.; Ravi, T. S.; Tamargo, M. C.

    1990-08-01

    It is shown that high-quality molecular-beam epitaxial (MBE) regrowth of (Al,Ga)As on GaAs can be achieved by chemically passivating the GaAs surface ex situ prior to regrowth with aqueous selenium reagents. Reflection high-energy electron diffraction intensity oscillations show the bidimensional character of the regrowth and high-resolution transmission electron microscopy reveals defect-free regrown interfaces. Photoluminescence intensity from the Se-treated GaAs surfaces on which Al0.5Ga0.5 As is regrown rivals that from an all in situ grown AlGaAs/GaAs interface. The high quality of these regrown interfaces could be attributed to the thermally and chemically stable selenium and oxygen phases that remain bound to GaAs under MBE conditions.

  13. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

    SciTech Connect

    Samsonenko, Yu. B. Cirlin, G. E.; Khrebtov, A. I.; Bouravleuv, A. D.; Polyakov, N. K.; Ulin, V. P.; Dubrovskii, V. G.; Werner, P.

    2011-04-15

    The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630 Degree-Sign C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610 Degree-Sign C. An increase in the temperature to 640 Degree-Sign C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.

  14. Nitrogen substitutions in GaAs(001) surfaces: Density-functional supercell calculations of the surface stability

    NASA Astrophysics Data System (ADS)

    Jenichen, Arndt; Engler, Cornelia; Leibiger, Gunnar; Gottschalch, Volker

    2005-11-01

    The structures and energies of various probable reconstruction patterns of the GaAs(001) surface with restricted nitrogen substitution on arsenic positions are calculated using periodic supercells and the density-functional method. In dependence on chemical potentials of arsenic and nitrogen the most stable structures and compositions of the surface are obtained: Under extreme As-rich conditions the N-free c(4 × 4) reconstruction is the preferred arrangement. Under Ga-rich conditions the (4 × 2) reconstruction builds in variously high N-substituted structures (especially parallel coupled (GaN)n chains), which can lead to a GaN phase (phase separation). In the transition region between the Ga- and As-rich limits the 2(2 × 4) but also the 2(2 × 4) reconstruction form structures with restricted nitrogen substitution. The high stability of restricted substitutions predestinates the region between the Ga- and As-rich conditions for the growth of GaAsN alloys. The blueshift of the band gap during the annealing of the grown bulk can be explained by the transformation of the grown (GaN)n chains, which are also formed in this region (in the (2 × 4) reconstruction), to the thermodynamically most stable bulk structures.

  15. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

    SciTech Connect

    Egorov, A. Yu. Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Nevedomskiy, V. N.; Bugrov, V. E.

    2015-11-15

    Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

  16. Composition and structure of chemically prepared GaAs(1 1 1)A and (1 1 1)B surfaces

    NASA Astrophysics Data System (ADS)

    Tereshchenko, O. E.; Alperovich, V. L.; Terekhov, A. S.

    2006-02-01

    The (1 1 1)A and (1 1 1)B surfaces of GaAs chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). To avoid uncontrolled contamination, chemical treatment and sample transfer into UHV were performed under pure nitrogen atmosphere. The HCl-iPA treatment removes gallium and arsenic oxides, with about 0.5-3 ML of elemental arsenic being left on the surface, depending on the crystallographic orientation. With the increase of the annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1) and (2 × 2) on the (1 1 1)A surface and (1 × 1), (2 × 2), (1 × 1), (3 × 3), (√19 × √19) on the (1 1 1)B surface. These sequences of reconstructions correspond to the decrease of surface As concentration. The structural properties of chemically prepared GaAs(1 1 1) surfaces were found to be similar to those obtained by decapping of As-capped epitaxial layers.

  17. Adsorption and Decomposition of Organometallics on GaAs Surfaces in Low-Pressure Metalorganic Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Sato, Michio; Weyers, Markus

    1991-11-01

    To determine the mechanism of surface reactions during metalorganic chemical vapor deposition, we perform mass spectrometric studies of the products desorbed from a GaAs surface upon pulsed supply of the reactants. We find that the surface after trimethylgallium (TMG) exposure is terminated by CH3 and that the desorption of the CH3 from the surface is activated by the presence of As. The adsorption of triethylgallium (TEG) is inhibited on a CH3-terminated surface whereas TEG is decomposed both on As-rich and on Ga-rich surfaces. The effect of CH3 termination is highlighted by the complete inhibition of triethylaluminum decomposition when it is introduced together with TMG.

  18. Direct electron beam writing of gallium oxide on GaAs(111) As surfaces

    NASA Astrophysics Data System (ADS)

    Alonso, M.; Sacedón, J. L.; Soria, F.

    1984-07-01

    In this letter we show the possibility of a direct electron beam writing on GaAs (111) As by electron stimulated oxidation. An estimate of the writing velocity is also given. The analysis of the profiles of the oxide spots by Auger spectroscopy indicates the stability of the gallium oxide formed, and the post-oxidation formation of an As-rich interface.

  19. Polymethacrylate monolithic columns for hydrophilic interaction liquid chromatography prepared using a secondary surface polymerization.

    PubMed

    Currivan, Sinéad; Macak, Jan M; Jandera, Pavel

    2015-07-10

    Zwitterionic methacrylate based polymeric monolithic columns were prepared in two-step polymerizations, with reduced polymerization times. Characteristic properties such as hydrodynamic permeability, porosity, retention factors, and pore size distribution charts were used for column evaluation. A scaffold column was fabricated by polymerization of poly(lauryl methacrylate-co-tetraethyleneglycol dimethacrylate) and was used without further modification as a support for a poly(N,N-dimethyl-N-methacryloxyethyl-N-(3-sulfopropyl)ammonium betaine-co-bisphenol A glycerolate dimethacrylate) second monolith layer with zwitterionic functionality, for HILIC separations. An additional internal structure was formed by the second monolithic layer. The fabrication procedure was reproducible with RSD<5%. Field emission scanning electron microscopy has also been used to investigate column pore morphology, using a novel technique where the polymeric material is imaged directly, without coverage with a conducting film or particles. The new polar monolithic columns were used for HILIC separations of phenolic acids, flavones, nucleosides, and bases of nucleic acids, with similar efficiencies but different selectivities for zwitterionic methacrylate monolithic columns recently prepared by single step polymerization. PMID:26022313

  20. INSTRUMENTS AND METHODS OF INVESTIGATION: Atomic structures on a GaAs(001) surface grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bakhtizin, Raouf Z.; Hashizume, T.; Xue, Qi-Kun; Sakurai, Toshio

    1997-11-01

    A unique apparatus for in-situ atomic-resolution study of solid state structures grown by molecular beam epitaxy (MBE) is developed, in which a scanning tunneling microscope (STM) is combined with an MBE chamber within the same vacuum system. The utility of the apparatus is demonstrated by examining atomic structures on a molecular-beam-epitaxial GaAs(001) surface over a wide range of [As]/[Ga] ratios. By varying the As surface coverage, the 2×4 - α, β, γ and c(4×4) phases are examined in detail. High-resolution STM images indicate that 2×4 - α, β, and γ phases in the outermost surface layer have essentially the same unit cell consisting of two As dimers and two As dimer vacancies. Using the STM images, reflection high-energy electron diffraction (RHEED) patterns and dynamical RHEED calculations, the existing structural models for the 2×4 phases are analysed and a new model of the As-rich GaAs(001) surface is proposed, found to be consistent with most of the previous observations.

  1. Submilliampere continuous-wave room-temperature lasing operation of a GaAs mushroom structure surface-emitting laser

    SciTech Connect

    Yang, Y.J.; Dziura, T.G.; Wang, S.C. ); Hsin, W.; Wang, S. Electronics Research Laboratory, University of California, Berkeley, California 94720 )

    1990-05-07

    We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2--0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2--4 {mu}m diameter active region formed by chemical selective etching, and sandwiched between two Al{sub 0.05}Ga{sub 0.95} As/ Al{sub 0.53}Ga{sub 0.47} As distributed Bragg reflectors of very high reflectivity (98--99%) grown by metalorganic chemical vapor deposition.

  2. Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces

    SciTech Connect

    Nemcsics, Akos; Takacs, Jenoe

    2011-01-15

    This paper describes a study of the reflection high energy electron diffraction intensity change against temperature for GaAs and InAs surfaces. The reflection high energy electron diffraction intensity variation against temperature shows different hysteretic characters for the two materials. To date, the explanations for these phenomena were also different for the two substances. Here, we put forward an explanation for these hysteretic phenomena in general terms, applicable to both materials by using the hyperbolic model of hysteresis for coupled systems. Experimental results presented in the paper are in good agreement with the model predictions, supporting the proposed common explanation.

  3. Laser-driven growth of silver nanoplates on p-Type GaAs substrates and their surface-enhanced raman scattering activity.

    SciTech Connect

    Sun, Y.; Pelton, M.

    2009-03-20

    Contact between aqueous solutions of silver nitrate (AgNO{sub 3}) and pristine surfaces of p-type gallium arsenide (GaAs) wafers results in essentially no reaction at room temperature and in the dark. The galvanic reactions between the GaAs wafers and AgNO{sub 3} can be triggered under illumination of laser beams with power densities higher than a critical value ({approx}15 mW/cm{sup 2} for a 630 nm laser), resulting in the growth of silver (Ag) nanoplates on the GaAs surface. The density and dimensions (including both thickness and edge length) of the resulting nanoplates can be readily tuned by controlling the growth time and laser power density. The as-grown Ag nanoplates on the substrates significantly enhance Raman signals of interesting molecules and serve as a new class of promising surface-enhanced Raman scattering substrates for sensitive chemical detection.

  4. On the use of a O 2:SF 6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

    NASA Astrophysics Data System (ADS)

    Desplats, O.; Gallo, P.; Doucet, J. B.; Monier, G.; Bideux, L.; Jalabert, L.; Arnoult, A.; Lacoste, G.; Armand, C.; Voillot, F.; Fontaine, C.

    2009-01-01

    Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O 2SF 6 microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O 2SF 6 plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer-epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.

  5. Etching reaction of methylchloride molecule on the GaAs (0 0 1)-2 × 4 surface

    NASA Astrophysics Data System (ADS)

    Ozeki, M.; Iwasa, Y.; Shimizu, Y.

    2007-04-01

    Adsorption process of methylchloride (CH 3Cl) on the GaAs (0 0 1)-2 × 4 surface was studied by a scanning tunnelling microscopy (STM) measurement. The arsenic rich 2 × 4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed to a supersonic molecular beam of CH 3Cl with a kinetic energy of 0.06 eV. New bright spots appeared on the CH 3Cl exposed surface. They were largely observed at the "B-type" step edge and divided into two types according to their locations. It was suggested that new spots were due to weakly adsorbed CH 3Cl molecules without any dissociation. The adsorption mechanism of CH 3Cl molecule was also studied by an ab initio Hartree-Fock calculation, which explained the experimental results well.

  6. XPS study of the O 2/SF 6 microwave plasma oxidation of (0 0 1) GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Monier, G.; Bideux, L.; Desplats, O.; Fontaine, C.; Robert-Goumet, C.; Gruzza, B.

    2009-10-01

    O 2SF 6 plasma effects on processed GaAs surfaces have been investigated. The influence of plasma parameters such as composition, power and exposure time has been studied. The microwave plasma treatment efficiency has been studied by surface depth profiling (cycles consisting of XPS measurements followed by a slight etching) coupled with an original modelling calculation. We have pointed out that SF 6 addition in plasma increases the oxidative rule of oxygen by increasing the total oxide thickness and that the quantity of the different oxidative and passivating species does not limit the oxidative mechanism, in the O 2:SF 6 ratio range 80:20 to 40:60. The increase in the plasma power leads to a change in the composition of the outer region of the oxide layer with an increase in the gallium content on the surface, and to an increase in the total oxide layer. The exposure time to the plasma increases also these two phenomena.

  7. Monolithic cascade-type solar cells

    NASA Technical Reports Server (NTRS)

    Yamamoto, S.; Shibukawa, A.; Yamaguchi, M.

    1985-01-01

    Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

  8. Investigation of ultrafast photothermal surface expansion and diffusivity in GaAs via laser-induced dynamic gratings

    SciTech Connect

    Pennington, D.M.

    1992-04-01

    This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, D{sub S}. By varying the fringe spacing of the grating, this technique has the potential to separate the signal contributions to the expansion of the lattice in the perpendicular and parallel directions. In the data presented here a large fringe spacing was used, thus the dominant contribution to the rising edge of the signal was expansion perpendicular to the surface. Comparison of he results with a straightforward thermal model yields good agreement over a range of temperatures (20--300{degrees}K). Values for D{sub S} in GaAs were measured and found to be in reasonable agreement with bulk values above 50{degrees}K. Below 50{degrees}K, D{sub S} were determined to be up to an order of magnitude slower than the bulk diffusivity due to increased phonon boundary scattering. The applicability and advantages of the TG technique for studying photothermal and photoacoustic phenomena are discussed.

  9. Epitaxial ferromagnetic Fe{sub 3}Si on GaAs(111)A with atomically smooth surface and interface

    SciTech Connect

    Liu, Y. C.; Hung, H. Y.; Kwo, J. E-mail: raynien@phys.nthu.edu.tw; Chen, Y. W.; Lin, Y. H.; Cheng, C. K.; Hong, M. E-mail: raynien@phys.nthu.edu.tw; Tseng, S. C.; Hsu, C. H. E-mail: raynien@phys.nthu.edu.tw; Chang, M. T.; Lo, S. C.

    2015-09-21

    Single crystal ferromagnetic Fe{sub 3}Si(111) films were grown epitaxially on GaAs(111)A by molecular beam epitaxy. These hetero-structures possess extremely low surface roughness of 1.3 Å and interfacial roughness of 1.9 Å, measured by in-situ scanning tunneling microscope and X-ray reflectivity analyses, respectively, showing superior film quality, comparing to those attained on GaAs(001) in previous publications. The atomically smooth interface was revealed by the atomic-resolution Z (atomic number)-contrast scanning transmission electron microscopy (STEM) images using the correction of spherical aberration (Cs)-corrected electron probe. Excellent crystallinity and perfect lattice match were both confirmed by high resolution x-ray diffraction. Measurements of magnetic property for the Fe{sub 3}Si/GaAs(111) yielded a saturation moment of 990 emu/cm{sup 3} with a small coercive field ≤1 Oe at room temperature.

  10. Formation of super'' As-rich GaAs(100) surfaces by high temperature exposure to arsine

    SciTech Connect

    Banse, B.A.; Creighton, J.R. )

    1992-02-17

    We report that arsine exposures between 100 and 350 {degree}C will produce super'' As-rich surfaces (arsenic coverages of up to {similar to}1.7 monolayers (ML, where 1 ML=6.26{times}10{sup 14} atoms cm{sup {minus}2})) of GaAs(100) that exhibit a {ital c}(4{times}4) low energy electron diffraction pattern. Temperature programmed desorption studies show that after AsD{sub 3} exposures of up to 2.6{times}10{sup 6} L (1 L=1{times}10{sup {minus}6} Torr s) to the Ga-stabilized surface, three excess As desorption speaks are observed with maxima at 440, 480, and 570 {degree}C. As{sub 4} desorption is detected from the lowest temperature state, while the other states desorb primarily as As{sub 2}. The significance of these results for the understanding of the atomic layer epitaxy process is addressed.

  11. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  12. Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers

    SciTech Connect

    Zhuravlev, A. G.; Savchenko, M. L.; Paulish, A. G.; Alperovich, V. L.; Scheibler, H. E.; Jaroshevich, A. S.

    2013-12-04

    The dosage dependences of surface band bending and effective electron affinity under cesium deposition on the Ga-rich GaAs(001) surface, along with the relaxation of these electronic properties after switching off the Cs source are experimentally studied by means of modified photoreflectance spectroscopy and photoemission quantum yield spectroscopy. At small Cs coverages, below half of a monolayer, additional features in the dosage dependence and subsequent downward relaxation of the photoemission current are determined by the variations of band bending. At coverages above half of a monolayer the upward relaxation of the photocurrent is caused supposedly by the decrease of the electron affinity due to restructuring in the nonequilibrium cesium overlayer.

  13. Accelerated colorimetric immunosensing using surface-modified porous monoliths and gold nanoparticles

    NASA Astrophysics Data System (ADS)

    Chuag, Shao-Hsuan; Chen, Guan-Hua; Chou, Hsin-Hao; Shen, Shu-Wei; Chen, Chien-Fu

    2013-08-01

    A rapid and sensitive immunoassay platform integrating polymerized monoliths and gold nanoparticles (AuNPs) has been developed. The porous monoliths are photopolymerized in situ within a silica capillary and serve as solid support for high-mass transport and high-density capture antibody immobilization to create a shorter diffusion length for antibody-antigen interactions, resulting in a rapid assay and low reagent consumption. AuNPs are modified with detection antibodies and are utilized as signals for colorimetric immunoassays without the need for enzyme, substrate and sophisticated equipment for quantitative measurements. This platform has been verified by performing a human IgG sandwich immunoassay with a detection limit of 0.1 ng ml-1. In addition, a single assay can be completed in 1 h, which is more efficient than traditional immunoassays that require several hours to complete.

  14. GaAs optoelectronic neuron arrays

    NASA Technical Reports Server (NTRS)

    Lin, Steven; Grot, Annette; Luo, Jiafu; Psaltis, Demetri

    1993-01-01

    A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

  15. Picosecond surface restricted transient grating studies of carrier reaction dynamics at n -GaAs(100) interfaces

    SciTech Connect

    Gomez-Jahn, L.A.; Miller, R.J.D. )

    1992-03-01

    The surface restricted transient grating technique has been found to be sensitive to the Fermi level pinning surface states at the atomic interface of the native oxide layer of (100) GaAs. The sensitivity to these states is better than 10{sup {minus}4} of a monolayer. The grating signal associated with the surface states is eliminated by photoinduced removal of the oxide layer and hole transfer to Se{sup {minus}2} ions adsorbed to the surface. These results support the assignment of the signal to electronic factors associated with surface state species. The use of space charge field focusing of hole carriers to the surface has enabled a discrimination of the hole carrier reaction dynamics from those of the electron at the surface. {ital In} {ital situ} studies of interfacial hole transfer to Se{sup {minus}2} ions present at liquid junctions found the hole transfer time to be less than 30 ps. The selective quenching of the hole carrier through interfacial charge transfer has found that the hole carrier contributes to the optical dispersion in the 1 {mu} region to approximately the same extent as the electron.

  16. Effect of interaction in the Ga-As-O system on the morphology of a GaAs surface during molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Ageev, O. A.; Balakirev, S. V.; Solodovnik, M. S.; Eremenko, M. M.

    2016-05-01

    A thermodynamic analysis of processes of interphase interaction in the Ga-As-O system has been performed and their theoretical laws have been determined, taking into account nonlinear thermal physical properties of the compounds, the oxide film compositions, and modes of molecular-beam epitaxy of GaAs. The processes of interaction of the native oxide of GaAs with the substrate material and also with Ga and As4 from a vapor gaseous phase have been studied experimentally. The experimental results correlate with the results of the thermodynamic analysis. The laws of influence of the removal of the proper oxide on the evolution of the GaAs surface morphology under conditions of the molecular-beam epitaxy have been proposed.

  17. Quantitative comparison of terahertz emission from (100) InAs surfaces and a GaAs large-aperture photoconductive switch at high fluences.

    PubMed

    Reid, Matthew; Fedosejevs, Robert

    2005-01-01

    InAs has previously been reported to be an efficient emitter of terahertz radiation at low excitation fluences by use of femtosecond laser pulses. The scaling and saturation of terahertz emission from a (100) InAs surface as a function of excitation fluence is measured and quantitatively compared with the emission from a GaAs large-aperture photoconductive switch. We find that, although the instantaneous peak radiated terahertz field from (100) InAs exceeds the peak radiated signals from a GaAs large-aperture photoconductive switch biased at 1.6 kV/cm, the pulse duration is shorter. For the InAs source the total energy radiated is less than can be obtained from a GaAs large-aperture photoconductive switch. PMID:15662896

  18. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100) Surfaces

    PubMed Central

    2008-01-01

    Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100) substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures. PMID:20596345

  19. Carbon xerogel microspheres and monoliths from resorcinol-formaldehyde mixtures with varying dilution ratios: preparation, surface characteristics, and electrochemical double-layer capacitances.

    PubMed

    Zapata-Benabithe, Zulamita; Carrasco-Marín, Francisco; de Vicente, Juan; Moreno-Castilla, Carlos

    2013-05-21

    Carbon xerogels in the form of microspheres and monoliths were obtained from the sol-gel polymerization of resorcinol and formaldehyde in the presence of potassium carbonate as catalyst, using water as solvent and two different molar dilution ratios. The objectives of this study were as follows: to investigate the effect of the dilution ratio, polymerization reaction time, and temperature on the rheological properties of the sols used to prepare the carbon xerogel microspheres and monoliths; and to determine the influence of their preparation methods and shapes on their surface characteristics and electrochemical double-layer (EDL) capacitance. An increase in the molar dilution ratio produced a decrease in the apparent activation energy of the sol-gel transition. Carbon xerogel microspheres were steam-activated at different burnoff percentages. The morphology, surface area, porosity, and surface chemistry of samples were determined. The main difference between the carbon xerogel microspheres and monoliths was that the latter are largely mesoporous. Better electrochemical behavior was shown by carbon xerogels in monolith than in microsphere form, but higher gravimetric and volumetric capacitances were found in activated carbon xerogel microspheres than in carbon xerogel monoliths. PMID:23617279

  20. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    SciTech Connect

    He, Yunrui; Wang, Jun Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  1. Evaluation of modulating field of photoreflectance of surface-intrinsic-n+ type doped GaAs by using photoinduced voltage

    NASA Astrophysics Data System (ADS)

    Lee, W. Y.; Chien, J. Y.; Wang, D. P.; Huang, K. F.; Huang, T. C.

    2002-04-01

    Photoreflectance (PR) of surface-intrinsic-n+ type doped GaAs has been measured for various power densities of pump laser. The spectra exhibited many Franz-Keldysh oscillations, whereby the strength of electric field F in the undoped layer can be determined. The thus obtained Fs are subject to photovoltaic effect and are less than built-in field Fbi. In the previous work we have obtained the relation F≈Fbi-δF/2 when δF≪Fbi by using electroreflectance to simulate PR, where δF is the modulating field of the pump beam. In this work a method was devised to evaluate δF by using photoinduced voltages Vs and, hence, the relation can be verified by PR itself. The δFs obtained by Vs are also consistent with those of using imaginary part of fast Fourier transform of PR spectra.

  2. Role of deep-level trapping on the surface photovoltage of semi-insulating GaAs

    NASA Astrophysics Data System (ADS)

    Liu, Qiang; Ruda, Harry E.

    1997-04-01

    Dual-beam (bias and probe) transient surface photovoltage (SPV) measurements were made on undoped semi-insulating GaAs over an extended temperature range. Above 270 K, SPV recovery transients following a bias pulse were shown to reflect near-surface conductivity changes; these are in turn controlled by surface-interface-state thermal emission. Owing to the absence of a strong surface electric field in this material, the emitted carriers are not immediately removed from the near-surface region. The recapturing of the emitted carriers is shown to be responsible for nonexponential conductivity and reciprocal-SPV transients. This behavior is considered to be characteristic of relaxation-type semiconductors with near-surface ungated structures. Below 150 K, the photoinduced transition of EL2 from its ground to metastable state EL2 was shown to change the effective electron and hole mobilities and augment the SPV signals immediately following the bias pulse. Thermally induced EL2 recovery above 120 K decreases the SPV signal from its maximum. This decay transient was analyzed and the decay rate fitted to a single exponential. An activation energy of 0.32 eV and a preexponential constant of 1.9×1012 s-1 were obtained, and attributed to the thermal recovery rate for EL2.

  3. Monolithic Domes.

    ERIC Educational Resources Information Center

    Lanham, Carol

    2002-01-01

    Describes how the energy savings, low cost, and near-absolute protection from tornadoes provided by monolithic domes is starting to appeal to school districts for athletic and other facilities, including the Italy (Texas) Independent School District. Provides an overview of monolithic dome construction. (EV)

  4. High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment

    NASA Astrophysics Data System (ADS)

    Liu, Chao-Wen; Xu, Jing-Ping; Liu, Lu; Lu, Han-Han

    2015-12-01

    High-k gate dielectric HfTiON GaAs metal-oxide-semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or N2-plasma surface pretreatment are fabricated, and their interfacial and electrical properties are investigated and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that good interface quality and excellent electrical properties can be achieved for a NH3-plasma pretreated GaAs MOS device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact that the NH3-plasma can provide H atoms and NH radicals that can effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being in-diffused, and Ga and As atoms from being out-diffused from the substrate to the high-k dielectric. This greatly suppresses the formation of Ga/As native oxides and gives rise to an excellent high-k/GaAs interface. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112).

  5. Chemotaxis for enhanced immobilization of Escherichia coli and Legionella pneumophila on biofunctionalized surfaces of GaAs.

    PubMed

    Hassen, Walid M; Sanyal, Hashimita; Hammood, Manar; Moumanis, Khalid; Frost, Eric H; Dubowski, Jan J

    2016-06-01

    The authors have investigated the effect of chemotaxis on immobilization of bacteria on the surface of biofunctionalized GaAs (001) samples. Escherichia coli K12 bacteria were employed to provide a proof-of-concept of chemotaxis-enhanced bacterial immobilization, and then, these results were confirmed using Legionella pneumophila. The recognition layer was based on a self-assembled monolayer of thiol functionalized with specific antibodies directed toward E. coli or L. pneumophila, together with the enzyme beta-galactosidase (β-gal). The authors hypothesized that this enzyme together with its substrate lactose would produce a gradient of glucose which would attract bacteria toward the biochip surface. The chemotaxis effect was monitored by comparing the number of bacteria bound to the biochip surface with and without attractant. The authors have observed that β-gal plus lactose enhanced the immobilization of bacteria on our biochips with a higher effect at low bacterial concentrations. At 100 and 10 bacteria/ml, respectively, for E. coli and L. pneumophila, the authors observed up to 11 and 8 times more bacteria bound to biochip surfaces assisted with the chemotaxis effect in comparison to biochips without chemotaxis. At 10(4) bacteria/ml, the immobilization enhancement rate did not exceed two times. PMID:27098616

  6. Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs /AlAs multiple quantum wells

    NASA Astrophysics Data System (ADS)

    Čechavičius, B.; Kavaliauskas, J.; Krivaitė, G.; Seliuta, D.; Valušis, G.; Halsall, M. P.; Steer, M. J.; Harrison, P.

    2005-07-01

    We present an optical study of beryllium δ-doped GaAs /AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3to20nm and doping densities from 2×1010to5×1012cm-2 at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ˜20kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10nm. The line broadening in lightly doped QWs, thicker than 10nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures.

  7. Hydrogen storage on high-surface-area carbon monoliths for Adsorb hydrogen Gas Vehicle

    NASA Astrophysics Data System (ADS)

    Soo, Yuchoong; Pfeifer, Peter

    2014-03-01

    Carbon briquetting can increase hydrogen volumetric storage capacity by reducing the useless void volume resulting in a better packing density. It is a robust and efficient space-filling form for an adsorbed hydrogen gas vehicle storage tank. To optimize hydrogen storage capacity, we studied three fabrication process parameters: carbon-to-binder ratio, compaction temperature, and pyrolysis atmosphere. We found that carbon-to-binder ratio and pyrolysis atmosphere have influences on gravimetric excess adsorption. Compaction temperature has large influences on gravimetric and volumetric storage capacity. We have been able to optimize these parameters for high hydrogen storage. All monolith uptakes (up to 260 bar) were measured by a custom-built, volumetric, reservoir-type instrument.

  8. High-spectral-radiance, red-emitting tapered diode lasers with monolithically integrated distributed Bragg reflector surface gratings.

    PubMed

    Feise, David; John, Wilfred; Bugge, Frank; Fiebig, Christian; Blume, Gunnar; Paschke, Katrin

    2012-10-01

    A red-emitting tapered diode laser with a monolithically integrated distributed Bragg reflector grating is presented. The device is able to emit up to 1 W of spectrally stabilized optical output power at 5°C. Depending on the period of the tenth order surface grating the emission wavelengths of these devices from the same gain material are 635 nm, 637 nm, and 639 nm. The emission is as narrow as 9 pm (FWHM) at 637.6 nm. The lateral beam quality is M(2)(1/e(2)) = 1.2. Therefore, these devices simplify techniques such as wavelength multiplexing and fiber coupling dedicating them as light sources for µ-Raman spectroscopy, absolute distance interferometry, and holographic imaging. PMID:23188301

  9. Molecular self-assembly at bare semiconductor surfaces: preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001).

    PubMed

    McGuiness, Christine L; Shaporenko, Andrey; Mars, Carole K; Uppili, Sundararajan; Zharnikov, Michael; Allara, David L

    2006-04-19

    Through rigorous control of preparation conditions, organized monolayers with a highly reproducible structure can be formed by solution self-assembly of octadecanethiol on GaAs (001) at ambient temperature. A combination of characterization probes reveal a structure with conformationally ordered alkyl chains tilted on average at 14 +/- 1 degrees from the surface normal with a 43 +/- 5 degrees twist, a highly oleophobic and hydrophobic ambient surface, and direct S-GaAs attachment. Analysis of the tilt angle and film thickness data shows a significant mismatch of the average adsorbate molecule spacings with the spacings of an intrinsic GaAs(001) surface lattice. The monolayers are stable up to approximately 100 degrees C and exhibit an overall thermal stability which is lower than that of the same monolayers on Au[111] surfaces. A two-step solution assembly process is observed: rapid adsorption of molecules over the first several hours to form disordered structures with molecules lying close to the substrate surface, followed by a slow densification and asymptotic approach to final ordering. This process, while similar to the assembly of alkanethiols on Au[111], is nearly 2 orders of magnitude slower. Finally, despite differences in assembly rates and the thermal stability, exchange experiments with isotopically tagged molecules show that the octadecanethiol on GaAs(001) monolayers undergo exchange with solute thiol molecules at roughly the same rate as the corresponding exchanges of the same monolayers on Au[111]. PMID:16608359

  10. LEC GaAs for integrated circuit applications

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, C. G.; Chen, R. T.; Homes, D. E.; Asbeck, P. M.; Elliott, K. R.; Fairman, R. D.; Oliver, J. D.

    1984-01-01

    Recent developments in liquid encapsulated Czochralski techniques for the growth of semiinsulating GaAs for integrated circuit applications have resulted in significant improvements in the quality and quantity of GaAs material suitable for device processing. The emergence of high performance GaAs integrated circuit technologies has accelerated the demand for high quality, large diameter semiinsulating GaAs substrates. The new device technologies, including digital integrated circuits, monolithic microwave integrated circuits and charge coupled devices have largely adopted direct ion implantation for the formation of doped layers. Ion implantation lends itself to good uniformity and reproducibility, high yield and low cost; however, this technique also places stringent demands on the quality of the semiinsulating GaAs substrates. Although significant progress was made in developing a viable planar ion implantation technology, the variability and poor quality of GaAs substrates have hindered progress in process development.

  11. First-principles investigation of tip-surface interaction on a GaAs(110) surface: Implications for atomic force and scanning tunneling microscopies

    NASA Astrophysics Data System (ADS)

    Ke, S. H.; Uda, T.; Pérez, R.; Štich, I.; Terakura, K.

    1999-10-01

    Ab initio pseudopotential total energy techniques are used to investigate the tip-surface interaction in atomic force microscopy on a GaAs(110) surface with a Si tip. Our simulations show significant surface relaxation effects in the near contact region, which lead to a complicated behavior of the total energy and force curves. In particular, the tip-induced displacement of the Ga atoms can exceed 1 Å even in the attractive force region, leading to hysteresis in the energy and force curves. These large tip-induced relaxations of the surface Ga atoms provide a natural explanation to the simultaneous imaging of both anions and cations in recent near-contact scanning tunneling microscopy experiments on this surface. We show that, for tip-surface distances where the surface topography remains unchanged and for a charge neutral Si tip, only the anion sublattice can be resolved in noncontact atomic force microscopy. Close to contact, our simulations prove that, even for atomically sharp tips (1) there is a significant contribution to the total interaction from tip atoms different from the apex atom; (2) large lateral (bonding) forces on the tip apex may develop and change the tip structure well before significant normal repulsive forces appear.

  12. Monolithic THz Frequency Multipliers

    NASA Technical Reports Server (NTRS)

    Erickson, N. R.; Narayanan, G.; Grosslein, R. M.; Martin, S.; Mehdi, I.; Smith, P.; Coulomb, M.; DeMartinez, G.

    2001-01-01

    Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.

  13. Au and Al Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating

    SciTech Connect

    Spindt, C.J.; Yamada, M.; Meissner, P.L.; Miyano, K.E.; Herrera, A.; Spicer, W.E. . Stanford Electronics Labs.); Arko, A.J. ); Woodall, J.M.; Pettit, G.D. . Thomas J. Watson Research Center)

    1991-01-01

    Photoelectron spectroscopy has been used as a tool to investigate the initial stages of Schottky barrier formation on GaAs (100) surfaces. This is a popular technique that has been used by many researchers in the past to measure the band bending (or shift) of the valence band and conduction band (a measure of the Schottky barrier shift), while the Fermi level remains fixed at the system ground (i.e., the ground of the spectrometer). Metal deposition on a semiconductor surface can alter the Schottky barrier at the surface and pin the Fermi level near the middle of the energy gap. Extremely clean and crystallographically perfect surfaces are required in this study. Toward this end, a method of protecting the GaAs surface was employed which consists of capping the GaAs surface with a layer of As. Upon introduction into the high vacuum system the As is thermally desorbed, revealing a pure GaAs surface. Our work was motivated by a previous study (Brillson et al) on similarly capped specimens, which suggested that metal overlayers do not pin the Schottky barrier in GaAs. Barrier heights varied by as much as 0.75 eV between Al and Au overlayers. This large energy range is a striking result in view of the fact that a considerable number of prior studies on both (110) and (100) surfaces have found that all metals will pin within a narrow (0.25 eV) range at midgap. We repeated the measurements of Brillson on the identically doped samples used in their study using two extreme range metals of Au and Al as overlayers. We found that the barrier height measurements on low doped n-type samples used in this work and in the previous work are affected by photovoltaic effects, even at room temperature. This was determined from taking spectra at a number of temperatures between 20 K and room temperature and looking for shifts. 16 refs., 7 figs.

  14. Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces

    NASA Astrophysics Data System (ADS)

    Henegar, Alex J.

    Device scaling has been key for creating faster and more powerful electronic devices. Integral circuit components like the metal-oxide semiconductor field-effect transistor (MOSFET) now rely on material deposition techniques, like atomic layer deposition (ALD), that possess atomic-scale thickness precision. At the heart of the archetypal MOSFET is a SiO2/Si interface which can be formed to near perfection. However when the thickness of the SiO 2 layer is shrunk down to a few nanometers several complications arise like unacceptably high leakage current and power consumption. Replacing Si with III-V semiconductors and SiO2 with high-k dielectric materials is appealing but comes with its own set of challenges. While SiO2 is practically defect-free, the native oxides of III-Vs are poor dielectrics. In this dissertation, the surface chemistry and interface evolution during the ALD of high-k metal oxides on Si(100), GaAs(100) and InAs(100) was studied. In particular, the surface chemistry and crystallization of TiO2 films grown on Si(100) was investigated using transmission Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Large, stable, and highly reactive anatase TiO2 grains were found to form during a post-deposition heat treatment after the ALD at 100 °C. The remainder of this work was focused on the evolution of the interfacial oxides during the deposition of TiO2 and Al2O3 on InAs(100) and GaAs(100) and during the deposition of Ta2O 5 on InAs(100). In summary the ALD precursor type, deposited film, and substrate had an influence in the evolution of the native oxides. Alkyl amine precursors fared better at removing the native oxides but the deposited films (TiO2 and Ta2O5) were susceptible to significant native oxide diffusion. The alkyl precursor used for the growth of Al 2O3 was relatively ineffective at removing the oxides but was

  15. Microfluidic devices and methods including porous polymer monoliths

    DOEpatents

    Hatch, Anson V; Sommer, Gregory J; Singh, Anup K; Wang, Ying-Chih; Abhyankar, Vinay V

    2014-04-22

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  16. Microfluidic devices and methods including porous polymer monoliths

    SciTech Connect

    Hatch, Anson V.; Sommer, Gregory j.; Singh, Anup K.; Wang, Ying-Chih; Abhyankar, Vinay

    2015-12-01

    Microfluidic devices and methods including porous polymer monoliths are described. Polymerization techniques may be used to generate porous polymer monoliths having pores defined by a liquid component of a fluid mixture. The fluid mixture may contain iniferters and the resulting porous polymer monolith may include surfaces terminated with iniferter species. Capture molecules may then be grafted to the monolith pores.

  17. Planar monolithic porous polymer layers functionalized with gold nanoparticles as large-area substrates for sensitive surface-enhanced Raman scattering sensing of bacteria.

    PubMed

    Cao, Yao; Lv, Mingyang; Xu, Haijun; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2015-10-01

    For the first time, large-area surface-enhanced Raman scattering sensing active substrates using porous polymer monolithic layers have been successfully prepared. Our approach includes a simple photoinitiated polymerization process using glycidyl methacrylate and ethylene dimethacrylate in a glass mold, followed by a chemical reaction of the epoxy functionalities leading to thiols, and the attachment of preformed gold nanoparticles. We demonstrated that this very simple process produced uniform and reproducible large area surfaces that significantly enhance sensitivity of Raman spectroscopy. Experiments were also carried out that confirmed preferential adsorption of living bacteria Escherichia coli from a very dilute solution on the surface of the monolithic layer, and immediate detection of the captured microorganisms using the SERS spectrum. PMID:26481994

  18. Monolithic microwave integrated circuit technology for advanced space communication

    NASA Technical Reports Server (NTRS)

    Ponchak, George E.; Romanofsky, Robert R.

    1988-01-01

    Future Space Communications subsystems will utilize GaAs Monolithic Microwave Integrated Circuits (MMIC's) to reduce volume, weight, and cost and to enhance system reliability. Recent advances in GaAs MMIC technology have led to high-performance devices which show promise for insertion into these next generation systems. The status and development of a number of these devices operating from Ku through Ka band will be discussed along with anticipated potential applications.

  19. Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(0 0 1): Experiment and Monte Carlo simulation

    NASA Astrophysics Data System (ADS)

    Kazantsev, D. M.; Akhundov, I. O.; Shwartz, N. L.; Alperovich, V. L.; Latyshev, A. V.

    2015-12-01

    Ostwald ripening and step-terraced morphology formation on the GaAs(0 0 1) surface during annealing in equilibrium conditions are investigated experimentally and by Monte Carlo simulation. Fourier and autocorrelation analyses are used to reveal surface relief anisotropy and provide information about islands and pits shape and their size distribution. Two origins of surface anisotropy are revealed. At the initial stage of surface smoothing, crystallographic anisotropy is observed, which is caused presumably by the anisotropy of surface diffusion at GaAs(0 0 1). A difference of diffusion activation energies along [1 1 0] and [1 1 bar 0] axes of the (0 0 1) face is estimated as ΔEd ≈ 0.1 eV from the comparison of experimental results and simulation. At later stages of surface smoothing the anisotropy of the surface relief is determined by the vicinal steps direction. At the initial stage of step-terraced morphology formation the kinetics of monatomic islands and pits growth agrees with the Ostwald ripening theory. At the final stage the size of islands and pits decreases due to their incorporation into the forming vicinal steps.

  20. Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

    NASA Technical Reports Server (NTRS)

    Kashkarov, P. K.; Kazior, T. E.; Lagowski, J.; Gatos, H. C.

    1983-01-01

    An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

  1. An investigation of penetrant techniques for detection of machining-induced surface-breaking cracks on monolithic ceramics

    SciTech Connect

    Forster, G.A.; Ellingson, W.A.

    1996-02-01

    The purpose of this effort was to evaluate penetrant methods for their ability to detect surface-breaking cracks in monolithic ceramic materials with an emphasis on detection of cracks generated by machining. There are two basic penetrant types, visible and fluorescent. The visible penetrant method is usually augmented by powder developers and cracks detected can be seen in visible light. Cracks detected by fluorescent penetrant are visible only under ultraviolet light used with or without a developer. The developer is basically a powder that wicks up penetrant from a crack to make it more observable. Although fluorescent penetrants were recommended in the literature survey conducted early in this effort, visible penetrants and two non-standard techniques, a capillary gaseous diffusion method under development at the institute of Chemical Physics in Moscow, and the {open_quotes}statiflux{close_quotes} method which involves use of electrically charged particles, were also investigated. SiAlON ring specimens (1 in. diameter, 3/4 in. wide) which had been subjected to different thermal-shock cycles were used for these tests. The capillary gaseous diffusion method is based on ammonia; the detector is a specially impregnated paper much like litmus paper. As expected, visible dye penetrants offered no detection sensitivity for tight, surface-breaking cracks in ceramics. Although the non-standard statiflux method showed promise on high-crack-density specimens, it was ineffective on limited-crack-density specimens. The fluorescent penetrant method was superior for surface-breaking crack detection, but successful application of this procedure depends greatly on the skill of the user. Two presently available high-sensitivity fluorescent penetrants were then evaluated for detection of microcracks on Si{sub 3}N{sub 4} and SiC from different suppliers. Although 50X optical magnification may be sufficient for many applications, 200X magnification provides excellent delectability.

  2. Monolithic arrays of grating-surface-emitting diode lasers and quantum well modulators for optical communications

    NASA Technical Reports Server (NTRS)

    Carlson, N. W.; Evans, G. A.; Liew, S. K.; Kaiser, C. J.

    1990-01-01

    The electro-optic switching properties of injection-coupled coherent 2-D grating-surface-emitting laser arrays with multiple gain sections and quantum well active layers are discussed and demonstrated. Within such an array of injection-coupled grating-surface-emitting lasers, a single gain section can be operated as intra-cavity saturable loss element that can modulate the output of the entire array. Experimental results demonstrate efficient sub-nanosecond switching of high power grading-surface-emitting laser arrays by using only one gain section as an intra-cavity loss modulator.

  3. Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization

    NASA Astrophysics Data System (ADS)

    Tomita, Masafumi; Mizuno, Yosuke; Takakura, Hiroyuki; Kambayashi, Daisuke; Naritsuka, Shigeya; Maruyama, Takahiro

    2016-04-01

    Surface supersaturation in microchannel epitaxy (MCE) by liquid-phase epitaxy is a key parameter to control the width-to-thickness ratio (aspect ratio), which determines the dimensions of the dislocation-free area. The interstep distance of a spiral step at a screw-dislocation and curve-fitting of screw-like steps at stacking faults (SFs) are employed to estimate the surface supersaturation during MCE. The dependence of the vertical growth rate on the surface supersaturation was experimentally studied in GaAs(001) MCE. As a result, 2D nucleation at SFs was determined to act as a strong step source, which is stronger than a typical spiral step at a screw-dislocation over a wide range of surface supersaturation. Precise control of the surface supersaturation is important to optimize the growth conditions for MCE. An MCE layer with a large aspect ratio can thus be reproducibly obtained using appropriately controlled surface supersaturation.

  4. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, Gregory A.

    1994-01-01

    A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

  5. Monolithic high voltage nonlinear transmission line fabrication process

    DOEpatents

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  6. Monolithic nanoporous gold disks with large surface area and high-density plasmonic hot-spots

    NASA Astrophysics Data System (ADS)

    Zhao, Fusheng; Zeng, Jianbo; Arnob, Md Masud Parvez; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to enhancement of the local electric field by light-excited surface plasmons, the collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3- dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks (NPGDs) not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interaction as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of NPGD can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. The coupling between external and internal nanoarchitecture provides a potential design dimension for plasmonic engineering. The synergy of large specific surface area, high-density hot spots, and tunable plasmonics would profoundly impact applications where plasmonic nanoparticles and non-plasmonic mesoporous nanoparticles are currently employed, e.g., in in-vitro and in-vivo biosensing, molecular imaging, photothermal contrast agents, and molecular cargos.

  7. Synthesis of robust hierarchical silica monoliths by surface-mediated solution/precipitation reactions over different scales: designing capillary microreactors for environmental applications.

    PubMed

    García-Aguilar, J; Miguel-García, I; Berenguer-Murcia, Á; Cazorla-Amorós, D

    2014-12-24

    A synthetic procedure to prepare novel materials (surface-mediated fillings) based on robust hierarchical monoliths is reported. The methodology includes the deposition of a (micro- or mesoporous) silica thin film on the support followed by growth of a porous monolithic SiO2 structure. It has been demonstrated that this synthesis is viable for supports of different chemical nature with different inner diameters without shrinkage of the silica filling. The formation mechanism of the surface-mediated fillings is based on a solution/precipitation process and the anchoring of the silica filling to the deposited thin film. The interaction between the two SiO2 structures (monolith and thin film) depends on the porosity of the thin film and yields composite materials with different mechanical stability. By this procedure, capillary microreactors have been prepared and have been proved to be highly active and selective in the total and preferential oxidation of carbon monoxide (TOxCO and PrOxCO). PMID:25419612

  8. Effect of chemical surface treatments on non-native (Bi/sub 2/O/sub 3/) GaAs metal-insulator-semiconductor solar cells

    SciTech Connect

    Wang, E.Y.; Pandelisev, K.A.

    1981-07-01

    GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi/sub 2/O/sub 3/ interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi/sub 2/O/sub 3/ showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ''textured'' surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.

  9. Evaluation of the minority carrier diffusion length and surface-recombination velocity in GaAs p/n solar cells

    NASA Technical Reports Server (NTRS)

    Hakimzadeh, Roshanak; Moeller, Hans J.; Bailey, Sheila

    1991-01-01

    The minority carrier diffusion length (Lp) and the surface recombination velocity (Vs) were measured as a function of distance (x) from the p-n junction in GaAs p/n concentrator solar cells. The measured Vs values were used in a theoretical expression for the normalized electron-beam-induced current. A fitting procedure was then used to fit this expression with experimental values to obtain Lp. The results show that both Vs and Lp vary with x. Lp measured in irradiated cells showed a marked reduction. These values were compared to those measured previously which did not account for Vs.

  10. Porous polymer monoliths: Preparation of sorbent materials with high-surface areas and controlled surface chemistry for high-throughput, online, solid-phase extraction of polar organic compounds

    SciTech Connect

    Xie, S.; Svec, F.; Frechet, J.M.J.

    1998-12-01

    Porous monolithic materials with high surface areas have been prepared from commercial 80% divinylbenzene. The pore properties of these materials are controlled by the type and composition of the porogenic solvent and by the percentage of cross-linking monomer (divinylbenzene) in the polymerization mixture. Surface area was found to increase with the divinylbenzene content of the monolith. Using high-grade divinylbenzene and a suitable porogenic solvent, monolithic materials with specific surface areas as high as 400 m{sup 2}/g yet still permeable to liquids at reasonable back pressure were obtained for the first time. A macroporous material with hydrodynamic properties optimized for solid-phase extraction has been designed and its permeability and adsorption ability was demonstrated by adsorbing phenols at flow velocities that exceed those of current materials by a factor of 30. A unique set of polymerization conditions had to be developed to allow the incorporation of polar 2-hydroxylethyl methacrylate into the hydrophobic nonpolar backbone of the divinylbenzene monolithic material. This improves wettability while high-flow properties are maintained and unusually high recoveries of polar compounds are allowed.

  11. RF characterization of monolithic microwave and mm-wave ICs

    NASA Technical Reports Server (NTRS)

    Romanofsky, R. R.; Ponchak, G. E.; Shalkhauser, K. A.; Bhasin, K. B.

    1986-01-01

    A number of fixturing techniques compatible with automatic network analysis are presented. The fixtures are capable of characterizing GaAs Monolithic Microwave Integrated Circuits (MMICs) at K and Ka band. Several different transitions are used to couple the RF test port to microstrip. Fixtures which provide chip level de-embedding are included. In addition, two advanced characterization techniques are assessed.

  12. Monolithic ceramics

    NASA Technical Reports Server (NTRS)

    Herbell, Thomas P.; Sanders, William A.

    1992-01-01

    A development history and current development status evaluation are presented for SiC and Si3N4 monolithic ceramics. In the absence of widely sought improvements in these materials' toughness, and associated reliability in structural applications, uses will remain restricted to components in noncritical, nonman-rated aerospace applications such as cruise missile and drone gas turbine engine components. In such high temperature engine-section components, projected costs lie below those associated with superalloy-based short-life/expendable engines. Advancements are required in processing technology for the sake of fewer and smaller microstructural flaws.

  13. Optical detectors for GaAs MMIC integration: Technology assessment

    NASA Technical Reports Server (NTRS)

    Claspy, P. C.; Bhasin, K. B.

    1989-01-01

    Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

  14. Towards monolithic integration of mode-locked vertical cavity surface emitting laser

    NASA Astrophysics Data System (ADS)

    Aldaz, Rafael I.

    2007-12-01

    The speed and performance of today's high end computing and communications systems have placed difficult but still feasible demands on off-chip electrical interconnects. However, future interconnect systems may need aggregate bandwidths well into the terahertz range thereby making electrical bandwidth, density, and power targets impossible to meet. Optical interconnects, and specifically compact semiconductor mode-locked lasers, could alleviate this problem by providing short pulses in time at 10s of GHz repetition rates for Optical Time Division Multiplexing (OTDM) and clock distribution applications. Furthermore, the characteristic spectral comb of frequencies of these lasers could also serve as a multi-wavelength source for Wavelength Division Multiplexing (WDM) applications. A fully integrated mode-locked Vertical Cavity Surface Emitting Laser (VCSEL) is proposed as a low-cost high-speed source for these applications. The fundamental laser platform for such a device has been developed and a continuous-wave version of these lasers has been fabricated and demonstrated excellent results. Output powers close to 60mW have been obtained with very high beam quality factor of M2 < 1.07. The mode-locked laser utilizes a passive mode-locking region provided by a semiconductor saturable absorber integrated together with the gain region. Such an aggressive integration forces the resonant beam in the cavity to have the same area on the gain and absorber sections, placing high demands on the saturation fluence and absorption coefficient for the saturable absorber. Quantum Wells (QWs), excitons in QWs and Quantum Dots (QDs) have been investigated as possible saturable absorbers for the proposed device. QDs have been found to have the lowest saturation fluence and total absorption, necessary to meet the mode-locking requirements for this configuration. The need to further understand QDs as saturable absorbers has led to the development of a theoretical model on the dynamics of

  15. Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time

    NASA Astrophysics Data System (ADS)

    Lee, Daewoo; Li, Ming-Yu; Sui, Mao; Zhang, Quanzhen; Pandey, Puran; Kim, Eun-Soo; Lee, Jihoon

    2015-05-01

    Metallic nanoparticles have been widely witnessed in many applications: serving as the catalysts for various nanowire systems, as the active mediums of various device applications, and also for the nanoscale templates for hybrid quantum structures. In the performance of devices and configurations of the resulting nanostructures, the size and density of nanoparticles play critical roles. In this paper, the control of self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Based on the Volmer-Weber growth model, the formation of Au droplets and dramatic evolution of Au nanostructures on various GaAs surfaces is observed from the Au clusters to the round-dome shapes with the AT variation between 250 and 550 °C. With the systematic DA control, a radical size and density evolution of Au droplets shows the size expansion of over 400 % in average height and 800 % in average lateral diameter, while the density shows over two orders of decrease. With the DT variation, the self-assembled Au droplets tend to grow larger due to the Ostwald ripening while a clear distinction among the surface indexes is observed.

  16. Observation of Shape, Configuration, and Density of Au Nanoparticles on Various GaAs Surfaces via Deposition Amount, Annealing Temperature, and Dwelling Time.

    PubMed

    Lee, Daewoo; Li, Ming-Yu; Sui, Mao; Zhang, Quanzhen; Pandey, Puran; Kim, Eun-Soo; Lee, Jihoon

    2015-12-01

    Metallic nanoparticles have been widely witnessed in many applications: serving as the catalysts for various nanowire systems, as the active mediums of various device applications, and also for the nanoscale templates for hybrid quantum structures. In the performance of devices and configurations of the resulting nanostructures, the size and density of nanoparticles play critical roles. In this paper, the control of self-assembled Au droplets on GaAs (100), (110), and (111) is systematically investigated through the variation of deposition amount (DA), annealing temperature (AT), and dwelling time (DT). Based on the Volmer-Weber growth model, the formation of Au droplets and dramatic evolution of Au nanostructures on various GaAs surfaces is observed from the Au clusters to the round-dome shapes with the AT variation between 250 and 550 °C. With the systematic DA control, a radical size and density evolution of Au droplets shows the size expansion of over 400 % in average height and 800 % in average lateral diameter, while the density shows over two orders of decrease. With the DT variation, the self-assembled Au droplets tend to grow larger due to the Ostwald ripening while a clear distinction among the surface indexes is observed. PMID:26055482

  17. Monolithic tandem solar cell

    DOEpatents

    Wanlass, M.W.

    1994-06-21

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

  18. Monolithic tandem solar cell

    DOEpatents

    Wanlass, Mark W.

    1991-01-01

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

  19. Reflection Properties of Metallic Gratings on ZnO Films over GaAs Substrates

    NASA Technical Reports Server (NTRS)

    Hickernell, Fred S.; Kim, Yoonkee; Hunt, William D.

    1994-01-01

    A potential application for piezoelectric film deposited on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Metallic gratings are basic elements required for the construction of such devices, and analyzing the reflectivity and the velocity change due to metallic gratings is often a critical design parameter. In this article, Datta and Hunsinger technique is extended to the case of a multilayered structure, and the developed technique is applied to analyze shorted and open gratings on ZnO films sputtered over (001)-cut (110)-propagating GaAs substrates. The analysis shows that zero reflectivity of shorted gratings can be obtained by a combination of the ZnO film and the metal thickness and the metalization ratio of the grating. Experiments are performed on shorted and an open gratings (with the center frequency of about 180 MHz) for three different metal thicknesses over ZnO films which are 0.8 and 2.6 micrometers thick. From the experiments, zero reflectivity at the resonant frequency of the grating is observed for a reasonable thickness (h/Alpha = 0.5%) of aluminum metalization. The velocity shift between the shorted and the open grating is also measured to be 0.18 MHz and 0.25 MHz for 0.8 and 1.6 micrometers respectively. The measured data show relatively good agreement with theoretical predictions.

  20. Monolith electroplating process

    DOEpatents

    Agarrwal, Rajev R.

    2001-01-01

    An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs. Then as micropores also close (23) by surface tension, metal density is reached and the film consists of unstable metal grain (24) that at high enough temperature recrystallize (25) and recrystallized grains grow into an annealed single crystal over the electroplating time span. While cadmium was used in the experimental work, other soft metals may be used.

  1. Monolithic catalytic igniters

    NASA Technical Reports Server (NTRS)

    La Ferla, R.; Tuffias, R. H.; Jang, Q.

    1993-01-01

    Catalytic igniters offer the potential for excellent reliability and simplicity for use with the diergolic bipropellant oxygen/hydrogen as well as with the monopropellant hydrazine. State-of-the-art catalyst beds - noble metal/granular pellet carriers - currently used in hydrazine engines are limited by carrier stability, which limits the hot-fire temperature, and by poor thermal response due to the large thermal mass. Moreover, questions remain with regard to longevity and reliability of these catalysts. In this work, Ultramet investigated the feasibility of fabricating monolithic catalyst beds that overcome the limitations of current catalytic igniters via a combination of chemical vapor deposition (CVD) iridium coatings and chemical vapor infiltration (CVI) refractory ceramic foams. It was found that under all flow conditions and O2:H2 mass ratios tested, a high surface area monolithic bed outperformed a Shell 405 bed. Additionally, it was found that monolithic catalytic igniters, specifically porous ceramic foams fabricated by CVD/CVI processing, can be fabricated whose catalytic performance is better than Shell 405 and with significantly lower flow restriction, from materials that can operate at 2000 C or higher.

  2. Nano-accuracy measurements and the surface profiler by use of Monolithic Hollow Penta-Prism for precision mirror testing

    NASA Astrophysics Data System (ADS)

    Qian, Shinan; Wayne, Lewis; Idir, Mourad

    2014-09-01

    We developed a Monolithic Hollow Penta-Prism Long Trace Profiler-NOM (MHPP-LTP-NOM) to attain nano-accuracy in testing plane- and near-plane-mirrors. A new developed Monolithic Hollow Penta-Prism (MHPP) combined with the advantages of PPLTP and autocollimator ELCOMAT of the Nano-Optic-Measuring Machine (NOM) is used to enhance the accuracy and stability of our measurements. Our precise system-alignment method by using a newly developed CCD position-monitor system (PMS) assured significant thermal stability and, along with our optimized noise-reduction analytic method, ensured nano-accuracy measurements. Herein we report our tests results; all errors are about 60 nrad rms or less in tests of plane- and near-plane- mirrors.

  3. First-principles study of locally disordered structures of Mn-induced GaAs(001)-(2 × 2) surface

    NASA Astrophysics Data System (ADS)

    Akaishi, Akira; Funatsuki, Kenta; Ohtake, Akihiro; Nakamura, Jun

    2016-08-01

    Various atomic arrangements of the Mn-induced GaAs(001) surface, consisting of one Ga–As dimer and one Mn atom in the (2 × 2) unit, have been investigated by first-principles calculations. The most stable arrangement is reasonable in view of the classical electrostatic theory. It has been revealed that the topmost Ga–As dimers tend to be aligned along the [1\\bar{1}0] direction, while they are less ordered along the [110] direction. These anisotropic orderings, that is, anisotropic interactions, imply that the Mn atom, which is located between the Ga–As dimers, enhances the local electrostatic interaction between the dimers along the [1\\bar{1}0] direction, as a result of the dielectric anisotropy at the surface.

  4. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  5. Electro-optic investigation of the n-alkanethiol GaAs(001) interface: Surface phenomena and applications to photoluminescence-based biosensing

    NASA Astrophysics Data System (ADS)

    Marshall, Gregory M.

    Semiconductor surfaces coupled to molecular structures derived from organic chemistry form the basis of an emerging class of field-effect devices. In addition to molecular electronics research, these interfaces are developed for a variety of sensor applications in the electronic and optical domains. Of practical interest are self-assembled monolayers (SAMs) comprised of n-alkanethiols [HS(CH2)n], which couple to the GaAs(001) surface through S-GaAs covalent bond formation. These SAMs offer potential functionality in terms of the requisite sensor chemistry and the passivation effect such coupling is known to afford. In this thesis, the SAM-GaAs interface is investigated in the context of a photonic biosensor based on photoluminescence (PL) variation. The scope of the work is categorized into three parts: i) the structural and compositional analysis of the surface using X-ray photoelectron spectroscopy (XPS), ii) the investigation of electronic properties at the interface under equilibrium conditions using infrared (IR) spectroscopy, the Kelvin probe method, and XPS, and iii) the analysis of the electro-optic response under steady-state photonic excitation, specifically, the surface photovoltage (SPV) and PL intensity. Using a partial overlayer model of angle-resolved XPS spectra in which the component assignments are shown to be quantitatively valid, the coverage fraction of methyl-terminated SAMs is shown to exceed 90%. Notable among the findings are a low-oxide, Ga-rich surface with elemental As present in sub-monolayer quantities consistent with theoretical surface morphologies. Modal analysis of transmission IR spectra show that the SAM molecular order is sufficient to support a Beer-Lambert determination of the IR optical constants, which yields the observation of a SAM-specific absorbance enhancement. By correlation of the IR absorbance with the SAM dipole layer potential, the enhancement mechanism is attributed to the vibrational moments added by the

  6. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  7. Monolithic Microwave Integrated Circuit (MMIC) technology for space communications applications

    NASA Technical Reports Server (NTRS)

    Connolly, Denis J.; Bhasin, Kul B.; Romanofsky, Robert R.

    1987-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMICs to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMICs is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. For the more distant future pseudomorphic indium gallium arsenide (InGaAs) and other advanced III-V materials offer the possibility of MMIC subsystems well up into the millimeter wavelength region. All of these technology elements are in NASA's MMIC program. Their status is reviewed.

  8. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

    PubMed

    Dalapati, G K; Chia, C K; Tan, C C; Tan, H R; Chiam, S Y; Dong, J R; Das, A; Chattopadhyay, S; Mahata, C; Maiti, C K; Chi, D Z

    2013-02-01

    High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (As(x)O(y)) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (Ga(x)O(y)) and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices. PMID:23331503

  9. Clustering effects in a low coverage deposition of gold on the GaAs( 0 0 1 )-β2(2×4) surface: an STM-UHV and theoretical study

    NASA Astrophysics Data System (ADS)

    Amore Bonapasta, A.; Scavia, G.; Buda, F.

    2002-11-01

    A comparative study of gold deposition on the GaAs(0 0 1)-β2(2×4) surface based on scanning tunneling microscopy (STM)-ultra high vacuum (UHV) and Car-Parrinello calculations has been carried out. The theoretical results show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On the other hand, STM-UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the GaAs(0 0 1)-β2(2×4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2×4) reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly interacting with the two As dimers of the GaAs unit cell. An STM-UHV analysis of the surface for a deposition >1 ML suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.

  10. Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

    PubMed Central

    2012-01-01

    We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing. PMID:22916827

  11. Monolithic freeform element

    NASA Astrophysics Data System (ADS)

    Kiontke, Sven R.

    2015-09-01

    For 10 years there has been the asphere as one of the new products to be accepted by the market. All parts of the chain design, production and measurement needed to learn how to treat the asphere and what it is helpful for. The aspheric optical element now is established and accepted as an equal optical element between other as a fast growing part of all the optical elements. Now we are focusing onto the next new element with a lot of potential, the optical freeform surface. Manufacturing results will be shown for fully tolerance optic including manufacturing, setup and optics configurations including measurement setup. The element itself is a monolith consisting of several optical surfaces that have to be aligned properly to each other. The freeform surface is measured for surface form tolerance (irregularity, slope, Zernike, PV).

  12. Novel Approach for Positioning Sensor Lead Wires on SiC-Based Monolithic Ceramic and FRCMC Components/Subcomponents Having Flat and Curved Surfaces

    NASA Technical Reports Server (NTRS)

    Kiser, J. Douglas; Singh, Mrityunjay; Lei, Jin-Fen; Martin, Lisa C.

    1999-01-01

    A novel attachment approach for positioning sensor lead wires on silicon carbide-based monolithic ceramic and fiber reinforced ceramic matrix composite (FRCMC) components has been developed. This approach is based on an affordable, robust ceramic joining technology, named ARCJoinT, which was developed for the joining of silicon carbide-based ceramic and fiber reinforced composites. The ARCJoinT technique has previously been shown to produce joints with tailorable thickness and good high temperature strength. In this study, silicon carbide-based ceramic and FRCMC attachments of different shapes and sizes were joined onto silicon carbide fiber reinforced silicon carbide matrix (SiC/ SiC) composites having flat and curved surfaces. Based on results obtained in previous joining studies. the joined attachments should maintain their mechanical strength and integrity at temperatures up to 1350 C in air. Therefore they can be used to position and secure sensor lead wires on SiC/SiC components that are being tested in programs that are focused on developing FRCMCs for a number of demanding high temperature applications in aerospace and ground-based systems. This approach, which is suitable for installing attachments on large and complex shaped monolithic ceramic and composite components, should enhance the durability of minimally intrusive high temperature sensor systems. The technology could also be used to reinstall attachments on ceramic components that were damaged in service.

  13. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study

    PubMed Central

    2013-01-01

    High-resolution synchrotron radiation photoemission was employed to study the effects of atomic-layer-deposited trimethylaluminum (TMA) and water on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces. No high charge states were found in either As 3d or Ga 3d core-level spectra before and after the deposition of the precursors. TMA adsorption does not disrupt the GaAs surface structure. For the (4 × 6) surface, the TMA precursor existed in both chemisorbed and physisorbed forms. In the former, TMA has lost a methyl group and is bonded to the As of the As-Ga dimer. Upon water purge, the dimethylaluminum-As group was etched off, allowing the now exposed Ga to bond with oxygen. Water also changed the physisorbed TMA into the As-O-Al(CH3)2 configuration. This configuration was also found in 1 cycle of TMA and water exposure of the (2 × 4) surface, but with a greater strength, accounting for the high interface defect density in the mid-gap region. PMID:23587341

  14. Monolithic afocal telescope

    NASA Technical Reports Server (NTRS)

    Roberts, William T. (Inventor)

    2010-01-01

    An afocal monolithic optical element formed of a shallow cylinder of optical material (glass, polymer, etc.) with fast aspheric surfaces, nominally confocal paraboloids, configured on the front and back surfaces. The front surface is substantially planar, and this lends itself to deposition of multi-layer stacks of thin dielectric and metal films to create a filter for rejecting out-of-band light. However, an aspheric section (for example, a paraboloid) can either be ground into a small area of this surface (for a Cassegrain-type telescope) or attached to the planar surface (for a Gregorian-type telescope). This aspheric section of the surface is then silvered to create the telescope's secondary mirror. The rear surface of the cylinder is figured into a steep, convex asphere (again, a paraboloid in the examples), and also made reflective to form the telescope's primary mirror. A small section of the rear surface (approximately the size of the secondary obscuration, depending on the required field of the telescope) is ground flat to provide an unpowered surface through which the collimated light beam can exit the optical element. This portion of the rear surface is made to transmit the light concentrated by the reflective surfaces, and can support the deposition of a spectral filter.

  15. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Bauhahn, P.; Geddes, J.; Sokolov, V.; Contolatis, T.

    1988-01-01

    The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.

  16. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    NASA Technical Reports Server (NTRS)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  17. 1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates

    NASA Astrophysics Data System (ADS)

    Ustinov, Victor M.; Zhukov, Alexey E.; Maleev, Nikolay A.; Egorov, Anton Y.; Kovsh, Alexey R.; Mikhrin, Sergei S.; Cherkashin, Nikolai A.; Shernyakov, Yuri M.; Maximov, Mikhail V.; Tsatsul'nikov, Anrei; Ledentsov, Nikolai N.; Alferov, Zhores I.; Lott, James A.; Bimberg, Dieter

    2002-06-01

    The development of 1.3 micron VCSELs is currently considered to give a strong impulse for a wide use of ultra-fast local area networks. In the present work we discuss MBE growth and characteristics of InAs/GaAs quantum dot (QD) lasers, we also give characteristics of 1.3 micron QD VCSELs grown on GaAs and compare them with those of 1.3 micron InGaAsN/GaAs QW VCSELs. Overgrowing the InAs quantum dot array with thin InGaAs layer allows us to achieve 1.3 micron emission. Long stripe lasers showed low threshold current density (<100 A/cm2), high differential efficiency (>50%), and low internal loss (1-2 cm-1). Maximum continuous wave (CW) output power for wide stripe lasers was as high as 2.7 W and 110 mW for single mode devices. Uncoated broad area lasers showed no visible degradation of characteristics during 450 hours (60C, ambient environment). 1.3 micron InGaAsN/GaAs QW VCSELs are characterized by higher optical loss and lower differential efficiency than QD VCSELs. Due to high gain in the active region QW VCSELS demonstrate high output power (1 mW). QW VCSELs show extremely low internal round-trip optical loss (<0.05%), low threshold currents (<2 mA), high differential efficiency (40%) and output power (600 microW).

  18. Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Tsuchiyama, Kazuaki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-05-01

    A Si/SiO2/GaN-light-emitting-diode (LED) wafer is proposed as a new structure for the monolithic integration of both Si circuits and GaN-based optical devices. Surface-activated bonding was performed to transfer a Si layer from a silicon-on-insulator substrate to a SiO2/GaN-LED substrate. Transmission electron microscopy observation revealed that a defect-free Si layer was formed on the SiO2/GaN-LED substrate without interfacial voids. The crystalline quality of the Si layer, which is characterized by an X-ray rocking curve, was markedly improved by flattening the SiO2/GaN-LED substrate before bonding. Finally, a micro-LED array was successfully fabricated on the Si/SiO2/GaN-LED wafer without the delamination of the Si layer.

  19. UV laser activated digital etching of GaAs

    SciTech Connect

    Meguro, T.; Aoyagi, Y.

    1996-12-31

    The self-limited etching characteristics of digital etching employing an UV laser/Cl{sub 2}/GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

  20. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  1. Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Wolan, John T.; Mount, Charles K.; Hoflund, Gar B.

    1998-03-01

    In this study a hyperthermal oxygen atom source has been used to form an oxide layer on an Ar+-sputtered GaAs(001) surface at room temperature, and this layer has been examined using x-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS). XPS data indicate that the Ga in the near-surface region is oxidized predominantly to Ga2O3 with a significant contribution from GaAsO4 while the As is oxidized predominantly to an AsOx species with significant contributions from As2O3 and GaAsO4 and/or As2O5. The oxide layer thickness is estimated to be about 25 Å, and the XPS Ga:As atom ratio increases from 1.1 to 1.6 during the oxidation. The ISS data indicate that the resulting oxide layer formed is more electrically insulating than a native oxide layer on this surface.

  2. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, Thomas C.

    1993-01-01

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  3. Monolithic dye laser amplifier

    DOEpatents

    Kuklo, T.C.

    1993-03-30

    A fluid dye laser amplifier for amplifying a dye beam by pump beams has a channel structure defining a channel through which a laseable fluid flows and the dye and pump beams pass transversely to one another through a lasing region. The channel structure is formed with two pairs of mutually spaced-apart and mutually confronting glass windows, which are interlocked and make surface-contacts with one another and surround the lasing region. One of the glass window pairs passes the dye beam and the other passes the pump beams therethrough and through the lasing region. Where these glass window pieces make surface-contacts, glue is used to join the pieces together to form a monolithic structure so as to prevent the dye in the fluid passing through the channel from entering the space between the mutually contacting glass window pieces.

  4. Microfluidic surface-enhanced Raman scattering sensor with monolithically integrated nanoporous gold disk arrays for rapid and label-free biomolecular detection

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhao, Fusheng; Zeng, Jianbo; Qi, Ji; Lu, Jing; Shih, Wei-Chuan

    2014-11-01

    We present a microfluidic surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection. Our sensor design mitigates a common limiting factor in microfluidic SERS sensors that utilize integrated nanostructures: low-efficiency transport of biomolecules to nanostructured surface which adversely impacts sensitivity. Our strategy is to increase the total usable nanostructured surface area, which provides more adsorption sites for biomolecules. Specifically, a nanoporous gold disk (NPGD) array, a highly effective SERS substrate, has been monolithically integrated inside a microfluidic chip. Individual NPGD is known to feature an order of magnitude larger surface area than its projected disk area. The increased surface area arises from nanoscale pores and ligaments three-dimensionally distributed in the NPGD, which manifest themselves as high-density SERS hot-spots. High-density NPGD arrays further guarantee large coverage of these hot-spots on the microchannel floor. The sensor performance has been demonstrated using Rhodamine 6G to quantify spatial uniformity and determine the shortest detection time. Next, the sensor is applied to detect two biomolecules, dopamine and urea, with unprecedented detection limit and speed compared to other existing microfluidic SERS sensors. The sensor holds great promise in point-of-care applications for various biomolecular detections.

  5. Polymer network/carbon layer on monolith support and monolith catalytic reactor

    DOEpatents

    Nordquist, Andrew Francis; Wilhelm, Frederick Carl; Waller, Francis Joseph; Machado, Reinaldo Mario

    2003-08-26

    The present invention relates to an improved monolith catalytic reactor and a monolith support. The improvement in the support resides in a polymer network/carbon coating applied to the surface of a porous substrate and a catalytic metal, preferably a transition metal catalyst applied to the surface of the polymer network/carbon coating. The monolith support has from 100 to 800 cells per square inch and a polymer network/carbon coating with surface area of from 0.1 to 15 m.sup.2 /gram as measured by adsorption of N.sub.2 or Kr using the BET method.

  6. Monolithic mm-wave ICs for smart weapons

    NASA Astrophysics Data System (ADS)

    Duffield, T. L.

    1988-04-01

    An approach to developing a low-cost mm-wave transceiver with application to a broad range of smart weapons systems is described. The proposed transceiver technology consists of monolithic mm-wave integrated circuits on GaAs substrates. The relevant transceiver configurations, FET material, and electron beam lithography are discussed. The types of devices to which the approach is applicable are addressed, emphasizing the use of three-terminal devices for all active elements.

  7. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy

    NASA Astrophysics Data System (ADS)

    Pristovsek, Markus; Poser, Florian; Richter, Wolfgang

    2016-07-01

    We studied diffusion by measuring step-bunching, island spacing, and the transition from step-flow growth to two-dimensional island growth of (001) GaAs in metal-organic vapour phase epitaxy and correlated them with the surface reconstruction measured by reflectance anisotropy spectroscopy. The V/III ratio had a small effect, while the square root of the growth rate was anti-proportional to the diffusion length. The thermal activation energy was about 2.3 eV on {{c}}(4× 4) terraces and 1.6 eV on (2× 4) domains at higher temperatures. Pronounced step-bunching coincided with large (4× 2) domains at the step-edges, causing smoother steps for the [11̅0] misorientation. This Ga-rich reconstruction at the step-edges is needed for the Schwoebel barrier to induce step-bunching. At higher temperatures of (2× 4) domains grow in size, the Schwoebel barrier reduces and nucleation becomes easier on this surface which reduces diffusion length and thus step-bunching.

  8. Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma source

    NASA Astrophysics Data System (ADS)

    Monier, G.; Bideux, L.; Robert-Goumet, C.; Gruzza, B.; Petit, M.; Lábár, J. L.; Menyhárd, M.

    2012-07-01

    The benefits of using a low power glow discharge nitrogen plasma source to create high quality GaN layers on GaAs(001) surface are first highlighted. This uncommon type of plasma source has the particularity of working at a low power (3-10 W) and a low pressure (10- 1 Pa) which induce creation of a small quantity of active nitrogen species. We put in evidence that this distinctiveness allows the growth of a stoichiometric and As-free GaN ultra-thin film on a GaAs(001) substrate by the mean of the inter-diffusion of As and N atoms. XPS, EELS, AFM are used to monitor surface composition and structure changes and to estimate the GaN thickness. A near saturation of the nitride layer thickness versus plasma exposure time is found. Furthermore, the possibility to crystallize the amorphous GaN layer by an annealing at 620 °C in a cubic structure with a lattice parameter close to that of c-GaN is put in evidence by means of TEM and LEED measurements. These measurements also show the homogeneity of the GaN thickness. In addition, the passivating effect of the GaN ultra-thin film to protect the GaAs surface is proved with the monitoring by XPS of the surface oxidation during several days of air exposure.

  9. Material and processing issues for the monolithic integration of microelectronics with surface-micromachined polysilicon sensors and actuators

    SciTech Connect

    Smith, J.H.; Montague, S.; Sniegowski, J.J.

    1995-08-01

    The monolithic integration of micromechanical devices with their controlling electronics offers potential increases in performance as well as decreases in cost for these devices. Analog Devices has demonstrated the commercial viability of this integration by interleaving the micromechanical fabrication steps of an accelerometer with the microelectronic fabrication steps of its controlling electronics. Sandia`s Microelectronics Development Laboratory has integrated the micromechanical and microelectronic processing sequences in a segregated fashion. In this CMOS-first, micromechanics-last approach, conventional aluminum metallization is replaced by tungsten metallization to allow CMOS to withstand subsequent high-temperature processing during the micromechanical fabrication. This approach is a further development of an approach originally developed at UC Berkeley. Specifically, the issues of yield, repeatability, and uniformity of the tungsten/CMOS approach are addressed. Also, material issues related to the development of high-temperature diffusion barriers, adhesion layers, and low-stress films are discussed. Processing and material issues associated with alternative approaches to this integration such as micromechanics- first, CMOS-last or the interleaved process are also discussed.

  10. Neutral, Charged and Stratified Polar Monoliths for Hydrophilic Interaction Capillary Electrochromatography

    PubMed Central

    Gunasena, Dilani N.; El Rassi, Ziad

    2013-01-01

    Novel polar monoliths were introduced for hydrophilic interaction capillary electrochromatography (HI-CEC). In one case, a neutral polar monolith resulted from the in situ polymerization of glyceryl methacrylate (GMM) and pentaerythritol triacrylate (PETA) in a ternary porogenic solvent. GMM and PETA possess hydroxyl functional groups, which impart the monolith with hydrophilic interaction sites. This monolith is designated as hydroxy monolith. Although the hydroxy monolith is neutral and void of fixed charges on the surface, a relatively strong cathodal EOF was observed due to the electric double layer formed by the adsorption of ions from the mobile phase, producing a bulk mobile phase flow. The second monolith is charged and referred to as AP-monolith that possesses amine/amide functionalities on its surface, and was prepared by the in situ polymerization of N-(3-aminopropyl) methacrylamide hydrochloride (NAPM) and ethylene dimethacrylate (EDMA) in the presence of cyclohexanol, dodecanol and methanol as porogens. Over the pH range studied a strong anodal EOF was observed. The AP-monolith was further exploited in HI-CEC by modifying its surface with neutral mono- and oligosaccharides to produce a series of the so called sugar modified AP-monoliths (SMAP-monolith), which are considered as stratified hydrophilic monoliths possessing a sub-layer of polar amine/amide groups and a top layer of sugar (a polyhydroxy top layer).The SMAP-monoliths can be viewed as a blend of both the hydroxy monolith and the AP-monolith. The polarity of the various monoliths seems to follow the order: hydroxy monolith < AP-monolith < SMAP-monolith. The novel monoliths were characterized over a wide range of elution conditions with a variety of polar solutes including phenols, substituted phenols, nucleic acid bases, nucleosides and nucleotides PMID:23972465

  11. Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs

    NASA Astrophysics Data System (ADS)

    Cheng, Cheng-Wei; Hennessy, John; Antoniadis, Dimitri; Fitzgerald, Eugene A.

    2009-08-01

    Annealing native oxide covered GaAs samples in Arsine(AsH3) prior to atomic-layer-deposition of Al2O3 with trimethyaluminum (TMA) and isopropanol (IPA) results in capacitance-voltage (C-V) characteristics of the treated samples that resemble the superior C-V characteristics of p-type GaAs grown by an in situ metal-organic chemical vapor deposition process. Both TMA and IPA show self-cleaning effect on removing the native oxide in ex situ process, little evidence of a native oxide was observed with high resolution transmission electron microscopy at the Al2O3/GaAs interface. The discrepancy in the C-V characteristics was observed in in situ p- and n-type GaAs samples.

  12. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems

    NASA Technical Reports Server (NTRS)

    Bhasin, K. B.; Connolly, D. J.

    1986-01-01

    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  13. Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates

    NASA Astrophysics Data System (ADS)

    Kaneko, Yasuhisa; Nakagawa, Shigeru; Ichimura, Yoshikatsu; Yamada, Norihide; Mars, Dan E.; Takeuchi, Tetsuya

    2000-02-01

    We have studied blue vertical-cavity surface-emitting lasers (VCSELs) based on second-harmonic generation (SHG) grown on (411)A and (311)B GaAs substrates in order to investigate suitable substrate orientations for SHG-VCSELs. The comparison among substrate orientations has been made on three parameters, SHG conversion efficiency, transparency current density and gain coefficient. The transparency current density and the gain coefficient are characterized by edge emitting lasers grown on the above substrates. We also discuss the transparency current density and the gain coefficient for (311)A reported previously by Takahashi et al. [M. Takahashi, M. Hirai, K. Fujita, N. Egami, and K. Iga, J. Appl. Phys. 82, 4551 (1997)]. SHG conversion efficiency is 38 and 30% W for SHG-VCSELs grown on (311)B and (411)A substrates, respectively, which is consistent with theory, assuming identical nonlinear coefficients for the A face and B face. Transparency current density for (311)A, (311)B and (411)A is 80, 105 and 60 A/cm2, and gain coefficients for (311)A, (311)B and (411)A are 20, 13 and 18 cm-1, respectively. There are no significant differences between (311)A and (411)A, while those for (311)B are less than those for (311)A. In conclusion, SHG efficiency is dependent on crystal orientation consistent with theory and thus the (311) orientation is preferable. Optical gain is independent of substrate orientation, while it is dependent on substrate face and A face is preferable.

  14. Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2016-05-01

    There exist discrepancies between reports on cross-hatch (CH) behaviour and its interaction with interfacial misfit dislocations in the literature. In this work, a thorough CH analysis has been presented by use of conventional and statistical analysis of AFM data. It has been shown that correlation between cross-hatch and misfit dislocation depends on the growth conditions and residual strain. Anisotropic relaxation and dislocations, composition and epitaxial tilt have been studied by HRXRD analysis. To illustrate these findings, molecular beam epitaxy (MBE) grown metamorphic InGaAs on GaAs (001) samples have been used. Reciprocal space mapping has been used to characterize the composition and relaxation while epilayer tilt and dislocation have been investigated by HRXRD rocking curve. A better understanding of CH pattern can enable us to minimize the surface roughness for metamorphic electronic devices and to fully utilize the quasi-periodic undulation in cross-hatch in applications, like ordered quantum dot growth. [Figure not available: see fulltext.

  15. Monolithically integrated microfluidic nanoporous gold disk (NPGD) surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection

    NASA Astrophysics Data System (ADS)

    Li, Ming; Zhao, Fusheng; Zeng, Jianbo; Santos, Greggy M.; Shih, Wei-Chuan

    2015-03-01

    We present a novel microfluidic surface-enhanced Raman scattering (SERS) sensor for rapid and label-free biomolecular detection. Our sensor design mitigates a common limiting factor in microfluidic SERS sensors that utilize integrated nanostructures: low-efficiency transport of biomolecules to nanostructured surface which adversely impacts sensitivity. Our strategy is to increase the total usable nanostructured surface area, which provides more adsorption sites for biomolecules. Specifically, nanoporous gold disk (NPGD) array, a highly effective SERS substrate, has been monolithically integrated inside a microfluidic chip. Individual NPGD is known to feature an order of magnitude larger surface area than its projected disk area. The increased surface area arises from nanoscale pores and ligaments 3- dimensionally distributed in the NPGD, which manifest themselves as high-density SERS hot-spots. High-density NPGD arrays further guarantee large coverage of these hot-spots on the microchannel floor. The SERS-active NPGD arrays enable highly-reproducible SERS measurements with relative intensity variations from 8% to -8%. R6G solutions in the concentrations ranging from 1 μM to 1 mM have been detected and quantitatively evaluated, and the performance of the sensor in continuous-flow condition has been assessed. Moreover, the sensor's capabilities have been studied by detecting and identifying a physiological metabolite (urea), and the results show lower detection limit compared to best results from most recent work using integrated nanostructured surface inside microchannels. We expect that the sensor would be applicable for detecting, identifying and quantifying molecules for some point-of-care applications, i.e. urine screening.

  16. Protective Skins for Aerogel Monoliths

    NASA Technical Reports Server (NTRS)

    Leventis, Nicholas; Johnston, James C.; Kuczmarski, Maria A.; Meador, Ann B.

    2007-01-01

    A method of imparting relatively hard protective outer skins to aerogel monoliths has been developed. Even more than aerogel beads, aerogel monoliths are attractive as thermal-insulation materials, but the commercial utilization of aerogel monoliths in thermal-insulation panels has been inhibited by their fragility and the consequent difficulty of handling them. Therefore, there is a need to afford sufficient protection to aerogel monoliths to facilitate handling, without compromising the attractive bulk properties (low density, high porosity, low thermal conductivity, high surface area, and low permittivity) of aerogel materials. The present method was devised to satisfy this need. The essence of the present method is to coat an aerogel monolith with an outer polymeric skin, by painting or spraying. Apparently, the reason spraying and painting were not attempted until now is that it is well known in the aerogel industry that aerogels collapse in contact with liquids. In the present method, one prevents such collapse through the proper choice of coating liquid and process conditions: In particular, one uses a viscous polymer precursor liquid and (a) carefully controls the amount of liquid applied and/or (b) causes the liquid to become cured to the desired hard polymeric layer rapidly enough that there is not sufficient time for the liquid to percolate into the aerogel bulk. The method has been demonstrated by use of isocyanates, which, upon exposure to atmospheric moisture, become cured to polyurethane/polyurea-type coats. The method has also been demonstrated by use of commercial epoxy resins. The method could also be implemented by use of a variety of other resins, including polyimide precursors (for forming high-temperature-resistant protective skins) or perfluorinated monomers (for forming coats that impart hydrophobicity and some increase in strength).

  17. Monolithic exploding foil initiator

    DOEpatents

    Welle, Eric J; Vianco, Paul T; Headley, Paul S; Jarrell, Jason A; Garrity, J. Emmett; Shelton, Keegan P; Marley, Stephen K

    2012-10-23

    A monolithic exploding foil initiator (EFI) or slapper detonator and the method for making the monolithic EFI wherein the exploding bridge and the dielectric from which the flyer will be generated are integrated directly onto the header. In some embodiments, the barrel is directly integrated directly onto the header.

  18. Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

    NASA Astrophysics Data System (ADS)

    Hollinger, G.; Skheyta-Kabbani, R.; Gendry, M.

    1994-04-01

    The chemical composition of thin native oxide layers grown on GaAs and InAs by ultraviolet (UV)/ozone and thermal oxidation is investigated using x-ray-photoelectron spectroscopy. Core-level binding energies, core-level intensities, and valence-band spectra are compared with data for bulk crystalline binary or ternary As, In, and Ga oxides. The chemical compositions, which vary strongly from GaAs to InAs and from thermal to UV oxidation, appear to be controlled by both thermodynamic and kinetic factors. Only for GaAs thermal oxidation are the products predicted at thermodynamic equilibrium obtained. In all cases the native oxides can be described as single phase nonstoichiometric compounds and not as a macroscopic mixture of stoichiometric binary oxides.

  19. Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

    SciTech Connect

    Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

    2012-06-01

    State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect

    Ledentsov, N. N. Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2014-11-03

    We report on green (550–560 nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (∼500 A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  1. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Ledentsov, N. N.; Shchukin, V. A.; Lyytikäinen, J.; Okhotnikov, O.; Cherkashin, N. A.; Shernyakov, Yu M.; Payusov, A. S.; Gordeev, N. Y.; Maximov, M. V.; Schlichting, S.; Nippert, F.; Hoffmann, A.

    2015-03-01

    We report on green (550-560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale tensile strained GaP insertions in the cladding layers and light-emitting diodes (LEDs) based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. Cross-sectional transmission electron microscopy studies indicate that GaP insertions are flat, thus the GaP-barrier substrate orientation-dependent heights should match the predictions of the flat model. At moderate current densities (~500 A/cm2) the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (~550 nm at room temperature). At high current densities (>1 kA/cm2) a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p- doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

  2. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  3. GaAs photoconductive semiconductor switch

    DOEpatents

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  4. Monolithic NPG nanoparticles with large surface area, tunable plasmonics, and high-density internal hot-spots.

    PubMed

    Zhao, Fusheng; Zeng, Jianbo; Parvez Arnob, Md Masud; Sun, Po; Qi, Ji; Motwani, Pratik; Gheewala, Mufaddal; Li, Chien-Hung; Paterson, Andrew; Strych, Uli; Raja, Balakrishnan; Willson, Richard C; Wolfe, John C; Lee, T Randall; Shih, Wei-Chuan

    2014-07-21

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks not only possess large specific surface area but also high-density, internal plasmonic "hot-spots" with impressive electric field enhancement, which greatly promotes plasmon-matter interactions as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of nanoporous gold disks can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. Furthermore, nanoporous gold disks can be fabricated as either bound on a surface or as non-aggregating colloidal suspension with high stability. PMID:24926835

  5. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    PubMed

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection. PMID:26375576

  6. Monolithic NPG nanoparticles with large surface area, tunable plasmonics, and high-density internal hot-spots

    NASA Astrophysics Data System (ADS)

    Zhao, Fusheng; Zeng, Jianbo; Parvez Arnob, Md Masud; Sun, Po; Qi, Ji; Motwani, Pratik; Gheewala, Mufaddal; Li, Chien-Hung; Paterson, Andrew; Strych, Uli; Raja, Balakrishnan; Willson, Richard C.; Wolfe, John C.; Lee, T. Randall; Shih, Wei-Chuan

    2014-06-01

    Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the wavelength of light. Here we show that by making nanoporous gold in the form of disks of sub-wavelength diameter and sub-100 nm thickness, these limitations can be overcome. Nanoporous gold disks not only possess large specific surface area but also high-density, internal plasmonic ``hot-spots'' with impressive electric field enhancement, which greatly promotes plasmon-matter interactions as evidenced by spectral shifts in the surface plasmon resonance. In addition, the plasmonic resonance of nanoporous gold disks can be easily tuned from 900 to 1850 nm by changing the disk diameter from 300 to 700 nm. Furthermore, nanoporous gold disks can be fabricated as either bound on a surface or as non-aggregating colloidal suspension with high stability.Plasmonic metal nanostructures have shown great potential in sensing, photovoltaics, imaging and biomedicine, principally due to the enhancement of local electric field by light-excited surface plasmons, i.e., collective oscillation of conduction band electrons. Thin films of nanoporous gold have received a great deal of interest due to the unique 3-dimensional bicontinuous nanostructures with high specific surface area. However, in the form of semi-infinite thin films, nanoporous gold exhibits weak plasmonic extinction and little tunability in the plasmon resonance, because the pore size is much smaller than the

  7. Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Takehara, Yuji; Yoshimoto, Masahiro; Huang, Wei; Saraie, Junji; Oe, Kunishige; Chayahara, Akiyoshi; Horino, Yuji

    2006-01-01

    GaAs1-xBix alloys were grown on GaAs by molecular beam epitaxy (MBE). The lattice constants perpendicular and parallel to the surface of epilayers were estimated by high-resolution X-ray diffraction (XRD) analysis. The GaBi molar fraction was estimated by the Rutherford backscattering spectroscopy (RBS). GaAs1-xBix epilayers with GaBi molar fractions less than 5% were almost coherently grown on GaAs substrate with compressive strain. The lattice mismatch between GaAs1-xBix (x=5%) and GaAs was estimated to be approximately 0.5%.

  8. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  9. An AFM-based surface oxidation process for heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3

    NASA Astrophysics Data System (ADS)

    Shirakashi, J.-I.; Matsumoto, K.; Konagai, M.

    Under appropriate bias conditions in ambient humidity, AFM can be used to selectively oxidize the surface of electronic materials such as metals and semiconductors. Therefore, an AFM-based surface modification technique would be a powerful tool for fabricating nanometer-sized metal (M)/insulator (I) or semiconductor (S)/insulator (I) junction structures. Heavily carbon-doped p-type GaAs with a hole concentration of 1.5×1021 cm-3 is also of great interest for application to novel device structures, because the carrier concentration is comparable to that of normal metals. Selective surface oxidation of carbon-doped p-type GaAs was achieved using a negatively biased conductive tip. The oxidation shown here was carried out under 20-25% ambient humidity. By changing the applied bias voltage and the scanning speed of the cantilever, the size of the modified structure wires was precisely controlled, with a feature size of 10 nm. These results suggest that GaAs-based devices with ultra-small SIS junction systems could be realized using the AFM-based surface oxidation process.

  10. Improved monolithic tandem solar cell

    SciTech Connect

    Wanlass, M.W.

    1991-04-23

    A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surf ace of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

  11. Micromechanical Switches on GaAs for Microwave Applications

    NASA Technical Reports Server (NTRS)

    Randall, John N.; Goldsmith, Chuck; Denniston, David; Lin, Tsen-Hwang

    1995-01-01

    In this presentation, we describe the fabrication of micro-electro-mechanical system (MEMS) devices, in particular, of low-frequency multi-element electrical switches using SiO2 cantilevers. The switches discussed are related to micromechanical membrane structures used to perform switching of optical signals on silicon substrates. These switches use a thin metal membrane which is actuated by an electrostatic potential, causing the switch to make or break contact. The advantages include: superior isolation, high power handling capabilities, high radiation hardening, very low power operations, and the ability to integrate onto GaAs monolithic microwave integrated circuit (MMIC) chips.

  12. Advanced materials development for multi-junction monolithic photovoltaic devices

    SciTech Connect

    Dawson, L.R.; Reno, J.L.

    1996-07-01

    We report results in three areas of research relevant to the fabrication of monolithic multi-junction photovoltaic devices. (1) The use of compliant intervening layers grown between highly mismatched materials, GaAs and GaP (same lattice constant as Si), is shown to increase the structural quality of the GaAs overgrowth. (2) The use of digital alloys applied to the MBE growth of GaAs{sub x}Sb{sub l-x} (a candidate material for a two junction solar cell) provides increased control of the alloy composition without degrading the optical properties. (3) A nitrogen plasma discharge is shown to be an excellent p-type doping source for CdTe and ZnTe, both of which are candidate materials for a two junction solar cell.

  13. A 30 GHz monolithic receive module technology assessment

    NASA Technical Reports Server (NTRS)

    Geddes, J.; Sokolov, V.; Bauhahn, P.; Contolatis, T.

    1988-01-01

    This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources. To date the on-going Honeywell program has concentrated on demonstrating the so-called interconnected receive module which consists of four monolithic chips - the low noise front-end amplifier (LNA), the five bit phase shifter (PS), the gain control amplifier (GC), and the RF to IF downconverter (RF/IF). Results on all four individual chips have been obtained and interconnection of the first three functions has been accomplished. Future work on this contract is aimed at a higher level of integration, i.e., integration of the first three functions (LNA + PS + GC) on a single GaAs chip. The report presents the status of this technology and projections of its future directions.

  14. Selective oxidation of cyclohexene through gold functionalized silica monolith microreactors

    NASA Astrophysics Data System (ADS)

    Alotaibi, Mohammed T.; Taylor, Martin J.; Liu, Dan; Beaumont, Simon K.; Kyriakou, Georgios

    2016-04-01

    Two simple, reproducible methods of preparing evenly distributed Au nanoparticle containing mesoporous silica monoliths are investigated. These Au nanoparticle containing monoliths are subsequently investigated as flow reactors for the selective oxidation of cyclohexene. In the first strategy, the silica monolith was directly impregnated with Au nanoparticles during the formation of the monolith. The second approach was to pre-functionalize the monolith with thiol groups tethered within the silica mesostructure. These can act as evenly distributed anchors for the Au nanoparticles to be incorporated by flowing a Au nanoparticle solution through the thiol functionalized monolith. Both methods led to successfully achieving even distribution of Au nanoparticles along the length of the monolith as demonstrated by ICP-OES. However, the impregnation method led to strong agglomeration of the Au nanoparticles during subsequent heating steps while the thiol anchoring procedure maintained the nanoparticles in the range of 6.8 ± 1.4 nm. Both Au nanoparticle containing monoliths as well as samples with no Au incorporated were tested for the selective oxidation of cyclohexene under constant flow at 30 °C. The Au free materials were found to be catalytically inactive with Au being the minimum necessary requirement for the reaction to proceed. The impregnated Au-containing monolith was found to be less active than the thiol functionalized Au-containing material, attributable to the low metal surface area of the Au nanoparticles. The reaction on the thiol functionalized Au-containing monolith was found to depend strongly on the type of oxidant used: tert-butyl hydroperoxide (TBHP) was more active than H2O2, likely due to the thiol induced hydrophobicity in the monolith.

  15. Preparation of polyhedral oligomeric silsesquioxane based imprinted monolith.

    PubMed

    Li, Fang; Chen, Xiu-Xiu; Huang, Yan-Ping; Liu, Zhao-Sheng

    2015-12-18

    Polyhedral oligomeric silsesquioxane (POSS) was successfully applied, for the first time, to prepare imprinted monolithic column with high porosity and good permeability. The imprinted monolithic column was synthesized with a mixture of PSS-(1-Propylmethacrylate)-heptaisobutyl substituted (MA 0702), naproxon (template), 4-vinylpyridine, and ethylene glycol dimethacrylate, in ionic liquid 1-butyl-3-methylimidazolium tetrafluoroborate ([BMIM]BF4). The influence of synthesis parameters on the retention factor and imprinting effect, including the amount of MA 0702, the ratio of template to monomer, and the ratio of monomer to crosslinker, was investigated. The greatest imprinting factor on the imprinted monolithic column prepared with MA 0702 was 22, about 10 times higher than that prepared in absence of POSS. The comparisons between MIP monoliths synthesized with POSS and without POSS were made in terms of permeability, column efficiency, surface morphology and pore size distribution. In addition, thermodynamic and Van Deemter analysis were used to evaluate the POSS-based MIP monolith. PMID:26627587

  16. Advanced on-chip divider for monolithic microwave VCO's

    NASA Technical Reports Server (NTRS)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  17. Catalytic Ignition and Upstream Reaction Propagation in Monolith Reactors

    NASA Technical Reports Server (NTRS)

    Struk, Peter M.; Dietrich, Daniel L.; Miller, Fletcher J.; T'ien, James S.

    2007-01-01

    Using numerical simulations, this work demonstrates a concept called back-end ignition for lighting-off and pre-heating a catalytic monolith in a power generation system. In this concept, a downstream heat source (e.g. a flame) or resistive heating in the downstream portion of the monolith initiates a localized catalytic reaction which subsequently propagates upstream and heats the entire monolith. The simulations used a transient numerical model of a single catalytic channel which characterizes the behavior of the entire monolith. The model treats both the gas and solid phases and includes detailed homogeneous and heterogeneous reactions. An important parameter in the model for back-end ignition is upstream heat conduction along the solid. The simulations used both dry and wet CO chemistry as a model fuel for the proof-of-concept calculations; the presence of water vapor can trigger homogenous reactions, provided that gas-phase temperatures are adequately high and there is sufficient fuel remaining after surface reactions. With sufficiently high inlet equivalence ratio, back-end ignition occurs using the thermophysical properties of both a ceramic and metal monolith (coated with platinum in both cases), with the heat-up times significantly faster for the metal monolith. For lower equivalence ratios, back-end ignition occurs without upstream propagation. Once light-off and propagation occur, the inlet equivalence ratio could be reduced significantly while still maintaining an ignited monolith as demonstrated by calculations using complete monolith heating.

  18. Photoinitiated grafting of porous polymer monoliths and thermoplastic polymers for microfluidic devices

    DOEpatents

    Frechet, Jean M. J.; Svec, Frantisek; Rohr, Thomas

    2008-10-07

    A microfluidic device preferably made of a thermoplastic polymer that includes a channel or a multiplicity of channels whose surfaces are modified by photografting. The device further includes a porous polymer monolith prepared via UV initiated polymerization within the channel, and functionalization of the pore surface of the monolith using photografting. Processes for making such surface modifications of thermoplastic polymers and porous polymer monoliths are set forth.

  19. Flow-through immunosensors using antibody-immobilized polymer monoliths

    PubMed Central

    Liu, Jikun; Chen, Chien-Fu; Chang, Chih-Wei; DeVoe, Don L.

    2010-01-01

    High-sensitivity and rapid flow-through immunosensors based on photopolymerized surface-reactive polymer monoliths are investigated. The porous monoliths were synthesized within silica capillaries from glycidyl methacrylate and ethoxylated trimethylolpropane triacrylate precursors, providing a tortuous pore structure with high surface area for the immobilization of antibodies or other biosensing ligands. The unique morphology of the monolith ensures efficient mass transport and interactions between solvated analyte molecules and covalently immobilize antibodies anchored to the monolith surface, resulting in rapid immunorecognition. The efficacy of this approach is demonstrated through a direct immunoassay model using anti-IgG as a monolith-bound capture antibody and fluorescein-labeled IgG as an antigen. In situ antigen measurements exhibited a linear response over a concentration range between 0.1 - 50 ng/mL with 5 min assay times, while controllable injection of 1 μL volumes of antigen through the monolith elements yielded a mass detection limit of 100 pg (~700 amol). These results suggest that porous monolith supports represent a flexible and promising material for the fabrication of rapid and sensitive immunosensors suitable for integration into capillary or microfluidic devices. PMID:20598520

  20. Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

    1982-01-01

    Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

  1. Facile fabrication of mesoporous poly(ethylene-co-vinyl alcohol)/chitosan blend monoliths.

    PubMed

    Wang, Guowei; Xin, Yuanrong; Uyama, Hiroshi

    2015-11-01

    Poly(ethylene-co-vinyl alcohol) (EVOH)/chitosan blend monoliths were fabricated by thermally-induced phase separation method. Chitosan was successfully incorporated into the polymeric monolith by selecting EVOH as the main component of the monolith. SEM images exhibit that the chitosan was located on the inner surface of the monolith. Fourier-transform infrared analysis and elemental analysis indicate the successful blend of EVOH and chitosan. BET results show that the blend monoliths had high specific surface area and uniform mesopore structure. Good adsorption ability toward various heavy metal ions was found in the blend monoliths due to the large chelation capacity of chitosan. The blend monoliths have potential application for waste water purification or bio-related applications. PMID:26256358

  2. Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

    NASA Technical Reports Server (NTRS)

    Oh, J. E.; Chen, Y. C.; Bhattacharya, P. K.; Tsukamoto, S.

    1989-01-01

    Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

  3. Development and characterization of methacrylate-based hydrazide monoliths for oriented immobilization of antibodies.

    PubMed

    Brne, P; Lim, Y-P; Podgornik, A; Barut, M; Pihlar, B; Strancar, A

    2009-03-27

    Convective interaction media (CIM; BIA Separations) monoliths are attractive stationary phases for use in affinity chromatography because they enable fast affinity binding, which is a consequence of convectively enhanced mass transport. This work focuses on the development of novel CIM hydrazide (HZ) monoliths for the oriented immobilization of antibodies. Adipic acid dihydrazide (AADH) was covalently bound to CIM epoxy monoliths to gain hydrazide groups on the monolith surface. Two different antibodies were afterwards immobilized to hydrazide functionalized monolithic columns and prepared columns were tested for their selectivity. One column was further tested for the dynamic binding capacity. PMID:19203754

  4. Embedded-monolith armor

    DOEpatents

    McElfresh, Michael W.; Groves, Scott E; Moffet, Mitchell L.; Martin, Louis P.

    2016-07-19

    A lightweight armor system utilizing a face section having a multiplicity of monoliths embedded in a matrix supported on low density foam. The face section is supported with a strong stiff backing plate. The backing plate is mounted on a spall plate.

  5. High-contrast grating reflectors for 980 nm vertical-cavity surface-emitting lasers

    NASA Astrophysics Data System (ADS)

    Gebski, M.; Kuzior, O.; Wasiak, M.; Szerling, A.; Wójcik-Jedlińska, A.; Pałka, N.; Dems, M.; Xie, Y. Y.; Xu, Z. J.; Wang, Q. J.; Zhang, D. H.; Czyszanowski, T.

    2015-02-01

    This paper presents results of computer simulation of 1D monolithic high refractive index contrast grating (MHCG) reflector also called surface grating reflector (SGR). We analyzed optical properties of the GaAs reflector designed for 980 nm wavelength with respect to the grating parameters variation. We also determined the electric field patterns after reflection from the structure in several cases of parameters variation. We show that thanks to the scalability and design simplicity, proposed design is a promising candidate for simple, next generation vertical cavity surface emitting lasers emitting from ultra-violet to infrared.

  6. A two-stage monolithic buffer amplifier for 20 GHz satellite communication

    NASA Technical Reports Server (NTRS)

    Petersen, W. C.; Gupta, A. K.

    1983-01-01

    Design, fabrication, and test results of a two-stage GaAs monolithic buffer amplifier for 20 GHz satellite communication are described in this paper. A gain of 13 + or - 0.75 dB from 17.7 to 20.2 GHz was obtained from the 1.5 x 1.5 millimeter chip, which includes all necessary bias and dc blocking circuitry.

  7. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    NASA Technical Reports Server (NTRS)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1983-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented highlighting the advantages of distributed amplifier approach compared to the conventional single power source designs.

  8. Ex Situ Integration of Multifunctional Porous Polymer Monoliths into Thermoplastic Microfluidic Chips

    PubMed Central

    Kendall, Eric L.; Wienhold, Erik; Rahmanian, Omid D.; DeVoe, Don L.

    2014-01-01

    A unique method for incorporating functional porous polymer monolith elements into thermoplastic microfluidic chips is described. Monolith elements are formed in a microfabricated mold, rather than within the microchannels, and chemically functionalized off chip before insertion into solvent-softened thermoplastic microchannels during chip assembly. Because monoliths may be trimmed prior to final placement, control of their size, shape, and uniformity is greatly improved over in-situ photopolymerization methods. A characteristic trapezoidal profile facilitates rapid insertion and enables complete mechanical anchoring of the monolith periphery, eliminating the need for chemical attachment to the microchannel walls. Off-chip processing allows the parallel preparation of monoliths of differing compositions and surface chemistries in large batches. Multifunctional flow-through arrays of multiple monolith elements are demonstrated using this approach through the creation of a fluorescent immunosensor with integrated controls, and a microfluidic bubble separator comprising a combination of integrated hydrophobic and hydrophilic monolith elements. PMID:25018587

  9. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H.; Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V.; Katzenstein, A. L.; Sofferman, D. L.; Goldman, R. S.

    2013-09-02

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  10. Hierarchical Porous Polystyrene Monoliths from PolyHIPE.

    PubMed

    Yang, Xinjia; Tan, Liangxiao; Xia, Lingling; Wood, Colin D; Tan, Bien

    2015-09-01

    Hierarchical porous polystyrene monoliths (HCP-PolyHIPE) are obtained by hypercrosslinking poly(styrene-divinylbenzene) monoliths prepared by polymerization of high internal phase emulsions (PolyHIPEs). The hypercrosslinking is achieved using an approach known as knitting which employs formaldehyde dimethyl acetal (FDA) as an external crosslinker. Scanning electron microscopy (SEM) confirms that the macroporous structure in the original monolith is retained during the knitting process. By increasing the amount of divinylbenzene (DVB) in PolyHIPE, the BET surface area and pore volume of the HCP-PolyHIPE decrease, while the micropore size increases. BET surface areas of 196-595 m(2) g(-1) are obtained. The presence of micropores, mesopores, and macropores is confirmed from the pore size distribution. With a hierarchical porous structure, the monoliths reveal comparable gas sorption properties and potential applications in oil spill clean-up. PMID:26178423

  11. Fabrication of self-assembled Au droplets by the systematic variation of the deposition amount on various type-B GaAs surfaces

    PubMed Central

    2014-01-01

    The fabrication of self-assembled Au droplets is successfully demonstrated on various GaAs (n11)B, where n is 2, 4, 5, 7, 8, and 9, by the systematic variation of the Au deposition amount (DA) from 2 to 12 nm with subsequent annealing at 550°C. Under an identical growth condition, the self-assembled Au droplets of mini to supersizes are successfully synthesized via the Volmer-Weber growth mode. Depending on the DA, an apparent evolution is clearly observed in terms of the average height (AH), lateral diameter (LD), and average density (AD). For example, compared with the mini Au droplets with a DA of 2 nm, AH of 22.5 nm, and LD of 86.5 nm, the super Au droplets with 12-nm DA show significantly increased AH of 316% and LD of 320%, reaching an AH of 71.1 nm and LD of 276.8 nm on GaAs (211)B. In addition, accompanied with the dimensional expansion, the AD of Au droplets drastically swings on 2 orders of magnitudes from 3.2 × 1010 to 4.2 × 108 cm-2. The results are systematically analyzed with respect to the atomic force microscopy (AFM) and scanning electron microscopy (SEM) images, energy-dispersive X-ray spectrometry (EDS) spectra, cross-sectional line profiles, Fourier filter transform (FFT) power spectra, and root-mean-square (RMS) roughness as well as the droplet dimension and density summary, respectively. PMID:25221460

  12. Monolithic Optoelectronic Integrated Circuit

    NASA Technical Reports Server (NTRS)

    Bhasin, Kul B.; Walters, Wayne; Gustafsen, Jerry; Bendett, Mark

    1990-01-01

    Monolithic optoelectronic integrated circuit (OEIC) receives single digitally modulated input light signal via optical fiber and converts it into 16-channel electrical output signal. Potentially useful in any system in which digital data must be transmitted serially at high rates, then decoded into and used in parallel format at destination. Applications include transmission and decoding of control signals to phase shifters in phased-array antennas and also communication of data between computers and peripheral equipment in local-area networks.

  13. Monolithic Continuous-Flow Bioreactors

    NASA Technical Reports Server (NTRS)

    Stephanopoulos, Gregory; Kornfield, Julia A.; Voecks, Gerald A.

    1993-01-01

    Monolithic ceramic matrices containing many small flow passages useful as continuous-flow bioreactors. Ceramic matrix containing passages made by extruding and firing suitable ceramic. Pores in matrix provide attachment medium for film of cells and allow free movement of solution. Material one not toxic to micro-organisms grown in reactor. In reactor, liquid nutrients flow over, and liquid reaction products flow from, cell culture immobilized in one set of channels while oxygen flows to, and gaseous reaction products flow from, culture in adjacent set of passages. Cells live on inner surfaces containing flowing nutrient and in pores of walls of passages. Ready access to nutrients and oxygen in channels. They generate continuous high yield characteristic of immobilized cells, without large expenditure of energy otherwise incurred if necessary to pump nutrient solution through dense biomass as in bioreactors of other types.

  14. Finite element analysis of monolithic solid oxide fuel cells

    SciTech Connect

    Saigal, A. . Dept. of Mechanical Engineering); Majumdar, S. )

    1992-01-01

    This paper investigates the stress and fracture behavior of a monolithic solid oxide fuel cell (MSOFC) currently under joint development by Allied Signal Corporation and Argonne National Laboratory. The MSOFC is an all-ceramic fuel cell capable of high power density and tolerant of a variety of hydrocarbon fuels, making it potentially attractive for stationary utility and mobile transportation systems. The monolithic design eliminates inactive structural supports, increases active surface area, and lowers voltage losses caused by internal resistance.

  15. Finite element analysis of monolithic solid oxide fuel cells

    SciTech Connect

    Saigal, A.; Majumdar, S.

    1992-04-01

    This paper investigates the stress and fracture behavior of a monolithic solid oxide fuel cell (MSOFC) currently under joint development by Allied Signal Corporation and Argonne National Laboratory. The MSOFC is an all-ceramic fuel cell capable of high power density and tolerant of a variety of hydrocarbon fuels, making it potentially attractive for stationary utility and mobile transportation systems. The monolithic design eliminates inactive structural supports, increases active surface area, and lowers voltage losses caused by internal resistance.

  16. Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

    NASA Technical Reports Server (NTRS)

    Siegel, Peter; Schlecht, Erich; Mehdi, Imran; Gill, John; Velebir, James; Tsang, Raymond; Dengler, Robert; Lin, Robert

    2010-01-01

    This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows

  17. High efficiency GaAs/Ge monolithic tandem solar cells

    NASA Technical Reports Server (NTRS)

    Tobin, S. P.; Vernon, S. M.; Bajgar, C.; Haven, V. E.; Geoffroy, L. M.; Sanfacon, M. M.; Lillington, D. R.; Hart, R. E., Jr.

    1988-01-01

    Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

  18. Steam reforming of n-hexane on pellet and monolithic catalyst beds. A comparative study on improvements due to heat transfer

    NASA Technical Reports Server (NTRS)

    1981-01-01

    Monolithic catalysts with higher available active surface areas and better thermal conductivity than conventional pellets beds, making possible the steam reforming of fuels heavier than naphtha, were examined. Performance comparisons were made between conventional pellet beds and honeycomb monolith catalysts using n-hexane as the fuel. Metal-supported monoliths were examined. These offer higher structural stability and higher thermal conductivity than ceramic supports. Data from two metal monoliths of different nickel catalyst loadings were compared to pellets under the same operating conditions. Improved heat transfer and better conversion efficiencies were obtained with the monolith having higher catalyst loading. Surface-gas interaction was observed throughout the length of the monoliths.

  19. Magnetron Sputtered Gold Contacts on N-gaas

    NASA Technical Reports Server (NTRS)

    Buonaquisti, A. D.; Matson, R. J.; Russell, P. E.; Holloway, P. H.

    1984-01-01

    Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

  20. Electronic contribution to friction on GaAs

    SciTech Connect

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  1. Spatial and temporal distribution of the leaching of surface applied tracers from an irrigated monolith of a loamy vineyard soil.

    PubMed

    Bloem, E; Hermon, K M; de Rooij, G H; Stagnitti, F

    2014-01-01

    Fresh water scarcity is an increasing problem worldwide. Strategies to alleviate water scarcity include the use of low-quality water for irrigation. The risk of groundwater contamination by pollutants in this water is affected by soil heterogeneity and preferential flow. These risk factors can be assessed by measuring the spatio-temporal redistribution of uniformly applied water and solutes. We placed a soil monolith (height 29 cm) from an Australian vineyard on a 100-cell multi-compartment sampler (MCS). At this vineyard, treated wastewater is used in response to the severe shortage of water in the summer. We studied the leaching risk associated with heterogeneous or preferential flow by irrigating the soil column with 24 applications to simulate one year. We applied simulated rainfall as well as wastewater (which contained chloride) during summer while relying on rainfall only in winter. We compared the chloride leaching with the leaching of bromide, which was applied during one of the applications as a pulse. During the entire simulated year, leaching of solutes from the monolith was measured. The results indicate that the assumption of uniform flow would underestimate the risk for the fresh groundwater reserves: 25% of the solutes are transported though 6% of the soil's cross-section. The spatial distribution of drainage and solute leaching varied little during the experiment. Consequently, the mass flux density pattern of the bromide pulse was comparable to that of the repeatedly applied chloride. However, the MCS data suggested lateral 'escape' from chloride to non-mobile areas, which means in the long run, considerable quantities of these solutes can build up in areas that do not receive irrigation water. PMID:24638830

  2. Combining thermodynamic simulations, element and surface analytics to study U(VI) retention in corroded cement monoliths upon >20 years of leaching

    NASA Astrophysics Data System (ADS)

    Bube, C.; Metz, V.; Schild, D.; Rothe, J.; Dardenne, K.; Lagos, M.; Plaschke, M.; Kienzler, B.

    Retention or release of radionuclides in a deep geological repository for radioactive wastes strongly depends on the geochemical environment and on the interaction with near-field components, e.g. waste packages and backfill materials. Deep geological disposal in rock salt is one of the concepts considered for cemented low- and intermediate-level wastes. Long-term experiments were performed to observe the evolution of full-scale cemented waste simulates (doped with (NH4)2U2O7) upon reaction with relevant salt brines, e.g. MgCl2-rich and saturated NaCl solutions, and to examine the binding mechanisms of uranium. Throughout the experiments, concentrations of major solution components, uranium and pH values were monitored regularly and compared to thermodynamic equilibrium calculations, which indicate that close-to-equilibrium conditions have been achieved after 13-14 years duration of the leaching experiments. Two of the full-scale cemented waste simulates were recovered from the solutions after 17-18 years and studied by different analytical methods to characterize the solids, especially with respect to uranium incorporation. In drill core fragments of various lateral and horizontal positions of the corroded monoliths, U-rich aggregates were detected and analyzed by means of space-resolved techniques. Raman, μ-XANES and μ-XRD analyses of several aggregates demonstrate that they consist of an amorphous diuranate-type solid. Within error, calculated U solubilities controlled by Na-diuranate (Na2U2O7·H2O) are consistent with measured U concentrations in both, the NaCl and the MgCl2-system. Since uranophane occurs also in the corroded monoliths, it is proposed that a transition towards the thermodynamic equilibrium U(VI) phase is kinetically hindered.

  3. Atomic hydrogen cleaning of GaAS Photocathodes

    SciTech Connect

    M. Poelker; J. Price; C. Sinclair

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

  4. Monolithic microfluidic concentrators and mixers

    DOEpatents

    Frechet, Jean M.; Svec, Frantisek; Yu, Cong; Rohr, Thomas

    2005-05-03

    Microfluidic devices comprising porous monolithic polymer for concentration, extraction or mixing of fluids. A method for in situ preparation of monolithic polymers by in situ initiated polymerization of polymer precursors within microchannels of a microfluidic device and their use for solid phase extraction (SPE), preconcentration, concentration and mixing.

  5. The 30-GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Sokolov, V.; Geddes, J.; Bauhahn, P.

    1983-01-01

    Key requirements for a 30 GHz GaAs monolithic receive module for spaceborne communication antenna feed array applications include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five-bit phase shifter, and a maximum power consumption of 250 mW. The RF designs for each of the four submodules (low noise amplifier, some gain control, phase shifter, and RF to IF sub-module) are presented. Except for the phase shifter, high frequency, low noise FETs with sub-half micron gate lengths are employed in the submodules. For the gain control, a two stage dual gate FET amplifier is used. The phase shifter is of the passive switched line type and consists of 5-bits. It uses relatively large gate width FETs (with zero drain to source bias) as the switching elements. A 20 GHz local oscillator buffer amplifier, a FET compatible balanced mixer, and a 5-8 GHz IF amplifier constitute the RF/IF sub-module. Phase shifter fabrication using ion implantation and a self-aligned gate technique is described. Preliminary RF results obtained on such phase shifters are included.

  6. Structure for monolithic optical circuits

    NASA Technical Reports Server (NTRS)

    Evanchuk, Vincent L. (Inventor)

    1984-01-01

    A method for making monolithic optical circuits, with related optical devices as required or desired, on a supporting surface (10) consists of coating the supporting surface with reflecting metal or cladding resin, spreading a layer of liquid radiation sensitive plastic (12) on the surface, exposing the liquid plastic with a mask (14) to cure it in a desired pattern of light conductors (16, 18, 20), washing away the unexposed liquid plastic, and coating the conductors thus formed with reflective metal or cladding resin. The index of refraction for the cladding (22) is selected to be lower than for the conductors so that light in the conductors will be reflected by the interface with the cladding. For multiple level conductors, as where one conductor must cross over another, the process may be repeated to fabricate a bridge with columns (24, 26) of conductors to the next level, and conductor (28) between the columns. For more efficient transfer of energy over the bridge, faces at 45.degree. may be formed to reflect light up and across the bridge.

  7. Monolithic ballasted penetrator

    DOEpatents

    Hickerson, Jr., James P.; Zanner, Frank J.; Baldwin, Michael D.; Maguire, Michael C.

    2001-01-01

    The present invention is a monolithic ballasted penetrator capable of delivering a working payload to a hardened target, such as reinforced concrete. The invention includes a ballast made from a dense heavy material insert and a monolithic case extending along an axis and consisting of a high-strength steel alloy. The case includes a nose end containing a hollow portion in which the ballast is nearly completely surrounded so that no movement of the ballast relative to the case is possible during impact with a hard target. The case is cast around the ballast, joining the two parts together. The ballast may contain concentric grooves or protrusions that improve joint strength between the case and ballast. The case further includes a second hollow portion; between the ballast and base, which has a payload fastened within this portion. The penetrator can be used to carry instrumentation to measure the geologic character of the earth, or properties of arctic ice, as they pass through it.

  8. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2015-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  9. Monolithic Flexure Pre-Stressed Ultrasonic Horns

    NASA Technical Reports Server (NTRS)

    Sherrit, Stewart (Inventor); Bao, Xiaoqi (Inventor); Badescu, Mircea (Inventor); Bar-Cohen, Yoseph (Inventor); Allen, Phillip Grant (Inventor)

    2016-01-01

    A monolithic ultrasonic horn where the horn, backing, and pre-stress structures are combined in a single monolithic piece is disclosed. Pre-stress is applied by external flexure structures. The provision of the external flexures has numerous advantages including the elimination of the need for a pre-stress bolt. The removal of the pre-stress bolt eliminates potential internal electric discharge points in the actuator. In addition, it reduces the chances of mechanical failure in the actuator stacks that result from the free surface in the hole of conventional ring stacks. In addition, the removal of the stress bolt and the corresponding reduction in the overall number of parts reduces the overall complexity of the resulting ultrasonic horn actuator and simplifies the ease of the design, fabrication and integration of the actuator of the present invention into other structures.

  10. Preparation of sub-micron skeletal monoliths with high capacity for liquid chromatography.

    PubMed

    Yao, Chunhe; Qi, Li; Yang, Gengliang; Wang, Fuyi

    2010-03-01

    A novel kind of poly(glycidyl methacrylate-co-ethylene glycol dimethacrylate)-based monolithic column was developed for LC by directing supramolecular self-assembly of high internal phase emulsion. Mercury intrusion porosimetry characterization and scanning electron microscope pictures showed that these monoliths presented micrometer-sized throughpores, unique sub-micron skeletons and relatively large specific surface area. Additionally, porosity of monoliths could be adjusted while skeletons remained in the size range of 100.0-1000.0 nm. The new monoliths demonstrated not only better column efficiency, but also larger binding capacity. Dynamic binding capacity for protein (BSA) was evaluated to be 42.5 mg/mL, above two times higher than that of the general monoliths (19.1 mg/mL) and higher than that of commercial "Convective Interaction Media" monolithic columns (30.0 mg/mL). Moreover, their chromatographic behaviors were also evaluated in detail by chemical stability and swelling characterization of the monolithic column. Separation of proteins mixture (cytochrome c, myoglobin, ribonuclease A, lysozyme and BSA) on the monolith was achieved within 4 min at velocity of 1440.0 cm/h. Those unique properties made the novel monolithic column a promising alternative to commercially available monolithic supports in LC applications. PMID:20063358

  11. The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

    NASA Technical Reports Server (NTRS)

    Hansen, H. S.; Bensaoula, A.; Tougaard, S.; Zborowski, J.; Ignatiev, A.

    1992-01-01

    The paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.

  12. Preparing titania aerogel monolithic chromatography columns using supercritical carbon dioxide.

    PubMed

    Sui, Ruohong; Liu, Suya; Lajoie, Gilles A; Charpentier, Paul A

    2010-06-01

    The search for a method to fabricate monolithic inorganic columns has attracted significant recent attention due to their unique ability in separation applications of various biomolecules. Silica and polymer based monolithic columns have been prepared, but titania and other metal oxide monoliths have been elusive, primarily due to their fragility. This article describes a new approach for preparing nanostructured titania based columns, which offer better performance over conventional particle packed columns for separating a wide variety of biomolecules including phosphopeptides. TiO(2) monolithic aerogels were synthesized in separation columns using in situ sol-gel reactions in supercritical carbon dioxide (scCO(2)) followed by calcination, and compared to those prepared in heptanes. The characterization results show that scCO(2) is a better solvent for the sol-gel reactions, providing lower shrinkage with the anatase TiO(2) monolith composed of nanofibers with very high surface areas. The monolithic columns show the ability to isolate phosphopeptides with little flow resistance compared to conventional titania particle based microcolumns. PMID:20373296

  13. Characterization of methacrylate chromatographic monoliths bearing affinity ligands.

    PubMed

    Černigoj, Urh; Vidic, Urška; Nemec, Blaž; Gašperšič, Jernej; Vidič, Jana; Lendero Krajnc, Nika; Štrancar, Aleš; Podgornik, Aleš

    2016-09-16

    We investigated effect of immobilization procedure and monolith structure on chromatographic performance of methacrylate monoliths bearing affinity ligands. Monoliths of different pore size and various affinity ligands were prepared and characterized using physical and chromatographic methods. When testing protein A monoliths with different protein A ligand densities, a significant nonlinear effect of ligand density on dynamic binding capacity (DBC) for IgG was obtained and accurately described by Langmuir isotherm curve enabling estimation of protein A utilization as a function of ligand density. Maximal IgG binding capacity was found to be at least 12mg/mL exceeding theoretical monolayer adsorption value of 7.8mg/mL assuming hexagonal packing and IgG hydrodynamic diameter of 11nm. Observed discrepancy was explained by shrinkage of IgG during adsorption on protein A experimentally determined through calculated adsorbed IgG layer thickness of 5.4nm from pressure drop data. For monoliths with different pore size maximal immobilized densities of protein A as well as IgG dynamic capacity linearly correlates with monolith surface area indicating constant ligand utilization. Finally, IgGs toward different plasma proteins were immobilized via the hydrazide coupling chemistry to provide oriented immobilization. DBC was found to be flow independent and was increasing with the size of bound protein. Despite DBC was lower than IgG capacity to immobilized protein A, ligand utilization was higher. PMID:27554023

  14. [Preparation of a novel polymer monolith using atom transfer radical polymerization method for solid phase extraction].

    PubMed

    Shen, Ying; Qi, Li; Qiao, Juan; Mao, Lanqun; Chen, Yi

    2013-04-01

    In this study, a novel polymer monolith based solid phase extraction (SPE) material has been prepared by two-step atom transfer radical polymerization (ATRP) method. Firstly, employing ethylene glycol dimethacrylate (EDMA) as a cross-linker, a polymer monolith filled in a filter head has been in-situ prepared quickly under mild conditions. Then, the activators generated by electron transfer ATRP (ARGET ATRP) was used for the modification of poly(2-(dimethylamino)ethyl-methacrylate) (PDMAEMA) on the monolithic surface. Finally, this synthesized monolith for SPE was successfully applied in the extraction and enrichment of steroids. The results revealed that ATRP can be developed as a facile and effective method with mild reaction conditions for monolith construction and has the potential for preparing monolith in diverse devices. PMID:23898628

  15. GaAs solar cells with V-grooved emitters

    NASA Technical Reports Server (NTRS)

    Bailey, S. G.; Fatemi, N.; Wilt, D. M.; Landis, G. A.; Thomas, R. D.

    1989-01-01

    A GaAs solar cell with a V-grooved front surface is described. It shows improved optical coupling and higher short-circuit current compared to planar cells. The GaAs homojunction cells, manufactured by OrganoMetallic Chemical Vapor Deposition (OMCVD), are described. The V-grooves were formed by anisotropic etching. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

  16. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Stirn, R. J.

    1977-01-01

    Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.

  17. High efficiency thin-film GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Zwerdling, S.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

  18. Monolithic microchannel heatsink

    DOEpatents

    Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

    1996-08-20

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

  19. Monolithic microchannel heatsink

    DOEpatents

    Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

    1996-01-01

    A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

  20. Monolithically compatible impedance measurement

    DOEpatents

    Ericson, Milton Nance; Holcomb, David Eugene

    2002-01-01

    A monolithic sensor includes a reference channel and at least one sensing channel. Each sensing channel has an oscillator and a counter driven by the oscillator. The reference channel and the at least one sensing channel being formed integrally with a substrate and intimately nested with one another on the substrate. Thus, the oscillator and the counter have matched component values and temperature coefficients. A frequency determining component of the sensing oscillator is formed integrally with the substrate and has an impedance parameter which varies with an environmental parameter to be measured by the sensor. A gating control is responsive to an output signal generated by the reference channel, for terminating counting in the at least one sensing channel at an output count, whereby the output count is indicative of the environmental parameter, and successive ones of the output counts are indicative of changes in the environmental parameter.

  1. SOI monolithic pixel detector

    NASA Astrophysics Data System (ADS)

    Miyoshi, T.; Ahmed, M. I.; Arai, Y.; Fujita, Y.; Ikemoto, Y.; Takeda, A.; Tauchi, K.

    2014-05-01

    We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.

  2. Measuring Carrier Lifetime in GaAs by Luminescence

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1986-01-01

    Luminescence proposed as nondestructive technique for measuring Shockley-Read-Hall (SRH) recombination lifetime GaAs. Sample irradiated, and luminescence escapes through surface. Measurement requires no mechanical or electrical contact with sample. No ohmic contacts or p/n junctions needed. Sample not scrapped after tested.

  3. ZnSe Films in GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Kachare, Ram H.

    1987-01-01

    ZnSe increases efficiency and conserves material. Two proposed uses of zinc selenide films promise to boost performance and reduce cost of gallium arsenide solar cells. Accordingly ZnSe serves as surface-passivation layer and as sacrificial layer enabling repeated use of costly GaAs substrate in fabrication.

  4. Monolithic microextraction tips by emulsion photopolymerization.

    PubMed

    Liang, Shih-Shin; Chen, Shu-Hui

    2009-03-20

    Monoliths formed by photopolymerization are excellent means for fabricating functional elements in miniaturized microdevices such as microextraction tips which are becoming important for sample preparation. Various silica-based and polymer-based materials have been used to fabricate monoliths with through pores of several nm to 4 microm. However, the back pressure created by such methods is still considered to be high for microtips that use suction forces to deliver the liquid. In this study, we demonstrated that emulsion techniques such as oil-in-water can be used to form monoliths with large through pores (>20 microm), and with rigid structures on small (10 microL) and large (200 microL) pipette tips by photopolymerization. We further showed that, with minor modifications, various functionalized particles (5-20 microm) can be added to form stable emulsions and successfully encapsulated into the monoliths for qualitative and quantitative solid-phase microextractions for a diverse application. Due to high permeability and large surface area, quick equilibration can be achieved by pipetting to yield high recovery rates. Using tryptic digests of ovalbumin as the standard, we obtained a recovery yield of 90-109% (RSD: 10-16%) with a loading capacity of 3 mug for desalting tips immobilized with C18 beads. Using tryptic digests of beta-casein and alpha-casein as standards, we showed that phosphopeptides were substantially enriched by tips immobilized with immobilized metal affinity chromatography or TiO(2) materials. Using estrogenic compounds as standards, we obtained a recovery yield of 95-108% (RSD: 10-12%) and linear calibration curves ranging from 5 to 100 ng (R(2)>0.99) for Waters Oasis HLB tips immobilized with hydrophilic beads. PMID:19203757

  5. Optically Pumped NMR Studies of Mechanically Induced Strain in GaAs Films

    NASA Astrophysics Data System (ADS)

    Bowers, Clifford; Wood, Ryan; Tokarski, John, III; McCarthy, Lauren; Saha, Dipta; Stanton, Christopher; Moreno, Jesus

    2015-03-01

    We present a new methodology for measuring strain in semiconductor films based on optically pumped NMR (OPNMR). Single crystals of GaAs were epoxy bonded to Si wafers at 100 °C. The GaAs is then variably thinned by selective chemical etching. Upon cooling, biaxial tensile strains are induced in the GaAs films since the coefficient of thermal expansion in GaAs is different than in the Si support. OPNMR experiments were carried out at 6-10 K. The OPNMR spectra are selective to nuclei within a photon penetration depth from the surface. When mounted on a 0.635 mm thick Si support, the strain, which is proportional to the observed quadrupole splitting, is found to decrease with increasing thickness of the GaAs films and appears to approach a residual value. When the same GaAs film is mounted on a thicker 5mm Si block, the strain increased. To explain the observations, we consider effects of dislocation relaxation of strain and bending of the composite. The interface strain extracted from the measurements is 5.5 × 10-4, in good agreement with the value estimated using the differential thermal contraction of Si and GaAs. The strain resolution of the technique is about 10-5 in GaAs.

  6. Polycondensation of boron- and nitrogen-codoped holey graphene monoliths from molecules: carbocatalysts for selective oxidation.

    PubMed

    Li, Xin-Hao; Antonietti, Markus

    2013-04-22

    A simple but powerful chemical process--the copolymerization of biomass (glucose) and boric acid as templated by dicyandiamide (see picture)--was used to fabricate high-quality doped graphene monoliths with through-plane nanopores. The holey graphene monoliths had a high surface area and showed excellent performance as metal-free carbocatalysts for selective oxidation. PMID:23526626

  7. GaAs and 3-5 compound solar cells status and prospects for use in space

    NASA Technical Reports Server (NTRS)

    Flood, D. J.; Brinker, D. J.

    1984-01-01

    Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.

  8. Fracture mechanics evaluation of GaAs

    NASA Technical Reports Server (NTRS)

    Chen, C. P.

    1984-01-01

    A data base of mechanical and fracture properties for GaAs was generated. The data for single crystal GaAs will be used to design reusable GaAs solar modules. Database information includes; (1) physical property characterizations; (2) fracture behavior evaluations; and (3) strength of cells determined as a function of cell processing and material parameters.

  9. Design of a Broadband Millimeter-Wave Monolithic IQ Mixer

    NASA Astrophysics Data System (ADS)

    Xu, Leijun; Wang, Zhigong; Li, Qin

    2010-05-01

    A 26˜40 GHz millimeter-wave monolithic passive IQ mixer was designed by using Win’s 0.15-µm GaAs pHEMT process. It utilizes a ring diode structure, and the performance can be improved effectively by a modified Marchand balun and U-type coupled lines. Through on-wafer measurement, the mixer shows a conversion loss of 6.6˜9 dB over a bandwidth of 26˜40 GHz, an IF bandwidth from DC to 6 GHz, an image rejection ratio of 21˜30 dB, an LO-RF isolation of above 24 dB, an LO-IF isolation of above 35 dB, and an RF-IF isolation of above 25 dB.

  10. Optimal parameters of monolithic high-contrast grating mirrors.

    PubMed

    Marciniak, Magdalena; Gębski, Marcin; Dems, Maciej; Haglund, Erik; Larsson, Anders; Riaziat, Majid; Lott, James A; Czyszanowski, Tomasz

    2016-08-01

    In this Letter a fully vectorial numerical model is used to search for the construction parameters of monolithic high-contrast grating (MHCG) mirrors providing maximal power reflectance. We determine the design parameters of highly reflecting MHCG mirrors where the etching depth of the stripes is less than two wavelengths in free space. We analyze MHCGs in a broad range of real refractive index values corresponding to most of the common optoelectronic materials in use today. Our results comprise a complete image of possible highly reflecting MHCG mirror constructions for potential use in optoelectronic devices and systems. We support the numerical analysis by experimental verification of the high reflectance via a GaAs MHCG designed for a wavelength of 980 nm. PMID:27472602

  11. Monolithic microcircuit techniques and processes

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1972-01-01

    Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

  12. Optoelectronic devices toward monolithic integration

    NASA Astrophysics Data System (ADS)

    Ghergia, V.

    1992-12-01

    Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

  13. Comparison of soil-monolith extraction techniques

    NASA Astrophysics Data System (ADS)

    Meissner, R.; Rupp, H.; Weller, U.; Vogel, H.-J.

    2009-04-01

    the soil monolith employing a rotary cutting system. This procedure should avoid structural damages and substantially reduces the necessary technical expenditure during monolith extraction. This "cutting" technology has been used successfully for different soil types (from gravel to sand to clay including contaminated sites) and for different lysimeter sizes (surface area 0.1-2 m2 and depths of 0.5-3.0 m). There is evidence in literature that lateral water and solute fluxes cannot - or only insufficient - be examined with conventional lysimeters. Lateral fluxes are of particular importance in groundwater dominated systems, as peat soils (fens or Histosols). To investigate lateral transport processes a box-shaped stainless steel lysimeter vessel (4 m long, 1 m width and 1.5 m depth) was constructed. The most challenging task of the extraction procedure was the horizontal sliding of the lysimeter vessel through the natural peat soil. At the front of the vessel a cutting tool assists in carving the soil monolith out of the peat, both vertically and at the base of the vessel. The yet unfilled vessel was inserted at the extraction site into an already prepared starting pit and aligned to a guiding system (guide tracks) adjustable in three axes. Serrated knife bars were used for cutting. A hydraulic plunger was used to support the cutting procedure. The whole horizontal extraction technology will be described and demonstrated. For the evaluation of the different extraction technologies with respect to the potential disturbance of soil structure we applied the different techniques for the same soil type (Eutric Fluvisol). At natural site conditions soil monoliths with the same size have been extracted with the "hammering", the "pressing" and the "cutting" technology. The soil structure close to the vessel wall was recorded using X-ray tomography at a resolution of some 0.1 mm. The results will be demonstrated and discussed.

  14. Sol-gel derived ? thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Arscott, S.; Smith, N.; Kurchania, R.; Milne, S. J.; Miles, R. E.

    1998-02-01

    Sol-gel derived thin films of lead zirconate titanate (PZT) have been fabricated on a platinized GaAs substrate using a propane-1,3-diol based sol-gel route. PZT can be used as the piezoelectric component in bulk acoustic wave devices for monolithic microwave integrated circuit applications. A 100 nm silicon nitride buffer layer was deposited onto the GaAs by plasma-enhanced chemical vapour deposition in order to prevent gallium and arsenic outdiffusion during film fabrication. Rapid thermal processing (RTP) techniques were employed to decompose thermally the sol-gel layer to PZT in a further effort to minimize problems of gallium and arsenic outdiffusion. Adhesion between the bottom electrode and substrate was found to improve when an intermediate titanium layer deposited between the platinum and silicon nitride was oxidized prior to deposition of the platinum electrode. A crystalline PZT film was produced on the 0268-1242/13/2/016/img9 substrate configuration by firing the sol-gel coating at 0268-1242/13/2/016/img10C for 10 s using RTP. A single deposition of sol resulted in a film having a thickness of 0268-1242/13/2/016/img11. Ferroelectric hysteresis measurements yielded average values of remanant polarization and coercive field of 0268-1242/13/2/016/img12 and 0268-1242/13/2/016/img13 respectively.

  15. Synthesis of transparent nanocomposite monoliths for gamma scintillation

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Hajagos, Tibor J.; Kishpaugh, David; Jin, Yunxia; Hu, Wei; Chen, Qi; Pei, Qibing

    2015-08-01

    During the past decade, inorganic nanoparticles/polymer nanocomposites have been intensively studied to provide a low cost, high performance alternative for gamma scintillation. However, the aggregation of nanoparticles often occurs even at low nanoparticle concentrations and thus deteriorates the transparency and performance of these nanocomposite scintillators. Here we report an efficient fabrication protocol of transparent nanocomposite monoliths based on surface modified hafnium oxide nanoparticles. Using hafnium oxide nanoparticles with surface-grafted methacrylate groups, highly transparent bulk-size nanocomposite monoliths (2 mm thick, transmittance at 550 nm >75%) are fabricated with nanoparticle loadings up to 40 wt% (net hafnium wt% up to 28.5%). These nanocomposite monoliths of 1 cm diameter and 2 mm thickness are capable of producing a full energy photopeak for 662 keV gamma rays, with the best deconvoluted photopeak energy resolution reaching 8%.

  16. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure

    PubMed Central

    2013-01-01

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields. PMID:24093494

  17. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure.

    PubMed

    Sun, Xiaoxia; Uyama, Hiroshi

    2013-01-01

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields. PMID:24093494

  18. A poly(vinyl alcohol)/sodium alginate blend monolith with nanoscale porous structure

    NASA Astrophysics Data System (ADS)

    Sun, Xiaoxia; Uyama, Hiroshi

    2013-10-01

    A stimuli-responsive poly(vinyl alcohol) (PVA)/sodium alginate (SA) blend monolith with nanoscale porous (mesoporous) structure is successfully fabricated by thermally impacted non-solvent induced phase separation (TINIPS) method. The PVA/SA blend monolith with different SA contents is conveniently fabricated in an aqueous methanol without any templates. The solvent suitable for the fabrication of the present blend monolith by TINIPS is different with that of the PVA monolith. The nanostructural control of the blend monolith is readily achieved by optimizing the fabrication conditions. Brunauer Emmett Teller measurement shows that the obtained blend monolith has a large surface area. Pore size distribution plot for the blend monolith obtained by the non-local density functional theory method reveals the existence of the nanoscale porous structure. Fourier transform infrared analysis reveals the strong interactions between PVA and SA. The pH-responsive property of the blend monolith is investigated on the basis of swelling ratio in different pH solutions. The present blend monolith of biocompatible and biodegradable PVA and SA with nanoscale porous structure has large potential for applications in biomedical and environmental fields.

  19. Comparison of perfusion media and monoliths for protein and virus-like particle chromatography.

    PubMed

    Wu, Yige; Abraham, Dicky; Carta, Giorgio

    2016-05-20

    Structural and performance characteristics of perfusion chromatography media (POROS HS 20 and 50) and those of a polymethacrylate monolith (CIM SO3-1 tube monolith column) are compared for protein and virus-like particle chromatography using 1mL columns. Axial flow columns are used for POROS while the monolith has a radial flow configuration, which provides comparable operating pressures. The POROS beads contain a bimodal distribution of pore sizes, some as large as 0.5μm, which allow a small fraction of the mobile phase to flow within the particles, while the monolith contains 1-2μm flow channels. For proteins (lysozyme and IgG), the dynamic binding capacity of the POROS columns is more than twice that of the monolith at longer residence times. While the DBC of the POROS HS 50 column decreases at shorter residence times, the DBC of the POROS HS 20 column for IgG remains nearly twice that of the monolith at residence times at least as low as 0.2min as a result of intraparticle convection. Protein recoveries are comparable for all three columns. For VLPs, however, the eluted peaks are broader and recovery is lower for the monolith than for the POROS columns and is dependent on the direction of flow in the monolith, which is attributed to denser layer observed by SEM at the inlet surface of the monolith that appears to trap VLPs when loading in the normal flow direction. PMID:27106397

  20. New Graphene Form of Nanoporous Monolith for Excellent Energy Storage.

    PubMed

    Bi, Hui; Lin, Tianquan; Xu, Feng; Tang, Yufeng; Liu, Zhanqiang; Huang, Fuqiang

    2016-01-13

    Extraordinary tubular graphene cellular material of a tetrahedrally connected covalent structure was very recently discovered as a new supermaterial with ultralight, ultrastiff, superelastic, and excellent conductive characteristics, but no high specific surface area will keep it from any next-generation energy storage applications. Herein, we prepare another new graphene monolith of mesoporous graphene-filled tubes instead of hollow tubes in the reported cellular structure. This graphene nanoporous monolith is also composed of covalently bonded carbon network possessing high specific surface area of ∼1590 m(2) g(-1) and electrical conductivity of ∼32 S cm(-1), superior to graphene aerogels and porous graphene forms self-assembled by graphene oxide. This 3D graphene monolith can support over 10 000 times its own weight, significantly superior to CNT and graphene cellular materials with a similar density. Furthermore, pseudocapacitance-active functional groups are introduced into the new nanoporous graphene monolith as an electrode material in electrochemical capacitors. Surprisingly, the electrode of 3D mesoporous graphene has a specific capacitance of 303 F g(-1) and maintains over 98% retention after 10 000 cycles, belonging to the list for the best carbon-based active materials. The macroscopic mesoporous graphene monolith suggests the great potential as an electrode for supercapacitors in energy storage areas. PMID:26641709

  1. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films

    NASA Astrophysics Data System (ADS)

    Wood, Adam W.; Collar, Kristen; Li, Jincheng; Brown, April S.; Babcock, Susan E.

    2016-03-01

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs1-x Bi x using high angle annular dark field (‘Z-contrast’) imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ˜GaAs embedded in the GaAs1-x Bi x epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (˜4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ˜GaAs to GaAs1-x Bi x appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ˜25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs1-x Bi x film growth.

  2. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    NASA Technical Reports Server (NTRS)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, Sarah; Moriarty, T.; Romero, M. J.

    2007-01-01

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of approx.1 eV. For the last several years, research has been conducted by a number of organizations to develop approx.1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) approx.1- eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1- eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm2) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include

  3. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

    SciTech Connect

    Schmidbauer, M.; Seydmohamadi, Sh.; Wang, Zh.M.; Mazur, Yu.I.; Salamo, G.J.; Grigoriev, D.; Schaefer, P.; Koehler, R.; Hanke, M.

    2006-02-17

    Anisotropic surface diffusion and strain are used to explain the formation of three-dimensional (In,Ga)As quantum dot lattices. The diffusion characteristics of the surface, coupled with the elastic anisotropy of the matrix, provides an excellent opportunity to influence the dot positions. In particular, quantum dots that are laterally organized into long chains or chessboard two-dimensional arrays vertically organized with strict vertical ordering or vertical ordering that is inclined to the sample surface normal are accurately predicted and observed.

  4. A chitosan coated monolith for nucleic acid capture in a thermoplastic microfluidic chip

    PubMed Central

    Kendall, Eric L.; Wienhold, Erik; DeVoe, Don L.

    2014-01-01

    A technique for microfluidic, pH modulated DNA capture and purification using chitosan functionalized glycidyl methacrylate monoliths is presented. Highly porous polymer monoliths are formed and subsequently functionalized off-chip in a batch process before insertion into thermoplastic microchannels prior to solvent bonding, simplifying the overall fabrication process by eliminating the need for on-chip surface modifications. The monolith anchoring method allows for the use of large cross-section monoliths enabling high flowrates and high DNA capture capacity with a minimum of added design complexity. Using monolith capture elements requiring less than 1 mm2 of chip surface area, loading levels above 100 ng are demonstrated, with DNA capture and elution efficiency of 54.2% ± 14.2% achieved. PMID:25379094

  5. Monolithic metal oxide transistors.

    PubMed

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics. PMID:25777338

  6. Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

    NASA Technical Reports Server (NTRS)

    Partain, L. D.; Chung, B.-C.; Virshup, G. F.; Schultz, J. C.; Macmillan, H. F.; Ristow, M. Ladle; Kuryla, M. S.; Bertness, K. A.

    1991-01-01

    Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

  7. Monolithic supports with unique geometries and enhanced mass transfer.

    SciTech Connect

    Stuecker, John Nicholas; Ferrizz, Robert Matthew; Cesarano, Joseph, III; Miller, James Edward

    2004-01-01

    The catalytic combustion of natural gas has been the topic of much research over the past decade. Interest in this technology results from a desire to decrease or eliminate the emissions of harmful nitrogen oxides (NOX) from gas turbine power plants. A low-pressure drop catalyst support, such as a ceramic monolith, is ideal for this high-temperature, high-flow application. A drawback to the traditional honeycomb monoliths under these operating conditions is poor mass transfer to the catalyst surface in the straight-through channels. 'Robocasting' is a unique process developed at Sandia National Laboratories that can be used to manufacture ceramic monoliths with alternative 3-dimensional geometries, providing tortuous pathways to increase mass transfer while maintaining low pressure drops. This report details the mass transfer effects for novel 3-dimensional robocast monoliths, traditional honeycomb-type monoliths, and ceramic foams. The mass transfer limit is experimentally determined using the probe reaction of CO oxidation over a Pt / {gamma}-Al{sub 2}O{sub 3} catalyst, and the pressure drop is measured for each monolith sample. Conversion versus temperature data is analyzed quantitatively using well-known dimensionless mass transfer parameters. The results show that, relative to the honeycomb monolith support, considerable improvement in mass transfer efficiency is observed for robocast samples synthesized using an FCC-like geometry of alternating rods. Also, there is clearly a trade-off between enhanced mass transfer and increased pressure drop, which can be optimized depending on the particular demands of a given application.

  8. Configuration, Dimension and Density Control of 3-D Gold Nanostructures on Various Type-B GaAs Surfaces by the Systematic Variation of Annealing Temperature, Annealing Duration and Deposition Amount

    NASA Astrophysics Data System (ADS)

    Lee, Daewoo; Sui, Mao; Li, Ming-Yu; Pandey, Puran; Zhang, Quanzhen; Kim, Eun-Soo; Lee, Jihoon

    2015-09-01

    Metallic nanoparticles have received extensive research attention due to their potential to be utilized in catalytic, electronic and optical applications. Tunable feature of quantum effect related to the configuration, dimension as well as the density of nanoparticles makes them appropriate building blocks for their applications at the nano-scale. In this paper, we systematically investigate the fabrication of self-assembled Au nanoparticles on high-index type-B GaAs (n11), where n is 9, 8, 4, and 2. By means of varying annealing temperature, Au deposition amount and annealing duration, the evolution of Au nanoparticles in terms of the average height, lateral diameter and average density is systematically studied. We observe that the variation of annealing temperature leads to an abrupt configuration evolution from the wiggly Au nanostructures to the round-dome shaped nanoparticles due to the limited and/or enhanced surface diffusion at various temperatures. Meanwhile, the variation of deposition amount leads to a wide range of dimensions of Au nanoparticles as a result of the size increase and the corresponding density decrease. Furthermore, based on the annealing duration control, the size of Au nanoparticles tends to be gradually increased owing to the Ostwald-ripening. Meanwhile, the effect of surface index on the size and density is also witnessed. The results are systematically analyzed by using the atomic force microscope images, energy-dispersive X-ray spectroscopy spectra and maps, Fourier filter transforms power spectra, cross-sectional line-profiles and size and density plots.

  9. Relationship between planar GaAs nanowire growth direction and substrate orientation

    NASA Astrophysics Data System (ADS)

    Dowdy, Ryan S.; Walko, Donald A.; Li, Xiuling

    2013-01-01

    Planar GaAs nanowires are epitaxially grown on GaAs substrates of various orientations, via the Au-catalyzed vapor-liquid-solid mechanism using metal organic chemical vapor deposition. The nanowire geometry and growth direction are examined using scanning electron microscopy and x-ray microdiffraction. A hypothesis relating the planar nanowire growth direction to the surface projections of <111> B crystal directions is proposed. GaAs planar nanowire growth on vicinal substrates is performed to test this hypothesis. Good agreement between the experimental results and the projection model is found.

  10. GaAs FET MMIC low-noise amplifiers for satellite communications

    NASA Astrophysics Data System (ADS)

    Hung, H.-L.; Enobakhare, E.; Abita, J.; McNally, P.; Mahle, C.

    1985-12-01

    One- and two-stage, X-band, low-noise, GaAs FET monolithic amplifier modules have been developed. These amplifier chips include all dc-blocking capacitors and bias networks. A cascaded, two-chip, two-stage amplifier module provides a noise figure of 4 dB and an associated gain of 30 dB from 9.5 to 11.7 GHz. A two-stage 15-dB gain block has also been developed for 9 to 13 GHz, with a chip size of 1.7 x 1.2 mm.

  11. Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

    SciTech Connect

    Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

    2011-03-21

    We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

  12. Edge chipping and flexural resistance of monolithic ceramics☆

    PubMed Central

    Zhang, Yu; Lee, James J.-W.; Srikanth, Ramanathan; Lawn, Brian R.

    2014-01-01

    Objective Test the hypothesis that monolithic ceramics can be developed with combined esthetics and superior fracture resistance to circumvent processing and performance drawbacks of traditional all-ceramic crowns and fixed-dental-prostheses consisting of a hard and strong core with an esthetic porcelain veneer. Specifically, to demonstrate that monolithic prostheses can be produced with a much reduced susceptibility to fracture. Methods Protocols were applied for quantifying resistance to chipping as well as resistance to flexural failure in two classes of dental ceramic, microstructurally-modified zirconias and lithium disilicate glass–ceramics. A sharp indenter was used to induce chips near the edges of flat-layer specimens, and the results compared with predictions from a critical load equation. The critical loads required to produce cementation surface failure in monolithic specimens bonded to dentin were computed from established flexural strength relations and the predictions validated with experimental data. Results Monolithic zirconias have superior chipping and flexural fracture resistance relative to their veneered counterparts. While they have superior esthetics, glass–ceramics exhibit lower strength but higher chip fracture resistance relative to porcelain-veneered zirconias. Significance The study suggests a promising future for new and improved monolithic ceramic restorations, with combined durability and acceptable esthetics. PMID:24139756

  13. Pore volume accessibility of particulate and monolithic stationary phases.

    PubMed

    Urban, Jiří

    2015-05-29

    A chromatographic characterization of pore volume accessibility for both particulate and monolithic stationary phases is presented. Size-exclusion calibration curves have been used to determine the pore volume fraction that is accessible for six alkylbenzenes and twelve polystyrene standards in tetrahydrofuran as the mobile phase. Accessible porosity has been then correlated with the size of the pores from which individual compounds are just excluded. I have determined pore volume accessibility of commercially available columns packed with fully and superficially porous particles, as well as with silica-based monolithic stationary phase. I also have investigated pore accessibility of polymer-based monolithic stationary phases. Suggested protocol is used to characterize pore formation at the early stage of the polymerization, to evaluate an extent of hypercrosslinking during modification of pore surface, and to characterize the pore accessibility of monolithic stationary phases hypercrosslinked after an early termination of polymerization reaction. Pore volume accessibility was also correlated to column efficiency of both particulate and monolithic stationary phases. PMID:25892635

  14. Silver-coated monolithic columns for separation in radiopharmaceutical applications.

    PubMed

    Sedlacek, Ondrej; Kucka, Jan; Svec, Frantisek; Hruby, Martin

    2014-04-01

    In this study, we demonstrate the preparation of a macroporous monolithic column containing anchored silver nanoparticles and its use for the elimination of excess radioiodine from the radiolabeled pharmaceutical. The poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith was first functionalized with cystamine and the free thiol groups liberated by reaction with borohydride. In-house-prepared silver nanoparticles were then attached by interaction with the surface thiols. The deiodization process was demonstrated with the commonly used radiopharmaceutical m-iodobenzylguanidine labeled with radionuclide iodine-125. PMID:24478196

  15. InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Scheiman, David A.; Murray, Christopher S.; Riley, David R.

    2004-01-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

  16. Allyl-silica Hybrid Monoliths For Chromatographic Application

    NASA Astrophysics Data System (ADS)

    Guo, Wenjuan

    Column technology continues to be the most investigated topics in the separation world, since the column is the place where the chromatographic separation happens, making it the heart of the separation system. Allyl-silica hybrid monolithic material has been exploited as support material and potential stationary phases for liquid chromatography; the stationary phase anchored to the silica surface by Si-C bond, which is more pH stable than traditional stationary phase. First, nuclear magnetic resonance spectroscopy has been used to study the sol in the synthesis of allyl-silica hybrid monoliths. Allyl-trimethoxysilane (allyl-TrMOS), dimethyldimethoxysilane (DMDMOS) and tetramethoxysilane (TMOS) have been served as co-precursors in the sol-gel synthesis of organo-silica hybrid monolithic columns for liquid chromatography (LC). 29Si nuclear magnetic resonance (NMR) and 1H NMR spectroscopy were employed to monitor reaction profiles for the acid-catalyzed hydrolysis and initial condensation reactions of the individual precursor and the hybrid system. 29Si-NMR has also been used to identify different silane species formed during the reactions. The overall hydrolysis rate has been found to follow the trend DMDMOS > allyl-TrMOS > TMOS, if each precursor is reacted individually (homo-polymerization). Precursors show different hydrolysis rate when reacted together in the hybrid system than they are reacted individually. Cross-condensation products of TMOS and DMDMOS (QD) arise about 10 minutes of initiation of the reaction. The allyl-silica monolithic columns for capillary liquid chromatography can only be prepared in capillaries with 50 im internal diameter with acceptable performance. One of the most prominent problems related to the synthesis of silica monolithic structures is the volume shrinkage. The synthesis of allylfunctionalized silica hybrid monolithic structures has been studied in an attempt to reduce the volume shrinkage during aging, drying and heat treatment

  17. Shear bond strength of indirect composite material to monolithic zirconia

    PubMed Central

    2016-01-01

    PURPOSE This study aimed to evaluate the effect of surface treatments on bond strength of indirect composite material (Tescera Indirect Composite System) to monolithic zirconia (inCoris TZI). MATERIALS AND METHODS Partially stabilized monolithic zirconia blocks were cut into with 2.0 mm thickness. Sintered zirconia specimens were divided into different surface treatment groups: no treatment (control), sandblasting, glaze layer & hydrofluoric acid application, and sandblasting + glaze layer & hydrofluoric acid application. The indirect composite material was applied to the surface of the monolithic zirconia specimens. Shear bond strength value of each specimen was evaluated after thermocycling. The fractured surface of each specimen was examined with a stereomicroscope and a scanning electron microscope to assess the failure types. The data were analyzed using one-way analysis of variance (ANOVA) and Tukey LSD tests (α=.05). RESULTS Bond strength was significantly lower in untreated specimens than in sandblasted specimens (P<.05). No difference between the glaze layer and hydrofluoric acid application treated groups were observed. However, bond strength for these groups were significantly higher as compared with the other two groups (P<.05). CONCLUSION Combined use of glaze layer & hydrofluoric acid application and silanization are reliable for strong and durable bonding between indirect composite material and monolithic zirconia. PMID:27555895

  18. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    NASA Technical Reports Server (NTRS)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  19. Monolithically integrated optical displacement sensor based on triangulation and optical beam deflection.

    PubMed

    Higurashi, E; Sawada, R; Ito, T

    1999-03-20

    A monolithically integrated optical displacement sensor based on triangulation and optical beam deflection is reported. This sensor is simple and consists of only a laser diode, a polyimide waveguide, and a split detector (a pair of photodiodes) upon a GaAs substrate. The resultant prototype device is extremely small (750 microm x 800 microm). Experiments have shown that this sensor can measure the displacement of a mirror with resolution of better than 4 nm. Additionally, we have experimentally demonstrated both axial and lateral displacement measurements when we used a cylindrical micromirror (diameter, 125 microm) as a movable external object. PMID:18305799

  20. Microwave monolithic integrated circuit development for future spaceborne phased array antennas

    NASA Technical Reports Server (NTRS)

    Anzic, G.; Kascak, T. J.; Downey, A. N.; Liu, D. C.; Connolly, D. J.

    1984-01-01

    The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

  1. Method of monolithic module assembly

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-01-01

    Methods for "monolithic module assembly" which translate many of the advantages of monolithic module construction of thin-film PV modules to wafered c-Si PV modules. Methods employ using back-contact solar cells positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The methods of the invention allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  2. Recent Progress in Monolithic Silica Columns for High-Speed and High-Selectivity Separations

    NASA Astrophysics Data System (ADS)

    Ikegami, Tohru; Tanaka, Nobuo

    2016-06-01

    Monolithic silica columns have greater (through-pore size)/(skeleton size) ratios than particulate columns and fixed support structures in a column for chemical modification, resulting in high-efficiency columns and stationary phases. This review looks at how the size range of monolithic silica columns has been expanded, how high-efficiency monolithic silica columns have been realized, and how various methods of silica surface functionalization, leading to selective stationary phases, have been developed on monolithic silica supports, and provides information on the current status of these columns. Also discussed are the practical aspects of monolithic silica columns, including how their versatility can be improved by the preparation of small-sized structural features (sub-micron) and columns (1 mm ID or smaller) and by optimizing reaction conditions for in situ chemical modification with various restrictions, with an emphasis on recent research results for both topics.

  3. Recent Progress in Monolithic Silica Columns for High-Speed and High-Selectivity Separations.

    PubMed

    Ikegami, Tohru; Tanaka, Nobuo

    2016-06-12

    Monolithic silica columns have greater (through-pore size)/(skeleton size) ratios than particulate columns and fixed support structures in a column for chemical modification, resulting in high-efficiency columns and stationary phases. This review looks at how the size range of monolithic silica columns has been expanded, how high-efficiency monolithic silica columns have been realized, and how various methods of silica surface functionalization, leading to selective stationary phases, have been developed on monolithic silica supports, and provides information on the current status of these columns. Also discussed are the practical aspects of monolithic silica columns, including how their versatility can be improved by the preparation of small-sized structural features (sub-micron) and columns (1 mm ID or smaller) and by optimizing reaction conditions for in situ chemical modification with various restrictions, with an emphasis on recent research results for both topics. PMID:27306311

  4. Direct Cross-Linking of Au/Ag Alloy Nanoparticles into Monolithic Aerogels for Application in Surface-Enhanced Raman Scattering.

    PubMed

    Gao, Xiaonan; Esteves, Richard J Alan; Nahar, Lamia; Nowaczyk, Jordan; Arachchige, Indika U

    2016-05-25

    The direct cross-linking of Au/Ag alloy nanoparticles (NPs) into high surface area, mesoporous Au/Ag aerogels via chemical oxidation of the surface ligands is reported. The precursor alloy NPs with composition-tunable morphologies were produced by galvanic replacement of the preformed Ag hollow NPs. The effect of Au:Ag molar ratio on the NP morphology and surface plasmon resonance has been thoroughly investigated and resulted in smaller Au/Ag alloy NPs (4-8 nm), larger Au/Ag alloy hollow NPs (40-45 nm), and Au/Ag alloy hollow particles decorated with smaller Au NPs (2-5 nm). The oxidative removal of surfactant ligands, followed by supercritical drying, is utilized to construct large (centimeter to millimeter) self-supported Au/Ag alloy aerogels. The resultant assemblies exhibit high surface areas (67-73 m(2)/g), extremely low densities (0.051-0.055 g/cm(3)), and interconnected mesoporous (2-50 nm) networks, making them of great interest for a number of new technologies. The influence of mesoporous gel morphology on surface-enhanced Raman scattering (SERS) has been studied using Rhodamine 101 (Rd 101) as the probe molecule. The alloy aerogels exhibit SERS signal intensities that are 10-42 times higher than those achieved from the precursor Au/Ag alloy NPs. The Au/Ag alloy aerogel III exhibits SERS sensing capability down to 1 nM level. The increased signal intensities attained for alloy aerogels are attributed to highly porous gel morphology and enhanced surface roughness that can potentially generate a large number of plasmonic hot spots, creating efficient SERS substrates for future applications. PMID:27142886

  5. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation. PMID:25686555

  6. Monolithic fiber optic sensor assembly

    SciTech Connect

    Sanders, Scott

    2015-02-10

    A remote sensor element for spectrographic measurements employs a monolithic assembly of one or two fiber optics to two optical elements separated by a supporting structure to allow the flow of gases or particulates therebetween. In a preferred embodiment, the sensor element components are fused ceramic to resist high temperatures and failure from large temperature changes.

  7. Formation and properties of porous GaAs

    SciTech Connect

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  8. Sub-additivity in Electron Emission from GaAs

    NASA Astrophysics Data System (ADS)

    Brunkow, Evan; Clayburn, Nathan; Becker, Maria; Jones, Eric; Batelaan, Herman; Gay, Timothy

    2016-05-01

    When two spatially-overlapped laser pulses (775 nm center wavelength, 75 fs duration) are incident on an untreated <100> GaAs crystal surface, the electron emission rate depends on the temporal separation between the two pulses. We have shown that for delays between 0.2 and 1000ps, the emission rate is ``sub-additive'', i.e., is lower than when the beams have separation >> 1 ns. We believe the cause of this sub-additivity is an increase in reflectance and transmittance due to electrons occupying the excited state of the GaAs. We are now able to manipulate the magnitude of the sub-additivity by changing the number of electrons that are in the excited state. Sub-additivity is not observed with tungsten tip surfaces which have no excited state. Funded by NSF PHY-1505794, EPSCoR IIIA-1430519, and NSF 1306565 (HB).

  9. The effect of the nature of the stationary phase on the gas chromatographic retention of sorbates in monolithic columns

    NASA Astrophysics Data System (ADS)

    Shiryaeva, V. E.; Korolev, A. A.; Popova, T. P.; Kurganov, A. A.

    2009-07-01

    Retention factors were measured on silica gel, ethylene glycol dimethacrylate, and divinylbenzene monolithic columns for five groups of sorbates with different polarities. The retention factors of sorbates did not correlate directly with the polarity of the stationary phase probably because of differences in inner surface areas of sorbates accessible to sorbates. For the ethylene glycol dimethacrylate and divinylbenzene monoliths, the “methylene” selectivity was approximately the same and appreciably higher than for the silica gel monolith when helium was used as a carrier gas and approximately the same for monoliths of all types when the carrier gas was CO2.

  10. In situ Fabrication of Monolithic Copper Azide

    NASA Astrophysics Data System (ADS)

    Li, Bing; Li, Mingyu; Zeng, Qingxuan; Wu, Xingyu

    2016-04-01

    Fabrication and characterization of monolithic copper azide were performed. The monolithic nanoporous copper (NPC) with interconnected pores and nanoparticles was prepared by decomposition and sintering of the ultrafine copper oxalate. The preferable monolithic NPC can be obtained through decomposition and sintering at 400°C for 30 min. Then, the available monolithic NPC was in situ reacted with the gaseous HN3 for 24 h and the monolithic NPC was transformed into monolithic copper azide. Additionally, the copper particles prepared by electrodeposition were also reacted with the gaseous HN3 under uniform conditions as a comparison. The fabricated monolithic copper azide was characterized by Fourier transform infrared (FTIR), inductively coupled plasma-optical emission spectrometry (ICP-OES), and differential scanning calorimetry (DSC).

  11. On the dissolution properties of GaAs in Ga

    NASA Technical Reports Server (NTRS)

    Davidson, M. C.; Moynahan, A. H.

    1977-01-01

    The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

  12. Monolithic Hydrogen Peroxide Catalyst Bed Development

    NASA Technical Reports Server (NTRS)

    Ponzo, J. B.

    2003-01-01

    With recent increased industry and government interest in rocket grade hydrogen peroxide as a viable propellant, significant effort has been expended to improve on earlier developments. This effort has been predominately centered in improving heterogeneous. typically catalyst beds; and homogeneous catalysts, which are typically solutions of catalytic substances. Heterogeneous catalyst beds have traditionally consisted of compressed wire screens plated with a catalytic substance, usually silver, and were used m many RCS applications (X-1, Mercury, and Centaur for example). Aerojet has devised a heterogeneous catalyst design that is monolithic (single piece), extremely compact, and has pressure drops equal to or less than traditional screen beds. The design consists of a bonded stack of very thin, photoetched metal plates, silver coated. This design leads to a high surface area per unit volume and precise flow area, resulting in high, stable, and repeatable performance. Very high throughputs have been demonstrated with 90% hydrogen peroxide. (0.60 lbm/s/sq in at 1775-175 psia) with no flooding of the catalyst bed. Bed life of over 900 seconds has also been demonstrated at throughputs of 0.60 lbm/s/sq in across varying chamber pressures. The monolithic design also exhibits good starting performance, short break-in periods, and will easily scale to various sizes.

  13. Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

    PubMed

    Yong, Chaw Keong; Noori, Keian; Gao, Qiang; Joyce, Hannah J; Tan, H Hoe; Jagadish, Chennupati; Giustino, Feliciano; Johnston, Michael B; Herz, Laura M

    2012-12-12

    The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors. PMID:23171081

  14. An ultra-sensitive microfluidic immunoassay using living radical polymerization and porous polymer monoliths.

    SciTech Connect

    Abhyankar, Vinay V.; Singh, Anup K.; Hatch, Anson V.

    2010-07-01

    We present a platform that combines patterned photopolymerized polymer monoliths with living radical polymerization (LRP) to develop a low cost microfluidic based immunoassay capable of sensitive (low to sub pM) and rapid (<30 minute) detection of protein in 100 {micro}L sample. The introduction of LRP functionality to the porous monolith allows one step grafting of functionalized affinity probes from the monolith surface while the composition of the hydrophilic graft chain reduces non-specific interactions and helps to significantly improve the limit of detection.

  15. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Vernon, S. M.; Wolfson, R. G.; Tobin, S. P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  16. Enhanced thermoelectric figure of merit in thin GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Zou, Xiaolong; Chen, Xiaobin; Huang, Huaqing; Xu, Yong; Duan, Wenhui

    2015-05-01

    Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or zb), size of NWs, and temperature. Although bulk GaAs is a well-known poor thermoelectric material, the thermoelectric figure of merit, ZT, is significantly enhanced in thin GaAs NWs. Typically, the room temperature ZT of a 1.1 nm-diameter GaAs NW reaches as high as 1.34, exhibiting more than 100-fold improvement over the bulk counterpart, which is attributed to both the reduced thermal conduction and enhanced power factor in thin NWs. Adopting their unique electronic characteristics, further enhancement is possible through surface engineering, for example, the introduction of surface roughness or dopants.Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or zb), size of NWs, and temperature. Although bulk GaAs is a well-known poor thermoelectric material, the thermoelectric figure of merit, ZT, is significantly enhanced in thin GaAs NWs. Typically, the room temperature ZT of a 1.1 nm-diameter GaAs NW reaches as high as 1.34, exhibiting more than 100-fold improvement over the bulk counterpart, which is attributed to both the reduced thermal conduction and enhanced power factor in thin NWs. Adopting their unique electronic characteristics, further enhancement is possible through surface engineering, for example, the introduction of surface

  17. GaAs solar cell development

    NASA Technical Reports Server (NTRS)

    Knechtli, R. C.; Kamath, S.; Loo, R.

    1977-01-01

    The motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.

  18. Monolithic-integrated microlaser encoder.

    PubMed

    Sawada, R; Higurashi, E; Ito, T; Ohguchi, O; Tsubamoto, M

    1999-11-20

    We have developed an extremely small integrated microencoder whose sides are less than 1 mm long. It is 1/100 the size of conventional encoders. This microencoder consists of a laser diode, monolithic photodiodes, and fluorinated polyimide waveguides with total internal reflection mirrors. The instrument can measure the relative displacement between a grating scale and the encoder with a resolution of the order of 0.01 microm; it can also determine the direction in which the scale is moving. By using the two beams that were emitted from the two etched mirrors of the laser diode, by monolithic integration of the waveguide and photodiodes, and by fabrication of a step at the edge of the waveguide, we were able to eliminate conventional bulky optical components such as the beam splitter, the quarter-wavelength plate, bulky mirrors, and bulky photodetectors. PMID:18324228

  19. A study of contacts and back-surface reflectors for 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 thermophotovoltaic monolithically interconnected modules

    NASA Astrophysics Data System (ADS)

    Wu, X.; Duda, A.; Carapella, J. J.; Ward, J. S.; Webb, J. D.; Wanlass, M. W.

    1999-03-01

    Thermophotovoltaic (TPV) systems have recently rekindled a high level of interest for a number of applications. In order to meet the requirement of low-temperature (˜1000 °C) TPV systems, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 TPV monolithically interconnected modules (MIMs) have been developed at the National Renewable energy Laboratory (NREL) [1]. The successful fabrication of Ga0.32In0.68As/InAs0.32P0.68 MIMs depends on developing and optimizing of several key processes. Some results regarding the chemical vapor deposition (CVD)-SiO2 insulating layer, selective chemical etch via sidewall profiles, double-layer antireflection coatings, and metallization via interconnects have previously been given elsewhere [2]. In this paper, we report on the study of contacts and back-surface reflectors. In the first part of this paper, Ti/Pd/Ag and Cr/Pd/Ag contact to n-InAs0.32P0.68 and p-Ga0.32In0.68As are investigated. The transfer length method (TLM) was used for measuring of specific contact resistance Rc. The dependence of Rc on different doping levels and different pre-treatment of the two semiconductors will be reported. Also, the adhesion and the thermal stability of Ti/Pd/Ag and Cr/Pd/Ag contacts to n-InAs0.32P0.68 and p-Ga0.32In0.68As will be presented. In the second part of this paper, we discuss an optimum back-surface reflector (BSR) that has been developed for 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 TPV MIM devices. The optimum BSR consists of three layers: ˜1300 Å MgF2 (or ˜1300 Å CVD SiO2) dielectric layer, ˜25 Å Ti adhesion layer, and ˜1500 Å Au reflection layer. This optimum BSR has high reflectance, good adhesion, and excellent thermal stability.

  20. X-ray photoelectron spectroscopy studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Sone, Syuji; Ekawa, Mitsuru; Yasuda, Kazuhito; Sugiura, Yoshiyuki; Saji, Manabu; Tanaka, Akikazu

    1990-02-01

    Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x-ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitaxy. The stoichiometry of GaAs substrates was found to recover by annealing in the H2 environment (500 °C, 5 min), while the surface was initially in an As-rich condition after etching with H2SO4:H2O2:H2O (5:1:1). The preferential adsorption of Te on the GaAs surface was also observed. <100> oriented growth was obtained routinely when the GaAs surface was fully stabilized with Te after the H2 anneal under the above conditions. <111> oriented growth resulted when dimethylcadmium was first introduced after the anneal.

  1. Translucency of monolithic and core zirconia after hydrothermal aging

    PubMed Central

    Fathy, Salma M.; El-Fallal, Abeer A.; El-Negoly, Salwa A.; El Bedawy, Abu Baker

    2015-01-01

    Abstract Objective: To evaluate the hydrothermal aging effect on the translucency of partially stabilized tetragonal zirconia with yttria (Y-TZP) used as monolithic or fully milled zirconia and of core type. Methods: Twenty disc-shaped specimens (1 and 10 mm) for each type of monolithic and core Y-TZP materials were milled and sintered according to the manufacturer’s instruction. The final specimens were divided into two groups according to the type of Y-TZP used. Translucency parameter (TP) was measured over white and black backgrounds with the diffuse reflectance method; X-ray diffraction (XRD) and scanning electron microscope (SEM) were used to analyze the microstructure of both Y-TZP types before and after aging. Data for TP values was statistically analyzed using Student’s t-test. Results: Monolithic Y-TZP showed the highest TP mean value (16.4 ± 0.316) before aging while core Y-TZP showed the lowest TP mean value (7.05 ± 0.261) after aging. There was a significant difference between the two Y-TZP types before and after hydrothermal aging. XRD analysis showed increases in monoclinic content in both Y-TZP surfaces after aging. Conclusion: Monolithic Y-TZP has a higher chance to low-temperature degradation than core type, which may significantly affect the esthetic appearance and translucency hence durability of translucent Y-TZP. PMID:27335897

  2. Preparation of phenylboronate affinity rigid monolith with macromolecular porogen.

    PubMed

    Li, Xiang-Jie; Jia, Man; Zhao, Yong-Xin; Liu, Zhao-Sheng; Akber Aisa, Haji

    2016-03-18

    Boronate-affinity monolithic column was first prepared via polystyrene (PS) as porogen in this work. The monolithic polymer was synthetized using 4-vinylphenylboronic acid (4-VPBA) as functional monomer, ethylene glycol dimethacrylate (EDMA) as crosslinker monomer, and a mixture of PS solution in tetrahydrofuran, the linear macromolecular porogen, and toluene as porogen. Isoquercitrin (ISO) and hyperoside (HYP), isomer diol flavonoid glycosides, can be baseline separated on the poly(VPBA-co-EDMA) monolith. The effect of polymerization variables on the selectivity factor, e.g., the ratio of monomer to crosslinker (M/C), the amount of PS and the molecular weight of macromolecular porogen was investigated. The surface properties of the monolithic polymer were characterized by scanning electron microscopy and nitrogen adsorption. The best polymerization condition was the M/C ratio of 7:3, and the PS concentration of 40 mg/ml. The poly(VPBA-co-EDMA) polymer was also applied to extract cis-diol flavonoid glycosides from the crude extraction of cotton flower. After treated by poly(VPBA-co-EDMA) for solid phase extraction, high purity ISO and HYP (>99.96%) can be obtained with recovery of 83.7% and 78.6%, respectively. PMID:26896914

  3. Oxygen-enhanced wet thermal oxidation of GaAs

    NASA Astrophysics Data System (ADS)

    Bauters, J. F.; Fenlon, R. E.; Seibert, C. S.; Yuan, W.; Plunkett, J. S. B.; Li, J.; Hall, D. C.

    2011-10-01

    An oxygen-enhanced wet thermal oxidation process is used to grow smooth, uniform, insulating native oxides of GaAs. At 420 °C, a maximum linear growth rate of 4.8 nm/min is observed for oxidation in water vapor with 2000 ppm O2 added relative to the N2 carrier gas, with growth ceasing by 7000 ppm. Films as thick as 800 nm with surface roughness as low as 0.2 nm are demonstrated. In fabricated metal-oxide-semiconductor capacitors, a 412 nm thick native oxide film exhibits a factor of ˜2700 reduction in leakage current density at 1 V relative to a direct metal (Au:Ti) to GaAs contact.

  4. Testing a GaAs cathode in SRF gun

    SciTech Connect

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  5. Monolithic Fuel Fabrication Process Development

    SciTech Connect

    C. R. Clark; N. P. Hallinan; J. F. Jue; D. D. Keiser; J. M. Wight

    2006-05-01

    The pursuit of a high uranium density research reactor fuel plate has led to monolithic fuel, which possesses the greatest possible uranium density in the fuel region. Process developments in fabrication development include friction stir welding tool geometry and cooling improvements and a reduction in the length of time required to complete the transient liquid phase bonding process. Annealing effects on the microstructures of the U-10Mo foil and friction stir welded aluminum 6061 cladding are also examined.

  6. Monolithic pattern-sensitive detector

    DOEpatents

    Berger, Kurt W.

    2000-01-01

    Extreme ultraviolet light (EUV) is detected using a precisely defined reference pattern formed over a shallow junction photodiode. The reference pattern is formed in an EUV absorber preferably comprising nickel or other material having EUV- and other spectral region attenuating characteristics. An EUV-transmissive energy filter is disposed between a passivation oxide layer of the photodiode and the EUV transmissive energy filter. The device is monolithically formed to provide robustness and compactness.

  7. Comparison of triethylaluminum, triethylgallium, triethylindium, and triethylantimony on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Heitzinger, John M.; Jackson, M. S.; Ekerdt, J. G.

    1995-01-01

    The surface chemistry of triethylaluminum, triethylgallium, triethylindium, and triethylantimony was studied on GaAs(100) using thermal desorption spectroscopy, static secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy. Ethylene, the major hydrocarbon reaction product, desorbs from the GaAs(100) surface during thermal desorption spectroscopy experiments at 565 K for all four molecules. This indicates an identical rate limiting step for the elimination of ethyl groups from the surface following adsorption of these molecules. We propose that ethyl groups migrate to Ga sites and then undergo reaction at these sites.

  8. Enhanced light absorption in GaAs solar cells with internal Bragg reflectors

    NASA Astrophysics Data System (ADS)

    Tobin, S. P.; Vernon, S. M.; Sanfacon, M. M.; Mastrovito, A.

    The use of epitaxial multilayer dielectric mirrors (Bragg reflectors) as back-surface reflectors in thin-film GaAs solar cells on GaAs and silicon substrates is investigated. Al0.3Ga0.9As/Al0.85Ga0.15As Bragg reflectors were grown by low-pressure MOCVD on GaAs substrates and shown to exhibit near-ideal optical reflectance and structural perfection. Thin GaAs solar cells grown on Bragg reflectors showed increases in short-circuit current (0.5 to 1.0 mA/sq cm) and efficiency (0.7 percentage points) relative to cells without back reflectors. Efficiencies of 24.7 percent at one sun AM1.5 were measured for GaAs cells only 2 microns thick on Bragg reflectors. In addition to the optical enhancements, Bragg reflectors also appear to improve the defect structure of GaAs-on-Si solar cells. This approach should lead to improved efficiency for GaAs-on-Si solar cells and improved radiation resistance on GaAs cells.

  9. Investigation of the optical and electrical properties of p-type porous GaAs structure

    NASA Astrophysics Data System (ADS)

    Saghrouni, H.; Missaoui, A.; Hannachi, R.; Beji, L.

    2013-12-01

    Porous GaAs layers have been formed by electrochemical anodic etching of (1 0 0) heavily doped p-type GaAs substrate in a HF:C2H5OH solution. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-structural nature of the porous layer has been demonstrated by X-ray diffraction analysis (XRD) and confirmed by AFM. An estimation of the main size of the GaAs crystallites obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results. The porous p-GaAs samples are characterised by spectroscopic ellipsometry and modulation spectroscopy techniques. The objective of this study is to determine the porosity, refractive index, and thickness. The porosity of GaAs determined by atomic force microscopy confirmed by the value obtained from the spectroscopic ellipsometry. In fact the current-voltage I(V) characteristics of metal-semiconductor Au/p-GaAs are investigated and compared with Au/p-porous GaAs structures. From the forward bias I(V) characteristics of these devices, the main electrical parameters such as ideality factor, barrier height, and series resistance have been determined.

  10. Phononic Crystal Waveguiding in GaAs

    NASA Astrophysics Data System (ADS)

    Azodi Aval, Golnaz

    Compared to the much more common photonic crystals that are used to manipulate light, phononic crystals (PnCs) with inclusions in a lattice can be used to manipulate sound. While trying to propagate in a periodically structured media, acoustic waves may experience geometries in which propagation forward is totally forbidden. Furthermore, defects in the periodicity can be used to confine acoustic waves to follow complicated routes on a wavelength scale. Using advanced fabrication methods, we aim to implement these structures to control surface acoustic wave (SAW) propagation on the piezoelectric surface and eventually interact SAWs with quantum structures. To investigate the interaction of SAWs with periodic elastic structures, SAW interdigital transducers (IDTs) and PnC fabrication procedures were developed. GaAs is chosen as a piezoelectric substrate for SAWs propagation. Lift-off photolithography processes were used to fabricate IDTs with finger widths as low as 1.5 microns. PnCs are periodic structures of shallow air holes created in GaAs substrate by means of a wet-etching process. The PnCs are square lattices with lattice constants of 8 and 4 microns. To predict the behavior of a SAW when interacting with the PnC structures, an FDTD simulator was used to calculate the band structures and SAW wave displacement on the crystal surface. The bandgap (BG) predicted for the 8 micron crystal ranges from 180 MHz to 220 MHz. Simulations show a shift in the BG position for 4 microns crystals ranging from 391 to 439 MHz. Two main waveguide geometries were considered in this work: a simple line waveguide and a funneling entrance line waveguide. Simulations indicated an increase in acoustic power density for the funneling waveguides. Fabricated device evaluated with electrical measurements. In addition, a scanning Sagnac interferometer is used to map the energy density of the SAWs. The Sagnac interferometer is designed to measure the outward displacement of a surface due to

  11. Characterization of polyacrylamide based monolithic columns.

    PubMed

    Plieva, Fatima M; Andersson, Jonatan; Galaev, Igor Yu; Mattiasson, Bo

    2004-07-01

    Supermacroporous monolithic polyacrylamide (pAAm)-based columns have been prepared by radical cryo-copolymerization (copolymerization in the moderately frozen system) of acrylamide with functional co-monomer, allyl glycidyl ether (AGE), and cross-linker N,N'-methylene-bis-acrylamide (MBAAm) directly in glass columns (ID 10 mm). The monolithic columns have uniform supermacroporous sponge-like structure with interconnected supermacropores of pore size 5-100 microm. The monoliths can be dried and stored in the dry state. High mechanical stability of the monoliths allowed sterilization by autoclaving. Column-to-column reproducibility of pAAm-monoliths was demonstrated on 5 monolithic columns from different batches prepared under the same cryostructuration conditions. PMID:15354560

  12. Wide-bore monolithic column for electrochromatography.

    PubMed

    Yuan, Ruijuan; Ding, Guosheng; Guo, Yugao; Liu, Danning; Bao, James J

    2007-06-01

    A new wide-bore electrophoresis (WE) system adopting an inner cooling device was set up to perform electrochromatography. In this system, a quartz tube of 1.2 mm inner diameter was used as the separation channel. The Joule heat generated during electrophoresis was removed timely through the outer surface of the quartz tube and a cooling capillary inserted into the quartz tube. A proper coolant passed through the cooling capillary to further improve the cooling efficiency. In the primary research, a polyacrylamide monolithic column was successfully prepared in this quartz tube. Then it was evaluated in the electrochromatographic mode. An electric field strength as high as 625 V/cm can be applied to this system without obvious deviation of the current from the linear curve of the Ohm plot. Sample volume as high as 1 microL was injected into the WE system and reasonable efficiency was obtained for separation of the test compounds. PMID:17480039

  13. Transparent monolithic metal ion containing nanophase aerogels

    SciTech Connect

    Risen, W. M., Jr.; Hu, X.; Ji, S.; Littrell, K.

    1999-12-01

    The formation of monolithic and transparent transition metal containing aerogels has been achieved through cooperative interactions of high molecular weight functionalized carbohydrates and silica precursors, which strongly influence the kinetics of gelation. After initial gelation, subsequent modification of the ligating character of the system, coordination of the group VIII metal ions, and supercritical extraction afford the aerogels. The structures at the nanophase level have been probed by photon and electron transmission and neutron scattering techniques to help elucidate the basis for structural integrity together with the small entity sizes that permit transparency in the visible range. They also help with understanding the chemical reactivities of the metal-containing sites in these very high surface area materials. These results are discussed in connection with new reaction studies.

  14. Monolith froth reactor: Development of a novel three-phase catalytic system

    SciTech Connect

    Crynes, L.L.; Cerro, R.L.; Abraham, M.A. . Dept. of Chemical Engineering)

    1995-02-01

    The monolith froth reactor, involving two-phase flow and a monolith catalyst, is developed. The flow within monolith channels, consisting of trains of gas bubbles and liquid slugs, is produced by forming a two-phase froth in a chamber immediately below the bottom of the monolith. The froth then flows upward into the monolith channels through pressure forces, which differs from previous methods since it may be carried out for a commercial-scale reactor. Because the liquid film which develops between the gas phase and the surface of the catalyst is extremely thin, two-phase flow within a monolith can provide reaction rates which are near their intrinsic values. Catalytic oxidation of aqueous phenol over copper oxide supported on [gamma]-Al[sub 2]O[sub 3] is used as a model reaction for investigating reactor performance. Generation of a froth is confirmed by visual inspection; the average bubble size is approximately that predicted by a force balance. The effect of externally controllable process variables (liquid and gas flow rates, temperature, and pressure) on the rate of phenol oxidation was investigated. Reaction rate increases with temperature or pressure increase and decreases with gas flow rate increase, achieving a maximum with respect to liquid flow rate. The activation energy calculated from the apparent reaction rate measured in the monolith froth reactor is similar to that of intrinsic value, suggesting minimal mass-transfer limitations.

  15. Clickable Periodic Mesoporous Organosilica Monolith for Highly Efficient Capillary Chromatographic Separation.

    PubMed

    Wu, Ci; Liang, Yu; Yang, Kaiguang; Min, Yi; Liang, Zhen; Zhang, Lihua; Zhang, Yukui

    2016-02-01

    A novel clickable periodic mesoporous organosilica monolith with the surface area up to 1707 m(2) g(-1) was in situ synthesized in the capillary by the one-step condensation of the organobridged-bonded alkoxysilane precursor bis(triethoxysilyl)ethylene. With Si-C bonds in the skeleton, the monolith possesses excellent chemical and mechanical stability. With vinyl groups highly loaded and homogeneously distributed throughout the structure, the monolith can be readily functionalized with functional groups by effective thiol-ene "click" chemistry reaction. Herein, with "click" modification of C18, the obtained monolith was successfully applied for capillary liquid chromatographic separation of small molecules and proteins. The column efficiency could reach 148,000 N/m, higher than most reported hybrid monoliths. Moreover, intact proteins could be separated well with good reproducibility, even after the monolithic column was exposed by basic mobile phase (pH 10.0) overnight, demonstrating the great promising of such monolith for capillary chromatographic separation. PMID:26751092

  16. Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Qian, Yun-Sheng; Zhang, Yi-Jun; Chang, Ben-Kang

    2012-03-01

    Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

  17. Counterflow isotachophoresis in a monolithic column.

    PubMed

    Liu, Bingwen; Cong, Yongzheng; Ivory, Cornelius F

    2014-09-01

    This study describes stationary counterflow isotachophoresis (ITP) in a poly(acrylamide-co-N,N'-methylenebisacrylamide) monolithic column as a means for improving ITP processing capacity and reducing dispersion. The flow profile in the monolith was predicted using COMSOL's Brinkman Equation application mode, which revealed that the flow profile was mainly determined by monolith permeability. As monolith permeability decreases, the flow profile changes from a parabolic shape to a plug shape. An experimental monolithic column was prepared in a fused-silica capillary using an ultraviolet-initiated polymerization method. A monolithic column made from 8% (wt.) monomer was chosen for the stationary counterflow ITP experiments. Counterflow ITP in the monolithic column showed undistorted analyte zones with significantly reduced dispersion compared to the severe dispersion observed in an open capillary. Particularly, for r-phycoerythrin focused by counterflow ITP, its zone width in the monolithic column was only one-third that observed in an open capillary. These experiments demonstrate that stationary counterflow ITP in monoliths can be a robust and practical electrofocusing method. PMID:24935025

  18. Effects of ultrathin oxides in conducting MIS structures on GaAs

    NASA Technical Reports Server (NTRS)

    Childs, R. B.; Ruths, J. M.; Sullivan, T. E.; Fonash, S. J.

    1978-01-01

    Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

  19. Fracture Strength of Aged Monolithic and Bilayer Zirconia-Based Crowns.

    PubMed

    Lameira, Deborah Pacheco; Buarque e Silva, Wilkens Aurélio; Andrade e Silva, Frederico; De Souza, Grace M

    2015-01-01

    The purpose of this study was to evaluate the effect of design and surface finishing on fracture strength of yttria-tetragonal zirconia polycrystal (Y-TZP) crowns in monolithic (1.5 mm thickness) and bilayer (0.8 mm zirconia coping and 0.7 mm porcelain veneer) configuration after artificial aging. Bovine incisors received crown preparation and Y-TZP crowns were manufactured using CAD/CAM technique, according to the following groups (n = 10): Polished monolithic zirconia crowns (PM); Glazed monolithic zirconia crowns (GM); Bi-layer crowns (BL). Crowns were cemented with resin cement, submitted to artificial aging in a chewing simulator (2.5 million cycles/80 N/artificial saliva/37 °C), and tested for fracture strength. Two remaining crowns referring to PM and GM groups were submitted to a chemical composition analysis to measure the level of yttrium after aging. One-way ANOVA and Tukey's test (P = .05) indicated that monolithic zirconia crowns presented similar fracture strength (PM = 3476.2 N ± 791.7; GM = 3561.5 N ± 991.6), which was higher than bilayer crowns (2060.4 N ± 810.6). There was no difference in the yttrium content among the three surfaces evaluated in the monolithic crowns. Thus, monolithic zirconia crowns present higher fracture strength than bilayer veneered zirconia after artificial aging and surface finishing does not affect their fracture strength. PMID:26576423

  20. One-pot synthesis of a new high vinyl content hybrid silica monolith dedicated to nanoliquid chromatography.

    PubMed

    Racha, El-Debs; Gay, Pauline; Dugas, Vincent; Demesmay, Claire

    2016-03-01

    A new vinyltrimethoxysilane-based hybrid silica monolith was developed and used as a reversed-phase capillary column. The synthesis of this rich vinyl hybrid macroporous monolith, by cocondensation of vinyltrimethoxysilane with tetramethoxysilane, was investigated using an unconventional (formamide, nitric acid) porogen/catalyst system. A macroporous hybrid silica monolith with 80% in mass of vinyltrimethoxysilane in the feeding silane solution was obtained and compared to a more conventional low vinyl content hybrid monolith with only of 20% vinyltrimethoxysilane. Monoliths were characterized by scanning electron microscopy, (29) Si nuclear magnetic resonance spectroscopy and N2 adsorption-desorption. About 80% of the vinyl precursor was incorporated in the final materials, leading to 15.9 and 61.5% of Si atoms bonded to vinyl groups for 20% vinyltrimethoxysilane and 80% vinyltrimethoxysilane, respectively. The 80% vinyltrimethoxysilane monolith presents a lower surface area than 20% vinyltrimethoxysilane (159 versus 551 m(2) /g), which is nevertheless compensated by a higher vinyl surface density. Chromatographic properties were evaluated in reversed-phase mode. Plots of ln(k) versus percentage of organic modifier were used to assess the reversed-phase mechanism. Its high content of organic groups leads to high retention properties. Column efficiencies of 170 000 plates/m were measured for this 80% vinyltrimethoxysilane hybrid silica monolith. Long capillary monolithic columns (90 cm) were successfully synthesized (N = 120 000). PMID:26719150

  1. Modified energetics and growth kinetics on H-terminated GaAs (110)

    NASA Astrophysics Data System (ADS)

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Lorbek, S.; Hlawacek, G.; Teichert, C.; Tejedor, P.

    2013-10-01

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As4, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å2 measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As4 molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  2. Modified energetics and growth kinetics on H-terminated GaAs (110)

    SciTech Connect

    Galiana, B.; Benedicto, M.; Díez-Merino, L.; Tejedor, P.; Lorbek, S.; Hlawacek, G.; Teichert, C.

    2013-10-28

    Atomic hydrogen modification of the surface energy of GaAs (110) epilayers, grown at high temperatures from molecular beams of Ga and As{sub 4}, has been investigated by friction force microscopy (FFM). The reduction of the friction force observed with longer exposures to the H beam has been correlated with the lowering of the surface energy originated by the progressive de-relaxation of the GaAs (110) surface occurring upon H chemisorption. Our results indicate that the H-terminated GaAs (110) epilayers are more stable than the As-stabilized ones, with the minimum surface energy value of 31 meV/Å{sup 2} measured for the fully hydrogenated surface. A significant reduction of the Ga diffusion length on the H-terminated surface irrespective of H coverage has been calculated from the FFM data, consistent with the layer-by-layer growth mode and the greater As incorporation coefficient determined from real-time reflection high-energy electron diffraction studies. Arsenic incorporation through direct dissociative chemisorption of single As{sub 4} molecules mediated by H on the GaAs (110) surface has been proposed as the most likely explanation for the changes in surface kinetics observed.

  3. Coupling reactions of trifluoroethyl iodide on GaAs(100)

    NASA Astrophysics Data System (ADS)

    Singh, N. K.; Kemp, N. T.; Paris, N.; Balan, V.

    2004-07-01

    We report on the reactions of 2-iodo-1,1,1-trifluoroethane (CF3CH2I) on gallium-rich GaAs(100)-(4×1), studied using the techniques of temperature programmed desorption and x-ray photoelectron spectroscopy. The study is to provide evidence for the formation of a higher fluorinated alkene, 1,1,4,4,4-pentafluoro-1-butene (CF2=CHCH2CF3) and alkane, 1,1,1,4,4,4-hexafluorobutane (CF3CH2CH2CF3) from the coupling reactions of covalently bonded surface alkyl (CF3CH2•) moieties. CF3CH2I adsorbs nondissociatively at 150 K. Thermal dissociation of this weakly chemisorbed state occurs below room temperature to form adsorbed CF3CH2• and I• species. The surface CF3CH2• species undergoes β-fluoride elimination to form gaseous CF2=CH2 and this represents the major pathway for the removal of CF3CH2• species from the surface. In competition with the β-fluoride elimination process the adsorbed CF3CH2• species also undergoes, recombination with surface iodine atoms to form recombinative molecular CF3CH2I, olefin insertion reaction with CF2=CH2 to form gaseous CF2=CHCH2CF3, and last self-coupling reaction to form CF3CH2CH2CF3. The adsorbed surface iodine atoms, formed by the dissociation of the molecularly chemisorbed CF3CH2I, and fluorine atoms formed during the β-fluoride elimination reaction, both form etch products (GaI, GaF, AsI, AsF, and As2) by their reactions with the surface layer Ga atoms, subsurface As atoms, and GaAs substrate. In this article we discuss the mechanisms by which these products form from the adsorbed CF3CH2• and I• species, and the role that the GaAs surface plays in the proposed reaction pathways. We compare the reactivity of the GaAs surface with transition metals in its ability to facilitate dehydrogenation and coupling reactions in adsorbed alkyl species. .

  4. InP and GaAs characterization with variable stoichiometry obtained by molecular spray

    NASA Technical Reports Server (NTRS)

    Massies, J.; Linh, N. T.; Olivier, J.; Faulconnier, P.; Poirier, R.

    1979-01-01

    Both InP and GaAs surfaces were studied in parallel. A molecular spray technique was used to obtain two semiconductor surfaces with different superficial compositions. The structures of these surfaces were examined by electron diffraction. Electron energy loss was measured spectroscopically in order to determine surface electrical characteristics. The results are used to support conclusions relative to the role of surface composition in establishing a Schottky barrier effect in semiconductor devices.

  5. Compact monolithic capacitive discharge unit

    DOEpatents

    Roesler, Alexander W.; Vernon, George E.; Hoke, Darren A.; De Marquis, Virginia K.; Harris, Steven M.

    2007-06-26

    A compact monolithic capacitive discharge unit (CDU) is disclosed in which a thyristor switch and a flyback charging circuit are both sandwiched about a ceramic energy storage capacitor. The result is a compact rugged assembly which provides a low-inductance current discharge path. The flyback charging circuit preferably includes a low-temperature co-fired ceramic transformer. The CDU can further include one or more ceramic substrates for enclosing the thyristor switch and for holding various passive components used in the flyback charging circuit. A load such as a detonator can also be attached directly to the CDU.

  6. Monolithic 20-GHz Transmitting Module

    NASA Technical Reports Server (NTRS)

    Kascak, T.; Kaelin, G.; Gupta, A.

    1986-01-01

    20-GHz monolithic microwave/millimeter-wave integrated circuit (MMIC) with amplification and phase-shift (time-delay) capabilities developed. Use of MMIC module technology promises to make feasible development of weight- and cost-effective phased-array antenna systems, identified as major factor in achieving minimum cost and efficient use of frequency and orbital resources of future generations of communication satellite systems. Use of MMIC transmitting modules provides for relatively simple method for phase-shift control of many separate radio-frequency (RF) signals required for phased-array antenna systems.

  7. Nanosecond monolithic CMOS readout cell

    DOEpatents

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  8. "Smart" molecularly imprinted monoliths for the selective capture and easy release of proteins.

    PubMed

    Wen, Liyin; Tan, Xinyi; Sun, Qi; Svec, Frantisek; Lv, Yongqin

    2016-08-01

    A new thermally switchable molecularly imprinted monolith for the selective capture and release of proteins has been designed. First, a generic poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith reacted with ethylenediamine followed by functionalization with 2-bromoisobutyryl bromide to introduce the initiator for atom transfer radical polymerization. Subsequently, a protein-imprinted poly(N-isopropylacrylamide) layer was grafted onto the surface of the monolithic matrix by atom transfer radical polymerization. Scanning electron microscopy and energy-dispersive X-ray spectroscopy of the cross-sections of imprinted monoliths confirmed the formation of dense poly(N-isopropylacrylamide) brushes on the pore surface. The imprinted monolith exhibited high specificity and selectivity toward its template protein myoglobin over competing proteins and a remarkably large maximum adsorption capacity of 1641 mg/g. Moreover, this "smart" imprinted monolith featured thermally responsive characteristics that enabled selective capture and easy release of proteins triggered only by change in temperature with water as the mobile phase and avoided use of stronger organic solvents or change in ionic strength and pH. PMID:27352958

  9. Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System

    NASA Astrophysics Data System (ADS)

    Takado, Norikazu; Ide, Yuichi; Asakawa, Kiyoshi

    1990-02-01

    We have developed a new fine-beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In this FIB/EB combined system, EB excited GaAs etching was successfully performed by irradiating Cl2 gas on a temperature-controlled substrate. 5KeV EB was raster-scanned in a 100pm X 20pm rectangular pattern on a GaAs surface. With special care to remove the native oxide layer, spatially selective etching was also confirmed on a cleaned GaAs surface by controlling the Cl2 pressure.

  10. Monolithically integrated absolute frequency comb laser system

    DOEpatents

    Wanke, Michael C.

    2016-07-12

    Rather than down-convert optical frequencies, a QCL laser system directly generates a THz frequency comb in a compact monolithically integrated chip that can be locked to an absolute frequency without the need of a frequency-comb synthesizer. The monolithic, absolute frequency comb can provide a THz frequency reference and tool for high-resolution broad band spectroscopy.

  11. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  12. The ZnSe(110) puzzle - Comparison with GaAs(110)

    NASA Technical Reports Server (NTRS)

    Duke, C. B.; Paton, A.; Kahn, A.; Tu, D.-W.

    1984-01-01

    The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.

  13. Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

    PubMed Central

    2010-01-01

    The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies. PMID:21076695

  14. The chemistry of O in reduction processes of the GaAs native oxides

    NASA Astrophysics Data System (ADS)

    Cuberes, M. T.; Sacedon, J. L.

    1992-05-01

    We present an X-ray photoelectron spectroscopy (XPS) study of the interfacial chemical reactions during the total reduction of a 5 Å thick GaAs native oxide layer accomplished in two separate stages. First, the As2O3 has been selectively reduced by annealing the oxidized surface at increasing temperatures. In the second stage, the reduction of the Ga oxides has been completed at room temperature by Si deposition. The total amount of O at the GaAs interface remains constant during both processes. During the As2O3 thermal reduction, the analysis of the Ga2p{3}/{2} and Ga LMM spectra shows that, depending on the annealing temperature, GaOx (x < {3}/{2}) or Ga2O3 growth occurs. The Si promoted of the Ga oxides results in the formation of Si oxides of different stoichiometry at the GaAs surface.

  15. Pulse transformer for GaAs laser

    NASA Technical Reports Server (NTRS)

    Rutz, E. M.

    1976-01-01

    High-radiance gallium arsenide (GaAs) laser operating at room temperature is utilized in optical navigation system. For efficient transformer-to-laser impedance match, laser should be connected directly to pulse transformer secondary winding.

  16. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  17. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1994-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  18. Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

    1995-01-01

    A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

  19. GaAs clean up studied with synchrotron radiation photoemission

    NASA Astrophysics Data System (ADS)

    Tallarida, Massimo; Adelmann, Christoph; Delabie, Annelies; van Elshocht, Sven; Caymax, Matty; Schmeisser, Dieter

    2012-12-01

    In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable to determine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques.

  20. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.

    PubMed

    Wood, Adam W; Collar, Kristen; Li, Jincheng; Brown, April S; Babcock, Susan E

    2016-03-18

    We have examined the morphology and composition of embedded nanowires that can be formed during molecular beam epitaxy of GaAs(1-x)Bi(x) using high angle annular dark field ('Z-contrast') imaging in an aberration-corrected scanning transmission electron microscope. Samples were grown in Ga-rich growth conditions on a stationary GaAs substrate. Ga-rich droplets are observed on the surface with lateral trails extending from the droplet in the [110] direction. Cross-sectional scanning transmission electron microscopy of the film reveals epitaxial nanowire structures of composition ∼GaAs embedded in the GaAs(1-x)Bi(x) epitaxial layers. These nanowires extend from a surface droplet to the substrate at a shallow angle of inclination (∼4°). They typically are 4 μm long and have a lens-shaped cross section with major and minor axes dimensions of 800 and 120 nm. The top surface of the nanowires exhibits a linear trace in longitudinal cross-section, across which the composition change from ∼GaAs to GaAs(1-x)Bi(x) appears abrupt. The bottom surfaces of the nanowires appear wavy and the composition change appears to be graded over ∼25 nm. The droplets have phase separated into Ga- and Bi-rich components. A qualitative model is proposed in which Bi is gettered into Ga droplets, leaving Bi depleted nanowires in the wakes of the droplets as they migrate in one direction across the surface during GaAs(1-x)Bi(x) film growth. PMID:26876494

  1. Stretchable Superhydrophobicity from Monolithic, Three-Dimensional Hierarchical Wrinkles.

    PubMed

    Lee, Won-Kyu; Jung, Woo-Bin; Nagel, Sidney R; Odom, Teri W

    2016-06-01

    We report the design of three-dimensional (3D) hierarchical wrinkle substrates that can maintain their superhydrophobicity even after being repeatedly stretched. Monolithic poly(dimethysiloxane) with multiscale features showed wetting properties characteristic of static superhydrophobicity with water contact angles (>160°) and very low contact angle hysteresis (<5°). To examine how superhydrophobicity was maintained as the substrate was stretched, we investigated the dynamic wetting behavior of bouncing and splashing upon droplet impact with the surface. On hierarchical wrinkles consisting of three different length scales, superhydrophobic bouncing was observed. The substrate remained superhydrophobic up to 100% stretching with no structural defects after 1000 cycles of stretching and releasing. Stretchable superhydrophobicity was possible because of the monolithic nature of the hierarchical wrinkles as well as partial preservation of nanoscale structures under stretching. PMID:27144774

  2. Radially polarized cylindrical vector beams from a monolithic microchip laser

    NASA Astrophysics Data System (ADS)

    Naidoo, Darryl; Fromager, Michael; Ait-Ameur, Kamel; Forbes, Andrew

    2015-11-01

    Monolithic microchip lasers consist of a thin slice of laser crystal where the cavity mirrors are deposited directly onto the end faces. While this property makes such lasers very compact and robust, it prohibits the use of intracavity laser beam shaping techniques to produce complex light fields. We overcome this limitation and demonstrate the selection of complex light fields in the form of vector-vortex beams directly from a monolithic microchip laser. We employ pump reshaping and a thermal gradient across the crystal surface to control both the intensity and polarization profile of the output mode. In particular, we show laser oscillation on a superposition of Laguerre-Gaussian modes of zero radial and nonzero azimuthal index in both the scalar and vector regimes. Such complex light fields created directly from the source could find applications in fiber injection, materials processing and in simulating quantum processes.

  3. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.

    2004-08-31

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by either fluid or gas pressure against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  4. Mobile Monolith Polymer Elements For Flow Control In Microfluidic Systems

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2006-01-24

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  5. Mobile monolithic polymer elements for flow control in microfluidic devices

    DOEpatents

    Hasselbrink, Jr., Ernest F.; Rehm, Jason E.; Shepodd, Timothy J.; Kirby, Brian J.

    2005-11-11

    A cast-in-place and lithographically shaped mobile, monolithic polymer element for fluid flow control in microfluidic devices and method of manufacture. Microfluid flow control devices, or microvalves that provide for control of fluid or ionic current flow can be made incorporating a cast-in-place, mobile monolithic polymer element, disposed within a microchannel, and driven by fluid pressure (either liquid or gas) against a retaining or sealing surface. The polymer elements are made by the application of lithographic methods to monomer mixtures formulated in such a way that the polymer will not bond to microchannel walls. The polymer elements can seal against pressures greater than 5000 psi, and have a response time on the order of milliseconds. By the use of energetic radiation it is possible to depolymerize selected regions of the polymer element to form shapes that cannot be produced by conventional lithographic patterning and would be impossible to machine.

  6. Facile preparation of organic-silica hybrid monolith for capillary hydrophilic liquid chromatography based on "thiol-ene" click chemistry.

    PubMed

    Chen, Ming-Luan; Zhang, Jun; Zhang, Zheng; Yuan, Bi-Feng; Yu, Qiong-Wei; Feng, Yu-Qi

    2013-04-01

    In this work, a one-step approach to facile preparation of organic-inorganic hybrid monoliths was successfully developed. After vinyl-end organic monomers and azobisisobutyronitrile (AIBN) were mixed with hydrolyzed tetramethoxysilane (TMOS) and 3-mercaptopropyltrimethoxysilane (MPTMS), the homogeneous mixture was introduced into a fused-silica capillary for simultaneous polycondensation and "thiol-ene" click reaction to form the organic-silica hybrid monoliths. By employing this strategy, two types of organic-silica hybrid monoliths with positively charged quaternary ammonium and amide groups were prepared, respectively. The functional groups were successfully introduced onto the monoliths during the sol-gel process with "thiol-ene" click reaction, which was demonstrated by ζ-potential assessment, energy dispersive X-ray spectroscopy (EDX), and Fourier transform infrared (FT-IR) spectroscopy. The porous structure of the prepared monolithic columns was examined by scanning electron microscopy (SEM), nitrogen adsorption-desorption measurement, and mercury intrusion porosimetry. These results indicate the prepared organic-silica hybrid monoliths possess homogeneous column bed, large specific surface area, good mechanical stability, and excellent permeability. The prepared monolithic columns were then applied for anion-exchange/hydrophilic interaction liquid chromatography. Different types of analytes, including benzoic acids, inorganic ions, nucleosides, and nucleotides, were well separated with high column efficiency around 80,000-130,000 plates/m. Taken together, we present a facile and universal strategy to prepare organic-silica hybrid monoliths with a variety of organic monomers using one-step approach. PMID:23434082

  7. Macroscopic Carbon Nanotube-based 3D Monoliths.

    PubMed

    Du, Ran; Zhao, Qiuchen; Zhang, Na; Zhang, Jin

    2015-07-15

    Carbon nanotubes (CNTs) are one of the most promising carbon allotropes with incredible diverse physicochemical properties, thereby enjoying continuous worldwide attention since their discovery about two decades ago. From the point of view of practical applications, assembling individual CNTs into macroscopic functional and high-performance materials is of paramount importance. For example, multiscaled CNT-based assemblies including 1D fibers, 2D films, and 3D monoliths have been developed. Among all of these, monolithic 3D CNT architectures with porous structures have attracted increasing interest in the last few years. In this form, theoretically all individual CNTs are well connected and fully expose their surfaces. These 3D architectures have huge specific surface areas, hierarchical pores, and interconnected conductive networks, resulting in enhanced mass/electron transport and countless accessible active sites for diverse applications (e.g. catalysis, capacitors, and sorption). More importantly, the monolithic form of 3D CNT assemblies can impart additional application potentials to materials, such as free-standing electrodes, sensors, and recyclable sorbents. However, scaling the properties of individual CNTs to 3D assemblies, improving use of the diverse, structure-dependent properties of CNTs, and increasing the performance-to-cost ratio are great unsolved challenges for their real commercialization. This review aims to provide a comprehensive introduction of this young and energetic field, i.e., CNT-based 3D monoliths, with a focus on the preparation principles, current synthetic methods, and typical applications. Opportunities and challenges in this field are also presented. PMID:25740457

  8. Covalent attachment of polymeric monolith to polyether ether ketone (PEEK) tubing.

    PubMed

    Lv, Chunguang; Heiter, Jaana; Haljasorg, Tõiv; Leito, Ivo

    2016-08-17

    A new method of reproducible preparation of vinylic polymeric monolithic columns with a key step of covalently anchoring the monolith to PEEK surface is described. In order to chemically attach the polymer monolith to the tube wall, methacrylate functional groups were introduced onto PEEK surface by a three-step procedure, including surface etching, surface reduction and surface methacryloylation. The chemical state of the modified tubing surface was characterized by attenuated total reflectance infrared (ATR-IR) spectroscopy. It was found that the etching step is the key to successfully modifying the PEEK tubing surface. Poly(styrene-co-divinylbenzene) monoliths were in situ synthesized by thermally initiated free radical copolymerization within the confines of surface-vinylized PEEK tubings of dimensions close to ones conventionally used in HPLC and UHPLC (1.6 mm internal diameter, 10.0-12.5 cm length). Adhesion test was done by measuring the operating pressure drop, which the prepared stationary phases can withstand. Good pressure resistance, up to 140 bar/10 cm (flow rate 0.5 mL min(-1), acetonitrile as a mobile phase), indicates strong bonding of monolith to the tubing wall. The monolithic material was proven to have a permeability of 1.7 × 10 (-14) m(2), applying acetonitrile-water 70:30 (v/v) as a mobile phase. The column performance was reproducible from column to column and was evaluated via the isocratic separation of a series of alkylbenzenes in the reversed-phase mode (acetonitrile-water 70:30, v/v). The numbers of plates per meter at optimal flow rate were found to be between 26 000 and 32 000 for the different analytes. PMID:27286776

  9. GaAs Semi-Insulating Layer for a GaAs Device

    NASA Technical Reports Server (NTRS)

    Sherrill, G.; Mattauch, R. J.

    1986-01-01

    Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

  10. Feasibility evaluation of the monolithic braided ablative nozzle

    NASA Astrophysics Data System (ADS)

    Director, Mark N.; McPherson, Douglass J., Sr.

    1992-02-01

    The feasibility of the monolithic braided ablative nozzle was evaluated as part of an independent research and development (IR&D) program complementary to the National Aeronautics and Space Administration/Marshall Space Flight Center (NASA/MSFC) Low-Cost, High-Reliability Case, Insulation and Nozzle for Large Solid Rocket Motors (LOCCIN) Program. The monolithic braided ablative nozzle is a new concept that utilizes a continuous, ablative, monolithic flame surface that extends from the nozzle entrance, through the throat, to the exit plane. The flame surface is fabricated using a Through-the-Thickness braided carbon-fiber preform, which is impregnated with a phenolic or phenolic-like resin. During operation, the braided-carbon fiber/resin material ablates, leaving the structural backside at temperatures which are sufficiently low to preclude the need for any additional insulative materials. The monolithic braided nozzle derives its potential for low life cycle cost through the use of automated processing, one-component fabrication, low material scrap, low process scrap, inexpensive raw materials, and simplified case attachment. It also has the potential for high reliability because its construction prevents delamination, has no nozzle bondlines or leak paths along the flame surface, is amenable to simplified analysis, and is readily inspectable. In addition, the braided construction has inherent toughness and is damage-tolerant. Two static-firing tests were conducted using subscale, 1.8 - 2.0-inch throat diameter, hardware. Tests were approximately 15 seconds in duration, using a conventional 18 percent aluminum/ammonium perchlorate propellant. The first of these tests evaluated the braided ablative as an integral backside insulator and exit cone; the second test evaluated the monolithic braided ablative as an integral entrance/throat/exit cone nozzle. Both tests met their objectives. Radial ablation rates at the throat were as predicted, approximately 0.017 in

  11. Measurement of electron beam polarization produced by photoemission from bulk GaAs using twisted light

    NASA Astrophysics Data System (ADS)

    Clayburn, Nathan; Dreiling, Joan; McCarter, James; Ryan, Dominic; Poelker, Matt; Gay, Timothy

    2012-06-01

    GaAs photocathodes produce spin polarized electron beams when illuminated with circularly polarized light with photon energy approximately equal to the bandgap energy [1, 2]. A typical polarization value obtained with bulk GaAs and conventional circularly polarized light is 35%. This study investigated the spin polarization of electron beams emitted from GaAs illuminated with ``twisted light,'' an expression that describes a beam of light having orbital angular momentum (OAM). In the experiment, 790nm laser light was focused to a near diffraction-limited spot size on the surface of the GaAs photocathode to determine if OAM might couple to valence band electron spin mediated by the GaAs lattice. Our polarization measurements using a compact retarding-field micro-Mott polarimeter [3] have established an upper bound on the polarization of the emitted electron beam of 2.5%. [4pt] [1] D.T. Pierce, F. Meier, P. Zurcher, Appl. Phys. Lett. 26 670 (1975).[0pt] [2] C.K. Sinclair, et al., PRSTAB 10 023501 (2007).[0pt] [3] J.L. McCarter, M.L. Stutzman, K.W. Trantham, T.G. Anderson, A.M. Cook, and T.J. Gay Nucl. Instrum. and Meth. A (2010).

  12. High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures.

    PubMed

    Lee, Sung-Min; Kwong, Anthony; Jung, Daehwan; Faucher, Joseph; Biswas, Roshni; Shen, Lang; Kang, Dongseok; Lee, Minjoo Larry; Yoon, Jongseung

    2015-10-27

    Due to their favorable materials properties including direct bandgap and high electron mobilities, epitaxially grown III-V compound semiconductors such as gallium arsenide (GaAs) provide unmatched performance over silicon in solar energy harvesting. Nonetheless, their large-scale deployment in terrestrial photovoltaics remains challenging mainly due to the high cost of growing device quality epitaxial materials. In this regard, reducing the thickness of constituent active materials under appropriate light management schemes is a conceptually viable option to lower the cost of GaAs solar cells. Here, we present a type of high efficiency, ultrathin GaAs solar cell that incorporates bifacial photon management enabled by techniques of transfer printing to maximize the absorption and photovoltaic performance without compromising the optimized electronic configuration of planar devices. Nanoimprint lithography and dry etching of titanium dioxide (TiO2) deposited directly on the window layer of GaAs solar cells formed hexagonal arrays of nanoscale posts that serve as lossless photonic nanostructures for antireflection, diffraction, and light trapping in conjunction with a co-integrated rear-surface reflector. Systematic studies on optical and electrical properties and photovoltaic performance in experiments, as well as numerical modeling, quantitatively describe the optimal design rules for ultrathin, nanostructured GaAs solar cells and their integrated modules. PMID:26376087

  13. GaAs Refractive Index Dependence On Carrier Density and Optimizing Terahertz Devices

    NASA Astrophysics Data System (ADS)

    Kim, Christopher; Wu, Dong Ho; Graber, Benjamin

    GaAs is used for various applications, including high speed transistors, high-efficiency photovoltaic cells, electro-optics and terahertz (THz) emitters and detectors. To date, information on the refractive index of GaAs is available only over a limited wave spectrum of 0.2-17um, where the refractive index varies from 1.3 to 5.0. As detailed information on the refractive index of GaAs at THz frequencies is not available or inadequate for our effort to develop an improved GaAs-based THz emitter, we experimentally investigated the behavior of the refractive index of GaAs for different charge carrier densities, especially with or without the presence of surface plasma. Using a Time Domain THz Spectrometer, which is capable of measuring THz pulses containing a wave spectrum over 100-3000um with a time accuracy better than 6 femtoseconds, we measured the delay of THz pulses traversing through a GaAs substrate of known thickness while modulating the charge carrier concentration. From the experimental data we estimated the refractive index for THz frequencies to vary from 3.5 to 3.8 for different charge carrier concentrations. We will discuss details of our experiments and implications of our experimental results, especially for our GaAs-based THz devices.

  14. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    SciTech Connect

    Guo, W. Pena, V.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Date, L.; Bao, X.; Sanchez, E.; Vandervorst, W.

    2014-08-11

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

  15. Selective-area growth of heavily n-doped GaAs nanostubs on Si(001) by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Chang, Yoon Jung; Simmonds, Paul J.; Beekley, Brett; Goorsky, Mark S.; Woo, Jason C. S.

    2016-04-01

    Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth (SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growth parameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAs growth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grown GaAs nanostubs by fabricating heterogeneous p+-Si/n+-GaAs p-n diodes.

  16. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

    NASA Astrophysics Data System (ADS)

    Guo, W.; Date, L.; Pena, V.; Bao, X.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Sanchez, E.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Vandervorst, W.

    2014-08-01

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

  17. Calibration Designs for Non-Monolithic Wind Tunnel Force Balances

    NASA Technical Reports Server (NTRS)

    Johnson, Thomas H.; Parker, Peter A.; Landman, Drew

    2010-01-01

    This research paper investigates current experimental designs and regression models for calibrating internal wind tunnel force balances of non-monolithic design. Such calibration methods are necessary for this class of balance because it has an electrical response that is dependent upon the sign of the applied forces and moments. This dependency gives rise to discontinuities in the response surfaces that are not easily modeled using traditional response surface methodologies. An analysis of current recommended calibration models is shown to lead to correlated response model terms. Alternative modeling methods are explored which feature orthogonal or near-orthogonal terms.

  18. Fabrication of p(+)-n junction GaAs solar cells by a novel method

    NASA Technical Reports Server (NTRS)

    Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

    1984-01-01

    A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

  19. CBr4-based in-situ etching of GaAs, assisted with TMAl and TMGa

    NASA Astrophysics Data System (ADS)

    Della Casa, Pietro; Maaßdorf, Andre; Zeimer, Ute; Weyers, Markus

    2016-01-01

    In-situ etching of GaAs with CBr4 in metalorganic vapor phase epitaxy has been investigated at different temperatures using in-situ reflectivity to measure the etch rates. Deep (150 nm) etching of epitaxially-grown GaAs leads to the development of etch pits on the surface, corresponding to the emerging points of threading dislocations. Addition of trimethylgallium (TMGa) leads to a linear superposition of growth and etching. Trimethylaluminium (TMAl) added in moderate quantity enhances the etch rate and inhibits the development of etch pits. A model description for the enhanced etch rate is presented.

  20. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    SciTech Connect

    Nemcsics, A.

    2005-11-15

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed.

  1. Monolithic solid electrolyte oxygen pump

    DOEpatents

    Fee, Darrell C.; Poeppel, Roger B.; Easler, Timothy E.; Dees, Dennis W.

    1989-01-01

    A multi-layer oxygen pump having a one-piece, monolithic ceramic structure affords high oxygen production per unit weight and volume and is thus particularly adapted for use as a portable oxygen supply. The oxygen pump is comprised of a large number of small cells on the order of 1-2 millimeters in diameter which form the walls of the pump and which are comprised of thin, i.e., 25-50 micrometers, ceramic layers of cell components. The cell components include an air electrode, an oxygen electrode, an electrolyte and interconnection materials. The cell walls form the passages for input air and for exhausting the oxygen which is transferred from a relatively dilute gaseous mixture to a higher concentration by applying a DC voltage across the electrodes so as to ionize the oxygen at the air electrode, whereupon the ionized oxygen travels through the electrolyte and is converted to oxygen gas at the oxygen electrode.

  2. Step bunch assisted two dimensional ordering of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots on vicinal GaAs(001) surfaces

    SciTech Connect

    Hanke, M.; Wang, Zh. M.; Mazur, Yu. I.; Lee, J. H.; Salamo, G. J.; Schmidbauer, M.

    2008-01-21

    We have investigated the self-organized, step bunch assisted formation of In{sub 0.19}Ga{sub 0.81}As/GaAs quantum dots in vertical superlattices consisting of one, four, eight, and ten periods. Samples were grown by molecular beam epitaxy on vicinal 2 deg. A and 2 deg. B GaAs(001) substrates. Those with miscut along the [110] (2 deg. B) exclusively show step bunches of an aspect ratio larger than 10 but without the formation of quantum dots. This highly linear pattern is improved during subsequent periods as proved by high resolution x-ray diffraction and grazing incidence diffraction. On the other hand, a miscut along the [110] (2 deg. A) initially causes a crosslike pattern of step bunches, which finally becomes a two-dimensional arrangement of individual quantum dots.

  3. Monolithic cells for solar fuels.

    PubMed

    Rongé, Jan; Bosserez, Tom; Martel, David; Nervi, Carlo; Boarino, Luca; Taulelle, Francis; Decher, Gero; Bordiga, Silvia; Martens, Johan A

    2014-12-01

    Hybrid energy generation models based on a variety of alternative energy supply technologies are considered the best way to cope with the depletion of fossil energy resources and to limit global warming. One of the currently missing technologies is the mimic of natural photosynthesis to convert carbon dioxide and water into chemical fuel using sunlight. This idea has been around for decades, but artificial photosynthesis of organic molecules is still far away from providing real-world solutions. The scientific challenge is to perform in an efficient way the multi-electron transfer reactions of water oxidation and carbon dioxide reduction using holes and single electrons generated in an illuminated semiconductor. In this tutorial review the design of photoelectrochemical (PEC) cells that combine solar water oxidation and CO2 reduction is discussed. In such PEC cells simultaneous transport and efficient use of light, electrons, protons and molecules has to be managed. It is explained how efficiency can be gained by compartmentalisation of the water oxidation and CO2 reduction processes by proton exchange membranes, and monolithic concepts of artificial leaves and solar membranes are presented. Besides transferring protons from the anode to the cathode compartment the membrane serves as a molecular barrier material to prevent cross-over of oxygen and fuel molecules. Innovative nano-organized multimaterials will be needed to realise practical artificial photosynthesis devices. This review provides an overview of synthesis techniques which could be used to realise monolithic multifunctional membrane-electrode assemblies, such as Layer-by-Layer (LbL) deposition, Atomic Layer Deposition (ALD), and porous silicon (porSi) engineering. Advances in modelling approaches, electrochemical techniques and in situ spectroscopies to characterise overall PEC cell performance are discussed. PMID:24526085

  4. Growth of GaAs crystals from the melt in a partially confined configuration

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C.; Lagowski, Jacek

    1988-01-01

    The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

  5. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    NASA Astrophysics Data System (ADS)

    Muhammad, R.; Othaman, Z.; Wahab, Y.; Ibrahim, Z.; Sakrani, S.

    2016-04-01

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  6. GaInP2/GaAs tandem cells for space applications

    NASA Technical Reports Server (NTRS)

    Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Friedman, D. J.

    1991-01-01

    The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

  7. Discrete GaAs microwave devices for satellite TV converter front ends

    NASA Astrophysics Data System (ADS)

    Pettenpaul, E.; Langer, E.; Huber, J.; Mampe, H.; Zimmermann, W.

    GaAs microwave devices for receiver front ends, especially for the home reception of satellite broadcasts in the region of 12 GHz, are reported. The basic devices used are micron and submicron single- and dual-gate MESFETs as amplifiers, oscillators, mixers and lumped elements for impedance-matching circuitry and filters. The results of chip measurements and modeling are reported. In particular, noise figures below 2 dB have been realized for the halfmicron MESFET at 12 GHz, below 2.5 dB for a single-stage monolithic broadband amplifier at 1.5 GHz, and 2.7 dB for a complete hybrid ECS down-converter module. The process technology includes direct selective ion implantation, submicron gate definition and airbridge crossovers.

  8. Ka-band IQ vector modulator employing GaAs HBTs

    NASA Astrophysics Data System (ADS)

    Yuxiong, Cao; Danyu, Wu; Gaopeng, Chen; Zhi, Jin; Xinyu, Liu

    2011-06-01

    The importance of high-performance, low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing. The design and performance of a Ka-band balanced in-phase and quadrature-phase (I-Q) type vector modulator, using GaAs heterojunction bipolar transistors (HBTs) as switching elements, are presented. The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations. Measurements of the monolithic microwave integrated circuit (MMIC) chip with a size of 1.89 × 2.26 mm2 demonstrate an amplitude error below 1.5 dB and the phase error within 3° between 26 and 40 GHz except for a singular point at 35.6 GHz. The results show that the technique is suitable for millimeter-wave digital communications.

  9. Preparing Silica Aerogel Monoliths via a Rapid Supercritical Extraction Method

    PubMed Central

    Gorka, Caroline A.

    2014-01-01

    A procedure for the fabrication of monolithic silica aerogels in eight hours or less via a rapid supercritical extraction process is described. The procedure requires 15-20 min of preparation time, during which a liquid precursor mixture is prepared and poured into wells of a metal mold that is placed between the platens of a hydraulic hot press, followed by several hours of processing within the hot press. The precursor solution consists of a 1.0:12.0:3.6:3.5 x 10-3 molar ratio of tetramethylorthosilicate (TMOS):methanol:water:ammonia. In each well of the mold, a porous silica sol-gel matrix forms. As the temperature of the mold and its contents is increased, the pressure within the mold rises. After the temperature/pressure conditions surpass the supercritical point for the solvent within the pores of the matrix (in this case, a methanol/water mixture), the supercritical fluid is released, and monolithic aerogel remains within the wells of the mold. With the mold used in this procedure, cylindrical monoliths of 2.2 cm diameter and 1.9 cm height are produced. Aerogels formed by this rapid method have comparable properties (low bulk and skeletal density, high surface area, mesoporous morphology) to those prepared by other methods that involve either additional reaction steps or solvent extractions (lengthier processes that generate more chemical waste).The rapid supercritical extraction method can also be applied to the fabrication of aerogels based on other precursor recipes. PMID:24637334

  10. Preparing silica aerogel monoliths via a rapid supercritical extraction method.

    PubMed

    Carroll, Mary K; Anderson, Ann M; Gorka, Caroline A

    2014-01-01

    A procedure for the fabrication of monolithic silica aerogels in eight hours or less via a rapid supercritical extraction process is described. The procedure requires 15-20 min of preparation time, during which a liquid precursor mixture is prepared and poured into wells of a metal mold that is placed between the platens of a hydraulic hot press, followed by several hours of processing within the hot press. The precursor solution consists of a 1.0:12.0:3.6:3.5 x 10(-3) molar ratio of tetramethylorthosilicate (TMOS):methanol:water:ammonia. In each well of the mold, a porous silica sol-gel matrix forms. As the temperature of the mold and its contents is increased, the pressure within the mold rises. After the temperature/pressure conditions surpass the supercritical point for the solvent within the pores of the matrix (in this case, a methanol/water mixture), the supercritical fluid is released, and monolithic aerogel remains within the wells of the mold. With the mold used in this procedure, cylindrical monoliths of 2.2 cm diameter and 1.9 cm height are produced. Aerogels formed by this rapid method have comparable properties (low bulk and skeletal density, high surface area, mesoporous morphology) to those prepared by other methods that involve either additional reaction steps or solvent extractions (lengthier processes that generate more chemical waste).The rapid supercritical extraction method can also be applied to the fabrication of aerogels based on other precursor recipes. PMID:24637334

  11. Thermal oxidation of In/sub 2/S/sub 3//GaAs structures

    SciTech Connect

    Mittova, Ya.; Pukhova, V.V.

    1986-11-01

    The purpose of this work is to investigate the effect of indium sulfide, deposited on the surface of GaAs, on the process of oxidation of gallium arsenide, as well as on the composition and some properties of the oxide layers formed.

  12. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  13. Layer-by-Layer Assembly of Metal-Organic Frameworks in Macroporous Polymer Monolith and Their Use for Enzyme Immobilization.

    PubMed

    Wen, Liyin; Gao, Aicong; Cao, Yao; Svec, Frantisek; Tan, Tianwei; Lv, Yongqin

    2016-03-01

    New monolithic materials comprising zeolitic imidazolate framework (ZIF-8) located on the pore surface of poly(glycidyl methacrylate-co-ethylene dimethacrylate) monolith previously functionalized with N-(3-aminopropyl)-imidazole have been prepared via a layer-by-layer self-assembly strategy. These new ZIF-8@monolith hybrids are used as solid-phase carriers for enzyme immobilization. Their performance is demonstrated with immobilization of a model proteolytic enzyme trypsin. The best of the conjugates enable very efficient digestion of proteins that can be achieved in mere 43 s. PMID:26806691

  14. Ultra-Thin-Film GaAs Solar Cells

    NASA Technical Reports Server (NTRS)

    Wang, K. L.; Shin, B. K.; Yeh, Y. C. M.; Stirn, R. J.

    1982-01-01

    Process based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.

  15. Activated carbon monoliths for methane storage

    NASA Astrophysics Data System (ADS)

    Chada, Nagaraju; Romanos, Jimmy; Hilton, Ramsey; Suppes, Galen; Burress, Jacob; Pfeifer, Peter

    2012-02-01

    The use of adsorbent storage media for natural gas (methane) vehicles allows for the use of non-cylindrical tanks due to the decreased pressure at which the natural gas is stored. The use of carbon powder as a storage material allows for a high mass of methane stored for mass of sample, but at the cost of the tank volume. Densified carbon monoliths, however, allow for the mass of methane for volume of tank to be optimized. In this work, different activated carbon monoliths have been produced using a polymeric binder, with various synthesis parameters. The methane storage was studied using a home-built, dosing-type instrument. A monolith with optimal parameters has been fabricated. The gravimetric excess adsorption for the optimized monolith was found to be 161 g methane for kg carbon.

  16. Monolithically integrated distributed bragg reflector laser

    SciTech Connect

    Furuya, K.

    1984-08-07

    In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heterostructure medium. Bragg reflectors are properly disposed within the waveguide.

  17. Monolithic solid-state lasers for spaceflight

    NASA Astrophysics Data System (ADS)

    Krainak, Michael A.; Yu, Anthony W.; Stephen, Mark A.; Merritt, Scott; Glebov, Leonid; Glebova, Larissa; Ryasnyanskiy, Aleksandr; Smirnov, Vadim; Mu, Xiaodong; Meissner, Stephanie; Meissner, Helmuth

    2015-02-01

    A new solution for building high power, solid state lasers for space flight is to fabricate the whole laser resonator in a single (monolithic) structure or alternatively to build a contiguous diffusion bonded or welded structure. Monolithic lasers provide numerous advantages for space flight solid-state lasers by minimizing misalignment concerns. The closed cavity is immune to contamination. The number of components is minimized thus increasing reliability. Bragg mirrors serve as the high reflector and output coupler thus minimizing optical coatings and coating damage. The Bragg mirrors also provide spectral and spatial mode selection for high fidelity. The monolithic structure allows short cavities resulting in short pulses. Passive saturable absorber Q-switches provide a soft aperture for spatial mode filtering and improved pointing stability. We will review our recent commercial and in-house developments toward fully monolithic solid-state lasers.

  18. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    NASA Astrophysics Data System (ADS)

    Li, Yanbo; Zhang, Yang; Zhang, Yuwei; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2012-06-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (GaSb) defect.

  19. Phased-array antenna control by a monolithic photonic integrated circuit, COMPASS

    SciTech Connect

    Kravitz, S.H.; Hietala, V.M.; Vawter, G.A.; Meyer, W.J.

    1991-01-01

    Phased-array antenna systems are well known for rapid beam steering and their ability to bring high power to the target. Such systems are also quite complex and heavy, which have limited their usefulness. The issues of weight, size, power use, and complexity have been addressed through a system named COMPASS (Coherent Optical Monolithic Phased Array Steering System). All phased-array antenna systems need: (1) small size; (2) low power use; (3) high-speed beam steering; and (4) digitally-controlled phase shifting. COMPASS meets these basic requirements, and provides some very desirable additional features. These are: (1) phase control separate from the transmit/receive module; (2) simple expansion to large arrays; (3) fiber optic interconnect for reduced sensitivity to EMI; (4) an intrinsically radiation-hard GaAs chip; and (5) optical power provided by a commercially available continuous wave (CW) laser. 4 refs., 8 figs.

  20. Monolithic Active-Pixel Infrared Sensors

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R.; Cunningham, Thomas J.; Krabach, Timothy N.; Staller, Craig O.

    1995-01-01

    Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

  1. Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

    DOEpatents

    Wang, Daojing; Yang, Peidong; Kim, Woong; Fan, Rong

    2011-09-20

    Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

  2. Monolithic ceramic capacitors for high reliability applications

    NASA Technical Reports Server (NTRS)

    Thornley, E. B.

    1981-01-01

    Monolithic multi-layer ceramic dielectric capacitors are widely used in high reliability applications in spacecraft, launch vehicles, and military equipment. Their relatively low cost, wide range of values, and package styles are attractive features that result in high usage in electronic circuitry in these applications. Design and construction of monolithic ceramic dielectric capacitors, defects that can lead to failure, and methods for defect detection that are being incorporated in military specifications are discussed.

  3. Crystal growth of device quality GaAs in space

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Lagowski, J.

    1979-01-01

    The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

  4. Photoluminescence of Mn+ doped GaAs

    NASA Astrophysics Data System (ADS)

    Zhou, Huiying; Qu, Shengchun; Liao, Shuzhi; Zhang, Fasheng; Liu, Junpeng; Wang, Zhanguo

    2010-10-01

    Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

  5. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    The handbook discusses the history of GaAs solar cell development, presents equations useful for working with GaAs solar cells, describes commonly used instrumentation techniques for assessing radiation effects in solar cells and fundamental processes occurring in solar cells exposed to ionizing radiation, and explains why radiation decreases the electrical performance of solar cells. Three basic elements required to perform solar array degradation calculations: degradation data for GaAs solar cells after irradiation with 1 MeV electrons at normal incidence; relative damage coefficients for omnidirectional electron and proton exposure; and the definition of the space radiation environment for the orbit of interest, are developed and used to perform a solar array degradation calculation.

  6. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

    SciTech Connect

    Dementyev, P. A.; Dunaevskii, M. S. Samsonenko, Yu. B.; Cirlin, G. E.; Titkov, A. N.

    2010-05-15

    A technique for measurement of longitudinal current-voltage characteristics of semiconductor nanowhiskers remaining in contact with the growth surface is suggested. The technique is based on setting up a stable conductive contact between the top of a nanowhisker and the probe of an atomic-force microscope. It is demonstrated that, as the force pressing the probe against the top of the nanowhisker increases, the natural oxide layer covering the top is punctured and a direct contact between the probe and the nanowhisker body is established. In order to prevent nanowhiskers from bending and, ultimately, breaking, they need to be somehow fixed in space. In this study, GaAs nanowhiskers were kept fixed by partially overgrowing them with a GaAs layer. To isolate nanowhiskers from the matrix they were embedded in, they were coated by a nanometer layer of AlGaAs. Doping of GaAs nanowhiskers with silicon was investigated. The shape of the current-voltage characteristics obtained indicates that introduction of silicon leads to p-type conduction in nanowhiskers, in contrast to n-type conduction in bulk GaAs crystals grown by molecular-beam epitaxy. This difference is attributed to the fact that the vapor-liquid-solid process used to obtain nanowhiskers includes a final stage of liquid-phase epitaxy, a characteristic of the latter being p-type conduction obtained in bulk GaAs(Si) crystals.

  7. Monolithic ceramic analysis using the SCARE program

    NASA Technical Reports Server (NTRS)

    Manderscheid, Jane M.

    1988-01-01

    The Structural Ceramics Analysis and Reliability Evaluation (SCARE) computer program calculates the fast fracture reliability of monolithic ceramic components. The code is a post-processor to the MSC/NASTRAN general purpose finite element program. The SCARE program automatically accepts the MSC/NASTRAN output necessary to compute reliability. This includes element stresses, temperatures, volumes, and areas. The SCARE program computes two-parameter Weibull strength distributions from input fracture data for both volume and surface flaws. The distributions can then be used to calculate the reliability of geometrically complex components subjected to multiaxial stress states. Several fracture criteria and flaw types are available for selection by the user, including out-of-plane crack extension theories. The theoretical basis for the reliability calculations was proposed by Batdorf. These models combine linear elastic fracture mechanics (LEFM) with Weibull statistics to provide a mechanistic failure criterion. Other fracture theories included in SCARE are the normal stress averaging technique and the principle of independent action. The objective of this presentation is to summarize these theories, including their limitations and advantages, and to provide a general description of the SCARE program, along with example problems.

  8. A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

    NASA Technical Reports Server (NTRS)

    Bruston, J.; Maestrini, A.; Pukala, D.; Martin, S.; Nakamura, B.; Mehdi, I.

    2001-01-01

    Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

  9. Preparation of polyhedral oligomeric silsesquioxane-based hybrid monolith by ring-opening polymerization and post-functionalization via thiol-ene click reaction.

    PubMed

    Liu, Zhongshan; Ou, Junjie; Lin, Hui; Wang, Hongwei; Dong, Jing; Zou, Hanfa

    2014-05-16

    A polyhedral oligomeric silsesquioxane (POSS) hybrid monolith was simply prepared by using octaglycidyldimethylsilyl POSS (POSS-epoxy) and cystamine dihydrochloride as monomers via ring-opening polymerization. The effects of composition of prepolymerization solution and polycondensation temperature on the morphology and permeability of monolithic column were investigated in detail. The obtained POSS hybrid monolithic column showed 3D skeleton morphology and exhibited high column efficiency of ∼71,000 plates per meter in reversed-phase mechanism. Owing to this POSS hybrid monolith essentially possessing a great number of disulfide bonds, the monolith surface would expose thiol groups after reduction with dithiothreitol (DTT), which supplied active sites to functionalize with various alkene monomers via thiol-ene click reaction. The results indicated that the reduction with DTT could not destroy the 3D skeleton of hybrid monolith. Both stearyl methylacrylate (SMA) and benzyl methacrylate (BMA) were selected to functionalize the hybrid monolithic columns for reversed-phase liquid chromatography (RPLC), while [2-(methacryloyloxy)ethyl]-dimethyl-(3-sulfopropyl)-ammonium hydroxide (MSA) was used to modify the hybrid monolithic column in hydrophilic interaction chromatography (HILIC). These modified hybrid monolithic columns could be successfully applied for separation of small molecules with high efficiency. It is demonstrated that thiol-ene click reaction supplies a facile way to introduce various functional groups to the hybrid monolith possessing thiol groups. Furthermore, due to good permeability of the resulting hybrid monoliths, we also prepared long hybrid monolithic columns in narrow-bore capillaries. The highest column efficiency reached to ∼70,000 plates using a 1-m-long column of 75μm i.d. with a peak capacity of 147 for isocratic chromatography, indicating potential application in separation and analysis of complex biosamples. PMID:24725471

  10. Step-step interactions on GaAs (110) nanopatterns

    SciTech Connect

    Galiana, B.; Benedicto, M.; Tejedor, P.

    2013-01-14

    The step-step interactions on vicinal GaAs (110) surface patterns have been extracted from the quantitative analysis of the terrace width distribution (TWD). We have specifically studied the interactions in near-equilibrium faceting and kinetics-driven step bunching and meandering formed by spontaneous self-organization or through the modification of GaAs growth kinetics by atomic hydrogen. We show that the experimental TWDs determined from atomic force microscopy measurements can be accurately described by a weighed sum of a generalized Wigner distribution and several Gaussians. The results of our calculations indicate that straight facets are formed during high temperature homoepitaxy due to attractive interactions between [110] steps. At low temperatures, steady state attractive interactions in [110] step bunches are preceded by a transition regime dominated by entropic and energetic repulsions between meandering [11n]-type steps (n {>=} 2), whose population density exceeds that of the [110] bunched steps. In addition, it has been found that atomic H reduces the attractive interactions between [110] bunched steps and enhances entropic and dipole-induced energetic repulsions between H-terminated [11n] steps through the inhibition of As-As bond formation at step edges. Our analysis has evidenced a correlation between the value of the adjustable parameter that accounts in our model for the specific weight of the secondary peaks in the TWD ({beta}) and the extent of transverse meandering on the vicinal surface.

  11. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  12. Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

    NASA Technical Reports Server (NTRS)

    Castle, J. G.

    1975-01-01

    An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

  13. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    PubMed

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells. PMID:26502060

  14. β-Cyclodextrin functionalized polystyrene porous monoliths for separating phenol from wastewater.

    PubMed

    Han, Jiaxi; Xie, Kaijun; Du, Zhongjie; Zou, Wei; Zhang, Chen

    2015-04-20

    A β-cyclodextrin (β-CD) functionalized polystyrene porous monolith was prepared by the following procedure: First, β-CD was modified with allyl bromide leading to allyl-β-cyclodextrin (allyl-β-CD); then a concentrated emulsion was prepared using a mixture of allyl-β-CD, styrene, and divinyl benzene as the continuous phase and water as the dispersed phase. In the third step, a β-cyclodextrin (β-CD) functionalized polystyrene porous monolith was obtained by copolymerization of allyl-β-CD and styrene followed by removal of the water phase. Since the allyl-β-CD contained both hydrophilic and hydrophobic groups, it tended to move towards the water/oil interface. As a result, the internal surfaces of the porous monolith were enriched with β-CD. This enrichment was indicated by X-ray photoelectron spectroscopy characterization. The high content of β-CD and the high specific surface area of the porous monolith both contributed to a high adsorption capacity. For example, the maximum adsorption of phenol was 5.74 mg/g. Importantly, the porous monolith could be easily regenerated and recycled through desorption with ethanol and it was found that the adsorption properties remained stable for at least five adsorption/desorption cycles. PMID:25662691

  15. Interactions of bupivacaine with a molecularly imprinted polymer in a monolithic format studied by NMR.

    PubMed

    Courtois, Julien; Fischer, Gerd; Schauff, Siri; Albert, Klaus; Irgum, Knut

    2006-01-15

    A trimethylolpropane trimethacrylate-based monolith of dimensions carefully chosen to fit exactly in a standard 4-mm solid-state CP/MAS NMR rotor was photopolymerized and subsequently molecularly imprinted with bupivacaine using a grafting protocol with methacrylic acid and ethylene dimethacrylate as monomers. As no crushing or grinding of the monolith was necessary, additional unspecific surface area was not created. This procedure ascertains that differences observed between imprinted and nonimprinted polymers are due only to graft imprinted surfaces and give therefore better results in NMR spectroscopy due to less unspecific interactions between analyte and monolith. This improves the comparability to chromatographic evaluations where uncrushed monolithic columns are also used. To track interactions between analyte and stationary phase, the saturation transfer difference (STD) technique was applied on the polymer in the suspended state using the same solvent as in the chromatographic evaluation. This relatively new NMR method has to our knowledge not been used on chromatographic materials before. By using STD NMR on pristine monoliths, it was possible to measure large differences between the imprinted or nonimprinted polymers and the analyte indicating significant differences in the interaction mechanisms. These could be directly correlated with retention differences observed in chromatographic evaluations. PMID:16408943

  16. Biomechanical three-dimensional finite element analysis of monolithic zirconia crown with different cement type

    PubMed Central

    2015-01-01

    PURPOSE The objective of this study was to evaluate the influence of various cement types on the stress distribution in monolithic zirconia crowns under maximum bite force using the finite element analysis. MATERIALS AND METHODS The models of the prepared #46 crown (deep chamfer margin) were scanned and solid models composed of the monolithic zirconia crown, cement layer, and prepared tooth were produced using the computer-aided design technology and were subsequently translated into 3-dimensional finite element models. Four models were prepared according to different cement types (zinc phosphate, polycarboxylate, glass ionomer, and resin). A load of 700 N was applied vertically on the crowns (8 loading points). Maximum principal stress was determined. RESULTS Zinc phosphate cement had a greater stress concentration in the cement layer, while polycarboxylate cement had a greater stress concentration on the distal surface of the monolithic zirconia crown and abutment tooth. Resin cement and glass ionomer cement showed similar patterns, but resin cement showed a lower stress distribution on the lingual and mesial surface of the cement layer. CONCLUSION The test results indicate that the use of different luting agents that have various elastic moduli has an impact on the stress distribution of the monolithic zirconia crowns, cement layers, and abutment tooth. Resin cement is recommended for the luting agent of the monolithic zirconia crowns. PMID:26816578

  17. Probing the Effects of Templating on the UV and Visible Light Photocatalytic Activity of Porous Nitrogen-Modified Titania Monoliths for Dye Removal.

    PubMed

    Nursam, Natalita M; Wang, Xingdong; Tan, Jeannie Z Y; Caruso, Rachel A

    2016-07-13

    Porous nitrogen-modified titania (N-titania) monoliths with tailored morphologies were prepared using phase separation and agarose gel templating techniques. The doping and templating process were simultaneously carried out in a one-pot step using alcohol amine-assisted sol-gel chemistry. The amount of polymer used in the monoliths that were prepared using phase separation was shown to affect both the physical and optical properties: higher poly(ethylene glycol) content increased the specific surface area, porosity, and visible light absorption of the final materials. For the agarose-templated monoliths, the infiltration conditions affected the monolith morphology. A porous monolith with high surface area and the least shrinkage was obtained when the N containing alkoxide precursor was infiltrated into the agarose scaffolds at 60 °C. The effect of the diverse porous morphologies on the photocatalytic activity of N-titania was studied for the decomposition of methylene blue (MB) under visible and UV light irradiation. The highest visible light activity was achieved by the agarose-templated N-titania monolith, in part due to higher N incorporation. This sample also showed better UV activity, partly because of the higher specific surface area (up to 112 m(2) g(-1)) compared to the phase separation-induced monoliths (up to 103 m(2) g(-1)). Overall, agarose-templated, porous N-titania monoliths provided better features for effectively removing the MB contaminant. PMID:27347742

  18. The effects of As overpressure and diffusion source on the diffusion of Mn in GaAs

    NASA Astrophysics Data System (ADS)

    Wu, C. H.; Hsieh, K. C.

    1992-12-01

    Data are presented to show the effect of As overpressure on the diffusion of Mn in GaAs using four different Mn sources. These sources include solid Mn thin film deposited directly on the GaAs substrate and Mn vapors from pure Mn, MnAs, and Mn3As solids. In the circumstance for which a solid Mn film is used as the diffusion source, a nonuniform doping distribution and poor surface morphology is obtained due to a reaction between the Mn film and the GaAs matrix. The degraded surface consists of a layer of polycrystalline cubic alloy having a lattice constant of nearly 8.4 Å and a composition close to MnGa2 with a small amount of As. Of the remaining diffusion sources (Mn, MnAs, and Mn3As), only MnAs consistently produces a uniform doping distribution and smooth surface morphology. For diffusions at 800 °C, a uniform surface hole carrier concentration as high as 1020/cm3 can be obtained using MnAs as the source. The As overpressure is found to drastically alter the Mn diffusion profile, and Mn, like Zn, may diffuse in GaAs interstitial-substitutionally. Vapor from both the Mn and Mn3As solids degrade the GaAs surface. Mn3As, however, uncharacteristically degrades the surface more rapidly although the details of such are not well understood. With the presence of a high As overpressure, however, both surfaces of the Mn and Mn3As sources are converted to (Mn,As) compounds, the compositions being close to MnAs. High enough As overpressures are shown to completely suppress the GaAs surface degradation which is evident when Mn3As alone is used as the diffusion source.

  19. Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

    SciTech Connect

    Morton, S A; Waddill, G D; Spangenberg, M; Seddon, E A; Neal, J; Shen, T; Tobin, J G

    2003-03-10

    Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.

  20. Review on recent and advanced applications of monoliths and related porous polymer gels in micro-fluidic devices.

    PubMed

    Vázquez, Mercedes; Paull, Brett

    2010-06-01

    This review critically summarises recent novel and advanced achievements in the application of monolithic materials and related porous polymer gels in micro-fluidic devices appearing within the literature over the period of the last 5 years (2005-2010). The range of monolithic materials has developed rapidly over the past decade, with a diverse and highly versatile class of materials now available, with each exhibiting distinct porosities, pore sizes, and a wide variety of surface functionalities. A major advantage of these materials is their ease of preparation in micro-fluidic channels by in situ polymerisation, leading to monolithic materials being increasingly utilised for a larger variety of purposes in micro-fluidic platforms. Applications of porous polymer monoliths, silica-based monoliths and related homogeneous porous polymer gels in the preparation of separation columns, ion-permeable membranes, preconcentrators, extractors, electrospray emitters, micro-valves, electrokinetic pumps, micro-reactors and micro-mixers in micro-fluidic devices are discussed herein. Procedures used in the preparation of monolithic materials in micro-channels, as well as some practical aspects of the micro-fluidic chip fabrication are addressed. Recent analytical/bioanalytical and catalytic applications of the final micro-fluidic devices incorporating monolithic materials are also reviewed. PMID:20493286

  1. New monolithic chromatographic supports for macromolecules immobilization: challenges and opportunities.

    PubMed

    Calleri, E; Ambrosini, S; Temporini, C; Massolini, G

    2012-10-01

    This mini-review reports on some recent advances in the field of immobilized protein employing both silica and polymer-based monoliths as supports, and their application in affinity chromatography and immobilized enzyme reactors (IMERs) developments. The major emphasis is put on some interesting challenges and opportunities related to the development of new monolithic affinity supports based on biofriendly sol-gel inorganic monoliths with entrapped proteins and on organic monolithic supports with improved hydrophilicity for IMERs development in proteomic studies. The ease of preparation of monoliths and the multitude of functionalization techniques, make monoliths interesting for an increasing number of biochemical and medical applications. PMID:22386208

  2. Monolithic stationary phases with incorporated fumed silica nanoparticles. Part II. Polymethacrylate-based monolithic column with "covalently" incorporated modified octadecyl fumed silica nanoparticles for reversed-phase chromatography.

    PubMed

    Aydoğan, Cemil; El Rassi, Ziad

    2016-05-01

    This study is concerned with the incorporation of surface modified fumed silica nanoparticles (FSNPs) into polymethacrylate based monolithic columns for use in reversed phase chromatography (RPC) of small solutes and proteins. First, FSNPs were modified with 3-(trimethoxysilyl)propylmethacrylate (TMSPM) to yield the "hybrid" methacryloyl fumed silica nanoparticle (MFSNP) monomer. The resulting MFSNP was then mixed with glyceryl monomethacrylate (GMM) and ethylene dimethacrylate (EDMA) in a binary porogenic solvent composed of cyclohexanol and dodecanol, and the in situ copolymerization of MFSNP, GMM and EDMA was performed in a stainless steel column of 4.6 mm i.d. The silanol groups of the hybrid monolith thus obtained were grafted with octadecyl ligands by perfusing the hybrid monolithic column with a solution of 4% w/v of dimethyloctadecylchlorosilane (DODCS) in toluene while the column was maintained at 110°C for 6h (in a heated HPLC oven). One of the originalities of this study was to demonstrate MFSNP as a novel derivatized "hybrid monomer" in making RPC monolithic columns with surface bound octadecyl ligands. In this respect, the RPC behavior of the monolithic column with "covalently" incorporated FNSPs having surface grafted octadecyl ligands was evaluated with alkylbenzenes, aniline derivatives and phenolic compounds. The results showed that the hybrid poly(GMA-EDMA-MFSNP) having surface bound octadecyl ligands exhibited hydrophobic interactions under reversed phase elution conditions. Furthermore, six standard proteins were baseline separated on the column using a 10min linear gradient elution at increasing ACN concentration in the mobile phase at a flow rate of 1.0mL/min using a 10 cm×4.6mm i.d. column. The relative standard deviations (RSDs) for the retention times of the tested solutes were lower than 2.1% and 2.4% under isocratic elution and gradient elution conditions, respectively. PMID:27059396

  3. Development of fibrous monoliths from mullite, alumina, and zirconia powders

    SciTech Connect

    Polzin, B. J.; Cruse, T. A.; Singh, D.; Picciolo, J. J.; Tsaliagos, R. N.; Phelan, P. J.; Goretta, K. C.

    2000-06-29

    Fibrous monoliths (FMs) based on mullite combined with Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3}-stabilized ZrO{sub 2} have been produced. These FMs incorporate duplex cells in which compressive residual stresses were engineered into the surfaces of the cells. The residual stresses should increase average cell strength, which may allow them to achieve mechanical properties comparable to those of Si{sub 3}N{sub 4}/BN FMs. The expected residual stresses have been calculated, and data on sintering and thermal expansion have been gathered. Prototype FMs were produced and their microstructure examined.

  4. Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces

    NASA Astrophysics Data System (ADS)

    Lourenço, S. A.; Teodoro, M. D.; González-Borrero, P. P.; Dias, I. F. L.; Duarte, J. L.; Marega, E.; Salamo, G. J.

    2012-06-01

    The competition between confinement potential fluctuations and band-gap renormalization (BGR) in GaAs/AlxGaAs quantum wells grown on [1 0 0] and [3 1 1]A GaAs substrates is evaluated. The results clearly demonstrate the coexistence of the band-tail states filling related to potential fluctuations and the band-gap renormalization caused by an increase in the density of photogenerated carriers during the photoluminescence (PL) experiments. Both phenomena have strong influence on temperature dependence of the PL-peak energy (EPL(T)). As the photon density increases, the EPL can shift to either higher or lower energies, depending on the sample temperature. The temperature at which the displacement changes from a blueshift to a redshift is governed by the magnitude of the potential fluctuations and by the variation of BGR with excitation density. A simple band-tail model with a Gaussian-like distribution of the density of state was used to describe the competition between the band-tail filling and the BGR effects on EPL(T).

  5. Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs

    NASA Astrophysics Data System (ADS)

    Sato, Kenji; Ikoma, Hideaki

    1993-02-01

    Internal photoemission and X-ray photoelectron spectroscopic (XPS) measurements were performed to investigate the effect of sulfur passivation on the GaAs surface and the degradation of the GaAs surface exposed to air ambient after the passivation. The reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect. However, it increased as this sample was exposed to air, indicating an increase in the interface state density. The XPS studies showed that both the Ga and As oxides were hardly observed in the sulfur-passivated samples. This indicates that sulfur passivation strongly suppresses oxidation of GaAs. However, a small amount of elemental arsenic was observed with a trace of the As suboxides (such as AsO) after exposure to air and it increased as the exposure time was increased. These results were probably correlated with the increase in the bias dependence of the Schottky barrier height in samples exposed to air after the passivation. Thermal oxidation of GaAs was found to be retarded by sulfur passivation until oxidation time was about 10 min at 300°C. A possible model of suppression of oxidation by sulfur passivation was also discussed.

  6. Fracture Strength of Aged Monolithic and Bilayer Zirconia-Based Crowns

    PubMed Central

    Lameira, Deborah Pacheco; Silva, Wilkens Aurélio Buarque e; Silva, Frederico Andrade e; De Souza, Grace M.

    2015-01-01

    The purpose of this study was to evaluate the effect of design and surface finishing on fracture strength of yttria-tetragonal zirconia polycrystal (Y-TZP) crowns in monolithic (1.5 mm thickness) and bilayer (0.8 mm zirconia coping and 0.7 mm porcelain veneer) configuration after artificial aging. Bovine incisors received crown preparation and Y-TZP crowns were manufactured using CAD/CAM technique, according to the following groups (n = 10): Polished monolithic zirconia crowns (PM); Glazed monolithic zirconia crowns (GM); Bi-layer crowns (BL). Crowns were cemented with resin cement, submitted to artificial aging in a chewing simulator (2.5 million cycles/80 N/artificial saliva/37°C), and tested for fracture strength. Two remaining crowns referring to PM and GM groups were submitted to a chemical composition analysis to measure the level of yttrium after aging. One-way ANOVA and Tukey's test (P = .05) indicated that monolithic zirconia crowns presented similar fracture strength (PM = 3476.2 N ± 791.7; GM = 3561.5 N ± 991.6), which was higher than bilayer crowns (2060.4 N ± 810.6). There was no difference in the yttrium content among the three surfaces evaluated in the monolithic crowns. Thus, monolithic zirconia crowns present higher fracture strength than bilayer veneered zirconia after artificial aging and surface finishing does not affect their fracture strength. PMID:26576423

  7. GaAs Solar Cell Radiation Handbook

    NASA Technical Reports Server (NTRS)

    Anspaugh, B. E.

    1996-01-01

    History of GaAs solar cell development is provided. Photovoltaic equations are described along with instrumentation techniques for measuring solar cells. Radiation effects in solar cells, electrical performance, and spacecraft flight data for solar cells are discussed. The space radiation environment and solar array degradation calculations are addressed.

  8. Conduction-type control of Ge films grown on (NH 4) 2S-treated GaAs by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Inada, M.; Fujishima, T.; Umezu, I.; Sugimura, A.; Yamada, S.

    2001-07-01

    We have performed epitaxial growth of Ge films on (NH 4) 2S-treated GaAs (0 0 1) substrates under various growth temperatures using molecular beam epitaxy. We confirmed that this sulfur passivation is quite effective for preventing the oxidation of GaAs surface. Thus, the Ge films were grown epitaxially on GaAs substrate without thermal cleaning. The electric properties of Ge films were investigated using Hall measurement and it was found that the conduction type of Ge films can be controlled by growth temperature. The Ga-S bond is thought to be the key for conduction type control, although the details are not identified yet.

  9. Energetics and Dynamics of GaAs Epitaxial Growth via Quantum Wave Packet Studies

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Saini, Subhash (Technical Monitor)

    1998-01-01

    The dynamics of As(sub 2) molecule incorporation into the flat Ga-terminated GaAs(100) surface is studied computationally. The time-dependent Schrodinger equation is solved on a two-dimensional potential energy surface obtained using density functional theory calculations. The probabilities of trapping and subsequent dissociation of the molecular As(sub 2) bond are calculated as a function of beam translational energy and vibrational quantum number of As(sub 2).

  10. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  11. Thermal stress cycling of GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Janousek, B. K.; Francis, R. W.; Wendt, J. P.

    1985-01-01

    A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

  12. Facile synthesis of gradient mesoporous carbon monolith based on polymerization-induced phase separation

    NASA Astrophysics Data System (ADS)

    Xu, Shunjian; Luo, Yufeng; Zhong, Wei; Xiao, Zonghu; Luo, Yongping; Ou, Hui; Zhao, Xing-Zhong

    2014-06-01

    In this paper, a gradient mesoporous carbon (GMC) monolith derived from the mixtures of phenolic resin (PF) and ethylene glycol (EG) was prepared by a facile route based on polymerization-induced phase separation under temperature gradient (TG). A graded biphasic structure of PF-rich and EG-rich phases was first formed in preform under a TG, and then the preform was pyrolyzed to obtain the GMC monolith. The TG is mainly induced by the thermal resistance of the preferential phase separation layer at high temperature region. The pore structure of the monolith changes gradually along the TG direction. When the TG varies from 58°C to 29°C, the pore size, apparent porosity and specific surface area of the monolith range respectively from 18 nm to 83 nm, from 32% to 39% and from 140.5 m2/g to 515.3 m2/g. The gradient porous structure of the monolith is inherited from that of the preform, which depends on phase separation under TG in the resin mixtures. The pyrolysis mainly brings about the contraction of the pore size and wall thickness as well as the transformation of polymerized PF into glassy carbon.

  13. A monolithic lipase reactor for biodiesel production by transesterification of triacylglycerides into fatty acid methyl esters

    PubMed Central

    Urban, Jiri; Svec, Frantisek; Fréchet, Jean M.J.

    2011-01-01

    An enzymatic reactor with lipase immobilized on a monolithic polymer support has been prepared and used to catalyze the transesterification of triacylglycerides into the fatty acid methyl esters commonly used for biodiesel. A design of experiments procedure was used to optimize the monolithic reactor with variables including control of the surface polarity of the monolith via variations in the length of the hydrocarbon chain in alkyl methacrylate monomer, time of grafting of 1-vinyl-4,4-dimethylazlactone used to activate the monolith, and time used for the immobilization of porcine lipase. Optimal conditions involved the use of a poly(stearyl methacrylate-co-ethylene dimethacrylate) monolith, grafted first with vinylazlactone, then treated with lipase for 2 h to carry out the immobilization of the enzyme. Best conditions for the transesterification of glyceryl tributyrate included a temperature of 37°C and a 10 min residence time of the substrate in the bioreactor. The reactor did not lose its activity even after pumping through it a solution of substrate equaling 1,000 reactor volumes. This enzymatic reactor was also used for the transesterification of triacylglycerides from soybean oil to fatty acid methyl esters thus demonstrating the ability of the reactor to produce biodiesel. PMID:21915852

  14. First acidic macro-mesocellular aluminosilicate monolithic foams "SiAl(HIPE)" and their catalytic properties.

    PubMed

    Debecker, Damien P; Boissière, Cédric; Laurent, Guillaume; Huet, Stéphanie; Eliaers, Philippe; Sanchez, Clément; Backov, Rénal

    2015-09-25

    A new type of acidic macrocellular and mesoporous silica-alumina foam is obtained via a one pot alkaline sol-gel route coupled with a concentrated emulsion-based templating technique. The mixed oxide monolith exhibits high surface acidity, translating into excellent performance in the acid-catalyzed dehydration of bioethanol to ethene. PMID:26266884

  15. Macroporous polyacrylamide-based monolithic column with immobilized pH gradient for protein analysis.

    PubMed

    Zhu, Guijie; Yuan, Huiming; Zhao, Peng; Zhang, Lihua; Liang, Zhen; Zhang, Weibing; Zhang, Yukui

    2006-09-01

    Monolithic materials were prepared in capillaries by in situ polymerization of acrylamide, glycidyl methacrylate, and N,N'-methylenebisacrylamide in the presence of 1,4-butanediol, dodecanol, and DMSO as porogens. With Ampholine attached to the surface of the porous monolith via epoxide groups, a monolithic-IPG (M-IPG) was formed and showed good mechanical and chemical stability. With such a column immobilized by Ampholine 3.5-10, IEF-MIX 3.6-9.3 was separated and good linearity was obtained. The CIEF behavior of M-IPG was evinced by comparing the current with that in the open tubular capillary. In addition, the protein mixtures excreted from lung cancer cells of rats were analyzed with such a new M-IPG column. PMID:16915568

  16. Miniaturized monolithic columns for the electrochromatographic separation and SERS detection of molecules of exobiological interest

    NASA Astrophysics Data System (ADS)

    Carbonnier, Benjamin; Guerrouache, Mohamed

    Development of miniaturized separation and detection media represents one of the major challenges in the field of modern analytical chemistry dedicated to space exploration. To date, gas chromatography-mass spectrometry has been selected as the method of choice for exobiology flight experiments for seeking for organic molecules and especially potential chemical indicators of life. [1] Liquid phase separation methods have also been developed with for instance, the so-called Mars Organic Analyzer (MOA) capillary electrophoresis (CE) microchip.[2] Although CE offers the advantages of easy miniaturization and high separation efficiency it suffers from a lack of selectivity towards a broad range of analytes with varied chemical nature. In this respect, we propose the use of capillary columns filled with monolithic stationary phases for the electrochromatographic separation of organic molecules of exobiology interest. Polymer monoliths have attracted a great deal of interest in analytical science over the last years as (electro)chromatographic stationary phases [3], immunosensors [4]. Beyond the intrinsic properties of monolithic polymers, i.e. fast mass transport between the monolithic support and the surrounding fluid and high permeability, other major advantages are their easy in situ preparation and tuning of surface functionality. Indeed, monoliths can be simply prepared through free radical copolymerization of a homogeneous mixture made of monomers, cross-linkers, porogenic solvents and initiator. UV-initiation process has been exploited to the synthesis of a discrete section of monolith as a flow-through active element within the confines of micro channels [5,6] while two-step strategies have been reported for the design of varied adsorbent starting with a generic monolith [7,8]. Although a nearly limitless range of monolithic supports can be prepared by this traditional method, the resulting monoliths exhibit unique function. In this contribution, we describe an

  17. Preparation and evaluation of rigid porous polyacrylamide-based strong cation-exchange monolithic columns for capillary electrochromatography.

    PubMed

    Dong, Jing; Ou, Junjie; Dong, Xiaoli; Wu, Renan; Ye, Mingliang; Zou, Hanfa

    2007-11-01

    A CEC monolithic column with strong cation-exchange (SCX) stationary phase based on hydrophilic monomers was prepared by in situ polymerization of acrylamide, methylenebisacrylamide, and 2-acrylamido-2-methyl-1-propanesulfonic acid (AMPS) in a complete organic binary porogenic solvent consisting of DMSO and dodecanol. The sulfonic groups provided by the monomer AMPS on the surface of the stationary phase generate an EOF from anode to cathode, and serve as an SCX stationary phase at the same time. The monolithic stationary phase exhibited normal-phase chromatographic behavior for neutral analytes. For charged analytes, electrostatic interaction/repulsion with the monolith was observed. The strong SCX monolithic column has been successfully employed in the electrochromatographic separation of basic drugs, peptides, and alkaloids extracted from natural products. PMID:17924588

  18. Review of recent advances in the preparation of organic polymer monoliths for liquid chromatography of large molecules.

    PubMed

    Arrua, R Dario; Talebi, Mohammad; Causon, Tim J; Hilder, Emily F

    2012-08-13

    In recent years the use of monolithic polymers in separation science has greatly increased due to the advantages these materials present over particle-based stationary phases, such as their relative ease of preparation and good permeability. For these reasons, these materials present high potential as stationary phases for the separation and purification of large molecules such as proteins, peptides, nucleic acids and cells. An example of this is the wide range of commercial available polymer-based monolithic columns now present in the market. This review summarizes recent developments in the synthesis of monolithic polymers for separation science, such as the incorporation of nanostructures in the polymeric scaffold as well as the preparation of hybrid structures. The different methods used in the surface functionalization of monolithic columns are also reviewed. Finally, we critically discuss the recent applications of this column technology in the separation of large molecules under different chromatographic mode. PMID:22790694

  19. Taking a Large Monolith to Use for Teaching Soil Morphology.

    ERIC Educational Resources Information Center

    Smith, B. R.; And Others

    1989-01-01

    Described is a technique for taking a large monolith for the purpose of teaching soil structure. Materials and procedures are detailed. A survey of 93 students indicated that the larger monolith was preferred over the commonly used narrow ones. (CW)

  20. Monolithic microwave integrated circuits for sensors, radar, and communications systems; Proceedings of the Meeting, Orlando, FL, Apr. 2-4, 1991

    NASA Technical Reports Server (NTRS)

    Leonard, Regis F. (Editor); Bhasin, Kul B. (Editor)

    1991-01-01

    Consideration is given to MMICs for airborne phased arrays, monolithic GaAs integrated circuit millimeter wave imaging sensors, accurate design of multiport low-noise MMICs up to 20 GHz, an ultralinear low-noise amplifier technology for space communications, variable-gain MMIC module for space applications, a high-efficiency dual-band power amplifier for radar applications, a high-density circuit approach for low-cost MMIC circuits, coplanar SIMMWIC circuits, recent advances in monolithic phased arrays, and system-level integrated circuit development for phased-array antenna applications. Consideration is also given to performance enhancement in future communications satellites with MMIC technology insertion, application of Ka-band MMIC technology for an Orbiter/ACTS communications experiment, a space-based millimeter wave debris tracking radar, low-noise high-yield octave-band feedback amplifiers to 20 GHz, quasi-optical MESFET VCOs, and a high-dynamic-range mixer using novel balun structure.

  1. Development of a monolithic ferrite memory array

    NASA Technical Reports Server (NTRS)

    Heckler, C. H., Jr.; Bhiwandker, N. C.

    1972-01-01

    The results of the development and testing of ferrite monolithic memory arrays are presented. This development required the synthesis of ferrite materials having special magnetic and physical characteristics and the development of special processes; (1) for making flexible sheets (laminae) of the ferrite composition, (2) for embedding conductors in ferrite, and (3) bonding ferrite laminae together to form a monolithic structure. Major problems encountered in each of these areas and their solutions are discussed. Twenty-two full-size arrays were fabricated and fired during the development of these processes. The majority of these arrays were tested for their memory characteristics as well as for their physical characteristics and the results are presented. The arrays produced during this program meet the essential goals and demonstrate the feasibility of fabricating monolithic ferrite memory arrays by the processes developed.

  2. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J. )

    1993-05-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  3. Monolithic and mechanical multijunction space solar cells

    SciTech Connect

    Jain, R.K.; Flood, D.J.

    1992-08-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  4. A 30 GHz monolithic receive module

    NASA Technical Reports Server (NTRS)

    Mondal, J.; Contolatis, T.; Geddes, J.; Bauhahn, P.; Sokolov, V.

    1990-01-01

    The technical achievements and deliveries made during the duration of the program to develop a 30 GHz monolithic receive module for communication feed array applications and to deliver submodules and 30 GHz monolithic receive modules for experimental evaluation are discussed. Key requirements include an overall receive module noise figure of 5 dB, a 30 dB RF-to-RF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. In addition, the monolithic receive module design addresses a cost goal of less than one thousand dollars (1980 dollars) per module in unit buys of 5,000 or more, and a mechanical configuration that is applicable to a spaceborne phase array system. An additional task for the development and delivery of 32 GHz phase shifter integrated circuit (IC) for deep space communication is also described.

  5. Monolithic and mechanical multijunction space solar cells

    NASA Technical Reports Server (NTRS)

    Jain, Raj K.; Flood, Dennis J.

    1992-01-01

    High-efficiency, lightweight, radiation-resistant solar cells are essential to meet the large power requirements of future space missions. Single-junction cells are limited in efficiency. Higher cell efficiencies could be realized by developing multijunction, multibandgap solar cells. Monolithic and mechanically stacked tandem solar cells surpassing single-junction cell efficiencies have been fabricated. This article surveys the current status of monolithic and mechanically stacked multibandgap space solar cells, and outlines problems yet to be resolved. The monolithic and mechanically stacked cells each have their own problems related to size, processing, current and voltage matching, weight, and other factors. More information is needed on the effect of temperature and radiation on the cell performance. Proper reference cells and full-spectrum range simulators are also needed to measure efficiencies correctly. Cost issues are not addressed, since the two approaches are still in the developmental stage.

  6. Designing Catalytic Monoliths For Closed-Cycle CO2 Lasers

    NASA Technical Reports Server (NTRS)

    Guinn, Keith; Herz, Richard K.; Goldblum, Seth; Noskowski, ED

    1992-01-01

    LASCAT (Design of Catalytic Monoliths for Closed-Cycle Carbon Dioxide Lasers) computer program aids in design of catalyst in monolith by simulating effects of design decisions on performance of laser. Provides opportunity for designer to explore tradeoffs among activity and dimensions of catalyst, dimensions of monolith, pressure drop caused by flow of gas through monolith, conversion of oxygen, and other variables. Written in FORTRAN 77.

  7. Consolidation and densification methods for fibrous monolith processing

    DOEpatents

    Sutaria, Manish P.; Rigali, Mark J.; Cipriani, Ronald A.; Artz, Gregory J.; Mulligan, Anthony C.

    2006-06-20

    Methods for consolidation and densification of fibrous monolith composite structures are provided. Consolidation and densification of two- and three-dimensional fibrous monolith components having complex geometries can be achieved by pressureless sintering. The fibrous monolith composites are formed from filaments having at least a first material composition generally surrounded by a second material composition. The composites are sintered at a pressure of no more than about 30 psi to provide consolidated and densified fibrous monolith composites.

  8. Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

    SciTech Connect

    Oh, Hoon Jung; Choi, Kyu Jin; Loh, Wei Yip; Htoo, Thwin; Chua, Soo Jin; Cho, Byung Jin

    2007-09-01

    A GaAs defect-free epitaxial layer has been grown on Si via a Ge concentration graded SiGe on insulator (SGOI) for application in high channel-mobility metal-oxide-semiconductor field effect transistor. The SGOI layer, 42 nm thick, serves as the compliant and intermediate buffer to reduce the lattice and thermal expansion mismatches between Si and GaAs. A modified two-step Ge condensation technique achieves the surface Ge concentration in SGOI as high as 71%. It is also found that low-temperature migration enhanced epitaxy during the initial GaAs nucleation on the SGOI surface is critical to obtain a device quality GaAs layer by epitaxial growth.

  9. Acoustic Wave Chemical Microsensors in GaAs

    SciTech Connect

    Albert G. Baca; Edwin J. Heller; Gregory C. Frye-Mason; John L. Reno; Richard Kottenstette; Stephen A. Casalnuovo; Susan L. Hietala; Vincent M. Hietala

    1998-09-20

    High sensitivity acoustic wave chemical microsensors are being developed on GaAs substrates. These devices take advantage of the piezoelectric properties of GaAs as well as its mature microelectronics fabrication technology and nascent micromachining technology. The design, fabrication, and response of GaAs SAW chemical microsensors are reported. Functional integrated GaAs SAW oscillators, suitable for chemical sensing, have been produced. The integrated oscillator requires 20 mA at 3 VK, operates at frequencies up to 500 MHz, and occupies approximately 2 mmz. Discrete GaAs sensor components, including IC amplifiers, SAW delay lines, and IC phase comparators have been fabricated and tested. A temperature compensation scheme has been developed that overcomes the large temperature dependence of GaAs acoustic wave devices. Packaging issues related to bonding miniature flow channels directly to the GaAs substrates have been resolved. Micromachining techniques for fabricating FPW and TSM microsensors on thin GaAs membranes are presented and GaAs FPW delay line performance is described. These devices have potentially higher sensitivity than existing GaAs and quartz SAW sensors.

  10. Comparative research on indium seal process for transmission-mode GaAs photocathodes

    NASA Astrophysics Data System (ADS)

    Chen, Liang; Zhang, Shuqin; Jin, Shangzhong; Xu, Sunan; Jiao, Gangcheng

    2013-01-01

    For night vision devices and other applications, the transmission-mode photocathodes must be sealed to tube by indium seal process (ISP) in practical application. But in early research, the integral sensitivity has large drop to about 30% amplitude after ISP process than after activation process. In order to well study the influence of ISP on surface barriers of activated GaAs photocathodes, we used the comparative research method by surface photovoltage spectroscopy (SPS) and spectral response current (SRC). Through fitting calculation, we can find that the impurity gas sources by micro channel plate and fluorescent screen have deep influence on the amplitude and width of surface barriers which lead to the large drop on SRC curves before and after ISP process. This on-line comparative research method can help to optimize ISP technique and vacuum degree optimization for transmission-mode GaAs photocathodes in the future.

  11. Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

    PubMed Central

    2011-01-01

    MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature Tt, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated Tt of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions. PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe PMID:21711651

  12. Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

    NASA Astrophysics Data System (ADS)

    Lee, Kangho; Lu, Gang; Facchetti, Antonio; Janes, David B.; Marks, Tobin J.

    2008-03-01

    Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

  13. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

    NASA Astrophysics Data System (ADS)

    Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, T. J.

    2006-10-01

    High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10-5A/cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA/mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS/mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

  14. Monolithic and integrated phased array antennas

    NASA Astrophysics Data System (ADS)

    Schaubert, Daniel H.; Pozar, David M.

    Some of the problems relevant to the design of monolithic and integrated arrays are examined. In particular, attention is given to electrical and mechanical design considerations, restrictions they impose on the choice of elements and architecture of integrated arrays, and elements that can alleviate one or more of these restrictions. Monolithic array designs are compared with some multiple-layer and two-sided designs using such criteria as scan range, bandwidth, substrate size and configuration, polarization, and feed line radiation. Broadside radiating elements, such as microstrip dipoles and patches, as well as end-fire radiating slots are considered.

  15. UPDATE ON MONOLITHIC FUEL FABRICATION METHODS

    SciTech Connect

    C. R. Clark; J. F. Jue; G. A. Moore; N. P. Hallinan; B. H. Park; D. E. Burkes

    2006-10-01

    Efforts to develop a viable monolithic research reactor fuel plate have continued at Idaho National Laboratory. These efforts have concentrated on both fabrication process refinement and scale-up to produce full sized fuel plates. Progress at INL has led to fabrication of hot isostatic pressed uranium-molybdenum bearing monolithic fuel plates. These miniplates are part of the RERTR-8 miniplate irradiation test. Further progress has also been made on friction stir weld processing which has been used to fabricate full size fuel plates which will be irradiated in the ATR and OSIRIS reactors.

  16. Increased thermal conductivity monolithic zeolite structures

    DOEpatents

    Klett, James; Klett, Lynn; Kaufman, Jonathan

    2008-11-25

    A monolith comprises a zeolite, a thermally conductive carbon, and a binder. The zeolite is included in the form of beads, pellets, powders and mixtures thereof. The thermally conductive carbon can be carbon nano-fibers, diamond or graphite which provide thermal conductivities in excess of about 100 W/mK to more than 1,000 W/mK. A method of preparing a zeolite monolith includes the steps of mixing a zeolite dispersion in an aqueous colloidal silica binder with a dispersion of carbon nano-fibers in water followed by dehydration and curing of the binder is given.

  17. ZnSe Window Layers for GaAs and GaInP2 Solar Cells

    NASA Technical Reports Server (NTRS)

    Olsen, Larry C.

    1997-01-01

    This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

  18. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    SciTech Connect

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500 deg. C for 300 s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  19. Supercapacitor Electrodes from Activated Carbon Monoliths and Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Dolah, B. N. M.; Othman, M. A. R.; Deraman, M.; Basri, N. H.; Farma, R.; Talib, I. A.; Ishak, M. M.

    2013-04-01

    Binderless monoliths of supercapacitor electrodes were prepared by the carbonization (N2) and activation (CO2) of green monoliths (GMs). GMs were made from mixtures of self-adhesive carbon grains (SACG) of fibers from oil palm empty fruit bunches and a combination of 5 & 6% KOH and 0, 5 & 6% carbon nanotubes (CNTs) by weight. The electrodes from GMs containing CNTs were found to have lower specific BET surface area (SBET). The electrochemical behavior of the supercapacitor fabricated using the prepared electrodes were investigated by electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge (GCD). In general an addition of CNTs into the GMs reduces the equivalent series resistance (ESR) value of the cells. A cell fabricated using electrodes from GM with 5% CNT and 5% KOH was found to have the largest reduction of ESR value than that from the others GMs containing CNT. The cell has steeper Warburg's slope than that from its respective non-CNT GM, which reflect the smaller resistance for electrolyte ions to move into pores of electrodes despite these electrodes having largest reduction in specific BET surface area. The cell also has the smallest reduction of specific capacitance (Csp) and maintains the specific power range despite a reduction in the specific energy range due to the CNT addition.

  20. Growth of single-crystal Al layers on GaAs and Si substrates for microwave superconducting resonators

    NASA Astrophysics Data System (ADS)

    Tournet, J.; Gosselink, D.; Jaikissoon, M.; Miao, G.-X.; Langenberg, D.; Mariantoni, M.; Wasilewski, Zr

    Thin Al layers on dielectrics are essential building blocks of circuits used in the quest for scalable quantum computing systems. While molecular beam epitaxy (MBE) has been shown to produce the highest quality Al layers, further reduction of losses in superconducting resonators fabricated from them is highly desirable. Defects at the Al-substrate interface are likely the key source of losses. Here we report on the optimization of MBE growth of Al layers on GaAs and Si substrates. Si surfaces were prepared by in-situ high temperature substrate annealing. For GaAs, defects typically remaining on the substrate surfaces after oxide desorption were overgrown with GaAs or GaAs/AlAs superlattice buffer layers. Such surface preparation steps were followed by cooling process to below 0°C, precisely controlled to obtain targeted surface reconstructions. Deposition of 110 nm Al layers was done at subzero temperatures and monitored with RHEED at several azimuths simultaneously. The resulting layers were characterized by HRXRD, AFM and Nomarski. Single crystal, near-atomically smooth layers of Al(110) were demonstrated on GaAs(001)-2x4 surface whereas Al(111) of comparable quality was formed on Si(111)-1x1 and 7x7 surfaces.